Ellipsometry of anodic film growth

DOE Office of Scientific and Technical Information (OSTI.GOV)

Smith, C.G.

1978-08-01

An automated computer interpretation of ellisometer measurements of anodic film growth was developed. Continuous mass and charge balances were used to utilize more fully the time dependence of the ellipsometer data and the current and potential measurements. A multiple-film model was used to characterize the growth of films which proceeds via a dissolution--precipitation mechanism; the model also applies to film growth by adsorption and nucleation mechanisms. The characteristic parameters for film growth describe homogeneous and heterogeneous crystallization rates, film porosities and degree of hydration, and the supersaturation of ionic species in the electrolyte. Additional descriptions which may be chosen aremore » patchwise film formation, nonstoichiometry of the anodic film, and statistical variations in the size and orientation of secondary crystals. Theories were developed to describe the optical effects of these processes. An automatic, self-compensating ellipsometer was used to study the growth in alkaline solution of anodic films on silver, cadmium, and zinc. Mass-transport conditions included stagnant electrolyte and forced convection in a flow channel. Multiple films were needed to characterize the optical properties of these films. Anodic films grew from an electrolyte supersatuated in the solution-phase dissolution product. The degree of supersaturation depended on transport conditions and had a major effect on the structure of the film. Anodic reaction rates were limited by the transport of charge carriers through a primary surface layer. The primary layers on silver, zinc, and cadmium all appeared to be nonstoichiometric, containing excess metal. Diffusion coefficients, transference numbers, and the free energy of adsorption of zinc oxide were derived from ellipsometer measurements. 97 figures, 13 tables, 198 references.« less

Semiconductor technology program: Progress briefs

NASA Technical Reports Server (NTRS)

Galloway, K. F.; Scace, R. I.; Walters, E. J.

1981-01-01

Measurement technology for semiconductor materials, process control, and devices, is discussed. Silicon and silicon based devices are emphasized. Highlighted activities include semiinsulating GaAs characterization, an automatic scanning spectroscopic ellipsometer, linewidth measurement and coherence, bandgap narrowing effects in silicon, the evaluation of electrical linewidth uniformity, and arsenicomplanted profiles in silicon.

Development of a spectroscopic Mueller matrix imaging ellipsometer for nanostructure metrology

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Xiuguo; Du, Weichao; Yuan, Kui

2016-05-15

In this paper, we describe the development of a spectroscopic Mueller matrix imaging ellipsometer (MMIE), which combines the great power of Mueller matrix ellipsometry with the high spatial resolution of optical microscopy. A dual rotating-compensator configuration is adopted to collect the full 4 × 4 imaging Mueller matrix in a single measurement. The light wavelengths are scanned in the range of 400–700 nm by a monochromator. The instrument has measurement accuracy and precision better than 0.01 for all the Mueller matrix elements in both the whole image and the whole spectral range. The instrument was then applied for the measurementmore » of nanostructures combined with an inverse diffraction problem solving technique. The experiment performed on a photoresist grating sample has demonstrated the great potential of MMIE for accurate grating reconstruction from spectral data collected by a single pixel of the camera and for efficient quantification of geometrical profile of the grating structure over a large area with pixel resolution. It is expected that MMIE will be a powerful tool for nanostructure metrology in future high-volume nanomanufacturing.« less

Vacuum ellipsometry as a method for probing glass transition in thin polymer films.

PubMed

Efremov, Mikhail Yu; Soofi, Shauheen S; Kiyanova, Anna V; Munoz, Claudio J; Burgardt, Peter; Cerrina, Franco; Nealey, Paul F

2008-04-01

A vacuum ellipsometer has been designed for probing the glass transition in thin supported polymer films. The device is based on the optics of a commercial spectroscopic phase-modulated ellipsometer. A custom-made vacuum chamber evacuated by oil-free pumps, variable temperature optical table, and computer-based data acquisition system was described. The performance of the tool has been demonstrated using 20-200 nm thick poly(methyl methacrylate) and polystyrene films coated on silicon substrates at 10(-6)-10(-8) torr residual gas pressure. Both polymers show pronounced glass transitions. The difficulties in assigning in the glass transition temperature are discussed with respect to the experimental challenges of the measurements in thin polymer films. It is found that the experimental curves can be significantly affected by a residual gas. This effect manifests itself at lower temperatures as a decreased or even negative apparent thermal coefficient of expansion, and is related to the uptake and desorption of water by the samples during temperature scans. It is also found that an ionization gauge--the standard accessory of any high vacuum system--can cause a number of spurious phenomena including drift in the experimental data, roughening of the polymer surface, and film dewetting.

Study of the retardance of a birefringent waveplate at tilt incidence by Mueller matrix ellipsometer

NASA Astrophysics Data System (ADS)

Gu, Honggang; Chen, Xiuguo; Zhang, Chuanwei; Jiang, Hao; Liu, Shiyuan

2018-01-01

Birefringent waveplates are indispensable optical elements for polarization state modification in various optical systems. The retardance of a birefringent waveplate will change significantly when the incident angle of the light varies. Therefore, it is of great importance to study such field-of-view errors on the polarization properties, especially the retardance of a birefringent waveplate, for the performance improvement of the system. In this paper, we propose a generalized retardance formula at arbitrary incidence and azimuth for a general plane-parallel composite waveplate consisting of multiple aligned single waveplates. An efficient method and corresponding experimental set-up have been developed to characterize the retardance versus the field-of-view angle based on a constructed spectroscopic Mueller matrix ellipsometer. Both simulations and experiments on an MgF2 biplate over an incident angle of 0°-8° and an azimuthal angle of 0°-360° are presented as an example, and the dominant experimental errors are discussed and corrected. The experimental results strongly agree with the simulations with a maximum difference of 0.15° over the entire field of view, which indicates the validity and great potential of the presented method for birefringent waveplate characterization at tilt incidence.

Acquisition of Infrared Variable Angle Spectroscopic Ellipsometer (IR-VASE)

DTIC Science & Technology

2016-04-22

External Advisory Board Meeting in Rio Piedras, PR. March 2016 Quiñonez B.*, Castilla D., Almodóvar J.; “ Polysaccharide -based polyelectrolyte...April 2016 Quiñonez B.*, Castilla D., Almodóvar J.; “ Polysaccharide -based polyelectrolyte multilayers: Physicochemical characterization and in...2016 Quiñonez B.*, Castilla D., Almodóvar J.; “ Polysaccharide -based polyelectrolyte multilayers: Physicochemical characterization and in vitro

Characterization facility for magneto-optic media and systems

NASA Technical Reports Server (NTRS)

Mansuripur, M.; Fu, H.; Gadetsky, S.; Sugaya, S.; Wu, T. H.; Zambuto, J.; Gerber, R.; Goodman, T.; Erwin, J. K.

1993-01-01

Objectives of this research are: (1) to measure the hysteresis loop, Kerr rotation angle, anisotropy energy profile, Hall voltage, and magnetoresistance of thin-film magneto-optic media using our loop-tracer; (2) measure the wavelength-dependence of the Kerr rotation angle, Theta(sub k), and ellipticity, epsilon(sub k), for thin-film media using our magneto-optic Kerr spectrometer (MOKS); (3) measure the dielectric tensor of thin-film and multilayer samples using our variable-angle magneto-optic ellipsometer (VAMOE); (4) measure the hysteresis loop, coercivity, remanent magnetization, saturation magnetization, and anisotropy energy constant for thin film magnetic media using vibrating sample magnetometry; (5) observe small magnetic domains and investigate their interaction with defects using magnetic force microscopy; (6) perform static read/write/erase experiments on thin-film magneto-optic media using our static test station; (7) integrate the existing models of magnetization, magneto-optic effects, coercivity, and anisotropy in an interactive and user-friendly environment, and analyze the characterization data obtained in the various experiments, using this modeling package; (8) measure focusing- and tracking-error signals on a static testbed, determine the 'feedthrough' for various focusing schemes, investigate the effects of polarization and birefringence, and compare the results with diffraction-based calculations; and (9) measure the birefringence of optical disk substrates using two variable angle ellipsometers.

Enhanced sensitivity to dielectric function and thickness of absorbing thin films by combining total internal reflection ellipsometry with standard ellipsometry and reflectometry

NASA Astrophysics Data System (ADS)

Lizana, A.; Foldyna, M.; Stchakovsky, M.; Georges, B.; Nicolas, D.; Garcia-Caurel, E.

2013-03-01

High sensitivity of spectroscopic ellipsometry and reflectometry for the characterization of thin films can strongly decrease when layers, typically metals, absorb a significant fraction of the light. In this paper, we propose a solution to overcome this drawback using total internal reflection ellipsometry (TIRE) and exciting a surface longitudinal wave: a plasmon-polariton. As in the attenuated total reflectance technique, TIRE exploits a minimum in the intensity of reflected transversal magnetic (TM) polarized light and enhances the sensitivity of standard methods to thicknesses of absorbing films. Samples under study were stacks of three films, ZnO : Al/Ag/ZnO : Al, deposited on glass substrates. The thickness of the silver layer varied from sample to sample. We performed measurements with a UV-visible phase-modulated ellipsometer, an IR Mueller ellipsometer and a UV-NIR reflectometer. We used the variance-covariance formalism to evaluate the sensitivity of the ellipsometric data to different parameters of the optical model. Results have shown that using TIRE doubled the sensitivity to the silver layer thickness when compared with the standard ellipsometry. Moreover, the thickness of the ZnO : Al layer below the silver layer can be reliably quantified, unlike for the fit of the standard ellipsometry data, which is limited by the absorption of the silver layer.

Interface plasmonic properties of silver coated by ultrathin metal oxides

NASA Astrophysics Data System (ADS)

Sytchkova, A.; Zola, D.; Grilli, M. L.; Piegari, A.; Fang, M.; He, H.; Shao, J.

2011-09-01

Many fields of high technology take advantage of conductor-dielectric interface properties. Deeper knowledge of physical processes that determine the optical response of the structures containing metal-dielectric interfaces is important for improving the performance of thin film devices containing such materials. Here we present a study on optical properties of several ultrathin metal oxides deposited over thin silver layers. Some widely used materials (Al2O3, SiO2, Y2O3, HfO2) were selected for deposition by r.f. sputtering, and the created metal-dielectric structures with two of them, alumina and silica, were investigated in this work using attenuated total reflectance (ATR) technique and by variable-angle spectroscopic ellipsometry (VASE). VASE was performed with a help of a commercial ellipsometer at various incident angles and in a wide spectral range. A home-made sample holder manufactured for WVASE ellipsometer and operational in Otto configuration has been implemented for angle-resolved and spectral ATR measurements. Simultaneous analysis of data obtained by these two independent techniques allows elaboration of a representative model for plasmonic-related phenomena at metal-dielectric interface. The optical constants of the interface layers formed between metal and ultrathin oxide layers are investigated. A series of oxides chosen for this study allows a comparative analysis aimed for selection of the most appropriate materials for different applications.

Instrumentation of the variable-angle magneto-optic ellipsometer and its application to M-O media and other non-magnetic films

NASA Technical Reports Server (NTRS)

Zhou, Andy F.; Erwin, J. Kevin; Mansuripur, M.

1992-01-01

A new and comprehensive dielectric tensor characterization instrument is presented for characterization of magneto-optical recording media and non-magnetic thin films. Random and systematic errors of the system are studied. A series of TbFe, TbFeCo, and Co/Pt samples with different composition and thicknesses are characterized for their optical and magneto-optical properties. The optical properties of several non-magnetic films are also measured.

Swedish Defence Research Abstracts 1980/81-3 (Froe Forsvars Forsknings Referat 1980/81-3).

DTIC Science & Technology

1981-11-01

computes the refractive index or the thickness of thin mono- or multi -layer films. The program is written in Fortran and is adapted to the ellipsometer at...Unmnnounced EtN8PECT: Justlflotl Distribution/ Availability Codes Avail and/or Dist Special 2 Index to FRO 80/81-3 A PROTECTION - ATOMIC Al The nuclear...aberrations in PHA-stimulated human lymphocytes in the GI stage (in English) B PROTECTION - BIOLOGICAL BI Threat scenario (119) Epidemiological aspects

Ellipsometric surface analysis of wear tracks produced by different lubricants

NASA Technical Reports Server (NTRS)

Lauer, J. L.; Marxer, N.; Jones, W. R., Jr.

1985-01-01

A scanning ellipsometer with high spatial resolution was used to analyze wear tracks generated on M-50 surfaces operated in several lubricant formulations. These formulations included a pure ester base stock of trimethyol propane triheptanoate with additives of either benzotriazole (BTZ), dioctyldiphenylamine (DODPA), or tricresylphosphate (TCP). Results indicated that BTZ and TCP produced patchy oxide surface films consisting mainly of Fe304. DOPDA produced a much more uniform oxide film. These findings may explain the tendency of lubricant formulations containing TCP to scuff more readily than those containing only antioxidants.

Ellipsometric surface analysis of wear tracks produced by different lubricants

NASA Technical Reports Server (NTRS)

Lauer, J. L.; Marxer, N.; Jones, W. R., Jr.

1985-01-01

Ellipsometric analyses of wear tracks in berings of M-50 steel were carried out after operation under severe conditions with different lubricant additives. The base lubricant was a synthetic ester. It was found that the surface and wear additives benzotirazole and tricresylyphosphate produced very patchy oxide layers. Dioctyldiphenylamine, a common antioxidant, on the other hand produced smoother films. The analyses were performed with a specially designed and constructed ellipsometer of very high (20 micron) spatial resolution. The results are consistent with data obtained by Auger electron spectroscopy.

An original method to determine complex refractive index of liquids by spectroscopic ellipsometry and illustrated applications

NASA Astrophysics Data System (ADS)

Stchakovsky, M.; Battie, Y.; Naciri, A. En

2017-11-01

We present a method to characterize optical properties of liquids by spectroscopic ellipsometry. The experiments use a specific liquid cell that avoids disturbance of waves at air-liquid interface and allows the determination of the real and the imaginary part of the refractive index, with a sensitivity of the latter below 10-4. The method is illustrated by results obtained with a spectroscopic phase modulation ellipsometer on several liquids such as deionised water, microscope oil and protein solution. Comparisons of the method with standard techniques are given.

Spectroscopic ellipsometry in vacuum ultraviolet spectral area

NASA Astrophysics Data System (ADS)

Fuchs, Detlef

An ellipsometer is developed and built, which allows the direct spectroscopic evaluation of dielectric function of solid bodies in the energy area 5 to 35 eV. A linear polarized synchrotron radiation was used as light source. The Stokes parameters and the Mueller matrices were used for the mathematical modeling, which take into account the properties of the synchrotron light and the analyzer, which depend on the wavelength. The crystals of the semiconductor bindings GaAs, GaP, InP and ZnS were examined. Ellipsometric measurements and reflection spectra show a displacement of spectral structures towards lower photon energies after the storage.

Ellipsometric Analysis of Contaminant Layer on Optical Witness Samples from MISSE

NASA Technical Reports Server (NTRS)

Norwood, Joseph K.

2007-01-01

Several optical witness samples included in the Materials for International Space Station Experiment (MISSE) trays have been analyzed with a variable angle spectroscopic ellipsometer or VASE. Witness samples of gold or platinum mirrors are extremely useful as collectors of space-borne contamination, due to the relative inertness of these noble metals in the atomic oxygen-rich environment of LEO. Highly accurate thickness measurements, typically at the sub-nanometer scale, may be achieved with this method, which uses polarized light in a spectral range of 300 to 1300 nanometers at several angles of incidence to the sample surface.

EUV polarimetry for thin film and surface characterization and EUV phase retarder reflector development.

PubMed

Gaballah, A E H; Nicolosi, P; Ahmed, Nadeem; Jimenez, K; Pettinari, G; Gerardino, A; Zuppella, P

2018-01-01

The knowledge and the manipulation of light polarization state in the vacuum ultraviolet and extreme ultraviolet (EUV) spectral regions play a crucial role from materials science analysis to optical component improvements. In this paper, we present an EUV spectroscopic ellipsometer facility for polarimetry in the 90-160 nm spectral range. A single layer aluminum mirror to be used as a quarter wave retarder has been fully characterized by deriving the optical and structural properties from the amplitude component and phase difference δ measurements. The system can be suitable to investigate the properties of thin films and optical coatings and optics in the EUV region.

Solid-state dewetting of thin Au films studied with real-time, in situ spectroscopic ellipsometry

NASA Astrophysics Data System (ADS)

Magnozzi, M.; Bisio, F.; Canepa, M.

2017-11-01

We report the design and testing of a small, high vacuum chamber that allows real-time, in situ spectroscopic ellipsometry (SE) measurements; the chamber was designed to be easily inserted within the arms of a commercial ellipsometer. As a test application, we investigated the temperature-induced solid-state dewetting of thin (20 to 8 nm) Au layers on Si wafers. In situ SE measurements acquired in real time during the heating of the samples reveal features that can be related to the birth of a localized surface plasmon resonance (LSPR), and demonstrate the presence of a temperature threshold for the solid-state dewetting.

Electrostatic self-assembly of polyions on charged substrates

NASA Astrophysics Data System (ADS)

Campbell, A.; Adams, W. W.; Bunning, T. J.; Visser, D.; Bliznyuk, V. N.; Tsukruk, V. V.

1997-03-01

The kinetics of formation of self-assembled monolayers is studied for polystyrene sulfonate(PSS) adsorbed on oppositely charged surfaces of amine terminated self-assembled monolayers(SAM) and polyallylamine(PAA). During the early stages of deposition in both cases, an inhomogeneous deposition is noted as measured by atomic force and friction force microscopy. Island formation of unperturbed PSS coils on defect sites is observed during the initial stage of deposition. Longer deposition times result in an equilibration of the polymer layers into highly flattened macromolecular chains. AFM and FFM measurements are combined with ellipsometer and X-ray reflectivity results to quantitate the layer thicknesses and roughness with time.

Refractive index modulation of Sb70Te30 phase-change thin films by multiple femtosecond laser pulses

NASA Astrophysics Data System (ADS)

Lei, Kai; Wang, Yang; Jiang, Minghui; Wu, Yiqun

2016-05-01

In this study, the controllable effective refractive index modulation of Sb70Te30 phase-change thin films between amorphous and crystalline states was achieved experimentally by multiple femtosecond laser pulses. The modulation mechanism was analyzed comprehensively by a spectral ellipsometer measurement, surface morphology observation, and two-temperature model calculations. We numerically demonstrate the application of the optically modulated refractive index of the phase-change thin films in a precisely adjustable color display. These results may provide further insights into ultrafast phase-transition mechanics and are useful in the design of programmable photonic and opto-electrical devices based on phase-change memory materials.

Optical and Scratch Resistant Properties of Diamondlike Carbon Films Deposited with Single and Dual Ion Beams

NASA Technical Reports Server (NTRS)

Kussmaul, Michael T.; Bogdanski, Michael S.; Banks, Bruce A.; Mirtich, Michael J.

1993-01-01

Amorphous diamond-like carbon (DLC) films were deposited using both single and dual ion beam techniques utilizing filament and hollow cathode ion sources. Continuous DLC films up to 3000 A thick were deposited on fused quartz plates. Ion beam process parameters were varied in an effort to create hard, clear films. Total DLC film absorption over visible wavelengths was obtained using a Perkin-Elmer spectrophotometer. An ellipsometer, with an Ar-He laser (wavelength 6328 A) was used to determine index of refraction for the DLC films. Scratch resistance, frictional, and adherence properties were determined for select films. Applications for these films range from military to the ophthalmic industries.

Optical and scratch resistant properties of diamondlike carbon films deposited with single and dual ion beams

NASA Technical Reports Server (NTRS)

Kussmaul, Michael T.; Bogdanski, Michael S.; Banks, Bruce A.; Mirtich, Michael J.

1993-01-01

Amorphous diamondlike carbon (DLC) films were deposited using both single and dual ion beam techniques utilizing filament and hollow cathode ion sources. Continuous DLC films up to 3000 A thick were deposited on fused quartz plates. Ion beam process parameters were varied in an effort to create hard, clear films. Total DLC film absorption over visible wavelengths was obtained using a Perkin-Elmer spectrophotometer. An ellipsometer, with an Ar-He laser (wavelength 6328 A) was used to determine index of refraction for the DLC films. Scratch resistance and frictional and adherence properties were determined for select films. Applications for these films range from military to the ophthalmic industries.

Optical polarimetry: Instrumentation and applications; Proceedings of the Seminar, San Diego, Calif., August 23, 24, 1977

NASA Technical Reports Server (NTRS)

Azzam, R. M. A. (Editor); Coffeen, D. L.

1977-01-01

Instrumentation used in optical polarimetry is discussed with reference to high-resolution spectropolarimetry, an orbiter cloud photopolarimeter, X-ray polarimeters, and the design of a self-nulling ellipsometer. Consideration is given to surface and thin-film ellipsometry noting studies of electrochemical surface layers, surface anisotropy, polish layers on infrared window materials, and anodic films. Papers on biological, chemical, and physical polarimetry are presented including birefringence in biological materials, vibrational optical activity, and the optical determination of the thermodynamic phase diagram of a metamagnet. Remote sensing is discussed in terms of polarization imagery, the optical polarimetry of particulate surfaces, and techniques and applications of elliptical polarimetry in astronomy and atmospheric studies.

Refractive index modulation of Sb{sub 70}Te{sub 30} phase-change thin films by multiple femtosecond laser pulses

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lei, Kai; Wang, Yang, E-mail: ywang@siom.ac.cn; Jiang, Minghui

2016-05-07

In this study, the controllable effective refractive index modulation of Sb{sub 70}Te{sub 30} phase-change thin films between amorphous and crystalline states was achieved experimentally by multiple femtosecond laser pulses. The modulation mechanism was analyzed comprehensively by a spectral ellipsometer measurement, surface morphology observation, and two-temperature model calculations. We numerically demonstrate the application of the optically modulated refractive index of the phase-change thin films in a precisely adjustable color display. These results may provide further insights into ultrafast phase-transition mechanics and are useful in the design of programmable photonic and opto-electrical devices based on phase-change memory materials.

Investigating the Electron-Phonon Coupling of Molecular Beam Epitaxy-Grown Hg1-x Cd x Se Semiconductor Alloys

NASA Astrophysics Data System (ADS)

Peiris, F. C.; Lewis, M. V.; Brill, G.; Doyle, Kevin; Myers, T. H.

2018-03-01

Using spectroscopic ellipsometry, the temperature-dependence of the dielectric functions of a series of Hg1-x Cd x Se thin films deposited on both ZnTe/Si(112) and GaSb(112) substrates were investigated. Initially, for each sample, room-temperature ellipsometric spectra were obtained from 35 meV to 6 eV using two different ellipsometers. Subsequently, ellipsometry spectra were obtained from 10 K to 300 K by incorporating a cryostat to the ellipsometer. Using a standard inversion technique, the spectroscopic ellipsometric data were modeled in order to obtain the temperature-dependent dielectric functions of each of the Hg1-x Cd x Se thin films. The results indicate that the E 1 critical point blue-shifts as a function of Cd-alloy concentration. The temperature-dependence of E 1 was fitted to a Bose-Einstein occupation distribution function, which consequently allowed us to determine the electron-phonon coupling of Hg1-x Cd x Se alloys. From the fitting results, we obtain a value of 17 ± 2 meV for the strength of the electron-phonon coupling for Hg1-x Cd x Se alloy system, which compares nominally with the binary systems, such as CdSe and CdTe, which have values around 38 meV and 16 meV, respectively. This implies that the addition of Hg into the CdSe binary system does not significantly alter its electron-phonon coupling strength. Raman spectroscopy measurements performed on all the samples show the HgSe-like transverse optic (TO) and longitudinal optic (LO) phonons (˜ 130 cm-1 and ˜ 160 cm-1, respectively) for all the samples. While there is a slight red-shift of the HgSe-like TO peak as a function of the Cd-concentration, HgSe-like LO peak does not significantly change with the alloy concentration.

Measurement of refractive indices of tunicates' tunics: light reflection of the transparent integuments in an ascidian Rhopalaea sp. and a salp Thetys vagina.

PubMed

Kakiuchida, Hiroshi; Sakai, Daisuke; Nishikawa, Jun; Hirose, Euichi

2017-01-01

Tunic is a cellulosic, integumentary matrix found in tunicates (Subphylum Tunicata or Urochordata). The tunics of some ascidian species and pelagic tunicates, such as salps, are nearly transparent, which is useful in predator avoidance. Transparent materials can be detected visually using light reflected from their surfaces, with the different refractive indices between two media, i.e., tunic and seawater, being the measure of reflectance. A larger difference in refractive indices thus provides a larger measure of reflectance. We measured the refractive indices of the transparent tunic of Thetys vagina (salp: Thaliacea) and Rhopalae a sp. (ascidian: Ascidiacea) using an Abbe refractometer and an ellipsometer to estimate the light reflection at the tunic surface and evaluate the anti-reflection effect of the nipple array structure on the tunic surface of T. vagina . At D-line light (λ = 589 nm), the refractive indices of the tunics were 0.002-0.004 greater than seawater in the measurements by Abbe refractometer, and 0.02-0.03 greater than seawater in the measurements by ellipsometer. The refractive indices of tunics were slightly higher than that of seawater. According to the simulation of light reflection based on rigorous coupled wave analysis (RCWA), light at a large angle of incidence will be completely reflected from a surface when its refractive indices are smaller than seawater. Therefore, the refractive index of integument is important for enabling transparent organisms to remain invisible in the water column. In order to minimize reflectance, the refractive index should be similar to, but never smaller than, that of the surrounding seawater. The simulation also indicated that the presence or absence of a nipple array does not cause significant difference in reflectance on the surface. The nipple array on the tunic of the diurnal salp may have another function, such as bubble repellence, other than anti-reflection.

Singular observation of the polarization-conversion effect for a gammadion-shaped metasurface

PubMed Central

Lin, Chu-En; Yen, Ta-Jen; Yu, Chih-Jen; Hsieh, Cheng-Min; Lee, Min-Han; Chen, Chii-Chang; Chang, Cheng-Wei

2016-01-01

In this article, the polarization-conversion effects of a gammadion-shaped metasurface in transmission and reflection modes are discussed. In our experiment, the polarization-conversion effect of a gammadion-shaped metasurface is investigated because of the contribution of the phase and amplitude anisotropies. According to our experimental and simulated results, the polarization property of the first-order transmitted diffraction is dominated by linear anisotropy and has weak depolarization; the first-order reflected diffraction exhibits both linear and circular anisotropies and has stronger depolarization than the transmission mode. These results are different from previously published research. The Mueller matrix ellipsometer and polar decomposition method will aid in the investigation of the polarization properties of other nanostructures. PMID:26915332

Proceedings of U. S. Workshop on the Physics and Chemistry of Mercury Cadmium Telluride and Other IR Materials, Held in Danvers, Massachusetts on October 13 - 15, 1992

DTIC Science & Technology

1992-10-15

1011 4. R.D. Feldman, D. Lee, A. Partovi, R.P. Stanley, A.M. Johnson. J.E. Zucker, A.M. Glass and J. Hegarty, Critical Rev. SolidBromine 2 x 101 State...Growth 72, 462 (1985). 63. R.L. Chou, M.S. Lin and K.S. Chou, App!. Phys. Lett. 48, 523 32. H.L. Glass , M.R. Appleby Woods, M.C. Buehnerkemper, D.L. (1986...0.0A1203 1.76 0.0 will be assumed throughout this paper unless stated TeO2 2.31 0.0 otherwise. Au 0.183 3.10 The most common usage of an ellipsometer in

PEALD grown high-k ZrO{sub 2} thin films on SiC group IV compound semiconductor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khairnar, A. G., E-mail: agkhairnar@gmail.com; Patil, V. S.; Agrawal, K. S.

The study of ZrO{sub 2} thin films on SiC group IV compound semiconductor has been studied as a high mobility substrates. The ZrO{sub 2} thin films were deposited using the Plasma Enhanced Atomic Layer Deposition System. The thickness of the thin films were measured using ellipsometer and found to be 5.47 nm. The deposited ZrO{sub 2} thin films were post deposition annealed in rapid thermal annealing chamber at temperature of 400°Ð¡. The atomic force microscopy and X-гау photoelectron spectroscopy has been carried out to study the surface topography, roughness and chemical composition of thin film, respectively.

ELLIPSOMETRY OF ELECTROCHEMICAL SURFACE LAYERS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Muller, R.H.

1977-06-01

Ellipsometry is concerned with the analysis and interpretation of changes in the state of polarization caused by reflection. The technique has found increasing interest in recent years for the measurement of thin films because it is unusually sensitive, disturbs the object minimally and can be applied to surfaces contained in any optically transparent medium. Film thicknesses amenable to measurement range from fractional monoatomic coverage to microscopic thicknesses. The measurement of changes in the state of polarization of light due to reflection provides an unusually sensitive tool for observing surface layers in any optically transparent environment. A fast, self-compensating ellipsometer hasmore » been used to observe the electrochemical formation of reacted surface layers. The optical effect of mass-transport boundary layers and component imperfections have been taken into account in the interpretation of results.« less

Ligand exchange and MIP-based paraoxon memories onto QCM sensor

NASA Astrophysics Data System (ADS)

Birlik Özkütük, Ebru; Emir Diltemiz, Sibel; Özalp, Elif; Uzun, Lokman; Ersöz, Arzu

2015-04-01

In this study, we have aimed to prepare quartz crystal microbalance (QCM) sensor using paraoxon-imprinted particles. Firstly, methacryloyl antipyrine (MAAP)-based metal-chelate-coordinated pre-complex has been prepared and used for paraoxon templation. Then, paraoxon-imprinted nanofilms were formed on QCM sensor after modification of the gold surfaces with allyl mercaptan. By this way, specific and selective memories, which depend on metal-chelate interactions between Eu(III) ions and template, for paraoxon molecules have been obtained on the electrode surface. QCM sensor has characterized using AFM and ellipsometer. The detection limit and the affinity constant have found to be 0.09 μM and 5.71 × 103 M-1 for MAAP-Eu paraoxon-based nanofilm, respectively. The specificity of the QCM sensor has shown using parathion as a competitor molecule.

Experimental study of nanofluidics and phase transitions of normal and superfluid 4He

NASA Astrophysics Data System (ADS)

Velasco, Angel Enriques

This thesis addresses the experimental results of two different research topics. The first is the experimental work of pressure driven flows in the smallest, single nanotubes ever investigated. The nanotube boundary conditions and slip lengths from argon, nitrogen, water, and helium experiments were analyzed and compared to macroscopic boundary conditions. The second research topic discusses the work on ellipsometric and quartz microbalance measurements of the 2D superfluid phase diagram of 4He on alkali substrates. Ellipsometric results of sodium on HOPG provide the first evidence of the existence of the 2D critical point on an intermediate strength substrate. Pressure driven flows through single nanopores and microtubes were measured with a calibrated mass spectrometer with pressure drops up to 30 Atm. The nanopores were between 30 nm to 600 nm in diameter and etched in mica and PET membranes of several microns thickness. Microtubes several inches long of fused quartz and nickel material were tested with diameters between 1.8 micron and 25 micron. For 4He and argon gas we observed the flow transition between the free molecular and continuum regimes at 293 K and 77 K. No discrepancy between the macroscopic theory and the 30 nm nanopore data was found. Because of the exceptionally low viscosity of gaseous helium the laminar-turbulent transition could also be observed within these submicron channels. The small viscosity of 4He was too small to dampen inertial effects at a Reynolds number of 2000. In addition to single phase gas flows, our experimental technique also allows us to investigate flows in which the nano or micro scale pipe is either partially or completely filled with liquids. The position of the intrinsic liquid/vapor interface was important for understanding this type of flow. Strong evaporation and cooling at the liquid-vapor interface can lead to freezing for conventional fluids such as nitrogen and water, which in turn leads to complex intermittent flows. The second portion of this thesis presents the experimental results on the 2D superfluid phase diagram of helium on alkali metals. A simultaneous measurement of the total and superfluid film thickness were done with a combination of a photoelastic modulated ellipsometer and a quartz crystal microbalance. Sodium and lithium films were ablated onto the gold electrodes of a QCM at 4 K. The adsorption isotherms of 4He were controlled by increasing the chemical potential from vacuum to bulk coexistence. The behavior of helium films are dependent on the strength of the substrate potential. For strong potentials such as gold and graphite the initial layers solidify while for the weaker substrate cesium films do not grow. Lithium and sodium were predicted to be intermediate in strength and for a mobile, helium film to directly grow on its surface. In addition to the superfluid transition a liquid/vapor coexistence region was predicted to also exist directly on an intermediate strength substrate. Our simultaneous QCM and ellipsometer measurements showed no clear evidence for the coexistence of 2D liquid/vapor on sodium or lithium. The gold electrodes which supported the alkali films were suspected of being too rough. We then ablated sodium on atomically smooth HOPG and the ellipsometer measured a discontinuous step at 0.5 K implying a liquid/vapor coexistence which decreased in size until it disappeared at the critical temperature T≈0.7 K. This is the first experimental evidence of a 2D critical point on sodium. (Abstract shortened by UMI.).

Performance of RF sputtered p-Si/n-ZnO nanoparticle thin film heterojunction diodes in high temperature environment

NASA Astrophysics Data System (ADS)

Singh, Satyendra Kumar; Hazra, Purnima

2017-04-01

In this article, temperature-dependent current-voltage characteristics of n-ZnO/p-Si nanoparticle thin film heterojunction diode grown by RF sputtering technique are analyzed in the temperature range of 300-433 k to investigate the performance of the device in high temperature environment. The microstructural, morphological, optical and temptrature dependent electrical properties of as-grown nanoparticle thin film were characterized by X-ray diffractometer (XRD), atomic force microscopy (AFM), field emmision scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDX), variable angle ellipsometer and semiconductor device analyzer. XRD spectra of as-grown ZnO films are exhibited that highly c-axis oriented ZnO nanostructures are grown on p- Si〈100〉 substrate whereas AFM and FESEM images confirm the homogeneous deposition of ZnO nanoparticles on surface of Si substratewith minimum roughness.The optical propertiesof as-grown ZnO nanoparticles have been measured in the spectral range of 300-800 nm using variable angle ellipsometer.To measure electrical parameters of the device prototype in the temperature range of room temperature (300 K) to 433 K, large area ohmic contacts were fabricated on both side of the ZnO/Si heterostructure. From the current-voltage charcteristics of ZnO/Si heterojunction device, it is observed that the device exhibits rectifing nature at room temperature. However, with increase in temperature, reverse saturation current and barrier height are found to increase, whereas ideality factor is started decreasing. This phenomenon confirms that barrier inhomogeneities are present at the interface of ZnO/Si heterojunction, as a result of lattice constant and thermal coefficient mismatch between Si and ZnO. Therefore, a modified value of Richardson constant [33.06 Acm-2K-2] has been extracted from the temperature-dependent electrical characteristics after assuming the Gaussian distribution of special barrier height inhomogeneities across the Si/ZnO interface which is close to its theoretical value [32 Acm-2K-2]. This result indicates that regardless of presence of barrier height inmogeneities, ZnO/Si heterojunction diode still hasability to perform well in high temperature environment.

Analysis of frequency mixing error on heterodyne interferometric ellipsometry

NASA Astrophysics Data System (ADS)

Deng, Yuan-long; Li, Xue-jin; Wu, Yu-bin; Hu, Ju-guang; Yao, Jian-quan

2007-11-01

A heterodyne interferometric ellipsometer, with no moving parts and a transverse Zeeman laser, is demonstrated. The modified Mach-Zehnder interferometer characterized as a separate frequency and common-path configuration is designed and theoretically analyzed. The experimental data show a fluctuation mainly resulting from the frequency mixing error which is caused by the imperfection of polarizing beam splitters (PBS), the elliptical polarization and non-orthogonality of light beams. The producing mechanism of the frequency mixing error and its influence on measurement are analyzed with the Jones matrix method; the calculation indicates that it results in an error up to several nanometres in the thickness measurement of thin films. The non-orthogonality has no contribution to the phase difference error when it is relatively small; the elliptical polarization and the imperfection of PBS have a major effect on the error.

Direct conversion of solar energy to thermal energy

NASA Astrophysics Data System (ADS)

Sizmann, Rudolf

1986-12-01

Selective coatings (cermets) were produced by simultaneous evaporation of copper and silicon dioxide, and analyzed by computer assisted spectral photometers and ellipsometers; hemispherical emittance was measured. Steady state test procedures for covered and uncovered collectors were investigated. A method for evaluating the transient behavior of collectors was developed. The derived transfer functions describe their transient behavior. A stochastic approach was used for reducing the meteorological data volume. Data sets which are statistically equivalent to the original data can be synthesized. A simulation program for solar systems using analytical solutions of differential equations was developed. A large solar DHW system was optimized by a detailed modular simulation program. A microprocessor assisted data aquisition records the four characteristics of solar cells and solar cell systems in less than 10 msec. Measurements of a large photovoltaic installation (50 sqm) are reported.

Al+Si Interface Optical Properties Obtained in the Si Solar Cell Configuration

DOE PAGES

Subedi, Indra; Silverman, Timothy J.; Deceglie, Michael G.; ...

2017-10-18

Al is a commonly used material for rear side metallization in commercial silicon (Si) wafer solar cells. In this study, through-the-silicon spectroscopic ellipsometry is used in a test sample to measure Al+Si interface optical properties like those in Si wafer solar cells. Two different spectroscopic ellipsometers are used for measurement of Al+Si interface optical properties over the 1128-2500 nm wavelength range. For validation, the measured interface optical properties are used in a ray tracing simulation over the 300-2500 nm wavelength range for an encapsulated Si solar cell having random pyramidal texture. The ray tracing model matches well with the measuredmore » total reflectance at normal incidence of a commercially available Si module. The Al+Si optical properties presented here enable quantitative assessment of major irradiance/current flux losses arising from reflection and parasitic absorption in encapsulated Si solar cells.« less

Evaluation and study of advanced optical contamination, deposition, measurement, and removal techniques. [including computer programs and ultraviolet reflection analysis

NASA Technical Reports Server (NTRS)

Linford, R. M. F.; Allen, T. H.; Dillow, C. F.

1975-01-01

A program is described to design, fabricate and install an experimental work chamber assembly (WCA) to provide a wide range of experimental capability. The WCA incorporates several techniques for studying the kinetics of contaminant films and their effect on optical surfaces. It incorporates the capability for depositing both optical and contaminant films on temperature-controlled samples, and for in-situ measurements of the vacuum ultraviolet reflectance. Ellipsometer optics are mounted on the chamber for film thickness determinations, and other features include access ports for radiation sources and instrumentation. Several supporting studies were conducted to define specific chamber requirements, to determine the sensitivity of the measurement techniques to be incorporated in the chamber, and to establish procedures for handling samples prior to their installation in the chamber. A bibliography and literature survey of contamination-related articles is included.

Al+Si Interface Optical Properties Obtained in the Si Solar Cell Configuration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Subedi, Indra; Silverman, Timothy J.; Deceglie, Michael G.

Al is a commonly used material for rear side metallization in commercial silicon (Si) wafer solar cells. In this study, through-the-silicon spectroscopic ellipsometry is used in a test sample to measure Al+Si interface optical properties like those in Si wafer solar cells. Two different spectroscopic ellipsometers are used for measurement of Al+Si interface optical properties over the 1128-2500 nm wavelength range. For validation, the measured interface optical properties are used in a ray tracing simulation over the 300-2500 nm wavelength range for an encapsulated Si solar cell having random pyramidal texture. The ray tracing model matches well with the measuredmore » total reflectance at normal incidence of a commercially available Si module. The Al+Si optical properties presented here enable quantitative assessment of major irradiance/current flux losses arising from reflection and parasitic absorption in encapsulated Si solar cells.« less

Perspective: Optical measurement of feature dimensions and shapes by scatterometry

NASA Astrophysics Data System (ADS)

Diebold, Alain C.; Antonelli, Andy; Keller, Nick

2018-05-01

The use of optical scattering to measure feature shape and dimensions, scatterometry, is now routine during semiconductor manufacturing. Scatterometry iteratively improves an optical model structure using simulations that are compared to experimental data from an ellipsometer. These simulations are done using the rigorous coupled wave analysis for solving Maxwell's equations. In this article, we describe the Mueller matrix spectroscopic ellipsometry based scatterometry. Next, the rigorous coupled wave analysis for Maxwell's equations is presented. Following this, several example measurements are described as they apply to specific process steps in the fabrication of gate-all-around (GAA) transistor structures. First, simulations of measurement sensitivity for the inner spacer etch back step of horizontal GAA transistor processing are described. Next, the simulated metrology sensitivity for sacrificial (dummy) amorphous silicon etch back step of vertical GAA transistor processing is discussed. Finally, we present the application of plasmonically active test structures for improving the sensitivity of the measurement of metal linewidths.

Ellipsometric study of Al2O3/Ag/Si and SiO2/Ag/quartz ashed in an oxygen plasma. [protective coatings to prevent degradation of materials in low earth orbits

NASA Technical Reports Server (NTRS)

De, Bhola N.; Woollam, John A.

1989-01-01

The growth of silver oxide (proposed as a potentially useful protective coating for space environment) on a silver mirror coated with an Al2O3 or a SiO2 protective layer was investigated using the monolayer-sensitive variable angle of incidence spectroscopic ellipsometry technique. The samples were exposed to a pure oxygen plasma in a plasma asher, and the silver oxide growth was monitored as a function of the exposure time. It was found that atomic oxygen in the asher penetrated through the SiO2 or Al2O3 coatings to convert the silver underneath to silver oxide, and that the quantity of the silver oxide formed was proportional to the ashing time. The band gap of silver oxide was determined to be 1.3 eV. A schematic diagram of the variable angle of incidence spectroscopic ellipsometer is included.

Deep and tapered silicon photonic crystals for achieving anti-reflection and enhanced absorption.

PubMed

Hung, Yung-Jr; Lee, San-Liang; Coldren, Larry A

2010-03-29

Tapered silicon photonic crystals (PhCs) with smooth sidewalls are realized using a novel single-step deep reactive ion etching. The PhCs can significantly reduce the surface reflection over the wavelength range between the ultra-violet and near-infrared regions. From the measurements using a spectrophotometer and an angle-variable spectroscopic ellipsometer, the sub-wavelength periodic structure can provide a broad and angular-independent antireflective window in the visible region for the TE-polarized light. The PhCs with tapered rods can further reduce the reflection due to a gradually changed effective index. On the other hand, strong optical resonances for TM-mode can be found in this structure, which is mainly due to the existence of full photonic bandgaps inside the material. Such resonance can enhance the optical absorption inside the silicon PhCs due to its increased optical paths. With the help of both antireflective and absorption-enhanced characteristics in this structure, the PhCs can be used for various applications.

Structural and optical study of tellurite-barium glasses

NASA Astrophysics Data System (ADS)

Grelowska, I.; Reben, M.; Burtan, B.; Sitarz, M.; Cisowski, J.; Yousef, El Sayed; Knapik, A.; Dudek, M.

2016-12-01

The goal of this work was to determine the effect of barium oxide on the structural, thermal and optical properties of the TeO2-BaO-Na2O (TBN) and TeO2-BaO-WO3 (TBW) glass systems. Raman spectra allow relating the glass structure and vibration properties (i.e. vibrational frequencies and Raman intensities) with the glass composition. Raman spectra show the presence of TeO4 and TeO3+1/TeO3 units that conform with the glass matrix. Differential thermal analysis DTA, XRD measurements have been considered in term of BaO addition. The spectral dependence of ellipsometric angles of the tellurite-barium glass has been studied. The optical measurements were conducted on Woollam M2000 spectroscopic ellipsometer in spectral range of 190-1700 nm. The reflectance and transmittance measurements have been done on spectrophotometer Perkin Elmer, Lambda 900 in the range of 200-2500 nm (UV-VIS-NIR). From the transmittance spectrum, the energy gap was determined.

Al2O3 and TiO2 atomic layer deposition on copper for water corrosion resistance.

PubMed

Abdulagatov, A I; Yan, Y; Cooper, J R; Zhang, Y; Gibbs, Z M; Cavanagh, A S; Yang, R G; Lee, Y C; George, S M

2011-12-01

Al(2)O(3) and TiO(2) atomic layer deposition (ALD) were employed to develop an ultrathin barrier film on copper to prevent water corrosion. The strategy was to utilize Al(2)O(3) ALD as a pinhole-free barrier and to protect the Al(2)O(3) ALD using TiO(2) ALD. An initial set of experiments was performed at 177 °C to establish that Al(2)O(3) ALD could nucleate on copper and produce a high-quality Al(2)O(3) film. In situ quartz crystal microbalance (QCM) measurements verified that Al(2)O(3) ALD nucleated and grew efficiently on copper-plated quartz crystals at 177 °C using trimethylaluminum (TMA) and water as the reactants. An electroplating technique also established that the Al(2)O(3) ALD films had a low defect density. A second set of experiments was performed for ALD at 120 °C to study the ability of ALD films to prevent copper corrosion. These experiments revealed that an Al(2)O(3) ALD film alone was insufficient to prevent copper corrosion because of the dissolution of the Al(2)O(3) film in water. Subsequently, TiO(2) ALD was explored on copper at 120 °C using TiCl(4) and water as the reactants. The resulting TiO(2) films also did not prevent the water corrosion of copper. Fortunately, Al(2)O(3) films with a TiO(2) capping layer were much more resilient to dissolution in water and prevented the water corrosion of copper. Optical microscopy images revealed that TiO(2) capping layers as thin as 200 Å on Al(2)O(3) adhesion layers could prevent copper corrosion in water at 90 °C for ~80 days. In contrast, the copper corroded almost immediately in water at 90 °C for Al(2)O(3) and ZnO films by themselves on copper. Ellipsometer measurements revealed that Al(2)O(3) films with a thickness of ~200 Å and ZnO films with a thickness of ~250 Å dissolved in water at 90 °C in ~10 days. In contrast, the ellipsometer measurements confirmed that the TiO(2) capping layers with thicknesses of ~200 Å on the Al(2)O(3) adhesion layers protected the copper for ~80 days in water at 90 °C. The TiO(2) ALD coatings were also hydrophilic and facilitated H(2)O wetting to copper wire mesh substrates. © 2011 American Chemical Society

In-situ ellipsometric studies of optical and surface properties of GaAs(100) at elevated temperatures

NASA Technical Reports Server (NTRS)

Yao, Huade; Snyder, Paul G.

1991-01-01

A rotating-polarizer ellipsometer was attached to an ultrahigh vacuum (UHV) chamber. A GaAs(100) sample was introduced into the UHV chamber and heated at anumber of fixed elevated temperatures, without arsenic overpressure. In-situ spectroscopic ellipsometric (SE) measurements were taken, through a pair of low-strain quartz windows, to monitor the surface changes and measure the pseudodielectric functions at elevated temperatures. Real-time data from GaAs surface covered with native oxide showed clearly the evolution of oxide desorption at approximately 580 C. In addition, surface degradation was found before and after the oxide desorption. An oxide free and smooth GaAs surface was obtained by depositing an arsenic protective coating onto a molecular beam epitaxy grown GaAs surface. The arsenic coating was evaporated immediately prior to SE measurements. A comparison showed that our room temperature data from this GaAs surface, measured in the UHV, are in good agreement with those in the literature obtained by wet-chemical etching. The surface also remained clean and smooth at higher temperatures, so that reliable temperature-dependent dielectric functions were obtained.

Initial Results of the SSPX Transient Internal Probe System for Measuring Toroidal Field Profiles

NASA Astrophysics Data System (ADS)

Holcomb, C. T.; Jarboe, T. R.; Mattick, A. T.; Hill, D. N.; McLean, H. S.; Wood, R. D.; Cellamare, V.

2000-10-01

Lawrence Livermore National Laboratory, Livermore, CA 94550, USA. The Sustained Spheromak Physics Experiment (SSPX) is using a field profile diagnostic called the Transient Internal Probe (TIP). TIP consists of a verdet-glass bullet that is used to measure the magnetic field by Faraday rotation. This probe is shot through the spheromak by a light gas gun at speeds near 2 km/s. An argon laser is aligned along the path of the probe. The light passes through the probe and is retro-reflected to an ellipsometer that measures the change in polarization angle. The measurement is spatially resolved down to the probes’ 1 cm length to within 15 Gauss. Initial testing results are given. This and future data will be used to determine the field profile for equilibrium reconstruction. TIP can also be used in conjunction with wall probes to map out toroidal mode amplitudes and phases internally. This work was performed under the auspices of US DOE by the University of California Lawrence Livermore National Laboratory under Contract No. W-7405-ENG-48.

Polarization modeling and predictions for Daniel K. Inouye Solar Telescope part 1: telescope and example instrument configurations

NASA Astrophysics Data System (ADS)

Harrington, David M.; Sueoka, Stacey R.

2017-01-01

We outline polarization performance calculations and predictions for the Daniel K. Inouye Solar Telescope (DKIST) optics and show Mueller matrices for two of the first light instruments. Telescope polarization is due to polarization-dependent mirror reflectivity and rotations between groups of mirrors as the telescope moves in altitude and azimuth. The Zemax optical modeling software has polarization ray-trace capabilities and predicts system performance given a coating prescription. We develop a model coating formula that approximates measured witness sample polarization properties. Estimates show the DKIST telescope Mueller matrix as functions of wavelength, azimuth, elevation, and field angle for the cryogenic near infra-red spectro-polarimeter (CryoNIRSP) and visible spectro-polarimeter. Footprint variation is substantial and shows vignetted field points will have strong polarization effects. We estimate 2% variation of some Mueller matrix elements over the 5-arc min CryoNIRSP field. We validate the Zemax model by showing limiting cases for flat mirrors in collimated and powered designs that compare well with theoretical approximations and are testable with lab ellipsometers.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jellison, G. E.; Aytug, T.; Lupini, A. R.

Nanostructured glass films, which are fabricated using spinodally phase-separated low-alkali glasses, have several interesting and useful characteristics, including being robust, non-wetting and antireflective. Spectroscopic ellipsometry measurements have been performed on one such film and its optical properties were analyzed using a 5-layer structural model of the near-surface region. Since the glass and the film are transparent over the spectral region of the measurement, the Sellmeier model is used to parameterize the dispersion in the refractive index. To simulate the variation of the optical properties of the film over the spot size of the ellipsometer (~ 3 × 5 mm), themore » Sellmeier amplitude is convoluted using a Gaussian distribution. The transition layers between the ambient and the film and between the film and the substrate are modeled as graded layers, where the refractive index varies as a function of depth. These layers are modeled using a two-component Bruggeman effective medium approximation where the two components are the layer above and the layer below. Lastly, the fraction is continuous through the transition layer and is modelled using the incomplete beta function.« less

The influence of voltage applied between the electrodes on optical and morphological properties of the InGaN thin films grown by thermionic vacuum arc.

PubMed

Özen, Soner; Şenay, Volkan; Pat, Suat; Korkmaz, Şadan

2016-01-01

The aim of this research is to investigate the optical and morphological properties of the InGaN thin films deposited onto amorphous glass substrates in two separate experiments with two different voltages applied between the electrodes, i.e. 500 and 600 V by means of the thermionic vacuum arc technique. This technique is original for thin film deposition and it enables thin film production in a very short period of time. The optical and morphological properties of the films were investigated by using field emission scanning electron microscope, atomic force microscope, spectroscopic ellipsometer, reflectometer, spectrophotometer, and optical tensiometer. Optical properties were also supported by empirical relations. The deposition rates were calculated as 3 and 3.3 nm/sec for 500 and 600 V, respectively. The increase in the voltage also increased the refractive index, grain size, root mean square roughness and surface free energy. According to the results of the wetting experiments, InGaN samples were low-wettable, also known as hydrophobic. © Wiley Periodicals, Inc.

Optical parameters of Ge15Sb5Se80 and Ge15Sb5Te80 from ellipsometric measurements

NASA Astrophysics Data System (ADS)

Abdel-Wahab, F.; Ashraf, I. M.; Alomairy, S. E.

2018-02-01

The optical properties of Ge15Sb5Se80 (GSS) and Ge15Sb5Te80 (GST) films prepared by thermal evaporation method were investigated in the photon energy range from 0.9 eV to 5 eV by using a variable-angle spectroscopic ellipsometer. Combinations of multiple Gaussian, and Tauc-Lorentz or Cody-Lorentz dispersion functions are used to fit the experimental data. The models' parameters (Lorentz oscillator amplitude, resonance energy, oscillator width, optical band gap, and Urbach energy) of both GSS and GST films were calculated. Refractive indices and extinction coefficients of the films were determined. Analysis of the absorption coefficient shows that the optical absorption edge of GSS and GST films to be 1.6 eV and 0.89 eV, respectively. Manca's relation based on mean bond energy and the bond statistics of chemically ordered model (COM) and random covalent network model (CRNM) is applied for the estimation of the optical band gap (Eg) of the investigated films. A good agreement between experimental and calculated Eg is obtained.

The study of multilayer anti-reflection coating in InSb focal plane detector

NASA Astrophysics Data System (ADS)

Zheng, Kelin; Wei, Peng; Wang, Liwen; Su, Xianjun; Wang, Haizhen

2016-10-01

In manufacturing of InSb focal plane detector, InSb chip have to be polished from backside to reduce its thickness and then be plated a layer of coating to decrease its reflection (enhance its transmittance) for infrared ray. Moreover, the anti-reflection coating has to be multilayer for more anti-reflection bandwidth. In this article, it is introduced that the optimal design of triple layer λ/4 anti-reflection coating——the anodic oxide, SiNx and MgF2. The best thickness range of each layer and its theoretical reflective index are calculated from simulation software, until the refractive index of each layer has been measured by ellipsometer. And then the transmissivity and reflectivity of the triple layer coating are measured for testing and verifying its performance on the transmittance and reflection. In the end, the anti-reflective effect of the triple layer coating and monolayer SiNx coating are respectively measured and compared by infrared focal plane array measurement system. And it is showed that this triple layer coating achieved more anti-reflection bandwidth and better anti reflective effect.

Experimental results on atomic oxygen corrosion of silver

NASA Technical Reports Server (NTRS)

Fromhold, Albert T.

1988-01-01

The results of an experimental study of the reaction kinetics of silver with atomic oxygen in 10 degree increments over the temperature range of 0 to 70 C is reported. The silver specimens, of the order of 10,000 A in thickness, were prepared by thermal evaporation onto 3 inch diameter polished silicon wafers. There were later sliced into pieces having surface areas of the order of 1/4 to 1/2 square inch. Atomic oxygen was generated by a gas discharge in a commercial plasmod asher operating in the megahertz frequency range. The sample temperature within the chamber was controlled by means of a thermoelectric unit. Exposure of the silver specimens to atomic oxygen was incremental, with oxide film thickness measurements being carried out between exposures by means of an automated ellipsometer. For the early growth phase, the data can be described satisfactorily by a logarithmic growth law: the oxide film thickness increases as the logarithm of the exposure time. Furthermore, the oxidation process is thermally activated, the rate increasing with increasing temperature. However, the empirical activation energy parameter deduced from Arrhenius plots is quite low, being of the order of 0.1 eV.

Deposition of porous low-k thin films using Tween 80 porogen for ILD application in ULSI circuits

NASA Astrophysics Data System (ADS)

Mhaisagar, Yogesh S.; Kawishwar, Renuka; Joshi, Bhavana N.; Mahajan, A. M.

2012-10-01

The porous silica low-k thin films were deposited by using Sol-gel spin coating technique. The tetraethylorthosilicate (TEOS) was used as a source of Si and the porogen Tween 80 was used for the introduction of porosity of the films. The chemical bondings of porous low-k SiO2 films have been realized by using Fourier transform infrared spectroscopy (FT-IR). The appearance of stretching, bending and rocking peaks at 1075.8, 967, 426 cm-1 respectively confirms the formation of Si-O-Si network. The Refractive index (RI) and thickness of the films were determined by using ellipsometer. Further, from RI the density and porosity of the films was estimated using standard formula. As from results it's seems that the density of the films reduces after the addition of Tween 80. The lowest value of films density after the addition of Tween 80 was found to be 1.27 g/cm3. The reduction in the film density results in increase of the porosity of films due to the removal of porogen during the curing. The increase in film porosity from 6% to 45% resulted in lower in the dielectric constant to 2.58.

Optical properties of a nanostructured glass-based film using spectroscopic ellipsometry

DOE PAGES

Jellison, G. E.; Aytug, T.; Lupini, A. R.; ...

2015-12-22

Nanostructured glass films, which are fabricated using spinodally phase-separated low-alkali glasses, have several interesting and useful characteristics, including being robust, non-wetting and antireflective. Spectroscopic ellipsometry measurements have been performed on one such film and its optical properties were analyzed using a 5-layer structural model of the near-surface region. Since the glass and the film are transparent over the spectral region of the measurement, the Sellmeier model is used to parameterize the dispersion in the refractive index. To simulate the variation of the optical properties of the film over the spot size of the ellipsometer (~ 3 × 5 mm), themore » Sellmeier amplitude is convoluted using a Gaussian distribution. The transition layers between the ambient and the film and between the film and the substrate are modeled as graded layers, where the refractive index varies as a function of depth. These layers are modeled using a two-component Bruggeman effective medium approximation where the two components are the layer above and the layer below. Lastly, the fraction is continuous through the transition layer and is modelled using the incomplete beta function.« less

Ellipsometric study of YBa2Cu3O(7-x) laser ablated and co-evaporated films

NASA Technical Reports Server (NTRS)

Alterovitz, S. A.; Sieg, R. E.; Warner, J. D.; Stan, M. A.; Vitta, S.

1990-01-01

High temperature superconducting films of YBa2Cu3O(7-x) (YBCO were grown on SrTiO3, LaA1O3, and YSZ substrates using two techniques: excimer laser ablation with in situ annealing and co-evaporation of Y, Cu, and BaF2 with ex-situ annealing. Film thicknesses were typically 5000 A, with predominant c-axis alignment perpendicular to the substrate. Critical temperatures up to Tc(R=O)=90 K were achieved by both techniques. Ellipsometric measurements were taken in the range 1.6 to 4.3 eV using a variable angle spectroscopic ellipsometer. The complex dielectric function of the laser ablated films was reproducible from run to run, and was found to be within 10 percent of that previously reported for (001) oriented single crystals. A dielectric overlayer was observed in these films, with an index of refraction of approximately 1.55 and nearly zero absorption. For the laser ablated films the optical properties were essentially independent of substrate material. The magnitude of the dielectric function obtained for the co-evaported films was much lower than the value reported for single crystals, and was sample dependent.

In situ spectroscopic ellipsometry study of low-temperature epitaxial silicon growth

NASA Astrophysics Data System (ADS)

Halagačka, L.; Foldyna, M.; Leal, R.; Roca i Cabarrocas, P.

2018-07-01

Low-temperature growth of doped epitaxial silicon layers is a promising way to reduce the cost of p-n junction formation in c-Si solar cells. In this work, we study process of highly doped epitaxial silicon layer growth using in situ spectroscopic ellipsometry. The film was deposited by plasma-enhanced chemical vapor deposition (PECVD) on a crystalline silicon substrate at a low substrate temperature of 200 °C. In the deposition process, SiF4 was used as a precursor, B2H6 as doping gas, and a hydrogen/argon mixture as carrier gas. A spectroscopic ellipsometer with a wide spectral range was used for in situ spectroscopic measurements. Since the temperature during process is 200 °C, the optical functions of silicon differ from these at room temperature and have to be adjusted. Thickness of the epitaxial silicon layer was fitted on in situ ellipsometric data. As a result we were able to determine the dynamics of epitaxial layer growth, namely initial layer formation time and epitaxial growth rate. This study opens new perspectives in understanding and monitoring the epitaxial silicon deposition processes as the model fitting can be applied directly during the growth.

Molecularly imprinted polymer based quartz crystal microbalance sensor system for sensitive and label-free detection of synthetic cannabinoids in urine.

PubMed

Battal, Dilek; Akgönüllü, Semra; Yalcin, M Serkan; Yavuz, Handan; Denizli, Adil

2018-07-15

Herein, we prepared a novel quartz crystal microbalance (QCM) sensor for synthetic cannabinoids (JWH-073, JWH-073 butanoic acid, JWH-018 and JWH-018 pentanoic acid,) detection. Firstly, the synthetic cannabinoid (SCs) imprinted (MIP) and non-imprinted (NIP) nanoparticles were synthesized by mini-emulsion polymerization system. The SCs-imprinted nanoparticles were first characterized by SEM, TEM, zeta-size and FTIR-ATR analysis and then were dropped onto the gold QCM surface. The SCs-imprinted QCM sensor was characterized by an ellipsometer, contact angle, and AFM. The limit of detection was found as 0.3, 0.45, 0.4, 0.2 pg/mL JWH-018, JWH-073, JWH-018 pentanoic acid and JWH-073 butanoic acid, respectively. The selectivity of the SCs-imprinted QCM sensor was shown by using JWH-018, JWH-018 pentanoic acid, JWH-073 and JWH-073 butanoic acid. According to the results, the SCs-imprinted QCM sensors show highly selective and sensitive in a broad range of synthetic cannabinoid concentrations (0.0005-1.0 ng/mL) in both aqueous and synthetic urine solutions. Copyright © 2018 Elsevier B.V. All rights reserved.

Optical and other property changes of M-50 bearing steel surfaces for different lubricants and additive prior to scuffing

NASA Technical Reports Server (NTRS)

Lauer, J. L.; Marxer, N.

1984-01-01

An ester lubricant base oil containing one or more standard additives to protect against wear, corrosion, and oxidation was used in an experimental ball/plate elastohydrodynamic contact under load and speed conditions such as to induce scuffing failure in short times. Both the ball and the plate were of identically treated M-50 steel. After various periods of operating time the wear track on the plate was examined with an interference microscope of plus or minus 30 A depth resolution and sometimes also with a scanning ellipsometer and an Auger spectrometer. The optically deduced surface profiles varied with wavelength, indicating the presence of surface coatings, which were confirmed by the other instruments. As scuffing was approached, a thin (approximately A) oxide layer and a carbide layer formed in the wear track in particular when tricresylphosphate antiwear additive was present in the lubricant. The rates of the formation of these layers and their reactivity toward dilute alcholic HCl depended strongly on the lubricant and additives. Based on these results suggestions for improved formulations and a test method for bearing reliability could be proposed.

Microscopic image processing systems for measuring nonuniform film thickness profiles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, A.H.; Plawsky, J.L.; DasGupta, S.

1994-01-01

In very thin liquid films. transport processes are controlled by the temperature and the interfacial intermolecular force field which is a function of the film thickness profile and interfacial properties. The film thickness profile and interfacial properties can be measured most efficiently using a microscopic image processing system. IPS, to record the intensity pattern of the reflected light from the film. There are two types of IPS: an image analyzing interferometer (IAI) and/or an image scanning ellipsometer (ISE). The ISE is a novel technique to measure the two dimensional thickness profile of a nonuniform, thin film, from 1 nm upmore » to several {mu}m, in a steady state as well as in a transient state. It is a full field imaging technique which can study every point on the surface simultaneously with high spatial resolution and thickness sensitivity, i.e., it can measure and map the 2-D film thickness profile. Using the ISE, the transient thickness profile of a draining thin liquid film was measured and modeled. The interfacial conditions were determined in situ by measuring the Hamaker constant. The ISE and IAI systems are compared.« less

Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Mengdi, E-mail: M.Yang@utwente.nl; Aarnink, Antonius A. I.; Kovalgin, Alexey Y.

2016-01-15

In this work, the authors developed hot-wire assisted atomic layer deposition (HWALD) to deposit tungsten (W) with a tungsten filament heated up to 1700–2000 °C. Atomic hydrogen (at-H) was generated by dissociation of molecular hydrogen (H{sub 2}), which reacted with WF{sub 6} at the substrate to deposit W. The growth behavior was monitored in real time by an in situ spectroscopic ellipsometer. In this work, the authors compare samples with tungsten grown by either HWALD or chemical vapor deposition (CVD) in terms of growth kinetics and properties. For CVD, the samples were made in a mixture of WF{sub 6} and molecularmore » or atomic hydrogen. Resistivity of the WF{sub 6}-H{sub 2} CVD layers was 20 μΩ·cm, whereas for the WF{sub 6}-at-H-CVD layers, it was 28 μΩ·cm. Interestingly, the resistivity was as high as 100 μΩ·cm for the HWALD films, although the tungsten films were 99% pure according to x-ray photoelectron spectroscopy. X-ray diffraction reveals that the HWALD W was crystallized as β-W, whereas both CVD films were in the α-W phase.« less

Investigations on structural and electrical parameters of p-Si/ MgxZn1-xO thin film heterojunction diodes grown by RF magnetron sputtering technique

NASA Astrophysics Data System (ADS)

Singh, Satyendra Kumar; Hazra, Purnima

2018-05-01

This work reports fabrication and characterization of p-Si/ MgxZn1-xO thin film heterojunction diodes grown by RF magnetron sputtering technique. In this work, ZnO powder was mixed with MgO powder at per their weight percentage from 0 to 10% to prepare MgxZn1-xO target. The microstructural, surface morphological and optical properties of as-deposited p-Si/MgxZn1-xO heterostructure thin films have been studied using X-ray Diffraction, atomic force microscopy and variable angle ellipsometer. XRD spectra exhibit that undoped ZnO thin films has preferred crystal orientation in (002) plane. However, with increase in Mg-doping, ZnO (101) crystal plane is enhanced progressively due to phase segregation, even though preferred growth orientation of ZnO crystals is still towards (002) plane. The electrical characteristics of Si/ MgxZn1-xO heterojunction diodes with large area Al/Ti ohmic contacts are evaluated using semiconductor parameter analyzer. With rectification ratio of 27894, reverse saturation current of 20.5 nA and barrier height of 0.724 eV, Si/Mg0.5Zn0.95O thin film heterojunction diode is believed to have potential to be used in wider bandgap nanoelectronic device applications.

Material growth and characterization for solid state devices

NASA Technical Reports Server (NTRS)

Stefanakos, E. K.; Collis, W. J.; Abul-Fadl, A.; Iyer, S.

1984-01-01

Manganese was used as the dopant for p-type InGaAs layers grown on semi-insulating (Fe-doped) and n-type (Sn-doped) InP substrates. Optical, electrical (Hall) and SIMS measurements were used to characterize the layers. Mn-diffusion into the substrate (during the growth of In GaAs) was observed only when Fe-doped substrates were used. Quaternary layers of two compositions corresponding to wavelengths (energy gaps) of approximated 1.52 micrometers were successfully grown at a constant temperature of 640 C and InP was grown in the temperature range of 640 C to 655 C. A study of the effect of pulses on the growth velocity of InP indicated no significant change as long as the average applied current was kept constant. A system for depositing films of Al2O3 by the pyrolysis of aluminum isopropoxide was designed and built. Deposited layers on Si were characterized with an ellipsometer and exhibited indices of refraction between 1.582 and 1.622 for films on the order of 3000 A thick. Undoped and p-type (Mn-doped) InGaAs epitaxial layers were also grown on Fe-doped InP substrates through windows in sputtered SiO2 (3200 A thick) layers.

Effect of surface oxidation on emissivity properties of pure aluminum in the near infrared region

NASA Astrophysics Data System (ADS)

Zhang, Kaihua; Yu, Kun; Liu, Yufang; Zhao, Yuejin

2017-08-01

Emissivity is a basic thermo physical property of materials and determines the precision of radiation thermometry. The aim of this paper is to study the effect of surface oxidation on the infrared emissivity properties of pure aluminum. The emissivity data presented in this study covers the spectral range between 0.8 and 2.2 µm and temperatures from 473 to 873 K. The samples with different oxidation time were prepared under a controlled environment. The morphology and composition of the samples were characterized by metallographic microscope and XRD techniques before and after oxidation. The thickness of oxide film with different oxidation time was accurately measured by spectroscopic ellipsometer and a parabolic growth was found. In addition, the interference model of an oxidized metal substrate is established to explain the influence of the oxide film thickness on the emissivity. The thickness of oxide film when the interference effect occurs was calculated according to the interference model. The data shows that the maximum value measured was less than the thickness value at the first order constructive interference. Neither peaks nor valleys were observed in emissivity measurements with different oxidation time at 873 K, which could be related to the thin oxide film on sample surface.

Materials, structures, and devices for high-speed electronics

NASA Technical Reports Server (NTRS)

Woollam, John A.; Snyder, Paul G.

1992-01-01

Advances in materials, devices, and instrumentation made under this grant began with ex-situ null ellipsometric measurements of simple dielectric films on bulk substrates. Today highly automated and rapid spectroscopic ellipsometers are used for ex-situ characterization of very complex multilayer epitaxial structures. Even more impressive is the in-situ capability, not only for characterization but also for the actual control of the growth and etching of epitaxial layers. Spectroscopic ellipsometry has expanded from the research lab to become an integral part of the production of materials and structures for state of the art high speed devices. Along the way, it has contributed much to our understanding of the growth characteristics and material properties. The following areas of research are summarized: Si3N4 on GaAs, null ellipsometry; diamondlike carbon films; variable angle spectroscopic ellipsometry (VASE) development; GaAs-AlGaAs heterostructures; Ta-Cu diffusion barrier films on GaAs; GaAs-AlGaAs superlattices and multiple quantum wells; superconductivity; in situ elevated temperature measurements of III-V's; optical constants of thermodynamically stable InGaAs; doping dependence of optical constants of GaAs; in situ ellipsometric studies of III-V epitaxial growth; photothermal spectroscopy; microellipsometry; and Si passivation and Si/SiGe strained-layer superlattices.

Mode-splitting of a non-polarizing guided mode resonance filter by substrate overetching effect

NASA Astrophysics Data System (ADS)

Saleem, Muhammad Rizwan; Honkanen, Seppo; Turunen, Jari

2014-03-01

We investigate substrate overetch effect on resonance properties of sub-wavelength titanium oxide (TiO2) Guided Mode Resonance Filters (TiO2-GMRFs). The TiO2-GMRF is designed and fabricated to possess a non-polarizing behavior, which is strongly dependent on substrate (fused silica) overetch depth. For non-polarizing gratings at resonance, TE- and TM-modes have the same propagation constants. However, an overetch substrate effect results in splitting of the degenerate modes, which is studied theoretically and experimentally. The TiO2-SiO2 GMRFs are designed by Fourier Modal method (FMM) based on the rigorous calculation of electromagnetic diffraction theory at a designed wavelength of 850 nm. The TiO2-SiO2 gratings are fabricated by Atomic Layer Deposition (ALD), Electron Beam Lithography (EBL), and Reactive Ion Etching (RIE), and they are subsequently characterized structurally by Scanning Electron Microscopy (SEM) and optically by a spectroscopic ellipsometer. Several grating samples are fabricated by gradually increasing the overetch depth into fused silica and measuring the extent of TE- and TM-mode-splitting. A close agreement between the calculated and experimentally measured resonance wavelength spectral shift is found to describe the mode splitting of non-polarizing gratings.

Long Duration Space Materials Exposure (LDSE)

NASA Technical Reports Server (NTRS)

Allen, David; Schmidt, Robert

1992-01-01

The Center on Materials for Space Structures (CMSS) at Case Western Reserve University is one of seventeen Commercial Centers for the Development of Space. It was founded to: (1) produce and evaluate materials for space structures; (2) develop passive and active facilities for materials exposure and analysis in space; and (3) develop improved material systems for space structures. A major active facility for materials exposure is proposed to be mounted on the exterior truss of the Space Station Freedom (SSF). This Long Duration Space Materials Exposure (LDSE) experiment will be an approximately 6 1/2 ft. x 4 ft. panel facing into the velocity vector (RAM) to provide long term exposure (up to 30 years) to atomic oxygen, UV, micro meteorites, and other low earth orbit effects. It can expose large or small active (instrumented) or passive samples. These samples may be mounted in a removable Materials Flight Experiment (MFLEX) carrier which may be periodically brought into the SSF for examination by CMSS's other SSF facility, the Space Materials Evaluation Facility (SMEF), which will contain a Scanning Electron Microscope, a Variable Angle & Scanning Ellipsometer, a Fourier Transform Infrared Spectrometer, and other analysis equipment. These facilities will allow commercial firms to test their materials in space and promptly obtain information on their materials survivability in the LEO environment.

ELLIPSOMETRIC MEASUREMENTS OF THE THERMAL STABILITY OF ALTERNATIVE FUELS

PubMed Central

Nash, Leigh; Klettlinger, Jennifer; Vasu, Subith

2017-01-01

Thermal stability is an important characteristic of alternative fuels that must be evaluated before they can be used in aviation engines. Thermal stability refers to the degree to which a fuel breaks down when it is heated prior to combustion. This characteristic is of great importance to the effectiveness of the fuel as a coolant and to the engine’s combustion performance. The thermal stability of Sasol IPK, a synthetic alternative to Jet-A, with varying levels of naphthalene has been studied on aluminum and stainless steel substrates at 300 to 400 °C. This was conducted using a spectroscopic ellipsometer to measure the thickness of deposits left on the heated substrates. Ellipsometry is an optical technique that measures the changes in a light beam’s polarization and intensity after it reflects from a thin film to determine the film’s physical and optical properties. It was observed that, as would be expected, increasing the temperature minimally increased the deposit thickness for a constant concentration of naphthalene on both substrates. The repeatability of these measurements was verified using multiple trials at identical test conditions. Lastly, the effect of increasing the naphthalene concentration at a constant temperature was found to also minimally increase the deposit thickness. PMID:28966427

Surface plasmon resonance and nonlinear optical behavior of pulsed laser-deposited semitransparent nanostructured copper thin films

NASA Astrophysics Data System (ADS)

Kesarwani, Rahul; Khare, Alika

2018-06-01

In this paper, surface plasmon resonance (SPR) and nonlinear optical properties of semitransparent nanostructured copper thin films fabricated on the glass substrate at 400 °C by pulsed laser deposition technique are reported. The thickness, linear absorption coefficient and linear refractive index of the films were measured by spectroscopic ellipsometer. The average particle size as measured via atomic force microscope was in the range of 12.84-26.02 nm for the deposition time ranging from 5 to 10 min, respectively. X-ray diffraction spectra revealed the formation of Cu (111) and Cu (200) planes. All these thin films exhibited broad SPR peak. The third-order optical nonlinearity of all the samples was investigated via modified z-scan technique using cw laser at a wavelength of 632.8 nm. The open aperture z-scan spectra of Cu thin film deposited for 5 min duration exhibited reverse saturation absorption whereas all the other samples displayed saturation absorption behavior. The nonlinear refractive index coefficient of these films showed a positive sign having the magnitude of the order of 10- 4 cm/W. The real and imaginary parts of susceptibilities were also calculated from the z-scan data and found to be of the order of 10- 6 esu.

Optical constants of electroplated gold from spectroscopic ellipsometry

NASA Astrophysics Data System (ADS)

Synowicki, R. A.; Herzinger, Craig M.; Hall, James T.; Malingowski, Andrew

2017-11-01

The optical constants of an opaque electroplated gold film (Laser Gold from Epner Technology Inc.), were determined by spectroscopic ellipsometry at room temperature over the spectral range from 0.142 μm in the vacuum ultraviolet to 36 μm in the infrared (photon energy range 0.034-8.75 eV). Data from two separate ellipsometer instruments covering different spectral ranges were analyzed simultaneously. The optical constants n&k or ε1&ε2 were determined by fitting an oscillator dispersion model combining Drude, Gaussian, and Sellmeier dispersion functions to the experimental Ψ and Δ data. The data were analyzed using both an ideal bulk substrate model and a simple overlayer model to account for surface roughness. Including the optical surface roughness layer improved ellipsometric data fits in the UV, and using a separate Drude function for the surface layer improved fits in the infrared. The surface roughness was also characterized using an Atomic Force Microscope. Using an oscillator dispersion model for the optical constants determined in this work allows for more realistic extrapolation to longer infrared wavelengths. Extending optical constants out to 50 μm and beyond is important for calibrating far-infrared reflectance measurements. Applications include understanding the thermal performance of cryogenic space-based instruments, such as the James Webb Space Telescope (JWST).

Electrochemical impedance spectroscopy based-on interferon-gamma detection

NASA Astrophysics Data System (ADS)

Li, Guan-Wei; Kuo, Yi-Ching; Tsai, Pei-I.; Lee, Chih-Kung

2014-03-01

Tuberculosis (TB) is an ancient disease constituted a long-term menace to public health. According to World Health Organization (WHO), mycobacterium tuberculosis (MTB) infected nearly a third of people of the world. There is about one new TB occurrence every second. Interferon-gamma (IFN-γ) is associated with susceptibility to TB, and interferongamma release assays (IGRA) is considered to be the best alternative of tuberculin skin test (TST) for diagnosis of latent tuberculosis infection (LTBI). Although significant progress has been made with regard to the design of enzyme immunoassays for IFN-γ, adopting this assay is still labor-intensive and time-consuming. To alleviate these drawbacks, we used IFN-γ antibody to facilitate the detection of IFN-γ. An experimental verification on the performance of IGRA was done in this research. We developed two biosensor configurations, both of which possess high sensitivity, specificity, and rapid IFN-γ diagnoses. The first is the electrochemical method. The second is a circular polarization interferometry configuration, which incorporates two light beams with p-polarization and s-polarization states individually along a common path, a four photo-detector quadrature configuration to arrive at a phase modulated ellipsometer. With these two methods, interaction between IFN-γ antibody and IFN-γ were explored and presented in detail.

Carbon nanotube fiber terahertz polarizer

NASA Astrophysics Data System (ADS)

Zubair, Ahmed; Tsentalovich, Dmitri E.; Young, Colin C.; Heimbeck, Martin S.; Everitt, Henry O.; Pasquali, Matteo; Kono, Junichiro

2016-04-01

Conventional, commercially available terahertz (THz) polarizers are made of uniformly and precisely spaced metallic wires. They are fragile and expensive, with performance characteristics highly reliant on wire diameters and spacings. Here, we report a simple and highly error-tolerant method for fabricating a freestanding THz polarizer with nearly ideal performance, reliant on the intrinsically one-dimensional character of conduction electrons in well-aligned carbon nanotubes (CNTs). The polarizer was constructed on a mechanical frame over which we manually wound acid-doped CNT fibers with ultrahigh electrical conductivity. We demonstrated that the polarizer has an extinction ratio of ˜-30 dB with a low insertion loss (<0.5 dB) throughout a frequency range of 0.2-1.1 THz. In addition, we used a THz ellipsometer to measure the Müller matrix of the CNT-fiber polarizer and found comparable attenuation to a commercial metallic wire-grid polarizer. Furthermore, based on the classical theory of light transmission through an array of metallic wires, we demonstrated the most striking difference between the CNT-fiber and metallic wire-grid polarizers: the latter fails to work in the zero-spacing limit, where it acts as a simple mirror, while the former continues to work as an excellent polarizer even in that limit due to the one-dimensional conductivity of individual CNTs.

PDMS spreading morphological patterns on substrates of different hydrophilicity in air vacuum and water.

PubMed

Zbik, Marek S; Frost, Ray L

2010-04-15

In paper has been to investigate the morphological patterns and kinetics of PDMS spreading on silicon wafer using combination of techniques like ellipsometry, atomic force microscope (AFM), scanning electron microscope (SEM) and optical microscopy. A macroscopic silicone oil drops as well as PDMS water based emulsions were studied after deposition on a flat surface of silicon wafer in air, water and vacuum. Our own measurements using an imaging ellipsometer, which also clearly shows the presence of a precursor film. The diffusion constant of this film, measured with a 60,000 cS PDMS sample spreading on a hydrophilic silicon wafer is D(f)=1.4x10(-11) m(2)/s. Regardless of their size, density and method of deposition, droplets on both types of wafer (hydrophilic and hydrophobic) flatten out over a period of many hours, up to 3 days. During this process neighbouring droplets may coalesce, but there is strong evidence that some of the PDMS from the droplets migrates into a thin, continuous film that covers the surface in between droplets. The thin film appears to be ubiquitous if there has been any deposition of PDMS. However, this statement needs further verification. One question is whether the film forms immediately after forced drying, or whether in some or all cases it only forms by spreading from isolated droplets as they slowly flatten out. 2010 Elsevier Inc. All rights reserved.

Measurements of vacuum magnetic birefringence using permanent dipole magnets: the PVLAS experiment

NASA Astrophysics Data System (ADS)

Della Valle, F.; Gastaldi, U.; Messineo, G.; Milotti, E.; Pengo, R.; Piemontese, L.; Ruoso, G.; Zavattini, G.

2013-05-01

The PVLAS collaboration is presently assembling a new apparatus (at the INFN section of Ferrara, Italy) to detect vacuum magnetic birefringence (VMB). VMB is related to the structure of the quantum electrodynamics (QED) vacuum and is predicted by the Euler-Heisenberg-Weisskopf effective Lagrangian. It can be detected by measuring the ellipticity acquired by a linearly polarized light beam propagating through a strong magnetic field. Using the very same optical technique it is also possible to search for hypothetical low-mass particles interacting with two photons, such as axion-like (ALP) or millicharged particles. Here we report the results of a scaled-down test setup and describe the new PVLAS apparatus. This latter is in construction and is based on a high-sensitivity ellipsometer with a high-finesse Fabry-Perot cavity (>4 × 105) and two 0.8 m long 2.5 T rotating permanent dipole magnets. Measurements with the test setup have improved, by a factor 2, the previous upper bound on the parameter Ae, which determines the strength of the nonlinear terms in the QED Lagrangian: A(PVLAS)e < 3.3 × 10-21 T-2 at 95% c.l. Furthermore, new laboratory limits have been put on the inverse coupling constant of ALPs to two photons and confirmation of previous limits on the fractional charge of millicharged particles is given.

The Electric, Magnetic, and Optical Characterization of Permalloy Oxide Grown by Dual-Ion Beam Sputtering

NASA Astrophysics Data System (ADS)

Compton, Maclyn; Leblanc, Elizabeth; Geerts, Wilhelmus; Simpson, Nelson; Robinson, Michael

2014-03-01

Permalloy (Ni80Fe20) is a commonly used soft magnetic material in magnetic reading heads. Its magnetic properties do not depend on stress, a parameter difficult to control in thin film devices. Permalloy Oxide (PyO) on the other hand, has a high resistivity (>4 .103 Ω cm), is anti-ferromagnetic and has recently been shown to strongly enhance the performance of lateral spin valve devices. Historically, the oxidation of permalloy has been seen as a defect that should be avoided by appropriate encapsulation and very little is known on its electric and optical properties. We deposited thin PyO films by Dual Ion Beam Sputtering (DIBS) at room temperature on various substrates. Van der Pauw and Hall measurements were carried out from 77K to 400K and at magnetic fields up to 9T in order to determine its electronic bandgap, resistivity, free carrier concentration, and its mobility. The dielectric properties and defects were studied using a CV-setup and an impedance analyzer. Magnetic measurements were conducted on a Quantum Design PPMS VSM to determine the state of oxidation. Optical properties were measured by a M2000 Woollam variable angle spectroscopic ellipsometer. These properties were used to determine film thickness, bandgap and the optical constants of PyO. The authors would like to thank Research Corporation for financial support.

The influence of Atomic Oxygen on the Figure of Merit of Indium Tin Oxide thin Films grown by reactive Dual Ion Beam Sputtering

NASA Astrophysics Data System (ADS)

Geerts, Wilhelmus; Simpson, Nelson; Woodall, Allen; Compton, Maclyn

2014-03-01

Indium Tin Oxide (ITO) is a transparent conducting oxide that is used in flat panel displays and optoelectronics. Highly conductive and transparent ITO films are normally produced by heating the substrate to 300 Celsius during deposition excluding plastics to be used as a substrate material. We investigated whether high quality ITO films can be sputtered at room temperature using atomic instead of molecular oxygen. The films were deposited by dual ion beam sputtering (DIBS). During deposition the substrate was exposed to a molecular or an atomic oxygen flux. Microscope glass slides and silicon wafers were used as substrates. A 29 nm thick SIO2 buffer layer was used. Optical properties were measured with a M2000 Woollam variable angle spectroscopic ellipsometer. Electrical properties were measured by linear four point probe using a Jandel 4pp setup employing silicon carbide electrodes, high input resistance, and Keithley low bias current buffer amplifiers. The figure of merit (FOM), i.e. the ratio of the conductivity and the average optical absorption coefficient (400-800 nm), was calculated from the optical and electric properties and appeared to be 1.2 to 5 times higher for the samples sputtered with atomic oxygen. The largest value obtained for the FOM was 0.08 reciprocal Ohms. The authors would like to thank the Research Corporation for Financial Support.

Optical Diagnostics of Solution Crystal Growth

NASA Technical Reports Server (NTRS)

Kim, Yongkee; Reddy, B. R.; George, T. G.; Lal, R. B.

1996-01-01

Non-contact optical techniques such as, optical heterodyne, ellipsometry and interferometry, for real time in-situ monitoring of solution crystal growth are demonstrated. Optical heterodyne technique has the capability of measuring the growth rate as small as 1A/sec. In a typical Michelson interferometer set up, the crystal is illuminated by a Zeeman laser with frequency omega(sub 1) and the reference beam with frequency omega(sub 2). As the crystal grows, the phase of the rf signal changes with respect to the reference beam and this phase change is related to the crystal growth rate. This technique is demonstrated with two examples: (1) by measuring the copper tip expansion/shrinkage rate and (2) by measuring the crystal growth rate of L-Arginine Phosphate (LAP). The first test shows that the expansion/shrinkage rate of copper tip was fast in the beginning, and gets slower as the expansion begins to stabilize with time. In crystal growth, the phase change due the crystal growth is measured using a phase meter and a strip chart recorder. Our experimental results indicate a varied growth rate from 69.4 to 92.6A per sec. The ellipsometer is used to study the crystal growth interface. From these measurements and a theoretical modeling of the interface, the various optical parameters can be deduced. Interferometry can also be used to measure the growth rate and concentration gradient in the vicinity of the crystal.

Study on deposition of Al2O3 films by plasma-assisted atomic layer with different plasma sources

NASA Astrophysics Data System (ADS)

Haiying, WEI; Hongge, GUO; Lijun, SANG; Xingcun, LI; Qiang, CHEN

2018-04-01

In this paper, Al2O3 thin films are deposited on a hydrogen-terminated Si substrate by using two home-built electron cyclotron resonance (ECR) and magnetic field enhanced radio frequency plasma-assisted atomic layer deposition (PA-ALD) devices with Al(CH3)3 (trimethylaluminum, TMA) and oxygen plasma used as precursor and oxidant, respectively. The thickness, chemical composition, surface morphology and group reactions are characterized by in situ spectroscopic ellipsometer, x-ray photoelectric spectroscopy, atomic force microscopy, scanning electron microscopy, a high-resolution transmission electron microscope and in situ mass spectrometry (MS), respectively. We obtain that both ECR PA-ALD and the magnetic field enhanced PA-ALD can deposit thin films with high density, high purity, and uniformity at a high deposition rate. MS analysis reveals that the Al2O3 deposition reactions are not simple reactions between TMA and oxygen plasma to produce alumina, water and carbon dioxide. In fact, acetylene, carbon monoxide and some other by-products also appear in the exhaustion gas. In addition, the presence of bias voltage has a certain effect on the deposition rate and surface morphology of films, which may be attributed to the presence of bias voltage controlling the plasma energy and density. We conclude that both plasma sources have a different deposition mechanism, which is much more complicated than expected.

Growth studies of CVD-MBE by in-situ diagnostics

NASA Astrophysics Data System (ADS)

Maracas, George N.; Steimle, Timothy C.

1992-10-01

This is the final technical report for the three year DARPA-URI program 'Growth Studies of CVD-MBE by in-situ Diagnostics'. The goals of the program were to develop non-invasive, real time epitaxial growth monitoring techniques and combine them to gain an understanding of processes that occur during MBE growth from gas sources. We have adapted these techniques to a commercially designed gas source MBE system (Vacuum Generators Inc.) to facilitate technology transfer out of the laboratory into industrial environments. The in-situ measurement techniques of spectroscopic ellipsometry (SE) and laser induced fluorescence (LIF) have been successfully implemented to monitor the optical and chemical properties of the growing epitaxial film and the gas phase reactants. The ellipsometer was jointly developed with the J. Woolam Co. and has become a commercial product. The temperature dependence of group 3 and 5 desorption from GaAs and InP has been measured as well as the incident effusion cell fluxes. The temporal evolution of the growth has also been measured both by SE and LIF to show the smoothing of heterojunction surfaces during growth interruption. Complicated microcavity optical device structures have been monitored by ellipsometry in real time to improve device quality. This data has been coupled with the structural information obtained from reflection high energy electron diffraction (RHEED) to understand the growth processes in binary and ternary bulk 3-5 semiconductors and heterojunctions.

Simulation and Implementation of Moth-eye Structures as a Broadband Anti-Reflective Layer

NASA Astrophysics Data System (ADS)

Deshpande, Ketan S.

Conventional single layer thin anti-reflective coatings (ARCs) are only suitable for narrowband applications. A multilayer film stack is often employed for broadband applications. A coating of multiple layers with alternating low and high refractive index materials increases the overall cost of the system. This makes multilayer ARCs unsuitable for low-cost broadband applications. Since the discovery of moth-eye corneal nipple patterns and their potential applicability in the field of broadband ARCs, many studies have been carried out to fabricate these bio-inspired nanostructures with available manufacturing processes. Plasma etching processes used in microelectronic manufacturing are applied for creating these nanostructures at the Rochester Institute of Technology's Semiconductor & Microsystems Fabrication Laboratory (SMFL). Atomic Force Microscope (AFM) scanned surfaces of the nanostructure layer are simulated and characterized for their optical properties using a Finite-Difference Time Domain (FDTD) simulator from Lumerical Solutions, Inc. known as FDTD Solutions. Simulation results show that the layer is anti-reflective over 50 to 350 nm broadband of wavelengths at 0° angle of incidence. These simulation results were supported by ellipsometer reflection measurements off the actual samples at multiple angles of light incidence, which show a 10% to 15% decrease in reflection for 240 to 400 nm wavelengths. Further improvements in the optical efficiency of these structures can be achieved through simulation-fabrication-characterization cycles performed for this project. The optimized nanostructures can then serve the purpose of low-cost anti-reflective coatings for solar cells and similar applications.

Study of structure and antireflective properties of LaF3/HfO2/SiO2 and LaF3/HfO2/MgF2 trilayers for UV applications

NASA Astrophysics Data System (ADS)

Marszalek, K.; Jaglarz, J.; Sahraoui, B.; Winkowski, P.; Kanak, J.

2015-01-01

The aim of this paper is to study antireflective properties of the tree-layer systems LaF3/HfO2/SiO2 and LaF3/HfO2/MgF2 deposited on heated optical glass substrates. The films were evaporated by the use two deposition techniques. In first method oxide films were prepared by means of e-gun evaporation in vacuum of 5 × 10-5 mbar in the presence of oxygen. The second was used for the deposition of fluoride films. They were obtained by means of thermal source evaporation. Simulation of reflectance was performed for 1M2H1L (Quarter Wavelength Optical Thickness) film stack on an optical quartz glass with the refractive index n = 1.46. The layer thickness was optimized to achieve the lowest light scattering from glass surface covered with dioxide and fluoride films. The values of the interface roughness were determined through atomic force microscopy measurements. The essence of performed calculation was to find minimum reflectance of light in wide ultraviolet region. The spectral dispersion of the refractive index needed for calculations was determined from ellipsometric measurements using the spectroscopic ellipsometer M2000. Additionally, the total reflectance measurements in integrating sphere coupled with Perkin Elmer 900 spectrophotometer were performed. These investigations allowed to determine the influence of such film features like surface and interface roughness on light scattering.

Optical properties and emissivities of liquid metals and alloys

NASA Technical Reports Server (NTRS)

Krishnan, Shankar; Nordine, Paul C.

1993-01-01

This paper presents the results from our on-going program to investigate the optical properties of liquid metals and alloys at elevated temperatures. Ellipsometric and polarimetric techniques have been used to investigate the optical properties of materials in the 1000 - 3000 K temperature range and in the 0.3 - 0.1 mu m wavelength range. The ellipsometric and polarimetric techniques are described and the characteristics of the instruments are presented. The measurements are conducted by reflecting a polarized laser beam from an electromagnetically levitated liquid metal or alloy specimen. A Rotating Analyzer Ellipsometer (RAE) or a four-detector Division-of-Amplitude Photopolarimeter (DOAP) is used to determine the polarimetric properties of the light reflected at an angle of incidence of approximately 68 deg. Optical properties of the specimen which are calculated from these measurements include the index of refraction, extinction coefficient, normal spectral emissivity, and spectral hemispherical emissivity. These properties have been determined at various wavelengths and temperatures for liquid Ag, Al, Au, Cu, Nb, Ni, Pd, Pt, Si, Ti, Ti-Al alloys, U, and Zr. We also describe new experiments using pulsed-dye laser spectroscopic ellipsometry for studies of the wavelength dependence of the emissivities and optical properties of materials at high temperature. Preliminary results are given for liquid Al. The application of four-detector polarimetry for rapid determination of surface emissivity and true temperature is also described. Characteristics of these devices are presented. An example of the accuracy of this instrument in measurements of the melting point of zirconium is illustrated.

Electrical properties of HfO2 high- k thin-film MOS capacitors for advanced CMOS technology

NASA Astrophysics Data System (ADS)

Khairnar, A. G.; Patil, L. S.; Salunke, R. S.; Mahajan, A. M.

2015-11-01

We deposited the hafnium dioxide (HfO2) thin films on p-Si (100) substrates. The thin films were deposited with deposition time variations, viz 2, 4, 7 and 20 min using RF-sputtering technique. The thickness and refractive index of the films were measured using spectroscopic ellipsometer. The thicknesses of the films were measured to be 13.7, 21.9, 35.38 and 92.2 nm and refractive indices of 1.90, 1.93, 1.99 and 1.99, respectively, of the films deposited for 2, 4, 7 and 20 min deposition time. The crystal structures of the deposited HfO2 thin films were determined using XRD spectra and showed the monoclinic structure, confirmed with the ICDD card no 34-0104. Aluminum metallization was carried to form the Al/HfO2/ p-Si MOS structures by using thermal evaporation system with electrode area of 12.56 × 10-4 cm2. Capacitance voltage and current voltage measurements were taken to know electrical behavior of these fabricated MOS structures. The electrical parameters such as dielectric constant, flat-band shift and interface trap density determined through CV measurement were 7.99, 0.11 V and 6.94 × 1011 eV-1 cm-2, respectively. The low leakage current density was obtained from IV measurement of fabricated MOS structure at 1.5 V is 4.85 × 10-10 Acm-2. Aforesaid properties explored the suitability of the fabricated HfO2 high- k-based MOS capacitors for advanced CMOS technology.

An integrated platform for biomolecule interaction analysis

NASA Astrophysics Data System (ADS)

Jan, Chia-Ming; Tsai, Pei-I.; Chou, Shin-Ting; Lee, Shu-Sheng; Lee, Chih-Kung

2013-02-01

We developed a new metrology platform which can detect real-time changes in both a phase-interrogation mode and intensity mode of a SPR (surface plasmon resonance). We integrated a SPR and ellipsometer to a biosensor chip platform to create a new biomolecular interaction measurement mechanism. We adopted a conductive ITO (indium-tinoxide) film to the bio-sensor platform chip to expand the dynamic range and improve measurement accuracy. The thickness of the conductive film and the suitable voltage constants were found to enhance performance. A circularly polarized ellipsometry configuration was incorporated into the newly developed platform to measure the label-free interactions of recombinant human C-reactive protein (CRP) with immobilized biomolecule target monoclonal human CRP antibody at various concentrations. CRP was chosen as it is a cardiovascular risk biomarker and is an acute phase reactant as well as a specific prognostic indicator for inflammation. We found that the sensitivity of a phaseinterrogation SPR is predominantly dependent on the optimization of the sample incidence angle. The effect of the ITO layer effective index under DC and AC effects as well as an optimal modulation were experimentally performed and discussed. Our experimental results showed that the modulated dynamic range for phase detection was 10E-2 RIU based on a current effect and 10E-4 RIU based on a potential effect of which a 0.55 (°/RIU) measurement was found by angular-interrogation. The performance of our newly developed metrology platform was characterized to have a higher sensitivity and less dynamic range when compared to a traditional full-field measurement system.

Lanthanide-Assisted Deposition of Strongly Electro-optic PZT Thin Films on Silicon: Toward Integrated Active Nanophotonic Devices.

PubMed

George, J P; Smet, P F; Botterman, J; Bliznuk, V; Woestenborghs, W; Van Thourhout, D; Neyts, K; Beeckman, J

2015-06-24

The electro-optical properties of lead zirconate titanate (PZT) thin films depend strongly on the quality and crystallographic orientation of the thin films. We demonstrate a novel method to grow highly textured PZT thin films on silicon using the chemical solution deposition (CSD) process. We report the use of ultrathin (5-15 nm) lanthanide (La, Pr, Nd, Sm) based intermediate layers for obtaining preferentially (100) oriented PZT thin films. X-ray diffraction measurements indicate preferentially oriented intermediate Ln2O2CO3 layers providing an excellent lattice match with the PZT thin films grown on top. The XRD and scanning electron microscopy measurements reveal that the annealed layers are dense, uniform, crack-free and highly oriented (>99.8%) without apparent defects or secondary phases. The EDX and HRTEM characterization confirm that the template layers act as an efficient diffusion barrier and form a sharp interface between the substrate and the PZT. The electrical measurements indicate a dielectric constant of ∼650, low dielectric loss of ∼0.02, coercive field of 70 kV/cm, remnant polarization of 25 μC/cm(2), and large breakdown electric field of 1000 kV/cm. Finally, the effective electro-optic coefficients of the films are estimated with a spectroscopic ellipsometer measurement, considering the electric field induced variations in the phase reflectance ratio. The electro-optic measurements reveal excellent linear effective pockels coefficients of 110 to 240 pm/V, which makes the CSD deposited PZT thin film an ideal candidate for Si-based active integrated nanophotonic devices.

Thermo-Optical Properties of Thin-Film TiO2–Al2O3 Bilayers Fabricated by Atomic Layer Deposition

PubMed Central

Ali, Rizwan; Saleem, Muhammad Rizwan; Pääkkönen, Pertti; Honkanen, Seppo

2015-01-01

We investigate the optical and thermo-optical properties of amorphous TiO2–Al2O3 thin-film bilayers fabricated by atomic layer deposition (ALD). Seven samples of TiO2–Al2O3 bilayers are fabricated by growing Al2O3 films of different thicknesses on the surface of TiO2 films of constant thickness (100 nm). Temperature-induced changes in the optical refractive indices of these thin-film bilayers are measured by a variable angle spectroscopic ellipsometer VASE®. The optical data and the thermo-optic coefficients of the films are retrieved and calculated by applying the Cauchy model and the linear fitting regression algorithm, in order to evaluate the surface porosity model of TiO2 films. The effects of TiO2 surface defects on the films’ thermo-optic properties are reduced and modified by depositing ultra-thin ALD-Al2O3 diffusion barrier layers. Increasing the ALD-Al2O3 thickness from 20 nm to 30 nm results in a sign change of the thermo-optic coefficient of the ALD-TiO2. The thermo-optic coefficients of the 100 nm-thick ALD-TiO2 film and 30 nm-thick ALD-Al2O3 film in a bilayer are (0.048 ± 0.134) × 10−4 °C−1 and (0.680 ± 0.313) × 10−4 °C−1, respectively, at a temperature T = 62 °C.

Combined ellipsometry and refractometry technique for characterisation of liquid crystal based nanocomposites.

PubMed

Warenghem, Marc; Henninot, Jean François; Blach, Jean François; Buchnev, Oleksandr; Kaczmarek, Malgosia; Stchakovsky, Michel

2012-03-01

Spectroscopic ellipsometry is a technique especially well suited to measure the effective optical properties of a composite material. However, as the sample is optically thick and anisotropic, this technique loses its accuracy for two reasons: anisotropy means that two parameters have to be determined (ordinary and extraordinary indices) and optically thick means a large order of interference. In that case, several dielectric functions can emerge out of the fitting procedure with a similar mean square error and no criterion to discriminate the right solution. In this paper, we develop a methodology to overcome that drawback. It combines ellipsometry with refractometry. The same sample is used in a total internal reflection (TIR) setup and in a spectroscopic ellipsometer. The number of parameters to be determined by the fitting procedure is reduced in analysing two spectra, the correct final solution is found by using the TIR results both as initial values for the parameters and as check for the final dielectric function. A prefitting routine is developed to enter the right initial values in the fitting procedure and so to approach the right solution. As an example, this methodology is used to analyse the optical properties of BaTiO(3) nanoparticles embedded in a nematic liquid crystal. Such a methodology can also be used to analyse experimentally the validity of the mixing laws, since ellipsometry gives the effective dielectric function and thus, can be compared to the dielectric function of the components of the mixture, as it is shown on the example of BaTiO(3)/nematic composite.

Alternative Fuels Research Laboratory

NASA Technical Reports Server (NTRS)

Surgenor, Angela D.; Klettlinger, Jennifer L.; Nakley, Leah M.; Yen, Chia H.

2012-01-01

NASA Glenn has invested over $1.5 million in engineering, and infrastructure upgrades to renovate an existing test facility at the NASA Glenn Research Center (GRC), which is now being used as an Alternative Fuels Laboratory. Facility systems have demonstrated reliability and consistency for continuous and safe operations in Fischer-Tropsch (F-T) synthesis and thermal stability testing. This effort is supported by the NASA Fundamental Aeronautics Subsonic Fixed Wing project. The purpose of this test facility is to conduct bench scale F-T catalyst screening experiments. These experiments require the use of a synthesis gas feedstock, which will enable the investigation of F-T reaction kinetics, product yields and hydrocarbon distributions. Currently the facility has the capability of performing three simultaneous reactor screening tests, along with a fourth fixed-bed reactor for catalyst activation studies. Product gas composition and performance data can be continuously obtained with an automated gas sampling system, which directly connects the reactors to a micro-gas chromatograph (micro GC). Liquid and molten product samples are collected intermittently and are analyzed by injecting as a diluted sample into designated gas chromatograph units. The test facility also has the capability of performing thermal stability experiments of alternative aviation fuels with the use of a Hot Liquid Process Simulator (HLPS) (Ref. 1) in accordance to ASTM D 3241 "Thermal Oxidation Stability of Aviation Fuels" (JFTOT method) (Ref. 2). An Ellipsometer will be used to study fuel fouling thicknesses on heated tubes from the HLPS experiments. A detailed overview of the test facility systems and capabilities are described in this paper.

Effect of external magnetic field on the crystal growth of nano-structured Zn xMn 1- x+ yZr yFe 2-2 yO 4 thin films

NASA Astrophysics Data System (ADS)

Anjum, Safia; Rafique, M. S.; Khaleeq-ur-Rahaman, M.; Siraj, K.; Usman, Arslan; Ahsan, A.; Naseem, S.; Khan, K.

2011-06-01

Zn 0.2Mn 0.81Zr 0.01Fe 1.98O 4 and Zn 0.2Mn 0.83Zr 0.03Fe 1.94O 4 thin films with different concentrations of Mn and Zr have been deposited on single crystal n-Si (400) at room temperature (RT) by pulse laser deposition technique (PLD). The films have been deposited under two conditions: (i) with the applied external magnetic field across the propagation of the plume (ii) without applied external magnetic field ( B=0). XRD results show the films have spinel cubic structure when deposited in the presence of magnetic field. SEM and AFM observations clearly show the effect of external applied magnetic field on the growth of films in terms of small particle size, improved uniformity and lower r.m.s. roughness. Thin films deposited under the influence of external magnetic field exhibit higher magnetization as measured by the VSM. The optical band gap energy Eg, refractive index n, reflection, absorption and the thickness of the thin films were measured by spectroscopy ellipsometer. The reflection of Zn 0.2Mn 0.83Zr 0.03Fe 1.94O 4 thin films is higher than Zn 0.2Mn 0.81Zr 0.01Fe 1.98O 4 thin films due to the greater concentration of Zr. The thicknesses of the thin films under the influence of external magnetic field are larger than the films grown without field for both samples. The optical band gap energy Eg decreases with increasing film thickness. The films with external magnetic field are found highly absorbing in nature due to the larger film thickness.

A comparative study on omnidirectional anti-reflection SiO2 nanostructure films coating by glancing angle deposition

NASA Astrophysics Data System (ADS)

Prachachet, R.; Samransuksamer, B.; Horprathum, M.; Eiamchai, P.; Limwichean, S.; Chananonnawathorn, C.; Lertvanithphol, T.; Muthitamongkol, P.; Boonruang, S.; Buranasiri, P.

2018-02-01

Fabricated omnidirectional anti-reflection nanostructure films as a one of the promising alternative solar cell applications have attracted enormous scientific and industrial research benefits to their broadband, effective over a wide range of incident angles, lithography-free and high-throughput process. Recently, the nanostructure SiO2 film was the most inclusive study on anti-reflection with omnidirectional and broadband characteristics. In this work, the three-dimensional silicon dioxide (SiO2) nanostructured thin film with different morphologies including vertical align, slant, spiral and thin films were fabricated by electron beam evaporation with glancing angle deposition (GLAD) on the glass slide and silicon wafer substrate. The morphological of the prepared samples were characterized by field-emission scanning electron microscope (FE-SEM) and high-resolution transmission electron microscope (HRTEM). The transmission, omnidirectional and birefringence property of the nanostructure SiO2 films were investigated by UV-Vis-NIR spectrophotometer and variable angle spectroscopic ellipsometer (VASE). The spectrophotometer measurement was performed at normal incident angle and a full spectral range of 200 - 2000 nm. The angle dependent transmission measurements were investigated by rotating the specimen, with incidence angle defined relative to the surface normal of the prepared samples. This study demonstrates that the obtained SiO2 nanostructure film coated on glass slide substrate exhibits a higher transmission was 93% at normal incident angle. In addition, transmission measurement in visible wavelength and wide incident angles -80 to 80 were increased in comparison with the SiO2 thin film and glass slide substrate due to the transition in the refractive index profile from air to the nanostructure layer that improve the antireflection characteristics. The results clearly showed the enhanced omnidirectional and broadband characteristic of the three dimensional SiO2 nanostructure film coating.

Characterisation of slab waveguides, fabricated in CaF2 and Er-doped tungsten-tellurite glass by MeV energy N+ ion implantation, using spectroscopic ellipsometry and m-line spectroscopy

NASA Astrophysics Data System (ADS)

Bányász, I.; Berneschi, S.; Lohner, T.; Fried, M.; Petrik, P.; Khanh, N. Q.; Zolnai, Z.; Watterich, A.; Bettinelli, M.; Brenci, M.; Nunzi-Conti, G.; Pelli, S.; Righini, G. C.; Speghini, A.

2010-05-01

Slab waveguides were fabricated in Er-doped tungsten-tellurite glass and CaF2 crystal samples via ion implantation. Waveguides were fabricated by implantation of MeV energy N+ ions at the Van de Graaff accelerator of the Research Institute for Particle and Nuclear Physics, Budapest, Hungary. Part of the samples was annealed. Implantations were carried out at energies of 1.5 MeV (tungsten-tellurite glass) and 3.5 MeV (CaF2). The implanted doses were between 5 x 1012 and 8 x 1016 ions/cm2. Refractive index profile of the waveguides was measured using SOPRA ES4G and Woollam M-2000DI spectroscopic ellipsometers at the Research Institute for Technical Physics and Materials Science, Budapest. Functionality of the waveguides was tested using a home-made instrument (COMPASSO), based on m-line spectroscopy and prism coupling technique, which was developed at the Materials and Photonics Devices Laboratory (MDF Lab.) of the Institute of Applied Physics in Sesto Fiorentino, Italy. Results of both types of measurements were compared to depth distributions of nuclear damage in the samples, calculated by SRIM 2007 code. Thicknesses of the guiding layer and of the implanted barrier obtained by spectroscopic ellipsometry correspond well to SRIM simulations. Irradiationinduced refractive index modulation saturated around a dose of 8 x 1016 ions/cm2 in tungsten-tellurite glass. Annealing of the implanted waveguides resulted in a reduction of the propagation loss, but also reduced the number of supported guiding modes at the lower doses. We report on the first working waveguides fabricated in an alkali earth halide crystal implanted by MeV energy medium-mass ions.

Direct comparison of the performance of commonly used e-beam resists during nano-scale plasma etching of Si, SiO2, and Cr

NASA Astrophysics Data System (ADS)

Goodyear, Andy; Boettcher, Monika; Stolberg, Ines; Cooke, Mike

2015-03-01

Electron beam writing remains one of the reference pattern generation techniques, and plasma etching continues to underpin pattern transfer. We report a systematic study of the plasma etch resistance of several e-beam resists, both negative and positive as well as classical and Chemically Amplified Resists: HSQ[1,2] (Dow Corning), PMMA[3] (Allresist GmbH), AR-P6200 (Allresist GmbH), ZEP520 (Zeon Corporation), CAN028 (TOK), CAP164 (TOK), and an additional pCAR (non-disclosed provider). Their behaviour under plasma exposure to various nano-scale plasma etch chemistries was examined (SF6/C4F8 ICP silicon etch, CHF3/Ar RIE SiO2 etch, Cl2/O2 RIE and ICP chrome etch, and HBr ICP silicon etch). Samples of each resist type were etched simultaneously to provide a direct comparison of their etch resistance. Resist thicknesses (and hence resist erosion rates) were measured by spectroscopic ellipsometer in order to provide the highest accuracy for the resist comparison. Etch selectivities (substrate:mask etch rate ratio) are given, with recommendations for the optimum resist choice for each type of etch chemistry. Silicon etch profiles are also presented, along with the exposure and etch conditions to obtain the most vertical nano-scale pattern transfer. We identify one resist that gave an unusually high selectivity for chlorinated and brominated etches which could enable pattern transfer below 10nm without an additional hard mask. In this case the resist itself acts as a hard mask. We also highlight the differing effects of fluorine and bromine-based Silicon etch chemistries on resist profile evolution and hence etch fidelity.

Ellipsometry-based combination of isothermal sorption-desorption measurement and temperature programmed desorption technique: A probe for interaction of thin polymer films with solvent vapor.

PubMed

Efremov, Mikhail Yu; Nealey, Paul F

2018-05-01

An environmental chamber equipped with an in situ spectroscopic ellipsometer, programmatic vapor pressure control, and variable temperature substrate holder has been designed for studying polymer coating behavior during an exposure to a solvent vapor and also for probing the residual solvent in the film afterwards. Both sorption-desorption cycle at a constant temperature and temperature programmed desorption (TPD) of the residual solvent manifest themselves as a change of the film thickness. Monitoring of ellipsometric angles of the coating allows us to determine the thickness as a function of the vapor pressure or sample temperature. The solvent vapor pressure is precisely regulated by a computer-controlled pneumatics. TPD spectra are recorded during heating of the film in an oil-free vacuum. The vapor pressure control system is described in detail. The system has been tested on 6-170 nm thick polystyrene, poly(methyl methacrylate), and poly(2-vinyl pyridine) films deposited on silicon substrates. Liquid toluene, water, ethanol, isopropanol, cyclohexane, 1,2-dichloroethane, and chlorobenzene were used to create a vapor atmosphere. Typical sorption-desorption and TPD curves are shown. The instrument achieves sub-monolayer sensitivity for adsorption studies on flat surfaces. Polymer-solvent vapor systems with strong interaction demonstrate characteristic absorption-desorption hysteresis spanning from vacuum to the glass transition pressure. Features on the TPD curves can be classified as either glass transition related film contraction or low temperature broad contraction peak. Typical absorption-desorption and TPD dependencies recorded for the 6 nm thick polystyrene film demonstrate the possibility to apply the presented technique for probing size effects in extremely thin coatings.

S-Genius, a universal software platform with versatile inverse problem resolution for scatterometry

NASA Astrophysics Data System (ADS)

Fuard, David; Troscompt, Nicolas; El Kalyoubi, Ismael; Soulan, Sébastien; Besacier, Maxime

2013-05-01

S-Genius is a new universal scatterometry platform, which gathers all the LTM-CNRS know-how regarding the rigorous electromagnetic computation and several inverse problem solver solutions. This software platform is built to be a userfriendly, light, swift, accurate, user-oriented scatterometry tool, compatible with any ellipsometric measurements to fit and any types of pattern. It aims to combine a set of inverse problem solver capabilities — via adapted Levenberg- Marquard optimization, Kriging, Neural Network solutions — that greatly improve the reliability and the velocity of the solution determination. Furthermore, as the model solution is mainly vulnerable to materials optical properties, S-Genius may be coupled with an innovative material refractive indices determination. This paper will a little bit more focuses on the modified Levenberg-Marquardt optimization, one of the indirect method solver built up in parallel with the total SGenius software coding by yours truly. This modified Levenberg-Marquardt optimization corresponds to a Newton algorithm with an adapted damping parameter regarding the definition domains of the optimized parameters. Currently, S-Genius is technically ready for scientific collaboration, python-powered, multi-platform (windows/linux/macOS), multi-core, ready for 2D- (infinite features along the direction perpendicular to the incident plane), conical, and 3D-features computation, compatible with all kinds of input data from any possible ellipsometers (angle or wavelength resolved) or reflectometers, and widely used in our laboratory for resist trimming studies, etching features characterization (such as complex stack) or nano-imprint lithography measurements for instance. The work about kriging solver, neural network solver and material refractive indices determination is done (or about to) by other LTM members and about to be integrated on S-Genius platform.

[Studies on the saliva adsorption and the salivary film property on the hydroxyapatite surface].

PubMed

Yao, Jiang-wu; Chen, Guo-yang; Lin, Feng; Lin, Chang-jian; Tao, Tao

2012-07-01

To evaluate the thickness and viscoelasticity of whole saliva (WS), parotid saliva (PS) and submandibular/sublingual gland saliva (SMSLS) film adsorption on the hydroxyapatite (HA) surface. Ultra-thin layer of HA nanocrystals was coated on the dissipation TiO(2) sensor of gold quartz crystal microbalance using electrophoretic deposition technique. The thickness of the HA layer was measured by the ellipsometer, and element analysis was conducted using X-ray photoelectron spectroscopy. Atomic force microscopy and scanning electron microscope were used to observe its morphology. The in-situ adsorption thickness, the shear elastic modulus and the shear viscosity of salivary layers (WS, PS and SMSLS) on HA surfaces were investigated. The statistical data were analysed by an one-way ANOVA analysis followed by a SNK-q test. The results show that the HA layer was a plate-like morphology with 1.53 ± 0.12 in Ca/P molar ratio, (19.1 ± 0.9) nm in the thickness and (6.5 ± 1.6) nm in the roughness. The thickness of salivary film was SMSLS [(21.84 ± 1.25) nm] > WS[(17.91 ± 1.35) nm] > PS [(14.30 ± 1.03 nm) (P < 0.05). The shear elastic modulus of salivary film was PS [(0.61 ± 0.01) MPa] > SMSLS [(0.31 ± 0.09) MPa] and WS [(0.25 ± 0.03) MPa] (P < 0.05). The trend of the shear viscosity was opposite to one of thickness. The characteristics of saliva adsorption on HA surface suggest that the thicker, softer and more hydrated properties for the SMSLS and WS films are likely to afford a stronger lubrication to protect oral surfaces from wear and dehydration. The viscoelasticity of the PS film is probably related to the retention covering the oral cavity.

Hole-dominated transport in InSb nanowires grown on high-quality InSb films

NASA Astrophysics Data System (ADS)

Algarni, Zaina; George, David; Singh, Abhay; Lin, Yuankun; Philipose, U.

2016-12-01

We have developed an effective strategy for synthesizing p-type indium antimonide (InSb) nanowires on a thin film of InSb grown on glass substrate. The InSb films were grown by a chemical reaction between S b 2 S 3 and I n and were characterized by structural, compositional, and optical studies. Scanning electron microscopy (SEM) and atomic force microscopy (AFM) studies reveal that the surface of the substrate is covered with a polycrystalline InSb film comprised of sub-micron sized InSb islands. Energy dispersive X-ray (EDX) results show that the film is stoichiometric InSb. The optical constants of the InSb film, characterized using a variable-angle spectroscopic ellipsometer (VASE) shows a maximum value for refractive index at 3.7 near 1.8 eV, and the extinction coefficient (k) shows a maximum value 3.3 near 4.1 eV. InSb nanowires were subsequently grown on the InSb film with 20 nm sized Au nanoparticles functioning as the metal catalyst initiating nanowire growth. The InSb nanowires with diameters in the range of 40-60 nm exhibit good crystallinity and were found to be rich in Sb. High concentrations of anions in binary semiconductors are known to introduce acceptor levels within the band gap. This un-intentional doping of the InSb nanowire resulting in hole-dominated transport in the nanowires is demonstrated by the fabrication of a p-channel nanowire field effect transistor. The hole concentration and field effect mobility are estimated to be ≈1.3 × 1017 cm-3 and 1000 cm2 V-1 s-1, respectively, at room temperature, values that are particularly attractive for the technological implications of utilizing p-InSb nanowires in CMOS electronics.

Ellipsometry-based combination of isothermal sorption-desorption measurement and temperature programmed desorption technique: A probe for interaction of thin polymer films with solvent vapor

NASA Astrophysics Data System (ADS)

Efremov, Mikhail Yu.; Nealey, Paul F.

2018-05-01

An environmental chamber equipped with an in situ spectroscopic ellipsometer, programmatic vapor pressure control, and variable temperature substrate holder has been designed for studying polymer coating behavior during an exposure to a solvent vapor and also for probing the residual solvent in the film afterwards. Both sorption-desorption cycle at a constant temperature and temperature programmed desorption (TPD) of the residual solvent manifest themselves as a change of the film thickness. Monitoring of ellipsometric angles of the coating allows us to determine the thickness as a function of the vapor pressure or sample temperature. The solvent vapor pressure is precisely regulated by a computer-controlled pneumatics. TPD spectra are recorded during heating of the film in an oil-free vacuum. The vapor pressure control system is described in detail. The system has been tested on 6-170 nm thick polystyrene, poly(methyl methacrylate), and poly(2-vinyl pyridine) films deposited on silicon substrates. Liquid toluene, water, ethanol, isopropanol, cyclohexane, 1,2-dichloroethane, and chlorobenzene were used to create a vapor atmosphere. Typical sorption-desorption and TPD curves are shown. The instrument achieves sub-monolayer sensitivity for adsorption studies on flat surfaces. Polymer-solvent vapor systems with strong interaction demonstrate characteristic absorption-desorption hysteresis spanning from vacuum to the glass transition pressure. Features on the TPD curves can be classified as either glass transition related film contraction or low temperature broad contraction peak. Typical absorption-desorption and TPD dependencies recorded for the 6 nm thick polystyrene film demonstrate the possibility to apply the presented technique for probing size effects in extremely thin coatings.

Enhancing scatterometry CD signal-to-noise ratio for 1x logic and memory challenges

NASA Astrophysics Data System (ADS)

Shaughnessy, Derrick; Krishnan, Shankar; Wei, Lanhua; Shchegrov, Andrei V.

2013-04-01

The ongoing transition from 2D to 3D structures in logic and memory has led to an increased adoption of scatterometry CD (SCD) for inline metrology. However, shrinking device dimensions in logic and high aspect ratios in memory represent primary challenges for SCD and require a significant breakthrough in improving signal-to-noise performance. We present a report on the new generation of SCD technology, enabled by a new laser-driven plasma source. The developed light source provides several key advantages over conventional arc lamps typically used in SCD applications. The plasma color temperature of the laser driven source is considerably higher than available with arc lamps resulting in >5X increase in radiance in the visible and >10X increase in radiance in the DUV when compared to sources on previous generation SCD tools while maintaining or improving source intensity noise. This high radiance across such a broad spectrum allows for the use of a single light source from 190-1700nm. When combined with other optical design changes, the higher source radiance enables reduction of measurement box size of our spectroscopic ellipsometer from 45×45um box to 25×25um box without compromising signal to noise ratio. The benefits for 1×nm SCD metrology of the additional photons across the DUV to IR spectrum have been found to be greater than the increase in source signal to noise ratio would suggest. Better light penetration in Si and poly-Si has resulted in improved sensitivity and correlation breaking for critical parameters in 1xnm FinFET and HAR flash memory structures.

Non-plasmonic nanostructures for subwavelength nonlinear optics (Conference Presentation)

NASA Astrophysics Data System (ADS)

Shcherbakov, Maxim R.

2016-09-01

Thin films of hydrogenated amorphous silicon were grown on cover glasses by PECVD in an Oxford PlasmaLab System 100. The thickness of the films and their linear optical properties were characterized by J.A. Woollam Co. Spectroscopic Ellipsometer M-2000D. The follow-up procedure was to spin coat the negative tone ma-N 2403 electron-beam resist over the film, and expose the resist using an electron-beam lithography system (Raith 150). The exposed film was developed and brought to the reactive ion etching facility. We performed conventional apertureless z-scan and I-scan measurements. A train of femtosecond laser pulses form a Coherent Micra 5 laser with an output mean power of 250 mW passed through a precompressor for a negative chirp. A thin-film nanoparticle polarizer (ThorLabs LPVIS050) and a Glan laser-grade polarizer were used to adjust the fluence values in the range of 0.1-10 mJ/cm2. For the pump-probe measurements, a train of femtosecond laser pulses form the laser passed through a pre-compressor for a negative chirp. The pulses were split into two; the resulting mean power values of pump and probe beams at the sample site were approximately 40 mW and 1.5 mW, respectively. The pulses were measured to have 45 fs intensity autocorrelation FHWM duration, and a spectral FWHM width of 19 nm, resulting in a time-bandwidth product of 0.4. Focusing through a silica lens pair achieved waists of roughly 30 μm in diameter, resulting in modest pump fluence values of approximately 30 μJ/cm2, a pump pulse energy of 0.25 nJ, and per-disk deposited energy of 13 fJ. The third-harmonic generation experiment description can be found as the supplementary information of the following publication: http://pubs.acs.org/doi/abs/10.1021/nl503029j

Synthesis and characterization of binary ZnO-SnO2 (ZTO) thin films by e-beam evaporation technique

NASA Astrophysics Data System (ADS)

Bibi, Shagufta; Shah, A.; Mahmood, Arshad; Ali, Zahid; Raza, Qaisar; Aziz, Uzma; Haneef; Waheed, Abdul; Shah, Ziaullah

2018-04-01

The binary ZnO-SnO2 (ZTO) thin films with varying SnO2 concentrations (5, 10, 15, and 20 wt%) were grown on glass substrate by e-beam evaporation technique. The prepared ZTO films were annealed at 400 °C in air. These films were then characterized to investigate their structural, optical, and electrical properties as a function of SnO2 concentration. XRD analysis reveals that the crystallinity of the film decreases with the addition of SnO2 and it transforms to an amorphous structure at a composition of 40% SnO2 and 60% ZnO. Morphology of the films was examined by atomic force microscopy which points out that surface roughness of the films decreases with the increasing of SnO2 in the film. Optical properties such as optical transparency, band-gap energy, and optical constants of these films were examined by spectrophotometer and spectroscopic Ellipsometer. It was observed that the average optical transmission of mixed films improves with incorporation of SnO2. In addition, the band-gap energy of the films was determined to be in the range of 3.37-3.7 eV. Furthermore, it was found that the optical constants (n and k) decrease with the addition of SnO2. Similarly, it is observed that the electrical resistivity increases nonlinearly with the increase in SnO2 in ZnO-SnO2 thin films. However, it is noteworthy that the highest figure of merit (FOM) value, i.e., 55.87 × 10-5 Ω-1, is obtained for ZnO-SnO2 (ZTO) thin film with 40 wt% of SnO2 composition. Here, we suggest that ZnO-SnO2 (ZTO) thin film with composition of 60:40 wt% can be used as an efficient TCO film due to the improved transmission, and reduced RMS value and highest FOM value.

Development of Field-Controlled Smart Optic Materials (ScN, AlN) with Rare Earth Dopants

NASA Technical Reports Server (NTRS)

Kim, Hyun-Jung; Park, Yeonjoon; King, Glen C.; Choi, Sang H.

2012-01-01

The purpose of this investigation is to develop the fundamental materials and fabrication technology for field-controlled spectrally active optics that are essential for industry, NASA, and DOD applications such as: membrane optics, filters for LIDARs, windows for sensors, telescopes, spectroscopes, cameras, flat-panel displays, etc. ScN and AlN thin films were fabricated on c-axis Sapphire (0001) or quartz substrate with the RF and DC magnetron sputtering. The crystal structure of AlN in fcc (rocksalt) and hcp (wurtzite) were controlled. Advanced electrical characterizations were performed, including I-V and Hall Effect Measurement. ScN film has a free carrier density of 5.8 x 10(exp 20)/per cubic centimeter and a conductivity of 1.1 x 10(exp 3) per centimeter. The background ntype conductivity of as-grown ScN has enough free electrons that can readily interact with the photons. The high density of free electrons and relatively low mobility indicate that these films contain a high level of shallow donors as well as deep levels. Also, the UV-Vis spectrum of ScN and AlN thin films with rare earth elements (Er or Ho) were measured at room temperature. Their optical band gaps were estimated to be about 2.33eV and 2.24eV, respectively, which are obviously smaller than that of undoped thin film ScN (2.4eV). The red-shifted absorption onset gives direct evidence for the decrease of band gap (Eg) and the energy broadening of valence band states are attributable to the doping. As the doped elements enter the ScN crystal lattices, the localized band edge states form at the doped sites with a reduction of Eg. Using a variable angle spectroscopic ellipsometer, the decrease in refractive index with applied field is observed with a smaller shift in absorption coefficient.

Enhancement of light absorption in polyazomethines due to plasmon excitation on randomly distributed metal nanoparticles

NASA Astrophysics Data System (ADS)

Wróbel, P.; Antosiewicz, T. J.; Stefaniuk, T.; Ciesielski, A.; Iwan, A.; Wronkowska, A. A.; Wronkowski, A.; Szoplik, T.

2015-05-01

In photovoltaic devices, metal nanoparticles embedded in a semiconductor layer allow the enhancement of solar-toelectric energy conversion efficiency due to enhanced light absorption via a prolonged optical path, enhanced electric fields near the metallic inclusions, direct injection of hot electrons, or local heating. Here we pursue the first two avenues. In the first, light scattered at an angle beyond the critical angle for reflection is coupled into the semiconductor layer and confined within such planar waveguide up to possible exciton generation. In the second, light is trapped by the excitation of localized surface plasmons on metal nanoparticles leading to enhanced near-field plasmon-exciton coupling at the peak of the plasmon resonance. We report on results of a numerical experiment on light absorption in polymer- (fullerene derivative) blends, using the 3D FDTD method, where exact optical parameters of the materials involved are taken from our recent measurements. In simulations we investigate light absorption in randomly distributed metal nanoparticles dispersed in polyazomethine-(fullerene derivative) blends, which serve as active layers in bulkheterojunction polymer solar cells. In the study Ag and Al nanoparticles of different diameters and fill factors are diffused in two air-stable aromatic polyazomethines with different chemical structures (abbreviated S9POF and S15POF) mixed with phenyl-C61-butyric acid methyl ester (PCBM) or [6,6]-phenyl-C71-butyric acid methyl ester (PC71BM). The mixtures are spin coated on a 100 nm thick Al layer deposited on a fused silica substrate. Optical constants of the active layers are taken from spectroscopic ellipsometry and reflectance measurements using a rotating analyzer type ellipsometer with auto-retarder performed in the wavelength range from 225 nm to 2200 nm. The permittivities of Ag and Al particles of diameters from 20 to 60 nm are assumed to be equal to those measured on 100 to 200 nm thick metal films.

A blue optical filter for narrow-band imaging in endoscopic capsules

NASA Astrophysics Data System (ADS)

Silva, M. F.; Ghaderi, M.; Goncalves, L. M.; de Graaf, G.; Wolffenbuttel, R. F.; Correia, J. H.

2014-05-01

This paper presents the design, simulation, fabrication, and characterization of a thin-film Fabry-Perot resonator composed of titanium dioxide (TiO2) and silicon dioxide (SiO2) thin-films. The optical filter is developed to be integrated with a light emitting diode (LED) for enabling narrow-band imaging (NBI) in endoscopy. The NBI is a high resolution imaging technique that uses spectrally centered blue light (415 nm) and green light (540 nm) to illuminate the target tissue. The light at 415 nm enhances the imaging of superficial veins due to their hemoglobin absorption, while the light at 540 nm penetrates deeper into the mucosa, thus enhances the sub-epithelial vessels imaging. Typically the endoscopes and endoscopic capsules use white light for acquiring images of the gastrointestinal (GI) tract. However, implementing the NBI technique in endoscopic capsules enhances their capabilities for the clinical applications. A commercially available blue LED with a maximum peak intensity at 404 nm and Full Width Half Maximum (FWHM) of 20 nm is integrated with a narrow band blue filter as the NBI light source. The thin film simulations show a maximum spectral transmittance of 36 %, that is centered at 415 nm with FWHM of 13 nm for combined the blue LED and a Fabry Perot resonator system. A custom made deposition scheme was developed for the fabrication of the blue optical filter by RF sputtering. RF powered reactive sputtering at 200 W with the gas flows of argon and oxygen that are controlled for a 5:1 ratio gives the optimum optical conditions for TiO2 thin films. For SiO2 thin films, a non-reactive RF sputtering at 150 W with argon gas flow at 15 sccm results in the best optical performance. The TiO2 and SiO2 thin films were fully characterized by an ellipsometer in the wavelength range between 250 nm to 1600 nm. Finally, the optical performance of the blue optical filter is measured and presented.

Structurally colored biopolymer thin films for detection of dissolved metal ions in aqueous solution

NASA Astrophysics Data System (ADS)

Cathell, Matthew David

Natural polymers, such as the polysaccharides alginate and chitosan, are noted sorbents of heavy metals. Their polymer backbone structures are rich in ligands that can interact with metal ions through chelation, electrostatics, ion exchange and nonspecific mechanisms. These water-soluble biopolymer materials can be processed into hydrogel thin films, creating high surface area interfaces ideal for binding and sequestering metal ions from solution. By virtue of their uniform nanoscale dimensions (with thicknesses smaller than wavelengths of visible light) polymer thin films exhibit structure-based coloration. This phenomenon, frequently observed in nature, causes the transparent and essentially colorless films to reflect light in a wide array of colors. The lamellar film structures act as one-dimensional photonic crystals, allowing selective reflection of certain wavelengths of light while minimizing other wavelengths by out-of-phase interference. The combination of metal-binding and reflective properties make alginate and chitosan thin films attractive candidates for analyte sensing. Interactions with metal ions can induce changes in film thicknesses and refractive indices, thus altering the path of light reflected through the film. Small changes in dimensional or optical properties can lead to shifts in film color that are perceivable by the unaided eye. These thin films offer the potential for optical sensing of toxic dissolved materials without the need for instrumentation, external power or scientific expertise. With the use of a spectroscopic ellipsometer and a fiber optic reflectance spectrometer, the physical and optical characteristics of biopolymer thin films have been characterized in response to 50 ppm metal ion solutions. It has been determined that metal interactions can lead to measurable changes in both film thicknesses and effective refractive indices. The intrinsic response behaviors of alginate and chitosan, as well as the responses of modified derivatives of these materials, have been investigated. It has been found that the natural metal selectivity of biopolymer films can be tuned and refined by adjusting the ligand environment through backbone modification. Other investigations have also been undertaken, including in situ monitoring of biopolymer---metal interactions and quantification of thin film metal-binding capacities.

Effect of Rare Earth Elements (Er, Ho) on Semi-Metallic Materials (ScN) in an Applied Electric Field

NASA Technical Reports Server (NTRS)

Kim, Hyunjung; Park, Yeonjoon; King, Glen C.; Lee, Kunik; Choi, Sang H.

2012-01-01

The development of materials and fabrication technology for field-controlled spectrally active optics is essential for applications such as membrane optics, filters for LIDARs, windows for sensors, telescopes, spectroscopes, cameras and flat-panel displays. The dopants of rare earth elements, in a host of optical systems, create a number of absorption and emission band structures and can easily be incorporated into many high quality crystalline and amorphous hosts. In wide band-gap semiconductors like ScN, the existing deep levels can capture or emit the mobile charges, and can be ionized with the loss or capture of the carriers which are the fundamental basis of concept for smart optic materials. The band gap shrinkage or splitting with dopants supports the possibility of this concept. In the present work, a semi-metallic material (ScN) was doped with rare earth elements (Er, Ho) and tested under an applied electric field to characterize spectral and refractive index shifts by either Stark or Zeeman Effect. These effects can be verified using the UV-Vis spectroscopy, the Hall Effect measurement and the ellipsometric spectroscopy. The optical band gaps of ScN doped with Er and doped with Ho were experimentally estimated as 2.33eV and 2.24eV ( 0.2eV) respectively. This is less than that of undoped ScN (2.5 0.2eV). The red-shifted absorption onset is a direct evidence for the decrease of band gap energy (Eg), and the broadening of valence band states is attributable to the doping cases. A decrease in refractive index with an applied field was observed as a small shift in absorption coefficient using a variable angle spectroscopic ellipsometer. In the presence of an electric field, mobile carriers are redistributed within the space charge region (SCR) to produce this electro-refractive effect. The shift in refractive index is also affected by the density and location of deep potential wells within the SCR. In addition, the microstructure change was observed by a TEM analysis. These results give an insight for future applications for the field-controlled spectrally active material systems.

Spectroscopic ellipsometry for analysis of polycrystalline thin-film photovoltaic devices and prediction of external quantum efficiency

NASA Astrophysics Data System (ADS)

Ibdah, Abdel-Rahman; Koirala, Prakash; Aryal, Puruswottam; Pradhan, Puja; Marsillac, Sylvain; Rockett, Angus A.; Podraza, Nikolas J.; Collins, Robert W.

2017-11-01

Complete polycrystalline thin-film photovoltaic (PV) devices employing CuIn1-xGaxSe2/CdS and CdS/CdTe heterojunctions have been studied by ex situ spectroscopic ellipsometry (SE). In this study, layer thicknesses have been extracted along with photon energy independent parameters such as compositions that describe the dielectric function spectra ε(E) of the individual layers. For accurate ex situ SE analysis of these PV devices, a database of ε(E) spectra is required for all thin film component materials used in each of the two absorber technologies. When possible, database measurements are performed by applying SE in situ immediately after deposition of the thin film materials and after cooling to room temperature in order to avoid oxidation and surface contamination. Determination of ε(E) from the resulting in situ SE data requires structural information that can be obtained from analysis of SE data acquired in real time during the deposition process. From the results of ex situ analysis of the complete CuIn1-xGaxSe2 (CIGS) and CdTe PV devices, the deduced layer thicknesses in combination with the parameters describing ε(E) can be employed in further studies that simulate the external quantum efficiency (EQE) spectra of the devices. These simulations have been performed here by assuming that all electron-hole pairs generated within the active layers, i.e. layers incorporating a dominant absorber component (either CIGS or CdTe), are separated and collected. The active layers may include not only the bulk absorber but also window and back contact interface layers, and individual current contributions from these layers have been determined in the simulations. In addition, the ex situ SE analysis results enable calculation of the absorbance spectra for the inactive layers and the overall reflectance spectra, which lead to quantification of all optical losses in terms of a current density deficit. Mapping SE can be performed given the high speed of multichannel ellipsometers employing array detection, and the resulting EQE simulation capability has wide applications in predicting large area PV module output. The ultimate goal is an on-line capability that enables prediction of PV sub-cell current output as early as possible in the production process.

Caracterisation de nanofilms polymeriques deposes par plasma froid : Stabilite et proprietes mecaniques

NASA Astrophysics Data System (ADS)

Barrette, Jeremie

The current project is inscribed in the research axis on bioactive coatings of Dr. Sophie Lerouge's Laboratoire de Biomatériaux endovasculaires (LBeV). The aim of our work was to extract mechanical properties of a new plasma polymer called L-PPE :N (developed to enhance healing around stent-graft) and determine the effect of various experimental parameters on the stability behavior of our thin films (hundred nanometer thick coatings). Subsidiary to these goals, we also had in mind to test whether usual methods for characterizing polymers and films were applicable on our cold-plasma deposited material. Properties concerned by our endeavor included Young's modulus, hardness, storage and loss modulus, resistance to tearing, ultimate strain and aqueous stability under different temperature and pH for films of varying ratio of gases and thicknesses. Apparatus and work hypothesis used to succeed in our characterization work included, but was not limited to: a quartz crystal dissipative microbalance (QCM-D), a nanoindenter, an ellipsometer, and a tensile testing bench specifically designed for microscopic observation. Hypothesis attached to these methods are that each of these will work as intended for the characterization of our material. Furthermore, we also need to consider the properties of our film as constant throughout its volume (surface-wise for QCM-D analysis and thickness-wise for nanoindentation). QCM-D results allowed us to determine the best compromise of deposition gas ratio R=NH3/C2H4 of L-PPE:N for our biomedical application to be 0.75, from a stability and bioactivity point of view. Starting from that information, we submitted ratio 0.75 films to temperature, thickness and pH essays to make sure they could handle every situation we could need to put them through. Nanoindentation essays have helped us finding reduced modulus and hardness of 8.0 and 0.4 GPa for the 2 µm coating and 10.4 and 0.5 GPa for the 200 nm film, respectively. These values are greater than other biomaterials currently in use, and similar to other cold plasma materials. Further improvements to this work include, at this point of the L-PPE:N development, to start studying the impact of conventional sterilization methods on the stability, mechanical and biological properties of our film, and to submit our coating to a testing bench designed specifically to mimic the insertion and deployment of a stent-graft, in order to verify the structural integrity of the film afterwards.

High-Reflectivity Multi-Layer Coatings for the CLASP Sounding Rocket Project

NASA Technical Reports Server (NTRS)

Narukage, Noriyuki; Kano, Ryohei; Bando, Takamasa; Ishikawa, Ryoko; Kubo, Masahito; Katsukawa, Yukio; Ishikawa, Shin-nosuke; Kobiki, Toshihiko; Giono, Gabriel; Auchere, Frederic;

Solar Lyman-Alpha Polarization Observation of the Chromosphere and Transition Region by the Sounding Rocket Experiment CLASP

NASA Technical Reports Server (NTRS)

Narukage, Noriyuki; Kano, Ryohei; Bando, Takamasa; Ishikawa, Ryoko; Kubo, Masahito; Katsukawa, Yukio; Ishikawa, Shinnosuke; Hara, Hiroshi; Suematsu, Yoshinori; Giono, Gabriel;

Optical Metrology for CIGS Solar Cell Manufacturing and its Cost Implications

NASA Astrophysics Data System (ADS)

Sunkoju, Sravan Kumar

Solar energy is a promising source of renewable energy which can meet the demand for clean energy in near future with advances in research in the field of photovoltaics and cost reduction by commercialization. Availability of a non-contact, in-line, real time robust process control strategies can greatly aid in reducing the gap between cell and module efficiencies, thereby leading to cost-effective large-scale manufacturing of high efficiency CIGS solar cells. In order to achieve proper process monitoring and control for the deposition of the functional layers of CuIn1-xGaxSe 2 (CIGS) based thin film solar cell, optical techniques such as spectroscopic reflectometry and polarimetry are advantageous because they can be set up in an unobtrusive manner in the manufacturing line, and collect data in-line and in-situ. The use of these techniques requires accurate optical models that correctly represent the properties of the layers being deposited. In this study, Spectroscopic ellipsometry (SE) has been applied for the characterization of each individual stage of CIGS layers deposited using the 3-stage co-evaporation process along with the other functional layers. Dielectric functions have been determined for the energy range from 0.7 eV to 5.1 eV. Critical-point line-shape analysis was used in this study to determine the critical point energies of the CIGS based layers. To control the compositional and thickness uniformity of all the functional layers during the fabrication of CIGS solar cells over large areas, multilayer photovoltaics (PV) stack optical models were developed with the help of extracted dielectric functions. In this study, mapping capability of RC2 spectroscopic ellipsometer was used to map all the functional layer thicknesses of a CIGS solar cell in order to probe the spatial non-uniformities that can affect the performance of a cell. The optical functions for each of the stages of CIGS 3-stage deposition process along with buffer layer and transparent conducting oxide (TCO) bi-layer, thus derived were used in a fiber optic-based spectroscopic reflectometry optical monitoring system installed in the pilot line at the PVMC's Halfmoon facility. Results obtained from this study show that the use of regular fiber optics, instead of polarization-maintaining fiber optics, is sufficient for the purpose of process monitoring. Also, the technique does not need to be used "in-situ", but the measurements can be taken in-line, and are applicable to a variety of deposition techniques used for different functional layers deposited on rigid or flexible substrates. In addition, effect of Cu concentration on the CIGS optical properties has been studied. Mixed CIGS/Cu2-xSe phase was observed at the surface at the end of the second stage of 3-stage deposition process, under Cu-rich conditions. A significant change in optical behavior of CIGS due to Cu2-xSe at the surface was observed under Cu-rich conditions, which can be used as end-point detection method to move from 2nd stage to 3rd stage in the deposition process. Developed optical functions were applied to in-line reflectance measurements not only to identify the Cu2-xSe phase at the surface but also to measure the thickness of the mixed CIGS/Cu2-xSe layer. This spectroscopic reflectometry based in-line process control technique can be used for end-point detection as well as to control thickness during the preparation of large area CIGS films. These results can assist in the development of optical process-control tools for the manufacturing of high quality CIGS based photovoltaic cells, increasing the uptime and yield of the production line. Finally, to understand the cost implications, low cost potential of two different deposition technologies has been studied on both rigid and flexible substrates with the help of cost analysis. Cost advantages of employing a contactless optics based process control technique have been investigated in order to achieve a low cost of < 0.5 $/W for CIGS module production. Based on cost analysis, one of the best strategies for achieving the low cost targets would be increasing manufacturing throughput, using roll-to-roll thin-film module manufacturing, with co-evaporation and chemical bath deposition processes for absorber and buffer layer respectively, while applying a low-cost process control technique such as spectroscopic reflectometry to improve module efficiencies and maintain high yield.