Industrial Electronics II for ICT. Student's Manual.

ERIC Educational Resources Information Center

Snider, Bob

This student manual contains the following six units for classroom and laboratory experiences in high school industrial electronics: (1) introduction and review of DC and AC circuits; (2) semiconductors; (3) integrated circuits; (4) digital basics; (5) complex digital circuits; and (6) computer circuits. The units include unit objectives, specific…

77 FR 19032 - Certain Semiconductor Integrated Circuit Devices and Products Containing Same Notice of Receipt...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-03-29

... INTERNATIONAL TRADE COMMISSION [DN 2888] Certain Semiconductor Integrated Circuit Devices and... Integrated Circuit Devices and Products Containing Same, DN 2888; the Commission is soliciting comments on... Commission's electronic docket (EDIS) at http://edis.usitc.gov , and will be available for inspection during...

77 FR 33486 - Certain Integrated Circuit Packages Provided With Multiple Heat-Conducting Paths and Products...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-06-06

... INTERNATIONAL TRADE COMMISSION [Docket No. 2899] Certain Integrated Circuit Packages Provided With... complaint entitled Certain Integrated Circuit Packages Provided With Multiple Heat-Conducting Paths and..., telephone (202) 205-2000. The public version of the complaint can be accessed on the Commission's electronic...

Gallium Arsenide Monolithic Optoelectronic Circuits

NASA Astrophysics Data System (ADS)

Bar-Chaim, N.; Katz, J.; Margalit, S.; Ury, I.; Wilt, D.; Yariv, A.

1981-07-01

The optical properties of GaAs make it a very useful material for the fabrication of optical emitters and detectors. GaAs also possesses electronic properties which allow the fabrication of high speed electronic devices which are superior to conventional silicon devices. Monolithic optoelectronic circuits are formed by the integration of optical and electronic devices on a single GaAs substrate. Integration of many devices is most easily accomplished on a semi-insulating (SI) sub-strate. Several laser structures have been fabricated on SI GaAs substrates. Some of these lasers have been integrated with Gunn diodes and with metal semiconductor field effect transistors (MESFETs). An integrated optical repeater has been demonstrated in which MESFETs are used for optical detection and electronic amplification, and a laser is used to regenerate the optical signal. Monolithic optoelectronic circuits have also been constructed on conducting substrates. A heterojunction bipolar transistor driver has been integrated with a laser on an n-type GaAs substrate.

Differential transimpedance amplifier circuit for correlated differential amplification

DOEpatents

Gresham, Christopher A [Albuquerque, NM; Denton, M Bonner [Tucson, AZ; Sperline, Roger P [Tucson, AZ

2008-07-22

A differential transimpedance amplifier circuit for correlated differential amplification. The amplifier circuit increase electronic signal-to-noise ratios in charge detection circuits designed for the detection of very small quantities of electrical charge and/or very weak electromagnetic waves. A differential, integrating capacitive transimpedance amplifier integrated circuit comprising capacitor feedback loops performs time-correlated subtraction of noise.

Electronic Components Subsystems and Equipment: a Compilation

NASA Technical Reports Server (NTRS)

1975-01-01

Developments in electronic components, subsystems, and equipment are summarized. Topics discussed include integrated circuit components and techniques, circuit components and techniques, and cables and connectors.

Mouldable all-carbon integrated circuits

NASA Astrophysics Data System (ADS)

Sun, Dong-Ming; Timmermans, Marina Y.; Kaskela, Antti; Nasibulin, Albert G.; Kishimoto, Shigeru; Mizutani, Takashi; Kauppinen, Esko I.; Ohno, Yutaka

2013-08-01

A variety of plastic products, ranging from those for daily necessities to electronics products and medical devices, are produced by moulding techniques. The incorporation of electronic circuits into various plastic products is limited by the brittle nature of silicon wafers. Here we report mouldable integrated circuits for the first time. The devices are composed entirely of carbon-based materials, that is, their active channels and passive elements are all fabricated from stretchable and thermostable assemblies of carbon nanotubes, with plastic polymer dielectric layers and substrates. The all-carbon thin-film transistors exhibit a mobility of 1,027cm2V-1s-1 and an ON/OFF ratio of 105. The devices also exhibit extreme biaxial stretchability of up to 18% when subjected to thermopressure forming. We demonstrate functional integrated circuits that can be moulded into a three-dimensional dome. Such mouldable electronics open new possibilities by allowing for the addition of electronic/plastic-like functionalities to plastic/electronic products, improving their designability.

Mouldable all-carbon integrated circuits.

PubMed

Sun, Dong-Ming; Timmermans, Marina Y; Kaskela, Antti; Nasibulin, Albert G; Kishimoto, Shigeru; Mizutani, Takashi; Kauppinen, Esko I; Ohno, Yutaka

2013-01-01

A variety of plastic products, ranging from those for daily necessities to electronics products and medical devices, are produced by moulding techniques. The incorporation of electronic circuits into various plastic products is limited by the brittle nature of silicon wafers. Here we report mouldable integrated circuits for the first time. The devices are composed entirely of carbon-based materials, that is, their active channels and passive elements are all fabricated from stretchable and thermostable assemblies of carbon nanotubes, with plastic polymer dielectric layers and substrates. The all-carbon thin-film transistors exhibit a mobility of 1,027 cm(2) V(-1) s(-1) and an ON/OFF ratio of 10(5). The devices also exhibit extreme biaxial stretchability of up to 18% when subjected to thermopressure forming. We demonstrate functional integrated circuits that can be moulded into a three-dimensional dome. Such mouldable electronics open new possibilities by allowing for the addition of electronic/plastic-like functionalities to plastic/electronic products, improving their designability.

Beyond CMOS: heterogeneous integration of III–V devices, RF MEMS and other dissimilar materials/devices with Si CMOS to create intelligent microsystems

PubMed Central

Kazior, Thomas E.

2014-01-01

Advances in silicon technology continue to revolutionize micro-/nano-electronics. However, Si cannot do everything, and devices/components based on other materials systems are required. What is the best way to integrate these dissimilar materials and to enhance the capabilities of Si, thereby continuing the micro-/nano-electronics revolution? In this paper, I review different approaches to heterogeneously integrate dissimilar materials with Si complementary metal oxide semiconductor (CMOS) technology. In particular, I summarize results on the successful integration of III–V electronic devices (InP heterojunction bipolar transistors (HBTs) and GaN high-electron-mobility transistors (HEMTs)) with Si CMOS on a common silicon-based wafer using an integration/fabrication process similar to a SiGe BiCMOS process (BiCMOS integrates bipolar junction and CMOS transistors). Our III–V BiCMOS process has been scaled to 200 mm diameter wafers for integration with scaled CMOS and used to fabricate radio-frequency (RF) and mixed signals circuits with on-chip digital control/calibration. I also show that RF microelectromechanical systems (MEMS) can be integrated onto this platform to create tunable or reconfigurable circuits. Thus, heterogeneous integration of III–V devices, MEMS and other dissimilar materials with Si CMOS enables a new class of high-performance integrated circuits that enhance the capabilities of existing systems, enable new circuit architectures and facilitate the continued proliferation of low-cost micro-/nano-electronics for a wide range of applications. PMID:24567473

Beyond CMOS: heterogeneous integration of III-V devices, RF MEMS and other dissimilar materials/devices with Si CMOS to create intelligent microsystems.

PubMed

Kazior, Thomas E

2014-03-28

Advances in silicon technology continue to revolutionize micro-/nano-electronics. However, Si cannot do everything, and devices/components based on other materials systems are required. What is the best way to integrate these dissimilar materials and to enhance the capabilities of Si, thereby continuing the micro-/nano-electronics revolution? In this paper, I review different approaches to heterogeneously integrate dissimilar materials with Si complementary metal oxide semiconductor (CMOS) technology. In particular, I summarize results on the successful integration of III-V electronic devices (InP heterojunction bipolar transistors (HBTs) and GaN high-electron-mobility transistors (HEMTs)) with Si CMOS on a common silicon-based wafer using an integration/fabrication process similar to a SiGe BiCMOS process (BiCMOS integrates bipolar junction and CMOS transistors). Our III-V BiCMOS process has been scaled to 200 mm diameter wafers for integration with scaled CMOS and used to fabricate radio-frequency (RF) and mixed signals circuits with on-chip digital control/calibration. I also show that RF microelectromechanical systems (MEMS) can be integrated onto this platform to create tunable or reconfigurable circuits. Thus, heterogeneous integration of III-V devices, MEMS and other dissimilar materials with Si CMOS enables a new class of high-performance integrated circuits that enhance the capabilities of existing systems, enable new circuit architectures and facilitate the continued proliferation of low-cost micro-/nano-electronics for a wide range of applications.

Photonic Integrated Circuits

NASA Technical Reports Server (NTRS)

Krainak, Michael; Merritt, Scott

2016-01-01

Integrated photonics generally is the integration of multiple lithographically defined photonic and electronic components and devices (e.g. lasers, detectors, waveguides passive structures, modulators, electronic control and optical interconnects) on a single platform with nanometer-scale feature sizes. The development of photonic integrated circuits permits size, weight, power and cost reductions for spacecraft microprocessors, optical communication, processor buses, advanced data processing, and integrated optic science instrument optical systems, subsystems and components. This is particularly critical for small spacecraft platforms. We will give an overview of some NASA applications for integrated photonics.

Tomography experiment of an integrated circuit specimen using 3 MeV electrons in the transmission electron microscope.

PubMed

Zhang, Hai-Bo; Zhang, Xiang-Liang; Wang, Yong; Takaoka, Akio

2007-01-01

The possibility of utilizing high-energy electron tomography to characterize the micron-scale three dimensional (3D) structures of integrated circuits has been demonstrated experimentally. First, electron transmission through a tilted SiO(2) film was measured with an ultrahigh-voltage electron microscope (ultra-HVEM) and analyzed from the point of view of elastic scattering of electrons, showing that linear attenuation of the logarithmic electron transmission still holds valid for effective specimen thicknesses up to 5 microm under 2 MV accelerating voltages. Electron tomography of a micron-order thick integrated circuit specimen including the Cu/via interconnect was then tried with 3 MeV electrons in the ultra-HVEM. Serial projection images of the specimen tilted at different angles over the range of +/-90 degrees were acquired, and 3D reconstruction was performed with the images by means of the IMOD software package. Consequently, the 3D structures of the Cu lines, via and void, were revealed by cross sections and surface rendering.

Stitching Codeable Circuits: High School Students' Learning About Circuitry and Coding with Electronic Textiles

NASA Astrophysics Data System (ADS)

Litts, Breanne K.; Kafai, Yasmin B.; Lui, Debora A.; Walker, Justice T.; Widman, Sari A.

2017-10-01

Learning about circuitry by connecting a battery, light bulb, and wires is a common activity in many science classrooms. In this paper, we expand students' learning about circuitry with electronic textiles, which use conductive thread instead of wires and sewable LEDs instead of lightbulbs, by integrating programming sensor inputs and light outputs and examining how the two domains interact. We implemented an electronic textiles unit with 23 high school students ages 16-17 years who learned how to craft and code circuits with the LilyPad Arduino, an electronic textile construction kit. Our analyses not only confirm significant increases in students' understanding of functional circuits but also showcase students' ability in designing and remixing program code for controlling circuits. In our discussion, we address opportunities and challenges of introducing codeable circuit design for integrating maker activities that include engineering and computing into classrooms.

Chip-integrated optical power limiter based on an all-passive micro-ring resonator

NASA Astrophysics Data System (ADS)

Yan, Siqi; Dong, Jianji; Zheng, Aoling; Zhang, Xinliang

2014-10-01

Recent progress in silicon nanophotonics has dramatically advanced the possible realization of large-scale on-chip optical interconnects integration. Adopting photons as information carriers can break the performance bottleneck of electronic integrated circuit such as serious thermal losses and poor process rates. However, in integrated photonics circuits, few reported work can impose an upper limit of optical power therefore prevent the optical device from harm caused by high power. In this study, we experimentally demonstrate a feasible integrated scheme based on a single all-passive micro-ring resonator to realize the optical power limitation which has a similar function of current limiting circuit in electronics. Besides, we analyze the performance of optical power limiter at various signal bit rates. The results show that the proposed device can limit the signal power effectively at a bit rate up to 20 Gbit/s without deteriorating the signal. Meanwhile, this ultra-compact silicon device can be completely compatible with the electronic technology (typically complementary metal-oxide semiconductor technology), which may pave the way of very large scale integrated photonic circuits for all-optical information processors and artificial intelligence systems.

Integrated circuit failure analysis by low-energy charge-induced voltage alteration

DOEpatents

Cole, E.I. Jr.

1996-06-04

A scanning electron microscope apparatus and method are described for detecting and imaging open-circuit defects in an integrated circuit (IC). The invention uses a low-energy high-current focused electron beam that is scanned over a device surface of the IC to generate a charge-induced voltage alteration (CIVA) signal at the location of any open-circuit defects. The low-energy CIVA signal may be used to generate an image of the IC showing the location of any open-circuit defects. A low electron beam energy is used to prevent electrical breakdown in any passivation layers in the IC and to minimize radiation damage to the IC. The invention has uses for IC failure analysis, for production-line inspection of ICs, and for qualification of ICs. 5 figs.

Integrated circuit failure analysis by low-energy charge-induced voltage alteration

DOEpatents

Cole, Jr., Edward I.

1996-01-01

A scanning electron microscope apparatus and method are described for detecting and imaging open-circuit defects in an integrated circuit (IC). The invention uses a low-energy high-current focused electron beam that is scanned over a device surface of the IC to generate a charge-induced voltage alteration (CIVA) signal at the location of any open-circuit defects. The low-energy CIVA signal may be used to generate an image of the IC showing the location of any open-circuit defects. A low electron beam energy is used to prevent electrical breakdown in any passivation layers in the IC and to minimize radiation damage to the IC. The invention has uses for IC failure analysis, for production-line inspection of ICs, and for qualification of ICs.

Simple photometer circuits using modular electronic components

NASA Technical Reports Server (NTRS)

Wampler, J. E.

1975-01-01

Operational and peak holding amplifiers are discussed as useful circuits for bioluminescence assays. Circuit diagrams are provided. While analog methods can give a good integration on short time scales, digital methods were found best for long term integration in bioluminescence assays. Power supplies, a general photometer circuit with ratio capability, and variations in the basic photometer design are also considered.

On-chip enzymatic microbiofuel cell-powered integrated circuits.

PubMed

Mark, Andrew G; Suraniti, Emmanuel; Roche, Jérôme; Richter, Harald; Kuhn, Alexander; Mano, Nicolas; Fischer, Peer

2017-05-16

A variety of diagnostic and therapeutic medical technologies rely on long term implantation of an electronic device to monitor or regulate a patient's condition. One proposed approach to powering these devices is to use a biofuel cell to convert the chemical energy from blood nutrients into electrical current to supply the electronics. We present here an enzymatic microbiofuel cell whose electrodes are directly integrated into a digital electronic circuit. Glucose oxidizing and oxygen reducing enzymes are immobilized on microelectrodes of an application specific integrated circuit (ASIC) using redox hydrogels to produce an enzymatic biofuel cell, capable of harvesting electrical power from just a single droplet of 5 mM glucose solution. Optimisation of the fuel cell voltage and power to match the requirements of the electronics allow self-powered operation of the on-board digital circuitry. This study represents a step towards implantable self-powered electronic devices that gather their energy from physiological fluids.

Integrated circuits and logic operations based on single-layer MoS2.

PubMed

Radisavljevic, Branimir; Whitwick, Michael Brian; Kis, Andras

2011-12-27

Logic circuits and the ability to amplify electrical signals form the functional backbone of electronics along with the possibility to integrate multiple elements on the same chip. The miniaturization of electronic circuits is expected to reach fundamental limits in the near future. Two-dimensional materials such as single-layer MoS(2) represent the ultimate limit of miniaturization in the vertical dimension, are interesting as building blocks of low-power nanoelectronic devices, and are suitable for integration due to their planar geometry. Because they are less than 1 nm thin, 2D materials in transistors could also lead to reduced short channel effects and result in fabrication of smaller and more power-efficient transistors. Here, we report on the first integrated circuit based on a two-dimensional semiconductor MoS(2). Our integrated circuits are capable of operating as inverters, converting logical "1" into logical "0", with room-temperature voltage gain higher than 1, making them suitable for incorporation into digital circuits. We also show that electrical circuits composed of single-layer MoS(2) transistors are capable of performing the NOR logic operation, the basis from which all logical operations and full digital functionality can be deduced.

Stretchable polymer-based electronic device

DOEpatents

Maghribi, Mariam N [Livermore, CA; Krulevitch, Peter A [Pleasanton, CA; Davidson, James Courtney [Livermore, CA; Wilson, Thomas S [Castro Valley, CA; Hamilton, Julie K [Tracy, CA; Benett, William J [Livermore, CA; Tovar, Armando R [San Antonio, TX

2008-02-26

A stretchable electronic circuit or electronic device and a polymer-based process to produce a circuit or electronic device containing a stretchable conducting circuit. The stretchable electronic apparatus has a central longitudinal axis and the apparatus is stretchable in a longitudinal direction generally aligned with the central longitudinal axis. The apparatus comprises a stretchable polymer body and at least one circuit line operatively connected to the stretchable polymer body. The circuit line extends in the longitudinal direction and has a longitudinal component that extends in the longitudinal direction and has an offset component that is at an angle to the longitudinal direction. The longitudinal component and the offset component allow the apparatus to stretch in the longitudinal direction while maintaining the integrity of the circuit line.

Electronic control circuits: A compilation

NASA Technical Reports Server (NTRS)

1973-01-01

A compilation of technical R and D information on circuits and modular subassemblies is presented as a part of a technology utilization program. Fundamental design principles and applications are given. Electronic control circuits discussed include: anti-noise circuit; ground protection device for bioinstrumentation; temperature compensation for operational amplifiers; hybrid gatling capacitor; automatic signal range control; integrated clock-switching control; and precision voltage tolerance detector.

77 FR 60721 - Certain Semiconductor Integrated Circuit Devices and Products Containing Same; Notice of...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-10-04

... Circuit Devices and Products Containing Same; Notice of Commission Determination Not To Review an Initial... public record for this investigation may be viewed on the Commission's electronic docket (EDIS) at http... certain semiconductor integrated circuit devices and products containing same by reason of infringement of...

Materials Integration and Doping of Carbon Nanotube-based Logic Circuits

NASA Astrophysics Data System (ADS)

Geier, Michael

Over the last 20 years, extensive research into the structure and properties of single- walled carbon nanotube (SWCNT) has elucidated many of the exceptional qualities possessed by SWCNTs, including record-setting tensile strength, excellent chemical stability, distinctive optoelectronic features, and outstanding electronic transport characteristics. In order to exploit these remarkable qualities, many application-specific hurdles must be overcome before the material can be implemented in commercial products. For electronic applications, recent advances in sorting SWCNTs by electronic type have enabled significant progress towards SWCNT-based integrated circuits. Despite these advances, demonstrations of SWCNT-based devices with suitable characteristics for large-scale integrated circuits have been limited. The processing methodologies, materials integration, and mechanistic understanding of electronic properties developed in this dissertation have enabled unprecedented scales of SWCNT-based transistor fabrication and integrated circuit demonstrations. Innovative materials selection and processing methods are at the core of this work and these advances have led to transistors with the necessary transport properties required for modern circuit integration. First, extensive collaborations with other research groups allowed for the exploration of SWCNT thin-film transistors (TFTs) using a wide variety of materials and processing methods such as new dielectric materials, hybrid semiconductor materials systems, and solution-based printing of SWCNT TFTs. These materials were integrated into circuit demonstrations such as NOR and NAND logic gates, voltage-controlled ring oscillators, and D-flip-flops using both rigid and flexible substrates. This dissertation explores strategies for implementing complementary SWCNT-based circuits, which were developed by using local metal gate structures that achieve enhancement-mode p-type and n-type SWCNT TFTs with widely separated and symmetric threshold voltages. Additionally, a novel n-type doping procedure for SWCNT TFTs was also developed utilizing a solution-processed organometallic small molecule to demonstrate the first network top-gated n-type SWCNT TFTs. Lastly, new doping and encapsulation layers were incorporated to stabilize both p-type and n-type SWCNT TFT electronic properties, which enabled the fabrication of large-scale memory circuits. Employing these materials and processing advances has addressed many application specific barriers to commercialization. For instance, the first thin-film SWCNT complementary metal-oxide-semi-conductor (CMOS) logic devices are demonstrated with sub-nanowatt static power consumption and full rail-to-rail voltage transfer characteristics. With the introduction of a new n-type Rh-based molecular dopant, the first SWCNT TFTs are fabricated in top-gate geometries over large areas with high yield. Then by utilizing robust encapsulation methods, stable and uniform electronic performance of both p-type and n-type SWCNT TFTs has been achieved. Based on these complementary SWCNT TFTs, it is possible to simulate, design, and fabricate arrays of low-power static random access memory (SRAM) circuits, achieving large-scale integration for the first time based on solution-processed semiconductors. Together, this work provides a direct pathway for solution processable, large scale, power-efficient advanced integrated logic circuits and systems.

Biomedical Diagnostics Enabled by Integrated Organic and Printed Electronics.

PubMed

Ahmadraji, Termeh; Gonzalez-Macia, Laura; Ritvonen, Tapio; Willert, Andreas; Ylimaula, Satu; Donaghy, David; Tuurala, Saara; Suhonen, Mika; Smart, Dave; Morrin, Aoife; Efremov, Vitaly; Baumann, Reinhard R; Raja, Munira; Kemppainen, Antti; Killard, Anthony J

2017-07-18

Organic and printed electronics integration has the potential to revolutionize many technologies, including biomedical diagnostics. This work demonstrates the successful integration of multiple printed electronic functionalities into a single device capable of the measurement of hydrogen peroxide and total cholesterol. The single-use device employed printed electrochemical sensors for hydrogen peroxide electroreduction integrated with printed electrochromic display and battery. The system was driven by a conventional electronic circuit designed to illustrate the complete integration of silicon integrated circuits via pick and place or using organic electronic circuits. The device was capable of measuring 8 μL samples of both hydrogen peroxide (0-5 mM, 2.72 × 10 -6 A·mM -1 ) and total cholesterol in serum from 0 to 9 mM (1.34 × 10 -8 A·mM -1 , r 2 = 0.99, RSD < 10%, n = 3), and the result was output on a semiquantitative linear bar display. The device could operate for 10 min via a printed battery, and display the result for many hours or days. A mobile phone "app" was also capable of reading the test result and transmitting this to a remote health care provider. Such a technology could allow improved management of conditions such as hypercholesterolemia.

Viewing Integrated-Circuit Interconnections By SEM

NASA Technical Reports Server (NTRS)

Lawton, Russel A.; Gauldin, Robert E.; Ruiz, Ronald P.

1990-01-01

Back-scattering of energetic electrons reveals hidden metal layers. Experiment shows that with suitable operating adjustments, scanning electron microscopy (SEM) used to look for defects in aluminum interconnections in integrated circuits. Enables monitoring, in situ, of changes in defects caused by changes in temperature. Gives truer picture of defects, as etching can change stress field of metal-and-passivation pattern, causing changes in defects.

Very high speed integrated circuits - Into the second generation. V - The issues of standardization and technology insertion

NASA Astrophysics Data System (ADS)

Martin, J.

1982-04-01

It is shown that the fulfillment of very high speed integrated circuit (VHSIC) device development goals entails the restructuring of military electronics acquisition policy, standardization which produces the maximum number of systems and subsystems by means of the minimum number of flexible, broad-purpose, high-power semiconductors, and especially the standardization of bus structures incorporating a priorization system. It is expected that the Design Specification Handbook currently under preparation by the VHSIC program office of the DOD will make the design of such systems a task whose complexity is comparable to that of present integrated circuit electronics.

Graphene radio frequency receiver integrated circuit.

PubMed

Han, Shu-Jen; Garcia, Alberto Valdes; Oida, Satoshi; Jenkins, Keith A; Haensch, Wilfried

2014-01-01

Graphene has attracted much interest as a future channel material in radio frequency electronics because of its superior electrical properties. Fabrication of a graphene integrated circuit without significantly degrading transistor performance has proven to be challenging, posing one of the major bottlenecks to compete with existing technologies. Here we present a fabrication method fully preserving graphene transistor quality, demonstrated with the implementation of a high-performance three-stage graphene integrated circuit. The circuit operates as a radio frequency receiver performing signal amplification, filtering and downconversion mixing. All circuit components are integrated into 0.6 mm(2) area and fabricated on 200 mm silicon wafers, showing the unprecedented graphene circuit complexity and silicon complementary metal-oxide-semiconductor process compatibility. The demonstrated circuit performance allow us to use graphene integrated circuit to perform practical wireless communication functions, receiving and restoring digital text transmitted on a 4.3-GHz carrier signal.

Graphene radio frequency receiver integrated circuit

NASA Astrophysics Data System (ADS)

Han, Shu-Jen; Garcia, Alberto Valdes; Oida, Satoshi; Jenkins, Keith A.; Haensch, Wilfried

2014-01-01

Graphene has attracted much interest as a future channel material in radio frequency electronics because of its superior electrical properties. Fabrication of a graphene integrated circuit without significantly degrading transistor performance has proven to be challenging, posing one of the major bottlenecks to compete with existing technologies. Here we present a fabrication method fully preserving graphene transistor quality, demonstrated with the implementation of a high-performance three-stage graphene integrated circuit. The circuit operates as a radio frequency receiver performing signal amplification, filtering and downconversion mixing. All circuit components are integrated into 0.6 mm2 area and fabricated on 200 mm silicon wafers, showing the unprecedented graphene circuit complexity and silicon complementary metal-oxide-semiconductor process compatibility. The demonstrated circuit performance allow us to use graphene integrated circuit to perform practical wireless communication functions, receiving and restoring digital text transmitted on a 4.3-GHz carrier signal.

Spiers Memorial Lecture. Molecular mechanics and molecular electronics.

PubMed

Beckman, Robert; Beverly, Kris; Boukai, Akram; Bunimovich, Yuri; Choi, Jang Wook; DeIonno, Erica; Green, Johnny; Johnston-Halperin, Ezekiel; Luo, Yi; Sheriff, Bonnie; Stoddart, Fraser; Heath, James R

2006-01-01

We describe our research into building integrated molecular electronics circuitry for a diverse set of functions, and with a focus on the fundamental scientific issues that surround this project. In particular, we discuss experiments aimed at understanding the function of bistable rotaxane molecular electronic switches by correlating the switching kinetics and ground state thermodynamic properties of those switches in various environments, ranging from the solution phase to a Langmuir monolayer of the switching molecules sandwiched between two electrodes. We discuss various devices, low bit-density memory circuits, and ultra-high density memory circuits that utilize the electrochemical switching characteristics of these molecules in conjunction with novel patterning methods. We also discuss interconnect schemes that are capable of bridging the micrometre to submicrometre length scales of conventional patterning approaches to the near-molecular length scales of the ultra-dense memory circuits. Finally, we discuss some of the challenges associated with fabricated ultra-dense molecular electronic integrated circuits.

A scalable neural chip with synaptic electronics using CMOS integrated memristors.

PubMed

Cruz-Albrecht, Jose M; Derosier, Timothy; Srinivasa, Narayan

2013-09-27

The design and simulation of a scalable neural chip with synaptic electronics using nanoscale memristors fully integrated with complementary metal-oxide-semiconductor (CMOS) is presented. The circuit consists of integrate-and-fire neurons and synapses with spike-timing dependent plasticity (STDP). The synaptic conductance values can be stored in memristors with eight levels, and the topology of connections between neurons is reconfigurable. The circuit has been designed using a 90 nm CMOS process with via connections to on-chip post-processed memristor arrays. The design has about 16 million CMOS transistors and 73 728 integrated memristors. We provide circuit level simulations of the entire chip performing neuronal and synaptic computations that result in biologically realistic functional behavior.

Simple Electronic Analog of a Josephson Junction.

ERIC Educational Resources Information Center

Henry, R. W.; And Others

1981-01-01

Demonstrates that an electronic Josephson junction analog constructed from three integrated circuits plus an external reference oscillator can exhibit many of the circuit phenomena of a real Josephson junction. Includes computer and other applications of the analog. (Author/SK)

Multichannel, Active Low-Pass Filters

NASA Technical Reports Server (NTRS)

Lev, James J.

1989-01-01

Multichannel integrated circuits cascaded to obtain matched characteristics. Gain and phase characteristics of channels of multichannel, multistage, active, low-pass filter matched by making filter of cascaded multichannel integrated-circuit operational amplifiers. Concept takes advantage of inherent equality of electrical characteristics of nominally-identical circuit elements made on same integrated-circuit chip. Characteristics of channels vary identically with changes in temperature. If additional matched channels needed, chips containing more than two operational amplifiers apiece (e.g., commercial quad operational amplifliers) used. Concept applicable to variety of equipment requiring matched gain and phase in multiple channels - radar, test instruments, communication circuits, and equipment for electronic countermeasures.

Military Curricula for Vocational & Technical Education. Basic Electricity and Electronics. CANTRAC A-100-0010. Module 34: Linear Integrated Circuits. Study Booklet.

ERIC Educational Resources Information Center

Chief of Naval Education and Training Support, Pensacola, FL.

This individualized learning module on linear integrated circuits is one in a series of modules for a course in basic electricity and electronics. The course is one of a number of military-developed curriculum packages selected for adaptation to vocational instructional and curriculum development in a civilian setting. Two lessons are included in…

RLE progress report no. 133, 1 January - 31 December 1990

NASA Technical Reports Server (NTRS)

Allen, Jonathan; Kleppner, Daniel; Ziegler, Mary J. (Editor); Passero, Barbara (Editor)

1990-01-01

Activities of the Research Laboratory of Electronics at MIT are summarized. NASA-sponsored research in the area of synthetic aperture radar image interpretation and simulation is described. Other government-sponsored and industry-sponsored studies are also described which address the following topics: microwave and millimeter wave integrated circuits, high-speed integrated circuit interconnects, Instrument Landing System/Microwave Landing System frequency management assessment, and superconducting electronics.

Additive manufacturing of hybrid circuits

DOE PAGES

Bell, Nelson S.; Sarobol, Pylin; Cook, Adam; ...

2016-03-26

There is a rising interest in developing functional electronics using additively manufactured components. Considerations in materials selection and pathways to forming hybrid circuits and devices must demonstrate useful electronic function; must enable integration; and must complement the complex shape, low cost, high volume, and high functionality of structural but generally electronically passive additively manufactured components. This article reviews several emerging technologies being used in industry and research/development to provide integration advantages of fabricating multilayer hybrid circuits or devices. First, we review a maskless, noncontact, direct write (DW) technology that excels in the deposition of metallic colloid inks for electrical interconnects.more » Second, we review a complementary technology, aerosol deposition (AD), which excels in the deposition of metallic and ceramic powder as consolidated, thick conformal coatings and is additionally patternable through masking. As a result, we show examples of hybrid circuits/devices integrated beyond 2-D planes, using combinations of DW or AD processes and conventional, established processes.« less

Interface For MIL-STD-1553B Data Bus

NASA Technical Reports Server (NTRS)

Davies, Bryan L.; Osborn, Stephen H.; Sullender, Craig C.

1993-01-01

Electronic control-logic subsystem acts as interface between microcontroller and MIL-STD-1553B data bus. Subsystem made of relatively small number of integrated circuits. Advantages include low power, few integrated-circuit chips, and little need for control signals.

Gated integrator with signal baseline subtraction

DOEpatents

Wang, X.

1996-12-17

An ultrafast, high precision gated integrator includes an opamp having differential inputs. A signal to be integrated is applied to one of the differential inputs through a first input network, and a signal indicative of the DC offset component of the signal to be integrated is applied to the other of the differential inputs through a second input network. A pair of electronic switches in the first and second input networks define an integrating period when they are closed. The first and second input networks are substantially symmetrically constructed of matched components so that error components introduced by the electronic switches appear symmetrically in both input circuits and, hence, are nullified by the common mode rejection of the integrating opamp. The signal indicative of the DC offset component is provided by a sample and hold circuit actuated as the integrating period begins. The symmetrical configuration of the integrating circuit improves accuracy and speed by balancing out common mode errors, by permitting the use of high speed switching elements and high speed opamps and by permitting the use of a small integrating time constant. The sample and hold circuit substantially eliminates the error caused by the input signal baseline offset during a single integrating window. 5 figs.

Gated integrator with signal baseline subtraction

DOEpatents

Wang, Xucheng

1996-01-01

An ultrafast, high precision gated integrator includes an opamp having differential inputs. A signal to be integrated is applied to one of the differential inputs through a first input network, and a signal indicative of the DC offset component of the signal to be integrated is applied to the other of the differential inputs through a second input network. A pair of electronic switches in the first and second input networks define an integrating period when they are closed. The first and second input networks are substantially symmetrically constructed of matched components so that error components introduced by the electronic switches appear symmetrically in both input circuits and, hence, are nullified by the common mode rejection of the integrating opamp. The signal indicative of the DC offset component is provided by a sample and hold circuit actuated as the integrating period begins. The symmetrical configuration of the integrating circuit improves accuracy and speed by balancing out common mode errors, by permitting the use of high speed switching elements and high speed opamps and by permitting the use of a small integrating time constant. The sample and hold circuit substantially eliminates the error caused by the input signal baseline offset during a single integrating window.

Waveshaping electronic circuit

NASA Technical Reports Server (NTRS)

Harper, T. P.

1971-01-01

Circuit provides output signal with sinusoidal function in response to bipolar transition of input signal. Instantaneous transition shapes into linear rate of change and linear rate of change shapes into sinusoidal rate of change. Circuit contains only active components; therefore, compatibility with integrated circuit techniques is assured.

Three-dimensional integration of nanotechnologies for computing and data storage on a single chip

NASA Astrophysics Data System (ADS)

Shulaker, Max M.; Hills, Gage; Park, Rebecca S.; Howe, Roger T.; Saraswat, Krishna; Wong, H.-S. Philip; Mitra, Subhasish

2017-07-01

The computing demands of future data-intensive applications will greatly exceed the capabilities of current electronics, and are unlikely to be met by isolated improvements in transistors, data storage technologies or integrated circuit architectures alone. Instead, transformative nanosystems, which use new nanotechnologies to simultaneously realize improved devices and new integrated circuit architectures, are required. Here we present a prototype of such a transformative nanosystem. It consists of more than one million resistive random-access memory cells and more than two million carbon-nanotube field-effect transistors—promising new nanotechnologies for use in energy-efficient digital logic circuits and for dense data storage—fabricated on vertically stacked layers in a single chip. Unlike conventional integrated circuit architectures, the layered fabrication realizes a three-dimensional integrated circuit architecture with fine-grained and dense vertical connectivity between layers of computing, data storage, and input and output (in this instance, sensing). As a result, our nanosystem can capture massive amounts of data every second, store it directly on-chip, perform in situ processing of the captured data, and produce ‘highly processed’ information. As a working prototype, our nanosystem senses and classifies ambient gases. Furthermore, because the layers are fabricated on top of silicon logic circuitry, our nanosystem is compatible with existing infrastructure for silicon-based technologies. Such complex nano-electronic systems will be essential for future high-performance and highly energy-efficient electronic systems.

Three-dimensional integration of nanotechnologies for computing and data storage on a single chip.

PubMed

Shulaker, Max M; Hills, Gage; Park, Rebecca S; Howe, Roger T; Saraswat, Krishna; Wong, H-S Philip; Mitra, Subhasish

2017-07-05

The computing demands of future data-intensive applications will greatly exceed the capabilities of current electronics, and are unlikely to be met by isolated improvements in transistors, data storage technologies or integrated circuit architectures alone. Instead, transformative nanosystems, which use new nanotechnologies to simultaneously realize improved devices and new integrated circuit architectures, are required. Here we present a prototype of such a transformative nanosystem. It consists of more than one million resistive random-access memory cells and more than two million carbon-nanotube field-effect transistors-promising new nanotechnologies for use in energy-efficient digital logic circuits and for dense data storage-fabricated on vertically stacked layers in a single chip. Unlike conventional integrated circuit architectures, the layered fabrication realizes a three-dimensional integrated circuit architecture with fine-grained and dense vertical connectivity between layers of computing, data storage, and input and output (in this instance, sensing). As a result, our nanosystem can capture massive amounts of data every second, store it directly on-chip, perform in situ processing of the captured data, and produce 'highly processed' information. As a working prototype, our nanosystem senses and classifies ambient gases. Furthermore, because the layers are fabricated on top of silicon logic circuitry, our nanosystem is compatible with existing infrastructure for silicon-based technologies. Such complex nano-electronic systems will be essential for future high-performance and highly energy-efficient electronic systems.

Integrated testing system FiTest for diagnosis of PCBA

NASA Astrophysics Data System (ADS)

Bogdan, Arkadiusz; Lesniak, Adam

2016-12-01

This article presents the innovative integrated testing system FiTest for automatic, quick inspection of printed circuit board assemblies (PCBA) manufactured in Surface Mount Technology (SMT). Integration of Automatic Optical Inspection (AOI), In-Circuit Tests (ICT) and Functional Circuit Tests (FCT) resulted in universal hardware platform for testing variety of electronic circuits. The platform provides increased test coverage, decreased level of false calls and optimization of test duration. The platform is equipped with powerful algorithms performing tests in a stable and repetitive way and providing effective management of diagnosis.

Assessment of SOI Devices and Circuits at Extreme Temperatures

NASA Technical Reports Server (NTRS)

Elbuluk, Malik; Hammoud, Ahmad; Patterson, Richard L.

2007-01-01

Electronics designed for use in future NASA space exploration missions are expected to encounter extreme temperatures and wide thermal swings. Such missions include planetary surface exploration, bases, rovers, landers, orbiters, and satellites. Electronics designed for such applications must, therefore, be able to withstand exposure to extreme temperatures and to perform properly for the duration of mission. The Low Temperature Electronics Program at the NASA Glenn Research Center focuses on research and development of electrical devices, circuits, and systems suitable for applications in deep space exploration missions and aerospace environment. Silicon-On-Insulator (SOI) technology has been under active consideration in the electronics industry for many years due to the advantages that it can provide in integrated circuit (IC) chips and computer processors. Faster switching, less power, radiationtolerance, reduced leakage, and high temp-erature capability are some of the benefits that are offered by using SOI-based devices. A few SOI circuits are available commercially. However, there is a noticeable interest in SOI technology for different applications. Very little data, however, exist on the performance of such circuits under cryogenic temperatures. In this work, the performance of SOI integrated circuits, evaluated under low temperature and thermal cycling, are reported. In particular, three examples of SOI circuits that have been tested for operation at low at temperatures are given. These circuits are SOI operational amplifiers, timers and power MOSFET drivers. The investigations were carried out to establish a baseline on the functionality and to determine suitability of these circuits for use in space exploration missions at cryogenic temperatures. The findings are useful to mission planners and circuit designers so that proper selection of electronic parts can be made, and risk assessment can be established for such circuits for use in space missions.

Heterogeneous Monolithic Integration of Single-Crystal Organic Materials.

PubMed

Park, Kyung Sun; Baek, Jangmi; Park, Yoonkyung; Lee, Lynn; Hyon, Jinho; Koo Lee, Yong-Eun; Shrestha, Nabeen K; Kang, Youngjong; Sung, Myung Mo

2017-02-01

Manufacturing high-performance organic electronic circuits requires the effective heterogeneous integration of different nanoscale organic materials with uniform morphology and high crystallinity in a desired arrangement. In particular, the development of high-performance organic electronic and optoelectronic devices relies on high-quality single crystals that show optimal intrinsic charge-transport properties and electrical performance. Moreover, the heterogeneous integration of organic materials on a single substrate in a monolithic way is highly demanded for the production of fundamental organic electronic components as well as complex integrated circuits. Many of the various methods that have been designed to pattern multiple heterogeneous organic materials on a substrate and the heterogeneous integration of organic single crystals with their crystal growth are described here. Critical issues that have been encountered in the development of high-performance organic integrated electronics are also addressed. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Modular integration of electronics and microfluidic systems using flexible printed circuit boards.

PubMed

Wu, Amy; Wang, Lisen; Jensen, Erik; Mathies, Richard; Boser, Bernhard

2010-02-21

Microfluidic systems offer an attractive alternative to conventional wet chemical methods with benefits including reduced sample and reagent volumes, shorter reaction times, high-throughput, automation, and low cost. However, most present microfluidic systems rely on external means to analyze reaction products. This substantially adds to the size, complexity, and cost of the overall system. Electronic detection based on sub-millimetre size integrated circuits (ICs) has been demonstrated for a wide range of targets including nucleic and amino acids, but deployment of this technology to date has been limited due to the lack of a flexible process to integrate these chips within microfluidic devices. This paper presents a modular and inexpensive process to integrate ICs with microfluidic systems based on standard printed circuit board (PCB) technology to assemble the independently designed microfluidic and electronic components. The integrated system can accommodate multiple chips of different sizes bonded to glass or PDMS microfluidic systems. Since IC chips and flex PCB manufacturing and assembly are industry standards with low cost, the integrated system is economical for both laboratory and point-of-care settings.

Modular electron transfer circuits for synthetic biology

PubMed Central

Agapakis, Christina M

2010-01-01

Electron transfer is central to a wide range of essential metabolic pathways, from photosynthesis to fermentation. The evolutionary diversity and conservation of proteins that transfer electrons makes these pathways a valuable platform for engineered metabolic circuits in synthetic biology. Rational engineering of electron transfer pathways containing hydrogenases has the potential to lead to industrial scale production of hydrogen as an alternative source of clean fuel and experimental assays for understanding the complex interactions of multiple electron transfer proteins in vivo. We designed and implemented a synthetic hydrogen metabolism circuit in Escherichia coli that creates an electron transfer pathway both orthogonal to and integrated within existing metabolism. The design of such modular electron transfer circuits allows for facile characterization of in vivo system parameters with applications toward further engineering for alternative energy production. PMID:21468209

Chemical vapor deposition for automatic processing of integrated circuits

NASA Technical Reports Server (NTRS)

Kennedy, B. W.

1980-01-01

Chemical vapor deposition for automatic processing of integrated circuits including the wafer carrier and loading from a receiving air track into automatic furnaces and unloading on to a sending air track is discussed. Passivation using electron beam deposited quartz is also considered.

A nanocryotron comparator can connect single-flux-quantum circuits to conventional electronics

NASA Astrophysics Data System (ADS)

Zhao, Qing-Yuan; McCaughan, Adam N.; Dane, Andrew E.; Berggren, Karl K.; Ortlepp, Thomas

2017-04-01

Integration with conventional electronics offers a straightforward and economical approach to upgrading existing superconducting technologies, such as scaling up superconducting detectors into large arrays and combining single flux quantum (SFQ) digital circuits with semiconductor logic gates and memories. However, direct output signals from superconducting devices (e.g., Josephson junctions) are usually not compatible with the input requirements of conventional devices (e.g., transistors). Here, we demonstrate the use of a single three-terminal superconducting-nanowire device, called the nanocryotron (nTron), as a digital comparator to combine SFQ circuits with mature semiconductor circuits such as complementary metal oxide semiconductor (CMOS) circuits. Since SFQ circuits can digitize output signals from general superconducting devices and CMOS circuits can interface existing CMOS-compatible electronics, our results demonstrate the feasibility of a general architecture that uses an nTron as an interface to realize a ‘super-hybrid’ system consisting of superconducting detectors, superconducting quantum electronics, CMOS logic gates and memories, and other conventional electronics.

Cost optimization in low volume VLSI circuits

NASA Technical Reports Server (NTRS)

Cook, K. B., Jr.; Kerns, D. V., Jr.

1982-01-01

The relationship of integrated circuit (IC) cost to electronic system cost is developed using models for integrated circuit cost which are based on design/fabrication approach. Emphasis is on understanding the relationship between cost and volume for custom circuits suitable for NASA applications. In this report, reliability is a major consideration in the models developed. Results are given for several typical IC designs using off the shelf, full custom, and semicustom IC's with single and double level metallization.

Bridging the Hardware-Software Gap: A Proof Carrying Approach for Computer Systems Trust Evaluation (5.3.5)

DTIC Science & Technology

2017-08-22

has significantly lowered the design cost and shortened the time-to- market (TTM) of Integrated Circuits (ICs) in the electronic industry. Over the...semiconductor companies have focused on high-profit phases such as design, marketing , and sales and have outsourced chip manufacturing, wafer fabrication...supply chain has significantly lowered the design cost and shortened the time- to- market (TTM) of integrated circuits (ICs) in the electronic

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bell, Nelson S.; Sarobol, Pylin; Cook, Adam

There is a rising interest in developing functional electronics using additively manufactured components. Considerations in materials selection and pathways to forming hybrid circuits and devices must demonstrate useful electronic function; must enable integration; and must complement the complex shape, low cost, high volume, and high functionality of structural but generally electronically passive additively manufactured components. This article reviews several emerging technologies being used in industry and research/development to provide integration advantages of fabricating multilayer hybrid circuits or devices. First, we review a maskless, noncontact, direct write (DW) technology that excels in the deposition of metallic colloid inks for electrical interconnects.more » Second, we review a complementary technology, aerosol deposition (AD), which excels in the deposition of metallic and ceramic powder as consolidated, thick conformal coatings and is additionally patternable through masking. As a result, we show examples of hybrid circuits/devices integrated beyond 2-D planes, using combinations of DW or AD processes and conventional, established processes.« less

Hybrid stretchable circuits on silicone substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Robinson, A., E-mail: adam.1.robinson@nokia.com; Aziz, A., E-mail: a.aziz1@lancaster.ac.uk; Liu, Q.

When rigid and stretchable components are integrated onto a single elastic carrier substrate, large strain heterogeneities appear in the vicinity of the deformable-non-deformable interfaces. In this paper, we report on a generic approach to manufacture hybrid stretchable circuits where commercial electronic components can be mounted on a stretchable circuit board. Similar to printed circuit board development, the components are electrically bonded on the elastic substrate and interconnected with stretchable electrical traces. The substrate—a silicone matrix carrying concentric rigid disks—ensures both the circuit elasticity and the mechanical integrity of the most fragile materials.

Electron tunneling infrared sensor module with integrated control circuitry

NASA Technical Reports Server (NTRS)

Boyadzhyan-Sevak, Vardkes V. (Inventor)

2001-01-01

In an integrated electron tunneling sensor, an automatic tunneling control circuit varies a high voltage bias applied to the sensor deflection electrode in response to changes in sensor output to maintain the proper gap between the sensor tip and membrane. The control circuit ensures stable tunneling activity in the presence of large signals and other disturbances to the sensor. Output signals from the module may be derived from the amplified sensor output. The integrated sensor module is particularly well adapted for use in blood glucose measurement and monitoring system.

Foundry fabricated photonic integrated circuit optical phase lock loop.

PubMed

Bałakier, Katarzyna; Fice, Martyn J; Ponnampalam, Lalitha; Graham, Chris S; Wonfor, Adrian; Seeds, Alwyn J; Renaud, Cyril C

2017-07-24

This paper describes the first foundry-based InP photonic integrated circuit (PIC) designed to work within a heterodyne optical phase locked loop (OPLL). The PIC and an external electronic circuit were used to phase-lock a single-line semiconductor laser diode to an incoming reference laser, with tuneable frequency offset from 4 GHz to 12 GHz. The PIC contains 33 active and passive components monolithically integrated on a single chip, fully demonstrating the capability of a generic foundry PIC fabrication model. The electronic part of the OPLL consists of commercially available RF components. This semi-packaged system stabilizes the phase and frequency of the integrated laser so that an absolute frequency, high-purity heterodyne signal can be generated when the OPLL is in operation, with phase noise lower than -100 dBc/Hz at 10 kHz offset from the carrier. This is the lowest phase noise level ever demonstrated by monolithically integrated OPLLs.

Photonic Integrated Circuit (PIC) Device Structures: Background, Fabrication Ecosystem, Relevance to Space Systems Applications, and Discussion of Related Radiation Effects

NASA Technical Reports Server (NTRS)

Alt, Shannon

2016-01-01

Electronic integrated circuits are considered one of the most significant technological advances of the 20th century, with demonstrated impact in their ability to incorporate successively higher numbers transistors and construct electronic devices onto a single CMOS chip. Photonic integrated circuits (PICs) exist as the optical analog to integrated circuits; however, in place of transistors, PICs consist of numerous scaled optical components, including such "building-block" structures as waveguides, MMIs, lasers, and optical ring resonators. The ability to construct electronic and photonic components on a single microsystems platform offers transformative potential for the development of technologies in fields including communications, biomedical device development, autonomous navigation, and chemical and atmospheric sensing. Developing on-chip systems that provide new avenues for integration and replacement of bulk optical and electro-optic components also reduces size, weight, power and cost (SWaP-C) limitations, which are important in the selection of instrumentation for specific flight projects. The number of applications currently emerging for complex photonics systems-particularly in data communications-warrants additional investigations when considering reliability for space systems development. This Body of Knowledge document seeks to provide an overview of existing integrated photonics architectures; the current state of design, development, and fabrication ecosystems in the United States and Europe; and potential space applications, with emphasis given to associated radiation effects and reliability.

Monolithic circuits for barium fluoride detectors used in nuclear physics experiments. CRADA final report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Varner, R.L.; Blankenship, J.L.; Beene, J.R.

1998-02-01

Custom monolithic electronic circuits have been developed recently for large detector applications in high energy physics where subsystems require tens of thousands of channels of signal processing and data acquisition. In the design and construction of these enormous detectors, it has been found that monolithic circuits offer significant advantages over discrete implementations through increased performance, flexible packaging, lower power and reduced cost per channel. Much of the integrated circuit design for the high energy physics community is directly applicable to intermediate energy heavy-ion and electron physics. This STTR project conducted in collaboration with researchers at the Holifield Radioactive Ion Beammore » Facility (HRIBF) at Oak Ridge National Laboratory, sought to develop a new integrated circuit chip set for barium fluoride (BaF{sub 2}) detector arrays based upon existing CMOS monolithic circuit designs created for the high energy physics experiments. The work under the STTR Phase 1 demonstrated through the design, simulation, and testing of several prototype chips the feasibility of using custom CMOS integrated circuits for processing signals from BaF{sub 2} detectors. Function blocks including charge-sensitive amplifiers, comparators, one shots, time-to-amplitude converters, analog memory circuits and buffer amplifiers were implemented during Phase 1 effort. Experimental results from bench testing and laboratory testing with sources were documented.« less

Modeling from Local to Subsystem Level Effects in Analog and Digital Circuits Due to Space Induced Single Event Transients

NASA Technical Reports Server (NTRS)

Perez, Reinaldo J.

2011-01-01

Single Event Transients in analog and digital electronics from space generated high energetic nuclear particles can disrupt either temporarily and sometimes permanently the functionality and performance of electronics in space vehicles. This work first provides some insights into the modeling of SET in electronic circuits that can be used in SPICE-like simulators. The work is then directed to present methodologies, one of which was developed by this author, for the assessment of SET at different levels of integration in electronics, from the circuit level to the subsystem level.

Medium-scale carbon nanotube thin-film integrated circuits on flexible plastic substrates.

PubMed

Cao, Qing; Kim, Hoon-sik; Pimparkar, Ninad; Kulkarni, Jaydeep P; Wang, Congjun; Shim, Moonsub; Roy, Kaushik; Alam, Muhammad A; Rogers, John A

2008-07-24

The ability to form integrated circuits on flexible sheets of plastic enables attributes (for example conformal and flexible formats and lightweight and shock resistant construction) in electronic devices that are difficult or impossible to achieve with technologies that use semiconductor wafers or glass plates as substrates. Organic small-molecule and polymer-based materials represent the most widely explored types of semiconductors for such flexible circuitry. Although these materials and those that use films or nanostructures of inorganics have promise for certain applications, existing demonstrations of them in circuits on plastic indicate modest performance characteristics that might restrict the application possibilities. Here we report implementations of a comparatively high-performance carbon-based semiconductor consisting of sub-monolayer, random networks of single-walled carbon nanotubes to yield small- to medium-scale integrated digital circuits, composed of up to nearly 100 transistors on plastic substrates. Transistors in these integrated circuits have excellent properties: mobilities as high as 80 cm(2) V(-1) s(-1), subthreshold slopes as low as 140 m V dec(-1), operating voltages less than 5 V together with deterministic control over the threshold voltages, on/off ratios as high as 10(5), switching speeds in the kilohertz range even for coarse (approximately 100-microm) device geometries, and good mechanical flexibility-all with levels of uniformity and reproducibility that enable high-yield fabrication of integrated circuits. Theoretical calculations, in contexts ranging from heterogeneous percolative transport through the networks to compact models for the transistors to circuit level simulations, provide quantitative and predictive understanding of these systems. Taken together, these results suggest that sub-monolayer films of single-walled carbon nanotubes are attractive materials for flexible integrated circuits, with many potential areas of application in consumer and other areas of electronics.

77 FR 2957 - Application for Manufacturing Authority, Liberty Pumps, Inc. (Submersible and Water Pumps...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-01-20

..., mechanical seals, electric motors, transformers, capacitors, switches, electronic components, integrated circuits, process controllers, printed circuit assemblies, electrical components, and measuring instruments...

Curvilinear electronics formed using silicon membrane circuits and elastomeric transfer elements.

PubMed

Ko, Heung Cho; Shin, Gunchul; Wang, Shuodao; Stoykovich, Mark P; Lee, Jeong Won; Kim, Dong-Hun; Ha, Jeong Sook; Huang, Yonggang; Hwang, Keh-Chih; Rogers, John A

2009-12-01

Materials and methods to achieve electronics intimately integrated on the surfaces of substrates with complex, curvilinear shapes are described. The approach exploits silicon membranes in circuit mesh structures that can be deformed in controlled ways using thin, elastomeric films. Experimental and theoretical studies of the micromechanics of such curvilinear electronics demonstrate the underlying concepts. Electrical measurements illustrate the high yields that can be obtained. The results represent significant experimental and theoretical advances over recently reported concepts for creating hemispherical photodetectors in electronic eye cameras and for using printable silicon nanoribbons/membranes in flexible electronics. The results might provide practical routes to the integration of high performance electronics with biological tissues and other systems of interest for new applications.

Integrated logic circuits using single-atom transistors

PubMed Central

Mol, J. A.; Verduijn, J.; Levine, R. D.; Remacle, F.

2011-01-01

Scaling down the size of computing circuits is about to reach the limitations imposed by the discrete atomic structure of matter. Reducing the power requirements and thereby dissipation of integrated circuits is also essential. New paradigms are needed to sustain the rate of progress that society has become used to. Single-atom transistors, SATs, cascaded in a circuit are proposed as a promising route that is compatible with existing technology. We demonstrate the use of quantum degrees of freedom to perform logic operations in a complementary-metal–oxide–semiconductor device. Each SAT performs multilevel logic by electrically addressing the electronic states of a dopant atom. A single electron transistor decodes the physical multivalued output into the conventional binary output. A robust scalable circuit of two concatenated full adders is reported, where by utilizing charge and quantum degrees of freedom, the functionality of the transistor is pushed far beyond that of a simple switch. PMID:21808050

Monolithically Integrated Flexible Black Phosphorus Complementary Inverter Circuits.

PubMed

Liu, Yuanda; Ang, Kah-Wee

2017-07-25

Two-dimensional (2D) inverters are a fundamental building block for flexible logic circuits which have previously been realized by heterogeneously wiring transistors with two discrete channel materials. Here, we demonstrate a monolithically integrated complementary inverter made using a homogeneous black phosphorus (BP) nanosheet on flexible substrates. The digital logic inverter circuit is demonstrated via effective threshold voltage tuning within a single BP material, which offers both electron and hole dominated conducting channels with nearly symmetric pinch-off and current saturation. Controllable electron concentration is achieved by accurately modulating the aluminum (Al) donor doping, which realizes BP n-FET with a room-temperature on/off ratio >10 3 . Simultaneously, work function engineering is employed to obtain a low Schottky barrier contact electrode that facilities hole injection, thus enhancing the current density of the BP p-FET by 9.4 times. The flexible inverter circuit shows a clear digital logic voltage inversion operation along with a larger-than-unity direct current voltage gain, while exhibits alternating current dynamic signal switching at a record high frequency up to 100 kHz and remarkable electrical stability upon mechanical bending with a radii as small as 4 mm. Our study demonstrates a practical monolithic integration strategy for achieving functional logic circuits on one material platform, paving the way for future high-density flexible electronic applications.

Analysis of a Distributed Pulse Power System Using a Circuit Analysis Code

DTIC Science & Technology

1979-06-01

dose rate was then integrated to give a number that could be compared with measure- ments made using thermal luminescent dosimeters ( TLD ’ s). Since...NM 8 7117 AND THE BDM CORPORATION, ALBUQUERQUE, NM 87106 Abstract A sophisticated computer code (SCEPTRE), used to analyze electronic circuits...computer code (SCEPTRE), used to analyze electronic circuits, was used to evaluate the performance of a large flash X-ray machine. This device was

Highly efficient on-chip direct electronic-plasmonic transducers

NASA Astrophysics Data System (ADS)

Du, Wei; Wang, Tao; Chu, Hong-Son; Nijhuis, Christian A.

2017-10-01

Photonic elements can carry information with a capacity exceeding 1,000 times that of electronic components, but, due to the optical diffraction limit, these elements are large and difficult to integrate with modern-day nanoelectronics or upcoming packages, such as three-dimensional integrated circuits or stacked high-bandwidth memories1-3. Surface plasmon polaritons can be confined to subwavelength dimensions and can carry information at high speeds (>100 THz)4-6. To combine the small dimensions of nanoelectronics with the fast operating speed of optics via plasmonics, on-chip electronic-plasmonic transducers that directly convert electrical signals into plasmonic signals (and vice versa) are required. Here, we report electronic-plasmonic transducers based on metal-insulator-metal tunnel junctions coupled to plasmonic waveguides with high-efficiency on-chip generation, manipulation and readout of plasmons. These junctions can be readily integrated into existing technologies, and we thus believe that they are promising for applications in on-chip integrated plasmonic circuits.

Integrated circuits for accurate linear analogue electric signal processing

NASA Astrophysics Data System (ADS)

Huijsing, J. H.

1981-11-01

The main lines in the design of integrated circuits for accurate analog linear electric signal processing in a frequency range including DC are investigated. A categorization of universal active electronic devices is presented on the basis of the connections of one of the terminals of the input and output ports to the common ground potential. The means for quantifying the attributes of four types of universal active electronic devices are included. The design of integrated operational voltage amplifiers (OVA) is discussed. Several important applications in the field of general instrumentation are numerically evaluated, and the design of operatinal floating amplifiers is presented.

Common source cascode amplifiers for integrating IR-FPA applications

NASA Technical Reports Server (NTRS)

Woolaway, James T.; Young, Erick T.

1989-01-01

Space based astronomical infrared measurements present stringent performance requirements on the infrared detector arrays and their associated readout circuitry. To evaluate the usefulness of commercial CMOS technology for astronomical readout applications a theoretical and experimental evaluation was performed on source follower and common-source cascode integrating amplifiers. Theoretical analysis indicates that for conditions where the input amplifier integration capacitance is limited by the detectors capacitance the input referred rms noise electrons of each amplifier should be equivalent. For conditions of input gate limited capacitance the source follower should provide lower noise. Measurements of test circuits containing both source follower and common source cascode circuits showed substantially lower input referred noise for the common-source cascode input circuits. Noise measurements yielded 4.8 input referred rms noise electrons for an 8.5 minute integration. The signal and noise gain of the common-source cascode amplifier appears to offer substantial advantages in acheiving predicted noise levels.

Command, Control, Communications, Computers, Intelligence Electronic Warfare (C4IEW) and Sensors. Project Book. Fiscal Year 1996

DTIC Science & Technology

1996-01-01

INTENSIFICATION (AI2) ATD AERIAL SCOUT SENSORS INTEGRATION (ASSI) BISTATIC RADAR FOR WEAPONS LOCATION (BRWL) ATD CLOSE IN MAN PORTABLE MINE DETECTOR (CIMMD...MS IV PE & LINE #: 1X428010.D107 HI Operations/Support DESCRIPTION: The AN/TTC-39A Circuit Switch is a 744 line mobile , automatic ...SYNOPSIS: AN/TTC-39 IS A MOBILE , AUTOMATIC , MODULAR ELECTRONIC CIRCUIT SWITCH UNDER PROCESSOR CONTROL WITH INTEGRAL COMSEC AND MULTIPLEX EQUIPMENT. AN/TTC

Compact Circuit Preprocesses Accelerometer Output

NASA Technical Reports Server (NTRS)

Bozeman, Richard J., Jr.

1993-01-01

Compact electronic circuit transfers dc power to, and preprocesses ac output of, accelerometer and associated preamplifier. Incorporated into accelerometer case during initial fabrication or retrofit onto commercial accelerometer. Made of commercial integrated circuits and other conventional components; made smaller by use of micrologic and surface-mount technology.

Easy-to-Implement Project Integrates Basic Electronics and Computer Programming

ERIC Educational Resources Information Center

Johnson, Richard; Shackelford, Ray

2008-01-01

The activities described in this article give students excellent experience with both computer programming and basic electronics. During the activities, students will work in small groups, using a BASIC Stamp development board to fabricate digital circuits and PBASIC to write program code that will control the circuits they have built. The…

Carbon nanotube-based three-dimensional monolithic optoelectronic integrated system

NASA Astrophysics Data System (ADS)

Liu, Yang; Wang, Sheng; Liu, Huaping; Peng, Lian-Mao

2017-06-01

Single material-based monolithic optoelectronic integration with complementary metal oxide semiconductor-compatible signal processing circuits is one of the most pursued approaches in the post-Moore era to realize rapid data communication and functional diversification in a limited three-dimensional space. Here, we report an electrically driven carbon nanotube-based on-chip three-dimensional optoelectronic integrated circuit. We demonstrate that photovoltaic receivers, electrically driven transmitters and on-chip electronic circuits can all be fabricated using carbon nanotubes via a complementary metal oxide semiconductor-compatible low-temperature process, providing a seamless integration platform for realizing monolithic three-dimensional optoelectronic integrated circuits with diversified functionality such as the heterogeneous AND gates. These circuits can be vertically scaled down to sub-30 nm and operates in photovoltaic mode at room temperature. Parallel optical communication between functional layers, for example, bottom-layer digital circuits and top-layer memory, has been demonstrated by mapping data using a 2 × 2 transmitter/receiver array, which could be extended as the next generation energy-efficient signal processing paradigm.

Power control electronics for cryogenic instrumentation

NASA Technical Reports Server (NTRS)

Ray, Biswajit; Gerber, Scott S.; Patterson, Richard L.; Myers, Ira T.

1995-01-01

In order to achieve a high-efficiency high-density cryogenic instrumentation system, the power processing electronics should be placed in the cold environment along with the sensors and signal-processing electronics. The typical instrumentation system requires low voltage dc usually obtained from processing line frequency ac power. Switch-mode power conversion topologies such as forward, flyback, push-pull, and half-bridge are used for high-efficiency power processing using pulse-width modulation (PWM) or resonant control. This paper presents several PWM and multiresonant power control circuits, implemented using commercially available CMOS and BiCMOS integrated circuits, and their performance at liquid-nitrogen temperature (77 K) as compared to their room temperature (300 K) performance. The operation of integrated circuits at cryogenic temperatures results in an improved performance in terms of increased speed, reduced latch-up susceptibility, reduced leakage current, and reduced thermal noise. However, the switching noise increased at 77 K compared to 300 K. The power control circuits tested in the laboratory did successfully restart at 77 K.

Integration and test of high-speed transmitter electronics for free-space laser communications

NASA Technical Reports Server (NTRS)

Soni, Nitin J.; Lizanich, Paul J.

1994-01-01

The NASA Lewis Research Center in Cleveland, Ohio, has developed the electronics for a free-space, direct-detection laser communications system demonstration. Under the High-Speed Laser Integrated Terminal Electronics (Hi-LITE) Project, NASA Lewis has built a prototype full-duplex, dual-channel electronics transmitter and receiver operating at 325 megabit S per second (Mbps) per channel and using quaternary pulse-position modulation (QPPM). This paper describes the integration and testing of the transmitter portion for future application in free-space, direct-detection laser communications. A companion paper reviews the receiver portion of the prototype electronics. Minor modifications to the transmitter were made since the initial report on the entire system, and this paper addresses them. The digital electronics are implemented in gallium arsenide integrated circuits mounted on prototype boards. The fabrication and implementation issues related to these high-speed devices are discussed. The transmitter's test results are documented, and its functionality is verified by exercising all modes of operation. Various testing issues pertaining to high-speed circuits are addressed. A description of the transmitter electronics packaging concludes the paper.

Instrument For Simulation Of Piezoelectric Transducers

NASA Technical Reports Server (NTRS)

Mcnichol, Randal S.

1996-01-01

Electronic instrument designed to simulate dynamic output of integrated-circuit piezoelectric acceleration or pressure transducer. Operates in conjunction with external signal-conditioning circuit, generating square-wave signal of known amplitude for use in calibrating signal-conditioning circuit. Instrument also useful as special-purpose square-wave generator in other applications.

Arrays of Carbon Nanotubes as RF Filters in Waveguides

NASA Technical Reports Server (NTRS)

Hoppe, Daniel; Hunt, Brian; Hoenk, Michael; Noca, Flavio; Xu, Jimmy

2003-01-01

Brushlike arrays of carbon nanotubes embedded in microstrip waveguides provide highly efficient (high-Q) mechanical resonators that will enable ultraminiature radio-frequency (RF) integrated circuits. In its basic form, this invention is an RF filter based on a carbon nanotube array embedded in a microstrip (or coplanar) waveguide, as shown in Figure 1. In addition, arrays of these nanotube-based RF filters can be used as an RF filter bank. Applications of this new nanotube array device include a variety of communications and signal-processing technologies. High-Q resonators are essential for stable, low-noise communications, and radar applications. Mechanical oscillators can exhibit orders of magnitude higher Qs than electronic resonant circuits, which are limited by resistive losses. This has motivated the development of a variety of mechanical resonators, including bulk acoustic wave (BAW) resonators, surface acoustic wave (SAW) resonators, and Si and SiC micromachined resonators (known as microelectromechanical systems or MEMS). There is also a strong push to extend the resonant frequencies of these oscillators into the GHz regime of state-of-the-art electronics. Unfortunately, the BAW and SAW devices tend to be large and are not easily integrated into electronic circuits. MEMS structures have been integrated into circuits, but efforts to extend MEMS resonant frequencies into the GHz regime have been difficult because of scaling problems with the capacitively-coupled drive and readout. In contrast, the proposed devices would be much smaller and hence could be more readily incorporated into advanced RF (more specifically, microwave) integrated circuits.

Smart Power: New power integrated circuit technologies and their applications

NASA Astrophysics Data System (ADS)

Kuivalainen, Pekka; Pohjonen, Helena; Yli-Pietilae, Timo; Lenkkeri, Jaakko

1992-05-01

Power Integrated Circuits (PIC) is one of the most rapidly growing branches of the semiconductor technology. The PIC markets has been forecast to grow from 660 million dollars in 1990 to 1658 million dollars in 1994. It has even been forecast that at the end of the 1990's the PIC markets would correspond to the value of the whole semiconductor production in 1990. Automotive electronics will play the leading role in the development of the standard PIC's. Integrated motor drivers (36 V/4 A), smart integrated switches (60 V/30 A), solenoid drivers, integrated switch-mode power supplies and regulators are the latest standard devices of the PIC manufactures. ASIC (Application Specific Integrated Circuits) PIC solutions are needed for the same reasons as other ASIC devices: there are no proper standard devices, a company has a lot of application knowhow, which should be kept inside the company, the size of the product must be reduced, and assembly costs are wished to be reduced by decreasing the number of discrete devices. During the next few years the most probable ASIC PIC applications in Finland will be integrated solenoid and motor drivers, an integrated electronic lamp ballast circuit and various sensor interface circuits. Application of the PIC technologies to machines and actuators will strongly be increased all over the world. This means that various PIC's, either standard PIC's or full custom ASIC circuits, will appear in many products which compete with the corresponding Finnish products. Therefore the development of the PIC technologies must be followed carefully in order to immediately be able to apply the latest development in the smart power technologies and their design methods.

Nanophotonic integrated circuits from nanoresonators grown on silicon.

PubMed

Chen, Roger; Ng, Kar Wei; Ko, Wai Son; Parekh, Devang; Lu, Fanglu; Tran, Thai-Truong D; Li, Kun; Chang-Hasnain, Connie

2014-07-07

Harnessing light with photonic circuits promises to catalyse powerful new technologies much like electronic circuits have in the past. Analogous to Moore's law, complexity and functionality of photonic integrated circuits depend on device size and performance scale. Semiconductor nanostructures offer an attractive approach to miniaturize photonics. However, shrinking photonics has come at great cost to performance, and assembling such devices into functional photonic circuits has remained an unfulfilled feat. Here we demonstrate an on-chip optical link constructed from InGaAs nanoresonators grown directly on a silicon substrate. Using nanoresonators, we show a complete toolkit of circuit elements including light emitters, photodetectors and a photovoltaic power supply. Devices operate with gigahertz bandwidths while consuming subpicojoule energy per bit, vastly eclipsing performance of prior nanostructure-based optoelectronics. Additionally, electrically driven stimulated emission from an as-grown nanostructure is presented for the first time. These results reveal a roadmap towards future ultradense nanophotonic integrated circuits.

International Conference on Integrated Optical Circuit Engineering, 1st, Cambridge, MA, October 23-25, 1984, Proceedings

NASA Astrophysics Data System (ADS)

Ostrowsky, D. B.; Sriram, S.

Aspects of waveguide technology are explored, taking into account waveguide fabrication techniques in GaAs/GaAlAs, the design and fabrication of AlGaAs/GaAs phase couplers for optical integrated circuit applications, ion implanted GaAs integrated optics fabrication technology, a direct writing electron beam lithography based process for the realization of optoelectronic integrated circuits, and advances in the development of semiconductor integrated optical circuits for telecommunications. Other subjects examined are related to optical signal processing, optical switching, and questions of optical bistability and logic. Attention is given to acousto-optic techniques in integrated optics, acousto-optic Bragg diffraction in proton exchanged waveguides, optical threshold logic architectures for hybrid binary/residue processors, integrated optical modulation and switching, all-optic logic devices for waveguide optics, optoelectronic switching, high-speed photodetector switching, and a mechanical optical switch.

500 C Electronic Packaging and Dielectric Materials for High Temperature Applications

NASA Technical Reports Server (NTRS)

Chen, Liang-yu; Neudeck, Philip G.; Spry, David J.; Beheim, Glenn M.; Hunter, Gary W.

2016-01-01

High-temperature environment operable sensors and electronics are required for exploring the inner solar planets and distributed control of next generation aeronautical engines. Various silicon carbide (SiC) high temperature sensors, actuators, and electronics have been demonstrated at and above 500C. A compatible packaging system is essential for long-term testing and application of high temperature electronics and sensors. High temperature passive components are also necessary for high temperature electronic systems. This talk will discuss ceramic packaging systems developed for high temperature electronics, and related testing results of SiC circuits at 500C and silicon-on-insulator (SOI) integrated circuits at temperatures beyond commercial limit facilitated by these high temperature packaging technologies. Dielectric materials for high temperature multilayers capacitors will also be discussed. High-temperature environment operable sensors and electronics are required for probing the inner solar planets and distributed control of next generation aeronautical engines. Various silicon carbide (SiC) high temperature sensors, actuators, and electronics have been demonstrated at and above 500C. A compatible packaging system is essential for long-term testing and eventual applications of high temperature electronics and sensors. High temperature passive components are also necessary for high temperature electronic systems. This talk will discuss ceramic packaging systems developed for high electronics and related testing results of SiC circuits at 500C and silicon-on-insulator (SOI) integrated circuits at temperatures beyond commercial limit facilitated by high temperature packaging technologies. Dielectric materials for high temperature multilayers capacitors will also be discussed.

ELECTRONIC INTEGRATING CIRCUIT

DOEpatents

Englemann, R.H.

1963-08-20

An electronic integrating circuit using a transistor with a capacitor connected between the emitter and collector through which the capacitor discharges at a rate proportional to the input current at the base is described. Means are provided for biasing the base with an operating bias and for applying a voltage pulse to the capacitor for charging to an initial voltage. A current dividing diode is connected between the base and emitter of the transistor, and signal input terminal means are coupled to the juncture of the capacitor and emitter and to the base of the transistor. At the end of the integration period, the residual voltage on said capacitor is less by an amount proportional to the integral of the input signal. Either continuous or intermittent periods of integration are provided. (AEC)

Silicon/III-V laser with super-compact diffraction grating for WDM applications in electronic-photonic integrated circuits.

PubMed

Wang, Yadong; Wei, Yongqiang; Huang, Yingyan; Tu, Yongming; Ng, Doris; Lee, Cheewei; Zheng, Yunan; Liu, Boyang; Ho, Seng-Tiong

2011-01-31

We have demonstrated a heterogeneously integrated III-V-on-Silicon laser based on an ultra-large-angle super-compact grating (SCG). The SCG enables single-wavelength operation due to its high-spectral-resolution aberration-free design, enabling wavelength division multiplexing (WDM) applications in Electronic-Photonic Integrated Circuits (EPICs). The SCG based Si/III-V laser is realized by fabricating the SCG on silicon-on-insulator (SOI) substrate. Optical gain is provided by electrically pumped heterogeneous integrated III-V material on silicon. Single-wavelength lasing at 1550 nm with an output power of over 2 mW and a lasing threshold of around 150 mA were achieved.

Wafer scale millimeter-wave integrated circuits based on epitaxial graphene in high data rate communication.

PubMed

Habibpour, Omid; He, Zhongxia Simon; Strupinski, Wlodek; Rorsman, Niklas; Zirath, Herbert

2017-02-01

In recent years, the demand for high data rate wireless communications has increased dramatically, which requires larger bandwidth to sustain multi-user accessibility and quality of services. This can be achieved at millimeter wave frequencies. Graphene is a promising material for the development of millimeter-wave electronics because of its outstanding electron transport properties. Up to now, due to the lack of high quality material and process technology, the operating frequency of demonstrated circuits has been far below the potential of graphene. Here, we present monolithic integrated circuits based on epitaxial graphene operating at unprecedented high frequencies (80-100 GHz). The demonstrated circuits are capable of encoding/decoding of multi-gigabit-per-second information into/from the amplitude or phase of the carrier signal. The developed fabrication process is scalable to large wafer sizes.

High-Power, High-Frequency Si-Based (SiGe) Transistors Developed

NASA Technical Reports Server (NTRS)

Ponchak, George E.

2002-01-01

Future NASA, DOD, and commercial products will require electronic circuits that have greater functionality and versatility but occupy less space and cost less money to build and integrate than current products. System on a Chip (SOAC), a single semiconductor substrate containing circuits that perform many functions or containing an entire system, is widely recognized as the best technology for achieving low-cost, small-sized systems. Thus, a circuit technology is required that can gather, process, store, and transmit data or communications. Since silicon-integrated circuits are already used for data processing and storage and the infrastructure that supports silicon circuit fabrication is very large, it is sensible to develop communication circuits on silicon so that all the system functions can be integrated onto a single wafer. Until recently, silicon integrated circuits did not function well at the frequencies required for wireless or microwave communications, but with the introduction of small amounts of germanium into the silicon to make silicon-germanium (SiGe) transistors, silicon-based communication circuits are possible. Although microwavefrequency SiGe circuits have been demonstrated, there has been difficulty in obtaining the high power from their transistors that is required for the amplifiers of a transmitter, and many researchers have thought that this could not be done. The NASA Glenn Research Center and collaborators at the University of Michigan have developed SiGe transistors and amplifiers with state-of-the-art output power at microwave frequencies from 8 to 20 GHz. These transistors are fabricated using standard silicon processing and may be integrated with CMOS integrated circuits on a single chip. A scanning electron microscope image of a typical SiGe heterojunction bipolar transistor is shown in the preceding photomicrograph. This transistor achieved a record output power of 550 mW and an associated power-added efficiency of 33 percent at 8.4 GHz, as shown. Record performance was also demonstrated at 12.6 and 18 GHz. Developers have combined these state-of-the-art transistors with transmission lines and micromachined passive circuit components, such as inductors and capacitors, to build multistage amplifiers. Currently, a 1-W, 8.4-GHz power amplifier is being built for NASA deep space communication architectures.

A microfabricated fringing field capacitive pH sensor with an integrated readout circuit

NASA Astrophysics Data System (ADS)

Arefin, Md Shamsul; Bulut Coskun, M.; Alan, Tuncay; Redoute, Jean-Michel; Neild, Adrian; Rasit Yuce, Mehmet

2014-06-01

This work presents a microfabricated fringe-field capacitive pH sensor using interdigitated electrodes and an integrated modulation-based readout circuit. The changes in capacitance of the sensor result from the permittivity changes due to pH variations and are converted to frequency shifts using a crossed-coupled voltage controlled oscillator readout circuit. The shift in resonant frequency of the readout circuit is 30.96 MHz for a change in pH of 1.0-5.0. The sensor can be used for the measurement of low pH levels, such as gastric acid, and can be integrated with electronic pills. The measurement results show high repeatability, low noise, and a stable output.

Reliability Assessment of Critical Electronic Components

DTIC Science & Technology

1992-07-01

Failures FLHP - Full Horse Power FSN - Federal Stock Number I Current IC - Integrated Circuit IPB - Illustrated Parts Breakdown K - Boltzmans Constant L...Classified P - Power PC - Printed Circuit PCB - Printed Circuit Board PGA - Pin Grid Array PPM - Parts Per Million PWB - Printed Wiring Board 0...4-59 4.4.3.2.3 Circuit Brcakers ......................................................... 4-59 4.4.3.2.4 Thermal

Development of Nanomechanical Sensors for Breast Cancer Biomarkers

DTIC Science & Technology

2008-06-01

semiconductor industry in developing large scale integrated circuits at very lost cost can lead to similar breakthroughs in array sensors for biomolecules of...insulated from the serum or buffer. The entire device is mounted onto a semiconductor chip carrier, for easy integration with electronics. Figure 3...Keithley 2400 source meter. The ac modulation and the dc bias are added by a noninverting summing circuit, which is integrated with the preamplifier

Directly writing resistor, inductor and capacitor to composite functional circuits: a super-simple way for alternative electronics.

PubMed

Gao, Yunxia; Li, Haiyan; Liu, Jing

2013-01-01

The current strategies for making electronic devices are generally time, water, material and energy consuming. Here, the direct writing of composite functional circuits through comprehensive use of GaIn10-based liquid metal inks and matching material is proposed and investigated, which is a rather easy going and cost effective electronics fabrication way compared with the conventional approaches. Owing to its excellent adhesion and electrical properties, the liquid metal ink was demonstrated as a generalist in directly making various basic electronic components such as planar resistor, inductor and capacitor or their combination and thus composing circuits with expected electrical functions. For a precise control of the geometric sizes of the writing, a mask with a designed pattern was employed and demonstrated. Mechanisms for justifying the chemical components of the inks and the magnitudes of the target electronic elements so as to compose various practical circuits were disclosed. Fundamental tests on the electrical components including capacitor and inductor directly written on paper with working time up to 48 h and elevated temperature demonstrated their good stability and potential widespread adaptability especially when used in some high frequency circuits. As the first proof-of-concept experiment, a typical functional oscillating circuit including an integrated chip of 74HC04 with a supply voltage of 5 V, a capacitor of 10 nF and two resistors of 5 kΩ and 1 kΩ respectively was directly composed on paper through integrating specific electrical elements together, which presented an oscillation frequency of 8.8 kHz. The present method significantly extends the roles of the metal ink in recent works serving as only a single electrical conductor or interconnecting wires. It opens the way for directly writing out complex functional circuits or devices on different substrates. Such circuit composition strategy has generalized purpose and can be extended to more areas, even daily pervasive electronics.

Directly Writing Resistor, Inductor and Capacitor to Composite Functional Circuits: A Super-Simple Way for Alternative Electronics

PubMed Central

Gao, Yunxia; Li, Haiyan; Liu, Jing

2013-01-01

Background The current strategies for making electronic devices are generally time, water, material and energy consuming. Here, the direct writing of composite functional circuits through comprehensive use of GaIn10-based liquid metal inks and matching material is proposed and investigated, which is a rather easy going and cost effective electronics fabrication way compared with the conventional approaches. Methods Owing to its excellent adhesion and electrical properties, the liquid metal ink was demonstrated as a generalist in directly making various basic electronic components such as planar resistor, inductor and capacitor or their combination and thus composing circuits with expected electrical functions. For a precise control of the geometric sizes of the writing, a mask with a designed pattern was employed and demonstrated. Mechanisms for justifying the chemical components of the inks and the magnitudes of the target electronic elements so as to compose various practical circuits were disclosed. Results Fundamental tests on the electrical components including capacitor and inductor directly written on paper with working time up to 48 h and elevated temperature demonstrated their good stability and potential widespread adaptability especially when used in some high frequency circuits. As the first proof-of-concept experiment, a typical functional oscillating circuit including an integrated chip of 74HC04 with a supply voltage of 5 V, a capacitor of 10 nF and two resistors of 5 kΩ and 1 kΩ respectively was directly composed on paper through integrating specific electrical elements together, which presented an oscillation frequency of 8.8 kHz. Conclusions The present method significantly extends the roles of the metal ink in recent works serving as only a single electrical conductor or interconnecting wires. It opens the way for directly writing out complex functional circuits or devices on different substrates. Such circuit composition strategy has generalized purpose and can be extended to more areas, even daily pervasive electronics. PMID:23936349

Computer aided design of monolithic microwave and millimeter wave integrated circuits and subsystems

NASA Astrophysics Data System (ADS)

Ku, Walter H.

1989-05-01

The objectives of this research are to develop analytical and computer aided design techniques for monolithic microwave and millimeter wave integrated circuits (MMIC and MIMIC) and subsystems and to design and fabricate those ICs. Emphasis was placed on heterojunction-based devices, especially the High Electron Mobility Transition (HEMT), for both low noise and medium power microwave and millimeter wave applications. Circuits to be considered include monolithic low noise amplifiers, power amplifiers, and distributed and feedback amplifiers. Interactive computer aided design programs were developed, which include large signal models of InP MISFETs and InGaAs HEMTs. Further, a new unconstrained optimization algorithm POSM was developed and implemented in the general Analysis and Design program for Integrated Circuit (ADIC) for assistance in the design of largesignal nonlinear circuits.

47 CFR 15.103 - Exempted devices.

Code of Federal Regulations, 2011 CFR

2011-10-01

... exclusively as an electronic control or power system utilized by a public utility or in an industrial plant... circuit to convert the signal to the format required (e.g., an integrated circuit for analog to digital...

47 CFR 15.103 - Exempted devices.

Code of Federal Regulations, 2010 CFR

2010-10-01

... exclusively as an electronic control or power system utilized by a public utility or in an industrial plant... circuit to convert the signal to the format required (e.g., an integrated circuit for analog to digital...

47 CFR 15.103 - Exempted devices.

Code of Federal Regulations, 2013 CFR

2013-10-01

... exclusively as an electronic control or power system utilized by a public utility or in an industrial plant... circuit to convert the signal to the format required (e.g., an integrated circuit for analog to digital...

47 CFR 15.103 - Exempted devices.

Code of Federal Regulations, 2014 CFR

2014-10-01

... exclusively as an electronic control or power system utilized by a public utility or in an industrial plant... circuit to convert the signal to the format required (e.g., an integrated circuit for analog to digital...

47 CFR 15.103 - Exempted devices.

Code of Federal Regulations, 2012 CFR

2012-10-01

... exclusively as an electronic control or power system utilized by a public utility or in an industrial plant... circuit to convert the signal to the format required (e.g., an integrated circuit for analog to digital...

Product assurance technology for custom LSI/VLSI electronics

NASA Technical Reports Server (NTRS)

Buehler, M. G.; Blaes, B. R.; Jennings, G. A.; Moore, B. T.; Nixon, R. H.; Pina, C. A.; Sayah, H. R.; Sievers, M. W.; Stahlberg, N. F.

1985-01-01

The technology for obtaining custom integrated circuits from CMOS-bulk silicon foundries using a universal set of layout rules is presented. The technical efforts were guided by the requirement to develop a 3 micron CMOS test chip for the Combined Release and Radiation Effects Satellite (CRRES). This chip contains both analog and digital circuits. The development employed all the elements required to obtain custom circuits from silicon foundries, including circuit design, foundry interfacing, circuit test, and circuit qualification.

48 CFR 202.101 - Definitions.

Code of Federal Regulations, 2014 CFR

2014-10-01

... the defense agencies. Electronic part means an integrated circuit, a discrete electronic component... electronic part means an unlawful or unauthorized reproduction, substitution, or alteration that has been knowingly mismarked, misidentified, or otherwise misrepresented to be an authentic, unmodified electronic...

Chemical Processing of Electrons and Holes.

ERIC Educational Resources Information Center

Anderson, Timothy J.

1990-01-01

Presents a synopsis of four lectures given in an elective senior-level electronic material processing course to introduce solid state electronics. Provides comparisons of a large scale chemical processing plant and an integrated circuit. (YP)

An open-source laser electronics suite

NASA Astrophysics Data System (ADS)

Pisenti, Neal C.; Reschovsky, Benjamin J.; Barker, Daniel S.; Restelli, Alessandro; Campbell, Gretchen K.

2016-05-01

We present an integrated set of open-source electronics for controlling external-cavity diode lasers and other instruments in the laboratory. The complete package includes a low-noise circuit for driving high-voltage piezoelectric actuators, an ultra-stable current controller based on the design of, and a high-performance, multi-channel temperature controller capable of driving thermo-electric coolers or resistive heaters. Each circuit (with the exception of the temperature controller) is designed to fit in a Eurocard rack equipped with a low-noise linear power supply capable of driving up to 5 A at +/- 15 V. A custom backplane allows signals to be shared between modules, and a digital communication bus makes the entire rack addressable by external control software over TCP/IP. The modular architecture makes it easy for additional circuits to be designed and integrated with existing electronics, providing a low-cost, customizable alternative to commercial systems without sacrificing performance.

Small, Optically-Driven Power Source

NASA Technical Reports Server (NTRS)

Cockrum, Richard H.; Wang, Ke-Li J.

1988-01-01

Power transmitted along fiber-optic cables. Transmitted as infrared light along fiber-optic cable, converted to electricity to supply small electronic circuit. Power source and circuit remains electrically isolated from each other for safety or reduces electromagnetic interference. Array of diodes made by standard integrated-circuit techniques and packaged for mounting at end of fiber-optic cable.

Inexpensive robots used to teach dc circuits and electronics

NASA Astrophysics Data System (ADS)

Sidebottom, David L.

2017-05-01

This article describes inexpensive, autonomous robots, built without microprocessors, used in a college-level introductory physics laboratory course to motivate student learning of dc circuits. Detailed circuit descriptions are provided as well as a week-by-week course plan that can guide students from elementary dc circuits, through Kirchhoff's laws, and into simple analog integrated circuits with the motivational incentive of building an autonomous robot that can compete with others in a public arena.

Wafer scale millimeter-wave integrated circuits based on epitaxial graphene in high data rate communication

PubMed Central

Habibpour, Omid; He, Zhongxia Simon; Strupinski, Wlodek; Rorsman, Niklas; Zirath, Herbert

2017-01-01

In recent years, the demand for high data rate wireless communications has increased dramatically, which requires larger bandwidth to sustain multi-user accessibility and quality of services. This can be achieved at millimeter wave frequencies. Graphene is a promising material for the development of millimeter-wave electronics because of its outstanding electron transport properties. Up to now, due to the lack of high quality material and process technology, the operating frequency of demonstrated circuits has been far below the potential of graphene. Here, we present monolithic integrated circuits based on epitaxial graphene operating at unprecedented high frequencies (80–100 GHz). The demonstrated circuits are capable of encoding/decoding of multi-gigabit-per-second information into/from the amplitude or phase of the carrier signal. The developed fabrication process is scalable to large wafer sizes. PMID:28145513

Radiation Testing and Evaluation Issues for Modern Integrated Circuits

NASA Technical Reports Server (NTRS)

LaBel, Kenneth A.; Cohn, Lew M.

2005-01-01

Abstract. Changes in modern integrated circuit (IC) technologies have modified the way we approach and conduct radiation tolerance and testing of electronics. These changes include scaling of geometries, new materials, new packaging technologies, and overall speed and device complexity challenges. In this short course section, we will identify and discuss these issues as they impact radiation testing, modeling, and effects mitigation of modern integrated circuits. The focus will be on CMOS-based technologies, however, other high performance technologies will be discussed where appropriate. The effects of concern will be: Single-Event Effects (SEE) and steady state total ionizing dose (TID) IC response. However, due to the growing use of opto-electronics in space systems issues concerning displacement damage testing will also be considered. This short course section is not intended to provide detailed "how-to-test" information, but simply provide a snapshot of current challenges and some of the approaches being considered.

Assembling surface mounted components on ink-jet printed double sided paper circuit board.

PubMed

Andersson, Henrik A; Manuilskiy, Anatoliy; Haller, Stefan; Hummelgård, Magnus; Sidén, Johan; Hummelgård, Christine; Olin, Håkan; Nilsson, Hans-Erik

2014-03-07

Printed electronics is a rapidly developing field where many components can already be manufactured on flexible substrates by printing or by other high speed manufacturing methods. However, the functionality of even the most inexpensive microcontroller or other integrated circuit is, at the present time and for the foreseeable future, out of reach by means of fully printed components. Therefore, it is of interest to investigate hybrid printed electronics, where regular electrical components are mounted on flexible substrates to achieve high functionality at a low cost. Moreover, the use of paper as a substrate for printed electronics is of growing interest because it is an environmentally friendly and renewable material and is, additionally, the main material used for many packages in which electronics functionalities could be integrated. One of the challenges for such hybrid printed electronics is the mounting of the components and the interconnection between layers on flexible substrates with printed conductive tracks that should provide as low a resistance as possible while still being able to be used in a high speed manufacturing process. In this article, several conductive adhesives are evaluated as well as soldering for mounting surface mounted components on a paper circuit board with ink-jet printed tracks and, in addition, a double sided Arduino compatible circuit board is manufactured and programmed.

SEM analysis of ionizing radiation effects in linear integrated circuits. [Scanning Electron Microscope

NASA Technical Reports Server (NTRS)

Stanley, A. G.; Gauthier, M. K.

1977-01-01

A successful diagnostic technique was developed using a scanning electron microscope (SEM) as a precision tool to determine ionization effects in integrated circuits. Previous SEM methods radiated the entire semiconductor chip or major areas. The large area exposure methods do not reveal the exact components which are sensitive to radiation. To locate these sensitive components a new method was developed, which consisted in successively irradiating selected components on the device chip with equal doses of electrons /10 to the 6th rad (Si)/, while the whole device was subjected to representative bias conditions. A suitable device parameter was measured in situ after each successive irradiation with the beam off.

SiC Integrated Circuits for Power Device Drivers Able to Operate in Harsh Environments

NASA Astrophysics Data System (ADS)

Godignon, P.; Alexandru, M.; Banu, V.; Montserrat, J.; Jorda, X.; Vellvehi, M.; Schmidt, B.; Michel, P.; Millan, J.

2014-08-01

The currently developed SiC electronic devices are more robust to high temperature operation and radiation exposure damage than correspondingly rated Si ones. In order to integrate the existent SiC high power and high temperature electronics into more complex systems, a SiC integrated circuit (IC) technology capable of operation at temperatures substantially above the conventional ones is required. Therefore, this paper is a step towards the development of ICs-control electronics that have to attend the harsh environment power applications. Concretely, we present the development of SiC MESFET-based digital circuitry, able to integrate gate driver for SiC power devices. Furthermore, a planar lateral power MESFET is developed with the aim of its co-integration on the same chip with the previously mentioned SiC digital ICs technology. And finally, experimental results on SiC Schottky-gated devices irradiated with protons and electrons are presented. This development is based on the Tungsten-Schottky interface technology used for the fabrication of stable SiC Schottky diodes for the European Space Agency Mission BepiColombo.

Integrated Circuit Stellar Magnitude Simulator

ERIC Educational Resources Information Center

Blackburn, James A.

1978-01-01

Describes an electronic circuit which can be used to demonstrate the stellar magnitude scale. Six rectangular light-emitting diodes with independently adjustable duty cycles represent stars of magnitudes 1 through 6. Experimentally verifies the logarithmic response of the eye. (Author/GA)

Apparatus for Teaching Physics

ERIC Educational Resources Information Center

Gottlieb, Herbert H., Ed.

1977-01-01

Describes an electronic digital counter, a speed-of-light experiment using a television, a simple out-of-circuit method for determining if a transistor is made of silicon or germanium, and the use of dry cells to power TTL integrated circuits. (MLH)

Deterministic Integration of Quantum Dots into on-Chip Multimode Interference Beamsplitters Using in Situ Electron Beam Lithography.

PubMed

Schnauber, Peter; Schall, Johannes; Bounouar, Samir; Höhne, Theresa; Park, Suk-In; Ryu, Geun-Hwan; Heindel, Tobias; Burger, Sven; Song, Jin-Dong; Rodt, Sven; Reitzenstein, Stephan

2018-04-11

The development of multinode quantum optical circuits has attracted great attention in recent years. In particular, interfacing quantum-light sources, gates, and detectors on a single chip is highly desirable for the realization of large networks. In this context, fabrication techniques that enable the deterministic integration of preselected quantum-light emitters into nanophotonic elements play a key role when moving forward to circuits containing multiple emitters. Here, we present the deterministic integration of an InAs quantum dot into a 50/50 multimode interference beamsplitter via in situ electron beam lithography. We demonstrate the combined emitter-gate interface functionality by measuring triggered single-photon emission on-chip with g (2) (0) = 0.13 ± 0.02. Due to its high patterning resolution as well as spectral and spatial control, in situ electron beam lithography allows for integration of preselected quantum emitters into complex photonic systems. Being a scalable single-step approach, it paves the way toward multinode, fully integrated quantum photonic chips.

An electron-beam dose deposition experiment: TIGER 1-D simulation code versus thermoluminescent dosimetry

NASA Astrophysics Data System (ADS)

Murrill, Steven R.; Tipton, Charles W.; Self, Charles T.

1991-03-01

The dose absorbed in an integrated circuit (IC) die exposed to a pulse of low-energy electrons is a strong function of both electron energy and surrounding packaging materials. This report describes an experiment designed to measure how well the Integrated TIGER Series one-dimensional (1-D) electron transport simulation program predicts dose correction factors for a state-of-the-art IC package and package/printed circuit board (PCB) combination. These derived factors are compared with data obtained experimentally using thermoluminescent dosimeters (TLD's) and the FX-45 flash x-ray machine (operated in electron-beam (e-beam) mode). The results of this experiment show that the TIGER 1-D simulation code can be used to accurately predict FX-45 e-beam dose deposition correction factors for reasonably complex IC packaging configurations.

Discrete Semiconductor Device Reliability

DTIC Science & Technology

1988-03-25

array or alphanumeric display. "--" indicates unknown diode count. Voc Open circuit voltage for photovoltaic modules . indicates unknown. Isc Short... circuit current for photovoltaic modules . "--" indicates unknown. Number Tested Quantity of parts under the described test or field conditions for that...information pertaining to electronic systems and parts used therein. The present scope includes integrated circuits , hybrids, discrete semiconductors

Total-dose radiation effects data for semiconductor devices. 1985 supplement. Volume 2, part A

NASA Technical Reports Server (NTRS)

Martin, K. E.; Gauthier, M. K.; Coss, J. R.; Dantas, A. R. V.; Price, W. E.

1986-01-01

Steady-state, total-dose radiation test data, are provided in graphic format for use by electronic designers and other personnel using semiconductor devices in a radiation environment. The data were generated by JPL for various NASA space programs. This volume provides data on integrated circuits. The data are presented in graphic, tabular, and/or narrative format, depending on the complexity of the integrated circuit. Most tests were done using the JPL or Boeing electron accelerator (Dynamitron) which provides a steady-state 2.5 MeV electron beam. However, some radiation exposures were made with a Cobalt-60 gamma ray source, the results of which should be regarded as only an approximate measure of the radiation damage that would be incurred by an equivalent electron dose.

Materials and fabrication sequences for water soluble silicon integrated circuits at the 90 nm node

NASA Astrophysics Data System (ADS)

Yin, Lan; Bozler, Carl; Harburg, Daniel V.; Omenetto, Fiorenzo; Rogers, John A.

2015-01-01

Tungsten interconnects in silicon integrated circuits built at the 90 nm node with releasable configurations on silicon on insulator wafers serve as the basis for advanced forms of water-soluble electronics. These physically transient systems have potential uses in applications that range from temporary biomedical implants to zero-waste environmental sensors. Systematic experimental studies and modeling efforts reveal essential aspects of electrical performance in field effect transistors and complementary ring oscillators with as many as 499 stages. Accelerated tests reveal timescales for dissolution of the various constituent materials, including tungsten, silicon, and silicon dioxide. The results demonstrate that silicon complementary metal-oxide-semiconductor circuits formed with tungsten interconnects in foundry-compatible fabrication processes can serve as a path to high performance, mass-produced transient electronic systems.

Hardening Logic Encryption against Key Extraction Attacks with Circuit Camouflage

DTIC Science & Technology

2017-03-01

camouflage; obfuscation; SAT; key extraction; reverse engineering; security; trusted electronics Introduction Integrated Circuit (IC) designs are...Encryption Algorithms”, Hardware Oriented Security and Trust , 2015. 3. Rajendran J., Pino, Y., Sinanoglu, O., Karri, R., “Security Analysis of Logic

Organic printed photonics: From microring lasers to integrated circuits

PubMed Central

Zhang, Chuang; Zou, Chang-Ling; Zhao, Yan; Dong, Chun-Hua; Wei, Cong; Wang, Hanlin; Liu, Yunqi; Guo, Guang-Can; Yao, Jiannian; Zhao, Yong Sheng

2015-01-01

A photonic integrated circuit (PIC) is the optical analogy of an electronic loop in which photons are signal carriers with high transport speed and parallel processing capability. Besides the most frequently demonstrated silicon-based circuits, PICs require a variety of materials for light generation, processing, modulation, and detection. With their diversity and flexibility, organic molecular materials provide an alternative platform for photonics; however, the versatile fabrication of organic integrated circuits with the desired photonic performance remains a big challenge. The rapid development of flexible electronics has shown that a solution printing technique has considerable potential for the large-scale fabrication and integration of microsized/nanosized devices. We propose the idea of soft photonics and demonstrate the function-directed fabrication of high-quality organic photonic devices and circuits. We prepared size-tunable and reproducible polymer microring resonators on a wafer-scale transparent and flexible chip using a solution printing technique. The printed optical resonator showed a quality (Q) factor higher than 4 × 105, which is comparable to that of silicon-based resonators. The high material compatibility of this printed photonic chip enabled us to realize low-threshold microlasers by doping organic functional molecules into a typical photonic device. On an identical chip, this construction strategy allowed us to design a complex assembly of one-dimensional waveguide and resonator components for light signal filtering and optical storage toward the large-scale on-chip integration of microscopic photonic units. Thus, we have developed a scheme for soft photonic integration that may motivate further studies on organic photonic materials and devices. PMID:26601256

Organic printed photonics: From microring lasers to integrated circuits.

PubMed

Zhang, Chuang; Zou, Chang-Ling; Zhao, Yan; Dong, Chun-Hua; Wei, Cong; Wang, Hanlin; Liu, Yunqi; Guo, Guang-Can; Yao, Jiannian; Zhao, Yong Sheng

2015-09-01

A photonic integrated circuit (PIC) is the optical analogy of an electronic loop in which photons are signal carriers with high transport speed and parallel processing capability. Besides the most frequently demonstrated silicon-based circuits, PICs require a variety of materials for light generation, processing, modulation, and detection. With their diversity and flexibility, organic molecular materials provide an alternative platform for photonics; however, the versatile fabrication of organic integrated circuits with the desired photonic performance remains a big challenge. The rapid development of flexible electronics has shown that a solution printing technique has considerable potential for the large-scale fabrication and integration of microsized/nanosized devices. We propose the idea of soft photonics and demonstrate the function-directed fabrication of high-quality organic photonic devices and circuits. We prepared size-tunable and reproducible polymer microring resonators on a wafer-scale transparent and flexible chip using a solution printing technique. The printed optical resonator showed a quality (Q) factor higher than 4 × 10(5), which is comparable to that of silicon-based resonators. The high material compatibility of this printed photonic chip enabled us to realize low-threshold microlasers by doping organic functional molecules into a typical photonic device. On an identical chip, this construction strategy allowed us to design a complex assembly of one-dimensional waveguide and resonator components for light signal filtering and optical storage toward the large-scale on-chip integration of microscopic photonic units. Thus, we have developed a scheme for soft photonic integration that may motivate further studies on organic photonic materials and devices.

The Induction of Chaos in Electronic Circuits Final Report-October 1, 2001

DOE Office of Scientific and Technical Information (OSTI.GOV)

R.M.Wheat, Jr.

2003-04-01

This project, now known by the name ''Chaos in Electronic Circuits,'' was originally tasked as a two-year project to examine various ''fault'' or ''non-normal'' operational states of common electronic circuits with some focus on determining the feasibility of exploiting these states. Efforts over the two-year duration of this project have been dominated by the study of the chaotic behavior of electronic circuits. These efforts have included setting up laboratory space and hardware for conducting laboratory tests and experiments, acquiring and developing computer simulation and analysis capabilities, conducting literature surveys, developing test circuitry and computer models to exercise and test ourmore » capabilities, and experimenting with and studying the use of RF injection as a means of inducing chaotic behavior in electronics. An extensive array of nonlinear time series analysis tools have been developed and integrated into a package named ''After Acquisition'' (AA), including capabilities such as Delayed Coordinate Embedding Mapping (DCEM), Time Resolved (3-D) Fourier Transform, and several other phase space re-creation methods. Many computer models have been developed for Spice and for the ATP (Alternative Transients Program), modeling the several working circuits that have been developed for use in the laboratory. And finally, methods of induction of chaos in electronic circuits have been explored.« less

A fully integrated oven controlled microelectromechanical oscillator -- Part I. Design and fabrication

DOE PAGES

Wojciechowski, Kenneth E.; Baker, Michael S.; Clews, Peggy J.; ...

2015-06-24

Our paper reports the design and fabrication of a fully integrated oven controlled microelectromechanical oscillator (OCMO). This paper begins by describing the limits on oscillator frequency stability imposed by the thermal drift and electronic properties (Q, resistance) of both the resonant tank circuit and feedback electronics required to form an electronic oscillator. An OCMO is presented that takes advantage of high thermal isolation and monolithic integration of both micromechanical resonators and electronic circuitry to thermally stabilize or ovenize all the components that comprise an oscillator. This was achieved by developing a processing technique where both silicon-on-insulator complementary metal-oxide-semiconductor (CMOS) circuitrymore » and piezoelectric aluminum nitride, AlN, micromechanical resonators are placed on a suspended platform within a standard CMOS integrated circuit. Operation at microscale sizes achieves high thermal resistances (~10 °C/mW), and hence thermal stabilization of the oscillators at very low-power levels when compared with the state-of-the-art ovenized crystal oscillators, OCXO. This constant resistance feedback circuit is presented that incorporates on platform resistive heaters and temperature sensors to both measure and stabilize the platform temperature. Moreover, the limits on temperature stability of the OCMO platform and oscillator frequency imposed by the gain of the constant resistance feedback loop, placement of the heater and temperature sensing resistors, as well as platform radiative and convective heat losses are investigated.« less

Design of a front-end integrated circuit for 3D acoustic imaging using 2D CMUT arrays.

PubMed

Ciçek, Ihsan; Bozkurt, Ayhan; Karaman, Mustafa

2005-12-01

Integration of front-end electronics with 2D capacitive micromachined ultrasonic transducer (CMUT) arrays has been a challenging issue due to the small element size and large channel count. We present design and verification of a front-end drive-readout integrated circuit for 3D ultrasonic imaging using 2D CMUT arrays. The circuit cell dedicated to a single CMUT array element consists of a high-voltage pulser and a low-noise readout amplifier. To analyze the circuit cell together with the CMUT element, we developed an electrical CMUT model with parameters derived through finite element analysis, and performed both the pre- and postlayout verification. An experimental chip consisting of 4 X 4 array of the designed circuit cells, each cell occupying a 200 X 200 microm2 area, was formed for the initial test studies and scheduled for fabrication in 0.8 microm, 50 V CMOS technology. The designed circuit is suitable for integration with CMUT arrays through flip-chip bonding and the CMUT-on-CMOS process.

Intelligent structures technology

NASA Astrophysics Data System (ADS)

Crawley, Edward F.

1991-07-01

Viewgraphs on intelligent structures technology are presented. Topics covered include: embedding electronics; electrical and mechanical compatibility; integrated circuit chip packaged for embedding; embedding devices within composite structures; test of embedded circuit in G/E coupon; temperature/humidity/bias test; single-chip microcomputer control experiment; and structural shape determination.

Intelligent structures technology

NASA Technical Reports Server (NTRS)

Crawley, Edward F.

1991-01-01

Viewgraphs on intelligent structures technology are presented. Topics covered include: embedding electronics; electrical and mechanical compatibility; integrated circuit chip packaged for embedding; embedding devices within composite structures; test of embedded circuit in G/E coupon; temperature/humidity/bias test; single-chip microcomputer control experiment; and structural shape determination.

Protection of the electronic components of measuring equipment from the X-ray radiation

NASA Astrophysics Data System (ADS)

Perez Vasquez, N. O.; Kostrin, D. K.; Uhov, A. A.

2018-02-01

In this work the effect of X-ray radiation on the operation of integrated circuits of the measurement equipment is discussed. The results of the calculations of a shielding system, allowing using integrated circuits with a high degree of integration in the vicinity of the X-ray source, are shown. The results of the verification of two measurement devices that was used for more than five years in the facility for training and testing of X-ray tubes are presented.

Interfacing spin qubits in quantum dots and donors—hot, dense, and coherent

NASA Astrophysics Data System (ADS)

Vandersypen, L. M. K.; Bluhm, H.; Clarke, J. S.; Dzurak, A. S.; Ishihara, R.; Morello, A.; Reilly, D. J.; Schreiber, L. R.; Veldhorst, M.

2017-09-01

Semiconductor spins are one of the few qubit realizations that remain a serious candidate for the implementation of large-scale quantum circuits. Excellent scalability is often argued for spin qubits defined by lithography and controlled via electrical signals, based on the success of conventional semiconductor integrated circuits. However, the wiring and interconnect requirements for quantum circuits are completely different from those for classical circuits, as individual direct current, pulsed and in some cases microwave control signals need to be routed from external sources to every qubit. This is further complicated by the requirement that these spin qubits currently operate at temperatures below 100 mK. Here, we review several strategies that are considered to address this crucial challenge in scaling quantum circuits based on electron spin qubits. Key assets of spin qubits include the potential to operate at 1 to 4 K, the high density of quantum dots or donors combined with possibilities to space them apart as needed, the extremely long-spin coherence times, and the rich options for integration with classical electronics based on the same technology.

Optical printed circuit board (O-PCB) and VLSI photonic integrated circuits: visions, challenges, and progresses

NASA Astrophysics Data System (ADS)

Lee, El-Hang; Lee, S. G.; O, B. H.; Park, S. G.; Noh, H. S.; Kim, K. H.; Song, S. H.

2006-09-01

A collective overview and review is presented on the original work conducted on the theory, design, fabrication, and in-tegration of micro/nano-scale optical wires and photonic devices for applications in a newly-conceived photonic systems called "optical printed circuit board" (O-PCBs) and "VLSI photonic integrated circuits" (VLSI-PIC). These are aimed for compact, high-speed, multi-functional, intelligent, light-weight, low-energy and environmentally friendly, low-cost, and high-volume applications to complement or surpass the capabilities of electrical PCBs (E-PCBs) and/or VLSI electronic integrated circuit (VLSI-IC) systems. These consist of 2-dimensional or 3-dimensional planar arrays of micro/nano-optical wires and circuits to perform the functions of all-optical sensing, storing, transporting, processing, switching, routing and distributing optical signals on flat modular boards or substrates. The integrated optical devices include micro/nano-scale waveguides, lasers, detectors, switches, sensors, directional couplers, multi-mode interference devices, ring-resonators, photonic crystal devices, plasmonic devices, and quantum devices, made of polymer, silicon and other semiconductor materials. For VLSI photonic integration, photonic crystals and plasmonic structures have been used. Scientific and technological issues concerning the processes of miniaturization, interconnection and integration of these systems as applicable to board-to-board, chip-to-chip, and intra-chip integration, are discussed along with applications for future computers, telecommunications, and sensor-systems. Visions and challenges toward these goals are also discussed.

Calendar of Selected Aeronautical and Space Meetings (Calendrier des Manifestations Aeronautiques et Spatiales (Selection)).

DTIC Science & Technology

1983-01-01

Physique de l’Atmosphire et Environnement terrestre 71 09 - Information, Documentation et Informatique 74 10 - Thimes gin~raux (pluridisciplinaires) et...March Louisiana (US) Fiber Communication Optical Communications IEEE Fibre Optics Electro-Optics 02-08 7-9 March Baden-Baden VDE -IEEE Specialists...Conference on Very Large Electronic Systems VDE (GE) Scale Integrated Circuits Solid State Devices IEEE Integrated Circuits Engineering Design Fabrication

Expedition 18 Station Development Test Objectives (STDO) Session 1

NASA Image and Video Library

2009-02-19

ISS018-E-033816 (19 Feb. 2009) --- Astronaut Michael Fincke, Expedition 18 commander, removes, cleans and replaces electronic test components on a single test card using Component Repair Equipment (CRE-1) hardware in a portable glovebox facility in the Harmony node of the International Space Station. Fincke unsoldered 1 1/2 components from an integrated circuit board and re-soldered new components including an integrated circuit chip.

Expedition 18 Station Development Test Objectives (STDO) Session 1

NASA Image and Video Library

2009-02-19

ISS018-E-033818 (19 Feb. 2009) --- Astronaut Michael Fincke, Expedition 18 commander, removes, cleans and replaces electronic test components on a single test card using Component Repair Equipment (CRE-1) hardware in a portable glovebox facility in the Harmony node of the International Space Station. Fincke unsoldered 1 1/2 components from an integrated circuit board and re-soldered new components including an integrated circuit chip.

Multipurpose silicon photonics signal processor core.

PubMed

Pérez, Daniel; Gasulla, Ivana; Crudgington, Lee; Thomson, David J; Khokhar, Ali Z; Li, Ke; Cao, Wei; Mashanovich, Goran Z; Capmany, José

2017-09-21

Integrated photonics changes the scaling laws of information and communication systems offering architectural choices that combine photonics with electronics to optimize performance, power, footprint, and cost. Application-specific photonic integrated circuits, where particular circuits/chips are designed to optimally perform particular functionalities, require a considerable number of design and fabrication iterations leading to long development times. A different approach inspired by electronic Field Programmable Gate Arrays is the programmable photonic processor, where a common hardware implemented by a two-dimensional photonic waveguide mesh realizes different functionalities through programming. Here, we report the demonstration of such reconfigurable waveguide mesh in silicon. We demonstrate over 20 different functionalities with a simple seven hexagonal cell structure, which can be applied to different fields including communications, chemical and biomedical sensing, signal processing, multiprocessor networks, and quantum information systems. Our work is an important step toward this paradigm.Integrated optical circuits today are typically designed for a few special functionalities and require complex design and development procedures. Here, the authors demonstrate a reconfigurable but simple silicon waveguide mesh with different functionalities.

Ion-beam apparatus and method for analyzing and controlling integrated circuits

DOEpatents

Campbell, A.N.; Soden, J.M.

1998-12-01

An ion-beam apparatus and method for analyzing and controlling integrated circuits are disclosed. The ion-beam apparatus comprises a stage for holding one or more integrated circuits (ICs); a source means for producing a focused ion beam; and a beam-directing means for directing the focused ion beam to irradiate a predetermined portion of the IC for sufficient time to provide an ion-beam-generated electrical input signal to a predetermined element of the IC. The apparatus and method have applications to failure analysis and developmental analysis of ICs and permit an alteration, control, or programming of logic states or device parameters within the IC either separate from or in combination with applied electrical stimulus to the IC for analysis thereof. Preferred embodiments of the present invention including a secondary particle detector and an electron floodgun further permit imaging of the IC by secondary ions or electrons, and allow at least a partial removal or erasure of the ion-beam-generated electrical input signal. 4 figs.

Ion-beam apparatus and method for analyzing and controlling integrated circuits

DOEpatents

Campbell, Ann N.; Soden, Jerry M.

1998-01-01

An ion-beam apparatus and method for analyzing and controlling integrated circuits. The ion-beam apparatus comprises a stage for holding one or more integrated circuits (ICs); a source means for producing a focused ion beam; and a beam-directing means for directing the focused ion beam to irradiate a predetermined portion of the IC for sufficient time to provide an ion-beam-generated electrical input signal to a predetermined element of the IC. The apparatus and method have applications to failure analysis and developmental analysis of ICs and permit an alteration, control, or programming of logic states or device parameters within the IC either separate from or in combination with applied electrical stimulus to the IC for analysis thereof. Preferred embodiments of the present invention including a secondary particle detector and an electron floodgun further permit imaging of the IC by secondary ions or electrons, and allow at least a partial removal or erasure of the ion-beam-generated electrical input signal.

Millimeter-wave and optoelectronic applications of heterostructure integrated circuits

NASA Technical Reports Server (NTRS)

Pavlidis, Dimitris

1991-01-01

The properties are reviewed of heterostructure devices for microwave-monolithic-integrated circuits (MMICs) and optoelectronic integrated circuits (OICs). Specific devices examined include lattice-matched and pseudomorphic InAlAs/InGaAs high-electron mobility transistors (HEMTs), mixer/multiplier diodes, and heterojunction bipolar transistors (HBTs) developed with a number of materials. MMICs are reviewed that can be employed for amplification, mixing, and signal generation, and receiver/transmitter applications are set forth for OICs based on GaAs and InP heterostructure designs. HEMTs, HBTs, and junction-FETs can be utilized in combination with PIN, MSM, and laser diodes to develop novel communication systems based on technologies that combine microwave and photonic capabilities.

Millimeter-wave and optoelectronic applications of heterostructure integrated circuits

NASA Astrophysics Data System (ADS)

Pavlidis, Dimitris

1991-02-01

The properties are reviewed of heterostructure devices for microwave-monolithic-integrated circuits (MMICs) and optoelectronic integrated circuits (OICs). Specific devices examined include lattice-matched and pseudomorphic InAlAs/InGaAs high-electron mobility transistors (HEMTs), mixer/multiplier diodes, and heterojunction bipolar transistors (HBTs) developed with a number of materials. MMICs are reviewed that can be employed for amplification, mixing, and signal generation, and receiver/transmitter applications are set forth for OICs based on GaAs and InP heterostructure designs. HEMTs, HBTs, and junction-FETs can be utilized in combination with PIN, MSM, and laser diodes to develop novel communication systems based on technologies that combine microwave and photonic capabilities.

Heterogeneous integration of low-temperature metal-oxide TFTs

NASA Astrophysics Data System (ADS)

Schuette, Michael L.; Green, Andrew J.; Leedy, Kevin D.; McCandless, Jonathan P.; Jessen, Gregg H.

2017-02-01

The breadth of circuit fabrication opportunities enabled by metal-oxide thin-film transistors (MO-TFTs) is unprecedented. Large-area deposition techniques and high electron mobility are behind their adoption in the display industry, and substrate agnosticism and low process temperatures enabled the present wave of flexible electronics research. Reports of circuits involving complementaryMO-TFTs, oxide-organic hybrid combinations, and even MO-TFTs integrated onto Si LSI back end of line interconnects demonstrate this technology's utility in 2D and 3D monolithic heterogeneous integration (HI). In addition to a brief literature review focused on functional HI between MO-TFTs and a variety of dissimilar active devices, we share progress toward integrating MO-TFTs with compound semiconductor devices, namely GaN HEMTs. A monolithically integrated cascode topology was used to couple a HEMT's >200 V breakdown characteristic with the gate driving characteristic of an IGZO TFT, effectively shifting the HEMT threshold voltage from -3 V to +1 V.

Thermally controlled coupling of a rolled-up microtube integrated with a waveguide on a silicon electronic-photonic integrated circuit.

PubMed

Zhong, Qiuhang; Tian, Zhaobing; Veerasubramanian, Venkat; Dastjerdi, M Hadi Tavakoli; Mi, Zetian; Plant, David V

2014-05-01

We report on the first experimental demonstration of the thermal control of coupling strength between a rolled-up microtube and a waveguide on a silicon electronic-photonic integrated circuit. The microtubes are fabricated by selectively releasing a coherently strained GaAs/InGaAs heterostructure bilayer. The fabricated microtubes are then integrated with silicon waveguides using an abruptly tapered fiber probe. By tuning the gap between the microtube and the waveguide using localized heaters, the microtube-waveguide evanescent coupling is effectively controlled. With heating, the extinction ratio of a microtube whispering-gallery mode changes over an 18 dB range, while the resonant wavelength remains approximately unchanged. Utilizing this dynamic thermal tuning effect, we realize coupling modulation of the microtube integrated with the silicon waveguide at 2 kHz with a heater voltage swing of 0-6 V.

Electrically driven monolithic subwavelength plasmonic interconnect circuits

PubMed Central

Liu, Yang; Zhang, Jiasen; Liu, Huaping; Wang, Sheng; Peng, Lian-Mao

2017-01-01

In the post-Moore era, an electrically driven monolithic optoelectronic integrated circuit (OEIC) fabricated from a single material is pursued globally to enable the construction of wafer-scale compact computing systems with powerful processing capabilities and low-power consumption. We report a monolithic plasmonic interconnect circuit (PIC) consisting of a photovoltaic (PV) cascading detector, Au-strip waveguides, and electrically driven surface plasmon polariton (SPP) sources. These components are fabricated from carbon nanotubes (CNTs) via a CMOS (complementary metal-oxide semiconductor)–compatible doping-free technique in the same feature size, which can be reduced to deep-subwavelength scale (~λ/7 to λ/95, λ = 1340 nm) compared with the 14-nm technique node. An OEIC could potentially be configured as a repeater for data transport because of its “photovoltaic” operation mode to transform SPP energy directly into electricity to drive subsequent electronic circuits. Moreover, chip-scale throughput capability has also been demonstrated by fabricating a 20 × 20 PIC array on a 10 mm × 10 mm wafer. Tailoring photonics for monolithic integration with electronics beyond the diffraction limit opens a new era of chip-level nanoscale electronic-photonic systems, introducing a new path to innovate toward much faster, smaller, and cheaper computing frameworks. PMID:29062890

Optimized structural designs for stretchable silicon integrated circuits.

PubMed

Kim, Dae-Hyeong; Liu, Zhuangjian; Kim, Yun-Soung; Wu, Jian; Song, Jizhou; Kim, Hoon-Sik; Huang, Yonggang; Hwang, Keh-Chih; Zhang, Yongwei; Rogers, John A

2009-12-01

Materials and design strategies for stretchable silicon integrated circuits that use non-coplanar mesh layouts and elastomeric substrates are presented. Detailed experimental and theoretical studies reveal many of the key underlying aspects of these systems. The results shpw, as an example, optimized mechanics and materials for circuits that exhibit maximum principal strains less than 0.2% even for applied strains of up to approximately 90%. Simple circuits, including complementary metal-oxide-semiconductor inverters and n-type metal-oxide-semiconductor differential amplifiers, validate these designs. The results suggest practical routes to high-performance electronics with linear elastic responses to large strain deformations, suitable for diverse applications that are not readily addressed with conventional wafer-based technologies.

Inverter circuits on freestanding flexible substrate using ZnO nanoparticles for cost-efficient electronics

NASA Astrophysics Data System (ADS)

Vidor, Fábio F.; Meyers, Thorsten; Müller, Kathrin; Wirth, Gilson I.; Hilleringmann, Ulrich

2017-11-01

Driven by the Internet of Things (IoT), flexible and transparent smart systems have been intensively researched by the scientific community and by several companies. This technology is already available for consumers in a wide range of innovative products, e.g., flexible displays, radio-frequency identification tags and wearable electronic skins which, for instance, collect and analyze data for medical applications. For these systems, thin-film transistors (TFTs) are the key elements responsible for the driving currents. Solution-based materials such as nanoparticle dispersions avail the fabrication on large-area substrates with high throughput processes. In this study, we discuss the integration of ZnO nanoparticle thin-film transistors and inverter circuits on freestanding polymeric substrates enclosing the main issues concerning the transfer of the integration process from a rigid substrate to a flexible one. The TFTs depict VON between -0.2 and 1 V, ION/IOFF > 104 and field-effect mobility >0.5 cm2 V-1 s-1. Additionally, in order to enhance the transistors and inverters performance, an adaptation on the device configuration, from an inverted coplanar to an inverted staggered setup, was conducted and analyzed. By employing the inverted staggered setup a considerable increase in the contact quality between the semiconductor and the drain and source electrodes was observed. As the integrated devices depict electrical characteristics which enable the fabrication of electronic circuits for the low-cost sector, inverters were fabricated and characterized, evaluating the circuit's gain as function of the applied supply voltage and circuit's geometric ratio.

A Single Chip Automotive Control LSI Using SOI Bipolar Complimentary MOS Double-Diffused MOS

NASA Astrophysics Data System (ADS)

Kawamoto, Kazunori; Mizuno, Shoji; Abe, Hirofumi; Higuchi, Yasushi; Ishihara, Hideaki; Fukumoto, Harutsugu; Watanabe, Takamoto; Fujino, Seiji; Shirakawa, Isao

2001-04-01

Using the example of an air bag controller, a single chip solution for automotive sub-control systems is investigated, by using a technological combination of improved circuits, bipolar complimentary metal oxide silicon double-diffused metal oxide silicon (BiCDMOS) and thick silicon on insulator (SOI). For circuits, an automotive specific reduced instruction set computer (RISC) center processing unit (CPU), and a novel, all integrated system clock generator, dividing digital phase-locked loop (DDPLL) are proposed. For the device technologies, the authors use SOI-BiCDMOS with trench dielectric-isolation (TD) which enables integration of various devices in an integrated circuit (IC) while avoiding parasitic miss operations by ideal isolation. The structures of the SOI layer and TD, are optimized for obtaining desired device characteristics and high electromagnetic interference (EMI) immunity. While performing all the air bag system functions over a wide range of supply voltage, and ambient temperature, the resulting single chip reduces the electronic parts to about a half of those in the conventional air bags. The combination of single chip oriented circuits and thick SOI-BiCDMOS technologies offered in this work is valuable for size reduction and improved reliability of automotive electronic control units (ECUs).

Phased-Array Antenna With Optoelectronic Control Circuits

NASA Technical Reports Server (NTRS)

Kunath, Richard R.; Shalkhauser, Kurt A.; Martzaklis, Konstantinos; Lee, Richard Q.; Downey, Alan N.; Simons, Rainee N.

1995-01-01

Prototype phased-array antenna features control of amplitude and phase at each radiating element. Amplitude- and phase-control signals transmitted on optical fiber to optoelectronic interface circuit (OEIC), then to monolithic microwave integrated circuit (MMIC) at each element. Offers advantages of flexible, rapid electronic steering and shaping of beams. Furthermore, greater number of elements, less overall performance of antenna degraded by malfunction in single element.

Electronics. Module 3: Digital Logic Application. Instructor's Guide.

ERIC Educational Resources Information Center

Carter, Ed; Murphy, Mark

This guide contains instructor's materials for a 10-unit secondary school course on digital logic application. The units are introduction to digital, logic gates, digital integrated circuits, combination logic, flip-flops, counters and shift registers, encoders and decoders, arithmetic circuits, memory, and analog/digital and digital/analog…

Characterization of quantum well structures using a photocathode electron microscope

NASA Technical Reports Server (NTRS)

Spencer, Michael G.; Scott, Craig J.

1989-01-01

Present day integrated circuits pose a challenge to conventional electronic and mechanical test methods. Feature sizes in the submicron and nanometric regime require radical approaches in order to facilitate electrical contact to circuits and devices being tested. In addition, microwave operating frequencies require careful attention to distributed effects when considering the electrical signal paths within and external to the device under test. An alternative testing approach which combines the best of electrical and optical time domain testing is presented, namely photocathode electron microscope quantitative voltage contrast (PEMQVC).

Deterministic Integration of Quantum Dots into on-Chip Multimode Interference Beamsplitters Using in Situ Electron Beam Lithography

NASA Astrophysics Data System (ADS)

Schnauber, Peter; Schall, Johannes; Bounouar, Samir; Höhne, Theresa; Park, Suk-In; Ryu, Geun-Hwan; Heindel, Tobias; Burger, Sven; Song, Jin-Dong; Rodt, Sven; Reitzenstein, Stephan

2018-04-01

The development of multi-node quantum optical circuits has attracted great attention in recent years. In particular, interfacing quantum-light sources, gates and detectors on a single chip is highly desirable for the realization of large networks. In this context, fabrication techniques that enable the deterministic integration of pre-selected quantum-light emitters into nanophotonic elements play a key role when moving forward to circuits containing multiple emitters. Here, we present the deterministic integration of an InAs quantum dot into a 50/50 multi-mode interference beamsplitter via in-situ electron beam lithography. We demonstrate the combined emitter-gate interface functionality by measuring triggered single-photon emission on-chip with $g^{(2)}(0) = 0.13\\pm 0.02$. Due to its high patterning resolution as well as spectral and spatial control, in-situ electron beam lithography allows for integration of pre-selected quantum emitters into complex photonic systems. Being a scalable single-step approach, it paves the way towards multi-node, fully integrated quantum photonic chips.

Defense Industrial Base Assessment: U.S. Integrated Circuit Design and Fabrication Capability

DTIC Science & Technology

2009-05-01

in the U.S for the period 2003-2006, with projections to 2011.6 The resulting draft OTE survey was field tested for accuracy and usability with a...custom application specific integrated circuits (ASICs) to field programmable gate arrays (FPGAs). Companies of all sizes can manufacture these IC...able to design one-time Electronically Programmable Gate Arrays (EPGAs) while nine are able to design Field Programmable Gate Arrays (FPGAs). Eight

The record of electrical and communication engineering conversazione Tohoku University Volume 63, No. 3

NASA Astrophysics Data System (ADS)

1995-05-01

English abstracts contained are from papers authored by the research staff of the Research Institute of Electrical Communication and the departments of Electrical Engineering, Electrical Communications, Electronic Engineering, and Information Engineering, Tohoku University, which originally appeared in scientific journals in 1994. The abstracts are organized under the following disciplines: electromagnetic theory; physics; fundamental theory of information; communication theory and systems; signal and image processing; systems control; computers; artificial intelligence; recording; acoustics and speech; ultrasonic electronics; antenna, propagation, and transmission; optoelectronics and optical communications; quantum electronics; superconducting materials and applications; magnetic materials and magnetics; semiconductors; electronic materials and parts; electronic devices and integrated circuits; electronic circuits; medical electronics and bionics; measurements and applied electronics; electric power; and miscellaneous.

Temperature-Adaptive Circuits on Reconfigurable Analog Arrays

NASA Technical Reports Server (NTRS)

Stoica, Adrian; Zebulum, Ricardo S.; Keymeulen, Didier; Ramesham, Rajeshuni; Neff, Joseph; Katkoori, Srinivas

2006-01-01

Demonstration of a self-reconfigurable Integrated Circuit (IC) that would operate under extreme temperature (-180 C and 120 C) and radiation (300krad), without the protection of thermal controls and radiation shields. Self-Reconfigurable Electronics platform: a) Evolutionary Processor (EP) to run reconfiguration mechanism; b) Reconfigurable chip (FPGA, FPAA, etc).

Active parallel redundancy for electronic integrator-type control circuits

NASA Technical Reports Server (NTRS)

Peterson, R. A.

1971-01-01

Circuit extends concept of redundant feedback control from type-0 to type-1 control systems. Inactive channels are slaves to the active channel, if latter fails, it is rejected and slave channel is activated. High reliability and elimination of single-component catastrophic failure are important in closed-loop control systems.

High density electronic circuit and process for making

DOEpatents

Morgan, William P.

1999-01-01

High density circuits with posts that protrude beyond one surface of a substrate to provide easy mounting of devices such as integrated circuits. The posts also provide stress relief to accommodate differential thermal expansion. The process allows high interconnect density with fewer alignment restrictions and less wasted circuit area than previous processes. The resulting substrates can be test platforms for die testing and for multi-chip module substrate testing. The test platform can contain active components and emulate realistic operational conditions, replacing shorts/opens net testing.

Microfabricated ion trap array

DOEpatents

Blain, Matthew G [Albuquerque, NM; Fleming, James G [Albuquerque, NM

2006-12-26

A microfabricated ion trap array, comprising a plurality of ion traps having an inner radius of order one micron, can be fabricated using surface micromachining techniques and materials known to the integrated circuits manufacturing and microelectromechanical systems industries. Micromachining methods enable batch fabrication, reduced manufacturing costs, dimensional and positional precision, and monolithic integration of massive arrays of ion traps with microscale ion generation and detection devices. Massive arraying enables the microscale ion traps to retain the resolution, sensitivity, and mass range advantages necessary for high chemical selectivity. The reduced electrode voltage enables integration of the microfabricated ion trap array with on-chip circuit-based rf operation and detection electronics (i.e., cell phone electronics). Therefore, the full performance advantages of the microfabricated ion trap array can be realized in truly field portable, handheld microanalysis systems.

Serpentine and corduroy circuits to enhance the stretchability of a stretchable electronic device

DOEpatents

Maghribi, Mariam N [Livermore, CA; Krulevitch, Peter A [Pleasanton, CA; Wilson, Thomas S [Castro Valley, CA; Hamilton, Julie K. , Park; Christina, [Cambridge, MA

2007-09-04

A stretchable electronic apparatus and method of producing the apparatus. The apparatus has a central longitudinal axis and the apparatus is stretchable in a longitudinal direction generally aligned with the central longitudinal axis. The apparatus comprises a stretchable polymer body, and at least one circuit line operatively connected to the stretchable polymer body, the at least one circuit line extending in the longitudinal direction and having a longitudinal component that extends in the longitudinal direction and having an offset component that is at an angle to the longitudinal direction, the longitudinal component and the offset component allowing the apparatus to stretch in the longitudinal direction while maintaining the integrity of the at least one circuit line.

Serpentine and corduroy circuits to enhance the stretchablity of a stretchable electronic device

DOEpatents

Maghribi, Mariam N [Livermore, CA; Krulevitch, Peter A [Pleasanton, CA; Wilson, Thomas S [Castro Valley, CA; Hamilton, Julie K [Tracy, CA; Park, Christina [Cambridge, MA

2011-01-18

A stretchable electronic apparatus and method of producing the apparatus. The apparatus has a central longitudinal axis and the apparatus is stretchable in a longitudinal direction generally aligned with the central longitudinal axis. The apparatus comprises a stretchable polymer body, and at least one circuit line operatively connected to the stretchable polymer body, the at least one circuit line extending in the longitudinal direction and having a longitudinal component that extends in the longitudinal direction and having an offset component that is at an angle to the longitudinal direction, the longitudinal component and the offset component allowing the apparatus to stretch in the longitudinal direction while maintaining the integrity of the at least one circuit line.

Op-Amps as Building Blocks in an Undergraduate Project-Type Electronics Lab

ERIC Educational Resources Information Center

Babcock, L. E.; Vignos, J. H.

1973-01-01

Describes a project-type undergraduate laboratory in electronics which utilizes integrated circuit operational amplifiers. Includes a brief account of ideal and nonideal operational amplifiers and a detailed description of the projects. (DF)

Label-Free Direct Electronic Detection of Biomolecules with Amorphous Silicon Nanostructures

PubMed Central

Lund, John; Mehta, Ranjana; Parviz, Babak A.

2007-01-01

We present the fabrication and characterization of a nano-scale sensor made of amorphous silicon for the label-free, electronic detection of three classes of biologically important molecules: ions, oligonucleotides, and proteins. The sensor structure has an active element which is a 50 nm wide amorphous silicon semicircle and has a total footprint of less than 4 μm2. We demonstrate the functionalization of the sensor with receptor molecules and the electronic detection of three targets: H+ ions, short single-stranded DNAs, and streptavidin. The sensor is able to reliably distinguish single base-pair mismatches in 12 base long strands of DNA and monitor the introduction and identification of straptavidin in real-time. The versatile sensor structure can be readily functionalized with a wide range of receptor molecules and is suitable for integration with high-speed electronic circuits as a post-process on an integrated circuit chip. PMID:17292148

Power Electronics Design of a Solar Powered In-car Wireless Tag for Asset Tracking and Parking Applications

NASA Astrophysics Data System (ADS)

Zhu, D.; Henaut, J.; Beeby, S. P.

2014-11-01

This paper reports the design and testing of a power conditioning circuit for a solar powered in-car wireless tag for asset tracking and parking application. Existing long range asset tracking is based on the GSM/GPRS network, which requires expensive subscriptions. The EU FP7 project CEWITT aims at developing a credit card sized autonomous wireless tag with GNSS geo-positioning capabilities to ensure the integrity and cost effectiveness for parking applications. It was found in previous research that solar cells are the most suitable energy sources for this application. This study focused on the power electronics design for the wireless tag. A suitable solar cell was chosen for its high power density. Charging circuit, hysteresis control circuit and LDO were designed and integrated to meet the system requirement. Test results showed that charging efficiency of 80 % had been achieved.

Recent Progress in the Development of Printed Thin-Film Transistors and Circuits with High-Resolution Printing Technology.

PubMed

Fukuda, Kenjiro; Someya, Takao

2017-07-01

Printed electronics enable the fabrication of large-scale, low-cost electronic devices and systems, and thus offer significant possibilities in terms of developing new electronics/optics applications in various fields. Almost all electronic applications require information processing using logic circuits. Hence, realizing the high-speed operation of logic circuits is also important for printed devices. This report summarizes recent progress in the development of printed thin-film transistors (TFTs) and integrated circuits in terms of materials, printing technologies, and applications. The first part of this report gives an overview of the development of functional inks such as semiconductors, electrodes, and dielectrics. The second part discusses high-resolution printing technologies and strategies to enable high-resolution patterning. The main focus of this report is on obtaining printed electrodes with high-resolution patterning and the electrical performance of printed TFTs using such printed electrodes. In the final part, some applications of printed electronics are introduced to exemplify their potential. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effect of Bypass Capacitor in Common-mode Noise Reduction Technique for Automobile PCB

NASA Astrophysics Data System (ADS)

Uno, Takanori; Ichikawa, Kouji; Mabuchi, Yuichi; Nakamura, Atushi

In this letter, we studied the use of common mode noise reduction technique for in-vehicle electronic equipment, each comprising large-scale integrated circuit (LSI), printed circuit board (PCB), wiring harnesses, and ground plane. We have improved the model circuit of the common mode noise that flows to the wire harness to add the effect of by-pass capacitors located near an LSI.

Experimental and theoretical analysis of integrated circuit (IC) chips on flexible substrates subjected to bending

NASA Astrophysics Data System (ADS)

Chen, Ying; Yuan, Jianghong; Zhang, Yingchao; Huang, Yonggang; Feng, Xue

2017-10-01

The interfacial failure of integrated circuit (IC) chips integrated on flexible substrates under bending deformation has been studied theoretically and experimentally. A compressive buckling test is used to impose the bending deformation onto the interface between the IC chip and the flexible substrate quantitatively, after which the failed interface is investigated using scanning electron microscopy. A theoretical model is established based on the beam theory and a bi-layer interface model, from which an analytical expression of the critical curvature in relation to the interfacial failure is obtained. The relationships between the critical curvature, the material, and the geometric parameters of the device are discussed in detail, providing guidance for future optimization flexible circuits based on IC chips.

Heavy-ion induced single-event upset in integrated circuits

NASA Technical Reports Server (NTRS)

Zoutendyk, J. A.

1991-01-01

The cosmic ray environment in space can affect the operation of Integrated Circuit (IC) devices via the phenomenon of Single Event Upset (SEU). In particular, heavy ions passing through an IC can induce sufficient integrated current (charge) to alter the state of a bistable circuit, for example a memory cell. The SEU effect is studied in great detail in both static and dynamic memory devices, as well as microprocessors fabricated from bipolar, Complementary Metal Oxide Semiconductor (CMOS) and N channel Metal Oxide Semiconductor (NMOS) technologies. Each device/process reflects its individual characteristics (minimum scale geometry/process parameters) via a unique response to the direct ionization of electron hole pairs by heavy ion tracks. A summary of these analytical and experimental SEU investigations is presented.

Assessment of Durable SiC JFET Technology for +600 C to -125 C Integrated Circuit Operation

NASA Technical Reports Server (NTRS)

Neudeck, P. G.; Krasowski, M. J.; Prokop, N. F.

2011-01-01

Electrical characteristics and circuit design considerations for prototype 6H-SiC JFET integrated circuits (ICs) operating over the broad temperature range of -125 C to +600 C are described. Strategic implementation of circuits with transistors and resistors in the same 6H-SiC n-channel layer enabled ICs with nearly temperature-independent functionality to be achieved. The frequency performance of the circuits declined at temperatures increasingly below or above room temperature, roughly corresponding to the change in 6H-SiC n-channel resistance arising from incomplete carrier ionization at low temperature and decreased electron mobility at high temperature. In addition to very broad temperature functionality, these simple digital and analog demonstration integrated circuits successfully operated with little change in functional characteristics over the course of thousands of hours at 500 C before experiencing interconnect-related failures. With appropriate further development, these initial results establish a new technology foundation for realizing durable 500 C ICs for combustion engine sensing and control, deep-well drilling, and other harsh-environment applications.

The design of high dynamic range ROIC for IRFPAs

NASA Astrophysics Data System (ADS)

Jiang, Dazhao; Liang, Qinghua; Zhang, Qiwen; Chen, Honglei; Ding, Ruijun

2015-10-01

The charge packet readout integrated circuit (ROIC) technology for the IRFPAs is introduced, which can realize that every pixel achieves a very high capacity of the electrons storage, and it also improves the performance of the SNR and reduces the saturation possibility of the pixels. The ROIC for the LWIR requires ability that obtaining high capacity for storing electrons. For the conventional ROIC, the maximum charge capacity is determined by the integration capacitance and the operating voltage, it can achieve a high charge capacity through increasing the area of the integration capacitor or raising the operating voltage. And this paper would introduce a digital method of ROIC that can achieve a very high charge capacity. The circuit architecture of this approach includes the following parts, a preamplifier, a comparator, a counter, and memory arrays. And the maximum charge capacity of the pixel is determined by the counter bits. This new method can achieve a high charge capacity more than 1Ge- every pixel and output the digital signal directly, while that of conventional ROIC is less than 50Me- and output the analog signal from the pixel. In this new circuit, the comparator is a important module, as the integration voltage value need compare with threshold voltage through the comparator all the time during the integration period, and we will discuss the influence of the comparator. This work design the circuit with the CSMC 0.35um CMOS technology, and the simulation use the spectre model.

Basic Mechanisms of Radiation Effects on Electronic Materials, Devices, and Integrated Circuits

DTIC Science & Technology

1982-08-01

recovery time versus reciprocal tempera- ture derived from data of the type shown in Figure 18. . . .31 20 Several ways to alter the charje state of...and long-term recovery processes that occUr in neutron-irradiated silicon ........ 40 29 Annealing factor versus time for 11 ohm-cm p-type bulk silicon...radioactive ele- ments (such as uranium and thorium) which, when incorporated in packaged integrated circuits, can cause occasional transient upsets

Investigation of Radiation Effects on Semiconductor Devices and Integrated Circuits

DTIC Science & Technology

1988-09-16

qualitativelysimilar to, and consistent with, findings at the two higher energies .) Results for irradiation of eightwhere q is the electronic charge, ni is the...COMMUNICATIONS R&D COMMAND ATTN: R BROWN ASSISTANT TO THE SECRETARY OF DEFENSE ATOMIC ENERGY U S ARMY ELECTRONIC TECH DEV LAB ATTN: EXECUTIVE ASSISTANT...Continue on reverse if necessary and identify by block number) Results of a study of radiation effects on electronic materials, devices, and integrated

Microwave integrated circuits for space applications

NASA Technical Reports Server (NTRS)

Leonard, Regis F.; Romanofsky, Robert R.

1991-01-01

Monolithic microwave integrated circuits (MMIC), which incorporate all the elements of a microwave circuit on a single semiconductor substrate, offer the potential for drastic reductions in circuit weight and volume and increased reliability, all of which make many new concepts in electronic circuitry for space applications feasible, including phased array antennas. NASA has undertaken an extensive program aimed at development of MMICs for space applications. The first such circuits targeted for development were an extension of work in hybrid (discrete component) technology in support of the Advanced Communication Technology Satellite (ACTS). It focused on power amplifiers, receivers, and switches at ACTS frequencies. More recent work, however, focused on frequencies appropriate for other NASA programs and emphasizes advanced materials in an effort to enhance efficiency, power handling capability, and frequency of operation or noise figure to meet the requirements of space systems.

Thread-Like CMOS Logic Circuits Enabled by Reel-Processed Single-Walled Carbon Nanotube Transistors via Selective Doping.

PubMed

Heo, Jae Sang; Kim, Taehoon; Ban, Seok-Gyu; Kim, Daesik; Lee, Jun Ho; Jur, Jesse S; Kim, Myung-Gil; Kim, Yong-Hoon; Hong, Yongtaek; Park, Sung Kyu

2017-08-01

The realization of large-area electronics with full integration of 1D thread-like devices may open up a new era for ultraflexible and human adaptable electronic systems because of their potential advantages in demonstrating scalable complex circuitry by a simply integrated weaving technology. More importantly, the thread-like fiber electronic devices can be achieved using a simple reel-to-reel process, which is strongly required for low-cost and scalable manufacturing technology. Here, high-performance reel-processed complementary metal-oxide-semiconductor (CMOS) integrated circuits are reported on 1D fiber substrates by using selectively chemical-doped single-walled carbon nanotube (SWCNT) transistors. With the introduction of selective n-type doping and a nonrelief photochemical patterning process, p- and n-type SWCNT transistors are successfully implemented on cylindrical fiber substrates under air ambient, enabling high-performance and reliable thread-like CMOS inverter circuits. In addition, it is noteworthy that the optimized reel-coating process can facilitate improvement in the arrangement of SWCNTs, building uniformly well-aligned SWCNT channels, and enhancement of the electrical performance of the devices. The p- and n-type SWCNT transistors exhibit field-effect mobility of 4.03 and 2.15 cm 2 V -1 s -1 , respectively, with relatively narrow distribution. Moreover, the SWCNT CMOS inverter circuits demonstrate a gain of 6.76 and relatively good dynamic operation at a supply voltage of 5.0 V. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Design, Modeling, and Fabrication of Chemical Vapor Deposition Grown MoS2 Circuits with E-Mode FETs for Large-Area Electronics.

PubMed

Yu, Lili; El-Damak, Dina; Radhakrishna, Ujwal; Ling, Xi; Zubair, Ahmad; Lin, Yuxuan; Zhang, Yuhao; Chuang, Meng-Hsi; Lee, Yi-Hsien; Antoniadis, Dimitri; Kong, Jing; Chandrakasan, Anantha; Palacios, Tomas

2016-10-12

Two-dimensional electronics based on single-layer (SL) MoS 2 offers significant advantages for realizing large-scale flexible systems owing to its ultrathin nature, good transport properties, and stable crystalline structure. In this work, we utilize a gate first process technology for the fabrication of highly uniform enhancement mode FETs with large mobility and excellent subthreshold swing. To enable large-scale MoS 2 circuit, we also develop Verilog-A compact models that accurately predict the performance of the fabricated MoS 2 FETs as well as a parametrized layout cell for the FET to facilitate the design and layout process using computer-aided design (CAD) tools. Using this CAD flow, we designed combinational logic gates and sequential circuits (AND, OR, NAND, NOR, XNOR, latch, edge-triggered register) as well as switched capacitor dc-dc converter, which were then fabricated using the proposed flow showing excellent performance. The fabricated integrated circuits constitute the basis of a standard cell digital library that is crucial for electronic circuit design using hardware description languages. The proposed design flow provides a platform for the co-optimization of the device fabrication technology and circuits design for future ubiquitous flexible and transparent electronics using two-dimensional materials.

New equivalent lumped electrical circuit for piezoelectric transformers.

PubMed

Gonnard, Paul; Schmitt, P M; Brissaud, Michel

2006-04-01

A new equivalent circuit is proposed for a contour-vibration-mode piezoelectric transformer (PT). It is shown that the usual lumped equivalent circuit derived from the conventional Mason approach is not accurate. The proposed circuit, built on experimental measurements, makes an explicit difference between the elastic energies stored respectively on the primary and secondary parts. The experimental and theoretical resonance frequencies with the secondary in open or short circuit are in good agreement as well as the output "voltage-current" characteristic and the optimum efficiency working point. This circuit can be extended to various PT configurations and appears to be a useful tool for modeling electronic devices that integrate piezoelectric transformers.

E-Learning System for Design and Construction of Amplifier Using Transistors

ERIC Educational Resources Information Center

Takemura, Atsushi

2014-01-01

This paper proposes a novel e-Learning system for the comprehensive understanding of electronic circuits with transistors. The proposed e-Learning system allows users to learn a wide range of topics, encompassing circuit theories, design, construction, and measurement. Given the fact that the amplifiers with transistors are an integral part of…

Measurement, modeling, and simulation of cryogenic SiGe HBT amplifier circuits for fast single spin readout

NASA Astrophysics Data System (ADS)

England, Troy; Curry, Matthew; Carr, Steve; Swartzentruber, Brian; Lilly, Michael; Bishop, Nathan; Carrol, Malcolm

2015-03-01

Fast, low-power quantum state readout is one of many challenges facing quantum information processing. Single electron transistors (SETs) are potentially fast, sensitive detectors for performing spin readout of electrons bound to Si:P donors. From a circuit perspective, however, their output impedance and nonlinear conductance are ill suited to drive the parasitic capacitance typical of coaxial conductors used in cryogenic environments, necessitating a cryogenic amplification stage. We will discuss calibration data, as well as modeling and simulation of cryogenic silicon-germanium (SiGe) heterojunction bipolar transistor (HBT) circuits connected to a silicon SET and operating at 4 K. We find a continuum of solutions from simple, single-HBT amplifiers to more complex, multi-HBT circuits suitable for integration, with varying noise levels and power vs. bandwidth tradeoffs. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.

Low-noise heterodyne receiver for electron cyclotron emission imaging and microwave imaging reflectometry

NASA Astrophysics Data System (ADS)

Tobias, B.; Domier, C. W.; Luhmann, N. C.; Luo, C.; Mamidanna, M.; Phan, T.; Pham, A.-V.; Wang, Y.

2016-11-01

The critical component enabling electron cyclotron emission imaging (ECEI) and microwave imaging reflectometry (MIR) to resolve 2D and 3D electron temperature and density perturbations is the heterodyne imaging array that collects and downconverts radiated emission and/or reflected signals (50-150 GHz) to an intermediate frequency (IF) band (e.g. 0.1-18 GHz) that can be transmitted by a shielded coaxial cable for further filtering and detection. New circuitry has been developed for this task, integrating gallium arsenide (GaAs) monolithic microwave integrated circuits (MMICs) mounted on a liquid crystal polymer (LCP) substrate. The improved topology significantly increases electromagnetic shielding from out-of-band interference, leads to 10× improvement in the signal-to-noise ratio, and dramatic cost savings through integration. The current design, optimized for reflectometry and edge radiometry on mid-sized tokamaks, has demonstrated >20 dB conversion gain in upper V-band (60-75 GHz). Implementation of the circuit in a multi-channel electron cyclotron emission imaging (ECEI) array will improve the diagnosis of edge-localized modes and fluctuations of the high-confinement, or H-mode, pedestal.

Low-noise heterodyne receiver for electron cyclotron emission imaging and microwave imaging reflectometry.

PubMed

Tobias, B; Domier, C W; Luhmann, N C; Luo, C; Mamidanna, M; Phan, T; Pham, A-V; Wang, Y

2016-11-01

The critical component enabling electron cyclotron emission imaging (ECEI) and microwave imaging reflectometry (MIR) to resolve 2D and 3D electron temperature and density perturbations is the heterodyne imaging array that collects and downconverts radiated emission and/or reflected signals (50-150 GHz) to an intermediate frequency (IF) band (e.g. 0.1-18 GHz) that can be transmitted by a shielded coaxial cable for further filtering and detection. New circuitry has been developed for this task, integrating gallium arsenide (GaAs) monolithic microwave integrated circuits (MMICs) mounted on a liquid crystal polymer (LCP) substrate. The improved topology significantly increases electromagnetic shielding from out-of-band interference, leads to 10× improvement in the signal-to-noise ratio, and dramatic cost savings through integration. The current design, optimized for reflectometry and edge radiometry on mid-sized tokamaks, has demonstrated >20 dB conversion gain in upper V-band (60-75 GHz). Implementation of the circuit in a multi-channel electron cyclotron emission imaging (ECEI) array will improve the diagnosis of edge-localized modes and fluctuations of the high-confinement, or H-mode, pedestal.

GaAs VLSI for aerospace electronics

NASA Technical Reports Server (NTRS)

Larue, G.; Chan, P.

1990-01-01

Advanced aerospace electronics systems require high-speed, low-power, radiation-hard, digital components for signal processing, control, and communication applications. GaAs VLSI devices provide a number of advantages over silicon devices including higher carrier velocities, ability to integrate with high performance optical devices, and high-resistivity substrates that provide very short gate delays, good isolation, and tolerance to many forms of radiation. However, III-V technologies also have disadvantages, such as lower yield compared to silicon MOS technology. Achieving very large scale integration (VLSI) is particularly important for fast complex systems. At very short gate delays (less than 100 ps), chip-to-chip interconnects severely degrade circuit clock rates. Complex systems, therefore, benefit greatly when as many gates as possible are placed on a single chip. To fully exploit the advantages of GaAs circuits, attention must be focused on achieving high integration levels by reducing power dissipation, reducing the number of devices per logic function, and providing circuit designs that are more tolerant to process and environmental variations. In addition, adequate noise margin must be maintained to ensure a practical yield.

Nanogap Electrodes towards Solid State Single-Molecule Transistors.

PubMed

Cui, Ajuan; Dong, Huanli; Hu, Wenping

2015-12-01

With the establishment of complementary metal-oxide-semiconductor (CMOS)-based integrated circuit technology, it has become more difficult to follow Moore's law to further downscale the size of electronic components. Devices based on various nanostructures were constructed to continue the trend in the minimization of electronics, and molecular devices are among the most promising candidates. Compared with other candidates, molecular devices show unique superiorities, and intensive studies on molecular devices have been carried out both experimentally and theoretically at the present time. Compared to two-terminal molecular devices, three-terminal devices, namely single-molecule transistors, show unique advantages both in fundamental research and application and are considered to be an essential part of integrated circuits based on molecular devices. However, it is very difficult to construct them using the traditional microfabrication techniques directly, thus new fabrication strategies are developed. This review aims to provide an exclusive way of manufacturing solid state gated nanogap electrodes, the foundation of constructing transistors of single or a few molecules. Such single-molecule transistors have the potential to be used to build integrated circuits. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A front end readout electronics ASIC chip for position sensitive solid state detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kravis, S.D.; Tuemer, T.O.; Visser, G.J.

1998-12-31

A mixed signal Application Specific Integrated Circuit (ASIC) chip for front end readout electronics of position sensitive solid state detectors has been manufactured. It is called RENA (Readout Electronics for Nuclear Applications). This chip can be used for both medical and industrial imaging of X-rays and gamma rays. The RENA chip is a monolithic integrated circuit and has 32 channels with low noise high input impedance charge sensitive amplifiers. It works in pulse counting mode with good energy resolution. It also has a self triggering output which is essential for nuclear applications when the incident radiation arrives at random. Different,more » externally selectable, operational modes that includes a sparse readout mode is available to increase data throughput. It also has externally selectable shaping (peaking) times.« less

An innovative approach to predict technology evolution for the desoldering of printed circuit boards: A perspective from China and America.

PubMed

Wang, Chen; Zhao, Wu; Wang, Jie; Chen, Ling; Luo, Chun-Jing

2016-06-01

The printed circuit boards basis of electronic equipment have seen a rapid growth in recent years and played a significant role in modern life. Nowadays, the fact that electronic devices upgrade quickly necessitates a proper management of waste printed circuit boards. Non-destructive desoldering of waste printed circuit boards becomes the first and the most crucial step towards recycling electronic components. Owing to the diversity of materials and components, the separation process is difficult, which results in complex and expensive recovery of precious materials and electronic components from waste printed circuit boards. To cope with this problem, we proposed an innovative approach integrating Theory of Inventive Problem Solving (TRIZ) evolution theory and technology maturity mapping system to forecast the evolution trends of desoldering technology of waste printed circuit boards. This approach can be applied to analyse the technology evolution, as well as desoldering technology evolution, then research and development strategy and evolution laws can be recommended. As an example, the maturity of desoldering technology is analysed with a technology maturity mapping system model. What is more, desoldering methods in different stages are analysed and compared. According to the analysis, the technological evolution trends are predicted to be 'the law of energy conductivity' and 'increasing the degree of idealisation'. And the potential technology and evolutionary state of waste printed circuit boards are predicted, offering reference for future waste printed circuit boards recycling. © The Author(s) 2016.

Paper-like electronic displays: Large-area rubber-stamped plastic sheets of electronics and microencapsulated electrophoretic inks

PubMed Central

Rogers, John A.; Bao, Zhenan; Baldwin, Kirk; Dodabalapur, Ananth; Crone, Brian; Raju, V. R.; Kuck, Valerie; Katz, Howard; Amundson, Karl; Ewing, Jay; Drzaic, Paul

2001-01-01

Electronic systems that use rugged lightweight plastics potentially offer attractive characteristics (low-cost processing, mechanical flexibility, large area coverage, etc.) that are not easily achieved with established silicon technologies. This paper summarizes work that demonstrates many of these characteristics in a realistic system: organic active matrix backplane circuits (256 transistors) for large (≈5 × 5-inch) mechanically flexible sheets of electronic paper, an emerging type of display. The success of this effort relies on new or improved processing techniques and materials for plastic electronics, including methods for (i) rubber stamping (microcontact printing) high-resolution (≈1 μm) circuits with low levels of defects and good registration over large areas, (ii) achieving low leakage with thin dielectrics deposited onto surfaces with relief, (iii) constructing high-performance organic transistors with bottom contact geometries, (iv) encapsulating these transistors, (v) depositing, in a repeatable way, organic semiconductors with uniform electrical characteristics over large areas, and (vi) low-temperature (≈100°C) annealing to increase the on/off ratios of the transistors and to improve the uniformity of their characteristics. The sophistication and flexibility of the patterning procedures, high level of integration on plastic substrates, large area coverage, and good performance of the transistors are all important features of this work. We successfully integrate these circuits with microencapsulated electrophoretic “inks” to form sheets of electronic paper. PMID:11320233

Flexible packaging of solid-state integrated circuit chips with elastomeric microfluidics

PubMed Central

Zhang, Bowei; Dong, Quan; Korman, Can E.; Li, Zhenyu; Zaghloul, Mona E.

2013-01-01

A flexible technology is proposed to integrate smart electronics and microfluidics all embedded in an elastomer package. The microfluidic channels are used to deliver both liquid samples and liquid metals to the integrated circuits (ICs). The liquid metals are used to realize electrical interconnects to the IC chip. This avoids the traditional IC packaging challenges, such as wire-bonding and flip-chip bonding, which are not compatible with current microfluidic technologies. As a demonstration we integrated a CMOS magnetic sensor chip and associate microfluidic channels on a polydimethylsiloxane (PDMS) substrate that allows precise delivery of small liquid samples to the sensor. Furthermore, the packaged system is fully functional under bending curvature radius of one centimetre and uniaxial strain of 15%. The flexible integration of solid-state ICs with microfluidics enables compact flexible electronic and lab-on-a-chip systems, which hold great potential for wearable health monitoring, point-of-care diagnostics and environmental sensing among many other applications.

Integrated Power Adapter: Isolated Converter with Integrated Passives and Low Material Stress

DOE Office of Scientific and Technical Information (OSTI.GOV)

None

2010-09-01

ADEPT Project: CPES at Virginia Tech is developing an extremely efficient power converter that could be used in power adapters for small, lightweight laptops and other types of mobile electronic devices. Power adapters convert electrical energy into useable power for an electronic device, and they currently waste a lot of energy when they are plugged into an outlet to power up. CPES at Virginia Tech is integrating high-density capacitors, new magnetic materials, high-frequency integrated circuits, and a constant-flux transformer to create its efficient power converter. The high-density capacitors enable the power adapter to store more energy. The new magnetic materialsmore » also increase energy storage, and they can be precisely dispensed using a low-cost ink-jet printer which keeps costs down. The high-frequency integrated circuits can handle more power, and they can handle it more efficiently. And, the constant-flux transformer processes a consistent flow of electrical current, which makes the converter more efficient.« less

Integration of InGaAs MOSFETs and GaAs/ AlGaAs lasers on Si Substrate for advanced opto-electronic integrated circuits (OEICs).

PubMed

Kumar, Annie; Lee, Shuh-Ying; Yadav, Sachin; Tan, Kian Hua; Loke, Wan Khai; Dong, Yuan; Lee, Kwang Hong; Wicaksono, Satrio; Liang, Gengchiau; Yoon, Soon-Fatt; Antoniadis, Dimitri; Yeo, Yee-Chia; Gong, Xiao

2017-12-11

Lasers monolithically integrated with high speed MOSFETs on the silicon (Si) substrate could be a key to realize low cost, low power, and high speed opto-electronic integrated circuits (OEICs). In this paper, we report the monolithic integration of InGaAs channel transistors with electrically pumped GaAs/AlGaAs lasers on the Si substrate for future advanced OEICs. The laser and transistor layers were grown on the Si substrate by molecular beam epitaxy (MBE) using direct epitaxial growth. InGaAs n-FETs with an I ON /I OFF ratio of more than 10 6 with very low off-state leakage and a low subthreshold swing with a minimum of 82 mV/decade were realized. Electrically pumped GaAs/AlGaAs quantum well (QW) lasers with a lasing wavelength of 795 nm at room temperature were demonstrated. The overall fabrication process has a low thermal budget of no more than 400 °C.

Highest integration in microelectronics: Development of digital ASICs for PARS3-LR

NASA Astrophysics Data System (ADS)

Scholler, Peter; Vonlutz, Rainer

Essential electronic system components by PARS3-LR, show high requirements in calculation power, power consumption and reliability, by immediately increasing integration thicknesses. These problems are solved by using integrated circuits, developed by LSI LOGIC, that uses the technical and economic advantages of this leading edge technology.

Electronics: State of the Art No. 2.

ERIC Educational Resources Information Center

Gosling, W.

1979-01-01

Reviewed is a brief history of electronics technology, from the early beginnings of vacuum devices to development of solid state devices, silicon fabrication in the use of transistors, and integrated circuits. Educational needs at the university or polytechnic level are discussed. (CS)

Application of a high-energy-density permanent magnet material in underwater systems

NASA Astrophysics Data System (ADS)

Cho, C. P.; Egan, C.; Krol, W. P.

1996-06-01

This paper addresses the application of high-energy-density permanent magnet (PM) technology to (1) the brushless, axial-field PM motor and (2) the integrated electric motor/pump system for under-water applications. Finite-element analysis and lumped parameter magnetic circuit analysis were used to calculate motor parameters and performance characteristics and to conduct tradeoff studies. Compact, efficient, reliable, and quiet underwater systems are attainable with the development of high-energy-density PM material, power electronic devices, and power integrated-circuit technology.

Study of SEM induced current and voltage contrast modes to assess semiconductor reliability

NASA Technical Reports Server (NTRS)

Beall, J. R.

1976-01-01

The purpose of the scanning electron microscopy study was to review the failure history of existing integrated circuit technologies to identify predominant failure mechanisms, and to evaluate the feasibility of their detection using SEM application techniques. The study investigated the effects of E-beam irradiation damage and contamination deposition rates; developed the necessary methods for applying the techniques to the detection of latent defects and weaknesses in integrated circuits; and made recommendations for applying the techniques.

Design, Fabrication, and Characterization of Carbon Nanotube Field Emission Devices for Advanced Applications

NASA Astrophysics Data System (ADS)

Radauscher, Erich Justin

Carbon nanotubes (CNTs) have recently emerged as promising candidates for electron field emission (FE) cathodes in integrated FE devices. These nanostructured carbon materials possess exceptional properties and their synthesis can be thoroughly controlled. Their integration into advanced electronic devices, including not only FE cathodes, but sensors, energy storage devices, and circuit components, has seen rapid growth in recent years. The results of the studies presented here demonstrate that the CNT field emitter is an excellent candidate for next generation vacuum microelectronics and related electron emission devices in several advanced applications. The work presented in this study addresses determining factors that currently confine the performance and application of CNT-FE devices. Characterization studies and improvements to the FE properties of CNTs, along with Micro-Electro-Mechanical Systems (MEMS) design and fabrication, were utilized in achieving these goals. Important performance limiting parameters, including emitter lifetime and failure from poor substrate adhesion, are examined. The compatibility and integration of CNT emitters with the governing MEMS substrate (i.e., polycrystalline silicon), and its impact on these performance limiting parameters, are reported. CNT growth mechanisms and kinetics were investigated and compared to silicon (100) to improve the design of CNT emitter integrated MEMS based electronic devices, specifically in vacuum microelectronic device (VMD) applications. Improved growth allowed for design and development of novel cold-cathode FE devices utilizing CNT field emitters. A chemical ionization (CI) source based on a CNT-FE electron source was developed and evaluated in a commercial desktop mass spectrometer for explosives trace detection. This work demonstrated the first reported use of a CNT-based ion source capable of collecting CI mass spectra. The CNT-FE source demonstrated low power requirements, pulsing capabilities, and average lifetimes of over 320 hours when operated in constant emission mode under elevated pressures, without sacrificing performance. Additionally, a novel packaged ion source for miniature mass spectrometer applications using CNT emitters, a MEMS based Nier-type geometry, and a Low Temperature Cofired Ceramic (LTCC) 3D scaffold with integrated ion optics were developed and characterized. While previous research has shown other devices capable of collecting ion currents on chip, this LTCC packaged MEMS micro-ion source demonstrated improvements in energy and angular dispersion as well as the ability to direct the ions out of the packaged source and towards a mass analyzer. Simulations and experimental design, fabrication, and characterization were used to make these improvements. Finally, novel CNT-FE devices were developed to investigate their potential to perform as active circuit elements in VMD circuits. Difficulty integrating devices at micron-scales has hindered the use of vacuum electronic devices in integrated circuits, despite the unique advantages they offer in select applications. Using a combination of particle trajectory simulation and experimental characterization, device performance in an integrated platform was investigated. Solutions to the difficulties in operating multiple devices in close proximity and enhancing electron transmission (i.e., reducing grid loss) are explored in detail. A systematic and iterative process was used to develop isolation structures that reduced crosstalk between neighboring devices from 15% on average, to nearly zero. Innovative geometries and a new operational mode reduced grid loss by nearly threefold, thereby improving transmission of the emitted cathode current to the anode from 25% in initial designs to 70% on average. These performance enhancements are important enablers for larger scale integration and for the realization of complex vacuum microelectronic circuits.

High density electronic circuit and process for making

DOEpatents

Morgan, W.P.

1999-06-29

High density circuits with posts that protrude beyond one surface of a substrate to provide easy mounting of devices such as integrated circuits are disclosed. The posts also provide stress relief to accommodate differential thermal expansion. The process allows high interconnect density with fewer alignment restrictions and less wasted circuit area than previous processes. The resulting substrates can be test platforms for die testing and for multi-chip module substrate testing. The test platform can contain active components and emulate realistic operational conditions, replacing shorts/opens net testing. 8 figs.

Fully Printed Stretchable Thin-Film Transistors and Integrated Logic Circuits.

PubMed

Cai, Le; Zhang, Suoming; Miao, Jinshui; Yu, Zhibin; Wang, Chuan

2016-12-27

This paper reports intrinsically stretchable thin-film transistors (TFTs) and integrated logic circuits directly printed on elastomeric polydimethylsiloxane (PDMS) substrates. The printed devices utilize carbon nanotubes and a type of hybrid gate dielectric comprising PDMS and barium titanate (BaTiO 3 ) nanoparticles. The BaTiO 3 /PDMS composite simultaneously provides high dielectric constant, superior stretchability, low leakage, as well as good printability and compatibility with the elastomeric substrate. Both TFTs and logic circuits can be stretched beyond 50% strain along either channel length or channel width directions for thousands of cycles while showing no significant degradation in electrical performance. This work may offer an entry into more sophisticated stretchable electronic systems with monolithically integrated sensors, actuators, and displays, fabricated by scalable and low-cost methods for real life applications.

Ferrite film growth on semiconductor substrates towards microwave and millimeter wave integrated circuits

NASA Astrophysics Data System (ADS)

Chen, Z.; Harris, V. G.

2012-10-01

It is widely recognized that as electronic systems' operating frequency shifts to microwave and millimeter wave bands, the integration of ferrite passive devices with semiconductor solid state active devices holds significant advantages in improved miniaturization, bandwidth, speed, power and production costs, among others. Traditionally, ferrites have been employed in discrete bulk form, despite attempts to integrate ferrite as films within microwave integrated circuits. Technical barriers remain centric to the incompatibility between ferrite and semiconductor materials and their processing protocols. In this review, we present past and present efforts at ferrite integration with semiconductor platforms with the aim to identify the most promising paths to realizing the complete integration of on-chip ferrite and semiconductor devices, assemblies and systems.

Electronic Switch Arrays for Managing Microbattery Arrays

NASA Technical Reports Server (NTRS)

Mojarradi, Mohammad; Alahmad, Mahmoud; Sukumar, Vinesh; Zghoul, Fadi; Buck, Kevin; Hess, Herbert; Li, Harry; Cox, David

2008-01-01

Integrated circuits have been invented for managing the charging and discharging of such advanced miniature energy-storage devices as planar arrays of microscopic energy-storage elements [typically, microscopic electrochemical cells (microbatteries) or microcapacitors]. The architecture of these circuits enables implementation of the following energy-management options: dynamic configuration of the elements of an array into a series or parallel combination of banks (subarrarys), each array comprising a series of parallel combination of elements; direct addressing of individual banks for charging/or discharging; and, disconnection of defective elements and corresponding reconfiguration of the rest of the array to utilize the remaining functional elements to obtain the desited voltage and current performance. An integrated circuit according to the invention consists partly of a planar array of field-effect transistors that function as switches for routing electric power among the energy-storage elements, the power source, and the load. To connect the energy-storage elements to the power source for charging, a specific subset of switches is closed; to connect the energy-storage elements to the load for discharging, a different specific set of switches is closed. Also included in the integrated circuit is circuitry for monitoring and controlling charging and discharging. The control and monitoring circuitry, the switching transistors, and interconnecting metal lines are laid out on the integrated-circuit chip in a pattern that registers with the array of energy-storage elements. There is a design option to either (1) fabricate the energy-storage elements in the corresponding locations on, and as an integral part of, this integrated circuit; or (2) following a flip-chip approach, fabricate the array of energy-storage elements on a separate integrated-circuit chip and then align and bond the two chips together.

Designing Thin, Ultrastretchable Electronics with Stacked Circuits and Elastomeric Encapsulation Materials.

PubMed

Xu, Renxiao; Lee, Jung Woo; Pan, Taisong; Ma, Siyi; Wang, Jiayi; Han, June Hyun; Ma, Yinji; Rogers, John A; Huang, Yonggang

2017-01-26

Many recently developed soft, skin-like electronics with high performance circuits and low modulus encapsulation materials can accommodate large bending, stretching, and twisting deformations. Their compliant mechanics also allows for intimate, nonintrusive integration to the curvilinear surfaces of soft biological tissues. By introducing a stacked circuit construct, the functional density of these systems can be greatly improved, yet their desirable mechanics may be compromised due to the increased overall thickness. To address this issue, the results presented here establish design guidelines for optimizing the deformable properties of stretchable electronics with stacked circuit layers. The effects of three contributing factors (i.e., the silicone inter-layer, the composite encapsulation, and the deformable interconnects) on the stretchability of a multilayer system are explored in detail via combined experimental observation, finite element modeling, and theoretical analysis. Finally, an electronic module with optimized design is demonstrated. This highly deformable system can be repetitively folded, twisted, or stretched without observable influences to its electrical functionality. The ultrasoft, thin nature of the module makes it suitable for conformal biointegration.

Designing Thin, Ultrastretchable Electronics with Stacked Circuits and Elastomeric Encapsulation Materials

PubMed Central

Xu, Renxiao; Lee, Jung Woo; Pan, Taisong; Ma, Siyi; Wang, Jiayi; Han, June Hyun; Ma, Yinji

2017-01-01

Many recently developed soft, skin-like electronics with high performance circuits and low modulus encapsulation materials can accommodate large bending, stretching, and twisting deformations. Their compliant mechanics also allows for intimate, nonintrusive integration to the curvilinear surfaces of soft biological tissues. By introducing a stacked circuit construct, the functional density of these systems can be greatly improved, yet their desirable mechanics may be compromised due to the increased overall thickness. To address this issue, the results presented here establish design guidelines for optimizing the deformable properties of stretchable electronics with stacked circuit layers. The effects of three contributing factors (i.e., the silicone inter-layer, the composite encapsulation, and the deformable interconnects) on the stretchability of a multilayer system are explored in detail via combined experimental observation, finite element modeling, and theoretical analysis. Finally, an electronic module with optimized design is demonstrated. This highly deformable system can be repetitively folded, twisted, or stretched without observable influences to its electrical functionality. The ultrasoft, thin nature of the module makes it suitable for conformal biointegration. PMID:29046624

Bridging ultrahigh-Q devices and photonic circuits

NASA Astrophysics Data System (ADS)

Yang, Ki Youl; Oh, Dong Yoon; Lee, Seung Hoon; Yang, Qi-Fan; Yi, Xu; Shen, Boqiang; Wang, Heming; Vahala, Kerry

2018-05-01

Optical microresonators are essential to a broad range of technologies and scientific disciplines. However, many of their applications rely on discrete devices to attain challenging combinations of ultra-low-loss performance (ultrahigh Q) and resonator design requirements. This prevents access to scalable fabrication methods for photonic integration and lithographic feature control. Indeed, finding a microfabrication bridge that connects ultrahigh-Q device functions with photonic circuits is a priority of the microcavity field. Here, an integrated resonator having a record Q factor over 200 million is presented. Its ultra-low-loss and flexible cavity design brings performance to integrated systems that has been the exclusive domain of discrete silica and crystalline microcavity devices. Two distinctly different devices are demonstrated: soliton sources with electronic repetition rates and high-coherence/low-threshold Brillouin lasers. This multi-device capability and performance from a single integrated cavity platform represents a critical advance for future photonic circuits and systems.

Advanced Electronics. Curriculum Development. Bulletin 1778.

ERIC Educational Resources Information Center

Eppler, Thomas

This document is a curriculum guide for a 180-hour course in advanced electronics for 11th and 12th grades that has four instructional units. The instructional units are orientation, discrete components, integrated circuits, and electronic systems. The document includes a course flow chart; a two-page section that describes the course, lists…

Integrated LTCC pressure/flow/temperature multisensor for compressed air diagnostics.

PubMed

Fournier, Yannick; Maeder, Thomas; Boutinard-Rouelle, Grégoire; Barras, Aurélie; Craquelin, Nicolas; Ryser, Peter

2010-01-01

We present a multisensor designed for industrial compressed air diagnostics and combining the measurement of pressure, flow, and temperature, integrated with the corresponding signal conditioning electronics in a single low-temperature co-fired ceramic (LTCC) package. The developed sensor may be soldered onto an integrated electro-fluidic platform by using standard surface mount device (SMD) technology, e.g., as a standard electronic component would be on a printed circuit board, obviating the need for both wires and tubes and thus paving the road towards low-cost integrated electro-fluidic systems. Several performance aspects of this device are presented and discussed, together with electronics design issues.

Integrated LTCC Pressure/Flow/Temperature Multisensor for Compressed Air Diagnostics†

PubMed Central

Fournier, Yannick; Maeder, Thomas; Boutinard-Rouelle, Grégoire; Barras, Aurélie; Craquelin, Nicolas; Ryser, Peter

2010-01-01

We present a multisensor designed for industrial compressed air diagnostics and combining the measurement of pressure, flow, and temperature, integrated with the corresponding signal conditioning electronics in a single low-temperature co-fired ceramic (LTCC) package. The developed sensor may be soldered onto an integrated electro-fluidic platform by using standard surface mount device (SMD) technology, e.g., as a standard electronic component would be on a printed circuit board, obviating the need for both wires and tubes and thus paving the road towards low-cost integrated electro-fluidic systems. Several performance aspects of this device are presented and discussed, together with electronics design issues. PMID:22163518

Development of a W-band Serpentine Waveguide Amplifier based on a UV-LIGA Microfabricated Copper Circuit

DTIC Science & Technology

2013-03-01

beam tunnel [5,6] for a high - power , wideband W- band traveling-wave tube (TWT) amplifier. UV-LIGA is also a promising technique at higher...wide- band , high - power operation of the amplifier [7, 8]. The interaction circuit consists of two traveling-wave stages separated by a power ...technique produces monolithic all-copper circuits, integrated with electron beam tunnel, suitable for high - power continuous-wave operation [1]. We

Results on 3D interconnection from AIDA WP3

NASA Astrophysics Data System (ADS)

Moser, Hans-Günther; AIDA-WP3

2016-09-01

From 2010 to 2014 the EU funded AIDA project established in one of its work packages (WP3) a network of groups working collaboratively on advanced 3D integration of electronic circuits and semiconductor sensors for applications in particle physics. The main motivation came from the severe requirements on pixel detectors for tracking and vertexing at future Particle Physics experiments at LHC, super-B factories and linear colliders. To go beyond the state-of-the-art, the main issues were studying low mass, high bandwidth applications, with radiation hardness capabilities, with low power consumption, offering complex functionality, with small pixel size and without dead regions. The interfaces and interconnects of sensors to electronic readout integrated circuits are a key challenge for new detector applications.

Advances in integrated photonic circuits for packet-switched interconnection

NASA Astrophysics Data System (ADS)

Williams, Kevin A.; Stabile, Ripalta

2014-03-01

Sustained increases in capacity and connectivity are needed to overcome congestion in a range of broadband communication network nodes. Packet routing and switching in the electronic domain are leading to unsustainable energy- and bandwidth-densities, motivating research into hybrid solutions: optical switching engines are introduced for massive-bandwidth data transport while the electronic domain is clocked at more modest GHz rates to manage routing. Commercially-deployed optical switching engines using MEMS technologies are unwieldy and too slow to reconfigure for future packet-based networking. Optoelectronic packet-compliant switch technologies have been demonstrated as laboratory prototypes, but they have so far mostly used discretely pigtailed components, which are impractical for control plane development and product assembly. Integrated photonics has long held the promise of reduced hardware complexity and may be the critical step towards packet-compliant optical switching engines. Recently a number of laboratories world-wide have prototyped optical switching circuits using monolithic integration technology with up to several hundreds of integrated optical components per chip. Our own work has focused on multi-input to multi-output switching matrices. Recently we have demonstrated 8×8×8λ space and wavelength selective switches using gated cyclic routers and 16×16 broadband switching chips using monolithic multi-stage networks. We now operate these advanced circuits with custom control planes implemented with FPGAs to explore real time packet routing in multi-wavelength, multi-port test-beds. We review our contributions in the context of state of the art photonic integrated circuit technology and packet optical switching hardware demonstrations.

Simulation of 100-300 GHz solid-state harmonic sources

NASA Technical Reports Server (NTRS)

Zybura, Michael F.; Jones, J. Robert; Jones, Stephen H.; Tait, Gregory B.

1995-01-01

Accurate and efficient simulations of the large-signal time-dependent characteristics of second-harmonic Transferred Electron Oscillators (TEO's) and Heterostructure Barrier Varactor (HBV) frequency triplers have been obtained. This is accomplished by using a novel and efficient harmonic-balance circuit analysis technique which facilitates the integration of physics-based hydrodynamic device simulators. The integrated hydrodynamic device/harmonic-balance circuit simulators allow TEO and HBV circuits to be co-designed from both a device and a circuit point of view. Comparisons have been made with published experimental data for both TEO's and HBV's. For TEO's, excellent correlation has been obtained at 140 GHz and 188 GHz in second-harmonic operation. Excellent correlation has also been obtained for HBV frequency triplers operating near 200 GHz. For HBV's, both a lumped quasi-static equivalent circuit model and the hydrodynamic device simulator have been linked to the harmonic-balance circuit simulator. This comparison illustrates the importance of representing active devices with physics-based numerical device models rather than analytical device models.

Radiation-Hard Complementary Integrated Circuits Based on Semiconducting Single-Walled Carbon Nanotubes.

PubMed

McMorrow, Julian J; Cress, Cory D; Gaviria Rojas, William A; Geier, Michael L; Marks, Tobin J; Hersam, Mark C

2017-03-28

Increasingly complex demonstrations of integrated circuit elements based on semiconducting single-walled carbon nanotubes (SWCNTs) mark the maturation of this technology for use in next-generation electronics. In particular, organic materials have recently been leveraged as dopant and encapsulation layers to enable stable SWCNT-based rail-to-rail, low-power complementary metal-oxide-semiconductor (CMOS) logic circuits. To explore the limits of this technology in extreme environments, here we study total ionizing dose (TID) effects in enhancement-mode SWCNT-CMOS inverters that employ organic doping and encapsulation layers. Details of the evolution of the device transport properties are revealed by in situ and in operando measurements, identifying n-type transistors as the more TID-sensitive component of the CMOS system with over an order of magnitude larger degradation of the static power dissipation. To further improve device stability, radiation-hardening approaches are explored, resulting in the observation that SWNCT-CMOS circuits are TID-hard under dynamic bias operation. Overall, this work reveals conditions under which SWCNTs can be employed for radiation-hard integrated circuits, thus presenting significant potential for next-generation satellite and space applications.

4H-SiC JFET Multilayer Integrated Circuit Technologies Tested Up to 1000 K

NASA Technical Reports Server (NTRS)

Spry, D. J.; Neudeck, P. G.; Chen, L.; Chang, C. W.; Lukco, D.; Beheim, G. M.

2015-01-01

Testing of semiconductor electronics at temperatures above their designed operating envelope is recognized as vital to qualification and lifetime prediction of circuits. This work describes the high temperature electrical testing of prototype 4H silicon carbide (SiC) junction field effect transistor (JFET) integrated circuits (ICs) technology implemented with multilayer interconnects; these ICs are intended for prolonged operation at temperatures up to 773K (500 C). A 50 mm diameter sapphire wafer was used in place of the standard NASA packaging for this experiment. Testing was carried out between 300K (27 C) and 1150K (877 C) with successful electrical operation of all devices observed up to 1000K (727 C).

Schematic driven silicon photonics design

NASA Astrophysics Data System (ADS)

Chrostowski, Lukas; Lu, Zeqin; Flückiger, Jonas; Pond, James; Klein, Jackson; Wang, Xu; Li, Sarah; Tai, Wei; Hsu, En Yao; Kim, Chan; Ferguson, John; Cone, Chris

2016-03-01

Electronic circuit designers commonly start their design process with a schematic, namely an abstract representation of the physical circuit. In integrated photonics on the other hand, it is very common for the design to begin at the physical component level. In order to build large integrated photonic systems, it is crucial to design using a schematic-driven approach. This includes simulations based on schematics, schematic-driven layout, layout versus schematic verification, and post-layout simulations. This paper describes such a design framework implemented using Mentor Graphics and Lumerical Solutions design tools. In addition, we describe challenges in silicon photonics related to manufacturing, and how these can be taken into account in simulations and how these impact circuit performance.

Open-channel integrating-type flow meter

USGS Publications Warehouse

Koopman, K.C.

1971-01-01

A relatively inexpensive meter for measuring cumulative flow in open channels with a rated control,. called a "totalizer", was developed. It translates the nonlinear function of gage height to flow by use of a cam and a float. A variable resistance element in an electronic circuit is controlled by the float so that the electron flow in the circuit corresponds to the flow of water. The flow of electricity causes electroplating of an electrode with silver. The amount of silver deposited is proportionate to the flow of water. The total flow of water is determined by removing the silver from the electrode at a fixed rate with ·an electronic device and recording the time for removal with a counter. The circuit is designed so that the ,resultant reading on the counter is in acre-feet of water.

Compact pulse width modulation circuitry for silicon photomultiplier readout.

PubMed

Bieniosek, M F; Olcott, P D; Levin, C S

2013-08-07

The adoption of solid-state photodetectors for positron emission tomography (PET) system design and the interest in 3D interaction information from PET detectors has lead to an increasing number of readout channels in PET systems. To handle these additional readout channels, PET readout electronics should be simplified to reduce the power consumption, cost, and size of the electronics for a single channel. Pulse-width modulation (PWM), where detector pulses are converted to digital pulses with width proportional to the detected photon energy, promises to simplify PET readout by converting the signals to digital form at the beginning of the processing chain, and allowing a single time-to-digital converter to perform the data acquisition for many channels rather than routing many analogue channels and digitizing in the back end. Integrator based PWM systems, also known as charge-to-time converters (QTCs), are especially compact, reducing the front-end electronics to an op-amp integrator with a resistor discharge, and a comparator. QTCs, however, have a long dead-time during which dark count noise is integrated, reducing the output signal-to-noise ratio. This work presents a QTC based PWM circuit with a gated integrator that shows performance improvements over existing QTC based PWM. By opening and closing an analogue switch on the input of the integrator, the circuit can be controlled to integrate only the portions of the signal with a high signal-to-noise ratio. It also allows for multiplexing different detectors into the same PWM circuit while avoiding uncorrelated noise propagation between photodetector channels. Four gated integrator PWM circuits were built to readout the spatial channels of two position sensitive solid-state photomultiplier (PS-SSPM). Results show a 4 × 4 array 0.9 mm × 0.9 mm × 15 mm of LYSO crystals being identified on the 5 mm × 5 mm PS-SSPM at room temperature with no degradation for twofold multiplexing. In principle, much larger multiplexing ratios are possible, limited only by count rate issues.

Electron-beam-evaporated thin films of hafnium dioxide for fabricating electronic devices

DOE PAGES

Xiao, Zhigang; Kisslinger, Kim

2015-06-17

Thin films of hafnium dioxide (HfO 2) are widely used as the gate oxide in fabricating integrated circuits because of their high dielectric constants. In this paper, the authors report the growth of thin films of HfO 2 using e-beam evaporation, and the fabrication of complementary metal-oxide semiconductor (CMOS) integrated circuits using this HfO 2 thin film as the gate oxide. The authors analyzed the thin films using high-resolution transmission electron microscopy and electron diffraction, thereby demonstrating that the e-beam-evaporation-grown HfO 2 film has a polycrystalline structure and forms an excellent interface with silicon. Accordingly, we fabricated 31-stage CMOS ringmore » oscillator to test the quality of the HfO 2 thin film as the gate oxide, and obtained excellent rail-to-rail oscillation waveforms from it, denoting that the HfO 2 thin film functioned very well as the gate oxide.« less

Portable Cytometry Using Microscale Electronic Sensing

PubMed Central

Emaminejad, Sam; Paik, Kee-Hyun; Tabard-Cossa, Vincent; Javanmard, Mehdi

2015-01-01

In this manuscript, we present three different micro-impedance sensing architectures for electronic counting of cells and beads. The first method of sensing is based on using an open circuit sensing electrode integrated in a micro-pore, which measures the shift in potential as a micron-sized particle passes through. Our micro-pore, based on a funnel shaped microchannel, was fabricated in PDMS and was bound covalently to a glass substrate patterned with a gold open circuit electrode. The amplification circuitry was integrated onto a battery-powered custom printed circuit board. The second method is based on a three electrode differential measurement, which opens up the potential of using signal processing techniques to increase signal to noise ratio post measurement. The third architecture uses a contactless sensing approach, which significantly minimizes the cost of the consumable component of the impedance cytometer. We demonstrated proof of concept for the three sensing architectures by measuring the detected signal due to the passage of micron sized beads through the pore. PMID:27647950

A discrete component low-noise preamplifier readout for a linear (1×16) SiC photodiode array

NASA Astrophysics Data System (ADS)

Kahle, Duncan; Aslam, Shahid; Herrero, Federico A.; Waczynski, Augustyn

2016-09-01

A compact, low-noise and inexpensive preamplifier circuit has been designed and fabricated to optimally readout a common cathode (1×16) channel 4H-SiC Schottky photodiode array for use in ultraviolet experiments. The readout uses an operational amplifier with 10 pF capacitor in the feedback loop in parallel with a low leakage switch for each of the channels. This circuit configuration allows for reiterative sample, integrate and reset. A sampling technique is given to remove Johnson noise, enabling a femtoampere level readout noise performance. Commercial-off-the-shelf acquisition electronics are used to digitize the preamplifier analog signals. The data logging acquisition electronics has a different integration circuit, which allows the bandwidth and gain to be independently adjusted. Using this readout, photoresponse measurements across the array between spectral wavelengths 200 nm and 370 nm are made to establish the array pixels external quantum efficiency, current responsivity and noise equivalent power.

A Discrete Component Low-Noise Preamplifier Readout for a Linear (1x16) SiC Photodiode Array

NASA Technical Reports Server (NTRS)

Kahle, Duncan; Aslam, Shahid; Herrero, Frederico A.; Waczynski, Augustyn

2016-01-01

A compact, low-noise and inexpensive preamplifier circuit has been designed and fabricated to optimally readout a common cathode (1x16) channel 4H-SiC Schottky photodiode array for use in ultraviolet experiments. The readout uses an operational amplifier with 10 pF capacitor in the feedback loop in parallel with a low leakage switch for each of the channels. This circuit configuration allows for reiterative sample, integrate and reset. A sampling technique is given to remove Johnson noise, enabling a femtoampere level readout noise performance. Commercial-off-the-shelf acquisition electronics are used to digitize the preamplifier analogue signals. The data logging acquisition electronics has a different integration circuit, which allows the bandwidth and gain to be independently adjusted. Using this readout, photoresponse measurements across the array between spectral wavelengths 200 nm and 370 nm are made to establish the array pixels external quantum efficiency, current responsivity and noise equivalent power.

Design automation for integrated nonlinear logic circuits (Conference Presentation)

NASA Astrophysics Data System (ADS)

Van Vaerenbergh, Thomas; Pelc, Jason; Santori, Charles; Bose, Ranojoy; Kielpinski, Dave; Beausoleil, Raymond G.

2016-05-01

A key enabler of the IT revolution of the late 20th century was the development of electronic design automation (EDA) tools allowing engineers to manage the complexity of electronic circuits with transistor counts now reaching into the billions. Recently, we have been developing large-scale nonlinear photonic integrated logic circuits for next generation all-optical information processing. At this time a sufficiently powerful EDA-style software tool chain to design this type of complex circuits does not yet exist. Here we describe a hierarchical approach to automating the design and validation of photonic integrated circuits, which can scale to several orders of magnitude higher complexity than the state of the art. Most photonic integrated circuits developed today consist of a small number of components, and only limited hierarchy. For example, a simple photonic transceiver may contain on the order of 10 building-block components, consisting of grating couplers for photonic I/O, modulators, and signal splitters/combiners. Because this is relatively easy to lay out by hand (or simple script) existing photonic design tools have relatively little automation in comparison to electronics tools. But demonstrating all-optical logic will require significantly more complex photonic circuits containing up to 1,000 components, hence becoming infeasible to design manually. Our design framework is based off Python-based software from Luceda Photonics which provides an environment to describe components, simulate their behavior, and export design files (GDS) to foundries for fabrication. At a fundamental level, a photonic component is described as a parametric cell (PCell) similarly to electronics design. PCells are described by geometric characteristics of their layout. A critical part of the design framework is the implementation of PCells as Python objects. PCell objects can then use inheritance to simplify design, and hierarchical designs can be made by creating composite PCells (modules) which consist of primitive building-block PCells (components). To automatically produce layouts, we built on a construct provided by Luceda called a PlaceAndAutoRoute cell: we create a module component by supplying a list of child cells, and a list of the desired connections between the cells (e.g. the out0 port of a microring is connected to a grating coupler). This functionality allowed us to write algorithms to automatically lay out the components: for instance, by laying out the first component and walking through the list of connections to check to see if the next component is already placed or not. The placement and orientation of the new component is determined by minimizing the length of a connecting waveguide. Our photonic circuits also utilize electrical signals to tune the photonic elements (setting propagation phases or microring resonant frequencies via thermo-optical tuning): the algorithm also routes the contacts for the metal heaters to contact pads at the edge of the circuit being designed where it can be contacted by electrical probes. We are currently validating a test run fabricated over the summer, and will use detailed characterization results to prepare our final design cycle in which we aim to demonstrate complex operational logic circuits containing ~50-100 nonlinear resonators.

Microfabricated cylindrical ion trap

DOEpatents

Blain, Matthew G.

2005-03-22

A microscale cylindrical ion trap, having an inner radius of order one micron, can be fabricated using surface micromachining techniques and materials known to the integrated circuits manufacturing and microelectromechanical systems industries. Micromachining methods enable batch fabrication, reduced manufacturing costs, dimensional and positional precision, and monolithic integration of massive arrays of ion traps with microscale ion generation and detection devices. Massive arraying enables the microscale cylindrical ion trap to retain the resolution, sensitivity, and mass range advantages necessary for high chemical selectivity. The microscale CIT has a reduced ion mean free path, allowing operation at higher pressures with less expensive and less bulky vacuum pumping system, and with lower battery power than conventional- and miniature-sized ion traps. The reduced electrode voltage enables integration of the microscale cylindrical ion trap with on-chip integrated circuit-based rf operation and detection electronics (i.e., cell phone electronics). Therefore, the full performance advantages of microscale cylindrical ion traps can be realized in truly field portable, handheld microanalysis systems.

Maze solving automatons for self-healing of open interconnects: Modular add-on for circuit boards

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nair, Aswathi; Raghunandan, Karthik; Yaswant, Vaddi

We present the circuit board integration of a self-healing mechanism to repair open faults. The electric field driven mechanism physically restores fractured interconnects in electronic circuits and has the ability to solve mazes. The repair is performed by conductive particles dispersed in an insulating fluid. We demonstrate the integration of the healing module onto printed circuit boards and the ability of maze solving. We model and perform experiments on the influence of the geometry of conductive particles as well as the terminal impedances of the route on the healing efficiency. The typical heal rate is 10 μm/s with healed route havingmore » mean resistance of 8 kΩ across a 200 micron gap and depending on the materials and concentrations used.« less

Investigation of the use of microwave image line integrated circuits for use in radiometers and other microwave devices in X-band and above

NASA Technical Reports Server (NTRS)

Knox, R. M.; Toulios, P. P.; Onoda, G. Y.

1972-01-01

Program results are described in which the use of a/high permittivity rectangular dielectric image waveguide has been investigated for use in microwave and millimeter wavelength circuits. Launchers from rectangular metal waveguide to image waveguide are described. Theoretical and experimental evaluations of the radiation from curved image waveguides are given. Measurements of attenuation due to conductor and dielectric losses, adhesives, and gaps between the dielectric waveguide and the image plane are included. Various passive components are described and evaluations given. Investigations of various techniques for fabrication of image waveguide circuits using ceramic waveguides are also presented. Program results support the evaluation of the image line approach as an advantageous method for realizing low loss integrated electronic circuits for X-band and above.

Spatially controlled doping of two-dimensional SnS 2 through intercalation for electronics

DOE PAGES

Gong, Yongji; Yuan, Hongtao; Wu, Chun-Lan; ...

2018-02-26

Doped semiconductors are the most important building elements for modern electronic devices. In silicon-based integrated circuits, facile and controllable fabrication and integration of these materials can be realized without introducing a high-resistance interface. Besides, the emergence of two-dimensional (2D) materials enables the realization of atomically thin integrated circuits. However, the 2D nature of these materials precludes the use of traditional ion implantation techniques for carrier doping and further hinders device development10. Here, we demonstrate a solvent-based intercalation method to achieve p-type, n-type and degenerately doped semiconductors in the same parent material at the atomically thin limit. In contrast to naturallymore » grown n-type S-vacancy SnS 2, Cu intercalated bilayer SnS 2 obtained by this technique displays a hole field-effect mobility of ~40 cm 2 V -1 s -1, and the obtained Co-SnS 2 exhibits a metal-like behaviour with sheet resistance comparable to that of few-layer graphene. Combining this intercalation technique with lithography, an atomically seamless p–n–metal junction could be further realized with precise size and spatial control, which makes in-plane heterostructures practically applicable for integrated devices and other 2D materials. Therefore, the presented intercalation method can open a new avenue connecting the previously disparate worlds of integrated circuits and atomically thin materials.« less

Spatially controlled doping of two-dimensional SnS 2 through intercalation for electronics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gong, Yongji; Yuan, Hongtao; Wu, Chun-Lan

Doped semiconductors are the most important building elements for modern electronic devices. In silicon-based integrated circuits, facile and controllable fabrication and integration of these materials can be realized without introducing a high-resistance interface. Besides, the emergence of two-dimensional (2D) materials enables the realization of atomically thin integrated circuits. However, the 2D nature of these materials precludes the use of traditional ion implantation techniques for carrier doping and further hinders device development10. Here, we demonstrate a solvent-based intercalation method to achieve p-type, n-type and degenerately doped semiconductors in the same parent material at the atomically thin limit. In contrast to naturallymore » grown n-type S-vacancy SnS 2, Cu intercalated bilayer SnS 2 obtained by this technique displays a hole field-effect mobility of ~40 cm 2 V -1 s -1, and the obtained Co-SnS 2 exhibits a metal-like behaviour with sheet resistance comparable to that of few-layer graphene. Combining this intercalation technique with lithography, an atomically seamless p–n–metal junction could be further realized with precise size and spatial control, which makes in-plane heterostructures practically applicable for integrated devices and other 2D materials. Therefore, the presented intercalation method can open a new avenue connecting the previously disparate worlds of integrated circuits and atomically thin materials.« less

Spatially controlled doping of two-dimensional SnS2 through intercalation for electronics

NASA Astrophysics Data System (ADS)

Gong, Yongji; Yuan, Hongtao; Wu, Chun-Lan; Tang, Peizhe; Yang, Shi-Ze; Yang, Ankun; Li, Guodong; Liu, Bofei; van de Groep, Jorik; Brongersma, Mark L.; Chisholm, Matthew F.; Zhang, Shou-Cheng; Zhou, Wu; Cui, Yi

2018-04-01

Doped semiconductors are the most important building elements for modern electronic devices1. In silicon-based integrated circuits, facile and controllable fabrication and integration of these materials can be realized without introducing a high-resistance interface2,3. Besides, the emergence of two-dimensional (2D) materials enables the realization of atomically thin integrated circuits4-9. However, the 2D nature of these materials precludes the use of traditional ion implantation techniques for carrier doping and further hinders device development10. Here, we demonstrate a solvent-based intercalation method to achieve p-type, n-type and degenerately doped semiconductors in the same parent material at the atomically thin limit. In contrast to naturally grown n-type S-vacancy SnS2, Cu intercalated bilayer SnS2 obtained by this technique displays a hole field-effect mobility of 40 cm2 V-1 s-1, and the obtained Co-SnS2 exhibits a metal-like behaviour with sheet resistance comparable to that of few-layer graphene5. Combining this intercalation technique with lithography, an atomically seamless p-n-metal junction could be further realized with precise size and spatial control, which makes in-plane heterostructures practically applicable for integrated devices and other 2D materials. Therefore, the presented intercalation method can open a new avenue connecting the previously disparate worlds of integrated circuits and atomically thin materials.

High-Throughput Fabrication of Flexible and Transparent All-Carbon Nanotube Electronics.

PubMed

Chen, Yong-Yang; Sun, Yun; Zhu, Qian-Bing; Wang, Bing-Wei; Yan, Xin; Qiu, Song; Li, Qing-Wen; Hou, Peng-Xiang; Liu, Chang; Sun, Dong-Ming; Cheng, Hui-Ming

2018-05-01

This study reports a simple and effective technique for the high-throughput fabrication of flexible all-carbon nanotube (CNT) electronics using a photosensitive dry film instead of traditional liquid photoresists. A 10 in. sized photosensitive dry film is laminated onto a flexible substrate by a roll-to-roll technology, and a 5 µm pattern resolution of the resulting CNT films is achieved for the construction of flexible and transparent all-CNT thin-film transistors (TFTs) and integrated circuits. The fabricated TFTs exhibit a desirable electrical performance including an on-off current ratio of more than 10 5 , a carrier mobility of 33 cm 2 V -1 s -1 , and a small hysteresis. The standard deviations of on-current and mobility are, respectively, 5% and 2% of the average value, demonstrating the excellent reproducibility and uniformity of the devices, which allows constructing a large noise margin inverter circuit with a voltage gain of 30. This study indicates that a photosensitive dry film is very promising for the low-cost, fast, reliable, and scalable fabrication of flexible and transparent CNT-based integrated circuits, and opens up opportunities for future high-throughput CNT-based printed electronics.

Materials and noncoplanar mesh designs for integrated circuits with linear elastic responses to extreme mechanical deformations.

PubMed

Kim, Dae-Hyeong; Song, Jizhou; Choi, Won Mook; Kim, Hoon-Sik; Kim, Rak-Hwan; Liu, Zhuangjian; Huang, Yonggang Y; Hwang, Keh-Chih; Zhang, Yong-wei; Rogers, John A

2008-12-02

Electronic systems that offer elastic mechanical responses to high-strain deformations are of growing interest because of their ability to enable new biomedical devices and other applications whose requirements are impossible to satisfy with conventional wafer-based technologies or even with those that offer simple bendability. This article introduces materials and mechanical design strategies for classes of electronic circuits that offer extremely high stretchability, enabling them to accommodate even demanding configurations such as corkscrew twists with tight pitch (e.g., 90 degrees in approximately 1 cm) and linear stretching to "rubber-band" levels of strain (e.g., up to approximately 140%). The use of single crystalline silicon nanomaterials for the semiconductor provides performance in stretchable complementary metal-oxide-semiconductor (CMOS) integrated circuits approaching that of conventional devices with comparable feature sizes formed on silicon wafers. Comprehensive theoretical studies of the mechanics reveal the way in which the structural designs enable these extreme mechanical properties without fracturing the intrinsically brittle active materials or even inducing significant changes in their electrical properties. The results, as demonstrated through electrical measurements of arrays of transistors, CMOS inverters, ring oscillators, and differential amplifiers, suggest a valuable route to high-performance stretchable electronics.

Polymer planar lightwave circuit based hybrid-integrated coherent receiver for advanced modulation signals

NASA Astrophysics Data System (ADS)

Wang, Jin; Han, Yang; Liang, Zhongcheng; Chen, Yongjin

2012-11-01

Applying coherent detection technique to advanced modulation formats makes it possible to electronically compensate the signal impairments. A key issue for a successful deployment of coherent detection technique is the availability of cost-efficient and compact integrated receivers, which are composed of an optical 90° hybrid mixer and four photodiodes (PDs). In this work, three different types of optical hybrids are fabricated with polymer planar lightwave circuit (PLC), and hybridly integrated with four vertical backside illuminated III-V PDs. Their performances, such as the insertion loss, the transmission imbalance, the polarization dependence and the phase deviation of 90° hybrid will be discussed.

Organic–Inorganic Eu3+/Tb3+ codoped hybrid films for temperature mapping in integrated circuits

PubMed Central

Brites, Carlos D. S.; Lima, Patrícia P.; Silva, Nuno J. O.; Millán, Angel; Amaral, Vitor S.; Palacio, Fernando; Carlos, Luís D.

2013-01-01

The continuous decrease on the geometric size of electronic devices and integrated circuits generates higher local power densities and localized heating problems that cannot be characterized by conventional thermographic techniques. Here, a self-referencing intensity-based molecular thermometer involving a di-ureasil organic-inorganic hybrid thin film co-doped with Eu3+ and Tb3+ tris (β-diketonate) chelates is used to obtain the temperature map of a FR4 printed wiring board with spatio-temporal resolutions of 0.42 μm/4.8 ms. PMID:24790938

Fabrication Of High-Tc Superconducting Integrated Circuits

NASA Technical Reports Server (NTRS)

Bhasin, Kul B.; Warner, Joseph D.

1992-01-01

Microwave ring resonator fabricated to demonstrate process for fabrication of passive integrated circuits containing high-transition-temperature superconductors. Superconductors increase efficiencies of communication systems, particularly microwave communication systems, by reducing ohmic losses and dispersion of signals. Used to reduce sizes and masses and increase aiming accuracies and tracking speeds of millimeter-wavelength, electronically steerable antennas. High-Tc superconductors preferable for such applications because they operate at higher temperatures than low-Tc superconductors do, therefore, refrigeration systems needed to maintain superconductivity designed smaller and lighter and to consume less power.

Apparatus for millimeter-wave signal generation

DOEpatents

Vawter, G. Allen; Hietala, Vincent M.; Zolper, John C.; Mar, Alan; Hohimer, John P.

1999-01-01

An opto-electronic integrated circuit (OEIC) apparatus is disclosed for generating an electrical signal at a frequency .gtoreq.10 GHz. The apparatus, formed on a single substrate, includes a semiconductor ring laser for generating a continuous train of mode-locked lasing pulses and a high-speed photodetector for detecting the train of lasing pulses and generating the electrical signal therefrom. Embodiments of the invention are disclosed with an active waveguide amplifier coupling the semiconductor ring laser and the high-speed photodetector. The invention has applications for use in OEICs and millimeter-wave monolithic integrated circuits (MMICs).

Low-dielectric constant insulators for future integrated circuits and packages.

PubMed

Kohl, Paul A

2011-01-01

Future integrated circuits and packages will require extraordinary dielectric materials for interconnects to allow transistor advances to be translated into system-level advances. Exceedingly low-permittivity and low-loss materials are required at every level of the electronic system, from chip-level insulators to packages and printed wiring boards. In this review, the requirements and goals for future insulators are discussed followed by a summary of current state-of-the-art materials and technical approaches. Much work needs to be done for insulating materials and structures to meet future needs.

Low-noise heterodyne receiver for electron cyclotron emission imaging and microwave imaging reflectometry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tobias, B., E-mail: bjtobias@pppl.gov; Domier, C. W.; Luhmann, N. C.

2016-11-15

The critical component enabling electron cyclotron emission imaging (ECEI) and microwave imaging reflectometry (MIR) to resolve 2D and 3D electron temperature and density perturbations is the heterodyne imaging array that collects and downconverts radiated emission and/or reflected signals (50–150 GHz) to an intermediate frequency (IF) band (e.g. 0.1–18 GHz) that can be transmitted by a shielded coaxial cable for further filtering and detection. New circuitry has been developed for this task, integrating gallium arsenide (GaAs) monolithic microwave integrated circuits (MMICs) mounted on a liquid crystal polymer (LCP) substrate. The improved topology significantly increases electromagnetic shielding from out-of-band interference, leads tomore » 10× improvement in the signal-to-noise ratio, and dramatic cost savings through integration. The current design, optimized for reflectometry and edge radiometry on mid-sized tokamaks, has demonstrated >20 dB conversion gain in upper V-band (60-75 GHz). Implementation of the circuit in a multi-channel electron cyclotron emission imaging (ECEI) array will improve the diagnosis of edge-localized modes and fluctuations of the high-confinement, or H-mode, pedestal.« less

Low-noise heterodyne receiver for electron cyclotron emission imaging and microwave imaging reflectometry

DOE PAGES

Tobias, B.; Domier, C. W.; Luhmann, Jr., N. C.; ...

2016-07-25

The critical component enabling electron cyclotron emission imaging (ECEI) and microwave imaging reflectometry (MIR) to resolve 2D and 3D electron temperature and density perturbations is the heterodyne imaging array that collects and downconverts radiated emission and/or reflected signals (50-150 GHz) to an intermediate frequency (IF) band (e.g. 0.1-18 GHz) that can be transmitted by a shielded coaxial cable for further filtering and detection. New circuitry has been developed for this task, integrating gallium arsenide (GaAs) monolithic microwave integrated circuits (MMICs) mounted on a liquid crystal polymer (LCP) substrate. The improved topology significantly increases electromagnetic shielding from out-of-band interference, leads tomore » 10x improvement in the signal-to-noise ratio, and dramatic cost savings through integration. The current design, optimized for reflectometry and edge radiometry on mid-sized tokamaks, has demonstrated >20 dB conversion gain in upper V-band (60-75 GHz). As a result, implementation of the circuit in a multi-channel electron cyclotron emission imaging (ECEI) array will improve the diagnosis of edge-localized modes and fluctuations of the high-confinement, or H-mode, pedestal.« less

Electron Beam "Writes" Silicon On Sapphire

NASA Technical Reports Server (NTRS)

Heinemann, Klaus

1988-01-01

Method of growing silicon on sapphire substrate uses beam of electrons to aid growth of semiconductor material. Silicon forms as epitaxial film in precisely localized areas in micron-wide lines. Promising fabrication method for fast, densely-packed integrated circuits. Silicon deposited preferentially in contaminated substrate zones and in clean zone irradiated by electron beam. Electron beam, like surface contamination, appears to stimulate decomposition of silane atmosphere.

Integrated Electrode Arrays for Neuro-Prosthetic Implants

NASA Technical Reports Server (NTRS)

Brandon, Erik; Mojarradi, Mohammede

2003-01-01

Arrays of electrodes integrated with chip-scale packages and silicon-based integrated circuits have been proposed for use as medical electronic implants, including neuro-prosthetic devices that might be implanted in brains of patients who suffer from strokes, spinal-cord injuries, or amyotrophic lateral sclerosis. The electrodes of such a device would pick up signals from neurons in the cerebral cortex, and the integrated circuit would perform acquisition and preprocessing of signal data. The output of the integrated circuit could be used to generate, for example, commands for a robotic arm. Electrode arrays capable of acquiring electrical signals from neurons already exist, but heretofore, there has been no convenient means to integrate these arrays with integrated-circuit chips. Such integration is needed in order to eliminate the need for the extensive cabling now used to pass neural signals to data-acquisition and -processing equipment outside the body. The proposed integration would enable progress toward neuro-prostheses that would be less restrictive of patients mobility. An array of electrodes would comprise a set of thin wires of suitable length and composition protruding from and supported by a fine-pitch micro-ball grid array or chip-scale package (see figure). The associated integrated circuit would be mounted on the package face opposite the probe face, using the solder bumps (the balls of the ball grid array) to make the electrical connections between the probes and the input terminals of the integrated circuit. The key innovation is the insertion of probe wires of the appropriate length and material into the solder bumps through a reflow process, thereby fixing the probes in place and electrically connecting them with the integrated circuit. The probes could be tailored to any distribution of lengths and made of any suitable metal that could be drawn into fine wires. Furthermore, the wires could be coated with an insulating layer using anodization or other processes, to achieve the correct electrical impedance. The probe wires and the packaging materials must be biocompatible using such materials as lead-free solders. For protection, the chip and package can be coated with parylene.

Facilitating Integration of Electron Beam Lithography Devices with Interactive Videodisc, Computer-Based Simulation and Job Aids.

ERIC Educational Resources Information Center

Von Der Linn, Robert Christopher

A needs assessment of the Grumman E-Beam Systems Group identified the requirement for additional skill mastery for the engineers who assemble, integrate, and maintain devices used to manufacture integrated circuits. Further analysis of the tasks involved led to the decision to develop interactive videodisc, computer-based job aids to enable…

Silicon on insulator achieved using electrochemical etching

DOEpatents

McCarthy, A.M.

1997-10-07

Bulk crystalline silicon wafers are transferred after the completion of circuit fabrication to form thin films of crystalline circuitry on almost any support, such as metal, semiconductor, plastic, polymer, glass, wood, and paper. In particular, this technique is suitable to form silicon-on-insulator (SOI) wafers, whereby the devices and circuits formed exhibit superior performance after transfer due to the removal of the silicon substrate. The added cost of the transfer process to conventional silicon fabrication is insignificant. No epitaxial, lift-off, release or buried oxide layers are needed to perform the transfer of single or multiple wafers onto support members. The transfer process may be performed at temperatures of 50 C or less, permits transparency around the circuits and does not require post-transfer patterning. Consequently, the technique opens up new avenues for the use of integrated circuit devices in high-brightness, high-resolution video-speed color displays, reduced-thickness increased-flexibility intelligent cards, flexible electronics on ultrathin support members, adhesive electronics, touch screen electronics, items requiring low weight materials, smart cards, intelligent keys for encryption systems, toys, large area circuits, flexible supports, and other applications. The added process flexibility also permits a cheap technique for increasing circuit speed of market driven technologies such as microprocessors at little added expense. 57 figs.

Silicon on insulator achieved using electrochemical etching

DOEpatents

McCarthy, Anthony M.

1997-01-01

Bulk crystalline silicon wafers are transferred after the completion of circuit fabrication to form thin films of crystalline circuitry on almost any support, such as metal, semiconductor, plastic, polymer, glass, wood, and paper. In particular, this technique is suitable to form silicon-on-insulator (SOI) wafers, whereby the devices and circuits formed exhibit superior performance after transfer due to the removal of the silicon substrate. The added cost of the transfer process to conventional silicon fabrication is insignificant. No epitaxial, lift-off, release or buried oxide layers are needed to perform the transfer of single or multiple wafers onto support members. The transfer process may be performed at temperatures of 50.degree. C. or less, permits transparency around the circuits and does not require post-transfer patterning. Consequently, the technique opens up new avenues for the use of integrated circuit devices in high-brightness, high-resolution video-speed color displays, reduced-thickness increased-flexibility intelligent cards, flexible electronics on ultrathin support members, adhesive electronics, touch screen electronics, items requiring low weight materials, smart cards, intelligent keys for encryption systems, toys, large area circuits, flexible supports, and other applications. The added process flexibility also permits a cheap technique for increasing circuit speed of market driven technologies such as microprocessors at little added expense.

Flow sensor based on monolithic integration of organic light-emitting diodes (OLEDs) and CMOS circuits

NASA Astrophysics Data System (ADS)

Reckziegel, S.; Kreye, D.; Puegner, T.; Vogel, U.; Scholles, M.; Grillberger, C.; Fehse, K.

2009-02-01

In this paper we present an optoelectronic integrated circuit (OEIC) based on monolithic integration of organic lightemitting diodes (OLEDs) and CMOS technology. By the use of integrated circuits, photodetectors and highly efficient OLEDs on the same silicon chip, novel OEICs with combined sensors and actuating elements can be realized. The OLEDs are directly deposited on the CMOS top metal. The metal layer serves as OLED bottom electrode and determines the bright area. Furthermore, the area below the OLED electrodes can be used for integrated circuits. The monolithic integration of actuators, sensors and electronics on a common silicon substrate brings significant advantages in most sensory applications. The developed OEIC combines three different types of sensors: a reflective sensor, a color sensor and a particle flow sensor and is configured with an orange (597nm) emitting p-i-n OLED. We describe the architecture of such a monolithic OEIC and demonstrate a method to determine the velocity of a fluid being conveyed pneumatically in a transparent capillary. The integrated OLEDs illuminate the capillary with the flowing fluid. The fluid has a random reflection profile. Depending on the velocity and a random contrast difference, more or less light is reflected back to the substrate. The integrated photodiodes located at different fixed points detect the reflected light and using crosscorrelation, the velocity is calculated from the time in which contrast differences move over a fixed distance.

A high resolution on-chip delay sensor with low supply-voltage sensitivity for high-performance electronic systems.

PubMed

Sheng, Duo; Lai, Hsiu-Fan; Chan, Sheng-Min; Hong, Min-Rong

2015-02-13

An all-digital on-chip delay sensor (OCDS) circuit with high delay-measurement resolution and low supply-voltage sensitivity for efficient detection and diagnosis in high-performance electronic system applications is presented. Based on the proposed delay measurement scheme, the quantization resolution of the proposed OCDS can be reduced to several picoseconds. Additionally, the proposed cascade-stage delay measurement circuit can enhance immunity to supply-voltage variations of the delay measurement resolution without extra self-biasing or calibration circuits. Simulation results show that the delay measurement resolution can be improved to 1.2 ps; the average delay resolution variation is 0.55% with supply-voltage variations of ±10%. Moreover, the proposed delay sensor can be implemented in an all-digital manner, making it very suitable for high-performance electronic system applications as well as system-level integration.

Tribotronic Tuning Diode for Active Analog Signal Modulation.

PubMed

Zhou, Tao; Yang, Zhi Wei; Pang, Yaokun; Xu, Liang; Zhang, Chi; Wang, Zhong Lin

2017-01-24

Realizing active interaction with external environment/stimuli is a great challenge for current electronics. In this paper, a tribotronic tuning diode (TTD) is proposed by coupling a variable capacitance diode and a triboelectric nanogenerator in free-standing sliding mode. When the friction layer is sliding on the device surface for electrification, a reverse bias voltage is created and applied to the diode for tuning the junction capacitance. When the sliding distance increases from 0 to 25 mm, the capacitance of the TTD decreases from about 39 to 8 pF. The proposed TTD has been integrated into analog circuits and exhibited excellent performances in frequency modulation, phase shift, and filtering by sliding a finger. This work has demonstrated tunable diode and active analog signal modulation by tribotronics, which has great potential to replace ordinary variable capacitance diodes in various practical applications such as signal processing, electronic tuning circuits, precise tuning circuits, active sensor networks, electronic communications, remote controls, flexible electronics, etc.

Roadmap evolution: from NTRS to ITRS, from ITRS 2.0 to IRDS

NASA Astrophysics Data System (ADS)

Gargini, Paolo A.

2017-10-01

The semiconductor industry benefitted from roadmap guidance since the mid-60s. The roadmap anticipated and outlined the main needs of the semiconductor industry for years to come and identified future challenges and possible solutions. Making transistor smaller by means of advanced lithographic technologies enabled both increased integration levels and improved IC performance. The roadmap methodology allowed the removal of multiple "red brick walls". The NTRS and the ITRS constituted primarily a "bottom up" approach as standard microprocessors and memories where introduced at a blistering pace barely allowing time for system houses to integrate them in their products. The 1998 ITRS provided the vision that triggered research, development and manufacturing communities to develop a completely new transistor structure in addition to replacing aluminum interconnects with a more advanced technology. The advent of Foundries and Fabless companies transformed the electronics industry into a "top down" driven industry in the past 15 years. The ITRS adjusted to this new ecosystem and morphed into the International Roadmap for Devices and Systems (IRDS) sponsored by IEEE. The IRDS is addressing the requirements and needs of the renewed electronics industry. Furthermore, by the middle of the next decade the ability to layout integrated circuits in a 2D geometry grid will reach fundamental physical limits and the aggressive conversion to 3D architecture for integrated circuit must be pursued across the board as an avenue to continuously increasing transistor count and improving performance. EUV technology is finally approaching the manufacturing stage but with the advent of 3D monolithically integrated heterogeneous circuits approaching in the not-toodistant future should the semiconductor industry concentrate its resources on the next lithographic technology generation in order to enhance resolution or on providing a smooth transition to the new revolutionary 3D architecture of integrated circuits? It is essential for the whole semiconductor industry to come together and make fundamental choices leading to a cooperative and synchronized allocation of adequate resources to produce viable solutions that once introduced in a timely manner into manufacturing will enable the continuation of the growth of the electronic industry at a pace comparable or exceeding historical trends.

33 Years of Continuous Solar Radio Flux Observations

NASA Astrophysics Data System (ADS)

Monstein, Christian

2015-10-01

In 1982, after development and testing of several analog receiver concepts, I started continuous solar radio flux observations at 230 MHz. My instruments for the observations were based on cheap commercial components out of consumer TV electronics. The main components included a TV-tuner (at that time analog), intermediate frequency (IF) amplifier and video-detector taken from used TV sets. The 5.5 MHz wide video signal was fed into an integrating circuit, in fact a low pass filter, followed by dc-offset circuit and dc-amplifier built with four ua741 and CA3140 operational amplifier integrated circuits. At that time the signal was recorded with a Heathkit stripchart recorder and ink pen; an example is shown in figure 1.

Soft-Matter Printed Circuit Board with UV Laser Micropatterning.

PubMed

Lu, Tong; Markvicka, Eric J; Jin, Yichu; Majidi, Carmel

2017-07-05

When encapsulated in elastomer, micropatterned traces of Ga-based liquid metal (LM) can function as elastically deformable circuit wiring that provides mechanically robust electrical connectivity between solid-state elements (e.g., transistors, processors, and sensor nodes). However, LM-microelectronics integration is currently limited by challenges in rapid fabrication of LM circuits and the creation of vias between circuit terminals and the I/O pins of packaged electronics. In this study, we address both with a unique layup for soft-matter electronics in which traces of liquid-phase Ga-In eutectic (EGaIn) are patterned with UV laser micromachining (UVLM). The terminals of the elastomer-sealed LM circuit connect to the surface mounted chips through vertically aligned columns of EGaIn-coated Ag-Fe 2 O 3 microparticles that are embedded within an interfacial elastomer layer. The processing technique is compatible with conventional UVLM printed circuit board (PCB) prototyping and exploits the photophysical ablation of EGaIn on an elastomer substrate. Potential applications to wearable computing and biosensing are demonstrated with functional implementations in which soft-matter PCBs are populated with surface-mounted microelectronics.

Using NCAP to predict RFI effects in linear bipolar integrated circuits

NASA Astrophysics Data System (ADS)

Fang, T.-F.; Whalen, J. J.; Chen, G. K. C.

1980-11-01

Applications of the Nonlinear Circuit Analysis Program (NCAP) to calculate RFI effects in electronic circuits containing discrete semiconductor devices have been reported upon previously. The objective of this paper is to demonstrate that the computer program NCAP also can be used to calcuate RFI effects in linear bipolar integrated circuits (IC's). The IC's reported upon are the microA741 operational amplifier (op amp) which is one of the most widely used IC's, and a differential pair which is a basic building block in many linear IC's. The microA741 op amp was used as the active component in a unity-gain buffer amplifier. The differential pair was used in a broad-band cascode amplifier circuit. The computer program NCAP was used to predict how amplitude-modulated RF signals are demodulated in the IC's to cause undesired low-frequency responses. The predicted and measured results for radio frequencies in the 0.050-60-MHz range are in good agreement.

Apparatus and method for detecting and measuring changes in linear relationships between a number of high frequency signals

DOEpatents

Bittner, J.W.; Biscardi, R.W.

1991-03-19

An electronic measurement circuit is disclosed for high speed comparison of the relative amplitudes of a predetermined number of electrical input signals independent of variations in the magnitude of the sum of the signals. The circuit includes a high speed electronic switch that is operably connected to receive on its respective input terminals one of said electrical input signals and to have its common terminal serve as an input for a variable-gain amplifier-detector circuit that is operably connected to feed its output to a common terminal of a second high speed electronic switch. The respective terminals of the second high speed electronic switch are operably connected to a plurality of integrating sample and hold circuits, which in turn have their outputs connected to a summing logic circuit that is operable to develop first, second and third output voltages, the first output voltage being proportional to a predetermined ratio of sums and differences between the compared input signals, the second output voltage being proportional to a second summed ratio of predetermined sums and differences between said input signals, and the third output voltage being proportional to the sum of signals to the summing logic circuit. A servo system that is operably connected to receive said third output signal and compare it with a reference voltage to develop a slowly varying feedback voltage to control the variable-gain amplifier in said common amplifier-detector circuit in order to make said first and second output signals independent of variations in the magnitude of the sum of said input signals. 2 figures.

Apparatus and method for detecting and measuring changes in linear relationships between a number of high frequency signals

DOEpatents

Bittner, John W.; Biscardi, Richard W.

1991-01-01

An electronic measurement circuit for high speed comparison of the relative amplitudes of a predetermined number of electrical input signals independent of variations in the magnitude of the sum of the signals. The circuit includes a high speed electronic switch that is operably connected to receive on its respective input terminals one of said electrical input signals and to have its common terminal serve as an input for a variable-gain amplifier-detector circuit that is operably connected to feed its output to a common terminal of a second high speed electronic switch. The respective terminals of the second high speed electronic switch are operably connected to a plurality of integrating sample and hold circuits, which in turn have their outputs connected to a summing logic circuit that is operable to develop first, second and third output voltages, the first output voltage being proportional to a predetermined ratio of sums and differences between the compared input signals, the second output voltage being proportional to a second summed ratio of predetermined sums and differences between said input signals, and the third output voltage being proportional to the sum of signals to the summing logic circuit. A servo system that is operably connected to receive said third output signal and compare it with a reference voltage to develop a slowly varying feedback voltage to control the variable-gain amplifier in said common amplifier-detector circuit in order to make said first and second output signals independent of variations in the magnitude of the sum of said input signals.

Solar cell system having alternating current output

NASA Technical Reports Server (NTRS)

Evans, J. C., Jr. (Inventor)

1980-01-01

A monolithic multijunction solar cell was modified by fabricating an integrated circuit inverter on the back of the cell to produce a device capable of generating an alternating current output. In another embodiment, integrated curcuit power conditioning electronics was incorporated in a module containing a solar cell power supply.

High Density Polymer-Based Integrated Electgrode Array

DOEpatents

Maghribi, Mariam N.; Krulevitch, Peter A.; Davidson, James Courtney; Hamilton, Julie K.

2006-04-25

A high density polymer-based integrated electrode apparatus that comprises a central electrode body and a multiplicity of arms extending from the electrode body. The central electrode body and the multiplicity of arms are comprised of a silicone material with metal features in said silicone material that comprise electronic circuits.

Molecular-Scale Electronics: From Concept to Function.

PubMed

Xiang, Dong; Wang, Xiaolong; Jia, Chuancheng; Lee, Takhee; Guo, Xuefeng

2016-04-13

Creating functional electrical circuits using individual or ensemble molecules, often termed as "molecular-scale electronics", not only meets the increasing technical demands of the miniaturization of traditional Si-based electronic devices, but also provides an ideal window of exploring the intrinsic properties of materials at the molecular level. This Review covers the major advances with the most general applicability and emphasizes new insights into the development of efficient platform methodologies for building reliable molecular electronic devices with desired functionalities through the combination of programmed bottom-up self-assembly and sophisticated top-down device fabrication. First, we summarize a number of different approaches of forming molecular-scale junctions and discuss various experimental techniques for examining these nanoscale circuits in details. We then give a full introduction of characterization techniques and theoretical simulations for molecular electronics. Third, we highlight the major contributions and new concepts of integrating molecular functionalities into electrical circuits. Finally, we provide a critical discussion of limitations and main challenges that still exist for the development of molecular electronics. These analyses should be valuable for deeply understanding charge transport through molecular junctions, the device fabrication process, and the roadmap for future practical molecular electronics.

Metal oxide semiconductor thin-film transistors for flexible electronics

NASA Astrophysics Data System (ADS)

Petti, Luisa; Münzenrieder, Niko; Vogt, Christian; Faber, Hendrik; Büthe, Lars; Cantarella, Giuseppe; Bottacchi, Francesca; Anthopoulos, Thomas D.; Tröster, Gerhard

2016-06-01

The field of flexible electronics has rapidly expanded over the last decades, pioneering novel applications, such as wearable and textile integrated devices, seamless and embedded patch-like systems, soft electronic skins, as well as imperceptible and transient implants. The possibility to revolutionize our daily life with such disruptive appliances has fueled the quest for electronic devices which yield good electrical and mechanical performance and are at the same time light-weight, transparent, conformable, stretchable, and even biodegradable. Flexible metal oxide semiconductor thin-film transistors (TFTs) can fulfill all these requirements and are therefore considered the most promising technology for tomorrow's electronics. This review reflects the establishment of flexible metal oxide semiconductor TFTs, from the development of single devices, large-area circuits, up to entirely integrated systems. First, an introduction on metal oxide semiconductor TFTs is given, where the history of the field is revisited, the TFT configurations and operating principles are presented, and the main issues and technological challenges faced in the area are analyzed. Then, the recent advances achieved for flexible n-type metal oxide semiconductor TFTs manufactured by physical vapor deposition methods and solution-processing techniques are summarized. In particular, the ability of flexible metal oxide semiconductor TFTs to combine low temperature fabrication, high carrier mobility, large frequency operation, extreme mechanical bendability, together with transparency, conformability, stretchability, and water dissolubility is shown. Afterward, a detailed analysis of the most promising metal oxide semiconducting materials developed to realize the state-of-the-art flexible p-type TFTs is given. Next, the recent progresses obtained for flexible metal oxide semiconductor-based electronic circuits, realized with both unipolar and complementary technology, are reported. In particular, the realization of large-area digital circuitry like flexible near field communication tags and analog integrated circuits such as bendable operational amplifiers is presented. The last topic of this review is devoted for emerging flexible electronic systems, from foldable displays, power transmission elements to integrated systems for large-area sensing and data storage and transmission. Finally, the conclusions are drawn and an outlook over the field with a prediction for the future is provided.

Metal oxide semiconductor thin-film transistors for flexible electronics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Petti, Luisa; Vogt, Christian; Büthe, Lars

The field of flexible electronics has rapidly expanded over the last decades, pioneering novel applications, such as wearable and textile integrated devices, seamless and embedded patch-like systems, soft electronic skins, as well as imperceptible and transient implants. The possibility to revolutionize our daily life with such disruptive appliances has fueled the quest for electronic devices which yield good electrical and mechanical performance and are at the same time light-weight, transparent, conformable, stretchable, and even biodegradable. Flexible metal oxide semiconductor thin-film transistors (TFTs) can fulfill all these requirements and are therefore considered the most promising technology for tomorrow's electronics. This reviewmore » reflects the establishment of flexible metal oxide semiconductor TFTs, from the development of single devices, large-area circuits, up to entirely integrated systems. First, an introduction on metal oxide semiconductor TFTs is given, where the history of the field is revisited, the TFT configurations and operating principles are presented, and the main issues and technological challenges faced in the area are analyzed. Then, the recent advances achieved for flexible n-type metal oxide semiconductor TFTs manufactured by physical vapor deposition methods and solution-processing techniques are summarized. In particular, the ability of flexible metal oxide semiconductor TFTs to combine low temperature fabrication, high carrier mobility, large frequency operation, extreme mechanical bendability, together with transparency, conformability, stretchability, and water dissolubility is shown. Afterward, a detailed analysis of the most promising metal oxide semiconducting materials developed to realize the state-of-the-art flexible p-type TFTs is given. Next, the recent progresses obtained for flexible metal oxide semiconductor-based electronic circuits, realized with both unipolar and complementary technology, are reported. In particular, the realization of large-area digital circuitry like flexible near field communication tags and analog integrated circuits such as bendable operational amplifiers is presented. The last topic of this review is devoted for emerging flexible electronic systems, from foldable displays, power transmission elements to integrated systems for large-area sensing and data storage and transmission. Finally, the conclusions are drawn and an outlook over the field with a prediction for the future is provided.« less

A High-Temperature Piezoresistive Pressure Sensor with an Integrated Signal-Conditioning Circuit.

PubMed

Yao, Zong; Liang, Ting; Jia, Pinggang; Hong, Yingping; Qi, Lei; Lei, Cheng; Zhang, Bin; Xiong, Jijun

2016-06-18

This paper focuses on the design and fabrication of a high-temperature piezoresistive pressure sensor with an integrated signal-conditioning circuit, which consists of an encapsulated pressure-sensitive chip, a temperature compensation circuit and a signal-conditioning circuit. A silicon on insulation (SOI) material and a standard MEMS process are used in the pressure-sensitive chip fabrication, and high-temperature electronic components are adopted in the temperature-compensation and signal-conditioning circuits. The entire pressure sensor achieves a hermetic seal and can be operated long-term in the range of -50 °C to 220 °C. Unlike traditional pressure sensor output voltage ranges (in the dozens to hundreds of millivolts), the output voltage of this sensor is from 0 V to 5 V, which can significantly improve the signal-to-noise ratio and measurement accuracy in practical applications of long-term transmission based on experimental verification. Furthermore, because this flexible sensor's output voltage is adjustable, general follow-up pressure transmitter devices for voltage converters need not be used, which greatly reduces the cost of the test system. Thus, the proposed high-temperature piezoresistive pressure sensor with an integrated signal-conditioning circuit is expected to be highly applicable to pressure measurements in harsh environments.

A High-Temperature Piezoresistive Pressure Sensor with an Integrated Signal-Conditioning Circuit

PubMed Central

Yao, Zong; Liang, Ting; Jia, Pinggang; Hong, Yingping; Qi, Lei; Lei, Cheng; Zhang, Bin; Xiong, Jijun

2016-01-01

This paper focuses on the design and fabrication of a high-temperature piezoresistive pressure sensor with an integrated signal-conditioning circuit, which consists of an encapsulated pressure-sensitive chip, a temperature compensation circuit and a signal-conditioning circuit. A silicon on insulation (SOI) material and a standard MEMS process are used in the pressure-sensitive chip fabrication, and high-temperature electronic components are adopted in the temperature-compensation and signal-conditioning circuits. The entire pressure sensor achieves a hermetic seal and can be operated long-term in the range of −50 °C to 220 °C. Unlike traditional pressure sensor output voltage ranges (in the dozens to hundreds of millivolts), the output voltage of this sensor is from 0 V to 5 V, which can significantly improve the signal-to-noise ratio and measurement accuracy in practical applications of long-term transmission based on experimental verification. Furthermore, because this flexible sensor’s output voltage is adjustable, general follow-up pressure transmitter devices for voltage converters need not be used, which greatly reduces the cost of the test system. Thus, the proposed high-temperature piezoresistive pressure sensor with an integrated signal-conditioning circuit is expected to be highly applicable to pressure measurements in harsh environments. PMID:27322288

Materials and processing approaches for foundry-compatible transient electronics.

PubMed

Chang, Jan-Kai; Fang, Hui; Bower, Christopher A; Song, Enming; Yu, Xinge; Rogers, John A

2017-07-11

Foundry-based routes to transient silicon electronic devices have the potential to serve as the manufacturing basis for "green" electronic devices, biodegradable implants, hardware secure data storage systems, and unrecoverable remote devices. This article introduces materials and processing approaches that enable state-of-the-art silicon complementary metal-oxide-semiconductor (CMOS) foundries to be leveraged for high-performance, water-soluble forms of electronics. The key elements are ( i ) collections of biodegradable electronic materials (e.g., silicon, tungsten, silicon nitride, silicon dioxide) and device architectures that are compatible with manufacturing procedures currently used in the integrated circuit industry, ( ii ) release schemes and transfer printing methods for integration of multiple ultrathin components formed in this way onto biodegradable polymer substrates, and ( iii ) planarization and metallization techniques to yield interconnected and fully functional systems. Various CMOS devices and circuit elements created in this fashion and detailed measurements of their electrical characteristics highlight the capabilities. Accelerated dissolution studies in aqueous environments reveal the chemical kinetics associated with the underlying transient behaviors. The results demonstrate the technical feasibility for using foundry-based routes to sophisticated forms of transient electronic devices, with functional capabilities and cost structures that could support diverse applications in the biomedical, military, industrial, and consumer industries.

Materials and processing approaches for foundry-compatible transient electronics

NASA Astrophysics Data System (ADS)

Chang, Jan-Kai; Fang, Hui; Bower, Christopher A.; Song, Enming; Yu, Xinge; Rogers, John A.

2017-07-01

Foundry-based routes to transient silicon electronic devices have the potential to serve as the manufacturing basis for “green” electronic devices, biodegradable implants, hardware secure data storage systems, and unrecoverable remote devices. This article introduces materials and processing approaches that enable state-of-the-art silicon complementary metal-oxide-semiconductor (CMOS) foundries to be leveraged for high-performance, water-soluble forms of electronics. The key elements are (i) collections of biodegradable electronic materials (e.g., silicon, tungsten, silicon nitride, silicon dioxide) and device architectures that are compatible with manufacturing procedures currently used in the integrated circuit industry, (ii) release schemes and transfer printing methods for integration of multiple ultrathin components formed in this way onto biodegradable polymer substrates, and (iii) planarization and metallization techniques to yield interconnected and fully functional systems. Various CMOS devices and circuit elements created in this fashion and detailed measurements of their electrical characteristics highlight the capabilities. Accelerated dissolution studies in aqueous environments reveal the chemical kinetics associated with the underlying transient behaviors. The results demonstrate the technical feasibility for using foundry-based routes to sophisticated forms of transient electronic devices, with functional capabilities and cost structures that could support diverse applications in the biomedical, military, industrial, and consumer industries.

Automatic arc welding of propulsion system tubing in close proximity to sensitive electronic devices

NASA Technical Reports Server (NTRS)

Lumsden, J. M.; Whittlesey, A. C.

1981-01-01

The planned final assembly of the Galileo spacecraft propulsion system tubing, which involves welding in close proximity to sensitive electronics, raised significant concerns about the effects of electromagnetic coupling of weld energy on CMOS and other sensitive integrated circuits. A test program was established to assess the potential of an orbital arc welder and an RF-induction brazing machine to damage sensitive electronic equipment. Test parameters were varied to assess the effectiveness of typical transient suppression practices such as grounding, bonding, and shielding. A technique was developed to calibrate the hazard levels at the victim-circuit location; this technique is described along with the results and conclusions of the test program.

Automated processing of dynamic properties of intraventricular pressure by computer program and electronic circuit.

PubMed

Adler, D; Mahler, Y

1980-04-01

A procedure for automatic detection and digital processing of the maximum first derivative of the intraventricular pressure (dp/dtmax), time to dp/dtmax(t - dp/dt) and beat-to-beat intervals have been developed. The procedure integrates simple electronic circuits with a short program using a simple algorithm for the detection of the points of interest. The tasks of differentiating the pressure signal and detecting the onset of contraction were done by electronics, while the tasks of finding the values of dp/dtmax, t - dp/dt, beat-to-beat intervals and all computations needed were done by software. Software/hardware 'trade off' considerations and the accuracy and reliability of the system are discussed.

Complementary Metal-Oxide-Silicon (CMOS)-Memristor Hybrid Nanoelectronics for Advanced Encryption Standard (AES) Encryption

DTIC Science & Technology

2016-04-01

with Al top electrodes and Cu bottom electrodes. ................... 9 Figure 4. SPICE netlist structure...memory elements play a part in logic gate. 4.4.2 Simulation SPICE Simulation Program for Integrated Circuits Emphasis ( SPICE ) is a general-purpose...analog circuit simulator that was developed at the Electronics Research Laboratory of the University of California, Berkeley [6]. In 1975, SPICE

All-optical differential equation solver with constant-coefficient tunable based on a single microring resonator.

PubMed

Yang, Ting; Dong, Jianji; Lu, Liangjun; Zhou, Linjie; Zheng, Aoling; Zhang, Xinliang; Chen, Jianping

2014-07-04

Photonic integrated circuits for photonic computing open up the possibility for the realization of ultrahigh-speed and ultra wide-band signal processing with compact size and low power consumption. Differential equations model and govern fundamental physical phenomena and engineering systems in virtually any field of science and engineering, such as temperature diffusion processes, physical problems of motion subject to acceleration inputs and frictional forces, and the response of different resistor-capacitor circuits, etc. In this study, we experimentally demonstrate a feasible integrated scheme to solve first-order linear ordinary differential equation with constant-coefficient tunable based on a single silicon microring resonator. Besides, we analyze the impact of the chirp and pulse-width of input signals on the computing deviation. This device can be compatible with the electronic technology (typically complementary metal-oxide semiconductor technology), which may motivate the development of integrated photonic circuits for optical computing.

All-optical differential equation solver with constant-coefficient tunable based on a single microring resonator

PubMed Central

Yang, Ting; Dong, Jianji; Lu, Liangjun; Zhou, Linjie; Zheng, Aoling; Zhang, Xinliang; Chen, Jianping

2014-01-01

Photonic integrated circuits for photonic computing open up the possibility for the realization of ultrahigh-speed and ultra wide-band signal processing with compact size and low power consumption. Differential equations model and govern fundamental physical phenomena and engineering systems in virtually any field of science and engineering, such as temperature diffusion processes, physical problems of motion subject to acceleration inputs and frictional forces, and the response of different resistor-capacitor circuits, etc. In this study, we experimentally demonstrate a feasible integrated scheme to solve first-order linear ordinary differential equation with constant-coefficient tunable based on a single silicon microring resonator. Besides, we analyze the impact of the chirp and pulse-width of input signals on the computing deviation. This device can be compatible with the electronic technology (typically complementary metal-oxide semiconductor technology), which may motivate the development of integrated photonic circuits for optical computing. PMID:24993440

Gigahertz flexible graphene transistors for microwave integrated circuits.

PubMed

Yeh, Chao-Hui; Lain, Yi-Wei; Chiu, Yu-Chiao; Liao, Chen-Hung; Moyano, David Ricardo; Hsu, Shawn S H; Chiu, Po-Wen

2014-08-26

Flexible integrated circuits with complex functionalities are the missing link for the active development of wearable electronic devices. Here, we report a scalable approach to fabricate self-aligned graphene microwave transistors for the implementation of flexible low-noise amplifiers and frequency mixers, two fundamental building blocks of a wireless communication receiver. A devised AlOx T-gate structure is used to achieve an appreciable increase of device transconductance and a commensurate reduction of the associated parasitic resistance, thus yielding a remarkable extrinsic cutoff frequency of 32 GHz and a maximum oscillation frequency of 20 GHz; in both cases the operation frequency is an order of magnitude higher than previously reported. The two frequencies work at 22 and 13 GHz even when subjected to a strain of 2.5%. The gigahertz microwave integrated circuits demonstrated here pave the way for applications which require high flexibility and radio frequency operations.

'Soft' amplifier circuits based on field-effect ionic transistors.

PubMed

Boon, Niels; Olvera de la Cruz, Monica

2015-06-28

Soft materials can be used as the building blocks for electronic devices with extraordinary properties. We introduce a theoretical model for a field-effect transistor in which ions are the gated species instead of electrons. Our model incorporates readily-available soft materials, such as conductive porous membranes and polymer-electrolytes to represent a device that regulates ion currents and can be integrated as a component in larger circuits. By means of Nernst-Planck numerical simulations as well as an analytical description of the steady-state current we find that the responses of the system to various input voltages can be categorized into ohmic, sub-threshold, and active modes. This is fully analogous to what is known for the electronic field-effect transistor (FET). Pivotal FET properties such as the threshold voltage and the transconductance crucially depend on the half-cell redox potentials of the source and drain electrodes as well as on the polyelectrolyte charge density and the gate material work function. We confirm the analogy with the electronic FETs through numerical simulations of elementary amplifier circuits in which we successfully substitute the electronic transistor by an ionic transistor.

Active pixel sensor array with multiresolution readout

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Kemeny, Sabrina E. (Inventor); Pain, Bedabrata (Inventor)

1999-01-01

An imaging device formed as a monolithic complementary metal oxide semiconductor integrated circuit in an industry standard complementary metal oxide semiconductor process, the integrated circuit including a focal plane array of pixel cells, each one of the cells including a photogate overlying the substrate for accumulating photo-generated charge in an underlying portion of the substrate and a charge coupled device section formed on the substrate adjacent the photogate having a sensing node and at least one charge coupled device stage for transferring charge from the underlying portion of the substrate to the sensing node. There is also a readout circuit, part of which can be disposed at the bottom of each column of cells and be common to all the cells in the column. The imaging device can also include an electronic shutter formed on the substrate adjacent the photogate, and/or a storage section to allow for simultaneous integration. In addition, the imaging device can include a multiresolution imaging circuit to provide images of varying resolution. The multiresolution circuit could also be employed in an array where the photosensitive portion of each pixel cell is a photodiode. This latter embodiment could further be modified to facilitate low light imaging.

MOS Circuitry Would Detect Low-Energy Charged Particles

NASA Technical Reports Server (NTRS)

Sinha, Mahadeva; Wadsworth, Mark

2003-01-01

Metal oxide semiconductor (MOS) circuits for measuring spatially varying intensities of beams of low-energy charged particles have been developed. These circuits are intended especially for use in measuring fluxes of ions with spatial resolution along the focal planes of mass spectrometers. Unlike prior mass spectrometer focal-plane detectors, these MOS circuits would not be based on ion-induced generation of electrons, and photons; instead, they would be based on direct detection of the electric charges of the ions. Hence, there would be no need for microchannel plates (for ion-to-electron conversion), phosphors (for electron-to-photon conversion), and photodetectors (for final detection) -- components that degrade spatial resolution and contribute to complexity and size. The developmental circuits are based on linear arrays of charge-coupled devices (CCDs) with associated readout circuitry (see figure). They resemble linear CCD photodetector arrays, except that instead of a photodetector, each pixel contains a capacitive charge sensor. The capacitor in each sensor comprises two electrodes (typically made of aluminum) separated by a layer of insulating material. The exposed electrode captures ions and accumulates their electric charges during signal-integration periods.

Simulation of absolute amplitudes of ultrasound signals using equivalent circuits.

PubMed

Johansson, Jonny; Martinsson, Pär-Erik; Delsing, Jerker

2007-10-01

Equivalent circuits for piezoelectric devices and ultrasonic transmission media can be used to cosimulate electronics and ultrasound parts in simulators originally intended for electronics. To achieve efficient system-level optimization, it is important to simulate correct, absolute amplitude of the ultrasound signal in the system, as this determines the requirements on the electronics regarding dynamic range, circuit noise, and power consumption. This paper presents methods to achieve correct, absolute amplitude of an ultrasound signal in a simulation of a pulse-echo system using equivalent circuits. This is achieved by taking into consideration loss due to diffraction and the effect of the cable that connects the electronics and the piezoelectric transducer. The conductive loss in the transmission line that models the propagation media of the ultrasound pulse is used to model the loss due to diffraction. Results show that the simulated amplitude of the echo follows measured values well in both near and far fields, with an offset of about 10%. The use of a coaxial cable introduces inductance and capacitance that affect the amplitude of a received echo. Amplitude variations of 60% were observed when the cable length was varied between 0.07 m and 2.3 m, with simulations predicting similar variations. The high precision in the achieved results show that electronic design and system optimization can rely on system simulations alone. This will simplify the development of integrated electronics aimed at ultrasound systems.

Displacement Damage in Bipolar Linear Integrated Circuits

NASA Technical Reports Server (NTRS)

Rax, B. G.; Johnston, A. H.; Miyahira, T.

2000-01-01

Although many different processes can be used to manufacture linear integrated circuits, the process that is used for most circuits is optimized for high voltage -- a total power supply voltage of about 40 V -- and low cost. This process, which has changed little during the last twenty years, uses lateral and substrate p-n-p transistors. These p-n-p transistors have very wide base regions, increasing their sensitivity to displacement damage from electrons and protons. Although displacement damage effects can be easily treated for individual transistors, the net effect on linear circuits can be far more complex because circuit operation often depends on the interaction of several internal transistors. Note also that some circuits are made with more advanced processes with much narrower base widths. Devices fabricated with these newer processes are not expected to be significantly affected by displacement damage for proton fluences below 1 x 10(exp 12) p/sq cm. This paper discusses displacement damage in linear integrated circuits with more complex failure modes than those exhibited by simpler devices, such as the LM111 comparator, where the dominant response mode is gain degradation of the input transistor. Some circuits fail catastrophically at much lower equivalent total dose levels compared to tests with gamma rays. The device works satisfactorily up to nearly 1 Mrad(Si) when it is irradiated with gamma rays, but fails catastrophically between 50 and 70 krad(Si) when it is irradiated with protons.

"Green" electronics: biodegradable and biocompatible materials and devices for sustainable future.

PubMed

Irimia-Vladu, Mihai

2014-01-21

"Green" electronics represents not only a novel scientific term but also an emerging area of research aimed at identifying compounds of natural origin and establishing economically efficient routes for the production of synthetic materials that have applicability in environmentally safe (biodegradable) and/or biocompatible devices. The ultimate goal of this research is to create paths for the production of human- and environmentally friendly electronics in general and the integration of such electronic circuits with living tissue in particular. Researching into the emerging class of "green" electronics may help fulfill not only the original promise of organic electronics that is to deliver low-cost and energy efficient materials and devices but also achieve unimaginable functionalities for electronics, for example benign integration into life and environment. This Review will highlight recent research advancements in this emerging group of materials and their integration in unconventional organic electronic devices.

Chemistry integrated circuit: chemical system on a complementary metal oxide semiconductor integrated circuit.

PubMed

Nakazato, Kazuo

2014-03-28

By integrating chemical reactions on a large-scale integration (LSI) chip, new types of device can be created. For biomedical applications, monolithically integrated sensor arrays for potentiometric, amperometric and impedimetric sensing of biomolecules have been developed. The potentiometric sensor array detects pH and redox reaction as a statistical distribution of fluctuations in time and space. For the amperometric sensor array, a microelectrode structure for measuring multiple currents at high speed has been proposed. The impedimetric sensor array is designed to measure impedance up to 10 MHz. The multimodal sensor array will enable synthetic analysis and make it possible to standardize biosensor chips. Another approach is to create new functional devices by integrating molecular systems with LSI chips, for example image sensors that incorporate biological materials with a sensor array. The quantum yield of the photoelectric conversion of photosynthesis is 100%, which is extremely difficult to achieve by artificial means. In a recently developed process, a molecular wire is plugged directly into a biological photosynthetic system to efficiently conduct electrons to a gold electrode. A single photon can be detected at room temperature using such a system combined with a molecular single-electron transistor.

HEMT Amplifiers and Equipment for their On-Wafer Testing

NASA Technical Reports Server (NTRS)

Fung, King man; Gaier, Todd; Samoska, Lorene; Deal, William; Radisic, Vesna; Mei, Xiaobing; Lai, Richard

2008-01-01

Power amplifiers comprising InP-based high-electron-mobility transistors (HEMTs) in coplanar-waveguide (CPW) circuits designed for operation at frequencies of hundreds of gigahertz, and a test set for onwafer measurement of their power levels have been developed. These amplifiers utilize an advanced 35-nm HEMT monolithic microwave integrated-circuit (MMIC) technology and have potential utility as local-oscillator drivers and power sources in future submillimeter-wavelength heterodyne receivers and imaging systems. The test set can reduce development time by enabling rapid output power characterization, not only of these and similar amplifiers, but also of other coplanar-waveguide power circuits, without the necessity of packaging the circuits.

Ultralow-noise readout circuit with an avalanche photodiode: toward a photon-number-resolving detector.

PubMed

Tsujino, Kenji; Akiba, Makoto; Sasaki, Masahide

2007-03-01

The charge-integration readout circuit was fabricated to achieve an ultralow-noise preamplifier for photoelectrons generated in an avalanche photodiode with linear mode operation at 77 K. To reduce the various kinds of noise, the capacitive transimpedance amplifier was used and consisted of low-capacitance circuit elements that were cooled with liquid nitrogen. As a result, the readout noise is equal to 3.0 electrons averaged for a period of 40 ms. We discuss the requirements for avalanche photodiodes to achieve photon-number-resolving detectors below this noise level.

Thermal Peak Management Using Organic Phase Change Materials for Latent Heat Storage in Electronic Applications

PubMed Central

Maxa, Jacob; Novikov, Andrej; Nowottnick, Mathias

2017-01-01

Modern high power electronics devices consists of a large amount of integrated circuits for switching and supply applications. Beside the benefits, the technology exhibits the problem of an ever increasing power density. Nowadays, heat sinks that are directly mounted on a device, are used to reduce the on-chip temperature and dissipate the thermal energy to the environment. This paper presents a concept of a composite coating for electronic components on printed circuit boards or electronic assemblies that is able to buffer a certain amount of thermal energy, dissipated from a device. The idea is to suppress temperature peaks in electronic components during load peaks or electronic shorts, which otherwise could damage or destroy the device, by using a phase change material to buffer the thermal energy. The phase change material coating could be directly applied on the chip package or the PCB using different mechanical retaining jigs.

Printed dose-recording tag based on organic complementary circuits and ferroelectric nonvolatile memories

PubMed Central

Nga Ng, Tse; Schwartz, David E.; Mei, Ping; Krusor, Brent; Kor, Sivkheng; Veres, Janos; Bröms, Per; Eriksson, Torbjörn; Wang, Yong; Hagel, Olle; Karlsson, Christer

2015-01-01

We have demonstrated a printed electronic tag that monitors time-integrated sensor signals and writes to nonvolatile memories for later readout. The tag is additively fabricated on flexible plastic foil and comprises a thermistor divider, complementary organic circuits, and two nonvolatile memory cells. With a supply voltage below 30 V, the threshold temperatures can be tuned between 0 °C and 80 °C. The time-temperature dose measurement is calibrated for minute-scale integration. The two memory bits are sequentially written in a thermometer code to provide an accumulated dose record. PMID:26307438

77 FR 59003 - Notice of Receipt of Complaint; Solicitation of Comments Relating to the Public Interest

Federal Register 2010, 2011, 2012, 2013, 2014

2012-09-25

... Certain Integrated Circuit Chips and Products Containing the Same, DN 2915 the Commission is soliciting... accessed on the Commission's electronic docket (EDIS) at http://edis.usitc.gov , and will be available for....gov ). The public record for this investigation may be viewed on the Commission's electronic docket...

76 FR 51395 - Notice of Receipt of Complaint; Solicitation of Comments Relating to the Public Interest

Federal Register 2010, 2011, 2012, 2013, 2014

2011-08-18

... Certain Digital Televisions Containing Integrated Circuit Devices and Components Thereof, DN 2840; the... accessed on the Commission's electronic docket (EDIS) at http://edis.usitc.gov , and will be available for....gov ). The public record for this investigation may be viewed on the Commission's electronic docket...

77 FR 29689 - Receipt of Amended Complaint; Solicitation of Comments Relating to the Public Interest

Federal Register 2010, 2011, 2012, 2013, 2014

2012-05-18

... complaint entitled Certain Radio Frequency Integrated Circuits and Devices Containing Same, DN 2877; the... of the complaint can be accessed on the Commission's electronic docket (EDIS) at http://edis.usitc... viewed on the Commission's electronic docket (EDIS) at http://edis.usitc.gov . Hearing-impaired persons...

77 FR 10556 - Receipt of Complaint; Solicitation of Comments Relating to the Public Interest

Federal Register 2010, 2011, 2012, 2013, 2014

2012-02-22

... Certain Radio Frequency Integrated Circuits and Devices Containing Same, DN 2877; the Commission is... accessed on the Commission's electronic docket (EDIS) at http://edis.usitc.gov , and will be available for....gov ). The public record for this investigation may be viewed on the Commission's electronic docket...

A long time low drift integrator with temperature control

NASA Astrophysics Data System (ADS)

Zhang, Donglai; Yan, Xiaolan; Zhang, Enchao; Pan, Shimin

2016-10-01

The output of an operational amplifier always contains signals that could not have been predicted, even with knowledge of the input and an accurately determined closed-loop transfer function. These signals lead to integrator zero-drift over time. A new type of integrator system with a long-term low-drift characteristic has therefore been designed. The integrator system is composed of a temperature control module and an integrator module. The aluminum printed circuit board of the integrator is glued to a thermoelectric cooler to maintain the electronic components at a stable temperature. The integration drift is automatically compensated using an analog-to-digital converter/proportional integration/digital-to-analog converter control circuit. Performance testing in a standard magnet shows that the proposed integrator, which has an integration time constant of 10 ms, has a low integration drift (<5 mV) over 1000 s after repeated measurements. The integrator can be used for magnetic flux measurements in most tokamaks and in the wire rope nondestructive test.

A long time low drift integrator with temperature control.

PubMed

Zhang, Donglai; Yan, Xiaolan; Zhang, Enchao; Pan, Shimin

2016-10-01

The output of an operational amplifier always contains signals that could not have been predicted, even with knowledge of the input and an accurately determined closed-loop transfer function. These signals lead to integrator zero-drift over time. A new type of integrator system with a long-term low-drift characteristic has therefore been designed. The integrator system is composed of a temperature control module and an integrator module. The aluminum printed circuit board of the integrator is glued to a thermoelectric cooler to maintain the electronic components at a stable temperature. The integration drift is automatically compensated using an analog-to-digital converter/proportional integration/digital-to-analog converter control circuit. Performance testing in a standard magnet shows that the proposed integrator, which has an integration time constant of 10 ms, has a low integration drift (<5 mV) over 1000 s after repeated measurements. The integrator can be used for magnetic flux measurements in most tokamaks and in the wire rope nondestructive test.

Total-dose radiation effects data for semiconductor devices. 1985 Supplement. Volume 2, part B

NASA Technical Reports Server (NTRS)

Martin, K. E.; Gauthier, M. K.; Coss, J. R.; Dantas, A. R. V.; Price, W. E.

1986-01-01

Steady-state, total-dose radiation test data are provided in graphic format, for use by electronic designers and other personnel using semiconductor devices in a radiation environment. The data were generated by JPL for various NASA space programs. The document is in two volumes: Volume 1 provides data on diodes, bipolar transistors, field effect transistors, and miscellaneous semiconductor types, and Volume 2 (Parts A and B) provides data on integrated circuits. The data are presented in graphic, tabular, and/or narrative format, depending on the complexity of the integrated circuit. Most tests were done steady-state 2.5-MeV electron beam. However, some radiation exposures were made with a Cobalt-60 gamma ray source, the results of which should be regarded as only an approximate measure of the radiation damage that would be incurred by an equivalent electron dose. All data were generated in support of NASA space programs by the JPL Radiation Effects and Testing Group (514).

Advanced testing of the DEPFET minimatrix particle detector

NASA Astrophysics Data System (ADS)

Andricek, L.; Kodyš, P.; Koffmane, C.; Ninkovic, J.; Oswald, C.; Richter, R.; Ritter, A.; Rummel, S.; Scheirich, J.; Wassatsch, A.

2012-01-01

The DEPFET (DEPleted Field Effect Transistor) is an active pixel particle detector with a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) integrated in each pixel, providing first amplification stage of readout electronics. Excellent signal over noise performance is gained this way. The DEPFET sensor will be used as a vertex detector in the Belle II experiment at SuperKEKB, electron-positron collider in Japan. The vertex detector will be composed of two layers of pixel detectors (DEPFET) and four layers of strip detectors. The DEPFET sensor requires switching and current readout circuits for its operation. These circuits have been designed as ASICs (Application Specific Integrated Circuits) in several different versions, but they provide insufficient flexibility for precise detector testing. Therefore, a test system with a flexible control cycle range and minimal noise has been designed for testing and characterizing of small detector prototypes (Minimatrices). Sensors with different design layouts and thicknesses are produced in order to evaluate and select the one with the best performance for the Belle II application. Description of the test system as well as measurement results are presented.

Radiation effects on electronic parts

NASA Technical Reports Server (NTRS)

Johnson, W. S.

1971-01-01

A search of literature concerning the long term effects of nuclear radiation on electronic parts was conducted to determine the effects of radiation fields encountered on deep space missions to parts used in the Pioneer Spacecraft. Topics discussed include: the various types of radiation the spacecraft will encounter, effects of radiation on electronic parts, and estimates of the damage thresholds for transistors and integrated circuits used on the Pioneer Spacecraft.

Highly Flexible Hybrid CMOS Inverter Based on Si Nanomembrane and Molybdenum Disulfide.

PubMed

Das, Tanmoy; Chen, Xiang; Jang, Houk; Oh, Il-Kwon; Kim, Hyungjun; Ahn, Jong-Hyun

2016-11-01

2D semiconductor materials are being considered for next generation electronic device application such as thin-film transistors and complementary metal-oxide-semiconductor (CMOS) circuit due to their unique structural and superior electronics properties. Various approaches have already been taken to fabricate 2D complementary logics circuits. However, those CMOS devices mostly demonstrated based on exfoliated 2D materials show the performance of a single device. In this work, the design and fabrication of a complementary inverter is experimentally reported, based on a chemical vapor deposition MoS 2 n-type transistor and a Si nanomembrane p-type transistor on the same substrate. The advantages offered by such CMOS configuration allow to fabricate large area wafer scale integration of high performance Si technology with transition-metal dichalcogenide materials. The fabricated hetero-CMOS inverters which are composed of two isolated transistors exhibit a novel high performance air-stable voltage transfer characteristic with different supply voltages, with a maximum voltage gain of ≈16, and sub-nano watt power consumption. Moreover, the logic gates have been integrated on a plastic substrate and displayed reliable electrical properties paving a realistic path for the fabrication of flexible/transparent CMOS circuits in 2D electronics. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Materials and noncoplanar mesh designs for integrated circuits with linear elastic responses to extreme mechanical deformations

PubMed Central

Kim, Dae-Hyeong; Song, Jizhou; Choi, Won Mook; Kim, Hoon-Sik; Kim, Rak-Hwan; Liu, Zhuangjian; Huang, Yonggang Y.; Hwang, Keh-Chih; Zhang, Yong-wei; Rogers, John A.

2008-01-01

Electronic systems that offer elastic mechanical responses to high-strain deformations are of growing interest because of their ability to enable new biomedical devices and other applications whose requirements are impossible to satisfy with conventional wafer-based technologies or even with those that offer simple bendability. This article introduces materials and mechanical design strategies for classes of electronic circuits that offer extremely high stretchability, enabling them to accommodate even demanding configurations such as corkscrew twists with tight pitch (e.g., 90° in ≈1 cm) and linear stretching to “rubber-band” levels of strain (e.g., up to ≈140%). The use of single crystalline silicon nanomaterials for the semiconductor provides performance in stretchable complementary metal-oxide-semiconductor (CMOS) integrated circuits approaching that of conventional devices with comparable feature sizes formed on silicon wafers. Comprehensive theoretical studies of the mechanics reveal the way in which the structural designs enable these extreme mechanical properties without fracturing the intrinsically brittle active materials or even inducing significant changes in their electrical properties. The results, as demonstrated through electrical measurements of arrays of transistors, CMOS inverters, ring oscillators, and differential amplifiers, suggest a valuable route to high-performance stretchable electronics. PMID:19015528

Advanced Fabrication Processes for Superconducting Very Large Scale Integrated Circuits

DTIC Science & Technology

2015-10-13

transistors. There are several reasons for this gigantic disparity: insufficient funding and lack of profit-driven investments in superconductor ...Inductance of circuit structures for MIT LL superconductor electronics fabrication process with 8 niobium layers,” IEEE Trans. Appl. Supercond., vol...vol. 25, No. 3, 1301704, June 2015. [7] V. Ambegaokar and A. Baratoff, “Tunneling between superconductors ,” Phys. Rev. Lett., vol. 10, no. 11, pp

Integrated Circuit For Simulation Of Neural Network

NASA Technical Reports Server (NTRS)

Thakoor, Anilkumar P.; Moopenn, Alexander W.; Khanna, Satish K.

1988-01-01

Ballast resistors deposited on top of circuit structure. Cascadable, programmable binary connection matrix fabricated in VLSI form as basic building block for assembly of like units into content-addressable electronic memory matrices operating somewhat like networks of neurons. Connections formed during storage of data, and data recalled from memory by prompting matrix with approximate or partly erroneous signals. Redundancy in pattern of connections causes matrix to respond with correct stored data.

Extremely Bendable, High-Performance Integrated Circuits Using Semiconducting Carbon Nanotube Networks for Digital, Analog, and Radio-Frequency Applications

DTIC Science & Technology

2012-02-07

circuits on mechanically flexible substrates for digital, analog and radio frequency applications. The asobtained thin-film transistors ( TFTs ) exhibit... flexible substrates for digital, analog and radio frequency applications. The as- obtained thin-film transistors ( TFTs ) exhibit highly uniform device...LCD) and organic light- emitting diode ( OLED ) displays lack the transparency and flexibility and are thus unsuitable for flexible electronic

Microwave processed NiMg ferrite: Studies on structural and magnetic properties

NASA Astrophysics Data System (ADS)

Chandra Babu Naidu, K.; Madhuri, W.

2016-12-01

Ferrites are magnetic semiconductors realizing an important role in electrical and electronic circuits where electrical and magnetic property coupling is required. Though ferrite materials are known for a long time, there is a large scope in the improvement of their properties (vice sintering and frequency dependence of electrical and magnetic properties) with the current technological trends. Forth coming technology is aimed at miniaturization and smart gadgets, electrical components like inductors and transformers cannot be included in integrated circuits. These components are incorporated into the circuit as surface mount devices whose fabrication involves low temperature co-firing of ceramics and microwave monolithic integrated circuits technologies. These technologies demand low temperature sinter-ability of ferrites. This article presents low temperature microwave sintered Ni-Mg ferrites of general chemical formula Ni1-xMgxFe2O4 (x=0, 0.2, 0.4, 0.5, 0.6, 0.8, 1) for potential applications as transformer core materials. The series of ferrites are characterized using X-ray diffractometer, scanning electron microscopy, Fourier transform infrared and vibrating sample magnetometer for investigating structural, morphological and magnetic properties respectively. The initial permeability is studied with magnesium content, temperature and frequency in the temperature range of 308 K-873 K and 42 Hz-5 MHz.

Quantum cascade lasers grown on silicon.

PubMed

Nguyen-Van, Hoang; Baranov, Alexei N; Loghmari, Zeineb; Cerutti, Laurent; Rodriguez, Jean-Baptiste; Tournet, Julie; Narcy, Gregoire; Boissier, Guilhem; Patriarche, Gilles; Bahriz, Michael; Tournié, Eric; Teissier, Roland

2018-05-08

Technological platforms offering efficient integration of III-V semiconductor lasers with silicon electronics are eagerly awaited by industry. The availability of optoelectronic circuits combining III-V light sources with Si-based photonic and electronic components in a single chip will enable, in particular, the development of ultra-compact spectroscopic systems for mass scale applications. The first circuits of such type were fabricated using heterogeneous integration of semiconductor lasers by bonding the III-V chips onto silicon substrates. Direct epitaxial growth of interband III-V laser diodes on silicon substrates has also been reported, whereas intersubband emitters grown on Si have not yet been demonstrated. We report the first quantum cascade lasers (QCLs) directly grown on a silicon substrate. These InAs/AlSb QCLs grown on Si exhibit high performances, comparable with those of the devices fabricated on their native InAs substrate. The lasers emit near 11 µm, the longest emission wavelength of any laser integrated on Si. Given the wavelength range reachable with InAs/AlSb QCLs, these results open the way to the development of a wide variety of integrated sensors.

Integrating amplifiers using cooled JFETs

NASA Technical Reports Server (NTRS)

Low, F. J.

1984-01-01

It is shown how a simple integrating amplifier based on commercially available JFET and MOSFET switches can be used to measure photocurrents from detectors with noise levels as low as 1.6 x 10 to the -18th A/root Hz (10 electrons/sec). A figure shows the basic circuit, along with the waveform at the output. The readout is completely nondestructive; the reset noise does not contribute since sampling of the accumulated charge occurs between resets which are required only when the stored charge has reached a very high level. The storage capacity ranges from 10 to the 6th to 10 to the 9th electrons, depending on detector parameters and linearity requirements. Data taken with an Si:Sb detector operated at 24 microns are presented. The responsivity agrees well with the value obtained by Young et al. (1981) in the transimpedance amplifier circuit. The data are seen as indicating that extremely low values of NEP can be obtained for integration times of 1 sec and that longer integrations continue to improve the SNR at a rate faster than the square root of time when background noise is not present.

A novel interface circuit for triboelectric nanogenerator

NASA Astrophysics Data System (ADS)

Yu, Wuqi; Ma, Jiahao; Zhang, Zhaohua; Ren, Tianling

2017-10-01

For most triboelectric nanogenerators (TENGs), the electric output should be a short AC pulse, which has the common characteristic of high voltage but low current. Thus it is necessary to convert the AC to DC and store the electric energy before driving conventional electronics. The traditional AC voltage regulator circuit which commonly consists of transformer, rectifier bridge, filter capacitor, and voltage regulator diode is not suitable for the TENG because the transformer’s consumption of power is appreciable if the TENG output is small. This article describes an innovative design of an interface circuit for a triboelectric nanogenerator that is transformerless and easily integrated. The circuit consists of large-capacity electrolytic capacitors that can realize to intermittently charge lithium-ion batteries and the control section contains the charging chip, the rectifying circuit, a comparator chip and switch chip. More important, the whole interface circuit is completely self-powered and self-controlled. Meanwhile, the chip is widely used in the circuit, so it is convenient to integrate into PCB. In short, this work presents a novel interface circuit for TENGs and makes progress to the practical application and industrialization of nanogenerators. Project supported by the National Natural Science Foundation of China (No. 61434001) and the ‘Thousands Talents’ Program for Pioneer Researchers and Its Innovation Team, China.

Low-Dimensional Nanomaterials and Molecular Dielectrics for Radiation-Hard Electronics

NASA Astrophysics Data System (ADS)

McMorrow, Julian

The electronic materials research driving Moore's law has provided several decades of increasingly powerful yet simultaneously miniaturized computer technologies. As we approach the physical and practical limits of what can be accomplished with silicon electronics, we look to new materials to drive innovation in future electronic applications. New materials paradigms require the development of understanding from first principles to the demonstration of applications that comes with mature technologies. Semiconducting single-walled carbon nanotubes (SWCNTs), single- and few-layer molybdenum disulfide (MoS2) and self-assembled nanodielectric (SAND) gate materials have all made significant impacts in the research field of unconventional electronic materials. The materials selection, interfaces between materials, processing steps to assemble them, and their interaction with their environment all have significant bearing on the operation of the overall device. Operating in harsh radiation environments, like those of satellites orbiting the Earth, present unique challenges to the functionality and reliability of electronic devices. Because the future of space-bound electronics is often informed by the technology of terrestrial devices, a proactive approach is adopted to identify and understand the radiation response of new materials systems as they emerge and develop. The work discussed here drives the innovation and development of multiple nanomaterial based electronic technologies while simultaneously exploring their relevant radiation response mechanisms. First, collaborative efforts result in the demonstration of a SWCNT-based circuit technology that is solution processed, large-area, and compatible with flexible substrates. The statistical characterization of SWCNT transistors enables the development of robust doping and encapsulation schemes, which make the SWCNT circuits stable, scalable, and low-power. These SWCNTs are then integrated into static random access memory (SRAM) cells, an accomplishment that illustrates the technological relevance of this work by implementing a highly utilized component of modern day computing. Next, these SRAM devices demonstrate functionality as true random number generators (TRNGs), which are critical components in cryptography and encryption. The randomness of these SWCNT TRNGs is verified by a suite of statistical tests. This achievement has implications for securing data and communication in future solution-processed, large-area, flexible electronics. The unprecedented integration achieved by the underlying SWCNT doping and encapsulation motivates the study of this technology in a radiation environment. Doing so results in an understanding of the fundamental charge trapping mechanisms responsible for the radiation response in this system. The integrated nature of these devices enables, for the first time, the observation of system-level effects in a SWCNT integrated circuit technology. This technology is found to be total ionizing dose-hard, a promising result for the adoption of SWCNTs in future space-bound applications. Compared to SWCNTs, the field of MoS2 electronics is relatively nascent. As a result, studies of radiation effects in MoS2 devices focus on the fundamental mechanisms at play in the materials system. Here, we reveal the critical role of atmospheric adsorbates in the radiation effects of MoS2 transistors by measuring their response to vacuum ultraviolet radiation. These results highlight the importance of controlling the atmosphere of MoS2 devices during irradiation. Furthermore, we make recommendations for radiation-hard MoS2-based devices in the future as the technology continues to mature. One such recommendation is the incorporation of specialized dielectrics with proven radiation hardness. To this end, we address the materials integration challenge of incorporating SAND gate dielectrics on arbitrary substrates. We explore a novel approach for preparing metal substrates for SAND deposition, supporting the SAND superlattice structure and its superlative electronic properties on a metal surface. This result is critical for conducting fundamental transport studies when integrating SAND with novel semiconductor materials, as well as enabling complex circuit integration and SAND on flexible substrates. Altogether, these works drive the integration of novel nanoelectronic materials for future electronics while providing an understanding of their varying radiation response mechanisms to enable their adoption in future space-bound applications.

Identification of Microbial Communities in Open and Closed Circuit Bioelectrochemical MBRs by High-Throughput 454 Pyrosequencing

PubMed Central

Huang, Jian; Wang, Zhiwei; Zhu, Chaowei; Ma, Jinxing; Zhang, Xingran; Wu, Zhichao

2014-01-01

Two bioelectrochemical membrane bioreactors (MBRs) developed by integrating microbial fuel cell and MBR technology were operated under closed-circuit and open-circuit modes, and high-throughput 454 pyrosequencing was used to investigate the effects of the power generation on the microbial community of bio-anode and bio-cathode. Microbes on the anode under open-circuit operation (AO) were enriched and highly diverse when compared to those on the anode under closed-circuit operation (AC). However, among the cathodes the closed-circuit mode (CC) had richer and more diverse microbial community compared to the cathode under open-circuit mode (CO). On the anodes AO and AC, Proteobacteria and Bacteroidetes were the dominant phyla, while Firmicutes was enriched only on AC. Deltaproteobacteria affiliated to Proteobacteria were also more abundant on AC than AO. Furthermore, the relative abundance of Desulfuromonas, which are well-known electrogenic bacteria, were much higher on AC (10.2%) when compared to AO (0.11%), indicating that closed-circuit operation was more conducive for the growth of electrogenic bacteria on the anodes. On the cathodes, Protebacteria was robust on CC while Bacteroidetes was more abundant on CO. Rhodobacter and Hydrogenophaga were also enriched on CC than CO, suggesting that these genera play a role in electron transfer from the cathode surface to the terminal electron acceptors in the bioelectrochemical MBR under closed-circuit operation. PMID:24705450

SEM probe of IC radiation sensitivity

NASA Technical Reports Server (NTRS)

Gauthier, M. K.; Stanley, A. G.

1979-01-01

Scanning Electron Microscope (SEM) used to irradiate single integrated circuit (IC) subcomponent to test for radiation sensitivity can localize area of IC less than .03 by .03 mm for determination of exact location of radiation sensitive section.

Physics Notes.

ERIC Educational Resources Information Center

School Science Review, 1982

1982-01-01

Outlines methodology, demonstrations, and materials including: an inexpensive wave machine; speed of sound in carbon dioxide; diffraction grating method for measuring spectral line wavelength; linear electronic thermometer; analogy for bromine diffusion; direct reading refractice index meter; inexpensive integrated circuit spectrophotometer; and…

Self-similar and fractal design for stretchable electronics

DOEpatents

Rogers, John A.; Fan, Jonathan; Yeo, Woon-Hong; Su, Yewang; Huang, Yonggang; Zhang, Yihui

2017-04-04

The present invention provides electronic circuits, devices and device components including one or more stretchable components, such as stretchable electrical interconnects, electrodes and/or semiconductor components. Stretchability of some of the present systems is achieved via a materials level integration of stretchable metallic or semiconducting structures with soft, elastomeric materials in a configuration allowing for elastic deformations to occur in a repeatable and well-defined way. The stretchable device geometries and hard-soft materials integration approaches of the invention provide a combination of advance electronic function and compliant mechanics supporting a broad range of device applications including sensing, actuation, power storage and communications.

Stitching Codeable Circuits: High School Students' Learning about Circuitry and Coding with Electronic Textiles

ERIC Educational Resources Information Center

Litts, Breanne K.; Kafai, Yasmin B.; Lui, Debora A.; Walker, Justice T.; Widman, Sari A.

2017-01-01

Learning about circuitry by connecting a battery, light bulb, and wires is a common activity in many science classrooms. In this paper, we expand students' learning about circuitry with electronic textiles, which use conductive thread instead of wires and sewable LEDs instead of lightbulbs, by integrating programming sensor inputs and light…

Molecular Electronic Shift Registers

NASA Technical Reports Server (NTRS)

Beratan, David N.; Onuchic, Jose N.

1990-01-01

Molecular-scale shift registers eventually constructed as parts of high-density integrated memory circuits. In principle, variety of organic molecules makes possible large number of different configurations and modes of operation for such shift-register devices. Several classes of devices and implementations in some specific types of molecules proposed. All based on transfer of electrons or holes along chains of repeating molecular units.

Electronic Components, Transducers, and Basic Circuits. A Study Guide of the Science and Engineering Technician Curriculum.

ERIC Educational Resources Information Center

Mowery, Donald R.

This study guide is part of a program of studies entitled the Science and Engineering Technician (SET) Curriculum developed for the purpose of training technicians in the use of electronic instruments and their applications. The program integrates elements from the disciplines of chemistry, physics, mathematics, mechanical technology, and…

Front and backside processed thin film electronic devices

DOEpatents

Yuan, Hao-Chih; Wang, Guogong; Eriksson, Mark A.; Evans, Paul G.; Lagally, Max G.; Ma, Zhenqiang

2010-10-12

This invention provides methods for fabricating thin film electronic devices with both front- and backside processing capabilities. Using these methods, high temperature processing steps may be carried out during both frontside and backside processing. The methods are well-suited for fabricating back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

Cryogenic applications of commercial electronic components

NASA Astrophysics Data System (ADS)

Buchanan, Ernest D.; Benford, Dominic J.; Forgione, Joshua B.; Harvey Moseley, S.; Wollack, Edward J.

2012-10-01

We have developed a range of techniques useful for constructing analog and digital circuits for operation in a liquid Helium environment (4.2 K), using commercially available low power components. The challenges encountered in designing cryogenic electronics include finding components that can function usefully in the cold and possess low enough power dissipation so as not to heat the systems they are designed to measure. From design, test, and integration perspectives it is useful for components to operate similarly at room and cryogenic temperatures; however this is not a necessity. Some of the circuits presented here have been used successfully in the MUSTANG [1] and in the GISMO [2] camera to build a complete digital to analog multiplexer (which will be referred to as the Cryogenic Address Driver board). Many of the circuit elements described are of a more general nature rather than specific to the Cryogenic Address Driver board, and were studied as a part of a more comprehensive approach to addressing a larger set of cryogenic electronic needs.

Cryogenic Applications of Commercial Electronic Components

NASA Technical Reports Server (NTRS)

Buchanan, Ernest D.; Benford, Dominic J.; Forgione, Joshua B.; Moseley, S. Harvey; Wollack, Edward J.

2012-01-01

We have developed a range of techniques useful for constructing analog and digital circuits for operation in a liquid Helium environment (4.2K), using commercially available low power components. The challenges encountered in designing cryogenic electronics include finding components that can function usefully in the cold and possess low enough power dissipation so as not to heat the systems they are designed to measure. From design, test, and integration perspectives it is useful for components to operate similarly at room and cryogenic temperatures; however this is not a necessity. Some of the circuits presented here have been used successfully in the MUSTANG and in the GISMO camera to build a complete digital to analog multiplexer (which will be referred to as the Cryogenic Address Driver board). Many of the circuit elements described are of a more general nature rather than specific to the Cryogenic Address Driver board, and were studied as a part of a more comprehensive approach to addressing a larger set of cryogenic electronic needs.

Free-Standing Organic Transistors and Circuits with Sub-Micron Thicknesses

PubMed Central

Fukuda, Kenjiro; Sekine, Tomohito; Shiwaku, Rei; Morimoto, Takuya; Kumaki, Daisuke; Tokito, Shizuo

2016-01-01

The realization of wearable electronic devices with extremely thin and flexible form factors has been a major technological challenge. While substrates typically limit the thickness of thin-film electronic devices, they are usually necessary for their fabrication and functionality. Here we report on ultra-thin organic transistors and integrated circuits using device components whose substrates that have been removed. The fabricated organic circuits with total device thicknesses down to 350 nm have electrical performance levels close to those fabricated on conventional flexible substrates. Moreover, they exhibit excellent mechanical robustness, whereby their static and dynamic electrical characteristics do not change even under 50% compressive strain. Tests using systematically applied compressive strains reveal that these free-standing organic transistors possess anisotropic mechanical stability, and a strain model for a multilayer stack can be used to describe the strain in this sort of ultra-thin device. These results show the feasibility of ultimate-thin organic electronic devices using free-standing constructions. PMID:27278828

MEMS Technology for Space Applications

NASA Technical Reports Server (NTRS)

vandenBerg, A.; Spiering, V. L.; Lammerink, T. S. J.; Elwenspoek, M.; Bergveld, P.

1995-01-01

Micro-technology enables the manufacturing of all kinds of components for miniature systems or micro-systems, such as sensors, pumps, valves, and channels. The integration of these components into a micro-electro-mechanical system (MEMS) drastically decreases the total system volume and mass. These properties, combined with the increasing need for monitoring and control of small flows in (bio)chemical experiments, makes MEMS attractive for space applications. The level of integration and applied technology depends on the product demands and the market. The ultimate integration is process integration, which results in a one-chip system. An example of process integration is a dosing system of pump, flow sensor, micromixer, and hybrid feedback electronics to regulate the flow. However, for many applications, a hybrid integration of components is sufficient and offers the advantages of design flexibility and even the exchange of components in the case of a modular set up. Currently, we are working on hybrid integration of all kinds of sensors (physical and chemical) and flow system modules towards a modular system; the micro total analysis system (micro TAS). The substrate contains electrical connections as in a printed circuit board (PCB) as well as fluid channels for a circuit channel board (CCB) which, when integrated, form a mixed circuit board (MCB).

Total-dose radiation effects data for semiconductor devices, volume 2

NASA Technical Reports Server (NTRS)

Price, W. E.; Martin, K. E.; Nichols, D. K.; Gauthier, M. K.; Brown, S. F.

1981-01-01

Total ionizing dose radiation test data on integrated circuits are analyzed. Tests were performed with the electron accelerator (Dynamitron) that provides a steady state 2.5 MeV electron beam. Some radiation exposures were made with a Cobalt-60 gamma ray source. The results obtained with the Cobalt-60 source are considered an approximate measure of the radiation damage that would be incurred by an equivalent dose of electrons.

Electronics design of the airborne stabilized platform attitude acquisition module

NASA Astrophysics Data System (ADS)

Xu, Jiang; Wei, Guiling; Cheng, Yong; Li, Baolin; Bu, Hongyi; Wang, Hao; Zhang, Zhanwei; Li, Xingni

2014-02-01

We present an attitude acquisition module electronics design for the airborne stabilized platform. The design scheme, which is based on Integrated MEMS sensor ADIS16405, develops the attitude information processing algorithms and the hardware circuit. The hardware circuits with a small volume of only 44.9 x 43.6 x 24.6 mm3, has the characteristics of lightweight, modularization and digitalization. The interface design of the PC software uses the combination plane chart with track line to receive the attitude information and display. Attitude calculation uses the Kalman filtering algorithm to improve the measurement accuracy of the module in the dynamic environment.

Gravitational Influences on the Growth of Polydiacetylene Films by Ultraviolet Solution Polymerization

NASA Technical Reports Server (NTRS)

Frazier, Donald O.

2000-01-01

Technically, the field of integrated optics using organic/polymer materials as a new means of information processing, has emerged as of vital importance to optical computers, optical switching, optical communications, the defense industry, etc. The goal is to replace conventional electronic integrated circuits and wires by equivalent miniaturized optical integrated circuits and fibers, offering larger bandwidths, more compactness and reliability, immunity to electromagnetic interference and less cost. From the Code E perspective, this research area represents an opportunity to marry "front-line" education in science and technology with national scientific and technological interests while maximizing human resources utilization. This can be achieved by the development of untapped resources for scientific research - such as minorities, women, and universities traditionally uninvolved in scientific research.

Materials and processing approaches for foundry-compatible transient electronics

PubMed Central

Chang, Jan-Kai; Fang, Hui; Bower, Christopher A.; Song, Enming; Yu, Xinge; Rogers, John A.

2017-01-01

Foundry-based routes to transient silicon electronic devices have the potential to serve as the manufacturing basis for “green” electronic devices, biodegradable implants, hardware secure data storage systems, and unrecoverable remote devices. This article introduces materials and processing approaches that enable state-of-the-art silicon complementary metal-oxide-semiconductor (CMOS) foundries to be leveraged for high-performance, water-soluble forms of electronics. The key elements are (i) collections of biodegradable electronic materials (e.g., silicon, tungsten, silicon nitride, silicon dioxide) and device architectures that are compatible with manufacturing procedures currently used in the integrated circuit industry, (ii) release schemes and transfer printing methods for integration of multiple ultrathin components formed in this way onto biodegradable polymer substrates, and (iii) planarization and metallization techniques to yield interconnected and fully functional systems. Various CMOS devices and circuit elements created in this fashion and detailed measurements of their electrical characteristics highlight the capabilities. Accelerated dissolution studies in aqueous environments reveal the chemical kinetics associated with the underlying transient behaviors. The results demonstrate the technical feasibility for using foundry-based routes to sophisticated forms of transient electronic devices, with functional capabilities and cost structures that could support diverse applications in the biomedical, military, industrial, and consumer industries. PMID:28652373

In vivo polymerization and manufacturing of wires and supercapacitors in plants

PubMed Central

Stavrinidou, Eleni; Nilsson, K. Peter R.; Singh, Sandeep Kumar; Franco-Gonzalez, Juan Felipe; Volkov, Anton V.; Jonsson, Magnus P.; Grimoldi, Andrea; Elgland, Mathias; Zozoulenko, Igor V.; Berggren, Magnus

2017-01-01

Electronic plants, e-Plants, are an organic bioelectronic platform that allows electronic interfacing with plants. Recently we have demonstrated plants with augmented electronic functionality. Using the vascular system and organs of a plant, we manufactured organic electronic devices and circuits in vivo, leveraging the internal structure and physiology of the plant as the template, and an integral part of the devices. However, this electronic functionality was only achieved in localized regions, whereas new electronic materials that could be distributed to every part of the plant would provide versatility in device and circuit fabrication and create possibilities for new device concepts. Here we report the synthesis of such a conjugated oligomer that can be distributed and form longer oligomers and polymer in every part of the xylem vascular tissue of a Rosa floribunda cutting, forming long-range conducting wires. The plant’s structure acts as a physical template, whereas the plant’s biochemical response mechanism acts as the catalyst for polymerization. In addition, the oligomer can cross through the veins and enter the apoplastic space in the leaves. Finally, using the plant’s natural architecture we manufacture supercapacitors along the stem. Our results are preludes to autonomous energy systems integrated within plants and distribute interconnected sensor–actuator systems for plant control and optimization. PMID:28242683

In vivo polymerization and manufacturing of wires and supercapacitors in plants.

PubMed

Stavrinidou, Eleni; Gabrielsson, Roger; Nilsson, K Peter R; Singh, Sandeep Kumar; Franco-Gonzalez, Juan Felipe; Volkov, Anton V; Jonsson, Magnus P; Grimoldi, Andrea; Elgland, Mathias; Zozoulenko, Igor V; Simon, Daniel T; Berggren, Magnus

2017-03-14

Electronic plants, e -Plants, are an organic bioelectronic platform that allows electronic interfacing with plants. Recently we have demonstrated plants with augmented electronic functionality. Using the vascular system and organs of a plant, we manufactured organic electronic devices and circuits in vivo, leveraging the internal structure and physiology of the plant as the template, and an integral part of the devices. However, this electronic functionality was only achieved in localized regions, whereas new electronic materials that could be distributed to every part of the plant would provide versatility in device and circuit fabrication and create possibilities for new device concepts. Here we report the synthesis of such a conjugated oligomer that can be distributed and form longer oligomers and polymer in every part of the xylem vascular tissue of a Rosa floribunda cutting, forming long-range conducting wires. The plant's structure acts as a physical template, whereas the plant's biochemical response mechanism acts as the catalyst for polymerization. In addition, the oligomer can cross through the veins and enter the apoplastic space in the leaves. Finally, using the plant's natural architecture we manufacture supercapacitors along the stem. Our results are preludes to autonomous energy systems integrated within plants and distribute interconnected sensor-actuator systems for plant control and optimization.

Infrared readout electronics; Proceedings of the Meeting, Orlando, FL, Apr. 21, 22, 1992

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Editor)

1992-01-01

The present volume on IR readout electronics discusses cryogenic readout using silicon devices, cryogenic readout using III-V and LTS devices, multiplexers for higher temperatures, and focal-plane signal processing electronics. Attention is given to the optimization of cryogenic CMOS processes for sub-10-K applications, cryogenic measurements of aerojet GaAs n-JFETs, inP-based heterostructure device technology for ultracold readout applications, and a three-terminal semiconductor-superconductor transimpedance amplifier. Topics addressed include unfulfilled needs in IR astronomy focal-plane readout electronics, IR readout integrated circuit technology for tactical missile systems, and radiation-hardened 10-bit A/D for FPA signal processing. Also discussed are the implementation of a noise reduction circuit for spaceflight IR spectrometers, a real-time processor for staring receivers, and a fiber-optic link design for INMOS transputers.

Optical Computers and Space Technology

NASA Technical Reports Server (NTRS)

Abdeldayem, Hossin A.; Frazier, Donald O.; Penn, Benjamin; Paley, Mark S.; Witherow, William K.; Banks, Curtis; Hicks, Rosilen; Shields, Angela

1995-01-01

The rapidly increasing demand for greater speed and efficiency on the information superhighway requires significant improvements over conventional electronic logic circuits. Optical interconnections and optical integrated circuits are strong candidates to provide the way out of the extreme limitations imposed on the growth of speed and complexity of nowadays computations by the conventional electronic logic circuits. The new optical technology has increased the demand for high quality optical materials. NASA's recent involvement in processing optical materials in space has demonstrated that a new and unique class of high quality optical materials are processible in a microgravity environment. Microgravity processing can induce improved orders in these materials and could have a significant impact on the development of optical computers. We will discuss NASA's role in processing these materials and report on some of the associated nonlinear optical properties which are quite useful for optical computers technology.

Integrated Cryogenic Electronics Testbed (ICE-T) for Evaluation of Superconductor and Cryo-Semiconductor Integrated Circuits

NASA Astrophysics Data System (ADS)

Dotsenko, V. V.; Sahu, A.; Chonigman, B.; Tang, J.; Lehmann, A. E.; Gupta, V.; Talalevskii, A.; Ruotolo, S.; Sarwana, S.; Webber, R. J.; Gupta, D.

2017-02-01

Research and development of cryogenic application-specific integrated circuits (ASICs), such as high-frequency (tens of GHz) semiconductor and superconductor mixed-signal circuits and large-scale (>10,000 Josephson Junctions) superconductor digital circuits, have long been hindered by the absence of specialized cryogenic test apparatus. During their iterative development phase, most ASICs require many additional input-output lines for applying independent bias controls, injecting test signals, and monitoring outputs of different sub-circuits. We are developing a full suite of modular test apparatus based on cryocoolers that do not consume liquid helium, and support extensive electrical interfaces to standard and custom test equipment. Our design separates the cryogenics from electrical connections, allowing even inexperienced users to conduct testing by simply mounting their ASIC on a removable electrical insert. Thermal connections between the cold stages and the inserts are made with robust thermal links. ICE-T accommodates two independent electrical inserts at the same time. We have designed various inserts, such as universal ones with all 40 or 80 coaxial cables and those with customized wiring and temperature-controlled stages. ICE-T features fast thermal cycling for rapid testing, enables detailed testing over long periods (days to months, if necessary), and even supports automated testing of digital ICs with modular additions.

Medium scale carbon nanotube thin film integrated circuits on flexible plastic substrates

DOEpatents

Rogers, John A; Cao, Qing; Alam, Muhammad; Pimparkar, Ninad

2015-02-03

The present invention provides device components geometries and fabrication strategies for enhancing the electronic performance of electronic devices based on thin films of randomly oriented or partially aligned semiconducting nanotubes. In certain aspects, devices and methods of the present invention incorporate a patterned layer of randomly oriented or partially aligned carbon nanotubes, such as one or more interconnected SWNT networks, providing a semiconductor channel exhibiting improved electronic properties relative to conventional nanotubes-based electronic systems.

Design and Fabrication of an Implantable Cortical Semiconductor Integrated Circuit Electrode Array

DTIC Science & Technology

1990-12-01

25 Array Pads....................25 Polyimide ....................26 III. METHODOLOGY.........................27 Brain Chip Electronics...38 Ionic Permeation. .................. 38 Polyimide . ................... 38 Implantation. .................... 39 Wire Bonding...53 Pad Sensitivity ................. 53 Ionic Permeat:.on. .................. 54 Polyimide . ................... 54 Implantation

Unfolding an electronic integrate-and-fire circuit.

PubMed

Carrillo, Humberto; Hoppensteadt, Frank

2010-01-01

Many physical and biological phenomena involve accumulation and discharge processes that can occur on significantly different time scales. Models of these processes have contributed to understand excitability self-sustained oscillations and synchronization in arrays of oscillators. Integrate-and-fire (I+F) models are popular minimal fill-and-flush mathematical models. They are used in neuroscience to study spiking and phase locking in single neuron membranes, large scale neural networks, and in a variety of applications in physics and electrical engineering. We show here how the classical first-order I+F model fits into the theory of nonlinear oscillators of van der Pol type by demonstrating that a particular second-order oscillator having small parameters converges in a singular perturbation limit to the I+F model. In this sense, our study provides a novel unfolding of such models and it identifies a constructible electronic circuit that is closely related to I+F.

Heat capacity mapping radiometer for AEM spacecraft

NASA Technical Reports Server (NTRS)

Sonnek, G. E.

1977-01-01

The operation, maintenance, and integration of the applications explorer mission heat capacity mapping radiometer is illustrated in block diagrams and detail schematics of circuit functions. Data format and logic timing diagrams are included along with radiometric and electronic calibration data. Mechanical and electrical configuration is presented to provide interface details for integration of the HCMR instrument to AEM spacecraft.

High efficiency 4H-SiC betavoltaic power sources using tritium radioisotopes

NASA Astrophysics Data System (ADS)

Thomas, Christopher; Portnoff, Samuel; Spencer, M. G.

2016-01-01

Realization of an 18.6% efficient 4H-silicon carbide (4H-SiC) large area betavoltaic power source using the radioisotope tritium is reported. A 200 nm 4H-SiC P+N junction is used to collect high-energy electrons. The electron source is a titanium tritide (TiH3x) foil, or an integrated titanium tritide region formed by the diffusion of tritium into titanium. The specific activity of the source is directly measured. Dark current measured under short circuit conditions was less than 6.1 pA/cm2. Samples measured with an external tritium foil produced an open circuit voltage of 2.09 V, short circuit current of 75.47 nA/cm2, fill factor of 0.86, and power efficiency of 18.6%. Samples measured with an integrated source produced power efficiencies of 12%. Simulations were done to determine the beta spectrum (modified by self absorption) exiting the source and the electron hole pair generation function in the 4H-SiC. The electron-hole pair generation function in 4H-SiC was modeled as a Gaussian distribution, and a closed form solution of the continuity equation was used to analyze the cell performance. The effective surface recombination velocity in our samples was found to be 105-106 cm/s. Our analysis demonstrated that the surface recombination dominates the performance of a tritium betavoltaic device but that using a thin P+N junction structure can mitigate some of the negative effects.

Extremely high frequency RF effects on electronics.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Loubriel, Guillermo Manuel; Vigliano, David; Coleman, Phillip Dale

The objective of this work was to understand the fundamental physics of extremely high frequency RF effects on electronics. To accomplish this objective, we produced models, conducted simulations, and performed measurements to identify the mechanisms of effects as frequency increases into the millimeter-wave regime. Our purpose was to answer the questions, 'What are the tradeoffs between coupling, transmission losses, and device responses as frequency increases?', and, 'How high in frequency do effects on electronic systems continue to occur?' Using full wave electromagnetics codes and a transmission-line/circuit code, we investigated how extremely high-frequency RF propagates on wires and printed circuit boardmore » traces. We investigated both field-to-wire coupling and direct illumination of printed circuit boards to determine the significant mechanisms for inducing currents at device terminals. We measured coupling to wires and attenuation along wires for comparison to the simulations, looking at plane-wave coupling as it launches modes onto single and multiconductor structures. We simulated the response of discrete and integrated circuit semiconductor devices to those high-frequency currents and voltages, using SGFramework, the open-source General-purpose Semiconductor Simulator (gss), and Sandia's Charon semiconductor device physics codes. This report documents our findings.« less

Photonic technology revolution influence on the defence area

NASA Astrophysics Data System (ADS)

Galas, Jacek; Litwin, Dariusz; Błocki, Narcyz; Daszkiewicz, Marek

2017-10-01

Revolutionary progress in the photonic technology provides the ability to develop military systems of new properties not possible to obtain with the use of classical technologies. In recent years, this progress has resulted in developing advanced, complex, multifunctional and relatively cheap Photonic Integrated Circuits (PIC) or Hybrid Photonics Circuits (HPC) built of a collection of standardized optical, optoelectronic and photonic components. This idea is similar to the technology of Electronic Integrated Circuits, which has revolutionized the microelectronic market. The novel approach to photonic technology is now revolutionizing the photonics' market. It simplifies the photonics technology and enables creation of technological centers for designing, development and production of advanced optical and photonic systems in the EU and other countries. This paper presents some selected photonic technologies and their impact on such defense systems like radars, radiolocation, telecommunication, and radio-communication systems.

A family of neuromuscular stimulators with optical transcutaneous control.

PubMed

Jarvis, J C; Salmons, S

1991-01-01

A family of miniature implantable neuromuscular stimulators has been developed using surface-mounted Philips 4000-series integrated circuits. The electronic components are mounted by hand on printed circuits (platinum/gold on alumina) and the electrical connections are made by reflow soldering. The plastic integrated-circuit packages, ceramic resistors and metal interconnections are protected from the body fluids by a coating of biocompatible silicone rubber. This simple technology provides reliable function for at least 4 months under implanted conditions. The circuits have in common a single lithium cell power-supply (3.2 V) and an optical sensor which can be used to detect light flashes through the skin after the device has been implanted. This information channel may be used to switch the output of a device on or off, or to cycle through a series of pre-set programs. The devices are currently finding application in studies which provide an experimental basis for the clinical exploitation of electrically stimulated skeletal muscle in cardiac assistance, sphincter reconstruction or functional electrical stimulation of paralysed limbs.

Development of a unit cell for a Ge:Ga detector array

NASA Technical Reports Server (NTRS)

1988-01-01

Two modules of gallium-doped germanium (Ge:Ga) infrared detectors with integrated multiplexing readouts and supporting drive electronics were designed and tested. This development investigated the feasibility of producing two-dimensional Ge:Ga arrays by stacking linear modules in a housing capable of providing uniaxial stress for enhanced long-wavelength response. Each module includes 8 detectors (1x1x2 mm) mounted to a sapphire board. The element spacing is 12 microns. The back faces of the detector elements are beveled with an 18 deg angle, which was proved to significantly enhance optical absorption. Each module includes a different silicon metal-oxide semiconductor field effect transistor (MOSFET) readout. The first circuit was built from discrete MOSFET components; the second incorporated devices taken from low-temperature integrated circuit multiplexers. The latter circuit exhibited much lower stray capacitance and improved stability. Using these switched-FET circuits, it was demonstrated that burst readout, with multiplexer active only during the readout period, could successfully be implemented at approximately 3.5 K.

Propulsion controls

NASA Technical Reports Server (NTRS)

Harkney, R. D.

1980-01-01

Increased system requirements and functional integration with the aircraft have placed an increased demand on control system capability and reliability. To provide these at an affordable cost and weight and because of the rapid advances in electronic technology, hydromechanical systems are being phased out in favor of digital electronic systems. The transition is expected to be orderly from electronic trimming of hydromechanical controls to full authority digital electronic control. Future propulsion system controls will be highly reliable full authority digital electronic with selected component and circuit redundancy to provide the required safety and reliability. Redundancy may include a complete backup control of a different technology for single engine applications. The propulsion control will be required to communicate rapidly with the various flight and fire control avionics as part of an integrated control concept.

Microcomputer control of an electronically commutated dc motor

NASA Astrophysics Data System (ADS)

El-Sharkawi, M. A.; Coleman, J. S.; Mehdi, I. S.; Sommer, D. L.

A microcomputer control system for an electronically commutated dc motor (ECM) has been designed, built and tested. A 3-hp, 270-volt, samarium-cobalt brushless dc motor is controlled by an Intel 8086-based microcomputer. The main functions of the microcomputer are to control the speed of the motor, to provide forward or reverse rotation, to brake, and to protect the motor and its power electronic switching circuits from overcurrents. The necessary interface circuits were designed and built, and the system components have been integrated and tested. It is shown that the proposed ECM system with the microcomputer control operate the motor reliably over a wide range of speeds. The purpose of this effort is to develop the motorcontroller for driving electromechanical actuators for flight control and other aircraft applications.

Closed circuit recovery of copper, lead and iron from electronic waste with citrate solutions.

PubMed

Torres, Robinson; Lapidus, Gretchen T

2017-02-01

An integral closed circuit hydrometallurgical process is presented for base metal recovery from electronic waste. The leaching medium consists of a sodium citrate solution, from which base metals are retrieved by direct electrowinning, and the barren solution is recycled back to the leaching stage. This leaching-electrowinning cycle was repeated four times. The redox properties of the fresh citrate solution, as well as the leach liquors, were characterized by cyclic voltammetry to determine adequate conditions for metal reduction, as well as to limit citrate degradation. The leaching efficiency of electronic waste, employing the same solution after four complete cycles was 71, 83 and 94% for copper, iron and lead, respectively, compared to the original leach with fresh citrate solution. Copyright © 2016 Elsevier Ltd. All rights reserved.

Deep Trek High Temperature Electronics Project

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bruce Ohme

2007-07-31

This report summarizes technical progress achieved during the cooperative research agreement between Honeywell and U.S. Department of Energy to develop high-temperature electronics. Objects of this development included Silicon-on-Insulator (SOI) wafer process development for high temperature, supporting design tools and libraries, and high temperature integrated circuit component development including FPGA, EEPROM, high-resolution A-to-D converter, and a precision amplifier.

Fast, High-Precision Readout Circuit for Detector Arrays

NASA Technical Reports Server (NTRS)

Rider, David M.; Hancock, Bruce R.; Key, Richard W.; Cunningham, Thomas J.; Wrigley, Chris J.; Seshadri, Suresh; Sander, Stanley P.; Blavier, Jean-Francois L.

2013-01-01

The GEO-CAPE mission described in NASA's Earth Science and Applications Decadal Survey requires high spatial, temporal, and spectral resolution measurements to monitor and characterize the rapidly changing chemistry of the troposphere over North and South Americas. High-frame-rate focal plane arrays (FPAs) with many pixels are needed to enable such measurements. A high-throughput digital detector readout integrated circuit (ROIC) that meets the GEO-CAPE FPA needs has been developed, fabricated, and tested. The ROIC is based on an innovative charge integrating, fast, high-precision analog-to-digital circuit that is built into each pixel. The 128×128-pixel ROIC digitizes all 16,384 pixels simultaneously at frame rates up to 16 kHz to provide a completely digital output on a single integrated circuit at an unprecedented rate of 262 million pixels per second. The approach eliminates the need for off focal plane electronics, greatly reducing volume, mass, and power compared to conventional FPA implementations. A focal plane based on this ROIC will require less than 2 W of power on a 1×1-cm integrated circuit. The ROIC is fabricated of silicon using CMOS technology. It is designed to be indium bump bonded to a variety of detector materials including silicon PIN diodes, indium antimonide (InSb), indium gallium arsenide (In- GaAs), and mercury cadmium telluride (HgCdTe) detector arrays to provide coverage over a broad spectral range in the infrared, visible, and ultraviolet spectral ranges.

Quo vadis, unimolecular electronics?

PubMed

Metzger, Robert Melville

2018-06-07

This paper reviews the present status of unimolecular electronics (UME). The field started in the 1970s with a hope that some day organic molecules (∼2 nm in size), when used as electronic components, would challenge Si-based inorganic electronics in ultimate-high-density integrated circuits. The technological push to ever smaller inorganic device sizes (Moore's "law") was driven by a profit motive and by vast investments. UME, the underfunded pauper, may have lost that "race to the bottom", but some excellent science is left to be done.

Heterojunction-Internal-Photoemission Infrared Detectors

NASA Technical Reports Server (NTRS)

Maserjian, Joseph

1991-01-01

New type of photodetector adds options for design of imaging devices. Heterojunction-internal-photoemission (HIP) infrared photodetectors proposed for incorporation into planar arrays in imaging devices required to function well at wavelengths from 8 to 17 micrometers and at temperatures above 65 K. Photoexcited electrons cross energy barrier at heterojunction and swept toward collection layer. Array of such detectors made by etching mesa structures. HIP layers stacked to increase quantum efficiency. Also built into integrated circuits including silicon multiplexer/readout circuits.

Screen printed passive components for flexible power electronics

NASA Astrophysics Data System (ADS)

Ostfeld, Aminy E.; Deckman, Igal; Gaikwad, Abhinav M.; Lochner, Claire M.; Arias, Ana C.

2015-10-01

Additive and low-temperature printing processes enable the integration of diverse electronic devices, both power-supplying and power-consuming, on flexible substrates at low cost. Production of a complete electronic system from these devices, however, often requires power electronics to convert between the various operating voltages of the devices. Passive components—inductors, capacitors, and resistors—perform functions such as filtering, short-term energy storage, and voltage measurement, which are vital in power electronics and many other applications. In this paper, we present screen-printed inductors, capacitors, resistors and an RLC circuit on flexible plastic substrates, and report on the design process for minimization of inductor series resistance that enables their use in power electronics. Printed inductors and resistors are then incorporated into a step-up voltage regulator circuit. Organic light-emitting diodes and a flexible lithium ion battery are fabricated and the voltage regulator is used to power the diodes from the battery, demonstrating the potential of printed passive components to replace conventional surface-mount components in a DC-DC converter application.

Screen printed passive components for flexible power electronics

PubMed Central

Ostfeld, Aminy E.; Deckman, Igal; Gaikwad, Abhinav M.; Lochner, Claire M.; Arias, Ana C.

2015-01-01

Additive and low-temperature printing processes enable the integration of diverse electronic devices, both power-supplying and power-consuming, on flexible substrates at low cost. Production of a complete electronic system from these devices, however, often requires power electronics to convert between the various operating voltages of the devices. Passive components—inductors, capacitors, and resistors—perform functions such as filtering, short-term energy storage, and voltage measurement, which are vital in power electronics and many other applications. In this paper, we present screen-printed inductors, capacitors, resistors and an RLC circuit on flexible plastic substrates, and report on the design process for minimization of inductor series resistance that enables their use in power electronics. Printed inductors and resistors are then incorporated into a step-up voltage regulator circuit. Organic light-emitting diodes and a flexible lithium ion battery are fabricated and the voltage regulator is used to power the diodes from the battery, demonstrating the potential of printed passive components to replace conventional surface-mount components in a DC-DC converter application. PMID:26514331

Materials for Stretchable Electronics - Electronic Eyeballs, Brain Monitors and Other Applications

ScienceCinema

Rogers, John A. [University of Illinois, Urbana Champaign, Illinois, United States

2017-12-09

Electronic circuits that involve transistors and related components on thin plastic sheets or rubber slabs offer mechanical properties (e.g. bendability, stretchability) and other features (e.g. lightweight, rugged construction) which cannot be easily achieved with technologies that use rigid, fragile semiconductor wafer or glass substrates.  Device examples include personal or structural health monitors and electronic eye imagers, in which the electronics must conform to complex curvilinear shapes or flex/stretch during use.  Our recent work accomplishes these technology outcomes by use of single crystal inorganic nanomaterials in ‘wavy’ buckled configurations on elastomeric supports.  This talk will describe key fundamental materials and mechanics aspects of these approaches, as well as engineering features of their use in individual transistors, photodiodes and integrated circuits.  Cardiac and brain monitoring devices provide examples of application in biomedicine; hemispherical electronic eye cameras illustrate new capacities for bio-inspired device design.

Screen printed passive components for flexible power electronics.

PubMed

Ostfeld, Aminy E; Deckman, Igal; Gaikwad, Abhinav M; Lochner, Claire M; Arias, Ana C

2015-10-30

Additive and low-temperature printing processes enable the integration of diverse electronic devices, both power-supplying and power-consuming, on flexible substrates at low cost. Production of a complete electronic system from these devices, however, often requires power electronics to convert between the various operating voltages of the devices. Passive components-inductors, capacitors, and resistors-perform functions such as filtering, short-term energy storage, and voltage measurement, which are vital in power electronics and many other applications. In this paper, we present screen-printed inductors, capacitors, resistors and an RLC circuit on flexible plastic substrates, and report on the design process for minimization of inductor series resistance that enables their use in power electronics. Printed inductors and resistors are then incorporated into a step-up voltage regulator circuit. Organic light-emitting diodes and a flexible lithium ion battery are fabricated and the voltage regulator is used to power the diodes from the battery, demonstrating the potential of printed passive components to replace conventional surface-mount components in a DC-DC converter application.

Coherent control of single electrons: a review of current progress

NASA Astrophysics Data System (ADS)

Bäuerle, Christopher; Glattli, D. Christian; Meunier, Tristan; Portier, Fabien; Roche, Patrice; Roulleau, Preden; Takada, Shintaro; Waintal, Xavier

2018-05-01

In this report we review the present state of the art of the control of propagating quantum states at the single-electron level and its potential application to quantum information processing. We give an overview of the different approaches that have been developed over the last few years in order to gain full control over a propagating single-electron in a solid-state system. After a brief introduction of the basic concepts, we present experiments on flying qubit circuits for ensemble of electrons measured in the low frequency (DC) limit. We then present the basic ingredients necessary to realise such experiments at the single-electron level. This includes a review of the various single-electron sources that have been developed over the last years and which are compatible with integrated single-electron circuits. This is followed by a review of recent key experiments on electron quantum optics with single electrons. Finally we will present recent developments in the new physics that has emerged using ultrashort voltage pulses. We conclude our review with an outlook and future challenges in the field.

Electronic readout system for the Belle II imaging Time-Of-Propagation detector

NASA Astrophysics Data System (ADS)

Kotchetkov, Dmitri

2017-07-01

The imaging Time-Of-Propagation (iTOP) detector, constructed for the Belle II experiment at the SuperKEKB e+e- collider, is an 8192-channel high precision Cherenkov particle identification detector with timing resolution below 50 ps. To acquire data from the iTOP, a novel front-end electronic readout system was designed, built, and integrated. Switched-capacitor array application-specific integrated circuits are used to sample analog signals. Triggering, digitization, readout, and data transfer are controlled by Xilinx Zynq-7000 system on a chip devices.

Design challenges and methodology for developing new integrated circuits for the robotics exploration of the solar system

NASA Technical Reports Server (NTRS)

Mojarradi, Mohammad M.; Kolawa, Elizabeth; Blalock, Benjamin; Johnson, R. Wayne

2005-01-01

Next generation space-based robotics systems will be constructed using distributed architectures where electronics capable of working in the extreme environments of the planets of the solar system are integrated with the sensors and actuators in plug-and-play modules and are connected through common multiple redundant data and power buses.

Spike timing precision of neuronal circuits.

PubMed

Kilinc, Deniz; Demir, Alper

2018-06-01

Spike timing is believed to be a key factor in sensory information encoding and computations performed by the neurons and neuronal circuits. However, the considerable noise and variability, arising from the inherently stochastic mechanisms that exist in the neurons and the synapses, degrade spike timing precision. Computational modeling can help decipher the mechanisms utilized by the neuronal circuits in order to regulate timing precision. In this paper, we utilize semi-analytical techniques, which were adapted from previously developed methods for electronic circuits, for the stochastic characterization of neuronal circuits. These techniques, which are orders of magnitude faster than traditional Monte Carlo type simulations, can be used to directly compute the spike timing jitter variance, power spectral densities, correlation functions, and other stochastic characterizations of neuronal circuit operation. We consider three distinct neuronal circuit motifs: Feedback inhibition, synaptic integration, and synaptic coupling. First, we show that both the spike timing precision and the energy efficiency of a spiking neuron are improved with feedback inhibition. We unveil the underlying mechanism through which this is achieved. Then, we demonstrate that a neuron can improve on the timing precision of its synaptic inputs, coming from multiple sources, via synaptic integration: The phase of the output spikes of the integrator neuron has the same variance as that of the sample average of the phases of its inputs. Finally, we reveal that weak synaptic coupling among neurons, in a fully connected network, enables them to behave like a single neuron with a larger membrane area, resulting in an improvement in the timing precision through cooperation.

Radio frequency analog electronics based on carbon nanotube transistors

PubMed Central

Kocabas, Coskun; Kim, Hoon-sik; Banks, Tony; Rogers, John A.; Pesetski, Aaron A.; Baumgardner, James E.; Krishnaswamy, S. V.; Zhang, Hong

2008-01-01

The potential to exploit single-walled carbon nanotubes (SWNTs) in advanced electronics represents a continuing, major source of interest in these materials. However, scalable integration of SWNTs into circuits is challenging because of difficulties in controlling the geometries, spatial positions, and electronic properties of individual tubes. We have implemented solutions to some of these challenges to yield radio frequency (RF) SWNT analog electronic devices, such as narrow band amplifiers operating in the VHF frequency band with power gains as high as 14 dB. As a demonstration, we fabricated nanotube transistor radios, in which SWNT devices provide all of the key functions, including resonant antennas, fixed RF amplifiers, RF mixers, and audio amplifiers. These results represent important first steps to practical implementation of SWNTs in high-speed analog circuits. Comparison studies indicate certain performance advantages over silicon and capabilities that complement those in existing compound semiconductor technologies. PMID:18227509

Student use of model-based reasoning when troubleshooting an electronic circuit

NASA Astrophysics Data System (ADS)

Lewandowski, Heather; Stetzer, Mackenzie; van de Bogart, Kevin; Dounas-Frazer, Dimitri

2016-03-01

Troubleshooting systems is an integral part of experimental physics in both research and educational settings. Accordingly, ability to troubleshoot is an important learning goal for undergraduate physics lab courses. We investigate students' model-based reasoning on a troubleshooting task using data collected in think-aloud interviews during which pairs of students from two institutions attempted to diagnose and repair a malfunctioning circuit. Our analysis scheme was informed by the Experimental Modeling Framework, which describes physicists' use of mathematical and conceptual models when reasoning about experimental systems. We show that system and subsystem models were crucial for the evaluation of repairs to the circuit and played an important role in some troubleshooting strategies. Finally, drawing on data from interviews with electronics instructors from a broad range of institution types, we outline recommendations for model-based approaches to teaching and learning troubleshooting skills.

High-resolution inkjet printing of all-polymer transistor circuits.

PubMed

Sirringhaus, H; Kawase, T; Friend, R H; Shimoda, T; Inbasekaran, M; Wu, W; Woo, E P

2000-12-15

Direct printing of functional electronic materials may provide a new route to low-cost fabrication of integrated circuits. However, to be useful it must allow continuous manufacturing of all circuit components by successive solution deposition and printing steps in the same environment. We demonstrate direct inkjet printing of complete transistor circuits, including via-hole interconnections based on solution-processed polymer conductors, insulators, and self-organizing semiconductors. We show that the use of substrate surface energy patterning to direct the flow of water-based conducting polymer inkjet droplets enables high-resolution definition of practical channel lengths of 5 micrometers. High mobilities of 0.02 square centimeters per volt second and on-off current switching ratios of 10(5) were achieved.

Final Technical Report - 300°C Capable Electronics Platform and Temperature Sensor System For Enhanced Geothermal Systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Cheng-Po; Shaddock, David; Sandvik, Peter

2012-11-30

A silicon carbide (SiC) based electronic temperature sensor prototype has been demonstrated to operate at 300°C. We showed continuous operation of 1,000 hours with SiC operational amplifier and surface mounted discreet resistors and capacitors on a ceramic circuit board. This feasibility demonstration is a major milestone in the development of high temperature electronics in general and high temperature geothermal exploration and well management tools in particular. SiC technology offers technical advantages that are not found in competing technologies such as silicon-on-insulator (SOI) at high temperatures of 200°C to 300°C and beyond. The SiC integrated circuits and packaging methods can bemore » used in new product introduction by GE Oil and Gas for high temperature down-hole tools. The existing SiC fabrication facility at GE is sufficient to support the quantities currently demanded by the marketplace, and there are other entities in the United States and other countries capable of ramping up SiC technology manufacturing. The ceramic circuit boards are different from traditional organic-based electronics circuit boards, but the fabrication process is compatible with existing ceramic substrate manufacturing. This project has brought high temperature electronics forward, and brings us closer to commercializing tools that will enable and reduce the cost of enhanced geothermal technology to benefit the public in terms of providing clean renewable energy at lower costs.« less

Capacitive micromachined ultrasonic transducers for medical imaging and therapy.

PubMed

Khuri-Yakub, Butrus T; Oralkan, Omer

2011-05-01

Capacitive micromachined ultrasonic transducers (CMUTs) have been subject to extensive research for the last two decades. Although they were initially developed for air-coupled applications, today their main application space is medical imaging and therapy. This paper first presents a brief description of CMUTs, their basic structure, and operating principles. Our progression of developing several generations of fabrication processes is discussed with an emphasis on the advantages and disadvantages of each process. Monolithic and hybrid approaches for integrating CMUTs with supporting integrated circuits are surveyed. Several prototype transducer arrays with integrated frontend electronic circuits we developed and their use for 2-D and 3-D, anatomical and functional imaging, and ablative therapies are described. The presented results prove the CMUT as a MEMS technology for many medical diagnostic and therapeutic applications.

Capacitive micromachined ultrasonic transducers for medical imaging and therapy

PubMed Central

Khuri-Yakub, Butrus T.; Oralkan, Ömer

2011-01-01

Capacitive micromachined ultrasonic transducers (CMUTs) have been subject to extensive research for the last two decades. Although they were initially developed for air-coupled applications, today their main application space is medical imaging and therapy. This paper first presents a brief description of CMUTs, their basic structure, and operating principles. Our progression of developing several generations of fabrication processes is discussed with an emphasis on the advantages and disadvantages of each process. Monolithic and hybrid approaches for integrating CMUTs with supporting integrated circuits are surveyed. Several prototype transducer arrays with integrated frontend electronic circuits we developed and their use for 2-D and 3-D, anatomical and functional imaging, and ablative therapies are described. The presented results prove the CMUT as a MEMS technology for many medical diagnostic and therapeutic applications. PMID:21860542

Quantum Theory and the Silicon Revolution. Resources in Technology.

ERIC Educational Resources Information Center

Deal, Walter F., III

1995-01-01

This learning activity describes silicon as one of the most plentiful materials on earth, demonstrating how it supplies the building blocks for electronic devices such as transistors, integrated circuits, and microprocessors. It includes a design brief on control technology. (JOW)

A synthetic mammalian electro-genetic transcription circuit.

PubMed

Weber, Wilfried; Luzi, Stefan; Karlsson, Maria; Sanchez-Bustamante, Carlota Diaz; Frey, Urs; Hierlemann, Andreas; Fussenegger, Martin

2009-03-01

Electric signal processing has evolved to manage rapid information transfer in neuronal networks and muscular contraction in multicellular organisms and controls the most sophisticated man-built devices. Using a synthetic biology approach to assemble electronic parts with genetic control units engineered into mammalian cells, we designed an electric power-adjustable transcription control circuit able to integrate the intensity of a direct current over time, to translate the amplitude or frequency of an alternating current into an adjustable genetic readout or to modulate the beating frequency of primary heart cells. Successful miniaturization of the electro-genetic devices may pave the way for the design of novel hybrid electro-genetic implants assembled from electronic and genetic parts.

A synthetic mammalian electro-genetic transcription circuit

PubMed Central

Weber, Wilfried; Luzi, Stefan; Karlsson, Maria; Sanchez-Bustamante, Carlota Diaz; Frey, Urs; Hierlemann, Andreas; Fussenegger, Martin

2009-01-01

Electric signal processing has evolved to manage rapid information transfer in neuronal networks and muscular contraction in multicellular organisms and controls the most sophisticated man-built devices. Using a synthetic biology approach to assemble electronic parts with genetic control units engineered into mammalian cells, we designed an electric power-adjustable transcription control circuit able to integrate the intensity of a direct current over time, to translate the amplitude or frequency of an alternating current into an adjustable genetic readout or to modulate the beating frequency of primary heart cells. Successful miniaturization of the electro-genetic devices may pave the way for the design of novel hybrid electro-genetic implants assembled from electronic and genetic parts. PMID:19190091

A Low Noise CMOS Readout Based on a Polymer-Coated SAW Array for Miniature Electronic Nose

PubMed Central

Wu, Cheng-Chun; Liu, Szu-Chieh; Chiu, Shih-Wen; Tang, Kea-Tiong

2016-01-01

An electronic nose (E-Nose) is one of the applications for surface acoustic wave (SAW) sensors. In this paper, we present a low-noise complementary metal–oxide–semiconductor (CMOS) readout application-specific integrated circuit (ASIC) based on an SAW sensor array for achieving a miniature E-Nose. The center frequency of the SAW sensors was measured to be approximately 114 MHz. Because of interference between the sensors, we designed a low-noise CMOS frequency readout circuit to enable the SAW sensor to obtain frequency variation. The proposed circuit was fabricated in Taiwan Semiconductor Manufacturing Company (TSMC) 0.18 μm 1P6M CMOS process technology. The total chip size was nearly 1203 × 1203 μm2. The chip was operated at a supply voltage of 1 V for a digital circuit and 1.8 V for an analog circuit. The least measurable difference between frequencies was 4 Hz. The detection limit of the system, when estimated using methanol and ethanol, was 0.1 ppm. Their linearity was in the range of 0.1 to 26,000 ppm. The power consumption levels of the analog and digital circuits were 1.742 mW and 761 μW, respectively. PMID:27792131

A Low Noise CMOS Readout Based on a Polymer-Coated SAW Array for Miniature Electronic Nose.

PubMed

Wu, Cheng-Chun; Liu, Szu-Chieh; Chiu, Shih-Wen; Tang, Kea-Tiong

2016-10-25

An electronic nose (E-Nose) is one of the applications for surface acoustic wave (SAW) sensors. In this paper, we present a low-noise complementary metal-oxide-semiconductor (CMOS) readout application-specific integrated circuit (ASIC) based on an SAW sensor array for achieving a miniature E-Nose. The center frequency of the SAW sensors was measured to be approximately 114 MHz. Because of interference between the sensors, we designed a low-noise CMOS frequency readout circuit to enable the SAW sensor to obtain frequency variation. The proposed circuit was fabricated in Taiwan Semiconductor Manufacturing Company (TSMC) 0.18 μm 1P6M CMOS process technology. The total chip size was nearly 1203 × 1203 μm². The chip was operated at a supply voltage of 1 V for a digital circuit and 1.8 V for an analog circuit. The least measurable difference between frequencies was 4 Hz. The detection limit of the system, when estimated using methanol and ethanol, was 0.1 ppm. Their linearity was in the range of 0.1 to 26,000 ppm. The power consumption levels of the analog and digital circuits were 1.742 mW and 761 μW, respectively.

Heuristics for the Hodgkin-Huxley system.

PubMed

Hoppensteadt, Frank

2013-09-01

Hodgkin and Huxley (HH) discovered that voltages control ionic currents in nerve membranes. This led them to describe electrical activity in a neuronal membrane patch in terms of an electronic circuit whose characteristics were determined using empirical data. Due to the complexity of this model, a variety of heuristics, including relaxation oscillator circuits and integrate-and-fire models, have been used to investigate activity in neurons, and these simpler models have been successful in suggesting experiments and explaining observations. Connections between most of the simpler models had not been made clear until recently. Shown here are connections between these heuristics and the full HH model. In particular, we study a new model (Type III circuit): It includes the van der Pol-based models; it can be approximated by a simple integrate-and-fire model; and it creates voltages and currents that correspond, respectively, to the h and V components of the HH system. Copyright © 2012 Elsevier Inc. All rights reserved.

Nanoelectronics from the bottom up.

PubMed

Lu, Wei; Lieber, Charles M

2007-11-01

Electronics obtained through the bottom-up approach of molecular-level control of material composition and structure may lead to devices and fabrication strategies not possible with top-down methods. This review presents a brief summary of bottom-up and hybrid bottom-up/top-down strategies for nanoelectronics with an emphasis on memories based on the crossbar motif. First, we will discuss representative electromechanical and resistance-change memory devices based on carbon nanotube and core-shell nanowire structures, respectively. These device structures show robust switching, promising performance metrics and the potential for terabit-scale density. Second, we will review architectures being developed for circuit-level integration, hybrid crossbar/CMOS circuits and array-based systems, including experimental demonstrations of key concepts such lithography-independent, chemically coded stochastic demultipluxers. Finally, bottom-up fabrication approaches, including the opportunity for assembly of three-dimensional, vertically integrated multifunctional circuits, will be critically discussed.

Modelling of optoelectronic circuits based on resonant tunneling diodes

NASA Astrophysics Data System (ADS)

Rei, João. F. M.; Foot, James A.; Rodrigues, Gil C.; Figueiredo, José M. L.

2017-08-01

Resonant tunneling diodes (RTDs) are the fastest pure electronic semiconductor devices at room temperature. When integrated with optoelectronic devices they can give rise to new devices with novel functionalities due to their highly nonlinear properties and electrical gain, with potential applications in future ultra-wide-band communication systems (see e.g. EU H2020 iBROW Project). The recent coverage on these devices led to the need to have appropriated simulation tools. In this work, we present RTD based optoelectronic circuits simulation packages to provide circuit signal level analysis such as transient and frequency responses. We will present and discuss the models, and evaluate the simulation packages.

Associative Pattern Recognition In Analog VLSI Circuits

NASA Technical Reports Server (NTRS)

Tawel, Raoul

1995-01-01

Winner-take-all circuit selects best-match stored pattern. Prototype cascadable very-large-scale integrated (VLSI) circuit chips built and tested to demonstrate concept of electronic associative pattern recognition. Based on low-power, sub-threshold analog complementary oxide/semiconductor (CMOS) VLSI circuitry, each chip can store 128 sets (vectors) of 16 analog values (vector components), vectors representing known patterns as diverse as spectra, histograms, graphs, or brightnesses of pixels in images. Chips exploit parallel nature of vector quantization architecture to implement highly parallel processing in relatively simple computational cells. Through collective action, cells classify input pattern in fraction of microsecond while consuming power of few microwatts.

Operational compatibility of 30-centimeter-diameter ion thruster with integrally regulated solar array power source

NASA Technical Reports Server (NTRS)

Gooder, S. T.

1977-01-01

System tests were performed in which Integrally Regulated Solar Arrays (IRSA's) were used to directly power the beam and accelerator loads of a 30-cm-diameter, electron bombardment, mercury ion thruster. The remaining thruster loads were supplied from conventional power-processing circuits. This combination of IRSA's and conventional circuits formed a hybrid power processor. Thruster performance was evaluated at 3/4- and 1-A beam currents with both the IRSA-hybrid and conventional power processors and was found to be identical for both systems. Power processing is significantly more efficient with the hybrid system. System dynamics and IRSA response to thruster arcs are also examined.

High-Performance WSe2 Complementary Metal Oxide Semiconductor Technology and Integrated Circuits.

PubMed

Yu, Lili; Zubair, Ahmad; Santos, Elton J G; Zhang, Xu; Lin, Yuxuan; Zhang, Yuhao; Palacios, Tomás

2015-08-12

Because of their extraordinary structural and electrical properties, two-dimensional materials are currently being pursued for applications such as thin-film transistors and integrated circuit. One of the main challenges that still needs to be overcome for these applications is the fabrication of air-stable transistors with industry-compatible complementary metal oxide semiconductor (CMOS) technology. In this work, we experimentally demonstrate a novel high performance air-stable WSe2 CMOS technology with almost ideal voltage transfer characteristic, full logic swing and high noise margin with different supply voltages. More importantly, the inverter shows large voltage gain (∼38) and small static power (picowatts), paving the way for low power electronic system in 2D materials.

Implementation of a noise reduction circuit for spaceflight IR spectrometers

NASA Technical Reports Server (NTRS)

Ramirez, L.; Hickok, R.; Pain, B.; Staller, C.

1992-01-01

The paper discusses the implementation and analysis of a correlated triple sampling circuit using analog subtractor/integrators. The software and test setup for noise measurements are also described. The correlation circuitry is part of the signal chain for a 256-element InSb line array used in the Visible and Infrared Mapping Spectrometer. Using a focal-plane array (FPA) simulator, system noise measurements of 0.7 DN are obtained. A test setup for FPA/SPE (signal processing electronics) characterization along with noise measurements is demonstrated.

Hardware implementation of Lorenz circuit systems for secure chaotic communication applications.

PubMed

Chen, Hsin-Chieh; Liau, Ben-Yi; Hou, Yi-You

2013-02-18

This paper presents the synchronization between the master and slave Lorenz chaotic systems by slide mode controller (SMC)-based technique. A proportional-integral (PI) switching surface is proposed to simplify the task of assigning the performance of the closed-loop error system in sliding mode. Then, extending the concept of equivalent control and using some basic electronic components, a secure communication system is constructed. Experimental results show the feasibility of synchronizing two Lorenz circuits via the proposed SMC. 

Electronic interconnects and devices with topological surface states and methods for fabricating same

DOEpatents

Yazdani, Ali; Ong, N. Phuan; Cava, Robert J.

2017-04-04

An interconnect is disclosed with enhanced immunity of electrical conductivity to defects. The interconnect includes a material with charge carriers having topological surface states. Also disclosed is a method for fabricating such interconnects. Also disclosed is an integrated circuit including such interconnects. Also disclosed is a gated electronic device including a material with charge carriers having topological surface states.

Virtualization of AEGIS: A Study of the Feasibility of Applying Open Architecture Technology to the Surface Navy’s Most Complex Automated Weapon System

DTIC Science & Technology

2011-09-01

diagnostics system. Aerospace and Electronic Systems Magazine, IEEE , 9(2), 40–45. Current version released August 2002 in IEEE Xplore . doi: 10.1109...Cramming more components onto integrated circuits. Electronics, 114–117. Reprinted January 1998 in Proceedings of the IEEE , 86(1), 82–85. doi: S 0018

Failure analysis of electronic parts: Laboratory methods. [for destructive and nondestructive testing

NASA Technical Reports Server (NTRS)

Anstead, R. J. (Editor); Goldberg, E. (Editor)

1975-01-01

Failure analysis test methods are presented for use in analyzing candidate electronic parts and in improving future design reliability. Each test is classified as nondestructive, semidestructive, or destructive. The effects upon applicable part types (i.e. integrated circuit, transitor) are discussed. Methodology is given for performing the following: immersion tests, radio graphic tests, dewpoint tests, gas ambient analysis, cross sectioning, and ultraviolet examination.

Electronic interconnects and devices with topological surface states and methods for fabricating same

DOEpatents

Yazdani, Ali; Ong, N. Phuan; Cava, Robert J.

2016-05-03

An interconnect is disclosed with enhanced immunity of electrical conductivity to defects. The interconnect includes a material with charge carriers having topological surface states. Also disclosed is a method for fabricating such interconnects. Also disclosed is an integrated circuit including such interconnects. Also disclosed is a gated electronic device including a material with charge carriers having topological surface states.

Multiple piezo-patch energy harvesters integrated to a thin plate with AC-DC conversion: analytical modeling and numerical validation

NASA Astrophysics Data System (ADS)

Aghakhani, Amirreza; Basdogan, Ipek; Erturk, Alper

2016-04-01

Plate-like components are widely used in numerous automotive, marine, and aerospace applications where they can be employed as host structures for vibration based energy harvesting. Piezoelectric patch harvesters can be easily attached to these structures to convert the vibrational energy to the electrical energy. Power output investigations of these harvesters require accurate models for energy harvesting performance evaluation and optimization. Equivalent circuit modeling of the cantilever-based vibration energy harvesters for estimation of electrical response has been proposed in recent years. However, equivalent circuit formulation and analytical modeling of multiple piezo-patch energy harvesters integrated to thin plates including nonlinear circuits has not been studied. In this study, equivalent circuit model of multiple parallel piezoelectric patch harvesters together with a resistive load is built in electronic circuit simulation software SPICE and voltage frequency response functions (FRFs) are validated using the analytical distributedparameter model. Analytical formulation of the piezoelectric patches in parallel configuration for the DC voltage output is derived while the patches are connected to a standard AC-DC circuit. The analytic model is based on the equivalent load impedance approach for piezoelectric capacitance and AC-DC circuit elements. The analytic results are validated numerically via SPICE simulations. Finally, DC power outputs of the harvesters are computed and compared with the peak power amplitudes in the AC output case.

Transparent megahertz circuits from solution-processed composite thin films.

PubMed

Liu, Xingqiang; Wan, Da; Wu, Yun; Xiao, Xiangheng; Guo, Shishang; Jiang, Changzhong; Li, Jinchai; Chen, Tangsheng; Duan, Xiangfeng; Fan, Zhiyong; Liao, Lei

2016-04-21

Solution-processed amorphous oxide semiconductors have attracted considerable interest in large-area transparent electronics. However, due to its relative low carrier mobility (∼10 cm(2) V(-1) s(-1)), the demonstrated circuit performance has been limited to 800 kHz or less. Herein, we report solution-processed high-speed thin-film transistors (TFTs) and integrated circuits with an operation frequency beyond the megahertz region on 4 inch glass. The TFTs can be fabricated from an amorphous indium gallium zinc oxide/single-walled carbon nanotube (a-IGZO/SWNT) composite thin film with high yield and high carrier mobility of >70 cm(2) V(-1) s(-1). On-chip microwave measurements demonstrate that these TFTs can deliver an unprecedented operation frequency in solution-processed semiconductors, including an extrinsic cut-off frequency (f(T) = 102 MHz) and a maximum oscillation frequency (f(max) = 122 MHz). Ring oscillators further demonstrated an oscillation frequency of 4.13 MHz, for the first time, realizing megahertz circuit operation from solution-processed semiconductors. Our studies represent an important step toward high-speed solution-processed thin film electronics.

Charge-sensitive front-end electronics with operational amplifiers for CdZnTe detectors

NASA Astrophysics Data System (ADS)

Födisch, P.; Berthel, M.; Lange, B.; Kirschke, T.; Enghardt, W.; Kaever, P.

2016-09-01

Cadmium zinc telluride (CdZnTe, CZT) radiation detectors are suitable for a variety of applications, due to their high spatial resolution and spectroscopic energy performance at room temperature. However, state-of-the-art detector systems require high-performance readout electronics. Though an application-specific integrated circuit (ASIC) is an adequate solution for the readout, requirements of high dynamic range and high throughput are not available in any commercial circuit. Consequently, the present study develops the analog front-end electronics with operational amplifiers for an 8×8 pixelated CZT detector. For this purpose, we modeled an electrical equivalent circuit of the CZT detector with the associated charge-sensitive amplifier (CSA). Based on a detailed network analysis, the circuit design is completed by numerical values for various features such as ballistic deficit, charge-to-voltage gain, rise time, and noise level. A verification of the performance is carried out by synthetic detector signals and a pixel detector. The experimental results with the pixel detector assembly and a 22Na radioactive source emphasize the depth dependence of the measured energy. After pulse processing with depth correction based on the fit of the weighting potential, the energy resolution is 2.2% (FWHM) for the 511 keV photopeak.

Electronically Tunable Differential Integrator: Linear Voltage Controlled Quadrature Oscillator.

PubMed

Nandi, Rabindranath; Pattanayak, Sandhya; Venkateswaran, Palaniandavar; Das, Sagarika

2015-01-01

A new electronically tunable differential integrator (ETDI) and its extension to voltage controlled quadrature oscillator (VCQO) design with linear tuning law are proposed; the active building block is a composite current feedback amplifier with recent multiplication mode current conveyor (MMCC) element. Recently utilization of two different kinds of active devices to form a composite building block is being considered since it yields a superior functional element suitable for improved quality circuit design. The integrator time constant (τ) and the oscillation frequency (ω o ) are tunable by the control voltage (V) of the MMCC block. Analysis indicates negligible phase error (θ e ) for the integrator and low active ω o -sensitivity relative to the device parasitic capacitances. Satisfactory experimental verifications on electronic tunability of some wave shaping applications by the integrator and a double-integrator feedback loop (DIFL) based sinusoid oscillator with linear f o variation range of 60 KHz~1.8 MHz at low THD of 2.1% are verified by both simulation and hardware tests.

Extremely flexible nanoscale ultrathin body silicon integrated circuits on plastic.

PubMed

Shahrjerdi, Davood; Bedell, Stephen W

2013-01-09

In recent years, flexible devices based on nanoscale materials and structures have begun to emerge, exploiting semiconductor nanowires, graphene, and carbon nanotubes. This is primarily to circumvent the existing shortcomings of the conventional flexible electronics based on organic and amorphous semiconductors. The aim of this new class of flexible nanoelectronics is to attain high-performance devices with increased packing density. However, highly integrated flexible circuits with nanoscale transistors have not yet been demonstrated. Here, we show nanoscale flexible circuits on 60 Å thick silicon, including functional ring oscillators and memory cells. The 100-stage ring oscillators exhibit the stage delay of ~16 ps at a power supply voltage of 0.9 V, the best reported for any flexible circuits to date. The mechanical flexibility is achieved by employing the controlled spalling technology, enabling the large-area transfer of the ultrathin body silicon devices to a plastic substrate at room temperature. These results provide a simple and cost-effective pathway to enable ultralight flexible nanoelectronics with unprecedented level of system complexity based on mainstream silicon technology.

The wiring diagram for plant G signaling

DOE PAGES

Colaneri, Alejandro C.; Jones, Alan M.

2014-10-01

Like electronic circuits, the modular arrangement of cell-signaling networks decides how inputs produce outputs. Animal heterotrimeric guanine nucleotide binding proteins (G-proteins) operate as switches in the circuits that signal between extracellular agonists and intracellular effectors. There still is no biochemical evidence for a receptor or its agonist in the plant G-protein pathways. Plant G-proteins deviate in many important ways from the animal paradigm. This paper covers important discoveries from the last two years that enlighten these differences and ends describing alternative wiring diagrams for the plant signaling circuits regulated by G-proteins. Finally, we propose that plant G-proteins are integrated inmore » the signaling circuits as variable resistor rather than switches, controlling the flux of information in response to the cell's metabolic state.« less

GRAPHIC INPUT TABLETS FOR PROGRAMMED INSTRUCTION.

ERIC Educational Resources Information Center

BOOKER, C.A., JR.; AND OTHERS

TO FACILITATE STUDENT-COMPUTER COMMUNICATION IN PROGRAMED INSTRUCTION, A MODIFICATION OF THE RAND TABLET, WHICH CONVERTS POSITION INFORMATION INTO ELECTRICAL SIGNALS, IS PROPOSED. MANUFACTURE OF THE DEVICE WOULD BE MORE ECONOMICAL, AND THE ELECTRONICS PACKAGE, REDESIGNED WITH INTEGRATED CIRCUITS, WOULD BE SMALLER AND MORE FLEXIBLE. MODIFICATION OF…

Water-Gated n-Type Organic Field-Effect Transistors for Complementary Integrated Circuits Operating in an Aqueous Environment.

PubMed

Porrazzo, Rossella; Luzio, Alessandro; Bellani, Sebastiano; Bonacchini, Giorgio Ernesto; Noh, Yong-Young; Kim, Yun-Hi; Lanzani, Guglielmo; Antognazza, Maria Rosa; Caironi, Mario

2017-01-31

The first demonstration of an n-type water-gated organic field-effect transistor (WGOFET) is here reported, along with simple water-gated complementary integrated circuits, in the form of inverting logic gates. For the n-type WGOFET active layer, high-electron-affinity organic semiconductors, including naphthalene diimide co-polymers and a soluble fullerene derivative, have been compared, with the latter enabling a high electric double layer capacitance in the range of 1 μF cm -2 in full accumulation and a mobility-capacitance product of 7 × 10 -3 μF/V s. Short-term stability measurements indicate promising cycling robustness, despite operating the device in an environment typically considered harsh, especially for electron-transporting organic molecules. This work paves the way toward advanced circuitry design for signal conditioning and actuation in an aqueous environment and opens new perspectives in the implementation of active bio-organic interfaces for biosensing and neuromodulation.

Low-Cost Manufacturing of Bioresorbable Conductors by Evaporation-Condensation-Mediated Laser Printing and Sintering of Zn Nanoparticles.

PubMed

Shou, Wan; Mahajan, Bikram K; Ludwig, Brandon; Yu, Xiaowei; Staggs, Joshua; Huang, Xian; Pan, Heng

2017-07-01

Currently, bioresorbable electronic devices are predominantly fabricated by complex and expensive vacuum-based integrated circuit (IC) processes. Here, a low-cost manufacturing approach for bioresorbable conductors on bioresorbable polymer substrates by evaporation-condensation-mediated laser printing and sintering of Zn nanoparticle is reported. Laser sintering of Zn nanoparticles has been technically difficult due to the surface oxide on nanoparticles. To circumvent the surface oxide, a novel approach is discovered to print and sinter Zn nanoparticle facilitated by evaporation-condensation in confined domains. The printing process can be performed on low-temperature substrates in ambient environment allowing easy integration on a roll-to-roll platform for economical manufacturing of bioresorbable electronics. The fabricated Zn conductors show excellent electrical conductivity (≈1.124 × 10 6 S m -1 ), mechanical durability, and water dissolvability. Successful demonstration of strain gauges confirms the potential application in various environmentally friendly sensors and circuits. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Integrated Advanced Microwave Sounding Unit-A (AMSU-A). Performance Verification Report: AMSU-A1 Antenna Drive Subsystem, PN 1331720-2, S/N 106

NASA Technical Reports Server (NTRS)

Luu, D.

1999-01-01

This is the Performance Verification Report, AMSU-A1 Antenna Drive Subsystem, P/N 1331720-2, S/N 106, for the Integrated Advanced Microwave Sounding Unit-A (AMSU-A). The antenna drive subsystem of the METSAT AMSU-A1, S/N 106, P/N 1331720-2, completed acceptance testing per A-ES Test Procedure AE-26002/lD. The test included: Scan Motion and Jitter, Pulse Load Bus Peak Current and Rise Time, Resolver Reading and Position Error, Gain/ Phase Margin, and Operational Gain Margin. The drive motors and electronic circuitry were also tested at the component level. The drive motor test includes: Starting Torque Test, Motor Commutation Test, Resolver Operation/ No-Load Speed Test, and Random Vibration. The electronic circuitry was tested at the Circuit Card Assembly (CCA) level of production; each test exercised all circuit functions. The transistor assembly was tested during the W3 cable assembly (1356941-1) test.

Water-Gated n-Type Organic Field-Effect Transistors for Complementary Integrated Circuits Operating in an Aqueous Environment

PubMed Central

2017-01-01

The first demonstration of an n-type water-gated organic field-effect transistor (WGOFET) is here reported, along with simple water-gated complementary integrated circuits, in the form of inverting logic gates. For the n-type WGOFET active layer, high-electron-affinity organic semiconductors, including naphthalene diimide co-polymers and a soluble fullerene derivative, have been compared, with the latter enabling a high electric double layer capacitance in the range of 1 μF cm–2 in full accumulation and a mobility–capacitance product of 7 × 10–3 μF/V s. Short-term stability measurements indicate promising cycling robustness, despite operating the device in an environment typically considered harsh, especially for electron-transporting organic molecules. This work paves the way toward advanced circuitry design for signal conditioning and actuation in an aqueous environment and opens new perspectives in the implementation of active bio-organic interfaces for biosensing and neuromodulation. PMID:28180187

An Anatomically Constrained Model for Path Integration in the Bee Brain.

PubMed

Stone, Thomas; Webb, Barbara; Adden, Andrea; Weddig, Nicolai Ben; Honkanen, Anna; Templin, Rachel; Wcislo, William; Scimeca, Luca; Warrant, Eric; Heinze, Stanley

2017-10-23

Path integration is a widespread navigational strategy in which directional changes and distance covered are continuously integrated on an outward journey, enabling a straight-line return to home. Bees use vision for this task-a celestial-cue-based visual compass and an optic-flow-based visual odometer-but the underlying neural integration mechanisms are unknown. Using intracellular electrophysiology, we show that polarized-light-based compass neurons and optic-flow-based speed-encoding neurons converge in the central complex of the bee brain, and through block-face electron microscopy, we identify potential integrator cells. Based on plausible output targets for these cells, we propose a complete circuit for path integration and steering in the central complex, with anatomically identified neurons suggested for each processing step. The resulting model circuit is thus fully constrained biologically and provides a functional interpretation for many previously unexplained architectural features of the central complex. Moreover, we show that the receptive fields of the newly discovered speed neurons can support path integration for the holonomic motion (i.e., a ground velocity that is not precisely aligned with body orientation) typical of bee flight, a feature not captured in any previously proposed model of path integration. In a broader context, the model circuit presented provides a general mechanism for producing steering signals by comparing current and desired headings-suggesting a more basic function for central complex connectivity, from which path integration may have evolved. Copyright © 2017 Elsevier Ltd. All rights reserved.

SVGA and XGA active matrix microdisplays for head-mounted applications

NASA Astrophysics Data System (ADS)

Alvelda, Phillip; Bolotski, Michael; Brown, Imani L.

2000-03-01

The MicroDisplay Corporation's liquid crystal on silicon (LCOS) display devices are based on the union of several technologies with the extreme integration capability of conventionally fabricated CMOS substrates. The fast liquid crystal operation modes and new scalable high-performance pixel addressing architectures presented in this paper enable substantially improved color, contrast, and brightness while still satisfying the optical, packaging, and power requirements of portable applications. The entire suite of MicroDisplay's technologies was devised to create a line of mixed-signal application-specific integrated circuits (ASICs) in single-chip display systems. Mixed-signal circuits can integrate computing, memory, and communication circuitry on the same substrate as the display drivers and pixel array for a multifunctional complete system-on-a-chip. System-on-a-chip benefits also include reduced head supported weight requirements through the elimination of off-chip drive electronics.

Electronic Components and Circuits for Extreme Temperature Environments

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Hammoud, Ahmad; Dickman, John E.; Gerber, Scott

2003-01-01

Planetary exploration missions and deep space probes require electrical power management and control systems that are capable of efficient and reliable operation in very low temperature environments. Presently, spacecraft operating in the cold environment of deep space carry a large number of radioisotope heating units in order to maintain the surrounding temperature of the on-board electronics at approximately 20 C. Electronics capable of operation at cryogenic temperatures will not only tolerate the hostile environment of deep space but also reduce system size and weight by eliminating or reducing the radioisotope heating units and their associate structures; thereby reducing system development as well as launch costs. In addition, power electronic circuits designed for operation at low temperatures are expected to result in more efficient systems than those at room temperature. This improvement results from better behavior and tolerance in the electrical and thermal properties of semiconductor and dielectric materials at low temperatures. The Low Temperature Electronics Program at the NASA Glenn Research Center focuses on research and development of electrical components, circuits, and systems suitable for applications in the aerospace environment and deep space exploration missions. Research is being conducted on devices and systems for reliable use down to cryogenic temperatures. Some of the commercial-off-the-shelf as well as developed components that are being characterized include switching devices, resistors, magnetics, and capacitors. Semiconductor devices and integrated circuits including digital-to-analog and analog-to-digital converters, DC/DC converters, operational amplifiers, and oscillators are also being investigated for potential use in low temperature applications. An overview of the NASA Glenn Research Center Low Temperature Electronic Program will be presented in this paper. A description of the low temperature test facilities along with selected data obtained through in-house component and circuit testing will also be discussed. Ongoing research activities that are being performed in collaboration with various organizations will also be presented.

Nondestructive determination of the depth of planar p-n junctions by scanning electron microscopy

NASA Technical Reports Server (NTRS)

Chi, J.-Y.; Gatos, H. C.

1977-01-01

A method was developed for measuring nondestructively the depth of planar p-n junctions in simple devices as well as in integrated-circuit structures with the electron-beam induced current (EBIC) by scanning parallel to the junction in a scanning electron microscope (SEM). The results were found to be in good agreement with those obtained by the commonly used destructive method of lapping at an angle to the junction and staining to reveal the junction.

MOSFET Replacement Devices for Energy-Efficient Digital Integrated Circuits

DTIC Science & Technology

2009-12-17

MOSFET is limited by the thermal voltage kBT/q; it is greater than or equal to 60mV/dec at room temperature. Fig. 1.4 The potential barrier for...60mV/dec can be explained by the electron energy band profile of a MOSFET, which is shown in Fig. 1.4. As Vgs increases, the channel potential is...channel potential (φs) reduces the potential barrier for electron injection, and hence the electron energy (E) increases. According to the Boltzmann

Fabrication process of superconducting integrated circuits with submicron Nb/AlOx/Nb junctions using electron-beam direct writing technique

NASA Astrophysics Data System (ADS)

Aoyagi, Masahiro; Nakagawa, Hiroshi

1997-07-01

For enhancing operating speed of a superconducting integrated circuit (IC), the device size must be reduced into the submicron level. For this purpose, we have introduced electron beam (EB) direct writing technique into the fabrication process of a Nb/AlOx/Nb Josephson IC. A two-layer (PMMA/(alpha) M-CMS) resist method called the portable conformable mask (PCM) method was utilized for having a high aspect ratio. The electron cyclotron resonance (ECR) plasma etching technique was utilized. We have fabricated micron or submicron-size Nb/AlOx/Nb Josephson junctions, where the size of the junction was varied from 2 micrometer to 0.5 micrometer at 0.1 micrometer intervals. These junctions were designed for evaluating the spread of the junction critical current. We achieved minimum-to-maximum Ic spread of plus or minus 13% for 0.81-micrometer-square (plus or minus 16% for 0.67-micrometer-square) 100 junctions spreading in 130- micrometer-square area. The size deviation of 0.05 micrometer was estimated from the spread values. We have successfully demonstrated a small-scale logic IC with 0.9-micrometer-square junctions having a 50 4JL OR-gate chain, where 4JL means four junctions logic family. The circuit was designed for measuring the gate delay. We obtained a preliminary result of the OR- gate logic delay, where the minimum delay was 8.6 ps/gate.

The Need for Optical Means as an Alternative for Electronic Computing

NASA Technical Reports Server (NTRS)

Adbeldayem, Hossin; Frazier, Donald; Witherow, William; Paley, Steve; Penn, Benjamin; Bank, Curtis; Whitaker, Ann F. (Technical Monitor)

2001-01-01

An increasing demand for faster computers is rapidly growing to encounter the fast growing rate of Internet, space communication, and robotic industry. Unfortunately, the Very Large Scale Integration technology is approaching its fundamental limits beyond which the device will be unreliable. Optical interconnections and optical integrated circuits are strongly believed to provide the way out of the extreme limitations imposed on the growth of speed and complexity of nowadays computations by conventional electronics. This paper demonstrates two ultra-fast, all-optical logic gates and a high-density storage medium, which are essential components in building the future optical computer.

VHSIC Electronics and the Cost of Air Force Avionics in the 1990s

DTIC Science & Technology

1990-11-01

circuit. LRM Line replaceable module. LRU Line replaceable unit. LSI Large-scale integration. LSTTL Tow-power Schottky Transitor -to-Transistor Logic...displays, communications/navigation/identification, electronic combat equipment, dispensers, and computers. These CERs, which statistically relate the...some of the reliability numbers, and adding the F-15 and F-16 to obtain the data sample shown in Table 6. Both suite costs and reliability statistics

High-Frequency, 6.2 Angstrom pN Heterojunction Diodes

DTIC Science & Technology

2012-01-01

this paper were grown by solid- source molecular beam epitaxy (MBE). Here, the use of a lower- case letter (p) for the narrow bandgap layer and upper...electron and hole mobilities. High electron mobil- ity transistors ( HEMTs ) fabricated from these materials have shown good operating characteristics [1,2...Furthermore, the first monolithic microwave integrated circuits (MMICs) fabricated using 6.1 Å based HEMTs have been demonstrated [3]. New mate- rials

Superior model for fault tolerance computation in designing nano-sized circuit systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, N. S. S., E-mail: narinderjit@petronas.com.my; Muthuvalu, M. S., E-mail: msmuthuvalu@gmail.com; Asirvadam, V. S., E-mail: vijanth-sagayan@petronas.com.my

2014-10-24

As CMOS technology scales nano-metrically, reliability turns out to be a decisive subject in the design methodology of nano-sized circuit systems. As a result, several computational approaches have been developed to compute and evaluate reliability of desired nano-electronic circuits. The process of computing reliability becomes very troublesome and time consuming as the computational complexity build ups with the desired circuit size. Therefore, being able to measure reliability instantly and superiorly is fast becoming necessary in designing modern logic integrated circuits. For this purpose, the paper firstly looks into the development of an automated reliability evaluation tool based on the generalizationmore » of Probabilistic Gate Model (PGM) and Boolean Difference-based Error Calculator (BDEC) models. The Matlab-based tool allows users to significantly speed-up the task of reliability analysis for very large number of nano-electronic circuits. Secondly, by using the developed automated tool, the paper explores into a comparative study involving reliability computation and evaluation by PGM and, BDEC models for different implementations of same functionality circuits. Based on the reliability analysis, BDEC gives exact and transparent reliability measures, but as the complexity of the same functionality circuits with respect to gate error increases, reliability measure by BDEC tends to be lower than the reliability measure by PGM. The lesser reliability measure by BDEC is well explained in this paper using distribution of different signal input patterns overtime for same functionality circuits. Simulation results conclude that the reliability measure by BDEC depends not only on faulty gates but it also depends on circuit topology, probability of input signals being one or zero and also probability of error on signal lines.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yin, Lan; Harburg, Daniel V.; Rogers, John A., E-mail: jrogers@illinois.edu

Tungsten interconnects in silicon integrated circuits built at the 90 nm node with releasable configurations on silicon on insulator wafers serve as the basis for advanced forms of water-soluble electronics. These physically transient systems have potential uses in applications that range from temporary biomedical implants to zero-waste environmental sensors. Systematic experimental studies and modeling efforts reveal essential aspects of electrical performance in field effect transistors and complementary ring oscillators with as many as 499 stages. Accelerated tests reveal timescales for dissolution of the various constituent materials, including tungsten, silicon, and silicon dioxide. The results demonstrate that silicon complementary metal-oxide-semiconductor circuits formedmore » with tungsten interconnects in foundry-compatible fabrication processes can serve as a path to high performance, mass-produced transient electronic systems.« less

Nanowire nanocomputer as a finite-state machine.

PubMed

Yao, Jun; Yan, Hao; Das, Shamik; Klemic, James F; Ellenbogen, James C; Lieber, Charles M

2014-02-18

Implementation of complex computer circuits assembled from the bottom up and integrated on the nanometer scale has long been a goal of electronics research. It requires a design and fabrication strategy that can address individual nanometer-scale electronic devices, while enabling large-scale assembly of those devices into highly organized, integrated computational circuits. We describe how such a strategy has led to the design, construction, and demonstration of a nanoelectronic finite-state machine. The system was fabricated using a design-oriented approach enabled by a deterministic, bottom-up assembly process that does not require individual nanowire registration. This methodology allowed construction of the nanoelectronic finite-state machine through modular design using a multitile architecture. Each tile/module consists of two interconnected crossbar nanowire arrays, with each cross-point consisting of a programmable nanowire transistor node. The nanoelectronic finite-state machine integrates 180 programmable nanowire transistor nodes in three tiles or six total crossbar arrays, and incorporates both sequential and arithmetic logic, with extensive intertile and intratile communication that exhibits rigorous input/output matching. Our system realizes the complete 2-bit logic flow and clocked control over state registration that are required for a finite-state machine or computer. The programmable multitile circuit was also reprogrammed to a functionally distinct 2-bit full adder with 32-set matched and complete logic output. These steps forward and the ability of our unique design-oriented deterministic methodology to yield more extensive multitile systems suggest that proposed general-purpose nanocomputers can be realized in the near future.

Nanowire nanocomputer as a finite-state machine

PubMed Central

Yao, Jun; Yan, Hao; Das, Shamik; Klemic, James F.; Ellenbogen, James C.; Lieber, Charles M.

2014-01-01

Implementation of complex computer circuits assembled from the bottom up and integrated on the nanometer scale has long been a goal of electronics research. It requires a design and fabrication strategy that can address individual nanometer-scale electronic devices, while enabling large-scale assembly of those devices into highly organized, integrated computational circuits. We describe how such a strategy has led to the design, construction, and demonstration of a nanoelectronic finite-state machine. The system was fabricated using a design-oriented approach enabled by a deterministic, bottom–up assembly process that does not require individual nanowire registration. This methodology allowed construction of the nanoelectronic finite-state machine through modular design using a multitile architecture. Each tile/module consists of two interconnected crossbar nanowire arrays, with each cross-point consisting of a programmable nanowire transistor node. The nanoelectronic finite-state machine integrates 180 programmable nanowire transistor nodes in three tiles or six total crossbar arrays, and incorporates both sequential and arithmetic logic, with extensive intertile and intratile communication that exhibits rigorous input/output matching. Our system realizes the complete 2-bit logic flow and clocked control over state registration that are required for a finite-state machine or computer. The programmable multitile circuit was also reprogrammed to a functionally distinct 2-bit full adder with 32-set matched and complete logic output. These steps forward and the ability of our unique design-oriented deterministic methodology to yield more extensive multitile systems suggest that proposed general-purpose nanocomputers can be realized in the near future. PMID:24469812

Packaging Technology for SiC High Temperature Electronics

NASA Technical Reports Server (NTRS)

Chen, Liang-Yu; Neudeck, Philip G.; Spry, David J.; Meredith, Roger D.; Nakley, Leah M.; Beheim, Glenn M.; Hunter, Gary W.

2017-01-01

High-temperature environment operable sensors and electronics are required for long-term exploration of Venus and distributed control of next generation aeronautical engines. Various silicon carbide (SiC) high temperature sensors, actuators, and electronics have been demonstrated at and above 500 C. A compatible packaging system is essential for long-term testing and application of high temperature electronics and sensors in relevant environments. This talk will discuss a ceramic packaging system developed for high temperature electronics, and related testing results of SiC integrated circuits at 500 C facilitated by this high temperature packaging system, including the most recent progress.

A Wide Range Temperature Sensor Using SOI Technology

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Elbuluk, Malik E.; Hammoud, Ahmad

2009-01-01

Silicon-on-insulator (SOI) technology is becoming widely used in integrated circuit chips for its advantages over the conventional silicon counterpart. The decrease in leakage current combined with lower power consumption allows electronics to operate in a broader temperature range. This paper describes the performance of an SOIbased temperature sensor under extreme temperatures and thermal cycling. The sensor comprised of a temperature-to-frequency relaxation oscillator circuit utilizing an SOI precision timer chip. The circuit was evaluated under extreme temperature exposure and thermal cycling between -190 C and +210 C. The results indicate that the sensor performed well over the entire test temperature range and it was able to re-start at extreme temperatures.

Process design kit and circuits at a 2 µm technology node for flexible wearable electronics applications (Conference Presentation)

NASA Astrophysics Data System (ADS)

Torres-Miranda, Miguel; Petritz, Andreas; Gold, Herbert; Stadlober, Barbara

2016-09-01

In this work we present our most advanced technology node of organic thin film transistors (OTFTs) manufactured with a channel length as short as 2 μm by contact photolithography and a self-alignment process directly on a plastic substrate. Our process design kit (PDK) is described with P-type transistors, capacitors and 3 metal layers for connections of complex circuits. The OTFTs are composed of a double dielectric layer with a photopatternable ultra thin polymer (PNDPE) and alumina, with a thickness on the order of 100 nm. The organic semiconductor is either Pentacene or DNTT, which have a stable average mobility up to 0.1 cm2/Vs. Finally, a polymer (e.g.: Parylene-C) is used as a passivation layer. We describe also our design rules for the placement of standard circuit cells. A "plastic wafer" is fabricated containing 49 dies. Each die of 1 cm2 has between 25 to 50 devices, proving larger scale integration in such a small space, unique in organic technologies. Finally, we present the design (by simulations using a Spice model for OTFTs) and the test of analog and digital basic circuits: amplifiers with DC gains of about 20 dB, comparators, inverters and logic gates working in the frequency range of 1-10 kHz. These standard circuit cells could be used for signal conditioning and integrated as active matrices for flexible sensors from 3rd party institutions, thus opening our fab to new ideas and sophisticated pre-industrial low cost applications for the emerging fields of biomedical devices and wearable electronics for virtual/augmented reality.

Method of producing an electronic unit having a polydimethylsiloxane substrate and circuit lines

DOEpatents

Davidson, James Courtney [Livermore, CA; Krulevitch, Peter A [Pleasanton, CA; Maghribi, Mariam N [Livermore, CA; Benett, William J [Livermore, CA; Hamilton, Julie K [Tracy, CA; Tovar, Armando R [San Antonio, TX

2012-06-19

A system of metalization in an integrated polymer microsystem. A flexible polymer substrate is provided and conductive ink is applied to the substrate. In one embodiment the flexible polymer substrate is silicone. In another embodiment the flexible polymer substrate comprises poly(dimethylsiloxane).

Apparatus for Teaching Physics.

ERIC Educational Resources Information Center

Gottlieb, Herbert H., Ed.

1980-01-01

Summarizes the advantages in using the Daedalon Air Table, which supplies compressed air to the pucks instead of the table surface itself. Describes methods for constructing an electronic null detector using a Weston type galvanometer and an integrated circuit operational amplifier. Also describes a redesigned and improved sound-level meter. (CS)

A Telecommunications Primer for College Presidents. Part I. The Technologies Defined. Educational Technology Profile 25.

ERIC Educational Resources Information Center

Smith, Ralph Lee

1978-01-01

Intended for use by presidents, planners, and administrators to acquaint them with developments in electronic communications, this primer describes cable television, common carrier, videotape recorders and videodiscs, satellites, microwave, circuit integration, digital transmission, data packet switching, and fiber optics. (LBH)

Method for reworkable packaging of high speed, low electrical parasitic power electronics modules through gate drive integration

DOEpatents

Passmore, Brandon; Cole, Zach; Whitaker, Bret; Barkley, Adam; McNutt, Ty; Lostetter, Alexander

2016-08-02

A multichip power module directly connecting the busboard to a printed-circuit board that is attached to the power substrate enabling extremely low loop inductance for extreme environments such as high temperature operation. Wire bond interconnections are taught from the power die directly to the busboard further enabling enable low parasitic interconnections. Integration of on-board high frequency bus capacitors provide extremely low loop inductance. An extreme environment gate driver board allows close physical proximity of gate driver and power stage to reduce overall volume and reduce impedance in the control circuit. Parallel spring-loaded pin gate driver PCB connections allows a reliable and reworkable power module to gate driver interconnections.

Monolithic integration of GMR sensors for standard CMOS-IC current sensing

NASA Astrophysics Data System (ADS)

De Marcellis, A.; Reig, C.; Cubells-Beltrán, M.-D.; Madrenas, J.; Santos, J. D.; Cardoso, S.; Freitas, P. P.

2017-09-01

In this work we report on the development of Giant Magnetoresistive (GMR) sensors for off-line current measurements in standard integrated circuits. An ASIC has been specifically designed and fabricated in the well-known AMS-0.35 μm CMOS technology, including the electronic circuitry for sensor interfacing. It implements an oscillating circuit performing a voltage-to-frequency conversion. Subsequently, a fully CMOS-compatible low temperature post-process has been applied for depositing the GMR sensing devices in a full-bridge configuration onto the buried current straps. Sensitivity and resolution of these sensors have been investigated achieving experimental results that show a detection sensitivity of about 100 Hz/mA, with a resolution of about 5 μA.

Superconductor Digital Electronics: -- Current Status, Future Prospects

NASA Astrophysics Data System (ADS)

Mukhanov, Oleg

2011-03-01

Two major applications of superconductor electronics: communications and supercomputing will be presented. These areas hold a significant promise of a large impact on electronics state-of-the-art for the defense and commercial markets stemming from the fundamental advantages of superconductivity: simultaneous high speed and low power, lossless interconnect, natural quantization, and high sensitivity. The availability of relatively small cryocoolers lowered the foremost market barrier for cryogenically-cooled superconductor electronic systems. These fundamental advantages enabled a novel Digital-RF architecture - a disruptive technological approach changing wireless communications, radar, and surveillance system architectures dramatically. Practical results were achieved for Digital-RF systems in which wide-band, multi-band radio frequency signals are directly digitized and digital domain is expanded throughout the entire system. Digital-RF systems combine digital and mixed signal integrated circuits based on Rapid Single Flux Quantum (RSFQ) technology, superconductor analog filter circuits, and semiconductor post-processing circuits. The demonstrated cryocooled Digital-RF systems are the world's first and fastest directly digitizing receivers operating with live satellite signals, enabling multi-net data links, and performing signal acquisition from HF to L-band with 30 GHz clock frequencies. In supercomputing, superconductivity leads to the highest energy efficiencies per operation. Superconductor technology based on manipulation and ballistic transfer of magnetic flux quanta provides a superior low-power alternative to CMOS and other charge-transfer based device technologies. The fundamental energy consumption in SFQ circuits defined by flux quanta energy 2 x 10-19 J. Recently, a novel energy-efficient zero-static-power SFQ technology, eSFQ/ERSFQ was invented, which retains all advantages of standard RSFQ circuits: high-speed, dc power, internal memory. The voltage bias regulation, determined by SFQ clock, enables the zero-power at zero-activity regimes, indispensable for sensor and quantum bit readout.

A CMOS application-specified-integrated-circuit for 40 GHz high-electron-mobility-transistors automatic biasing

NASA Astrophysics Data System (ADS)

De Matteis, M.; De Blasi, M.; Vallicelli, E. A.; Zannoni, M.; Gervasi, M.; Bau, A.; Passerini, A.; Baschirotto, A.

2017-02-01

This paper presents the design and the experimental results of a CMOS Automatic Control System (ACS) for the biasing of High-Electron-Mobility-Transistors (HEMT). The ACS is the first low-power mixed-signal Application-Specified-Integrated-Circuit (ASIC) able to automatically set and regulate the operating point of an off-chip 6 HEMT Low-Noise-Amplifiers (LNAs), hence it composes a two-chip system (the ACS+LNAs) to be used in the Large Scale Polarization Explorer (LSPE) stratospheric balloon for Cosmic Microwave Background (CMB) signal observation. The hereby presented ACS ASIC provides a reliable instrumentation for gradual and very stable LNAs characterization, switching-on, and operating point (<4 mV accuracy). Moreover, it simplifies the electronic instrumentation needed for biasing the LNAs, since it replaces several off-the-shelf and digital programmable device components. The ASIC prototype has been implemented in a CMOS 0.35 μ m technology (12 mm2 area occupancy). It operates at 4 kHz clock frequency. The power consumption of one-channel ASIC (biasing one LNA) is 3.6 mW, whereas 30 mW are consumed by a single LNA device.

A CMOS application-specified-integrated-circuit for 40 GHz high-electron-mobility-transistors automatic biasing.

PubMed

De Matteis, M; De Blasi, M; Vallicelli, E A; Zannoni, M; Gervasi, M; Bau, A; Passerini, A; Baschirotto, A

2017-02-01

This paper presents the design and the experimental results of a CMOS Automatic Control System (ACS) for the biasing of High-Electron-Mobility-Transistors (HEMT). The ACS is the first low-power mixed-signal Application-Specified-Integrated-Circuit (ASIC) able to automatically set and regulate the operating point of an off-chip 6 HEMT Low-Noise-Amplifiers (LNAs), hence it composes a two-chip system (the ACS+LNAs) to be used in the Large Scale Polarization Explorer (LSPE) stratospheric balloon for Cosmic Microwave Background (CMB) signal observation. The hereby presented ACS ASIC provides a reliable instrumentation for gradual and very stable LNAs characterization, switching-on, and operating point (<4 mV accuracy). Moreover, it simplifies the electronic instrumentation needed for biasing the LNAs, since it replaces several off-the-shelf and digital programmable device components. The ASIC prototype has been implemented in a CMOS 0.35 μm technology (12 mm 2 area occupancy). It operates at 4 kHz clock frequency. The power consumption of one-channel ASIC (biasing one LNA) is 3.6 mW, whereas 30 mW are consumed by a single LNA device.

Corrosion of silicon integrated circuits and lifetime predictions in implantable electronic devices.

PubMed

Vanhoestenberghe, A; Donaldson, N

2013-06-01

Corrosion is a prime concern for active implantable devices. In this paper we review the principles underlying the concepts of hermetic packages and encapsulation, used to protect implanted electronics, some of which remain widely overlooked. We discuss how technological advances have created a need to update the way we evaluate the suitability of both protection methods. We demonstrate how lifetime predictability is lost for very small hermetic packages and introduce a single parameter to compare different packages, with an equation to calculate the minimum sensitivity required from a test method to guarantee a given lifetime. In the second part of this paper, we review the literature on the corrosion of encapsulated integrated circuits (ICs) and, following a new analysis of published data, we propose an equation for the pre-corrosion lifetime of implanted ICs, and discuss the influence of the temperature, relative humidity, encapsulation and field-strength. As any new protection will be tested under accelerated conditions, we demonstrate the sensitivity of acceleration factors to some inaccurately known parameters. These results are relevant for any application of electronics working in a moist environment. Our comparison of encapsulation and hermetic packages suggests that both concepts may be suitable for future implants.

An inexpensive frequency-modulated (FM) audio monitor of time-dependent analog parameters.

PubMed

Langdon, R B; Jacobs, R S

1980-02-01

The standard method for quantification and presentation of an experimental variable in real time is the use of visual display on the ordinate of an oscilloscope screen or chart recorder. This paper describes a relatively simple electronic circuit, using commercially available and inexpensive integrated circuits (IC), which generates an audible tone, the pitch of which varies in proportion to a running variable of interest. This device, which we call an "Audioscope," can accept as input the monitor output from any instrument that expresses an experimental parameter as a dc voltage. The Audioscope is particularly useful in implanting microelectrodes intracellularly. It may also function to mediate the first step in data recording on magnetic tape, and/or data analysis and reduction by electronic circuitary. We estimate that this device can be built, with two-channel capability, for less than $50, and in less than 10 hr by an experienced electronics technician.

High Temperature Capacitive Pressure Sensor Employing a SiC Based Ring Oscillator

NASA Technical Reports Server (NTRS)

Meredith, Roger D.; Neudeck, Philip G.; Ponchak, George E.; Beheim, Glenn M.; Scardelletti, Maximilian; Jordan, Jennifer L.; Chen, Liang-Yu; Spry, David J.; Krawowski, Michael J.; Hunter, Gary W.

2011-01-01

In an effort to develop harsh environment electronic and sensor technologies for aircraft engine safety and monitoring, we have used capacitive-based pressure sensors to shift the frequency of a SiC-electronics-based oscillator to produce a pressure-indicating signal that can be readily transmitted, e.g. wirelessly, to a receiver located in a more benign environment. Our efforts target 500 C, a temperature well above normal operating conditions of commercial circuits but within areas of interest in aerospace engines, deep mining applications and for future missions to the Venus atmosphere. This paper reports for the first time a ring oscillator circuit integrated with a capacitive pressure sensor, both operating at 500 C. This demonstration represents a significant step towards a wireless pressure sensor that can operate at 500 C and confirms the viability of 500 C electronic sensor systems.

High efficiency 4H-SiC betavoltaic power sources using tritium radioisotopes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Thomas, Christopher; Portnoff, Samuel; Spencer, M. G.

Realization of an 18.6% efficient 4H-silicon carbide (4H-SiC) large area betavoltaic power source using the radioisotope tritium is reported. A 200 nm 4H-SiC P{sup +}N junction is used to collect high-energy electrons. The electron source is a titanium tritide (TiH{sup 3}{sub x}) foil, or an integrated titanium tritide region formed by the diffusion of tritium into titanium. The specific activity of the source is directly measured. Dark current measured under short circuit conditions was less than 6.1 pA/cm{sup 2}. Samples measured with an external tritium foil produced an open circuit voltage of 2.09 V, short circuit current of 75.47 nA/cm{sup 2}, fill factor of 0.86,more » and power efficiency of 18.6%. Samples measured with an integrated source produced power efficiencies of 12%. Simulations were done to determine the beta spectrum (modified by self absorption) exiting the source and the electron hole pair generation function in the 4H-SiC. The electron-hole pair generation function in 4H-SiC was modeled as a Gaussian distribution, and a closed form solution of the continuity equation was used to analyze the cell performance. The effective surface recombination velocity in our samples was found to be 10{sup 5}–10{sup 6 }cm/s. Our analysis demonstrated that the surface recombination dominates the performance of a tritium betavoltaic device but that using a thin P{sup +}N junction structure can mitigate some of the negative effects.« less

Sensors, Circuits, and Satellites - NGSS at it's best: the integration of three dimensions with NASA science

NASA Astrophysics Data System (ADS)

Butcher, G. J.; Roberts-Harris, D.

2013-12-01

A set of innovative classroom lessons were developed based on informal learning activities in the 'Sensors, Circuits, and Satellites' kit manufactured by littleBits™ Electronics that are designed to lead students through a logical science content storyline about energy using sound and light and fully implements an integrated approach to the three dimensions of the Next Generation of Science Standards (NGSS). This session will illustrate the integration of NGSS into curriculum by deconstructing lesson design to parse out the unique elements of the 3 dimensions of NGSS. We will demonstrate ways in which we have incorporated the NGSS as we believe they were intended. According to the NGSS, 'The real innovation in the NGSS is the requirement that students are required to operate at the intersection of practice, content, and connection. Performance expectations are the right way to integrate the three dimensions. It provides specificity for educators, but it also sets the tone for how science instruction should look in classrooms. (p. 3). The 'Sensors, Circuits, and Satellites' series of lessons accomplishes this by going beyond just focusing on the conceptual knowledge (the disciplinary core ideas) - traditionally approached by mapping lessons to standards. These lessons incorporate the other 2 dimensions -cross-cutting concepts and the 8-practices of Sciences and Engineering-via an authentic and exciting connection to NASA science, thus implementing the NGSS in the way they were designed to be used: practices and content with the crosscutting concepts. When the NGSS are properly integrated, students are engaged in science and engineering content through the coupling of practice, content and connection. In the past, these two dimensions have been separated as distinct entities. We know now that coupling content and practices better demonstrates what goes on in real world science and engineering. We set out to accomplish what is called for in NGSS by integrating these three dimensions to 'provide students with a context for the content of science, how science knowledge is acquired and understood, and how the sciences are connected through concepts that have universal meaning across the disciplines,' which include connections to authentic NASA science (NGSS, pg.2). The NASA context is embedded in the lessons and designed to interest students in Earth and space science. Research suggests that personal interest, experience, and enthusiasm--critical to children's learning of science at school or in other settings-- may also be linked to later educational and career choices. (Framework for K-12 Science Education: Practices, Cross-cutting concepts, Core ideas, p. 28) Students are encouraged to follow their interests, through additional online resources, real world NASA applications, and career connections offering insight to course offerings and possible majors. Combined with the innovative electronic component kit manufactured by littleBits™ Electronics, students are excited and engaged in authentic science and engineering. Sample circuit used in the Sensors, Circuits, and Satellites kit.

Equivalent circuit-level model of quantum cascade lasers with integrated hot-electron and hot-phonon effects

NASA Astrophysics Data System (ADS)

Yousefvand, H. R.

2017-12-01

We report a study of the effects of hot-electron and hot-phonon dynamics on the output characteristics of quantum cascade lasers (QCLs) using an equivalent circuit-level model. The model is developed from the energy balance equation to adopt the electron temperature in the active region levels, the heat transfer equation to include the lattice temperature, the nonequilibrium phonon rate to account for the hot phonon dynamics and simplified two-level rate equations to incorporate the carrier and photon dynamics in the active region. This technique simplifies the description of the electron-phonon interaction in QCLs far from the equilibrium condition. Using the presented model, the steady and transient responses of the QCLs for a wide range of sink temperatures (80 to 320 K) are investigated and analysed. The model enables us to explain the operating characteristics found in QCLs. This predictive model is expected to be applicable to all QCL material systems operating in pulsed and cw regimes.

An introduction to the BANNING design automation system for shuttle microelectronic hardware development

NASA Technical Reports Server (NTRS)

Mcgrady, W. J.

1979-01-01

The BANNING MOS design system is presented. It complements rather than supplant the normal design activities associated with the design and fabrication of low-power digital electronic equipment. BANNING is user-oriented and requires no programming experience to use effectively. It provides the user a simulation capability to aid in his circuit design and it eliminates most of the manual operations involved in the layout and artwork generation of integrated circuits. An example of its operation is given and some additional background reading is provided.

Fiber-Optic Distribution Of Pulsed Power To Multiple Sensors

NASA Technical Reports Server (NTRS)

Kirkham, Harold

1996-01-01

Optoelectronic systems designed according to time-sharing scheme distribute optical power to multiple integrated-circuit-based sensors in fiber-optic networks. Networks combine flexibility of electronic sensing circuits with advantage of electrical isolation afforded by use of optical fibers instead of electrical conductors to transmit both signals and power. Fiber optics resist corrosion and immune to electromagnetic interference. Sensor networks of this type useful in variety of applications; for example, in monitoring strains in aircraft, buildings, and bridges, and in monitoring and controlling shapes of flexible structures.

A Q-band low noise GaAs pHEMT MMIC power amplifier for pulse electron spin resonance spectrometer

NASA Astrophysics Data System (ADS)

Sitnikov, A.; Kalabukhova, E.; Oliynyk, V.; Kolisnichenko, M.

2017-05-01

We present the design and development of a single stage pulse power amplifier working in the frequency range 32-38 GHz based on a monolithic microwave integrated circuit (MMIC). We have designed the MMIC power amplifier by using the commercially available packaged GaAs pseudomorphic high electron mobility transistor. The circuit fabrication and assembly process includes the elaboration of the matching networks for the MMIC power amplifier and their assembling as well as the topology outline and fabrication of the printed circuit board of the waveguide-microstrip line transitions. At room ambient temperature, the measured peak output power from the prototype amplifier is 35.5 dBm for 16.6 dBm input driving power, corresponding to 19 dB gain. The measured rise/fall time of the output microwave signal modulated by a high-speed PIN diode was obtained as 5-6 ns at 20-250 ns pulse width with 100 kHz pulse repetition rate frequency.

A Q-band low noise GaAs pHEMT MMIC power amplifier for pulse electron spin resonance spectrometer.

PubMed

Sitnikov, A; Kalabukhova, E; Oliynyk, V; Kolisnichenko, M

2017-05-01

We present the design and development of a single stage pulse power amplifier working in the frequency range 32-38 GHz based on a monolithic microwave integrated circuit (MMIC). We have designed the MMIC power amplifier by using the commercially available packaged GaAs pseudomorphic high electron mobility transistor. The circuit fabrication and assembly process includes the elaboration of the matching networks for the MMIC power amplifier and their assembling as well as the topology outline and fabrication of the printed circuit board of the waveguide-microstrip line transitions. At room ambient temperature, the measured peak output power from the prototype amplifier is 35.5 dBm for 16.6 dBm input driving power, corresponding to 19 dB gain. The measured rise/fall time of the output microwave signal modulated by a high-speed PIN diode was obtained as 5-6 ns at 20-250 ns pulse width with 100 kHz pulse repetition rate frequency.

Survey Of High Speed Test Techniques

NASA Astrophysics Data System (ADS)

Gheewala, Tushar

1988-02-01

The emerging technologies for the characterization and production testing of high-speed devices and integrated circuits are reviewed. The continuing progress in the field of semiconductor technologies will, in the near future, demand test techniques to test 10ps to lOOps gate delays, 10 GHz to 100 GHz analog functions and 10,000 to 100,000 gates on a single chip. Clearly, no single test technique would provide a cost-effective answer to all the above demands. A divide-and-conquer approach based on a judicial selection of parametric, functional and high-speed tests will be required. In addition, design-for-test methods need to be pursued which will include on-chip test electronics as well as circuit techniques that minimize the circuit performance sensitivity to allowable process variations. The electron and laser beam based test technologies look very promising and may provide the much needed solutions to not only the high-speed test problem but also to the need for high levels of fault coverage during functional testing.

An ultra-lightweight design for imperceptible plastic electronics.

PubMed

Kaltenbrunner, Martin; Sekitani, Tsuyoshi; Reeder, Jonathan; Yokota, Tomoyuki; Kuribara, Kazunori; Tokuhara, Takeyoshi; Drack, Michael; Schwödiauer, Reinhard; Graz, Ingrid; Bauer-Gogonea, Simona; Bauer, Siegfried; Someya, Takao

2013-07-25

Electronic devices have advanced from their heavy, bulky origins to become smart, mobile appliances. Nevertheless, they remain rigid, which precludes their intimate integration into everyday life. Flexible, textile and stretchable electronics are emerging research areas and may yield mainstream technologies. Rollable and unbreakable backplanes with amorphous silicon field-effect transistors on steel substrates only 3 μm thick have been demonstrated. On polymer substrates, bending radii of 0.1 mm have been achieved in flexible electronic devices. Concurrently, the need for compliant electronics that can not only be flexed but also conform to three-dimensional shapes has emerged. Approaches include the transfer of ultrathin polyimide layers encapsulating silicon CMOS circuits onto pre-stretched elastomers, the use of conductive elastomers integrated with organic field-effect transistors (OFETs) on polyimide islands, and fabrication of OFETs and gold interconnects on elastic substrates to realize pressure, temperature and optical sensors. Here we present a platform that makes electronics both virtually unbreakable and imperceptible. Fabricated directly on ultrathin (1 μm) polymer foils, our electronic circuits are light (3 g m(-2)) and ultraflexible and conform to their ambient, dynamic environment. Organic transistors with an ultra-dense oxide gate dielectric a few nanometres thick formed at room temperature enable sophisticated large-area electronic foils with unprecedented mechanical and environmental stability: they withstand repeated bending to radii of 5 μm and less, can be crumpled like paper, accommodate stretching up to 230% on prestrained elastomers, and can be operated at high temperatures and in aqueous environments. Because manufacturing costs of organic electronics are potentially low, imperceptible electronic foils may be as common in the future as plastic wrap is today. Applications include matrix-addressed tactile sensor foils for health care and monitoring, thin-film heaters, temperature and infrared sensors, displays, and organic solar cells.

Use of a Frequency Divider to Evaluate an SOI NAND Gate Device, Type CHT-7400, for Wide Temperature Applications

NASA Technical Reports Server (NTRS)

Patterson, Richard L.; Hammoud, Ahmad

2010-01-01

Frequency dividers constitute essential elements in designing phase-locked loop circuits and microwave systems. In addition, they are used in providing required clocking signals to microprocessors and can be utilized as digital counters. In some applications, particularly space missions, electronics are often exposed to extreme temperature conditions. Therefore, it is required that circuits designed for such applications incorporate electronic parts and devices that can tolerate and operate efficiently in harsh temperature environments. While present electronic circuits employ COTS (commercial-off- the-shelf) parts that necessitate and are supported with some form of thermal control systems to maintain adequate temperature for proper operation, it is highly desirable and beneficial if the thermal conditioning elements are eliminated. Amongst these benefits are: simpler system design, reduced weight and size, improved reliability, simpler maintenance, and reduced cost. Devices based on silicon-on-insulator (SOI) technology, which utilizes the addition of an insulation layer in the device structure to reduce leakage currents and to minimize parasitic junctions, are well suited for high temperatures due to reduced internal heating as compared to the conventional silicon devices, and less power consumption. In addition, SOI electronic integrated circuits display good tolerance to radiation by virtue of introducing barriers or lengthening the path for penetrating particles and/or providing a region for trapping incident ionization. The benefits of these parts make them suitable for use in deep space and planetary exploration missions where extreme temperatures and radiation are encountered. Although designed for high temperatures, very little data exist on the operation of SOI devices and circuits at cryogenic temperatures. In this work, the performance of a divide-by-two frequency divider circuit built using COTS SOI logic gates was evaluated over a wide temperature range and thermal cycling to determine suitability for use in space exploration missions and terrestrial fields under extreme temperature conditions.

Heat pipes. [technology utilization

NASA Technical Reports Server (NTRS)

1975-01-01

The development and use of heat pipes are described, including space requirements and contributions. Controllable heat pipes, and designs for automatically maintaining a selected constant temperature, are discussed which would add to the versatility and usefulness of heat pipes in industrial processing, manufacture of integrated circuits, and in temperature stabilization of electronics.

Exploitation of Unintentional Information Leakage from Integrated Circuits

ERIC Educational Resources Information Center

Cobb, William E.

2011-01-01

The information leakage of electronic devices, especially those used in cryptographic or other vital applications, represents a serious practical threat to secure systems. While physical implementation attacks have evolved rapidly over the last decade, relatively little work has been done to allow system designers to effectively counter the…

Front and backside processed thin film electronic devices

DOEpatents

Evans, Paul G [Madison, WI; Lagally, Max G [Madison, WI; Ma, Zhenqiang [Middleton, WI; Yuan, Hao-Chih [Lakewood, CO; Wang, Guogong [Madison, WI; Eriksson, Mark A [Madison, WI

2012-01-03

This invention provides thin film devices that have been processed on their front- and backside. The devices include an active layer that is sufficiently thin to be mechanically flexible. Examples of the devices include back-gate and double-gate field effect transistors, double-sided bipolar transistors and 3D integrated circuits.

Pneumatic oscillator circuits for timing and control of integrated microfluidics.

PubMed

Duncan, Philip N; Nguyen, Transon V; Hui, Elliot E

2013-11-05

Frequency references are fundamental to most digital systems, providing the basis for process synchronization, timing of outputs, and waveform synthesis. Recently, there has been growing interest in digital logic systems that are constructed out of microfluidics rather than electronics, as a possible means toward fully integrated laboratory-on-a-chip systems that do not require any external control apparatus. However, the full realization of this goal has not been possible due to the lack of on-chip frequency references, thus requiring timing signals to be provided from off-chip. Although microfluidic oscillators have been demonstrated, there have been no reported efforts to characterize, model, or optimize timing accuracy, which is the fundamental metric of a clock. Here, we report pneumatic ring oscillator circuits built from microfluidic valves and channels. Further, we present a compressible-flow analysis that differs fundamentally from conventional circuit theory, and we show the utility of this physically based model for the optimization of oscillator stability. Finally, we leverage microfluidic clocks to demonstrate circuits for the generation of phase-shifted waveforms, self-driving peristaltic pumps, and frequency division. Thus, pneumatic oscillators can serve as on-chip frequency references for microfluidic digital logic circuits. On-chip clocks and pumps both constitute critical building blocks on the path toward achieving autonomous laboratory-on-a-chip devices.

Military Curricula for Vocational & Technical Education. Basic Electricity and Electronics. CANTRAC A-100-0010. Module 32: Intermediate Oscillators; Module 33: Special Devices; Module 34: Linear Integrated Circuits. Students Guide.

ERIC Educational Resources Information Center

Chief of Naval Education and Training Support, Pensacola, FL.

This student guidebook is designed for use with the study booklets in modules 32 through 34 included in the military-developed course on basic electricity and electronics. The course is one of a number of military-developed curriculum packages selected for adaptation to vocational instructional and curriculum development in a civilian setting. An…

Interchange of electronic design through VHDL and EIS

NASA Technical Reports Server (NTRS)

Wallace, Richard M.

1987-01-01

The need for both robust and unambiguous electronic designs is a direct requirement of the astonishing growth in design and manufacturing capability during recent years. In order to manage the plethora of designs, and have the design data both interchangeable and interoperable, the Very High Speed Integrated Circuits (VHSIC) program is developing two major standards for the electronic design community. The VHSIC Hardware Description Language (VHDL) is designed to be the lingua franca for transmission of design data between designers and their environments. The Engineering Information System (EIS) is designed to ease the integration of data betweeen diverse design automation systems. This paper describes the rationale for the necessity for these two standards and how they provide a synergistic expressive capability across the macrocosm of design environments.

Microprocessor-based integration of microfluidic control for the implementation of automated sensor monitoring and multithreaded optimization algorithms.

PubMed

Ezra, Elishai; Maor, Idan; Bavli, Danny; Shalom, Itai; Levy, Gahl; Prill, Sebastian; Jaeger, Magnus S; Nahmias, Yaakov

2015-08-01

Microfluidic applications range from combinatorial synthesis to high throughput screening, with platforms integrating analog perfusion components, digitally controlled micro-valves and a range of sensors that demand a variety of communication protocols. Currently, discrete control units are used to regulate and monitor each component, resulting in scattered control interfaces that limit data integration and synchronization. Here, we present a microprocessor-based control unit, utilizing the MS Gadgeteer open framework that integrates all aspects of microfluidics through a high-current electronic circuit that supports and synchronizes digital and analog signals for perfusion components, pressure elements, and arbitrary sensor communication protocols using a plug-and-play interface. The control unit supports an integrated touch screen and TCP/IP interface that provides local and remote control of flow and data acquisition. To establish the ability of our control unit to integrate and synchronize complex microfluidic circuits we developed an equi-pressure combinatorial mixer. We demonstrate the generation of complex perfusion sequences, allowing the automated sampling, washing, and calibrating of an electrochemical lactate sensor continuously monitoring hepatocyte viability following exposure to the pesticide rotenone. Importantly, integration of an optical sensor allowed us to implement automated optimization protocols that require different computational challenges including: prioritized data structures in a genetic algorithm, distributed computational efforts in multiple-hill climbing searches and real-time realization of probabilistic models in simulated annealing. Our system offers a comprehensive solution for establishing optimization protocols and perfusion sequences in complex microfluidic circuits.

Millimeter And Submillimeter-Wave Integrated Circuits On Quartz

NASA Technical Reports Server (NTRS)

Mehdi, Imran; Mazed, Mohammad; Siegel, Peter; Smith, R. Peter

1995-01-01

Proposed Quartz substrate Upside-down Integrated Device (QUID) relies on UV-curable adhesive to bond semiconductor with quartz. Integrated circuits including planar GaAs Schottky diodes and passive circuit elements (such as bandpass filters) fabricated on quartz substrates. Circuits designed to operate as mixers in waveguide circuit at millimeter and submillimeter wavelengths. Integrated circuits mechanically more robust, larger, and easier to handle than planar Schottky diode chips. Quartz substrate more suitable for waveguide circuits than GaAs substrate.

Highly integrated optical phased arrays: photonic integrated circuits for optical beam shaping and beam steering

NASA Astrophysics Data System (ADS)

Heck, Martijn J. R.

2017-01-01

Technologies for efficient generation and fast scanning of narrow free-space laser beams find major applications in three-dimensional (3D) imaging and mapping, like Lidar for remote sensing and navigation, and secure free-space optical communications. The ultimate goal for such a system is to reduce its size, weight, and power consumption, so that it can be mounted on, e.g. drones and autonomous cars. Moreover, beam scanning should ideally be done at video frame rates, something that is beyond the capabilities of current opto-mechanical systems. Photonic integrated circuit (PIC) technology holds the promise of achieving low-cost, compact, robust and energy-efficient complex optical systems. PICs integrate, for example, lasers, modulators, detectors, and filters on a single piece of semiconductor, typically silicon or indium phosphide, much like electronic integrated circuits. This technology is maturing fast, driven by high-bandwidth communications applications, and mature fabrication facilities. State-of-the-art commercial PICs integrate hundreds of elements, and the integration of thousands of elements has been shown in the laboratory. Over the last few years, there has been a considerable research effort to integrate beam steering systems on a PIC, and various beam steering demonstrators based on optical phased arrays have been realized. Arrays of up to thousands of coherent emitters, including their phase and amplitude control, have been integrated, and various applications have been explored. In this review paper, I will present an overview of the state of the art of this technology and its opportunities, illustrated by recent breakthroughs.

Single Crystal Diffractometry

NASA Astrophysics Data System (ADS)

Arndt, U. W.; Willis, B. T. M.

2009-06-01

Preface; Acknowledgements; Part I. Introduction; Part II. Diffraction Geometry; Part III. The Design of Diffractometers; Part IV. Detectors; Part V. Electronic Circuits; Part VI. The Production of the Primary Beam (X-rays); Part VII. The Production of the Primary Beam (Neutrons); Part VIII. The Background; Part IX. Systematic Errors in Measuring Relative Integrated Intensities; Part X. Procedure for Measuring Integrated Intensities; Part XI. Derivation and Accuracy of Structure Factors; Part XII. Computer Programs and On-line Control; Appendix; References; Index.

Six-beam homodyne laser Doppler vibrometry based on silicon photonics technology.

PubMed

Li, Yanlu; Zhu, Jinghao; Duperron, Matthieu; O'Brien, Peter; Schüler, Ralf; Aasmul, Soren; de Melis, Mirko; Kersemans, Mathias; Baets, Roel

2018-02-05

This paper describes an integrated six-beam homodyne laser Doppler vibrometry (LDV) system based on a silicon-on-insulator (SOI) full platform technology, with on-chip photo-diodes and phase modulators. Electronics and optics are also implemented around the integrated photonic circuit (PIC) to enable a simultaneous six-beam measurement. Measurement of a propagating guided elastic wave in an aluminum plate (speed ≈ 909 m/s @ 61.5 kHz) is demonstrated.

Electronically controlled spoof localized surface plasmons on the corrugated ring with a shorting pin

NASA Astrophysics Data System (ADS)

Zhang, Chao; Zhou, Yong Jin

2018-07-01

We have demonstrated that spoof localized surface plasmons (LSPs) can be controlled by loading a shorting pin into the corrugated ring resonator in the microwave and terahertz (THz) frequencies. Electronical switchability and tunability of spoof LSPs have been achieved by mounting Schottky barrier diodes and varactor diodes across the slit around the shorting pin in the ground plane. An electronically tunable band-pass filter has been demostrated in the microwave frequencies. Such electronically controlled spoof LSPs devices can find more applications for highly integrated plasmonic circuits in microwave and THz frequencies.

Microwave Integrated Circuit Amplifier Designs Submitted to Qorvo for Fabrication with 0.09-micron High Electron Mobility Transistors (HEMTs) using 2-mil Gallium Nitride (GaN) on Silicon Carbide (SiC)

DTIC Science & Technology

2016-03-01

Fabrication with 0.09-µm High-Electron-Mobility Transistors (HEMTs) Using 2-mil Gallium Nitride (GaN) on Silicon Carbide (SiC) by John E Penn...for Fabrication with 0.09-µm High-Electron-Mobility Transistors (HEMTs) using 2-mil Gallium Nitride (GaN) on Silicon Carbide by John E Penn...µm High-Electron-Mobility Transistors (HEMTs) using 2-mil Gallium Nitride (GaN) on Silicon Carbide 5a. CONTRACT NUMBER 5b. GRANT NUMBER 5c

Excitonic Resonant Emission–Absorption of Surface Plasmons in Transition Metal Dichalcogenides for Chip-Level Electronic–Photonic Integrated Circuits

DOE PAGES

Zhu, Zhuan; Yuan, Jiangtan; Zhou, Haiqing; ...

2016-04-19

The monolithic integration of electronics and photonics has attracted enormous attention due to its potential applications. A major challenge to this integration is the identification of suitable materials that can emit and absorb light at the same wavelength. In this paper we utilize unique excitonic transitions in WS 2 monolayers and show that WS 2 exhibits a perfect overlap between its absorption and photoluminescence spectra. By coupling WS 2 to Ag nanowires, we then show that WS 2 monolayers are able to excite and absorb surface plasmons of Ag nanowires at the same wavelength of exciton photoluminescence. This resonant absorptionmore » by WS 2 is distinguished from that of the ohmic propagation loss of silver nanowires, resulting in a short propagation length of surface plasmons. Our demonstration of resonant optical generation and detection of surface plasmons enables nanoscale optical communication and paves the way for on-chip electronic–photonic integrated circuits.« less

THz-circuits driven by photo-thermoelectric, gate-tunable graphene-junctions

NASA Astrophysics Data System (ADS)

Brenneis, Andreas; Schade, Felix; Drieschner, Simon; Heimbach, Florian; Karl, Helmut; Garrido, Jose A.; Holleitner, Alexander W.

2016-10-01

For future on-chip communication schemes, it is essential to integrate nanoscale materials with an ultrafast optoelectronic functionality into high-frequency circuits. The atomically thin graphene has been widely demonstrated to be suitable for photovoltaic and optoelectronic devices because of its broadband optical absorption and its high electron mobility. Moreover, the ultrafast relaxation of photogenerated charge carriers has been verified in graphene. Here, we show that dual-gated graphene junctions can be functional parts of THz-circuits. As the underlying optoelectronic process, we exploit ultrafast photo-thermoelectric currents. We describe an immediate photo-thermoelectric current of the unbiased device following a femtosecond laser excitation. For a picosecond time-scale after the optical excitation, an additional photo-thermoelectric contribution shows up, which exhibits the fingerprint of a spatially inverted temperature profile. The latter can be understood by the different time-constants and thermal coupling mechanisms of the electron and phonon baths within graphene to the substrate and the metal contacts. The interplay of the processes gives rise to ultrafast electromagnetic transients in high-frequency circuits, and it is equally important for a fundamental understanding of graphene-based ultrafast photodetectors and switches.

THz-circuits driven by photo-thermoelectric, gate-tunable graphene-junctions

PubMed Central

Brenneis, Andreas; Schade, Felix; Drieschner, Simon; Heimbach, Florian; Karl, Helmut; Garrido, Jose A.; Holleitner, Alexander W.

2016-01-01

For future on-chip communication schemes, it is essential to integrate nanoscale materials with an ultrafast optoelectronic functionality into high-frequency circuits. The atomically thin graphene has been widely demonstrated to be suitable for photovoltaic and optoelectronic devices because of its broadband optical absorption and its high electron mobility. Moreover, the ultrafast relaxation of photogenerated charge carriers has been verified in graphene. Here, we show that dual-gated graphene junctions can be functional parts of THz-circuits. As the underlying optoelectronic process, we exploit ultrafast photo-thermoelectric currents. We describe an immediate photo-thermoelectric current of the unbiased device following a femtosecond laser excitation. For a picosecond time-scale after the optical excitation, an additional photo-thermoelectric contribution shows up, which exhibits the fingerprint of a spatially inverted temperature profile. The latter can be understood by the different time-constants and thermal coupling mechanisms of the electron and phonon baths within graphene to the substrate and the metal contacts. The interplay of the processes gives rise to ultrafast electromagnetic transients in high-frequency circuits, and it is equally important for a fundamental understanding of graphene-based ultrafast photodetectors and switches. PMID:27762291

THz-circuits driven by photo-thermoelectric, gate-tunable graphene-junctions.

PubMed

Brenneis, Andreas; Schade, Felix; Drieschner, Simon; Heimbach, Florian; Karl, Helmut; Garrido, Jose A; Holleitner, Alexander W

2016-10-20

For future on-chip communication schemes, it is essential to integrate nanoscale materials with an ultrafast optoelectronic functionality into high-frequency circuits. The atomically thin graphene has been widely demonstrated to be suitable for photovoltaic and optoelectronic devices because of its broadband optical absorption and its high electron mobility. Moreover, the ultrafast relaxation of photogenerated charge carriers has been verified in graphene. Here, we show that dual-gated graphene junctions can be functional parts of THz-circuits. As the underlying optoelectronic process, we exploit ultrafast photo-thermoelectric currents. We describe an immediate photo-thermoelectric current of the unbiased device following a femtosecond laser excitation. For a picosecond time-scale after the optical excitation, an additional photo-thermoelectric contribution shows up, which exhibits the fingerprint of a spatially inverted temperature profile. The latter can be understood by the different time-constants and thermal coupling mechanisms of the electron and phonon baths within graphene to the substrate and the metal contacts. The interplay of the processes gives rise to ultrafast electromagnetic transients in high-frequency circuits, and it is equally important for a fundamental understanding of graphene-based ultrafast photodetectors and switches.

Modulation of distributed feedback (DFB) laser diode with the autonomous Chua's circuit: Theory and experiment

NASA Astrophysics Data System (ADS)

Talla Mbé, Jimmi Hervé; Woafo, Paul

2018-03-01

We report on a simple way to generate complex optical waveforms with very cheap and accessible equipments. The general idea consists in modulating a laser diode with an autonomous electronic oscillator, and in the case of this study, we use a distributed feedback (DFB) laser diode pumped with an electronic Chua's circuit. Based on the adiabatic P-I characteristics of the laser diode at low frequencies, we show that when the total pump is greater than the laser threshold, it is possible to convert the electrical waveforms of the Chua's circuit into optical carriers. But, if that is not the case, the on-off dynamical behavior of the laser permits to obtain many other optical waveform signals, mainly pulses. Our numerical results are consistent with experimental measurements. The work presents the advantage of extending the range of possible chaotic dynamics of the laser diodes in the time domains (millisecond) where it is not usually expected with conventional modulation techniques. Moreover, this new technique of laser diodes modulation brings a general benefit in the physical equipment, reduces their cost and congestion so that, it can constitute a step towards photonic integrated circuits.

Soldering Tool for Integrated Circuits

NASA Technical Reports Server (NTRS)

Takahashi, Ted H.

1987-01-01

Many connections soldered simultaneously in confined spaces. Improved soldering tool bonds integrated circuits onto printed-circuit boards. Intended especially for use with so-called "leadless-carrier" integrated circuits.

Smart image sensors: an emerging key technology for advanced optical measurement and microsystems

NASA Astrophysics Data System (ADS)

Seitz, Peter

1996-08-01

Optical microsystems typically include photosensitive devices, analog preprocessing circuitry and digital signal processing electronics. The advances in semiconductor technology have made it possible today to integrate all photosensitive and electronical devices on one 'smart image sensor' or photo-ASIC (application-specific integrated circuits containing photosensitive elements). It is even possible to provide each 'smart pixel' with additional photoelectronic functionality, without compromising the fill factor substantially. This technological capability is the basis for advanced cameras and optical microsystems showing novel on-chip functionality: Single-chip cameras with on- chip analog-to-digital converters for less than $10 are advertised; image sensors have been developed including novel functionality such as real-time selectable pixel size and shape, the capability of performing arbitrary convolutions simultaneously with the exposure, as well as variable, programmable offset and sensitivity of the pixels leading to image sensors with a dynamic range exceeding 150 dB. Smart image sensors have been demonstrated offering synchronous detection and demodulation capabilities in each pixel (lock-in CCD), and conventional image sensors are combined with an on-chip digital processor for complete, single-chip image acquisition and processing systems. Technological problems of the monolithic integration of smart image sensors include offset non-uniformities, temperature variations of electronic properties, imperfect matching of circuit parameters, etc. These problems can often be overcome either by designing additional compensation circuitry or by providing digital correction routines. Where necessary for technological or economic reasons, smart image sensors can also be combined with or realized as hybrids, making use of commercially available electronic components. It is concluded that the possibilities offered by custom smart image sensors will influence the design and the performance of future electronic imaging systems in many disciplines, reaching from optical metrology to machine vision on the factory floor and in robotics applications.

Parallelism in integrated fluidic circuits

NASA Astrophysics Data System (ADS)

Bousse, Luc J.; Kopf-Sill, Anne R.; Parce, J. W.

1998-04-01

Many research groups around the world are working on integrated microfluidics. The goal of these projects is to automate and integrate the handling of liquid samples and reagents for measurement and assay procedures in chemistry and biology. Ultimately, it is hoped that this will lead to a revolution in chemical and biological procedures similar to that caused in electronics by the invention of the integrated circuit. The optimal size scale of channels for liquid flow is determined by basic constraints to be somewhere between 10 and 100 micrometers . In larger channels, mixing by diffusion takes too long; in smaller channels, the number of molecules present is so low it makes detection difficult. At Caliper, we are making fluidic systems in glass chips with channels in this size range, based on electroosmotic flow, and fluorescence detection. One application of this technology is rapid assays for drug screening, such as enzyme assays and binding assays. A further challenge in this area is to perform multiple functions on a chip in parallel, without a large increase in the number of inputs and outputs. A first step in this direction is a fluidic serial-to-parallel converter. Fluidic circuits will be shown with the ability to distribute an incoming serial sample stream to multiple parallel channels.

Inverter Circuits Using ZnO Nanoparticle Based Thin-Film Transistors for Flexible Electronic Applications

PubMed Central

Vidor, Fábio F.; Meyers, Thorsten; Hilleringmann, Ulrich

2016-01-01

Innovative systems exploring the flexibility and the transparency of modern semiconducting materials are being widely researched by the scientific community and by several companies. For a low-cost production and large surface area applications, thin-film transistors (TFTs) are the key elements driving the system currents. In order to maintain a cost efficient integration process, solution based materials are used as they show an outstanding tradeoff between cost and system complexity. In this paper, we discuss the integration process of ZnO nanoparticle TFTs using a high-k resin as gate dielectric. The performance in dependence on the transistor structure has been investigated, and inverted staggered setups depict an improved performance over the coplanar device increasing both the field-effect mobility and the ION/IOFF ratio. Aiming at the evaluation of the TFT characteristics for digital circuit applications, inverter circuits using a load TFT in the pull-up network and an active TFT in the pull-down network were integrated. The inverters show reasonable switching characteristics and V/V gains. Conjointly, the influence of the geometry ratio and the supply voltage on the devices have been analyzed. Moreover, as all integration steps are suitable to polymeric templates, the fabrication process is fully compatible to flexible substrates. PMID:28335282

Inverter Circuits Using ZnO Nanoparticle Based Thin-Film Transistors for Flexible Electronic Applications.

PubMed

Vidor, Fábio F; Meyers, Thorsten; Hilleringmann, Ulrich

2016-08-23

Innovative systems exploring the flexibility and the transparency of modern semiconducting materials are being widely researched by the scientific community and by several companies. For a low-cost production and large surface area applications, thin-film transistors (TFTs) are the key elements driving the system currents. In order to maintain a cost efficient integration process, solution based materials are used as they show an outstanding tradeoff between cost and system complexity. In this paper, we discuss the integration process of ZnO nanoparticle TFTs using a high- k resin as gate dielectric. The performance in dependence on the transistor structure has been investigated, and inverted staggered setups depict an improved performance over the coplanar device increasing both the field-effect mobility and the I ON / I OFF ratio. Aiming at the evaluation of the TFT characteristics for digital circuit applications, inverter circuits using a load TFT in the pull-up network and an active TFT in the pull-down network were integrated. The inverters show reasonable switching characteristics and V / V gains. Conjointly, the influence of the geometry ratio and the supply voltage on the devices have been analyzed. Moreover, as all integration steps are suitable to polymeric templates, the fabrication process is fully compatible to flexible substrates.

Biasing of Capacitive Micromachined Ultrasonic Transducers.

PubMed

Caliano, Giosue; Matrone, Giulia; Savoia, Alessandro Stuart

2017-02-01

Capacitive micromachined ultrasonic transducers (CMUTs) represent an effective alternative to piezoelectric transducers for medical ultrasound imaging applications. They are microelectromechanical devices fabricated using silicon micromachining techniques, developed in the last two decades in many laboratories. The interest for this novel transducer technology relies on its full compatibility with standard integrated circuit technology that makes it possible to integrate on the same chip the transducers and the electronics, thus enabling the realization of extremely low-cost and high-performance devices, including both 1-D or 2-D arrays. Being capacitive transducers, CMUTs require a high bias voltage to be properly operated in pulse-echo imaging applications. The typical bias supply residual ripple of high-quality high-voltage (HV) generators is in the millivolt range, which is comparable with the amplitude of the received echo signals, and it is particularly difficult to minimize. The aim of this paper is to analyze the classical CMUT biasing circuits, highlighting the features of each one, and to propose two novel HV generator architectures optimized for CMUT biasing applications. The first circuit proposed is an ultralow-residual ripple (<5 [Formula: see text]) HV generator that uses an extremely stable sinusoidal power oscillator topology. The second circuit employs a commercially available integrated step-up converter characterized by a particularly efficient switching topology. The circuit is used to bias the CMUT by charging a buffer capacitor synchronously with the pulsing sequence, thus reducing the impact of the switching noise on the received echo signals. The small area of the circuit (about 1.5 cm 2 ) makes it possible to generate the bias voltage inside the probe, very close to the CMUT, making the proposed solution attractive for portable applications. Measurements and experiments are shown to demonstrate the effectiveness of the new approaches presented.

Conformation-based signal transfer and processing at the single-molecule level

NASA Astrophysics Data System (ADS)

Li, Chao; Wang, Zhongping; Lu, Yan; Liu, Xiaoqing; Wang, Li

2017-11-01

Building electronic components made of individual molecules is a promising strategy for the miniaturization and integration of electronic devices. However, the practical realization of molecular devices and circuits for signal transmission and processing at room temperature has proven challenging. Here, we present room-temperature intermolecular signal transfer and processing using SnCl2Pc molecules on a Cu(100) surface. The in-plane orientations of the molecules are effectively coupled via intermolecular interaction and serve as the information carrier. In the coupled molecular arrays, the signal can be transferred from one molecule to another in the in-plane direction along predesigned routes and processed to realize logical operations. These phenomena enable the use of molecules displaying intrinsic bistable states as complex molecular devices and circuits with novel functions.

Methods for fabrication of flexible hybrid electronics

NASA Astrophysics Data System (ADS)

Street, Robert A.; Mei, Ping; Krusor, Brent; Ready, Steve E.; Zhang, Yong; Schwartz, David E.; Pierre, Adrien; Doris, Sean E.; Russo, Beverly; Kor, Siv; Veres, Janos

2017-08-01

Printed and flexible hybrid electronics is an emerging technology with potential applications in smart labels, wearable electronics, soft robotics, and prosthetics. Printed solution-based materials are compatible with plastic film substrates that are flexible, soft, and stretchable, thus enabling conformal integration with non-planar objects. In addition, manufacturing by printing is scalable to large areas and is amenable to low-cost sheet-fed and roll-to-roll processes. FHE includes display and sensory components to interface with users and environments. On the system level, devices also require electronic circuits for power, memory, signal conditioning, and communications. Those electronic components can be integrated onto a flexible substrate by either assembly or printing. PARC has developed systems and processes for realizing both approaches. This talk presents fabrication methods with an emphasis on techniques recently developed for the assembly of off-the-shelf chips. A few examples of systems fabricated with this approach are also described.

Fractal design concepts for stretchable electronics.

PubMed

Fan, Jonathan A; Yeo, Woon-Hong; Su, Yewang; Hattori, Yoshiaki; Lee, Woosik; Jung, Sung-Young; Zhang, Yihui; Liu, Zhuangjian; Cheng, Huanyu; Falgout, Leo; Bajema, Mike; Coleman, Todd; Gregoire, Dan; Larsen, Ryan J; Huang, Yonggang; Rogers, John A

2014-01-01

Stretchable electronics provide a foundation for applications that exceed the scope of conventional wafer and circuit board technologies due to their unique capacity to integrate with soft materials and curvilinear surfaces. The range of possibilities is predicated on the development of device architectures that simultaneously offer advanced electronic function and compliant mechanics. Here we report that thin films of hard electronic materials patterned in deterministic fractal motifs and bonded to elastomers enable unusual mechanics with important implications in stretchable device design. In particular, we demonstrate the utility of Peano, Greek cross, Vicsek and other fractal constructs to yield space-filling structures of electronic materials, including monocrystalline silicon, for electrophysiological sensors, precision monitors and actuators, and radio frequency antennas. These devices support conformal mounting on the skin and have unique properties such as invisibility under magnetic resonance imaging. The results suggest that fractal-based layouts represent important strategies for hard-soft materials integration.

Fractal design concepts for stretchable electronics

NASA Astrophysics Data System (ADS)

Fan, Jonathan A.; Yeo, Woon-Hong; Su, Yewang; Hattori, Yoshiaki; Lee, Woosik; Jung, Sung-Young; Zhang, Yihui; Liu, Zhuangjian; Cheng, Huanyu; Falgout, Leo; Bajema, Mike; Coleman, Todd; Gregoire, Dan; Larsen, Ryan J.; Huang, Yonggang; Rogers, John A.

2014-02-01

Stretchable electronics provide a foundation for applications that exceed the scope of conventional wafer and circuit board technologies due to their unique capacity to integrate with soft materials and curvilinear surfaces. The range of possibilities is predicated on the development of device architectures that simultaneously offer advanced electronic function and compliant mechanics. Here we report that thin films of hard electronic materials patterned in deterministic fractal motifs and bonded to elastomers enable unusual mechanics with important implications in stretchable device design. In particular, we demonstrate the utility of Peano, Greek cross, Vicsek and other fractal constructs to yield space-filling structures of electronic materials, including monocrystalline silicon, for electrophysiological sensors, precision monitors and actuators, and radio frequency antennas. These devices support conformal mounting on the skin and have unique properties such as invisibility under magnetic resonance imaging. The results suggest that fractal-based layouts represent important strategies for hard-soft materials integration.

Electronic circuits: A compilation. [for electronic equipment in telecommunication

NASA Technical Reports Server (NTRS)

1976-01-01

A compilation containing articles on newly developed electronic circuits and systems is presented. It is divided into two sections: (1) section 1 on circuits and techniques of particular interest in communications technology, and (2) section 2 on circuits designed for a variety of specific applications. The latest patent information available is also given. Circuit diagrams are shown.

Multidisciplinary analysis and design of printed wiring boards

NASA Astrophysics Data System (ADS)

Fulton, Robert E.; Hughes, Joseph L.; Scott, Waymond R., Jr.; Umeagukwu, Charles; Yeh, Chao-Pin

1991-04-01

Modern printed wiring board design depends on electronic prototyping using computer-based simulation and design tools. Existing electrical computer-aided design (ECAD) tools emphasize circuit connectivity with only rudimentary analysis capabilities. This paper describes a prototype integrated PWB design environment denoted Thermal Structural Electromagnetic Testability (TSET) being developed at Georgia Tech in collaboration with companies in the electronics industry. TSET provides design guidance based on enhanced electrical and mechanical CAD capabilities including electromagnetic modeling testability analysis thermal management and solid mechanics analysis. TSET development is based on a strong analytical and theoretical science base and incorporates an integrated information framework and a common database design based on a systematic structured methodology.

Capacitance pressure sensor

DOEpatents

Eaton, William P.; Staple, Bevan D.; Smith, James H.

2000-01-01

A microelectromechanical (MEM) capacitance pressure sensor integrated with electronic circuitry on a common substrate and a method for forming such a device are disclosed. The MEM capacitance pressure sensor includes a capacitance pressure sensor formed at least partially in a cavity etched below the surface of a silicon substrate and adjacent circuitry (CMOS, BiCMOS, or bipolar circuitry) formed on the substrate. By forming the capacitance pressure sensor in the cavity, the substrate can be planarized (e.g. by chemical-mechanical polishing) so that a standard set of integrated circuit processing steps can be used to form the electronic circuitry (e.g. using an aluminum or aluminum-alloy interconnect metallization).

Integrated input protection against discharges for Micro Pattern Gas Detectors readout ASICs

NASA Astrophysics Data System (ADS)

Fiutowski, T.; Dąbrowski, W.; Koperny, S.; Wiącek, P.

2017-02-01

Immunity against possible random discharges inside active detector volume of MPGDs is one of the key aspects that should be addressed in the design of the front-end electronics. This issue becomes particularly critical for systems with high channel counts and high density readout employing the front-end electronics built as multichannel ASICs implemented in modern CMOS technologies, for which the breakdown voltages are in the range of a few Volts. The paper presents the design of various input protection structures integrated in the ASIC manufactured in a 350 nm CMOS process and test results using an electrical circuit to mimic discharges in the detectors.

Electronically controllable spoof localized surface plasmons

NASA Astrophysics Data System (ADS)

Zhou, Yong Jin; Zhang, Chao; Yang, Liu; Xun Xiao, Qian

2017-10-01

Electronically controllable multipolar spoof localized surface plasmons (LSPs) are experimentally demonstrated in the microwave frequencies. It has been shown that half integer order LSPs modes exist on the corrugated ring loaded with a slit, which actually arise from the Fabry-Perot-like resonances. By mounting active components across the slit in the corrugated rings, electronic switchability and tunability of spoof LSPs modes have been accomplished. Both simulated and measured results demonstrate efficient dynamic control of the spoof LSPs. These elements may form the basis of highly integrated programmable plasmonic circuits in microwave and terahertz regimes.

Vacuum Microelectronic Field Emission Array Devices for Microwave Amplification.

NASA Astrophysics Data System (ADS)

Mancusi, Joseph Edward

This dissertation presents the design, analysis, and measurement of vacuum microelectronic devices which use field emission to extract an electron current from arrays of silicon cones. The arrays of regularly-spaced silicon cones, the field emission cathodes or emitters, are fabricated with an integrated gate electrode which controls the electric field at the tip of the cone, and thus the electron current. An anode or collector electrode is placed above the array to collect the emission current. These arrays, which are fabricated in a standard silicon processing facility, are developed for use as high power microwave amplifiers. Field emission has been studied extensively since it was first characterized in 1928, however due to the large electric fields required practical field emission devices are difficult to make. With the development of the semiconductor industry came the development of fabrication equipment and techniques which allow for the manufacture of the precision micron-scale structures necessary for practical field emission devices. The active region of a field emission device is a vacuum, therefore the electron travel is ballistic. This analysis of field emission devices includes electric field and electron emission modeling, development of a device equivalent circuit, analysis of the parameters in the equivalent circuit, and device testing. Variations in device structure are taken into account using a statistical model based upon device measurements. Measurements of silicon field emitter arrays at DC and RF are presented and analyzed. In this dissertation, the equivalent circuit is developed from the analysis of the device structure. The circuit parameters are calculated from geometrical considerations and material properties, or are determined from device measurements. It is necessary to include the emitter resistance in the equivalent circuit model since relatively high resistivity silicon wafers are used. As is demonstrated, the circuit model accurately predicts the magnitude of the emission current at a number of typical bias current levels when the device is operating at frequencies within the range of 10 MHz to 1 GHz. At low frequencies and at high frequencies within this range, certain parameters are negligible, and simplifications may be made in the equivalent circuit model.

Electronic circuit for measuring series connected electrochemical cell voltages

DOEpatents

Ashtiani, Cyrus N.; Stuart, Thomas A.

2000-01-01

An electronic circuit for measuring voltage signals in an energy storage device is disclosed. The electronic circuit includes a plurality of energy storage cells forming the energy storage device. A voltage divider circuit is connected to at least one of the energy storage cells. A current regulating circuit is provided for regulating the current through the voltage divider circuit. A voltage measurement node is associated with the voltage divider circuit for producing a voltage signal which is proportional to the voltage across the energy storage cell.

Experimental observation of sub-terahertz backward-wave amplification in a multi-level microfabricated slow-wave circuit

NASA Astrophysics Data System (ADS)

Baik, Chan-Wook; Ahn, Ho Young; Kim, Yongsung; Lee, Jooho; Hong, Seogwoo; Lee, Sang Hun; Choi, Jun Hee; Kim, Sunil; Jeon, So-Yeon; Yu, SeGi; Collins, George; Read, Michael E.; Lawrence Ives, R.; Kim, Jong Min; Hwang, Sungwoo

2015-11-01

In our earlier paper dealing with dispersion retrieval from ultra-deep, reactive-ion-etched, slow-wave circuits on silicon substrates, it was proposed that splitting high-aspect-ratio circuits into multilevels enabled precise characterization in sub-terahertz frequency regime. This achievement prompted us to investigate beam-wave interaction through a vacuum-sealed integration with a 15-kV, 85-mA, thermionic, electron gun. Our experimental study demonstrates sub-terahertz, backward-wave amplification driven by an external oscillator. The measured output shows a frequency downshift, as well as power amplification, from beam loading even with low beam perveance. This offers a promising opportunity for the development of terahertz radiation sources, based on silicon technologies.

Multiple independent autonomous hydraulic oscillators driven by a common gravity head.

PubMed

Kim, Sung-Jin; Yokokawa, Ryuji; Lesher-Perez, Sasha Cai; Takayama, Shuichi

2015-06-15

Self-switching microfluidic circuits that are able to perform biochemical experiments in a parallel and autonomous manner, similar to instruction-embedded electronics, are rarely implemented. Here, we present design principles and demonstrations for gravity-driven, integrated, microfluidic pulsatile flow circuits. With a common gravity head as the only driving force, these fluidic oscillator arrays realize a wide range of periods (0.4 s-2 h) and flow rates (0.10-63 μl min(-1)) with completely independent timing between the multiple oscillator sub-circuits connected in parallel. As a model application, we perform systematic, parallel analysis of endothelial cell elongation response to different fluidic shearing patterns generated by the autonomous microfluidic pulsed flow generation system.

Experimental observation of sub-terahertz backward-wave amplification in a multi-level microfabricated slow-wave circuit

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baik, Chan-Wook, E-mail: cw.baik@samsung.com; Ahn, Ho Young; Kim, Yongsung

2015-11-09

In our earlier paper dealing with dispersion retrieval from ultra-deep, reactive-ion-etched, slow-wave circuits on silicon substrates, it was proposed that splitting high-aspect-ratio circuits into multilevels enabled precise characterization in sub-terahertz frequency regime. This achievement prompted us to investigate beam-wave interaction through a vacuum-sealed integration with a 15-kV, 85-mA, thermionic, electron gun. Our experimental study demonstrates sub-terahertz, backward-wave amplification driven by an external oscillator. The measured output shows a frequency downshift, as well as power amplification, from beam loading even with low beam perveance. This offers a promising opportunity for the development of terahertz radiation sources, based on silicon technologies.

Analog Binaural Circuits for Detecting and Locating Leaks

NASA Technical Reports Server (NTRS)

Hartley, Frank T.

2003-01-01

Very-large-scale integrated (VLSI) analog binaural signal-processing circuits have been proposed for use in detecting and locating leaks that emit noise in the ultrasonic frequency range. These circuits would be designed to function even in the presence of intense lower-frequency background noise that could include sounds associated with flow and pumping. Each of the proposed circuits would include the approximate electronic equivalent of a right and a left cochlea plus correlator circuits. A pair of transducers (microphones or accelerometers), corresponding to right and left ears, would provide the inputs to their respective cochleas from different locations (e.g., from different positions along a pipe). The correlation circuits plus some additional external circuits would determine the difference between the times of arrival of a common leak sound at the two transducers. Then the distance along the pipe from either transducer to the leak could be estimated from the time difference and the speed of sound along the pipe. If three or more pairs of transducers and cochlear/correlator circuits were available and could suitably be positioned, it should be possible to locate a leak in three dimensions by use of sound propagating through air.

Software-defined networking control plane for seamless integration of multiple silicon photonic switches in Datacom networks.

PubMed

Shen, Yiwen; Hattink, Maarten H N; Samadi, Payman; Cheng, Qixiang; Hu, Ziyiz; Gazman, Alexander; Bergman, Keren

2018-04-16

Silicon photonics based switches offer an effective option for the delivery of dynamic bandwidth for future large-scale Datacom systems while maintaining scalable energy efficiency. The integration of a silicon photonics-based optical switching fabric within electronic Datacom architectures requires novel network topologies and arbitration strategies to effectively manage the active elements in the network. We present a scalable software-defined networking control plane to integrate silicon photonic based switches with conventional Ethernet or InfiniBand networks. Our software-defined control plane manages both electronic packet switches and multiple silicon photonic switches for simultaneous packet and circuit switching. We built an experimental Dragonfly network testbed with 16 electronic packet switches and 2 silicon photonic switches to evaluate our control plane. Observed latencies occupied by each step of the switching procedure demonstrate a total of 344 µs control plane latency for data-center and high performance computing platforms.

Stress redistribution and damage in interconnects caused by electromigration

NASA Astrophysics Data System (ADS)

Chiras, Stefanie Ruth

Electromigration has long been recognized as a phenomenon that induces mass redistribution in metals which, when constrained, can lead to the creation of stress. Since the development of the integrated circuit, electromigration. in interconnects, (the metal lines which carry current between devices in integrated circuits), has become a reliability concern. The primary failure mechanism in the interconnects is usually voiding, which causes electrical resistance increases in the circuit. In some cases, however, another failure mode occurs, fracture of the surrounding dielectric driven by electromigration induced compressive stresses within the interconnect. It is this failure mechanism that is the focus of this thesis. To study dielectric fracture, both residual processing stresses and the development of electromigration induced stress in isolated, constrained interconnects was measured. The high-resolution measurements were made using two types of piezospectroscopy, complemented by finite element analysis (FEA). Both procedures directly measured stress in the underlying or neighboring substrate and used FEA to determine interconnect stresses. These interconnect stresses were related to the effected circuit failure mode through post-test scanning electron microscopy and resistance measurements taken during electromigration testing. The results provide qualitative evidence of electromigration driven passivation fracture, and quantitative analysis of the theoretical model of the failure, the "immortal" interconnect concept.

Relaxation oscillator-realized artificial electronic neurons, their responses, and noise

NASA Astrophysics Data System (ADS)

Lim, Hyungkwang; Ahn, Hyung-Woo; Kornijcuk, Vladimir; Kim, Guhyun; Seok, Jun Yeong; Kim, Inho; Hwang, Cheol Seong; Jeong, Doo Seok

2016-05-01

A proof-of-concept relaxation oscillator-based leaky integrate-and-fire (ROLIF) neuron circuit is realized by using an amorphous chalcogenide-based threshold switch and non-ideal operational amplifier (op-amp). The proposed ROLIF neuron offers biologically plausible features such as analog-type encoding, signal amplification, unidirectional synaptic transmission, and Poisson noise. The synaptic transmission between pre- and postsynaptic neurons is achieved through a passive synapse (simple resistor). The synaptic resistor coupled to the non-ideal op-amp realizes excitatory postsynaptic potential (EPSP) evolution that evokes postsynaptic neuron spiking. In an attempt to generalize our proposed model, we theoretically examine ROLIF neuron circuits adopting different non-ideal op-amps having different gains and slew rates. The simulation results indicate the importance of gain in postsynaptic neuron spiking, irrespective of the slew rate (as long as the rate exceeds a particular value), providing the basis for the ROLIF neuron circuit design. Eventually, the behavior of a postsynaptic neuron in connection to multiple presynaptic neurons via synapses is highlighted in terms of EPSP evolution amid simultaneously incident asynchronous presynaptic spikes, which in fact reveals an important role of the random noise in spatial integration.A proof-of-concept relaxation oscillator-based leaky integrate-and-fire (ROLIF) neuron circuit is realized by using an amorphous chalcogenide-based threshold switch and non-ideal operational amplifier (op-amp). The proposed ROLIF neuron offers biologically plausible features such as analog-type encoding, signal amplification, unidirectional synaptic transmission, and Poisson noise. The synaptic transmission between pre- and postsynaptic neurons is achieved through a passive synapse (simple resistor). The synaptic resistor coupled to the non-ideal op-amp realizes excitatory postsynaptic potential (EPSP) evolution that evokes postsynaptic neuron spiking. In an attempt to generalize our proposed model, we theoretically examine ROLIF neuron circuits adopting different non-ideal op-amps having different gains and slew rates. The simulation results indicate the importance of gain in postsynaptic neuron spiking, irrespective of the slew rate (as long as the rate exceeds a particular value), providing the basis for the ROLIF neuron circuit design. Eventually, the behavior of a postsynaptic neuron in connection to multiple presynaptic neurons via synapses is highlighted in terms of EPSP evolution amid simultaneously incident asynchronous presynaptic spikes, which in fact reveals an important role of the random noise in spatial integration. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr01278g

Thermally-isolated silicon-based integrated circuits and related methods

DOEpatents

Wojciechowski, Kenneth; Olsson, Roy H.; Clews, Peggy J.; Bauer, Todd

2017-05-09

Thermally isolated devices may be formed by performing a series of etches on a silicon-based substrate. As a result of the series of etches, silicon material may be removed from underneath a region of an integrated circuit (IC). The removal of the silicon material from underneath the IC forms a gap between remaining substrate and the integrated circuit, though the integrated circuit remains connected to the substrate via a support bar arrangement that suspends the integrated circuit over the substrate. The creation of this gap functions to release the device from the substrate and create a thermally-isolated integrated circuit.

Heterogeneous Silicon III-V Mode-Locked Lasers

NASA Astrophysics Data System (ADS)

Davenport, Michael Loehrlein

Mode-locked lasers are useful for a variety of applications, such as sensing, telecommunication, and surgical instruments. This work focuses on integrated-circuit mode-locked lasers: those that combine multiple optical and electronic functions and are manufactured together on a single chip. While this allows production at high volume and lower cost, the true potential of integration is to open applications for mode-locked laser diodes where solid state lasers cannot fit, either due to size and power consumption constraints, or where small optical or electrical paths are needed for high bandwidth. Unfortunately, most high power and highly stable mode-locked laser diode demonstrations in scientific literature are based on the Fabry-Perot resonator design, with cleaved mirrors, and are unsuitable for use in integrated circuits because of the difficulty of producing integrated Fabry-Perot cavities. We use silicon photonics and heterogeneous integration with III-V gain material to produce the most powerful and lowest noise fully integrated mode-locked laser diode in the 20 GHz frequency range. If low noise and high peak power are required, it is arguably the best performing fully integrated mode-locked laser ever demonstrated. We present the design methodology and experimental pathway to realize a fully integrated mode-locked laser diode. The construction of the device, beginning with the selection of an integration platform, and proceeding through the fabrication process to final optimization, is presented in detail. The dependence of mode-locked laser performance on a wide variety of design parameters is presented. Applications for integrated circuit mode-locked lasers are also discussed, as well as proposed methods for using integration to improve mode-locking performance to beyond the current state of the art.

European roadmap on superconductive electronics - status and perspectives

NASA Astrophysics Data System (ADS)

Anders, S.; Blamire, M. G.; Buchholz, F.-Im.; Crété, D.-G.; Cristiano, R.; Febvre, P.; Fritzsch, L.; Herr, A.; Il'ichev, E.; Kohlmann, J.; Kunert, J.; Meyer, H.-G.; Niemeyer, J.; Ortlepp, T.; Rogalla, H.; Schurig, T.; Siegel, M.; Stolz, R.; Tarte, E.; ter Brake, H. J. M.; Toepfer, H.; Villegier, J.-C.; Zagoskin, A. M.; Zorin, A. B.

2010-12-01

Executive SummaryFor four decades semiconductor electronics has followed Moore’s law: with each generation of integration the circuit features became smaller, more complex and faster. This development is now reaching a wall so that smaller is no longer any faster. The clock rate has saturated at about 3-5 GHz and the parallel processor approach will soon reach its limit. The prime reason for the limitation the semiconductor electronics experiences is not the switching speed of the individual transistor, but its power dissipation and thus heat. Digital superconductive electronics is a circuit- and device-technology that is inherently faster at much less power dissipation than semiconductor electronics. It makes use of superconductors and Josephson junctions as circuit elements, which can provide extremely fast digital devices in a frequency range - dependent on the material - of hundreds of GHz: for example a flip-flop has been demonstrated that operated at 750 GHz. This digital technique is scalable and follows similar design rules as semiconductor devices. Its very low power dissipation of only 0.1 μW per gate at 100 GHz opens the possibility of three-dimensional integration. Circuits like microprocessors and analogue-to-digital converters for commercial and military applications have been demonstrated. In contrast to semiconductor circuits, the operation of superconducting circuits is based on naturally standardized digital pulses the area of which is exactly the flux quantum Φ0. The flux quantum is also the natural quantization unit for digital-to-analogue and analogue-to-digital converters. The latter application is so precise, that it is being used as voltage standard and that the physical unit ‘Volt’ is defined by means of this standard. Apart from its outstanding features for digital electronics, superconductive electronics provides also the most sensitive sensor for magnetic fields: the Superconducting Quantum Interference Device (SQUID). Amongst many other applications SQUIDs are used as sensors for magnetic heart and brain signals in medical applications, as sensor for geological surveying and food-processing and for non-destructive testing. As amplifiers of electrical signals, SQUIDs can nearly reach the theoretical limit given by Quantum Mechanics. A further important field of application is the detection of very weak signals by ‘transition-edge’ bolometers, superconducting nanowire single-photon detectors, and superconductive tunnel junctions. Their application as radiation detectors in a wide frequency range, from microwaves to X-rays is now standard. The very low losses of superconductors have led to commercial microwave filter designs that are now widely used in the USA in base stations for cellular phones and in military communication applications. The number of demonstrated applications is continuously increasing and there is no area in professional electronics, in which superconductive electronics cannot be applied and surpasses the performance of classical devices. Superconductive electronics has to be cooled to very low temperatures. Whereas this was a bottleneck in the past, cooling techniques have made a huge step forward in recent years: very compact systems with high reliability and a wide range of cooling power are available commercially, from microcoolers of match-box size with milli-Watt cooling power to high-reliability coolers of many Watts of cooling power for satellite applications. Superconductive electronics will not replace semiconductor electronics and similar room-temperature techniques in standard applications, but for those applications which require very high speed, low-power consumption, extreme sensitivity or extremely high precision, superconductive electronics is superior to all other available techniques. To strengthen the European competitiveness in superconductor electronics research projects have to be set-up in the following field: Ultra-sensitive sensing and imaging. Quantum measurement instrumentation. Advanced analogue-to-digital converters. Superconductive electronics technology.

Intermetallic compounds in 3D integrated circuits technology: a brief review

NASA Astrophysics Data System (ADS)

Annuar, Syahira; Mahmoodian, Reza; Hamdi, Mohd; Tu, King-Ning

2017-12-01

The high performance and downsizing technology of three-dimensional integrated circuits (3D-ICs) for mobile consumer electronic products have gained much attention in the microelectronics industry. This has been driven by the utilization of chip stacking by through-Si-via and solder microbumps. Pb-free solder microbumps are intended to replace conventional Pb-containing solder joints due to the rising awareness of environmental preservation. The use of low-volume solder microbumps has led to crucial constraints that cause several reliability issues, including excessive intermetallic compounds (IMCs) formation and solder microbump embrittlement due to IMCs growth. This article reviews technologies related to 3D-ICs, IMCs formation mechanisms and reliability issues concerning IMCs with Pb-free solder microbumps. Finally, future outlook on the potential growth of research in this area is discussed.

Intermetallic compounds in 3D integrated circuits technology: a brief review.

PubMed

Annuar, Syahira; Mahmoodian, Reza; Hamdi, Mohd; Tu, King-Ning

2017-01-01

The high performance and downsizing technology of three-dimensional integrated circuits (3D-ICs) for mobile consumer electronic products have gained much attention in the microelectronics industry. This has been driven by the utilization of chip stacking by through-Si-via and solder microbumps. Pb-free solder microbumps are intended to replace conventional Pb-containing solder joints due to the rising awareness of environmental preservation. The use of low-volume solder microbumps has led to crucial constraints that cause several reliability issues, including excessive intermetallic compounds (IMCs) formation and solder microbump embrittlement due to IMCs growth. This article reviews technologies related to 3D-ICs, IMCs formation mechanisms and reliability issues concerning IMCs with Pb-free solder microbumps. Finally, future outlook on the potential growth of research in this area is discussed.

Scaling of graphene integrated circuits.

PubMed

Bianchi, Massimiliano; Guerriero, Erica; Fiocco, Marco; Alberti, Ruggero; Polloni, Laura; Behnam, Ashkan; Carrion, Enrique A; Pop, Eric; Sordan, Roman

2015-05-07

The influence of transistor size reduction (scaling) on the speed of realistic multi-stage integrated circuits (ICs) represents the main performance metric of a given transistor technology. Despite extensive interest in graphene electronics, scaling efforts have so far focused on individual transistors rather than multi-stage ICs. Here we study the scaling of graphene ICs based on transistors from 3.3 to 0.5 μm gate lengths and with different channel widths, access lengths, and lead thicknesses. The shortest gate delay of 31 ps per stage was obtained in sub-micron graphene ROs oscillating at 4.3 GHz, which is the highest oscillation frequency obtained in any strictly low-dimensional material to date. We also derived the fundamental Johnson limit, showing that scaled graphene ICs could be used at high frequencies in applications with small voltage swing.

Computer aided design of monolithic microwave and millimeter wave integrated circuits and subsystems

NASA Astrophysics Data System (ADS)

Ku, Walter H.

1987-08-01

This interim technical report presents results of research on the computer aided design of monolithic microwave and millimeter wave integrated circuits and subsystems. A specific objective is to extend the state-of-the-art of the Computer Aided Design (CAD) of the monolithic microwave and millimeter wave integrated circuits (MIMIC). In this reporting period, we have derived a new model for the high electron mobility transistor (HEMT) based on a nonlinear charge control formulation which takes into consideration the variation of the 2DEG distance offset from the heterointerface as a function of bias. Pseudomorphic InGaAs/GaAs HEMT devices have been successfully fabricated at UCSD. For a 1 micron gate length, a maximum transconductance of 320 mS/mm was obtained. In cooperation with TRW, devices with 0.15 micron and 0.25 micron gate lengths have been successfully fabricated and tested. New results on the design of ultra-wideband distributed amplifiers using 0.15 micron pseudomorphic InGaAs/GaAs HEMT's have also been obtained. In addition, two-dimensional models of the submicron MESFET's, HEMT's and HBT's are currently being developed for the CRAY X-MP/48 supercomputer. Preliminary results obtained are also presented in this report.

Typical effects of laser dazzling CCD camera

NASA Astrophysics Data System (ADS)

Zhang, Zhen; Zhang, Jianmin; Shao, Bibo; Cheng, Deyan; Ye, Xisheng; Feng, Guobin

2015-05-01

In this article, an overview of laser dazzling effect to buried channel CCD camera is given. The CCDs are sorted into staring and scanning types. The former includes the frame transfer and interline transfer types. The latter includes linear and time delay integration types. All CCDs must perform four primary tasks in generating an image, which are called charge generation, charge collection, charge transfer and charge measurement. In camera, the lenses are needed to input the optical signal to the CCD sensors, in which the techniques for erasing stray light are used. And the electron circuits are needed to process the output signal of CCD, in which many electronic techniques are used. The dazzling effects are the conjunct result of light distribution distortion and charge distribution distortion, which respectively derive from the lens and the sensor. Strictly speaking, in lens, the light distribution is not distorted. In general, the lens are so well designed and fabricated that its stray light can be neglected. But the laser is of much enough intensity to make its stray light obvious. In CCD image sensors, laser can induce a so large electrons generation. Charges transfer inefficiency and charges blooming will cause the distortion of the charge distribution. Commonly, the largest signal outputted from CCD sensor is restricted by capability of the collection well of CCD, and can't go beyond the dynamic range for the subsequent electron circuits maintaining normal work. So the signal is not distorted in the post-processing circuits. But some techniques in the circuit can make some dazzling effects present different phenomenon in final image.

Electrically Erasable Programmable Integrated Circuits for Replacement of Obsolete TTL Logic

DTIC Science & Technology

1991-12-01

different discrete devices" [7]. Fowler-Nordheim Tunneling Simplified Theory. Electrons in polysilicon are usually prevented from entering SiO 2 by an...overcomes the energy barrier, the tunneling electrons will not return to the polysilicon but will be carried by the electric field, causing a current to flow...Floating Gate Transistors A floating gate transistor is an insulated-gate field effect transistor (FET) that has a gate, usually made of polysilicon , which

Comparing SiGe HBT Amplifier Circuits for Fast Single-shot Spin Readout

NASA Astrophysics Data System (ADS)

England, Troy; Curry, Matthew; Carr, Stephen; Mounce, Andrew; Jock, Ryan; Sharma, Peter; Bureau-Oxton, Chloe; Rudolph, Martin; Hardin, Terry; Carroll, Malcolm

Fast, low-power quantum state readout is one of many challenges facing quantum information processing. Single electron transistors (SETs) are potentially fast, sensitive detectors for performing spin readout. From a circuit perspective, however, their output impedance and nonlinear conductance are ill suited to drive the parasitic capacitance of coaxial conductors used in cryogenic environments, necessitating a cryogenic amplification stage. We will compare two amplifiers based on single-transistor circuits implemented with silicon germanium heterojunction bipolar transistors. Both amplifiers provide gain at low power levels, but the dynamics of each circuit vary significantly. We will explore the gain mechanisms, linearity, and noise of each circuit and explain the situations in which each amplifier is best used. This work was performed, in part, at the Center for Integrated Nanotechnologies, a U.S. DOE Office of Basic Energy Sciences user facility. Sandia National Laboratories is a multi-program laboratory operated by Sandia Corporation, a Lockheed-Martin Company, for the U. S. Department of Energy under Contract No. DE-AC04-94AL85000.

Compact, Single-Stage MMIC InP HEMT Amplifier

NASA Technical Reports Server (NTRS)

Pukala, David; Samoska, Lorene; Fung, King Man; Gaier, Todd; Deal, W. R.; Mei, Gerry; Radisic, Vesna; Lai, Richard

2008-01-01

A monolithic micro - wave integrated-circuit (MMIC) singlestage amplifier containing an InP-based high-electron-mobility transistor (HEMT) plus coplanar-waveguide (CPW) transmission lines for impedance matching and input and output coupling, all in a highly miniaturized layout as needed for high performance at operating frequencies of hundreds of gigahertz is described.

The Effect of Integrating Lab Experiments in Electronic Circuits into Mathematic Studies--A Case Study

ERIC Educational Resources Information Center

Sabag, Nissim

2017-01-01

Background: The importance of knowledge and skills in mathematics for electrical engineering students is well known. Engineers and engineering educators agree that any engineering curriculum must include plenty of mathematics studies to enrich the engineer's toolbox. Nevertheless, little attention has been given to the possible contribution of…

The Effectiveness of an Electronic Security Management System in a Privately Owned Apartment Complex

ERIC Educational Resources Information Center

Greenberg, David F.; Roush, Jeffrey B.

2009-01-01

Poisson and negative binomial regression methods are used to analyze the monthly time series data to determine the effects of introducing an integrated security management system including closed-circuit television (CCTV), door alarm monitoring, proximity card access, and emergency call boxes to a large privately-owned complex of apartment…

MMIC Amplifier Produces Gain of 10 dB at 235 GHz

NASA Technical Reports Server (NTRS)

Dawson, Douglas; Fung, King Man; Lee, Karen; Samoska, Lorene; Wells, Mary; Gaier, Todd; Kangaslahti, Pekka; Grundbacher, Ronald; Lai, Richard; Raja, Rohit;

The SPS interference problem-electronic system effects and mitigation techniques

NASA Technical Reports Server (NTRS)

Juroshek, J. R.

1980-01-01

The potential for interference between solar power satellites (SPS) and other Earth satellite operations was examined along with interference problems involving specific electronic devices. Conclusions indicate that interference is likely in the 2500 MHz to 2690 MHz direct broadcast satellite band adjacent to SPS. Estimates of the adjacent channel noise from SPS in this band are as high as -124 dBc/4 kHz and -100 dBc/MHz, where dBc represents decibels relative to the total power in the fundamental. A second potential problem is the 7350 MHz, 3d harmonic from SPS that falls within the 7300 MHz to 7450 MHz space to Earth, government, satellite assignment. Catastrophic failures can be produced in integrated circuits when the microwave power levels coupled into inputs and power leads reach 1 to 100 watts. The failures are typically due to bonding wire melting, metallization failures, and junction shorting. Nondestructive interaction or interference, however, generally occurs with coupled power levels of the order of 10 milliwatts. This integration is due to the rectification of microwave energy by the numerous pn junctions within these circuits.

Experimental characterization of a bi-dimensional array of negative capacitance piezo-patches for vibroacoustic control

NASA Astrophysics Data System (ADS)

Tateo, F.; Collet, M.; Ouisse, M.; Ichchou, M. N.; Cunefare, K. A.

2013-04-01

A recent technological revolution in the fields of integrated MEMS has finally rendered possible the mechanical integration of active smart materials, electronics and power supply systems for the next generation of smart composite structures. Using a bi-dimensional array of electromechanical transducers, composed by piezo-patches connected to a synthetic negative capacitance, it is possible to modify the dynamics of the underlying structure. In this study, we present an application of the Floquet-Bloch theorem for vibroacoustic power flow optimization, by means of distributed shunted piezoelectric material. In the context of periodically distributed damped 2D mechanical systems, this numerical approach allows one to compute the multi-modal waves dispersion curves into the entire first Brillouin zone. This approach also permits optimization of the piezoelectric shunting electrical impedance, which controls energy diffusion into the proposed semi-active distributed set of cells. Furthermore, we present experimental evidence that proves the effectiveness of the proposed control method. The experiment requires a rectangular metallic plate equipped with seventy-five piezo-patches, controlled independently by electronic circuits. More specifically, the out-of-plane displacements and the averaged kinetic energy of the controlled plate are compared in two different cases (open-circuit and controlled circuit). The resulting data clearly show how this proposed technique is able to damp and selectively reflect the incident waves.

19 CFR 10.14 - Fabricated components subject to the exemption.

Code of Federal Regulations, 2010 CFR

2010-04-01

... assembled, such as transistors, diodes, integrated circuits, machinery parts, or precut parts of wearing..., or integrated circuit wafers containing individual integrated circuit dice which have been scribed or... resulted in a substantial transformation of the foreign copper ingots. Example 2. An integrated circuit...

Heavy-Ion Microbeam Fault Injection into SRAM-Based FPGA Implementations of Cryptographic Circuits

NASA Astrophysics Data System (ADS)

Li, Huiyun; Du, Guanghua; Shao, Cuiping; Dai, Liang; Xu, Guoqing; Guo, Jinlong

2015-06-01

Transistors hit by heavy ions may conduct transiently, thereby introducing transient logic errors. Attackers can exploit these abnormal behaviors and extract sensitive information from the electronic devices. This paper demonstrates an ion irradiation fault injection attack experiment into a cryptographic field-programmable gate-array (FPGA) circuit. The experiment proved that the commercial FPGA chip is vulnerable to low-linear energy transfer carbon irradiation, and the attack can cause the leakage of secret key bits. A statistical model is established to estimate the possibility of an effective fault injection attack on cryptographic integrated circuits. The model incorporates the effects from temporal, spatial, and logical probability of an effective attack on the cryptographic circuits. The rate of successful attack calculated from the model conforms well to the experimental results. This quantitative success rate model can help evaluate security risk for designers as well as for the third-party assessment organizations.

Silicon-based silicon–germanium–tin heterostructure photonics

PubMed Central

Soref, Richard

2014-01-01

The wavelength range that extends from 1550 to 5000 nm is a new regime of operation for Si-based photonic and opto-electronic integrated circuits. To actualize the new chips, heterostructure active devices employing the ternary SiGeSn alloy are proposed in this paper. Foundry-based monolithic integration is described. Opportunities and challenges abound in creating laser diodes, optical amplifiers, light-emitting diodes, photodetectors, modulators, switches and a host of high-performance passive infrared waveguided components. PMID:24567479

Mechanically Flexible and High-Performance CMOS Logic Circuits.

PubMed

Honda, Wataru; Arie, Takayuki; Akita, Seiji; Takei, Kuniharu

2015-10-13

Low-power flexible logic circuits are key components required by the next generation of flexible electronic devices. For stable device operation, such components require a high degree of mechanical flexibility and reliability. Here, the mechanical properties of low-power flexible complementary metal-oxide-semiconductor (CMOS) logic circuits including inverter, NAND, and NOR are investigated. To fabricate CMOS circuits on flexible polyimide substrates, carbon nanotube (CNT) network films are used for p-type transistors, whereas amorphous InGaZnO films are used for the n-type transistors. The power consumption and voltage gain of CMOS inverters are <500 pW/mm at Vin = 0 V (<7.5 nW/mm at Vin = 5 V) and >45, respectively. Importantly, bending of the substrate is not found to cause significant changes in the device characteristics. This is also observed to be the case for more complex flexible NAND and NOR logic circuits for bending states with a curvature radius of 2.6 mm. The mechanical stability of these CMOS logic circuits makes them ideal candidates for use in flexible integrated devices.

Mechanically Flexible and High-Performance CMOS Logic Circuits

PubMed Central

Honda, Wataru; Arie, Takayuki; Akita, Seiji; Takei, Kuniharu

2015-01-01

Low-power flexible logic circuits are key components required by the next generation of flexible electronic devices. For stable device operation, such components require a high degree of mechanical flexibility and reliability. Here, the mechanical properties of low-power flexible complementary metal–oxide–semiconductor (CMOS) logic circuits including inverter, NAND, and NOR are investigated. To fabricate CMOS circuits on flexible polyimide substrates, carbon nanotube (CNT) network films are used for p-type transistors, whereas amorphous InGaZnO films are used for the n-type transistors. The power consumption and voltage gain of CMOS inverters are <500 pW/mm at Vin = 0 V (<7.5 nW/mm at Vin = 5 V) and >45, respectively. Importantly, bending of the substrate is not found to cause significant changes in the device characteristics. This is also observed to be the case for more complex flexible NAND and NOR logic circuits for bending states with a curvature radius of 2.6 mm. The mechanical stability of these CMOS logic circuits makes them ideal candidates for use in flexible integrated devices. PMID:26459882

Triple Hybrid Energy Harvesting Interface Electronics

NASA Astrophysics Data System (ADS)

Uluşan, H.; Chamanian, S.; Pathirana, W. M. P. R.; Zorlu, Ö.; Muhtaroğlu, A.; Külah, H.

2016-11-01

This study presents a novel triple hybrid system that combines simultaneously generated power from thermoelectric (TE), vibration-based electromagnetic (EM) and piezoelectric (PZT) harvesters for a relatively high power supply capability. In the proposed solution each harvesting source utilizes a distinct power management circuit that generates a DC voltage suitable for combining the three parallel supplies. The circuits are designed and implemented in 180 nm standard CMOS technology, and are terminated with a schottky diode to avoid reverse current flow. The harvested AC signal from the EM harvester is rectified with a self-powered AC-DC doubler, which utilizes active diode structures to minimize the forward- bias voltage drop. The PZT interface electronics utilizes a negative voltage converter as the first stage, followed by synchronous power extraction and DC-to-DC conversion through internal switches, and an external inductor. The ultra-low voltage DC power harvested by the TE generator is stepped up through a charge-pump driven by an LC oscillator with fully- integrated center-tapped differential inductors. Test results indicate that hybrid energy harvesting circuit provides more than 1 V output for load resistances higher than 100 kΩ (10 μW) where the stand-alone harvesting circuits are not able to reach 1 V output. This is the first hybrid harvester circuit that simultaneously extracts energy from three independent sources, and delivers a single DC output.

Equivalent circuit modeling of a piezo-patch energy harvester on a thin plate with AC-DC conversion

NASA Astrophysics Data System (ADS)

Bayik, B.; Aghakhani, A.; Basdogan, I.; Erturk, A.

2016-05-01

As an alternative to beam-like structures, piezoelectric patch-based energy harvesters attached to thin plates can be readily integrated to plate-like structures in automotive, marine, and aerospace applications, in order to directly exploit structural vibration modes of the host system without mass loading and volumetric occupancy of cantilever attachments. In this paper, a multi-mode equivalent circuit model of a piezo-patch energy harvester integrated to a thin plate is developed and coupled with a standard AC-DC conversion circuit. Equivalent circuit parameters are obtained in two different ways: (1) from the modal analysis solution of a distributed-parameter analytical model and (2) from the finite-element numerical model of the harvester by accounting for two-way coupling. After the analytical modeling effort, multi-mode equivalent circuit representation of the harvester is obtained via electronic circuit simulation software SPICE. Using the SPICE software, electromechanical response of the piezoelectric energy harvester connected to linear and nonlinear circuit elements are computed. Simulation results are validated for the standard AC-AC and AC-DC configurations. For the AC input-AC output problem, voltage frequency response functions are calculated for various resistive loads, and they show excellent agreement with modal analysis-based analytical closed-form solution and with the finite-element model. For the standard ideal AC input-DC output case, a full-wave rectifier and a smoothing capacitor are added to the harvester circuit for conversion of the AC voltage to a stable DC voltage, which is also validated against an existing solution by treating the single-mode plate dynamics as a single-degree-of-freedom system.

Beyond G-band : a 235 GHz InP MMIC amplifier

NASA Technical Reports Server (NTRS)

Dawson, Douglas; Samoska, Lorene; Fung, A. K.; Lee, Karen; Lai, Richard; Grundbacher, Ronald; Liu, Po-Hsin; Raja, Rohit

2005-01-01

We present results on an InP monolithic millimeter- wave integrated circuit (MMIC) amplifier having 10-dB gain at 235 GHz. We designed this circuit and fabricated the chip in Northrop Grumman Space Technology's (NGST) 0.07- m InP high electron mobility transistor (HEMT) process. Using a WR3 (220-325 GHz) waveguide vector network analyzer system interfaced to waveguide wafer probes, we measured this chip on-wafer for -parameters. To our knowledge, this is the first time a WR3 waveguide on-wafer measurement system has been used to measure gain in a MMIC amplifier above 230 GHz.

Self-assembled Nanomaterials for Hybrid Electronic and Photonic Systems

DTIC Science & Technology

2015-05-15

storage media.  Project 3. Self‐assembling Circuit Defect Modeling The self‐assembly of  nanoelectronic  devices provide an opportunity to achieve... nanoelectronics . This work will be useful in predicting the potential success of defect‐ tolerance techniques for DNA self‐assembled  nanoelectronic  substrates...program with integrated circuit emphasis simulations for DNA self-assembled nanoelectronics ." IET Computers and Digital Techniques 3, no. 6 (2009): 553-569.        

Personal electronics printing via tapping mode composite liquid metal ink delivery and adhesion mechanism

NASA Astrophysics Data System (ADS)

Zheng, Yi; He, Zhi-Zhu; Yang, Jun; Liu, Jing

2014-04-01

Printed electronics is becoming increasingly important in a variety of newly emerging areas. However, restricted to the rather limited conductive inks and available printing strategies, the current electronics manufacture is usually confined to industry level. Here, we show a highly cost-effective and entirely automatic printing way towards personal electronics making, through introducing a tapping-mode composite fluid delivery system. Fundamental mechanisms regarding the reliable printing, transfer and adhesion of the liquid metal inks on the substrate were disclosed through systematic theoretical interpretation and experimental measurements. With this liquid metal printer, a series of representative electronic patterns spanning from single wires to desired complex configurations such as integrated circuit (IC), printed-circuits-on-board (PCB), electronic paintings, or more do-it-yourself (DIY) devices, were demonstrated to be printed out with high precision in a moment. And the total machine cost already reached personally affordable price. This is hard to achieve by a conventional PCB technology which generally takes long time and is material, water and energy consuming, while the existing printed electronics is still far away from the real direct printing goal. The present work opens the way for large scale personal electronics manufacture and is expected to generate important value for the coming society.

Personal electronics printing via tapping mode composite liquid metal ink delivery and adhesion mechanism.

PubMed

Zheng, Yi; He, Zhi-Zhu; Yang, Jun; Liu, Jing

2014-04-04

Printed electronics is becoming increasingly important in a variety of newly emerging areas. However, restricted to the rather limited conductive inks and available printing strategies, the current electronics manufacture is usually confined to industry level. Here, we show a highly cost-effective and entirely automatic printing way towards personal electronics making, through introducing a tapping-mode composite fluid delivery system. Fundamental mechanisms regarding the reliable printing, transfer and adhesion of the liquid metal inks on the substrate were disclosed through systematic theoretical interpretation and experimental measurements. With this liquid metal printer, a series of representative electronic patterns spanning from single wires to desired complex configurations such as integrated circuit (IC), printed-circuits-on-board (PCB), electronic paintings, or more do-it-yourself (DIY) devices, were demonstrated to be printed out with high precision in a moment. And the total machine cost already reached personally affordable price. This is hard to achieve by a conventional PCB technology which generally takes long time and is material, water and energy consuming, while the existing printed electronics is still far away from the real direct printing goal. The present work opens the way for large scale personal electronics manufacture and is expected to generate important value for the coming society.

Personal electronics printing via tapping mode composite liquid metal ink delivery and adhesion mechanism

PubMed Central

Zheng, Yi; He, Zhi-Zhu; Yang, Jun; Liu, Jing

2014-01-01

Printed electronics is becoming increasingly important in a variety of newly emerging areas. However, restricted to the rather limited conductive inks and available printing strategies, the current electronics manufacture is usually confined to industry level. Here, we show a highly cost-effective and entirely automatic printing way towards personal electronics making, through introducing a tapping-mode composite fluid delivery system. Fundamental mechanisms regarding the reliable printing, transfer and adhesion of the liquid metal inks on the substrate were disclosed through systematic theoretical interpretation and experimental measurements. With this liquid metal printer, a series of representative electronic patterns spanning from single wires to desired complex configurations such as integrated circuit (IC), printed-circuits-on-board (PCB), electronic paintings, or more do-it-yourself (DIY) devices, were demonstrated to be printed out with high precision in a moment. And the total machine cost already reached personally affordable price. This is hard to achieve by a conventional PCB technology which generally takes long time and is material, water and energy consuming, while the existing printed electronics is still far away from the real direct printing goal. The present work opens the way for large scale personal electronics manufacture and is expected to generate important value for the coming society. PMID:24699375

The physics of a single-event upset in integrated circuits: A review and critique of analytical models for charge collection

NASA Technical Reports Server (NTRS)

Vonroos, O.; Zoutendyk, J.

1983-01-01

When an energetic particle (kinetic energy 0.5 MeV) originating from a radioactive decay or a cosmic ray transverse the active regions of semiconductor devices used in integrated circuit (IC) chips, it leaves along its track a high density electron hole plasma. The subsequent decay of this plasma by drift and diffusion leads to charge collection at the electrodes large enough in most cases to engender a false reading, hence the name single-event upset (SEU). The problem of SEU's is particularly severe within the harsh environment of Jupiter's radiation belts and constitutes therefore a matter of concern for the Galileo mission. The physics of an SEU event is analyzed in some detail. Owing to the predominance of nonlinear space charge effects and the fact that positive (holes) and negative (electrons) charges must be treated on an equal footing, analytical models for the ionized-charge collection and their corresponding currents as a function of time prove to be inadequate even in the simplest case of uniformly doped, abrupt p-n junctions in a one-dimensional geometry. The necessity for full-fledged computer simulation of the pertinent equations governing the electron-hole plasma therefore becomes imperative.

Two color interferometric electron density measurement in an axially blown arc

NASA Astrophysics Data System (ADS)

Stoller, Patrick; Carstensen, Jan; Galletti, Bernardo; Doiron, Charles; Sokolov, Alexey; Salzmann, René; Simon, Sandor; Jabs, Philipp

2016-09-01

High voltage circuit breakers protect the power grid by interrupting the current in case of a short circuit. To do so an arc is ignited between two contacts as they separate; transonic gas flow is used to cool and ultimately extinguish the arc at a current-zero crossing of the alternating current. A detailed understanding of the arc interruption process is needed to improve circuit breaker design. The conductivity of the partially ionized gas remaining after the current-zero crossing, a key parameter in determining whether the arc will be interrupted or not, is a function of the electron density. The electron density, in turn, is a function of the detailed dynamics of the arc cooling process, which does not necessarily occur under local thermodynamic equilibrium (LTE) conditions. In this work, we measure the spatially resolved line-integrated index of refraction in a near-current-zero arc stabilized in an axial flow of synthetic air with two nanosecond pulsed lasers at wavelengths of 532 nm and 671 nm. Generating a stable, cylindrically symmetric arc enables us to determine the three-dimensional index of refraction distribution using Abel inversion. Due to the wavelength dependence of the component of the index of refraction related to the free electrons, the information at two different wavelengths can be used to determine the electron density. This information allows us to determine how important it is to take into account non-equilibrium effects for accurate modeling of the physics of decaying arcs.

A novel pixellated solid-state photon detector for enhancing the Everhart-Thornley detector.

PubMed

Chuah, Joon Huang; Holburn, David

2013-06-01

This article presents a pixellated solid-state photon detector designed specifically to improve certain aspects of the existing Everhart-Thornley detector. The photon detector was constructed and fabricated in an Austriamicrosystems 0.35 µm complementary metal-oxide-semiconductor process technology. This integrated circuit consists of an array of high-responsivity photodiodes coupled to corresponding low-noise transimpedance amplifiers, a selector-combiner circuit and a variable-gain postamplifier. Simulated and experimental results show that the photon detector can achieve a maximum transimpedance gain of 170 dBΩ and minimum bandwidth of 3.6 MHz. It is able to detect signals with optical power as low as 10 nW and produces a minimum signal-to-noise ratio (SNR) of 24 dB regardless of gain configuration. The detector has been proven to be able to effectively select and combine signals from different pixels. The key advantages of this detector are smaller dimensions, higher cost effectiveness, lower voltage and power requirements and better integration. The photon detector supports pixel-selection configurability which may improve overall SNR and also potentially generate images for different analyses. This work has contributed to the future research of system-level integration of a pixellated solid-state detector for secondary electron detection in the scanning electron microscope. Copyright © 2013 Wiley Periodicals, Inc.

System-Level Integrated Circuit (SLIC) Technology Development for Phased Array Antenna Applications

NASA Technical Reports Server (NTRS)

Windyka, John A.; Zablocki, Ed G.

1997-01-01

This report documents the efforts and progress in developing a 'system-level' integrated circuit, or SLIC, for application in advanced phased array antenna systems. The SLIC combines radio-frequency (RF) microelectronics, digital and analog support circuitry, and photonic interfaces into a single micro-hybrid assembly. Together, these technologies provide not only the amplitude and phase control necessary for electronic beam steering in the phased array, but also add thermally-compensated automatic gain control, health and status feedback, bias regulation, and reduced interconnect complexity. All circuitry is integrated into a compact, multilayer structure configured for use as a two-by-four element phased array module, operating at 20 Gigahertz, using a Microwave High-Density Interconnect (MHDI) process. The resultant hardware is constructed without conventional wirebonds, maintains tight inter-element spacing, and leads toward low-cost mass production. The measured performances and development issues associated with both the two-by-four element module and the constituent elements are presented. Additionally, a section of the report describes alternative architectures and applications supported by the SLIC electronics. Test results show excellent yield and performance of RF circuitry and full automatic gain control for multiple, independent channels. Digital control function, while suffering from lower manufacturing yield, also proved successful.

Poly-4-vinylphenol (PVP) and Poly(melamine-co-formaldehyde) (PMF)-Based Atomic Switching Device and Its Application to Logic Gate Circuits with Low Operating Voltage.

PubMed

Kang, Dong-Ho; Choi, Woo-Young; Woo, Hyunsuk; Jang, Sungkyu; Park, Hyung-Youl; Shim, Jaewoo; Choi, Jae-Woong; Kim, Sungho; Jeon, Sanghun; Lee, Sungjoo; Park, Jin-Hong

2017-08-16

In this study, we demonstrate a high-performance solid polymer electrolyte (SPE) atomic switching device with low SET/RESET voltages (0.25 and -0.5 V, respectively), high on/off-current ratio (10 5 ), excellent cyclic endurance (>10 3 ), and long retention time (>10 4 s), where poly-4-vinylphenol (PVP)/poly(melamine-co-formaldehyde) (PMF) is used as an SPE layer. To accomplish these excellent device performance parameters, we reduce the off-current level of the PVP/PMF atomic switching device by improving the electrical insulating property of the PVP/PMF electrolyte through adjustment of the number of cross-linked chains. We then apply a titanium buffer layer to the PVP/PMF switching device for further improvement of bipolar switching behavior and device stability. In addition, we first implement SPE atomic switch-based logic AND and OR circuits with low operating voltages below 2 V by integrating 5 × 5 arrays of PVP/PMF switching devices on the flexible substrate. In particular, this low operating voltage of our logic circuits was much lower than that (>5 V) of the circuits configured by polymer resistive random access memory. This research successfully presents the feasibility of PVP/PMF atomic switches for flexible integrated circuits for next-generation electronic applications.

Foldable graphene electronic circuits based on paper substrates.

PubMed

Hyun, Woo Jin; Park, O Ok; Chin, Byung Doo

2013-09-14

Graphene electronic circuits are prepared on paper substrates by using graphene nanoplates and applied to foldable paper-based electronics. The graphene circuits show a small change in conductance under various folding angles and maintain an electronic path on paper substrates after repetition of folding and unfolding. Foldable paper-based applications with graphene circuits exhibit excellent folding stability. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Microfluidic stretchable RF electronics.

PubMed

Cheng, Shi; Wu, Zhigang

2010-12-07

Stretchable electronics is a revolutionary technology that will potentially create a world of radically different electronic devices and systems that open up an entirely new spectrum of possibilities. This article proposes a microfluidic based solution for stretchable radio frequency (RF) electronics, using hybrid integration of active circuits assembled on flex foils and liquid alloy passive structures embedded in elastic substrates, e.g. polydimethylsiloxane (PDMS). This concept was employed to implement a 900 MHz stretchable RF radiation sensor, consisting of a large area elastic antenna and a cluster of conventional rigid components for RF power detection. The integrated radiation sensor except the power supply was fully embedded in a thin elastomeric substrate. Good electrical performance of the standalone stretchable antenna as well as the RF power detection sub-module was verified by experiments. The sensor successfully detected the RF radiation over 5 m distance in the system demonstration. Experiments on two-dimensional (2D) stretching up to 15%, folding and twisting of the demonstrated sensor were also carried out. Despite the integrated device was severely deformed, no failure in RF radiation sensing was observed in the tests. This technique illuminates a promising route of realizing stretchable and foldable large area integrated RF electronics that are of great interest to a variety of applications like wearable computing, health monitoring, medical diagnostics, and curvilinear electronics.

An Electronic-Nose Sensor Node Based on a Polymer-Coated Surface Acoustic Wave Array for Wireless Sensor Network Applications

PubMed Central

Tang, Kea-Tiong; Li, Cheng-Han; Chiu, Shih-Wen

2011-01-01

This study developed an electronic-nose sensor node based on a polymer-coated surface acoustic wave (SAW) sensor array. The sensor node comprised an SAW sensor array, a frequency readout circuit, and an Octopus II wireless module. The sensor array was fabricated on a large K2 128° YX LiNbO3 sensing substrate. On the surface of this substrate, an interdigital transducer (IDT) was produced with a Cr/Au film as its metallic structure. A mixed-mode frequency readout application specific integrated circuit (ASIC) was fabricated using a TSMC 0.18 μm process. The ASIC output was connected to a wireless module to transmit sensor data to a base station for data storage and analysis. This sensor node is applicable for wireless sensor network (WSN) applications. PMID:22163865

An electronic-nose sensor node based on a polymer-coated surface acoustic wave array for wireless sensor network applications.

PubMed

Tang, Kea-Tiong; Li, Cheng-Han; Chiu, Shih-Wen

2011-01-01

This study developed an electronic-nose sensor node based on a polymer-coated surface acoustic wave (SAW) sensor array. The sensor node comprised an SAW sensor array, a frequency readout circuit, and an Octopus II wireless module. The sensor array was fabricated on a large K(2) 128° YX LiNbO3 sensing substrate. On the surface of this substrate, an interdigital transducer (IDT) was produced with a Cr/Au film as its metallic structure. A mixed-mode frequency readout application specific integrated circuit (ASIC) was fabricated using a TSMC 0.18 μm process. The ASIC output was connected to a wireless module to transmit sensor data to a base station for data storage and analysis. This sensor node is applicable for wireless sensor network (WSN) applications.

The PLA at Home and Abroad: Assessing the Operational Capabilities of China’s Military

DTIC Science & Technology

2010-06-01

The RMA has now come to mean the fun- damental changes that have taken place, in the words of the Pentagon 1999 Annual Report to the President and...engineering and had further training at the automobile works in Moscow; he was also China’s Minister of Electronic Industries in the early 1980s...disruptive innovations are most likely to occur; that is, in C4ISR systems, ad- vanced electronic components, high-end integrated circuits, next

MIMIC-compatible GaAs and InP field effect controlled transferred electron (FECTED) oscillators

NASA Astrophysics Data System (ADS)

Scheiber, Helmut; Luebke, Kurt; Diskus, Christian G.; Thim, Hartwig W.; Gruetzmacher, D.

1989-12-01

A MIMIC-(millimeter and microwave integrated circuit) compatible transferred electron oscillator is investigated which utilizes the frequency-independent negative resistance of the stationary charge dipole domain that forms in the channel of a MESFET. The device structure, analysis, and simulation are described. Devices fabricated from GaAs and InP exhibit very high power levels of 56 mW at 29 GHz and 55 mW at 34 GHz, respectively. Continuous wave power levels are somewhat lower (30 mW).

Electron Induced Conductivity of Al2O3 as Pertaining to Thermionic Integrated Circuits.

DTIC Science & Technology

1985-12-01

No.6, pp. 4450-4456, December 1983. 18. Pomerantz, M. A., Shatas, R. A. and Marshall, 3. F., "Electrical Conductivity Induced in MgO Crystals by 1.3...Experiments were conducted to measure the electron induced conductivity CEIC) of single crystal sapphire (A120 ) and poly-crystalline alumina (A1203 ). The...induced conductivity (EIC) of single crystal sapphire (A li2O-) and poly-crystalline alumina (Alzz2O. The EIC is generated when the samples are bombarded

Command, Control, Communications, Computers and Intelligence Electronic Warfare (C4IEW) Project Book, Fiscal Year 1994. (Non-FOUO Version)

DTIC Science & Technology

1994-04-01

TSW-7A, AIR TRAFFIC CONTROL CENTRAL (ATCC) 32- 8 AN/TTC-41(V), CENTRAL OFFICE, TELEPHONE, AUTOMATIC 32- 9 MISSILE COUNTERMEASURE DEVICE (MCD) .- 0 MK...a Handheld Terminal Unit (HTU), Portable Computer Unit (PCU), Transportable Computer Unit (TCU), and compatible NOI peripheral devices . All but the...CLASSIFICATION: ASARC-III, Jun 80, Standard. I I I AN/TIC-39 IS A MOBILE , AUTOMATIC , MODULAR ELECTRONIC CIRCUIT SWITCH UNDER PROCESSOR CONTROL WITH INTEGRAL

An investigation of nonuniform dose deposition from an electron beam

NASA Astrophysics Data System (ADS)

Lilley, William; Luu, Kieu X.

1994-08-01

In a search for an explanation of nonuniform electron-beam dose deposition, the integrated tiger series (ITS) of coupled electron/photon Monte Carlo transport codes was used to calculate energy deposition in the package materials of an application-specific integrated circuit (ASIC) while the thicknesses of some of the materials were varied. The thicknesses of three materials that were in the path of an electron-beam pulse were varied independently so that analysis could determine how the radiation dose measurements using thermoluminescent dosimeters (TLD's) would be affected. The three materials were chosen because they could vary during insertion of the die into the package or during the process of taking dose measurements. The materials were aluminum, HIPEC (a plastic), and silver epoxy. The calculations showed that with very small variations in thickness, the silver epoxy had a large effect on the dose uniformity over the area of the die.

Paper-based piezoelectric touch pads with hydrothermally grown zinc oxide nanowires.

PubMed

Li, Xiao; Wang, Yu-Hsuan; Zhao, Chen; Liu, Xinyu

2014-12-24

This paper describes a new type of paper-based piezoelectric touch pad integrating zinc oxide nanowires (ZnO NWs), which can serve as user interfaces in paper-based electronics. The sensing functionality of these touch pads is enabled by the piezoelectric property of ZnO NWs grown on paper using a simple, cost-efficient hydrothermal method. A piece of ZnO-NW paper with two screen-printed silver electrodes forms a touch button, and touch-induced electric charges from the button are converted into a voltage output using a charge amplifier circuit. A touch pad consisting of an array of buttons can be readily integrated into paper-based electronic devices, allowing user input of information for various purposes such as programming, identification checking, and gaming. This novel design features ease of fabrication, low cost, ultrathin structure, and good compatibility with techniques in printed electronics, and further enriches the available technologies of paper-based electronics.

Experimental validation of wireless communication with chaos.

PubMed

Ren, Hai-Peng; Bai, Chao; Liu, Jian; Baptista, Murilo S; Grebogi, Celso

2016-08-01

The constraints of a wireless physical media, such as multi-path propagation and complex ambient noises, prevent information from being communicated at low bit error rate. Surprisingly, it has only recently been shown that, from a theoretical perspective, chaotic signals are optimal for communication. It maximises the receiver signal-to-noise performance, consequently minimizing the bit error rate. This work demonstrates numerically and experimentally that chaotic systems can in fact be used to create a reliable and efficient wireless communication system. Toward this goal, we propose an impulsive control method to generate chaotic wave signals that encode arbitrary binary information signals and an integration logic together with the match filter capable of decreasing the noise effect over a wireless channel. The experimental validation is conducted by inputting the signals generated by an electronic transmitting circuit to an electronic circuit that emulates a wireless channel, where the signals travel along three different paths. The output signal is decoded by an electronic receiver, after passing through a match filter.