Concept and design of a beam blanker with integrated photoconductive switch for ultrafast electron microscopy.

PubMed

Weppelman, I G C; Moerland, R J; Hoogenboom, J P; Kruit, P

2018-01-01

We present a new method to create ultrashort electron pulses by integrating a photoconductive switch with an electrostatic deflector. This paper discusses the feasibility of such a system by analytical and numerical calculations. We argue that ultrafast electron pulses can be achieved for micrometer scale dimensions of the blanker, which are feasible with MEMS-based fabrication technology. According to basic models, the design presented in this paper is capable of generating 100 fs electron pulses with spatial resolutions of less than 10 nm. Our concept for an ultrafast beam blanker (UFB) may provide an attractive alternative to perform ultrafast electron microscopy, as it does not require modification of the microscope nor realignment between DC and pulsed mode of operation. Moreover, only low laser pulse energies are required. Due to its small dimensions the UFB can be inserted in the beam line of a commercial microscope via standard entry ports for blankers or variable apertures. The use of a photoconductive switch ensures minimal jitter between laser and electron pulses. Copyright © 2017 Elsevier B.V. All rights reserved.

Metal vapor arc switch electromagnetic accelerator technology

NASA Technical Reports Server (NTRS)

Mongeau, P. P.

1984-01-01

A multielectrode device housed in an insulator vacuum vessel, the metal vapor vacuum switch has high power capability and can hold off voltages up to the 100 kilovolt level. Such switches can be electronically triggered and can interrupt or commutate at a zero current crossing. The physics of arc initiation, arc conduction, and interruption are examined, including material considerations; inefficiencies; arc modes; magnetic field effects; passive and forced extinction; and voltage recovery. Heating, electrode lifetime, device configuration, and external circuit configuration are discussed. The metal vapor vacuum switch is compared with SCRs, GTOs, spark gaps, ignitrons, and mechanical breakers.

TECHNOLOGY AND MANPOWER IN THE TELEPHONE INDUSTRY, 1965-75.

ERIC Educational Resources Information Center

LUSKIN, SHELDON H.; AND OTHERS

ELECTRONIC SOLID STATE SWITCHING SYSTEMS, COMMUNICATIONS SATELLITES, SEMIAUTOMATIC INFORMATION SERVICES, AUTOMATIC INTERCEPTING AND DATA PROCESSING, AND DEDICATED PLANT, THE PERMANENT ASSIGNMENT OF LINES FROM A CENTRAL OFFICE TO EACH ACTUAL AND POTENTIAL SUBSCRIBER, ARE SOME OF THE TECHNOLOGICAL INNOVATIONS WHICH WILL BRING SIGNIFICANT MANPOWER…

Design of a Multicast Optical Packet Switch Based on Fiber Bragg Grating Technology for Future Networks

NASA Astrophysics Data System (ADS)

Cheng, Yuh-Jiuh; Yeh, Tzuoh-Chyau; Cheng, Shyr-Yuan

2011-09-01

In this paper, a non-blocking multicast optical packet switch based on fiber Bragg grating technology with optical output buffers is proposed. Only the header of optical packets is converted to electronic signals to control the fiber Bragg grating array of input ports and the packet payloads should be transparently destined to their output ports so that the proposed switch can reduce electronic interfaces as well as the bit rate. The modulation and the format of packet payloads may be non-standard where packet payloads could also include different wavelengths for increasing the volume of traffic. The advantage is obvious: the proposed switch could transport various types of traffic. An easily implemented architecture which can provide multicast services is also presented. An optical output buffer is designed to queue the packets if more than one incoming packet should reach to the same destination output port or including any waiting packets in optical output buffer that will be sent to the output port at a time slot. For preserving service-packet sequencing and fairness of routing sequence, a priority scheme and a round-robin algorithm are adopted at the optical output buffer. The fiber Bragg grating arrays for both input ports and output ports are designed for routing incoming packets using optical code division multiple access technology.

Free electron lasers driven by linear induction accelerators: High power radiation sources

NASA Technical Reports Server (NTRS)

Orzechowski, T. J.

1989-01-01

The technology of Free Electron Lasers (FELs) and linear induction accelerators (LIAs) is addressed by outlining the following topics: fundamentals of FELs; basic concepts of linear induction accelerators; the Electron Laser Facility (a microwave FEL); PALADIN (an infrared FEL); magnetic switching; IMP; and future directions (relativistic klystrons). This presentation is represented by viewgraphs only.

A Telecommunications Primer for College Presidents. Part I. The Technologies Defined. Educational Technology Profile 25.

ERIC Educational Resources Information Center

Smith, Ralph Lee

1978-01-01

Intended for use by presidents, planners, and administrators to acquaint them with developments in electronic communications, this primer describes cable television, common carrier, videotape recorders and videodiscs, satellites, microwave, circuit integration, digital transmission, data packet switching, and fiber optics. (LBH)

History and modern applications of nano-composite materials carrying GA/cm2 current density due to a Bose-Einstein Condensate at room temperature produced by Focused Electron Beam Induced Processing for many extraordinary novel technical applications

NASA Astrophysics Data System (ADS)

Koops, Hans W. P.

2015-12-01

The discovery of Focused Electron Beam Induced Processing and early applications of this technology led to the possible use of a novel nanogranular material “Koops-GranMat®” using Pt/C and Au/C material. which carries at room temperature a current density > 50 times the current density which high TC superconductors can carry. The explanation for the characteristics of this novel material is given. This fact allows producing novel products for many applications using Dual Beam system having a gas supply and X.Y.T stream data programming and not using GDSII layout pattern control software. Novel products are possible for energy transportation. -distribution.-switching, photon-detection above 65 meV energy for very efficient energy harvesting, for bright field emission electron sources used for vacuum electronic devices like amplifiers for HF electronics, micro-tubes, 30 GHz to 6 THz switching amplifiers with signal to noise ratio >10(!), THz power sources up to 1 Watt, in combination with miniaturized vacuum pumps, vacuum gauges, IR to THz detectors, EUV- and X-Ray sources. Since focusing electron beam induced deposition works also at low energy, selfcloning multibeam-production machines for field emitter lamps, displays, multi-beam - lithography, - imaging, and - inspection, energy harvesting, and power distribution with switches controlling field-emitter arrays for KA of currents but with < 100 V switching voltage are possible. Finally the replacement of HTC superconductors and its applications by the Koops-GranMat® having Koops-Pairs at room temperature will allow the investigation devices similar to Josephson Junctions and its applications now called QUIDART (Quantum interference devices at Room Temperature). All these possibilities will support a revolution in the optical, electric, power, and electronic technology.

Teaching Power Electronics with a Design-Oriented, Project-Based Learning Method at the Technical University of Denmark

ERIC Educational Resources Information Center

Zhang, Zhe; Hansen, Claus Thorp; Andersen, Michael A. E.

2016-01-01

Power electronics is a fast-developing technology within the electrical engineering field. This paper presents the results and experiences gained from applying design-oriented project-based learning to switch-mode power supply design in a power electronics course at the Technical University of Denmark (DTU). Project-based learning (PBL) is known…

Internet Technology--Going beyond Google

ERIC Educational Resources Information Center

Warger, Tom

2006-01-01

Over the past dozen years, the switch from paper to electronic sources of information has been all encompassing. How can technology support the efforts of scholars to find and evaluate information? General-purpose search engines use an obscure mix of advanced algorithms to index, search, match, and rank results. Metasearch software extends the…

Mechanical Computing Redux: Limitations at the Nanoscale

NASA Astrophysics Data System (ADS)

Liu, Tsu-Jae King

2014-03-01

Technology solutions for overcoming the energy efficiency limits of nanoscale complementary metal oxide semiconductor (CMOS) technology ultimately will be needed in order to address the growing issue of integrated-circuit chip power density. Off-state leakage current sets a fundamental lower limit in energy per operation for any voltage-level-based digital logic implemented with transistors (CMOS and beyond), which leads to practical limits for device density (i.e. cost) and operating frequency (i.e. system performance). Mechanical switches have zero off-state leakag and hence can overcome this fundamental limit. Contact adhesive force sets a lower limit for the switching energy of a mechanical switch, however, and also directly impacts its performance. This paper will review recent progress toward the development of nano-electro-mechanical relay technology and discuss remaining challenges for realizing the promise of mechanical computing for ultra-low-power computing. Supported by the Center for Energy Efficient Electronics Science (NSF Award 0939514).

Three-terminal resistive switching memory in a transparent vertical-configuration device

NASA Astrophysics Data System (ADS)

Ungureanu, Mariana; Llopis, Roger; Casanova, Fèlix; Hueso, Luis E.

2014-01-01

The resistive switching phenomenon has attracted much attention recently for memory applications. It describes the reversible change in the resistance of a dielectric between two non-volatile states by the application of electrical pulses. Typical resistive switching memories are two-terminal devices formed by an oxide layer placed between two metal electrodes. Here, we report on the fabrication and operation of a three-terminal resistive switching memory that works as a reconfigurable logic component and offers an increased logic density on chip. The three-terminal memory device we present is transparent and could be further incorporated in transparent computing electronic technologies.

Position-sensitive radiation monitoring (surface contamination monitor). Innovative technology summary report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Not Available

1999-06-01

The Shonka Research Associates, Inc. Position-Sensitive Radiation Monitor both detects surface radiation and prepares electronic survey map/survey report of surveyed area automatically. The electronically recorded map can be downloaded to a personal computer for review and a map/report can be generated for inclusion in work packages. Switching from beta-gamma detection to alpha detection is relatively simple and entails moving a switch position to alpha and adjusting the voltage level to an alpha detection level. No field calibration is required when switching from beta-gamma to alpha detection. The system can be used for free-release surveys because it meets the federal detectionmore » level sensitivity limits requires for surface survey instrumentation. This technology is superior to traditionally-used floor contamination monitor (FCM) and hand-held survey instrumentation because it can precisely register locations of radioactivity and accurately correlate contamination levels to specific locations. Additionally, it can collect and store continuous radiological data in database format, which can be used to produce real-time imagery as well as automated graphics of survey data. Its flexible design can accommodate a variety of detectors. The cost of the innovative technology is 13% to 57% lower than traditional methods. This technology is suited for radiological surveys of flat surfaces at US Department of Energy (DOE) nuclear facility decontamination and decommissioning (D and D) sites or similar public or commercial sites.« less

Mapper: high throughput maskless lithography

NASA Astrophysics Data System (ADS)

Kuiper, V.; Kampherbeek, B. J.; Wieland, M. J.; de Boer, G.; ten Berge, G. F.; Boers, J.; Jager, R.; van de Peut, T.; Peijster, J. J. M.; Slot, E.; Steenbrink, S. W. H. K.; Teepen, T. F.; van Veen, A. H. V.

2009-01-01

Maskless electron beam lithography, or electron beam direct write, has been around for a long time in the semiconductor industry and was pioneered from the mid-1960s onwards. This technique has been used for mask writing applications as well as device engineering and in some cases chip manufacturing. However because of its relatively low throughput compared to optical lithography, electron beam lithography has never been the mainstream lithography technology. To extend optical lithography double patterning, as a bridging technology, and EUV lithography are currently explored. Irrespective of the technical viability of both approaches, one thing seems clear. They will be expensive [1]. MAPPER Lithography is developing a maskless lithography technology based on massively-parallel electron-beam writing with high speed optical data transport for switching the electron beams. In this way optical columns can be made with a throughput of 10-20 wafers per hour. By clustering several of these columns together high throughputs can be realized in a small footprint. This enables a highly cost-competitive alternative to double patterning and EUV alternatives. In 2007 MAPPER obtained its Proof of Lithography milestone by exposing in its Demonstrator 45 nm half pitch structures with 110 electron beams in parallel, where all the beams where individually switched on and off [2]. In 2008 MAPPER has taken a next step in its development by building several tools. A new platform has been designed and built which contains a 300 mm wafer stage, a wafer handler and an electron beam column with 110 parallel electron beams. This manuscript describes the first patterning results with this 300 mm platform.

Research in pulsed power plasma physics

NASA Astrophysics Data System (ADS)

Hinshelwood, David; Rose, David

1993-11-01

The research was conducted in support of light-ion-driven inertial confinement fusion (ICF) for the Department of Energy (DOE), and nuclear weapon effects simulation (NWES) for the Defense Nuclear Agency (DNA). Accomplishments related to ion beams include: development of a practical backup approach to ion beam transport; the first studies of ion-beam interaction with a neutral gas; initial investigations of a promising industrial application of ion beam technology; and detailed theoretical evaluation of several different ion beam transport schemes. Major accomplishments relating to opening switches include: the first direct measurement of the electron density in an opening switch; detailed studies of switch conduction-time scaling; evaluation of several different switch plasma sources; and extensive studies of switch performance into diode loads, leading to the development of a new (and now generally accepted) model of switch behavior.

Two-Phase Thermal Switching System for a Small, Extended Duration Lunar Science Platform

NASA Technical Reports Server (NTRS)

Bugby, D.; Farmer, J.; OConnor, B.; Wirzburger, M.; Abel, E.; Stouffer, C.

2010-01-01

Issue: extended duration lunar science platforms, using solar/battery or radioisotope power, require thermal switching systems that: a) Provide efficient cooling during the 15-earth-day 390 K lunar day; b) Consume minimal power during the 15-earth-day 100 K lunar night. Objective: carry out an analytical study of thermal switching systems that can meet the thermal requirements of: a) International Lunar Network (ILN) anchor node mission - primary focus; b) Other missions such as polar crater landers. ILN Anchor Nodes: network of geophysical science platforms to better understand the interior structure/composition of the moon: a) Rationale: no data since Apollo seismic stations ceased operation in 1977; b) Anchor Nodes: small, low-power, long-life (6-yr) landers with seismographic and a few other science instruments (see next chart); c) WEB: warm electronics box houses ILN anchor node electronics/batteries. Technology Need: thermal switching system that will keep the WEB cool during the lunar day and warm during the lunar night.

Feasibility and limitations of anti-fuses based on bistable non-volatile switches for power electronic applications

NASA Astrophysics Data System (ADS)

Erlbacher, T.; Huerner, A.; Bauer, A. J.; Frey, L.

2012-09-01

Anti-fuse devices based on non-volatile memory cells and suitable for power electronic applications are demonstrated for the first time using silicon technology. These devices may be applied as stand alone devices or integrated using standard junction-isolation into application-specific and smart-power integrated circuits. The on-resistance of such devices can be permanently switched by nine orders of magnitude by triggering the anti-fuse with a positive voltage pulse. Extrapolation of measurement data and 2D TCAD process and device simulations indicate that 20 A anti-fuses with 10 mΩ can be reliably fabricated in 0.35 μm technology with a footprint of 2.5 mm2. Moreover, this concept offers distinguished added-values compared to existing mechanical relays, e.g. pre-test, temporary and permanent reset functions, gradual turn-on mode, non-volatility, and extendibility to high voltage capability.

Electron emission from ferroelectrics - a review

NASA Astrophysics Data System (ADS)

Riege, H.

1994-02-01

The strong pulsed emission of electrons from the surface of ferroelectric (FE) materials was discovered at CERN in 1987. Since then many aspects and properties of the method of generation and propagation of electron beams from FE have been studied experimentally. The method is based on macroscopic charge separation and self-emission of electrons under the influence of their own space-charge fields. Hence, this type of emission is not limited by the Langmuir-Child law as are conventional emission methods. Charge separation and electron emission can be achieved by rapid switching of the spontaneous, ferroelectric polarization. Polarization switching may be induced by application of electrical-field or mechanical-pressure pulses, as well as by thermal heating or laser illumination of the ferroelectric emitter. At higher emission intensities plasma formation assists the FE emission and leads to a strong growth of emitted current amplitude, which is no longer limited by the FE material and the surface properties. The most attractive features of FE emission are robustness and ease of manipulation of the emitter cathodes which can be transported through atmospheric air and used without any problems in vacuum, low-pressure gas or plasma environments. Large-area arrangements of multiple emitters, switched in interleaved mode, can produce electron beams of any shape, current amplitude or time structure. The successful application of FE emission in accelerator technology has been demonstrated experimentally in several cases, e.g. for triggering high-power gas switches, for photocathodes in electron guns, and for electron-beam generators intended to generate, neutralize and enhance ion beams in ion sources and ion linacs. Other applications can be envisaged in microwave power generators and in the fields of electronics and vacuum microelectronics.

Extreme nonlinear terahertz electro-optics in diamond for ultrafast pulse switching

NASA Astrophysics Data System (ADS)

Shalaby, Mostafa; Vicario, Carlo; Hauri, Christoph P.

2017-03-01

Polarization switching of picosecond laser pulses is a fundamental concept in signal processing [C. Chen and G. Liu, Annu. Rev. Mater. Sci. 16, 203 (1986); V. R. Almeida et al., Nature 431, 1081 (2004); and A. A. P. Pohl et al., Photonics Sens. 3, 1 (2013)]. Conventional switching devices rely on the electro-optical Pockels effect and work at radio frequencies. The ensuing gating time of several nanoseconds is a bottleneck for faster switches which is set by the performance of state-of-the-art high-voltage electronics. Here we show that by substituting the electric field of several kV/cm provided by modern electronics by the MV/cm field of a single-cycle THz laser pulse, the electro-optical gating process can be driven orders of magnitude faster, at THz frequencies. In this context, we introduce diamond as an exceptional electro-optical material and demonstrate a pulse gating time as fast as 100 fs using sub-cycle THz-induced Kerr nonlinearity. We show that THz-induced switching in the insulator diamond is fully governed by the THz pulse shape. The presented THz-based electro-optical approach overcomes the bandwidth and switching speed limits of conventional MHz/GHz electronics and establishes the ultrafast electro-optical gating technology for the first time in the THz frequency range. We finally show that the presented THz polarization gating technique is applicable for advanced beam diagnostics. As a first example, we demonstrate tomographic reconstruction of a THz pulse in three dimensions.

Non-switching to switching transferring mechanism investigation for Ag/SiO x /p-Si structure with SiO x deposited by HWCVD

NASA Astrophysics Data System (ADS)

Liu, Yanhong; Wang, Ruoying; Li, Zhongyue; Wang, Song; Huang, Yang; Peng, Wei

2018-04-01

We proposed and fabricated an Ag/SiO x /p-Si sandwich structure, in which amorphous SiO x films were deposited through hot wire chemical vapor deposition (HWCVD) using tetraethylorthosilicate (TEOS) as Si and O precursor. Experimental results indicate that the I–V properties of this structure transfer from non-switching to switching operation as the SiO x deposition temperature increased. The device with SiO x deposited at high deposition temperature exhibits typical bipolar switching properties, which can be potentially used in resistive switching random accessible memory (RRAM). The transferring mechanism from non-switching to switching can be ascribed to the change of structural and electronic properties of SiO x active layer deposited at different temperatures, as evidenced by analyzing FTIR spectrum and fitting its I–V characteristics curves. This work demonstrates a safe and practicable low-temperature device-grade SiO x film deposition technology by conducting HWCVD from TEOS.

Nanoelectromechanical digital logic circuits using curved cantilever switches with amorphous-carbon-coated contacts

NASA Astrophysics Data System (ADS)

Ayala, Christopher L.; Grogg, Daniel; Bazigos, Antonios; Bleiker, Simon J.; Fernandez-Bolaños, Montserrat; Niklaus, Frank; Hagleitner, Christoph

2015-11-01

Nanoelectromechanical (NEM) switches have the potential to complement or replace traditional CMOS transistors in the area of ultra-low-power digital electronics. This paper reports the demonstration of prototype circuits including the first 3-stage ring oscillator built using cell-level digital logic elements based on curved NEM switches. The ring oscillator core occupies an area of 30 μm × 10 μm using 6 NEM switches. Each NEM switch device has a footprint of 5 μm × 3 μm, an air gap of 60 μm and is coated with amorphous carbon (a-C) for reliable operation. The ring oscillator operates at a frequency of 6.7 MHz, and confirms the simulated inverter propagation delay of 25 ns. The successful fabrication and measurement of this demonstrator are key milestones on the way towards an optimized, scaled technology with sub-nanosecond switching times, lower operating voltages and VLSI implementation.

Electronic control circuits: A compilation

NASA Technical Reports Server (NTRS)

1973-01-01

A compilation of technical R and D information on circuits and modular subassemblies is presented as a part of a technology utilization program. Fundamental design principles and applications are given. Electronic control circuits discussed include: anti-noise circuit; ground protection device for bioinstrumentation; temperature compensation for operational amplifiers; hybrid gatling capacitor; automatic signal range control; integrated clock-switching control; and precision voltage tolerance detector.

47 CFR 32.6212 - Digital electronic switching expense.

Code of Federal Regulations, 2014 CFR

2014-10-01

... with digital electronic switching equipment used to provide circuit switching. (c) This subaccount 6212... 47 Telecommunication 2 2014-10-01 2014-10-01 false Digital electronic switching expense. 32.6212... Digital electronic switching expense. (a) This account shall include expenses associated with digital...

47 CFR 32.6212 - Digital electronic switching expense.

Code of Federal Regulations, 2011 CFR

2011-10-01

... with digital electronic switching equipment used to provide circuit switching. (c) This subaccount 6212... 47 Telecommunication 2 2011-10-01 2011-10-01 false Digital electronic switching expense. 32.6212... Digital electronic switching expense. (a) This account shall include expenses associated with digital...

47 CFR 32.6212 - Digital electronic switching expense.

Code of Federal Regulations, 2013 CFR

2013-10-01

... with digital electronic switching equipment used to provide circuit switching. (c) This subaccount 6212... 47 Telecommunication 2 2013-10-01 2013-10-01 false Digital electronic switching expense. 32.6212... Digital electronic switching expense. (a) This account shall include expenses associated with digital...

47 CFR 32.6212 - Digital electronic switching expense.

Code of Federal Regulations, 2010 CFR

2010-10-01

... with digital electronic switching equipment used to provide circuit switching. (c) This subaccount 6212... 47 Telecommunication 2 2010-10-01 2010-10-01 false Digital electronic switching expense. 32.6212... Digital electronic switching expense. (a) This account shall include expenses associated with digital...

47 CFR 32.6212 - Digital electronic switching expense.

Code of Federal Regulations, 2012 CFR

2012-10-01

... with digital electronic switching equipment used to provide circuit switching. (c) This subaccount 6212... 47 Telecommunication 2 2012-10-01 2012-10-01 false Digital electronic switching expense. 32.6212... Digital electronic switching expense. (a) This account shall include expenses associated with digital...

Charge Catastrophe and Dielectric Breakdown During Exposure of Organic Thin Films to Low-Energy Electron Radiation

NASA Astrophysics Data System (ADS)

Thete, A.; Geelen, D.; van der Molen, S. J.; Tromp, R. M.

2017-12-01

The effects of exposure to ionizing radiation are central in many areas of science and technology, including medicine and biology. Absorption of UV and soft-x-ray photons releases photoelectrons, followed by a cascade of lower energy secondary electrons with energies down to 0 eV. While these low energy electrons give rise to most chemical and physical changes, their interactions with soft materials are not well studied or understood. Here, we use a low energy electron microscope to expose thin organic resist films to electrons in the range 0-50 eV, and to analyze the energy distribution of electrons returned to the vacuum. We observe surface charging that depends strongly and nonlinearly on electron energy and electron beam current, abruptly switching sign during exposure. Charging can even be sufficiently severe to induce dielectric breakdown across the film. We provide a simple but comprehensive theoretical description of these phenomena, identifying the presence of a cusp catastrophe to explain the sudden switching phenomena seen in the experiments. Surprisingly, the films undergo changes at all incident electron energies, starting at ˜0 eV .

Multiple switching modes and multiple level states in memristive devices

NASA Astrophysics Data System (ADS)

Miao, Feng; Yang, J. Joshua; Borghetti, Julien; Strachan, John Paul; Zhang, M.-X.; Goldfarb, Ilan; Medeiros-Ribeiro, Gilberto; Williams, R. Stanley

2011-03-01

As one of the most promising technologies for next generation non-volatile memory, metal oxide based memristive devices have demonstrated great advantages on scalability, operating speed and power consumption. Here we report the observation of multiple switching modes and multiple level states in different memristive systems. The multiple switching modes can be obtained by limiting the current during electroforming, and related transport behaviors, including ionic and electronic motions, are characterized. Such observation can be rationalized by a model of two effective switching layers adjacent to the bottom and top electrodes. Multiple level states, corresponding to different composition of the conducting channel, will also be discussed in the context of multiple-level storage for high density, non-volatile memory applications.

Layered memristive and memcapacitive switches for printable electronics

NASA Astrophysics Data System (ADS)

Bessonov, Alexander A.; Kirikova, Marina N.; Petukhov, Dmitrii I.; Allen, Mark; Ryhänen, Tapani; Bailey, Marc J. A.

2015-02-01

Novel computing technologies that imitate the principles of biological neural systems may offer low power consumption along with distinct cognitive and learning advantages. The development of reliable memristive devices capable of storing multiple states of information has opened up new applications such as neuromorphic circuits and adaptive systems. At the same time, the explosive growth of the printed electronics industry has expedited the search for advanced memory materials suitable for manufacturing flexible devices. Here, we demonstrate that solution-processed MoOx/MoS2 and WOx/WS2 heterostructures sandwiched between two printed silver electrodes exhibit an unprecedentedly large and tunable electrical resistance range from 102 to 108 Ω combined with low programming voltages of 0.1-0.2 V. The bipolar resistive switching, with a concurrent capacitive contribution, is governed by an ultrathin (<3 nm) oxide layer. With strong nonlinearity in switching dynamics, different mechanisms of synaptic plasticity are implemented by applying a sequence of electrical pulses.

47 CFR 32.2212 - Digital electronic switching.

Code of Federal Regulations, 2012 CFR

2012-10-01

... shall include the original cost of digital electronic switching equipment used to provide circuit... electronic switching equipment used to provide both circuit and packet switching shall be recorded in the... 47 Telecommunication 2 2012-10-01 2012-10-01 false Digital electronic switching. 32.2212 Section...

47 CFR 32.2212 - Digital electronic switching.

Code of Federal Regulations, 2014 CFR

2014-10-01

... shall include the original cost of digital electronic switching equipment used to provide circuit... electronic switching equipment used to provide both circuit and packet switching shall be recorded in the... 47 Telecommunication 2 2014-10-01 2014-10-01 false Digital electronic switching. 32.2212 Section...

47 CFR 32.2212 - Digital electronic switching.

Code of Federal Regulations, 2011 CFR

2011-10-01

... shall include the original cost of digital electronic switching equipment used to provide circuit... electronic switching equipment used to provide both circuit and packet switching shall be recorded in the... 47 Telecommunication 2 2011-10-01 2011-10-01 false Digital electronic switching. 32.2212 Section...

47 CFR 32.2212 - Digital electronic switching.

Code of Federal Regulations, 2010 CFR

2010-10-01

... shall include the original cost of digital electronic switching equipment used to provide circuit... electronic switching equipment used to provide both circuit and packet switching shall be recorded in the... 47 Telecommunication 2 2010-10-01 2010-10-01 false Digital electronic switching. 32.2212 Section...

47 CFR 32.2212 - Digital electronic switching.

Code of Federal Regulations, 2013 CFR

2013-10-01

... shall include the original cost of digital electronic switching equipment used to provide circuit... electronic switching equipment used to provide both circuit and packet switching shall be recorded in the... 47 Telecommunication 2 2013-10-01 2013-10-01 false Digital electronic switching. 32.2212 Section...

Large optical 3D MEMS switches in access networks

NASA Astrophysics Data System (ADS)

Madamopoulos, Nicholas; Kaman, Volkan; Yuan, Shifu; Jerphagnon, Olivier; Helkey, Roger; Bowers, John E.

2007-09-01

Interest is high among residential customers and businesses for advanced, broadband services such as fast Internet access, electronic commerce, video-on-demand, digital broadcasting, teleconferencing and telemedicine. In order to satisfy such growing demand of end-customers, access technologies such as fiber-to-the-home/building (FTTH/B) are increasingly being deployed. Carriers can reduce maintenance costs, minimize technology obsolescence and introduce new services easily by reducing active elements in the fiber access network. However, having a passive optical network (PON) also introduces operational and maintenance challenges. Increased diagnostic monitoring capability of the network becomes a necessity as more and more fibers are provisioned to deliver services to the end-customers. This paper demonstrates the clear advantages that large 3D optical MEMS switches offer in solving these access network problems. The advantages in preventative maintenance, remote monitoring, test and diagnostic capability are highlighted. The low optical insertion loss for all switch optical connections of the switch enables the monitoring, grooming and serving of a large number of PON lines and customers. Furthermore, the 3D MEMS switch is transparent to optical wavelengths and data formats, thus making it easy to incorporate future upgrades, such higher bit rates or DWDM overlay to a PON.

Power SEMICONDUCTORS—STATE of Art and Future Trends

NASA Astrophysics Data System (ADS)

Benda, Vitezslav

2011-06-01

The importance of effective energy conversion control, including power generation from renewable and environmentally clean energy sources, increases due to rising energy demand. Power electronic systems for controlling and converting electrical energy have become the workhorse of modern society in many applications, both in industry and at home. Power electronics plays a very important role in traction and can be considered as brawns of robotics and automated manufacturing systems. Power semiconductor devices are the key electronic components used in power electronic systems. Advances in power semiconductor technology have improved the efficiency, size, weight and cost of power electronic systems. At present, IGCTs, IGBTs, and MOSFETs represent modern switching devices. Power integrated circuits (PIC) have been developed for the use of power converters for portable, automotive and aerospace applications. For advanced applications, new materials (SiC and GaN) have been introduced. This paper reviews the state of these devices and elaborates on their potentials in terms of higher voltages, higher power density, and better switching performance.

Design of power electronics for TVC EMA systems

NASA Technical Reports Server (NTRS)

Nelms, R. Mark

1993-01-01

The Composite Development Division of the Propulsion Laboratory at Marshall Space Flight Center (MSFC) is currently developing a class of electromechanical actuators (EMA's) for use in space transportation applications such as thrust vector control (TVC) and propellant control valves (PCV). These high power servomechanisms will require rugged, reliable, and compact power electronic modules capable of modulating several hundred amperes of current at up to 270 volts. MSFC has selected the brushless dc motor for implementation in EMA's. This report presents the results of an investigation into the applicability of two new technologies, MOS-controlled thyristors (MCT's) and pulse density modulation (PDM), to the control of brushless dc motors in EMA systems. MCT's are new power semiconductor devices, which combine the high voltage and current capabilities of conventional thyristors and the low gate drive requirements of metal oxide semiconductor field effect transistors (MOSFET's). The commanded signals in a PDM system are synthesized using a series of sinusoidal pulses instead of a series of square pulses as in a pulse width modulation (PWM) system. A resonant dc link inverter is employed to generate the sinusoidal pulses in the PDM system. This inverter permits zero-voltage switching of all semiconductors which reduces switching losses and switching stresses. The objectives of this project are to develop and validate an analytical model of the MCT device when used in high power motor control applications and to design, fabricate, and test a prototype electronic circuit employing both MCT and PDM technology for controlling a brushless dc motor.

Advanced Electrical Materials and Components Being Developed

NASA Technical Reports Server (NTRS)

Schwarze, Gene E.

2004-01-01

All aerospace systems require power management and distribution (PMAD) between the energy and power source and the loads. The PMAD subsystem can be broadly described as the conditioning and control of unregulated power from the energy source and its transmission to a power bus for distribution to the intended loads. All power and control circuits for PMAD require electrical components for switching, energy storage, voltage-to-current transformation, filtering, regulation, protection, and isolation. Advanced electrical materials and component development technology is a key technology to increasing the power density, efficiency, reliability, and operating temperature of the PMAD. The primary means to develop advanced electrical components is to develop new and/or significantly improved electronic materials for capacitors, magnetic components, and semiconductor switches and diodes. The next important step is to develop the processing techniques to fabricate electrical and electronic components that exceed the specifications of presently available state-of-the-art components. The NASA Glenn Research Center's advanced electrical materials and component development technology task is focused on the following three areas: 1) New and/or improved dielectric materials for the development of power capacitors with increased capacitance volumetric efficiency, energy density, and operating temperature; 2) New and/or improved high-frequency, high-temperature soft magnetic materials for the development of transformers and inductors with increased power density, energy density, electrical efficiency, and operating temperature; 3) Packaged high-temperature, high-power density, high-voltage, and low-loss SiC diodes and switches.

Southwest Research Institute assistance to NASA in biomedical areas of the technology utilization program

NASA Technical Reports Server (NTRS)

1972-01-01

The problem statements presented relate mostly to research on prosthetic equipment and means of attaching biomedical and electronic devices to the human body. A patent application for a reliable switching element in a patient assist control units is also described.

The development of technology for growing InAs/GaSb superlattices by MOCVD

NASA Astrophysics Data System (ADS)

Fedorov, I. V.; Levin, R. V.; Nevedomsky, V. N.

2018-03-01

This study is dedicated to developing the technology for growing InAs/GaSb superlattices (SLs) by MOCVD. The structures were studied by transmission electron microscopy (TEM) and photoluminescence (PL) methods. We concluded that hetero-interface sharpness is not affected by the pause time between growth stages for separate layers or by switching the layer direction. A possible interpretation for the spectra of SLs was suggested.

EASCON '88; Proceedings of the Twenty-first Annual Electronics and Aerospace Conference, Arlington, VA, Nov. 9-11, 1988

NASA Astrophysics Data System (ADS)

The capabilities of present and future space and terrestrial communication systems are examined in reviews and reports. Topics addressed include competition between space and terrestrial technologies, remote sensing, carrier services in public switched telephone networks, surveillance and warning systems, telescience and telerobotics, integrated networks and systems, and military communication systems. Consideration is given to navigation and geolocation services; high-definition TV broadcasting; technical, economic, marketing, and strategic aspects of VSATs; future technology drivers; and SDI technologies.

Investigation of noise insensitive electronic circuits for automotive applications with particular regard to MOS circuits

NASA Astrophysics Data System (ADS)

Gorille, I.

1980-11-01

The application of MOS switching circuits of high complexity in essential automobile systems, such as ignition and injection, was investigated. A bipolar circuit technology, current hogging logic (CHL), was compared to MOS technologies for its competitiveness. The functional requirements of digital automotive systems can only be met by technologies allowing large packing densities and medium speeds. The properties of n-MOS and CMOS are promising whereas the electrical power needed by p-MOS circuits is in general prohibitively large.

The future of memory

NASA Astrophysics Data System (ADS)

Marinella, M.

In the not too distant future, the traditional memory and storage hierarchy of may be replaced by a single Storage Class Memory (SCM) device integrated on or near the logic processor. Traditional magnetic hard drives, NAND flash, DRAM, and higher level caches (L2 and up) will be replaced with a single high performance memory device. The Storage Class Memory paradigm will require high speed (< 100 ns read/write), excellent endurance (> 1012), nonvolatility (retention > 10 years), and low switching energies (< 10 pJ per switch). The International Technology Roadmap for Semiconductors (ITRS) has recently evaluated several potential candidates SCM technologies, including Resistive (or Redox) RAM, Spin Torque Transfer RAM (STT-MRAM), and phase change memory (PCM). All of these devices show potential well beyond that of current flash technologies and research efforts are underway to improve the endurance, write speeds, and scalabilities to be on-par with DRAM. This progress has interesting implications for space electronics: each of these emerging device technologies show excellent resistance to the types of radiation typically found in space applications. Commercially developed, high density storage class memory-based systems may include a memory that is physically radiation hard, and suitable for space applications without major shielding efforts. This paper reviews the Storage Class Memory concept, emerging memory devices, and possible applicability to radiation hardened electronics for space.

Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching

NASA Astrophysics Data System (ADS)

Cho, Seungho; Yun, Chao; Tappertzhofen, Stefan; Kursumovic, Ahmed; Lee, Shinbuhm; Lu, Ping; Jia, Quanxi; Fan, Meng; Jian, Jie; Wang, Haiyan; Hofmann, Stephan; MacManus-Driscoll, Judith L.

2016-08-01

Resistive switches are non-volatile memory cells based on nano-ionic redox processes that offer energy efficient device architectures and open pathways to neuromorphics and cognitive computing. However, channel formation typically requires an irreversible, not well controlled electroforming process, giving difficulty to independently control ionic and electronic properties. The device performance is also limited by the incomplete understanding of the underlying mechanisms. Here, we report a novel memristive model material system based on self-assembled Sm-doped CeO2 and SrTiO3 films that allow the separate tailoring of nanoscale ionic and electronic channels at high density (~1012 inch-2). We systematically show that these devices allow precise engineering of the resistance states, thus enabling large on-off ratios and high reproducibility. The tunable structure presents an ideal platform to explore ionic and electronic mechanisms and we expect a wide potential impact also on other nascent technologies, ranging from ionic gating to micro-solid oxide fuel cells and neuromorphics.

Smart home design for electronic devices monitoring based wireless gateway network using cisco packet tracer

NASA Astrophysics Data System (ADS)

Sihombing, Oloan; Zendrato, Niskarto; Laia, Yonata; Nababan, Marlince; Sitanggang, Delima; Purba, Windania; Batubara, Diarmansyah; Aisyah, Siti; Indra, Evta; Siregar, Saut

2018-04-01

In the era of technological development today, the technology has become the need for the life of today's society. One is needed to create a smart home in turning on and off electronic devices via smartphone. So far in turning off and turning the home electronic device is done by pressing the switch or remote button, so in control of electronic device control less effective. The home smart design is done by simulation concept by testing system, network configuration, and wireless home gateway computer network equipment required by a smart home network on cisco packet tracer using Internet Thing (IoT) control. In testing the IoT home network wireless network gateway system, multiple electronic devices can be controlled and monitored via smartphone based on predefined configuration conditions. With the Smart Ho me can potentially increase energy efficiency, decrease energy usage costs, control electronics and change the role of residents.

Three-Dimensionally Printed Micro-electromechanical Switches.

PubMed

Lee, Yongwoo; Han, Jungmin; Choi, Bongsik; Yoon, Jinsu; Park, Jinhee; Kim, Yeamin; Lee, Jieun; Kim, Dae Hwan; Kim, Dong Myong; Lim, Meehyun; Kang, Min-Ho; Kim, Sungho; Choi, Sung-Jin

2018-05-09

Three-dimensional (3D) printers have attracted considerable attention from both industry and academia and especially in recent years because of their ability to overcome the limitations of two-dimensional (2D) processes and to enable large-scale facile integration techniques. With 3D printing technologies, complex structures can be created using only a computer-aided design file as a reference; consequently, complex shapes can be manufactured in a single step with little dependence on manufacturer technologies. In this work, we provide a first demonstration of the facile and time-saving 3D printing of two-terminal micro-electromechanical (MEM) switches. Two widely used thermoplastic materials were used to form 3D-printed MEM switches; freely suspended and fixed electrodes were printed from conductive polylactic acid, and a water-soluble sacrificial layer for air-gap formation was printed from poly(vinyl alcohol). Our 3D-printed MEM switches exhibit excellent electromechanical properties, with abrupt switching characteristics and an excellent on/off current ratio value exceeding 10 6 . Therefore, we believe that our study makes an innovative contribution with implications for the development of a broader range of 3D printer applications (e.g., the manufacturing of various MEM devices and sensors), and the work highlights a uniquely attractive path toward the realization of 3D-printed electronics.

ENGINEERING TRADE-OFFS (ETO) INITIATIVE FOR REDUCTION IN MERCURY USE (SYSTEMS ANALYSIS BRANCH, SUSTAINABLE TECHNOLOGY DIVISION,NRMRL)

EPA Science Inventory

The demand for mercury in the United States is still growing or declining only slightly in a number of industrial sectors. These include electric lighting, electronic equipment, wiring devices and switches, measurement and control instruments, dental equipment and supplies, labor...

3-DIMENSIONAL Optoelectronic

NASA Astrophysics Data System (ADS)

Krishnamoorthy, Ashok Venketaraman

This thesis covers the design, analysis, optimization, and implementation of optoelectronic (N,M,F) networks. (N,M,F) networks are generic space-division networks that are well suited to implementation using optoelectronic integrated circuits and free-space optical interconnects. An (N,M,F) networks consists of N input channels each having a fanout F_{rm o}, M output channels each having a fanin F_{rm i}, and Log_{rm K}(N/F) stages of K x K switches. The functionality of the fanout, switching, and fanin stages depends on the specific application. Three applications of optoelectronic (N,M,F) networks are considered. The first is an optoelectronic (N,1,1) content -addressable memory system that achieves associative recall on two-dimensional images retrieved from a parallel-access optical memory. The design and simulation of the associative memory are discussed, and an experimental emulation of a prototype system using images from a parallel-readout optical disk is presented. The system design provides superior performance to existing electronic content-addressable memory chips in terms of capacity and search rate, and uses readily available optical disk and VLSI technologies. Next, a scalable optoelectronic (N,M,F) neural network that uses free-space holographic optical interconnects is presented. The neural architecture minimizes the number of optical transmitters needed, and provides accurate electronic fanin with low signal skew, and dendritic-type fan-in processing capability in a compact layout. Optimal data-encoding methods and circuit techniques are discussed. The implementation of an prototype optoelectronic neural system, and its application to a simple recognition task is demonstrated. Finally, the design, analysis, and optimization of a (N,N,F) self-routing, packet-switched multistage interconnection network is described. The network is suitable for parallel computing and broadband switching applications. The tradeoff between optical and electronic interconnects is examined quantitatively by varying the electronic switch size K. The performance of the (N,N,F) network versus the fanning parameter F, is also analyzed. It is shown that the optoelectronic (N,N,F) networks provide a range of performance-cost alternatives, and offer superior performance-per-cost to fully electronic switching networks and to previous networks designs.

Digital SPC switching technology: Foreign technology assessment

NASA Astrophysics Data System (ADS)

Fischman, Kurt; Jorstad, Norman D.

1990-12-01

This paper provides a foreign technology assessment of digital switching technology. Leading suppliers of digital switching technology are identified; although the United States holds a large part of the market, major companies in France, Sweden, Japan, the U.K., and Germany are also important. These countries, along with Belgium and Canada, are the most innovative and technically advanced. A listing is provided of transfers of digital switching technology to non-COCOM countries through licensing and joint ventures which reflects the widespread dissemination of this technology. Detailed technical specifications are provided for selected digital switching systems worldwide. The report concludes that considering the degree to which the technology is in place, that control of digital switching technology may not be feasible.

Observation of Third-order Nonlinearities in Graphene Oxide Film at Telecommunication Wavelengths

DOE PAGES

Xu, Xiaochuan; Zheng, Xiaorui; He, Feng; ...

2017-08-29

All-optical switches have been considered as a promising solution to overcome the fundamental speed limit of the current electronic switches. However, the lack of a suitable third-order nonlinear material greatly hinders the development of this technology. Here in this paper we report the observation of ultrahigh third-order nonlinearity about 0.45 cm 2/GW in graphene oxide thin films at the telecommunication wavelength region, which is four orders of magnitude higher than that of single crystalline silicon. Besides, graphene oxide is water soluble and thus easy to process due to the existence of oxygen containing groups. These unique properties can potentially significantlymore » advance the performance of alloptical switches.« less

Observation of Third-order Nonlinearities in Graphene Oxide Film at Telecommunication Wavelengths

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Xiaochuan; Zheng, Xiaorui; He, Feng

All-optical switches have been considered as a promising solution to overcome the fundamental speed limit of the current electronic switches. However, the lack of a suitable third-order nonlinear material greatly hinders the development of this technology. Here in this paper we report the observation of ultrahigh third-order nonlinearity about 0.45 cm 2/GW in graphene oxide thin films at the telecommunication wavelength region, which is four orders of magnitude higher than that of single crystalline silicon. Besides, graphene oxide is water soluble and thus easy to process due to the existence of oxygen containing groups. These unique properties can potentially significantlymore » advance the performance of alloptical switches.« less

Power Electronic Semiconductor Materials for Automotive and Energy Saving Applications - SiC, GaN, Ga2O3, and Diamond.

PubMed

Wellmann, Peter J

2017-11-17

Power electronics belongs to the future key technologies in order to increase system efficiency as well as performance in automotive and energy saving applications. Silicon is the major material for electronic switches since decades. Advanced fabrication processes and sophisticated electronic device designs have optimized the silicon electronic device performance almost to their theoretical limit. Therefore, to increase the system performance, new materials that exhibit physical and chemical properties beyond silicon need to be explored. A number of wide bandgap semiconductors like silicon carbide, gallium nitride, gallium oxide, and diamond exhibit outstanding characteristics that may pave the way to new performance levels. The review will introduce these materials by (i) highlighting their properties, (ii) introducing the challenges in materials growth, and (iii) outlining limits that need innovation steps in materials processing to outperform current technologies.

Power Electronic Semiconductor Materials for Automotive and Energy Saving Applications – SiC, GaN, Ga2O3, and Diamond

PubMed Central

2017-01-01

Power electronics belongs to the future key technologies in order to increase system efficiency as well as performance in automotive and energy saving applications. Silicon is the major material for electronic switches since decades. Advanced fabrication processes and sophisticated electronic device designs have optimized the silicon electronic device performance almost to their theoretical limit. Therefore, to increase the system performance, new materials that exhibit physical and chemical properties beyond silicon need to be explored. A number of wide bandgap semiconductors like silicon carbide, gallium nitride, gallium oxide, and diamond exhibit outstanding characteristics that may pave the way to new performance levels. The review will introduce these materials by (i) highlighting their properties, (ii) introducing the challenges in materials growth, and (iii) outlining limits that need innovation steps in materials processing to outperform current technologies. PMID:29200530

Field-programmable logic devices with optical input-output.

PubMed

Szymanski, T H; Saint-Laurent, M; Tyan, V; Au, A; Supmonchai, B

2000-02-10

A field-programmable logic device (FPLD) with optical I/O is described. FPLD's with optical I/O can have their functionality specified in the field by means of downloading a control-bit stream and can be used in a wide range of applications, such as optical signal processing, optical image processing, and optical interconnects. Our device implements six state-of-the-art dynamically programmable logic arrays (PLA's) on a 2 mm x 2 mm die. The devices were fabricated through the Lucent Technologies-Advanced Research Projects Agency-Consortium for Optical and Optoelectronic Technologies in Computing (Lucent/ARPA/COOP) workshop by use of 0.5-microm complementary metal-oxide semiconductor-self-electro-optic device technology and were delivered in 1998. All devices are fully functional: The electronic data paths have been verified at 200 MHz, and optical tests are pending. The device has been programmed to implement a two-stage optical switching network with six 4 x 4 crossbar switches, which can realize more than 190 x 10(6) unique programmable input-output permutations. The same device scaled to a 2 cm x 2 cm substrate could support as many as 4000 optical I/O and 1 Tbit/s of optical I/O bandwidth and offer fully programmable digital functionality with approximately 110,000 programmable logic gates. The proposed optoelectronic FPLD is also ideally suited to realizing dense, statically reconfigurable crossbar switches. We describe an attractive application area for such devices: a rearrangeable three-stage optical switch for a wide-area-network backbone, switching 1000 traffic streams at the OC-48 data rate and supporting several terabits of traffic.

Electrically tunable transport and resistive switching in doped Ca2RuO4

NASA Astrophysics Data System (ADS)

Shen, Shida; Williamson, Morgan; Cao, Gang; Zhou, Jianshi; Goodenough, John; Tsoi, Maxim

We study electronic transport properties of Cr doped (2.5%) Mott insulator Ca2RuO4 where electric fields were previously found to induce an insulator-to-metal switching with potential industrial applications. In our experiments we observe a continuous reduction in the resistivity of Ca2RuO4 as a function of increasing electrical bias followed by an abrupt switching at higher biases. Interestingly, the observed switching is non-destructive and requires opposite bias polarities to switch from high-to-low and low-to-high resistance states. Combination of 2-, 3-, and 4-probe measurements provide a means to shed light on the origin of the switching and distinguish between its bulk and interfacial contributions. This work was supported in part by C-SPIN, one of six centers of STARnet, a Semiconductor Research Corporation program, sponsored by MARCO and DARPA, by NSF Grants DMR-1600057, DMR-1265162, and DMR-1122603, and by the King Abdullah University of Science and Technology (KAUST) Office of Sponsored Research (OSR) under Award No. OSR-2015-CRG4-2626.

Optical technologies for the Internet of Things era

NASA Astrophysics Data System (ADS)

Ji, Philip N.

2017-08-01

Internet of Things (IoT) is a network of interrelated physical objects that can collect and exchange data with one another through embedded electronics, software, sensors, over the Internet. It extends Internet connectivity beyond traditional networking devices to a diverse range of physical devices and everyday things that utilize embedded technologies to communicate and interact with the external environment. The IoT brings automation and efficiency improvement to everyday life, business, and society. Therefore IoT applications and market are growing rapidly. Contrary to common belief that IoT is only related to wireless technology, optical technologies actually play important roles in the growth of IoT and contribute to its advancement. Firstly, fiber optics provides the backbone for transporting large amount of data generated by IoT network in the core , metro and access networks, and in building or in the physical object. Secondly, optical switching technologies, including all-optical switching and hybrid optical-electrical switching, enable fast and high bandwidth routing in IoT data processing center. Thirdly, optical sensing and imaging delivers comprehensive information of multiple physical phenomena through monitoring various optical properties such as intensity, phase, wavelength, frequency, polarization, and spectral distribution. In particular, fiber optic sensor has the advantages of high sensitivity, low latency, and long distributed sensing range. It is also immune to electromagnetic interference, and can be implemented in harsh environment. In this paper, the architecture of IoT is described, and the optical technologies and their applications in the IoT networks are discussed with practical examples.

Ultrafast Modulation and Switching of Quantum-Well Lasers using Terahertz Fields

NASA Technical Reports Server (NTRS)

Ning, Cun-Zheng; Hughes, S.; Citrin, D.; Saini, Subhash (Technical Monitor)

1998-01-01

Modulation and switching of semiconductor lasers are important for laser-based information technology. Typically the speed of modulation and switching is limited by interband processes such as stimulated and spontaneous recombinations which occur on a nanosecond time scale. This is why the diode laser modulation has been restricted to tens of GHz. Modulation at higher speed is highly desirable as the information technology enters into the so-called tera-era. In this paper, we study the possibility of utilizing THz-field-induced plasma heating to modulate quantum-well lasers. This is a timely study since, with the advancement of THz solid-state sources and free-electron lasers, THz physics and related technology is currently coming out of its infancy. The investigation of interplaying THz and optical fields is also of intruiging fundamental interest. First, we introduce theoretical plasma heating results for the quantum-well optical amplifier in the presense of an intense half-cycle THz pulse. The heated carrier distributions are then utilized to calculate the THz-pulse-induced change in refractive index and gain profile. Since the electron-hole-plasma is heated using intraband transitions, we circumvent the usual complications due to an overall change in density, and the nonlinear recovery is governed solely by the carrier-LO-phonon interactions, typically 5 ps for a complete recovery. This procedure implies THz and sub-THz switching and recovery rates, respectively; using either gain modulation or index modulation. Plasma heating via steady-state THz fields is also studied. Finally, numerical simulation of a coupled set of equations to investigate the THz modulation based on a simplified model for quantum-well lasers is presented. Our results show that a semiconductor laser can be modulated at up to 1 THz with little distortion with a THz field amplitude at the order of a few kV/cm. Laser responses to a change in THz frequency will be shown. Constraints, practicalities, and applications will be discussed.

Circuit with a Switch for Charging a Battery in a Battery Capacitor Circuit

NASA Technical Reports Server (NTRS)

Stuart, Thomas A. (Inventor); Ashtiani, Cyrus N. (Inventor)

2008-01-01

A circuit for charging a battery combined with a capacitor includes a power supply adapted to be connected to the capacitor, and the battery. The circuit includes an electronic switch connected to the power supply. The electronic switch is responsive to switch between a conducting state to allow current and a non-conducting state to prevent current flow. The circuit includes a control device connected to the switch and is operable to generate a control signal to continuously switch the electronic switch between the conducting and non-conducting states to charge the battery.

Fabrication of a novel RF switch device with high performance using In0.4Ga0.6As MOSFET technology

NASA Astrophysics Data System (ADS)

Jiahui, Zhou; Hudong, Chang; Xufang, Zhang; Jingzhi, Yang; Guiming, Liu; Haiou, Li; Honggang, Liu

2016-02-01

A novel radio frequency (RF) switch device has been successfully fabricated using InGaAs metal-oxide-semiconductor field-effect transistor (MOSFET) technology. The device showed drain saturation currents of 250 mA/mm, a maximum transconductance of 370 mS/mm, a turn-on resistance of 0.72 mω·mm2 and a drain current on-off (Ion/Ioff) ratio of 1 × 106. The maximum handling power of on-state of 533 mW/mm and off-state of 3667 mW/mm is obtained. The proposed In0.4Ga0.6 As MOSFET RF switch showed an insertion loss of less than 1.8 dB and an isolation of better than 20 dB in the frequency range from 0.1 to 7.5 GHz. The lowest insertion loss and the highest isolation can reach 0.27 dB and more than 68 dB respectively. This study demonstrates that the InGaAs MOSFET technology has a great potential for RF switch application. Project supported by the National Natural Science Foundation of China (Nos. 61274077, 61474031), the Guangxi Natural Science Foundation (No. 2013GXNSFGA019003), the Guangxi Department of Education Project (No. 201202ZD041), the Guilin City Technology Bureau (Nos. 20120104-8, 20130107-4), the China Postdoctoral Science Foundation Funded Project (Nos. 2012M521127, 2013T60566), the National Basic Research Program of China (Nos. 2011CBA00605, 2010CB327501), the Innovation Project of GUET Graduate Education (Nos. GDYCSZ201448, GDYCSZ201449), the State key Laboratory of Electronic Thin Films and Integrated Devices, UESTC (No. KFJJ201205), and the Guilin City Science and Technology Development Project (Nos. 20130107-4, 20120104-8).

47 CFR 32.2211 - Non-digital switching.

Code of Federal Regulations, 2010 CFR

2010-10-01

... switching. (a) This account shall include: (1) Original cost of stored program control analog circuit-switching and associated equipment. (2) Cost of remote analog electronic circuit switches. (3) Original cost of non-electronic circuit-switching equipment such as Step-by-Step, Crossbar, and Other Electro...

47 CFR 32.2211 - Non-digital switching.

Code of Federal Regulations, 2013 CFR

2013-10-01

... switching. (a) This account shall include: (1) Original cost of stored program control analog circuit-switching and associated equipment. (2) Cost of remote analog electronic circuit switches. (3) Original cost of non-electronic circuit-switching equipment such as Step-by-Step, Crossbar, and Other Electro...

47 CFR 32.2211 - Non-digital switching.

Code of Federal Regulations, 2012 CFR

2012-10-01

... switching. (a) This account shall include: (1) Original cost of stored program control analog circuit-switching and associated equipment. (2) Cost of remote analog electronic circuit switches. (3) Original cost of non-electronic circuit-switching equipment such as Step-by-Step, Crossbar, and Other Electro...

47 CFR 32.2211 - Non-digital switching.

Code of Federal Regulations, 2011 CFR

2011-10-01

... switching. (a) This account shall include: (1) Original cost of stored program control analog circuit-switching and associated equipment. (2) Cost of remote analog electronic circuit switches. (3) Original cost of non-electronic circuit-switching equipment such as Step-by-Step, Crossbar, and Other Electro...

47 CFR 32.2211 - Non-digital switching.

Code of Federal Regulations, 2014 CFR

2014-10-01

... switching. (a) This account shall include: (1) Original cost of stored program control analog circuit-switching and associated equipment. (2) Cost of remote analog electronic circuit switches. (3) Original cost of non-electronic circuit-switching equipment such as Step-by-Step, Crossbar, and Other Electro...

Picosecond electric-field-induced threshold switching in phase-change materials [THz-induced threshold switching and crystallization of phase-change materials

DOE PAGES

Zalden, Peter; Shu, Michael J.; Chen, Frank; ...

2016-08-05

Many chalcogenide glasses undergo a breakdown in electronic resistance above a critical field strength. Known as threshold switching, this mechanism enables field-induced crystallization in emerging phase-change memory. Purely electronic as well as crystal nucleation assisted models have been employed to explain the electronic breakdown. Here, picosecond electric pulses are used to excite amorphous Ag 4In 3Sb 67Te 26. Field-dependent reversible changes in conductivity and pulse-driven crystallization are observed. The present results show that threshold switching can take place within the electric pulse on subpicosecond time scales—faster than crystals can nucleate. As a result, this supports purely electronic models of thresholdmore » switching and reveals potential applications as an ultrafast electronic switch.« less

Feasibility study of an integrated optic switching center. [satellite tracking application

NASA Technical Reports Server (NTRS)

1979-01-01

The design of a high data rate switching center for a satellite tracking station is discussed. The feasibility of a switching network using an integrated switching matrix is assessed. The preferred integrated optical switching scheme was found to be an electro-optic Bragg diffraction switch. To ascertain the advantages of the integrated optics switching center, its properties are compared to those of opto-electronic and to electronics switching networks.

Light-effect transistor (LET) with multiple independent gating controls for optical logic gates and optical amplification

NASA Astrophysics Data System (ADS)

Marmon, Jason; Rai, Satish; Wang, Kai; Zhou, Weilie; Zhang, Yong

The pathway for CMOS technology beyond the 5-nm technology node remains unclear for both physical and technological reasons. A new transistor paradigm is required. A LET (Marmon et. al., Front. Phys. 2016, 4, No. 8) offers electronic-optical hybridization at the component level, and is capable of continuing Moore's law to the quantum scale. A LET overcomes a FET's fabrication complexity, e.g., physical gate and doping, by employing optical gating and photoconductivity, while multiple independent, optical gates readily realize unique functionalities. We report LET device characteristics and novel digital and analog applications, such as optical logic gates and optical amplification. Prototype CdSe-nanowire-based LETs, incorporating an M-S-M structure, show output and transfer characteristics resembling advanced FETs, e.g., on/off ratios up to 106 with a source-drain voltage of 1.43V, gate-power of 260nW, and a subthreshold swing of 0.3nW/decade (excluding losses). A LET has potential for high-switching (THz) speeds and extremely low-switching energies (aJ) in the ballistic transport region. Our work offers new electronic-optical integration strategies for high speed and low energy computing approaches, which could potentially be extended to other materials and devices.

Picosecond Electric-Field-Induced Threshold Switching in Phase-Change Materials.

PubMed

Zalden, Peter; Shu, Michael J; Chen, Frank; Wu, Xiaoxi; Zhu, Yi; Wen, Haidan; Johnston, Scott; Shen, Zhi-Xun; Landreman, Patrick; Brongersma, Mark; Fong, Scott W; Wong, H-S Philip; Sher, Meng-Ju; Jost, Peter; Kaes, Matthias; Salinga, Martin; von Hoegen, Alexander; Wuttig, Matthias; Lindenberg, Aaron M

2016-08-05

Many chalcogenide glasses undergo a breakdown in electronic resistance above a critical field strength. Known as threshold switching, this mechanism enables field-induced crystallization in emerging phase-change memory. Purely electronic as well as crystal nucleation assisted models have been employed to explain the electronic breakdown. Here, picosecond electric pulses are used to excite amorphous Ag_{4}In_{3}Sb_{67}Te_{26}. Field-dependent reversible changes in conductivity and pulse-driven crystallization are observed. The present results show that threshold switching can take place within the electric pulse on subpicosecond time scales-faster than crystals can nucleate. This supports purely electronic models of threshold switching and reveals potential applications as an ultrafast electronic switch.

Self-assembled oxide films with tailored nanoscale ionic and electronic channels for controlled resistive switching

DOE PAGES

Cho, Seungho; Yun, Chao; Tappertzhofen, Stefan; ...

2016-08-05

Resistive switches are non-volatile memory cells based on nano-ionic redox processes that offer energy efficient device architectures and open pathways to neuromorphics and cognitive computing. However, channel formation typically requires an irreversible, not well controlled electroforming process, giving difficulty to independently control ionic and electronic properties. The device performance is also limited by the incomplete understanding of the underlying mechanisms. Here, we report a novel memristive model material system based on self-assembled Sm-doped CeO 2 and SrTiO 3 films that allow the separate tailoring of nanoscale ionic and electronic channels at high density (~10 12 inch –2). Here, we systematicallymore » show that these devices allow precise engineering of the resistance states, thus enabling large on–off ratios and high reproducibility. The tunable structure presents an ideal platform to explore ionic and electronic mechanisms and we expect a wide potential impact also on other nascent technologies, ranging from ionic gating to micro-solid oxide fuel cells and neuromorphics.« less

Tests of a low-pressure switch protected by a saturating inductor

NASA Astrophysics Data System (ADS)

Lauer, E. J.; Birx, D. L.

Low pressure switches and magnetic switches were tested as possible replacements for the high pressure switches currently used on Experimental Test Accelerator and Advanced Test Accelerator. When the low pressure switch is used with a low impedance transmission line, runaway electrons form a pinched electron beam which damages the anode. The use of the low pressure switch as the first switch in the pulsed power chain was tested; i.e., the switch would be used to connect a charged capacitor across the primary winding of a step up transformer. An inductor with a saturating core is connected in series so that, initially, there is a large inductive voltage drop. As a result, there is small voltage across the switch. By the time the inductor core saturates, the switch has developed sufficient ionization so that the switch voltage remains small, even with peak current, and an electron beam is not produced.

Organic solid state optical switches and method for producing organic solid state optical switches

DOEpatents

Wasielewski, M.R.; Gaines, G.L.; Niemczyk, M.P.; Johnson, D.G.; Gosztola, D.J.; O`Neil, M.P.

1993-01-01

This invention consists of a light-intensity dependent molecular switch comprised of a compound which shuttles an electron or a plurality of electrons from a plurality of electron donors to an electron acceptor upon being stimulated with light of predetermined wavelengths, and a method for making said compound.

Entirely soft dielectric elastomer robots

NASA Astrophysics Data System (ADS)

Henke, E.-F. Markus; Wilson, Katherine E.; Anderson, Iain A.

2017-04-01

Multifunctional Dielectric Elastomer (DE) devices are well established as actuators, sensors and energy har- vesters. Since the invention of the Dielectric Elastomer Switch (DES), a piezoresistive electrode that can directly switch charge on and off, it has become possible to expand the wide functionality of DE structures even more. We show the application of fully soft DE subcomponents in biomimetic robotic structures. It is now possible to couple arrays of actuator/switch units together so that they switch charge between them- selves on and off. One can then build DE devices that operate as self-controlled oscillators. With an oscillator one can produce a periodic signal that controls a soft DE robot - a DE device with its own DE nervous system. DESs were fabricated using a special electrode mixture, and imprinting technology at an exact pre-strain. We have demonstrated six orders of magnitude change in conductivity within the DES over 50% strain. The control signal can either be a mechanical deformation from another DE or an electrical input to a connected dielectric elastomer actuator (DEA). We have demonstrated a variety of fully soft multifunctional subcomponents that enable the design of autonomous soft robots without conventional electronics. The combination of digital logic structures for basic signal processing, data storage in dielectric elastomer flip-flops and digital and analogue clocks with adjustable frequencies, made of dielectric elastomer oscillators (DEOs), enables fully soft, self-controlled and electronics-free robotic structures. DE robotic structures to date include stiff frames to maintain necessary pre-strains enabling sufficient actuation of DEAs. Here we present a design and production technology for a first robotic structure consisting only of soft silicones and carbon black.

MAPPER: high-throughput maskless lithography

NASA Astrophysics Data System (ADS)

Wieland, M. J.; de Boer, G.; ten Berge, G. F.; Jager, R.; van de Peut, T.; Peijster, J. J. M.; Slot, E.; Steenbrink, S. W. H. K.; Teepen, T. F.; van Veen, A. H. V.; Kampherbeek, B. J.

2009-03-01

Maskless electron beam lithography, or electron beam direct write, has been around for a long time in the semiconductor industry and was pioneered from the mid-1960s onwards. This technique has been used for mask writing applications as well as device engineering and in some cases chip manufacturing. However because of its relatively low throughput compared to optical lithography, electron beam lithography has never been the mainstream lithography technology. To extend optical lithography double patterning, as a bridging technology, and EUV lithography are currently explored. Irrespective of the technical viability of both approaches, one thing seems clear. They will be expensive [1]. MAPPER Lithography is developing a maskless lithography technology based on massively-parallel electron-beam writing with high speed optical data transport for switching the electron beams. In this way optical columns can be made with a throughput of 10-20 wafers per hour. By clustering several of these columns together high throughputs can be realized in a small footprint. This enables a highly cost-competitive alternative to double patterning and EUV alternatives. In 2007 MAPPER obtained its Proof of Lithography milestone by exposing in its Demonstrator 45 nm half pitch structures with 110 electron beams in parallel, where all the beams where individually switched on and off [2]. In 2008 MAPPER has taken a next step in its development by building several tools. The objective of building these tools is to involve semiconductor companies to be able to verify tool performance in their own environment. To enable this, the tools will have a 300 mm wafer stage in addition to a 110-beam optics column. First exposures at 45 nm half pitch resolution have been performed and analyzed. On the same wafer it is observed that all beams print and based on analysis of 11 beams the CD for the different patterns is within 2.2 nm from target and the CD uniformity for the different patterns is better than 2.8 nm.

Fault handling schemes in electronic systems with specific application to radiation tolerance and VLSI design

NASA Technical Reports Server (NTRS)

Attia, John Okyere

1993-01-01

Naturally occurring space radiation particles can produce transient and permanent changes in the electrical properties of electronic devices and systems. In this work, the transient radiation effects on DRAM and CMOS SRAM were considered. In addition, the effect of total ionizing dose radiation of the switching times of CMOS logic gates were investigated. Effects of transient radiation on the column and cell of MOS dynamic memory cell was simulated using SPICE. It was found that the critical charge of the bitline was higher than that of the cell. In addition, the critical charge of the combined cell-bitline was found to be dependent on the gate voltage of the access transistor. In addition, the effect of total ionizing dose radiation on the switching times of CMOS logic gate was obtained. The results of this work indicate that, the rise time of CMOS logic gates increases, while the fall time decreases with an increase in total ionizing dose radiation. Also, by increasing the size of the P-channel transistor with respect to that of the N-channel transistor, the propagation delay of CMOS logic gate can be made to decrease with, or be independent of an increase in total ionizing dose radiation. Furthermore, a method was developed for replacing polysilicon feedback resistance of SRAMs with a switched capacitor network. A switched capacitor SRAM was implemented using MOS Technology. The critical change of the switched capacitor SRAM has a very large critical charge. The results of this work indicate that switched capacitor SRAM is a viable alternative to SRAM with polysilicon feedback resistance.

Software-defined networking control plane for seamless integration of multiple silicon photonic switches in Datacom networks.

PubMed

Shen, Yiwen; Hattink, Maarten H N; Samadi, Payman; Cheng, Qixiang; Hu, Ziyiz; Gazman, Alexander; Bergman, Keren

2018-04-16

Silicon photonics based switches offer an effective option for the delivery of dynamic bandwidth for future large-scale Datacom systems while maintaining scalable energy efficiency. The integration of a silicon photonics-based optical switching fabric within electronic Datacom architectures requires novel network topologies and arbitration strategies to effectively manage the active elements in the network. We present a scalable software-defined networking control plane to integrate silicon photonic based switches with conventional Ethernet or InfiniBand networks. Our software-defined control plane manages both electronic packet switches and multiple silicon photonic switches for simultaneous packet and circuit switching. We built an experimental Dragonfly network testbed with 16 electronic packet switches and 2 silicon photonic switches to evaluate our control plane. Observed latencies occupied by each step of the switching procedure demonstrate a total of 344 µs control plane latency for data-center and high performance computing platforms.

Design of an All-Optical Network Based on LCoS Technologies

NASA Astrophysics Data System (ADS)

Cheng, Yuh-Jiuh; Shiau, Yhi

2016-06-01

In this paper, an all-optical network composed of the ROADMs (reconfigurable optical add-drop multiplexer), L2/L3 optical packet switches, and the fiber optical cross-connection for fiber scheduling and measurement based on LCoS (liquid crystal on silicon) technologies is proposed. The L2/L3 optical packet switches are designed with optical output buffers. Only the header of optical packets is converted to electronic signals to control the wavelength of input ports and the packet payloads can be transparently destined to their output ports. An optical output buffer is designed to queue the packets when more than one incoming packet should reach to the same destination output port. For preserving service-packet sequencing and fairness of routing sequence, a priority scheme and a round-robin algorithm are adopted at the optical output buffer. The wavelength of input ports is designed for routing incoming packets using LCoS technologies. Finally, the proposed OFS (optical flow switch) with input buffers can quickly transfer the big data to the output ports and the main purpose of the OFS is to reduce the number of wavelength reflections. The all-optical content delivery network is comprised of the OFSs for a large amount of audio and video data transmissions in the future.

Electron-Impact-Ionization and Electron-Attachment Cross Sections of Radicals Important in Transient Gaseous Discharges.

DTIC Science & Technology

1988-02-05

for understanding the microscopic processes of electrical discharges and for designing gaseous discharge switches. High power gaseous discharge switches...half-maximum) energy resolution. The electron gun and ion extraction were of the same design of Srivastava at the Jet Propulsion Laboratory. Ions...photons. - The observed current switching can be applied to the design of discharge switches. Elec- tron transport parameters are needed for the

CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES: Switching Characteristics of Phase Change Memory Cell Integrated with Metal-Oxide Semiconductor Field Effect Transistor

NASA Astrophysics Data System (ADS)

Xu, Cheng; Liu, Bo; Chen, Yi-Feng; Liang, Shuang; Song, Zhi-Tang; Feng, Song-Lin; Wan, Xu-Dong; Yang, Zuo-Ya; Xie, Joseph; Chen, Bomy

2008-05-01

A Ge2Sb2Te5 based phase change memory device cell integrated with metal-oxide semiconductor field effect transistor (MOSFET) is fabricated using standard 0. 18 μm complementary metal-oxide semiconductor process technology. It shows steady switching characteristics in the dc current-voltage measurement. The phase changing phenomenon from crystalline state to amorphous state with a voltage pulse altitude of 2.0 V and pulse width of 50 ns is also obtained. These results show the feasibility of integrating phase change memory cell with MOSFET.

Organic solid state switches incorporating porphyrin compounds and method for producing organic solid state optical switches

DOEpatents

Wasielewski, Michael R.; Gaines, George L.; Niemczyk, Mark P.; Johnson, Douglas G.; Gosztola, David J.; O'Neil, Michael P.

1996-01-01

A light-intensity dependent molecular switch comprised of a compound which shuttles an electron or a plurality of electrons from a plurality of electron donors to an electron acceptor upon being stimulated with light of predetermined wavelengths, said donors selected from porphyrins and other compounds, and a method for making said compound.

Coupling and Switching in Optically Resonant Periodic Electrode Structures

NASA Astrophysics Data System (ADS)

Bieber, Amy Erica

This thesis describes coupling and switching of optical radiation using metal-semiconductor-metal (MSM) structures, specifically in a metal-on-silicon waveguide configuration. The structures which are the subject of this research have the special advantage of being VLSI -compatible; this is very important for the ultimate acceptance of any integrated optoelectronics technology by the mainstream semiconductor community. To date, research efforts in VLSI electronics, MSM detectors, metal devices, and optical switching have existed as separate entities with decidedly different goals. This work attempts to unite these specialties; an interdigitated array of metal fingers on a silicon waveguide allows for (1) fabrication processes which are well-understood and compatible with current or next-generation semiconductor manufacturing standards, (2) electrical bias capability which can potentially provide modulation, tuning, and enhanced speed, and (3) potentially efficient waveguide coupling which takes advantage of TM coupling. The latter two items are made possible by the use of metallic gratings, which sets this work apart from previous optical switching results. This MSM structure represents an important step in uniting four vital technologies which, taken together, can lead to switching performance and operational flexibility which could substantially advance the capabilities of current optoelectronic devices. Three different designs were successfully used to examine modulation and optical switching based upon nonlinear interactions in the silicon waveguide. First, a traditional Bragg reflector design with input and output couplers on either side was used to observe switching of nanosecond-regime Nd:YAG pulses. This structure was thermally tuned to obtain a variety of switching dynamics. Next, a phase-shift was incorporated into the Bragg reflector, and again thermally-tunable switching dynamics were observed, but with the added advantage of a reduction in the energy requirements for optical switching. Finally, the roles of the coupler and Bragg reflector were combined in a normal -incidence structure which exhibited nonlinear reflectivity modulation. This has not only been the first experimental demonstration of optical switching in a metal-semiconductor waveguide structure, but, to our knowledge, one of the first such demonstrations using a nonlinear phase-shifted or normal incidence grating of any kind.

Organic solid state switches incorporating porphyrin compounds and method for producing organic solid state optical switches

DOEpatents

Wasielewski, M.R.; Gaines, G.L.; Niemczyk, M.P.; Johnson, D.G.; Gosztola, D.J.; O`Neil, M.P.

1996-07-23

A light-intensity dependent molecular switch comprised of a compound which shuttles an electron or a plurality of electrons from a plurality of electron donors to an electron acceptor upon being stimulated with light of predetermined wavelengths, said donors selected from porphyrins and other compounds, and a method for making said compound are disclosed. 4 figs.

Shock waves in binary oxides memristors

NASA Astrophysics Data System (ADS)

Tesler, Federico; Tang, Shao; Dobrosavljević, Vladimir; Rozenberg, Marcelo

2017-09-01

Progress of silicon based technology is nearing its physical limit, as minimum feature size of components is reaching a mere 5 nm. The resistive switching behavior of transition metal oxides and the associated memristor device is emerging as a competitive technology for next generation electronics. Significant progress has already been made in the past decade and devices are beginning to hit the market; however, it has been mainly the result of empirical trial and error. Hence, gaining theoretical insight is of essence. In the present work we report a new connection between the resistive switching and shock wave formation, a classic topic of non-linear dynamics. We argue that the profile of oxygen ions that migrate during the commutation in insulating binary oxides may form a shock wave, which propagates through a poorly conductive region of the device. We validate the scenario by means of model simulations.

Vertical organic transistors.

PubMed

Lüssem, Björn; Günther, Alrun; Fischer, Axel; Kasemann, Daniel; Leo, Karl

2015-11-11

Organic switching devices such as field effect transistors (OFETs) are a key element of future flexible electronic devices. So far, however, a commercial breakthrough has not been achieved because these devices usually lack in switching speed (e.g. for logic applications) and current density (e.g. for display pixel driving). The limited performance is caused by a combination of comparatively low charge carrier mobilities and the large channel length caused by the need for low-cost structuring. Vertical Organic Transistors are a novel technology that has the potential to overcome these limitations of OFETs. Vertical Organic Transistors allow to scale the channel length of organic transistors into the 100 nm regime without cost intensive structuring techniques. Several different approaches have been proposed in literature, which show high output currents, low operation voltages, and comparatively high speed even without sub-μm structuring technologies. In this review, these different approaches are compared and recent progress is highlighted.

Nanoelectronics: Opportunities for future space applications

NASA Technical Reports Server (NTRS)

Frazier, Gary

1995-01-01

Further improvements in the performance of integrated electronics will eventually halt due to practical fundamental limits on our ability to downsize transistors and interconnect wiring. Avoiding these limits requires a revolutionary approach to switching device technology and computing architecture. Nanoelectronics, the technology of exploiting physics on the nanometer scale for computation and communication, attempts to avoid conventional limits by developing new approaches to switching, circuitry, and system integration. This presentation overviews the basic principles that operate on the nanometer scale that can be assembled into practical devices and circuits. Quantum resonant tunneling (RT) is used as the center-piece of the overview since RT devices already operate at high temperature (120 degrees C) and can be scaled, in principle, to a few nanometers in semiconductors. Near- and long-term applications of GaAs and silicon quantum devices are suggested for signal and information processing, memory, optoelectronics, and radio frequency (RF) communication.

Software-defined networking control plane for seamless integration of multiple silicon photonic switches in Datacom networks

DOE PAGES

Shen, Yiwen; Hattink, Maarten; Samadi, Payman; ...

2018-04-13

Silicon photonics based switches offer an effective option for the delivery of dynamic bandwidth for future large-scale Datacom systems while maintaining scalable energy efficiency. The integration of a silicon photonics-based optical switching fabric within electronic Datacom architectures requires novel network topologies and arbitration strategies to effectively manage the active elements in the network. Here, we present a scalable software-defined networking control plane to integrate silicon photonic based switches with conventional Ethernet or InfiniBand networks. Our software-defined control plane manages both electronic packet switches and multiple silicon photonic switches for simultaneous packet and circuit switching. We built an experimental Dragonfly networkmore » testbed with 16 electronic packet switches and 2 silicon photonic switches to evaluate our control plane. Observed latencies occupied by each step of the switching procedure demonstrate a total of 344 microsecond control plane latency for data-center and high performance computing platforms.« less

Software-defined networking control plane for seamless integration of multiple silicon photonic switches in Datacom networks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shen, Yiwen; Hattink, Maarten; Samadi, Payman

Silicon photonics based switches offer an effective option for the delivery of dynamic bandwidth for future large-scale Datacom systems while maintaining scalable energy efficiency. The integration of a silicon photonics-based optical switching fabric within electronic Datacom architectures requires novel network topologies and arbitration strategies to effectively manage the active elements in the network. Here, we present a scalable software-defined networking control plane to integrate silicon photonic based switches with conventional Ethernet or InfiniBand networks. Our software-defined control plane manages both electronic packet switches and multiple silicon photonic switches for simultaneous packet and circuit switching. We built an experimental Dragonfly networkmore » testbed with 16 electronic packet switches and 2 silicon photonic switches to evaluate our control plane. Observed latencies occupied by each step of the switching procedure demonstrate a total of 344 microsecond control plane latency for data-center and high performance computing platforms.« less

Switching behaviour of individual Ag-TCNQ nanowires: an in situ transmission electron microscopy study

NASA Astrophysics Data System (ADS)

Ran, Ke; Rösner, Benedikt; Butz, Benjamin; Fink, Rainer H.; Spiecker, Erdmann

2016-10-01

The organic semiconductor silver-tetracyanoquinodimethane (Ag-TCNQ) exhibits electrical switching and memory characteristics. Employing a scanning tunnelling microscopy setup inside a transmission electron microscope, the switching behaviour of individual Ag-TCNQ nanowires (NWs) is investigated in detail. For a large number of NWs, the switching between a high (OFF) and a low (ON) resistance state was successfully stimulated by negative bias sweeps. Fitting the experimental I-V curves with a Schottky emission function makes the switching features prominent and thus enables a direct evaluation of the switching process. A memory cycle including writing, reading and erasing features is demonstrated at an individual NW. Moreover, electronic failure mechanisms due to Joule heating are discussed. These findings have a significant impact on our understanding of the switching behaviour of Ag-TCNQ.

Electronic switching circuit uses complementary non-linear components

NASA Technical Reports Server (NTRS)

Zucker, O. S.

1972-01-01

Inherent switching properties of saturable inductors and storage diodes are combined to perform large variety of electronic functions, such as pulse shaping, gating, and multiplexing. Passive elements replace active switching devices in generation of complex waveforms.

Triggered plasma opening switch

DOEpatents

Mendel, Clifford W.

1988-01-01

A triggerable opening switch for a very high voltage and current pulse includes a transmission line extending from a source to a load and having an intermediate switch section including a plasma for conducting electrons between transmission line conductors and a magnetic field for breaking the plasma conduction path and magnetically insulating the electrons when it is desired to open the switch.

Dramatic switching behavior in suspended MoS2 field-effect transistors

NASA Astrophysics Data System (ADS)

Chen, Huawei; Li, Jingyu; Chen, Xiaozhang; Zhang, David; Zhou, Peng

2018-02-01

When integrating MoS2 flakes into scaling-down transistors, the short-channel effect, which is severe in silicon technology below 5-nanometer, can be avoided effectively. MoS2 transistors not only exhibit a high on/off ratio but also demonstrate a rapid switching speed. According to the theoretical calculation, the thermionic limit subthreshold slope (SS) of the ideal device could reach 60 mV/dec. However, due to the confinement of defects from substrates or contamination during the process, the SS deteriorates to more than 300 mV/dec, causing serious power consumption. In this work, we optimize the SS through structure design of MoS2 transistors. The suspended transistors exhibit a high on/off ratio of 107 and a minimum SS of 63 mV/dec with an ultralow standby power at room temperature. This study demonstrates the promising potential of structure design for electronic devices with ultralow-power switching behaviors.

Driver ASIC Environmental Testing and Performance Optimization for SpaceBased Active Mirrors

NASA Astrophysics Data System (ADS)

Mejia Prada, Camilo

Direct imaging of Earth-like planets requires techniques for light suppression, such as coronagraphs or nulling interferometers, in which deformable mirrors (DM) are a principal component. On ground-based systems, DMs are used to correct for turbulence in the Earth’s atmosphere in addition to static aberrations in the optics. For space-based observations, DMs are used to correct for static and quasi- static aberrations in the optical train. State-of-the-art, high-actuator count deformable mirrors suffer from external heavy and bulky electronics in which electrical connections are made through thousands of wires. We are instead developing Application Specific Integrated Circuits (ASICs) capable of direct integration with the DM in a single small package. This integrated ASIC-DM is ideal for space missions, where it offers significant reduction in mass, power and complexity, and performance compatible with high-contrast observations of exoplanets. We have successfully prototyped and tested a 32x32 format Switch-Mode (SM) ASIC which consumes only 2mW static power (total, not per-actuator). A number of constraints were imposed on key parameters of this ASIC design, including sub-picoamp levels of leakage across turned-off switches and from switch-to-substrate, control resolution of 0.04 mV, satisfactory rise/fall times, and a near-zero on-chip crosstalk over a useful range of operating temperatures. This driver ASIC technology is currently at TRL 4. This Supporting Technology proposal will further develop the ASIC technology to TRL 5 by carrying on environmental tests and further optimizing performance, with the end goal of making ASICs suitable for space-based deployment. The effort will be led by JPL, which has considerable expertise with DMs used in highcontrast imaging systems for exoplanet missions and in adaptive optic systems, and in design of DM driver electronics. Microscale, which developed the prototype of the ASICDM, will continue its development. We propose a three-part program to advance the device maturity. The effort will cover (1) radiation hardness, (2) thermal-vacuum environment tests, and (3) parameter performance optimization. We expect to implement the results in an optimized ASIC design for NASA's space applications, expanding the current state-of-the-art into radiation-hardened electronics robust enough for a space environment. This effort will fill technology gaps listed in the Exoplanet Exploration Program Technology Plan 2017 : “The challenge is believed to not be the mosaicking of 48×48 devices or 32×32 devices (to reach 128×128) but rather dealing with the enormous number of interconnects and their electronics.”. After the close of this effort, continued ASIC development is of course planned, leading to further improvement in parameters.

Graphene: an emerging electronic material.

PubMed

Weiss, Nathan O; Zhou, Hailong; Liao, Lei; Liu, Yuan; Jiang, Shan; Huang, Yu; Duan, Xiangfeng

2012-11-14

Graphene, a single layer of carbon atoms in a honeycomb lattice, offers a number of fundamentally superior qualities that make it a promising material for a wide range of applications, particularly in electronic devices. Its unique form factor and exceptional physical properties have the potential to enable an entirely new generation of technologies beyond the limits of conventional materials. The extraordinarily high carrier mobility and saturation velocity can enable a fast switching speed for radio-frequency analog circuits. Unadulterated graphene is a semi-metal, incapable of a true off-state, which typically precludes its applications in digital logic electronics without bandgap engineering. The versatility of graphene-based devices goes beyond conventional transistor circuits and includes flexible and transparent electronics, optoelectronics, sensors, electromechanical systems, and energy technologies. Many challenges remain before this relatively new material becomes commercially viable, but laboratory prototypes have already shown the numerous advantages and novel functionality that graphene provides. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof

DOEpatents

Tour, James M.; Yao, Jun; Natelson, Douglas; Zhong, Lin; He, Tao

2015-09-08

In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the gap region between the first electrical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.

Electronic devices containing switchably conductive silicon oxides as a switching element and methods for production and use thereof

DOEpatents

Tour, James M; Yao, Jun; Natelson, Douglas; Zhong, Lin; He, Tao

2013-11-26

In various embodiments, electronic devices containing switchably conductive silicon oxide as a switching element are described herein. The electronic devices are two-terminal devices containing a first electrical contact and a second electrical contact in which at least one of the first electrical contact or the second electrical contact is deposed on a substrate to define a gap region therebetween. A switching layer containing a switchably conductive silicon oxide resides in the the gap region between the first electical contact and the second electrical contact. The electronic devices exhibit hysteretic current versus voltage properties, enabling their use in switching and memory applications. Methods for configuring, operating and constructing the electronic devices are also presented herein.

Solid-state pulse modulator using Marx generator for a medical linac electron-gun

NASA Astrophysics Data System (ADS)

Lim, Heuijin; Hyeok Jeong, Dong; Lee, Manwoo; Lee, Mujin; Yi, Jungyu; Yang, Kwangmo; Ro, Sung Chae

2016-04-01

A medical linac is used for the cancer treatment and consists of an accelerating column, waveguide components, a magnetron, an electron-gun, a pulse modulator, and an irradiation system. The pulse modulator based on hydrogen thyratron-switched pulse-forming network is commonly used in linac. As the improvement of the high power semiconductors in switching speed, voltage rating, and current rating, an insulated gate bipolar transistor has become the more popular device used for pulsed power systems. We propose a solid-state pulse modulator to generator high voltage by multi-stacked storage-switch stages based on the Marx generator. The advantage of our modulator comes from the use of two semiconductors to control charging and discharging of the storage capacitor at each stage and it allows to generate the pulse with various amplitudes, widths, and shapes. In addition, a gate driver for two semiconductors is designed to reduce the control channels and to protect the circuits. It is developed for providing the pulsed power to a medical linac electron-gun that requires 25 kV and 1 A as the first application. In order to improve the power efficiency and achieve the compactness modulator, a capacitor charging power supply, a Marx pulse generator, and an electron-gun heater isolated transformer are constructed and integrated. This technology is also being developed to extend the high power pulsed system with > 1 MW and also other applications such as a plasma immersed ion implantation and a micro pulse electrostatic precipitator which especially require variable pulse shape and high repetition rate > 1 kHz. The paper describes the design features and the construction of this solid-state pulse modulator. Also shown are the performance results into the linac electron-gun.

Anomalous Resistance Hysteresis in Oxide ReRAM: Oxygen Evolution and Reincorporation Revealed by In Situ TEM.

PubMed

Cooper, David; Baeumer, Christoph; Bernier, Nicolas; Marchewka, Astrid; La Torre, Camilla; Dunin-Borkowski, Rafal E; Menzel, Stephan; Waser, Rainer; Dittmann, Regina

2017-06-01

The control and rational design of redox-based memristive devices, which are highly attractive candidates for next-generation nonvolatile memory and logic applications, is complicated by competing and poorly understood switching mechanisms, which can result in two coexisting resistance hystereses that have opposite voltage polarity. These competing processes can be defined as regular and anomalous resistive switching. Despite significant characterization efforts, the complex nanoscale redox processes that drive anomalous resistive switching and their implications for current transport remain poorly understood. Here, lateral and vertical mapping of O vacancy concentrations is used during the operation of such devices in situ in an aberration corrected transmission electron microscope to explain the anomalous switching mechanism. It is found that an increase (decrease) in the overall O vacancy concentration within the device after positive (negative) biasing of the Schottky-type electrode is associated with the electrocatalytic release and reincorporation of oxygen at the electrode/oxide interface and is responsible for the resistance change. This fundamental insight presents a novel perspective on resistive switching processes and opens up new technological opportunities for the implementation of memristive devices, as anomalous switching can now be suppressed selectively or used deliberately to achieve the desirable so-called deep Reset. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Voltage equaliser for Li-Fe battery

NASA Astrophysics Data System (ADS)

Wu, Jinn-Chang; Jou, Hurng-Liahng; Chuang, Ping-Hao

2013-10-01

In this article, a voltage equaliser is proposed for a battery string with four Li-Fe batteries. The proposed voltage equaliser is developed from a flyback converter, which comprises a transformer, a power electronic switch and a resonant clamped circuit. The transformer contains a primary winding and four secondary windings with the same number of turns connected to each battery. The resonant clamped circuit is for recycling the energy of leakage inductance of the transformer and for performing zero-voltage switching (ZVS) of the power electronic switch. When the power electronic switch is switched on, the energy is stored in the transformer; and when the power electronic switch is switched off, the energy stored in the transformer will automatically charge the battery whose voltage is the lowest. In this way, the voltage of individual batteries in the battery string is balanced. The salient features of the proposed voltage equaliser are that only one switch is used, the energy stored in the leakage inductance of the transformer can be recycled and ZVS is obtained. A prototype is developed and tested to verify the performance of the proposed voltage equaliser. The experimental results show that the proposed voltage equaliser achieves the expected performance.

Smart Power: New power integrated circuit technologies and their applications

NASA Astrophysics Data System (ADS)

Kuivalainen, Pekka; Pohjonen, Helena; Yli-Pietilae, Timo; Lenkkeri, Jaakko

1992-05-01

Power Integrated Circuits (PIC) is one of the most rapidly growing branches of the semiconductor technology. The PIC markets has been forecast to grow from 660 million dollars in 1990 to 1658 million dollars in 1994. It has even been forecast that at the end of the 1990's the PIC markets would correspond to the value of the whole semiconductor production in 1990. Automotive electronics will play the leading role in the development of the standard PIC's. Integrated motor drivers (36 V/4 A), smart integrated switches (60 V/30 A), solenoid drivers, integrated switch-mode power supplies and regulators are the latest standard devices of the PIC manufactures. ASIC (Application Specific Integrated Circuits) PIC solutions are needed for the same reasons as other ASIC devices: there are no proper standard devices, a company has a lot of application knowhow, which should be kept inside the company, the size of the product must be reduced, and assembly costs are wished to be reduced by decreasing the number of discrete devices. During the next few years the most probable ASIC PIC applications in Finland will be integrated solenoid and motor drivers, an integrated electronic lamp ballast circuit and various sensor interface circuits. Application of the PIC technologies to machines and actuators will strongly be increased all over the world. This means that various PIC's, either standard PIC's or full custom ASIC circuits, will appear in many products which compete with the corresponding Finnish products. Therefore the development of the PIC technologies must be followed carefully in order to immediately be able to apply the latest development in the smart power technologies and their design methods.

Piezoelectric-based self-powered electronic adjustable impulse switches

NASA Astrophysics Data System (ADS)

Rastegar, Jahangir; Kwok, Philip

2018-03-01

Novel piezoelectric-based self-powered impulse detecting switches are presented. The switches are designed to detect shock loading events resulting in acceleration or deceleration above prescribed levels and durations. The prescribed acceleration level and duration thresholds are adjustable. They are provided with false trigger protection logic. The impulse switches are provided with electronic and logic circuitry to detect prescribed impulse events and reject events such as high amplitude but short duration shocks, and transportation vibration and similar low amplitude and relatively long duration events. They can be mounted directly onto electronics circuit boards, thereby significantly simplifying the electrical and electronic circuitry, simplifying the assembly process and total cost, significantly reducing the occupied volume, and in some applications eliminating the need for physical wiring to and from the impulse switches. The design of prototypes and testing under realistic conditions are presented.

Effects of doping concentration ratio on electrical characterization in pseudomorphic HEMT-based MMIC switches for ICT system

NASA Astrophysics Data System (ADS)

Mun, Jae-Kyoung; Oh, Jung-Hun; Sung, Ho-Kun; Wang, Cong

2015-12-01

The effects of the doping concentration ratios between upper and lower silicon planar-doping layers on the DC and RF characteristics of the double planar doped pseudomorphic high electron mobility transistors (pHEMTs) are investigated. From the device simulation, an increase of maximum extrinsic transconductance and a decrease of total on- and off-state capacitances are observed, as well as an increase of the upper to lower planar-doping concentration ratios (UTLPDR), which give rise to an enhancement of the switching speed and isolation characteristics. On the basis of simulation results, two types of pHEMTs are fabricated with two different UTLPDRs of 4:1 and 1:2. After applying these two types' pHEMTs, single-pole-double-throw (SPDT) transmitter/receiver monolithic microwave integrated circuit (MMIC) switches are also designed and fabricated. The SPDT MMIC switch with a 4:1 UTLPDR shows an insertion loss of 0.58 dB, isolation of 40.2 dB, and switching speed of 100 ns, respectively, which correspondingly indicate a 0.23 dB lower insertion loss, 2.90 dB higher isolation and 2.5 times faster switching speed than those of 1:2 UTLPDR at frequency range of 2-6 GHz. From the simulation results and comparative studies, we propose that the UTLPDR must be greater than 4:1 for the best switching performance. With the abovementioned excellent performances, the proposed switch would be quite promising in the application of information and communications technology system.

Progress on complementary patterning using plasmon-excited electron beamlets (Conference Presentation)

NASA Astrophysics Data System (ADS)

Du, Zhidong; Chen, Chen; Pan, Liang

2017-04-01

Maskless lithography using parallel electron beamlets is a promising solution for next generation scalable maskless nanolithography. Researchers have focused on this goal but have been unable to find a robust technology to generate and control high-quality electron beamlets with satisfactory brightness and uniformity. In this work, we will aim to address this challenge by developing a revolutionary surface-plasmon-enhanced-photoemission (SPEP) technology to generate massively-parallel electron beamlets for maskless nanolithography. The new technology is built upon our recent breakthroughs in plasmonic lenses, which will be used to excite and focus surface plasmons to generate massively-parallel electron beamlets through photoemission. Specifically, the proposed SPEP device consists of an array of plasmonic lens and electrostatic micro-lens pairs, each pair independently producing an electron beamlet. During lithography, a spatial optical modulator will dynamically project light onto individual plasmonic lenses to control the switching and brightness of electron beamlets. The photons incident onto each plasmonic lens are concentrated into a diffraction-unlimited spot as localized surface plasmons to excite the local electrons to near their vacuum levels. Meanwhile, the electrostatic micro-lens extracts the excited electrons to form a focused beamlet, which can be rastered across a wafer to perform lithography. Studies showed that surface plasmons can enhance the photoemission by orders of magnitudes. This SPEP technology can scale up the maskless lithography process to write at wafers per hour. In this talk, we will report the mechanism of the strong electron-photon couplings and the locally enhanced photoexcitation, design of a SPEP device, overview of our proof-of-concept study, and demonstrated parallel lithography of 20-50 nm features.

Quantum switching of π-electron rotations in a nonplanar chiral molecule by using linearly polarized UV laser pulses.

PubMed

Mineo, Hirobumi; Yamaki, Masahiro; Teranishi, Yoshiaki; Hayashi, Michitoshi; Lin, Sheng Hsien; Fujimura, Yuichi

2012-09-05

Nonplanar chiral aromatic molecules are candidates for use as building blocks of multidimensional switching devices because the π electrons can generate ring currents with a variety of directions. We employed (P)-2,2'-biphenol because four patterns of π-electron rotations along the two phenol rings are possible and theoretically determine how quantum switching of the π-electron rotations can be realized. We found that each rotational pattern can be driven by a coherent excitation of two electronic states under two conditions: one is the symmetry of the electronic states and the other is their relative phase. On the basis of the results of quantum dynamics simulations, we propose a quantum control method for sequential switching among the four rotational patterns that can be performed by using ultrashort overlapped pump and dump pulses with properly selected relative phases and photon polarization directions. The results serve as a theoretical basis for the design of confined ultrafast switching of ring currents of nonplanar molecules and further current-induced magnetic fluxes of more sophisticated systems.

A new time calibration method for switched-capacitor-array-based waveform samplers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, H.; Chen, C. -T.; Eclov, N.

2014-08-24

Here we have developed a new time calibration method for the DRS4 waveform sampler that enables us to precisely measure the non-uniform sampling interval inherent in the switched-capacitor cells of the DRS4. The method uses the proportionality between the differential amplitude and sampling interval of adjacent switched-capacitor cells responding to a sawtooth-shape pulse. In the experiment, a sawtooth-shape pulse with a 40 ns period generated by a Tektronix AWG7102 is fed to a DRS4 evaluation board for calibrating the sampling intervals of all 1024 cells individually. The electronic time resolution of the DRS4 evaluation board with the new time calibrationmore » is measured to be ~2.4 ps RMS by using two simultaneous Gaussian pulses with 2.35 ns full-width at half-maximum and applying a Gaussian fit. The time resolution dependencies on the time difference with the new time calibration are measured and compared to results obtained by another method. Ultimately, the new method could be applicable for other switched-capacitor-array technology-based waveform samplers for precise time calibration.« less

A new time calibration method for switched-capacitor-array-based waveform samplers

NASA Astrophysics Data System (ADS)

Kim, H.; Chen, C.-T.; Eclov, N.; Ronzhin, A.; Murat, P.; Ramberg, E.; Los, S.; Moses, W.; Choong, W.-S.; Kao, C.-M.

2014-12-01

We have developed a new time calibration method for the DRS4 waveform sampler that enables us to precisely measure the non-uniform sampling interval inherent in the switched-capacitor cells of the DRS4. The method uses the proportionality between the differential amplitude and sampling interval of adjacent switched-capacitor cells responding to a sawtooth-shape pulse. In the experiment, a sawtooth-shape pulse with a 40 ns period generated by a Tektronix AWG7102 is fed to a DRS4 evaluation board for calibrating the sampling intervals of all 1024 cells individually. The electronic time resolution of the DRS4 evaluation board with the new time calibration is measured to be 2.4 ps RMS by using two simultaneous Gaussian pulses with 2.35 ns full-width at half-maximum and applying a Gaussian fit. The time resolution dependencies on the time difference with the new time calibration are measured and compared to results obtained by another method. The new method could be applicable for other switched-capacitor-array technology-based waveform samplers for precise time calibration.

A New Time Calibration Method for Switched-capacitor-array-based Waveform Samplers.

PubMed

Kim, H; Chen, C-T; Eclov, N; Ronzhin, A; Murat, P; Ramberg, E; Los, S; Moses, W; Choong, W-S; Kao, C-M

2014-12-11

We have developed a new time calibration method for the DRS4 waveform sampler that enables us to precisely measure the non-uniform sampling interval inherent in the switched-capacitor cells of the DRS4. The method uses the proportionality between the differential amplitude and sampling interval of adjacent switched-capacitor cells responding to a sawtooth-shape pulse. In the experiment, a sawtooth-shape pulse with a 40 ns period generated by a Tektronix AWG7102 is fed to a DRS4 evaluation board for calibrating the sampling intervals of all 1024 cells individually. The electronic time resolution of the DRS4 evaluation board with the new time calibration is measured to be ~2.4 ps RMS by using two simultaneous Gaussian pulses with 2.35 ns full-width at half-maximum and applying a Gaussian fit. The time resolution dependencies on the time difference with the new time calibration are measured and compared to results obtained by another method. The new method could be applicable for other switched-capacitor-array technology-based waveform samplers for precise time calibration.

A New Time Calibration Method for Switched-capacitor-array-based Waveform Samplers

PubMed Central

Kim, H.; Chen, C.-T.; Eclov, N.; Ronzhin, A.; Murat, P.; Ramberg, E.; Los, S.; Moses, W.; Choong, W.-S.; Kao, C.-M.

2014-01-01

We have developed a new time calibration method for the DRS4 waveform sampler that enables us to precisely measure the non-uniform sampling interval inherent in the switched-capacitor cells of the DRS4. The method uses the proportionality between the differential amplitude and sampling interval of adjacent switched-capacitor cells responding to a sawtooth-shape pulse. In the experiment, a sawtooth-shape pulse with a 40 ns period generated by a Tektronix AWG7102 is fed to a DRS4 evaluation board for calibrating the sampling intervals of all 1024 cells individually. The electronic time resolution of the DRS4 evaluation board with the new time calibration is measured to be ~2.4 ps RMS by using two simultaneous Gaussian pulses with 2.35 ns full-width at half-maximum and applying a Gaussian fit. The time resolution dependencies on the time difference with the new time calibration are measured and compared to results obtained by another method. The new method could be applicable for other switched-capacitor-array technology-based waveform samplers for precise time calibration. PMID:25506113

Highly Stretchable and UV Curable Elastomers for Digital Light Processing Based 3D Printing.

PubMed

Patel, Dinesh K; Sakhaei, Amir Hosein; Layani, Michael; Zhang, Biao; Ge, Qi; Magdassi, Shlomo

2017-04-01

Stretchable UV-curable (SUV) elastomers can be stretched by up to 1100% and are suitable for digital-light-processing (DLP)-based 3D-printing technology. DLP printing of these SUV elastomers enables the direct creation of highly deformable complex 3D hollow structures such as balloons, soft actuators, grippers, and buckyball electronical switches. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

The RACE (R&D in Advanced Communications Technologies for Europe) Program of the European Communities

DTIC Science & Technology

1988-08-17

asynchronous TDM for all channels; and hybrid solu- However, since technoeconomic considerations may im- tions, possibly involving dynamic rearranging. A...qualitative electronic switching are favored: CMOS, silicon bipolar, analysis , under the headings: timing of introduction, net- and gallium arsenide...or ring configurations. tem requirements. Project 1029. In this project an up-to-date analysis Microelectronic Components was made of the state of the

Texturing Copper To Reduce Secondary Emission Of Electrons

NASA Technical Reports Server (NTRS)

Jensen, Kenneth A.; Curren, Arthur N.; Roman, Robert F.

1995-01-01

Ion-beam process produces clean, deeply textured surfaces on copper substrates with reduced secondary electron emission. In process, molybdenum ring target positioned above and around copper substrate. Target potential repeatedly switched on and off. Switching module described in "High-Voltage MOSFET Switching Circuit" (LEW-15986). Useful for making collector electrodes for traveling-wave-tube and klystron microwave amplifiers, in which secondary emission of electrons undesirable because of reducing efficiency.

The evolving role of telecommunications switching

DOE Office of Scientific and Technical Information (OSTI.GOV)

Personick, S.D.

1993-01-01

There are many forces impacting on the evolution of switching vis-a-vis its role in telecommunications/information networking. Many of the technologies that in the past 15 years have enabled the cost reductions the industry has experienced in digital switches, and the emergence of intelligent networks are now also enabling a wide range of new end-user applications. Many of these applications are rapidly emerging and evolving to meet the, as yet, uncertain needs of the marketplace. There is an explosion of new ideas for applications involving personalized, nomadic communications, multimedia communications, and information access. Some of these will succeed in the marketplacemore » and some will not. There is a continuing emergence of new and improved underlying electronic and photonic technologies and, most recently, the emergence of reliable, secure distributed computing, communications, and management environments. End-user CPE and servers have become increasingly powerful and cost effective as places to locate session (call) management and session enabling objects such as user-interfaces, directories, agents, multimedia bridges, and storage/server subsystems. Not only are dramatically new paradigms for building networks to support existing applications possible, but there is a pressing need to support the emerging and evolving new applications in a timely way. Competition is accelerating the rate of introduction of new technologies, architectures, and telecommunication services. Every aspect of the business is being reexamined to find better ways of meeting customers' needs more efficiently. Meanwhile, as new applications become deployed, there are increasing pressures to provide for security, privacy, and network integrity. This article reviews the author's personal views (many of which are widely shared by others) of the implications of all of these forces on what we traditionally call telecommunications switching. 10 refs.« less

Switching Hole and Electron Transports of Molecules on Metal Oxides by Energy Level Alignment Tuning.

PubMed

Bao, Zhong-Min; Xu, Rui-Peng; Li, Chi; Xie, Zhong-Zhi; Zhao, Xin-Dong; Zhang, Yi-Bo; Li, Yan-Qing; Tang, Jian-Xin

2016-08-31

Charge transport at organic/inorganic hybrid contacts significantly affects the performance of organic optoelectronic devices because the unfavorable energy level offsets at these interfaces can hinder charge injection or extraction due to large barrier heights. Herein, we report a technologically relevant method to functionalize a traditional hole-transport layer of solution-processed nickel oxide (NiOx) with various interlayers. The photoemission spectroscopy measurements reveal the continuous tuning of the NiOx substrate work function ranging from 2.5 to 6.6 eV, enabling the alignment transition of energy levels between the Schottky-Mott limit and Fermi level pinning at the organic/composite NiOx interface. As a result, switching hole and electron transport for the active organic material on the composite NiOx layer is achieved due to the controlled carrier injection/extraction barriers. The experimental findings indicate that tuning the work function of metal oxides with optimum energy level offsets can facilitate the charge transport at organic/electrode contacts.

Low-loss plasmon-assisted electro-optic modulator.

PubMed

Haffner, Christian; Chelladurai, Daniel; Fedoryshyn, Yuriy; Josten, Arne; Baeuerle, Benedikt; Heni, Wolfgang; Watanabe, Tatsuhiko; Cui, Tong; Cheng, Bojun; Saha, Soham; Elder, Delwin L; Dalton, Larry R; Boltasseva, Alexandra; Shalaev, Vladimir M; Kinsey, Nathaniel; Leuthold, Juerg

2018-04-01

For nearly two decades, researchers in the field of plasmonics 1 -which studies the coupling of electromagnetic waves to the motion of free electrons near the surface of a metal 2 -have sought to realize subwavelength optical devices for information technology 3-6 , sensing 7,8 , nonlinear optics 9,10 , optical nanotweezers 11 and biomedical applications 12 . However, the electron motion generates heat through ohmic losses. Although this heat is desirable for some applications such as photo-thermal therapy, it is a disadvantage in plasmonic devices for sensing and information technology 13 and has led to a widespread view that plasmonics is too lossy to be practical. Here we demonstrate that the ohmic losses can be bypassed by using 'resonant switching'. In the proposed approach, light is coupled to the lossy surface plasmon polaritons only in the device's off state (in resonance) in which attenuation is desired, to ensure large extinction ratios between the on and off states and allow subpicosecond switching. In the on state (out of resonance), destructive interference prevents the light from coupling to the lossy plasmonic section of a device. To validate the approach, we fabricated a plasmonic electro-optic ring modulator. The experiments confirm that low on-chip optical losses, operation at over 100 gigahertz, good energy efficiency, low thermal drift and a compact footprint can be combined in a single device. Our result illustrates that plasmonics has the potential to enable fast, compact on-chip sensing and communications technologies.

Spiers Memorial Lecture. Molecular mechanics and molecular electronics.

PubMed

Beckman, Robert; Beverly, Kris; Boukai, Akram; Bunimovich, Yuri; Choi, Jang Wook; DeIonno, Erica; Green, Johnny; Johnston-Halperin, Ezekiel; Luo, Yi; Sheriff, Bonnie; Stoddart, Fraser; Heath, James R

2006-01-01

We describe our research into building integrated molecular electronics circuitry for a diverse set of functions, and with a focus on the fundamental scientific issues that surround this project. In particular, we discuss experiments aimed at understanding the function of bistable rotaxane molecular electronic switches by correlating the switching kinetics and ground state thermodynamic properties of those switches in various environments, ranging from the solution phase to a Langmuir monolayer of the switching molecules sandwiched between two electrodes. We discuss various devices, low bit-density memory circuits, and ultra-high density memory circuits that utilize the electrochemical switching characteristics of these molecules in conjunction with novel patterning methods. We also discuss interconnect schemes that are capable of bridging the micrometre to submicrometre length scales of conventional patterning approaches to the near-molecular length scales of the ultra-dense memory circuits. Finally, we discuss some of the challenges associated with fabricated ultra-dense molecular electronic integrated circuits.

Power inverter with optical isolation

DOEpatents

Duncan, Paul G.; Schroeder, John Alan

2005-12-06

An optically isolated power electronic power conversion circuit that includes an input electrical power source, a heat pipe, a power electronic switch or plurality of interconnected power electronic switches, a mechanism for connecting the switch to the input power source, a mechanism for connecting comprising an interconnecting cable and/or bus bar or plurality of interconnecting cables and/or input bus bars, an optically isolated drive circuit connected to the switch, a heat sink assembly upon which the power electronic switch or switches is mounted, an output load, a mechanism for connecting the switch to the output load, the mechanism for connecting including an interconnecting cable and/or bus bar or plurality of interconnecting cables and/or output bus bars, at least one a fiber optic temperature sensor mounted on the heat sink assembly, at least one fiber optic current sensor mounted on the load interconnection cable and/or output bus bar, at least one fiber optic voltage sensor mounted on the load interconnection cable and/or output bus bar, at least one fiber optic current sensor mounted on the input power interconnection cable and/or input bus bar, and at least one fiber optic voltage sensor mounted on the input power interconnection cable and/or input bus bar.

Design of on-board Bluetooth wireless network system based on fault-tolerant technology

NASA Astrophysics Data System (ADS)

You, Zheng; Zhang, Xiangqi; Yu, Shijie; Tian, Hexiang

2007-11-01

In this paper, the Bluetooth wireless data transmission technology is applied in on-board computer system, to realize wireless data transmission between peripherals of the micro-satellite integrating electronic system, and in view of the high demand of reliability of a micro-satellite, a design of Bluetooth wireless network based on fault-tolerant technology is introduced. The reliability of two fault-tolerant systems is estimated firstly using Markov model, then the structural design of this fault-tolerant system is introduced; several protocols are established to make the system operate correctly, some related problems are listed and analyzed, with emphasis on Fault Auto-diagnosis System, Active-standby switch design and Data-Integrity process.

A large-area wireless power-transmission sheet using printed organic transistors and plastic MEMS switches.

PubMed

Sekitani, Tsuyoshi; Takamiya, Makoto; Noguchi, Yoshiaki; Nakano, Shintaro; Kato, Yusaku; Sakurai, Takayasu; Someya, Takao

2007-06-01

The electronics fields face serious problems associated with electric power; these include the development of ecologically friendly power-generation systems and ultralow-power-consuming circuits. Moreover, there is a demand for developing new power-transmission methods in the imminent era of ambient electronics, in which a multitude of electronic devices such as sensor networks will be used in our daily life to enhance security, safety and convenience. We constructed a sheet-type wireless power-transmission system by using state-of-the-art printing technologies using advanced electronic functional inks. This became possible owing to recent progress in organic semiconductor technologies; the diversity of chemical syntheses and processes on organic materials has led to a new class of organic semiconductors, dielectric layers and metals with excellent electronic functionalities. The new system directly drives electronic devices by transmitting power of the order of tens of watts without connectors, thereby providing an easy-to-use and reliable power source. As all of the components are manufactured on plastic films, it is easy to place the wireless power-transmission sheet over desks, floors, walls and any other location imaginable.

Diffused Silicon Transistors and Switches (1954-55): The Beginning of Integrated Circuit Technology

NASA Astrophysics Data System (ADS)

Holonyak, N.

2003-09-01

Silicon (Si) transistor and integrated circuit (IC) technology has grown so big, and become so important, that it is now hard to recognize where, apart from the invention of the transistor itself (Bardeen and Brattain, Dec 16, 1947), it had its origin. In spite of obvious differences in Ge and Si, in 1950-55 it was not evident in many laboratories, concentrating only on Ge, what form of Ge transistor (grown, alloyed, jet-etched, etc.) might be expected to prevail, with Si not even being considered (or being dismissed outright). What was the need for Si and, at the time, such a seemingly intractable peculiar new technology? The requirement on switching devices of low leakage, and thus the need to leave Ge in favor of Si, led directly in 1954-55 (Bell Telephone Laboratories, BTL) to the exploration of impurity-diffusion and metallization technology to realize Si transistors and p-n-p-n switches. This technology, a more or less ideal thin-layer technology that can be referenced from a single surface (and which indeed has proven to be basically invariant and constantly growing), led further to the discovery (1955) of the protective Si oxide, oxide masking and patterning, and the fundamental basis of the integrated circuit (i.e., device-to-device interconnection by patterned metallization across the oxide). We recount some of the exploratory diffused-impurity Si device development of 1954-55 at BTL, particularly the work in and near Moll's group, that helped to establish the basis for today's electronics. The Si diffused-impurity devices of 1954-55 are described, including work and data not previously reported or broadly known—in fact, much work and data (a new technology) that was carried across the Country to a place that became known as Silicon Valley. For further perspective, an appendix is included of independent early suggestions of Bardeen (Urbana notebook, Feb 1952) to leave Ge in favor of diffused Si devices.

Hot electrons injection in carbon nanotubes under the influence of quasi-static ac-field

NASA Astrophysics Data System (ADS)

Amekpewu, M.; Mensah, S. Y.; Musah, R.; Mensah, N. G.; Abukari, S. S.; Dompreh, K. A.

2016-07-01

The theory of hot electrons injection in carbon nanotubes (CNTs) where both dc electric field (Ez), and a quasi-static ac field exist simultaneously (i.e. when the frequency ω of ac field is much less than the scattering frequency v (ω ⪡ v or ωτ ⪡ 1, v =τ-1) where τ is relaxation time) is studied. The investigation is done theoretically by solving semi-classical Boltzmann transport equation with and without the presence of the hot electrons source to derive the current densities. Plots of the normalized current density versus dc field (Ez) applied along the axis of the CNTs in the presence and absence of hot electrons reveal ohmic conductivity initially and finally negative differential conductivity (NDC) provided ωτ ⪡ 1 (i.e. quasi- static case). With strong enough axial injection of the hot electrons, there is a switch from NDC to positive differential conductivity (PDC) about Ez ≥ 75 kV / cm and Ez ≥ 140 kV / cm for a zigzag CNT and an armchair CNT respectively. Thus, the most important tough problem for NDC region which is the space charge instabilities can be suppressed due to the switch from the NDC behaviour to the PDC behaviour predicting a potential generation of terahertz radiations whose applications are relevance in current-day technology, industry, and research.

An Approach to Average Modeling and Simulation of Switch-Mode Systems

ERIC Educational Resources Information Center

Abramovitz, A.

2011-01-01

This paper suggests a pedagogical approach to teaching the subject of average modeling of PWM switch-mode power electronics systems through simulation by general-purpose electronic circuit simulators. The paper discusses the derivation of PSPICE/ORCAD-compatible average models of the switch-mode power stages, their software implementation, and…

Thermal Peak Management Using Organic Phase Change Materials for Latent Heat Storage in Electronic Applications

PubMed Central

Maxa, Jacob; Novikov, Andrej; Nowottnick, Mathias

2017-01-01

Modern high power electronics devices consists of a large amount of integrated circuits for switching and supply applications. Beside the benefits, the technology exhibits the problem of an ever increasing power density. Nowadays, heat sinks that are directly mounted on a device, are used to reduce the on-chip temperature and dissipate the thermal energy to the environment. This paper presents a concept of a composite coating for electronic components on printed circuit boards or electronic assemblies that is able to buffer a certain amount of thermal energy, dissipated from a device. The idea is to suppress temperature peaks in electronic components during load peaks or electronic shorts, which otherwise could damage or destroy the device, by using a phase change material to buffer the thermal energy. The phase change material coating could be directly applied on the chip package or the PCB using different mechanical retaining jigs.

Superstructures of chiral nematic microspheres as all-optical switchable distributors of light

PubMed Central

Aβhoff, Sarah J.; Sukas, Sertan; Yamaguchi, Tadatsugu; Hommersom, Catharina A.; Le Gac, Séverine; Katsonis, Nathalie

2015-01-01

Light technology is based on generating, detecting and controlling the wavelength, polarization and direction of light. Emerging applications range from electronics and telecommunication to health, defence and security. In particular, data transmission and communication technologies are currently asking for increasingly complex and fast devices, and therefore there is a growing interest in materials that can be used to transmit light and also to control the distribution of light in space and time. Here, we design chiral nematic microspheres whose shape enables them to reflect light of different wavelengths and handedness in all directions. Assembled in organized hexagonal superstructures, these microspheres of well-defined sizes communicate optically with high selectivity for the colour and chirality of light. Importantly, when the microspheres are doped with photo-responsive molecular switches, their chiroptical communication can be tuned, both gradually in wavelength and reversibly in polarization. Since the kinetics of the “on” and “off” switching can be adjusted by molecular engineering of the dopants and because the photonic cross-communication is selective with respect to the chirality of the incoming light, these photo-responsive microspheres show potential for chiroptical all-optical distributors and switches, in which wavelength, chirality and direction of the reflected light can be controlled independently and reversibly. PMID:26400584

Advanced optical components for next-generation photonic networks

NASA Astrophysics Data System (ADS)

Yoo, S. J. B.

2003-08-01

Future networks will require very high throughput, carrying dominantly data-centric traffic. The role of Photonic Networks employing all-optical systems will become increasingly important in providing scalable bandwidth, agile reconfigurability, and low-power consumptions in the future. In particular, the self-similar nature of data traffic indicates that packet switching and burst switching will be beneficial in the Next Generation Photonic Networks. While the natural conclusion is to pursue Photonic Packet Switching and Photonic Burst Switching systems, there are significant challenges in realizing such a system due to practical limitations in optical component technologies. Lack of a viable all-optical memory technology will continue to drive us towards exploring rapid reconfigurability in the wavelength domain. We will introduce and discuss the advanced optical component technologies behind the Photonic Packet Routing system designed and demonstrated at UC Davis. The system is capable of packet switching and burst switching, as well as circuit switching with 600 psec switching speed and scalability to 42 petabit/sec aggregated switching capacity. By utilizing a combination of rapidly tunable wavelength conversion and a uniform-loss cyclic frequency (ULCF) arrayed waveguide grating router (AWGR), the system is capable of rapidly switching the packets in wavelength, time, and space domains. The label swapping module inside the Photonic Packet Routing system containing a Mach-Zehnder wavelength converter and a narrow-band fiber Bragg-grating achieves all-optical label swapping with optical 2R (potentially 3R) regeneration while maintaining optical transparency for the data payload. By utilizing the advanced optical component technologies, the Photonic Packet Routing system successfully demonstrated error-free, cascaded, multi-hop photonic packet switching and routing with optical-label swapping. This paper will review the advanced optical component technologies and their role in the Next Generation Photonic Networks.

The development of high-voltage repetitive low-jitter corona stabilized triggered switch

NASA Astrophysics Data System (ADS)

Geng, Jiuyuan; Yang, Jianhua; Cheng, Xinbing; Yang, Xiao; Chen, Rong

2018-04-01

The high-power switch plays an important part in a pulse power system. With the trend of pulse power technology toward modularization, miniaturization, and accuracy control, higher requirements on electrical trigger and jitter of the switch have been put forward. A high-power low-jitter corona-stabilized triggered switch (CSTS) is designed in this paper. This kind of CSTS is based on corona stabilized mechanism, and it can be used as a main switch of an intense electron-beam accelerator (IEBA). Its main feature was the use of an annular trigger electrode instead of a traditional needle-like trigger electrode, taking main and side trigger rings to fix the discharging channels and using SF6/N2 gas mixture as its operation gas. In this paper, the strength of the local field enhancement was changed by a trigger electrode protrusion length Dp. The differences of self-breakdown voltage and its stability, delay time jitter, trigger requirements, and operation range of the switch were compared. Then the effect of different SF6/N2 mixture ratio on switch performance was explored. The experimental results show that when the SF6 is 15% with the pressure of 0.2 MPa, the hold-off voltage of the switch is 551 kV, the operating range is 46.4%-93.5% of the self-breakdown voltage, the jitter is 0.57 ns, and the minimum trigger voltage requirement is 55.8% of the peak. At present, the CSTS has been successfully applied to an IEBA for long time operation.

The development of high-voltage repetitive low-jitter corona stabilized triggered switch.

PubMed

Geng, Jiuyuan; Yang, Jianhua; Cheng, Xinbing; Yang, Xiao; Chen, Rong

2018-04-01

The high-power switch plays an important part in a pulse power system. With the trend of pulse power technology toward modularization, miniaturization, and accuracy control, higher requirements on electrical trigger and jitter of the switch have been put forward. A high-power low-jitter corona-stabilized triggered switch (CSTS) is designed in this paper. This kind of CSTS is based on corona stabilized mechanism, and it can be used as a main switch of an intense electron-beam accelerator (IEBA). Its main feature was the use of an annular trigger electrode instead of a traditional needle-like trigger electrode, taking main and side trigger rings to fix the discharging channels and using SF 6 /N 2 gas mixture as its operation gas. In this paper, the strength of the local field enhancement was changed by a trigger electrode protrusion length Dp. The differences of self-breakdown voltage and its stability, delay time jitter, trigger requirements, and operation range of the switch were compared. Then the effect of different SF 6 /N 2 mixture ratio on switch performance was explored. The experimental results show that when the SF 6 is 15% with the pressure of 0.2 MPa, the hold-off voltage of the switch is 551 kV, the operating range is 46.4%-93.5% of the self-breakdown voltage, the jitter is 0.57 ns, and the minimum trigger voltage requirement is 55.8% of the peak. At present, the CSTS has been successfully applied to an IEBA for long time operation.

Quantum coherent π-electron rotations in a non-planar chiral molecule induced by using a linearly polarized UV laser pulse

NASA Astrophysics Data System (ADS)

Mineo, Hirobumi; Fujimura, Yuichi

2015-06-01

We propose an ultrafast quantum switching method of π-electron rotations, which are switched among four rotational patterns in a nonplanar chiral aromatic molecule (P)-2,2’- biphenol and perform the sequential switching among four rotational patterns which are performed by the overlapped pump-dump laser pulses. Coherent π-electron dynamics are generated by applying the linearly polarized UV pulse laser to create a pair of coherent quasidegenerated excited states. We also plot the time-dependent π-electron ring current, and discussed ring current transfer between two aromatic rings.

Fractal model of polarization switching kinetics in ferroelectrics under nonequilibrium conditions of electron irradiation

NASA Astrophysics Data System (ADS)

Maslovskaya, A. G.; Barabash, T. K.

2018-03-01

The paper presents the results of the fractal and multifractal analysis of polarization switching current in ferroelectrics under electron irradiation, which allows statistical memory effects to be estimated at dynamics of domain structure. The mathematical model of formation of electron beam-induced polarization current in ferroelectrics was suggested taking into account the fractal nature of domain structure dynamics. In order to realize the model the computational scheme was constructed using the numerical solution approximation of fractional differential equation. Evidences of electron beam-induced polarization switching process in ferroelectrics were specified at a variation of control model parameters.

Applications and research on nano power electronics: an adventure beyond quantum electronics

NASA Astrophysics Data System (ADS)

Chakraborty, Arindam; Emadi, Ali

2005-06-01

This paper is a roadmap to the exhaustive role of the newly emerging field of nanotechnology in various application and research areas. Some of the today's important topics are plasma, dielectric layer semiconductor, and carbon nanoparticle based technologies. Carbon nanotubes are very useful for the purpose of fabricating nano opto power devices. The basic concept behind tunneling of electrons has been utilized to define another scope of this technology, and thus came many quantum scale tunneling devices and elements. Fabrication of crystal semiconductors of high quality along with oxides of nano aspect would give rise to superior device performance and find applications such as LEDs, LASER, VLSI technology and also in highly efficient solar cells. Many nano-research based organizations are fully devoted to develop nano power cells, which would give birth to new battery cells, tunneling devises, with high power quality, longer lives, and higher activation rates. Different electronics industries as well as the military organizations would be largely benefited due to this major component and system design ideas of 'Smart Power' technologies. The contribution of nano scale power electronics would be realized in various fields like switching devices, electromechanical systems and quantum science. Such a sophisticated technology will have great impact on the modernization of robotics; space systems, automotive systems and many other fields. The highly emerging field of nanomedicine according to specialists would bring a dramatic revolution in the present century. However nanomedicine is nothing but an integration of biology, medicine and technology. Thermoelectric materials as been referred earlier also are used in case of implantable medical equipments for generation of electric power sufficient for those equipments.

Recent advances in degradable lactide-based shape-memory polymers.

PubMed

Balk, Maria; Behl, Marc; Wischke, Christian; Zotzmann, Jörg; Lendlein, Andreas

2016-12-15

Biodegradable polymers are versatile polymeric materials that have a high potential in biomedical applications avoiding subsequent surgeries to remove, for example, an implanted device. In the past decade, significant advances have been achieved with poly(lactide acid) (PLA)-based materials, as they can be equipped with an additional functionality, that is, a shape-memory effect (SME). Shape-memory polymers (SMPs) can switch their shape in a predefined manner upon application of a specific external stimulus. Accordingly, SMPs have a high potential for applications ranging from electronic engineering, textiles, aerospace, and energy to biomedical and drug delivery fields based on the perspectives of new capabilities arising with such materials in biomedicine. This study summarizes the progress in SMPs with a particular focus on PLA, illustrates the design of suitable homo- and copolymer structures as well as the link between the (co)polymer structure and switching functionality, and describes recent advantages in the implementation of novel switching phenomena into SMP technology. Copyright © 2016 Elsevier B.V. All rights reserved.

Influence of Thermal Annealing Treatment on Bipolar Switching Properties of Vanadium Oxide Thin-Film Resistance Random-Access Memory Devices

NASA Astrophysics Data System (ADS)

Chen, Kai-Huang; Cheng, Chien-Min; Kao, Ming-Cheng; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Wu, Sean; Su, Feng-Yi

2017-04-01

The bipolar switching properties and electrical conduction mechanism of vanadium oxide thin-film resistive random-access memory (RRAM) devices obtained using a rapid thermal annealing (RTA) process have been investigated in high-resistive status/low-resistive status (HRS/LRS) and are discussed herein. In addition, the resistance switching properties and quality improvement of the vanadium oxide thin-film RRAM devices were measured by x-ray diffraction (XRD) analysis, x-ray photoelectron spectrometry (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM), and current-voltage ( I- V) measurements. The activation energy of the hopping conduction mechanism in the devices was investigated based on Arrhenius plots in HRS and LRS. The hopping conduction distance and activation energy barrier were obtained as 12 nm and 45 meV, respectively. The thermal annealing process is recognized as a candidate method for fabrication of thin-film RRAM devices, being compatible with integrated circuit technology for nonvolatile memory devices.

Computer Access. Tech Use Guide: Using Computer Technology.

ERIC Educational Resources Information Center

Council for Exceptional Children, Reston, VA. Center for Special Education Technology.

One of nine brief guides for special educators on using computer technology, this guide focuses on access including adaptations in input devices, output devices, and computer interfaces. Low technology devices include "no-technology" devices (usually modifications to existing devices), simple switches, and multiple switches. High technology input…

Micro-fabrication method of graphite mesa microdevices based on optical lithography technology

NASA Astrophysics Data System (ADS)

Zhang, Cheng; Wen, Donghui; Zhu, Huamin; Zhang, Xiaorui; Yang, Xing; Shi, Yunsheng; Zheng, Tianxiang

2017-12-01

Graphite mesa microdevices have incommensurate contact nanometer interfaces, superlubricity, high-speed self-retraction, and other characteristics, which have potential applications in high-performance oscillators and micro-scale switches, memory devices, and gyroscopes. However, the current method of fabricating graphite mesa microdevices is mainly based on high-cost, low efficiency electron beam lithography technology. In this paper, the processing technologies of graphite mesa microdevices with various shapes and sizes were investigated by a low-cost micro-fabrication method, which was mainly based on optical lithography technology. The characterization results showed that the optical lithography technology could realize a large-area of patterning on the graphite surface, and the graphite mesa microdevices, which have a regular shape, neat arrangement, and high verticality could be fabricated in large batches through optical lithography technology. The experiments and analyses showed that the graphite mesa microdevices fabricated through optical lithography technology basically have the same self-retracting characteristics as those fabricated through electron beam lithography technology, and the maximum size of the graphite mesa microdevices with self-retracting phenomenon can reach 10 µm  ×  10 µm. Therefore, the proposed method of this paper can realize the high-efficiency and low-cost processing of graphite mesa microdevices, which is significant for batch fabrication and application of graphite mesa microdevices.

New secondary batteries utilizing electronically conductive polymer cathodes

NASA Technical Reports Server (NTRS)

Martin, Charles R.; White, Ralph E.

1989-01-01

The objectives of this project are to characterize the transport properties in electronically conductive polymers and to assess the utility of these films as cathodes in lithium/polymer secondary batteries. During this research period, progress has been made in a literature survey of the historical background, methods of preparation, the physical and chemical properties, and potential technological applications of polythiophene. Progress has also been made in the characterization of polypyrrole flat films and fibrillar films. Cyclic voltammetry and potential step chronocoulometry were used to gain information on peak currents and potentials switching reaction rates, charge capacity, and charge retention. Battery charge/discharge studies were also performed.

Realizing what's essential: a case study on integrating electronic journal management into a print-centric technical services department.

PubMed

Dollar, Daniel M; Gallagher, John; Glover, Janis; Marone, Regina Kenny; Crooker, Cynthia

2007-04-01

To support migration from print to electronic resources, the Cushing/Whitney Medical Library at Yale University reorganized its Technical Services Department to focus on managing electronic resources. The library hired consultants to help plan the changes and to present recommendations for integrating electronic resource management into every position. The library task force decided to focus initial efforts on the periodical collection. To free staff time to devote to electronic journals, most of the print subscriptions were switched to online only and new workflows were developed for e-journals. Staff learned new responsibilities such as activating e-journals, maintaining accurate holdings information in the online public access catalog and e-journals database ("electronic shelf reading"), updating the link resolver knowledgebase, and troubleshooting. All of the serials team members now spend significant amounts of time managing e-journals. The serials staff now spends its time managing the materials most important to the library's clientele (e-journals and databases). The team's proactive approach to maintenance work and rapid response to reported problems should improve patrons' experiences using e-journals. The library is taking advantage of new technologies such as an electronic resource management system, and library workflows and procedures will continue to evolve as technology changes.

Realizing what's essential: a case study on integrating electronic journal management into a print-centric technicalservices department

PubMed Central

Dollar, Daniel M.; Gallagher, John; Glover, Janis; Marone, Regina Kenny; Crooker, Cynthia

2007-01-01

Objective: To support migration from print to electronic resources, the Cushing/Whitney Medical Library at Yale University reorganized its Technical Services Department to focus on managing electronic resources. Methods: The library hired consultants to help plan the changes and to present recommendations for integrating electronic resource management into every position. The library task force decided to focus initial efforts on the periodical collection. To free staff time to devote to electronic journals, most of the print subscriptions were switched to online only and new workflows were developed for e-journals. Results: Staff learned new responsibilities such as activating e-journals, maintaining accurate holdings information in the online public access catalog and e-journals database (“electronic shelf reading”), updating the link resolver knowledgebase, and troubleshooting. All of the serials team members now spend significant amounts of time managing e-journals. Conclusions: The serials staff now spends its time managing the materials most important to the library's clientele (e-journals and databases). The team's proactive approach to maintenance work and rapid response to reported problems should improve patrons' experiences using e-journals. The library is taking advantage of new technologies such as an electronic resource management system, and library workflows and procedures will continue to evolve as technology changes. PMID:17443247

Call for Papers: Photonics in Switching

NASA Astrophysics Data System (ADS)

Wosinska, Lena; Glick, Madeleine

2006-04-01

Call for Papers: Photonics in Switching

Guest Editors:

Lena Wosinska, Royal Institute of Technology (KTH) / ICT Sweden Madeleine Glick, Intel Research, Cambridge, UK

Scope of Submission

• WDM node architectures
• Novel device technologies enabling photonics in switching, such as optical switch fabrics, optical memory, and wavelength conversion
• Routing protocols
• WDM switching and routing
• Quality of service
• Performance measurement and evaluation
• Next-generation optical networks: architecture, signaling, and control
• Traffic measurement and field trials
• Optical burst and packet switching
• OBS/OPS node architectures
• Burst/Packet scheduling and routing algorithms
• Contention resolution/avoidance strategies
• Services and applications for OBS/OPS (e.g., grid networks, storage-area networks, etc.)
• Burst assembly and ingress traffic shaping
• Hybrid OBS/TDM or OBS/wavelength routing

Manuscript Submission

Electronically-Scanned Pressure Sensors

NASA Technical Reports Server (NTRS)

Coe, C. F.; Parra, G. T.; Kauffman, R. C.

1984-01-01

Sensors not pneumatically switched. Electronic pressure-transducer scanning system constructed in modular form. Pressure transducer modules and analog to digital converter module small enough to fit within cavities of average-sized wind-tunnel models. All switching done electronically. Temperature controlled environment maintained within sensor modules so accuracy maintained while ambient temperature varies.

Electronic Computer and Switching Systems Specialist (AFSC 30554).

ERIC Educational Resources Information Center

Air Univ., Gunter AFS, Ala. Extension Course Inst.

This course is intended to train Air Force personnel to become electronic computer and switching systems specialists. One part of the course consists of a three-volume career development course. Topics are maintenance orientation (15 hours), electronic principles and digital techniques (87 hours), and systems maintenance (51 hours). Each volume…

An optical switch

DOEpatents

Christophorou, L.G.; Hunter, S.R.

1987-04-30

The invention is a gas mixture for a diffuse discharge switch having an electron attaching gas wherein electron attachment is brought about by indirect excitation of molecules to long live states by exposure to laser light. 3 figs.

Solid-state active switch matrix for high energy, moderate power battery systems

DOEpatents

Deal, Larry; Paris, Peter; Ye, Changqing

2016-06-07

A battery management system employs electronic switches and capacitors. No traditional cell-balancing resistors are used. The BMS electronically switches individual cells into and out of a module of cells in order to use the maximum amount of energy available in each cell and to completely charge and discharge each cell without overcharging or under-discharging.

47 CFR 32.5999 - General.

Code of Federal Regulations, 2014 CFR

2014-10-01

... switching expense 6210 Non-digital switching expense 6211 Digital electronic switching expense 6212... Circuit equipment expense 6232 Information origination/termination expense 6310 Station apparatus expense...

47 CFR 32.5999 - General.

Code of Federal Regulations, 2012 CFR

2012-10-01

... switching expense 6210 Non-digital switching expense 6211 Digital electronic switching expense 6212... Circuit equipment expense 6232 Information origination/termination expense 6310 Station apparatus expense...

47 CFR 32.5999 - General.

Code of Federal Regulations, 2013 CFR

2013-10-01

... switching expense 6210 Non-digital switching expense 6211 Digital electronic switching expense 6212... Circuit equipment expense 6232 Information origination/termination expense 6310 Station apparatus expense...

Single Molecule Electronics and Devices

PubMed Central

Tsutsui, Makusu; Taniguchi, Masateru

2012-01-01

The manufacture of integrated circuits with single-molecule building blocks is a goal of molecular electronics. While research in the past has been limited to bulk experiments on self-assembled monolayers, advances in technology have now enabled us to fabricate single-molecule junctions. This has led to significant progress in understanding electron transport in molecular systems at the single-molecule level and the concomitant emergence of new device concepts. Here, we review recent developments in this field. We summarize the methods currently used to form metal-molecule-metal structures and some single-molecule techniques essential for characterizing molecular junctions such as inelastic electron tunnelling spectroscopy. We then highlight several important achievements, including demonstration of single-molecule diodes, transistors, and switches that make use of electrical, photo, and mechanical stimulation to control the electron transport. We also discuss intriguing issues to be addressed further in the future such as heat and thermoelectric transport in an individual molecule. PMID:22969345

Conduction Mechanism and Improved Endurance in HfO2-Based RRAM with Nitridation Treatment

NASA Astrophysics Data System (ADS)

Yuan, Fang-Yuan; Deng, Ning; Shih, Chih-Cheng; Tseng, Yi-Ting; Chang, Ting-Chang; Chang, Kuan-Chang; Wang, Ming-Hui; Chen, Wen-Chung; Zheng, Hao-Xuan; Wu, Huaqiang; Qian, He; Sze, Simon M.

2017-10-01

A nitridation treatment technology with a urea/ammonia complex nitrogen source improved resistive switching property in HfO2-based resistive random access memory (RRAM). The nitridation treatment produced a high performance and reliable device which results in superior endurance (more than 109 cycles) and a self-compliance effect. Thus, the current conduction mechanism changed due to defect passivation by nitrogen atoms in the HfO2 thin film. At a high resistance state (HRS), it transferred to Schottky emission from Poole-Frenkel in HfO2-based RRAM. At low resistance state (LRS), the current conduction mechanism was space charge limited current (SCLC) after the nitridation treatment, which suggests that the nitrogen atoms form Hf-N-Ox vacancy clusters (Vo +) which limit electron movement through the switching layer.

Spacecraft in switch matrix for wide band service applicatons in 30/20 GHz communications satellite systems

NASA Technical Reports Server (NTRS)

Cory, B. J.

1982-01-01

Bandwidth, switching speed, off-state isolation, and reliability over a ten-year mission were factors in determining the optimum available technology for satellite communications switching in 1982. A proof of concept model for a 20 x 20 coupled crossbar switch matrix designed with FET devices for microwave switching and with high speed CMOS LIS for switch crosspoint addressing was fabricated and tested. Results show the design is feasible for application in a multichannel SS-TDMA communications system. Expandibility can readily be achieved with this design. A conceptual design study for a 100 x 100 switch matrix utilizing a coupled crossbar architecture implemented with a monolithic microwave integrated circuits revealed technology needs for high capacity switch matrices.

LED lamp power management system and method

DOEpatents

Gaines, James; Clauberg, Bernd; Van Erp, Josephus A. M.

2013-03-19

An LED lamp power management system and method including an LED lamp having an LED controller 58; a plurality of LED channels 60 operably connected to the LED controller 58, each of the plurality of LED channels 60 having a channel switch 62 in series with at least one shunted LED circuit 83, the shunted LED circuit 83 having a shunt switch 68 in parallel with an LED source 80. The LED controller 58 reduces power loss in one of the channel switch 62 and the shunt switch 68 when LED lamp electronics power loss (P.sub.loss) exceeds an LED lamp electronics power loss limit (P.sub.lim); and each of the channel switches 62 receives a channel switch control signal 63 from the LED controller 58 and each of the shunt switches 68 receives a shunt switch control signal 69 from the LED controller 58.

Graphene-MoS2 Heterojunctions for High-Speed Opto-electronics

NASA Astrophysics Data System (ADS)

Horng, Jason; Wang, Alex; Wang, Danqing; Li, Alexander Shengzhi; Wang, Feng

Heterostructures consisting of two-dimensional materials has drawn significant attention in different research fields owning to their novel electronic states and potential applications. Transmitting information with transition metal dichalcogenides(TMDC) electro-optical modulator switch interconnect is of great interest for technological applications. However, their high-speed applications have been slowed by their intrinsically high resistivity as well as the difficulties in making optimized metal contacts. Here, we present a new strategy by using graphene as a tunable contact to two-dimensional semiconductors to explore possible applications in high-speed opto-electronics. We will present an optical study to provide better understanding of band alignment in graphene/MoS2 heterostructures and a demonstration of high-speed opto-electronics based on these heterostructures. The result shows the new scheme could have potential in both opto-modulators and optical sensing applications.

Application of an access technology delivery protocol to two children with cerebral palsy.

PubMed

Mumford, Leslie; Chau, Tom

2015-07-14

This study further delineates the merits and limitations of the Access Technology Delivery Protocol (ATDP) through its application to two children with severe disabilities. We conducted mixed methods case studies to demonstrate the ATDP with two children with no reliable means of access to an external device. Evaluations of response efficiency, satisfaction, goal attainment, technology use and participation were made after 8 and 16 weeks of training with custom access technologies. After 16 weeks, one child's switch offered improved response efficiency, high teacher satisfaction and increased participation. The other child's switch resulted in improved satisfaction and switch effectiveness but lower overall efficiency. The latter child was no longer using his switch by the end of the study. These contrasting findings indicate that changes to any contextual factors that may impact the user's switch performance should mandate a reassessment of the access pathway. Secondly, it is important to ensure that individuals who will be responsible for switch training be identified at the outset and engaged throughout the ATDP. Finally, the ATDP should continue to be tested with individuals with severe disabilities to build an evidence base for the delivery of response efficient access solutions. Implications for Rehabilitation A data-driven, comprehensive access technology delivery protocol for children with complex communication needs could help to mitigate technology abandonment. Successful adoption of an access technology requires personalized design, training of the technology user, the teaching staff, the caregivers and other communication partners, and integration with functional activities.

A 10Gbps optical burst switching network incorporating ultra-fast (5ns) wavelength switched tunable laser sources

NASA Astrophysics Data System (ADS)

Ryan, Neil; Todd, Michael; Farrell, Tom; Lavin, Adrian; Rigole, Pierre-Jean; Corbett, Brian; Roycroft, Brendan; Engelstaedter, Jan-Peter

2017-11-01

This paper outlines the development of a prototype optical burst mode switching network based upon a star topology, the ultimate application of which could be as a transparent payload processor onboard satellite repeaters. The network architecture incorporates multiple tunable laser sources, burst mode receivers and a passive optical router (Arrayed Waveguide Grating). Each tunable optical signal should carry >=10Gbps and be capable of wavelength switching in c. 5ns timescales. Two monolithic tunable laser types, based upon different technologies, will be utilised: a Slotted Fabry Perot laser (a Fabry Perot laser with slots added in order to introduce controlled cavity perturbations); and a Modulated Grating Y-Branch Laser (MGY: a widely tunable, multi-section device similar to the DBR laser). While the Slotted Fabry Perot laser is expected to achieve the required switching times, it is an immature technology not yet capable of achieving tunability over 80 ITU channels from a single chip. The MGY device is a more mature technology and has full C-band ITU channel coverage, but is not capable of the required short switching times. Hence, in order to facilitate the integration of this more mature technology into the prototype breadboard with the requisite switching time capabilities, a system of `dual laser' transmitters is being developed to enable data transmission from one MGY laser while the other switches and vice-versa. This work is being performed under ESA contract AO 1-5025/06/NL/PM, Optical Technologies for Ultra - fast Processing.

On-Board Switching and Routing Advanced Technology Study

NASA Technical Reports Server (NTRS)

Yegenoglu, F.; Inukai, T.; Kaplan, T.; Redman, W.; Mitchell, C.

1998-01-01

Future satellite communications is expected to be fully integrated into National and Global Information Infrastructures (NII/GII). These infrastructures will carry multi gigabit-per-second data rates, with integral switching and routing of constituent data elements. The satellite portion of these infrastructures must, therefore, be more than pipes through the sky. The satellite portion will also be required to perform very high speed routing and switching of these data elements to enable efficient broad area coverage to many home and corporate users. The technology to achieve the on-board switching and routing must be selected and developed specifically for satellite application within the next few years. This report presents evaluation of potential technologies for on-board switching and routing applications.

Fast superconducting magnetic field switch

DOEpatents

Goren, Yehuda; Mahale, Narayan K.

1996-01-01

The superconducting magnetic switch or fast kicker magnet is employed with electron stream or a bunch of electrons to rapidly change the direction of flow of the electron stream or bunch of electrons. The apparatus employs a beam tube which is coated with a film of superconducting material. The tube is cooled to a temperature below the superconducting transition temperature and is subjected to a constant magnetic field which is produced by an external dc magnet. The magnetic field produced by the dc magnet is less than the critical field for the superconducting material, thus, creating a Meissner Effect condition. A controllable fast electromagnet is used to provide a magnetic field which supplements that of the dc magnet so that when the fast magnet is energized the combined magnetic field is now greater that the critical field and the superconducting material returns to its normal state allowing the magnetic field to penetrate the tube. This produces an internal field which effects the direction of motion and of the electron stream or electron bunch. The switch can also operate as a switching mechanism for charged particles.

Fast superconducting magnetic field switch

DOEpatents

Goren, Y.; Mahale, N.K.

1996-08-06

The superconducting magnetic switch or fast kicker magnet is employed with electron stream or a bunch of electrons to rapidly change the direction of flow of the electron stream or bunch of electrons. The apparatus employs a beam tube which is coated with a film of superconducting material. The tube is cooled to a temperature below the superconducting transition temperature and is subjected to a constant magnetic field which is produced by an external dc magnet. The magnetic field produced by the dc magnet is less than the critical field for the superconducting material, thus, creating a Meissner Effect condition. A controllable fast electromagnet is used to provide a magnetic field which supplements that of the dc magnet so that when the fast magnet is energized the combined magnetic field is now greater that the critical field and the superconducting material returns to its normal state allowing the magnetic field to penetrate the tube. This produces an internal field which effects the direction of motion and of the electron stream or electron bunch. The switch can also operate as a switching mechanism for charged particles. 6 figs.

Switching adhesion forces by crossing the metal–insulator transition in Magnéli-type vanadium oxide crystals

PubMed Central

Klemm, Matthias; Horn, Siegfried; Woydt, Mathias

2011-01-01

Summary Magnéli-type vanadium oxides form the homologous series VnO2 n -1 and exhibit a temperature-induced, reversible metal–insulator first order phase transition (MIT). We studied the change of the adhesion force across the transition temperature between the cleavage planes of various vanadium oxide Magnéli phases (n = 3 … 7) and spherical titanium atomic force microscope (AFM) tips by systematic force–distance measurements with a variable-temperature AFM under ultrahigh vacuum conditions (UHV). The results show, for all investigated samples, that crossing the transition temperatures leads to a distinct change of the adhesion force. Low adhesion corresponds consistently to the metallic state. Accordingly, the ability to modify the electronic structure of the vanadium Magnéli phases while maintaining composition, stoichiometry and crystallographic integrity, allows for relating frictional and electronic material properties at the nano scale. This behavior makes the vanadium Magnéli phases interesting candidates for technology, e.g., as intelligent devices or coatings where switching of adhesion or friction is desired. PMID:21977416

Valley switch in a graphene superlattice due to pseudo-Andreev reflection

NASA Astrophysics Data System (ADS)

Beenakker, C. W. J.; Gnezdilov, N. V.; Dresselhaus, E.; Ostroukh, V. P.; Herasymenko, Y.; Adagideli, I.; Tworzydło, J.

2018-06-01

Dirac electrons in graphene have a valley degree of freedom that is being explored as a carrier of information. In that context of "valleytronics" one seeks to coherently manipulate the valley index. Here, we show that reflection from a superlattice potential can provide a valley switch: Electrons approaching a pristine-graphene-superlattice-graphene interface near normal incidence are reflected in the opposite valley. We identify the topological origin of this valley switch, by mapping the problem onto that of Andreev reflection from a topological superconductor, with the electron-hole degree of freedom playing the role of the valley index. The valley switch is ideal at a symmetry point of the superlattice potential, but remains close to 100% in a broad parameter range.

Realization of the Switching Mechanism in Resistance Random Access Memory™ Devices: Structural and Electronic Properties Affecting Electron Conductivity in a Hafnium Oxide-Electrode System Through First-Principles Calculations

NASA Astrophysics Data System (ADS)

Aspera, Susan Meñez; Kasai, Hideaki; Kishi, Hirofumi; Awaya, Nobuyoshi; Ohnishi, Shigeo; Tamai, Yukio

2013-01-01

The resistance random access memory (RRAM™) device, with its electrically induced nanoscale resistive switching capacity, has attracted considerable attention as a future nonvolatile memory device. Here, we propose a mechanism of switching based on an oxygen vacancy migration-driven change in the electronic properties of the transition-metal oxide film stimulated by set pulse voltages. We used density functional theory-based calculations to account for the effect of oxygen vacancies and their migration on the electronic properties of HfO2 and Ta/HfO2 systems, thereby providing a complete explanation of the RRAM™ switching mechanism. Furthermore, computational results on the activation energy barrier for oxygen vacancy migration were found to be consistent with the set and reset pulse voltage obtained from experiments. Understanding this mechanism will be beneficial to effectively realizing the materials design in these devices.

Organization of the channel-switching process in parallel computer systems based on a matrix optical switch

NASA Technical Reports Server (NTRS)

Golomidov, Y. V.; Li, S. K.; Popov, S. A.; Smolov, V. B.

1986-01-01

After a classification and analysis of electronic and optoelectronic switching devices, the design principles and structure of a matrix optical switch is described. The switching and pair-exclusion operations in this type of switch are examined, and a method for the optical switching of communication channels is elaborated. Finally, attention is given to the structural organization of a parallel computer system with a matrix optical switch.

Partial spin absorption induced magnetization switching and its voltage-assisted improvement in an asymmetrical all spin logic device at the mesoscopic scale

NASA Astrophysics Data System (ADS)

Zhang, Yue; Zhang, Zhizhong; Wang, Lezhi; Nan, Jiang; Zheng, Zhenyi; Li, Xiang; Wong, Kin; Wang, Yu; Klein, Jacques-Olivier; Khalili Amiri, Pedram; Zhang, Youguang; Wang, Kang L.; Zhao, Weisheng

2017-07-01

Beyond memory and storage, future logic applications put forward higher requirements for electronic devices. All spin logic devices (ASLDs) have drawn exceptional interest as they utilize pure spin current instead of charge current, which could promise ultra-low power consumption. However, relatively low efficiencies of spin injection, transport, and detection actually impede high-speed magnetization switching and challenge perspectives of ASLD. In this work, we study partial spin absorption induced magnetization switching in asymmetrical ASLD at the mesoscopic scale, in which the injector and detector have the nano-fabrication compatible device size (>100 nm) and their contact areas are different. The enlarged contact area of the detector is conducive to the spin current absorption, and the contact resistance difference between the injector and the detector can decrease the spin current backflow. Rigorous spin circuit modeling and micromagnetic simulations have been carried out to analyze the electrical and magnetic features. The results show that, at the fabrication-oriented technology scale, the ferromagnetic layer can hardly be switched by geometrically partial spin current absorption. The voltage-controlled magnetic anisotropy (VCMA) effect has been applied on the detector to accelerate the magnetization switching by modulating magnetic anisotropy of the ferromagnetic layer. With a relatively high VCMA coefficient measured experimentally, a voltage of 1.68 V can assist the whole magnetization switching within 2.8 ns. This analysis and improving approach will be of significance for future low-power, high-speed logic applications.

Organic Materials For Optical Switching

NASA Technical Reports Server (NTRS)

Cardelino, Beatriz H.

1993-01-01

Equations predict properties of candidate materials. Report presents results of theoretical study of nonlinear optical properties of organic materials. Such materials used in optical switching devices for computers and telecommunications, replacing electronic switches. Optical switching potentially offers extremely high information throughout in compact hardware.

NASA Helps Keep the Light Burning for the Saturn Car Company

NASA Technical Reports Server (NTRS)

2003-01-01

The Saturn Electronics & Engineering, Inc. (Saturn) facility in Marks, Miss., that produces lamp assemblies was experiencing itermittent problems with its automotive under the hood lamps. After numerous testing and engineering efforts, technicians could not pin down the root of the problem. So Saturn contacted the NASA Technology Assistance Program (TAP) at Stennis Space Center. The Marks production facility had been experiencing intermittent problems with under the hood lamp assemblies for some time. The failure rate, at 2 percent, was unacceptable. Every effort was made to identify the problem so that corrective action could be put in place. The problem was investigated and researched by Saturn's engineering department. In addition, Saturn brought in several independent testing laboratories. Other measures included examining the switch component suppliers and auditing them for compliance to the design specifications and for surface contaminants. All attempts to identify the factors responsible for the failures were inconclusive. In an effort to get to the root of the problem, and at the recommendation of the Mississippi Department of Economic Development, Saturn contacted the NASA TAP at Stennis. The NASA Materials and Contamination Laboratory, with assistance from the Stennis Prototype Laboratory, conducted a materials evaluation study on the switch components. The laboratory findings showed the failures were caused by a build-up of carbon-based contaminants on the switch components. Saturn Electronics & Engineering, Inc., is a minority-owned provider of contract manufacturing services to a diverse global marketplace. Saturn operates manufacturing facilities globally serving the North American, European, and Asian markets. Saturn's production facility in Marks, Mississippi, produces more than 1,000,000 lamps and switches monthly. "Since the NASA recommendations were implemented, our internal failure rate for intermittency has dropped to less than .02 percent. Most importantly, we restored our high-level of customer satisfaction. Stennis provided an invaluable service to our business," Patrick said. Both NASA and Saturn were pleased with the results form this technical assistance project. The Technology Assistance Program at Stennis makes available to the public NASA technical expertise and access to lab facilities. This project provided both services with a positive outcome.

Power supply and pulsing strategies for the future linear colliders

NASA Astrophysics Data System (ADS)

Brogna, A. S.; Göttlicher, P.; Weber, M.

2012-02-01

The concept of the power delivery systems of the future linear colliders exploits the pulsed bunch structure of the beam in order to minimize the average current in the cables and the electronics and thus to reduce the material budget and heat dissipation. Although modern integrated circuit technologies are already available to design a low-power system, the concepts on how to pulse the front-end electronics and further reduce the power are not yet well understood. We propose a possible implementation of a power pulsing system based on a DC/DC converter and we choose the Analog Hadron Calorimeter as a specific example. The model features large switching currents of electronic modules in short time intervals to stimulate the inductive components along the cables and interconnections.

Transparent active matrix organic light-emitting diode displays driven by nanowire transistor circuitry.

PubMed

Ju, Sanghyun; Li, Jianfeng; Liu, Jun; Chen, Po-Chiang; Ha, Young-Geun; Ishikawa, Fumiaki; Chang, Hsiaokang; Zhou, Chongwu; Facchetti, Antonio; Janes, David B; Marks, Tobin J

2008-04-01

Optically transparent, mechanically flexible displays are attractive for next-generation visual technologies and portable electronics. In principle, organic light-emitting diodes (OLEDs) satisfy key requirements for this application-transparency, lightweight, flexibility, and low-temperature fabrication. However, to realize transparent, flexible active-matrix OLED (AMOLED) displays requires suitable thin-film transistor (TFT) drive electronics. Nanowire transistors (NWTs) are ideal candidates for this role due to their outstanding electrical characteristics, potential for compact size, fast switching, low-temperature fabrication, and transparency. Here we report the first demonstration of AMOLED displays driven exclusively by NW electronics and show that such displays can be optically transparent. The displays use pixel dimensions suitable for hand-held applications, exhibit 300 cd/m2 brightness, and are fabricated at temperatures suitable for integration on plastic substrates.

Zero-static power radio-frequency switches based on MoS2 atomristors.

PubMed

Kim, Myungsoo; Ge, Ruijing; Wu, Xiaohan; Lan, Xing; Tice, Jesse; Lee, Jack C; Akinwande, Deji

2018-06-28

Recently, non-volatile resistance switching or memristor (equivalently, atomristor in atomic layers) effect was discovered in transitional metal dichalcogenides (TMD) vertical devices. Owing to the monolayer-thin transport and high crystalline quality, ON-state resistances below 10 Ω are achievable, making MoS 2 atomristors suitable as energy-efficient radio-frequency (RF) switches. MoS 2 RF switches afford zero-hold voltage, hence, zero-static power dissipation, overcoming the limitation of transistor and mechanical switches. Furthermore, MoS 2 switches are fully electronic and can be integrated on arbitrary substrates unlike phase-change RF switches. High-frequency results reveal that a key figure of merit, the cutoff frequency (f c ), is about 10 THz for sub-μm 2 switches with favorable scaling that can afford f c above 100 THz for nanoscale devices, exceeding the performance of contemporary switches that suffer from an area-invariant scaling. These results indicate a new electronic application of TMDs as non-volatile switches for communication platforms, including mobile systems, low-power internet-of-things, and THz beam steering.

Design of the front end electronics for the infrared camera of JEM-EUSO, and manufacturing and verification of the prototype model

NASA Astrophysics Data System (ADS)

Maroto, Oscar; Diez-Merino, Laura; Carbonell, Jordi; Tomàs, Albert; Reyes, Marcos; Joven-Alvarez, Enrique; Martín, Yolanda; Morales de los Ríos, J. A.; del Peral, Luis; Rodríguez-Frías, M. D.

2014-07-01

The Japanese Experiment Module (JEM) Extreme Universe Space Observatory (EUSO) will be launched and attached to the Japanese module of the International Space Station (ISS). Its aim is to observe UV photon tracks produced by ultra-high energy cosmic rays developing in the atmosphere and producing extensive air showers. The key element of the instrument is a very wide-field, very fast, large-lense telescope that can detect extreme energy particles with energy above 1019 eV. The Atmospheric Monitoring System (AMS), comprising, among others, the Infrared Camera (IRCAM), which is the Spanish contribution, plays a fundamental role in the understanding of the atmospheric conditions in the Field of View (FoV) of the telescope. It is used to detect the temperature of clouds and to obtain the cloud coverage and cloud top altitude during the observation period of the JEM-EUSO main instrument. SENER is responsible for the preliminary design of the Front End Electronics (FEE) of the Infrared Camera, based on an uncooled microbolometer, and the manufacturing and verification of the prototype model. This paper describes the flight design drivers and key factors to achieve the target features, namely, detector biasing with electrical noise better than 100μV from 1Hz to 10MHz, temperature control of the microbolometer, from 10°C to 40°C with stability better than 10mK over 4.8hours, low noise high bandwidth amplifier adaptation of the microbolometer output to differential input before analog to digital conversion, housekeeping generation, microbolometer control, and image accumulation for noise reduction. It also shows the modifications implemented in the FEE prototype design to perform a trade-off of different technologies, such as the convenience of using linear or switched regulation for the temperature control, the possibility to check the camera performances when both microbolometer and analog electronics are moved further away from the power and digital electronics, and the addition of switching regulators to demonstrate the design is immune to the electrical noise the switching converters introduce. Finally, the results obtained during the verification phase are presented: FEE limitations, verification results, including FEE noise for each channel and its equivalent NETD and microbolometer temperature stability achieved, technologies trade-off, lessons learnt, and design improvement to implement in future project phases.

Smoothing tautologies, hidden dynamics, and sigmoid asymptotics for piecewise smooth systems

NASA Astrophysics Data System (ADS)

Jeffrey, Mike R.

2015-10-01

Switches in real systems take many forms, such as impacts, electronic relays, mitosis, and the implementation of decisions or control strategies. To understand what is lost, and what can be retained, when we model a switch as an instantaneous event, requires a consideration of so-called hidden terms. These are asymptotically vanishing outside the switch, but can be encoded in the form of nonlinear switching terms. A general expression for the switch can be developed in the form of a series of sigmoid functions. We review the key steps in extending Filippov's method of sliding modes to such systems. We show how even slight nonlinear effects can hugely alter the behaviour of an electronic control circuit, and lead to "hidden" attractors inside the switching surface.

Smoothing tautologies, hidden dynamics, and sigmoid asymptotics for piecewise smooth systems.

PubMed

Jeffrey, Mike R

2015-10-01

Switches in real systems take many forms, such as impacts, electronic relays, mitosis, and the implementation of decisions or control strategies. To understand what is lost, and what can be retained, when we model a switch as an instantaneous event, requires a consideration of so-called hidden terms. These are asymptotically vanishing outside the switch, but can be encoded in the form of nonlinear switching terms. A general expression for the switch can be developed in the form of a series of sigmoid functions. We review the key steps in extending Filippov's method of sliding modes to such systems. We show how even slight nonlinear effects can hugely alter the behaviour of an electronic control circuit, and lead to "hidden" attractors inside the switching surface.

Smoothing tautologies, hidden dynamics, and sigmoid asymptotics for piecewise smooth systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jeffrey, Mike R., E-mail: mike.jeffrey@bristol.ac.uk

2015-10-15

Switches in real systems take many forms, such as impacts, electronic relays, mitosis, and the implementation of decisions or control strategies. To understand what is lost, and what can be retained, when we model a switch as an instantaneous event, requires a consideration of so-called hidden terms. These are asymptotically vanishing outside the switch, but can be encoded in the form of nonlinear switching terms. A general expression for the switch can be developed in the form of a series of sigmoid functions. We review the key steps in extending Filippov's method of sliding modes to such systems. We showmore » how even slight nonlinear effects can hugely alter the behaviour of an electronic control circuit, and lead to “hidden” attractors inside the switching surface.« less

Development of Simulated Disturbing Source for Isolation Switch

NASA Astrophysics Data System (ADS)

Cheng, Lin; Liu, Xiang; Deng, Xiaoping; Pan, Zhezhe; Zhou, Hang; Zhu, Yong

2018-01-01

In order to simulate the substation in the actual scene of the harsh electromagnetic environment, and then research on electromagnetic compatibility testing of electronic instrument transformer, On the basis of the original isolation switch as a harassment source of the electronic instrument transformer electromagnetic compatibility test system, an isolated switch simulation source system was developed, to promote the standardization of the original test. In this paper, the circuit breaker is used to control the opening and closing of the gap arc to simulate the operating of isolating switch, and the isolation switch simulation harassment source system is designed accordingly. Comparison with the actual test results of the isolating switch, it is proved that the system can meet the test requirements, and the simulation harassment source system has good stability and high reliability.

Highly flexible and electroforming free resistive switching behavior of tungsten disulfide flakes fabricated through advanced printing technology

NASA Astrophysics Data System (ADS)

Muqeet Rehman, Muhammad; Uddin Siddiqui, Ghayas; Doh, Yang Hoi; Choi, Kyung Hyun

2017-09-01

Tungsten disulfide (WS2) is a transition metal dichalcogenide that differs from other 2D materials such as graphene owing to its distinctive semiconducting nature and tunable band gap. In this study, we have reported the structural, electrical, physical, and mechanical properties of exfoliated WS2 flakes and used them as the functional layer of a rewritable bipolar memory device. We demonstrate this concept by sandwiching few-layered WS2 flakes between two silver (Ag) electrodes on a flexible and transparent PET substrate. The entire device fabrication was carried out through all-printing technology such as reverse offset printing for patterning bottom electrodes, electrohydrodynamic (EHD) atomization for depositing functional thin film and EHD patterning for depositing the top electrode respectively. The memory device was further encapsulated with an atomically thin layer of aluminum oxide (Al2O3), deposited through a spatial atmospheric atomic layer deposition system to protect it against a humid environment. Remarkable resistive switching results were obtained, such as nonvolatile bipolar behavior, a high switching ratio (∼103), a long retention time (∼105 s), high endurance (1500 voltage sweeps), a low operating voltage (∼2 V), low current compliance (50 μA), mechanical robustness (1500 cycles) and unique repeatability at ambient conditions. Ag/WS2/Ag-based memory devices offer a new possibility for integration in flexible electronic devices.

Safety Assessment of TACOM’s Crew Station/Turret Motion Base Simulator

DTIC Science & Technology

1992-04-01

mode. The power ON switch is interlocked with the system hydraulic pressure switch so that the electronics can not be turned off while the system...analog) "o Oil Temperature Transducer (analog) "o Facility Pressure Switch o Pressure Critical Switch "o Six Supply Solenoid Valves "O Three Accumulator...Relief Solenoid Valves o Return Pressure Switch o Return Valve Switch o Six Filter Clogged Switches (one per filter) The Facility Pressure switch detects

Controllable Organic Resistive Switching Achieved by One-Step Integration of Cone-Shaped Contact.

PubMed

Ling, Haifeng; Yi, Mingdong; Nagai, Masaru; Xie, Linghai; Wang, Laiyuan; Hu, Bo; Huang, Wei

2017-09-01

Conductive filaments (CFs)-based resistive random access memory possesses the ability of scaling down to sub-nanoscale with high-density integration architecture, making it the most promising nanoelectronic technology for reclaiming Moore's law. Compared with the extensive study in inorganic switching medium, the scientific challenge now is to understand the growth kinetics of nanoscale CFs in organic polymers, aiming to achieve controllable switching characteristics toward flexible and reliable nonvolatile organic memory. Here, this paper systematically investigates the resistive switching (RS) behaviors based on a widely adopted vertical architecture of Al/organic/indium-tin-oxide (ITO), with poly(9-vinylcarbazole) as the case study. A nanoscale Al filament with a dynamic-gap zone (DGZ) is directly observed using in situ scanning transmission electron microscopy (STEM) , which demonstrates that the RS behaviors are related to the random formation of spliced filaments consisting of Al and oxygen vacancy dual conductive channels growing through carbazole groups. The randomicity of the filament formation can be depressed by introducing a cone-shaped contact via a one-step integration method. The conical electrode can effectively shorten the DGZ and enhance the localized electric field, thus reducing the switching voltage and improving the RS uniformity. This study provides a deeper insight of the multiple filamentary mechanisms for organic RS effect. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Defense switched network technology and experiments program

NASA Astrophysics Data System (ADS)

Weinstein, C. J.

1983-09-01

This report documents work performed during FY 1983 on the DCA-sponsored Defense Switched Network Technology and Experiments Program. The areas of work reported are: (1) development of routing algorithms for application in the Defense Switched Network (DSN); (2) instrumentation and integration of the Experimental Integrated Switched Network (EISN) test facility; (3) development and test of data communication techniques using DoD-standard data protocols in an integrated voice/data network; and (4) EISN system coordination and experiment planning.

A low-latency optical switch architecture using integrated μm SOI-based contention resolution and switching

NASA Astrophysics Data System (ADS)

Mourgias-Alexandris, G.; Moralis-Pegios, M.; Terzenidis, N.; Cherchi, M.; Harjanne, M.; Aalto, T.; Vyrsokinos, K.; Pleros, N.

2018-02-01

The urgent need for high-bandwidth and high-port connectivity in Data Centers has boosted the deployment of optoelectronic packet switches towards bringing high data-rate optics closer to the ASIC, realizing optical transceiver functions directly at the ASIC package for high-rate, low-energy and low-latency interconnects. Even though optics can offer a broad range of low-energy integrated switch fabrics for replacing electronic switches and seamlessly interface with the optical I/Os, the use of energy- and latency-consuming electronic SerDes continues to be a necessity, mainly dictated by the absence of integrated and reliable optical buffering solutions. SerDes undertakes the role of optimally synergizing the lower-speed electronic buffers with the incoming and outgoing optical streams, suggesting that a SerDes-released chip-scale optical switch fabric can be only realized in case all necessary functions including contention resolution and switching can be implemented on a common photonic integration platform. In this paper, we demonstrate experimentally a hybrid Broadcast-and-Select (BS) / wavelength routed optical switch that performs both the optical buffering and switching functions with μm-scale Silicon-integrated building blocks. Optical buffering is carried out in a silicon-integrated variable delay line bank with a record-high on-chip delay/footprint efficiency of 2.6ns/mm2 and up to 17.2 nsec delay capability, while switching is executed via a BS design and a silicon-integrated echelle grating, assisted by SOA-MZI wavelength conversion stages and controlled by a FPGA header processing module. The switch has been experimentally validated in a 3x3 arrangement with 10Gb/s NRZ optical data packets, demonstrating error-free switching operation with a power penalty of <5dB.

EDITORIAL: Molecular switches at surfaces Molecular switches at surfaces

NASA Astrophysics Data System (ADS)

Weinelt, Martin; von Oppen, Felix

2012-10-01

In nature, molecules exploit interaction with their environment to realize complex functionalities on the nanometer length scale. Physical, chemical and/or biological specificity is frequently achieved by the switching of molecules between microscopically different states. Paradigmatic examples are the energy production in proton pumps of bacteria or the signal conversion in human vision, which rely on switching molecules between different configurations or conformations by external stimuli. The remarkable reproducibility and unparalleled fatigue resistance of these natural processes makes it highly desirable to emulate nature and develop artificial systems with molecular functionalities. A promising avenue towards this goal is to anchor the molecular switches at surfaces, offering new pathways to control their functional properties, to apply electrical contacts, or to integrate switches into larger systems. Anchoring at surfaces allows one to access the full range from individual molecular switches to self-assembled monolayers of well-defined geometry and to customize the coupling between molecules and substrate or between adsorbed molecules. Progress in this field requires both synthesis and preparation of appropriate molecular systems and control over suitable external stimuli, such as light, heat, or electrical currents. To optimize switching and generate function, it is essential to unravel the geometric structure, the electronic properties and the dynamic interactions of the molecular switches on surfaces. This special section, Molecular Switches at Surfaces, collects 17 contributions describing different aspects of this research field. They analyze elementary processes, both in single molecules and in ensembles of molecules, which involve molecular switching and concomitant changes of optical, electronic, or magnetic properties. Two topical reviews summarize the current status, including both challenges and achievements in the field of molecular switches on metal surfaces, focusing on electronic and vibrational spectroscopy in one case and scanning tunneling microscopy studies in the other. Original research articles describe results in many aspects of the field, including: Self-assembly, self-organization, and controlled growth of molecular layers on various substrates. Highly-ordered arrays provide model systems with extraordinary structural properties, allowing one to adjust interactions between molecules and between molecule and substrate, and can be robustly prepared from solution, an essential prerequisite for applications. Conformational or electronic switching of molecules adsorbed at metal and semiconductor surfaces. These studies highlight the elementary processes governing molecular switching at surfaces as well as the wide range of possible stimuli. Carbon-based substrates such as graphene or carbon nanotubes. These substrates are attractive due to their effective two-dimensionality which implies that switching of adsorbed molecules can effect a significant back-action on the substrate. Mechanisms of conformational switching. Several contributions study the role of electron-vibron coupling and heating in current-induced conformational switching. We hope that the collection of articles presented here will stimulate and encourage researchers in surface physics and interfacial chemistry to contribute to the still emerging field of molecular switches at surfaces. We wish to acknowledge the support and input from many colleagues in preparing this special section. A significant part of this work has been conducted in the framework of the Sonderforschungsbereich 658 Elementary Processes in Molecular Switches at Surfaces of the Deutsche Forschungsgemeinschaft, to which we are grateful for financial support. Molecular surfaces at switches contents Molecular switches at surfacesMartin Weinelt and Felix von Oppen Optically and thermally induced molecular switching processes at metal surfacesPetra Tegeder Effects of electron-vibration coupling in transport through single moleculesKatharina J Franke and Jose Ignacio Pascual Vibrational heating in single-molecule switches: an energy-dependent density-of-states approachT Brumme, R Gutierrez and G Cuniberti Reversible switching of single tin phthalocyanine molecules on the InAs(111)A surfaceC Nacci, K Kanisawa and S Fölsch Tuning the interaction between carbon nanotubes and dipole switches: the influence of the change of the nanotube-spiropyran distanceP Bluemmel, A Setaro, C Maity, S Hecht and S Reich Carbon nanotubes as substrates for molecular spiropyran-based switchesE Malic, A Setaro, P Bluemmel, Carlos F Sanz-Navarro, Pablo Ordejón, S Reich and A Knorr Ultrafast dynamics of dithienylethenes differently linked to the surface of TiO2 nanoparticlesLars Dworak, Marc Zastrow, Gehad Zeyat, Karola Rück-Braun and Josef Wachtveitl Switching the electronic properties of Co-octaethylporphyrin molecules on oxygen-covered Ni films by NO adsorptionC F Hermanns, M Bernien, A Krüger, J Miguel and W Kuch STM-switching of organic molecules on semiconductor surfaces: an above threshold density matrix model for 1,5 cyclooctadiene on Si(100)K Zenichowski, Ch Nacci, S Fölsch, J Dokić, T Klamroth and P Saalfrank A switch based on self-assembled thymineFatih Kalkan, Michael Mehlhorn and Karina Morgenstern The growth and electronic structure of azobenzene-based functional molecules on layered crystalsJ Iwicki, E Ludwig, J Buck, M Kalläne, F Köhler, R Herges, L Kipp and K Rossnagel Voltage-dependent conductance states of a single-molecule junctionY F Wang, N Néel, J Kröger, H Vázquez, M Brandbyge, B Wang and R Berndt Molecules with multiple switching units on a Au(111) surface: self-organization and single-molecule manipulationJohannes Mielke, Sofia Selvanathan, Maike Peters, Jutta Schwarz, Stefan Hecht and Leonhard Grill Preparing and regulating a bi-stable molecular switch by atomic manipulationS Sakulsermsuk, R E Palmer and P A Sloan Mixed self-assembled monolayers of azobenzene photoswitches with trifluoromethyl and cyano end groupsDaniel Brete, Daniel Przyrembel, Christian Eickhoff, Robert Carley, Wolfgang Freyer, Karsten Reuter, Cornelius Gahl and Martin Weinelt Reversible electron-induced cis-trans isomerization mediated by intermolecular interactionsCh Lotze, Y Luo, M Corso, K J Franke, R Haag and J I Pascual Transport properties of graphene functionalized with molecular switchesNiels Bode, Eros Mariani and Felix von Oppen

A Lossless Network for Data Acquisition

NASA Astrophysics Data System (ADS)

Jereczek, Grzegorz; Lehmann Miotto, Giovanna; Malone, David; Walukiewicz, Miroslaw

2017-06-01

The bursty many-to-one communication pattern, typical for data acquisition systems, is particularly demanding for commodity TCP/IP and Ethernet technologies. We expand the study of lossless switching in software running on commercial off-the-shelf servers, using the ATLAS experiment as a case study. In this paper, we extend the popular software switch, Open vSwitch, with a dedicated, throughput-oriented buffering mechanism for data acquisition. We compare the performance under heavy congestion on typical Ethernet switches to a commodity server acting as a switch. Our results indicate that software switches with large buffers perform significantly better. Next, we evaluate the scalability of the system when building a larger topology of interconnected software switches, exploiting the integration with software-defined networking technologies. We build an IP-only leaf-spine network consisting of eight software switches running on distinct physical servers as a demonstrator.

Membrane Switches Check Seal Pressure

NASA Technical Reports Server (NTRS)

Hodgetts, P. J.; Stuckenberg, F. H.; Morrissey, E. T.

1984-01-01

Array of flexible membrane switches used to indicate closure of seal. Switch membrane responds to pressure exerted by rigid surface on compliant sealing medium and provides switch contacts monitored electronically. Membrane switches connected in series and placed under seal. When all switches are closed lamp or LED lights up, indicating requisite seal pressure has been realized at all switch positions. Principle used to ensure integrity of seals on refrigerator and oven doors, weatherstripping, hatches, spacecraft, airplanes, and submarines.

Electrofluidic systems for contrast management

NASA Astrophysics Data System (ADS)

Rebello, Keith J.; Maranchi, Jeffrey P.; Tiffany, Jason E.; Brown, Christopher Y.; Maisano, Adam J.; Hagedon, Matthew A.; Heikenfeld, Jason C.

2012-06-01

Operating in dynamic lighting conditions and in greatly varying backgrounds is challenging. Current paints and state-ofthe- art passive adaptive coatings (e.g. photochromics) are not suitable for multi- environment situations. A semi-active, low power, skin is needed that can adapt its reflective properties based on the background environment to minimize contrast through the development and incorporation of suitable pigment materials. Electrofluidic skins are a reflective display technology for electronic ink and paper applications. The technology is similar to that in E Ink but makes use of MEMS based microfluidic structures, instead of simple black and white ink microcapsules dispersed in clear oil. Electrofluidic skin's low power operation and fast switching speeds (~20 ms) are an improvement over current state-ofthe- art contrast management technologies. We report on a microfluidic display which utilizes diffuse pigment dispersion inks to change the contrast of the underlying substrate from 5.8% to 100%. Voltage is applied and an electromechanical pressure is used to pull a pigment dispersion based ink from a hydrophobic coated reservoir into a hydrophobic coated surface channel. When no voltage is applied, the Young-Laplace pressure pushes the pigment dispersion ink back down into the reservoir. This allows the pixel to switch from the on and off state by balancing the two pressures. Taking a systems engineering approach from the beginning of development has enabled the technology to be integrated into larger systems.

Optical Circuit Switched Protocol

NASA Technical Reports Server (NTRS)

Monacos, Steve P. (Inventor)

2000-01-01

The present invention is a system and method embodied in an optical circuit switched protocol for the transmission of data through a network. The optical circuit switched protocol is an all-optical circuit switched network and includes novel optical switching nodes for transmitting optical data packets within a network. Each optical switching node comprises a detector for receiving the header, header detection logic for translating the header into routing information and eliminating the header, and a controller for receiving the routing information and configuring an all optical path within the node. The all optical path located within the node is solely an optical path without having electronic storage of the data and without having optical delay of the data. Since electronic storage of the header is not necessary and the initial header is eliminated by the first detector of the first switching node. multiple identical headers are sent throughout the network so that subsequent switching nodes can receive and read the header for setting up an optical data path.

Grain-size considerations for optoelectronic multistage interconnection networks.

PubMed

Krishnamoorthy, A V; Marchand, P J; Kiamilev, F E; Esener, S C

1992-09-10

This paper investigates, at the system level, the performance-cost trade-off between optical and electronic interconnects in an optoelectronic interconnection network. The specific system considered is a packet-switched, free-space optoelectronic shuffle-exchange multistage interconnection network (MIN). System bandwidth is used as the performance measure, while system area, system power, and system volume constitute the cost measures. A detailed design and analysis of a two-dimensional (2-D) optoelectronic shuffle-exchange routing network with variable grain size K is presented. The architecture permits the conventional 2 x 2 switches or grains to be generalized to larger K x K grain sizes by replacing optical interconnects with electronic wires without affecting the functionality of the system. Thus the system consists of log(k) N optoelectronic stages interconnected with free-space K-shuffles. When K = N, the MIN consists of a single electronic stage with optical input-output. The system design use an effi ient 2-D VLSI layout and a single diffractive optical element between stages to provide the 2-D K-shuffle interconnection. Results indicate that there is an optimum range of grain sizes that provides the best performance per cost. For the specific VLSI/GaAs multiple quantum well technology and system architecture considered, grain sizes larger than 256 x 256 result in a reduced performance, while grain sizes smaller than 16 x 16 have a high cost. For a network with 4096 channels, the useful range of grain sizes corresponds to approximately 250-400 electronic transistors per optical input-output channel. The effect of varying certain technology parameters such as the number of hologram phase levels, the modulator driving voltage, the minimum detectable power, and VLSI minimum feature size on the optimum grain-size system is studied. For instance, results show that using four phase levels for the interconnection hologram is a good compromise for the cost functions mentioned above. As VLSI minimum feature sizes decrease, the optimum grain size increases, whereas, if optical interconnect performance in terms of the detector power or modulator driving voltage requirements improves, the optimum grain size may be reduced. Finally, several architectural modifications to the system, such as K x K contention-free switches and sorting networks, are investigated and optimized for grain size. Results indicate that system bandwidth can be increased, but at the price of reduced performance/cost. The optoelectronic MIN architectures considered thus provide a broad range of performance/cost alternatives and offer a superior performance over purely electronic MIN's.

MILCOM '85 - Military Communications Conference, Boston, MA, October 20-23, 1985, Conference Record. Volumes 1, 2, & 3

NASA Astrophysics Data System (ADS)

The present conference on the development status of communications systems in the context of electronic warfare gives attention to topics in spread spectrum code acquisition, digital speech technology, fiber-optics communications, free space optical communications, the networking of HF systems, and applications and evaluation methods for digital speech. Also treated are issues in local area network system design, coding techniques and applications, technology applications for HF systems, receiver technologies, software development status, channel simultion/prediction methods, C3 networking spread spectrum networks, the improvement of communication efficiency and reliability through technical control methods, mobile radio systems, and adaptive antenna arrays. Finally, communications system cost analyses, spread spectrum performance, voice and image coding, switched networks, and microwave GaAs ICs, are considered.

Design and analysis of a novel doubly salient permanent- magnet generator

NASA Astrophysics Data System (ADS)

Sarlioglu, Bulent

Improvements in permanent magnets and power electronics technologies have made it possible to devise different configurations of electrical machines which were not previously possible to implement. In this dissertation, a novel Doubly Salient Permanent Magnet (DSPM) generator has been designed, analyzed, and tested. The DSPM generator has four stator poles and six rotor poles. Two high density permanent magnets are located in the stator yoke. Since there are no windings or permanent magnets in the rotor, the DSPM generator has several advantages: the rotor has low inertia, no copper loss, no PM attachments, no brushes, and no slip rings. This type of rotor can be manufactured easily, and can be run at very high speeds as in the case of a switched reluctance machine. Compared to induction and switched reluctance machines, the DSPM generator can produce more power from the same geometry. Moreover, the efficiency of the DSPM generator is higher, since there is no copper loss associated with excitation of the machine. Another advantage of the DSPM generator is that the output AC voltage can easily be rectified by a diode bridge rectifier, while in the case of the switched reluctance machine one needs to use active semiconductor switches for power generation. If greater utilization and control of power production capability are desired, the AC output of the DSPM generator can be rectified using an active converter. In this dissertation, a novel doubly salient permanent magnet generator is introduced. First, the theory of the DSPM generator is given. Later, this novel generator is investigated using conventional magnetic circuits, nonlinear finite element analysis, and simulations with first order approximations and nonlinear modeling. It is compared with other generators. Static and no-load testing of the prototype DSPM generator are presented, and generator performance is evaluated with various power electronic circuits.

All-optical SR flip-flop based on SOA-MZI switches monolithically integrated on a generic InP platform

NASA Astrophysics Data System (ADS)

Pitris, St.; Vagionas, Ch.; Kanellos, G. T.; Kisacik, R.; Tekin, T.; Broeke, R.; Pleros, N.

2016-03-01

At the dawning of the exaflop era, High Performance Computers are foreseen to exploit integrated all-optical elements, to overcome the speed limitations imposed by electronic counterparts. Drawing from the well-known Memory Wall limitation, imposing a performance gap between processor and memory speeds, research has focused on developing ultra-fast latching devices and all-optical memory elements capable of delivering buffering and switching functionalities at unprecedented bit-rates. Following the master-slave configuration of electronic Flip-Flops, coupled SOA-MZI based switches have been theoretically investigated to exceed 40 Gb/s operation, provided a short coupling waveguide. However, this flip-flop architecture has been only hybridly integrated with silica-on-silicon integration technology exhibiting a total footprint of 45x12 mm2 and intra-Flip-Flop coupling waveguide of 2.5cm, limited at 5 Gb/s operation. Monolithic integration offers the possibility to fabricate multiple active and passive photonic components on a single chip at a close proximity towards, bearing promises for fast all-optical memories. Here, we present for the first time a monolithically integrated all-optical SR Flip-Flop with coupled master-slave SOA-MZI switches. The photonic chip is integrated on a 6x2 mm2 die as a part of a multi-project wafer run using library based components of a generic InP platform, fiber-pigtailed and fully packaged on a temperature controlled ceramic submount module with electrical contacts. The intra Flip-Flop coupling waveguide is 5 mm long, reducing the total footprint by two orders of magnitude. Successful flip flop functionality is evaluated at 10 Gb/s with clear open eye diagram, achieving error free operation with a power penalty of 4dB.

X-ray generation using carbon nanotubes

NASA Astrophysics Data System (ADS)

Parmee, Richard J.; Collins, Clare M.; Milne, William I.; Cole, Matthew T.

2015-01-01

Since the discovery of X-rays over a century ago the techniques applied to the engineering of X-ray sources have remained relatively unchanged. From the inception of thermionic electron sources, which, due to simplicity of fabrication, remain central to almost all X-ray applications, there have been few fundamental technological advances. However, with the emergence of ever more demanding medical and inspection techniques, including computed tomography and tomosynthesis, security inspection, high throughput manufacturing and radiotherapy, has resulted in a considerable level of interest in the development of new fabrication methods. The use of conventional thermionic sources is limited by their slow temporal response and large physical size. In response, field electron emission has emerged as a promising alternative means of deriving a highly controllable electron beam of a well-defined distribution. When coupled to the burgeoning field of nanomaterials, and in particular, carbon nanotubes, such systems present a unique technological opportunity. This review provides a summary of the current state-of-the-art in carbon nanotube-based field emission X-ray sources. We detail the various fabrication techniques and functional advantages associated with their use, including the ability to produce ever smaller electron beam assembles, shaped cathodes, enhanced temporal stability and emergent fast-switching pulsed sources. We conclude with an overview of some of the commercial progress made towards the realisation of an innovative and disruptive technology.

Learning and mastery behaviours as risk factors to abandonment in a paediatric user of advanced single-switch access technology.

PubMed

Brian, Leung; Jessica A, Brian; Tom, Chau

2013-09-01

The present descriptive case study documents the behaviours of a child single-switch user in the community setting and draws attention to learning and mastery behaviours as risk factors to single-switch abandonment. Our observations were interpreted in the context of a longer term school-based evaluation of an advanced single-switch access technology with a nine year-old user with severe spastic quadriplegic cerebral palsy. The child completed 25 experiment sessions averaging a rate of three sessions every two weeks. During each session he worked on several blocks of single-switch computer activity using his vocal cord vibration switch. Despite high levels of single-switch sensitivity and specificity that suggested a good fit between the participant and the technology, the participant perceived a lower proficiency level of his own abilities, demonstrated impatience and intolerance to interaction errors, and was apprehensive of making mistakes when using his switch in public. The benefit of gaining some degree of independent physical access might not necessarily enhance resilience to interaction errors or bouts of poor task performance. On the other hand, the participant's behaviours were consistent with those of a typically developing child learning or mastering any new skill or task. Implications for Rehabilitation The attitude and behaviour of a paediatric switch user towards skill development can be risk factors to abandonment of an access technology, despite successful clinical trial with the device. Children with severe disabilities can be associated with the same types of skill development behaviour patterns and achievement motivation as their typically developing peers. Empirical observations of the case participant's switch use behaviours suggest that user training could be adaptive in order to account for individual differences in skill development and achievement motivation.

Wide Bandgap Extrinsic Photoconductive Switches

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sullivan, James S.

2013-07-03

Semi-insulating Gallium Nitride, 4H and 6H Silicon Carbide are attractive materials for compact, high voltage, extrinsic, photoconductive switches due to their wide bandgap, high dark resistance, high critical electric field strength and high electron saturation velocity. These wide bandgap semiconductors are made semi-insulating by the addition of vanadium (4H and 6HSiC) and iron (2H-GaN) impurities that form deep acceptors. These deep acceptors trap electrons donated from shallow donor impurities. The electrons can be optically excited from these deep acceptor levels into the conduction band to transition the wide bandgap semiconductor materials from a semi-insulating to a conducting state. Extrinsic photoconductivemore » switches with opposing electrodes have been constructed using vanadium compensated 6H-SiC and iron compensated 2H-GaN. These extrinsic photoconductive switches were tested at high voltage and high power to determine if they could be successfully used as the closing switch in compact medical accelerators.« less

Phase transition transistors based on strongly-correlated materials

NASA Astrophysics Data System (ADS)

Nakano, Masaki

2013-03-01

The field-effect transistor (FET) provides electrical switching functions through linear control of the number of charges at a channel surface by external voltage. Controlling electronic phases of condensed matters in a FET geometry has long been a central issue of physical science. In particular, FET based on a strongly correlated material, namely ``Mott transistor,'' has attracted considerable interest, because it potentially provides gigantic and diverse electronic responses due to a strong interplay between charge, spin, orbital and lattice. We have investigated electric-field effects on such materials aiming at novel physical phenomena and electronic functions originating from strong correlation effects. Here we demonstrate electrical switching of bulk state of matter over the first-order metal-insulator transition. We fabricated FETs based on VO2 with use of a recently developed electric-double-layer transistor technique, and found that the electrostatically induced carriers at a channel surface drive all preexisting localized carriers of 1022 cm-3 even inside a bulk to motion, leading to bulk carrier delocalization beyond the electrostatic screening length. This non-local switching of bulk phases is achieved with just around 1 V, and moreover, a novel non-volatile memory like character emerges in a voltage-sweep measurement. These observations are apparently distinct from those of conventional FETs based on band insulators, capturing the essential feature of collective interactions in strongly correlated materials. This work was done in collaboration with K. Shibuya, D. Okuyama, T. Hatano, S. Ono, M. Kawasaki, Y. Iwasa, and Y. Tokura. This work was supported by the Japan Society for the Promotion of Science (JSAP) through its ``Funding Program for World-Leading Innovative R&D on Science and Technology (FIRST Program).''

Solid state switch panel. [determination of optimum transducer type for required switches

NASA Technical Reports Server (NTRS)

Beenfeldt, E.

1973-01-01

An intensive study of various forms of transducers was conducted with application towards hermetically sealing the transducer and all electronics. The results of the study indicated that the Hall effect devices and a LED/phototransistor combination were the most practical for this type of application. Therefore, hardware was developed utilizing a magnet/Hall effect transducer for single action switches and LED/phototransistor transducers for rotary multiposition or potentiometer applications. All electronics could be housed in a hermetically sealed compartment. A number of switches were built and models were hermetically sealed to prove the feasibility of this type of fabrication. One of each type of switch was subjected to temperature cycling, vibration, and EMI tests. The results of these tests are presented.

Materials growth and characterization of thermoelectric and resistive switching devices

NASA Astrophysics Data System (ADS)

Norris, Kate J.

In the 74 years since diode rectifier based radar technology helped the allied forces win WWII, semiconductors have transformed the world we live in. From our smart phones to semiconductor-based energy conversion, semiconductors touch every aspect of our lives. With this thesis I hope to expand human knowledge of semiconductor thermoelectric devices and resistive switching devices through experimentation with materials growth and subsequent materials characterization. Metal organic chemical vapor deposition (MOCVD) was the primary method of materials growth utilized in these studies. Additionally, plasma enhanced chemical vapor deposition (PECVD), atomic layer deposition (ALD),ion beam sputter deposition, reactive sputter deposition and electron-beam (e-beam) evaporation were also used in this research for device fabrication. Scanning electron microscopy (SEM), Transmission electron microscopy (TEM), and Electron energy loss spectroscopy (EELS) were the primary characterization methods utilized for this research. Additional device and materials characterization techniques employed include: current-voltage measurements, thermoelectric measurements, x-ray diffraction (XRD), reflection absorption infra-red spectroscopy (RAIRS), atomic force microscopy (AFM), photoluminescence (PL), and raman spectroscopy. As society has become more aware of its impact on the planet and its limited resources, there has been a push toward developing technologies to sustainably produce the energy we need. Thermoelectric devices convert heat directly into electricity. Thermoelectric devices have the potential to save huge amounts of energy that we currently waste as heat, if we can make them cost-effective. Semiconducting thin films and nanowires appear to be promising avenues of research to attain this goal. Specifically, in this work we will explore the use of ErSb thin films as well as Si and InP nanowire networks for thermoelectric applications. First we will discuss the growth of erbium monoantimonide (ErSb) thin films with thermal conductivities close to or slightly smaller than the alloy limit of the two ternary alloy hosts. Second we consider an ex-situ monitoring technique based on glancing-angle infrared-absorption used to determine small amounts of erbium antimonide (ErSb) deposited on an indium antimonide (InSb) layer, a concept for thermoelectric devices to scatter phonons. Thirdly we begin our discussion of nanowires with the selective area growth (SAG) of single crystalline indium phosphide (InP) nanopillars on an array of template segments composed of a stack of gold and amorphous silicon. Our approach enables flexible and scalable nanofabrication using industrially proven tools and a wide range of semiconductors on various non-semiconductor substrates. Then we examine the use of graphene to promote the growth of nanowire networks on flexible copper foil leading to the testing of nanowire network devices for thermoelectric applications and the concept of multi-stage devices. We present the ability to tailor current-voltage characteristics to fit a desired application of thermoelectric devices by using nanowire networks as building blocks that can be stacked vertically or laterally. Furthermore, in the study of our flexible nanowire network multi-stage devices, we discovered the presence of nonlinear current-voltage characteristics and discuss how this feature could be utilized to increase efficiency for thermoelectric devices. This work indicates that with sufficient volume and optimized doping, flexible nanowire networks could be a low cost semiconductor solution to our wasted heat challenge. Resistive switching devices are two terminal electrical resistance switches that retain a state of internal resistance based on the history of applied voltage and current. The occurrence of reversible resistance switching has been widely studied in a variety of material systems for applications including nonvolatile memory, logic circuits, and neuromorphic computing. To this end we next we studied devices in each resistance state of a TaOx switch, which has previously shown high endurance and desirable switching behavior, to better understand the system in nanoscale devices. Finally, we will discuss a self-aligned NbO2 nano-cap demonstrated atop a TaO2.2 switching layer. The goal of this device is to create a nanoscale RRAM and selector device in a single stack. These results indicate that ternary resistive switching devices may be a beneficial method of combining behaviors of different material systems and that with proper engineering a self-aligned selector is possible.

Magnetization and Magnetoresistance in Iron Intercalated Transition Metal Dichalcogenides

NASA Astrophysics Data System (ADS)

Choe, Jesse

The understanding of magnetism in strongly correlated electronic systems is a vital area of research. Not only is it linked to other phenomena like high temperature superconductivity in the cuprates and iron pnictides, but magnetic materials have been used in electronics since before the computer. As it becomes harder to prop up Moore's law by increasing the density of transistors, mankind must look towards new methods to improve technology or risk stagnation. Research into alternative materials for technology, such as transition metal dichalcogenides, is a promising direction of research to maintain the rate of technological improvement. Our work focuses on the effect of iron intercalation in TiS2. Single crystals of FexTiS 2 (0 ≤ x ≤ 1) were grown using vapor transport. Anisotropic susceptibility and magnetization measurements of the samples were measured, showing ferromagnetism and sharp switching behavior in the magnetization. Finally electrical transport measurements were taken, both with and without field. Measurements of magnetoresistance for x = 0.2 and 0.3 show large magnetoresistance (up to ˜ 60%) and an atypical 'bowtie' shape.

Evaluation of switchable organic devices for nonvolatile memory applications

NASA Astrophysics Data System (ADS)

Campbell Scott, J.

2007-03-01

Many organic electronic devices exhibit switching behavior and have therefore been proposed as the basis for a nonvolatile memory technology. In particular, bistable resistive elements, in which a high or low current state is selected by application of a specific voltage, may be used as the elements of a crosspoint memory array. This architecture places very stringent requirements on the electrical response of the individual devices, in terms of on-state current density, switching and retention times, cycling endurance, rectification and size-scaling. In this talk, I will describe the progress that we and others have made towards satisfying these requirements. In many cases, the mechanisms responsible for conduction and switching are not fully understood. In some devices, it has been shown that current flows in a few highly localized regions. These so-called ``filaments'' are not necessarily metallic bridges between the electrodes, but may be associated with chains of nanoparticles introduced into the organic matrix either deliberately or accidentally. Coulomb blockade effects can then explain the switching behavior observed in some devices. This work was done in collaboration with L. D. Bozano, M. Beinhoff, K. R. Carter, V. R. Deline, B. W. Kean, G. M. McClelland, D. C. Miller, P. M. Rice, J. R. Salem, and S. A. Swanson.

Liquid Nitrogen as Fast High Voltage Switching Medium

NASA Astrophysics Data System (ADS)

Dickens, J.; Neuber, A.; Haustein, M.; Krile, J.; Krompholz, H.

2002-12-01

Compact pulsed power systems require new switching technologies. For high voltages, liquid nitrogen seems to be a suitable switching medium, with high hold-off voltage, low dielectric constant, and no need for pressurized systems as in high pressure gas switches. The discharge behavior in liquid nitrogen, such as breakdown voltages, formative times, current rise as function of voltage, recovery, etc. are virtually unknown, however. The phenomenology of breakdown in liquid nitrogen is investigated with high speed (temporal resolution < 1 ns) electrical and optical diagnostics, in a coaxial system with 50-Ohm impedance. Discharge current and voltage are determined with transmission line type current sensors and capacitive voltage dividers. The discharge luminosity is measured with photomultiplier tubes. Preliminary results of self-breakdown investigations (gap 1 mm, breakdown voltage 44 kV, non-boiling supercooled nitrogen) show a fast (2 ns) transition from an unknown current level to several mA, a long-duration (100 ns) phase with constant current superimposed by ns-spikes, and a final fast transition to the impedance limited current during several nanoseconds. The optical measurements will be expanded toward spectroscopy and high speed photography with the aim of clarifying the overall breakdown mechanisms, including electronic initiation, bubble formation, bubble dynamics, and their role in breakdown, for different electrode geometries (different macroscopic field enhancements).

A chameleon catalyst for nonheme iron-promoted olefin oxidation.

PubMed

Iyer, Shyam R; Javadi, Maedeh Moshref; Feng, Yan; Hyun, Min Young; Oloo, Williamson N; Kim, Cheal; Que, Lawrence

2014-11-18

We report the chameleonic reactivity of two nonheme iron catalysts for olefin oxidation with H2O2 that switch from nearly exclusive cis-dihydroxylation of electron-poor olefins to the exclusive epoxidation of electron-rich olefins upon addition of acetic acid. This switching suggests a common precursor to the nucleophilic oxidant proposed to Fe(III)-η(2)-OOH and electrophilic oxidant proposed to Fe(V)(O)(OAc), and reversible coordination of acetic acid as a switching pathway.

Optical MEMS platform for low-cost on-chip integration of planar light circuits and optical switching

NASA Astrophysics Data System (ADS)

German, Kristine A.; Kubby, Joel; Chen, Jingkuang; Diehl, James; Feinberg, Kathleen; Gulvin, Peter; Herko, Larry; Jia, Nancy; Lin, Pinyen; Liu, Xueyuan; Ma, Jun; Meyers, John; Nystrom, Peter; Wang, Yao Rong

2004-07-01

Xerox Corporation has developed a technology platform for on-chip integration of latching MEMS optical waveguide switches and Planar Light Circuit (PLC) components using a Silicon On Insulator (SOI) based process. To illustrate the current state of this new technology platform, working prototypes of a Reconfigurable Optical Add/Drop Multiplexer (ROADM) and a l-router will be presented along with details of the integrated latching MEMS optical switches. On-chip integration of optical switches and PLCs can greatly reduce the size, manufacturing cost and operating cost of multi-component optical equipment. It is anticipated that low-cost, low-overhead optical network products will accelerate the migration of functions and services from high-cost long-haul markets to price sensitive markets, including networks for metropolitan areas and fiber to the home. Compared to the more common silica-on-silicon PLC technology, the high index of refraction of silicon waveguides created in the SOI device layer enables miniaturization of optical components, thereby increasing yield and decreasing cost projections. The latching SOI MEMS switches feature moving waveguides, and are advantaged across multiple attributes relative to alternative switching technologies, such as thermal optical switches and polymer switches. The SOI process employed was jointly developed under the auspice of the NIST APT program in partnership with Coventor, Corning IntelliSense Corp., and MicroScan Systems to enable fabrication of a broad range of free space and guided wave MicroOptoElectroMechanical Systems (MOEMS).

HD-DVD: the next consumer electronics revolution?

NASA Astrophysics Data System (ADS)

Topiwala, Pankaj N.

2003-11-01

The DVD is emerging as one of the world's favorite consumer electronics product, rapidly replacing analog videotape in the US and many other markets at prodigious rates. It is capable of offering a full feature-length, standard-definition movie in crisp rendition on TV. TV technology is itself in the midst of switching from analog to digital TV, with high-definition being the main draw. In fact, the US government has been advocating that switch over to digital TC, with both carrot and stick approaches, for nearly two decades, with only modest results--about 2% penetration. Under FCC herding, broadcasters are falling in the digital line--slowly, and sans profit. Meanwhile, delivery of HD content on portable media would be a great solution. Indeed, a new disk technology based on blue lasers is coming; but its widespread adoption may yet be four to five yeras away. But a promising new video codec--H.264/MPEG-4 AVC, the latest coding standard jointly developed by the Video Coding Experts Group (VCEG) of ITU-T and Moving Picture Experts Group (MPEG) of ISO/IEC, just might be the missing link. It offers substantial coding gains over MPEG-2, used in today's DVDs. With H.264, it appears possible to put HD movies on today's red-laser DVDs. Since consumers love DVDs, and HD--when they can see it, can H.264 and HD-DVD ignite a new revolution, now? It may have a huge impact on (H)DTV adoption rates.

Cryogenic switched MOSFET characterization

NASA Technical Reports Server (NTRS)

1981-01-01

Both p channel and n channel enhancement mode MOSFETs can be readily switched on and off at temperatures as low as 2.8 K so that switch sampled readout of a VLWIR Ge:Ga focal plane is electronically possible. Noise levels as low as 100 rms electrons per sample (independent of sample rate) can be achieved using existing p channel MOSFETs, at overall rates up to 30,000 samples/second per multiplexed channel (e.g., 32 detectors at a rate of almost 1,000 frames/second). Run of the mill devices, including very low power dissipation n channel FETs would still permit noise levels of the order of 500 electrons/sample.

The Space Technology 5 Power System Design

NASA Technical Reports Server (NTRS)

Stewart, Karen D.; Hernandez-Pellerano, Amri I.

2005-01-01

The Space Technology 5 (ST5) mission is a NASA New Millennium Program (NMP) project that was developed to validate new technologies for future missions and to demonstrate the feasibility of building and launching multiple, miniature spacecraft that can operate as science probes, collecting research quality measurements. The three satellites in the ST5 constellation will be launched into a sun synchronous LEO (Low Earth Orbit) in early 2006. ST5 fits in the 25 kilogram and 24 Watt class of miniature but fully capable spacecraft. The power system design features the use of new technology components and a low voltage power bus. In order to hold the mass and volume low and to qualify new technologies for future use in space, high efficiency triple junction solar cells and a lithium ion battery were baselined into the design. The Power System Electronics (PSE) was designed for a high radiation environment and uses hybrid microcircuits for power switching and over current protection. The ST5 power system architecture and technologies will be presented.

Radiation and temperature effects on electronic components investigated under the CSTI high capacity power project

NASA Technical Reports Server (NTRS)

Schwarze, Gene E.; Niedra, Janis M.; Frasca, Albert J.; Wieserman, William R.

1993-01-01

The effects of nuclear radiation and high temperature environments must be fully known and understood for the electronic components and materials used in both the Power Conditioning and Control subsystem and the reactor Instrumentation and Control subsystem of future high capacity nuclear space power systems. This knowledge is required by the designer of these subsystems in order to develop highly reliable, long-life power systems for future NASA missions. A review and summary of the experimental results obtained for the electronic components and materials investigated under the power management element of the Civilian Space Technology Initiative (CSTI) high capacity power project are presented: (1) neutron, gamma ray, and temperature effects on power semiconductor switches, (2) temperature and frequency effects on soft magnetic materials; and (3) temperature effects on rare earth permanent magnets.

Preliminary study, analysis and design for a power switch for digital engine actuators

NASA Technical Reports Server (NTRS)

Beattie, E. C.; Zickwolf, H. C., Jr.

1979-01-01

Innovative control configurations using high temperature switches to operate actuator driving solenoids were studied. The impact on engine control system life cycle costs and reliability of electronic control and (ECU) heat dissipation due to power conditioning and interface drivers were addressed. Various power supply and actuation schemes were investigated, including optical signal transmission and electronics on the actuator, engine driven alternator, and inside the ECU. The use of a switching shunt power conditioner results in the most significant decrease in heat dissipation within the ECU. No overall control system reliability improvement is projected by the use of remote high temperature switches for solenoid drivers.

MEMS for optical switching: technologies, applications, and perspectives

NASA Astrophysics Data System (ADS)

Lin, Lih-Y.; Goldstein, Evan L.

1999-09-01

Micro-electro-mechanical-systems (MEMS), due to their unique ability to integrate electrical, mechanical, and optical elements on a single chip, have recently begun to exhibit great potential for realizing optical components and subsystems in compact, lowcost form. Recently, this technology has been applied to wavelength-division-multiplexed (WDM) networks, and resulted in advances in several network elements, including switches, filters, modulators, and wavelength-add/drop multiplexers. Due largely to the exploding capacity demand arising from data traffic, the transmission capacity demanded of and available from WDM networks is anticipated to increase rapidly. For managing such networks, optical switching is of particular interest due to the fact that its complexity is essentially immune to steady advances in the per-channel bit-rate. We will review various micromachined optical-switching technologies, emphasizing studies of their reliability. We then summarizing recent progress in the free-space MEMS optical switch we have demonstrated.

MEMS for optical switching: technologies, applications, and perspectives

NASA Astrophysics Data System (ADS)

Lin, Lih-Yuan; Goldstein, Evan L.

1999-09-01

Micro-electro-mechanical-systems (MEMS), due to their unique ability to integrate electrical, mechanical, and optical elements on a single chip, have recently begun to exhibit great potential for realizing optical components and subsystems in compact, low-cost form. Recently, this technology has been applied to wavelength-division-multiplexed (WDM) networks, and resulted in advances in several network elements, including switches, filters, modulators, and wavelength-add/drop multiplexers. Due largely to the exploding capacity demand arising from data traffic, the transmission capacity demanded of and available from WDM networks is anticipated to increase rapidly. For managing such networks, optical switching is of particular interest due to the fact that its complexity is essentially immune to steady advances in the per-channel bit-rate. We will review various micromachined optical-switching technologies, emphasizing studies of their reliability. We then summarizing recent progress in the free-space MEMS optical switch we have demonstrated.

Low loss millimeter-wave switches based on the Vanadium Dioxide Metal - Insulator - Transition

NASA Astrophysics Data System (ADS)

Field, Mark; Hillman, Christopher; Stupar, Philip; Griffith, Zachary; Rodwell, Mark

2014-03-01

A new ultra-low-loss and broad band millimeter wave switch technology based on the reversible metal / insulator phase transition of vanadium dioxide has been developed. We report having fabricated series configured, single-pole single-throw (SPST) switches having measured S-parameters from DC to 110 GHz. The on-state insertion loss is 0.2 dB and off-state isolation is 21 dB at 50 GHz. The resulting impedance contrast ratio, ZOFF / ZON, is greater than 500:1 at 50 GHz (i.e. cut-off frequency fc ~ 40 THz). As a demonstration of the technology's utility, we also present the results of a 2-bit real time delay phase shifter incorporating a pair of VO2 SP4T switches. This switch technology's high impedance contrast ratio combined with its compactness, ease of integration, and low voltage operation make it an enabler of previously unachievable high-performance millimeter wave FPGAs.

Ultrafast Manipulation of Magnetic Order with Electrical Pulses

NASA Astrophysics Data System (ADS)

Yang, Yang

During the last 30 years spintronics has been a very rapidly expanding field leading to lots of new interesting physics and applications. As with most technology-oriented fields, spintronics strives to control devices with very low energy consumption and high speed. The combination of spin and electronics inherent to spintronics directly tackles energy efficiency, due to the non-volatility of magnetism. However, speed of operation of spintronic devices is still rather limited ( nanoseconds), due to slow magnetization precessional frequencies. Ultrafast magnetism (or opto-magnetism) is a relatively new field that has been very active in the last 20 years. The main idea is that intense femtosecond laser pulses can be used in order to manipulate the magnetization at very fast time-scales ( 100 femtoseconds). However, the use of femtosecond lasers poses great application challenges such as diffraction limited optical spot sizes which hinders device density, and bulky and expensive integration of femtosecond lasers into devices. In this thesis, our efforts to combine ultrafast magnetism and spintronics are presented. First, we show that the magnetization of ferrimagnetic GdFeCo films can be switched by picosecond electronic heat current pulses. This result shows that a non-thermal distribution of electrons directly excited by laser is not necessary for inducing ultrafast magnetic dynamics. Then, we fabricate photoconductive switch devices on a LT-GaAs substrate, to generate picosecond electrical pulses. Intense electrical pulses with 10ps (FWHM) duration and peak current up to 3A can be generated and delivered into magnetic films. Distinct magnetic dynamics in CoPt films are found between direct optical heating and electrical heating. More importantly, by delivering picosecond electrical pulses into GdFeCo films, we are able to deterministically reverse the magnetization of GdFeCo within 10ps. This is more than one order of magnitude faster than any other electrically controlled magnetic switching. Our results present a fundamentally new switching mechanism electrically, without requirement for any spin polarized current or spin transfer/orbit torques. Our discovery that ultrafast magnetization switching can be achieved with electrical pulses will launch a new frontier of spintronics science and herald a new generation of spintronic devices that operate at high speed with low energy consumption. At last, to push ultrafast spintronics to practical use, ultrafast switching of a ferromagnetic film is desired. By exploiting the exchange interaction between GdFeCo and ferromagnetic Co/Pt layer, we achieved ultrafast (sub 10ps) switching of ferromagnetic film with a single laser pulse. This result will open up the possibility to control ferromagnetic materials at ultrafast time scale, critical for practical applications.

Low-power nanophotonics: material and device technology

NASA Astrophysics Data System (ADS)

Thylén, Lars; Holmstrom, Petter; Wosinski, Lech; Lourdudoss, Sebastian

2013-05-01

Development in photonics for communications and interconnects pose increasing requirements on reduction of footprint, power dissipation and cost, as well as increased bandwidth. Nanophotonics integrated photonics has been viewed as a solution to this, capitalizing on development in nanotechnology and an increased understanding of light matter interaction on the nanoscale. The latter can be exemplified by plasmonics and low dimensional semiconductors such as quantum dots (QDs). In this scenario the development of improved electrooptic materials is of great importance, the electrooptic polymers being an example, since they potentially offer superior properties for optical phase modulators in terms of power and integratability. Phase modulators are essential for e.g. the rapidly developing advanced modulation formats, since phase modulation basically can generate any type of modulation. The electrooptic polymers, in combination with plasmonics nanoparticle array waveguides or nanostructured hybrid plasmonic media can give extremely compact and low power dissipation modulators. Low-dimensional semiconductors, e.g. in the shape of QDs, can be employed for modulation or switching functions, offering possibilities for scaling to 2 or 3 dimensions for advanced switching functions. In both the high field confinement plasmonics and QDs, the nanosizing is due to nearfield interactions, albeit being of different physical origin in the two cases. Epitaxial integration of III-V structures on Si plays an important role in developing high-performance light sources on silicon, eventually integrated with silicon electronics. A brief remark on all-optical vs. electronically controlled optical switching systems is also given.

Fast infrared response of YBCO thin films

NASA Technical Reports Server (NTRS)

Ballentine, P. H.; Kadin, A. M.; Donaldson, W. R.; Scofield, J. H.; Bajuk, L.

1990-01-01

The response to short infrared pulses of some epitaxial YBCO films prepared by sputter deposition and by electron-beam evaporation is reported. The response is found to be essentially bolometric on the ns timescale, with some indirect hints of nonequilibrium electron transport on the ps scale. Fast switching could be obtained either by biasing the switch close to the critical current or by cooling the film below about 20 K. These results are encouraging for potential application to a high-current optically-triggered opening switch.

Ultrananocrystalline diamond films with optimized dielectric properties for advanced RF MEMS capacitive switches

DOEpatents

Sumant, Anirudha V.; Auciello, Orlando H.; Mancini, Derrick C.

2013-01-15

An efficient deposition process is provided for fabricating reliable RF MEMS capacitive switches with multilayer ultrananocrystalline (UNCD) films for more rapid recovery, charging and discharging that is effective for more than a billion cycles of operation. Significantly, the deposition process is compatible for integration with CMOS electronics and thereby can provide monolithically integrated RF MEMS capacitive switches for use with CMOS electronic devices, such as for insertion into phase array antennas for radars and other RF communication systems.

Digital switched hydraulics

NASA Astrophysics Data System (ADS)

Pan, Min; Plummer, Andrew

2018-06-01

This paper reviews recent developments in digital switched hydraulics particularly the switched inertance hydraulic systems (SIHSs). The performance of SIHSs is presented in brief with a discussion of several possible configurations and control strategies. The soft switching technology and high-speed switching valve design techniques are discussed. Challenges and recommendations are given based on the current research achievements.

A new coupling mechanism between two graphene electron waveguides for ultrafast switching

NASA Astrophysics Data System (ADS)

Huang, Wei; Liang, Shi-Jun; Kyoseva, Elica; Ang, Lay Kee

2018-03-01

In this paper, we report a novel coupling between two graphene electron waveguides, in analogy the optical waveguides. The design is based on the coherent quantum mechanical tunneling of Rabi oscillation between the two graphene electron waveguides. Based on this coupling mechanism, we propose that it can be used as an ultrafast electronic switching device. Based on a modified coupled mode theory, we construct a theoretical model to analyze the device characteristics, and predict that the switching speed is faster than 1 ps and the on-off ratio exceeds 106. Due to the long mean free path of electrons in graphene at room temperature, the proposed design avoids the limitation of low temperature operation required in the traditional design by using semiconductor quantum-well structure. The layout of our design is similar to that of a standard complementary metal-oxide-semiconductor transistor that should be readily fabricated with current state-of-art nanotechnology.

Motivation of Students Who Switch from Engineering to Engineering Technology

ERIC Educational Resources Information Center

Ramirez, Nichole

2017-01-01

A set of studies is reported describing the demographics, outcomes, and motivations of students who start in engineering and switch their major to engineering technology. There has been extensive research in engineering persistence, but little focus has been given to the "T" in STEM. Most research combines technology with other science…

Fast packet switch architectures for broadband integrated services digital networks

NASA Technical Reports Server (NTRS)

Tobagi, Fouad A.

1990-01-01

Background information on networking and switching is provided, and the various architectures that have been considered for fast packet switches are described. The focus is solely on switches designed to be implemented electronically. A set of definitions and a brief description of the functionality required of fast packet switches are given. Three basic types of packet switches are identified: the shared-memory, shared-medium, and space-division types. Each of these is described, and examples are given.

An ultrafast programmable electrical tester for enabling time-resolved, sub-nanosecond switching dynamics and programming of nanoscale memory devices.

PubMed

Shukla, Krishna Dayal; Saxena, Nishant; Manivannan, Anbarasu

2017-12-01

Recent advancements in commercialization of high-speed non-volatile electronic memories including phase change memory (PCM) have shown potential not only for advanced data storage but also for novel computing concepts. However, an in-depth understanding on ultrafast electrical switching dynamics is a key challenge for defining the ultimate speed of nanoscale memory devices that demands for an unconventional electrical setup, specifically capable of handling extremely fast electrical pulses. In the present work, an ultrafast programmable electrical tester (PET) setup has been developed exceptionally for unravelling time-resolved electrical switching dynamics and programming characteristics of nanoscale memory devices at the picosecond (ps) time scale. This setup consists of novel high-frequency contact-boards carefully designed to capture extremely fast switching transient characteristics within 200 ± 25 ps using time-resolved current-voltage measurements. All the instruments in the system are synchronized using LabVIEW, which helps to achieve various programming characteristics such as voltage-dependent transient parameters, read/write operations, and endurance test of memory devices systematically using short voltage pulses having pulse parameters varied from 1 ns rise/fall time and 1.5 ns pulse width (full width half maximum). Furthermore, the setup has successfully demonstrated strikingly one order faster switching characteristics of Ag 5 In 5 Sb 60 Te 30 (AIST) PCM devices within 250 ps. Hence, this novel electrical setup would be immensely helpful for realizing the ultimate speed limits of various high-speed memory technologies for future computing.

An ultrafast programmable electrical tester for enabling time-resolved, sub-nanosecond switching dynamics and programming of nanoscale memory devices

NASA Astrophysics Data System (ADS)

Shukla, Krishna Dayal; Saxena, Nishant; Manivannan, Anbarasu

2017-12-01

Recent advancements in commercialization of high-speed non-volatile electronic memories including phase change memory (PCM) have shown potential not only for advanced data storage but also for novel computing concepts. However, an in-depth understanding on ultrafast electrical switching dynamics is a key challenge for defining the ultimate speed of nanoscale memory devices that demands for an unconventional electrical setup, specifically capable of handling extremely fast electrical pulses. In the present work, an ultrafast programmable electrical tester (PET) setup has been developed exceptionally for unravelling time-resolved electrical switching dynamics and programming characteristics of nanoscale memory devices at the picosecond (ps) time scale. This setup consists of novel high-frequency contact-boards carefully designed to capture extremely fast switching transient characteristics within 200 ± 25 ps using time-resolved current-voltage measurements. All the instruments in the system are synchronized using LabVIEW, which helps to achieve various programming characteristics such as voltage-dependent transient parameters, read/write operations, and endurance test of memory devices systematically using short voltage pulses having pulse parameters varied from 1 ns rise/fall time and 1.5 ns pulse width (full width half maximum). Furthermore, the setup has successfully demonstrated strikingly one order faster switching characteristics of Ag5In5Sb60Te30 (AIST) PCM devices within 250 ps. Hence, this novel electrical setup would be immensely helpful for realizing the ultimate speed limits of various high-speed memory technologies for future computing.

An Electrically Switchable Metal-Organic Framework

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fernandez, CA; Martin, PC; Schaef, T

2014-08-19

Crystalline metal organic framework (MOF) materials containing interconnected porosity can be chemically modified to promote stimulus-driven (light, magnetic or electric fields) structural transformations that can be used in a number of devices. Innovative research strategies are now focused on understanding the role of chemical bond manipulation to reversibly alter the free volume in such structures of critical importance for electro-catalysis, molecular electronics, energy storage technologies, sensor devices and smart membranes. In this letter, we study the mechanism for which an electrically switchable MOF composed of Cu(TCNQ) (TCNQ = 7,7,8,8-tetracyanoquinodimethane) transitions from a high-resistance state to a conducting state in amore » reversible fashion by an applied potential. The actual mechanism for this reversible electrical switching is still not understood even though a number of reports are available describing the application of electric-field-induced switching of Cu(TCNQ) in device fabrication.« less

An Electrically Switchable Metal-Organic Framework

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fernandez, Carlos A.; Martin, Paul F.; Schaef, Herbert T.

2014-08-19

Crystalline metal organic framework (MOF) materials containing interconnected porosity can be chemically modified to promote stimulus-driven (light, magnetic or electric fields) structural transformations that can be used in a number of devices. Innovative research strategies are now focused on understanding the role of chemical bond manipulation to reversibly alter the free volume in such structures of critical importance for electro-catalysis, molecular electronics, energy storage technologies, sensor devices and smart membranes. In this letter, we study the mechanism for which an electrically switchable MOF composed of Cu(TCNQ) (TCNQ 5 7,7,8,8-tetracyanoquinodimethane) transitions from a high-resistance state to a conducting state in amore » reversible fashion by an applied potential. The actual mechanism for this reversible electrical switching is still not understood even though a number of reports are available describing the application of electric-field-induced switching of Cu(TCNQ) in device fabrication.« less

Wheelchair-mounted robotic arm to hold and move a communication device - final design.

PubMed

Barrett, Graham; Kurley, Kyle; Brauchie, Casey; Morton, Scott; Barrett, Steven

2015-01-01

At the 51st Rocky Mountain Bioengineering Symposium we presented a preliminary design for a robotic arm to assist an individual living within an assistive technology smart home. The individual controls much of their environment with a Dynavox Maestro communication device. However, the device obstructs the individual’s line of site when navigating about the smart home. A robotic arm was developed to move the communication device in and out of the user’s field of view as desired. The robotic arm is controlled by a conveniently mounted jelly switch. The jelly switch sends control signals to a four state (up, off, down, off) single-axis robotic arm interfaced to a DC motor by high power electronic relays. This paper describes the system, control circuitry, and multiple safety features. The arm will be delivered for use later in 2015.

An Electrically Switchable Metal-Organic Framework

NASA Astrophysics Data System (ADS)

Fernandez, Carlos A.; Martin, Paul C.; Schaef, Todd; Bowden, Mark E.; Thallapally, Praveen K.; Dang, Liem; Xu, Wu; Chen, Xilin; McGrail, B. Peter

2014-08-01

Crystalline metal organic framework (MOF) materials containing interconnected porosity can be chemically modified to promote stimulus-driven (light, magnetic or electric fields) structural transformations that can be used in a number of devices. Innovative research strategies are now focused on understanding the role of chemical bond manipulation to reversibly alter the free volume in such structures of critical importance for electro-catalysis, molecular electronics, energy storage technologies, sensor devices and smart membranes. In this letter, we study the mechanism for which an electrically switchable MOF composed of Cu(TCNQ) (TCNQ = 7,7,8,8-tetracyanoquinodimethane) transitions from a high-resistance state to a conducting state in a reversible fashion by an applied potential. The actual mechanism for this reversible electrical switching is still not understood even though a number of reports are available describing the application of electric-field-induced switching of Cu(TCNQ) in device fabrication.

Development and testing of a 180-volt dc electronic circuit breaker with a 335-ampere carry and 1200-ampere interrupt rating

NASA Technical Reports Server (NTRS)

Brush, A. S.; Phillips, R. L.

1991-01-01

NASA Lewis Research Center and associated contractors have conducted a program to assess the potential requirements for a high-current switch to conceptually design a switch using the best existing technology, and to build and demonstrate a breadboard which meets the requirements. The result is the high current remote bus isolator (HRBI). The HRBI is rated at 180 V dc, 335 A continuous with a 1200 A interrupt rating. It also incorporates remote-control and protective features called for by the Space Station Freedom PMAD dc test bed design. Two breadboard 335 A circuit breakers were built and tested that demonstrate a promising concept of paralleled current-limiting modules. The units incorporated all control and protective features required by advanced aerospace power systems. Component stresses in each unit were determined by design, and are consistent with a life of many thousands of fault operations.

Quantitative Observation of Threshold Defect Behavior in Memristive Devices with Operando X-ray Microscopy.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Huajun; Dong, Yongqi; Cherukara, Matthew J.

Memristive devices are an emerging technology that enables both rich interdisciplinary science and novel device functionalities, such as nonvolatile memories and nanoionics-based synaptic electronics. Recent work has shown that the reproducibility and variability of the devices depend sensitively on the defect structures created during electroforming as well as their continued evolution under dynamic electric fields. However, a fundamental principle guiding the material design of defect structures is still lacking due to the difficulty in understanding dynamic defect behavior under different resistance states. Here, we unravel the existence of threshold behavior by studying model, single-crystal devices: resistive switching requires that themore » pristine oxygen vacancy concentration reside near a critical value. Theoretical calculations show that the threshold oxygen vacancy concentration lies at the boundary for both electronic and atomic phase transitions. Through operando, multimodal X-ray imaging, we show that field tuning of the local oxygen vacancy concentration below or above the threshold value is responsible for switching between different electrical states. These results provide a general strategy for designing functional defect structures around threshold concentrations to create dynamic, field-controlled phases for memristive devices.« less

Distortion Properties of GaN Switches at High-Temperatures

NASA Astrophysics Data System (ADS)

Kameche, Mohamed

2006-08-01

The origins of HEMT distortion in passive control applications as SPST switch are presented in this paper. Also, this paper describes the change of the AlGaN/GaN HEMT switch distortion properties (second-and third distortion intercept points) over a wide range of temperature. The results indicate that the change in second-and third-order distortion intercept points is smaller (about 2dBm) over a wide range of temperature from -50 to +300°C. A comparison of the GaN-based HEMT switch with InP-and GaAs-HEMT switches shows that the GaN technology generates lower distortion than its InP and GaAs technologies counterpart.

Electron transport and light-harvesting switches in cyanobacteria

PubMed Central

Mullineaux, Conrad W.

2014-01-01

Cyanobacteria possess multiple mechanisms for regulating the pathways of photosynthetic and respiratory electron transport. Electron transport may be regulated indirectly by controlling the transfer of excitation energy from the light-harvesting complexes, or it may be more directly regulated by controlling the stoichiometry, localization, and interactions of photosynthetic and respiratory electron transport complexes. Regulation of the extent of linear vs. cyclic electron transport is particularly important for controlling the redox balance of the cell. This review discusses what is known of the regulatory mechanisms and the timescales on which they occur, with particular regard to the structural reorganization needed and the constraints imposed by the limited mobility of membrane-integral proteins in the crowded thylakoid membrane. Switching mechanisms requiring substantial movement of integral thylakoid membrane proteins occur on slower timescales than those that require the movement only of cytoplasmic or extrinsic membrane proteins. This difference is probably due to the restricted diffusion of membrane-integral proteins. Multiple switching mechanisms may be needed to regulate electron transport on different timescales. PMID:24478787

High-Speed, high-power, switching transistor

NASA Technical Reports Server (NTRS)

Carnahan, D.; Ohu, C. K.; Hower, P. L.

1979-01-01

Silicon transistor rate for 200 angstroms at 400 to 600 volts combines switching speed of transistors with ruggedness, power capacity of thyristor. Transistor introduces unique combination of increased power-handling capability, unusally low saturation and switching losses, and submicrosecond switching speeds. Potential applications include high power switching regulators, linear amplifiers, chopper controls for high frequency electrical vehicle drives, VLF transmitters, RF induction heaters, kitchen cooking ranges, and electronic scalpels for medical surgery.

Resistive switching behavior in oxygen ion irradiated TiO2-x films

NASA Astrophysics Data System (ADS)

Barman, A.; Saini, C. P.; Sarkar, P. K.; Bhattacharjee, G.; Bhattacharya, G.; Srivastava, S.; Satpati, B.; Kanjilal, D.; Ghosh, S. K.; Dhar, S.; Kanjilal, A.

2018-02-01

The room temperature resistive switching behavior in 50 keV O+-ion irradiated TiO2-x layers at an ion fluence of 5  ×  1016 ions cm-2 is reported. A clear transformation from columnar to layered polycrystalline films is revealed by transmission electron microscopy with increasing ion fluence, while the complementary electron energy loss spectroscopy suggests an evolution of oxygen vacancy (OV) in TiO2-x matrix. This is further verified by determining electron density with the help of x-ray reflectivity. Both local and device current-voltage measurements illustrate that the ion-beam induced OVs play a key role in bistable resistive switching mechanism.

FELIX: The new detector readout system for the ATLAS experiment

NASA Astrophysics Data System (ADS)

Ryu, Soo; ATLAS TDAQ Collaboration

2017-10-01

After the Phase-I upgrades (2019) of the ATLAS experiment, the Front-End Link eXchange (FELIX) system will be the interface between the data acquisition system and the detector front-end and trigger electronics. FELIX will function as a router between custom serial links and a commodity switch network using standard technologies (Ethernet or Infiniband) to communicate with commercial data collecting and processing components. The system architecture of FELIX will be described and the status of the firmware implementation and hardware development currently in progress will be presented.

Nanoionics-Based Switches for Radio-Frequency Applications

NASA Technical Reports Server (NTRS)

Nessel, James; Lee, Richard

2010-01-01

Nanoionics-based devices have shown promise as alternatives to microelectromechanical systems (MEMS) and semiconductor diode devices for switching radio-frequency (RF) signals in diverse systems. Examples of systems that utilize RF switches include phase shifters for electronically steerable phased-array antennas, multiplexers, cellular telephones and other radio transceivers, and other portable electronic devices. Semiconductor diode switches can operate at low potentials (about 1 to 3 V) and high speeds (switching times of the order of nanoseconds) but are characterized by significant insertion loss, high DC power consumption, low isolation, and generation of third-order harmonics and intermodulation distortion (IMD). MEMS-based switches feature low insertion loss (of the order of 0.2 dB), low DC power consumption (picowatts), high isolation (>30 dB), and low IMD, but contain moving parts, are not highly reliable, and must be operated at high actuation potentials (20 to 60 V) generated and applied by use of complex circuitry. In addition, fabrication of MEMS is complex, involving many processing steps. Nanoionics-based switches offer the superior RF performance and low power consumption of MEMS switches, without need for the high potentials and complex circuitry necessary for operation of MEMS switches. At the same time, nanoionics-based switches offer the high switching speed of semiconductor devices. Also, like semiconductor devices, nanoionics-based switches can be fabricated relatively inexpensively by use of conventional integrated-circuit fabrication techniques. More over, nanoionics-based switches have simple planar structures that can easily be integrated into RF power-distribution circuits.

Electronic interaction and bipolar resistive switching in copper oxide-multilayer graphene hybrid interface: Graphene as an oxygen ion storage and blocking layer

NASA Astrophysics Data System (ADS)

Singh, Bharti; Mehta, B. R.; Govind, Feng, X.; Müllen, Klaus

2011-11-01

This study reports a bipolar resistive switching device based on copper oxide (CuO)-multilayer graphene (MLG) hybrid interface in complete contrast to the ohmic and rectifying characteristics of junctions based on individual MLG and CuO layers. The observed shift and the occurrence of additional O1s, Cu2p, and C1s core level peaks indicate electronic interaction at the hybrid interfacial layer. Large changes in the resistive switching parameters on changing the ambient conditions from air to vacuum establish the important role of MLG as oxygen ion storage and blocking layer towards the observed resistive switching effect.

77 FR 52619 - Make Inoperative Exemptions; Retrofit On-Off Switches for Air Bags

Federal Register 2010, 2011, 2012, 2013, 2014

2012-08-30

... improved frontal crash protection for all occupants, by means that include advanced air bag technology. In... of advanced air bag technology and the retrofit switch brochures and forms that were included in Part.... We will also reexamine the at-risk groups in light of advanced air bag technology, the brochures and...

Gravitational Influences on the Growth of Polydiacetylene Films by Ultraviolet Solution Polymerization

NASA Technical Reports Server (NTRS)

Frazier, Donald O.

2000-01-01

Technically, the field of integrated optics using organic/polymer materials as a new means of information processing, has emerged as of vital importance to optical computers, optical switching, optical communications, the defense industry, etc. The goal is to replace conventional electronic integrated circuits and wires by equivalent miniaturized optical integrated circuits and fibers, offering larger bandwidths, more compactness and reliability, immunity to electromagnetic interference and less cost. From the Code E perspective, this research area represents an opportunity to marry "front-line" education in science and technology with national scientific and technological interests while maximizing human resources utilization. This can be achieved by the development of untapped resources for scientific research - such as minorities, women, and universities traditionally uninvolved in scientific research.

Network speech systems technology program

NASA Astrophysics Data System (ADS)

Weinstein, C. J.

1981-09-01

This report documents work performed during FY 1981 on the DCA-sponsored Network Speech Systems Technology Program. The two areas of work reported are: (1) communication system studies in support of the evolving Defense Switched Network (DSN) and (2) design and implementation of satellite/terrestrial interfaces for the Experimental Integrated Switched Network (EISN). The system studies focus on the development and evaluation of economical and endurable network routing procedures. Satellite/terrestrial interface development includes circuit-switched and packet-switched connections to the experimental wideband satellite network. Efforts in planning and coordination of EISN experiments are reported in detail in a separate EISN Experiment Plan.

InP-based millimeter-wave PIN diodes for switching and phase-shifting application

NASA Astrophysics Data System (ADS)

Pavlidis, Dimitris; Alekseev, Egor; Hong, Kyushik; Cui, Delong

1997-10-01

InP-based PIN design, technology and circuit implementation were addressed and successfully applied to millimeter-wave MMIC switches and phase shifters. A wet etchant based via technology was developed and applied to InP MMIC fabrication. MOCVD and MBE material growth was used for PIN realization and PIN specific growth optimization is discussed. Experimentally determined electrical characteristics and good performance is presented for a variety of InP-based PIN MMICs including coplanar and microstrip Ka-band SPST switches, W-band microstrip SPST switches and a 90-degree phase shifter.

Low inductance power electronics assembly

DOEpatents

Herron, Nicholas Hayden; Mann, Brooks S.; Korich, Mark D.; Chou, Cindy; Tang, David; Carlson, Douglas S.; Barry, Alan L.

2012-10-02

A power electronics assembly is provided. A first support member includes a first plurality of conductors. A first plurality of power switching devices are coupled to the first support member. A first capacitor is coupled to the first support member. A second support member includes a second plurality of conductors. A second plurality of power switching devices are coupled to the second support member. A second capacitor is coupled to the second support member. The first and second pluralities of conductors, the first and second pluralities of power switching devices, and the first and second capacitors are electrically connected such that the first plurality of power switching devices is connected in parallel with the first capacitor and the second capacitor and the second plurality of power switching devices is connected in parallel with the second capacitor and the first capacitor.

Switching behaviors of graphene-boron nitride nanotube heterojunctions

DOE PAGES

Parashar, Vyom; Durand, Corentin P.; Hao, Boyi; ...

2015-07-20

High electron mobility of graphene has enabled their application in high-frequency analogue devices but their gapless nature has hindered their use in digital switches. In contrast, the structural analogous, h-BN sheets and BN nanotubes (BNNTs) are wide band gap insulators. Here we show that the growth of electrically insulating BNNTs on graphene can enable the use of graphene as effective digital switches. These graphene-BNNT heterojunctions were characterized at room temperature by four-probe scanning tunneling microscopy (4-probe STM) under real-time monitoring of scanning electron microscopy (SEM). A switching ratio as high as 105 at a turn-on voltage as low as 0.5more » V were recorded. Simulation by density functional theory (DFT) suggests that mismatch of the density of states (DOS) is responsible for these novel switching behaviors.« less

Electronic transport properties of a quinone-based molecular switch

NASA Astrophysics Data System (ADS)

Zheng, Ya-Peng; Bian, Bao-An; Yuan, Pei-Pei

2016-09-01

In this paper, we carried out first-principles calculations based on density functional theory and non-equilibrium Green's function to investigate the electronic transport properties of a quinone-based molecule sandwiched between two Au electrodes. The molecular switch can be reversibly switched between the reduced hydroquinone (HQ) and oxidized quinone (Q) states via redox reactions. The switching behavior of two forms is analyzed through their I- V curves, transmission spectra and molecular projected self-consistent Hamiltonian at zero bias. Then we discuss the transmission spectra of the HQ and Q forms at different bias, and explain the oscillation of current according to the transmission eigenstates of LUMO energy level for Q form. The results suggest that this kind of a quinone-based molecule is usable as one of the good candidates for redox-controlled molecular switches.

47 CFR 36.121 - General.

Code of Federal Regulations, 2013 CFR

2013-10-01

...: Central Office Switching Account 2210. Non-digital Switching Account 2211. Digital Electronic Switching... Account 2231. Circuit Equipment Account 2232. (b) Records of the cost of central office equipment are... directly to that category, e.g., 130 volt power supply provided for circuit equipment. The cost of...

47 CFR 36.121 - General.

Code of Federal Regulations, 2014 CFR

2014-10-01

...: Central Office Switching Account 2210. Non-digital Switching Account 2211. Digital Electronic Switching... Account 2231. Circuit Equipment Account 2232. (b) Records of the cost of central office equipment are... directly to that category, e.g., 130 volt power supply provided for circuit equipment. The cost of...

47 CFR 36.121 - General.

Code of Federal Regulations, 2011 CFR

2011-10-01

...: Central Office Switching Account 2210. Non-digital Switching Account 2211. Digital Electronic Switching... Account 2231. Circuit Equipment Account 2232. (b) Records of the cost of central office equipment are... directly to that category, e.g., 130 volt power supply provided for circuit equipment. The cost of...

47 CFR 36.121 - General.

Code of Federal Regulations, 2010 CFR

2010-10-01

...: Central Office Switching Account 2210. Non-digital Switching Account 2211. Digital Electronic Switching... Account 2231. Circuit Equipment Account 2232. (b) Records of the cost of central office equipment are... directly to that category, e.g., 130 volt power supply provided for circuit equipment. The cost of...

47 CFR 36.121 - General.

Code of Federal Regulations, 2012 CFR

2012-10-01

...: Central Office Switching Account 2210. Non-digital Switching Account 2211. Digital Electronic Switching... Account 2231. Circuit Equipment Account 2232. (b) Records of the cost of central office equipment are... directly to that category, e.g., 130 volt power supply provided for circuit equipment. The cost of...

Effects of the electron-phonon coupling activation in collision cascades

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zarkadoula, Eva; Samolyuk, German; Weber, William J.

Using the two-temperature (2T-MD) model in molecular dynamics simulations, here we investigate the condition of switching the electronic stopping term off when the electron-phonon coupling is activated in the damage production due to 50 keV Ni ion cascades in Ni and equiatomic NiFe. Additionally we investigate the effect of the electron-phonon coupling activation time in the damage production. We find that the switching condition has negligible effect in the produced damage, while the choice of the activation time of the electron-phonon coupling can affect the amount of surviving damage.

Effects of the electron-phonon coupling activation in collision cascades

DOE PAGES

Zarkadoula, Eva; Samolyuk, German; Weber, William J.

2017-04-20

Using the two-temperature (2T-MD) model in molecular dynamics simulations, here we investigate the condition of switching the electronic stopping term off when the electron-phonon coupling is activated in the damage production due to 50 keV Ni ion cascades in Ni and equiatomic NiFe. Additionally we investigate the effect of the electron-phonon coupling activation time in the damage production. We find that the switching condition has negligible effect in the produced damage, while the choice of the activation time of the electron-phonon coupling can affect the amount of surviving damage.

Organic-based molecular switches for molecular electronics.

PubMed

Fuentes, Noelia; Martín-Lasanta, Ana; Alvarez de Cienfuegos, Luis; Ribagorda, Maria; Parra, Andres; Cuerva, Juan M

2011-10-05

In a general sense, molecular electronics (ME) is the branch of nanotechnology which studies the application of molecular building blocks for the fabrication of electronic components. Among the different types of molecules, organic compounds have been revealed as promising candidates for ME, due to the easy access, great structural diversity and suitable electronic and mechanical properties. Thanks to these useful capabilities, organic molecules have been used to emulate electronic devices at the nanoscopic scale. In this feature article, we present the diverse strategies used to develop organic switches towards ME with special attention to non-volatile systems.

Electron beam magnetic switch for a plurality of free electron lasers

DOEpatents

Schlitt, Leland G.

1984-01-01

Apparatus for forming and utilizing a sequence of electron beam segments, each of the same temporal length (substantially 15 nsec), with consecutive beams being separated by a constant time interval of the order of 3 nsec. The beam sequence is used for simultaneous inputs to a plurality of wiggler magnet systems that also accept the laser beams to be amplified by interaction with the co-propagating electron beams. The electron beams are arranged substantially in a circle to allow proper distribution of and simultaneous switching out of the beam segments to their respective wiggler magnets.

Electron-impact ionization and electron attachment cross sections of radicals important in transient gaseous discharges

NASA Technical Reports Server (NTRS)

Lee, Long C.; Srivastava, Santosh K.

1990-01-01

Electron-impact ionization and electron attachment cross sections of radicals and excited molecules were measured using an apparatus that consists of an electron beam, a molecular beam and a laser beam. The information obtained is needed for the pulse power applications in the areas of high power gaseous discharge switches, high energy lasers, particle beam experiments, and electromagnetic pulse systems. The basic data needed for the development of optically-controlled discharge switches were also investigated. Transient current pulses induced by laser irradiation of discharge media were observed and applied for the study of electron-molecule reaction kinetics in gaseous discharges.

Wide Bandgap Extrinsic Photoconductive Switches

NASA Astrophysics Data System (ADS)

Sullivan, James Stephen

Wide Bandgap Extrinsic Photoconductive Switches Semi-insulating Gallium Nitride, 4H and 6H Silicon Carbide are attractive materials for compact, high voltage, extrinsic, photoconductive switches due to their wide bandgap, high dark resistance, high critical electric field strength and high electron saturation velocity. These wide bandgap semiconductors are made semi-insulating by the addition of vanadium (4H and 6H-SiC) and iron (2H-GaN) impurities that form deep acceptors. These deep acceptors trap electrons donated from shallow donor impurities. The electrons can be optically excited from these deep acceptor levels into the conduction band to transition the wide bandgap semiconductor materials from a semi-insulating to a conducting state. Extrinsic photoconductive switches with opposing electrodes have been constructed using vanadium compensated 6H-SiC and iron compensated 2H-GaN. These extrinsic photoconductive switches were tested at high voltage and high power to determine if they could be successfully used as the closing switch in compact medical accelerators. The successful development of a vanadium compensated, 6H-SiC extrinsic photoconductive switch for use as a closing switch for compact accelerator applications was realized by improvements made to the vanadium, nitrogen and boron impurity densities. The changes made to the impurity densities were based on the physical intuition outlined and simple rate equation models. The final 6H-SiC impurity 'recipe' calls for vanadium, nitrogen and boron densities of 2.5 e17 cm-3, 1.25e17 cm-3 and ≤ 1e16 cm-3, respectively. This recipe was originally developed to maximize the quantum efficiency of the vanadium compensated 6H-SiC, while maintaining a thermally stable semi-insulating material. The rate equation models indicate that, besides increasing the quantum efficiency, the impurity recipe should be expected to also increase the carrier recombination time. Three generations of 6H-SiC materials were tested. The third generation vanadium compensated 6H-SiC has average impurity densities close to the recipe values. Extrinsic photoconductive switches constructed from the third generation vanadium compensated, 6H-SiC, 1 mm thick, 1 cm2, substrates have achieved high power operation at 16 kV with pulsed currents exceeding 1400 Amperes and a minimum on resistance of 1 ohm. The extrinsic photoconductive switch performance of the third generation 6H-SiC material was improved by a factor of up to 50 for excitation at the 532 nm wavelength compared to the initial 6H-SiC material. Switches based on this material have been incorporated into a prototype compact proton medical accelerator being developed by the Compact Particle Acceleration Corporation (CPAC). The vanadium compensated, 6H-SiC, extrinsic photoconductive switch operates differently when excited by 1064, or 532 nm, wavelength light. The 6H-SiC extrinsic photoconductive switch is a unipolar device when excited with 1064 nm light. The carriers are electrons excited from filled vanadium acceptor levels and other electron traps located within 1.17 eV of the conduction band. The switch is bipolar at 532 nm since the carriers consist of holes, as well as electrons. The holes are primarily generated by the excitation of valence band electrons into empty trap/acceptor levels and by two-photon absorption. Carrier generation by two-photon absorption becomes more important at high applied optical intensity at 532 nm and contributes to the supralinear behavior of switch conductance as a function of optical power. The 6H-SiC switch material is trap dominated at low nitrogen to vanadium ratios. The trap dominated vanadium compensated 6H-SiC exhibits low quantum efficiency when excited with 1064 and 532 nm light and has a carrier recombination time of ˜ 150 - 300 ps. The vanadium compensated 6H-SiC transitions to an impurity dominated material as the ratio of nitrogen to vanadium is increased to 0.5. The increased nitrogen doping produces a material with much higher quantum efficiency and carrier recombination time of 0.9 to 1.0 ns. The iron compensated 2H-GaN did not perform well as an extrinsic photoconductive switch. The density of carriers generated at 1064 nm was, low indicating that there were very few electrons trapped in the iron acceptor level located at 0.5 - 0.6 eV below the conduction band. Carrier generation at 532 nm was dominated by two photon absorption resulting in the switch conductance increasing as the square of applied optical intensity. A minimum switch resistance of 0.8 ohms was calculated for the 400 nm thick, 1.2 by 1.2 cm, 2H-GaN switch for an applied optical intensity of 41.25 MW/cm2. An optical intensity of ˜ 70 MW/cm2 at 532 nm would be required to achieve a 0.8 ohm on resistance for a 1 mm thick, 1 cm2, 2H-GaN switch.

Thermionic gas switch

DOEpatents

Hatch, George L.; Brummond, William A.; Barrus, Donald M.

1986-01-01

A temperature responsive thermionic gas switch having folded electron emitting surfaces. An ionizable gas is located between the emitter and an interior surface of a collector, coaxial with the emitter. In response to the temperature exceeding a predetermined level, sufficient electrons are derived from the emitter to cause the gas in the gap between the emitter and collector to become ionized, whereby a very large increase in current in the gap occurs. Due to the folded emitter surface area of the switch, increasing the "on/off" current ratio and adjusting the "on" current capacity is accomplished.

Design, Modeling, and Fabrication of Chemical Vapor Deposition Grown MoS2 Circuits with E-Mode FETs for Large-Area Electronics.

PubMed

Yu, Lili; El-Damak, Dina; Radhakrishna, Ujwal; Ling, Xi; Zubair, Ahmad; Lin, Yuxuan; Zhang, Yuhao; Chuang, Meng-Hsi; Lee, Yi-Hsien; Antoniadis, Dimitri; Kong, Jing; Chandrakasan, Anantha; Palacios, Tomas

2016-10-12

Two-dimensional electronics based on single-layer (SL) MoS 2 offers significant advantages for realizing large-scale flexible systems owing to its ultrathin nature, good transport properties, and stable crystalline structure. In this work, we utilize a gate first process technology for the fabrication of highly uniform enhancement mode FETs with large mobility and excellent subthreshold swing. To enable large-scale MoS 2 circuit, we also develop Verilog-A compact models that accurately predict the performance of the fabricated MoS 2 FETs as well as a parametrized layout cell for the FET to facilitate the design and layout process using computer-aided design (CAD) tools. Using this CAD flow, we designed combinational logic gates and sequential circuits (AND, OR, NAND, NOR, XNOR, latch, edge-triggered register) as well as switched capacitor dc-dc converter, which were then fabricated using the proposed flow showing excellent performance. The fabricated integrated circuits constitute the basis of a standard cell digital library that is crucial for electronic circuit design using hardware description languages. The proposed design flow provides a platform for the co-optimization of the device fabrication technology and circuits design for future ubiquitous flexible and transparent electronics using two-dimensional materials.

Picoampere Resistive Switching Characteristics Realized with Vertically Contacted Carbon Nanotube Atomic Force Microscope Probe

NASA Astrophysics Data System (ADS)

Nakano, Haruhisa; Takahashi, Makoto; Sato, Motonobu; Kotsugi, Masato; Ohkochi, Takuo; Muro, Takayuki; Nihei, Mizuhisa; Yokoyama, Naoki

2013-11-01

The resistive switching characteristics of a TiO2/Ti structure have been investigated using a conductive atomic force microscopy (AFM) system with 5-nm-diameter carbon nanotube (CNT) probes. The resistive switching showed bipolar resistive random access memory (ReRAM) behaviors with extremely low switching currents in the order of Picoamperes when voltages were applied. From transmission electron microscopy (TEM) observation, we confirmed that filament-like nanocrystals, having a diameter of about 10 nm, existed in TiO2 films at resistive switching areas after not only set operation but also reset operation. Moreover, photoemission electron microscopy (PEEM) analysis showed that the anatase-type TiO2 structure did not change after set and reset operations. From these results, we suggested that the Picoampere resistive switching occurred at the interface between the TiO2 dielectric and conductive nanocrystal without any structural changes in the TiO2 film and nanocrystal. The resistive switching mechanism we suggested is highly promising to realize extremely low-power-consumption ReRAMs with vertically contacted CNT electrodes.

Electro-optic Q-switch

NASA Technical Reports Server (NTRS)

Zou, Yingyin (Inventor); Chen, Qiushui (Inventor); Zhang, Run (Inventor); Jiang, Hua (Inventor)

2006-01-01

An electro-optic Q-switch for generating sequence of laser pulses was disclosed. The Q-switch comprises a quadratic electro-optic material and is connected with an electronic unit generating a radio frequency wave with positive and negative pulses alternatively. The Q-switch is controlled by the radio frequency wave in such a way that laser pulse is generated when the radio frequency wave changes its polarity.

Life's a switch. Experiences in NSF undergraduate design projects.

PubMed

Popp, Stephanie A; Barnes, Jennifer R; Barrett, Steven F; Laurin, Kathy M

2003-01-01

During the summer of 2002 Stephanie Popp and Jennifer Barnes developed a manual, "Life's a Switch," through a project funded by the National Science Foundation. This manual teaches people how to build their own cost effective assistive switches. Assistive switches are a form of assistive technology which includes any device that enhances a person's quality of life by improving the individual's mobility, ability to perform daily activities, enhancing communication, or allowing participation in education, vocational activities and recreation. One main goal of assistive technology is to provide opportunities for children with disabilities to explore, play, learn, and communicate with others. Switches are essential tools used to provide these opportunities. When a child with developmental disabilities understands the connection between the activation of a switch and the resulting action it triggers, the knowledge of cause and effect is gained. Therefore, the basis for all future learning is established [1]. One of the current problems facing assistive switch users is the cost of available items. This project provides more affordable solutions for switch users by teaching the families and educators of switch users how to make their own switches and adaptors in the "Life's a Switch" manual. For example, some assistive technology vendors sell large button switches from $25.00 to $45.00, tread switches for $40.00, and pillow switches for $35.00 [2]. Amazingly, all parts and tools used to make these assistive switches can be bought and made into personally designed assistive devices averaging a cost of around $10.00 [3]. A workshop to teach this manual was also developed. This workshop will spread awareness of the more affordable options this project sets forth. In September of 2002, the first workshop was held in a laboratory classroom at the University of Wyoming's College of Engineering. Each attendant was provided with a kit that included all essential tools and components needed to make an assistive switch. Workshops scheduled into 2003 will provide educational opportunities for participants as well as opportunities for improvement of the manual.

Gamma-ray irradiation of ohmic MEMS switches

NASA Astrophysics Data System (ADS)

Maciel, John J.; Lampen, James L.; Taylor, Edward W.

2012-10-01

Radio Frequency (RF) Microelectromechanical System (MEMS) switches are becoming important building blocks for a variety of military and commercial applications including switch matrices, phase shifters, electronically scanned antennas, switched filters, Automatic Test Equipment, instrumentation, cell phones and smart antennas. Low power consumption, large ratio of off-impedance to on-impedance, extreme linearity, low mass, small volume and the ability to be integrated with other electronics makes MEMS switches an attractive alternative to other mechanical and solid-state switches for a variety of space applications. Radant MEMS, Inc. has developed an electrostatically actuated broadband ohmic microswitch that has applications from DC through the microwave region. Despite the extensive earth based testing, little is known about the performance and reliability of these devices in space environments. To help fill this void, we have irradiated our commercial-off-the-shelf SPST, DC to 40 GHz MEMS switches with gamma-rays as an initial step to assessing static impact on RF performance. Results of Co-60 gamma-ray irradiation of the MEMS switches at photon energies ≥ 1.0 MeV to a total dose of ~ 118 krad(Si) did not show a statistically significant post-irradiation change in measured broadband, RF insertion loss, insertion phase, return loss and isolation.

Research on the electromagnetic radiation characteristics of the gas main switch of a capacitive intense electron-beam accelerator

NASA Astrophysics Data System (ADS)

Qiu, Yongfeng; Liu, Jinliang; Yang, Jianhua; Cheng, Xinbing; Li, Guolin

2017-11-01

Strong electromagnetic fields are radiated during the operation of the intense electron-beam accelerator (IEBA), which may lead to the nearby electronic devices out of order. In this paper, the research on the electromagnetic radiation characteristic of the gas main switch of a capacitive IEBA is carried out by the methods of theory analysis and experiment investigation. It is obtained that the gas main switch is the dominating radiation resource. In the absence of electromagnetic shielding for the gas main switch, when the pulse forming line of the IEBA is charged to 700 kV, the radiation field with amplitude of 3280 V/m, dominant frequency of 84 MHz and high frequency 100 MHz is obtained at a distance of 10 meters away from the gas main switch. The experimental results of the radiation field agree with the theoretical calculations. We analyze the achievements of several research groups and find that there is a relationship between the rise time (T) of the transient current of the gas main switch and the dominant frequency (F) of the radiation field, namely, F*T=1. Contrast experiment is carried out with a metal shield cover for the gas main switch. Experimental results show that for the shielded setup the radiation field reduces to 115 V/m, the dominant frequency increases to 86.5 MHz at a distance of 10 away meters from the gas main switch. These conclusions are beneficial for further research on the electromagnetic radiation and protection of the IEBA.

Switching Matrix For Optical Signals

NASA Technical Reports Server (NTRS)

Grove, Charles H.

1990-01-01

Proposed matrix of electronically controlled shutters switches signals in optical fibers between multiple input and output channels. Size, weight, and power consumption reduced. Device serves as building block for small, low-power, broad-band television- and data-signal-switching systems providing high isolation between nominally disconnected channels.

High Peak Power Test and Evaluation of S-band Waveguide Switches

NASA Astrophysics Data System (ADS)

Nassiri, A.; Grelick, A.; Kustom, R. L.; White, M.

1997-05-01

The injector and source of particles for the Advanced Photon Source is a 2856-MHz S-band electron-positron linear accelerator (linac) which produces electrons with energies up to 650 MeV or positrons with energies up to 450 MeV. To improve the linac rf system availability, an additional modulator-klystron subsystem is being constructed to provide a switchable hot spare unit for each of the five exsisting S-band transmitters. The switching of the transmitters will require the use of SF6-pressurized S-band waveguide switches at a peak operating power of 35 MW. Such rf switches have been successfully operated at other accelerator facilities but at lower peak powers. A test stand has been set up at the Stanford Linear Accelerator Center (SLAC) Klystron Factory to conduct tests comparing the power handling characteristics of two WR-284 and one WR-340 switches. Test results are presented and their implications for the design of the switching system are discussed.

Anode initiated surface flashover switch

DOEpatents

Brainard, John P.; Koss, Robert J.

2003-04-29

A high voltage surface flashover switch has a pair of electrodes spaced by an insulator. A high voltage is applied to an anode, which is smaller than the opposing, grounded, cathode. When a controllable source of electrons near the cathode is energized, the electrons are attracted to the anode where they reflect to the insulator and initiate anode to cathode breakdown.

Compact self-powered synchronous energy extraction circuit design with enhanced performance

NASA Astrophysics Data System (ADS)

Liu, Weiqun; Zhao, Caiyou; Badel, Adrien; Formosa, Fabien; Zhu, Qiao; Hu, Guangdi

2018-04-01

Synchronous switching circuit is viewed as an effective solution of enhancing the generator’s performance and providing better adaptability for load variations. A critical issue for these synchronous switching circuits is the self-powered realization. In contrast with other methods, the electronic breaker possesses the advantage of simplicity and reliability. However, beside the energy consumption of the electronic breakers, the parasitic capacitance decreases the available piezoelectric voltage. In this technical note, a new compact design of the self-powered switching circuit using electronic breaker is proposed. The envelope diodes are excluded and only a single envelope capacitor is used. The parasitic capacitance is reduced to half with boosted performance while the components are reduced with cost saved.

Effect of oxygen concentration on resistive switching behavior in silicon oxynitride film

NASA Astrophysics Data System (ADS)

Chen, Da; Huang, Shihua; He, Lü

2017-04-01

SiO{}xN{}y films with different oxygen concentrations were fabricated by reactive magnetron sputtering, and the resistive switching characteristics and conduction mechanism of Cu/SiO{}xN{}y/ITO devices were investigated. The Cu/SiO{}xN{}y/ITO device with SiO{}xN{}y deposited in 0.8-sccm O{}2 flow shows a reliable resistive switching behavior, including good endurance and retention properties. As the conductivity of SiO{}xN{}y increases with the increase of the oxygen content dynamical electron trapping and detrapping is suggested to be the conduction mechanism. The temperature dependent I-V measurement indicates that the carrier transport can be ascribed to the hopping conduction rather than the metallic conductive filament. Project supported by the Natural Science Foundation of Zhejiang Province (No. LY17F040001), the Open Project Program of Surface Physics Laboratory (National Key Laboratory) of Fudan University (No. KF2015_02), the Open Project Program of National Laboratory for Infrared Physics, Chinese Academy of Sciences (No. M201503), the Zhejiang Provincial Science and Technology Key Innovation Team (No. 2011R50012), and the Zhejiang Provincial Key Laboratory (No. 2013E10022).

A miniature continuous adiabatic demagnetization refrigerator with compact shielded superconducting magnets

NASA Astrophysics Data System (ADS)

Duval, Jean-Marc; Cain, Benjamin M.; Timbie, Peter T.

2004-10-01

Cryogenic detectors for astrophysics depend on cryocoolers capable of achieving temperatures below ~ 100 mK. In order to provide continuous cooling at 50 mK for space or laboratory applications, we are designing a miniature adiabatic demagnetization refrigerator (MADR) anchored at a reservoir at 5 K. Continuous cooling is obtained by the use of several paramagnetic pills placed in series with heat switches. All operations are fully electronic and this technology can be adapted fairly easily for a wide range of temperatures and cooling powers. We are focusing on reducing the size and mass of the cooler. For that purpose we have developed and tested magnetoresistive heat switches based on single crystals of tungsten. Several superconducting magnets are required for this cooler and we have designed and manufactured compact magnets. A special focus has been put on the reduction of parasitic magnetic fields in the cold stage, while minimizing the mass of the shields. A prototype continuous MADR, using magnetoresistive heat switches, small paramagnetic pills and compact magnets has been tested. A design of MADR that will provide ~ 5 uW of continuous cooling down to 50 mK is described.

A Study of Gamma-Ray Exposure of Cu-SiO2 Programmable Metallization Cells

NASA Astrophysics Data System (ADS)

Chen, W.; Barnaby, H. J.; Kozicki, M. N.; Edwards, A. H.; Gonzalez-Velo, Y.; Fang, R.; Holbert, K. E.; Yu, S.; Yu, W.

2015-12-01

The Cu-SiO2 based programmable metallization cell (PMC) is a promising alternative to the Ag-chalcogenide glass PMC because of its low power consumption and CMOS-compatibility. Understanding its total ionizing dose (TID) response helps in assessing the reliability of this technology in ionizing radiation environments and benefits its expansion in the space electronics market. In this paper, the impacts of TID on the switching characteristics of Cu-SiO2 PMC are investigated for the first time. The devices were step irradiated with 60Co gamma-rays to a maximum dose of 7.1 Mrad ( SiO2). The results show that gamma-ray irradiation has a negligible impact on the virgin-state and on-state resistance of Cu-SiO2 PMCs. The off-state resistance slightly decreases after the first 1.5 Mrad( SiO2) of exposure, but this reduction saturates after higher levels of TID. Other switching characteristics such as the set voltage, multilevel switching capability and endurance were also studied, all of which did not show observable changes after gamma-ray radiation. The immunity to ionizing radiation is attributed to the suppression of the photo-doping process.

Multifunctional BiFeO{sub 3}/TiO{sub 2} nano-heterostructure: Photo-ferroelectricity, rectifying transport, and nonvolatile resistive switching property

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sarkar, Ayan; Khan, Gobinda Gopal, E-mail: gobinda.gk@gmail.com; Chaudhuri, Arka

Multifunctional BiFeO{sub 3} nanostructure anchored TiO{sub 2} nanotubes are fabricated by coupling wet chemical and electrochemical routes. BiFeO{sub 3}/TiO{sub 2} nano-heterostructure exhibits white-light-induced ferroelectricity at room temperature. Studies reveal that the photogenerated electrons trapped at the domain/grain boundaries tune the ferroelectric polarization in BiFeO{sub 3} nanostructures. The photon controlled saturation and remnant polarization opens up the possibility to design ferroelectric devices based on BiFeO{sub 3.} The nano-heterostructure also exhibits substantial photovoltaic effect and rectifying characteristics. Photovoltaic property is found to be correlated with the ferroelectric polarization. Furthermore, the nonvolatile resistive switching in BiFeO{sub 3}/TiO{sub 2} nano-heterostructure has been studied, whichmore » demonstrates that the observed resistive switching is most likely caused by the electric-field-induced carrier injection/migration and trapping/detrapping process at the hetero-interfaces. Therefore, BiFeO{sub 3}/TiO{sub 2} nano-heterostructure coupled with logic, photovoltaics and memory characteristics holds promises for long-term technological applications in nanoelectronics devices.« less

Silicon and germanium nanowire electronics: physics of conventional and unconventional transistors

NASA Astrophysics Data System (ADS)

Weber, Walter M.; Mikolajick, Thomas

2017-06-01

Research in the field of electronics of 1D group-IV semiconductor structures has attracted increasing attention over the past 15 years. The exceptional combination of the unique 1D electronic transport properties with the mature material know-how of highly integrated silicon and germanium technology holds the promise of enhancing state-of-the-art electronics. In addition of providing conduction channels that can bring conventional field effect transistors to the uttermost scaling limits, the physics of 1D group IV nanowires endows new device principles. Such unconventional silicon and germanium nanowire devices are contenders for beyond complementary metal oxide semiconductor (CMOS) computing by virtue of their distinct switching behavior and higher expressive value. This review conveys to the reader a systematic recapitulation and analysis of the physics of silicon and germanium nanowires and the most relevant CMOS and CMOS-like devices built from silicon and germanium nanowires, including inversion mode, junctionless, steep-slope, quantum well and reconfigurable transistors.

Quantum ballistic transport by interacting two-electron states in quasi-one-dimensional channels

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, Danhong; Center for High Technology Materials, University of New Mexico, 1313 Goddard St SE, Albuquerque, New Mexico 87106; Gumbs, Godfrey

2015-11-15

For quantum ballistic transport of electrons through a short conduction channel, the role of Coulomb interaction may significantly modify the energy levels of two-electron states at low temperatures as the channel becomes wide. In this regime, the Coulomb effect on the two-electron states is calculated and found to lead to four split energy levels, including two anticrossing-level and two crossing-level states. Moreover, due to the interplay of anticrossing and crossing effects, our calculations reveal that the ground two-electron state will switch from one anticrossing state (strong confinement) to a crossing state (intermediate confinement) as the channel width gradually increases andmore » then back to the original anticrossing state (weak confinement) as the channel width becomes larger than a threshold value. This switching behavior leaves a footprint in the ballistic conductance as well as in the diffusion thermoelectric power of electrons. Such a switching is related to the triple spin degeneracy as well as to the Coulomb repulsion in the central region of the channel, which separates two electrons away and pushes them to different channel edges. The conductance reoccurrence region expands from the weak to the intermediate confinement regime with increasing electron density.« less

Design of inductive sensors for tongue control system for computers and assistive devices.

PubMed

Lontis, Eugen R; Struijk, Lotte N S A

2010-07-01

The paper introduces a novel design of air-core inductive sensors in printed circuit board (PCB) technology for a tongue control system. The tongue control system provides a quadriplegic person with a keyboard and a joystick type of mouse for interaction with a computer or for control of an assistive device. Activation of inductive sensors was performed with a cylindrical, soft ferromagnetic material (activation unit). Comparative analysis of inductive sensors in PCB technology with existing hand-made inductive sensors was performed with respect to inductance, resistance, and sensitivity to activation when the activation unit was placed in the center of the sensor. Optimisation of the activation unit was performed in a finite element model. PCBs with air-core inductive sensors were manufactured in a 10 layers, 100 microm and 120 microm line width technology. These sensors provided quality signals that could drive the electronics of the hand-made sensors. Furthermore, changing the geometry of the sensors allowed generation of variable signals correlated with the 2D movement of the activation unit at the sensors' surface. PCB technology for inductive sensors allows flexibility in design, automation of production and ease of possible integration with supplying electronics. The basic switch function of the inductive sensor can be extended to two-dimensional movement detection for pointing devices.

Self-assembled phase-change nanowire for nonvolatile electronic memory

NASA Astrophysics Data System (ADS)

Jung, Yeonwoong

One of the most important subjects in nanosciences is to identify and exploit the relationship between size and structural/physical properties of materials and to explore novel material properties at a small-length scale. Scale-down of materials is not only advantageous in realizing miniaturized devices but nanometer-sized materials often exhibit intriguing physical/chemical properties that greatly differ from their bulk counterparts. This dissertation studies self-assembled phase-change nanowires for future nonvolatile electronic memories, mainly focusing on their size-dependent memory switching properties. Owing to the one-dimensional, unique geometry coupled with the small and tunable sizes, bottom-designed nanowires offer great opportunities in terms for both fundamental science and practical engineering perspectives, which would be difficult to realize in conventional top-down based approaches. We synthesized chalcogenide phase-change nanowires of different compositions and sizes, and studied their electronic memory switching owing to the structural change between crystalline and amorphous phases. In particular, we investigated nanowire size-dependent memory switching parameters, including writing current, power consumption, and data retention times, as well as studying composition-dependent electronic properties. The observed size and composition-dependent switching and recrystallization kinetics are explained based on the heat transport model and heterogeneous nucleation theories, which help to design phase-change materials with better properties. Moreover, we configured unconventional heterostructured phase-change nanowire memories and studied their multiple memory states in single nanowire devices. Finally, by combining in-situ/ex-situ electron microscopy techniques and electrical measurements, we characterized the structural states involved in electrically-driven phase-change in order to understand the atomistic mechanism that governs the electronic memory switching through phase-change.

High-performance, scalable optical network-on-chip architectures

NASA Astrophysics Data System (ADS)

Tan, Xianfang

The rapid advance of technology enables a large number of processing cores to be integrated into a single chip which is called a Chip Multiprocessor (CMP) or a Multiprocessor System-on-Chip (MPSoC) design. The on-chip interconnection network, which is the communication infrastructure for these processing cores, plays a central role in a many-core system. With the continuously increasing complexity of many-core systems, traditional metallic wired electronic networks-on-chip (NoC) became a bottleneck because of the unbearable latency in data transmission and extremely high energy consumption on chip. Optical networks-on-chip (ONoC) has been proposed as a promising alternative paradigm for electronic NoC with the benefits of optical signaling communication such as extremely high bandwidth, negligible latency, and low power consumption. This dissertation focus on the design of high-performance and scalable ONoC architectures and the contributions are highlighted as follow: 1. A micro-ring resonator (MRR)-based Generic Wavelength-routed Optical Router (GWOR) is proposed. A method for developing any sized GWOR is introduced. GWOR is a scalable non-blocking ONoC architecture with simple structure, low cost and high power efficiency compared to existing ONoC designs. 2. To expand the bandwidth and improve the fault tolerance of the GWOR, a redundant GWOR architecture is designed by cascading different type of GWORs into one network. 3. The redundant GWOR built with MRR-based comb switches is proposed. Comb switches can expand the bandwidth while keep the topology of GWOR unchanged by replacing the general MRRs with comb switches. 4. A butterfly fat tree (BFT)-based hybrid optoelectronic NoC (HONoC) architecture is developed in which GWORs are used for global communication and electronic routers are used for local communication. The proposed HONoC uses less numbers of electronic routers and links than its counterpart of electronic BFT-based NoC. It takes the advantages of GWOR in optical communication and BFT in non-uniform traffic communication and three-dimension (3D) implementation. 5. A cycle-accurate NoC simulator is developed to evaluate the performance of proposed HONoC architectures. It is a comprehensive platform that can simulate both electronic and optical NoCs. Different size HONoC architectures are evaluated in terms of throughput, latency and energy dissipation. Simulation results confirm that HONoC achieves good network performance with lower power consumption.

Terahertz optoelectronics with surface plasmon polariton diode.

PubMed

Vinnakota, Raj K; Genov, Dentcho A

2014-05-09

The field of plasmonics has experience a renaissance in recent years by providing a large variety of new physical effects and applications. Surface plasmon polaritons, i.e. the collective electron oscillations at the interface of a metal/semiconductor and a dielectric, may bridge the gap between electronic and photonic devices, provided a fast switching mechanism is identified. Here, we demonstrate a surface plasmon-polariton diode (SPPD) an optoelectronic switch that can operate at exceedingly large signal modulation rates. The SPPD uses heavily doped p-n junction where surface plasmon polaritons propagate at the interface between n and p-type GaAs and can be switched by an external voltage. The devices can operate at transmission modulation higher than 98% and depending on the doping and applied voltage can achieve switching rates of up to 1 THz. The proposed switch is compatible with the current semiconductor fabrication techniques and could lead to nanoscale semiconductor-based optoelectronics.

Transient effects in beam-plasma interactions in a space simulation chamber stimulated by a fast pulse electron gun

NASA Technical Reports Server (NTRS)

Raitt, W. J.; Banks, P. M.; Denig, W. F.; Anderson, H. R.

1982-01-01

Interest in the interaction of electron beams with plasma generated by ionization caused by the primary electron beam was stimulated by the need to develop special vacuum tubes to operate in the kMHz frequency region. The experiments of Getty and Smullin (1963) indicated that the interaction of an energetic electron beam with its self-produced plasma resulted in the emission of wave energy over a wide range of frequencies associated with cyclotron and longitudinal plasma instabilities. This enhanced the thermal plasma density in the vicinity of the beam, and the term Beam-Plasma Discharge (BPD) was employed to described this phenomenon. The present investigation is concerned with some of the transient phenomena associated with wave emission during the beam switch-on and switch-off periods. Results are presented on the changes in electron energy spectra on a time scale of tens of milliseconds following beam switch-on. The results are discussed in terms of the beam plasma discharge phenomenon.

Electron holography on HfO2/HfO2-x bilayer structures with multilevel resistive switching properties

NASA Astrophysics Data System (ADS)

Niu, G.; Schubert, M. A.; Sharath, S. U.; Zaumseil, P.; Vogel, S.; Wenger, C.; Hildebrandt, E.; Bhupathi, S.; Perez, E.; Alff, L.; Lehmann, M.; Schroeder, T.; Niermann, T.

2017-05-01

Unveiling the physical nature of the oxygen-deficient conductive filaments (CFs) that are responsible for the resistive switching of the HfO2-based resistive random access memory (RRAM) devices represents a challenging task due to the oxygen vacancy related defect nature and nanometer size of the CFs. As a first important step to this goal, we demonstrate in this work direct visualization and a study of physico-chemical properties of oxygen-deficient amorphous HfO2-x by carrying out transmission electron microscopy electron holography as well as energy dispersive x-ray spectroscopy on HfO2/HfO2-x bilayer heterostructures, which are realized by reactive molecular beam epitaxy. Furthermore, compared to single layer devices, Pt/HfO2/HfO2-x /TiN bilayer devices show enhanced resistive switching characteristics with multilevel behavior, indicating their potential as electronic synapses in future neuromorphic computing applications.

Manipulating Ferroelectrics through Changes in Surface and Interface Properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Balke, Nina; Ramesh, Ramamoorthy; Yu, Pu

Ferroelectric materials are used in many applications of modern technologies including information storage, transducers, sensors, tunable capacitors, and other novel device concepts. In many of these applications, the ferroelectric properties, such as switching voltages, piezoelectric constants, or stability of nanodomains, are crucial. For any application, even for material characterization, the material itself needs to be interfaced with electrodes. On the basis of the structural, chemical, and electronic properties of the interfaces, the measured material properties can be determined by the interface. This is also true for surfaces. However, the importance of interfaces and surfaces and their effect on experiments aremore » often neglected, which results in many dramatically different experimental results for nominally identical samples. Therefore, it is crucial to understand the role of the interface and surface properties on internal bias fields and the domain switching process. Here, the nanoscale ferroelectric switching process and the stability of nanodomains for Pb(Zr,Ti)O 3 thin films are investigated by using scanning probe microscopy. Interface and surface properties are modulated through the selection/redesign of electrode materials as well as tuning the surface-near oxygen vacancies, which both can result in changes of the electric fields acting across the sample, and consequently this controls the measured ferroelectric and domain retention properties. By understanding the role of surfaces and interfaces, ferroelectric properties can be tuned to eliminate the problem of asymmetric domain stability by combining the effects of different electrode materials. Lastly, this study forms an important step toward integrating ferroelectric materials in electronic devices.« less

Manipulating Ferroelectrics through Changes in Surface and Interface Properties

DOE PAGES

Balke, Nina; Ramesh, Ramamoorthy; Yu, Pu

2017-10-23

Ferroelectric materials are used in many applications of modern technologies including information storage, transducers, sensors, tunable capacitors, and other novel device concepts. In many of these applications, the ferroelectric properties, such as switching voltages, piezoelectric constants, or stability of nanodomains, are crucial. For any application, even for material characterization, the material itself needs to be interfaced with electrodes. On the basis of the structural, chemical, and electronic properties of the interfaces, the measured material properties can be determined by the interface. This is also true for surfaces. However, the importance of interfaces and surfaces and their effect on experiments aremore » often neglected, which results in many dramatically different experimental results for nominally identical samples. Therefore, it is crucial to understand the role of the interface and surface properties on internal bias fields and the domain switching process. Here, the nanoscale ferroelectric switching process and the stability of nanodomains for Pb(Zr,Ti)O 3 thin films are investigated by using scanning probe microscopy. Interface and surface properties are modulated through the selection/redesign of electrode materials as well as tuning the surface-near oxygen vacancies, which both can result in changes of the electric fields acting across the sample, and consequently this controls the measured ferroelectric and domain retention properties. By understanding the role of surfaces and interfaces, ferroelectric properties can be tuned to eliminate the problem of asymmetric domain stability by combining the effects of different electrode materials. Lastly, this study forms an important step toward integrating ferroelectric materials in electronic devices.« less

Three-dimensional resistivity and switching between correlated electronic states in 1T-TaS2

NASA Astrophysics Data System (ADS)

Svetin, Damjan; Vaskivskyi, Igor; Brazovskii, Serguei; Mihailovic, Dragan

2017-04-01

Recent demonstrations of controlled switching between different ordered macroscopic states by impulsive electromagnetic perturbations in complex materials have opened some fundamental questions on the mechanisms responsible for such remarkable behavior. Here we experimentally address the question of whether two-dimensional (2D) Mott physics can be responsible for unusual switching between states of different electronic order in the layered dichalcogenide 1T-TaS2, or it is a result of subtle inter-layer “orbitronic” re-ordering of its stacking structure. We report on in-plane (IP) and out-of-plane (OP) resistance switching by current-pulse injection at low temperatures. Elucidating the controversial theoretical predictions, we also report on measurements of the anisotropy of the electrical resistivity below room temperature. From the T-dependence of ρ⊥ and ρ||, we surmise that the resistivity is more consistent with collective motion than single particle diffusive or band-like transport. The relaxation dynamics of the metastable state for both IP and OP electron transport are seemingly governed by the same mesoscopic quantum re-ordering process. We conclude that 1T-TaS2 shows resistance switching arising from an interplay of both IP and OP correlations.

Solvation and Evolution Dynamics of an Excess Electron in Supercritical CO2

NASA Astrophysics Data System (ADS)

Wang, Zhiping; Liu, Jinxiang; Zhang, Meng; Cukier, Robert I.; Bu, Yuxiang

2012-05-01

We present an ab initio molecular dynamics simulation of the dynamics of an excess electron solvated in supercritical CO2. The excess electron can exist in three types of states: CO2-core localized, dual-core localized, and diffuse states. All these states undergo continuous state conversions via a combination of long lasting breathing oscillations and core switching, as also characterized by highly cooperative oscillations of the excess electron volume and vertical detachment energy. All of these oscillations exhibit a strong correlation with the electron-impacted bending vibration of the core CO2, and the core-switching is controlled by thermal fluctuations.

Proceedings of the first switch tube advanced technology meeting held at EG G, Salem, Massachusetts, May 23, 1990

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shuman, A.; Beavis, L.

Early in 1990, J. A. Wilder, Supervisor of Sandia National Laboratories (SNLA), Division 2565 requested that a meeting of the scientists and engineers responsible for developing and producing switch tubes be set up to discuss in a semi-formal way the science and technology of switch tubes. Programmatic and administrative issues were specifically exempted from the discussions. L. Beavis, Division 7471, SNL and A. Shuman, EG G, Salem were made responsible for organizing a program including the materials and processes of switch tubes. The purpose of the Switch Tube Advanced Technology meeting was to allow personnel from Allied Signal Kansas Citymore » Division (AS/KCD); EG G, Salem and Sandia National Laboratories (SNL) to discuss a variety of issues involved in the development and production of switch tubes. It was intended that the formal and informal discussions would allow a better understanding of the production problems by material and process engineers and of the materials and processes by production engineers. This program consisted of formal presentations on May 23 and informal discussions on May 24. The topics chosen for formal presentation were suggested by the people of AS/KCD, EG G, Salem, and SNL involved with the design, development and production of switch tubes. The topics selected were generic. They were not directed to any specific switch tube but rather to all switch tubes in production and development. This document includes summaries of the material presented at the formal presentation on May 23.« less

Single-Pole Double-Throw MMIC Switches for a Microwave Radiometer

NASA Technical Reports Server (NTRS)

Montes, Oliver; Dawson, Douglas E.; Kangaslahti, Pekka P.

2012-01-01

In order to reduce the effect of gain and noise instabilities in the RF chain of a microwave radiometer, a Dicke radiometer topology is often used, as in the case of the proposed surface water and ocean topography (SWOT) radiometer instrument. For this topology, a single-pole double-throw (SPDT) microwave switch is needed, which must have low insertion loss at the radiometer channel frequencies to minimize the overall receiver noise figure. Total power radiometers are limited in accuracy due to the continuous variation in gain of the receiver. High-frequency SPDT switches were developed in the form of monolithic microwave integrated circuits (MMICs) using 75 micron indium phosphide (InP) PIN-diode technology. These switches can be easily integrated into Dicke switched radiometers that utilize microstrip technology.

Atomic Layer Deposited Oxide-Based Nanocomposite Structures with Embedded CoPtx Nanocrystals for Resistive Random Access Memory Applications.

PubMed

Wang, Lai-Guo; Cao, Zheng-Yi; Qian, Xu; Zhu, Lin; Cui, Da-Peng; Li, Ai-Dong; Wu, Di

2017-02-22

Al 2 O 3 - or HfO 2 -based nanocomposite structures with embedded CoPt x nanocrystals (NCs) on TiN-coated Si substrates have been prepared by combination of thermal atomic layer deposition (ALD) and plasma-enhanced ALD for resistive random access memory (RRAM) applications. The impact of CoPt x NCs and their average size/density on the resistive switching properties has been explored. Compared to the control sample without CoPt x NCs, ALD-derived Pt/oxide/100 cycle-CoPt x NCs/TiN/SiO 2 /Si exhibits a typical bipolar, reliable, and reproducible resistive switching behavior, such as sharp distribution of RRAM parameters, smaller set/reset voltages, stable resistance ratio (≥10 2 ) of OFF/ON states, better switching endurance up to 10 4 cycles, and longer data retention over 10 5 s. The possible resistive switching mechanism based on nanocomposite structures of oxide/CoPt x NCs has been proposed. The dominant conduction mechanisms in low- and high-resistance states of oxide-based device units with embedded CoPt x NCs are Ohmic behavior and space-charge-limited current, respectively. The insertion of CoPt x NCs can effectively improve the formation of conducting filaments due to the CoPt x NC-enhanced electric field intensity. Besides excellent resistive switching performances, the nanocomposite structures also simultaneously present ferromagnetic property. This work provides a flexible pathway by combining PEALD and TALD compatible with state-of-the-art Si-based technology for multifunctional electronic devices applications containing RRAM.

Simple Motor Control Concept Results High Efficiency at High Velocities

NASA Astrophysics Data System (ADS)

Starin, Scott; Engel, Chris

2013-09-01

The need for high velocity motors in space applications for reaction wheels and detectors has stressed the limits of Brushless Permanent Magnet Motors (BPMM). Due to inherent hysteresis core losses, conventional BPMMs try to balance the need for torque verses hysteresis losses. Cong-less motors have significantly less hysteresis losses but suffer from lower efficiencies. Additionally, the inherent low inductance in cog-less motors result in high ripple currents or high switching frequencies, which lowers overall efficiency and increases performance demands on the control electronics.However, using a somewhat forgotten but fully qualified technology of Isotropic Magnet Motors (IMM), extremely high velocities may be achieved at low power input using conventional drive electronics. This paper will discuss the trade study efforts and empirical test data on a 34,000 RPM IMM.

A single electron nanomechanical Y-switch.

PubMed

Kim, Chulki; Kim, Hyun-Seok; Prada, Marta; Blick, Robert H

2014-08-07

We demonstrate current switching in the frequency domain using a nanomechanical shuttle with three terminals operating at room temperature. The shuttle consists of a metallic island on top of a Si nanopillar forming the Y-junction. A flexural mode of the nanopillar is excited by applying an external bias to one of the contacts, allowing electrons to be shuttled across the oscillating island.

67. Building 102, view of electronic switching amplifier (in retracted ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

67. Building 102, view of electronic switching amplifier (in retracted or open position) with video monitor mounted at top to monitor performance and condition of system in oil bath. - Clear Air Force Station, Ballistic Missile Early Warning System Site II, One mile west of mile marker 293.5 on Parks Highway, 5 miles southwest of Anderson, Anderson, Denali Borough, AK

Performance, operational limits, of an Electronic Switching Spherical Array (ESSA) antenna

NASA Technical Reports Server (NTRS)

Stockton, R.

1979-01-01

The development of a microprocessor controller which provides multimode operational capability for the Electronic Switching Spherical Array (ESSA) Antenna is described. The best set of operating conditions were determined and the performance of an ESSA antenna was demonstrated in the following modes: (1) omni; (2) acquisition/track; (3) directive; and (4) multibeam. The control algorithms, software flow diagrams, and electronic circuitry were developed. The microprocessor and control electronics were built and interfaced with the antenna to carry out performance testing. The acquisition/track mode for users in the Tracking and Data Relay Satellite System is emphasized.

The modeling of an automotive electronic control system and the application of optimizing methods

NASA Astrophysics Data System (ADS)

Zhang, Yansheng; Yang, Zhigang; Zhang, Xiang

2005-12-01

Now, MATLAB/SIMULINK software is popularly used by automotive electronic control designers to develop automotive electronic control systems and perform numerical simulations. But they will face problems, such as value initialization in the "integrator" block, conversion among different data types, selection of "if" block and "switch" block, realization of the "if-clause" under multiple options and the auto-switching control, etc. Taking as an example the designing of an Automated Mechanical Transmission (AMT) system, this paper discusses some techniques and methods for modeling the automotive electronic control system with MATLAB/SIMULINK, offering designers some successful examples.

Asynchronous Transfer Mode (ATM) Switch Technology and Vendor Survey

NASA Technical Reports Server (NTRS)

Berry, Noemi

1995-01-01

Asynchronous Transfer Mode (ATM) switch and software features are described and compared in order to make switch comparisons meaningful. An ATM switch's performance cannot be measured solely based on its claimed switching capacity; traffic management and congestion control are emerging as the determining factors in an ATM network's ultimate throughput. Non-switch ATM products and experiences with actual installations of ATM networks are described. A compilation of select vendor offerings as of October 1994 is provided in chart form.

Magnetically Delayed Low-Pressure Gas Discharge Switching

DTIC Science & Technology

1993-06-01

the gap, minimizes this effect. It is this version of the low- pressure switch that we are presently studying. Our magnetically delayed low... pressure switch (MDLPS) test-stand was built primarily to support the long-pulse, relativistic klystron (RK) and free electron laser (FEL) work at... pressure switch and compared the performance with and without the saturable inductor. A comparison of typi- cal closure properties is shown in Fig

Conversion of Radio-Frequency Pulses to Continuous-Wave Sinusoids by Fast Switching and Narrowband Filtering

DTIC Science & Technology

2016-09-01

Switching and Narrowband Filtering by Gregory J Mazzaro, Andrew J Sherbondy, Kenneth I Ranney, and Kelly D Sherbondy...Switching and Narrowband Filtering by Gregory J Mazzaro, Andrew J Sherbondy, Kenneth I Ranney, and Kelly D Sherbondy Sensors and Electron Devices...08/2016 4. TITLE AND SUBTITLE Conversion of Radio-Frequency Pulses to Continuous-Wave Sinusoids by Fast Switching and Narrowband Filtering 5a

Recent Advances in Photonic Devices for Optical Computing and the Role of Nonlinear Optics-Part II

NASA Technical Reports Server (NTRS)

Abdeldayem, Hossin; Frazier, Donald O.; Witherow, William K.; Banks, Curtis E.; Paley, Mark S.

2007-01-01

The twentieth century has been the era of semiconductor materials and electronic technology while this millennium is expected to be the age of photonic materials and all-optical technology. Optical technology has led to countless optical devices that have become indispensable in our daily lives in storage area networks, parallel processing, optical switches, all-optical data networks, holographic storage devices, and biometric devices at airports. This chapters intends to bring some awareness to the state-of-the-art of optical technologies, which have potential for optical computing and demonstrate the role of nonlinear optics in many of these components. Our intent, in this Chapter, is to present an overview of the current status of optical computing, and a brief evaluation of the recent advances and performance of the following key components necessary to build an optical computing system: all-optical logic gates, adders, optical processors, optical storage, holographic storage, optical interconnects, spatial light modulators and optical materials.

Bilayer avalanche spin-diode logic

DOE Office of Scientific and Technical Information (OSTI.GOV)

Friedman, Joseph S., E-mail: joseph.friedman@u-psud.fr; Querlioz, Damien; Fadel, Eric R.

2015-11-15

A novel spintronic computing paradigm is proposed and analyzed in which InSb p-n bilayer avalanche spin-diodes are cascaded to efficiently perform complex logic operations. This spin-diode logic family uses control wires to generate magnetic fields that modulate the resistance of the spin-diodes, and currents through these devices control the resistance of cascaded devices. Electromagnetic simulations are performed to demonstrate the cascading mechanism, and guidelines are provided for the development of this innovative computing technology. This cascading scheme permits compact logic circuits with switching speeds determined by electromagnetic wave propagation rather than electron motion, enabling high-performance spintronic computing.

Optimal all-optical switching of a microcavity resonance in the telecom range using the electronic Kerr effect.

PubMed

Yüce, Emre; Ctistis, Georgios; Claudon, Julien; Gérard, Jean-Michel; Vos, Willem L

2016-01-11

We have switched GaAs/AlAs and AlGaAs/AlAs planar microcavities that operate in the "Original" (O) telecom band by exploiting the instantaneous electronic Kerr effect. We observe that the resonance frequency reversibly shifts within one picosecond when the nanostructure is pumped with low-energy photons. We investigate experimentally and theoretically the role of several parameters: the material backbone and its electronic bandgap, the quality factor, and the duration of the switch pulse. The magnitude of the frequency shift is reduced when the backbone of the central λ-layer has a greater electronic bandgap compared to the cavity resonance frequency and the frequency of the pump. This observation is caused by the fact that pumping with photon energies near the bandgap resonantly enhances the switched magnitude. We thus find that cavities operating in the telecom O-band are more amenable to ultrafast Kerr switching than those operating at lower frequencies, such as the C-band. Our results indicate that the large bandgap of AlGaAs/AlAs cavity allows to tune both the pump and the probe to the telecom range to perform Kerr switching without detrimental two-photon absorption. We observe that the magnitude of the resonance frequency shift decreases with increasing quality factor of the cavity. Our model shows that the magnitude of the resonance frequency shift depends on the pump pulse duration and is maximized when the duration matches the cavity storage time to within a factor two. In our experiments, we obtain a maximum shift of the cavity resonance relative to the cavity linewidth of 20%. We project that the shift of the cavity resonance can be increased twofold with a pump pulse duration that better matches the cavity storage time. We provide the essential parameter settings for different materials so that the frequency shift of the cavity resonance can be maximized using the electronic Kerr effect.

Electronic logic to enhance switch reliability in detecting openings and closures of redundant switches

DOEpatents

Cooper, James A.

1986-01-01

A logic circuit is used to enhance redundant switch reliability. Two or more switches are monitored for logical high or low output. The output for the logic circuit produces a redundant and failsafe representation of the switch outputs. When both switch outputs are high, the output is high. Similarly, when both switch outputs are low, the logic circuit's output is low. When the output states of the two switches do not agree, the circuit resolves the conflict by memorizing the last output state which both switches were simultaneously in and produces the logical complement of this output state. Thus, the logic circuit of the present invention allows the redundant switches to be treated as if they were in parallel when the switches are open and as if they were in series when the switches are closed. A failsafe system having maximum reliability is thereby produced.

Nanocrystalline ZnON; High mobility and low band gap semiconductor material for high performance switch transistor and image sensor application

PubMed Central

Lee, Eunha; Benayad, Anass; Shin, Taeho; Lee, HyungIk; Ko, Dong-Su; Kim, Tae Sang; Son, Kyoung Seok; Ryu, Myungkwan; Jeon, Sanghun; Park, Gyeong-Su

2014-01-01

Interest in oxide semiconductors stems from benefits, primarily their ease of process, relatively high mobility (0.3–10 cm2/vs), and wide-bandgap. However, for practical future electronic devices, the channel mobility should be further increased over 50 cm2/vs and wide-bandgap is not suitable for photo/image sensor applications. The incorporation of nitrogen into ZnO semiconductor can be tailored to increase channel mobility, enhance the optical absorption for whole visible light and form uniform micro-structure, satisfying the desirable attributes essential for high performance transistor and visible light photo-sensors on large area platform. Here, we present electronic, optical and microstructural properties of ZnON, a composite of Zn3N2 and ZnO. Well-optimized ZnON material presents high mobility exceeding 100 cm2V−1s−1, the band-gap of 1.3 eV and nanocrystalline structure with multiphase. We found that mobility, microstructure, electronic structure, band-gap and trap properties of ZnON are varied with nitrogen concentration in ZnO. Accordingly, the performance of ZnON-based device can be adjustable to meet the requisite of both switch device and image-sensor potentials. These results demonstrate how device and material attributes of ZnON can be optimized for new device strategies in display technology and we expect the ZnON will be applicable to a wide range of imaging/display devices. PMID:24824778

High power RF coaxial switch

NASA Technical Reports Server (NTRS)

Caro, E. R. (Inventor)

1980-01-01

A coaxial switch capable of operating in a vacuum with high RF power in the 1.2 GHz range without multipactor breakdown, and without relying on pressurization with an inert gas is described. The RF carrying conductors of the switch are surrounded with a high grade solid dielectric, thus eliminating any gaps in which electrons can accelerate.

Design strategy for photoinduced electron transfer-based small-molecule fluorescent probes of biomacromolecules.

PubMed

Zhang, Wei; Ma, Zhao; Du, Lupei; Li, Minyong

2014-06-07

As the cardinal support of innumerable biological processes, biomacromolecules such as proteins, nucleic acids and polysaccharides are of importance to living systems. The key to understanding biological processes is to realize the role of these biomacromolecules in thte localization, distribution, conformation and interaction with other molecules. With the current development and adaptation of fluorescent technologies in biomedical and pharmaceutical fields, the fluorescence imaging (FLI) approach of using small-molecule fluorescent probes is becoming an up-to-the-minute method for the detection and monitoring of these imperative biomolecules in life sciences. However, conventional small-molecule fluorescent probes may provide undesirable results because of their intrinsic deficiencies such as low signal-to-noise ratio (SNR) and false-positive errors. Recently, small-molecule fluorescent probes with a photoinduced electron transfer (PET) "on/off" switch for biomacromolecules have been thoroughly considered. When recognized by the biomacromolecules, these probes turn on/off the PET switch and change the fluorescence intensity to present a high SNR result. It should be emphasized that these PET-based fluorescent probes could be advantageous for understanding the pathogenesis of various diseases caused by abnormal expression of biomacromolecules. The discussion of this successful strategy involved in this review will be a valuable guide for the further development of new PET-based small-molecule fluorescent probes for biomacromolecules.

Power Supply Fault Tolerant Reliability Study

DTIC Science & Technology

1991-04-01

easier to design than for equivalent bipolar transistors. MCDONNELL DOUGLAS ELECTRONICS SYSTEMS COMPANY 9. Base circuitry should be designed to drive...SWITCHING REGULATORS (Ref. 28), SWITCHING AND LINEAR POWER SUPPLY DESIGN (Ref. 25) 6. Sequence the turn-off/turn-on logic in an orderly and controllable ...for equivalent bipolar transistors. MCDONNELL DOUGLAS ELECTRONICS SYSTEMS COMPANY 8. Base circuitry should be designed to drive the transistor into

Improvement of multiprocessing performance by using optical centralized shared bus

NASA Astrophysics Data System (ADS)

Han, Xuliang; Chen, Ray T.

2004-06-01

With the ever-increasing need to solve larger and more complex problems, multiprocessing is attracting more and more research efforts. One of the challenges facing the multiprocessor designers is to fulfill in an effective manner the communications among the processes running in parallel on multiple multiprocessors. The conventional electrical backplane bus provides narrow bandwidth as restricted by the physical limitations of electrical interconnects. In the electrical domain, in order to operate at high frequency, the backplane topology has been changed from the simple shared bus to the complicated switched medium. However, the switched medium is an indirect network. It cannot support multicast/broadcast as effectively as the shared bus. Besides the additional latency of going through the intermediate switching nodes, signal routing introduces substantial delay and considerable system complexity. Alternatively, optics has been well known for its interconnect capability. Therefore, it has become imperative to investigate how to improve multiprocessing performance by utilizing optical interconnects. From the implementation standpoint, the existing optical technologies still cannot fulfill the intelligent functions that a switch fabric should provide as effectively as their electronic counterparts. Thus, an innovative optical technology that can provide sufficient bandwidth capacity, while at the same time, retaining the essential merits of the shared bus topology, is highly desirable for the multiprocessing performance improvement. In this paper, the optical centralized shared bus is proposed for use in the multiprocessing systems. This novel optical interconnect architecture not only utilizes the beneficial characteristics of optics, but also retains the desirable properties of the shared bus topology. Meanwhile, from the architecture standpoint, it fits well in the centralized shared-memory multiprocessing scheme. Therefore, a smooth migration with substantial multiprocessing performance improvement is expected. To prove the technical feasibility from the architecture standpoint, a conceptual emulation of the centralized shared-memory multiprocessing scheme is demonstrated on a generic PCI subsystem with an optical centralized shared bus.

Energy Switching Threshold for Climatic Benefits

NASA Astrophysics Data System (ADS)

Zhang, X.; Cao, L.; Caldeira, K.

2013-12-01

Climate change is one of the great challenges facing humanity currently and in the future. Its most severe impacts may still be avoided if efforts are made to transform current energy systems (1). A transition from the global system of high Greenhouse Gas (GHG) emission electricity generation to low GHG emission energy technologies is required to mitigate climate change (2). Natural gas is increasingly seen as a choice for transitions to renewable sources. However, recent researches in energy and climate puzzled about the climate implications of relying more energy on natural gas. On one hand, a shift to natural gas is promoted as climate mitigation because it has lower carbon per unit energy than coal (3). On the other hand, the effect of switching to natural gas on nuclear-power and other renewable energies development may offset benefits from fuel-switching (4). Cheap natural gas is causing both coal plants and nuclear plants to close in the US. The objective of this study is to measure and evaluate the threshold of energy switching for climatic benefits. We hypothesized that the threshold ratio of energy switching for climatic benefits is related to GHGs emission factors of energy technologies, but the relation is not linear. A model was developed to study the fuel switching threshold for greenhouse gas emission reduction, and transition from coal and nuclear electricity generation to natural gas electricity generation was analyzed as a case study. The results showed that: (i) the threshold ratio of multi-energy switching for climatic benefits changes with GHGs emission factors of energy technologies. (ii)The mathematical relation between the threshold ratio of energy switching and GHGs emission factors of energies is a curved surface function. (iii) The analysis of energy switching threshold for climatic benefits can be used for energy and climate policy decision support.

Development of a microwave 20 x 20 switch matrix for 30/20 GHz SS-TDMA application

NASA Technical Reports Server (NTRS)

Cory, B. J.; Berkowitz, M.; Wallis, R.; Schiavone, A.; Shieh, D.; Campbell, J.

1982-01-01

The design and fabrication of a 3-8 GHz, 20 x 20 Satellite Switched-Time Division Multiple Access IF switch matrix applicable to a 30/20 GHz communications satellite are described. An assessment of switch architecture in 1980 concluded that the GaAs FET-based coupled crossbar switch matrix, incorporating high speed CMOS LSI logic for switch crosspoint addressing, would be the optimum technology available for communications satellite switching by 1982. This assessment was based on such factors as switching speed, bandwidth, off-state isolation, and reliability, over a 10-year mission life. A proof-of-concept model's construction and testing are presented.

Research and embedded implementation of Layer 3 switch

NASA Astrophysics Data System (ADS)

Song, Jin; Cheng, Zijing

2009-12-01

In the internetworking world, switches and routers have been deployed for workgroup and enterprise connectivity. In the past, switches mainly operated at Layer 2 (they were extensions of bridges), while routers were clearly Layer3 devices. Recently, the line has blurred and switches operating at Layer 3 are becoming more popular. This paper explains the Linux Bridge, Layer 2 Switches, Virtual LAN (VLAN) and Layer 3 Switches. The flow chart of Layer 3 switches and working routine related to Layer 3 switch technology were investigated in detail. This paper presents a new method to implement layer 3 switching that is entirely accomplished in software and is embedded implemented by code transplanting based on PowerPC 460GT platform.

Experimental investigation on the effect of plasma jet in the triggered discharge process of a gas switch

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tie, W., E-mail: twh.110.666@163.com, E-mail: 84470220@qq.com; Xi'an Jiaotong University, Xi'an 710049; Liu, S.

The temporal and spatial evolution of a plasma jet generated by a spark discharge was observed. The electron temperature and density were obtained under different time and gas pressures by optical emission spectroscopy. Moreover, the discharge process of the plasma-jet triggered gas switch was recorded and analyzed at the lowest working coefficient. The results showed that the plasma jet moved forward in a bullet mode, and the advancing velocity increased with the decrease of pressure, and decreased with time growing. At initial time, the maximum velocity of a plasma jet could reach 3.68 × 10{sup 6 }cm/s. The electron temperature decreased from 2.0 eVmore » to 1.3 eV, and the electron density increased from 3.1 × 10{sup 15}/cm{sup 3} to 6.3 × 10{sup 15}/cm{sup 3} at the initial moment as the gas pressure increases from 0.1 MPa to 0.32 MPa. For a two-gap gas switch, the discharge performances were more depended on the second discharge spark gap (gap 2). Because plasma jet promoted the discharge in Gap 2, the gas switch operating in mode II had better triggered discharge characteristics. In the discharge process, the plasma-jet triggering had the effect of non-penetrating inducing, which not only provided initial electrons for reducing statistical lag but also enhanced the local electric field. The discharge was initiated and accelerated from electron avalanche to streamer. Therefore, a fast discharge was occurred in the gas switch.« less

Deep Space Systems Technology Program Future Deliveries

NASA Technical Reports Server (NTRS)

Salvo, Christopher G.; Keuneke, Matthew S.

2000-01-01

NASA is in a period of frequent launches of low cost deep space missions with challenging performance needs. The modest budgets of these missions make it impossible for each to develop its own technology, therefore, efficient and effective development and insertion of technology for these missions must be approached at a higher level than has been done in the past. The Deep Space Systems Technology Program (DSST), often referred to as X2000, has been formed to address this need. The program is divided into a series of "Deliveries" that develop and demonstrate a set of spacecraft system capabilities with broad applicability for use by multiple missions. The First Delivery Project, to be completed in 2001, will provide a one MRAD-tolerant flight computer, power switching electronics, efficient radioisotope power source, and a transponder with services at 8.4 GHz and 32 GHz bands. Plans call for a Second Delivery in late 2003 to enable complete deep space systems in the 10 to 50 kg class, and a Third Delivery built around Systems on a Chip (extreme levels of electronic and microsystems integration) around 2006. Formulation of Future Deliveries (past the First Delivery) is ongoing and includes plans for such developments as highly miniaturized digital/analog/power electronics, optical communications, multifunctional structures, miniature lightweight propulsion, advanced thermal control techniques, highly efficient radioisotope power sources, and a unified flight ground software architecture to support the needs of future highly intelligent space systems. All developments are targeted at broad applicability and reuse, and will be commercialized within the US.

Electronic logic for enhanced switch reliability

DOEpatents

Cooper, J.A.

1984-01-20

A logic circuit is used to enhance redundant switch reliability. Two or more switches are monitored for logical high or low output. The output for the logic circuit produces a redundant and fail-safe representation of the switch outputs. When both switch outputs are high, the output is high. Similarly, when both switch outputs are low, the logic circuit's output is low. When the output states of the two switches do not agree, the circuit resolves the conflict by memorizing the last output state which both switches were simultaneously in and produces the logical complement of this output state. Thus, the logic circuit of the present invention allows the redundant switches to be treated as if they were in parallel when the switches are open and as if they were in series when the switches are closed. A failsafe system having maximum reliability is thereby produced.

Spin transport and spin torque in antiferromagnetic devices

DOE PAGES

Zelezny, J.; Wadley, P.; Olejnik, K.; ...

2018-03-02

Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets which represent the more common form of magnetically ordered materials, have found less practical application beyond their use for establishing reference magnetic orientations via exchange bias. This might change in the future due to the recent progress in materials research and discoveries of antiferromagnetic spintronic phenomena suitable for device applications. Experimental demonstration of the electrical switching and detection of the Néel order open a route towards memory devices based on antiferromagnets. Apart from the radiation and magnetic-field hardness, memory cells fabricated from antiferromagnets can be inherently multilevel, whichmore » could be used for neuromorphic computing. Switching speeds attainable in antiferromagnets far exceed those of ferromagnetic and semiconductor memory technologies. Here we review the recent progress in electronic spin-transport and spin-torque phenomena in antiferromagnets that are dominantly of the relativistic quantum mechanical origin. We discuss their utility in pure antiferromagnetic or hybrid ferromagnetic/antiferromagnetic memory devices.« less

Spin transport and spin torque in antiferromagnetic devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zelezny, J.; Wadley, P.; Olejnik, K.

Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets which represent the more common form of magnetically ordered materials, have found less practical application beyond their use for establishing reference magnetic orientations via exchange bias. This might change in the future due to the recent progress in materials research and discoveries of antiferromagnetic spintronic phenomena suitable for device applications. Experimental demonstration of the electrical switching and detection of the Néel order open a route towards memory devices based on antiferromagnets. Apart from the radiation and magnetic-field hardness, memory cells fabricated from antiferromagnets can be inherently multilevel, whichmore » could be used for neuromorphic computing. Switching speeds attainable in antiferromagnets far exceed those of ferromagnetic and semiconductor memory technologies. Here we review the recent progress in electronic spin-transport and spin-torque phenomena in antiferromagnets that are dominantly of the relativistic quantum mechanical origin. We discuss their utility in pure antiferromagnetic or hybrid ferromagnetic/antiferromagnetic memory devices.« less

ROADMs for reconfigurable metro networks

NASA Astrophysics Data System (ADS)

Homa, Jonathan; Bala, Krishna

2009-01-01

Reconfigurable Optical Add-Drop Multiplexers (ROADMs) are the key nodal sub-systems that are used to implement modern DWDM networks. They provide network flexibility by switching wavelengths among fibers under software control without expensive conversion to the electronic domain. They speed up provisioning time, reduce operational costs and eliminate human errors. Two general types of ROADMs are used in Metro optical networks, two-degree and multi-degree, where the degree refers to the numbers of DWDM fibers entering and exiting the ROADM node. A twodegree ROADM is like a location on a highway with off and on ramps to drop off and accept local traffic while a multidegree ROADM is like an interchange where highways meet and is used for interconnecting DWDM rings or for mesh networking. The paper describes two-degree and multi-degree ROADM architectures and how these relate to the technology alternatives used to implement the ROADMs themselves. Focus is provided on the role and expected evolution of the wavelength selective switch (WSS) which is the primary engine used to power ROADMs.

Spin transport and spin torque in antiferromagnetic devices

NASA Astrophysics Data System (ADS)

Železný, J.; Wadley, P.; Olejník, K.; Hoffmann, A.; Ohno, H.

2018-03-01

Ferromagnets are key materials for sensing and memory applications. In contrast, antiferromagnets, which represent the more common form of magnetically ordered materials, have found less practical application beyond their use for establishing reference magnetic orientations via exchange bias. This might change in the future due to the recent progress in materials research and discoveries of antiferromagnetic spintronic phenomena suitable for device applications. Experimental demonstration of the electrical switching and detection of the Néel order open a route towards memory devices based on antiferromagnets. Apart from the radiation and magnetic-field hardness, memory cells fabricated from antiferromagnets can be inherently multilevel, which could be used for neuromorphic computing. Switching speeds attainable in antiferromagnets far exceed those of ferromagnetic and semiconductor memory technologies. Here, we review the recent progress in electronic spin-transport and spin-torque phenomena in antiferromagnets that are dominantly of the relativistic quantum-mechanical origin. We discuss their utility in pure antiferromagnetic or hybrid ferromagnetic/antiferromagnetic memory devices.

Highly-Ordered 3D Vertical Resistive Switching Memory Arrays with Ultralow Power Consumption and Ultrahigh Density.

PubMed

Al-Haddad, Ahmed; Wang, Chengliang; Qi, Haoyuan; Grote, Fabian; Wen, Liaoyong; Bernhard, Jörg; Vellacheri, Ranjith; Tarish, Samar; Nabi, Ghulam; Kaiser, Ute; Lei, Yong

2016-09-07

Resistive switching random access memories (RRAM) have attracted great scientific and industrial attention for next generation data storage because of their advantages of nonvolatile properties, high density, low power consumption, fast writing/erasing speed, good endurance, and simple and small operation system. Here, by using a template-assisted technique, we demonstrate a three-dimensional highly ordered vertical RRAM device array with density as high as that of the nanopores of the template (10(8)-10(9) cm(-2)), which can also be fabricated in large area. The high crystallinity of the materials, the large contact area and the intimate semiconductor/electrode interface (3 nm interfacial layer) make the ultralow voltage operation (millivolt magnitude) and ultralow power consumption (picowatt) possible. Our procedure for fabrication of the nanodevice arrays in large area can be used for producing many other different materials and such three-dimensional electronic device arrays with the capability to adjust the device densities can be extended to other applications of the next generation nanodevice technology.

Fundamental Scaling Laws in Nanophotonics

PubMed Central

Liu, Ke; Sun, Shuai; Majumdar, Arka; Sorger, Volker J.

2016-01-01

The success of information technology has clearly demonstrated that miniaturization often leads to unprecedented performance, and unanticipated applications. This hypothesis of “smaller-is-better” has motivated optical engineers to build various nanophotonic devices, although an understanding leading to fundamental scaling behavior for this new class of devices is missing. Here we analyze scaling laws for optoelectronic devices operating at micro and nanometer length-scale. We show that optoelectronic device performance scales non-monotonically with device length due to the various device tradeoffs, and analyze how both optical and electrical constrains influence device power consumption and operating speed. Specifically, we investigate the direct influence of scaling on the performance of four classes of photonic devices, namely laser sources, electro-optic modulators, photodetectors, and all-optical switches based on three types of optical resonators; microring, Fabry-Perot cavity, and plasmonic metal nanoparticle. Results show that while microrings and Fabry-Perot cavities can outperform plasmonic cavities at larger length-scales, they stop working when the device length drops below 100 nanometers, due to insufficient functionality such as feedback (laser), index-modulation (modulator), absorption (detector) or field density (optical switch). Our results provide a detailed understanding of the limits of nanophotonics, towards establishing an opto-electronics roadmap, akin to the International Technology Roadmap for Semiconductors. PMID:27869159

Fundamental Scaling Laws in Nanophotonics.

PubMed

Liu, Ke; Sun, Shuai; Majumdar, Arka; Sorger, Volker J

2016-11-21

The success of information technology has clearly demonstrated that miniaturization often leads to unprecedented performance, and unanticipated applications. This hypothesis of "smaller-is-better" has motivated optical engineers to build various nanophotonic devices, although an understanding leading to fundamental scaling behavior for this new class of devices is missing. Here we analyze scaling laws for optoelectronic devices operating at micro and nanometer length-scale. We show that optoelectronic device performance scales non-monotonically with device length due to the various device tradeoffs, and analyze how both optical and electrical constrains influence device power consumption and operating speed. Specifically, we investigate the direct influence of scaling on the performance of four classes of photonic devices, namely laser sources, electro-optic modulators, photodetectors, and all-optical switches based on three types of optical resonators; microring, Fabry-Perot cavity, and plasmonic metal nanoparticle. Results show that while microrings and Fabry-Perot cavities can outperform plasmonic cavities at larger length-scales, they stop working when the device length drops below 100 nanometers, due to insufficient functionality such as feedback (laser), index-modulation (modulator), absorption (detector) or field density (optical switch). Our results provide a detailed understanding of the limits of nanophotonics, towards establishing an opto-electronics roadmap, akin to the International Technology Roadmap for Semiconductors.

Fundamental Scaling Laws in Nanophotonics

NASA Astrophysics Data System (ADS)

Liu, Ke; Sun, Shuai; Majumdar, Arka; Sorger, Volker J.

2016-11-01

The success of information technology has clearly demonstrated that miniaturization often leads to unprecedented performance, and unanticipated applications. This hypothesis of “smaller-is-better” has motivated optical engineers to build various nanophotonic devices, although an understanding leading to fundamental scaling behavior for this new class of devices is missing. Here we analyze scaling laws for optoelectronic devices operating at micro and nanometer length-scale. We show that optoelectronic device performance scales non-monotonically with device length due to the various device tradeoffs, and analyze how both optical and electrical constrains influence device power consumption and operating speed. Specifically, we investigate the direct influence of scaling on the performance of four classes of photonic devices, namely laser sources, electro-optic modulators, photodetectors, and all-optical switches based on three types of optical resonators; microring, Fabry-Perot cavity, and plasmonic metal nanoparticle. Results show that while microrings and Fabry-Perot cavities can outperform plasmonic cavities at larger length-scales, they stop working when the device length drops below 100 nanometers, due to insufficient functionality such as feedback (laser), index-modulation (modulator), absorption (detector) or field density (optical switch). Our results provide a detailed understanding of the limits of nanophotonics, towards establishing an opto-electronics roadmap, akin to the International Technology Roadmap for Semiconductors.

Stress-induced reversible and irreversible ferroelectric domain switching

NASA Astrophysics Data System (ADS)

Chen, Zibin; Huang, Qianwei; Wang, Feifei; Ringer, Simon P.; Luo, Haosu; Liao, Xiaozhou

2018-04-01

Ferroelectric materials have been extensively explored for applications in electronic devices because of their ferroelectric/ferroelastic domain switching behaviour under electric bias or mechanical stress. Recent findings on applying mechanical loading to manipulate reversible logical signals in non-volatile ferroelectric memory devices make ferroelectric materials more attractive to scientists and engineers. However, the dynamical microscopic structural behaviour of ferroelectric domains under stress is not well understood, which limits the applications of ferroelectric/ferroelastic switching in memory devices. Here, the kinetics of reversible and irreversible ferroelectric domain switching induced by mechanical stress in relaxor-based ferroelectrics was explored. In-situ transmission electron microscopy investigation revealed that 90° ferroelastic and 180° ferroelectric domain switching can be induced by low and high mechanical stresses. The nucleation and growth of nanoscale domains overwhelm the defect-induced pinning effect on the stable micro-domain walls. This study provides deep insights for exploring the mechanical kinetics for ferroelectric/ferroelastic domains and a clear pathway to overcome the domain pinning effect of defects in ferroelectrics.

High power ferrite microwave switch

NASA Technical Reports Server (NTRS)

Bardash, I.; Roschak, N. K.

1975-01-01

A high power ferrite microwave switch was developed along with associated electronic driver circuits for operation in a spaceborne high power microwave transmitter in geostationary orbit. Three units were built and tested in a space environment to demonstrate conformance to the required performance characteristics. Each unit consisted of an input magic-tee hybrid, two non-reciprocal latching ferrite phase shifters, an out short-slot 3 db quadrature coupler, a dual driver electronic circuit, and input logic interface circuitry. The basic mode of operation of the high power ferrite microwave switch is identical to that of a four-port, differential phase shift, switchable circulator. By appropriately designing the phase shifters and electronic driver circuits to operate in the flux-transfer magnetization mode, power and temperature insensitive operation was achieved. A list of the realized characteristics of the developed units is given.

Light emitting diodes as a plant lighting source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bula, R.J.; Tennessen, D.J.; Morrow, R.C.

1994-12-31

Electroluminescence in solid materials is defined as the generation of light by the passage of an electric current through a body of solid material under an applied electric field. A specific type of electroluminescence, first noted by Lossew in 1923, involves the generation of photons when electrons are passed through a p-n junction of certain solid materials (junction of a n-type semiconductor, an electron donor, and a p-type semiconductor, an electron acceptor). Development efforts to translate these observations into visible light emitting devices, however, was not undertaken until the 1950s. The term, light emitting diode (LEDs), was first used inmore » a report by Wolfe, et al., in 1955. The development of this light emitting semiconductor technology dates back less than 30 years. During this period of time, the LED has evolved from a rare and expensive light generating device to one of the most widely used electronic components. The most popular applications of the LED are as indicators or as optoelectronic switches. However, several recent advances in LED technology have made possible the utilization of LEDs for applications that require a high photon flux, such as for plant lighting in controlled environments. The new generation of LEDs based on a gallium aluminum arsenide (GaAlAS) semiconductor material fabricated as a double heterostructure on a transparent substrate has opened up many new applications for these LEDs.« less

Concepts, characterization, and modeling of MEMS microswitches with gold contacts in MUMPs

NASA Astrophysics Data System (ADS)

Lafontan, Xavier; Dufaza, Christian; Robert, Michel; Pressecq, Francis; Perez, Guy

2001-04-01

This paper demonstrates that RF MEMS micro-switches can be realized with a low cost MEMS technology such as MUMPs. Two different switches are proposed, namely the hinged beam switch and the gold overflowing switch. Their concepts, design and characterization are described in details. On-resistance as low as 5 - 6 (Omega) for the gold overflowing switch and 2 - 3 (Omega) for the hinged beam switch have been measured. Finally, experimental measurements showed that force and electrical current had strong influences on the overall electrical contact.

Nonlinear space charge dynamics in mixed ionic-electronic conductors: Resistive switching and ferroelectric-like hysteresis of electromechanical response

DOE Office of Scientific and Technical Information (OSTI.GOV)

Morozovska, Anna N.; Morozovsky, Nicholas V.; Eliseev, Eugene A.

We performed self-consistent modelling of nonlinear electrotransport and electromechanical response of thin films of mixed ionic-electronic conductors (MIEC) allowing for steric effects of mobile charged defects (ions, protons, or vacancies), electron degeneration, and Vegard stresses. We establish correlations between the features of the nonlinear space-charge dynamics, current-voltage, and bending-voltage curves for different types of the film electrodes. A pronounced ferroelectric-like hysteresis of the bending-voltage loops and current maxima on the double hysteresis current-voltage loops appear for the electron-transport electrodes. The double hysteresis loop with pronounced humps indicates a memristor-type resistive switching. The switching occurs due to the strong nonlinear couplingmore » between the electronic and ionic subsystems. A sharp meta-stable maximum of the electron density appears near one open electrode and moves to another one during the periodic change of applied voltage. Our results can explain the nonlinear nature and correlation of electrical and mechanical memory effects in thin MIEC films. The analytical expression proving that the electrically induced bending of MIEC films can be detected by interferometric methods is derived.« less

A reversible single-molecule switch based on activated antiaromaticity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yin, Xiaodong; Zang, Yaping; Zhu, Liangliang

Single-molecule electronic devices provide researchers with an unprecedented ability to relate novel physical phenomena to molecular chemical structures. Typically, conjugated aromatic molecular backbones are relied upon to create electronic devices, where the aromaticity of the building blocks is used to enhance conductivity. We capitalize on the classical physical organic chemistry concept of Hückel antiaromaticity by demonstrating a single-molecule switch that exhibits low conductance in the neutral state and, upon electrochemical oxidation, reversibly switches to an antiaromatic high-conducting structure. We form single-molecule devices using the scanning tunneling microscope–based break-junction technique and observe an on/off ratio of ~70 for a thiophenylidene derivativemore » that switches to an antiaromatic state with 6-4-6-p electrons. Through supporting nuclear magnetic resonance measurements, we show that the doubly oxidized core has antiaromatic character and we use density functional theory calculations to rationalize the origin of the high-conductance state for the oxidized single-molecule junction. Together, our work demonstrates how the concept of antiaromaticity can be exploited to create single-molecule devices that are highly conducting.« less

A reversible single-molecule switch based on activated antiaromaticity

DOE PAGES

Yin, Xiaodong; Zang, Yaping; Zhu, Liangliang; ...

2017-10-27

Single-molecule electronic devices provide researchers with an unprecedented ability to relate novel physical phenomena to molecular chemical structures. Typically, conjugated aromatic molecular backbones are relied upon to create electronic devices, where the aromaticity of the building blocks is used to enhance conductivity. We capitalize on the classical physical organic chemistry concept of Hückel antiaromaticity by demonstrating a single-molecule switch that exhibits low conductance in the neutral state and, upon electrochemical oxidation, reversibly switches to an antiaromatic high-conducting structure. We form single-molecule devices using the scanning tunneling microscope–based break-junction technique and observe an on/off ratio of ~70 for a thiophenylidene derivativemore » that switches to an antiaromatic state with 6-4-6-p electrons. Through supporting nuclear magnetic resonance measurements, we show that the doubly oxidized core has antiaromatic character and we use density functional theory calculations to rationalize the origin of the high-conductance state for the oxidized single-molecule junction. Together, our work demonstrates how the concept of antiaromaticity can be exploited to create single-molecule devices that are highly conducting.« less

New scheme for image edge detection using the switching mechanism of nonlinear optical material

NASA Astrophysics Data System (ADS)

Pahari, Nirmalya; Mukhopadhyay, Sourangshu

2006-03-01

The limitations of electronics in conducting parallel arithmetic, algebraic, and logic processing are well known. Very high-speed (terahertz) performance cannot be expected in conventional electronic mechanisms. To achieve such performance we can introduce optics instead of electronics for information processing, computing, and data handling. Nonlinear optical material (NOM) is a successful candidate in this regard to play a major role in the domain of optically controlled switching systems. The character of some NOMs is such as to reflect the probe beam in the presence of two read beams (or pump beams) exciting the material from opposite directions, using the principle of four-wave mixing. In image processing, edge extraction from an image is an important and essential task. Several optical methods of digital image processing are used for properly evaluating the image edges. We propose here a new method of image edge detection, extraction, and enhancement by use of AND-based switching operations with NOM. In this process we have used the optically inverted image of a supplied image. This can be obtained by the EXOR switching operation of the NOM.

The effect of doping Sb on the electronic structure and the device characteristics of Ovonic Threshold Switches based on Ge-Se.

PubMed

Shin, Sang-Yeol; Choi, J M; Seo, Juhee; Ahn, Hyung-Woo; Choi, Yong Gyu; Cheong, Byung-ki; Lee, Suyoun

2014-11-18

The Ovonic Threshold Switch (OTS) based on an amorphous chalcogenide material has attracted much interest as a promising candidate for a high-performance thin-film switching device enabling 3D-stacking of memory devices. In this work, we studied on the electronic structure of amorphous Sb-doped Ge(0.6)Se(0.4) (in atomic mole fraction) film and its characteristics as to OTS devices. From the optical absorption spectroscopy measurement, the band gap (Eg) was found to decrease with increasing Sb content. In addition, as Sb content increased, the activation energy (Ea) for electrical conduction was found to decrease down to about one third of Eg from a half. As to the device characteristics, we found that the threshold switching voltage (Vth) drastically decreased with the Sb content. These results, being accountable in terms of the changes in the bonding configuration of constituent atoms as well as in the electronic structure such as the energy gap and trap states, advance an effective method of compositional adjustment to modulate Vth of an OTS device for various applications.

Photochromic molecules as building blocks for molecular electronics.

PubMed

Peter, Belser

2010-01-01

Energy and electron transfer processes can be easily induced by a photonic excitation of a donor metal complex ([Ru(bpy)3]2), which is connected via a wire-type molecular fragment to an acceptor metal complex ([Os(bpy)3]2+). The rate constant for the transfer process can be determined by emission measurements of the two connected metal complexes. The system can be modified by incorporation of a switching unit or an interrupter into the wire, influencing the transfer process. Such a molecular device corresponds to an interrupter, mimic the same function applied in molecular electronics. We have used organic switches, which show photochromic properties. By irradiation with light of different wavelengths, the switch changes its functionality by a photochemical reaction from an OFF- to an ON-state and vice versa. The ON- respectively OFF-state is manifested by a color change but also in different conductivity properties for energy and electron transfer processes. Therefore, the mentioned molecular device can work as a simple interrupter, controlling the rate of the transfer processes.

Optoelectronics components and technology for optical networking in China: recent progress and future trends

NASA Astrophysics Data System (ADS)

Jiang, Shan; Liu, Shuihua

2004-04-01

Current optical communication systems are more and more relying on the advanced opto-electronic components. A series of revolutionary optical and optoelectronics components technology accounts for the fast progress and field deployment of high-capacity telecommunication and data-transmission systems. Since 1990s, the optical communication industry in China entered a high-speed development period and its wide deployment had already established the solid base for China information infrastructure. In this presentation, the main progress of optoelectronics components and technology in China are reviewed, which includes semiconductor laser diode/photo receiver, fiber optical amplifier, DWDM multiplexer/de-multiplexer, dispersion compensation components and all optical network node components, such as optical switch, OADM, tunable optical filters and variable optical attenuators, etc. Integration discrete components into monolithic/hybrid platform component is an inevitable choice for the consideration of performance, mass production and cost reduction. The current status and the future trends of OEIC and PIC components technology in China will also be discuss mainly on the monolithic integration DFB LD + EA modulator, and planar light-wave circuit (PLC) technology, etc.

Direct Observation of Conducting Filaments in Tungsten Oxide Based Transparent Resistive Switching Memory.

PubMed

Qian, Kai; Cai, Guofa; Nguyen, Viet Cuong; Chen, Tupei; Lee, Pooi See

2016-10-05

Transparent nonvolatile memory has great potential in integrated transparent electronics. Here, we present highly transparent resistive switching memory using stoichiometric WO 3 film produced by cathodic electrodeposition with indium tin oxide electrodes. The memory device demonstrates good optical transmittance, excellent operative uniformity, low operating voltages (+0.25 V/-0.42 V), and long retention time (>10 4 s). Conductive atomic force microscopy, ex situ transmission electron microscopy, and X-ray photoelectron spectroscopy experiments directly confirm that the resistive switching effects occur due to the electric field-induced formation and annihilation of the tungsten-rich conductive channel between two electrodes. Information on the physical and chemical nature of conductive filaments offers insightful design strategies for resistive switching memories with excellent performances. Moreover, we demonstrate the promising applicability of the cathodic electrodeposition method for future resistive memory devices.

Magnetics and Power System Upgrades for the Pegasus-U Experiment

NASA Astrophysics Data System (ADS)

Preston, R. C.; Bongard, M. W.; Fonck, R. J.; Lewicki, B. T.

2014-10-01

To support the missions of developing local helicity injection startup and exploiting advanced tokamak physics studies at near unity aspect ratio, the proposed Pegasus-U will include expanded magnetic systems and associated power supplies. A new centerstack increases the toroidal field seven times to 1 T and the volt-seconds by a factor of six while maintaining operation at an aspect ratio of 1.2. The poloidal field magnet system is expanded to support improved shape control and robust double or single null divertor operation at the full plasma current of 0.3 MA. An integrated digital control system based on Field Programmable Gate Arrays (FPGAs) provides active feedback control of all magnet currents. Implementation of the FPGAs is achieved with modular noise reducing electronics. The digital feedback controllers replace the existing analog systems and switch multiplexing technology. This will reduce noise sensitivity and allow the operational Ohmic power supply voltage to increase from 2100 V to its maximum capacity of 2400 V. The feedback controller replacement also allows frequency control for ``freewheeling''--stopping the switching for a short interval and allowing the current to coast. The FPGAs assist in optimizing pulse length by having programmable switching events to minimize energy losses. They also allow for more efficient switching topologies that provide improved stored energy utilization, and support increasing the pulse length from 25 ms to 50-100 ms. Work supported by US DOE Grant DE-FG02-96ER54375.

Thermal and Mechanical Microspacecraft Technologies for X-2000 Future Deliveries

NASA Technical Reports Server (NTRS)

Birur, Gaj; Bruno, Robin

1999-01-01

Thermal and mechanical technologies are an important part of the X-2000 Future Delivery (X-2000 FD) microspacecraft. A wide range of future space missions are expected to utilize the technologies and the architecture developed by the X-2000 FD. These technologies, besides being small in physical size, make the tiny spacecraft robust and flexible. The X2000 FD architecture is designed to be highly reliable and suitable for a wide range of missions such as planetary landers/orbiters/flybys, earth orbiters, cometary flybys/landers/sample returns, etc. One of the key ideas used in the development of these technologies and architecture is that several functions be in included in each of the thermal and mechanical elements. One of the thermal architecture being explored for the X-2000 FD microspacecraft is integrated thermal energy management of the complete spacecraft using a fluid loop. The robustness and the simplicity of the loop and the flexibility with which it can be integrated in the spacecraft have made it attractive for applications to X-2000 FD. Some of the thermal technologies to be developed as a part of this architecture are passive and active cooling loops, electrically variable emittance surfaces, miniature thermal switches, and specific high density electronic cooling technologies. In the mechanical area, multifunction architecture for the structural elements will be developed. The multifunction aspect is expected to substantially reduce the mass and volume of the spacecraft. Some of the technologies that will be developed are composite material panels incorporating electronics, cabling, and thermal elements in them. The paper to be presented at the 1999 conference, will describe the progress made so far in the microspacecraft thermal and mechanical technologies and approaches for the X2000 Future Deliveries microspacecraft.

Broadband optical switch based on liquid crystal dynamic scattering.

PubMed

Geis, M W; Bos, P J; Liberman, V; Rothschild, M

2016-06-27

This work demonstrates a novel broadband optical switch, based on dynamic-scattering effect in liquid crystals (LCs). Dynamic-scattering-mode technology was developed for display applications over four decades ago, but was displaced in favor of the twisted-nematic LCs. However, with the recent development of more stable LCs, dynamic scattering provides advantages over other technologies for optical switching. We demonstrate broadband polarization-insensitive attenuation of light directly passing thought the cell by 4 to 5 orders of magnitude at 633 nm. The attenuation is accomplished by light scattering to higher angles. Switching times of 150 μs to 10% transmission have been demonstrated. No degradation of devices is found after hundreds of switching cycles. The light-rejection mechanism is due to scattering, induced by disruption of LC director orientation with dopant ion motion with an applied electric field. Angular dependence of scattering is characterized as a function of bias voltage.

Tests of a low-pressure switch protected by a saturating inductor

NASA Astrophysics Data System (ADS)

Lauer, E. J.; Birx, D. L.

1981-10-01

A triggered low-pressure switch was tested switching a charged capacitor across a damping resistor simulating a transformer. A series saturating inductor protected the switch from electron beam anode damage. The capacitor was 15 micro F and charge voltages up to 50 kV were used. The time to current maximum was 5 to 8 micro S. The current terminated at about 50 micro S and voltage could be reapplied at about 100 micro S.

Evaluation of the optical switching characteristics of erbium-doped fibres for the development of a fibre Bragg grating sensor interrogator

NASA Astrophysics Data System (ADS)

Rigas, Evangelos; Correia, R.; Stathopoulos, N. A.; Savaidis, S. P.; James, S. W.; Bhattacharyya, D.; Kirby, P. B.; Tatam, R. P.

2014-05-01

A polling topology that employs optical switching based on the properties of erbium-doped fibres (EDFs) is used to interrogate an array of FBGs. The properties of the EDF are investigated in its pumped and un-pumped states and the EDFs' switching properties are evaluated by comparing them with a high performance electronically controlled MEM optical switch. Potential advantages of the proposed technique are discussed.

Facilitation of Ferroelectric Switching via Mechanical Manipulation of Hierarchical Nanoscale Domain Structures.

PubMed

Chen, Zibin; Hong, Liang; Wang, Feifei; Ringer, Simon P; Chen, Long-Qing; Luo, Haosu; Liao, Xiaozhou

2017-01-06

Heterogeneous ferroelastic transition that produces hierarchical 90° tetragonal nanodomains via mechanical loading and its effect on facilitating ferroelectric domain switching in relaxor-based ferroelectrics were explored. Combining in situ electron microscopy characterization and phase-field modeling, we reveal the nature of the transition process and discover that the transition lowers by 40% the electrical loading threshold needed for ferroelectric domain switching. Our results advance the fundamental understanding of ferroelectric domain switching behavior.

Metallic oxide switches using thick film technology

NASA Technical Reports Server (NTRS)

Patel, D. N.; Williams, L., Jr.

1974-01-01

Metallic oxide thick film switches were processed on alumina substrates using thick film technology. Vanadium pentoxide in powder form was mixed with other oxides e.g., barium, strontium copper and glass frit, ground to a fine powder. Pastes and screen printable inks were made using commercial conductive vehicles and appropriate thinners. Some switching devices were processed by conventional screen printing and firing of the inks and commercial cermet conductor terminals on 96% alumina substrates while others were made by applying small beads or dots of the pastes between platinum wires. Static, and dynamic volt-ampere, and pulse tests indicate that the switching and self-oscillatory characteristics of these devices could make them useful in memory element, oscillator, and automatic control applications.

Silicon-Carbide Power MOSFET Performance in High Efficiency Boost Power Processing Unit for Extreme Environments

NASA Technical Reports Server (NTRS)

Ikpe, Stanley A.; Lauenstein, Jean-Marie; Carr, Gregory A.; Hunter, Don; Ludwig, Lawrence L.; Wood, William; Del Castillo, Linda Y.; Fitzpatrick, Fred; Chen, Yuan

2016-01-01

Silicon-Carbide device technology has generated much interest in recent years. With superior thermal performance, power ratings and potential switching frequencies over its Silicon counterpart, Silicon-Carbide offers a greater possibility for high powered switching applications in extreme environment. In particular, Silicon-Carbide Metal-Oxide- Semiconductor Field-Effect Transistors' (MOSFETs) maturing process technology has produced a plethora of commercially available power dense, low on-state resistance devices capable of switching at high frequencies. A novel hard-switched power processing unit (PPU) is implemented utilizing Silicon-Carbide power devices. Accelerated life data is captured and assessed in conjunction with a damage accumulation model of gate oxide and drain-source junction lifetime to evaluate potential system performance at high temperature environments.

Cmos spdt switch for wlan applications

NASA Astrophysics Data System (ADS)

Bhuiyan, M. A. S.; Reaz, M. B. I.; Rahman, L. F.; Minhad, K. N.

2015-04-01

WLAN has become an essential part of our today's life. The advancement of CMOS technology let the researchers contribute low power, size and cost effective WLAN devices. This paper proposes a single pole double through transmit/receive (T/R) switch for WLAN applications in 0.13 μm CMOS technology. The proposed switch exhibit 1.36 dB insertion loss, 25.3 dB isolation and 24.3 dBm power handling capacity. Moreover, it only dissipates 786.7 nW power per cycle. The switch utilizes only transistor aspect ratio optimization and resistive body floating technique to achieve such desired performance. In this design the use of bulky inductor and capacitor is avoided to evade imposition of unwanted nonlinearities to the communication signal.

Electronic structure, magnetism and thermoelectricity in layered perovskites: Sr2SnMnO6 and Sr2SnFeO6

NASA Astrophysics Data System (ADS)

Khandy, Shakeel Ahmad; Gupta, Dinesh C.

2017-11-01

Layered structures especially perovskites have titanic potential for novel device applications and thanks to the multifunctional properties displayed in these materials. We forecast and justify the robust spin-polarized ferromagnetism in half-metallic Sr2SnFeO6 and semiconducting Sr2SnMnO6 perovskite oxides. Different approximation methods have been argued to put forward their physical properties. The intriguingly intricate electronic band structures favor the application of these materials in spintronics. The transport parameters like Seebeck coefficient, electrical and thermal conductivity, have been put together to establish their thermoelectric response. Finally, the layered oxides are found to switch their application as thermoelectric materials and hence, these concepts design the principles of the technologically desired thermoelectric and spin based devices.

Investigation of Optically Induced Avalanching in GaAs

DTIC Science & Technology

1989-06-01

by Bovino , et al 4 to increase the hold off voltage. The button switch design of Fig. 4c has been used by several researchers5 ’ 7 to obtain the...ul Long flashover palh Figure 3b. 434 Optical Jlatlern a. Mourou Switch b. Bovino Switch c. Button Switch Figure 4. Photoconductive Switches...Technology and Devices Laboratory, ERADCOM (by L. Bovino , et. all) 4 • The deposition recipe for the contacts is 1) 50 ANi (provides contact to GaAs

Study of solar array switching power management technology for space power system

NASA Technical Reports Server (NTRS)

Cassinelli, J. E.

1982-01-01

This report documents work performed on the Solar Array Switching Power Management Study. Mission characteristics for three missions were defined to the depth necessary to determine their power management requirements. Solar array switching concepts were identified that could safisfy the mission requirements. These switching concepts were compared with a conventional buck regulator system on the basis of cost, weight and volume, reliability, efficiency and thermal control. For the missions reviewed, solar array switching provided significant advantages in all areas of comparison.

Study of solar array switching power management technology for space power system

NASA Technical Reports Server (NTRS)

Cassinelli, J. E.

1982-01-01

This report documents work performed on the Solar Array Switching Power Management Study. Mission characteristics for three missions were defined to the depth necessary to determine their power management requirements. Solar array switching concepts which could satisfy the mission requirements were identified. The switching concepts were compared with a conventional buck regulator system for cost, weight and volume, reliability, efficiency and thermal control. Solar array switching provided significant advantages in all areas of comparison for the reviewed missions.

Energy stores and switches for rail-launcher systems

NASA Technical Reports Server (NTRS)

Weldon, W. F.; Zowarka, R. C.; Marshall, R. A.

1983-01-01

An overview of existing switch and power supply technology applicable to space launch, a new candidate pulsed power supply for Earth-to-space rail launcher duty, the inverse railgun flux compressor, and a set of switching experiments to study further the feasibility of Earth-to-space launch are discussed.

Energy stores and switches for rail-launcher systems

NASA Astrophysics Data System (ADS)

Weldon, W. F.; Zowarka, R. C.; Marshall, R. A.

An overview of existing switch and power supply technology applicable to space launch, a new candidate pulsed power supply for Earth-to-space rail launcher duty, the inverse railgun flux compressor, and a set of switching experiments to study further the feasibility of Earth-to-space launch are discussed.

Advanced development of double-injection, deep-impurity semiconductor switches

NASA Technical Reports Server (NTRS)

Hanes, M. H.

1987-01-01

Deep-impurity, double-injection devices, commonly refered to as (DI) squared devices, represent a class of semiconductor switches possessing a very high degree of tolerance to electron and neutron irradiation and to elevated temperature operation. These properties have caused them to be considered as attractive candidates for space power applications. The design, fabrication, and testing of several varieties of (DI) squared devices intended for power switching are described. All of these designs were based upon gold-doped silicon material. Test results, along with results of computer simulations of device operation, other calculations based upon the assumed mode of operation of (DI) squared devices, and empirical information regarding power semiconductor device operation and limitations, have led to the conculsion that these devices are not well suited to high-power applications. When operated in power circuitry configurations, they exhibit high-power losses in both the off-state and on-state modes. These losses are caused by phenomena inherent to the physics and material of the devices and cannot be much reduced by device design optimizations. The (DI) squared technology may, however, find application in low-power functions such as sensing, logic, and memory, when tolerance to radiation and temperature are desirable (especially is device performance is improved by incorporation of deep-level impurities other than gold.

Optical studies of current-induced magnetization switching and photonic quantum states

NASA Astrophysics Data System (ADS)

Lorenz, Virginia

2017-04-01

The ever-decreasing size of electronic components is leading to a fundamental change in the way computers operate, as at the few-nanometer scale, resistive heating and quantum mechanics prohibit efficient and stable operation. One of the most promising next-generation computing paradigms is Spintronics, which uses the spin of the electron to manipulate and store information in the form of magnetic thin films. I will present our optical studies of the fundamental mechanisms by which we can efficiently manipulate magnetization using electrical current. Although electron spin is a quantum-mechanical property, Spintronics relies on macroscopic magnetization and thus does not take advantage of quantum mechanics in the algorithms used to encode and transmit information. For the second part of my talk, I will present our work under the umbrella of new computing and communication technologies based on the quantum mechanical properties of photons. Quantum technologies often require the carriers of information, or qubits, to have specific properties. Photonic quantum states are good information carriers because they travel fast and are robust to environmental fluctuations, but characterizing and controlling photonic sources so the photons have just the right properties is still a challenge. I will describe our work towards enabling quantum-physics-based secure long-distance communication using photons.

Intelligent optical networking with photonic cross connections

NASA Astrophysics Data System (ADS)

Ceuppens, L.; Jerphagnon, Olivier L.; Lang, Jonathan; Banerjee, Ayan; Blumenthal, Daniel J.

2002-09-01

Optical amplification and dense wavelength division multiplexing (DWDM) have fundamentally changed optical transport networks. Now that these technologies are widely adopted, the bottleneck has moved from the outside line plant to nodal central offices, where electrical switching equipment has not kept pace. While OEO technology was (and still is) necessary for grooming and traffic aggregation, the transport network has dramatically changed, requiring a dramatic rethinking of how networks need to be designed and operated. While todays transport networks carry remarkable amounts of bandwidth, their optical layer is fundamentally static and provides for only simple point-to-point transport. Efficiently managing the growing number of wavelengths can only be achieved through a new breed of networking element. Photonic switching systems (PSS) can efficiently execute these functions because they are bit rate, wavelength, and protocol transparent. With their all-optical switch cores and interfaces, PSS can switch optical signals at various levels of granularity wavelength, sub band, and composite DWDM fiber levels. Though cross-connect systems with electrical switch cores are available, they perform these functions at very high capital costs and operational inefficiencies. This paper examines enabling technologies for deployment of intelligent optical transport networks (OTN), and takes a practical perspective on survivability architecture migration and implementation issues.

Molecular switches and motors on surfaces.

PubMed

Pathem, Bala Krishna; Claridge, Shelley A; Zheng, Yue Bing; Weiss, Paul S

2013-01-01

Molecular switches and motors respond structurally, electronically, optically, and/or mechanically to external stimuli, testing and potentially enabling extreme miniaturization of optoelectronic devices, nanoelectromechanical systems, and medical devices. The assembly of motors and switches on surfaces makes it possible both to measure the properties of individual molecules as they relate to their environment and to couple function between assembled molecules. In this review, we discuss recent progress in assembling molecular switches and motors on surfaces, measuring static and dynamic structures, understanding switching mechanisms, and constructing functional molecular materials and devices. As demonstrative examples, we choose a representative molecule from three commonly studied classes including molecular switches, photochromic molecules, and mechanically interlocked molecules. We conclude by offering perspectives on the future of molecular switches and motors on surfaces.

Prosthetic design directives: Low-cost hands within reach.

PubMed

Jones, G K; Rosendo, A; Stopforth, R

2017-07-01

Although three million people around the world suffer from the lack of one or both upper limbs 80% of this number is located within developing countries. While prosthetic prices soar with technology 3D printing and low cost electronics present a sensible solution for those that cannot afford expensive prosthetics. The electronic and control design of a low-cost prosthetic hand, the Touch Hand II, is discussed. This paper shows that sensorless techniques can be used to reduce design complexities, costs, and provide easier access to the electronics. A closing and opening finite state machine (COFSM) was developed to handle the actuated digit joint control state and a supervisory switching control scheme, used for speed and grip strength control. Three torque and speed settings were created to be preset for specific grasps. The hand was able to replicate ten frequently used grasps and grip some common objects. Future work is necessary to enable a user to control it with myoelectric signals (MESs) and to solve operational problems related to electromagnetic interference (EMI).

A Review on Disorder-Driven Metal–Insulator Transition in Crystalline Vacancy-Rich GeSbTe Phase-Change Materials

PubMed Central

Wang, Jiang-Jing; Xu, Ya-Zhi; Mazzarello, Riccardo; Wuttig, Matthias; Zhang, Wei

2017-01-01

Metal–insulator transition (MIT) is one of the most essential topics in condensed matter physics and materials science. The accompanied drastic change in electrical resistance can be exploited in electronic devices, such as data storage and memory technology. It is generally accepted that the underlying mechanism of most MITs is an interplay of electron correlation effects (Mott type) and disorder effects (Anderson type), and to disentangle the two effects is difficult. Recent progress on the crystalline Ge1Sb2Te4 (GST) compound provides compelling evidence for a disorder-driven MIT. In this work, we discuss the presence of strong disorder in GST, and elucidate its effects on electron localization and transport properties. We also show how the degree of disorder in GST can be reduced via thermal annealing, triggering a disorder-driven metal–insulator transition. The resistance switching by disorder tuning in crystalline GST may enable novel multilevel data storage devices. PMID:28773222

A Review on Disorder-Driven Metal-Insulator Transition in Crystalline Vacancy-Rich GeSbTe Phase-Change Materials.

PubMed

Wang, Jiang-Jing; Xu, Ya-Zhi; Mazzarello, Riccardo; Wuttig, Matthias; Zhang, Wei

2017-07-27

Metal-insulator transition (MIT) is one of the most essential topics in condensed matter physics and materials science. The accompanied drastic change in electrical resistance can be exploited in electronic devices, such as data storage and memory technology. It is generally accepted that the underlying mechanism of most MITs is an interplay of electron correlation effects (Mott type) and disorder effects (Anderson type), and to disentangle the two effects is difficult. Recent progress on the crystalline Ge₁Sb₂Te₄ (GST) compound provides compelling evidence for a disorder-driven MIT. In this work, we discuss the presence of strong disorder in GST, and elucidate its effects on electron localization and transport properties. We also show how the degree of disorder in GST can be reduced via thermal annealing, triggering a disorder-driven metal-insulator transition. The resistance switching by disorder tuning in crystalline GST may enable novel multilevel data storage devices.

Silicon-On-Insulator (SOI) Devices and Mixed-Signal Circuits for Extreme Temperature Applications

NASA Technical Reports Server (NTRS)

Patterson, Richard; Hammoud, Ahmad; Elbuluk, Malik

2008-01-01

Electronic systems in planetary exploration missions and in aerospace applications are expected to encounter extreme temperatures and wide thermal swings in their operational environments. Electronics designed for such applications must, therefore, be able to withstand exposure to extreme temperatures and to perform properly for the duration of the missions. Electronic parts based on silicon-on-insulator (SOI) technology are known, based on device structure, to provide faster switching, consume less power, and offer better radiation-tolerance compared to their silicon counterparts. They also exhibit reduced current leakage and are often tailored for high temperature operation. However, little is known about their performance at low temperature. The performance of several SOI devices and mixed-signal circuits was determined under extreme temperatures, cold-restart, and thermal cycling. The investigations were carried out to establish a baseline on the functionality and to determine suitability of these devices for use in space exploration missions under extreme temperatures. The experimental results obtained on selected SOI devices are presented and discussed in this paper.

Development of UItra-Low Temperature Motor Controllers: Ultra Low Temperatures Evaluation and Characterization of Semiconductor Technologies For The Next Generation Space Telescope

NASA Technical Reports Server (NTRS)

Elbuluk, Malik E.

2003-01-01

Electronics designed for low temperature operation will result in more efficient systems than room temperature. This improvement is a result of better electronic, electrical, and thermal properties of materials at low temperatures. In particular, the performance of certain semiconductor devices improves with decreasing temperature down to ultra-low temperature (-273 'C). The Low Temperature Electronics Program at the NASA Glenn Research Center focuses on research and development of electrical components and systems suitable for applications in deep space missions. Research is being conducted on devices and systems for use down to liquid helium temperatures (-273 'C). Some of the components that are being characterized include semiconductor switching devices, resistors, magnetics, and capacitors. The work performed this summer has focused on the evaluation of silicon-, silicon-germanium- and gallium-Arsenide-based (GaAs) bipolar, MOS and CMOS discrete components and integrated circuits (ICs), from room temperature (23 'C) down to ultra low temperatures (-263 'C).

Sub-nanometre resolution of atomic motion during electronic excitation in phase-change materials.

PubMed

Mitrofanov, Kirill V; Fons, Paul; Makino, Kotaro; Terashima, Ryo; Shimada, Toru; Kolobov, Alexander V; Tominaga, Junji; Bragaglia, Valeria; Giussani, Alessandro; Calarco, Raffaella; Riechert, Henning; Sato, Takahiro; Katayama, Tetsuo; Ogawa, Kanade; Togashi, Tadashi; Yabashi, Makina; Wall, Simon; Brewe, Dale; Hase, Muneaki

2016-02-12

Phase-change materials based on Ge-Sb-Te alloys are widely used in industrial applications such as nonvolatile memories, but reaction pathways for crystalline-to-amorphous phase-change on picosecond timescales remain unknown. Femtosecond laser excitation and an ultrashort x-ray probe is used to show the temporal separation of electronic and thermal effects in a long-lived (>100 ps) transient metastable state of Ge2Sb2Te5 with muted interatomic interaction induced by a weakening of resonant bonding. Due to a specific electronic state, the lattice undergoes a reversible nondestructive modification over a nanoscale region, remaining cold for 4 ps. An independent time-resolved x-ray absorption fine structure experiment confirms the existence of an intermediate state with disordered bonds. This newly unveiled effect allows the utilization of non-thermal ultra-fast pathways enabling artificial manipulation of the switching process, ultimately leading to a redefined speed limit, and improved energy efficiency and reliability of phase-change memory technologies.

Sub-nanometre resolution of atomic motion during electronic excitation in phase-change materials

DOE PAGES

Mitrofanov, Kirill V.; Fons, Paul; Makino, Kotaro; ...

2016-02-12

Phase-change materials based on Ge-Sb-Te alloys are widely used in industrial applications such as nonvolatile memories, but reaction pathways for crystalline-to-amorphous phase-change on picosecond timescales remain unknown. Femtosecond laser excitation and an ultrashort x-ray probe is used to show the temporal separation of electronic and thermal effects in a long-lived (>100 ps) transient metastable state of Ge 2Sb 2Te 5 with muted interatomic interaction induced by a weakening of resonant bonding. Due to a specific electronic state, the lattice undergoes a reversible nondestructive modification over a nanoscale region, remaining cold for 4 ps. An independent time-resolved x-ray absorption fine structuremore » experiment confirms the existence of an intermediate state with disordered bonds. Furthermore, this newly unveiled effect allows the utilization of non-thermal ultra-fast pathways enabling artificial manipulation of the switching process, ultimately leading to a redefined speed limit, and improved energy efficiency and reliability of phase-change memory technologies.« less

Ultra High-Speed Radio Frequency Switch Based on Photonics.

PubMed

Ge, Jia; Fok, Mable P

2015-11-26

Microwave switches, or Radio Frequency (RF) switches have been intensively used in microwave systems for signal routing. Compared with the fast development of microwave and wireless systems, RF switches have been underdeveloped particularly in terms of switching speed and operating bandwidth. In this paper, we propose a photonics based RF switch that is capable of switching at tens of picoseconds speed, which is hundreds of times faster than any existing RF switch technologies. The high-speed switching property is achieved with the use of a rapidly tunable microwave photonic filter with tens of gigahertz frequency tuning speed, where the tuning mechanism is based on the ultra-fast electro-optics Pockels effect. The RF switch has a wide operation bandwidth of 12 GHz and can go up to 40 GHz, depending on the bandwidth of the modulator used in the scheme. The proposed RF switch can either work as an ON/OFF switch or a two-channel switch, tens of picoseconds switching speed is experimentally observed for both type of switches.

NASA. Lewis Research Center Advanced Modulation and Coding Project: Introduction and overview

NASA Technical Reports Server (NTRS)

Budinger, James M.

1992-01-01

The Advanced Modulation and Coding Project at LeRC is sponsored by the Office of Space Science and Applications, Communications Division, Code EC, at NASA Headquarters and conducted by the Digital Systems Technology Branch of the Space Electronics Division. Advanced Modulation and Coding is one of three focused technology development projects within the branch's overall Processing and Switching Program. The program consists of industry contracts for developing proof-of-concept (POC) and demonstration model hardware, university grants for analyzing advanced techniques, and in-house integration and testing of performance verification and systems evaluation. The Advanced Modulation and Coding Project is broken into five elements: (1) bandwidth- and power-efficient modems; (2) high-speed codecs; (3) digital modems; (4) multichannel demodulators; and (5) very high-data-rate modems. At least one contract and one grant were awarded for each element.

Microwave integrated circuits for space applications

NASA Technical Reports Server (NTRS)

Leonard, Regis F.; Romanofsky, Robert R.

1991-01-01

Monolithic microwave integrated circuits (MMIC), which incorporate all the elements of a microwave circuit on a single semiconductor substrate, offer the potential for drastic reductions in circuit weight and volume and increased reliability, all of which make many new concepts in electronic circuitry for space applications feasible, including phased array antennas. NASA has undertaken an extensive program aimed at development of MMICs for space applications. The first such circuits targeted for development were an extension of work in hybrid (discrete component) technology in support of the Advanced Communication Technology Satellite (ACTS). It focused on power amplifiers, receivers, and switches at ACTS frequencies. More recent work, however, focused on frequencies appropriate for other NASA programs and emphasizes advanced materials in an effort to enhance efficiency, power handling capability, and frequency of operation or noise figure to meet the requirements of space systems.

A look into the crystal ball: The next 25 years

NASA Technical Reports Server (NTRS)

Hellwig, Helmut

1994-01-01

The PTTI Planning Meeting was born at about the same time as the atomic definition of the unit of time, the second. This use of the cesium resonance was made possible by advances in quantum electronics during the preceding decade which resulted in commercial availability of cesium, rubidium, and hydrogen clocks and frequency standards. Twenty-five years later these types of clocks still are the backbone of time and frequency applications; together with a variety of crystal oscillators, transmitters, and receivers, as well as signal distribution, conditioning and switching systems, atomic clocks are an essential part of the infrastructure of modern navigation and communication technology. The next 25 years undoubtedly will see a pervasive expansion of PTTI into the infrastructure that supports and leverages industrial, social, environmental, defense, and even individual human activities. Speculation as to what capabilities, services, and personal conveniences may become available will be limited by two factors: the degree to which existing device concepts can be made more affordable and reliable, and the ability to miniaturize for purposes of compatibility with electronic integration. With regard to the latter, history teaches us that the required technological breakthrough is unlikely to originate in existing technology; thus, we may expect a paradigm shift in PTTI device concepts not unlike the shift in the 1960s from vacuum tubes to semiconductors.

Steering of quantum waves: Demonstration of Y-junction transistors using InAs quantum wires

NASA Astrophysics Data System (ADS)

Jones, Gregory M.; Qin, Jie; Yang, Chia-Hung; Yang, Ming-Jey

2005-06-01

In this paper we demonstrate using an InAs quantum wire Y-branch switch that the electron wave can be switched to exit from the two drains by a lateral gate bias. The gating modifies the electron wave functions as well as their interference pattern, causing the anti-correlated, oscillatory transconductances. Our result suggests a new transistor function in a multiple-lead ballistic quantum wire system.

Specifying and calibrating instrumentations for wideband electronic power measurements. [in switching circuits

NASA Technical Reports Server (NTRS)

Lesco, D. J.; Weikle, D. H.

1980-01-01

The wideband electric power measurement related topics of electronic wattmeter calibration and specification are discussed. Tested calibration techniques are described in detail. Analytical methods used to determine the bandwidth requirements of instrumentation for switching circuit waveforms are presented and illustrated with examples from electric vehicle type applications. Analog multiplier wattmeters, digital wattmeters and calculating digital oscilloscopes are compared. The instrumentation characteristics which are critical to accurate wideband power measurement are described.

Laser based analysis using a passively Q-switched laser employing analysis electronics and a means for detecting atomic optical emission of the laser media

DOEpatents

Woodruff, Steven D.; Mcintyre, Dustin L.

2016-03-29

A device for Laser based Analysis using a Passively Q-Switched Laser comprising an optical pumping source optically connected to a laser media. The laser media and a Q-switch are positioned between and optically connected to a high reflectivity mirror (HR) and an output coupler (OC) along an optical axis. The output coupler (OC) is optically connected to the output lens along the optical axis. A means for detecting atomic optical emission comprises a filter and a light detector. The optical filter is optically connected to the laser media and the optical detector. A control system is connected to the optical detector and the analysis electronics. The analysis electronics are optically connected to the output lens. The detection of the large scale laser output production triggers the control system to initiate the precise timing and data collection from the detector and analysis.

Negative differential resistance and switch behavior of T-BxNy (x, y = 5, 6, 11) molecular junctions

NASA Astrophysics Data System (ADS)

Wang, Shi-Liang; Yang, Chuan-Lu; Wang, Mei-Shan; Ma, Xiao-Guang; Xin, Jian-Guo

2017-05-01

The electronic transport properties of T-BxNy (x, y = 5, 6, 11) molecular junction are investigated based on first-principle density functional theory and non-equilibrium Green's function method. Strong negative differential resistance (NDR) behavior is observed for T-B5N6 molecule under negative and positive bias voltages, with an obvious switch effect for T-B6N5. However, only small NDR is shown for the complex of the two molecules. The projected device density of states, the spatial distribution of molecular orbitals, and the effect of transmission spectra under various bias voltages on the electronic transport properties are analyzed. The obvious effect of bias voltage on the changes in the electronic distribution of frontier molecular orbitals is responsible for the NDR or switch behavior. Therefore, different functional molecular devices can be obtained with different structures of T-BxNy.

A Passively Q-Switched, CW-Pumped Fe:ZnSe Laser

DTIC Science & Technology

2014-03-01

passively Q-switched microchip lasers using semiconductor saturable absorbers,” J. Opt. Soc. Amer. B, Opt. Phys., vol. 16, no. 3, pp. 376–388, Mar. 1999...204 IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 50, NO. 3, MARCH 2014 A Passively Q-Switched, CW-Pumped Fe:ZnSe Laser Jonathan W. Evans, Patrick A...Berry, and Kenneth L. Schepler Abstract— We report the demonstration of high-average-power passively Q-switched laser oscillation from Fe2+ ions in zinc

Restrike Particle Beam Experiments on a Dense Plasma Focus. Opening Switch Research on a Dense Plasma Focus.

DTIC Science & Technology

1985-06-01

Research on this grant has focused on plasma focus experiments in the areas of particle beam generation and as a potential repetitive opening switch...as were scaling laws for the increase of electron energy and current with input energy. The potential of the plasma focus as an opening switch was...delay line technique. The observed frequencies were most consistent with the lower hybrid frequency. Keywords include: Dense Plasma Focus , Particle Beam Generation, Opening Switch, Load Experiments, Pulsed Power.

Molecular engineering and measurements to test hypothesized mechanisms in single molecule conductance switching.

PubMed

Moore, Amanda M; Dameron, Arrelaine A; Mantooth, Brent A; Smith, Rachel K; Fuchs, Daniel J; Ciszek, Jacob W; Maya, Francisco; Yao, Yuxing; Tour, James M; Weiss, Paul S

2006-02-15

Six customized phenylene-ethynylene-based oligomers have been studied for their electronic properties using scanning tunneling microscopy to test hypothesized mechanisms of stochastic conductance switching. Previously suggested mechanisms include functional group reduction, functional group rotation, backbone ring rotation, neighboring molecule interactions, bond fluctuations, and hybridization changes. Here, we test these hypotheses experimentally by varying the molecular designs of the switches; the ability of the molecules to switch via each hypothetical mechanism is selectively engineered into or out of each molecule. We conclude that hybridization changes at the molecule-surface interface are responsible for the switching we observe.

Note: Cryogenic heat switch with stepper motor actuator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Melcher, B. S., E-mail: bsmelche@syr.edu; Timbie, P. T., E-mail: pttimbie@wisc.edu

2015-12-15

A mechanical cryogenic heat switch has been developed using a commercially available stepper motor and control electronics. The motor requires 4 leads, each carrying a maximum, pulsed current of 0.5 A. With slight modifications of the stepper motor, the switch functions reliably in vacuum at temperatures between 300 K and 4 K. The switch generates a clamping force of 262 N at room temperature. At 4 K it achieves an “on state” thermal conductance of 5.04 mW/K and no conductance in the “off state.” The switch is optimized for cycling an adiabatic demagnetization refrigerator.

Autonomic responses to correct outcomes and interaction errors during single-switch scanning among children with severe spastic quadriplegic cerebral palsy.

PubMed

Leung, Brian; Chau, Tom

2014-03-08

The combination of single-switch access technology and scanning is the most promising means of augmentative and alternative communication for many children with severe physical disabilities. However, the physical impairment of the child and the technology's limited ability to interpret the child's intentions often lead to false positives and negatives (corresponding to accidental and missed selections, respectively) occurring at rates that frustrate the user and preclude functional communication. Multiple psychophysiological studies have associated cardiac deceleration and increased phasic electrodermal activity with self-realization of errors among able-bodied individuals. Thus, physiological measurements have potential utility at enhancing single-switch access, provided that such prototypical autonomic responses exist in persons with profound disabilities. The present case series investigated the autonomic responses of three pediatric single-switch users with severe spastic quadriplegic cerebral palsy, in the context of a single-switch letter matching activity. Each participant exhibited distinct autonomic responses to activity engagement. Our analysis confirmed the presence of the autonomic response pattern of cardiac deceleration and increased phasic electrodermal activity following true positives, false positives and false negatives errors, but not subsequent to true negative outcomes. These findings suggest that there may be merit in complementing single-switch input with autonomic measurements to improve augmentative and alternative communications for pediatric access technology users.

Abnormal bipolar resistive switching behavior in a Pt/GaO{sub 1.3}/Pt structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guo, D. Y.; Wu, Z. P.; Zhang, L. J.

2015-07-20

A stable and repeatable abnormal bipolar resistive switching behavior was observed in a Pt/GaO{sub 1.3}/Pt sandwich structure without an electroforming process. The low resistance state (LRS) and the high resistance state (HRS) of the device can be distinguished clearly and be switched reversibly under a train of the voltage pulses. The LRS exhibits a conduction of electron tunneling, while the HRS shows a conduction of Schottky-type. The observed phenomena are considered to be related to the migration of oxygen vacancies which changes the space charge region width of the metal/semiconductor interface and results in a different electron transport mechanism.

High Voltage, Fast-Switching Module for Active Control of Magnetic Fields and Edge Plasma Currents

NASA Astrophysics Data System (ADS)

Ziemba, Timothy; Miller, Kenneth; Prager, James; Slobodov, Ilia

2016-10-01

Fast, reliable, real-time control of plasma is critical to the success of magnetic fusion science. High voltage and current supplies are needed to mitigate instabilities in all experiments as well as disruption events in large scale tokamaks for steady-state operation. Silicon carbide (SiC) MOSFETs offer many advantages over IGBTs including lower drive energy requirements, lower conduction and switching losses, and higher switching frequency capabilities; however, these devices are limited to 1.2-1.7 kV devices. As fusion enters the long-pulse and burning plasma eras, efficiency of power switching will be important. Eagle Harbor Technologies (EHT), Inc. developing a high voltage SiC MOSFET module that operates at 10 kV. This switch module utilizes EHT gate drive technology, which has demonstrated the ability to increase SiC MOSFET switching efficiency. The module will allow more rapid development of high voltage switching power supplies at lower cost necessary for the next generation of fast plasma feedback and control. EHT is partnering with the High Beta Tokamak group at Columbia to develop detailed high voltage module specifications, to ensure that the final product meets the needs of the fusion science community.

Mobile based Appliances switching using Bluetooth

NASA Astrophysics Data System (ADS)

Gupta, Sureshchandra J., Dr; Desai, Kalp; Gaikawad, Deepak; Pawar, Vijay N.; Gangal, Devendranath R.

2008-04-01

How many times do you have to get up from your desk to switch on your Air conditioner or fan when you are completely into your table work? How many times do you feel lazy to get off your comfort to switch on/off your home appliances in different rooms? How much energy do you lose in a day for operating your appliances? The solution is either a large amount of manual work—or the idea that is presented over here: APP-CON (APP-CON stands for appliances control). Here the ordinary cell phone with bluetooth capability acts as remote designed in such a manner that it acts as a helping hand to human by reducing its manual work and therefore saving human energy. The cell phone control of APP-CON units lets you access many of your home appliances situated in different rooms by using just a single remote from distance. Electronics hobbyists would love to make such a remote control themselves. But they find it difficult due to complex circuitry rather than the high cost because of using a number of frequency counting techniques and decade counters. The APP-CON system given here overcomes the aforesaid problems by using a single microcontroller and moreover a simple program or software for bluetooth enabled cell phone and employing simple coding and decoding of remote signals. Here the mobile based remote control is used to operate a number of home appliances basically consists of Bluetooth technology. The unit consists of a transmitter and a receiver consisting of a microcontroller. The importance of bluetooth technology is that the signal to be transmitted from transmitter to the receiver is done without requiring line of sight.

A Magnetoresistive Heat Switch for the Continuous ADR

NASA Technical Reports Server (NTRS)

Canavan, E. R.; Dipirro, M. J.; Jackson, M.; Panek, J.; Shirron, P. J.; Tuttle, J. G.; Krebs, C. (Technical Monitor)

2001-01-01

In compensated elemental metals at low temperature, a several Tesla field can suppress electronic heat conduction so thoroughly that heat is effectively carried by phonons alone. In approximately one mm diameter single crystal samples with impurity concentrations low enough that electron conduction is limited by surface scattering, the ratio of zerofield to high-field thermal conductivity can exceed ten thousand. We have used this phenomenon to build a compact, solid-state heat switch with no moving parts and no enclosed fluids. The time scale for switching states is limited by time scale for charging the magnet that supplies the controlling field. Our design and fabrication techniques overcome the difficulties associated with manufacturing and assembling parts from single crystal tungsten. A clear disadvantage of the magnetoresistive switch is the mass and complexity of the magnet system for the controlling field. We have discovered a technique of minimizing this mass and complexity, applicable to the continuous adiabatic demagnetization refrigerator.

Lidar Electro-Optic Beam Switch with a Liquid Crystal Variable Retarder

NASA Technical Reports Server (NTRS)

Baer, James

2012-01-01

A document discusses a liquid crystal variable retarder, an electro-optic element that changes the polarization of an optical beam in response to a low-voltage electronic signal. This device can be fabricated so that the element creates, among other states, a half-wave of retardance that can be reduced to a very small retardance. When aligned to a polarized source, this can act to rotate the polarization by 90 in one state, but generate no rotation in the other state. If the beam is then incident on a polarization beam splitter, it will efficiently switch from one path to the other when the voltage is applied. The laser beam switching system has no moving parts, improving reliability over mechanical switching. It is low cost, tolerant of high laser power density, and needs only simple drive electronics, minimizing the required system resources.

Laser activated diffuse discharge switch

DOEpatents

Christophorou, Loucas G.; Hunter, Scott R.

1988-01-01

The invention is a gas mixture for a diffuse discharge switch which is capable of changing from a conducting state to an insulating state in the presence of electrons upon the introduction of laser light. The mixture is composed of a buffer gas such as nitrogen or argon and an electron attaching gas such as C.sub.6 H.sub.5 SH, C.sub.6 H.sub.5 SCH.sub.3, CH.sub.3 CHO and CF.sub.3 CHO wherein the electron attachment is brought on by indirect excitation of molecules to long-lived states by exposure to laser light.

Electron tunnelling through single azurin molecules can be on/off switched by voltage pulses

NASA Astrophysics Data System (ADS)

Baldacchini, Chiara; Kumar, Vivek; Bizzarri, Anna Rita; Cannistraro, Salvatore

2015-05-01

Redox metalloproteins are emerging as promising candidates for future bio-optoelectronic and nano-biomemory devices, and the control of their electron transfer properties through external signals is still a crucial task. Here, we show that a reversible on/off switching of the electron current tunnelling through a single protein can be achieved in azurin protein molecules adsorbed on gold surfaces, by applying appropriate voltage pulses through a scanning tunnelling microscope tip. The observed changes in the hybrid system tunnelling properties are discussed in terms of long-sustained charging of the protein milieu.

Thermal Control Using Liquid-Metal Bridge Switches

NASA Technical Reports Server (NTRS)

Hirsa, Amir H.; Olles, Joseph; Tilger, Christopher

2013-01-01

A short term effort (3-months) was undertaken to demonstrate the feasibility of a novel method to locally control the heat transfer rate and demonstrate the potential to achieve a turndown ratio of approximately 10:1. The technology had to be demonstrated to be at a TRL of 2-3, with a plan to advance it to a TRL 5-6. Here, we show that the concept recently developed in our laboratory, namely the pinned-contact, double droplet switch made by overfilling a hole drilled in a suitable substrate can be implemented with a low-melting temperature metal. When toggled near a second substrate, a liquid bridge can be reversibly connected or disconnected, on demand. We have shown experimentally that liquid-metal bridge switches can be made from gallium with a suitable choice of substrate materials, activation strategies, and control techniques. Individual as well as arrays of gallium bridge switches were shown to be feasible and can be robustly controlled. The very short response time of the bridge connection and disconnection (on the order of 1 millisecond) provides for utility in a wide range of applications. The liquid bridge switches may be controlled actively or passively. We have shown through computations and analysis that liquid bridge switches provide locally large turndown ratios (on the order of 103:1), so a relatively sparse packing of them would be needed to obtain the desired turndown ratio of 10:1. For the laboratory demonstrations, pressure activation was utilized. Simple designs for a passive control strategy are presented which are highly attractive for several reasons, including i) large turndown ratio, ii) no solid-moving parts, and iii) stable operation. Finally, we note that passive systems do not require any electronics for their control. This along with the relatively small molecular weight of candidate materials for the system, makes for a robust design outside of Earth?s magnetic field, where spacecraft are subject to significant radiation bombardment.

A solid-state dielectric elastomer switch for soft logic

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chau, Nixon; Slipher, Geoffrey A., E-mail: geoffrey.a.slipher.civ@mail.mil; Mrozek, Randy A.

In this paper, we describe a stretchable solid-state electronic switching material that operates at high voltage potentials, as well as a switch material benchmarking technique that utilizes a modular dielectric elastomer (artificial muscle) ring oscillator. The solid-state switching material was integrated into our oscillator, which self-started after 16 s and performed 5 oscillations at a frequency of 1.05 Hz with 3.25 kV DC input. Our materials-by-design approach for the nickel filled polydimethylsiloxane based switch has resulted in significant improvements over previous carbon grease-based switches in four key areas, namely, sharpness of switching behavior upon applied stretch, magnitude of electrical resistance change, ease ofmore » manufacture, and production rate. Switch lifetime was demonstrated to be in the range of tens to hundreds of cycles with the current process. An interesting and potentially useful strain-based switching hysteresis behavior is also presented.« less

A single-stage optical load-balanced switch for data centers.

PubMed

Huang, Qirui; Yeo, Yong-Kee; Zhou, Luying

2012-10-22

Load balancing is an attractive technique to achieve maximum throughput and optimal resource utilization in large-scale switching systems. However current electronic load-balanced switches suffer from severe problems in implementation cost, power consumption and scaling. To overcome these problems, in this paper we propose a single-stage optical load-balanced switch architecture based on an arrayed waveguide grating router (AWGR) in conjunction with fast tunable lasers. By reuse of the fast tunable lasers, the switch achieves both functions of load balancing and switching through the AWGR. With this architecture, proof-of-concept experiments have been conducted to investigate the feasibility of the optical load-balanced switch and to examine its physical performance. Compared to three-stage load-balanced switches, the reported switch needs only half of optical devices such as tunable lasers and AWGRs, which can provide a cost-effective solution for future data centers.

Reversible solvatomagnetic switching in a single-ion magnet from an entatic state† †Electronic supplementary information (ESI) available: Preparation methods and physical characterization data. Crystallographic refinement and computational details. Additional figures (Fig. S1–S12) and tables (Tables S1–S5). CCDC 952077 and 938463. For ESI and crystallographic data in CIF or other electronic format see DOI: 10.1039/c6sc05188j Click here for additional data file. Click here for additional data file.

PubMed Central

Vallejo, J.; Viciano-Chumillas, M.; Castro, I.; Amorós, P.; Déniz, M.; Ruiz-Pérez, C.; Yuste-Vivas, C.; Krzystek, J.; Julve, M.; Lloret, F.

2017-01-01

A vast impact on molecular nanoscience can be achieved using simple transition metal complexes as dynamic chemical systems to perform specific and selective tasks under the control of an external stimulus that switches “ON” and “OFF” their electronic properties. While the interest in single-ion magnets (SIMs) lies in their potential applications in information storage and quantum computing, the switching of their slow magnetic relaxation associated with host–guest processes is insufficiently explored. Herein, we report a unique example of a mononuclear cobalt(ii) complex in which geometrical constraints are the cause of easy and reversible water coordination and its release. As a result, a reversible and selective colour and SIM behaviour switch occurs between a “slow-relaxing” deep red anhydrous material (compound 1) and its “fast-relaxing” orange hydrated form (compound 2). The combination of this optical and magnetic switching in this new class of vapochromic and thermochromic SIMs offers fascinating possibilities for designing multifunctional molecular materials. PMID:28580105

Ames Lab 101: Ultrafast Magnetic Switching

ScienceCinema

Wang; Jigang

2018-01-01

Ames Laboratory physicists have found a new way to switch magnetism that is at least 1000 times faster than currently used in magnetic memory technologies. Magnetic switching is used to encode information in hard drives, magnetic random access memory and other computing devices. The discovery potentially opens the door to terahertz and faster memory speeds.

Asynchronous transfer mode distribution network by use of an optoelectronic VLSI switching chip.

PubMed

Lentine, A L; Reiley, D J; Novotny, R A; Morrison, R L; Sasian, J M; Beckman, M G; Buchholz, D B; Hinterlong, S J; Cloonan, T J; Richards, G W; McCormick, F B

1997-03-10

We describe a new optoelectronic switching system demonstration that implements part of the distribution fabric for a large asynchronous transfer mode (ATM) switch. The system uses a single optoelectronic VLSI modulator-based switching chip with more than 4000 optical input-outputs. The optical system images the input fibers from a two-dimensional fiber bundle onto this chip. A new optomechanical design allows the system to be mounted in a standard electronic equipment frame. A large section of the switch was operated as a 208-Mbits/s time-multiplexed space switch, which can serve as part of an ATM switch by use of an appropriate out-of-band controller. A larger section with 896 input light beams and 256 output beams was operated at 160 Mbits/s as a slowly reconfigurable space switch.

New Modulation Method and Control Strategies for Power Electronics Inverters

NASA Astrophysics Data System (ADS)

Aleenejad, Mohsen

The DC to AC power Converters (so-called Inverters) are widely used in industrial applications. The MLIs are becoming increasingly popular in industrial apparatus aimed at medium to high power conversion applications. In comparison to the conventional inverters, they feature superior characteristics such as lower total harmonic distortion (THD), higher efficiency, and lower switching voltage stress. Nevertheless, the superior characteristics come at the price of a more complex topology with an increased number of power electronic switches. The increased number of power electronics switches results in more complicated control strategies for the inverter. Moreover, as the number of power electronic switches increases, the chances of fault occurrence of the switches increases, and thus the inverter's reliability decreases. Due to the extreme monetary ramifications of the interruption of operation in commercial and industrial applications, high reliability for power inverters utilized in these sectors is critical. As a result, developing simple control strategies for normal and fault-tolerant operation of MLIs has always been an interesting topic for researchers in related areas. The purpose of this dissertation is to develop new control and fault-tolerant strategies for the multilevel power inverter. For the normal operation of the inverter, a new high switching frequency technique is developed. The proposed method extends the utilization of the dc link voltage while minimizing the dv/dt of the switches. In the event of a fault, the line voltages of the faulty inverters are unbalanced and cannot be applied to the 3-phase loads. For the faulty condition of the inverter, three novel fault-tolerant techniques are developed. The proposed fault-tolerant strategies generate balanced line voltages without bypassing any healthy and operative inverter element, makes better use of the inverter capacity and generates higher output voltage. These strategies exploit the advantages of the Selective Harmonic Elimination (SHE) and Space Vector Modulation (SVM) methods in conjunction with a slightly modified Fundamental Phase Shift Compensation (FPSC) technique to generate balanced voltages and manipulate voltage harmonics at the same time. The proposed strategies are applicable to several classes of MLIs with three or more voltage levels.

Fringe field switching AMLCD technology in military and consumer applications

NASA Astrophysics Data System (ADS)

Niemczyk, James

2006-05-01

American Panel Corporation (APC) designs and delivers customized AMLCD products for aircraft cockpits and rugged ground vehicles. APC specifies AMLCD's to be designed and manufactured, based on an exclusive relationship, with both LG.Philips LCD, in South Korea and BOE Hydis, in South Korea. This paper addresses the Fringe Field Switching (FFS) technology developed by BOE Hydis and APC's customization of this technology into both high end avionics display products as well as consumer display products. FFS technology optimizes all optical and electrical performance qualities into a single product. APC offers the high temperature FFS products for all applications.

Physics Notes.

ERIC Educational Resources Information Center

School Science Review, 1983

1983-01-01

Presented are physics experiments, laboratory procedures, demonstrations, and classroom materials/activities. Experiments include: speed of sound in carbon dioxide; inverse square law; superluminal velocities; and others. Equipment includes: current switch; electronic switch; and pinhole camera. Discussion of mechanics of walking is also included.…

Integrated DoD Voice and Data Networks and Ground Packet Radio Technology

DTIC Science & Technology

1976-08-01

as the traffic requirement level increases. Moreover, the satellite switch selection problem is only meaningful over a limited traffic range. When...5: CPU TIMES VS. NUMBER OF SWITCHES SATELLITE SWITCH SELECTION ALGORITHM Computer Used: PDP-10 ♦O’S" means 0 minutes and 5 seconds. 5.30...Saturation Algorithm for Topo\\ogical Design of Parket-Switched Communications Networks," National Te3 ecommunications Conference Proceed- ings, San

Direct Laser Writing-Based Programmable Transfer Printing via Bioinspired Shape Memory Reversible Adhesive.

PubMed

Huang, Yin; Zheng, Ning; Cheng, Zhiqiang; Chen, Ying; Lu, Bingwei; Xie, Tao; Feng, Xue

2016-12-28

Flexible and stretchable electronics offer a wide range of unprecedented opportunities beyond conventional rigid electronics. Despite their vast promise, a significant bottleneck lies in the availability of a transfer printing technique to manufacture such devices in a highly controllable and scalable manner. Current technologies usually rely on manual stick-and-place and do not offer feasible mechanisms for precise and quantitative process control, especially when scalability is taken into account. Here, we demonstrate a spatioselective and programmable transfer strategy to print electronic microelements onto a soft substrate. The method takes advantage of automated direct laser writing to trigger localized heating of a micropatterned shape memory polymer adhesive stamp, allowing highly controlled and spatioselective switching of the interfacial adhesion. This, coupled to the proper tuning of the stamp properties, enables printing with perfect yield. The wide range adhesion switchability further allows printing of hybrid electronic elements, which is otherwise challenging given the complex interfacial manipulation involved. Our temperature-controlled transfer printing technique shows its critical importance and obvious advantages in the potential scale-up of device manufacturing. Our strategy opens a route to manufacturing flexible electronics with exceptional versatility and potential scalability.

Design and Operation of a Two-Color Interferometer to Measure Plasma and Neutral Gas Densities in a Laser-Triggered Spark Gap Switch

NASA Astrophysics Data System (ADS)

Camacho, J. F.; Ruden, E. L.; Domonkos, M. T.; Schmitt-Sody, A.; Lucero, A.

2014-10-01

A Mach-Zehnder imaging interferometer, operating with 1064-nm and 532-nm wavelength beams from a short-pulse laser and a frequency-doubled branch, respectively, has been designed and built to simultaneously measure plasma free electron and neutral gas densities profiles within a laser-triggered spark gap switch with a 5-mm gap. The switch will be triggered by focusing a separate 532-nm or 1064-nm laser pulse along the gap's axis to trigger low-jitter breakdown. Illuminating the gap transverse to this axis, the diagnostic will generate interferograms for each wavelength, which will then be numerically converted to phase-shift maps. These will be used to calculate independent line-integrated free electron and neutral density profiles by exploiting their different frequency dispersion curves. The density profiles themselves, then, will be calculated by Abel inversion. Details of the interferometer's design will be presented along with density data obtained using a variety of fill gasses at various pressures. Other switch parameters will be varied as well in order to characterize more fully the performance of the switch.

Analytically derived switching functions for exact H2+ eigenstates

NASA Astrophysics Data System (ADS)

Thorson, W. R.; Kimura, M.; Choi, J. H.; Knudson, S. K.

1981-10-01

Electron translation factors (ETF's) appropriate for slow atomic collisions may be constructed using switching functions. In this paper we derive a set of switching functions for the H2+ system by an analytical "two-center decomposition" of the exact molecular eigenstates. These switching functions are closely approximated by the simple form f=bη, where η is the "angle variable" of prolate spheroidal coordinates. For given united atom angular momentum quantum numbers (l,m), the characteristic parameter blm depends only on the quantity c2=-ɛR22, where ɛ is the electronic binding energy and R the internuclear distance in a.u. The resulting parameters are in excellent agreement with those found in our earlier work by a heuristic "optimization" scheme based on a study of coupling matrix-element behavior for a number of H2+ states. An approximate extension to asymmetric cases (HeH2+) has also been made. Nonadiabatic couplings based on these switching functions have been used in recent close-coupling calculations for H+-H(1s) collisions and He2+-H(1s) collisions at energies 1.0-20 keV.

Polymer thick-film conductors and dielectrics for membrane switches and flexible circuitry

NASA Technical Reports Server (NTRS)

Nazarenko, N.

1983-01-01

The fabrication and operation of membrane switches are discussed. The membrane switch functions as a normally open, momentary contact, low-voltage pressure-sensitive device. Its design is a three-layer sandwich usually constructed of polyester film. Conductive patterns are deposited onto the inner side of top and bottom sheets by silk screening. The center spacer is then placed between the two circuit layers to form a sandwich, generally held together by an adhesive. When pressure is applied to the top layer, it flexes through the punched openings of the spacer to establish electrical contact between conductive pads of the upper and lower sheets, momentarily closing the circuit. Upon release of force the top sheet springs back to its normal open position. The membrane touch switch is being used in a rapidly expanding range of applications, including instrumentation, appliances, electronic games and keyboards. Its board acceptance results from its low cost, durability, ease of manufacture, cosmetic appeal and design flexibility. The principal electronic components in the membrane switch are the conductor and dielectric.

An Electron-Beam Controlled Semiconductor Switch

DTIC Science & Technology

1989-11-01

of the Seventeenth Power Modulator Symposium, Seattle, WA, pp. 214-218. 1986. 21. Bovino , L., ’ioumans,R., Weiner, H., Burke, T . , "Optica lly... Bovino , R. Youmans, M. Weiner, and T. Burke, ’ ’Optically Co ntrolled Semiconducto r Switch for ~lulti-~legawatt Rep-Rated Pulse r s ," Conf. Record...p. 615. (II 1 W. N. Carr, IEEE Trans. Electron Devices, vol. ED-12, p. 531 , 1965. (121 T. Burke, M. Weiner. L. Bovino , and R. Youmans, in Proc

Introduction of Electronic Pressure Scanning at the Royal Aerospace Establishment

DTIC Science & Technology

1991-09-01

electronic pressure scanning system could offer an acciracy the same as or better than that of the mechanical pressure switch system it would replace and...described it as comparable with the kind of problem encountered with pressures in a rotating pressure switch system and suggested two ways around the...sufficient to reduce the system random noise to less than the systematic errors for data from the surface of a pressure plotted model A mechanical pressure

Application and development of ion-source technology for radiation-effects testing of electronics

NASA Astrophysics Data System (ADS)

Kalvas, T.; Javanainen, A.; Kettunen, H.; Koivisto, H.; Tarvainen, O.; Virtanen, A.

2017-09-01

Studies of heavy-ion induced single event effect (SEE) on space electronics are necessary to verify the operation of the components in the harsh radiation environment. These studies are conducted by using high-energy heavy-ion beams to simulate the radiation effects in space. The ion beams are accelerated as so-called ion cocktails, containing several ion beam species with similar mass-to-charge ratio, covering a wide range of linear energy transfer (LET) values also present in space. The use of cocktails enables fast switching between beam species during testing. Production of these high-energy ion cocktails poses challenging requirements to the ion sources because in most laboratories reaching the necessary beam energies requires very high charge state ions. There are two main technologies producing these beams: The electron beam ion source EBIS and the electron cyclotron resonance ion source ECRIS. The EBIS is most suitable for pulsed accelerators, while ECRIS is most suitable for use with cyclotrons, which are the most common accelerators used in these applications. At the Accelerator Laboratory of the University of Jyväskylä (JYFL), radiation effects testing is currently performed using a K130 cyclotron and a 14 GHz ECRIS at a beam energy of 9.3 MeV/u. A new 18 GHz ECRIS, pushing the limits of the normal conducting ECR technology is under development at JYFL. The performances of existing 18 GHz ion sources have been compared, and based on this analysis, a 16.2 MeV/u beam cocktail with 1999 MeV 126Xe44+ being the most challenging component to has been chosen for development at JYFL. The properties of the suggested beam cocktail are introduced and discussed.

The effect of doping Sb on the electronic structure and the device characteristics of Ovonic Threshold Switches based on Ge-Se

PubMed Central

Shin, Sang-Yeol; Choi, J. M.; Seo, Juhee; Ahn, Hyung-Woo; Choi, Yong Gyu; Cheong, Byung-ki; Lee, Suyoun

2014-01-01

The Ovonic Threshold Switch (OTS) based on an amorphous chalcogenide material has attracted much interest as a promising candidate for a high-performance thin-film switching device enabling 3D-stacking of memory devices. In this work, we studied on the electronic structure of amorphous Sb-doped Ge0.6Se0.4 (in atomic mole fraction) film and its characteristics as to OTS devices. From the optical absorption spectroscopy measurement, the band gap (Eg) was found to decrease with increasing Sb content. In addition, as Sb content increased, the activation energy (Ea) for electrical conduction was found to decrease down to about one third of Eg from a half. As to the device characteristics, we found that the threshold switching voltage (Vth) drastically decreased with the Sb content. These results, being accountable in terms of the changes in the bonding configuration of constituent atoms as well as in the electronic structure such as the energy gap and trap states, advance an effective method of compositional adjustment to modulate Vth of an OTS device for various applications. PMID:25403772

Pulse width modulation inverter with battery charger

DOEpatents

Slicker, James M.

1985-01-01

An inverter is connected between a source of DC power and a three-phase AC induction motor, and a microprocessor-based circuit controls the inverter using pulse width modulation techniques. In the disclosed method of pulse width modulation, both edges of each pulse of a carrier pulse train are equally modulated by a time proportional to sin .theta., where .theta. is the angular displacement of the pulse center at the motor stator frequency from a fixed reference point on the carrier waveform. The carrier waveform frequency is a multiple of the motor stator frequency. The modulated pulse train is then applied to each of the motor phase inputs with respective phase shifts of 120.degree. at the stator frequency. Switching control commands for electronic switches in the inverter are stored in a random access memory (RAM) and the locations of the RAM are successively read out in a cyclic manner, each bit of a given RAM location controlling a respective phase input of the motor. The DC power source preferably comprises rechargeable batteries and all but one of the electronic switches in the inverter can be disabled, the remaining electronic switch being part of a "flyback" DC-DC converter circuit for recharging the battery.

Pulse width modulation inverter with battery charger

NASA Technical Reports Server (NTRS)

Slicker, James M. (Inventor)

1985-01-01

An inverter is connected between a source of DC power and a three-phase AC induction motor, and a microprocessor-based circuit controls the inverter using pulse width modulation techniques. In the disclosed method of pulse width modulation, both edges of each pulse of a carrier pulse train are equally modulated by a time proportional to sin .theta., where .theta. is the angular displacement of the pulse center at the motor stator frequency from a fixed reference point on the carrier waveform. The carrier waveform frequency is a multiple of the motor stator frequency. The modulated pulse train is then applied to each of the motor phase inputs with respective phase shifts of 120.degree. at the stator frequency. Switching control commands for electronic switches in the inverter are stored in a random access memory (RAM) and the locations of the RAM are successively read out in a cyclic manner, each bit of a given RAM location controlling a respective phase input of the motor. The DC power source preferably comprises rechargeable batteries and all but one of the electronic switches in the inverter can be disabled, the remaining electronic switch being part of a flyback DC-DC converter circuit for recharging the battery.

Thermal annealing and transient electronic excitations induced interfacial and magnetic effects on Pt/Co/Pt trilayer

NASA Astrophysics Data System (ADS)

Sehdev, Neeru; Medwal, Rohit; Malik, Rakesh; Kandasami, Asokan; Kanjilal, Dinakar; Annapoorni, S.

2018-04-01

Present study investigates the importance of thermal annealing and transient electronic excitations (using 100 MeV oxygen ions) in assisting the interfacial atomic diffusion, alloy composition, and magnetic switching field distributions in Pt/Co/Pt stacked trilayer. X-ray diffraction analysis reveals that thermal annealing results in the formation of the face centered tetragonal L1°CoPt phase. The Rutherford back scattering spectra shows a trilayer structure for as-deposited and as-irradiated films. Interlayer mixing on the thermally annealed films further improves by electronic excitations produced by high energy ion irradiation. Magnetically hard face centered tetragonal CoPt alloy retains its hard phase after ion irradiation and reveals an enhancement in the structural ordering and magnetic stability. Enhancement in the homogeneity of alloy composition and its correlation with the magnetic switching field is evident from this study. A detailed investigation of the contributing parameters shows that the magnetic switching behaviour varies with the type of thermal annealing, transient electronic excitations of ion beams and combination of these processes.

Molecular quantum cellular automata cell design trade-offs: latching vs. power dissipation.

PubMed

Rahimi, Ehsan; Reimers, Jeffrey R

2018-06-20

The use of molecules to enact quantum cellular automata (QCA) cells has been proposed as a new way for performing electronic logic operations at sub-nm dimensions. A key question that arises concerns whether chemical or physical processes are to be exploited. The use of chemical reactions allows the state of a switch element to be latched in molecular form, making the output of a cell independent of its inputs, but costs energy to do the reaction. Alternatively, if purely electronic polarization is manipulated then no internal latching occurs, but no power is dissipated provided the fields from the inputs change slowly compared to the molecular response times. How these scenarios pan out is discussed by considering calculated properties of the 1,4-diallylbutane cation, a species often used as a paradigm for molecular electronic switching. Utilized are results from different calculation approaches that depict the ion either as a charge-localized mixed-valence compound functioning as a bistable switch, or else as an extremely polarizable molecule with a delocalized electronic structure. Practical schemes for using molecular cells in QCA and other devices emerge.

Low threshold all-optical crossbar switch on GaAs-GaAlAs channel waveguide arrays

NASA Astrophysics Data System (ADS)

Jannson, Tomasz; Kostrzewski, Andrew

1994-09-01

During the Phase 2 project entitled 'Low Threshold All-Optical Crossbar Switch on GaAs - GaAlAs Channel Waveguide Array,' Physical Optics Corporation (POC) developed the basic principles for the fabrication of all-optical crossbar switches. Based on this development. POC fabricated a 2 x 2 GaAs/GaAlAs switch that changes the direction of incident light with minimum insertion loss and nonlinear distortion. This unique technology can be used in both analog and digital networks. The applications of this technology are widespread. Because the all-optical network does not have any speed limitations (RC time constant), POC's approach will be beneficial to SONET networks, phased array radar networks, very high speed oscilloscopes, all-optical networks, IR countermeasure systems, BER equipment, and the fast growing video conferencing network market. The novel all-optical crossbar switch developed in this program will solve interconnect problems. and will be a key component in the widely proposed all-optical 200 Gb/s SONET/ATM networks.

Application of Electron-Beam Controlled Diffuse Discharges to Fast Switching

DTIC Science & Technology

1983-06-01

pressure , switch area and length are estimated self-consistently for a given system efficiency is reviewed, The formalism is used to design a single pulse, 200 kV, 30 kA (6 omega) , 100 ns FWHM inductive storage generator.

pH-controlled silicon nanowires fluorescence switch

NASA Astrophysics Data System (ADS)

Mu, Lixuan; Shi, Wensheng; Zhang, Taiping; Zhang, Hongyan; She, Guangwei

2010-08-01

Covalently immobilizing photoinduced electronic transfer (PET) fluorophore 3-[N, N-bis(9-anthrylmethyl)amino]-propyltriethoxysilane (DiAN) on the surface of silicon nanowires (SiNWs) resulted a SiNWs-based fluorescence switch. This fluorescence switch is operated by adjustment of the acidity of the environment and exhibits sensitive response to pH at the range from 8 to 10. Such response is attributed to the effect of pH on the PET process. The successful combination of logic switch and SiNWs provides a rational approach to assemble different logic molecules on SiNWs for realization of miniaturization and modularization of switches and logic devices.

A ZnO nanowire resistive switch

NASA Astrophysics Data System (ADS)

Karthik, K. R. G.; Ramanujam Prabhakar, Rajiv; Hai, L.; Batabyal, Sudip K.; Huang, Y. Z.; Mhaisalkar, S. G.

2013-09-01

An individual ZnO nanowire resistive switch is evaluated with Pt/ZnO nanowire/Pt topology. A detailed DC I-V curve analysis is performed to bring both the conduction mechanism and the device characteristics to light. The device is further studied at various vacuum pressures to ascertain the presence of polar charges in ZnO nanowires as the phenomenon leading to the formation of the switch. The disappearance of the resistive switching is also analyzed with two kinds of fabrication approaches Focused Ion/Electron Beam involved in the making the device and a summary of both length and fabrication dependences of resistive switching in the ZnO nanowire is presented.

Investigation of the environmental implications of the CNT switch through its life cycle

NASA Astrophysics Data System (ADS)

Dahlben, Lindsay Johanna

Carbon nanotubes (CNTs) are unique allotropes of carbon that have high tensile strength, a high Young's modulus, good thermal conductivity, and depending on the CNT chirality can be metallic or semiconducting. These mechanical, thermal, and electrical properties make CNTs an attractive element in electronic applications such as conductive films, photovoltaics, non-volatile memory devices, batteries, sensors, and displays. Although commercialization of CNT-enabled products is increasing, there remains a significant lack of information regarding the health effects and environmental impacts of CNTs. Some studies have even shown that the behavior, toxicity, and persistence of CNTs may differ from bulk heterogeneous carbon. Given these uncertainties, it is prudent to assess the environmental attributes of CNT products and processes now to discover and potentially prevent adverse effects. This study investigates the environmental implications of a non-volatile bi-stable electromechanical CNT switch through its life cycle. Life cycle assessment (LCA) methodology is used to track the environmental impacts of the CNT switch through its fabrication and expected use and end-of-life (EOL) stages. Process parameters, energy consumption, input materials, output emissions, and yield efficiencies are determined for the laboratory and full-scale manufacture environments. The Ecoinvent(TM) inventory database and Eco-indicator 1999(TM) method are utilized for the impact assessment. Results for the fabrication stage are reported for highest contributions to environmental impact such as airborne inorganics, land use, and fossil fuels due to Au refining processes and electricity consumption. Extension of the LCA scope is evaluated for the potential replacement of CNT switches to current field-effect transistors (FETs) in flash memory for a cellular phone application. First-order predictions are made for the functionality and performance of the CNT switch during the use stage through an environmental perspective. Existing cellular phone EOL management options including recycling and direct disposal to landfill and incineration are evaluated for potential limitations, concerns, and environmental releases that may occur from the assimilation of CNT switch-enabled phones into the waste stream. In this manner, potential environmental effects of the CNT switch throughout its life cycle stages can be addressed alongside its technological development to ensure safe, sustainable, and successful CNT products.

HOLLOTRON switch for megawatt lightweight space inverters

NASA Technical Reports Server (NTRS)

Poeschel, R. L.; Goebel, D. M.; Schumacher, R. W.

1991-01-01

The feasibility of satisfying the switching requirements for a megawatt ultralight inverter system using HOLLOTRON switch technology was determined. The existing experimental switch hardware was modified to investigate a coaxial HOLLOTRON switch configuration and the results were compared with those obtained for a modified linear HOLLOTRON configuration. It was concluded that scaling the HOLLOTRON switch to the current and voltage specifications required for a megawatt converter system is indeed feasible using a modified linear configuration. The experimental HOLLOTRON switch operated at parameters comparable to the scaled coaxial HOLLOTRON. However, the linear HOLLOTRON data verified the capability for meeting all the design objectives simultaneously including current density (greater than 2 A/sq cm), voltage (5 kV), switching frequency (20 kHz), switching time (300 ns), and forward voltage drop (less than or equal to 20 V). Scaling relations were determined and a preliminary design was completed for an engineering model linear HOLLOTRON switch to meet the megawatt converter system specifications.

High-power electro-optic switch technology based on novel transparent ceramic

NASA Astrophysics Data System (ADS)

Xue-Jiao, Zhang; Qing, Ye; Rong-Hui, Qu; Hai-wen, Cai

2016-03-01

A novel high-power polarization-independent electro-optic switch technology based on a reciprocal structure Sagnac interferometer and a transparent quadratic electro-optic ceramic is proposed and analyzed theoretically and experimentally. The electro-optic ceramic is used as a phase retarder for the clockwise and counter-clockwise polarized light, and their polarization directions are adjusted to their orthogonal positions by using two half-wave plates. The output light then becomes polarization-independent with respect to the polarization direction of the input light. The switch characteristics, including splitter ratios and polarization states, are theoretically analyzed and simulated in detail by the matrix multiplication method. An experimental setup is built to verify the analysis and experimental results. A new component ceramic is used and a non-polarizing cube beam splitter (NPBS) replaces the beam splitter (BS) to lower the ON/OFF voltage to 305 V and improve the extinction ratio by 2 dB. Finally, the laser-induced damage threshold for the proposed switch is measured and discussed. It is believed that potential applications of this novel polarization-independent electro-optic switch technology will be wide, especially for ultrafast high-power laser systems. Project supported by the National Natural Science Foundation of China (Grant Nos. 61137004, 61405218, and 61535014).

Fabrication of fully transparent nanowire transistors for transparent and flexible electronics

NASA Astrophysics Data System (ADS)

Ju, Sanghyun; Facchetti, Antonio; Xuan, Yi; Liu, Jun; Ishikawa, Fumiaki; Ye, Peide; Zhou, Chongwu; Marks, Tobin J.; Janes, David B.

2007-06-01

The development of optically transparent and mechanically flexible electronic circuitry is an essential step in the effort to develop next-generation display technologies, including `see-through' and conformable products. Nanowire transistors (NWTs) are of particular interest for future display devices because of their high carrier mobilities compared with bulk or thin-film transistors made from the same materials, the prospect of processing at low temperatures compatible with plastic substrates, as well as their optical transparency and inherent mechanical flexibility. Here we report fully transparent In2O3 and ZnO NWTs fabricated on both glass and flexible plastic substrates, exhibiting high-performance n-type transistor characteristics with ~82% optical transparency. These NWTs should be attractive as pixel-switching and driving transistors in active-matrix organic light-emitting diode (AMOLED) displays. The transparency of the entire pixel area should significantly enhance aperture ratio efficiency in active-matrix arrays and thus substantially decrease power consumption.

Fabrication of fully transparent nanowire transistors for transparent and flexible electronics.

PubMed

Ju, Sanghyun; Facchetti, Antonio; Xuan, Yi; Liu, Jun; Ishikawa, Fumiaki; Ye, Peide; Zhou, Chongwu; Marks, Tobin J; Janes, David B

2007-06-01

The development of optically transparent and mechanically flexible electronic circuitry is an essential step in the effort to develop next-generation display technologies, including 'see-through' and conformable products. Nanowire transistors (NWTs) are of particular interest for future display devices because of their high carrier mobilities compared with bulk or thin-film transistors made from the same materials, the prospect of processing at low temperatures compatible with plastic substrates, as well as their optical transparency and inherent mechanical flexibility. Here we report fully transparent In(2)O(3) and ZnO NWTs fabricated on both glass and flexible plastic substrates, exhibiting high-performance n-type transistor characteristics with approximately 82% optical transparency. These NWTs should be attractive as pixel-switching and driving transistors in active-matrix organic light-emitting diode (AMOLED) displays. The transparency of the entire pixel area should significantly enhance aperture ratio efficiency in active-matrix arrays and thus substantially decrease power consumption.

Integrated logic circuits using single-atom transistors

PubMed Central

Mol, J. A.; Verduijn, J.; Levine, R. D.; Remacle, F.

2011-01-01

Scaling down the size of computing circuits is about to reach the limitations imposed by the discrete atomic structure of matter. Reducing the power requirements and thereby dissipation of integrated circuits is also essential. New paradigms are needed to sustain the rate of progress that society has become used to. Single-atom transistors, SATs, cascaded in a circuit are proposed as a promising route that is compatible with existing technology. We demonstrate the use of quantum degrees of freedom to perform logic operations in a complementary-metal–oxide–semiconductor device. Each SAT performs multilevel logic by electrically addressing the electronic states of a dopant atom. A single electron transistor decodes the physical multivalued output into the conventional binary output. A robust scalable circuit of two concatenated full adders is reported, where by utilizing charge and quantum degrees of freedom, the functionality of the transistor is pushed far beyond that of a simple switch. PMID:21808050

A linear 180 nm SOI CMOS antenna switch module using integrated passive device filters for cellular applications

NASA Astrophysics Data System (ADS)

Jie, Cui; Lei, Chen; Peng, Zhao; Xu, Niu; Yi, Liu

2014-06-01

A broadband monolithic linear single pole, eight throw (SP8T) switch has been fabricated in 180 nm thin film silicon-on-insulator (SOI) CMOS technology with a quad-band GSM harmonic filter in integrated passive devices (IPD) technology, which is developed for cellular applications. The antenna switch module (ASM) features 1.2 dB insertion loss with filter on 2G bands and 0.4 dB insertion loss in 3G bands, less than -45 dB isolation and maximum -103 dB intermodulation distortion for mobile front ends by applying distributed architecture and adaptive supply voltage generator.

Monolithic control components for high power mm-waves

NASA Astrophysics Data System (ADS)

Armstrong, A.; Goodrich, J.; Moroney, W.; Wheeler, D.

1985-09-01

Monolithic PIN diode arrays are shown to provide significant advances in switching ratios, bandwidth, and high-power capability for millimeter control applications The PIN diodes are arranged in a series/parallel configuration and form an electronically controlled window for switching RF power by applying DC voltage. At Ka band, an SPST switch using the window array (WINAR) design typically has 0.6 dB insertion loss and 22 dB isolation over the 26.5 to 40.0 GHz band. The switch has over 500 W peak power and 25 W average power capability.

The role of the tunneling matrix element and nuclear reorganization in the design of quantum-dot cellular automata molecules

NASA Astrophysics Data System (ADS)

Henry, Jackson; Blair, Enrique P.

2018-02-01

Mixed-valence molecules provide an implementation for a high-speed, energy-efficient paradigm for classical computing known as quantum-dot cellular automata (QCA). The primitive device in QCA is a cell, a structure with multiple quantum dots and a few mobile charges. A single mixed-valence molecule can function as a cell, with redox centers providing quantum dots. The charge configuration of a molecule encodes binary information, and device switching occurs via intramolecular electron transfer between dots. Arrays of molecular cells adsorbed onto a substrate form QCA logic. Individual cells in the array are coupled locally via the electrostatic electric field. This device networking enables general-purpose computing. Here, a quantum model of a two-dot molecule is built in which the two-state electronic system is coupled to the dominant nuclear vibrational mode via a reorganization energy. This model is used to explore the effects of the electronic inter-dot tunneling (coupling) matrix element and the reorganization energy on device switching. A semi-classical reduction of the model also is made to investigate the competition between field-driven device switching and the electron-vibrational self-trapping. A strong electron-vibrational coupling (high reorganization energy) gives rise to self-trapping, which inhibits the molecule's ability to switch. Nonetheless, there remains an expansive area in the tunneling-reorganization phase space where molecules can support adequate tunneling. Thus, the relationship between the tunneling matrix element and the reorganization energy affords significant leeway in the design of molecules viable for QCA applications.

Concentration-dependent photophysical switching in mixed self-assembled monolayers of pentacene and perylenediimide on gold nanoclusters.

PubMed

Kato, Daiki; Sakai, Hayato; Araki, Yasuyuki; Wada, Takehiko; Tkachenko, Nikolai V; Hasobe, Taku

2018-03-28

Photophysical control and switching on organic-inorganic hybrid interfaces are of great interest in diverse fundamental and applicative research areas. 6,13-Bis(triisopropylsilylethynyl)pentacene (TP) is well-known to exhibit efficient singlet fission (SF) for generation of high-yield triplet excited states in aggregated forms, whereas perylenediimide (PDI) ensembles show the characteristic excimer formation. Additionally, a combination of pentacene (electron donor: D) and PDI (electron acceptor: A) is expected to undergo an efficient photoinduced electron transfer (PET), and absorption of two chromophores combined covers the entire visible region. Therefore, the concentration-dependent mixed self-assembled monolayers (SAMs) composed of two chromophores enable us to control and switch the photophysical processes on a surface. In this work, a series of mixed SAMs composed of TP and PDI units on gold nanoclusters (GNCs) were newly synthesized by changing the relative molecular concentration ratios. Structural control of mixed SAMs on a gold surface based on the concentration ratios was successfully achieved. Time-resolved femtosecond and nanosecond transient absorption measurements clearly demonstrate photophysical control and switching of the above competitive reactions such as SF, electron transfer (ET) and excimer formation. The maximum quantum yields of triplet states (ΦT = ∼170%) and electron transfer (ΦET = ∼95%) were quantitatively evaluated by changing the concentration ratios. The rate constants of SF and excimer processes are largely dependent on the concentration ratios, whereas the rate constants of ET processes approximately remain constant. These findings are also discussed based on the statistical framework of the assembly of chromophores on the gold surface.

High-performance flat data center network architecture based on scalable and flow-controlled optical switching system

NASA Astrophysics Data System (ADS)

Calabretta, Nicola; Miao, Wang; Dorren, Harm

2016-03-01

Traffic in data centers networks (DCNs) is steadily growing to support various applications and virtualization technologies. Multi-tenancy enabling efficient resource utilization is considered as a key requirement for the next generation DCs resulting from the growing demands for services and applications. Virtualization mechanisms and technologies can leverage statistical multiplexing and fast switch reconfiguration to further extend the DC efficiency and agility. We present a novel high performance flat DCN employing bufferless and distributed fast (sub-microsecond) optical switches with wavelength, space, and time switching operation. The fast optical switches can enhance the performance of the DCNs by providing large-capacity switching capability and efficiently sharing the data plane resources by exploiting statistical multiplexing. Benefiting from the Software-Defined Networking (SDN) control of the optical switches, virtual DCNs can be flexibly created and reconfigured by the DCN provider. Numerical and experimental investigations of the DCN based on the fast optical switches show the successful setup of virtual network slices for intra-data center interconnections. Experimental results to assess the DCN performance in terms of latency and packet loss show less than 10^-5 packet loss and 640ns end-to-end latency with 0.4 load and 16- packet size buffer. Numerical investigation on the performance of the systems when the port number of the optical switch is scaled to 32x32 system indicate that more than 1000 ToRs each with Terabit/s interface can be interconnected providing a Petabit/s capacity. The roadmap to photonic integration of large port optical switches will be also presented.

The timing and probability of treatment switch under cost uncertainty: an application to patients with gastrointestinal stromal tumor.

PubMed

de Mello-Sampayo, Felipa

2014-03-01

Cost fluctuations render the outcome of any treatment switch uncertain, so that decision makers might have to wait for more information before optimally switching treatments, especially when the incremental cost per quality-adjusted life year (QALY) gained cannot be fully recovered later on. To analyze the timing of treatment switch under cost uncertainty. A dynamic stochastic model for the optimal timing of a treatment switch is developed and applied to a problem in medical decision taking, i.e. to patients with unresectable gastrointestinal stromal tumour (GIST). The theoretical model suggests that cost uncertainty reduces expected net benefit. In addition, cost volatility discourages switching treatments. The stochastic model also illustrates that as technologies become less cost competitive, the cost uncertainty becomes more dominant. With limited substitutability, higher quality of technologies will increase the demand for those technologies disregarding the cost uncertainty. The results of the empirical application suggest that the first-line treatment may be the better choice when considering lifetime welfare. Under uncertainty and irreversibility, low-risk patients must begin the second-line treatment as soon as possible, which is precisely when the second-line treatment is least valuable. As the costs of reversing current treatment impacts fall, it becomes more feasible to provide the option-preserving treatment to these low-risk individuals later on. Copyright © 2014 International Society for Pharmacoeconomics and Outcomes Research (ISPOR). Published by Elsevier Inc. All rights reserved.

Thin, nearly wireless adaptive optical device

NASA Technical Reports Server (NTRS)

Knowles, Gareth (Inventor); Hughes, Eli (Inventor)

2008-01-01

A thin, nearly wireless adaptive optical device capable of dynamically modulating the shape of a mirror in real time to compensate for atmospheric distortions and/or variations along an optical material is provided. The device includes an optical layer, a substrate, at least one electronic circuit layer with nearly wireless architecture, an array of actuators, power electronic switches, a reactive force element, and a digital controller. Actuators are aligned so that each axis of expansion and contraction intersects both substrate and reactive force element. Electronics layer with nearly wireless architecture, power electronic switches, and digital controller are provided within a thin-film substrate. The size and weight of the adaptive optical device is solely dominated by the size of the actuator elements rather than by the power distribution system.

Thin, nearly wireless adaptive optical device

NASA Technical Reports Server (NTRS)

Knowles, Gareth (Inventor); Hughes, Eli (Inventor)

2007-01-01

A thin, nearly wireless adaptive optical device capable of dynamically modulating the shape of a mirror in real time to compensate for atmospheric distortions and/or variations along an optical material is provided. The device includes an optical layer, a substrate, at least one electronic circuit layer with nearly wireless architecture, an array of actuators, power electronic switches, a reactive force element, and a digital controller. Actuators are aligned so that each axis of expansion and contraction intersects both substrate and reactive force element. Electronics layer with nearly wireless architecture, power electronic switches, and digital controller are provided within a thin-film substrate. The size and weight of the adaptive optical device is solely dominated by the size of the actuator elements rather than by the power distribution system.

Thin nearly wireless adaptive optical device

NASA Technical Reports Server (NTRS)

Knowles, Gareth J. (Inventor); Hughes, Eli (Inventor)

2009-01-01

A thin nearly wireless adaptive optical device capable of dynamically modulating the shape of a mirror in real time to compensate for atmospheric distortions and/or variations along an optical material is provided. The device includes an optical layer, a substrate, at least one electronic circuit layer with nearly wireless architecture, an array of actuators, power electronic switches, a reactive force element, and a digital controller. Actuators are aligned so that each axis of expansion and contraction intersects both substrate and reactive force element. Electronics layer with nearly wireless architecture, power electronic switches, and digital controller are provided within a thin-film substrate. The size and weight of the adaptive optical device is solely dominated by the size of the actuator elements rather than by the power distribution system.

Impact Sensors for Use with Electronic Fuzes

DTIC Science & Technology

1975-12-01

corroborated the major features of a theoretical analysis. More work is needed to 10R. Wasser , Impact Switch Tests, US Naval Ordnance...might be more fruitful if more effort were expended on electro- mechanical systems. One principle that could be applied to such a l0R. Wasser ...Switches for Artillery Fuzes, Part I: Development, Harry Diamond Laboratories TM-72-18 (July 1972). (10) R. Wasser , Impact Switch TestP, US Naval

On the size-dependent magnetism and all-optical magnetization switching of transition-metal silicide nanostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Glushkov, G. I.; Tuchin, A. V.; Popov, S. V.

Theoretical investigations of the electronic structure, synthesis, and all-optical magnetization switching of transition-metal silicide nanostructures are reported. The magnetic moment of the nanostructures is studied as a function of the silicide cluster size and configuration. The experimentally demonstrated magnetization switching of nanostructured nickel silicide by circularly polarized light makes it possible to create high-speed storage devices with high density data recording.

High On/Off Ratio Memristive Switching of Manganite/Cuprate Bilayer by Interfacial Magnetoelectricity

DOE PAGES

Shen, Xiao; Pennycook, Timothy J.; Hernandez-Martin, David; ...

2016-05-27

Memristive switching serves as the basis for a new generation of electronic devices. Conventional memristors are two-terminal devices in which the current is turned on and off by redistributing point defects, e.g., vacancies. Memristors based on alternative mechanisms have been explored, but achieving both high on/off ratio and low switching energy, as needed in applications, remains a challenge. This paper reports memristive switching in La 0.7Ca 0.3MnO 3/PrBa 2Cu 3O 7 bilayers with an on/off ratio greater than 103 and results of density functional theory calculations in terms of which it is concluded that the phenomenon is likely the resultmore » of a new type of interfacial magnetoelectricity. More specifically, this study shows that an external electric field induces subtle displacements of the interfacial Mn ions, which switches on/off an interfacial magnetic “dead layer”, resulting in memristive behavior for spin-polarized electron transport across the bilayer. The interfacial nature of the switching entails low energy cost, about of a tenth of atto Joule for writing/erasing a “bit”. To conclude, the results indicate new opportunities for manganite/cuprate systems and other transition metal oxide junctions in memristive applications.« less

On-board processing satellite network architecture and control study

NASA Technical Reports Server (NTRS)

Campanella, S. Joseph; Pontano, Benjamin A.; Chalmers, Harvey

1987-01-01

The market for telecommunications services needs to be segmented into user classes having similar transmission requirements and hence similar network architectures. Use of the following transmission architecture was considered: satellite switched TDMA; TDMA up, TDM down; scanning (hopping) beam TDMA; FDMA up, TDM down; satellite switched MF/TDMA; and switching Hub earth stations with double hop transmission. A candidate network architecture will be selected that: comprises multiple access subnetworks optimized for each user; interconnects the subnetworks by means of a baseband processor; and optimizes the marriage of interconnection and access techniques. An overall network control architecture will be provided that will serve the needs of the baseband and satellite switched RF interconnected subnetworks. The results of the studies shall be used to identify elements of network architecture and control that require the greatest degree of technology development to realize an operational system. This will be specified in terms of: requirements of the enabling technology; difference from the current available technology; and estimate of the development requirements needed to achieve an operational system. The results obtained for each of these tasks are presented.

Command, Control, Communications, Computers, Intelligence Electronic Warfare (C4IEW) and Sensors. Project Book. Fiscal Year 1996

DTIC Science & Technology

1996-01-01

INTENSIFICATION (AI2) ATD AERIAL SCOUT SENSORS INTEGRATION (ASSI) BISTATIC RADAR FOR WEAPONS LOCATION (BRWL) ATD CLOSE IN MAN PORTABLE MINE DETECTOR (CIMMD...MS IV PE & LINE #: 1X428010.D107 HI Operations/Support DESCRIPTION: The AN/TTC-39A Circuit Switch is a 744 line mobile , automatic ...SYNOPSIS: AN/TTC-39 IS A MOBILE , AUTOMATIC , MODULAR ELECTRONIC CIRCUIT SWITCH UNDER PROCESSOR CONTROL WITH INTEGRAL COMSEC AND MULTIPLEX EQUIPMENT. AN/TTC

MULTIPLIER CIRCUIT

DOEpatents

Chase, R.L.

1963-05-01

An electronic fast multiplier circuit utilizing a transistor controlled voltage divider network is presented. The multiplier includes a stepped potentiometer in which solid state or transistor switches are substituted for mechanical wipers in order to obtain electronic switching that is extremely fast as compared to the usual servo-driven mechanical wipers. While this multiplier circuit operates as an approximation and in steps to obtain a voltage that is the product of two input voltages, any desired degree of accuracy can be obtained with the proper number of increments and adjustment of parameters. (AEC)

Emergence of electron coherence and two-color all-optical switching in MoS2 based on spatial self-phase modulation

PubMed Central

Wu, Yanling; Wu, Qiong; Sun, Fei; Cheng, Cai; Meng, Sheng; Zhao, Jimin

2015-01-01

Generating electron coherence in quantum materials is essential in optimal control of many-body interactions and correlations. In a multidomain system this signifies nonlocal coherence and emergence of collective phenomena, particularly in layered 2D quantum materials possessing novel electronic structures and high carrier mobilities. Here we report nonlocal ac electron coherence induced in dispersed MoS2 flake domains, using coherent spatial self-phase modulation (SSPM). The gap-dependent nonlinear dielectric susceptibility χ(3) measured is surprisingly large, where direct interband transition and two-photon SSPM are responsible for excitations above and below the bandgap, respectively. A wind-chime model is proposed to account for the emergence of the ac electron coherence. Furthermore, all-optical switching is achieved based on SSPM, especially with two-color intraband coherence, demonstrating that electron coherence generation is a ubiquitous property of layered quantum materials. PMID:26351696

A 1-2 GHz pulsed and continuous wave electron paramagnetic resonance spectrometer

NASA Astrophysics Data System (ADS)

Quine, Richard W.; Rinard, George A.; Ghim, Barnard T.; Eaton, Sandra S.; Eaton, Gareth R.

1996-07-01

A microwave bridge has been constructed that performs three types of electron paramagnetic resonance experiments: continuous wave, pulsed saturation recovery, and pulsed electron spin echo. Switching between experiment types can be accomplished via front-panel switches without moving the sample. Design features and performance of the bridge and of a resonator used in testing the bridge are described. The bridge is constructed of coaxial components connected with semirigid cable. Particular attention has been paid to low-noise design of the preamplifier and stability of automatic frequency control circuits. The bridge incorporates a Smith chart display and phase adjustment meter for ease of tuning.

Electronic switching spherical array antenna

NASA Technical Reports Server (NTRS)

Stockton, R.

1978-01-01

This work was conducted to demonstrate the performance levels attainable with an ESSA (Electronic Switching Spherical Array) antenna by designing and testing an engineering model. The antenna was designed to satisfy general spacecraft environmental requirements and built to provide electronically commandable beam pointing capability throughout a hemisphere. Constant gain and beam shape throughout large volumetric coverage regions are the principle characteristics. The model is intended to be a prototype of a standard communications and data handling antenna for user scientific spacecraft with the Tracking and Data Relay Satellite System (TDRSS). Some additional testing was conducted to determine the feasibility of an integrated TDRSS and GPS (Global Positioning System) antenna system.

Research on fault characteristics about switching component failures for distribution electronic power transformers

NASA Astrophysics Data System (ADS)

Sang, Z. X.; Huang, J. Q.; Yan, J.; Du, Z.; Xu, Q. S.; Lei, H.; Zhou, S. X.; Wang, S. C.

2017-11-01

The protection is an essential part for power device, especially for those in power grid, as the failure may cost great losses to the society. A study on the voltage and current abnormality in the power electronic devices in Distribution Electronic Power Transformer (D-EPT) during the failures on switching components is presented, as well as the operational principles for 10 kV rectifier, 10 kV/400 V DC-DC converter and 400 V inverter in D-EPT. Derived from the discussion on the effects of voltage and current distortion, the fault characteristics as well as a fault diagnosis method for D-EPT are introduced.

Thermal and Mechanical Microspacecraft Technologies for Deep Space Systems Program X2000 Future Deliveries

NASA Technical Reports Server (NTRS)

Birur, Gajanana C.; Bruno, Robin J.

1999-01-01

Thermal and mechanical technologies are an important part of the Deep Space Systems Technology (DSST) Program X2000 Future Deliveries (FD) microspacecraft. A wide range of future space missions are expected to utilize the technologies and the architecture developed by DSST FD. These technologies, besides being small in physical size, make the tiny spacecraft robust and flexible. The DSST FD architecture is designed to be highly reliable and suitable for a wide range of missions such as planetary landers/orbiters/flybys, earth orbiters, cometary flybys/landers/sample returns, etc. Two of the key ideas used in the development of thermal and mechanical technologies and architectures are: 1) to include several of the thermal and mechanical functions in any given single spacecraft element and 2) the architecture be modular so that it can easily be adapted to any of the future missions. One of the thermal architectures being explored for the DSST FD microspacecraft is the integrated thermal energy management of the complete spacecraft using a fluid loop. The robustness and the simplicity of the loop and the flexibility with which it can be integrated in the spacecraft have made it attractive for applications to DSST FD. Some of the thermal technologies to be developed as a part of this architecture are passive and active cooling loops, electrically variable emittance surfaces, miniature thermal switches, and specific high density electronic cooling technologies. In the mechanical area, multifunction architecture for the structural elements will be developed. The multifunction aspect is expected to substantially reduce the mass and volume of the spacecraft. Some of the technologies that will be developed are composite material panels incorporating electronics, cabling, and thermal elements in them. The paper describes the current state of the technologies and progress to be made in the thermal and mechanical technologies and approaches for the DSST Future Deliveries microspacecraft.

Harmonic Kicker RF Cavity for the Jefferson Lab Electron-Ion Collider EM Simulation, Modification, and Measurements

NASA Astrophysics Data System (ADS)

Overstreet, Sarah; Wang, Haipeng

2017-09-01

An important step in the conceptual design for the future Jefferson Lab Electron-Ion Collider (JLEIC) is the development of supporting technologies for the Energy Recovery Linac (ERL) Electron Cooling Facility. The Harmonic Radiofrequency (RF) kicker cavity is one such device that is responsible for switching electron bunches in and out of the Circulator Cooling Ring (CCR) from and to the ERL, which is a critical part of the ion cooling process. Last year, a half scale prototype of the JLEIC harmonic RF kicker model was designed with resonant frequencies to support the summation of 5 odd harmonics (95.26 MHz, 285.78 MHz, 476.30 MHz, 666.82 MHz, and 857.35 MHz); however, the asymmetry of the kicker cavity gives rise to multipole components of the electric field at the electron-beam axis of the cavity. Previous attempts to symmetrize the electric field of this asymmetrical RF cavity have been unsuccessful. The aim of this study is to modify the existing prototype for a uniform electric field across the beam pathway so that the electron bunches will experience nearly zero beam current loading. In addition to this, we have driven the unmodified cavity with the harmonic sum and used the wire stretching method for an analysis of the multipole electric field components.

Development and simulation study of a new inverse-pinch high Coulomb transfer switch

NASA Technical Reports Server (NTRS)

Choi, Sang H.

1989-01-01

The inverse-pinch plasma switch was studied using a computer simulation code. The code was based on a 2-D, 2-temperature magnetohydrodynamic (MHD) model. The application of this code was limited to the disk-type inverse-pinch plasma switch. The results of the computer analysis appear to be in agreement with the experimental results when the same parameters are used. An inverse-pinch plasma switch for closing has been designed and tested for high-power switching requirements. An azimuthally uniform initiation of breakdown is a key factor in achieving an inverse-pinch current path in the switch. Thus, various types of triggers, such as trigger pins, wire-brush, ring trigger, and hypocycloidal-pinch (HCP) devices have been tested for uniform breakdown. Recently, triggering was achieved by injection of a plasma-ring (plasma puff) that is produced separately with hypocycloidal-pinch electrodes placed under the cathode of the main gap. The current paths at switch closing, initiated by the injection of a plasma-ring from the HCP trigger are azimuthally uniform, and the local current density is significantly reduced, so that damage to the electrodes and the insulator surfaces is minimized. The test results indicate that electron bombardment on the electrodes and the insulator surfaces is minimized. The test results indicate that electron bombardment on the electrodes is four orders of magnitude less than that of a spark-gap switch for the same switching power. Indeed, a few thousand shots with peak current exceeding a mega-ampere and with hold-off voltage up to 20 kV have been conducted without showing measurable damage to the electrodes and insulators.

Summary of the CTS Transient Event Counter data after one year of operation. [Communication Technology Satellite

NASA Technical Reports Server (NTRS)

Stevens, N. J.; Klinect, V. W.; Gore, J. V.

1977-01-01

The environmental charging of satellite surfaces during geomagnetic substorms is the apparent cause of a significant number of anomalous events occurring on geosynchronous satellites since the early 1970's. Electromagnetic pulses produced in connection with the differential charging of insulators can couple into the spacecraft harness and cause electronic switching anomalies. An investigation conducted to determine the response of the spacecraft surfaces to substorm particle fluxes makes use of a harness transient detector. The harness transient detector, called the Transient Event Counter (TEC) was built and integrated into the Canadian-American Communications Technology Satellite (CTS). A description of the TEC and its operational characteristics is given and the obtained data are discussed. The data show that the satellite surfaces appear to be charged to the point that discharges occur and that the discharge-induced transients couple into the wire harnesses.

Paper-based Synthetic Gene Networks

PubMed Central

Pardee, Keith; Green, Alexander A.; Ferrante, Tom; Cameron, D. Ewen; DaleyKeyser, Ajay; Yin, Peng; Collins, James J.

2014-01-01

Synthetic gene networks have wide-ranging uses in reprogramming and rewiring organisms. To date, there has not been a way to harness the vast potential of these networks beyond the constraints of a laboratory or in vivo environment. Here, we present an in vitro paper-based platform that provides a new venue for synthetic biologists to operate, and a much-needed medium for the safe deployment of engineered gene circuits beyond the lab. Commercially available cell-free systems are freeze-dried onto paper, enabling the inexpensive, sterile and abiotic distribution of synthetic biology-based technologies for the clinic, global health, industry, research and education. For field use, we create circuits with colorimetric outputs for detection by eye, and fabricate a low-cost, electronic optical interface. We demonstrate this technology with small molecule and RNA actuation of genetic switches, rapid prototyping of complex gene circuits, and programmable in vitro diagnostics, including glucose sensors and strain-specific Ebola virus sensors. PMID:25417167

Renewable Energy and Climate Change

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chum, H. L.

2012-01-01

The Intergovernmental Panel on Climate Change issued the Special Report on Renewable Energy Sources and Climate Change Mitigation (SRREN) at http://srren.ipcc-wg3.de/ (May 2011 electronic version; printed form ISBN 978-1-107-60710-1, 2012). More than 130 scientists contributed to the report.* The SRREN assessed existing literature on the future potential of renewable energy for the mitigation of climate change within a portfolio of mitigation options including energy conservation and efficiency, fossil fuel switching, RE, nuclear and carbon capture and storage (CCS). It covers the six most important renewable energy technologies - bioenergy, direct solar, geothermal, hydropower, ocean and wind, as well as theirmore » integration into present and future energy systems. It also takes into consideration the environmental and social consequences associated with these technologies, the cost and strategies to overcome technical as well as non-technical obstacles to their application and diffusion.« less

Methodological comparison on OLED and OLET fabrication

NASA Astrophysics Data System (ADS)

Suppiah, Sarveshvaran; Hambali, Nor Azura Malini Ahmad; Wahid, Mohamad Halim Abd; Retnasamy, Vithyacharan; Shahimin, Mukhzeer Mohamad

2018-02-01

The potential of organic semiconductor devices for light generation is demonstrated by the commercialization of display technologies based on organic light emitting diode (OLED). In OLED, organic materials play the role of light emission once the current is passed through. However, OLED do have major drawbacks whereby it suffers from photon loss and exciton quenching. Organic light emitting transistor (OLET) emerged as the new technology to compensate the efficiency and brightness loss encountered in OLED. The structure has combinational capability to switch the electronic signal such as the field effect transistor (FET) as well as light generation. The aim of this study is to methodologically compare and contrast fabrication process and evaluate feasibility of both organic light emitting diode (OLED) and organic light emitting transistor (OLET). The proposed light emitting layer in this study is poly [2-methoxy-5- (2'-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV).

Paper-based synthetic gene networks.

PubMed

Pardee, Keith; Green, Alexander A; Ferrante, Tom; Cameron, D Ewen; DaleyKeyser, Ajay; Yin, Peng; Collins, James J

2014-11-06

Synthetic gene networks have wide-ranging uses in reprogramming and rewiring organisms. To date, there has not been a way to harness the vast potential of these networks beyond the constraints of a laboratory or in vivo environment. Here, we present an in vitro paper-based platform that provides an alternate, versatile venue for synthetic biologists to operate and a much-needed medium for the safe deployment of engineered gene circuits beyond the lab. Commercially available cell-free systems are freeze dried onto paper, enabling the inexpensive, sterile, and abiotic distribution of synthetic-biology-based technologies for the clinic, global health, industry, research, and education. For field use, we create circuits with colorimetric outputs for detection by eye and fabricate a low-cost, electronic optical interface. We demonstrate this technology with small-molecule and RNA actuation of genetic switches, rapid prototyping of complex gene circuits, and programmable in vitro diagnostics, including glucose sensors and strain-specific Ebola virus sensors.

Dutch virtual integration of healthcare information.

PubMed

de Graaf, J C; Vlug, A E; van Boven, G J

2007-01-01

As information technology creates opportunities for cooperation which crosses the boundaries between healthcare institutions, it will become an integral part of the Dutch healthcare system. Along with many involved organizations in healthcare the National IT Institute for Healthcare in the Netherlands (NICTIZ) is working on the realization of a national IT infrastructure for healthcare and a national electronic patient record (EPR). An underlying national architecture is designed to enable the Dutch EPR virtually, not in a national database, nor on a patient's smartcard. The required secure infrastructure provides generic functions for healthcare applications: patient identification, authentication and authorization of healthcare professionals. The first national applications in the EPR program using a national index of where patient data is stored, are the electronic medication record and the electronic record for after hours GP services. The rollout of the electronic medication record and electronic record for after hours GP services has been started in 2007. To guarantee progress of electronic data exchange in healthcare in the Netherlands we have primarily opted for two healthcare applications: the electronic medication record and the electronic record for after hours GP services. The use of a national switch-point containing the registry of where to find what information, guarantees that the professional receives the most recent information and omits large databases to contain downloaded data. Proper authorization, authentication as well as tracing by the national switchpoint also ensures a secure environment for the communication of delicate information.

Study of switching transients in high frequency converters

NASA Technical Reports Server (NTRS)

Zinger, Donald S.; Elbuluk, Malik E.; Lee, Tony

1993-01-01

As the semiconductor technologies progress rapidly, the power densities and switching frequencies of many power devices are improved. With the existing technology, high frequency power systems become possible. Use of such a system is advantageous in many aspects. A high frequency ac source is used as the direct input to an ac/ac pulse-density-modulation (PDM) converter. This converter is a new concept which employs zero voltage switching techniques. However, the development of this converter is still in its infancy stage. There are problems associated with this converter such as a high on-voltage drop, switching transients, and zero-crossing detecting. Considering these problems, the switching speed and power handling capabilities of the MOS-Controlled Thyristor (MCT) makes the device the most promising candidate for this application. A complete insight of component considerations for building an ac/ac PDM converter for a high frequency power system is addressed. A power device review is first presented. The ac/ac PDM converter requires switches that can conduct bi-directional current and block bi-directional voltage. These bi-directional switches can be constructed using existing power devices. Different bi-directional switches for the converter are investigated. Detailed experimental studies of the characteristics of the MCT under hard switching and zero-voltage switching are also presented. One disadvantage of an ac/ac converter is that turn-on and turn-off of the switches has to be completed instantaneously when the ac source is at zero voltage. Otherwise shoot-through current or voltage spikes can occur which can be hazardous to the devices. In order for the devices to switch softly in the safe operating area even under non-ideal cases, a unique snubber circuit is used in each bi-directional switch. Detailed theory and experimental results for circuits using these snubbers are presented. A current regulated ac/ac PDM converter built using MCT's and IGBT's is evaluated.

GAS DISCHARGE SWITCH EVALUATION FOR RHIC BEAM ABORT KICKER APPLICATION.

DOE Office of Scientific and Technical Information (OSTI.GOV)

ZHANG,W.; SANDBERG,J.; SHELDRAKE,R.

2002-06-30

A gas discharge switch EEV HX3002 is being evaluated at Brookhaven National Laboratory as a possible candidate of RHIC Beam Abort Kicker modulator main switch. At higher beam energy and higher beam intensity, the switch stability becomes very crucial. The hollow anode thyratron used in the existing system is not rated for long reverse current conduction. The reverse voltage arcing caused thyratron hold-off voltage de-rating has been the main limitation of the system operation. To improve the system reliability, a new type of gas discharge switch has been suggested by Marconi Applied Technology for its reverse conducting capability.

Studies of ZVS soft switching of dual-active-bridge isolated bidirectional DC-DC converters

NASA Astrophysics Data System (ADS)

Xu, Fei; Zhao, Feng; Shi, Qibiao; Wen, Xuhui

2018-05-01

To operate dual-active-bridge isolated bidirectional dc- dc converter (DAB) at high efficiency, the two bridge switches must operate with Zero-Voltage-Switching (ZVS) over as wide an operating range as possible. This paper proposes a new perspective on realizing ZVS in dead-time. An exact theoretical analysis and mathematical mode is built to explain the process of ZVS switching in dead-time under Single Phase Shift (SPS) control strategy. In order to assure the two bridge switches operate on soft switching, every SPS switching point is analyzed. Generally, dead-time will be determined when the power electronic devices is selected. The key factor to realizing ZVS is the size of the end time of resonance comparing to dead-time. Through detailed analysis, it can obtain the conditions of all switches achieving ZVS turn-on and turn-off. Finally, simulation validates the theoretical analysis and some advice are given to realize the ZVS soft switching.

Design and Optimization of AlN based RF MEMS Switches

NASA Astrophysics Data System (ADS)

Hasan Ziko, Mehadi; Koel, Ants

2018-05-01

Radio frequency microelectromechanical system (RF MEMS) switch technology might have potential to replace the semiconductor technology in future communication systems as well as communication satellites, wireless and mobile phones. This study is to explore the possibilities of RF MEMS switch design and optimization with aluminium nitride (AlN) thin film as the piezoelectric actuation material. Achieving low actuation voltage and high contact force with optimal geometry using the principle of piezoelectric effect is the main motivation for this research. Analytical and numerical modelling of single beam type RF MEMS switch used to analyse the design parameters and optimize them for the minimum actuation voltage and high contact force. An analytical model using isotropic AlN material properties used to obtain the optimal parameters. The optimized geometry of the device length, width and thickness are 2000 µm, 500 µm and 0.6 µm respectively obtained for the single beam RF MEMS switch. Low actuation voltage and high contact force with optimal geometry are less than 2 Vand 100 µN obtained by analytical analysis. Additionally, the single beam RF MEMS switch are optimized and validated by comparing the analytical and finite element modelling (FEM) analysis.

First-order metal-insulator transitions in vanadates from first principles

NASA Astrophysics Data System (ADS)

Kumar, Anil; Rabe, Karin

2013-03-01

Materials that exhibit first-order metal-insulator transitions, with the accompanying abrupt change in the conductivity, have potential applications as switches in future electronic devices. Identification of materials and exploration of the atomic-scale mechanisms for switching between the two electronic states is a focus of current research. In this work, we search for first-order metal-insulator transitions in transition metal compounds, with a particular focus on d1 and d2 systems, by using first principles calculations to screen for an alternative low-energy state having not only a electronic character opposite to that of the ground state, but a distinct structure and/or magnetic ordering which would permit switching by an applied field or stress. We will present the results of our investigation of the perovskite compounds SrVO3, LaVO3, CaVO3, YVO3, LaTiO3 and related layered phase, including superlattices and Ruddlesden-Popper phases. While the pure compounds do not satisfy the search criteria, the layered phases show promising results.

Probing the electrical switching of a memristive optical antenna by STEM EELS

PubMed Central

Schoen, David T.; Holsteen, Aaron L.; Brongersma, Mark L.

2016-01-01

The scaling of active photonic devices to deep-submicron length scales has been hampered by the fundamental diffraction limit and the absence of materials with sufficiently strong electro-optic effects. Plasmonics is providing new opportunities to circumvent this challenge. Here we provide evidence for a solid-state electro-optical switching mechanism that can operate in the visible spectral range with an active volume of less than (5 nm)3 or ∼10−6 λ3, comparable to the size of the smallest electronic components. The switching mechanism relies on electrochemically displacing metal atoms inside the nanometre-scale gap to electrically connect two crossed metallic wires forming a cross-point junction. These junctions afford extreme light concentration and display singular optical behaviour upon formation of a conductive channel. The active tuning of plasmonic antennas attached to such junctions is analysed using a combination of electrical and optical measurements as well as electron energy loss spectroscopy in a scanning transmission electron microscope. PMID:27412052

LTCC magnetic components for high density power converter

NASA Astrophysics Data System (ADS)

Lebourgeois, Richard; Labouré, Eric; Lembeye, Yves; Ferrieux, Jean-Paul

2018-04-01

This paper deals with multilayer magnetic components for power electronics application and specifically for high frequency switching. New formulations based on nickel-zinc-copper spinel ferrites were developed for high power and high frequency applications. These ferrites can be sintered at low temperature (around 900°C) which makes them compatible with the LTCC (Low Temperature Co-fired Ceramics) technology. Metallic parts of silver or gold can be fully integrated inside the ferrite while guaranteeing the integrity of both the ferrite and the metal. To make inductors or transformers with the required properties, it is mandatory to have nonmagnetic parts between the turns of the winding. Then it is essential to find a dielectric material, which can be co-sintered both with the ferrite and the metal. We will present the solution we found to this problem and we will describe the results we obtained for a multilayer co-sintered transformer. We will see that these new components have good performance compared with the state of the art and are very promising for developing high density switching mode power supplies.

Restraint Method of Voltage Total Harmonic Distortion in Distribution Network by Power Conditioner Systems using Measured Data from IT Switches

NASA Astrophysics Data System (ADS)

Kawasaki, Shoji; Shimoda, Kazuki; Tanaka, Motohiro; Taoka, Hisao; Matsuki, Junya; Hayashi, Yasuhiro

Recently, the amount of distributed generation (DG) such as photovoltaic system and wind power generator system installed in a distribution system has been increasing because of reduction of the effects on the environment. However, the harmonic troubles in the distribution system are apprehended in the background of the increase of connection of DGs through the inverters and the spread of power electronics equipment. In this paper, the authors propose a restraint method of voltage total harmonic distortion (THD) in a whole distribution network by active filter (AF) operation of plural power conditioner systems (PCS). Moreover, the authors propose a determination method of the optimal gain of AF operation so as to minimize the maximum value of voltage THD in the distribution network by the real-time feedback control with measured data from the information technology (IT) switches. In order to verify the validity of the proposed method, the numerical calculations are carried out by using an analytical model of distribution network interconnected DGs with PCS.

Transparent resistive switching memory using aluminum oxide on a flexible substrate

NASA Astrophysics Data System (ADS)

Yeom, Seung-Won; Shin, Sang-Chul; Kim, Tan-Young; Ha, Hyeon Jun; Lee, Yun-Hi; Shim, Jae Won; Ju, Byeong-Kwon

2016-02-01

Resistive switching memory (ReRAM) has attracted much attention in recent times owing to its fast switching, simple structure, and non-volatility. Flexible and transparent electronic devices have also attracted considerable attention. We therefore fabricated an Al2O3-based ReRAM with transparent indium-zinc-oxide (IZO) electrodes on a flexible substrate. The device transmittance was found to be higher than 80% in the visible region (400-800 nm). Bended states (radius = 10 mm) of the device also did not affect the memory performance because of the flexibility of the two transparent IZO electrodes and the thin Al2O3 layer. The conduction mechanism of the resistive switching of our device was explained by ohmic conduction and a Poole-Frenkel emission model. The conduction mechanism was proved by oxygen vacancies in the Al2O3 layer, as analyzed by x-ray photoelectron spectroscopy analysis. These results encourage the application of ReRAM in flexible and transparent electronic devices.

Carrier Density Modulation in Ge Heterostructure by Ferroelectric Switching

DOE PAGES

Ponath, Patrick; Fredrickson, Kurt; Posadas, Agham B.; ...

2015-01-14

The development of nonvolatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching, and measurable semiconductor modulation. Here we report a true ferroelectric field effect carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 (BTO) grown by molecular beam epitaxy (MBE) on Ge. Using density functional theory, we demonstrate that switching of BTO polarization results in a large electric potential change in Ge. Aberration-corrected electron microscopy confirms the interface sharpness, and BTO tetragonality. Electron-energy-lossmore » spectroscopy (EELS) indicates the absence of any low permittivity interlayer at the interface with Ge. Using piezoelectric force microscopy (PFM), we confirm the presence of fully switchable, stable ferroelectric polarization in BTO that appears to be single domain. Using microwave impedance microscopy (MIM), we clearly demonstrate a ferroelectric field effect.« less

Complexity-Enabled Sensor Networks and Photonic Switching Devices

DTIC Science & Technology

2008-12-20

slow diffusion of atoms out of the pump laser beams. The Doppler -broadened linewidth of the transition at this temperature was ~550 MHz. To prevent...Transverse Patterns for All-Optical Switching,’ Quantum Electronics and Laser Science 2008, San Jose, CA, May 5, 2008. Z. Gao and D.J. Gauthier...2007. A. M. C. Dawes and D. J. Gauthier, `Using Transverse Patterns for All-Optical Switching,’ Ninth Rochester Conference on Coherence & Quantum

Fast Electromechanical Switches Based on Carbon Nanotubes

NASA Technical Reports Server (NTRS)

Kaul, Anupama; Wong, Eric; Epp, Larry

2008-01-01

Electrostatically actuated nanoelectromechanical switches based on carbon nanotubes have been fabricated and tested in a continuing effort to develop high-speed switches for a variety of stationary and portable electronic equipment. As explained below, these devices offer advantages over electrostatically actuated microelectromechanical switches, which, heretofore, have represented the state of the art of rapid, highly miniaturized electromechanical switches. Potential applications for these devices include computer memories, cellular telephones, communication networks, scientific instrumentation, and general radiation-hard electronic equipment. A representative device of the present type includes a single-wall carbon nanotube suspended over a trench about 130 nm wide and 20 nm deep in an electrically insulating material. The ends of the carbon nanotube are connected to metal electrodes, denoted the source and drain electrodes. At bottom of the trench is another metal electrode, denoted the pull electrode (see figure). In the off or open switch state, no voltage is applied, and the nanotube remains out of contact with the pull electrode. When a sufficiently large electric potential (switching potential) is applied between the pull electrode and either or both of the source and drain electrodes, the resulting electrostatic attraction bends and stretches the nanotube into contact with the pull electrode, thereby putting the switch into the "on" or "closed" state, in which substantial current (typically as much as hundreds of nanoamperes) is conducted. Devices of this type for use in initial experiments were fabricated on a thermally oxidized Si wafer, onto which Nb was sputter-deposited for use as the pull-electrode layer. Nb was chosen because its refractory nature would enable it to withstand the chemical and thermal conditions to be subsequently imposed for growing carbon nanotubes. A 200- nm-thick layer of SiO2 was formed on top of the Nb layer by plasma-enhanced chemical vapor deposition. In the device regions, the SiO2 layer was patterned to thin it to the 20-nm trench depth. The trenches were then patterned by electron- beam lithography and formed by reactive- ion etching of the pattern through the 20-nm-thick SiO2 to the Nb layer.

Molecular Rotors as Switches

PubMed Central

Xue, Mei; Wang, Kang L.

2012-01-01

The use of a functional molecular unit acting as a state variable provides an attractive alternative for the next generations of nanoscale electronics. It may help overcome the limits of conventional MOSFETd due to their potential scalability, low-cost, low variability, and highly integratable characteristics as well as the capability to exploit bottom-up self-assembly processes. This bottom-up construction and the operation of nanoscale machines/devices, in which the molecular motion can be controlled to perform functions, have been studied for their functionalities. Being triggered by external stimuli such as light, electricity or chemical reagents, these devices have shown various functions including those of diodes, rectifiers, memories, resonant tunnel junctions and single settable molecular switches that can be electronically configured for logic gates. Molecule-specific electronic switching has also been reported for several of these device structures, including nanopores containing oligo(phenylene ethynylene) monolayers, and planar junctions incorporating rotaxane and catenane monolayers for the construction and operation of complex molecular machines. A specific electrically driven surface mounted molecular rotor is described in detail in this review. The rotor is comprised of a monolayer of redox-active ligated copper compounds sandwiched between a gold electrode and a highly-doped P+ Si. This electrically driven sandwich-type monolayer molecular rotor device showed an on/off ratio of approximately 104, a read window of about 2.5 V, and a retention time of greater than 104 s. The rotation speed of this type of molecular rotor has been reported to be in the picosecond timescale, which provides a potential of high switching speed applications. Current-voltage spectroscopy (I-V) revealed a temperature-dependent negative differential resistance (NDR) associated with the device. The analysis of the device I–V characteristics suggests the source of the observed switching effects to be the result of the redox-induced ligand rotation around the copper metal center and this attribution of switching is consistent with the observed temperature dependence of the switching behavior as well as the proposed energy diagram of the device. The observed resistance switching shows the potential for future non-volatile memories and logic devices applications. This review will discuss the progress and provide a perspective of molecular motion for nanoelectronics and other applications.

Switching single chain magnet behavior via photoinduced bidirectional metal-to-metal charge transfer† †Electronic supplementary information (ESI) available: Synthesis and physical measurement details. Crystal data in CIF format and additional figures (Fig. S1–S15). CCDC 1528877. For ESI and crystallographic data in CIF or other electronic format see DOI: 10.1039/c7sc03401f

PubMed Central

Jiang, Wenjing; Jiao, Chengqi; Meng, Yinshan; Zhao, Liang; Liu, Qiang

2017-01-01

The preparation of single-chain magnets (SCMs) with photo-switchable bistable states is essential for the development of high-density photo-recording devices. However, the reversible switching of the SCM behavior upon light irradiation is a formidable challenge. Here we report a well-isolated double zigzag chain {[Fe(bpy)(CN)4]2[Co(phpy)2]}·2H2O (bpy = 2,2′-bipyridine, phpy = 4-phenylpyridine), which exhibits reversible redox reactions with interconversion between FeIIILS(μ-CN)CoIIHS(μ-NC)FeIIILS (LS = low-spin, HS = high-spin) and FeIIILS(μ-CN)CoIIILS(μ-NC)FeIILS linkages under alternating irradiation with 808 and 532 nm lasers. The bidirectional photo-induced metal-to-metal charge transfer results in significant changes of anisotropy and intrachain magnetic interactions, reversibly switching the SCM behavior. The on-switching SCM behavior driven by light irradiation at 808 nm could be reversibly switched off by irradiation at 532 nm. The results provide an additional and independent way to control the bistable states of SCMs by switching in the 0 → 1 → 0 sequence, with potential applications in high density storage and molecular switches. PMID:29629126

Threshold Switching Characteristics of Nb/NbO 2 /TiN Vertical Devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Yuhan; Comes, Ryan B.; Wolf, Stuart A.

2016-01-01

Nb/NbO2/TiN vertical structures were synthesized in-situ and patterned to devices with different contact areas. The devices exhibited threshold resistive switching with minimal hysteresis and a small EThreshold (60~90 kV/cm). The switching behavior was unipolar, and demonstrated good repeatability. A less sharp but still sizable change in the device resistance was observed up to 150 °C. It was found that the resistive switching without Nb capping layer exhibited the hysteretic behavior and much larger EThreshold (~250 kV/cm) likely due to a 2-3 nm surface Nb2O5 layer. The stable threshold switching behavior well above room temperature shows the potential applications of thismore » device as an electronic switch.« less

Process change evaluation framework for allogeneic cell therapies: impact on drug development and commercialization.

PubMed

Hassan, Sally; Huang, Hsini; Warren, Kim; Mahdavi, Behzad; Smith, David; Jong, Simcha; Farid, Suzanne S

2016-04-01

Some allogeneic cell therapies requiring a high dose of cells for large indication groups demand a change in cell expansion technology, from planar units to microcarriers in single-use bioreactors for the market phase. The aim was to model the optimal timing for making this change. A development lifecycle cash flow framework was created to examine the implications of process changes to microcarrier cultures at different stages of a cell therapy's lifecycle. The analysis performed under assumptions used in the framework predicted that making this switch earlier in development is optimal from a total expected out-of-pocket cost perspective. From a risk-adjusted net present value view, switching at Phase I is economically competitive but a post-approval switch can offer the highest risk-adjusted net present value as the cost of switching is offset by initial market penetration with planar technologies. The framework can facilitate early decision-making during process development.

Fully integrated graphene electronic biosensor for label-free detection of lead (II) ion based on G-quadruplex structure-switching.

PubMed

Li, Yijun; Wang, Cheng; Zhu, Yibo; Zhou, Xiaohong; Xiang, Yu; He, Miao; Zeng, Siyu

2017-03-15

This work presents a fully integrated graphene field-effect transistor (GFET) biosensor for the label-free detection of lead ions (Pb 2+ ) in aqueous-media, which first implements the G-quadruplex structure-switching biosensing principle in graphene nanoelectronics. We experimentally illustrate the biomolecular interplay that G-rich DNA single-strands with one-end confined on graphene surface can specifically interact with Pb 2+ ions and switch into G-quadruplex structures. Since the structure-switching of electrically charged DNA strands can disrupt the charge distribution in the vicinity of graphene surface, the carrier equilibrium in graphene sheet might be altered, and manifested by the conductivity variation of GFET. The experimental data and theoretical analysis show that our devices are capable of the label-free and specific quantification of Pb 2+ with a detection limit down to 163.7ng/L. These results first verify the signaling principle competency of G-quadruplex structure-switching in graphene electronic biosensors. Combining with the advantages of the compact device structure and convenient electrical signal, a label-free GFET biosensor for Pb 2+ monitoring is enabled with promising application potential. Copyright © 2016 Elsevier B.V. All rights reserved.

Flavin redox bifurcation as a mechanism for controlling the direction of electron flow during extracellular electron transfer.

PubMed

Okamoto, Akihiro; Hashimoto, Kazuhito; Nealson, Kenneth H

2014-10-06

The iron-reducing bacterium Shewanella oneidensis MR-1 has a dual directional electronic conduit involving 40 heme redox centers in flavin-binding outer-membrane c-type cytochromes (OM c-Cyts). While the mechanism for electron export from the OM c-Cyts to an anode is well understood, how the redox centers in OM c-Cyts take electrons from a cathode has not been elucidated at the molecular level. Electrochemical analysis of live cells during switching from anodic to cathodic conditions showed that altering the direction of electron flow does not require gene expression or protein synthesis, but simply redox potential shift about 300 mV for a flavin cofactor interacting with the OM c-Cyts. That is, the redox bifurcation of the riboflavin cofactor in OM c-Cyts switches the direction of electron conduction in the biological conduit at the cell-electrode interface to drive bacterial metabolism as either anode or cathode catalysts. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Method and apparatus for pulse width modulation control of an AC induction motor

DOEpatents

Geppert, Steven; Slicker, James M.

1984-01-01

An inverter is connected between a source of DC power and a three-phase AC induction motor, and a micro-processor-based circuit controls the inverter using pulse width modulation techniques. In the disclosed method of pulse width modulation, both edges of each pulse of a carrier pulse train are equally modulated by a time proportional to sin .THETA., where .THETA. is the angular displacement of the pulse center at the motor stator frequency from a fixed reference point on the carrier waveform. The carrier waveform frequency is a multiple of the motor stator frequency. The modulated pulse train is then applied to each of the motor phase inputs with respective phase shifts of 120.degree. at the stator frequency. Switching control commands of electronic switches in the inverter are stored in a random access memory (RAM) and the locations of the RAM are successively read out in a cyclic manner, each bit of a given RAM location controlling a respective phase input of the motor. The DC power source preferably comprises rechargeable batteries and all but one of the electronic switches in the inverter can be disabled, the remaining electronic switch being part of a "flyback" DC-DC converter circuit for recharging the battery.

Voltage Control of Metal-insulator Transition and Non-volatile Ferroelastic Switching of Resistance in VOx/PMN-PT Heterostructures

PubMed Central

Nan, Tianxiang; Liu, Ming; Ren, Wei; Ye, Zuo-Guang; Sun, Nian X.

2014-01-01

The central challenge in realizing electronics based on strongly correlated electronic states, or ‘Mottronics', lies in finding an energy efficient way to switch between the distinct collective phases with a control voltage in a reversible and reproducible manner. In this work, we demonstrate that a voltage-impulse-induced ferroelastic domain switching in the (011)-oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates allows a robust non-volatile tuning of the metal-insulator transition in the VOx films deposited onto them. In such a VOx/PMN-PT heterostructure, the unique two-step electric polarization switching covers up to 90% of the entire poled area and contributes to a homogeneous in-plane anisotropic biaxial strain, which, in turn, enables the lattice changes and results in the suppression of metal-insulator transition in the mechanically coupled VOx films by 6 K with a resistance change up to 40% over a broad range of temperature. These findings provide a framework for realizing in situ and non-volatile tuning of strain-sensitive order parameters in strongly correlated materials, and demonstrate great potentials in delivering reconfigurable, compactable, and energy-efficient electronic devices. PMID:25088796

Voltage control of metal-insulator transition and non-volatile ferroelastic switching of resistance in VOx/PMN-PT heterostructures.

PubMed

Nan, Tianxiang; Liu, Ming; Ren, Wei; Ye, Zuo-Guang; Sun, Nian X

2014-08-04

The central challenge in realizing electronics based on strongly correlated electronic states, or 'Mottronics', lies in finding an energy efficient way to switch between the distinct collective phases with a control voltage in a reversible and reproducible manner. In this work, we demonstrate that a voltage-impulse-induced ferroelastic domain switching in the (011)-oriented 0.71Pb(Mg1/3Nb2/3)O3-0.29PbTiO3 (PMN-PT) substrates allows a robust non-volatile tuning of the metal-insulator transition in the VOx films deposited onto them. In such a VOx/PMN-PT heterostructure, the unique two-step electric polarization switching covers up to 90% of the entire poled area and contributes to a homogeneous in-plane anisotropic biaxial strain, which, in turn, enables the lattice changes and results in the suppression of metal-insulator transition in the mechanically coupled VOx films by 6 K with a resistance change up to 40% over a broad range of temperature. These findings provide a framework for realizing in situ and non-volatile tuning of strain-sensitive order parameters in strongly correlated materials, and demonstrate great potentials in delivering reconfigurable, compactable, and energy-efficient electronic devices.

Method and apparatus for pulse width modulation control of an AC induction motor

NASA Technical Reports Server (NTRS)

Geppert, Steven (Inventor); Slicker, James M. (Inventor)

1984-01-01

An inverter is connected between a source of DC power and a three-phase AC induction motor, and a micro-processor-based circuit controls the inverter using pulse width modulation techniques. In the disclosed method of pulse width modulation, both edges of each pulse of a carrier pulse train are equally modulated by a time proportional to sin .THETA., where .THETA. is the angular displacement of the pulse center at the motor stator frequency from a fixed reference point on the carrier waveform. The carrier waveform frequency is a multiple of the motor stator frequency. The modulated pulse train is then applied to each of the motor phase inputs with respective phase shifts of 120.degree. at the stator frequency. Switching control commands of electronic switches in the inverter are stored in a random access memory (RAM) and the locations of the RAM are successively read out in a cyclic manner, each bit of a given RAM location controlling a respective phase input of the motor. The DC power source preferably comprises rechargeable batteries and all but one of the electronic switches in the inverter can be disabled, the remaining electronic switch being part of a flyback DC-DC converter circuit for recharging the battery.

Bistable metamaterial for switching and cascading elastic vibrations

PubMed Central

Foehr, André; Daraio, Chiara

2017-01-01

The realization of acoustic devices analogous to electronic systems, like diodes, transistors, and logic elements, suggests the potential use of elastic vibrations (i.e., phonons) in information processing, for example, in advanced computational systems, smart actuators, and programmable materials. Previous experimental realizations of acoustic diodes and mechanical switches have used nonlinearities to break transmission symmetry. However, existing solutions require operation at different frequencies or involve signal conversion in the electronic or optical domains. Here, we show an experimental realization of a phononic transistor-like device using geometric nonlinearities to switch and amplify elastic vibrations, via magnetic coupling, operating at a single frequency. By cascading this device in a tunable mechanical circuit board, we realize the complete set of mechanical logic elements and interconnect selected ones to execute simple calculations. PMID:28416663

Electron-Beam Switches For A High Peak Power Sled-II Pulse Compressor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hirshfield, Jay, L.

2015-12-02

Omega-P demonstrated triggered electron-beam switches on the L=2 m dual-delay-line X-band pulse compressor at Naval Research Laboratory (NRL). In those experiments, with input pulses of up to 9 MW from the Omega-P/NRL X-band magnicon, output pulses having peak powers of 140-165 MW and durations of 16-20 ns were produced, with record peak power gains M of 18-20. Switch designs are described based on the successful results that should be suitable for use with the existing SLAC SLED-II delay line system, to demonstrate C=9, M=7, and n>>78%, yielding 173ns compressed pulses with peak powers up to 350MW with input of amore » single 50-MW.« less

Realization of a four-step molecular switch in scanning tunneling microscope manipulation of single chlorophyll-a molecules

PubMed Central

Iancu, Violeta; Hla, Saw-Wai

2006-01-01

Single chlorophyll-a molecules, a vital resource for the sustenance of life on Earth, have been investigated by using scanning tunneling microscope manipulation and spectroscopy on a gold substrate at 4.6 K. Chlorophyll-a binds on Au(111) via its porphyrin unit while the phytyl-chain is elevated from the surface by the support of four CH3 groups. By injecting tunneling electrons from the scanning tunneling microscope tip, we are able to bend the phytyl-chain, which enables the switching of four molecular conformations in a controlled manner. Statistical analyses and structural calculations reveal that all reversible switching mechanisms are initiated by a single tunneling-electron energy-transfer process, which induces bond rotation within the phytyl-chain. PMID:16954201

Adjusting for treatment switching in randomised controlled trials - A simulation study and a simplified two-stage method.

PubMed

Latimer, Nicholas R; Abrams, K R; Lambert, P C; Crowther, M J; Wailoo, A J; Morden, J P; Akehurst, R L; Campbell, M J

2017-04-01

Estimates of the overall survival benefit of new cancer treatments are often confounded by treatment switching in randomised controlled trials (RCTs) - whereby patients randomised to the control group are permitted to switch onto the experimental treatment upon disease progression. In health technology assessment, estimates of the unconfounded overall survival benefit associated with the new treatment are needed. Several switching adjustment methods have been advocated in the literature, some of which have been used in health technology assessment. However, it is unclear which methods are likely to produce least bias in realistic RCT-based scenarios. We simulated RCTs in which switching, associated with patient prognosis, was permitted. Treatment effect size and time dependency, switching proportions and disease severity were varied across scenarios. We assessed the performance of alternative adjustment methods based upon bias, coverage and mean squared error, related to the estimation of true restricted mean survival in the absence of switching in the control group. We found that when the treatment effect was not time-dependent, rank preserving structural failure time models (RPSFTM) and iterative parameter estimation methods produced low levels of bias. However, in the presence of a time-dependent treatment effect, these methods produced higher levels of bias, similar to those produced by an inverse probability of censoring weights method. The inverse probability of censoring weights and structural nested models produced high levels of bias when switching proportions exceeded 85%. A simplified two-stage Weibull method produced low bias across all scenarios and provided the treatment switching mechanism is suitable, represents an appropriate adjustment method.

Advanced architectures and the required technologies for next-generation communications satellite systems

NASA Technical Reports Server (NTRS)

Arnold, Ray; Naderi, F. Michael

1988-01-01

The hardware requirements for multibeam operation and onboard data processing and switching on future communication satellites are reviewed. Topics addressed include multiple-beam antennas, frequency-addressable beams, baseband vs IF switching, FDM/TDMA systems, and bulk demodulators. The proposed use of these technologies in the NASA ACTS, Italsat, and the Japanese ETS-VI is discussed in detail and illustrated with extensive diagrams, maps, drawings, and tables of projected performance data.

Digital SPC Switching Technology--Foreign Technology Assessment

DTIC Science & Technology

1990-12-01

India C DOT MAX C DOT DSS 0 TDX 1 Samsung , Goldstar Korea TDX 10 Daewoo, Otelco (ROK) System X Plessey/GEC U.K. (Siemens) Fetex 150 Fujitsu Japan HDX...x South Korea Alcatel ATT Malaysia Ericsson NEC New Zealand NEC Philippines DAEWOO Siemens Singapore Fujitsu (AU-, NEC Gateway Switches) Taiwan...Yes Israel Northern Telecom DMS 10 Telrad Yes OMS 100 * Malaysia Ericsson AXE Pewira Ericsson Future SDN BHD Mexico Alcatel System 12 Indetel No

Planning Strategies for Transportation Fuel Consumption Reduction: An Evaluation of the Hawaii Clean Energy Initiative’s Transportation Plan

DTIC Science & Technology

2014-04-01

technologies to improve fleet efficiency goals, and evaluate switching to biodiesel for trucks and vehicles without other alternatives (HCEI 2011...standards and biodiesel usage levels 2020 Goal 50 MGY of renewable fuels 28 working with industry to increase EV market penetration, and...Strategy Reduction Potential Purchase more efficient vehicles 10-20% Promote hybrid technologies 10-20% Evaluate biodiesel switching (freight) TBD

Voice over Internet protocol for the orthodontic practice: a sensible switch from plain old telephone service.

PubMed

Mupparapu, Muralidhar

2008-03-01

Voice over Internet protocol (VoIP) is a revolutionary new technology that is causing a stir in the telecommunications industry and threatening the existence of traditional telephone service providers. Based on a simple method of converting analog audio signals into digital data before being transmitted over the Internet, VoIP has gained immense popularity among consumers. The technology is now regarded as an alternative to traditional telephone service for the orthodontic office. When the economics are considered, it is cost-effective, especially for a busy orthodontic practice where the call volumes both in and out are always high. VoIP has the potential to reduce costs, break the barriers between local vs long-distance calling, and make life easier for the office staff. However, deploying VoIP requires a cautious and thought-out process. Users should fully understand the risks and benefits before switching from the public switched telephone network. VoIP customers and service providers are vulnerable to many of the same impersonation-based attacks by those who attempt toll fraud, and identity and information theft. In this article, VoIP is introduced to orthodontic practitioners, who might be unfamiliar with this technology. Internet protocol based private branch exchange systems that are currently marketed as open-source technologies are also reviewed. Additionally, VoIP is compared with the traditional public switched telephone network technology and evaluated for its potential applications in an orthodontic office for both increased efficiency and cost savings.

Highly integrated 3×3 silicon thermo-optical switch using a single combined phase shifter for optical interconnects.

PubMed

Wang, Wanjun; Zhou, Haifeng; Yang, Jianyi; Wang, Minghua; Jiang, Xiaoqing

2012-06-15

We report on an experimental 3×3 thermo-optical switch on silicon on insulator. By controlling a single combined phase shifter, light from any input waveguide can be directed to any output waveguide, showing a simple control method and highly integrated structure as compared to the conventional multiway optical switches. Furthermore, the proposed optical switch can be generalized to be a 1×N and N×N optical switch without an extra phase shifter. The switch is fabricated by complementary metal oxide semiconductor technology. By experiment, full 3×3 switching functionality is demonstrated at a wavelength of 1.55 μm, with an average cross talk of -11.1  dB and a power consumption of 97.5 mW.

The effect of working gas pressure on the switching rate of a kivotron

NASA Astrophysics Data System (ADS)

Bokhan, P. A.; Gugin, P. P.; Zakrevsky, D. E.; Lavrukhin, M. A.

2016-05-01

The switching rate in gas-discharge devices (kivotrons) based on an "open" discharge with counterpropagating electron beams is studied experimentally. Structures with a total cathode area of 2 cm2 were used. A monotonic reduction in the switching time with an increase in the working gas pressure and in the voltage amplitude at the time of breakdown is demonstrated. The minimum switching time is ~240 ps at a voltage of 17 kV. The maximum current rise rate, which is limited by the discharge circuit inductance, is 3 × 1012 A/s.

Low Temperature Resistive Switching Behavior in a Manganite

NASA Astrophysics Data System (ADS)

Salvo, Christopher; Lopez, Melinda; Tsui, Stephen

2012-02-01

The development of new nonvolatile memory devices remains an important field of consumer electronics. A possible candidate is bipolar resistive switching, a method by which the resistance of a material changes when a voltage is applied. Although there is a great deal of research on this topic, not much has been done at low temperatures. In this work, we compare the room temperature and low temperature behaviors of switching in a manganite thin film. The data indicates that the switching is suppressed upon cooling to cryogenic temperatures, and the presence of crystalline charge traps is tied to the physical mechanism.

Printed Antennas Made Reconfigurable by Use of MEMS Switches

NASA Technical Reports Server (NTRS)

Simons, Rainee N.

2005-01-01

A class of reconfigurable microwave antennas now undergoing development comprise fairly conventional printed-circuit feed elements and radiating patches integrated with novel switches containing actuators of the microelectromechanical systems (MEMS) type. In comparison with solid-state electronic control devices incorporated into some prior printed microwave antennas, the MEMS-based switches in these antennas impose lower insertion losses and consume less power. Because the radio-frequency responses of the MEMS switches are more nearly linear, they introduce less signal distortion. In addition, construction and operation are simplified because only a single DC bias line is needed to control each MEMS actuator.

From dead leaves to sustainable organic resistive switching memory.

PubMed

Sun, Bai; Zhu, Shouhui; Mao, Shuangsuo; Zheng, Pingping; Xia, Yudong; Yang, Feng; Lei, Ming; Zhao, Yong

2018-03-01

An environmental-friendly, sustainable, pollution-free, biodegradable, flexible and wearable electronic device hold advanced potential applications. Here, an organic resistive switching memory device with Ag/Leaves/Ti/PET structure on a flexible polyethylene terephthalate (PET) substrate was fabricated for the first time. We observed an obvious resistive switching memory characteristic with large switching resistance ratio and stable cycle performance at room temperature. This work demonstrates that leaves, a useless waste, can be properly treated to make useful devices. Furthermore, the as-fabricated devices can be degraded naturally without damage to the environment. Copyright © 2017 Elsevier Inc. All rights reserved.

CMOS-Compatible SOI MESFETS for Radiation-Hardened DC-to-DC Converters

NASA Technical Reports Server (NTRS)

Thornton, Trevor; Lepkowski, William; Wilk, Seth

2013-01-01

A radiation-tolerant transistor switch has been developed that can operate between 196 and +150 C for DC-to-DC power conversion applications. A prototype buck regulator component was demonstrated to be performing well after a total ionizing dose of 300 krad(Si). The prototype buck converters showed good efficiencies at ultra-high switching speeds in the range of 1 to 10 MHz. Such high switching frequency will enable smaller, lighter buck converters to be developed as part of the next project. Switching regulators are widely used in commercial applications including portable consumer electronics.

Superlattices: problems and new opportunities, nanosolids

PubMed Central

2011-01-01

Superlattices were introduced 40 years ago as man-made solids to enrich the class of materials for electronic and optoelectronic applications. The field metamorphosed to quantum wells and quantum dots, with ever decreasing dimensions dictated by the technological advancements in nanometer regime. In recent years, the field has gone beyond semiconductors to metals and organic solids. Superlattice is simply a way of forming a uniform continuum for whatever purpose at hand. There are problems with doping, defect-induced random switching, and I/O involving quantum dots. However, new opportunities in component-based nanostructures may lead the field of endeavor to new heights. The all important translational symmetry of solids is relaxed and local symmetry is needed in nanosolids. PMID:21711653

A preliminary design of the Ti:LiNbO3 optical channel waveguide

NASA Astrophysics Data System (ADS)

Choi, Yat

1992-03-01

One of the goals of technology-based activities within the Electronic Warfare Division is to facilitate the development within Australia, of facilities and a capability to manufacture sophisticated, highspeed electro-optic devices, in particular, the integrated optical amplitude modulator and integrated optical switch, for use in microwave and millimetre-wave systems for the Australian Defense Force (ADF). An initial step towards this goal would be to produce a low-loss and single-mode propagation optical channel waveguide using titanium-indiffused lithium niobate (Ti:LiNbO3). As no dimensions and fabrication parameters have yet been optimized, this technical report provides preliminary design data which optimizes these parameters.

Multi Bus DC-DC Converter in Electric Hybrid Vehicles

NASA Astrophysics Data System (ADS)

Krithika, V.; Subramaniam, C.; Sridharan, R.; Geetha, A.

2018-04-01

This paper is cotncerned with the design, simulation and fabrication of the prototype of a Multi bus DC- DC converter operating from 42V DC and delivering 14V DC and 260V DC. As a result, three DC buses are interconnected through a single power electronic circuitry. Such a requirement is energized in the development of a hybrid electric automobile which uses the technology of fuel cell. This is implemented by using a Bidirectional DC-DC converter configuration which is ideally suitable for multiple outputs with mutual electrical isolation. For the sake of reduced size and cost of step-up transformer, selection of a high frequency switching cycle at 10 KHz was done.

Ferroelastic domain switching dynamics under electrical and mechanical excitations.

PubMed

Gao, Peng; Britson, Jason; Nelson, Christopher T; Jokisaari, Jacob R; Duan, Chen; Trassin, Morgan; Baek, Seung-Hyub; Guo, Hua; Li, Linze; Wang, Yiran; Chu, Ying-Hao; Minor, Andrew M; Eom, Chang-Beom; Ramesh, Ramamoorthy; Chen, Long-Qing; Pan, Xiaoqing

2014-05-02

In thin film ferroelectric devices, switching of ferroelastic domains can significantly enhance electromechanical response. Previous studies have shown disagreement regarding the mobility or immobility of ferroelastic domain walls, indicating that switching behaviour strongly depends on specific microstructures in ferroelectric systems. Here we study the switching dynamics of individual ferroelastic domains in thin Pb(Zr0.2,Ti0.8)O3 films under electrical and mechanical excitations by using in situ transmission electron microscopy and phase-field modelling. We find that ferroelastic domains can be effectively and permanently stabilized by dislocations at the substrate interface while similar domains at free surfaces without pinning dislocations can be removed by either electric or stress fields. For both electrical and mechanical switching, ferroelastic switching is found to occur most readily at the highly active needle points in ferroelastic domains. Our results provide new insights into the understanding of polarization switching dynamics as well as the engineering of ferroelectric devices.

Ferroelastic domain switching dynamics under electrical and mechanical excitations

NASA Astrophysics Data System (ADS)

Gao, Peng; Britson, Jason; Nelson, Christopher T.; Jokisaari, Jacob R.; Duan, Chen; Trassin, Morgan; Baek, Seung-Hyub; Guo, Hua; Li, Linze; Wang, Yiran; Chu, Ying-Hao; Minor, Andrew M.; Eom, Chang-Beom; Ramesh, Ramamoorthy; Chen, Long-Qing; Pan, Xiaoqing

2014-05-01

In thin film ferroelectric devices, switching of ferroelastic domains can significantly enhance electromechanical response. Previous studies have shown disagreement regarding the mobility or immobility of ferroelastic domain walls, indicating that switching behaviour strongly depends on specific microstructures in ferroelectric systems. Here we study the switching dynamics of individual ferroelastic domains in thin Pb(Zr0.2,Ti0.8)O3 films under electrical and mechanical excitations by using in situ transmission electron microscopy and phase-field modelling. We find that ferroelastic domains can be effectively and permanently stabilized by dislocations at the substrate interface while similar domains at free surfaces without pinning dislocations can be removed by either electric or stress fields. For both electrical and mechanical switching, ferroelastic switching is found to occur most readily at the highly active needle points in ferroelastic domains. Our results provide new insights into the understanding of polarization switching dynamics as well as the engineering of ferroelectric devices.

Improvement on Main/backup Controller Switching Device of the Nozzle Throat Area Control System for a Turbofan Aero Engine

NASA Astrophysics Data System (ADS)

Li, Jie; Duan, Minghu; Yan, Maode; Li, Gang; Li, Xiaohui

2014-06-01

A full authority digital electronic controller (FADEC) equipped with a full authority hydro-mechanical backup controller (FAHMBC) is adopted as the nozzle throat area control system (NTACS) of a turbofan aero engine. In order to ensure the switching reliability of the main/backup controller, the nozzle throat area control switching valve was improved from three-way convex desktop slide valve to six-way convex desktop slide valve. Simulation results show that, if malfunctions of FAEDC occur and abnormal signals are outputted from FADEC, NTACS will be seriously influenced by the main/backup controller switching in several working states, while NTACS will not be influenced by using the improved nozzle throat area control switching valve, thus the controller switching process will become safer and smoother and the working reliability of this turbofan aero engine is improved by the controller switching device improvement.

The 10 kW power electronics for hydrogen arcjets

NASA Technical Reports Server (NTRS)

Hamley, John A.; Pinero, Luis R.; Hill, Gerald M.

1992-01-01

A combination of emerging mission considerations such as 'launch on schedule', resource limitations, and the development of higher power spacecraft busses has resulted in renewed interest in high power hydrogen arcjet systems with specific impulses greater than 1000 s for Earth-space orbit transfer and maneuver applications. Solar electric propulsion systems with about 10 kW of power appear to offer payload benefits at acceptable trip times. This work outlines the design and development of 10 kW hydrogen arcjet power electronics and results of arcjet integration testing. The power electronics incorporated a full bridge switching topology similar to that employed in state of the art 5 kW power electronics, and the output filter included an output current averaging inductor with an integral pulse generation winding for arcjet ignition. Phase shifted, pulse width modulation with current mode control was used to regulate the current delivered to arcjet, and a low inductance power stage minimized switching transients. Hybrid power Metal Oxide Semiconductor Field Effect Transistors were used to minimize conduction losses. Switching losses were minimized using a fast response, optically isolated, totem-pole gate drive circuit. The input bus voltage for the unit was 150 V, with a maximum output voltage of 225 V. The switching frequency of 20 kHz was a compromise between mass savings and higher efficiency. Power conversion efficiencies in excess of 0.94 were demonstrated, along with steady state load current regulation of 1 percent. The power electronics were successfully integrated with a 10 kW laboratory hydrogen arcjet, and reliable, nondestructive starts and transitions to steady state operation were demonstrated. The estimated specific mass for a flight packaged unit was 2 kg/kW.

Changes in puffing behavior among smokers who switched from tobacco to electronic cigarettes

PubMed Central

Lee, Yong Hee; Gawron, Michal; Goniewicz, Maciej Lukasz

2015-01-01

Introduction Nicotine intake from electronic cigarette (e-cigarettes) increases with user’s experience. This suggests that smokers who switched from tobacco to electronic cigarettes compensate for nicotine over the time to get as much nicotine as they need. One of the mechanism by which smokers may compensate for nicotine is by modifying their puffing behavior. The aim of the study was to assess the changes in puffing behavior after switching from conventional to electronic cigarettes among regular smokers. Materials and Methods Twenty smokers (11 female, aged 31±10, CPD 16±8, FTND 4±3, and exhaled CO 16±17 (mean±SD)) who were naïve to e-cigarettes participated in this study. They were asked to substitute their regular tobacco cigarettes with first generation e-cigarettes (labelled 18 mg nicotine) for two weeks. Puffing topography (number of puffs, puff volume, intervals between puffs, and average puff flow rate) was measured at the initial use (baseline), as well as after one and two weeks of product use. We tested changes in puffing topography outcomes using repeated measures ANOVA. Results We found that after one week of using e-cigarettes, participants significantly increased the average time they puffed on e-cigarettes from 2.2±0.1 (mean±SEM) to 3.1±0.3 sec (p<0.05). The average puff flow rate decreased from 30.6±2.3 to 25.1±1.8 ml/sec after one week of e-cigarette use (p<0.05). Conclusions Our data show that smokers modify their puffing behavior after switching from tobacco to electronic cigarettes by taking longer and slower puffs. The potential reason for changing puffing behavior is to compensate for less efficient nicotine delivery from e-cigarettes. PMID:25930009

Changes in puffing behavior among smokers who switched from tobacco to electronic cigarettes.

PubMed

Lee, Yong Hee; Gawron, Michal; Goniewicz, Maciej Lukasz

2015-09-01

Nicotine intake from electronic cigarette (e-cigarettes) increases with user's experience. This suggests that smokers who switched from tobacco to electronic cigarettes compensate for nicotine over time to get as much nicotine as they need. One of the mechanisms by which smokers may compensate for nicotine is by modifying their puffing behavior. The aim of the study was to assess the changes in puffing behavior after switching from conventional to electronic cigarettes among regular smokers. Twenty smokers (11 female, aged 31±10, CPD 16±8, FTND 4±3, and exhaled CO 16±17 (mean±SD)) who were naïve to e-cigarettes participated in this study. They were asked to substitute their regular tobacco cigarettes with first generation e-cigarettes (labeled 18mg nicotine) for two weeks. Puffing topography (number of puffs, puff volume, intervals between puffs, and average puff flow rate) was measured at the initial use (baseline), as well as after one and two weeks of product use. We tested changes in puffing topography outcomes using repeated measures ANOVA. We found that after one week of using e-cigarettes, participants significantly increased the average time they puffed on e-cigarettes from 2.2±0.1 (mean±SEM) to 3.1±0.3s (p<0.05). The average puff flow rate decreased from 30.6±2.3 to 25.1±1.8ml/s after one week of e-cigarette use (p<0.05). Our data show that smokers modify their puffing behavior after switching from tobacco to electronic cigarettes by taking longer and slower puffs. The potential reason for changing puffing behavior is to compensate for less efficient nicotine delivery from e-cigarettes. Copyright © 2015 Elsevier Ltd. All rights reserved.

Experimental investigation on the development characteristics of initial electrons in a gas pressurized closing switch under DC voltage

NASA Astrophysics Data System (ADS)

Rongxiao, ZHAI; Mengtong, QIU; Weixi, LUO; Peitian, CONG; Tao, HUANG; Jiahui, YIN; Tianyang, ZHANG

2018-04-01

As one of the most important elements in linear transformer driver (LTD) based systems, the gas pressurized closing switches are required to operate with a very low prefire probability during the DC-charging process to ensure reliable operation and stable output of the whole pulsed power system. The most direct and effective way to control the prefire probability is to select a suitable working coefficient. The study of the development characteristics of the initially generated electrons is useful for optimizing the working coefficient and improving the prefire characteristic of the switches. In this paper an ultraviolet pulsed laser is used to generate initial electrons inside the gap volume. A current measuring system is used to measure the time-dependent current generated by the growth of the initial electrons so as to study the development characteristics of the electrons under different working coefficients. Experimental results show that the development characteristics of the initial electrons are influenced obviously by the working coefficient. With the increase of the working coefficient, the development degree of the electrons increases consequently. At the same times, there is a threshold of working coefficient which produces the effect of ionization on electrons. The range of the threshold has a slow growth but remains close to 65% with the gas pressure increase. When the working coefficient increases further, γ processes are starting to be generated inside the gap volume. In addition, an optimal working coefficient beneficial for improving the prefire characteristic is indicated and further tested.

Laser Reliability Prediction

DTIC Science & Technology

1975-08-01

prism adjustment screw 12 - 45° prism adjustment lockscrew 13-45° prism 14 - Porro prism 15 - Collimating telescope X-axis adjustment lockscrew...4) 16 - Q-switch tilt adjustment screw 17 - Q-switch tilt adjustment lockscrew (4) 18 - Porro prism adjustment nut (3) 19 - Porro prism mounting...is increased by several orders of magnitude. "Q" switch technology has progressed from rotating prisms or mirrors to electro-optical (E/0

Quantum modeling of ultrafast photoinduced charge separation

NASA Astrophysics Data System (ADS)

Rozzi, Carlo Andrea; Troiani, Filippo; Tavernelli, Ivano

2018-01-01

Phenomena involving electron transfer are ubiquitous in nature, photosynthesis and enzymes or protein activity being prominent examples. Their deep understanding thus represents a mandatory scientific goal. Moreover, controlling the separation of photogenerated charges is a crucial prerequisite in many applicative contexts, including quantum electronics, photo-electrochemical water splitting, photocatalytic dye degradation, and energy conversion. In particular, photoinduced charge separation is the pivotal step driving the storage of sun light into electrical or chemical energy. If properly mastered, these processes may also allow us to achieve a better command of information storage at the nanoscale, as required for the development of molecular electronics, optical switching, or quantum technologies, amongst others. In this Topical Review we survey recent progress in the understanding of ultrafast charge separation from photoexcited states. We report the state-of-the-art of the observation and theoretical description of charge separation phenomena in the ultrafast regime mainly focusing on molecular- and nano-sized solar energy conversion systems. In particular, we examine different proposed mechanisms driving ultrafast charge dynamics, with particular regard to the role of quantum coherence and electron-nuclear coupling, and link experimental observations to theoretical approaches based either on model Hamiltonians or on first principles simulations.

Silicon Carbide MOSFET-Based Switching Power Amplifier for Precision Magnet Control

NASA Astrophysics Data System (ADS)

Miller, Kenneth; Ziemba, Timothy; Prager, James; Picard, Julian

2016-10-01

Eagle Harbor Technologies, Inc. (EHT) is using the latest in solid-state switching technologies to advance the state-of-the-art in magnet control for fusion science. Silicon carbide (SiC) MOSFETs offer advantages over IGBTs including lower drive energy requirements, lower conduction and switching losses, and higher switching frequency capabilities. When comparing SiC and traditional silicon-based MOSFETs, SiC MOSFETs provide higher current carrying capability allowing for smaller package weights and sizes and lower operating temperature. To validate the design, EHT has developed a low-power switching power amplifier (SPA), which has been used for precision control of magnetic fields, including rapidly changing the fields in coils. This design has been incorporated in to a high power SPA, which has been bench tested. This high power SPA will be tested at the Helicity Injected Torus (HIT) at the University of Washington. Following successful testing, EHT will produce enough SiC MOSFET-based SPAs to replace all of the units at HIT, which allows for higher frequency operation and an overall increase in pulsed current levels.

Get Current: Switch on Clean Energy Activity Book

DOE Office of Scientific and Technical Information (OSTI.GOV)

None

2014-06-01

Switching on clean energy technologies means strengthening the economy while protecting the environment. This activity book for all ages promotes energy awareness, with facts on different types of energy and a variety of puzzles in an energy theme.

Geothermal switch heater installation, testing and monitoring : phases 1 & 2.

DOT National Transportation Integrated Search

2016-07-01

Transportation Technology Center, Inc. (TTCI), Norfolk Southern (NS), and John A. Volpe National Transportation Systems Center (Volpe) completed Phases 1 and 2 of a project on a working prototype geothermal switch heating system designed to test the ...

High-performance silicon photonic tri-state switch based on balanced nested Mach-Zehnder interferometer.

PubMed

Lu, Zeqin; Celo, Dritan; Mehrvar, Hamid; Bernier, Eric; Chrostowski, Lukas

2017-09-25

This work proposes a novel silicon photonic tri-state (cross/bar/blocking) switch, featuring high-speed switching, broadband operation, and crosstalk-free performance. The switch is designed based on a 2 × 2 balanced nested Mach-Zehnder interferometer structure with carrier injection phase tuning. As compared to silicon photonic dual-state (cross/bar) switches based on Mach-Zehnder interferometers with carrier injection phase tuning, the proposed switch not only has better performance in cross/bar switching but also provides an extra blocking state. The unique blocking state has a great advantage in applications of N × N switch fabrics, where idle switching elements in the fabrics can be configured to the blocking state for crosstalk suppression. According to our numerical experiments on a fully loaded 8 × 8 dilated Banyan switch fabric, the worst output crosstalk of the 8 × 8 switch can be dramatically suppressed by more than 50 dB, by assigning the blocking state to idle switching elements in the fabric. The results of this work can extend the functionality of silicon photonic switches and significantly improve the performance of on-chip N × N photonic switching technologies.

Electric field-triggered metal-insulator transition resistive switching of bilayered multiphasic VOx

NASA Astrophysics Data System (ADS)

Won, Seokjae; Lee, Sang Yeon; Hwang, Jungyeon; Park, Jucheol; Seo, Hyungtak

2018-01-01

Electric field-triggered Mott transition of VO2 for next-generation memory devices with sharp and fast resistance-switching response is considered to be ideal but the formation of single-phase VO2 by common deposition techniques is very challenging. Here, VOx films with a VO2-dominant phase for a Mott transition-based metal-insulator transition (MIT) switching device were successfully fabricated by the combined process of RF magnetron sputtering of V metal and subsequent O2 annealing to form. By performing various material characterizations, including scanning transmission electron microscopy-electron energy loss spectroscopy, the film is determined to have a bilayer structure consisting of a VO2-rich bottom layer acting as the Mott transition switching layer and a V2O5/V2O3 mixed top layer acting as a control layer that suppresses any stray leakage current and improves cyclic performance. This bilayer structure enables excellent electric field-triggered Mott transition-based resistive switching of Pt-VOx-Pt metal-insulator-metal devices with a set/reset current ratio reaching 200, set/reset voltage of less than 2.5 V, and very stable DC cyclic switching upto 120 cycles with a great set/reset current and voltage distribution less than 5% of standard deviation at room temperature, which are specifications applicable for neuromorphic or memory device applications. [Figure not available: see fulltext.

Fabrication and Electrical Characterization of Correlated Oxide Field Effect Switching Devices for High Speed Electronics

DTIC Science & Technology

2015-11-19

Shriram Ramanathan HARVARD COLLEGE PRESIDENT & FELLOWS OF Final Report 11/19/2015 DISTRIBUTION A: Distribution approved for public release. AF Office... Harvard University 29 Oxford St, Pierce Hall, Cambridge, MA 02138 8. PERFORMING ORGANIZATION REPORT NUMBER 9. SPONSORING/MONITORING AGENCY NAME(S...characterization of correlated oxide field effect switching devices for  high speed electronics  PI: Shriram Ramanathan,  Harvard  University  AFOSR Grant FA9550‐12‐1

An Overview of Power Electronics Applications in Fuel Cell Systems: DC and AC Converters

PubMed Central

Ali, M. S.; Kamarudin, S. K.; Masdar, M. S.; Mohamed, A.

2014-01-01

Power electronics and fuel cell technologies play an important role in the field of renewable energy. The demand for fuel cells will increase as fuel cells become the main power source for portable applications. In this application, a high-efficiency converter is an essential requirement and a key parameter of the overall system. This is because the size, cost, efficiency, and reliability of the overall system for portable applications primarily depend on the converter. Therefore, the selection of an appropriate converter topology is an important and fundamental aspect of designing a fuel cell system for portable applications as the converter alone plays a major role in determining the overall performance of the system. This paper presents a review of power electronics applications in fuel cell systems, which include various topology combinations of DC converters and AC inverters and which are primarily used in fuel cell systems for portable or stand-alone applications. This paper also reviews the switching techniques used in power conditioning for fuel cell systems. Finally, this paper addresses the current problem encountered with DC converters and AC inverter. PMID:25478581

An overview of power electronics applications in fuel cell systems: DC and AC converters.

PubMed

Ali, M S; Kamarudin, S K; Masdar, M S; Mohamed, A

2014-01-01

Power electronics and fuel cell technologies play an important role in the field of renewable energy. The demand for fuel cells will increase as fuel cells become the main power source for portable applications. In this application, a high-efficiency converter is an essential requirement and a key parameter of the overall system. This is because the size, cost, efficiency, and reliability of the overall system for portable applications primarily depend on the converter. Therefore, the selection of an appropriate converter topology is an important and fundamental aspect of designing a fuel cell system for portable applications as the converter alone plays a major role in determining the overall performance of the system. This paper presents a review of power electronics applications in fuel cell systems, which include various topology combinations of DC converters and AC inverters and which are primarily used in fuel cell systems for portable or stand-alone applications. This paper also reviews the switching techniques used in power conditioning for fuel cell systems. Finally, this paper addresses the current problem encountered with DC converters and AC inverter.

Heat switch technology for cryogenic thermal management

NASA Astrophysics Data System (ADS)

Shu, Q. S.; Demko, J. A.; E Fesmire, J.

2017-12-01

Systematic review is given of development of novel heat switches at cryogenic temperatures that alternatively provide high thermal connection or ideal thermal isolation to the cold mass. These cryogenic heat switches are widely applied in a variety of unique superconducting systems and critical space applications. The following types of heat switch devices are discussed: 1) magnetic levitation suspension, 2) shape memory alloys, 3) differential thermal expansion, 4) helium or hydrogen gap-gap, 5) superconducting, 6) piezoelectric, 7) cryogenic diode, 8) magneto-resistive, and 9) mechanical demountable connections. Advantages and limitations of different cryogenic heat switches are examined along with the outlook for future thermal management solutions in materials and cryogenic designs.

Non-volatile, solid state bistable electrical switch

NASA Technical Reports Server (NTRS)

Williams, Roger M. (Inventor)

1994-01-01

A bistable switching element is made of a material whose electrical resistance reversibly decreases in response to intercalation by positive ions. Flow of positive ions between the bistable switching element and a positive ion source is controlled by means of an electrical potential applied across a thermal switching element. The material of the thermal switching element generates heat in response to electrical current flow therethrough, which in turn causes the material to undergo a thermal phase transition from a high electrical resistance state to a low electrical resistance state as the temperature increases above a predetermined value. Application of the electrical potential in one direction renders the thermal switching element conductive to pass electron current out of the ion source. This causes positive ions to flow from the source into the bistable switching element and intercalate the same to produce a non-volatile, low resistance logic state. Application of the electrical potential in the opposite direction causes reverse current flow which de-intercalates the bistable logic switching element and produces a high resistance logic state.

Exceptional-point Dynamics in Photonic Honeycomb Lattices with PT Symmetry

DTIC Science & Technology

2012-01-17

coherent perfect laser absorber [25], spatial optical switches [26], and nonlinear switching structures [27]. Despite the wealth of results on...Petermann, IEEE J. Quantum Electron. 15, 566 (1979); A. E. Siegman , Phys. Rev. A 39, 1264 (1989). [36] M. V. Berry, J. Mod. Opt. 50, 63 (2003); S.-Y

High-Voltage MOSFET Switching Circuit

NASA Technical Reports Server (NTRS)

Jensen, Kenneth A.

1995-01-01

Circuit reliably switches power at supply potential of minus 1,500 V, with controlled frequency and duty cycle. Used in argon-plasma ion-bombardment equipment for texturing copper electrodes, as described in "Texturing Copper To Reduce Secondary Emission of Electrons" (LEW-15898), also adapted to use in powering gaseous flash lamps and stroboscopes.