Printed Electronics

NASA Technical Reports Server (NTRS)

Korkut, Sibel (Inventor); Chiang, Katherine S. (Inventor); Crain, John M. (Inventor); Aksay, Ilhan A. (Inventor); Lettow, John S. (Inventor); Chen, Chuan-Hua (Inventor); Prud'Homme, Robert K. (Inventor)

2018-01-01

Printed electronic device comprising a substrate onto at least one surface of which has been applied a layer of an electrically conductive ink comprising functionalized graphene sheets and at least one binder. A method of preparing printed electronic devices is further disclosed.

Printed Electronics

NASA Technical Reports Server (NTRS)

Aksay, Ilhan A. (Inventor); Chen, Chuan-Hua (Inventor); Lettow, John S. (Inventor); Chiang, Katherine S. (Inventor); Prud'Homme, Robert K. (Inventor); Crain, John M. (Inventor); Korkut, Sibel (Inventor)

2015-01-01

Printed electronic device comprising a substrate onto at least one surface of which has been applied a layer of an electrically conductive ink comprising functionalized graphene sheets and at least one binder. A method of preparing printed electronic devices is further disclosed.

Printed Electronics

NASA Technical Reports Server (NTRS)

Aksay, Ilhan A. (Inventor); Crain, John M. (Inventor); Chiang, Katherine S. (Inventor); Prud'Homme, Robert K. (Inventor); Lettow, John S. (Inventor); Korkut, Sibel A. (Inventor); Chen, Chuan-Hua (Inventor)

2014-01-01

Printed electronic device comprising a substrate onto at least one surface of which has been applied a layer of an electrically conductive ink comprising functionalized graphene sheets and at least one binder. A method of preparing printed electronic devices is further disclosed.

Printed electronics

NASA Technical Reports Server (NTRS)

Lettow, John S. (Inventor); Prud'Homme, Robert K. (Inventor); Crain, John M. (Inventor); Aksay, Ilhan A. (Inventor); Korkut, Sibel A. (Inventor); Chiang, Katherine S. (Inventor); Chen, Chuan-hua (Inventor)

2012-01-01

Printed electronic device comprising a substrate onto at least one surface of which has been applied a layer of an electrically conductive ink comprising functionalized graphene sheets and at least one binder. A method of preparing printed electronic devices is further disclosed.

Metal–Organic Frameworks as Active Materials in Electronic Sensor Devices

PubMed Central

Campbell, Michael G.; Dincă, Mircea

2017-01-01

In the past decade, advances in electrically conductive metal–organic frameworks (MOFs) and MOF-based electronic devices have created new opportunities for the development of next-generation sensors. Here we review this rapidly-growing field, with a focus on the different types of device configurations that have allowed for the use of MOFs as active components of electronic sensor devices. PMID:28498308

How to Make Reliable, Washable, and Wearable Textronic Devices

PubMed Central

Tao, Xuyuan; Koncar, Vladan; Huang, Tzu-Hao; Shen, Chien-Lung; Ko, Ya-Chi; Jou, Gwo-Tsuen

2017-01-01

In this paper, the washability of wearable textronic (textile-electronic) devices has been studied. Two different approaches aiming at designing, producing, and testing robust washable and reliable smart textile systems are presented. The common point of the two approaches is the use of flexible conductive PCB in order to interface the miniaturized rigid (traditional) electronic devices to conductive threads and tracks within the textile flexible fabric and to connect them to antenna, textile electrodes, sensors, actuators, etc. The first approach consists in the use of TPU films (thermoplastic polyurethane) that are deposited by the press under controlled temperature and pressure parameters in order to protect the conductive thread and electrical contacts. The washability of conductive threads and contact resistances between flexible PCB and conductive threads are tested. The second approach is focused on the protection of the whole system—composed of a rigid electronic device, flexible PCB, and textile substrate—by a barrier made of latex. Three types of prototypes were realized and washed. Their reliabilities are studied. PMID:28338607

Atomic layer deposition of Al{sub 2}O{sub 3} for single electron transistors utilizing Pt oxidation and reduction

DOE Office of Scientific and Technical Information (OSTI.GOV)

McConnell, Michael S., E-mail: mmcconn5@nd.edu; Schneider, Louisa C.; Karbasian, Golnaz

This work describes the fabrication of single electron transistors using electron beam lithography and atomic layer deposition to form nanoscale tunnel transparent junctions of alumina (Al{sub 2}O{sub 3}) on platinum nanowires using either water or ozone as the oxygen precursor and trimethylaluminum as the aluminum precursor. Using room temperature, low frequency conductance measurements between the source and drain, it was found that devices fabricated using water had higher conductance than devices fabricated with ozone. Subsequent annealing caused both water- and ozone-based devices to increase in conductance by more than 2 orders of magnitude. Furthermore, comparison of devices at low temperaturesmore » (∼4 K) showed that annealed devices displayed much closer to the ideal behavior (i.e., constant differential conductance) outside of the Coulomb blockade region and that untreated devices showed nonlinear behavior outside of the Coulomb blockade region (i.e., an increase in differential conductance with source-drain voltage bias). Transmission electron microscopy cross-sectional images showed that annealing did not significantly change device geometry, but energy dispersive x-ray spectroscopy showed an unusually large amount of oxygen in the bottom platinum layer. This suggests that the atomic layer deposition process results in the formation of a thin platinum surface oxide, which either decomposes or is reduced during the anneal step, resulting in a tunnel barrier without the in-series native oxide contribution. Furthermore, the difference between ozone- and water-based devices suggests that ozone promotes atomic layer deposition nucleation by oxidizing the surface but that water relies on physisorption of the precursors. To test this theory, devices were exposed to forming gas at room temperature, which also reduces platinum oxide, and a decrease in resistance was observed, as expected.« less

Electronic-Reconstruction-Enhanced Tunneling Conductance at Terrace Edges of Ultrathin Oxide Films.

PubMed

Wang, Lingfei; Kim, Rokyeon; Kim, Yoonkoo; Kim, Choong H; Hwang, Sangwoon; Cho, Myung Rae; Shin, Yeong Jae; Das, Saikat; Kim, Jeong Rae; Kalinin, Sergei V; Kim, Miyoung; Yang, Sang Mo; Noh, Tae Won

2017-11-01

Quantum mechanical tunneling of electrons across ultrathin insulating oxide barriers has been studied extensively for decades due to its great potential in electronic-device applications. In the few-nanometers-thick epitaxial oxide films, atomic-scale structural imperfections, such as the ubiquitously existed one-unit-cell-high terrace edges, can dramatically affect the tunneling probability and device performance. However, the underlying physics has not been investigated adequately. Here, taking ultrathin BaTiO 3 films as a model system, an intrinsic tunneling-conductance enhancement is reported near the terrace edges. Scanning-probe-microscopy results demonstrate the existence of highly conductive regions (tens of nanometers wide) near the terrace edges. First-principles calculations suggest that the terrace-edge geometry can trigger an electronic reconstruction, which reduces the effective tunneling barrier width locally. Furthermore, such tunneling-conductance enhancement can be discovered in other transition metal oxides and controlled by surface-termination engineering. The controllable electronic reconstruction can facilitate the implementation of oxide electronic devices and discovery of exotic low-dimensional quantum phases. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Stretchable, Twisted Conductive Microtubules for Wearable Computing, Robotics, Electronics, and Healthcare.

PubMed

Do, Thanh Nho; Visell, Yon

2017-05-11

Stretchable and flexible multifunctional electronic components, including sensors and actuators, have received increasing attention in robotics, electronics, wearable, and healthcare applications. Despite advances, it has remained challenging to design analogs of many electronic components to be highly stretchable, to be efficient to fabricate, and to provide control over electronic performance. Here, we describe highly elastic sensors and interconnects formed from thin, twisted conductive microtubules. These devices consist of twisted assemblies of thin, highly stretchable (>400%) elastomer tubules filled with liquid conductor (eutectic gallium indium, EGaIn), and fabricated using a simple roller coating process. As we demonstrate, these devices can operate as multimodal sensors for strain, rotation, contact force, or contact location. We also show that, through twisting, it is possible to control their mechanical performance and electronic sensitivity. In extensive experiments, we have evaluated the capabilities of these devices, and have prototyped an array of applications in several domains of stretchable and wearable electronics. These devices provide a novel, low cost solution for high performance stretchable electronics with broad applications in industry, healthcare, and consumer electronics, to emerging product categories of high potential economic and societal significance.

Electronic structure of strongly reduced (1 ‾ 1 1) surface of monoclinic HfO2

NASA Astrophysics Data System (ADS)

Cheng, YingXing; Zhu, Linggang; Ying, Yile; Zhou, Jian; Sun, Zhimei

2018-07-01

Material surface is playing an increasingly important role in electronic devices as their size down to nanoscale. Here, by first-principles calculations we studied the surface oxygen-vacancies (Vos) induced electronic-structure variation of HfO2 , in order to explore its potential applications in surface-controlled electronic devices. Firstly, it is found that single Vo tends to segregate onto the surface and attracts each other as they form pairs, making the formation of vacancies-contained functional surface possible. Then extensive Vo-chains whose formation/rupture can represent the high/low conductivity state are constructed. The electronic states induced by the Vos remain localized in the band-gap region for most of the Vo-chains studied here. A transition to a metallic conductance is found in metastable Vo-chain with formation energy increased by 0.25 eV per Vo. Moreover, we highlight the significance of the Hubbard U correction for density functional theory when studying the electronic-structure based conductance in the oxides. By comprehensive calculations, we find a conductivity-stability dilemma of the Vo-chains, providing guideline for understanding and designing the electronic devices based on HfO2 surface.

Organic electronic devices with multiple solution-processed layers

DOEpatents

Forrest, Stephen R.; Lassiter, Brian E.; Zimmerman, Jeramy D.

2015-08-04

A method of fabricating a tandem organic photosensitive device involves depositing a first layer of an organic electron donor type material film by solution-processing of the organic electron donor type material dissolved in a first solvent; depositing a first layer of an organic electron acceptor type material over the first layer of the organic electron donor type material film by a dry deposition process; depositing a conductive layer over the interim stack by a dry deposition process; depositing a second layer of the organic electron donor type material over the conductive layer by solution-processing of the organic electron donor type material dissolved in a second solvent, wherein the organic electron acceptor type material and the conductive layer are insoluble in the second solvent; depositing a second layer of an organic electron acceptor type material over the second layer of the organic electron donor type material film by a dry deposition process, resulting in a stack.

A reversible single-molecule switch based on activated antiaromaticity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yin, Xiaodong; Zang, Yaping; Zhu, Liangliang

Single-molecule electronic devices provide researchers with an unprecedented ability to relate novel physical phenomena to molecular chemical structures. Typically, conjugated aromatic molecular backbones are relied upon to create electronic devices, where the aromaticity of the building blocks is used to enhance conductivity. We capitalize on the classical physical organic chemistry concept of Hückel antiaromaticity by demonstrating a single-molecule switch that exhibits low conductance in the neutral state and, upon electrochemical oxidation, reversibly switches to an antiaromatic high-conducting structure. We form single-molecule devices using the scanning tunneling microscope–based break-junction technique and observe an on/off ratio of ~70 for a thiophenylidene derivativemore » that switches to an antiaromatic state with 6-4-6-p electrons. Through supporting nuclear magnetic resonance measurements, we show that the doubly oxidized core has antiaromatic character and we use density functional theory calculations to rationalize the origin of the high-conductance state for the oxidized single-molecule junction. Together, our work demonstrates how the concept of antiaromaticity can be exploited to create single-molecule devices that are highly conducting.« less

A reversible single-molecule switch based on activated antiaromaticity

DOE PAGES

Yin, Xiaodong; Zang, Yaping; Zhu, Liangliang; ...

2017-10-27

Single-molecule electronic devices provide researchers with an unprecedented ability to relate novel physical phenomena to molecular chemical structures. Typically, conjugated aromatic molecular backbones are relied upon to create electronic devices, where the aromaticity of the building blocks is used to enhance conductivity. We capitalize on the classical physical organic chemistry concept of Hückel antiaromaticity by demonstrating a single-molecule switch that exhibits low conductance in the neutral state and, upon electrochemical oxidation, reversibly switches to an antiaromatic high-conducting structure. We form single-molecule devices using the scanning tunneling microscope–based break-junction technique and observe an on/off ratio of ~70 for a thiophenylidene derivativemore » that switches to an antiaromatic state with 6-4-6-p electrons. Through supporting nuclear magnetic resonance measurements, we show that the doubly oxidized core has antiaromatic character and we use density functional theory calculations to rationalize the origin of the high-conductance state for the oxidized single-molecule junction. Together, our work demonstrates how the concept of antiaromaticity can be exploited to create single-molecule devices that are highly conducting.« less

Advanced Graphene-Based Binder-Free Electrodes for High-Performance Energy Storage.

PubMed

Ji, Junyi; Li, Yang; Peng, Wenchao; Zhang, Guoliang; Zhang, Fengbao; Fan, Xiaobin

2015-09-23

The increasing demand for energy has triggered tremendous research effort for the development of high-performance and durable energy-storage devices. Advanced graphene-based electrodes with high electrical conductivity and ion accessibility can exhibit superior electrochemical performance in energy-storage devices. Among them, binder-free configurations can enhance the electron conductivity of the electrode, which leads to a higher capacity by avoiding the addition of non-conductive and inactive binders. Graphene, a 2D material, can be fabricated into a porous and flexible structure with an interconnected conductive network. Such a conductive structure is favorable for both electron and ion transport to the entire electrode surface. In this review, the main processes used to prepare binder-free graphene-based hybrids with high porosity and well-designed electron conductive networks are summarized. Then, the applications of free-standing binder-free graphene-based electrodes in energy-storage devices are discussed. Future research aspects with regard to overcoming the technological bottlenecks are also proposed. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Next-generation pacemakers: from small devices to biological pacemakers.

PubMed

Cingolani, Eugenio; Goldhaber, Joshua I; Marbán, Eduardo

2018-03-01

Electrogenesis in the heart begins in the sinoatrial node and proceeds down the conduction system to originate the heartbeat. Conduction system disorders lead to slow heart rates that are insufficient to support the circulation, necessitating implantation of electronic pacemakers. The typical electronic pacemaker consists of a subcutaneous generator and battery module attached to one or more endocardial leads. New leadless pacemakers can be implanted directly into the right ventricular apex, providing single-chamber pacing without a subcutaneous generator. Modern pacemakers are generally reliable, and their programmability provides options for different pacing modes tailored to specific clinical needs. Advances in device technology will probably include alternative energy sources and dual-chamber leadless pacing in the not-too-distant future. Although effective, current electronic devices have limitations related to lead or generator malfunction, lack of autonomic responsiveness, undesirable interactions with strong magnetic fields, and device-related infections. Biological pacemakers, generated by somatic gene transfer, cell fusion, or cell transplantation, provide an alternative to electronic devices. Somatic reprogramming strategies, which involve transfer of genes encoding transcription factors to transform working myocardium into a surrogate sinoatrial node, are furthest along in the translational pipeline. Even as electronic pacemakers become smaller and less invasive, biological pacemakers might expand the therapeutic armamentarium for conduction system disorders.

Thin film electronic devices with conductive and transparent gas and moisture permeation barriers

DOEpatents

Simpson, Lin Jay

2015-07-28

Thin film electronic devices (or stacks integrated with a substrate) that include a permeation barrier formed of a thin layer of metal that provides a light transmitting and electrically conductive layer, wherein the electrical conductive layer is formed on a surface of the substrate or device layer such as a transparent conducting material layer with pin holes or defects caused by manufacturing and the thin layer of metal is deposited on the conductive layer and formed from a self-healing metal that forms self-terminating oxides. A permeation plug or block is formed in or adjacent to the thin film of metal at or proximate to the pin holes to block further permeation of contaminants through the pin holes.

High energy density redox flow device

DOEpatents

Chiang, Yet-Ming; Carter, W. Craig; Ho, Bryan Y; Duduta, Mihai; Limthongkul, Pimpa

2014-05-13

Redox flow devices are described in which at least one of the positive electrode or negative electrode-active materials is a semi-solid or is a condensed ion-storing electroactive material, and in which at least one of the electrode-active materials is transported to and from an assembly at which the electrochemical reaction occurs, producing electrical energy. The electronic conductivity of the semi-solid is increased by the addition of conductive particles to suspensions and/or via the surface modification of the solid in semi-solids (e.g., by coating the solid with a more electron conductive coating material to increase the power of the device). High energy density and high power redox flow devices are disclosed. The redox flow devices described herein can also include one or more inventive design features. In addition, inventive chemistries for use in redox flow devices are also described.

Direct writing of half-meter long CNT based fiber for flexible electronics.

PubMed

Huang, Sihan; Zhao, Chunsong; Pan, Wei; Cui, Yi; Wu, Hui

2015-03-11

Rapid construction of flexible circuits has attracted increasing attention according to its important applications in future smart electronic devices. Herein, we introduce a convenient and efficient "writing" approach to fabricate and assemble ultralong functional fibers as fundamental building blocks for flexible electronic devices. We demonstrated that, by a simple hand-writing process, carbon nanotubes (CNTs) can be aligned inside a continuous and uniform polymer fiber with length of more than 50 cm and diameters ranging from 300 nm to several micrometers. The as-prepared continuous fibers exhibit high electrical conductivity as well as superior mechanical flexibility (no obvious conductance increase after 1000 bending cycles to 4 mm diameter). Such functional fibers can be easily configured into designed patterns with high precision according to the easy "writing" process. The easy construction and assembly of functional fiber shown here holds potential for convenient and scalable fabrication of flexible circuits in future smart devices like wearable electronics and three-dimensional (3D) electronic devices.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chiang, Yet-Ming; Carter, Craig W.; Ho, Bryan Y.

Redox flow devices are described in which at least one of the positive electrode or negative electrode-active materials is a semi-solid or is a condensed ion-storing electroactive material, and in which at least one of the electrode-active materials is transported to and from an assembly at which the electrochemical reaction occurs, producing electrical energy. The electronic conductivity of the semi-solid is increased by the addition of conductive particles to suspensions and/or via the surface modification of the solid in semi-solids (e.g., by coating the solid with a more electron conductive coating material to increase the power of the device). Highmore » energy density and high power redox flow devices are disclosed. The redox flow devices described herein can also include one or more inventive design features. In addition, inventive chemistries for use in redox flow devices are also described.« less

Hybrid 3D Printing of Soft Electronics.

PubMed

Valentine, Alexander D; Busbee, Travis A; Boley, John William; Raney, Jordan R; Chortos, Alex; Kotikian, Arda; Berrigan, John Daniel; Durstock, Michael F; Lewis, Jennifer A

2017-10-01

Hybrid 3D printing is a new method for producing soft electronics that combines direct ink writing of conductive and dielectric elastomeric materials with automated pick-and-place of surface mount electronic components within an integrated additive manufacturing platform. Using this approach, insulating matrix and conductive electrode inks are directly printed in specific layouts. Passive and active electrical components are then integrated to produce the desired electronic circuitry by using an empty nozzle (in vacuum-on mode) to pick up individual components, place them onto the substrate, and then deposit them (in vacuum-off mode) in the desired location. The components are then interconnected via printed conductive traces to yield soft electronic devices that may find potential application in wearable electronics, soft robotics, and biomedical devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Methods and devices for measuring orbital angular momentum states of electrons

DOE Office of Scientific and Technical Information (OSTI.GOV)

McMorran, Benjamin J.; Harvey, Tyler R.

A device for measuring electron orbital angular momentum states in an electron microscope includes the following components aligned sequentially in the following order along an electron beam axis: a phase unwrapper (U) that is a first electrostatic refractive optical element comprising an electrode and a conductive plate, where the electrode is aligned perpendicular to the conductive plate; a first electron lens system (L1); a phase corrector (C) that is a second electrostatic refractive optical element comprising an array of electrodes with alternating electrostatic bias; and a second electron lens system (L2). The phase unwrapper may be a needle electrode ormore » knife edge electrode.« less

The Pattern of Electronic Game Use and Related Bodily Discomfort in Hong Kong Primary School Children

ERIC Educational Resources Information Center

Lui, Donald P. Y.; Szeto, Grace P. Y.; Jones, Alice Y. M.

2011-01-01

The present study examined the usage pattern of electronic game devices among primary school children in Hong Kong. Commonly used types of games devices were grouped into three main categories: large-screen/TV-based games, small handheld game devices and active game devices. A survey was conducted among 476 students in a local primary school, with…

Device considerations for development of conductance-based biosensors

PubMed Central

Lee, Kangho; Nair, Pradeep R.; Scott, Adina; Alam, Muhammad A.; Janes, David B.

2009-01-01

Design and fabrication of electronic biosensors based on field-effect-transistor (FET) devices require understanding of interactions between semiconductor surfaces and organic biomolecules. From this perspective, we review practical considerations for electronic biosensors with emphasis on molecular passivation effects on FET device characteristics upon immobilization of organic molecules and an electrostatic model for FET-based biosensors. PMID:24753627

Sketched oxide single-electron transistor

NASA Astrophysics Data System (ADS)

Cheng, Guanglei; Siles, Pablo F.; Bi, Feng; Cen, Cheng; Bogorin, Daniela F.; Bark, Chung Wung; Folkman, Chad M.; Park, Jae-Wan; Eom, Chang-Beom; Medeiros-Ribeiro, Gilberto; Levy, Jeremy

2011-06-01

Devices that confine and process single electrons represent an important scaling limit of electronics. Such devices have been realized in a variety of materials and exhibit remarkable electronic, optical and spintronic properties. Here, we use an atomic force microscope tip to reversibly `sketch' single-electron transistors by controlling a metal-insulator transition at the interface of two oxides. In these devices, single electrons tunnel resonantly between source and drain electrodes through a conducting oxide island with a diameter of ~1.5 nm. We demonstrate control over the number of electrons on the island using bottom- and side-gate electrodes, and observe hysteresis in electron occupation that is attributed to ferroelectricity within the oxide heterostructure. These single-electron devices may find use as ultradense non-volatile memories, nanoscale hybrid piezoelectric and charge sensors, as well as building blocks in quantum information processing and simulation platforms.

Tunable Electron-Electron Interactions in LaAlO 3 / SrTiO 3 Nanostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cheng, Guanglei; Tomczyk, Michelle; Tacla, Alexandre B.

The interface between the two complex oxides LaAlO 3 and SrTiO 3 has remarkable properties that can be locally reconfigured between conducting and insulating states using a conductive atomic force microscope. Prior investigations of “sketched” quantum dot devices revealed a phase in which electrons form pairs, implying a strongly attractive electron-electron interaction. Here, we show that these devices with strong electron-electron interactions can exhibit a gate-tunable transition from a pair-tunneling regime to a single-electron (Andreev bound state) tunneling regime where the interactions become repulsive. The electron-electron interaction sign change is associated with a Lifshitz transition where the d xz andmore » d yz bands start to become occupied. This electronically tunable electron-electron interaction, combined with the nanoscale reconfigurability of this system, provides an interesting starting point towards solid-state quantum simulation.« less

Tunable Electron-Electron Interactions in LaAlO 3 / SrTiO 3 Nanostructures

DOE PAGES

Cheng, Guanglei; Tomczyk, Michelle; Tacla, Alexandre B.; ...

2016-12-01

The interface between the two complex oxides LaAlO 3 and SrTiO 3 has remarkable properties that can be locally reconfigured between conducting and insulating states using a conductive atomic force microscope. Prior investigations of “sketched” quantum dot devices revealed a phase in which electrons form pairs, implying a strongly attractive electron-electron interaction. Here, we show that these devices with strong electron-electron interactions can exhibit a gate-tunable transition from a pair-tunneling regime to a single-electron (Andreev bound state) tunneling regime where the interactions become repulsive. The electron-electron interaction sign change is associated with a Lifshitz transition where the d xz andmore » d yz bands start to become occupied. This electronically tunable electron-electron interaction, combined with the nanoscale reconfigurability of this system, provides an interesting starting point towards solid-state quantum simulation.« less

OPTOELECTRONICS, FIBER OPTICS, AND OTHER ASPECTS OF QUANTUM ELECTRONICS: Nonlinear optical devices: basic elements of a future optical digital computer?

NASA Astrophysics Data System (ADS)

Fischer, R.; Müller, R.

1989-08-01

It is shown that nonlinear optical devices are the most promising elements for an optical digital supercomputer. The basic characteristics of various developed nonlinear elements are presented, including bistable Fabry-Perot etalons, interference filters, self-electrooptic effect devices, quantum-well devices utilizing transitions between the lowest electron states in the conduction band of GaAs, etc.

Observation of conducting filament growth in nanoscale resistive memories

NASA Astrophysics Data System (ADS)

Yang, Yuchao; Gao, Peng; Gaba, Siddharth; Chang, Ting; Pan, Xiaoqing; Lu, Wei

2012-03-01

Nanoscale resistive switching devices, sometimes termed memristors, have recently generated significant interest for memory, logic and neuromorphic applications. Resistive switching effects in dielectric-based devices are normally assumed to be caused by conducting filament formation across the electrodes, but the nature of the filaments and their growth dynamics remain controversial. Here we report direct transmission electron microscopy imaging, and structural and compositional analysis of the nanoscale conducting filaments. Through systematic ex-situ and in-situ transmission electron microscopy studies on devices under different programming conditions, we found that the filament growth can be dominated by cation transport in the dielectric film. Unexpectedly, two different growth modes were observed for the first time in materials with different microstructures. Regardless of the growth direction, the narrowest region of the filament was found to be near the dielectric/inert-electrode interface in these devices, suggesting that this region deserves particular attention for continued device optimization.

Tissue-electronics interfaces: from implantable devices to engineered tissues

NASA Astrophysics Data System (ADS)

Feiner, Ron; Dvir, Tal

2018-01-01

Biomedical electronic devices are interfaced with the human body to extract precise medical data and to interfere with tissue function by providing electrical stimuli. In this Review, we outline physiologically and pathologically relevant tissue properties and processes that are important for designing implantable electronic devices. We summarize design principles for flexible and stretchable electronics that adapt to the mechanics of soft tissues, such as those including conducting polymers, liquid metal alloys, metallic buckling and meandering architectures. We further discuss technologies for inserting devices into the body in a minimally invasive manner and for eliminating them without further intervention. Finally, we introduce the concept of integrating electronic devices with biomaterials and cells, and we envision how such technologies may lead to the development of bionic organs for regenerative medicine.

Electric microwave absorption for the study of GaAs/AlGaAs heterostructure systems

NASA Astrophysics Data System (ADS)

Zappe, Hans P.; Jantz, Wolfgang

1990-12-01

The use of magnetic-field-dependent microwave absorption as a nondestructive and contact-free means to study transport behavior in GaAs/AlGaAs devices is explored. This technique allows quick measurement of resistance, mobility, and carrier concentration in bulk substrates as well as in the two-dimensional electron gas of heterostructure quantum wells. The two- and three-dimensional conductivities may be separably evaluated, allowing detailed study of conduction in the active layer of high-electron-mobility devices. A brief theoretical foundation is provided, followed by application of the approach to examination of device structural dependencies, carrier-density conduction behavior, and the effects of etch processing on quantum-well integrity.

Power Electronics Thermal Management Research: Annual Progress Report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moreno, Gilberto

The objective for this project is to develop thermal management strategies to enable efficient and high-temperature wide-bandgap (WBG)-based power electronic systems (e.g., emerging inverter and DC-DC converter). Reliable WBG devices are capable of operating at elevated temperatures (≥ 175 °Celsius). However, packaging WBG devices within an automotive inverter and operating them at higher junction temperatures will expose other system components (e.g., capacitors and electrical boards) to temperatures that may exceed their safe operating limits. This creates challenges for thermal management and reliability. In this project, system-level thermal analyses are conducted to determine the effect of elevated device temperatures on invertermore » components. Thermal modeling work is then conducted to evaluate various thermal management strategies that will enable the use of highly efficient WBG devices with automotive power electronic systems.« less

Trap-mediated electronic transport properties of gate-tunable pentacene/MoS2 p-n heterojunction diodes

PubMed Central

Kim, Jae-Keun; Cho, Kyungjune; Kim, Tae-Young; Pak, Jinsu; Jang, Jingon; Song, Younggul; Kim, Youngrok; Choi, Barbara Yuri; Chung, Seungjun; Hong, Woong-Ki; Lee, Takhee

2016-01-01

We investigated the trap-mediated electronic transport properties of pentacene/molybdenum disulphide (MoS2) p-n heterojunction devices. We observed that the hybrid p-n heterojunctions were gate-tunable and were strongly affected by trap-assisted tunnelling through the van der Waals gap at the heterojunction interfaces between MoS2 and pentacene. The pentacene/MoS2 p-n heterojunction diodes had gate-tunable high ideality factor, which resulted from trap-mediated conduction nature of devices. From the temperature-variable current-voltage measurement, a space-charge-limited conduction and a variable range hopping conduction at a low temperature were suggested as the gate-tunable charge transport characteristics of these hybrid p-n heterojunctions. Our study provides a better understanding of the trap-mediated electronic transport properties in organic/2-dimensional material hybrid heterojunction devices. PMID:27829663

Trap-mediated electronic transport properties of gate-tunable pentacene/MoS2 p-n heterojunction diodes

NASA Astrophysics Data System (ADS)

Kim, Jae-Keun; Cho, Kyungjune; Kim, Tae-Young; Pak, Jinsu; Jang, Jingon; Song, Younggul; Kim, Youngrok; Choi, Barbara Yuri; Chung, Seungjun; Hong, Woong-Ki; Lee, Takhee

2016-11-01

We investigated the trap-mediated electronic transport properties of pentacene/molybdenum disulphide (MoS2) p-n heterojunction devices. We observed that the hybrid p-n heterojunctions were gate-tunable and were strongly affected by trap-assisted tunnelling through the van der Waals gap at the heterojunction interfaces between MoS2 and pentacene. The pentacene/MoS2 p-n heterojunction diodes had gate-tunable high ideality factor, which resulted from trap-mediated conduction nature of devices. From the temperature-variable current-voltage measurement, a space-charge-limited conduction and a variable range hopping conduction at a low temperature were suggested as the gate-tunable charge transport characteristics of these hybrid p-n heterojunctions. Our study provides a better understanding of the trap-mediated electronic transport properties in organic/2-dimensional material hybrid heterojunction devices.

Trap-mediated electronic transport properties of gate-tunable pentacene/MoS2 p-n heterojunction diodes.

PubMed

Kim, Jae-Keun; Cho, Kyungjune; Kim, Tae-Young; Pak, Jinsu; Jang, Jingon; Song, Younggul; Kim, Youngrok; Choi, Barbara Yuri; Chung, Seungjun; Hong, Woong-Ki; Lee, Takhee

2016-11-10

We investigated the trap-mediated electronic transport properties of pentacene/molybdenum disulphide (MoS 2 ) p-n heterojunction devices. We observed that the hybrid p-n heterojunctions were gate-tunable and were strongly affected by trap-assisted tunnelling through the van der Waals gap at the heterojunction interfaces between MoS 2 and pentacene. The pentacene/MoS 2 p-n heterojunction diodes had gate-tunable high ideality factor, which resulted from trap-mediated conduction nature of devices. From the temperature-variable current-voltage measurement, a space-charge-limited conduction and a variable range hopping conduction at a low temperature were suggested as the gate-tunable charge transport characteristics of these hybrid p-n heterojunctions. Our study provides a better understanding of the trap-mediated electronic transport properties in organic/2-dimensional material hybrid heterojunction devices.

Sketched Oxide Single-Electron Transistor

NASA Astrophysics Data System (ADS)

Cheng, Guanglei

2012-02-01

Devices that confine and process single electrons represent an important scaling limit of electronics. Such devices have been realized in a variety of materials and exhibit remarkable electronic, optical and spintronic properties. Here, we use an atomic force microscope tip to reversibly ``sketch'' single-electron transistors by controlling a metal-insulator transition at the interface of two oxides.ootnotetextCheng et al., Nature Nanotechnology 6, 343 (2011). In these devices, single electrons tunnel resonantly between source and drain electrodes through a conducting oxide island with a diameter of ˜1.5 nm. We demonstrate control over the number of electrons on the island using bottom- and side-gate electrodes, and observe hysteresis in electron occupation that is attributed to ferroelectricity within the oxide heterostructure. These single-electron devices may find use as ultradense non-volatile memories, nanoscale hybrid piezoelectric and charge sensors, as well as building blocks in quantum information processing and simulation platforms.

Use of portable electronic devices in a hospital setting and their potential for bacterial colonization.

PubMed

Khan, Amber; Rao, Amitha; Reyes-Sacin, Carlos; Hayakawa, Kayoko; Szpunar, Susan; Riederer, Kathleen; Kaye, Keith; Fishbain, Joel T; Levine, Diane

2015-03-01

Portable electronic devices are increasingly being used in the hospital setting. As with other fomites, these devices represent a potential reservoir for the transmission of pathogens. We conducted a convenience sampling of devices in 2 large medical centers to identify bacterial colonization rates and potential risk factors. Copyright © 2015 Association for Professionals in Infection Control and Epidemiology, Inc. Published by Elsevier Inc. All rights reserved.

Electron transport through magnetic quantum point contacts

NASA Astrophysics Data System (ADS)

Day, Timothy Ellis

Spin-based electronics, or spintronics, has generated a great deal of interest as a possible next-generation integrated circuit technology. Recent experimental and theoretical work has shown that these devices could exhibit increased processing speed, decreased power consumption, and increased integration densities as compared with conventional semiconductor devices. The spintronic device that was designed, fabricated, and tested throughout the course of this work aimed to study the generation of spin-polarized currents in semiconductors using magnetic fringe fields. The device scheme relied on the Zeeman effect in combination with a quantum mechanical barrier to generate spin-polarized currents. The Zeeman effect was used to break the degeneracy of spin-up and spin-down electrons and the quantum mechanical potential to transmit one while rejecting the other. The design was dictated by the drive to maximize the strength of the magnetic fringe field and in turn maximize the energy separation of the two spin species. The device was fabricated using advanced techniques in semiconductor processing including electron beam lithography and DC magnetron sputtering. Measurements were performed in a 3He cryostat equipped with a superconducting magnet at temperatures below 300 mK. Preliminary characterization of the device revealed magnetoconductance oscillations produced by the effect of the transverse confining potential on the density of states and the mobility. Evidence of the effect of the magnetic fringe fields on the transport properties of electrons in the device were observed in multiple device measurements. An abrupt washout of the quantized conductance steps was observed over a minute range of the applied magnetic field. The washout was again observed as electrons were shifted closer to the magnetic gates. In addition, bias spectroscopy demonstrated that the washout occurred despite stronger electron confinement, as compared to a non-magnetic split-gate. Thus, the measurements indicated that conductance quantization breaks down in a non-uniform magnetic field, possibly due to changes to the stationary Landau states. It was also demonstrated that non-integer conductance plateaus at high source-drain bias are not caused by a macroscopic asymmetry in the potential drop.

Proton conducting membrane using a solid acid

NASA Technical Reports Server (NTRS)

Boysen, Dane A. (Inventor); Narayanan, Sekharipuram R. (Inventor); Haile, Sossina M. (Inventor); Chisholm, Calum (Inventor)

2006-01-01

A solid acid material is used as a proton conducting membrane in an electrochemical device. The solid acid material can be one of a plurality of different kinds of materials. A binder can be added, and that binder can be either a nonconducting or a conducting binder. Nonconducting binders can be, for example, a polymer or a glass. A conducting binder enables the device to be both proton conducting and electron conducting.

Composite Material Switches

NASA Technical Reports Server (NTRS)

Javadi, Hamid (Inventor)

2001-01-01

A device to protect electronic circuitry from high voltage transients is constructed from a relatively thin piece of conductive composite sandwiched between two conductors so that conduction is through the thickness of the composite piece. The device is based on the discovery that conduction through conductive composite materials in this configuration switches to a high resistance mode when exposed to voltages above a threshold voltage.

Composite Material Switches

NASA Technical Reports Server (NTRS)

Javadi, Hamid (Inventor)

2002-01-01

A device to protect electronic circuitry from high voltage transients is constructed from a relatively thin piece of conductive composite sandwiched between two conductors so that conduction is through the thickness of the composite piece. The device is based on the discovery that conduction through conductive composite materials in this configuration switches to a high resistance mode when exposed to voltages above a threshold voltage.

Quantum transport properties of carbon nanotube field-effect transistors with electron-phonon coupling

NASA Astrophysics Data System (ADS)

Ishii, Hiroyuki; Kobayashi, Nobuhiko; Hirose, Kenji

2007-11-01

We investigated the electron-phonon coupling effects on the electronic transport properties of metallic (5,5)- and semiconducting (10,0)-carbon nanotube devices. We calculated the conductance and mobility of the carbon nanotubes with micron-order lengths at room temperature, using the time-dependent wave-packet approach based on the Kubo-Greenwood formula within a tight-binding approximation. We investigated the scattering effects of both longitudinal acoustic and optical phonon modes on the transport properties. The electron-optical phonon coupling decreases the conductance around the Fermi energy for the metallic carbon nanotubes, while the conductance of semiconductor nanotubes is decreased around the band edges by the acoustic phonons. Furthermore, we studied the Schottky-barrier effects on the mobility of the semiconducting carbon nanotube field-effect transistors for various gate voltages. We clarified how the electron mobilities of the devices are changed by the acoustic phonon.

Chemical and Physical Approaches to the Modulation of the Electronic Structure, Conductivities and Optical Properties of SWNT Thin Films

NASA Astrophysics Data System (ADS)

Moser, Matthew Lee

Since their discovery two decades ago, single walled carbon nanotubes (SWNT) have created an expansion of scientific interest that continues to grow to this day. This is due to a good balance between presence of bandgap, chemical reactivity and electrical conductivity. By interconnection of the individual nanotubes or modulation of the SWNT's electronic states, electronic devices made with thin films can become candidates for next generation electronics in areas such as memory devices, spintronics, energy storage devices and optoelectronics. My thesis focuses on the modulation of the electronic structure, optical properties and transport characteristics of single walled carbon nanotube films and their application in electronic and optoelectronic devices. Individual SWNTs have exceptional electronic properties but are difficult to manipulate for use in electronic devices. Alternatively, devices utilize SWNTs in thin films. SWNT thin films, however, may lose some of the properties due to Schottky barriers and electron hoping between metal-nanotube junctions and individual nanotubes within the film, respectively. Until recently, there has been no known route to preserve both conjugation and electrical properties. Prior attempts using covalent chemical functionalization led to re-hybridization of sp2 carbon centers to sp3, which introduces defects into the material and results in a decrease of electron mobility. As was discovered in Haddon Research group, depositing Group VI transition metals via atomic vapor deposition into SWNT films results in formation of bis-hexahapto covalent bonds. This (eta6-SWNT) Metal (eta6-SWNT) type of bonding was found to interconnect the delocalized systems without inducing structural re-hybridization and results in a decrease of the thin films electrical resistance. Recently, with the assistance of electron beam deposition, we deposited atomic metal vapor of various lanthanide metals on the SWNT thin films with the idea that they would also form covalent interconnects between nanotube sidewalls. In the case of highly electropositive lanthanides, the possibility of hexahapto bonding combined with ionic character can be evaluated and theorized. We have reported the first use of lanthanides to enhance the conductivities of SWNT thin films and showed that these metals can not only form bis-hexahapto interconnects at the SWNT junctions but can also inject electrons into the conduction bands of the SWNTs, forming a new type of mixed covalent-ionic bonding in the SWNT network. By monitoring electrical resistance and taking spectroscopic measurements of the Near-Infrared region we are able to show the correlation between enhanced conductivity and suppression of the S 11 interband transition of semiconducting SWNTs. Potential applications of SWNT thin films as electrochromic windows require reversible modulation of the electronic structure. In order to fabricate SWNTs devices which allow for this behavior it is necessary to modulate the electronic structure by physical means such as the application of an electrical potential. We found that ionic solutions can assist with maintaining complete suppression of two Van Hove singularities in the Density of States of semiconducting SWNTs which results in optically transparent windows in the Near-Infrared region, similar to the effect seen with the incorporation of atomic lanthanide metals in thin films. We demonstrate this behavior to provide a route to nanotube based optoelectronic devices in which we use electric fields to reversibly dope the SWNT films and thereby achieve controllable modulation of optical properties of SWNT thin film.

Single Molecule Conductance of Oligothiophene Derivatives

NASA Astrophysics Data System (ADS)

Dell, Emma J.

This thesis studies the electronic properties of small organic molecules based on the thiophene motif. If we are to build next-generation devices, advanced materials must be designed which possess requisite electronic functionality. Molecules present attractive candidates for these ad- vanced materials since nanoscale devices are particularly sought after. However, selecting a molecule that is suited to a certain electronic function remains a challenge, and characterization of electronic behavior is therefore critical. Single molecule conductance measurements are a powerful tool to determine properties on the nanoscale and, as such, can be used to investigate novel building blocks that may fulfill the design requirements of next-generation devices. Combining these conductance results with strategic chemical synthesis allows for the development of new families of molecules that show attractive properties for future electronic devices. Since thiophene rings are the fruitflies of organic semiconductors on the bulk scale, they present an intriguing starting point for building functional materials on the nanoscale, and therefore form the structural basis of all molecules studied herein. First, the single-molecule conductance of a family of bithiophene derivatives was measured. A broad distribution in the single-molecule conductance of bithiophene was found compared with that of a biphenyl. This increased breadth in the conductance distribution was shown to be explained by the difference in 5-fold symmetry of thiophene rings as compared to the 6-fold symmetry of benzene rings. The reduced symmetry of thiophene rings results in a restriction on the torsion angle space available to these molecules when bound between two metal electrodes in a junction, causing each molecular junction to sample a different set of conformers in the conductance measurements. By contrast, the rotations of biphenyl are essentially unimpeded by junction binding, allowing each molecular junction to sample similar conformers. This work demonstrates that the conductance of bithiophene displays a strong dependence on the conformational fluctuations accessible within a given junction configuration, and that the symmetry of such small molecules can significantly influence their conductance behavior. Next, the single-molecule conductance of a family of oligothiophenes comprising one to six thiophene units was measured. An anomalous behavior was found: the peak of the conductance histogram distribution did not follow a clear exponential decay with increasing number of thiophene units in the chain. The electronic properties of the materials were characterized by optical spectroscopy and electrochemistry to gain an understanding of the factors affecting the conductance of these molecules. Different conformers in the junction were postulated to be a contributing factor to the anomalous trend in the observed conductance as a function of molecule length. Then, the electronic properties of the thiophene-1,1-dioxide unit were investigated. These motifs have become synthetically accessible in the last decade, due to Rozen's unprecedentedly potent oxidizing reagent - HOF˙CH 3CN - which has been shown to be powerful yet selective enough to oxidize thiophenes in various environments. The resulting thiophene-1,1-dioxides show great promise for electronic devices. The oxidation chemistry of thiophenes was expanded and tuning of the frontier energy levels was demonstrated through combining electron poor and electron rich units. Finally, charge carriers in single-molecule junctions were shown to be tunable within a family of molecules containing these thiophene-1,1-dioxide (TDO) building blocks. Oligomers of TDO were designed in order to increase electron affinity, maintain delocalized frontier orbitals, while significantly decreasing the transport gap. Through thermopower measurements, the dominant charge carriers were shown to change from holes to electrons as the number of TDO units was increased. This resulted in a unique system in which the charge carrier depends on backbone length, providing a new means to tune p- and n-type transport in organic materials. Taken together, the results presented in this thesis offer an insight into how molecular symme- try and the accessible conformers within a junction have important consequences on conductance behavior. Additionally, thiophene-1,1-dioxide is shown to be an exciting unit for single molecule devices, especially when combined with electron rich thiophene flanking groups. By demon- strating, for the first time, a change in conductance pathway with molecular length, this work provides a framework for using frontier orbital levels to strategically design electronic building blocks.

Structural control of mixed ionic and electronic transport in conducting polymers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rivnay, Jonathan; Inal, Sahika; Collins, Brian A.

Poly(3,4-ethylenedioxythiophene) doped with poly(styrenesulfonate), PEDOT:PSS, has been utilized for over two decades as a stable, solution-processable hole conductor. While its hole transport properties have been the subject of intense investigation, recent work has turned to PEDOT:PSS as a mixed ionic/electronic conductor in applications including bioelectronics, energy storage and management, and soft robotics. Conducting polymers can efficiently transport both holes and ions when sufficiently hydrated, however, little is known about the role of morphology on mixed conduction. Here, we show that bulk ionic and electronic mobilities are simultaneously affected by processing-induced changes in nano- and meso-scale structure in PEDOT:PSS films. Wemore » quantify domain composition, and find that domain purification on addition of dispersion co-solvents limits ion mobility, even while electronic conductivity improves. We show that an optimal morphology allows for the balanced ionic and electronic transport that is critical for prototypical mixed conductor devices. As a result, these findings may pave the way for the rational design of polymeric materials and processing routes to enhance devices reliant on mixed conduction.« less

Structural control of mixed ionic and electronic transport in conducting polymers

DOE PAGES

Rivnay, Jonathan; Inal, Sahika; Collins, Brian A.; ...

2016-04-19

Poly(3,4-ethylenedioxythiophene) doped with poly(styrenesulfonate), PEDOT:PSS, has been utilized for over two decades as a stable, solution-processable hole conductor. While its hole transport properties have been the subject of intense investigation, recent work has turned to PEDOT:PSS as a mixed ionic/electronic conductor in applications including bioelectronics, energy storage and management, and soft robotics. Conducting polymers can efficiently transport both holes and ions when sufficiently hydrated, however, little is known about the role of morphology on mixed conduction. Here, we show that bulk ionic and electronic mobilities are simultaneously affected by processing-induced changes in nano- and meso-scale structure in PEDOT:PSS films. Wemore » quantify domain composition, and find that domain purification on addition of dispersion co-solvents limits ion mobility, even while electronic conductivity improves. We show that an optimal morphology allows for the balanced ionic and electronic transport that is critical for prototypical mixed conductor devices. As a result, these findings may pave the way for the rational design of polymeric materials and processing routes to enhance devices reliant on mixed conduction.« less

Stretchable, porous, and conductive energy textiles.

PubMed

Hu, Liangbing; Pasta, Mauro; Mantia, Fabio La; Cui, Lifeng; Jeong, Sangmoo; Deshazer, Heather Dawn; Choi, Jang Wook; Han, Seung Min; Cui, Yi

2010-02-10

Recently there is strong interest in lightweight, flexible, and wearable electronics to meet the technological demands of modern society. Integrated energy storage devices of this type are a key area that is still significantly underdeveloped. Here, we describe wearable power devices using everyday textiles as the platform. With an extremely simple "dipping and drying" process using single-walled carbon nanotube (SWNT) ink, we produced highly conductive textiles with conductivity of 125 S cm(-1) and sheet resistance less than 1 Omega/sq. Such conductive textiles show outstanding flexibility and stretchability and demonstrate strong adhesion between the SWNTs and the textiles of interest. Supercapacitors made from these conductive textiles show high areal capacitance, up to 0.48F/cm(2), and high specific energy. We demonstrate the loading of pseudocapacitor materials into these conductive textiles that leads to a 24-fold increase of the areal capacitance of the device. These highly conductive textiles can provide new design opportunities for wearable electronics and energy storage applications.

Stretchable electronics for wearable and high-current applications

NASA Astrophysics Data System (ADS)

Hilbich, Daniel; Shannon, Lesley; Gray, Bonnie L.

2016-04-01

Advances in the development of novel materials and fabrication processes are resulting in an increased number of flexible and stretchable electronics applications. This evolving technology enables new devices that are not readily fabricated using traditional silicon processes, and has the potential to transform many industries, including personalized healthcare, consumer electronics, and communication. Fabrication of stretchable devices is typically achieved through the use of stretchable polymer-based conductors, or more rigid conductors, such as metals, with patterned geometries that can accommodate stretching. Although the application space for stretchable electronics is extensive, the practicality of these devices can be severely limited by power consumption and cost. Moreover, strict process flows can impede innovation that would otherwise enable new applications. In an effort to overcome these impediments, we present two modified approaches and applications based on a newly developed process for stretchable and flexible electronics fabrication. This includes the development of a metallization pattern stamping process allowing for 1) stretchable interconnects to be directly integrated with stretchable/wearable fabrics, and 2) a process variation enabling aligned multi-layer devices with integrated ferromagnetic nanocomposite polymer components enabling a fully-flexible electromagnetic microactuator for large-magnitude magnetic field generation. The wearable interconnects are measured, showing high conductivity, and can accommodate over 20% strain before experiencing conductive failure. The electromagnetic actuators have been fabricated and initial measurements show well-aligned, highly conductive, isolated metal layers. These two applications demonstrate the versatility of the newly developed process and suggest potential for its furthered use in stretchable electronics and MEMS applications.

A 50/50 electronic beam splitter in graphene nanoribbons as a building block for electron optics.

PubMed

Lima, Leandro R F; Hernández, Alexis R; Pinheiro, Felipe A; Lewenkopf, Caio

2016-12-21

Based on the investigation of the multi-terminal conductance of a system composed of two graphene nanoribbons, in which one is on top of the other and rotated by [Formula: see text], we propose a setup for a 50/50 electronic beam splitter that neither requires large magnetic fields nor ultra low temperatures. Our findings are based on an atomistic tight-binding description of the system and on the Green function method to compute the Landauer conductance. We demonstrate that this system acts as a perfect 50/50 electronic beam splitter, in which its operation can be switched on and off by varying the doping (Fermi energy). We show that this device is robust against thermal fluctuations and long range disorder, as zigzag valley chiral states of the nanoribbons are protected against backscattering. We suggest that the proposed device can be applied as the fundamental element of the Hong-Ou-Mandel interferometer, as well as a building block of many devices in electron optics.

Transparent resistive switching memory using aluminum oxide on a flexible substrate

NASA Astrophysics Data System (ADS)

Yeom, Seung-Won; Shin, Sang-Chul; Kim, Tan-Young; Ha, Hyeon Jun; Lee, Yun-Hi; Shim, Jae Won; Ju, Byeong-Kwon

2016-02-01

Resistive switching memory (ReRAM) has attracted much attention in recent times owing to its fast switching, simple structure, and non-volatility. Flexible and transparent electronic devices have also attracted considerable attention. We therefore fabricated an Al2O3-based ReRAM with transparent indium-zinc-oxide (IZO) electrodes on a flexible substrate. The device transmittance was found to be higher than 80% in the visible region (400-800 nm). Bended states (radius = 10 mm) of the device also did not affect the memory performance because of the flexibility of the two transparent IZO electrodes and the thin Al2O3 layer. The conduction mechanism of the resistive switching of our device was explained by ohmic conduction and a Poole-Frenkel emission model. The conduction mechanism was proved by oxygen vacancies in the Al2O3 layer, as analyzed by x-ray photoelectron spectroscopy analysis. These results encourage the application of ReRAM in flexible and transparent electronic devices.

Electronic adherence monitoring device performance and patient acceptability: a randomized control trial.

PubMed

Chan, Amy Hai Yan; Stewart, Alistair William; Harrison, Jeff; Black, Peter Nigel; Mitchell, Edwin Arthur; Foster, Juliet Michelle

2017-05-01

To investigate the performance and patient acceptability of an inhaler electronic monitoring device in a real-world childhood asthma population. Children 6 to 15 years presenting with asthma to the hospital emergency department and prescribed inhaled corticosteroids were included. Participants were randomized to receive a device with reminder features enabled or disabled for use with their preventer. Device quality control tests were conducted. Questionnaires on device acceptability, utility and ergonomics were completed at six months. A total of 1306 quality control tests were conducted; 84% passed pre-issue and 87% return testing. The most common failure reason was actuation under-recording. Acceptability scores were high, with higher scores in the reminder than non-reminder group (median, 5 th -95 th percentile: 4.1, 3.1-5.0 versus 3.7, 2.3-4.8; p < 0.001). Most (>90%) rated the device easy to use. Feedback was positive across five themes: device acceptability, ringtone acceptability, suggestions for improvement, effect on medication use, and effect on asthma control. This study investigates electronic monitoring device performance and acceptability in children using quantitative and qualitative measures. Results indicate satisfactory reliability, although failure rates of 13-16% indicate the importance of quality control. Favorable acceptability ratings support the use of these devices in children.

Balancing Hole and Electron Conduction in Ambipolar Split-Gate Thin-Film Transistors.

PubMed

Yoo, Hocheon; Ghittorelli, Matteo; Lee, Dong-Kyu; Smits, Edsger C P; Gelinck, Gerwin H; Ahn, Hyungju; Lee, Han-Koo; Torricelli, Fabrizio; Kim, Jae-Joon

2017-07-10

Complementary organic electronics is a key enabling technology for the development of new applications including smart ubiquitous sensors, wearable electronics, and healthcare devices. High-performance, high-functionality and reliable complementary circuits require n- and p-type thin-film transistors with balanced characteristics. Recent advancements in ambipolar organic transistors in terms of semiconductor and device engineering demonstrate the great potential of this route but, unfortunately, the actual development of ambipolar organic complementary electronics is currently hampered by the uneven electron (n-type) and hole (p-type) conduction in ambipolar organic transistors. Here we show ambipolar organic thin-film transistors with balanced n-type and p-type operation. By manipulating air exposure and vacuum annealing conditions, we show that well-balanced electron and hole transport properties can be easily obtained. The method is used to control hole and electron conductions in split-gate transistors based on a solution-processed donor-acceptor semiconducting polymer. Complementary logic inverters with balanced charging and discharging characteristics are demonstrated. These findings may open up new opportunities for the rational design of complementary electronics based on ambipolar organic transistors.

Wearable Fall Detector using Integrated Sensors and Energy Devices

NASA Astrophysics Data System (ADS)

Jung, Sungmook; Hong, Seungki; Kim, Jaemin; Lee, Sangkyu; Hyeon, Taeghwan; Lee, Minbaek; Kim, Dae-Hyeong

2015-11-01

Wearable devices have attracted great attentions as next-generation electronic devices. For the comfortable, portable, and easy-to-use system platform in wearable electronics, a key requirement is to replace conventional bulky and rigid energy devices into thin and deformable ones accompanying the capability of long-term energy supply. Here, we demonstrate a wearable fall detection system composed of a wristband-type deformable triboelectric generator and lithium ion battery in conjunction with integrated sensors, controllers, and wireless units. A stretchable conductive nylon is used as electrodes of the triboelectric generator and the interconnection between battery cells. Ethoxylated polyethylenimine, coated on the surface of the conductive nylon electrode, tunes the work function of a triboelectric generator and maximizes its performance. The electrical energy harvested from the triboelectric generator through human body motions continuously recharges the stretchable battery and prolongs hours of its use. The integrated energy supply system runs the 3-axis accelerometer and related electronics that record human body motions and send the data wirelessly. Upon the unexpected fall occurring, a custom-made software discriminates the fall signal and an emergency alert is immediately sent to an external mobile device. This wearable fall detection system would provide new opportunities in the mobile electronics and wearable healthcare.

Wearable Fall Detector using Integrated Sensors and Energy Devices.

PubMed

Jung, Sungmook; Hong, Seungki; Kim, Jaemin; Lee, Sangkyu; Hyeon, Taeghwan; Lee, Minbaek; Kim, Dae-Hyeong

2015-11-24

Wearable devices have attracted great attentions as next-generation electronic devices. For the comfortable, portable, and easy-to-use system platform in wearable electronics, a key requirement is to replace conventional bulky and rigid energy devices into thin and deformable ones accompanying the capability of long-term energy supply. Here, we demonstrate a wearable fall detection system composed of a wristband-type deformable triboelectric generator and lithium ion battery in conjunction with integrated sensors, controllers, and wireless units. A stretchable conductive nylon is used as electrodes of the triboelectric generator and the interconnection between battery cells. Ethoxylated polyethylenimine, coated on the surface of the conductive nylon electrode, tunes the work function of a triboelectric generator and maximizes its performance. The electrical energy harvested from the triboelectric generator through human body motions continuously recharges the stretchable battery and prolongs hours of its use. The integrated energy supply system runs the 3-axis accelerometer and related electronics that record human body motions and send the data wirelessly. Upon the unexpected fall occurring, a custom-made software discriminates the fall signal and an emergency alert is immediately sent to an external mobile device. This wearable fall detection system would provide new opportunities in the mobile electronics and wearable healthcare.

Metallic Junction Thermoelectric Device Simulations

NASA Technical Reports Server (NTRS)

Duzik, Adam J.; Choi, Sang H.

2017-01-01

Thermoelectric junctions made of semiconductors have existed in radioisotope thermoelectric generators (RTG) for deep space missions, but are currently being adapted for terrestrial energy harvesting. Unfortunately, these devices are inefficient, operating at only 7% efficiency. This low efficiency has driven efforts to make high-figure-of-merit thermoelectric devices, which require a high electrical conductivity but a low thermal conductivity, a combination that is difficult to achieve. Lowered thermal conductivity has increased efficiency, but at the cost of power output. An alternative setup is to use metallic junctions rather than semiconductors as thermoelectric devices. Metals have orders of magnitude more electrons and electronic conductivities higher than semiconductors, but thermal conductivity is higher as well. To evaluate the viability of metallic junction thermoelectrics, a two dimensional heat transfer MATLAB simulation was constructed to calculate efficiency and power output. High Seebeck coefficient alloys, Chromel (90%Ni-10%Cr) and Constantan (55%Cu-45%Ni), produced efficiencies of around 20-30%. Parameters such as the number of layers of junctions, lateral junction density, and junction sizes for both series- and parallel-connected junctions were explored.

Experimental Evaluation and Comparison of Thermal Conductivity of High-Voltage Insulation Materials for Vacuum Electronic Devices

NASA Astrophysics Data System (ADS)

Suresh, C.; Srikrishna, P.

2017-07-01

Vacuum electronic devices operate with very high voltage differences between their sub-assemblies which are separated by very small distances. These devices also emit large amounts of heat that needs to be dissipated. Hence, there exists a requirement for high-voltage insulators with good thermal conductivity for voltage isolation and efficient heat dissipation. However, these voltage insulators are generally poor conductors of heat. In the present work, an effort has been made to obtain good high-voltage insulation materials with substantial improvement in their thermal conductivity. New mixtures of composites were formed by blending varying percentages (by volumes) of aluminum nitride powders with that of neat room-temperature vulcanizing (RTV) silicone elastomer compound. In this work, a thermal conductivity test setup has been devised for the quantification of the thermal conductivity of the insulators. The thermal conductivities and high-voltage isolation capabilities of various blended composites were quantified and were compared with that of neat RTV to evaluate the relative improvement.

Superlattice structure modeling and simulation of High Electron Mobility Transistor for improved performance

NASA Astrophysics Data System (ADS)

Munusami, Ravindiran; Yakkala, Bhaskar Rao; Prabhakar, Shankar

2013-12-01

Magnetic tunnel junction were made by inserting the magnetic materials between the source, channel and the drain of the High Electron Mobility Transistor (HEMT) to enhance the performance. Material studio software package was used to design the superlattice layers. Different cases were analyzed to optimize the performance of the device by placing the magnetic material at different positions of the device. Simulation results based on conductivity reveals that the device has a very good electron transport due to the magnetic materials and will amplify very low frequency signals.

Plasma Jet Printing and in Situ Reduction of Highly Acidic Graphene Oxide.

PubMed

Dey, Avishek; Krishnamurthy, Satheesh; Bowen, James; Nordlund, Dennis; Meyyappan, M; Gandhiraman, Ram P

2018-05-23

Miniaturization of electronic devices and the advancement of Internet of Things pose exciting challenges to develop technologies for patterned deposition of functional nanomaterials. Printed and flexible electronic devices and energy storage devices can be embedded onto clothing or other flexible surfaces. Graphene oxide (GO) has gained much attention in printed electronics due its solution processability, robustness, and high electrical conductivity in the reduced state. Here, we introduce an approach to print GO films from highly acidic suspensions with in situ reduction using an atmospheric pressure plasma jet. Low-temperature plasma of a He and H 2 mixture was used successfully to reduce a highly acidic GO suspension (pH < 2) in situ during deposition. This technique overcomes the multiple intermediate steps required to increase the conductivity of deposited GO. X-ray spectroscopic studies confirmed that the reaction intermediates and the concentration of oxygen functionalities bonded to GO have been reduced significantly by this approach without any additional steps. Moreover, the reduced GO films showed enhanced conductivity. Hence, this technique has a strong potential for printing conducting patterns of GO for a range of large-scale applications.

Bacterial wetwood detection in Fagus grandifolia and Prunus serotina sapwood using a conducting polymer electronic-nose device

Treesearch

A.D. Wilson

2014-01-01

New electronic gas-detection methods were developed and tested for the diagnosis of bacterial wetwood disease in Fagus grandifolia (American beech) and Prunus serotina (black cherry) using a Conducting Polymer (CP)-type electronic nose (e-nose), the Aromascan A32S, based on detection of headspace...

Organic Electronic Devices Using Crosslinked Polyelectrolyte Multilayers as an Ultra-Thin Dielectric Material

DTIC Science & Technology

2006-09-01

energy band diagram illustrating the allowed energies for valence and conducting electrons. The dashes within the band gap (Eg) represent localized ...allowed energies for valence and conducting electrons. The dashes within the band gap (Eg) represent localized electron energy states, or traps, that...been observed with the formation of alternating bond lengths along the backbone.43 The localization of the π-electrons while forming the shorter double

Biologically Derived Soft Conducting Hydrogels Using Heparin-Doped Polymer Networks

PubMed Central

2015-01-01

The emergence of flexible and stretchable electronic components expands the range of applications of electronic devices. Flexible devices are ideally suited for electronic biointerfaces because of mechanically permissive structures that conform to curvilinear structures found in native tissue. Most electronic materials used in these applications exhibit elastic moduli on the order of 0.1–1 MPa. However, many electronically excitable tissues exhibit elasticities in the range of 1–10 kPa, several orders of magnitude smaller than existing components used in flexible devices. This work describes the use of biologically derived heparins as scaffold materials for fabricating networks with hybrid electronic/ionic conductivity and ultracompliant mechanical properties. Photo-cross-linkable heparin–methacrylate hydrogels serve as templates to control the microstructure and doping of in situ polymerized polyaniline structures. Macroscopic heparin-doped polyaniline hydrogel dual networks exhibit impedances as low as Z = 4.17 Ω at 1 kHz and storage moduli of G′ = 900 ± 100 Pa. The conductivity of heparin/polyaniline networks depends on the oxidation state and microstructure of secondary polyaniline networks. Furthermore, heparin/polyaniline networks support the attachment, proliferation, and differentiation of murine myoblasts without any surface treatments. Taken together, these results suggest that heparin/polyaniline hydrogel networks exhibit suitable physical properties as an electronically active biointerface material that can match the mechanical properties of soft tissues composed of excitable cells. PMID:24738911

Ferroelectric polarization induces electronic nonlinearity in ion-doped conducting polymers

PubMed Central

Fabiano, Simone; Sani, Negar; Kawahara, Jun; Kergoat, Loïg; Nissa, Josefin; Engquist, Isak; Crispin, Xavier; Berggren, Magnus

2017-01-01

Poly(3,4-ethylenedioxythiophene):polystyrene sulfonate (PEDOT:PSS) is an organic mixed ion-electron conducting polymer. The PEDOT phase transports holes and is redox-active, whereas the PSS phase transports ions. When PEDOT is redox-switched between its semiconducting and conducting state, the electronic and optical properties of its bulk are controlled. Therefore, it is appealing to use this transition in electrochemical devices and to integrate those into large-scale circuits, such as display or memory matrices. Addressability and memory functionality of individual devices, within these matrices, are typically achieved by nonlinear current-voltage characteristics and bistability—functions that can potentially be offered by the semiconductor-conductor transition of redox polymers. However, low conductivity of the semiconducting state and poor bistability, due to self-discharge, make fast operation and memory retention impossible. We report that a ferroelectric polymer layer, coated along the counter electrode, can control the redox state of PEDOT. The polarization switching characteristics of the ferroelectric polymer, which take place as the coercive field is overcome, introduce desired nonlinearity and bistability in devices that maintain PEDOT in its highly conducting and fast-operating regime. Memory functionality and addressability are demonstrated in ferro-electrochromic display pixels and ferro-electrochemical transistors. PMID:28695197

Internal Electric Field Modulation in Molecular Electronic Devices by Atmosphere and Mobile Ions.

PubMed

Chandra Mondal, Prakash; Tefashe, Ushula M; McCreery, Richard L

2018-06-13

The internal potential profile and electric field are major factors controlling the electronic behavior of molecular electronic junctions consisting of ∼1-10 nm thick layers of molecules oriented in parallel between conducting contacts. The potential profile is assumed linear in the simplest cases, but can be affected by internal dipoles, charge polarization, and electronic coupling between the contacts and the molecular layer. Electrochemical processes in solutions or the solid state are entirely dependent on modification of the electric field by electrolyte ions, which screen the electrodes and form the ionic double layers that are fundamental to electrode kinetics and widespread applications. The current report investigates the effects of mobile ions on nominally solid-state molecular junctions containing aromatic molecules covalently bonded between flat, conducting carbon surfaces, focusing on changes in device conductance when ions are introduced into an otherwise conventional junction design. Small changes in conductance were observed when a polar molecule, acetonitrile, was present in the junction, and a large decrease of conductance was observed when both acetonitrile (ACN) and lithium ions (Li + ) were present. Transient experiments revealed that conductance changes occur on a microsecond-millisecond time scale, and are accompanied by significant alteration of device impedance and temperature dependence. A single molecular junction containing lithium benzoate could be reversibly transformed from symmetric current-voltage behavior to a rectifier by repetitive bias scans. The results are consistent with field-induced reorientation of acetonitrile molecules and Li + ion motion, which screen the electrodes and modify the internal potential profile and provide a potentially useful means to dynamically alter junction electronic behavior.

Dimensional quantization effects in the thermodynamics of conductive filaments

NASA Astrophysics Data System (ADS)

Niraula, D.; Grice, C. R.; Karpov, V. G.

2018-06-01

We consider the physical effects of dimensional quantization in conductive filaments that underlie operations of some modern electronic devices. We show that, as a result of quantization, a sufficiently thin filament acquires a positive charge. Several applications of this finding include the host material polarization, the stability of filament constrictions, the equilibrium filament radius, polarity in device switching, and quantization of conductance.

Dimensional quantization effects in the thermodynamics of conductive filaments.

PubMed

Niraula, D; Grice, C R; Karpov, V G

2018-06-29

We consider the physical effects of dimensional quantization in conductive filaments that underlie operations of some modern electronic devices. We show that, as a result of quantization, a sufficiently thin filament acquires a positive charge. Several applications of this finding include the host material polarization, the stability of filament constrictions, the equilibrium filament radius, polarity in device switching, and quantization of conductance.

Thick Films: Electronic Applications. (Latest citations from the Aerospace Database)

NASA Technical Reports Server (NTRS)

1996-01-01

The bibliography contains citations concerning the design, development, fabrication, and evaluation of thick film electronic devices. Thick film solar cells, thick films for radiation conduction, deposition processes, conductive inks are among the topics discussed. Applications in military and civilian avionics are examined.

Nanotube phonon waveguide

DOEpatents

Chang, Chih-Wei; Zettl, Alexander K.

2013-10-29

Disclosed are methods and devices in which certain types of nanotubes (e.g., carbon nanotubes and boron nitride nanotubes conduct heat with high efficiency and are therefore useful in electronic-type devices.

New Mixed Conductivity Mechanisms in the Cold Plasma Device Based on Silver-Modified Zeolite Microporous Electronic Materials

NASA Astrophysics Data System (ADS)

Koç, Sevgul Ozturk; Galioglu, Sezin; Ozturk, Seckin; Kurç, Burcu Akata; Koç, Emrah; Salamov, Bahtiyar G.

2018-02-01

We have analyzed the interaction between microdischarge and microporous zeolite electronic materials modified by silver (Ag0) nanoparticles (resistivity 1011 to 106 Ω cm) on the atmospheric pressure cold plasma generation in air. The generation and maintenance of stable cold plasma is studied according to the effect of the Ag0 nanoparticles. The role of charge carriers in mixed conductivity processes and electrical features of zeolite from low pressure to atmospheric pressure is analyzed in air microplasmas for both before and after breakdown regimes. The results obtained from the experiments indicate that Ag0 nanoparticles play a significant role in considerably reducing the breakdown voltage in plasma electronic devices with microporous zeolite electronic materials.

Development and applications of transparent conductive nanocellulose paper

NASA Astrophysics Data System (ADS)

Li, Shaohui; Lee, Pooi See

2017-12-01

Increasing attention has been paid to the next generation of 'green' electronic devices based on renewable nanocellulose, owing to its low roughness, good thermal stability and excellent optical properties. Various proof-of-concept transparent nanopaper-based electronic devices have been fabricated; these devices exhibit excellent flexibility, bendability and even foldability. In this review, we summarize the recent progress of transparent nanopaper that uses different types of nanocellulose, including pure nanocellulose paper and composite nanocellulose paper. The latest development of transparent and flexible nanopaper electronic devices are illustrated, such as electrochromic devices, touch sensors, solar cells and transistors. Finally, we discuss the advantages of transparent nanopaper compared to conventional flexible plastic substrate and the existing challenges to be tackled in order to realize this promising potential.

Lithium-ion batteries having conformal solid electrolyte layers

DOEpatents

Kim, Gi-Heon; Jung, Yoon Seok

2014-05-27

Hybrid solid-liquid electrolyte lithium-ion battery devices are disclosed. Certain devices comprise anodes and cathodes conformally coated with an electron insulating and lithium ion conductive solid electrolyte layer.

Electronic system for high power load control. [solar arrays

NASA Technical Reports Server (NTRS)

Miller, E. L. (Inventor)

1980-01-01

Parallel current paths are divided into two groups, with control devices in the current paths of one group each having a current limiting resistor, and the control devices in the other group each having no limiting resistor, so that when the control devices of the second group are turned fully on, a short circuit is achieved by the arrangement of parallel current paths. Separate but coordinated control signals are provided to turn on the control devices of the first group and increase their conduction toward saturation as a function of control input, and when fully on, or shortly before, to turn on the control devices of the second group and increase their conduction toward saturation as a function of the control input as that input continues to increase. Electronic means may be used to generate signals. The system may be used for 1-V characteristic measurements of solar arrays as well as for other load control purposes.

Characterization of 3D interconnected microstructural network in mixed ionic and electronic conducting ceramic composites

NASA Astrophysics Data System (ADS)

Harris, William M.; Brinkman, Kyle S.; Lin, Ye; Su, Dong; Cocco, Alex P.; Nakajo, Arata; Degostin, Matthew B.; Chen-Wiegart, Yu-Chen Karen; Wang, Jun; Chen, Fanglin; Chu, Yong S.; Chiu, Wilson K. S.

2014-04-01

The microstructure and connectivity of the ionic and electronic conductive phases in composite ceramic membranes are directly related to device performance. Transmission electron microscopy (TEM) including chemical mapping combined with X-ray nanotomography (XNT) have been used to characterize the composition and 3-D microstructure of a MIEC composite model system consisting of a Ce0.8Gd0.2O2 (GDC) oxygen ion conductive phase and a CoFe2O4 (CFO) electronic conductive phase. The microstructural data is discussed, including the composition and distribution of an emergent phase which takes the form of isolated and distinct regions. Performance implications are considered with regards to the design of new material systems which evolve under non-equilibrium operating conditions.The microstructure and connectivity of the ionic and electronic conductive phases in composite ceramic membranes are directly related to device performance. Transmission electron microscopy (TEM) including chemical mapping combined with X-ray nanotomography (XNT) have been used to characterize the composition and 3-D microstructure of a MIEC composite model system consisting of a Ce0.8Gd0.2O2 (GDC) oxygen ion conductive phase and a CoFe2O4 (CFO) electronic conductive phase. The microstructural data is discussed, including the composition and distribution of an emergent phase which takes the form of isolated and distinct regions. Performance implications are considered with regards to the design of new material systems which evolve under non-equilibrium operating conditions. Electronic supplementary information (ESI) available. See DOI: 10.1039/c3nr06684c

Consumers' Use of Personal Electronic Devices in the Kitchen.

PubMed

Lando, Amy M; Bazaco, Michael C; Chen, Yi

2018-02-23

Smartphones, tablets, and other personal electronic devices have become ubiquitous in Americans' daily lives. These devices are used by people throughout the day, including while preparing food. For example, a device may be used to look at recipes and therefore be touched multiple times during food preparation. Previous research has indicated that cell phones can harbor bacteria, including opportunistic human pathogens such as Staphylococcus and Klebsiella spp. This investigation was conducted with data from the 2016 Food Safety Survey (FSS) and from subsequent focus groups to determine the frequency with which consumers use personal electronic devices in the kitchen while preparing food, the types of devices used, and hand washing behaviors after handling these devices. The 2016 FSS is the seventh wave of a repeated cross-sectional survey conducted by the U.S. Food and Drug Administration in collaboration with the U.S. Department of Agriculture. The goal of the FSS is to evaluate U.S. adult consumer attitudes, behaviors, and knowledge about food safety. The FSS included 4,169 adults that were contacted using a dual-frame (land line and cell phone interviews) random-digit-dial sampling process. The personal electronics module was the first of three food safety topics discussed by each of eight consumer focus groups, which were convened in four U.S. cities in fall 2016. Results from the 2016 FSS revealed that of those individuals who use personal electronic devices while cooking, only about one third reported washing hands after touching the device and before continuing cooking. This proportion is significantly lower than that for self-reported hand washing behaviors after touching risky food products such as raw eggs, meat, chicken, or fish. Results from the focus groups highlight the varied usage of these devices during food preparation and the related strategies consumers are using to incorporate personal electric devices into their cooking routines.

Chemical and charge transfer studies on interfaces of a conjugated polymer and ITO

NASA Astrophysics Data System (ADS)

David, Tanya M. S.; Arasho, Wondwosson; Smith, O'Neil; Hong, Kunlun; Bonner, Carl; Sun, Sam-Shajing

2017-08-01

Conjugated oligomers and polymers are very attractive for potential future plastic electronic and opto-electronic device applications such as plastic photo detectors and solar cells, thermoelectric devices, field effect transistors, and light emitting diodes. Understanding and optimizing charge transport between an active polymer layer and conductive substrate is critical to the optimization of polymer based electronic and opto-electronic devices. This study focused on the design, synthesis, self-assembly, and electron transfers and transports of a phosphonic acid end-functionalized polyphenylenevinylene (PPV) that was covalently attached and self-assembled onto an Indium Tin Oxide (ITO) substrate. This study demonstrated how atomic force microscopy (AFM) can be an effective characterization technique in conjunction with conventional electron transfer methods, including cyclic voltammetry (CV), towards determining electron transfer rates in polymer and polymer/conductor interface systems. This study found that the electron transfer rates of covalently attached and self-assembled films were much faster than the spin coated films. The knowledge from this study can be very useful for designing potential polymer based electronic and opto-electronic thin film devices.

Widely tunable band gap in a multivalley semiconductor SnSe by potassium doping

NASA Astrophysics Data System (ADS)

Zhang, Kenan; Deng, Ke; Li, Jiaheng; Zhang, Haoxiong; Yao, Wei; Denlinger, Jonathan; Wu, Yang; Duan, Wenhui; Zhou, Shuyun

2018-05-01

SnSe, a group IV-VI monochalcogenide with layered crystal structure similar to black phosphorus, has recently attracted extensive interest due to its excellent thermoelectric properties and potential device applications. Experimental electronic structure of both the valence and conduction bands is critical for understanding the effects of hole versus electron doping on the thermoelectric properties, and to further reveal possible change of the band gap upon doping. Here, we report the multivalley valence bands with a large effective mass on semiconducting SnSe crystals and reveal single-valley conduction bands through electron doping to provide a complete picture of the thermoelectric physics. Moreover, by electron doping through potassium deposition, the band gap of SnSe can be widely tuned from 1.2 eV to 0.4 eV, providing new opportunities for tunable electronic and optoelectronic devices.

Stretchable polymer-based electronic device

DOEpatents

Maghribi, Mariam N [Livermore, CA; Krulevitch, Peter A [Pleasanton, CA; Davidson, James Courtney [Livermore, CA; Wilson, Thomas S [Castro Valley, CA; Hamilton, Julie K [Tracy, CA; Benett, William J [Livermore, CA; Tovar, Armando R [San Antonio, TX

2008-02-26

A stretchable electronic circuit or electronic device and a polymer-based process to produce a circuit or electronic device containing a stretchable conducting circuit. The stretchable electronic apparatus has a central longitudinal axis and the apparatus is stretchable in a longitudinal direction generally aligned with the central longitudinal axis. The apparatus comprises a stretchable polymer body and at least one circuit line operatively connected to the stretchable polymer body. The circuit line extends in the longitudinal direction and has a longitudinal component that extends in the longitudinal direction and has an offset component that is at an angle to the longitudinal direction. The longitudinal component and the offset component allow the apparatus to stretch in the longitudinal direction while maintaining the integrity of the circuit line.

Direct patterning of highly-conductive graphene@copper composites using copper naphthenate as a resist for graphene device applications.

PubMed

Bi, Kaixi; Xiang, Quan; Chen, Yiqin; Shi, Huimin; Li, Zhiqin; Lin, Jun; Zhang, Yongzhe; Wan, Qiang; Zhang, Guanhua; Qin, Shiqiao; Zhang, Xueao; Duan, Huigao

2017-11-09

We report an electron-beam lithography process to directly fabricate graphene@copper composite patterns without involving metal deposition, lift-off and etching processes using copper naphthenate as a high-resolution negative-tone resist. As a commonly used industrial painting product, copper naphthenate is extremely cheap with a long shelf time but demonstrates an unexpected patterning resolution better than 10 nm. With appropriate annealing under a hydrogen atmosphere, the produced graphene@copper composite patterns show high conductivity of ∼400 S cm -1 . X-ray diffraction, conformal Raman spectroscopy and X-ray photoelectron spectroscopy were used to analyze the chemical composition of the final patterns. With the properties of high resolution and high conductivity, the patterned graphene@copper composites could be used as conductive pads and interconnects for graphene electronic devices with ohmic contacts. Compared to common fabrication processes involving metal evaporation and lift-off steps, this pattern-transfer-free fabrication process using copper naphthenate resist is direct and simple but allows comparable device performance in practical device applications.

Nanoscale patterning of electronic devices at the amorphous LaAlO3/SrTiO3 oxide interface using an electron sensitive polymer mask

NASA Astrophysics Data System (ADS)

Bjørlig, Anders V.; von Soosten, Merlin; Erlandsen, Ricci; Dahm, Rasmus Tindal; Zhang, Yu; Gan, Yulin; Chen, Yunzhong; Pryds, Nini; Jespersen, Thomas S.

2018-04-01

A simple approach is presented for designing complex oxide mesoscopic electronic devices based on the conducting interfaces of room temperature grown LaAlO3/SrTiO3 heterostructures. The technique is based entirely on methods known from conventional semiconductor processing technology, and we demonstrate a lateral resolution of ˜100 nm. We study the low temperature transport properties of nanoscale wires and demonstrate the feasibility of the technique for defining in-plane gates allowing local control of the electrostatic environment in mesoscopic devices.

Origin of n-type conductivity in two-dimensional InSe: In atoms from surface adsorption and van der Waals gap

NASA Astrophysics Data System (ADS)

Wang, Hui; Shi, Jun-jie; Huang, Pu; Ding, Yi-min; Wu, Meng; Cen, Yu-lang; Yu, Tongjun

2018-04-01

Recently, two-dimensional (2D) InSe nanosheet becomes a promising material for electronic and optoelectronic nano-devices due to its excellent electron transport, wide bandgap tunability and good metal contact. The inevitable native point defects are essential in determining its characteristics and device performance. Here we investigate the defect formation energy and thermodynamic transition levels for the most important native defects and clarify the physical origin of n-type conductivity in unintentionally doped 2D InSe by using the powerful first-principles calculations. We find that both surface In adatom and Se vacancy are the key defects, and the In adatom, donated 0.65 electrons to the host, causes the n-type conductivity in monolayer InSe under In-rich conditions. For bilayer or few-layer InSe, the In interstitial within the van der Waals gap, transferred 0.68 electrons to InSe, is found to be the most stable donor defect, which dominates the n-type character. Our results are significant for understanding the defect nature of 2D InSe and improving the related nano-device performance.

Effects of Thermal Resistance on One-Dimensional Thermal Analysis of the Epidermal Flexible Electronic Devices Integrated with Human Skin

NASA Astrophysics Data System (ADS)

Li, He; Cui, Yun

2017-12-01

Nowadays, flexible electronic devices are increasingly used in direct contact with human skin to monitor the real-time health of human body. Based on the Fourier heat conduction equation and Pennes bio-heat transfer equation, this paper deduces the analytical solutions of one - dimensional heat transfer for flexible electronic devices integrated with human skin under the condition of a constant power. The influence of contact thermal resistance between devices and skin is considered as well. The corresponding finite element model is established to verify the correctness of analytical solutions. The results show that the finite element analysis agrees well with the analytical solution. With bigger thermal resistance, temperature increase of skin surface will decrease. This result can provide guidance for the design of flexible electronic devices to reduce the negative impact that exceeding temperature leave on human skin.

Method for fabricating solar cells having integrated collector grids

NASA Technical Reports Server (NTRS)

Evans, J. C., Jr. (Inventor)

1979-01-01

A heterojunction or Schottky barrier photovoltaic device comprising a conductive base metal layer compatible with and coating predominately the exposed surface of the p-type substrate of the device such that a back surface field region is formed at the interface between the device and the base metal layer, a transparent, conductive mixed metal oxide layer in integral contact with the n-type layer of the heterojunction or Schottky barrier device having a metal alloy grid network of the same metal elements of the oxide constituents of the mixed metal oxide layer embedded in the mixed metal oxide layer, an insulating layer which prevents electrical contact between the conductive metal base layer and the transparent, conductive metal oxide layer, and a metal contact means covering the insulating layer and in intimate contact with the metal grid network embedded in the transparent, conductive oxide layer for conducting electrons generated by the photovoltaic process from the device.

Wearable Fall Detector using Integrated Sensors and Energy Devices

PubMed Central

Jung, Sungmook; Hong, Seungki; Kim, Jaemin; Lee, Sangkyu; Hyeon, Taeghwan; Lee, Minbaek; Kim, Dae-Hyeong

2015-01-01

Wearable devices have attracted great attentions as next-generation electronic devices. For the comfortable, portable, and easy-to-use system platform in wearable electronics, a key requirement is to replace conventional bulky and rigid energy devices into thin and deformable ones accompanying the capability of long-term energy supply. Here, we demonstrate a wearable fall detection system composed of a wristband-type deformable triboelectric generator and lithium ion battery in conjunction with integrated sensors, controllers, and wireless units. A stretchable conductive nylon is used as electrodes of the triboelectric generator and the interconnection between battery cells. Ethoxylated polyethylenimine, coated on the surface of the conductive nylon electrode, tunes the work function of a triboelectric generator and maximizes its performance. The electrical energy harvested from the triboelectric generator through human body motions continuously recharges the stretchable battery and prolongs hours of its use. The integrated energy supply system runs the 3-axis accelerometer and related electronics that record human body motions and send the data wirelessly. Upon the unexpected fall occurring, a custom-made software discriminates the fall signal and an emergency alert is immediately sent to an external mobile device. This wearable fall detection system would provide new opportunities in the mobile electronics and wearable healthcare. PMID:26597423

Enhancing the performance of tungsten doped InZnO thin film transistors via sequential ambient annealing

NASA Astrophysics Data System (ADS)

Park, Hyun-Woo; Song, Aeran; Kwon, Sera; Choi, Dukhyun; Kim, Younghak; Jun, Byung-Hyuk; Kim, Han-Ki; Chung, Kwun-Bum

2018-03-01

This study suggests a sequential ambient annealing process as an excellent post-treatment method to enhance the device performance and stability of W (tungsten) doped InZnO thin film transistors (WIZO-TFTs). Sequential ambient annealing at 250 °C significantly enhanced the device performance and stability of WIZO-TFTs, compared with other post-treatment methods, such as air ambient annealing and vacuum ambient annealing at 250 °C. To understand the enhanced device performance and stability of WIZO-TFT with sequential ambient annealing, we investigate the correlations between device performance and stability and electronic structures, such as band alignment, a feature of the conduction band, and band edge states below the conduction band. The enhanced performance of WIZO-TFTs with sequential ambient annealing is related to the modification of the electronic structure. In addition, the dominant mechanism responsible for the enhanced device performance and stability of WIZO-TFTs is considered to be a change in the shallow-level and deep-level band edge states below the conduction band.

Optimizing the design of nanostructures for improved thermal conduction within confined spaces

PubMed Central

2011-01-01

Maintaining constant temperature is of particular importance to the normal operation of electronic devices. Aiming at the question, this paper proposes an optimum design of nanostructures made of high thermal conductive nanomaterials to provide outstanding heat dissipation from the confined interior (possibly nanosized) to the micro-spaces of electronic devices. The design incorporates a carbon nanocone for conducting heat from the interior to the exterior of a miniature electronic device, with the optimum diameter, D0, of the nanocone satisfying the relationship: D02(x) ∝ x1/2 where x is the position along the length direction of the carbon nanocone. Branched structure made of single-walled carbon nanotubes (CNTs) are shown to be particularly suitable for the purpose. It was found that the total thermal resistance of a branched structure reaches a minimum when the diameter ratio, β* satisfies the relationship: β* = γ-0.25bN-1/k*, where γ is ratio of length, b = 0.3 to approximately 0.4 on the single-walled CNTs, b = 0.6 to approximately 0.8 on the multiwalled CNTs, k* = 2 and N is the bifurcation number (N = 2, 3, 4 ...). The findings of this research provide a blueprint in designing miniaturized electronic devices with outstanding heat dissipation. PACS numbers: 44.10.+i, 44.05.+e, 66.70.-f, 61.48.De PMID:21711953

Calculation of the figure of merit for carbon nanotubes based devices

NASA Astrophysics Data System (ADS)

Vaseashta, Ashok

2004-03-01

The dimensionality of a system has a profound influence on its physical behavior. With advances in technology over the past few decades, it has become possible to fabricate and study reduced-dimensional systems in which electrons are strongly confined in one or more dimensions. In the case of 1-D electron systems, most of the results, such as conductance quantization, have been explained in terms of non-interacting electrons. In contrast to the cases of 2D and 3D systems, the question of what roles electron-electron interactions play in real 1-D systems has been difficult to address, because of the difficulty in obtaining long, relatively disorder free 1-D wires. Since their first discovery and fabrication in 1991, carbon nanotubes (CNTs) have received considerable attention because of the prospect of new fundamental science and many potential applications. Hence, it has been possible to conduct studies of the electrons in 1-D. Carbon nanotubes are of considerable technological importance due to their excellent mechanical, electrical, and chemical characteristics. The potential technological applications include electronics, opto-electronics and biomedical sensors. The applications of carbon nanotubes include quantum wire interconnects, diodes and transistors for computing, capacitors, data storage devices, field emitters, flat panel displays and terahertz oscillators. One of the most remarkable characteristics is the possibility of bandgap engineering by controlling the microstructure. Hence, a pentagon-heptagon defect in the hexagonal network can connect a metallic to a semiconductor nanotube, providing an Angstrom-scale hetero-junction with a device density approximately 10^4 times greater than present day microelectronics. Also, successfully contacted carbon nanotubes have exhibited a large number of useful quantum electronic and low dimensional transport phenomena, such as true quantum wire behaviors, room temperature field effect transistors, room temperature single electron transistors, Luttinger-liquid behavior, the Aharonov Bohm effect, and Fabry-Perot interference effects. Hence it is evident that CNT can be used for a variety of applications. To use CNT based devices, it is critical to know the relative advantage of using CNTs over other known electronic materials. The figure of merit for CNT based devices is not reported so far. It is the objective of this investigation to calculate the figure of merit and present such results. Such calculations will enable researchers to focus their research for specific device designs where CNT based devices show a marked improvement over conventional semiconductor devices.

The effect of impurities and incident angle on the secondary electron emission of Ni(110)

NASA Astrophysics Data System (ADS)

Lazar, Hadar; Patino, Marlene; Raitses, Yevgeny; Koel, Bruce E.; Gentile, Charles; Feibush, Eliot

2015-11-01

The investigation of secondary electron emission (SEE) of conducting materials used for magnetic fusion devices and plasma thrusters is important for determining device lifetime and performance. Methods to quantify the secondary electron emission from conducting materials and to characterize the effects that impurities and incident angles have on secondary electron emission were developed using 4-grid low energy electron diffraction (LEED) optics. The total secondary electron yield from a Ni(110) surface was continuously measured from the sample current as surface contamination increased from reactions with background gases in the ultrahigh vacuum chamber. Auger electron spectroscopy (AES) and temperature programmed desorption (TPD) were used to examine the composition and impurity levels on the Ni(110) surface. The total secondary electron yield was also measured at different incident angles. Thank you to the Princeton Plasma Physics Laboratory and the Department of Energy for the opportunity to work on this project through the Science Undergraduate Laboratory Internships.

The effects of impurities and incidence angle on the secondary electron emission of Ni(110)

NASA Astrophysics Data System (ADS)

Lazar, Hadar; Patino, Marlene; Raitses, Yevgeny; Koel, Bruce; Gentile, Charles; Feibush, Eliot

The investigation of secondary electron emission (SEE) of conducting materials used for magnetic fusion devices and plasma thrusters is important for determining device lifetime and performance. Methods to quantify the secondary electron emission from conducting materials and to characterize the effects that impurities and incidence angles have on secondary electron emission were developed using 4-grid low energy electron diffraction (LEED) optics. The total secondary electron yield from a Ni(110) surface was continuously measured from the sample current as surface contamination increased from reactions with background gases in the ultrahigh vacuum chamber. Auger electron spectroscopy (AES) and temperature programmed desorption (TPD) were used to examine the composition and impurity levels on the Ni(110) surface. The total secondary electron yield was also measured at different incidence angles. Thank you to the Princeton Plasma Physics Laboratory (PPPL) and the Department of Energy (DOE) for the opportunity to work on this project through the Science Undergraduate Laboratory Internships (SULI).

Redox active polymer devices and methods of using and manufacturing the same

DOEpatents

Johnson, Paul; Bautista-Martinez, Jose Antonio; Friesen, Cody; Switzer, Elise

2018-06-05

The disclosed technology relates generally to apparatus comprising conductive polymers and more particularly to tag and tag devices comprising a redox-active polymer film, and method of using and manufacturing the same. In one aspect, an apparatus includes a substrate and a conductive structure formed on the substrate which includes a layer of redox-active polymer film having mobile ions and electrons. The conductive structure further includes a first terminal and a second terminal configured to receive an electrical signal therebetween, where the layer of redox-active polymer is configured to conduct an electrical current generated by the mobile ions and the electrons in response to the electrical signal. The apparatus additionally includes a detection circuit operatively coupled to the conductive structure and configured to detect the electrical current flowing through the conductive structure.

Electrical Conductance Tuning and Bistable Switching in Poly(N-vinylcarbazole)-Carbon Nanotube Composite Films.

PubMed

Liu, Gang; Ling, Qi-Dan; Teo, Eric Yeow Hwee; Zhu, Chun-Xiang; Chan, D Siu-Hung; Neoh, Koon-Gee; Kang, En-Tang

2009-07-28

By varying the carbon nanotube (CNT) content in poly(N-vinylcarbazole) (PVK) composite thin films, the electrical conductance behavior of an indium-tin oxide/PVK-CNT/aluminum (ITO/PVK-CNT/Al) sandwich structure can be tuned in a controlled manner. Distinctly different electrical conductance behaviors, such as (i) insulator behavior, (ii) bistable electrical conductance switching effects (write-once read-many-times (WORM) memory effect and rewritable memory effect), and (iii) conductor behavior, are discernible from the current density-voltage characteristics of the composite films. The turn-on voltage of the two bistable conductance switching devices decreases and the ON/OFF state current ratio of the WORM device increases with the increase in CNT content of the composite film. Both the WORM and rewritable devices are stable under a constant voltage stress or a continuous pulse voltage stress, with an ON/OFF state current ratio in excess of 10(3). The conductance switching effects of the composite films have been attributed to electron trapping in the CNTs of the electron-donating/hole-transporting PVK matrix.

Development and applications of transparent conductive nanocellulose paper

PubMed Central

Li, Shaohui; Lee, Pooi See

2017-01-01

Abstract Increasing attention has been paid to the next generation of ‘green’ electronic devices based on renewable nanocellulose, owing to its low roughness, good thermal stability and excellent optical properties. Various proof-of-concept transparent nanopaper-based electronic devices have been fabricated; these devices exhibit excellent flexibility, bendability and even foldability. In this review, we summarize the recent progress of transparent nanopaper that uses different types of nanocellulose, including pure nanocellulose paper and composite nanocellulose paper. The latest development of transparent and flexible nanopaper electronic devices are illustrated, such as electrochromic devices, touch sensors, solar cells and transistors. Finally, we discuss the advantages of transparent nanopaper compared to conventional flexible plastic substrate and the existing challenges to be tackled in order to realize this promising potential. PMID:28970870

Enhanced electron injection into inverted polymer light-emitting diodes by combined solution-processed zinc oxide/polyethylenimine interlayers.

PubMed

Höfle, Stefan; Schienle, Alexander; Bruns, Michael; Lemmer, Uli; Colsmann, Alexander

2014-05-01

Inverted device architectures for organic light-emitting diodes (OLEDs) require suitable interfaces or buffer layers to enhance electron injection from highwork-function transparent electrodes. A solution-processable combination of ZnO and PEI is reported, that facilitates electron injection and enables efficient and air-stable inverted devices. Replacing the metal anode by highly conductive polymers enables transparent OLEDs. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Organimetallic Fluorescent Complex Polymers For Light Emitting Applications

DOEpatents

Shi, Song Q.; So, Franky

1997-10-28

A fluorescent complex polymer with fluorescent organometallic complexes connected by organic chain spacers is utilized in the fabrication of light emitting devices on a substantially transparent planar substrate by depositing a first conductive layer having p-type conductivity on the planar surface of the substrate, depositing a layer of a hole transporting and electron blocking material on the first conductive layer, depositing a layer of the fluorescent complex polymer on the layer of hole transporting and electron blocking material as an electron transporting emissive layer and depositing a second conductive layer having n-type conductivity on the layer of fluorescent complex polymer.

An AlGaN/GaN high-electron-mobility transistor with an AlN sub-buffer layer

NASA Astrophysics Data System (ADS)

Shealy, J. R.; Kaper, V.; Tilak, V.; Prunty, T.; Smart, J. A.; Green, B.; Eastman, L. F.

2002-04-01

The AlGaN/GaN high-electron-mobility transistor requires a thermally conducting, semi-insulating substrate to achieve the best possible microwave performance. The semi-insulating SiC substrate is currently the best choice for this device technology; however, fringing fields which penetrate the GaN buffer layer at pinch-off introduce significant substrate conduction at modest drain bias if channel electrons are not well confined to the nitride structure. The addition of an insulating AlN sub-buffer on the semi-insulating SiC substrate suppresses this parasitic conduction, which results in dramatic improvements in the AlGaN/GaN transistor performance. A pronounced reduction in both the gate-lag and the gate-leakage current are observed for structures with the AlN sub-buffer layer. These structures operate up to 50 V drain bias under drive, corresponding to a peak voltage of 80 V, for a 0.30 µm gate length device. The devices have achieved high-efficiency operation at 10 GHz (>70% power-added efficiency in class AB mode at 15 V drain bias) and the highest output power density observed thus far (11.2 W mm-1). Large-periphery devices (1.5 mm gate width) deliver 10 W (continuous wave) of maximum saturated output power at 10 GHz. The growth, processing, and performance of these devices are briefly reviewed.

Photonics: Technology project summary

NASA Technical Reports Server (NTRS)

Depaula, Ramon P.

1991-01-01

Photonics involves the use of light (photons) in conjunction with electronics for applications in communications, computing, control, and sensing. Components used in photonic systems include lasers, optical detectors, optical wave guide devices, fiber optics, and traditional electronic devices. The goal of this program is to develop hybrid optoelectronic devices and systems for sensing, information processing, communications, and control. It is hoped that these new devices will yield at least an order of magnitude improvement in performance over existing technology. The objective of the program is to conduct research and development in the following areas: (1) materials and devices; (2) networking and computing; (3) optical processing/advanced pattern recognition; and (4) sensing.

CarbAl Heat Transfer Material

NASA Technical Reports Server (NTRS)

Fink, Richard

2015-01-01

The increasing use of power electronics, such as high-current semiconductor devices and modules, within space vehicles is driving the need to develop specialty thermal management materials in both the packaging of these discrete devices and the packaging of modules consisting of these device arrays. Developed by Applied Nanotech, Inc. (ANI), CarbAl heat transfer material is uniquely characterized by its low density, high thermal diffusivity, and high thermal conductivity. Its coefficient of thermal expansion (CTE) is similar to most power electronic materials, making it an effective base plate substrate for state-of-the-art silicon carbide (SiC) super junction transistors. The material currently is being used to optimize hybrid vehicle inverter packaging. Adapting CarbAl-based substrates to space applications was a major focus of the SBIR project work. In Phase I, ANI completed modeling and experimentation to validate its deployment in a space environment. Key parameters related to cryogenic temperature scaling of CTE, thermal conductivity, and mechanical strength. In Phase II, the company concentrated on improving heat sinks and thermally conductive circuit boards for power electronic applications.

Optimizing the thermoelectric performance of graphene nano-ribbons without degrading the electronic properties.

PubMed

Tran, Van-Truong; Saint-Martin, Jérôme; Dollfus, Philippe; Volz, Sebastian

2017-05-24

The enhancement of thermoelectric figure of merit ZT requires to either increase the power factor or reduce the phonon conductance, or even both. In graphene, the high phonon thermal conductivity is the main factor limiting the thermoelectric conversion. The common strategy to enhance ZT is therefore to introduce phonon scatterers to suppress the phonon conductance while retaining high electrical conductance and Seebeck coefficient. Although thermoelectric performance is eventually enhanced, all studies based on this strategy show a significant reduction of the electrical conductance. In this study we demonstrate that appropriate sources of disorder, including isotopes and vacancies at lowest electron density positions, can be used as phonon scatterers to reduce the phonon conductance in graphene ribbons without degrading the electrical conductance, particularly in the low-energy region which is the most important range for device operation. By means of atomistic calculations we show that the natural electronic properties of graphene ribbons can be fully preserved while their thermoelectric efficiency is strongly enhanced. For ribbons of width M = 5 dimer lines, room-temperature ZT is enhanced from less than 0.26 to more than 2.5. This study is likely to set the milestones of a new generation of nano-devices with dual electronic/thermoelectric functionalities.

Mechanistic analysis of temperature-dependent current conduction through thin tunnel oxide in n+-polySi/SiO2/n+-Si structures

NASA Astrophysics Data System (ADS)

Samanta, Piyas

2017-09-01

We present a detailed investigation on temperature-dependent current conduction through thin tunnel oxides grown on degenerately doped n-type silicon (n+-Si) under positive bias ( VG ) on heavily doped n-type polycrystalline silicon (n+-polySi) gate in metal-oxide-semiconductor devices. The leakage current measured between 298 and 573 K and at oxide fields ranging from 6 to 10 MV/cm is primarily attributed to Poole-Frenkel (PF) emission of trapped electrons from the neutral electron traps located in the silicon dioxide (SiO2) band gap in addition to Fowler-Nordheim (FN) tunneling of electrons from n+-Si acting as the drain node in FLOating gate Tunnel OXide Electrically Erasable Programmable Read-Only Memory devices. Process-induced neutral electron traps are located at 0.18 eV and 0.9 eV below the SiO2 conduction band. Throughout the temperature range studied here, PF emission current IPF dominates FN electron tunneling current IFN at oxide electric fields Eox between 6 and 10 MV/cm. A physics based new analytical formula has been developed for FN tunneling of electrons from the accumulation layer of degenerate semiconductors at a wide range of temperatures incorporating the image force barrier rounding effect. FN tunneling has been formulated in the framework of Wentzel-Kramers-Brilloiun taking into account the correction factor due to abrupt variation of the energy barrier at the cathode/oxide interface. The effect of interfacial and near-interfacial trapped-oxide charges on FN tunneling has also been investigated in detail at positive VG . The mechanism of leakage current conduction through SiO2 films plays a crucial role in simulation of time-dependent dielectric breakdown of the memory devices and to precisely predict the normal operating field or applied floating gate (FG) voltage for lifetime projection of the devices. In addition, we present theoretical results showing the effect of drain doping concentration on the FG leakage current.

Proton conducting membrane using a solid acid

NASA Technical Reports Server (NTRS)

Haile, Sossina M. (Inventor); Chisholm, Calum (Inventor); Boysen, Dane (Inventor); Narayanan, Sekharipuram R. (Inventor)

2002-01-01

A solid acid material is used as a proton conducting membrane in an electrochemical device. The solid acid material can be one of a plurality of different kinds of materials. A binder can be added, and that binder can be either a nonconducting or a conducting binder. Nonconducting binders can be, for example, a polymer or a glass. A conducting binder enables the device to be both proton conducting and electron conducting. The solid acid material has the general form M.sub.a H.sub.b (XO.sub.t).sub.c.

Recent advances in flexible and wearable organic optoelectronic devices

NASA Astrophysics Data System (ADS)

Zhu, Hong; Shen, Yang; Li, Yanqing; Tang, Jianxin

2018-01-01

Flexible and wearable optoelectronic devices have been developing to a new stage due to their unique capacity for the possibility of a variety of wearable intelligent electronics, including bendable smartphones, foldable touch screens and antennas, paper-like displays, and curved and flexible solid-state lighting devices. Before extensive commercial applications, some issues still have to be solved for flexible and wearable optoelectronic devices. In this regard, this review concludes the newly emerging flexible substrate materials, transparent conductive electrodes, device architectures and light manipulation methods. Examples of these components applied for various kinds of devices are also summarized. Finally, perspectives about the bright future of flexible and wearable electronic devices are proposed. Project supported by the Ministry of Science and Technology of China (No. 2016YFB0400700).

Development of a flexible and bendable vibrotactile actuator based on wave-shaped poly(vinyl chloride)/acetyl tributyl citrate gels for wearable electronic devices

NASA Astrophysics Data System (ADS)

Park, Won-Hyeong; Bae, Jin Woo; Shin, Eun-Jae; Kim, Sang-Youn

2016-11-01

The paradigm of consumer electronic devices is being shifted from rigid hand-held devices to flexible/wearable devices in search of benefits such as enhanced usability and portability, excellent wear characteristics, and more functions in less space. However, the fundamental incompatibility of flexible/wearable devices and a rigid actuator brought forth a new issue obstructing commercialization of flexible/wearable devices. In this paper, we propose a new wave-shaped eco-friendly PVC gel, and a new flexible and bendable vibrotactile actuator that could easily be applied to wearable electronic devices. We explain the vibration mechanism of the proposed vibrotactile actuator and investigate its influence on the content of plasticizer for the performance of the proposed actuator. An experiment for measuring vibrational amplitude was conducted over a wide frequency range. The experiment clearly showed that the proposed vibrotactile actuator could create a variety of haptic sensations in wearable devices.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moreno, Gilbert

The objective for this project is to develop thermal management strategies to enable efficient and high-temperature wide-bandgap (WBG)-based power electronic systems (e.g., emerging inverter and DC-DC converter). Device- and system-level thermal analyses are conducted to determine the thermal limitations of current automotive power modules under elevated device temperature conditions. Additionally, novel cooling concepts and material selection will be evaluated to enable high-temperature silicon and WBG devices in power electronics components. WBG devices (silicon carbide [SiC], gallium nitride [GaN]) promise to increase efficiency, but will be driven as hard as possible. This creates challenges for thermal management and reliability.

Metal current collect protected by oxide film

DOEpatents

Jacobson, Craig P.; Visco, Steven J.; DeJonghe, Lutgard C.

2004-05-25

Provided are low-cost, mechanically strong, highly electronically conductive current collects and associated structures for solid-state electrochemical devices, techniques for forming these structures, and devices incorporating the structures. The invention provides solid state electrochemical devices having as current interconnects a ferritic steel felt or screen coated with a protective oxide film.

Electronic interconnects and devices with topological surface states and methods for fabricating same

DOEpatents

Yazdani, Ali; Ong, N. Phuan; Cava, Robert J.

2017-04-04

An interconnect is disclosed with enhanced immunity of electrical conductivity to defects. The interconnect includes a material with charge carriers having topological surface states. Also disclosed is a method for fabricating such interconnects. Also disclosed is an integrated circuit including such interconnects. Also disclosed is a gated electronic device including a material with charge carriers having topological surface states.

Electronic interconnects and devices with topological surface states and methods for fabricating same

DOEpatents

Yazdani, Ali; Ong, N. Phuan; Cava, Robert J.

2016-05-03

An interconnect is disclosed with enhanced immunity of electrical conductivity to defects. The interconnect includes a material with charge carriers having topological surface states. Also disclosed is a method for fabricating such interconnects. Also disclosed is an integrated circuit including such interconnects. Also disclosed is a gated electronic device including a material with charge carriers having topological surface states.

Electrical conduction at domain walls in multiferroic BiFeO3

NASA Astrophysics Data System (ADS)

Seidel, Jan; Martin, Lane; He, Qing; Zhan, Qian; Chu, Ying-Hao; Rother, Axel; Hawkridge, Michael; Maksymovych, Peter; Yu, Pu; Gajek, Martin; Balke, Nina; Kalinin, Sergei; Gemming, Sybille; Wang, Feng; Catalán, Gustau; Scott, James; Spaldin, Nicola; Orenstein, Joseph; Ramesh, Ramamoorthy

2009-03-01

We report the observation of room temperature electronic conductivity at ferroelectric domain walls in BiFeO3. The origin and nature of the observed conductivity is probed using a combination of conductive atomic force microscopy, high resolution transmission electron microscopy and first-principles density functional computations. We show that a structurally driven change in both the electrostatic potential and local electronic structure (i.e., a decrease in band gap) at the domain wall leads to the observed electrical conductivity. We estimate the conductivity in the wall to be several orders of magnitude higher than for the bulk material. Additionally we demonstrate the potential for device applications of such conducting nanoscale features.

Organic small molecule semiconducting chromophores for use in organic electronic devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Welch, Gregory C.; Hoven, Corey V.; Nguyen, Thuc-Quyen

Small organic molecule semi-conducting chromophores containing a pyridalthiadiazole, pyridaloxadiazole, or pyridaltriazole core structure are disclosed. Such compounds can be used in organic heterojunction devices, such as organic small molecule solar cells and transistors.

Multicolor and near-infrared electroluminescence from the light-emitting devices with rare-earth doped TiO{sub 2} films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhu, Chen; Gao, Zhifei; Wang, Canxing

2015-09-28

We report on multicolor and near-infrared electroluminescence (EL) from the devices using rare-earth doped TiO{sub 2} (TiO{sub 2}:RE) films as light-emitting layers, which are ascribed to the impact excitation of RE{sup 3+} ions, with the EL onset voltages below 10 V. The devices are in the structure of ITO/TiO{sub 2}:RE/SiO{sub 2}/Si, in which the SiO{sub 2} layer is ∼10 nm thick and RE includes Eu, Er, Tm, Nd, and so on. With sufficiently high positive voltage applied on the ITO electrode, the conduction electrons in Si can tunnel into the conduction band of SiO{sub 2} layer via the trap-assisted tunneling mechanism, gainingmore » the potential energy ∼4 eV higher than the conduction band edge of TiO{sub 2}. Therefore, as the electrons in the SiO{sub 2} layer drift into the TiO{sub 2}:RE layer, they become hot electrons. Such hot electrons impact-excite the RE{sup 3+} ions incorporated into the TiO{sub 2} host, leading to the characteristic emissions.« less

Circuit with a Switch for Charging a Battery in a Battery Capacitor Circuit

NASA Technical Reports Server (NTRS)

Stuart, Thomas A. (Inventor); Ashtiani, Cyrus N. (Inventor)

2008-01-01

A circuit for charging a battery combined with a capacitor includes a power supply adapted to be connected to the capacitor, and the battery. The circuit includes an electronic switch connected to the power supply. The electronic switch is responsive to switch between a conducting state to allow current and a non-conducting state to prevent current flow. The circuit includes a control device connected to the switch and is operable to generate a control signal to continuously switch the electronic switch between the conducting and non-conducting states to charge the battery.

Realization of the Switching Mechanism in Resistance Random Access Memory™ Devices: Structural and Electronic Properties Affecting Electron Conductivity in a Hafnium Oxide-Electrode System Through First-Principles Calculations

NASA Astrophysics Data System (ADS)

Aspera, Susan Meñez; Kasai, Hideaki; Kishi, Hirofumi; Awaya, Nobuyoshi; Ohnishi, Shigeo; Tamai, Yukio

2013-01-01

The resistance random access memory (RRAM™) device, with its electrically induced nanoscale resistive switching capacity, has attracted considerable attention as a future nonvolatile memory device. Here, we propose a mechanism of switching based on an oxygen vacancy migration-driven change in the electronic properties of the transition-metal oxide film stimulated by set pulse voltages. We used density functional theory-based calculations to account for the effect of oxygen vacancies and their migration on the electronic properties of HfO2 and Ta/HfO2 systems, thereby providing a complete explanation of the RRAM™ switching mechanism. Furthermore, computational results on the activation energy barrier for oxygen vacancy migration were found to be consistent with the set and reset pulse voltage obtained from experiments. Understanding this mechanism will be beneficial to effectively realizing the materials design in these devices.

Gallium Arsenide Monolithic Optoelectronic Circuits

NASA Astrophysics Data System (ADS)

Bar-Chaim, N.; Katz, J.; Margalit, S.; Ury, I.; Wilt, D.; Yariv, A.

1981-07-01

The optical properties of GaAs make it a very useful material for the fabrication of optical emitters and detectors. GaAs also possesses electronic properties which allow the fabrication of high speed electronic devices which are superior to conventional silicon devices. Monolithic optoelectronic circuits are formed by the integration of optical and electronic devices on a single GaAs substrate. Integration of many devices is most easily accomplished on a semi-insulating (SI) sub-strate. Several laser structures have been fabricated on SI GaAs substrates. Some of these lasers have been integrated with Gunn diodes and with metal semiconductor field effect transistors (MESFETs). An integrated optical repeater has been demonstrated in which MESFETs are used for optical detection and electronic amplification, and a laser is used to regenerate the optical signal. Monolithic optoelectronic circuits have also been constructed on conducting substrates. A heterojunction bipolar transistor driver has been integrated with a laser on an n-type GaAs substrate.

An investigation into the feasibility of myoglobin-based single-electron transistors

PubMed Central

Li, Debin; Gannett, Peter M.; Lederman, David

2016-01-01

Myoglobin single-electron transistors were investigated using nanometer-gap platinum electrodes fabricated by electromigration at cryogenic temperatures. Apomyoglobin (myoglobin without heme group) was used as a reference. The results suggest single electron transport is mediated by resonant tunneling with the electronic and vibrational levels of the heme group in a single protein. They also represent a proof-of-principle that proteins with redox centers across nanometer-gap electrodes can be utilized to fabricate single-electron transistors. The protein orientation and conformation may significantly affect the conductance of these devices. Future improvements in device reproducibility and yield will require control of these factors. PMID:22972432

Non-ambipolar radio-frequency plasma electron source and systems and methods for generating electron beams

DOEpatents

Hershkowitz, Noah [Madison, WI; Longmier, Benjamin [Madison, WI; Baalrud, Scott [Madison, WI

2009-03-03

An electron generating device extracts electrons, through an electron sheath, from plasma produced using RF fields. The electron sheath is located near a grounded ring at one end of a negatively biased conducting surface, which is normally a cylinder. Extracted electrons pass through the grounded ring in the presence of a steady state axial magnetic field. Sufficiently large magnetic fields and/or RF power into the plasma allow for helicon plasma generation. The ion loss area is sufficiently large compared to the electron loss area to allow for total non-ambipolar extraction of all electrons leaving the plasma. Voids in the negatively-biased conducting surface allow the time-varying magnetic fields provided by the antenna to inductively couple to the plasma within the conducting surface. The conducting surface acts as a Faraday shield, which reduces any time-varying electric fields from entering the conductive surface, i.e. blocks capacitive coupling between the antenna and the plasma.

Non-ambipolar radio-frequency plasma electron source and systems and methods for generating electron beams

NASA Technical Reports Server (NTRS)

Hershkowitz, Noah (Inventor); Longmier, Benjamin (Inventor); Baalrud, Scott (Inventor)

2011-01-01

An electron generating device extracts electrons, through an electron sheath, from plasma produced using RF fields. The electron sheath is located near a grounded ring at one end of a negatively biased conducting surface, which is normally a cylinder. Extracted electrons pass through the grounded ring in the presence of a steady state axial magnetic field. Sufficiently large magnetic fields and/or RF power into the plasma allow for helicon plasma generation. The ion loss area is sufficiently large compared to the electron loss area to allow for total non-ambipolar extraction of all electrons leaving the plasma. Voids in the negatively-biased conducting surface allow the time-varying magnetic fields provided by the antenna to inductively couple to the plasma within the conducting surface. The conducting surface acts as a Faraday shield, which reduces any time-varying electric fields from entering the conductive surface, i.e. blocks capacitive coupling between the antenna and the plasma.

Non-ambipolar radio-frequency plasma electron source and systems and methods for generating electron beams

NASA Technical Reports Server (NTRS)

Hershkowitz, Noah (Inventor); Longmier, Benjamin (Inventor); Baalrud, Scott (Inventor)

2009-01-01

An electron generating device extracts electrons, through an electron sheath, from plasma produced using RF fields. The electron sheath is located near a grounded ring at one end of a negatively biased conducting surface, which is normally a cylinder. Extracted electrons pass through the grounded ring in the presence of a steady state axial magnetic field. Sufficiently large magnetic fields and/or RF power into the plasma allow for helicon plasma generation. The ion loss area is sufficiently large compared to the electron loss area to allow for total non-ambipolar extraction of all electrons leaving the plasma. Voids in the negatively-biased conducting surface allow the time-varying magnetic fields provided by the antenna to inductively couple to the plasma within the conducting surface. The conducting surface acts as a Faraday shield, which reduces any time-varying electric fields from entering the conductive surface, i.e. blocks capacitive coupling between the antenna and the plasma.

Composite electrode/electrolyte structure

DOEpatents

Visco, Steven J.; Jacobson, Craig P.; DeJonghe, Lutgard C.

2004-01-27

Provided is an electrode fabricated from highly electronically conductive materials such as metals, metal alloys, or electronically conductive ceramics. The electronic conductivity of the electrode substrate is maximized. Onto this electrode in the green state, a green ionic (e.g., electrolyte) film is deposited and the assembly is co-fired at a temperature suitable to fully densify the film while the substrate retains porosity. Subsequently, a catalytic material is added to the electrode structure by infiltration of a metal salt and subsequent low temperature firing. The invention allows for an electrode with high electronic conductivity and sufficient catalytic activity to achieve high power density in ionic (electrochemical) devices such as fuel cells and electrolytic gas separation systems.

Hydrogen production by high-temperature water splitting using electron-conducting membranes

DOEpatents

Lee, Tae H.; Wang, Shuangyan; Dorris, Stephen E.; Balachandran, Uthamalingam

2004-04-27

A device and method for separating water into hydrogen and oxygen is disclosed. A first substantially gas impervious solid electron-conducting membrane for selectively passing hydrogen is provided and spaced from a second substantially gas impervious solid electron-conducting membrane for selectively passing oxygen. When steam is passed between the two membranes at disassociation temperatures the hydrogen from the disassociation of steam selectively and continuously passes through the first membrane and oxygen selectively and continuously passes through the second membrane, thereby continuously driving the disassociation of steam producing hydrogen and oxygen.

Introduction of Interfacial Charges to Black Phosphorus for a Family of Planar Devices

NASA Astrophysics Data System (ADS)

Bao, Lihong; Wang, Guocai; Du, Shixuan; Pantelides, Sokrates; Gao, Hong-Jun

As a young member in the family of two dimensional materials, black phosphorus (BP) has attracted great attention since its discovery due to its high hole mobility and a sizable and tunable bandgap, which meets the basic requirements for logic circuits applications. Naturally, for realization of complementary logic operation, the challenge lies in how to control the conduction type in BP FETs, i.e., the dominant carrier types, holes (p-type) or electrons (n-type). However, the absence of reliable substitutional doping techniques makes this task a great challenge. Introducing interfacial charges into 2D materials has been proven to be a successfulway to control conduction. In this work, we, for the first time, demonstrate that capping a thin BP layer with a layer of cross-linked PMMA can modify the conductivity type of the BP by a surface charge transfer process, converting a BP layer dominated by hole conduction in the absence of an external electric field (p-type) to one dominated by electron conduction (n-type). Combining BP films capped by cross-linked PMMA with standard BP, a familyof planar devices can be created, including BP gated diodes and bidirectional recitifiers (rectification ratio >102) and BP logic inverter (gain¡«0.75) which are capable of performing current rectification, switching, and signal inversion operations. The device performance demonstrated here suggests a promising route for developing 2D-based electronics.

Hybrid nanowire ion-to-electron transducers for integrated bioelectronic circuitry (Conference Presentation)

NASA Astrophysics Data System (ADS)

Carrad, Damon J.; Mostert, Bernard; Meredith, Paul; Micolich, Adam P.

2016-09-01

A key task in bioelectronics is the transduction between ionic/protonic signals and electronic signals at high fidelity. This is a considerable challenge since the two carrier types exhibit intrinsically different physics. We present our work on a new class of organic-inorganic transducing interface utilising semiconducting InAs and GaAs nanowires directly gated with a proton transporting hygroscopic polymer consisting of undoped polyethylene oxide (PEO) patterned to nanoscale dimensions by a newly developed electron-beam lithography process [1]. Remarkably, we find our undoped PEO polymer electrolyte gate dielectric [2] gives equivalent electrical performance to the more traditionally used LiClO4-doped PEO [3], with an ionic conductivity three orders of magnitude higher than previously reported for undoped PEO [4]. The observed behaviour is consistent with proton conduction in PEO. We attribute our undoped PEO-based devices' performance to the small external surface and high surface-to-volume ratio of both the nanowire conducting channel and patterned PEO dielectric in our devices, as well as the enhanced hydration afforded by device processing and atmospheric conditions. In addition to studying the basic transducing mechanisms, we also demonstrate high-fidelity ionic to electronic conversion of a.c. signals at frequencies up to 50 Hz. Moreover, by combining complementary n- and p-type transducers we demonstrate functional hybrid ionic-electronic circuits can achieve logic (NOT operation), and with some further engineering of the nanowire contacts, potentially also amplification. Our device structures have significant potential to be scaled towards realising integrated bioelectronic circuitry. [1] D.J. Carrad et al., Nano Letters 14, 94 (2014). [2] D.J. Carrad et al., Manuscript in preparation (2016). [3] S.H. Kim et al., Advanced Materials 25, 1822 (2013). [4] S.K. Fullerton-Shirey et al., Macromolecules 42, 2142 (2009).

Electronic cigarette devices and oro-facial trauma (Literature review)

NASA Astrophysics Data System (ADS)

Ghazali, A. F.; Ismail, A. F.; Daud, A.

2017-08-01

Detrimental effects of cigarette smoking have been well described and recognized globally. With recent advancement of technology, electronic cigarette has been introduced and gained its popularity and became a global trend, especially among young adults. However, the safety of the electronic devices remains debatable. This paper aimed to compile and review the reported cases of oro-facial trauma related to the usage of electronic cigarette devices. A literature search was conducted using PubMed/Medline in December 2016. The search terms used were a combination of “oral trauma”, “dental trauma”, “oral injury” and “electronic cigarette”. The search included all abstract published from the inception of the database until December 2016. Abstract that was written in English, case report, letter to editors, clinical and human studies were included for analysis. All selected abstract were searched for full articles. A total of 8 articles were included for review. All of the articles were published in 2016 with mostly case reports. The sample size of the studies ranged from 1 to 15 patients. Seven of the included articles are from United States of America and one from Mexico. Our review concluded that the use of electronic cigarette devices posed not only a safety concern but also that the devices were mostly unregulated. There should be a recognized authority body to regulate the safety and standard of the electronic devices.

Electron-hole collision limited transport in charge-neutral bilayer graphene

NASA Astrophysics Data System (ADS)

Nam, Youngwoo; Ki, Dong-Keun; Soler-Delgado, David; Morpurgo, Alberto F.

2017-12-01

Ballistic transport occurs whenever electrons propagate without collisions deflecting their trajectory. It is normally observed in conductors with a negligible concentration of impurities, at low temperature, to avoid electron-phonon scattering. Here, we use suspended bilayer graphene devices to reveal a new regime, in which ballistic transport is not limited by scattering with phonons or impurities, but by electron-hole collisions. The phenomenon manifests itself in a negative four-terminal resistance that becomes visible when the density of holes (electrons) is suppressed by gate-shifting the Fermi level in the conduction (valence) band, above the thermal energy. For smaller densities, transport is diffusive, and the measured conductivity is reproduced quantitatively, with no fitting parameters, by including electron-hole scattering as the only process causing velocity relaxation. Experiments on a trilayer device show that the phenomenon is robust and that transport at charge neutrality is governed by the same physics. Our results provide a textbook illustration of a transport regime that had not been observed previously and clarify the nature of conduction through charge-neutral graphene under conditions in which carrier density inhomogeneity is immaterial. They also demonstrate that transport can be limited by a fully electronic mechanism, originating from the same microscopic processes that govern the physics of Dirac-like plasmas.

Microfabricated thermoelectric power-generation devices

NASA Technical Reports Server (NTRS)

Fleurial, Jean-Pierre (Inventor); Phillips, Wayne (Inventor); Borshchevsky, Alex (Inventor); Kolawa, Elizabeth A. (Inventor); Ryan, Margaret A. (Inventor); Caillat, Thierry (Inventor); Mueller, Peter (Inventor); Snyder, G. Jeffrey (Inventor); Kascich, Thorsten (Inventor)

2002-01-01

A device for generating power to run an electronic component. The device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with a high temperature region. During operation, heat flows from the high temperature region into the heat-conducting substrate, from which the heat flows into the electrical power generator. A thermoelectric material (e.g., a BiTe alloy-based film or other thermoelectric material) is placed in thermal contact with the heat-conducting substrate. A low temperature region is located on the side of the thermoelectric material opposite that of the high temperature region. The thermal gradient generates electrical power and drives an electrical component.

Microfabricated thermoelectric power-generation devices

NASA Technical Reports Server (NTRS)

Fleurial, Jean-Pierre (Inventor); Ryan, Margaret A. (Inventor); Borshchevsky, Alex (Inventor); Phillips, Wayne (Inventor); Kolawa, Elizabeth A. (Inventor); Snyder, G. Jeffrey (Inventor); Caillat, Thierry (Inventor); Kascich, Thorsten (Inventor); Mueller, Peter (Inventor)

2004-01-01

A device for generating power to run an electronic component. The device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with a high temperature region. During operation, heat flows from the high temperature region into the heat-conducting substrate, from which the heat flows into the electrical power generator. A thermoelectric material (e.g., a BiTe alloy-based film or other thermoelectric material) is placed in thermal contact with the heat-conducting substrate. A low temperature region is located on the side of the thermoelectric material opposite that of the high temperature region. The thermal gradient generates electrical power and drives an electrical component.

Direct Observation of Conducting Filaments in Tungsten Oxide Based Transparent Resistive Switching Memory.

PubMed

Qian, Kai; Cai, Guofa; Nguyen, Viet Cuong; Chen, Tupei; Lee, Pooi See

2016-10-05

Transparent nonvolatile memory has great potential in integrated transparent electronics. Here, we present highly transparent resistive switching memory using stoichiometric WO 3 film produced by cathodic electrodeposition with indium tin oxide electrodes. The memory device demonstrates good optical transmittance, excellent operative uniformity, low operating voltages (+0.25 V/-0.42 V), and long retention time (>10 4 s). Conductive atomic force microscopy, ex situ transmission electron microscopy, and X-ray photoelectron spectroscopy experiments directly confirm that the resistive switching effects occur due to the electric field-induced formation and annihilation of the tungsten-rich conductive channel between two electrodes. Information on the physical and chemical nature of conductive filaments offers insightful design strategies for resistive switching memories with excellent performances. Moreover, we demonstrate the promising applicability of the cathodic electrodeposition method for future resistive memory devices.

Electronic and transport properties of Li-doped NiO epitaxial thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, J. Y.; Li, W. W.; Hoye, R. L. Z.

NiO is a p-type wide bandgap semiconductor of use in various electronic devices ranging from solar cells to transparent transistors. Understanding and improving its optical and transport properties have been of considerable interest. In this work, we have investigated the effect of Li doping on the electronic, optical and transport properties of NiO epitaxial thin films grown by pulsed laser deposition. We show that Li doping significantly increases the p-type conductivity of NiO, but all the films have relatively low room-temperature mobilities (<0.05 cm2 V -1s -1). The conduction mechanism is better described by small-polaron hoping model in the temperaturemore » range of 200 K < T <330 K, and variable range hopping at T <200 K. A combination of x-ray photoemission and O K-edge x-ray absorption spectroscopic investigations reveal that the Fermi level gradually shifts toward the valence band maximum (VBM) and a new hole state develops with Li doping. Both the VBM and hole states are composed of primarily Zhang-Rice bound states, which accounts for the small polaron character (low mobility) of hole conduction. Our work provides guidelines for the search for p-type oxide materials and device optimization.NiO is a p-type wide bandgap semiconductor of use in various electronic devices ranging from solar cells to transparent transistors. This work reports the controlling of conductivity and increase of work functions by Li doping.« less

Application of He ion microscopy for material analysis

NASA Astrophysics Data System (ADS)

Altmann, F.; Simon, M.; Klengel, R.

2009-05-01

Helium ion beam microscopy (HIM) is a new high resolution imaging technique. The use of Helium ions instead of electrons enables none destructive imaging combined with contrasts quite similar to that from Gallium ion beam imaging. The use of very low probe currents and the comfortable charge compensation using low energy electrons offer imaging of none conductive samples without conductive coating. An ongoing microelectronic sample with Gold/Aluminum interconnects and polymer electronic devices were chosen to evaluate HIM in comparison to scanning electron microscopy (SEM). The aim was to look for key applications of HIM in material analysis. Main focus was on complementary contrast mechanisms and imaging of none conductive samples.

Controlled chain polymerisation and chemical soldering for single-molecule electronics.

PubMed

Okawa, Yuji; Akai-Kasaya, Megumi; Kuwahara, Yuji; Mandal, Swapan K; Aono, Masakazu

2012-05-21

Single functional molecules offer great potential for the development of novel nanoelectronic devices with capabilities beyond today's silicon-based devices. To realise single-molecule electronics, the development of a viable method for connecting functional molecules to each other using single conductive polymer chains is required. The method of initiating chain polymerisation using the tip of a scanning tunnelling microscope (STM) is very useful for fabricating single conductive polymer chains at designated positions and thereby wiring single molecules. In this feature article, developments in the controlled chain polymerisation of diacetylene compounds and the properties of polydiacetylene chains are summarised. Recent studies of "chemical soldering", a technique enabling the covalent connection of single polydiacetylene chains to single functional molecules, are also introduced. This represents a key step in advancing the development of single-molecule electronics.

Photovoltaic devices having nanoparticle dipoles for enhanced performance and methods for making same

DOEpatents

Williams, George M [Portland, OR; Schut, David M [Philomath, OR; Stonas, Andreas [Albany, OR

2011-08-09

A photovoltaic device has nanoparticles sandwiched between a conductive substrate and a charge selective transport layer. Each of the nanoparticles has a ligand shell attached to the nanoparticle core. A first type of ligand is electron rich and attached to one hemisphere of the nanoparticle core, while a second type of ligand is electron poor and attached to an opposite hemisphere of the core. Consequently, the ligand shell induces an electric field within the nanoparticle, enhancing the photovoltaic effect. The arrangement of ligands types on different sides of the nanoparticle is obtained by a process involving ligand substitution after adhering the nanoparticles to the conductive substrate.

Mechanisms of transport and electron transfer at conductive polymer/liquid interfaces

NASA Astrophysics Data System (ADS)

Ratcliff, Erin

Organic semiconductors (OSCs) have incredible prospects for next-generation, flexible electronic devices including bioelectronics, thermoelectrics, opto-electronics, and energy storage and conversion devices. Yet many fundamental challenges still exist. First, solution processing prohibits definitive control over microstructure, which is fundamental for controlling electrical, ionic, and thermal transport properties. Second, OSCs generally suffer from poor electrical conductivities due to a combination of low carriers and low mobility. Third, polymeric semiconductors have potential-dependent, dynamically evolving electronic and chemical states, leading to complex interfacial charge transfer properties in contact with liquids. This talk will focus on the use of alternative synthetic strategies of oxidative chemical vapor deposition and electrochemical deposition to control physical, electronic, and chemical structure. We couple our synthetic efforts with energy-, time-, and spatially resolved spectroelectrochemical and microscopy techniques to understand the critical interfacial chemistry-microstructure-property relationships: first at the macroscale, and then moving towards the nanoscale. In particular, approaches to better understand electron transfer events at polymer/liquid interfaces as a function of: 1.) chemical composition; 2.) electronic density of states (DOS); and 3.) crystallinity and microstructure will be discussed.

Enhancement of Natural Convection by Carbon Nanotube Films Covered Microchannel-Surface for Passive Electronic Cooling Devices.

PubMed

Zhang, Guang; Jiang, Shaohui; Yao, Wei; Liu, Changhong

2016-11-16

Owing to the outstanding properties of thermal conduction, lightweight, and chemical durability, carbon nanotubes (CNTs) have revealed promising applications in thermal management materials. Meanwhile, the increasingly popular portable electronics and the rapid development of space technology need lighter weight, smaller size, and more effective thermal management devices. Here, a novel kind of heat dissipation devices based on the superaligned CNT films and underlying microchannels is proposed, and the heat dissipation properties are measured at the natural condition. Distinctive from previous studies, by combining the advantages of microchannels and CNTs, such a novel heat dissipation device enables superior natural convection heat transfer properties. Our findings prove that the novel CNT-based devices could show an 86.6% larger total natural heat dissipation properties than bare copper plate. Further calculations of the radiation and natural convection heat transfer properties demonstrate that the excellent passive cooling properties of these CNT-based devices are primarily caused by the reinforcement of the natural convection heat transfer properties. Furthermore, the heat dissipation mechanisms are briefly discussed, and we propose that the very high heat transfer coefficients and the porous structures of superaligned CNT films play critical roles in reinforcing the natural convection. The novel CNT-based heat dissipation devices also have advantages of energy-saving, free-noise, and without additional accessories. So we believe that the CNT-based heat dissipation devices would replace the traditional metal-finned heat dissipation devices and have promising applications in electronic devices, such as photovoltaic devices, portable electronic devices, and electronic displays.

Programmable graphene doping via electron beam irradiation.

PubMed

Zhou, Yangbo; Jadwiszczak, Jakub; Keane, Darragh; Chen, Ying; Yu, Dapeng; Zhang, Hongzhou

2017-06-29

Graphene is a promising candidate to succeed silicon based devices, and the conventional strategies for fabrication and testing of graphene-based electronics often utilise an electron beam. Here, we report on a systematic study of the effect of electron beam exposure on graphene devices. We realise reversible doping of on-chip graphene using a focused electron beam. Our results demonstrate site-specific control of carrier type and concentration achievable by modulating the charge distribution in the substrate. The effect of substrate-embedded charges on carrier mobility and conductivity of graphene is studied, with a dielectric screening model proposed to explain the effective n-type and p-type doping produced at different beam energies. Multiple logic operations are thus implemented in a single graphene sheet by using site-specific e-beam irradiation. We extend the phenomenon to MoS 2 , generalising it to conductive two-dimensional materials. Our results are of importance to imaging, in situ characterisation and lithographic techniques employed to investigate 2D materials.

Functional electronic inversion layers at ferroelectric domain walls

NASA Astrophysics Data System (ADS)

Mundy, J. A.; Schaab, J.; Kumagai, Y.; Cano, A.; Stengel, M.; Krug, I. P.; Gottlob, D. M.; Doğanay, H.; Holtz, M. E.; Held, R.; Yan, Z.; Bourret, E.; Schneider, C. M.; Schlom, D. G.; Muller, D. A.; Ramesh, R.; Spaldin, N. A.; Meier, D.

2017-06-01

Ferroelectric domain walls hold great promise as functional two-dimensional materials because of their unusual electronic properties. Particularly intriguing are the so-called charged walls where a polarity mismatch causes local, diverging electrostatic potentials requiring charge compensation and hence a change in the electronic structure. These walls can exhibit significantly enhanced conductivity and serve as a circuit path. The development of all-domain-wall devices, however, also requires walls with controllable output to emulate electronic nano-components such as diodes and transistors. Here we demonstrate electric-field control of the electronic transport at ferroelectric domain walls. We reversibly switch from resistive to conductive behaviour at charged walls in semiconducting ErMnO3. We relate the transition to the formation--and eventual activation--of an inversion layer that acts as the channel for the charge transport. The findings provide new insight into the domain-wall physics in ferroelectrics and foreshadow the possibility to design elementary digital devices for all-domain-wall circuitry.

Low-temperature electronic transport in one-dimensional hybrid systems: Metal cluster embedded carbon nanotubes

NASA Astrophysics Data System (ADS)

Soldano, Caterina

The investigation of the electronic and magnetotransport properties at low temperature in individual MWNT with embedded clusters are here presented. The majority of studies of transport in MWNT reported in literature has been carried out on arc-discharge grown tubes, generally considered "clean" and defect-free. In this project, individual MWNT grown in alumina template are used; these tubes are highly disordered compared for example to arc-discharge ones, conditions that dramatically will impact the charge transport. As-fabricated devices are in general highly resistive. A large decrease in the value of the device resistance can be achieved through a controlled and fast high-bias sweep method (HBT) across the sample. Scanning electron microscopy analysis shows that this method induces a metal (platinum) decoration of the MWNT surface as a consequence of the large amount of Joule heating developed during the sweep. Temperature dependence study (5

Thermoelectric Polymers and their Elastic Aerogels.

PubMed

Khan, Zia Ullah; Edberg, Jesper; Hamedi, Mahiar Max; Gabrielsson, Roger; Granberg, Hjalmar; Wågberg, Lars; Engquist, Isak; Berggren, Magnus; Crispin, Xavier

2016-06-01

Electronically conducting polymers constitute an emerging class of materials for novel electronics, such as printed electronics and flexible electronics. Their properties have been further diversified to introduce elasticity, which has opened new possibility for "stretchable" electronics. Recent discoveries demonstrate that conducting polymers have thermoelectric properties with a low thermal conductivity, as well as tunable Seebeck coefficients - which is achieved by modulating their electrical conductivity via simple redox reactions. Using these thermoelectric properties, all-organic flexible thermoelectric devices, such as temperature sensors, heat flux sensors, and thermoelectric generators, are being developed. In this article we discuss the combination of the two emerging fields: stretchable electronics and polymer thermoelectrics. The combination of elastic and thermoelectric properties seems to be unique for conducting polymers, and difficult to achieve with inorganic thermoelectric materials. We introduce the basic concepts, and state of the art knowledge, about the thermoelectric properties of conducting polymers, and illustrate the use of elastic thermoelectric conducting polymer aerogels that could be employed as temperature and pressure sensors in an electronic-skin. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Multiscale examination and modeling of electron transport in nanoscale materials and devices

NASA Astrophysics Data System (ADS)

Banyai, Douglas R.

For half a century the integrated circuits (ICs) that make up the heart of electronic devices have been steadily improving by shrinking at an exponential rate. However, as the current crop of ICs get smaller and the insulating layers involved become thinner, electrons leak through due to quantum mechanical tunneling. This is one of several issues which will bring an end to this incredible streak of exponential improvement of this type of transistor device, after which future improvements will have to come from employing fundamentally different transistor architecture rather than fine tuning and miniaturizing the metal-oxide-semiconductor field effect transistors (MOSFETs) in use today. Several new transistor designs, some designed and built here at Michigan Tech, involve electrons tunneling their way through arrays of nanoparticles. We use a multi-scale approach to model these devices and study their behavior. For investigating the tunneling characteristics of the individual junctions, we use a first-principles approach to model conduction between sub-nanometer gold particles. To estimate the change in energy due to the movement of individual electrons, we use the finite element method to calculate electrostatic capacitances. The kinetic Monte Carlo method allows us to use our knowledge of these details to simulate the dynamics of an entire device---sometimes consisting of hundreds of individual particles---and watch as a device 'turns on' and starts conducting an electric current. Scanning tunneling microscopy (STM) and the closely related scanning tunneling spectroscopy (STS) are a family of powerful experimental techniques that allow for the probing and imaging of surfaces and molecules at atomic resolution. However, interpretation of the results often requires comparison with theoretical and computational models. We have developed a new method for calculating STM topographs and STS spectra. This method combines an established method for approximating the geometric variation of the electronic density of states, with a modern method for calculating spin-dependent tunneling currents, offering a unique balance between accuracy and accessibility.

Children's E-Book Technology: Devices, Books, and Book Builder

ERIC Educational Resources Information Center

Shiratuddin, Norshuhada; Landoni, Monica

2003-01-01

This article describes a study of children's electronic books (e-books) technology. In particular, the focus is on devices used to access children's e-books, current available e-books and an e-book builder specifically for children. Three small case studies were conducted: two to evaluate how children accept the devices and one to test the ease of…

Organic bistable memory devices based on MoO3 nanoparticle embedded Alq3 structures.

PubMed

Abhijith, T; Kumar, T V Arun; Reddy, V S

2017-03-03

Organic bistable memory devices were fabricated by embedding a thin layer of molybdenum trioxide (MoO 3 ) between two tris-(8-hydroxyquinoline)aluminum (Alq 3 ) layers. The device exhibited excellent switching characteristics with an ON/OFF current ratio of 1.15 × 10 3 at a read voltage of 1 V. The device showed repeatable write-erase capability and good stability in both the conductance states. These conductance states are non-volatile in nature and can be obtained by applying appropriate voltage pulses. The effect of MoO 3 layer thickness and its location in the Alq 3 matrix on characteristics of the memory device was investigated. The field emission scanning electron microscopy (FE-SEM) images of the MoO 3 layer revealed the presence of isolated nanoparticles. Based on the experimental results, a mechanism has been proposed for explaining the conductance switching of fabricated devices.

Organic bistable memory devices based on MoO3 nanoparticle embedded Alq3 structures

NASA Astrophysics Data System (ADS)

Abhijith, T.; Kumar, T. V. Arun; Reddy, V. S.

2017-03-01

Organic bistable memory devices were fabricated by embedding a thin layer of molybdenum trioxide (MoO3) between two tris-(8-hydroxyquinoline)aluminum (Alq3) layers. The device exhibited excellent switching characteristics with an ON/OFF current ratio of 1.15 × 103 at a read voltage of 1 V. The device showed repeatable write-erase capability and good stability in both the conductance states. These conductance states are non-volatile in nature and can be obtained by applying appropriate voltage pulses. The effect of MoO3 layer thickness and its location in the Alq3 matrix on characteristics of the memory device was investigated. The field emission scanning electron microscopy (FE-SEM) images of the MoO3 layer revealed the presence of isolated nanoparticles. Based on the experimental results, a mechanism has been proposed for explaining the conductance switching of fabricated devices.

APCVD hexagonal boron nitride thin films for passive near-junction thermal management of electronics

NASA Astrophysics Data System (ADS)

KC, Pratik; Rai, Amit; Ashton, Taylor S.; Moore, Arden L.

2017-12-01

The ability of graphene to serve as an ultrathin heat spreader has been previously demonstrated with impressive results. However, graphene is electrically conductive, making its use in contact with electronic devices problematic from a reliability and integration perspective. As an alternative, hexagonal boron nitride (h-BN) is a similarly structured material with large in-plane thermal conductivity but which possesses a wide band gap, thereby giving it potential to be utilized for directing contact, near-junction thermal management of electronics without shorting or the need for an insulating intermediate layer. In this work, the viability of using large area, continuous h-BN thin films as direct contact, near-junction heat spreaders for electronic devices is experimentally evaluated. Thin films of h-BN several square millimeters in size were synthesized via an atmospheric pressure chemical vapor deposition (APCVD) method that is both simple and scalable. These were subsequently transferred onto a microfabricated test device that simulated a multigate transistor while also allowing for measurements of the device temperature at various locations via precision resistance thermometry. Results showed that these large-area h-BN films with thicknesses of 77-125 nm are indeed capable of significantly lowering microdevice temperatures, with the best sample showing the presence of the h-BN thin film reduced the effective thermal resistance by 15.9% ± 4.6% compared to a bare microdevice at the same power density. Finally, finite element simulations of these experiments were utilized to estimate the thermal conductivity of the h-BN thin films and identify means by which further heat spreading performance gains could be attained.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Thompson, J.; Nichols, John A.; Lee, Shinbuhm

Metal electrodes are a universal element of all electronic devices. Conducting SrRuO 3 (SRO) epitaxial thin films have been extensively used as electrodes in complex-oxide heterostructures due to good lattice mismatches with perovskite substrates. However, when compared to SRO single crystals, SRO thin films have shown reduced conductivity and Curie temperatures (T C), which can lead to higher Joule heating and energy loss in the devices. In this paper, we report that high-quality SRO thin films can be synthesized by controlling the plume dynamics and growth rate of pulsed laser epitaxy (PLE) with real-time optical spectroscopic monitoring. The SRO thinmore » films grown under the kinetically controlled conditions, down to ca. 16 nm in thickness, exhibit both enhanced conductivity and T C as compared to bulk values, due to their improved stoichiometry and a strain-mediated increase of the bandwidth of Ru 4d electrons. Finally, this result provides a direction for enhancing the physical properties of PLE-grown thin films and paves a way to improved device applications.« less

Plasmonic hole arrays for combined photon and electron management

DOE PAGES

Liapis, Andreas C.; Sfeir, Matthew Y.; Black, Charles T.

2016-11-14

Material architectures that balance optical transparency and electrical conductivity are highly sought after for thin-film device applications. However, these are competing properties, since the electronic structure that gives rise to conductivity typically also leads to optical opacity. Nanostructured metal films that exhibit extraordinary optical transmission, while at the same time being electrically continuous, offer considerable flexibility in the design of their transparency and resistivity. In this paper, we present design guidelines for metal films perforated with arrays of nanometer-scale holes, discussing the consequences of the choice of nanostructure dimensions, of the type of metal, and of the underlying substrate onmore » their electrical, optical, and interfacial properties. We experimentally demonstrate that such films can be designed to have broad-band optical transparency while being an order of magnitude more conductive than indium tin oxide. Finally, prototypical photovoltaic devices constructed with perforated metal contacts convert ~18% of the incident photons, compared to <1% for identical devices having contacts without the hole array.« less

49 CFR 220.5 - Definitions.

Code of Federal Regulations, 2012 CFR

2012-10-01

... device means an electronic or electrical device used to conduct oral, written, or visual communication... equipment, or track motor car, singly or in combination with other equipment, on the track of a railroad..., roadway, signal and communication systems, electric traction systems, roadway facilities or roadway...

49 CFR 220.5 - Definitions.

Code of Federal Regulations, 2014 CFR

2014-10-01

... device means an electronic or electrical device used to conduct oral, written, or visual communication... equipment, or track motor car, singly or in combination with other equipment, on the track of a railroad..., roadway, signal and communication systems, electric traction systems, roadway facilities or roadway...

49 CFR 220.5 - Definitions.

Code of Federal Regulations, 2013 CFR

2013-10-01

... device means an electronic or electrical device used to conduct oral, written, or visual communication... equipment, or track motor car, singly or in combination with other equipment, on the track of a railroad..., roadway, signal and communication systems, electric traction systems, roadway facilities or roadway...

Integrated Nanoscale Nanowire Correlated Electronic Nanosensing Technology (INNOCENT)

DTIC Science & Technology

2006-06-01

out by characterizing the response of a 7 device to two different but structurally similar viruses, paramyxovirus and influenza A using nanowire devices...modified with antibodies specific for influenza A. Delivery of a solution containing paramyxovirus exhibited only short duration conductance changes

49 CFR 220.5 - Definitions.

Code of Federal Regulations, 2011 CFR

2011-10-01

... device means an electronic or electrical device used to conduct oral, written, or visual communication... equipment, or track motor car, singly or in combination with other equipment, on the track of a railroad..., roadway, signal and communication systems, electric traction systems, roadway facilities or roadway...

New Insights into Mechanism of Surface Reactions of ZnO Nanorods During Electrons Beam Irradiation.

PubMed

Cho, Youngseung; Ji, Hyunjin; Kim, Hyoungsub; Yoon, Jinsuop; Choi, Byoungdeog

2018-09-01

This study provides new insight into mechanisms of ionic reactions on the surface of ZnO nanorod networks, which could result in enhanced performance in optical or molecular sensors. The current- voltage characteristics of ZnO nanorod network devices exhibit typical nonlinear behavior in air, which implies the formation of a Schottky barrier when metals are used as contacts. The conductance of the device increased significantly in vacuum, which can be explained by the desorption of hydroxyl groups at very low pressure. While physisorbed water or oxygen-related ions can detach from the ZnO surface during evacuation, exposure to high energy in the electron beam is believed to detach the chemisorbed anions of O- and O-2 from the surface of ZnO nanorods, which releases more electrons into the channel. The increase in available electrons enhances the conductance of the ZnO nanorods. Slow initialization of the conductance under ambient conditions indicates that the ionic re-adsorption is inactive under these conditions. Thus, the electron irradiation process can be used to reset the surface ionic molecules on metal oxide nano-structures by tuning the surface potential prior to the passivation process.

Nonvolatile memory behavior of nanocrystalline cellulose/graphene oxide composite films

NASA Astrophysics Data System (ADS)

Valentini, L.; Cardinali, M.; Fortunati, E.; Kenny, J. M.

2014-10-01

With the continuous advance of modern electronics, the demand for nonvolatile memory cells rapidly grows. In order to develop post-silicon electronic devices, it is necessary to find innovative solutions to the eco-sustainability problem of materials for nonvolatile memory cells. In this work, we realized a resistive memory device based on graphene oxide (GO) and GO/cellulose nanocrystals (CNC) thin films. Aqueous solutions of GO and GO with CNC have been prepared and drop cast between two metal electrodes. Such thin-film based devices showed a transition between low and high conductivity states upon the forward and backward sweeping of an external electric field. This reversible current density transition behavior demonstrates a typical memory characteristic. The obtained results open an easy route for electronic information storage based on the integration of nanocrystalline cellulose onto graphene based devices.

Transient pulse analysis of ionized electronics exposed to γ-radiation generated from a relativistic electron beam

NASA Astrophysics Data System (ADS)

Min, Sun-Hong; Kwon, Ohjoon; Sattorov, Matlabjon; Baek, In-Keun; Kim, Seontae; Hong, Dongpyo; Jeong, Jin-Young; Jang, Jungmin; Bera, Anirban; Barik, Ranjan Kumar; Bhattacharya, Ranajoy; Cho, Ilsung; Kim, Byungsu; Park, Chawon; Jung, Wongyun; Park, Seunghyuk; Park, Gun-Sik

2018-02-01

When a semiconductor element is irradiated with radiation in the form of a transient pulse emitted from a nuclear explosion, a large amount of charge is generated in a short time in the device. A photocurrent amplified in a certain direction by these types of charges cause the device to break down and malfunction or in extreme cases causes them to burn out. In this study, a pulse-type γ-ray generator based on a relativistic electron beam accelerator (γ=2.2, β=0.89) which functions by means of tungsten impingement was constructed and tested in an effort to investigate the process and effects of the photocurrent formed by electron hole pairs (EHP) generated in a pMOSFET device when a transient radiation pulse is incident in the device. The pulse-type γ-ray irradiating device used here to generate the electron beam current in a short time was devised to allow an increase in the irradiation dose. A precise signal processing circuit was constructed to measure the photocurrent of the small signal generated by the pMOSFET due to the electron beam accelerator pulse signal from the large noise stemming from the electromagnetic field around the relativistic electron beam accelerator. The pulse-type γ-ray generator was installed to meet the requirements of relativistic electron beam accelerators, and beam irradiation was conducted after a beam commissioning step.

Biotechnology

NASA Image and Video Library

2000-12-15

NASA is looking to biological techniques that are millions of years old to help it develop new materials and nanotechnology for the 21st century. Sponsored by NASA, Jerzy Bernholc, a principal investigator in the microgravity materials science program and a physics professor at North Carolina State University, Bernholc works with very large-scale computations to model carbon molecules as they assemble themselves to form nanotubes. The strongest confirmed material known, nanotubes are much stronger than graphite, a more common material made of carbon, and weigh six times less than steel. Nanotubes have potential uses such as strain gauges, advanced electronic devices, amd batteries. The strength, light weight, and conductive qualities of nanotubes, shown in light blue in this computed electron distribution, make them excellent components of nanoscale devices. One way to conduct electricity to such devices is through contact with aluminum, shown in dark blue.

Electronic components embedded in a single graphene nanoribbon.

PubMed

Jacobse, P H; Kimouche, A; Gebraad, T; Ervasti, M M; Thijssen, J M; Liljeroth, P; Swart, I

2017-07-25

The use of graphene in electronic devices requires a band gap, which can be achieved by creating nanostructures such as graphene nanoribbons. A wide variety of atomically precise graphene nanoribbons can be prepared through on-surface synthesis, bringing the concept of graphene nanoribbon electronics closer to reality. For future applications it is beneficial to integrate contacts and more functionality directly into single ribbons by using heterostructures. Here, we use the on-surface synthesis approach to fabricate a metal-semiconductor junction and a tunnel barrier in a single graphene nanoribbon consisting of 5- and 7-atom wide segments. We characterize the atomic scale geometry and electronic structure by combined atomic force microscopy, scanning tunneling microscopy, and conductance measurements complemented by density functional theory and transport calculations. These junctions are relevant for developing contacts in all-graphene nanoribbon devices and creating diodes and transistors, and act as a first step toward complete electronic devices built into a single graphene nanoribbon.Adding functional electronic components to graphene nanoribbons requires precise control over their atomic structure. Here, the authors use a bottom-up approach to build a metal-semiconductor junction and a tunnel barrier directly into a single graphene nanoribbon, an exciting development for graphene-based electronic devices.

Facile fabrication of high-performance InGaZnO thin film transistor using hydrogen ion irradiation at room temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahn, Byung Du; Park, Jin-Seong; Chung, K. B., E-mail: kbchung@dongguk.edu

Device performance of InGaZnO (IGZO) thin film transistors (TFTs) are investigated as a function of hydrogen ion irradiation dose at room temperature. Field effect mobility is enhanced, and subthreshold gate swing is improved with the increase of hydrogen ion irradiation dose, and there is no thermal annealing. The electrical device performance is correlated with the electronic structure of IGZO films, such as chemical bonding states, features of the conduction band, and band edge states below the conduction band. The decrease of oxygen deficient bonding and the changes in electronic structure of the conduction band leads to the improvement of devicemore » performance in IGZO TFT with an increase of the hydrogen ion irradiation dose.« less

Resolving Single Molecule Lysozyme Dynamics with a Carbon Nanotube Electronic Circuit

NASA Astrophysics Data System (ADS)

Choi, Yongki; Moody, Issa S.; Perez, Israel; Sheps, Tatyana; Weiss, Gregory A.; Collins, Philip G.

2011-03-01

High resolution, real-time monitoring of a single lysozyme molecule is demonstrated by fabricating nanoscale electronic devices based on single-walled carbon nanotubes (SWCNT). In this sensor platform, a biomolecule of interest is attached to a single SWCNT device. The electrical conductance transduces chemical events with single molecule sensitivity and 10 microsecond resolution. In this work, enzymatic turnover by lysozyme is investigated, because the mechanistic details for its processivity and dynamics remain incompletely understood. Stochastically distributed binding events between a lysozyme and its binding substrate, peptidoglycan, are monitored via the sensor conductance. Furthermore, the magnitude and repetition rate of these events varies with pH and the presence of inhibitors or denaturation agents. Changes in the conductance signal are analyzed in terms of lysozyme's internal hinge motion, binding events, and enzymatic processing.

Investigation of electronic noise in selected mesoscopic devices

NASA Astrophysics Data System (ADS)

Camino, Fernando Enrique

In the last few years, several experiments and theoretical works have confirmed the importance of shot-noise measurements as a source of information about the charge transport in electronic devices, information that is not in all cases accessible from conductance measurements. The use of shot-noise for the direct confirmation of the fractional charge in the fractional quantum Hall effect or the identification of the transport mechanism in negative differential resistance devices are a few examples of its importance. In this thesis, we have performed shot-noise measurements on two semiconductor-based systems in which shot noise is different from the Poissonian value 2eI The first one is a superconductor/semiconductor/superconductor (sp/sm/sp) junction where the superconducting electrodes are 0.5 um apart and the semiconductor bridge between them is composed of a two-dimensional electron gas (2-DEG). The second system is a 2-DEG in the hopping conduction regime. The fabrication of sp/sm/sp junctions is explained in detail in this work as so are the noise measurements of two devices that show enhancement from the Poissonian value. These devices present the signatures of the phenomenon of Andreev reflections and supercurrent at 1.2K; therefore, we tentatively attribute the enhancement to this phenomenon, which has been predicted to give giant noise enhancement for superconducting quantum point contacts (SQPC). On the other hand, in the hoping conduction device, we have observed shot-noise suppression from its classical value, confirming in a different material system a previous experimental result that was explained by percolation theory. In addition, we have driven the system to a region where percolation theory seems to fail, signaling a reconstruction of the hopping trajectories.

Electrical device fabrication from nanotube formations

DOEpatents

Nicholas, Nolan Walker; Kittrell, W. Carter; Kim, Myung Jong; Schmidt, Howard K.

2013-03-12

A method for forming nanotube electrical devices, arrays of nanotube electrical devices, and device structures and arrays of device structures formed by the methods. Various methods of the present invention allow creation of semiconducting and/or conducting devices from readily grown SWNT carpets rather than requiring the preparation of a patterned growth channel and takes advantage of the self-controlling nature of these carpet heights to ensure a known and controlled channel length for reliable electronic properties as compared to the prior methods.

Smart materials: strain sensing and stress determination by means of nanotube sensing systems, composites, and devices

NASA Technical Reports Server (NTRS)

Kim, Jong Dae (Inventor); Nagarajaiah, Satish (Inventor); Barrera, Enrique V. (Inventor); Dharap, Prasad (Inventor); Zhiling, Li (Inventor)

2010-01-01

The present invention is directed toward devices comprising carbon nanotubes that are capable of detecting displacement, impact, stress, and/or strain in materials, methods of making such devices, methods for sensing/detecting/monitoring displacement, impact, stress, and/or strain via carbon nanotubes, and various applications for such methods and devices. The devices and methods of the present invention all rely on mechanically-induced electronic perturbations within the carbon nanotubes to detect and quantify such stress/strain. Such detection and quantification can rely on techniques which include, but are not limited to, electrical conductivity/conductance and/or resistivity/resistance detection/measurements, thermal conductivity detection/measurements, electroluminescence detection/measurements, photoluminescence detection/measurements, and combinations thereof. All such techniques rely on an understanding of how such properties change in response to mechanical stress and/or strain.

Kinetic factors determining conducting filament formation in solid polymer electrolyte based planar devices

NASA Astrophysics Data System (ADS)

Krishnan, Karthik; Aono, Masakazu; Tsuruoka, Tohru

2016-07-01

Resistive switching characteristics and conducting filament formation dynamics in solid polymer electrolyte (SPE) based planar-type atomic switches, with opposing active Ag and inert Pt electrodes, have been investigated by optimizing the device configuration and experimental parameters such as the gap distance between the electrodes, the salt inclusion in the polymer matrix, and the compliance current applied in current-voltage measurements. The high ionic conductivities of SPE enabled us to make scanning electron microscopy observations of the filament formation processes in the sub-micrometer to micrometer ranges. It was found that switching behaviour and filament growth morphology depend strongly on several kinetic factors, such as the redox reaction rate at the electrode-polymer interfaces, ion mobility in the polymer matrix, electric field strength, and the reduction sites for precipitation. Different filament formations, resulting from unidirectional and dendritic growth behaviours, can be controlled by tuning specified parameters, which in turn improves the stability and performance of SPE-based devices.Resistive switching characteristics and conducting filament formation dynamics in solid polymer electrolyte (SPE) based planar-type atomic switches, with opposing active Ag and inert Pt electrodes, have been investigated by optimizing the device configuration and experimental parameters such as the gap distance between the electrodes, the salt inclusion in the polymer matrix, and the compliance current applied in current-voltage measurements. The high ionic conductivities of SPE enabled us to make scanning electron microscopy observations of the filament formation processes in the sub-micrometer to micrometer ranges. It was found that switching behaviour and filament growth morphology depend strongly on several kinetic factors, such as the redox reaction rate at the electrode-polymer interfaces, ion mobility in the polymer matrix, electric field strength, and the reduction sites for precipitation. Different filament formations, resulting from unidirectional and dendritic growth behaviours, can be controlled by tuning specified parameters, which in turn improves the stability and performance of SPE-based devices. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr00569a

Low-Noise Wide Bandwith, Hot Electron Bolometer Mixers for Submillimeter Wavelengths

NASA Technical Reports Server (NTRS)

McGrath, W. R.

1995-01-01

Recently a novel superconductive hot-electron micro-bolometer has been proposed which is both fast and sensitive (D. E. Prober, Appl. Phys. Lett. 62, 2119, 1993). This device has several important properties which make it useful as a heterodyne sensor for radioastronomy applications at frequencies above 1 THz. The thermal response time of the device is fast enough, several 10's of picoseconds, to allow for IF's of several GHz. This bolometer mixer should operate well up to at least 10 THz. There is no energy gap limitation as in an SIS mixer, since the mixing process relies on heating of the electron gas. In fact, rf power is absorbed more uniformly above the gap frequency. The mixer noise should be near quantum-limited, and the local oscillator (LO) power requirement is very low: / 10 nW for a Nb device. One of the unique features of this device is that it employs rapid electron diffusion into a normal metal, rather than phonon emission, as the thermal conductance that cools the heated electrons. In order for diffusion to dominate over phonon emission, the device must be short, less than 0.5.

Flexible Transparent Supercapacitors Based on Hierarchical Nanocomposite Films.

PubMed

Chen, Fanhong; Wan, Pengbo; Xu, Haijun; Sun, Xiaoming

2017-05-31

Flexible transparent electronic devices have recently gained immense popularity in smart wearable electronics and touch screen devices, which accelerates the development of the portable power sources with reliable flexibility, robust transparency and integration to couple these electronic devices. For potentially coupled as energy storage modules in various flexible, transparent and portable electronics, the flexible transparent supercapacitors are developed and assembled from hierarchical nanocomposite films of reduced graphene oxide (rGO) and aligned polyaniline (PANI) nanoarrays upon their synergistic advantages. The nanocomposite films are fabricated from in situ PANI nanoarrays preparation in a blended solution of aniline monomers and rGO onto the flexible, transparent, and stably conducting film (FTCF) substrate, which is obtained by coating silver nanowires (Ag NWs) layer with Meyer rod and then coating of rGO layer on polyethylene terephthalate (PET) substrate. Optimization of the transparency, the specific capacitance, and the flexibility resulted in the obtained all-solid state nanocomposite supercapacitors exhibiting enhanced capacitance performance, good cycling stability, excellent flexibility, and superior transparency. It provides promising application prospects for exploiting flexible, low-cost, transparent, and high-performance energy storage devices to be coupled into various flexible, transparent, and wearable electronic devices.

A model for the electric conduction in metal/poly-TiO2/metal structure

NASA Astrophysics Data System (ADS)

Hossein-Babaei, Faramarz; Alaei-Sheini, Navid-

2017-12-01

Intensely studied memristive devices have M‧/MO/M″ structures, wherein MO is a nanometer-sized metal oxide crystallite sandwiched between the M‧ and M″ metal electrodes. The most widely used oxide for this purpose is TiO2 and the electrodes are of noble metals such as platinum, silver, and gold. The memristive features of the device is believed to originate from the motion of the ionized oxygen vacancies within the oxide crystal. The operation of the device is further complicated by the motion of the mobile cations originating from the metal electrodes. The complexity of the device performance increases further when the noble metal electrodes form Schottky barriers at their junctions with TiO2, as the conduction takes place through these energy barriers. In a recent publication, the authors have shown that, owing to the ohmicity of the Ti/TiO2 junctions, electronic observations on the devices with Ti/TiO2/Ti structure can be easier to model. The presented model clarified that in a Ti/poly-TiO2/Ti structure, the ionic motion and the electronic conduction take place on the TiO2 grain surfaces and grain boundaries rather than the grain interiors. Here, we show that the suggested model has important implications for chemical sensor design and fabrication.

Negative differential conductance and super-Poissonian shot noise in single-molecule magnet junctions

PubMed Central

Xue, Hai-Bin; Liang, Jiu-Qing; Liu, Wu-Ming

2015-01-01

Molecular spintroinic device based on a single-molecule magnet is one of the ultimate goals of semiconductor nanofabrication technologies. It is thus necessary to understand the electron transport properties of a single-molecule magnet junction. Here we study the negative differential conductance and super-Poissonian shot noise properties of electron transport through a single-molecule magnet weakly coupled to two electrodes with either one or both of them being ferromagnetic. We predict that the negative differential conductance and super-Poissonian shot noise, which can be tuned by a gate voltage, depend sensitively on the spin polarization of the source and drain electrodes. In particular, the shot noise in the negative differential conductance region can be enhanced or decreased originating from the different formation mechanisms of negative differential conductance. The effective competition between fast and slow transport channels is responsible for the observed negative differential conductance and super-Poissonian shot noise. In addition, we further discuss the skewness and kurtosis properties of transport current in the super-Poissonian shot noise regions. Our findings suggest a tunable negative differential conductance molecular device, and the predicted properties of high-order current cumulants are very interesting for a better understanding of electron transport through single-molecule magnet junctions. PMID:25736094

Negative differential conductance and super-Poissonian shot noise in single-molecule magnet junctions.

PubMed

Xue, Hai-Bin; Liang, Jiu-Qing; Liu, Wu-Ming

2015-03-04

Molecular spintroinic device based on a single-molecule magnet is one of the ultimate goals of semiconductor nanofabrication technologies. It is thus necessary to understand the electron transport properties of a single-molecule magnet junction. Here we study the negative differential conductance and super-Poissonian shot noise properties of electron transport through a single-molecule magnet weakly coupled to two electrodes with either one or both of them being ferromagnetic. We predict that the negative differential conductance and super-Poissonian shot noise, which can be tuned by a gate voltage, depend sensitively on the spin polarization of the source and drain electrodes. In particular, the shot noise in the negative differential conductance region can be enhanced or decreased originating from the different formation mechanisms of negative differential conductance. The effective competition between fast and slow transport channels is responsible for the observed negative differential conductance and super-Poissonian shot noise. In addition, we further discuss the skewness and kurtosis properties of transport current in the super-Poissonian shot noise regions. Our findings suggest a tunable negative differential conductance molecular device, and the predicted properties of high-order current cumulants are very interesting for a better understanding of electron transport through single-molecule magnet junctions.

Thin film electronic devices with conductive and transparent gas and moisture permeation barriers

DOEpatents

Simpson, Lin Jay

2013-12-17

A thin film stack (100, 200) is provided for use in electronic devices such as photovoltaic devices. The stack (100, 200) may be integrated with a substrate (110) such as a light transmitting/transmissive layer. A electrical conductor layer (120, 220) is formed on a surface of the substrate (110) or device layer such as a transparent conducting (TC) material layer (120,220) with pin holes or defects (224) caused by manufacturing. The stack (100) includes a thin film (130, 230) of metal that acts as a barrier for environmental contaminants (226, 228). The metal thin film (130,230) is deposited on the conductor layer (120, 220) and formed from a self-healing metal such as a metal that forms self-terminating oxides. A permeation plug or block (236) is formed in or adjacent to the thin film (130, 230) of metal at or proximate to the pin holes (224) to block further permeation of contaminants through the pin holes (224).

Frontiers of More than Moore in Bioelectronics and the Required Metrology Needs

NASA Astrophysics Data System (ADS)

Guiseppi-Elie, Anthony; Kotanen, Christian; Wilson, A. Nolan

2011-11-01

Silicon's intersection with biology is a premise inherent in Moore's prediction. Distinct from biologically inspired molecular logic and storage devices (more Moore) are the integration of solid state electronic devices with the soft condensed state of the body (more than Moore). Developments in biomolecular recognition events per sq. cm parallel those of Moore's Law. However, challenges continue in the area of "More than Moore". Two grand challenge problems must be addressed—the biocompatibility of synthetic materials with the myriad of tissue types within the human body and the interfacing of solid state micro- and nano-electronic devices with the electronics of biological systems. Electroconductive hydrogels have been developed as soft, condensed, biomimetic but otherwise inherently electronically conductive materials to address the challenge of interfacing solid state devices with the electronics of the body, which is predominantly ionic. Nano-templated interfaces via the oriented immobilization of single walled carbon nanotubes (SWCNTs) onto metallic electrodes have engendered reagentless, direct electron transfer between biological redox enzymes and solid state electrodes. In addressing these challenges, metrology needs and opportunities are found in such widely diverse areas as single molecule counting and addressing, sustainable power requirements such as the development of implantable biofuel cells for the deployment of implantable biochips, and new manufacturing paradigms to address plura-biology needs on solid state devices.

Development of a physical and electronic model for RuO 2 nanorod rectenna devices

NASA Astrophysics Data System (ADS)

Dao, Justin

Ruthenium oxide (RuO2) nanorods are an emergent technology in nanostructure devices. As the physical size of electronics approaches a critical lower limit, alternative solutions to further device miniaturization are currently under investigation. Thin-film nanorod growth is an interesting technology, being investigated for use in wireless communications, sensor systems, and alternative energy applications. In this investigation, self-assembled RuO2 nanorods are grown on a variety of substrates via a high density plasma, reactive sputtering process. Nanorods have been found to grow on substrates that form native oxide layers when exposed to air, namely silicon, aluminum, and titanium. Samples were analyzed with Scanning Electron Microscopy (SEM) and Transmission Electron Microscopy (TEM) techniques. Conductive Atomic Force Microscopy (C-AFM) measurements were performed on single nanorods to characterize structure and electrical conductivity. The C-AFM probe tip is placed on a single nanorod and I-V characteristics are measured, potentially exhibiting rectifying capabilities. An analysis of these results using fundamental semiconductor physics principles is presented. Experimental data for silicon substrates was most closely approximated by the Simmons model for direct electron tunneling, whereas that of aluminum substrates was well approximated by Fowler-Nordheim tunneling. The native oxide of titanium is regarded as a semiconductor rather than an insulator and its ability to function as a rectifier is not strong. An electronic model for these nanorods is described herein.

Quantum corrections to conductivity in graphene with vacancies

NASA Astrophysics Data System (ADS)

Araujo, E. N. D.; Brant, J. C.; Archanjo, B. S.; Medeiros-Ribeiro, G.; Alves, E. S.

2018-06-01

In this work, different regions of a graphene device were exposed to a 30 keV helium ion beam creating a series of alternating strips of vacancy-type defects and pristine graphene. From magnetoconductance measurements as function of temperature, density of carriers and density of strips we show that the electron-electron interaction is important to explain the logarithmic quantum corrections to the Drude conductivity in graphene with vacancies. It is known that vacancies in graphene behave as local magnetic moments that interact with the conduction electrons and leads to a logarithmic correction to the conductance through the Kondo effect. However, our work shows that it is necessary to account for the non-homogeneity of the sample to avoid misinterpretations about the Kondo physics due the difficulties in separating the electron-electron interaction from the Kondo effect.

Resistance switching behavior of atomic layer deposited SrTiO3 film through possible formation of Sr2Ti6O13 or Sr1Ti11O20 phases

PubMed Central

Lee, Woongkyu; Yoo, Sijung; Yoon, Kyung Jean; Yeu, In Won; Chang, Hye Jung; Choi, Jung-Hae; Hoffmann-Eifert, Susanne; Waser, Rainer; Hwang, Cheol Seong

2016-01-01

Identification of microstructural evolution of nanoscale conducting phase, such as conducting filament (CF), in many resistance switching (RS) devices is a crucial factor to unambiguously understand the electrical behaviours of the RS-based electronic devices. Among the diverse RS material systems, oxide-based redox system comprises the major category of these intriguing electronic devices, where the local, along both lateral and vertical directions of thin films, changes in oxygen chemistry has been suggested to be the main RS mechanism. However, there are systems which involve distinctive crystallographic phases as CF; the Magnéli phase in TiO2 is one of the very well-known examples. The current research reports the possible presence of distinctive local conducting phase in atomic layer deposited SrTiO3 RS thin film. The conducting phase was identified through extensive transmission electron microscopy studies, which indicated that oxygen-deficient Sr2Ti6O13 or Sr1Ti11O20 phase was presumably present mainly along the grain boundaries of SrTiO3 after the unipolar set switching in Pt/TiN/SrTiO3/Pt structure. A detailed electrical characterization revealed that the samples showed typical bipolar and complementary RS after the memory cell was unipolar reset. PMID:26830978

Role of failure-mechanism identification in accelerated testing

NASA Technical Reports Server (NTRS)

Hu, J. M.; Barker, D.; Dasgupta, A.; Arora, A.

1993-01-01

Accelerated life testing techniques provide a short-cut method to investigate the reliability of electronic devices with respect to certain dominant failure mechanisms that occur under normal operating conditions. However, accelerated tests have often been conducted without knowledge of the failure mechanisms and without ensuring that the test accelerated the same mechanism as that observed under normal operating conditions. This paper summarizes common failure mechanisms in electronic devices and packages and investigates possible failure mechanism shifting during accelerated testing.

Current-voltage characteristics and transition voltage spectroscopy of individual redox proteins.

PubMed

Artés, Juan M; López-Martínez, Montserrat; Giraudet, Arnaud; Díez-Pérez, Ismael; Sanz, Fausto; Gorostiza, Pau

2012-12-19

Understanding how molecular conductance depends on voltage is essential for characterizing molecular electronics devices. We reproducibly measured current-voltage characteristics of individual redox-active proteins by scanning tunneling microscopy under potentiostatic control in both tunneling and wired configurations. From these results, transition voltage spectroscopy (TVS) data for individual redox molecules can be calculated and analyzed statistically, adding a new dimension to conductance measurements. The transition voltage (TV) is discussed in terms of the two-step electron transfer (ET) mechanism. Azurin displays the lowest TV measured to date (0.4 V), consistent with the previously reported distance decay factor. This low TV may be advantageous for fabricating and operating molecular electronic devices for different applications. Our measurements show that TVS is a helpful tool for single-molecule ET measurements and suggest a mechanism for gating of ET between partner redox proteins.

Toward single-chirality carbon nanotube device arrays.

PubMed

Vijayaraghavan, Aravind; Hennrich, Frank; Stürzl, Ninette; Engel, Michael; Ganzhorn, Marc; Oron-Carl, Matti; Marquardt, Christoph W; Dehm, Simone; Lebedkin, Sergei; Kappes, Manfred M; Krupke, Ralph

2010-05-25

The large-scale integration of devices consisting of individual single-walled carbon nanotubes (SWCNT), all of the same chirality, is a critical step toward their electronic, optoelectronic, and electromechanical application. Here, the authors realize two related goals, the first of which is the fabrication of high-density, single-chirality SWCNT device arrays by dielectrophoretic assembly from monodisperse SWCNT solution obtained by polymer-mediated sorting. Such arrays are ideal for correlating measurements using various techniques across multiple identical devices, which is the second goal. The arrays are characterized by voltage-contrast scanning electron microscopy, electron transport, photoluminescence (PL), and Raman spectroscopy and show identical signatures as expected for single-chirality SWCNTs. In the assembled nanotubes, a large D peak in Raman spectra, a large dark-exciton peak in PL spectra as well as lowered conductance and slow switching in electron transport are all shown to be correlated to each other. By comparison to control samples, we conclude that these are the result of scattering from electronic and not structural defects resulting from the polymer wrapping, similar to what has been predicted for DNA wrapping.

Microwave Plasma Based Single-Step Method for Generation of Carbon Nanostructures

DTIC Science & Technology

2013-07-01

Técnico, Technical University of Lisbon, Portugal 2 Mechanical and Aerospace Engeneering , Naval Postgraduate School, Monterey, CA 93943, U.S.A...Plasma environments constitute powerful tools in materials science due to their operation as thermal and chemical reactors. A microwave, atmospheric...applications include electronic devices, transparent conductive films, mechanical devices, chemical sensors, spintronic devices. Moreover, it shows enormous

Interfacing with the brain using organic electronics (Presentation Recording)

NASA Astrophysics Data System (ADS)

Malliaras, George G.

2015-10-01

Implantable electrodes are being used for diagnostic purposes, for brain-machine interfaces, and for delivering electrical stimulation to alleviate the symptoms of diseases such as Parkinson's. The field of organic electronics made available devices with a unique combination of attractive properties, including mixed ionic/electronic conduction, mechanical flexibility, enhanced biocompatibility, and capability for drug delivery. I will present examples of organic electrodes, transistors and other devices for recording and stimulation of brain activity and discuss how they can improve our understanding of brain physiology and pathology, and how they can be used to deliver new therapies.

Localized conductive patterning via focused electron beam reduction of graphene oxide

NASA Astrophysics Data System (ADS)

Kim, Songkil; Kulkarni, Dhaval D.; Henry, Mathias; Zackowski, Paul; Jang, Seung Soon; Tsukruk, Vladimir V.; Fedorov, Andrei G.

2015-03-01

We report on a method for "direct-write" conductive patterning via reduction of graphene oxide (GO) sheets using focused electron beam induced deposition (FEBID) of carbon. FEBID treatment of the intrinsically dielectric graphene oxide between two metal terminals opens up the conduction channel, thus enabling a unique capability for nanoscale conductive domain patterning in GO. An increase in FEBID electron dose results in a significant increase of the domain electrical conductivity with improving linearity of drain-source current vs. voltage dependence, indicative of a change of graphene oxide electronic properties from insulating to semiconducting. Density functional theory calculations suggest a possible mechanism underlying this experimentally observed phenomenon, as localized reduction of graphene oxide layers via interactions with highly reactive intermediates of electron-beam-assisted dissociation of surface-adsorbed hydrocarbon molecules. These findings establish an unusual route for using FEBID as nanoscale lithography and patterning technique for engineering carbon-based nanomaterials and devices with locally tailored electronic properties.

Anisotropic conducting films for electromagnetic radiation applications

DOEpatents

Cavallo, Francesca; Lagally, Max G.; Rojas-Delgado, Richard

2015-06-16

Electronic devices for the generation of electromagnetic radiation are provided. Also provided are methods for using the devices to generate electromagnetic radiation. The radiation sources include an anisotropic electrically conducting thin film that is characterized by a periodically varying charge carrier mobility in the plane of the film. The periodic variation in carrier mobility gives rise to a spatially varying electric field, which produces electromagnetic radiation as charged particles pass through the film.

Nonvolatile memory behavior of nanocrystalline cellulose/graphene oxide composite films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Valentini, L., E-mail: luca.valentini@unipg.it; Cardinali, M.; Fortunati, E.

2014-10-13

With the continuous advance of modern electronics, the demand for nonvolatile memory cells rapidly grows. In order to develop post-silicon electronic devices, it is necessary to find innovative solutions to the eco-sustainability problem of materials for nonvolatile memory cells. In this work, we realized a resistive memory device based on graphene oxide (GO) and GO/cellulose nanocrystals (CNC) thin films. Aqueous solutions of GO and GO with CNC have been prepared and drop cast between two metal electrodes. Such thin-film based devices showed a transition between low and high conductivity states upon the forward and backward sweeping of an external electricmore » field. This reversible current density transition behavior demonstrates a typical memory characteristic. The obtained results open an easy route for electronic information storage based on the integration of nanocrystalline cellulose onto graphene based devices.« less

Interband cascade detectors

NASA Technical Reports Server (NTRS)

Chuang, Shun Lien (Inventor); Li, Jian (Inventor); Yang, Rui Q. (Inventor)

2007-01-01

A device for detecting radiation, typically in the infrared. Photons are absorbed in an active region of a semiconductor device such that the absorption induces an interband electronic transition and generates photo-excited charge carriers. The charge carriers are coupled into a carrier transport region having multiple quantum wells and characterized by intersubband relaxation that provides rapid charge carrier collection. The photo-excited carriers are collected from the carrier transport region at a conducting contact region. Another carrier transport region characterized by interband tunneling for multiple stages draws charge carriers from another conducting contact and replenishes the charge carriers to the active region for photo-excitation. A photocurrent is generated between the conducting contacts through the active region of the device.

Effect of increased crystallinity of single-walled carbon nanotubes used as field emitters on their electrical properties

NASA Astrophysics Data System (ADS)

Shimoi, Norihiro

2015-12-01

Single-walled carbon nanotubes (SWCNTs) synthesized by arc discharge are expected to exhibit good field emission (FE) properties at a low driving voltage. We used a coating containing homogeneously dispersed highly crystalline SWCNTs produced by a high-temperature annealing process to fabricate an FE device by a wet-coating process at a low cost. Using the coating, we succeeded in reducing the power consumption of field emitters for planar lighting devices. SWCNTs synthesized by arc discharge have crystal defects in the carbon network, which are considered to induce inelastic electron tunneling that deteriorates the electrical conductivity of the SWCNTs. In this study, the blocking of the transport of electrons in SWCNTs with crystal defects is simulated using an inelastic electron tunneling model. We succeeded in clarifying the mechanism underlying the electrical conductivity of SWCNTs by controlling their crystallinity. In addition, it was confirmed that field emitters using highly crystalline SWCNTs can lead to new applications operating with low power consumption and new devices that may change our daily lives in the future.

Effect of increased crystallinity of single-walled carbon nanotubes used as field emitters on their electrical properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shimoi, Norihiro, E-mail: shimoi@mail.kankyo.tohoku.ac.jp

2015-12-07

Single-walled carbon nanotubes (SWCNTs) synthesized by arc discharge are expected to exhibit good field emission (FE) properties at a low driving voltage. We used a coating containing homogeneously dispersed highly crystalline SWCNTs produced by a high-temperature annealing process to fabricate an FE device by a wet-coating process at a low cost. Using the coating, we succeeded in reducing the power consumption of field emitters for planar lighting devices. SWCNTs synthesized by arc discharge have crystal defects in the carbon network, which are considered to induce inelastic electron tunneling that deteriorates the electrical conductivity of the SWCNTs. In this study, themore » blocking of the transport of electrons in SWCNTs with crystal defects is simulated using an inelastic electron tunneling model. We succeeded in clarifying the mechanism underlying the electrical conductivity of SWCNTs by controlling their crystallinity. In addition, it was confirmed that field emitters using highly crystalline SWCNTs can lead to new applications operating with low power consumption and new devices that may change our daily lives in the future.« less

Carbon nanotube vacuum gauges utilizing long, dissipative tubes

NASA Astrophysics Data System (ADS)

Kaul, Anupama B.; Manohara, Harish M.

2008-04-01

A carbon nanotube-based thermal conductivity vacuum gauge is described which utilizes 5-10 μm long diffusively contacted SWNTs for vacuum sensing. By etching the thermal SiO II beneath the tubes and minimizing heat conduction through the substrate, pressure sensitivity was extended toward higher vacuums. The pressure response of unannealed and annealed devices was compared to that of released devices. The released devices showed sensitivity to pressure as low as 1 x 10 -6 Torr. The sensitivity increased more dramatically with power for the released device compared to that of the unreleased device. Low temperature electronic transport measurements of the tubes were suggestive of a thermally activated hopping mechanism where the activation energy for hopping was calculated to be ~ 39 meV.

Nanoalloy Printed and Pulse-Laser Sintered Flexible Sensor Devices with Enhanced Stability and Materials Compatibility

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Wei; Rovore, Thomas; Weerawarne, Darshana

2015-06-02

While conformal and wearable devices have become one of the most desired formats for printable electronics, it is challenging to establish a scalable process that produces stable conductive patterns but also uses substrates compatible with widely available wearable materials. Here, we describe findings of an investigation of a nanoalloy ink printed and pulsed laser sintered conductive patterns as flexible functional devices with enhanced stability and materials compatibility. While nanoparticle inks are desired for printable electronics, almost all existing nanoparticle inks are based on single-metal component, which, as an electronic element, is limited by its inherent stabilities of the metal suchmore » as propensity of metal oxidation and mobility of metal ions, especially in sintering processes. The work here has demonstrated the first example in exploiting plasmonic coupling of nanoalloys and pulsed-laser energy with controllable thermal penetration. The experimental and theoretical results have revealed clear correlation between the pulsed laser parameters and the nanoalloy structural characteristics. The superior performance of the resulting flexible sensor device, upon imparting nanostructured sensing materials, for detecting volatile organic compounds has significant implications to developing stable and wearable sensors for monitoring environmental pollutants and breath biomarkers. This simple “nanoalloy printing 'laser sintering' nanostructure printing” process is entirely general to many different sensor devices and nanostructured sensing materials, enabling the ability to easily construct sophisticated sensor array.« less

Nanoalloy Printed and Pulse-Laser Sintered Flexible Sensor Devices with Enhanced Stability and Materials Compatibility.

PubMed

Zhao, Wei; Rovere, Thomas; Weerawarne, Darshana; Osterhoudt, Gavin; Kang, Ning; Joseph, Pharrah; Luo, Jin; Shim, Bonggu; Poliks, Mark; Zhong, Chuan-Jian

2015-06-23

While conformal and wearable devices have become one of the most desired formats for printable electronics, it is challenging to establish a scalable process that produces stable conductive patterns but also uses substrates compatible with widely available wearable materials. Here, we describe findings of an investigation of a nanoalloy ink printed and pulsed-laser sintered conductive patterns as flexible functional devices with enhanced stability and materials compatibility. While nanoparticle inks are desired for printable electronics, almost all existing nanoparticle inks are based on single-metal component, which, as an electronic element, is limited by its inherent stabilities of the metal such as propensity of metal oxidation and mobility of metal ions, especially in sintering processes. The work here has demonstrated the first example in exploiting plasmonic coupling of nanoalloys and pulsed-laser energy with controllable thermal penetration. The experimental and theoretical results have revealed clear correlation between the pulsed laser parameters and the nanoalloy structural characteristics. The superior performance of the resulting flexible sensor device, upon imparting nanostructured sensing materials, for detecting volatile organic compounds has significant implications to developing stable and wearable sensors for monitoring environmental pollutants and breath biomarkers. This simple "nanoalloy printing-laser sintering-nanostructure printing" process is entirely general to many different sensor devices and nanostructured sensing materials, enabling the ability to easily construct sophisticated sensor array.

Highly conductive and flexible nano-structured carbon-based polymer nanocomposites with improved electromagnetic-interference-shielding performance

NASA Astrophysics Data System (ADS)

Mondal, Subhadip; Ghosh, Sabyasachi; Ganguly, Sayan; Das, Poushali; Ravindren, Revathy; Sit, Subhashis; Chakraborty, Goutam; Das, Narayan Ch

2017-10-01

Widespread usage and development of electrical/electronic devices can create severe problems for various other devices and in our everyday lives due to harmful exposure to electromagnetic (EM) radiation. Herein, we report on the electromagnetic interference (EMI)-shielding performance of highly flexible and conductive chlorinated polyethylene (CPE)/carbon nanofiber (CNF) nanocomposites fabricated by a probe-sonication-assisted simple solution-mixing process. The dispersion of CNF nanofillers inside the CPE matrix has been studied by electron micrographs. This dispersion is reflected in the formation of continuous conductive networks at a low percolation-threshold value of 2.87 wt% and promising EMI-shielding performance of 41.5 dB for 25 wt% CNF in the X-band frequency (8.2-12.4 GHz). Such an intriguing performance mainly depends on the unique filler-filler or filler-polymer networks in CPE nanocomposites. In addition, the composite material displays a superior EMI efficiency of 47.5 dB for 2.0 mm thickness at 8.2 GHz. However, we have been encouraged by the promotion of highly flexible and lightweight CPE/CNF nanocomposite as a superior EMI shield, which can protect electronic devices against harm caused by EM radiation and offers an adaptable solution in advanced EMI-shield applications.

Effectiveness of mobile electronic devices in weight loss among overweight and obese populations: a systematic review and meta-analysis.

PubMed

Khokhar, Bushra; Jones, Jessica; Ronksley, Paul E; Armstrong, Marni J; Caird, Jeff; Rabi, Doreen

2014-01-01

Mobile electronic devices, such as mobile phones and PDAs, have emerged as potentially useful tools in the facilitation and maintenance of weight loss. While RCTs have demonstrated a positive impact of mobile interventions, the extent to which mobile electronic devices are more effective than usual care methods is still being debated. Electronic databases were systematically searched for RCTs evaluating the effectiveness of mobile electronic device interventions among overweight and obese adults. Weighted mean difference for change in body weight was the primary outcome. The search strategy yielded 559 citations and of the 108 potentially relevant studies, six met the criteria. A total of 632 participants were included in the six studies reporting a mean change in body weight. Using a random-effects model, the WMD for the effect of using mobile electronic devices on reduction in body weight was -1.09 kg (95% CI -2.12, -0.05). When stratified by the type of mobile electronic device used, it suggests that interventions using mobile phones were effective at achieving weight loss, WMD = -1.78 kg (95% CI -2.92, -0.63). This systematic review and meta-analysis suggests that mobile electronic devices have the potential to facilitate weight loss in overweight and obese populations, but further work is needed to understand if these interventions have sustained benefit and how we can make these mHealth tools most effective on a large scale. As the field of healthcare increasingly utilizes novel mobile technologies, the focus must not be on any one specific device but on the best possible use of these tools to measure and understand behavior. As mobile electronic devices continue to increase in popularity and the associated technology continues to advance, the potential for the use of mobile devices in global healthcare is enormous. More RCTs with larger sample sizes need to be conducted to look at the cost-effectiveness, technical and financial feasibility of adapting such mHealth interventions in a real clinical setting.

Vacuum field-effect transistor with a deep submicron channel fabricated by electro-forming

NASA Astrophysics Data System (ADS)

Wang, Xiao; Shen, Zhihua; Wu, Shengli; Zhang, Jintao

2017-06-01

Vacuum field-effect transistors (VFETs) with channel lengths down to 500 nm (i.e., the deep submicron scale) were fabricated with the mature technology of the surface conduction electron emitter fabrication process in our former experiments. The vacuum channel of this new VFET was generated by using the electro-forming process. During electro-forming, the joule heat cracks the conductive film and then generates the submicron scale gap that serves as the vacuum channel. The gap separates the conductive film into two plane-to-plane electrodes, which serve as a source (cathode) electrode and a drain (anode) electrode of the VFET, respectively. Experimental results reveal that the fabricated device demonstrates a clear triode behavior of the gate modulation. Fowler-Nordheim theory was used to analyze the electron emission mechanism and operating principle of the device.

Effects of low speed wind on the recognition/identification and pass-through communication tasks of auditory situation awareness afforded by military hearing protection/enhancement devices and tactical communication and protective systems.

PubMed

Lee, Kichol; Casali, John G

2016-01-01

To investigate the effect of controlled low-speed wind-noise on the auditory situation awareness performance afforded by military hearing protection/enhancement devices (HPED) and tactical communication and protective systems (TCAPS). Recognition/identification and pass-through communications tasks were separately conducted under three wind conditions (0, 5, and 10 mph). Subjects wore two in-ear-type TCAPS, one earmuff-type TCAPS, a Combat Arms Earplug in its 'open' or pass-through setting, and an EB-15LE electronic earplug. Devices with electronic gain systems were tested under two gain settings: 'unity' and 'max'. Testing without any device (open ear) was conducted as a control. Ten subjects were recruited from the student population at Virginia Tech. Audiometric requirements were 25 dBHL or better at 500, 1000, 2000, 4000, and 8000 Hz in both ears. Performance on the interaction of communication task-by-device was significantly different only in 0 mph wind speed. The between-device performance differences varied with azimuthal speaker locations. It is evident from this study that stable (non-gusting) wind speeds up to 10 mph did not significantly degrade recognition/identification task performance and pass-through communication performance of the group of HPEDs and TCAPS tested. However, the various devices performed differently as the test sound signal speaker location was varied and it appears that physical as well as electronic features may have contributed to this directional result.

Characterization of a high performance ultra-thin heat pipe cooling module for mobile hand held electronic devices

NASA Astrophysics Data System (ADS)

Ahamed, Mohammad Shahed; Saito, Yuji; Mashiko, Koichi; Mochizuki, Masataka

2017-11-01

In recent years, heat pipes have been widely used in various hand held mobile electronic devices such as smart phones, tablet PCs, digital cameras. With the development of technology these devices have different user friendly features and applications; which require very high clock speeds of the processor. In general, a high clock speed generates a lot of heat, which needs to be spreaded or removed to eliminate the hot spot on the processor surface. However, it is a challenging task to achieve proper cooling of such electronic devices mentioned above because of their confined spaces and concentrated heat sources. Regarding this challenge, we introduced an ultra-thin heat pipe; this heat pipe consists of a special fiber wick structure named as "Center Fiber Wick" which can provide sufficient vapor space on the both sides of the wick structure. We also developed a cooling module that uses this kind of ultra-thin heat pipe to eliminate the hot spot issue. This cooling module consists of an ultra-thin heat pipe and a metal plate. By changing the width, the flattened thickness and the effective length of the ultra-thin heat pipe, several experiments have been conducted to characterize the thermal properties of the developed cooling module. In addition, other experiments were also conducted to determine the effects of changes in the number of heat pipes in a single module. Characterization and comparison of the module have also been conducted both experimentally and theoretically.

Fabrication and test of digital output interface devices for gas turbine electronic controls

NASA Technical Reports Server (NTRS)

Newirth, D. M.; Koenig, E. W.

1978-01-01

A program was conducted to develop an innovative digital output interface device, a digital effector with optical feedback of the fuel metering valve position, for future electronic controls for gas turbine engines. A digital effector (on-off solenoids driven directly by on-off signals from a digital electronic controller) with optical position feedback was fabricated, coupled with the fuel metering valve, and tested under simulated engine operating conditions. The testing indicated that a digital effector with optical position feedback is a suitable candidate, with proper development for future digital electronic gas turbine controls. The testing also identified several problem areas which would have to be overcome in a final production configuration.

Textile-Based Electronic Components for Energy Applications: Principles, Problems, and Perspective

PubMed Central

Kaushik, Vishakha; Lee, Jaehong; Hong, Juree; Lee, Seulah; Lee, Sanggeun; Seo, Jungmok; Mahata, Chandreswar; Lee, Taeyoon

2015-01-01

Textile-based electronic components have gained interest in the fields of science and technology. Recent developments in nanotechnology have enabled the integration of electronic components into textiles while retaining desirable characteristics such as flexibility, strength, and conductivity. Various materials were investigated in detail to obtain current conductive textile technology, and the integration of electronic components into these textiles shows great promise for common everyday applications. The harvest and storage of energy in textile electronics is a challenge that requires further attention in order to enable complete adoption of this technology in practical implementations. This review focuses on the various conductive textiles, their methods of preparation, and textile-based electronic components. We also focus on fabrication and the function of textile-based energy harvesting and storage devices, discuss their fundamental limitations, and suggest new areas of study. PMID:28347078

Textile-Based Electronic Components for Energy Applications: Principles, Problems, and Perspective.

PubMed

Kaushik, Vishakha; Lee, Jaehong; Hong, Juree; Lee, Seulah; Lee, Sanggeun; Seo, Jungmok; Mahata, Chandreswar; Lee, Taeyoon

2015-09-07

Textile-based electronic components have gained interest in the fields of science and technology. Recent developments in nanotechnology have enabled the integration of electronic components into textiles while retaining desirable characteristics such as flexibility, strength, and conductivity. Various materials were investigated in detail to obtain current conductive textile technology, and the integration of electronic components into these textiles shows great promise for common everyday applications. The harvest and storage of energy in textile electronics is a challenge that requires further attention in order to enable complete adoption of this technology in practical implementations. This review focuses on the various conductive textiles, their methods of preparation, and textile-based electronic components. We also focus on fabrication and the function of textile-based energy harvesting and storage devices, discuss their fundamental limitations, and suggest new areas of study.

Logarithmic singularities and quantum oscillations in magnetically doped topological insulators

NASA Astrophysics Data System (ADS)

Nandi, D.; Sodemann, Inti; Shain, K.; Lee, G. H.; Huang, K.-F.; Chang, Cui-Zu; Ou, Yunbo; Lee, S. P.; Ward, J.; Moodera, J. S.; Kim, P.; Yacoby, A.

2018-02-01

We report magnetotransport measurements on magnetically doped (Bi,Sb ) 2Te3 films grown by molecular beam epitaxy. In Hall bar devices, we observe logarithmic dependence of transport coefficients in temperature and bias voltage which can be understood to arise from electron-electron interaction corrections to the conductivity and self-heating. Submicron scale devices exhibit intriguing quantum oscillations at high magnetic fields with dependence on bias voltage. The observed quantum oscillations can be attributed to bulk and surface transport.

Quantification of deep traps in nanocrystal solids, their electronic properties, and their influence on device behavior.

PubMed

Bozyigit, Deniz; Volk, Sebastian; Yarema, Olesya; Wood, Vanessa

2013-11-13

We implement three complementary techniques to quantify the number, energy, and electronic properties of trap states in nanocrystal (NC)-based devices. We demonstrate that, for a given technique, the ability to observe traps depends on the Fermi level position, highlighting the importance of a multitechnique approach that probes trap coupling to both the conduction and the valence bands. We then apply our protocol for characterizing traps to quantitatively explain the measured performances of PbS NC-based solar cells.

Direct measurement of chiral structure and transport in single- and multi-walled carbon nanotubes

NASA Astrophysics Data System (ADS)

Cui, Taoran; Lin, Letian; Qin, Lu-Chang; Washburn, Sean

2016-11-01

Electrical devices based on suspended multi-wall carbon nanotubes were constructed and studied. The chiral structure of each shell in a particular nanotube was determined using nanobeam electron diffraction in a transmission electron microscope. The transport properties of the carbon nanotube were also measured. The nanotube device length was short enough that the transport was nearly ballistic, and multiple subbands contributed to the conductance. Thermal excitation of carriers significantly affected nanotube resistance at room temperature.

Electron holography on HfO2/HfO2-x bilayer structures with multilevel resistive switching properties

NASA Astrophysics Data System (ADS)

Niu, G.; Schubert, M. A.; Sharath, S. U.; Zaumseil, P.; Vogel, S.; Wenger, C.; Hildebrandt, E.; Bhupathi, S.; Perez, E.; Alff, L.; Lehmann, M.; Schroeder, T.; Niermann, T.

2017-05-01

Unveiling the physical nature of the oxygen-deficient conductive filaments (CFs) that are responsible for the resistive switching of the HfO2-based resistive random access memory (RRAM) devices represents a challenging task due to the oxygen vacancy related defect nature and nanometer size of the CFs. As a first important step to this goal, we demonstrate in this work direct visualization and a study of physico-chemical properties of oxygen-deficient amorphous HfO2-x by carrying out transmission electron microscopy electron holography as well as energy dispersive x-ray spectroscopy on HfO2/HfO2-x bilayer heterostructures, which are realized by reactive molecular beam epitaxy. Furthermore, compared to single layer devices, Pt/HfO2/HfO2-x /TiN bilayer devices show enhanced resistive switching characteristics with multilevel behavior, indicating their potential as electronic synapses in future neuromorphic computing applications.

Phonoconductivity measurements of the electron-phonon interaction in quantum wire structures

NASA Astrophysics Data System (ADS)

Naylor, A. J.; Strickland, K. R.; Kent, A. J.; Henini, M.

1996-07-01

We have used a phonoconductivity technique to investigate the electron-phonon interaction in quantum wires. This interaction has important consequences for certain aspects of device behaviour. The 10 μm long wires were formed in GaAs/AlGaAs heterojunctions using split-gates. Ballistic phonon pulses, with an approximately Planckian frequency spectrum, were generated by a resistive film heater on the opposite side of the substrate. The interaction of the phonons with the quantum wire was detected via changes in conductance of the device. Oscillations in the phonoconductivity were observed with increasing (negative) gate bias. These oscillations were related to the Fermi level position relative to the one-dimensional subband structure which was determined from electrical transport measurements. We give a qualitative explanation of the results in terms of phonon induced inter- and intra- 1D subband electronic transitions leading to changes in the electron temperature which in turn affect the conductance. From our results we obtain a value for the effective width of the quantum wire.

Purely electronic mechanism of electrolyte gating of indium tin oxide thin films

DOE PAGES

Leng, X.; Bozovic, I.; Bollinger, A. T.

2016-08-10

Epitaxial indium tin oxide films have been grown on both LaAlO 3 and yttria-stabilized zirconia substrates using RF magnetron sputtering. Electrolyte gating causes a large change in the film resistance that occurs immediately after the gate voltage is applied, and shows no hysteresis during the charging/discharging processes. When two devices are patterned next to one another and the first one gated through an electrolyte, the second one shows no changes in conductance, in contrast to what happens in materials (like tungsten oxide) susceptible to ionic electromigration and intercalation. These findings indicate that electrolyte gating in indium tin oxide triggers amore » pure electronic process (electron depletion or accumulation, depending on the polarity of the gate voltage), with no electrochemical reactions involved. Electron accumulation occurs in a very thin layer near the film surface, which becomes highly conductive. These results contribute to our understanding of the electrolyte gating mechanism in complex oxides and may be relevant for applications of electric double layer transistor devices.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moreno, Gilberto

Thermal modeling was conducted to evaluate and develop thermal management strategies for high-temperature wide-bandgap (WBG)-based power electronics systems. WBG device temperatures of 175 degrees C to 250 degrees C were modeled under various under-hood temperature environments. Modeling result were used to identify the most effective capacitor cooling strategies under high device temperature conditions.

Probing material conductivity in two-terminal devices by resistance difference

NASA Astrophysics Data System (ADS)

Lu, Yang; Chen, I.-Wei

2017-08-01

It is generally impossible in two-terminal devices to separate the resistance of the device material from the parasitic resistance of terminals, interfaces, and serial loads, yet such information is needed to understand device physics. Here, we present an exact resistance-difference analysis, for a library of similarly configured two-terminal devices with self-similar material responses to external perturbations (electric current, temperature, and magnetic field), to obtain the relative conductivity change Δσ/σ in the device material using device-resistance data only. An outstanding example is nanometallic Mo/Si3N4:Pt/Pt resistance memory, in which electrons in Si3N4:Pt—the device material—display entirely different physics from those in the Pt and Mo electrodes. Our method unraveled their individual Δσ/σ, which for Si3N4:Pt exhibits self-similarity over different resistance states and film thicknesses.

Large-Scale Stretchable Semiembedded Copper Nanowire Transparent Conductive Films by an Electrospinning Template.

PubMed

Yang, Xia; Hu, Xiaotian; Wang, Qingxia; Xiong, Jian; Yang, Hanjun; Meng, Xiangchuan; Tan, Licheng; Chen, Lie; Chen, Yiwang

2017-08-09

With recent emergence of wearable electronic devices, flexible and stretchable transparent electrodes are the core components to realize innovative devices. The copper nanowire (CuNW) network is commonly chosen because of its high conductivity and transparency. However, the junction resistances and low aspect ratios still limit its further stretchable performance. Herein, a large-scale stretchable semiembedded CuNW transparent conductive film (TCF) was fabricated by electrolessly depositing Cu on the electrospun poly(4-vinylpyridine) polymer template semiembedded in polydimethylsiloxane. Compared with traditional CuNWs, which are as-coated on the flexible substrate, the semiembedded CuNW TCFs showed low sheet resistance (15.6 Ω·sq -1 at ∼82% transmittance) as well as outstanding stretchability and mechanical stability. The light-emitting diode connected the stretchable semiembedded CuNW TCFs in the electric circuit still lighted up even after stretching with 25% strain. Moreover, this semiembedded CuNW TCF was successfully applied in polymer solar cells as a stretchable conductive electrode, which yielded a power conversion efficiency of 4.6% with 0.1 cm 2 effective area. The large-scale stretchable CuNW TCFs show potential for the development of wearable electronic devices.

Electronic and Morphological Inhomogeneities in Pristine and Deteriorated Perovskite Photovoltaic Films

DOE PAGES

Berweger, Samuel; MacDonald, Gordon A.; Yang, Mengjin; ...

2017-02-02

We perform scanning microwave microscopy (SMM) to study the spatially varying electronic properties and related morphology of pristine and degraded methylammonium lead-halide (MAPI) perovskite films fabricated under different ambient humidity. Here, we find that higher processing humidity leads to the emergence of increased conductivity at the grain boundaries but also correlates with the appearance of resistive grains that contain PbI 2. Deteriorated films show larger and increasingly insulating grain boundaries as well as spatially localized regions of reduced conductivity within grains. These results suggest that while humidity during film fabrication primarily benefits device properties due to the passivation of trapsmore » at the grain boundaries and self-doping, it also results in the emergence of PbI 2-containing grains. We further establish that MAPI film deterioration under ambient conditions proceeds via the spatially localized breakdown of film conductivity, both at grain boundaries and within grains, due to local variations in susceptibility to deterioration. These results confirm that PbI 2 has both beneficial and adverse effects on device performance and provide new means for device optimization by revealing spatial variations in sample conductivity as well as morphological differences in resistance to sample deterioration.« less

The effect of doping Sb on the electronic structure and the device characteristics of Ovonic Threshold Switches based on Ge-Se.

PubMed

Shin, Sang-Yeol; Choi, J M; Seo, Juhee; Ahn, Hyung-Woo; Choi, Yong Gyu; Cheong, Byung-ki; Lee, Suyoun

2014-11-18

The Ovonic Threshold Switch (OTS) based on an amorphous chalcogenide material has attracted much interest as a promising candidate for a high-performance thin-film switching device enabling 3D-stacking of memory devices. In this work, we studied on the electronic structure of amorphous Sb-doped Ge(0.6)Se(0.4) (in atomic mole fraction) film and its characteristics as to OTS devices. From the optical absorption spectroscopy measurement, the band gap (Eg) was found to decrease with increasing Sb content. In addition, as Sb content increased, the activation energy (Ea) for electrical conduction was found to decrease down to about one third of Eg from a half. As to the device characteristics, we found that the threshold switching voltage (Vth) drastically decreased with the Sb content. These results, being accountable in terms of the changes in the bonding configuration of constituent atoms as well as in the electronic structure such as the energy gap and trap states, advance an effective method of compositional adjustment to modulate Vth of an OTS device for various applications.

Analysis of Scanned Probe Images for Magnetic Focusing in Graphene

DOE PAGES

Bhandari, Sagar; Lee, Gil-Ho; Kim, Philip; ...

2017-02-21

We have used cooled scanning probe microscopy (SPM) to study electron motion in nanoscale devices. The charged tip of the microscope was raster-scanned at constant height above the surface as the conductance of the device was measured. The image charge scatters electrons away, changing the path of electrons through the sample. Using this technique, we imaged cyclotron orbits that flow between two narrow contacts in the magnetic focusing regime for ballistic hBN–graphene–hBN devices. We present herein an analysis of our magnetic focusing imaging results based on the effects of the tip-created charge density dip on the motion of ballistic electrons.more » The density dip locally reduces the Fermi energy, creating a force that pushes electrons away from the tip. When the tip is above the cyclotron orbit, electrons are deflected away from the receiving contact, creating an image by reducing the transmission between contacts. The data and our analysis suggest that the graphene edge is rather rough, and electrons scattering off the edge bounce in random directions. However, when the tip is close to the edge, it can enhance transmission by bouncing electrons away from the edge, toward the receiving contact. Our results demonstrate that cooled SPM is a promising tool to investigate the motion of electrons in ballistic graphene devices.« less

Analysis of Scanned Probe Images for Magnetic Focusing in Graphene

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bhandari, Sagar; Lee, Gil-Ho; Kim, Philip

We have used cooled scanning probe microscopy (SPM) to study electron motion in nanoscale devices. The charged tip of the microscope was raster-scanned at constant height above the surface as the conductance of the device was measured. The image charge scatters electrons away, changing the path of electrons through the sample. Using this technique, we imaged cyclotron orbits that flow between two narrow contacts in the magnetic focusing regime for ballistic hBN–graphene–hBN devices. We present herein an analysis of our magnetic focusing imaging results based on the effects of the tip-created charge density dip on the motion of ballistic electrons.more » The density dip locally reduces the Fermi energy, creating a force that pushes electrons away from the tip. When the tip is above the cyclotron orbit, electrons are deflected away from the receiving contact, creating an image by reducing the transmission between contacts. The data and our analysis suggest that the graphene edge is rather rough, and electrons scattering off the edge bounce in random directions. However, when the tip is close to the edge, it can enhance transmission by bouncing electrons away from the edge, toward the receiving contact. Our results demonstrate that cooled SPM is a promising tool to investigate the motion of electrons in ballistic graphene devices.« less

Probing Growth-Induced Anisotropic Thermal Transport in High-Quality CVD Diamond Membranes by Multifrequency and Multiple-Spot-Size Time-Domain Thermoreflectance.

PubMed

Cheng, Zhe; Bougher, Thomas; Bai, Tingyu; Wang, Steven Y; Li, Chao; Yates, Luke; Foley, Brian M; Goorsky, Mark; Cola, Baratunde A; Faili, Firooz; Graham, Samuel

2018-02-07

The maximum output power of GaN-based high-electron mobility transistors is limited by high channel temperature induced by localized self-heating, which degrades device performance and reliability. Chemical vapor deposition (CVD) diamond is an attractive candidate to aid in the extraction of this heat and in minimizing the peak operating temperatures of high-power electronics. Owing to its inhomogeneous structure, the thermal conductivity of CVD diamond varies along the growth direction and can differ between the in-plane and out-of-plane directions, resulting in a complex three-dimensional (3D) distribution. Depending on the thickness of the diamond and size of the electronic device, this 3D distribution may impact the effectiveness of CVD diamond in device thermal management. In this work, time-domain thermoreflectance is used to measure the anisotropic thermal conductivity of an 11.8 μm-thick high-quality CVD diamond membrane from its nucleation side. Starting with a spot-size diameter larger than the thickness of the membrane, measurements are made at various modulation frequencies from 1.2 to 11.6 MHz to tune the heat penetration depth and sample the variation in thermal conductivity. We then analyze the data by creating a model with the membrane divided into ten sublayers and assume isotropic thermal conductivity in each sublayer. From this, we observe a two-dimensional gradient of the depth-dependent thermal conductivity for this membrane. The local thermal conductivity goes beyond 1000 W/(m K) when the distance from the nucleation interface only reaches 3 μm. Additionally, by measuring the same region with a smaller spot size at multiple frequencies, the in-plane and cross-plane thermal conductivities are extracted. Through this use of multiple spot sizes and modulation frequencies, the 3D anisotropic thermal conductivity of CVD diamond membrane is experimentally obtained by fitting the experimental data to a thermal model. This work provides an improved understanding of thermal conductivity inhomogeneity in high-quality CVD polycrystalline diamond that is important for applications in the thermal management of high-power electronics.

Printable, flexible and stretchable diamond for thermal management

DOEpatents

Rogers, John A; Kim, Tae Ho; Choi, Won Mook; Kim, Dae Hyeong; Meitl, Matthew; Menard, Etienne; Carlisle, John

2013-06-25

Various heat-sinked components and methods of making heat-sinked components are disclosed where diamond in thermal contact with one or more heat-generating components are capable of dissipating heat, thereby providing thermally-regulated components. Thermally conductive diamond is provided in patterns capable of providing efficient and maximum heat transfer away from components that may be susceptible to damage by elevated temperatures. The devices and methods are used to cool flexible electronics, integrated circuits and other complex electronics that tend to generate significant heat. Also provided are methods of making printable diamond patterns that can be used in a range of devices and device components.

Thread-like supercapacitors based on one-step spun nanocomposite yarns.

PubMed

Meng, Qinghai; Wang, Kai; Guo, Wei; Fang, Jin; Wei, Zhixiang; She, Xilin

2014-08-13

Thread-like electronic devices have attracted great interest because of their potential applications in wearable electronics. To produce high-performance, thread-like supercapacitors, a mixture of stable dispersions of single-walled carbon nanotubes and conducting polyaniline nanowires are prepared. Then, the mixture is spun into flexible yarns with a polyvinyl alcohol outer sheath by a one-step spinning process. The composite yarns show excellent mechanical properties and high electrical conductivities after sufficient washing to remove surfactants. After applying a further coating layer of gel electrolyte, two flexible yarns are twisted together to form a thread-like supercapacitor. The supercapacitor based on these two yarns (SWCNTs and PAniNWs) possesses a much higher specific capacitance than that based only on pure SWCNTs yarns, making it an ideal energy-storage device for wearable electronics. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Laser-Assisted Reduction of Highly Conductive Circuits Based on Copper Nitrate for Flexible Printed Sensors

NASA Astrophysics Data System (ADS)

Bai, Shi; Zhang, Shigang; Zhou, Weiping; Ma, Delong; Ma, Ying; Joshi, Pooran; Hu, Anming

2017-10-01

Stretchable electronic sensing devices are defining the path toward wearable electronics. High-performance flexible strain sensors attached on clothing or human skin are required for potential applications in the entertainment, health monitoring, and medical care sectors. In this work, conducting copper electrodes were fabricated on polydimethylsiloxane as sensitive stretchable microsensors by integrating laser direct writing and transfer printing approaches. The copper electrode was reduced from copper salt using laser writing rather than the general approach of printing with pre-synthesized copper or copper oxide nanoparticles. An electrical resistivity of 96 μΩ cm was achieved on 40-μm-thick Cu electrodes on flexible substrates. The motion sensing functionality successfully demonstrated a high sensitivity and mechanical robustness. This in situ fabrication method leads to a path toward electronic devices on flexible substrates.[Figure not available: see fulltext.

Carbon Nanofiber versus Graphene‐Based Stretchable Capacitive Touch Sensors for Artificial Electronic Skin

PubMed Central

Dussoni, Simeone; Ceseracciu, Luca; Maggiali, Marco; Natale, Lorenzo; Metta, Giorgio; Athanassiou, Athanassia

2017-01-01

Abstract Stretchable capacitive devices are instrumental for new‐generation multifunctional haptic technologies particularly suited for soft robotics and electronic skin applications. A majority of elongating soft electronics still rely on silicone for building devices or sensors by multiple‐step replication. In this study, fabrication of a reliable elongating parallel‐plate capacitive touch sensor, using nitrile rubber gloves as templates, is demonstrated. Spray coating both sides of a rubber piece cut out of a glove with a conductive polymer suspension carrying dispersed carbon nanofibers (CnFs) or graphene nanoplatelets (GnPs) is sufficient for making electrodes with low sheet resistance values (≈10 Ω sq−1). The electrodes based on CnFs maintain their conductivity up to 100% elongation whereas the GnPs‐based ones form cracks before 60% elongation. However, both electrodes are reliable under elongation levels associated with human joints motility (≈20%). Strikingly, structural damages due to repeated elongation/recovery cycles could be healed through annealing. Haptic sensing characteristics of a stretchable capacitive device by wrapping it around the fingertip of a robotic hand (ICub) are demonstrated. Tactile forces as low as 0.03 N and as high as 5 N can be easily sensed by the device under elongation or over curvilinear surfaces. PMID:29619306

Carbon Nanofiber versus Graphene-Based Stretchable Capacitive Touch Sensors for Artificial Electronic Skin.

PubMed

Cataldi, Pietro; Dussoni, Simeone; Ceseracciu, Luca; Maggiali, Marco; Natale, Lorenzo; Metta, Giorgio; Athanassiou, Athanassia; Bayer, Ilker S

2018-02-01

Stretchable capacitive devices are instrumental for new-generation multifunctional haptic technologies particularly suited for soft robotics and electronic skin applications. A majority of elongating soft electronics still rely on silicone for building devices or sensors by multiple-step replication. In this study, fabrication of a reliable elongating parallel-plate capacitive touch sensor, using nitrile rubber gloves as templates, is demonstrated. Spray coating both sides of a rubber piece cut out of a glove with a conductive polymer suspension carrying dispersed carbon nanofibers (CnFs) or graphene nanoplatelets (GnPs) is sufficient for making electrodes with low sheet resistance values (≈10 Ω sq -1 ). The electrodes based on CnFs maintain their conductivity up to 100% elongation whereas the GnPs-based ones form cracks before 60% elongation. However, both electrodes are reliable under elongation levels associated with human joints motility (≈20%). Strikingly, structural damages due to repeated elongation/recovery cycles could be healed through annealing. Haptic sensing characteristics of a stretchable capacitive device by wrapping it around the fingertip of a robotic hand (ICub) are demonstrated. Tactile forces as low as 0.03 N and as high as 5 N can be easily sensed by the device under elongation or over curvilinear surfaces.

Influence of Thermal Annealing Treatment on Bipolar Switching Properties of Vanadium Oxide Thin-Film Resistance Random-Access Memory Devices

NASA Astrophysics Data System (ADS)

Chen, Kai-Huang; Cheng, Chien-Min; Kao, Ming-Cheng; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Wu, Sean; Su, Feng-Yi

2017-04-01

The bipolar switching properties and electrical conduction mechanism of vanadium oxide thin-film resistive random-access memory (RRAM) devices obtained using a rapid thermal annealing (RTA) process have been investigated in high-resistive status/low-resistive status (HRS/LRS) and are discussed herein. In addition, the resistance switching properties and quality improvement of the vanadium oxide thin-film RRAM devices were measured by x-ray diffraction (XRD) analysis, x-ray photoelectron spectrometry (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM), and current-voltage ( I- V) measurements. The activation energy of the hopping conduction mechanism in the devices was investigated based on Arrhenius plots in HRS and LRS. The hopping conduction distance and activation energy barrier were obtained as 12 nm and 45 meV, respectively. The thermal annealing process is recognized as a candidate method for fabrication of thin-film RRAM devices, being compatible with integrated circuit technology for nonvolatile memory devices.

Interfacing with the Brain using Organic Electronics

NASA Astrophysics Data System (ADS)

Malliaras, George

One of the most important scientific and technological frontiers of our time lies in the interface between electronics and the human brain. Interfacing the most advanced human engineering endeavor with nature's most refined creation promises to help elucidate aspects of the brain's working mechanism and deliver new tools for diagnosis and treatment of a host of pathologies including epilepsy and Parkinson's disease. Current solutions, however, are limited by the materials that are brought in contact with the tissue and transduce signals across the biotic/abiotic interface. The field of organic electronics has made available materials with a unique combination of attractive properties, including mechanical flexibility, mixed ionic/electronic conduction, enhanced biocompatibility, and capability for drug delivery. I will present examples of organic-based devices for recording and stimulation of brain activity, highlighting the connection between materials properties and device performance. I will show that organic electronic materials provide unparalleled opportunities to design devices that improve our understanding of brain physiology and pathology, and can be used to deliver new therapies.

Electrical control of charged carriers and excitons in atomically thin materials

NASA Astrophysics Data System (ADS)

Wang, Ke; De Greve, Kristiaan; Jauregui, Luis A.; Sushko, Andrey; High, Alexander; Zhou, You; Scuri, Giovanni; Taniguchi, Takashi; Watanabe, Kenji; Lukin, Mikhail D.; Park, Hongkun; Kim, Philip

2018-02-01

Electrical confinement and manipulation of charge carriers in semiconducting nanostructures are essential for realizing functional quantum electronic devices1-3. The unique band structure4-7 of atomically thin transition metal dichalcogenides (TMDs) offers a new route towards realizing novel 2D quantum electronic devices, such as valleytronic devices and valley-spin qubits8. 2D TMDs also provide a platform for novel quantum optoelectronic devices9-11 due to their large exciton binding energy12,13. However, controlled confinement and manipulation of electronic and excitonic excitations in TMD nanostructures have been technically challenging due to the prevailing disorder in the material, preventing accurate experimental control of local confinement and tunnel couplings14-16. Here we demonstrate a novel method for creating high-quality heterostructures composed of atomically thin materials that allows for efficient electrical control of excitations. Specifically, we demonstrate quantum transport in the gate-defined, quantum-confined region, observing spin-valley locked quantized conductance in quantum point contacts. We also realize gate-controlled Coulomb blockade associated with confinement of electrons and demonstrate electrical control over charged excitons with tunable local confinement potentials and tunnel couplings. Our work provides a basis for novel quantum opto-electronic devices based on manipulation of charged carriers and excitons.

Chemical Vapor Sensing with Monolayer MoS2

DTIC Science & Technology

2013-01-04

show great potential for future nanoscale electronic devices. The high surface-to-volume ratio is a natural asset for applications such as chemical...For the devices in this study, 3 bulk sources of MoS2 were used. One piece was obtained from a colleague’s tribology research project (called the...devices were ~20 cm2/Vs. Although the conductance of our monolayer MoS2 devices can be increased significantly by application of a back gate

Transparent and flexible resistive switching memory devices with a very high ON/OFF ratio using gold nanoparticles embedded in a silk protein matrix

NASA Astrophysics Data System (ADS)

Gogurla, Narendar; Mondal, Suvra P.; Sinha, Arun K.; Katiyar, Ajit K.; Banerjee, Writam; Kundu, Subhas C.; Ray, Samit K.

2013-08-01

The growing demand for biomaterials for electrical and optical devices is motivated by the need to make building blocks for the next generation of printable bio-electronic devices. In this study, transparent and flexible resistive memory devices with a very high ON/OFF ratio incorporating gold nanoparticles into the Bombyx mori silk protein fibroin biopolymer are demonstrated. The novel electronic memory effect is based on filamentary switching, which leads to the occurrence of bistable states with an ON/OFF ratio larger than six orders of magnitude. The mechanism of this process is attributed to the formation of conductive filaments through silk fibroin and gold nanoparticles in the nanocomposite. The proposed hybrid bio-inorganic devices show promise for use in future flexible and transparent nanoelectronic systems.

High-performance flexible resistive memory devices based on Al2O3:GeOx composite

NASA Astrophysics Data System (ADS)

Behera, Bhagaban; Maity, Sarmistha; Katiyar, Ajit K.; Das, Samaresh

2018-05-01

In this study a resistive switching random access memory device using Al2O3:GeOx composite thin films on flexible substrate is presented. A bipolar switching characteristic was observed for the co-sputter deposited Al2O3:GeOx composite thin films. Al/Al2O3:GeOx/ITO/PET memory device shows excellent ON/OFF ratio (∼104) and endurance (>500 cycles). GeOx nanocrystals embedded in the Al2O3 matrix have been found to play a significant role in enhancing the switching characteristics by facilitating oxygen vacancy formation. Mechanical endurance was retained even after several bending. The conduction mechanism of the device was qualitatively discussed by considering Ohmic and SCLC conduction. This flexible device is a potential candidate for next-generation electronics device.

Conductivity of an atomically defined metallic interface

PubMed Central

Oliver, David J.; Maassen, Jesse; El Ouali, Mehdi; Paul, William; Hagedorn, Till; Miyahara, Yoichi; Qi, Yue; Guo, Hong; Grütter, Peter

2012-01-01

A mechanically formed electrical nanocontact between gold and tungsten is a prototypical junction between metals with dissimilar electronic structure. Through atomically characterized nanoindentation experiments and first-principles quantum transport calculations, we find that the ballistic conduction across this intermetallic interface is drastically reduced because of the fundamental mismatch between s wave-like modes of electron conduction in the gold and d wave-like modes in the tungsten. The mechanical formation of the junction introduces defects and disorder, which act as an additional source of conduction losses and increase junction resistance by up to an order of magnitude. These findings apply to nanoelectronics and semiconductor device design. The technique that we use is very broadly applicable to molecular electronics, nanoscale contact mechanics, and scanning tunneling microscopy. PMID:23129661

Hydrogen doping in HfO{sub 2} resistance change random access memory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Duncan, D.; Magyari-Köpe, B.; Nishi, Y.

2016-01-25

The structures and energies of hydrogen-doped monoclinic hafnium dioxide were calculated using density-functional theory. The electronic interactions are described within the LDA + U formalism, where on-site Coulomb corrections are applied to the 5d orbital electrons of Hf atoms and 2p orbital electrons of the O atoms. The effects of charge state, defect-defect interactions, and hydrogenation are investigated and compared with experiment. It is found that hydrogenation of HfO{sub 2} resistance-change random access memory devices energetically stabilizes the formation of oxygen vacancies and conductive vacancy filaments through multiple mechanisms, leading to improved switching characteristic and device yield.

Electronic structure of clathrates Bax@AlySi46-y ; thermoelectric devices

NASA Astrophysics Data System (ADS)

Eguchi, Haruki; Nagano, Takatoshi; Takenaka, Hiroyuki; Tsumuraya, Kazuo

2002-03-01

Clathrates have received much attention as a candidate of high performance thermoelectric devices. This is because they have a) low thermal conductivity due to rattle effect of the alkali or heavy alkali-earth metals such as Ba atoms in the cages of clusters of the clathrates, and b) adjustablity of the Fermi levels through replacement of frame Si atoms with acceptor Al atoms and addition of the cage atoms as donors. We present the dispersion curves with LDA and GGA approximations for the exchange correlation of electrons using the planewave based pseudopotential methods and predict the electronic properties of the clathrates.

A dual channel three-terminal np-LDMOS with both majorities for conduction

NASA Astrophysics Data System (ADS)

Kong, Moufu; Yi, Bo; Zhang, Bingke

2018-02-01

A novel dual channel three-terminal np-LDMOS power device with both electrons and holes for conduction is proposed in this paper. Based on a new approach of inducing a large-signal which is processed by a simple circuit for controlling the gate of p-LDMOS inside the device, the new np-LDMOS only requires one external gate controlling voltage signal that can be performed as an n-LDMOS device. The SOA of the new device is improved in comparison with the n-LDMOS device, since the counteracting of electric flux density produced by the both type of carriers' currents. Furthermore, the specific on-resistance of the np-LDMOS device is reduced by about 19% when comparing with that of the conventional one. The control method and performances of the proposed power device are investigated and authenticated by numerical simulations.

Symposium N: Materials and Devices for Thermal-to-Electric Energy Conversion

DTIC Science & Technology

2010-08-24

X - ray diffraction, transmission electron microscopy, scanning electron microscopy, and dynamic light scattering. Thermal conductivity measurements...SEM), X - ray diffraction (XRD) measurements as well as Raman spectroscopy. The results from these techniques indicate a clear modification...was examined by using scanning electron microscope (SEM; HITACHI S-4500 model) attached with an energy dispersive x - ray spectroscopy. The electrical

Atomically Thin Femtojoule Memristive Device

DOE PAGES

Zhao, Huan; Dong, Zhipeng; Tian, He; ...

2017-10-25

The morphology and dimension of the conductive filament formed in a memristive device are strongly influenced by the thickness of its switching medium layer. Aggressive scaling of this active layer thickness is critical toward reducing the operating current, voltage, and energy consumption in filamentary-type memristors. Previously, the thickness of this filament layer has been limited to above a few nanometers due to processing constraints, making it challenging to further suppress the on-state current and the switching voltage. In this paper, the formation of conductive filaments in a material medium with sub-nanometer thickness formed through the oxidation of atomically thin two-dimensionalmore » boron nitride is studied. The resulting memristive device exhibits sub-nanometer filamentary switching with sub-pA operation current and femtojoule per bit energy consumption. Furthermore, by confining the filament to the atomic scale, current switching characteristics are observed that are distinct from that in thicker medium due to the profoundly different atomic kinetics. The filament morphology in such an aggressively scaled memristive device is also theoretically explored. Finally, these ultralow energy devices are promising for realizing femtojoule and sub-femtojoule electronic computation, which can be attractive for applications in a wide range of electronics systems that desire ultralow power operation.« less

Reconfigurable electronics using conducting metal-organic frameworks

DOEpatents

Allendorf, Mark D.; Talin, Albert Alec; Leonard, Francois; Stavila, Vitalie

2017-07-18

A device including a porous metal organic framework (MOF) disposed between two terminals, the device including a first state wherein the MOF is infiltrated by a guest species to form an electrical path between the terminals and a second state wherein the electrical conductivity of the MOF is less than the electrical conductivity in the first state. A method including switching a porous metal organic framework (MOF) between two terminals from a first state wherein a metal site in the MOF is infiltrated by a guest species that is capable of charge transfer to a second state wherein the MOF is less electrically conductive than in the first state.

Anomalous electron transport in metal/carbon multijunction devices by engineering of the carbon thickness and selecting metal layer

NASA Astrophysics Data System (ADS)

Dwivedi, Neeraj; Dhand, Chetna; Rawal, Ishpal; Kumar, Sushil; Malik, Hitendra K.; Lakshminarayanan, Rajamani

2017-06-01

A longstanding concern in the research of amorphous carbon films is their poor electrical conductivity at room temperature which constitutes a major barrier for the development of cost effective electronic and optoelectronic devices. Here, we propose metal/carbon hybrid multijunction devices as a promising facile way to overcome room temperature electron transport issues in amorphous carbon films. By the tuning of carbon thickness and swapping metal layers, we observe giant (upto ˜7 orders) reduction of electrical resistance in metal/carbon multijunction devices with respect to monolithic amorphous carbon device. We engineer the maximum current (electrical resistance) from about 10-7 to 10-3 A (˜107 to 103 Ω) in metal (Cu or Ti)/carbon hybrid multijunction devices with a total number of 10 junctions. The introduction of thin metal layers breaks the continuity of relatively higher resistance carbon layer as well as promotes the nanostructuring of carbon. These contribute to low electrical resistance of metal/carbon hybrid multijunction devices, with respect to monolithic carbon device, which is further reduced by decreasing the thickness of carbon layers. We also propose and discuss equivalent circuit model to explain electrical resistance in monolithic carbon and metal/carbon multijunction devices. Cu/carbon multijunction devices display relatively better electrical transport than Ti/carbon devices owing to low affinity of Cu with carbon that restricts carbide formation. We also observe that in metal/carbon multijunction devices, the transport mechanism changes from Poole-Frenkel/Schottky model to the hopping model with a decrease in carbon thickness. Our approach opens a new route to develop carbon-based inexpensive electronic and optoelectronic devices.

Current Trends in Sensors Based on Conducting Polymer Nanomaterials

PubMed Central

Yoon, Hyeonseok

2013-01-01

Conducting polymers represent an important class of functional organic materials for next-generation electronic and optical devices. Advances in nanotechnology allow for the fabrication of various conducting polymer nanomaterials through synthesis methods such as solid-phase template synthesis, molecular template synthesis, and template-free synthesis. Nanostructured conducting polymers featuring high surface area, small dimensions, and unique physical properties have been widely used to build various sensor devices. Many remarkable examples have been reported over the past decade. The enhanced sensitivity of conducting polymer nanomaterials toward various chemical/biological species and external stimuli has made them ideal candidates for incorporation into the design of sensors. However, the selectivity and stability still leave room for improvement. PMID:28348348

Atomistic simulations of highly conductive molecular transport junctions under realistic conditions

NASA Astrophysics Data System (ADS)

French, William R.; Iacovella, Christopher R.; Rungger, Ivan; Souza, Amaury Melo; Sanvito, Stefano; Cummings, Peter T.

2013-04-01

We report state-of-the-art atomistic simulations combined with high-fidelity conductance calculations to probe structure-conductance relationships in Au-benzenedithiolate (BDT)-Au junctions under elongation. Our results demonstrate that large increases in conductance are associated with the formation of monatomic chains (MACs) of Au atoms directly connected to BDT. An analysis of the electronic structure of the simulated junctions reveals that enhancement in the s-like states in Au MACs causes the increases in conductance. Other structures also result in increased conductance but are too short-lived to be detected in experiment, while MACs remain stable for long simulation times. Examinations of thermally evolved junctions with and without MACs show negligible overlap between conductance histograms, indicating that the increase in conductance is related to this unique structural change and not thermal fluctuation. These results, which provide an excellent explanation for a recently observed anomalous experimental result [Bruot et al., Nat. Nanotechnol., 2012, 7, 35-40], should aid in the development of mechanically responsive molecular electronic devices.We report state-of-the-art atomistic simulations combined with high-fidelity conductance calculations to probe structure-conductance relationships in Au-benzenedithiolate (BDT)-Au junctions under elongation. Our results demonstrate that large increases in conductance are associated with the formation of monatomic chains (MACs) of Au atoms directly connected to BDT. An analysis of the electronic structure of the simulated junctions reveals that enhancement in the s-like states in Au MACs causes the increases in conductance. Other structures also result in increased conductance but are too short-lived to be detected in experiment, while MACs remain stable for long simulation times. Examinations of thermally evolved junctions with and without MACs show negligible overlap between conductance histograms, indicating that the increase in conductance is related to this unique structural change and not thermal fluctuation. These results, which provide an excellent explanation for a recently observed anomalous experimental result [Bruot et al., Nat. Nanotechnol., 2012, 7, 35-40], should aid in the development of mechanically responsive molecular electronic devices. Electronic supplementary information (ESI) available. See DOI: 10.1039/c3nr00459g

Interface modulated currents in periodically proton exchanged Mg doped lithium niobate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Neumayer, Sabine M.; Rodriguez, Brian J., E-mail: brian.rodriguez@ucd.ie, E-mail: gallo@kth.se; Conway Institute of Biomolecular and Biomedical Research, University College Dublin, Belfield, Dublin 4

2016-03-21

Conductivity in Mg doped lithium niobate (Mg:LN) plays a key role in the reduction of photorefraction and is therefore widely exploited in optical devices. However, charge transport through Mg:LN and across interfaces such as electrodes also yields potential electronic applications in devices with switchable conductivity states. Furthermore, the introduction of proton exchanged (PE) phases in Mg:LN enhances ionic conductivity, thus providing tailorability of conduction mechanisms and functionality dependent on sample composition. To facilitate the construction and design of such multifunctional electronic devices based on periodically PE Mg:LN or similar ferroelectric semiconductors, fundamental understanding of charge transport in these materials, asmore » well as the impact of internal and external interfaces, is essential. In order to gain insight into polarization and interface dependent conductivity due to band bending, UV illumination, and chemical reactivity, wedge shaped samples consisting of polar oriented Mg:LN and PE phases were investigated using conductive atomic force microscopy. In Mg:LN, three conductivity states (on/off/transient) were observed under UV illumination, controllable by the polarity of the sample and the externally applied electric field. Measurements of currents originating from electrochemical reactions at the metal electrode–PE phase interfaces demonstrate a memresistive and rectifying capability of the PE phase. Furthermore, internal interfaces such as domain walls and Mg:LN–PE phase boundaries were found to play a major role in the accumulation of charge carriers due to polarization gradients, which can lead to increased currents. The insight gained from these findings yield the potential for multifunctional applications such as switchable UV sensitive micro- and nanoelectronic devices and bistable memristors.« less

Protein self-assembly onto nanodots leads to formation of conductive bio-based hybrids

PubMed Central

Hu, Xiao; Dong, Chenbo; Su, Rigu; Xu, Quan; Dinu, Cerasela Zoica

2016-01-01

The next generation of nanowires that could advance the integration of functional nanosystems into synthetic applications from photocatalysis to optical devices need to demonstrate increased ability to promote electron transfer at their interfaces while ensuring optimum quantum confinement. Herein we used the biological recognition and the self-assembly properties of tubulin, a protein involved in building the filaments of cellular microtubules, to create stable, free standing and conductive sulfur-doped carbon nanodots-based conductive bio-hybrids. The physical and chemical properties (e.g., composition, morphology, diameter etc.) of such user-synthesized hybrids were investigated using atomic and spectroscopic techniques, while the electron transfer rate was estimated using peak currents formed during voltammetry scanning. Our results demonstrate the ability to create individually hybrid nanowires capable to reduce energy losses; such hybrids could possibly be used in the future for the advancement and implementation into nanometer-scale functional devices. PMID:27922059

Conductors and semiconductors for advanced organic electronics

NASA Astrophysics Data System (ADS)

Meyer-Friedrichsen, Timo; Elschner, Andreas; Keohan, Frank; Lövenich, Wilfried; Ponomarenko, Sergei A.

2009-08-01

The development of suitable materials for organic electronics is still one of the key points to access new application areas with this promising technology. Semiconductors based on thiophene chemistry show very high charge carrier mobilities. The functionalization with linker groups provided materials that built monomolecular layers of the semiconductors on the hydrolyzed oxide surface of a silicon-wafer. This approach lead to self-assembled mono-layer field-effect transistors (SAM-FETs) with mobilities of up to 0.04 cm2/Vs, which is comparable to the values of the respective bulk thin film. Transparent inorganic conductors like ITO are highly conductive but the costly processing and the brittleness hamper their use in cost-sensitive and/or flexible devices. Highly conductive PEDOT-grades have been developed with conductivities of up to 1000 S/cm which are easily applicable by printing techniques and can be used as ITO replacement in devices such as touch panels or organic photovoltaics.

Fabrication of glass-ceramics containing spin-chain compound SrCuO{sub 2} and its high thermal conductivity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Terakado, Nobuaki, E-mail: terakado@laser.apph.tohoku.ac.jp; Watanabe, Kouki; Kawamata, Takayuki

2015-04-06

High thermal conductivity materials are in great demand for heat-flow control and heat dissipation in electronic devices. In this study, we have produced a glass-ceramics that contains spin-chain compound SrCuO{sub 2} and have found that the glass-ceramics yields high thermal conductivity of ∼5 W K{sup −1} m{sup −1} even at room temperature. The glass-ceramics is fabricated through crystallization of inhomogeneous melt-quenched oxides made from SrCO{sub 3}, CuO, Li{sub 2}CO{sub 3}, Ga{sub 2}O{sub 3}, and Al{sub 2}O{sub 3}. Transmission electron microscopy and X-ray and electron diffraction reveal that SrCuO{sub 2} crystallites with a size of 100–200 nm are precipitated in the glass-ceramics. Themore » highness of the thermal conductivity is attributable to two sources: one is elongation of phonon mean free path due to the crystallization of the inhomogeneous structure or structural ordering. The other is emergence of the heat carriers, spinons, in the SrCuO{sub 2}. This highly thermal conductive glass-ceramics is expected to be utilized as base materials for heat-flow control devices.« less

Bi-anchoring organic sensitizers of type D-(π-A)2 comprising thiophene-2-acetonitrile as π-spacer and malonic acid as electron acceptor for dye sensitized solar cell applications

NASA Astrophysics Data System (ADS)

Reddy, Gachumale Saritha; Ramkumar, Sekar; Asiri, Abdullah M.; Anandan, Sambandam

2015-06-01

Two new bi-anchoring organic sensitizers of type D-(π-A)2 comprising the identical π-spacer (thiophene-2-acetonitrile) and electron acceptor (malonic acid) but different aryl amine as electron donors (diphenylamine and carbazole) were synthesized, characterized and fabricated metal free dye-sensitized solar cell devices. The intra molecular charge transfer property and electrochemical property of these dyes were investigated by molecular absorption, emission, cyclic voltammetric experiments and in addition, quantum chemical calculation studies were performed to provide sufficient driving force for the electron injection into the conduction band of TiO2 which leads to efficient charge collection. Among the fabricated devices, carbazole based device exhibits high current conversion efficiency (η = 4.7%) with a short circuit current density (JSC) 15.3 mA/cm2, an open circuit photo voltage (VOC) of 0.59 V and a fill factor of 0.44 under AM 1.5 illumination (85 mW/cm2) compared to diphenylamine based device.

Atomic switch: atom/ion movement controlled devices for beyond von-neumann computers.

PubMed

Hasegawa, Tsuyoshi; Terabe, Kazuya; Tsuruoka, Tohru; Aono, Masakazu

2012-01-10

An atomic switch is a nanoionic device that controls the diffusion of metal ions/atoms and their reduction/oxidation processes in the switching operation to form/annihilate a conductive path. Since metal atoms can provide a highly conductive channel even if their cluster size is in the nanometer scale, atomic switches may enable downscaling to smaller than the 11 nm technology node, which is a great challenge for semiconductor devices. Atomic switches also possess novel characteristics, such as high on/off ratios, very low power consumption and non-volatility. The unique operating mechanisms of these devices have enabled the development of various types of atomic switch, such as gap-type and gapless-type two-terminal atomic switches and three-terminal atomic switches. Novel functions, such as selective volatile/nonvolatile, synaptic, memristive, and photo-assisted operations have been demonstrated. Such atomic switch characteristics can not only improve the performance of present-day electronic systems, but also enable development of new types of electronic systems, such as beyond von- Neumann computers. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

40 CFR 63.4967 - What are the requirements for continuous parameter monitoring system installation, operation, and...

Code of Federal Regulations, 2014 CFR

2014-07-01

..., or to temperature simulation devices. (vi) Conduct a visual inspection of each sensor every quarter... sensor values with electronic signal simulations or via relative accuracy testing. (v) Perform accuracy... values with electronic signal simulations or with values obtained via relative accuracy testing. (vi...

40 CFR 63.4967 - What are the requirements for continuous parameter monitoring system installation, operation, and...

Code of Federal Regulations, 2013 CFR

2013-07-01

..., or to temperature simulation devices. (vi) Conduct a visual inspection of each sensor every quarter... sensor values with electronic signal simulations or via relative accuracy testing. (v) Perform accuracy... values with electronic signal simulations or with values obtained via relative accuracy testing. (vi...

40 CFR 63.4967 - What are the requirements for continuous parameter monitoring system installation, operation, and...

Code of Federal Regulations, 2012 CFR

2012-07-01

..., or to temperature simulation devices. (vi) Conduct a visual inspection of each sensor every quarter... sensor values with electronic signal simulations or via relative accuracy testing. (v) Perform accuracy... values with electronic signal simulations or with values obtained via relative accuracy testing. (vi...

Analysis of a High-Tc Hot-Electron Superconducting Mixer for Terahertz Applications

NASA Technical Reports Server (NTRS)

Karasik, B. S.; McGrath, W. R.; Gaidis, M. C.

1996-01-01

The prospects of a YBa2Cu3O7(delta)(YBCO) hot-electron bolometer (HEB) mixer for a THz heterodyne receiver is discussed. The modeled device is a submicron bridge made from a 10 nm thick film on a high thermal conductance substrate.

Microwave Semiconductor Research - Materials, Devices and Circuits and Gallium Arsenide Ballistic Electron Transistors.

DTIC Science & Technology

1985-04-01

activation energies than previously possible. Electron traps and hole traps with energies less than 50 meV were observed for the first time in GaAs...developed in our laboratory to photoexcite electrons in a given energy range in the conduction band and then measure the relaxation of these carriers...limitations on the electron energy may be required. CURRENT AND FUTURE EFFORTS The possibility of ballistic electron transport in gallium arsenide has been

Rational design of metal-organic electronic devices: A computational perspective

NASA Astrophysics Data System (ADS)

Chilukuri, Bhaskar

Organic and organometallic electronic materials continue to attract considerable attention among researchers due to their cost effectiveness, high flexibility, low temperature processing conditions and the continuous emergence of new semiconducting materials with tailored electronic properties. In addition, organic semiconductors can be used in a variety of important technological devices such as solar cells, field-effect transistors (FETs), flash memory, radio frequency identification (RFID) tags, light emitting diodes (LEDs), etc. However, organic materials have thus far not achieved the reliability and carrier mobility obtainable with inorganic silicon-based devices. Hence, there is a need for finding alternative electronic materials other than organic semiconductors to overcome the problems of inferior stability and performance. In this dissertation, I research the development of new transition metal based electronic materials which due to the presence of metal-metal, metal-pi, and pi-pi interactions may give rise to superior electronic and chemical properties versus their organic counterparts. Specifically, I performed computational modeling studies on platinum based charge transfer complexes and d 10 cyclo-[M(mu-L)]3 trimers (M = Ag, Au and L = monoanionic bidentate bridging (C/N~C/N) ligand). The research done is aimed to guide experimental chemists to make rational choices of metals, ligands, substituents in synthesizing novel organometallic electronic materials. Furthermore, the calculations presented here propose novel ways to tune the geometric, electronic, spectroscopic, and conduction properties in semiconducting materials. In addition to novel material development, electronic device performance can be improved by making a judicious choice of device components. I have studied the interfaces of a p-type metal-organic semiconductor viz cyclo-[Au(mu-Pz)] 3 trimer with metal electrodes at atomic and surface levels. This work was aimed to guide the device engineers to choose the appropriate metal electrodes considering the chemical interactions at the interface. Additionally, the calculations performed on the interfaces provided valuable insight into binding energies, charge redistribution, change in the energy levels, dipole formation, etc., which are important parameters to consider while fabricating an electronic device. The research described in this dissertation highlights the application of unique computational modeling methods at different levels of theory to guide the experimental chemists and device engineers toward a rational design of transition metal based electronic devices with low cost and high performance.

Segmented cold cathode display panel

NASA Technical Reports Server (NTRS)

Payne, Leslie (Inventor)

1998-01-01

The present invention is a video display device that utilizes the novel concept of generating an electronically controlled pattern of electron emission at the output of a segmented photocathode. This pattern of electron emission is amplified via a channel plate. The result is that an intense electronic image can be accelerated toward a phosphor thus creating a bright video image. This novel arrangement allows for one to provide a full color flat video display capable of implementation in large formats. In an alternate arrangement, the present invention is provided without the channel plate and a porous conducting surface is provided instead. In this alternate arrangement, the brightness of the image is reduced but the cost of the overall device is significantly lowered because fabrication complexity is significantly decreased.

Flexible Transparent Electronic Gas Sensors.

PubMed

Wang, Ting; Guo, Yunlong; Wan, Pengbo; Zhang, Han; Chen, Xiaodong; Sun, Xiaoming

2016-07-01

Flexible and transparent electronic gas sensors capable of real-time, sensitive, and selective analysis at room-temperature, have gained immense popularity in recent years for their potential to be integrated into various smart wearable electronics and display devices. Here, recent advances in flexible transparent sensors constructed from semiconducting oxides, carbon materials, conducting polymers, and their nanocomposites are presented. The sensing material selection, sensor device construction, and sensing mechanism of flexible transparent sensors are discussed in detail. The critical challenges and future development associated with flexible and transparent electronic gas sensors are presented. Smart wearable gas sensors are believed to have great potential in environmental monitoring and noninvasive health monitoring based on disease biomarkers in exhaled gas. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

In vivo polymerization and manufacturing of wires and supercapacitors in plants

PubMed Central

Stavrinidou, Eleni; Nilsson, K. Peter R.; Singh, Sandeep Kumar; Franco-Gonzalez, Juan Felipe; Volkov, Anton V.; Jonsson, Magnus P.; Grimoldi, Andrea; Elgland, Mathias; Zozoulenko, Igor V.; Berggren, Magnus

2017-01-01

Electronic plants, e-Plants, are an organic bioelectronic platform that allows electronic interfacing with plants. Recently we have demonstrated plants with augmented electronic functionality. Using the vascular system and organs of a plant, we manufactured organic electronic devices and circuits in vivo, leveraging the internal structure and physiology of the plant as the template, and an integral part of the devices. However, this electronic functionality was only achieved in localized regions, whereas new electronic materials that could be distributed to every part of the plant would provide versatility in device and circuit fabrication and create possibilities for new device concepts. Here we report the synthesis of such a conjugated oligomer that can be distributed and form longer oligomers and polymer in every part of the xylem vascular tissue of a Rosa floribunda cutting, forming long-range conducting wires. The plant’s structure acts as a physical template, whereas the plant’s biochemical response mechanism acts as the catalyst for polymerization. In addition, the oligomer can cross through the veins and enter the apoplastic space in the leaves. Finally, using the plant’s natural architecture we manufacture supercapacitors along the stem. Our results are preludes to autonomous energy systems integrated within plants and distribute interconnected sensor–actuator systems for plant control and optimization. PMID:28242683

In vivo polymerization and manufacturing of wires and supercapacitors in plants.

PubMed

Stavrinidou, Eleni; Gabrielsson, Roger; Nilsson, K Peter R; Singh, Sandeep Kumar; Franco-Gonzalez, Juan Felipe; Volkov, Anton V; Jonsson, Magnus P; Grimoldi, Andrea; Elgland, Mathias; Zozoulenko, Igor V; Simon, Daniel T; Berggren, Magnus

2017-03-14

Electronic plants, e -Plants, are an organic bioelectronic platform that allows electronic interfacing with plants. Recently we have demonstrated plants with augmented electronic functionality. Using the vascular system and organs of a plant, we manufactured organic electronic devices and circuits in vivo, leveraging the internal structure and physiology of the plant as the template, and an integral part of the devices. However, this electronic functionality was only achieved in localized regions, whereas new electronic materials that could be distributed to every part of the plant would provide versatility in device and circuit fabrication and create possibilities for new device concepts. Here we report the synthesis of such a conjugated oligomer that can be distributed and form longer oligomers and polymer in every part of the xylem vascular tissue of a Rosa floribunda cutting, forming long-range conducting wires. The plant's structure acts as a physical template, whereas the plant's biochemical response mechanism acts as the catalyst for polymerization. In addition, the oligomer can cross through the veins and enter the apoplastic space in the leaves. Finally, using the plant's natural architecture we manufacture supercapacitors along the stem. Our results are preludes to autonomous energy systems integrated within plants and distribute interconnected sensor-actuator systems for plant control and optimization.

Electron transport in single molecules: from benzene to graphene.

PubMed

Chen, F; Tao, N J

2009-03-17

Electron movement within and between molecules--that is, electron transfer--is important in many chemical, electrochemical, and biological processes. Recent advances, particularly in scanning electrochemical microscopy (SECM), scanning-tunneling microscopy (STM), and atomic force microscopy (AFM), permit the study of electron movement within single molecules. In this Account, we describe electron transport at the single-molecule level. We begin by examining the distinction between electron transport (from semiconductor physics) and electron transfer (a more general term referring to electron movement between donor and acceptor). The relation between these phenomena allows us to apply our understanding of single-molecule electron transport between electrodes to a broad range of other electron transfer processes. Electron transport is most efficient when the electron transmission probability via a molecule reaches 100%; the corresponding conductance is then 2e(2)/h (e is the charge of the electron and h is the Planck constant). This ideal conduction has been observed in a single metal atom and a string of metal atoms connected between two electrodes. However, the conductance of a molecule connected to two electrodes is often orders of magnitude less than the ideal and strongly depends on both the intrinsic properties of the molecule and its local environment. Molecular length, means of coupling to the electrodes, the presence of conjugated double bonds, and the inclusion of possible redox centers (for example, ferrocene) within the molecular wire have a pronounced effect on the conductance. This complex behavior is responsible for diverse chemical and biological phenomena and is potentially useful for device applications. Polycyclic aromatic hydrocarbons (PAHs) afford unique insight into electron transport in single molecules. The simplest one, benzene, has a conductance much less than 2e(2)/h due to its large LUMO-HOMO gap. At the other end of the spectrum, graphene sheets and carbon nanotubes--consisting of infinite numbers of aromatic rings--have small or even zero energy gaps between the conduction and valence bands. Between these two limits are intermediate molecules with rich properties, such as perylene derivatives made of seven aromatic rings; the properties of these types of molecules have yet to be fully explored. Studying PAHs is important not only in answering fundamental questions about electron transport but also in the ongoing quest for molecular-scale electronic devices. This line of research also helps bridge the gap between electron transfer phenomena in small redox molecules and electron transport properties in nanostructures.

Protein bioelectronics: a review of what we do and do not know

NASA Astrophysics Data System (ADS)

Bostick, Christopher D.; Mukhopadhyay, Sabyasachi; Pecht, Israel; Sheves, Mordechai; Cahen, David; Lederman, David

2018-02-01

We review the status of protein-based molecular electronics. First, we define and discuss fundamental concepts of electron transfer and transport in and across proteins and proposed mechanisms for these processes. We then describe the immobilization of proteins to solid-state surfaces in both nanoscale and macroscopic approaches, and highlight how different methodologies can alter protein electronic properties. Because immobilizing proteins while retaining biological activity is crucial to the successful development of bioelectronic devices, we discuss this process at length. We briefly discuss computational predictions and their connection to experimental results. We then summarize how the biological activity of immobilized proteins is beneficial for bioelectronic devices, and how conductance measurements can shed light on protein properties. Finally, we consider how the research to date could influence the development of future bioelectronic devices.

Imaging quantum transport using scanning gate microscopy

NASA Astrophysics Data System (ADS)

Hackens, Benoit

2014-03-01

Quantum transport in nanodevices is usually probed thanks to measurements of the electrical resistance or conductance, which lack the spatial resolution necessary to probe electron behaviour inside the devices. In this talk, we will show that scanning gate microscopy (SGM) yields real-space images of quantum transport phenomena inside archetypal mesoscopic devices such as quantum point contacts and quantum rings. We will first discuss the SGM technique, which is based on mapping the electrical conductance of a device as an electrically-biased sharp metallic tip scans in its vicinity. With SGM, we demonstrated low temperature imaging of the electron probability density and interferences in embedded mesoscopic quantum rings [B. Hackens et al., Nat. Phys. 2, 826 (2006)]. At high magnetic field, thanks to the SGM conductance maps, one can decrypt complex transport phenomena such as tunneling between quantum Hall edge state, either direct or through localized states [B. Hackens et al., Nat. Comm. 1, 39 (2010)]. Moreover, the technique also allows to perform local spectroscopy of electron transport through selected localized states [F. Martins et al., New J. of Phys. 15, 013049 (2013); F. Martins et al., Sci. Rep. 3, 1416 (2013)]. Overall, these examples show that scanning gate microscopy is a powerful tool for imaging charge carrier behavior inside devices fabricated from a variety of materials, and opens the way towards a more intimate manipulation of charge and quasiparticle transport. This work was performed in collaboration with F. Martins, S. Faniel, B. Brun, M. Pala, X. Wallart, L. Desplanque, B. Rosenow, T. Ouisse, H. Sellier, S. Huant and V. Bayot.

Counter-ion and dopant effects on charge carriers in intrinsically conductive polymer

NASA Astrophysics Data System (ADS)

Ogle, Jonathan; Yehulie, Mandefro; Boehme, Christoph; Whittaker-Brooks, Luisa

Recently, a significant amount of attention has been devoted to the optimization and applications of organic electronics. In particular, intrinsically conductive polymers have seen a strong continued interest for their use in thermoelectric and photovoltaic devices. With conductivities ranging from 10-8 to 103 S cm-1, the conductive polymer poly(3,4-ethylenedioxythiophene) -PEDOT is one of the most studied solution-processable polymer material due to its unique optical and electronic properties. While charge carriers at lower conductivities have been identified as polarons, an understanding of the electronic structure of PEDOT as its conductivity increases is not well understood. We have investigated the effect that counter-ion exchange and doping has on the polaron concentration of PEDOT via electron paramagnetic resonance, ultraviolet photoelectron spectroscopy, and X-ray absorption fine structure spectroscopy studies. Such studies have allowed us to correlate charge carriers concentrations and the real and virtual electronic states in PEDOT as a function of various dopants. As discussed in our talk, we believe our findings could be extended to the understanding of other polymeric materials.

Understanding Local and Macroscopic Electron Mobilities in the Fullerene Network of Conjugated Polymer-based Solar Cells. Time-Resolved Microwave Conductivity and Theory

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aguirre, Jordan C.; Arntsen, Christopher D.; Hernandez, Samuel

2013-09-23

The efficiency of bulk heterojunction (BHJ) organic photovoltaics is sensitive to the morphology of the fullerene network that transports electrons through the device. This sensitivity makes it difficult to distinguish the contrasting roles of local electron mobility (how easily electrons can transfer between neighboring fullerene molecules) and macroscopic electron mobility (how well-connected is the fullerene network on device length scales) in solar cell performance. In this work, a combination of density functional theory (DFT) calculations, flash-photolysis time-resolved microwave conductivity (TRMC) experiments, and space-charge-limit current (SCLC) mobility estimates are used to examine the roles of local and macroscopic electron mobility inmore » conjugated polymer/fullerene BHJ photovoltaics. The local mobility of different pentaaryl fullerene derivatives (so-called ‘shuttlecock’ molecules) is similar, so that differences in solar cell efficiency and SCLC mobilities result directly from the different propensities of these molecules to self-assemble on macroscopic length scales. These experiments and calculations also demonstrate that the local mobility of phenyl-C60 butyl methyl ester (PCBM) is an order of magnitude higher than that of other fullerene derivatives, explaining why PCBM has been the acceptor of choice for conjugated polymer BHJ devices even though it does not form an optimal macroscopic network. The DFT calculations indicate that PCBM's superior local mobility comes from the near-spherical nature of its molecular orbitals, which allow strong electronic coupling between adjacent molecules. In combination, DFT and TRMC techniques provide a tool for screening new fullerene derivatives for good local mobility when designing new molecules that can improve on the macroscopic electron mobility offered by PCBM.« less

Bacteriorhodopsin as an electronic conduction medium for biomolecular electronics.

PubMed

Jin, Yongdong; Honig, Tal; Ron, Izhar; Friedman, Noga; Sheves, Mordechai; Cahen, David

2008-11-01

Interfacing functional proteins with solid supports for device applications is a promising route to possible applications in bio-electronics, -sensors, and -optics. Various possible applications of bacteriorhodopsin (bR) have been explored and reviewed since the discovery of bR. This tutorial review discusses bR as a medium for biomolecular optoelectronics, emphasizing ways in which it can be interfaced, especially as a thin film, solid-state current-carrying electronic element.

Mobile technology in radiology resident education.

PubMed

Korbage, Aiham C; Bedi, Harprit S

2012-06-01

The authors hypothesized that ownership of a mobile electronic device would result in more time spent learning radiology. Current trends in radiology residents' studying habits, their use of electronic and printed radiology learning resources, and how much of the funds allotted to them are being used toward printed vs electronic education tools were assessed in this study. A survey study was conducted among radiology residents across the United States from June 13 to July 5, 2011. Program directors listed in the Association of Program Directors in Radiology e-mail list server received an e-mail asking for residents to participate in an online survey. The questionnaire consisted of 12 questions and assessed the type of institution, the levels of training of the respondents, and book funds allocated to residents. It also assessed the residents' study habits, access to portable devices, and use of printed and electronic radiology resources. Radiology residents are adopters of new technologies, with 74% owning smart phones and 37% owning tablet devices. Respondents spend nearly an equal amount of time learning radiology from printed textbooks as they do from electronic resources. Eighty-one percent of respondents believe that they would spend more time learning radiology if provided with tablet devices. There is considerable use of online and electronic resources and mobile devices among the current generation of radiology residents. Benefits, such as more study time, may be obtained by radiology programs that incorporate tablet devices into the education of their residents. Copyright © 2012 American College of Radiology. Published by Elsevier Inc. All rights reserved.

Negative differential conductance in doped-silicon nanoscale devices with superconducting electrodes

NASA Astrophysics Data System (ADS)

Shapovalov, A.; Shaternik, V.; Suvorov, O.; Zhitlukhina, E.; Belogolovskii, M.

2018-02-01

We present a proof-of-concept nanoelectronics device with a negative differential conductance, an attractive from the applied viewpoint functionality. The device, characterized by the decreasing current with increasing voltage in a certain voltage region above a threshold bias of about several hundred millivolts, consists of two superconducting electrodes with an amorphous 10-nm-thick silicon interlayer doped by tungsten nano-inclusions. We show that small changes in the W content radically modify the shape of the trilayer current-voltage dependence and identify sudden conductance switching at a threshold voltage as an effect of Andreev fluctuators. The latter entities are two-level systems at the superconductor-doped silicon interface where a Cooper pair tunnels from a superconductor and occupies a pair of localized electronic states. We argue that in contrast to previously proposed devices, our samples permit very large-scale integration and are practically feasible.

Investigation of the optical and electrical characteristics of solution-processed poly (3 hexylthiophene) (P3HT): multiwall carbon nanotube (MWCNT) composite-based devices

NASA Astrophysics Data System (ADS)

Rathore, Priyanka; Mohan Singh Negi, Chandra; Singh Verma, Ajay; Singh, Amarjeet; Chauhan, Gayatri; Regis Inigo, Anto; Gupta, Saral K.

2017-08-01

Devices comprised of solution-processed poly (3-hexylthiophene) (P3HT)/multiwall carbon nanotubes (MWCNTs), with various concentrations of MWCNTs, were fabricated and characterized. The morphology of the P3HT: MWCNT nanocomposite was characterized by using field emission scanning electron microscopy (FESEM). The optical characteristics of the nanocomposite were studied by UV/VIS/NIR spectroscopy and Raman spectroscopy. The electrical properties of the fabricated devices were characterized by measuring the current density-voltage (J-V) characteristics. While the J-V characteristics of a pristine P3HT device reveal thermal injection limited charge transport, the P3HT: MWCNT nanocomposite-based devices exhibit three distinct voltage-dependent conduction regimes. The fitting curve with measured data reveals Ohmic conduction for a low voltage range, a trap-charge limited conduction (TCLC) process at an intermediate voltage range followed by a trap free space-charge limited conduction (SCLC) process at much higher voltages. A fundamental understanding of this work can assist in creating new charge transport pathways which will provide new avenues for the development of highly efficient polymer-based optoelectronic devices.

Low-power resistive random access memory by confining the formation of conducting filaments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Yi-Jen; Lee, Si-Chen, E-mail: sclee@ntu.edu.tw; Shen, Tzu-Hsien

2016-06-15

Owing to their small physical size and low power consumption, resistive random access memory (RRAM) devices are potential for future memory and logic applications in microelectronics. In this study, a new resistive switching material structure, TiO{sub x}/silver nanoparticles/TiO{sub x}/AlTiO{sub x}, fabricated between the fluorine-doped tin oxide bottom electrode and the indium tin oxide top electrode is demonstrated. The device exhibits excellent memory performances, such as low operation voltage (<±1 V), low operation power, small variation in resistance, reliable data retention, and a large memory window. The current-voltage measurement shows that the conducting mechanism in the device at the high resistancemore » state is via electron hopping between oxygen vacancies in the resistive switching material. When the device is switched to the low resistance state, conducting filaments are formed in the resistive switching material as a result of accumulation of oxygen vacancies. The bottom AlTiO{sub x} layer in the device structure limits the formation of conducting filaments; therefore, the current and power consumption of device operation are significantly reduced.« less

Graphene-Carbon-Metal Composite Film for a Flexible Heat Sink.

PubMed

Cho, Hyunjin; Rho, Hokyun; Kim, Jun Hee; Chae, Su-Hyeong; Pham, Thang Viet; Seo, Tae Hoon; Kim, Hak Yong; Ha, Jun-Seok; Kim, Hwan Chul; Lee, Sang Hyun; Kim, Myung Jong

2017-11-22

The heat generated from electronic devices such as light emitting diodes (LEDs), batteries, and highly integrated transistors is one of the major causes obstructing the improvement of their performance and reliability. Herein, we report a comprehensive method to dissipate the generated heat to a vast area by using the new type of graphene-carbon-metal composite film as a heat sink. The unique porous graphene-carbon-metal composite film that consists of an electrospun carbon nanofiber with arc-graphene (Arc-G) fillers and an electrochemically deposited copper (Cu) layer showed not only high electrical and thermal conductivity but also high mechanical stability. Accordingly, superior thermal management of LED devices to that of conventional Cu plates and excellent resistance stability during the repeated 10 000 bending cycles has been achieved. The heat dissipation of LEDs has been enhanced by the high heat conduction in the composite film, heat convection in the air flow, and thermal radiation at low temperature in the porous carbon structure. This result reveals that the graphene-carbon-metal composite film is one of the most promising materials for a heat sink of electronic devices in modern electronics.

The Software Element of the NASA Portable Electronic Device Radiated Emissions Investigation

NASA Technical Reports Server (NTRS)

Koppen, Sandra V.; Williams, Reuben A. (Technical Monitor)

2002-01-01

NASA Langley Research Center's (LaRC) High Intensity Radiated Fields Laboratory (HIRF Lab) recently conducted a series of electromagnetic radiated emissions tests under a cooperative agreement with Delta Airlines and an interagency agreement with the FAA. The frequency spectrum environment at a commercial airport was measured on location. The environment survey provides a comprehensive picture of the complex nature of the electromagnetic environment present in those areas outside the aircraft. In addition, radiated emissions tests were conducted on portable electronic devices (PEDs) that may be brought onboard aircraft. These tests were performed in both semi-anechoic and reverberation chambers located in the HIRF Lab. The PEDs included cell phones, laptop computers, electronic toys, and family radio systems. The data generated during the tests are intended to support the research on the effect of radiated emissions from wireless devices on aircraft systems. Both tests systems relied on customized control and data reduction software to provide test and instrument control, data acquisition, a user interface, real time data reduction, and data analysis. The software executed on PC's running MS Windows 98 and 2000, and used Agilent Pro Visual Engineering Environment (VEE) development software, Common Object Model (COM) technology, and MS Excel.

Effects of nanoscale vacuum gap on photon-enhanced thermionic emission devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Yuan; Liao, Tianjun; Zhang, Yanchao

2016-01-28

A new model of the photon-enhanced thermionic emission (PETE) device with a nanoscale vacuum gap is established by introducing the quantum tunneling effect and the image force correction. Analytic expressions for both the thermionic emission and tunneling currents are derived. The electron concentration and the temperature of the cathode are determined by the particle conservation and energy balance equations. The effects of the operating voltage on the maximum potential barrier, cathode temperature, electron concentration and equilibrium electron concentration of the conduction band, and efficiency of the PETE device are discussed in detail for different given values of the vacuum gapmore » length. The influence of the band gap of the cathode and flux concentration on the efficiency is further analyzed. The maximum efficiency of the PETE and the corresponding optimum values of the band gap and the operating voltage are determined. The results obtained here show that the efficiency of the PETE device can be significantly improved by employing a nanoscale vacuum gap.« less

A lightweight scalable agarose-gel-synthesized thermoelectric composite

NASA Astrophysics Data System (ADS)

Kim, Jin Ho; Fernandes, Gustavo E.; Lee, Do-Joong; Hirst, Elizabeth S.; Osgood, Richard M., III; Xu, Jimmy

2018-03-01

Electronic devices are now advancing beyond classical, rigid systems and moving into lighweight flexible regimes, enabling new applications such as body-wearables and ‘e-textiles’. To support this new electronic platform, composite materials that are highly conductive yet scalable, flexible, and wearable are needed. Materials with high electrical conductivity often have poor thermoelectric properties because their thermal transport is made greater by the same factors as their electronic conductivity. We demonstrate, in proof-of-principle experiments, that a novel binary composite can disrupt thermal (phononic) transport, while maintaining high electrical conductivity, thus yielding promising thermoelectric properties. Highly conductive Multi-Wall Carbon Nanotube (MWCNT) composites are combined with a low-band gap semiconductor, PbS. The work functions of the two materials are closely matched, minimizing the electrical contact resistance within the composite. Disparities in the speed of sound in MWCNTs and PbS help to inhibit phonon propagation, and boundary layer scattering at interfaces between these two materials lead to large Seebeck coefficient (> 150 μV/K) (Mott N F and Davis E A 1971 Electronic Processes in Non-crystalline Materials (Oxford: Clarendon), p 47) and a power factor as high as 10 μW/(K2 m). The overall fabrication process is not only scalable but also conformal and compatible with large-area flexible hosts including metal sheets, films, coatings, possibly arrays of fibers, textiles and fabrics. We explain the behavior of this novel thermoelectric material platform in terms of differing length scales for electrical conductivity and phononic heat transfer, and explore new material configurations for potentially lightweight and flexible thermoelectric devices that could be networked in a textile.

Thermal management in MoS2 based integrated device using near-field radiation

NASA Astrophysics Data System (ADS)

Peng, Jiebin; Zhang, Gang; Li, Baowen

2015-09-01

Recently, wafer-scale growth of monolayer MoS2 films with spatial homogeneity is realized on SiO2 substrate. Together with the latest reported high mobility, MoS2 based integrated electronic devices are expected to be fabricated in the near future. Owing to the low lattice thermal conductivity in monolayer MoS2, and the increased transistor density accompanied with the increased power density, heat dissipation will become a crucial issue for these integrated devices. In this letter, using the formalism of fluctuation electrodynamics, we explored the near-field radiative heat transfer from a monolayer MoS2 to graphene. We demonstrate that in resonance, the maximum heat transfer via near-field radiation between MoS2 and graphene can be ten times higher than the in-plane lattice thermal conduction for MoS2 sheet. Therefore, an efficient thermal management strategy for MoS2 integrated device is proposed: Graphene sheet is brought into close proximity, 10-20 nm from MoS2 device; heat energy transfer from MoS2 to graphene via near-field radiation; this amount of heat energy then be conducted to contact due to ultra-high lattice thermal conductivity of graphene. Our work sheds light for developing cooling strategy for nano devices constructing with low thermal conductivity materials.

Tri-state resistive switching characteristics of MnO/Ta2O5 resistive random access memory device by a controllable reset process

NASA Astrophysics Data System (ADS)

Lee, N. J.; Kang, T. S.; Hu, Q.; Lee, T. S.; Yoon, T.-S.; Lee, H. H.; Yoo, E. J.; Choi, Y. J.; Kang, C. J.

2018-06-01

Tri-state resistive switching characteristics of bilayer resistive random access memory devices based on manganese oxide (MnO)/tantalum oxide (Ta2O5) have been studied. The current–voltage (I–V) characteristics of the Ag/MnO/Ta2O5/Pt device show tri-state resistive switching (RS) behavior with a high resistance state (HRS), intermediate resistance state (IRS), and low resistance state (LRS), which are controlled by the reset process. The MnO/Ta2O5 film shows bipolar RS behavior through the formation and rupture of conducting filaments without the forming process. The device shows reproducible and stable RS both from the HRS to the LRS and from the IRS to the LRS. In order to elucidate the tri-state RS mechanism in the Ag/MnO/Ta2O5/Pt device, transmission electron microscope (TEM) images are measured in the LRS, IRS and HRS. White lines like dendrites are observed in the Ta2O5 film in both the LRS and the IRS. Poole–Frenkel conduction, space charge limited conduction, and Ohmic conduction are proposed as the dominant conduction mechanisms for the Ag/MnO/Ta2O5/Pt device based on the obtained I–V characteristics and TEM images.

Smallest fullerene-like clusters in two-probe device junctions: first principle study

NASA Astrophysics Data System (ADS)

Kaur, Milanpreet; Sawhney, Ravinder Singh; Engles, Derick

2017-07-01

First principle calculations based on density functional theory are realised to investigate the electron transport of the smallest fullerene-like clusters as two-probe junction devices. The junction devices are constructed by mechanically controlled break junction techniques to ensure the maximum stability of the Be20, B20 and N20 cluster molecular junctions. We investigate the density of states, transmission spectrum, molecular orbitals, current and differential conductance characteristics at discrete bias voltages to gain insight about the various transport phenomena occurring in these nano-junctions. The results show that B20 molecule when stringed to gold electrodes works as an ideal nano-device similar to the pure C20 device and is more symmetric in its characteristic nature. However, in N20 molecular device, the conduction is negligible due to the higher atomic interactions within N20 molecule, despite the fact that it is constructed with penta-valent atoms.

Stacking fault induced tunnel barrier in platelet graphite nanofiber

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lan, Yann-Wen, E-mail: chiidong@phys.sinica.edu.tw, E-mail: ywlan@phys.sinica.edu.tw; Chang, Yuan-Chih; Chang, Chia-Seng

A correlation study using image inspection and electrical characterization of platelet graphite nanofiber devices is conducted. Close transmission electron microscopy and diffraction pattern inspection reveal layers with inflection angles appearing in otherwise perfectly stacked graphene platelets, separating nanofibers into two domains. Electrical measurement gives a stability diagram consisting of alternating small-large Coulomb blockade diamonds, suggesting that there are two charging islands coupled together through a tunnel junction. Based on these two findings, we propose that a stacking fault can behave as a tunnel barrier for conducting electrons and is responsible for the observed double-island single electron transistor characteristics.

Characterization of the heat transfer properties of thermal interface materials

NASA Astrophysics Data System (ADS)

Fullem, Travis Z.

Physicists have studied the thermal conductivity of solids for decades. As a result of these efforts, thermal conduction in crystalline solids is well understood; there are detailed theories describing thermal conduction due to electrons and phonons. Phonon scattering and transmission at solid/solid interfaces, particularly above cryogenic temperatures, is not well understood and more work is needed in this area. The desire to solve engineering problems which require good thermal contact between mating surfaces has provided enhanced motivation for furthering the state of the art on this topic. Effective thermal management is an important design consideration in microelectronic systems. A common technique for removing excess heat from an electronic device is to attach a heatsink to the device; it is desirable to minimize the thermal resistance between the device and the heatsink. This can be accomplished by placing a thermal interface material (TIM) between the two surfaces. Due to the ever-increasing power densities found in electronic components, there is a desire to design better TIMs, which necessitates the ability to characterize TIM bondlines and to better understand the physics of heat conduction through TIM bondlines. A micro Fourier apparatus which employs Pt thin film thermometers of our design has been built and is capable of precisely quantifying the thermal resistance of thermal interface materials. In the present work several types of commercially available TIMs have been studied using this apparatus, including: greases, filled epoxies, and thermally conductive pads. In the case of filled epoxies, bondlines of various thicknesses, ranging from thirty microns to several hundred microns, have been measured. The microstructure of these bondlines has been investigated using optical microscopy and acoustic microscopy. Measured values of thermal conductivity are considered in terms of microstructural features such as percolation networks and filler particle depleted regions at the interface between the TIM and the substrate. The extent to which depleted regions contribute to the interfacial resistance is examined. The relationship between electrical and thermal resistance of the TIM bondline is considered in the context of comparing the relative contribution of electron and phonon heat conduction and how this correlates to microstructural features.

All-phosphorus flexible devices with non-collinear electrodes: a first principles study.

PubMed

Li, Junjun; Ruan, Lufeng; Wu, Zewen; Zhang, Guiling; Wang, Yin

2018-03-07

With the continuous expansion of the family of two-dimensional (2D) materials, flexible electronics based on 2D materials have quickly emerged. Theoretically, predicting the transport properties of the flexible devices made up of 2D materials using first principles is of great importance. Using density functional theory combined with the non-equilibrium Green's function formalism, we calculated the transport properties of all-phosphorus flexible devices with non-collinear electrodes, and the results predicted that the device with compressed metallic phosphorene electrodes sandwiching a P-type semiconducting phosphorene shows a better and robust conducting behavior against the bending of the semiconducting region when the angle between the two electrodes is less than 45°, which indicates that this system is very promising for flexible electronics. The calculation of a quantum transport system with non-collinear electrodes demonstrated in this work will provide more interesting information on mesoscopic material systems and related devices.

Inkjet-printing of non-volatile organic resistive devices and crossbar array structures

NASA Astrophysics Data System (ADS)

Sax, Stefan; Nau, Sebastian; Popovic, Karl; Bluemel, Alexander; Klug, Andreas; List-Kratochvil, Emil J. W.

2015-09-01

Due to the increasing demand for storage capacity in various electronic gadgets like mobile phones or tablets, new types of non-volatile memory devices have gained a lot of attention over the last few years. Especially multilevel conductance switching elements based on organic semiconductors are of great interest due to their relatively simple device architecture and their small feature size. Since organic semiconductors combine the electronic properties of inorganic materials with the mechanical characteristics of polymers, this class of materials is suitable for solution based large area device preparation techniques. Consequently, inkjet based deposition techniques are highly capable of facing preparation related challenges. By gradually replacing the evaporated electrodes with inkjet printed silver, the preparation related influence onto device performance parameters such as the ON/OFF ratio was investigated with IV measurements and high resolution transmission electron microscopy. Due to the electrode surface roughness the solvent load during the printing of the top electrode as well as organic layer inhomogeneity's the utilization in array applications is hampered. As a prototypical example a 1diode-1resistor element and a 2×2 subarray from 5×5 array matrix were fully characterized demonstrating the versatility of inkjet printing for device preparation.

The effect of doping Sb on the electronic structure and the device characteristics of Ovonic Threshold Switches based on Ge-Se

PubMed Central

Shin, Sang-Yeol; Choi, J. M.; Seo, Juhee; Ahn, Hyung-Woo; Choi, Yong Gyu; Cheong, Byung-ki; Lee, Suyoun

2014-01-01

The Ovonic Threshold Switch (OTS) based on an amorphous chalcogenide material has attracted much interest as a promising candidate for a high-performance thin-film switching device enabling 3D-stacking of memory devices. In this work, we studied on the electronic structure of amorphous Sb-doped Ge0.6Se0.4 (in atomic mole fraction) film and its characteristics as to OTS devices. From the optical absorption spectroscopy measurement, the band gap (Eg) was found to decrease with increasing Sb content. In addition, as Sb content increased, the activation energy (Ea) for electrical conduction was found to decrease down to about one third of Eg from a half. As to the device characteristics, we found that the threshold switching voltage (Vth) drastically decreased with the Sb content. These results, being accountable in terms of the changes in the bonding configuration of constituent atoms as well as in the electronic structure such as the energy gap and trap states, advance an effective method of compositional adjustment to modulate Vth of an OTS device for various applications. PMID:25403772

Absolute Negative Resistance Induced by Directional Electron-Electron Scattering in a Two-Dimensional Electron Gas

NASA Astrophysics Data System (ADS)

Kaya, Ismet I.

2007-03-01

A ballistic conductor is restricted to have positive three terminal resistance just as a Drude conductor. Intercarrier scattering does not influence the conductivity of the latter transport regime and does not exist in the former. However, as the electron energies increased, in the intermediate regime, single or few intercarrier scattering events starts to dominate the transport properties of a conductor with sufficiently small dimensions. A three-terminal device formed by two electrostatic barriers crossing an asymmetrically patterned two dimensional electron gas displays an unusual potential depression at the middle contact, yielding absolute negative resistance. The device displays momentum and current transfer ratios that far exceed unity. The observed reversal of the current or potential in the middle terminal is interpreted as the analog of Bernoulli's effect in a Fermi liquid. The results are explained by directional scattering of electrons in two dimensions.

Charge transport through exciton shelves in cadmium chalcogenide quantum dot-DNA nano-bioelectronic thin films

NASA Astrophysics Data System (ADS)

Goodman, Samuel M.; Noh, Hyunwoo; Singh, Vivek; Cha, Jennifer N.; Nagpal, Prashant

2015-02-01

Quantum dot (QD), or semiconductor nanocrystal, thin films are being explored for making solution-processable devices due to their size- and shape-tunable bandgap and discrete higher energy electronic states. While DNA has been extensively used for the self-assembly of nanocrystals, it has not been investigated for the simultaneous conduction of multiple energy charges or excitons via exciton shelves (ES) formed in QD-DNA nano-bioelectronic thin films. Here, we present studies on charge conduction through exciton shelves, which are formed via chemically coupled QDs and DNA, between electronic states of the QDs and the HOMO-LUMO levels in the complementary DNA nucleobases. While several challenges need to be addressed in optimizing the formation of devices using QD-DNA thin films, a higher charge collection efficiency for hot-carriers and our detailed investigations of charge transport mechanism in these thin films highlight their potential for applications in nano-bioelectronic devices and biological transducers.

Photosensitive space charge limited current in screen printed CdTe thin films

NASA Astrophysics Data System (ADS)

Vyas, C. U.; Pataniya, Pratik; Zankat, Chetan K.; Patel, Alkesh B.; Pathak, V. M.; Patel, K. D.; Solanki, G. K.

2018-05-01

Group II-VI Compounds have emerged out as most suitable in the class of photo sensitive material. They represent a strong position in terms of their applications in the field of detectors as well as photo voltaic devices. Cadmium telluride is the prime member of this Group, because of high acceptance of this material as active component in opto-electronic devices. In this paper we report preparation and characterization of CdTe thin films by using a most economical screen printing technique in association with sintering at 510°C temperature. Surface morphology and smoothness are prime parameters of any deposited to be used as an active region of devices. Thus, we studied of the screen printed thin film by means of atomic force microscopy (AFM) and scanning electron microscopy (SEM) for this purpose. However, growth processes induced intrinsic defects in fabricated films work as charge traps and affect the conduction process significantly. So the conduction mechanism of deposited CdTe thin film is studied under dark as well as illuminated conditions. It is found that the deposited films showed the space charge limited conduction (SCLC) mechanism and hence various parameters of space charge limited conduction (SCLC) of CdTe film were evaluated and discussed and the photo responsive resistance is also presented in this paper.

Device characteristics of organic light-emitting diodes based on electronic structure of the Ba-doped Alq3 layer.

PubMed

Lim, Jong Tae; Kim, Kyung Nam; Yeom, Geun Young

2009-12-01

Organic light-emitting diodes (OLEDs) with a Ba-doped tris(8-quinolinolato)aluminum(III) (Alq3) layer were fabricated to reduce the barrier height for electron injection and to improve the electron conductivity. In the OLED consisting of glass/ITO/4,4',4"-tris[2-naphthylphenyl-1-phenylamino]triphenylamine (2-TNATA, 30 nm)/4,4'-bis[N-(1-napthyl)-N-phenyl-amino]-biphenyl (NPB, 18 nm)/Alq3 (42 nm)/Ba-doped Alq3 (20 nm, x%: x = 0, 10, 25, and 50)/Al (100 nm), the device with the Alq3 layer doped with 10% Ba showed the highest light out-coupling characteristic. However, as the Ba dopant concentration was increased from 25% to 50%, this device characteristic was largely reduced. The characteristics of these devices were interpreted on the basis of the chemical reaction between Ba and Alq3 and the electron injection property by analyzing the electronic structure of the Ba-doped Alq3 layer. At a low Ba doping of 10%, mainly the Alq3 radical anion species was formed. In addition, the barrier height for electron injection in this layer was decreased to 0.6 eV, when compared to the pristine Alq3 layer. At a high Ba doping of 50%, the Alq3 molecules were severely decomposed. When the Ba dopant concentration was changed, the light-emitting characteristics of the devices were well coincided with the formation mechanism of Alq3 radical anion and Alq3 decomposition species.

MCTs and IGBTs - A comparison of performance in power electronic circuits

NASA Technical Reports Server (NTRS)

Sul, S. K.; Profumo, F.; Cho, G. H.; Lipo, T. A.

1989-01-01

There is a continuous demand for improvements in the quality of switching power devices, such as higher switching frequency, higher withstand voltage capability, larger current-handling capability, and lower conduction losses. However, for single-conduction-mechanism devices (SCRs, GTOs, BJTs, FETs), possessing all these features is probably unrealizable for physical reasons. An attractive solution appears to be double-mechanism devices, in which the features of both a minority carrier device (BJT or SCR) and a majority carrier device (MOSFET) are embedded. Both IGBTs (insulated-gate bipolar transistors) and MCTs (MOS-controlled thyristors) belong to this family of double-mechanism devices and promise to have a major impact on converter circuit signs. The authors deal with the major features of these two devices, pointing out those that are most critical to the design of converter topologies. In particular, the two devices have been tested both in a chopper and in two resonant link converter topologies, and the experimental results are reported.

Copper Nanowires as Conductive Ink for Low-Cost Draw-On Electronics.

PubMed

Jason, Naveen Noah; Shen, Wei; Cheng, Wenlong

2015-08-05

This work tackles the complicated problem of clump formation and entanglement of high aspect ratio copper nanowires, due to which a well dispersed solution for use as a true ink for drawable electronics has not been made until now. Through rheology studies even a hard to use material like copper nanowires was tailored to be made into a highly efficient conductive ink with only 2 vol % or 18.28 wt % loading which is far lower than existing nanoparticle based inks. This versatile ink can be applied onto various substrates such as paper, PET, PDMS and latex. By using the ink in a roller ball pen, a bending sensor device was simply drawn on paper, which demonstrated detection of various degrees of convex bending and was highly durable as shown in the 10,000 bending cycling test. A highly sensitive strain sensor which has a maximum gauge factor of 54.38 was also fabricated by simply painting the ink onto latex rubber strip using a paintbrush. Finally a complex conductive pattern depicting the Sydney Opera House was painted on paper to demonstrate the versatility and robustness of the ink. The use of Cu NWs is highly economical in terms of the conductive filler loading in the ink and the cost of copper itself as compared to other metal NPs, CNT, and graphene-based inks. The demonstrated e-ink, devices, and facile device fabrication methods push the field one step closer to truly creating cheap and highly reliable skin like devices "on the fly".

Graphene-on-semiconductor substrates for analog electronics

DOEpatents

Lagally, Max G.; Cavallo, Francesca; Rojas-Delgado, Richard

2016-04-26

Electrically conductive material structures, analog electronic devices incorporating the structures and methods for making the structures are provided. The structures include a layer of graphene on a semiconductor substrate. The graphene layer and the substrate are separated by an interfacial region that promotes transfer of charge carriers from the surface of the substrate to the graphene.

Simultaneously Enhancing the Cohesion and Electrical Conductivity of PEDOT:PSS Conductive Polymer Films using DMSO Additives.

PubMed

Lee, Inhwa; Kim, Gun Woo; Yang, Minyang; Kim, Taek-Soo

2016-01-13

Conductive polymer poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) ( PSS) has attracted significant attention as a hole transport and electrode layer that substitutes metal electrodes in flexible organic devices. However, its weak cohesion critically limits the reliable integration of PSS in flexible electronics, which highlights the importance of further investigation of the cohesion of PSS. Furthermore, the electrical conductivity of PSS is insufficient for high current-carrying devices such as organic photovoltaics (OPVs) and organic light emitting diodes (OLEDs). In this study, we improve the cohesion and electrical conductivity through adding dimethyl sulfoxide (DMSO), and we demonstrate the significant changes in the properties that are dependent on the wt % of DMSO. In particular, with the addition of 3 wt % DMSO, the maximum enhancements for cohesion and electrical conductivity are observed where the values increase by 470% and 6050%, respectively, due to the inter-PEDOT bridging mechanism. Furthermore, when OLED devices using the PSS films are fabricated using the 3 wt % DMSO, the display exhibits 18% increased current efficiency.

Operando x-ray photoelectron emission microscopy for studying forward and reverse biased silicon p-n junctions.

PubMed

Barrett, N; Gottlob, D M; Mathieu, C; Lubin, C; Passicousset, J; Renault, O; Martinez, E

2016-05-01

Significant progress in the understanding of surfaces and interfaces of materials for new technologies requires operando studies, i.e., measurement of chemical, electronic, and magnetic properties under external stimulus (such as mechanical strain, optical illumination, or electric fields) applied in situ in order to approach real operating conditions. Electron microscopy attracts much interest, thanks to its ability to determine semiconductor doping at various scales in devices. Spectroscopic photoelectron emission microscopy (PEEM) is particularly powerful since it combines high spatial and energy resolution, allowing a comprehensive analysis of local work function, chemistry, and electronic structure using secondary, core level, and valence band electrons, respectively. Here we present the first operando spectroscopic PEEM study of a planar Si p-n junction under forward and reverse bias. The method can be used to characterize a vast range of materials at near device scales such as resistive oxides, conducting bridge memories and domain wall arrays in ferroelectrics photovoltaic devices.

Silicon and germanium nanowire electronics: physics of conventional and unconventional transistors

NASA Astrophysics Data System (ADS)

Weber, Walter M.; Mikolajick, Thomas

2017-06-01

Research in the field of electronics of 1D group-IV semiconductor structures has attracted increasing attention over the past 15 years. The exceptional combination of the unique 1D electronic transport properties with the mature material know-how of highly integrated silicon and germanium technology holds the promise of enhancing state-of-the-art electronics. In addition of providing conduction channels that can bring conventional field effect transistors to the uttermost scaling limits, the physics of 1D group IV nanowires endows new device principles. Such unconventional silicon and germanium nanowire devices are contenders for beyond complementary metal oxide semiconductor (CMOS) computing by virtue of their distinct switching behavior and higher expressive value. This review conveys to the reader a systematic recapitulation and analysis of the physics of silicon and germanium nanowires and the most relevant CMOS and CMOS-like devices built from silicon and germanium nanowires, including inversion mode, junctionless, steep-slope, quantum well and reconfigurable transistors.

Towards nanometer-spaced silicon contacts to proteins.

PubMed

Schukfeh, Muhammed I; Sepunaru, Lior; Behr, Pascal; Li, Wenjie; Pecht, Israel; Sheves, Mordechai; Cahen, David; Tornow, Marc

2016-03-18

A vertical nanogap device (VND) structure comprising all-silicon contacts as electrodes for the investigation of electronic transport processes in bioelectronic systems is reported. Devices were fabricated from silicon-on-insulator substrates whose buried oxide (SiO2) layer of a few nanometers in thickness is embedded within two highly doped single crystalline silicon layers. Individual VNDs were fabricated by standard photolithography and a combination of anisotropic and selective wet etching techniques, resulting in p(+) silicon contacts, vertically separated by 4 or 8 nm, depending on the chosen buried oxide thickness. The buried oxide was selectively recess-etched with buffered hydrofluoric acid, exposing a nanogap. For verification of the devices' electrical functionality, gold nanoparticles were successfully trapped onto the nanogap electrodes' edges using AC dielectrophoresis. Subsequently, the suitability of the VND structures for transport measurements on proteins was investigated by functionalizing the devices with cytochrome c protein from solution, thereby providing non-destructive, permanent semiconducting contacts to the proteins. Current-voltage measurements performed after protein deposition exhibited an increase in the junctions' conductance of up to several orders of magnitude relative to that measured prior to cytochrome c immobilization. This increase in conductance was lost upon heating the functionalized device to above the protein's denaturation temperature (80 °C). Thus, the VND junctions allow conductance measurements which reflect the averaged electronic transport through a large number of protein molecules, contacted in parallel with permanent contacts and, for the first time, in a symmetrical Si-protein-Si configuration.

Modeling and Optimization of a High-Tc Hot-Electron Superconducting Mixer for Terahertz Applicaitons

NASA Technical Reports Server (NTRS)

Karasik, B. S.; McGrath, W. R.; Gaidis, M. C.; Burns, M. J.; Kleinsasser, A. W.; Delin, K. A.; Vasquez, R. P.

1996-01-01

The development of a YBa(sub 2)Cu(sub 3)O(sub 7-(kronecker delta))(YBCO) hot-electron bolometer (HEB) quasioptical mixer for a 2.5 heterodyne receiver is discussed. The modeled device is a submicron bridge made from a 10 nm thick film on a high thermal conductance substrate. The mixer performance expected for this device is analyzed in the framework of a two-temperature model which includes heating both of the electrons and the lattice. Also, the contribution of heat diffusion from the film through the substrate and from the film to the normal metal contacts is evaluated....a single sideband temperature of less than 2000k is predicted.

Adherence to hydroxyurea medication by children with sickle cell disease (SCD) using an electronic device: a feasibility study.

PubMed

Inoue, Susumu; Kodjebacheva, Gergana; Scherrer, Tammy; Rice, Gary; Grigorian, Matthew; Blankenship, Jeremy; Onwuzurike, Nkechi

2016-08-01

Adherence to hydroxyurea (HU) is a significant modifying factor in sickle cell vaso-occlusive pain. We conducted a study using an electronic medication container-monitor-reminder device (GlowCap™) to track adherence and determine whether use of this device affected rates of HU adherence. Subjects were regular attendees to our clinic. They were given a 37-item questionnaire and were asked to use a GlowCap containing HU. When the device cap is opened, it makes a remote "medication taken" record. The device also provides usage reminder in the form of lights and alarm sounds if the cap opening is delayed. Nineteen subjects participated in the survey, and 17 in the intervention phase. Of the 17, 12 had reliable adherence data. Seventeen caregivers of patients and two patients completed the survey. Two most common barriers to adherence identified were lack of reminders and absence of medicine home delivery. The intervention component of this study, which used both the electronic (GlowCap) method and medication possession ratio showed that the median adherence rate for the 12 patients evaluated was 85 %. The GlowCap device accurately kept a record of adherence rates. This device may be an effective tool for increasing HU medication adherence.

High Electron Mobility and Insights into Temperature-Dependent Scattering Mechanisms in InAsSb Nanowires.

PubMed

Boland, Jessica L; Amaduzzi, Francesca; Sterzl, Sabrina; Potts, Heidi; Herz, Laura M; Fontcuberta I Morral, Anna; Johnston, Michael B

2018-06-13

InAsSb nanowires are promising elements for thermoelectric devices, infrared photodetectors, high-speed transistors, as well as thermophotovoltaic cells. By changing the Sb alloy fraction the mid-infrared bandgap energy and thermal conductivity may be tuned for specific device applications. Using both terahertz and Raman noncontact probes, we show that Sb alloying increases the electron mobility in the nanowires by over a factor of 3 from InAs to InAs 0.65 Sb 0.35 . We also extract the temperature-dependent electron mobility via both terahertz and Raman spectroscopy, and we report the highest electron mobilities for InAs 0.65 Sb 0.35 nanowires to date, exceeding 16,000 cm 2 V -1 s -1 at 10 K.

Bipolar resistive switching in graphene oxide based metal insulator metal structure for non-volatile memory applications

NASA Astrophysics Data System (ADS)

Singh, Rakesh; Kumar, Ravi; Kumar, Anil; Kashyap, Rajesh; Kumar, Mukesh; Kumar, Dinesh

2018-05-01

Graphene oxide based devices have attracted much attention recently because of their possible application in next generation electronic devices. In this study, bipolar resistive switching characteristics of graphene oxide based metal insulator metal structure were investigated for nonvolatile memories. The graphene oxide was prepared by the conventional Hummer's method and deposited on ITO coated glass by spin-coating technique. The dominant mechanism of resistive switching is the formation and rupture of the conductive filament inside the graphene oxide. The conduction mechanism for low and high resistance states are dominated by two mechanism the ohmic conduction and space charge limited current (SCLC) mechanism, respectively. Atomic Force Microscopy, X-ray diffraction, Cyclic-Voltammetry were conducted to observe the morphology, structure and behavior of the material. The fabricated device with Al/GO/ITO structure exhibited reliable bipolar resistive switching with set & reset voltage of -2.3 V and 3V respectively.

Enhancing Modulation of Thermal Conduction in Vanadium Dioxide Thin Film by Nanostructured Nanogaps

DOE PAGES

Choe, Hwan Sung; Suh, Joonki; Ko, Changhyun; ...

2017-08-02

Efficient thermal management at the nanoscale is important for reducing energy consumption and dissipation in electronic devices, lab-on-a-chip platforms and energy harvest/conversion systems. For many of these applications, it is much desired to have a solid-state structure that reversibly switches thermal conduction with high ON/OFF ratios and at high speed. We describe design and implementation of a novel, all-solid-state thermal switching device by nanostructured phase transformation, i.e., modulation of contact pressure an d area between two poly-silicon surfaces activated by microstructural change of a vanadium dioxide (VO 2 ) thin film. Our solid-state devices demonstrate large and reversible alteration ofmore » cross-plane thermal conductance as a function of temperature, achieving a conductance ratio of at least 2.5. This new approach using nanostructured phase transformation provides new opportunities for applications that require advanced temperature and heat regulations.« less

Enhancing Modulation of Thermal Conduction in Vanadium Dioxide Thin Film by Nanostructured Nanogaps

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choe, Hwan Sung; Suh, Joonki; Ko, Changhyun

Efficient thermal management at the nanoscale is important for reducing energy consumption and dissipation in electronic devices, lab-on-a-chip platforms and energy harvest/conversion systems. For many of these applications, it is much desired to have a solid-state structure that reversibly switches thermal conduction with high ON/OFF ratios and at high speed. We describe design and implementation of a novel, all-solid-state thermal switching device by nanostructured phase transformation, i.e., modulation of contact pressure an d area between two poly-silicon surfaces activated by microstructural change of a vanadium dioxide (VO 2 ) thin film. Our solid-state devices demonstrate large and reversible alteration ofmore » cross-plane thermal conductance as a function of temperature, achieving a conductance ratio of at least 2.5. This new approach using nanostructured phase transformation provides new opportunities for applications that require advanced temperature and heat regulations.« less

Electrical NEP in hot-electron titanium superconducting bolometers

NASA Astrophysics Data System (ADS)

Karasik, Boris S.; Pereverzev, Sergey V.; Olaya, David; Wei, Jian; Gershenson, Michael E.; Sergeev, Andrei V.

2008-07-01

We are presenting the current progress on the titanium (Ti) hot-electron transition-edge devices. The ultimate goal of this work is to develop a submillimeter Hot-Electron Direct Detector (HEDD) with the noise equivalent power NEP = 10-18-10-20 W/Hz1/2 for the moderate resolution spectroscopy and Cosmic Microwave Background (CMB) studies on future space telescope (e.g., SPICA, SAFIR, SPECS, CMBPol) with cryogenically cooled (~ 4-5 K) mirrors. Recentlyi, we have achieved the extremely low thermal conductance (~ 20 fW/K at 300 mK and ~ 0.1 fW/K at 40 mK) due to the electron-phonon decoupling in Ti nanodevices with niobium (Nb) Andreev contacts. This thermal conductance translates into the "phonon-noise" NEP ~ 3×10-21 W/Hz1/2 at 40 mK and NEP ~ 3×10-19 W/Hz1/2 at 300 mK. These record data indicate the great potential of the hot-electron detector for meeting many application needs. Beside the extremely low phonon-noise NEP, the nanobolometers have a very low electron heat capacitance that makes them promising as detectors of single THz photonsii. As the next step towards the practical demonstration of the HEDD, we fabricated and tested somewhat larger than in Ref.1 devices (~ 6 μm × 0.35 μm × 40 nm) whose critical temperature is well reproduced in the range 300-350 mK. The output electrical noise measured in these devices with a low-noise dc SQUID is dominated by the thermal energy fluctuations (ETF) aka "phonon noise". This indicates the high electrothermal loop gain that effectively suppresses the contributions of the Johnson noise and the amplifier (SQUID) noise. The electrical NEP = 6.7×10-18 W/Hz1/2 derived from these measurements is in good agreement with the predictions based on the thermal conductance data. The very low NEP and the high speed (~ μs) are a unique combination not found in other detectors.

Controllable spin-charge transport in strained graphene nanoribbon devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Diniz, Ginetom S., E-mail: ginetom@gmail.com; Guassi, Marcos R.; Qu, Fanyao

2014-09-21

We theoretically investigate the spin-charge transport in two-terminal device of graphene nanoribbons in the presence of a uniform uniaxial strain, spin-orbit coupling, exchange field, and smooth staggered potential. We show that the direction of applied strain can efficiently tune strain-strength induced oscillation of band-gap of armchair graphene nanoribbon (AGNR). It is also found that electronic conductance in both AGNR and zigzag graphene nanoribbon (ZGNR) oscillates with Rashba spin-orbit coupling akin to the Datta-Das field effect transistor. Two distinct strain response regimes of electronic conductance as function of spin-orbit couplings magnitude are found. In the regime of small strain, conductance ofmore » ZGNR presents stronger strain dependence along the longitudinal direction of strain. Whereas for high values of strain shows larger effect for the transversal direction. Furthermore, the local density of states shows that depending on the smoothness of the staggered potential, the edge states of AGNR can either emerge or be suppressed. These emerging states can be determined experimentally by either spatially scanning tunneling microscope or by scanning tunneling spectroscopy. Our findings open up new paradigms of manipulation and control of strained graphene based nanostructure for application on novel topological quantum devices.« less

Method of forming a dense, high temperature electronically conductive composite layer on a porous ceramic substrate

DOEpatents

Isenberg, A.O.

1992-04-21

An electrochemical device, containing a solid oxide electrolyte material and an electrically conductive composite layer, has the composite layer attached by: (A) applying a layer of LaCrO[sub 3], YCrO[sub 3] or LaMnO[sub 3] particles, on a portion of a porous ceramic substrate, (B) heating to sinter bond the particles to the substrate, (C) depositing a dense filler structure between the doped particles, (D) shaving off the top of the particles, and (E) applying an electronically conductive layer over the particles as a contact. 7 figs.

Conductive polymer-based material

DOEpatents

McDonald, William F [Utica, OH; Koren, Amy B [Lansing, MI; Dourado, Sunil K [Ann Arbor, MI; Dulebohn, Joel I [Lansing, MI; Hanchar, Robert J [Charlotte, MI

2007-04-17

Disclosed are polymer-based coatings and materials comprising (i) a polymeric composition including a polymer having side chains along a backbone forming the polymer, at least two of the side chains being substituted with a heteroatom selected from oxygen, nitrogen, sulfur, and phosphorus and combinations thereof; and (ii) a plurality of metal species distributed within the polymer. At least a portion of the heteroatoms may form part of a chelation complex with some or all of the metal species. In many embodiments, the metal species are present in a sufficient concentration to provide a conductive material, e.g., as a conductive coating on a substrate. The conductive materials may be useful as the thin film conducting or semi-conducting layers in organic electronic devices such as organic electroluminescent devices and organic thin film transistors.

Basic materials physics of transparent conducting oxides.

PubMed

Edwards, P P; Porch, A; Jones, M O; Morgan, D V; Perks, R M

2004-10-07

Materials displaying the remarkable combination of high electrical conductivity and optical transparency already from the basis of many important technological applications, including flat panel displays, solar energy capture and other opto-electronic devices. Here we present the basic materials physics of these important materials centred on the nature of the doping process to generate n-type conductivity in transparent conducting oxides, the associated transition to the metallic (conducting) state and the detailed properties of the degenerate itinerant electron gas. The aim is to fully understand the origins of the basic performance limits of known materials and to set the scene for new or improved materials which will breach those limits for new-generation transparent conducting materials, either oxides, or beyond oxides.

NASA SBIR product catalog, 1991

NASA Technical Reports Server (NTRS)

1991-01-01

This catalog is a partial list of products of NASA SBIR (Small Business Innovation Research) projects that have advanced to some degree into Phase 3. While most of the products evolved from work conducted during SBIR Phase 1 and 2, a few advanced to commercial status solely from Phase 1 activities. The catalog presents information provided to NASA by SBIR contractors who wished to have their products exhibited at Technology 2001, a NASA-sponsored technology transfer conference held in San Jose, California, on December 4, 5, and 6, 1991. The catalog presents the product information in the following technology areas: computer and communication systems; information processing and AI; robotics and automation; signal and image processing; microelectronics; electronic devices and equipment; microwave electronic devices; optical devices and lasers; advanced materials; materials processing; materials testing and NDE; materials instrumentation; aerodynamics and aircraft; fluid mechanics and measurement; heat transfer devices; refrigeration and cryogenics; energy conversion devices; oceanographic instruments; atmosphere monitoring devices; water management; life science instruments; and spacecraft electromechanical systems.

Extremely Elastic Wearable Carbon Nanotube Fiber Strain Sensor for Monitoring of Human Motion.

PubMed

Ryu, Seongwoo; Lee, Phillip; Chou, Jeffrey B; Xu, Ruize; Zhao, Rong; Hart, Anastasios John; Kim, Sang-Gook

2015-06-23

The increasing demand for wearable electronic devices has made the development of highly elastic strain sensors that can monitor various physical parameters an essential factor for realizing next generation electronics. Here, we report an ultrahigh stretchable and wearable device fabricated from dry-spun carbon nanotube (CNT) fibers. Stretching the highly oriented CNT fibers grown on a flexible substrate (Ecoflex) induces a constant decrease in the conductive pathways and contact areas between nanotubes depending on the stretching distance; this enables CNT fibers to behave as highly sensitive strain sensors. Owing to its unique structure and mechanism, this device can be stretched by over 900% while retaining high sensitivity, responsiveness, and durability. Furthermore, the device with biaxially oriented CNT fiber arrays shows independent cross-sensitivity, which facilitates simultaneous measurement of strains along multiple axes. We demonstrated potential applications of the proposed device, such as strain gauge, single and multiaxial detecting motion sensors. These devices can be incorporated into various motion detecting systems where their applications are limited to their strain.

Artificial Synaptic Devices Based on Natural Chicken Albumen Coupled Electric-Double-Layer Transistors

NASA Astrophysics Data System (ADS)

Wu, Guodong; Feng, Ping; Wan, Xiang; Zhu, Liqiang; Shi, Yi; Wan, Qing

2016-03-01

Recent progress in using biomaterials to fabricate functional electronics has got growing attention for the new generation of environmentally friendly and biocompatible electronic devices. As a kind of biological material with rich source, proteins are essential natural component of all organisms. At the same time, artificial synaptic devices are of great significance for neuromorphic systems because they can emulate the signal process and memory behaviors of biological synapses. In this report, natural chicken albumen with high proton conductivity was used as the coupling electrolyte film for organic/inorganic hybrid synaptic devices fabrication. Some important synaptic functions including paired-pulse facilitation, dynamic filtering, short-term to long-term memory transition and spatial summation and shunting inhibition were successfully mimicked. Our results are very interesting for biological friendly artificial neuron networks and neuromorphic systems.

The merger of electrochemistry and molecular electronics.

PubMed

McCreery, Richard L

2012-02-01

Molecular Electronics has the potential to greatly enhance existing silicon-based microelectronics to realize new functions, higher device density, lower power consumption, and lower cost. Although the investigation of electron transport through single molecules and molecular monolayers in "molecular junctions" is a recent development, many of the relevant concepts and phenomena are derived from electrochemistry, as practiced for the past several decades. The past 10+ years have seen an explosion of research activity directed toward how the structure of molecules affects electron transport in molecular junctions, with the ultimate objective of "rational design" of molecular components with new electronic functions, such as chemical sensing, interactions with light, and low-cost, low-power consumer electronics. In order to achieve these scientifically and commercially important objectives, the factors controlling charge transport in molecules "connected" to conducting contacts must be understood, and methods for massively parallel manufacturing of molecular circuits must be developed. This Personal Account describes the development of reproducible and robust molecular electronic devices, starting with modified electrodes used in electrochemistry and progressing to manufacturable molecular junctions. Although the field faced some early difficulties in reliability and characterization, the pieces are now in place for rapid advances in understanding charge transport at the molecular level. Inherent in the field of Molecular Electronics are many electrochemical concepts, including tunneling, redox exchange, activated electron transfer, and electron coupling between molecules and conducting contacts. Copyright © 2012 The Japan Chemical Journal Forum and Wiley Periodicals, Inc.

Modeling the Charge Transport in Graphene Nano Ribbon Interfaces for Nano Scale Electronic Devices

NASA Astrophysics Data System (ADS)

Kumar, Ravinder; Engles, Derick

2015-05-01

In this research work we have modeled, simulated and compared the electronic charge transport for Metal-Semiconductor-Metal interfaces of Graphene Nano Ribbons (GNR) with different geometries using First-Principle calculations and Non-Equilibrium Green's Function (NEGF) method. We modeled junctions of Armchair GNR strip sandwiched between two Zigzag strips with (Z-A-Z) and Zigzag GNR strip sandwiched between two Armchair strips with (A-Z-A) using semi-empirical Extended Huckle Theory (EHT) within the framework of Non-Equilibrium Green Function (NEGF). I-V characteristics of the interfaces were visualized for various transport parameters. The distinct changes in conductance and I-V curves reported as the Width across layers, Channel length (Central part) was varied at different bias voltages from -1V to 1 V with steps of 0.25 V. From the simulated results we observed that the conductance through A-Z-A graphene junction is in the range of 10-13 Siemens whereas the conductance through Z-A-Z graphene junction is in the range of 10-5 Siemens. These suggested conductance controlled mechanisms for the charge transport in the graphene interfaces with different geometries is important for the design of graphene based nano scale electronic devices like Graphene FETs, Sensors.

Generating free charges by carrier multiplication in quantum dots for highly efficient photovoltaics.

PubMed

Ten Cate, Sybren; Sandeep, C S Suchand; Liu, Yao; Law, Matt; Kinge, Sachin; Houtepen, Arjan J; Schins, Juleon M; Siebbeles, Laurens D A

2015-02-17

CONSPECTUS: In a conventional photovoltaic device (solar cell or photodiode) photons are absorbed in a bulk semiconductor layer, leading to excitation of an electron from a valence band to a conduction band. Directly after photoexcitation, the hole in the valence band and the electron in the conduction band have excess energy given by the difference between the photon energy and the semiconductor band gap. In a bulk semiconductor, the initially hot charges rapidly lose their excess energy as heat. This heat loss is the main reason that the theoretical efficiency of a conventional solar cell is limited to the Shockley-Queisser limit of ∼33%. The efficiency of a photovoltaic device can be increased if the excess energy is utilized to excite additional electrons across the band gap. A sufficiently hot charge can produce an electron-hole pair by Coulomb scattering on a valence electron. This process of carrier multiplication (CM) leads to formation of two or more electron-hole pairs for the absorption of one photon. In bulk semiconductors such as silicon, the energetic threshold for CM is too high to be of practical use. However, CM in nanometer sized semiconductor quantum dots (QDs) offers prospects for exploitation in photovoltaics. CM leads to formation of two or more electron-hole pairs that are initially in close proximity. For photovoltaic applications, these charges must escape from recombination. This Account outlines our recent progress in the generation of free mobile charges that result from CM in QDs. Studies of charge carrier photogeneration and mobility were carried out using (ultrafast) time-resolved laser techniques with optical or ac conductivity detection. We found that charges can be extracted from photoexcited PbS QDs by bringing them into contact with organic electron and hole accepting materials. However, charge localization on the QD produces a strong Coulomb attraction to its counter charge in the organic material. This limits the production of free charges that can contribute to the photocurrent in a device. We show that free mobile charges can be efficiently produced via CM in solids of strongly coupled PbSe QDs. Strong electronic coupling between the QDs resulted in a charge carrier mobility of the order of 1 cm(2) V(-1) s(-1). This mobility is sufficiently high so that virtually all electron-hole pairs escape from recombination. The impact of temperature on the CM efficiency in PbSe QD solids was also studied. We inferred that temperature has no observable effect on the rate of cooling of hot charges nor on the CM rate. We conclude that exploitation of CM requires that charges have sufficiently high mobility to escape from recombination. The contribution of CM to the efficiency of photovoltaic devices can be further enhanced by an increase of the CM efficiency above the energetic threshold of twice the band gap. For large-scale applications in photovoltaic devices, it is important to develop abundant and nontoxic materials that exhibit efficient CM.

Resistive switching mechanisms in random access memory devices incorporating transition metal oxides: TiO2, NiO and Pr0.7Ca0.3MnO3.

PubMed

Magyari-Köpe, Blanka; Tendulkar, Mihir; Park, Seong-Geon; Lee, Hyung Dong; Nishi, Yoshio

2011-06-24

Resistance change random access memory (RRAM) cells, typically built as MIM capacitor structures, consist of insulating layers I sandwiched between metal layers M, where the insulator performs the resistance switching operation. These devices can be electrically switched between two or more stable resistance states at a speed of nanoseconds, with long retention times, high switching endurance, low read voltage, and large switching windows. They are attractive candidates for next-generation non-volatile memory, particularly as a flash successor, as the material properties can be scaled to the nanometer regime. Several resistance switching models have been suggested so far for transition metal oxide based devices, such as charge trapping, conductive filament formation, Schottky barrier modulation, and electrochemical migration of point defects. The underlying fundamental principles of the switching mechanism still lack a detailed understanding, i.e. how to control and modulate the electrical characteristics of devices incorporating defects and impurities, such as oxygen vacancies, metal interstitials, hydrogen, and other metallic atoms acting as dopants. In this paper, state of the art ab initio theoretical methods are employed to understand the effects that filamentary types of stable oxygen vacancy configurations in TiO(2) and NiO have on the electronic conduction. It is shown that strong electronic interactions between metal ions adjacent to oxygen vacancy sites results in the formation of a conductive path and thus can explain the 'ON' site conduction in these materials. Implication of hydrogen doping on electroforming is discussed for Pr(0.7)Ca(0.3)MnO(3) devices based on electrical characterization and FTIR measurements.

XPS/NEXAFS spectroscopic and conductance studies of glycine on AlGaN/GaN transistor devices

NASA Astrophysics Data System (ADS)

Myers, Matthew; Khir, Farah Liyana Muhammad; Home, Michael A.; Mennell, Christopher; Gillbanks, Jeremy; Tadich, Anton; Baker, Murray V.; Nener, Brett D.; Parish, Giacinta

2018-03-01

We report on a study using a combination of XPS/NEXAFS and conductivity measurements to develop a fundamental understanding of how dipolar molecules interact with the heterostructure device surface and affect the device conductivity of AlGaN/GaN heterostructure-based transistors. In such structures, which are increasingly being investigated for chemical and biological sensing, a 2-dimensional electron gas spontaneously forms at the layer interface that is sensitive to the charge characteristics of the exposed surface. Glycine, chosen for this study because it is the simplest of the amino acids and is known to form a zwitterionic configuration when stabilized through intermolecular interactions, was evaporated under ultra-high vacuum conditions onto the device surface and subsequently both XPS/NEXAFS and conductivity measurements were conducted. NEXAFS spectra show a preferential orientation for the Glycine molecules on the surface and evidence for both neutral and zwitterionic species on the surface. In situ conductivity measurements suggest that the negatively charged carboxylate group is closest to the surface. These results are a unique and pivotal contribution to the previous and at times conflicting literature on the zwitterionic nature of Glycine.

Interplay Between Electron-Electron, Electron-Impurity and Electron-Boundary Scattering in a Two Dimensional Electron Gas (2DEG)

NASA Astrophysics Data System (ADS)

Abraham, Mathew C.; Ram, Rajeev J.; Gossard, A. C.

2003-03-01

A small group of experiments have been conducted over the past decade that explore the fact that even though electron-electron (e-e) scattering in a 2DEG is momentum conserving, its interplay with electron-impurity (e-i)and electron-boundary (e-b) scattering can change the resistance of bulk and mesoscopic devices respectively. The interplay between e-e and e-i scattering in a bulk sample has been shown to cause a fall in the resistivity as a function of electron temperature in the regime where the scattering length l_ee > l_ei and a rise when l_ee < l_ei. In contrast, the interplay between e-e and e-b scattering has been demonstrated to raise the resistivity of a mesoscopic sized wire as a function of electron temperature in the regime l_ee > lb and a fall when l_ee < l_b. We attempt to present a comprehensive picture of these two apparently competing effects by studying devices that are affected by both phenomena simultaneously.

MEASUREMENT OF PHONON TRANSPORT IN GaN-ON-SiC AND GaN-ON-DIAMOND HIGH ELECTRON MOBILITY TRANSISTOR (HEMT) DEVICES

DTIC Science & Technology

2017-10-16

DARPA) or the U.S. Government. Report contains color. 14. ABSTRACT The objective of this project is to experimentally study the transient non ...the Metal Thin Film in TDTR ........................................ 14 4.3 Experimental Observation of the Frequency Filtering Effect...scale of the device layers and the high density of interfaces, non -diffusive heat conduction plays a critical role in thermal transport of GaN devices

Organic mixed conductors for bioelectronic applications (Conference Presentation)

NASA Astrophysics Data System (ADS)

Rivnay, Jonathan

2016-09-01

Direct measurement and stimulation of electrophysiological activity is a staple of neural and cardiac health monitoring, diagnosis and/or therapy. The ability to sensitively detect these signals can be enhanced by organic electronic materials that show mixed conduction properties (both electronic and ionic transport) in order to bridge the inherent mismatch that is prevalent between biological systems and traditional microelectronic materials/devices. Organic electrochemical transistors (OECTs) are one class of devices that utilize organic mixed conductors as the transistor channel, and have shown considerable promise as amplifying transducers due to their stability in aqueous conditions and high transconductance. These devices are fabricated in flexible, conformable form factors for in vivo recordings of epileptic activity, and for cutaneous EEG and ECG recordings in human subjects. The majority of high performance devices are based on conducting polymers such as poly(3,4-ethylenedioxythiophene) :poly(styrenesulfonate), PEDOT:PSS. By investigating PEDOT-based materials and devices, we are able to construct design rules for new formulations/materials. Introducing glycolated side chains to carefully selected semiconducting polymer backbones has enabled a new class high performance bioelectronic materials that feature high volumetric capacitance, transconductance >10mS (device dimensions ca. 10um), and steep subthreshold switching characteristics. A sub-set of these materials outperform PEDOT:PSS and shows significant promise for low power in vitro and in vivo biosensing applications.

Paper-Based Inkjet-Printed Flexible Electronic Circuits.

PubMed

Wang, Yan; Guo, Hong; Chen, Jin-Ju; Sowade, Enrico; Wang, Yu; Liang, Kun; Marcus, Kyle; Baumann, Reinhard R; Feng, Zhe-Sheng

2016-10-05

Printed flexible electronics have been widely studied for their potential use in various applications. In this paper, a simple, low-cost method of fabricating flexible electronic circuits with high conductivity of 4.0 × 10 7 S·m -1 (about 70% of the conductivity of bulk copper) is demonstrated. Teslin paper substrate is treated with stannous chloride (SnCl 2 ) colloidal solution to reduce the high ink absorption rate, and then the catalyst ink is inkjet-printed on its surface, followed by electroless deposition of copper at low temperature. In spite of the decrease in conductance to some extent, electronic circuits fabricated by this method can maintain function even under various folding angles or after repeated folding. This developed technology has great potential in a variety of applications, such as three-dimensional devices and disposable RFID tags.

Electrochromic optical switching device

DOEpatents

Lampert, C.M.; Visco, S.J.

1992-08-25

An electrochromic cell is disclosed which comprises an electrochromic layer, a polymerizable organo-sulfur layer which comprises the counter electrode of the structure, and an ionically conductive electronically insulating material which comprises the separator between the electrodes. In a preferred embodiment, both the separator and the organo-sulfur electrode (in both its charged and uncharged states) are transparent either to visible light or to the entire solar spectrum. An electrochromic device is disclosed which comprises such electrodes and separator encased in glass plates on the inner surface of each of which is formed a transparent electrically conductive film in respective electrical contact with the electrodes which facilitates formation of an external electrical connection or contact to the electrodes of the device to permit electrical connection of the device to an external potential source. 3 figs.

Electrochromic optical switching device

DOEpatents

Lampert, Carl M.; Visco, Steven J.

1992-01-01

An electrochromic cell is disclosed which comprises an electrochromic layer, a polymerizable organo-sulfur layer which comprises the counter electrode of the structure, and an ionically conductive electronically insulating material which comprises the separator between the electrodes. In a preferred embodiment, both the separator and the organo-sulfur electrode (in both its charged and uncharged states) are transparent either to visible light or to the entire solar spectrum. An electrochromic device is disclosed which comprises such electrodes and separator encased in glass plates on the inner surface of each of which is formed a transparent electrically conductive film in respective electrical contact with the electrodes which facilitates formation of an external electrical connection or contact to the electrodes of the device to permit electrical connection of the device to an external potential source.

Carbon Nanotube Devices Engineered by Atomic Force Microscopy

NASA Astrophysics Data System (ADS)

Prisbrey, Landon

This dissertation explores the engineering of carbon nanotube electronic devices using atomic force microscopy (AFM) based techniques. A possible application for such devices is an electronic interface with individual biological molecules. This single molecule biosensing application is explored both experimentally and with computational modeling. Scanning probe microscopy techniques, such as AFM, are ideal to study nanoscale electronics. These techniques employ a probe which is raster scanned above a sample while measuring probe-surface interactions as a function of position. In addition to topographical and electrostatic/magnetic surface characterization, the probe may also be used as a tool to manipulate and engineer at the nanoscale. Nanoelectronic devices built from carbon nanotubes exhibit many exciting properties including one-dimensional electron transport. A natural consequence of onedimensional transport is that a single perturbation along the conduction channel can have extremely large effects on the device's transport characteristics. This property may be exploited to produce electronic sensors with single-molecule resolution. Here we use AFM-based engineering to fabricate atomic-sized transistors from carbon nanotube network devices. This is done through the incorporation of point defects into the carbon nanotube sidewall using voltage pulses from an AFM probe. We find that the incorporation of an oxidative defect leads to a variety of possible electrical signatures including sudden switching events, resonant scattering, and breaking of the symmetry between electron and hole transport. We discuss the relationship between these different electronic signatures and the chemical structure/charge state of the defect. Tunneling through a defect-induced Coulomb barrier is modeled with numerical Verlet integration of Schrodinger's equation and compared with experimental results. Atomic-sized transistors are ideal for single-molecule applications due to their sensitivity to electric fields with very small detection volumes. In this work we demonstrate these devices as single-molecule sensors to detect individual N-(3-Dimethylaminopropyl)- N'-ethylcarbodiimide (EDC) molecules in an aqueous environment. An exciting application of these sensors is to study individual macromolecules participating in biological reactions, or undergoing conformational change. However, it is unknown whether the associated electrostatic signals exceed detection limits. We report calculations which reveal that enzymatic processes, such as substrate binding and internal protein dynamics, are detectable at the single-molecule level using existing atomic-sized transistors. Finally, we demonstrate the use of AFM-based engineering to control the function of nanoelectronic devices without creating a point defect in the sidewall of the nanotube. With a biased AFM probe we write charge patterns on a silicon dioxide surface in close proximity to a carbon nanotube device. The written charge induces image charges in the nearby electronics, and can modulate the Fermi level in a nanotube by +/-1 eV. We use this technique to induce a spatially controlled doping charge pattern in the conduction channel, and thereby reconfigure a field-effect transistor into a pn junction. Other simple charge patterns could be used to create other devices. The doping charge persists for days and can be erased and rewritten, offering a new tool for prototyping nanodevices and optimizing electrostatic doping profiles.

Rapid thermal responsive conductive hybrid cryogels with shape memory properties, photothermal properties and pressure dependent conductivity.

PubMed

Deng, Zexing; Guo, Yi; Ma, Peter X; Guo, Baolin

2018-09-15

Stimuli responsive cryogels with multi-functionality have potential application for electrical devices, actuators, sensors and biomedical devices. However, conventional thermal sensitive poly(N-isopropylacrylamide) cryogels show slow temperature response speed and lack of multi-functionality, which greatly limit their practical application. Herein we present conductive fast (2 min for both deswelling and reswelling behavior) thermally responsive poly(N-isopropylacrylamide) cryogels with rapid shape memory properties (3 s for shape recovery), near-infrared (NIR) light sensitivity and pressure dependent conductivity, and further demonstrated their applications as temperature sensitive on-off switch, NIR light sensitive on-off switch, water triggered shape memory on-off switch and pressure dependent device. These cryogels were first prepared in dimethyl sulfoxide below its melting temperature in ice bath and subsequently put into aniline or pyrrole solution to in situ deposition of conducting polyaniline or polypyrrole nanoparticles. The continuous macroporous sponge-like structure provides cryogels with rapid responsivity both in deswelling, reswelling kinetics and good elasticity. After incorporating electrically conductive polyaniline or polypyrrole nanoaggregates, the hybrid cryogels exhibit desirable conductivity, photothermal property, pressure dependent conductivity and good cytocompatibility. These multifunctional hybrid cryogels make them great potential as stimuli responsive electrical device, tissue engineering scaffolds, drug delivery vehicle and electronic skin. Copyright © 2018 Elsevier Inc. All rights reserved.

Tunable electrical conductivity of individual graphene oxide sheets reduced at "low" temperatures.

PubMed

Jung, Inhwa; Dikin, Dmitriy A; Piner, Richard D; Ruoff, Rodney S

2008-12-01

Step-by-step controllable thermal reduction of individual graphene oxide sheets, incorporated into multiterminal field effect devices, was carried out at low temperatures (125-240 degrees C) with simultaneous electrical measurements. Symmetric hysteresis-free ambipolar (electron- and hole-type) gate dependences were observed as soon as the first measurable resistance was reached. The conductivity of each of the fabricated devices depended on the level of reduction (was increased more than 10(6) times as reduction progressed), strength of the external electrical field, density of the transport current, and temperature.

4P-NPD ultra-thin films as efficient exciton blocking layers in DBP/C70 based organic solar cells

NASA Astrophysics Data System (ADS)

Patil, Bhushan R.; Liu, Yiming; Qamar, Talha; Rubahn, Horst-Günter; Madsen, Morten

2017-09-01

Exciton blocking effects from ultra-thin layers of N,N‧-di-1-naphthalenyl-N,N‧-diphenyl [1,1‧:4‧,1″:4″,1‴-quaterphenyl]-4,4‴-diamine (4P-NPD) were investigated in small molecule-based inverted organic solar cells (OSCs) using tetraphenyldibenzoperiflanthene as the electron donor material and fullerene (C70) as the electron acceptor material. The short-circuit current density (J SC) and power conversion efficiency (PCE) of the optimized OSCs with 0.7 nm thick 4P-NPD were approximately 16% and 24% higher, respectively, compared to reference devices without exciton blocking layers (EBLs). Drift diffusion-based device modeling was conducted to model the full current density-voltage (JV) characteristics and external quantum efficiency spectrum of the OSCs, and photoluminescence measurements were conducted to investigate the exciton blocking effects with increasing thicknesses of the 4P-NPD layer. Importantly, coupled optical and electrical modeling studies of the device behaviors and exciton generation rates and densities in the active layer for different 4P-NPD layer thicknesses were conducted, in order to gain a complete understanding of the observed increase in PCE for 4P-NPD layer thicknesses up to 1 nm, and the observed decrease in PCE for layer thicknesses beyond 1 nm. This work demonstrates a route for guiding the integration of EBLs in OSC devices.

Plasma devices to guide and collimate a high density of MeV electrons.

PubMed

Kodama, R; Sentoku, Y; Chen, Z L; Kumar, G R; Hatchett, S P; Toyama, Y; Cowan, T E; Freeman, R R; Fuchs, J; Izawa, Y; Key, M H; Kitagawa, Y; Kondo, K; Matsuoka, T; Nakamura, H; Nakatsutsumi, M; Norreys, P A; Norimatsu, T; Snavely, R A; Stephens, R B; Tampo, M; Tanaka, K A; Yabuuchi, T

2004-12-23

The development of ultra-intense lasers has facilitated new studies in laboratory astrophysics and high-density nuclear science, including laser fusion. Such research relies on the efficient generation of enormous numbers of high-energy charged particles. For example, laser-matter interactions at petawatt (10(15) W) power levels can create pulses of MeV electrons with current densities as large as 10(12) A cm(-2). However, the divergence of these particle beams usually reduces the current density to a few times 10(6) A cm(-2) at distances of the order of centimetres from the source. The invention of devices that can direct such intense, pulsed energetic beams will revolutionize their applications. Here we report high-conductivity devices consisting of transient plasmas that increase the energy density of MeV electrons generated in laser-matter interactions by more than one order of magnitude. A plasma fibre created on a hollow-cone target guides and collimates electrons in a manner akin to the control of light by an optical fibre and collimator. Such plasma devices hold promise for applications using high energy-density particles and should trigger growth in charged particle optics.

Electroluminescence from metal-oxide-semiconductor devices with erbium-doped CeO{sub 2} films on silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lv, Chunyan; Department of Chemistry, Huzhou University, Zhejiang, Huzhou 313000; Zhu, Chen

2015-04-06

We report on erbium (Er)-related electroluminescence (EL) in the visible and near-infrared (NIR) from metal-oxide-semiconductor (MOS) devices with Er-doped CeO{sub 2} (CeO{sub 2}:Er) films on silicon. The onset voltage of such EL under either forward or reverse bias is smaller than 10 V. Moreover, the EL quenching can be avoidable for the CeO{sub 2}:Er-based MOS devices. Analysis on the current-voltage characteristic of the device indicates that the electron transportation at the EL-enabling voltages under either forward or reverse bias is dominated by trap-assisted tunneling mechanism. Namely, electrons in n{sup +}-Si/ITO can tunnel into the conduction band of CeO{sub 2} host viamore » defect states at sufficiently high forward/reverse bias voltages. Then, a fraction of such electrons are accelerated by electric field to become hot electrons, which impact-excite the Er{sup 3+} ions, thus leading to characteristic emissions. It is believed that this work has laid the foundation for developing viable silicon-based emitters using CeO{sub 2}:Er films.« less

Synaptic organic transistors with a vacuum-deposited charge-trapping nanosheet

NASA Astrophysics Data System (ADS)

Kim, Chang-Hyun; Sung, Sujin; Yoon, Myung-Han

2016-09-01

Organic neuromorphic devices hold great promise for unconventional signal processing and efficient human-machine interfaces. Herein, we propose novel synaptic organic transistors devised to overcome the traditional trade-off between channel conductance and memory performance. A vacuum-processed, nanoscale metallic interlayer provides an ultra-flat surface for a high-mobility molecular film as well as a desirable degree of charge trapping, allowing for low-temperature fabrication of uniform device arrays on plastic. The device architecture is implemented by widely available electronic materials in combination with conventional deposition methods. Therefore, our results are expected to generate broader interests in incorporation of organic electronics into large-area neuromorphic systems, with potential in gate-addressable complex logic circuits and transparent multifunctional interfaces receiving direct optical and cellular stimulation.

Nanotubule and Tour Molecule Based Molecular Electronics: Suggestion for a Hybrid Approach

NASA Technical Reports Server (NTRS)

Srivastava, Deepak; Saini, Subhash (Technical Monitor)

1998-01-01

Recent experimental and theoretical attempts and results indicate two distinct broad pathways towards future molecular electronic devices and architectures. The first is the approach via Tour type ladder molecules and their junctions which can be fabricated with solution phase chemical approaches. Second are fullerenes or nanotubules and their junctions which may have better conductance, switching and amplifying characteristics but can not be made through well controlled and defined chemical means. A hybrid approach combining the two pathways to take advantage of the characteristics of both is suggested. Dimension and scale of such devices would be somewhere in between isolated molecule and nanotubule based devices but it maybe possible to use self-assembly towards larger functional and logicalunits.

Organic nonvolatile resistive memory devices based on thermally deposited Au nanoparticle

NASA Astrophysics Data System (ADS)

Jin, Zhiwen; Liu, Guo; Wang, Jizheng

2013-05-01

Uniform Au nanoparticles (NPs) are formed by thermally depositing nominal 2-nm thick Au film on a 10-nm thick polyimide film formed on a Al electrode, and then covered by a thin polymer semiconductor film, which acts as an energy barrier for electrons to be injected from the other Al electrode (on top of polymer film) into the Au NPs, which are energetically electron traps in such a resistive random access memory (RRAM) device. The Au NPs based RRAM device exhibits estimated retention time of 104 s, cycle times of more than 100, and ON-OFF ratio of 102 to 103. The carrier transport properties are also analyzed by fitting the measured I-V curves with several conduction models.

Leakage current conduction in metal gate junctionless nanowire transistors

NASA Astrophysics Data System (ADS)

Oproglidis, T. A.; Karatsori, T. A.; Barraud, S.; Ghibaudo, G.; Dimitriadis, C. A.

2017-05-01

In this paper, the experimental off-state drain leakage current behavior is systematically explored in n- and p-channel junctionless nanowire transistors with HfSiON/TiN/p+-polysilicon gate stack. The analysis of the drain leakage current is based on experimental data of the gate leakage current. It has been shown that the off-state drain leakage current in n-channel devices is negligible, whereas in p-channel devices it is significant and dramatically increases with drain voltage. The overall results indicate that the off-state drain leakage current in p-channel devices is mainly due to trap-assisted Fowler-Nordheim tunneling of electrons through the gate oxide of electrons from the metal gate to the silicon layer near the drain region.

Enhancement of Seebeck coefficient in graphene superlattices by electron filtering technique

NASA Astrophysics Data System (ADS)

Mishra, Shakti Kumar; Kumar, Amar; Kaushik, Chetan Prakash; Dikshit, Biswaranjan

2018-01-01

We show theoretically that the Seebeck coefficient and the thermoelectric figure of merit can be increased by using electron filtering technique in graphene superlattice based thermoelectric devices. The average Seebeck coefficient for graphene-based thermoelectric devices is proportional to the integral of the distribution of Seebeck coefficient versus energy of electrons. The low energy electrons in the distribution curve are found to reduce the average Seebeck coefficient as their contribution is negative. We show that, with electron energy filtering technique using multiple graphene superlattice heterostructures, the low energy electrons can be filtered out and the Seebeck coefficient can be increased. The multiple graphene superlattice heterostructures can be formed by graphene superlattices with different periodic electric potentials applied above the superlattice. The overall electronic band gap of the multiple heterostructures is dependent upon the individual band gap of the graphene superlattices and can be tuned by varying the periodic electric potentials. The overall electronic band gap of the multiple heterostructures has to be properly chosen such that, the low energy electrons which cause negative Seebeck distribution in single graphene superlattice thermoelectric devices fall within the overall band gap formed by the multiple heterostructures. Although the electrical conductance is decreased in this technique reducing the thermoelectric figure of merit, the overall figure of merit is increased due to huge increase in Seebeck coefficient and its square dependency upon the Seebeck coefficient. This is an easy technique to make graphene superlattice based thermoelectric devices more efficient and has the potential to significantly improve the technology of energy harvesting and sensors.

Air-Stable n-type Conductors and Semiconductors

DTIC Science & Technology

2015-07-14

Distribution approved for public release.   10   4. Stretchable and self - healing materials and device development. Future electronic devices...that can self - heal at room temperature repeatedly and have electrical conductivity. Such materials, mimicking human skin functions, may have...particle polymer composites we then developed an elastic nanocomposite material with the ability to rapidly self - heal at room temperature by combining

Effect of Phase-Breaking Events on Electron Transport in Mesoscopic and Nanodevices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Meunier, Vincent; Mintmire, John W; Thushari, Jayasekera

2008-01-01

Existing ballistic models for electron transport in mesoscopic and nanoscale systems break down as the size of the device becomes longer than the phase coherence length of electrons in the system. Krstic et al. experimentally observed that the current in single-wall carbon nanotube systems can be regarded as a combination of a coherent part and a noncoherent part. In this article, we discuss the use of Buettiker phase-breaking technique to address partially coherent electron transport, generalize that to a multichannel problem, and then study the effect of phase-breaking events on the electron transport in two-terminal graphene nanoribbon devices. We alsomore » investigate the difference between the pure-phase randomization and phase/momentum randomization boundary conditions. While momentum randomization adds an extra resistance caused by backward scattering, pure-phase randomization smooths the conductance oscillations because of interference.« less

Resonant tunneling of 1-dimensional electrons across an array of 3-dimensionally confined potential wells

NASA Astrophysics Data System (ADS)

Allee, D. R.; Chou, S. Y.; Harris, J. S.; Pease, R. F. W.

A lateral resonant tunneling field effect transistor has been fabricated with a gate electrode in the form of a railway such that the two rails form a lateral double barrier potential at the GaAs/AlGaAs interface. The ties confine the electrons in the third dimension forming an array of potential boxes or three dimensionally confined potential wells. The width of the ties and rails is 50nm; the spacings between the ties and between the two rails are 230nm and 150nm respectively. The ties are 750nm long and extend beyond the the two rails forming one dimensional wires on either side. Conductance oscillations are observed in the drain current at 4.2K as the gate voltage is scanned. Comparison with devices with a solid gate, and with a monorail gate with ties fabricated on the same wafer suggest that these conductance oscillations are electron resonant tunneling from one dimensional wires through the quasi-bound states of the three dimensionally confined potential wells. Comparison with a device with a two rail gate without ties (previously published) indicates that additional confinement due to the ties enhances the strength of the conductance oscillations.

Microwave a.c. conductivity of domain walls in ferroelectric thin films

DOE PAGES

Tselev, Alexander; Yu, Pu; Cao, Ye; ...

2016-05-31

Ferroelectric domain walls are of great interest as elementary building blocks for future electronic devices due to their intrinsic few-nanometre width, multifunctional properties and field-controlled topology. To realize the electronic functions, domain walls are required to be electrically conducting and addressable non-destructively. However, these properties have been elusive because conducting walls have to be electrically charged, which makes them unstable and uncommon in ferroelectric materials. Here we reveal that spontaneous and recorded domain walls in thin films of lead zirconate and bismuth ferrite exhibit large conductance at microwave frequencies despite being insulating at d.c. We explain this effect by morphologicalmore » roughening of the walls and local charges induced by disorder with the overall charge neutrality. a.c. conduction is immune to large contact resistance enabling completely non-destructive walls read-out. Finally, this demonstrates a technological potential for harnessing a.c. conduction for oxide electronics and other materials with poor d.c. conduction, particularly at the nanoscale.« less

Microwave a.c. conductivity of domain walls in ferroelectric thin films

PubMed Central

Tselev, Alexander; Yu, Pu; Cao, Ye; Dedon, Liv R.; Martin, Lane W.; Kalinin, Sergei V.; Maksymovych, Petro

2016-01-01

Ferroelectric domain walls are of great interest as elementary building blocks for future electronic devices due to their intrinsic few-nanometre width, multifunctional properties and field-controlled topology. To realize the electronic functions, domain walls are required to be electrically conducting and addressable non-destructively. However, these properties have been elusive because conducting walls have to be electrically charged, which makes them unstable and uncommon in ferroelectric materials. Here we reveal that spontaneous and recorded domain walls in thin films of lead zirconate and bismuth ferrite exhibit large conductance at microwave frequencies despite being insulating at d.c. We explain this effect by morphological roughening of the walls and local charges induced by disorder with the overall charge neutrality. a.c. conduction is immune to large contact resistance enabling completely non-destructive walls read-out. This demonstrates a technological potential for harnessing a.c. conduction for oxide electronics and other materials with poor d.c. conduction, particularly at the nanoscale. PMID:27240997

Thermal Conductivity of Diamond Composites

PubMed Central

Kidalov, Sergey V.; Shakhov, Fedor M.

2009-01-01

A major problem challenging specialists in present-day materials sciences is the development of compact, cheap to fabricate heat sinks for electronic devices, primarily for computer processors, semiconductor lasers, high-power microchips, and electronics components. The materials currently used for heat sinks of such devices are aluminum and copper, with thermal conductivities of about 250 W/(m·K) and 400 W/(m·K), respectively. Significantly, the thermal expansion coefficient of metals differs markedly from those of the materials employed in semiconductor electronics (mostly silicon); one should add here the low electrical resistivity metals possess. By contrast, natural single-crystal diamond is known to feature the highest thermal conductivity of all the bulk materials studied thus far, as high as 2,200 W/(m·K). Needless to say, it cannot be applied in heat removal technology because of high cost. Recently, SiC- and AlN-based ceramics have started enjoying wide use as heat sink materials; the thermal conductivity of such composites, however, is inferior to that of metals by nearly a factor two. This prompts a challenging scientific problem to develop diamond-based composites with thermal characteristics superior to those of aluminum and copper, adjustable thermal expansion coefficient, low electrical conductivity and a moderate cost, below that of the natural single-crystal diamond. The present review addresses this problem and appraises the results reached by now in studying the possibility of developing composites in diamond-containing systems with a view of obtaining materials with a high thermal conductivity.

A Combination of Boron Nitride Nanotubes and Cellulose Nanofibers for the Preparation of a Nanocomposite with High Thermal Conductivity.

PubMed

Zeng, Xiaoliang; Sun, Jiajia; Yao, Yimin; Sun, Rong; Xu, Jian-Bin; Wong, Ching-Ping

2017-05-23

With the current development of modern electronics toward miniaturization, high-degree integration and multifunctionalization, considerable heat is accumulated, which results in the thermal failure or even explosion of modern electronics. The thermal conductivity of materials has thus attracted much attention in modern electronics. Although polymer composites with enhanced thermal conductivity are expected to address this issue, achieving higher thermal conductivity (above 10 W m -1 K -1 ) at filler loadings below 50.0 wt % remains challenging. Here, we report a nanocomposite consisting of boron nitride nanotubes and cellulose nanofibers that exhibits high thermal conductivity (21.39 W m -1 K -1 ) at 25.0 wt % boron nitride nanotubes. Such high thermal conductivity is attributed to the high intrinsic thermal conductivity of boron nitride nanotubes and cellulose nanofibers, the one-dimensional structure of boron nitride nanotubes, and the reduced interfacial thermal resistance due to the strong interaction between the boron nitride nanotubes and cellulose nanofibers. Using the as-prepared nanocomposite as a flexible printed circuit board, we demonstrate its potential usefulness in electronic device-cooling applications. This thermally conductive nanocomposite has promising applications in thermal interface materials, printed circuit boards or organic substrates in electronics and could supplement conventional polymer-based materials.

40 CFR 63.4568 - What are the requirements for continuous parameter monitoring system installation, operation, and...

Code of Federal Regulations, 2013 CFR

2013-07-01

... temperature simulation devices. (v) Conduct a visual inspection of each sensor every quarter if redundant... simulations or via relative accuracy testing. (v) Conduct an accuracy audit every quarter and after every deviation. Accuracy audit methods include comparisons of sensor values with electronic signal simulations or...

40 CFR 63.4568 - What are the requirements for continuous parameter monitoring system installation, operation, and...

Code of Federal Regulations, 2014 CFR

2014-07-01

... temperature simulation devices. (v) Conduct a visual inspection of each sensor every quarter if redundant... simulations or via relative accuracy testing. (v) Conduct an accuracy audit every quarter and after every deviation. Accuracy audit methods include comparisons of sensor values with electronic signal simulations or...

40 CFR 63.4568 - What are the requirements for continuous parameter monitoring system installation, operation, and...

Code of Federal Regulations, 2012 CFR

2012-07-01

... temperature simulation devices. (v) Conduct a visual inspection of each sensor every quarter if redundant... simulations or via relative accuracy testing. (v) Conduct an accuracy audit every quarter and after every deviation. Accuracy audit methods include comparisons of sensor values with electronic signal simulations or...

University of Maryland MRSEC - Facilities: SEM/STM/AFM

Science.gov Websites

MRSEC Templates Opportunities Search Home » Facilities » SEM/STM/AFM Shared Experimental Facilities conducting and non conducting samples. The sample stage permits electronic device imaging under operational Specifications: Image Modes - STM, STS, MFM, EFM, SKPM, contact- and non-contact AFM Three Sample Contacts 0.1 nm

CDC Vital Signs: Alcohol Screening and Counseling

MedlinePlus

... these services in state and community programs, using computers, smartphones, and other electronic devices. Help conduct community ... be made worse by drinking. Top of Page Science Behind the Issue MMWR Science Clips Related Pages ...

Statistical study of conductance properties in one-dimensional quantum wires focusing on the 0.7 anomaly

NASA Astrophysics Data System (ADS)

Smith, L. W.; Al-Taie, H.; Sfigakis, F.; See, P.; Lesage, A. A. J.; Xu, B.; Griffiths, J. P.; Beere, H. E.; Jones, G. A. C.; Ritchie, D. A.; Kelly, M. J.; Smith, C. G.

2014-07-01

The properties of conductance in one-dimensional (1D) quantum wires are statistically investigated using an array of 256 lithographically identical split gates, fabricated on a GaAs/AlGaAs heterostructure. All the split gates are measured during a single cooldown under the same conditions. Electron many-body effects give rise to an anomalous feature in the conductance of a one-dimensional quantum wire, known as the "0.7 structure" (or "0.7 anomaly"). To handle the large data set, a method of automatically estimating the conductance value of the 0.7 structure is developed. Large differences are observed in the strength and value of the 0.7 structure [from 0.63 to 0.84×(2e2/h)], despite the constant temperature and identical device design. Variations in the 1D potential profile are quantified by estimating the curvature of the barrier in the direction of electron transport, following a saddle-point model. The 0.7 structure appears to be highly sensitive to the specific confining potential within individual devices.

Applications of high thermal conductivity composites to electronics and spacecraft thermal design

NASA Technical Reports Server (NTRS)

Sharp, G. Richard; Loftin, Timothy A.

1990-01-01

Recently, high thermal conductivity continuous graphite fiber reinforced metal matrix composites (MMC's) have become available that can save much weight over present methods of heat conduction. These materials have two or three times higher thermal conductivity in the fiber direction than the pure metals when compared on a thermal conductivity to weight basis. Use of these materials for heat conduction purposes can result in weight savings of from 50 to 70 percent over structural aluminum. Another significant advantage is that these materials can be used without the plumbing and testing complexities that accompany the use of liquid heat pipes. A spinoff of this research was the development of other MMC's as electronic device heat sinks. These use particulates rather than fibers and are formulated to match the coefficient of thermal expansion of electronic substrates in order to alleviate thermally induced stresses. The development of both types of these materials as viable weight saving substitutes for traditional methods of thermal control for electronics packaging and also for spacecraft thermal control applications are the subject of this report.

Printable Transparent Conductive Films for Flexible Electronics.

PubMed

Li, Dongdong; Lai, Wen-Yong; Zhang, Yi-Zhou; Huang, Wei

2018-03-01

Printed electronics are an important enabling technology for the development of low-cost, large-area, and flexible optoelectronic devices. Transparent conductive films (TCFs) made from solution-processable transparent conductive materials, such as metal nanoparticles/nanowires, carbon nanotubes, graphene, and conductive polymers, can simultaneously exhibit high mechanical flexibility, low cost, and better photoelectric properties compared to the commonly used sputtered indium-tin-oxide-based TCFs, and are thus receiving great attention. This Review summarizes recent advances of large-area flexible TCFs enabled by several roll-to-roll-compatible printed techniques including inkjet printing, screen printing, offset printing, and gravure printing using the emerging transparent conductive materials. The preparation of TCFs including ink formulation, substrate treatment, patterning, and postprocessing, and their potential applications in solar cells, organic light-emitting diodes, and touch panels are discussed in detail. The rational combination of a variety of printed techniques with emerging transparent conductive materials is believed to extend the opportunities for the development of printed electronics within the realm of flexible electronics and beyond. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Differential Electrochemical Conductance Imaging at the Nanoscale.

PubMed

López-Martínez, Montserrat; Artés, Juan Manuel; Sarasso, Veronica; Carminati, Marco; Díez-Pérez, Ismael; Sanz, Fausto; Gorostiza, Pau

2017-09-01

Electron transfer in proteins is essential in crucial biological processes. Although the fundamental aspects of biological electron transfer are well characterized, currently there are no experimental tools to determine the atomic-scale electronic pathways in redox proteins, and thus to fully understand their outstanding efficiency and environmental adaptability. This knowledge is also required to design and optimize biomolecular electronic devices. In order to measure the local conductance of an electrode surface immersed in an electrolyte, this study builds upon the current-potential spectroscopic capacity of electrochemical scanning tunneling microscopy, by adding an alternating current modulation technique. With this setup, spatially resolved, differential electrochemical conductance images under bipotentiostatic control are recorded. Differential electrochemical conductance imaging allows visualizing the reversible oxidation of an iron electrode in borate buffer and individual azurin proteins immobilized on atomically flat gold surfaces. In particular, this method reveals submolecular regions with high conductance within the protein. The direct observation of nanoscale conduction pathways in redox proteins and complexes enables important advances in biochemistry and bionanotechnology. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Synthesis and electron storage characteristics of isolated silver nanodots on/embedded in Al 2O 3 gate dielectric

NASA Astrophysics Data System (ADS)

Wang, Q.; Song, Z. T.; Liu, W. L.; Lin, C. L.; Wang, T. H.

2004-05-01

Monolayer-isolated silver (Ag) nanodots with the average diameter down to 7 nm are synthesized on Al 2O 3/Si substrate by vacuum electron-beam evaporation followed by annealing at 400 °C in N 2 ambient. Metal-insulator-silicon (MIS) structures with Ag nanodots embedded in Al 2O 3 gate dielectric are fabricated. Clear electron storage effect with the flatband voltage shift of 1.3 eV is observed through capacitance-conductance and conductance-voltage measurements. Our results demonstrate the feasibility of applying Ag nanodots for nanocrystal floating-gate memory devices.

Local gate control in carbon nanotube quantum devices

NASA Astrophysics Data System (ADS)

Biercuk, Michael Jordan

This thesis presents transport measurements of carbon nanotube electronic devices operated in the quantum regime. Nanotubes are contacted by source and drain electrodes, and multiple lithographically-patterned electrostatic gates are aligned to each device. Transport measurements of device conductance or current as a function of local gate voltages reveal that local gates couple primarily to the proximal section of the nanotube, hence providing spatially localized control over carrier density along the nanotube length. Further, using several different techniques we are able to produce local depletion regions along the length of a tube. This phenomenon is explored in detail for different contact metals to the nanotube. We utilize local gating techniques to study multiple quantum dots in carbon nanotubes produced both by naturally occurring defects, and by the controlled application of voltages to depletion gates. We study double quantum dots in detail, where transport measurements reveal honeycomb charge stability diagrams. We extract values of energy-level spacings, capacitances, and interaction energies for this system, and demonstrate independent control over all relevant tunneling rates. We report rf-reflectometry measurements of gate-defined carbon nanotube quantum dots with integrated charge sensors. Aluminum rf-SETs are electrostatically coupled to carbon nanotube devices and detect single electron charging phenomena in the Coulomb blockade regime. Simultaneous correlated measurements of single electron charging are made using reflected rf power from the nanotube itself and from the rf-SET on microsecond time scales. We map charge stability diagrams for the nanotube quantum dot via charge sensing, observing Coulomb charging diamonds beyond the first order. Conductance measurements of carbon nanotubes containing gated local depletion regions exhibit plateaus as a function of gate voltage, spaced by approximately 1e2/h, the quantum of conductance for a single (non-degenerate) mode. Plateau structure is investigated as a function of bias voltage, temperature, and magnetic field. We speculate on the origin of this surprising quantization, which appears to lack band and spin degeneracy.

Observation of room temperature negative differential resistance in multi-layer heterostructures of quantum dots and conducting polymers.

PubMed

Kannan, V; Kim, M R; Chae, Y S; Ramana, Ch V V; Rhee, J K

2011-01-14

Multi-layer heterostructure negative differential resistance devices based on poly-[2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylenevinylene] (MEH-PPV) conducting polymer and CdSe quantum dots is reported. The conducting polymer MEH-PPV acts as a barrier while CdSe quantum dots form the well layer. The devices exhibit negative differential resistance (NDR) at low voltages. For these devices, strong negative differential resistance is observed at room temperature. A maximum value of 51 for the peak-to-valley ratio of current is reported. Tunneling of electrons through the discrete quantum confined states in the CdSe quantum dots is believed to be responsible for the multiple peaks observed in the I-V measurement. Depending on the observed NDR signature, operating mechanisms are explored based on resonant tunneling and Coulomb blockade effects.

GaN light-emitting device based on ionic liquid electrolyte

NASA Astrophysics Data System (ADS)

Hirai, Tomoaki; Sakanoue, Tomo; Takenobu, Taishi

2018-06-01

Ionic liquids (ILs) are attractive materials for fabricating unique hybrid devices based on electronics and electrochemistry; thus, IL-gated transistors and organic light-emitting devices of light-emitting electrochemical cells (LECs) are investigated for future low-voltage and high-performance devices. In LECs, voltage application induces the formation of electrochemically doped p–n homojunctions owing to ion rearrangements in composites of semiconductors and electrolytes, and achieves electron–hole recombination for light emission at the homojunctions. In this work, we applied this concept of IL-induced electrochemical doping to the fabrication of GaN-based light-emitting devices. We found that voltage application to the layered IL/GaN structure accumulated electrons on the GaN surface owing to ion rearrangements and improved the conductivity of GaN. The ion rearrangement also enabled holes to be injected by the strong electric field of electric double layers on hole injection contacts. This simultaneous injection of holes and electrons into GaN mediated by ions achieves light emission at a low voltage of around 3.4 V. The light emission from the simple IL/GaN structure indicates the usefulness of an electrochemical technique in generating light emission with great ease of fabrication.

Electronic nose for detecting multiple targets

NASA Astrophysics Data System (ADS)

Chakraborty, Anirban; Parthasarathi, Ganga; Poddar, Rakesh; Zhao, Weiqiang; Luo, Cheng

2006-05-01

The discovery of high conductivity in doped polyacetylene in 1977 (garnering the 2000 Nobel Prize in Chemistry for the three discovering scientists) has attracted considerable interest in the application of polymers as the semiconducting and conducting materials due to their promising potential to replace silicon and metals in building devices. Previous and current efforts in developing conducting polymer microsystems mainly focus on generating a device of a single function. When multiple micropatterns made of different conducting polymers are produced on the same substrate, many microsystems of multiple functions can be envisioned. For example, analogous to the mammalian olfactory system which includes over 1,000 receptor genes in detecting various odors (e.g., beer, soda etc.), a sensor consisting of multiple distinct conducting polymer sensing elements will be capable of detecting a number of analytes simultaneously. However, existing techniques present significant technical challenges of degradation, low throughput, low resolution, depth of field, and/or residual layer in producing conducting polymer microstructures. To circumvent these challenges, an intermediate-layer lithography method developed in our group is used to generate multiple micropatterns made of different, commonly used conducting polymers, Polypyrrole (PPy), Poly(3,4-ethylenedioxy)thiophene (PEDOT) and Polyaniline (PANI). The generated multiple micropatterns are further used in an "electronic nose" to detect water vapor, glucose, toluene and acetone.

Electronic Transport and Quantum Hall Effect in Bipolar Graphene p-n-p Junctions

NASA Astrophysics Data System (ADS)

Özyilmaz, Barbaros; Jarillo-Herrero, Pablo; Efetov, Dmitri; Abanin, Dmitry A.; Levitov, Leonid S.; Kim, Philip

2007-10-01

We have developed a device fabrication process to pattern graphene into nanostructures of arbitrary shape and control their electronic properties using local electrostatic gates. Electronic transport measurements have been used to characterize locally gated bipolar graphene p-n-p junctions. We observe a series of fractional quantum Hall conductance plateaus at high magnetic fields as the local charge density is varied in the p and n regions. These fractional plateaus, originating from chiral edge states equilibration at the p-n interfaces, exhibit sensitivity to interedge backscattering which is found to be strong for some of the plateaus and much weaker for other plateaus. We use this effect to explore the role of backscattering and estimate disorder strength in our graphene devices.

Electron transport in doped fullerene molecular junctions

NASA Astrophysics Data System (ADS)

Kaur, Milanpreet; Sawhney, Ravinder Singh; Engles, Derick

The effect of doping on the electron transport of molecular junctions is analyzed in this paper. The doped fullerene molecules are stringed to two semi-infinite gold electrodes and analyzed at equilibrium and nonequilibrium conditions of these device configurations. The contemplation is done using nonequilibrium Green’s function (NEGF)-density functional theory (DFT) to evaluate its density of states (DOS), transmission coefficient, molecular orbitals, electron density, charge transfer, current, and conductance. We conclude from the elucidated results that Au-C16Li4-Au and Au-C16Ne4-Au devices behave as an ordinary p-n junction diode and a Zener diode, respectively. Moreover, these doped fullerene molecules do not lose their metallic nature when sandwiched between the pair of gold electrodes.

Spirally Structured Conductive Composites for Highly Stretchable, Robust Conductors and Sensors.

PubMed

Wu, Xiaodong; Han, Yangyang; Zhang, Xinxing; Lu, Canhui

2017-07-12

Flexible and stretchable electronics are highly desirable for next generation devices. However, stretchability and conductivity are fundamentally difficult to combine for conventional conductive composites, which restricts their widespread applications especially as stretchable electronics. Here, we innovatively develop a new class of highly stretchable and robust conductive composites via a simple and scalable structural approach. Briefly, carbon nanotubes are spray-coated onto a self-adhesive rubber film, followed by rolling up the film completely to create a spirally layered structure within the composites. This unique spirally layered structure breaks the typical trade-off between stretchability and conductivity of traditional conductive composites and, more importantly, restrains the generation and propagation of mechanical microcracks in the conductive layer under strain. Benefiting from such structure-induced advantages, the spirally layered composites exhibit high stretchability and flexibility, good conductive stability, and excellent robustness, enabling the composites to serve as highly stretchable conductors (up to 300% strain), versatile sensors for monitoring both subtle and large human activities, and functional threads for wearable electronics. This novel and efficient methodology provides a new design philosophy for manufacturing not only stretchable conductors and sensors but also other stretchable electronics, such as transistors, generators, artificial muscles, etc.

Controlled assembly of In2O3 nanowires on electronic circuits using scanning optical tweezers.

PubMed

Lee, Song-Woo; Jo, Gunho; Lee, Takhee; Lee, Yong-Gu

2009-09-28

In(2)O(3) nanowires can be used effectively as building blocks in the production of electronic circuits used in transparent and flexible electronic devices. The fabrication of these devices requires a controlled assembly of nanowires at crucial places and times. However, this kind of controlled assembly, which results in the fusion of nanowires to circuits, is still very difficult to execute. In this study, we demonstrate the benefits of using various lengths of In(2)O(3) nanowires by using non-contact mechanisms, such as scanning optical tweezers, to place them on designated targets during the fabrication process. Furthermore, these nanowires can be stabilized at both ends of the conducting wires using a focused laser, and later in the process, the annealed technique, so that proper flow of electrons is affected.

Final report for the DOE Early Career Award #DE-SC0003912

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jayaraman, Arthi

This DoE supported early career project was aimed at developing computational models, theory and simulation methods that would be then be used to predict assembly and morphology in polymer nanocomposites. In particular, the focus was on composites in active layers of devices, containing conducting polymers that act as electron donors and nanoscale additives that act as electron acceptors. During the course this work, we developed the first of its kind molecular models to represent conducting polymers enabling simulations at the experimentally relevant length and time scales. By comparison with experimentally observed morphologies we validated these models. Furthermore, using these modelsmore » and molecular dynamics simulations on graphical processing units (GPUs) we predicted the molecular level design features in polymers and additive that lead to morphologies with optimal features for charge carrier behavior in solar cells. Additionally, we also predicted computationally new design rules for better dispersion of additives in polymers that have been confirmed through experiments. Achieving dispersion in polymer nanocomposites is valuable to achieve controlled macroscopic properties of the composite. The results obtained during the course of this DOE funded project enables optimal design of higher efficiency organic electronic and photovoltaic devices and improve every day life with engineering of these higher efficiency devices.« less

Transport properties of a quantum dot and a quantum ring in series

NASA Astrophysics Data System (ADS)

Seo, Minky; Chung, Yunchul

2018-01-01

The decoherence mechanism of an electron interferometer is studied by using a serial quantum dot and ring device. By coupling a quantum dot to a quantum ring (closed-loop electron interferometer), we were able to observe both Coulomb oscillations and Aharonov-Bohm interference simultaneously. The coupled device behaves like an ordinary double quantum dot at zero magnetic field while the conductance of the Coulomb blockade peak is modulated by the electron interference at finite magnetic fields. By injecting one electron at a time (by exploiting the sequential tunneling of a quantum dot) into the interferometer, we were able to study the visibility of the electron interference at non-zero bias voltage. The visibility was found to decay rapidly as the electron energy was increased, which was consistent with the recently reported result for an electron interferometer. However, the lobe pattern and the sudden phase jump became less prominent. These results imply that the lobe pattern and the phase jump in an electron interferometer may be due to electron interactions inside the interferometer, as is predicted by the theory.

Laser Processed Silver Nanowire Network Transparent Electrodes for Novel Electronic Devices

NASA Astrophysics Data System (ADS)

Spechler, Joshua Allen

Silver nanowire network transparent conducting layers are poised to make headway into a space previously dominated by transparent conducting oxides due to the promise of a flexible, scaleable, lab-atmosphere processable alternative. However, there are many challenges standing in the way between research scale use and consumer technology scale adaptation of this technology. In this thesis we will explore many, and overcome a few of these challenges. We will address the poor conductivity at the narrow nanowire-nanowire junction points in the network by developing a laser based process to weld nanowires together on a microscopic scale. We address the need for a comparative metric for transparent conductors in general, by taking a device level rather than a component level view of these layers. We also address the mechanical, physical, and thermal limitations to the silver nanowire networks by making composites from materials including a colorless polyimide and titania sol-gel. Additionally, we verify our findings by integrating these processes into devices. Studying a hybrid organic/inorganic heterojunction photovoltaic device we show the benefits of a laser processed electrode. Green phosphorescent organic light emitting diodes fabricated on a solution phase processed silver nanowire based electrode show favorable device metrics compared to a conductive oxide electrode based control. The work in this thesis is intended to push the adoption of silver nanowire networks to further allow new device architectures, and thereby new device applications.

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures.

PubMed

Chen, Ruei-San; Tang, Chih-Che; Shen, Wei-Chu; Huang, Ying-Sheng

2015-12-05

Layer semiconductors with easily processed two-dimensional (2D) structures exhibit indirect-to-direct bandgap transitions and superior transistor performance, which suggest a new direction for the development of next-generation ultrathin and flexible photonic and electronic devices. Enhanced luminescence quantum efficiency has been widely observed in these atomically thin 2D crystals. However, dimension effects beyond quantum confinement thicknesses or even at the micrometer scale are not expected and have rarely been observed. In this study, molybdenum diselenide (MoSe2) layer crystals with a thickness range of 6-2,700 nm were fabricated as two- or four-terminal devices. Ohmic contact formation was successfully achieved by the focused-ion beam (FIB) deposition method using platinum (Pt) as a contact metal. Layer crystals with various thicknesses were prepared through simple mechanical exfoliation by using dicing tape. Current-voltage curve measurements were performed to determine the conductivity value of the layer nanocrystals. In addition, high-resolution transmission electron microscopy, selected-area electron diffractometry, and energy-dispersive X-ray spectroscopy were used to characterize the interface of the metal-semiconductor contact of the FIB-fabricated MoSe2 devices. After applying the approaches, the substantial thickness-dependent electrical conductivity in a wide thickness range for the MoSe2-layer semiconductor was observed. The conductivity increased by over two orders of magnitude from 4.6 to 1,500 Ω(-) (1) cm(-) (1), with a decrease in the thickness from 2,700 to 6 nm. In addition, the temperature-dependent conductivity indicated that the thin MoSe2 multilayers exhibited considerably weak semiconducting behavior with activation energies of 3.5-8.5 meV, which are considerably smaller than those (36-38 meV) of the bulk. Probable surface-dominant transport properties and the presence of a high surface electron concentration in MoSe2 are proposed. Similar results can be obtained for other layer semiconductor materials such as MoS2 and WS2.

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures

PubMed Central

Chen, Ruei-San; Tang, Chih-Che; Shen, Wei-Chu; Huang, Ying-Sheng

2015-01-01

Layer semiconductors with easily processed two-dimensional (2D) structures exhibit indirect-to-direct bandgap transitions and superior transistor performance, which suggest a new direction for the development of next-generation ultrathin and flexible photonic and electronic devices. Enhanced luminescence quantum efficiency has been widely observed in these atomically thin 2D crystals. However, dimension effects beyond quantum confinement thicknesses or even at the micrometer scale are not expected and have rarely been observed. In this study, molybdenum diselenide (MoSe2) layer crystals with a thickness range of 6-2,700 nm were fabricated as two- or four-terminal devices. Ohmic contact formation was successfully achieved by the focused-ion beam (FIB) deposition method using platinum (Pt) as a contact metal. Layer crystals with various thicknesses were prepared through simple mechanical exfoliation by using dicing tape. Current-voltage curve measurements were performed to determine the conductivity value of the layer nanocrystals. In addition, high-resolution transmission electron microscopy, selected-area electron diffractometry, and energy-dispersive X-ray spectroscopy were used to characterize the interface of the metal–semiconductor contact of the FIB-fabricated MoSe2 devices. After applying the approaches, the substantial thickness-dependent electrical conductivity in a wide thickness range for the MoSe2-layer semiconductor was observed. The conductivity increased by over two orders of magnitude from 4.6 to 1,500 Ω−1 cm−1, with a decrease in the thickness from 2,700 to 6 nm. In addition, the temperature-dependent conductivity indicated that the thin MoSe2 multilayers exhibited considerably weak semiconducting behavior with activation energies of 3.5-8.5 meV, which are considerably smaller than those (36-38 meV) of the bulk. Probable surface-dominant transport properties and the presence of a high surface electron concentration in MoSe2 are proposed. Similar results can be obtained for other layer semiconductor materials such as MoS2 and WS2. PMID:26710105

Mixed Carrier Conduction in Modulation-doped Field Effect Transistors

NASA Technical Reports Server (NTRS)

Schacham, S. E.; Haugland, E. J.; Mena, R. A.; Alterovitz, S. A.

1995-01-01

The contribution of more than one carrier to the conductivity in modulation-doped field effect transistors (MODFET) affects the resultant mobility and complicates the characterization of these devices. Mixed conduction arises from the population of several subbands in the two-dimensional electron gas (2DEG), as well as the presence of a parallel path outside the 2DEG. We characterized GaAs/AlGaAs MODFET structures with both delta and continuous doping in the barrier. Based on simultaneous Hall and conductivity analysis we conclude that the parallel conduction is taking place in the AlGaAs barrier, as indicated by the carrier freezeout and activation energy. Thus, simple Hall analysis of these structures may lead to erroneous conclusions, particularly for real-life device structures. The distribution of the 2D electrons between the various confined subbands depends on the doping profile. While for a continuously doped barrier the Shubnikov-de Haas analysis shows superposition of two frequencies for concentrations below 10(exp 12) cm(exp -2), for a delta doped structure the superposition is absent even at 50% larger concentrations. This result is confirmed by self-consistent analysis, which indicates that the concentration of the second subband hardly increases.

Electron localization and magnetism in SrRuO3 with non-magnetic cation substitution

NASA Astrophysics Data System (ADS)

Tong, W.; Huang, F.-Q.; Chen, I.-W.

2011-03-01

The destruction of the ferromagnetism of alloyed SrRuO3 can be caused by electron localization at the substitution sites. Among all the non-magnetic cations that enter the B site, Zr4 + is the least disruptive to conductivity and ferromagnetism. This is because Zr4 + does not cause any charge disorder, and its empty d electron states which are poorly matched in energy with the Ru t2g4 states cause the least resonance scattering of Ru's d electrons. Conducting Sr(Ru, Zr)O3 may be used as an electrode for perovskite-based thin film devices, while its insulating counterpart provides unprecedented magnetoresistance, seldom seen in other non-manganite and non-cobaltite perovskites.

High Performance Graphene Nano-ribbon Thermoelectric Devices by Incorporation and Dimensional Tuning of Nanopores

PubMed Central

Sharafat Hossain, Md; Al-Dirini, Feras; Hossain, Faruque M.; Skafidas, Efstratios

2015-01-01

Thermoelectric properties of Graphene nano-ribbons (GNRs) with nanopores (NPs) are explored for a range of pore dimensions in order to achieve a high performance two-dimensional nano-scale thermoelectric device. We reduce thermal conductivity of GNRs by introducing pores in them in order to enhance their thermoelectric performance. The electrical properties (Seebeck coefficient and conductivity) of the device usually degrade with pore inclusion; however, we tune the pore to its optimal dimension in order to minimize this degradation, enhancing the overall thermoelectric performance (high ZT value) of our device. We observe that the side channel width plays an important role to achieve optimal performance while the effect of pore length is less pronounced. This result is consistent with the fact that electronic conduction in GNRs is dominated along its edges. Ballistic transport regime is assumed and a semi-empirical method using Huckel basis set is used to obtain the electrical properties, while the phononic system is characterized by Tersoff empirical potential model. The proposed device structure has potential applications as a nanoscale local cooler and as a thermoelectric power generator. PMID:26083450

High Performance Graphene Nano-ribbon Thermoelectric Devices by Incorporation and Dimensional Tuning of Nanopores.

PubMed

Hossain, Md Sharafat; Al-Dirini, Feras; Hossain, Faruque M; Skafidas, Efstratios

2015-06-17

Thermoelectric properties of Graphene nano-ribbons (GNRs) with nanopores (NPs) are explored for a range of pore dimensions in order to achieve a high performance two-dimensional nano-scale thermoelectric device. We reduce thermal conductivity of GNRs by introducing pores in them in order to enhance their thermoelectric performance. The electrical properties (Seebeck coefficient and conductivity) of the device usually degrade with pore inclusion; however, we tune the pore to its optimal dimension in order to minimize this degradation, enhancing the overall thermoelectric performance (high ZT value) of our device. We observe that the side channel width plays an important role to achieve optimal performance while the effect of pore length is less pronounced. This result is consistent with the fact that electronic conduction in GNRs is dominated along its edges. Ballistic transport regime is assumed and a semi-empirical method using Huckel basis set is used to obtain the electrical properties, while the phononic system is characterized by Tersoff empirical potential model. The proposed device structure has potential applications as a nanoscale local cooler and as a thermoelectric power generator.

Effect of Electrostatic Discharge on Electrical Characteristics of Discrete Electronic Components

NASA Technical Reports Server (NTRS)

Wysocki, Phil; Vashchenko, Vladislav; Celaya, Jose; Saha, Sankalita; Goebel, Kai

2009-01-01

This article reports on preliminary results of a study conducted to examine how temporary electrical overstress seed fault conditions in discrete power electronic components that cannot be detected with reliability tests but impact longevity of the device. These defects do not result in formal parametric failures per datasheet specifications, but result in substantial change in the electrical characteristics when compared with pristine device parameters. Tests were carried out on commercially available 600V IGBT devices using transmission line pulse (TLP) and system level ESD stress. It was hypothesized that the ESD causes local damage during the ESD discharge which may greatly accelerate degradation mechanisms and thus reduce the life of the components. This hypothesis was explored in simulation studies where different types of damage were imposed to different parts of the device. Experimental results agree qualitatively with the simulation for a number of tests which will motivate more in-depth modeling of the damage.

Defect-related electroluminescence from metal-oxide-semiconductor devices with ZrO2 films on silicon

NASA Astrophysics Data System (ADS)

Lv, Chunyan; Zhu, Chen; Wang, Canxing; Li, Dongsheng; Ma, Xiangyang; Yang, Deren

2016-11-01

Defect-related electroluminescence (EL) from ZrO2 films annealed under different atmosphere has been realized by means of electrical pumping scheme of metal-oxide-semiconductor (MOS) devices. At the same injection current, the acquired EL from the MOS device with the vacuum-annealed ZrO2 film is much stronger than that from the counterpart with the oxygen-annealed ZrO2 film. This is because the vacuum-annealed ZrO2 film contains more oxygen vacancies and Zr3+ ions. Analysis on the current-voltage characteristic of the ZrO2-based MOS devices indicates the P-F conduction mechanism dominates the electron transportation at the EL-enabling voltages under forward bias. It is tentatively proposed that the recombination of the electrons trapped in multiple oxygen-vacancy-related states with the holes in the defect level pertaining to Zr3+ ions brings about the EL emissions.

Waves, particles, and interactions in reduced dimensions

NASA Astrophysics Data System (ADS)

Zhang, Yiming

This thesis presents a set of experiments that study the interplay between the wave-particle duality of electrons and the interaction effects in systems of reduced dimensions. Both dc transport and measurements of current noise have been employed in the studies; in particular, techniques for efficiently measuring current noise have been developed specifically for these experiments. The first four experiments study current noise auto- and cross correlations in various mesoscopic devices, including quantum point contacts, single and double quantum dots, and graphene devices. In quantum point contacts, shot noise at zero magnetic field exhibits an asymmetry related to the 0.7 structure in conductance. The asymmetry in noise evolves smoothly into the symmetric signature of spin-resolved electron transmission at high field. Comparison to a phenomenological model with density-dependent level splitting yields good quantitative agreement. Additionally, a device-specific contribution to the finite-bias noise, particularly visible on conductance plateaus where shot noise vanishes, agrees with a model of bias-dependent electron heating. In a three-lead single quantum dot and a capacitively coupled double quantum dot, sign reversal of noise cross correlations have been observed in the Coulomb blockade regime, and found to be tunable by gate voltages and source-drain bias. In the limit of weak output tunneling, cross correlations in the three-lead dot are found to be proportional to the two-lead noise in excess of the Poissonian value. These results can be reproduced with master equation calculations that include multi-level transport in the single dot, and inter-dot charging energy in the double dot. Shot noise measurements in single-layer graphene devices reveal a Fano factor independent of carrier type and density, device geometry, and the presence of a p-n junction. This result contrasts with theory for ballistic graphene sheets and junctions, suggesting that the transport is disorder dominated. The next two experiments study magnetoresistance oscillations in electronic Fabry-Perot interferometers in the integer quantum Hall regime. Two types of resistance oscillations, as a function of perpendicular magnetic field and gate voltages, in two interferometers of different sizes can be distinguished by three experimental signatures. The oscillations observed in the small (2.0 mum2) device are understood to arise from Coulomb blockade, and those observed in the big (18 mum2) device from Aharonov-Bohm interference. Nonlinear transport in the big device reveals a checkerboard-like pattern of conductance oscillations as a function of dc bias and magnetic field. Edge-state velocities extracted from the checkerboard data are compared to model calculations and found to be consistent with a crossover from skipping orbits at low fields to E⃗ x B⃗ drift at high fields. Suppression of visibility as a function of bias and magnetic field is accounted for by including energy- and field-dependent dephasing of edge electrons.

Quantum Well Infrared Photodetectors: Device Physics and Light Coupling

NASA Technical Reports Server (NTRS)

Bandara, S. V.; Gunapala, S. D.; Liu, J. K.; Mumolo, J.; Luong, E.; Hong, W.; Sengupta, D. K.

1997-01-01

It is customary to make infrared (IR) detectors in the long wavelength range by utilizing the interband transition which promotes an electron across the band gap (Eg) from the valence band to the conduction.

XPS studies of Mg doped GDC (Ce0.8Gd0.2O2-δ) for IT-SOFC

NASA Astrophysics Data System (ADS)

Tyagi, Deepak; Rao, P. Koteswara; Wani, B. N.

2018-04-01

Fuel Cells have gained much attention as efficient and environment friendly device for both stationary as well as mobile applications. For intermediate temperature SOFC (IT-SOFC), ceria based electrolytes are the most promising one, due to their higher ionic conductivity at relatively lower temperatures. Gd doped ceria is reported to be having the highest ionic conductivity. In the present work, Mg is codoped along with Gd and the electronic structure of the constituents is studied by XPS. XPS confirm that the Cerium is present in +4 oxidation state only which indicates that electronic conduction can be completely avoided.

Method of forming a dense, high temperature electronically conductive composite layer on a porous ceramic substrate

DOEpatents

Isenberg, Arnold O.

1992-01-01

An electrochemical device, containing a solid oxide electrolyte material and an electrically conductive composite layer, has the composite layer attached by: (A) applying a layer of LaCrO.sub.3, YCrO.sub.3 or LaMnO.sub.3 particles (32), on a portion of a porous ceramic substrate (30), (B) heating to sinter bond the particles to the substrate, (C) depositing a dense filler structure (34) between the doped particles (32), (D) shaving off the top of the particles, and (E) applying an electronically conductive layer over the particles (32) as a contact.

Cross-plane electrical and thermal transport in oxide metal/semiconductor superlattices

NASA Astrophysics Data System (ADS)

Jha, Pankaj

Perovskite oxides display a rich variety of electronic properties as metals, ferroelectrics, ferromagnetics, multiferroics, and thermoelectrics. Cross-plane electron filtering transport in metal/semiconductor superlattices provides a potential approach to increase the thermoelectric figure of merit (ZT). La0.67Sr0.33MnO3 (LSMO) and LaMnO3 (LMO) thin-film depositions were optimized using pulsed laser deposition (PLD) to achieve low resistivity constituent materials for LSMO/LMO superlattice heterostructures on (100)-strontium titanate (STO) substrates. X-ray diffraction and high-resolution reciprocal space mapping (RSM) indicate that the superlattices are epitaxial and pseudomorphic. Cross-plane devices were fabricated by etching cylindrical pillar structures in superlattices using inductively-coupled-plasma reactive-ion etching. The cross-plane electrical conductivity data for LSMO/LMO superlattices reveal an effective barrier height of 220 meV. The cross-plane LSMO/LMO superlattices showed a giant Seebeck coefficient of 2560 microV/K at 300K that increases to 16640 microV/K at 360K. The large Seebeck coefficient may arise due to hot electron and spin filtering as LSMO/LMO superlattice constituent materials exhibit spintronic properties where charges and spin current are intertwined and can generate a spin-Seebeck effect. The room temperature thermal conductivity achieved in low resistivity superlattices was 0.92 W/mK, which indicates that cross-plane phonon scattering at interfaces reduces the lattice contribution to the thermal conductivity. The giant contribution of spin-Seebeck, the large temperature dependence of the cross-plane power factor, and the low thermal conductivity in low resistance LSMO/LMO superlattices may offer opportunities to realize spin-magnetic thermoelectric devices, and suggests a direction for further investigations of the potential of LSMO/LMO oxide superlattices for thermoelectric devices.

Resonant tunnelling and negative differential conductance in graphene transistors

PubMed Central

Britnell, L.; Gorbachev, R. V.; Geim, A. K.; Ponomarenko, L. A.; Mishchenko, A.; Greenaway, M. T.; Fromhold, T. M.; Novoselov, K. S.; Eaves, L.

2013-01-01

The chemical stability of graphene and other free-standing two-dimensional crystals means that they can be stacked in different combinations to produce a new class of functional materials, designed for specific device applications. Here we report resonant tunnelling of Dirac fermions through a boron nitride barrier, a few atomic layers thick, sandwiched between two graphene electrodes. The resonance occurs when the electronic spectra of the two electrodes are aligned. The resulting negative differential conductance in the device characteristics persists up to room temperature and is gate voltage-tuneable due to graphene’s unique Dirac-like spectrum. Although conventional resonant tunnelling devices comprising a quantum well sandwiched between two tunnel barriers are tens of nanometres thick, the tunnelling carriers in our devices cross only a few atomic layers, offering the prospect of ultra-fast transit times. This feature, combined with the multi-valued form of the device characteristics, has potential for applications in high-frequency and logic devices. PMID:23653206

Photoconductive circuit element pulse generator

DOEpatents

Rauscher, Christen

1989-01-01

A pulse generator for characterizing semiconductor devices at millimeter wavelength frequencies where a photoconductive circuit element (PCE) is biased by a direct current voltage source and produces short electrical pulses when excited into conductance by short laser light pulses. The electrical pulses are electronically conditioned to improve the frequency related amplitude characteristics of the pulses which thereafter propagate along a transmission line to a device under test.

Effect of the mechanical deformation on the electrical properties of the polymer/CNT fiber

NASA Astrophysics Data System (ADS)

Cho, Hyun Woo; Sung, Bong June; Nano-Bio Computational Chemistry Laboratory Team

2014-03-01

We elucidate the effect of the mechanical deformation on the electrical properties of the polymer/CNT fiber. The conductive polymer fiber has drawn a great attention for its potential application to a stretchable electronics such as wearable devices and artificial muscles, etc. However, the electrical conductivity of the polymer-based stretchable electronics decreases significantly during the deformation, which may limit the applicability of the polymer/CNT fiber for the stretchable electronics. Moreover, its physical origin for the decrease in electrical conductivity has not been explained clearly. In this work, we employ a coarse-grained model for the polymer/CNT fiber, and we calculate the electric conductivity using global tunneling network (GTN) model. We show that the electric conductivity decreases during the elongation of the polymer/CNT fiber. We also find using critical path approximation (CPA) that the structure of the electrical network of the CNTs changes collectively during the elongation of the fiber, which is strongly responsible for the reduction of the electrical conductivity of the polymer/CNT fiber.

Polymer nanofiber-carbon nanotube network generating circuits

NASA Astrophysics Data System (ADS)

Mutlu, Mustafa Umut; Akın, Osman; Yildiz, Ümit Hakan

2018-02-01

The polymer nanofiber carbon nanotube (CNT) based devices attracts attention since they promise high performance for next generation devices such as wearable electronics, ultra-light weighted appliances and foldable devices. This abstract describes the utilization of polymer nanofibers and CNT as major component of low cost foldable photo-resistor. We use polymer nanofiber as template guiding CNTs to generate nanocircuits and conductive sensing network. The controlled combination of CNTs and polymer nanofibers provide opportunities for device miniaturization without loss of performance. The nanofiber-CNT network based photo-resistor exhibits broad band response 400 to 1600 nm that holding promises for ultra-thin devices and new sensing platforms.

H+-type and OH--type biological protonic semiconductors and complementary devices

NASA Astrophysics Data System (ADS)

Deng, Yingxin; Josberger, Erik; Jin, Jungho; Rousdari, Anita Fadavi; Helms, Brett A.; Zhong, Chao; Anantram, M. P.; Rolandi, Marco

2013-10-01

Proton conduction is essential in biological systems. Oxidative phosphorylation in mitochondria, proton pumping in bacteriorhodopsin, and uncoupling membrane potentials by the antibiotic Gramicidin are examples. In these systems, H+ hop along chains of hydrogen bonds between water molecules and hydrophilic residues - proton wires. These wires also support the transport of OH- as proton holes. Discriminating between H+ and OH- transport has been elusive. Here, H+ and OH- transport is achieved in polysaccharide- based proton wires and devices. A H+- OH- junction with rectifying behaviour and H+-type and OH--type complementary field effect transistors are demonstrated. We describe these devices with a model that relates H+ and OH- to electron and hole transport in semiconductors. In turn, the model developed for these devices may provide additional insights into proton conduction in biological systems.

H+-type and OH−-type biological protonic semiconductors and complementary devices

PubMed Central

Deng, Yingxin; Josberger, Erik; Jin, Jungho; Rousdari, Anita Fadavi; Helms, Brett A.; Zhong, Chao; Anantram, M. P.; Rolandi, Marco

2013-01-01

Proton conduction is essential in biological systems. Oxidative phosphorylation in mitochondria, proton pumping in bacteriorhodopsin, and uncoupling membrane potentials by the antibiotic Gramicidin are examples. In these systems, H+ hop along chains of hydrogen bonds between water molecules and hydrophilic residues – proton wires. These wires also support the transport of OH− as proton holes. Discriminating between H+ and OH− transport has been elusive. Here, H+ and OH− transport is achieved in polysaccharide- based proton wires and devices. A H+- OH− junction with rectifying behaviour and H+-type and OH−-type complementary field effect transistors are demonstrated. We describe these devices with a model that relates H+ and OH− to electron and hole transport in semiconductors. In turn, the model developed for these devices may provide additional insights into proton conduction in biological systems. PMID:24089083

Hydrogen production by high temperature water splitting using electron conducting membranes

DOEpatents

Balachandran, Uthamalingam; Wang, Shuangyan; Dorris, Stephen E.; Lee, Tae H.

2006-08-08

A device and method for separating water into hydrogen and oxygen is disclosed. A first substantially gas impervious solid electron-conducting membrane for selectively passing protons or hydrogen is provided and spaced from a second substantially gas impervious solid electron-conducting membrane for selectively passing oxygen. When steam is passed between the two membranes at dissociation temperatures the hydrogen from the dissociation of steam selectively and continuously passes through the first membrane and oxygen selectively and continuously passes through the second membrane, thereby continuously driving the dissociation of steam producing hydrogen and oxygen. The oxygen is thereafter reacted with methane to produce syngas which optimally may be reacted in a water gas shift reaction to produce CO₂ and H₂.

A Manufacturing Cost and Supply Chain Analysis of SiC Power Electronics Applicable to Medium-Voltage Motor Drives

DOE Office of Scientific and Technical Information (OSTI.GOV)

Horowitz, Kelsey; Remo, Timothy; Reese, Samantha

Wide bandgap (WBG) semiconductor devices are increasingly being considered for use in certain power electronics applications, where they can improve efficiency, performance, footprint, and, potentially, total system cost compared to systems using traditional silicon (Si) devices. Silicon carbide (SiC) devices in particular -- which are currently more mature than other WBG devices -- are poised for growth in the coming years. Today, the manufacturing of SiC wafers is concentrated in the United States, and chip production is split roughly equally between the United States, Japan, and Europe. Established contract manufacturers located throughout Asia typically carry out manufacturing of WBG powermore » modules. We seek to understand how global manufacturing of SiC components may evolve over time by illustrating the regional cost drivers along the supply chain and providing an overview of other factors that influence where manufacturing is sited. We conduct this analysis for a particular case study where SiC devices are used in a medium-voltage motor drive.« less

Oxide semiconductors for organic opto-electronic devices

NASA Astrophysics Data System (ADS)

Sigdel, Ajaya K.

In this dissertation, I have introduced various concepts on the modulations of various surface, interface and bulk opto-electronic properties of ZnO based semiconductor for charge transport, charge selectivity and optimal device performance. I have categorized transparent semiconductors into two sub groups depending upon their role in a device. Electrodes, usually 200 to 500 nm thick, optimized for good transparency and transporting the charges to the external circuit. Here, the electrical conductivity in parallel direction to thin film, i.e bulk conductivity is important. And contacts, usually 5 to 50 nm thick, are optimized in case of solar cells for providing charge selectivity and asymmetry to manipulate the built in field inside the device for charge separation and collection. Whereas in Organic LEDs (OLEDs), contacts provide optimum energy level alignment at organic oxide interface for improved charge injections. For an optimal solar cell performance, transparent electrodes are designed with maximum transparency in the region of interest to maximize the light to pass through to the absorber layer for photo-generation, plus they are designed for minimum sheet resistance for efficient charge collection and transport. As such there is need for material with high conductivity and transparency. Doping ZnO with some common elements such as B, Al, Ga, In, Ge, Si, and F result in n-type doping with increase in carriers resulting in high conductivity electrode, with better or comparable opto-electronic properties compared to current industry-standard indium tin oxide (ITO). Furthermore, improvement in mobility due to improvement on crystallographic structure also provide alternative path for high conductivity ZnO TCOs. Implementing these two aspects, various studies were done on gallium doped zinc oxide (GZO) transparent electrode, a very promising indium free electrode. The dynamics of the superimposed RF and DC power sputtering was utilized to improve the microstructure during the thin films growth, resulting in GZO electrode with conductivity greater than 4000 S/cm and transparency greater than ˜ 90%. Similarly, various studies on research and development of Indium Zinc Tin Oxide and Indium Zinc Oxide thin films which can be applied to flexible substrates for next generation solar cells application is presented. In these new TCO systems, understanding the role of crystallographic structure ranging from poly-crystalline to amorphous phase and the influence on the charge transport and optical transparency as well as important surface passivation and surface charge transport properties. Implementation of these electrode based on ZnO on opto-electronics devices such as OLED and OPV is complicated due to chemical interaction over time with the organic layer or with ambient. The problem of inefficient charge collection/injection due to poor understanding of interface and/or bulk property of oxide electrode exists at several oxide-organic interfaces. The surface conductivity, the work function, the formation of dipoles and the band-bending at the interfacial sites can positively or negatively impact the device performance. Detailed characterization of the surface composition both before and after various chemicals treatment of various oxide electrode can therefore provide insight into optimization of device performance. Some of the work related to controlling the interfacial chemistry associated with charge transport of transparent electrodes are discussed. Thus, the role of various pre-treatment on poly-crystalline GZO electrode and amorphous indium zinc oxide (IZO) electrode is compared and contrasted. From the study, we have found that removal of defects and self passivating defects caused by accumulation of hydroxides in the surface of both poly-crystalline GZO and amorphous IZO, are critical for improving the surface conductivity and charge transport. Further insight on how these insulating and self-passivating defects cause charge accumulation and recombination in an device is discussed. (Abstract shortened by UMI.)

Graphene Inks with Cellulosic Dispersants: Development and Applications for Printed Electronics

NASA Astrophysics Data System (ADS)

Secor, Ethan Benjamin

Graphene offers promising opportunities for applications in printed and flexible electronic devices due to its high electrical and thermal conductivity, mechanical flexibility and strength, and chemical and environmental stability. However, scalable production and processing of graphene presents a critical technological challenge preventing the application of graphene for flexible electronic interconnects, electrochemical energy storage, and chemically robust electrical contacts. In this thesis, a promising and versatile platform for the production, patterning, and application of graphene inks is presented based on cellulosic dispersants. Graphene is produced from flake graphite using scalable liquid-phase exfoliation methods, using the polymers ethyl cellulose and nitrocellulose as multifunctional dispersing agents. These cellulose derivatives offer high colloidal stability and broadly tunable rheology for graphene dispersions, providing an effective and tunable platform for graphene ink development. Thermal or photonic annealing decomposes the polymer dispersant to yield high conductivity, flexible graphene patterns for various electronics applications. In particular, the chemical stability of graphene enables robust electrical contacts for ceramic, metallic, organic and electrolytic materials, validating the diverse applicability of graphene in printed electronics. Overall, the strategy for graphene ink design presented here offers a simple, efficient, and versatile method for integrating graphene in a wide range of printed devices and systems, providing both fundamental insight for nanomaterial ink development and realistic opportunities for practical applications.

Energy Dissipation and Transport in Carbon Nanotube Devices

NASA Astrophysics Data System (ADS)

Pop, Eric

2011-03-01

Power consumption is a significant challenge in electronics, often limiting the performance of integrated circuits from mobile devices to massive data centers. Carbon nanotubes have emerged as potentially energy-efficient future devices and interconnects, with both large mobility and thermal conductivity. This talk will focus on understanding and controlling energy dissipation [1-3] and transport [4-6] in carbon nanotubes, with applications to low-energy devices, interconnects, heat sinks, and memory elements. Experiments have been used to gain new insight into the fundamental behavior of such devices, and to better inform practical device models. The results suggest much room for energy optimization in nanoelectronics through the design of geometry, interfaces, and materials..

Paper-Based Analytical Devices Relying on Visible-Light-Enhanced Glucose/Air Biofuel Cells.

PubMed

Wu, Kaiqing; Zhang, Yan; Wang, Yanhu; Ge, Shenguang; Yan, Mei; Yu, Jinghua; Song, Xianrang

2015-11-04

A strategy that combines visible-light-enhanced biofuel cells (BFCs) and electrochemical immunosensor into paper-based analytical devices was proposed for sensitive detection of the carbohydrate antigen 15-3 (CA15-3). The gold nanoparticle modified paper electrode with large surface area and good conductibility was applied as an effective matrix for primary antibodies. The glucose dehydrogenase (GDH) modified gold-silver bimetallic nanoparticles were used as bioanodic biocatalyst and signal magnification label. Poly(terthiophene) (pTTh), a photoresponsive conducting polymer, served as catalyst in cathode for the reduction of oxygen upon illumination by visible light. In the bioanode, electrons were generated through the oxidation of glucose catalyzed by GDH. The amount of electrons is determined by the amount of GDH, which finally depended on the amount of CA15-3. In the cathode, electrons from the bioanode could combine with the generated holes in the HOMO energy level of cathode catalysts pTTh. Meanwhile, the high energy level photoexcited electrons were generated in the LUMO energy level and involved in the oxygen reduction reaction, finally resulting in an increasing current and a decreasing overpotential. According to the current signal, simple and efficient detection of CA15-3 was achieved.

Conductive bridging random access memory—materials, devices and applications

NASA Astrophysics Data System (ADS)

Kozicki, Michael N.; Barnaby, Hugh J.

2016-11-01

We present a review and primer on the subject of conductive bridging random access memory (CBRAM), a metal ion-based resistive switching technology, in the context of current research and the near-term requirements of the electronics industry in ultra-low energy devices and new computing paradigms. We include extensive discussions of the materials involved, the underlying physics and electrochemistry, the critical roles of ion transport and electrode reactions in conducting filament formation and device switching, and the electrical characteristics of the devices. Two general cation material systems are given—a fast ion chacogenide electrolyte and a lower ion mobility oxide ion conductor, and numerical examples are offered to enhance understanding of the operation of devices based on these. The effect of device conditioning on the activation energy for ion transport and consequent switching speed is discussed, as well as the mechanisms involved in the removal of the conducting bridge. The morphology of the filament and how this could be influenced by the solid electrolyte structure is described, and the electrical characteristics of filaments with atomic-scale constrictions are discussed. Consideration is also given to the thermal and mechanical environments within the devices. Finite element and compact modelling illustrations are given and aspects of CBRAM storage elements in memory circuits and arrays are included. Considerable emphasis is placed on the effects of ionizing radiation on CBRAM since this is important in various high reliability applications, and the potential uses of the devices in reconfigurable logic and neuromorphic systems is also discussed.

Challenges and opportunities of ZnO-related single crystalline heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kozuka, Y.; Tsukazaki, A.; PRESTO, Japan Science and Technology Agency

2014-03-15

Recent technological advancement in ZnO heterostructures has expanded the possibility of device functionalities to various kinds of applications. In order to extract novel device functionalities in the heterostructures, one needs to fabricate high quality films and interfaces with minimal impurities, defects, and disorder. With employing molecular-beam epitaxy and single crystal ZnO substrates, the density of residual impurities and defects can be drastically reduced and the optical and electrical properties have been dramatically improved for the ZnO films and heterostructures with Mg{sub x}Zn{sub 1-x}O. Here, we overview such recent technological advancement from various aspects of application. Towards optoelectronic devices such asmore » a light emitter and a photodetector in an ultraviolet region, the development of p-type ZnO and the fabrication of excellent Schottky contact, respectively, have been subjected to intensive studies for years. For the former, the fine tuning of the growth conditions to make Mg{sub x}Zn{sub 1-x}O as intrinsic as possible has opened the possibilities of making p-type Mg{sub x}Zn{sub 1-x}O through NH{sub 3} doping method. For the latter, conducting and transparent polymer films spin-coated on Mg{sub x}Zn{sub 1-x}O was shown to give almost ideal Schottky junctions. The wavelength-selective detection can be realized with varying the Mg content. From the viewpoint of electronic devices, two-dimensional electrons confined at the Mg{sub x}Zn{sub 1-x}O/ZnO interfaces are promising candidate for quantum devices because of high electron mobility and strong electron-electron correlation effect. These wonderful features and tremendous opportunities in ZnO-based heterostructures make this system unique and promising in oxide electronics and will lead to new quantum functionalities in optoelectronic devices and electronic applications with lower energy consumption and high performance.« less

Synaptic organic transistors with a vacuum-deposited charge-trapping nanosheet

PubMed Central

Kim, Chang-Hyun; Sung, Sujin; Yoon, Myung-Han

2016-01-01

Organic neuromorphic devices hold great promise for unconventional signal processing and efficient human-machine interfaces. Herein, we propose novel synaptic organic transistors devised to overcome the traditional trade-off between channel conductance and memory performance. A vacuum-processed, nanoscale metallic interlayer provides an ultra-flat surface for a high-mobility molecular film as well as a desirable degree of charge trapping, allowing for low-temperature fabrication of uniform device arrays on plastic. The device architecture is implemented by widely available electronic materials in combination with conventional deposition methods. Therefore, our results are expected to generate broader interests in incorporation of organic electronics into large-area neuromorphic systems, with potential in gate-addressable complex logic circuits and transparent multifunctional interfaces receiving direct optical and cellular stimulation. PMID:27645425

Influence of Hybrid Perovskite Fabrication Methods on Film Formation, Electronic Structure, and Solar Cell Performance

PubMed Central

Schnier, Tobias; Emara, Jennifer; Olthof, Selina; Meerholz, Klaus

2017-01-01

Hybrid organic/inorganic halide perovskites have lately been a topic of great interest in the field of solar cell applications, with the potential to achieve device efficiencies exceeding other thin film device technologies. Yet, large variations in device efficiency and basic physical properties are reported. This is due to unintentional variations during film processing, which have not been sufficiently investigated so far. We therefore conducted an extensive study of the morphology and electronic structure of a large number of CH3NH3PbI3 perovskite where we show how the preparation method as well as the mixing ratio of educts methylammonium iodide and lead(II) iodide impact properties like film formation, crystal structure, density of states, energy levels, and ultimately the solar cell performance. PMID:28287555

Three-dimensional ionic conduction in the strained electrolytes of solid oxide fuel cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Han, Yupei; Zou, Minda; Lv, Weiqiang

2016-05-07

Flexible power sources including fuel cells and batteries are the key to realizing flexible electronic devices with pronounced foldability. To understand the bending effects in these devices, theoretical analysis on three-dimensional (3-D) lattice bending is necessary. In this report, we derive a 3-D analytical model to analyze the effects of electrolyte crystal bending on ionic conductivity in flexible solid-state batteries/fuel cells. By employing solid oxide fuel cells as a materials' platform, the intrinsic parameters of bent electrolyte materials, including lattice constant, Young's modulus, and Poisson ratio, are evaluated. Our work facilitates the rational design of highly efficient flexible electrolytes formore » high-performance flexible device applications.« less

An optically transparent, flexible, patterned and conductive silk biopolymer film (Conference Presentation)

NASA Astrophysics Data System (ADS)

Umar, Muhammad; Min, Kyungtaek; Kim, Sunghwan

2017-02-01

Transparent, flexible, and conducting films are of great interest for wearable electronics. For better biotic/abiotic interface, the films to integrate the electronics components requires the patterned surface conductors with optical transparency, smoothness, good electrical conductivity, along with the biofriendly traits of films. We focus on silk fibroin, a natural biopolymer extracted from the Bombyx mori cocoons, for this bioelectronics applications. Here we report an optically transparent, flexible, and patterned surface conductor on a silk film by burying a silver nanowires (AgNW) network below the surface of the silk film. The conducting silk film reveals high optical transparency of 80% and the excellent electronic conductivity of 15 Ω/sq, along with smooth surface. The integration of light emitting diode (LED) chip on the patterned electrodes confirms that the current can flow through the transparent and patterned electrodes on the silk film, and this result shows an application for integration of functional electronic/opto-electronic devices. Additionally, we fabricate a transparent and flexible radio frequency (RF) antenna and resistor on a silk film and apply these as a food sensor by monitoring the increasing resistance by the flow of gases from the spoiled food.

Quasi-Solid-State Single-Atom Transistors.

PubMed

Xie, Fangqing; Peukert, Andreas; Bender, Thorsten; Obermair, Christian; Wertz, Florian; Schmieder, Philipp; Schimmel, Thomas

2018-06-21

The single-atom transistor represents a quantum electronic device at room temperature, allowing the switching of an electric current by the controlled and reversible relocation of one single atom within a metallic quantum point contact. So far, the device operates by applying a small voltage to a control electrode or "gate" within the aqueous electrolyte. Here, the operation of the atomic device in the quasi-solid state is demonstrated. Gelation of pyrogenic silica transforms the electrolyte into the quasi-solid state, exhibiting the cohesive properties of a solid and the diffusive properties of a liquid, preventing the leakage problem and avoiding the handling of a liquid system. The electrolyte is characterized by cyclic voltammetry, conductivity measurements, and rotation viscometry. Thus, a first demonstration of the single-atom transistor operating in the quasi-solid-state is given. The silver single-atom and atomic-scale transistors in the quasi-solid-state allow bistable switching between zero and quantized conductance levels, which are integer multiples of the conductance quantum G 0  = 2e 2 /h. Source-drain currents ranging from 1 to 8 µA are applied in these experiments. Any obvious influence of the gelation of the aqueous electrolyte on the electron transport within the quantum point contact is not observed. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electrical conductivity measurements of bacterial nanowires from Pseudomonas aeruginosa

NASA Astrophysics Data System (ADS)

Maruthupandy, Muthusamy; Anand, Muthusamy; Maduraiveeran, Govindhan; Sait Hameedha Beevi, Akbar; Jeeva Priya, Radhakrishnan

2015-12-01

The extracellular appendages of bacteria (flagella) that transfer electrons to electrodes are called bacterial nanowires. This study focuses on the isolation and separation of nanowires that are attached via Pseudomonas aeruginosa bacterial culture. The size and roughness of separated nanowires were measured using transmission electron microscopy (TEM) and atomic force microscopy (AFM), respectively. The obtained bacterial nanowires indicated a clear image of bacterial nanowires measuring 16 nm in diameter. The formation of bacterial nanowires was confirmed by microscopic studies (AFM and TEM) and the conductivity nature of bacterial nanowire was investigated by electrochemical techniques. Cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS), which are nondestructive voltammetry techniques, suggest that bacterial nanowires could be the source of electrons—which may be used in various applications, for example, microbial fuel cells, biosensors, organic solar cells, and bioelectronic devices. Routine analysis of electron transfer between bacterial nanowires and the electrode was performed, providing insight into the extracellular electron transfer (EET) to the electrode. CV revealed the catalytic electron transferability of bacterial nanowires and electrodes and showed excellent redox activities. CV and EIS studies showed that bacterial nanowires can charge the surface by producing and storing sufficient electrons, behave as a capacitor, and have features consistent with EET. Finally, electrochemical studies confirmed the development of bacterial nanowires with EET. This study suggests that bacterial nanowires can be used to fabricate biomolecular sensors and nanoelectronic devices.

A compact model for selectors based on metal doped electrolyte

NASA Astrophysics Data System (ADS)

Zhang, Lu; Song, Wenhao; Yang, J. Joshua; Li, Hai; Chen, Yiran

2018-04-01

A selector device that demonstrates high nonlinearity and low switching voltages was fabricated using HfOx as a solid electrolyte doped with Ag electrodes. The electronic conductance of the volatile conductive filaments responsible for the switching was studied under both static and dynamic conditions. A compact model is developed from this study that describes the physical processes of the formation and rupture of the Ag filament(s). A dynamic capacitance model is used to fit the transient current traces under different voltage bias, which enables the extraction of parameters associated with the various parasitic components in the device.

Probing the low thermal conductivity of single-crystalline porous Si nanowires

NASA Astrophysics Data System (ADS)

Zhao, Yunshan; Lina Yang Collaboration; Lingyu Kong Collaboration; Baowen Li Collaboration; John T L Thong Collaboration; Kedar Hippalgaonkar Collaboration

Pore-like structures provide a novel way to reduce the thermal conductivity of silicon nanowires, compared to both smooth-surface VLS nanowires and rough EE nanowires. Because of enhanced phonon scattering with interface and decrease in phonon transport path, the porous nanostructures show reduction in thermal conductance by few orders of magnitude. It proves to be extremely challenging to evaluate porosity accurately in an experimental manner and further understand its effect on thermal transport. In this study, we use the newly developed electron-beam based micro-electrothermal device technique to study the porosity dependent thermal conductivity of mesoporous silicon nanowires that have single-crystalline scaffolding. Based on the Casino simulation, the power absorbed by the nanowire, coming from the loss of travelling electron energy, has a linear relationship with it cross section. The relationship has been verified experimentally as well. Monte Carlo simulation is carried out to theoretically predict the thermal conductivity of silicon nanowires with a specific value of porosity. These single-crystalline porous silicon nanowires show extremely low thermal conductivity, even below the amorphous limit. These structures together with our experimental techniques provide a particularly intriguing platform to understand the phonon transport in nanoscale and aid the performance improvement in future nanowires-based devices.

Photoelectrochemically driven self-assembly method

DOEpatents

Nielson, Gregory N.; Okandan, Murat

2017-01-17

Various technologies described herein pertain to assembling electronic devices into a microsystem. The electronic devices are disposed in a solution. Light can be applied to the electronic devices in the solution. The electronic devices can generate currents responsive to the light applied to the electronic devices in the solution, and the currents can cause electrochemical reactions that functionalize regions on surfaces of the electronic devices. Additionally or alternatively, the light applied to the electronic devices in the solution can cause the electronic devices to generate electric fields, which can orient the electronic devices and/or induce movement of the electronic devices with respect to a receiving substrate. Further, electrodes on a receiving substrate can be biased to attract and form connections with the electronic devices having the functionalized regions on the surfaces. The microsystem can include the receiving substrate and the electronic devices connected to the receiving substrate.

Photoconductive circuit element reflectometer

DOEpatents

Rauscher, Christen

1990-01-01

A photoconductive reflectometer for characterizing semiconductor devices at millimeter wavelength frequencies where a first photoconductive circuit element (PCE) is biased by a direct current voltage source and produces short electrical pulses when excited into conductance by short first laser light pulses. The electrical pulses are electronically conditioned to improve the frequency related amplitude characteristics of the pulses which thereafter propagate along a transmission line to a device under test. Second PCEs are connected along the transmission line to sample the signals on the transmission line when excited into conductance by short second laser light pulses, spaced apart in time a variable period from the first laser light pulses. Electronic filters connected to each of the second PCEs act as low-pass filters and remove parasitic interference from the sampled signals and output the sampled signals in the form of slowed-motion images of the signals on the transmission line.

Photoconductive circuit element reflectometer

DOEpatents

Rauscher, C.

1987-12-07

A photoconductive reflectometer for characterizing semiconductor devices at millimeter wavelength frequencies where a first photoconductive circuit element (PCE) is biased by a direct current voltage source and produces short electrical pulses when excited into conductance by short first laser light pulses. The electrical pulses are electronically conditioned to improve the frequency related amplitude characteristics of the pulses which thereafter propagate along a transmission line to a device under test. Second PCEs are connected along the transmission line to sample the signals on the transmission line when excited into conductance by short second laser light pulses, spaced apart in time a determinable period from the first laser light pulses. Electronic filters connected to each of the second PCEs act as low-pass filters and remove parasitic interference from the sampled signals and output the sampled signals in the form of slowed-motion images of the signals on the transmission line. 4 figs.

Method of Manufacturing a Light Emitting, Photovoltaic or Other Electronic Apparatus and System

NASA Technical Reports Server (NTRS)

Blanchard, Richard A. (Inventor); Lewandowski, Mark Allan (Inventor); Frazier, Donald Odell (Inventor); Ray, William Johnstone (Inventor); Fuller, Kirk A. (Inventor); Lowenthal, Mark David (Inventor); Shotton, Neil O. (Inventor)

2014-01-01

The present invention provides a method of manufacturing an electronic apparatus, such as a lighting device having light emitting diodes (LEDs) or a power generating device having photovoltaic diodes. The exemplary method includes depositing a first conductive medium within a plurality of channels of a base to form a plurality of first conductors; depositing within the plurality of channels a plurality of semiconductor substrate particles suspended in a carrier medium; forming an ohmic contact between each semiconductor substrate particle and a first conductor; converting the semiconductor substrate particles into a plurality of semiconductor diodes; depositing a second conductive medium to form a plurality of second conductors coupled to the plurality of semiconductor diodes; and depositing or attaching a plurality of lenses suspended in a first polymer over the plurality of diodes. In various embodiments, the depositing, forming, coupling and converting steps are performed by or through a printing process.

Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system

NASA Technical Reports Server (NTRS)

Fuller, Kirk A. (Inventor); Frazier, Donald Odell (Inventor); Blanchard, Richard A. (Inventor); Lowenthal, Mark D. (Inventor); Lewandowski, Mark Allan (Inventor); Ray, William Johnstone (Inventor); Shotton, Neil O. (Inventor)

2012-01-01

The present invention provides a method of manufacturing an electronic apparatus, such as a lighting device having light emitting diodes (LEDs) or a power generating device having photovoltaic diodes. The exemplary method includes depositing a first conductive medium within a plurality of channels of a base to form a plurality of first conductors; depositing within the plurality of channels a plurality of semiconductor substrate particles suspended in a carrier medium; forming an ohmic contact between each semiconductor substrate particle and a first conductor; converting the semiconductor substrate particles into a plurality of semiconductor diodes; depositing a second conductive medium to form a plurality of second conductors coupled to the plurality of semiconductor diodes; and depositing or attaching a plurality of lenses suspended in a first polymer over the plurality of diodes. In various embodiments, the depositing, forming, coupling and converting steps are performed by or through a printing process.

Field enhanced charge carrier reconfiguration in electronic and ionic coupled dynamic polymer resistive memory.

PubMed

Zhao, Jun Hui; Thomson, Douglas J; Pilapil, Matt; Pillai, Rajesh G; Rahman, G M Aminur; Freund, Michael S

2010-04-02

Dynamic resistive memory devices based on a conjugated polymer composite (PPy(0)DBS(-)Li(+) (PPy: polypyrrole; DBS(-): dodecylbenzenesulfonate)), with field-driven ion migration, have been demonstrated. In this work the dynamics of these systems has been investigated and it has been concluded that increasing the applied field can dramatically increase the rate at which information can be 'written' into these devices. A conductance model using space charge limited current coupled with an electric field induced ion reconfiguration has been successfully utilized to interpret the experimentally observed transient conducting behaviors. The memory devices use the rising and falling transient current states for the storage of digital states. The magnitude of these transient currents is controlled by the magnitude and width of the write/read pulse. For the 500 nm length devices used in this work an increase in 'write' potential from 2.5 to 5.5 V decreased the time required to create a transient conductance state that can be converted into the digital signal by 50 times. This work suggests that the scaling of these devices will be favorable and that 'write' times for the conjugated polymer composite memory devices will decrease rapidly as ion driving fields increase with decreasing device size.

Coherent Charge Transport in Ballistic InSb Nanowire Josephson Junctions

PubMed Central

Li, S.; Kang, N.; Fan, D. X.; Wang, L. B.; Huang, Y. Q.; Caroff, P.; Xu, H. Q.

2016-01-01

Hybrid InSb nanowire-superconductor devices are promising for investigating Majorana modes and topological quantum computation in solid-state devices. An experimental realisation of ballistic, phase-coherent superconductor-nanowire hybrid devices is a necessary step towards engineering topological superconducting electronics. Here, we report on a low-temperature transport study of Josephson junction devices fabricated from InSb nanowires grown by molecular-beam epitaxy and provide a clear evidence for phase-coherent, ballistic charge transport through the nanowires in the junctions. We demonstrate that our devices show gate-tunable proximity-induced supercurrent and clear signatures of multiple Andreev reflections in the differential conductance, indicating phase-coherent transport within the junctions. We also observe periodic modulations of the critical current that can be associated with the Fabry-Pérot interference in the nanowires in the ballistic transport regime. Our work shows that the InSb nanowires grown by molecular-beam epitaxy are of excellent material quality and hybrid superconducting devices made from these nanowires are highly desirable for investigation of the novel physics in topological states of matter and for applications in topological quantum electronics. PMID:27102689

Improving performance of armchair graphene nanoribbon field effect transistors via boron nitride doping

NASA Astrophysics Data System (ADS)

Goharrizi, A. Yazdanpanah; Sanaeepur, M.; Sharifi, M. J.

2015-09-01

Device performance of 10 nm length armchair graphene nanoribbon field effect transistors with 1.5 nm and 4 nm width (13 and 33 atoms in width respectively) are compared in terms of Ion /Ioff , trans-conductance, and sub-threshold swing. While narrow devices suffer from edge roughness wider devices are subject to more substrate surface roughness and reduced bandgap. Boron Nitride doping is employed to compensate reduced bandgap in wider devices. Simultaneous effects of edge and substrate surface roughness are considered. Results show that in the presence of both the edge and substrate surface roughness the 4 nm wide device with boron nitride doping shows improved performance with respect to the 1.5 nm one (both of which incorporate the same bandgap AGNR as channel material). Electronic simulations are performed via NEGF method along with tight-binding Hamiltonian. Edge and surface roughness are created by means of one and two dimensional auto correlation functions respectively. Electronic characteristics are averaged over a large number of devices due to statistic nature of both the edge and surface roughness.

Towards nanometer-spaced silicon contacts to proteins

NASA Astrophysics Data System (ADS)

Schukfeh, Muhammed I.; Sepunaru, Lior; Behr, Pascal; Li, Wenjie; Pecht, Israel; Sheves, Mordechai; Cahen, David; Tornow, Marc

2016-03-01

A vertical nanogap device (VND) structure comprising all-silicon contacts as electrodes for the investigation of electronic transport processes in bioelectronic systems is reported. Devices were fabricated from silicon-on-insulator substrates whose buried oxide (SiO2) layer of a few nanometers in thickness is embedded within two highly doped single crystalline silicon layers. Individual VNDs were fabricated by standard photolithography and a combination of anisotropic and selective wet etching techniques, resulting in p+ silicon contacts, vertically separated by 4 or 8 nm, depending on the chosen buried oxide thickness. The buried oxide was selectively recess-etched with buffered hydrofluoric acid, exposing a nanogap. For verification of the devices’ electrical functionality, gold nanoparticles were successfully trapped onto the nanogap electrodes’ edges using AC dielectrophoresis. Subsequently, the suitability of the VND structures for transport measurements on proteins was investigated by functionalizing the devices with cytochrome c protein from solution, thereby providing non-destructive, permanent semiconducting contacts to the proteins. Current-voltage measurements performed after protein deposition exhibited an increase in the junctions’ conductance of up to several orders of magnitude relative to that measured prior to cytochrome c immobilization. This increase in conductance was lost upon heating the functionalized device to above the protein’s denaturation temperature (80 °C). Thus, the VND junctions allow conductance measurements which reflect the averaged electronic transport through a large number of protein molecules, contacted in parallel with permanent contacts and, for the first time, in a symmetrical Si-protein-Si configuration.

Development of an auditory situation awareness test battery for advanced hearing protectors and TCAPS: detection subtest of DRILCOM (detection-recognition/identification-localization-communication).

PubMed

Lee, Kichol; Casali, John G

2017-01-01

To design a test battery and conduct a proof-of-concept experiment of a test method that can be used to measure the detection performance afforded by military advanced hearing protection devices (HPDs) and tactical communication and protective systems (TCAPS). The detection test was conducted with each of the four loudspeakers located at front, right, rear and left of the participant. Participants wore 2 in-ear-type TCAPS, 1 earmuff-type TCAPS, a passive Combat Arms Earplug in its "open" or pass-through setting and an EB-15LE™ electronic earplug. Devices with electronic gain systems were tested under two gain settings: "unity" and "max". Testing without any device (open ear) was conducted as a control. Ten participants with audiometric requirements of 25 dBHL or better at 500, 1000, 2000, 4000, 8000 Hz in both ears. Detection task performance varied with different signals and speaker locations. The test identified performance differences among certain TCAPS and protectors, and the open ear. A computer-controlled detection subtest of the Detection-Recognition/Identification-Localisation-Communication (DRILCOM) test battery was designed and implemented. Tested in a proof-of-concept experiment, it showed statistically-significant sensitivity to device differences in detection effects with the small sample of participants (10). This result has important implications for selection and deployment of TCAPS and HPDs on soldiers and workers in dynamic situations.

Annealing shallow traps in electron beam irradiated high mobility metal-oxide-silicon transistors

NASA Astrophysics Data System (ADS)

Kim, Jin-Sung; Tyryshkin, Alexei; Lyon, Stephen

In metal-oxide-silicon (MOS) quantum devices, electron beam lithography (EBL) is known to create defects at the Si/SiO2 interface which can be catastrophic for single electron control. Shallow traps ( meV), which only manifest themselves at low temperature ( 4 K), are especially detrimental to quantum devices but little is known about annealing them. In this work, we use electron spin resonance (ESR) to measure the density of shallow traps in two sets of high mobility (μ) MOS transistors. One set (μ=14,000 cm2/Vs) was irradiated with an EBL dose (10 kV, 40 μC/cm2) and was subsequently annealed in forming gas while the other remained unexposed (μ=23,000 cm2/Vs). Our ESR data show that the forming gas anneal is sufficient to remove shallow traps generated by the EBL dose over the measured shallow trap energy range (0.3-4 meV). We additionally fit these devices' conductivity data to a percolation transition model and extract a zero temperature percolation threshold density, n0 ( 9 ×1010 cm-2 for both devices). We find that the extracted n0 agrees within 15 % with our lowest temperature (360 mK) ESR measurements, demonstrating agreement between two independent methods of evaluating the interface.

Physical Realization of a Supervised Learning System Built with Organic Memristive Synapses

NASA Astrophysics Data System (ADS)

Lin, Yu-Pu; Bennett, Christopher H.; Cabaret, Théo; Vodenicarevic, Damir; Chabi, Djaafar; Querlioz, Damien; Jousselme, Bruno; Derycke, Vincent; Klein, Jacques-Olivier

2016-09-01

Multiple modern applications of electronics call for inexpensive chips that can perform complex operations on natural data with limited energy. A vision for accomplishing this is implementing hardware neural networks, which fuse computation and memory, with low cost organic electronics. A challenge, however, is the implementation of synapses (analog memories) composed of such materials. In this work, we introduce robust, fastly programmable, nonvolatile organic memristive nanodevices based on electrografted redox complexes that implement synapses thanks to a wide range of accessible intermediate conductivity states. We demonstrate experimentally an elementary neural network, capable of learning functions, which combines four pairs of organic memristors as synapses and conventional electronics as neurons. Our architecture is highly resilient to issues caused by imperfect devices. It tolerates inter-device variability and an adaptable learning rule offers immunity against asymmetries in device switching. Highly compliant with conventional fabrication processes, the system can be extended to larger computing systems capable of complex cognitive tasks, as demonstrated in complementary simulations.

Oxide Heteroepitaxy for Flexible Optoelectronics.

PubMed

Bitla, Yugandhar; Chen, Ching; Lee, Hsien-Chang; Do, Thi Hien; Ma, Chun-Hao; Qui, Le Van; Huang, Chun-Wei; Wu, Wen-Wei; Chang, Li; Chiu, Po-Wen; Chu, Ying-Hao

2016-11-30

The emerging technological demands for flexible and transparent electronic devices have compelled researchers to look beyond the current silicon-based electronics. However, fabrication of devices on conventional flexible substrates with superior performance are constrained by the trade-off between processing temperature and device performance. Here, we propose an alternative strategy to circumvent this issue via the heteroepitaxial growth of transparent conducting oxides (TCO) on the flexible mica substrate with performance comparable to that of their rigid counterparts. With the examples of ITO and AZO as a case study, a strong emphasis is laid upon the growth of flexible yet epitaxial TCO relying muscovite's superior properties compared to those of conventional flexible substrates and its compatibility with the present fabrication methods. Besides excellent optoelectro-mechanical properties, an additional functionality of high-temperature stability, normally lacking in the current state-of-the-art transparent flexitronics, is provided by these heterostructures. These epitaxial TCO electrodes with good chemical and thermal stabilities as well as mechanical durability can significantly contribute to the field of flexible, light-weight, and portable smart electronics.

Robust, functional nanocrystal solids by infilling with atomic layer deposition.

PubMed

Liu, Yao; Gibbs, Markelle; Perkins, Craig L; Tolentino, Jason; Zarghami, Mohammad H; Bustamante, Jorge; Law, Matt

2011-12-14

Thin films of colloidal semiconductor nanocrystals (NCs) are inherently metatstable materials prone to oxidative and photothermal degradation driven by their large surface-to-volume ratios and high surface energies. (1) The fabrication of practical electronic devices based on NC solids hinges on preventing oxidation, surface diffusion, ripening, sintering, and other unwanted physicochemical changes that can plague these materials. Here we use low-temperature atomic layer deposition (ALD) to infill conductive PbSe NC solids with metal oxides to produce inorganic nanocomposites in which the NCs are locked in place and protected against oxidative and photothermal damage. Infilling NC field-effect transistors and solar cells with amorphous alumina yields devices that operate with enhanced and stable performance for at least months in air. Furthermore, ALD infilling with ZnO lowers the height of the inter-NC tunnel barrier for electron transport, yielding PbSe NC films with electron mobilities of 1 cm2 V(-1) s(-1). Our ALD technique is a versatile means to fabricate robust NC solids for optoelectronic devices.

Development of UItra-Low Temperature Motor Controllers: Ultra Low Temperatures Evaluation and Characterization of Semiconductor Technologies For The Next Generation Space Telescope

NASA Technical Reports Server (NTRS)

Elbuluk, Malik E.

2003-01-01

Electronics designed for low temperature operation will result in more efficient systems than room temperature. This improvement is a result of better electronic, electrical, and thermal properties of materials at low temperatures. In particular, the performance of certain semiconductor devices improves with decreasing temperature down to ultra-low temperature (-273 'C). The Low Temperature Electronics Program at the NASA Glenn Research Center focuses on research and development of electrical components and systems suitable for applications in deep space missions. Research is being conducted on devices and systems for use down to liquid helium temperatures (-273 'C). Some of the components that are being characterized include semiconductor switching devices, resistors, magnetics, and capacitors. The work performed this summer has focused on the evaluation of silicon-, silicon-germanium- and gallium-Arsenide-based (GaAs) bipolar, MOS and CMOS discrete components and integrated circuits (ICs), from room temperature (23 'C) down to ultra low temperatures (-263 'C).

Physical Realization of a Supervised Learning System Built with Organic Memristive Synapses.

PubMed

Lin, Yu-Pu; Bennett, Christopher H; Cabaret, Théo; Vodenicarevic, Damir; Chabi, Djaafar; Querlioz, Damien; Jousselme, Bruno; Derycke, Vincent; Klein, Jacques-Olivier

2016-09-07

Multiple modern applications of electronics call for inexpensive chips that can perform complex operations on natural data with limited energy. A vision for accomplishing this is implementing hardware neural networks, which fuse computation and memory, with low cost organic electronics. A challenge, however, is the implementation of synapses (analog memories) composed of such materials. In this work, we introduce robust, fastly programmable, nonvolatile organic memristive nanodevices based on electrografted redox complexes that implement synapses thanks to a wide range of accessible intermediate conductivity states. We demonstrate experimentally an elementary neural network, capable of learning functions, which combines four pairs of organic memristors as synapses and conventional electronics as neurons. Our architecture is highly resilient to issues caused by imperfect devices. It tolerates inter-device variability and an adaptable learning rule offers immunity against asymmetries in device switching. Highly compliant with conventional fabrication processes, the system can be extended to larger computing systems capable of complex cognitive tasks, as demonstrated in complementary simulations.

Thermal management in MoS{sub 2} based integrated device using near-field radiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Peng, Jiebin; Zhang, Gang, E-mail: zhangg@ihpc.a-star.edu.sg; Li, Baowen

2015-09-28

Recently, wafer-scale growth of monolayer MoS{sub 2} films with spatial homogeneity is realized on SiO{sub 2} substrate. Together with the latest reported high mobility, MoS{sub 2} based integrated electronic devices are expected to be fabricated in the near future. Owing to the low lattice thermal conductivity in monolayer MoS{sub 2}, and the increased transistor density accompanied with the increased power density, heat dissipation will become a crucial issue for these integrated devices. In this letter, using the formalism of fluctuation electrodynamics, we explored the near-field radiative heat transfer from a monolayer MoS{sub 2} to graphene. We demonstrate that in resonance,more » the maximum heat transfer via near-field radiation between MoS{sub 2} and graphene can be ten times higher than the in-plane lattice thermal conduction for MoS{sub 2} sheet. Therefore, an efficient thermal management strategy for MoS{sub 2} integrated device is proposed: Graphene sheet is brought into close proximity, 10–20 nm from MoS{sub 2} device; heat energy transfer from MoS{sub 2} to graphene via near-field radiation; this amount of heat energy then be conducted to contact due to ultra-high lattice thermal conductivity of graphene. Our work sheds light for developing cooling strategy for nano devices constructing with low thermal conductivity materials.« less

Silicon Carbide Solar Cells Investigated

NASA Technical Reports Server (NTRS)

Bailey, Sheila G.; Raffaelle, Ryne P.

2001-01-01

The semiconductor silicon carbide (SiC) has long been known for its outstanding resistance to harsh environments (e.g., thermal stability, radiation resistance, and dielectric strength). However, the ability to produce device-quality material is severely limited by the inherent crystalline defects associated with this material and their associated electronic effects. Much progress has been made recently in the understanding and control of these defects and in the improved processing of this material. Because of this work, it may be possible to produce SiC-based solar cells for environments with high temperatures, light intensities, and radiation, such as those experienced by solar probes. Electronics and sensors based on SiC can operate in hostile environments where conventional silicon-based electronics (limited to 350 C) cannot function. Development of this material will enable large performance enhancements and size reductions for a wide variety of systems--such as high-frequency devices, high-power devices, microwave switching devices, and high-temperature electronics. These applications would supply more energy-efficient public electric power distribution and electric vehicles, more powerful microwave electronics for radar and communications, and better sensors and controls for cleaner-burning, more fuel-efficient jet aircraft and automobile engines. The 6H-SiC polytype is a promising wide-bandgap (Eg = 3.0 eV) semiconductor for photovoltaic applications in harsh solar environments that involve high-temperature and high-radiation conditions. The advantages of this material for this application lie in its extremely large breakdown field strength, high thermal conductivity, good electron saturation drift velocity, and stable electrical performance at temperatures as high as 600 C. This behavior makes it an attractive photovoltaic solar cell material for devices that can operate within three solar radii of the Sun.

Electrical detection of nuclear spins in organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Malissa, H.; Kavand, M.; Waters, D. P.; Lupton, J. M.; Vardeny, Z. V.; Saam, B.; Boehme, C.

2014-03-01

We present pulsed combined electrically detected electron paramagnetic and nuclear magnetic resonance experiments on MEH-PPV OLEDs. Spin dynamics in these structures are governed by hyperfine interactions between charge carriers and the surrounding hydrogen nuclei, which are abundant in these materials. Hyperfine coupling has been observed by monitoring the device current during coherent spin excitation. Electron spin echoes (ESEs) are detected by applying one additional readout pulse at the time of echo formation. This allows for the application of high-resolution spectroscopy based on ESE detection, such as electron spin echo envelope modulation (ESEEM) and electron nuclear double resonance (ENDOR) available for electrical detection schemes. We conduct electrically detected ESEEM and ENDOR experiments and show how hyperfine interactions in MEH-PPV with and without deuterated polymer side groups can be observed by device current measurements. We acknowledge support by the Department of Energy, Office of Basic Energy Sciences under Award #DE-SC0000909.

Accurate calibration for the quantification of the Al content in AlGaN epitaxial layers by energy-dispersive X-ray spectroscopy in a Transmission Electron Microscope

NASA Astrophysics Data System (ADS)

Amari, H.; Lari, L.; Zhang, H. Y.; Geelhaar, L.; Chèze, C.; Kappers, M. J.; McAleese, C.; Humphreys, C. J.; Walther, T.

2011-11-01

Since the band structure of group III- nitrides presents a direct electronic transition with a band-gap energy covering the range from 3.4 eV for (GaN) to 6.2 eV (for AlN) at room temperature as well as a high thermal conductivity, aluminium gallium nitride (AlGaN) is a strong candidate for high-power and high-temperature electronic devices and short-wavelength (visible and ultraviolet) optoelectronic devices. We report here a study by energy-filtered transmission electron microscopy (EFTEM) and energy-dispersive X-ray spectroscopy (EDXS) of the micro structure and elemental distribution in different aluminium gallium nitride epitaxial layers grown by different research groups. A calibration procedure is out-lined that yields the Al content from EDXS to within ~1 at % precision.

Beating the thermodynamic limit with photo-activation of n-doping in organic semiconductors

NASA Astrophysics Data System (ADS)

Lin, Xin; Wegner, Berthold; Lee, Kyung Min; Fusella, Michael A.; Zhang, Fengyu; Moudgil, Karttikay; Rand, Barry P.; Barlow, Stephen; Marder, Seth R.; Koch, Norbert; Kahn, Antoine

2017-12-01

Chemical doping of organic semiconductors using molecular dopants plays a key role in the fabrication of efficient organic electronic devices. Although a variety of stable molecular p-dopants have been developed and successfully deployed in devices in the past decade, air-stable molecular n-dopants suitable for materials with low electron affinity are still elusive. Here we demonstrate that photo-activation of a cleavable air-stable dimeric dopant can result in kinetically stable and efficient n-doping of host semiconductors, whose reduction potentials are beyond the thermodynamic reach of the dimer’s effective reducing strength. Electron-transport layers doped in this manner are used to fabricate high-efficiency organic light-emitting diodes. Our strategy thus enables a new paradigm for using air-stable molecular dopants to improve conductivity in, and provide ohmic contacts to, organic semiconductors with very low electron affinity.

A neural approach for improving the measurement capability of an electronic nose

NASA Astrophysics Data System (ADS)

Chimenti, M.; DeRossi, D.; Di Francesco, F.; Domenici, C.; Pieri, G.; Pioggia, G.; Salvetti, O.

2003-06-01

Electronic noses, instruments for automatic recognition of odours, are typically composed of an array of partially selective sensors, a sampling system, a data acquisition device and a data processing system. For the purpose of evaluating the quality of olive oil, an electronic nose based on an array of conducting polymer sensors capable of discriminating olive oil aromas was developed. The selection of suitable pattern recognition techniques for a particular application can enhance the performance of electronic noses. Therefore, an advanced neural recognition algorithm for improving the measurement capability of the device was designed and implemented. This method combines multivariate statistical analysis and a hierarchical neural-network architecture based on self-organizing maps and error back-propagation. The complete system was tested using samples composed of characteristic olive oil aromatic components in refined olive oil. The results obtained have shown that this approach is effective in grouping aromas into different categories representative of their chemical structure.

Liquid metals as ultra-stretchable, soft, and shape reconfigurable conductors

NASA Astrophysics Data System (ADS)

Eaker, Collin B.; Dickey, Michael D.

2015-05-01

Conventional, rigid materials remain the key building blocks of most modern electronic devices, but they are limited in their ability to conform to curvilinear surfaces. It is possible to make electronic components that are flexible and in some cases stretchable by utilizing thin films, engineered geometries, or inherently soft and stretchable materials that maintain their function during deformation. Here, we describe the properties and applications of a micromoldable liquid metal that can form conductive components that are ultra-stretchable, soft, and shape-reconfigurable. This liquid metal is a gallium-based alloy with low viscosity and high conductivity. The metal develops spontaneously a thin, passivating oxide layer on the surface that allows the metal to be molded into non-spherical shapes, including films and wires, and patterned by direct-write techniques or microfluidic injection. Furthermore, unlike mercury, the liquid metal has low toxicity and negligible vapor pressure. This paper discusses the mechanical and electrical properties of the metal in the context of electronics, and discusses how the properties of the oxide layer have been exploited for new patterning techniques that enable soft, stretchable and reconfigurable devices.

Flexible organic light emitting diodes fabricated on biocompatible silk fibroin substrate

NASA Astrophysics Data System (ADS)

Liu, Yuqiang; Xie, Yuemin; Liu, Yuan; Song, Tao; Zhang, Ke-Qin; Liao, Liangsheng; Sun, Baoquan

2015-10-01

Flexible and biodegradable electronics are currently under extensive investigation for biocompatible and environmentally-friendly applications. Synthetic plastic foils are widely used as substrates for flexible electronics. But typical plastic substrates such as polyethylene naphthalate (PEN) could not be degraded in a natural bio-environment. A great demand still exists for a next-generation biocompatible and biodegradable substrate for future application. For example, electronic devices can be potentially integrated into the human body. In this work, we demonstrate that the biocompatible and biodegradable natural silk fibroin (SF) films embedded with silver nanowires (AgNWs) mesh could be employed as conductive transparent substrates to fabricate flexible organic light emitting diodes (OLEDs). Compared with commercial PEN substrates coated with indium tin oxide, the AgNWs/SF composite substrates exhibit a similar sheet resistance of 12 Ω sq-1, a lower surface roughness, as well as a broader light transmission range. Flexible OLEDs based on AgNWs/SF substrates achieve a current efficiency of 19 cd A-1, demonstrating the potential of the flexible AgNWs/SF films as conductive and transparent substrates for next-generation biodegradable devices.

Electrochemical Deposition of Nanostructured Conducting Polymer Coatings on Neural Prosthetic Devices

NASA Astrophysics Data System (ADS)

Yang, Junyan; Martin, David

2003-03-01

Micromachined neural prosthetic devices facilitate the functional stimulation of and recording from the central nervous system (CNS). These devices have been fabricated to consist of silicon shanks that have gold or iridium sites along their surface. Our goal is to improve the biocompatibility and long-term performance of the neural prosthetic probes when they are implanted chronically in the brain. In our most recent efforts we have established that electrochemical polymerization can be used to deposit fuzzy coatings of conducting polymers specifically on the electrode sites. For neural prosthetic devices that are intended for long term implantation, we need to develop surfaces that provide intimate contact and promote efficient signal transport at the interface of the microelectrode array and brain tissue. We have developed methods to rapidly and reliably fabricate nanostructured conducting polymer coatings on the electrode probes using templated and surfactant-mediated techniques. Conducting polymer nanomushrooms and nanohairs of polypyrrole (PPy) were electrochemically polymerized onto the functional sites of neural probes by using either nanoporous block copolymers thin films, "track-etched" polycarbonate films or anodic aluminium oxide membranes as templates. Nanofibers of conducting polymers have also been successfully obtained by polymerizations in the presence of surfactants. The influence of current density, monomer concentration, surfactant concentration, and deposition charge on the thickness and morphology of the nanostructured conducting polymer coatings has been studied by optical, scanned probe, scanning electron and transmission electron microscopy. As compared with the normal nodular morphology of polypyrrole, the nanostructured morphologies grown from the neural electrode result in fuzzy coatings with extremely high surface area. The electrical properties of the polymer coatings were studied by Impedance Spectroscopy (IS) and Cyclic Voltammetry (CV). The significant drop in impedance in magnitude and phase angle is consistent with an increase of the surface area due to the roughened surface morphology.

Nanoscale Devices for Solid State Refrigeration and Power Generation

DTIC Science & Technology

2004-01-01

techniques such as ballistic electron emission microscopy, scanning thermal microscopy, X - ray photoelectron emission spectroscopy, etc. The main emphasis is...0-7803-8363- X /04/$20.00 ©2004 IEEE 20th IEEE SEMI-THERM Symposium Nanoscale Devices for Solid State Refrigeration and Power Generation Ali...theories [9,23,24]. Since thermal conductivity is an average bulk effect involving many lattice vibrations (phonons modes), it is hard to

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guo, Ying; Liu, Tao; Wang, Ning

We report on high-efficiency planar heterojunction perovskite solar cells (PSCs) employing Ni-doped alpha-Fe2O3 as electron-transporting layer (ETL). The suitable addition of nickel (Ni) dopant could enhance the electron conductivity as well as induce downward shift of the conduction band minimum for alpha-Fe2O3, which facilitate electrons injection and transfer from the conduction band of the perovskite. As a consequence, a substantial reduction in the charge accumulation at the perovskite/ETL interface makes the device much less sensitive to scanning rate and direction, i.e., lower hysteresis. With a reverse scan for the optimized PSC under standard AM-1.5 sunlight illumination, it generates a competitivemore » power conversion efficiency (PCE) of 14.2% with a large short circuit current (J(sc)) of 22.35 mA/cm(2), an open circuit photovoltage (V-oc) of 0.92 V and a fill factor (FF) of 69.1%. Due to the small J-V hysteresis behavior, a higher stabilized PCE up to 11.6% near the maximum power point can be reached for the device fabricated with 4 mol% Ni-doped alpha-Fe2O3 ETL compared with the undoped alpha-Fe2O3 based cell (9.2%). Furthermore, a good stability of devices with exposure to ambient air and high levels of ultraviolet (UV)-light can be achieved. Overall, our results demonstrate that the simple solution-processed Ni-doped alpha-Fe2O3 can be a good candidate of the n-type collection layer for commercialization of PSCs.« less

Conductance of a quantum wire at low electron density

NASA Astrophysics Data System (ADS)

Matveev, Konstantin

2006-03-01

We study the transport of electrons through a long quantum wire connecting two bulk leads. As the electron density in the wire is lowered, the Coulomb interactions lead to short-range crystalline ordering of electrons. In this Wigner crystal state the spins of electrons form an antiferromagnetic Heisenberg spin chain with exponentially small exchange coupling J. Inhomogeneity of the electron density due to the coupling of the wire to the leads results in violation of spin-charge separation in the device. As a result the spins affect the conductance of the wire. At zero temperature the low-energy spin excitations propagate freely through the wire, and its conductance remains 2e^2/h. At finite temperature some of the spin excitations are reflected by the wire and contribute to its resistance. Since the energy of the elementary excitations in the spin chain (spinons) cannot exceed πJ/2, the conductance of the wire acquires an exponentially small negative correction δG - (-πJ/2T) at low temperatures T J. At higher temperatures, T J, most of the spin excitations in the leads are reflected by the wire, and the conductance levels off at a new universal value e^2/h. This result is consistent with experimental observations of a mini-plateau of conductance at e^2/h in quantum wires in the absence of magnetic field.

High temperature thermal management with boron nitride nanosheets.

PubMed

Wang, Yilin; Xu, Lisha; Yang, Zhi; Xie, Hua; Jiang, Puqing; Dai, Jiaqi; Luo, Wei; Yao, Yonggang; Hitz, Emily; Yang, Ronggui; Yang, Bao; Hu, Liangbing

2017-12-21

The rapid development of high power density devices requires more efficient heat dissipation. Recently, two-dimensional layered materials have attracted significant interest due to their superior thermal conductivity, ease of production and chemical stability. Among them, hexagonal boron nitride (h-BN) is electrically insulating, making it a promising thermal management material for next-generation electronics. In this work, we demonstrated that an h-BN thin film composed of layer-by-layer laminated h-BN nanosheets can effectively enhance the lateral heat dissipation on the substrate. We found that by using the BN-coated glass instead of bare glass as the substrate, the highest operating temperature of a reduced graphene oxide (RGO) based device could increase from 700 °C to 1000 °C, and at the same input power, the operating temperature of the RGO device is effectively decreased. The remarkable performance improvement using the BN coating originates from its anisotropic thermal conductivity: a high in-plane thermal conductivity of 14 W m -1 K -1 for spreading and a low cross-plane thermal conductivity of 0.4 W m -1 K -1 to avoid a hot spot right underneath the device. Our results provide an effective approach to improve the heat dissipation in integrated circuits and high power devices.

Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer

DOEpatents

Spahn, O.B.; Lear, K.L.

1998-03-10

The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g., Al{sub 2}O{sub 3}), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3--1.6 {mu}m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation. 10 figs.

Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer

DOEpatents

Spahn, Olga B.; Lear, Kevin L.

1998-01-01

A semiconductor structure. The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g. Al.sub.2 O.sub.3), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3-1.6 .mu.m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation.

Low-Temperature Scanning Capacitance Probe for Imaging Electron Motion

NASA Astrophysics Data System (ADS)

Bhandari, S.; Westervelt, R. M.

2014-12-01

Novel techniques to probe electronic properties at the nanoscale can shed light on the physics of nanoscale devices. In particular, studying the scattering of electrons from edges and apertures at the nanoscale and imaging the electron profile in a quantum dot, have been of interest [1]. In this paper, we present the design and implementation of a cooled scanning capacitance probe that operates at liquid He temperatures to image electron waves in nanodevices. The conducting tip of a scanned probe microscope is held above the nanoscale structure, and an applied sample-to-tip voltage creates an image charge that is measured by a cooled charge amplifier [2] adjacent to the tip. The circuit is based on a low-capacitance, high- electron-mobility transistor (Fujitsu FHX35X). The input is a capacitance bridge formed by a low capacitance pinched-off HEMT transistor and tip-sample capacitance. We have achieved low noise level (0.13 e/VHz) and high spatial resolution (100 nm) for this technique, which promises to be a useful tool to study electronic behavior in nanoscale devices.

Theoretical modeling of electronic transport in molecular devices

NASA Astrophysics Data System (ADS)

Piccinin, Simone

In this thesis a novel approach for simulating electronic transport in nanoscale structures is introduced. We consider an open quantum system (the electrons of structure) accelerated by an external electromotive force and dissipating energy through inelastic scattering with a heat bath (phonons) acting on the electrons. This method can be regarded as a quantum-mechanical extension of the semi-classical Boltzmann transport equation. We use periodic boundary conditions and employ Density Functional Theory to recast the many-particle problem in an effective single-particle mean-field problem. By explicitly treating the dissipation in the electrodes, the behavior of the potential is an outcome of our method, at variance with the scattering approaches based on the Landauer formalism. We study the self-consistent steady-state solution, analyzing the out-of-equilibrium electron distribution, the electrical characteristics, the behavior of the self-consistent potential and the density of states of the system. We apply the method to the study of electronic transport in several molecular devices, consisting of small organic molecules or atomic wires sandwiched between gold surfaces. For gold wires we recover the experimental evidence that transport in short wires is ballistic, independent of the length of the wire and with conductance of one quantum. In benzene-1,4-dithiol we find that the delocalization of the frontier orbitals of the molecule is responsible for the high value of conductance and that, by inserting methylene groups to decouple the sulfur atoms from the carbon ring, the current is reduced, in agreement with the experimental measurements. We study the effect a geometrical distortion in a molecular device, namely the relative rotation of the carbon rings in a biphenyl-4,4'-dithiol molecule. We find that the reduced coupling between pi orbitals of the rings induced by the rotation leads to a reduction of the conductance and that this behavior is captured by a simple two level model. Finally the transport properties of alkanethiol monolayers are analyzed by means of the local density of states at the Fermi energy: we find an exponential dependence of the current on the length of the chain, in quantitative agreement with the corresponding experiments.

Electrical NEP in Hot-Electron Titanium Superconducting Bolometers

NASA Technical Reports Server (NTRS)

Karasik, Boris S.; Pereverzev, Sergey V.; Olaya, David; Wei, Jian; Gershenson, Michael E.; Sergeev, Andrei V.

2008-01-01

We are presenting the current progress on the titanium (Ti) hot-electron transition-edge devices. The ultimate goal of this work is to develop a submillimeter Hot-Electron Direct Detector (HEDD) with the noise equivalent power NEP = 10(sup -1) - 10(sup -20) W/Hz(sup 1/2) for the moderate resolution spectroscopy and Cosmic Microwave Background (CMB) studies on future space telescope (e.g., SPICA, SAFIR, SPECS, CMBPol) with cryogenically cooled (approximately 4-5 K) mirrors. Recently, we have achieved the extremely low thermal conductance (approximately 20 fW/K at 300 mK and approximately 0.1 fW/K at 40 mK) due to the electron-phonon decoupling in Ti nanodevices with niobium (Nb) Andreev contacts. This thermal conductance translates into the "phonon-noise" NEP approximately equal to 3 x 10(sup -21) W/Hz(sup 1/2) at 40 mK and NEP approximately equal to 3 x 10(sup -19) W/Hz(sup 1/2) at 300 mK. These record data indicate the great potential of the hot-electron detector for meeting many application needs. Beside the extremely low phonon-noise NEP, the nanobolometers have a very low electron heat capacitance that makes them promising as detectors of single THz photons. As the next step towards the practical demonstration of the HEDD, we fabricated and tested somewhat larger than in Ref.1 devices (approximately 6 micrometers x 0.35 micrometers x 40 nm) whose critical temperature is well reproduced in the range 300-350 mK. The output electrical noise measured in these devices with a low-noise dc SQUID is dominated by the thermal energy fluctuations (ETF) aka "phonon noise". This indicates the high electrothermal loop gain that effectively suppresses the contributions of the Johnson noise and the amplifier (SQUID) noise. The electrical NEP = 6.7 x 10(sup -18) W/Hz(sup 1/2) derived from these measurements is in good agreement with the predictions based on the thermal conductance data. The very low NEP and the high speed (approximately microns) are a unique combination not found in other detectors.

Atomic and electronic structure of exfoliated black phosphorus

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Ryan J.; Topsakal, Mehmet; Jeong, Jong Seok

2015-11-15

Black phosphorus, a layered two-dimensional crystal with tunable electronic properties and high hole mobility, is quickly emerging as a promising candidate for future electronic and photonic devices. Although theoretical studies using ab initio calculations have tried to predict its atomic and electronic structure, uncertainty in its fundamental properties due to a lack of clear experimental evidence continues to stymie our full understanding and application of this novel material. In this work, aberration-corrected scanning transmission electron microscopy and ab initio calculations are used to study the crystal structure of few-layer black phosphorus. Directly interpretable annular dark-field images provide a three-dimensional atomic-resolutionmore » view of this layered material in which its stacking order and all three lattice parameters can be unambiguously identified. In addition, electron energy-loss spectroscopy (EELS) is used to measure the conduction band density of states of black phosphorus, which agrees well with the results of density functional theory calculations performed for the experimentally determined crystal. Furthermore, experimental EELS measurements of interband transitions and surface plasmon excitations are also consistent with simulated results. Finally, the effects of oxidation on both the atomic and electronic structure of black phosphorus are analyzed to explain observed device degradation. The transformation of black phosphorus into amorphous PO{sub 3} or H{sub 3}PO{sub 3} during oxidation may ultimately be responsible for the degradation of devices exposed to atmosphere over time.« less

Self-assembled fibre optoelectronics with discrete translational symmetry

PubMed Central

Rein, Michael; Levy, Etgar; Gumennik, Alexander; Abouraddy, Ayman F.; Joannopoulos, John; Fink, Yoel

2016-01-01

Fibres with electronic and photonic properties are essential building blocks for functional fabrics with system level attributes. The scalability of thermal fibre drawing approach offers access to large device quantities, while constraining the devices to be translational symmetric. Lifting this symmetry to create discrete devices in fibres will increase their utility. Here, we draw, from a macroscopic preform, fibres that have three parallel internal non-contacting continuous domains; a semiconducting glass between two conductors. We then heat the fibre and generate a capillary fluid instability, resulting in the selective transformation of the cylindrical semiconducting domain into discrete spheres while keeping the conductive domains unchanged. The cylindrical-to-spherical expansion bridges the continuous conducting domains to create ∼104 self-assembled, electrically contacted and entirely packaged discrete spherical devices per metre of fibre. The photodetection and Mie resonance dependent response are measured by illuminating the fibre while connecting its ends to an electrical readout. PMID:27698454

Negative differential resistance observation in complex convoluted fullerene junctions

NASA Astrophysics Data System (ADS)

Kaur, Milanpreet; Sawhney, Ravinder Singh; Engles, Derick

2018-04-01

In this work, we simulated the smallest fullerene molecule, C20 in a two-probe device model with gold electrodes. The gold electrodes comprised of (011) miller planes were carved to construct the novel geometry based four unique shapes, which were strung to fullerene molecules through mechanically controlled break junction techniques. The organized devices were later scrutinized using non-equilibrium Green's function based on the density functional theory to calculate their molecular orbitals, energy levels, charge transfers, and electrical parameters. After intense scrutiny, we concluded that five-edged and six-edged devices have the lowest and highest current-conductance values, which result from their electrode-dominating and electrode-subsidiary effects, respectively. However, an interesting observation was that the three-edged and four-edged electrodes functioned as semi-metallic in nature, allowing the C20 molecule to demonstrate its performance with the complementary effect of these electrodes in the electron conduction process of a two-probe device.

Self-assembled fibre optoelectronics with discrete translational symmetry.

PubMed

Rein, Michael; Levy, Etgar; Gumennik, Alexander; Abouraddy, Ayman F; Joannopoulos, John; Fink, Yoel

2016-10-04

Fibres with electronic and photonic properties are essential building blocks for functional fabrics with system level attributes. The scalability of thermal fibre drawing approach offers access to large device quantities, while constraining the devices to be translational symmetric. Lifting this symmetry to create discrete devices in fibres will increase their utility. Here, we draw, from a macroscopic preform, fibres that have three parallel internal non-contacting continuous domains; a semiconducting glass between two conductors. We then heat the fibre and generate a capillary fluid instability, resulting in the selective transformation of the cylindrical semiconducting domain into discrete spheres while keeping the conductive domains unchanged. The cylindrical-to-spherical expansion bridges the continuous conducting domains to create ∼10 4 self-assembled, electrically contacted and entirely packaged discrete spherical devices per metre of fibre. The photodetection and Mie resonance dependent response are measured by illuminating the fibre while connecting its ends to an electrical readout.

Investigation of resistive switching behaviours in WO3-based RRAM devices

NASA Astrophysics Data System (ADS)

Li, Ying-Tao; Long, Shi-Bing; Lü, Hang-Bing; Liu, Qi; Wang, Qin; Wang, Yan; Zhang, Sen; Lian, Wen-Tai; Liu, Su; Liu, Ming

2011-01-01

In this paper, a WO3-based resistive random access memory device composed of a thin film of WO3 sandwiched between a copper top and a platinum bottom electrodes is fabricated by electron beam evaporation at room temperature. The reproducible resistive switching, low power consumption, multilevel storage possibility, and good data retention characteristics demonstrate that the Cu/WO3/Pt memory device is very promising for future nonvolatile memory applications. The formation and rupture of localised conductive filaments is suggested to be responsible for the observed resistive switching behaviours.

The impact of nanocontact on nanowire based nanoelectronics.

PubMed

Lin, Yen-Fu; Jian, Wen-Bin

2008-10-01

Nanowire-based nanoelectronic devices will be innovative electronic building blocks from bottom up. The reduced nanocontact area of nanowire devices magnifies the contribution of contact electrical properties. Although a lot of two-contact-based ZnO nanoelectronics have been demonstrated, the electrical properties bringing either from the nanocontacts or from the nanowires have not been considered yet. High quality ZnO nanowires with a small deviation and an average diameter of 38 nm were synthesized to fabricate more than thirty nanowire devices. According to temperature behaviors of current-voltage curves and resistances, the devices could be grouped into three types. Type I devices expose thermally activated transport in ZnO nanowires and they could be considered as two Ohmic nanocontacts of the Ti electrode contacting directly on the nanowire. For those nanowire devices having a high resistance at room temperatures, they can be fitted accurately with the thermionic-emission theory and classified into type II and III devices according to their rectifying and symmetrical current-voltage behaviors. The type II device has only one deteriorated nanocontact and the other one Ohmic contact on single ZnO nanowire. An insulating oxide layer with thickness less than 20 nm should be introduced to describe electron hopping in the nanocontacts, so as to signalize one- and high-dimensional hopping conduction in type II and III devices.

All-in-One Graphene Based Composite Fiber: Toward Wearable Supercapacitor.

PubMed

Lim, Lucas; Liu, Yangshuai; Liu, Wenwen; Tjandra, Ricky; Rasenthiram, Lathankan; Chen, Zhongwei; Yu, Aiping

2017-11-15

Graphene fibers (GF) have aroused great interest in wearable electronics applications because of their excellent mechanical flexibility and superior electrical conductivity. Herein, an all-in-one graphene and MnO 2 composite hybrid supercapacitor fiber device has been developed. The unique coaxial design of this device facilitates large-scale production while avoiding the risk of short circuiting. The core backbone of the device consists of GF that not only provides mechanical stability but also ensures fast electron transfer during charge-discharge. The introduction of a MnO 2 (200 nm in length) hierarchical nanostructured film enhanced the pseudocapacitance dramatically compared to the graphene-only device in part because of the abundant number of active sites in contact with the poly(vinyl alcohol) (PVA)/H 3 PO 4 electrolyte. The entire device exhibits outstanding mechanical strength as well as good electrocapacitive performance with a volumetric capacitance of 29.6 F cm -3 at 2 mv s -1 . The capacitance of the device did not fade under bending from 0° to 150°, while the capacitance retention of 93% was observed after 1000 cycles. These unique features make this device a promising candidate for applications in wearable fabric supercapacitors.

A 2D Material based Gate Tunable Memristive Device for Emulating Modulatory Input-dependent Hetero-synaptic Plasticity.

NASA Astrophysics Data System (ADS)

Yan, Xiaodong; Tian, He; Xie, Yujun; Kostelec, Andrew; Zhao, Huan; Cha, Judy J.; Tice, Jesse; Wang, Han

Modulatory input-dependent plasticity is a well-known type of hetero-synaptic response where the release of neuromodulators can alter the efficacy of neurotransmission in a nearby chemical synapse. Solid-state devices that can mimic such phenomenon are desirable for enhancing the functionality and reconfigurability of neuromorphic electronics. In this work, we demonstrated a tunable artificial synaptic device concept based on the properties of graphene and tin oxide that can mimic the modulatory input-dependent plasticity. By using graphene as the contact electrode, a third electrode terminal can be used to modulate the conductive filament formation in the vertical tin oxide based resistive memory device. The resulting synaptic characteristics of this device, in terms of the profile of synaptic weight change and the spike-timing-dependent-plasticity, is tunable with the bias at the modulating terminal. Furthermore, the synaptic response can be reconfigured between excitatory and inhibitory modes by this modulating bias. The operation mechanism of the device is studied with combined experimental and theoretical analysis. The device is attractive for application in neuromorphic electronics. This work is supported by ARO and NG-ION2 at USC.

Electronic Tongue Containing Redox and Conductivity Sensors

NASA Technical Reports Server (NTRS)

Buehler, Martin

2007-01-01

The Electronic Tongue (E-tongue 2) is an assembly of sensors for measuring concentrations of metal ions and possibly other contaminants in water. Potential uses for electronic tongues include monitoring the chemical quality of water in a variety of natural, industrial, and laboratory settings, and detecting micro-organisms indirectly by measuring microbially influenced corrosion. The device includes a heater, a temperature sensor, an oxidation/reduction (redox) sensor pair, an electrical sensor, an array of eight galvanic cells, and eight ion-specific electrodes.

Two-dimensional Cu2Si sheet: a promising electrode material for nanoscale electronics.

PubMed

Yam, Kah Meng; Guo, Na; Zhang, Chun

2018-06-15

Building electronic devices on top of two-dimensional (2D) materials has recently become one of most interesting topics in nanoelectronics. Finding high-performance 2D electrode materials is one central issue in 2D nanoelectronics. In the current study, based on first-principles calculations, we compare the electronic and transport properties of two nanoscale devices. One device consists of two single-atom-thick planar Cu 2 Si electrodes, and a nickel phthalocyanine (NiPc) molecule in the middle. The other device is made of often-used graphene electrodes and a NiPc molecule. Planer Cu 2 Si is a new type of 2D material that was recently predicted to exist and be stable under room temperature [11]. We found that at low bias voltages, the electric current through the Cu 2 Si-NiPc-Cu 2 Si junction is about three orders higher than that through graphene-NiPc-graphene. Detailed analysis shows that the surprisingly high conductivity of Cu 2 Si-NiPc-Cu 2 Si originates from the mixing of the Cu 2 Si state near Fermi energy and the highest occupied molecular orbital of NiPc. These results suggest that 2D Cu 2 Si may be an excellent candidate for electrode materials for future nanoscale devices.

Two-dimensional Cu2Si sheet: a promising electrode material for nanoscale electronics

NASA Astrophysics Data System (ADS)

Meng Yam, Kah; Guo, Na; Zhang, Chun

2018-06-01

Building electronic devices on top of two-dimensional (2D) materials has recently become one of most interesting topics in nanoelectronics. Finding high-performance 2D electrode materials is one central issue in 2D nanoelectronics. In the current study, based on first-principles calculations, we compare the electronic and transport properties of two nanoscale devices. One device consists of two single-atom-thick planar Cu2Si electrodes, and a nickel phthalocyanine (NiPc) molecule in the middle. The other device is made of often-used graphene electrodes and a NiPc molecule. Planer Cu2Si is a new type of 2D material that was recently predicted to exist and be stable under room temperature [11]. We found that at low bias voltages, the electric current through the Cu2Si–NiPc–Cu2Si junction is about three orders higher than that through graphene–NiPc–graphene. Detailed analysis shows that the surprisingly high conductivity of Cu2Si–NiPc–Cu2Si originates from the mixing of the Cu2Si state near Fermi energy and the highest occupied molecular orbital of NiPc. These results suggest that 2D Cu2Si may be an excellent candidate for electrode materials for future nanoscale devices.

Architectures for Improved Organic Semiconductor Devices

NASA Astrophysics Data System (ADS)

Beck, Jonathan H.

Advancements in the microelectronics industry have brought increasing performance and decreasing prices to a wide range of users. Conventional silicon-based electronics have followed Moore's law to provide an ever-increasing integrated circuit transistor density, which drives processing power, solid-state memory density, and sensor technologies. As shrinking conventional integrated circuits became more challenging, researchers began exploring electronics with the potential to penetrate new applications with a low price of entry: "Electronics everywhere." The new generation of electronics is thin, light, flexible, and inexpensive. Organic electronics are part of the new generation of thin-film electronics, relying on the synthetic flexibility of carbon molecules to create organic semiconductors, absorbers, and emitters which perform useful tasks. Organic electronics can be fabricated with low energy input on a variety of novel substrates, including inexpensive plastic sheets. The potential ease of synthesis and fabrication of organic-based devices means that organic electronics can be made at very low cost. Successfully demonstrated organic semiconductor devices include photovoltaics, photodetectors, transistors, and light emitting diodes. Several challenges that face organic semiconductor devices are low performance relative to conventional devices, long-term device stability, and development of new organic-compatible processes and materials. While the absorption and emission performance of organic materials in photovoltaics and light emitting diodes is extraordinarily high for thin films, the charge conduction mobilities are generally low. Building highly efficient devices with low-mobility materials is one challenge. Many organic semiconductor films are unstable during fabrication, storage, and operation due to reactions with water, oxygen and hydroxide. A final challenge facing organic electronics is the need for new processes and materials for electrodes, semiconductors and substrates compatible with low-temperature, flexible, and oxygenated and aromatic solvent-free fabrication. Materials and processes must be capable of future high volume production in order to enable low costs. In this thesis we explore several techniques to improve organic semiconductor device performance and enable new fabrication processes. In Chapter 2, I describe the integration of sub-optical-wavelength nanostructured electrodes that improve fill factor and power conversion efficiency in organic photovoltaic devices. Photovoltaic fill factor performance is one of the primary challenges facing organic photovoltaics because most organic semiconductors have poor charge mobility. Our electrical and optical measurements and simulations indicate that nanostructured electrodes improve charge extraction in organic photovoltaics. In Chapter 3, I describe a general method for maximizing the efficiency of organic photovoltaic devices by simultaneously optimizing light absorption and charge carrier collection. We analyze the potential benefits of light trapping strategies for maximizing the overall power conversion efficiency of organic photovoltaic devices. This technique may be used to improve organic photovoltaic materials with low absorption, or short exciton diffusion and carrier-recombination lengths, opening up the device design space. In Chapter 4, I describe a process for high-quality graphene transfer onto chemically sensitive, weakly interacting organic semiconductor thin-films. Graphene is a promising flexible and highly transparent electrode for organic electronics; however, transferring graphene films onto organic semiconductor devices was previously impossible. We demonstrate a new transfer technique based on an elastomeric stamp coated with an fluorinated polymer release layer. We fabricate three classes of organic semiconductor devices: field effect transistors without high temperature annealing, transparent organic light-emitting diodes, and transparent small-molecule organic photovoltaic devices.

Development and application of a 2-electron reduced density matrix approach to electron transport via molecular junctions

NASA Astrophysics Data System (ADS)

Hoy, Erik P.; Mazziotti, David A.; Seideman, Tamar

2017-11-01

Can an electronic device be constructed using only a single molecule? Since this question was first asked by Aviram and Ratner in the 1970s [Chem. Phys. Lett. 29, 277 (1974)], the field of molecular electronics has exploded with significant experimental advancements in the understanding of the charge transport properties of single molecule devices. Efforts to explain the results of these experiments and identify promising new candidate molecules for molecular devices have led to the development of numerous new theoretical methods including the current standard theoretical approach for studying single molecule charge transport, i.e., the non-equilibrium Green's function formalism (NEGF). By pairing this formalism with density functional theory (DFT), a wide variety of transport problems in molecular junctions have been successfully treated. For some systems though, the conductance and current-voltage curves predicted by common DFT functionals can be several orders of magnitude above experimental results. In addition, since density functional theory relies on approximations to the exact exchange-correlation functional, the predicted transport properties can show significant variation depending on the functional chosen. As a first step to addressing this issue, the authors have replaced density functional theory in the NEGF formalism with a 2-electron reduced density matrix (2-RDM) method, creating a new approach known as the NEGF-RDM method. 2-RDM methods provide a more accurate description of electron correlation compared to density functional theory, and they have lower computational scaling compared to wavefunction based methods of similar accuracy. Additionally, 2-RDM methods are capable of capturing static electron correlation which is untreatable by existing NEGF-DFT methods. When studying dithiol alkane chains and dithiol benzene in model junctions, the authors found that the NEGF-RDM predicts conductances and currents that are 1-2 orders of magnitude below those of B3LYP and M06 DFT functionals. This suggests that the NEGF-RDM method could be a viable alternative to NEGF-DFT for molecular junction calculations.

Efficient recyclable organic solar cells on cellulose nanocrystal substrates with a conducting polymer top electrode deposited by film-transfer lamination

Treesearch

Yinhua Zhou; Talha M. Khan; Jen-Chieh Liu; Canek Fuentes-Hernandez; Jae Won Shim; Ehsan Najafabadi; Jeffrey P. Youngblood; Robert J. Moon; Bernard Kippelen

2014-01-01

We report on efficient solar cells on recyclable cellulose nanocrystal (CNC) substrates with a new device structure wherein polyethylenimine-modified Ag is used as the bottom electron-collecting electrode and high-conductivity poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate) (PEDOT:PSS, PH1000) is used as the semitransparent top holecollecting electrode. The...

Chemical processing of three-dimensional graphene networks on transparent conducting electrodes for depleted-heterojunction quantum dot solar cells.

PubMed

Tavakoli, Mohammad Mahdi; Simchi, Abdolreza; Fan, Zhiyong; Aashuri, Hossein

2016-01-07

We present a novel chemical procedure to prepare three-dimensional graphene networks (3DGNs) as a transparent conductive film to enhance the photovoltaic performance of PbS quantum-dot (QD) solar cells. It is shown that 3DGN electrodes enhance electron extraction, yielding a 30% improvement in performance compared with the conventional device.

Micro-Columnated Loop Heat Pipe: The Future of Electronic Substrates

NASA Astrophysics Data System (ADS)

Dhillon, Navdeep Singh

The modern world is run by semiconductor-based electronic systems. Due to continuous improvements in semiconductor device fabrication, there is a clear trend in the market towards the development of electronic devices and components that not only deliver enhanced computing power, but are also more compact. Thermal management has emerged as the primary challenge in this scenario where heat flux dissipation of electronic chips is increasing exponentially, but conventional cooling solutions such as conduction and convection are no longer feasible. To keep device junction temperatures within the safe operating limit, there is an urgent requirement for ultra-high-conductivity thermal substrates that not only absorb and transport large heat fluxes, but can also provide localized cooling to thermal hotspots. This dissertation describes the design, modeling, and fabrication of a phase change-based, planar, ultra-thin, passive thermal transport system that is inspired by the concept of loop heat pipes and capillary pumped loops. Fabricated on silicon and Pyrex wafers using microfabrication techniques, the micro-columnated loop heat pipe (muCLHP) can be integrated directly with densely packed or multiply-stacked electronic substrates, to provide localized high-heat-flux thermal management. The muCLHP employs a dual-scale coherent porous silicon(CPS)-based micro-columnated wicking structure, where the primary CPS wick provides large capillary forces for fluid transport, while a secondary surface-wick maximizes the rate of thin-film evaporation. To overcome the wick thickness limitation encountered in conventional loop heat pipes, strategies based on MEMS surface micromachining techniques were developed to reduce parasitic heat flow from the evaporator to the compensation chamber of the device. Finite element analysis was used to confirm this reduction in a planar evaporator design, thus enabling the generation of a large motive temperature head for continuous device operation. To predict the overall heat carrying capacity of the muCLHP in the capillary pumping limit, an analytical model was developed to account for a steady state pressure balance in the device flow loop. Based on this model, a design optimization study, employing monotonicity analysis and numerical optimization techniques, was undertaken. It was found that an optimized muCLHP device can absorb heat fluxes as large as 1293 W/cm2 when water is used as a working fluid. A finite volume method-based numerical model was also developed to compute the rates of thin-film evaporation from the patterned surface of the secondary wick. The numerical results indicated that, by properly optimizing the dual-scale wick topology, allowable evaporative heat fluxes can be made commensurate with the heat flux performance predicted by the capillary pumping limit. The latter part of the dissertation deals with the fabrication, packaging, and experimental testing of several in-plane-wicking micro loop heat pipe (muLHP) prototypes. These devices were fabricated on silicon and Pyrex substrates and closely resemble the muCLHP design philosophy, with the exception that the CPS wick is substituted with an easier to fabricate in-plane wick. A novel thermal-flux method was developed for the degassing and fluid charging of the muLHP prototypes. Experiments were conducted to study the process of evaporation and dynamics of the liquid and vapor phases in the device flow loop. Using these results, the overall device and individual component topologies critical to the operation of the two-phase flow loop were identified. A continuous two-phase device flow loop was demonstrated for applied evaporator heat fluxes as high as 41 W/cm2. The performance of these devices, currently found to be limited by the motive temperature head requirement, can be significantly improved by implementing the parasitic heat flow-reduction strategies developed in this work. The 3-D thin-film evaporation model, when integrated into the overall device modeling framework, will enable a design optimization of the micro-columnated wick for further device performance enhancements.

Cervical Proprioception in a Young Population Who Spend Long Periods on Mobile Devices: A 2-Group Comparative Observational Study.

PubMed

Portelli, Andrew; Reid, Susan A

2018-02-01

The purpose of this study was to evaluate if young people with insidious-onset neck pain who spend long periods on mobile electronic devices (known as "text neck") have impaired cervical proprioception and if this is related to time on devices. A 2-group comparative observational study was conducted at an Australian university. Twenty-two participants with text neck and 22 asymptomatic controls, all of whom were 18 to 35 years old and spent ≥4 hours per day on unsupported electronic devices, were assessed using the head repositioning accuracy (HRA) test. Differences between groups were calculated using independent sample t-tests, and correlations between neck pain intensity, time on devices, and HRA test were performed using Pearson's bivariate analysis. During cervical flexion, those with text neck (n = 22, mean age ± standard deviation [SD]: 21 ± 4 years, 59% female) had a 3.9° (SD: 1.4°) repositioning error, and the control group (n = 22, 20 ± 1 years, 68% female) had a 2.9° (SD: 1.2°) error. The mean difference was 1° (95% confidence interval: 0-2, P = .02). For other cervical movements, there was no difference between groups. There was a moderately significant correlation (P ≤ .05) between time spent on electronic devices and cervical pain intensity and between cervical pain intensity and HRA during flexion. The participants with text neck had a greater proprioceptive error during cervical flexion compared with controls. This could be related to neck pain and time spent on electronic devices. Copyright © 2018. Published by Elsevier Inc.

Melanin: spin behaviour and implications for bioelectronic devices (Presentation Recording)

NASA Astrophysics Data System (ADS)

Meredith, Paul; Sheliakina, Margarita; Mostert, Bernard

2015-10-01

The melanins are a broad class of pigmentary macromolecules found through nature that perform a wide range of functions including photo-protection [1]. The most common melanin - the brown, black pigment eumelanin, has been much studied because of its role in melanoma and also for its functional material properties [2]. Synthetic eumelanin has been shown to be photoconductive in the solid state and also possess a water content dependent dark conductivity [3]. It is now well established that these electrical properties arise from hybrid ionic-electronic behaviour, leading to the proposition that melanins could be model biocompatible systems for ion-to-electron transduction in bioelectronics. In my talk, I will discuss the basic science behind these bioelectronics properties - electrical and optical. In this context I will also describe recent electron paramagnetic spin studies which isolate the role of the various chemical moieties responsible for the hybrid ionic-electronic behaviour. I will also highlight preliminary results on prototype melanin-based bioelectronics devices and discuss possible architectures to realise elements such as solid-state switches and transducers. [1] "The physical and chemical properties of eumelanin", P. Meredith and T. Sarna, Pigment Cell Research, 19(6), pp572-594 (2006). [2] "Electronic and optoelectronic materials and devices inspired by nature", P Meredith, C.J. Bettinger, M. Irimia-Vladu, A.B. Mostert and P.E. Schwenn, Reports on Progress in Physics, 76, 034501 (2013). [3] "Is melanin a semiconductor: humidity induced self doping and the electrical conductivity of a biopolymer", A.B. Mostert, B.J. Powell, F.L. Pratt, G.R. Hanson, T. Sarna, I.R. Gentle and P. Meredith, Proceedings of the National Academy of Sciences of the USA, 109(23), 8943-8947 (2012).

Preparation of solid silver nanoparticles for inkjet printed flexible electronics with high conductivity.

PubMed

Shen, Wenfeng; Zhang, Xianpeng; Huang, Qijin; Xu, Qingsong; Song, Weijie

2014-01-01

Silver nanoparticles (NPs) which could be kept in solid form and were easily stored without degeneration or oxidation at room temperature for a long period of time were synthesized by a simple and environmentally friendly wet chemistry method in an aqueous phase. Highly stable dispersions of aqueous silver NP inks, sintered at room temperature, for printing highly conductive tracks (∼8.0 μΩ cm) were prepared simply by dispersing the synthesized silver NP powder in water. These inks are stable, fairly homogeneous and suitable for a wide range of patterning techniques. The inks were successfully printed on paper and polyethylene terephthalate (PET) substrates using a common color printer. Upon annealing at 180 °C, the resistivity of the printed silver patterns decreased to 3.7 μΩ cm, which is close to twice that of bulk silver. Various factors affecting the resistivity of the printed silver patterns, such as annealing temperature and the number of printing cycles, were investigated. The resulting high conductivity of the printed silver patterns reached over 20% of the bulk silver value under ambient conditions, which enabled the fabrication of flexible electronic devices, as demonstrated by the inkjet printing of conductive circuits of LED devices.

Anomalous Stretchable Conductivity Using an Engineered Tricot Weave.

PubMed

Lee, Yong-Hee; Kim, Yoonseob; Lee, Tae-Ik; Lee, Inhwa; Shin, Jaeho; Lee, Hyun Soo; Kim, Taek-Soo; Choi, Jang Wook

2015-12-22

Robust electric conduction under stretching motions is a key element in upcoming wearable electronic devices but is fundamentally very difficult to achieve because percolation pathways in conductive media are subject to collapse upon stretching. Here, we report that this fundamental challenge can be overcome by using a parameter uniquely available in textiles, namely a weaving structure. A textile structure alternately interwoven with inelastic and elastic yarns, achieved via a tricot weave, possesses excellent elasticity (strain up to 200%) in diagonal directions. When this textile is coated with conductive nanomaterials, proper textile engineering allows the textile to obtain an unprecedented 7-fold conductivity increase, with conductivity reaching 33,000 S cm(-1), even at 130% strain, due to enhanced interyarn contacts. The observed stretching conductivity can be described well using a modified 3D percolation theory that reflects the weaving effect and is also utilized for stretchable electronic interconnects and supercapacitors with high performance.

3D nanostructured inkjet printed graphene via UV-pulsed laser irradiation enables paper-based electronics and electrochemical devices.

PubMed

Das, Suprem R; Nian, Qiong; Cargill, Allison A; Hondred, John A; Ding, Shaowei; Saei, Mojib; Cheng, Gary J; Claussen, Jonathan C

2016-09-21

Emerging research on printed and flexible graphene-based electronics is beginning to show tremendous promise for a wide variety of fields including wearable sensors and thin film transistors. However, post-print annealing/reduction processes that are necessary to increase the electrical conductivity of the printed graphene degrade sensitive substrates (e.g., paper) and are whole substrate processes that are unable to selectively anneal/reduce only the printed graphene-leaving sensitive device components exposed to damaging heat or chemicals. Herein a pulsed laser process is introduced that can selectively irradiate inkjet printed reduced graphene oxide (RGO) and subsequently improve the electrical conductivity (Rsheet∼0.7 kΩ□(-1)) of printed graphene above previously published reports. Furthermore, the laser process is capable of developing 3D petal-like graphene nanostructures from 2D planar printed graphene. These visible morphological changes display favorable electrochemical sensing characteristics-ferricyanide cyclic voltammetry with a redox peak separation (ΔEp) ≈ 0.7 V as well as hydrogen peroxide (H2O2) amperometry with a sensitivity of 3.32 μA mM(-1) and a response time of <5 s. Thus this work paves the way for not only paper-based electronics with graphene circuits, it enables the creation of low-cost and disposable graphene-based electrochemical electrodes for myriad applications including sensors, biosensors, fuel cells, and theranostic devices.

One-Step Fabrication of Stretchable Copper Nanowire Conductors by a Fast Photonic Sintering Technique and Its Application in Wearable Devices.

PubMed

Ding, Su; Jiu, Jinting; Gao, Yue; Tian, Yanhong; Araki, Teppei; Sugahara, Tohru; Nagao, Shijo; Nogi, Masaya; Koga, Hirotaka; Suganuma, Katsuaki; Uchida, Hiroshi

2016-03-09

Copper nanowire (CuNW) conductors have been considered to have a promising perspective in the area of stretchable electronics due to the low price and high conductivity. However, the fabrication of CuNW conductors suffers from harsh conditions, such as high temperature, reducing atmosphere, and time-consuming transfer step. Here, a simple and rapid one-step photonic sintering technique was developed to fabricate stretchable CuNW conductors on polyurethane (PU) at room temperature in air environment. It was observed that CuNWs were instantaneously deoxidized, welded and simultaneously embedded into the soft surface of PU through the one-step photonic sintering technique, after which highly conductive network and strong adhesion between CuNWs and PU substrates were achieved. The CuNW/PU conductor with sheet resistance of 22.1 Ohm/sq and transmittance of 78% was achieved by the one-step photonic sintering technique within only 20 μs in air. Besides, the CuNW/PU conductor could remain a low sheet resistance even after 1000 cycles of stretching/releasing under 10% strain. Two flexible electronic devices, wearable sensor and glove-shaped heater, were fabricated using the stretchable CuNW/PU conductor, demonstrating that our CuNW/PU conductor could be integrated into various wearable electronic devices for applications in food, clothes, and medical supplies fields.

Exact Thermal Transport Properties of Gray-Arsenic using Electon-Phonon Coupling

NASA Astrophysics Data System (ADS)

Kang, Seoung-Hun; Kwon, Young-Kyun

Using various theoretical methods, we investigate the thermoelectric property of gray arsenic. Thermoelectric devices that utilize the Seebeck effect convert heat flow into electrical energy. The conversion efficiency of such a device is determined by its figure of merit or ZT value, which is related to various transport coefficients, such as Seebeck coefficient and the ratio of its electrical conductivity to its thermal counterpart for given temperature. To calculate various transport coefficients and thus the ZT values of gray arsenic, we apply the Boltzmann transport theory to its electronic and phononic structures obtained by density functional theory and density functional perturbation theory together with maximally locallized Wannier functions. During this procedure, we evaluate its relaxation time accurately by explicitly considering electron-phonon coupling. Our result reveals that gray arsenic may be used for a good p-type thermoelectric devices.

Highly Stretchable and Transparent Supercapacitor by Ag-Au Core-Shell Nanowire Network with High Electrochemical Stability.

PubMed

Lee, Habeom; Hong, Sukjoon; Lee, Jinhwan; Suh, Young Duk; Kwon, Jinhyeong; Moon, Hyunjin; Kim, Hyeonseok; Yeo, Junyeob; Ko, Seung Hwan

2016-06-22

Stretchable and transparent electronics have steadily attracted huge attention in wearable devices. Although Ag nanowire is the one of the most promising candidates for transparent and stretchable electronics, its electrochemical instability has forbidden its application to the development of electrochemical energy devices such as supercapacitors. Here, we introduce a highly stretchable and transparent supercapacitor based on electrochemically stable Ag-Au core-shell nanowire percolation network electrode. We developed a simple solution process to synthesize the Ag-Au core-shell nanowire with excellent electrical conductivity as well as greatly enhanced chemical and electrochemical stabilities compared to pristine Ag nanowire. The proposed core-shell nanowire-based supercapacitor still possesses fine optical transmittance and outstanding mechanical stability up to 60% strain. The Ag-Au core-shell nanowire can be a strong candidate for future wearable electrochemical energy devices.

Multi-Dimensional Sensors and Sensing Systems

NASA Technical Reports Server (NTRS)

Stetter, Joseph R. (Inventor); Shirke, Amol G. (Inventor)

2014-01-01

A universal microelectromechanical (MEMS) nano-sensor platform having a substrate and conductive layer deposited in a pattern on the surface to make several devices at the same time, a patterned insulation layer, wherein the insulation layer is configured to expose one or more portions of the conductive layer, and one or more functionalization layers deposited on the exposed portions of the conductive layer to make multiple sensing capability on a single MEMS fabricated device. The functionalization layers are adapted to provide one or more transducer sensor classes selected from the group consisting of: radiant, electrochemical, electronic, mechanical, magnetic, and thermal sensors for chemical and physical variables and producing more than one type of sensor for one or more significant parameters that need to be monitored.

Room Temperature Electrochemical Sintering of Zn Microparticles and Its Use in Printable Conducting Inks for Bioresorbable Electronics.

PubMed

Lee, Yoon Kyeung; Kim, Jeonghyun; Kim, Yerim; Kwak, Jean Won; Yoon, Younghee; Rogers, John A

2017-10-01

This study describes a conductive ink formulation that exploits electrochemical sintering of Zn microparticles in aqueous solutions at room temperature. This material system has relevance to emerging classes of biologically and environmentally degradable electronic devices. The sintering process involves dissolution of a surface passivation layer of zinc oxide in CH 3 COOH/H 2 O and subsequent self-exchange of Zn and Zn 2+ at the Zn/H 2 O interface. The chemical specificity associated with the Zn metal and the CH 3 COOH/H 2 O solution is critically important, as revealed by studies of other material combinations. The resulting electrochemistry establishes the basis for a remarkably simple procedure for printing highly conductive (3 × 10 5 S m -1 ) features in degradable materials at ambient conditions over large areas, with key advantages over strategies based on liquid phase (fusion) sintering that requires both oxide-free metal surfaces and high temperature conditions. Demonstrations include printed magnetic loop antennas for near-field communication devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Skin-like pressure and strain sensors based on transparent elastic films of carbon nanotubes.

PubMed

Lipomi, Darren J; Vosgueritchian, Michael; Tee, Benjamin C-K; Hellstrom, Sondra L; Lee, Jennifer A; Fox, Courtney H; Bao, Zhenan

2011-10-23

Transparent, elastic conductors are essential components of electronic and optoelectronic devices that facilitate human interaction and biofeedback, such as interactive electronics, implantable medical devices and robotic systems with human-like sensing capabilities. The availability of conducting thin films with these properties could lead to the development of skin-like sensors that stretch reversibly, sense pressure (not just touch), bend into hairpin turns, integrate with collapsible, stretchable and mechanically robust displays and solar cells, and also wrap around non-planar and biological surfaces such as skin and organs, without wrinkling. We report transparent, conducting spray-deposited films of single-walled carbon nanotubes that can be rendered stretchable by applying strain along each axis, and then releasing this strain. This process produces spring-like structures in the nanotubes that accommodate strains of up to 150% and demonstrate conductivities as high as 2,200 S cm(-1) in the stretched state. We also use the nanotube films as electrodes in arrays of transparent, stretchable capacitors, which behave as pressure and strain sensors.

Spin transport properties of n-polyacene molecules (n = 1–15) connected to Ni surface electrodes: Theoretical analysis

PubMed Central

Caliskan, S.; Laref, A.

2014-01-01

Using non-equilibrium Green function formalism in conjunction with density functional theory, we explore the spin-polarized transport characteristics of several planar n-acene molecules suspended between two semi-infinite Ni electrodes via the thiol group. We examine the spin-dependence transport on Ni-n-acenes-Ni junctions, while the number of fused benzene rings varies between 1 and 15. Intriguingly, the induced magnetic moments of small acene molecules are higher than that of longer acene rings. The augmentation of fused benzene rings affects both the magnetic and transport features, such as the transmission function and conductance owing to their coupling to the Ni surface contacts via the anchoring group. The interplay between the spin-polarized transport properties, structural configuration and molecular electronic is a fortiori essential in these attractive molecular devices. Thus, this can conduct to the engineering of the electron spin transport in atomistic and molecular junctions. These prominent molecules convincingly infer that the molecular spin valves can conduct to thriving molecular devices. PMID:25482076

Three-terminal graphene negative differential resistance devices.

PubMed

Wu, Yanqing; Farmer, Damon B; Zhu, Wenjuan; Han, Shu-Jen; Dimitrakopoulos, Christos D; Bol, Ageeth A; Avouris, Phaedon; Lin, Yu-Ming

2012-03-27

A new mechanism for negative differential resistance (NDR) is discovered in three-terminal graphene devices based on a field-effect transistor configuration. This NDR effect is a universal phenomenon for graphene and is demonstrated in devices fabricated with different types of graphene materials and gate dielectrics. Operation of conventional NDR devices is usually based on quantum tunneling or intervalley carrier transfer, whereas the NDR behavior observed here is unique to the ambipolar behavior of zero-bandgap graphene and is associated with the competition between electron and hole conduction as the drain bias increases. These three terminal graphene NDR devices offer more operation flexibility than conventional two-terminal devices based on tunnel diodes, Gunn diodes, or molecular devices, and open up new opportunities for graphene in microwave to terahertz applications. © 2012 American Chemical Society

Bio-fabrication of nanomesh channels of single-walled carbon nanotubes for locally gated field-effect transistors

NASA Astrophysics Data System (ADS)

Byeon, Hye-Hyeon; Lee, Woo Chul; Kim, Wonbin; Kim, Seong Keun; Kim, Woong; Yi, Hyunjung

2017-01-01

Single-walled carbon nanotubes (SWNTs) are one of the promising electronic components for nanoscale electronic devices such as field-effect transistors (FETs) owing to their excellent device characteristics such as high conductivity, high carrier mobility and mechanical flexibility. Localized gating gemometry of FETs enables individual addressing of active channels and allows for better electrostatics via thinner dielectric layer of high k-value. For localized gating of SWNTs, it becomes critical to define SWNTs of controlled nanostructures and functionality onto desired locations in high precision. Here, we demonstrate that a biologically templated approach in combination of microfabrication processes can successfully produce a nanostructured channels of SWNTs for localized active devices such as local bottom-gated FETs. A large-scale nanostructured network, nanomesh, of SWNTs were assembled in solution using an M13 phage with strong binding affinity toward SWNTs and micrometer-scale nanomesh channels were defined using negative photolithography and plasma-etching processes. The bio-fabrication approach produced local bottom-gated FETs with remarkably controllable nanostructures and successfully enabled semiconducting behavior out of unsorted SWNTs. In addition, the localized gating scheme enhanced the device performances such as operation voltage and I on/I off ratio. We believe that our approach provides a useful and integrative method for fabricating electronic devices out of nanoscale electronic materials for applications in which tunable electrical properties, mechanical flexibility, ambient stability, and chemical stability are of crucial importance.

Inorganic proton conducting electrolyte coupled oxide-based dendritic transistors for synaptic electronics.

PubMed

Wan, Chang Jin; Zhu, Li Qiang; Zhou, Ju Mei; Shi, Yi; Wan, Qing

2014-05-07

Ionic/electronic hybrid devices with synaptic functions are considered to be the essential building blocks for neuromorphic systems and brain-inspired computing. Here, artificial synapses based on indium-zinc-oxide (IZO) transistors gated by nanogranular SiO2 proton-conducting electrolyte films are fabricated on glass substrates. Spike-timing dependent plasticity and paired-pulse facilitation are successfully mimicked in an individual bottom-gate transistor. Most importantly, dynamic logic and dendritic integration established by spatiotemporally correlated spikes are also mimicked in dendritic transistors with two in-plane gates as the presynaptic input terminals.

Real-time detection of deoxyribonucleic acid bases via their negative differential conductance signature.

PubMed

Dragoman, D; Dragoman, M

2009-08-01

In this Brief Report, we present a method for the real-time detection of the bases of the deoxyribonucleic acid using their signatures in negative differential conductance measurements. The present methods of electronic detection of deoxyribonucleic acid bases are based on a statistical analysis because the electrical currents of the four bases are weak and do not differ significantly from one base to another. In contrast, we analyze a device that combines the accumulated knowledge in nanopore and scanning tunneling detection and which is able to provide very distinctive electronic signatures for the four bases.

Multifunctional Nanostructured Conductive Polymer Gels: Synthesis, Properties, and Applications

DOE PAGES

Zhao, Fei; Shi, Ye; Pan, Lijia; ...

2017-06-26

Conductive polymers have attracted significant interest over the past few decades because they synergize the advantageous features of conventional polymeric materials and organic conductors. With rationally designed nanostructures, conductive polymers can further exhibit exceptional mechanical, electrical, and optical properties because of their confined dimensions at the nanoscale level. Among various nanostructured conductive polymers, conductive polymer gels (CPGs) with synthetically tunable hierarchical 3D network structures show great potential for a wide range of applications, such as bioelectronics, and energy storage/conversion devices owing to their structural features. CPGs retain the properties of nanosized conductive polymers during the assembly of the nanobuilding blocksmore » into a monolithic macroscopic structure while generating structure-derived features from the highly cross-linked network. In this Account, we review our recent progress on the synthesis, properties, and novel applications of dopant cross-linked CPGs. We first describe the synthetic strategies, in which molecules with multiple functional groups are adopted as cross-linkers to cross-link conductive polymer chains into a 3D molecular network. These cross-linking molecules also act as dopants to improve the electrical conductivity of the gel network. The microstructure and physical/chemical properties of CPGs can be tuned by controlling the synthetic conditions such as species of monomers and cross-linkers, reaction temperature, and solvents. By incorporating other functional polymers or particles into the CPG matrix, hybrid gels have been synthesized with tailored structures. These hybrid gel materials retain the functionalities from each component, as well as enable synergic effects to improve mechanical and electrical properties of CPGs. We then introduce the unique structure-derived properties of the CPGs. The network facilitates both electronic and ionic transport owing to the continuous pathways for electrons and hierarchical pores for ion diffusion. CPGs also provide high surface area and solvent compatibility, similar to natural gels. With these improved properties, CPGs have been explored to enable novel conceptual devices in diverse applications from smart electronics and ultrasensitive biosensors, to energy storage and conversion devices. CPGs have also been adopted for developing hybrid materials with multifunctionalities, such as stimuli responsiveness, self-healing properties, and super-repellency to liquid. With synthetically tunable physical/chemical properties, CPGs emerge as a unique material platform to develop novel multifunctional materials that have the potential to impact electronics, energy, and environmental technologies. Our hope is that this Account promotes further efforts toward synthetic control, fundamental investigation, and application exploration of CPGs.« less

Multifunctional Nanostructured Conductive Polymer Gels: Synthesis, Properties, and Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Fei; Shi, Ye; Pan, Lijia

Conductive polymers have attracted significant interest over the past few decades because they synergize the advantageous features of conventional polymeric materials and organic conductors. With rationally designed nanostructures, conductive polymers can further exhibit exceptional mechanical, electrical, and optical properties because of their confined dimensions at the nanoscale level. Among various nanostructured conductive polymers, conductive polymer gels (CPGs) with synthetically tunable hierarchical 3D network structures show great potential for a wide range of applications, such as bioelectronics, and energy storage/conversion devices owing to their structural features. CPGs retain the properties of nanosized conductive polymers during the assembly of the nanobuilding blocksmore » into a monolithic macroscopic structure while generating structure-derived features from the highly cross-linked network. In this Account, we review our recent progress on the synthesis, properties, and novel applications of dopant cross-linked CPGs. We first describe the synthetic strategies, in which molecules with multiple functional groups are adopted as cross-linkers to cross-link conductive polymer chains into a 3D molecular network. These cross-linking molecules also act as dopants to improve the electrical conductivity of the gel network. The microstructure and physical/chemical properties of CPGs can be tuned by controlling the synthetic conditions such as species of monomers and cross-linkers, reaction temperature, and solvents. By incorporating other functional polymers or particles into the CPG matrix, hybrid gels have been synthesized with tailored structures. These hybrid gel materials retain the functionalities from each component, as well as enable synergic effects to improve mechanical and electrical properties of CPGs. We then introduce the unique structure-derived properties of the CPGs. The network facilitates both electronic and ionic transport owing to the continuous pathways for electrons and hierarchical pores for ion diffusion. CPGs also provide high surface area and solvent compatibility, similar to natural gels. With these improved properties, CPGs have been explored to enable novel conceptual devices in diverse applications from smart electronics and ultrasensitive biosensors, to energy storage and conversion devices. CPGs have also been adopted for developing hybrid materials with multifunctionalities, such as stimuli responsiveness, self-healing properties, and super-repellency to liquid. With synthetically tunable physical/chemical properties, CPGs emerge as a unique material platform to develop novel multifunctional materials that have the potential to impact electronics, energy, and environmental technologies. Our hope is that this Account promotes further efforts toward synthetic control, fundamental investigation, and application exploration of CPGs.« less

Multifunctional Nanostructured Conductive Polymer Gels: Synthesis, Properties, and Applications.

PubMed

Zhao, Fei; Shi, Ye; Pan, Lijia; Yu, Guihua

2017-07-18

Conductive polymers have attracted significant interest over the past few decades because they synergize the advantageous features of conventional polymeric materials and organic conductors. With rationally designed nanostructures, conductive polymers can further exhibit exceptional mechanical, electrical, and optical properties because of their confined dimensions at the nanoscale level. Among various nanostructured conductive polymers, conductive polymer gels (CPGs) with synthetically tunable hierarchical 3D network structures show great potential for a wide range of applications, such as bioelectronics, and energy storage/conversion devices owing to their structural features. CPGs retain the properties of nanosized conductive polymers during the assembly of the nanobuilding blocks into a monolithic macroscopic structure while generating structure-derived features from the highly cross-linked network. In this Account, we review our recent progress on the synthesis, properties, and novel applications of dopant cross-linked CPGs. We first describe the synthetic strategies, in which molecules with multiple functional groups are adopted as cross-linkers to cross-link conductive polymer chains into a 3D molecular network. These cross-linking molecules also act as dopants to improve the electrical conductivity of the gel network. The microstructure and physical/chemical properties of CPGs can be tuned by controlling the synthetic conditions such as species of monomers and cross-linkers, reaction temperature, and solvents. By incorporating other functional polymers or particles into the CPG matrix, hybrid gels have been synthesized with tailored structures. These hybrid gel materials retain the functionalities from each component, as well as enable synergic effects to improve mechanical and electrical properties of CPGs. We then introduce the unique structure-derived properties of the CPGs. The network facilitates both electronic and ionic transport owing to the continuous pathways for electrons and hierarchical pores for ion diffusion. CPGs also provide high surface area and solvent compatibility, similar to natural gels. With these improved properties, CPGs have been explored to enable novel conceptual devices in diverse applications from smart electronics and ultrasensitive biosensors, to energy storage and conversion devices. CPGs have also been adopted for developing hybrid materials with multifunctionalities, such as stimuli responsiveness, self-healing properties, and super-repellency to liquid. With synthetically tunable physical/chemical properties, CPGs emerge as a unique material platform to develop novel multifunctional materials that have the potential to impact electronics, energy, and environmental technologies. We hope that this Account promotes further efforts toward synthetic control, fundamental investigation, and application exploration of CPGs.

Extremely high frequency RF effects on electronics.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Loubriel, Guillermo Manuel; Vigliano, David; Coleman, Phillip Dale

The objective of this work was to understand the fundamental physics of extremely high frequency RF effects on electronics. To accomplish this objective, we produced models, conducted simulations, and performed measurements to identify the mechanisms of effects as frequency increases into the millimeter-wave regime. Our purpose was to answer the questions, 'What are the tradeoffs between coupling, transmission losses, and device responses as frequency increases?', and, 'How high in frequency do effects on electronic systems continue to occur?' Using full wave electromagnetics codes and a transmission-line/circuit code, we investigated how extremely high-frequency RF propagates on wires and printed circuit boardmore » traces. We investigated both field-to-wire coupling and direct illumination of printed circuit boards to determine the significant mechanisms for inducing currents at device terminals. We measured coupling to wires and attenuation along wires for comparison to the simulations, looking at plane-wave coupling as it launches modes onto single and multiconductor structures. We simulated the response of discrete and integrated circuit semiconductor devices to those high-frequency currents and voltages, using SGFramework, the open-source General-purpose Semiconductor Simulator (gss), and Sandia's Charon semiconductor device physics codes. This report documents our findings.« less

Conjugated Polymer for Voltage-Controlled Release of Molecules.

PubMed

Liu, Shenghua; Fu, Ying; Li, Guijun; Li, Li; Law, Helen Ka-Wai; Chen, Xianfeng; Yan, Feng

2017-09-01

Conjugated polymers are attractive in numerous biological applications because they are flexible, biocompatible, cost-effective, solution-processable, and electronic/ionic conductive. One interesting application is for controllable drug release, and this has been realized previously using organic electronic ion pumps. However, organic electronic ion pumps show high operating voltages and limited transportation efficiency. Here, the first report of low-voltage-controlled molecular release with a novel organic device based on a conjugated polymer poly(3-hexylthiophene) is presented. The releasing rate of molecules can be accurately controlled by the duration of the voltage applied on the device. The use of a handy mobile phone to remotely control the releasing process and its application in delivering an anticancer drug to treat cancer cells are also successfully demonstrated. The working mechanism of the device is attributed to the unique switchable permeability of poly(3-hexylthiophene) in aqueous solutions under a bias voltage that can tune the wettability of poly(3-hexylthiophene) via oxidation or reduction processes. The organic devices are expected to find many promising applications for controllable drug delivery in biological systems. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Solution-processed flexible NiO resistive random access memory device

NASA Astrophysics Data System (ADS)

Kim, Soo-Jung; Lee, Heon; Hong, Sung-Hoon

2018-04-01

Non-volatile memories (NVMs) using nanocrystals (NCs) as active materials can be applied to soft electronic devices requiring a low-temperature process because NCs do not require a heat treatment process for crystallization. In addition, memory devices can be implemented simply by using a patterning technique using a solution process. In this study, a flexible NiO ReRAM device was fabricated using a simple NC patterning method that controls the capillary force and dewetting of a NiO NC solution at low temperature. The switching behavior of a NiO NC based memory was clearly observed by conductive atomic force microscopy (c-AFM).

Carbon nanotubes and graphene towards soft electronics

NASA Astrophysics Data System (ADS)

Chae, Sang Hoon; Lee, Young Hee

2014-04-01

Although silicon technology has been the main driving force for miniaturizing device dimensions to improve cost and performance, the current application of Si to soft electronics (flexible and stretchable electronics) is limited due to material rigidity. As a result, various prospective materials have been proposed to overcome the rigidity of conventional Si technology. In particular, nano-carbon materials such as carbon nanotubes (CNTs) and graphene are promising due to outstanding elastic properties as well as an excellent combination of electronic, optoelectronic, and thermal properties compared to conventional rigid silicon. The uniqueness of these nano-carbon materials has opened new possibilities for soft electronics, which is another technological trend in the market. This review covers the recent progress of soft electronics research based on CNTs and graphene. We discuss the strategies for soft electronics with nano-carbon materials and their preparation methods (growth and transfer techniques) to devices as well as the electrical characteristics of transparent conducting films (transparency and sheet resistance) and device performances in field effect transistor (FET) (structure, carrier type, on/off ratio, and mobility). In addition to discussing state of the art performance metrics, we also attempt to clarify trade-off issues and methods to control the trade-off on/off versus mobility). We further demonstrate accomplishments of the CNT network in flexible integrated circuits on plastic substrates that have attractive characteristics. A future research direction is also proposed to overcome current technological obstacles necessary to realize commercially feasible soft electronics.

Carbon nanotubes and graphene towards soft electronics.

PubMed

Chae, Sang Hoon; Lee, Young Hee

2014-01-01

Although silicon technology has been the main driving force for miniaturizing device dimensions to improve cost and performance, the current application of Si to soft electronics (flexible and stretchable electronics) is limited due to material rigidity. As a result, various prospective materials have been proposed to overcome the rigidity of conventional Si technology. In particular, nano-carbon materials such as carbon nanotubes (CNTs) and graphene are promising due to outstanding elastic properties as well as an excellent combination of electronic, optoelectronic, and thermal properties compared to conventional rigid silicon. The uniqueness of these nano-carbon materials has opened new possibilities for soft electronics, which is another technological trend in the market. This review covers the recent progress of soft electronics research based on CNTs and graphene. We discuss the strategies for soft electronics with nano-carbon materials and their preparation methods (growth and transfer techniques) to devices as well as the electrical characteristics of transparent conducting films (transparency and sheet resistance) and device performances in field effect transistor (FET) (structure, carrier type, on/off ratio, and mobility). In addition to discussing state of the art performance metrics, we also attempt to clarify trade-off issues and methods to control the trade-off on/off versus mobility). We further demonstrate accomplishments of the CNT network in flexible integrated circuits on plastic substrates that have attractive characteristics. A future research direction is also proposed to overcome current technological obstacles necessary to realize commercially feasible soft electronics.

Structures and fabrication techniques for solid state electrochemical devices

DOEpatents

Visco, Steven J.; Jacobson, Craig P.; DeJonghe, Lutgard C.

2012-10-09

Porous substrates and associated structures for solid-state electrochemical devices, such as solid-oxide fuel cells (SOFCs), are low-cost, mechanically strong and highly electronically conductive. Some preferred structures have a thin layer of an electrocatalytically active material (e.g., Ni--YSZ) coating a porous high-strength alloy support (e.g., SS-430) to form a porous SOFC fuel electrode. Electrode/electrolyte structures can be formed by co-firing or constrained sintering processes.

Structures and fabrication techniques for solid state electrochemical devices

DOEpatents

Visco, Steven J.; Jacobson, Craig P.; DeJonghe, Lutgard C.

2008-04-01

Porous substrates and associated structures for solid-state electrochemical devices, such as solid-oxide fuel cells (SOFCs), are low-cost, mechanically strong and highly electronically conductive. Some preferred structures have a thin layer of an electrocatalytically active material (e.g., Ni--YSZ) coating a porous high-strength alloy support (e.g., SS-430) to form a porous SOFC fuel electrode. Electrode/electrolyte structures can be formed by co-firing or constrained sintering processes.

Self-assembled nanogaps for molecular electronics.

PubMed

Tang, Qingxin; Tong, Yanhong; Jain, Titoo; Hassenkam, Tue; Wan, Qing; Moth-Poulsen, Kasper; Bjørnholm, Thomas

2009-06-17

A nanogap for molecular devices was realized using solution-based self-assembly. Gold nanorods were assembled to gold nanoparticle-coated conducting SnO2:Sb nanowires via thiol end-capped oligo(phenylenevinylene)s (OPVs). The molecular gap was easily created by the rigid molecule itself during self-assembly and the gap length was determined by the molecule length. The gold nanorods and gold nanoparticles, respectively covalently bonded at the two ends of the molecule, had very small dimensions, e.g. a width of approximately 20 nm, and hence were expected to minimize the screening effect. The ultra-long conducting SnO2:Sb nanowires provided the bridge to connect one of the electrodes of the molecular device (gold nanoparticle) to the external circuit. The tip of the atomic force microscope (AFM) was contacted onto the other electrode (gold nanorod) for the electrical measurement of the OPV device. The conductance measurement confirmed that the self-assembly of the molecules and the subsequent self-assembly of the gold nanorods was a feasible method for the fabrication of the nanogap of the molecular devices.

Stabilizing a graphene platform toward discrete components

NASA Astrophysics Data System (ADS)

Mzali, Sana; Montanaro, Alberto; Xavier, Stéphane; Servet, Bernard; Mazellier, Jean-Paul; Bezencenet, Odile; Legagneux, Pierre; Piquemal-Banci, Maëlis; Galceran, Regina; Dlubak, Bruno; Seneor, Pierre; Martin, Marie-Blandine; Hofmann, Stephan; Robertson, John; Cojocaru, Costel-Sorin; Centeno, Alba; Zurutuza, Amaia

2016-12-01

We report on statistical analysis and consistency of electrical performances of devices based on a large scale passivated graphene platform. More than 500 graphene field effect transistors (GFETs) based on graphene grown by chemical vapor deposition and transferred on 4 in. SiO2/Si substrates were fabricated and tested. We characterized the potential of a two-step encapsulation process including an Al2O3 protection layer to avoid graphene contamination during the lithographic process followed by a final Al2O3 passivation layer subsequent to the GFET fabrication. Devices were investigated for occurrence and reproducibility of conductance minimum related to the Dirac point. While no conductance minimum was observed in unpassivated devices, 75% of the passivated transistors exhibited a clear conductance minimum and low hysteresis. The maximum of the device number distribution corresponds to a residual doping below 5 × 1011 cm-2 (0.023 V/nm). This yield shows that GFETs integrating low-doped graphene and exhibiting small hysteresis in the transfer characteristics can be envisaged for discrete components, with even further potential for low power driven electronics.

Modeling of the multilevel conduction characteristics and fatigue profile of Ag/La1/3Ca2/3MnO3/Pt structures using a compact memristive approach

NASA Astrophysics Data System (ADS)

Miranda, E.; Román Acevedo, W.; Rubi, D.; Lüders, U.; Granell, P.; Suñé, J.; Levy, P.

2017-05-01

The hysteretic conduction characteristics and fatigue profile of La1/3Ca2/3MnO3 (LCMO)-based memristive devices were investigated. The oxide films were grown by pulsed laser deposition (PLD) and sandwiched between Ag and Pt electrodes. The devices exhibit bipolar resistive switching (RS) effect with well-defined intermediate conduction states that arise from partial SET and RESET events. The current-voltage curves are modeled and simulated using a compact memristive approach. Two equations are considered: one for the electron transport based on the double-diode equation and the other for the memory state of the device driven by the play operator with logistic ridge functions. An expression that accounts for the remnant resistance of the device is obtained after simplifying the model equations in the low-voltage limit. The role played by the power dissipation in the LCMO reset dynamics as well as the asymmetrical reduction of the resistance window caused by long trains of switching pulses are discussed.

Carbon Nanotube Based Molecular Electronics

NASA Technical Reports Server (NTRS)

Srivastava, Deepak; Saini, Subhash; Menon, Madhu

1998-01-01

Carbon nanotubes and the nanotube heterojunctions have recently emerged as excellent candidates for nanoscale molecular electronic device components. Experimental measurements on the conductivity, rectifying behavior and conductivity-chirality correlation have also been made. While quasi-one dimensional simple heterojunctions between nanotubes with different electronic behavior can be generated by introduction of a pair of heptagon-pentagon defects in an otherwise all hexagon graphene sheet. Other complex 3- and 4-point junctions may require other mechanisms. Structural stability as well as local electronic density of states of various nanotube junctions are investigated using a generalized tight-binding molecular dynamics (GDBMD) scheme that incorporates non-orthogonality of the orbitals. The junctions investigated include straight and small angle heterojunctions of various chiralities and diameters; as well as more complex 'T' and 'Y' junctions which do not always obey the usual pentagon-heptagon pair rule. The study of local density of states (LDOS) reveal many interesting features, most prominent among them being the defect-induced states in the gap. The proposed three and four pointjunctions are one of the smallest possible tunnel junctions made entirely of carbon atoms. Furthermore the electronic behavior of the nanotube based device components can be taylored by doping with group III-V elements such as B and N, and BN nanotubes as a wide band gap semiconductor has also been realized in experiments. Structural properties of heteroatomic nanotubes comprising C, B and N will be discussed.

Studies on possibilities of polymer composites with conductive nanomaterials application in wearable electronics

NASA Astrophysics Data System (ADS)

Gralczyk, Kinga; Janczak, D.; Dybowska-Sarapuk, Ł.; Lepak, S.; Wróblewski, G.; Jakubowska, M.

2017-08-01

In the last few years there has been a growing interest in wearable electronic products, which are generating considerable interest especially in sport and medical industries. But rigid electronics is not comfortable to wear, so things like stretchable substrates, interconnects and electronic devices might help. Flexible electronics could adjust to the curves of a human body and allow the users to move freely. The objective of this paper is to study possibilities of polymer composites with conductive nanomaterials application in wearable electronics. Pastes with graphene, silver nanoplates and carbon nanotubes were manufactured and then interconnects were screen-printed on the surfaces of polyethylene terephthalate (PET) and fabric. Afterwards, the resistance and mechanical properties of samples were examined, also after washing them in a washing machine. It has been found that the best material for the conductive phase is silver. Traces printed directly on the fabric using conductive composites with one functional phase (silver nanoplates or graphene or carbon nanotubes) are too fragile to use them as a common solution in wearable electronics. Mechanical properties can be improved not only by adding carbon nanotubes or graphene to the silver paste, but also by printing additional layer of graphene paste or carbon nanotube paste onto silver layer. In fact, these solutions are not sufficient enough to solve a problem of using these composites in wearable electronics.

Outlook and emerging semiconducting materials for ambipolar transistors.

PubMed

Bisri, Satria Zulkarnaen; Piliego, Claudia; Gao, Jia; Loi, Maria Antonietta

2014-02-26

Ambipolar or bipolar transistors are transistors in which both holes and electrons are mobile inside the conducting channel. This device allows switching among several states: the hole-dominated on-state, the off-state, and the electron-dominated on-state. In the past year, it has attracted great interest in exotic semiconductors, such as organic semiconductors, nanostructured materials, and carbon nanotubes. The ability to utilize both holes and electrons inside one device opens new possibilities for the development of more compact complementary metal-oxide semiconductor (CMOS) circuits, and new kinds of optoelectronic device, namely, ambipolar light-emitting transistors. This progress report highlights the recent progresses in the field of ambipolar transistors, both from the fundamental physics and application viewpoints. Attention is devoted to the challenges that should be faced for the realization of ambipolar transistors with different material systems, beginning with the understanding of the importance of interface modification, which heavily affects injections and trapping of both holes and electrons. The recent development of advanced gating applications, including ionic liquid gating, that open up more possibility to realize ambipolar transport in materials in which one type of charge carrier is highly dominant is highlighted. Between the possible applications of ambipolar field-effect transistors, we focus on ambipolar light-emitting transistors. We put this new device in the framework of its prospective for general lightings, embedded displays, current-driven laser, as well as for photonics-electronics interconnection. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Dynamic modulation of electronic properties of graphene by localized carbon doping using focused electron beam induced deposition

NASA Astrophysics Data System (ADS)

Kim, S.; Russell, M.; Henry, M.; Kim, S. S.; Naik, R. R.; Voevodin, A. A.; Jang, S. S.; Tsukruk, V. V.; Fedorov, A. G.

2015-09-01

We report on the first demonstration of controllable carbon doping of graphene to engineer local electronic properties of a graphene conduction channel using focused electron beam induced deposition (FEBID). Electrical measurements indicate that an ``n-p-n'' junction on graphene conduction channel is formed by partial carbon deposition near the source and drain metal contacts by low energy (<50 eV) secondary electrons due to inelastic collisions of long range backscattered primary electrons generated from a low dose of high energy (25 keV) electron beam (1 × 1018 e- per cm2). Detailed AFM imaging provides direct evidence of the new mechanism responsible for dynamic evolution of the locally varying graphene doping. The FEBID carbon atoms, which are physisorbed and weakly bound to graphene, diffuse towards the middle of graphene conduction channel due to their surface chemical potential gradient, resulting in negative shift of Dirac voltage. Increasing a primary electron dose to 1 × 1019 e- per cm2 results in a significant increase of carbon deposition, such that it covers the entire graphene conduction channel at high surface density, leading to n-doping of graphene channel. Collectively, these findings establish a unique capability of FEBID technique to dynamically modulate the doping state of graphene, thus enabling a new route to resist-free, ``direct-write'' functional patterning of graphene-based electronic devices with potential for on-demand re-configurability.We report on the first demonstration of controllable carbon doping of graphene to engineer local electronic properties of a graphene conduction channel using focused electron beam induced deposition (FEBID). Electrical measurements indicate that an ``n-p-n'' junction on graphene conduction channel is formed by partial carbon deposition near the source and drain metal contacts by low energy (<50 eV) secondary electrons due to inelastic collisions of long range backscattered primary electrons generated from a low dose of high energy (25 keV) electron beam (1 × 1018 e- per cm2). Detailed AFM imaging provides direct evidence of the new mechanism responsible for dynamic evolution of the locally varying graphene doping. The FEBID carbon atoms, which are physisorbed and weakly bound to graphene, diffuse towards the middle of graphene conduction channel due to their surface chemical potential gradient, resulting in negative shift of Dirac voltage. Increasing a primary electron dose to 1 × 1019 e- per cm2 results in a significant increase of carbon deposition, such that it covers the entire graphene conduction channel at high surface density, leading to n-doping of graphene channel. Collectively, these findings establish a unique capability of FEBID technique to dynamically modulate the doping state of graphene, thus enabling a new route to resist-free, ``direct-write'' functional patterning of graphene-based electronic devices with potential for on-demand re-configurability. Electronic supplementary information (ESI) available: Optimization of a PMMA-mediated wet transfer method of graphene, transfer characteristics of all the channels, raw data of drain-source current measured by sweeping a backgate voltage and an AFM topography image and cross-sectional profiles of Fig. 4 and the corresponding electrical measurement along with an estimation of carbon diffusion coefficient. See DOI: 10.1039/c5nr04063a

Intrinsically Stretchable and Conductive Textile by a Scalable Process for Elastic Wearable Electronics.

PubMed

Wang, Chunya; Zhang, Mingchao; Xia, Kailun; Gong, Xueqin; Wang, Huimin; Yin, Zhe; Guan, Baolu; Zhang, Yingying

2017-04-19

The prosperous development of stretchable electronics poses a great demand on stretchable conductive materials that could maintain their electrical conductivity under tensile strain. Previously reported strategies to obtain stretchable conductors usually involve complex structure-fabricating processes or utilization of high-cost nanomaterials. It remains a great challenge to produce stretchable and conductive materials via a scalable and cost-effective process. Herein, a large-scalable pyrolysis strategy is developed for the fabrication of intrinsically stretchable and conductive textile in utilizing low-cost and mass-produced weft-knitted textiles as raw materials. Due to the intrinsic stretchability of the weft-knitted structure and the excellent mechanical and electrical properties of the as-obtained carbonized fibers, the obtained flexible and durable textile could sustain tensile strains up to 125% while keeping a stable electrical conductivity (as shown by a Modal-based textile), thus ensuring its applications in elastic electronics. For demonstration purposes, stretchable supercapacitors and wearable thermal-therapy devices that showed stable performance with the loading of tensile strains have been fabricated. Considering the simplicity and large scalability of the process, the low-cost and mass production of the raw materials, and the superior performances of the as-obtained elastic and conductive textile, this strategy would contribute to the development and industrial production of wearable electronics.

Cryogenic on-chip multiplexer for the study of quantum transport in 256 split-gate devices

NASA Astrophysics Data System (ADS)

Al-Taie, H.; Smith, L. W.; Xu, B.; See, P.; Griffiths, J. P.; Beere, H. E.; Jones, G. A. C.; Ritchie, D. A.; Kelly, M. J.; Smith, C. G.

2013-06-01

We present a multiplexing scheme for the measurement of large numbers of mesoscopic devices in cryogenic systems. The multiplexer is used to contact an array of 256 split gates on a GaAs/AlGaAs heterostructure, in which each split gate can be measured individually. The low-temperature conductance of split-gate devices is governed by quantum mechanics, leading to the appearance of conductance plateaux at intervals of 2e2/h. A fabrication-limited yield of 94% is achieved for the array, and a "quantum yield" is also defined, to account for disorder affecting the quantum behaviour of the devices. The quantum yield rose from 55% to 86% after illuminating the sample, explained by the corresponding increase in carrier density and mobility of the two-dimensional electron gas. The multiplexer is a scalable architecture, and can be extended to other forms of mesoscopic devices. It overcomes previous limits on the number of devices that can be fabricated on a single chip due to the number of electrical contacts available, without the need to alter existing experimental set ups.

Cell separator for use in bipolar-stack energy storage devices

DOEpatents

Mayer, Steven T.; Feikert, John H.; Kachmitter, James L.; Pekala, Richard W.

1995-01-01

An improved multi-cell electrochemical energy storage device, such as a battery, fuel cell, or double layer capacitor using a cell separator which allows cells to be stacked and interconnected with low electrical resistance and high reliability while maximizing packaging efficiency. By adding repeating cells, higher voltages can be obtained. The cell separator is formed by applying an organic adhesive on opposing surfaces of adjacent carbon electrodes or surfaces of aerogel electrodes of a pair of adjacent cells prior to or after pyrolysis thereof to form carbon aerogel electrodes. The cell separator is electronically conductive, but ionically isolating, preventing an electrolytic conduction path between adjacent cells in the stack.

Validation of a Portable Low-Power Deep Brain Stimulation Device Through Anxiolytic Effects in a Laboratory Rat Model.

PubMed

Kouzani, Abbas Z; Kale, Rajas P; Zarate-Garza, Pablo Patricio; Berk, Michael; Walder, Ken; Tye, Susannah J

2017-09-01

Deep brain stimulation (DBS) devices deliver electrical pulses to neural tissue through an electrode. To study the mechanisms and therapeutic benefits of deep brain stimulation, murine preclinical research is necessary. However, conducting naturalistic long-term, uninterrupted animal behavioral experiments can be difficult with bench-top systems. The reduction of size, weight, power consumption, and cost of DBS devices can assist the progress of this research in animal studies. A low power, low weight, miniature DBS device is presented in this paper. This device consists of electronic hardware and software components including a low-power microcontroller, an adjustable current source, an n-channel metal-oxide-semiconductor field-effect transistor, a coin-cell battery, electrode wires and a software program to operate the device. Evaluation of the performance of the device in terms of battery lifetime and device functionality through bench and in vivo tests was conducted. The bench test revealed that this device can deliver continuous stimulation current pulses of strength [Formula: see text], width [Formula: see text], and frequency 130 Hz for over 22 days. The in vivo tests demonstrated that chronic stimulation of the nucleus accumbens (NAc) with this device significantly increased psychomotor activity, together with a dramatic reduction in anxiety-like behavior in the elevated zero-maze test.

[Qualitative analysis among electronic cigarette users: practices, use, representations].

PubMed

Fontaine, Astrid; Artigas, Fernanda

2017-01-01

Electronic cigarettes are smokeless devices that simulate the act of tobacco smoking by spraying an ?e-liquid? and diffusing an aerosol that is inhaled by the user. Although the initial enthusiasm observed in 2012-2013 has tended to flag, electronic cigarettes are now part of the landscape of smokers seeking an alternative to smoking and abstinence. Smoking cessation professionals need to meet a growing demand from smokers and must adopt a clear position in relation to this device. The results presented here were derived from a qualitative study conducted with the financial support of the French Directorate of Health, part of the Ministry of Social Affairs and Health from September 2014 to January 2016. The study was based on classical field-work ethnology: observations were made during events involving electronic cigarette users and 25 semi-structured interviews with diverse profiles to clarify a poorly known field. This study contributes to the observation and understanding of an emerging phenomenon, likely to induce a lasting change in our relationship to tobacco. The study revealed a wide variety of profiles among smokers interested by electronic cigarettes. Men and women, young and old, or former smokers, adopt various attitudes when trying this device, and their patterns of use often change over the months following initiation.

Hexagonal MoTe2 with Amorphous BN Passivation Layer for Improved Oxidation Resistance and Endurance of 2D Field Effect Transistors.

PubMed

Sirota, Benjamin; Glavin, Nicholas; Krylyuk, Sergiy; Davydov, Albert V; Voevodin, Andrey A

2018-06-06

Environmental and thermal stability of two-dimensional (2D) transition metal dichalcogenides (TMDs) remains a fundamental challenge towards enabling robust electronic devices. Few-layer 2H-MoTe 2 with an amorphous boron nitride (a-BN) covering layer was synthesized as a channel for back-gated field effect transistors (FET) and compared to uncovered MoTe 2 . A systematic approach was taken to understand the effects of heat treatment in air on the performance of FET devices. Atmospheric oxygen was shown to negatively affect uncoated MoTe 2 devices while BN-covered FETs showed considerably enhanced chemical and electronic characteristic stability. Uncapped MoTe 2 FET devices, which were heated in air for one minute, showed a polarity switch from n- to p-type at 150 °C, while BN-MoTe 2 devices switched only after 200 °C of heat treatment. Time-dependent experiments at 100 °C showed that uncapped MoTe 2 samples exhibited the polarity switch after 15 min of heat treatment while the BN-capped device maintained its n-type conductivity for the maximum 60 min duration of the experiment. X-ray photoelectron spectroscopy (XPS) analysis suggests that oxygen incorporation into MoTe 2 was the primary doping mechanism for the polarity switch. This work demonstrates the effectiveness of an a-BN capping layer in preserving few-layer MoTe 2 material quality and controlling its conductivity type at elevated temperatures in an atmospheric environment.

All Spin Artificial Neural Networks Based on Compound Spintronic Synapse and Neuron.

PubMed

Zhang, Deming; Zeng, Lang; Cao, Kaihua; Wang, Mengxing; Peng, Shouzhong; Zhang, Yue; Zhang, Youguang; Klein, Jacques-Olivier; Wang, Yu; Zhao, Weisheng

2016-08-01

Artificial synaptic devices implemented by emerging post-CMOS non-volatile memory technologies such as Resistive RAM (RRAM) have made great progress recently. However, it is still a big challenge to fabricate stable and controllable multilevel RRAM. Benefitting from the control of electron spin instead of electron charge, spintronic devices, e.g., magnetic tunnel junction (MTJ) as a binary device, have been explored for neuromorphic computing with low power dissipation. In this paper, a compound spintronic device consisting of multiple vertically stacked MTJs is proposed to jointly behave as a synaptic device, termed as compound spintronic synapse (CSS). Based on our theoretical and experimental work, it has been demonstrated that the proposed compound spintronic device can achieve designable and stable multiple resistance states by interfacial and materials engineering of its components. Additionally, a compound spintronic neuron (CSN) circuit based on the proposed compound spintronic device is presented, enabling a multi-step transfer function. Then, an All Spin Artificial Neural Network (ASANN) is constructed with the CSS and CSN circuit. By conducting system-level simulations on the MNIST database for handwritten digital recognition, the performance of such ASANN has been investigated. Moreover, the impact of the resolution of both the CSS and CSN and device variation on the system performance are discussed in this work.

Quantum Dots Based Rad-Hard Computing and Sensors

NASA Technical Reports Server (NTRS)

Fijany, A.; Klimeck, G.; Leon, R.; Qiu, Y.; Toomarian, N.

2001-01-01

Quantum Dots (QDs) are solid-state structures made of semiconductors or metals that confine a small number of electrons into a small space. The confinement of electrons is achieved by the placement of some insulating material(s) around a central, well-conducting region. Thus, they can be viewed as artificial atoms. They therefore represent the ultimate limit of the semiconductor device scaling. Additional information is contained in the original extended abstract.

Nanoscale chemical state analysis of resistance random access memory device reacting with Ti

NASA Astrophysics Data System (ADS)

Shima, Hisashi; Nakano, Takashi; Akinaga, Hiro

2010-05-01

The thermal stability of the resistance random access memory material in the reducing atmosphere at the elevated temperature was improved by the addition of Ti. The unipolar resistance switching before and after the postdeposition annealing (PDA) process at 400 °C was confirmed in Pt/CoO/Ti(5 nm)/Pt device, while the severe degradation of the initial resistance occurs in the Pt/CoO/Pt and Pt/CoO/Ti(50 nm)/Pt devices. By investigating the chemical bonding states of Co, O, and Ti using electron energy loss spectroscopy combined with transmission electron microscopy, it was revealed that excess Ti induces the formation of metallic Co, while the thermal stability was improved by trace Ti. Moreover, it was indicated that the filamentary conduction path can be thermally induced after PDA in the oxide layer by analyzing electrical properties of the degraded devices. The adjustment of the reducing elements is quite essential in order to participate in their profits.

Too Hot for Photon-Assisted Transport: Hot-Electrons Dominate Conductance Enhancement in Illuminated Single-Molecule Junctions.

PubMed

Fung, E-Dean; Adak, Olgun; Lovat, Giacomo; Scarabelli, Diego; Venkataraman, Latha

2017-02-08

We investigate light-induced conductance enhancement in single-molecule junctions via photon-assisted transport and hot-electron transport. Using 4,4'-bipyridine bound to Au electrodes as a prototypical single-molecule junction, we report a 20-40% enhancement in conductance under illumination with 980 nm wavelength radiation. We probe the effects of subtle changes in the transmission function on light-enhanced current and show that discrete variations in the binding geometry result in a 10% change in enhancement. Importantly, we prove theoretically that the steady-state behavior of photon-assisted transport and hot-electron transport is identical but that hot-electron transport is the dominant mechanism for optically induced conductance enhancement in single-molecule junctions when the wavelength used is absorbed by the electrodes and the hot-electron relaxation time is long. We confirm this experimentally by performing polarization-dependent conductance measurements of illuminated 4,4'-bipyridine junctions. Finally, we perform lock-in type measurements of optical current and conclude that currents due to laser-induced thermal expansion mask optical currents. This work provides a robust experimental framework for studying mechanisms of light-enhanced transport in single-molecule junctions and offers tools for tuning the performance of organic optoelectronic devices by analyzing detailed transport properties of the molecules involved.

Lattice constant changes leading to significant changes of the spin-gapless features and physical nature in a inverse Heusler compound Zr2MnGa

NASA Astrophysics Data System (ADS)

Wang, Xiaotian; Cheng, Zhenxiang; Khenata, Rabah; Wu, Yang; Wang, Liying; Liu, Guodong

2017-12-01

The spin-gapless semiconductors with parabolic energy dispersions [1-3] have been recently proposed as a new class of materials for potential applications in spintronic devices. In this work, according to the Slater-Pauling rule, we report the fully-compensated ferrimagnetic (FCF) behavior and spin-gapless semiconducting (SGS) properties for a new inverse Heusler compound Zr2MnGa by means of the plane-wave pseudo-potential method based on density functional theory. With the help of GGA-PBE, the electronic structures and the magnetism of Zr2MnGa compound at its equilibrium and strained lattice constants are systematically studied. The calculated results show that the Zr2MnGa is a new SGS at its equilibrium lattice constant: there is an energy gap between the conduction and valence bands for both the majority and minority electrons, while there is no gap between the majority electrons in the valence band and the minority electrons in the conduction band. Remarkably, not only a diverse physical nature transition, but also different types of spin-gapless features can be observed with the change of the lattice constants. Our calculated results of Zr2MnGa compound indicate that this material has great application potential in spintronic devices.

Thermal performance of ethylene glycol based nanofluids in an electronic heat sink.

PubMed

Selvakumar, P; Suresh, S

2014-03-01

Heat transfer in electronic devices such as micro processors and power converters is much essential to keep these devices cool for the better functioning of the systems. Air cooled heat sinks are not able to remove the high heat flux produced by the today's electronic components. Liquids work better than air in removing heat. Thermal conductivity which is the most essential property of any heat transfer fluid can be enhanced by adding nano scale solid particles which possess higher thermal conductivity than the liquids. In this work the convective heat transfer and pressure drop characteristics of the water/ethylene glycol mixture based nanofluids consisting of Al2O3, CuO nanoparticles with a volume concentration of 0.1% are studied experimentally in a rectangular channel heat sink. The nano particles are characterized using Scanning Electron Microscope and the nannofluids are prepared by using an ultrasonic vibrator and Sodium Lauryl Salt surfactant. The experimental results showed that nanofluids of 0.1% volume concentration give higher convective heat transfer coefficient values than the plain water/ethylene glycol mixture which is prepared in the volume ratio of 70:30. There is no much penalty in the pressure drop values due to the inclusion of nano particles in the water/ethylene glycol mixture.

Free-electron gas at charged domain walls in insulating BaTiO3

PubMed Central

Sluka, Tomas; Tagantsev, Alexander K.; Bednyakov, Petr; Setter, Nava

2013-01-01

Hetero interfaces between metal-oxides display pronounced phenomena such as semiconductor-metal transitions, magnetoresistance, the quantum hall effect and superconductivity. Similar effects at compositionally homogeneous interfaces including ferroic domain walls are expected. Unlike hetero interfaces, domain walls can be created, displaced, annihilated and recreated inside a functioning device. Theory predicts the existence of 'strongly' charged domain walls that break polarization continuity, but are stable and conduct steadily through a quasi-two-dimensional electron gas. Here we show this phenomenon experimentally in charged domain walls of the prototypical ferroelectric BaTiO3. Their steady metallic-type conductivity, 109 times that of the parent matrix, evidence the presence of stable degenerate electron gas, thus adding mobility to functional interfaces. PMID:23651996

Hydrogenated TiO2 Thin Film for Accelerating Electron Transport in Highly Efficient Planar Perovskite Solar Cells.

PubMed

Yao, Xin; Liang, Junhui; Li, Yuelong; Luo, Jingshan; Shi, Biao; Wei, Changchun; Zhang, Dekun; Li, Baozhang; Ding, Yi; Zhao, Ying; Zhang, Xiaodan

2017-10-01

Intensive studies on low-temperature deposited electron transport materials have been performed to improve the efficiency of n-i-p type planar perovskite solar cells to extend their application on plastic and multijunction device architectures. Here, a TiO 2 film with enhanced conductivity and tailored band edge is prepared by magnetron sputtering at room temperature by hydrogen doping (HTO), which accelerates the electron extraction from perovskite photoabsorber and reduces charge transfer resistance, resulting in an improved short circuit current density and fill factor. The HTO film with upward shifted Fermi level guarantees a smaller loss on V OC and facilitates the growth of high-quality absorber with much larger grains and more uniform size, leading to devices with negligible hysteresis. In comparison with the pristine TiO 2 prepared without hydrogen doping, the HTO-based device exhibits a substantial performance enhancement leading to an efficiency of 19.30% and more stabilized photovoltaic performance maintaining 93% of its initial value after 300 min continuous illumination in the glove box. These properties permit the room-temperature magnetron sputtered HTO film as a promising electron transport material for flexible and tandem perovskite solar cell in the future.

Thin-film chemical sensors based on electron tunneling

NASA Technical Reports Server (NTRS)

Khanna, S. K.; Lambe, J.; Leduc, H. G.; Thakoor, A. P.

1985-01-01

The physical mechanisms underlying a novel chemical sensor based on electron tunneling in metal-insulator-metal (MIM) tunnel junctions were studied. Chemical sensors based on electron tunneling were shown to be sensitive to a variety of substances that include iodine, mercury, bismuth, ethylenedibromide, and ethylenedichloride. A sensitivity of 13 parts per billion of iodine dissolved in hexane was demonstrated. The physical mechanisms involved in the chemical sensitivity of these devices were determined to be the chemical alteration of the surface electronic structure of the top metal electrode in the MIM structure. In addition, electroreflectance spectroscopy (ERS) was studied as a complementary surface-sensitive technique. ERS was shown to be sensitive to both iodine and mercury. Electrolyte electroreflectance and solid-state MIM electroreflectance revealed qualitatively the same chemical response. A modified thin-film structure was also studied in which a chemically active layer was introduced at the top Metal-Insulator interface of the MIM devices. Cobalt phthalocyanine was used for the chemically active layer in this study. Devices modified in this way were shown to be sensitive to iodine and nitrogen dioxide. The chemical sensitivity of the modified structure was due to conductance changes in the active layer.

Inelastic transport theory from first principles: Methodology and application to nanoscale devices

NASA Astrophysics Data System (ADS)

Frederiksen, Thomas; Paulsson, Magnus; Brandbyge, Mads; Jauho, Antti-Pekka

2007-05-01

We describe a first-principles method for calculating electronic structure, vibrational modes and frequencies, electron-phonon couplings, and inelastic electron transport properties of an atomic-scale device bridging two metallic contacts under nonequilibrium conditions. The method extends the density-functional codes SIESTA and TRANSIESTA that use atomic basis sets. The inelastic conductance characteristics are calculated using the nonequilibrium Green’s function formalism, and the electron-phonon interaction is addressed with perturbation theory up to the level of the self-consistent Born approximation. While these calculations often are computationally demanding, we show how they can be approximated by a simple and efficient lowest order expansion. Our method also addresses effects of energy dissipation and local heating of the junction via detailed calculations of the power flow. We demonstrate the developed procedures by considering inelastic transport through atomic gold wires of various lengths, thereby extending the results presented in Frederiksen [Phys. Rev. Lett. 93, 256601 (2004)]. To illustrate that the method applies more generally to molecular devices, we also calculate the inelastic current through different hydrocarbon molecules between gold electrodes. Both for the wires and the molecules our theory is in quantitative agreement with experiments, and characterizes the system-specific mode selectivity and local heating.

Probing and Manipulating the Interfacial Defects of InGaAs Dual-Layer Metal Oxides at the Atomic Scale.

PubMed

Wu, Xing; Luo, Chen; Hao, Peng; Sun, Tao; Wang, Runsheng; Wang, Chaolun; Hu, Zhigao; Li, Yawei; Zhang, Jian; Bersuker, Gennadi; Sun, Litao; Pey, Kinleong

2018-01-01

The interface between III-V and metal-oxide-semiconductor materials plays a central role in the operation of high-speed electronic devices, such as transistors and light-emitting diodes. The high-speed property gives the light-emitting diodes a high response speed and low dark current, and they are widely used in communications, infrared remote sensing, optical detection, and other fields. The rational design of high-performance devices requires a detailed understanding of the electronic structure at this interface; however, this understanding remains a challenge, given the complex nature of surface interactions and the dynamic relationship between the morphology evolution and electronic structures. Herein, in situ transmission electron microscopy is used to probe and manipulate the structural and electrical properties of ZrO 2 films on Al 2 O 3 and InGaAs substrate at the atomic scale. Interfacial defects resulting from the spillover of the oxygen-atom conduction-band wavefunctions are resolved. This study unearths the fundamental defect-driven interfacial electric structure of III-V semiconductor materials and paves the way to future high-speed and high-reliability devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Fabrication Approaches to Interconnect Based Devices for Stretchable Electronics: A Review.

PubMed

Nagels, Steven; Deferme, Wim

2018-03-03

Stretchable electronics promise to naturalize the way that we are surrounded by and interact with our devices. Sensors that can stretch and bend furthermore have become increasingly relevant as the technology behind them matures rapidly from lab-based workflows to industrially applicable production principles. Regardless of the specific materials used, creating stretchable conductors involves either the implementation of strain reliefs through insightful geometric patterning, the dispersion of stiff conductive filler in an elastomeric matrix, or the employment of intrinsically stretchable conductive materials. These basic principles however have spawned a myriad of materials systems wherein future application engineers need to find their way. This paper reports a literature study on the spectrum of different approaches towards stretchable electronics, discusses standardization of characteristic tests together with their reports and estimates matureness for industry. Patterned copper foils that are embedded in elastomeric sheets, which are closest to conventional electronic circuits processing, make up one end of the spectrum. Furthest from industry are the more recent circuits based on intrinsically stretchable liquid metals. These show extremely promising results, however, as a technology, liquid metal is not mature enough to be adapted. Printing makes up the transition between both ends, and is also well established on an industrial level, but traditionally not linked to creating electronics. Even though a certain level of maturity was found amongst the approaches that are reviewed herein, industrial adaptation for consumer electronics remains unpredictable without a designated break-through commercial application.

Fabrication Approaches to Interconnect Based Devices for Stretchable Electronics: A Review

PubMed Central

Nagels, Steven

2018-01-01

Stretchable electronics promise to naturalize the way that we are surrounded by and interact with our devices. Sensors that can stretch and bend furthermore have become increasingly relevant as the technology behind them matures rapidly from lab-based workflows to industrially applicable production principles. Regardless of the specific materials used, creating stretchable conductors involves either the implementation of strain reliefs through insightful geometric patterning, the dispersion of stiff conductive filler in an elastomeric matrix, or the employment of intrinsically stretchable conductive materials. These basic principles however have spawned a myriad of materials systems wherein future application engineers need to find their way. This paper reports a literature study on the spectrum of different approaches towards stretchable electronics, discusses standardization of characteristic tests together with their reports and estimates matureness for industry. Patterned copper foils that are embedded in elastomeric sheets, which are closest to conventional electronic circuits processing, make up one end of the spectrum. Furthest from industry are the more recent circuits based on intrinsically stretchable liquid metals. These show extremely promising results, however, as a technology, liquid metal is not mature enough to be adapted. Printing makes up the transition between both ends, and is also well established on an industrial level, but traditionally not linked to creating electronics. Even though a certain level of maturity was found amongst the approaches that are reviewed herein, industrial adaptation for consumer electronics remains unpredictable without a designated break-through commercial application. PMID:29510497

Structural, morphological, dielectric and impedance spectroscopy of lead-free Bi(Zn2/3Ta1/3)O3 electronic material

NASA Astrophysics Data System (ADS)

Halder, S.; Bhuyan, S.; Das, S. N.; Sahoo, S.; Choudhary, R. N. P.; Das, P.; Parida, K.

2017-12-01

A lead-free dielectric material [Bi(Zn2/3Ta1/3)O3] has been prepared using a solid state reaction technique at high-temperature. The resistive, conducting and capacitive characteristics of the prepared electronic material have been studied in different experimental conditions. The determination of basic crystal parameters and reflection indices confirm the development of polycrystalline compound with orthorhombic crystal structure. The study of frequency-temperature dependence of ac conductivity illustrates the nature and conduction mechanism of the material. On the basis of observed impedance data and detailed dielectric analysis, the existence of non-Debye type relaxation has been affirmed. The electronic charge carriers of compound have short range order that has been validated from the complex modulus and impedance spectrum. The detailed studies of resistive, capacitive, microstructural characteristics of the prepared material provide some useful data for considering the material as an electronic component for fabrication of devices.

Printable inorganic nanomaterials for flexible transparent electrodes: from synthesis to application

NASA Astrophysics Data System (ADS)

Wang, Dingrun; Mei, Yongfeng; Huang, Gaoshan

2018-01-01

Printed and flexible electronics are definitely promising cutting-edge electronic technologies of the future. They offer a wide-variety of applications such as flexible circuits, flexible displays, flexible solar cells, skin-like pressure sensors, and radio frequency identification tags in our daily life. As the most-fundamental component of electronics, electrodes are made of conductive materials that play a key role in flexible and printed electronic devices. In this review, various inorganic conductive materials and strategies for obtaining highly conductive and uniform electrodes are demonstrated. Applications of printed electrodes fabricated via these strategies are also described. Nevertheless, there are a number of challenges yet to overcome to optimize the processing and performance of printed electrodes. Project supported by the National Natural Science Foundation of China (Nos. 51475093, U1632115), the Science and Technology Commission of Shanghai Municipality (No. 14JC1400200), the National Key Technologies R&D Program of China (No. 2015ZX02102-003), and the Changjiang Young Scholars Programme of China.

Oxide-based synaptic transistors gated by solution-processed gelatin electrolytes

NASA Astrophysics Data System (ADS)

He, Yinke; Sun, Jia; Qian, Chuan; Kong, Ling-An; Gou, Guangyang; Li, Hongjian

2017-04-01

In human brain, a large number of neurons are connected via synapses. Simulation of the synaptic behaviors using electronic devices is the most important step for neuromorphic systems. In this paper, proton conducting gelatin electrolyte-gated oxide field-effect transistors (FETs) were used for emulating synaptic functions, in which the gate electrode is regarded as pre-synaptic neuron and the channel layer as the post-synaptic neuron. In analogy to the biological synapse, a potential spike can be applied at the gate electrode and trigger ionic motion in the gelatin electrolyte, which in turn generates excitatory post-synaptic current (EPSC) in the channel layer. Basic synaptic behaviors including spike time-dependent EPSC, paired-pulse facilitation (PPF), self-adaptation, and frequency-dependent synaptic transmission were successfully mimicked. Such ionic/electronic hybrid devices are beneficial for synaptic electronics and brain-inspired neuromorphic systems.

Strain-induced tunable negative differential resistance in triangle graphene spirals

NASA Astrophysics Data System (ADS)

Tan, Jie; Zhang, Xiaoming; Liu, Wenguan; He, Xiujie; Zhao, Mingwen

2018-05-01

Using non-equilibrium Green’s function formalism combined with density functional theory calculations, we investigate the significant changes in electronic and transport properties of triangle graphene spirals (TGSs) in response to external strain. Tunable negative differential resistance (NDR) behavior is predicted. The NDR bias region, NDR width, and peak-to-valley ratio can be well tuned by external strain. Further analysis shows that these peculiar properties can be attributed to the dispersion widths of the p z orbitals. Moreover, the conductance of TGSs is very sensitive to the applied stress, which is promising for applications in nanosensor devices. Our findings reveal a novel approach to produce tunable electronic devices based on graphene spirals.

Strain-induced tunable negative differential resistance in triangle graphene spirals.

PubMed

Tan, Jie; Zhang, Xiaoming; Liu, Wenguan; He, Xiujie; Zhao, Mingwen

2018-05-18

Using non-equilibrium Green's function formalism combined with density functional theory calculations, we investigate the significant changes in electronic and transport properties of triangle graphene spirals (TGSs) in response to external strain. Tunable negative differential resistance (NDR) behavior is predicted. The NDR bias region, NDR width, and peak-to-valley ratio can be well tuned by external strain. Further analysis shows that these peculiar properties can be attributed to the dispersion widths of the p z orbitals. Moreover, the conductance of TGSs is very sensitive to the applied stress, which is promising for applications in nanosensor devices. Our findings reveal a novel approach to produce tunable electronic devices based on graphene spirals.

Integration of clinical research documentation in electronic health records.

PubMed

Broach, Debra

2015-04-01

Clinical trials of investigational drugs and devices are often conducted within healthcare facilities concurrently with clinical care. With implementation of electronic health records, new communication methods are required to notify nonresearch clinicians of research participation. This article reviews clinical research source documentation, the electronic health record and the medical record, areas in which the research record and electronic health record overlap, and implications for the research nurse coordinator in documentation of the care of the patient/subject. Incorporation of clinical research documentation in the electronic health record will lead to a more complete patient/subject medical record in compliance with both research and medical records regulations. A literature search provided little information about the inclusion of clinical research documentation within the electronic health record. Although regulations and guidelines define both source documentation and the medical record, integration of research documentation in the electronic health record is not clearly defined. At minimum, the signed informed consent(s), investigational drug or device usage, and research team contact information should be documented within the electronic health record. Institutional policies should define a standardized process for this integration in the absence federal guidance. Nurses coordinating clinical trials are in an ideal position to define this integration.

Transparent conductive carbon nanotubes coated flexible substrate and its application for electronic devices

NASA Astrophysics Data System (ADS)

Rahy, Abdelaziz

The primary goal of this project was to develop a flexible transparent conductor with 100 O/sq with 90% transmittance in the wavelength range of 400-700nm on a flexible substrate. A second objective was to simplify the coating process to be commercially viable. The best result achieved so far was 110 O/sq at 88% transmittance using purified single walled nanotubes (SWNTs) coated on a polyethylene naphthalate (PEN) substrate on both sides. The SWNT sample used was purchased from Carbon Nanotechnologies Inc (CNI). Proper sonication of the single walled nanotubes (SWNTs) with a proper solvent selection with no use of surfactant simplified the overall coating procedure from five steps (prior art method) to three steps utilizing a dip coating method. We also found that the use of metallic SWNTs can significantly improve the conductivity and transmittance compared with the use of mixed SWNTs, i.e., unseparated SWNTs We also studied a possible adhesion mechanism between SWNTs and the surface of PEN; we concluded that pi - pi stacking effect and hydrophobic-to-hydrophobic interaction are the major contributing factors to have CNTs adhere on the surface of the PEN substrate. Working devices of polymer light emitting diodes (PLEDs) and solar cell were successfully fabricated using SWNT coated substrates. A no optimized PLEDs device exhibited low turn-on voltage (˜5V), and the fabricated solar cell functioned. The devices have demonstrated the coated film can be used for potential electronic devices.

Medical Representatives' Intention to Use Information Technology in Pharmaceutical Marketing.

PubMed

Kwak, Eun-Seon; Chang, Hyejung

2016-10-01

Electronic detailing (e-detailing), the use of electronic devices to facilitate sales presentations to physicians, has been adopted and expanded in the pharmaceutical industry. To maximize the potential outcome of e-detailing, it is important to understand medical representatives (MRs)' behavior and attitude to e-detailing. This study investigates how information technology devices such as laptop computers and tablet PCs are utilized in pharmaceutical marketing, and it analyzes the factors influencing MRs' intention to use devices. This study has adopted and modified the theory of Roger's diffusion of innovation model and the technology acceptance model. To test the model empirically, a questionnaire survey was conducted with 221 MRs who were working in three multinational or eleven domestic pharmaceutical companies in Korea. Overall, 28% and 35% of MRs experienced using laptop computers and tablet PCs in pharmaceutical marketing, respectively. However, the rates were different across different groups of MRs, categorized by age, education level, position, and career. The results showed that MRs' intention to use information technology devices was significantly influenced by perceived usefulness in general. Perceived ease of use, organizational and individual innovativeness, and several MR characteristics were also found to have significant impacts. This study provides timely information about e-detailing devices to marketing managers and policy makers in the pharmaceutical industry for successful marketing strategy development by understanding the needs of MRs' intention to use information technology. Further in-depth study should be conducted to understand obstacles and limitations and to improve the strategies for better marketing tools.