Effect of 30 MeV Li3+ ion and 8 MeV electron irradiation on N-channel MOSFETs

NASA Astrophysics Data System (ADS)

Prakash, A. P. G.; Ganesh, K. C. P.; Nagesha, Y. N.; Umakanth, D.; Arora, S. K.; Siddappa, K.

The effect of 30 MeV Li3+ ion and 8 MeV electron irradiation on the threshold voltage (V-TH), the voltage shift due to interface trapped charge (DeltaV(Nit)), the voltage shift due to oxide trapped charge (DeltaV(Not)), the density of interface trapped charge (DeltaN(it)), the density of oxide trapped charge (DeltaN(ot) ) and the drain saturation current (I-D Sat) were studied as a function of fluence. Considerable increase in DeltaN(it) and DeltaN(ot) , and decrease in V-TH and I-D Sat were observed in both types of irradiation. The observed difference in the properties of Li3+ ion and electron irradiated MOSFETs are interpreted on the basis of energy loss process associated with the type of radiation. The study showed that the 30 MeV Li3+ ion irradiation produce more damage when compared to the 8 MeV electron irradiation because of the higher electronic energy loss value. High temperature annealing studies showed that trapped charge generated during ion and electron irradiation was annealed out at 500 degreesC.

Relativistic electrons and whistlers in Jupiter's magnetosphere

NASA Technical Reports Server (NTRS)

Barbosa, D. D.; Coroniti, F. V.

1976-01-01

The paper examines some of the consequences of relativistic electrons in stably trapped equilibrium with parallel propagating whistlers in the inner magnetosphere of Jupiter. Approximate scaling laws for the stably trapped electron flux and equilibrium wave intensity are derived, and the equatorial growth rate for whistlers is determined. It is shown that fluxes are near the stably trapped limit, which suggests that whistler intensities may be high enough to cause significant diffusion of electrons, accounting for the observed reduction of phase space densities.

Annealing shallow Si/SiO2 interface traps in electron-beam irradiated high-mobility metal-oxide-silicon transistors

NASA Astrophysics Data System (ADS)

Kim, J.-S.; Tyryshkin, A. M.; Lyon, S. A.

2017-03-01

Electron-beam (e-beam) lithography is commonly used in fabricating metal-oxide-silicon (MOS) quantum devices but creates defects at the Si/SiO2 interface. Here, we show that a forming gas anneal is effective at removing shallow defects (≤4 meV below the conduction band edge) created by an e-beam exposure by measuring the density of shallow electron traps in two sets of high-mobility MOS field-effect transistors. One set was irradiated with an electron-beam (10 keV, 40 μC/cm2) and was subsequently annealed in forming gas while the other set remained unexposed. Low temperature (335 mK) transport measurements indicate that the forming gas anneal recovers the e-beam exposed sample's peak mobility (14 000 cm2/Vs) to within a factor of two of the unexposed sample's mobility (23 000 cm2/Vs). Using electron spin resonance (ESR) to measure the density of shallow traps, we find that the two sets of devices are nearly identical, indicating the forming gas anneal is sufficient to anneal out shallow defects generated by the e-beam exposure. Fitting the two sets of devices' transport data to a percolation transition model, we extract a T = 0 percolation threshold density in quantitative agreement with our lowest temperature ESR-measured trap densities.

Resilience of quasi-isodynamic stellarators against trapped-particle instabilities.

PubMed

Proll, J H E; Helander, P; Connor, J W; Plunk, G G

2012-06-15

It is shown that in perfectly quasi-isodynamic stellarators, trapped particles with a bounce frequency much higher than the frequency of the instability are stabilizing in the electrostatic and collisionless limit. The collisionless trapped-particle instability is therefore stable as well as the ordinary electron-density-gradient-driven trapped-electron mode. This result follows from the energy balance of electrostatic instabilities and is thus independent of all other details of the magnetic geometry.

Modified stimulated Raman scattering of a laser induced by trapped electrons in a plasma

NASA Astrophysics Data System (ADS)

Baliyan, Sweta; Rafat, Mohd.; Ahmad, Nafis; Sajal, Vivek

2017-10-01

The plasma wave, generated in stimulated Raman scattering process by an intense laser in the plasmas, traps a significant number of electrons in its potential energy minima. These electrons travel with the phase velocity of plasma wave and oscillate with bounce frequency. When the bounce frequency of electrons becomes equal to the growth rate of Raman process, resonance takes place. Now, Raman scattering gets modified by parametrically exciting a trapped electron mode and an electromagnetic sideband. The ponderomotive force due to the pump and sideband drives the plasma wave, whereas the density perturbation due to the trapped electron mode couples with the oscillating velocity of electrons due to the laser to produce a nonlinear current, driving the sideband.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Marrakchi, G.; Barbier, D.; Guillot, G.

Electrical and deep level transient spectroscopy measurements on Schottky barriers were performed in order to characterize electrically active defects in n-type GaAs (Bridgman substrates or liquid-phase epitaxial layers) after pulsed electron beam annealing. Both surface damage and bulk defects were observed in the Bridgman substrates depending on the pulse energy density. No electron traps were detected in the liquid-phase epitaxial layers before and after annealing for an energy density of 0.4 J/cm/sup 2/. The existence of an interfacial insulating layer at the metal-semiconductor interface, associated with As out-diffusion during the pulsed electron irradiation, was revealed by the abnormally high valuesmore » of the Schottky barrier diffusion potential. Moreover, two new electron traps with activation energy of 0.35 and 0.43 eV, called EP1 and EP2, were introduced in the Bridgman substrates after pulsed electron beam annealing. The presence of these traps, related to the As evaporation, was tentatively attributed to the decrease of the EL2 electron trap signal after 0.4-J/cm/sup 2/ annealing. It is proposed that these new defects states are due to the decomposition of the As/sub Ga/-As/sub i/ complex recently considered as the most probable defect configuration for the dominant EL2 electron trap usually detected in as-grown GaAs substrates.« less

Generation of forerunner electron beam during interaction of ion beam pulse with plasma

DOE PAGES

Hara, Kentaro; Kaganovich, Igor D.; Startsev, Edward A.

2018-01-01

The long-time evolution of the two-stream instability of a cold tenuous ion beam pulse propagating through the background plasma with density much higher than the ion beam density is investigated using a large-scale one-dimensional electrostatic kinetic simulation. The three stages of the instability are investigated in detail. After the initial linear growth and saturation by the electron trapping, a portion of the initially trapped electrons becomes detrapped and moves ahead of the ion beam pulse forming a forerunner electron beam, which causes a secondary two-stream instability that preheats the upstream plasma electrons. Consequently, the self-consistent nonlinear-driven turbulent state is setmore » up at the head of the ion beam pulse with the saturated plasma wave sustained by the influx of the cold electrons from upstream of the beam that lasts until the final stage when the beam ions become trapped by the plasma wave. Finally, the beam ion trapping leads to the nonlinear heating of the beam ions that eventually extinguishes the instability.« less

Generation of forerunner electron beam during interaction of ion beam pulse with plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hara, Kentaro; Kaganovich, Igor D.; Startsev, Edward A.

The long-time evolution of the two-stream instability of a cold tenuous ion beam pulse propagating through the background plasma with density much higher than the ion beam density is investigated using a large-scale one-dimensional electrostatic kinetic simulation. The three stages of the instability are investigated in detail. After the initial linear growth and saturation by the electron trapping, a portion of the initially trapped electrons becomes detrapped and moves ahead of the ion beam pulse forming a forerunner electron beam, which causes a secondary two-stream instability that preheats the upstream plasma electrons. Consequently, the self-consistent nonlinear-driven turbulent state is setmore » up at the head of the ion beam pulse with the saturated plasma wave sustained by the influx of the cold electrons from upstream of the beam that lasts until the final stage when the beam ions become trapped by the plasma wave. Finally, the beam ion trapping leads to the nonlinear heating of the beam ions that eventually extinguishes the instability.« less

Determination of the ReA Electron Beam Ion Trap electron beam radius and current density with an X-ray pinhole camera

NASA Astrophysics Data System (ADS)

Baumann, Thomas M.; Lapierre, Alain; Kittimanapun, Kritsada; Schwarz, Stefan; Leitner, Daniela; Bollen, Georg

2014-07-01

The Electron Beam Ion Trap (EBIT) of the National Superconducting Cyclotron Laboratory at Michigan State University is used as a charge booster and injector for the currently commissioned rare isotope re-accelerator facility ReA. This EBIT charge breeder is equipped with a unique superconducting magnet configuration, a combination of a solenoid and a pair of Helmholtz coils, allowing for a direct observation of the ion cloud while maintaining the advantages of a long ion trapping region. The current density of its electron beam is a key factor for efficient capture and fast charge breeding of continuously injected, short-lived isotope beams. It depends on the radius of the magnetically compressed electron beam. This radius is measured by imaging the highly charged ion cloud trapped within the electron beam with a pinhole camera, which is sensitive to X-rays emitted by the ions with photon energies between 2 keV and 10 keV. The 80%-radius of a cylindrical 800 mA electron beam with an energy of 15 keV is determined to be r_{80%}=(212± 19)μm in a 4 T magnetic field. From this, a current density of j = (454 ± 83)A/cm2 is derived. These results are in good agreement with electron beam trajectory simulations performed with TriComp and serve as a test for future electron gun design developments.

Electron and hole transport in the organic small molecule α-NPD

NASA Astrophysics Data System (ADS)

Rohloff, R.; Kotadiya, N. B.; Crǎciun, N. I.; Blom, P. W. M.; Wetzelaer, G. A. H.

2017-02-01

Electron and hole transport properties of the organic small molecule N,N'-Di(1-naphthyl)-N,N'-diphenyl-(1,1'-biphenyl)-4,4'-diamine are investigated by space-charge-limited current measurements. The hole transport shows trap-free behavior with a mobility of 2.3 × 10-8 m2/Vs at vanishing carrier density and electric field. The electron transport, on the other hand, shows heavily trap-limited behavior, which leads to highly unbalanced transport. A trap concentration of 1.3 × 1024 m-3 was found by modeling the electron currents, similar to the universal trap concentration found in conjugated polymers. This indicates that electron trapping is a generic property of organic semiconductors, ranging from vacuum-deposited small-molecules to solution-processed conjugated polymers.

Electrochemical control over photoinduced electron transfer and trapping in CdSe-CdTe quantum-dot solids.

PubMed

Boehme, Simon C; Walvis, T Ardaan; Infante, Ivan; Grozema, Ferdinand C; Vanmaekelbergh, Daniël; Siebbeles, Laurens D A; Houtepen, Arjan J

2014-07-22

Understanding and controlling charge transfer between different kinds of colloidal quantum dots (QDs) is important for devices such as light-emitting diodes and solar cells and for thermoelectric applications. Here we study photoinduced electron transfer between CdTe and CdSe QDs in a QD film. We find that very efficient electron trapping in CdTe QDs obstructs electron transfer to CdSe QDs under most conditions. Only the use of thiol ligands results in somewhat slower electron trapping; in this case the competition between trapping and electron transfer results in a small fraction of electrons being transferred to CdSe. However, we demonstrate that electron trapping can be controlled and even avoided altogether by using the unique combination of electrochemistry and transient absorption spectroscopy. When the Fermi level is raised electrochemically, traps are filled with electrons and electron transfer from CdTe to CdSe QDs occurs with unity efficiency. These results show the great importance of knowing and controlling the Fermi level in QD films and open up the possibility of studying the density of trap states in QD films as well as the systematic investigation of the intrinsic electron transfer rates in donor-acceptor films.

Hydrogen treatment as a detergent of electronic trap states in lead chalcogenide nanoparticles

DOE PAGES

Vörös, Márton; Brawand, Nicholas P.; Galli, Giulia

2016-11-15

Lead chalcogenide (PbX) nanoparticles are promising materials for solar energy conversion. However, the presence of trap states in their electronic gap limits their usability, and developing a universal strategy to remove trap states is a persistent challenge. Using calculations based on density functional theory, we show that hydrogen acts as an amphoteric impurity on PbX nanoparticle surfaces; hydrogen atoms may passivate defects arising from ligand imbalance or off-stoichiometric surface terminations irrespective of whether they originate from cation or anion excess. In addition, we show, using constrained density functional theory calculations, that hydrogen treatment of defective nanoparticles is also beneficial formore » charge transport in films. We also find that hydrogen adsorption on stoichiometric nanoparticles leads to electronic doping, preferentially n-type. Lastly, our findings suggest that postsynthesis hydrogen treatment of lead chalcogenide nanoparticle films is a viable approach to reduce electronic trap states or to dope well-passivated films.« less

Optical characterization of wide-gap detector-grade semiconductors

NASA Astrophysics Data System (ADS)

Elshazly, Ezzat S.

Wide bandgap semiconductors are being widely investigated because they have the potential to satisfy the stringent material requirements of high resolution, room temperature gamma-ray spectrometers. In particular, Cadmium Zinc Telluride (Cd1-xZnxTe, x˜0.1) and Thallium Bromide (TlBr), due to their combination of high resistivity, high atomic number and good electron mobility, have became very promising candidates for use in X- and gamma-ray detectors operating at room temperature. In this study, carrier trapping times were measured in CZT and TlBr as a function of temperature and material quality. Carrier lifetimes and tellurium inclusion densities were measured in detector-grade Cadmium Zinc Telluride (CZT) crystals grown by the High Pressure Bridgman method and Modified Bridgman method. Excess carriers were produced in the material using a pulsed YAG laser with a 1064nm wavelength and 7ns pulse width. Infrared microscopy was used to measure the tellurium defect densities in CZT crystals. The electronic decay was optically measured at room temperature. Spatial mapping of lifetimes and defect densities in CZT was performed to determine the relationship between defect density and electronic decay. A significant and strong correlation was found between the volume fraction of tellurium inclusions and the carrier trapping time. Carrier trapping times and tellurium inclusions were measured in CZT in the temperature range from 300K to 110K and the results were analyzed using a theoretical trapping model. Spatial mapping of carrier trapping times and defect densities in CZT was performed to determine the relationship between defect density and electronic decay. While a strong correlation between trapping time and defect density of tellurium inclusions was observed, there was no significant change in the trap energy. Carrier trapping times were measured in detector grade thallium bromide (TlBr) and compared with the results for cadmium zinc telluride (CZT) in a temperature range from 300K to 110K. The experimental data was analyzed using a trapping model. In CZT, because the majority carrier concentration is close to the intrinsic carrier concentration, the trapping time increases exponentially as the temperature decreases below about 160K. While, in TlBr, the majority carrier concentration is many orders of magnitude greater than the intrinsic carrier concentration and the trapping time followed a 1T temperature dependence over the range of temperatures studied. The results of the model suggest that a moderately deep compensation center, located approximately 200 meV from the middle of the bandgap, could be used to significantly increase the room temperature trapping time in TlBr. The results of this model demonstrate that the room temperature trapping time in TlBr can, in principle, approach 0.1ms through the introduction of a moderately deep compensation level but without decreasing the overall trap concentration. This strategy is not possible in CZT, because the band gap is too small to use a moderately deep compensation level while still maintaining high material resistivity. Carrier trapping times were measured in three polycrystalline TlBr samples produced by melting commercial TlBr beads in a sealed quartz ampoule for two hours at three different temperatures near the melting point. The trapping time decreased with increasing melting temperature, presumably due to the thermal generation of a trap state.

Phenomenological theory of laser-plasma interaction in ``bubble'' regime

NASA Astrophysics Data System (ADS)

Kostyukov, I.; Pukhov, A.; Kiselev, S.

2004-11-01

The electron trapping in the "bubble" regime of laser-plasma interaction as proposed by Pukhov and Meyer-ter-Vehn [A. Pukhov and J. Meyer-ter-Vehn, Appl. Phys. B 74, 355 (2002)] is studied. In this regime the laser pulse generates a solitary plasma electron cavity: the bubble. It is free from the cold plasma electrons and runs with nearly light velocity. The present work discusses the form of the bubble and the spatial distribution of electromagnetic fields within the cavity. We extend the one-dimensional electron capture theory to the three-dimensional case. It is shown that the bubble can trap plasma electrons. The trapping condition is derived and the trapping cross section is estimated. Electron motion in the self-generated electron bunch is investigated. Estimates for the maximum of electron bunch energy and the bunch density are provided.

Predicting Stored Grain Insect Population Densities Using an Electronic Probe Trap

USDA-ARS?s Scientific Manuscript database

Manual sampling of insects in stored grain is a laborious and time consuming process. Automation of grain sampling should help to increase the adoption of stored-grain integrated pest management. A new commercial electronic grain probe trap (OPI Insector™) has recently been marketed. We field tested...

Analytic model of electron self-injection in a plasma wakefield accelerator in the strongly nonlinear bubble regime

NASA Astrophysics Data System (ADS)

Yi, Sunghwan; Khudik, Vladimir; Shvets, Gennady

2012-10-01

We study self-injection into a plasma wakefield accelerator in the blowout (or bubble) regime, where the bubble evolves due to background density inhomogeneities. To explore trapping, we generalize an analytic model for the wakefields inside the bubble [1] to derive expressions for the fields outside. With this extended model, we show that a return current in the bubble sheath layer plays an important role in determining the trapped electron trajectories. We explore an injection mechanism where bubble growth due to a background density downramp causes reduction of the electron Hamiltonian in the co-moving frame, trapping the particle in the dynamically deepening potential well [2]. Model calculations agree quantitatively with PIC simulations on the bubble expansion rate required for trapping, as well as the range of impact parameters for which electrons are trapped. This is an improvement over our previous work [3] using a simplified spherical bubble model, which ignored the fields outside of the bubble and hence overestimated the expansion rate required for trapping. [4pt] [1] W. Lu et al., Phys. Plasmas 13, 056709 (2006).[0pt] [2] S. Kalmykov et al., Phys. Rev. Lett 103, 135004 (2009).[0pt] [3] S.A. Yi et al., Plasma Phys. Contr. Fus. 53, 014012 (2011).

On the surface trapping parameters of polytetrafluoroethylene block

NASA Astrophysics Data System (ADS)

Zhang, Guan-Jun; Yang, Kai; Zhao, Wen-Bin; Yan, Zhang

2006-12-01

Surface flashover phenomena under high electric field are closely related to the surface characteristics of a solid insulating material between energized electrodes. Based on measuring the surface potential decaying curve of polytetrafluoroethylene (PTFE) block charged by a needle-plane corona discharge, its surface trapping parameters are calculated with the isothermal current theory, and the correlative curve between the surface trap density and its energy level is obtained. The maximum density of electron traps and hole traps in the surface layer of PTFE presents a similar value of ∼2.7 × 1017 eV-1 m-3, and the energy level of its electron and hole traps is of about 0.85-1.0 eV and 0.80-0.90 eV, respectively. Via the X-ray photoelectron spectroscopy (XPS) technique, the F, C, K and O elements are detected on the surface of PTFE samples, and F shows a remarkable atom proportion of ∼73.3%, quite different from the intrinsic distribution corresponding to its chemical formula. The electron traps are attributed to quantities of F atoms existing on the surface of PTFE due to its molecular chain with C atoms surrounded by F atoms spirally. It is considered that the distortions of chemical and electronic structure on solid surface are responsible for the flashover phenomena occurring at a low applied voltage.

Electron Cloud Trapping in Recycler Combined Function Dipole Magnets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Antipov, Sergey A.; Nagaitsev, S.

2016-10-04

Electron cloud can lead to a fast instability in intense proton and positron beams in circular accelerators. In the Fermilab Recycler the electron cloud is confined within its combined function magnets. We show that the field of combined function magnets traps the electron cloud, present the results of analytical estimates of trapping, and compare them to numerical simulations of electron cloud formation. The electron cloud is located at the beam center and up to 1% of the particles can be trapped by the magnetic field. Since the process of electron cloud build-up is exponential, once trapped this amount of electronsmore » significantly increases the density of the cloud on the next revolution. In a Recycler combined function dipole this multiturn accumulation allows the electron cloud reaching final intensities orders of magnitude greater than in a pure dipole. The multi-turn build-up can be stopped by injection of a clearing bunch of 1010 p at any position in the ring.« less

Optical diagnostics with radiation trapping effect in low density and low temperature helium plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Wonwook, E-mail: wwlee@kaeri.re.kr; Kwon, Duck-Hee; Park, Kyungdeuk

2016-06-15

Low density (n{sub e} < 10{sup 11 }cm{sup −3}) and low temperature (T{sub e} < 10 eV) helium plasma was generated by hot filament discharge. Electron temperature and density of neutral helium plasma were measured by Langmuir probe and were determined by line intensity ratio method using optical emission spectroscopy with population modelings. Simple corona model and collisional-radiative (CR) model without consideration for radiation trapping effect are applied. In addition, CR model taking into account the radiation trapping effect (RTE) is adopted. The change of single line intensity ratio as a function of electron temperature and density were investigated when the RTE is included and excluded.more » The changes of multi line intensity ratios as a function of electron temperature were scanned for various radiative-excitation rate coefficients from the ground state and the helium gas pressures related with the RTE. Our CR modeling with RTE results in fairly better agreement of the spectroscopic diagnostics for the plasma temperature or density with the Langmuir probe measurements for various helium gas pressures than corona modeling and CR modeling without RTE.« less

Compression of a mixed antiproton and electron non-neutral plasma to high densities

NASA Astrophysics Data System (ADS)

Aghion, Stefano; Amsler, Claude; Bonomi, Germano; Brusa, Roberto S.; Caccia, Massimo; Caravita, Ruggero; Castelli, Fabrizio; Cerchiari, Giovanni; Comparat, Daniel; Consolati, Giovanni; Demetrio, Andrea; Di Noto, Lea; Doser, Michael; Evans, Craig; Fanì, Mattia; Ferragut, Rafael; Fesel, Julian; Fontana, Andrea; Gerber, Sebastian; Giammarchi, Marco; Gligorova, Angela; Guatieri, Francesco; Haider, Stefan; Hinterberger, Alexander; Holmestad, Helga; Kellerbauer, Alban; Khalidova, Olga; Krasnický, Daniel; Lagomarsino, Vittorio; Lansonneur, Pierre; Lebrun, Patrice; Malbrunot, Chloé; Mariazzi, Sebastiano; Marton, Johann; Matveev, Victor; Mazzotta, Zeudi; Müller, Simon R.; Nebbia, Giancarlo; Nedelec, Patrick; Oberthaler, Markus; Pacifico, Nicola; Pagano, Davide; Penasa, Luca; Petracek, Vojtech; Prelz, Francesco; Prevedelli, Marco; Rienaecker, Benjamin; Robert, Jacques; Røhne, Ole M.; Rotondi, Alberto; Sandaker, Heidi; Santoro, Romualdo; Smestad, Lillian; Sorrentino, Fiodor; Testera, Gemma; Tietje, Ingmari C.; Widmann, Eberhard; Yzombard, Pauline; Zimmer, Christian; Zmeskal, Johann; Zurlo, Nicola; Antonello, Massimiliano

2018-04-01

We describe a multi-step "rotating wall" compression of a mixed cold antiproton-electron non-neutral plasma in a 4.46 T Penning-Malmberg trap developed in the context of the AEḡIS experiment at CERN. Such traps are routinely used for the preparation of cold antiprotons suitable for antihydrogen production. A tenfold antiproton radius compression has been achieved, with a minimum antiproton radius of only 0.17 mm. We describe the experimental conditions necessary to perform such a compression: minimizing the tails of the electron density distribution is paramount to ensure that the antiproton density distribution follows that of the electrons. Such electron density tails are remnants of rotating wall compression and in many cases can remain unnoticed. We observe that the compression dynamics for a pure electron plasma behaves the same way as that of a mixed antiproton and electron plasma. Thanks to this optimized compression method and the high single shot antiproton catching efficiency, we observe for the first time cold and dense non-neutral antiproton plasmas with particle densities n ≥ 1013 m-3, which pave the way for an efficient pulsed antihydrogen production in AEḡIS.

Effect of dust charging and trapped electrons on nonlinear solitary structures in an inhomogeneous magnetized plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Ravinder; Malik, Hitendra K.; Singh, Khushvant

2012-01-15

Main concerns of the present article are to investigate the effects of dust charging and trapped electrons on the solitary structures evolved in an inhomogeneous magnetized plasma. Such a plasma is found to support two types of waves, namely, fast wave and slow wave. Slow wave propagates in the plasma only when the wave propagation angle {theta} satisfies the condition {theta}{>=}tan{sup -1}{l_brace}({radical}((1+2{sigma})-[(n{sub dlh}({gamma}{sub 1}-1))/(1+n{sub dlh}{gamma}{sub 1})])-v{sub 0}/u{sub 0}){r_brace}, where v{sub 0}(u{sub 0}) is the z- (x-) component of ion drift velocity, {sigma} = T{sub i}/T{sub eff}, n{sub dlh} = n{sub d0}/(n{sub el0} + n{sub eh0}), and {gamma}{sub 1}=-(1/{Phi}{sub i0})[(1-{Phi}{sub i0}/1+{sigma}(1-{Phi}{submore » i0}))] together with T{sub i} as ion temperature, n{sub el0}(n{sub eh0}) as the density of trapped (isothermal) electrons, {Phi}{sub i0} as the dust grain (density n{sub d0}) surface potential relative to zero plasma potential, and T{sub eff}=(n{sub elo}+n{sub eho})T{sub el}T{sub eh}/(n{sub elo}T{sub eh}+n{sub eho}T{sub el}), where T{sub el}(T{sub eh}) is the temperature of trapped (isothermal) electrons. Both the waves evolve in the form of density hill type structures in the plasma, confirming that these solitary structures are compressive in nature. These structures are found to attain higher amplitude when the charge on the dust grains is fluctuated (in comparison with the case of fixed charge) and also when the dust grains and trapped electrons are more in number; the same is the case with higher temperature of ions and electrons. Slow solitary structures show weak dependence on the dust concentration. Both types of structures are found to become narrower under the application of stronger magnetic field. With regard to the charging of dust grains, it is observed that the charge gets reduced for the higher trapped electron density and temperature of ions and electrons, and dust charging shows weak dependence on the ion temperature.« less

A dominant electron trap in molecular beam epitaxial InAlN lattice-matched to GaN

NASA Astrophysics Data System (ADS)

Pandey, Ayush; Bhattacharya, Aniruddha; Cheng, Shaobo; Botton, Gianluigi A.; Mi, Zetian; Bhattacharya, Pallab

2018-04-01

Deep levels in lattice-matched undoped and Si-doped InAlN/GaN grown by plasma-assisted molecular beam epitaxy have been identified and characterized by capacitance and photocapacitance measurements. From x-ray diffraction, reflectance measurements, electron energy loss spectroscopy and high-resolution transmission electron microscopy it is evident that the material has two distinct phases with different compositions. These correspond to In compositions of 18.1% and 25.8%, with corresponding bandgaps of 4.6 eV and 4.1 eV, respectively. The lower bandgap material is present as columnar microstructures in the form of quantum wires. A dominant electron trap with an activation energy of 0.293  ±  0.01 eV, a small capture cross-section of (1.54  ±  0.25)  ×  10-18 cm2, and density increasing linearly with Si doping density is identified in all the samples. The characteristics of the electron trap and variation of diode capacitance are discussed in the context of carrier dynamics involving the dominant trap level and the quantum wires.

Slow electron acoustic double layer (SEADL) structures in bi-ion plasma with trapped electrons

NASA Astrophysics Data System (ADS)

Shan, Shaukat Ali; Imtiaz, Nadia

2018-05-01

The properties of ion acoustic double layer (IADL) structures in bi-ion plasma with electron trapping are investigated by using the quasi-potential analysis. The κ-distributed trapped electrons number density expression is truncated to some finite order of the electrostatic potential. By utilizing the reductive perturbation method, a modified Schamel equation which describes the evolution of the slow electron acoustic double layer (SEADL) with the modified speed due to the presence of bi-ion species is investigated. The Sagdeev-like potential has been derived which accounts for the effect of the electron trapping and superthermality in a bi-ion plasma. It is found that the superthermality index, the trapping efficiency of electrons, and ion to electron temperature ratio are the inhibiting parameters for the amplitude of the slow electron acoustic double layers (SEADLs). However, the enhanced population of the cold ions is found to play a supportive role for the low frequency DLs in bi-ion plasmas. The illustrations have been presented with the help of the bi-ion plasma parameters in the Earth's ionosphere F-region.

Properties of ion temperature gradient and trapped electron modes in tokamak plasmas with inverted density profiles

NASA Astrophysics Data System (ADS)

Du, Huarong; Jhang, Hogun; Hahm, T. S.; Dong, J. Q.; Wang, Z. X.

2017-12-01

We perform a numerical study of linear stability of the ion temperature gradient (ITG) mode and the trapped electron mode (TEM) in tokamak plasmas with inverted density profiles. A local gyrokinetic integral equation is applied for this study. From comprehensive parametric scans, we obtain stability diagrams for ITG modes and TEMs in terms of density and temperature gradient scale lengths. The results show that, for the inverted density profile, there exists a normalized threshold temperature gradient above which the ITG mode and the TEM are either separately or simultaneously unstable. The instability threshold of the TEM for the inverted density profile is substantially different from that for normal and flat density profiles. In addition, deviations are found on the ITG threshold from an early analytic theory in sheared slab geometry with the adiabatic electron response [T. S. Hahm and W. M. Tang, Phys. Fluids B 1, 1185 (1989)]. A possible implication of this work on particle transport in pellet fueled tokamak plasmas is discussed.

Plasma parameters in a multidipole plasma system

NASA Astrophysics Data System (ADS)

Ruscanu, D.; Anita, V.; Popa, G.

Plasma potential and electron number densities and electron temperatures under bi-Maxwellian approximation for electron distribution function of the multidipole argon plasma source system were measured for a gas pressure ranging between 10-4 and 10-3 mbar and an anode-cathode voltage ranging between 40 and 120 V but a constant discharge current intensity. The first group, as ultimate or cold electrons and main electron plasma population, results by trapping of the slow electrons produced by ionisation process due to primary-neutral collisions. The trapping process is produced by potential well due to positive plasma potential with respect to the anode so that electron temperature of the ultimate electrons does not depend on both the gas pressure and discharge voltage. The second group, as secondary or hot electrons, results as degrading process of the primaries and their number density increases while their temperature decreases with the increase of both the gas pressure and discharge voltage.

Annealing shallow traps in electron beam irradiated high mobility metal-oxide-silicon transistors

NASA Astrophysics Data System (ADS)

Kim, Jin-Sung; Tyryshkin, Alexei; Lyon, Stephen

In metal-oxide-silicon (MOS) quantum devices, electron beam lithography (EBL) is known to create defects at the Si/SiO2 interface which can be catastrophic for single electron control. Shallow traps ( meV), which only manifest themselves at low temperature ( 4 K), are especially detrimental to quantum devices but little is known about annealing them. In this work, we use electron spin resonance (ESR) to measure the density of shallow traps in two sets of high mobility (μ) MOS transistors. One set (μ=14,000 cm2/Vs) was irradiated with an EBL dose (10 kV, 40 μC/cm2) and was subsequently annealed in forming gas while the other remained unexposed (μ=23,000 cm2/Vs). Our ESR data show that the forming gas anneal is sufficient to remove shallow traps generated by the EBL dose over the measured shallow trap energy range (0.3-4 meV). We additionally fit these devices' conductivity data to a percolation transition model and extract a zero temperature percolation threshold density, n0 ( 9 ×1010 cm-2 for both devices). We find that the extracted n0 agrees within 15 % with our lowest temperature (360 mK) ESR measurements, demonstrating agreement between two independent methods of evaluating the interface.

A small electron beam ion trap/source facility for electron/neutral–ion collisional spectroscopy in astrophysical plasmas

NASA Astrophysics Data System (ADS)

Liang, Gui-Yun; Wei, Hui-Gang; Yuan, Da-Wei; Wang, Fei-Lu; Peng, Ji-Min; Zhong, Jia-Yong; Zhu, Xiao-Long; Schmidt, Mike; Zschornack, Günter; Ma, Xin-Wen; Zhao, Gang

2018-01-01

Spectra are fundamental observation data used for astronomical research, but understanding them strongly depends on theoretical models with many fundamental parameters from theoretical calculations. Different models give different insights for understanding a specific object. Hence, laboratory benchmarks for these theoretical models become necessary. An electron beam ion trap is an ideal facility for spectroscopic benchmarks due to its similar conditions of electron density and temperature compared to astrophysical plasmas in stellar coronae, supernova remnants and so on. In this paper, we will describe the performance of a small electron beam ion trap/source facility installed at National Astronomical Observatories, Chinese Academy of Sciences.We present some preliminary experimental results on X-ray emission, ion production, the ionization process of trapped ions as well as the effects of charge exchange on the ionization.

Crystal step edges can trap electrons on the surfaces of n-type organic semiconductors.

PubMed

He, Tao; Wu, Yanfei; D'Avino, Gabriele; Schmidt, Elliot; Stolte, Matthias; Cornil, Jérôme; Beljonne, David; Ruden, P Paul; Würthner, Frank; Frisbie, C Daniel

2018-05-30

Understanding relationships between microstructure and electrical transport is an important goal for the materials science of organic semiconductors. Combining high-resolution surface potential mapping by scanning Kelvin probe microscopy (SKPM) with systematic field effect transport measurements, we show that step edges can trap electrons on the surfaces of single crystal organic semiconductors. n-type organic semiconductor crystals exhibiting positive step edge surface potentials display threshold voltages that increase and carrier mobilities that decrease with increasing step density, characteristic of trapping, whereas crystals that do not have positive step edge surface potentials do not have strongly step density dependent transport. A device model and microelectrostatics calculations suggest that trapping can be intrinsic to step edges for crystals of molecules with polar substituents. The results provide a unique example of a specific microstructure-charge trapping relationship and highlight the utility of surface potential imaging in combination with transport measurements as a productive strategy for uncovering microscopic structure-property relationships in organic semiconductors.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vörös, Márton; Brawand, Nicholas P.; Galli, Giulia

Lead chalcogenide (PbX) nanoparticles are promising materials for solar energy conversion. However, the presence of trap states in their electronic gap limits their usability, and developing a universal strategy to remove trap states is a persistent challenge. Using calculations based on density functional theory, we show that hydrogen acts as an amphoteric impurity on PbX nanoparticle surfaces; hydrogen atoms may passivate defects arising from ligand imbalance or off-stoichiometric surface terminations irrespective of whether they originate from cation or anion excess. In addition, we show, using constrained density functional theory calculations, that hydrogen treatment of defective nanoparticles is also beneficial formore » charge transport in films. We also find that hydrogen adsorption on stoichiometric nanoparticles leads to electronic doping, preferentially n-type. Lastly, our findings suggest that postsynthesis hydrogen treatment of lead chalcogenide nanoparticle films is a viable approach to reduce electronic trap states or to dope well-passivated films.« less

Self-injection of electrons in a laser-wakefield accelerator by using longitudinal density ripple

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dahiya, Deepak; Sharma, A. K.; Sajal, Vivek

By introducing a longitudinal density ripple (periodic modulation in background plasma density), we demonstrate self-injection of electrons in a laser-wakefield accelerator. The wakefield driven plasma wave, in presence of density ripple excites two side band waves of same frequency but different wave numbers. One of these side bands, having smaller phase velocity compared to wakefield driven plasma wave, preaccelerates the background plasma electrons. Significant number of these preaccelerated electrons get trapped in the laser-wakefield and further accelerated to higher energies.

Extraction of carrier mobility and interface trap density in InGaAs metal oxide semiconductor structures using gated Hall method

NASA Astrophysics Data System (ADS)

Chidambaram, Thenappan

III-V semiconductors are potential candidates to replace Si as a channel material in next generation CMOS integrated circuits owing to their superior carrier mobilities. Low density of states (DOS) and typically high interface and border trap densities (Dit) in high mobility group III-V semiconductors provide difficulties in quantification of Dit near the conduction band edge. The trap response above the threshold voltage of a MOSFET can be very fast, and conventional Dit extraction methods, based on capacitance/conductance response (CV methods) of MOS capacitors at frequencies <1MHz, cannot distinguish conducting and trapped carriers. In addition, the CV methods have to deal with high dispersion in the accumulation region that makes it a difficult task to measure the true oxide capacitance, Cox value. Another implication of these properties of III-V interfaces is an ambiguity of determination of electron density in the MOSFET channel. Traditional evaluation of carrier density by integration of the C-V curve, gives incorrect values for D it and mobility. Here we employ gated Hall method to quantify the D it spectrum at the high-K oxide/III-V semiconductor interface for buried and surface channel devices using Hall measurement and capacitance-voltage data. Determination of electron density directly from Hall measurements allows for obtaining true mobility values.

Effect of current density on electron beam induced charging in MgO

NASA Astrophysics Data System (ADS)

Boughariou, Aicha; Hachicha, Olfa; Kallel, Ali; Blaise, Guy

2005-11-01

It is well known that the presence of space charge in an insulator is correlated with an electric breakdown. Many studies have been carried out on the experimental characterization of space charges. In this paper, we outline the dependence on the current density of the charge-trapping phenomenon in magnesium oxide. Our study was performed with a dedicated scanning electron microscope (SEM) on the electrical property evolution of surface of magnesium oxide (1 0 0) (MgO) single crystal, during a 1.1, 5 and 30 keV electron irradiation. The types of charges trapped on the irradiated areas and the charging kinetics are determined by measuring the total secondary electron emission (SEE) σ during the injection process by means of two complementary detectors. At low energies 1.1 and 5 keV, two different kinds of self-regulated regime (σ = 1) were observed as a function of current density. At 30 keV energy, the electron emission appears to be stimulated by the current density, due to the Poole-Frenkel effect.

Hydrogen treatment as a detergent of electronic trap states in lead chalcogenide nanoparticles

NASA Astrophysics Data System (ADS)

Voros, Marton; Brawand, Nicholas; Galli, Giulia

Lead chalcogenide (PbX) nanoparticles are promising materials for solar energy conversion. However, the presence of trap states in their electronic gap limits their usability, and developing a universal strategy to remove trap states is a persistent challenge. Using calculations based on density functional theory, we show that hydrogen acts as an amphoteric impurity on PbX nanoparticle surfaces; hydrogen atoms may passivate defects arising from ligand imbalance or off-stoichiometric surface terminations, irrespective of whether they originate from cation or anion excess. In addition, we show, using constrained density functional theory calculations, that hydrogen treatment of defective nanoparticles is also beneficial for charge transport in films. We also find that hydrogen adsorption on stoichiometric nanoparticles leads to electronic doping, preferentially n-type. Our findings suggest that post-synthesis hydrogen treatment of lead chalcogenide nanoparticle films is a viable approach to reduce electronic trap states or to dope well-passivated films. Work supported by the Center for Advanced Solar Photophysics, an Energy Frontier Research Center funded by the US Department of Energy (DOE), Office of Science, Office of Basic Energy Sciences (NB) and U.S. DOE under Contract No. DE-AC02-06CH11357 (MV).

Electrical characterization of amorphous Al2O3 dielectric films on n-type 4H-SiC

NASA Astrophysics Data System (ADS)

Khosa, R. Y.; Thorsteinsson, E. B.; Winters, M.; Rorsman, N.; Karhu, R.; Hassan, J.; Sveinbjörnsson, E. Ö.

2018-02-01

We report on the electrical properties of Al2O3 films grown on 4H-SiC by successive thermal oxidation of thin Al layers at low temperatures (200°C - 300°C). MOS capacitors made using these films contain lower density of interface traps, are more immune to electron injection and exhibit higher breakdown field (5MV/cm) than Al2O3 films grown by atomic layer deposition (ALD) or rapid thermal processing (RTP). Furthermore, the interface state density is significantly lower than in MOS capacitors with nitrided thermal silicon dioxide, grown in N2O, serving as the gate dielectric. Deposition of an additional SiO2 film on the top of the Al2O3 layer increases the breakdown voltage of the MOS capacitors while maintaining low density of interface traps. We examine the origin of negative charges frequently encountered in Al2O3 films grown on SiC and find that these charges consist of trapped electrons which can be released from the Al2O3 layer by depletion bias stress and ultraviolet light exposure. This electron trapping needs to be reduced if Al2O3 is to be used as a gate dielectric in SiC MOS technology.

Electron self-injection and trapping into an evolving plasma bubble.

PubMed

Kalmykov, S; Yi, S A; Khudik, V; Shvets, G

2009-09-25

The blowout (or bubble) regime of laser wakefield acceleration is promising for generating monochromatic high-energy electron beams out of low-density plasmas. It is shown analytically and by particle-in-cell simulations that self-injection of the background plasma electrons into the quasistatic plasma bubble can be caused by slow temporal expansion of the bubble. Sufficient criteria for the electron trapping and bubble's expansion rate are derived using a semianalytic nonstationary Hamiltonian theory. It is further shown that the combination of bubble's expansion and contraction results in monoenergetic electron beams.

Ion Temperature Measurements in an electron beam ion trap (EBIT)

NASA Astrophysics Data System (ADS)

Beiersdorfer, P.; Decaux, V.; Widmann, K.

1997-11-01

An electron beam ion trap consists of a Penning-type cylindrical trap traversed by a high-energy (<= 200 keV), high-density (Ne <= 10^13 cm-3) electron beam. Ions are trapped by the space charge potential of the electron beam, a static potential on the end electrodes, and a 3-T axial magnetic field [1]. The ions are heated by the electron beam and leave the trap once their kinetic energy suffices to overcome the potential barriers. Using high-resolution x-ray spectroscopy, we have made systematic measurements of the temperature of Ti^20+ and Cs^45+ ions in the trap [2]. The dependence of the ion temperature on operating parameters, such as trapping potential, beam current, and neutral gas pressure, will be presented. Temperatures as low as 15.4 ± 4.4 eV and as high as 2 keV were observed. *Work performed under the auspices of the U.S.D.o.E. by Lawrence Livermore National Laboratory under contract No. W-7405-ENG-48. [1] M. Levine et al., Phys. Scripta T22, 157 (1989). [2]P. Beiersdorfer et al., PRL 77, 5356 (1996); P. Beiersdorfer, in AIP Conf. Proc. No. 389, p. 121 (1997).

Solution processed molecular floating gate for flexible flash memories

NASA Astrophysics Data System (ADS)

Zhou, Ye; Han, Su-Ting; Yan, Yan; Huang, Long-Biao; Zhou, Li; Huang, Jing; Roy, V. A. L.

2013-10-01

Solution processed fullerene (C60) molecular floating gate layer has been employed in low voltage nonvolatile memory device on flexible substrates. We systematically studied the charge trapping mechanism of the fullerene floating gate for both p-type pentacene and n-type copper hexadecafluorophthalocyanine (F16CuPc) semiconductor in a transistor based flash memory architecture. The devices based on pentacene as semiconductor exhibited both hole and electron trapping ability, whereas devices with F16CuPc trapped electrons alone due to abundant electron density. All the devices exhibited large memory window, long charge retention time, good endurance property and excellent flexibility. The obtained results have great potential for application in large area flexible electronic devices.

Solution processed molecular floating gate for flexible flash memories

PubMed Central

Zhou, Ye; Han, Su-Ting; Yan, Yan; Huang, Long-Biao; Zhou, Li; Huang, Jing; Roy, V. A. L.

2013-01-01

Solution processed fullerene (C60) molecular floating gate layer has been employed in low voltage nonvolatile memory device on flexible substrates. We systematically studied the charge trapping mechanism of the fullerene floating gate for both p-type pentacene and n-type copper hexadecafluorophthalocyanine (F16CuPc) semiconductor in a transistor based flash memory architecture. The devices based on pentacene as semiconductor exhibited both hole and electron trapping ability, whereas devices with F16CuPc trapped electrons alone due to abundant electron density. All the devices exhibited large memory window, long charge retention time, good endurance property and excellent flexibility. The obtained results have great potential for application in large area flexible electronic devices. PMID:24172758

Non-localized trapping effects in AlGaN/GaN heterojunction field-effect transistors subjected to on-state bias stress

NASA Astrophysics Data System (ADS)

Hu, Cheng-Yu; Hashizume, Tamotsu

2012-04-01

For AlGaN/GaN heterojunction field-effect transistors, on-state-bias-stress (on-stress)-induced trapping effects were observed across the entire drain access region, not only at the gate edge. However, during the application of on-stress, the highest electric field was only localized at the drain side of the gate edge. Using the location of the highest electric field as a reference, the trapping effects at the gate edge and at the more distant access region were referred to as localized and non-localized trapping effect, respectively. Using two-dimensional-electron-gas sensing-bar (2DEG-sensing-bar) and dual-gate structures, the non-localized trapping effects were investigated and the trap density was measured to be ˜1.3 × 1012 cm-2. The effect of passivation was also discussed. It was found that both surface leakage currents and hot electrons are responsible for the non-localized trapping effects with hot electrons having the dominant effect. Since hot electrons are generated from the 2DEG channel, it is highly likely that the involved traps are mainly in the GaN buffer layer. Using monochromatic irradiation (1.24-2.81 eV), the trap levels responsible for the non-localized trapping effects were found to be located at 0.6-1.6 eV from the valence band of GaN. Both trap-assisted impact ionization and direct channel electron injection are proposed as the possible mechanisms of the hot-electron-related non-localized trapping effect. Finally, using the 2DEG-sensing-bar structure, we directly confirmed that blocking gate injected electrons is an important mechanism of Al2O3 passivation.

Origin of Negative Capacitance in Bipolar Organic Diodes

NASA Astrophysics Data System (ADS)

Niu, Quan; Crǎciun, N. Irina; Wetzelaer, Gert-Jan A. H.; Blom, Paul W. M.

2018-03-01

Negative differential capacitance (NC) occurring at low frequencies in organic light-emitting diodes (OLEDs) is a poorly understood phenomenon. We study the origin of the NC effect by systematically varying the number of electron traps in OLEDs based on the polymeric semiconductor poly(p -phenylene vinylene). Increasing the electron trap density enhances the NC effect. The magnitude and observed decrease of the relaxation time is consistent with the (inverse) rate of trap-assisted recombination. The absence of NC in a nearly trap-free light-emitting diode unambiguously shows that trap-assisted recombination is the responsible mechanism for the negative contribution to the capacitance in bipolar organic diodes. Our results reveal that the NC effect can be exploited to quantitatively determine the number of traps in organic semiconductors in a nondestructive fashion.

Ultralow-Power Electronic Trapping of Nanoparticles with Sub-10 nm Gold Nanogap Electrodes.

PubMed

Barik, Avijit; Chen, Xiaoshu; Oh, Sang-Hyun

2016-10-12

We demonstrate nanogap electrodes for rapid, parallel, and ultralow-power trapping of nanoparticles. Our device pushes the limit of dielectrophoresis by shrinking the separation between gold electrodes to sub-10 nm, thereby creating strong trapping forces at biases as low as the 100 mV ranges. Using high-throughput atomic layer lithography, we manufacture sub-10 nm gaps between 0.8 mm long gold electrodes and pattern them into individually addressable parallel electronic traps. Unlike pointlike junctions made by electron-beam lithography or larger micron-gap electrodes that are used for conventional dielectrophoresis, our sub-10 nm gold nanogap electrodes provide strong trapping forces over a mm-scale trapping zone. Importantly, our technology solves the key challenges associated with traditional dielectrophoresis experiments, such as high voltages that cause heat generation, bubble formation, and unwanted electrochemical reactions. The strongly enhanced fields around the nanogap induce particle-transport speed exceeding 10 μm/s and enable the trapping of 30 nm polystyrene nanoparticles using an ultralow bias of 200 mV. We also demonstrate rapid electronic trapping of quantum dots and nanodiamond particles on arrays of parallel traps. Our sub-10 nm gold nanogap electrodes can be combined with plasmonic sensors or nanophotonic circuitry, and their low-power electronic operation can potentially enable high-density integration on a chip as well as portable biosensing.

Electron Plasmas Cooled by Cyclotron-Cavity Resonance

DOE PAGES

Povilus, A. P.; DeTal, N. D.; Evans, L. T.; ...

2016-10-21

We observe that high-Q electromagnetic cavity resonances increase the cyclotron cooling rate of pure electron plasmas held in a Penning-Malmberg trap when the electron cyclotron frequency, controlled by tuning the magnetic field, matches the frequency of standing wave modes in the cavity. For certain modes and trapping configurations, this can increase the cooling rate by factors of 10 or more. In this paper, we investigate the variation of the cooling rate and equilibrium plasma temperatures over a wide range of parameters, including the plasma density, plasma position, electron number, and magnetic field.

Defect-mediated transport and electronic irradiation effect in individual domains of CVD-grown monolayer MoS 2

DOE PAGES

Durand, Corentin; Zhang, Xiaoguang; Fowlkes, Jason; ...

2015-01-16

We study the electrical transport properties of atomically thin individual crystalline grains of MoS 2 with four-probe scanning tunneling microscopy. The monolayer MoS 2 domains are synthesized by chemical vapor deposition on SiO 2/Si substrate. Temperature dependent measurements on conductance and mobility show that transport is dominated by an electron charge trapping and thermal release process with very low carrier density and mobility. The effects of electronic irradiation are examined by exposing the film to electron beam in the scanning electron microscope in an ultrahigh vacuum environment. The irradiation process is found to significantly affect the mobility and the carriermore » density of the material, with the conductance showing a peculiar time-dependent relaxation behavior. It is suggested that the presence of defects in active MoS 2 layer and dielectric layer create charge trapping sites, and a multiple trapping and thermal release process dictates the transport and mobility characteristics. The electron beam irradiation promotes the formation of defects and impact the electrical properties of MoS 2. Finally, our study reveals the important roles of defects and the electron beam irradiation effects in the electronic properties of atomic layers of MoS 2.« less

Origin of the different transport properties of electron and hole polarons in an ambipolar polyselenophene-based conjugated polymer

NASA Astrophysics Data System (ADS)

Chen, Zhuoying; Bird, Matthew; Lemaur, Vincent; Radtke, Guillaume; Cornil, Jérôme; Heeney, Martin; McCulloch, Iain; Sirringhaus, Henning

2011-09-01

Understanding the mechanisms limiting ambipolar transport in conjugated polymer field-effect transistors (FETs) is of both fundamental and practical interest. Here, we present a systematic study comparing hole and electron charge transport in an ambipolar conjugated polymer, semicrystalline poly(3,3''-di-n-decylterselenophene) (PSSS). Starting from a detailed analysis of the device characteristics and temperature/charge-density dependence of the mobility, we interpret the difference between hole and electron transport through both the Vissenberg-Matters and the mobility-edge model. To obtain microscopic insight into the quantum mechanical wave function of the charges at a molecular level, we combine charge modulation spectroscopy (CMS) measuring the charge-induced absorption signatures from positive and negative polarons in these ambipolar FETs with corresponding density functional theory (DFT) calculations. We observe a significantly higher switch-on voltage for electrons than for holes due to deep electron trap states, but also a higher activation energy of the mobility for mobile electrons. The CMS spectra reveal that the electrons that remain mobile and contribute to the FET current have a wave function that is more localized onto a single polymer chain than that of holes, which is extended over several polymer chains. We interpret this as evidence that the transport properties of the mobile electrons in PSSS are still affected by the presence of deep electron traps. The more localized electron state could be due to the mobile electrons interacting with shallow trap states in the vicinity of a chemical, potentially water-related, impurity that might precede the capture of the electron into a deeply trapped state.

Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Tian-Li, E-mail: Tian-Li.Wu@imec.be; Groeseneken, Guido; Department of Electrical Engineering, KU Leuven, Leuven

2015-08-31

In this paper, three electrical techniques (frequency dependent conductance analysis, AC transconductance (AC-g{sub m}), and positive gate bias stress) were used to evaluate three different gate dielectrics (Plasma-Enhanced Atomic Layer Deposition Si{sub 3}N{sub 4}, Rapid Thermal Chemical Vapor Deposition Si{sub 3}N{sub 4}, and Atomic Layer Deposition (ALD) Al{sub 2}O{sub 3}) for AlGaN/GaN Metal-Insulator-Semiconductor High-Electron-Mobility Transistors. From these measurements, the interface state density (D{sub it}), the amount of border traps, and the threshold voltage (V{sub TH}) shift during a positive gate bias stress can be obtained. The results show that the V{sub TH} shift during a positive gate bias stress ismore » highly correlated to not only interface states but also border traps in the dielectric. A physical model is proposed describing that electrons can be trapped by both interface states and border traps. Therefore, in order to minimize the V{sub TH} shift during a positive gate bias stress, the gate dielectric needs to have a lower interface state density and less border traps. However, the results also show that the commonly used frequency dependent conductance analysis technique to extract D{sub it} needs to be cautiously used since the resulting value might be influenced by the border traps and, vice versa, i.e., the g{sub m} dispersion commonly attributed to border traps might be influenced by interface states.« less

Modeling electronic trap state distributions in nanocrystalline anatase

NASA Astrophysics Data System (ADS)

Le, Nam; Schweigert, Igor

The charge transport properties of nanocrystalline TiO2 films, and thus the catalytic performance of devices that incorporate them, are affected strongly by the spatial and energetic distribution of localized electronic trap states. Such traps may arise from a variety of defects: Ti interstitials, O vacancies, step edges at surfaces, and grain boundaries. We have developed a procedure for applying density functional theory (DFT) and density functional tight binding (DFTB) calculations to characterize distributions of localized states arising from multiple types of defects. We have applied the procedure to investigate how the morphologies of interfaces between pairs of attached anatase nanoparticles determine the energies of trap states therein. Our results complement recent experimental findings that subtle changes in the morphology of highly porous TiO2 aerogel networks can have a dramatic effect on catalytic performance, which was attributed to changes in the distribution of trap states. This work was supported by the U.S. Naval Research Laboratory via the National Research Council and by the Office of Naval Research through the U.S. Naval Research Laboratory.

Identification of the spatial location of deep trap states in AlGaN/GaN heterostructures by surface photovoltage spectroscopy

NASA Astrophysics Data System (ADS)

Jana, Dipankar; Porwal, S.; Sharma, T. K.

2017-12-01

Spatial and spectral origin of deep level defects in molecular beam epitaxy grown AlGaN/GaN heterostructures are investigated by using surface photovoltage spectroscopy (SPS) and pump-probe SPS techniques. A deep trap center ∼1 eV above the valence band is observed in SPS measurements which is correlated with the yellow luminescence feature in GaN. Capture of electrons and holes is resolved by performing temperature dependent SPS and pump-probe SPS measurements. It is found that the deep trap states are distributed throughout the sample while their dominance in SPS spectra depends on the density, occupation probability of deep trap states and the background electron density of GaN channel layer. Dynamics of deep trap states associated with GaN channel layer is investigated by performing frequency dependent photoluminescence (PL) and SPS measurements. A time constant of few millisecond is estimated for the deep defects which might limit the dynamic performance of AlGaN/GaN based devices.

On the correct implementation of Fermi-Dirac statistics and electron trapping in nonlinear electrostatic plane wave propagation in collisionless plasmas

NASA Astrophysics Data System (ADS)

Schamel, Hans; Eliasson, Bengt

2016-05-01

Quantum statistics and electron trapping have a decisive influence on the propagation characteristics of coherent stationary electrostatic waves. The description of these strictly nonlinear structures, which are of electron hole type and violate linear Vlasov theory due to the particle trapping at any excitation amplitude, is obtained by a correct reduction of the three-dimensional Fermi-Dirac distribution function to one dimension and by a proper incorporation of trapping. For small but finite amplitudes, the holes become of cnoidal wave type and the electron density is shown to be described by a ϕ ( x ) 1 / 2 rather than a ϕ ( x ) expansion, where ϕ ( x ) is the electrostatic potential. The general coefficients are presented for a degenerate plasma as well as the quantum statistical analogue to these steady state coherent structures, including the shape of ϕ ( x ) and the nonlinear dispersion relation, which describes their phase velocity.

The electron trap parameter extraction-based investigation of the relationship between charge trapping and activation energy in IGZO TFTs under positive bias temperature stress

NASA Astrophysics Data System (ADS)

Rhee, Jihyun; Choi, Sungju; Kang, Hara; Kim, Jae-Young; Ko, Daehyun; Ahn, Geumho; Jung, Haesun; Choi, Sung-Jin; Myong Kim, Dong; Kim, Dae Hwan

2018-02-01

Experimental extraction of the electron trap parameters which are associated with charge trapping into gate insulators under the positive bias temperature stress (PBTS) is proposed and demonstrated for the first time in amorphous indium-gallium-zinc-oxide thin-film transistors. This was done by combining the PBTS/recovery time-evolution of the experimentally decomposed threshold voltage shift (ΔVT) and the technology computer-aided design (TCAD)-based charge trapping simulation. The extracted parameters were the trap density (NOT) = 2.6 × 1018 cm-3, the trap energy level (ΔET) = 0.6 eV, and the capture cross section (σ0) = 3 × 10-19 cm2. Furthermore, based on the established TCAD framework, the relationship between the electron trap parameters and the activation energy (Ea) is comprehensively investigated. It is found that Ea increases with an increase in σ0, whereas Ea is independent of NOT. In addition, as ΔET increases, Ea decreases in the electron trapping-dominant regime (low ΔET) and increases again in the Poole-Frenkel (PF) emission/hopping-dominant regime (high ΔET). Moreover, our results suggest that the cross-over ΔET point originates from the complicated temperature-dependent competition between the capture rate and the emission rate. The PBTS bias dependence of the relationship between Ea and ΔET suggests that the electric field dependence of the PF emission-based electron hopping is stronger than that of the thermionic field emission-based electron trapping.

Observation of trapped-electron-mode microturbulence in reversed field pinch plasmas

NASA Astrophysics Data System (ADS)

Duff, J. R.; Williams, Z. R.; Brower, D. L.; Chapman, B. E.; Ding, W. X.; Pueschel, M. J.; Sarff, J. S.; Terry, P. W.

2018-01-01

Density fluctuations in the large-density-gradient region of improved confinement Madison Symmetric Torus reversed field pinch (RFP) plasmas exhibit multiple features that are characteristic of the trapped-electron mode (TEM). Core transport in conventional RFP plasmas is governed by magnetic stochasticity stemming from multiple long-wavelength tearing modes. Using inductive current profile control, these tearing modes are reduced, and global confinement is increased to that expected for comparable tokamak plasmas. Under these conditions, new short-wavelength fluctuations distinct from global tearing modes appear in the spectrum at a frequency of f ˜ 50 kHz, which have normalized perpendicular wavenumbers k⊥ρs≲ 0.2 and propagate in the electron diamagnetic drift direction. They exhibit a critical-gradient threshold, and the fluctuation amplitude increases with the local electron density gradient. These characteristics are consistent with predictions from gyrokinetic analysis using the Gene code, including increased TEM turbulence and transport from the interaction of remnant tearing magnetic fluctuations and zonal flow.

Role of the dielectric for the charging dynamics of the dielectric/barrier interface in AlGaN/GaN based metal-insulator-semiconductor structures under forward gate bias stress

NASA Astrophysics Data System (ADS)

Lagger, P.; Steinschifter, P.; Reiner, M.; Stadtmüller, M.; Denifl, G.; Naumann, A.; Müller, J.; Wilde, L.; Sundqvist, J.; Pogany, D.; Ostermaier, C.

2014-07-01

The high density of defect states at the dielectric/III-N interface in GaN based metal-insulator-semiconductor structures causes tremendous threshold voltage drifts, ΔVth, under forward gate bias conditions. A comprehensive study on different dielectric materials, as well as varying dielectric thickness tD and barrier thickness tB, is performed using capacitance-voltage analysis. It is revealed that the density of trapped electrons, ΔNit, scales with the dielectric capacitance under spill-over conditions, i.e., the accumulation of a second electron channel at the dielectric/AlGaN barrier interface. Hence, the density of trapped electrons is defined by the charging of the dielectric capacitance. The scaling behavior of ΔNit is explained universally by the density of accumulated electrons at the dielectric/III-N interface under spill-over conditions. We conclude that the overall density of interface defects is higher than what can be electrically measured, due to limits set by dielectric breakdown. These findings have a significant impact on the correct interpretation of threshold voltage drift data and are of relevance for the development of normally off and normally on III-N/GaN high electron mobility transistors with gate insulation.

Analysis of microscopic parameters of surface charging in polymer caused by defocused electron beam irradiation.

PubMed

Liu, Jing; Zhang, Hai-Bo

2014-12-01

The relationship between microscopic parameters and polymer charging caused by defocused electron beam irradiation is investigated using a dynamic scattering-transport model. The dynamic charging process of an irradiated polymer using a defocused 30 keV electron beam is conducted. In this study, the space charge distribution with a 30 keV non-penetrating e-beam is negative and supported by some existing experimental data. The internal potential is negative, but relatively high near the surface, and it decreases to a maximum negative value at z=6 μm and finally tend to 0 at the bottom of film. The leakage current and the surface potential behave similarly, and the secondary electron and leakage currents follow the charging equilibrium condition. The surface potential decreases with increasing beam current density, trap concentration, capture cross section, film thickness and electron-hole recombination rate, but with decreasing electron mobility and electron energy. The total charge density increases with increasing beam current density, trap concentration, capture cross section, film thickness and electron-hole recombination rate, but with decreasing electron mobility and electron energy. This study shows a comprehensive analysis of microscopic factors of surface charging characteristics in an electron-based surface microscopy and analysis. Copyright © 2014 Elsevier Ltd. All rights reserved.

High concentration effects of neutral-potential-well interface traps on recombination dc current-voltage lineshape in metal-oxide-silicon transistors

NASA Astrophysics Data System (ADS)

Chen, Zuhui; Jie, Bin B.; Sah, Chih-Tang

2008-11-01

Steady-state Shockley-Read-Hall kinetics is employed to explore the high concentration effect of neutral-potential-well interface traps on the electron-hole recombination direct-current current-voltage (R-DCIV) properties in metal-oxide-silicon field-effect transistors. Extensive calculations include device parameter variations in neutral-trapping-potential-well electron interface-trap density NET (charge states 0 and -1), dopant impurity concentration PIM, oxide thickness Xox, forward source/drain junction bias VPN, and transistor temperature T. It shows significant distortion of the R-DCIV lineshape by the high concentrations of the interface traps. The result suggests that the lineshape distortion observed in past experiments, previously attributed to spatial variation in surface impurity concentration and energy distribution of interface traps in the silicon energy gap, can also arise from interface-trap concentration along surface channel region.

Glow plasma trigger for electron cyclotron resonance ion sources.

PubMed

Vodopianov, A V; Golubev, S V; Izotov, I V; Nikolaev, A G; Oks, E M; Savkin, K P; Yushkov, G Yu

2010-02-01

Electron cyclotron resonance ion sources (ECRISs) are particularly useful for nuclear, atomic, and high energy physics, as unique high current generators of multicharged ion beams. Plasmas of gas discharges in an open magnetic trap heated by pulsed (100 micros and longer) high power (100 kW and higher) high-frequency (greater than 37.5 GHz) microwaves of gyrotrons is promising in the field of research in the development of electron cyclotron resonance sources for high charge state ion beams. Reaching high ion charge states requires a decrease in gas pressure in the magnetic trap, but this method leads to increases in time, in which the microwave discharge develops. The gas breakdown and microwave discharge duration becomes greater than or equal to the microwave pulse duration when the pressure is decreased. This makes reaching the critical plasma density initiate an electron cyclotron resonance (ECR) discharge during pulse of microwave gyrotron radiation with gas pressure lower than a certain threshold. In order to reduce losses of microwave power, it is necessary to shorten the time of development of the ECR discharge. For fast triggering of ECR discharge under low pressure in an ECRIS, we initially propose to fill the magnetic trap with the plasmas of auxiliary pulsed discharges in crossed ExB fields. The glow plasma trigger of ECR based on a Penning or magnetron discharge has made it possible not only to fill the trap with plasma with density of 10(12) cm(-3), required for a rapid increase in plasma density and finally for ECR discharge ignition, but also to initially heat the plasma electrons to T(e) approximately = 20 eV.

Radiation effects in x-irradiated hydroxy compounds

NASA Astrophysics Data System (ADS)

Budzinski, Edwin E.; Potter, William R.; Box, Harold C.

1980-01-01

Radiation effects are compared in single crystals of xylitol, sorbitol, and dulcitol x-irradiated at 4.2 °K. In xylitol and dulcitol, but not in sorbitol, a primary oxidation product is identified as an alkoxy radical. ENDOR measurements detected three proton hyperfine couplings associated with the alkoxy ESR absorption, one of which is attributed to a proton three bond lengths removed from the seat of unpaired spin density. Intermolecular trapping of electrons is observed in all three crystals. ENDOR measurements were made of the hyperfine couplings between the trapped electron and the hydroxy protons forming the trap.

Non-contact, non-destructive, quantitative probing of interfacial trap sites for charge carrier transport at semiconductor-insulator boundary

NASA Astrophysics Data System (ADS)

Choi, Wookjin; Miyakai, Tomoyo; Sakurai, Tsuneaki; Saeki, Akinori; Yokoyama, Masaaki; Seki, Shu

2014-07-01

The density of traps at semiconductor-insulator interfaces was successfully estimated using microwave dielectric loss spectroscopy with model thin-film organic field-effect transistors. The non-contact, non-destructive analysis technique is referred to as field-induced time-resolved microwave conductivity (FI-TRMC) at interfaces. Kinetic traces of FI-TRMC transients clearly distinguished the mobile charge carriers at the interfaces from the immobile charges trapped at defects, allowing both the mobility of charge carriers and the number density of trap sites to be determined at the semiconductor-insulator interfaces. The number density of defects at the interface between evaporated pentacene on a poly(methylmethacrylate) insulating layer was determined to be 1012 cm-2, and the hole mobility was up to 6.5 cm2 V-1 s-1 after filling the defects with trapped carriers. The FI-TRMC at interfaces technique has the potential to provide rapid screening for the assessment of interfacial electronic states in a variety of semiconductor devices.

Dynamics and reactivity of trapped electrons on supported ice crystallites.

PubMed

Stähler, Julia; Gahl, Cornelius; Wolf, Martin

2012-01-17

The solvation dynamics and reactivity of localized excess electrons in aqueous environments have attracted great attention in many areas of physics, chemistry, and biology. This manifold attraction results from the importance of water as a solvent in nature as well as from the key role of low-energy electrons in many chemical reactions. One prominent example is the electron-induced dissociation of chlorofluorocarbons (CFCs). Low-energy electrons are also critical in the radiation chemistry that occurs in nuclear reactors. Excess electrons in an aqueous environment are localized and stabilized by the local rearrangement of the surrounding water dipoles. Such solvated or hydrated electrons are known to play an important role in systems such as biochemical reactions and atmospheric chemistry. Despite numerous studies over many years, little is known about the microscopic details of these electron-induced chemical processes, and interest in the fundamental processes involved in the reactivity of trapped electrons continues. In this Account, we present a surface science study of the dynamics and reactivity of such localized low-energy electrons at D(2)O crystallites that are supported by a Ru(001) single crystal metal surface. This approach enables us to investigate the generation and relaxation dynamics as well as dissociative electron attachment (DEA) reaction of excess electrons under well-defined conditions. They are generated by photoexcitation in the metal template and transferred to trapping sites at the vacuum interface of crystalline D(2)O islands. In these traps, the electrons are effectively decoupled from the electronic states of the metal template, leading to extraordinarily long excited state lifetimes on the order of minutes. Using these long-lived, low-energy electrons, we study the DEA to CFCl(3) that is coadsorbed at very low concentrations (∼10(12) cm(-2)). Using rate equations and direct measurement of the change of surface dipole moment, we estimated the electron surface density for DEA, yielding cross sections that are orders of magnitude higher than the electron density measured in the gas phase.

Confinement time exceeding one second for a toroidal electron plasma.

PubMed

Marler, J P; Stoneking, M R

2008-04-18

Nearly steady-state electron plasmas are trapped in a toroidal magnetic field for the first time. We report the first results from a new toroidal electron plasma experiment, the Lawrence Non-neutral Torus II, in which electron densities on the order of 10(7) cm(-3) are trapped in a 270-degree toroidal arc (670 G toroidal magnetic field) by application of trapping potentials to segments of a conducting shell. The total charge inferred from measurements of the frequency of the m=1 diocotron mode is observed to decay on a 3 s time scale, a time scale that approaches the predicted limit due to magnetic pumping transport. Three seconds represents approximately equal to 10(5) periods of the lowest frequency plasma mode, indicating that nearly steady-state conditions are achieved.

Surface electroluminescence phenomena correlated with trapping parameters of insulating polymers

NASA Astrophysics Data System (ADS)

Zhang, Guan-Jun; Yang, Kai; Dong, Ming; Zhao, Wen-Bin; Yan, Zhang

2007-12-01

Electroluminescence (EL) phenomena are closely linked to the space charge and degradation in insulating polymers, and dominated by the luminescence and trap centers. EL emission has been promising in defining the onset of electrical aging and in the investigation of dissipation mechanisms. Generally, polymeric degradation reveals the increment of the density of luminescence and trap centers, so a fundamental study is proposed to correlate the EL emission of insulating polymers and their trapping parameters. A sensitive photon counting system is constructed to detect the weak EL. The time- and phase-resolved EL characteristics from different polymers (LDPE, PP and PTFE) are investigated with a planar electrode configuration under stepped ac voltage in vacuum. In succession, each sample is charged with exposing to multi-needle corona discharge, and then its surface potential decay is continuously recorded at a constant temperature. Based on the isothermal relaxation current theory, the energy level and density of both electron and hole trap distribution in the surface layer of each polymer is obtained. It is preliminarily concluded that EL phenomena are strongly affected by the trap properties, and for different polymers, its EL intensity is in direct contrast to its surface trap density, and this can be qualitatively explained by the trapping and detrapping sequence of charge carriers in trap centers with different energy level.

Density-Gradient-Driven trapped-electron-modes in improved-confinement RFP plasmas

NASA Astrophysics Data System (ADS)

Duff, James; Sarff, John; Ding, Weixing; Brower, David; Parke, Eli; Chapman, Brett; Terry, Paul; Pueschel, M. J.; Williams, Zach

2017-10-01

Short wavelength density fluctuations in improved-confinement MST plasmas exhibit multiple features characteristic of the trapped-electron-mode (TEM). Core transport in the RFP is normally governed by magnetic stochasticity stemming from long wavelength tearing modes that arise from current profile peaking, which are suppressed via inductive control for this work. The improved confinement is associated with an increase in the pressure gradient that can destabilize drift waves. The measured density fluctuations have f 50 kHz, kϕρs < 0.14 , and propagate in the electron drift direction. Their spectral emergence coincides with a sharp decrease in global tearing mode associated fluctuations, their amplitude increases with local density gradient, and they exhibit a density-gradient threshold at R /Ln 15 . The GENE code, modified for the RFP, predicts the onset of density-gradient-driven TEM for these strong-gradient plasma conditions. While nonlinear analysis shows a large Dimits shift associated with predicted strong zonal flows, the inclusion of residual magnetic fluctuations, comparable to experimental magnetic fluctuations, causes a collapse of the zonal flows and an increase in the predicted transport to a level close to the experimentally measured heat flux. Work supported by US DOE.

A high-current electron gun for the electron beam ion trap at the National Superconducting Cyclotron Laboratory.

PubMed

Schwarz, S; Baumann, T M; Kittimanapun, K; Lapierre, A; Snyder, A

2014-02-01

The Electron Beam Ion Trap (EBIT) in NSCL's reaccelerator ReA uses continuous ion injection and accumulation. In order to maximize capture efficiency and minimize breeding time into high charge states, the EBIT requires a high-current/high current-density electron beam. A new electron gun insert based on a concave Ba-dispenser cathode has been designed and built to increase the current transmitted through the EBIT's superconducting magnet. With the new insert, stable EBIT operating conditions with 0.8 A of electron beam have been established. The design of the electron gun is presented together with calculated and measured perveance data. In order to assess the experimental compression of the electron beam, a pinhole CCD camera has been set up to measure the electron beam radius. The camera observes X-rays emitted from highly charged ions, excited by the electron beam. Initial tests with this camera setup will be presented. They indicate that a current density of 640 A/cm(2) has been reached when the EBIT magnet was operated at 4 T.

A high-current electron gun for the electron beam ion trap at the National Superconducting Cyclotron Laboratory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schwarz, S., E-mail: schwarz@nscl.msu.edu; Baumann, T. M.; Kittimanapun, K.

The Electron Beam Ion Trap (EBIT) in NSCL’s reaccelerator ReA uses continuous ion injection and accumulation. In order to maximize capture efficiency and minimize breeding time into high charge states, the EBIT requires a high-current/high current-density electron beam. A new electron gun insert based on a concave Ba-dispenser cathode has been designed and built to increase the current transmitted through the EBIT’s superconducting magnet. With the new insert, stable EBIT operating conditions with 0.8 A of electron beam have been established. The design of the electron gun is presented together with calculated and measured perveance data. In order to assessmore » the experimental compression of the electron beam, a pinhole CCD camera has been set up to measure the electron beam radius. The camera observes X-rays emitted from highly charged ions, excited by the electron beam. Initial tests with this camera setup will be presented. They indicate that a current density of 640 A/cm{sup 2} has been reached when the EBIT magnet was operated at 4 T.« less

Effects of emission layer doping on the spatial distribution of charge and host recombination rate density in organic light emitting devices: A numerical study

NASA Astrophysics Data System (ADS)

Li, Yanli; Zhou, Maoqing; Zheng, Tingcai; Yao, Bo; Peng, Yingquan

2013-12-01

Based on drift-diffusion theory, a numerical model of the doping of a single energy level trap in the emission layer of an organic light emitting device (OLED) was developed, and the effects of doping of this single energy level trap on the distribution of the charge density, the recombination rate density, and the electric field in single- and double-layer OLEDs were studied numerically. The results show that by doping the n-type (p-type) emission layer with single energy electron (hole) traps, the distribution of the recombination rate density can be tuned and shifted, which is useful for improvement of the device performance by reduced electrode quenching or for realization of desirable special functions, e.g., emission spectrum tuning in multiple dye-doped white OLEDs.

Trap density of states in small-molecule organic semiconductors: A quantitative comparison of thin-film transistors with single crystals

NASA Astrophysics Data System (ADS)

Kalb, Wolfgang L.; Haas, Simon; Krellner, Cornelius; Mathis, Thomas; Batlogg, Bertram

2010-04-01

We show that it is possible to reach one of the ultimate goals of organic electronics: producing organic field-effect transistors with trap densities as low as in the bulk of single crystals. We studied the spectral density of localized states in the band gap [trap density of states (trap DOS)] of small-molecule organic semiconductors as derived from electrical characteristics of organic field-effect transistors or from space-charge-limited current measurements. This was done by comparing data from a large number of samples including thin-film transistors (TFT’s), single crystal field-effect transistors (SC-FET’s) and bulk samples. The compilation of all data strongly suggests that structural defects associated with grain boundaries are the main cause of “fast” hole traps in TFT’s made with vacuum-evaporated pentacene. For high-performance transistors made with small-molecule semiconductors such as rubrene it is essential to reduce the dipolar disorder caused by water adsorbed on the gate dielectric surface. In samples with very low trap densities, we sometimes observe a steep increase in the trap DOS very close (<0.15eV) to the mobility edge with a characteristic slope of 10-20 meV. It is discussed to what degree band broadening due to the thermal fluctuation of the intermolecular transfer integral is reflected in this steep increase in the trap DOS. Moreover, we show that the trap DOS in TFT’s with small-molecule semiconductors is very similar to the trap DOS in hydrogenated amorphous silicon even though polycrystalline films of small-molecules with van der Waals-type interaction on the one hand are compared with covalently bound amorphous silicon on the other hand.

Identification of microscopic hole-trapping mechanisms in nitride semiconductors

DOE PAGES

John L. Lyons; Krishnaswamy, Karthik; Luke Gordon; ...

2015-12-17

Hole trapping has been observed in nitride heterostructure devices, where the Fermi level is in the vicinity of the valence-band maximum. Using hybrid density functional calculations, we examine microscopic mechanisms for hole trapping in GaN and AlN. In a defect-free material, hole trapping does not spontaneously occur, but trapping can occur in the vicinity of impurities, such as C-a common unintentional impurity in nitrides. As a result, using Schrodinger-Poisson simulations, we assess the effects of C-derived hole traps on N-face high-electron mobility transistors, which we find to be more detrimental than the previously proposed interface traps.

Interfacial dynamic surface traps of lead sulfide (PbS) nanocrystals: test-platform for interfacial charge carrier traps at the organic/inorganic functional interface

NASA Astrophysics Data System (ADS)

Kim, Youngjun; Ko, Hyungduk; Park, Byoungnam

2018-04-01

Nanocrystal (NC) size and ligand dependent dynamic trap formation of lead sulfide (PbS) NCs in contact with an organic semiconductor were investigated using a pentacene/PbS field effect transistor (FET). We used a bilayer pentacene/PbS FET to extract information of the surface traps of PbS NCs at the pentacene/PbS interface through the field effect-induced charge carrier density measurement in the threshold and subthreshold regions. PbS size and ligand dependent trap properties were elucidated by the time domain and threshold voltage measurements in which threshold voltage shift occurs by carrier charging and discharging in the trap states of PbS NCs. The observed threshold voltage shift is interpreted in context of electron trapping through dynamic trap formation associated with PbS NCs. To the best of our knowledge, this is the first demonstration of the presence of interfacial dynamic trap density of PbS NC in contact with an organic semiconductor (pentacene). We found that the dynamic trap density of the PbS NC is size dependent and the carrier residence time in the specific trap sites is more sensitive to NC size variation than to NC ligand exchange. The probing method presented in the study offers a means to investigate the interfacial surface traps at the organic-inorganic hetero-junction, otherwise understanding of the buried surface traps at the functional interface would be elusive.

Intrinsic charge trapping in amorphous oxide films: status and challenges

NASA Astrophysics Data System (ADS)

Strand, Jack; Kaviani, Moloud; Gao, David; El-Sayed, Al-Moatasem; Afanas’ev, Valeri V.; Shluger, Alexander L.

2018-06-01

We review the current understanding of intrinsic electron and hole trapping in insulating amorphous oxide films on semiconductor and metal substrates. The experimental and theoretical evidences are provided for the existence of intrinsic deep electron and hole trap states stemming from the disorder of amorphous metal oxide networks. We start from presenting the results for amorphous (a) HfO2, chosen due to the availability of highest purity amorphous films, which is vital for studying their intrinsic electronic properties. Exhaustive photo-depopulation spectroscopy measurements and theoretical calculations using density functional theory shed light on the atomic nature of electronic gap states responsible for deep electron trapping observed in a-HfO2. We review theoretical methods used for creating models of amorphous structures and electronic structure calculations of amorphous oxides and outline some of the challenges in modeling defects in amorphous materials. We then discuss theoretical models of electron polarons and bi-polarons in a-HfO2 and demonstrate that these intrinsic states originate from low-coordinated ions and elongated metal-oxygen bonds in the amorphous oxide network. Similarly, holes can be captured at under-coordinated O sites. We then discuss electron and hole trapping in other amorphous oxides, such as a-SiO2, a-Al2O3, a-TiO2. We propose that the presence of low-coordinated ions in amorphous oxides with electron states of significant p and d character near the conduction band minimum can lead to electron trapping and that deep hole trapping should be common to all amorphous oxides. Finally, we demonstrate that bi-electron trapping in a-HfO2 and a-SiO2 weakens Hf(Si)–O bonds and significantly reduces barriers for forming Frenkel defects, neutral O vacancies and O2‑ ions in these materials. These results should be useful for better understanding of electronic properties and structural evolution of thin amorphous films under carrier injection conditions.

Pronounced photogating effect in atomically thin WSe2 with a self-limiting surface oxide layer

NASA Astrophysics Data System (ADS)

Yamamoto, Mahito; Ueno, Keiji; Tsukagoshi, Kazuhito

2018-04-01

The photogating effect is a photocurrent generation mechanism that leads to marked responsivity in two-dimensional (2D) semiconductor-based devices. A key step to promote the photogating effect in a 2D semiconductor is to integrate it with a high density of charge traps. Here, we show that self-limiting surface oxides on atomically thin WSe2 can serve as effective electron traps to facilitate p-type photogating. By examining the gate-bias-induced threshold voltage shift of a p-type transistor based on single-layer WSe2 with surface oxide, the electron trap density and the trap rate of the oxide are determined to be >1012 cm-2 and >1010 cm-2 s-1, respectively. White-light illumination on an oxide-covered 4-layer WSe2 transistor leads to the generation of photocurrent, the magnitude of which increases with the hole mobility. During illumination, the photocurrent evolves on a timescale of seconds, and a portion of the current persists even after illumination. These observations indicate that the photogenerated electrons are trapped deeply in the surface oxide and effectively gate the underlying WSe2. Owing to the pronounced photogating effect, the responsivity of the oxide-covered WSe2 transistor is observed to exceed 3000 A/W at an incident optical power of 1.1 nW, suggesting the effectiveness of surface oxidation in facilitating the photogating effect in 2D semiconductors.

Structural and electrical properties of AlN layers grown on silicon by reactive RF magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bazlov, N., E-mail: n.bazlov@spbu.ru; Pilipenko, N., E-mail: nelly.pilipenko@gmail.com; Vyvenko, O.

2016-06-17

AlN films of different thicknesses were deposited on n-Si (100) substrates by reactive radio frequency (rf) magnetron sputtering. Dependences of structure and electrical properties on thickness of deposited films were researched. The structures of the films were analyzed with scanning electron microscopy (SEM) and with transmitting electron microscopy (TEM). Electrical properties of the films were investigated on Au-AlN-(n-Si) structures by means of current-voltage (I-V), capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) techniques. Electron microscopy investigations had shown that structure and chemical composition of the films were thickness stratified. Near silicon surface layer was amorphous aluminum oxide one contained trapsmore » of positive charges with concentration of about 4 × 10{sup 18} cm{sup −3}. Upper layers were nanocrystalline ones consisted of both wurzite AlN and cubic AlON nanocrystals. They contained traps both positive and negative charges which were situated within 30 nm distance from silicon surface. Surface densities of these traps were about 10{sup 12} cm{sup −2}. Electron traps with activation energies of (0.2 ÷ 0.4) eV and densities of about 10{sup 10} cm{sup −2} were revealed on interface between aluminum oxide layer and silicon substrate. Their densities varied weakly with the film thickness.« less

C70/C70:pentacene/pentacene organic heterojunction as the connecting layer for high performance tandem organic light-emitting diodes: Mechanism investigation of electron injection and transport

NASA Astrophysics Data System (ADS)

Guo, Qingxun; Yang, Dezhi; Chen, Jiangshan; Qiao, Xianfeng; Ahamad, Tansir; Alshehri, Saad M.; Ma, Dongge

2017-03-01

A high performance tandem organic light-emitting diode (OLED) is realized by employing a C70/C70:pentacene/pentacene organic heterojunction as the efficient charge generation layer (CGL). Not only more than two time enhancement of external quantum efficiency but also significant improvement in both power efficiency and lifetime are well achieved. The mechanism investigations find that the electron injection from the CGL to the adjacent electron transport layer (ETL) in tandem devices is injection rate-limited due to the high interface energy barrier between the CGL and the ETL. By the capacitance-frequency (C-F) and low temperature current density-voltage (J-V) characteristic analysis, we confirm that the electron transport is a space-charge-limited current process with exponential trap distribution. These traps are localized states below the lowest unoccupied molecular orbital edge inside the gap and would be filled with the upward shift of the Fermi level during the n-doping process. Furthermore, both the trap density (Ht) and the activation energy (Ea) could be carefully worked out through low temperature J-V measurements, which is very important for developing high performance tandem OLEDs.

Reduction in interface defect density in p-BaSi2/n-Si heterojunction solar cells by a modified pretreatment of the Si substrate

NASA Astrophysics Data System (ADS)

Yamashita, Yudai; Yachi, Suguru; Takabe, Ryota; Sato, Takuma; Emha Bayu, Miftahullatif; Toko, Kaoru; Suemasu, Takashi

2018-02-01

We have investigated defects that occurred at the interface of p-BaSi2/n-Si heterojunction solar cells that were fabricated by molecular beam epitaxy. X-ray diffraction measurements indicated that BaSi2 (a-axis-oriented) was subjected to in-plane compressive strain, which relaxed when the thickness of the p-BaSi2 layer exceeded 50 nm. Additionally, transmission electron microscopy revealed defects in the Si layer near steps that were present on the Si(111) substrate. Deep level transient spectroscopy revealed two different electron traps in the n-Si layer that were located at 0.33 eV (E1) and 0.19 eV (E2) below the conduction band edge. The densities of E1 and E2 levels in the region close to the heterointerface were approximately 1014 cm-3. The density of these electron traps decreased below the limits of detection following Si pretreatment to remove the oxide layers from the n-Si substrate, which involved heating the substrate to 800 °C for 30 min under ultrahigh vacuum while depositing a layer of Si (1 nm). The remaining traps in the n-Si layer were hole traps located at 0.65 eV (H1) and 0.38 eV (H2) above the valence band edge. Their densities were as low as 1010 cm-3. Following pretreatment, the current versus voltage characteristics of the p-BaSi2/n-Si solar cells under AM1.5 illumination were reproducible with conversion efficiencies beyond 5% when using a p-BaSi2 layer thickness of 100 nm. The origin of the H2 level is discussed.

Floating potential of emitting surfaces in plasmas with respect to the space potential

DOE PAGES

Kraus, B. F.; Raitses, Y.

2018-03-19

The potential difference between a floating emitting surface and the plasma surrounding it has been described by several sheath models, including the space-charge-limited sheath, the electron sheath with high emission current, and the inverse sheath produced by charge-exchange ion trapping. Our measurements reveal that each of these models has its own regime of validity. We determine the potential of an emissive filament relative to the plasma potential, emphasizing variations in emitted current density and neutral particle density. The potential of a filament in a diffuse plasma is first shown to vanish, consistent with the electron sheath model and increasing electronmore » emission. In a denser plasma with ample neutral pressure, the floating filament potential is positive, as predicted by a derived ion trapping condition. In conclusion, the filament floated negatively in a third plasma, where flowing ions and electrons and nonnegligible electric fields may have disrupted ion trapping. Depending on the regime chosen, emitting surfaces can float positively or negatively with respect to the plasma potential.« less

Floating potential of emitting surfaces in plasmas with respect to the space potential

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kraus, B. F.; Raitses, Y.

The potential difference between a floating emitting surface and the plasma surrounding it has been described by several sheath models, including the space-charge-limited sheath, the electron sheath with high emission current, and the inverse sheath produced by charge-exchange ion trapping. Our measurements reveal that each of these models has its own regime of validity. We determine the potential of an emissive filament relative to the plasma potential, emphasizing variations in emitted current density and neutral particle density. The potential of a filament in a diffuse plasma is first shown to vanish, consistent with the electron sheath model and increasing electronmore » emission. In a denser plasma with ample neutral pressure, the floating filament potential is positive, as predicted by a derived ion trapping condition. In conclusion, the filament floated negatively in a third plasma, where flowing ions and electrons and nonnegligible electric fields may have disrupted ion trapping. Depending on the regime chosen, emitting surfaces can float positively or negatively with respect to the plasma potential.« less

All-optical atom trap as a target for MOTRIMS-like collision experiments

NASA Astrophysics Data System (ADS)

Sharma, S.; Acharya, B. P.; De Silva, A. H. N. C.; Parris, N. W.; Ramsey, B. J.; Romans, K. L.; Dorn, A.; de Jesus, V. L. B.; Fischer, D.

2018-04-01

Momentum-resolved scattering experiments with laser-cooled atomic targets have been performed since almost two decades with magneto-optical trap recoil ion momentum spectroscopy (MOTRIMS) setups. Compared to experiments with gas-jet targets, MOTRIMS features significantly lower target temperatures allowing for an excellent recoil ion momentum resolution. However, the coincident and momentum-resolved detection of electrons was long rendered impossible due to incompatible magnetic field requirements. Here we report on an experimental approach which is based on an all-optical 6Li atom trap that—in contrast to magneto-optical traps—does not require magnetic field gradients in the trapping region. Atom temperatures of about 2 mK and number densities up to 109 cm-3 make this trap ideally suited for momentum-resolved electron-ion coincidence experiments. The overall configuration of the trap is very similar to conventional magneto-optical traps. It mainly requires small modifications of laser beam geometries and polarization which makes it easily implementable in other existing MOTRIMS experiments.

Real-Space Mapping of Surface Trap States in CIGSe Nanocrystals Using 4D Electron Microscopy.

PubMed

Bose, Riya; Bera, Ashok; Parida, Manas R; Adhikari, Aniruddha; Shaheen, Basamat S; Alarousu, Erkki; Sun, Jingya; Wu, Tom; Bakr, Osman M; Mohammed, Omar F

2016-07-13

Surface trap states in copper indium gallium selenide semiconductor nanocrystals (NCs), which serve as undesirable channels for nonradiative carrier recombination, remain a great challenge impeding the development of solar and optoelectronics devices based on these NCs. In order to design efficient passivation techniques to minimize these trap states, a precise knowledge about the charge carrier dynamics on the NCs surface is essential. However, selective mapping of surface traps requires capabilities beyond the reach of conventional laser spectroscopy and static electron microscopy; it can only be accessed by using a one-of-a-kind, second-generation four-dimensional scanning ultrafast electron microscope (4D S-UEM) with subpicosecond temporal and nanometer spatial resolutions. Here, we precisely map the collective surface charge carrier dynamics of copper indium gallium selenide NCs as a function of the surface trap states before and after surface passivation in real space and time using S-UEM. The time-resolved snapshots clearly demonstrate that the density of the trap states is significantly reduced after zinc sulfide (ZnS) shelling. Furthermore, the removal of trap states and elongation of carrier lifetime are confirmed by the increased photocurrent of the self-biased photodetector fabricated using the shelled NCs.

Model for the Operation of a Monolayer MoS2 Thin-Film Transistor with Charges Trapped near the Channel Interface

NASA Astrophysics Data System (ADS)

Hur, Ji-Hyun; Park, Junghak; Kim, Deok-kee; Jeon, Sanghun

2017-04-01

We propose a model that describes the operation characteristics of a two-dimensional electron gas (2DEG) in a monolayer transition-metal dichalcogenide thin-film transistor (TFT) having trapped charges near the channel interface. We calculate the drift mobility of the carriers scattered by charged defects located in the channel or near the channel interfaces. The calculated drift mobility is a function of the 2DEG areal density of interface traps. Finally, we calculate the model transfer (ID-VG S ) and output (ID-VS D ) characteristics and verify them by comparing with the experimental results performed with monolayer MoS2 TFTs. We find the modeled results to be excellently consistent with the experiments. This proposed model can be utilized for measuring the interface-trapped charge and trap site densities from the measured transfer curves directly, avoiding more complicated and expensive measurement methods.

ICFA Beam Dynamics Newsletter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pikin, A.

2017-11-21

Electron beam ion sources technology made significant progress since 1968 when this method of producing highly charged ions in a potential trap within electron beam was proposed by E. Donets. Better understanding of physical processes in EBIS, technological advances and better simulation tools determined significant progress in key EBIS parameters: electron beam current and current density, ion trap capacity, attainable charge states. Greatly increased the scope of EBIS and EBIT applications. An attempt is made to compile some of EBIS engineering problems and solutions and to demonstrate a present stage of understanding the processes and approaches to build a bettermore » EBIS.« less

Non-contact, non-destructive, quantitative probing of interfacial trap sites for charge carrier transport at semiconductor-insulator boundary

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choi, Wookjin; Miyakai, Tomoyo; Sakurai, Tsuneaki

The density of traps at semiconductor–insulator interfaces was successfully estimated using microwave dielectric loss spectroscopy with model thin-film organic field-effect transistors. The non-contact, non-destructive analysis technique is referred to as field-induced time-resolved microwave conductivity (FI-TRMC) at interfaces. Kinetic traces of FI-TRMC transients clearly distinguished the mobile charge carriers at the interfaces from the immobile charges trapped at defects, allowing both the mobility of charge carriers and the number density of trap sites to be determined at the semiconductor-insulator interfaces. The number density of defects at the interface between evaporated pentacene on a poly(methylmethacrylate) insulating layer was determined to be 10{supmore » 12 }cm{sup −2}, and the hole mobility was up to 6.5 cm{sup 2} V{sup −1} s{sup −1} after filling the defects with trapped carriers. The FI-TRMC at interfaces technique has the potential to provide rapid screening for the assessment of interfacial electronic states in a variety of semiconductor devices.« less

Large dielectric constant, high acceptor density, and deep electron traps in perovskite solar cell material CsGeI 3

DOE PAGES

Ming, Wenmei; Shi, Hongliang; Du, Mao-Hua

2016-01-01

Here we report that many metal halides that contain cations with the ns 2 electronic configuration have recently been discovered as high-performance optoelectronic materials. In particular, solar cells based on lead halide perovskites have shown great promise as evidenced by the rapid increase of the power conversion efficiency. In this paper, we show density functional theory calculations of electronic structure and dielectric and defect properties of CsGeI 3 (a lead-free halide perovskite material). The potential of CsGeI 3 as a solar cell material is assessed based on its intrinsic properties. We find anomalously large Born effective charges and a largemore » static dielectric constant dominated by lattice polarization, which should reduce carrier scattering, trapping, and recombination by screening charged defects and impurities. Defect calculations show that CsGeI 3 is a p-type semiconductor and its hole density can be modified by varying the chemical potentials of the constituent elements. Despite the reduction of long-range Coulomb attraction by strong screening, the iodine vacancy in CsGeI3 is found to be a deep electron trap due to the short-range potential, i.e., strong Ge–Ge covalent bonding, which should limit electron transport efficiency in p-type CsGeI 3. This is in contrast to the shallow iodine vacancies found in several Pb and Sn halide perovskites (e.g., CH 3NH 3PbI 3, CH 3NH 3SnI 3, and CsSnI 3). The low-hole-density CsGeI 3 may be a useful solar absorber material but the presence of the low-energy deep iodine vacancy may significantly reduce the open circuit voltage of the solar cell. Still, on the other hand, CsGeI 3 may be used as an efficient hole transport material in solar cells due to its small hole effective mass, the absence of low-energy deep hole traps, and the favorable band offset with solar absorber materials such as dye molecules and CH 3NH 3PbI 3.« less

Deep levels in as-grown and electron-irradiated n-type GaN studied by deep level transient spectroscopy and minority carrier transient spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Duc, Tran Thien; School of Engineering Physics, Hanoi University of Science and Technology, 1 Dai Co Viet Road, Hanoi; Pozina, Galia

2016-03-07

Development of high performance GaN-based devices is strongly dependent on the possibility to control and understand defects in material. Important information about deep level defects is obtained by deep level transient spectroscopy and minority carrier transient spectroscopy on as-grown and electron irradiated n-type bulk GaN with low threading dislocation density produced by halide vapor phase epitaxy. One hole trap labelled H1 (E{sub V} + 0.34 eV) has been detected on as-grown GaN sample. After 2 MeV electron irradiation, the concentration of H1 increases and at fluences higher than 5 × 10{sup 14 }cm{sup −2}, a second hole trap labelled H2 is observed. Simultaneously, the concentration of twomore » electron traps, labelled T1 (E{sub C} – 0.12 eV) and T2 (E{sub C} – 0.23 eV), increases. By studying the increase of the defect concentration versus electron irradiation fluence, the introduction rate of T1 and T2 using 2 MeV- electrons was determined to be 7 × 10{sup −3 }cm{sup −1} and 0.9 cm{sup −1}, respectively. Due to the low introduction rate of T1, it is suggested that the defect is associated with a complex. The high introduction rate of trap H1 and T2 suggests that the defects are associated with primary intrinsic defects or complexes. Some deep levels previously observed in irradiated GaN layers with higher threading dislocation densities are not detected in present investigation. It is therefore suggested that the absent traps may be related to primary defects segregated around dislocations.« less

High-quality electron beams from beam-driven plasma accelerators by wakefield-induced ionization injection.

PubMed

Martinez de la Ossa, A; Grebenyuk, J; Mehrling, T; Schaper, L; Osterhoff, J

2013-12-13

We propose a new and simple strategy for controlled ionization-induced trapping of electrons in a beam-driven plasma accelerator. The presented method directly exploits electric wakefields to ionize electrons from a dopant gas and capture them into a well-defined volume of the accelerating and focusing wake phase, leading to high-quality witness bunches. This injection principle is explained by example of three-dimensional particle-in-cell calculations using the code OSIRIS. In these simulations a high-current-density electron-beam driver excites plasma waves in the blowout regime inside a fully ionized hydrogen plasma of density 5×10(17)cm-3. Within an embedded 100  μm long plasma column contaminated with neutral helium gas, the wakefields trigger ionization, trapping of a defined fraction of the released electrons, and subsequent acceleration. The hereby generated electron beam features a 1.5 kA peak current, 1.5  μm transverse normalized emittance, an uncorrelated energy spread of 0.3% on a GeV-energy scale, and few femtosecond bunch length.

Reliability of gamma-irradiated n-channel ZnO thin-film transistors: electronic and interface properties

NASA Astrophysics Data System (ADS)

Lee, Kin Kiong; Wang, Danna; Shinobu, Onoda; Ohshima, Takeshi

2018-04-01

Radiation-induced charge trapping and interface traps in n-channel ZnO thin film transistors are characterised as a function of total dose and irradiation bias following exposure to gamma-rays. Devices were irradiated up to ∼60 kGy(SiO?) and the electrical characteristic exhibits two distinct regimes. In the first regime, up to a total dose of 40 kGy(SiO?), the threshold voltage increases positively. However, in the second regime with irradiation greater than 40 kGy(SiO?), the threshold voltage moves in the opposite direction. This reversal of threshold voltage is attributed to the influence of the radiation-induced interface and oxide- charge, in which both have opposite polarity, on the electrical performance of the transistors. In the first regime, the generation of the oxide- charge is initially greater than the density of interface traps and caused a positive shift. In the second regime, when the total doses were greater than 40 kGy(SiO?), the radiation-induced interface traps are greater than the density of oxide- charge and caused the threshold voltage to switch direction. Further, the generated interface traps contributed to the degradation of the effective channel mobility, whereas the density of traps at the grain-boundaries did not increase significantly upon irradiation. Isothermal annealing of the devices at 363 K results in a reduction in the trap density and an improvement of the effective channel mobility to ∼90% of its pre-irradiation value.

Nature of electron trap states under inversion at In0.53Ga0.47As/Al2O3 interfaces

NASA Astrophysics Data System (ADS)

Colleoni, Davide; Pourtois, Geoffrey; Pasquarello, Alfredo

2017-03-01

In and Ga impurities substitutional to Al in the oxide layer resulting from diffusion out of the substrate are identified as candidates for electron traps under inversion at In0.53Ga0.47As/Al2O3 interfaces. Through density-functional calculations, these defects are found to be thermodynamically stable in amorphous Al2O3 and to be able to capture two electrons in a dangling bond upon breaking bonds with neighboring O atoms. Through a band alignment based on hybrid functional calculations, it is inferred that the corresponding defect levels lie at ˜1 eV above the conduction band minimum of In0.53Ga0.47As, in agreement with measured defect densities. These results support the technological importance of avoiding cation diffusion into the oxide layer.

Numerical simulation of offset-drain amorphous oxide-based thin-film transistors

NASA Astrophysics Data System (ADS)

Jeong, Jaewook

2016-11-01

In this study, we analyzed the electrical characteristics of amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs) with an offset-drain structure by technology computer aided design (TCAD) simulation. When operating in a linear region, an enhancement-type TFT shows poor field-effect mobility because most conduction electrons are trapped in acceptor-like defects in an offset region when the offset length (L off) exceeds 0.5 µm, whereas a depletion-type TFT shows superior field-effect mobility owing to the high free electron density in the offset region compared with the trapped electron density. When operating in the saturation region, both types of TFTs show good field-effect mobility comparable to that of a reference TFT with a large gate overlap. The underlying physics of the depletion and enhancement types of offset-drain TFTs are systematically analyzed.

Light programmable organic transistor memory device based on hybrid dielectric

NASA Astrophysics Data System (ADS)

Ren, Xiaochen; Chan, Paddy K. L.

2013-09-01

We have fabricated the transistor memory devices based on SiO2 and polystyrene (PS) hybrid dielectric. The trap states densities with different semiconductors have been investigated and a maximum 160V memory window between programming and erasing is realized. For DNTT based transistor, the trapped electron density is limited by the number of mobile electrons in semiconductor. The charge transport mechanism is verified by light induced Vth shift effect. Furthermore, in order to meet the low operating power requirement of portable electronic devices, we fabricated the organic memory transistor based on AlOx/self-assembly monolayer (SAM)/PS hybrid dielectric, the effective capacitance of hybrid dielectric is 210 nF cm-2 and the transistor can reach saturation state at -3V gate bias. The memory window in transfer I-V curve is around 1V under +/-5V programming and erasing bias.

Impact of impurities on zonal flow driven by trapped electron mode turbulence

NASA Astrophysics Data System (ADS)

Guo, Weixin; Wang, Lu; Zhuang, Ge

2017-12-01

The impact of impurities on the generation of zonal flow (ZF) driven by collisonless trapped electron mode turbulence in deuterium (D)-tritium (T) plasmas is investigated. An expression for ZF growth rate with impurities is derived by balancing the ZF potential shielded by polarization effects and the ZF modulated radial turbulent current. Then, it is shown that the maximum normalized ZF growth rate is reduced by the presence of fully ionized non-trace light impurities with relatively flat density profile, and slightly reduced by highly ionized trace tungsten, while the maximum normalized ZF growth rate can be enhanced by fully ionized non-trace light impurities with relatively steep density profile. In particular, the effects of high temperature helium from D-T reaction on ZF depend on the temperature ratio between electrons and high temperature helium. The possible relevance of our findings to recent experimental results and future burning plasmas is also discussed.

On the properties of synchrotron-like X-ray emission from laser wakefield accelerated electron beams

NASA Astrophysics Data System (ADS)

McGuffey, C.; Schumaker, W.; Matsuoka, T.; Chvykov, V.; Dollar, F.; Kalintchenko, G.; Kneip, S.; Najmudin, Z.; Mangles, S. P. D.; Vargas, M.; Yanovsky, V.; Maksimchuk, A.; Thomas, A. G. R.; Krushelnick, K.

2018-04-01

The electric and magnetic fields responsible for electron acceleration in a Laser Wakefield Accelerator (LWFA) also cause electrons to radiate x-ray photons. Such x-ray pulses have several desirable properties including short duration and being well collimated with tunable high energy. We measure the scaling of this x-ray source experimentally up to laser powers greater than 100 TW. An increase in laser power allows electron trapping at a lower density as well as with an increased trapped charge. These effects resulted in an x-ray fluence that was measured to increase non-linearly with laser power. The fluence of x-rays was also compared with that produced from K-α emission resulting from a solid target interaction for the same energy laser pulse. The flux was shown to be comparable, but the LWFA x-rays had a significantly smaller source size. This indicates that such a source may be useful as a backlighter for probing high energy density plasmas with ultrafast temporal resolution.

Quasi-monoenergetic electron acceleration in relativistic laser-plasmas

NASA Astrophysics Data System (ADS)

Pukhov, Alexander; Gordienko, Sergei; Seredov, Vasili; Kostyukov, Igor

2009-03-01

Using Particle-in-Cell simulations as well as analytical theory we study electron acceleration in underdense plasmas both in the Bubble regime and in the weakly relativistic periodic wake fields. In the Bubble regime, electron trapping is taken as a function of the propagated distance. The number of trapped electrons depends on the effective phase velocity of the X-point at the rear of the Bubble. For the weakly relativistic periodic wakes, we show that the phase synchronism between the wake and the relativistic electrons can be maintained over very long distances when the plasma density is tapered properly. Moreover, one can use layered plasmas to control and improve the accelerated beam quality. To cite this article: A. Pukhov et al., C. R. Physique 10 (2009).

Challenges in Optical Emission Spectroscopy

NASA Astrophysics Data System (ADS)

Siepa, Sarah; Berger, Birk; Schulze, Julian; Schuengel, Edmund; von Keudell, Achim

2016-09-01

Collisional-radiative models (CRMs) are widely used to investigate plasma properties such as electron density, electron temperature and the form of the electron energy distribution function. In this work an extensive CRM for argon is presented, which models 30 excited states and various kinds of processes including electron impact excitation/de-excitation, radiation and radiation trapping. The CRM is evaluated in several test cases, i.e. inductively and capacitively coupled plasmas at various pressures, powers/voltages and gas admixtures. Deviations are found between modelled and measured spectra. The escape factor as a means of describing radiation trapping is discussed as well as the cross section data for electron impact processes. This work was supported by the Ruhr University Research School PLUS, funded by Germany's Excellence Initiative [DFG GSC 98/3].

Time-resolved spectroscopy of solid poly/1-vinyl naphthalene/ following electron beam pulse radiolysis - Pulse radiolytic studies on polymers

NASA Technical Reports Server (NTRS)

Coulter, D. R.; Liang, R. H.; Di Stefano, S.; Moacanin, J.; Gupta, A.

1982-01-01

Transient emission studies following pulse radiolysis of solid poly(1-vinyl naphthalene) show existence of excited monomers and two excimers. Quenching experiments indicate that excimers are not formed directly by recombination of ions but probably by trapping of migrating monomeric excitation in preformed traps whose density is approximately one in 1000.

Small polarons and point defects in LaFeO3

NASA Astrophysics Data System (ADS)

Zhu, Zhen; Peelaers, Hartwin; van de Walle, Chris G.

The proton-conductive perovskite-type LaFeO3 is a promising negative-electrode material for Ni/metal-hydride (Ni-MH) batteries. It has a discharge capacity up to 530 mAhg-1 at 333 K, which is significantly higher than commercialized AB5-type alloys. To elucidate the underlying mechanism of this performance, we have investigated the structural and electronic properties of bulk LaFeO3, as well as the effect of point defects, using hybrid density functional methods. LaFeO3 is antiferromagnetic in the ground state with a band gap of 3.54 eV. Small hole and electron polarons can form through self- or point-defect-assisted trapping. We find that La vacancies and Sr substitutional on La sites are shallow acceptors with the induced holes trapped as small polarons, while O and Fe vacancies are deep defect centers. Hydrogen interstitials behave like shallow donors, with the donor electrons localized on nearby iron sites as electron polarons. With a large trapping energy, these polarons can act as electron or hole traps and affect the electrical performance of LaFeO3 as the negative electrode for Ni-MH batteries. We acknowledge DOE for financial support.

Rarefaction shock waves and Hugoniot curve in the presence of free and trapped particles

NASA Astrophysics Data System (ADS)

Niknam, A. R.; Hashemzadeh, M.; Shokri, B.; Rouhani, M. R.

2009-12-01

The effects of the relativistic ponderomotive force and trapped particles in the presence of ponderomotive force on the rarefaction shock waves are investigated. The ponderomotive force alters the electron density distribution. This force and relativistic mass affect the plasma frequency. These physical parameters modify the total pressure and the existence condition of the rarefaction shock wave. Furthermore, the trapping of particles by the high frequency electromagnetic field considerably changes the existence condition of the rarefaction shock wave. The total pressure and Hugoniot curve are obtained by considering the relativistic ponderomotive force and trapped particles.

On a new scenario for the saturation of the low-threshold two-plasmon parametric decay instability of an extraordinary wave in the inhomogeneous plasma of magnetic traps

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gusakov, E. Z., E-mail: Evgeniy.Gusakov@mail.ioffe.ru; Popov, A. Yu., E-mail: a.popov@mail.ioffe.ru; Irzak, M. A., E-mail: irzak@mail.ioffe.ru

The most probable scenario for the saturation of the low-threshold two-plasmon parametric decay instability of an electron cyclotron extraordinary wave has been analyzed. Within this scenario two upperhybrid plasmons at frequencies close to half the pump wave frequency radially trapped in the vicinity of the local maximum of the plasma density profile are excited due to the excitation of primary instability. The primary instability saturation results from the decays of the daughter upper-hybrid waves into secondary upperhybrid waves that are also radially trapped in the vicinity of the local maximum of the plasma density profile and ion Bernstein waves.

Trap density of GeNx/Ge interface fabricated by electron-cyclotron-resonance plasma nitridation

NASA Astrophysics Data System (ADS)

Fukuda, Yukio; Otani, Yohei; Toyota, Hiroshi; Ono, Toshiro

2011-07-01

We have investigated GeNx/Ge interface properties using Si3N4(7 nm)/GeNx(2 nm)/Ge metal-insulator-semiconductor structures fabricated by the plasma nitridation of Ge substrates using an electron-cyclotron-resonance-generated nitrogen plasma. The interface trap density (Dit) measured by the conductance method is found to be distributed symmetrically in the Ge band gap with a minimum Dit value lower than 3 × 1011 cm-2eV-1 near the midgap. This result may lead to the development of processes for the fabrication of p- and n-Ge Schottky-barrier (SB) source/drain metal-insulator-semiconductor field-effect transistors using chemically and thermally robust GeNx dielectrics as interlayers for SB source/drain contacts and high-κ gate dielectrics.

Kinetic features and non-stationary electron trapping in paraxial magnetic nozzles

NASA Astrophysics Data System (ADS)

Sánchez-Arriaga, G.; Zhou, J.; Ahedo, E.; Martínez-Sánchez, M.; Ramos, J. J.

2018-03-01

The paraxial expansion of a collisionless plasma jet into vacuum, guided by a magnetic nozzle, is studied with an Eulerian and non-stationary Vlasov-Poisson solver. Parametric analyzes varying the magnetic field expansion rate, the size of the simulation box, and the electrostatic potential fall are presented. After choosing the potential fall leading to a zero net current beam, the steady states of the simulations exhibit a quasi-neutral region followed by a downstream sheath. The latter, an unavoidable consequence of the finite size of the computational domain, does not affect the quasi-neutral region if the box size is chosen appropriately. The steady state presents a strong decay of the perpendicular temperature of the electrons, whose profile versus the inverse of the magnetic field does not depend on the expansion rate within the quasi-neutral region. As a consequence, the electron distribution function is highly anisotropic downstream. The simulations revealed that the ions reach a higher velocity during the transient than in the steady state and their distribution functions are not far from mono-energetic. The density percentage of the population of electrons trapped during the transient, which is computed self-consistently by the code, is up to 25% of the total electron density in the quasi-neutral region. It is demonstrated that the exact amount depends on the history of the system and the steady state is not unique. Nevertheless, the amount of trapped electrons is smaller than the one assumed heuristically by kinetic stationary theories.

Density and mobility effects of the majority carriers in organic semiconductors under light excitation

NASA Astrophysics Data System (ADS)

Vagenas, N.; Giannopoulou, A.; Kounavis, P.

2015-01-01

This study demonstrates that the effect of light excitation on the density and the mobility of the majority carriers can be explored in organic semiconductors by modulated photocurrent spectroscopy. The spectra of phase and amplitude of the modulated photocurrent of pentacene films indicate a significant increase in the density of the photogenerated mobile holes (majority carriers). This increase is accompanied by a comparatively much smaller increase of the steady state photocurrent response which can be reconciled with a decrease in the mobility (μ) of holes. The decrease of μ is supported from an unusual increase of the Y/μ ratio of the out-of-phase modulated photocurrent (Y) signal to the mobility under light excitation. It is proposed that the mobile holes, which are generated from the dissociation of the light-created excitons more likely near the pentacene-substrate interface by electron trapping, populate grain boundaries charging them and producing a downward band bending. As a result, potential energy barriers are build up which limit the transport of holes interacting through trapping-detrapping with deep partially occupied traps in the charged grain boundaries. On the other hand, the transport of holes interacting through trapping-detrapping with empty traps is found unaffected.

Observations of electron vortex magnetic holes and related wave-particle interactions in the turbulent magnetosheath

NASA Astrophysics Data System (ADS)

Huang, S.; Sahraoui, F.; Yuan, Z.; He, J.; Zhao, J.; Du, J.; Le Contel, O.; Wang, X.; Deng, X.; Fu, H.; Zhou, M.; Shi, Q.; Breuillard, H.; Pang, Y.; Yu, X.; Wang, D.

2017-12-01

Magnetic hole is characterized by a magnetic depression, a density peak, a total electron temperature increase (with a parallel temperature decrease but a perpendicular temperature increase), and strong currents carried by the electrons. The current has a dip in the core region of the magnetic hole and a peak in the outer region of the magnetic hole. There is an enhancement in the perpendicular electron fluxes at 90° pitch angles inside the magnetic hole, implying that the electrons are trapped within it. The variations of the electron velocity components Vem and Ven suggest that an electron vortex is formed by trapping electrons inside the magnetic hole in the circular cross-section. These observations demonstrate the existence of a new type of coherent structures behaving as an electron vortex magnetic hole in turbulent space plasmas as predicted by recent kinetic simulations. We perform a statistically study using high time solution data from the MMS mission. The magnetic holes with short duration (i.e., < 0.5 s) have their cross section smaller than the ion gyro-radius. Superposed epoch analysis of all events reveals that an increase in the electron density and total temperature, significantly increase (resp. decrease) the electron perpendicular (resp. parallel) temperature, and an electron vortex inside the holes. Electron fluxes at 90° pitch angles with selective energies increase in the KSMHs, are trapped inside KSMHs and form the electron vortex due to their collective motion. All these features are consistent with the electron vortex magnetic holes obtained in 2D and 3D particle-in-cell simulations, indicating that the observed the magnetic holes seem to be best explained as electron vortex magnetic holes. It is furthermore shown that the magnetic holes are likely to heat and accelerate the electrons. We also investigate the coupling between whistler waves and electron vortex magnetic holes. These whistler waves can be locally generated inside electron vortex magnetic holes by electron temperature anisotropic instability.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fayolle, M.; Yamaguchi, M.; Ohto, T.

Organic magnetoresistance (OMAR) can be caused by either single carrier (bipolaron) or double carriers (electron-hole)-based mechanisms. In order to consider applications for OMAR, it is important to control the mechanism present in the device. In this paper, we report the effect of traps on OMAR resulting of disorder at the interface between the organic active layer with the hole injection layer [poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate): PEDOT:PSS]. It has been found that while the single carriers OMAR is enhanced by the presence of traps, the double carriers OMAR is totally removed in a sample with a high interface trap density. The reasons formore » these results are discussed based on the impedance spectroscopy measurements. First, the mechanism (single or double carriers) responsible of the OMAR was determined with the support of the capacitance measurement. Then, the influence of traps was discussed with the Nyquist diagrams and phase angle-frequency plots of the samples. The results suggested that with a rough interface and thus high disorder, the presence of traps enhanced the bipolaron formation. Traps also acted as recombination centers for electron-hole pairs, which prevented the double carriers OMAR in devices with a rough interface. On the other hand, with a low trap density, i.e., with a smooth surface, the single carrier OMAR decreased, and double carriers OMAR appeared. The sign of the OMAR could then be controlled by simply sweeping the bias voltage. This work demonstrated that the roughness at the interface is important for controlling OMAR and its reproducibility, and that the combination of OMAR measurement and impedance spectroscopy is helpful for clarifying the processes at the interface.« less

Charge carrier trapping and acoustic phonon modes in single CdTe nanowires.

PubMed

Lo, Shun Shang; Major, Todd A; Petchsang, Nattasamon; Huang, Libai; Kuno, Masaru K; Hartland, Gregory V

2012-06-26

Semiconductor nanostructures produced by wet chemical synthesis are extremely heterogeneous, which makes single particle techniques a useful way to interrogate their properties. In this paper the ultrafast dynamics of single CdTe nanowires are studied by transient absorption microscopy. The wires have lengths of several micrometers and lateral dimensions on the order of 30 nm. The transient absorption traces show very fast decays, which are assigned to charge carrier trapping into surface defects. The time constants vary for different wires due to differences in the energetics and/or density of surface trap sites. Measurements performed at the band edge compared to the near-IR give slightly different time constants, implying that the dynamics for electron and hole trapping are different. The rate of charge carrier trapping was observed to slow down at high carrier densities, which was attributed to trap-state filling. Modulations due to the fundamental and first overtone of the acoustic breathing mode were also observed in the transient absorption traces. The quality factors for these modes were similar to those measured for metal nanostructures, and indicate a complex interaction with the environment.

Physical understanding of trends in current collapse with atomic layer deposited dielectrics in AlGaN/GaN MOS heterojunction FETs

NASA Astrophysics Data System (ADS)

Ramanan, Narayanan; Lee, Bongmook; Misra, Veena

2016-03-01

Many passivation dielectrics are pursued for suppressing current collapse due to trapping/detrapping of access-region surface traps in AlGaN/GaN based metal oxide semiconductor heterojuction field effect transistors (MOS-HFETs). The suppression of current collapse can potentially be achieved either by reducing the interaction of surface traps with the gate via surface leakage current reduction, or by eliminating surface traps that can interact with the gate. But, the latter is undesirable since a high density of surface donor traps is required to sustain a high 2D electron gas density at the AlGaN/GaN heterointerface and provide a low ON-resistance. This presents a practical trade-off wherein a passivation dielectric with the optimal surface trap characteristics and minimal surface leakage is to be chosen. In this work, we compare MOS-HFETs fabricated with popular ALD gate/passivation dielectrics like SiO2, Al2O3, HfO2 and HfAlO along with an additional thick plasma-enhanced chemical vapor deposition SiO2 passivation. It is found that after annealing in N2 at 700 °C, the stack containing ALD HfAlO provides a combination of low surface leakage and a high density of shallow donor traps. Physics-based TCAD simulations confirm that this combination of properties helps quick de-trapping and minimal current collapse along with a low ON resistance.

Fast instability caused by electron cloud in combined function magnets

DOE PAGES

Antipov, S. A.; Adamson, P.; Burov, A.; ...

2017-04-10

One of the factors which may limit the intensity in the Fermilab Recycler is a fast transverse instability. It develops within a hundred turns and, in certain conditions, may lead to a beam loss. The high rate of the instability suggest that its cause is electron cloud. Here, we studied the phenomena by observing the dynamics of stable and unstable beam, simulating numerically the build-up of the electron cloud, and developed an analytical model of an electron cloud driven instability with the electrons trapped in combined function di-poles. We also found that beam motion can be stabilized by a clearingmore » bunch, which confirms the electron cloud nature of the instability. The clearing suggest electron cloud trapping in Recycler combined function mag-nets. Numerical simulations show that up to 1% of the particles can be trapped by the magnetic field. Since the process of electron cloud build-up is exponential, once trapped this amount of electrons significantly increases the density of the cloud on the next revolution. Furthermore, in a Recycler combined function dipole this multi-turn accumulation allows the electron cloud reaching final intensities orders of magnitude greater than in a pure dipole. The estimated resulting instability growth rate of about 30 revolutions and the mode fre-quency of 0.4 MHz are consistent with experimental observations and agree with the simulation in the PEI code. The created instability model allows investigating the beam stability for the future intensity upgrades.« less

Fast instability caused by electron cloud in combined function magnets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Antipov, S. A.; Adamson, P.; Burov, A.

One of the factors which may limit the intensity in the Fermilab Recycler is a fast transverse instability. It develops within a hundred turns and, in certain conditions, may lead to a beam loss. The high rate of the instability suggest that its cause is electron cloud. Here, we studied the phenomena by observing the dynamics of stable and unstable beam, simulating numerically the build-up of the electron cloud, and developed an analytical model of an electron cloud driven instability with the electrons trapped in combined function di-poles. We also found that beam motion can be stabilized by a clearingmore » bunch, which confirms the electron cloud nature of the instability. The clearing suggest electron cloud trapping in Recycler combined function mag-nets. Numerical simulations show that up to 1% of the particles can be trapped by the magnetic field. Since the process of electron cloud build-up is exponential, once trapped this amount of electrons significantly increases the density of the cloud on the next revolution. Furthermore, in a Recycler combined function dipole this multi-turn accumulation allows the electron cloud reaching final intensities orders of magnitude greater than in a pure dipole. The estimated resulting instability growth rate of about 30 revolutions and the mode fre-quency of 0.4 MHz are consistent with experimental observations and agree with the simulation in the PEI code. The created instability model allows investigating the beam stability for the future intensity upgrades.« less

The trap DOS in small molecule organic semiconductors: A quantitative comparison of thin-film transistors with single crystals

NASA Astrophysics Data System (ADS)

Kalb, Wolfgang; Haas, Simon; Pernstich, Kurt; Mathis, Thomas; Batlogg, Bertram

2010-03-01

Our study shows that it is possible to reach one of the ultimate goals of organic electronics: organic field-effect transistors can be produced with trap densities as low as in the bulk of single crystals. Several analytical methods to calculate the spectral density of localized states in the band gap (trap DOS) from measured data were used to clarify, if the different methods lead to similar results. We then compared quantitatively trap DOS information from the literature, correcting for differences due to different calculation methods. In the bulk of single crystals the trap DOS is lower by several orders of magnitude than in thin films. The compilation of all data strongly suggests that structural defects at grain boundaries are the main cause of ``fast'' traps in TFT's made with vacuum-evaporated pentacene. For high-performance transistors made with small molecule semiconductors such as rubrene it is essential to reduce the dipolar disorder caused by water adsorbed on the gate dielectric. We will discuss to what degree band broadening due to the thermal fluctuations of the intermolecular transfer integral is reflected in the trap DOS very close (<0.15 eV) to the mobility edge.

Testing the Model of Oscillating Magnetic Traps

NASA Astrophysics Data System (ADS)

Szaforz, Ż.; Tomczak, M.

2015-01-01

The aim of this paper is to test the model of oscillating magnetic traps (the OMT model), proposed by Jakimiec and Tomczak ( Solar Phys. 261, 233, 2010). This model describes the process of excitation of quasi-periodic pulsations (QPPs) observed during solar flares. In the OMT model energetic electrons are accelerated within a triangular, cusp-like structure situated between the reconnection point and the top of a flare loop as seen in soft X-rays. We analyzed QPPs in hard X-ray light curves for 23 flares as observed by Yohkoh. Three independent methods were used. We also used hard X-ray images to localize magnetic traps and soft X-ray images to diagnose thermal plasmas inside the traps. We found that the majority of the observed pulsation periods correlates with the diameters of oscillating magnetic traps, as was predicted by the OMT model. We also found that the electron number density of plasma inside the magnetic traps in the time of pulsation disappearance is strongly connected with the pulsation period. We conclude that the observations are consistent with the predictions of the OMT model for the analyzed set of flares.

Fast Transverse Beam Instability Caused by Electron Cloud Trapped in Combined Function Magnets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Antipov, Sergey

Electron cloud instabilities affect the performance of many circular high-intensity particle accelerators. They usually have a fast growth rate and might lead to an increase of the transverse emittance and beam loss. A peculiar example of such an instability is observed in the Fermilab Recycler proton storage ring. Although this instability might pose a challenge for future intensity upgrades, its nature had not been completely understood. The phenomena has been studied experimentally by comparing the dynamics of stable and unstable beam, numerically by simulating the build-up of the electron cloud and its interaction with the beam, and analytically by constructing a model of an electron cloud driven instability with the electrons trapped in combined function dipoles. Stabilization of the beam by a clearing bunch reveals that the instability is caused by the electron cloud, trapped in beam optics magnets. Measurements of microwave propagation confirm the presence of the cloud in the combined function dipoles. Numerical simulations show that up to 10more » $$^{-2}$$ of the particles can be trapped by their magnetic field. Since the process of electron cloud build-up is exponential, once trapped this amount of electrons significantly increases the density of the cloud on the next revolution. In a combined function dipole this multi-turn accumulation allows the electron cloud reaching final intensities orders of magnitude greater than in a pure dipole. The estimated fast instability growth rate of about 30 revolutions and low mode frequency of 0.4 MHz are consistent with experimental observations and agree with the simulations. The created instability model allows investigating the beam stability for the future intensity upgrades.« less

Dynamics of the Trapped Electron Phase Space Density in Relation to the Wave Activity in the Inner Magnetosphere

NASA Astrophysics Data System (ADS)

Vassiliadis, D.; Green, J.

2008-05-01

The phase space density fe of the radiation belt electron population is reconstructed based on measurements made by POLAR/HIST. The density peaks in invariant space (mu, K, L*) are shown to be responding to changes in the solar wind velocity and density, and the interplanetary magnetic field. We have associated specific types of storms with the appearance of peaks thereby producing a climatology of fe. We will report on comparing the phase space density changes during these storms to the ULF wave power in the inner magnetosphere remote- sensed by the IMAGE magnetometer array and related properties of the wave environment.

Influence of energy band alignment in mixed crystalline TiO2 nanotube arrays: good for photocatalysis, bad for electron transfer

NASA Astrophysics Data System (ADS)

Mohammadpour, Raheleh

2017-12-01

Despite the wide application ranges of TiO2, the precise explanation of the charge transport dynamic through a mixed crystal phase of this semiconductor has remained elusive. Here, in this research, mixed-phase TiO2 nanotube arrays (TNTAs) consisting of anatase and 0-15% rutile phases has been formed through various annealing processes and employed as a photoelectrode of a photovoltaic cell. Wide ranges of optoelectronic experiments have been employed to explore the band alignment position, as well as the depth and density of trap states in TNTAs. Short circuit potential, as well as open circuit potential measurements specified that the band alignment of more than 0.2 eV exists between the anatase and rutile phase Fermi levels, with a higher electron affinity for anatase; this can result in a potential barrier in crystallite interfaces and the deterioration of electron mobility through mixed phase structures. Moreover, a higher density of shallow localized trap states below the conduction band with more depth (133 meV in anatase to 247 meV in 15% rutile phase) and also deep oxygen vacancy traps have been explored upon introducing the rutile phase. Based on our results, employing TiO2 nanotubes as just the electron transport medium in mixed crystalline phases can deteriorate the charge transport mechanism, however, in photocatalytic applications when both electrons and holes are present, a robust charge separation in crystalline anatase/rutile interphases will result in better performances.

Experiments on Electron-Plasma Vortex Motion Driven by a Background Vorticity Gradient.

NASA Astrophysics Data System (ADS)

Kabantsev, A. A.; Driscoll, C. F.

2000-10-01

The interaction of self-trapped vortices with a background vorticity gradient plays an important role in 2D hydrodynamics, including various aspects of relaxation and self-organization of 2D turbulence. In the present experiments, electron plasma columns with monotonically decreasing density profiles provide a vorticity background with (negative) shear in the rotational flow. Clumps of extra electrons are then retrograde vortices, rotating against the background shear; and regions with a deficit of electrons (holes) are prograde vortices. Theory predicts that clumps move up the background gradient, and holes move down the gradient, with velocities which depend differently on the ratio of the vortex trapping length to vortex radius, l / r_v. The present experiments show quantitative agreement with recent theory and simulations,(D.A. Schecter and D.H.E. Dubin, Phys. Rev. Lett. 83), 2191 (1999). for the accessible regime of 0.2 < l/rv < 2. The experiments also show that moving clumps leave a spiral density wake, and that instability of these wakes results in a large number of long-lived holes.

Role of Hole Trap Sites in MoS2 for Inconsistency in Optical and Electrical Phenomena.

PubMed

Tran, Minh Dao; Kim, Ji-Hee; Kim, Hyun; Doan, Manh Ha; Duong, Dinh Loc; Lee, Young Hee

2018-03-28

Because of strong Coulomb interaction in two-dimensional van der Waals-layered materials, the trap charges at the interface strongly influence the scattering of the majority carriers and thus often degrade their electrical properties. However, the photogenerated minority carriers can be trapped at the interface, modulate the electron-hole recombination, and eventually influence the optical properties. In this study, we report the role of the hole trap sites on the inconsistency in the electrical and optical phenomena between two systems with different interfacial trap densities, which are monolayer MoS 2 -based field-effect transistors (FETs) on hexagonal boron nitride (h-BN) and SiO 2 substrates. Electronic transport measurements indicate that the use of h-BN as a gate insulator can induce a higher n-doping concentration of the monolayer MoS 2 by suppressing the free-electron transfer from the intrinsically n-doped MoS 2 to the SiO 2 gate insulator. Nevertheless, optical measurements show that the electron concentration in MoS 2 /SiO 2 is heavier than that in MoS 2 /h-BN, manifested by the relative red shift of the A 1g Raman peak. The inconsistency in the evaluation of the electron concentration in MoS 2 by electrical and optical measurements is explained by the trapping of the photogenerated holes in the spatially modulated valence band edge of the monolayer MoS 2 caused by the local strain from the SiO 2 /Si substrate. This photoinduced electron doping in MoS 2 /SiO 2 is further confirmed by the development of the trion component in the power-dependent photoluminescence spectra and negative shift of the threshold voltage of the FET after illumination.

Investigation of Oxygen and Hydrogen Associated Charge Trapping and Electrical Characteristics of Silicon Nitride Films for Mnos Devices.

NASA Astrophysics Data System (ADS)

Xu, Dan

Silicon nitride (Si_3N _4) and silicon oxynitride (SiO _{rm x}N_ {rm y}) films in the form of metal -nitride-oxide-silicon (MNOS) structures were investigated to determine the correlation between their electrical characteristics and the nature of the chemical bonding so as to provide guidelines for the next generation of nonvolatile memory devices. The photoionization cross section of electron traps in the oxynitride films of MNOS devices were also measured as a function photon energy and oxygen concentration of the silicon oxynitride films. An effective photoionization cross section associated with electron traps was determined to be between 4.9 times 10 ^{-19} cm^2 to 10.8 times 10^ {-19} cm^2 over the photon energy of 2.06 eV to 3.1 eV for silicon oxynitride films containing 7 atomic % to 17 atomic % of oxygen. The interface state density of metal-nitride-oxide -silicon (MNOS) devices was investigated as a function of processing conditions. The interface state density around the midgap of the oxide-silicon interface of the MNOS structures for deposition temperature between 650^ circC to 850^circC increased from 1.1 to 8.2 times 10 ^{11} cm^ {-2}eV^{-1}, for as-deposited silicon nitride films; but decreased from 5.0 to 3.5 times 10^ {11} cm^{-2} eV^{-1}, for films annealed in nitrogen at 900^circC for 60 minutes; and further decreased and remained constant at 1.5 times 10^{11 } cm^{-2}eV ^{-1}, for films which were further annealed in hydrogen at 900^ circC for an additional 60 minutes. The interface state density increase was due to an increase in the loss of hydrogen at the interfacial region and also due to an increase in the thermal stress caused by differences in thermal expansion coefficients of silicon nitride and silicon dioxide films at higher deposition temperatures. The interface state density was subject to two opposing influences; an increase by thermal stress, and a reduction by hydrogen compensation of these states. The photocurrent-voltage (photoI-V) technique in combination with internal photo-electric technique were employed to determine the trapped charge density and its centroid as a function of processing conditions. Results showed that the trapped charge density was of the order of 10^{18} cm ^{-3}. However, the charge trapping density increased about 30% as the atomic percentage of hydrogen decreased from 6 to 2 atomic %.

Surface flashover performance of epoxy resin microcomposites improved by electron beam irradiation

NASA Astrophysics Data System (ADS)

Huang, Yin; Min, Daomin; Li, Shengtao; Li, Zhen; Xie, Dongri; Wang, Xuan; Lin, Shengjun

2017-06-01

The influencing mechanism of electron beam irradiation on surface flashover of epoxy resin/Al2O3 microcomposite was investigated. Epoxy resin/Al2O3 microcomposite samples with a diameter of 50 mm and a thickness of 1 mm were prepared. The samples were irradiated by electron beam with energies of 10 and 20 keV and a beam current of 5 μA for 5 min. Surface potential decay, surface conduction, and surface flashover properties of untreated and irradiated samples were measured. Both the decay rate of surface potential and surface conductivity decrease with an increase in the energy of electron beam. Meanwhile, surface flashover voltage increase. It was found that both the untreated and irradiated samples have two trap centers, which are labeled as shallow and deep traps. The increase in the energy and density of deep surface traps enhance the ability to capture primary emitted electrons. In addition, the decrease in surface conductivity blocks electron emission at the cathode triple junction. Therefore, electron avalanche at the interface between gas and an insulating material would be suppressed, eventually improving surface flashover voltage of epoxy resin microcomposites.

Formation of high-β plasma and stable confinement of toroidal electron plasma in Ring Trap 1a)

NASA Astrophysics Data System (ADS)

Saitoh, H.; Yoshida, Z.; Morikawa, J.; Furukawa, M.; Yano, Y.; Kawai, Y.; Kobayashi, M.; Vogel, G.; Mikami, H.

2011-05-01

Formation of high-β electron cyclotron resonance heating plasma and stable confinement of pure electron plasma have been realized in the Ring Trap 1 device, a magnetospheric configuration generated by a levitated dipole field magnet. The effects of coil levitation resulted in drastic improvements of the confinement properties, and the maximum local β value has exceeded 70%. Hot electrons are major component of electron populations, and its particle confinement time is 0.5 s. Plasma has a peaked density profile in strong field region [H. Saitoh et al., 23rd IAEA Fusion Energy Conference EXC/9-4Rb (2010)]. In pure electron plasma experiment, inward particle diffusion is realized, and electrons are stably trapped for more than 300 s. When the plasma is in turbulent state during beam injection, plasma flow has a shear, which activates the diocotron (Kelvin-Helmholtz) instability. The canonical angular momentum of the particle is not conserved in this phase, realizing the radial diffusion of charged particles across closed magnetic surfaces. [Z. Yoshida et al., Phys Rev. Lett. 104, 235004 (2010); H. Saitoh et al., Phys. Plasmas 17, 112111 (2010).].

Interface passivation and trap reduction via hydrogen fluoride for molybdenum disulfide on silicon oxide back-gate transistors

NASA Astrophysics Data System (ADS)

Hu, Yaoqiao; San Yip, Pak; Tang, Chak Wah; Lau, Kei May; Li, Qiang

2018-04-01

Layered semiconductor molybdenum disulfide (MoS2) has recently emerged as a promising material for flexible electronic and optoelectronic devices because of its finite bandgap and high degree of gate control. Here, we report a hydrogen fluoride (HF) passivation technique for improving the carrier mobility and interface quality of chemical vapor deposited monolayer MoS2 on a SiO2/Si substrate. After passivation, the fabricated MoS2 back-gate transistors demonstrate a more than double improvement in average electron mobility, a reduced gate hysteresis gap of 3 V, and a low interface trapped charge density of ˜5.8 × 1011 cm-2. The improvements are attributed to the satisfied interface dangling bonds, thus a reduction of interface trap states and trapped charges. Surface x-ray photoelectron spectroscopy analysis and first-principles simulation were performed to verify the HF passivation effect. The results here highlight the necessity of a MoS2/dielectric passivation strategy and provides a viable route for enhancing the performance of MoS2 nano-electronic devices.

Electron self-injection due to a plasma density downramp and gas ionization in a plasma wakefield accelerator in the blowout regime

NASA Astrophysics Data System (ADS)

Yi, S. A.; D'Avignon, E. C.; Khudik, V.; Shvets, G.

2010-11-01

We study self-injection into a plasma wakefield accelerator (PWFA) in the blowout regime analytically and through particle-in-cell (PIC) simulations. We propose a new injection mechanism into a plasma wakefield accelerator, where growth of the blowout region is enabled through a slow decrease in background plasma density along the direction of propagation. Deepening of the potential well due to this growth causes a reduction of electron Hamiltonian in the co-moving frame. This reduction depends on the shape of the blowout region, its growth rate, and impact parameter of the electron. When the reduction is greater than mc^2 [1,2], the electron becomes trapped inside the bubble. We demonstrate this effect using analytic expressions for the bubble potentials [3], and estimate plasma density gradients, and beam charge and size required for injection. We also apply the injection criterion to electron trapping through gas ionization. This work is supported by the US DOE grants DE-FG02-04ER41321 and DE-FG02-07ER54945. [1] S. Kalmykov, S.A. Yi, V. Khudik, and G. Shvets, Phys. Rev. Lett. 103, 135004 (2009). [2] S.A. Yi, V. Khudik, S. Kalmykov, and G. Shvets, Plasma Phys. Contr. Fus., in press. [3] W. Lu, C. Huang, M. Zhou, M. Tzoufras et al., Phys. Plasmas 13, 056709 (2006).

Review of the High Performance Antiproton Trap (HiPAT) Experiment at the Marshall Space Flight Center

NASA Technical Reports Server (NTRS)

Pearson, J. B.; Sims, Herb; Martin, James; Chakrabarti, Suman; Lewis, Raymond; Fant, Wallace

2003-01-01

The significant energy density of matter-antimatter annihilation is attractive to the designers of future space propulsion systems, with the potential to offer a highly compact source of power. Many propulsion concepts exist that could take advantage of matter-antimatter reactions, and current antiproton production rates are sufficient to support basic proof-of-principle evaluation of technology associated with antimatter- derived propulsion. One enabling technology for such experiments is portable storage of low energy antiprotons, allowing antiprotons to be trapped, stored, and transported for use at an experimental facility. To address this need, the Marshall Space Flight Center's Propulsion Research Center is developing a storage system referred to as the High Performance Antiproton Trap (HiPAT) with a design goal of containing 10(exp 12) particles for up to 18 days. The HiPAT makes use of an electromagnetic system (Penning- Malmberg design) consisting of a 4 Telsa superconductor, high voltage electrode structure, radio frequency (RF) network, and ultra high vacuum system. To evaluate the system normal matter sources (both electron guns and ion sources) are used to generate charged particles. The electron beams ionize gas within the trapping region producing ions in situ, whereas the ion sources produce the particles external to the trapping region and required dynamic capture. A wide range of experiments has been performed examining factors such as ion storage lifetimes, effect of RF energy on storage lifetime, and ability to routinely perform dynamic ion capture. Current efforts have been focused on improving the FW rotating wall system to permit longer storage times and non-destructive diagnostics of stored ions. Typical particle detection is performed by extracting trapped ions from HiPAT and destructively colliding them with a micro-channel plate detector (providing number and energy information). This improved RF system has been used to detect various plasma modes for both electron and ion plasmas in the two traps at MSFC, including axial, cyclotron, and diocotron modes. New diagnostics are also being added to HiPAT to measure the axial density distribution of the trapped cloud to match measured RF plasma modes to plasma conditions.

Scaled experimental investigation of the moderation of auroral cyclotron emissions by background plasma

NASA Astrophysics Data System (ADS)

McConville, S. L.; Speirs, D. C.; Gillespie, K. M.; Phelps, A. D. R.; Cross, A. W.; Koepke, M. E.; Whyte, C. G.; Matheson, K.; Robertson, C. W.; Cairns, R. A.; Vorgul, I.; Bingham, R.; Kellett, B. J.; Ronald, K.

2012-04-01

Scaled laboratory experiments have been conducted at Strathclyde University [1,2] to further the understanding of the naturally occurring generation of Auroral Kilometric Radiation (AKR) in the Earth's polar magnetosphere. At an altitude of around 3200km there exists a region of partial plasma depletion (the auroral density cavity), through which electrons descend towards the Earth's atmosphere and are subject to magnetic compression. Due to conservation of the magnetic moment these electrons sacrifice parallel velocity for perpendicular velocity resulting in a horseshoe shaped distribution in velocity space which is unstable to the cyclotron maser instability [3,4]. The radiation is emitted at frequencies extending down to the local electron cyclotron frequency with a peak in emission at ~300kHz. The wave propagation is in the X-mode with powers ~109W corresponding to radiation efficiencies of 1% of the precipitated electron kinetic energy [5]. The background plasma frequency within the auroral density cavity is approximately 9kHz corresponding to an electron plasma density ~106m-3. Previous laboratory experiments at Strathclyde have studied cyclotron radiation emission from electron beams which have horseshoe shaped velocity distributions. Radiation measurements showed emissions in X-like modes with powers ~20kW and efficiencies ~1-2%, coinciding with both theoretical and numerical predictions [6-9] and magnetospheric studies. To enhance the experimental reproduction of the magnetospheric environment a Penning trap was designed and incorporated into the existing apparatus [10]. The trap was placed in the wave generation region where the magnetic field would be maintained at ~0.21T. The trap allowed a background plasma to be generated and its characteristics were studied using a plasma probe. The plasma had a significant impact on the radiation generated, introducing increasingly sporadic behaviour with increasing density. The power and efficiency of the radiation generated was lower than with no plasma present. Plasma diagnostics established the plasma frequency on the order of 150-300MHz and electron density ranging from ~1014-1015m-3, whilst the cyclotron frequency of the electrons within the Penning trap was 5.87GHz giving fce/fpe ~19-40, comparable to the auroral density cavity. Numerical simulations coinciding with this part of the experimental research program are currently being carried out using the VORPAL code. Details of these simulations will be presented in a separate paper [Speirs et al] at this meeting. McConville SL et al 2008, Plasma Phys. Control. Fusion, 50, 074010 Ronald et al 2011, Plasma Phys. Control. Fusion, 53, 074015 Bingham R and Cairns RA, 2002, Phys. Scr., T98, 160-162 Ergun RE et al, 1998, Geophys. Res. Lett., 25, 2061 Gurnett DA et al, 1974, J. Geophys. Res., 79, 4227-4238 Cairns RA et al, 2011, Phys. Plasmas, 18, 022902 Gillespie KM et al, 2008, Plasma Phys. Control. Fusion, 50, 124038 Speirs et al 2010, Phys. Plasmas, 17, 056501 Vorgul et al 2011, Phys. Plasmas, 18, 056501 McConville SL et al 2011, Plasma Phys. Control. Fusion, 53, 124020

Electrical properties of radio-frequency sputtered HfO2 thin films for advanced CMOS technology

NASA Astrophysics Data System (ADS)

Sarkar, Pranab Kumar; Roy, Asim

2015-08-01

The Hafnium oxide (HfO2) high-k thin films have been deposited by radio frequency (rf) sputtering technique on p-type Si (100) substrate. The thickness, composition and phases of films in relation to annealing temperatures have been investigated by using cross sectional FE-SEM (Field Emission Scanning Electron Microscope) and grazing incidence x-ray diffraction (GI-XRD), respectively. GI-XRD analysis revealed that at annealing temperatures of 350°C, films phases change to crystalline from amorphous. The capacitance-voltage (C-V) and current-voltage (I-V) characteristics of the annealed HfO2 film have been studied employing Al/HfO2/p-Si metal-oxide-semiconductor (MOS) structures. The electrical properties such as dielectric constant, interface trap density and leakage current density have been also extracted from C-V and I-V Measurements. The value of dielectric constant, interface trap density and leakage current density of annealed HfO2 film is obtained as 23,7.57×1011eV-1 cm-2 and 2.7×10-5 Acm-2, respectively. In this work we also reported the influence of post deposition annealing onto the trapping properties of hafnium oxide and optimized conditions under which no charge trapping is observed into the dielectric stack.

Role of bond adaptability in the passivation of colloidal quantum dot solids.

PubMed

Thon, Susanna M; Ip, Alexander H; Voznyy, Oleksandr; Levina, Larissa; Kemp, Kyle W; Carey, Graham H; Masala, Silvia; Sargent, Edward H

2013-09-24

Colloidal quantum dot (CQD) solids are attractive materials for photovoltaic devices due to their low-cost solution-phase processing, high absorption cross sections, and their band gap tunability via the quantum size effect. Recent advances in CQD solar cell performance have relied on new surface passivation strategies. Specifically, cadmium cation passivation of surface chalcogen sites in PbS CQDs has been shown to contribute to lowered trap state densities and improved photovoltaic performance. Here we deploy a generalized solution-phase passivation strategy as a means to improving CQD surface management. We connect the effects of the choice of metal cation on solution-phase surface passivation, film-phase trap density of states, minority carrier mobility, and photovoltaic power conversion efficiency. We show that trap passivation and midgap density of states determine photovoltaic device performance and are strongly influenced by the choice of metal cation. Supported by density functional theory simulations, we propose a model for the role of cations, a picture wherein metals offering the shallowest electron affinities and the greatest adaptability in surface bonding configurations eliminate both deep and shallow traps effectively even in submonolayer amounts. This work illustrates the importance of materials choice in designing a flexible passivation strategy for optimum CQD device performance.

Nonlinear interactions between electromagnetic waves and electron plasma oscillations in quantum plasmas.

PubMed

Shukla, P K; Eliasson, B

2007-08-31

We consider nonlinear interactions between intense circularly polarized electromagnetic (CPEM) waves and electron plasma oscillations (EPOs) in a dense quantum plasma, taking into account the electron density response in the presence of the relativistic ponderomotive force and mass increase in the CPEM wave fields. The dynamics of the CPEM waves and EPOs is governed by the two coupled nonlinear Schrödinger equations and Poisson's equation. The nonlinear equations admit the modulational instability of an intense CPEM pump wave against EPOs, leading to the formation and trapping of localized CPEM wave pipes in the electron density hole that is associated with a positive potential distribution in our dense plasma. The relevance of our investigation to the next generation intense laser-solid density plasma interaction experiments is discussed.

Scattering of magnetic mirror trapped electrons by an Alfven wave

NASA Astrophysics Data System (ADS)

Wang, Y.; Gekelman, W. N.; Pribyl, P.; Papadopoulos, K.; Karavaev, A. V.; Shao, X.; Sharma, A. S.

2010-12-01

Highly energetic particles from large solar flares or other events can be trapped in the Earth’s magnetic mirror field and pose a danger to intricate space satellites. Aiming for artificially de-trapping these particles, an experimental and theoretical study of the interactions of a shear Alfven wave with electrons trapped in a magnetic mirror was performed on the Large Plasma Device (LaPD) at UCLA, with critical parameter ratios matched in the lab plasma to those in space. The experiment was done in a quiescent afterglow plasma with ne≈5×1011cm-3, Te≈0.5eV, B0≈1000G, L=18m, and diameter=60cm. A magnetic mirror was established in LaPD (mirror ratio≈1.5, Lmirror≈3m). An electron population with large v⊥ (E⊥≈1keV) was introduced by microwave heating at upper-hybrid frequency with a 2.45GHz pulsed microwave source at up to 5kW. A shear Alfven wave with arbitrary polarization (fwave≈0.5fci , Bwave/B0≈0.5%) was launched by a Rotating Magnetic Field (RMF) antenna axially 2m away from the center of the mirror. It was observed that the Alfven wave effectively eliminated the trapped electrons. A diagnostic probe was developed for this experiment to measure electrons with large v⊥ in the background plasma. Plasma density and temperature perturbations from the Alfven wave were observed along with electron scattering. Computer simulations tracking single particle motion with wave field are ongoing. In these the Alfven wave’s effect on the electrons pitch angle distribution by a Monte-Carlo method is studied. Planned experiments include upgrading the microwave source for up to 100kW pulses to make electrons with higher transverse energy and longer mirror trapping time. This work is supported by The Office of Naval Research under a MURI award. Work was done at the Basic Plasma Science Facility which is supported by DOE and NSF.

Low defect densities in molecular beam epitaxial GaAs achieved by isoelectronic In doping

NASA Technical Reports Server (NTRS)

Bhattacharya, P. K.; Dhar, S.; Berger, P.; Juang, F.-Y.

1986-01-01

A study has been made of the effects of adding small amounts of In (0.2-1.2 pct) to GaAs grown by molecular beam epitaxy. The density of four electron traps decreases in concentration by an order of magnitude, and the peak intensities of prominent emissions in the excitonic spectra are reduced with increase in In content. Based on the higher surface migration rate of In, compared to Ga, at the growth temperatures it is apparent that the traps and the excitonic transitions are related to point defects. This agrees with earlier observations by Briones and Collins (1982) and Skromme et al. (1985).

Profiles of Ionospheric Storm-enhanced Density during the 17 March 2015 Great Storm

NASA Astrophysics Data System (ADS)

Liu, J.; Wang, W.; Burns, A. G.; Yue, X.; Zhang, S.; Zhang, Y.

2015-12-01

Ionospheric F2 region peak densities (NmF2) are expected to show a positive phase correlation with total electron content (TEC), and electron density is expected to have an anti-correlation with electron temperature near the ionospheric F2 peak. However, we show that, during the 17 March 2015 great storm, TEC and F2 region electron density peak height (hmF2) over Millstone Hill increased, but the F2 region electron density peak (NmF2) decreased significantly during the storm-enhanced density (SED) phase of the storm compared with the quiet-time ionosphere. This SED occurred where there was a negative ionospheric storm near the F2 peak and below it. The weak ionosphere below the F2 peak resulted in much reduced downward heat conduction for the electrons, trapping the heat in the topside. This, in turn, increased the topside scale height, so that, even though electron densities at the F2 peak were depleted, TEC increased in the SED. The depletion in NmF2 was probably caused by an increase in the density of the molecular neutrals, resulting in enhanced recombination. In addition, the storm-time topside ionospheric electron density profile was much closer to diffusive equilibrium than non-storm time profile because of less daytime plasma flow from the ionosphere to the plasmasphere.

The drift-diffusion interpretation of the electron current within the organic semiconductor characterized by the bulk single energy trap level

NASA Astrophysics Data System (ADS)

Cvikl, B.

2010-01-01

The closed solution for the internal electric field and the total charge density derived in the drift-diffusion approximation for the model of a single layer organic semiconductor structure characterized by the bulk shallow single trap-charge energy level is presented. The solutions for two examples of electric field boundary conditions are tested on room temperature current density-voltage data of the electron conducting aluminum/tris(8-hydroxyquinoline aluminum/calcium structure [W. Brütting et al., Synth. Met. 122, 99 (2001)] for which jexp∝Va3.4, within the interval of bias 0.4 V≤Va≤7. In each case investigated the apparent electron mobility determined at given bias is distributed within a given, finite interval of values. The bias dependence of the logarithm of their lower limit, i.e., their minimum values, is found to be in each case, to a good approximation, proportional to the square root of the applied electric field. On account of the bias dependence as incorporated in the minimum value of the apparent electron mobility the spatial distribution of the organic bulk electric field as well as the total charge density turn out to be bias independent. The first case investigated is based on the boundary condition of zero electric field at the electron injection interface. It is shown that for minimum valued apparent mobilities, the strong but finite accumulation of electrons close to the anode is obtained, which characterize the inverted space charge limited current (SCLC) effect. The second example refers to the internal electric field allowing for self-adjustment of its boundary values. The total electron charge density is than found typically to be of U shape, which may, depending on the parameters, peak at both or at either Alq3 boundary. It is this example in which the proper SCLC effect is consequently predicted. In each of the above two cases, the calculations predict the minimum values of the electron apparent mobility, which substantially exceed the corresponding published measurements. For this reason the effect of the drift term alone is additionally investigated. On the basis of the published empirical electron mobilities and the diffusion term revoked, it is shown that the steady state electron current density within the Al/Alq3 (97 nm)/Ca single layer organic structure may well be pictured within the drift-only interpretation of the charge carriers within the Alq3 organic characterized by the single (shallow) trap energy level. In order to arrive at this result, it is necessary that the nonzero electric field, calculated to exist at the electron injecting Alq3/Ca boundary, is to be appropriately accounted for in the computation.

Multicomponent kinetic simulation of Bernstein–Greene–Kruskal modes associated with ion acoustic and dust-ion acoustic excitations in electron-ion and dusty plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hosseini Jenab, S. M., E-mail: mehdi.jenab@yahoo.com; Kourakis, I., E-mail: IoannisKourakisSci@gmail.com

2014-04-15

A series of numerical simulations based on a recurrence-free Vlasov kinetic algorithm presented earlier [Abbasi et al., Phys. Rev. E 84, 036702 (2011)] are reported. Electron-ion plasmas and three-component (electron-ion-dust) dusty, or complex, plasmas are considered, via independent simulations. Considering all plasma components modeled through a kinetic approach, the nonlinear behavior of ionic scale acoustic excitations is investigated. The focus is on Bernstein–Greene–Kruskal (BGK) modes generated during the simulations. In particular, we aim at investigating the parametric dependence of the characteristics of BGK structures, namely of their time periodicity (τ{sub trap}) and their amplitude, on the electron-to-ion temperature ratio andmore » on the dust concentration. In electron-ion plasma, an exponential relation between τ{sub trap} and the amplitude of BGK modes and the electron-to-ion temperature ratio is observed. It is argued that both characteristics, namely, the periodicity τ{sub trap} and amplitude, are also related to the size of the phase-space vortex which is associated with BGK mode creation. In dusty plasmas, BGK modes characteristics appear to depend on the dust particle density linearly.« less

Paramagnetic defects and charge trapping behavior of ZrO2 films deposited on germanium by plasma-enhanced CVD

NASA Astrophysics Data System (ADS)

Mahata, C.; Bera, M. K.; Bose, P. K.; Maiti, C. K.

2009-02-01

Internal photoemission and magnetic resonance studies have been performed to investigate the charge trapping behavior and chemical nature of defects in ultrathin (~14 nm) high-k ZrO2 dielectric films deposited on p-Ge (1 0 0) substrates at low temperature (<200 °C) by plasma-enhanced chemical vapor deposition (PECVD) in a microwave (700 W, 2.45 GHz) plasma at a pressure of ~65 Pa. Both the band and defect-related electron states have been characterized using electron paramagnetic resonance, internal photoemission, capacitance-voltage and current-voltage measurements under UV illumination. Capacitance-voltage and photocurrent-voltage measurements were used to determine the centroid of oxide charge within the high-k gate stack. The observed shifts in photocurrent response of the Al/ZrO2/GeO2/p-Ge metal-insulator-semiconductor (MIS) capacitors indicate the location of the centroids to be within the ZrO2 dielectric near to the gate electrode. Moreover, the measured flat band voltage and photocurrent shifts also indicate a large density of traps in the dielectric. The impact of plasma nitridation on the interfacial quality of the oxides has been investigated. Different N sources, such as NO and NH3, have been used for nitrogen engineering. Oxynitride samples show a lower defect density and trapping over the non-nitrided samples. The charge trapping and detrapping properties of MIS capacitors under stressing in constant current and voltage modes have been investigated in detail.

Effects of magnetic islands on bootstrap current in toroidal plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dong, G.; Lin, Z.

The effects of magnetic islands on electron bootstrap current in toroidal plasmas are studied using gyrokinetic simulations. The magnetic islands cause little changes of the bootstrap current level in the banana regime because of trapped electron effects. In the plateau regime, the bootstrap current is completely suppressed at the island centers due to the destruction of trapped electron orbits by collisions and the flattening of pressure profiles by the islands. In the collisional regime, small but finite bootstrap current can exist inside the islands because of the pressure gradients created by large collisional transport across the islands. Lastly, simulation resultsmore » show that the bootstrap current level increases near the island separatrix due to steeper local density gradients.« less

Effects of magnetic islands on bootstrap current in toroidal plasmas

DOE PAGES

Dong, G.; Lin, Z.

2016-12-19

The effects of magnetic islands on electron bootstrap current in toroidal plasmas are studied using gyrokinetic simulations. The magnetic islands cause little changes of the bootstrap current level in the banana regime because of trapped electron effects. In the plateau regime, the bootstrap current is completely suppressed at the island centers due to the destruction of trapped electron orbits by collisions and the flattening of pressure profiles by the islands. In the collisional regime, small but finite bootstrap current can exist inside the islands because of the pressure gradients created by large collisional transport across the islands. Lastly, simulation resultsmore » show that the bootstrap current level increases near the island separatrix due to steeper local density gradients.« less

An electron beam ion trap and source for re-acceleration of rare-isotope ion beams at TRIUMF

NASA Astrophysics Data System (ADS)

Blessenohl, M. A.; Dobrodey, S.; Warnecke, C.; Rosner, M. K.; Graham, L.; Paul, S.; Baumann, T. M.; Hockenbery, Z.; Hubele, R.; Pfeifer, T.; Ames, F.; Dilling, J.; Crespo López-Urrutia, J. R.

2018-05-01

Electron beam driven ionization can produce highly charged ions (HCIs) in a few well-defined charge states. Ideal conditions for this are maximally focused electron beams and an extremely clean vacuum environment. A cryogenic electron beam ion trap fulfills these prerequisites and delivers very pure HCI beams. The Canadian rare isotope facility with electron beam ion source-electron beam ion sources developed at the Max-Planck-Institut für Kernphysik (MPIK) reaches already for a 5 keV electron beam and a current of 1 A with a density in excess of 5000 A/cm2 by means of a 6 T axial magnetic field. Within the trap, the beam quickly generates a dense HCI population, tightly confined by a space-charge potential of the order of 1 keV times the ionic charge state. Emitting HCI bunches of ≈107 ions at up to 100 Hz repetition rate, the device will charge-breed rare-isotope beams with the mass-over-charge ratio required for re-acceleration at the Advanced Rare IsotopE Laboratory (ARIEL) facility at TRIUMF. We present here its design and results from commissioning runs at MPIK, including X-ray diagnostics of the electron beam and charge-breeding process, as well as ion injection and HCI-extraction measurements.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Babadi, A. S., E-mail: aein.shiri-babadi@eit.lth.se; Lind, E.; Wernersson, L. E.

A qualitative analysis on capacitance-voltage and conductance data for high-κ/InAs capacitors is presented. Our measured data were evaluated with a full equivalent circuit model, including both majority and minority carriers, as well as interface and border traps, formulated for narrow band gap metal-oxide-semiconductor capacitors. By careful determination of interface trap densities, distribution of border traps across the oxide thickness, and taking into account the bulk semiconductor response, it is shown that the trap response has a strong effect on the measured capacitances. Due to the narrow bandgap of InAs, there can be a large surface concentration of electrons and holesmore » even in depletion, so a full charge treatment is necessary.« less

Simulation of Space Charge Dynamic in Polyethylene Under DC Continuous Electrical Stress

NASA Astrophysics Data System (ADS)

Boukhari, Hamed; Rogti, Fatiha

2016-10-01

The space charge dynamic plays a very important role in the aging and breakdown of polymeric insulation materials under high voltage. This is due to the intensification of the local electric field and the attendant chemical-mechanical effects in the vicinity around the trapped charge. In this paper, we have investigated the space charge dynamic in low-density polyethylene under high direct-current voltage, which is evaluated by experimental conditions. The evaluation is on the basis of simulation using a bipolar charge transport model consisting of charge injection, transports, trapping, detrapping, and recombination phenomena. The theoretical formulation of the physical problem is based on the Poisson, the continuity, and the transport equations. Numerical results provide temporal and local distributions of the electric field, the space charge density for the different kinds of charges (net charge density, mobile and trapped of electron density, mobile hole density), conduction and displacement current densities, and the external current. The result shows the appearance of the negative packet-like space charge with a large amount of the bulk under the dc electric field of 100 kV/mm, and the induced distortion of the electric field is largely near to the anode, about 39% higher than the initial electric field applied.

Multibit Polycristalline Silicon-Oxide-Silicon Nitride-Oxide-Silicon Memory Cells with High Density Designed Utilizing a Separated Control Gate

NASA Astrophysics Data System (ADS)

Rok Kim, Kyeong; You, Joo Hyung; Dal Kwack, Kae; Kim, Tae Whan

2010-10-01

Unique multibit NAND polycrystalline silicon-oxide-silicon nitride-oxide-silicon (SONOS) memory cells utilizing a separated control gate (SCG) were designed to increase memory density. The proposed NAND SONOS memory device based on a SCG structure was operated as two bits, resulting in an increase in the storage density of the NVM devices in comparison with conventional single-bit memories. The electrical properties of the SONOS memory cells with a SCG were investigated to clarify the charging effects in the SONOS memory cells. When the program voltage was supplied to each gate of the NAND SONOS flash memory cells, the electrons were trapped in the nitride region of the oxide-nitride-oxide layer under the gate to supply the program voltage. The electrons were accumulated without affecting the other gate during the programming operation, indicating the absence of cross-talk between two trap charge regions. It is expected that the inference effect will be suppressed by the lower program voltage than the program voltage of the conventional NAND flash memory. The simulation results indicate that the proposed unique NAND SONOS memory cells with a SCG can be used to increase memory density.

Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage

NASA Astrophysics Data System (ADS)

Polyakov, A. Y.; Smirnov, N. B.; Shchemerov, I. V.; Yakimov, E. B.; Yang, Jiancheng; Ren, F.; Yang, Gwangseok; Kim, Jihyun; Kuramata, A.; Pearton, S. J.

2018-01-01

Deep electron and hole traps in 10 MeV proton irradiated high-quality β-Ga2O3 films grown by Hydride Vapor Phase Epitaxy (HVPE) on bulk β-Ga2O3 substrates were measured by deep level transient spectroscopy with electrical and optical injection, capacitance-voltage profiling in the dark and under monochromatic irradiation, and also electron beam induced current. Proton irradiation caused the diffusion length of charge carriers to decrease from 350-380 μm in unirradiated samples to 190 μm for a fluence of 1014 cm-2, and this was correlated with an increase in density of hole traps with optical ionization threshold energy near 2.3 eV. These defects most likely determine the recombination lifetime in HVPE β-Ga2O3 epilayers. Electron traps at Ec-0.75 eV and Ec-1.2 eV present in as-grown samples increase in the concentration after irradiation and suggest that these centers involve native point defects.

Observation of warm, higher energy electrons transiting a double layer in a helicon plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sung, Yung-Ta, E-mail: ysung2@wisc.edu; Li, Yan; Scharer, John E.

2015-03-15

Measurements of an inductive RF helicon argon plasma double layer with two temperature electron distributions including a fast (>80 eV) tail are observed at 0.17 mTorr Ar pressure. The fast, untrapped electrons observed downstream of the double layer have a higher temperature (13 eV) than the trapped (T{sub e} = 4 eV) electrons. The reduction of plasma potential and density observed in the double layer region would require an upstream temperature ten times the measured 4 eV if occurring via Boltzmann ambipolar expansion. The experimental observation in Madison helicon experiment indicates that fast electrons with substantial density fractions can be created at low helicon operating pressures.

Evidence for the existence of negative ions in the D and lower E regions at twilight

NASA Technical Reports Server (NTRS)

Kane, J. A.

1972-01-01

Evidence for negative ions in the lower ionosphere is based on the difference between simultaneously measured profiles of electron and positive ion density. The electron density profiles reported were obtained from ground-to-rocket radio wave absorption measurements while Gerdien ion traps were used to measure the positive ion profiles. Results from a series of three rockets launched from Thumba, India near sunset on 27 March, 1970 indicate that a significant number of negative ions are formed at altitudes as high as 95 km at twilight.

Scanning-tunneling microscope imaging of single-electron solitons in a material with incommensurate charge-density waves.

PubMed

Brazovskii, Serguei; Brun, Christophe; Wang, Zhao-Zhong; Monceau, Pierre

2012-03-02

We report on scanning-tunneling microscopy experiments in a charge-density wave (CDW) system allowing visually capturing and studying in detail the individual solitons corresponding to the self-trapping of just one electron. This "Amplitude Soliton" is marked by vanishing of the CDW amplitude and by the π shift of its phase. It might be the realization of the spinon--the long-sought particle (along with the holon) in the study of science of strongly correlated electronic systems. As a distinct feature we also observe one-dimensional Friedel oscillations superimposed on the CDW which develop independently of solitons.

Effect of traps on the charge transport in semiconducting polymer PCDTBT

NASA Astrophysics Data System (ADS)

Khan, Mohd Taukeer; Agrawal, Vikash; Almohammedi, Abdullah; Gupta, Vinay

2018-07-01

Organic semiconductors (OSCs) are nowadays called upon as promising candidates for next generation electronics devices. Due to disorder structure of these materials, a high density of traps are present in their energy band gap which affect the performance of these devices. In the present manuscript, we have investigated the role of traps on charge transport in PCDTBT thin film by measuring the temperature dependent J(V) characteristics in hole only device configuration. The obtained results were analyzed by space charge limited (SCL) conduction model. It has been found that the room temperature J(V) characteristics follow Mott-Gurney square law for trap-free SCL conduction. But below 278 K, the current increases according to trap-filling SCL law with traps distributed exponentially in the band gap of semiconductor. Furthermore, after reaching a crossover voltage of VC ∽ 12 V, all the traps filled by injected carriers and the trap-filling SCL current switch to trap-free SCL current. The hole mobility of trap-free SCL current is about one order higher as compared trap-filling SCL current and remains constant with temperature.

Designing New Materials for Converting Solar Energy to Fuels via Quantum Mechanics

DTIC Science & Technology

2014-07-11

dopants can also be exploited to increase charge carrier concentration without creating traps and hence improve the conductivity of these materials...e.g., Mn(II) in hematite for hole transport, Y(III) in MnO:ZnO for electron transport). • We discovered that dopants derived from covalent oxides...e.g., Si from silica, as a dopant in hematite) can also be used to increase charge carrier density without creating traps. Charge carriers stay

Flux-driven algebraic damping of m = 1 diocotron mode

NASA Astrophysics Data System (ADS)

Chim, Chi Yung; O'Neil, Thomas M.

2016-07-01

Recent experiments with pure electron plasmas in a Malmberg-Penning trap have observed the algebraic damping of m = 1 diocotron modes. Transport due to small field asymmetries produces a low density halo of electrons moving radially outward from the plasma core, and the mode damping begins when the halo reaches the resonant radius r = Rw at the wall of the trap. The damping rate is proportional to the flux of halo particles through the resonant layer. The damping is related to, but distinct from, spatial Landau damping, in which a linear wave-particle resonance produces exponential damping. This paper explains with analytic theory the new algebraic damping due to particle transport by both mobility and diffusion. As electrons are swept around the "cat's eye" orbits of the resonant wave-particle interaction, they form a dipole (m = 1) density distribution. From this distribution, the electric field component perpendicular to the core displacement produces E × B-drift of the core back to the axis, that is, damps the m = 1 mode. The parallel component produces drift in the azimuthal direction, that is, causes a shift in the mode frequency.

Efficient repumping of a Ca magneto-optical trap

NASA Astrophysics Data System (ADS)

Mills, Michael; Puri, Prateek; Yu, Yanmei; Derevianko, Andrei; Schneider, Christian; Hudson, Eric R.

2017-09-01

We investigate the limiting factors in the standard implementation of the Ca magneto-optical trap. We find that intercombination transitions from the 4 s 5 p 1P1 state used to repump the electronic population from the 3 d 4 s 1D2 state severely reduce the trap lifetime. We explore seven alternative repumping schemes theoretically and investigate five of them experimentally. We find that all five of these schemes yield a significant increase in the trap lifetime and consequently improve the number of atoms and peak atom density by as much as ˜20 times and ˜6 times, respectively. One of these transitions, at 453 nm, is shown to approach the fundamental limit for a Ca magneto-optical trap with repumping only from the dark 3 d 4 s 1D2 state, yielding a trap lifetime of ˜5 s.

Electroluminescence from ZnCuInS/ZnS quantum dots/poly(9-vinylcarbazole) multilayer films with different thicknesses of quantum dot layer

NASA Astrophysics Data System (ADS)

Dong, Xiaofei; Xu, Jianping; Shi, Shaobo; Zhang, Xiaosong; Li, Lan; Yin, Shougen

2017-05-01

We report tunable electroluminescence (EL) from solution-processed ZnCuInS/ZnS (ZCIS/ZnS) quantum dots (QDs)/poly(9-vinlycarbazole) multilayer films. The EL spectra exhibit a red shift as the QD layer thickness increases. By analyzing the dependence of the applied voltage and the ZCIS/ZnS QD layer thickness on the EL spectra, the origin of the red shift is associated with the increased trap density of QDs that induces the injected electrons to be trapped in the deep donor level. The current conduction mechanism based on the current density-voltage curves at different voltage regions was discussed.

Leakage current conduction and reliability assessment of passivating thin silicon dioxide films on n-4H-SiC

NASA Astrophysics Data System (ADS)

Samanta, Piyas; Mandal, Krishna C.

2016-09-01

We have analyzed the mechanisms of leakage current conduction in passivating silicon dioxide (SiO2) films grown on (0 0 0 1) silicon (Si) face of n-type 4H-SiC (silicon carbide). It was observed that the experimentally measured gate current density in metal-oxide-silicon carbide (MOSiC) structures under positive gate bias at an oxide field Eox above 5 MV/cm is comprised of Fowler-Nordheim (FN) tunneling of electrons from the accumulated n-4H-SiC and Poole-Frenkel (PF) emission of trapped electrons from the localized neutral traps in the SiO2 gap, IFN and IPF, respectively at temperatures between 27 and 200 °C. In MOSiC structures, PF mechanism dominates FN tunneling of electrons from the accumulation layer of n-4H-SiC due to high density (up to 1013 cm-2) of carbon-related acceptor-like traps located at about 2.5 eV below the SiO2 conduction band (CB). These current conduction mechanisms were taken into account in studying hole injection/trapping into 10 nm-thick tunnel oxide on the Si face of 4H-SiC during electron injection from n-4H-SiC under high-field electrical stress with positive bias on the heavily doped n-type polysilicon (n+-polySi) gate at a wide range of temperatures between 27 and 200 °C. Holes were generated in the n+-polySi anode material by the hot-electrons during their transport through thin oxide films at oxide electric fields Eox from 5.6 to 8.0 MV/cm (prior to the intrinsic oxide breakdown field). Time-to-breakdown tBD of the gate dielectric was found to follow reciprocal field (1/E) model irrespective of stress temperatures. Despite the significant amount of process-induced interfacial electron traps contributing to a large amount of leakage current via PF emission in thermally grown SiO2 on the Si-face of n-4H-SiC, MOSiC devices having a 10 nm-thick SiO2 film can be safely used in 5 V TTL logic circuits over a period of 10 years.

Identical spin rotation effect and electron spin waves in quantum gas of atomic hydrogen

NASA Astrophysics Data System (ADS)

Lehtonen, L.; Vainio, O.; Ahokas, J.; Järvinen, J.; Novotny, S.; Sheludyakov, S.; Suominen, K.-A.; Vasiliev, S.; Khmelenko, V. V.; Lee, D. M.

2018-05-01

We present an experimental study of electron spin waves in atomic hydrogen gas compressed to high densities of ∼5 × 1018 cm‑3 at temperatures ranging from 0.26 to 0.6 K in the strong magnetic field of 4.6 T. Hydrogen gas is in a quantum regime when the thermal de-Broglie wavelength is much larger than the s-wave scattering length. In this regime the identical particle effects play a major role in atomic collisions and lead to the identical spin rotation effect (ISR). We observed a variety of spin wave modes caused by this effect with strong dependence on the magnetic potential caused by variations of the polarizing magnetic field. We demonstrate confinement of the ISR modes in the magnetic potential and manipulate their properties by changing the spatial profile of the magnetic field. We have found that at a high enough density of H gas the magnons accumulate in their ground state in the magnetic trap and exhibit long coherence, which has a profound effect on the electron spin resonance spectra. Such macroscopic accumulation of the ground state occurs at a certain critical density of hydrogen gas, where the chemical potential of the magnons becomes equal to the energy of their ground state in the trapping potential.

Observation of magnetic fluctuations and rapid density decay of magnetospheric plasma in Ring Trap 1

NASA Astrophysics Data System (ADS)

Saitoh, H.; Yoshida, Z.; Morikawa, J.; Yano, Y.; Mikami, H.; Kasaoka, N.; Sakamoto, W.

2012-06-01

The Ring Trap 1 device, a magnetospheric configuration generated by a levitated dipole field magnet, has created high-β (local β ˜ 70%) plasma by using electron cyclotron resonance heating (ECH). When a large population of energetic electrons is generated at low neutral gas pressure operation, high frequency magnetic fluctuations are observed. When the fluctuations are strongly excited, rapid loss of plasma was simultaneously observed especially in a quiet decay phase after the ECH microwave power is turned off. Although the plasma is confined in a strongly inhomogeneous dipole field configuration, the frequency spectra of the fluctuations have sharp frequency peaks, implying spatially localized sources of the fluctuations. The fluctuations are stabilized by decreasing the hot electron component below approximately 40%, realizing stable high-β confinement.

Density-Gradient-Driven trapped-electron-modes in improved-confinement RFP plasmas

NASA Astrophysics Data System (ADS)

Duff, James

2016-10-01

Short wavelength density fluctuations in improved-confinement MST plasmas exhibit multiple features characteristic of the trapped-electron-mode (TEM), strong evidence that drift wave turbulence emerges in RFP plasmas when transport associated with MHD tearing is reduced. Core transport in the RFP is normally governed by magnetic stochasticity stemming from long wavelength tearing modes that arise from current profile peaking. Using inductive control, the tearing modes are reduced and global confinement is increased to values expected for a comparable tokamak plasma. The improved confinement is associated with a large increase in the pressure gradient that can destabilize drift waves. The measured density fluctuations have frequencies >50 kHz, wavenumbers k_phi*rho_s<0.14, and propagate in the electron drift direction. Their spectral emergence coincides with a sharp decrease in fluctuations associated with global tearing modes. Their amplitude increases with the local density gradient, and they exhibit a density-gradient threshold at R/L_n 15, higher than in tokamak plasmas by R/a. the GENE code, modified for RFP equilibria, predicts the onset of microinstability for these strong-gradient plasma conditions. The density-gradient-driven TEM is the dominant instability in the region where the measured density fluctuations are largest, and the experimental threshold-gradient is close to the predicted critical gradient for linear stability. While nonlinear analysis shows a large Dimits shift associated with predicted strong zonal flows, the inclusion of residual magnetic fluctuations causes a collapse of the zonal flows and an increase in the predicted transport to a level close to the experimentally measured heat flux. Similar circumstances could occur in the edge region of tokamak plasmas when resonant magnetic perturbations are applied for the control of ELMs. Work supported by US DOE.

Nonlinear propagation of ion-acoustic waves in electron-positron-ion plasma with trapped electrons

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alinejad, H.; Sobhanian, S.; Mahmoodi, J.

2006-01-15

A theoretical investigation has been made for ion-acoustic waves in an unmagnetized electron-positron-ion plasma. A more realistic situation in which plasma consists of a negatively charged ion fluid, free positrons, and trapped as well as free electrons is considered. The properties of stationary structures are studied by the reductive perturbation method, which is valid for small but finite amplitude limit, and by pseudopotential approach, which is valid for large amplitude. With an appropriate modified form of the electron number density, two new equations for the ion dynamics have been found. When deviations from isothermality are finite, the modified Korteweg-deVries equationmore » has been found, and for the case that deviations from isothermality are small, calculations lead to a generalized Korteweg-deVries equation. It is shown from both weakly and highly nonlinear analysis that the presence of the positrons may allow solitary waves to exist. It is found that the effect of the positron density changes the maximum value of the amplitude and M (Mach number) for which solitary waves can exist. The present theory is applicable to analyze arbitrary amplitude ion-acoustic waves associated with positrons which may occur in space plasma.« less

Kinetic energy offsets for multicharged ions from an electron beam ion source.

PubMed

Kulkarni, D D; Ahl, C D; Shore, A M; Miller, A J; Harriss, J E; Sosolik, C E; Marler, J P

2017-08-01

Using a retarding field analyzer, we have measured offsets between the nominal and measured kinetic energy of multicharged ions extracted from an electron beam ion source (EBIS). By varying source parameters, a shift in ion kinetic energy was attributed to the trapping potential produced by the space charge of the electron beam within the EBIS. The space charge of the electron beam depends on its charge density, which in turn depends on the amount of negative charge (electron beam current) and its velocity (electron beam energy). The electron beam current and electron beam energy were both varied to obtain electron beams of varying space charge and these were related to the observed kinetic energy offsets for Ar 4+ and Ar 8+ ion beams. Knowledge of these offsets is important for studies that seek to utilize slow, i.e., low kinetic energy, multicharged ions to exploit their high potential energies for processes such as surface modification. In addition, we show that these offsets can be utilized to estimate the effective radius of the electron beam inside the trap.

Simulation and optimization of a 10 A electron gun with electrostatic compression for the electron beam ion source.

PubMed

Pikin, A; Beebe, E N; Raparia, D

2013-03-01

Increasing the current density of the electron beam in the ion trap of the Electron Beam Ion Source (EBIS) in BNL's Relativistic Heavy Ion Collider facility would confer several essential benefits. They include increasing the ions' charge states, and therefore, the ions' energy out of the Booster for NASA applications, reducing the influx of residual ions in the ion trap, lowering the average power load on the electron collector, and possibly also reducing the emittance of the extracted ion beam. Here, we discuss our findings from a computer simulation of an electron gun with electrostatic compression for electron current up to 10 A that can deliver a high-current-density electron beam for EBIS. The magnetic field in the cathode-anode gap is formed with a magnetic shield surrounding the gun electrodes and the residual magnetic field on the cathode is (5 ÷ 6) Gs. It was demonstrated that for optimized gun geometry within the electron beam current range of (0.5 ÷ 10) A the amplitude of radial beam oscillations can be maintained close to 4% of the beam radius by adjusting the injection magnetic field generated by a separate magnetic coil. Simulating the performance of the gun by varying geometrical parameters indicated that the original gun model is close to optimum and the requirements to the precision of positioning the gun elements can be easily met with conventional technology.

Simulation and optimization of a 10 A electron gun with electrostatic compression for the electron beam ion source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pikin, A.; Beebe, E. N.; Raparia, D.

Increasing the current density of the electron beam in the ion trap of the Electron Beam Ion Source (EBIS) in BNL's Relativistic Heavy Ion Collider facility would confer several essential benefits. They include increasing the ions' charge states, and therefore, the ions' energy out of the Booster for NASA applications, reducing the influx of residual ions in the ion trap, lowering the average power load on the electron collector, and possibly also reducing the emittance of the extracted ion beam. Here, we discuss our findings from a computer simulation of an electron gun with electrostatic compression for electron current upmore » to 10 A that can deliver a high-current-density electron beam for EBIS. The magnetic field in the cathode-anode gap is formed with a magnetic shield surrounding the gun electrodes and the residual magnetic field on the cathode is (5 Division-Sign 6) Gs. It was demonstrated that for optimized gun geometry within the electron beam current range of (0.5 Division-Sign 10) A the amplitude of radial beam oscillations can be maintained close to 4% of the beam radius by adjusting the injection magnetic field generated by a separate magnetic coil. Simulating the performance of the gun by varying geometrical parameters indicated that the original gun model is close to optimum and the requirements to the precision of positioning the gun elements can be easily met with conventional technology.« less

Pressure profiles of plasmas confined in the field of a dipole magnet

NASA Astrophysics Data System (ADS)

Davis, Matthew Stiles

Understanding the maintenance and stability of plasma pressure confined by a strong magnetic field is a fundamental challenge in both laboratory and space plasma physics. Using magnetic and X-ray measurements on the Levitated Dipole Experiment (LDX), the equilibrium plasma pressure has been reconstructed, and variations of the plasma pressure for different plasma conditions have been examined. The relationship of these profiles to the magnetohydrodynamic (MHD) stability limit, and to the enhanced stability limit that results from a fraction of energetic trapped electrons, has been analyzed. In each case, the measured pressure profiles and the estimated fractional densities of energetic electrons were qualitatively consistent with expectations of plasma stability. LDX confines high temperature and high pressure plasma in the field of a superconducting dipole magnet. The strong dipole magnet can be either mechanically supported or magnetically levitated. When the dipole was mechanically supported, the plasma density profile was generally uniform while the plasma pressure was highly peaked. The uniform density was attributed to the thermal plasma being rapidly lost along the field to the mechanical supports. In contrast, the strongly peaked plasma pressure resulted from a fraction of energetic, mirror trapped electrons created by microwave heating at the electron cyclotron resonance (ECRH). These hot electrons are known to be gyrokinetically stabilized by the background plasma and can adopt pressure profiles steeper than the MHD limit. X-ray measurements indicated that this hot electron population could be described by an energy distribution in the range 50-100 keV. Combining information from the magnetic reconstruction of the pressure profile, multi-chord interferometer measurements of the electron density profile, and X-ray measurements of the hot electron energy distribution, the fraction of energetic electrons at the pressure peak was estimated to be ˜ 35% of the total electron population. When the dipole was magnetically levitated the plasma density increased substantially because particle losses to the mechanical supports were eliminated so particles could only be lost via slower cross-field transport processes. The pressure profile was observed to be broader during levitated operation than it was during supported operation, and the pressure appeared to be contained in both a thermal population and an energetic electron population. X-ray spectra indicated that the X-rays came from a similar hot electron population during levitated and supported operation; however, the hot electron fraction was an order of magnitude smaller during levitated operation (<3% of the total electron population). Pressure gradients for both supported and levitated plasmas were compared to the MHD limit. Levitated plasmas had pressure profiles that were (i) steeper than, (ii) shallower than, or (iii) near the MHD limit dependent on plasma conditions. However, those profiles that exceeded the MHD limit were observed to have larger fractions of energetic electrons. When the dipole magnet was supported, high pressure plasmas always had profiles that exceeded the MHD interchange stability limit, but the high pressure in these plasmas appeared to arise entirely from a population of energetic trapped electrons.

Effect of annealing on the sub-bandgap, defects and trapping states of ZnO nanostructures

NASA Astrophysics Data System (ADS)

Wahyuono, Ruri Agung; Hermann-Westendorf, Felix; Dellith, Andrea; Schmidt, Christa; Dellith, Jan; Plentz, Jonathan; Schulz, Martin; Presselt, Martin; Seyring, Martin; Rettenmeyer, Markus; Dietzek, Benjamin

2017-02-01

Annealing treatment was applied to different mesoporous ZnO nanostructures prepared by wet chemical synthesis, i.e. nanoflowers (NFs), spherical aggregates (SPs), and nanorods (NRs). The sub-bandgap, defect properties as well as the trapping state characteristics after annealing were characterized spectroscopically, including ultrasensitive photothermal deflection spectroscopy (PDS), photoluminescence and photo-electrochemical methods. The comprehensive experimental analysis reveals that annealing alters both the bandgap and the sub-bandgap. The defect concentration and the density of surface traps in the ZnO nanostructures are suppressed upon annealing as deduced from photoluminescence and open-circuit voltage decay analysis. The photo-electrochemical investigations reveal that the surface traps dominate the near conduction band edge of ZnO and, hence, lead to high recombination rates when used in DSSCs. The density of bulk traps in ZnO SPs is higher than that in ZnO NFs and ZnO NRs and promote lower recombination loss between photoinjected electrons with the electrolyte-oxidized species on the surface. The highest power conversion efficiency of ZnO NFs-, ZnO SPs-, and ZnO NRs-based DSSC obtained in our system is 2.0, 4.5, and 1.8%, respectively.

Towards lightweight and flexible high performance nanocrystalline silicon solar cells through light trapping and transport layers

NASA Astrophysics Data System (ADS)

Gray, Zachary R.

This thesis investigates ways to enhance the efficiency of thin film solar cells through the application of both novel nano-element array light trapping architectures and nickel oxide hole transport/electron blocking layers. Experimental results independently demonstrate a 22% enhancement in short circuit current density (JSC) resulting from a nano-element array light trapping architecture and a ˜23% enhancement in fill factor (FF) and ˜16% enhancement in open circuit voltage (VOC) resulting from a nickel oxide transport layer. In each case, the overall efficiency of the device employing the light trapping or transport layer was superior to that of the corresponding control device. Since the efficiency of a solar cell scales with the product of JSC, FF, and VOC, it follows that the results of this thesis suggest high performance thin film solar cells can be realized in the event light trapping architectures and transport layers can be simultaneously optimized. The realizations of these performance enhancements stem from extensive process optimization for numerous light trapping and transport layer fabrication approaches. These approaches were guided by numerical modeling techniques which will also be discussed. Key developments in this thesis include (1) the fabrication of nano-element topographies conducive to light trapping using various fabrication approaches, (2) the deposition of defect free nc-Si:H onto structured topographies by switching from SiH4 to SiF 4 PECVD gas chemistry, and (3) the development of the atomic layer deposition (ALD) growth conditions for NiO. Keywords: light trapping, nano-element array, hole transport layer, electron blocking layer, nickel oxide, nanocrystalline silicon, aluminum doped zinc oxide, atomic layer deposition, plasma enhanced chemical vapor deposition, electron beam lithography, ANSYS HFSS.

Research Update: Comparison of salt- and molecular-based iodine treatments of PbS nanocrystal solids for solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jähnig, Fabian; Bozyigit, Deniz; Yarema, Olesya

2015-02-01

Molecular- and salt-based chemical treatments are believed to passivate electronic trap states in nanocrystal-based semiconductors, which are considered promising for solar cells but suffer from high carrier recombination. Here, we compare the chemical, optical, and electronic properties of PbS nanocrystal-based solids treated with molecular iodine and tetrabutylammonium iodide. Surprisingly, both treatments increase—rather than decrease—the number density of trap states; however, the increase does not directly influence solar cell performance. We explain the origins of the observed impact on solar cell performance and the potential in using different chemical treatments to tune charge carrier dynamics in nanocrystal-solids.

Laboratory calibration of density-dependent lines in the extreme ultraviolet spectral region

NASA Astrophysics Data System (ADS)

Lepson, J. K.; Beiersdorfer, P.; Gu, M. F.; Desai, P.; Bitter, M.; Roquemore, L.; Reinke, M. L.

2012-05-01

We have been making spectral measurements in the extreme ultraviolet (EUV) from different laboratory sources in order to investigate the electron density dependence of various astrophysically important emission lines and to test the atomic models underlying the diagnostic line ratios. The measurement are being performed at the Livermore EBIT-I electron beam ion trap, the National Spherical Torus Experiment (NSTX) at Princeton, and the Alcator C-Mod tokamak at the Massachusetts Institute of Technology, which together span an electron density of four orders of magnitude and which allow us to test the various models at high and low density limits. Here we present measurements of Fe XXII and Ar XIV, which include new data from an ultra high resolution (λ/Δλ >4000) spectrometer at the EBIT-I facility. We found good agreement between the measurements and modeling calculations for Fe XXII, but poorer agreement for Ar XIV.

Observation of a stationary, current-free double layer in a plasma

NASA Technical Reports Server (NTRS)

Hairapetian, G.; Stenzel, R. L.

1990-01-01

A stationary, current-free, potential double layer is formed in a two-electron-population plasma due to self-consistent separation of the two electron species. The position and amplitude of the double layer are controlled by the relative densities of the two electron populations. The steady-state double layer traps the colder electrons on the high potential side, and generates a neutralized, monoenergetic ion beam on the low potential side. The field-aligned double layer is annihilated when an electron current is drawn through the plasma.

Nonextensive statistical mechanics approach to electron trapping in degenerate plasmas

NASA Astrophysics Data System (ADS)

Mebrouk, Khireddine; Gougam, Leila Ait; Tribeche, Mouloud

2016-06-01

The electron trapping in a weakly nondegenerate plasma is reformulated and re-examined by incorporating the nonextensive entropy prescription. Using the q-deformed Fermi-Dirac distribution function including the quantum as well as the nonextensive statistical effects, we derive a new generalized electron density with a new contribution proportional to the electron temperature T, which may dominate the usual thermal correction (∼T2) at very low temperatures. To make the physics behind the effect of this new contribution more transparent, we analyze the modifications arising in the propagation of ion-acoustic solitary waves. Interestingly, we find that due to the nonextensive correction, our plasma model allows the possibility of existence of quantum ion-acoustic solitons with velocity higher than the Fermi ion-sound velocity. Moreover, as the nonextensive parameter q increases, the critical temperature Tc beyond which coexistence of compressive and rarefactive solitons sets in, is shifted towards higher values.

Effect of q-nonextensive parameter and saturation time on electron density steepening in electron-positron-ion plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hashemzadeh, M., E-mail: hashemzade@gmail.com

2015-11-15

The effect of q-nonextensive parameter and saturation time on the electron density steepening in electron-positron-ion plasmas is studied by particle in cell method. Phase space diagrams show that the size of the holes, and consequently, the number of trapped particles strongly depends on the q-parameter and saturation time. Furthermore, the mechanism of the instability and exchange of energy between electron-positron and electric field is explained by the profiles of the energy density. Moreover, it is found that the q-parameter, saturation time, and electron and positron velocities affect the nonlinear evolution of the electron density which leads to the steepening ofmore » its structure. The q-nonextensive parameter or degree of nonextensivity is the relation between temperature gradient and potential energy of the system. Therefore, the deviation of q-parameter from unity indicates the degree of inhomogeneity of temperature or deviation from equilibrium. Finally, using the kinetic theory, a generalized q-dispersion relation is presented for electron-positron-ion plasma systems. It is found that the simulation results in the linear regime are in good agreement with the growth rate results obtained by the kinetic theory.« less

Study of Exciton Hopping Transport in PbS Colloidal Quantum Dot Thin Films Using Frequency- and Temperature-Scanned Photocarrier Radiometry

NASA Astrophysics Data System (ADS)

Hu, Lilei; Mandelis, Andreas; Melnikov, Alexander; Lan, Xinzheng; Hoogland, Sjoerd; Sargent, Edward H.

2017-01-01

Solution-processed colloidal quantum dots (CQDs) are promising materials for realizing low-cost, large-area, and flexible photovoltaic devices. The study of charge carrier transport in quantum dot solids is essential for understanding energy conversion mechanisms. Recently, solution-processed two-layer oleic-acid-capped PbS CQD solar cells with one layer treated with tetrabutylammonium iodide (TBAI) serving as the main light-absorbing layer and the other treated with 1,2-ethanedithiol (EDT) acting as an electron-blocking/hole-extraction layer were reported. These solar cells demonstrated a significant improvement in power conversion efficiency of 8.55% and long-term air stability. Coupled with photocarrier radiometry measurements, this work used a new trap-state mediated exciton hopping transport model, specifically for CQD thin films, to unveil and quantify exciton transport mechanisms through the extraction of hopping transport parameters including exciton lifetimes, hopping diffusivity, exciton detrapping time, and trap-state density. It is shown that PbS-TBAI has higher trap-state density than PbS-EDT that results in higher PbS-EDT exciton lifetimes. Hopping diffusivities of both CQD thin film types show similar temperature dependence, particularly higher temperatures yield higher hopping diffusivity. The higher diffusivity of PbS-TBAI compared with PbS-EDT indicates that PbS-TBAI is a much better photovoltaic material than PbS-EDT. Furthermore, PCR temperature spectra and deep-level photothermal spectroscopy provided additional insights to CQD surface trap states: PbS-TBAI thin films exhibit a single dominant trap level, while PbS-EDT films with lower trap-state densities show multiple trap levels.

Geometrical effects on the electron residence time in semiconductor nano-particles.

PubMed

Koochi, Hakimeh; Ebrahimi, Fatemeh

2014-09-07

We have used random walk (RW) numerical simulations to investigate the influence of the geometry on the statistics of the electron residence time τ(r) in a trap-limited diffusion process through semiconductor nano-particles. This is an important parameter in coarse-grained modeling of charge carrier transport in nano-structured semiconductor films. The traps have been distributed randomly on the surface (r(2) model) or through the whole particle (r(3) model) with a specified density. The trap energies have been taken from an exponential distribution and the traps release time is assumed to be a stochastic variable. We have carried out (RW) simulations to study the effect of coordination number, the spatial arrangement of the neighbors and the size of nano-particles on the statistics of τ(r). It has been observed that by increasing the coordination number n, the average value of electron residence time, τ̅(r) rapidly decreases to an asymptotic value. For a fixed coordination number n, the electron's mean residence time does not depend on the neighbors' spatial arrangement. In other words, τ̅(r) is a porosity-dependence, local parameter which generally varies remarkably from site to site, unless we are dealing with highly ordered structures. We have also examined the effect of nano-particle size d on the statistical behavior of τ̅(r). Our simulations indicate that for volume distribution of traps, τ̅(r) scales as d(2). For a surface distribution of traps τ(r) increases almost linearly with d. This leads to the prediction of a linear dependence of the diffusion coefficient D on the particle size d in ordered structures or random structures above the critical concentration which is in accordance with experimental observations.

Derivation of the threshold condition for the ion temperature gradient mode with an inverted density profile from a simple physics picture

NASA Astrophysics Data System (ADS)

Jhang, Hogun

2018-05-01

We show that the threshold condition for the toroidal ion temperature gradient (ITG) mode with an inverted density profile can be derived from a simple physics argument. The key in this picture is that the density inversion reduces the ion compression due to the ITG mode and the electron drift motion mitigates the poloidal potential build-up. This condition reproduces the same result that has been reported from a linear gyrokinetic calculation [T. S. Hahm and W. M. Tang, Phys. Fluids B 1, 1185 (1989)]. The destabilizing role of trapped electrons in toroidal geometry is easily captured in this picture.

Direct observation of trapped charges under field-plate in p-GaN gate AlGaN/GaN high electron mobility transistors by electric field-induced optical second-harmonic generation

NASA Astrophysics Data System (ADS)

Katsuno, Takashi; Manaka, Takaaki; Soejima, Narumasa; Iwamoto, Mitsumasa

2017-02-01

Trapped charges underneath the field-plate (FP) in a p-gallium nitride (GaN) gate AlGaN/ GaN high electron mobility transistor device were visualized by using electric field-induced optical second-harmonic generation imaging. Second-harmonic (SH) signals in the off-state of the device with FP indicated that the electric field decreased at the p-GaN gate edge and concentrated at the FP edge. Nevertheless, SH signals originating from trapped charges were slightly observed at the p-GaN gate edge and were not observed at the FP edge in the on-state. Compared with the device without FP, reduction of trapped charges at the p-GaN gate edge of the device with FP is attributed to attenuation of the electric field with the aid of the FP. Negligible trapped charges at the FP edge is owing to lower trap density of the SiO2/AlGaN interface at the FP edge compared with that of the SiO2/p-GaN sidewall interface at the p-GaN gate edge and attenuated electric field by the thickness of the SiO2 passivation layer on the AlGaN surface.

Distribution of localized states from fine analysis of electron spin resonance spectra of organic semiconductors: Physical meaning and methodology

NASA Astrophysics Data System (ADS)

Mishchenko, Andrey S.; Matsui, Hiroyuki; Hasegawa, Tatsuo

2012-02-01

We develop an analytical method for the processing of electron spin resonance (ESR) spectra. The goal is to obtain the distributions of trapped carriers over both their degree of localization and their binding energy in semiconductor crystals or films composed of regularly aligned organic molecules [Phys. Rev. Lett.PRLTAO0031-900710.1103/PhysRevLett.104.056602 104, 056602 (2010)]. Our method has two steps. We first carry out a fine analysis of the shape of the ESR spectra due to the trapped carriers; this reveals the distribution of the trap density of the states over the degree of localization. This analysis is based on the reasonable assumption that the linewidth of the trapped carriers is predetermined by their degree of localization because of the hyperfine mechanism. We then transform the distribution over the degree of localization into a distribution over the binding energies. The transformation uses the relationships between the binding energies and the localization parameters of the trapped carriers. The particular relation for the system under study is obtained by the Holstein model for trapped polarons using a diagrammatic Monte Carlo analysis. We illustrate the application of the method to pentacene organic thin-film transistors.

A time-resolved current method and TSC under vacuum conditions of SEM: Trapping and detrapping processes in thermal aged XLPE insulation cables

NASA Astrophysics Data System (ADS)

Boukezzi, L.; Rondot, S.; Jbara, O.; Boubakeur, A.

2017-03-01

Thermal aging of cross-linked polyethylene (XLPE) can cause serious concerns in the safety operation in high voltage system. To get a more detailed picture on the effect of thermal aging on the trapping and detrapping process of XLPE in the melting temperature range, Thermal Stimulated Current (TSC) have been implemented in a Scanning Electron Microscope (SEM) with a specific arrangement. The XLPE specimens are molded and aged at two temperatures (120 °C and 140 °C) situated close to the melting temperature of the material. The use of SEM allows us to measure both leakage and displacement currents induced in samples under electron irradiation. The first represents the conduction process of XLPE and the second gives information on the trapping of charges in the bulk of the material. TSC associated to the SEM leads to show spectra of XLPE discharge under thermal stimulation using both currents measured after electron irradiation. It was found that leakage current in the charging process may be related to the physical defects resulting in crystallinity variation under thermal aging. However the trapped charge can be affected by the carbonyl groups resulting from the thermo-oxidation degradation and the disorder in the material. It is evidenced from the TSC spectra of unaged XLPE that there is no detrapping charge under heat stimulation. Whereas the presence of peaks in the TSC spectra of thermally aged samples indicates that there is some amount of trapped charge released by heating. The detrapping behavior of aged XLPE is supported by the supposition of the existence of two trap levels: shallow traps and deep traps. Overall, physico-chemical reactions under thermal aging at high temperatures leads to the enhancement of shallow traps density and changes in range of traps depth. These changes induce degradation of electrical properties of XLPE.

Surface states and annihilation characteristics of positrons trapped at the oxidized Cu(100) surface

NASA Astrophysics Data System (ADS)

Fazleev, N. G.; Weiss, A. H.

2013-06-01

In this work we present the results of theoretical studies of positron surface and bulk states and annihilation probabilities of surface-trapped positrons with relevant core electrons at the oxidized Cu(100) surface under conditions of high oxygen coverage. Oxidation of the Cu(100) surface has been studied by performing an ab-initio investigation of the stability and electronic structure of the Cu(100) missing row reconstructed surface at various on-surface and subsurface oxygen coverages ranging from 0.5 to 1.5 monolayers using density functional theory (DFT). All studied structures have been found to be energetically more favorable as compared to structures formed by purely on-surface oxygen adsorption. The observed decrease in the positron work function when oxygen atoms occupy on-surface and subsurface sites has been attributed to a significant charge redistribution within the first two layers, buckling effects within each layer and an interlayer expansion. The computed positron binding energy, positron surface state wave function, and annihilation probabilities of the surface trapped positrons with relevant core electrons demonstrate their sensitivity to oxygen coverage, atomic structure of the topmost layers of surfaces, and charge transfer effects. Theoretical results are compared with experimental data obtained from studies of oxidation of the Cu(100) surface using positron annihilation induced Auger electron spectroscopy (PAES). The results presented provide an explanation for the changes observed in the probability of annihilation of surface trapped positrons with Cu 3p core-level electrons as a function of annealing temperature.

Model for determination of mid-gap states in amorphous metal oxides from thin film transistors

NASA Astrophysics Data System (ADS)

Bubel, S.; Chabinyc, M. L.

2013-06-01

The electronic density of states in metal oxide semiconductors like amorphous zinc oxide (a-ZnO) and its ternary and quaternary oxide alloys with indium, gallium, tin, or aluminum are different from amorphous silicon, or disordered materials such as pentacene, or P3HT. Many ZnO based semiconductors exhibit a steep decaying density of acceptor tail states (trap DOS) and a Fermi level (EF) close to the conduction band energy (EC). Considering thin film transistor (TFT) operation in accumulation mode, the quasi Fermi level for electrons (Eq) moves even closer to EC. Classic analytic TFT simulations use the simplification EC-EF> `several'kT and cannot reproduce exponential tail states with a characteristic energy smaller than 1/2 kT. We demonstrate an analytic model for tail and deep acceptor states, valid for all amorphous metal oxides and include the effect of trap assisted hopping instead of simpler percolation or mobility edge models, to account for the observed field dependent mobility.

Induced Charge Fluctuations in Semiconductor Detectors with a Cylindrical Geometry

NASA Astrophysics Data System (ADS)

Samedov, Victor V.

2018-01-01

Now, compound semiconductors are very appealing for hard X-ray room-temperature detectors for medical and astrophysical applications. Despite the attractive properties of compound semiconductors, such as high atomic number, high density, wide band gap, low chemical reactivity and long-term stability, poor hole and electron mobility-lifetime products degrade the energy resolution of these detectors. The main objective of the present study is in development of a mathematical model of the process of the charge induction in a cylindrical geometry with accounting for the charge carrier trapping. The formulae for the moments of the distribution function of the induced charge and the formulae for the mean amplitude and the variance of the signal at the output of the semiconductor detector with a cylindrical geometry were derived. It was shown that the power series expansions of the detector amplitude and the variance in terms of the inverse bias voltage allow determining the Fano factor, electron mobility lifetime product, and the nonuniformity level of the trap density of the semiconductor material.

Role of density gradient driven trapped electron mode turbulence in the H-mode inner core with electron heating

DOE PAGES

Ernst, D. R.; Burrell, K. H.; Guttenfelder, W.; ...

2016-05-10

In a series of DIII-D [J. L. Luxon, Nucl. Fusion 42 614 (2002)] low torque quiescent H-mode experiments show that density gradient driven TEM (DGTEM) turbulence dominates the inner core of H-Mode plasmas during strong electron cyclotron heating (ECH). By adding 3.4 MW ECH doubles T e/T i from 0.5 to 1.0, which halves the linear DGTEM critical density gradient, locally reducing density peaking, while transport in all channels displays extreme stiffness in the density gradient. This then suggests fusion -heating may degrade inner core confinement in H-Mode plasmas with moderate density peaking and low collisionality, with equal electron andmore » ion temperatures, key conditions expected in burning plasmas. Gyrokinetic simulations using GYRO [J. Candy and R. E. Waltz, J. Comp. Phys. 186 545 (2003)] (and GENE [F. Jenko et al., Phys. Plasmas 7, 1904 (2000)]) closely match not only particle, energy, and momentum fluxes, but also density fluctuation spectra from Doppler Backscattering (DBS), with and without ECH. Inner core DBS density fluctuations display discrete frequencies with adjacent toroidal mode numbers, which we identify as DGTEMs. GS2 [W. Dorland et al., Phys. Rev. Lett. 85 5579 (2000)] predictions show the DGTEM can be suppressed, to avoid degradation with electron heating, by broadening the current density profile to attain q 0 > q min > 1.« less

Measurement of electrons from albedo neutron decay and neutron density in near-Earth space.

PubMed

Li, Xinlin; Selesnick, Richard; Schiller, Quintin; Zhang, Kun; Zhao, Hong; Baker, Daniel N; Temerin, Michael A

2017-12-21

The Galaxy is filled with cosmic-ray particles, mostly protons with kinetic energies greater than hundreds of megaelectronvolts. Around Earth, trapped energetic protons, electrons and other particles circulate at altitudes from about 500 to 40,000 kilometres in the Van Allen radiation belts. Soon after these radiation belts were discovered six decades ago, it was recognized that the main source of inner-belt protons (with kinetic energies of tens to hundreds of megaelectronvolts) is cosmic-ray albedo neutron decay (CRAND). In this process, cosmic rays that reach the upper atmosphere interact with neutral atoms to produce albedo neutrons, which, being prone to β-decay, are a possible source of geomagnetically trapped protons and electrons. These protons would retain most of the kinetic energy of the neutrons, while the electrons would have lower energies, mostly less than one megaelectronvolt. The viability of CRAND as an electron source has, however, been uncertain, because measurements have shown that the electron intensity in the inner Van Allen belt can vary greatly, while the neutron-decay rate should be almost constant. Here we report measurements of relativistic electrons near the inner edge of the inner radiation belt. We demonstrate that the main source of these electrons is indeed CRAND, and that this process also contributes to electrons in the inner belt elsewhere. Furthermore, measurement of the intensity of electrons generated by CRAND provides an experimental determination of the neutron density in near-Earth space-2 × 10 -9 per cubic centimetre-confirming theoretical estimates.

Morphologic and proteomic characterization of exosomes released by cultured extravillous trophoblast cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Atay, Safinur; Gercel-Taylor, Cicek; Kesimer, Mehmet

Exosomes represent an important intercellular communication vehicle, mediating events essential for the decidual microenvironment. While we have demonstrated exosome induction of pro-inflammatory cytokines, to date, no extensive characterization of trophoblast-derived exosomes has been provided. Our objective was to provide a morphologic and proteomic characterization of these exosomes. Exosomes were isolated from the conditioned media of Swan71 human trophoblast cells by ultrafiltration and ultracentrifugation. These were analyzed for density (sucrose density gradient centrifugation), morphology (electron microscopy), size (dynamic light scattering) and protein composition (Ion Trap mass spectrometry and western immunoblotting). Based on density gradient centrifugation, microvesicles from Sw71 cells exhibit amore » density between 1.134 and 1.173 g/ml. Electron microscopy demonstrated that microvesicles from Sw71 cells exhibit the characteristic cup-shaped morphology of exosomes. Dynamic light scattering showed a bell-shaped curve, indicating a homogeneous population with a mean size of 165 nm {+-} 0.5 nm. Ion Trap mass spectrometry demonstrated the presence of exosome marker proteins (including CD81, Alix, cytoskeleton related proteins, and Rab family). The MS results were confirmed by western immunoblotting. Based on morphology, density, size and protein composition, we defined the release of exosomes from extravillous trophoblast cells and provide their first extensive characterization. This characterization is essential in furthering our understanding of 'normal' early pregnancy.« less

Effect of Fe{sub 3}O{sub 4} nanoparticles on positive streamer propagation in transformer oil

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lv, Yuzhen, E-mail: yzlv@ncepu.edu.cn; School of Energy, Power and Mechanical Engineering, North China Electric Power University, Beijing, 102206; Wang, Qi

Fe{sub 3}O{sub 4} nanoparticles with an average diameter of 10 nm were prepared and used to modify streamer characteristic of transformer oil. It was found that positive streamer propagation velocity in transformer oil-based Fe{sub 3}O{sub 4} nanofluid is greatly reduced by 51% in comparison with that in pure oil. The evolution of streamer shape is also dramatically affected by the presence of nanoparticles, changing from a tree-like shape with sharp branches in pure oil to a bush-like structure with thicker and denser branches in nanofluid. The TSC results reveal that the modification of Fe{sub 3}O{sub 4} nanoparticle can greatly increasemore » the density of shallow trap and change space charge distribution in nanofluid by converting fast electrons into slow electrons via trapping and de-trapping process in shallow traps. These negative space charges induced by nanoparticles greatly alleviate the electric field distortion in front of the positive streamer tip and significantly hinder the propagation of positive streamer.« less

Reactivity of superoxide radical anion and hydroperoxyl radical with alpha-phenyl-N-tert-butylnitrone (PBN) derivatives.

PubMed

Durand, Grégory; Choteau, Fanny; Pucci, Bernard; Villamena, Frederick A

2008-12-04

Nitrones have exhibited pharmacological activity against radical-mediated pathophysiological conditions and as analytical reagents for the identification of transient radical species by electron paramagnetic resonance (EPR) spectroscopy. In this work, competitive spin trapping, stopped-flow kinetics, and density functional theory (DFT) were employed to assess and predict the reactivity of O(2)(*-) and HO(2)(*) with various para-substituted alpha-phenyl-N-tert-butylnitrone (PBN) spin traps. Rate constants of O(2)(*-) trapping by nitrones were determined using competitive UV-vis stopped-flow method with phenol red (PR) as probe, while HO(2)(*) trapping rate constants were calculated using competition kinetics with 5,5-dimethylpyrroline N-oxide (DMPO) by employing EPR spectroscopy. The effects of the para substitution on the charge density of the nitronyl-carbon and on the free energies of nitrone reactivity with O(2)(*-) and HO(2)(*) were computationally rationalized at the PCM/B3LYP/6-31+G(d,p)//B3LYP/6-31G(d) level of theory. Theoretical and experimental data show that the rate of O(2)(*-) addition to PBN derivatives is not affected by the polar effect of the substituents. However, the reactivity of HO(2)(*) follows the Hammett equation and is increased as the substituent becomes more electron withdrawing. This supports the conclusion that the nature of HO(2)(*) addition to PBN derivatives is electrophilic, while the addition of O(2)(*-) to PBN-type compounds is only weakly electrophilic.

Defect healing at room temperature in pentacene thin films and improved transistor performance

NASA Astrophysics Data System (ADS)

Kalb, Wolfgang L.; Meier, Fabian; Mattenberger, Kurt; Batlogg, Bertram

2007-11-01

We report on a healing of defects at room temperature in the organic semiconductor pentacene. This peculiar effect is a direct consequence of the weak intermolecular interaction which is characteristic of organic semiconductors. Pentacene thin-film transistors were fabricated and characterized by in situ gated four-terminal measurements. Under high vacuum conditions (base pressure of order 10-8mbar ), the device performance is found to improve with time. The effective field-effect mobility increases by as much as a factor of 2 and mobilities up to 0.45cm2/Vs were achieved. In addition, the contact resistance decreases by more than an order of magnitude and there is a significant reduction in current hysteresis. Oxygen and nitrogen exposure as well as annealing experiments show the improvement of the electronic parameters to be driven by a thermally promoted process and not by chemical doping. In order to extract the spectral density of trap states from the transistor characteristics, we have implemented a powerful scheme which allows for a calculation of the trap densities with high accuracy in a straightforward fashion. We show the performance improvement to be due to a reduction in the density of shallow traps ⩽0.15eV from the valence band edge, while the energetically deeper traps are essentially unaffected. This work contributes to an understanding of the shallow traps in organic semiconductors and identifies structural point defects within the grains of the polycrystalline thin films as a major cause.

Growth control and design principles of self-assembled quantum dot multiple layer structures for photodetector applications

NASA Astrophysics Data System (ADS)

Asano, Tetsuya

Self-assembled quantum dots (SAQDs) formed by lattice-mismatch strain-driven epitaxy are currently the most advanced nanostructure-based platform for high performance optoelectronic applications such as lasers and photodetectors. While the QD lasers have realized the best performance in terms of threshold current and temperature stability, the performance of QD photodetectors (QDIPs) has not surpassed that of quantum well (QW) photodetectors. This is because the requirement of maximal photon absorption for photodetectors poses the challenge of forming an appropriately-doped large number of uniform multiple SAQD (MQD) layers with acceptable structural defect (dislocation etc.) density. This dissertation addresses this challenge and, through a combination of innovative approach to control of defects in MQD growth and judicious placement of SAQDs in a resonant cavity, shows that SAQD based quantum dot infrared photodetectors (QDIPs) can be made competitive with their quantum well counterparts. Specifically, the following major elements were accomplished: (i) the molecular beam epitaxy (MBE) growth of dislocation-free and uniform InAs/InAlGaAs/GaAs MQD strained structures up to 20-period, (ii) temperature-dependent photo- and dark-current based analysis of the electron density distribution inside the MQD structures for various doping schemes, (iii) deep level transient spectroscopy based identification of growth procedure dependent deleterious deep traps in SAQD structures and their reduction, and (iv) the use of an appropriately designed resonant cavity (RC) and judicious placement of the SAQD layers for maximal enhancement of photon absorption to realize over an order of magnitude enhancement in QDIP detectivity. The lattermost demonstration indicates that implementation of the growth approach and resonant cavity strategy developed here while utilizing the currently demonstrated MIR and LWIR QDIPs with detectivities > 10 10 cmHz1/2/W at ˜ 77 K will enable RC-QDIP with detectivites > 1011 cmHz1/2/W that become competitive with other photodetector technologies in the mid IR (3 -- 5 mum) and long wavelength IR (8 -- 12 mum) ranges with the added advantage of materials stability and normal incidence sensitivity. Extended defect-free and size-uniform MQD structures of shallow InAs on GaAs (001) SAQDs capped with In0.15Ga0.85As strain relief layers and separated by GaAs spacer layer were grown up to 20 periods employing a judicious combination of MBE and migration enhanced epitaxy (MEE) techniques and examined by detailed transmission electron microscopy studies to reveal the absence of detectable extended defects (dislocation density < ˜ 107 /cm2). Photoluminescence studies revealed high optical quality. As our focus was on mid-infrared detectors, the MQD structures were grown in n (GaAs) -- i (MQD) -- n (GaAs) structures providing electron occupancy in at least the quantum confined ground energy states of the SAQDs and thus photodetection based upon transitions to electron excited states. Bias and temperature-dependent dark and photocurrent measurements were carried out for a variety of doping profiles and the electron density spatial distribution was determined from the resulting band bending profiles. It is revealed that almost no free electrons are present in the middle SAQD layers in the 10-period and 20-period n--i--n QDIP structures, indicating the existence of a high density (˜1015/cm3) of negative charges which can be attributed to electrons trapped in deep levels. To examine the nature of these deep traps, samples suitable for deep level transient spectroscopy measurement were synthesized and examined. These studies, carried out for the first time for SAQDs, revealed that the deep traps are dominantly present in the GaAs overgrowth layers grown at 500°C by MBE. For structures involving GaAs overgrowths using MEE at temperatures as low as 350°C, the deep trap density in the GaAs overgrowth layer was found to be significantly reduced by factor of ˜ 20. Thus, employing MEE growth for GaAs spacer layers in n--i(20-period MQD)-- n QDIP structures, electrons could be provided to all the SAQDs owing to the significantly reduced deep trap density. Finally, for enhancement of the incident photon absorption, we designed and fabricated asymmetric Fabry-Perot resonant cavity-enhanced QDIPs. For effective enhancement, SAQDs with a narrow photoresponse in the 3 -- 5 mum infrared regime were realized utilizing [(AlAs)1(GaAs)4]4 short-period superlattices as the confining barrier layers. Incorporating such SAQDs in RC-QDIPs, we successfully demonstrated ˜ 10 times enhancement of the QDIP detectivity. As stated above, this makes RC-QDIPs containing QDIPs with the currently demonstrated detectivities of ˜ 1010 cmHz 1/2/W at ˜ 77 K competitive with other IR photodetector technologies.

Satellite and Ground Signatures of Kinetic and Inertial Scale ULF Alfven Waves Propagating in Warm Plasma in Earth's Magnetosphere

NASA Astrophysics Data System (ADS)

Rankin, R.; Sydorenko, D.

2015-12-01

Results from a 3D global numerical model of Alfven wave propagation in a warm multi-species plasma in Earth's magnetosphere are presented. The model uses spherical coordinates, accounts for a non-dipole magnetic field, vertical structure of the ionosphere, and an air gap below the ionosphere. A realistic density model is used. Below the exobase altitude (2000 km) the densities and the temperatures of electrons, ions, and neutrals are obtained from the IRI and MSIS models. Above the exobase, ballistic (originating from the ionosphere and returning to ionosphere) and trapped (bouncing between two reflection points above the ionosphere) electron populations are considered similar to [Pierrard and Stegen (2008), JGR, v.113, A10209]. Plasma parameters at the exobase provided by the IRI are the boundary conditions for the ballistic electrons while the [Carpenter and Anderson (1992), JGR, v.97, p.1097] model of equatorial electron density defines parameters of the trapped electron population. In the simulations that are presented, Alfven waves with frequencies from 1 Hz to 0.01 Hz and finite azimuthal wavenumbers are excited in the magnetosphere and compared with Van Allen Probes data and ground-based observations from the CARISMA array of ground magnetometers. When short perpendicular scale waves reflect form the ionosphere, compressional Alfven waves are observed to propagate across the geomagnetic field in the ionospheric waveguide [e.g., Lysak (1999), JGR, v.104, p.10017]. Signals produced by the waves on the ground are discussed. The wave model is also applied to interpret recent Van Allen Probes observations of kinetic scale ULF waves that are associated with radiation belt electron dynamics and energetic particle injections.

Charge transfer mechanism in titanium-doped microporous silica for photocatalytic water-splitting applications

DOE PAGES

Sapp, Wendi; Koodali, Ranjit; Kilin, Dmitri

2016-02-29

Solar energy conversion into chemical form is possible using artificial means. One example of a highly-efficient fuel is solar energy used to split water into oxygen and hydrogen. Efficient photocatalytic water-splitting remains an open challenge for researchers across the globe. Despite significant progress, several aspects of the reaction, including the charge transfer mechanism, are not fully clear. Density functional theory combined with density matrix equations of motion were used to identify and characterize the charge transfer mechanism involved in the dissociation of water. A simulated porous silica substrate, using periodic boundary conditions, with Ti 4+ ions embedded on the innermore » pore wall was found to contain electron and hole trap states that could facilitate a chemical reaction. A trap state was located within the silica substrate that lengthened relaxation time, which may favor a chemical reaction. A chemical reaction would have to occur within the window of photoexcitation; therefore, the existence of a trapping state may encourage a chemical reaction. Furthermore, this provides evidence that the silica substrate plays an integral part in the electron/hole dynamics of the system, leading to the conclusion that both components (photoactive materials and support) of heterogeneous catalytic systems are important in optimization of catalytic efficiency.« less

"Inner electron" radiation belt: problems of model creation

NASA Astrophysics Data System (ADS)

Temnyi, V.

The contents of intensive fluxes of trapped electrons J_e with energies E_e>40 keV in center of the inner terrestrial radiation belt is remains uncertain in model Vette AE-8, 1991. It is explained by methodical difficulties of discrete measurements of electrons by narrow-angle spectrometers with background from omnidirectional penetrating protons with energies E_p>40 MeV and electrons with E_e>1 MeV after STARFISH burst. The results of integral measurements of trapped electrons by 2 groups: Krassovsky V.I. on III Soviet satellite (May 1958) and J. Van Allen on EXPLORER-IV (July-August 1958) and on INJUN-1 (1961) heave given a performances concerning electron energy fluxes I_e(E_e>20 keV) ˜ (20-100) erg cm-2 c-1 into inner radiation belt. Improved integral measurements of electrons by Krassovsky group on satellites KOSMOS-3,-5 and ELECTRON-1,-3 (1962-1964) allow to determine the distributions of their intensities in the whole inner belt. They can add the central part of inner belt of AE-8 model (see report Bolunova et al., COSPAR-1965, publ. in SPACE RESEARCH VI, 1967, p. 649-661). From these data a maximum of trapped electrons J_e(E_e>40 keV)=2\\cdot10^9 cm-2 c-1 is placed on L=1,6, B/B_0=1. Intensities up to 2\\cdot10^7 cm-2 c-1 are determined only by coordinates (L, B). For smaller intensities become essential dependence from longitude along a drift shell. So, in the center of the inner radiation belt the energy fluxes I_e(E_e>40 keV) reach 500 erg cm-2 c-1 and density n_e=0,2 cm-3 while for trapped protons I_p(E_p>40 MeV) is less than 3 erg cm-2 c-1 and n_p< 5\\cdot10-6 cm-3. It forces to search a more powerful sources trapped electron than beta-decay of neutrons albedo of cosmic rays.

Wakefield acceleration in planetary atmospheres: A possible source of MeV electrons. The collisionless case

NASA Astrophysics Data System (ADS)

Arrayás, M.; Cubero, D.; Montanya, J.; Seviour, R.; Trueba, J. L.

2018-07-01

Intense electromagnetic pulses interacting with a plasma can create a wake of plasma oscillations. Electrons trapped in such oscillations can be accelerated under certain conditions to very high energies. We study the optimal conditions for the wakefield acceleration to produce MeV electrons in planetary plasmas under collisionless conditions. The conditions for the optimal plasma densities can be found in the Earth atmosphere at higher altitudes than 10-15 km, which are the altitudes where lightning leaders can take place.

Dependence of the Energy Resolution of a Hemispherical Semiconductor Detector on the Bias Voltage

NASA Astrophysics Data System (ADS)

Samedov, V. V.

2017-12-01

It is shown that the series expansion of the amplitude and variance of the hemispherical semiconductor detector signal in inverse bias voltage allows finding the Fano factor, the product of electron lifetime and mobility, the degree of inhomogeneity of the trap density in the semiconductor material, and the relative variance of the electronic channel gain. An important advantage of the proposed method is that it is independent of the electronic channel gain and noise.

Influence of a falling edge on high power microwave pulse combination

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Jiawei; Huang, Wenhua; Science and Technology on High Power Microwave Laboratory, Northwest Institute of Nuclear Technology, Xi'an 710024

This paper presents an explanation of the influence of a microwave falling edge on high-power microwave pulse combination. Through particle-in-cell simulations, we discover that the falling edge is the driving factor that limits the output power of the combined pulses. We demonstrate that the space charge field, which accumulates to become comparable to the E-field at the falling edge of the former pulse, will trap the electrons in the gas layer and decrease its energy to attain a high ionization rate. Hence, avalanche discharge, caused by trapped electrons, makes the plasma density to approach the critical density and cuts offmore » the latter microwave pulse. An X-band combination experiment is conducted with different pulse intervals. This experiment confirms that the high density plasma induced by the falling edge can cut off the latter pulse, and that the time required for plasma recombination in the transmission channel is several microseconds. To ensure a high output power for combined pulses, the latter pulse should be moved ahead of the falling edge of the former one, and consequently, a beat wave with high peak power becomes the output by adding two pulses with normal amplitudes.« less

Room-Temperature Activation of InGaZnO Thin-Film Transistors via He+ Irradiation.

PubMed

Stanford, Michael G; Noh, Joo Hyon; Mahady, Kyle; Ievlev, Anton V; Maksymovych, Peter; Ovchinnikova, Olga S; Rack, Philip D

2017-10-11

Amorphous indium gallium zinc oxide (a-IGZO) is a transparent semiconductor which has demonstrated excellent electrical performance as thin-film transistors (TFTs). However, a high-temperature activation process is generally required which is incompatible for next-generation flexible electronic applications. In this work, He + irradiation is demonstrated as an athermal activation process for a-IGZO TFTs. Controlling the He + dose enables the tuning of charge density, and a dose of 1 × 10 14 He + /cm 2 induces a change in charge density of 2.3 × 10 12 cm -2 . Time-dependent transport measurements and time-of-flight secondary ion mass spectroscopy (ToF-SIMS) indicate that the He + -induced trapped charge is introduced because of preferential oxygen-vacancy generation. Scanning microwave impedance microscopy confirms that He + irradiation improves the conductivity of the a-IGZO. For realization of a permanent activation, IGZO was exposed with a He + dose of 5 × 10 14 He + /cm 2 and then aged 24 h to allow decay of the trapped oxide charge originating for electron-hole pair generation. The resultant shift in the charge density is primarily attributed to oxygen vacancies generated by He + sputtering in the near-surface region.

Influence of a falling edge on high power microwave pulse combination

NASA Astrophysics Data System (ADS)

Li, Jiawei; Huang, Wenhua; Zhu, Qi; Xiao, Renzhen; Shao, Hao

2016-07-01

This paper presents an explanation of the influence of a microwave falling edge on high-power microwave pulse combination. Through particle-in-cell simulations, we discover that the falling edge is the driving factor that limits the output power of the combined pulses. We demonstrate that the space charge field, which accumulates to become comparable to the E-field at the falling edge of the former pulse, will trap the electrons in the gas layer and decrease its energy to attain a high ionization rate. Hence, avalanche discharge, caused by trapped electrons, makes the plasma density to approach the critical density and cuts off the latter microwave pulse. An X-band combination experiment is conducted with different pulse intervals. This experiment confirms that the high density plasma induced by the falling edge can cut off the latter pulse, and that the time required for plasma recombination in the transmission channel is several microseconds. To ensure a high output power for combined pulses, the latter pulse should be moved ahead of the falling edge of the former one, and consequently, a beat wave with high peak power becomes the output by adding two pulses with normal amplitudes.

Evaluation of trapping-web designs

USGS Publications Warehouse

Lukacs, P.M.; Anderson, D.R.; Burnham, K.P.

2005-01-01

The trapping web is a method for estimating the density and abundance of animal populations. A Monte Carlo simulation study is performed to explore performance of the trapping web for estimating animal density under a variety of web designs and animal behaviours. The trapping performs well when animals have home ranges, even if the home ranges are large relative to trap spacing. Webs should contain at least 90 traps. Trapping should continue for 5-7 occasions. Movement rates have little impact on density estimates when animals are confined to home ranges. Estimation is poor when animals do not have home ranges and movement rates are rapid. The trapping web is useful for estimating the density of animals that are hard to detect and occur at potentially low densities. ?? CSIRO 2005.

Interface Trap Profiles in 4H- and 6H-SiC MOS Capacitors with Nitrogen- and Phosphorus-Doped Gate Oxides

NASA Astrophysics Data System (ADS)

Jiao, C.; Ahyi, A. C.; Dhar, S.; Morisette, D.; Myers-Ward, R.

2017-04-01

We report results on the interface trap density ( D it) of 4H- and 6H-SiC metal-oxide-semiconductor (MOS) capacitors with different interface chemistries. In addition to pure dry oxidation, we studied interfaces formed by annealing thermal oxides in NO or POCl3. The D it profiles, determined by the C- ψ s method, show that, although the as-oxidized 4H-SiC/SiO2 interface has a much higher D it profile than 6H-SiC/SiO2, after postoxidation annealing (POA), both polytypes maintain comparable D it near the conduction band edge for the gate oxides incorporated with nitrogen or phosphorus. Unlike most conventional C- V- or G- ω-based methods, the C- ψ s method is not limited by the maximum probe frequency, therefore taking into account the "fast traps" detected in previous work on 4H-SiC. The results indicate that such fast traps exist near the band edge of 6H-SiC also. For both polytypes, we show that the total interface trap density ( N it) integrated from the C- ψ s method is several times that obtained from the high-low method. The results suggest that the detected fast traps have a detrimental effect on electron transport in metal-oxide-semiconductor field-effect transistor (MOSFET) channels.

Electronic transport and Schottky barrier heights of p-type CuAlO2 Schottky diodes

NASA Astrophysics Data System (ADS)

Lin, Yow-Jon; Luo, Jie; Hung, Hao-Che

2013-05-01

A CuAlO2 Schottky diode was fabricated and investigated using current density-voltage (J-V) and capacitance-voltage (C-V) methods. It is shown that the barrier height (qϕB) determined from J-V measurements is lower than that determined from C-V measurements and qϕB determined from C-V measurements is close to the Schottky limit. This is due to a combined effect of the image-force lowering and tunneling. Time domain measurements provide evidence of the domination of electron trapping with long-second lifetime in CuAlO2. Carrier capture and emission from charge traps may lead to the increased probability of tunneling, increasing the ideality factor.

DFT study of anisotropy effects on the electronic properties of diamond nanowires with nitrogen-vacancy center.

PubMed

Solano, Jesús Ramírez; Baños, Alejandro Trejo; Durán, Álvaro Miranda; Quiroz, Eliel Carvajal; Irisson, Miguel Cruz

2017-09-26

In the development of quantum computing and communications, improvements in materials capable of single photon emission are of great importance. Advances in single photon emission have been achieved experimentally by introducing nitrogen-vacancy (N-V) centers on diamond nanostructures. However, theoretical modeling of the anisotropic effects on the electronic properties of these materials is almost nonexistent. In this study, the electronic band structure and density of states of diamond nanowires with N-V defects were analyzed through first principles approach using the density functional theory and the supercell scheme. The nanowires were modeled on two growth directions [001] and [111]. All surface dangling bonds were passivated with hydrogen (H) atoms. The results show that the N-V introduces multiple trap states within the energy band gap of the diamond nanowire. The energy difference between these states is influenced by the growth direction of the nanowires, which could contribute to the emission of photons with different wavelengths. The presence of these trap states could reduce the recombination rate between the conduction and the valence band, thus favoring the single photon emission. Graphical abstract Diamond nanowires with nitrogen-vacancy centerᅟ.

Core turbulence behavior moving from ion-temperature-gradient regime towards trapped-electron-mode regime in the ASDEX Upgrade tokamak and comparison with gyrokinetic simulation

NASA Astrophysics Data System (ADS)

Happel, T.; Navarro, A. Bañón; Conway, G. D.; Angioni, C.; Bernert, M.; Dunne, M.; Fable, E.; Geiger, B.; Görler, T.; Jenko, F.; McDermott, R. M.; Ryter, F.; Stroth, U.

2015-03-01

Additional electron cyclotron resonance heating (ECRH) is used in an ion-temperature-gradient instability dominated regime to increase R / L Te in order to approach the trapped-electron-mode instability regime. The radial ECRH deposition location determines to a large degree the effect on R / L Te . Accompanying scale-selective turbulence measurements at perpendicular wavenumbers between k⊥ = 4-18 cm-1 (k⊥ρs = 0.7-4.2) show a pronounced increase of large-scale density fluctuations close to the ECRH radial deposition location at mid-radius, along with a reduction in phase velocity of large-scale density fluctuations. Measurements are compared with results from linear and non-linear flux-matched gyrokinetic (GK) simulations with the gyrokinetic code GENE. Linear GK simulations show a reduction of phase velocity, indicating a pronounced change in the character of the dominant instability. Comparing measurement and non-linear GK simulation, as a central result, agreement is obtained in the shape of radial turbulence level profiles. However, the turbulence intensity is increasing with additional heating in the experiment, while gyrokinetic simulations show a decrease.

Refluxed electrons direct laser acceleration in ultrahigh laser and relativistic critical density plasma interaction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, J.; Science and Technology on Plasma Physics Laboratory, China Academy of Engineering Physics, P.O. Box 919-986, Mianyang 621900; Zhao, Z. Q.

2015-01-15

Refluxed electrons direct laser acceleration is proposed so as to generate a high-charge energetic electron beam. When a laser pulse is incident on a relativistic critical density target, the rising edge of the pulse heats the target and the sheath fields on the both sides of the target reflux some electrons inside the expanding target. These electrons can be trapped and accelerated due to the self-transparency and the negative longitudinal electrostatic field in the expanding target. Some of the electrons can be accelerated to energies exceeding the ponderomotive limit 1/2a{sub 0}{sup 2}mc{sup 2}. Effective temperature significantly above the ponderomotive scalingmore » is observed. Furthermore, due to the limited expanding length, the laser propagating instabilities are suppressed in the interaction. Thus, high collimated beams with tens of μC charge can be generated.« less

Phase space holes and synchronized BGK modes in autoresonantly driven, Penning-trapped electron clouds

NASA Astrophysics Data System (ADS)

Friedland, Lazar; Fajans, Joel; Bertsche, Will; Wurtele, Jonathan

2003-10-01

We study excitation and control of BGK modes in pure electron plasmas in a Penning trap. We apply an oscillating external potential with a negatively chirped frequency. This drive resonates with, and phase-locks to, a group of axially bouncing electrons in the trap. All initially phase-locked electrons remain phase-locked during the chirp (the autoresonance phenomenon), while some new particles are added to the resonant group, as the bucket moves through the phase space. This creates an oscillating in space and slowly evolving in energy hole in the phase space distribution of the electrons. The electron density perturbation associated with this evolving hole yields a BGK mode synchronized with the drive. The local depth of the hole in phase space, and, thus, the amplitude of the mode are controlled by the external parameter (the driving frequency). The process is reversible, so that the BGK mode can be returned to its nearly initial state, by reversing the direction of variation of the driving frequency. A kinetic theory of this excitation process is developed. The theory uses results on passage through, and capture into, bounce resonance in the system from Monte Carlo simulations of resonant bucket dynamics. We discuss the dependence of the excited BGK mode on the drive frequency chirp rate and other plasma parameters and compare these predictions with experiments.

Nonlinear Upshift of Trapped Electron Mode Critical Density Gradient: Simulation and Experiment

NASA Astrophysics Data System (ADS)

Ernst, D. R.

2012-10-01

A new nonlinear critical density gradient for pure trapped electron mode (TEM) turbulence increases strongly with collisionality, saturating at several times the linear threshold. The nonlinear TEM threshold appears to limit the density gradient in new experiments subjecting Alcator C-Mod internal transport barriers to modulated radio-frequency heating. Gyrokinetic simulations show the nonlinear upshift of the TEM critical density gradient is associated with long-lived zonal flow dominated states [1]. This introduces a strong temperature dependence that allows external RF heating to control TEM turbulent transport. During pulsed on-axis heating of ITB discharges, core electron temperature modulations of 50% were produced. Bursts of line-integrated density fluctuations, observed on phase contrast imaging, closely follow modulations of core electron temperature inside the ITB foot. Multiple edge fluctuation measurements show the edge response to modulated heating is out of phase with the core response. A new limit cycle stability diagram shows the density gradient appears to be clamped during on-axis heating by the nonlinear TEM critical density gradient, rather than by the much lower linear threshold. Fluctuation wavelength spectra will be quantitatively compared with nonlinear TRINITY/GS2 gyrokinetic transport simulations, using an improved synthetic diagnostic. In related work, we are implementing the first gyrokinetic exact linearized Fokker Planck collision operator [2]. Initial results show short wavelength TEMs are fully stabilized by finite-gyroradius collisional effects for realistic collisionalities. The nonlinear TEM threshold and its collisionality dependence may impact predictions of density peaking based on quasilinear theory, which excludes zonal flows.[4pt] In collaboration with M. Churchill, A. Dominguez, C. L. Fiore, Y. Podpaly, M. L. Reinke, J. Rice, J. L. Terry, N. Tsujii, M. A. Barnes, I. Bespamyatnov, R. Granetz, M. Greenwald, A. Hubbard, J. W. Hughes, M. Landreman, B. Li, Y. Ma, P. Phillips, M. Porkolab, W. Rowan, S. Wolfe, and S. Wukitch.[4pt] [1] D. R. Ernst et al., Proc. 21st IAEA Fusion Energy Conference, Chengdu, China, paper IAEA-CN-149/TH/1-3 (2006). http://www-pub.iaea.org/MTCD/Meetings/FEC200/th1-3.pdf[0pt] [2] B. Li and D.R. Ernst, Phys. Rev. Lett. 106, 195002 (2011).

Fourier-Legendre expansion of the one-electron density matrix of ground-state two-electron atoms.

PubMed

Ragot, Sébastien; Ruiz, María Belén

2008-09-28

The density matrix rho(r,r(')) of a spherically symmetric system can be expanded as a Fourier-Legendre series of Legendre polynomials P(l)(cos theta=rr(')rr(')). Application is here made to harmonically trapped electron pairs (i.e., Moshinsky's and Hooke's atoms), for which exact wavefunctions are known, and to the helium atom, using a near-exact wavefunction. In the present approach, generic closed form expressions are derived for the series coefficients of rho(r,r(')). The series expansions are shown to converge rapidly in each case, with respect to both the electron number and the kinetic energy. In practice, a two-term expansion accounts for most of the correlation effects, so that the correlated density matrices of the atoms at issue are essentially a linear functions of P(l)(cos theta)=cos theta. For example, in the case of Hooke's atom, a two-term expansion takes in 99.9% of the electrons and 99.6% of the kinetic energy. The correlated density matrices obtained are finally compared to their determinantal counterparts, using a simplified representation of the density matrix rho(r,r(')), suggested by the Legendre expansion. Interestingly, two-particle correlation is shown to impact the angular delocalization of each electron, in the one-particle space spanned by the r and r(') variables.

The concept of quasi-tissue-equivalent nanodosimeter based on the glow peak 5a/5 in LiF:Mg,Ti (TLD-100).

PubMed

Oster, L; Horowitz, Y S; Biderman, S; Haddad, J

2003-12-01

We demonstrate the viability of the concept of using existing molecular nanostructures in thermoluminescent solid-state materials as solid-state nanodosimeters. The concept is based on mimicking radiobiology (specifically the ionization density dependence of double strand breaks in DNA) by using the similar ionization density dependence of simultaneous electron-hole capture in spatially correlated trapping and luminescent centres pairs in the thermoluminescence of LiF:Mg,Ti. This simultaneous electron-hole capture has been shown to lead to ionization density dependence in the relative intensity of peak 5a to peak 5 similar to the ratio of double-strand breaks to single-strand breaks for low energy He ions.

Extraction of sub-gap density of states via capacitance-voltage measurement for the erasing process in a TFT charge-trapping memory

NASA Astrophysics Data System (ADS)

Chiang, Yen-Chang; Hsiao, Yang-Hsuan; Li, Jeng-Ting; Chen, Jen-Sue

2018-02-01

Charge-trapping memories (CTMs) based on zinc tin oxide (ZTO) semiconductor thin-film transistors (TFTs) can be programmed by a positive gate voltage and erased by a negative gate voltage in conjunction with light illumination. To understand the mechanism involved, the sub-gap density of states associated with ionized oxygen vacancies in the ZTO active layer is extracted from optical response capacitance-voltage (C-V) measurements. The corresponding energy states of ionized oxygen vacancies are observed below the conduction band minimum at approximately 0.5-1.0 eV. From a comparison of the fitted oxygen vacancy concentration in the CTM-TFT after the light-bias erasing operation, it is found that the pristine-erased device contains more oxygen vacancies than the program-erased device because the trapped electrons in the programmed device are pulled into the active layer and neutralized by the oxygen vacancies that are present there.

Determination of Charge-Carrier Mobility in Disordered Thin-Film Solar Cells as a Function of Current Density

NASA Astrophysics Data System (ADS)

Mäckel, Helmut; MacKenzie, Roderick C. I.

2018-03-01

Charge-carrier mobility is a fundamental material parameter, which plays an important role in determining solar-cell efficiency. The higher the mobility, the less time a charge carrier will spend in a device and the less likely it is that it will be lost to recombination. Despite the importance of this physical property, it is notoriously difficult to measure accurately in disordered thin-film solar cells under operating conditions. We, therefore, investigate a method previously proposed in the literature for the determination of mobility as a function of current density. The method is based on a simple analytical model that relates the mobility to carrier density and transport resistance. By revising the theoretical background of the method, we clearly demonstrate what type of mobility can be extracted (constant mobility or effective mobility of electrons and holes). We generalize the method to any combination of measurements that is able to determine the mean electron and hole carrier density, and the transport resistance at a given current density. We explore the robustness of the method by simulating typical organic solar-cell structures with a variety of physical properties, including unbalanced mobilities, unbalanced carrier densities, and for high or low carrier trapping rates. The simulations reveal that near VOC and JSC , the method fails due to the limitation of determining the transport resistance. However, away from these regions (and, importantly, around the maximum power point), the method can accurately determine charge-carrier mobility. In the presence of strong carrier trapping, the method overestimates the effective mobility due to an underestimation of the carrier density.

The influence of surfaces on the transient terahertz conductivity and electron mobility of GaAs nanowires

NASA Astrophysics Data System (ADS)

Joyce, Hannah J.; Baig, Sarwat A.; Parkinson, Patrick; Davies, Christopher L.; Boland, Jessica L.; Tan, H. Hoe; Jagadish, Chennupati; Herz, Laura M.; Johnston, Michael B.

2017-06-01

Bare unpassivated GaAs nanowires feature relatively high electron mobilities (400-2100 cm2 V-1 s-1) and ultrashort charge carrier lifetimes (1-5 ps) at room temperature. These two properties are highly desirable for high speed optoelectronic devices, including photoreceivers, modulators and switches operating at microwave and terahertz frequencies. When engineering these GaAs nanowire-based devices, it is important to have a quantitative understanding of how the charge carrier mobility and lifetime can be tuned. Here we use optical-pump-terahertz-probe spectroscopy to quantify how mobility and lifetime depend on the nanowire surfaces and on carrier density in unpassivated GaAs nanowires. We also present two alternative frameworks for the analysis of nanowire photoconductivity: one based on plasmon resonance and the other based on Maxwell-Garnett effective medium theory with the nanowires modelled as prolate ellipsoids. We find the electron mobility decreases significantly with decreasing nanowire diameter, as charge carriers experience increased scattering at nanowire surfaces. Reducing the diameter from 50 nm to 30 nm degrades the electron mobility by up to 47%. Photoconductivity dynamics were dominated by trapping at saturable states existing at the nanowire surface, and the trapping rate was highest for the nanowires of narrowest diameter. The maximum surface recombination velocity, which occurs in the limit of all traps being empty, was calculated as 1.3  ×  106 cm s-1. We note that when selecting the optimum nanowire diameter for an ultrafast device, there is a trade-off between achieving a short lifetime and a high carrier mobility. To achieve high speed GaAs nanowire devices featuring the highest charge carrier mobilities and shortest lifetimes, we recommend operating the devices at low charge carrier densities.

Collective Poisson process with periodic rates: applications in physics from micro-to nanodevices.

PubMed

da Silva, Roberto; Lamb, Luis C; Wirth, Gilson Inacio

2011-01-28

Continuous reductions in the dimensions of semiconductor devices have led to an increasing number of noise sources, including random telegraph signals (RTS) due to the capture and emission of electrons by traps at random positions between oxide and semiconductor. The models traditionally used for microscopic devices become of limited validity in nano- and mesoscale systems since, in such systems, distributed quantities such as electron and trap densities, and concepts like electron mobility, become inadequate to model electrical behaviour. In addition, current experimental works have shown that RTS in semiconductor devices based on carbon nanotubes lead to giant current fluctuations. Therefore, the physics of this phenomenon and techniques to decrease the amplitudes of RTS need to be better understood. This problem can be described as a collective Poisson process under different, but time-independent, rates, τ(c) and τ(e), that control the capture and emission of electrons by traps distributed over the oxide. Thus, models that consider calculations performed under time-dependent periodic capture and emission rates should be of interest in order to model more efficient devices. We show a complete theoretical description of a model that is capable of showing a noise reduction of current fluctuations in the time domain, and a reduction of the power spectral density in the frequency domain, in semiconductor devices as predicted by previous experimental work. We do so through numerical integrations and a novel Monte Carlo Markov chain (MCMC) algorithm based on microscopic discrete values. The proposed model also handles the ballistic regime, relevant in nano- and mesoscale devices. Finally, we show that the ballistic regime leads to nonlinearity in the electrical behaviour.

Early time evolution of a chemically produced electron depletion

NASA Technical Reports Server (NTRS)

Scales, W. A.; Bernhardt, P. A.; Ganguli, G.

1995-01-01

The early time evolution of an ionospheric electron depletion produced by a radially expanding electron attachment chemical release is studied with a two-dimensional simulation model. The model includes electron attachment chemistry, incorporates fluid electrons, particle ions and neutrals, and considers the evolution in a plane perpendicular to the geomagnetic field for a low beta plasma. Timescales considered are of the order of or less than the cyclotron period of the negative ions that result as a by-product of the electron attacment reaction. This corresponds to time periods of tenths of seconds during recent experiemts. Simulation results show that a highly sheared azimuthal electron flow velocity develops in the radially expanding depletion boundary. This sheared electron flow velocity and the steep density gradients in the boundary give rise to small-scale irregulatities in the form of electron density cavities and spikes. The nonlinear evolution of these irregularities results in trapping and ultimately turbulent heating of the negative ions.

Role of turbulence regime on determining the local density gradient

DOE PAGES

Wang, X.; Mordijck, Saskia; Doyle, E. J.; ...

2017-11-16

In this study we show that the local density gradient in the plasma core depends on the calculated mode-frequency of the most unstable linear mode and reaches a maximum when this frequency is close to zero. Previous theoretical and experimental work on AUG has shown that the ratio of electron to ion temperature, and as such the frequency of the dominant linear gyrokinetic mode, affects the local density gradient close to ρ = 0.3 [1, 2]. On DIII-D we find that by adding Electron Cyclotron Heating (ECH), we modify the dominant unstable linear gyro kinetic mode from an Ion Temperaturemore » Gradient (ITG) mode to a Trapped Electron Mode (TEM), which means that the frequency of the dominant mode changes sign (from the ion to the electron direction). Local density peaking around mid-radius increases by 50% right around the cross-over between the ITG and TEM regimes. By comparing how the particle flux changes, through the derivative of the electron density, n e, with respect to time, ∂n e/∂t, we find that the particle flux also exhibits the same trend versus mode frequency. As a result, we find that the changes in local particle transport are inversely proportional to the changes in electron density, indicating that the changes are driven by a change in thermo-diffusive pinch.« less

Shallow trapping vs. deep polarons in a hybrid lead halide perovskite, CH3NH3PbI3.

PubMed

Kang, Byungkyun; Biswas, Koushik

2017-10-18

There has been considerable speculation over the nature of charge carriers in organic-inorganic hybrid perovskites, i.e., whether they are free and band-like, or they are prone to self-trapping via short range deformation potentials. Unusually long minority-carrier diffusion lengths and moderate-to-low mobilities, together with relatively few deep defects add to their intrigue. Here we implement density functional methods to investigate the room-temperature, tetragonal phase of CH 3 NH 3 PbI 3 . We compare charge localization behavior at shallow levels and associated lattice relaxation versus those at deep polaronic states. The shallow level originates from screened Coulomb interaction between the perturbed host and an excited electron or hole. The host lattice has a tendency towards forming these shallow traps where the electron or hole is localized not too far from the band edge. In contrast, there is a considerable potential barrier that must be overcome in order to initiate polaronic hole trapping. The formation of a hole polaron (I 2 - center) involves strong lattice relaxation, including large off-center displacement of the organic cation, CH 3 NH 3 + . This type of deep polaron is energetically unfavorable, and active shallow traps are expected to shape the carrier dynamics in this material.

Implications of the formation of small polarons in Li2O2 for Li-air batteries

NASA Astrophysics Data System (ADS)

Kang, Joongoo; Jung, Yoon Seok; Wei, Su-Huai; Dillon, Anne C.

2012-01-01

Lithium-air batteries (LABs) are an intriguing next-generation technology due to their high theoretical energy density of ˜11 kWh/kg. However, LABs are hindered by both poor rate capability and significant polarization in cell voltage, primarily due to the formation of Li2O2 in the air cathode. Here, by employing hybrid density functional theory, we show that the formation of small polarons in Li2O2 limits electron transport. Consequently, the low electron mobility μ = 10-10-10-9 cm2/V s contributes to both the poor rate capability and the polarization that limit the LAB power and energy densities. The self-trapping of electrons in the small polarons arises from the molecular nature of the conduction band states of Li2O2 and the strong spin polarization of the O 2p state. Our understanding of the polaronic electron transport in Li2O2 suggests that designing alternative carrier conduction paths for the cathode reaction could significantly improve the performance of LABs at high current densities.

Scattering mechanisms in shallow undoped Si/SiGe quantum wells

DOE PAGES

Laroche, Dominique; Huang, S. -H.; Nielsen, Erik; ...

2015-10-07

We report the magneto-transport study and scattering mechanism analysis of a series of increasingly shallow Si/SiGe quantum wells with depth ranging from ~ 100 nm to ~ 10 nm away from the heterostructure surface. The peak mobility increases with depth, suggesting that charge centers near the oxide/semiconductor interface are the dominant scattering source. The power-law exponent of the electron mobility versus density curve, μ ∝ n α, is extracted as a function of the depth of the Si quantum well. At intermediate densities, the power-law dependence is characterized by α ~ 2.3. At the highest achievable densities in the quantummore » wells buried at intermediate depth, an exponent α ~ 5 is observed. Lastly, we propose and show by simulations that this increase in the mobility dependence on the density can be explained by a non-equilibrium model where trapped electrons smooth out the potential landscape seen by the two-dimensional electron gas.« less

Electrochemical impedance spectroscopy for quantitative interface state characterization of planar and nanostructured semiconductor-dielectric interfaces

NASA Astrophysics Data System (ADS)

Meng, Andrew C.; Tang, Kechao; Braun, Michael R.; Zhang, Liangliang; McIntyre, Paul C.

2017-10-01

The performance of nanostructured semiconductors is frequently limited by interface defects that trap electronic carriers. In particular, high aspect ratio geometries dramatically increase the difficulty of using typical solid-state electrical measurements (multifrequency capacitance- and conductance-voltage testing) to quantify interface trap densities (D it). We report on electrochemical impedance spectroscopy (EIS) to characterize the energy distribution of interface traps at metal oxide/semiconductor interfaces. This method takes advantage of liquid electrolytes, which provide conformal electrical contacts. Planar Al2O3/p-Si and Al2O3/p-Si0.55Ge0.45 interfaces are used to benchmark the EIS data against results obtained from standard electrical testing methods. We find that the solid state and EIS data agree very well, leading to the extraction of consistent D it energy distributions. Measurements carried out on pyramid-nanostructured p-Si obtained by KOH etching followed by deposition of a 10 nm ALD-Al2O3 demonstrate the application of EIS to trap characterization of a nanostructured dielectric/semiconductor interface. These results show the promise of this methodology to measure interface state densities for a broad range of semiconductor nanostructures such as nanowires, nanofins, and porous structures.

Mechanism of high-fluence proton induced electrical degradation in AlGaN/GaN high-electron-mobility transistors

NASA Astrophysics Data System (ADS)

Lei, Zhifeng; Guo, Hongxia; Tang, Minghua; Peng, Chao; Zhang, Zhangang; Huang, Yun; En, Yunfei

2018-07-01

The effects of displacement damage induced by 3 and 6 MeV protons in AlGaN/GaN high-electron-mobility transistors (HEMTs) are investigated. For the 6 MeV protons at a dose of 5 × 1014 cm‑2, a 12% decrease in saturation current, a 3.8% decrease in the peak transconductance, a 0.3 V positive shift of the threshold voltage, and a three-to fourfold decrease in reverse gate leakage current are observed compared with the pre-irradiation values. The main degradation mechanism is considered to be the generation of deep trap states in the band gap, which remove electrons and reduce the carrier mobility in a two-dimensional electron gas (2DEG). Both the carrier removal rate and negatively charged trap density can be extracted, which shows that about 3500 proton injections lead to one carrier removal. Proton fluence and energy are found to be two key parameters that affect the degradation characteristics of irradiated GaN HEMTs.

Estimating population density for disease risk assessment: The importance of understanding the area of influence of traps using wild pigs as an example.

PubMed

Davis, Amy J; Leland, Bruce; Bodenchuk, Michael; VerCauteren, Kurt C; Pepin, Kim M

2017-06-01

Population density is a key driver of disease dynamics in wildlife populations. Accurate disease risk assessment and determination of management impacts on wildlife populations requires an ability to estimate population density alongside management actions. A common management technique for controlling wildlife populations to monitor and mitigate disease transmission risk is trapping (e.g., box traps, corral traps, drop nets). Although abundance can be estimated from trapping actions using a variety of analytical approaches, inference is limited by the spatial extent to which a trap attracts animals on the landscape. If the "area of influence" were known, abundance estimates could be converted to densities. In addition to being an important predictor of contact rate and thus disease spread, density is more informative because it is comparable across sites of different sizes. The goal of our study is to demonstrate the importance of determining the area sampled by traps (area of influence) so that density can be estimated from management-based trapping designs which do not employ a trapping grid. To provide one example of how area of influence could be calculated alongside management, we conducted a small pilot study on wild pigs (Sus scrofa) using two removal methods 1) trapping followed by 2) aerial gunning, at three sites in northeast Texas in 2015. We estimated abundance from trapping data with a removal model. We calculated empirical densities as aerial counts divided by the area searched by air (based on aerial flight tracks). We inferred the area of influence of traps by assuming consistent densities across the larger spatial scale and then solving for area impacted by the traps. Based on our pilot study we estimated the area of influence for corral traps in late summer in Texas to be ∼8.6km 2 . Future work showing the effects of behavioral and environmental factors on area of influence will help mangers obtain estimates of density from management data, and determine conditions where trap-attraction is strongest. The ability to estimate density alongside population control activities will improve risk assessment and response operations against disease outbreaks. Published by Elsevier B.V.

Measurements of trap dynamics of cold OH molecules using resonance-enhanced multiphoton ionization

NASA Astrophysics Data System (ADS)

Gray, John M.; Bossert, Jason A.; Shyur, Yomay; Lewandowski, H. J.

2017-08-01

Trapping cold, chemically important molecules with electromagnetic fields is a useful technique to study small molecules and their interactions. Traps provide long interaction times, which are needed to precisely examine these low-density molecular samples. However, the trapping fields lead to nonuniform molecular density distributions in these systems. Therefore, it is important to be able to experimentally characterize the spatial density distribution in the trap. Ionizing molecules at different locations in the trap using resonance-enhanced multiphoton ionization (REMPI) and detecting the resulting ions can be used to probe the density distribution even at the low density present in these experiments because of the extremely high efficiency of detection. Until recently, one of the most chemically important molecules, OH, did not have a convenient REMPI scheme identified. Here, we use a newly developed 1 +1' REMPI scheme to detect trapped cold OH molecules. We use this capability to measure the trap dynamics of the central density of the cloud and the density distribution. These types of measurements can be used to optimize loading of molecules into traps, as well as to help characterize the energy distribution, which is critical knowledge for interpreting molecular collision experiments.

The Pulse Response of Electrets to Energetic Ions

DTIC Science & Technology

1988-09-01

reduction in the low temperature peak for the aged sample. This change is accompanied by a significant increase in the high temperature peak. Ion...density in electron-beam charged FEP does not change under normal conditions while the hole density falls rapidly with aging . Because hole traps are...power, S, and the aver- age energy required to produce a charge carrier pair, W, are constant. By Equation 4-1, the charge, Q, produced by an emission

Kinetic Monte Carlo simulations of excitation density dependent scintillation in CsI and CsI(Tl)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Zhiguo; Williams, Richard; Grim, Joel

2013-08-15

Nonlinear quenching of electron-hole pairs in the denser regions of ionization tracks created by γ-ray and high-energy electrons is a likely cause of the light yield nonproportionality of many inorganic scintillators. Therefore, kinetic Monte Carlo (KMC) simulations were carried out to investigate the scintillation properties of pure and thallium-doped CsI as a function of electron-hole pair density. The availability of recent experimental data on the excitation density dependence of the light yield of CsI following ultraviolet excitation allowed for an improved parameterization of the interactions between self-trapped excitons (STE) in the KMC model via dipole-dipole Förster transfer. The KMC simulationsmore » reveal that nonlinear quenching occurs very rapidly (within a few picoseconds) in the early stages of the scintillation process. In addition, the simulations predict that the concentration of thallium activators can affect the extent of nonlinear quenching as it has a direct influence on the STE density through STE dissociation and electron scavenging. This improved model will enable more realistic simulations of the nonproportional γ-ray and electron response of inorganic scintillators.« less

Control of plasma properties in a short direct-current glow discharge with active boundaries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Adams, S. F.; Demidov, V. I., E-mail: vladimir.demidov@mail.wvu.edu; West Virginia University, Morgantown, West Virginia 26506

2016-02-15

To demonstrate controlling electron/metastable density ratio and electron temperature by applying negative voltages to the active (conducting) discharge wall in a low-pressure plasma with nonlocal electron energy distribution function, modeling has been performed in a short (lacking the positive-column region) direct-current glow discharge with a cold cathode. The applied negative voltage can modify the trapping of the low-energy part of the energetic electrons that are emitted from the cathode sheath and that arise from the atomic and molecular processes in the plasma within the device volume. These electrons are responsible for heating the slow, thermal electrons, while production of slowmore » electrons (ions) and metastable atoms is mostly due to the energetic electrons with higher energies. Increasing electron temperature results in increasing decay rate of slow, thermal electrons (ions), while decay rate of metastable atoms and production rates of slow electrons (ions) and metastable atoms practically are unchanged. The result is in the variation of electron/metastable density ratio and electron temperature with the variation of the wall negative voltage.« less

Effects of structure and oxygen flow rate on the photo-response of amorphous IGZO-based photodetector devices

NASA Astrophysics Data System (ADS)

Jang, Jun Tae; Ko, Daehyun; Choi, Sungju; Kang, Hara; Kim, Jae-Young; Yu, Hye Ri; Ahn, Geumho; Jung, Haesun; Rhee, Jihyun; Lee, Heesung; Choi, Sung-Jin; Kim, Dong Myong; Kim, Dae Hwan

2018-02-01

In this study, we investigated how the structure and oxygen flow rate (OFR) during the sputter-deposition affects the photo-responses of amorphous indium-gallium-zinc-oxide (a-IGZO)-based photodetector devices. As the result of comparing three types of device structures with one another, which are a global Schottky diode, local Schottky diode, and thin-film transistor (TFT), the IGZO TFT with the gate pulse technique suppressing the persistent photoconductivity (PPC) is the most promising photodetector in terms of a high photo-sensitivity and uniform sensing characteristic. In order to analyze the IGZO TFT-based photodetectors more quantitatively, the time-evolution of sub-gap density-of-states (DOS) was directly observed under photo-illumination and consecutively during the PPC-compensating period with applying the gate pulse. It shows that the increased ionized oxygen vacancy (VO2+) defects under photo-illumination was fully recovered by the positive gate pulse and even overcompensated by additional electron trapping. Based on experimentally extracted sub-gap DOS, the origin on PPC was successfully decomposed into the hole trapping and the VO ionization. Although the VO ionization is enhanced in lower OFR (O-poor) device, the PPC becomes more severe in high OFR (O-rich) device because the hole trapping dominates the PPC in IGZO TFT under photo-illumination rather than the VO ionization and more abundant holes are trapped into gate insulator and/or interface in O-rich TFTs. Similarly, the electron trapping during the PPC-compensating period with applying the positive gate pulse becomes more prominent in O-rich TFTs. It is attributed to more hole/electron traps in the gate insulator and/or interface, which is associated with oxygen interstitials, or originates from the ion bombardment-related lower quality gate oxide in O-rich devices.

Fission of Multielectron Bubbles in Liquid Helium Under Electric Fields

NASA Astrophysics Data System (ADS)

Vadakkumbatt, V.; Ghosh, A.

2017-06-01

Multielectron bubbles (MEBs) are cavities in liquid helium which contain a layer of electrons trapped within few nanometres from their inner surfaces. These bubbles are promising candidates to probe a system of interacting electrons in curved geometries, but have been subjected to limited experimental investigation. Here, we report on the observation of fission of MEBs under strong electric fields, which arises due to fast rearrangement of electrons inside the bubbles, leading to their deformation and eventually instability. We measured the electrons to be distributed unequally between the daughter bubbles which could be used to control the charge density inside MEBs.

Vacancy effects on the electronic and structural properties pentacene

NASA Astrophysics Data System (ADS)

Laraib, Iflah; Janotti, Anderson

Defects in organic crystals are likely to affect charge transport in organic electronic devices. Vacancies can create lattice distortions and modify electronic states associated with the molecules in its surrounding. Spectroscopy experiments indicate that molecular vacancies trap charge carriers. Experimental characterization of individual defects is challenging and unambiguous. Here we use density functional calculations including van der Waals interactions in a supercell approach to study the single vacancy in pentacene, a prototype organic semiconductor. We determine formation energies, local lattice relaxations, and discuss how vacancies locally distort the lattice and affect the electronic properties of the host organic semiconductor.

Positron Annihilation Induced Auger Electron Spectroscopic Studies Of Reconstructed Semiconductor Surfaces

NASA Astrophysics Data System (ADS)

Fazleev, N. G.; Reed, J. A.; Starnes, S. G.; Weiss, A. H.

2011-06-01

The positron annihilation induced Auger spectrum from GaAs(100) displays six As and three Ga Auger peaks below 110 eV corresponding to M4,5VV, M2M4V, M2,3M4,5M4,5 Auger transitions for As and M2,3M4,5M4,5 Auger transitions for Ga. The integrated Auger peak intensities have been used to obtain experimental annihilation probabilities of surface trapped positrons with As 3p and 3d and Ga 3p core level electrons. PAES data is analyzed by performing calculations of positron surface and bulk states and annihilation characteristics of surface trapped positrons with relevant Ga and As core level electrons for both Ga- and As-rich (100) surfaces of GaAs, ideally terminated, non-reconstructed and with (2×8), (2×4), and (4×4) reconstructions. The orientation-dependent variations of the atomic and electron densities associated with reconstructions are found to affect localization of the positron wave function at the surface. Computed positron binding energy, work function, and annihilation characteristics demonstrate their sensitivity both to chemical composition and atomic structure of the topmost layers of the surface. Theoretical annihilation probabilities of surface trapped positrons with As 3d, 3p, and Ga 3p core level electrons are compared with the ones estimated from the measured Auger peak intensities.

Geometrical effects on the electron residence time in semiconductor nano-particles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Koochi, Hakimeh; Ebrahimi, Fatemeh, E-mail: f-ebrahimi@birjand.ac.ir; Solar Energy Research Group, University of Birjand, Birjand

2014-09-07

We have used random walk (RW) numerical simulations to investigate the influence of the geometry on the statistics of the electron residence time τ{sub r} in a trap-limited diffusion process through semiconductor nano-particles. This is an important parameter in coarse-grained modeling of charge carrier transport in nano-structured semiconductor films. The traps have been distributed randomly on the surface (r{sup 2} model) or through the whole particle (r{sup 3} model) with a specified density. The trap energies have been taken from an exponential distribution and the traps release time is assumed to be a stochastic variable. We have carried out (RW)more » simulations to study the effect of coordination number, the spatial arrangement of the neighbors and the size of nano-particles on the statistics of τ{sub r}. It has been observed that by increasing the coordination number n, the average value of electron residence time, τ{sup ¯}{sub r} rapidly decreases to an asymptotic value. For a fixed coordination number n, the electron's mean residence time does not depend on the neighbors' spatial arrangement. In other words, τ{sup ¯}{sub r} is a porosity-dependence, local parameter which generally varies remarkably from site to site, unless we are dealing with highly ordered structures. We have also examined the effect of nano-particle size d on the statistical behavior of τ{sup ¯}{sub r}. Our simulations indicate that for volume distribution of traps, τ{sup ¯}{sub r} scales as d{sup 2}. For a surface distribution of traps τ{sup ¯}{sub r} increases almost linearly with d. This leads to the prediction of a linear dependence of the diffusion coefficient D on the particle size d in ordered structures or random structures above the critical concentration which is in accordance with experimental observations.« less

Positron states and annihilation characteristics of surface-trapped positrons at the oxidized Cu(110) surface

NASA Astrophysics Data System (ADS)

Fazleev, N. G.; Olenga, Antoine; Weiss, A. H.

2013-03-01

The process by which oxide layers are formed on metal surfaces is still not well understood. In this work we present the results of theoretical studies of positron states and annihilation characteristics of surface-trapped positrons at the oxidized Cu(110) surface. An ab-initio investigation of stability and associated electronic properties of different adsorption phases of oxygen on Cu(110) has been performed on the basis of density functional theory and using DMOl3 code. The changes in the positron work function and the surface dipole moment when oxygen atoms occupy on-surface and sub-surface sites have been attributed to charge redistribution within the first two layers, buckling effects within each layer and interlayer expansion. The computed positron binding energy, positron surface state wave function, and annihilation probabilities of surface trapped positrons with relevant core electrons demonstrate their sensitivity to oxygen coverage, elemental content, atomic structure of the topmost layers of surfaces, and charge transfer effects. Theoretical results are compared with experimental data obtained from studies of oxidized transition metal surfaces using positron annihilation induced Auger electron spectroscopy. This work was supported in part by the National Science Foundation Grant DMR-0907679.

Mechanism of phosphorus passivation of near-interface oxide traps in 4H–SiC MOS devices investigated by CCDLTS and DFT calculation

NASA Astrophysics Data System (ADS)

Jayawardena, Asanka; Shen, X.; Mooney, P. M.; Dhar, Sarit

2018-06-01

Interfacial charge trapping in 4H–SiC MOS capacitors with P doped SiO2 or phospho-silicate glass (PSG) as a gate dielectric has been investigated with temperature dependent capacitance–voltage measurements and constant capacitance deep level transient spectroscopy (CCDLTS) measurements. The measurements indicate that P doping in the dielectric results in significant reduction of near-interface electron traps that have energy levels within 0.5 eV of the 4H–SiC conduction band edge. Extracted trap densities confirm that the phosphorus induced near-interface trap reduction is significantly more effective than interfacial nitridation, which is typically used for 4H–SiC MOSFET processing. The CCDLTS measurements reveal that the two broad near-interface trap peaks, named ‘O1’ and ‘O2’, with activation energies around 0.15 eV and 0.4 eV below the 4H–SiC conduction band that are typically observed in thermal oxides on 4H–SiC, are also present in PSG devices. Previous atomic scale ab initio calculations suggested these O1 and O2 traps to be carbon dimers substituted for oxygen dimers (CO=CO) and interstitial Si (Sii) in SiO2, respectively. Theoretical considerations in this work suggest that the presence of P in the near-interfacial region reduces the stability of the CO=CO defects and reduces the density of Sii defects through the network restructuring. Qualitative comparison of results in this work and reported work suggest that the O1 and O2 traps in SiO2/4H–SiC MOS system negatively impact channel mobility in 4H–SiC MOSFETs.

Spatial Control of Laser Wakefield Accelerated Electron Beams

NASA Astrophysics Data System (ADS)

Maksimchuk, A.; Behm, K.; Zhao, T.; Joglekar, A. S.; Hussein, A.; Nees, J.; Thomas, A. G. R.; Krushelnick, K.; Elle, J.; Lucero, A.; Samarin, G. M.; Sarry, G.; Warwick, J.

2017-10-01

The laser wakefield experiments to study and control spatial properties of electron beams were performed using HERCULES laser at the University of Michigan at power of 100 TW. In the first experiment multi-electron beam generation was demonstrated using co-propagating, parallel laser beams with a π-phase shift mirror and showing that interaction between the wakefields can cause injection to occur for plasma and laser parameters in which a single wakefield displays no significant injection. In the second experiment a magnetic triplet quadrupole system was used to refocus and stabilize electron beams at the distance of 60 cm from the interaction region. This produced a 10-fold increase in remote gamma-ray activation of 63Cu using a lead converter. In the third experiment measurements of un-trapped electrons with high transverse momentum produce a 500 mrad (FWHM) ring. This ring is formed by electrons that receive a forward momentum boost by traversing behind the bubble and its size is inversely proportional to the plasma density. The characterization of divergence and charge of this electron ring may reveal information about the wakefield structure and trapping potential. Supported by U.S. Department of Energy and the National Nuclear Security Administration and Air Force Office of Scientific Research.

Solar cyclic behavior of trapped energetic electrons in Earth's inner radiation belt

NASA Astrophysics Data System (ADS)

Abel, Bob; Thorne, Richard M.

1994-10-01

Magnetic electron spectrometer data from six satellites (OV3-3, OV1-14, OGO 5, S3-2, S3-3, and CRRES) have been used to study long-term (1966-1991) behavior of trapped energetic electrons in the inner radiation belt. Comparison of the observed energy spectra at L equal to or greater than 1.35 for different phases of the solar cycle reveals a clear trend toward enhanced fluxes during periods of solar maximum for energies below a few hundred keV; we suggest that this is caused by an increase in the rate of inward radial diffusion from a source at higher L. In contrast, for L less than 1.30, where atmospheric collisions become increasingly important, the electron flux is reduced during solar maximum; we attribute this to the expected increase in upper atmospheric densities. The electron flux above 1 MeV exhibits a systematic decay beyond 1979 to values well below the current NASA AE-8 model. This indicates that the natural background of high-energy electrons has previously been overestimated due to the long lasting presence of electrons produced by nuclear detonations in the upper atmosphere in the late 1950s and early 1960s.

Solar cyclic behavior of trapped energetic electrons in Earth's inner radiation belt

NASA Technical Reports Server (NTRS)

Abel, Bob; Thorne, Richard M.

1994-01-01

Magnetic electron spectrometer data from six satellites (OV3-3, OV1-14, OGO 5, S3-2, S3-3, and CRRES) have been used to study long-term (1966-1991) behavior of trapped energetic electrons in the inner radiation belt. Comparison of the observed energy spectra at L equal to or greater than 1.35 for different phases of the solar cycle reveals a clear trend toward enhanced fluxes during periods of solar maximum for energies below a few hundred keV; we suggest that this is caused by an increase in the rate of inward radial diffusion from a source at higher L. In contrast, for L less than 1.30, where atmospheric collisions become increasingly important, the electron flux is reduced during solar maximum; we attribute this to the expected increase in upper atmospheric densities. The electron flux above 1 MeV exhibits a systematic decay beyond 1979 to values well below the current NASA AE-8 model. This indicates that the natural background of high-energy electrons has previously been overestimated due to the long lasting presence of electrons produced by nuclear detonations in the upper atmosphere in the late 1950s and early 1960s.

Observation of Trapped-Electron Mode Microturbulence in Improved Confinement Reversed-Field Pinch Plasmas

NASA Astrophysics Data System (ADS)

Duff, James R.

This is a dissertation for the completion of a Doctorate of Philosophy in Physics degree granted at the University of Wisconsin-Madison. Density fluctuations in the large-density-gradient region of improved confinement Madison Sym- metric Torus (MST) RFP plasmas exhibit multiple features that are characteristic of the trapped- electron mode (TEM). In fusion relevant plasmas, thermal transport is a key avenue of research in order to achieve a burning plasma. In the reversed field pinch (RFP) magnetic geometry, the dy- namics of conventional plasma discharges are primarily governed by magnetic stochasticity stem- ming from multiple long-wavelength tearing modes, that sustain the RFP discharge but have an adverse effect on the plasma confinement. Using inductive current profile control, these tearing modes are reduced, and global confinement is increased to that expected for comparable tokamak plasma. Under these conditions with certain plasma equilibria, new short-wavelength fluctuations distinct from global tearing modes appear in the spectrum at frequencies f 50 kHz that have normalized perpendicular wavenumbers k⊥rhos ≤ 0.2, and propagate in the electron diamagnetic drift direction. By adjusting the plasma current or the inductive suppression, there are observable variations in the spectral features. They exhibit a critical-gradient threshold, and the fluctuation amplitude increases with a local density gradient dependent parameter. These characteristics are consistent with the predictions of unstable TEMs based on gyrokinetic analysis using the GENE code. This thesis represents the first observation and description of TEM-like instabilities in the RFP geometry.

Probing vacancy-type free-volume defects in Li2B4O7 single crystal by positron annihilation lifetime spectroscopy

NASA Astrophysics Data System (ADS)

Shpotyuk, O.; Adamiv, V.; Teslyuk, I.; Ingram, A.; Demchenko, P.

2018-01-01

Vacancy-type free-volume defects in lithium tetraborate Li2B4O7 single crystal, grown by the Czochralski technique, are probed with positron annihilation spectroscopy in the lifetime measuring mode. The experimental positron lifetime spectrum is reconstructed within the three-component fitting, involving channels of positron and positronium Ps trapping, as well as within the two-component fitting with a positronium-compensating source input. Structural configurations of the most efficient positron traps are considered using the crystallographic specificity of lithium tetraborate with the main accent on cation-type vacancies. Possible channels of positron trapping are visualized using the electronic structure calculations with density functional theory at the basis of structural parameters proper to Li2B4O7. Spatially-extended positron-trapping complexes involving singly-ionized lithium vacancies, with character lifetime close to 0.32 ns, are responsible for positron trapping in the nominally undoped lithium tetraborate Li2B4O7 crystal.

Electron acceleration in downward auroral field-aligned currents

NASA Astrophysics Data System (ADS)

Cran-McGreehin, Alexandra P.; Wright, Andrew N.

2005-10-01

The auroral downward field-aligned current is mainly carried by electrons accelerated up from the ionosphere into the magnetosphere along magnetic field lines. Current densities are typically of the order of a few μ Am-2, and the associated electrons are accelerated to energies of several hundred eV up to a few keV. This downward current has been modeled by Temerin and Carlson (1998) using an electron fluid. This paper extends that model by describing the electron populations via distribution functions and modeling all of the F region. We assume a given ion density profile, and invoke quasi-neutrality to solve for the potential along the field line. Several important locations and quantities emerge from this model: the ionospheric trapping point, below which the ionospheric population is trapped by an ambipolar electric field; the location of maximum E∥, of the order of a few mVm-1, which lies earthward of the B/n peak; the acceleration region, located around the B/n peak, which normally extends between altitudes of 500 and 3000 km; and the total potential increase along the field line, of the order of a few hundred V up to several kV. The B/n peak is found to be the central factor determining the altitude and magnitude of the accelerating potential required. Indeed, the total potential drop is found to depend solely on the equilibrium properties in the immediate vicinity of the B/n peak.

Soft-type trap-induced degradation of MoS2 field effect transistors.

PubMed

Cho, Young-Hoon; Ryu, Min-Yeul; Lee, Kook Jin; Park, So Jeong; Choi, Jun Hee; Lee, Byung-Chul; Kim, Wungyeon; Kim, Gyu-Tae

2018-06-01

The practical applicability of electronic devices is largely determined by the reliability of field effect transistors (FETs), necessitating constant searches for new and better-performing semiconductors. We investigated the stress-induced degradation of MoS 2 multilayer FETs, revealing a steady decrease of drain current by 56% from the initial value after 30 min. The drain current recovers to the initial state when the transistor is completely turned off, indicating the roles of soft-traps in the apparent degradation. The noise current power spectrum follows the model of carrier number fluctuation-correlated mobility fluctuation (CNF-CMF) regardless of stress time. However, the reduction of the drain current was well fitted to the increase of the trap density based on the CNF-CMF model, attributing the presence of the soft-type traps of dielectric oxides to the degradation of the MoS 2 FETs.

Soft-type trap-induced degradation of MoS2 field effect transistors

NASA Astrophysics Data System (ADS)

Cho, Young-Hoon; Ryu, Min-Yeul; Lee, Kook Jin; Park, So Jeong; Choi, Jun Hee; Lee, Byung-Chul; Kim, Wungyeon; Kim, Gyu-Tae

2018-06-01

The practical applicability of electronic devices is largely determined by the reliability of field effect transistors (FETs), necessitating constant searches for new and better-performing semiconductors. We investigated the stress-induced degradation of MoS2 multilayer FETs, revealing a steady decrease of drain current by 56% from the initial value after 30 min. The drain current recovers to the initial state when the transistor is completely turned off, indicating the roles of soft-traps in the apparent degradation. The noise current power spectrum follows the model of carrier number fluctuation–correlated mobility fluctuation (CNF–CMF) regardless of stress time. However, the reduction of the drain current was well fitted to the increase of the trap density based on the CNF–CMF model, attributing the presence of the soft-type traps of dielectric oxides to the degradation of the MoS2 FETs.

Atom-atom inelastic collisions and three-body atomic recombination in weakly ionized argon plasmas

NASA Technical Reports Server (NTRS)

Braun, C. G.; Kunc, J. A.

1989-01-01

A stationary collisional-radiative model including both inelastic electron-atom and atom-atom collisions is used to examine nonequilibrium weakly ionized argon plasmas with atomic densities 10 to the 16th to 10 to the 20th/cu cm, temperatures below 6000 K, and with different degrees of radiation trapping. It is shown that three-body atomic recombination becomes important at high particle densities. Comparison is made between the present approach and Thomson's theory for atomic recombination.

Structural Defects in Donor-Acceptor Blends: Influence on the Performance of Organic Solar Cells

NASA Astrophysics Data System (ADS)

Sergeeva, Natalia; Ullbrich, Sascha; Hofacker, Andreas; Koerner, Christian; Leo, Karl

2018-02-01

Defects play an important role in the performance of organic solar cells. The investigation of trap states and their origin can provide ways to further improve their performance. Here, we investigate defects in a system composed of the small-molecule oligothiophene derivative DCV5T-Me blended with C60 , which shows power conversion efficiencies above 8% when used in a solar cell. From a reconstruction of the density of trap states by impedance spectroscopy, we obtain a Gaussian distribution of trap states with Et=470 meV below the electron transport level, Nt=8 ×1014 cm-3 , and σt=41 meV . From Voc vs illumination intensity and open-circuit corrected charge carrier extraction measurements, we find that these defects lead to trap-assisted recombination. Moreover, drift-diffusion simulations show that the trap states decrease the fill factor by 10%. By conducting degradation measurements and varying the blend ratio, we find that the observed trap states are structural defects in the C60 phase due to the distortion of the natural morphology induced by the mixing.

Solution-Processed Organic and Halide Perovskite Transistors on Hydrophobic Surfaces.

PubMed

Ward, Jeremy W; Smith, Hannah L; Zeidell, Andrew; Diemer, Peter J; Baker, Stephen R; Lee, Hyunsu; Payne, Marcia M; Anthony, John E; Guthold, Martin; Jurchescu, Oana D

2017-05-31

Solution-processable electronic devices are highly desirable due to their low cost and compatibility with flexible substrates. However, they are often challenging to fabricate due to the hydrophobic nature of the surfaces of the constituent layers. Here, we use a protein solution to modify the surface properties and to improve the wettability of the fluoropolymer dielectric Cytop. The engineered hydrophilic surface is successfully incorporated in bottom-gate solution-deposited organic field-effect transistors (OFETs) and hybrid organic-inorganic trihalide perovskite field-effect transistors (HTP-FETs) fabricated on flexible substrates. Our analysis of the density of trapping states at the semiconductor-dielectric interface suggests that the increase in the trap density as a result of the chemical treatment is minimal. As a result, the devices exhibit good charge carrier mobilities, near-zero threshold voltages, and low electrical hysteresis.

Pinning of topological solitons at extrinsic defects in a quasi one-dimensional charge density wave

NASA Astrophysics Data System (ADS)

Razzaq, Samad; Wippermann, Stefan; Tae Hwan Kim Collaboration; Han Woong Yeom Collaboration

Quasi one-dimensional (1D) electronic systems are known to exhibit exotic physical phenomena, such as, e.g., Jahn Teller distortions, charge density wave (CDW) formation and non-Fermi liquid behavior. Solitonic excitations of the charge density wave ordered ground state and associated topological edge states in atomic wires are presently the focus of increasing attention. We carried out a combined ab initio and scanning tunneling microscopy (STM) study of solitonic and non-solitonic phase defects in the In/Si(111) atomic wire array. While free solitons move too fast to be imaged directly in STM, they can become trapped at extrinsic de- fects within the wire. We discuss the detailed atomistic structure of the responsible extrinsic defects and trapped solitons. Our study highlights the key role of coupled theory-experimental investigations in order to understand also the elusive fast moving solitons. S. W. gratefully acknowledges financial support from the German Research Foundation (DFG), Grant No. FOR1700.

Formation of Ultrarelativistic Electron Rings from a Laser-Wakefield Accelerator.

PubMed

Pollock, B B; Tsung, F S; Albert, F; Shaw, J L; Clayton, C E; Davidson, A; Lemos, N; Marsh, K A; Pak, A; Ralph, J E; Mori, W B; Joshi, C

2015-07-31

Ultrarelativistic-energy electron ring structures have been observed from laser-wakefield acceleration experiments in the blowout regime. These electron rings had 170-280 MeV energies with 5%-25% energy spread and ∼10  pC of charge and were observed over a range of plasma densities and compositions. Three-dimensional particle-in-cell simulations show that laser intensity enhancement in the wake leads to sheath splitting and the formation of a hollow toroidal pocket in the electron density around the wake behind the first wake period. If the laser propagates over a distance greater than the ideal dephasing length, some of the dephasing electrons in the second period can become trapped within the pocket and form an ultrarelativistic electron ring that propagates in free space over a meter-scale distance upon exiting the plasma. Such a structure acts as a relativistic potential well, which has applications for accelerating positively charged particles such as positrons.

Camera traps and activity signs to estimate wild boar density and derive abundance indices.

PubMed

Massei, Giovanna; Coats, Julia; Lambert, Mark Simon; Pietravalle, Stephane; Gill, Robin; Cowan, Dave

2018-04-01

Populations of wild boar and feral pigs are increasing worldwide, in parallel with their significant environmental and economic impact. Reliable methods of monitoring trends and estimating abundance are needed to measure the effects of interventions on population size. The main aims of this study, carried out in five English woodlands were: (i) to compare wild boar abundance indices obtained from camera trap surveys and from activity signs; and (ii) to assess the precision of density estimates in relation to different densities of camera traps. For each woodland, we calculated a passive activity index (PAI) based on camera trap surveys, rooting activity and wild boar trails on transects, and estimated absolute densities based on camera trap surveys. PAIs obtained using different methods showed similar patterns. We found significant between-year differences in abundance of wild boar using PAIs based on camera trap surveys and on trails on transects, but not on signs of rooting on transects. The density of wild boar from camera trap surveys varied between 0.7 and 7 animals/km 2 . Increasing the density of camera traps above nine per km 2 did not increase the precision of the estimate of wild boar density. PAIs based on number of wild boar trails and on camera trap data appear to be more sensitive to changes in population size than PAIs based on signs of rooting. For wild boar densities similar to those recorded in this study, nine camera traps per km 2 are sufficient to estimate the mean density of wild boar. © 2017 Crown copyright. Pest Management Science © 2017 Society of Chemical Industry. © 2017 Crown copyright. Pest Management Science © 2017 Society of Chemical Industry.

Spectroscopic analysis of electron trapping levels in pentacene field-effect transistors

NASA Astrophysics Data System (ADS)

Park, Chang Bum

2014-08-01

Electron trapping phenomena have been investigated with respect to the energy levels of localized trap states and bias-induced device instability effects in pentacene field-effect transistors. The mechanism of the photoinduced threshold voltage shift (ΔVT) is presented by providing a ΔVT model governed by the electron trapping. The trap-and-release behaviour functionalized by photo-irradiation also shows that the trap state for electrons is associated with the energy levels in different positions in the forbidden gap of pentacene. Spectroscopic analysis identifies two kinds of electron trap states distributed above and below the energy of 2.5 eV in the band gap of the pentacene crystal. The study of photocurrent spectra shows the specific trap levels of electrons in energy space that play a substantial role in causing device instability. The shallow and deep trapping states are distributed at two centroidal energy levels of ˜1.8 and ˜2.67 eV in the pentacene band gap. Moreover, we present a systematic energy profile of electron trap states in the pentacene crystal for the first time.

Self-trapping of a light particle in a dense fluid: Application of scaled density-functional theory to the decay of orthopositronium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Reese, T.; Miller, B.N.

1990-11-15

The localization of a light particle (e.g., electron, positron, or positronium atom) in a fluid is known as self-trapping. In an earlier paper (B. N. Miller and T. L. Reese, Phys. Rev. A 39, 4735 (1989)) we showed that (1) the density-functional theories (DFT's) of self-trapping could be derived from a mesoscopic model that employs a quantum-mechanical description of the light particle and a classical description of the fluid, and (2) the application of scaling to the simplest variant of DFT results in a universal model for all fluids that obey the principle of corresponding states. In this paper wemore » apply the fully scaled theory to the pickoff annihilation of orthopositronium. Predictions of three different versions of the theory are compared with the experimental measurements of McNutt and Sharma on ethane (J. Chem. Phys. 68, 130 (1978)) and Tuomisaari, Rytsola, and Hautojarvi on argon (Phys. Lett. 112A, 279 (1988)). Best agreement is obtained from a model that incorporates transitions between localized and extended states.« less

Vacancy defects in electron-irradiated ZnO studied by Doppler broadening of annihilation radiation

NASA Astrophysics Data System (ADS)

Chen, Z. Q.; Betsuyaku, K.; Kawasuso, A.

2008-03-01

Vacancy defects in ZnO induced by electron irradiation were characterized by the Doppler broadening of annihilation radiation measurements together with the local density approximation calculations. Zinc vacancies (VZn) are responsible for positron trapping in the as-irradiated state. These are annealed out below 200°C . The further annealing at 400°C results in the formation of secondary defects attributed to the complexes composed of zinc vacancies and zinc antisites (VZn-ZnO) .

Effect of Variation of Silicon Nitride Passivation Layer on Electron Irradiated Aluminum Gallium Nitride/Gallium Nitride HEMT Structures

DTIC Science & Technology

2014-06-19

the AlGaN is unintentionally doped . Figure 2.3. AlGaN/GaN band diagram showing polarization charges. The band diagram in Figure 2.3 shows...intentionally doped as are MESFETS, and the channel gets its electrons from the unintentional doping . There is less Coulomb scattering in the...temperature measurements are often used to provide spatial PL maps of doping and trap densities. Laser excitation (quasi-monochromatic) is

Uncovering the density of nanowire surface trap states hidden in the transient photoconductance.

PubMed

Xu, Qiang; Dan, Yaping

2016-09-21

The gain of nanoscale photoconductors is closely correlated with surface trap states. Mapping out the density of surface trap states in the semiconductor bandgap is crucial for engineering the performance of nanoscale photoconductors. Traditional capacitive techniques for the measurement of surface trap states are not readily applicable to nanoscale devices. Here, we demonstrate a simple technique to extract the information on the density of surface trap states hidden in the transient photoconductance that is widely observed. With this method, we found that the density of surface trap states of a single silicon nanowire is ∼10(12) cm(-2) eV(-1) around the middle of the upper half bandgap.

Study of positron annihilation with core electrons at the clean and oxygen covered Ag(001) surface

NASA Astrophysics Data System (ADS)

Joglekar, P.; Shastry, K.; Olenga, A.; Fazleev, N. G.; Weiss, A. H.

2013-03-01

In this paper we present measurements of the energy spectrum of electrons emitted as a result of Positron Annihilation Induce Auger Electron Emission from a clean and oxygen covered Ag (100) surface using a series of incident beam energies ranging from 20 eV down to 2 eV. A peak was observed at ~ 40 eV corresponding to the N23VV Auger transition in agreement with previous PAES studies. Experimental results were investigated theoretically by calculations of positron states and annihilation probabilities of surface-trapped positrons with relevant core electrons at the clean and oxygen covered Ag(100) surface. An ab-initio investigation of stability and associated electronic properties of different adsorption phases of oxygen on Ag(100) has been performed on the basis of density functional theory and using DMOl3 code. The computed positron binding energy, positron surface state wave function, and positron annihilation probabilities of surface trapped positrons with relevant core electrons demonstrate their sensitivity to oxygen coverage, elemental content, atomic structure of the topmost layers of surfaces, and charge transfer effects. Theoretical results are compared with experimental data. This work was supported in part by the National Science Foundation Grant # DMR-0907679.

Theory of type 3b solar radio bursts. [plasma interaction and electron beams

NASA Technical Reports Server (NTRS)

Smith, R. A.; Delanoee, J.

1975-01-01

During the initial space-time evolution of an electron beam injected into the corona, the strong beam-plasma interaction occurs at the head of the beam, leading to the amplification of a quasi-monochromatic large-amplitude plasma wave that stabilizes by trapping the beam particles. Oscillation of the trapped particles in the wave troughs amplifies sideband electrostatic waves. The sidebands and the main wave subsequently decay to observable transverse electromagnetic waves through the parametric decay instability. This process gives rise to the elementary striation bursts. Owing to velocity dispersion in the beam and the density gradient of the corona, the entire process may repeat at a finite number of discrete plasma levels, producing chains of elementary bursts. All the properties of the type IIIb bursts are accounted for in the context of the theory.

The influence of isomer purity on trap states and performance of organic thin-film transistors.

PubMed

Diemer, Peter J; Hayes, Jacori; Welchman, Evan; Hallani, Rawad; Pookpanratana, Sujitra J; Hacker, Christina A; Richter, Curt A; Anthony, John E; Thonhauser, Timo; Jurchescu, Oana D

2017-01-01

Organic field-effect transistor (OFET) performance is dictated by its composition and geometry, as well as the quality of the organic semiconductor (OSC) film, which strongly depends on purity and microstructure. When present, impurities and defects give rise to trap states in the bandgap of the OSC, lowering device performance. Here, 2,8-difluoro-5,11-bis(triethylsilylethynyl)-anthradithiophene is used as a model system to study the mechanism responsible for performance degradation in OFETs due to isomer coexistence. The density of trapping states is evaluated through temperature dependent current-voltage measurements, and it is discovered that OFETs containing a mixture of syn - and anti -isomers exhibit a discrete trapping state detected as a peak located at ~ 0.4 eV above the valence-band edge, which is absent in the samples fabricated on single-isomer films. Ultraviolet photoelectron spectroscopy measurements and density functional theory calculations do not point to a significant difference in electronic band structure between individual isomers. Instead, it is proposed that the dipole moment of the syn -isomer present in the host crystal of the anti -isomer locally polarizes the neighboring molecules, inducing energetic disorder. The isomers can be separated by applying gentle mechanical vibrations during film crystallization, as confirmed by the suppression of the peak and improvement in device performance.

Spectroscopic investigation of oxygen- and water-induced electron trapping and charge transport instabilities in n-type polymer semiconductors.

PubMed

Di Pietro, Riccardo; Fazzi, Daniele; Kehoe, Tom B; Sirringhaus, Henning

2012-09-12

We present an optical spectroscopy study on the role of oxygen and water in electron trapping and storage/bias-stress degradation of n-type polymer field-effect transistors based on one of the most widely studied electron transporting conjugated polymers, poly{[N,N9-bis(2-octyldodecyl)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,59-(2,29-bisthiophene)} (P(NDI2OD-T2)). We combine results obtained from charge accumulation spectroscopy, which allow optical quantification of the concentration of mobile and trapped charges in the polymer film, with electrical characterization of P(NDI2OD-T2) organic field-effect transistors to study the mechanism for storage and bias-stress degradation upon exposure to dry air/oxygen and humid nitrogen/water environments, thus separating the effect of the two molecules and determining the nature of their interaction with the polymer. We find that the stability upon oxygen exposure is limited by an interaction between the neutral polymer and molecular oxygen leading to a reduction in electron mobility in the bulk of the semiconductor. We use density functional theory quantum chemical calculations to ascribe the drop in mobility to the formation of a shallow, localized, oxygen-induced trap level, 0.34 eV below the delocalized lowest unoccupied molecular orbital of P(NDI2OD-T2). In contrast, the stability of the polymer anion against water is limited by two competing reactions, one involving the electrochemical oxidation of the polymer anion by water without degradation of the polymer and the other involving a radical anion-catalyzed chemical reaction of the polymer with water, in which the electron can be recycled and lead to further degradation reactions, such that a significant portion of the film is degraded after prolonged bias stressing. Using Raman spectroscopy, we have been able to ascribe this to a chemical interaction of water with the naphthalene diimide unit of the polymer. The degradation mechanisms identified here should be considered to explain electron trapping in other rylene diimides and possibly in other classes of conjugated polymers as well.

Improving NIS Tunnel Junction Refrigerators: Modeling, Materials, and Traps

NASA Astrophysics Data System (ADS)

O'Neil, Galen Cascade

This thesis presents a systematic study of electron cooling with Normal-metal/insulator/superconductor (NIS) tunnel junctions. NIS refrigerators have an exciting potential to simplify 100 mK and 10 mK cryogenics. Rather than using an expensive dilution refrigerator, researchers will be able to use much simpler cryogenics to reach 300 mK and supplement them with mass fabricated thin-film NIS refrigerators to reach 100 mK and below. The mechanism enabling NIS refrigeration is energy selective tunneling. Due to the gap in the superconducting density of states, only hot electrons tunnel from the normal-metal. Power is removed from the normal-metal, that same power and the larger IV power are both deposited in the superconductor. NIS refrigerators often cool less than theory predicts because of the power deposited in the superconductor returns to the normal-metal. When the superconductor temperature is raised, or athermal phonons due to quasiparticle recombination are absorbed in the normal-metal, refrigerator performance will be reduced. I studied the quasiparticle excitations in superconductors to develop the most complete thermal model of NIS refrigerators to date. I introduced overlayer quasiparticle traps, a new method for heatsinking the superconductor. I present measurements on NIS refrigerators with and without quasiparticle traps, to determine their effectiveness. This includes an NIS refrigerator that cools from 300 mK to 115 mK or lower, a large improvement over previous designs. I also looked into reducing the power deposited in the superconductor, by choosing the transition temperature of the superconductor based upon the NIS refrigerator launch temperature. I performed a detailed study of the density of states of superconducting AlMn alloys, demonstrating that Mn impurities behave non-magnetically in Al due to resonant scattering. The density of states remains BCS-like, but my measurements show that the deviations from a BCS density of states harm cooling in NIS refrigerators.

Radiation effects and defects in lithium borate crystals

NASA Astrophysics Data System (ADS)

Ogorodnikov, Igor N.; Poryvay, Nikita E.; Pustovarov, Vladimir A.

2010-11-01

The paper presents the results of a study of the formation and decay of lattice defects in wide band-gap optical crystals of LiB3O5 (LBO), Li2B4O7 (LTB) and Li6Gd(BO3)3 (LGBO) with a sublattice of mobile lithium cations. By means of thermoluminescence techniques, and luminescent and absorption optical spectroscopy with a nanosecond time resolution under excitation with an electron beam, it was revealed that the optical absorption in these crystals in the visible and ultraviolet spectral ranges is produced by optical hole-transitions from the local defect level to the valence band states. The valence band density of the states determines mainly the optical absorption spectral profile, and the relaxation kinetics is rated by the interdefect non-radiative tunnel recombination between the trapped-hole center and the Li0 trapped-electron centers. At 290 K, the Li0 centers are subject to thermally stimulated migration. Based on experimental results, the overall picture of thermally stimulated recombination processes with the participation of shallow traps was established for these crystals.

Investigation of gate-diode degradation in normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ťapajna, M., E-mail: milan.tapajna@savba.sk; Kuzmík, J.; Hilt, O.

2015-11-09

Gate diode conduction mechanisms were analyzed in normally-off p-GaN/AlGaN/GaN high-electron mobility transistors grown on Si wafers before and after forward bias stresses. Electrical characterization of the gate diodes indicates forward current to be limited by channel electrons injected through the AlGaN/p-GaN triangular barrier promoted by traps. On the other hand, reverse current was found to be consistent with carrier generation-recombination processes in the AlGaN layer. Soft breakdown observed after ∼10{sup 5 }s during forward bias stress at gate voltage of 7 V was attributed to formation of conductive channel in p-GaN/AlGaN gate stack via trap generation and percolation mechanism, likely due tomore » coexistence of high electric field and high forward current density. Possible enhancement of localized conductive channels originating from spatial inhomogeneities is proposed to be responsible for the degradation.« less

Dielectronic Satellite Spectra of Na-like Mo Ions Benchmarked by LLNL EBIT with Application to HED Plasmas

NASA Astrophysics Data System (ADS)

Stafford, A.; Safronova, A. S.; Kantsyrev, V. L.; Safronova, U. I.; Petkov, E. E.; Shlyaptseva, V. V.; Childers, R.; Shrestha, I.; Beiersdorfer, P.; Hell, H.; Brown, G. V.

2017-10-01

Dielectronic recombination (DR) is an important process for astrophysical and laboratory high energy density (HED) plasmas and the associated satellite lines are frequently used for plasma diagnostics. In particular, K-shell DR satellite lines were studied in detail in low-Z plasmas. L-shell Na-like spectral features from Mo X-pinches considered here represent the blend of DR and inner shell satellites and motivated the detailed study of DR at the EBIT-1 electron beam ion trap at LLNL. In these experiments the beam energy was swept between 0.6 - 2.4 keV to produce resonances at certain electron beam energies. The advantages of using an electron beam ion trap to better understand atomic processes with highly ionized ions in HED Mo plasma are highlighted. This work was supported by NNSA under DOE Grant DE-NA0002954. Work at LLNL was performed under the auspices of the U.S. DOE under Contract No. DE-AC52-07NA27344.

The effects of staggered bandgap in the InP/CdSe and CdSe/InP core/shell quantum dots.

PubMed

Kim, Sunghoon; Park, Jaehyun; Kim, Sungwoo; Jung, Won; Sung, Jaeyoung; Kim, Sang-Wook

2010-06-15

New type-II structures of CdSe/InP and InP/CdSe core-shell nanocrystals which have staggered bandgap alignment were fabricated. Using a simple model for the wave function for electrons and holes in InP/CdSe and CdSe/InP core/shell nanocrystals showed the wave function of the electron and hole spread into the shell, respectively. The probability density of the InP/CdSe and CdSe/InP core/shell QDs also showed a similar tendency. As a result, the structure exhibits increased delocalization of electrons and holes, leading to a red-shift in absorption and emission. Quantum yield increased in the InP/CdSe, however decreased in the CdSe/InP. The reason may be due to the surface trap and high activation barrier for de-trapping in the InP shell. 2010 Elsevier Inc. All rights reserved.

Femtosecond transient absorption spectroscopy of silanized silicon quantum dots

NASA Astrophysics Data System (ADS)

Kuntermann, Volker; Cimpean, Carla; Brehm, Georg; Sauer, Guido; Kryschi, Carola; Wiggers, Hartmut

2008-03-01

Excitonic properties of colloidal silicon quantum dots (Si qdots) with mean sizes of 4nm were examined using stationary and time-resolved optical spectroscopy. Chemically stable silicon oxide shells were prepared by controlled surface oxidation and silanization of HF-etched Si qdots. The ultrafast relaxation dynamics of photogenerated excitons in Si qdot colloids were studied on the picosecond time scale from 0.3psto2.3ns using femtosecond-resolved transient absorption spectroscopy. The time evolution of the transient absorption spectra of the Si qdots excited with a 150fs pump pulse at 390nm was observed to consist of decays of various absorption transitions of photoexcited electrons in the conduction band which overlap with both the photoluminescence and the photobleaching of the valence band population density. Gaussian deconvolution of the spectroscopic data allowed for disentangling various carrier relaxation processes involving electron-phonon and phonon-phonon scatterings or arising from surface-state trapping. The initial energy and momentum relaxation of hot carriers was observed to take place via scattering by optical phonons within 0.6ps . Exciton capturing by surface states forming shallow traps in the amorphous SiOx shell was found to occur with a time constant of 4ps , whereas deeper traps presumably localized in the Si-SiOx interface gave rise to exciton trapping processes with time constants of 110 and 180ps . Electron transfer from initially populated, higher-lying surface states to the conduction band of Si qdots (>2nm) was observed to take place within 400 or 700fs .

Two-component density functional theory calculations of positron lifetimes for small vacancy clusters in silicon

NASA Astrophysics Data System (ADS)

Makhov, D. V.; Lewis, Laurent J.

2005-05-01

The positron lifetimes for various vacancy clusters in silicon are calculated within the framework of the two-component electron-positron density functional theory. The effect of the trapped positron on the electron density and on the relaxation of the structure is investigated. Our calculations show that, contrary to the usual assumption, the positron-induced forces do not compensate in general for electronic inward forces. Thus, geometry optimization is required in order to determine positron lifetime accurately. For the monovacancy and the divacancy, the results of our calculations are in good agreement with the experimental positron lifetimes, suggesting that this approach gives good estimates of positron lifetimes for larger vacancy clusters, required for their correct identification with positron annihilation spectroscopy. As an application, our calculations show that fourfold trivacancies and symmetric fourfold tetravacancies have positron lifetimes similar to monovacancies and divacancies, respectively, and can thus be confused in the interpretation of positron annihilation experiments.

Trap-state-dominated suppression of electron conduction in carbon nanotube thin-film transistors.

PubMed

Qian, Qingkai; Li, Guanhong; Jin, Yuanhao; Liu, Junku; Zou, Yuan; Jiang, Kaili; Fan, Shoushan; Li, Qunqing

2014-09-23

The often observed p-type conduction of single carbon nanotube field-effect transistors is usually attributed to the Schottky barriers at the metal contacts induced by the work function differences or by the doping effect of the oxygen adsorption when carbon nanotubes are exposed to air, which cause the asymmetry between electron and hole injections. However, for carbon nanotube thin-film transistors, our contrast experiments between oxygen doping and electrostatic doping demonstrate that the doping-generated transport barriers do not introduce any observable suppression of electron conduction, which is further evidenced by the perfect linear behavior of transfer characteristics with the channel length scaling. On the basis of the above observation, we conclude that the environmental adsorbates work by more than simply shifting the Fermi level of the CNTs; more importantly, these adsorbates cause a poor gate modulation efficiency of electron conduction due to the relatively large trap state density near the conduction band edge of the carbon nanotubes, for which we further propose quantitatively that the adsorbed oxygen-water redox couple is responsible.

Plasma observations at the Earth's magnetic equator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Olsen, R.C.; Shawhan, S.D.; Gallagher, D.L.

1987-03-01

The magnetic equator provides a unique location for thermal plasma and plasma wave measurements. Plasma populations are found to be confined within a few degrees latitude of the equator, particularly the ions. The equatorially trapped ion population is found to be primarily hydrogen, and the authors find little evidence for preferential heating of heavier ions. Helium is occasionally found to be heated along with the protons, and forms about 10% of the equatorially trapped populations at such times, similar to the percentage of He{sup +} in the cold, core plasma of the plasmasphere. One case of a heated O{sup +}more » component was found; at the 0.1% level it generally comprises in the outer plasmasphere core plasma. The heated H{sup +} ions can be characterized by a bi-Maxwellian with kT{sub {parallel}} = 0.5-1.0 eV, and kT = 5-50 eV, with a density of 10-100 cm{sup {minus}3}. The total plasma density, as inferred from the plasma wave instrument measurements of the upper hybrid measurements of the upper hybrid resonance (UHR), is relatively constant with latitude, occasionally showing a local minimum at the magnetic equator, even though the ion flux has increased substantially. The first measurements of the equatorially trapped plasma and coincident UHR measurements show that the trapped plasma is a feature of the plasmapause region, found at total plasma densities of 20-200 cm{sup {minus}3}. The warm, trapped plasma is found in conjunction with equatorial noise, a plasma wave feature found at frequencies near 100 Hz, with a broad spectrum generally found between the proton gyrofrequency at the low frequency edge and the geometric mean gyrofrequency at the high frequency edge. This latter frequency is generally the lower hybrid resonance (LHR) for a proton-electron plasma. Sharp spatial boundaries are occasionally found with latitude, delimiting the equatorially trapped plasma.« less

Measurements of density dependent intensity ratios of extreme ultraviolet line emission from Fe X, XI, and XII

NASA Astrophysics Data System (ADS)

Shimizu, Erina; Ali, Safdar; Tsuda, Takashi; Sakaue, Hiroyuki A.; Kato, Daiji; Murakami, Izumi; Hara, Hirohisa; Watanabe, Tetsuya; Nakamura, Nobuyuki

2017-05-01

We report high-resolution density dependent intensity ratio measurements for middle charge states of iron in the extreme ultraviolet (EUV) spectral wavelength range of 160-200 Å. The measurements were performed at the Tokyo EBIT laboratory by employing a flat-field grazing incidence spectrometer installed on a low energy compact electron beam ion trap. The intensity ratios for several line pairs stemming from Fe X, Fe XI and Fe XII were extracted from spectra collected at the electron beam energies of 340 and 400 eV by varying the beam current between 7.5 and 12 mA at each energy. In addition, the effective electron densities were obtained experimentally by imaging the electron beam profile and ion cloud size with a pinhole camera and visible spectrometer, respectively. In this paper, the experimental results are compared with previous data from the literature and with the present calculations performed using a collisional-radiative model. Our experimental results show a rather good agreement with the calculations and previous reported results.

RF plasma modeling of the Linac4 H- ion source

NASA Astrophysics Data System (ADS)

Mattei, S.; Ohta, M.; Hatayama, A.; Lettry, J.; Kawamura, Y.; Yasumoto, M.; Schmitzer, C.

2013-02-01

This study focuses on the modelling of the ICP RF-plasma in the Linac4 H- ion source currently being constructed at CERN. A self-consistent model of the plasma dynamics with the RF electromagnetic field has been developed by a PIC-MCC method. In this paper, the model is applied to the analysis of a low density plasma discharge initiation, with particular interest on the effect of the external magnetic field on the plasma properties, such as wall loss, electron density and electron energy. The employment of a multi-cusp magnetic field effectively limits the wall losses, particularly in the radial direction. Preliminary results however indicate that a reduced heating efficiency results in such a configuration. The effect is possibly due to trapping of electrons in the multi-cusp magnetic field, preventing their continuous acceleration in the azimuthal direction.

Retention and release of hydrogen isotopes in tungsten plasma-facing components: the role of grain boundaries and the native oxide layer from a joint experiment-simulation integrated approach

NASA Astrophysics Data System (ADS)

Hodille, E. A.; Ghiorghiu, F.; Addab, Y.; Založnik, A.; Minissale, M.; Piazza, Z.; Martin, C.; Angot, T.; Gallais, L.; Barthe, M.-F.; Becquart, C. S.; Markelj, S.; Mougenot, J.; Grisolia, C.; Bisson, R.

2017-07-01

Fusion fuel retention (trapping) and release (desorption) from plasma-facing components are critical issues for ITER and for any future industrial demonstration reactors such as DEMO. Therefore, understanding the fundamental mechanisms behind the retention of hydrogen isotopes in first wall and divertor materials is necessary. We developed an approach that couples dedicated experimental studies with modelling at all relevant scales, from microscopic elementary steps to macroscopic observables, in order to build a reliable and predictive fusion reactor wall model. This integrated approach is applied to the ITER divertor material (tungsten), and advances in the development of the wall model are presented. An experimental dataset, including focused ion beam scanning electron microscopy, isothermal desorption, temperature programmed desorption, nuclear reaction analysis and Auger electron spectroscopy, is exploited to initialize a macroscopic rate equation wall model. This model includes all elementary steps of modelled experiments: implantation of fusion fuel, fuel diffusion in the bulk or towards the surface, fuel trapping on defects and release of trapped fuel during a thermal excursion of materials. We were able to show that a single-trap-type single-detrapping-energy model is not able to reproduce an extended parameter space study of a polycrystalline sample exhibiting a single desorption peak. It is therefore justified to use density functional theory to guide the initialization of a more complex model. This new model still contains a single type of trap, but includes the density functional theory findings that the detrapping energy varies as a function of the number of hydrogen isotopes bound to the trap. A better agreement of the model with experimental results is obtained when grain boundary defects are included, as is consistent with the polycrystalline nature of the studied sample. Refinement of this grain boundary model is discussed as well as the inclusion in the model of a thin defective oxide layer following the experimental observation of the presence of an oxygen layer on the surface even after annealing to 1300 K.

Estimation of density of mongooses with capture-recapture and distance sampling

USGS Publications Warehouse

Corn, J.L.; Conroy, M.J.

1998-01-01

We captured mongooses (Herpestes javanicus) in live traps arranged in trapping webs in Antigua, West Indies, and used capture-recapture and distance sampling to estimate density. Distance estimation and program DISTANCE were used to provide estimates of density from the trapping-web data. Mean density based on trapping webs was 9.5 mongooses/ha (range, 5.9-10.2/ha); estimates had coefficients of variation ranging from 29.82-31.58% (X?? = 30.46%). Mark-recapture models were used to estimate abundance, which was converted to density using estimates of effective trap area. Tests of model assumptions provided by CAPTURE indicated pronounced heterogeneity in capture probabilities and some indication of behavioral response and variation over time. Mean estimated density was 1.80 mongooses/ha (range, 1.37-2.15/ha) with estimated coefficients of variation of 4.68-11.92% (X?? = 7.46%). Estimates of density based on mark-recapture data depended heavily on assumptions about animal home ranges; variances of densities also may be underestimated, leading to unrealistically narrow confidence intervals. Estimates based on trap webs require fewer assumptions, and estimated variances may be a more realistic representation of sampling variation. Because trap webs are established easily and provide adequate data for estimation in a few sample occasions, the method should be efficient and reliable for estimating densities of mongooses.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Duan, Guo Xing; Hatchtel, Jordan; Shen, Xiao

Here, we investigate negative-bias temperature instabilities in SiGe pMOSFETs with SiO 2/HfO 2 gate dielectrics. The activation energies we measured for interface-trap charge buildup during negative-bias temperature stress were lower for SiGe channel pMOSFETs with SiO 2/HfO 2 gate dielectrics and Si capping layers than for conventional Si channel pMOSFETs with SiO 2 gate dielectrics. Electron energy loss spectroscopy and scanning transmission electron microscopy images demonstrate that Ge atoms can diffuse from the SiGe layer into the Si capping layer, which is adjacent to the SiO 2/HfO 2 gate dielectric. Density functional calculations show that these Ge atoms reduce themore » strength of nearby Si-H bonds and that Ge-H bond energies are still lower, thereby reducing the activation energy for interface-trap generation for the SiGe devices. Moreover, activation energies for oxide-trap charge buildup during negative-bias temperature stress are similarly small for SiGe pMOSFETs with SiO 2/HfO 2 gate dielectrics and Si pMOSFETs with SiO 2 gate dielectrics, suggesting that, in both cases, the oxide-trap charge buildup likely is rate-limited by hole tunneling into the near-interfacial SiO 2.« less

Canonical angular momentum compression near the Brillouin limit

NASA Astrophysics Data System (ADS)

Jeong, E.; Gilson, E.; Fajans, J.

2000-10-01

Near the Brillouin limit, the angular momentum of a trapped, T=0, pure-electron plasma approaches zero. If the plasma expands axially, its density would appear to drop. However, the plasma's canonical angular momentum is not changed by an axial expansion, so the plasma must stay near the Brillouin limit; thus the plasma's density cannot change when it is expanded. The only way for the plasma density to remain constant as the plasma length increases is for the plasma radius to decrease. Dynamically, this decrease is caused by the polarization drift induced by a small decrease in the density. In this poster we present preliminary experimental evidence demonstrating this radial compression. This work was supported by the ONR.

Direct probing of electron and hole trapping into nano-floating-gate in organic field-effect transistor nonvolatile memories

NASA Astrophysics Data System (ADS)

Cui, Ze-Qun; Wang, Shun; Chen, Jian-Mei; Gao, Xu; Dong, Bin; Chi, Li-Feng; Wang, Sui-Dong

2015-03-01

Electron and hole trapping into the nano-floating-gate of a pentacene-based organic field-effect transistor nonvolatile memory is directly probed by Kelvin probe force microscopy. The probing is straightforward and non-destructive. The measured surface potential change can quantitatively profile the charge trapping, and the surface characterization results are in good accord with the corresponding device behavior. Both electrons and holes can be trapped into the nano-floating-gate, with a preference of electron trapping than hole trapping. The trapped charge quantity has an approximately linear relation with the programming/erasing gate bias, indicating that the charge trapping in the device is a field-controlled process.

Quantitative analysis of trap states through the behavior of the sulfur ions in MoS2 FETs following high vacuum annealing

NASA Astrophysics Data System (ADS)

Bae, Hagyoul; Jun, Sungwoo; Kim, Choong-Ki; Ju, Byeong-Kwon; Choi, Yang-Kyu

2018-03-01

Few-layer molybdenum disulfide (MoS2) has attracted a great deal of attention as a semiconductor material for electronic and optoelectronic devices. However, the presence of localized states inside the bandgap is a critical issue that must be addressed to improve the applicability of MoS2 technology. In this work, we investigated the density of states (DOS: g(E)) inside the bandgap of MoS2 FET by using a current-voltage (I-V) analysis technique with the aid of high vacuum annealing (HVA). The g(E) can be obtained by combining the trap density and surface potential (ψ S) extracted from a consistent subthreshold current (I D-sub). The electrical performance of MoS2 FETs is strongly dependent on the inherent defects, which are closely related to the g(E) in the MoS2 active layer. By applying the proposed technique to the MoS2 FETs, we were able to successfully characterize the g(E) after stabilization of the traps by the HVA, which reduces the hysteresis distorting the intrinsic g(E). Also, the change of sulfur ions in MoS2 film before and after the HVA treatment is investigated directly by Auger electron spectroscopy analysis. The proposed technique provides a new methodology for active channel engineering of 2D channel based FETs such as MoS2, MoTe2, WSe2, and WS2.

Production of bare argon, manganese, iron and nickel nuclei in the Dresden EBIT

NASA Astrophysics Data System (ADS)

Kentsch, U.; Zschornack, G.; Großmann, F.; Ovsyannikov, V. P.; Ullmann, F.; Fritzsche, S.; Surzhykov, A.

2002-02-01

The production of highly charged argon, manganese, iron and nickel ions in a room-temperature electron beam ion trap (EBIT), the Dresden EBIT, has been investigated by means of energy dispersive X-ray spectroscopy of the direct excitation (DE) and radiative recombination (RR) processes. To derive the charge state distributions of the ions in the trap, direct excitation and radiative recombination cross-sections were calculated at electron energies of 8 and 14.4 keV. Based on these theoretical cross-sections and the measured X-ray spectra, the ion densities and the absolute number of ions, which are trapped in the electron beam, are determined for argon, manganese, iron and nickel. Emphasis has been paid to the highly charged ions, including the helium-like and hydrogen-like ions and bare nuclei. In the case of iron we also determined the contributions from lower ionization stages from DE transition lines. It is shown, that in the Dresden EBIT elements at least up to nickel can be fully ionized. Beside energy dispersive spectroscopy it is shown for iron by wavelength dispersive X-ray spectroscopy that with a comparably high gas pressure in the order of 10 -8 mbar carbon-, boron-, beryllium-, lithium- and helium-like iron ions can be produced.

The evolution of energetic particles and the emitted radiation in solar flares. Ph.D. Thesis

NASA Technical Reports Server (NTRS)

Lu, Edward Tsang

1989-01-01

The evolution of accelerated particle distributions in a magnetized plasma and the resulting radiation are calculated, and the results are applied to solar flares. To study the radiation on timescales of order the particle lifetimes, the evolution of the particle distribution is determined by the use of the Fokker-Planck equation including Coulomb collisions and magnetic mirroring. Analytic solution to the equations are obtained for limiting cases such as homogeneous injection in a homogeneous plasma, and for small pitch angle. These analytic solutions are then used to place constraints on flare parameters such as density, loop length, and the injection timescale for very short implusive solar flares. For general particle distributions in arbitrary magnetic field and background density, the equation is solved numerically. The relative timing of microwaves and X-rays during individual flares is investigated. A number of possible sources for excessive microwave flux are discussed including a flattening in the electron spectrum above hard X-ray energies, thermal synchrotron emission, and trapping of electron by converging magnetic fields. Over shorter timescales, the Fokker-Planck equation is solved numerically to calculate the temporal evolution of microwaves and X-rays from nonthermal thick target models. It is shown that magnetic trapping will not account for the observed correlation of microwaves of approximately 0.15 seconds behind X-rays in flares with rapid time variation, and thus higher energy electrons must be accelerated later than lower energy electrons.

40 CFR 1042.125 - Maintenance instructions.

Code of Federal Regulations, 2011 CFR

2011-07-01

... CONTROLS CONTROL OF EMISSIONS FROM NEW AND IN-USE MARINE COMPRESSION-IGNITION ENGINES AND VESSELS Emission... converters, electronic control units, particulate traps, trap oxidizers, components related to particulate..., electronic control units, particulate traps, trap oxidizers, components related to particulate traps and trap...

40 CFR 1042.125 - Maintenance instructions.

Code of Federal Regulations, 2013 CFR

2013-07-01

... CONTROLS CONTROL OF EMISSIONS FROM NEW AND IN-USE MARINE COMPRESSION-IGNITION ENGINES AND VESSELS Emission... converters, electronic control units, particulate traps, trap oxidizers, components related to particulate..., electronic control units, particulate traps, trap oxidizers, components related to particulate traps and trap...

40 CFR 1042.125 - Maintenance instructions.

Code of Federal Regulations, 2014 CFR

2014-07-01

... CONTROLS CONTROL OF EMISSIONS FROM NEW AND IN-USE MARINE COMPRESSION-IGNITION ENGINES AND VESSELS Emission... converters, electronic control units, particulate traps, trap oxidizers, components related to particulate..., electronic control units, particulate traps, trap oxidizers, components related to particulate traps and trap...

40 CFR 1042.125 - Maintenance instructions.

Code of Federal Regulations, 2012 CFR

2012-07-01

... CONTROLS CONTROL OF EMISSIONS FROM NEW AND IN-USE MARINE COMPRESSION-IGNITION ENGINES AND VESSELS Emission... converters, electronic control units, particulate traps, trap oxidizers, components related to particulate..., electronic control units, particulate traps, trap oxidizers, components related to particulate traps and trap...

A study of electrically active traps in AlGaN/GaN high electron mobility transistor

NASA Astrophysics Data System (ADS)

Yang, Jie; Cui, Sharon; Ma, T. P.; Hung, Ting-Hsiang; Nath, Digbijoy; Krishnamoorthy, Sriram; Rajan, Siddharth

2013-10-01

We have studied electron conduction mechanisms and the associated roles of the electrically active traps in the AlGaN layer of an AlGaN/GaN high electron mobility transistor structure. By fitting the temperature dependent I-V (Current-Voltage) curves to the Frenkel-Poole theory, we have identified two discrete trap energy levels. Multiple traces of I-V measurements and constant-current injection experiment all confirm that the main role of the traps in the AlGaN layer is to enhance the current flowing through the AlGaN barrier by trap-assisted electron conduction without causing electron trapping.

Self similar solution of superradiant amplification of ultrashort laser pulses in plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moghadasin, H.; Niknam, A. R., E-mail: a-niknam@sbu.ac.ir; Shokri, B.

2015-05-15

Based on the self-similar method, superradiant amplification of ultrashort laser pulses by the counterpropagating pump in a plasma is investigated. Here, we present a governing system of partial differential equations for the signal pulse and the motion of the electrons. These equations are transformed to ordinary differential equations by the self-similar method and numerically solved. It is found that the increase of the signal intensity is proportional to the square of the propagation distance and the signal frequency has a red shift. Also, depending on the pulse width, the signal breaks up into a train of short pulses or itsmore » duration decreases with the inverse square root of the distance. Moreover, we identified two distinct categories of the electrons by the phase space analysis. In the beginning, one of them is trapped in the ponderomotive potential well and oscillates while the other is untrapped. Over time, electrons of the second kind also join to the trapped electrons. In the potential well, the electrons are bunched to form an electron density grating which reflects the pump pulse into the signal pulse. It is shown that the backscattered intensity is enhanced with the increase of the electron bunching parameter which leads to the enhanced efficiency of superradiant amplification.« less

Counterintuitive electron localisation from density-functional theory with polarisable solvent models

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dale, Stephen G., E-mail: sdale@ucmerced.edu; Johnson, Erin R., E-mail: erin.johnson@dal.ca

2015-11-14

Exploration of the solvated electron phenomena using density-functional theory (DFT) generally results in prediction of a localised electron within an induced solvent cavity. However, it is well known that DFT favours highly delocalised charges, rendering the localisation of a solvated electron unexpected. We explore the origins of this counterintuitive behaviour using a model Kevan-structure system. When a polarisable-continuum solvent model is included, it forces electron localisation by introducing a strong energetic bias that favours integer charges. This results in the formation of a large energetic barrier for charge-hopping and can cause the self-consistent field to become trapped in local minimamore » thus converging to stable solutions that are higher in energy than the ground electronic state. Finally, since the bias towards integer charges is caused by the polarisable continuum, these findings will also apply to other classical polarisation corrections, as in combined quantum mechanics and molecular mechanics (QM/MM) methods. The implications for systems beyond the solvated electron, including cationic DNA bases, are discussed.« less

Cluster Observations of Non-Time Continuous Magnetosonic Waves

NASA Technical Reports Server (NTRS)

Walker, Simon N.; Demekhov, Andrei G.; Boardsen, Scott A.; Ganushkina, Natalia Y.; Sibeck, David G.; Balikhin, Michael A.

2016-01-01

Equatorial magnetosonic waves are normally observed as temporally continuous sets of emissions lasting from minutes to hours. Recent observations, however, have shown that this is not always the case. Using Cluster data, this study identifies two distinct forms of these non temporally continuous use missions. The first, referred to as rising tone emissions, are characterized by the systematic onset of wave activity at increasing proton gyroharmonic frequencies. Sets of harmonic emissions (emission elements)are observed to occur periodically in the region +/- 10 off the geomagnetic equator. The sweep rate of these emissions maximizes at the geomagnetic equator. In addition, the ellipticity and propagation direction also change systematically as Cluster crosses the geomagnetic equator. It is shown that the observed frequency sweep rate is unlikely to result from the sideband instability related to nonlinear trapping of suprathermal protons in the wave field. The second form of emissions is characterized by the simultaneous onset of activity across a range of harmonic frequencies. These waves are observed at irregular intervals. Their occurrence correlates with changes in the spacecraft potential, a measurement that is used as a proxy for electron density. Thus, these waves appear to be trapped within regions of localized enhancement of the electron density.

Modeling carbonaceous particle formation in an argon graphite cathode dc discharge

NASA Astrophysics Data System (ADS)

Michau, A.; Lombardi, G.; Colina Delacqua, L.; Redolfi, M.; Arnas, C.; Bonnin, X.; Hassouni, K.

2010-12-01

We develop a model for the nucleation, growth and transport of carbonaceous dust particles in a non-reactive gas dc discharge where the carbon source is provided by cathode sputtering. We consider only the initial phase of the discharge when the dust charge density remains small with respect to the electron density. We find that an electric field reversal at the entrance of the negative glow region promotes trapping of negatively charged clusters and dust particles, confining them for long times in the plasma and favoring molecular growth. An essential ingredient for this process is electron attachment, which negatively charges the initially neutral clusters. We perform sensitivity studies on several number parameters: size of the largest molecular edifice, sticking coefficient, etc.

Chemical Vapor-Deposited Hexagonal Boron Nitride as a Scalable Template for High-Performance Organic Field-Effect Transistors

DOE PAGES

Lee, Tae Hoon; Kim, Kwanpyo; Kim, Gwangwoo; ...

2017-02-27

Organic field-effect transistors have attracted much attention because of their potential use in low-cost, large-area, flexible electronics. High-performance organic transistors require a low density of grain boundaries in their organic films and a decrease in the charge trap density at the semiconductor–dielectric interface for efficient charge transport. In this respect, the role of the dielectric material is crucial because it primarily determines the growth of the film and the interfacial trap density. Here, we demonstrate the use of chemical vapor-deposited hexagonal boron nitride (CVD h-BN) as a scalable growth template/dielectric for high-performance organic field-effect transistors. The field-effect transistors based onmore » C60 films grown on single-layer CVD h-BN exhibit an average mobility of 1.7 cm 2 V –1 s –1 and a maximal mobility of 2.9 cm 2 V –1 s –1 with on/off ratios of 10 7. The structural and morphology analysis shows that the epitaxial, two-dimensional growth of C 60 on CVD h-BN is mainly responsible for the superior charge transport behavior. In conclusion, we believe that CVD h-BN can serve as a growth template for various organic semiconductors, allowing the development of large-area, high-performance flexible electronics.« less

Chemical Vapor-Deposited Hexagonal Boron Nitride as a Scalable Template for High-Performance Organic Field-Effect Transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Tae Hoon; Kim, Kwanpyo; Kim, Gwangwoo

Organic field-effect transistors have attracted much attention because of their potential use in low-cost, large-area, flexible electronics. High-performance organic transistors require a low density of grain boundaries in their organic films and a decrease in the charge trap density at the semiconductor–dielectric interface for efficient charge transport. In this respect, the role of the dielectric material is crucial because it primarily determines the growth of the film and the interfacial trap density. Here, we demonstrate the use of chemical vapor-deposited hexagonal boron nitride (CVD h-BN) as a scalable growth template/dielectric for high-performance organic field-effect transistors. The field-effect transistors based onmore » C60 films grown on single-layer CVD h-BN exhibit an average mobility of 1.7 cm 2 V –1 s –1 and a maximal mobility of 2.9 cm 2 V –1 s –1 with on/off ratios of 10 7. The structural and morphology analysis shows that the epitaxial, two-dimensional growth of C 60 on CVD h-BN is mainly responsible for the superior charge transport behavior. In conclusion, we believe that CVD h-BN can serve as a growth template for various organic semiconductors, allowing the development of large-area, high-performance flexible electronics.« less

The design of an electron gun switchable between immersed and Brillouin flowa)

NASA Astrophysics Data System (ADS)

Becker, R.; Kester, O.

2012-02-01

An electron gun, which can be switched from immersed flow to Brillouin flow during operation, may have advantages for charge breeders as well as for electron beam ion sources and traps (EBISTs). For EBISTs this allows to change the current density according to the repetition frequency and charge state, for charge breeders and EBISTs a lower current density in immersed flow provides higher acceptance for injected ions, while the higher current density in Brillouin flow results in shorter breeding times and a lower emittance for the extracted beam. Therefore, we have designed such a gun for an EBIS with 5 T central magnetic field and without the use of iron and moving the gun. The gun was placed in the axial fringing field of the 5 T solenoid in such a position that a gate valve can be placed between the gun and the cryostat to allow for simple maintenance. The field at the cathode surface turned out to be only 0.05 T, which is not enough to focus 50 A/cm2 at a few kV. However, if a small normal conducting solenoid is placed over the vacuum tube in position of the gun, a field of 0.1 T may be obtained. With this the use of LaB6 as cathode material results in a magnetic compression of 44 and therewith in a focused current density in the trap region of more than 2000 A/cm2. By reversing the current in the gun solenoid the cathode field can easily compensated to zero. By proper design of the electrodes and the compression region, the gun will be able to deliver a beam in Brillouin flow. While this is interesting by itself - remember the "super-compression" reported on CRYEBIS-I - any magnetic field between zero and the value for immersed flow will result in an electron beam with a wide range of adjustable high current densities. The design tools used have been INTMAG(C) for the calculation of magnetic fields, EGN2(C) for the simulation of the gun and ANALYSE(C) for detailed analysis of the results (for more information see www.egun-igun.com).

The design of an electron gun switchable between immersed and Brillouin flow.

PubMed

Becker, R; Kester, O

2012-02-01

An electron gun, which can be switched from immersed flow to Brillouin flow during operation, may have advantages for charge breeders as well as for electron beam ion sources and traps (EBISTs). For EBISTs this allows to change the current density according to the repetition frequency and charge state, for charge breeders and EBISTs a lower current density in immersed flow provides higher acceptance for injected ions, while the higher current density in Brillouin flow results in shorter breeding times and a lower emittance for the extracted beam. Therefore, we have designed such a gun for an EBIS with 5 T central magnetic field and without the use of iron and moving the gun. The gun was placed in the axial fringing field of the 5 T solenoid in such a position that a gate valve can be placed between the gun and the cryostat to allow for simple maintenance. The field at the cathode surface turned out to be only 0.05 T, which is not enough to focus 50 A∕cm(2) at a few kV. However, if a small normal conducting solenoid is placed over the vacuum tube in position of the gun, a field of 0.1 T may be obtained. With this the use of LaB(6) as cathode material results in a magnetic compression of 44 and therewith in a focused current density in the trap region of more than 2000 A∕cm(2). By reversing the current in the gun solenoid the cathode field can easily compensated to zero. By proper design of the electrodes and the compression region, the gun will be able to deliver a beam in Brillouin flow. While this is interesting by itself--remember the "super-compression" reported on CRYEBIS-I--any magnetic field between zero and the value for immersed flow will result in an electron beam with a wide range of adjustable high current densities. The design tools used have been INTMAG(C) for the calculation of magnetic fields, EGN2(C) for the simulation of the gun and ANALYSE(C) for detailed analysis of the results (for more information see www.egun-igun.com).

A spatially explicit capture-recapture estimator for single-catch traps.

PubMed

Distiller, Greg; Borchers, David L

2015-11-01

Single-catch traps are frequently used in live-trapping studies of small mammals. Thus far, a likelihood for single-catch traps has proven elusive and usually the likelihood for multicatch traps is used for spatially explicit capture-recapture (SECR) analyses of such data. Previous work found the multicatch likelihood to provide a robust estimator of average density. We build on a recently developed continuous-time model for SECR to derive a likelihood for single-catch traps. We use this to develop an estimator based on observed capture times and compare its performance by simulation to that of the multicatch estimator for various scenarios with nonconstant density surfaces. While the multicatch estimator is found to be a surprisingly robust estimator of average density, its performance deteriorates with high trap saturation and increasing density gradients. Moreover, it is found to be a poor estimator of the height of the detection function. By contrast, the single-catch estimators of density, distribution, and detection function parameters are found to be unbiased or nearly unbiased in all scenarios considered. This gain comes at the cost of higher variance. If there is no interest in interpreting the detection function parameters themselves, and if density is expected to be fairly constant over the survey region, then the multicatch estimator performs well with single-catch traps. However if accurate estimation of the detection function is of interest, or if density is expected to vary substantially in space, then there is merit in using the single-catch estimator when trap saturation is above about 60%. The estimator's performance is improved if care is taken to place traps so as to span the range of variables that affect animal distribution. As a single-catch likelihood with unknown capture times remains intractable for now, researchers using single-catch traps should aim to incorporate timing devices with their traps.

Optimising the application of multiple-capture traps for invasive species management using spatial simulation.

PubMed

Warburton, Bruce; Gormley, Andrew M

2015-01-01

Internationally, invasive vertebrate species pose a significant threat to biodiversity, agricultural production and human health. To manage these species a wide range of tools, including traps, are used. In New Zealand, brushtail possums (Trichosurus vulpecula), stoats (Mustela ermine), and ship rats (Rattus rattus) are invasive and there is an ongoing demand for cost-effective non-toxic methods for controlling these pests. Recently, traps with multiple-capture capability have been developed which, because they do not require regular operator-checking, are purported to be more cost-effective than traditional single-capture traps. However, when pest populations are being maintained at low densities (as is typical of orchestrated pest management programmes) it remains uncertain if it is more cost-effective to use fewer multiple-capture traps or more single-capture traps. To address this uncertainty, we used an individual-based spatially explicit modelling approach to determine the likely maximum animal-captures per trap, given stated pest densities and defined times traps are left between checks. In the simulation, single- or multiple-capture traps were spaced according to best practice pest-control guidelines. For possums with maintenance densities set at the lowest level (i.e. 0.5/ha), 98% of all simulated possums were captured with only a single capacity trap set at each site. When possum density was increased to moderate levels of 3/ha, having a capacity of three captures per trap caught 97% of all simulated possums. Results were similar for stoats, although only two potential captures per site were sufficient to capture 99% of simulated stoats. For rats, which were simulated at their typically higher densities, even a six-capture capacity per trap site only resulted in 80% kill. Depending on target species, prevailing density and extent of immigration, the most cost-effective strategy for pest control in New Zealand might be to deploy several single-capture traps rather than investing in fewer, but more expense, multiple-capture traps.

Trap pumping schemes for the Euclid CCD273 detector: characterisation of electrodes and defects

NASA Astrophysics Data System (ADS)

Skottfelt, J.; Hall, D. J.; Dryer, B.; Bush, N.; Campa, J.; Gow, J. P. D.; Holland, A. D.; Jordan, D.; Burt, D.

2017-12-01

The VISible imager instrument (VIS) on board the Euclid mission will deliver high resolution shape measurements of galaxies down to very faint limits (R ~ 25 at 10σ) in a large part of the sky, in order to infer the distribution of dark matter in the Universe. To help mitigate radiation damage effects that will accumulate in the detectors over the mission lifetime, the properties of the radiation induced traps needs to be known with as high precision as possible. For this purpose the trap pumping method will be employed as part of the in-orbit calibration routines. Using trap pumping it is possible to identify and characterise single traps in a Charge-Coupled Device (CCD), thus providing information such as the density, emission time constants and sub-pixel positions of the traps in the detectors. This paper presents the trap pumping algorithms used for the radiation testing campaign of the CCD273 detectors, performed by the Centre for Electronic Imaging (CEI) at the Open University, that will be used for the VIS instrument. The CCD273 is a four-phase device with uneven phase widths, which complicates the trap pumping analysis. However, we find that by optimising the trap pumping algorithms and analysis routines, it is possible to obtain sub-pixel and even sub-phase positional information about the traps. Further, by comparing trap pumping data with simulations, it is possible to gain more information about the effective electrode widths of the device.

Effect of Single-Electron Interface Trapping in Decanano MOSFETs: A 3D Atomistic Simulation Study

NASA Technical Reports Server (NTRS)

Asenov, Asen; Balasubramaniam, R.; Brown, A. R.; Davies, J. H.

2000-01-01

We study the effect of trapping/detrapping of a single-electron in interface states in the channel of n-type MOSFETs with decanano dimensions using 3D atomistic simulation techniques. In order to highlight the basic dependencies, the simulations are carried out initially assuming continuous doping charge, and discrete localized charge only for the trapped electron. The dependence of the random telegraph signal (RTS) amplitudes on the device dimensions and on the position of the trapped charge in the channel are studied in detail. Later, in full-scale, atomistic simulations assuming discrete charge for both randomly placed dopants and the trapped electron, we highlight the importance of current percolation and of traps with strategic position where the trapped electron blocks a dominant current path.

Electromagnetic radiation trapped in the magnetosphere above the plasma frequency

NASA Technical Reports Server (NTRS)

Gurnett, D. A.; Shaw, R. R.

1973-01-01

An electromagnetic noise band is frequently observed in the outer magnetosphere by the Imp 6 spacecraft at frequencies from about 5 to 20 kHz. This noise band generally extends throughout the region from near the plasmapause boundary to near the magnetopause boundary. The noise typically has a broadband field strength of about 5 microvolts/meter. The noise band often has a sharp lower cutoff frequency at about 5 to 10 kHz, and this cutoff has been identified as the local electron plasma frequency. Since the plasma frequency in the plasmasphere and solar wind is usually above 20 kHz, it is concluded that this noise must be trapped in the low-density region between the plasmapause and magnetopause boundaries. The noise bands often contain a harmonic frequency structure which suggests that the radiation is associated with harmonics of the electron cyclotron frequency.

Transparency of near-critical density plasmas under extreme laser intensities

NASA Astrophysics Data System (ADS)

Ji, Liangliang; Shen, Baifei; Zhang, Xiaomei

2018-05-01

We investigated transparency of near-critical plasma targets for highly intense incident lasers and discovered that beyond relativistic transparency, there exists an anomalous opacity regime, where the plasma target tend to be opaque at extreme light intensities. The unexpected phenomenon is found to originate from the trapping of ions under exotic conditions. We found out the propagation velocity and the amplitude of the laser-driven charge separation field in a large parameter range and derived the trapping probability of ions. The model successfully interpolates the emergence of anomalous opacity in simulations. The trend is more significant when radiation reaction comes into effect, leaving a transparency window in the intensity domain. Transparency of a plasma target defines the electron dynamics and thereby the emission mechanisms of gamma-photons in the ultra-relativistic regime. Our findings are not only of fundamental interest but also imply the proper mechanisms for generating desired electron/gamma sources.

Al{sub 2}O{sub 3}/GeO{sub x}/Ge gate stacks with low interface trap density fabricated by electron cyclotron resonance plasma postoxidation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, R.; Iwasaki, T.; Taoka, N.

2011-03-14

An electron cyclotron resonance (ECR) plasma postoxidation method has been employed for forming Al{sub 2}O{sub 3}/GeO{sub x}/Ge metal-oxide-semiconductor (MOS) structures. X-ray photoelectron spectroscopy and transmission electron microscope characterizations have revealed that a GeO{sub x} layer is formed beneath the Al{sub 2}O{sub 3} capping layer by exposing the Al{sub 2}O{sub 3}/Ge structures to ECR oxygen plasma. The interface trap density (D{sub it}) of Au/Al{sub 2}O{sub 3}/GeO{sub x}/Ge MOS capacitors is found to be significantly suppressed down to lower than 10{sup 11} cm{sup -2} eV{sup -1}. Especially, a plasma postoxidation time of as short as 10 s is sufficient to reduce D{submore » it} with maintaining the equivalent oxide thickness (EOT). As a result, the minimum D{sub it} values and EOT of 5x10{sup 10} cm{sup -2} eV{sup -1} and 1.67 nm, and 6x10{sup 10} cm{sup -2} eV{sup -1} and 1.83 nm have been realized for Al{sub 2}O{sub 3}/GeO{sub x}/Ge MOS structures with p- and n-type substrates, respectively.« less

The effects of nanoparticles and organic additives with controlled dispersion on dielectric properties of polymers: Charge trapping and impact excitation

NASA Astrophysics Data System (ADS)

Huang, Yanhui; Wu, Ke; Bell, Michael; Oakes, Andrew; Ratcliff, Tyree; Lanzillo, Nicholas A.; Breneman, Curt; Benicewicz, Brian C.; Schadler, Linda S.

2016-08-01

This work presents a comprehensive investigation into the effects of nanoparticles and organic additives on the dielectric properties of insulating polymers using reinforced silicone rubber as a model system. TiO2 and ZrO2 nanoparticles (d = 5 nm) were well dispersed into the polymer via a bimodal surface modification approach. Organic molecules with the potential of voltage stabilization were further grafted to the nanoparticle to ensure their dispersion. These extrinsic species were found to provide deep traps for charge carriers and exhibited effective charge trapping properties at a rather small concentration (˜1017 cm-3). The charge trapping is found to have the most significant effect on breakdown strength when the electrical stressing time is long enough that most charges are trapped in the deep states. To establish a quantitative correlation between the trap depth and the molecular properties, the electron affinity and ionization energy of each species were calculated by an ab initio method and were compared with the experimentally measured values. The correlation however remains elusive and is possibly complicated by the field effect and the electronic interactions between different species that are not considered in this computation. At high field, a super-linear increase of current density was observed for TiO2 filled composites and is likely caused by impact excitation due to the low excitation energy of TiO2 compared to ZrO2. It is reasoned that the hot charge carriers with energies greater than the excitation energy of TiO2 may excite an electron-hole pair upon collision with the NP, which later will be dissociated and contribute to free charge carriers. This mechanism can enhance the energy dissipation and may account for the retarded electrical degradation and breakdown of TiO2 composites.

The effects of nanoparticles and organic additives with controlled dispersion on dielectric properties of polymers: Charge trapping and impact excitation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Yanhui, E-mail: huangy12@rpi.edu; Schadler, Linda S.; Wu, Ke

This work presents a comprehensive investigation into the effects of nanoparticles and organic additives on the dielectric properties of insulating polymers using reinforced silicone rubber as a model system. TiO{sub 2} and ZrO{sub 2} nanoparticles (d = 5 nm) were well dispersed into the polymer via a bimodal surface modification approach. Organic molecules with the potential of voltage stabilization were further grafted to the nanoparticle to ensure their dispersion. These extrinsic species were found to provide deep traps for charge carriers and exhibited effective charge trapping properties at a rather small concentration (∼10{sup 17} cm{sup −3}). The charge trapping is found to havemore » the most significant effect on breakdown strength when the electrical stressing time is long enough that most charges are trapped in the deep states. To establish a quantitative correlation between the trap depth and the molecular properties, the electron affinity and ionization energy of each species were calculated by an ab initio method and were compared with the experimentally measured values. The correlation however remains elusive and is possibly complicated by the field effect and the electronic interactions between different species that are not considered in this computation. At high field, a super-linear increase of current density was observed for TiO{sub 2} filled composites and is likely caused by impact excitation due to the low excitation energy of TiO{sub 2} compared to ZrO{sub 2}. It is reasoned that the hot charge carriers with energies greater than the excitation energy of TiO{sub 2} may excite an electron-hole pair upon collision with the NP, which later will be dissociated and contribute to free charge carriers. This mechanism can enhance the energy dissipation and may account for the retarded electrical degradation and breakdown of TiO{sub 2} composites.« less

The effects of shallow traps on the positive streamer electrodynamics in transformer oil based nanofluids

NASA Astrophysics Data System (ADS)

Zhou, You; Sui, Sanyi; Li, Jie; Ouyang, Zigui; Lv, Yuzhen; Li, Chengrong; Lu, Wu

2018-03-01

Nanotechnology provides a new way to improve the insulating properties of traditional dielectric materials. In this study, three types of mineral oil based nanofluids were prepared by suspending Fe3O4, TiO2 and Al2O3 nanoparticles all of which were surface modified by oleic acid. The inception voltage, stopping length and propagating velocity of streamers in the nanofluids under positive lightning impulse voltage were experimentally studied. It is found that nanoparticles can restrain the initiation and propagation processes of positive streamers in transformer oil depending on the types of nanoparticles. In addition, the trap characteristics in pure oil and nanofluids were comparably studied. The relationship between the trap characteristics and mobility of charge carriers in oil samples were then established. The increased trap density in nanofluids diffuses kinetic energy of ionized electrons and converts them into negative ions, resulting in the reduced electrical field strength in front of positive streamer and increased breakdown strength of nanofluids.

Characterization of bulk traps and interface states in AlGaN/GaN heterostructure under proton irradiation

NASA Astrophysics Data System (ADS)

Zheng, Xue-Feng; Dong, Shuai-Shuai; Ji, Peng; Wang, Chong; He, Yun-Long; Lv, Ling; Ma, Xiao-Hua; Hao, Yue

2018-06-01

This paper provides a systematic study on the bulk traps and interface states in a typical AlGaN/GaN Schottky structure under proton irradiation. After 3 MeV proton irradiation with a dose of 5 × 1014 H+/cm2, a positive flat band voltage shift of 0.3 V is observed according to the capacitance-voltage (C-V) measurements. Based on this, the distribution of electrons across AlGaN and GaN layers is extracted. Associated with the numerical calculation, direct experimental evidences demonstrate that the bulk traps within the AlGaN layer dominate the carrier removal effect under proton irradiation. Furthermore, the effects of proton irradiation on AlGaN/GaN interface states were investigated by utilizing the frequency dependent conductance technique. The time constants are extracted, which increase from 1.10-2.53 μs to 3.46-37 μs after irradiation. Meanwhile, it shows that the density of interface states increases from 9.45 × 1011-1.70 × 1013 cm-2.eV-1 to 1.8 × 1012-1.8 × 1013 cm-2.eV-1 with an increase in trap activation energy from 0.34 eV-0.32 eV to 0.41 eV-0.35 eV after irradiation. The Coulomb scattering effect of electron trapping at interface states with deeper energy levels is utilized to explain the mobility degradation in this paper.

Heating rates in collisionally opaque alkali-metal atom traps: Role of secondary collisions

NASA Astrophysics Data System (ADS)

Beijerinck, H. C. W.

2000-12-01

Grazing collisions with background gas are the major cause of trap loss and trap heating in atom traps. To first order, these effects do not depend on the trap density. In collisionally opaque trapped atom clouds, however, scattered atoms with an energy E larger than the effective trap depth Eeff, which are destined to escape from the atom cloud, will have a finite probability for a secondary collision. This results in a contribution to the heating rate that depends on the column density of the trapped atoms, i.e., the product of density and characteristic size of the trap. For alkali-metal atom traps, secondary collisions are quite important due to the strong long-range interaction with like atoms. We derive a simple analytical expression for the secondary heating rate, showing a dependency proportional to E1/2eff. When extrapolating to a vanishing column density, only primary collisions with the background gas will contribute to the heating rate. This contribution is rather small, due to the weak long-range interaction of the usual background gas species in an ultrahigh-vacuum system-He, Ne, or Ar-with the trapped alkali-metal atoms. We conclude that the transition between trap-loss collisions and heating collisions is determined by a cutoff energy 200 μK<=Eeff<=400 μK, much smaller than the actual trap depth E in most magnetic traps. Atoms with an energy Eeff

Electron trapping in rad-hard RCA IC's irradiated with electrons and gamma rays

NASA Technical Reports Server (NTRS)

Danchenko, V.; Brashears, S. S.; Fang, P. H.

1984-01-01

Enhanced electron trapping has been observed in n-channels of rad-hard CMOS devices due to electron and gamma-ray irradiation. Room-temperature annealing results in a positive shift in the threshold potential far beyond its initial value. The slope of the annealing curve immediately after irradiation was found to depend strongly on the gate bias applied during irradiation. Some dependence was also observed on the electron dose rate. No clear dependence on energy and shielding over a delidded device was observed. The threshold shift is probably due to electron trapping at the radiation-induced interface states and tunneling of electrons through the oxide-silicon energy barrier to fill the radiation-induced electron traps. A mathematical analysis, based on two parallel annealing kinetics, hole annealing and electron trapping, is applied to the data for various electron dose rates.

PbSe Nanocrystal Solids for n- and p-Channel Thin Film Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Talapin, Dmitri V.; Murray, Christopher B.

2005-10-01

Initially poorly conducting PbSe nanocrystal solids (quantum dot arrays or superlattices) can be chemically ``activated'' to fabricate n- and p-channel field effect transistors with electron and hole mobilities of 0.9 and 0.2 square centimeters per volt-second, respectively; with current modulations of about 103 to 104; and with current density approaching 3 × 104 amperes per square centimeter. Chemical treatments engineer the interparticle spacing, electronic coupling, and doping while passivating electronic traps. These nanocrystal field-effect transistors allow reversible switching between n- and p-transport, providing options for complementary metal oxide semiconductor circuits and enabling a range of low-cost, large-area electronic, optoelectronic, thermoelectric, and sensing applications.

Dependence of interface charge trapping on channel engineering in pentacene field effect transistors.

PubMed

Lee, Sunwoo; Park, Junghyuck; Park, In-Sung; Ahn, Jinho

2014-07-01

We investigate the dependence of charge carrier mobility by trap states at various interface regions through channel engineering. Prior to evaluation of interface trap density, the electrical performance in pentaene field effect transistors (FET) with high-k gate oxide are also investigated depending on four channel engineering. As a channel engineering, gas treatment, coatings of thin polymer layer, and chemical surface modification using small molecules were carried out. After channel engineering, the performance of device as well as interface trap density calculated by conductance method are remarkably improved. It is found that the reduced interface trap density is closely related to decreasing the sub-threshold swing and improving the mobility. Particularly, we also found that performance of device such as mobility, subthreshold swing, and interface trap density after gas same is comparable to those of OTS.

Jupiter plasma wave observations: an initial voyager 1 overview.

PubMed

Scarf, F L; Gurnett, D A; Kurth, W S

1979-06-01

The Voyager I plasma wave instrument detected low-frequency radio emissions, ion acoustic waves, and electron plasma oscillations for a period of months before encountering Jupiter's bow shock. In the outer magnetosphere, measurements of trapped radio waves were used to derive an electron density profile. Near and within the Io plasma torus the instrument detected high-frequency electrostatic waves, strong whistler mode turbulence, and discrete whistlers, apparently associated with lightning. Some strong emissions in the tail region and some impulsive signals have not yet been positively identified.

Atomic layer deposition of high-density Pt nanodots on Al2O3 film using (MeCp)Pt(Me)3 and O2 precursors for nonvolatile memory applications

PubMed Central

2013-01-01

Pt nanodots have been grown on Al2O3 film via atomic layer deposition (ALD) using (MeCp)Pt(Me)3 and O2 precursors. Influence of the substrate temperature, pulse time of (MeCp)Pt(Me)3, and deposition cycles on ALD Pt has been studied comprehensively by scanning electron microscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy. Therefore, Pt nanodots with a high density of approximately 2 × 1012 cm-2 have been achieved under optimized conditions: 300°C substrate temperature, 1 s pulse time of (MeCp)Pt(Me)3, and 70 deposition cycles. Further, metal-oxide-semiconductor capacitors with Pt nanodots embedded in ALD Al2O3 dielectric have been fabricated and characterized electrically, indicating noticeable electron trapping capacity, efficient programmable and erasable characteristics, and good charge retention. PMID:23413837

Trap-induced charge transfer/transport at energy harvesting assembly

NASA Astrophysics Data System (ADS)

Cho, Seongeun; Paik, Hanjong; Kim, Tae Wan; Park, Byoungnam

2017-02-01

Understanding interfacial electronic properties between electron donors and acceptors in hybrid optoelectronic solar cells is crucial in governing the device parameters associated with energy harvesting. To probe the electronic localized states at an electron donor/acceptor interface comprising a representative hybrid solar cell, we investigated the electrical contact properties between Al-doped zinc oxide (AZO) and poly (3-hexylthiophene) (P3HT) using AZO as the source and drain electrodes, pumping carriers from AZO into P3HT. The injection efficiency was evaluated using the transmission line method (TLM) in combination with field effect transistor characterizations. Highly conductive AZO films worked as the source and drain electrodes in the devices for TLM and field effect measurements. A comparable contact resistance difference between AZO/P3HT/AZO and Au/P3HT/Au structures contradicts the fact that a far larger energy barrier exists for electrons and holes between AZO and P3HT compared with between P3HT and Au based on the Schottky-Mott model. It is suggested that band to band tunneling accounts for the contradiction through the initial hop from AZO to P3HT for hole injection. The involvement of the tunneling mechanism in determining the contact resistance implies that there is a high density of electronic traps in the organic side.

Electron tunneling spectroscopy study of electrically active traps in AlGaN/GaN high electron mobility transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Jie, E-mail: jie.yang@yale.edu; Cui, Sharon; Ma, T. P.

2013-11-25

We investigate the energy levels of electron traps in AlGaN/GaN high electron mobility transistors by the use of electron tunneling spectroscopy. Detailed analysis of a typical spectrum, obtained in a wide gate bias range and with both bias polarities, suggests the existence of electron traps both in the bulk of AlGaN and at the AlGaN/GaN interface. The energy levels of the electron traps have been determined to lie within a 0.5 eV band below the conduction band minimum of AlGaN, and there is strong evidence suggesting that these traps contribute to Frenkel-Poole conduction through the AlGaN barrier.

Formation of Deep Electron Trap by Yb3+ Codoping Leads into Super-Long Persistent Luminescence in Ce3+-doped Yttrium Aluminum Gallium Garnet Phosphors.

PubMed

Ueda, Jumpei; Miyano, Shun; Tanabe, Setsuhisa

2018-05-23

The Y 3 Al 2 Ga 3 O 12 :Ce 3+ -Cr 3+ compound is one of the brightest persistent phosphors, but its persistent luminescence (PersL) duration is not so long due to the relatively shallow Cr 3+ electron trap. Comparing the vacuum referred binding energy of the electron trapping state by Cr 3+ and those by lanthanide ions, we selected Yb 3+ as a deeper electron trapping center. The Y 3 Al 2 Ga 3 O 12 :Ce 3+ -Yb 3+ phosphors show Ce 3+ :5d→4f green persistent luminescence after ceasing blue light excitation. The formation of Yb 2+ was confirmed by the increased intensity of absorption at 585 nm during the charging process. This result indicates that the Yb 3+ ions act as electron traps by capturing an electron. From the thermoluminescence glow curves, it was found the Yb 3+ trap makes much deeper electron trap with 1.01 eV depth than the Cr 3+ electron trap with 0.81 eV depth. This deeper Yb 3+ trap provides much slower detrapping rate of filled electron traps than the Cr 3+ -codoped persistent phosphor. In addition, by preparing transparent ceramics and optimizing Ce 3+ and Yb 3+ concentrations, the Y 3 Al 2 Ga 3 O 12 :Ce 3+ (0.2%)-Yb 3+ (0.1%) as-made transparent ceramic phosphor showed super long persistent luminescence for over 138.8 hours after ceasing blue light charging.

Magnetospheric Multiscale Observations of Electron Vortex Magnetic Hole in the Turbulent Magnetosheath Plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, S. Y.; Yuan, Z. G.; Wang, D. D.

We report on the observations of an electron vortex magnetic hole corresponding to a new type of coherent structure in the turbulent magnetosheath plasma using the Magnetospheric Multiscale mission data. The magnetic hole is characterized by a magnetic depression, a density peak, a total electron temperature increase (with a parallel temperature decrease but a perpendicular temperature increase), and strong currents carried by the electrons. The current has a dip in the core region and a peak in the outer region of the magnetic hole. The estimated size of the magnetic hole is about 0.23 ρ {sub i} (∼30 ρ {submore » e}) in the quasi-circular cross-section perpendicular to its axis, where ρ {sub i} and ρ {sub e} are respectively the proton and electron gyroradius. There are no clear enhancements seen in high-energy electron fluxes. However, there is an enhancement in the perpendicular electron fluxes at 90° pitch angle inside the magnetic hole, implying that the electrons are trapped within it. The variations of the electron velocity components V {sub em} and V {sub en} suggest that an electron vortex is formed by trapping electrons inside the magnetic hole in the cross-section in the M – N plane. These observations demonstrate the existence of a new type of coherent structures behaving as an electron vortex magnetic hole in turbulent space plasmas as predicted by recent kinetic simulations.« less

STUDY OF THE UPPER ATMOSPHERE BY MEANS OF THE COSMOS 3 AND COSMOS 5 SATELLITES. 2. SOFT PARTICLES

DOE Office of Scientific and Technical Information (OSTI.GOV)

Krasovskii, V.I.; Gal'perin, Yu.I.; Dzhordzhio, N.V.

1963-01-01

Geoactive particle research was conducted during the Cosmos 3 and Cosmos 5 orbital flights. The existence of currents of electrons and positive ions in the upper ionosphere having energies that are relatively low but greater than thermal is postulated. This was concluded from fluxes detected by the two types of particle counters used. a sensor formed of a fluorescent screen and photomultiplier, which was biased negatively and also shielded with Al foil so as to register only electrons above 40 ev and positive ions whose free path exceeded the foil thickness (e.g., protons of the order of 200 kev), andmore » an ion trap which registered electrons of 5 kev or more and positive ions. The trap counters showed repeated instances of anisotropic positive ion flow in a direction normal to the geomagnetic force lines; the fact that no simultaneous indications appeared in the indicator screen type counters suggests that these were soft'' positive ions; if protons, their energy would be less than 200 kev. This conclusion is supported by the fact that when the satellite had turned 180 deg the indicator counters in turn registered particles not sensed by the ion traps, which were evidently electrons below 5 kev. lt was concluded that there are areas which exhibit local current flow, in which positive ion energies are estimated to be several dozen ev and average density is 10/sup 8/ ion/cm/sup 2//sec/ster. These areas are in the 200- to 600-km region and tend to remain at the same earth latitudes for prolonged periods, sometimes as much as 9 hours. Additional observations were made of some highenergy particles, particularly those registered in the South Atlantic geomagnetic anomaly. It was concluded that these particles were electrons, estimated at between 50 kev and 1 Mev and at an omnidirectional density of 5 x 10/sup 7//cm/sup 2//sec. The possibility of spurious effects caused by the fields of on-board transmitting antennas, principally that of the telemetry transmitter, was rejected since no difference in electron count was noted whether the transmitters were on or off. The intensity and anisotropy of recorded electron currents agreed with earlier data from the 1958 Sputnik and from the U. S. Injun'' rocket of 1961. (AID)« less

Kinetic-scale fluctuations resolved with the Fast Plasma Investigation on NASA's Magnetospheric Multiscale mission.

NASA Astrophysics Data System (ADS)

Gershman, D. J.; Figueroa-Vinas, A.; Dorelli, J.; Goldstein, M. L.; Shuster, J. R.; Avanov, L. A.; Boardsen, S. A.; Stawarz, J. E.; Schwartz, S. J.; Schiff, C.; Lavraud, B.; Saito, Y.; Paterson, W. R.; Giles, B. L.; Pollock, C. J.; Strangeway, R. J.; Russell, C. T.; Torbert, R. B.; Moore, T. E.; Burch, J. L.

2017-12-01

Measurements from the Fast Plasma Investigation (FPI) on NASA's Magnetospheric Multiscale (MMS) mission have enabled unprecedented analyses of kinetic-scale plasma physics. FPI regularly provides estimates of current density and pressure gradients of sufficient accuracy to evaluate the relative contribution of terms in plasma equations of motion. In addition, high-resolution three-dimensional velocity distribution functions of both ions and electrons provide new insights into kinetic-scale processes. As an example, for a monochromatic kinetic Alfven wave (KAW) we find non-zero, but out-of-phase parallel current density and electric field fluctuations, providing direct confirmation of the conservative energy exchange between the wave field and particles. In addition, we use fluctuations in current density and magnetic field to calculate the perpendicular and parallel wavelengths of the KAW. Furthermore, examination of the electron velocity distribution inside the KAW reveals a population of electrons non-linearly trapped in the kinetic-scale magnetic mirror formed between successive wave peaks. These electrons not only contribute to the wave's parallel electric field but also account for over half of the density fluctuations within the wave, supplying an unexpected mechanism for maintaining quasi-neutrality in a KAW. Finally, we demonstrate that the employed wave vector determination technique is also applicable to broadband fluctuations found in Earth's turbulent magnetosheath.

Electronic passivation of n- and p-type GaAs using chemical vapor deposited GaS

NASA Technical Reports Server (NTRS)

Tabib-Azar, Massood; Kang, Soon; Macinnes, Andrew N.; Power, Michael B.; Barron, Andrew R.; Jenkins, Phillip P.; Hepp, Aloysius F.

1993-01-01

We report on the electronic passivation of n- and p-type GaAs using CVD cubic GaS. Au/GaS/GaAs-fabricated metal-insulator-semiconductor (MIS) structures exhibit classical high-frequency capacitor vs voltage (C-V) behavior with well-defined accumulation and inversion regions. Using high- and low-frequency C-V, the interface trap densities of about 10 exp 11/eV per sq cm on both n- and p-type GaAs are determined. The electronic condition of GaS/GaAs interface did not show any deterioration after a six week time period.

Numerical simulation of current-free double layers created in a helicon plasma device

NASA Astrophysics Data System (ADS)

Rao, Sathyanarayan; Singh, Nagendra

2012-09-01

Two-dimensional simulations reveal that when radially confined source plasma with magnetized electrons and unmagnetized ions expands into diverging magnetic field B, a current-free double layer (CFDL) embedded in a conical density structure forms, as experimentally measured in the Australian helicon plasma device (HPD). The magnetized electrons follow the diverging B while the unmagnetized ions tend to flow directly downstream of the source, resulting in a radial electric field (E⊥) structure, which couples the ion and electron flows. Ions are transversely (radially) accelerated by E⊥ on the high potential side of the double layer in the CFDL. The accelerated ions are trapped near the conical surface, where E⊥ reverses direction. The potential structure of the CFDL is U-shaped and the plasma density is enhanced on the conical surface. The plasma density is severely depleted downstream of the parallel potential drop (φ||o) in the CFDL; the density depletion and the potential drop are related by quasi-neutrality condition, including the divergence in the magnetic field and in the plasma flow in the conical structure. The potential and density structures, the CFDL spatial size, its electric field strengths and the electron and ion velocities and energy distributions in the CFDL are found to be in good agreements with those measured in the Australian experiment. The applicability of our results to measured axial potential profiles in magnetic nozzle experiments in HPDs is discussed.

Resonant tunneling through electronic trapping states in thin MgO magnetic junctions.

PubMed

Teixeira, J M; Ventura, J; Araujo, J P; Sousa, J B; Wisniowski, P; Cardoso, S; Freitas, P P

2011-05-13

We report an inelastic electron tunneling spectroscopy study on MgO magnetic junctions with thin barriers (0.85-1.35 nm). Inelastic electron tunneling spectroscopy reveals resonant electronic trapping within the barrier for voltages V>0.15  V. These trapping features are associated with defects in the barrier crystalline structure, as confirmed by high-resolution transmission electron microscopy. Such defects are responsible for resonant tunneling due to energy levels that are formed in the barrier. A model was applied to determine the average location and energy level of the traps, indicating that they are mostly located in the middle of the MgO barrier, in accordance with the high-resolution transmission electron microscopy data and trap-assisted tunneling conductance theory. Evidence of the influence of trapping on the voltage dependence of tunnel magnetoresistance is shown.

Generation of electromagnetic emission during the injection of dense supersonic plasma flows into arched magnetic field

NASA Astrophysics Data System (ADS)

Viktorov, Mikhail; Golubev, Sergey; Mansfeld, Dmitry; Vodopyanov, Alexander

2016-04-01

Interaction of dense supersonic plasma flows with an inhomogeneous arched magnetic field is one of the key problems in near-Earth and space plasma physics. It can influence on the energetic electron population formation in magnetosphere of the Earth, movement of plasma flows in magnetospheres of planets, energy release during magnetic reconnection, generation of electromagnetic radiation and particle precipitation during solar flares eruption. Laboratory study of this interaction is of big interest to determine the physical mechanisms of processes in space plasmas and their detailed investigation under reproducible conditions. In this work a new experimental approach is suggested to study interaction of supersonic (ion Mach number up to 2.7) dense (up to 1015 cm-3) plasma flows with inhomogeneous magnetic field (an arched magnetic trap with a field strength up to 3.3 T) which opens wide opportunities to model space plasma processes in laboratory conditions. Fully ionized plasma flows with density from 1013 cm-3 to 1015 cm-3 are created by plasma generator on the basis of pulsed vacuum arc discharge. Then plasma is injected in an arched open magnetic trap along or across magnetic field lines. The filling of the arched magnetic trap with dense plasma and further magnetic field lines break by dense plasma flow were experimentally demonstrated. The process of plasma deceleration during the injection of plasma flow across the magnetic field lines was experimentally demonstrated. Pulsed plasma microwave emission at the electron cyclotron frequency range was observed. It was shown that frequency spectrum of plasma emission is determined by position of deceleration region in the magnetic field of the magnetic arc, and is affected by plasma density. Frequency spectrum shifts to higher frequencies with increasing of arc current (plasma density) because the deceleration region of plasma flow moves into higher magnetic field. The observed emission can be related to the cyclotron mechanism of generation by non-equilibrium energetic electrons in dense plasma. The reported study was funded by RFBR, according to the research project No. 16-32-60056 mol_a_dk.

Improved Radio-Frequency Magneto-Optical Trap of SrF Molecules.

PubMed

Steinecker, Matthew H; McCarron, Daniel J; Zhu, Yuqi; DeMille, David

2016-11-18

We report the production of ultracold, trapped strontium monofluoride (SrF) molecules with number density and phase-space density significantly higher than previously achieved. These improvements are enabled by three distinct changes to our recently-demonstrated scheme for radio-frequency magneto-optical trapping of SrF: modification of the slowing laser beam geometry, addition of an optical pumping laser, and incorporation of a compression stage to the magneto-optical trap. With these improvements, we observe a trapped sample of SrF molecules at density 2.5×10 5  cm -3 and phase-space density 6×10 -14 , each a factor of 4 greater than in previous work. Under different experimental conditions, we observe trapping of up to 10 4 molecules, a factor of 5 greater than in previous work. Finally, by reducing the intensity of the applied trapping light, we observe molecular temperatures as low as 250 μK. © 2016 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electron particle transport and turbulence studies in the T-10 tokamak

NASA Astrophysics Data System (ADS)

Vershkov, V. A.; Borisov, M. A.; Subbotin, G. F.; Shelukhin, D. A.; Dnestrovskii, Yu. N.; Danilov, A. V.; Cherkasov, S. V.; Gorbunov, E. P.; Sergeev, D. S.; Grashin, S. A.; Krylov, S. V.; Kuleshin, E. O.; Myalton, T. B.; Skosyrev, Yu. V.; Chistiakov, V. V.

2013-08-01

The goals of this paper are to compare the results of electron particle transport measurements in ohmic (OH) plasmas by means of a small perturbation technique, high-level gas puff and gas switch off, investigate the phenomenon of ‘density pump out’ during electron cyclotron resonance heating (ECRH) and to correlate density behaviour with turbulence. Two approaches for plasma particle transport studies were compared: the low perturbation technique of periodic puff (δn/ne = 0.3%) and strong density variations (δn/ne < 50%), including density ramp-up by gas puff and ramp-down with gas switch off. The model with constant in time diffusion coefficients and pinch velocities could describe the core density perturbations but failed at the edge. In the case of strong puff three stages were distinguished. Degraded energy confinement and, respectively, low turbulence frequencies were observed during density ramp-up and ramp-down, while enhanced confinement and higher turbulence frequencies were typical for the intermediate stage. Density profile variation during this intermediate phase could be described in the framework of the transport model with constant in time coefficients. The application of ECRH at the density ramp-up phase provided the possibility of postponing the ‘density pump out’. The increase in the low-frequency modes in turbulence spectra was observed at the ‘density pump out’ phase during central ECRH. Although the high- and low-frequency bands of turbulence spectra behaved as trapped electron mode and ion temperature gradient, respectively, they both rotated at the same angular velocity as a rigid body together with magnetohydrodynamic mode m/n = 2/1 and [E × B] plasma rotation.

Electron Currents and Heating in the Ion Diffusion Region of Asymmetric Reconnection

NASA Technical Reports Server (NTRS)

Graham, D. B.; Khotyaintsev, Yu. V.; Norgren, C.; Vaivads, A.; Andre, M.; Lindqvist, P. A.; Marklund, G. T.; Ergun, R. E.; Paterson, W. R.; Gershman, D. J.;

A Simple Ground-Based Trap For Estimating Densities of Arboreal Leaf Insects

Treesearch

Robert A. Haack; Richard W. Blank

1991-01-01

Describes a trap design to use in collecting larval frass or head capsules for estimating densities of aboveground arthropods. The trap is light, compact, durable, and easily constructed from common inexpensive items.

Self-Trapped Excitons in Ionic-Covalent Silver Halide Crystals and Nanostructures: High-Frequency EPR, ESE, ENDOR and ODMR Studies

PubMed Central

Baranov, P. G.; Poluektov, O. G.; Schmidt, J.

2010-01-01

Silver halides have unique features in solid state physics because their properties are considered to be of borderline nature between ionic and covalent bonding. In AgCl, the self-trapped hole (STH) is centered and partly trapped in the cationic sublattice, forming an Ag2+ ion inside of a (AgCl6)4− complex as a result of the Jahn–Teller distortion. The STH in AgCl can capture an electron from the conduction band forming the self-trapped exciton (STE). Recent results of a study of STE by means of high-frequency electron paramagnetic resonance, electron spin echo, electron–nuclear double resonance (ENDOR) and optically detected magnetic resonance (ODMR) are reviewed. The properties of the STE in AgCl crystals, such as exchange coupling, the ordering of the triplet and singlet sublevels, the dynamical properties of the singlet and triplet states, and the hyperfine interaction with the Ag and Cl (Br) nuclei are discussed. Direct information about the spatial distribution of the wave function of STE unpaired electrons was obtained by ENDOR. From a comparison with the results of an ENDOR study of the shallow electron center and STH, it is concluded that the electron is mainly contained in a hydrogen-like 1s orbital with a Bohr radius of 15.1 ± 0.6 Å, but near its center the electron density reflects the charge distribution of the hole. The hole of the STE is virtually identical to an isolated STH center. For AgCl nanocrystals embedded into the KCl crystalline matrix, the anisotropy of the g-factor of STE and STH was found to be substantially reduced compared with that of bulk AgCl crystals, which can be explained by a considerable suppression of the Jahn–Teller effect in nanoparticles. A study of ODMR in AgBr nanocrystals in KBr revealed spatial confinement effects and allowed estimating the nanocrystal size from the shape of the ODMR spectra. PMID:21151483

Density estimation in a wolverine population using spatial capture-recapture models

USGS Publications Warehouse

Royle, J. Andrew; Magoun, Audrey J.; Gardner, Beth; Valkenbury, Patrick; Lowell, Richard E.; McKelvey, Kevin

2011-01-01

Classical closed-population capture-recapture models do not accommodate the spatial information inherent in encounter history data obtained from camera-trapping studies. As a result, individual heterogeneity in encounter probability is induced, and it is not possible to estimate density objectively because trap arrays do not have a well-defined sample area. We applied newly-developed, capture-recapture models that accommodate the spatial attribute inherent in capture-recapture data to a population of wolverines (Gulo gulo) in Southeast Alaska in 2008. We used camera-trapping data collected from 37 cameras in a 2,140-km2 area of forested and open habitats largely enclosed by ocean and glacial icefields. We detected 21 unique individuals 115 times. Wolverines exhibited a strong positive trap response, with an increased tendency to revisit previously visited traps. Under the trap-response model, we estimated wolverine density at 9.7 individuals/1,000-km2(95% Bayesian CI: 5.9-15.0). Our model provides a formal statistical framework for estimating density from wolverine camera-trapping studies that accounts for a behavioral response due to baited traps. Further, our model-based estimator does not have strict requirements about the spatial configuration of traps or length of trapping sessions, providing considerable operational flexibility in the development of field studies.

Deep level transient spectroscopy (DLTS) on colloidal-synthesized nanocrystal solids.

PubMed

Bozyigit, Deniz; Jakob, Michael; Yarema, Olesya; Wood, Vanessa

2013-04-24

We demonstrate current-based, deep level transient spectroscopy (DLTS) on semiconductor nanocrystal solids to obtain quantitative information on deep-lying trap states, which play an important role in the electronic transport properties of these novel solids and impact optoelectronic device performance. Here, we apply this purely electrical measurement to an ethanedithiol-treated, PbS nanocrystal solid and find a deep trap with an activation energy of 0.40 eV and a density of NT = 1.7 × 10(17) cm(-3). We use these findings to draw and interpret band structure models to gain insight into charge transport in PbS nanocrystal solids and the operation of PbS nanocrystal-based solar cells.

Large bipolarons and oxide superconductivity

NASA Astrophysics Data System (ADS)

Emin, David

2017-02-01

Large-bipolaron superconductivity is plausible with carrier densities well below those of conventional metals. Bipolarons form when carriers self-trap in pairs. Coherently moving large-bipolarons require extremely large ratios of static to optical dielectric-constants. The mutual Coulomb repulsion of a planar large-bipolaron's paired carriers drives it to a four-lobed shape. A phonon-mediated attraction among large-bipolarons propels their condensation into a liquid. This liquid's excitations move slowly with a huge effective mass. Excitations' concomitant weak scattering by phonons produces a moderate low-temperature dc resistivity that increases linearly with rising temperature. With falling temperature an energy gap opens between large-bipolarons' excitations and those of their self-trapped electronic carriers.

Poole-Frenkel-effect as dominating current mechanism in thin oxide films—An illusion?!

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schroeder, Herbert

2015-06-07

In many of the publications, over 50 per year for the last five years, the Poole-Frenkel-effect (PFE) is identified or suggested as dominating current mechanism to explain measured current–electric field dependencies in metal-insulator-metal (MIM) thin film stacks. Very often, the insulating thin film is a metal oxide as this class of materials has many important applications, especially in information technology. In the overwhelming majority of the papers, the identification of the PFE as dominating current mechanism is made by the slope of the current–electric field curve in the so-called Poole-Frenkel plot, i.e., logarithm of current density, j, divided by themore » applied electric field, F, versus the square root of that field. This plot is suggested by the simplest current equation for the PFE, which comprises this proportionality (ln(j/F) vs. F{sup 1/2}) leading to a straight line in this plot. Only one other parameter (except natural constants) may influence this slope: the optical dielectric constant of the insulating film. In order to identify the importance of the PFE simulation studies of the current through MIM stacks with thin insulating films were performed and the current–electric field curves without and with implementation of the PFE were compared. For the simulation, an advanced current model has been used combining electronic carrier injection/ejection currents at the interfaces, described by thermionic emission, with the carrier transport in the dielectric, described by drift and diffusion of electrons and holes in a wide band gap semiconductor. Besides the applied electric field (or voltage), many other important parameters have been varied: the density of the traps (with donor- and acceptor-like behavior); the zero-field energy level of the traps within the energy gap, this energy level is changed by the PFE (also called internal Schottky effect); the thickness of the dielectric film; the permittivity of the dielectric film simulating different oxide materials; the barriers for electrons and holes at the interfaces simulating different electrode materials; the temperature. The main results and conclusions are: (1) For a single type of trap present only (donor-like or acceptor-like), none of the simulated current density curves shows the expected behavior of the PFE and in most cases within the tested parameter field the effect of PFE is negligibly small. (2) For both types of traps present (compensation) only in the case of exact compensation, the expected slope in the PF-plot was nearly found for a wider range of the applied electric field, but for a very small range of the tested parameter field because of the very restricting additional conditions: first, the quasi-fermi level of the current controlling particle (electrons or holes) has to be 0.1 to 0.5 eV closer to the respective band limit than the zero-field energy level of the respective traps and, second, the compensating trap energy level has to be shallow. The conclusion from all these results is: the observation of the PFE as dominating current mechanism in MIM stacks with thin dielectric (oxide) films (typically 30 nm) is rather improbable!.« less

Design and Preliminary Testing of a High Performance Antiproton Trap (HiPAT)

NASA Technical Reports Server (NTRS)

Martin, James; Meyer, Kirby; Kramer, Kevin; Smith, Gerald; Lewis, Raymond; Rodgers, Stephen L. (Technical Monitor)

2000-01-01

Antimatter represents the pinnacle of energy density, offering the potential to enhance current fusion/fission concepts enabling various classes of deep space missions. Current production rates are sufficient to support proof-of-concept evaluation of many key technologies associated with antimatter-derived propulsion. Storage has been identified as a key enabling technology for all antimatter-related operations, and as such is the current focus of this NASA-MSFC effort to design and fabricate a portable device capable of holding up to 10(exp 12) particles. Hardware has been assembled and initial tests are underway to evaluate the trap behavior using electron gun generated, positive hydrogen ions. Ions have been stored for tens of minutes, limited by observed interaction with background gas. Additionally, radio frequency manipulation is being tested to increase lifetime by stabilizing the stored particles, potentially reducing their interaction with background gas, easing requirements on ultimate trap vacuum and precision mechanical alignment.

Ionic liquid gating reveals trap-filled limit mobility in low temperature amorphous zinc oxide

NASA Astrophysics Data System (ADS)

Bubel, S.; Meyer, S.; Kunze, F.; Chabinyc, M. L.

2013-10-01

In low-temperature solution processed amorphous zinc oxide (a-ZnO) thin films, we show the thin film transistor (TFT) characteristics for the trap-filled limit (TFL), when the quasi Fermi energy exceeds the conduction band edge and all tail-states are filled. In order to apply gate fields that are high enough to reach the TFL, we use an ionic liquid tape gate. Performing capacitance voltage measurements to determine the accumulated charge during TFT operation, we find the TFL at biases higher than predicted by the electronic structure of crystalline ZnO. We conclude that the density of states in the conduction band of a-ZnO is higher than in its crystalline state. Furthermore, we find no indication of percolative transport in the conduction band but trap assisted transport in the tail-states of the band.

Increase in the Shockley–Read–Hall recombination rate in InGaN/GaN QWs as the main mechanism of the efficiency droop in LEDs at high injection levels

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bochkareva, N. I.; Rebane, Yu. T.; Shreter, Yu. G., E-mail: y.shreter@mail.ioffe.ru

It is shown that the efficiency droop observed as the current through a GaN-based light-emitting diode increases is due to a decrease in the Shockley–Read–Hall nonradiative lifetime. The lifetime decreases with increasing current because a steadily growing number of traps in the density-of-states tails of InGaN/GaN quantum wells become nonradiative recombination centers upon the approach of quasi-Fermi levels to the band edges. This follows from the correlation between the efficiency droop and the appearance of negative differential capacitance, observed in the study. The correlation appears due to slow trap recharging via the trap-assisted tunneling of electrons through the n-type barriermore » of the quantum well and to the inductive nature of the diode-current variation with forward bias.« less

Kohn-Sham approach to quantum electrodynamical density-functional theory: Exact time-dependent effective potentials in real space.

PubMed

Flick, Johannes; Ruggenthaler, Michael; Appel, Heiko; Rubio, Angel

2015-12-15

The density-functional approach to quantum electrodynamics extends traditional density-functional theory and opens the possibility to describe electron-photon interactions in terms of effective Kohn-Sham potentials. In this work, we numerically construct the exact electron-photon Kohn-Sham potentials for a prototype system that consists of a trapped electron coupled to a quantized electromagnetic mode in an optical high-Q cavity. Although the effective current that acts on the photons is known explicitly, the exact effective potential that describes the forces exerted by the photons on the electrons is obtained from a fixed-point inversion scheme. This procedure allows us to uncover important beyond-mean-field features of the effective potential that mark the breakdown of classical light-matter interactions. We observe peak and step structures in the effective potentials, which can be attributed solely to the quantum nature of light; i.e., they are real-space signatures of the photons. Our findings show how the ubiquitous dipole interaction with a classical electromagnetic field has to be modified in real space to take the quantum nature of the electromagnetic field fully into account.

Positional glow curve simulation for thermoluminescent detector (TLD) system design

NASA Astrophysics Data System (ADS)

Branch, C. J.; Kearfott, K. J.

1999-02-01

Multi- and thin element dosimeters, variable heating rate schemes, and glow-curve analysis have been employed to improve environmental and personnel dosimetry using thermoluminescent detectors (TLDs). Detailed analysis of the effects of errors and optimization of techniques would be highly desirable. However, an understanding of the relationship between TL light production, light attenuation, and precise heating schemes is made difficult because of experimental challenges involved in measuring positional TL light production and temperature variations as a function of time. This work reports the development of a general-purpose computer code, thermoluminescent detector simulator, TLD-SIM, to simulate the heating of any TLD type using a variety of conventional and experimental heating methods including pulsed focused or unfocused lasers with Gaussian or uniform cross sections, planchet, hot gas, hot finger, optical, infrared, or electrical heating. TLD-SIM has been used to study the impact on the TL light production of varying the input parameters which include: detector composition, heat capacity, heat conductivity, physical size, and density; trapped electron density, the frequency factor of oscillation of electrons in the traps, and trap-conduction band potential energy difference; heating scheme source terms and heat transfer boundary conditions; and TL light scatter and attenuation coefficients. Temperature profiles and glow curves as a function of position time, as well as the corresponding temporally and/or spatially integrated glow values, may be plotted while varying any of the input parameters. Examples illustrating TLD system functions, including glow curve variability, will be presented. The flexible capabilities of TLD-SIM promises to enable improved TLD system design.

Interface investigation of solution processed high- κ ZrO2/Si MOS structure by DLTS

NASA Astrophysics Data System (ADS)

Kumar, Arvind; Mondal, Sandip; Rao, Ksr Koteswara

The interfacial region is dominating due to the continuous downscaling and integration of high- k oxides in CMOS applications. The accurate characterization of high- k oxides/semiconductor interface has the significant importance towards its usage in memory and thin film devices. The interface traps at the high - k /semiconductor interface can be quantified by deep level transient spectroscopy (DLTS) with better accuracy in contrast to capacitance-voltage (CV) and conductance technique. We report the fabrication of high- k ZrO2 films on p-Si substrate by a simple and inexpensive sol-gel spin-coating technique. Further, the ZrO2/Si interface is characterized through DLTS. The flat-band voltage (VFB) and the density of slow interface states (oxide trapped charges) extracted from CV characteristics are 0.37 V and 2x10- 11 C/cm2, respectively. The activation energy, interface state density and capture cross-section quantified by DLTS are EV + 0.42 eV, 3.4x1011 eV- 1 cm- 2 and 5.8x10- 18 cm2, respectively. The high quality ZrO2 films own high dielectric constant 15 with low leakage current density might be an appropriate insulating layer in future electronic application. The low value of interface state density and capture cross-section are the indication of high quality interface and the defect present at the interface may not affect the device performance to a great extent. The DLTS study provides a broad understanding about the traps present at the interface of spin-coated ZrO2/Si.

Discoveries in plasmas while teaching simulation

NASA Astrophysics Data System (ADS)

Birdsall, Charles K.(Ned); Estacio, Edison T.; Plasma Theory; Simulation Group (PTSG)

2004-12-01

Once PC's became ubiquitous, we have been using them for teaching plasma simulation, hands-on by instructors and by students. The transfer of skills from instructor to class has been very rapid (most desirable). However, occasionally some unanticipated results are observed with plausible explanations expected from the instructor (scary). Our examples are all one-dimensional. First, we show the famous two-stream instability in a periodic model, starting either cold or warm, which does not (quite) Maxwellianize; why not? Second, we show Landau damping also in a periodic model, with what appears to be small (hence linear) excitation, but observe trapping in the wave frame; going to very small excitation the trapping diminishes and the damping rate approaches that from Landau linear theory. Lastly, we show a warm plasma bounded by two grounded metal planar walls, uniform in density at t=0, bounded, one-dimensional. For t>0 we observe spontaneous plasma frequency oscillations in the midplane, sheath formation at ion sound speed at both walls, trapping of electrons, and acceleration of the ions to the walls; however, we also observe an oscillatory axial current, and 'staircasing' of the number of electrons in time. Both can come only from some degree of asymmetry in the system. The frequency of the current is the series resonance between the sheath capacitance (almost no electrons, so vacuum) and the bulk plasma 'inductance' (as ωseries≪ ωp).

Interactions of hydrogen with amorphous hafnium oxide

NASA Astrophysics Data System (ADS)

Kaviani, Moloud; Afanas'ev, Valeri V.; Shluger, Alexander L.

2017-02-01

We used density functional theory (DFT) calculations to study the interaction of hydrogen with amorphous hafnia (a -HfO2 ) using a hybrid exchange-correlation functional. Injection of atomic hydrogen, its diffusion towards electrodes, and ionization can be seen as key processes underlying charge instability of high-permittivity amorphous hafnia layers in many applications. Hydrogen in many wide band gap crystalline oxides exhibits negative-U behavior (+1 and -1 charged states are thermodynamically more stable than the neutral state) . Our results show that in a -HfO2 hydrogen is also negative-U, with charged states being the most thermodynamically stable at all Fermi level positions. However, metastable atomic hydrogen can share an electron with intrinsic electron trapping precursor sites [Phys. Rev. B 94, 020103 (2016)., 10.1103/PhysRevB.94.020103] forming a [etr -+O -H ] center, which is lower in energy on average by about 0.2 eV. These electron trapping sites can affect both the dynamics and thermodynamics of the interaction of hydrogen with a -HfO2 and the electrical behavior of amorphous hafnia films in CMOS devices.

Simulation of Noise in a Traveling Wave Tube

NASA Astrophysics Data System (ADS)

Verboncoeur, J. P.; Christenson, P. J.; Smith, H. B.

1999-11-01

Low frequency noise, manifested as close-in sidebands, has long been a significant limit to the performance of many traveling wave tubes. In this study, we investigate oscillations in the gun region due to the presence of plasma formed by electron-impact ionization of a background gas. The gun region of a coupled-cavity traveling wave tube is modeled using the two-dimensional XOOPIC particle-in-cell Monte Carlo collision code (J. P. Verboncoeur et al. Comput. Phys. Comm.) 87, 199-211 (1995). (available via the web: http://ptsg.eecs.berkeley.edu). The beam is 20.5 kV, 2.8 A, in near-confined flow in a solenoidal magnetic field with peak axial value of 0.263 T. Beam scalloping leads to trapping of plasma generated via electron-impact ionization of a background gas. The trapped plasma periodically leaves the system rapidly, and the density begins regenerating at a slow rate, leading to characteristic sawtooth oscillations. Plasma electrons are observed to exit the system axially about 20 ns before the ions exit primarily radially.

Positron irradiation effect on positronium formation in gamma-irradiated LDPE and unplasticized PVC

NASA Astrophysics Data System (ADS)

Yang, J.; Zang, P.; Cao, X. Z.; Yu, R. S.; Wang, B. Y.

2017-06-01

Positron irradiation effects on positronium formation in low-density polyethylene (LDPE), gamma-irradiated LDPE and unplasticized PVC (UPVC) are studied. At least in one of the three different measurements, i.e., prolonged positron annihilation measurement at room temperature, low temperature in darkness and subsequent measurement under light, changes in o-Ps intensity are observed in non-irradiated LDPE and gamma-irradiated LDPE. While in UPVC, change in o-Ps intensity is hardly observable in all the above-mentioned three measurements. Reduction of o-Ps intensity by light indicates that positronium formation via the recombination of a positron and a trapped electron exists in LDPE and gamma-irradiated LDPE. The absence of light bleaching effect, together with the fact that the value of o-Ps intensity in heating and cooling process of a thermal circle is nearly the same, indicates that in UPVC, positronium can not be formed through trapped electron mechanism. This study highlights the speciality of positronium formation in UPVC, positronium is formed exclusively by the recombination of electron-positron pairs with short separations.

Cyclotron Resonance of Electrons Trapped in a Microwave Cavity

ERIC Educational Resources Information Center

Elmore, W. C.

1975-01-01

Describes an experiment in which the free-electron cyclotron resonance of electrons trapped in a microwave cavity by a Penning trap is observed. The experiment constitutes an attractive alternative to one of the Gardner-Purcell variety. (Author/GS)

A new quasi-thermal trap model for solar flare hard X-ray bursts - An electrostatic trap model

NASA Technical Reports Server (NTRS)

Spicer, D. S.; Emslie, A. G.

1988-01-01

A new quasi-thermal trap model of solar flare hard X-ray bursts is presented. The new model utilizes the trapping ability of a magnetic mirror and a magnetic field-aligned electrostatic potential produced by differences in anisotropies of the electron and ion distribution function. It is demonstrated that this potential can, together with the magnetic mirror itself, effectively confine electrons in a trap, thereby enhancing their bremsstrahlung yield per electron. This analysis makes even more untenable models involving precipitation of the bremsstrahlung-producing electrons onto a cold target.

Improving detection tools for emerald ash borer (Coleoptera: Buprestidae): comparison of multifunnel traps, prism traps, and lure types at varying population densities.

PubMed

Crook, Damon J; Francese, Joseph A; Rietz, Michael L; Lance, David R; Hull-Sanders, Helen M; Mastro, Victor C; Silk, Peter J; Ryall, Krista L

2014-08-01

The emerald ash borer, Agrilus planipennis Fairmaire (Coleoptera: Buprestidae), is a serious invasive pest of North American ash (Fraxinus spp.) that has caused devastating mortality since it was first identified in North America in 2002. In 2012, we conducted field trapping assays that tested the efficacy of purple prism and fluon-coated green multifunnel (Lindgren funnel) traps. Traps were baited with combinations of several lures that were previously shown to be attractive to A. planipennis: manuka oil--a sesquiterpene-rich oil, (3Z)-hexenol--a green leaf volatile, or (3Z)-dodecen-12-olide [= (3Z)-lactone], a sex pheromone. Eighty-nine blocks (trap lines) were tested throughout nine states along the outer edges of the currently known A. planipennis infestation in North America. Trap catch was highest on fluon-coated green multifunnel traps, and trap detections at sites with low A. planipennis population density ranged from 72 to 76% for all trap and lure types tested. (3Z)-hexenol and (3Z)-lactone baited traps functioned as well as (3Z)-hexenol and manuka oil-baited traps. Independent of the lure used, detection rates on green fluon-coated multifunnel traps were comparable with glued purple prism traps in areas with low A. planipennis population densities.

A model for chorus associated electrostatic bursts

NASA Technical Reports Server (NTRS)

Grabbe, C. L.

1984-01-01

The linear theory of the generation of electrostatic bursts of noise by electrons trapped in chorus wave packets is developed for a finite temperature electron beam and a Maxwellian elecron and ion background. The growth rates determined qualitatively in good agreement with those obtained by previous authors from a more idealized model. Two connected instability mechanisms seem to be occurring: a beam plasma (electron-ion two-stream) instability commonly associated with intensification of the chorus power levels, and a transitional or borderline resistive medium instability commonly associated with chorus hooks. The physical reasons for the two mechanisms is discussed. In the second case electron beams are difficult to identify in the particle data. An expression is obtained for the maximum growth rate in terms of the ratios of the beam and electron thermal velocities to the beam velocity, and of the beam density to plasma density. It is anticipated that this may allow the observed peak in the electrostatic noise spectrum to be used as a diagnostic for the beam characteristics. Previously announced in STAR as N84-12832

Laser-driven plasma photonic crystals for high-power lasers

NASA Astrophysics Data System (ADS)

Lehmann, G.; Spatschek, K. H.

2017-05-01

Laser-driven plasma density gratings in underdense plasma are shown to act as photonic crystals for high power lasers. The gratings are created by counterpropagating laser beams that trap electrons, followed by ballistic ion motion. This leads to strong periodic plasma density modulations with a lifetime on the order of picoseconds. The grating structure is interpreted as a plasma photonic crystal time-dependent property, e.g., the photonic band gap width. In Maxwell-Vlasov and particle-in-cell simulations it is demonstrated that the photonic crystals may act as a frequency filter and mirror for ultra-short high-power laser pulses.

New progress of high current gasdynamic ion source (invited).

PubMed

Skalyga, V; Izotov, I; Golubev, S; Sidorov, A; Razin, S; Vodopyanov, A; Tarvainen, O; Koivisto, H; Kalvas, T

2016-02-01

The experimental and theoretical research carried out at the Institute of Applied Physics resulted in development of a new type of electron cyclotron resonance ion sources (ECRISs)-the gasdynamic ECRIS. The gasdynamic ECRIS features a confinement mechanism in a magnetic trap that is different from Geller's ECRIS confinement, i.e., the quasi-gasdynamic one similar to that in fusion mirror traps. Experimental studies of gasdynamic ECRIS were performed at Simple Mirror Ion Source (SMIS) 37 facility. The plasma was created by 37.5 and 75 GHz gyrotron radiation with power up to 100 kW. High frequency microwaves allowed to create and sustain plasma with significant density (up to 8 × 10(13) cm(-3)) and to maintain the main advantages of conventional ECRIS such as high ionization degree and low ion energy. Reaching such high plasma density relies on the fact that the critical density grows with the microwave frequency squared. High microwave power provided the average electron energy on a level of 50-300 eV enough for efficient ionization even at neutral gas pressure range of 10(-4)-10(-3) mbar. Gasdynamic ECRIS has demonstrated a good performance producing high current (100-300 mA) multi-charged ion beams with moderate average charge (Z = 4-5 for argon). Gasdynamic ECRIS has appeared to be especially effective in low emittance hydrogen and deuterium beams formation. Proton beams with current up to 500 emA and RMS emittance below 0.07 π ⋅ mm ⋅ mrad have been demonstrated in recent experiments.

Hysteresis in Carbon Nanotube Transistors: Measurement and Analysis of Trap Density, Energy Level, and Spatial Distribution.

PubMed

Park, Rebecca Sejung; Shulaker, Max Marcel; Hills, Gage; Suriyasena Liyanage, Luckshitha; Lee, Seunghyun; Tang, Alvin; Mitra, Subhasish; Wong, H-S Philip

2016-04-26

We present a measurement technique, which we call the Pulsed Time-Domain Measurement, for characterizing hysteresis in carbon nanotube field-effect transistors, and demonstrate its applicability for a broad range of 1D and 2D nanomaterials beyond carbon nanotubes. The Pulsed Time-Domain Measurement enables the quantification (density, energy level, and spatial distribution) of charged traps responsible for hysteresis. A physics-based model of the charge trapping process for a carbon nanotube field-effect transistor is presented and experimentally validated using the Pulsed Time-Domain Measurement. Leveraging this model, we discover a source of traps (surface traps) unique to devices with low-dimensional channels such as carbon nanotubes and nanowires (beyond interface traps which exist in today's silicon field-effect transistors). The different charge trapping mechanisms for interface traps and surface traps are studied based on their temperature dependencies. Through these advances, we are able to quantify the interface trap density for carbon nanotube field-effect transistors (∼3 × 10(13) cm(-2) eV(-1) near midgap), and compare this against a range of previously studied dielectric/semiconductor interfaces.

Role of interface states on electron transport in a-Si:H/nc-Si:H multilayer structures

NASA Astrophysics Data System (ADS)

Yadav, Asha; Kumari, Juhi; Agarwal, Pratima

2018-05-01

In this paper we report, I-V characteristic of a-Si:H/nc-Si:H multilayer structures in lateral as well as transverse direction. In lateral geometry, where the interfaces are parallel to the direction of electronic transport, residual photo conductivity (persistent photoconductivity) is observed after the light was turned off. On the other hand, in transverse geometry, where interfaces are along the direction of electronic transport, the space charge limited currents are affected and higher density of states is obtained. The PPC was more in the structures where numbers of such interface were more. These results have been understood in terms of the charge carriers trapped at the interface, which influence the electronic transport.

Field electron emission enhancement in lithium implanted and annealed nitrogen-incorporated nanocrystalline diamond films

NASA Astrophysics Data System (ADS)

Sankaran, K. J.; Srinivasu, K.; Yeh, C. J.; Thomas, J. P.; Drijkoningen, S.; Pobedinskas, P.; Sundaravel, B.; Leou, K. C.; Leung, K. T.; Van Bael, M. K.; Schreck, M.; Lin, I. N.; Haenen, K.

2017-06-01

The field electron emission (FEE) properties of nitrogen-incorporated nanocrystalline diamond films were enhanced due to Li-ion implantation/annealing processes. Li-ion implantation mainly induced the formation of electron trap centers inside diamond grains, whereas post-annealing healed the defects and converted the a-C phase into nanographite, forming conduction channels for effective transport of electrons. This resulted in a high electrical conductivity of 11.0 S/cm and enhanced FEE performance with a low turn-on field of 10.6 V/μm, a high current density of 25.5 mA/cm2 (at 23.2 V/μm), and a high lifetime stability of 1,090 min for nitrogen incorporated nanocrystalline diamond films.

Wide Bandgap Extrinsic Photoconductive Switches

NASA Astrophysics Data System (ADS)

Sullivan, James Stephen

Wide Bandgap Extrinsic Photoconductive Switches Semi-insulating Gallium Nitride, 4H and 6H Silicon Carbide are attractive materials for compact, high voltage, extrinsic, photoconductive switches due to their wide bandgap, high dark resistance, high critical electric field strength and high electron saturation velocity. These wide bandgap semiconductors are made semi-insulating by the addition of vanadium (4H and 6H-SiC) and iron (2H-GaN) impurities that form deep acceptors. These deep acceptors trap electrons donated from shallow donor impurities. The electrons can be optically excited from these deep acceptor levels into the conduction band to transition the wide bandgap semiconductor materials from a semi-insulating to a conducting state. Extrinsic photoconductive switches with opposing electrodes have been constructed using vanadium compensated 6H-SiC and iron compensated 2H-GaN. These extrinsic photoconductive switches were tested at high voltage and high power to determine if they could be successfully used as the closing switch in compact medical accelerators. The successful development of a vanadium compensated, 6H-SiC extrinsic photoconductive switch for use as a closing switch for compact accelerator applications was realized by improvements made to the vanadium, nitrogen and boron impurity densities. The changes made to the impurity densities were based on the physical intuition outlined and simple rate equation models. The final 6H-SiC impurity 'recipe' calls for vanadium, nitrogen and boron densities of 2.5 e17 cm-3, 1.25e17 cm-3 and ≤ 1e16 cm-3, respectively. This recipe was originally developed to maximize the quantum efficiency of the vanadium compensated 6H-SiC, while maintaining a thermally stable semi-insulating material. The rate equation models indicate that, besides increasing the quantum efficiency, the impurity recipe should be expected to also increase the carrier recombination time. Three generations of 6H-SiC materials were tested. The third generation vanadium compensated 6H-SiC has average impurity densities close to the recipe values. Extrinsic photoconductive switches constructed from the third generation vanadium compensated, 6H-SiC, 1 mm thick, 1 cm2, substrates have achieved high power operation at 16 kV with pulsed currents exceeding 1400 Amperes and a minimum on resistance of 1 ohm. The extrinsic photoconductive switch performance of the third generation 6H-SiC material was improved by a factor of up to 50 for excitation at the 532 nm wavelength compared to the initial 6H-SiC material. Switches based on this material have been incorporated into a prototype compact proton medical accelerator being developed by the Compact Particle Acceleration Corporation (CPAC). The vanadium compensated, 6H-SiC, extrinsic photoconductive switch operates differently when excited by 1064, or 532 nm, wavelength light. The 6H-SiC extrinsic photoconductive switch is a unipolar device when excited with 1064 nm light. The carriers are electrons excited from filled vanadium acceptor levels and other electron traps located within 1.17 eV of the conduction band. The switch is bipolar at 532 nm since the carriers consist of holes, as well as electrons. The holes are primarily generated by the excitation of valence band electrons into empty trap/acceptor levels and by two-photon absorption. Carrier generation by two-photon absorption becomes more important at high applied optical intensity at 532 nm and contributes to the supralinear behavior of switch conductance as a function of optical power. The 6H-SiC switch material is trap dominated at low nitrogen to vanadium ratios. The trap dominated vanadium compensated 6H-SiC exhibits low quantum efficiency when excited with 1064 and 532 nm light and has a carrier recombination time of ˜ 150 - 300 ps. The vanadium compensated 6H-SiC transitions to an impurity dominated material as the ratio of nitrogen to vanadium is increased to 0.5. The increased nitrogen doping produces a material with much higher quantum efficiency and carrier recombination time of 0.9 to 1.0 ns. The iron compensated 2H-GaN did not perform well as an extrinsic photoconductive switch. The density of carriers generated at 1064 nm was, low indicating that there were very few electrons trapped in the iron acceptor level located at 0.5 - 0.6 eV below the conduction band. Carrier generation at 532 nm was dominated by two photon absorption resulting in the switch conductance increasing as the square of applied optical intensity. A minimum switch resistance of 0.8 ohms was calculated for the 400 nm thick, 1.2 by 1.2 cm, 2H-GaN switch for an applied optical intensity of 41.25 MW/cm2. An optical intensity of ˜ 70 MW/cm2 at 532 nm would be required to achieve a 0.8 ohm on resistance for a 1 mm thick, 1 cm2, 2H-GaN switch.

Trap Modulated Charge Carrier Transport in Polyethylene/Graphene Nanocomposites.

PubMed

Li, Zhonglei; Du, Boxue; Han, Chenlei; Xu, Hang

2017-06-21

The role of trap characteristics in modulating charge transport properties is attracting much attentions in electrical and electronic engineering, which has an important effect on the electrical properties of dielectrics. This paper focuses on the electrical properties of Low-density Polyethylene (LDPE)/graphene nanocomposites (NCs), as well as the corresponding trap level characteristics. The dc conductivity, breakdown strength and space charge behaviors of NCs with the filler content of 0 wt%, 0.005 wt%, 0.01 wt%, 0.1 wt% and 0.5 wt% are studied, and their trap level distributions are characterized by isothermal discharge current (IDC) tests. The experimental results show that the 0.005 wt% LDPE/graphene NCs have a lower dc conductivity, a higher breakdown strength and a much smaller amount of space charge accumulation than the neat LDPE. It is indicated that the graphene addition with a filler content of 0.005 wt% introduces large quantities of deep carrier traps that reduce charge carrier mobility and result in the homocharge accumulation near the electrodes. The deep trap modulated charge carrier transport attributes to reduce the dc conductivity, suppress the injection of space charges into polymer bulks and enhance the breakdown strength, which is of great significance in improving electrical properties of polymer dielectrics.

GaAs on Si epitaxy by aspect ratio trapping: Analysis and reduction of defects propagating along the trench direction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Orzali, Tommaso, E-mail: tommaso.orzali@sematech.org; Vert, Alexey; O'Brien, Brendan

2015-09-14

The Aspect Ratio Trapping technique has been extensively evaluated for improving the quality of III-V heteroepitaxial films grown on Si, due to the potential for terminating defects at the sidewalls of SiO{sub 2} patterned trenches that enclose the growth region. However, defects propagating along the trench direction cannot be effectively confined with this technique. We studied the effect of the trench bottom geometry on the density of defects of GaAs fins, grown by metal-organic chemical vapor deposition on 300 mm Si (001) wafers inside narrow (<90 nm wide) trenches. Plan view and cross sectional Scanning Electron Microscopy and Transmission Electron Microscopy, togethermore » with High Resolution X-Ray Diffraction, were used to evaluate the crystal quality of GaAs. The prevalent defects that reach the top surface of GaAs fins are (111) twin planes propagating along the trench direction. The lowest density of twin planes, ∼8 × 10{sup 8 }cm{sup −2}, was achieved on “V” shaped bottom trenches, where GaAs nucleation occurs only on (111) Si planes, minimizing the interfacial energy and preventing the formation of antiphase boundaries.« less

Density estimation using the trapping web design: A geometric analysis

USGS Publications Warehouse

Link, W.A.; Barker, R.J.

1994-01-01

Population densities for small mammal and arthropod populations can be estimated using capture frequencies for a web of traps. A conceptually simple geometric analysis that avoid the need to estimate a point on a density function is proposed. This analysis incorporates data from the outermost rings of traps, explaining large capture frequencies in these rings rather than truncating them from the analysis.

The neoclassical ``Electron Root'' feature in the Wendelstein-7-AS stellarator

NASA Astrophysics Data System (ADS)

Maaßberg, H.; Beidler, C. D.; Gasparino, U.; Romé, M.; Dyabilin, K. S.; Marushchenko, N. B.; Murakami, S.

2000-01-01

The neoclassical prediction of the "electron root," i.e., a strongly positive radial electric field, Er (being the solution of the ambipolarity condition of the particle fluxes), is analyzed for low-density discharges in Wendelstein-7-AS [G. Grieger, W. Lotz, P. Merkel, et al., Phys. Fluids B 4, 2081 (1992)]. In these electron cyclotron resonance heated (ECRH) discharges with highly localized central power deposition, peaked Te profiles [with Te(0) up to 6 keV and with Ti≪Te] and strongly positive Er in the central region are measured. It is shown that this "electron root" feature at W7-AS is driven by ripple-trapped suprathermal electrons generated by the ECRH. The fraction of ripple-trapped particles in the ECRH launching plane, which can be varied at W7-AS, is found to be the most important. After switching off the heating the "electron root" feature disappears nearly immediately, i.e., two different time scales for the electron temperature decay in the central region are observed. Monte Carlo simulations in five-dimensional phase space are presented, clearly indicating that the additional "convective" electron fluxes driven by the ECRH are of the same order as the ambipolar neoclassical prediction for the "ion root" at much lower Er. For the predicted "electron root," the ion fluxes calculated based on the traditional neoclassical ordering are much too small; shortcomings of the usual approach are indentified and a new ordering scheme is proposed.

Boltzmann transport properties of ultra thin-layer of h-CX monolayers

NASA Astrophysics Data System (ADS)

Kansara, Shivam; Gupta, Sanjeev K.; Sonvane, Yogesh

2018-04-01

Structural, electronic and thermoelectric properties of monolayer h-CX (X= Al, As, B, Bi, Ga, In, P, N, Sb and Tl) have been computed using density functional theory (DFT). The structural, electronic band structure, phonon dispersion curves and thermoelectric properties have been investigated. h-CGa and h-CTl show the periodically lattice vibrations and h-CB and h-CIn show small imaginary ZA frequencies. Thermoelectric properties are obtained using BoltzTrap code with the constant relaxation time (τ) approximation such as electronic, thermal and electrical conductivity calculated for various temperatures. The results indicate that h-CGa, h-CIn, h-CTl and h-CAl have direct band gaps with minimum electronic thermal and electrical conductivity while h-CB and h-CN show the high electronic thermal and electrical conductivity with highest cohesive energy.

Staging of laser-plasma accelerators

DOE PAGES

Steinke, S.; van Tilborg, J.; Benedetti, C.; ...

2016-05-02

We present results of an experiment where two laser-plasma-accelerator stages are coupled at a short distance by a plasma mirror. Stable electron beams from the first stage were used to longitudinally probe the dark-current-free, quasi-linear wakefield excited by the laser of the second stage. Changing the arrival time of the electron beam with respect to the second stage laser pulse allowed reconstruction of the temporal wakefield structure, determination of the plasma density, and inference of the length of the electron beam. The first stage electron beam could be focused by an active plasma lens to a spot size smaller thanmore » the transverse wake size at the entrance of the second stage. Furthermore, this permitted electron beam trapping, verified by a 100 MeV energy gain.« less

Accurate characterization and understanding of interface trap density trends between atomic layer deposited dielectrics and AlGaN/GaN with bonding constraint theory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ramanan, Narayanan; Lee, Bongmook; Misra, Veena, E-mail: vmisra@ncsu.edu

2015-06-15

Many dielectrics have been proposed for the gate stack or passivation of AlGaN/GaN based metal oxide semiconductor heterojunction field effect transistors, to reduce gate leakage and current collapse, both for power and RF applications. Atomic Layer Deposition (ALD) is preferred for dielectric deposition as it provides uniform, conformal, and high quality films with precise monolayer control of film thickness. Identification of the optimum ALD dielectric for the gate stack or passivation requires a critical investigation of traps created at the dielectric/AlGaN interface. In this work, a pulsed-IV traps characterization method has been used for accurate characterization of interface traps withmore » a variety of ALD dielectrics. High-k dielectrics (HfO{sub 2}, HfAlO, and Al{sub 2}O{sub 3}) are found to host a high density of interface traps with AlGaN. In contrast, ALD SiO{sub 2} shows the lowest interface trap density (<2 × 10{sup 12 }cm{sup −2}) after annealing above 600 °C in N{sub 2} for 60 s. The trend in observed trap densities is subsequently explained with bonding constraint theory, which predicts a high density of interface traps due to a higher coordination state and bond strain in high-k dielectrics.« less

Proton trapping in SiO 2 layers thermally grown on Si and SiC

NASA Astrophysics Data System (ADS)

Afanas'ev, V. V.; Ciobanu, F.; Pensl, G.; Stesmans, A.

2002-11-01

Positive charging of thermal SiO 2 layers on (1 0 0)Si and (0 0 0 1)6H-, 4H-SiC related to trapping of protons is studied using low-energy proton implantation into the oxide, and compared to the trapping of holes generated by 10-eV photons. Proton trapping has an initial probability close to 100% and shows little sensitivity to the annealing-induced oxygen deficiency of SiO 2. In contrast to protons, hole trapping in as-grown SiO 2 shows a much lower efficiency which increases upon oxide annealing, in qualitative correlation with the higher density of O 3Si• defects (E' centers) detected by electron spin resonance after hole injection. Despite these differences, the neutralization of positive charges induced by holes and protons has the same cross-section, and in both cases is accompanied by liberation of atomic H suggesting that protons account for positive charge in both cases. The rupture of Si-O bonds in the oxide observed upon proton injection suggests, as a first basic step, the bonding of a proton to a bridging oxygen atom in SiO 2 network.

Comparison of trap types and colors for capturing emerald ash borer adults at different population densities.

PubMed

Poland, Therese M; Mccullough, Deborah G

2014-02-01

Results of numerous trials to evaluate artificial trap designs and lures for detection of Agrilus planipennis Fairmaire, the emerald ash borer, have yielded inconsistent results, possibly because of different A. planipennis population densities in the field sites. In 2010 and 2011, we compared 1) green canopy traps, 2) purple canopy traps, 3) green double-decker traps, and 4) purple double-decker traps in sites representing a range of A. planipennis infestation levels. Traps were baited with cis-3-hexenol in both years, plus an 80:20 mixture of Manuka and Phoebe oil (2010) or Manuka oil alone (2011). Condition of trees bearing canopy traps, A. planipennis infestation level of trees in the vicinity of traps, and number of A. planipennis captured per trap differed among sites in both years. Overall in both years, more females, males, and beetles of both sexes were captured on double-decker traps than canopy traps, and more beetles of both sexes (2010) or females (2011) were captured on purple traps than green traps. In 2010, detection rates were higher for purple (100%) and green double-decker traps (100%) than for purple (82%) or green canopy traps (64%) at sites with very low to low A. planipennis infestation levels. Captures of A. planipennis on canopy traps consistently increased with the infestation level of the canopy trap-bearing trees. Differences among trap types were most pronounced at sites with low A. planipennis densities, where more beetles were captured on purple double-decker traps than on green canopy traps in both years.

Unraveling surface and bulk trap states in lead halide perovskite solar cells using impedance spectroscopy

NASA Astrophysics Data System (ADS)

Han, Changfeng; Wang, Kai; Zhu, Xixiang; Yu, Haomiao; Sun, Xiaojuan; Yang, Qin; Hu, Bin

2018-03-01

Organic-inorganic hybrid perovskites (OIHPs) have been widely recognized as an excellent candidate for next-generation photovoltaic materials because of their highly efficient power conversion. Acquiring a complete understanding of trap states and dielectric properties in OIHP-based solar cells at the steady state is highly desirable in order to further explore and improve their optoelectronic functionalities and properties. We report CH3NH3PbI3-x Cl x -based planar solar cells with a power conversion efficiency (PCE) of 15.8%. The illumination intensity dependence of the current density-voltage (J-V) revealed the presence of trap-assisted recombination at low fluences. Non-destructive ac impedance spectroscopy (ac-IS) was applied to characterize the device at the steady state. The capacitance-voltage (C-V) spectra exhibited some distinct variations at a wide range of ac modulation frequencies with and without photo-excitations. Since the frequency-dependent chemical capacitance ({{C}μ }) is concerned with the surface and bulk related density of states (DOS) in CH3NH3PbI3-x Cl x , we verified this by fitting the corresponding DOS by a Gaussian distribution function. We ascertained that the electronic sub-gap trap states present in the solution processed CH3NH3PbI3-x Cl x and their distribution differs from the surface to the bulk. In fact, we demonstrated that both surfaces that were adjacent to the electron and hole transport layers featured analogous DOS. Despite this, photo- and bias-induced giant dielectric responses (i.e. both real and imaginary parts) were detected. A remarkable reduction of {{C}μ } at higher frequencies (i.e. more than 100 kHz) was ascribed to the effect of dielectric loss in CH3NH3PbI3-x Cl x .

Spatiotemporal dynamics of charged species in the afterglow of plasmas containing negative ions.

PubMed

Kaganovich, I D; Ramamurthi, B N; Economou, D J

2001-09-01

The spatiotemporal evolution of charged species densities and wall fluxes during the afterglow of an electronegative discharge has been investigated. The decay of a plasma with negative ions consists of two stages. During the first stage of the afterglow, electrons dominate plasma diffusion and negative ions are trapped inside the vessel by the static electric field; the flux of negative ions to the walls is nearly zero. During this stage, the electron escape frequency increases considerably in the presence of negative ions, and can eventually approach free electron diffusion. During the second stage of the afterglow, electrons have disappeared, and positive and negative ions diffuse to the walls with the ion-ion ambipolar diffusion coefficient. Theories for plasma decay have been developed for equal and strongly different ion (T(i)) and electron (T(e)) temperatures. In the case T(i)=T(e), the species spatial profiles are similar and an analytic solution exists. When detachment is important in the afterglow (weakly electronegative gases, e.g., oxygen) the plasma decay crucially depends on the product of negative ion detachment frequency (gamma(d)) and diffusion time (tau(d)). If gamma(d)tau(d)>2, negative ions convert to electrons during their diffusion towards the walls. The presence of detached electrons results in "self-trapping" of the negative ions, due to emerging electric fields, and the negative ion flux to the walls is extremely small. In the case T(i)

Determination of bulk and interface density of states in metal oxide semiconductor thin-film transistors by using capacitance-voltage characteristics

NASA Astrophysics Data System (ADS)

Wei, Xixiong; Deng, Wanling; Fang, Jielin; Ma, Xiaoyu; Huang, Junkai

2017-10-01

A physical-based straightforward extraction technique for interface and bulk density of states in metal oxide semiconductor thin film transistors (TFTs) is proposed by using the capacitance-voltage (C-V) characteristics. The interface trap density distribution with energy has been extracted from the analysis of capacitance-voltage characteristics. Using the obtained interface state distribution, the bulk trap density has been determined. With this method, for the interface trap density, it is found that deep state density nearing the mid-gap is approximately constant and tail states density increases exponentially with energy; for the bulk trap density, it is a superposition of exponential deep states and exponential tail states. The validity of the extraction is verified by comparisons with the measured current-voltage (I-V) characteristics and the simulation results by the technology computer-aided design (TCAD) model. This extraction method uses non-numerical iteration which is simple, fast and accurate. Therefore, it is very useful for TFT device characterization.

Optoelectronically probing the density of nanowire surface trap states to the single state limit

NASA Astrophysics Data System (ADS)

Dan, Yaping

2015-02-01

Surface trap states play a dominant role in the optoelectronic properties of nanoscale devices. Understanding the surface trap states allows us to properly engineer the device surfaces for better performance. But characterization of surface trap states at nanoscale has been a formidable challenge using the traditional capacitive techniques. Here, we demonstrate a simple but powerful optoelectronic method to probe the density of nanowire surface trap states to the single state limit. In this method, we choose to tune the quasi-Fermi level across the bandgap of a silicon nanowire photoconductor, allowing for capture and emission of photogenerated charge carriers by surface trap states. The experimental data show that the energy density of nanowire surface trap states is in a range from 109 cm-2/eV at deep levels to 1012 cm-2/eV near the conduction band edge. This optoelectronic method allows us to conveniently probe trap states of ultra-scaled nano/quantum devices at extremely high precision.

A hierarchical model for estimating density in camera-trap studies

USGS Publications Warehouse

Royle, J. Andrew; Nichols, James D.; Karanth, K.Ullas; Gopalaswamy, Arjun M.

2009-01-01

Estimating animal density using capture–recapture data from arrays of detection devices such as camera traps has been problematic due to the movement of individuals and heterogeneity in capture probability among them induced by differential exposure to trapping.We develop a spatial capture–recapture model for estimating density from camera-trapping data which contains explicit models for the spatial point process governing the distribution of individuals and their exposure to and detection by traps.We adopt a Bayesian approach to analysis of the hierarchical model using the technique of data augmentation.The model is applied to photographic capture–recapture data on tigers Panthera tigris in Nagarahole reserve, India. Using this model, we estimate the density of tigers to be 14·3 animals per 100 km2 during 2004.Synthesis and applications. Our modelling framework largely overcomes several weaknesses in conventional approaches to the estimation of animal density from trap arrays. It effectively deals with key problems such as individual heterogeneity in capture probabilities, movement of traps, presence of potential ‘holes’ in the array and ad hoc estimation of sample area. The formulation, thus, greatly enhances flexibility in the conduct of field surveys as well as in the analysis of data, from studies that may involve physical, photographic or DNA-based ‘captures’ of individual animals.

Electron-trapping polycrystalline materials with negative electron affinity.

PubMed

McKenna, Keith P; Shluger, Alexander L

2008-11-01

The trapping of electrons by grain boundaries in semiconducting and insulating materials is important for a wide range of physical problems, for example, relating to: electroceramic materials with applications as sensors, varistors and fuel cells, reliability issues for solar cell and semiconductor technologies and electromagnetic seismic phenomena in the Earth's crust. Surprisingly, considering their relevance for applications and abundance in the environment, there have been few experimental or theoretical studies of the electron trapping properties of grain boundaries in highly ionic materials such as the alkaline earth metal oxides and alkali halides. Here we demonstrate, by first-principles calculations on MgO, LiF and NaCl, a qualitatively new type of electron trapping at grain boundaries. This trapping is associated with the negative electron affinity of these materials and is unusual as the electron is confined in the empty space inside the dislocation cores.

Collisionless microtearing modes in hot tokamaks: Effect of trapped electrons

DOE Office of Scientific and Technical Information (OSTI.GOV)

Swamy, Aditya K.; Ganesh, R., E-mail: ganesh@ipr.res.in; Brunner, S.

2015-07-15

Collisionless microtearing modes have recently been found linearly unstable in sharp temperature gradient regions of large aspect ratio tokamaks. The magnetic drift resonance of passing electrons has been found to be sufficient to destabilise these modes above a threshold plasma β. A global gyrokinetic study, including both passing electrons as well as trapped electrons, shows that the non-adiabatic contribution of the trapped electrons provides a resonant destabilization, especially at large toroidal mode numbers, for a given aspect ratio. The global 2D mode structures show important changes to the destabilising electrostatic potential. The β threshold for the onset of the instabilitymore » is found to be generally downshifted by the inclusion of trapped electrons. A scan in the aspect ratio of the tokamak configuration, from medium to large but finite values, clearly indicates a significant destabilizing contribution from trapped electrons at small aspect ratio, with a diminishing role at larger aspect ratios.« less

Research on c-HfO2 (0 0 1)/α -Al2O3 (1 -1 0 2) interface in CTM devices based on first principle theory

NASA Astrophysics Data System (ADS)

Lu, Wenjuan; Dai, Yuehua; Wang, Feifei; Yang, Fei; Ma, Chengzhi; Zhang, Xu; Jiang, Xianwei

2017-12-01

With the growing application of high-k dielectrics, the interface between HfO2 and Al2O3 play a crucial role in CTM devices. To clearly understand the interaction of the HfO-AlO interface at the atomic and electronic scale, the bonding feature, electronic properties and charge localized character of c- HfO2 (0 0 1)/α-Al2O3 (1 -1 0 2) interface has been investigated by first principle calculations. The c- HfO2 (0 0 1)/α-Al2O3 (1 -1 0 2) interface has adhesive energy about -1.754 J/m2, suggesting that this interface can exist stably. Through analysis of Bader charge and charge density difference, the intrinsic interfacial gap states are mainly originated from the OII and OIII types oxygen atoms at the interface, and only OIII type oxygen atoms can localized electrons effectively and are provided with good reliability during P/E cycles, which theoretically validate the experimental results that HfO2/Al2O3 multi-layered charge trapping layer can generate more effective traps in memory device. Furthermore, the influence of interfacial gap states during P/E cycles in the defective interface system have also been studied, and the results imply that defective system displays the degradation on the reliability during P/E cycles, while, the charge localized ability of interfacial states is stronger than intrinsic oxygen vacancy in the trapping layer. Besides, these charge localized characters are further explained by the analysis of the density of states correspondingly. In sum, our results compare well with similar experimental observations in other literatures, and the study of the interfacial gap states in this work would facilitate further development of interface passivation.

Solvation of excess electrons trapped in charge pockets on molecular surfaces

NASA Astrophysics Data System (ADS)

Jalbout, Abraham F.

This work considers the ability of hydrogen fluoride (HF) to solvate excess electrons located on cyclic hydrocarbon surfaces. The principle applied involves the formation of systems in which excess electrons can be stabilized not only on concentrated molecular surface charge pockets but also by HF. Recent studies have shown that OH groups can form stable hydrogen-bonded networks on one side of a hydrocarbon surface (i.e. cyclohexane sheets), at the same time, the hydrogen atoms on the opposite side of this surface form a pocket of positive charge can attract the excess electron. This density can be further stabilized by the addition of an HF molecule that can form an 'anion with an internally solvated electron' (AISE) state. These systems are shown to be stable with respect to vertical electron detachment (VDE).

Observation of the effects of stronger magnetic fields on warm, higher energy electrons and ion beams transiting a double layer in a helicon plasma

NASA Astrophysics Data System (ADS)

Scharer, John; Sung, Yung-Ta; Li, Yan

2017-10-01

Fast, two-temperature electrons (>80 eV, Te =13 eV tail, 4 eV bulk) with substantial tail density fractions are created at low (< = 1.7 mtorr) Ar pressure @ 340 G in the antenna region with nozzle mirror ratio of 1.4 on MadHeX @ 900W. These distributions including a fast tail are observed upstream of a double layer. The fast, untrapped tail electrons measured downstream of the double layer have a higher temperature of 13 eV than the trapped, upstream electrons of 4 eV temperature. Upstream plasma potential fluctuations of + - 30 percent are observed. An RF-compensated Langmuir probe is used to measure the electron temperatures and densities and OES, mm wave IF and an RPA for the IEDF are also utilized. As the magnetic field is increased to 1020 G, an increase in the electron temperature and density upstream of the double layer is observed with Te= 15-25 eV with a primarily single temperature mode. Accelerated ion beam energies in the range of 65-120 eV are observed as the magnetic field is increased from 340 to 850 G. The role of the nozzle, plasma double layer and helicon wave coupling on the EEDF and ion acceleration will be discussed. Research supported in part by the University of Wisconsin.

Space Environment Effects on Flexible, Low-Voltage Organic Thin-Film Transistors.

PubMed

Basiricò, Laura; Basile, Alberto Francesco; Cosseddu, Piero; Gerardin, Simone; Cramer, Tobias; Bagatin, Marta; Ciavatti, Andrea; Paccagnella, Alessandro; Bonfiglio, Annalisa; Fraboni, Beatrice

2017-10-11

Organic electronic devices fabricated on flexible substrates are promising candidates for applications in environments where flexible, lightweight, and radiation hard materials are required. In this work, device parameters such as threshold voltage, charge mobility, and trap density of 13-bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene)-based organic thin-film transistors (OTFTs) have been monitored for performing electrical measurements before and after irradiation by high-energy protons. The observed reduction of charge carrier mobility following irradiation can be only partially ascribed to the increased trap density. Indeed, we used other techniques to identify additional effects induced by proton irradiation in such devices. Atomic force microscopy reveals morphological defects occurring in the organic dielectric layer induced by the impinging protons, which, in turn, induce a strain on the TIPS-pentacene crystallites lying above. The effects of this strain are investigated by density functional theory simulations of two model structures, which describe the TIPS-pentacene crystalline films at equilibrium and under strain. The two different density of states distributions in the valence band have been correlated with the photocurrent spectra acquired before and after proton irradiation. We conclude that the degradation of the dielectric layer and the organic semiconductor sensitivity to strain are the two main phenomena responsible for the reduction of OTFT mobility after proton irradiation.

Effect of Trapped Ions on Shielding and Floating Potential of a Dust Grain in a Plasma

NASA Astrophysics Data System (ADS)

Lampe, Martin; Ganguli, Gurudas; Joyce, Glenn; Gavrishchaka, Valeriy

2001-10-01

The problem of electrostatic shielding around a small spherical collector immersed in plasma, and the related problem of electron and ion flow to the collector, date to the origins of plasma physics. Beginning with Mott-Smith and Langmuir (1926), calculations have typically neglected collisions, on the grounds that the mean free path is long compared to shielding length scales, i.e. the Debye length. However, investigators beginning with Bernstein and Rabinowitz (1959) have known that negative-energy trapped ions, created by occasional collisions, might be important. We present an analytic calculation of the density of trapped and untrapped ions, self-consistent with the potential. Under typical conditions for dust grains immersed in a discharge plasma, trapped ions dominate the shielding cloud in steady state, even in the limit of very long mean free path. As a result the shielded potential is different from the results of orbital motion limited theory. Collisions also greatly increase the ion current to the collector, thereby decreasing the floating potential and the grain charge by a factor as large as two to three.

Operation mode switchable charge-trap memory based on few-layer MoS2

NASA Astrophysics Data System (ADS)

Hou, Xiang; Yan, Xiao; Liu, Chunsen; Ding, Shijin; Zhang, David Wei; Zhou, Peng

2018-03-01

Ultrathin layered two-dimensional (2D) semiconductors like MoS2 and WSe2 have received a lot of attention because of their excellent electrical properties and potential applications in electronic devices. We demonstrate a charge-trap memory with two different tunable operation modes based on a few-layer MoS2 channel and an Al2O3/HfO2/Al2O3 charge storage stack. Our device shows excellent memory properties under the traditional three-terminal operation mode. More importantly, unlike conventional charge-trap devices, this device can also realize the memory performance with just two terminals (drain and source) because of the unique atomic crystal electrical characteristics. Under the two-terminal operation mode, the erase/program current ratio can reach up to 104 with a stable retention property. Our study indicates that the conventional charge-trap memory cell can also realize the memory performance without the gate terminal based on novel two dimensional materials, which is meaningful for low power consumption and high integration density applications.

Ionospheric Measurements Using Environmental Sampling Techniques

NASA Technical Reports Server (NTRS)

Bourdeau, R. E.; Jackson, J. E.; Kane, J. A.; Serbu, G. P.

1960-01-01

Two rockets were flown to peak altitudes of 220 km in September 1959 to test various methods planned for future measurements of ionization parameters in the ionosphere, exosphere, and interplanetary plasma. The experiments used techniques which sample the ambient environment in the immediate vicinity of the research vehicle. Direct methods were chosen since indirect propagation techniques do not provide the temperatures of charged particles, are insensitive to ion densities, and cannot measure local electron densities under all conditions. Very encouraging results have been obtained from a preliminary analysis of data provided by one of the two flights. A new rf probe technique was successfully used to determine the electron density profile. This was indicated by its agreement with the results of a companion cw propagation experiment, particularly when the probe data were corrected for the effects of the ion sheath which surrounds the vehicle. The characteristics of this sheath were determined directly in flight by an electric field meter which provided the sheath field, and by a Langmuir probe which measured the total potential across the sheath. The electron temperatures deduced from the Langmuir probe data are greater than the neutral gas temperatures previously measured for the same location and season, but these measurements possibly were taken under different atmospheric conditions. Ion densities were calculated from the ion trap data for several altitudes ranging from 130 to 210 km and were found to be within 20 percent of the measured electron densities.

Equatorial heating and hemispheric decoupling effects on inner magnetospheric core plasma evolution

NASA Technical Reports Server (NTRS)

Lin, J.; Horwitz, J. L.; Wilson, G. R.; Brown, D. G.

1994-01-01

We have extended our previous semikinetic study of early stage plasmasphere refilling with perpendicular ion heating by removing the restriction that the northern and southern boundaries are identical and incorporating a generalized transport description for the electrons. This allows investigation of the effects of electron heating and a more realistic calculation of electric fields produced by ion and electron temperature anisotropies. The combination of perpendicular ion heating and parallel electron heating leads to an equatorial electrostatic potential peak, which tends to shield and decouple ion flows in the northern and southern hemispheres. Unequal ionospheric upflows in the northern and southern hemispheres lead to the development of distinctly asymmetric densities and other bulk parameters. At t = 5 hour after the initiation of refiling with different source densities (N(sub north) = 100 cu/cm, N(sub south) = 50 cu/cm), the maximum potential drops of the northern and southern hemispheres are 0.6 and 1.3 V, respectively. At this time the minimum ion densities are 11 and 7 cu/cm for the northern and southern hemispheres. DE 1 observations of asymmetric density profiles by Olsen may be consistent with these predictions. Termination of particle heating causes the reduction of equatorial potential and allows interhemispheric coupling. When the inflows from the ionospheres are reduced (as may occur after sunset), decreases in plasma density near the ionospheric regions are observed while the heated trapped ion population at the equator persists.

Laboratory studies of magnetic anomaly effects on electric potential distributions near the lunar surface

NASA Astrophysics Data System (ADS)

Wang, X.; Robertson, S. H.; Horanyi, M.; NASA Lunar Science Institute: Colorado CenterLunar Dust; Atmospheric Studies

2011-12-01

The Moon does not have a global magnetic field, unlike the Earth, rather it has strong crustal magnetic anomalies. Data from Lunar Prospector and SELENE (Kaguya) observed strong interactions between the solar wind and these localized magnetic fields. In the laboratory, a configuration of a horseshoe permanent magnet below an insulating surface is used as an analogue of lunar crustal magnetic anomalies. Plasmas are created above the surface by a hot filament discharge. Potential distributions are measured with an emissive probe and show complex spatial structures. In our experiments, electrons are magnetized with gyro-radii r smaller than the distance from the surface d (r < d) and ions are un-magnetized with r > d. Unlike negative charging on surfaces with no magnetic fields, the surface potential at the center of the magnetic dipole is found close to the plasma bulk potential. The surface charging is dominated by the cold unmagnetized ions, while the electrons are shielded away. A potential minimum is formed between the center of the surface and the bulk plasma, most likely caused by the trapped electrons between the two magnetic mirrors at the cusps. The value of the potential minimum with respect to the bulk plasma potential decreases with increasing plasma density and neutral pressure, indicating that the mirror-trapped electrons are scattered by electron-electron and electron-neutral collisions. The potential at the two cusps are found to be more negative due to the electrons following the magnetic field lines onto the surface.

Trapped electron losses by interactions with coherent VLF waves

NASA Astrophysics Data System (ADS)

Walt, M.; Inan, U. S.; Voss, H. D.

1996-07-01

VLF whistler waves from lightning enter the magnetosphere and cause the precipitation of energetic trapped electrons by pitch angle scattering. These events, known as Lightning-induced Electron Precipitation (LEP) have been detected by satellite and rocket instruments and by perturbations of VLF waves traveling in the earth-ionosphere waveguide. Detailed comparison of precipitating electron energy spectra and time dependence are in general agreement with calculations of trapped electron interactions with ducted whistler waves. In particular the temporal structure of the precipitation and the dynamic energy spectra of the electrons confirm this interpretation of the phenomena. There are discrepancies between observed and measured electron flux intensities and pitch angle distributions, but these quantities are sensitive to unknown wave intensities and trapped particle fluxes near the loss cone angle. The overall effect of lightning generated VLF waves on the lifetime of trapped electrons is still uncertain. The flux of electrons deflected into the bounce loss cone by a discrete whistler wave has been measured in a few cases. However, the area of the precipitation region is not known, and thus the total number of electrons lost in an LEP event can only be estimated. While the LEP events are dramatic, more important effects on trapped electrons may arise from the small but numerous deflections which increase the pitch angle diffusion rate of the electron population.

Electron spin resonance from NV centers in diamonds levitating in an ion trap

NASA Astrophysics Data System (ADS)

Delord, T.; Nicolas, L.; Schwab, L.; Hétet, G.

2017-03-01

We report observations of the electron spin resonance (ESR) of nitrogen vacancy centers in diamonds that are levitating in an ion trap. Using a needle Paul trap operating under ambient conditions, we demonstrate efficient microwave driving of the electronic spin and show that the spin properties of deposited diamond particles measured by the ESR are retained in the Paul trap. We also exploit the ESR signal to show angle stability of single trapped mono-crystals, a necessary step towards spin-controlled levitating macroscopic objects.

Accessibility of LDI saturated by electron trapping

NASA Astrophysics Data System (ADS)

Russell, David; Rose, Harvey A.

2000-10-01

The fact that trapped electrons, by flattening the distribution function near a Langmuir wave’s (LW’s) phase velocity, can reduce the damping of that wave, is well known. It has been predicted that this will lead to a reduction of the LDI threshold. Simulations and quasi-analytic theory have shown that this is the case, but not as has been previously suggested^1 because in general the LW response is slightly nonresonant and this departure from resonance can be as important as damping corrections to Vlasov dynamics^2. Detailed calculations of periodic solutions arising from the nonlinear evolution of the LDI, their stability, and dynamic transients, will be presented. The dependence of the nonlinear LDI threshold on the value of kλ D for the parent LW, together with loss of resonance limits on the LW amplitude, are translated into an LDI accessibility domain in the density temperature plane for backscatter SRS. 1. D. Mourenas, Phys. Plasmas 6, 1258 (1999). 2. H. A. Rose, 30th Anomalous Absorption Conference, 2000.

Peromyscus ranges at high and low population densities

USGS Publications Warehouse

Stickel, L.F.

1960-01-01

Live-trapping studies at the Patuxent Wildlife Research Center, Maryland, showed that the ranges of wood mice were larger when the population density was lower and smaller when the population density was higher. When the population density was about 1.3 male mice per acre in June 1954, the average distance recorded between traps after four or more captures was 258 feet. When the population density was about 4.1 male mice per acre in June 1957, the average distance was 119 feet. Differences were statistically significant. Females were so scarce at the low that comparisons could not be made for them. Examples from the literature also show that home range of a species may vary with population density. Other examples show that the range may vary with habitat, breeding condition and food supply. These variations in range size reduce the reliability of censuses in which relative methods are used: Lines of traps sample the population of a larger area when ranges are large than they do when ranges are small. Direct comparisons therefore will err in some degree. Error may be introduced also when line-trap data are transformed to per acre figures on the basis of home-range estimates made by area-trapping at another place or time. Variation in range size also can make it necessary to change area-trapping plans, for larger quadrants are needed when ranges are larger. It my be necessary to set traps closer together when ranges are small than when ranges are large.

Multiple trapping on a comb structure as a model of electron transport in disordered nanostructured semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sibatov, R. T., E-mail: ren-sib@bk.ru; Morozova, E. V., E-mail: kat-valezhanina@yandex.ru

2015-05-15

A model of dispersive transport in disordered nanostructured semiconductors has been proposed taking into account the percolation structure of a sample and joint action of several mechanisms. Topological and energy disorders have been simultaneously taken into account within the multiple trapping model on a comb structure modeling the percolation character of trajectories. The joint action of several mechanisms has been described within random walks with a mixture of waiting time distributions. Integral transport equations with fractional derivatives have been obtained for an arbitrary density of localized states. The kinetics of the transient current has been calculated within the proposed newmore » model in order to analyze time-of-flight experiments for nanostructured semiconductors.« less

Magnetism and Metal-Insulator Transition in Oxygen Deficient SrTiO 3

DOE PAGES

Lopez-Bezanilla, Alejandro; Ganesh, Panchapakesan; Littlewood, Peter B.

2015-09-08

First-principles calculations to study the electronic and magnetic properties of bulk, oxygen-deficient SrTiO 3 (STO) under different doping conditions and densities have been conducted. The appearance of magnetism in oxygen-deficient STO is not determined solely by the presence of a single oxygen vacancy but by the density of free carriers and the relative proximity of the vacant sites. We find that while an isolated vacancy behaves as a nonmagnetic double donor, manipulation of the doping conditions allows the stability of a single-donor state, with emergent local moments coupled ferromagnetically by carriers in the conduction band. Strong local lattice distortions enhancemore » the binding of this state. As a result, the energy of the in-gap local moment can be further tuned by orthorhombic strain. Consequently we find that the free-carrier density and strain are fundamental components to obtaining trapped spin-polarized electrons in oxygen-deficient STO, which may have important implications in the design of optical devices.« less

Progress Towards a Microtrap Array for Positron Storage

NASA Astrophysics Data System (ADS)

Narimannezhad, Alireza; Weber, Marc H.; Jennings, Joshah; Minnal, Chandrasekar; Lynn, Kelvin G.

2014-10-01

The storage of positrons has been a key for antimatter research and applications. One important goal is the attempt to reach higher densities of confined antimatter particles. Progress in this area is explored through a novel microtrap array with large length to radius aspect ratios and radii of the order of tens of microns. The proposed design consists of microtraps with substantially lower barrier potentials than conventional Penning-Malmberg traps arranged in parallel within a single magnet. Simulations showed positron plasma with 1E10 cm-3 density evolves toward a rigid-rotation phase in each microtrap while 10 V barriers confined the plasma axially. A trap of 4 cm length including more than 20,000 microtubes with 50 micron radii was fabricated and tested. Experiments conducted with electrons in a test structure addressing each microtube with a narrow beam will be described. This will explore the basic physics of the microtraps. Observed results were promising and they open a new avenue for manipulating high-density non-neutral plasmas. This work was supported by the Army Research Laboratory under Contract W9113M-09-C-0075, and the Office of Naval Research under Award #N00014-10-1-0543.

Quasiparticle and hybrid density functional methods in defect studies: An application to the nitrogen vacancy in GaN

NASA Astrophysics Data System (ADS)

Lewis, D. K.; Matsubara, M.; Bellotti, E.; Sharifzadeh, S.

2017-12-01

Defects in semiconductors can play a vital role in the performance of electronic devices, with native defects often dominating the electronic properties of the semiconductor. Understanding the relationship between structural defects and electronic function will be central to the design of new high-performance materials. In particular, it is necessary to quantitatively understand the energy and lifetime of electronic states associated with the defect. Here, we apply first-principles density functional theory (DFT) and many-body perturbation theory within the GW approximation to understand the nature and energy of the defect states associated with a charged nitrogen vacancy on the electronic properties of gallium nitride (GaN), as a model of a well-studied and important wide gap semiconductor grown with defects. We systematically investigate the sources of error associated with the GW approximation and the role of the underlying atomic structure on the predicted defect state energies. Additionally, analysis of the computed electronic density of states (DOS) reveals that there is one occupied defect state 0.2 eV below the valence band maximum and three unoccupied defect states at energy of 0.2-0.4 eV above the conduction band minimum, suggesting that this defect in the +1 charge state will not behave as a carrier trap. Furthermore, we compare the character and energy of the defect state obtained from GW and DFT using the HSE approximate density functional and find excellent agreement. This systematic study provides a more complete understanding of how to obtain quantitative defect energy states in bulk semiconductors.

A new method to determine the 2DEG density distribution for passivated AlGaN/AlN/GaN heterostructure field-effect transistors

NASA Astrophysics Data System (ADS)

Fu, Chen; Lin, Zhaojun; Cui, Peng; Lv, Yuanjie; Zhou, Yang; Dai, Gang; Luan, Chongbiao; Liu, Huan; Cheng, Aijie

2018-01-01

A new method to determine the two-dimensional electron gas (2DEG) density distribution of the AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) after the Si3N4 passivation process has been presented. Detailed device characteristics were investigated and better transport properties have been observed for the passivated devices. The strain variation and the influence of the surface trapping states were analyzed. By using the polarization Coulomb field (PCF) scattering theory, the 2DEG density after passivation was both quantitively and qualitatively determined, which has been increased by 45% under the access regions and decreased by 2% under the gate region.

Flux-driven algebraic damping of m = 1 diocotron mode

NASA Astrophysics Data System (ADS)

Chim, Chi Yung; O'Neil, Thomas

2015-11-01

Recent experiments with pure electron plasmas in a Malmberg-Penning trap have observed the algebraic damping of m = 1 diocotron modes. Transport due to small field asymmetries produce a low density halo of electrons moving radially outward from the plasma core, and the mode damping begins when the halo reaches the resonant radius rres, where f = mfE × B (rres) . The damping rate is proportional to the flux of halo particles through the resonant layer. The damping is related to, but distinct from spatial Landau damping, in which a linear wave-particle resonance produces exponential damping. This poster explains with analytic theory and simulations the new algebraic damping due to both mobility and diffusive fluxes. As electrons are swept around the ``cat's eye'' orbits of resonant wave-particle interaction, they form a dipole (m = 1) density distribution, and the electric field from this distribution produces an E × B drift of the core back to the axis, i.e. damps the m = 1 mode. Supported by National Science Foundation Grant PHY-1414570.

Macroparticle separation and plasma collimation in positively biased ducts in filtered vacuum arc deposition systems

NASA Astrophysics Data System (ADS)

Beilis, I. I.; Keidar, M.; Boxman, R. L.; Goldsmith, S.

1999-02-01

The objective of the present work was to determine the influence of positive bias on plasma and macroparticle (MP) flow in curved magnetized plasma ducts. The plasma bulk and sheath regions were analyzed. In the plasma bulk, the current density and electrical field component normal to the wall were obtained and used as boundary conditions for the near wall sheath region. In the sheath, a nonstationary model for MP charging and motion was developed. The solution of the hydrodynamic equations in the plasma when a positive bias is applied to the wall result in a radial electrical current. The electric field in the plasma bulk is generated by the separation between the magnetically confined electrons, and the ions, which are thrown outwards by the centrifugal force. The field increases with increasing positive bias. It was shown that MPs traveling in the sheath accumulate a charge which depends on the potential distribution, in contrast to MP charging in the quasineutral plasma where the charge depends on plasma density and electron temperature. MP trapping in the near-wall sheath was found. MPs may move in the sheath region along the wall by a repetitive process of electrostatic attraction to the wall, mechanical reflection and neutralization, followed by MP charging and attraction, etc. For example, titanium MPs with a radius less than 0.4 μm and with a velocity component normal to the wall of about 20 m/s are trapped if the sheath potential drop exceeds 20 V. It was obtained that the MP transmission fraction through filter decreases by more than few orders of magnitude due to the trapping effect when a bias potential of +100 V is applied between the wall and the plasma.

Density functional theory + U analysis of the electronic structure and defect chemistry of LSCF (La 0.5 Sr 0.5 Co 0.25 Fe 0.75 O 3-δ )

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ritzmann, Andrew M.; Dieterich, Johannes M.; Carter, Emily A.

2016-01-01

Reducing operating temperatures is a key step in making solid oxide fuel cell (SOFC) technology viable. A promising strategy for accomplishing this goal is employing mixed ion–electron conducting (MIEC) cathodes. La 1-xSr xCo 1-yFe yO 3-δ (LSCF) is the most widely employed MIEC cathode material; however, rational optimization of the composition of LSCF requires fundamental insight linking its electronic structure to its defect chemistry. To provide the necessary insight, density functional theory plus U (DFT+U) calculations are used to investigate the electronic structure of LSCF (xSr = 0.50, yCo = 0.25). The DFT+U calculations show that LSCF has a significantly different electronic structure than La 1-xSr xFeO 3 because of the addition of cobalt, but that minimal electronic structure differences exist between La 0.5Sr 0.5Co 0.25Fe 0.75O 3 and La 0.5Sr 0.5Co 0.5Fe 0.5O 3. The oxygen vacancy (Vmore » $$-\\atop{o}$$) formation energy (ΔEf,vac) is calculated for V$$-\\atop{o}$$ residing in different local environments within La 0.5Sr 0.5Co 0.25Fe 0.75O 3. These results show that Co-V$$-\\atop{o}$$-Co configurations have the highest ΔEf,vac, while Co-V$$-\\atop{o}$$-Fe have the lowest ΔEf,vac and may act as traps for V$$-\\atop{o}$$. We conclude that compositions with more Fe than Co are preferred because the additional Co-V$$-\\atop{o}$$-Co sites would lead to higher overall ΔEf,vac (and lower V$$-\\atop{o}$$ concentrations), while the trapping strength of the Image Co-V$$-\\atop{o}$$-Fe sites is relatively weak (~0.3 eV).« less

Correlation between border traps and exposed surface properties in gate recessed normally-off Al2O3/GaN MOSFET

NASA Astrophysics Data System (ADS)

Yin, Ruiyuan; Li, Yue; Sun, Yu; Wen, Cheng P.; Hao, Yilong; Wang, Maojun

2018-06-01

We report the effect of the gate recess process and the surface of as-etched GaN on the gate oxide quality and first reveal the correlation between border traps and exposed surface properties in normally-off Al2O3/GaN MOSFET. The inductively coupled plasma (ICP) dry etching gate recess with large damage presents a rough and active surface that is prone to form detrimental GaxO validated by atomic force microscopy and X-ray photoelectron spectroscopy. Lower drain current noise spectral density of the 1/f form and less dispersive ac transconductance are observed in GaN MOSFETs fabricated with oxygen assisted wet etching compared with devices based on ICP dry etching. One decade lower density of border traps is extracted in devices with wet etching according to the carrier number fluctuation model, which is consistent with the result from the ac transconductance method. Both methods show that the density of border traps is skewed towards the interface, indicating that GaxO is of higher trap density than the bulk gate oxide. GaxO located close to the interface is the major location of border traps. The damage-free oxidation assisted wet etching gate recess technique presents a relatively smooth and stable surface, resulting in lower border trap density, which would lead to better MOS channel quality and improved device reliability.

Isothermal relaxation current and microstructure changes of thermally aged polyester films impregnated by epoxy resin

NASA Astrophysics Data System (ADS)

Jiang, Xiongwei; Sun, Potao; Peng, Qingjun; Sima, Wenxia

2018-01-01

In this study, to understand the effect of thermal aging on polymer films degradation, specimens of polyester films impregnated by epoxy resin with different thermal aging temperatures (80 and 130 °C) and aging times (500, 1600, 2400 and 3000 h) are prepared, then charge de-trapping properties of specimens are investigated via the isothermal relaxation current (IRC) measurement, the distributions of trap level and its corresponding density are obtained based on the modified IRC model. It is found that the deep trap density increases remarkably at the beginning of thermal aging (before 1600 h), but it decreases obviously as the aging degree increases. At elevated aging temperature and, in particular considering the presence of air gap between two-layer insulation, the peak densities of deep traps decrease more significant in the late period of aging. It can be concluded that it is the released energy from de-trapping process leads to the fast degradation of insulation. Moreover, after thermal aging, the microstructure changes of crystallinity and molecular structures are analyzed via the x-ray diffraction experiment and Fourier transform infrared spectrometer. The results indicate that the variation of the deep trap density is closely linked with the changes of microstructure, a larger interface of crystalline/amorphous phase, more defects and broken chains caused by thermal aging form higher deep trap density stored in the samples.

Irradiation-induced Ag nanocluster nucleation in silicate glasses: Analogy with photography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Espiau de Lamaestre, R.; Fontainebleau Research Center, Corning SA, 77210 Avon; Bea, H.

2007-11-15

The synthesis of Ag nanoclusters in soda lime silicate glasses and silica was studied by optical absorption and electron spin resonance experiments under both low (gamma ray) and high (MeV ion) deposited energy density irradiation conditions. Both types of irradiation create electrons and holes whose density and thermal evolution--notably via their interaction with defects--are shown to determine the clustering and growth rates of Ag nanocrystals. We thus establish the influence of redox interactions of defects and silver (poly)ions. The mechanisms are similar to the latent image formation in photography: Irradiation-induced photoelectrons are trapped within the glass matrix, notably on dissolvedmore » noble metal ions and defects, which are thus neutralized (reverse oxidation reactions are also shown to exist). Annealing promotes metal atom diffusion, which, in turn, leads to cluster nuclei formation. The cluster density depends not only on the irradiation fluence but also--and primarily--on the density of deposited energy and the redox properties of the glass. Ion irradiation (i.e., large deposited energy density) is far more effective in cluster formation, despite its lower neutralization efficiency (from Ag{sup +} to Ag{sup 0}) as compared to gamma photon irradiation.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kawase, Kazumasa; Uehara, Yasushi; Teramoto, Akinobu

Silicon dioxide (SiO{sub 2}) films formed by chemical vapor deposition (CVD) were treated with oxygen radical oxidation using Ar/O{sub 2} plasma excited by microwave. The mass density depth profiles, carrier trap densities, and current-voltage characteristics of the radical-oxidized CVD-SiO{sub 2} films were investigated. The mass density depth profiles were estimated with x ray reflectivity measurement using synchrotron radiation of SPring-8. The carrier trap densities were estimated with x ray photoelectron spectroscopy time-dependent measurement. The mass densities of the radical-oxidized CVD-SiO{sub 2} films were increased near the SiO{sub 2} surface. The densities of the carrier trap centers in these films weremore » decreased. The leakage currents of the metal-oxide-semiconductor capacitors fabricated by using these films were reduced. It is probable that the insulation properties of the CVD-SiO{sub 2} film are improved by the increase in the mass density and the decrease in the carrier trap density caused by the restoration of the Si-O network with the radical oxidation.« less

Universal main magnetic focus ion source for production of highly charged ions

NASA Astrophysics Data System (ADS)

Ovsyannikov, V. P.; Nefiodov, A. V.; Levin, A. A.

2017-10-01

A novel room-temperature compact ion source has been developed for the efficient production of atomic ions by means of an electron beam with energy Ee and current density je controllable within wide ranges (100 eV ≲Ee ≲ 60 keV, 10 A/cm2 ≲je ≲ 20 kA/cm2). In the first experiments, the X-ray emission of Ir64+ ions has been measured. Based on a combination of two different techniques, the device can operate both as conventional Electron Beam Ion Source/Trap and novel Main Magnetic Focus Ion Source. The tunable electron-optical system allows for realizing laminar and turbulent electron flows in a single experimental setup. The device is intended primarily for fundamental and applied research at standard university laboratories.

Line-Trapping of Codling Moth (Lepidoptera: Tortricidae): A Novel Approach to Improving the Precision of Capture Numbers in Traps Monitoring Pest Density.

PubMed

Adams, C G; McGhee, P S; Schenker, J H; Gut, L J; Miller, J R

2017-08-01

This field study of codling moth, Cydia pomonella (L.), response to single versus multiple monitoring traps baited with codlemone demonstrates that precision of a given capture number is alarmingly poor when the population is held constant by releasing moths. Captures as low as zero and as high as 12 males per single trap are to be expected where the catch mode is three. Here, we demonstrate that the frequency of false negatives and overestimated positives for codling moth trapping can be substantially reduced by employing the tactic of line-trapping, where five traps were deployed 4 m apart along a row of apple trees. Codling moth traps spaced closely competed only slightly. Therefore, deploying five traps closely in a line is a sampling technique nearly as good as deploying five traps spaced widely. But line trapping offers a substantial savings in time and therefore cost when servicing aggregated versus distributed traps. As the science of pest management matures by mastering the ability to translate capture numbers into estimates of absolute pest density, it will be important to employ a tactic like line-trapping so as to shrink the troublesome variability associated with capture numbers in single traps that thwarts accurate decisions about if and when to spray. Line-trapping might similarly increase the reliability and utility of density estimates derived from capture numbers in monitoring traps for various pest and beneficial insects. © The Authors 2017. Published by Oxford University Press on behalf of Entomological Society of America.

Rigorous investigation of the reduced density matrix for the ideal Bose gas in harmonic traps by a loop-gas-like approach

DOE Office of Scientific and Technical Information (OSTI.GOV)

Beau, Mathieu, E-mail: mbeau@stp.dias.ie; Savoie, Baptiste, E-mail: baptiste.savoie@gmail.com

2014-05-15

In this paper, we rigorously investigate the reduced density matrix (RDM) associated to the ideal Bose gas in harmonic traps. We present a method based on a sum-decomposition of the RDM allowing to treat not only the isotropic trap, but also general anisotropic traps. When focusing on the isotropic trap, the method is analogous to the loop-gas approach developed by Mullin [“The loop-gas approach to Bose-Einstein condensation for trapped particles,” Am. J. Phys. 68(2), 120 (2000)]. Turning to the case of anisotropic traps, we examine the RDM for some anisotropic trap models corresponding to some quasi-1D and quasi-2D regimes. Formore » such models, we bring out an additional contribution in the local density of particles which arises from the mesoscopic loops. The close connection with the occurrence of generalized-Bose-Einstein condensation is discussed. Our loop-gas-like approach provides relevant information which can help guide numerical investigations on highly anisotropic systems based on the Path Integral Monte Carlo method.« less

High aspect ratio nanoholes in glass generated by femtosecond laser pulses with picosecond intervals

NASA Astrophysics Data System (ADS)

Ahn, Sanghoon; Choi, Jiyeon; Noh, Jiwhan; Cho, Sung-Hak

2018-02-01

Because of its potential uses, high aspect ratio nanostructures have been interested for last few decades. In order to generate nanostructures, various techniques have been attempted. Femtosecond laser ablation is one of techniques for generating nanostructures inside a transparent material. For generating nanostructures by femtosecond laser ablation, previous studies have been attempted beam shaping such as Bessel beam and temporal tailored beam. Both methods suppress electron excitation at near surface and initiate interference of photons at certain depth. Recent researches indicate that shape of nanostructures is related with temporal change of electron density and number of self-trapped excitons. In this study, we try to use the temporal change of electron density induced by femtosecond laser pulse for generating high aspect ratio nanoholes. In order to reveal the effect of temporal change of electron density, secondary pulses are irradiated from 100 to 1000 ps after the irradiation of first pulse. Our result shows that diameter of nanoholes is increasing and depth of nanoholes is decreasing as pulse to pulse interval is getting longer. With manipulating of pulse to pulse interval, we could generate high aspect ratio nanoholes with diameter of 250-350 nm and depth of 4∼6 μm inside a glass.

Hot-Electron-Induced Device Degradation during Gate-Induced Drain Leakage Stress

NASA Astrophysics Data System (ADS)

Kim, Kwang-Soo; Han, Chang-Hoon; Lee, Jun-Ki; Kim, Dong-Soo; Kim, Hyong-Joon; Shin, Joong-Shik; Lee, Hea-Beoum; Choi, Byoung-Deog

2012-11-01

We studied the interface state generation and electron trapping by hot electrons under gate-induced drain leakage (GIDL) stress in p-type metal oxide semiconductor field-effect transistors (P-MOSFETs), which are used as the high-voltage core circuit of flash memory devices. When negative voltage was applied to a drain in the off-state, a GIDL current was generated, but when high voltage was applied to the drain, electrons had a high energy. The hot electrons produced the interface state and electron trapping. As a result, the threshold voltage shifted and the off-state leakage current (trap-assisted drain junction leakage current) increased. On the other hand, electron trapping mitigated the energy band bending near the drain and thus suppressed the GIDL current generation.

Dual passivation of intrinsic defects at the compound semiconductor/oxide interface using an oxidant and a reductant.

PubMed

Kent, Tyler; Chagarov, Evgeniy; Edmonds, Mary; Droopad, Ravi; Kummel, Andrew C

2015-05-26

Studies have shown that metal oxide semiconductor field-effect transistors fabricated utilizing compound semiconductors as the channel are limited in their electrical performance. This is attributed to imperfections at the semiconductor/oxide interface which cause electronic trap states, resulting in inefficient modulation of the Fermi level. The physical origin of these states is still debated mainly because of the difficulty in assigning a particular electronic state to a specific physical defect. To gain insight into the exact source of the electronic trap states, density functional theory was employed to model the intrinsic physical defects on the InGaAs (2 × 4) surface and to model the effective passivation of these defects by utilizing both an oxidant and a reductant to eliminate metallic bonds and dangling-bond-induced strain at the interface. Scanning tunneling microscopy and spectroscopy were employed to experimentally determine the physical and electronic defects and to verify the effectiveness of dual passivation with an oxidant and a reductant. While subsurface chemisorption of oxidants on compound semiconductor substrates can be detrimental, it has been shown theoretically and experimentally that oxidants are critical to removing metallic defects at oxide/compound semiconductor interfaces present in nanoscale channels, oxides, and other nanostructures.

Investigation of trap states in Al2O3 InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors

NASA Astrophysics Data System (ADS)

Zhang, Peng; Zhao, Sheng-Lei; Xue, Jun-Shuai; Zhu, Jie-Jie; Ma, Xiao-Hua; Zhang, Jin-Cheng; Hao, Yue

2015-12-01

In this paper the trapping effects in Al2O3/In0.17Al0.83N/GaN MOS-HEMT (here, HEMT stands for high electron mobility transistor) are investigated by frequency-dependent capacitance and conductance analysis. The trap states are found at both the Al2O3/InAlN and InAlN/GaN interface. Trap states in InAlN/GaN heterostructure are determined to have mixed de-trapping mechanisms, emission, and tunneling. Part of the electrons captured in the trap states are likely to tunnel into the two-dimensional electron gas (2DEG) channel under serious band bending and stronger electric field peak caused by high Al content in the InAlN barrier, which explains the opposite voltage dependence of time constant and relation between the time constant and energy of the trap states. Project supported by the Program for National Natural Science Foundation of China (Grant Nos. 61404100 and 61306017).

Ion gyroradius effects on particle trapping in kinetic Alfven waves along auroral field lines

DOE Office of Scientific and Technical Information (OSTI.GOV)

Damiano, P. A.; Johnson, J. R.; Chaston, C. C.

In this study, a 2-D self-consistent hybrid gyrofluid-kinetic electron model is used to investigate Alfven wave propagation along dipolar magnetic field lines for a range of ion to electron temperature ratios. The focus of the investigation is on understanding the role of these effects on electron trapping in kinetic Alfven waves sourced in the plasma sheet and the role of this trapping in contributing to the overall electron energization at the ionosphere. This work also builds on our previous effort by considering a similar system in the limit of fixed initial parallel current, rather than fixed initial perpendicular electric field.more » It is found that the effects of particle trapping are strongest in the cold ion limit and the kinetic Alfven wave is able to carry trapped electrons a large distance along the field line yielding a relatively large net energization of the trapped electron population as the phase speed of the wave is increased. However, as the ion temperature is increased, the ability of the kinetic Alfven wave to carry and energize trapped electrons is reduced by more significant wave energy dispersion perpendicular to the ambient magnetic field which reduces the amplitude of the wave. This reduction of wave amplitude in turn reduces both the parallel current and the extent of the high-energy tails evident in the energized electron populations at the ionospheric boundary (which may serve to explain the limited extent of the broadband electron energization seen in observations). Here, even in the cold ion limit, trapping effects in kinetic Alfven waves lead to only modest electron energization for the parameters considered (on the order of tens of eV) and the primary energization of electrons to keV levels coincides with the arrival of the wave at the ionospheric boundary.« less

Ion gyroradius effects on particle trapping in kinetic Alfven waves along auroral field lines

DOE PAGES

Damiano, P. A.; Johnson, J. R.; Chaston, C. C.

2016-11-10

In this study, a 2-D self-consistent hybrid gyrofluid-kinetic electron model is used to investigate Alfven wave propagation along dipolar magnetic field lines for a range of ion to electron temperature ratios. The focus of the investigation is on understanding the role of these effects on electron trapping in kinetic Alfven waves sourced in the plasma sheet and the role of this trapping in contributing to the overall electron energization at the ionosphere. This work also builds on our previous effort by considering a similar system in the limit of fixed initial parallel current, rather than fixed initial perpendicular electric field.more » It is found that the effects of particle trapping are strongest in the cold ion limit and the kinetic Alfven wave is able to carry trapped electrons a large distance along the field line yielding a relatively large net energization of the trapped electron population as the phase speed of the wave is increased. However, as the ion temperature is increased, the ability of the kinetic Alfven wave to carry and energize trapped electrons is reduced by more significant wave energy dispersion perpendicular to the ambient magnetic field which reduces the amplitude of the wave. This reduction of wave amplitude in turn reduces both the parallel current and the extent of the high-energy tails evident in the energized electron populations at the ionospheric boundary (which may serve to explain the limited extent of the broadband electron energization seen in observations). Here, even in the cold ion limit, trapping effects in kinetic Alfven waves lead to only modest electron energization for the parameters considered (on the order of tens of eV) and the primary energization of electrons to keV levels coincides with the arrival of the wave at the ionospheric boundary.« less

Adiabatic Expansion of Electron Gas in a Magnetic Nozzle.

PubMed

Takahashi, Kazunori; Charles, Christine; Boswell, Rod; Ando, Akira

2018-01-26

A specially constructed experiment shows the near perfect adiabatic expansion of an ideal electron gas resulting in a polytropic index greater than 1.4, approaching the adiabatic value of 5/3, when removing electric fields from the system, while the polytropic index close to unity is observed when the electrons are trapped by the electric fields. The measurements were made on collisionless electrons in an argon plasma expanding in a magnetic nozzle. The collision lengths of all electron collision processes are greater than the scale length of the expansion, meaning the system cannot be in thermodynamic equilibrium, yet thermodynamic concepts can be used, with caution, in explaining the results. In particular, a Lorentz force, created by inhomogeneities in the radial plasma density, does work on the expanding magnetic field, reducing the internal energy of the electron gas that behaves as an adiabatically expanding ideal gas.

Adiabatic Expansion of Electron Gas in a Magnetic Nozzle

NASA Astrophysics Data System (ADS)

Takahashi, Kazunori; Charles, Christine; Boswell, Rod; Ando, Akira

2018-01-01

A specially constructed experiment shows the near perfect adiabatic expansion of an ideal electron gas resulting in a polytropic index greater than 1.4, approaching the adiabatic value of 5 /3 , when removing electric fields from the system, while the polytropic index close to unity is observed when the electrons are trapped by the electric fields. The measurements were made on collisionless electrons in an argon plasma expanding in a magnetic nozzle. The collision lengths of all electron collision processes are greater than the scale length of the expansion, meaning the system cannot be in thermodynamic equilibrium, yet thermodynamic concepts can be used, with caution, in explaining the results. In particular, a Lorentz force, created by inhomogeneities in the radial plasma density, does work on the expanding magnetic field, reducing the internal energy of the electron gas that behaves as an adiabatically expanding ideal gas.

New progress of high current gasdynamic ion source (invited)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Skalyga, V., E-mail: skalyga@ipfran.ru; Sidorov, A.; Vodopyanov, A.

2016-02-15

The experimental and theoretical research carried out at the Institute of Applied Physics resulted in development of a new type of electron cyclotron resonance ion sources (ECRISs)—the gasdynamic ECRIS. The gasdynamic ECRIS features a confinement mechanism in a magnetic trap that is different from Geller’s ECRIS confinement, i.e., the quasi-gasdynamic one similar to that in fusion mirror traps. Experimental studies of gasdynamic ECRIS were performed at Simple Mirror Ion Source (SMIS) 37 facility. The plasma was created by 37.5 and 75 GHz gyrotron radiation with power up to 100 kW. High frequency microwaves allowed to create and sustain plasma withmore » significant density (up to 8 × 10{sup 13} cm{sup −3}) and to maintain the main advantages of conventional ECRIS such as high ionization degree and low ion energy. Reaching such high plasma density relies on the fact that the critical density grows with the microwave frequency squared. High microwave power provided the average electron energy on a level of 50-300 eV enough for efficient ionization even at neutral gas pressure range of 10{sup −4}–10{sup −3} mbar. Gasdynamic ECRIS has demonstrated a good performance producing high current (100-300 mA) multi-charged ion beams with moderate average charge (Z = 4-5 for argon). Gasdynamic ECRIS has appeared to be especially effective in low emittance hydrogen and deuterium beams formation. Proton beams with current up to 500 emA and RMS emittance below 0.07 π ⋅ mm ⋅ mrad have been demonstrated in recent experiments.« less

Study of thermal aging effects on the conduction and trapping of charges in XLPE cable insulations under electron beam irradiation

NASA Astrophysics Data System (ADS)

Boukezzi, L.; Rondot, S.; Jbara, O.; Boubakeur, A.

2018-08-01

The effect of thermal aging on the charging phenomena in cross-linked polyethylene (XLPE) has been studied under electron beam irradiation in scanning electron microscope (SEM). The dynamic variation of trapped charge represents the trapping process of XLPE under electron beam irradiation. We have found that the trapped charge variation can be approximated by a first order exponential function. The amount of trapped charge presents enhanced values at the beginning of aging at lower temperatures (80 °C and 100 °C). This suggests the diffusion of cross-linking by-products to the surface of sample that acts as traps for injected electrons. The oxidation which is a very important form of XLPE degradation has an effect at the advanced stage of the aging process. For higher temperatures (120 °C and 140 °C), the taken part process in the evolution of the trapped charge is the crystallinity increase at the beginning of aging leading to the trapped charge decreasing, and the polar groups generated by thermo-oxidation process at the end of aging leading to the trapped charge increase. Variations of leakage current according to the aging time have quite similar trends with the dielectric losses factor and consequently some correlations must be made between charging mechanisms and the electrical behaviour of XLPE under thermal aging.

Particle transport in low-collisionality H-mode plasmas on DIII-D

DOE PAGES

Mordijck, Saskia; Wang, Xin; Doyle, Edward J.; ...

2015-10-05

In this article we show that changing from an ion temperature gradient (ITG) to trapped electron mode (TEM) dominant turbulence regime (based on linear gyrokinetic simulations) results experimentally in a strong density pump-out (defined as a reduction in line-averaged density) in low collisionality, low power H-mode plasmas. We vary the turbulence drive by changing the heating from pre-dominantly ion heatedusing neutral beam injection to electron heated using electron cyclotron heating, which changes the T e/T i ratio and the temperature gradients. Perturbed gas puff experiments show an increase in transport outside ρ = 0.6, through a strong increase in themore » perturbed diffusion coefficient and a decrease in the inward pinch. Linear gyrokinetic simulations with TGLF show an increase in the particle flux outside the mid-radius. In conjunction an increase in intermediate-scale length density fluctuations is observed, which indicates an increase in turbulence intensity at typical TEM wavelengths. However, although the experimental changes in particle transport agree with a change from ITG to TEM turbulence regimes, we do not observe a reduction in the core rotation at mid-radius, nor a rotation reversal.« less

Hierarchical models for estimating density from DNA mark-recapture studies

USGS Publications Warehouse

Gardner, B.; Royle, J. Andrew; Wegan, M.T.

2009-01-01

Genetic sampling is increasingly used as a tool by wildlife biologists and managers to estimate abundance and density of species. Typically, DNA is used to identify individuals captured in an array of traps ( e. g., baited hair snares) from which individual encounter histories are derived. Standard methods for estimating the size of a closed population can be applied to such data. However, due to the movement of individuals on and off the trapping array during sampling, the area over which individuals are exposed to trapping is unknown, and so obtaining unbiased estimates of density has proved difficult. We propose a hierarchical spatial capture-recapture model which contains explicit models for the spatial point process governing the distribution of individuals and their exposure to (via movement) and detection by traps. Detection probability is modeled as a function of each individual's distance to the trap. We applied this model to a black bear (Ursus americanus) study conducted in 2006 using a hair-snare trap array in the Adirondack region of New York, USA. We estimated the density of bears to be 0.159 bears/km2, which is lower than the estimated density (0.410 bears/km2) based on standard closed population techniques. A Bayesian analysis of the model is fully implemented in the software program WinBUGS.

Effects of trap type, placement and ash distribution on emerald ash borer captures in a low density site.

PubMed

McCullough, Deborah G; Siegert, Nathan W; Poland, Therese M; Pierce, Steven J; Ahn, Su Zie

2011-10-01

Effective methods for early detection of newly established, low density emerald ash borer (Agrilus planipennis Fairmaire) infestations are critically needed in North America. We assessed adult A. planipennis captures on four types of traps in a 16-ha site in central Michigan. The site was divided into 16 blocks, each comprised of four 50- by 50-m cells. Green ash trees (Fraxinus pennsylvanica Marshall) were inventoried by diameter class and ash phloem area was estimated for each cell. One trap type was randomly assigned to each cell in each block. Because initial sampling showed that A. planipennis density was extremely low, infested ash logs were introduced into the center of the site. In total, 87 beetles were captured during the summer. Purple double-decker traps baited with a blend of ash leaf volatiles, Manuka oil, and ethanol captured 65% of all A. planipennis beetles. Similarly baited, green double-decker traps captured 18% of the beetles, whereas sticky bands on girdled trees captured 11% of the beetles. Purple traps baited with Manuka oil and suspended in the canopies of live ash trees captured only 5% of the beetles. At least one beetle was captured on 81% of the purple double-decker traps, 56% of the green double-decker traps, 42% of sticky bands, and 25% of the canopy traps. Abundance of ash phloem near traps had no effect on captures and trap location and sun exposure had only weak effects on captures. Twelve girdled and 29 nongirdled trees were felled and sampled in winter. Current-year larvae were present in 100% of the girdled trees and 72% of the nongirdled trees, but larval density was five times higher on girdled than nongirdled trees.

Recombination in Perovskite Solar Cells: Significance of Grain Boundaries, Interface Traps, and Defect Ions.

PubMed

Sherkar, Tejas S; Momblona, Cristina; Gil-Escrig, Lidón; Ávila, Jorge; Sessolo, Michele; Bolink, Henk J; Koster, L Jan Anton

2017-05-12

Trap-assisted recombination, despite being lower as compared with traditional inorganic solar cells, is still the dominant recombination mechanism in perovskite solar cells (PSCs) and limits their efficiency. We investigate the attributes of the primary trap-assisted recombination channels (grain boundaries and interfaces) and their correlation to defect ions in PSCs. We achieve this by using a validated device model to fit the simulations to the experimental data of efficient vacuum-deposited p-i-n and n-i-p CH 3 NH 3 PbI 3 solar cells, including the light intensity dependence of the open-circuit voltage and fill factor. We find that, despite the presence of traps at interfaces and grain boundaries (GBs), their neutral (when filled with photogenerated charges) disposition along with the long-lived nature of holes leads to the high performance of PSCs. The sign of the traps (when filled) is of little importance in efficient solar cells with compact morphologies (fused GBs, low trap density). On the other hand, solar cells with noncompact morphologies (open GBs, high trap density) are sensitive to the sign of the traps and hence to the cell preparation methods. Even in the presence of traps at GBs, trap-assisted recombination at interfaces (between the transport layers and the perovskite) is the dominant loss mechanism. We find a direct correlation between the density of traps, the density of mobile ionic defects, and the degree of hysteresis observed in the current-voltage ( J - V ) characteristics. The presence of defect states or mobile ions not only limits the device performance but also plays a role in the J - V hysteresis.

Shaping of nested potentials for electron cooling of highly-charged ions in a cooler Penning trap

NASA Astrophysics Data System (ADS)

Paul, Stefan; Kootte, Brian; Lascar, Daniel; Gwinner, Gerald; Dilling, Jens; Titan Collaboration

2016-09-01

TRIUMF's Ion Trap for Atomic and Nuclear science (TITAN) is dedicated to mass spectrometry and decay spectroscopy of short-lived radioactive nuclides in a series of ion traps including a precision Penning trap. In order to boost the achievable precision of mass measurements TITAN deploys an Electron Beam Ion Trap (EBIT) providing Highly-Charged Ions (HCI). However, the charge breeding process in the EBIT leads to an increase in the ion bunch's energy spread which is detrimental to the overall precision gain. To reduce this effect a new cylindrical Cooler PEnning Trap (CPET) is being commissioned to sympathetically cool the HCI via a simultaneously trapped electron plasma. Simultaneous trapping of ions and electrons requires a high level of control over the nested potential landscape and sophisticated switching schemes for the voltages on CPET's multiple ring electrodes. For this purpose, we are currently setting up a new experimental control system for multi-channel voltage switching. The control system employs a Raspberry Pi communicating with a digital-to-analog board via a serial peripheral interface. We report on the implementation of the voltage control system and its performance with respect to electron and ion manipulation in CPET. University of British Columbia, Vancouver, BC, Canada.

Mapping of trap densities and hotspots in pentacene thin-film transistors by frequency-resolved scanning photoresponse microscopy.

PubMed

Westermeier, Christian; Fiebig, Matthias; Nickel, Bert

2013-10-25

Frequency-resolved scanning photoresponse microscopy of pentacene thin-film transistors is reported. The photoresponse pattern maps the in-plane distribution of trap states which is superimposed by the level of trap filling adjusted by the gate voltage of the transistor. Local hotspots in the photoresponse map thus indicate areas of high trap densities within the pentacene thin film. © 2013 WILEY-VCH Verlag GmbH 8 Co. KGaA, Weinheim.

Singlet and triplet excitons and charge polarons in cycloparaphenylenes. A density functional theory study

DOE PAGES

Liu, Jin; Adamska, Lyudmyla; Doorn, Stephen K.; ...

2015-05-14

Conformational structure and the electronic properties of various electronic excitations in cycloparaphenylenes (CPPs) are calculated using hybrid Density Functional Theory (DFT). The results demonstrate that wavefunctions of singlet and triplet excitons as well as the positive and negative polarons remain fully delocalized in CPPs. In contrast, these excitations in larger CPP molecules become localized on several phenyl rings, which are locally planarized, while the undeformed ground state geometry is preserved on the rest of the hoop. As evidenced by the measurements of bond-length alternation and dihedral angles, localized regions show stronger hybridization between neighboring bonds and thus enhanced electronic communication.more » This effect is even more significant in the smaller hoops, where phenyl rings have strong quinoid character in the ground state. Thus, upon excitation, electron–phonon coupling leads to the self-trapping of the electronic wavefunction and release of energy from fractions of an eV up to two eVs, depending on the type of excitation and the size of the hoop. The impact of such localization on electronic and optical properties of CPPs is systematically investigated and compared with the available experimental measurements.« less

A quantitative and spatially resolved analysis of the performance-bottleneck in high efficiency, planar hybrid perovskite solar cells

DOE PAGES

Draguta, Sergiu; Christians, Jeffrey A.; Morozov, Yurii V.; ...

2018-01-01

Hybrid perovskites represent a potential paradigm shift for the creation of low-cost solar cells. Current power conversion efficiencies (PCEs) exceed 22%. However, despite this, record PCEs are still far from their theoretical Shockley–Queisser limit of 31%. To increase these PCE values, there is a pressing need to understand, quantify and microscopically model charge recombination processes in full working devices. Here, we present a complete microscopic account of charge recombination processes in high efficiency (18–19% PCE) hybrid perovskite (mixed cation and methylammonium lead iodide) solar cells. We employ diffraction-limited optical measurements along with relevant kinetic modeling to establish, for the firstmore » time, local photoluminescence quantum yields, trap densities, trapping efficiencies, charge extraction efficiencies, quasi-Fermi-level splitting, and effective PCE estimates. Correlations between these spatially resolved parameters, in turn, allow us to conclude that intrinsic electron traps in the perovskite active layers limit the performance of these state-of-the-art hybrid perovskite solar cells.« less

Investigation of the in-plane and out-of-plane electrical properties of metallic nanoparticles in dielectric matrix thin films elaborated by atomic layer deposition

NASA Astrophysics Data System (ADS)

Thomas, D.; Puyoo, E.; Le Berre, M.; Militaru, L.; Koneti, S.; Malchère, A.; Epicier, T.; Roiban, L.; Albertini, D.; Sabac, A.; Calmon, F.

2017-11-01

Pt nanoparticles in a Al2O3 dielectric matrix thin films are elaborated by means of atomic layer deposition. These nanostructured thin films are integrated in vertical and planar test structures in order to assess both their in-plane and out-of-plane electrical properties. A shadow edge evaporation process is used to develop planar devices with electrode separation distances in the range of 30 nm. Both vertical and planar test structures show a Poole-Frenkel conduction mechanism. Low trap energy levels (<0.1 eV) are identified for the two test structures which indicates that the Pt islands themselves are not acting as traps in the PF mechanism. Furthermore, a more than three order of magnitude current density difference is observed between the two geometries. This electrical anisotropy is attributed to a large electron mobility difference in the in-plane and out-of-plane directions which can be related to different trap distributions in both directions.

Gas-phase Absorptions of {{\\rm{C}}}_{42}{{\\rm{H}}}_{18}^{+} near 8300 Å below 10 K: Astronomical Implications

NASA Astrophysics Data System (ADS)

Campbell, E. K.; Maier, J. P.

2017-11-01

The gas-phase electronic spectrum of {{{C}}}42{{{H}}}18+ ({{HBC}}+) with an origin band at 8281 \\mathringA has been measured below 10 {{K}} by photofragmentation of helium complexes ({{{C}}}42{{{H}}}18+{--}{{He}}n) in a radiofrequency trap. {{HBC}}+ is a medium-sized polycyclic aromatic hydrocarbon (PAH) cation, and using an ion trapping technique it has been possible to record a high-quality gas-phase spectrum to directly compare with astronomical observations. No diffuse interstellar bands (DIBs) have been reported at the wavelengths of the strongest absorption bands in the {{{C}}}42{{{H}}}18+ spectrum. Measurement of absolute absorption cross sections in the ion trap allows upper limits to the column density of this ion to be {10}12 {{cm}}-2, indicating that even PAH cations of this size, which are believed to be stable in the interstellar medium, should be excluded as candidates for at least the strong DIBs.

A quantitative and spatially resolved analysis of the performance-bottleneck in high efficiency, planar hybrid perovskite solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Draguta, Sergiu; Christians, Jeffrey A.; Morozov, Yurii V.

Hybrid perovskites represent a potential paradigm shift for the creation of low-cost solar cells. Current power conversion efficiencies (PCEs) exceed 22%. However, despite this, record PCEs are still far from their theoretical Shockley–Queisser limit of 31%. To increase these PCE values, there is a pressing need to understand, quantify and microscopically model charge recombination processes in full working devices. Here, we present a complete microscopic account of charge recombination processes in high efficiency (18–19% PCE) hybrid perovskite (mixed cation and methylammonium lead iodide) solar cells. We employ diffraction-limited optical measurements along with relevant kinetic modeling to establish, for the firstmore » time, local photoluminescence quantum yields, trap densities, trapping efficiencies, charge extraction efficiencies, quasi-Fermi-level splitting, and effective PCE estimates. Correlations between these spatially resolved parameters, in turn, allow us to conclude that intrinsic electron traps in the perovskite active layers limit the performance of these state-of-the-art hybrid perovskite solar cells.« less

Morphology and crystalline-phase-dependent electrical insulating properties in tailored polypropylene for HVDC cables

NASA Astrophysics Data System (ADS)

Zha, Jun-Wei; Yan, Hong-Da; Li, Wei-Kang; Dang, Zhi-Min

2016-11-01

Polypropylene (PP) has become one promising material to potentially replace the cross-link polyethylene used for high voltage direct current cables. Besides the isotactic polypropylene, the block polypropylene (b-PP) and random polypropylene (r-PP) can be synthesized through the copolymerization of ethylene and propylene molecules. In this letter, the effect of morphology and crystalline phases on the insulating electrical properties of PP was investigated. It was found that the introduction of polyethylene monomer resulted in the formation of β and γ phases in b-PP and r-PP. The results from the characteristic trap energy levels indicated that the β and γ phases could induce deep electron traps which enable to capture the carriers. And the space charge accumulation was obviously suppressed. Besides, the decreased electrical conductivity was observed in b-PP and r-PP. It is attributed to the existence of deep traps which can effectively reduce the carrier mobility and density in materials.

Low trap states in in situ SiN{sub x}/AlN/GaN metal-insulator-semiconductor structures grown by metal-organic chemical vapor deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, Xing; Ma, Jun; Jiang, Huaxing

2014-09-08

We report the use of SiN{sub x} grown in situ by metal-organic chemical vapor deposition as the gate dielectric for AlN/GaN metal-insulator-semiconductor (MIS) structures. Two kinds of trap states with different time constants were identified and characterized. In particular, the SiN{sub x}/AlN interface exhibits remarkably low trap state densities in the range of 10{sup 11}–10{sup 12 }cm{sup −2}eV{sup −1}. Transmission electron microscopy and X-ray photoelectron spectroscopy analyses revealed that the in situ SiN{sub x} layer can provide excellent passivation without causing chemical degradation to the AlN surface. These results imply the great potential of in situ SiN{sub x} as an effectivemore » gate dielectric for AlN/GaN MIS devices.« less

Charge Trapping in Interface Doped MNOS Structures.

DTIC Science & Technology

1981-07-01

Current density 55 0 JN Current density in nitride at gate 55 k Boltzmann’s constant: 1.38 x 10-23 joule /0K 85 m Effective mass of carrier 89 xi MIS...Trap Barrier Lowering by Applied Field: Poole-Frenkel Effect 90 vi Figure 3- 2: Thermally Stimulated Current System 92 Figure 3- 3: TSC Curves from a...Tungsten Atomic Concentration vs Effective Thickness 175 ix List of Tables Table 1-1: Trap Energy Levels and Spatial Densities 31 Table 2-1: Device

Comparison Of trap types and colors for capturing emerald ash borer adults at different population densities

Treesearch

Therese M. Poland; Deborah G. Mccullough

2014-01-01

Results of numerous trials to evaluate artificial trap designs and lures for detection of Agrilus planipennis Fairmaire, the emerald ash borer, have yielded inconsistent results, possibly because of different A. planipennis population densities in the field sites. In 2010 and 2011, we compared 1) green canopy traps, 2) purple...

Multi-channel transport experiments at Alcator C-Mod and comparison with gyrokinetic simulations

DOE Office of Scientific and Technical Information (OSTI.GOV)

White, A. E.; Howard, N. T.; Greenwald, M.

2013-05-15

Multi-channel transport experiments have been conducted in auxiliary heated (Ion Cyclotron Range of Frequencies) L-mode plasmas at Alcator C-Mod [Marmar and Alcator C-Mod Group, Fusion Sci. Technol. 51(3), 3261 (2007)]. These plasmas provide good diagnostic coverage for measurements of kinetic profiles, impurity transport, and turbulence (electron temperature and density fluctuations). In the experiments, a steady sawtoothing L-mode plasma with 1.2 MW of on-axis RF heating is established and density is scanned by 20%. Measured rotation profiles change from peaked to hollow in shape as density is increased, but electron density and impurity profiles remain peaked. Ion or electron heat fluxesmore » from the two plasmas are the same. The experimental results are compared directly to nonlinear gyrokinetic theory using synthetic diagnostics and the code GYRO [Candy and Waltz, J. Comput. Phys. 186, 545 (2003)]. We find good agreement with experimental ion heat flux, impurity particle transport, and trends in the fluctuation level ratio (T(tilde sign){sub e}/T{sub e})/(ñ{sub e}/n{sub e}), but underprediction of electron heat flux. We find that changes in momentum transport (rotation profiles changing from peaked to hollow) do not correlate with changes in particle transport, and also do not correlate with changes in linear mode dominance, e.g., Ion Temperature Gradient versus Trapped Electron Mode. The new C-Mod results suggest that the drives for momentum transport differ from drives for heat and particle transport. The experimental results are inconsistent with present quasilinear models, and the strong sensitivity of core rotation to density remains unexplained.« less

De-trapping Magnetic Mirror Confined Fast Electrons by Shear Alfvén Waves

NASA Astrophysics Data System (ADS)

Wang, Y.; Gekelman, W. N.; Pribyl, P.; Papadopoulos, K.

2013-12-01

Highly energetic electrons produced naturally or artificially can be trapped in the Earth's radiation belts for months, posing a danger to valuable space satellites. Concepts that can lead to radiation belts mitigation have drawn a great deal of interest. We report a clear demonstration in a controlled lab experiment that a shear Alfvén wave can effectively de-trap energetic electrons confined by a magnetic mirror field. The experiment is performed in a quiescent afterglow plasma in the Large Plasma Device (LaPD) at UCLA. A hot electron ring, along with hard x-rays of energies of 100 keV ~ 3 MeV, is generated by 2nd harmonic electron cyclotron resonance heating and is trapped in a magnetic mirror field (Rmirror = 1.1 ~ 4, Bmin = 438 Gauss). A shear Alfvén wave (fAlfvén ~ 0.5 fci, BAlfvén / B0 ~ 0.1%), is launched with a rotating magnetic field antenna with arbitrary polarization. Irradiated by the Alfvén wave, the loss of electrons is modulated at fAlfvén. The periodic loss of electrons is found to be related to the spatial distortion of the hot electron ring, and continues even after the termination of the wave. The effect is found to be caused only by the right-hand (electron diamagnetic direction) circularly polarized component of the Alfvén wave. Hard x-ray tomography, constructed from more than 1000 chord projections at each axial location, shows electrons are lost in both the radial and axial direction. X-ray spectroscopy shows electrons over a broad range of energy de-trapped by the Alfvén wave, which suggests a non-resonant nature of the de-trapping process. The de-trapping process is found to be accompanied by electro-magnetic fluctuations in the frequency range of 1~5 fLH, which are also modulated at the frequency of the Alfvén wave. To exclude the possible role of whistler waves in this electron de-trapping process, whistler waves at these frequencies are launched with an antenna in absence of the Alfvén wave and no significant electron loss found. Research is supported by an ONR MURI award, and conducted at the Basic Plasma Science Facility at UCLA funded by DoE and NSF. A schematic plot of the experiment, with measured Alfvén wave magnetic field vector over-plotted. The plot shows a plane transverse to the background magnetic mirror field, in which a population of fast electrons is trapped and formed a hot electron ring. It has been observed the shear Alfvén wave can effectively de-trap the mirror confined fast electrons.

Numerical simulation of the hydrodynamical combustion to strange quark matter in the trapped neutrino regime

NASA Astrophysics Data System (ADS)

Ouyed, Amir; Ouyed, Rachid; Jaikumar, Prashanth

2018-02-01

We simulate and study the microphysics of combustion (flame burning) of two flavored quark matter (u,d) to three flavored quark matter (u,d,s) in a trapped neutrino regime applicable to conditions prevailing in a hot proto-neutron star. The reaction-diffusion-advection equations for (u,d) to (u,d,s) combustion are coupled with neutrino transport, which is modeled through a flux-limited diffusion scheme. The flame speed is proportional to initial lepton fraction because of the release of electron chemical potential as heat, and reaches a steady-state burning speed of (0.001-0.008)c. We find that the burning speed is ultimately driven by the neutrino pressure gradient, given that the pressure gradient induced by quarks is opposed by the pressure gradients induced by electrons. This suggests, somewhat counter-intuitively, that the pressure gradients that drive the interface are controlled primarily by leptonic weak decays rather than by the quark Equation of State (EOS). In other words, the effects of the leptonic weak interaction, including the corresponding weak decay rates and the EOS of electrons and neutrinos, are at least as important as the uncertainties related to the EOS of high density matter. We find that for baryon number densities nB ≤ 0.35 fm-3, strong pressure gradients induced by leptonic weak decays drastically slow down the burning speed, which is thereafter controlled by the much slower burning process driven by backflowing downstream matter. We discuss the implications of our findings to proto-neutron stars.

Trapped Electron Model 2 (TEM-2)

DTIC Science & Technology

2010-04-25

density and computes sample correlations : 9t = ft-{ft)T, («6) £T = (stsf)T, («7) RT = {9t9j+i)r- (88) We have made the very safe...such as solar wind correlation studies, initial and boundary conditions for numerical simulations, and principal component analysis. We...O’Brien 19b. TELEPHONE NUMBER (include area code ) 571-307-3978 Standard Form 298 (Rev. 8-98) Prescribed by ANSI Std. 239.18 Ackmowledgments This work

X-ray Imaging and preliminary studies of the X-ray self-emission from an innovative plasma-trap based on the Bernstein waves heating mechanism

NASA Astrophysics Data System (ADS)

Caliri, C.; Romano, F. P.; Mascali, D.; Gammino, S.; Musumarra, A.; Castro, G.; Celona, L.; Neri, L.; Altana, C.

2013-10-01

Electron Cyclotron Resonance Ion Sources (ECRIS) are based on ECR heated plasmas emitting high fluxes of X-rays. Here we illustrate a pilot study of the X-ray emission from a compact plasma-trap in which an off-resonance microwave-plasma interaction has been attempted, highlighting a possible Bernstein-Waves based heating mechanism. EBWs-heating is obtained via the inner plasma EM-to-ES wave conversion and enables to reach densities much larger than the cut-off ones. At LNS-INFN, an innovative diagnostic technique based on the design of a Pinhole Camera (PHC) coupled to a CCD device for X-ray Imaging of the plasma (XRI) has been developed, in order to integrate X-ray traditional diagnostics (XRS). The complementary use of electrostatic probes measurements and X-ray diagnostics enabled us to gain knowledge about the high energy electrons density and temperature and about the spatial structure of the source. The combination of the experimental data with appropriate modeling of the plasma-source allowed to estimate the X-ray emission intensity in different energy domains (ranging from EUV up to Hard X-rays). The use of ECRIS as X-ray source for multidisciplinary applications, is now a concrete perspective due to the intense fluxes produced by the new plasma heating mechanism.

Enhancement of the Device Performance and the Stability with a Homojunction-structured Tungsten Indium Zinc Oxide Thin Film Transistor.

PubMed

Park, Hyun-Woo; Song, Aeran; Choi, Dukhyun; Kim, Hyung-Jun; Kwon, Jang-Yeon; Chung, Kwun-Bum

2017-09-14

Tungsten-indium-zinc-oxide thin-film transistors (WIZO-TFTs) were fabricated using a radio frequency (RF) co-sputtering system with two types of source/drain (S/D)-electrode material of conducting WIZO (homojunction structure) and the indium-tin oxide (ITO) (heterojunction structure) on the same WIZO active-channel layer. The electrical properties of the WIZO layers used in the S/D electrode and the active-channel layer were adjusted through oxygen partial pressure during the deposition process. To explain enhancements of the device performance and stability of the homojunction-structured WIZO-TFT, a systematic investigation of correlation between device performance and physical properties at the interface between the active layer and the S/D electrodes such as the contact resistance, surface/interfacial roughness, interfacial-trap density, and interfacial energy-level alignments was conducted. The homojunction-structured WIZO-TFT exhibited a lower contact resistance, smaller interfacial-trap density, and flatter interfacial roughness than the WIZO-TFT with the heterojunction structure. The 0.09 eV electron barrier of the homojunction-structured WIZO-TFT is lower than the 0.21 eV value that was obtained for the heterojunction-structured WIZO-TFT. This reduced electron barrier may be attributed to enhancements of device performance and stability, that are related to the carrier transport.

Long-Lived Pure Electron Plasma in Ring Trap-1

NASA Astrophysics Data System (ADS)

Saitoh, Haruhiko; Yoshida, Zensho; Morikawa, Junji; Watanabe, Sho; Yano, Yoshihisa; Suzuki, Junko

The Ring Trap-1 (RT-1) experiment succeeded in producing a long-lived (of the order 102 s), stable, non-neutral (pure electron) plasma. Electrons are confined by a magnetospheric dipole field. To eliminate a loss channel of the plasmas caused by support structures, a superconducting coil was magnetically levitated. This coil levitation drastically improved the confinement properties of the electron plasma compared to previous Prototype-Ring Trap (Proto-RT) experiments.

Numerical simulation of current-free double layers created in a helicon plasma device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rao, Sathyanarayan; Singh, Nagendra

2012-09-15

Two-dimensional simulations reveal that when radially confined source plasma with magnetized electrons and unmagnetized ions expands into diverging magnetic field B, a current-free double layer (CFDL) embedded in a conical density structure forms, as experimentally measured in the Australian helicon plasma device (HPD). The magnetized electrons follow the diverging B while the unmagnetized ions tend to flow directly downstream of the source, resulting in a radial electric field (E{sub Up-Tack }) structure, which couples the ion and electron flows. Ions are transversely (radially) accelerated by E{sub Up-Tack} on the high potential side of the double layer in the CFDL. Themore » accelerated ions are trapped near the conical surface, where E{sub Up-Tack} reverses direction. The potential structure of the CFDL is U-shaped and the plasma density is enhanced on the conical surface. The plasma density is severely depleted downstream of the parallel potential drop ({phi}{sub Double-Vertical-Line Double-Vertical-Line o}) in the CFDL; the density depletion and the potential drop are related by quasi-neutrality condition, including the divergence in the magnetic field and in the plasma flow in the conical structure. The potential and density structures, the CFDL spatial size, its electric field strengths and the electron and ion velocities and energy distributions in the CFDL are found to be in good agreements with those measured in the Australian experiment. The applicability of our results to measured axial potential profiles in magnetic nozzle experiments in HPDs is discussed.« less

Local condensate depletion at trap center under strong interactions

NASA Astrophysics Data System (ADS)

Yukalov, V. I.; Yukalova, E. P.

2018-04-01

Cold trapped Bose-condensed atoms, interacting via hard-sphere repulsive potentials are considered. Simple mean-field approximations show that the condensate distribution inside a harmonic trap always has the shape of a hump with the maximum condensate density occurring at the trap center. However, Monte Carlo simulations at high density and strong interactions display the condensate depletion at the trap center. The explanation of this effect of local condensate depletion at trap center is suggested in the frame of self-consistent theory of Bose-condensed systems. The depletion is shown to be due to the existence of the anomalous average that takes into account pair correlations and appears in systems with broken gauge symmetry.

Measuring the charge density of a tapered optical fiber using trapped microparticles.

PubMed

Kamitani, Kazuhiko; Muranaka, Takuya; Takashima, Hideaki; Fujiwara, Masazumi; Tanaka, Utako; Takeuchi, Shigeki; Urabe, Shinji

2016-03-07

We report the measurements of charge density of tapered optical fibers using charged particles confined in a linear Paul trap at ambient pressure. A tapered optical fiber is placed across the trap axis at a right angle, and polystyrene microparticles are trapped along the trap axis. The distance between the equilibrium position of a positively charged particle and the tapered fiber is used to estimate the amount of charge per unit length of the fiber without knowing the amount of charge of the trapped particle. The charge per unit length of a tapered fiber with a diameter of 1.6 μm was measured to be 2-1+3×10 -11 C/m.

Analysis of amorphous indium-gallium-zinc-oxide thin-film transistor contact metal using Pilling-Bedworth theory and a variable capacitance diode model

NASA Astrophysics Data System (ADS)

Kiani, Ahmed; Hasko, David G.; Milne, William I.; Flewitt, Andrew J.

2013-04-01

It is widely reported that threshold voltage and on-state current of amorphous indium-gallium-zinc-oxide bottom-gate thin-film transistors are strongly influenced by the choice of source/drain contact metal. Electrical characterisation of thin-film transistors indicates that the electrical properties depend on the type and thickness of the metal(s) used. Electron transport mechanisms and possibilities for control of the defect state density are discussed. Pilling-Bedworth theory for metal oxidation explains the interaction between contact metal and amorphous indium-gallium-zinc-oxide, which leads to significant trap formation. Charge trapping within these states leads to variable capacitance diode-like behavior and is shown to explain the thin-film transistor operation.

Defect characterization of proton irradiated GaAs pn-junction diodes with layers of InAs quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sato, Shin-ichiro, E-mail: sato.shinichiro@jaea.go.jp; Optoelectronics and Radiation Effects Branch, U.S. Naval Research Laboratory, Washington, DC 20375; Schmieder, Kenneth J.

2016-05-14

In order to expand the technology of III-V semiconductor devices with quantum structures to both terrestrial and space use, radiation induced defects as well as native defects generated in the quantum structures should be clarified. Electrically active defects in GaAs p{sup +}n diodes with embedded ten layers of InAs quantum dots (QDs) are investigated using Deep Level Transient Fourier Spectroscopy. Both majority carrier (electron) and minority carrier (hole) traps are characterized. In the devices of this study, GaP layers are embedded in between the QD layers to offset the compressive stress introduced during growth of InAs QDs. Devices are irradiatedmore » with high energy protons for three different fluences at room temperature in order to characterize radiation induced defects. Seven majority electron traps and one minority hole trap are found after proton irradiation. It is shown that four electron traps induced by proton irradiation increase in proportion to the fluence, whereas the EL2 trap, which appears before irradiation, is not affected by irradiation. These defects correspond to electron traps previously identified in GaAs. In addition, a 0.53 eV electron trap and a 0.14 eV hole trap are found in the QD layers before proton irradiation. It is shown that these native traps are also unaffected by irradiation. The nature of the 0.14 eV hole trap is thought to be Ga-vacancies in the GaP strain balancing layers.« less

Predicting infestation levels of the nantucket pine tip moth (Lepidoptera: Tortricidae) using pheromone traps

Treesearch

Christopher Asaro; C. Wayne Berisford

2001-01-01

There is considerable interest in using pheromone trap catches of the Nantucket pine tip moth, Rhyacionia frustrana (Conistock), to estimate or predict population density and damage. At six sites in the Georgia Piedmont, adult tip moths were monitored through one or more years using pheromone traps while population density and damage for each tip...

Do Organic Amendments Enhance the Nematode-Trapping Fungi Dactylellina haptotyla and Arthrobotrys oligospora?

PubMed

Jaffee, B A

2004-09-01

Soil cages (polyvinyl chloride pipe with mesh-covered ends) were used to determine how the quantity of two organic amendments affected the nematode-trapping fungi Dactylellina haptotyla and Arthrobotrys oligospora, which were studied independently in two different vineyards. Each cage contained 80 cm(3) of field soil (120 g dry weight equivalent), fungal inoculum (two alginate pellets, each weighing 1.9 mg and containing assimilative hyphae of one fungus), and dried grape or alfalfa leaves (0, 360, or 720 mg equivalent to 0, 4,500, or 9,000 kg/ha) with a C:N of 28:1 and 8:1, respectively. Cages were buried in the vineyards, recovered after 25 to 39 days, and returned to the laboratory where fungus population density and trapping were quantified. Dactylellina haptotyla population density and trapping were most enhanced by the smaller quantity of alfalfa amendment and were not enhanced by the larger quantity of alfalfa amendment. Arthrobotrys oligospora population density was most enhanced by the larger quantity of alfalfa amendment, but A. oligospora trapped few or no nematodes, regardless of amendment. Trapping and population density were correlated for D. haptotyla but not for A. oligospora.

Nonlinear dissipative and dispersive electrostatic structures in unmagnetized relativistic electron-ion plasma with warm ions and trapped electrons

NASA Astrophysics Data System (ADS)

Masood, W.; Hamid, Naira; Ilyas, Iffat; Siddiq, M.

2017-06-01

In this paper, we have investigated electrostatic solitary and shock waves in an unmagnetized relativistic electron-ion (ei) plasma in the presence of warm ions and trapped electrons. In this regard, we have derived the trapped Korteweg-de Vries Burgers (TKdVB) equation using the small amplitude approximation method, which to the best of our knowledge has not been investigated in plasmas. Since the TKdVB equation involves fractional nonlinearity on account of trapped electrons, we have employed a smartly crafted extension of the tangent hyperbolic method and presented the solution of the TKdVB equation in this paper. The limiting cases of the TKdVB equation yield trapped Burgers (TB) and trapped Korteweg-de Vries (TKdV) equations. We have also presented the solutions of TB and TKdV equations. We have also explored how the plasma parameters affect the propagation characteristics of the nonlinear structures obtained for these modified nonlinear partial differential equations. We hope that the present work will open new vistas of research in the nonlinear plasma theory both in classical and quantum plasmas.

Effectiveness of differing trap types for the detection of emerald ash borer (Coleoptera: Buprestidae).

PubMed

Marshall, Jordan M; Storer, Andrew J; Fraser, Ivich; Beachy, Jessica A; Mastro, Victor C

2009-08-01

The early detection of populations of a forest pest is important to begin initial control efforts, minimizing the risk of further spread and impact. Emerald ash borer (Agrilus planipennis Fairmaire) is an introduced pestiferous insect of ash (Fraxinus spp. L.) in North America. The effectiveness of trapping techniques, including girdled trap trees with sticky bands and purple prism traps, was tested in areas with low- and high-density populations of emerald ash borer. At both densities, large girdled trap trees (>30 cm diameter at breast height [dbh], 1.37 m in height) captured a higher rate of adult beetles per day than smaller trees. However, the odds of detecting emerald ash borer increased as the dbh of the tree increased by 1 cm for trap trees 15-25 cm dbh. Ash species used for the traps differed in the number of larvae per cubic centimeter of phloem. Emerald ash borer larvae were more likely to be detected below, compared with above, the crown base of the trap tree. While larval densities within a trap tree were related to the species of ash, adult capture rates were not. These results provide support for focusing state and regional detection programs on the detection of emerald ash borer adults. If bark peeling for larvae is incorporated into these programs, peeling efforts focused below the crown base may increase likelihood of identifying new infestations while reducing labor costs. Associating traps with larger trees ( approximately 25 cm dbh) may increase the odds of detecting low-density populations of emerald ash borer, possibly reducing the time between infestation establishment and implementing management strategies.

Effect of Trapped Ions on Shielding of a Charged Spherical Object in a Plasma

NASA Astrophysics Data System (ADS)

Lampe, Martin; Ganguli, Gurudas; Joyce, Glenn; Gavrishchaka, Valeriy

2001-04-01

The problem of electrostatic shielding around a small spherical collector immersed in plasma, and the related problem of electron and ion flow to the collector, date to the origins of plasma physics. Beginning with Langmuir[1], all calculations have neglected collisions, on the grounds that the mean free path is long compared to shielding length scales, i.e. the Debye length. However, investigators beginning with Bernstein and Rabinowitz[2] have known that negative-energy trapped ions, created by occasional collisions, might be important. We present an analytic calculation of the density of trapped and untrapped ions, self-consistent with a calculation of the potential. We show that under typical conditions for dust grains immersed in a discharge plasma, trapped ions dominate the shielding cloud in steady state, even in the limit of very long mean free path. As a result the shielded potential is quite different from the Debye form or the results of orbital motion limited theory. Collisions also modify the ion current to the grain, but to a lesser extent. [1]H. Mott-Smith and I. Langmuir, Phys. Rev. 28, 27 (1926). [2]I. Bernstein and I. Rabinowitz, Phys. Fluids 2,112(1959).

Enabling Exploration of Deep Space: High Density Storage of Antimatter

NASA Technical Reports Server (NTRS)

Smith, Gerald A.; Kramer, Kevin J.

1999-01-01

Portable electromagnetic antiproton traps are now in a state of realization. This allows facilities like NASA Marshall Space Flight Center to conduct antimatter research remote to production sites. MSFC is currently developing a trap to store 10(exp 12) antiprotons for a twenty-day half-life period to be used in future experiments including antimatter plasma guns, antimatter-initiated microfusion, and the synthesis of antihydrogen for space propulsion applications. In 1998, issues including design, safety and transportation were considered for the MSFC High Performance Antimatter Trap (HiPAT). Radial diffusion and annihilation losses of antiprotons prompted the use of a 4 Tesla superconducting magnet and a 20 KV electrostatic potential at 10(exp -12) Torr pressure. Cryogenic fluids used to maintain a trap temperature of 4K were sized accordingly to provide twenty days of stand-alone storage time (half-life). Procurement of the superconducting magnet with associated cryostat has been completed. The inner, ultra-high vacuum system with electrode structures has been fabricated, tested and delivered to MSFC along with the magnet and cryostat. Assembly of these systems is currently in progress. Testing under high vacuum conditions, using electrons and hydrogen ions will follow in the months ahead.

The Electronic Structure Signature of the Spin Cross-Over Transition of [Co(dpzca)2

NASA Astrophysics Data System (ADS)

Zhang, Xin; Mu, Sai; Liu, Yang; Luo, Jian; Zhang, Jian; N'Diaye, Alpha T.; Enders, Axel; Dowben, Peter A.

2018-05-01

The unoccupied electronic structure of the spin crossover molecule cobalt (II) N-(2-pyrazylcarbonyl)-2-pyrazinecarboxamide, [Co(dpzca)2] was investigated, using X-ray absorption spectroscopy (XAS) and compared with magnetometry (SQUID) measurements. The temperature dependence of the XAS and molecular magnetic susceptibility χmT are in general agreement for [Co(dpzca)2], and consistent with density functional theory (DFT). This agreement of magnetic susceptibility and X-ray absorption spectroscopy provides strong evidence that the changes in magnetic moment can be ascribed to changes in electronic structure. Calculations show the choice of Coulomb correlation energy U has a profound effect on the electronic structure of the low spin state, but has little influence on the electronic structure of the high spin state. In the temperature dependence of the XAS, there is also evidence of an X-ray induced excited state trapping for [Co(dpzca)2] at 15 K.

Properties and parameters of the electron beam injected into the mirror magnetic trap of a plasma accelerator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Andreev, V. V., E-mail: temple18@mail.ru; Novitsky, A. A.; Vinnichenko, L. A.

2016-03-15

The parameters of the injector of an axial plasma beam injected into a plasma accelerator operating on the basis of gyroresonance acceleration of electrons in the reverse magnetic field are determined. The trapping of the beam electrons into the regime of gyroresonance acceleration is numerically simulated by the particle- in-cell method. The optimal time of axial injection of the beam into a magnetic mirror trap is determined. The beam parameters satisfying the condition of efficient particle trapping into the gyromagnetic autoresonance regime are found.

Evolution of relativistic outer belt electrons during extended quiescent period

NASA Astrophysics Data System (ADS)

Jaynes, A. N.; Li, X.; Schiller, Q.; Blum, L. W.; Tu, W.; Malaspina, D.; Turner, D.; Baker, D. N.; Kanekal, S. G.; Blake, J. B.; Wygant, J. R.

2013-12-01

To effectively study loss due to precipitation of relativistic electron fluxes in the radiation belt, it is necessary to isolate this loss from the Dst effect and magnetopause shadowing by studying loss during a time of relatively quiet geomagnetic activity. We present a study of the slow decay of 200 keV - 2 MeV electron populations in the outer radiation belt during an extended quiescent period from ~15 Dec 2012 - 10 Jan 2013, wherein Dst never extended below -25 nT. We incorporate particle measurements from the Relativistic Electron and Proton Telescope integrated little experiment (REPTile) onboard the Colorado Student Space Weather Experiment (CSSWE) CubeSat with measurements from the Relativistic Electron Proton Telescope (REPT) and the Magnetic Electron Ion Spectrometer (MagEIS) on the Van Allen Probes twin spacecraft to understand the evolution of the electron populations across pitch angle and energy. First, we present REPTile measurements of the precipitating populations (along with trapped & quasi-trapped) at a low-earth orbit, offering a view into the loss cone that is not as easily resolved using only the Van Allen Probes. Electron loss to the atmosphere during this event is quantified through use of a precipitation loss model, using the REPTile measurements. Additionally, phase space densities are derived using pitch-angle-resolved flux data from the REPT and MagEIS instruments, as well as from THEMIS SST data. Finally, we present the net loss effect on the outer radiation belt content during this time, by incorporating the modeled precipitation loss (from REPTile measurements) with Van Allen Probes electron flux data. Hiss and chorus wave data, along with approximate plasmapause location, from Van Allen Probes' Electric Field and Waves Suite (EFW) completes the picture by suggesting mechanisms for the precipitation loss of relativistic electrons during quiet time.

Electron holes in inhomogeneous magnetic field: Electron heating and electron hole evolution

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vasko, I. Y.; Space Research Institute of Russian Academy of Science, Moscow; Agapitov, O. V.

Electron holes are electrostatic non-linear structures widely observed in the space plasma. In the present paper, we analyze the process of energy exchange between electrons trapped within electron hole, untrapped electrons, and an electron hole propagating in a weakly inhomogeneous magnetic field. We show that as the electron hole propagates into the region with stronger magnetic field, trapped electrons are heated due to the conservation of the first adiabatic invariant. At the same time, the electron hole amplitude may increase or decrease in dependence on properties of distribution functions of trapped and untrapped resonant electrons. The energy gain of trappedmore » electrons is due to the energy losses of untrapped electrons and/or decrease of the electron hole energy. We stress that taking into account the energy exchange with untrapped electrons increases the lifetime of electron holes in inhomogeneous magnetic field. We illustrate the suggested mechanism for small-amplitude Schamel's [Phys. Scr. T2, 228–237 (1982)] electron holes and show that during propagation along a positive magnetic field gradient their amplitude should grow. Neglect of the energy exchange with untrapped electrons would result in the electron hole dissipation with only modest heating factor of trapped electrons. The suggested mechanism may contribute to generation of suprathermal electron fluxes in the space plasma.« less

Imaging electronic trap states in perovskite thin films with combined fluorescence and femtosecond transient absorption microscopy

DOE PAGES

Xiao, Kai; Ma, Ying -Zhong; Simpson, Mary Jane; ...

2016-04-22

Charge carrier trapping degrades the performance of organometallic halide perovskite solar cells. To characterize the locations of electronic trap states in a heterogeneous photoactive layer, a spatially resolved approach is essential. Here, we report a comparative study on methylammonium lead tri-iodide perovskite thin films subject to different thermal annealing times using a combined photoluminescence (PL) and femtosecond transient absorption microscopy (TAM) approach to spatially map trap states. This approach coregisters the initially populated electronic excited states with the regions that recombine radiatively. Although the TAM images are relatively homogeneous for both samples, the corresponding PL images are highly structured. Themore » remarkable variation in the PL intensities as compared to transient absorption signal amplitude suggests spatially dependent PL quantum efficiency, indicative of trapping events. Furthermore, detailed analysis enables identification of two trapping regimes: a densely packed trapping region and a sparse trapping area that appear as unique spatial features in scaled PL maps.« less

Ultrahigh density alignment of carbon nanotube arrays by dielectrophoresis.

PubMed

Shekhar, Shashank; Stokes, Paul; Khondaker, Saiful I

2011-03-22

We report ultrahigh density assembly of aligned single-walled carbon nanotube (SWNT) two-dimensional arrays via AC dielectrophoresis using high-quality surfactant-free and stable SWNT solutions. After optimization of frequency and trapping time, we can reproducibly control the linear density of the SWNT between prefabricated electrodes from 0.5 SWNT/μm to more than 30 SWNT/μm by tuning the concentration of the nanotubes in the solution. Our maximum density of 30 SWNT/μm is the highest for aligned arrays via any solution processing technique reported so far. Further increase of SWNT concentration results in a dense array with multiple layers. We discuss how the orientation and density of the nanotubes vary with concentrations and channel lengths. Electrical measurement data show that the densely packed aligned arrays have low sheet resistances. Selective removal of metallic SWNTs via controlled electrical breakdown produced field-effect transistors with high current on-off ratio. Ultrahigh density alignment reported here will have important implications in fabricating high-quality devices for digital and analog electronics.

Improved understanding of the hot cathode current modes and mode transitions

NASA Astrophysics Data System (ADS)

Campanell, M. D.; Umansky, M. V.

2017-12-01

Hot cathodes are crucial components in a variety of plasma sources and applications, but they induce mode transitions and oscillations that are not fully understood. It is often assumed that negatively biased hot cathodes have a space-charge limited (SCL) sheath whenever the current is limited. Here, we show on theoretical grounds that a SCL sheath cannot persist. First, charge-exchange ions born within the virtual cathode (VC) region get trapped and build up. After the ion density reaches the electron density at a point in the VC, a new neutral region is formed and begins growing in space. In planar geometry, this ‘new plasma’ containing cold trapped ions and cold thermoelectrons grows towards the anode and fills the gap, leaving behind an inverse cathode sheath. This explains how transitions from temperature-limited mode to anode glow mode occur in thermionic discharge experiments with magnetic fields. If the hot cathode is a small filament in an unmagnetized plasma, the trapped ion region is predicted to grow radially in both directions, get expelled if it reaches the cathode, and reform periodically. Filament-induced current oscillations consistent with this prediction have been reported in experiments. Here, we set up planar geometry simulations of thermionic discharges and demonstrate several mode transition phenomena for the first time. Our continuum kinetic code lacks the noise of particle simulations, enabling a closer study of the temporal dynamics.

Study on influences of TiN capping layer on time-dependent dielectric breakdown characteristic of ultra-thin EOT high-k metal gate NMOSFET with kMC TDDB simulations

NASA Astrophysics Data System (ADS)

Xu, Hao; Yang, Hong; Luo, Wei-Chun; Xu, Ye-Feng; Wang, Yan-Rong; Tang, Bo; Wang, Wen-Wu; Qi, Lu-Wei; Li, Jun-Feng; Yan, Jiang; Zhu, Hui-Long; Zhao, Chao; Chen, Da-Peng; Ye, Tian-Chun

2016-08-01

The thickness effect of the TiN capping layer on the time dependent dielectric breakdown (TDDB) characteristic of ultra-thin EOT high-k metal gate NMOSFET is investigated in this paper. Based on experimental results, it is found that the device with a thicker TiN layer has a more promising reliability characteristic than that with a thinner TiN layer. From the charge pumping measurement and secondary ion mass spectroscopy (SIMS) analysis, it is indicated that the sample with the thicker TiN layer introduces more Cl passivation at the IL/Si interface and exhibits a lower interface trap density. In addition, the influences of interface and bulk trap density ratio N it/N ot are studied by TDDB simulations through combining percolation theory and the kinetic Monte Carlo (kMC) method. The lifetime reduction and Weibull slope lowering are explained by interface trap effects for TiN capping layers with different thicknesses. Project supported by the National High Technology Research and Development Program of China (Grant No. SS2015AA010601), the National Natural Science Foundation of China (Grant Nos. 61176091 and 61306129), and the Opening Project of Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of MicroElectronics of Chinese Academy of Sciences.

Intrinsic electron traps in atomic-layer deposited HfO{sub 2} insulators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cerbu, F.; Madia, O.; Afanas'ev, V. V.

2016-05-30

Analysis of photodepopulation of electron traps in HfO{sub 2} films grown by atomic layer deposition is shown to provide the trap energy distribution across the entire oxide bandgap. The presence is revealed of two kinds of deep electron traps energetically distributed at around E{sub t} ≈ 2.0 eV and E{sub t} ≈ 3.0 eV below the oxide conduction band. Comparison of the trapped electron energy distributions in HfO{sub 2} layers prepared using different precursors or subjected to thermal treatment suggests that these centers are intrinsic in origin. However, the common assumption that these would implicate O vacancies cannot explain the charging behaviormore » of HfO{sub 2}, suggesting that alternative defect models should be considered.« less

Vanadium substitution: A simple and economic way to improve UV sensing in ZnO

NASA Astrophysics Data System (ADS)

Srivastava, Tulika; Bajpai, Gaurav; Rathore, Gyanendra; Liu, Shun Wei; Biring, Sajal; Sen, Somaditya

2018-04-01

The UV sensing in pure ZnO is due to oxygen adsorption/desorption process from the ZnO surface. Vanadium doping improves the UV sensitivity of ZnO. The enhancement in UV sensitivity in vanadium-substituted ZnO is attributed to trapping and de-trapping of electrons at V4+ and V5+-related defect states. The V4+ state has an extra electron than the V5+ state. A V4+ to V5+ transformation happens with excitation of this electron to the conduction band, while a reverse trapping process liberates a visible light. An analytic study of response phenomenon reveals this trapping and de-trapping process.

New electron trap in p-type Czochralski silicon

NASA Technical Reports Server (NTRS)

Mao, B.-Y.; Lagowski, J.; Gatos, H. C.

1984-01-01

A new electron trap (acceptor level) was discovered in p-type Czochralski (CZ) silicon by current transient spectroscopy. The behavior of this trap was found to be similar to that of the oxygen thermal donors; thus, 450 C annealing increases the trap concentration while high-temperature annealing (1100-1200 C) leads to the virtual elimination of the trap. The new trap is not observed in either float-zone or n-type CZ silicon. Its energy level depends on the group III doping element in the sample. These findings suggest that the trap is related to oxygen, and probably to the acceptor impurity as well.

Evaluation of pseudostem trapping as a control measure against banana weevil, Cosmopolites sordidus (Coleoptera: Curculionidae) in Uganda.

PubMed

Gold, C S; Gold, C S; Okech, S H; Nokoe, S

2002-02-01

Controlled studies to determine the efficacy of pseudostem trapping in reducing adult populations of the banana weevil, Cosmopolites sordidus (Germar), were conducted under farmer conditions in Ntungamo district, Uganda. Twenty-seven farms were stratified on the basis of C. sordidus population density (estimated by mark and recapture methods) and divided among three treatments: (i) researcher-managed trapping (one trap per mat per month): (ii) farmer-managed trapping (trap intensity at discretion of farmer); and (iii) controls (no trapping). Intensive trapping (managed by researchers) resulted in significantly lower C. sordidus damage after one year. Over the same period, C. sordidus numbers declined by 61% on farms where trapping was managed by researchers, 53% where farmers managed trapping and 38% on farms without trapping; however, results varied greatly among farms and, overall, there was no significant effect of trapping on C. sordidus numbers. Moreover, there was only a weak relationship between the number of C. sordidus removed and the change in population density. Trapping success appeared to be affected by management levels and immigration from neighbouring farms. Although farmers were convinced that trapping was beneficial, adoption has been low due to resource requirements.

Photoluminescence, optically stimulated luminescence, and thermoluminescence study of RbMgF3:Eu2+

NASA Astrophysics Data System (ADS)

Dotzler, C.; Williams, G. V. M.; Rieser, U.; Robinson, J.

2009-01-01

Optically stimulated luminescence (OSL) and thermoluminescence are observed in polycrystalline RbMgF3:Eu2+ after x-ray, γ-ray, or β irradiation. The main electron traps are F-centers but there are other unidentified traps. The main hole traps at room temperature are probably Eu3+ and thermal or optical stimulation leads to electron-hole recombination at the Eu3+ site and Eu2+ emissions arising from P6J to S87/2 and 4f5d(Eg) to S87/2 transitions. We find that some of the electron traps can be emptied by infrared stimulation and all of the electron traps can be emptied by white light stimulation. The OSL dark decay is long and exceeds 5 days for traps that are emptied by white light stimulation after initial infrared bleaching. Our results show that this compound can be used as a radiation dosimeter for intermediate dose levels where the R87b self-dose does not significantly affect the dose reading.

Enhanced modified faraday cup for determination of power density distribution of electron beams

DOEpatents

Elmer, John W.; Teruya, Alan T.

2001-01-01

An improved tomographic technique for determining the power distribution of an electron or ion beam using electron beam profile data acquired by an enhanced modified Faraday cup to create an image of the current density in high and low power ion or electron beams. A refractory metal disk with a number of radially extending slits, one slit being about twice the width of the other slits, is placed above a Faraday cup. The electron or ion beam is swept in a circular pattern so that its path crosses each slit in a perpendicular manner, thus acquiring all the data needed for a reconstruction in one circular sweep. The enlarged slit enables orientation of the beam profile with respect to the coordinates of the welding chamber. A second disk having slits therein is positioned below the first slit disk and inside of the Faraday cup and provides a shield to eliminate the majority of secondary electrons and ions from leaving the Faraday cup. Also, a ring is located below the second slit disk to help minimize the amount of secondary electrons and ions from being produced. In addition, a beam trap is located in the Faraday cup to provide even more containment of the electron or ion beam when full beam current is being examined through the center hole of the modified Faraday cup.

Quantification of deep traps in nanocrystal solids, their electronic properties, and their influence on device behavior.

PubMed

Bozyigit, Deniz; Volk, Sebastian; Yarema, Olesya; Wood, Vanessa

2013-11-13

We implement three complementary techniques to quantify the number, energy, and electronic properties of trap states in nanocrystal (NC)-based devices. We demonstrate that, for a given technique, the ability to observe traps depends on the Fermi level position, highlighting the importance of a multitechnique approach that probes trap coupling to both the conduction and the valence bands. We then apply our protocol for characterizing traps to quantitatively explain the measured performances of PbS NC-based solar cells.

Microwave transmission efficiency and simulations of electron plasma in ELTRAP device

NASA Astrophysics Data System (ADS)

Ikram, M.; Mushtaq, A.; Ali, S.

2017-11-01

A Thomson backscattering experiment has been performed in a Penning-Malmberg device ELTRAP. To estimate the minimum sensitivity of diagnostics, we have computed the signal to noise ratio and found that the present bunch has a number density of 4.3 × 108 cm-3, which is three orders of magnitude less than the desired density of 1011 cm-3. To increase the signal level from the RF studies to the GHz range, the transmission efficiency from the rectangular waveguide orthogonally coupled to a prototype circular waveguide was experimentally analyzed on a test-bench. It is observed that the lengths of waveguides play an important role in the transmission efficiency and return loss. When the length of the optimum rectangular waveguide (>2 λg = 31 cm) is reduced to 7 cm, due to geometrical constraints of the ELTRAP device, consequently, the transmission efficiency is also reduced and shifts away from the maximum 3 GHz operating frequency. The useful frequency band is then reduced with the increasing length of the prototype circular waveguide (102 cm). Using the electromagnetic Particle-In-Cell simulations involving the electron cyclotron resonance heating (ECRH), we have utilized a magnetic field of 0.1 T resonating with 2.8 GHz RF drive during each time step (1 ps) having the power level of 0.04 V to the middle and to the end of the trap. A more efficient increase in the radial and azimuthal temperature profiles is observed as compared to the axial temperature profile. The reason is the use of ECRH to heat electrons in cyclotron motion, which is completely kinetic and magnetron motion which is almost entirely potential based. The axial motion interchanges in between the kinetic and potential with a slight enhancement in axial motion to maintain the total canonical angular momentum conserved. The temperature profile of the confined electron plasma increases with the variation of densities from 5 × 107 m-3 to 1012 m-3. The major heating effect occurs when the RF power is injected from the position close to one end with respect to the middle position of the trap.

Managing the horn fly (Diptera: Muscidae) using an electric walk-through fly trap.

PubMed

Watson, D W; Stringham, S M; Denning, S S; Washburn, S P; Poore, M H; Meier, A

2002-10-01

An electric walk-through fly trap was evaluated for the management of the horn fly, Hematobia irritans (L.), on dairy cattle in North Carolina over 2 yr. The trap relies on black lights and electrocution grids to attract and kill flies that are brushed from the cattle passing through. During the first season, horn fly densities were reduced from >1,400 to <200 flies per animal. Horn fly density averaged 269.2 +/- 25.8 on cattle using the walk-through fly trap twice daily, and 400.2 +/- 43.5 on the control group during the first year. The second year, seasonal mean horn fly density was 177.3 +/- 10.8 on cattle using the walk-through fly trap compared with 321.1 +/- 15.8 on the control group. No insecticides were used to control horn flies during this 2-yr study.

Dependence of mobility on shallow localized gap states in single-crystal organic field-effect-transistors

NASA Astrophysics Data System (ADS)

Butko, V. Y.; So, W.; Lang, D. V.; Chi, X.; Lashley, J. C.; Ramirez, A. P.

2009-12-01

In order to optimize the performance of molecular organic electronic devices it is important to study the intermolecular density of states and charge transport mechanisms in the environment of crystalline organic material. Using this approach in Field Effect Transistors (FETs) we show that material purification improves carrier mobility and decreases density of the deep localized electronic state. We also report a general exponential energy dependence of the density of localized states in a vicinity of the mobility edge (Fermi energies up to ∼7 times higher than the thermal energy (kT)) in a variety of the extensively purified molecular organic crystal FETs. This observation and the low activation energy of the order of ∼kT suggest that molecular structural misplacements of the sizes that are comparable with thermal molecular modes rather than impurity deep traps play a role in formation of these shallow states. We find that the charge carrier mobility in the FET nanochannels, μeff, is parameterized by two factors, the free-carrier mobility, μ0, and the ratio of the free carrier density to the total carrier density induced by gate bias. Crystalline FETs fabricated from rubrene, pentacene, and tetracene have a high free-carrier mobility, μ0∼50 cm2/Vs, at 300 K with lower device μeff dominated by localized shallow gap states. This relationship suggests that further improvements in electronic performance could be possible with enhanced device quality.

First-principles study of defects in TlBr

NASA Astrophysics Data System (ADS)

Du, Mao-Hua

2010-03-01

TlBr is a promising radiation detection material due to its high gamma-ray stopping efficiency, high resistivity (that reduces dark current and noise), large enough band gap of 2.68 eV (suitable for room temperature applications), and long electron carrier lifetime (for efficient collection of the radiation-generated carriers). The defect properties obtained from density functional calculations will be presented to discuss their roles in carrier trapping and recombination (which affects the carrier lifetime) and carrier compensation (which affects the resistivity).

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vilkas, M J; Ishikawa, Y; Trabert, E

Many-Body Perturbation Theory (MBPT) has been employed to calculate with high wavelength accuracy the extreme ultraviolet (EUV) spectra of F-like to P-like Xe ions. They discuss the reliability of the new calculations using the example of EUV beam-foil spectra of Xe, in which n = 3, {Delta}n = 0 transitions of Na-, Mg-, Al-like, and Si-like ions have been found to dominate. A further comparison is made with spectra from an electron beam ion trap, that is, from a device with a very different (low density) excitation balance.

Current sheet in plasma as a system with a controlling parameter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fridman, Yu. A., E-mail: yulya-fridman@yandex.ru; Chukbar, K. V., E-mail: Chukbar-KV@nrcki.ru

2015-08-15

A simple kinetic model describing stationary solutions with bifurcated and single-peaked current density profiles of a plane electron beam or current sheet in plasma is presented. A connection is established between the two-dimensional constructions arising in terms of the model and the one-dimensional considerations by Bernstein−Greene−Kruskal facilitating the reconstruction of the distribution function of trapped particles when both the profile of the electric potential and the free particles distribution function are known.

Radiation Dose from Reentrant Electrons

NASA Technical Reports Server (NTRS)

Badhwar, G.D.; Cleghorn, T. E.; Watts, J.

2003-01-01

In estimating the crew exposures during an EVA, the contribution of reentrant electrons has always been neglected. Although the flux of these electrons is small compared to the flux of trapped electrons, their energy spectrum extends to several GeV compared to about 7 MeV for trapped electrons. This is also true of splash electrons. Using the measured reentrant electron energy spectra, it is shown that the dose contribution of these electrons to the blood forming organs (BFO) is more than 10 times greater than that from the trapped electrons. The calculations also show that the dose-depth response is a very slowly changing function of depth, and thus adding reasonable amounts of additional shielding would not significantly lower the dose to BFO.

Design and performance of an instrument for electron impact tandem mass spectrometry and action spectroscopy of mass/charge selected macromolecular ions stored in RF ion trap*

NASA Astrophysics Data System (ADS)

Ranković, Milos Lj.; Giuliani, Alexandre; Milosavljević, Aleksandar R.

2016-06-01

A new apparatus was designed, coupling an electron gun with a linear quadrupole ion trap mass spectrometer, to perform m/ z (mass over charge) selected ion activation by electron impact for tandem mass spectrometry and action spectroscopy. We present in detail electron tracing simulations of a 300 eV electron beam inside the ion trap, design of the mechanical parts, electron optics and electronic circuits used in the experiment. We also report examples of electron impact activation tandem mass spectra for Ubiquitin protein, Substance P and Melittin peptides, at incident electron energies in the range from 280 eV to 300 eV.

Vacancy-type defects in Al2O3/GaN structure probed by monoenergetic positron beams

NASA Astrophysics Data System (ADS)

Uedono, Akira; Nabatame, Toshihide; Egger, Werner; Koschine, Tönjes; Hugenschmidt, Christoph; Dickmann, Marcel; Sumiya, Masatomo; Ishibashi, Shoji

2018-04-01

Defects in the Al2O3(25 nm)/GaN structure were probed by using monoenergetic positron beams. Al2O3 films were deposited on GaN by atomic layer deposition at 300 °C. Temperature treatment above 800 °C leads to the introduction of vacancy-type defects in GaN due to outdiffusion of atoms from GaN into Al2O3. The width of the damaged region was determined to be 40-50 nm from the Al2O3/GaN interface, and some of the vacancies were identified to act as electron trapping centers. In the Al2O3 film before and after annealing treatment at 300-900 °C, open spaces with three different sizes were found to coexist. The density of medium-sized open spaces started to decrease above 800 °C, which was associated with the interaction between GaN and Al2O3. Effects of the electron trapping/detrapping processes of interface states on the flat band voltage and the defects in GaN were also discussed.

Trapping of muscle relaxant methocarbamol degradation product by complexation with copper(II) ion: Spectroscopic and quantum chemical studies

NASA Astrophysics Data System (ADS)

Mansour, Ahmed M.; Shehab, Ola R.

2014-07-01

Structural properties of methocarbamol (Mcm) were extensively studied both experimentally and theoretically using FT IR, 1H NMR, UV-Vis., geometry optimization, Mulliken charge, and molecular electrostatic potential. Stability arises from hyper-conjugative interactions, charge delocalization and H-bonding was analyzed using natural bond orbital (NBO) analysis. Mcm was decomposed in ethanol/water mixture at 80 °C to guaifenesin [(RS)-3-(2-methoxyphenoxy)propane-1,2-diol] and carbamate ion [NH2COO-], where the degradation mechanism was explained by trapping the carbamate ion via the complexation with copper(II) ion. The structure of the isolated complex ([Cu(NH2COO)2(H2O)]ṡ4H2O) was elucidated by spectral, thermal, and magnetic tools. Electronic spectra were discussed by TD-DFT and the descriptions of frontier molecular orbitals and the relocations of the electron density were determined. Calculated g-tensor values showed best agreement with experimental values from EPR when carried out using both the B3LYP and B3PW91 functional.

Electron-phonon relaxation and excited electron distribution in gallium nitride

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhukov, V. P.; Donostia International Physics Center; Tyuterev, V. G., E-mail: valtyut00@mail.ru

2016-08-28

We develop a theory of energy relaxation in semiconductors and insulators highly excited by the long-acting external irradiation. We derive the equation for the non-equilibrium distribution function of excited electrons. The solution for this function breaks up into the sum of two contributions. The low-energy contribution is concentrated in a narrow range near the bottom of the conduction band. It has the typical form of a Fermi distribution with an effective temperature and chemical potential. The effective temperature and chemical potential in this low-energy term are determined by the intensity of carriers' generation, the speed of electron-phonon relaxation, rates ofmore » inter-band recombination, and electron capture on the defects. In addition, there is a substantial high-energy correction. This high-energy “tail” largely covers the conduction band. The shape of the high-energy “tail” strongly depends on the rate of electron-phonon relaxation but does not depend on the rates of recombination and trapping. We apply the theory to the calculation of a non-equilibrium distribution of electrons in an irradiated GaN. Probabilities of optical excitations from the valence to conduction band and electron-phonon coupling probabilities in GaN were calculated by the density functional perturbation theory. Our calculation of both parts of distribution function in gallium nitride shows that when the speed of the electron-phonon scattering is comparable with the rate of recombination and trapping then the contribution of the non-Fermi “tail” is comparable with that of the low-energy Fermi-like component. So the high-energy contribution can essentially affect the charge transport in the irradiated and highly doped semiconductors.« less

Determining the Critical Dose Threshold of Electron-Induced Electron Yield for Minimally Charged Highly Insulating Materials

NASA Astrophysics Data System (ADS)

Hoffmann, Ryan; Dennison, J. R.; Abbott, Jonathan

2006-03-01

When incident energetic electrons interact with a material, they excite electrons within the material to escape energies. The electron emission is quantified as the ratio of emitted electrons to incident particle flux, termed electron yield. Measuring the electron yield of insulators is difficult due to dynamic surface charge accumulation which directly affects landing energies and the potential barrier that emitted electrons must overcome. Our recent measurements of highly insulating materials have demonstrated significant changes in total yield curves and yield decay curves for very small electron doses equivalent to a trapped charge density of <10^10 electrons /cm^3. The Chung-Everhart theory provides a basic model for the behavior of the electron emission spectra which we relate to yield decay curves as charge is allowed to accumulate. Yield measurements as a function of dose for polyimide (Kapton^TM) and microcrystalline SiO2 will be presented. We use our data and model to address the question of whether there is a minimal dose threshold at which the accumulated charge no longer affects the yield.

Impurities, temperature, and density in a miniature electrostatic plasma and current source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Den Hartog, D.J.; Craig, D.J.; Fiksel, G.

1996-10-01

We have spectroscopically investigated the Sterling Scientific miniature electrostatic plasma source-a plasma gun. This gun is a clean source of high density (10{sup 19} - 10{sup 20} m{sup -3}), low temperature (5 - 15 eV) plasma. A key result of our investigation is that molybdenum from the gun electrodes is largely trapped in the internal gun discharge; only a small amount escapes in the plasma flowing out of the gun. In addition, the gun plasma parameters actually improve (even lower impurity contamination and higher ion temperature) when up to 1 kA of electron current is extracted from the gun viamore » the application of an external bias. This improvement occurs because the internal gun anode no longer acts as the current return for the internal gun discharge. The gun plasma is a virtual plasma electrode capable of sourcing an electron emission current density of 1 kA/cm{sup 2}. The high emission current, small size (3 - 4 cm diameter), and low impurity generation make this gun attractive for a variety of fusion and plasma technology applications.« less

A study of trap-limited conduction influenced by plasma damage on the source/drain regions of amorphous InGaZnO TFTs

NASA Astrophysics Data System (ADS)

Hsu, Chih-Chieh; Sun, Jhen-Kai; Wu, Chien-Hsun

2015-11-01

This study investigated electrical characteristics and stability variations of amorphous indium gallium zinc oxide thin film transistors (a-IGZO TFTs) with plasma damage on their source/drain (S/D) regions. The influence of the plasma damage on the TFT performance is absent as the channel length is 36-100 μm. When the channel length is decreased to 3-5 μm, the mobility (μ ) of the bottom gate TFT (BG TFT) with plasma damage is significantly degraded to 0.6 cm2 (V s)-1, which is much lower than 4.3 cm2 (V s)-1 of a damage-free BG TFT. We utilized the TFT passivation layer and the indium tin oxide (ITO), which was used as the pixel electrode material in the TFT backplane, to be the top gate insulator and top gate electrode of the defective BG TFT to obtain the defective dual-gate TFT. The mobility can be restored to 5.1 cm2 (V s)-1. Additional process steps are not required. Besides, this method is easily implemented and is fully compatible with TFT backplane fabrication process. The transfer curves, hysteresis characteristics, stabilities under constant voltage stress and constant current stress tests were measured to give evidences that the traps created by the plasma damage on the S/D regions indeed can affect electron transport. This trap-limited conduction can be improved by using the top gate. It was proven that the top gate was not for contributing an observably additional current. It was for inducing electrons to electrically passivate the plasma-induced defects near the back channel. Thus, the trapping/detrapping of the electrons transporting in the front channel can be reduced. The trap density near the Fermi level, hopping distance and hopping energy are 1.1  ×  1018 cm-3 eV-1, 162 Å, and 52 meV for the BG TFT with plasma damage on the S/D regions.

Secondary electron emission yield from high aspect ratio carbon velvet surfaces

DOE PAGES

Jin, Chenggang; Ottaviano, Angelica; Raitses, Yevgeny

2017-11-01

The plasma electrons bombarding a plasma-facing wall surface can induce secondary electron emission (SEE) from the wall. A strong SEE can enhance the power losses by reducing the wall sheath potential and thereby increasing the electron flux from the plasma to the wall. The use of the materials with surface roughness and the engineered materials with surface architecture is known to reduce the effective SEE by trapping the secondary electrons. In this work, we demonstrate a 65% reduction of SEE yield using a velvet material consisting of high aspect ratio carbon fibers. The measurements of SEE yield for different velvetmore » samples using the electron beam in vacuum demonstrate the dependence of the SEE yield on the fiber length and the packing density, which is strongly affected by the alignment of long velvet fibers with respect to the electron beam impinging on the velvet sample. Furthermore, the results of SEE measurements support the previous observations of the reduced SEE measured in Hall thrusters.« less

Secondary electron emission yield from high aspect ratio carbon velvet surfaces

NASA Astrophysics Data System (ADS)

Jin, Chenggang; Ottaviano, Angelica; Raitses, Yevgeny

2017-11-01

The plasma electrons bombarding a plasma-facing wall surface can induce secondary electron emission (SEE) from the wall. A strong SEE can enhance the power losses by reducing the wall sheath potential and thereby increasing the electron flux from the plasma to the wall. The use of the materials with surface roughness and the engineered materials with surface architecture is known to reduce the effective SEE by trapping the secondary electrons. In this work, we demonstrate a 65% reduction of SEE yield using a velvet material consisting of high aspect ratio carbon fibers. The measurements of SEE yield for different velvet samples using the electron beam in vacuum demonstrate the dependence of the SEE yield on the fiber length and the packing density, which is strongly affected by the alignment of long velvet fibers with respect to the electron beam impinging on the velvet sample. The results of SEE measurements support the previous observations of the reduced SEE measured in Hall thrusters.

Maximizing Information Yield From Pheromone-Baited Monitoring Traps: Estimating Plume Reach, Trapping Radius, and Absolute Density of Cydia pomonella (Lepidoptera: Tortricidae) in Michigan Apple

PubMed Central

Adams, C. G.; Schenker, J. H.; McGhee, P. S.; Gut, L. J.; Brunner, J. F.

2017-01-01

Abstract Novel methods of data analysis were used to interpret codling moth (Cydia pomonella) catch data from central-trap, multiple-release experiments using a standard codlemone-baited monitoring trap in commercial apple orchards not under mating disruption. The main objectives were to determine consistency and reliability for measures of: 1) the trapping radius, composed of the trap’s behaviorally effective plume reach and the maximum dispersive distance of a responder population; and 2) the proportion of the population present in the trapping area that is caught. Two moth release designs were used: 1) moth releases at regular intervals in the four cardinal directions, and 2) evenly distributed moth releases across entire approximately 18-ha orchard blocks using both high and low codling moth populations. For both release designs, at high populations, the mean proportion catch was 0.01, and for the even release of low populations, that value was approximately 0.02. Mean maximum dispersive distance for released codling moth males was approximately 260 m. Behaviorally effective plume reach for the standard codling moth trap was < 5 m, and total trapping area for a single trap was approximately 21 ha. These estimates were consistent across three growing seasons and are supported by extraordinarily high replication for this type of field experiment. Knowing the trapping area and mean proportion caught, catch number per single monitoring trap can be translated into absolute pest density using the equation: males per trapping area = catch per trapping area/proportion caught. Thus, catches of 1, 3, 10, and 30 codling moth males per trap translate to approximately 5, 14, 48, and 143 males/ha, respectively, and reflect equal densities of females, because the codling moth sex ratio is 1:1. Combined with life-table data on codling moth fecundity and mortality, along with data on crop yield per trapping area, this fundamental knowledge of how to interpret catch numbers will enable pest managers to make considerably more precise projections of damage and therefore more precise and reliable decisions on whether insecticide applications are justified. The principles and methods established here for estimating absolute codling moth density may be broadly applicable to pests generally and thereby could set a new standard for integrated pest management decisions based on trapping. PMID:28131989

Study of Volumetrically Heated Ultra-High Energy Density Plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rocca, Jorge J.

2016-10-27

Heating dense matter to millions of degrees is important for applications, but requires complex and expensive methods. The major goal of the project was to demonstrate using a compact laser the creation of a new ultra-high energy density plasma regime characterized by simultaneous extremely high temperature and high density, and to study it combining experimental measurements and advanced simulations. We have demonstrated that trapping of intense femtosecond laser pulses deep within ordered nanowire arrays can heat near solid density matter into a new ultra hot plasma regime. Extreme electron densities, and temperatures of several tens of million degrees were achievedmore » using laser pulses of only 0.5 J energy from a compact laser. Our x-ray spectra and simulations showed that extremely highly ionized plasma volumes several micrometers in depth are generated by irradiation of gold and Nickel nanowire arrays with femtosecond laser pulses of relativistic intensities. We obtained extraordinarily high degrees of ionization (e.g. we peeled 52 electrons from gold atoms, and up to 26 electrons from nickel atoms). In the process we generated Gigabar pressures only exceeded in the central hot spot of highly compressed thermonuclear fusion plasmas.. The plasma created after the dissolved wires expand, collide, and thermalize, is computed to have a thermal energy density of 0.3 GJ cm -3 and a pressure of 1-2 Gigabar. These are pressures only exceeded in highly compressed thermonuclear fusion plasmas. Scaling these results to higher laser intensities promises to create plasmas with temperatures and pressures exceeding those in the center of the sun.« less

Comparative evaluation of four mosquitoes sampling methods in rice irrigation schemes of lower Moshi, northern Tanzania.

PubMed

Kweka, Eliningaya J; Mahande, Aneth M

2009-07-06

Adult malaria vector sampling is the most important parameter for setting up an intervention and understanding disease dynamics in malaria endemic areas. The intervention will ideally be species-specific according to sampling output. It was the objective of this study to evaluate four sampling techniques, namely human landing catch, pit shelter, indoor resting collection and odour-baited entry trap. These four sampling methods were evaluated simultaneously for thirty days during October 2008, a season of low mosquitoes density and malaria transmission. These trapping methods were performed in one village for maximizing homogeneity in mosquito density. The cattle and man used in odour-baited entry trap were rotated between the chambers to avoid bias. A total of 3,074 mosquitoes were collected. Among these 1,780 (57.9%) were Anopheles arabiensis and 1,294 (42.1%) were Culex quinquefasciatus. Each trap sampled different number of mosquitoes, Indoor resting collection collected 335 (10.9%), Odour-baited entry trap-cow 1,404 (45.7%), Odour-baited entry trap-human 378 (12.3%), Pit shelter 562 (18.3%) and HLC 395 (12.8%). General linear model univariate analysis method was used, position of the trapping method had no effect on mosquito density catch (DF = 4, F = 35.596, P = 0.78). Days variation had no effect on the collected density too (DF = 29, F = 4.789, P = 0.09). The sampling techniques had significant impact on the caught mosquito densities (DF = 4, F = 34.636, P < 0.0001). The Wilcoxon pair-wise comparison between mosquitoes collected in human landing catch and pit shelter was significant (Z = -3.849, P < 0.0001), human landing catch versus Indoor resting collection was not significant (Z = -0.502, P = 0.615), human landing catch versus odour-baited entry trap-man was significant (Z = -2.687, P = 0.007), human landing catch versus odour-baited entry trap-cow was significant (Z = -3.127, P = 0.002). Odour-baited traps with different baits and pit shelter have shown high productivity in collecting higher densities of mosquitoes than human landing catch. These abilities are the possibilities of replacing the human landing catch practices for sampling malaria vectors in areas with An. arabiensis as malaria vectors. Further evaluations of these sampling methods need to be investigated is other areas with different species.

Electron capture dissociation in a branched radio-frequency ion trap.

PubMed

Baba, Takashi; Campbell, J Larry; Le Blanc, J C Yves; Hager, James W; Thomson, Bruce A

2015-01-06

We have developed a high-throughput electron capture dissociation (ECD) device coupled to a quadrupole time-of-flight mass spectrometer using novel branched radio frequency ion trap architecture. With this device, a low-energy electron beam can be injected orthogonally into the analytical ion beam with independent control of both the ion and electron beams. While ions and electrons can interact in a "flow-through" mode, we observed a large enhancement in ECD efficiency by introducing a short ion trapping period at the region of ion and electron beam intersection. This simultaneous trapping mode still provides up to five ECD spectra per second while operating in an information-dependent acquisition workflow. Coupled to liquid chromatography (LC), this LC-ECD workflow provides good sequence coverage for both trypsin and Lys C digests of bovine serum albumin, providing ECD spectra for doubly charged precursor ions with very good efficiency.

Synergistic Gating of Electro-Iono-Photoactive 2D Chalcogenide Neuristors: Coexistence of Hebbian and Homeostatic Synaptic Metaplasticity.

PubMed

John, Rohit Abraham; Liu, Fucai; Chien, Nguyen Anh; Kulkarni, Mohit R; Zhu, Chao; Fu, Qundong; Basu, Arindam; Liu, Zheng; Mathews, Nripan

2018-06-01

Emulation of brain-like signal processing with thin-film devices can lay the foundation for building artificially intelligent learning circuitry in future. Encompassing higher functionalities into single artificial neural elements will allow the development of robust neuromorphic circuitry emulating biological adaptation mechanisms with drastically lesser neural elements, mitigating strict process challenges and high circuit density requirements necessary to match the computational complexity of the human brain. Here, 2D transition metal di-chalcogenide (MoS 2 ) neuristors are designed to mimic intracellular ion endocytosis-exocytosis dynamics/neurotransmitter-release in chemical synapses using three approaches: (i) electronic-mode: a defect modulation approach where the traps at the semiconductor-dielectric interface are perturbed; (ii) ionotronic-mode: where electronic responses are modulated via ionic gating; and (iii) photoactive-mode: harnessing persistent photoconductivity or trap-assisted slow recombination mechanisms. Exploiting a novel multigated architecture incorporating electrical and optical biases, this incarnation not only addresses different charge-trapping probabilities to finely modulate the synaptic weights, but also amalgamates neuromodulation schemes to achieve "plasticity of plasticity-metaplasticity" via dynamic control of Hebbian spike-time dependent plasticity and homeostatic regulation. Coexistence of such multiple forms of synaptic plasticity increases the efficacy of memory storage and processing capacity of artificial neuristors, enabling design of highly efficient novel neural architectures. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Shellac Films as a Natural Dielectric Layer for Enhanced Electron Transport in Polymer Field-Effect Transistors.

PubMed

Baek, Seung Woon; Ha, Jong-Woon; Yoon, Minho; Hwang, Do-Hoon; Lee, Jiyoul

2018-06-06

Shellac, a natural polymer resin obtained from the secretions of lac bugs, was evaluated as a dielectric layer in organic field-effect transistors (OFETs) on the basis of donor (D)-acceptor (A)-type conjugated semiconducting copolymers. The measured dielectric constant and breakdown field of the shellac layer were ∼3.4 and 3.0 MV/cm, respectively, comparable with those of a poly(4-vinylphenol) (PVP) film, a commonly used dielectric material. Bottom-gate/top-contact OFETs were fabricated with shellac or PVP as the dielectric layer and one of three different D-A-type semiconducting copolymers as the active layer: poly(cyclopentadithiophene- alt-benzothiadiazole) with p-type characteristics, poly(naphthalene-bis(dicarboximide)- alt-bithiophene) [P(NDI2OD-T2)] with n-type characteristics, and poly(dithienyl-diketopyrrolopyrrole- alt-thienothiophene) [P(DPP2T-TT)] with ambipolar characteristics. The electrical characteristics of the fabricated OFETs were then measured. For all active layers, OFETs with a shellac film as the dielectric layer exhibited a better mobility than those with PVP. For example, the mobility of the OFET with a shellac dielectric and n-type P(NDI2OD-T2) active layer was approximately 2 orders of magnitude greater than that of the corresponding OFET with a PVP insulating layer. When P(DPP2T-TT) served as the active layer, the OFET with shellac as the dielectric exhibited ambipolar characteristics, whereas the corresponding OFET with the PVP dielectric operated only in hole-accumulation mode. The total density of states was analyzed using technology computer-aided design simulations. The results revealed that compared with the OFETs with PVP as the dielectric, the OFETs with shellac as the dielectric had a lower trap-site density at the polymer semiconductor/dielectric interface and much fewer acceptor-like trap sites acting as electron traps. These results demonstrate that shellac is a suitable dielectric material for D-A-type semiconducting copolymer-based OFETs, and the use of shellac as a dielectric layer facilitates electron transport at the interface with D-A-type copolymer channels.

Direct sampling during multiple sediment density flows reveals dynamic sediment transport and depositional environment in Monterey submarine canyon

NASA Astrophysics Data System (ADS)

Maier, K. L.; Gales, J. A.; Paull, C. K.; Gwiazda, R.; Rosenberger, K. J.; McGann, M.; Lundsten, E. M.; Anderson, K.; Talling, P.; Xu, J.; Parsons, D. R.; Barry, J.; Simmons, S.; Clare, M. A.; Carvajal, C.; Wolfson-Schwehr, M.; Sumner, E.; Cartigny, M.

2017-12-01

Sediment density flows were directly sampled with a coupled sediment trap-ADCP-instrument mooring array to evaluate the character and frequency of turbidity current events through Monterey Canyon, offshore California. This novel experiment aimed to provide links between globally significant sediment density flow processes and their resulting deposits. Eight to ten Anderson sediment traps were repeatedly deployed at 10 to 300 meters above the seafloor on six moorings anchored at 290 to 1850 meters water depth in the Monterey Canyon axial channel during 6-month deployments (October 2015 - April 2017). Anderson sediment traps include a funnel and intervalometer (discs released at set time intervals) above a meter-long tube, which preserves fine-scale stratigraphy and chronology. Photographs, multi-sensor logs, CT scans, and grain size analyses reveal layers from multiple sediment density flow events that carried sediment ranging from fine sand to granules. More sediment accumulation from sediment density flows, and from between flows, occurred in the upper canyon ( 300 - 800 m water depth) compared to the lower canyon ( 1300 - 1850 m water depth). Sediment accumulated in the traps during sediment density flows is sandy and becomes finer down-canyon. In the lower canyon where sediment directly sampled from density flows are clearly distinguished within the trap tubes, sands have sharp basal contacts, normal grading, and muddy tops that exhibit late-stage pulses. In at least two of the sediment density flows, the simultaneous low velocity and high backscatter measured by the ADCPs suggest that the trap only captured the collapsing end of a sediment density flow event. In the upper canyon, accumulation between sediment density flow events is twice as fast compared to the lower canyon; it is characterized by sub-cm-scale layers in muddy sediment that appear to have accumulated with daily to sub-daily frequency, likely related to known internal tidal dynamics also measured in the experiment. The comprehensive scale of the Monterey Coordinated Canyon Experiment allows us to integrate sediment traps with ADCP instrument data and seafloor core samples, which provides important new data to constrain how, when, and what sediment is transported through submarine canyons and how this is archived in seafloor deposits.

Device physics of hydrogenated amorphous silicon solar cells

NASA Astrophysics Data System (ADS)

Liang, Jianjun

This dissertation reports measurements on and modeling of hydrogenated amorphous silicon (a-Si:H) nip solar cells. Cells with thicknesses from 200-900 nm were prepared at United Solar Ovonic LLC. The current density-voltage (J-V) relations were measured under laser illumination (685 nm wavelength, up to 200 mW/cm2) over the temperature range 240 K--350 K. The changes in the cells' open-circuit voltage during extended laser illumination (light-soaking) were measured, as were the cell properties in several light-soaked states. The J-V properties of cells in their as-deposited and light-soaked states converge at low-temperatures. Electromodulation spectra for the cells were also measured over the range 240 K--350 K to determine the temperature-dependent bandgap. These experimental results were compared to computer calculations of J-V relations using the AMPS ((c)Pennsylvania State University) computer code. Bandtail parameters (for electron and hole mobility and recombination) were consistent with published drift-mobility and transient photocurrent measurements on a-Si:H. The open-circuit voltage and power density measurements on as-deposited cells, as a function of temperature and thickness, were predicted well. The calculations support a general "hole mobility limited" approach to analyzing a-Si:H solar cells, and indicate that the doped electrode layers, the as-deposited density of dangling bonds, and the electron mobility are of secondary importance to as-deposited cells. For light-soaked a-Si:H solar cells, incorporation of a density of dangling bonds in the computer calculations accounted satisfactorily for the power and open-circuit voltage measurements, including the low-temperature convergence effect. The calculations indicate that, in the light-soaked state at room-temperature, electron recombination is split nearly evenly between holes trapped in the valence bandtail and holes trapped on dangling bonds. The result supports Stutzmann, Jackson, and Tsai's 1985 conjecture that dangling bond creation results only from bandtail recombination events. We compared the predictions of the hydrogen-collision model proposed by Branz with the kinetics of the open-circuit voltage as light-soaking progressed. We obtained satisfactory agreement for the initial phases of light-soaking with the conjecture that only bandtail recombination leads to dangling bond creation, and the computer calculations for this recombination channel's diminishment in the cell as the dangling bond density grows.

Influence of quantizing magnetic field and Rashba effect on indium arsenide metal-oxide-semiconductor structure accumulation capacitance

NASA Astrophysics Data System (ADS)

Kovchavtsev, A. P.; Aksenov, M. S.; Tsarenko, A. V.; Nastovjak, A. E.; Pogosov, A. G.; Pokhabov, D. A.; Tereshchenko, O. E.; Valisheva, N. A.

2018-05-01

The accumulation capacitance oscillations behavior in the n-InAs metal-oxide-semiconductor structures with different densities of the built-in charge (Dbc) and the interface traps (Dit) at temperature 4.2 K in the magnetic field (B) 2-10 T, directed perpendicular to the semiconductor-dielectric interface, is studied. A decrease in the oscillation frequency and an increase in the capacitance oscillation amplitude are observed with the increase in B. At the same time, for a certain surface accumulation band bending, the influence of the Rashba effect, which is expressed in the oscillations decay and breakdown, is traced. The experimental capacitance-voltage curves are in a good agreement with the numeric simulation results of the self-consistent solution of Schrödinger and Poisson equations in the magnetic field, taking into account the quantization, nonparabolicity of dispersion law, and Fermi-Dirac electron statistics, with the allowance for the Rashba effect. The Landau quantum level broadening in a two-dimensional electron gas (Lorentzian-shaped density of states), due to the electron scattering mechanism, linearly depends on the magnetic field. The correlation between the interface electronic properties and the characteristic scattering times was established.

Novel organic semiconductors and a high capacitance gate dielectric for organic thin film transistors

NASA Astrophysics Data System (ADS)

Cai, Xiuyu

2007-12-01

Organic semiconductors are attracting more and more interest as a promising set of materials in the field of electronics research. This thesis focused on several new organic semiconductors and a novel high-kappa dielectric thin film (SrTiO3), which are two essential parts in Organic Thin Film Transistors (OTFTs). Structure and morphology of thin films of tricyanovinyl capped oligothiophenes were studied using atomic force microscopy and x-ray diffraction. Thin film transistors of one compound exhibited a reasonable electron mobility of 0.02 cm2/Vs. Temperature dependent measurements on the thin film transistor based on this compound revealed shallow trap states that were interpreted in terms of a multiple trap and release model. Moreover, inversion of the majority charge carrier type from electrons to holes was observed when the number of oligothiophene rings increased to six and ambipolar transport behavior was observed for tricyanovinyl sexithiophene. Another interesting organic semiconductor compound is the fluoalkylquarterthiophene, which showed ambipolar transport and large hysteresis in the transfer curve. Due to the bistable state at floating gate, the thin film transistor was exploited to study non-volatile floating gate memory effects. The temperature dependence of the retention time for this memory device revealed that the electron trapping was an activated process. Following the earlier work on hybrid acene-thiophene organic semiconductors, new compounds with similar structure were studied to reveal the mechanism of the air-stability exhibited by some compounds. They all formed highly crystalline thin films and showed reasonable device performances which are well correlated with the molecular structures, thin film microstructures, and solid state packing. The most air-stable compound had no observable degradation with exposure to air for 15 months. SrTiO3 was developed to be employed in OTFTs. Optimization of thin film growth was performed using reactive sputtering growth. Excellent SrTiO3 epitaixal thin film growth was revealed on conductive SrTiO 3:Nb substrates. A maximum charge carrier density of 1014 cm-2 was obtained based on pentacene and perylene diimide thin film transistors. Some new physical phenomena, such as step-like transfer characteristic curve and negative transconductance, were observed at such high field effect induced charge carrier density.

Complementary roles of benzylpiperazine and iodine 'vapor' in the strong enhancement of orange photoluminescence from CuI(1 1 1) thin film.

PubMed

Rawal, Takat B; Turkowski, Volodymyr; Rahman, Talat S

2014-05-07

We have employed density functional theory, corrected by the on-site electron-electron repulsion energy U, to clarify the mechanism behind the enhanced orange photoluminescence (PL) of a CuI(1 1 1) thin film conjugated with a benzylpiperazine (BZP) molecule in the presence of an iodine 'vapor' atom. Our results demonstrated that the adsorbed molecule and the 'vapor' atom play complementary roles in producing the PL. The latter, in attaching to the film surface, creates a hole-trapping surface state located ~0.25 eV above the valence band-edge of the film, in good agreement with ~0.2 eV reported in experiments. Upon photo-excitation of the BZP/CuI(1 1 1) system in the presence of surface iodine 'vapor' atoms, excited electrons are transferred into the conduction band of CuI, and holes are trapped by the 'vapor' atoms. These holes, in turn, quickly relax into the HOMO state of the BZP molecule, owing to the fact that the molecule adsorbs on the film surface in the immediate vicinity of a 'vapor' atom. Relaxed holes subsequently recombine with excited electrons in the conduction band of the CuI film, thereby producing a luminescence peak at ~2.1 eV, in qualitative agreement with experimental findings.

Mechanism of oxide thickness and temperature dependent current conduction in n+-polySi/SiO2/p-Si structures — a new analysis

NASA Astrophysics Data System (ADS)

Samanta, Piyas

2017-10-01

The conduction mechanism of gate leakage current through thermally grown silicon dioxide (SiO2) films on (100) p-type silicon has been investigated in detail under negative bias on the degenerately doped n-type polysilicon (n+-polySi) gate. The analysis utilizes the measured gate current density J G at high oxide fields E ox in 5.4 to 12 nm thick SiO2 films between 25 and 300 °C. The leakage current measured up to 300 °C was due to Fowler-Nordheim (FN) tunneling of electrons from the accumulated n +-polySi gate in conjunction with Poole Frenkel (PF) emission of trapped-electrons from the electron traps located at energy levels ranging from 0.6 to 1.12 eV (depending on the oxide thickness) below the SiO2 conduction band (CB). It was observed that PF emission current I PF dominates FN electron tunneling current I FN at oxide electric fields E ox between 6 and 10 MV/cm and throughout the temperature range studied here. Understanding of the mechanism of leakage current conduction through SiO2 films plays a crucial role in simulation of time-dependent dielectric breakdown (TDDB) of metaloxide-semiconductor (MOS) devices and to precisely predict the normal operating field or applied gate voltage for lifetime projection of the MOS integrated circuits.

Comparison of sampling methodologies and estimation of population parameters for a temporary fish ectoparasite.

PubMed

Artim, J M; Sikkel, P C

2016-08-01

Characterizing spatio-temporal variation in the density of organisms in a community is a crucial part of ecological study. However, doing so for small, motile, cryptic species presents multiple challenges, especially where multiple life history stages are involved. Gnathiid isopods are ecologically important marine ectoparasites, micropredators that live in substrate for most of their lives, emerging only once during each juvenile stage to feed on fish blood. Many gnathiid species are nocturnal and most have distinct substrate preferences. Studies of gnathiid use of habitat, exploitation of hosts, and population dynamics have used various trap designs to estimate rates of gnathiid emergence, study sensory ecology, and identify host susceptibility. In the studies reported here, we compare and contrast the performance of emergence, fish-baited and light trap designs, outline the key features of these traps, and determine some life cycle parameters derived from trap counts for the Eastern Caribbean coral-reef gnathiid, Gnathia marleyi. We also used counts from large emergence traps and light traps to estimate additional life cycle parameters, emergence rates, and total gnathiid density on substrate, and to calibrate the light trap design to provide estimates of rate of emergence and total gnathiid density in habitat not amenable to emergence trap deployment.

Calculating the trap density of states in organic field-effect transistors from experiment: A comparison of different methods

NASA Astrophysics Data System (ADS)

Kalb, Wolfgang L.; Batlogg, Bertram

2010-01-01

The spectral density of localized states in the band gap of pentacene (trap DOS) was determined with a pentacene-based thin-film transistor from measurements of the temperature dependence and gate-voltage dependence of the contact-corrected field-effect conductivity. Several analytical methods to calculate the trap DOS from the measured data were used to clarify, if the different methods lead to comparable results. We also used computer simulations to further test the results from the analytical methods. Most methods predict a trap DOS close to the valence-band edge that can be very well approximated by a single exponential function with a slope in the range of 50-60 meV and a trap density at the valence-band edge of ≈2×1021eV-1cm-3 . Interestingly, the trap DOS is always slightly steeper than exponential. An important finding is that the choice of the method to calculate the trap DOS from the measured data can have a considerable effect on the final result. We identify two specific simplifying assumptions that lead to significant errors in the trap DOS. The temperature dependence of the band mobility should generally not be neglected. Moreover, the assumption of a constant effective accumulation-layer thickness leads to a significant underestimation of the slope of the trap DOS.

A density functional theory study of the role of functionalized graphene particles as effective additives in power cable insulation

PubMed Central

Song, Shuwei; Zhao, Hong; Zheng, Xiaonan; Zhang, Hui; Wang, Ying; Han, Baozhong

2018-01-01

The role of a series of functionalized graphene additives in power cable insulation in suppressing the growth of electrical treeing and preventing the degradation of the polymer matrix has been investigated by density functional theory calculations. Bader charge analysis indicates that pristine, doped or defect graphene could effectively capture hot electrons to block their attack on cross-linked polyethylene (XLPE) because of the π–π conjugated unsaturated structures. Further exploration of the electronic properties in the interfacial region between the additives and XLPE shows that N-doped single-vacancy graphene, graphene oxide and B-, N-, Si- or P-doped graphene oxide have relatively strong physical interaction with XLPE to restrict its mobility and rather weak chemical activity to prevent the cleavage of the C–H or C–C bond, suggesting that they are all potential candidates as effective additives. The understanding of the features of functionalized graphene additives in trapping electrons and interfacial interaction will assist in the screening of promising additives as voltage stabilizers in power cables. PMID:29515821

A density functional theory study of the role of functionalized graphene particles as effective additives in power cable insulation.

PubMed

Song, Shuwei; Zhao, Hong; Zheng, Xiaonan; Zhang, Hui; Liu, Yang; Wang, Ying; Han, Baozhong

2018-02-01

The role of a series of functionalized graphene additives in power cable insulation in suppressing the growth of electrical treeing and preventing the degradation of the polymer matrix has been investigated by density functional theory calculations. Bader charge analysis indicates that pristine, doped or defect graphene could effectively capture hot electrons to block their attack on cross-linked polyethylene (XLPE) because of the π-π conjugated unsaturated structures. Further exploration of the electronic properties in the interfacial region between the additives and XLPE shows that N-doped single-vacancy graphene, graphene oxide and B-, N-, Si- or P-doped graphene oxide have relatively strong physical interaction with XLPE to restrict its mobility and rather weak chemical activity to prevent the cleavage of the C-H or C-C bond, suggesting that they are all potential candidates as effective additives. The understanding of the features of functionalized graphene additives in trapping electrons and interfacial interaction will assist in the screening of promising additives as voltage stabilizers in power cables.

Energetic particles and ionization in the nighttime middle and low latitude ionosphere

NASA Technical Reports Server (NTRS)

Voss, H. D.; Smith, L. G.

1977-01-01

Seven Nike Apache rockets, each equipped with an energetic particle spectrometer (12 E 80 keV) and electron-density experiments, were launched from Wallops Island, Virginia and Chilca, Peru, under varying geomagnetic conditions near midnight. At Wallops Island the energetic particle flux (E 40 keV) is found to be strongly dependent on Kp. The pitch-angle distribution is asymmetrical about a peak at 90 D signifying a predominately quasi-trapped flux and explaining the linear increase of count rate with altitute in the altitude region 120 to 200 km. The height-averaged ionization rates derived from the electron-density profiles are consistent with the rates calculated from the observed total particle flux for magnetic index Kp 3. In the region 90 to 110 km it is found that the nighttime ionization is primarily a result of Ly-beta radiation from the geocorona and interplanetary hydrogen for even very disturbed conditions. Below 90 km during rather disturbed conditions energetic electrons can be a significant ionization source. Two energetic particle precipitation zones have been identified at midlatitudes.

Flux-driven algebraic damping of m=2 diocotron mode

NASA Astrophysics Data System (ADS)

Chim, C. Y.; O'Neil, T. M.

2016-10-01

Recent experiments with pure electron plasmas in a Malmberg-Penning trap have observed the algebraic damping of m = 2 diocotron modes. Due to small field asymmetries a low density halo of electrons is transported radially outward from the plasma core, and the mode damping begins when the halo reaches the resonant radius rres, where f = mfE × B (rres) . The damping rate is proportional to the flux of halo particles through the resonant layer. The damping is related to, but distinct from the exponential spatial Landau damping in a linear wave-particle resonance. This poster uses analytic theory and simulations to explain the new flux-driven algebraic damping of the mode. As electrons are swept around the nonlinear ``cat's eye'' orbits of the resonant wave-particle interaction, they form a quadrupole (m = 2) density distribution, which sets up an electric field that acts back on the plasma core. The field causes an E × B drift motion that symmetrizes the core, i.e. damps the m = 2 mode. Supported by NSF Grant PHY-1414570, and DOE Grants DE-SC0002451.

Pulse I-V characterization of a nano-crystalline oxide device with sub-gap density of states

NASA Astrophysics Data System (ADS)

Kim, Taeho; Hur, Ji-Hyun; Jeon, Sanghun

2016-05-01

Understanding the charge trapping nature of nano-crystalline oxide semiconductor thin film transistors (TFTs) is one of the most important requirements for their successful application. In our investigation, we employed a fast-pulsed I-V technique for understanding the charge trapping phenomenon and for characterizing the intrinsic device performance of an amorphous/nano-crystalline indium-hafnium-zinc-oxide semiconductor TFT with varying density of states in the bulk. Because of the negligible transient charging effect with a very short pulse, the source-to-drain current obtained with the fast-pulsed I-V measurement was higher than that measured by the direct-current characterization method. This is because the fast-pulsed I-V technique provides a charge-trap free environment, suggesting that it is a representative device characterization methodology of TFTs. In addition, a pulsed source-to-drain current versus time plot was used to quantify the dynamic trapping behavior. We found that the charge trapping phenomenon in amorphous/nano-crystalline indium-hafnium-zinc-oxide TFTs is attributable to the charging/discharging of sub-gap density of states in the bulk and is dictated by multiple trap-to-trap processes.

Pulse I-V characterization of a nano-crystalline oxide device with sub-gap density of states.

PubMed

Kim, Taeho; Hur, Ji-Hyun; Jeon, Sanghun

2016-05-27

Understanding the charge trapping nature of nano-crystalline oxide semiconductor thin film transistors (TFTs) is one of the most important requirements for their successful application. In our investigation, we employed a fast-pulsed I-V technique for understanding the charge trapping phenomenon and for characterizing the intrinsic device performance of an amorphous/nano-crystalline indium-hafnium-zinc-oxide semiconductor TFT with varying density of states in the bulk. Because of the negligible transient charging effect with a very short pulse, the source-to-drain current obtained with the fast-pulsed I-V measurement was higher than that measured by the direct-current characterization method. This is because the fast-pulsed I-V technique provides a charge-trap free environment, suggesting that it is a representative device characterization methodology of TFTs. In addition, a pulsed source-to-drain current versus time plot was used to quantify the dynamic trapping behavior. We found that the charge trapping phenomenon in amorphous/nano-crystalline indium-hafnium-zinc-oxide TFTs is attributable to the charging/discharging of sub-gap density of states in the bulk and is dictated by multiple trap-to-trap processes.

Superfluid transition of homogeneous and trapped two-dimensional Bose gases.

PubMed

Holzmann, Markus; Baym, Gordon; Blaizot, Jean-Paul; Laloë, Franck

2007-01-30

Current experiments on atomic gases in highly anisotropic traps present the opportunity to study in detail the low temperature phases of two-dimensional inhomogeneous systems. Although, in an ideal gas, the trapping potential favors Bose-Einstein condensation at finite temperature, interactions tend to destabilize the condensate, leading to a superfluid Kosterlitz-Thouless-Berezinskii phase with a finite superfluid mass density but no long-range order, as in homogeneous fluids. The transition in homogeneous systems is conveniently described in terms of dissociation of topological defects (vortex-antivortex pairs). However, trapped two-dimensional gases are more directly approached by generalizing the microscopic theory of the homogeneous gas. In this paper, we first derive, via a diagrammatic expansion, the scaling structure near the phase transition in a homogeneous system, and then study the effects of a trapping potential in the local density approximation. We find that a weakly interacting trapped gas undergoes a Kosterlitz-Thouless-Berezinskii transition from the normal state at a temperature slightly below the Bose-Einstein transition temperature of the ideal gas. The characteristic finite superfluid mass density of a homogeneous system just below the transition becomes strongly suppressed in a trapped gas.

Stochastic three-wave interaction in flaring solar loops

NASA Technical Reports Server (NTRS)

Vlahos, L.; Sharma, R. R.; Papadopoulos, K.

1983-01-01

A model is proposed for the dynamic structure of high-frequency microwave bursts. The dynamic component is attributed to beams of precipitating electrons which generate electrostatic waves in the upper hybrid branch. Coherent upconversion of the electrostatic waves to electromagnetic waves produces an intrinsically stochastic emission component which is superposed on the gyrosynchrotron continuum generated by stably trapped electron fluxes. The role of the density and temperature of the ambient plasma in the wave growth and the transition of the three wave upconversion to stochastic, despite the stationarity of the energy source, are discussed in detail. The model appears to reproduce the observational features for reasonable parameters of the solar flare plasma.

H-tailored surface conductivity in narrow band gap In(AsN)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Velichko, A. V., E-mail: amalia.patane@nottingham.ac.uk, E-mail: anton.velychko@nottingham.ac.uk; Patanè, A., E-mail: amalia.patane@nottingham.ac.uk, E-mail: anton.velychko@nottingham.ac.uk; Makarovsky, O.

2015-01-12

We show that the n-type conductivity of the narrow band gap In(AsN) alloy can be increased within a thin (∼100 nm) channel below the surface by the controlled incorporation of H-atoms. This channel has a large electron sheet density of ∼10{sup 18 }m{sup −2} and a high electron mobility (μ > 0.1 m{sup 2}V{sup −1}s{sup −1} at low and room temperature). For a fixed dose of impinging H-atoms, its width decreases with the increase in concentration of N-atoms that act as H-traps thus forming N-H donor complexes near the surface.

Comparison of photoemission characteristics between square and circular wire array GaAs photocathodes.

PubMed

Deng, Wenjuan; Peng, Xincun; Zou, Jijun; Wang, Weilu; Liu, Yun; Zhang, Tao; Zhang, Yijun; Zhang, Daoli

2017-11-10

Two types of negative electron affinity gallium arsenide (GaAs) wire array photocathodes were fabricated by reactive ion etching and inductively coupled plasma etching of bulk GaAs material. High density GaAs wire arrays with high periodicity and good morphology were verified using scanning electron microscopy, and photoluminescence spectra confirmed the wire arrays had good crystalline quality. Reflection spectra showed that circular GaAs wire arrays had superior light trapping compared with square ones. However, after Cs/O activation, the square GaAs wire array photocathodes showed enhanced spectral response. The integral sensitivity of the square wire array photocathodes was approximately 2.8 times that of the circular arrays.

Ion acceleration and non-Maxwellian electron distributions in a low collisionality, high power helicon plasma source

NASA Astrophysics Data System (ADS)

Li, Yan; Sung, Yung-Ta; Scharer, John

2015-11-01

Ion acceleration through plasma double layer and non-Maxwellian two temperature electron distributions have been observed in Madison Helicon Experiment (MadHeX) operated in high RF power (>1000 W) and low Ar pressure (0.17 mtorr) inductive mode. By applying Optical Emission Spectroscopy (OES) cross-checked with an RF-compensated Langmuir probe (at 13.56 MHz and its second and third harmonics), the fast (>80 eV), untrapped electrons downstream of the double layer have a higher temperature of 13 eV than the trapped bulk electrons upstream with a temperature of 4 eV. The reduction of plasma potential and density observed in the double layer region require an upstream temperature ten times the measured 4 eV if occurring via Boltzmann ambipolar expansion. The hot tail electrons of the non-Maxwellian electron distribution affect the formation and the potential drop of the double layer region. The mechanism behind this has been explored via several non-invasive plasma diagnostics tools. The OES measured electron temperatures and densities are also cross-checked with Atomic Data and Analysis Structure (ADAS) and a millimeter wave interferometer respectively. The IEDF is measured by a four-grid RPA and also cross-checked with argon 668 nm Laser Induced Fluorescence (LIF). An emissive probe has been used to measure the plasma potential.

Radio Frequency Magneto-Optical Trapping of CaF with High Density.

PubMed

Anderegg, Loïc; Augenbraun, Benjamin L; Chae, Eunmi; Hemmerling, Boerge; Hutzler, Nicholas R; Ravi, Aakash; Collopy, Alejandra; Ye, Jun; Ketterle, Wolfgang; Doyle, John M

2017-09-08

We demonstrate significantly improved magneto-optical trapping of molecules using a very slow cryogenic beam source and either rf modulated or dc magnetic fields. The rf magneto-optical trap (MOT) confines 1.0(3)×10^{5} CaF molecules at a density of 7(3)×10^{6}  cm^{-3}, which is an order of magnitude greater than previous molecular MOTs. Near Doppler-limited temperatures of 340(20)  μK are attained. The achieved density enables future work to directly load optical tweezers and create optical arrays for quantum simulation.

Dust Acoustic Solitary Waves in Dusty Plasma with Trapped Electrons Having Different Temperature Nonthermal Ions

NASA Astrophysics Data System (ADS)

Deka, Manoj Kr.

2016-12-01

In this report, a detailed investigation on the study of dust acoustics solitary waves solution with negatively dust charge fluctuation in dusty plasma corresponding to lower and higher temperature nonthermal ions with trapped electrons is presented. We consider temporal variation of dust charge as a source of dissipation term to derive the lower order modified Kadomtsev-Petviashvili equation by using the reductive perturbation technique. Solitary wave solution is obtained with the help of sech method in presence of trapped electrons and low (and high) temperature nonthermal ions. Both nonthermality of ions and trapped state of the electrons are found to have an imperative control on the nonlinear coefficient, dissipative coefficient as well as height of the wave potential.

ION SOURCE

DOEpatents

Leland, W.T.

1960-01-01

The ion source described essentially eliminater the problem of deposits of nonconducting materials forming on parts of the ion source by certain corrosive gases. This problem is met by removing both filament and trap from the ion chamber, spacing them apart and outside the chamber end walls, placing a focusing cylinder about the filament tip to form a thin collimated electron stream, aligning the cylinder, slits in the walls, and trap so that the electron stream does not bombard any part in the source, and heating the trap, which is bombarded by electrons, to a temperature hotter than that in the ion chamber, so that the tendency to build up a deposit caused by electron bombardment is offset by the extra heating supplied only to the trap.

A temperature dependent study on charge dynamics in organic molecular device: Effect of shallow traps on space charge limited behavior

NASA Astrophysics Data System (ADS)

Mukherjee, A. K.; Kavala, A. K.

2014-04-01

Shallow traps play a significant role in influencing charge dynamics through organic molecular thin films, such as pentacene. Sandwich cells of pentacene capped by gold electrodes are an excellent specimen to study the nature of underlying charge dynamics. In this paper, self-consistent numerical simulation of I-V characteristics is performed at various temperatures. The results have revealed negative value of Poole Frenkel coefficient. The location of trap energy level is found to be located at 0.24 eV above the highest occupied molecular orbit (HOMO) level of pentacene. Other physical parameters related to trap levels, such as density of states due to traps and effective carrier density due to traps, have also been estimated in this study.

Modelling radiation damage to ESA's Gaia satellite CCDs

NASA Astrophysics Data System (ADS)

Seabroke, George; Holland, Andrew; Cropper, Mark

2008-07-01

The Gaia satellite is a high-precision astrometry, photometry and spectroscopic ESA cornerstone mission, currently scheduled for launch in late 2011. Its primary science drivers are the composition, formation and evolution of the Galaxy. Gaia will not achieve its scientific requirements without detailed calibration and correction for radiation damage. Microscopic models of Gaia's CCDs are being developed to simulate the effect of radiation damage, charge trapping, which causes charge transfer inefficiency. The key to calculating the probability of a photoelectron being captured by a trap is the 3D electron density within each CCD pixel. However, this has not been physically modelled for Gaia CCD pixels. In this paper, the first of a series, we motivate the need for such specialised 3D device modelling and outline how its future results will fit into Gaia's overall radiation calibration strategy.

Analysis of high field effects on the steady-state current-voltage response of semi-insulating 4H-SiC for photoconductive switch applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tiskumara, R.; Joshi, R. P., E-mail: ravi.joshi@ttu.edu; Mauch, D.

A model-based analysis of the steady-state, current-voltage response of semi-insulating 4H-SiC is carried out to probe the internal mechanisms, focusing on electric field driven effects. Relevant physical processes, such as multiple defects, repulsive potential barriers to electron trapping, band-to-trap impact ionization, and field-dependent detrapping, are comprehensively included. Results of our model match the available experimental data fairly well over orders of magnitude variation in the current density. A number of important parameters are also extracted in the process through comparisons with available data. Finally, based on our analysis, the possible presence of holes in the samples can be discounted upmore » to applied fields as high as ∼275 kV/cm.« less

Radiation dose from reentrant electrons

NASA Technical Reports Server (NTRS)

Badhwar, G. D.; Watts, J.; Cleghorn, T. E.

2001-01-01

In estimating the crew exposures during an extra vehicular activity (EVA), the contribution of reentrant electrons has always been neglected. Although the flux of these electrons is small compared to the flux of trapped electrons, their energy spectrum extends to several GeV compared to about 7 MeV for trapped electrons. This is also true of splash electrons. Using the measured reentrant electron energy spectra, it is shown that the dose contribution of these electrons to the blood forming organs (BFO) is more that 10 times greater than that from the trapped electrons. The calculations also show that the dose-depth response is a very slowly changing function of depth, and thus adding reasonable amounts of additional shielding would not significantly lower the dose to BFO. Published by Elsevier Science Ltd.

Electrical Characterization of Semiconductor Materials and Devices

NASA Astrophysics Data System (ADS)

Deen, M.; Pascal, Fabien

Semiconductor materials and devices continue to occupy a preeminent technological position due to their importance when building integrated electronic systems used in a wide range of applications from computers, cell-phones, personal digital assistants, digital cameras and electronic entertainment systems, to electronic instrumentation for medical diagnositics and environmental monitoring. Key ingredients of this technological dominance have been the rapid advances made in the quality and processing of materials - semiconductors, conductors and dielectrics - which have given metal oxide semiconductor device technology its important characteristics of negligible standby power dissipation, good input-output isolation, surface potential control and reliable operation. However, when assessing material quality and device reliability, it is important to have fast, nondestructive, accurate and easy-to-use electrical characterization techniques available, so that important parameters such as carrier doping density, type and mobility of carriers, interface quality, oxide trap density, semiconductor bulk defect density, contact and other parasitic resistances and oxide electrical integrity can be determined. This chapter describes some of the more widely employed and popular techniques that are used to determine these important parameters. The techniques presented in this chapter range in both complexity and test structure requirements from simple current-voltage measurements to more sophisticated low-frequency noise, charge pumping and deep-level transient spectroscopy techniques.

A cooler Penning trap for the TITAN mass measurement facility

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chowdhury, U.; Kootte, B.; Good, M.

The TITAN facility at TRIUMF makes use of highly charged ions, charge-bred in an electron beam ion trap, to carry out accurate mass measurements on radioactive isotopes. We report on our progress to develop a cooler Penning trap, CPET, which aims at reducing the energy spread of the ions to ≈ 1 eV/charge prior to injection into the mass measurement trap. In off-line mode, we can now trap electron plasmas for minutes, and we observe the damping of the m = 1 diocotron plasma mode within ≈ 2 s.

Polaronic and ionic conduction in NaMnO2: influence of native point defects

NASA Astrophysics Data System (ADS)

Zhu, Zhen; Peelaers, Hartwin; van de Walle, Chris G.

Layered NaMnO2 has promising applications as a cathode material for sodium ion batteries. We will discuss strategies to improve the electrical performance of NaMnO2, including how to optimize the conditions of synthesis and how impurity doping affects the performance. Using hybrid density functional theory, we explored the structural, electronic, and defect properties of bulk NaMnO2. It is antiferromagnetic in the ground state with a band gap of 3.75 eV. Small hole and electron polarons can form in the bulk either through self-trapping or adjacent to point defects. We find that both Na and Mn vacancies are shallow acceptors with the induced holes trapped as small polarons, while O vacancies are deep defect centers. Cation antisites, especially MnNa, are found to have low formation energies. As a result, we expect that MnNa exists in as-grown NaMnO2 in moderate concentrations, rather than forming only at a later stage of the charging process, at which point it causes undesirable structural phase transitions. Both electronic conduction, via polaron hopping, and ionic conduction, through VNa migration, are significantly affected by the presence of point defects. This work was supported by DOE.

Local Electronic Structure Changes in Polycrystalline CdTe with CdCl 2 Treatment and Air Exposure

DOE PAGES

Berg, Morgann; Kephart, Jason M.; Munshi, Amit; ...

2018-03-12

Postdeposition CdCl 2 treatment of polycrystalline CdTe is known to increase the photovoltaic device efficiency. However, the precise chemical, structural, and electronic changes that underpin this improvement are still debated. In this work, spectroscopic photoemission electron microscopy was used to spatially map the vacuum level and ionization energy of CdTe films, enabling the identification of electronic structure variations between grains and grain boundaries (GBs). In vacuo preparation and inert transfer of oxide-free CdTe surfaces isolated the separate effects of CdCl 2 treatment and ambient oxygen exposure. Qualitatively, grain boundaries displayed lower work function and downward band bending relative to grainmore » interiors, but only after air exposure of CdCl 2-treated CdTe. Analysis of numerous space charge regions at grain boundaries showed an average depletion width of 290 nm and an average band bending magnitude of 70 meV, corresponding to a GB trap density of 10 11 cm –2 and a net carrier density of 10 15 cm –3. Finally, these results suggest that both CdCl 2 treatment and oxygen exposure may be independently tuned to enhance the CdTe photovoltaic performance by engineering the interface and bulk electronic structure.« less

Local Electronic Structure Changes in Polycrystalline CdTe with CdCl 2 Treatment and Air Exposure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Berg, Morgann; Kephart, Jason M.; Munshi, Amit

Postdeposition CdCl 2 treatment of polycrystalline CdTe is known to increase the photovoltaic device efficiency. However, the precise chemical, structural, and electronic changes that underpin this improvement are still debated. In this work, spectroscopic photoemission electron microscopy was used to spatially map the vacuum level and ionization energy of CdTe films, enabling the identification of electronic structure variations between grains and grain boundaries (GBs). In vacuo preparation and inert transfer of oxide-free CdTe surfaces isolated the separate effects of CdCl 2 treatment and ambient oxygen exposure. Qualitatively, grain boundaries displayed lower work function and downward band bending relative to grainmore » interiors, but only after air exposure of CdCl 2-treated CdTe. Analysis of numerous space charge regions at grain boundaries showed an average depletion width of 290 nm and an average band bending magnitude of 70 meV, corresponding to a GB trap density of 10 11 cm –2 and a net carrier density of 10 15 cm –3. Finally, these results suggest that both CdCl 2 treatment and oxygen exposure may be independently tuned to enhance the CdTe photovoltaic performance by engineering the interface and bulk electronic structure.« less

Nonstoichiometric Solution-Processed BaTiO₃ Film for Gate Insulator Applications.

PubMed

Lau, Joyce; Kim, Sangsub; Kim, Hyunki; Koo, Kwangjun; Lee, Jaeseob; Kim, Sangsoo; Choi, Byoungdeog

2018-09-01

Solution processed barium titanate (BTO) was used to fabricate an Al/BaTiO3/p-Si metal-insulator-semiconductor (MIS) structure, which was used as a gate insulator. Changes in the electrical characteristics of the film were investigated as a function of the film thickness and post deposition annealing conditions. Our results showed that a thickness of 5 layers and an annealing temperature of 650 °C produced the highest electrical performance. BaxTi1-xO3 was altered at x = 0.10, 0.30, 0.50, 0.70, 0.90, and 1.0 to investigate changes in the electrical properties as a function of composition. The highest dielectric constant of 87 was obtained for x = 0.10, while the leakage current density was suppressed as Ba content increased. The lowest leakage current density was 1.34×10-10 A/cm2, which was observed at x = 0.90. The leakage current was related to the resistivity of the film, the interface states, and grain densification. Space charge limited current (SCLC) was the dominant leakage mechanism in BTO films based on leakage current analysis. Although a Ba content of x = 0.90 had the highest trap density, the traps were mainly composed of Ti-vacancies, which acted as strong electron traps and affected the film resistivity. A secondary phase, Ba2TiO4, which was observed in cases of excess Ba, acted as a grain refiner and provided faster densification of the film during the thermal process. The absence of a secondary phase in BaO (x = 1.0) led to the formation of many interface states and degradation in the electrical properties. Overall, the insulator properties of BTO were improved when the composition ratio was x = 0.90.