Anomalous x-ray diffraction on InAs/GaAs quantum dot systems

NASA Astrophysics Data System (ADS)

Schulli, T. U.; Sztucki, M.; Chamard, V.; Metzger, T. H.; Schuh, D.

2002-07-01

Free-standing InAs quantum dots on a GaAs (001) substrate have been investigated using grazing incidence x-ray diffraction. To suppress the strong scattering contribution from the GaAs substrate, we performed anomalous diffraction experiments at the superstructure (200) reflection, showing that the relative intensities from the dots and the substrate undergo a significant change with the x-ray energy below and above the As K edge. Since the signal from the substrate material can essentially be suppressed, this method is ideally suited for the investigation of strain, shape, and interdiffusion of buried quantum dots and quantum dots embedded in heteroepitaxial multilayers. In addition, we show that it can be used as a tool for studying wetting layers.

Growth and characterization of InAs sub-monolayer quantum dots with varying fractional coverage

NASA Astrophysics Data System (ADS)

Mukherjee, S.; Pradhan, A.; Mukherje, S.; Maitra, T.; Sengupta, S.; Chakrabarti, S.; Nayak, A.; Bhunia, S.

2018-04-01

We have studied the optical properties of InAs sub monolayer (SML) quantum dots in GaAs quantum well with InAs average deposition below one monolayer (ML) [0.3 - 0.8 ML] in Molecular Beam Epitaxy (MBE) growth system. The samples have exhibited sharp photoluminescence peak at low temperature (3.3 K) which could be tuned in the near infrared (NIR) region (1.42 eV-1.47 eV) by controlling the InAs SML coverage.

Analysis of Elastic and Electrical Fields in Quantum Structures by Novel Green’s Functions and Related Boundary Integral Methods

DTIC Science & Technology

2010-12-01

arbitrarily shaped polygon QWR inclusion/inhomogeneity with eigenstrain ∗Ijγ in an anisotropic substrate... eigenstrain *ijγ is applied to the QWR which is an arbitrarily shaped polygon .................................. 42 3.2 A square InAs QWR embedded in...the QWR domain V and to 0 outside. Figure 2.1 An arbitrarily shaped polygon QWR inclusion/inhomogeneity with eigenstrain ∗Ijγ in an anisotropic

Effect of doping on room temperature carrier escape mechanisms in InAs/GaAs quantum dot p-i-n junction photovoltaic cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sellers, D. G.; Chen, E. Y.; Doty, M. F.

2016-05-21

We investigate the effect of doping on the mechanisms of carrier escape from intermediate states in delta-doped InAs/GaAs intermediate band solar cells. The intermediate states arise from InAs quantum dots embedded in a GaAs p-i-n junction cell. We find that doping the sample increases the number of excited-state carriers participating in a cycle of trapping and carrier escape via thermal, optical, and tunneling mechanisms. However, we find that the efficiency of the optically-driven carrier escape mechanism is independent of doping and remains small.

Transformation of self-assembled InAs/InP quantum dots into quantum rings without capping.

PubMed

Sormunen, Jaakko; Riikonen, Juha; Mattila, Marco; Tiilikainen, Jouni; Sopanen, Markku; Lipsanen, Harri

2005-08-01

Transformation of self-assembled InAs quantum dots (QDs) on InP(100) into quantum rings (QRs) is studied. In contrast to the typical approach to III--V semiconductor QR growth, the QDs are not capped to form rings. Atomic force micrographs reveal a drastic change from InAs QDs into rings after a growth interruption in tertiarybutylphosphine ambient. Strain energy relief in the InAs QD is discussed and a mechanism for dot-to-ring transformation by As/P exchange reactions is proposed.

Effect of a low-temperature-grown GaAs layer on InAs quantum-dot photoluminescence

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kosarev, A. N.; Chaldyshev, V. V., E-mail: chald.gvg@mail.ioffe.ru; Preobrazhenskii, V. V.

2016-11-15

The photoluminescence of InAs semiconductor quantum dots overgrown by GaAs in the low-temperature mode (LT-GaAs) using various spacer layers or without them is studied. Spacer layers are thin GaAs or AlAs layers grown at temperatures normal for molecular-beam epitaxy (MBE). Direct overgrowth leads to photoluminescence disappearance. When using a thin GaAs spacer layer, the photoluminescence from InAs quantum dots is partially recovered; however, its intensity appears lower by two orders of magnitude than in the reference sample in which the quantum-dot array is overgrown at normal temperature. The use of wider-gap AlAs as a spacer-layer material leads to the enhancementmore » of photoluminescence from InAs quantum dots, but it is still more than ten times lower than that of reference-sample emission. A model taking into account carrier generation by light, diffusion and tunneling from quantum dots to the LT-GaAs layer is constructed.« less

Polarization, spectral, and spatial emission characteristics of chiral semiconductor nanostructures

NASA Astrophysics Data System (ADS)

Maksimov, A. A.; Peshcherenko, A. B.; Filatov, E. V.; Tartakovskii, I. I.; Kulakovskii, V. D.; Tikhodeev, S. G.; Lobanov, S. V.; Schneider, C.; Höfling, S.

2017-11-01

A detailed study of the degree of circular polarization and the angular dependence of the emission spectra of an array of InAs quantum dots embedded in GaAs photonic nanostructures with chiral symmetry in the absence of an external magnetic field is carried out. A strong angular dependence of the spectra and the degree of circular polarization of radiation from quantum dots, as well as a significant effect of the lattice period of the photonic crystal on the radiation characteristics, is observed. The dispersion of photonic modes near the (±3, 0) and (±2, ±2) Bragg resonances is investigated in detail. The experimentally observed polarization, spectral, and angular characteristics of the quantum-dot emission are explained in the framework of a theory describing radiative processes in chiral photonic nanostructures.

Spin–cavity interactions between a quantum dot molecule and a photonic crystal cavity

PubMed Central

Vora, Patrick M.; Bracker, Allan S.; Carter, Samuel G.; Sweeney, Timothy M.; Kim, Mijin; Kim, Chul Soo; Yang, Lily; Brereton, Peter G.; Economou, Sophia E.; Gammon, Daniel

2015-01-01

The integration of InAs/GaAs quantum dots into nanophotonic cavities has led to impressive demonstrations of cavity quantum electrodynamics. However, these demonstrations are primarily based on two-level excitonic systems. Efforts to couple long-lived quantum dot electron spin states with a cavity are only now succeeding. Here we report a two-spin–cavity system, achieved by embedding an InAs quantum dot molecule within a photonic crystal cavity. With this system we obtain a spin singlet–triplet Λ-system where the ground-state spin splitting exceeds the cavity linewidth by an order of magnitude. This allows us to observe cavity-stimulated Raman emission that is highly spin-selective. Moreover, we demonstrate the first cases of cavity-enhanced optical nonlinearities in a solid-state Λ-system. This provides an all-optical, local method to control the spin exchange splitting. Incorporation of a highly engineerable quantum dot molecule into the photonic crystal architecture advances prospects for a quantum network. PMID:26184654

Increased InAs quantum dot size and density using bismuth as a surfactant

NASA Astrophysics Data System (ADS)

Dasika, Vaishno D.; Krivoy, E. M.; Nair, H. P.; Maddox, S. J.; Park, K. W.; Jung, D.; Lee, M. L.; Yu, E. T.; Bank, S. R.

2014-12-01

We have investigated the growth of self-assembled InAs quantum dots using bismuth as a surfactant to control the dot size and density. We find that the bismuth surfactant increases the quantum dot density, size, and uniformity, enabling the extension of the emission wavelength with increasing InAs deposition without a concomitant reduction in dot density. We show that these effects are due to bismuth acting as a reactive surfactant to kinetically suppress the surface adatom mobility. This mechanism for controlling quantum dot density and size has the potential to extend the operating wavelength and enhance the performance of various optoelectronic devices.

Formation of nanogaps in InAs nanowires by selectively etching embedded InP segments.

PubMed

Schukfeh, M I; Storm, K; Hansen, A; Thelander, C; Hinze, P; Beyer, A; Weimann, T; Samuelson, L; Tornow, M

2014-11-21

We present a method to fabricate nanometer scale gaps within InAs nanowires by selectively etching InAs/InP heterostructure nanowires. We used vapor-liquid-solid grown InAs nanowires with embedded InP segments of 10-60 nm length and developed an etching recipe to selectively remove the InP segment. A photo-assisted wet etching process in a mixture of acetic acid and hydrobromic acid gave high selectivity, with accurate removal of InP segments down to 20 nm, leaving the InAs wire largely unattacked, as verified using scanning electron and transmission electron microscopy. The obtained nanogaps in InAs wires have potential as semiconducting electrodes to investigate electronic transport in nanoscale objects. We demonstrate this functionality by dielectrophoretically trapping 30 nm diameter gold nanoparticles into the gap.

Interplay of morphology, composition, and optical properties of InP-based quantum dots emitting at the 1.55 μ m telecom wavelength

NASA Astrophysics Data System (ADS)

Carmesin, C.; Schowalter, M.; Lorke, M.; Mourad, D.; Grieb, T.; Müller-Caspary, K.; Yacob, M.; Reithmaier, J. P.; Benyoucef, M.; Rosenauer, A.; Jahnke, F.

2017-12-01

Results for the development and detailed analysis of self-organized InAs/InAlGaAs/InP quantum dots suitable for single-photon emission at the 1.55 μ m telecom wavelength are reported. The structural and compositional properties of the system are obtained from high-resolution scanning transmission electron microscopy of individual quantum dots. The system is composed of almost pure InAs quantum dots embedded in quaternary InAlGaAs barrier material, which is lattice matched to the InP substrate. When using the measured results for a representative quantum-dot geometry as well as experimentally reconstructed alloy concentrations, a combination of strain-field and electronic-state calculations is able to reproduce the quantum-dot emission wavelength in agreement with the experimentally determined photoluminescence spectrum. The inhomogeneous broadening of the latter can be related to calculated variations of the emission wavelength for the experimentally deduced In-concentration fluctuations and size variations.

Adding GaAs Monolayers to InAs Quantum-Dot Lasers on (001) InP

NASA Technical Reports Server (NTRS)

Qiu, Yueming; Chacon, Rebecca; Uhl, David; Yang, Rui

2005-01-01

In a modification of the basic configuration of InAs quantum-dot semiconductor lasers on (001)lnP substrate, a thin layer (typically 1 to 2 monolayer thick) of GaAs is incorporated into the active region. This modification enhances laser performance: In particular, whereas it has been necessary to cool the unmodified devices to temperatures of about 80 K in order to obtain lasing at long wavelengths, the modified devices can lase at wavelengths of about 1.7 microns or more near room temperature. InAs quantum dots self-assemble, as a consequence of the lattice mismatch, during epitaxial deposition of InAs on ln0.53Ga0.47As/lnP. In the unmodified devices, the quantum dots as thus formed are typically nonuniform in size. Strainenergy relaxation in very large quantum dots can lead to poor laser performance, especially at wavelengths near 2 microns, for which large quantum dots are needed. In the modified devices, the thin layers of GaAs added to the active regions constitute potential-energy barriers that electrons can only penetrate by quantum tunneling and thus reduce the hot carrier effects. Also, the insertion of thin GaAs layer is shown to reduce the degree of nonuniformity of sizes of the quantum dots. In the fabrication of a batch of modified InAs quantum-dot lasers, the thin additional layer of GaAs is deposited as an interfacial layer in an InGaAs quantum well on (001) InP substrate. The device as described thus far is sandwiched between InGaAsPy waveguide layers, then further sandwiched between InP cladding layers, then further sandwiched between heavily Zn-doped (p-type) InGaAs contact layer.

Magneto-optical response of InAs lens-shaped self-assembled quantum dots

NASA Technical Reports Server (NTRS)

Klimeck, G.; Oyafuso, F.; Lee, S.; Allmen, P. von

2003-01-01

In this work, we demonstrate a realistic modeling of the electronic structure for InAs self-assembled quantum dots and investigate the magneto-optical response, i.e., Zeeman splitting and transition rates between electron and hole levels.

Effect of growth interruption in 1.55 μm InAs/InAlGaAs quantum dots on InP grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Jung, Daehwan; Ironside, Daniel J.; Bank, Seth R.; Gossard, Arthur C.; Bowers, John E.

2018-05-01

We report the effect of growth interruptions on the structural and optical properties of InAs/InAlGaAs/InP quantum dots using molecular beam epitaxy. We find that the surface quantum dots experience an unintended ripening process during the sample cooling stage, which reshapes the uncapped InAs nanostructures. To prevent this, we performed a partial capping experiment to effectively inhibit structural reconfiguration of surface InAs nanostructures during the cooling stage, revealing that InAs nanostructures first form quantum dashes and then transform into quantum dots via a ripening process. Our result suggests that the appearance of buried InAs/InAlGaAs nanostructures can be easily misunderstood by surface analysis.

A modified gradient approach for the growth of low-density InAs quantum dot molecules by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Sharma, Nandlal; Reuter, Dirk

2017-11-01

Two vertically stacked quantum dots that are electronically coupled, so called quantum dot molecules, are of great interest for the realization of solid state building blocks for quantum communication networks. We present a modified gradient approach to realize InAs quantum dot molecules with a low areal density so that single quantum dot molecules can be optically addressed. The individual quantum dot layers were prepared by solid source molecular beam epitaxy depositing InAs on GaAs(100). The bottom quantum dot layer has been grown without substrate rotation resulting in an In-gradient across the surface, which translated into a density gradient with low quantum dot density in a certain region of the wafer. For the top quantum dot layer, separated from the bottom quantum dot layer by a 6 nm thick GaAs barrier, various InAs amounts were deposited without an In-gradient. In spite of the absence of an In-gradient, a pronounced density gradient is observed for the top quantum dots. Even for an In-amount slightly below the critical thickness for a single dot layer, a density gradient in the top quantum dot layer, which seems to reproduce the density gradient in the bottom layer, is observed. For more or less In, respectively, deviations from this behavior occur. We suggest that the obvious influence of the bottom quantum dot layer on the growth of the top quantum dots is due to the strain field induced by the buried dots.

Steering of quantum waves: Demonstration of Y-junction transistors using InAs quantum wires

NASA Astrophysics Data System (ADS)

Jones, Gregory M.; Qin, Jie; Yang, Chia-Hung; Yang, Ming-Jey

2005-06-01

In this paper we demonstrate using an InAs quantum wire Y-branch switch that the electron wave can be switched to exit from the two drains by a lateral gate bias. The gating modifies the electron wave functions as well as their interference pattern, causing the anti-correlated, oscillatory transconductances. Our result suggests a new transistor function in a multiple-lead ballistic quantum wire system.

Improved dot size uniformity and luminescense of InAs quantum dots on InP substrate

NASA Technical Reports Server (NTRS)

Qiu, Y.; Uhl, D.

2002-01-01

InAs self-organized quantum dots have been grown in InGaAs quantum well on InP substrates by metalorganic vapor phase epitaxy. Atomic Force Microscopy confirmed of quantum dot formation with dot density of 3X10(sup 10) cm(sup -2). Improved dot size uniformity and strong room temperature photoluminescence up to 2 micron were observed after modifying the InGaAs well.

Growth and optical characteristics of InAs quantum dot structures with tunnel injection quantum wells for 1.55 μ m high-speed lasers

NASA Astrophysics Data System (ADS)

Bauer, Sven; Sichkovskyi, Vitalii; Reithmaier, Johann Peter

2018-06-01

InP based lattice matched tunnel injection structures consisting of a InGaAs quantum well, InAlGaAs barrier and InAs quantum dots designed to emit at 1.55 μ m were grown by molecular beam epitaxy and investigated by photoluminescence spectroscopy and atomic force microscopy. The strong influence of quantum well and barrier thicknesses on the samples emission properties at low and room temperatures was investigated. The phenomenon of a decreased photoluminescence linewidth of tunnel injection structures compared to a reference InAs quantum dots sample could be explained by the selection of the emitting dots through the tunneling process. Morphological investigations have not revealed any effect of the injector well on the dot formation and their size distribution. The optimum TI structure design could be defined.

Temperature characteristics of epitaxially grown InAs quantum dot micro-disk lasers on silicon for on-chip light sources

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wan, Yating; Li, Qiang; Lau, Kei May, E-mail: eekmlau@ust.hk

2016-07-04

Temperature characteristics of optically pumped micro-disk lasers (MDLs) incorporating InAs quantum dot active regions are investigated for on-chip light sources. The InAs quantum dot MDLs were grown on V-groove patterned (001) silicon, fully compatible with the prevailing complementary metal oxide-semiconductor technology. By combining the high-quality whispering gallery modes and 3D confinement of injected carriers in quantum dot micro-disk structures, we achieved lasing operation from 10 K up to room temperature under continuous optical pumping. Temperature dependences of the threshold, lasing wavelength, slope efficiency, and mode linewidth are examined. An excellent characteristic temperature T{sub o} of 105 K has been extracted.

Signatures of Induced Superconductivity in NbTi Contacted InAs Quantum Wells

NASA Astrophysics Data System (ADS)

McFadden, Anthony; Shabani, Javad; Shojaei, Borzoyeh; Lee, Joon Sue; Palmstrøm, Chris

We have studied electrical transport through InAs quantum wells grown by MBE with unannealed superconducting NbTi contacts deposited ex-situ and patterned by optical photolithography. Characterization of the InAs 2DEG's without superconducting contacts yields typical mobilities greater than 100,000 cm2/Vs at a density of 4e11 cm-2. NbTi-InAs-NbTi (SNS) and NbTi-InAs (SN) devices with dimensions greater than 1 µm are fabricated using optical lithography. Although the dimensions of the fabricated SNS devices are too large to observe a supercurrent, signatures of superconductivity induced in the InAs are present. We observe two superconducting critical temperatures: one of the NbTi leads (Tc~8K), and a second (Tc <4.5K) attributed to superconductivity induced in the InAs channel. dI/dV vs V spectroscopy on SNS junctions below the second critical temperature shows a conductance maximum at zero applied voltage while conductance minima appear at finite bias voltage which is attributed to the presence of an induced superconducting gap in the InAs quantum well. This work has been supported by Microsoft research.

Investigation of photoconductivity of individual InAs/GaAs(001) quantum dots by Scanning Near-field Optical Microscopy

NASA Astrophysics Data System (ADS)

Filatov, D. O.; Kazantseva, I. A.; Baidus', N. V.; Gorshkov, A. P.; Mishkin, V. P.

2017-10-01

The spatial distribution of the photocurrent in the input window plane of a GaAs-based p-i-n photodiode with embedded self-assembled InAs quantum dots (QDs) has been studied with the photoexcitation through a Scanning Near-field Optical Microscope (SNOM) probe at the emission wavelength greater than the intrinsic absorption edge of the host material (GaAs). The inhomogeneities related to the interband absorption in the individual InAs/GaAs(001) QDs have been observed in the photocurrent SNOM images. Thus, the possibility of imaging the individual InAs/GaAs(001) QDs in the photocurrent SNOM images with the lateral spatial resolution ˜ 100 nm (of the same order of magnitude as the SNOM probe aperture size) has been demonstrated.

Metamorphic InAs quantum well lasers on InP substrates with different well shapes and waveguides

NASA Astrophysics Data System (ADS)

Gu, Y.; Zhang, Y. G.; Chen, X. Y.; Ma, Y. J.; Ji, W. Y.; Xi, S. P.; Du, B.; Shi, Y. H.; Li, A. Z.

2017-11-01

The effects of well shapes and waveguide materials on InP-based InAs quantum well lasers have been investigated. The laser structures were grown on metamorphic In0.65Al0.35As buffers. A novel trapezoidal quantum well composed of InyGa1-yAs grading and InAs layer was used to improve the quality of quantum well. Quaternary In0.65Al0.2Ga0.15As waveguide was applied instead of ternary In0.65Ga0.35As to enhance the carrier injection. The material qualities have been characterized by X-ray diffraction, transmission electron microscopy and photoluminescence measurements, while the device properties of the lasers with various structures were investigated at different temperatures. Results show that the laser performances have been improved by the use of trapezoidal quantum wells and InAlGaAs waveguides.

Fabrication of InAs quantum ring nanostructures on GaSb by droplet epitaxy

NASA Astrophysics Data System (ADS)

Dahiya, Vinita; Zamiri, Marziyeh; So, Mo Geun; Hollingshead, David A.; Kim, JongSu; Krishna, Sanjay

2018-06-01

In this article, we report the formation of InAs quantum ring nanostructures (QRNs) on GaSb (0 0 1) surface by droplet epitaxy (DE) mode using molecular beam epitaxy. We examined the impact of various growth conditions, including substrate temperature (Ts), As2 beam equivalent pressure (BEP) and surface stoichiometry, on the shape, density and size of the InAs QRNs. We confirmed that the InAs QRNs have better rotational symmetry at relatively high Ts and low As2 BEP. The symmetry of the QRN is due to the isotropic indium (In) out-migration along [1 1 0] and [1 -1 0], controlled via change in stoichiometry (surface As coverage) with temperature and the As2 BEP. These results indicate that we can realize InAs QRN on GaSb surface by DE process.

Development of a Quantum Dot, 0.6 eV InGaAs Thermophotovoltaic (TPV) Converter

NASA Technical Reports Server (NTRS)

Forbes, David; Sinharoy, Samar; Raffalle, Ryne; Weizer, Victor; Homann, Natalie; Valko, Thomas; Bartos,Nichole; Scheiman, David; Bailey, Sheila

2007-01-01

Thermophotovoltaic (TPV) power conversion has to date demonstrated conversion efficiencies exceeding 20% when coupled to a heat source. Current III-V semiconductor TPV technology makes use of planar devices with bandgaps tailored to the heat source. The efficiency can be improved further by increasing the collection efficiency through the incorporation of InAs quantum dots. The use of these dots can provide sub-gap absorption and thus improve the cell short circuit current without the normal increase in dark current associated with lowering the bandgap. We have developed self-assembled InAs quantum dots using the Stranski-Krastanov growth mode on 0.74 eV In0.53GaAs lattice-matched to InP and also on lattice-mismatched 0.6 eV In0.69GaAs grown on InP through the use of a compositionally graded InPAsx buffer structure, by metalorganic vapor phase epitaxy (MOVPE). Atomic force microscopy (AFM) measurements showed that the most reproducible dot pattern was obtained with 5 monolayers of InAs grown at 450 C. The lattice mismatch between InAs and In0.69GaAs is only 2.1%, compared to 3.2% between InAs and In0.53GaAs. The smaller mismatch results in lower strain, making dot formation somewhat more complicated, resulting in quantum dashes, rather than well defined quantum dots in the lattice-mismatched case. We have fabricated 0.6 eV InGaAs planer TPV cells with and without the quantum dashes

Fabrication of GaAs/Al0.3Ga0.7As multiple quantum well nanostructures on (100) si substrate using a 1-nm InAs relief layer.

PubMed

Oh, H J; Park, S J; Lim, J Y; Cho, N K; Song, J D; Lee, W; Lee, Y J; Myoung, J M; Choi, W J

2014-04-01

Nanometer scale thin InAs layer has been incorporated between Si (100) substrate and GaAs/Al0.3Ga0.7As multiple quantum well (MQW) nanostructure in order to reduce the defects generation during the growth of GaAs buffer layer on Si substrate. Observations based on atomic force microscopy (AFM) and transmission electron microscopy (TEM) suggest that initiation and propagation of defect at the Si/GaAs interface could be suppressed by incorporating thin (1 nm in thickness) InAs layer. Consequently, the microstructure and resulting optical properties improved as compared to the MQW structure formed directly on Si substrate without the InAs layer. It was also observed that there exists some limit to the desirable thickness of the InAs layer since the MQW structure having thicker InAs layer (4 nm-thick) showed deteriorated properties.

Combined atomic force microscopy and photoluminescence imaging to select single InAs/GaAs quantum dots for quantum photonic devices.

PubMed

Sapienza, Luca; Liu, Jin; Song, Jin Dong; Fält, Stefan; Wegscheider, Werner; Badolato, Antonio; Srinivasan, Kartik

2017-07-24

We report on a combined photoluminescence imaging and atomic force microscopy study of single, isolated self-assembled InAs quantum dots. The motivation of this work is to determine an approach that allows to assess single quantum dots as candidates for quantum nanophotonic devices. By combining optical and scanning probe characterization techniques, we find that single quantum dots often appear in the vicinity of comparatively large topographic features. Despite this, the quantum dots generally do not exhibit significant differences in their non-resonantly pumped emission spectra in comparison to quantum dots appearing in defect-free regions, and this behavior is observed across multiple wafers produced in different growth chambers. Such large surface features are nevertheless a detriment to applications in which single quantum dots are embedded within nanofabricated photonic devices: they are likely to cause large spectral shifts in the wavelength of cavity modes designed to resonantly enhance the quantum dot emission, thereby resulting in a nominally perfectly-fabricated single quantum dot device failing to behave in accordance with design. We anticipate that the approach of screening quantum dots not only based on their optical properties, but also their surrounding surface topographies, will be necessary to improve the yield of single quantum dot nanophotonic devices.

Lasing characteristics of InAs quantum dot laers on InP substrate

NASA Technical Reports Server (NTRS)

Yang, Y.; Qiu, D.; Uhl, R.; Chacon, R.

2003-01-01

Single-stack InAs self-assembled quantum dots (QD) lasers based on InP substrate have been grown by metalorganic vapor phase epitaxy. The narrow ridge waveguide lasers lased up to 260 K in continuous wave operation, and near room temperature in pulsed mode, with wavelengths between 1.59 to 1.74 mu m.

Growth patterns of self-assembled InAs quantum dots near the two-dimensional to three-dimensional transition

NASA Astrophysics Data System (ADS)

Colocci, M.; Bogani, F.; Carraresi, L.; Mattolini, R.; Bosacchi, A.; Franchi, S.; Frigeri, P.; Rosa-Clot, M.; Taddei, S.

1997-06-01

Self-assembled InAs quantum dots have been grown by molecular beam epitaxy in such a way as to obtain a continuous variation of InAs coverages across the wafer. Structured photoluminescence spectra are observed after excitation of a large number of dots; deconvolution into Gaussian components yields narrow emission bands (full width at half-maximum 20-30 meV) separated in energy by an average spacing of 30-40 meV. We ascribe the individual bands of the photoluminescence spectra after low excitation to families of dots with similar shapes and with heights differing by one monolayer, as strongly supported by numerical calculations of the fundamental electronic transitions in quantum dot structures.

Self-assembly of InAs ring complexes on InP substrates by droplet epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Noda, T.; Mano, T.; Jo, M.

We report the self-assembly of InAs ring complexes on InP (100) substrates by droplet epitaxy. Single-ring, ring-disk complex, and concentric double-ring structures were formed by controlling the As beam flux and substrate temperature. A clear photoluminescence signal was detected in a sample where InAs rings were embedded in InGaAs.

1.3 μm single-photon emission from strain-coupled bilayer of InAs/GaAs quantum dots at the temperature up to 120 K

NASA Astrophysics Data System (ADS)

Xue, Yongzhou; Chen, Zesheng; Ni, Haiqiao; Niu, Zhichuan; Jiang, Desheng; Dou, Xiuming; Sun, Baoquan

2017-10-01

We report on 1.3 μm single-photon emission based on a self-assembled strain-coupled bilayer of InAs quantum dots (QDs) embedded in a micropillar Bragg cavity at temperature of liquid nitrogen or even as high as 120 K. The obtained single-photon flux into the first lens of the collection optics is 4.2 × 106 and 3.3 × 106/s at 82 and 120 K, respectively, corresponding to a second-order correlation function at zero delay times of 0.27(2) and 0.28(3). This work reports on the significant effect of the micropillar cavity-related enhancement of QD emission and demonstrates an opportunity to employ telecom band single-photon emitters at liquid nitrogen or even higher temperature.

Stacking InAs quantum dots over ErAs semimetal nanoparticles on GaAs (0 0 1) using molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Zhang, Yuanchang; Eyink, Kurt G.; Grazulis, Lawrence; Hill, Madelyn; Peoples, Joseph; Mahalingam, Krishnamurthy

2017-11-01

Hybrid nanostructures are known to elicit an enhanced optical response. We study the directed alignment of ErAs metal nanoparticle (NP) and InAs quantum dot (QD) using molecular beam eptaxy (MBE) in a GaAs matrix. Due to high surface free energy caused by the crystal structure difference, overgrowth of an ErAs NP with GaAs forms a depression that condenses subsequent InAs adatoms to form an inverted QD self-aligned to the underlying ErAs NP. The ErAs NP growth, GaAs overgrowth, and InAs QD deposition were carefully controlled and studied with transmission electron microscopy (TEM) and atomic force microscopy (AFM) to investigate their effects on the QD-NP alignment.

Photonic engineering of highly linearly polarized quantum dot emission at telecommunication wavelengths

NASA Astrophysics Data System (ADS)

Mrowiński, P.; Emmerling, M.; Schneider, C.; Reithmaier, J. P.; Misiewicz, J.; Höfling, S.; Sek, G.

2018-04-01

In this work, we discuss a method to control the polarization anisotropy of spontaneous emission from neutral excitons confined in quantum-dot-like nanostructures, namely single epitaxial InAs quantum dashes emitting at telecom wavelengths. The nanostructures are embedded inside lithographically defined, in-plane asymmetric photonic mesa structures, which generate polarization-dependent photonic confinement. First, we study the influence of the photonic confinement on the polarization anisotropy of the emission by photoluminescence spectroscopy, and we find evidence of different contributions to a degree of linear polarization (DOLP), i.e., from the quantum dash and the photonic mesa, in total giving rise to DOLP =0.85 . Then, we perform finite-difference time-domain simulations of photonic confinement, and we calculate the DOLP in a dipole approximation showing well-matched results for the established model. Furthermore, by using numerical calculations, we demonstrate several types of photonic confinements where highly linearly polarized emission with DOLP of about 0.9 is possible by controlling the position of a quantum emitter inside the photonic structure. Then, we elaborate on anisotropic quantum emitters allowing for exceeding DOLP =0.95 in an optimized case, and we discuss the ways towards efficient linearly polarized single photon source at telecom bands.

Polarization spectroscopy of positive and negative trions in an InAs quantum dot

NASA Astrophysics Data System (ADS)

Ware, Morgan E.; Bracker, Allan S.; Stinaff, Eric; Gammon, Daniel; Gershoni, David; Korenev, Vladimir L.

2005-02-01

Using polarization-sensitive photoluminescence and photoluminescence excitation spectroscopy, we study single InAs/GaAs self-assembled quantum dots. The dots were embedded in an n-type, Schottky diode structure allowing for control of the charge state. We present here the exciton, singly charged exciton (positive and negative trions), and the twice negatively charged exciton. For non-resonant excitation below the wetting layer, we observed a large degree of polarization memory from the radiative recombination of both the positive and negative trions. In excitation spectra, through the p-shell, we have found several sharp resonances in the emission from the s-shell recombination of the dot in all charged states. Some of these excitation resonances exhibit strong coulomb shifts upon addition of charges into the quantum dot. One particular resonance of the negatively charged trion was found to exhibit a fine structure doublet under circular polarization. This observation is explained in terms of resonant absorption into the triplet states of the negative trion.

Optical investigation of InAs quantum dashes grown on InP(0 0 1) vicinal substrate

NASA Astrophysics Data System (ADS)

Besahraoui, F.; Bouslama, M.; Saidi, F.; Bouzaiene, L.; Hadj Alouane, M. H.; Maaref, H.; Chauvin, N.; Gendry, M.; Lounis, Z.; Ghaffour, M.

2014-01-01

We investigate with photoluminescence (PL) measurements the optoelectronic properties of self-organized InAs quantum dots (QDs) grown on nominal InP(0 0 1) substrate. InAs/InP(0 0 1) QDs are grown by Molecular Beam Epitaxy (MBE) method with optimized conditions in Stranski-Krastanov regime. A lateral coupling behavior was shown by photoluminescence spectroscopy. This phenomena is considered as a degradation source of the optoelectronic properties of InAs/InP(0 0 1) QDs used in lasers applications. In order to overcome this disadvantage behavior, we have studied the optical properties of InAs quantum islands (QIs) grown on vicinal InP(0 0 1) with 2° off miscut angle toward the [1 1 0] direction. From Polarized Photoluminescence (PPL) measurements, we have deduced that InAs quantum nanostructures have quantum dashes (QDas) form elongated in [1-10] direction. From excitation density PL measurements, we have evidenced that the different observed PL peaks are attributed to the emission of InAs QDas of different size. The lateral coupling behavior is completely eliminated in the case of this sample. The temperature-dependent PL measurements show a good thermal stability and an emission wavelength at room temperature around 1.55 μm of the vicinal sample. All these properties prove that this sample possess favorable characteristics for microlasers based devices functioning at room temperature and for optical telecommunication with long range weapon. The broad emission range observed at 300 K of the vicinal sample gives the possibility to use it as an active zone in solar cells and in infrared photodectectors of high optical gain and excellent sensitivity on a wide energy range.

Photovoltaic Performance of a Nanowire/Quantum Dot Hybrid Nanostructure Array Solar Cell.

PubMed

Wu, Yao; Yan, Xin; Zhang, Xia; Ren, Xiaomin

2018-02-23

An innovative solar cell based on a nanowire/quantum dot hybrid nanostructure array is designed and analyzed. By growing multilayer InAs quantum dots on the sidewalls of GaAs nanowires, not only the absorption spectrum of GaAs nanowires is extended by quantum dots but also the light absorption of quantum dots is dramatically enhanced due to the light-trapping effect of the nanowire array. By incorporating five layers of InAs quantum dots into a 500-nm high-GaAs nanowire array, the power conversion efficiency enhancement induced by the quantum dots is six times higher than the power conversion efficiency enhancement in thin-film solar cells which contain the same amount of quantum dots, indicating that the nanowire array structure can benefit the photovoltaic performance of quantum dot solar cells.

Photovoltaic Performance of a Nanowire/Quantum Dot Hybrid Nanostructure Array Solar Cell

NASA Astrophysics Data System (ADS)

Wu, Yao; Yan, Xin; Zhang, Xia; Ren, Xiaomin

2018-02-01

An innovative solar cell based on a nanowire/quantum dot hybrid nanostructure array is designed and analyzed. By growing multilayer InAs quantum dots on the sidewalls of GaAs nanowires, not only the absorption spectrum of GaAs nanowires is extended by quantum dots but also the light absorption of quantum dots is dramatically enhanced due to the light-trapping effect of the nanowire array. By incorporating five layers of InAs quantum dots into a 500-nm high-GaAs nanowire array, the power conversion efficiency enhancement induced by the quantum dots is six times higher than the power conversion efficiency enhancement in thin-film solar cells which contain the same amount of quantum dots, indicating that the nanowire array structure can benefit the photovoltaic performance of quantum dot solar cells.

Infrared Focal Plane Arrays Based on Semiconductor Quantum Dots

DTIC Science & Technology

2002-01-01

an ensemble of self -assembled InAs/GaAs or InAs/InP quantum dots (QDs) are typically in the range of 10-30 monolayers [1]. Here, we report on InAs...photoconductive properties of QDIPs based on self organized InAs quantum dots grown on In.52Al.48As/InP(100), using the MBE technique. Dr. Gendry grew the...composed of 10 layers of self assembled InAs dots, separated by 500 Å thick InAlAs (lattice matched to the semi-insulating InP substrate) barrier

Microscopic Theory and Simulation of Quantum-Well Intersubband Absorption

NASA Technical Reports Server (NTRS)

Li, Jianzhong; Ning, C. Z.

2004-01-01

We study the linear intersubband absorption spectra of a 15 nm InAs quantum well using the intersubband semiconductor Bloch equations with a three-subband model and a constant dephasing rate. We demonstrate the evolution of intersubband absorption spectral line shape as a function of temperature and electron density. Through a detailed examination of various contributions, such as the phase space filling effects, the Coulomb many-body effects and the non-parabolicity effect, we illuminate the underlying physics that shapes the spectra. Keywords: Intersubband transition, linear absorption, semiconductor heterostructure, InAs quantum well

High performance InAs quantum dot lasers on silicon substrates by low temperature Pd-GaAs wafer bonding

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Zihao; Preble, Stefan F.; Yao, Ruizhe

2015-12-28

InAs quantum dot (QD) laser heterostructures have been grown by molecular beam epitaxy system on GaAs substrates, and then transferred to silicon substrates by a low temperature (250 °C) Pd-mediated wafer bonding process. A low interfacial resistivity of only 0.2 Ω cm{sup 2} formed during the bonding process is characterized by the current-voltage measurements. The InAs QD lasers on Si exhibit comparable characteristics to state-of-the-art QD lasers on silicon substrates, where the threshold current density J{sub th} and differential quantum efficiency η{sub d} of 240 A/cm{sup 2} and 23.9%, respectively, at room temperature are obtained with laser bars of cavity length and waveguide ridgemore » of 1.5 mm and 5 μm, respectively. The InAs QD lasers also show operation up to 100 °C with a threshold current density J{sub th} and differential quantum efficiency η{sub d} of 950 A/cm{sup 2} and 9.3%, respectively. The temperature coefficient T{sub 0} of 69 K from 60 to 100 °C is characterized from the temperature dependent J{sub th} measurements.« less

Wet etch methods for InAs nanowire patterning and self-aligned electrical contacts

NASA Astrophysics Data System (ADS)

Fülöp, G.; d'Hollosy, S.; Hofstetter, L.; Baumgartner, A.; Nygård, J.; Schönenberger, C.; Csonka, S.

2016-05-01

Advanced synthesis of semiconductor nanowires (NWs) enables their application in diverse fields, notably in chemical and electrical sensing, photovoltaics, or quantum electronic devices. In particular, indium arsenide (InAs) NWs are an ideal platform for quantum devices, e.g. they may host topological Majorana states. While the synthesis has been continously perfected, only a few techniques have been developed to tailor individual NWs after growth. Here we present three wet chemical etch methods for the post-growth morphological engineering of InAs NWs on the sub-100 nm scale. The first two methods allow the formation of self-aligned electrical contacts to etched NWs, while the third method results in conical shaped NW profiles ideal for creating smooth electrical potential gradients and shallow barriers. Low temperature experiments show that NWs with etched segments have stable transport characteristics and can serve as building blocks of quantum electronic devices. As an example we report the formation of a single electrically stable quantum dot between two etched NW segments.

Two-color single-photon emission from InAs quantum dots: toward logic information management using quantum light.

PubMed

Rivas, David; Muñoz-Matutano, Guillermo; Canet-Ferrer, Josep; García-Calzada, Raúl; Trevisi, Giovanna; Seravalli, Luca; Frigeri, Paola; Martínez-Pastor, Juan P

2014-02-12

In this work, we propose the use of the Hanbury-Brown and Twiss interferometric technique and a switchable two-color excitation method for evaluating the exciton and noncorrelated electron-hole dynamics associated with single photon emission from indium arsenide (InAs) self-assembled quantum dots (QDs). Using a microstate master equation model we demonstrate that our single QDs are described by nonlinear exciton dynamics. The simultaneous detection of two-color, single photon emission from InAs QDs using these nonlinear dynamics was used to design a NOT AND logic transference function. This computational functionality combines the advantages of working with light/photons as input/output device parameters (all-optical system) and that of a nanodevice (QD size of ∼ 20 nm) while also providing high optical sensitivity (ultralow optical power operational requirements). These system features represent an important and interesting step toward the development of new prototypes for the incoming quantum information technologies.

Broadband light sources based on InAs/InGaAs metamorphic quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seravalli, L.; Trevisi, G.; Frigeri, P.

We propose a design for a semiconductor structure emitting broadband light in the infrared, based on InAs quantum dots (QDs) embedded into a metamorphic step-graded In{sub x}Ga{sub 1−x}As buffer. We developed a model to calculate the metamorphic QD energy levels based on the realistic QD parameters and on the strain-dependent material properties; we validated the results of simulations by comparison with the experimental values. On this basis, we designed a p-i-n heterostructure with a graded index profile toward the realization of an electrically pumped guided wave device. This has been done by adding layers where QDs are embedded in In{submore » x}Al{sub y}Ga{sub 1−x−y}As layers, to obtain a symmetric structure from a band profile point of view. To assess the room temperature electro-luminescence emission spectrum under realistic electrical injection conditions, we performed device-level simulations based on a coupled drift-diffusion and QD rate equation model. On the basis of the device simulation results, we conclude that the present proposal is a viable option to realize broadband light-emitting devices.« less

Electric field tunable electron g factor and high asymmetrical Stark effect in InAs1-xNx quantum dots

NASA Astrophysics Data System (ADS)

Zhang, X. W.; Fan, W. J.; Li, S. S.; Xia, J. B.

2007-04-01

The electronic structure, electron g factor, and Stark effect of InAs1-xNx quantum dots are studied by using the ten-band k •p model. It is found that the g factor can be tuned to be zero by the shape and size of quantum dots, nitrogen (N) doping, and the electric field. The N doping has two effects on the g factor: the direct effect increases the g factor and the indirect effect decreases it. The Stark effect in quantum ellipsoids is high asymmetrical and the asymmetry factor may be 319.

Laser location and manipulation of a single quantum tunneling channel in an InAs quantum dot.

PubMed

Makarovsky, O; Vdovin, E E; Patané, A; Eaves, L; Makhonin, M N; Tartakovskii, A I; Hopkinson, M

2012-03-16

We use a femtowatt focused laser beam to locate and manipulate a single quantum tunneling channel associated with an individual InAs quantum dot within an ensemble of dots. The intensity of the directed laser beam tunes the tunneling current through the targeted dot with an effective optical gain of 10(7) and modifies the curvature of the dot's confining potential and the spatial extent of its ground state electron eigenfunction. These observations are explained by the effect of photocreated hole charges which become bound close to the targeted dot, thus acting as an optically induced gate electrode.

Impact of stress relaxation in GaAsSb cladding layers on quantum dot creation in InAs/GaAsSb structures grown on GaAs (001)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bremner, S. P.; Ban, K.-Y.; Faleev, N. N.

2013-09-14

We describe InAs quantum dot creation in InAs/GaAsSb barrier structures grown on GaAs (001) wafers by molecular beam epitaxy. The structures consist of 20-nm-thick GaAsSb barrier layers with Sb content of 8%, 13%, 15%, 16%, and 37% enclosing 2 monolayers of self-assembled InAs quantum dots. Transmission electron microscopy and X-ray diffraction results indicate the onset of relaxation of the GaAsSb layers at around 15% Sb content with intersected 60° dislocation semi-loops, and edge segments created within the volume of the epitaxial structures. 38% relaxation of initial elastic stress is seen for 37% Sb content, accompanied by the creation of amore » dense net of dislocations. The degradation of In surface migration by these dislocation trenches is so severe that quantum dot formation is completely suppressed. The results highlight the importance of understanding defect formation during stress relaxation for quantum dot structures particularly those with larger numbers of InAs quantum-dot layers, such as those proposed for realizing an intermediate band material.« less

Temperature independent infrared responsivity of a quantum dot quantum cascade photodetector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Feng-Jiao; Zhuo, Ning; Liu, Shu-Man, E-mail: liusm@semi.ac.cn

2016-06-20

We demonstrate a quantum dot quantum cascade photodetector with a hybrid active region of InAs quantum dots and an InGaAs quantum well, which exhibited a temperature independent response at 4.5 μm. The normal incident responsivity reached 10.3 mA/W at 120 K and maintained a value of 9 mA/W up to 260 K. It exhibited a specific detectivity above 10{sup 11} cm Hz{sup 1/2} W{sup −1} at 77 K, which remained at 10{sup 8} cm Hz{sup 1/2} W{sup −1} at 260 K. We ascribe the device's good thermal stability of infrared response to the three-dimensional quantum confinement of the InAs quantum dots incorporated in the active region.

Quantum interference of electrically generated single photons from a quantum dot.

PubMed

Patel, Raj B; Bennett, Anthony J; Cooper, Ken; Atkinson, Paola; Nicoll, Christine A; Ritchie, David A; Shields, Andrew J

2010-07-09

Quantum interference lies at the foundation of many protocols for scalable quantum computing and communication with linear optics. To observe these effects the light source must emit photons that are indistinguishable. From a technological standpoint, it would be beneficial to have electrical control over the emission. Here we report of an electrically driven single-photon source emitting indistinguishable photons. The device consists of a layer of InAs quantum dots embedded in the intrinsic region of a p-i-n diode. Indistinguishability of consecutive photons is tested in a two-photon interference experiment under two modes of operation, continuous and pulsed current injection. We also present a complete theory based on the interference of photons with a Lorentzian spectrum which we compare to both our continuous wave and pulsed experiments. In the former case, a visibility was measured limited only by the timing resolution of our detection system. In the case of pulsed injection, we employ a two-pulse voltage sequence which suppresses multi-photon emission and allows us to carry out temporal filtering of photons which have undergone dephasing. The characteristic Hong-Ou-Mandel 'dip' is measured, resulting in a visibility of 64 +/- 4%.

Evolution of wetting layer in InAs/GaAs quantum dot system

PubMed Central

Ye, XL; Wang, ZG

2006-01-01

For InAs/GaAs quantum dot system, the evolution of the wetting layer (WL) with the InAs deposition thickness has been studied by reflectance difference spectroscopy (RDS). Two transitions related to the heavy- and light-hole in the WL have been distinguished in RD spectra. Taking into account the strain and segregation effects, a model has been presented to deduce the InAs amount in the WL and the segregation coefficient of the indium atoms from the transition energies of heavy- and light-holes. The variation of the InAs amount in the WL and the segregation coefficient are found to rely closely on the growth modes. In addition, the huge dots also exhibits a strong effect on the evolution of the WL. The observed linear dependence of In segregation coefficient upon the InAs amount in the WL demonstrates that the segregation is enhanced by the strain in the WL.

Volmer–Weber InAs quantum dot formation on InP (113)B substrates under the surfactant effect of Sb

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Yu, E-mail: yu.zhao@insa-rennes.fr; Bertru, Nicolas; Folliot, Hervé

We report on Sb surfactant growth of InAs nanostructures on GaAs{sub 0.51}Sb{sub 0.49} layers deposited on InP (001) and on (113)B oriented substrates. On the (001) orientation, the presence of Sb significantly favors the two-dimensional growth regime. Even after the deposition of 5 mono-layers of InAs, the epitaxial film remains flat and InAs/GaAs{sub 0.51}Sb{sub 0.49} type-II quantum wells are achieved. On (113)B substrates, same growth runs resulted in formation of high density InAs islands. Microscopic studies show that wetting layer is missing on (113)B substrates, and thus, a Volmer-Weber growth mode is concluded. These different behaviors are attributed to themore » surface energy changes induced by Sb atoms on surface.« less

Self-assembled InAs quantum dot formation on GaAs ring-like nanostructure templates

PubMed Central

Strom, NW; Wang, Zh M; AbuWaar, ZY; Mazur, Yu I; Salamo, GJ

2007-01-01

The evolution of InAs quantum dot (QD) formation is studied on GaAs ring-like nanostructures fabricated by droplet homo-epitaxy. This growth mode, exclusively performed by a hybrid approach of droplet homo-epitaxy and Stransky-Krastanor (S-K) based QD self-assembly, enables one to form new QD morphologies that may find use in optoelectronic applications. Increased deposition of InAs on the GaAs ring first produced a QD in the hole followed by QDs around the GaAs ring and on the GaAs (100) surface. This behavior indicates that the QDs prefer to nucleate at locations of high monolayer (ML) step density.

InAs based terahertz quantum cascade lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brandstetter, Martin, E-mail: martin.brandstetter@tuwien.ac.at; Kainz, Martin A.; Krall, Michael

2016-01-04

We demonstrate terahertz lasing emission from a quantum cascade structure, realized with InAs/AlAs{sub 0.16}Sb{sub 0.84} heterostructures. Due to the lower effective electron mass, InAs based active regions are expected to provide a higher optical gain compared to structures consisting of GaAs or InGaAs. The growth by molecular beam epitaxy enabled the fabrication of monolayer-thick barriers, required for the active region, which is based on a 3-well resonant phonon depletion design. Devices were processed in a double-metal waveguide geometry to ensure high mode confinement and low optical losses. Lasing emission at 3.8 THz was observed at liquid helium temperatures by applyingmore » a magnetic field perpendicular to the layered structure in order to suppress parasitic scattering channels. These results demonstrate the feasibility of InAs based active regions for terahertz quantum cascade lasers, potentially enabling higher operating temperatures.« less

Extraction of inhomogeneous broadening and nonradiative losses in InAs quantum-dot lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chow, Weng W.; Liu, Alan Y.; Gossard, Arthur C.

2015-10-28

We present a method to quantify inhomogeneous broadening and nonradiative losses in quantum dot lasers by comparing the gain and spontaneous emission results of a microscopic laser theory with measurements made on 1.3 μm InAs quantum-dot lasers. Calculated spontaneous-emission spectra are first matched to those measured experimentally to determine the inhomogeneous broadening in the experimental samples. This is possible because treatment of carrier scattering at the level of quantum kinetic equations provides the homogeneously broadened spectra without use of free parameters, such as the dephasing rate. Thus we then extract the nonradiative recombination current associated with the quantum-dot active regionmore » from a comparison of measured and calculated gain versus current relations.« less

Extraction of inhomogeneous broadening and nonradiative losses in InAs quantum-dot lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chow, Weng W., E-mail: wwchow@sandia.gov; Liu, Alan Y.; Gossard, Arthur C.

2015-10-26

We present a method to quantify inhomogeneous broadening and nonradiative losses in quantum dot lasers by comparing the gain and spontaneous emission results of a microscopic laser theory with measurements made on 1.3 μm InAs quantum-dot lasers. Calculated spontaneous-emission spectra are first matched to those measured experimentally to determine the inhomogeneous broadening in the experimental samples. This is possible because treatment of carrier scattering at the level of quantum kinetic equations provides the homogeneously broadened spectra without use of free parameters, such as the dephasing rate. We then extract the nonradiative recombination current associated with the quantum-dot active region from amore » comparison of measured and calculated gain versus current relations.« less

Strain-tuning of the optical properties of semiconductor nanomaterials by integration onto piezoelectric actuators

NASA Astrophysics Data System (ADS)

Martín-Sánchez, Javier; Trotta, Rinaldo; Mariscal, Antonio; Serna, Rosalía; Piredda, Giovanni; Stroj, Sandra; Edlinger, Johannes; Schimpf, Christian; Aberl, Johannes; Lettner, Thomas; Wildmann, Johannes; Huang, Huiying; Yuan, Xueyong; Ziss, Dorian; Stangl, Julian; Rastelli, Armando

2018-01-01

The tailoring of the physical properties of semiconductor nanomaterials by strain has been gaining increasing attention over the last years for a wide range of applications such as electronics, optoelectronics and photonics. The ability to introduce deliberate strain fields with controlled magnitude and in a reversible manner is essential for fundamental studies of novel materials and may lead to the realization of advanced multi-functional devices. A prominent approach consists in the integration of active nanomaterials, in thin epitaxial films or embedded within carrier nanomembranes, onto Pb(Mg1/3Nb2/3)O3-PbTiO3-based piezoelectric actuators, which convert electrical signals into mechanical deformation (strain). In this review, we mainly focus on recent advances in strain-tunable properties of self-assembled InAs quantum dots (QDs) embedded in semiconductor nanomembranes and photonic structures. Additionally, recent works on other nanomaterials like rare-earth and metal-ion doped thin films, graphene and MoS2 or WSe2 semiconductor two-dimensional materials are also reviewed. For the sake of completeness, a comprehensive comparison between different procedures employed throughout the literature to fabricate such hybrid piezoelectric-semiconductor devices is presented. It is shown that unprocessed piezoelectric substrates (monolithic actuators) allow to obtain a certain degree of control over the nanomaterials’ emission properties such as their emission energy, fine-structure-splitting in self-assembled InAs QDs and semiconductor 2D materials, upconversion phenomena in BaTiO3 thin films or piezotronic effects in ZnS:Mn films and InAs QDs. Very recently, a novel class of micro-machined piezoelectric actuators have been demonstrated for a full control of in-plane stress fields in nanomembranes, which enables producing energy-tunable sources of polarization-entangled photons in arbitrary QDs. Future research directions and prospects are discussed.

Magnetization of InAs parabolic quantum dot: An exact diagonalization approach

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aswathy, K. M., E-mail: aswathykm20@gmail.com; Sanjeev Kumar, D.

2016-04-13

The magnetization of two electron InAs quantum dot has been studied as a function of magnetic field. The electron-electron interaction has been taken into account by using exact diagonalization method numerically. The magnetization at zero external magnetic field is zero and increases in the negative direction. There is also a paramagnetic peak where the energy levels cross from singlet state to triplet state. Finally, the magnetization falls again to even negative values and saturates.

InAs wetting layer and quantum dots on GaAs(001) surface studied by in situ STM placed inside MBE growth chamber and kMC simulations based on first-principles calculations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tsukamoto, S.; Arakawa, Y.; Bell, G. R.

2007-04-10

Dynamic images of InAs quantum dots (QDs) formation are obtained using a unique scanning tunneling microscope (STM) placed within the growth chamber. These images are interpreted with the aid of kinetic Monte Carlo (kMC) simulations of the QD nucleation process. Alloy fluctuations in the InGaAs wetting layer prior to QD formation assist in the nucleation of stable InAs islands containing tens of atoms which grow extremely rapidly to form QDs. Furthermore, not all deposited In is initially incorporated into the lattice, providing a large supply of material to rapidly form QDs at the critical thickness.

Specific features of electroluminescence in heterostructures with InSb quantum dots in an InAs matrix

DOE Office of Scientific and Technical Information (OSTI.GOV)

Parkhomenko, Ya. A.; Ivanov, E. V.; Moiseev, K. D., E-mail: mkd@iropt2.ioffe.rssi.ru

2013-11-15

The electrical and electroluminescence properties of a single narrow-gap heterostructure based on a p-n junction in indium arsenide, containing a single layer of InSb quantum dots in the InAs matrix, are studied. The presence of quantum dots has a significant effect on the shape of the reverse branch of the current-voltage characteristic of the heterostructure. Under reverse bias, the room-temperature electroluminescence spectra of the heterostructure with quantum dots, in addition to a negative-luminescence band with a maximum at the wavelength {lambda} = 3.5 {mu}m, contained a positive-luminescence emission band at 3.8 {mu}m, caused by radiative transitions involving localized states ofmore » quantum dots at the type-II InSb/InAs heterointerface.« less

Ballistic magnetotransport and spin-orbit interaction in indium antimonide and indium arsenide quantum wells

NASA Astrophysics Data System (ADS)

Peters, John Archibald

While charge transport in a two-dimensional electron system (2DES) is fairly well understood, many open experimental and theoretical questions related to the spin of electrons remain. The standard 2DES embedded in Alx Ga1-xAs/GaAs heterostructures is most likely not the optimal candidate for such investigations, since spin effects as well as spin-orbit interactions are small perturbations compared to other effects. This has brought InSb- and InAs-based material systems into focus due to the possibility of large spin-orbit interactions. By utilizing elastic scattering off a lithographic barrier, we investigate the consequence of spin on different electron trajectories observed in InSb and InAs quantum wells. We focus on the physical properties of spin-dependent reflection in a 2DES and we present experimental results demonstrating a method to create spin-polarized beams of ballistic electrons in the presence of a lateral potential barrier. Spatial separation of electron spins using cyclotron motion in a weak magnetic is also achieved via transverse magnetic focusing. We also explore electrostatic gating effects in InSb/InAlSb heterostructures and demonstrate the effective use of polymethylglutarimide (PMGI) as a gate dielectric for InSb. The dependence on temperature and on front gate voltage of mobility and density are also examined, revealing a strong dependence of mobility on density. As regards front gate action, there is saturation in the density once it reaches a limiting value. Further, we investigate antidot lattices patterned on InSb/InAlSb and InAs/AlGaSb heterostructures. At higher magnetic fields, ballistic commensurability features are displayed while at smaller magnetic fields localization and quantized oscillatory phenomena appear, with marked differences between InSb and InAs. Interesting localization behavior is exhibited in InSb, with the strength of the localization peak decreasing exponentially with temperature between 0.4 K and 50 K. InAs on the other hand show a strikingly modified antilocalization behavior, with small-period oscillations in magnetic field superposed. We also observe Altshuler-Aronov-Spivak oscillations in InSb and InAs antidot lattices and extract the phase and spin coherence lengths in InAs. Our experimental results are discussed in the light of localization and anti localization as probes of disorder and of spin dephasing mechanisms, modified by the artificial potential of the antidot lattice.

Self-assembled indium arsenide quantum dots: Structure, formation dynamics, optical properties

NASA Astrophysics Data System (ADS)

Lee, Hao

1998-12-01

In this dissertation, we investigate the properties of InAs/GaAs quantum dots grown by molecular beam epitaxy. The structure and formation dynamics of InAs quantum dots are studied by a variety of structural characterization techniques. Correlations among the growth conditions, the structural characteristics, and the observed optical properties are explored. The most fundamental structural characteristic of the InAs quantum dots is their shape. Through detailed study of the reflection high energy electron diffraction patterns, we determined that self-assembled InAs islands possess a pyramidal shape with 136 bounding facets. Cross-sectional transmission electron microscopy images and atomic force microscopy images strongly support this model. The 136 model we proposed is the first model that is consistent with all reported shape features determined using different methods. The dynamics of coherent island formation is also studied with the goal of establishing the factors most important in determining the size, density, and the shape of self- organized InAs quantum dots. Our studies clearly demonstrate the roles that indium diffusion and desorption play in InAs island formation. An unexpected finding (from atomic force microscopy images) was that the island size distribution bifurcated during post- growth annealing. Photoluminescence spectra of the samples subjected to in-situ annealing prior to the growth of a capping layer show a distinctive double-peak feature. The power-dependence and temperature-dependence of the photoluminescence spectra reveals that the double- peak emission is associated with the ground-state transition of islands in two different size branches. These results confirm the island size bifurcation observed from atomic force microscopy images. The island size bifurcation provides a new approach to the control and manipulation of the island size distribution. Unexpected dependence of the photoluminescence line-shape on sample temperature and pump intensity was observed for samples grown at relatively high substrate temperatures. The behavior is modeled and explained in terms of competition between two overlapping transitions. The study underscores that the growth conditions can have a dramatic impact on the optical properties of the quantum dots. This dissertation includes both my previously published and unpublished authored materials.

Negative differential conductance in InAs wire based double quantum dot induced by a charged AFM tip

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhukov, A. A., E-mail: azhukov@issp.ac.ru; Volk, Ch.; Winden, A.

We investigate the conductance of an InAs nanowire in the nonlinear regime in the case of low electron density where the wire is split into quantum dots connected in series. The negative differential conductance in the wire is initiated by means of a charged atomic force microscope tip adjusting the transparency of the tunneling barrier between two adjoining quantum dots. We confirm that the negative differential conductance arises due to the resonant tunneling between these two adjoining quantum dots. The influence of the transparency of the blocking barriers and the relative position of energy states in the adjoining dots onmore » a decrease of the negative differential conductance is investigated in detail.« less

Photon upconversion using InAs-based quantum structures and the control of intermediate states (Conference Presentation)

NASA Astrophysics Data System (ADS)

Kamiya, Itaru; Tex, David M.; Zhang, Yuwei; Kanemitsu, Yoshihiko

2017-04-01

We have reported that a novel quantum structure which we term quantum well island (QWI), a few monolayer thick and sub-micron wide structure, is effective in confining the carriers and enhancing multi-exciton interactions. By embedding InAs-based QWIs in AlGaAs barrier layers, we demonstrated that upconverted photoluminescence (PL) in the visible regime can be obtained by impinging near infrared (IR) photons, which may potentially be applied for intermediate band (IB) solar cells [1]. Further investigation has revealed that the dominant upconversion mechanism is most likely Auger, while two-step excitation may also take place under selected conditions [2]. The upconverted carriers generated by IR irradiation may also be detected as photocurrents. Through a series of studies using this structure, we note the importance of the carrier trapping involved during the upconversion processes. For instance, multiple laser-beam excitation measurements have shown that trapping and re-trapping processes reduce the photocurrents [3]. However, recently, using a structure that consists of InAs quantum dots embedded in InAs/GaAs multi-quantum wells (MQWs), we find that efficient carrier trapping can enhance upconverted PL [4]. We show the preparation and the control of this structure by molecular beam epitaxy (MBE), and the possible mechanisms of the upconversion. We also discuss how the conversion efficiency may be improved using device structures based on this concept. [1] D. M. Tex and I. Kamiya, Phys. Rev. B 83 (2011) 081309. [2] D. M. Tex, I. Kamiya, and Y. Kanemitsu, Sci. Rep. 4 (2014) 4125. [3] D. M. Tex, T. Ihara, I. Kamiya, and Y. Kanemitsu, to be published. [4] Y. Zhang and I. Kamiya, JSAP Spring Meeting, 2016.

Dynamical thermal effects in InGaAsP microtubes at telecom wavelengths.

PubMed

Tian, Zhaobing; Bianucci, Pablo; Roche, Philip J R; Dastjerdi, M Hadi Tavakoli; Mi, Zetian; Poole, Philip J; Kirk, Andrew G; Plant, David V

2012-07-01

We report on the observation of a dynamical thermal effect in InGaAsP microtubes at telecom wavelengths. The microtubes are fabricated by releasing a strained semiconductor bilayer and are picked up by abruptly tapered optical fibers for subsequent coupling with adiabatically tapered optical fibers. As a result of absorption by InAs quantum dots embedded in the tube structure, these microtubes show dynamical thermal effects at wavelengths around 1525 nm and 1578 nm, while they are passive at longer wavelengths near 1634 nm. The photon absorption induced thermal effect is visualized by generating a pair of microbottles. The dynamical thermal effect can be avoided or exploited for passive or active applications by utilizing appropriate resonance wavelengths.

In-situ laser nano-patterning for ordered InAs/GaAs(001) quantum dot growth

NASA Astrophysics Data System (ADS)

Zhang, Wei; Shi, Zhenwu; Huo, Dayun; Guo, Xiaoxiang; Zhang, Feng; Chen, Linsen; Wang, Qinhua; Zhang, Baoshun; Peng, Changsi

2018-04-01

A study of in-situ laser interference nano-patterning on InGaAs wetting layers was carried out during InAs/GaAs (001) quantum dot molecular beam epitaxy growth. Periodic nano-islands with heights of a few atomic layers were obtained via four-beam laser interference irradiation on the InGaAs wetting layer at an InAs coverage of 0.9 monolayer. The quantum dots nucleated preferentially at edges of nano-islands upon subsequent deposition of InAs on the patterned surface. When the nano-islands are sufficiently small, the patterned substrate could be spontaneously re-flattened and an ordered quantum dot array could be produced on the smooth surface. This letter discusses the mechanisms of nano-patterning and ordered quantum dot nucleation in detail. This study provides a potential technique leading to site-controlled, high-quality quantum dot fabrication.

Tuning of in-plane optical anisotropy by inserting ultra-thin InAs layer at interfaces in (001)-grown GaAs/AlGaAs quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yu, J. L., E-mail: jlyu@semi.ac.cn; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083; Key Laboratory of Optoelectronic Materials Chemistry and Physics, Chinese Academy of Sciences, Fuzhou 350002

2015-01-07

The in-plane optical anisotropy (IPOA) in (001)-grown GaAs/AlGaAs quantum wells (QWs) with different well widths varying from 2 nm to 8 nm has been studied by reflectance difference spectroscopy. Ultra-thin InAs layers with thickness ranging from 0.5 monolayer (ML) to 1.5 ML have been inserted at GaAs/AlGaAs interfaces to tune the asymmetry in the QWs. It is demonstrated that the IPOA can be accurately tailored by the thickness of the inserted ultra-thin InAs layer at the interfaces. Strain-induced IPOA has also been extracted by using a stress apparatus. We find that the intensity of the strain-induced IPOA decreases with the thickness ofmore » the inserted InAs layer, while that of the interface-induced IPOA increases with the thickness of the InAs layer. Theoretical calculations based on 6 band k ⋅ p theory have been carried out, and good agreements with experimental results are obtained. Our results demonstrate that, the IPOA of the QWs can be greatly and effectively tuned by inserting an ultra-thin InAs layer with different thicknesses at the interfaces of QWs, which does not significantly influence the transition energies and the transition probability of QWs.« less

Excitonic lasing of strain-free InP(As) quantum dots in AlInAs microdisk

NASA Astrophysics Data System (ADS)

Lebedev, D. V.; Kulagina, M. M.; Troshkov, S. I.; Vlasov, A. S.; Davydov, V. Y.; Smirnov, A. N.; Bogdanov, A. A.; Merz, J. L.; Kapaldo, J.; Gocalinska, A.; Juska, G.; Moroni, S. T.; Pelucchi, E.; Barettin, D.; Rouvimov, S.; Mintairov, A. M.

2017-03-01

Formation, emission, and lasing properties of strain-free InP(As)/AlInAs quantum dots (QDs) embedded in AlInAs microdisk (MD) cavity were investigated using transmission electron microscopy and photoluminescence (PL) techniques. In MD structures, the QDs have the nano-pan-cake shape with the height of ˜2 nm, the lateral size of 20-50 nm, and the density of ˜5 × 109 cm-2. Their emission observed at ˜940 nm revealed strong temperature quenching, which points to exciton decomposition. It also showed unexpected type-I character, indicating In-As intermixing as confirmed by band structure calculations. We observed lasing of InP(As) QD excitons into whispering gallery modes in MD having the diameter of ˜3.2 μm and providing a free spectral range of ˜27 nm and quality factors up to Q˜13 000. Threshold of ˜50 W/cm2 and spontaneous emission coupling coefficient of ˜0.2 were measured for this MD-QD system.

Many-body exciton states in self-assembled quantum dots coupled to a Fermi sea

NASA Astrophysics Data System (ADS)

Koenraad, P. M.; Kleemans, N. A. J. M.; van Bree, J.; Govorov, A. O.; Hamhuis, G. J.; Notzel, R.; Silov, A. Yu.

2010-03-01

Using voltage dependent photoluminescence spectroscopy we have studied the coupling between QD states and the continuum of states of a Fermi sea of electrons in the close proximity of a self-assembled InAs quantum dot embedded in GaAs. This coupling gives rise to new optical transitions, manifesting the formation of many-body exciton states. The lines in the photoluminescence spectra can be well explained within the Anderson and Mahan exciton models. The presence of Mahan excitons originates from the Coulomb interaction between electrons in the Fermi sea and the hole(s) in the QD whereas a the second type of many-body exciton is due to a hybridized exciton originating from the tunnel interaction between the continuum of states in the Fermi sea and the localized state in the QD. Our study demonstrates the possibility to investigate a variety of many-body states in QDs coupled to a Fermi sea and opens the way to investigate optically the Kondo effect and related spin phenomena in these systems.

Sb surfactant mediated growth of InAs/AlAs{sub 0.56}Sb{sub 0.44} strained quantum well for intersubband absorption at 1.55 μm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, Yu; Bertru, Nicolas; Folliot, Hervé

Surfactant mediated growth of strained InAs/AlAs{sub 0.56}Sb{sub 0.44} quantum wells on InP (001) substrate is investigated. X ray diffraction and transmission electron microscopy analysis reveal that the supply of antimony on InAs surface delays the 2D to 3D growth transition and allows the growth of thick InAs/AlAsSb quantum wells. Quantum well as thick as 7 ML, without defect was achieved by Sb surfactant mediated growth. Further high resolution transmission electron microscopy measurement and geometric phase analysis show that InAs/AlAsSb interfaces are not abrupt. At InAs on AlAsSb interface, the formation of a layer presenting lattice parameter lower than InP leadsmore » to a tensile stress. From energetic consideration, the formation of As rich AlAsSb layer at interface is deduced. At AlAsSb on InAs interface, a compressive layer is formed. The impact on optical properties and the chemical composition of this layer are discussed from microscopic analysis and photoluminescence experiments.« less

Electronic Structures of Strained InAs x P1-x by Density Functional Theory.

PubMed

Lee, Seung Mi; Kim, Min-Young; Kim, Young Heon

2018-09-01

We investigated the effects of strain on the electronic structures of InAsxP1-x using quantum mechanical density functional theory calculations. The electronic band gap and electron effective mass decreased with the increase of the uniaxial tensile strain along the [0001] direction of wurtzite InAs0.75P0.25. Therefore, faster electron movements are expected. These theoretical results are in good agreement with the experimental measurements of InAs0.75P0.25 nanowire.

Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers

NASA Astrophysics Data System (ADS)

Su, Xiang-Bin; Ding, Ying; Ma, Ben; Zhang, Ke-Lu; Chen, Ze-Sheng; Li, Jing-Lun; Cui, Xiao-Ran; Xu, Ying-Qiang; Ni, Hai-Qiao; Niu, Zhi-Chuan

2018-02-01

The device characteristics of semiconductor quantum dot lasers have been improved with progress in active layer structures. Self-assembly formed InAs quantum dots grown on GaAs had been intensively promoted in order to achieve quantum dot lasers with superior device performances. In the process of growing high-density InAs/GaAs quantum dots, bimodal size occurs due to large mismatch and other factors. The bimodal size in the InAs/GaAs quantum dot system is eliminated by the method of high-temperature annealing and optimized the in situ annealing temperature. The annealing temperature is taken as the key optimization parameters, and the optimal annealing temperature of 680 °C was obtained. In this process, quantum dot growth temperature, InAs deposition, and arsenic (As) pressure are optimized to improve quantum dot quality and emission wavelength. A 1.3-μm high-performance F-P quantum dot laser with a threshold current density of 110 A/cm2 was demonstrated.

Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers.

PubMed

Su, Xiang-Bin; Ding, Ying; Ma, Ben; Zhang, Ke-Lu; Chen, Ze-Sheng; Li, Jing-Lun; Cui, Xiao-Ran; Xu, Ying-Qiang; Ni, Hai-Qiao; Niu, Zhi-Chuan

2018-02-21

The device characteristics of semiconductor quantum dot lasers have been improved with progress in active layer structures. Self-assembly formed InAs quantum dots grown on GaAs had been intensively promoted in order to achieve quantum dot lasers with superior device performances. In the process of growing high-density InAs/GaAs quantum dots, bimodal size occurs due to large mismatch and other factors. The bimodal size in the InAs/GaAs quantum dot system is eliminated by the method of high-temperature annealing and optimized the in situ annealing temperature. The annealing temperature is taken as the key optimization parameters, and the optimal annealing temperature of 680 °C was obtained. In this process, quantum dot growth temperature, InAs deposition, and arsenic (As) pressure are optimized to improve quantum dot quality and emission wavelength. A 1.3-μm high-performance F-P quantum dot laser with a threshold current density of 110 A/cm 2 was demonstrated.

Directing Nuclear Spin Flips in InAs Quantum Dots Using Detuned Optical Pulse Trains

DTIC Science & Technology

2009-04-24

Directing Nuclear Spin Flips in InAs Quantum Dots Using Detuned Optical Pulse Trains S . G. Carter,1 A. Shabaev,2 Sophia E. Economou,1 T. A. Kennedy,1...A. S . Bracker,1 and T. L. Reinecke1 1Naval Research Laboratory, Washington, D.C. 20375-5322, USA 2School of Computational Sciences, George Mason...trion spin states and the allowed transitions. Single (double) arrows are electron (hole) spins. PRL 102, 167403 (2009) P HY S I CA L R EV I EW LE T T ER

Controlled tuning of the radiative lifetime in InAs self-assembled quantum dots through vertical ordering

NASA Astrophysics Data System (ADS)

Colocci, M.; Vinattieri, A.; Lippi, L.; Bogani, F.; Rosa-Clot, M.; Taddei, S.; Bosacchi, A.; Franchi, S.; Frigeri, P.

1999-01-01

Multilayer structures of InAs quantum dots have been studied by means of photoluminescence techniques. A strong increase of the radiative lifetime with increasing number of stacked dot layers has been observed at low temperatures. Moreover, a strong temperature dependence of the radiative lifetime, which is not present in the single layer samples, has been found in the multistacked structures. The observed effects are nicely explained as a consequence of the electronic coupling between electrons and holes induced by vertical ordering.

Molecular engineering with artificial atoms: designing a material platform for scalable quantum spintronics and photonics

NASA Astrophysics Data System (ADS)

Doty, Matthew F.; Ma, Xiangyu; Zide, Joshua M. O.; Bryant, Garnett W.

2017-09-01

Self-assembled InAs Quantum Dots (QDs) are often called "artificial atoms" and have long been of interest as components of quantum photonic and spintronic devices. Although there has been substantial progress in demonstrating optical control of both single spins confined to a single QD and entanglement between two separated QDs, the path toward scalable quantum photonic devices based on spins remains challenging. Quantum Dot Molecules, which consist of two closely-spaced InAs QDs, have unique properties that can be engineered with the solid state analog of molecular engineering in which the composition, size, and location of both the QDs and the intervening barrier are controlled during growth. Moreover, applied electric, magnetic, and optical fields can be used to modulate, in situ, both the spin and optical properties of the molecular states. We describe how the unique photonic properties of engineered Quantum Dot Molecules can be leveraged to overcome long-standing challenges to the creation of scalable quantum devices that manipulate single spins via photonics.

Quantum dot quantum cascade infrared photodetector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Xue-Jiao; Zhai, Shen-Qiang; Zhuo, Ning

2014-04-28

We demonstrate an InAs quantum dot quantum cascade infrared photodetector operating at room temperature with a peak detection wavelength of 4.3 μm. The detector shows sensitive photoresponse for normal-incidence light, which is attributed to an intraband transition of the quantum dots and the following transfer of excited electrons on a cascade of quantum levels. The InAs quantum dots for the infrared absorption were formed by making use of self-assembled quantum dots in the Stranski–Krastanov growth mode and two-step strain-compensation design based on InAs/GaAs/InGaAs/InAlAs heterostructure, while the following extraction quantum stairs formed by LO-phonon energy are based on a strain-compensated InGaAs/InAlAs chirpedmore » superlattice. Johnson noise limited detectivities of 3.64 × 10{sup 11} and 4.83 × 10{sup 6} Jones at zero bias were obtained at 80 K and room temperature, respectively. Due to the low dark current and distinct photoresponse up to room temperature, this device can form high temperature imaging.« less

Quantum Dots obtained by LPE from under-saturated In-As liquid phases on GaAs substrates

NASA Astrophysics Data System (ADS)

Ortiz, F. E.; Mishurnyi, V.; Gorbatchev, A.; De Anda, F.; Prutskij, T.

2011-01-01

In this work we inform about quantum dots (QD) obtained by Liquid Phase Epitaxy (LPE) on GaAs substrates from under-saturated In-As liquid phases. In our processes, we have prepared saturated In-rich liquid phases by dissolving an InAs wafer at one of the temperatures interval from 450 to 414 C for 60 minutes. The contact between In-As liquid phase and the GaAs substrate was always done at a constant temperature of 444 C for 5 seconds. Thus, the growth temperature for most of the samples was higher than the liquidus temperature. We think that the growth driving force is related to a transient process that occurs when the system is trying to reach equilibrium. Under the atom force microscope (AFM) we have observed nano-islands on the surfaces of the samples obtained from under-saturated liquid phases prepared at 438, 432 and 426 C. The 25 K photoluminescence spectrum shows a peak at a 1.33 eV, in addition to the GaAs related line.

Spin interactions in InAs quantum dots

NASA Astrophysics Data System (ADS)

Doty, M. F.; Ware, M. E.; Stinaff, E. A.; Scheibner, M.; Bracker, A. S.; Gammon, D.; Ponomarev, I. V.; Reinecke, T. L.; Korenev, V. L.

2006-03-01

Fine structure splittings in optical spectra of self-assembled InAs quantum dots (QDs) generally arise from spin interactions between particles confined in the dots. We present experimental studies of the fine structure that arises from multiple charges confined in a single dot [1] or in molecular orbitals of coupled pairs of dots. To probe the underlying spin interactions we inject particles with a known spin orientation (by using polarized light to perform photoluminescence excitation spectroscopy experiments) or use a magnetic field to orient and/or mix the spin states. We develop a model of the spin interactions that aids in the development of quantum information processing applications based on controllable interactions between spins confined to QDs. [1] Polarized Fine Structure in the Photoluminescence Excitation Spectrum of a Negatively Charged Quantum Dot, Phys. Rev. Lett. 95, 177403 (2005)

Mobility in excess of 106 cm2/V s in InAs quantum wells grown on lattice mismatched InP substrates

NASA Astrophysics Data System (ADS)

Hatke, A. T.; Wang, T.; Thomas, C.; Gardner, G. C.; Manfra, M. J.

2017-10-01

We investigate the transport properties of a two-dimensional electron gas residing in strained composite quantum wells of In0.75Ga0.25As/InAs/In0.75Ga0.25As cladded with In0.75Al0.25As barriers grown metamorphically on insulating InP substrates. By optimizing the widths of the In0.75Ga0.25As layers, the In0.75Al0.25As barrier, and the InAs quantum well, we demonstrate mobility in excess of 1 ×106 cm2/V s. Mobility vs. density data indicate that scattering is dominated by a residual three dimensional distribution of charged impurities. We extract the effective Rashba parameter and spin-orbit length for these composite quantum wells.

Growth and characterization of (110) InAs quantum well metamorphic heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Podpirka, Adrian A., E-mail: adrian.podpirka.ctr@nrl.navy.mil; Katz, Michael B.; Twigg, Mark E.

An understanding of the growth of (110) quantum wells (QWs) is of great importance to spin systems due to the observed long spin relaxation times. In this article, we report on the metamorphic growth and characterization of high mobility undoped InAs (110) QWs on GaAs (110) substrates. A low-temperature nucleation layer reduces dislocation density, results in tilting of the subsequent buffer layer and increases the electron mobility of the QW structure. The mobility varies widely and systematically (4000–16 000 cm{sup 2}/Vs at room temperature) with deposition temperature and layer thicknesses. Low-temperature transport measurements exhibit Shubnikov de-Haas oscillations and quantized plateaus in themore » quantum Hall regime.« less

Mid-infrared electroluminescence from InAs type-I quantum wells grown on InAsP/InP metamorphic buffers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jung, Daehwan, E-mail: daehwan.jung@yale.edu; Larry Lee, Minjoo; Yu, Lan

We report room-temperature (RT) electroluminescence (EL) from InAs/InAs{sub x}P{sub 1−x} quantum well (QW) light-emitting diodes (LEDs) over a wide wavelength range of 2.50–2.94 μm. We demonstrate the ability to accurately design strained InAs QW emission wavelengths while maintaining low threading dislocation density, coherent QW interfaces, and high EL intensity. Investigation of the optical properties of the LEDs grown on different InAs{sub x}P{sub 1−x} metamorphic buffers showed higher EL intensity and lower thermal quenching for QWs with higher barriers and stronger carrier confinement. Strong RT EL intensity from LEDs with narrow full-width at half-maximum shows future potential for InAs QW mid-infrared lasermore » diodes on InAsP/InP.« less

Impact of threading dislocation density on the lifetime of InAs quantum dot lasers on Si

NASA Astrophysics Data System (ADS)

Jung, Daehwan; Herrick, Robert; Norman, Justin; Turnlund, Katherine; Jan, Catherine; Feng, Kaiyin; Gossard, Arthur C.; Bowers, John E.

2018-04-01

We investigate the impact of threading dislocation density on the reliability of 1.3 μm InAs quantum dot lasers epitaxially grown on Si. A reduction in the threading dislocation density from 2.8 × 108 cm-2 to 7.3 × 106 cm-2 has improved the laser lifetime by about five orders of magnitude when aged continuous-wave near room temperature (35 °C). We have achieved extrapolated lifetimes (time to double initial threshold) more than 10 × 106 h. An accelerated laser aging test at an elevated temperature (60 °C) reveals that p-modulation doped quantum dot lasers on Si retain superior reliability over unintentionally doped ones. These results suggest that epitaxially grown quantum dot lasers could be a viable approach to realize a reliable, scalable, and efficient light source on Si.

Ballistic One-Dimensional InAs Nanowire Cross-Junction Interconnects.

PubMed

Gooth, Johannes; Borg, Mattias; Schmid, Heinz; Schaller, Vanessa; Wirths, Stephan; Moselund, Kirsten; Luisier, Mathieu; Karg, Siegfried; Riel, Heike

2017-04-12

Coherent interconnection of quantum bits remains an ongoing challenge in quantum information technology. Envisioned hardware to achieve this goal is based on semiconductor nanowire (NW) circuits, comprising individual NW devices that are linked through ballistic interconnects. However, maintaining the sensitive ballistic conduction and confinement conditions across NW intersections is a nontrivial problem. Here, we go beyond the characterization of a single NW device and demonstrate ballistic one-dimensional (1D) quantum transport in InAs NW cross-junctions, monolithically integrated on Si. Characteristic 1D conductance plateaus are resolved in field-effect measurements across up to four NW-junctions in series. The 1D ballistic transport and sub-band splitting is preserved for both crossing-directions. We show that the 1D modes of a single injection terminal can be distributed into multiple NW branches. We believe that NW cross-junctions are well-suited as cross-directional communication links for the reliable transfer of quantum information as required for quantum computational systems.

Experimental Determination of Quantum and Centroid Capacitance in Arsenide-Antimonide Quantum-Well MOSFETs Incorporating Nonparabolicity Effect

DTIC Science & Technology

2011-05-01

SdH) magnetotrans- port measurements at a low temperature (2–15 K ) and a high magnetic field (0–9 T). We also present an EOT scalability study that...Fig. 2. Measured and modeled (a) split Cg–Vg and (b) G−Vg characteristics of an InAs0.8Sb0.2 QW-MOSFET at 77 K . dielectric (0.7 nm EOT) and barrier...measured and modeled split Cg–Vg and G−Vg characteristics of InAs0.8Sb0.2 QW-MOSFET at 77 K and the frequency dispersion characteristics due to the in

Surface Passivation of InAs(001) With Thioacetamide

DTIC Science & Technology

2005-01-01

Fitting and quantitative analysis of the In 3d data are described in detail elsewhere.9 Oxidation of As requires breaching the top two layers of the S...ACS or HPLC grade used with- out additional purificationd. The average S coverage after these exposures was reduced by ᝿% compared to as- passivated...embedding one-half of an InAs sample in freshly cast polydimethylsiloxane sPDMSd followed by hardening the PDMS overnight at room tem- perature. After 30

Diameter-tailored telecom-band luminescence in InP/InAs heterostructure nanowires grown on InP (111)B substrate with continuously-modulated diameter from microscale to nanoscale

NASA Astrophysics Data System (ADS)

Zhang, Guoqiang; Tateno, Kouta; Sogawa, Tetsuomi; Gotoh, Hideki

2018-04-01

We report diameter-tailored luminescence in telecom band of InP/InAs multi-heterostructure nanowires with continuously-modulated diameter from microscale to nanoscale. By using the self-catalyzed vapor-solid-liquid approach, we tune the indium particle size, and consequently the InP/InAs nanowire diameter, during growth by modulating the flow rate of the indium source material. This technique allows a high degree of continuous tuning in a wide scale from microscale to nanoscale. Hence it offers an original way to bridge the gap between microscale-featured photolithographic and nanoscale-featured nanolithographic processes and to incorporate InAs quantum disks with tunable diameters into a single InP/InAs quantum heterostructure nanowire. We realized site-defined nanowires with nanoscale diameters initiated from site-defined microscale-diameter particles made with a conventional photolithographic process. The luminescence wavelength from InAs quantum disks is directly connected to the nanowire diameter, by which the strain in the InAs quantum disks is tailored. This work provides new opportunities in the fabrication and design of nanowire devices that extends beyond what is achievable with the current technologies and enables the nanowire shape to be engineered thus offering the potential to broaden the application range of nanowire devices.

Diameter-tailored telecom-band luminescence in InP/InAs heterostructure nanowires grown on InP (111)B substrate with continuously-modulated diameter from microscale to nanoscale.

PubMed

Zhang, Guoqiang; Tateno, Kouta; Sogawa, Tetsuomi; Gotoh, Hideki

2018-04-02

We report diameter-tailored luminescence in telecom band of InP/InAs multi-heterostructure nanowires with continuously-modulated diameter from microscale to nanoscale. By using the self-catalyzed vapor-solid-liquid approach, we tune the indium particle size, and consequently the InP/InAs nanowire diameter, during growth by modulating the flow rate of the indium source material. This technique allows a high degree of continuous tuning in a wide scale from microscale to nanoscale. Hence it offers an original way to bridge the gap between microscale-featured photolithographic and nanoscale-featured nanolithographic processes and to incorporate InAs quantum disks with tunable diameters into a single InP/InAs quantum heterostructure nanowire. We realized site-defined nanowires with nanoscale diameters initiated from site-defined microscale-diameter particles made with a conventional photolithographic process. The luminescence wavelength from InAs quantum disks is directly connected to the nanowire diameter, by which the strain in the InAs quantum disks is tailored. This work provides new opportunities in the fabrication and design of nanowire devices that extends beyond what is achievable with the current technologies and enables the nanowire shape to be engineered thus offering the potential to broaden the application range of nanowire devices.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Jiyin; Huang, Shaoyun, E-mail: hqxu@pku.edu.cn, E-mail: syhuang@pku.edu.cn; Lei, Zijin

We demonstrate direct measurements of the spin-orbit interaction and Landé g factors in a semiconductor nanowire double quantum dot. The device is made from a single-crystal pure-phase InAs nanowire on top of an array of finger gates on a Si/SiO{sub 2} substrate and the measurements are performed in the Pauli spin-blockade regime. It is found that the double quantum dot exhibits a large singlet-triplet energy splitting of Δ{sub ST} ∼ 2.3 meV, a strong spin-orbit interaction of Δ{sub SO} ∼ 140 μeV, and a large and strongly level-dependent Landé g factor of ∼12.5. These results imply that single-crystal pure-phase InAs nanowires are desired semiconductormore » nanostructures for applications in quantum information technologies.« less

Highly Efficient Deep Blue Organic Light-Emitting Diodes Based on Imidazole: Significantly Enhanced Performance by Effective Energy Transfer with Negligible Efficiency Roll-off.

PubMed

Shan, Tong; Liu, Yulong; Tang, Xiangyang; Bai, Qing; Gao, Yu; Gao, Zhao; Li, Jinyu; Deng, Jian; Yang, Bing; Lu, Ping; Ma, Yuguang

2016-10-26

Great efforts have been devoted to develop efficient deep blue organic light-emitting diodes (OLEDs) materials meeting the standards of European Broadcasting Union (EBU) standard with Commission International de L'Eclairage (CIE) coordinates of (0.15, 0.06) for flat-panel displays and solid-state lightings. However, high-performance deep blue OLEDs are still rare for applications. Herein, two efficient deep blue emitters, PIMNA and PyINA, are designed and synthesized by coupling naphthalene with phenanthreneimidazole and pyreneimidazole, respectively. The balanced ambipolar transporting natures of them are demonstrated by single-carrier devices. Their nondoped OLEDs show deep blue emissions with extremely small CIE y of 0.034 for PIMNA and 0.084 for PyINA, with negligible efficiency roll-off. To take advantage of high photoluminescence quantum efficiency of PIMNA and large fraction of singlet exciton formation of PyINA, doped devices are fabricated by dispersing PyINA into PIMNA. A significantly improved maximum external quantum efficiency (EQE) of 5.05% is obtained through very effective energy transfer with CIE coordinates of (0.156, 0.060), and the EQE remains 4.67% at 1000 cd m -2 , which is among the best of deep blue OLEDs reported matching stringent EBU standard well.

Precision tuning of InAs quantum dot emission wavelength by iterative laser annealing

NASA Astrophysics Data System (ADS)

Dubowski, Jan J.; Stanowski, Radoslaw; Dalacu, Dan; Poole, Philip J.

2018-07-01

Controlling the emission wavelength of quantum dots (QDs) over large surface area wafers is challenging to achieve directly through epitaxial growth methods. We have investigated an innovative post growth laser-based tuning procedure of the emission of self-assembled InAs QDs grown epitaxially on InP (001). A targeted blue shift of the emission is achieved with a series of iterative steps, with photoluminescence diagnostics employed between the steps to monitor the result of intermixing. We demonstrate tuning of the emission wavelength of ensembles of QDs to within approximately ±1 nm, while potentially better precision should be achievable for tuning the emission of individual QDs.

Improved optical properties of InAs quantum dots for intermediate band solar cells by suppression of misfit strain relaxation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xie, H.; School for Engineering of Matter, Transport, and Energy, Arizona State University, Tempe, Arizona 85287-6106; Prioli, R.

The properties of InAs quantum dots (QDs) have been studied for application in intermediate band solar cells. It is found that suppression of plastic relaxation in the QDs has a significant effect on the optoelectronic properties. Partial capping plus annealing is shown to be effective in controlling the height of the QDs and in suppressing plastic relaxation. A force balancing model is used to explain the relationship between plastic relaxation and QD height. A strong luminescence has been observed from strained QDs, indicating the presence of localized states in the desired energy range. No luminescence has been observed from plasticallymore » relaxed QDs.« less

Size quantization patterns in self-assembled InAs/GaAs quantum dots

NASA Astrophysics Data System (ADS)

Colocci, M.; Bogani, F.; Carraresi, L.; Mattolini, R.; Bosacchi, A.; Franchi, S.; Frigeri, P.; Taddei, S.; Rosa-Clot, M.

1997-07-01

Molecular beam epitaxy has been used for growing self-assembled InAs quantum dots. A continuous variation of the InAs average coverage across the sample has been obtained by properly aligning the (001) GaAs substrate with respect to the molecular beam. Excitation of a large number of dots (laser spot diameter ≈ 100 μm) results in structured photoluminescence spectra; a clear quantization of the dot sizes is deduced from the distinct luminescence bands separated in energy by an average spacing of 20-30 meV. We ascribe the individual bands of the photoluminescence spectrum after low excitation to families of dots with roughly the same diameter and heights differing by one monolayer.

Field tuning the g factor in InAs nanowire double quantum dots.

PubMed

Schroer, M D; Petersson, K D; Jung, M; Petta, J R

2011-10-21

We study the effects of magnetic and electric fields on the g factors of spins confined in a two-electron InAs nanowire double quantum dot. Spin sensitive measurements are performed by monitoring the leakage current in the Pauli blockade regime. Rotations of single spins are driven using electric-dipole spin resonance. The g factors are extracted from the spin resonance condition as a function of the magnetic field direction, allowing determination of the full g tensor. Electric and magnetic field tuning can be used to maximize the g-factor difference and in some cases altogether quench the electric-dipole spin resonance response, allowing selective single spin control. © 2011 American Physical Society

High Quantum Efficiency Nanopillar Photodiodes Overcoming the Diffraction Limit of Light.

PubMed

Lee, Wook-Jae; Senanayake, Pradeep; Farrell, Alan C; Lin, Andrew; Hung, Chung-Hong; Huffaker, Diana L

2016-01-13

InAs1-xSbx nanowires have recently attracted interest for infrared sensing applications due to the small bandgap and high thermal conductivity. However, previous reports on nanowire-based infrared sensors required low operating temperatures in order to mitigate the high dark current and have shown poor sensitivities resulting from reduced light coupling efficiency beyond the diffraction limit. Here, InAsSb nanopillar photodiodes with high quantum efficiency are achieved by partially coating the nanopillar with metal that excites localized surface plasmon resonances, leading to quantum efficiencies of ∼29% at 2390 nm. These high quantum efficiency nanopillar photodiodes, with 180 nm diameters and 1000 nm heights, allow operation at temperatures as high as 220 K and exhibit a detection wavelength up to 3000 nm, well beyond the diffraction limit. The InAsSb nanopillars are grown on low cost GaAs (111)B substrates using an InAs buffer layer, making our device architecture a promising path toward low-cost infrared focal plane arrays with high operating temperature.

A Theoretical Study of Self Assembled InAs/GaAs and InAs/GaP/GaAs Quantum Dots: Effects of Strain Balancing

NASA Astrophysics Data System (ADS)

Lin, Yih-Yin; Singh, Jasprit

2002-03-01

The past few years have been considerable efforts in growth and device application of self-assembled quantum dots. Quantum dots based on the InAs/GaAs system have been widely studied for lasers and detectors. In these structures InAs is under a large compressive strain making it difficult to have a large number stacked InAs/GaAs dots. In this paper we examine self assembled dots based on using GaAs as a substrate but using a GaAsP region to counterbalance the compressive strain in the InAs region allowing for a lower overall strain energy. We will present a comparison of the InAs/GaAs and InAs/GaAsP/GaAs self assembled dots by examining the strain energy per unit volume and the electronic spectra. The strain energy is calculated using the valence force field method and the electronic spectra is calculated using the 8 band k -- p method. The effective energy bandgap of the same size InAs dot in GaAs matrice is found 0.952 eV and is 0.928 eV in GaAs_0.8P_0.2 matrice.

Quantum Sensing of Mechanical Motion with a Single InAs Quantum Dot

DTIC Science & Technology

2017-03-01

Washing nc., Columbia Research La Tech, Black y of California , We comp in or...of coupled QDs in similar structures. We anticipate that this research will enable a new class of precision sensors based on solid state...nuclear materials. This research also has the potential to revolutionize the growing field of coupling quantum systems to macroscopic systems for

Quantum Dot Photonics

NASA Astrophysics Data System (ADS)

Kinnischtzke, Laura A.

We report on several experiments using single excitons confined to single semiconductor quantum dots (QDs). Electric and magnetic fields have previously been used as experimental knobs to understand and control individual excitons in single quantum dots. We realize new ways of electric field control by changing materials and device geometry in the first two experiments with strain-based InAs QDs. A standard Schottky diode heterostructure is demonstrated with graphene as the Schottky gate material, and its performance is bench-marked against a diode with a standard gate material, semi-transparent nickel-chromium (NiCr). This change of materials increases the photon collection rate by eliminating absorption in the metallic NiCr layer. A second set of experiments investigates the electric field response of QDs as a possible metrology source. A linear voltage potential drop in a plane near the QDs is used to describe how the spatially varying voltage profile is also imparted on the QDs. We demonstrate a procedure to map this voltage profile as a preliminary route towards a full quantum sensor array. Lastly, InAs QDs are explored as potential spin-photon interfaces. We describe how a magnetic field is used to realize a reversible exchange of information between light and matter, including a discussion of the polarization-dependence of the photoluminesence, and how that can be linked to the spin of a resident electron or hole. We present evidence of this in two wavelength regimes for InAs quantum dots, and discuss how an external magnetic field informs the spin physics of these 2-level systems. This thesis concludes with the discovery of a new class of quantum dots. As-yet unidentified defect states in single layer tungsten diselenide (WSe 2 ) are shown to host quantum light emission. We explore the spatial extent of electron confinement and tentatively identify a radiative lifetime of 1 ns for these single photon emitters.

Transfer and retrieval of optical coherence to strain-compensated quantum dots using a heterodyne photon-echo technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Suzuki, Kazumasa; Ishi-Hayase, Junko; Akahane, Kouichi

2013-12-04

We performed the proof-of-principle demonstration of photon-echo quantum memory using strain-compensated InAs quantum dot ensemble in the telecommunication wavelength range. We succeeded in transfer and retrieval of relative phase of a time-bin pulse with a high fidelity. Our demonstration suggests the possibility of realizing ultrabroadband, high time-bandwidth products, multi-mode quantum memory which is operable at telecommunication wavelength.

Long wavelength (>1.55 {mu}m) room temperature emission and anomalous structural properties of InAs/GaAs quantum dots obtained by conversion of In nanocrystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Urbanczyk, A.; Keizer, J. G.; Koenraad, P. M.

2013-02-18

We demonstrate that molecular beam epitaxy-grown InAs quantum dots (QDs) on (100) GaAs obtained by conversion of In nanocrystals enable long wavelength emission in the InAs/GaAs material system. At room temperature they exhibit a broad photoluminescence band that extends well beyond 1.55 {mu}m. We correlate this finding with cross-sectional scanning tunneling microscopy measurements. They reveal that the QDs are composed of pure InAs which is in agreement with their long-wavelength emission. Additionally, the measurements reveal that the QDs have an anomalously undulated top surface which is very different to that observed for Stranski-Krastanow grown QDs.

Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ji, Hai-Ming; Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083; Liang, Baolai, E-mail: bliang@cnsi.ucla.edu

2015-03-09

We investigate the photoluminescence (PL) properties of a hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot (QD) structure grown in a GaAs matrix by molecular beam epitaxy. This hybrid QD structure exhibits more intense PL with a broader spectral range, compared with control samples that contain only InAs or GaSb QDs. This enhanced PL performance is attributed to additional electron and hole injection from the type-I InAs QDs into the adjacent type-II GaSb QDs. We confirm this mechanism using time-resolved and power-dependent PL. These hybrid QD structures show potential for high efficiency QD solar cell applications.

Reflection high energy electron diffraction observation of surface mass transport at the two- to three-dimensional growth transition of InAs on GaAs(001)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Patella, F.; Arciprete, F.; Fanfoni, M.

2005-12-19

We have followed by reflection high-energy electron diffraction the nucleation of InAs quantum dots on GaAs(001), grown by molecular-beam epitaxy with growth interruptions. Surface mass transport gives rise, at the critical InAs thickness, to a huge nucleation of three-dimensional islands within 0.2 monolayers (ML). Such surface mass diffusion has been evidenced by observing the transition of the reflection high-energy electron diffraction pattern from two- to three-dimensional during the growth interruption after the deposition of 1.59 ML of InAs. It is suggested that the process is driven by the As{sub 2} adsorption-desorption process and by the lowering of the In bindingmore » energy due to compressive strain. The last condition is met first in the region surrounding dots at step edges where nucleation predominantly occurs.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Salii, R. A.; Mintairov, S. A.; Brunkov, P. N.

The specific features of growth in the InAs-GaAs system by the metal-organic chemical vapor deposition method are studied. The dependences of the In content of the InxGa{sub 1−x}As solid solution and of the InAs growth rate on the molar flow of In in a wide temperature range (480–700°C) are determined. The growth processes of InAs quantum dots (QDs) on GaAs with different surface misorientations are examined. The conditions are found in which InAs QDs are formed with a small number of defects and at a high density on a GaAs “sublayer” grown at a high rate. An epitaxial technique ismore » developed for the synthesis of InAs QDs with multimodal size distribution and an extended photoluminescence spectrum, which can be effectively used in designing solar cells with QDs in the active region.« less

Periodic scarred States in open quantum dots as evidence of quantum Darwinism.

PubMed

Burke, A M; Akis, R; Day, T E; Speyer, Gil; Ferry, D K; Bennett, B R

2010-04-30

Scanning gate microscopy (SGM) is used to image scar structures in an open quantum dot, which is created in an InAs quantum well by electron-beam lithography and wet etching. The scanned images demonstrate periodicities in magnetic field that correlate to those found in the conductance fluctuations. Simulations have shown that these magnetic transform images bear a strong resemblance to actual scars found in the dot that replicate through the modes in direct agreement with quantum Darwinism.

Periodic Scarred States in Open Quantum Dots as Evidence of Quantum Darwinism

NASA Astrophysics Data System (ADS)

Burke, A. M.; Akis, R.; Day, T. E.; Speyer, Gil; Ferry, D. K.; Bennett, B. R.

2010-04-01

Scanning gate microscopy (SGM) is used to image scar structures in an open quantum dot, which is created in an InAs quantum well by electron-beam lithography and wet etching. The scanned images demonstrate periodicities in magnetic field that correlate to those found in the conductance fluctuations. Simulations have shown that these magnetic transform images bear a strong resemblance to actual scars found in the dot that replicate through the modes in direct agreement with quantum Darwinism.

Spin decoherence of InAs surface electrons by transition metal ions

NASA Astrophysics Data System (ADS)

Zhang, Yao; Soghomonian, V.; Heremans, J. J.

2018-04-01

Spin interactions between a two-dimensional electron system at the InAs surface and transition metal ions, Fe3 +, Co2 +, and Ni2 +, deposited on the InAs surface, are probed by antilocalization measurements. The spin-dependent quantum interference phenomena underlying the quantum transport phenomenon of antilocalization render the technique sensitive to the spin states of the transition metal ions on the surface. The experiments yield data on the magnitude and temperature dependence of the electrons' inelastic scattering rates, spin-orbit scattering rates, and magnetic spin-flip rates as influenced by Fe3 +, Co2 +, and Ni2 +. A high magnetic spin-flip rate is shown to mask the effects of spin-orbit interaction, while the spin-flip rate is shown to scale with the effective magnetic moment of the surface species. The spin-flip rates and their dependence on temperature yield information about the spin states of the transition metal ions at the surface, and in the case of Co2 + suggest either a spin transition or formation of a spin-glass system.

Thermal transfer and interaction mechanisms of localized excitons in families of InAs quantum dashes grown on InP(001) vicinal substrate emitting near 1.55 μm wavelength

NASA Astrophysics Data System (ADS)

Besahraoui, Fatiha; Bouslama, M.'Hamed; Bouzaiene, Lotfi; Saidi, Faouzi; Maaref, Hassen; Gendry, Michel

2016-06-01

With the help of photoluminescence Spectroscopy (PLS), we have investigated the optoelectronic properties of two different families of InAs quantum dashes (QDashes) grown on misoriented InP(001) substrate with 2∘off miscut angle toward the [110] direction (2∘F type). The lowest full width at half maximum (FWHM) of the PL spectrum measured at 12 K indicates the good self organization of InAs QDashes. The weak ratio of the integrated PL measured in 12-300 K temperature range denotes the good spatial confinement of the photogenerated carriers in InAs QDashes. The fast redshift of the PL peaks energy and the anomalous decrease of the FWHM with the increase of the temperature are attributed to an efficient thermal relaxation process of photogenerated carriers in the vicinal sample. This result is highlighted with the help of theoretical modeling of the PL peak energy as a function of the temperature, using three models (Varshni, “Vina, Logothetidis and Cardona” and Pässler). From experimental and theoretical results, we have evidenced the contribution of longitudinal acoustic-phonons (LA-phonons) in the PL of InAs/InP QDashes, via the deformation potential, especially in high temperatures range. We have attributed this behavior to the strained InAs/InP QDashes and/or to the topography of the vicinal InP(001) substrate which favors the presence of stepped phonons polarized along the steps. These vibrational modes can further interact with the excitons at high temperatures. The measured thermal activation energies of each family of InAs QDashes demonstrate that the InAs wetting layer act as a barrier for the thermoionic emission of photogenerated carriers. This result confirms the good spatial confinement of excitons in this sample.

Ground state initialization in a doubly-charged, vertically-stacked InAs quantum dot molecule

NASA Astrophysics Data System (ADS)

Ross, Aaron; Chow, Colin; Sham, Lu; Bracker, Allan; Gammon, Daniel; Steel, Duncan

2015-03-01

We report on the rapid optical initialization of a subset of the two-electron ground states of a self-assembled, vertically stacked InAs quantum dot molecule, where the states of the electron are approximately localized to separate quantum dots with very little spatial overlap. Four eigenstates, a singlet and three triplets (S,T0,T+, T-) , arise from the exchange coupling and are identified via bias-dependent photoluminescence measurements. The degeneracy of the triplet states is lifted using an in-plane magnetic field (Voigt geometry). This allows for the determination of the in-plane electron and hole g-factors using differential transmission measurements in the co-tunneling regime (to avoid optical pumping). Three of the four eigenstates (S,T+, T-) can then be initialized with high fidelity using continuous wave (CW) optical pumping. Optical transition degeneracies prohibit simple CW initialization of the T0 state. Efforts towards near-unity initialization of the T0 state via two-photon Raman transitions will be presented. This work represents the first step in demonstrating a two-qubit quantum register based on electron spins in self-assembled quantum dots. This work is supported by NSF, ARO, AFSOR, DARPA, and ONR.

1310 nm quantum dot DFB lasers with high dot density and ultra-low linewidth-power product

NASA Technical Reports Server (NTRS)

Qiu, Y.; Lester, L. F.; Gray, A. L.; Newell, T. C.; Hains, C.; Gogna, P.; Muller, R.; Maker, P.; Su, H.; Stintz, A.

2002-01-01

Laterally coupled distributed feedback lasers using high-density InAs quantum dots-in-a-well (DWELL) active region demonstrate a nominal wavelength of 1310 nm, a linewidth as small as 68 kHz, and a linewidth-power product of 100 kHz-mW.

Multi-stack InAs/InGaAs Sub-monolayer Quantum Dots Infrared Photodetectors

DTIC Science & Technology

2013-01-01

013110 (2013) Demonstration of high performance bias-selectable dual- band short-/mid-wavelength infrared photodetectors based on type-II InAs/ GaSb ...been used for the growth of QD structures . These include the formation of self-assembled QD, for example, Stranski-Krastanov (SK) growth mode,8,9 atomic...confinement in SML-QD and the reduction in the amount of InAs used per layer of QD can help stack more layers in a 3-dimensional QD structure . Several

Observation of quantum entanglement between a photon and a single electron spin confined to an InAs quantum dot

NASA Astrophysics Data System (ADS)

Schaibley, John; Burgers, Alex; McCracken, Greg; Duan, Luming; Berman, Paul; Steel, Duncan; Bracker, Allan; Gammon, Daniel; Sham, Lu

2013-03-01

A single electron spin confined to a single InAs quantum dot (QD) can serve as a qubit for quantum information processing. By utilizing the QD's optically excited trion states in the presence of an externally applied magnetic field, the QD spin can be rapidly initialized, manipulated and read out. A key resource for quantum information is the ability to entangle distinct QD spins. One approach relies on intermediate spin-photon entanglement to mediate the entanglement between distant QD spin qubits. We report a demonstration of quantum entanglement between a photon's polarization state and the spin state of a single electron confined to a single QD. Here, the photon is spontaneously emitted from one of the QD's trion states. The emitted photon's polarization along the detection axis is entangled with the resulting spin state of the QD. By performing projective measurements on the photon's polarization state and correlating these measurements with the state of the QD spin in two different bases, we obtain a lower bound on the entanglement fidelity of 0.59 (after background correction). The fidelity bound is limited almost entirely by the timing resolution of our single photon detector. The spin-photon entanglement generation rate is 3 ×103 s-1. Supported by: NSF, MURI, AFOSR, DARPA, ARO.

Profiling the Local Seebeck Coefficient of InAs-GaAs Quantum Dots Using Scanning Thermoelectric Microscopy

NASA Astrophysics Data System (ADS)

Lin, Yen-Hsiang; Walrath, Jenna; Huang, Simon; Goldman, Rachel

2014-03-01

Thermoelectric (TE) devices offer a method of recovering waste heat through solid state conversion of heat to electricity. However, the typical efficiencies of TE devices are 5-10% which constitutes a barrier to wide spread use. There have recently been a number of reports of an increase in the bulk thermopower due to nanostructuring. In addition to our recent report of enhanced thermopower for GaAs embedded with indium nanocrystals, a theoretical study by Mahan and Sofo suggested that the best thermoelectric materials have a delta function density of states. Quantum dots fit ideally into such a picture. To date, the influence of nanostructuring on the electronic LDOS and thermopower has been studied using spatially averaged measurements; a nanoscale investigation of the effects of nanostructures on thermopower has yet to be presented. To investigate the link between dimensionality and TE properties, we are examining structures ranging from QDs to bulk-like layers, comparing SThEM measurements of the local Seebeck coefficient, S, with STS measurements of the local density of states (LDOS). STM, STS, and SThEM performed on InAs quantum dots (QDs) grown on GaAs. SThEM reveals enhanced S-values near the QD edge; STS reveals band-bending at the QD/GaAs interface, suggesting that the S enhancement is due to interfacial charge accumulation.

Gate tunable parallel double quantum dots in InAs double-nanowire devices

NASA Astrophysics Data System (ADS)

Baba, S.; Matsuo, S.; Kamata, H.; Deacon, R. S.; Oiwa, A.; Li, K.; Jeppesen, S.; Samuelson, L.; Xu, H. Q.; Tarucha, S.

2017-12-01

We report fabrication and characterization of InAs nanowire devices with two closely placed parallel nanowires. The fabrication process we develop includes selective deposition of the nanowires with micron scale alignment onto predefined finger bottom gates using a polymer transfer technique. By tuning the double nanowire with the finger bottom gates, we observed the formation of parallel double quantum dots with one quantum dot in each nanowire bound by the normal metal contact edges. We report the gate tunability of the charge states in individual dots as well as the inter-dot electrostatic coupling. In addition, we fabricate a device with separate normal metal contacts and a common superconducting contact to the two parallel wires and confirm the dot formation in each wire from comparison of the transport properties and a superconducting proximity gap feature for the respective wires. With the fabrication techniques established in this study, devices can be realized for more advanced experiments on Cooper-pair splitting, generation of Parafermions, and so on.

The polarization response in InAs quantum dots: theoretical correlation between composition and electronic properties.

PubMed

Usman, Muhammad; Tasco, Vittorianna; Todaro, Maria Teresa; De Giorgi, Milena; O'Reilly, Eoin P; Klimeck, Gerhard; Passaseo, Adriana

2012-04-27

III-V growth and surface conditions strongly influence the physical structure and resulting optical properties of self-assembled quantum dots (QDs). Beyond the design of a desired active optical wavelength, the polarization response of QDs is of particular interest for optical communications and quantum information science. Previous theoretical studies based on a pure InAs QD model failed to reproduce experimentally observed polarization properties. In this work, multi-million atom simulations are performed in an effort to understand the correlation between chemical composition and polarization properties of QDs. A systematic analysis of QD structural parameters leads us to propose a two-layer composition model, mimicking In segregation and In-Ga intermixing effects. This model, consistent with mostly accepted compositional findings, allows us to accurately fit the experimental PL spectra. The detailed study of QD morphology parameters presented here serves as a tool for using growth dynamics to engineer the strain field inside and around the QD structures, allowing tuning of the polarization response.

Optical studies of quantum confined nanostructures

NASA Astrophysics Data System (ADS)

Vamivakas, Anthony Nickolas

Recent advances in material growth techniques have led to the laboratory realization of quantum confined nanostructures. By engineering the geometry of these systems it is possible to tailor their optical, electrical and vibrational properties. We now envision integrated electronic and optical devices potentially harnessing quantum mechanical properties of photons, electrons or even phonons. The realization of these next generation devices requires parallel advances in both electrical and optical characterization techniques. In this dissertation we study the optical properties of both zero-dimensional (0D) InAs/GaAs semiconductor quantum dots (QDs) and one-dimensional (1D) single wall carbon nanotubes (SWNTs). We utilize high resolution optical microscopy and spectroscopy techniques to experimentally study both individual QDs and SWNTs. The effect of quantum confinement on light-matter interaction in SWNTs is theoretically investigated. InAs QDs grown by Stranski-Krastanow self-assembly are buried in a GaAs matrix. The planar barriers presented by the dielectric boundary between the GaAs and the host medium limits the optical access to the InAs QDs. Incorporating a numerical aperture increasing microlens (NAIL) into a fiber-based confocal microscope we demonstrate improved ability to couple photons to and from a single InAs QD. With such immersion lens techniques we measure a record 12% extinction of a far-field laser by a single InAs QD. Even typical QD extinction of 6% is visible using a dc power-meter without the need for phase sensitive lock-in detection. This experimental advance will make possible the study of single QDs interacting with engineered vector laser beams. In the optical characterization of SWNTs, one-phonon resonant Raman scattering is employed to measure a tube's electronic resonances and determine the physical diameter and chirality of the tube under study. Recent work has determined excitons dominate the optical response of semiconducting SWNTs. We develop a theory to model the exciton mediated resonant Raman scattering cross-section from a 1D system looking for excitonic signatures in the scattering line shape. Additionally, we theoretically study phonon confinement to a 1D SWNT and use these results to extract the electron-phonon coupling in SWNTs from our Raman measurements. Knowledge of the electron-phonon coupling is a crucial piece of information to characterize a SWNTs electrical transport properties.

Proceedings for the Alaska Meeting on Fundamental Optical Processes in Semiconductors (AMFOPS 󈧅) Held in Girdwood, Alaska on August 5-10, 2001

DTIC Science & Technology

2002-05-31

Arizona Jagdeep Shah Lucent Technologies Advisory Committee Yasuhiko Arakawa University of Tokyo David Citrin Washington State University Hartmut...the dipole moment of the exciton in the dot. WA2 Fabrication and Optical Properties of Quantum Dots: GaN-Based and InAs Quantum Dots Yasuhiko

Theory of Spin States of Quantum Dot Molecules

NASA Astrophysics Data System (ADS)

Ponomarev, I. V.; Reinecke, T. L.; Scheibner, M.; Stinaff, E. A.; Bracker, A. S.; Doty, M. F.; Gammon, D.; Korenev, V. L.

2007-04-01

The photoluminescence spectrum of an asymmetric pair of coupled InAs quantum dots in an applied electric field shows a rich pattern of level anticrossings, crossings and fine structure that can be understood as a superposition of charge and spin configurations. We present a theoretical model that provides a description of the energy positions and intensities of the optical transitions in exciton, biexciton and charged exciton states of coupled quantum dots molecules.

Photoelectric properties of the metamorphic InAs/InGaAs quantum dot structure at room temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Golovynskyi, S. L., E-mail: golovynskyi@isp.kiev.ua; Seravalli, L.; Trevisi, G.

We present the study of optical and photoelectric properties of InAs quantum dots (QDs) grown on a metamorphic In{sub 0.15}Ga{sub 0.85}As buffer layer: such nanostructures show efficient light emission in the telecom window at 1.3 μm (0.95 eV) at room temperature. We prepared a sample with vertical geometry of contacts isolated from the GaAs substrate. The structure is found to be photosensitive in the spectral range above 0.9 eV at room temperature, showing distinctive features in the photovoltage and photocurrent spectra attributed to QDs, InAs wetting layer, and In{sub 0.15}Ga{sub 0.85}As metamorphic buffer, while a drop in the photoelectric signal above 1.36 eV ismore » related to the GaAs layer. No effect of defect centers on the photoelectrical properties is found, although they are observed in the absorption spectrum. We conclude that metamorphic QDs have a low amount of interface-related defects close to the optically active region and charge carriers can be effectively collected into InAs QDs.« less

Detuning dependence of Rabi oscillations in an InAs self-assembled quantum dot ensemble

NASA Astrophysics Data System (ADS)

Suzuki, Takeshi; Singh, Rohan; Bayer, Manfred; Ludzwig, Arne; Wieck, Andreas D.; Cundiff, Steven T.

2018-04-01

We study the coherent evolution of an InAs self-assembled quantum dot (QD) ensemble in the ultrafast regime. The evolution of the entire frequency distribution is revealed by performing prepulse two-dimensional (2D) coherent spectroscopy. Charged and neutral QDs display distinct nonlinear responses arising from two-level trion and four-level exciton-biexciton systems, respectively, and each signal is clearly separated in 2D spectra. Whereas the signals for charged QDs are symmetric with respect to the detuning, those for neutral QDs are asymmetric due to the asymmetric four-level energy structure. Experimental results for charged and neutral QDs are well reproduced by solving the optical Bloch equations, including detuning and excitation-induced dephasing (EID) effects. The temperature dependence suggests that wetting-layer carriers play an important role in EID.

Magneto optical properties of self-assembled InAs quantum dots for quantum information processing

NASA Astrophysics Data System (ADS)

Tang, Jing; Xu, Xiu-Lai

2018-02-01

Not Available Project supported by the National Basic Research Program of China (Grant No. 2014CB921003), the National Natural Science Foundation of China (Grant Nos. 11721404, 51761145104, and 61675228), the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant Nos. XDB07030200 and XDPB0803), and the CAS Interdisciplinary Innovation Team.

Spin-dependent quantum transport in nanoscaled geometries

NASA Astrophysics Data System (ADS)

Heremans, Jean J.

2011-10-01

We discuss experiments where the spin degree of freedom leads to quantum interference phenomena in the solid-state. Under spin-orbit interactions (SOI), spin rotation modifies weak-localization to weak anti-localization (WAL). WAL's sensitivity to spin- and phase coherence leads to its use in determining the spin coherence lengths Ls in materials, of importance moreover in spintronics. Using WAL we measure the dependence of Ls on the wire width w in narrow nanolithographic ballistic InSb wires, ballistic InAs wires, and diffusive Bi wires with surface states with Rashba-like SOI. In all three systems we find that Ls increases with decreasing w. While theory predicts the increase for diffusive wires with linear (Rashba) SOI, we experimentally conclude that the increase in Ls under dimensional confinement may be more universal, with consequences for various applications. Further, in mesoscopic ring geometries on an InAs/AlGaSb 2D electron system (2DES) we observe both Aharonov-Bohm oscillations due to spatial quantum interference, and Altshuler-Aronov-Spivak oscillations due to time-reversed paths. A transport formalism describing quantum coherent networks including ballistic transport and SOI allows a comparison of spin- and phase coherence lengths extracted for such spatial- and temporal-loop quantum interference phenomena. We further applied WAL to study the magnetic interactions between a 2DES at the surface of InAs and local magnetic moments on the surface from rare earth (RE) ions (Gd3+, Ho3+, and Sm3+). The magnetic spin-flip rate carries information about magnetic interactions. Results indicate that the heavy RE ions increase the SOI scattering rate and the spin-flip rate, the latter indicating magnetic interactions. Moreover Ho3+ on InAs yields a spin-flip rate with an unusual power 1/2 temperature dependence, possibly characteristic of a Kondo system. We acknowledge funding from DOE (DE-FG02-08ER46532).

Optical signatures of coupled quantum dots.

PubMed

Stinaff, E A; Scheibner, M; Bracker, A S; Ponomarev, I V; Korenev, V L; Ware, M E; Doty, M F; Reinecke, T L; Gammon, D

2006-02-03

An asymmetric pair of coupled InAs quantum dots is tuned into resonance by applying an electric field so that a single hole forms a coherent molecular wave function. The optical spectrum shows a rich pattern of level anticrossings and crossings that can be understood as a superposition of charge and spin configurations of the two dots. Coulomb interactions shift the molecular resonance of the optically excited state (charged exciton) with respect to the ground state (single charge), enabling light-induced coupling of the quantum dots. This result demonstrates the possibility of optically coupling quantum dots for application in quantum information processing.

Optical Signatures of Coupled Quantum Dots

NASA Astrophysics Data System (ADS)

Stinaff, E. A.; Scheibner, M.; Bracker, A. S.; Ponomarev, I. V.; Korenev, V. L.; Ware, M. E.; Doty, M. F.; Reinecke, T. L.; Gammon, D.

2006-02-01

An asymmetric pair of coupled InAs quantum dots is tuned into resonance by applying an electric field so that a single hole forms a coherent molecular wave function. The optical spectrum shows a rich pattern of level anticrossings and crossings that can be understood as a superposition of charge and spin configurations of the two dots. Coulomb interactions shift the molecular resonance of the optically excited state (charged exciton) with respect to the ground state (single charge), enabling light-induced coupling of the quantum dots. This result demonstrates the possibility of optically coupling quantum dots for application in quantum information processing.

Modeling of the Magnetization Behavior of Realistic Self-Organized InAs/GaAs Quantum Craters as Observed with Cross-Sectional STM

NASA Astrophysics Data System (ADS)

Fomin, V. M.; Gladilin, V. N.; Devreese, J. T.; Offermans, P.; Koenraad, P. M.; Wolter, J. H.; García, J. M.; Granados, D.

2005-06-01

Recently, using cross-sectional scanning-tunneling microscopy (X-STM), it was shown that self-organized ring-like InAs quantum dots are much smaller in diameter than it is expected from atomic force microscopy measurements and, moreover, that they possess a depression rather than an opening in the central region. For those quantum craters, we analyze the possibility to reveal the electronic properties (like the Aharonov-Bohm oscillations) peculiar to doubly connected geometry of quantum rings.

Formation of InAs nanocrystals in Si by high-fluence ion implantation

NASA Astrophysics Data System (ADS)

Komarov, F.; Vlasukova, L.; Wesch, W.; Kamarou, A.; Milchanin, O.; Grechnyi, S.; Mudryi, A.; Ivaniukovich, A.

2008-08-01

We have studied the formation of InAs precipitates with dimensions of several nanometers in silicon by means of As (245 keV, 5 × 10 16 cm -2) and In (350 keV, 4.5 × 10 16 cm -2) implantation at 500 °C and subsequent annealing at 900 °C for 45 min. RBS, SIMS, TEM/TED, RS and PL techniques were used to characterize the implanted layers. The surface density of the precipitates has been found to be about 1.2 × 10 11 cm -2. Most of the crystallites are from 3 nm to 6 nm large. A band at 1.3 μm has been registered in the low-temperature PL spectra of (As + In) implanted and annealed silicon crystals. The PL band position follows the quantum confinement model for InAs.

Functionalization of Semiconductor Nanomaterials for Optoelectronic Devices And Components

DTIC Science & Technology

2015-03-04

conversion efficiency of InAs quantum dot solar cell by using a single layer anatase TiO2 anti-reflection coating,” R. Vasan, Y. F. Makableh, J. C...dx.doi.org/10.1557//opl.2013.742 9. “The Optimization of InP/ZnS Core/Shell Nanocrystals and TiO2 Nanotubes for Quantum Dot Sensitized Solar Cells ...Quantum Dots Solar Cells Performance,” J. C. Sarker, Y. F. Makableh, R. Vasan, S. Lee, M. O. Manasreh, and M. Benamara, IEEE J. Photovoltaic. (submitted

Investigation of carrier dynamics in InAs/GaAsSb quantum dots with different silicon delta-doping levels

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ban, Keun-Yong; Kim, Yeongho; Kuciauskas, Darius

2016-11-10

The optical properties of InAs quantum dots (QDs) embedded in a GaAsSb matrix with different delta (d)-doping levels of 0, 2, 4, and 6 electrons per dot (e-/dot), incorporated to control the occupation of QD electronic states, are studied by photoluminescence (PL) spectroscopy. The time-resolved PL data taken at 10 K reveal that the increase of δ-doping density from 2 to 6 e -/dot decreases the recombination lifetime of carriers at ground states of the QDs from 996 ± 36 to 792 ± 19 ps, respectively. Furthermore, the carrier lifetime of the sample with 4 e -/dot is found tomore » increase at a slower rate than that of the undoped sample as temperature increases above 70 K. An Arrhenius plot of the temperature dependent PL intensity indicates that the thermal activation energy of electrons in the QDs, required for carrier escape from the dot ground state to continuum state, is increased when the d-doping density is high enough (>4 e -/dot). These results are attributed to the enhanced Coulomb interaction of electrons provided by the d-doping, leading to reduced thermal quenching of the PL.« less

Template-Assisted Scalable Nanowire Networks

NASA Astrophysics Data System (ADS)

Friedl, Martin; Cerveny, Kris; Weigele, Pirmin; Tütüncüoglu, Gozde; Martí-Sánchez, Sara; Huang, Chunyi; Patlatiuk, Taras; Potts, Heidi; Sun, Zhiyuan; Hill, Megan O.; Güniat, Lucas; Kim, Wonjong; Zamani, Mahdi; Dubrovskii, Vladimir G.; Arbiol, Jordi; Lauhon, Lincoln J.; Zumbühl, Dominik M.; Fontcuberta i Morral, Anna

2018-04-01

Topological qubits based on Majorana fermions have the potential to revolutionize the emerging field of quantum computing by making information processing significantly more robust to decoherence. Nanowires (NWs) are a promising medium for hosting these kinds of qubits, though branched NWs are needed to perform qubit manipulations. Here we report gold-free templated growth of III-V NWs by molecular beam epitaxy using an approach that enables patternable and highly regular branched NW arrays on a far greater scale than what has been reported thus far. Our approach relies on the lattice-mismatched growth of InAs on top of defect-free GaAs nanomembranes (NMs) yielding laterally-oriented, low-defect InAs and InGaAs NWs whose shapes are determined by surface and strain energy minimization. By controlling NM width and growth time, we demonstrate the formation of compositionally graded NWs with cross-sections less than 50 nm. Scaling the NWs below 20 nm leads to the formation of homogenous InGaAs NWs which exhibit phase-coherent, quasi-1D quantum transport as shown by magnetoconductance measurements. These results are an important advance towards scalable topological quantum computing.

Template-Assisted Scalable Nanowire Networks.

PubMed

Friedl, Martin; Cerveny, Kris; Weigele, Pirmin; Tütüncüoglu, Gozde; Martí-Sánchez, Sara; Huang, Chunyi; Patlatiuk, Taras; Potts, Heidi; Sun, Zhiyuan; Hill, Megan O; Güniat, Lucas; Kim, Wonjong; Zamani, Mahdi; Dubrovskii, Vladimir G; Arbiol, Jordi; Lauhon, Lincoln J; Zumbühl, Dominik M; Fontcuberta I Morral, Anna

2018-04-11

Topological qubits based on Majorana Fermions have the potential to revolutionize the emerging field of quantum computing by making information processing significantly more robust to decoherence. Nanowires are a promising medium for hosting these kinds of qubits, though branched nanowires are needed to perform qubit manipulations. Here we report a gold-free templated growth of III-V nanowires by molecular beam epitaxy using an approach that enables patternable and highly regular branched nanowire arrays on a far greater scale than what has been reported thus far. Our approach relies on the lattice-mismatched growth of InAs on top of defect-free GaAs nanomembranes yielding laterally oriented, low-defect InAs and InGaAs nanowires whose shapes are determined by surface and strain energy minimization. By controlling nanomembrane width and growth time, we demonstrate the formation of compositionally graded nanowires with cross-sections less than 50 nm. Scaling the nanowires below 20 nm leads to the formation of homogeneous InGaAs nanowires, which exhibit phase-coherent, quasi-1D quantum transport as shown by magnetoconductance measurements. These results are an important advance toward scalable topological quantum computing.

1300 nm wavelength InAs quantum dot photodetector grown on silicon.

PubMed

Sandall, Ian; Ng, Jo Shien; David, John P R; Tan, Chee Hing; Wang, Ting; Liu, Huiyun

2012-05-07

The optical and electrical properties of InAs quantum dots epitaxially grown on a silicon substrate have been investigated to evaluate their potential as both photodiodes and avalanche photodiodes (APDs) operating at a wavelength of 1300 nm. A peak responsivity of 5 mA/W was observed at 1280 nm, with an absorption tail extending beyond 1300 nm, while the dark currents were two orders of magnitude lower than those reported for Ge on Si photodiodes. The diodes exhibited avalanche breakdown at 22 V reverse bias which is probably dominated by impact ionisation occurring in the GaAs and AlGaAs barrier layers. A red shift in the absorption peak of 61.2 meV was measured when the reverse bias was increased from 0 to 22 V, which we attributed to the quantum confined stark effect. This shift also leads to an increase in the responsivity at a fixed wavelength as the bias is increased, yielding a maximum increase in responsivity by a factor of 140 at the wavelength of 1365 nm, illustrating the potential for such a structure to be used as an optical modulator.

High efficiency low threshold current 1.3 μm InAs quantum dot lasers on on-axis (001) GaP/Si

NASA Astrophysics Data System (ADS)

Jung, Daehwan; Norman, Justin; Kennedy, M. J.; Shang, Chen; Shin, Bongki; Wan, Yating; Gossard, Arthur C.; Bowers, John E.

2017-09-01

We demonstrate highly efficient, low threshold InAs quantum dot lasers epitaxially grown on on-axis (001) GaP/Si substrates using molecular beam epitaxy. Electron channeling contrast imaging measurements show a threading dislocation density of 7.3 × 106 cm-2 from an optimized GaAs template grown on GaP/Si. The high-quality GaAs templates enable as-cleaved quantum dot lasers to achieve a room-temperature continuous-wave (CW) threshold current of 9.5 mA, a threshold current density as low as 132 A/cm2, a single-side output power of 175 mW, and a wall-plug-efficiency of 38.4% at room temperature. As-cleaved QD lasers show ground-state CW lasing up to 80 °C. The application of a 95% high-reflectivity coating on one laser facet results in a CW threshold current of 6.7 mA, which is a record-low value for any kind of Fabry-Perot laser grown on Si.

Fundamental Study of Antimonide Nanostructures by Molecular Beam Epitaxy

DTIC Science & Technology

2016-02-04

Faculty of Engineering, Chulalongkorn University, Phayathai Road, Bangkok 10330, Thailand Tel. (+66) 2218-6524, Fax. (+66) 2218-6523 E-mail...Engineering Department Faculty of Engineering Chulalongkorn University, Phayathai Road, Bangkok 10330, Thailand Tel. 662-218-6524, Fax. 662-218-6523...September 2014 to July 2015 being conducted at Chulalongkorn University in Thailand . Following the research work on InAs quantum dots (QDs) and quantum

Coherent Control to Prepare an InAs Quantum Dot for Spin-Photon Entanglement

NASA Astrophysics Data System (ADS)

Webster, L. A.; Truex, K.; Duan, L.-M.; Steel, D. G.; Bracker, A. S.; Gammon, D.; Sham, L. J.

2014-03-01

We optically generated an electronic state in a single InAs /GaAs self-assembled quantum dot that is a precursor to the deterministic entanglement of the spin of the electron with an emitted photon in the proposal of W. Yao, R.-B. Liu, and L. J. Sham [Phys. Rev. Lett. 95, 030504 (2005).]. A superposition state is prepared by optical pumping to a pure state followed by an initial pulse. By modulating the subsequent pulse arrival times and precisely controlling them using interferometric measurement of path length differences, we are able to implement a coherent control technique to selectively drive exactly one of the two components of the superposition to the ground state. This optical transition contingent on spin was driven with the same broadband pulses that created the superposition through the use of a two pulse coherent control sequence. A final pulse affords measurement of the coherence of this "preentangled" state.

Sub-wavelength InAs quantum dot micro-disk lasers epitaxially grown on exact Si (001) substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wan, Yating; Li, Qiang; Lau, Kei May, E-mail: eekmlau@ust.hk

Subwavelength micro-disk lasers (MDLs) as small as 1 μm in diameter on exact (001) silicon were fabricated using colloidal lithography. The micro-cavity gain medium incorporating five-stacked InAs quantum dot layers was grown on a high crystalline quality GaAs-on-V-grooved-Si template with no absorptive intermediate buffers. Under continuous-wave optical pumping, the MDLs on silicon exhibit lasing in the 1.2-μm wavelength range with low thresholds down to 35 μW at 10 K. The MDLs compare favorably with devices fabricated on native GaAs substrates and state-of-the-art work reported elsewhere. Feasibility of device miniaturization can be projected by size-dependent lasing characteristics. The results show a promising path towardsmore » dense integration of photonic components on the mainstream complementary metal–oxide–semiconductor platform.« less

Self-ordering of InAs nanostructures on (631)A/B GaAs substrates

NASA Astrophysics Data System (ADS)

Eugenio-López, Eric; Alejandro Mercado-Ornelas, Christian; Kisan Patil, Pallavi; Cortes-Mestizo, Irving Eduardo; Ángel Espinoza-Figueroa, José; Gorbatchev, Andrei Yu; Shimomura, Satoshi; Ithsmel Espinosa-Vega, Leticia; Méndez-García, Víctor Hugo

2018-02-01

The high order self-organization of quantum dots is demonstrated in the growth of InAs on a GaAs(631)-oriented crystallographic plane. The unidimensional ordering of the quantum dots (QDs) strongly depends on the As flux beam equivalent pressure (P As) and the cation/anion terminated surface, i.e., A- or B-type GaAs(631). The self-organization of QDs occurs for both surface types along [\\bar{1}13], while the QD shape and size distribution were found to be different for the self-assembly on the A- and B-type surfaces. In addition, the experiments showed that any misorientation from the (631) plane, which results from the buffer layer waviness, does not allow a high order of unidimensional arrangements of QDs. The optical properties were studied by photoluminescence spectroscopy, where good correspondence was obtained between the energy transitions and the size of the QDs.

Emission spectra of a laser based on an In(Ga)As/GaAs quantum-dot superlattice

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sobolev, M. M., E-mail: m.sobolev@mail.ioffe.ru; Buyalo, M. S.; Nevedomskiy, V. N.

2015-10-15

The spectral characteristics of a laser with an active region based on a ten-layer system of In(Ga)As/GaAs vertically correlated quantum dots with 4.5-nm GaAs spacer layers between InAs quantum dots are studied under the conditions of spontaneous and stimulated emission, depending on the current and the duration of pump pulses. Data obtained by transmission electron microscopy and electroluminescence and absorption polarization anisotropy measurements make it possible to demonstrate that the investigated system of tunnel-coupled InAs quantum dots separated by thin GaAs barriers represents a quantum-dot superlattice. With an increase in the laser pump current, the electroluminescence intensity increases linearly andmore » the spectral position of the electroluminescence maximum shifts to higher energies, which is caused by the dependence of the miniband density-of-states distribution on the pump current. Upon exceeding the threshold current, multimode lasing via the miniband ground state is observed. One of the lasing modes can be attributed to the zero-phonon line, and the other is determined by the longitudinal-optical phonon replica of quantum-dot emission. The results obtained give evidence that, under conditions of the laser pumping of an In(Ga)As/GaAs quantum-dot superlattice, strong coupling between the discrete electron states in the miniband and optical phonons takes place. This leads to the formation of quantum-dot polarons, resulting from the resonant mixing of electronic states whose energy separation is comparable to the optical-phonon energy.« less

Apparent critical thickness versus temperature for InAs quantum dot growth on GaAs(001)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Patella, F.; Arciprete, F.; Fanfoni, M.

2006-04-17

We studied the temperature dependence of the two-dimensional to three-dimensional growth transition in InAs/GaAs(001) heteroepitaxy by means of reflection high energy electron diffraction and atomic force microscopy. The observed shift of the transition to higher InAs deposition times, at temperatures above 500 deg. C, is not a change of critical thickness for islanding, which instead, is constant in the 450-560 deg. C range. Consequently, In-Ga intermixing and surface and interface strain have a negligible dependence on temperature in this range.

Zero-phonon-line emission of single molecules for applications in quantum information processing

NASA Astrophysics Data System (ADS)

Kiraz, Alper; Ehrl, M.; Mustecaplioglu, O. E.; Hellerer, T.; Brauchle, C.; Zumbusch, A.

2005-07-01

A single photon source which generates transform limited single photons is highly desirable for applications in quantum optics. Transform limited emission guarantees the indistinguishability of the emitted single photons. This, in turn brings groundbreaking applications in linear optics quantum information processing within an experimental reach. Recently, self-assembled InAs quantum dots and trapped atoms have successfully been demonstrated as such sources for highly indistinguishable single photons. Here, we demonstrate that nearly transform limited zero-phonon-line (ZPL) emission from single molecules can be obtained by using vibronic excitation. Furthermore we report the results of coincidence detection experiments at the output of a Michelson-type interferometer. These experiments reveal Hong-Ou-Mandel correlations as a proof of the indistinguishability of the single photons emitted consecutively from a single molecule. Therefore, single molecules constitute an attractive alternative to single InAs quantum dots and trapped atoms for applications in linear optics quantum information processing. Experiments were performed with a home-built confocal microscope keeping the sample in a superfluid liquid Helium bath at 1.4K. We investigated terrylenediimide (TDI) molecules highly diluted in hexadecane (Shpol'skii matrix). A continuous wave single mode dye laser was used for excitation of vibronic transitions of individual molecules. From the integral fluorescence, the ZPL of single molecules was selected with a spectrally narrow interference filter. The ZPL emission was then sent to a scanning Fabry-Perot interferometer for linewidth measurements or a Michelson-type interferometer for coincidence detection.

Annealing effect of the InAs dot-in-well structure grown by MBE

NASA Astrophysics Data System (ADS)

Zhao, Xuyi; Wang, Peng; Cao, Chunfang; Yan, Jinyi; Zha, Fangxing; Wang, Hailong; Gong, Qian

2017-12-01

We have demonstrated that in situ annealing effect has to be taken into account in order to realize the 1.31 μm InAs quantum dot (QD) lasers with the dot-in-well (DWELL) structure. The photoluminescence (PL) properties have been investigated for the InAs DWELL samples annealed at different temperatures in situ, simulating the annealing process during the growth of the top cladding AlGaAs layer in the laser structure. The QDs with large size in the DWELL structure are vulnerable to the annealing process at temperatures above 550 °C, revealed by the drastic change in the PL spectra. However, the DWELL structure is stable during the annealing process at 540 °C for three hours. The thermal stability of the QDs in the DWELL structure has to be considered in the growth of QD lasers for long wavelength operation.

Quantitative analysis of the interplay between InAs quantum dots and wetting layer during the GaAs capping process

NASA Astrophysics Data System (ADS)

González, D.; Braza, V.; Utrilla, A. D.; Gonzalo, A.; Reyes, D. F.; Ben, T.; Guzman, A.; Hierro, A.; Ulloa, J. M.

2017-10-01

A procedure to quantitatively analyse the relationship between the wetting layer (WL) and the quantum dots (QDs) as a whole in a statistical way is proposed. As we will show in the manuscript, it allows determining, not only the proportion of deposited InAs held in the WL, but also the average In content inside the QDs. First, the amount of InAs deposited is measured for calibration in three different WL structures without QDs by two methodologies: strain mappings in high-resolution transmission electron microscopy images and compositional mappings with ChemiSTEM x-ray energy spectrometry. The area under the average profiles obtained by both methodologies emerges as the best parameter to quantify the amount of InAs in the WL, in agreement with high-resolution x-ray diffraction results. Second, the effect of three different GaAs capping layer (CL) growth rates on the decomposition of the QDs is evaluated. The CL growth rate has a strong influence on the QD volume as well as the WL characteristics. Slower CL growth rates produce an In enrichment of the WL if compared to faster ones, together with a diminution of the QD height. In addition, assuming that the QD density does not change with the different CL growth rates, an estimation of the average In content inside the QDs is given. The high Ga/In intermixing during the decomposition of buried QDs does not only trigger a reduction of the QD height, but above all, a higher impoverishment of the In content inside the QDs, therefore modifying the two most important parameters that determine the optical properties of these structures.

Three-dimensional lattice matching of epitaxially embedded nanoparticles

NASA Astrophysics Data System (ADS)

May, Brelon J.; Anderson, Peter M.; Myers, Roberto C.

2017-02-01

For a given degree of in-plane lattice mismatch between a two-dimensional (2D) epitaxial layer and a substrate (ɛIP*), there is a critical thickness above which interfacial defects form to relax the elastic strain energy. Here, we extend the 2D lattice-matching conditions to three-dimensions in order to predict the critical size beyond which epitaxially encased nanoparticles, characterized by both ɛIP* and out-of-plane lattice mismatch (ɛOP*), relax by dislocation formation. The critical particle length (Lc) at which defect formation proceeds is determined by balancing the reduction in elastic energy associated with dislocation introduction with the corresponding increase in defect energy. Our results, which use a modified Eshelby inclusion technique for an embedded, arbitrarily-faceted nanoparticle, provide new insight to the nanoepitaxy of low dimensional structures, especially quantum dots and nanoprecipitates. By engineering ɛIP* and ɛOP* , the predicted Lc for nanoparticles can be increased to well beyond the case of encapsulation in a homogenous matrix. For the case of truncated pyramidal shaped InAs, Lc 10.8 nm when fully embedded in GaAs (ɛIP* = ɛOP* = - 0.072); 16.4 nm when the particle is grown on GaAs, but capped with InSb (ɛIP* = - 0.072 and ɛOP* =+0.065); and a maximum of 18.4 nm if capped with an alloy corresponding to ɛOP* =+0.037. The effect, which we term "3D Poisson-stabilization" provides a means to increase the epitaxial strain tolerance in epitaxial heterostructures by tailoring ɛOP*.

Distribution of elastic strains appearing in gallium arsenide as a result of doping with isovalent impurities of phosphorus and indium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pavlov, D. A.; Bidus, N. V.; Bobrov, A. I., E-mail: bobrov@phys.unn.ru

2015-01-15

The distribution of elastic strains in a system consisting of a quantum-dot layer and a buried GaAs{sub x}P{sub 1−x} layer is studied using geometric phase analysis. A hypothesis is offered concerning the possibility of controlling the process of the formation of InAs quantum dots in a GaAs matrix using a local isovalent phosphorus impurity.

Zero bias conductance peak in InAs nanowire coupled to superconducting electrodes

NASA Astrophysics Data System (ADS)

Kim, Nam-Hee; Shin, Yun-Sok; Kim, Hong-Seok; Song, Jin-Dong; Doh, Yong-Joo

2018-04-01

We report the occurrence of the zero-bias conductance peak (ZBCP) in an InAs nanowire coupled to PbIn superconductors with varying temperature, bias voltage, and magnetic field. The ZBCP is suppressed with increasing temperature and bias voltage above the Thouless energy of the nanowire. Applying a magnetic field also diminishes the ZBCP when the resultant magnetic flux reaches the magnetic flux quantum h/2e. Our observations are consistent with theoretical expectations of reflectionless tunneling, in which the phase coherence between an electron and its Andreev-reflected hole induces the ZBCP as long as time-reversal symmetry is preserved.

Probing into hybrid organic-molecule and InAs quantum-dots nanosystem with multistacked dots-in-a-well units

NASA Astrophysics Data System (ADS)

Chen, Miaoxiang; Kobashi, Kazufumi

2012-09-01

Hybridizing air-stable organic-molecules with advanced III-V semiconductor quantum-dots (QDs) structures can be utilized to create a new generation of biochemical sensing devices. In order to enhance their optical performances, the active regions in these QDs structures commonly consist of multistacked dots-in-a-well (DWELL) units. The effects of grafted molecules on the performances of the QDs structures with multistacked DWELLs, however, still remain unclear. Here, we show the significant improvements in the optical properties of InAs QDs in a hybrid nanosystem obtained by grafting biocompatible diazonium salt compound (amine donor) atop InAs QDs structure. Since its interface between the QDs structure and molecular monolayer retains an uncontaminated and non-oxidized condition, the nanosystem is an ideal platform to study the intrinsic properties of charge-carrier transport inside the system. Because of the complexity of the energy-levels in the QDs structure due to the existing surface QDs and DWELLs, selective excitation wavelengths (400, 633, and 885 nm, respectively) with different photo-energies are used to exactly analyze the complete charging mechanism in these QDs. A clear view of charge-carrier transfer inside the nanosystem is revealed by employing photoluminescence technique under selective-wavelength excitations. The present work provides new quantitative evidences for exploiting inorganic QDs applications in complex biological systems.

Optically probing the fine structure of a single Mn atom in an InAs quantum dot.

PubMed

Kudelski, A; Lemaître, A; Miard, A; Voisin, P; Graham, T C M; Warburton, R J; Krebs, O

2007-12-14

We report on the optical spectroscopy of a single InAs/GaAs quantum dot doped with a single Mn atom in a longitudinal magnetic field of a few Tesla. Our findings show that the Mn impurity is a neutral acceptor state A0 whose effective spin J=1 is significantly perturbed by the quantum dot potential and its associated strain field. The spin interaction with photocarriers injected in the quantum dot is shown to be ferromagnetic for holes, with an effective coupling constant of a few hundreds of mueV, but vanishingly small for electrons.

Conductance enhancement of InAs/InP heterostructure nanowires by surface functionalization with oligo(phenylene vinylene)s.

PubMed

Schukfeh, Muhammed Ihab; Storm, Kristian; Mahmoud, Ahmed; Søndergaard, Roar R; Szwajca, Anna; Hansen, Allan; Hinze, Peter; Weimann, Thomas; Svensson, Sofia Fahlvik; Bora, Achyut; Dick, Kimberly A; Thelander, Claes; Krebs, Frederik C; Lugli, Paolo; Samuelson, Lars; Tornow, Marc

2013-05-28

We have investigated the electronic transport through 3 μm long, 45 nm diameter InAs nanowires comprising a 5 nm long InP segment as electronic barrier. After assembly of 12 nm long oligo(phenylene vinylene) derivative molecules onto these InAs/InP nanowires, we observed a pronounced, nonlinear I-V characteristic with significantly increased currents of up to 1 μA at 1 V bias, for a back-gate voltage of 3 V. As supported by our model calculations based on a nonequilibrium Green Function approach, we attribute this effect to charge transport through those surface-bound molecules, which electrically bridge both InAs regions across the embedded InP barrier.

Temperature dependence of the size distribution function of InAs quantum dots on GaAs(001)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Arciprete, F.; Fanfoni, M.; Patella, F.

2010-04-15

We present a detailed atomic-force-microscopy study of the effect of annealing on InAs/GaAs(001) quantum dots grown by molecular-beam epitaxy. Samples were grown at a low growth rate at 500 deg. C with an InAs coverage slightly greater than critical thickness and subsequently annealed at several temperatures. We find that immediately quenched samples exhibit a bimodal size distribution with a high density of small dots (<50 nm{sup 3}) while annealing at temperatures greater than 420 deg. C leads to a unimodal size distribution. This result indicates a coarsening process governing the evolution of the island size distribution function which is limitedmore » by the attachment-detachment of the adatoms at the island boundary. At higher temperatures one cannot ascribe a single rate-determining step for coarsening because of the increased role of adatom diffusion. However, for long annealing times at 500 deg. C the island size distribution is strongly affected by In desorption.« less

Harmonic Generation in InAs Nanowire Double Quantum Dots

NASA Astrophysics Data System (ADS)

Schroer, M. D.; Jung, M.; Petersson, K. D.; Petta, J. R.

2012-02-01

InAs nanowires provide a useful platform for investigating the physics of confined electrons subjected to strong spin-orbit coupling. Using tunable, bottom-gated double quantum dots, we demonstrate electrical driving of single spin resonance.ootnotetextS. Nadj-Perge et al., Nature 468, 1084 (2010)^,ootnotetextM.D. Schroer et al., Phys. Rev. Lett. 107, 176811 (2011) We observe a standard spin response when the applied microwave frequency equals the Larmour frequency f0. However, we also observe an anomalous signal at frequencies fn= f0/ n for integer n up to n ˜5. This is equivalent to generation of harmonics of the spin resonance field. While a f0/2 signal has observed,ootnotetextE.A. Laird et al., Phys. Rev. Lett. 99, 246601 (2007) we believe this is the first observation of higher harmonics in spin resonance. Possible mechanisms will be discussed.ootnotetextE.I. Rashba, arXiv:1110.6569 (2011) Acknowledgements: Research supported by the Sloan and Packard Foundations, the NSF, and Army Research Office.

Integrated semiconductor quantum dot scintillation detector: Ultimate limit for speed and light yield

DOE PAGES

Oktyabrsky, Serge; Yakimov, Michael; Tokranov, Vadim; ...

2016-03-30

Here, a picosecond-range timing of charged particles and photons is a long-standing challenge for many high-energy physics, biophysics, medical and security applications. We present a design, technological pathway and challenges, and some properties important for realization of an ultrafast high-efficient room-temperature semiconductor scintillator based on self-assembled InAs quantum dots (QD) embedded in a GaAs matrix. Low QD density (<; 10 15 cm -3), fast (~5 ps) electron capture, luminescence peak redshifted by 0.2-0.3 eV from GaAs absorption edge with fast decay time (0.5-1 ns) along with the efficient energy transfer in the GaAs matrix (4.2 eV/pair) allows for fabrication ofmore » a semiconductor scintillator with the unsurpassed performance parameters. The major technological challenge is fabrication of a large volume (> 1 cm 3 ) of epitaxial QD medium. This requires multiple film separation and bonding, likely using separate epitaxial films as waveguides for improved light coupling. Compared to traditional inorganic scintillators, the semiconductor-QD based scintillators could have about 5x higher light yield and 20x faster decay time, opening a way to gamma detectors with the energy resolution better than 1% and sustaining counting rates MHz. Picosecond-scale timing requires segmented low-capacitance photodiodes integrated with the scintillator. For photons, the proposed detector inherently provides the depth-of-interaction information.« less

The impact of quantum dot filling on dual-band optical transitions via intermediate quantum states

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Jiang, E-mail: jiang.wu@ucl.ac.uk; Passmore, Brandon; Manasreh, M. O.

2015-08-28

InAs/GaAs quantum dot infrared photodetectors with different doping levels were investigated to understand the effect of quantum dot filling on both intraband and interband optical transitions. The electron filling of self-assembled InAs quantum dots was varied by direct doping of quantum dots with different concentrations. Photoresponse in the near infrared and middle wavelength infrared spectral region was observed from samples with low quantum dot filling. Although undoped quantum dots were favored for interband transitions with the absence of a second optical excitation in the near infrared region, doped quantum dots were preferred to improve intraband transitions in the middle wavelengthmore » infrared region. As a result, partial filling of quantum dot was required, to the extent of maintaining a low dark current, to enhance the dual-band photoresponse through the confined electron states.« less

Nonlocal Nuclear Spin Quieting in Quantum Dot Molecules: Optically Induced Extended Two-Electron Spin Coherence Time.

PubMed

Chow, Colin M; Ross, Aaron M; Kim, Danny; Gammon, Daniel; Bracker, Allan S; Sham, L J; Steel, Duncan G

2016-08-12

We demonstrate the extension of coherence between all four two-electron spin ground states of an InAs quantum dot molecule (QDM) via nonlocal suppression of nuclear spin fluctuations in two vertically stacked quantum dots (QDs), while optically addressing only the top QD transitions. Long coherence times are revealed through dark-state spectroscopy as resulting from nuclear spin locking mediated by the exchange interaction between the QDs. Line shape analysis provides the first measurement of the quieting of the Overhauser field distribution correlating with reduced nuclear spin fluctuations.

Nonlocal Nuclear Spin Quieting in Quantum Dot Molecules: Optically Induced Extended Two-Electron Spin Coherence Time

NASA Astrophysics Data System (ADS)

Chow, Colin M.; Ross, Aaron M.; Kim, Danny; Gammon, Daniel; Bracker, Allan S.; Sham, L. J.; Steel, Duncan G.

2016-08-01

We demonstrate the extension of coherence between all four two-electron spin ground states of an InAs quantum dot molecule (QDM) via nonlocal suppression of nuclear spin fluctuations in two vertically stacked quantum dots (QDs), while optically addressing only the top QD transitions. Long coherence times are revealed through dark-state spectroscopy as resulting from nuclear spin locking mediated by the exchange interaction between the QDs. Line shape analysis provides the first measurement of the quieting of the Overhauser field distribution correlating with reduced nuclear spin fluctuations.

Room temperature operation of InxGa1-xSb/InAs type-II quantum well infrared photodetectors grown by MOCVD

NASA Astrophysics Data System (ADS)

Wu, D. H.; Zhang, Y. Y.; Razeghi, M.

2018-03-01

We demonstrate room temperature operation of In0.5Ga0.5Sb/InAs type-II quantum well photodetectors on an InAs substrate grown by metal-organic chemical vapor deposition. At 300 K, the detector exhibits a dark current density of 0.12 A/cm2 and a peak responsivity of 0.72 A/W corresponding to a quantum efficiency of 23.3%, with the calculated specific detectivity of 2.4 × 109 cm Hz1/2/W at 3.81 μm.

High-power 1.25 µm InAs QD VECSEL based on resonant periodic gain structure

NASA Astrophysics Data System (ADS)

Albrecht, Alexander R.; Rotter, Thomas J.; Hains, Christopher P.; Stintz, Andreas; Xin, Guofeng; Wang, Tsuei-Lian; Kaneda, Yushi; Moloney, Jerome V.; Malloy, Kevin J.; Balakrishnan, Ganesh

2011-03-01

We compare an InAs quantum dot (QD) vertical external-cavity surface-emitting laser (VECSEL) design consisting of 4 groups of 3 closely spaced QD layers with a resonant periodic gain (RPG) structure, where each of the 12 QD layers is placed at a separate field antinode. This increased the spacing between the QDs, reducing strain and greatly improving device performance. For thermal management, the GaAs substrate was thinned and indium bonded to CVD diamond. A fiber-coupled 808 nm diode laser was used as pump source, a 1% transmission output coupler completed the cavity. CW output powers over 4.5 W at 1250 nm were achieved.

On the modified active region design of interband cascade lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Motyka, M.; Ryczko, K.; Dyksik, M.

2015-02-28

Type II InAs/GaInSb quantum wells (QWs) grown on GaSb or InAs substrates and designed to be integrated in the active region of interband cascade lasers (ICLs) emitting in the mid infrared have been investigated. Optical spectroscopy, combined with band structure calculations, has been used to probe their electronic properties. A design with multiple InAs QWs has been compared with the more common double W-shaped QW and it has been demonstrated that it allows red shifting the emission wavelength and enhancing the transition oscillator strength. This can be beneficial for the improvements of the ICLs performances, especially when considering their long-wavelengthmore » operation.« less

Novel T-shaped GaSb/InAsN quantum wire for mid-infrared laser applications

NASA Astrophysics Data System (ADS)

Ridene, Said

2017-10-01

In this work, we investigate GaSb /InAs1-xNx T-shaped quantum wire active region in mid-infrared laser. Multi-band k.p model and variational formalism are applied to find the confinement energies, the band structures, and optical gain. We then present a method of numerical calculation that is suited to any T-shaped quantum wire. By tuning the quantum wire thickness, the TE- and TM-polarized optical gain up to 21 ×103 cm-1 can be obtained for λ = 3.11 μm at room temperature (RT), which is very promising to serve as an alternative active region for high-efficiency mid-infrared laser applications.

Quantum dot rolled-up microtube optoelectronic integrated circuit.

PubMed

Bhowmick, Sishir; Frost, Thomas; Bhattacharya, Pallab

2013-05-15

A rolled-up microtube optoelectronic integrated circuit operating as a phototransceiver is demonstrated. The microtube is made of a InGaAs/GaAs strained bilayer with InAs self-organized quantum dots inserted in the GaAs layer. The phototransceiver consists of an optically pumped microtube laser and a microtube photoconductive detector connected by an a-Si/SiO2 waveguide. The loss in the waveguide and responsivity of the entire phototransceiver circuit are 7.96 dB/cm and 34 mA/W, respectively.

A novel quantum steganography scheme for color images

NASA Astrophysics Data System (ADS)

Li, Panchi; Liu, Xiande

In quantum image steganography, embedding capacity and security are two important issues. This paper presents a novel quantum steganography scheme using color images as cover images. First, the secret information is divided into 3-bit segments, and then each 3-bit segment is embedded into the LSB of one color pixel in the cover image according to its own value and using Gray code mapping rules. Extraction is the inverse of embedding. We designed the quantum circuits that implement the embedding and extracting process. The simulation results on a classical computer show that the proposed scheme outperforms several other existing schemes in terms of embedding capacity and security.

Terahertz Photoresponse of a Single InAs Quantum Wire

NASA Astrophysics Data System (ADS)

Peralta, X. G.; Allen, S. J.; Kono, J.; Sakaki, H.; Sugihara, T.; Sasa, S.; Inoue, M.

1997-03-01

The terahertz (THz) photoresponse of a single InAs quantum wire in a high magnetic field has been studied as a function of frequency, polarization and THz field strength. The wire was fabricated by wet chemical etching of a InAs/AlGaSb single quantum well with a mobility of 92000 cm^2/Vs and a density of 7.3x10^11 cm-2. The length of the wire is 2 μm. At high THz field strength , we observe non-resonant heating of the quasi-1-D electron gas in the wire which produces a temperature modulation of the Shubnikov-de Haas oscillations. While the period of the oscillations is independent of THz polarization and frequency, the magnetic field dependent amplitude depends on THz polarization. At low THz power a resonant peak whose position depends on THz frequency is identified as a magnetoplasmon in the single wire. We project the low power results on models of 1-D magnetoplasma oscillations. We are particularly interested in excitations at high terahertz field strength which are beyond the scope of exisiting models. This work is supported by ONR, QUEST and NSF Science and Technology Center, Japan Science and Technology Corporation and Consejo Nacional de Ciencia y Tecnología, México.

Cyclotron resonance of dirac fermions in InAs/GaSb/InAs quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Krishtopenko, S. S.; Ikonnikov, A. V., E-mail: antikon@ipmras.ru; Maremyanin, K. V.

2017-01-15

The band structure of three-layer symmetric InAs/GaSb/InAs quantum wells confined between AlSb barriers is analyzed theoretically. It is shown that, depending on the thicknesses of the InAs and GaSb layers, a normal band structure, a gapless state with a Dirac cone at the center of the Brillouin zone, or inverted band structure (two-dimensional topological insulator) can be realized in this system. Measurements of the cyclotron resonance in structures with gapless band spectra carried out for different electron concentrations confirm the existence of massless Dirac fermions in InAs/GaSb/InAs quantum wells.

Observation of infrared absorption of InAs quantum dot structures in AlGaAs matrix toward high-efficiency solar cells

NASA Astrophysics Data System (ADS)

Yoshikawa, Hirofumi; Watanabe, Katsuyuki; Kotani, Teruhisa; Izumi, Makoto; Iwamoto, Satoshi; Arakawa, Yasuhiko

2018-06-01

In accordance with the detailed balance limit model of single-intermediate-band solar cells (IBSCs), the optimum matrix bandgap and IB–conduction band (CB) energy gap are ∼1.9 and 0.7 eV, respectively. We present the room-temperature polarized infrared absorption of 20 stacked InAs quantum dot (QD) structures in the Al0.32Ga0.68As matrix with a bandgap of ∼1.9 eV for the design of high-efficiency IBSCs by using a multipass waveguide geometry. We find that the IB–CB absorption is almost independent of the light polarization, and estimate the magnitude of the absorption per QD layer to be ∼0.01%. We also find that the IB–CB absorption edge of QD structures with a wide-gap matrix is ∼0.41 eV. These results indicate that both the significant increase in the magnitude of IB–CB absorption and the lower energy of the IB state for the higher IB–CB energy gap are necessary toward the realization of high-efficiency IBSCs.

QuEST: Robust Quantum Gadgets

DTIC Science & Technology

2013-02-28

the size of the entangled states. Publications for 2011-12: S . T. Flammia , A. W. Harrow and J. Shi. “Local Embeddings of Quantum Codes” in...Publications (published) during reporting period: S . T. Flammia , A. W. Harrow and J. Shi. "Local Embeddings of Quantum Codes," in preparation, 2013. A. W...Publications: S . T. Flammia , A. W. Harrow and J. Shi. "Local Embeddings of Quantum Codes," in preparation, 2013. A. W. Harrow. "Testing Entanglement

Quantum Error Correction for Minor Embedded Quantum Annealing

NASA Astrophysics Data System (ADS)

Vinci, Walter; Paz Silva, Gerardo; Mishra, Anurag; Albash, Tameem; Lidar, Daniel

2015-03-01

While quantum annealing can take advantage of the intrinsic robustness of adiabatic dynamics, some form of quantum error correction (QEC) is necessary in order to preserve its advantages over classical computation. Moreover, realistic quantum annealers are subject to a restricted connectivity between qubits. Minor embedding techniques use several physical qubits to represent a single logical qubit with a larger set of interactions, but necessarily introduce new types of errors (whenever the physical qubits corresponding to the same logical qubit disagree). We present a QEC scheme where a minor embedding is used to generate a 8 × 8 × 2 cubic connectivity out of the native one and perform experiments on a D-Wave quantum annealer. Using a combination of optimized encoding and decoding techniques, our scheme enables the D-Wave device to solve minor embedded hard instances at least as well as it would on a native implementation. Our work is a proof-of-concept that minor embedding can be advantageously implemented in order to increase both the robustness and the connectivity of a programmable quantum annealer. Applied in conjunction with decoding techniques, this paves the way toward scalable quantum annealing with applications to hard optimization problems.

Probing hydrogen bond networks in half-sandwich Ru(II) building blocks by a combined 1H DQ CRAMPS solid-state NMR, XRPD, and DFT approach.

PubMed

Chierotti, Michele R; Gobetto, Roberto; Nervi, Carlo; Bacchi, Alessia; Pelagatti, Paolo; Colombo, Valentina; Sironi, Angelo

2014-01-06

The hydrogen bond network of three polymorphs (1α, 1β, and 1γ) and one solvate form (1·H2O) arising from the hydration-dehydration process of the Ru(II) complex [(p-cymene)Ru(κN-INA)Cl2] (where INA is isonicotinic acid), has been ascertained by means of one-dimensional (1D) and two-dimensional (2D) double quantum (1)H CRAMPS (Combined Rotation and Multiple Pulses Sequences) and (13)C CPMAS solid-state NMR experiments. The resolution improvement provided by homonuclear decoupling pulse sequences, with respect to fast MAS experiments, has been highlighted. The solid-state structure of 1γ has been fully characterized by combining X-ray powder diffraction (XRPD), solid-state NMR, and periodic plane-wave first-principles calculations. None of the forms show the expected supramolecular cyclic dimerization of the carboxylic functions of INA, because of the presence of Cl atoms as strong hydrogen bond (HB) acceptors. The hydration-dehydration process of the complex has been discussed in terms of structure and HB rearrangements.

Optical Rabi Oscillations in a Quantum Dot Ensemble

NASA Astrophysics Data System (ADS)

Kujiraoka, Mamiko; Ishi-Hayase, Junko; Akahane, Kouichi; Yamamoto, Naokatsu; Ema, Kazuhiro; Sasaki, Masahide

2010-09-01

We have investigated Rabi oscillations of exciton polarization in a self-assembled InAs quantum dot ensemble. The four-wave mixing signals measured as a function of the average of the pulse area showed the large in-plane anisotropy and nonharmonic oscillations. The experimental results can be well reproduced by a two-level model calculation including three types of inhomogeneities without any fitting parameter. The large anisotropy can be well explained by the anisotropic dipole moments. We also find that the nonharmonic behaviors partly originate from the polarization interference.

Spectroscopy of Charged Quantum Dot Molecules

NASA Astrophysics Data System (ADS)

Stinaff, E. A.; Scheibner, M.; Bracker, A. S.; Ponomarev, I. V.; Ware, M. E.; Doty, M. F.; Reinecke, T. L.; Gammon, D.; Korenev, V. L.

2006-03-01

Spins of single charges in quantum dots are attractive for many quantum information and spintronic proposals. Scalable quantum information applications require the ability to entangle and operate on multiple spins in coupled quantum dots (CQDs). To further the understanding of these systems, we present detailed spectroscopic studies of InAs CQDs with control of the discrete electron or hole charging of the system. The optical spectrum reveals a pattern of energy anticrossings and crossings in the photoluminescence as a function of applied electric field. These features can be understood as a superposition of charge and spin configurations of the two dots and represent clear signatures of quantum mechanical coupling. The molecular resonance leading to these anticrossings is achieved at different electric fields for the optically excited (trion) states and the ground (hole) states allowing for the possibility of using the excited states for optically induced coupling of the qubits.

Experimental signatures of the inverted phase in InAs/GaSb coupled quantum wells

NASA Astrophysics Data System (ADS)

Karalic, Matija; Mueller, Susanne; Mittag, Christopher; Pakrouski, Kiryl; Wu, QuanSheng; Soluyanov, Alexey A.; Troyer, Matthias; Tschirky, Thomas; Wegscheider, Werner; Ensslin, Klaus; Ihn, Thomas

2016-12-01

Transport measurements are performed on InAs/GaSb double quantum wells at zero and finite magnetic fields applied parallel and perpendicular to the quantum wells. We investigate a sample in the inverted regime where electrons and holes coexist, and compare it with another sample in the noninverted semiconducting regime. The activated behavior in conjunction with a strong suppression of the resistance peak at the charge neutrality point in a parallel magnetic field attest to the topological hybridization gap between electron and hole bands in the inverted sample. We observe an unconventional Landau level spectrum with energy gaps modulated by the magnetic field applied perpendicular to the quantum wells. This is caused by a strong spin-orbit interaction provided jointly by the InAs and the GaSb quantum wells.

Electron Spin Polarization and Detection in InAs Quantum Dots Through p-Shell Trions

DTIC Science & Technology

2010-01-08

Bracker, D. Gershoni, V. L. Korenev , S. C. Badescu, Y. Lyanda- Geller, and T. L. Reinecke, Phys. Rev. Lett. 95, 177403 2005. 16A. Babinski, M...V. L. Korenev , and I. A. Merkulov, Phys. Rev. Lett. 94, 047402 2005. 28Excitation of trion superposition states has also been considered but it has

Effect of antimony incorporation on the density, shape, and luminescence of InAs quantum dots

NASA Astrophysics Data System (ADS)

Chen, J. F.; Chiang, C. H.; Wu, Y. H.; Chang, L.; Chi, J. Y.

2008-07-01

This work investigates the surfactant effect on exposed and buried InAs quantum dots (QDs) by incorporating Sb into the QD layers with various Sb beam equivalent pressures (BEPs). Secondary ion mass spectroscopy shows the presence of Sb in the exposed and buried QD layers with the Sb intensity in the exposed layer substantially exceeding that in the buried layer. Incorporating Sb can reduce the density of the exposed QDs by more than two orders of magnitude. However, a high Sb BEP yields a surface morphology with a regular periodic structure of ellipsoid terraces. A good room-temperature photoluminescence (PL) at ˜1600 nm from the exposed QDs is observed, suggesting that the Sb incorporation probably improves the emission efficiency by reducing the surface recombination velocity at the surface of the exposed QDs. Increasing Sb BEP causes a blueshift of the emission from the exposed QDs due to a reduction in the dot height as suggested by atomic force microscopy. Increasing Sb BEP can also blueshift the ˜1300 nm emission from the buried QDs by decreasing the dot height. However, a high Sb BEP yields a quantum well-like PL feature formed by the clustering of the buried QDs into an undulated planar layer. These results indicate a marked Sb surfactant effect that can be used to control the density, shape, and luminescence of the exposed and buried QDs.

The effect of multi-intermediate bands on the behavior of an InAs1-xNx/GaAs1-ySby quantum dot solar cell

NASA Astrophysics Data System (ADS)

Aly, Abou El-Maaty M.; Nasr, A.

2015-04-01

A mathematical model of quantum dot intermediate band solar cells (QDIBSCs) is investigated using two intermediate bands (IBs). These two IBs arise from the quantum dot (QD) semiconductor material within the bandgap energy. Some parameters such as the width of the QD (WQD) and the barrier thickness or the inter-dot distances between the QDs (BT) are studied to show their influence on the performance of the QDIBSC. The time-independent Schrüdinger equation, which is solved using the Kronig-Penney model, is used to determine the position and bandwidth energies of the two IBs. In our proposed model, the cubic shape of the QDs from InAs0.9N0.1 and the barrier or host semiconductor material from GaAs0.98Sb0.02 are utilized. It is shown from the results obtained that changing the parameters WQD and BT has more influence on the bandwidth energy for the first IB, Δ1, than in the case of the second IB, Δ2. The optimum power conversion efficiencies (PCEs) of the QDIBSCs with two IBs for the model under study are 58.01% and 73.55% at 1 sun and maximum solar concentration, respectively. One can observe that, in the case of the two IBs, an improvement of the PCE is achieved.

LSB-based Steganography Using Reflected Gray Code for Color Quantum Images

NASA Astrophysics Data System (ADS)

Li, Panchi; Lu, Aiping

2018-02-01

At present, the classical least-significant-bit (LSB) based image steganography has been extended to quantum image processing. For the existing LSB-based quantum image steganography schemes, the embedding capacity is no more than 3 bits per pixel. Therefore, it is meaningful to study how to improve the embedding capacity of quantum image steganography. This work presents a novel LSB-based steganography using reflected Gray code for colored quantum images, and the embedding capacity of this scheme is up to 4 bits per pixel. In proposed scheme, the secret qubit sequence is considered as a sequence of 4-bit segments. For the four bits in each segment, the first bit is embedded in the second LSB of B channel of the cover image, and and the remaining three bits are embedded in LSB of RGB channels of each color pixel simultaneously using reflected-Gray code to determine the embedded bit from secret information. Following the transforming rule, the LSB of stego-image are not always same as the secret bits and the differences are up to almost 50%. Experimental results confirm that the proposed scheme shows good performance and outperforms the previous ones currently found in the literature in terms of embedding capacity.

Efficient Measurement of Multiparticle Entanglement with Embedding Quantum Simulator.

PubMed

Chen, Ming-Cheng; Wu, Dian; Su, Zu-En; Cai, Xin-Dong; Wang, Xi-Lin; Yang, Tao; Li, Li; Liu, Nai-Le; Lu, Chao-Yang; Pan, Jian-Wei

2016-02-19

The quantum measurement of entanglement is a demanding task in the field of quantum information. Here, we report the direct and scalable measurement of multiparticle entanglement with embedding photonic quantum simulators. In this embedding framework [R. Di Candia et al. Phys. Rev. Lett. 111, 240502 (2013)], the N-qubit entanglement, which does not associate with a physical observable directly, can be efficiently measured with only two (for even N) and six (for odd N) local measurement settings. Our experiment uses multiphoton quantum simulators to mimic dynamical concurrence and three-tangle entangled systems and to track their entanglement evolutions.

Direct detection of time-resolved Rabi oscillations in a single quantum dot via resonance fluorescence

NASA Astrophysics Data System (ADS)

Schaibley, J. R.; Burgers, A. P.; McCracken, G. A.; Steel, D. G.; Bracker, A. S.; Gammon, D.; Sham, L. J.

2013-03-01

Optical Rabi oscillations are coherent population oscillations of a two-level system coupled by an electric dipole transition when driven by a strong nearly resonant optical field. In quantum dot structures, these measurements have typically been performed as a function of the total pulse area ∫Ω0(t)dt where the pulse area varies as a function of Rabi frequency. Here, we report direct detection of the time-resolved coherent transient response of the resonance fluorescence to measure the time evolution of the optical Rabi oscillations in a single charged InAs quantum dot. We extract a decoherence rate consistent with the limit from the excited state lifetime.

Electrically pumped 1.3 microm room-temperature InAs/GaAs quantum dot lasers on Si substrates by metal-mediated wafer bonding and layer transfer.

PubMed

Tanabe, Katsuaki; Guimard, Denis; Bordel, Damien; Iwamoto, Satoshi; Arakawa, Yasuhiko

2010-05-10

An electrically pumped InAs/GaAs quantum dot laser on a Si substrate has been demonstrated. The double-hetero laser structure was grown on a GaAs substrate by metal-organic chemical vapor deposition and layer-transferred onto a Si substrate by GaAs/Si wafer bonding mediated by a 380-nm-thick Au-Ge-Ni alloy layer. This broad-area Fabry-Perot laser exhibits InAs quantum dot ground state lasing at 1.31 microm at room temperature with a threshold current density of 600 A/cm(2). (c) 2010 Optical Society of America.

Single quantum dot emission at telecom wavelengths from metamorphic InAs/InGaAs nanostructures grown on GaAs substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seravalli, L.; Trevisi, G.; Frigeri, P.

We report on the growth by molecular beam epitaxy and the study by atomic force microscopy and photoluminescence of low density metamorphic InAs/InGaAs quantum dots. subcritical InAs coverages allow to obtain 10{sup 8} cm{sup -2} dot density and metamorphic In{sub x}Ga{sub 1-x}As (x=0.15,0.30) confining layers result in emission wavelengths at 1.3 {mu}m. We discuss optimal growth parameters and demonstrate single quantum dot emission up to 1350 nm at low temperatures, by distinguishing the main exciton complexes in these nanostructures. Reported results indicate that metamorphic quantum dots could be valuable candidates as single photon sources for long wavelength telecom windows.

Detecting Spatially Localized Exciton in Self-Organized InAs/InGaAs Quantum Dot Superlattices: a Way to Improve the Photovoltaic Efficiency.

PubMed

Ezzedini, Maher; Hidouri, Tarek; Alouane, Mohamed Helmi Hadj; Sayari, Amor; Shalaan, Elsayed; Chauvin, Nicolas; Sfaxi, Larbi; Saidi, Faouzi; Al-Ghamdi, Ahmed; Bru-Chevallier, Catherine; Maaref, Hassen

2017-12-01

This paper reports on experimental and theoretical investigations of atypical temperature-dependent photoluminescence properties of multi-stacked InAs quantum dots in close proximity to InGaAs strain-relief underlying quantum well. The InAs/InGaAs/GaAs QD heterostructure was grown by solid-source molecular beam epitaxy (SS-MBE) and investigated via photoluminescence (PL), spectroscopic ellipsometry (SE), and picosecond time-resolved photoluminescence. Distinctive double-emission peaks are observed in the PL spectra of the sample. From the excitation power-dependent and temperature-dependent PL measurements, these emission peaks are associated with the ground-state transition from InAs QDs with two different size populations. Luminescence measurements were carried out as function of temperature in the range of 10-300 K by the PL technique. The low temperature PL has shown an abnormal emission which appeared at the low energy side and is attributed to the recombination through the deep levels. The PL peak energy presents an anomalous behavior as a result of the competition process between localized and delocalized carriers. We propose the localized-state ensemble model to explain the usual photoluminescence behaviors. The quantitative study shows that the quantum well continuum states act as a transit channel for the redistribution of thermally activated carriers. We have determined the localization depth and its effect on the application of the investigated heterostructure for photovoltaic cells. The model gives an overview to a possible amelioration of the InAs/InGaAs/GaAs QDs SCs properties based on the theoretical calculations.

Single quantum dot emission by nanoscale selective growth of InAs on GaAs: A bottom-up approach

DOE Office of Scientific and Technical Information (OSTI.GOV)

Patella, F.; Arciprete, F.; Placidi, E.

2008-12-08

We report on single dot microphotoluminescence ({mu}PL) emission at low temperature and low power from InAs dots grown by molecular beam epitaxy in nanoscale holes of a SiO{sub 2} mask deposited on GaAs(001). By comparing atomic force microscopy measurements with {mu}PL data, we show that the dot sizes inside the nanoholes are smaller than those of the dots nucleated on the extended GaAs surface. PL of dots spans a wide energy range depending on their size and on the thickness and composition of the InGaAs capping layer. Time-resolved PL experiments demonstrate a negligible loss of radiative recombination efficiency, proving highlymore » effective in the site-controlled dot nucleation.« less

Proximity-induced superconductivity within the InAs/GaSb edge conducting state

NASA Astrophysics Data System (ADS)

Kononov, A.; Kostarev, V. A.; Semyagin, B. R.; Preobrazhenskii, V. V.; Putyato, M. A.; Emelyanov, E. A.; Deviatov, E. V.

2017-12-01

We experimentally investigate Andreev transport through the interface between an indium superconductor and the edge of the InAs/GaSb bilayer. To cover all possible regimes of the InAs/GaSb spectrum, we study samples with 10-nm-, 12-nm-, and 14-nm-thick InAs quantum wells. For the trivial case of a direct band insulator in 10 nm samples, differential resistance demonstrates standard Andreev reflection. For InAs/GaSb structures with band inversion (12 and 14 nm samples), we observe distinct low-energy structures, which we regard as direct evidence for the proximity-induced superconductivity within the current-carrying edge state. For 14 nm InAs well samples, we additionally observe mesoscopiclike resistance fluctuations, which are subjected to threshold suppression in low magnetic fields.

Deterministic Integration of Quantum Dots into on-Chip Multimode Interference Beamsplitters Using in Situ Electron Beam Lithography.

PubMed

Schnauber, Peter; Schall, Johannes; Bounouar, Samir; Höhne, Theresa; Park, Suk-In; Ryu, Geun-Hwan; Heindel, Tobias; Burger, Sven; Song, Jin-Dong; Rodt, Sven; Reitzenstein, Stephan

2018-04-11

The development of multinode quantum optical circuits has attracted great attention in recent years. In particular, interfacing quantum-light sources, gates, and detectors on a single chip is highly desirable for the realization of large networks. In this context, fabrication techniques that enable the deterministic integration of preselected quantum-light emitters into nanophotonic elements play a key role when moving forward to circuits containing multiple emitters. Here, we present the deterministic integration of an InAs quantum dot into a 50/50 multimode interference beamsplitter via in situ electron beam lithography. We demonstrate the combined emitter-gate interface functionality by measuring triggered single-photon emission on-chip with g (2) (0) = 0.13 ± 0.02. Due to its high patterning resolution as well as spectral and spatial control, in situ electron beam lithography allows for integration of preselected quantum emitters into complex photonic systems. Being a scalable single-step approach, it paves the way toward multinode, fully integrated quantum photonic chips.

Development of Highly Ordered Heterostructured Semiconductor Nanowire Arrays for Sub-Wavelength Optical Devices

DTIC Science & Technology

2007-06-01

properties of nanowires" J. Appl. Phys 98, 094306 (2005) 9. Harry E. Ruda and Alexander Shik, "Polarization-sensitive optical properties of metallic and...34Biexcitons in parabolic quantum dots", Phys. Rev. B. 73, 125321 (2006). 11. M. Blumin, H.E. Ruda, I. Savelyev , A Shik and H. Wang, "Self-assembled InAs

Formation and evolution of multimodal size distributions of InAs/GaAs quantum dots

NASA Astrophysics Data System (ADS)

Pohl, U. W.; Pötschke, K.; Schliwa, A.; Lifshits, M. B.; Shchukin, V. A.; Jesson, D. E.; Bimberg, D.

2006-05-01

Self-organized formation and evolution of quantum dot (QD) ensembles with a multimodal size distribution is reported. Such ensembles form after fast deposition near the critical thickness during a growth interruption (GRI) prior to cap layer growth and consist of pure InAs truncated pyramids with heights varying in steps of complete InAs monolayers, thereby creating well-distinguishable sub-ensembles. Ripening during GRI manifests itself by an increase of sub-ensembles of larger QDs at the expense of sub-ensembles of smaller ones, leaving the wetting layer unchanged. The dynamics of the multimodal QD size distribution is theoretically described using a kinetic approach. Starting from a broad distribution of flat QDs, a predominantly vertical growth is found due to strain-induced barriers for nucleation of a next atomic layer on different facets. QDs having initially a shorter base length attain a smaller height, accounting for the experimentally observed sub-ensemble structure. The evolution of the distribution is described by a master equation, which accounts for growth or dissolution of the QDs by mass exchange between the QDs and the adatom sea. The numerical solution is in good agreement with the measured dynamics.

Magnetoresistance engineering and singlet/triplet switching in InAs nanowire quantum dots with ferromagnetic sidegates

NASA Astrophysics Data System (ADS)

Fábián, G.; Makk, P.; Madsen, M. H.; Nygârd, J.; Schönenberger, C.; Baumgartner, A.

2016-11-01

We present magnetoresistance (MR) experiments on an InAs nanowire quantum dot device with two ferromagnetic sidegates (FSGs) in a split-gate geometry. The wire segment can be electrically tuned to a single dot or to a double dot regime using the FSGs and a backgate. In both regimes we find a strong MR and a sharp MR switching of up to 25% at the field at which the magnetizations of the FSGs are inverted by the external field. The sign and amplitude of the MR and the MR switching can both be tuned electrically by the FSGs. In a double dot regime close to pinch-off we find two sharp transitions in the conductance, reminiscent of tunneling MR (TMR) between two ferromagnetic contacts, with one transition near zero and one at the FSG switching fields. These surprisingly rich characteristics we explain in several simple resonant tunneling models. For example, the TMR-like MR can be understood as a stray-field controlled transitions between singlet and triplet double dot states. Such local magnetic fields are the key elements in various proposals to engineer novel states of matter and may be used for testing electron spin based Bell inequalities.

InP-based type-I quantum well lasers up to 2.9 μm at 230 K in pulsed mode on a metamorphic buffer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gu, Y.; Zhang, Y. G., E-mail: ygzhang@mail.sim.ac.cn; Ma, Y. J.

This work reports on up to 2.9 μm lasing at 230 K of InP-based type-I quantum well lasers. This record long wavelength lasing is achieved by applying InP-based Sb-free structures with eight periods of strain-compensated InAs quantum wells grown on metamorphic In{sub 0.8}Al{sub 0.2}As template layers. The continuous-wave threshold current density is 797 A/cm{sup 2} and the idealized extrapolated threshold current density for infinite cavity length is as low as 58 A/cm{sup 2} per quantum well at 120 K. This scheme is a promising pathway for extending the wavelength range of type-I quantum well lasers on InP substrates.

Quantum annealing correction with minor embedding

NASA Astrophysics Data System (ADS)

Vinci, Walter; Albash, Tameem; Paz-Silva, Gerardo; Hen, Itay; Lidar, Daniel A.

2015-10-01

Quantum annealing provides a promising route for the development of quantum optimization devices, but the usefulness of such devices will be limited in part by the range of implementable problems as dictated by hardware constraints. To overcome constraints imposed by restricted connectivity between qubits, a larger set of interactions can be approximated using minor embedding techniques whereby several physical qubits are used to represent a single logical qubit. However, minor embedding introduces new types of errors due to its approximate nature. We introduce and study quantum annealing correction schemes designed to improve the performance of quantum annealers in conjunction with minor embedding, thus leading to a hybrid scheme defined over an encoded graph. We argue that this scheme can be efficiently decoded using an energy minimization technique provided the density of errors does not exceed the per-site percolation threshold of the encoded graph. We test the hybrid scheme using a D-Wave Two processor on problems for which the encoded graph is a two-level grid and the Ising model is known to be NP-hard. The problems we consider are frustrated Ising model problem instances with "planted" (a priori known) solutions. Applied in conjunction with optimized energy penalties and decoding techniques, we find that this approach enables the quantum annealer to solve minor embedded instances with significantly higher success probability than it would without error correction. Our work demonstrates that quantum annealing correction can and should be used to improve the robustness of quantum annealing not only for natively embeddable problems but also when minor embedding is used to extend the connectivity of physical devices.

Long-wavelength infrared (LWIR) quantum-dot infrared photodetector (QDIP) focal plane array

NASA Astrophysics Data System (ADS)

Gunapala, S. D.; Bandara, S. V.; Hill, C. J.; Ting, D. Z.; Liu, J. K.; Rafol, S. B.; Blazejewski, E. R.; Mumolo, J. M.; Keo, S. A.; Krishna, S.; Chang, Y. C.; Shott, C. A.

2006-05-01

We have exploited the artificial atomlike properties of epitaxially self-assembled quantum dots for the development of high operating temperature long wavelength infrared (LWIR) focal plane arrays. Quantum dots are nanometer-scale islands that form spontaneously on a semiconductor substrate due to lattice mismatch. QDIPs are expected to outperform quantum well infrared detectors (QWIPs) and are expected to offer significant advantages over II-VI material based focal plane arrays. QDIPs are fabricated using robust wide bandgap III-V materials which are well suited to the production of highly uniform LWIR arrays. We have used molecular beam epitaxy (MBE) technology to grow multi-layer LWIR quantum dot structures based on the InAs/InGaAs/GaAs material system. JPL is building on its significant QWIP experience and is basically building a Dot-in-the-Well (DWELL) device design by embedding InAs quantum dots in a QWIP structure. This hybrid quantum dot/quantum well device offers additional control in wavelength tuning via control of dot-size and/or quantum well sizes. In addition the quantum wells can trap electrons and aide in ground state refilling. Recent measurements have shown a 10 times higher photoconductive gain than the typical QWIP device, which indirectly confirms the lower relaxation rate of excited electrons (photon bottleneck) in QDIPs. Subsequent material and device improvements have demonstrated an absorption quantum efficiency (QE) of ~ 3%. Dot-in-the-well (DWELL) QDIPs were also experimentally shown to absorb both 45o and normally incident light. Thus we have employed a reflection grating structure to further enhance the quantum efficiency. JPL has demonstrated wavelength control by progressively growing material and fabricating devices structures that have continuously increased in LWIR response. The most recent devices exhibit peak responsivity out to 8.1 microns. Peak detectivity of the 8.1μm devices has reached ~ 1 x 1010 Jones at 77 K. Furthermore, we have fabricated the first long-wavelength 640x512 pixels QDIP focal plane array. This QDIP focal plane array has produced excellent infrared imagery with noise equivalent temperature difference of 40 mK at 60K operating temperature. In addition, we have managed to increase the quantum efficiency of these devices from 0.1% (according to the data published in literature) to 20% in discrete devices. This is a factor of 200 increase in quantum efficiency. With these excellent results, for the first time QDIP performance has surpassed the QWIP performance. Our goal is to operate these long-wavelength detectors at much higher operating temperature than 77K, which can be passively achieved in space. This will be a huge leap in high performance infrared detectors specifically applicable to space science instruments.

Long-Wavelength Infrared (LWIR) Quantum Dot Infrared Photodetector (QDIP) Focal Plane Array

NASA Technical Reports Server (NTRS)

Gunapala, Sarath D.; Bandara, S. V.; Liu, J. K.; Hill, C. J.; Rafol, S. B.; Mumolo, J. M.; Shott, C. A.

2006-01-01

We have exploited the artificial atomlike properties of epitaxially self-assembled quantum dots for the development of high operating temperature long wavelength infrared (LWIR) focal plane arrays. Quantum dots are nanometer-scale islands that form spontaneously on a semiconductor substrate due to lattice mismatch. QDIPs are expected to outperform quantum well infrared detectors (QWIPs) and are expected to offer significant advantages over II-VI material based focal plane arrays. QDIPs are fabricated using robust wide bandgap III-V materials which are well suited to the production of highly uniform LWIR arrays. We have used molecular beam epitaxy (MBE) technology to grow multi-layer LWIR quantum dot structures based on the InAs/InGaAs/GaAs material system. JPL is building on its significant QWIP experience and is basically building a Dot-in-the-Well (DWELL) device design by embedding InAs quantum dots in a QWIP structure. This hybrid quantum dot/quantum well device offers additional control in wavelength tuning via control of dot-size and/or quantum well sizes. In addition the quantum wells can trap electrons and aide in ground state refilling. Recent measurements have shown a 10 times higher photoconductive gain than the typical QWIP device, which indirectly confirms the lower relaxation rate of excited electrons (photon bottleneck) in QDPs. Subsequent material and device improvements have demonstrated an absorption quantum efficiency (QE) of approx. 3%. Dot-in-the-well (DWELL) QDIPs were also experimentally shown to absorb both 45 deg. and normally incident light. Thus we have employed a reflection grating structure to further enhance the quantum efficiency. JPL has demonstrated wavelength control by progressively growing material and fabricating devices structures that have continuously increased in LWIR response. The most recent devices exhibit peak responsivity out to 8.1 microns. Peak detectivity of the 8.1 micrometer devices has reached approx. 1 x 10(exp 10) Jones at 77 K. Furthermore, we have fabricated the first long-wavelength 640x512 pixels QDP focal plane array. This QDIP focal plane may has produced excellent infrared imagery with noise equivalent temperature difference of 40 mK at 60K operating temperature. In addition, we have managed to increase the quantum efficiency of these devices from 0.1% (according to the data published in literature) to 20% in discrete devices. This is a factor of 200 increase in quantum efficiency. With these excellent results, for the first time QDIP performance has surpassed the QWIP performance. Our goal is to operate these long-wavelength detectors at much higher operating temperature than 77K which can be passively achieved in space. This will be a huge leap in high performance infrared detectors specifically applicable to space science instruments.

Impact of N on the atomic-scale Sb distribution in quaternary GaAsSbN-capped InAs quantum dots

PubMed Central

2012-01-01

The use of GaAsSbN capping layers on InAs/GaAs quantum dots (QDs) has recently been proposed for micro- and optoelectronic applications for their ability to independently tailor electron and hole confinement potentials. However, there is a lack of knowledge about the structural and compositional changes associated with the process of simultaneous Sb and N incorporation. In the present work, we have characterized using transmission electron microscopy techniques the effects of adding N in the GaAsSb/InAs/GaAs QD system. Firstly, strain maps of the regions away from the InAs QDs had revealed a huge reduction of the strain fields with the N incorporation but a higher inhomogeneity, which points to a composition modulation enhancement with the presence of Sb-rich and Sb-poor regions in the range of a few nanometers. On the other hand, the average strain in the QDs and surroundings is also similar in both cases. It could be explained by the accumulation of Sb above the QDs, compensating the tensile strain induced by the N incorporation together with an In-Ga intermixing inhibition. Indeed, compositional maps of column resolution from aberration-corrected Z-contrast images confirmed that the addition of N enhances the preferential deposition of Sb above the InAs QD, giving rise to an undulation of the growth front. As an outcome, the strong redshift in the photoluminescence spectrum of the GaAsSbN sample cannot be attributed only to the N-related reduction of the conduction band offset but also to an enhancement of the effect of Sb on the QD band structure. PMID:23181950

Fabrication and characterization of multi-layer InAs/InGaAs quantum dot p-i-n GaAs solar cells grown on silicon substrates

NASA Astrophysics Data System (ADS)

Omri, M.; Sayari, A.; Sfaxi, L.

2018-01-01

This paper reports on InAs/InGaAs quantum dot solar cells (QDSCs) deposited by molecular beam epitaxy (MBE) on (001) n-type silicon ( n-Si) substrates. In-situ RHEED measurements show that InAs/InGaAs QDs SC has a high crystalline structure. The dislocation density in the active layer of the InAs/InGaAs QDSC and the lattice mismatch in the GaAs layer can be reduced by using an Si rough surface buffer layer (RSi). To show the effect of the QD layers, a reference SC with the same p-i-n structure as the InAs/InGaAs QDSC, but without InAs QDs, is also grown. The two SCs were studied by sepectroscopic ellipsometry (SE), in the 1-6 eV photon energy range, photoluminescence and photocurrent measurements. The optical constants of the two devices are determined in the photon energy range 1-6 eV from the SE data. The dominant features in the dielectric function spectra at 3 and 4.5 eV are attributed, respectively, to the E 1 and E 2 critical point structures of GaAs and InAs. The low-temperature photoluminescence spectrum of the InAs/InGaAs QDSC shows ground-state emissions, respectively, from the relatively small QDs near 1081 nm and from the large QDs near 1126 nm. Photocurrent measurements confirm the improved absorption performance (up to 1200 nm) of the InAs QDs SC which is ascribed to the optical absorption from the InAs/InGaAs QDs and the Si substrate as demonstrated by SE and photoluminescence measurements.

Quantum Watermarking Scheme Based on INEQR

NASA Astrophysics Data System (ADS)

Zhou, Ri-Gui; Zhou, Yang; Zhu, Changming; Wei, Lai; Zhang, Xiafen; Ian, Hou

2018-04-01

Quantum watermarking technology protects copyright by embedding invisible quantum signal in quantum multimedia data. In this paper, a watermarking scheme based on INEQR was presented. Firstly, the watermark image is extended to achieve the requirement of embedding carrier image. Secondly, the swap and XOR operation is used on the processed pixels. Since there is only one bit per pixel, XOR operation can achieve the effect of simple encryption. Thirdly, both the watermark image extraction and embedding operations are described, where the key image, swap operation and LSB algorithm are used. When the embedding is made, the binary image key is changed. It means that the watermark has been embedded. Of course, if the watermark image is extracted, the key's state need detected. When key's state is |1>, this extraction operation is carried out. Finally, for validation of the proposed scheme, both the Signal-to-noise ratio (PSNR) and the security of the scheme are analyzed.

Quantum-dot spin-photon entanglement via frequency downconversion to telecom wavelength.

PubMed

De Greve, Kristiaan; Yu, Leo; McMahon, Peter L; Pelc, Jason S; Natarajan, Chandra M; Kim, Na Young; Abe, Eisuke; Maier, Sebastian; Schneider, Christian; Kamp, Martin; Höfling, Sven; Hadfield, Robert H; Forchel, Alfred; Fejer, M M; Yamamoto, Yoshihisa

2012-11-15

Long-distance quantum teleportation and quantum repeater technologies require entanglement between a single matter quantum bit (qubit) and a telecommunications (telecom)-wavelength photonic qubit. Electron spins in III-V semiconductor quantum dots are among the matter qubits that allow for the fastest spin manipulation and photon emission, but entanglement between a single quantum-dot spin qubit and a flying (propagating) photonic qubit has yet to be demonstrated. Moreover, many quantum dots emit single photons at visible to near-infrared wavelengths, where silica fibre losses are so high that long-distance quantum communication protocols become difficult to implement. Here we demonstrate entanglement between an InAs quantum-dot electron spin qubit and a photonic qubit, by frequency downconversion of a spontaneously emitted photon from a singly charged quantum dot to a wavelength of 1,560 nanometres. The use of sub-10-picosecond pulses at a wavelength of 2.2 micrometres in the frequency downconversion process provides the necessary quantum erasure to eliminate which-path information in the photon energy. Together with previously demonstrated indistinguishable single-photon emission at high repetition rates, the present technique advances the III-V semiconductor quantum-dot spin system as a promising platform for long-distance quantum communication.

Adiabatic Edge Channel Transport in a Nanowire Quantum Point Contact Register.

PubMed

Heedt, S; Manolescu, A; Nemnes, G A; Prost, W; Schubert, J; Grützmacher, D; Schäpers, Th

2016-07-13

We report on a prototype device geometry where a number of quantum point contacts are connected in series in a single quasi-ballistic InAs nanowire. At finite magnetic field the backscattering length is increased up to the micron-scale and the quantum point contacts are connected adiabatically. Hence, several input gates can control the outcome of a ballistic logic operation. The absence of backscattering is explained in terms of selective population of spatially separated edge channels. Evidence is provided by regular Aharonov-Bohm-type conductance oscillations in transverse magnetic fields, in agreement with magnetoconductance calculations. The observation of the Shubnikov-de Haas effect at large magnetic fields corroborates the existence of spatially separated edge channels and provides a new means for nanowire characterization.

Suppression of Zeeman gradients by nuclear polarization in double quantum dots.

PubMed

Frolov, S M; Danon, J; Nadj-Perge, S; Zuo, K; van Tilburg, J W W; Pribiag, V S; van den Berg, J W G; Bakkers, E P A M; Kouwenhoven, L P

2012-12-07

We use electric dipole spin resonance to measure dynamic nuclear polarization in InAs nanowire quantum dots. The resonance shifts in frequency when the system transitions between metastable high and low current states, indicating the presence of nuclear polarization. We propose that the low and the high current states correspond to different total Zeeman energy gradients between the two quantum dots. In the low current state, dynamic nuclear polarization efficiently compensates the Zeeman gradient due to the g-factor mismatch, resulting in a suppressed total Zeeman gradient. We present a theoretical model of electron-nuclear feedback that demonstrates a fixed point in nuclear polarization for nearly equal Zeeman splittings in the two dots and predicts a narrowed hyperfine gradient distribution.

Towards Scalable Entangled Photon Sources with Self-Assembled InAs /GaAs Quantum Dots

NASA Astrophysics Data System (ADS)

Wang, Jianping; Gong, Ming; Guo, G.-C.; He, Lixin

2015-08-01

The biexciton cascade process in self-assembled quantum dots (QDs) provides an ideal system for realizing deterministic entangled photon-pair sources, which are essential to quantum information science. The entangled photon pairs have recently been generated in experiments after eliminating the fine-structure splitting (FSS) of excitons using a number of different methods. Thus far, however, QD-based sources of entangled photons have not been scalable because the wavelengths of QDs differ from dot to dot. Here, we propose a wavelength-tunable entangled photon emitter mounted on a three-dimensional stressor, in which the FSS and exciton energy can be tuned independently, thereby enabling photon entanglement between dissimilar QDs. We confirm these results via atomistic pseudopotential calculations. This provides a first step towards future realization of scalable entangled photon generators for quantum information applications.

Coherent control with optical pulses for deterministic spin-photon entanglement

NASA Astrophysics Data System (ADS)

Truex, Katherine; Webster, L. A.; Duan, L.-M.; Sham, L. J.; Steel, D. G.

2013-11-01

We present a procedure for the optical coherent control of quantum bits within a quantum dot spin-exciton system, as a preliminary step to implementing a proposal by Yao, Liu, and Sham [Phys. Rev. Lett.PRLTAO0031-900710.1103/PhysRevLett.95.030504 95, 030504 (2005)] for deterministic spin-photon entanglement. The experiment proposed here utilizes a series of picosecond optical pulses from a single laser to coherently control a single self-assembled quantum dot in a magnetic field, creating the precursor state in 25 ps with a predicted fidelity of 0.991. If allowed to decay in an appropriate cavity, the ideal precursor superposition state would create maximum spin-photon entanglement. Numerical simulations using values typical of InAs quantum dots give a predicted entropy of entanglement of 0.929, largely limited by radiative decay and electron spin flips.

Fabrication of (In,Ga)As quantum-dot chains on GaAs(100)

NASA Astrophysics Data System (ADS)

Wang, Z. M.; Holmes, K.; Mazur, Yu. I.; Salamo, G. J.

2004-03-01

Nanostructure evolution during the growth of multilayers of In0.5Ga0.5As/GaAs (100) by molecular-beam epitaxy is investigated to control the formation of lines of quantum dots called quantum-dot chains. It is found that the dot chains can be substantially increased in length by the introduction of growth interruptions during the initial stages of growth of the GaAs spacer layer. Quantum-dot chains that are longer than 5 μm are obtained by adjusting the In0.5Ga0.5As coverage and growth interruptions. The growth procedure is also used to create a template to form InAs dots into chains with a predictable dot density. The resulting dot chains offer the possibility to engineer carrier interaction among dots for novel physical phenomena and potential devices.

Coherent Transport in a Linear Triple Quantum Dot Made from a Pure-Phase InAs Nanowire.

PubMed

Wang, Ji-Yin; Huang, Shaoyun; Huang, Guang-Yao; Pan, Dong; Zhao, Jianhua; Xu, H Q

2017-07-12

A highly tunable linear triple quantum dot (TQD) device is realized in a single-crystalline pure-phase InAs nanowire using a local finger gate technique. The electrical measurements show that the charge stability diagram of the TQD can be represented by three kinds of current lines of different slopes and a simulation performed based on a capacitance matrix model confirms the experiment. We show that each current line observable in the charge stability diagram is associated with a case where a QD is on resonance with the Fermi level of the source and drain reservoirs. At a triple point where two current lines of different slopes move together but show anticrossing, two QDs are on resonance with the Fermi level of the reservoirs. We demonstrate that an energetically degenerated quadruple point at which all three QDs are on resonance with the Fermi level of the reservoirs can be built by moving two separated triple points together via sophistically tuning of energy levels in the three QDs. We also demonstrate the achievement of direct coherent electron transfer between the two remote QDs in the TQD, realizing a long-distance coherent quantum bus operation. Such a long-distance coherent coupling could be used to investigate coherent spin teleportation and superexchange effects and to construct a spin qubit with an improved long coherent time and with spin state detection solely by sensing the charge states.

Shape effects on the electronic structure and the optical gain of InAsN/GaAs nanostructures: From a quantum lens to a quantum ring

NASA Astrophysics Data System (ADS)

Chen, J.; Fan, W. J.; Xu, Q.; Zhang, X. W.; Li, S. S.; Xia, J. B.

2012-10-01

The electronic structures of self-assembled InAs1-xNx/GaAs nanostructures from quantum lens to quantum rings (QRs) are calculated using the 10-band k.p method and the valence force field (VFF) method. With the variation of shape of the nanostructure and nitrogen (N) content, it shows that the N and the strains can significantly affect the energy levels especially the conduction band because the N resonant state has repulsion interaction with the conduction band due to the band anticrossing (BAC). The structures with N and greater height have smaller transition energy, and the structures with N have greater optical gain due to its overwhelming greater value of factor f+f-1. After analyzing the shape effect, we suggested that the nanostructures with volcano shape are preferred because the maximum optical gain occurs for quantum volcano. With our simulation result, researchers could select quantum dots (QDs) structures to design laser with better performance.

Magneto-optical studies of quantum dots

NASA Astrophysics Data System (ADS)

Russ, Andreas Hans

Significant effort in condensed matter physics has recently been devoted to the field of "spintronics" which seeks to utilize the spin degree of freedom of electrons. Unlike conventional electronics that rely on the electron charge, devices exploiting their spin have the potential to yield new and novel technological applications, including spin transistors, spin filters, and spin-based memory devices. Any such application has the following essential requirements: 1) Efficient electrical injection of spin-polarized carriers; 2) Long spin lifetimes; 3) Ability to control and manipulate electron spins; 4) Effective detection of spin-polarized carriers. Recent work has demonstrated efficient electrical injection from ferromagnetic contacts such as Fe and MnAs, utilizing a spin-Light Emitting Diode (spin-LED) as a method of detection. Semiconductor quantum dots (QDs) are attractive candidates for satisfying requirements 2 and 3 as their zero dimensionality significantly suppresses many spin-flip mechanisms leading to long spin coherence times, as well as enabling the localization and manipulation of a controlled number of electrons and holes. This thesis is composed of three projects that are all based on the optical properties of QD structures including: I) Intershell exchange between spin-polarized electrons occupying adjacent shells in InAs QDs; II) Spin-polarized multiexitons in InAs QDs in the presence of spin-orbit interactions; III) The optical Aharonov-Bohm effect in AlxGa1-xAs/AlyGa1-yAs quantum wells (QWs). In the following we introduce some of the basic optical properties of quantum dots, describe the main tool (spin-LED) employed in this thesis to inject and detect spins in these QDs, and conclude with the optical Aharonov-Bohm effect (OAB) in type-II QDs.

Quantum-Dot Laser for Wavelengths of 1.8 to 2.3 micron

NASA Technical Reports Server (NTRS)

Qiu, Yueming

2006-01-01

The figure depicts a proposed semiconductor laser, based on In(As)Sb quantum dots on a (001) InP substrate, that would operate in the wavelength range between 1.8 and 2.3 m. InSb and InAsSb are the smallest-bandgap conventional III-V semiconductor materials, and the present proposal is an attempt to exploit the small bandgaps by using InSb and InAsSb nanostructures as midinfrared emitters. The most closely related prior III-V semiconductor lasers are based, variously, on strained InGaAs quantum wells and InAs quantum dots on InP substrates. The emission wavelengths of these prior devices are limited to about 2.1 m because of critical quantum-well thickness limitations for these lattice mismatched material systems. The major obstacle to realizing the proposed laser is the difficulty of fabricating InSb quantum dots in sufficient density on an InP substrate. This difficulty arises partly because of the weakness of the bond between In and Sb and partly because of the high temperature needed to crack metalorganic precursor compounds during the vapor-phase epitaxy used to grow quantum dots: The mobility of the weakly bound In at the high growth temperature is so high that In adatoms migrate easily on the growth surface, resulting in the formation of large InSb islands at a density, usually less than 5 x 10(exp 9) cm(exp -2), that is too low for laser operation. The mobility of the In adatoms could be reduced by introducing As atoms to the growth surface because the In-As bond is about 30 percent stronger than is the In-Sb bond. The fabrication of the proposed laser would include a recently demonstrated process that involves the use of alternative supplies of precursors to separate group-III and group-V species to establish local non-equilibrium process conditions, so that In(As)Sb quantum dots assemble themselves on a (001) InP substrate at a density as high as 4 x 10(exp 10) cm(exp -2). Room-temperature photoluminescence spectra of quantum dots formed by this process indicate that they emit at wavelengths from 1.7 to 2.3 microns.

All MBE grown InAs/GaAs quantum dot lasers on on-axis Si (001).

PubMed

Kwoen, Jinkwan; Jang, Bongyong; Lee, Joohang; Kageyama, Takeo; Watanabe, Katsuyuki; Arakawa, Yasuhiko

2018-04-30

Directly grown III-V quantum dot (QD) laser on on-axis Si (001) is a good candidate for achieving monolithically integrated Si photonics light source. Nowadays, laser structures containing high quality InAs / GaAs QD are generally grown by molecular beam epitaxy (MBE). However, the buffer layer between the on-axis Si (001) substrate and the laser structure are usually grown by metal-organic chemical vapor deposition (MOCVD). In this paper, we demonstrate all MBE grown high-quality InAs/GaAs QD lasers on on-axis Si (001) substrates without using patterning and intermediate layers of foreign material.

Intermediate-band photosensitive device with quantum dots having tunneling barrier embedded in organic matrix

DOEpatents

Forrest, Stephen R.

2008-08-19

A plurality of quantum dots each have a shell. The quantum dots are embedded in an organic matrix. At least the quantum dots and the organic matrix are photoconductive semiconductors. The shell of each quantum dot is arranged as a tunneling barrier to require a charge carrier (an electron or a hole) at a base of the tunneling barrier in the organic matrix to perform quantum mechanical tunneling to reach the respective quantum dot. A first quantum state in each quantum dot is between a lowest unoccupied molecular orbital (LUMO) and a highest occupied molecular orbital (HOMO) of the organic matrix. Wave functions of the first quantum state of the plurality of quantum dots may overlap to form an intermediate band.

Deterministic Integration of Quantum Dots into on-Chip Multimode Interference Beamsplitters Using in Situ Electron Beam Lithography

NASA Astrophysics Data System (ADS)

Schnauber, Peter; Schall, Johannes; Bounouar, Samir; Höhne, Theresa; Park, Suk-In; Ryu, Geun-Hwan; Heindel, Tobias; Burger, Sven; Song, Jin-Dong; Rodt, Sven; Reitzenstein, Stephan

2018-04-01

The development of multi-node quantum optical circuits has attracted great attention in recent years. In particular, interfacing quantum-light sources, gates and detectors on a single chip is highly desirable for the realization of large networks. In this context, fabrication techniques that enable the deterministic integration of pre-selected quantum-light emitters into nanophotonic elements play a key role when moving forward to circuits containing multiple emitters. Here, we present the deterministic integration of an InAs quantum dot into a 50/50 multi-mode interference beamsplitter via in-situ electron beam lithography. We demonstrate the combined emitter-gate interface functionality by measuring triggered single-photon emission on-chip with $g^{(2)}(0) = 0.13\\pm 0.02$. Due to its high patterning resolution as well as spectral and spatial control, in-situ electron beam lithography allows for integration of pre-selected quantum emitters into complex photonic systems. Being a scalable single-step approach, it paves the way towards multi-node, fully integrated quantum photonic chips.

A Surface Plasmon Enhanced Infrared Photodetector Based on InAs Quantum Dots

DTIC Science & Technology

2010-01-01

mance of QD infrared detector to a level that is compatible to the widely used, conventional MCT infrared detector . Acknowledgment. S.Y.L. gratefully...amenable to large scale fabrication and, more importantly, does not degrade the noise current characteristics of the photodetector. We believe that this...demonstration would bring the performance of QD-based infrared detectors to a level suitable for emerging surveillance and medical diagnostic

Nuclear Spin Locking and Extended Two-Electron Spin Decoherence Time in an InAs Quantum Dot Molecule

NASA Astrophysics Data System (ADS)

Chow, Colin; Ross, Aaron; Steel, Duncan; Sham, L. J.; Bracker, Allan; Gammon, Daniel

2015-03-01

The spin eigenstates for two electrons confined in a self-assembled InAs quantum dot molecule (QDM) consist of the spin singlet state, S, with J = 0 and the triplet states T-, T0 and T+, with J = 1. When a transverse magnetic field (Voigt geometry) is applied, the two-electron system can be initialized to the different states with appropriate laser excitation. Under the excitation of a weak probe laser, non-Lorentzian lineshapes are obtained when the system is initialized to either T- or T+, where T- results in a ``resonance locking'' lineshape while T+ gives a ``resonance avoiding '' lineshape: two different manifestations of hysteresis showing the importance of memory in the system. These observations signify dynamic nuclear spin polarization (DNSP) arising from a feedback mechanism involving hyperfine interaction between lattice nuclei and delocalized electron spins, and Overhauser shift due to nuclear spin polarization. Using pump configurations that generate coherent population trapping, the isolation of the electron spin from the optical excitation shows the stabilization of the nuclear spin ensemble. The dark-state lineshape measures the lengthened electron spin decoherence time, from 1 ns to 1 μs. Our detailed spectra highlight the potential of QDM for realizing a two-qubit gate. This work is supported by NSF, ARO, AFOSR, DARPA, and ONR.

Doping-Induced Interband Gain in InAs/AlSb Quantum Wells

NASA Technical Reports Server (NTRS)

Kolokolov, K. I.; Ning, C. Z.

2005-01-01

A paper describes a computational study of effects of doping in a quantum well (QW) comprising a 10-nm-thick layer of InAs sandwiched between two 21-nm-thick AlSb layers. Heretofore, InAs/AlSb QWs have not been useful as interband gain devices because they have type-II energy-band-edge alignment, which causes spatial separation of electrons and holes, thereby leading to weak interband dipole matrix elements. In the doping schemes studied, an interior sublayer of each AlSb layer was doped at various total areal densities up to 5 X 10(exp 12) / square cm. It was found that (1) proper doping converts the InAs layer from a barrier to a well for holes, thereby converting the heterostructure from type II to type I; (2) the resultant dipole matrix elements and interband gains are comparable to those of typical type-I heterostructures; and (3) dipole moments and optical gain increase with the doping level. Optical gains in the transverse magnetic mode can be almost ten times those of other semiconductor material systems in devices used to generate medium-wavelength infrared (MWIR) radiation. Hence, doped InAs/AlSb QWs could be the basis of an alternative material system for devices to generate MWIR radiation.

InAs-based interband-cascade-lasers emitting around 7 μm with threshold current densities below 1 kA/cm{sup 2} at room temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dallner, Matthias; Hau, Florian; Kamp, Martin

2015-01-26

Interband cascade lasers (ICLs) grown on InAs substrates with threshold current densities below 1 kA/cm{sup 2} are presented. Two cascade designs with different lengths of the electron injector were investigated. Using a cascade design with 3 InAs quantum wells (QWs) in the electron injector, a device incorporating 22 stages in the active region exhibited a threshold current density of 940 A/cm{sup 2} at a record wavelength of 7 μm for ICLs operating in pulsed mode at room temperature. By investigating the influence of the number of stages on the device performance for a cascade design with 2 QWs in the electron injector, amore » further reduction of the threshold current density to 800 A/cm{sup 2} was achieved for a 30 stage device.« less

Magnetically-driven colossal supercurrent enhancement in InAs nanowire Josephson junctions

PubMed Central

Tiira, J.; Strambini, E.; Amado, M.; Roddaro, S.; San-Jose, P.; Aguado, R.; Bergeret, F. S.; Ercolani, D.; Sorba, L.; Giazotto, F.

2017-01-01

The Josephson effect is a fundamental quantum phenomenon where a dissipationless supercurrent is introduced in a weak link between two superconducting electrodes by Andreev reflections. The physical details and topology of the junction drastically modify the properties of the supercurrent and a strong enhancement of the critical supercurrent is expected to occur when the topology of the junction allows an emergence of Majorana bound states. Here we report charge transport measurements in mesoscopic Josephson junctions formed by InAs nanowires and Ti/Al superconducting leads. Our main observation is a colossal enhancement of the critical supercurrent induced by an external magnetic field applied perpendicular to the substrate. This striking and anomalous supercurrent enhancement cannot be described by any known conventional phenomenon of Josephson junctions. We consider these results in the context of topological superconductivity, and show that the observed critical supercurrent enhancement is compatible with a magnetic field-induced topological transition. PMID:28401951

Dot-in-Well Quantum-Dot Infrared Photodetectors

NASA Technical Reports Server (NTRS)

Gunapala, Sarath; Bandara, Sumith; Ting, David; Hill, cory; Liu, John; Mumolo, Jason; Chang, Yia Chung

2008-01-01

Dot-in-well (DWELL) quantum-dot infrared photodetectors (QDIPs) [DWELL-QDIPs] are subjects of research as potentially superior alternatives to prior QDIPs. Heretofore, there has not existed a reliable method for fabricating quantum dots (QDs) having precise, repeatable dimensions. This lack has constituted an obstacle to the development of uniform, high-performance, wavelength-tailorable QDIPs and of focal-plane arrays (FPAs) of such QDIPs. However, techniques for fabricating quantum-well infrared photodetectors (QWIPs) having multiple-quantum- well (MQW) structures are now well established. In the present research on DWELL-QDIPs, the arts of fabrication of QDs and QWIPs are combined with a view toward overcoming the deficiencies of prior QDIPs. The longer-term goal is to develop focal-plane arrays of radiationhard, highly uniform arrays of QDIPs that would exhibit high performance at wavelengths from 8 to 15 m when operated at temperatures between 150 and 200 K. Increasing quantum efficiency is the key to the development of competitive QDIP-based FPAs. Quantum efficiency can be increased by increasing the density of QDs and by enhancing infrared absorption in QD-containing material. QDIPs demonstrated thus far have consisted, variously, of InAs islands on GaAs or InAs islands in InGaAs/GaAs wells. These QDIPs have exhibited low quantum efficiencies because the numbers of QD layers (and, hence, the areal densities of QDs) have been small typically five layers in each QDIP. The number of QD layers in such a device must be thus limited to prevent the aggregation of strain in the InAs/InGaAs/GaAs non-lattice- matched material system. The approach being followed in the DWELL-QDIP research is to embed In- GaAs QDs in GaAs/AlGaAs multi-quantum- well (MQW) structures (see figure). This material system can accommodate a large number of QD layers without excessive lattice-mismatch strain and the associated degradation of photodetection properties. Hence, this material system is expected to enable achievement of greater densities of QDs and correspondingly greater quantum efficiencies. The host GaAs/AlGaAs MQW structures are highly compatible with mature fabrication processes that are now used routinely in making QWIP FPAs. The hybrid InGaAs-dot/GaAs/AlGaAs-well system also offers design advantages in that the effects of variability of dot size can be partly compensated by engineering quantum-well sizes, which can be controlled precisely.

A stable wavelength-tunable triggered source of single photons and cascaded photon pairs at the telecom C-band

NASA Astrophysics Data System (ADS)

Zeuner, Katharina D.; Paul, Matthias; Lettner, Thomas; Reuterskiöld Hedlund, Carl; Schweickert, Lucas; Steinhauer, Stephan; Yang, Lily; Zichi, Julien; Hammar, Mattias; Jöns, Klaus D.; Zwiller, Val

2018-04-01

The implementation of fiber-based long-range quantum communication requires tunable sources of single photons at the telecom C-band. Stable and easy-to-implement wavelength-tunability of individual sources is crucial to (i) bring remote sources into resonance, (ii) define a wavelength standard, and (iii) ensure scalability to operate a quantum repeater. So far, the most promising sources for true, telecom single photons are semiconductor quantum dots, due to their ability to deterministically and reliably emit single and entangled photons. However, the required wavelength-tunability is hard to attain. Here, we show a stable wavelength-tunable quantum light source by integrating strain-released InAs quantum dots on piezoelectric substrates. We present triggered single-photon emission at 1.55 μm with a multi-photon emission probability as low as 0.097, as well as photon pair emission from the radiative biexciton-exciton cascade. We achieve a tuning range of 0.25 nm which will allow us to spectrally overlap remote quantum dots or tuning distant quantum dots into resonance with quantum memories. This opens up realistic avenues for the implementation of photonic quantum information processing applications at telecom wavelengths.

Nanoheterostructures with CdTe/ZnMgSeTe Quantum Dots for Single-Photon Emitters Grown by Molecular Beam Epitaxy

NASA Astrophysics Data System (ADS)

Sorokin, S. V.; Sedova, I. V.; Belyaev, K. G.; Rakhlin, M. V.; Yagovkina, M. A.; Toropov, A. A.; Ivanov, S. V.

2018-03-01

Data on the molecular beam epitaxy (MBE) technology, design, and luminescent properties of heterostructures with CdTe/Zn(Mg)(Se)Te quantum dots on InAs(001) substrates are presented. X-ray diffraction has been used to study short-period ZnTe/MgTe/MgSe superlattices used as wide-bandgap barriers in structures with CdTe/ZnTe quantum dots for the effective confinement of holes. It is shown that the design of these superlattices must take into account the replacement of Te atoms by selenium on MgSe/ZnTe and MgTe/MgSe heterointerfaces. Heterostructures with CdTe/Zn(Mg)(Se)Te quantum dots exhibit photoluminescence at temperatures up to 300 K. The spectra of microphotoluminescence at T = 10 K display a set of emission lines from separate CdTe/ZnTe quantum dots, the surface density of which is estimated at 1010 cm-2.

Effects of Shape and Strain Distribution of Quantum Dots on Optical Transition in the Quantum Dot Infrared Photodetectors

PubMed Central

2008-01-01

We present a systemic theoretical study of the electronic properties of the quantum dots inserted in quantum dot infrared photodetectors (QDIPs). The strain distribution of three different shaped quantum dots (QDs) with a same ratio of the base to the vertical aspect is calculated by using the short-range valence-force-field (VFF) approach. The calculated results show that the hydrostatic strain ɛHvaries little with change of the shape, while the biaxial strain ɛBchanges a lot for different shapes of QDs. The recursion method is used to calculate the energy levels of the bound states in QDs. Compared with the strain, the shape plays a key role in the difference of electronic bound energy levels. The numerical results show that the deference of bound energy levels of lenslike InAs QD matches well with the experimental results. Moreover, the pyramid-shaped QD has the greatest difference from the measured experimental data. PMID:20596318

Extending density functional embedding theory for covalently bonded systems.

PubMed

Yu, Kuang; Carter, Emily A

2017-12-19

Quantum embedding theory aims to provide an efficient solution to obtain accurate electronic energies for systems too large for full-scale, high-level quantum calculations. It adopts a hierarchical approach that divides the total system into a small embedded region and a larger environment, using different levels of theory to describe each part. Previously, we developed a density-based quantum embedding theory called density functional embedding theory (DFET), which achieved considerable success in metals and semiconductors. In this work, we extend DFET into a density-matrix-based nonlocal form, enabling DFET to study the stronger quantum couplings between covalently bonded subsystems. We name this theory density-matrix functional embedding theory (DMFET), and we demonstrate its performance in several test examples that resemble various real applications in both chemistry and biochemistry. DMFET gives excellent results in all cases tested thus far, including predicting isomerization energies, proton transfer energies, and highest occupied molecular orbital-lowest unoccupied molecular orbital gaps for local chromophores. Here, we show that DMFET systematically improves the quality of the results compared with the widely used state-of-the-art methods, such as the simple capped cluster model or the widely used ONIOM method.

Demonstration of Quantum Entanglement between a Single Electron Spin Confined to an InAs Quantum Dot and a Photon

NASA Astrophysics Data System (ADS)

Schaibley, J. R.; Burgers, A. P.; McCracken, G. A.; Duan, L.-M.; Berman, P. R.; Steel, D. G.; Bracker, A. S.; Gammon, D.; Sham, L. J.

2013-04-01

The electron spin state of a singly charged semiconductor quantum dot has been shown to form a suitable single qubit for quantum computing architectures with fast gate times. A key challenge in realizing a useful quantum dot quantum computing architecture lies in demonstrating the ability to scale the system to many qubits. In this Letter, we report an all optical experimental demonstration of quantum entanglement between a single electron spin confined to a single charged semiconductor quantum dot and the polarization state of a photon spontaneously emitted from the quantum dot’s excited state. We obtain a lower bound on the fidelity of entanglement of 0.59±0.04, which is 84% of the maximum achievable given the timing resolution of available single photon detectors. In future applications, such as measurement-based spin-spin entanglement which does not require sub-nanosecond timing resolution, we estimate that this system would enable near ideal performance. The inferred (usable) entanglement generation rate is 3×103s-1. This spin-photon entanglement is the first step to a scalable quantum dot quantum computing architecture relying on photon (flying) qubits to mediate entanglement between distant nodes of a quantum dot network.

Demonstration of quantum entanglement between a single electron spin confined to an InAs quantum dot and a photon.

PubMed

Schaibley, J R; Burgers, A P; McCracken, G A; Duan, L-M; Berman, P R; Steel, D G; Bracker, A S; Gammon, D; Sham, L J

2013-04-19

The electron spin state of a singly charged semiconductor quantum dot has been shown to form a suitable single qubit for quantum computing architectures with fast gate times. A key challenge in realizing a useful quantum dot quantum computing architecture lies in demonstrating the ability to scale the system to many qubits. In this Letter, we report an all optical experimental demonstration of quantum entanglement between a single electron spin confined to a single charged semiconductor quantum dot and the polarization state of a photon spontaneously emitted from the quantum dot's excited state. We obtain a lower bound on the fidelity of entanglement of 0.59±0.04, which is 84% of the maximum achievable given the timing resolution of available single photon detectors. In future applications, such as measurement-based spin-spin entanglement which does not require sub-nanosecond timing resolution, we estimate that this system would enable near ideal performance. The inferred (usable) entanglement generation rate is 3×10(3) s(-1). This spin-photon entanglement is the first step to a scalable quantum dot quantum computing architecture relying on photon (flying) qubits to mediate entanglement between distant nodes of a quantum dot network.

Connes' embedding problem and winning strategies for quantum XOR games

NASA Astrophysics Data System (ADS)

Harris, Samuel J.

2017-12-01

We consider quantum XOR games, defined in the work of Regev and Vidick [ACM Trans. Comput. Theory 7, 43 (2015)], from the perspective of unitary correlations defined in the work of Harris and Paulsen [Integr. Equations Oper. Theory 89, 125 (2017)]. We show that the winning bias of a quantum XOR game in the tensor product model (respectively, the commuting model) is equal to the norm of its associated linear functional on the unitary correlation set from the appropriate model. We show that Connes' embedding problem has a positive answer if and only if every quantum XOR game has entanglement bias equal to the commuting bias. In particular, the embedding problem is equivalent to determining whether every quantum XOR game G with a winning strategy in the commuting model also has a winning strategy in the approximate finite-dimensional model.

A quantum annealing approach for fault detection and diagnosis of graph-based systems

NASA Astrophysics Data System (ADS)

Perdomo-Ortiz, A.; Fluegemann, J.; Narasimhan, S.; Biswas, R.; Smelyanskiy, V. N.

2015-02-01

Diagnosing the minimal set of faults capable of explaining a set of given observations, e.g., from sensor readouts, is a hard combinatorial optimization problem usually tackled with artificial intelligence techniques. We present the mapping of this combinatorial problem to quadratic unconstrained binary optimization (QUBO), and the experimental results of instances embedded onto a quantum annealing device with 509 quantum bits. Besides being the first time a quantum approach has been proposed for problems in the advanced diagnostics community, to the best of our knowledge this work is also the first research utilizing the route Problem → QUBO → Direct embedding into quantum hardware, where we are able to implement and tackle problem instances with sizes that go beyond previously reported toy-model proof-of-principle quantum annealing implementations; this is a significant leap in the solution of problems via direct-embedding adiabatic quantum optimization. We discuss some of the programmability challenges in the current generation of the quantum device as well as a few possible ways to extend this work to more complex arbitrary network graphs.

Naval Outgoing Message Processing, A Study of Message Generation and Message Preparation for Transmission and the Impact of Automation.

DTIC Science & Technology

1979-12-01

AM AM .m Itp 3MM"fvob 3MMopo" INA 7M 3M. St Z is pu~ e posep 3MM 3MMoar INA 3M 3MM St. 3M. Y" M3L-SINA1I 334IopAsoe * w*; INAt e M IM0NA .6.6.36...C or 20 ma current loop Current loop (60V. 60 ma) High level (±80V, 20 ma) INA Yes Yes Yes Same sIBM SELECTRIC Yes INA INA INA INA INA INA INA INA

Applications and assessment of QM:QM electronic embedding using generalized asymmetric Mulliken atomic charges.

PubMed

Parandekar, Priya V; Hratchian, Hrant P; Raghavachari, Krishnan

2008-10-14

Hybrid QM:QM (quantum mechanics:quantum mechanics) and QM:MM (quantum mechanics:molecular mechanics) methods are widely used to calculate the electronic structure of large systems where a full quantum mechanical treatment at a desired high level of theory is computationally prohibitive. The ONIOM (our own N-layer integrated molecular orbital molecular mechanics) approximation is one of the more popular hybrid methods, where the total molecular system is divided into multiple layers, each treated at a different level of theory. In a previous publication, we developed a novel QM:QM electronic embedding scheme within the ONIOM framework, where the model system is embedded in the external Mulliken point charges of the surrounding low-level region to account for the polarization of the model system wave function. Therein, we derived and implemented a rigorous expression for the embedding energy as well as analytic gradients that depend on the derivatives of the external Mulliken point charges. In this work, we demonstrate the applicability of our QM:QM method with point charge embedding and assess its accuracy. We study two challenging systems--zinc metalloenzymes and silicon oxide cages--and demonstrate that electronic embedding shows significant improvement over mechanical embedding. We also develop a modified technique for the energy and analytic gradients using a generalized asymmetric Mulliken embedding method involving an unequal splitting of the Mulliken overlap populations to offer improvement in situations where the Mulliken charges may be deficient.

Nonlinear Optics and Coherent Optical Control of Single Electron Systems

DTIC Science & Technology

2008-08-01

Gammon, L. J. Sham, "On- Resonant Trion Rabi Oscillations and Spin Quantum Beats in a Singly Charged InAs Quan- tum Dot, " QELS 2008. EDUCATIONAL...perimentally that the strong coupling leads to new spectral features, such as Rabi side bands in the absorption, and strikingly, the amplification of a...see the Mollow spectrum suggesting that negatively charged dots may not behave cor- rectly allowing for Rabi oscillations. Fortu- nately, our

Temperature Dependence of Optical Linewidth in Single InAs Quantum Dots

DTIC Science & Technology

2006-10-19

the linear temperature coefficient and its dependence on mesa size are described well by exciton scattering by acoustic phonons whose lifetimes are...transformation of a one-particle time-dependent exciton Green’s function. This is equivalent to using a two-particle interband correlation function in...For the disklike case of 2RL we neglect the lateral tunneling . The anisotropy of the valence band should be taken into account: mxy mz. For the

Luminescence studies of HgCdTe- and InAsSb-based quantum-well structures

NASA Astrophysics Data System (ADS)

Izhnin, I. I.; Izhnin, A. I.; Fitsych, O. I.; Voitsekhovskii, A. V.; Gorn, D. I.; Semakova, A. A.; Bazhenov, N. L.; Mynbaev, K. D.; Zegrya, G. G.

2018-04-01

Results of photoluminescence studies of single-quantum-well HgCdTe-based structures and electroluminescence studies of multiple-quantum-well InAsSb-based structures are reported. HgCdTe structures were grown with molecular beam epitaxy on GaAs substrates. InAsSb-based structures were grown with metal-organic chemical vapor deposition on InAs substrates. The common feature of luminescence spectra of all the structures was the presence of peaks with the energy much larger than that of calculated optical transitions between the first quantization levels for electrons and heavy holes. Possibility of observation of optical transitions between the quantization levels of electrons and first and/or second heavy and light hole levels is discussed in the paper in relation to the specifics of the electronic structure of the materials under consideration.

Optically pumped lasing in a rolled-up dot-in-a-well (DWELL) microtube via the support of Au pad

NASA Astrophysics Data System (ADS)

Chai, Zhaoer; Wang, Qi; Cao, Jiawei; Mao, Guoming; Liu, Hao; Ren, Xiaomin; Maleev, Nikolai A.; Vasil'ev, Alexey P.; Zhukov, Alexey E.; Ustinov, Victor M.

2018-02-01

We report the observation of optically pumped continuous wave lasing in a self-rolled-up InGaAs/GaAs quantum dot microtube at room temperature. Single layer of InAs quantum dots ( 2.6 ML coverage) in a GaAs well sandwiched by two AlGaAs barriers are incorporated into the tube wall as the gain media. As-fabricated microtube is supported by a 300-nm-thick Au pad, aiming to separate the tube from GaAs substrate and thus to decrease the substrate loss, which finally enables lasing with ultralow threshold power ( 4 µW) from an microtube ring resonator.

Mid-infrared InAs/AlGaSb superlattice quantum-cascade lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ohtani, K.; Fujita, K.; Ohno, H.

2005-11-21

We report on the demonstration of mid-infrared InAs/AlGaSb superlattice quantum-cascade lasers operating at 10 {mu}m. The laser structures are grown on n-InAs (100) substrate by solid-source molecular-beam epitaxy. An InAs/AlGaSb chirped superlattice structure providing a large oscillator strength and fast carrier depopulation is employed as the active part. The observed minimum threshold current density at 80 K is 0.7 kA/cm{sup 2}, and the maximum operation temperature in pulse mode is 270 K. The waveguide loss of an InAs plasmon waveguide is estimated, and the factors that determine the operation temperature are discussed.

Origins of interlayer formation and misfit dislocation displacement in the vicinity of InAs/GaAs quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, S.; Kim, S. J.; Pan, X. Q.

We have examined the origins of interlayer formation and misfit dislocation (MD) displacement in the vicinity of InAs/GaAs quantum dots (QDs). For QDs formed by the Stranski-Krastanov mode, regularly spaced MDs nucleate at the interface between the QD and the GaAs buffer layer. In the droplet epitaxy case, both In island formation and In-induced “nano-drilling” of the GaAs buffer layer are observed during In deposition. Upon annealing under As flux, the In islands are converted to InAs QDs, with an InGaAs interlayer at the QD/buffer interface. Meanwhile, MDs nucleate at the QD/interlayer interface.

Temperature dependent photoluminescence and micromapping of multiple stacks InAs quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, Ming, E-mail: ming.xu@lgep.supelec.fr; Jaffré, Alexandre, E-mail: ming.xu@lgep.supelec.fr; Alvarez, José, E-mail: ming.xu@lgep.supelec.fr

2015-02-27

We utilized temperature dependent photoluminescence (PL) techniques to investigate 1, 3 and 5 stack InGaAs quantum dots (QDs) grown on cross-hatch patterns. PL mapping can well reproduce the QDs distribution as AFM and position dependency of QD growth. It is possible to observe crystallographic dependent PL. The temperature dependent spectra exhibit the QDs energy distribution which reflects the size and shape. The inter-dot carrier coupling effect is observed and translated as a red shift of 120mV on the [1–10] direction peak is observed at 30K on 1 stack with regards to 3 stacks samples, which is assigned to lateral coupling.

Highly efficient quantum dot-based photoconductive THz materials and devices

NASA Astrophysics Data System (ADS)

Rafailov, E. U.; Leyman, R.; Carnegie, D.; Bazieva, N.

2013-09-01

We demonstrate Terahertz (THz) signal sources based on photoconductive (PC) antenna devices comprising active layers of InAs semiconductor quantum dots (QDs) on GaAs. Antenna structures comprised of multiple active layers of InAs:GaAs PC materials are optically pumped using ultrashort pulses generated by a Ti:Sapphire laser and CW dualwavelength laser diodes. We also characterised THz output signals using a two-antenna coherent detection system. We discuss preliminary performance data from such InAs:GaAs THz devices which exhibit efficient emission of both pulsed and continuous wave (CW) THz signals and significant optical-to-THz conversion at both absorption wavelength ranges, <=850 nm and <=1300 nm.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kong Lingmin; Feng Zhechuan; Wu Zhengyun

Four types of self-assembled InAs/GaAs quantum dots (QDs) were grown by molecular beam epitaxy and studied via temperature-dependent and time-resolved photoluminescence (PL) spectroscopy measurements. A thin InGaAs stain reducing layer (SRL) is adopted which extends the emission wavelength to 1.3 mum and the influence of strain on QDs is investigated. The SRL releases the strain between the wetting layer and QDs, and enlarges the size of QDs, as shown by atomic force microscopy measurements. As the thickness of InAs layer decreases to 1.7 ML, the QDs with the SRL are chained to strings and the density of QDs increases significantly,more » which leads to an abnormal redshift of 1.3 mum PL peak at room temperature. PL peaks of InAs QDs with the SRL show redshift compared with the QDs directly deposited on GaAs matrix. The dependences of PL lifetime on the QD size, density and temperature (T) are systematically studied. It is observed that the PL lifetime of QDs is insensitive to T below 50 K. Beyond 50 K, increases and then drops at higher temperature, with a peak at T{sub C}, which was determined by the SRL and the thickness of InAs. We have also observed an obvious PL spectral redshift of the QDs with 1.7 ML InAs coverage on SRL at low T as the measuring time delays. The PL lifetime of QDs with the SRL is smaller than that of QDs without the SRL. The QDs with different densities have different PL lifetime dependence on the QDs size. These observations can be explained by the competition between the carrier redistribution and thermal emission.« less

Room-temperature resonant quantum tunneling transport of macroscopic systems.

PubMed

Xiong, Zhengwei; Wang, Xuemin; Yan, Dawei; Wu, Weidong; Peng, Liping; Li, Weihua; Zhao, Yan; Wang, Xinmin; An, Xinyou; Xiao, Tingting; Zhan, Zhiqiang; Wang, Zhuo; Chen, Xiangrong

2014-11-21

A self-assembled quantum dots array (QDA) is a low dimensional electron system applied to various quantum devices. This QDA, if embedded in a single crystal matrix, could be advantageous for quantum information science and technology. However, the quantum tunneling effect has been difficult to observe around room temperature thus far, because it occurs in a microcosmic and low temperature condition. Herein, we show a designed a quasi-periodic Ni QDA embedded in a single crystal BaTiO3 matrix and demonstrate novel quantum resonant tunneling transport properties around room-temperature according to theoretical calculation and experiments. The quantum tunneling process could be effectively modulated by changing the Ni QDA concentration. The major reason was that an applied weak electric field (∼10(2) V cm(-1)) could be enhanced by three orders of magnitude (∼10(5) V cm(-1)) between the Ni QDA because of the higher permittivity of BaTiO3 and the 'hot spots' of the Ni QDA. Compared with the pure BaTiO3 films, the samples with embedded Ni QDA displayed a stepped conductivity and temperature (σ-T curves) construction.

Accuracy of Protein Embedding Potentials: An Analysis in Terms of Electrostatic Potentials.

PubMed

Olsen, Jógvan Magnus Haugaard; List, Nanna Holmgaard; Kristensen, Kasper; Kongsted, Jacob

2015-04-14

Quantum-mechanical embedding methods have in recent years gained significant interest and may now be applied to predict a wide range of molecular properties calculated at different levels of theory. To reach a high level of accuracy in embedding methods, both the electronic structure model of the active region and the embedding potential need to be of sufficiently high quality. In fact, failures in quantum mechanics/molecular mechanics (QM/MM)-based embedding methods have often been associated with the QM/MM methodology itself; however, in many cases the reason for such failures is due to the use of an inaccurate embedding potential. In this paper, we investigate in detail the quality of the electronic component of embedding potentials designed for calculations on protein biostructures. We show that very accurate explicitly polarizable embedding potentials may be efficiently designed using fragmentation strategies combined with single-fragment ab initio calculations. In fact, due to the self-interaction error in Kohn-Sham density functional theory (KS-DFT), use of large full-structure quantum-mechanical calculations based on conventional (hybrid) functionals leads to less accurate embedding potentials than fragment-based approaches. We also find that standard protein force fields yield poor embedding potentials, and it is therefore not advisable to use such force fields in general QM/MM-type calculations of molecular properties other than energies and structures.

Random matrix ensembles for many-body quantum systems

NASA Astrophysics Data System (ADS)

Vyas, Manan; Seligman, Thomas H.

2018-04-01

Classical random matrix ensembles were originally introduced in physics to approximate quantum many-particle nuclear interactions. However, there exists a plethora of quantum systems whose dynamics is explained in terms of few-particle (predom-inantly two-particle) interactions. The random matrix models incorporating the few-particle nature of interactions are known as embedded random matrix ensembles. In the present paper, we provide a brief overview of these two ensembles and illustrate how the embedded ensembles can be successfully used to study decoherence of a qubit interacting with an environment, both for fermionic and bosonic embedded ensembles. Numerical calculations show the dependence of decoherence on the nature of the environment.

VideoStory: A New Multimedia Embedding for Few Example Recognition and Translation of Events

DTIC Science & Technology

2014-11-07

series, and movie trailers . We observe these professional videos are typically semantically dissimilar to the event videos which we are interested in...a list of keywords from Wikipedia, which provides an extensive index of celebrity, TV series and movie names1. We exclude the videos whose...Swimming 0.520 0.489 0.691 0.764 Biking 0.324 0.307 0.420 0.561 Graduation 0.083 0.058 0.135 0.121 Birthday 0.149 0.216 0.187 0.257 Wedding reception

Growth of III-V films by control of MBE growth front stoichiometry

NASA Technical Reports Server (NTRS)

Grunthaner, Frank J. (Inventor); Liu, John K. (Inventor); Hancock, Bruce R. (Inventor)

1992-01-01

For the growth of strain-layer materials and high quality single and multiple quantum wells, the instantaneous control of growth front stoichiometry is critical. The process of the invention adjusts the offset or phase of molecular beam epitaxy (MBE) control shutters to program the instantaneous arrival or flux rate of In and As4 reactants to grow InAs. The interrupted growth of first In, then As4, is also a key feature.

Shot-noise at a Fermi-edge singularity: Non-Markovian dynamics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ubbelohde, N.; Maire, N.; Haug, R. J.

2013-12-04

For an InAs quantum dot we study the current shot noise at a Fermi-edge singularity in low temperature cross-correlation measurements. In the regime of the interaction effect the strong suppression of noise observed at zero magnetic field and the sequence of enhancement and suppression in magnetic field go beyond a Markovian master equation model. Qualitative and quantitative agreement can however be achieved by a generalized master equation model taking non-Markovian dynamics into account.

Leveraging Crystal Anisotropy for Deterministic Growth of InAs Quantum Dots with Narrow Optical Linewidths

DTIC Science & Technology

2013-08-29

similar layer thicknesses. This offset indicates that the electric field profile of our Schottky diode is different than for unpatterned samples, implying...sacrificing uniformity by further optimizing the substrate Figure 3. (a) Schematic of the Schottky diode heterostructure, indicating the patterned substrate...and negative (X−) trions are indicated . (c) Distribution of linewidths for 80 PL lines from dots grown in high density arrays such as those in Figure 2b

Electrical and optical characterizations of InAs/GaAs quantum dot solar cells

NASA Astrophysics Data System (ADS)

Han, Im Sik; Kim, Seung Hyun; Kim, Jong Su; Noh, Sam Kyu; Lee, Sang Jun; Kim, Honggyun; Kim, Deok-Kee; Leem, Jae-Young

2018-03-01

The electrical and optical characterizations of InAs/GaAs quantum dot solar cells (QDSCs) were investigated by frequency dependent capacitance-voltage ( C- V) measurements and photoreflectance (PR) spectroscopy. The C- V results confirmed that the frequency dependent junction capacitance ( C j) of QDSC is sensitive to the carrier exhaustion process through trapping and recapturing in the strain-induced defects and QD states caused by the interface strain between InAs and GaAs materials. As a result, at a low frequency (≤ 200 kHz), the C j of the QDSCs decreased with increasing InAs deposition thickness ( θ), leading to the decrease in carrier concentration ( N d) of the n-GaAs absorber layer due to the carrier losses processes caused by the trapping and re-capturing in the defects and the relatively large QDs. At θ ≤ 2.0 ML, the p-n junction electric field strength ( F pn) of the QDSCs which was evaluated by PR spectra decreased with increasing excitation photon intensity ( I ex) due to the typical field screening effect in the SC structure. On the other hand, the F pn of QDSCs with θ ≥ 2.5 ML approached a constant value with a relatively high I ex, which suggests that the decrease in photo-generated carriers in the QDSC was caused by the re-capturing and trapping process.

Eight-band k·p modeling of InAs/InGaAsSb type-II W-design quantum well structures for interband cascade lasers emitting in a broad range of mid infrared

NASA Astrophysics Data System (ADS)

Ryczko, K.; Sek, G.; Misiewicz, J.

2013-12-01

Band structure properties of the type-II W-design AlSb/InAs/GaIn(As)Sb/InAs/AlSb quantum wells have been investigated theoretically in a systematic manner and with respect to their use in the active region of interband cascade laser for a broad range of emission in mid infrared between below 3 to beyond 10 μm. Eight-band k.p approach has been utilized to calculate the electronic subbands. The fundamental optical transition energy and the corresponding oscillator strength have been determined in function of the thickness of InAs and GaIn(As)Sb layers and the composition of the latter. There have been considered active structures on two types of relevant substrates, GaSb and InAs, introducing slightly modified strain conditions. Additionally, the effect of external electric field has been taken into account to simulate the conditions occurring in the operational devices. The results show that introducing arsenic as fourth element into the valence band well of the type-II W-design system, and then altering its composition, can efficiently enhance the transition oscillator strength and allow additionally increasing the emission wavelength, which makes this solution prospective for improved performance and long wavelength interband cascade lasers.

Eight-band k·p modeling of InAs/InGaAsSb type-II W-design quantum well structures for interband cascade lasers emitting in a broad range of mid infrared

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ryczko, K.; Sęk, G.; Misiewicz, J.

Band structure properties of the type-II W-design AlSb/InAs/GaIn(As)Sb/InAs/AlSb quantum wells have been investigated theoretically in a systematic manner and with respect to their use in the active region of interband cascade laser for a broad range of emission in mid infrared between below 3 to beyond 10 μm. Eight-band k·p approach has been utilized to calculate the electronic subbands. The fundamental optical transition energy and the corresponding oscillator strength have been determined in function of the thickness of InAs and GaIn(As)Sb layers and the composition of the latter. There have been considered active structures on two types of relevant substrates, GaSbmore » and InAs, introducing slightly modified strain conditions. Additionally, the effect of external electric field has been taken into account to simulate the conditions occurring in the operational devices. The results show that introducing arsenic as fourth element into the valence band well of the type-II W-design system, and then altering its composition, can efficiently enhance the transition oscillator strength and allow additionally increasing the emission wavelength, which makes this solution prospective for improved performance and long wavelength interband cascade lasers.« less

Bias Dependent Spin Relaxation in a [110]-InAs/AlSb Two Dimensional Electron System

NASA Astrophysics Data System (ADS)

Hicks, J.; Holabird, K.

2005-03-01

Manipulation of electron spin is a critical component of many proposed semiconductor spintronic devices. One promising approach utilizes the Rashba effect by which an applied electric field can be used to reduce the spin lifetime or rotate spin orientation through spin-orbit interaction. The large spin-orbit interaction needed for this technique to be effective typically leads to fast spin relaxation through precessional decay, which may severely limit device architectures and functionalities. An exception arises in [110]-oriented heterostructures where the crystal magnetic field associated with bulk inversion asymmetry lies along the growth direction and in which case spins oriented along the growth direction do not precess. These considerations have led to a recent proposal of a spin-FET that incorporates a [110]-oriented, gate-controlled InAs quantum well channel [1]. We report measurements of the electron spin lifetime as a function of applied electric field in a [110]-InAs 2DES. Measurements made using an ultrafast, mid-IR pump-probe technique indicate that the spin lifetime can be reduced from its maximum to minimum value over a range of less than 0.2V per quantum well at room temperature. This work is supported by DARPA, NSERC and the NSF grant ECS - 0322021. [1] K. C. Hall, W. H. Lau, K. Gundogdu, M. E. Flatte, and T. F. Boggess, Appl. Phys. Lett. 83, 2937 (2003).

Size-dependent energy levels of InSb quantum dots measured by scanning tunneling spectroscopy.

PubMed

Wang, Tuo; Vaxenburg, Roman; Liu, Wenyong; Rupich, Sara M; Lifshitz, Efrat; Efros, Alexander L; Talapin, Dmitri V; Sibener, S J

2015-01-27

The electronic structure of single InSb quantum dots (QDs) with diameters between 3 and 7 nm was investigated using atomic force microscopy (AFM) and scanning tunneling spectroscopy (STS). In this size regime, InSb QDs show strong quantum confinement effects which lead to discrete energy levels on both valence and conduction band states. Decrease of the QD size increases the measured band gap and the spacing between energy levels. Multiplets of equally spaced resonance peaks are observed in the tunneling spectra. There, multiplets originate from degeneracy lifting induced by QD charging. The tunneling spectra of InSb QDs are qualitatively different from those observed in the STS of other III-V materials, for example, InAs QDs, with similar band gap energy. Theoretical calculations suggest the electron tunneling occurs through the states connected with L-valley of InSb QDs rather than through states of the Γ-valley. This observation calls for better understanding of the role of indirect valleys in strongly quantum-confined III-V nanomaterials.

Two dimensional exciton polaritons in microcavities with embedded quantum wires

NASA Astrophysics Data System (ADS)

Kavokin, A. V.; Ivchenko, E. L.; Vladimirova, M. R.; Kaliteevski, M. A.; Goupalov, S. V.

1998-02-01

Optical anisotropy of the periodical array of quantum wires embedded in a semiconductor microcavity is shown to result in polarization-dependent vacuum-field Rabi-splitting and a triple-anticrossing shape of the exciton-polariton dispersion curves. Both effects originate from the resonant diffraction of light at the grating of quantum wires. The calculation has been done within the nonlocal dielectric response theory and using the 4 × 4 transfer matrix technique.

Kinetic and functional analysis of transient, persistent and resurgent sodium currents in rat cerebellar granule cells in situ: an electrophysiological and modelling study

PubMed Central

Magistretti, Jacopo; Castelli, Loretta; Forti, Lia; D'Angelo, Egidio

2006-01-01

Cerebellar neurones show complex and differentiated mechanisms of action potential generation that have been proposed to depend on peculiar properties of their voltage-dependent Na+ currents. In this study we analysed voltage-dependent Na+ currents of rat cerebellar granule cells (GCs) by performing whole-cell, patch-clamp experiments in acute rat cerebellar slices. A transient Na+ current (INaT) was always present and had the properties of a typical fast-activating/inactivating Na+ current. In addition to INaT, robust persistent (INaP) and resurgent (INaR) Na+ currents were observed. INaP peaked at ∼−40 mV, showed half-maximal activation at ∼−55 mV, and its maximal amplitude was about 1.5% of that of INaT. INaR was elicited by repolarizing pulses applied following step depolarizations able to activate/inactivate INaT, and showed voltage- and time-dependent activation and voltage-dependent decay kinetics. The conductance underlying INaR showed a bell-shaped voltage dependence, with peak at −35 mV. A significant correlation was found between GC INaR and INaT peak amplitudes; however, GCs expressing INaT of similar size showed marked variability in terms of INaR amplitude, and in a fraction of cells INaR was undetectable. INaT, INaP and INaR could be accounted for by a 13-state kinetic scheme comprising closed, open, inactivated and blocked states. Current-clamp experiments carried out to identify possible functional correlates of INaP and/or INaR revealed that in GCs single action potentials were followed by depolarizing afterpotentials (DAPs). In a majority of cells, DAPs showed properties consistent with INaR playing a role in their generation. Computer modelling showed that INaR promotes DAP generation and enhances high-frequency firing, whereas INaP boosts near-threshold firing activity. Our findings suggest that special properties of voltage-dependent Na+ currents provides GCs with mechanisms suitable for shaping activity patterns, with potentially important consequences for cerebellar information transfer and computation. PMID:16527854

Characterization of free-standing InAs quantum membranes by standing wave hard x-ray photoemission spectroscopy

NASA Astrophysics Data System (ADS)

Conti, G.; Nemšák, S.; Kuo, C.-T.; Gehlmann, M.; Conlon, C.; Keqi, A.; Rattanachata, A.; Karslıoǧlu, O.; Mueller, J.; Sethian, J.; Bluhm, H.; Rault, J. E.; Rueff, J. P.; Fang, H.; Javey, A.; Fadley, C. S.

2018-05-01

Free-standing nanoribbons of InAs quantum membranes (QMs) transferred onto a (Si/Mo) multilayer mirror substrate are characterized by hard x-ray photoemission spectroscopy (HXPS) and by standing-wave HXPS (SW-HXPS). Information on the chemical composition and on the chemical states of the elements within the nanoribbons was obtained by HXPS and on the quantitative depth profiles by SW-HXPS. By comparing the experimental SW-HXPS rocking curves to x-ray optical calculations, the chemical depth profile of the InAs(QM) and its interfaces were quantitatively derived with ångström precision. We determined that (i) the exposure to air induced the formation of an InAsO4 layer on top of the stoichiometric InAs(QM); (ii) the top interface between the air-side InAsO4 and the InAs(QM) is not sharp, indicating that interdiffusion occurs between these two layers; (iii) the bottom interface between the InAs(QM) and the native oxide SiO2 on top of the (Si/Mo) substrate is abrupt. In addition, the valence band offset (VBO) between the InAs(QM) and the SiO2/(Si/Mo) substrate was determined by HXPS. The value of VBO = 0.2 ± 0.04 eV is in good agreement with literature results obtained by electrical characterization, giving a clear indication of the formation of a well-defined and abrupt InAs/SiO2 heterojunction. We have demonstrated that HXPS and SW-HXPS are non-destructive, powerful methods for characterizing interfaces and for providing chemical depth profiles of nanostructures, quantum membranes, and 2D layered materials.

The Quality of the Embedding Potential Is Decisive for Minimal Quantum Region Size in Embedding Calculations: The Case of the Green Fluorescent Protein.

PubMed

Nåbo, Lina J; Olsen, Jógvan Magnus Haugaard; Martínez, Todd J; Kongsted, Jacob

2017-12-12

The calculation of spectral properties for photoactive proteins is challenging because of the large cost of electronic structure calculations on large systems. Mixed quantum mechanical (QM) and molecular mechanical (MM) methods are typically employed to make such calculations computationally tractable. This study addresses the connection between the minimal QM region size and the method used to model the MM region in the calculation of absorption properties-here exemplified for calculations on the green fluorescent protein. We find that polarizable embedding is necessary for a qualitatively correct description of the MM region, and that this enables the use of much smaller QM regions compared to fixed charge electrostatic embedding. Furthermore, absorption intensities converge very slowly with system size and inclusion of effective external field effects in the MM region through polarizabilities is therefore very important. Thus, this embedding scheme enables accurate prediction of intensities for systems that are too large to be treated fully quantum mechanically.

Fast Purcell-enhanced single photon source in 1,550-nm telecom band from a resonant quantum dot-cavity coupling

PubMed Central

Birowosuto, Muhammad Danang; Sumikura, Hisashi; Matsuo, Shinji; Taniyama, Hideaki; van Veldhoven, Peter J.; Nötzel, Richard; Notomi, Masaya

2012-01-01

High-bit-rate nanocavity-based single photon sources in the 1,550-nm telecom band are challenges facing the development of fibre-based long-haul quantum communication networks. Here we report a very fast single photon source in the 1,550-nm telecom band, which is achieved by a large Purcell enhancement that results from the coupling of a single InAs quantum dot and an InP photonic crystal nanocavity. At a resonance, the spontaneous emission rate was enhanced by a factor of 5 resulting a record fast emission lifetime of 0.2 ns at 1,550 nm. We also demonstrate that this emission exhibits an enhanced anti-bunching dip. This is the first realization of nanocavity-enhanced single photon emitters in the 1,550-nm telecom band. This coupled quantum dot cavity system in the telecom band thus provides a bright high-bit-rate non-classical single photon source that offers appealing novel opportunities for the development of a long-haul quantum telecommunication system via optical fibres. PMID:22432053

Fast Purcell-enhanced single photon source in 1,550-nm telecom band from a resonant quantum dot-cavity coupling.

PubMed

Birowosuto, Muhammad Danang; Sumikura, Hisashi; Matsuo, Shinji; Taniyama, Hideaki; van Veldhoven, Peter J; Nötzel, Richard; Notomi, Masaya

2012-01-01

High-bit-rate nanocavity-based single photon sources in the 1,550-nm telecom band are challenges facing the development of fibre-based long-haul quantum communication networks. Here we report a very fast single photon source in the 1,550-nm telecom band, which is achieved by a large Purcell enhancement that results from the coupling of a single InAs quantum dot and an InP photonic crystal nanocavity. At a resonance, the spontaneous emission rate was enhanced by a factor of 5 resulting a record fast emission lifetime of 0.2 ns at 1,550 nm. We also demonstrate that this emission exhibits an enhanced anti-bunching dip. This is the first realization of nanocavity-enhanced single photon emitters in the 1,550-nm telecom band. This coupled quantum dot cavity system in the telecom band thus provides a bright high-bit-rate non-classical single photon source that offers appealing novel opportunities for the development of a long-haul quantum telecommunication system via optical fibres.

Guided self-assembly of lateral InAs/GaAs quantum-dot molecules for single molecule spectroscopy

PubMed Central

Wang, L; Kiravittaya, S; Songmuang, R; Schmidt, OG; Krause, B; Metzger, TH

2006-01-01

We report on the growth and characterization of lateral InAs/GaAs (001) quantum-dot molecules (QDMs) suitable for single QDM optical spectroscopy. The QDMs, forming by depositing InAs on GaAs surfaces with self-assembled nanoholes, are aligned along the [] direction. The relative number of isolated single quantum dots (QDs) is substantially reduced by performing the growth on GaAs surfaces containing stepped mounds. Surface morphology and X-ray measurements suggest that the strain produced by InGaAs-filled nanoholes superimposed to the strain relaxation at the step edges are responsible for the improved QDM properties. QDMs are Ga-richer compared to single QDs, consistent with strain- enhanced intermixing. The high optical quality of single QDMs is probed by micro-photoluminescence spectroscopy in samples with QDM densities lower than 108 cm−2.

Manipulating surface diffusion and elastic interactions to obtain quantum dot multilayer arrangements over different length scales

DOE Office of Scientific and Technical Information (OSTI.GOV)

Placidi, E., E-mail: ernesto.placidi@ism.cnr.it; Arciprete, F.; Università di Roma “Tor Vergata”, Dipartimento di Fisica, via della Ricerca Scientifica 1, 00133 Rome

2014-09-15

An innovative multilayer growth of InAs quantum dots on GaAs(100) is demonstrated to lead to self-aggregation of correlated quantum dot chains over mesoscopic distances. The fundamental idea is that at critical growth conditions is possible to drive the dot nucleation only at precise locations corresponding to the local minima of the Indium chemical potential. Differently from the known dot multilayers, where nucleation of new dots on top of the buried ones is driven by the surface strain originating from the dots below, here the spatial correlations and nucleation of additional dots are mostly dictated by a self-engineering of the surfacemore » occurring during the growth, close to the critical conditions for dot formation under the fixed oblique direction of the incoming As flux, that drives the In surface diffusion.« less

High power cascade diode lasers emitting near 2 μm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hosoda, Takashi; Feng, Tao; Shterengas, Leon, E-mail: leon.shterengas@stonybrook.edu

2016-03-28

High-power two-stage cascade GaSb-based type-I quantum well diode lasers emitting near 2 μm were designed and fabricated. Coated devices with cavity length of 3 mm generated about 2 W of continuous wave power from 100-μm-wide aperture at the current of 6 A. The power conversion efficiency peaked at 20%. Carrier recycling between quantum well gain stages was realized using band-to-band tunneling in GaSb/AlSb/InAs heterostructure complemented with optimized electron and hole injector regions. Design optimization eliminated parasitic optical absorption and thermionic emission, and included modification of the InAs quantum wells of electron and composition and doping profile of hole injectors. Utilization of the cascade pumpingmore » scheme yielded 2 μm lasers with improved output power and efficiency compared to existing state-of-the-art diodes.« less

Single-photon emission of InAs/InP quantum dashes at 1.55 μm and temperatures up to 80 K

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dusanowski, Ł., E-mail: lukasz.dusanowski@pwr.edu.pl; Syperek, M.; Misiewicz, J.

2016-04-18

We report on single photon emission from a self-assembled InAs/InGaAlAs/InP quantum dash emitting at 1.55 μm at the elevated temperatures. The photon auto-correlation histograms of the emission from a charged exciton indicate clear antibunching dips with as-measured g{sup (2)}(0) values significantly below 0.5 recorded at temperatures up to 80 K. It proves that the charged exciton complex in a single quantum dash of the mature InP-based material system can act as a true single photon source up to at least liquid nitrogen temperature. This demonstrates the huge potential of InAs on InP nanostructures as the non-classical light emitters for long-distance fiber-based securemore » communication technologies.« less

High quality factor GaAs-based photonic crystal microcavities by epitaxial re-growth.

PubMed

Prieto, Ivan; Herranz, Jesús; Wewior, Lukasz; González, Yolanda; Alén, Benito; González, Luisa; Postigo, Pablo A

2013-12-16

We investigate L7 photonic crystal microcavities (PCMs) fabricated by epitaxial re-growth of GaAs pre-patterned substrates, containing InAs quantum dots. The resulting PCMs show hexagonal shaped nano-holes due to the development of preferential crystallographic facets during the re-growth step. Through a careful control of the fabrication processes, we demonstrate that the photonic modes are preserved throughout the process. The quality factor (Q) of the photonic modes in the re-grown PCMs strongly depends on the relative orientation between photonic lattice and crystallographic directions. The optical modes of the re-grown PCMs preserve the linear polarization and, for the most favorable orientation, a 36% of the Q measured in PCMs fabricated by the conventional procedure is observed, exhibiting values up to ~6000. The results aim to the future integration of site-controlled QDs with high-Q PCMs for quantum photonics and quantum integrated circuits.

Tailoring the photoluminescence polarization anisotropy of a single InAs quantum dash by a post-growth modification of its dielectric environment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mrowiński, P.; Misiewicz, J.; Sęk, G.

Excitonic emission from single InAs/InGaAlAs/InP quantum dashes has been investigated in terms of controlling the polarization anisotropy by altering the shape of the processed sub-micrometer mesa structures. Photoluminescence has been measured from exemplary single quantum dashes emitting around 1.3 and 1.55 μm and placed inside rectangular mesas of various orientation, asymmetry, and sizes. The detected degree of linear polarization of bright exciton emission ranges from −0.1 to ca. 0.55, compared to 0.25 for dashes in unaltered or isotropic in-plane dielectric surrounding. These results are interpreted by numerical simulations using an emitter coupled with a single optical mode in such a mesamore » and outgoing in the direction normal to the sample surface.« less

Synchronous correlation matrices and Connes’ embedding conjecture

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dykema, Kenneth J., E-mail: kdykema@math.tamu.edu; Paulsen, Vern, E-mail: vern@math.uh.edu

In the work of Paulsen et al. [J. Funct. Anal. (in press); preprint arXiv:1407.6918], the concept of synchronous quantum correlation matrices was introduced and these were shown to correspond to traces on certain C*-algebras. In particular, synchronous correlation matrices arose in their study of various versions of quantum chromatic numbers of graphs and other quantum versions of graph theoretic parameters. In this paper, we develop these ideas further, focusing on the relations between synchronous correlation matrices and microstates. We prove that Connes’ embedding conjecture is equivalent to the equality of two families of synchronous quantum correlation matrices. We prove thatmore » if Connes’ embedding conjecture has a positive answer, then the tracial rank and projective rank are equal for every graph. We then apply these results to more general non-local games.« less

Superconducting parity effect across the Anderson limit

PubMed Central

Vlaic, Sergio; Pons, Stéphane; Zhang, Tianzhen; Assouline, Alexandre; Zimmers, Alexandre; David, Christophe; Rodary, Guillemin; Girard, Jean-Christophe; Roditchev, Dimitri; Aubin, Hervé

2017-01-01

How small can superconductors be? For isolated nanoparticles subject to quantum size effects, P.W. Anderson in 1959 conjectured that superconductivity could only exist when the electronic level spacing δ is smaller than the superconducting gap energy Δ. Here we report a scanning tunnelling spectroscopy study of superconducting lead (Pb) nanocrystals grown on the (110) surface of InAs. We find that for nanocrystals of lateral size smaller than the Fermi wavelength of the 2D electron gas at the surface of InAs, the electronic transmission of the interface is weak; this leads to Coulomb blockade and enables the extraction of electron addition energy of the nanocrystals. For large nanocrystals, the addition energy displays superconducting parity effect, a direct consequence of Cooper pairing. Studying this parity effect as a function of nanocrystal volume, we find the suppression of Cooper pairing when the mean electronic level spacing overcomes the superconducting gap energy, thus demonstrating unambiguously the validity of the Anderson criterion. PMID:28240294

Enhancing quantum annealing performance for the molecular similarity problem

NASA Astrophysics Data System (ADS)

Hernandez, Maritza; Aramon, Maliheh

2017-05-01

Quantum annealing is a promising technique which leverages quantum mechanics to solve hard optimization problems. Considerable progress has been made in the development of a physical quantum annealer, motivating the study of methods to enhance the efficiency of such a solver. In this work, we present a quantum annealing approach to measure similarity among molecular structures. Implementing real-world problems on a quantum annealer is challenging due to hardware limitations such as sparse connectivity, intrinsic control error, and limited precision. In order to overcome the limited connectivity, a problem must be reformulated using minor-embedding techniques. Using a real data set, we investigate the performance of a quantum annealer in solving the molecular similarity problem. We provide experimental evidence that common practices for embedding can be replaced by new alternatives which mitigate some of the hardware limitations and enhance its performance. Common practices for embedding include minimizing either the number of qubits or the chain length and determining the strength of ferromagnetic couplers empirically. We show that current criteria for selecting an embedding do not improve the hardware's performance for the molecular similarity problem. Furthermore, we use a theoretical approach to determine the strength of ferromagnetic couplers. Such an approach removes the computational burden of the current empirical approaches and also results in hardware solutions that can benefit from simple local classical improvement. Although our results are limited to the problems considered here, they can be generalized to guide future benchmarking studies.

Assessing frequency-dependent site polarisabilities in linear response polarisable embedding

NASA Astrophysics Data System (ADS)

Nørby, Morten S.; Vahtras, Olav; Norman, Patrick; Kongsted, Jacob

2017-01-01

In this paper, we discuss the impact of using a frequency-dependent embedding potential in quantum chemical embedding calculations of response properties. We show that the introduction of a frequency-dependent embedding potential leads to further model complications upon solving the central equations defining specific molecular properties. On the other hand, we also show from a numerical point of view that the consequences of using such a frequency-dependent embedding potential is almost negligible. Thus, for the kind of systems and processes studied in this paper the general recommendation is to use frequency-independent embedding potentials since this leads to less complicated model issues. However, larger effects are expected if the absorption bands of the environment are closer to that of the region treated using quantum mechanics.

Characterization of the Structural and Optical Properties of III-V Semiconductor Materials for Solar Cell Applications

NASA Astrophysics Data System (ADS)

Xie, Hongen

The work contained in this dissertation is focused on the structural and optical properties of III-V semiconductor structures for solar cell applications. By using transmission electron microscopy, many of their structural properties have been investigated, including morphology, defects, and strain relaxation. The optical properties of the semiconductor structures have been studied by photoluminescence and cathodoluminescence. Part of this work is focused on InAs quantum dots (QDs) embedded in AlGaAs matrices. This QD system is important for the realization of intermediate-band solar cells, which has three light absorption paths for high efficiency photovoltaics. The suppression of plastic strain relaxation in the QDs shows a significant improvement of the optoelectronic properties. A partial capping followed by a thermal annealing step is used to achieve spool-shaped QDs with a uniform height following the thickness of the capping layer. This step keeps the height of the QDs below a critical value that is required for plastic relaxation. The spool-shaped QDs exhibit two photoluminescence peaks that are attributed to ground and excited state transitions. The luminescence peak width is associated with the QD diameter distribution. An InAs cover layer formed during annealing is found responsible for the loss of the confinement of the excited states in smaller QDs. The second part of this work is focused on the investigation of the In xGa1-xN thin films having different bandgaps for double-junction solar cells. InxGa1-xN films with x ≤ 0.15 were grown by metal organic chemical vapor deposition. The defects in films with different indium contents have been studied. Their effect on the optical properties of the film have been investigated by cathodoluminescence. InxGa 1-xN films with indium contents higher than 20% were grown by molecular beam epitaxy. The strain relaxation in the films has been measured from electron diffraction patterns taken in cross-sectional TEM specimens. Moire fringes in some of the films reveal interfacial strain relaxation that is explained by a critical thickness model.

Linearly polarized emission from an embedded quantum dot using nanowire morphology control.

PubMed

Foster, Andrew P; Bradley, John P; Gardner, Kirsty; Krysa, Andrey B; Royall, Ben; Skolnick, Maurice S; Wilson, Luke R

2015-03-11

GaAs nanowires with elongated cross sections are formed using a catalyst-free growth technique. This is achieved by patterning elongated nanoscale openings within a silicon dioxide growth mask on a (111)B GaAs substrate. It is observed that MOVPE-grown vertical nanowires with cross section elongated in the [21̅1̅] and [1̅12] directions remain faithful to the geometry of the openings. An InGaAs quantum dot with weak radial confinement is realized within each nanowire by briefly introducing indium into the reactor during nanowire growth. Photoluminescence emission from an embedded nanowire quantum dot is strongly linearly polarized (typically >90%) with the polarization direction coincident with the axis of elongation. Linearly polarized PL emission is a result of embedding the quantum dot in an anisotropic nanowire structure that supports a single strongly confined, linearly polarized optical mode. This research provides a route to the bottom-up growth of linearly polarized single photon sources of interest for quantum information applications.

InAs(PSb)-based ``W'' quantum well laser diodes emitting near 3.3 μm

NASA Astrophysics Data System (ADS)

Joullié, A.; Skouri, E. M.; Garcia, M.; Grech, P.; Wilk, A.; Christol, P.; Baranov, A. N.; Behres, A.; Kluth, J.; Stein, A.; Heime, K.; Heuken, M.; Rushworth, S.; Hulicius, E.; Simecek, T.

2000-05-01

Mid-infrared laser diodes with an active region consisting of five "W" InAsSb/InAsP/InAsSb/InAsPSb quantum wells and broad InAsPSb waveguide were fabricated by metalorganic vapor phase epitaxy on InAs substrates. Laser emission was demonstrated at 3.3 μm up to 135 K from asymmetrical structures having n-type InAsPSb and p-type InPSb cladding layers. The devices operated in pulsed regime at 3.3 μm, with a lowest threshold current density of 120 A/cm2 at 90 K, and an output power efficiency of 31 mW/facet/A. The characteristic temperature was 35 K.

David Adler Lectureship Award Talk: III-V Semiconductor Nanowires on Silicon for Future Devices

NASA Astrophysics Data System (ADS)

Riel, Heike

Bottom-up grown nanowires are very attractive materials for direct integration of III-V semiconductors on silicon thus opening up new possibilities for the design and fabrication of nanoscale devices for electronic, optoelectronic as well as quantum information applications. Template-Assisted Selective Epitaxy (TASE) allows the well-defined and monolithic integration of complex III-V nanostructures and devices on silicon. Achieving atomically abrupt heterointerfaces, high crystal quality and control of dimension down to 1D nanowires enabled the demonstration of FETs and tunnel devices based on In(Ga)As and GaSb. Furthermore, the strong influence of strain on nanowires as well as results on quantum transport studies of InAs nanowires with well-defined geometry will be presented.

Low-density InP-based quantum dots emitting around the 1.5 μm telecom wavelength range

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yacob, M.; Reithmaier, J. P.; Benyoucef, M., E-mail: m.benyoucef@physik.uni-kassel.de

The authors report on low-density InAs quantum dots (QDs) grown on AlGaInAs surfaces lattice matched to InP using post-growth annealing by solid-source molecular beam epitaxy. Clearly spatially separated QDs with a dot density of about 5 × 10{sup 8} cm{sup −2} are obtained by using a special capping technique after the dot formation process. High-resolution micro-photoluminescence performed on optimized QD structures grown on distributed Bragg reflector exhibits single QD emissions around 1.5 μm with narrow excitonic linewidth below 50 μeV, which can be used as single photon source in the telecom wavelength range.

Tuning exciton energy and fine-structure splitting in single InAs quantum dots by applying uniaxial stress

DOE Office of Scientific and Technical Information (OSTI.GOV)

Su, Dan; Dou, Xiuming; Wu, Xuefei

2016-04-15

Exciton and biexciton emission energies as well as excitonic fine-structure splitting (FSS) in single InAs/GaAs quantum dots (QDs) have been continuously tuned in situ in an optical cryostat using a developed uniaxial stress device. With increasing tensile stress, the red shift of excitonic emission is up to 5 nm; FSS decreases firstly and then increases monotonically, reaching a minimum value of approximately 10 μeV; biexciton binding energy decreases from 460 to 106 μeV. This technique provides a simple and convenient means to tune QD structural symmetry, exciton energy and biexciton binding energy and can be used for generating entangled andmore » indistinguishable photons.« less

Complementary spin transistor using a quantum well channel.

PubMed

Park, Youn Ho; Choi, Jun Woo; Kim, Hyung-Jun; Chang, Joonyeon; Han, Suk Hee; Choi, Heon-Jin; Koo, Hyun Cheol

2017-04-20

In order to utilize the spin field effect transistor in logic applications, the development of two types of complementary transistors, which play roles of the n- and p-type conventional charge transistors, is an essential prerequisite. In this research, we demonstrate complementary spin transistors consisting of two types of devices, namely parallel and antiparallel spin transistors using InAs based quantum well channels and exchange-biased ferromagnetic electrodes. In these spin transistors, the magnetization directions of the source and drain electrodes are parallel or antiparallel, respectively, depending on the exchange bias field direction. Using this scheme, we also realize a complementary logic operation purely with spin transistors controlled by the gate voltage, without any additional n- or p-channel transistor.

Time-dependent wave packet simulations of transport through Aharanov-Bohm rings with an embedded quantum dot.

PubMed

Kreisbeck, C; Kramer, T; Molina, R A

2017-04-20

We have performed time-dependent wave packet simulations of realistic Aharonov-Bohm (AB) devices with a quantum dot embedded in one of the arms of the interferometer. The AB ring can function as a measurement device for the intrinsic transmission phase through the quantum dot, however, care has to be taken in analyzing the influence of scattering processes in the junctions of the interferometer arms. We consider a harmonic quantum dot and show how the Darwin-Fock spectrum emerges as a unique pattern in the interference fringes of the AB oscillations.

On the size and temperature dependence of the energy gap in cadmium-selenide quantum dots embedded in fluorophosphate glasses

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lipatova, Zh. O., E-mail: zluka-yo@mail.ru; Kolobkova, E. V.; Babkina, A. N.

2017-03-15

The temperature and size dependences of the energy gap in CdSe quantum dots with diameters of 2.4, 4.0, and 5.2 nm embedded in fluorophosphate glasses are investigated. It is shown that the temperature coefficient of the band gap dE{sub g}/dT in the quantum dots differs from the bulk value and depends strictly on the dot size. It is found that, furthermore, the energy of each transition in these quantum dots is characterized by an individual temperature coefficient dE/dT.

Comparison of coherently coupled multi-cavity and quantum dot embedded single cavity systems.

PubMed

Kocaman, Serdar; Sayan, Gönül Turhan

2016-12-12

Temporal group delays originating from the optical analogue to electromagnetically induced transparency (EIT) are compared in two systems. Similar transmission characteristics are observed between a coherently coupled high-Q multi-cavity array and a single quantum dot (QD) embedded cavity in the weak coupling regime. However, theoretically generated group delay values for the multi-cavity case are around two times higher. Both configurations allow direct scalability for chip-scale optical pulse trapping and coupled-cavity quantum electrodynamics (QED).

Slowly inactivating component of Na+ current in peri-somatic region of hippocampal CA1 pyramidal neurons

PubMed Central

Park, Yul Young; Johnston, Daniel

2013-01-01

The properties of voltage-gated ion channels on the neuronal membrane shape electrical activity such as generation and backpropagation of action potentials, initiation of dendritic spikes, and integration of synaptic inputs. Subthreshold currents mediated by sodium channels are of interest because of their activation near rest, slow inactivation kinetics, and consequent effects on excitability. Modulation of these currents can also perturb physiological responses of a neuron that might underlie pathological states such as epilepsy. Using nucleated patches from the peri-somatic region of hippocampal CA1 neurons, we recorded a slowly inactivating component of the macroscopic Na+ current (which we have called INaS) that shared many biophysical properties with the persistent Na+ current, INaP, but showed distinctively faster inactivating kinetics. Ramp voltage commands with a velocity of 400 mV/s were found to elicit this component of Na+ current reliably. INaS also showed a more hyperpolarized I-V relationship and slower inactivation than those of the fast transient Na+ current (INaT) recorded in the same patches. The peak amplitude of INaS was proportional to the peak amplitude of INaT but was much smaller in amplitude. Hexanol, riluzole, and ranolazine, known Na+ channel blockers, were tested to compare their effects on both INaS and INaT. The peak conductance of INaS was preferentially blocked by hexanol and riluzole, but the shift of half-inactivation voltage (V1/2) was only observed in the presence of riluzole. Current-clamp measurements with hexanol suggested that INaS was involved in generation of an action potential and in upregulation of neuronal excitability. PMID:23236005

Quantum Optimization of Fully Connected Spin Glasses

NASA Astrophysics Data System (ADS)

Venturelli, Davide; Mandrà, Salvatore; Knysh, Sergey; O'Gorman, Bryan; Biswas, Rupak; Smelyanskiy, Vadim

2015-07-01

Many NP-hard problems can be seen as the task of finding a ground state of a disordered highly connected Ising spin glass. If solutions are sought by means of quantum annealing, it is often necessary to represent those graphs in the annealer's hardware by means of the graph-minor embedding technique, generating a final Hamiltonian consisting of coupled chains of ferromagnetically bound spins, whose binding energy is a free parameter. In order to investigate the effect of embedding on problems of interest, the fully connected Sherrington-Kirkpatrick model with random ±1 couplings is programmed on the D-Wave TwoTM annealer using up to 270 qubits interacting on a Chimera-type graph. We present the best embedding prescriptions for encoding the Sherrington-Kirkpatrick problem in the Chimera graph. The results indicate that the optimal choice of embedding parameters could be associated with the emergence of the spin-glass phase of the embedded problem, whose presence was previously uncertain. This optimal parameter setting allows the performance of the quantum annealer to compete with (and potentially outperform, in the absence of analog control errors) optimized simulated annealing algorithms.

Quantum-Assisted Learning of Hardware-Embedded Probabilistic Graphical Models

NASA Astrophysics Data System (ADS)

Benedetti, Marcello; Realpe-Gómez, John; Biswas, Rupak; Perdomo-Ortiz, Alejandro

2017-10-01

Mainstream machine-learning techniques such as deep learning and probabilistic programming rely heavily on sampling from generally intractable probability distributions. There is increasing interest in the potential advantages of using quantum computing technologies as sampling engines to speed up these tasks or to make them more effective. However, some pressing challenges in state-of-the-art quantum annealers have to be overcome before we can assess their actual performance. The sparse connectivity, resulting from the local interaction between quantum bits in physical hardware implementations, is considered the most severe limitation to the quality of constructing powerful generative unsupervised machine-learning models. Here, we use embedding techniques to add redundancy to data sets, allowing us to increase the modeling capacity of quantum annealers. We illustrate our findings by training hardware-embedded graphical models on a binarized data set of handwritten digits and two synthetic data sets in experiments with up to 940 quantum bits. Our model can be trained in quantum hardware without full knowledge of the effective parameters specifying the corresponding quantum Gibbs-like distribution; therefore, this approach avoids the need to infer the effective temperature at each iteration, speeding up learning; it also mitigates the effect of noise in the control parameters, making it robust to deviations from the reference Gibbs distribution. Our approach demonstrates the feasibility of using quantum annealers for implementing generative models, and it provides a suitable framework for benchmarking these quantum technologies on machine-learning-related tasks.

Characterization of airborne ice-nucleation-active bacteria and bacterial fragments

NASA Astrophysics Data System (ADS)

Šantl-Temkiv, Tina; Sahyoun, Maher; Finster, Kai; Hartmann, Susan; Augustin-Bauditz, Stefanie; Stratmann, Frank; Wex, Heike; Clauss, Tina; Nielsen, Niels Woetmann; Sørensen, Jens Havskov; Korsholm, Ulrik Smith; Wick, Lukas Y.; Karlson, Ulrich Gosewinkel

2015-05-01

Some bacteria have the unique capacity of synthesising ice-nucleation-active (INA) proteins and exposing them at their outer membrane surface. As INA bacteria enter the atmosphere, they may impact the formation of clouds and precipitation. We studied members of airborne bacterial communities for their capacity to catalyse ice formation and we report on the excretion of INA proteins by airborne Pseudomonas sp. We also observed for the first time that INA biological fragments <220 nm were present in precipitation samples (199 and 482 INA fragments per L of precipitation), which confirms the presence of submicron INA biological fragments in the atmosphere. During 14 precipitation events, strains affiliated with the genus Pseudomonas, which are known to carry ina genes, were dominant. A screening for INA properties revealed that ∼12% of the cultivable bacteria caused ice formation at ≤-7 °C. They had likely been emitted to the atmosphere from terrestrial surfaces, e.g. by convective transport. We tested the ability of isolated INA strains to produce outer membrane vesicles and found that two isolates could do so. However, only very few INA vesicles were released per INA cell. Thus, the source of the submicron INA proteinaceous particles that we detected in the atmosphere remains to be elucidated.

Time reversal and charge conjugation in an embedding quantum simulator.

PubMed

Zhang, Xiang; Shen, Yangchao; Zhang, Junhua; Casanova, Jorge; Lamata, Lucas; Solano, Enrique; Yung, Man-Hong; Zhang, Jing-Ning; Kim, Kihwan

2015-08-04

A quantum simulator is an important device that may soon outperform current classical computations. A basic arithmetic operation, the complex conjugate, however, is considered to be impossible to be implemented in such a quantum system due to the linear character of quantum mechanics. Here, we present the experimental quantum simulation of such an unphysical operation beyond the regime of unitary and dissipative evolutions through the embedding of a quantum dynamics in the electronic multilevels of a (171)Yb(+) ion. We perform time reversal and charge conjugation, which are paradigmatic examples of antiunitary symmetry operators, in the evolution of a Majorana equation without the tomographic knowledge of the evolving state. Thus, these operations can be applied regardless of the system size. Our approach offers the possibility to add unphysical operations to the toolbox of quantum simulation, and provides a route to efficiently compute otherwise intractable quantities, such as entanglement monotones.

Time reversal and charge conjugation in an embedding quantum simulator

PubMed Central

Zhang, Xiang; Shen, Yangchao; Zhang, Junhua; Casanova, Jorge; Lamata, Lucas; Solano, Enrique; Yung, Man-Hong; Zhang, Jing-Ning; Kim, Kihwan

2015-01-01

A quantum simulator is an important device that may soon outperform current classical computations. A basic arithmetic operation, the complex conjugate, however, is considered to be impossible to be implemented in such a quantum system due to the linear character of quantum mechanics. Here, we present the experimental quantum simulation of such an unphysical operation beyond the regime of unitary and dissipative evolutions through the embedding of a quantum dynamics in the electronic multilevels of a 171Yb+ ion. We perform time reversal and charge conjugation, which are paradigmatic examples of antiunitary symmetry operators, in the evolution of a Majorana equation without the tomographic knowledge of the evolving state. Thus, these operations can be applied regardless of the system size. Our approach offers the possibility to add unphysical operations to the toolbox of quantum simulation, and provides a route to efficiently compute otherwise intractable quantities, such as entanglement monotones. PMID:26239028

Loop Quantization and Symmetry: Configuration Spaces

NASA Astrophysics Data System (ADS)

Fleischhack, Christian

2018-06-01

Given two sets S 1, S 2 and unital C *-algebras A_1, A_2 of functions thereon, we show that a map {σ : {S}_1 \\longrightarrow {S}_2} can be lifted to a continuous map \\barσ : spec A_1 \\longrightarrow spec A_2 iff σ^\\ast A_2 := σ^\\ast f | f \\in A_2 \\subseteq A_1. Moreover, \\bar σ is unique if existing, and injective iff σ^\\ast A_2 is dense. Then, we apply these results to loop quantum gravity and loop quantum cosmology. For all usual technical conventions, we decide whether the cosmological quantum configuration space is embedded into the gravitational one; indeed, both are spectra of some C *-algebras, say, A_cosm and A_grav, respectively. Typically, there is no embedding, but one can always get an embedding by the defining A_cosm := C^\\ast(σ^\\ast A_grav), where {σ} denotes the embedding between the classical configuration spaces. Finally, we explicitly determine {C^\\ast(σ^\\ast A_grav) in the homogeneous isotropic case for A_grav generated by the matrix functions of parallel transports along analytic paths. The cosmological quantum configuration space so equals the disjoint union of R and the Bohr compactification of R, appropriately glued together.

Loop Quantization and Symmetry: Configuration Spaces

NASA Astrophysics Data System (ADS)

Fleischhack, Christian

2018-04-01

Given two sets S 1, S 2 and unital C *-algebras A_1, A_2 of functions thereon, we show that a map σ : S_1 \\longrightarrow S_2 can be lifted to a continuous map \\barσ : spec A_1 \\longrightarrow spec A_2 iff σ^\\ast A_2 := σ^\\ast f | f \\in A_2 \\subseteq A_1. Moreover, \\bar σ is unique if existing, and injective iff {σ^\\ast A_2 is dense. Then, we apply these results to loop quantum gravity and loop quantum cosmology. For all usual technical conventions, we decide whether the cosmological quantum configuration space is embedded into the gravitational one; indeed, both are spectra of some C *-algebras, say, A_cosm and A_grav, respectively. Typically, there is no embedding, but one can always get an embedding by the defining A_cosm := C^\\ast(σ^\\ast A_grav), where σ denotes the embedding between the classical configuration spaces. Finally, we explicitly determine C^\\ast(σ^\\ast A_grav) in the homogeneous isotropic case for A_grav generated by the matrix functions of parallel transports along analytic paths. The cosmological quantum configuration space so equals the disjoint union of R and the Bohr compactification of R , appropriately glued together.

Magnetoelectric effect in concentric quantum rings induced by shallow donor

NASA Astrophysics Data System (ADS)

Escorcia, R.; García, L. F.; Mikhailov, I. D.

2018-05-01

We study the alteration of the magnetic and electric properties induced by the off-axis donor in a double InAs/GaAs concentric quantum ring. To this end we consider a model of an axially symmetrical ring-like nanostructure with double rim, in which the thickness of the InAs thin layer is varied smoothly in the radial direction. The energies and of contour plots of the density of charge for low-lying levels we find by using the adiabatic approximation and the double Fourier-Bessel series expansion method and the Kane model. Our results reveal a possibility of the formation of a giant dipole momentum induced by the in-plane electric field, which in addition can be altered by of the external magnetic field applied along the symmetry axis.

Temperature quenching of spontaneous emission in tunnel-injection nanostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Talalaev, V. G., E-mail: vadimtalalaev@yandex.com; Novikov, B. V.; Cirlin, G. E.

2015-11-15

The spontaneous-emission spectra in the near-IR range (0.8–1.3 μm) from inverted tunnel-injection nanostructures are measured. These structures contain an InAs quantum-dot layer and an InGaAs quantum-well layer, separated by GaAs barrier spacer whose thickness varies in the range 3–9 nm. The temperature dependence of this emission in the range 5–295 K is investigated, both for optical excitation (photoluminescence) and for current injection in p–n junction (electroluminescence). At room temperature, current pumping proves more effective for inverted tunnel-injection nanostructures with a thin barrier (<6 nm), when the apexes of the quantum dots connect with the quantum well by narrow InGaAs strapsmore » (nanobridges). In that case, the quenching of the electroluminescence by heating from 5 to 295 K is slight. The quenching factor S{sub T} of the integrated intensity I is S{sub T} = I{sub 5}/I{sub 295} ≈ 3. The temperature stability of the emission from inverted tunnel-injection nanostructures is discussed on the basis of extended Arrhenius analysis.« less

Metamorphic quantum dots: Quite different nanostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seravalli, L.; Frigeri, P.; Nasi, L.

In this work, we present a study of InAs quantum dots deposited on InGaAs metamorphic buffers by molecular beam epitaxy. By comparing morphological, structural, and optical properties of such nanostructures with those of InAs/GaAs quantum dot ones, we were able to evidence characteristics that are typical of metamorphic InAs/InGaAs structures. The more relevant are: the cross-hatched InGaAs surface overgrown by dots, the change in critical coverages for island nucleation and ripening, the nucleation of new defects in the capping layers, and the redshift in the emission energy. The discussion on experimental results allowed us to conclude that metamorphic InAs/InGaAs quantummore » dots are rather different nanostructures, where attention must be put to some issues not present in InAs/GaAs structures, namely, buffer-related defects, surface morphology, different dislocation mobility, and stacking fault energies. On the other hand, we show that metamorphic quantum dot nanostructures can provide new possibilities of tailoring various properties, such as dot positioning and emission energy, that could be very useful for innovative dot-based devices.« less

Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP

NASA Astrophysics Data System (ADS)

Wheatley, R.; Kesaria, M.; Mawst, L. J.; Kirch, J. D.; Kuech, T. F.; Marshall, A.; Zhuang, Q. D.; Krier, A.

2015-06-01

Extended wavelength photoluminescence emission within the technologically important 2-5 μm spectral range has been demonstrated from InAs1-xNx and In1-yGayAs1-xNx type I quantum wells grown onto InP. Samples containing N ˜ 1% and 2% exhibited 4 K photoluminescence emission at 2.0 and 2.7 μm, respectively. The emission wavelength was extended out to 2.9 μm (3.3 μm at 300 K) using a metamorphic buffer layer to accommodate the lattice mismatch. The quantum wells were grown by molecular beam epitaxy and found to be of a high structural perfection as evidenced in the high resolution x-ray diffraction measurements. The photoluminescence was more intense from the quantum wells grown on the metamorphic buffer layer and persisted up to room temperature. The mid-infrared emission spectra were analysed, and the observed transitions were found to be in good agreement with the calculated emission energies.

Longitudinal wave function control in single quantum dots with an applied magnetic field

PubMed Central

Cao, Shuo; Tang, Jing; Gao, Yunan; Sun, Yue; Qiu, Kangsheng; Zhao, Yanhui; He, Min; Shi, Jin-An; Gu, Lin; Williams, David A.; Sheng, Weidong; Jin, Kuijuan; Xu, Xiulai

2015-01-01

Controlling single-particle wave functions in single semiconductor quantum dots is in demand to implement solid-state quantum information processing and spintronics. Normally, particle wave functions can be tuned transversely by an perpendicular magnetic field. We report a longitudinal wave function control in single quantum dots with a magnetic field. For a pure InAs quantum dot with a shape of pyramid or truncated pyramid, the hole wave function always occupies the base because of the less confinement at base, which induces a permanent dipole oriented from base to apex. With applying magnetic field along the base-apex direction, the hole wave function shrinks in the base plane. Because of the linear changing of the confinement for hole wave function from base to apex, the center of effective mass moves up during shrinking process. Due to the uniform confine potential for electrons, the center of effective mass of electrons does not move much, which results in a permanent dipole moment change and an inverted electron-hole alignment along the magnetic field direction. Manipulating the wave function longitudinally not only provides an alternative way to control the charge distribution with magnetic field but also a new method to tune electron-hole interaction in single quantum dots. PMID:25624018

Longitudinal wave function control in single quantum dots with an applied magnetic field.

PubMed

Cao, Shuo; Tang, Jing; Gao, Yunan; Sun, Yue; Qiu, Kangsheng; Zhao, Yanhui; He, Min; Shi, Jin-An; Gu, Lin; Williams, David A; Sheng, Weidong; Jin, Kuijuan; Xu, Xiulai

2015-01-27

Controlling single-particle wave functions in single semiconductor quantum dots is in demand to implement solid-state quantum information processing and spintronics. Normally, particle wave functions can be tuned transversely by an perpendicular magnetic field. We report a longitudinal wave function control in single quantum dots with a magnetic field. For a pure InAs quantum dot with a shape of pyramid or truncated pyramid, the hole wave function always occupies the base because of the less confinement at base, which induces a permanent dipole oriented from base to apex. With applying magnetic field along the base-apex direction, the hole wave function shrinks in the base plane. Because of the linear changing of the confinement for hole wave function from base to apex, the center of effective mass moves up during shrinking process. Due to the uniform confine potential for electrons, the center of effective mass of electrons does not move much, which results in a permanent dipole moment change and an inverted electron-hole alignment along the magnetic field direction. Manipulating the wave function longitudinally not only provides an alternative way to control the charge distribution with magnetic field but also a new method to tune electron-hole interaction in single quantum dots.

Optimal Control of Objects on the Micro- and Nano-Scale by Electrokinetic and Electromagnetic Manipulation: for Bio-Sample Preparation, Quantum Information Devices and Magnetic Drug Delivery

DTIC Science & Technology

2010-01-01

property variations. The system described here is a simple 4-electrode microfluidic device made of polydimethylsiloxane PDMS [50-53] which is reversibly...through the fluid and heat it.) A more detailed description and analysis of the physics of electroosmotic actuation can be found in [46, 83] In...a control algorithm on a standard personal computer. The micro-fluidic device is made out of a soft polymer ( polydimethylsiloxane (PDMS)) and is

Enhancement-Mode Antimonide Quantum-Well MOSFETs With High Electron Mobility and Gigahertz Small-Signal Switching Performance

DTIC Science & Technology

2011-12-01

grown on GaAs by molecular beam epitaxy and the defect-free active device layers. Fig. 1(c) shows the quantitative mobility spec- trum analysis (QMSA...dielectric deposition. A Pd/Au gate metal was defined using e- beam lithography and 0741-3106/$26.00 © 2011 IEEE Report Documentation Page Form...2010, pp. 6.3.1–6.3.4. [2] N. Kharche, G. Klimeck, D. Kim, J. A. del Alamo, and M. Luisier, “Performance analysis of ultra-scaled InAs HEMTs ,” in IEDM

Electron and hole photoemission detection for band offset determination of tunnel field-effect transistor heterojunctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Wei; Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871; Zhang, Qin

2014-11-24

We report experimental methods to ascertain a complete energy band alignment of a broken-gap tunnel field-effect transistor based on an InAs/GaSb hetero-junction. By using graphene as an optically transparent electrode, both the electron and hole barrier heights at the InAs/GaSb interface can be quantified. For a Al{sub 2}O{sub 3}/InAs/GaSb layer structure, the barrier height from the top of the InAs and GaSb valence bands to the bottom of the Al{sub 2}O{sub 3} conduction band is inferred from electron emission whereas hole emissions reveal the barrier height from the top of the Al{sub 2}O{sub 3} valence band to the bottom ofmore » the InAs and GaSb conduction bands. Subsequently, the offset parameter at the broken gap InAs/GaSb interface is extracted and thus can be used to facilitate the development of predicted models of electron quantum tunneling efficiency and transistor performance.« less

Enhancing analog performance and suppression of subthreshold swing using hetero-junctionless double gate TFETs

NASA Astrophysics Data System (ADS)

Chauhan, Sudakar Singh; Sharma, Neha

2017-12-01

This paper proposes hetero-junctionless double gate tunnel field effect transistor (HJLDG-TFETs) for suppression of subthreshold swing (SS) using an InAs compound semiconductor material. The proposed device with high dielectric material, gives an excellent performance when InAs uses at source side. Because of low band gap of 0.36 eV , it reduces the potential barrier height of source channel interface causing higher band to band tunneling. Whereas, Si at the drain side with higher band gap of 1.12 eV , increasing the barrier height of drain channel interface causing lower quantum tunneling. As a result, the proposed device with high-k (HfO2) at 30 nm channel section provides a tremendous characteristics with high ION /IOFF ratio of 2 ×1011 , a point SS of 43.30 mV / decade and moderate SS of 56.75 mV / decade . All the above results show that the proposed device is assured for a low power switching application. The variation in gate supply voltage also analyzed for transconductance property of the device.

Structural, chemical, and magnetic properties of Fe films grown on InAs(100)

NASA Astrophysics Data System (ADS)

Ruppel, L.; Witte, G.; Wöll, Ch.; Last, T.; Fischer, S. F.; Kunze, U.

2002-12-01

The structure of epitaxial Fe films grown on an InAs(100)-c(8×2)/(4×2) surface has been studied in situ by means of low-energy electron diffraction and x-ray photoelectron spectroscopy, while their magnetic properties were characterized ex situ by superconducting quantum interference device magnetometry at temperatures of 5 300 K. Deposition of iron at room temperature or below leads to the formation of a thin iron arsenide layer that floats on the Fe film upon further deposition. Postdeposition annealing causes no significant improvement of the film structure but activates a further arsenic diffusion through the Fe film. Significant exchange-bias effects were found at low temperatures for insufficiently capped and partially oxidized Fe films, and are attributed to noncollinear spin order at the Ag capping layer/Fe interface. For perfect, nonoxidized Fe films, such a noncollinear spin order at the Fe/InAs interface is excluded as no thermomagnetic irreversibilities were found. This indicates that the spin order at the Fe/InAs interface is suitable for spin injection.

Gating of high-mobility InAs metamorphic heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shabani, J.; McFadden, A. P.; Shojaei, B.

We investigate the performance of gate-defined devices fabricated on high mobility InAs metamorphic heterostructures. We find that heterostructures capped with In{sub 0.75}Ga{sub 0.25}As often show signs of parallel conduction due to proximity of their surface Fermi level to the conduction band minimum. Here, we introduce a technique that can be used to estimate the density of this surface charge that involves cool-downs from room temperature under gate bias. We have been able to remove the parallel conduction under high positive bias, but achieving full depletion has proven difficult. We find that by using In{sub 0.75}Al{sub 0.25}As as the barrier withoutmore » an In{sub 0.75}Ga{sub 0.25}As capping, a drastic reduction in parallel conduction can be achieved. Our studies show that this does not change the transport properties of the quantum well significantly. We achieved full depletion in InAlAs capped heterostructures with non-hysteretic gating response suitable for fabrication of gate-defined mesoscopic devices.« less

Final Technical Report for Quantum Embedding for Correlated Electronic Structure in Large Systems and the Condensed Phase

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chan, Garnet Kin-Lic

2017-04-30

This is the final technical report. We briefly describe some selected results below. Developments in density matrix embedding. DMET is a quantum embedding theory that we introduced at the beginning of the last funding period, around 2012-2013. Since the first DMET papers, which demonstrated proof-of- principle calculations on the Hubbard model and hydrogen rings, we have carried out a number of different developments, including: Extending the DMET technology to compute broken symmetry phases, including magnetic phases and super- conductivity (Pub. 13); Calibrating the accuracy of DMET and its cluster size convergence against other methods, and formulation of a dynamical clustermore » analog (Pubs. 4, 10) (see Fig. 1); Implementing DMET for ab-initio molecular calculations, and exploring different self-consistency criteria (Pubs. 9, 14); Using embedding to defi ne quantum classical interfaces Pub. 2; Formulating DMET for spectral functions (Pub. 7) (see Fig. 1); Extending DMET to coupled fermion-boson problems (Pub. 12). Together with these embedding developments, we have also implemented a wide variety of impurity solvers within our DMET framework, including DMRG (Pub. 3), AFQMC (Pub. 10), and coupled cluster theory (CC) (Pub. 9).« less

Equal-Spin Andreev Reflection on Junctions of Spin-Resolved Quantum Hall Bulk State and Spin-Singlet Superconductor.

PubMed

Matsuo, Sadashige; Ueda, Kento; Baba, Shoji; Kamata, Hiroshi; Tateno, Mizuki; Shabani, Javad; Palmstrøm, Christopher J; Tarucha, Seigo

2018-02-22

The recent development of superconducting spintronics has revealed the spin-triplet superconducting proximity effect from a spin-singlet superconductor into a spin-polarized normal metal. In addition recently superconducting junctions using semiconductors are in demand for highly controlled experiments to engineer topological superconductivity. Here we report experimental observation of Andreev reflection in junctions of spin-resolved quantum Hall (QH) states in an InAs quantum well and the spin-singlet superconductor NbTi. The measured conductance indicates a sub-gap feature and two peaks on the outer side of the sub-gap feature in the QH plateau-transition regime increases. The observed structures can be explained by considering transport with Andreev reflection from two channels, one originating from equal-spin Andreev reflection intermediated by spin-flip processes and second arising from normal Andreev reflection. This result indicates the possibility to induce the superconducting proximity gap in the the QH bulk state, and the possibility for the development of superconducting spintronics in semiconductor devices.

Electron-Spin Filters Based on the Rashba Effect

NASA Technical Reports Server (NTRS)

Ting, David Z.-Y.; Cartoixa, Xavier; McGill, Thomas C.; Moon, Jeong S.; Chow, David H.; Schulman, Joel N.; Smith, Darryl L.

2004-01-01

Semiconductor electron-spin filters of a proposed type would be based on the Rashba effect, which is described briefly below. Electron-spin filters more precisely, sources of spin-polarized electron currents have been sought for research on, and development of, the emerging technological discipline of spintronics (spin-based electronics). There have been a number of successful demonstrations of injection of spin-polarized electrons from diluted magnetic semiconductors and from ferromagnetic metals into nonmagnetic semiconductors. In contrast, a device according to the proposal would be made from nonmagnetic semiconductor materials and would function without an applied magnetic field. The Rashba effect, named after one of its discoverers, is an energy splitting, of what would otherwise be degenerate quantum states, caused by a spin-orbit interaction in conjunction with a structural-inversion asymmetry in the presence of interfacial electric fields in a semiconductor heterostructure. The magnitude of the energy split is proportional to the electron wave number. The present proposal evolved from recent theoretical studies that suggested the possibility of devices in which electron energy states would be split by the Rashba effect and spin-polarized currents would be extracted by resonant quantum-mechanical tunneling. Accordingly, a device according to the proposal would be denoted an asymmetric resonant interband tunneling diode [a-RITD]. An a-RITD could be implemented in a variety of forms, the form favored in the proposal being a double-barrier heterostructure containing an asymmetric quantum well. It is envisioned that a-RITDs would be designed and fabricated in the InAs/GaSb/AlSb material system for several reasons: Heterostructures in this material system are strong candidates for pronounced Rashba spin splitting because InAs and GaSb exhibit large spin-orbit interactions and because both InAs and GaSb would be available for the construction of highly asymmetric quantum wells. This mate-rial system affords a variety of energy-band alignments that can be exploited to obtain resonant tunneling and other desired effects. The no-common-atom InAs/GaSb and InAs/AlSb interfaces would present opportunities for engineering interface potentials for optimizing Rashba spin splitting.

A novel metronidazole fluorescent nanosensor based on graphene quantum dots embedded silica molecularly imprinted polymer.

PubMed

Mehrzad-Samarin, Mina; Faridbod, Farnoush; Dezfuli, Amin Shiralizadeh; Ganjali, Mohammad Reza

2017-06-15

A novel optical nanosensor for detection of Metronidazole in biological samples was reported. Graphene quantum dots embedded silica molecular imprinted polymer (GQDs-embedded SMIP) was synthesized and used as a selective fluorescent probe for Metronidazole detection. The new synthesized GQDs-embedded SMIP showed strong fluorescent emission at 450nm excited at 365nm which quenched in presence of Metronidazole as a template molecule.. The quenching was proportional to the concentration of Metronidazole in a linear range of at least 0.2μM to 15μM. The limit of detection for metronidazole determination was obtained 0.15μM. The nanosensor successfully worked in plasma matrixes. Copyright © 2016 Elsevier B.V. All rights reserved.

Intermediate-band photosensitive device with quantum dots embedded in energy fence barrier

DOEpatents

Forrest, Stephen R.; Wei, Guodan

2010-07-06

A plurality of layers of a first semiconductor material and a plurality of dots-in-a-fence barriers disposed in a stack between a first electrode and a second electrode. Each dots-in-a-fence barrier consists essentially of a plurality of quantum dots of a second semiconductor material embedded between and in direct contact with two layers of a third semiconductor material. Wave functions of the quantum dots overlap as at least one intermediate band. The layers of the third semiconductor material are arranged as tunneling barriers to require a first electron and/or a first hole in a layer of the first material to perform quantum mechanical tunneling to reach the second material within a respective quantum dot, and to require a second electron and/or a second hole in a layer of the first semiconductor material to perform quantum mechanical tunneling to reach another layer of the first semiconductor material.

Quasistatic antiferromagnetism in the quantum wells of SmTiO3/SrTiO3 heterostructures

NASA Astrophysics Data System (ADS)

Need, Ryan F.; Marshall, Patrick B.; Kenney, Eric; Suter, Andreas; Prokscha, Thomas; Salman, Zaher; Kirby, Brian J.; Stemmer, Susanne; Graf, Michael J.; Wilson, Stephen D.

2018-03-01

High carrier density quantum wells embedded within a Mott insulating matrix present a rich arena for exploring unconventional electronic phase behavior ranging from non-Fermi-liquid transport and signatures of quantum criticality to pseudogap formation. Probing the proposed connection between unconventional magnetotransport and incipient electronic order within these quantum wells has however remained an enduring challenge due to the ultra-thin layer thicknesses required. Here we address this challenge by exploring the magnetic properties of high-density SrTiO3 quantum wells embedded within the antiferromagnetic Mott insulator SmTiO3 via muon spin relaxation and polarized neutron reflectometry measurements. The one electron per planar unit cell acquired by the nominal d0 band insulator SrTiO3 when embedded within a d1 Mott SmTiO3 matrix exhibits slow magnetic fluctuations that begin to freeze into a quasistatic spin state below a critical temperature T*. The appearance of this quasistatic well magnetism coincides with the previously reported opening of a pseudogap in the tunneling spectra of high carrier density wells inside this film architecture. Our data suggest a common origin of the pseudogap phase behavior in this quantum critical oxide heterostructure with those observed in bulk Mott materials close to an antiferromagnetic instability.

Solving Set Cover with Pairs Problem using Quantum Annealing

NASA Astrophysics Data System (ADS)

Cao, Yudong; Jiang, Shuxian; Perouli, Debbie; Kais, Sabre

2016-09-01

Here we consider using quantum annealing to solve Set Cover with Pairs (SCP), an NP-hard combinatorial optimization problem that plays an important role in networking, computational biology, and biochemistry. We show an explicit construction of Ising Hamiltonians whose ground states encode the solution of SCP instances. We numerically simulate the time-dependent Schrödinger equation in order to test the performance of quantum annealing for random instances and compare with that of simulated annealing. We also discuss explicit embedding strategies for realizing our Hamiltonian construction on the D-wave type restricted Ising Hamiltonian based on Chimera graphs. Our embedding on the Chimera graph preserves the structure of the original SCP instance and in particular, the embedding for general complete bipartite graphs and logical disjunctions may be of broader use than that the specific problem we deal with.

Baryon spectrum from superconformal quantum mechanics and its light-front holographic embedding

DOE PAGES

de Teramond, Guy F.; Dosch, Hans Gunter; Brodsky, Stanley J.

2015-02-27

We describe the observed light-baryon spectrum by extending superconformal quantum mechanics to the light front and its embedding in AdS space. This procedure uniquely determines the confinement potential for arbitrary half-integer spin. To this end, we show that fermionic wave equations in AdS space are dual to light-front supersymmetric quantum-mechanical bound-state equations in physical space-time. The specific breaking of conformal invariance explains hadronic properties common to light mesons and baryons, such as the observed mass pattern in the radial and orbital excitations, from the spectrum generating algebra. Lastly, the holographic embedding in AdS also explains distinctive and systematic features, suchmore » as the spin-J degeneracy for states with the same orbital angular momentum, observed in the light-baryon spectrum.« less

An improved quantum watermarking scheme using small-scale quantum circuits and color scrambling

NASA Astrophysics Data System (ADS)

Li, Panchi; Zhao, Ya; Xiao, Hong; Cao, Maojun

2017-05-01

In order to solve the problem of embedding the watermark into the quantum color image, in this paper, an improved scheme of using small-scale quantum circuits and color scrambling is proposed. Both color carrier image and color watermark image are represented using novel enhanced quantum representation. The image sizes for carrier and watermark are assumed to be 2^{n+1}× 2^{n+2} and 2n× 2n, respectively. At first, the color of pixels in watermark image is scrambled using the controlled rotation gates, and then, the scrambled watermark with 2^n× 2^n image size and 24-qubit gray scale is expanded to an image with 2^{n+1}× 2^{n+2} image size and 3-qubit gray scale. Finally, the expanded watermark image is embedded into the carrier image by the controlled-NOT gates. The extraction of watermark is the reverse process of embedding it into carrier image, which is achieved by applying operations in the reverse order. Simulation-based experimental results show that the proposed scheme is superior to other similar algorithms in terms of three items, visual quality, scrambling effect of watermark image, and noise resistibility.

On-chip interference of single photons from an embedded quantum dot and an external laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prtljaga, N., E-mail: n.prtljaga@sheffield.ac.uk; Bentham, C.; O'Hara, J.

2016-06-20

In this work, we demonstrate the on-chip two-photon interference between single photons emitted by a single self-assembled InGaAs quantum dot and an external laser. The quantum dot is embedded within one arm of an air-clad directional coupler which acts as a beam-splitter for incoming light. Photons originating from an attenuated external laser are coupled to the second arm of the beam-splitter and then combined with the quantum dot photons, giving rise to two-photon quantum interference between dissimilar sources. We verify the occurrence of on-chip Hong-Ou-Mandel interference by cross-correlating the optical signal from the separate output ports of the directional coupler.more » This experimental approach allows us to use a classical light source (laser) to assess in a single step the overall device performance in the quantum regime and probe quantum dot photon indistinguishability on application realistic time scales.« less

A simple method for constructing the inhomogeneous quantum group IGLq(n) and its universal enveloping algebra Uq(igl(n))

NASA Astrophysics Data System (ADS)

Shariati, A.; Aghamohammadi, A.

1995-12-01

We propose a simple and concise method to construct the inhomogeneous quantum group IGLq(n) and its universal enveloping algebra Uq(igl(n)). Our technique is based on embedding an n-dimensional quantum space in an n+1-dimensional one as the set xn+1=1. This is possible only if one considers the multiparametric quantum space whose parameters are fixed in a specific way. The quantum group IGLq(n) is then the subset of GLq(n+1), which leaves the xn+1=1 subset invariant. For the deformed universal enveloping algebra Uq(igl(n)), we will show that it can also be embedded in Uq(gl(n+1)), provided one uses the multiparametric deformation of U(gl(n+1)) with a specific choice of its parameters.

Interplay of Collective Excitations in Quantum Well Intersubband Resonances

NASA Technical Reports Server (NTRS)

Li, Jian-Zhong; Ning, C. Z.

2003-01-01

Intersubband resonances in a semiconductor quantum well (QW) display some of the most fascinating features involving various collective excitations such as Fermi-edge singularity (FES) and intersubband plasmon (ISP). Using a density matrix approach, we treated many-body effects such as depolarization, vertex correction, and self-energy consistently for a two-subband system. We found a systematic change in resonance spectra from FES-dominated to ISP-dominated features, as QW- width or electron density is varied. Such an interplay between FES and ISP significantly changes both line shape and peak position of the absorption spectrum. In particular, we found that a cancellation of FES and ISP undresses the resonant responses and recovers the single-particle features of absorption for semiconductors with a strong nonparabolicity such as InAs, leading to a dramatic broadening of the absorption spectrum.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baidus, N. V.; Kukushkin, V. A., E-mail: vakuk@appl.sci-nnov.ru; Zvonkov, B. N.

As a result of theoretical and experimental analyses, the parameters of heterostructures with InAs quantum dots in a GaAs matrix are determined, which provide the development of high-speed and efficient plasmon-polariton near-infrared light-emitting Schottky diodes based on such structures. The quantum dots should be arranged on a heavily doped (to a dopant concentration of 10{sup 19} cm{sup –3}) GaAs buffer layer and be separated from the metal by a thin (10–30 nm thick) undoped GaAs cap layer. The interface between the metal (e.g., gold) and GaAs provides the efficient scattering of surface plasmon-polaritons to ordinary photons if it contains inhomogeneitiesmore » shaped as metal-filled cavities with a characteristic size of ~30 nm and a surface concentration above 10{sup 10} cm{sup –2}.« less

LPE growth and characterization of InAs1-xNx films

NASA Astrophysics Data System (ADS)

Lv, Y. F.; Hu, S. H.; Yang, X. Y.; Wang, Y.; Sun, C. H.; Qiu, F.; Cong, R.; Dong, W. J.; Zhang, Y.; Yu, G. L.; Dai, N.

2014-07-01

A series of InAs1-xNx films have been successfully grown on (100) oriented InAs substrates by liquid phase epitaxy technique. Samples with different nitrogen contents have been analyzed by high-resolution x-ray diffraction measurement, which confirms the incorporation of N in the epilayers. N-related modes are detected in the Raman spectra of InAs1-xNx epilayers. The fundamental absorption edges of InAs1-xNx films obtained by Fourier transform infrared transmission spectroscopy exhibit a red-shift compared with that of InAs homoepilayer.

Microbial production of ice crystals in clouds as a novel atmospheric biosignature

NASA Astrophysics Data System (ADS)

Santl-Temkiv, T.; Sahyoun, M.; Kjeldsen, H.; Ling, M.; Boesen, T.; Karlson, U. G.; Finster, K.

2014-03-01

A diverse assembly of exoplanets has been discovered during recent decades (Howard 2013), their atmospheres providing some of the most accessible evidence for the presence of biological activity on these planets. Metabolic gases have been commonly proposed as atmospheric biosignatures (Seager et al 2012). However, airborne microbes are also involved in cloud- and precipitation formation on Earth. Thus, meteorological phenomena may serve as alternative atmospheric biosignatures, for which appropriate observational techniques have yet to be developed. The atmospheric part of the Earth's water cycle heavily relies on the presence of nucleating particles, which promote the condensation and freezing of atmospheric water, both potentially leading to precipitation. While cloud condensation nuclei are diverse and relatively common, ice nuclei are poorly understood and comparably rare airborne particles. According to current knowledge, most ice nucleation below ñ15∞C is driven by the presence of inorganic dust particles, which are considered inactive at higher temperatures. Biogenic IN are the only reported particles that promote ice formation above ñ10∞C. Some bacteria, e.g. Pseudomonas syringae, produce Ice Nucleation Active (INA) proteins that are most efficient ice nuclei currently known. These INA bacteria are common in the atmosphere, and may thus be involved in precipitation processes of mixed phase clouds (Möhler et al 2007). We investigate the relevance of bacterial INA proteins for atmospheric processes using three approaches: (i) study of the presence of INA bacteria and their INA proteins in the atmosphere, (ii) a detailed molecular and physical study of isolated INA proteins, and finally (iii) a modeling study of the importance of INA proteins for ice-path in clouds as well as their importance for precipitation. During 14 precipitation events, we observed that 12% of isolated bacteria carried INA genes. INA bacteria had likely been emitted to the atmosphere from terrestrial surfaces, e.g. by convective transport. Additionally, we found INA biological fragments <220 nm in two precipitation samples (199, 482 INA per L), which indicates that in addition to intact cells, bacterial fragments that are more abundant than cells could also impact atmospheric processes. In order to study isolated INA proteins, we sequenced the INA gene from one of the isolated bacteria, Pseudomonas sp. R10.79. The INA gene will be expressed, purified and introduced into nano-discs. These INA nano-discs will facilitate a detailed molecular and physical study of INA proteins and its ice active properties. Most of modeling approaches rely on parameterizations based on classical nucleation theory, e.g. CH08 (Chen et al 2008), when introducing INA bacteria into climate models. Instead, we used an experimentally derived parameterization HAR13 (Hartmann et al 2013), when introducing bacteria into a 1-d operational weather forecast model HIRLAM (Unden et al 2002). By comparison HAR13 yields more ice and is more sensitive to the change of bacterial densities than CH08. While CH08 is a function of the size of the ice nuclei, HAR13 is a function of the number of INA protein complexes. INA protein complexes are the locations where the nucleation occurs and their number appears to be a more important parameter than cell size. We suggest that the study of individual INA proteins complexes both alone and on cell surfaces will lead to a better understanding of ice nucleation by INA bacteria.

Surface plasmon-enhanced light-emitting diodes using silver nanoparticles embedded in p-GaN.

PubMed

Cho, Chu-Young; Kwon, Min-Ki; Lee, Sang-Jun; Han, Sang-Heon; Kang, Jang-Won; Kang, Se-Eun; Lee, Dong-Yul; Park, Seong-Ju

2010-05-21

We demonstrate the surface plasmon-enhanced blue light-emitting diodes (LEDs) using Ag nanoparticles embedded in p-GaN. A large increase in optical output power of 38% is achieved at an injection current of 20 mA due to an improved internal quantum efficiency of the LEDs. The enhancement of optical output power is dependent on the density of the Ag nanoparticles. This improvement can be attributed to an increase in the spontaneous emission rate through resonance coupling between the excitons in multiple quantum wells and localized surface plasmons in Ag nanoparticles embedded in p-GaN.

High ice nucleation activity located in blueberry stem bark is linked to primary freeze initiation and adaptive freezing behaviour of the bark

PubMed Central

Kishimoto, Tadashi; Yamazaki, Hideyuki; Saruwatari, Atsushi; Murakawa, Hiroki; Sekozawa, Yoshihiko; Kuchitsu, Kazuyuki; Price, William S.; Ishikawa, Masaya

2014-01-01

Controlled ice nucleation is an important mechanism in cold-hardy plant tissues for avoiding excessive supercooling of the protoplasm, for inducing extracellular freezing and/or for accommodating ice crystals in specific tissues. To understand its nature, it is necessary to characterize the ice nucleation activity (INA), defined as the ability of a tissue to induce heterogeneous ice nucleation. Few studies have addressed the precise localization of INA in wintering plant tissues in respect of its function. For this purpose, we recently revised a test tube INA assay and examined INA in various tissues of over 600 species. Extremely high levels of INA (−1 to −4 °C) in two wintering blueberry cultivars of contrasting freezing tolerance were found. Their INA was much greater than in other cold-hardy species and was found to be evenly distributed along the stems of the current year's growth. Concentrations of active ice nuclei in the stem were estimated from quantitative analyses. Stem INA was localized mainly in the bark while the xylem and pith had much lower INA. Bark INA was located mostly in the cell wall fraction (cell walls and intercellular structural components). Intracellular fractions had much less INA. Some cultivar differences were identified. The results corresponded closely with the intrinsic freezing behaviour (extracellular freezing) of the bark, icicle accumulation in the bark and initial ice nucleation in the stem under dry surface conditions. Stem INA was resistant to various antimicrobial treatments. These properties and specific localization imply that high INA in blueberry stems is of intrinsic origin and contributes to the spontaneous initiation of freezing in extracellular spaces of the bark by acting as a subfreezing temperature sensor. PMID:25082142

Ranolazine vs phenytoin: greater effect of ranolazine on the transient Na(+) current than on the persistent Na(+) current in central neurons.

PubMed

Terragni, Benedetta; Scalmani, Paolo; Colombo, Elisa; Franceschetti, Silvana; Mantegazza, Massimo

2016-11-01

Voltage-gated Na(+) channels (NaV) are involved in pathologies and are important targets of drugs (NaV-blockers), e.g. some anti-epileptic drugs (AEDs). Besides the fast inactivating transient Na(+) current (INaT), they generate a slowly inactivating "persistent" current (INaP). Ranolazine, a NaV-blocker approved for treatment of angina pectoris, is considered a preferential inhibitor of INaP and has been proposed as a novel AED. Although it is thought that classic NaV-blockers used as AEDs target mainly INaT, they can also reduce INaP. It is important to disclose specific features of novel NaV-blockers, which could be necessary for their effect as AEDs in drug resistant patients. We have compared the action of ranolazine and of the classic AED phenytoin in transfected cells expressing the neuronal NaV1.1 Na(+) channel and in neurons of neocortical slices. Our results show that the relative block of INaT versus INaP of ranolazine and phenytoin is variable and depends on Na(+) current activation conditions. Strikingly, ranolazine blocks with less efficacy INaP and more efficacy INaT than phenytoin in conditions mimicking pathological states (i.e. high frequency firing and long lasting depolarizations). The effects are consistent with binding of ranolazine to both open/pre-open and inactivated states; larger INaT block at high stimulation frequencies is caused by the induction of a slow inactivated state. Thus, contrary than expected, ranolazine is not a better INaP blocker than phenytoin in central neurons, and phenytoin is not a better INaT blocker than ranolazine. Nevertheless, they show a complementary action and could differentially target specific pathological dysfunctions. Copyright © 2016 Elsevier Ltd. All rights reserved.

Thermo-optical characterization of cadmium selenide/zinc sulfide (CdSe/ZnS) quantum dots embedded in biocompatible materials.

PubMed

Pilla, Viviane; Alves, Leandro P; Iwazaki, Adalberto N; Andrade, Acácio A; Antunes, Andrea; Munin, Egberto

2013-09-01

Cadmium selenide/zinc sulfide (CdSe/ZnS) core-shell quantum dots (QDs) embedded in biocompatible materials were thermally and optically characterized with a thermal lens (TL) technique. Transient TL measurements were performed with a mode-mismatched, dual-beam (excitation and probe) configuration. A thermo-optical study of the CdSe/ZnS QDs was performed for different core diameters (3.5, 4.0, 5.2, and 6.6 nm) in aqueous solution and synthetic saliva, and three different core diameters (2.4, 2.9, and 4.1 nm) embedded in restorative dental resin (0.025% by mass). The thermal diffusivity results are characteristic of the biocompatible matrices. The radiative quantum efficiencies for aqueous solution and biofluid materials are dependent on the core size of the CdSe/ZnS core-shell QDs. The results obtained from the fluorescence spectral measurements for the biocompatible materials support the TL results.

Biophysical characterization of soluble Pseudomonas syringae ice nucleation protein InaZ fragments.

PubMed

Han, Yu Jin; Song, HyoJin; Lee, Chang Woo; Ly, Nguyễn Hoàng; Joo, Sang-Woo; Lee, Jun Hyuck; Kim, Soon-Jong; Park, SangYoun

2017-01-01

Ice nucleation protein (INP) with its functional domain consisting of multiple 48-residue repeat units effectively induces super-cooled water into ice. Circular dichroism and infrared deconvolution analyses on a soluble 240-residue fragment of Pseudomonas syringae InaZ (InaZ240) containing five 48-residue repeat units indicated that it is mostly composed of β-sheet and random coil. Analytical ultracentrifugation suggested that InaZ240 behaves as a monomer of an elongated ellipsoid. However, InaZ240 showed only minimum ice binding compared to anti-freeze proteins. Other P. syringae InaZ proteins with more 48-residue repeat units were made, in which the largest soluble fragment obtainable was an InaZ with twelve 48-residue repeat units. Size-exclusion chromatography analyses further suggested that the overall shape of the expressed InaZ fragments is pH-dependent, which becomes compact as the numbers of 48-residue repeat unit increase. Copyright © 2016 Elsevier B.V. All rights reserved.

EDITORIAL: Progress in quantum technology: one photon at a time Progress in quantum technology: one photon at a time

NASA Astrophysics Data System (ADS)

Demming, Anna

2012-07-01

Technological developments sparked by quantum mechanics and wave-particle duality are still gaining ground over a hundred years after the theories were devised. While the impact of the theories in fundamental research, philosophy and even art and literature is widely appreciated, the implications in device innovations continue to breed potential. Applications inspired by these concepts include quantum computation and quantum cryptography protocols based on single photons, among many others. In this issue, researchers in Germany and the US report a step towards precisely triggered single-photon sources driven by surface acoustic waves (SAWs) [1]. The work brings technology based on quantum mechanics yet another step closer to practical device reality. Generation of single 'antibunched' photons has been one of the key challenges to progress in quantum information processing and communication. Researchers from Toshiba and Cambridge University in the UK recently reported what they described as 'the first electrically driven single-photon source capable of emitting indistinguishable photons' [2]. Single-photon sources have been reported previously [3]. However the approach demonstrated by Shields and colleagues allows electrical control, which is particularly useful for implementing in compact devices. The researchers used a layer of InAs quantum dots embedded in the intrinsic region of a p-i-n diode to demonstrate interference between single photons. They also present a complete theory based on the interference of photons with a Lorentzian spectrum, which they compare with both continuous-wave and pulsed experiments. The application of SAWs in achieving precisely triggered single-photon sources develops the work of researchers in Germany in the late 1990s [4]. Surface acoustic waves travel like sound waves, but are characterized by an amplitude that typically decays exponentially with depth into the substrate. As Rocke and colleagues demonstrated, they can be used to dissociate an optically excited exciton and spatially separate the electron and hole, thereby increasing the radiative lifetime by orders of magnitude. The interesting behaviour of SAWs has led to studies towards a number of other applications including sensing [5-7], synthesis and nanoassembly [8]. For applications in single-photon sources, the electron-hole pairs are transported by the SAW to a quantum dot where they recombine emitting a single photon. However, so far various limiting factors in the system, such as the low quality of the quantum dots used leading to multiple-exciton recombinations, have hindered potential applications of the system as a single-photon source. Control over high-quality quantum-dot self-assembly is constantly improving. Researchers at the University of California at Berkeley and Harvard University in the US report the ability to successfully position a small number of colloidal quantum dots to within less than 100 nm accuracy on metallic surfaces [9]. They use single-stranded DNA both to act as an anchor to the gold or silver substrates and to selectively bind to the quantum dots, allowing programmed assembly of quantum dots on plasmonic structures. More recently still, researchers in Germany have reported how they can controllably reduce the density of self-assembled InP quantum dots by cyclic deposition with growth interruptions [10]. The impressive control has great potential for quantum emitter use. In this issue, Völk, Krenner and colleagues use an alternative approach to demonstrate how they can improve the performance of single-photon sources using SAWs. They use an optimized system of isolated self-assembled quantum posts in a quantum-well structure and inject the carriers at a distance from the posts where recombination and emission take place [3]. The SAW dissociates the electron-hole pairs and transports them to the quantum posts, so the two carrier types arrive at the quantum post with a set time delay. Other approaches, such as Coulomb blockade ones, have struggled to achieve the sequential injection of the carriers

Correlation between surface reconstruction and polytypism in InAs nanowire selective area epitaxy

NASA Astrophysics Data System (ADS)

Liu, Ziyang; Merckling, Clement; Rooyackers, Rita; Richard, Olivier; Bender, Hugo; Mols, Yves; Vila, María; Rubio-Zuazo, Juan; Castro, Germán R.; Collaert, Nadine; Thean, Aaron; Vandervorst, Wilfried; Heyns, Marc

2017-12-01

The mechanism of widely observed intermixing of wurtzite and zinc-blende crystal structures in InAs nanowire (NW) grown by selective area epitaxy (SAE) is studied. We demonstrate that the crystal structure in InAs NW grown by SAE can be controlled using basic growth parameters, and wurtzitelike InAs NWs are achieved. We link the polytypic InAs NWs SAE to the reconstruction of the growth front (111)B surface. Surface reconstruction study of InAs (111) substrate and the following homoepitaxy experiment suggest that (111) planar defect nucleation is related to the (1 × 1) reconstruction of InAs (111)B surface. In order to reveal it more clearly, a model is presented to correlate growth temperature and arsenic partial pressure with InAs NW crystal structure. This model considers the transition between (1 × 1) and (2 × 2) surface reconstructions in the frame of adatom atoms adsorption/desorption, and the polytypism is thus linked to reconstruction quantitatively. The experimental data fit well with the model, which highly suggests that surface reconstruction plays an important role in the polytypism phenomenon in InAs NWs SAE.

Raman Scattering Study of Lattice Vibrations in the Type-II Superlattice InAs /InAs1 -xSbx

NASA Astrophysics Data System (ADS)

Liu, Henan; Zhang, Yong; Steenbergen, Elizabeth H.; Liu, Shi; Lin, Zhiyuan; Zhang, Yong-Hang; Kim, Jeomoh; Ji, Mi-Hee; Detchprohm, Theeradetch; Dupuis, Russell D.; Kim, Jin K.; Hawkins, Samuel D.; Klem, John F.

2017-09-01

The InAs /InAs1 -xSbx superlattice system distinctly differs from two well-studied superlattice systems GaAs /AlAs and InAs /GaSb in terms of electronic band alignment, common elements at the interface, and phonon spectrum overlapping of the constituents. This fact leads to the unique electronic and vibrational properties of the InAs /InAs1 -xSbx system when compared to the other two systems. In this work, we report a polarized Raman study of the vibrational properties of the InAs /InAs1 -xSbx superlattices (SLs) as well as selected InAs1 -xSbx alloys, all grown on GaSb substrates by either MBE or metalorganic chemical vapor deposition (MOCVD) from both the growth surface and cleaved edge. In the SL, from the (001) backscattering geometry, an InAs-like longitudinal optical (LO) mode is observed as the primary feature, and its intensity is found to increase with increasing Sb composition. From the (110) cleaved-edge backscattering geometry, an InAs-like transverse optical (TO) mode is observed as the main feature in two cross-polarization configurations, but an additional InAs-like "forbidden" LO mode is observed in two parallel-polarization configurations. The InAs1 -xSbx alloys lattice matched to the substrate (xSb˜0.09 ) grown by MBE are also found to exhibit the forbidden LO mode, implying the existence of some unexpected [001] modulation. However, the strained samples (xSb˜0.35 ) grown by MOCVD are found to behave like a disordered alloy. The primary conclusions are (1) the InAs-like LO or TO mode can be either a confined or quasiconfined mode in the InAs layers of the SL or extended mode of the whole structure depending on the Sb composition. (2) InAs /InAs1 -xSbx and InAs /GaSb SLs exhibit significantly different behaviors in the cleaved-edge geometry but qualitatively similar in the (001) geometry. (3) The appearance of the forbidden LO-like mode is a universal signature for SLs and bulk systems resulting from the mixing of phonon modes due to structural modulation or symmetry reduction.

Using Local Perturbations To Manipulate and Control Pointer States in Quantum Dot Systems

NASA Astrophysics Data System (ADS)

Akis, Richard; Speyer, Gil; Ferry, David; Brunner, Roland

2012-02-01

Recently, scanning gate microscopy (SGM) was used to image scarred wave functions in an open InAs quantum dot[1]. The SGM tip provides a local potential perturbation and imaging is performed by measuring changes in conductance. Scarred wave functions, long associated with quantum chaos, have been shown in open dots to correspond to pointer states[2], eigenstates that survive the decoherence process that occurs via coupling to the environment. Pointer states modulate the conductance, yielding periodic fluctuations and the scars, normally thought unstable, are stabilized by quantum Darwinism [3]. We shall show that, beyond probing, pointer states can be manipulated by local perturbations. Particularly interesting effects occur in coupled quantum dot arrays, where a pointer state localized in one dot can be shifted over into another with a perturbation in a completely different part of the system. These nonlocal effects may perhaps be exploited to give such systems an exotic functionality. [1] A. M. Burke, R. Akis, T. E. Day, Gil Speyer, D. K. Ferry, and B. R. Bennett, Phys. Rev. Lett. 104, 176801 (2010). [2] D. K. Ferry, R. Akis, and J. P. Bird, Phys. Rev. Lett. 104, 176801 (2004). [3] R. Brunner, R. Akis,D. K. Ferry, F. Kuchar,and R. Meisels, Phys. Rev. Lett. 101, 024102 (2008).

High mobility In0.75Ga0.25As quantum wells in an InAs phonon lattice

NASA Astrophysics Data System (ADS)

Chen, C.; Holmes, S. N.; Farrer, I.; Beere, H. E.; Ritchie, D. A.

2018-03-01

InGaAs based devices are great complements to silicon for CMOS, as they provide an increased carrier saturation velocity, lower operating voltage and reduced power dissipation (International technology roadmap for semiconductors (www.itrs2.net)). In this work we show that In0.75Ga0.25As quantum wells with a high mobility, 15 000 to 20 000 cm2 V-1 s-1 at ambient temperature, show an InAs-like phonon with an energy of 28.8 meV, frequency of 232 cm-1 that dominates the polar-optical mode scattering from  ˜70 K to 300 K. The measured optical phonon frequency is insensitive to the carrier density modulated with a surface gate or LED illumination. We model the electron scattering mechanisms as a function of temperature and identify mechanisms that limit the electron mobility in In0.75Ga0.25As quantum wells. Background impurity scattering starts to dominate for temperatures  <100 K. In the high mobility In0.75Ga0.25As quantum well, GaAs-like phonons do not couple to the electron gas unlike the case of In0.53Ga0.47As quantum wells.

The operation principle of the well in quantum dot stack infrared photodetector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Jheng-Han; Wu, Zong-Ming; Liao, Yu-Min

2013-12-28

The well in the quantum dot stack infrared photodetector (WD-QDIP) is proposed which can be operated at high temperature ∼230 K. The operation principle of this device is investigated, including the carrier transport and the enhancement in the photocurrent. The WD-QDIPs with different well numbers are fabricated to study the mechanisms. It is realized that the carrier transport from the emitter to the collector in traditional quantum dot infrared photodetectors consists of two channels deduced from current-voltage characteristics and dark current activation energy at different temperatures. At temperatures below 77 K, the current transports through the InAs quantum dot channel, whereas atmore » temperatures higher than 77 K, the current is dominated by the GaAs leakage channel. In addition, the non-equilibrium situation at low temperatures is also observed owing to the presence of photovoltaic phenomenon. The carrier distribution inside the QDs is simulated to investigate the reasons for the increase of photocurrent. Based on the simulation and the photocurrent response, the hot carrier (electron) scattering effect by the insertion of a quantum well layer is inferred as the most probable reason that lead to the enhancement of the response and regarded as the key factor to achieve high- temperature operation.« less

Amorphous Ge quantum dots embedded in crystalline Si: ab initio results.

PubMed

Laubscher, M; Küfner, S; Kroll, P; Bechstedt, F

2015-10-14

We study amorphous Ge quantum dots embedded in a crystalline Si matrix through structure modeling and simulation using ab initio density functional theory including spin-orbit interaction and quasiparticle effects. Three models are generated by replacing a spherical region within diamond Si by Ge atoms and creating a disordered bond network with appropriate density inside the Ge quantum dot. After total-energy optimisations of the atomic geometry we compute the electronic and optical properties. We find three major effects: (i) the resulting nanostructures adopt a type-I heterostructure character; (ii) the lowest optical transitions occur only within the Ge quantum dots, and do not involve or cross the Ge-Si interface. (iii) for larger amorphous Ge quantum dots, with diameters of about 2.0 and 2.7 nm, absorption peaks appear in the mid-infrared spectral region. These are promising candidates for intense luminescence at photon energies below the gap energy of bulk Ge.

Quantum interference measurement of spin interactions in a bio-organic/semiconductor device structure

DOE PAGES

Deo, Vincent; Zhang, Yao; Soghomonian, Victoria; ...

2015-03-30

Quantum interference is used to measure the spin interactions between an InAs surface electron system and the iron center in the biomolecule hemin in nanometer proximity in a bio-organic/semiconductor device structure. The interference quantifies the influence of hemin on the spin decoherence properties of the surface electrons. The decoherence times of the electrons serve to characterize the biomolecule, in an electronic complement to the use of spin decoherence times in magnetic resonance. Hemin, prototypical for the heme group in hemoglobin, is used to demonstrate the method, as a representative biomolecule where the spin state of a metal ion affects biologicalmore » functions. The electronic determination of spin decoherence properties relies on the quantum correction of antilocalization, a result of quantum interference in the electron system. Spin-flip scattering is found to increase with temperature due to hemin, signifying a spin exchange between the iron center and the electrons, thus implying interactions between a biomolecule and a solid-state system in the hemin/InAs hybrid structure. The results also indicate the feasibility of artificial bioinspired materials using tunable carrier systems to mediate interactions between biological entities.« less

Chirality of nanophotonic waveguide with embedded quantum emitter for unidirectional spin transfer

NASA Astrophysics Data System (ADS)

Coles, R. J.; Price, D. M.; Dixon, J. E.; Royall, B.; Clarke, E.; Kok, P.; Skolnick, M. S.; Fox, A. M.; Makhonin, M. N.

2016-03-01

Scalable quantum technologies may be achieved by faithful conversion between matter qubits and photonic qubits in integrated circuit geometries. Within this context, quantum dots possess well-defined spin states (matter qubits), which couple efficiently to photons. By embedding them in nanophotonic waveguides, they provide a promising platform for quantum technology implementations. In this paper, we demonstrate that the naturally occurring electromagnetic field chirality that arises in nanobeam waveguides leads to unidirectional photon emission from quantum dot spin states, with resultant in-plane transfer of matter-qubit information. The chiral behaviour occurs despite the non-chiral geometry and material of the waveguides. Using dot registration techniques, we achieve a quantum emitter deterministically positioned at a chiral point and realize spin-path conversion by design. We further show that the chiral phenomena are much more tolerant to dot position than in standard photonic crystal waveguides, exhibit spin-path readout up to 95+/-5% and have potential to serve as the basis of spin-logic and network implementations.

Chirality of nanophotonic waveguide with embedded quantum emitter for unidirectional spin transfer

PubMed Central

Coles, R. J.; Price, D. M.; Dixon, J. E.; Royall, B.; Clarke, E.; Kok, P.; Skolnick, M. S.; Fox, A. M.; Makhonin, M. N.

2016-01-01

Scalable quantum technologies may be achieved by faithful conversion between matter qubits and photonic qubits in integrated circuit geometries. Within this context, quantum dots possess well-defined spin states (matter qubits), which couple efficiently to photons. By embedding them in nanophotonic waveguides, they provide a promising platform for quantum technology implementations. In this paper, we demonstrate that the naturally occurring electromagnetic field chirality that arises in nanobeam waveguides leads to unidirectional photon emission from quantum dot spin states, with resultant in-plane transfer of matter-qubit information. The chiral behaviour occurs despite the non-chiral geometry and material of the waveguides. Using dot registration techniques, we achieve a quantum emitter deterministically positioned at a chiral point and realize spin-path conversion by design. We further show that the chiral phenomena are much more tolerant to dot position than in standard photonic crystal waveguides, exhibit spin-path readout up to 95±5% and have potential to serve as the basis of spin-logic and network implementations. PMID:27029961

Chirality of nanophotonic waveguide with embedded quantum emitter for unidirectional spin transfer.

PubMed

Coles, R J; Price, D M; Dixon, J E; Royall, B; Clarke, E; Kok, P; Skolnick, M S; Fox, A M; Makhonin, M N

2016-03-31

Scalable quantum technologies may be achieved by faithful conversion between matter qubits and photonic qubits in integrated circuit geometries. Within this context, quantum dots possess well-defined spin states (matter qubits), which couple efficiently to photons. By embedding them in nanophotonic waveguides, they provide a promising platform for quantum technology implementations. In this paper, we demonstrate that the naturally occurring electromagnetic field chirality that arises in nanobeam waveguides leads to unidirectional photon emission from quantum dot spin states, with resultant in-plane transfer of matter-qubit information. The chiral behaviour occurs despite the non-chiral geometry and material of the waveguides. Using dot registration techniques, we achieve a quantum emitter deterministically positioned at a chiral point and realize spin-path conversion by design. We further show that the chiral phenomena are much more tolerant to dot position than in standard photonic crystal waveguides, exhibit spin-path readout up to 95±5% and have potential to serve as the basis of spin-logic and network implementations.

Gain and refractive index dynamics in p-doped InAs quantum dash semiconductor optical amplifiers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Komolibus, Katarzyna; Tyndall National Institute, University College Cork, Cork T12 R5CP; Piwonski, Tomasz, E-mail: tomasz.piwonski@tyndall.ie

The ultrafast carrier dynamics in a p-doped dash-in-a-well structure at 1.5 μm is experimentally investigated. An analysis of the timescales related to carrier relaxation and escape processes as well as the “dynamical” linewidth enhancement factor is presented and compared with results obtained from similar un-doped materials. Intentional p-doping of the active region results in an enhancement of the intermediate timescale of the gain dynamics associated with phonon-assisted electron capture and a reduction of the α-factor due to increased differential gain.

Experimental study of near-field light collection efficiency of aperture fiber probe at near-infrared wavelengths.

PubMed

Tsumori, Nobuhiro; Takahashi, Motoki; Sakuma, Yoshiki; Saiki, Toshiharu

2011-10-10

We examined the near-field collection efficiency of near-infrared radiation for an aperture probe. We used InAs quantum dots as ideal point light sources with emission wavelengths ranging from 1.1 to 1.6 μm. We experimentally investigated the wavelength dependence of the collection efficiency and compared the results with computational simulations that modeled the actual probe structure. The observed degradation in the collection efficiency is attributed to the cutoff characteristics of the gold-clad tapered waveguide, which approaches an ideal conductor at near-infrared wavelengths. © 2011 Optical Society of America

Optical Measurement and Modeling of Interactions between Two Hole Spins or Two Electron Spins in Coupled InAs Quantum Dots

DTIC Science & Technology

2013-03-12

Loss, Phys. Rev. B 62, 2581 (2000). [10] R. I. Dzhioev, K.V. Kavokin, V. L. Korenev , M.V. Lazarev, B.Y. Meltser, M.N. Stepanova, B. P. Zakharchenya... Korenev , T. L. Reinecke, and D. Gammon, Phys. Rev. B 75, 245318 (2007). [12] D. Kim, S. G. Carter, A. Greilich, A. S. Bracker, and D. Gammon, Nat. Phys. 7...I. V. Ponomarev, E. A. Stinaff, A. S. Bracker, V. L. Korenev , T. L. Reinecke, and D. Gammon, Phys. Rev. Lett. 97, 197202 (2006). [30] W. Liu, S

Wide spectral range confocal microscope based on endlessly single-mode fiber.

PubMed

Hubbard, R; Ovchinnikov, Yu B; Hayes, J; Richardson, D J; Fu, Y J; Lin, S D; See, P; Sinclair, A G

2010-08-30

We report an endlessly single mode, fiber-optic confocal microscope, based on a large mode area photonic crystal fiber. The microscope confines a very broad spectral range of excitation and emission wavelengths to a single spatial mode in the fiber. Single-mode operation over an optical octave is feasible. At a magnification of 10 and λ = 900 nm, its resolution was measured to be 1.0 μm (lateral) and 2.5 μm (axial). The microscope's use is demonstrated by imaging single photons emitted by individual InAs quantum dots in a pillar microcavity.

Fiber-coupled pillar array as a highly pure and stable single-photon source

NASA Astrophysics Data System (ADS)

Odashima, S.; Sasakura, H.; Nakajima, H.; Kumano, H.

2017-12-01

A highly pure and stable single-photon source is prepared that comprises a well-designed pillar array, in which each pillar contains only a few InAs quantum dots. A nano-pillar in this array is in direct contact with a fiber end surface and cooled in a liquid-He bath. Auto-correlation measurements show that this source provides an average g(2)(0) value of 0.0174 in the measured excitation-power range. This photon source and fiber coupling are quite rigid against external disturbances such as cooling-heating cycles and vibration, with long-term stability.

A Transfer Hamiltonian Model for Devices Based on Quantum Dot Arrays

PubMed Central

Illera, S.; Prades, J. D.; Cirera, A.; Cornet, A.

2015-01-01

We present a model of electron transport through a random distribution of interacting quantum dots embedded in a dielectric matrix to simulate realistic devices. The method underlying the model depends only on fundamental parameters of the system and it is based on the Transfer Hamiltonian approach. A set of noncoherent rate equations can be written and the interaction between the quantum dots and between the quantum dots and the electrodes is introduced by transition rates and capacitive couplings. A realistic modelization of the capacitive couplings, the transmission coefficients, the electron/hole tunneling currents, and the density of states of each quantum dot have been taken into account. The effects of the local potential are computed within the self-consistent field regime. While the description of the theoretical framework is kept as general as possible, two specific prototypical devices, an arbitrary array of quantum dots embedded in a matrix insulator and a transistor device based on quantum dots, are used to illustrate the kind of unique insight that numerical simulations based on the theory are able to provide. PMID:25879055

A transfer hamiltonian model for devices based on quantum dot arrays.

PubMed

Illera, S; Prades, J D; Cirera, A; Cornet, A

2015-01-01

We present a model of electron transport through a random distribution of interacting quantum dots embedded in a dielectric matrix to simulate realistic devices. The method underlying the model depends only on fundamental parameters of the system and it is based on the Transfer Hamiltonian approach. A set of noncoherent rate equations can be written and the interaction between the quantum dots and between the quantum dots and the electrodes is introduced by transition rates and capacitive couplings. A realistic modelization of the capacitive couplings, the transmission coefficients, the electron/hole tunneling currents, and the density of states of each quantum dot have been taken into account. The effects of the local potential are computed within the self-consistent field regime. While the description of the theoretical framework is kept as general as possible, two specific prototypical devices, an arbitrary array of quantum dots embedded in a matrix insulator and a transistor device based on quantum dots, are used to illustrate the kind of unique insight that numerical simulations based on the theory are able to provide.

Relation of dietary inorganic arsenic exposure and urinary inorganic arsenic metabolites excretion in Japanese subjects.

PubMed

Oguri, Tomoko; Yoshinaga, Jun; Suzuki, Yayoi; Tao, Hiroaki; Nakazato, Tetsuya

2017-06-03

Inorganic arsenic (InAs) is a ubiquitous metalloid that has been shown to exert multiple adverse health outcomes. Urinary InAs and its metabolite concentration has been used as a biomarker of arsenic (As) exposure in some epidemiological studies, however, quantitative relationship between daily InAs exposure and urinary InAs metabolites concentration has not been well characterized. We collected a set of 24-h duplicated diet and spot urine sample of the next morning of diet sampling from 20 male and 19 female subjects in Japan from August 2011 to October 2012. Concentrations of As species in duplicated diet and urine samples were determined by using liquid chromatography-ICP mass spectrometry with a hydride generation system. Sum of the concentrations of urinary InAs and methylarsonic acid (MMA) was used as a measure of InAs exposure. Daily dietary InAs exposure was estimated to be 0.087 µg kg -1 day -1 (Geometric mean, GM), and GM of urinary InAs+MMA concentrations was 3.5 ng mL -1 . Analysis of covariance did not find gender-difference in regression coefficients as significant (P > 0.05). Regression equation Log 10 [urinary InAs+MMA concentration] = 0.570× Log 10 [dietary InAs exposure level per body weight] + 1.15 was obtained for whole data set. This equation would be valuable in converting urinary InAs concentration to daily InAs exposure, which will be important information in risk assessment.

20 CFR 668.130 - What obligation do we have to consult with the INA grantee community in developing rules...

Code of Federal Regulations, 2010 CFR

2010-04-01

... grantee community as a full partner in developing policies for the INA programs. We will actively seek and... the INA grantee community in developing rules, regulations, and standards of accountability for INA programs? 668.130 Section 668.130 Employees' Benefits EMPLOYMENT AND TRAINING ADMINISTRATION, DEPARTMENT OF...

20 CFR 668.130 - What obligation do we have to consult with the INA grantee community in developing rules...

Code of Federal Regulations, 2011 CFR

2011-04-01

... grantee community as a full partner in developing policies for the INA programs. We will actively seek and... the INA grantee community in developing rules, regulations, and standards of accountability for INA programs? 668.130 Section 668.130 Employees' Benefits EMPLOYMENT AND TRAINING ADMINISTRATION, DEPARTMENT OF...

22 CFR 40.205 - Applicant for immigrant visa under INA 203(c).

Code of Federal Regulations, 2010 CFR

2010-04-01

... 22 Foreign Relations 1 2010-04-01 2010-04-01 false Applicant for immigrant visa under INA 203(c... NONIMMIGRANTS AND IMMIGRANTS UNDER THE IMMIGRATION AND NATIONALITY ACT, AS AMENDED Failure to Comply with INA § 40.205 Applicant for immigrant visa under INA 203(c). An alien shall be ineligible to receive a visa...

20 CFR 668.100 - What is the purpose of the programs established to serve Native American peoples (INA programs...

Code of Federal Regulations, 2012 CFR

2012-04-01

... established to serve Native American peoples (INA programs) under section 166 of the Workforce Investment Act... peoples (INA programs) under section 166 of the Workforce Investment Act? (a) The purpose of WIA INA... employment and training services to Native American peoples and their communities. Services should be...

20 CFR 668.100 - What is the purpose of the programs established to serve Native American peoples (INA programs...

Code of Federal Regulations, 2013 CFR

2013-04-01

... established to serve Native American peoples (INA programs) under section 166 of the Workforce Investment Act... peoples (INA programs) under section 166 of the Workforce Investment Act? (a) The purpose of WIA INA... employment and training services to Native American peoples and their communities. Services should be...

20 CFR 668.100 - What is the purpose of the programs established to serve Native American peoples (INA programs...

Code of Federal Regulations, 2014 CFR

2014-04-01

... established to serve Native American peoples (INA programs) under section 166 of the Workforce Investment Act... peoples (INA programs) under section 166 of the Workforce Investment Act? (a) The purpose of WIA INA... employment and training services to Native American peoples and their communities. Services should be...

20 CFR 668.860 - What cash management procedures apply to INA grant funds?

Code of Federal Regulations, 2010 CFR

2010-04-01

... 20 Employees' Benefits 3 2010-04-01 2010-04-01 false What cash management procedures apply to INA... Administrative Requirements § 668.860 What cash management procedures apply to INA grant funds? INA grantees must... implement the Cash Management Improvement Act, found at 31 CFR part 205, apply by law to most recipients of...

20 CFR 668.860 - What cash management procedures apply to INA grant funds?

Code of Federal Regulations, 2011 CFR

2011-04-01

... 20 Employees' Benefits 3 2011-04-01 2011-04-01 false What cash management procedures apply to INA... Administrative Requirements § 668.860 What cash management procedures apply to INA grant funds? INA grantees must... implement the Cash Management Improvement Act, found at 31 CFR part 205, apply by law to most recipients of...

Theoretical study of energy states of two-dimensional electron gas in pseudomorphically strained InAs HEMTs taking into account the non-parabolicity of the conduction band

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nishio, Yui; Yamaguchi, Satoshi; Yamazaki, Youichi

2013-12-04

We determined rigorously the energy states of a two-dimensional electron gas (2DEG) in high electron mobility transistors (HEMTs) with a pseudomorphically strained InAs channel (InAs PHEMTs) taking into account the non-parabolicity of the conduction band for InAs. The sheet carrier concentration of 2DEG for the non-parabolic energy band was about 50% larger than that for the parabolic energy band and most of the electrons are confined strongly in the InAs layer. In addition, the threshold voltage for InAs PHEMTs was about 0.21 V lower than that for conventional InGaAs HEMTs.

INA-Rxiv: The Missing Puzzle in Indonesia’s Scientific Publishing Workflow

NASA Astrophysics Data System (ADS)

Rahim, R.; Irawan, D. E.; Zulfikar, A.; Hardi, R.; Arliman S, L.; Gultom, E. R.; Ginting, G.; Wahyuni, S. S.; Mesran, M.; Mahjudin, M.; Saputra, I.; Waruwu, F. T.; Suginam, S.; Buulolo, E.; Abraham, J.

2018-04-01

INA-Rxiv is the first Indonesia preprint server marking the new development initiated by the open science community. This study aimed at describing the development of INA-Rxiv and its conversations. It usedanalyzer of Inarxiv.id, WhatsApp Group Analyzer, and Twitter Analytics as the tools for data analysis complemented with observation.The results showed that INA-Rxiv users are growing because of the numerous discussions in social media, e.g.WhatsApp,as well as some other positive response of writers who have been using INA- Rxiv. The perspective of growth mindset and the implication of INA-Rxiv movement for filling up the gap in accelerating scientific dissemination process are presented at the end of this article.

Current–phase relations of few-mode InAs nanowire Josephson junctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Spanton, Eric M.; Deng, Mingtang; Vaitiekėnas, Saulius

Gate-tunable semiconductor nanowires with superconducting leads have great potential for quantum computation and as model systems for mesoscopic Josephson junctions. The supercurrent, I, versus the phase, Φ, across the junction is called the current–phase relation (CPR). It can reveal not only the amplitude of the critical current, but also the number of modes and their transmission. Here, we measured the CPR of many individual InAs nanowire Josephson junctions, one junction at a time. Both the amplitude and shape of the CPR varied between junctions, with small critical currents and skewed CPRs indicating few-mode junctions with high transmissions. In a gate-tunablemore » junction, we found that the CPR varied with gate voltage: near the onset of supercurrent, we observed behaviour consistent with resonant tunnelling through a single, highly transmitting mode. The gate dependence is consistent with modelled subband structure that includes an effective tunnelling barrier due to an abrupt change in the Fermi level at the boundary of the gate-tuned region. These measurements of skewed, tunable, few-mode CPRs are promising both for applications that require anharmonic junctions and for Majorana readout proposals.« less

Current–phase relations of few-mode InAs nanowire Josephson junctions

DOE PAGES

Spanton, Eric M.; Deng, Mingtang; Vaitiekėnas, Saulius; ...

2017-08-14

Gate-tunable semiconductor nanowires with superconducting leads have great potential for quantum computation and as model systems for mesoscopic Josephson junctions. The supercurrent, I, versus the phase, Φ, across the junction is called the current–phase relation (CPR). It can reveal not only the amplitude of the critical current, but also the number of modes and their transmission. Here, we measured the CPR of many individual InAs nanowire Josephson junctions, one junction at a time. Both the amplitude and shape of the CPR varied between junctions, with small critical currents and skewed CPRs indicating few-mode junctions with high transmissions. In a gate-tunablemore » junction, we found that the CPR varied with gate voltage: near the onset of supercurrent, we observed behaviour consistent with resonant tunnelling through a single, highly transmitting mode. The gate dependence is consistent with modelled subband structure that includes an effective tunnelling barrier due to an abrupt change in the Fermi level at the boundary of the gate-tuned region. These measurements of skewed, tunable, few-mode CPRs are promising both for applications that require anharmonic junctions and for Majorana readout proposals.« less

Electronic structure and orientation relationship of Li nanoclusters embedded in MgO studied by depth-selective positron annihilation two-dimensional angular correlation

NASA Astrophysics Data System (ADS)

Falub, C. V.; Mijnarends, P. E.; Eijt, S. W.; van Huis, M. A.; van Veen, A.; Schut, H.

2002-08-01

Quantum-confined positrons are sensitive probes for determining the electronic structure of nanoclusters embedded in materials. In this work, a depth-selective positron annihilation 2D-ACAR (two-dimensional angular correlation of annihilation radiation) method is used to determine the electronic structure of Li nanoclusters formed by implantation of 1016-cm-2 30-keV 6Li ions in MgO (100) and (110) crystals and by subsequent annealing at 950 K. Owing to the difference between the positron affinities of lithium and MgO, the Li nanoclusters act as quantum dots for positrons. 2D-ACAR distributions for different projections reveal a semicoherent fitting of the embedded metallic Li nanoclusters to the host MgO lattice. Ab initio Korringa-Kohn-Rostoker calculations of the momentum density show that the anisotropies of the experimental distributions are consistent with an fcc crystal structure of the Li nanoclusters. The observed reduction of the width of the experimental 2D-ACAR distribution is attributed to positron trapping in vacancies associated with Li clusters. This work proposes a method for studying the electronic structure of metallic quantum dots embedded in an insulating material.

Self-assembled quantum dot structures in a hexagonal nanowire for quantum photonics.

PubMed

Yu, Ying; Dou, Xiu-Ming; Wei, Bin; Zha, Guo-Wei; Shang, Xiang-Jun; Wang, Li; Su, Dan; Xu, Jian-Xing; Wang, Hai-Yan; Ni, Hai-Qiao; Sun, Bao-Quan; Ji, Yuan; Han, Xiao-Dong; Niu, Zhi-Chuan

2014-05-01

Two types of quantum nanostructures based on self-assembled GaAs quantumdots embedded into GaAs/AlGaAs hexagonal nanowire systems are reported, opening a new avenue to the fabrication of highly efficient single-photon sources, as well as the design of novel quantum optics experiments and robust quantum optoelectronic devices operating at higher temperature, which are required for practical quantum photonics applications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Quantum Optics with Near-Lifetime-Limited Quantum-Dot Transitions in a Nanophotonic Waveguide.

PubMed

Thyrrestrup, Henri; Kiršanskė, Gabija; Le Jeannic, Hanna; Pregnolato, Tommaso; Zhai, Liang; Raahauge, Laust; Midolo, Leonardo; Rotenberg, Nir; Javadi, Alisa; Schott, Rüdiger; Wieck, Andreas D; Ludwig, Arne; Löbl, Matthias C; Söllner, Immo; Warburton, Richard J; Lodahl, Peter

2018-03-14

Establishing a highly efficient photon-emitter interface where the intrinsic linewidth broadening is limited solely by spontaneous emission is a key step in quantum optics. It opens a pathway to coherent light-matter interaction for, e.g., the generation of highly indistinguishable photons, few-photon optical nonlinearities, and photon-emitter quantum gates. However, residual broadening mechanisms are ubiquitous and need to be combated. For solid-state emitters charge and nuclear spin noise are of importance, and the influence of photonic nanostructures on the broadening has not been clarified. We present near-lifetime-limited linewidths for quantum dots embedded in nanophotonic waveguides through a resonant transmission experiment. It is found that the scattering of single photons from the quantum dot can be obtained with an extinction of 66 ± 4%, which is limited by the coupling of the quantum dot to the nanostructure rather than the linewidth broadening. This is obtained by embedding the quantum dot in an electrically contacted nanophotonic membrane. A clear pathway to obtaining even larger single-photon extinction is laid out; i.e., the approach enables a fully deterministic and coherent photon-emitter interface in the solid state that is operated at optical frequencies.

Thermoelectric effect in an Aharonov-Bohm ring with an embedded quantum dot.

PubMed

Zheng, Jun; Chi, Feng; Lu, Xiao-Dong; Zhang, Kai-Cheng

2012-02-28

Thermoelectric effect is studied in an Aharonov-Bohm interferometer with an embedded quantum dot (QD) in the Coulomb blockade regime. The electrical conductance, electron thermal conductance, thermopower, and thermoelectric figure-of-merit are calculated by using the Keldysh Green's function method. It is found that the figure-of-merit ZT of the QD ring may be quite high due to the Fano effect originated from the quantum interference effect. Moreover, the thermoelectric efficiency is sensitive to the magnitude of the dot-lead and inter-lead coupling strengthes. The effect of intradot Coulomb repulsion on ZT is significant in the weak-coupling regime, and then large ZT values can be obtained at rather high temperature.

Near-field levitated quantum optomechanics with nanodiamonds

NASA Astrophysics Data System (ADS)

Juan, M. L.; Molina-Terriza, G.; Volz, T.; Romero-Isart, O.

2016-08-01

We theoretically show that the dipole force of an ensemble of quantum emitters embedded in a dielectric nanosphere can be exploited to achieve near-field optical levitation. The key ingredient is that the polarizability from the ensemble of embedded quantum emitters can be larger than the bulk polarizability of the sphere, thereby enabling the use of repulsive optical potentials and consequently the levitation using optical near fields. In levitated cavity quantum optomechanics, this could be used to boost the single-photon coupling by combining larger polarizability to mass ratio, larger field gradients, and smaller cavity volumes while remaining in the resolved sideband regime and at room temperature. A case study is done with a nanodiamond containing a high density of silicon-vacancy color centers that is optically levitated in the evanescent field of a tapered nanofiber and coupled to a high-finesse microsphere cavity.

22 CFR 40.68 - Aliens subject to INA 222(g).

Code of Federal Regulations, 2012 CFR

2012-04-01

... 22 Foreign Relations 1 2012-04-01 2012-04-01 false Aliens subject to INA 222(g). 40.68 Section 40... § 40.68 Aliens subject to INA 222(g). An alien who, under the provisions of INA 222(g), has voided a... new nonimmigrant visa unless the alien complies with the requirements in 22 CFR 41.101 (b) or (c...

22 CFR 40.68 - Aliens subject to INA 222(g).

Code of Federal Regulations, 2010 CFR

2010-04-01

... 22 Foreign Relations 1 2010-04-01 2010-04-01 false Aliens subject to INA 222(g). 40.68 Section 40... § 40.68 Aliens subject to INA 222(g). An alien who, under the provisions of INA 222(g), has voided a... new nonimmigrant visa unless the alien complies with the requirements in 22 CFR 41.101 (b) or (c...

22 CFR 40.68 - Aliens subject to INA 222(g).

Code of Federal Regulations, 2014 CFR

2014-04-01

... 22 Foreign Relations 1 2014-04-01 2014-04-01 false Aliens subject to INA 222(g). 40.68 Section 40... § 40.68 Aliens subject to INA 222(g). An alien who, under the provisions of INA 222(g), has voided a... new nonimmigrant visa unless the alien complies with the requirements in 22 CFR 41.101 (b) or (c...

22 CFR 40.68 - Aliens subject to INA 222(g).

Code of Federal Regulations, 2011 CFR

2011-04-01

... 22 Foreign Relations 1 2011-04-01 2011-04-01 false Aliens subject to INA 222(g). 40.68 Section 40... § 40.68 Aliens subject to INA 222(g). An alien who, under the provisions of INA 222(g), has voided a... new nonimmigrant visa unless the alien complies with the requirements in 22 CFR 41.101 (b) or (c...

22 CFR 40.68 - Aliens subject to INA 222(g).

Code of Federal Regulations, 2013 CFR

2013-04-01

... 22 Foreign Relations 1 2013-04-01 2013-04-01 false Aliens subject to INA 222(g). 40.68 Section 40... § 40.68 Aliens subject to INA 222(g). An alien who, under the provisions of INA 222(g), has voided a... new nonimmigrant visa unless the alien complies with the requirements in 22 CFR 41.101 (b) or (c...

Progress in low light-level InAs detectors- towards Geiger-mode detection

NASA Astrophysics Data System (ADS)

Tan, Chee Hing; Ng, Jo Shien; Zhou, Xinxin; David, John; Zhang, Shiyong; Krysa, Andrey

2017-05-01

InAs avalanche photodiodes (APDs) can be designed such that only electrons are allowed to initiate impact ionization, leading to the lowest possible excess noise factor. Optimization of wet chemical etching and surface passivation produced mesa APDs with bulk dominated dark current and responsivity that are comparable and higher, respectively, than a commercial InAs detector. Our InAs electron-APDs also show high stability with fluctuation of 0.1% when operated at a gain of 11.2 over 60 s. These InAs APDs can detect very weak signal down to 35 photons per pulse. Fabrication of planar InAs by Be implantation produced planar APDs with bulk dominated dark current. Annealing at 550 °C was necessary to remove implantation damage and to activate Be dopants. Due to minimal diffusion of Be, thick depletion of 8 μm was achieved. Since the avalanche gain increases exponentially with the thickness of avalanche region, our planar APD achieved high gain > 300 at 200 K. Our work suggest that both mesa and planar InAs APDs can exhibit high gain. When combined with a suitable preamplifier, single photon detection using InAs electron-APDs could be achieved.

CdSe/CdS semiconductor quantum rods as robust fluorescent probes for paraffin-embedded tissue imaging.

PubMed

Zacheo, Antonella; Quarta, Alessandra; Mangoni, Antonella; Pompa, Pier Paolo; Mastria, Rosanna; Capogrossi, Maurizio C; Rinaldi, Ross; Pellegrino, Teresa

2011-09-01

Immunofluorescence techniques on formalin fixed paraffin-embedded sections allow for the evaluation of the expression and spatial distribution of specific markers in patient tissue specimens or for monitoring the fate of labeled cells after in vivo injection. This technique suffers however from the auto-fluorescence background signal of the embedded tissue that eventually confounds the analysis. Here we show that rod-like semiconductor nanocrystals (QRs), intramuscularly injected in living mice, could be clearly detected by confocal microscopy in formalin fixed paraffin-embedded tissue sections. Despite the low amount of QRs amount injected (25 picomoles), these were clearly visible after 24 h in the muscle sections and their fluorescence signal was stronger than that of CdSe/ZnS quantum dots (QDs) similarly functionalized and in the case of QRs only, the signal lasted even after 21 days after the injection. © 2011 IEEE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hamilton, Kathleen E.; Humble, Travis S.

Using quantum annealing to solve an optimization problem requires minor embedding a logic graph into a known hardware graph. We introduce the minor set cover (MSC) of a known graph GG : a subset of graph minors which contain any remaining minor of the graph as a subgraph, in an effort to reduce the complexity of the minor embedding problem. Any graph that can be embedded into GG will be embeddable into a member of the MSC. Focusing on embedding into the hardware graph of commercially available quantum annealers, we establish the MSC for a particular known virtual hardware, whichmore » is a complete bipartite graph. Furthermore, we show that the complete bipartite graph K N,N has a MSC of N minors, from which K N+1 is identified as the largest clique minor of K N,N. In the case of determining the largest clique minor of hardware with faults we briefly discussed this open question.« less

Dissipative and electrostatic force spectroscopy of indium arsenide quantum dots by non-contact atomic force microscopy

NASA Astrophysics Data System (ADS)

Stomp, Romain-Pierre

This thesis is devoted to the studies of self-assembled InAs quantum dots (QD) by low-temperature Atomic Force Microscopy (AFM) in frequency modulation mode. Several spectroscopic methods are developed to investigate single electron charging from a two-dimensional electron gas (2DEG) to an individual InAs QD. Furthermore, a new technique to measure the absolute tip-sample capacitance is also demonstrated. The main observables are the electrostatic force between the metal-coated AFM tip and sample as well as the sample-induced energy dissipation, and therefore no tunneling current has to be collected at the AFM tip. Measurements were performed by recording simultaneously the shift in the resonant frequency and the Q-factor degradation of the oscillating cantilever either as a function of tip-sample voltage or distance. The signature of single electron charging was detected as an abrupt change in the frequency shift as well as corresponding peaks in the dissipation. The main experimental features in the force agree well with the semi-classical theory of Coulomb blockade by considering the free energy of the system. The observed dissipation peaks can be understood as a back-action effect on the oscillating cantilever beam due to the fluctuation in time of electrons tunneling back and forth between the 2DEG and the QD. It was also possible to extract the absolute value of the tip-sample capacitance, as a consequence of the spectroscopic analysis of the electrostic force as a function of tip-sample distance for different values of the applied voltage. At the same time, the contact potential difference and the residual non-capacitive force could also be determined as a function of tip-sample distance.

Wet-chemical passivation of InAs: toward surfaces with high stability and low toxicity.

PubMed

Jewett, Scott A; Ivanisevic, Albena

2012-09-18

In a variety of applications where the electronic and optical characteristics of traditional, siliconbased materials are inadequate, recently researchers have employed semiconductors made from combinations of group III and V elements such as InAs. InAs has a narrow band gap and very high electron mobility in the near-surface region, which makes it an attractive material for high performance transistors, optical applications, and chemical sensing. However, silicon-based materials remain the top semiconductors of choice for biological applications, in part because of their relatively low toxicity. In contrast to silicon, InAs forms an unstable oxide layer under ambient conditions, which can corrode over time and leach toxic indium and arsenic components. To make InAs more attractive for biological applications, researchers have investigated passivation, chemical and electronic stabilization, of the surface by adlayer adsorption. Because of the simplicity, low cost, and flexibility in the type of passivating molecule used, many researchers are currently exploring wet-chemical methods of passivation. This Account summarizes much of the recent work on the chemical passivation of InAs with a particular focus on the chemical stability of the surface and prevention of oxide regrowth. We review the various methods of surface preparation and discuss how crystal orientation affects the chemical properties of the surface. The correct etching of InAs is critical as researchers prepare the surface for subsequent adlayer adsorption. HCl etchants combined with a postetch annealing step allow the tuning of the chemical properties in the near-surface region to either arsenic- or indium-rich environments. Bromine etchants create indium-rich surfaces and do not require annealing after etching; however, bromine etchants are harsh and potentially destructive to the surface. The simultaneous use of NH(4)OH etchants with passivating molecules prevents contact with ambient air that can occur during sample transfer between solutions. The passivation of InAs is dominated by sulfur-based molecules, which form stable In-S bonds on the InAs surface. Both sulfides and alkanethiols form well-defined monolayers on InAs and are dominated by In-S interactions. Sulfur-passivated InAs surfaces prevent regrowth of the surface oxide layer and are more stable in air than unpassivated surfaces. Although functionalization of InAs with sulfur-based molecules effectively passivates the surface, future sensing applications may require the adsorption of functional biomolecules onto the InAs surface. Current research in this area focuses on the passivation abilities of biomolecules such as collagen binding peptides and amino acids. These biomolecules can physically adsorb onto InAs, and they demonstrate some passivation ability but not to the extent of sulfur-based molecules. Because these adsorbents do not form covalent bonds with the InAs surface, they do not effectively block oxide regrowth. A mixed adlayer containing a biomolecule and a thiol on the InAs surface provides one possible solution: these hybrid surfaces enhance passivation but also maintain the presence of a biomolecule on the surface. Such surface functionalization strategies on InAs could provide long-term stability and make these surfaces suitable for biological applications.

Exploring the Implementation of Steganography Protocols on Quantum Audio Signals

NASA Astrophysics Data System (ADS)

Chen, Kehan; Yan, Fei; Iliyasu, Abdullah M.; Zhao, Jianping

2018-02-01

Two quantum audio steganography (QAS) protocols are proposed, each of which manipulates or modifies the least significant qubit (LSQb) of the host quantum audio signal that is encoded as an FRQA (flexible representation of quantum audio) audio content. The first protocol (i.e. the conventional LSQb QAS protocol or simply the cLSQ stego protocol) is built on the exchanges between qubits encoding the quantum audio message and the LSQb of the amplitude information in the host quantum audio samples. In the second protocol, the embedding procedure to realize it implants information from a quantum audio message deep into the constraint-imposed most significant qubit (MSQb) of the host quantum audio samples, we refer to it as the pseudo MSQb QAS protocol or simply the pMSQ stego protocol. The cLSQ stego protocol is designed to guarantee high imperceptibility between the host quantum audio and its stego version, whereas the pMSQ stego protocol ensures that the resulting stego quantum audio signal is better immune to illicit tampering and copyright violations (a.k.a. robustness). Built on the circuit model of quantum computation, the circuit networks to execute the embedding and extraction algorithms of both QAS protocols are determined and simulation-based experiments are conducted to demonstrate their implementation. Outcomes attest that both protocols offer promising trade-offs in terms of imperceptibility and robustness.

Spectral functions of strongly correlated extended systems via an exact quantum embedding

NASA Astrophysics Data System (ADS)

Booth, George H.; Chan, Garnet Kin-Lic

2015-04-01

Density matrix embedding theory (DMET) [Phys. Rev. Lett. 109, 186404 (2012), 10.1103/PhysRevLett.109.186404], introduced an approach to quantum cluster embedding methods whereby the mapping of strongly correlated bulk problems to an impurity with finite set of bath states was rigorously formulated to exactly reproduce the entanglement of the ground state. The formalism provided similar physics to dynamical mean-field theory at a tiny fraction of the cost but was inherently limited by the construction of a bath designed to reproduce ground-state, static properties. Here, we generalize the concept of quantum embedding to dynamic properties and demonstrate accurate bulk spectral functions at similarly small computational cost. The proposed spectral DMET utilizes the Schmidt decomposition of a response vector, mapping the bulk dynamic correlation functions to that of a quantum impurity cluster coupled to a set of frequency-dependent bath states. The resultant spectral functions are obtained on the real-frequency axis, without bath discretization error, and allows for the construction of arbitrary dynamic correlation functions. We demonstrate the method on the one- (1D) and two-dimensional (2D) Hubbard model, where we obtain zero temperature and thermodynamic limit spectral functions, and show the trivial extension to two-particle Green's functions. This advance therefore extends the scope and applicability of DMET in condensed-matter problems as a computationally tractable route to correlated spectral functions of extended systems and provides a competitive alternative to dynamical mean-field theory for dynamic quantities.

Promotion of couples' voluntary HIV counseling and testing: a comparison of influence networks in Rwanda and Zambia.

PubMed

Kelley, April L; Hagaman, Ashley K; Wall, Kristin M; Karita, Etienne; Kilembe, William; Bayingana, Roger; Tichacek, Amanda; Kautzman, Michele; Allen, Susan A

2016-08-08

Many African adults do not know that partners in steady or cohabiting relationships can have different HIV test results. Despite WHO recommendations for couples' voluntary counseling and testing (CVCT), fewer than 10 % of couples have been jointly tested and counseled. We examine the roles and interactions of influential network leaders (INLs) and influential network agents (INAs) in promoting CVCT in Kigali, Rwanda and Lusaka, Zambia. INLs were identified in the faith-based, non-governmental, private, and health sectors. Each INL recruited and mentored several INAs who promoted CVCT. INLs and INAs were interviewed about demographic characteristics, promotional efforts, and working relationships. We also surveyed CVCT clients about sources of CVCT information. In Zambia, 53 INAs and 31 INLs were surveyed. In Rwanda, 33 INAs and 27 INLs were surveyed. Most (75 %-90 %) INAs believed that INL support was necessary for their promotional work. Zambian INLs reported being more engaged with their INAs than Rwandan INLs, with 58 % of Zambian INLs reporting that they gave a lot of support to their INAs versus 39 % in Rwanda. INAs in both Rwanda and Zambia reported promoting CVCT via group forums (77 %-97 %) and speaking to a community leader about CVCT (79 %-88 %) in the past month. More Rwandan INAs and INLs reported previous joint or individual HIV testing compared with their Zambian counterparts, of which more than half had not been tested. In Zambia and Rwanda, 1271 and 3895 CVCT clients were surveyed, respectively. Hearing about CVCT from INAs during one-on-one promotions was the most frequent source of information reported by clients in Zambia (71 %). In contrast, Rwandan couples who tested were more likely to have heard about CVCT from a previously tested couple (59 %). CVCT has long been endorsed for HIV prevention but few couples have been reached. Influential social networks can successfully promote evidence-based HIV prevention in Africa. Support from more senior INLs and group presentations leveraged INAs' one-on-one promotions. The INL/INA model was effective in promoting couples to seek joint HIV testing and counseling and may have broader application to other sub-Saharan African countries to sustainably increase CVCT uptake.

PLC-dependent intracellular Ca2+ release was associated with C6-ceramide-induced inhibition of Na+ current in rat granule cells.

PubMed

Liu, Zheng; Fei, Xiao-Wei; Fang, Yan-Jia; Shi, Wen-Jie; Zhang, Yu-Qiu; Mei, Yan-Ai

2008-09-01

In this report, the effects of C(6)-ceramide on the voltage-gated inward Na(+) currents (I(Na)), two types of main K(+) current [outward rectifier delayed K(+) current (I(K)) and outward transient K(+) current (I(A))], and cell death in cultured rat cerebellar granule cells were investigated. At concentrations of 0.01-100 microM, ceramide produced a dose-dependent and reversible inhibition of I(Na) without alteration of the steady-state activation and inactivation properties. Treatment with C(2)-ceramide caused a similar inhibitory effect on I(Na). However, dihydro-C(6)-ceramide failed to modulate I(Na). The effect of C(6)-ceramide on I(Na) was abolished by intracellular infusion of the Ca(2+)-chelating agent, 1,2-bis (2-aminophenoxy) ethane-N, N, N9, N9-tetraacetic acid, but was mimicked by application of caffeine. Blocking the release of Ca(2+) from the sarcoplasmic reticulum with ryanodine receptor blocker induced a gradual increase in I(Na) amplitude and eliminated the effect of ceramide on I(Na). In contrast, the blocker of the inositol 1,4,5-trisphosphate-sensitive Ca(2+) receptor did not affect the action of C(6)-ceramide. Intracellular application of GTPgammaS also induced a gradual decrease in I(Na) amplitude, while GDPbetaS eliminated the effect of C(6)-ceramide on I(Na). Furthermore, the C(6)-ceramide effect on I(Na) was abolished after application of the phospholipase C (PLC) blockers and was greatly reduced by the calmodulin inhibitors. Fluorescence staining showed that C(6)-ceramide decreased cell viability and blocking I(Na) by tetrodotoxin did not mimic the effect of C(6)-ceramide, and inhibiting intracellular Ca(2+) release by dantrolene could not decrease the C(6)-ceramide-induced cell death. We therefore suggest that increased PLC-dependent Ca(2+) release through the ryanodine-sensitive Ca(2+) receptor may be responsible for the C(6)-ceramide-induced inhibition of I(Na), which does not seem to be associated with C(6)-ceramide-induced granule neuron death.

Late INa increases diastolic SR-Ca2+-leak in atrial myocardium by activating PKA and CaMKII

PubMed Central

Fischer, Thomas H.; Herting, Jonas; Mason, Fleur E.; Hartmann, Nico; Watanabe, Saera; Nikolaev, Viacheslav O.; Sprenger, Julia U.; Fan, Peidong; Yao, Lina; Popov, Aron-Frederik; Danner, Bernhard C.; Schöndube, Friedrich; Belardinelli, Luiz; Hasenfuss, Gerd; Maier, Lars S.; Sossalla, Samuel

2015-01-01

Aims Enhanced cardiac late Na current (late INa) and increased sarcoplasmic reticulum (SR)-Ca2+-leak are both highly arrhythmogenic. This study seeks to identify signalling pathways interconnecting late INa and SR-Ca2+-leak in atrial cardiomyocytes (CMs). Methods and results In murine atrial CMs, SR-Ca2+-leak was increased by the late INa enhancer Anemonia sulcata toxin II (ATX-II). An inhibition of Ca2+/calmodulin-dependent protein kinase II (Autocamide-2-related inhibitory peptide), protein kinase A (H89), or late INa (Ranolazine or Tetrodotoxin) all prevented ATX-II-dependent SR-Ca2+-leak. The SR-Ca2+-leak induction by ATX-II was not detected when either the Na+/Ca2+ exchanger was inhibited (KBR) or in CaMKIIδc-knockout mice. FRET measurements revealed increased cAMP levels upon ATX-II stimulation, which could be prevented by inhibition of adenylyl cyclases (ACs) 5 and 6 (NKY 80) but not by inhibition of phosphodiesterases (IBMX), suggesting PKA activation via an AC-dependent increase of cAMP levels. Western blots showed late INa-dependent hyperphosphorylation of CaMKII as well as PKA target sites at ryanodine receptor type-2 (-S2814 and -S2808) and phospholamban (-Thr17, -S16). Enhancement of late INa did not alter Ca2+-transient amplitude or SR-Ca2+-load. However, upon late INa activation and simultaneous CaMKII inhibition, Ca2+-transient amplitude and SR-Ca2+-load were increased, whereas PKA inhibition reduced Ca2+-transient amplitude and load and additionally slowed Ca2+ elimination. In atrial CMs from patients with atrial fibrillation, inhibition of late INa, CaMKII, or PKA reduced the SR-Ca2+-leak. Conclusion Late INa exerts distinct effects on Ca2+ homeostasis in atrial myocardium through activation of CaMKII and PKA. Inhibition of late INa represents a potential approach to attenuate CaMKII activation and decreases SR-Ca2+-leak in atrial rhythm disorders. The interconnection with the cAMP/PKA system further increases the antiarrhythmic potential of late INa inhibition. PMID:25990311

Connes' embedding problem and Tsirelson's problem

DOE Office of Scientific and Technical Information (OSTI.GOV)

Junge, M.; Palazuelos, C.; Navascues, M.

2011-01-15

We show that Tsirelson's problem concerning the set of quantum correlations and Connes' embedding problem on finite approximations in von Neumann algebras (known to be equivalent to Kirchberg's QWEP conjecture) are essentially equivalent. Specifically, Tsirelson's problem asks whether the set of bipartite quantum correlations generated between tensor product separated systems is the same as the set of correlations between commuting C{sup *}-algebras. Connes' embedding problem asks whether any separable II{sub 1} factor is a subfactor of the ultrapower of the hyperfinite II{sub 1} factor. We show that an affirmative answer to Connes' question implies a positive answer to Tsirelson's. Conversely,more » a positive answer to a matrix valued version of Tsirelson's problem implies a positive one to Connes' problem.« less

Multi-harmonic quantum dot optomechanics in fused LiNbO3-(Al)GaAs hybrids

NASA Astrophysics Data System (ADS)

Nysten, Emeline D. S.; Huo, Yong Heng; Yu, Hailong; Song, Guo Feng; Rastelli, Armando; Krenner, Hubert J.

2017-11-01

We fabricated an acousto-optic semiconductor hybrid device for strong optomechanical coupling of individual quantum emitters and a surface acoustic wave. Our device comprises of a surface acoustic wave chip made from highly piezoelectric LiNbO3 and a GaAs-based semiconductor membrane with an embedded layer of quantum dots. Employing multi-harmonic transducers, we generated sound waves on LiNbO3 over a wide range of radio frequencies. We monitored their coupling to and propagation across the semiconductor membrane, both in the electrical and optical domain. We demonstrate the enhanced optomechanical tuning of the embedded quantum dots with increasing frequencies. This effect was verified by finite element modelling of our device geometry and attributed to an increased localization of the acoustic field within the semiconductor membrane. For moderately high acoustic frequencies, our simulations predict strong optomechanical coupling, making our hybrid device ideally suited for applications in semiconductor based quantum acoustics.

On-chip beamsplitter operation on single photons from quasi-resonantly excited quantum dots embedded in GaAs rib waveguides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rengstl, U.; Schwartz, M.; Herzog, T.

2015-07-13

We present an on-chip beamsplitter operating on a single-photon level by means of a quasi-resonantly driven InGaAs/GaAs quantum dot. The single photons are guided by rib waveguides and split into two arms by an evanescent field coupler. Although the waveguides themselves support the fundamental TE and TM modes, the measured degree of polarization (∼90%) reveals the main excitation and propagation of the TE mode. We observe the preserved single-photon nature of a quasi-resonantly excited quantum dot by performing a cross-correlation measurement on the two output arms of the beamsplitter. Additionally, the same quantum dot is investigated under resonant excitation, wheremore » the same splitting ratio is observed. An autocorrelation measurement with an off-chip beamsplitter on a single output arm reveal the single-photon nature after evanescent coupling inside the on-chip splitter. Due to their robustness, adjustable splitting ratio, and their easy implementation, rib waveguide beamsplitters with embedded quantum dots provide a promising step towards fully integrated quantum circuits.« less

Differential modulation of late sodium current by protein kinase A in R1623Q mutant of LQT3

PubMed Central

Tsurugi, Takuo; Nagatomo, Toshihisa; Abe, Haruhiko; Oginosawa, Yasushi; Takemasa, Hiroko; Kohno, Ritsuko; Makita, Naomasa; Makielski, Jonathan C.; Otsuji, Yutaka

2009-01-01

Aims In the type 3 long QT syndrome (LQT3), shortening of the QT interval by overdrive pacing is used to prevent life-threatening arrhythmias. However, it is unclear whether accelerated heart rate induced by β-adrenergic agents produces similar effects on the late sodium current (INa) to those by overdrive pacing therapy. We analyzed the β-adrenergic-like effects of protein kinase A and fluoride on INa in R1623Q mutant channels. Main methods cDNA encoding either wild-type (WT) or R1623Q mutant of hNav1.5 was stably transfected into HEK293 cells. INa was recorded using a whole-cell patch-clamp technique at 23 °C. Key findings In R1623Q channels, 2 mM pCPT-AMP and 120 mM fluoride significantly delayed macroscopic current decay and increased relative amplitude of the late INa in a time-dependent manner. Modulations of peak INa gating kinetics (activation, inactivation, recovery from inactivation) by fluoride were similar in WT and R1623Q channels. The effects of fluoride were almost completely abolished by concomitant dialysis with a protein kinase inhibitor. We also compared the effect of pacing with that of β-adrenergic stimulation by analyzing the frequency-dependence of the late INa. Fluoride augmented frequency-dependent reduction of the late INa, which was due to preferential delay of recovery of late INa. However, the increase in late INa by fluoride at steady-state was more potent than the frequency-dependent reduction of late INa. Significance Different basic mechanisms participate in the QT interval shortening by pacing and β-adrenergic stimulation in the LQT3. PMID:19167409

Growing InGaAs quasi-quantum wires inside semi-rhombic shaped planar InP nanowires on exact (001) silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Han, Yu; Li, Qiang; Lau, Kei May, E-mail: eekmlau@ust.hk

We report InGaAs quasi-quantum wires embedded in planar InP nanowires grown on (001) silicon emitting in the 1550 nm communication band. An array of highly ordered InP nanowire with semi-rhombic cross-section was obtained in pre-defined silicon V-grooves through selective-area hetero-epitaxy. The 8% lattice mismatch between InP and Si was accommodated by an ultra-thin stacking disordered InP/GaAs nucleation layer. X-ray diffraction and transmission electron microscope characterizations suggest excellent crystalline quality of the nanowires. By exploiting the morphological evolution of the InP and a self-limiting growth process in the V-grooves, we grew embedded InGaAs quantum-wells and quasi-quantum-wires with tunable shape and position. Roommore » temperature analysis reveals substantially improved photoluminescence in the quasi-quantum wires as compared to the quantum-well reference, due to the reduced intrusion defects and enhanced quantum confinement. These results show great promise for integration of III-V based long wavelength nanowire lasers on the well-established (001) Si platform.« less

Luminescence of CdSe/ZnS quantum dots infiltrated into an opal matrix

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gruzintsev, A. N.; Emelchenko, G. A.; Masalov, V. M.

The effect of the photonic band gap in the photonic crystal, the synthesized SiO{sub 2} opal with embedded CdSe/ZnS quantum dots, on its luminescence in the visible spectral region is studied. It is shown that the position of the photonic band gap in the luminescence and reflectance spectra for the infiltrated opal depends on the diameter of the constituent nanospheres and on the angle of recording the signal. The optimal conditions for embedding the CdSe/ZnS quantum dots from the solution into the opal matrix are determined. It is found that, for the opal-CdSe/ZnS nanocomposites, the emission intensity decreases and themore » luminescence decay time increases in the spatial directions, in which the spectral positions of the photonic band gap and the luminescence peak of the quantum dots coincide.« less

Individual electron and hole localization in submonolayer InN quantum sheets embedded in GaN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feix, F., E-mail: feix@pdi-berlin.de; Flissikowski, T.; Chèze, C.

2016-07-25

We investigate sub-monolayer InN quantum sheets embedded in GaN(0001) by temperature-dependent photoluminescence spectroscopy under both continuous-wave and pulsed excitation. Both the peak energy and the linewidth of the emission band associated with the quantum sheets exhibit an anomalous dependence on temperature indicative of carrier localization. Photoluminescence transients reveal a power law decay at low temperatures reflecting that the recombining electrons and holes occupy spatially separate, individual potential minima reminiscent of conventional (In,Ga)N(0001) quantum wells exhibiting the characteristic disorder of a random alloy. At elevated temperatures, carrier delocalization sets in and is accompanied by a thermally activated quenching of the emission.more » We ascribe the strong nonradiative recombination to extended states in the GaN barriers and confirm our assumption by a simple rate-equation model.« less

High-power diode laser modules from 410 nm to 2200 nm

NASA Astrophysics Data System (ADS)

Köhler, Bernd; Kissel, Heiko; Flament, Marco; Wolf, Paul; Brand, Thomas; Biesenbach, Jens

2010-02-01

In this work we report on high-power diode laser modules covering a wide spectral range from 410 nm to 2200 nm. Driven by improvements in the technology of diode laser bars with non-standard wavelengths, such systems are finding a growing number of applications. Fields of application that benefit from these developments are direct medical applications, printing industry, defense technology, polymer welding and pumping of solid-sate lasers. Diode laser bars with standard wavelengths from 800 - 1000 nm are based on InGaAlAs, InGaAlP, GaAsP or InGaAs semiconductor material with an optical power of more than 100 W per bar. For shorter wavelengths from 630 - 690 nm InGaAlP semiconductor material is used with an optical power of about 5 W per bar. Extending the wavelength range beyond 1100 nm is realized by using InGaAs on InP substrates or with InAs quantum dots embedded in GaAs for wavelengths up to 1320 nm and (AlGaIn)(AsSb) for wavelengths up to 2200 nm. In these wavelength ranges the output power per bar is about 6 - 20 W. In this paper we present a detailed characterization of these diode laser bars, including measurements of power, spectral data and life time data. In addition, we will show different fiber coupled modules, ranging from 638 nm with 13 W output power (400 μm fiber, NA 0.22) up to 1940 nm with more than 50 W output power (600 μm fiber NA 0.22).

Superradiant phase transition with graphene embedded in one dimensional optical cavity

NASA Astrophysics Data System (ADS)

Li, Benliang; Liu, Tao; Hewak, Daniel W.; Wang, Qi Jie

2018-01-01

We theoretically investigate the cavity QED of graphene embedded in an optical cavity under perpendicular magnetic field. We consider the coupling of cyclotron transition and a multimode cavity described by a multimode Dicke model. This model exhibits a superradiant quantum phase transition, which we describe exactly in an effective Hamiltonian approach. The complete excitation spectrum in both the normal phase and superradiant phase regimes is given. In contrast to the single mode case, multimode coupling of cavity photon and cyclotron transition can greatly reduce the critical vacuum Rabi frequency required for quantum phase transition, and dramatically enhance the superradiant emission by fast modulating the Hamiltonian. Our work paves a way to experimental explorations of quantum phase transitions in solid state systems.

Thermoelectric effect in an Aharonov-Bohm ring with an embedded quantum dot

PubMed Central

2012-01-01

Thermoelectric effect is studied in an Aharonov-Bohm interferometer with an embedded quantum dot (QD) in the Coulomb blockade regime. The electrical conductance, electron thermal conductance, thermopower, and thermoelectric figure-of-merit are calculated by using the Keldysh Green's function method. It is found that the figure-of-merit ZT of the QD ring may be quite high due to the Fano effect originated from the quantum interference effect. Moreover, the thermoelectric efficiency is sensitive to the magnitude of the dot-lead and inter-lead coupling strengthes. The effect of intradot Coulomb repulsion on ZT is significant in the weak-coupling regime, and then large ZT values can be obtained at rather high temperature. PMID:22369454

The presence of INA proteins on the surface of single cells of Pseudomonas syringae R10.79 isolated from rain

NASA Astrophysics Data System (ADS)

Šantl-Temkiv, Tina; Ling, Meilee; Holm, Stine; Finster, Kai; Boesen, Thomas

2016-04-01

One of the important open questions in atmospheric ice nucleation is the impact of bioaerosols on the ice content of mix phase clouds (DeMott and Prenni 2010). Biogenic ice nuclei have a unique capacity of facilitating ice formation at temperatures between -1 and -10 °C. The model biogenic ice nuclei are produced by a few species of plant-surface bacteria, such as Pseudomonas syringae, that are commonly transported through the atmosphere. These bacterial species have highly specialized proteins, the so-called ice nucleation active (INA) proteins, which are exposed at the outer membrane surface of the cell where they promote ice particle formation. The mechanisms behind the onset of INA protein synthesis in single bacterial cells are not well understood. We performed a laboratory study in order to (i) investigate the presence of INA proteins on single bacterial cells and (ii) understand the conditions that induce INA protein production. We previously isolated an INA-positive strain of Pseudomonas syringae from rain samples collected in Denmark. Bacterial cells initiated ice nucleation activity at temperatures ≤-2°C and the cell fragments at temperatures ≤-8°C (Šantl-Temkiv et al 2015). We determined the amino-acid sequence of the INA protein and used the sequence to produce custom-made antibodies (GenScript, Germany). These antibodies were used to specifically stain and visualize the INA protein on the surfaces of single cells, which can then be quantified by a technique called flow cytometry. The synthesis of INA proteins by individual cells was followed during a batch growth experiment. An unusually high proportion of cells that were adapting to the new conditions prior to growth produced INA proteins (~4.4% of all cells). A smaller fraction of actively growing cells was carrying INA proteins (~1.2 % of all cells). The cells that stopped growing due to unfavorable conditions had the lowest fraction of cells carrying INA proteins (~0.5 % of all cells). To our surprise, exposure of cells to low temperatures, which is normally considered to be the main driver of the INA protein synthesis, had no or even a negative effect on the proportion of cells with INA proteins. Our results suggest that at certain conditions a high proportion of Pseudomonas syringae cells produces INA proteins and that this proportion depends on the physiological state of the cells. This and similar studies will ultimately improve our understanding of the quantitative role bacterial INA proteins play in atmospheric processes. References DeMott, P., Prenni, A.J. (2010): New Directions: Need for defining the numbers and sources of biological aerosols acting as ice nuclei. Atmos Environ. doi: 10.1016/j.atmosenv.2010.02.032 Šantl-Temkiv, T., Sahyoun, M., Finster, K., Hartmann, S., Augustin-Bauditz, S, Stratmann, F. et al (2015): Characterization of airborne ice-nucleation-active bacteria and bacterial fragments. Atmos Environ. doi: ttp://doi.org/10.1016/j.atmosenv.2015.02.060

How kinetics drives the two- to three-dimensional transition in semiconductor strained heterostructures: The case of InAs/GaAs(001)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Arciprete, F.; Placidi, E.; Sessi, V.

2006-07-24

The two- to three-dimensional growth mode transition in the InAs/GaAs(001) heterostructure has been investigated by means of atomic force microscopy. The kinetics of the density of three-dimensional islands indicates two transition onsets at 1.45 and 1.59 ML of InAs coverage, corresponding to two separate families, small and large dots. According to the scaling analysis and volume measurements, the transition between the two families of quantum dots and the explosive nucleation of the large ones is triggered by the erosion of the step edges.

Radio frequency charge parity meter.

PubMed

Schroer, M D; Jung, M; Petersson, K D; Petta, J R

2012-10-19

We demonstrate a total charge parity measurement by detecting the radio frequency signal that is reflected by a lumped-element resonator coupled to a single InAs nanowire double quantum dot. The high frequency response of the circuit is used to probe the effects of the Pauli exclusion principle at interdot charge transitions. Even parity charge transitions show a striking magnetic field dependence that is due to a singlet-triplet transition, while odd parity transitions are relatively insensitive to a magnetic field. The measured response agrees well with cavity input-output theory, allowing accurate measurements of the interdot tunnel coupling and the resonator-charge coupling rate g(c)/2π~17 MHz.

Coherent quantum transport in hybrid Nb-InGaAs-Nb Josephson junctions

NASA Astrophysics Data System (ADS)

Delfanazari, Kaveh; Puddy, R.; Ma, P.; Cao, M.; Yi, T.; Gul, Y.; Farrer, I.; Ritchie, D.; Joyce, H.; Kelly, M.; Smith, C.

Because of the recently reported detection of Majorana fermions states at the superconductor-semiconductor (S-Sm) interface in InAs nanowire devices, the study of hybrid structures has received renewed interest. In this paper we present experimental results on proximity induced superconductivity in a high-mobility two-dimensional electron gas in InGaAs heterostructures. Eight symmetric S-Sm-S Josephson junctions were fabricated on a single InGaAs chip and each junction was measured individually using a lock-in measurement technique. The superconducting electrodes were made of Niobium (Nb). The measurements were carried out in a dilution fridge with a base temperature of 40 mK, and the quantum transport of junctions were measured below 800 mK. Owing to Andreev reflections at the S-Sm interfaces, the differential resistance (dV/dI) versus V curve shows the well-known subharmonic energy gap structure (SGS) at V = 2ΔNb/ne. The SGS features suppressed significantly with increasing temperature and magnetic field, leading to a shift of the SGSs toward zero bias. Our result paves the way for development of highly transparent hybrid S-Sm-S junctions and coherent circuits for quantum devices capable of performing quantum logic and processing functions.

Growth of InAs NWs with controlled morphology by CVD

NASA Astrophysics Data System (ADS)

Huang, Y. S.; Li, M.; Wang, J.; Xing, Y.; Xu, H. Q.

2017-06-01

We report on the growth of single crystal InAs NWs on Si/SiOx substrates by chemical vapor deposition (CVD). By adjusting growth parameters, the diameters, morphology, length and the proportion of superlattice ZB InAs NWs (NWs) can be controlled on a Si/SiOx substrate. Our work provides a low-cost route to grow and phase-engineer single crystal InAs NWs for a wide range of potential applications.

InaSAFE applications in disaster preparedness

NASA Astrophysics Data System (ADS)

Pranantyo, Ignatius Ryan; Fadmastuti, Mahardika; Chandra, Fredy

2015-04-01

Disaster preparedness activities aim to reduce the impact of disasters by being better prepared to respond when a disaster occurs. In order to better anticipate requirements during a disaster, contingency planning activities can be undertaken prior to a disaster based on a realistic disaster scenario. InaSAFE is a tool that can inform this process. InaSAFE is a free and open source software that estimates the impact to people and infrastructure from potential hazard scenarios. By using InaSAFE, disaster managers can develop scenarios of disaster impacts (people and infrastructures affected) to inform their contingency plan and emergency response operation plan. While InaSAFE provides the software framework exposure data and hazard data are needed as inputs to run this software. Then InaSAFE can be used to forecast the impact of the hazard scenario to the exposure data. InaSAFE outputs include estimates of the number of people, buildings and roads are affected, list of minimum needs (rice and clean water), and response checklist. InaSAFE is developed by Indonesia's National Disaster Management Agency (BNPB) and the Australian Government, through the Australia-Indonesia Facility for Disaster Reduction (AIFDR), in partnership with the World Bank - Global Facility for Disaster Reduction and Recovery (GFDRR). This software has been used in many parts of Indonesia, including Padang, Maumere, Jakarta, and Slamet Mountain for emergency response and contingency planning.

Hybrid Techniques for Quantum Circuit Simulation

DTIC Science & Technology

2014-02-01

Detailed theorems and proofs describing these results are included in our published manuscript [10]. Embedding of stabilizer geometry in the Hilbert ...space. We also describe how the discrete embedding of stabilizer geometry in Hilbert space complicates several natural geometric tasks. As described...the Hilbert space in which they are embedded, and that they are arranged in a fairly uniform pattern. These factors suggest that, if one seeks a

Identifying the minor set cover of dense connected bipartite graphs via random matching edge sets

NASA Astrophysics Data System (ADS)

Hamilton, Kathleen E.; Humble, Travis S.

2017-04-01

Using quantum annealing to solve an optimization problem requires minor embedding a logic graph into a known hardware graph. In an effort to reduce the complexity of the minor embedding problem, we introduce the minor set cover (MSC) of a known graph G: a subset of graph minors which contain any remaining minor of the graph as a subgraph. Any graph that can be embedded into G will be embeddable into a member of the MSC. Focusing on embedding into the hardware graph of commercially available quantum annealers, we establish the MSC for a particular known virtual hardware, which is a complete bipartite graph. We show that the complete bipartite graph K_{N,N} has a MSC of N minors, from which K_{N+1} is identified as the largest clique minor of K_{N,N}. The case of determining the largest clique minor of hardware with faults is briefly discussed but remains an open question.

Identifying the minor set cover of dense connected bipartite graphs via random matching edge sets

DOE PAGES

Hamilton, Kathleen E.; Humble, Travis S.

2017-02-23

Using quantum annealing to solve an optimization problem requires minor embedding a logic graph into a known hardware graph. We introduce the minor set cover (MSC) of a known graph GG : a subset of graph minors which contain any remaining minor of the graph as a subgraph, in an effort to reduce the complexity of the minor embedding problem. Any graph that can be embedded into GG will be embeddable into a member of the MSC. Focusing on embedding into the hardware graph of commercially available quantum annealers, we establish the MSC for a particular known virtual hardware, whichmore » is a complete bipartite graph. Furthermore, we show that the complete bipartite graph K N,N has a MSC of N minors, from which K N+1 is identified as the largest clique minor of K N,N. In the case of determining the largest clique minor of hardware with faults we briefly discussed this open question.« less

Control of propagation of spatially localized polariton wave packets in a Bragg mirror with embedded quantum wells

NASA Astrophysics Data System (ADS)

Sedova, I. E.; Chestnov, I. Yu.; Arakelian, S. M.; Kavokin, A. V.; Sedov, E. S.

2018-01-01

We considered the nonlinear dynamics of Bragg polaritons in a specially designed stratified semiconductor structure with embedded quantum wells, which possesses a convex dispersion. The model for the ensemble of single periodically arranged quantum wells coupled with the Bragg photon fields has been developed. In particular, the generalized Gross-Pitaevskii equation with the non-parabolic dispersion has been obtained for the Bragg polariton wave function. We revealed a number of dynamical regimes for polariton wave packets resulting from competition of the convex dispersion and the repulsive nonlinearity effects. Among the regimes are spreading, breathing and soliton propagation. When the control parameters including the exciton-photon detuning, the matter-field coupling and the nonlinearity are manipulated, the dynamical regimes switch between themselves.

Reversible flexible structural changes in multidimensional MOFs by guest molecules (I{sub 2}, NH{sub 3}) and thermal stimulation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Yang; Li, Libo; Yang, Jiangfeng

Three metal–organic frameworks (MOFs), [Cu(INA){sub 2}], [Cu(INA){sub 2}I{sub 2}] and [Cu(INA){sub 2}(H{sub 2}O){sub 2}(NH{sub 3}){sub 2}], were synthesized with 3D, 2D, and 0D structures, respectively. Reversible flexible structural changes of these MOFs were reported. Through high temperature (60–100 °C) stimulation of I{sub 2} or ambient temperature stimulation of NH{sub 3}, [Cu(INA){sub 2}] (3D) converted to [Cu(INA){sub 2}I{sub 2}] (2D) and [Cu(INA){sub 2}(H{sub 2}O){sub 2}(NH{sub 3}){sub 2}] (0D); as the temperature increased to 150 °C, the MOFs changed back to their original form. In this way, this 3D MOF has potential application in the capture of I{sub 2} and NH{sub 3}more » from polluted water and air. XRD, TGA, SEM, NH{sub 3}-TPD, and the measurement of gas adsorption were used to describe the changes in processes regarding the structure, morphology, and properties. - Graphical abstract: Through I{sub 2}, NH{sub 3} molecules and thermal stimulation, the three MOFs can achieve reversible flexible structural changes. Different methods were used to prove the flexible reversible changes. - Highlights: • [Cu(INA){sub 2}] can flexible transform to [Cu(INA){sub 2}I{sub 2}] and [Cu(INA){sub 2}(H{sub 2}O){sub 2}(NH{sub 3}){sub 2}] by adsorbing I{sub 2} or NH{sub 3}. • The reversible flexible transformation related to material source, temperature and concentration. • Potential applications for the capture of I{sub 2} and NH{sub 3} from polluted water or air.« less

Inhibitory effects of palmitoylcarnitine and lysophosphatidylcholine on the sodium current of cardiac ventricular cells.

PubMed

Sato, T; Kiyosue, T; Arita, M

1992-01-01

We investigated the effects of ischemia-related amphipathic compounds, palmitoylcarnitine (PamCar, 0.5-50 microM) and lysophosphatidylcholine (lysoPtdCho, 5-50 microM) on sodium current (INa) of guinea-pig ventricular myocytes. The cells were perfused with low-Na+ (60 mM) Tyrode's solution, and Ca2+ and K+ currents were blocked by external Co2+ (3 mM) and internal Cs+ (140 mM), respectively. INa was elicited by depolarizing voltage steps from a holding potential of -100 mV at a temperature of 33 degrees C. PamCar (5 microM) decreased the peak INa (attained at -20 mV or -30 mV) from 6.1 +/- 2.1 nA to 3.9 +/- 1.4 nA (n = 11), or by 36.1% within 2 min, and shifted the curve of steady-state INa inactivation by 5.4 mV in the positive direction (from -76.3 +/- 4.6 mV, control to -70.9 +/- 4.0 mV, in PamCar, n = 4). Partial restoration of the amplitude and the shift of the steady-state inactivation curve of INa was attained after washout of PamCar. In contrast, lysoPtdCho at concentrations over 10 microM irreversibly depressed the INa within 0.5-3 min and the reduction of INa was followed by cell contracture or cell death (n = 9). The survival time, defined as a period from the start of lysoPtdCho application to the time of the last successful recording of the INa (before evolution of sudden changes in the holding current), depended on the concentrations of lysoPtdCho. Both PamCar and lysoPtdCho retarded the time course of activation and inactivation of INa.(ABSTRACT TRUNCATED AT 250 WORDS)

A synchronous game for binary constraint systems

NASA Astrophysics Data System (ADS)

Kim, Se-Jin; Paulsen, Vern; Schafhauser, Christopher

2018-03-01

Recently, Slofstra proved that the set of quantum correlations is not closed. We prove that the set of synchronous quantum correlations is not closed, which implies his result, by giving an example of a synchronous game that has a perfect quantum approximate strategy but no perfect quantum strategy. We also exhibit a graph for which the quantum independence number and the quantum approximate independence number are different. We prove new characterisations of synchronous quantum approximate correlations and synchronous quantum spatial correlations. We solve the synchronous approximation problem of Dykema and the second author, which yields a new equivalence of Connes' embedding problem in terms of synchronous correlations.

Perturbatively deformed defects in Pöschl-Teller-driven scenarios for quantum mechanics

NASA Astrophysics Data System (ADS)

Bernardini, Alex E.; da Rocha, Roldão

2016-07-01

Pöschl-Teller-driven solutions for quantum mechanical fluctuations are triggered off by single scalar field theories obtained through a systematic perturbative procedure for generating deformed defects. The analytical properties concerning the quantum fluctuations in one-dimension, zero-mode states, first- and second-excited states, and energy density profiles are all obtained from deformed topological and non-topological structures supported by real scalar fields. Results are firstly derived from an integrated λϕ4 theory, with corresponding generalizations applied to starting λχ4 and sine-Gordon theories. By focusing our calculations on structures supported by the λϕ4 theory, the outcome of our study suggests an exact quantitative correspondence to Pöschl-Teller-driven systems. Embedded into the perturbative quantum mechanics framework, such a correspondence turns into a helpful tool for computing excited states and continuous mode solutions, as well as their associated energy spectrum, for quantum fluctuations of perturbatively deformed structures. Perturbative deformations create distinct physical scenarios in the context of exactly solvable quantum systems and may also work as an analytical support for describing novel braneworld universes embedded into a 5-dimensional gravity bulk.

A case study in programming a quantum annealer for hard operational planning problems

NASA Astrophysics Data System (ADS)

Rieffel, Eleanor G.; Venturelli, Davide; O'Gorman, Bryan; Do, Minh B.; Prystay, Elicia M.; Smelyanskiy, Vadim N.

2015-01-01

We report on a case study in programming an early quantum annealer to attack optimization problems related to operational planning. While a number of studies have looked at the performance of quantum annealers on problems native to their architecture, and others have examined performance of select problems stemming from an application area, ours is one of the first studies of a quantum annealer's performance on parametrized families of hard problems from a practical domain. We explore two different general mappings of planning problems to quadratic unconstrained binary optimization (QUBO) problems, and apply them to two parametrized families of planning problems, navigation-type and scheduling-type. We also examine two more compact, but problem-type specific, mappings to QUBO, one for the navigation-type planning problems and one for the scheduling-type planning problems. We study embedding properties and parameter setting and examine their effect on the efficiency with which the quantum annealer solves these problems. From these results, we derive insights useful for the programming and design of future quantum annealers: problem choice, the mapping used, the properties of the embedding, and the annealing profile all matter, each significantly affecting the performance.

Electronic and optical properties of graphene-like InAs: An ab initio study

NASA Astrophysics Data System (ADS)

Sohrabi, Leila; Boochani, Arash; Ali Sebt, S.; Mohammad Elahi, S.

2018-03-01

The present work initially investigates structural, optical, and electronic properties of graphene-like InAs by using the full potential linear augmented plane wave method in the framework of density functional theory and is then compared with the bulk Indium Arsenide in the wurtzite phase. The lattice parameters are optimized with GGA-PBE and LDA approximations for both 2D- and 3D-InAs. In order to study the electronic properties of graphene-like InAs and bulk InAs in the wurtzite phase, the band gap is calculated by GGA-PBG and GGA-EV approximations. Moreover, optical parameters of graphene-like InAs and bulk InAs such as the real and imaginary parts of dielectric function, electron energy loss function, refractivity, extinction and absorption coefficients, and optical conductivity are investigated. Plasmonic frequencies of 2D- and 3D-InAs are also calculated by using maximum electron energy loss function and the roots of the real part of the dielectric function.

Integrated photonics using colloidal quantum dots

NASA Astrophysics Data System (ADS)

Menon, Vinod M.; Husaini, Saima; Okoye, Nicky; Valappil, Nikesh V.

2009-11-01

Integrated photonic devices were realized using colloidal quantum dot composites such as flexible microcavity laser, microdisk emitters and integrated active-passive waveguides. The microcavity laser structure was realized using spin coating and consisted of an all-polymer distributed Bragg reflector with a poly-vinyl carbazole cavity layer embedded with InGaP/ZnS colloidal quantum dots. These microcavities can be peeled off the substrate yielding a flexible structure that can conform to any shape and whose emission spectra can be mechanically tuned. Planar photonic devices consisting of vertically coupled microring resonators, microdisk emitters, active-passive integrated waveguide structures and coupled active microdisk resonators were realized using soft lithography, photo-lithography, and electron beam lithography, respectively. The gain medium in all these devices was a composite consisting of quantum dots embedded in SU8 matrix. Finally, the effect of the host matrix on the optical properties of the quantum dots using results of steady-state and time-resolved luminescence measurements was determined. In addition to their specific functionalities, these novel device demonstrations and their development present a low-cost alternative to the traditional photonic device fabrication techniques.

Photonic emitters and circuits based on colloidal quantum dot composites

NASA Astrophysics Data System (ADS)

Menon, Vinod M.; Husaini, Saima; Valappil, Nikesh; Luberto, Matthew

2009-02-01

We discuss our work on light emitters and photonic circuits realized using colloidal quantum dot composites. Specifically we will report our recent work on flexible microcavity laser, microdisk emitters and integrated active - passive waveguides. The entire microcavity laser structure was realized using spin coating and consisted of an all-polymer distributed Bragg reflector with a poly-vinyl carbazole cavity layer embedded with InGaP/ZnS colloidal quantum dots. These microcavities can be peeled off the substrate yielding a flexible structure that can conform to any shape and whose emission spectra can be mechanically tuned. The microdisk emitters and the integrated waveguide structures were realized using soft lithography and photo-lithography, respectively and were fabricated using a composite consisting of quantum dots embedded in SU8 matrix. Finally, we will discuss the effect of the host matrix on the optical properties of the quantum dots using results of steady-state and time-resolved luminescence measurements. In addition to their specific functionalities, these novel device demonstrations and their development present a low cost alternative to the traditional photonic device fabrication techniques.

Quantum-dot light-emitting diodes utilizing CdSe /ZnS nanocrystals embedded in TiO2 thin film

NASA Astrophysics Data System (ADS)

Kang, Seung-Hee; Kumar, Ch. Kiran; Lee, Zonghoon; Kim, Kyung-Hyun; Huh, Chul; Kim, Eui-Tae

2008-11-01

Quantum-dot (QD) light-emitting diodes (LEDs) are demonstrated on Si wafers by embedding core-shell CdSe /ZnS nanocrystals in TiO2 thin films via plasma-enhanced metallorganic chemical vapor deposition. The n-TiO2/QDs /p-Si LED devices show typical p-n diode current-voltage and efficient electroluminescence characteristics, which are critically affected by the removal of QD surface ligands. The TiO2/QDs /Si system we presented can offer promising Si-based optoelectronic and electronic device applications utilizing numerous nanocrystals synthesized by colloidal solution chemistry.

Expression pattern of neuronal intermediate filament α-internexin in anterior pituitary gland and related tumors.

PubMed

Schult, D; Hölsken, A; Buchfelder, M; Schlaffer, S-M; Siegel, S; Kreitschmann-Andermahr, I; Fahlbusch, R; Buslei, R

2015-08-01

α-Internexin (INA) is a class IV neuronal intermediate filament protein that maintains the morphogenesis of neurons. It is expressed in developing neuroblasts and represents the major component of the cytoskeleton in cerebellar granule cells of adult central nervous system tissue. Data concerning INA expression in the human frontal pituitary lobe and related adenomas (PA) is missing. Using immunohistochemistry we examined the distribution pattern of INA in a large cohort of 152 PA, 11 atypical PA, 4 pituitary carcinomas and 20 normal pituitaries (overall n = 187). Quantity of INA protein expression was semi-quantitatively evaluated and grouped into five categories (0 = 0%; 1 = >0-5%; 2 = >5-35%; 3 = >35-80%; 4 = >80% of cells). Cellular staining intensity of INA appeared significantly higher in gonadotropinomas (Go, n = 62), null cell adenomas (NC, n = 7) and thyrotropinomas (TSHomas, n = 7) compared to the other tumor subtypes (p ≤ 0.001). Furthermore, Go and NC showed a peculiar pseudorosette-like staining pattern surrounding blood vessels in 85.5% (59/69) of cases. Interestingly, areas exhibiting homogenous INA staining were often associated with oncocytic cell changes and decreased immunohistochemically detectable hormone expression. Only 8.5% (8/94) of other PA showed a comparable INA distribution (p ≤ 0.001). Go, NC as well as TSHomas exhibit high levels of intracellular INA protein indicating neuronal transdifferentiation. A possible impact on pathogenesis and endocrine activity needs further investigation.

The effect of Ga pre-deposition on Si (111) surface for InAs nanowire selective area hetero-epitaxy

NASA Astrophysics Data System (ADS)

Liu, Ziyang; Merckling, Clement; Rooyackers, Rita; Franquet, Alexis; Richard, Olivier; Bender, Hugo; Vila, María; Rubio-Zuazo, Juan; Castro, Germán R.; Collaert, Nadine; Thean, Aaron; Vandervorst, Wilfried; Heyns, Marc

2018-04-01

Vertical InAs nanowires (NWs) grown on a Si substrate are promising building-blocks for next generation vertical gate-all-around transistor fabrication. We investigate the initial stage of InAs NW selective area epitaxy (SAE) on a patterned Si (111) substrate with a focus on the interfacial structures. The direct epitaxy of InAs NWs on a clean Si (111) surface is found to be challenging. The yield of vertical InAs NWs is low, as the SAE is accompanied by high proportions of empty holes, inclined NWs, and irregular blocks. In contrast, it is improved when the NW contains gallium, and the yield of vertical InxGa1-xAs NWs increased with higher Ga content. Meanwhile, unintentional Ga surface contamination on a patterned Si substrate induces high yield vertical InAs NW SAE, which is attributed to a GaAs-like seeding layer formed at the InAs/Si interface. The role of Ga played in the III-V NW nucleation on Si is further discussed. It stabilizes the B-polarity on a non-polar Si (111) surface and enhances the nucleation. Therefore, gallium incorporation on a Si surface is identified as an important enabler for vertical InAs NW growth. A new method for high yield (>99%) vertical InAs NW SAE on Si using an InGaAs nucleation layer is proposed based on this study.

Modeling direct band-to-band tunneling: From bulk to quantum-confined semiconductor devices

NASA Astrophysics Data System (ADS)

Carrillo-Nuñez, H.; Ziegler, A.; Luisier, M.; Schenk, A.

2015-06-01

A rigorous framework to study direct band-to-band tunneling (BTBT) in homo- and hetero-junction semiconductor nanodevices is introduced. An interaction Hamiltonian coupling conduction and valence bands (CVBs) is derived using a multiband envelope method. A general form of the BTBT probability is then obtained from the linear response to the "CVBs interaction" that drives the system out of equilibrium. Simple expressions in terms of the one-electron spectral function are developed to compute the BTBT current in two- and three-dimensional semiconductor structures. Additionally, a two-band envelope equation based on the Flietner model of imaginary dispersion is proposed for the same purpose. In order to characterize their accuracy and differences, both approaches are compared with full-band, atomistic quantum transport simulations of Ge, InAs, and InAs-Si Esaki diodes. As another numerical application, the BTBT current in InAs-Si nanowire tunnel field-effect transistors is computed. It is found that both approaches agree with high accuracy. The first one is considerably easier to conceive and could be implemented straightforwardly in existing quantum transport tools based on the effective mass approximation to account for BTBT in nanodevices.

Open-Source Software for Modeling of Nanoelectronic Devices

NASA Technical Reports Server (NTRS)

Oyafuso, Fabiano; Hua, Hook; Tisdale, Edwin; Hart, Don

2004-01-01

The Nanoelectronic Modeling 3-D (NEMO 3-D) computer program has been upgraded to open-source status through elimination of license-restricted components. The present version functions equivalently to the version reported in "Software for Numerical Modeling of Nanoelectronic Devices" (NPO-30520), NASA Tech Briefs, Vol. 27, No. 11 (November 2003), page 37. To recapitulate: NEMO 3-D performs numerical modeling of the electronic transport and structural properties of a semiconductor device that has overall dimensions of the order of tens of nanometers. The underlying mathematical model represents the quantum-mechanical behavior of the device resolved to the atomistic level of granularity. NEMO 3-D solves the applicable quantum matrix equation on a Beowulf-class cluster computer by use of a parallel-processing matrix vector multiplication algorithm coupled to a Lanczos and/or Rayleigh-Ritz algorithm that solves for eigenvalues. A prior upgrade of NEMO 3-D incorporated a capability for a strain treatment, parameterized for bulk material properties of GaAs and InAs, for two tight-binding submodels. NEMO 3-D has been demonstrated in atomistic analyses of effects of disorder in alloys and, in particular, in bulk In(x)Ga(1-x)As and in In(0.6)Ga(0.4)As quantum dots.

Direct generation of linearly polarized single photons with a deterministic axis in quantum dots

NASA Astrophysics Data System (ADS)

Wang, Tong; Puchtler, Tim J.; Patra, Saroj K.; Zhu, Tongtong; Ali, Muhammad; Badcock, Tom J.; Ding, Tao; Oliver, Rachel A.; Schulz, Stefan; Taylor, Robert A.

2017-07-01

We report the direct generation of linearly polarized single photons with a deterministic polarization axis in self-assembled quantum dots (QDs), achieved by the use of non-polar InGaN without complex device geometry engineering. Here, we present a comprehensive investigation of the polarization properties of these QDs and their origin with statistically significant experimental data and rigorous k·p modeling. The experimental study of 180 individual QDs allows us to compute an average polarization degree of 0.90, with a standard deviation of only 0.08. When coupled with theoretical insights, we show that these QDs are highly insensitive to size differences, shape anisotropies, and material content variations. Furthermore, 91% of the studied QDs exhibit a polarization axis along the crystal [1-100] axis, with the other 9% polarized orthogonal to this direction. These features give non-polar InGaN QDs unique advantages in polarization control over other materials, such as conventional polar nitride, InAs, or CdSe QDs. Hence, the ability to generate single photons with polarization control makes non-polar InGaN QDs highly attractive for quantum cryptography protocols.

Tunnel magnetoresistance for coherent spin-flip processes on an interacting quantum dot.

PubMed

Rudziński, W

2009-01-28

Spin-polarized electronic tunneling through a quantum dot coupled to ferromagnetic electrodes is investigated within a nonequilibrium Green function approach. An interplay between coherent intradot spin-flip transitions, tunneling processes and Coulomb correlations on the dot is studied for current-voltage characteristics of the tunneling junction in parallel and antiparallel magnetic configurations of the leads. It is found that due to the spin-flip processes electric current in the antiparallel configuration tends to the current characteristics in the parallel configuration, thus giving rise to suppression of the tunnel magnetoresistance (TMR) between the threshold bias voltages at which the dot energy level becomes active in tunneling. Also, the effect of a negative differential conductance in symmetrical junctions, splitting of the conductance peaks, significant modulation of TMR peaks around the threshold bias voltages as well as suppression of the diode-like behavior in asymmetrical junctions is discussed in the context of coherent intradot spin-flip transitions. It is also shown that TMR may be inverted at selected gate voltages, which qualitatively reproduces the TMR behavior predicted recently for temperatures in the Kondo regime, and observed experimentally beyond the Kondo regime for a semiconductor InAs quantum dot coupled to nickel electrodes.

Quantum Rotational Effects in Nanomagnetic Systems

NASA Astrophysics Data System (ADS)

O'Keeffe, Michael F.

Quantum tunneling of the magnetic moment in a nanomagnet must conserve the total angular momentum. For a nanomagnet embedded in a rigid body, reversal of the magnetic moment will cause the body to rotate as a whole. When embedded in an elastic environment, tunneling of the magnetic moment will cause local elastic twists of the crystal structure. In this thesis, I will present a theoretical study of the interplay between magnetization and rotations in a variety of nanomagnetic systems which have some degree of rotational freedom. We investigate the effect of rotational freedom on the tunnel splitting of a nanomagnet which is free to rotate about its easy axis. Calculating the exact instanton of the coupled equations of motion shows that mechanical freedom of the particle renormalizes the easy axis anisotropy, increasing the tunnel splitting. To understand magnetization dynamics in free particles, we study a quantum mechanical model of a tunneling spin embedded in a rigid rotor. The exact energy levels for a symmetric rotor exhibit first and second order quantum phase transitions between states with different values the magnetic moment. A quantum phase diagram is obtained in which the magnetic moment depends strongly on the moments of inertia. An intrinsic contribution to decoherence of current oscillations of a flux qubit must come from the angular momentum it transfers to the surrounding body. Within exactly solvable models of a qubit embedded in a rigid body and an elastic medium, we show that slow decoherence is permitted if the solid is macroscopically large. The spin-boson model is one of the simplest representations of a two-level system interacting with a quantum harmonic oscillator, yet has eluded a closed-form solution. I investigate some possible approaches to understanding its spectrum. The Landau-Zener dynamics of a tunneling spin coupled to a torsional resonator show that for certain parameter ranges the system exhibits multiple Landau-Zener transitions. These transitions coincide in time with changes in the oscillator dynamics. A large number of spins on a single oscillator coupled only through the in-phase oscillations behaves as a single large spin, greatly enhancing the spin-phonon coupling.

Spontaneous emission inhibition of telecom-band quantum disks inside single nanowire on different substrates.

PubMed

Birowosuto, M D; Zhang, G; Yokoo, A; Takiguchi, M; Notomi, M

2014-05-19

We investigate the inhibited spontaneous emission of telecom-band InAs quantum disks (Qdisks) in InP nanowires (NWs). We have evaluated how the inhibition is affected by different disk diameter and thickness. We also compared the inhibition in standing InP NWs and those NWs laying on silica (SiO(2)), and silicon (Si) substrates. We found that the inhibition is altered when we put the NW on the high-refractive-index materials of Si. Experimentally, the inhibition factor ζ of the Qdisk emission at 1,500 nm decreases from 4.6 to 2.5 for NW on SiO(2) and Si substrates, respectively. Those inhibitions are even much smaller than that of 6.4 of the standing NW. The inhibition factors well agree with those calculated from the coupling of the Qdisk to the fundamental guided mode and the continuum of radiative modes. Our observation can be useful for the integration of the NW as light sources in the photonic nanodevices.

Revealing energy level structure of individual quantum dots by tunneling rate measured by single-electron sensitive electrostatic force spectroscopy.

PubMed

Roy-Gobeil, Antoine; Miyahara, Yoichi; Grutter, Peter

2015-04-08

We present theoretical and experimental studies of the effect of the density of states of a quantum dot (QD) on the rate of single-electron tunneling that can be directly measured by electrostatic force microscopy (e-EFM) experiments. In e-EFM, the motion of a biased atomic force microscope cantilever tip modulates the charge state of a QD in the Coulomb blockade regime. The charge dynamics of the dot, which is detected through its back-action on the capacitavely coupled cantilever, depends on the tunneling rate of the QD to a back-electrode. The density of states of the QD can therefore be measured through its effect on the energy dependence of tunneling rate. We present experimental data on individual 5 nm colloidal gold nanoparticles that exhibit a near continuous density of state at 77 K. In contrast, our analysis of already published data on self-assembled InAs QDs at 4 K clearly reveals discrete degenerate energy levels.

Mecanismes fondamentaux et dynamique d'interdiffusion dans les boites quantiques auto-assemblees InAs/InP

NASA Astrophysics Data System (ADS)

Dion, Carolyne

This thesis contributes both to the understanding of the fundamental mechanisms driving the intermixing process in the InAs/InP quantum dot (QD) system and to the development of effective intermixing techniques for the integration of these structures into the next generations of optoelectronic devices for optical telecommunications. More specifically, we study the interdiffusion occurring (i) during heterostructure growth and ( ii) under thermal annealing in structures subjected to grown-in defects (GID) introduced into epitaxial layer during growth at reduced temperatures, or damage created by low-energy phosphorus ion implantation (LEII). Interdiffusion is probed using photoluminescence (PL) spectroscopy in conjunction with calculations of optical transition energies obtained from a tight-binding model. These investigations are completed by structural analyses using transmission electron microscopy (TEM). The characterization of the self-assembled QDs produced from the heteroepitaxy of pure InAs on InP reveals that the structures are significantly interdiffused. All structures in a given sample have the same phosphorus concentration, with [P] varying from 6 to 10% depending on growth conditions. We suggest that such substantial P incorporation into InAs during heteroepitaxy results from the surface As/P exchange process as well as strain-driven alloying. We show that GID and LEII-mediated intermixing techniques are both promising for spatially selective band gap tuning of InAs/InP QDs, producing lower annealing temperature threshold for detectable PL modification and PL blueshifts up to ˜ 270 meV. Upon annealing, PL spectra from standard and GID samples exhibit progressive blueshifts without bandwidth broadening. In contrast, PL spectra from LEII samples show the rise of a high energy peak superimposed to the original spectrum, leading to an apparent overall blueshift with significant bandwidth broadening. On the other hand, as confirmed by TEM, the QD shape is found to convert from a truncated pyramid in the as-grown state into either a dome or double-convex lens in annealed GID and LEII samples, respectively. Based on the evolution of PL characteristics and QDs morphology, we demonstrate that thermally-induced intermixing and GID-enhanced intermixing are governed by the transport of group-V interstitials emanating from the InP epilayer, while LEII-enhanced intermixing is dominated by the motion of group-V vacancies released by the implantation damage. Finally, we determine the diffusion coefficients corresponding to these two atomistic diffusion mechanisms. Keywords: Semiconductors, InAs, InP, quantum dots, diffusion, intermixing, photoluminescence, transmission electron microscopy.

Studies of Positrons Trapped at Quantum-Dot Like Particles Embedded in Metal Surfaces

NASA Astrophysics Data System (ADS)

Fazleev, N. G.; Nadesalingam, M. P.; Weiss, A. H.

2009-03-01

Experimental studies of the positron annihilation induced Auger electron (PAES) spectra from the Fe-Cu alloy surfaces with quantum-dot like Cu nanoparticles embedded in Fe show that the PAES signal from Cu increase rapidly as the concentration of Cu is enhanced by vacuum annealing. These measurements indicate that almost 75% of positrons that annihilate with core electrons due so with Cu even though the surface concentration of Cu as measured by EAES is only 6%. This result suggests that positrons become localized at sites at the surface containing high concentration of Cu atoms before annihilation. These experimental results are investigated theoretically by performing calculations of the "image-potential" positron surface states and annihilation characteristics of the surface trapped positrons with relevant Fe and Cu core-level electrons for the clean Fe(100) and Cu(100) surfaces and for the Fe(100) surface with quantum-dot like Cu nanoparticles embedded in the top atomic layers of the host substrate. Estimates of the positron binding energy and positron annihilation characteristics reveal their strong sensitivity to the nanoparticle coverage. Computed core annihilation probabilities are compared with experimental ones estimated from the measured Auger peak intensities. The observed behavior of the Fe and Cu PAES signal intensities is explained by theoretical calculations as being due to trapping of positrons in the regions of Cu nanoparticles embedded in the top atomic layers of Fe.

22 CFR 40.51 - Labor certification.

Code of Federal Regulations, 2010 CFR

2010-04-01

... Foreign Relations DEPARTMENT OF STATE VISAS REGULATIONS PERTAINING TO BOTH NONIMMIGRANTS AND IMMIGRANTS... Immigrants § 40.51 Labor certification. (a) INA 212(a)(5) applicable only to certain immigrant aliens. INA 212(a)(5)(A) applies only to immigrant aliens described in INA 203(b)(2) or (3) who are seeking to...

20 CFR 668.650 - Can INA grantees exclude segments of the eligible population?

Code of Federal Regulations, 2014 CFR

2014-04-01

... eligible population? 668.650 Section 668.650 Employees' Benefits EMPLOYMENT AND TRAINING ADMINISTRATION... eligible population? (a) No, INA grantees cannot exclude segments of the eligible population. INA grantees... population within the service area for which the grantee was designated an equitable opportunity to receive...

20 CFR 668.650 - Can INA grantees exclude segments of the eligible population?

Code of Federal Regulations, 2012 CFR

2012-04-01

... eligible population? 668.650 Section 668.650 Employees' Benefits EMPLOYMENT AND TRAINING ADMINISTRATION... eligible population? (a) No, INA grantees cannot exclude segments of the eligible population. INA grantees... population within the service area for which the grantee was designated an equitable opportunity to receive...

20 CFR 668.650 - Can INA grantees exclude segments of the eligible population?

Code of Federal Regulations, 2013 CFR

2013-04-01

... eligible population? 668.650 Section 668.650 Employees' Benefits EMPLOYMENT AND TRAINING ADMINISTRATION... eligible population? (a) No, INA grantees cannot exclude segments of the eligible population. INA grantees... population within the service area for which the grantee was designated an equitable opportunity to receive...

22 CFR 40.41 - Public charge.

Code of Federal Regulations, 2011 CFR

2011-04-01

... significant assets, and the immigrant's assets, do not meet the Federal poverty line requirements of INA 213A.... (f) Use of Federal Poverty Line Where INA 213A Not Applicable. An immigrant visa applicant, not... under INA 212(a)(4), who does not demonstrate an annual income above the Federal poverty line, as...

22 CFR 40.41 - Public charge.

Code of Federal Regulations, 2014 CFR

2014-04-01

... significant assets, and the immigrant's assets, do not meet the Federal poverty line requirements of INA 213A.... (f) Use of Federal Poverty Line Where INA 213A Not Applicable. An immigrant visa applicant, not... under INA 212(a)(4), who does not demonstrate an annual income above the Federal poverty line, as...

22 CFR 40.41 - Public charge.

Code of Federal Regulations, 2013 CFR

2013-04-01

... significant assets, and the immigrant's assets, do not meet the Federal poverty line requirements of INA 213A.... (f) Use of Federal Poverty Line Where INA 213A Not Applicable. An immigrant visa applicant, not... under INA 212(a)(4), who does not demonstrate an annual income above the Federal poverty line, as...

22 CFR 40.41 - Public charge.

Code of Federal Regulations, 2012 CFR

2012-04-01

... significant assets, and the immigrant's assets, do not meet the Federal poverty line requirements of INA 213A.... (f) Use of Federal Poverty Line Where INA 213A Not Applicable. An immigrant visa applicant, not... under INA 212(a)(4), who does not demonstrate an annual income above the Federal poverty line, as...

22 CFR 40.41 - Public charge.

Code of Federal Regulations, 2010 CFR

2010-04-01

... significant assets, and the immigrant's assets, do not meet the Federal poverty line requirements of INA 213A.... (f) Use of Federal Poverty Line Where INA 213A Not Applicable. An immigrant visa applicant, not... under INA 212(a)(4), who does not demonstrate an annual income above the Federal poverty line, as...

How To Build an Integrated Neighborhood Approach to Support Community-Dwelling Older People?

PubMed Central

Cramm, Jane Murray; Nieboer, Anna Petra

2016-01-01

Background: Although the need for integrated neighborhood approaches (INAs) is widely recognized, we lack insight into strategies like INA. We describe diverse Dutch INA partners’ experiences to provide integrated person- and population-centered support to community-dwelling older people using an adapted version of Valentijn and colleagues’ integrated care model. Our main objective was to explore the experiences with INA participation. We sought to increase our understanding of the challenges facing these partners and identify factors facilitating and inhibiting integration within and among multiple levels. Methods: Twenty-one interviews with INA partners (including local health and social care organizations, older people, municipal officers, and a health insurer) were conducted and subjected to latent content analysis. Results: This study showed that integrated care and support provision through an INA is a complex, dynamic process requiring multilevel alignment of activities. The INA achieved integration at the personal, service, and professional levels only occasionally. Micro-level bottom-up initiatives were not aligned with top-down incentives, forcing community workers to establish integration despite rather than because of meso- and macro-level contexts. Conclusions: Top-down incentives should be better aligned with bottom-up initiatives. This study further demonstrated the importance of community-level engagement in integrated care and support provision. PMID:27616960

Influence of surface plasmon resonance of Sn nanoparticles and nanosheets on the photoluminescence and Raman spectra of SnS quantum dots

NASA Astrophysics Data System (ADS)

Warrier, Anita R.; Gandhimathi, R.

2018-04-01

We report on enhancement of photoluminescence of SnS quantum dots by embedding them in a mesh of Sn nanostructures. SnS quantum dots with band gap ˜2.7 eV are embedded in a mesh of Sn nanostructures, that are synthesized from tin chloride solution using sodium borohydride as reducing agent. The synthesized Sn nanostructures have a morphology dependent, tunable surface plasmon resonance ranging from UV region (295 nm) to visible region (400 nm) of the electromagnetic spectrum. In the SnS-Sn nanohybrids, the excitons are strongly coupled with plasmons leading to a shift in the excitonic binding energy (˜ 400 meV). Due to the influence of Sn nanoparticles on the SnS quantum dots, the photoluminescence and Raman line intensity is enhanced by an order of ˜103 The enhancement is more pronounced for Sn nanosheets due to the large surface area and visible light surface plasmon resonance.

Cubic GaN quantum dots embedded in zinc-blende AlN microdisks

NASA Astrophysics Data System (ADS)

Bürger, M.; Kemper, R. M.; Bader, C. A.; Ruth, M.; Declair, S.; Meier, C.; Förstner, J.; As, D. J.

2013-09-01

Microresonators containing quantum dots find application in devices like single photon emitters for quantum information technology as well as low threshold laser devices. We demonstrate the fabrication of 60 nm thin zinc-blende AlN microdisks including cubic GaN quantum dots using dry chemical etching techniques. Scanning electron microscopy analysis reveals the morphology with smooth surfaces of the microdisks. Micro-photoluminescence measurements exhibit optically active quantum dots. Furthermore this is the first report of resonator modes in the emission spectrum of a cubic AlN microdisk.

ProjectQ Software Framework

NASA Astrophysics Data System (ADS)

Steiger, Damian S.; Haener, Thomas; Troyer, Matthias

Quantum computers promise to transform our notions of computation by offering a completely new paradigm. A high level quantum programming language and optimizing compilers are essential components to achieve scalable quantum computation. In order to address this, we introduce the ProjectQ software framework - an open source effort to support both theorists and experimentalists by providing intuitive tools to implement and run quantum algorithms. Here, we present our ProjectQ quantum compiler, which compiles a quantum algorithm from our high-level Python-embedded language down to low-level quantum gates available on the target system. We demonstrate how this compiler can be used to control actual hardware and to run high-performance simulations.

String theory embeddings of nonrelativistic field theories and their holographic Hořava gravity duals.

PubMed

Janiszewski, Stefan; Karch, Andreas

2013-02-22

We argue that generic nonrelativistic quantum field theories with a holographic description are dual to Hořava gravity. We construct explicit examples of this duality embedded in string theory by starting with relativistic dual pairs and taking a nonrelativistic scaling limit.

Carrier diffusion as a measure of carrier/exciton transfer rate in InAs/InGaAsP/InP hybrid quantum dot-quantum well structures emitting at telecom spectral range

NASA Astrophysics Data System (ADS)

Rudno-Rudziński, W.; Biegańska, D.; Misiewicz, J.; Lelarge, F.; Rousseau, B.; Sek, G.

2018-01-01

We investigate the diffusion of photo-generated carriers (excitons) in hybrid two dimensional-zero dimensional tunnel injection structures, based on strongly elongated InAs quantum dots (called quantum dashes, QDashes) of various heights, designed for emission at around 1.5 μm, separated by a 3.5 nm wide barrier from an 8 nm wide In0.64Ga0.36As0.78P0.22 quantum well (QW). By measuring the spectrally filtered real space images of the photoluminescence patterns with high resolution, we probe the spatial extent of the emission from QDashes. Deconvolution with the exciting light spot shape allows us to extract the carrier/exciton diffusion lengths. For the non-resonant excitation case, the diffusion length depends strongly on excitation power, pointing at carrier interactions and phonons as its main driving mechanisms. For the case of excitation resonant with absorption in the adjacent QW, the diffusion length does not depend on excitation power for low excitation levels since the generated carriers do not have sufficient excess kinetic energy. It is also found that the diffusion length depends on the quantum-mechanical coupling strength between QW and QDashes, controlled by changing the dash size. It influences the energy difference between the QDash ground state of the system and the quantum well levels, which affects the tunneling rates. When that QW-QDash level separation decreases, the probability of capturing excitons generated in the QW by QDashes increases, which is reflected by the decreased diffusion length from approx. 5 down to 3 μm.

Engineering Nanowire n-MOSFETs at L_{g}<8 nm

NASA Astrophysics Data System (ADS)

Mehrotra, Saumitra R.; Kim, SungGeun; Kubis, Tillmann; Povolotskyi, Michael; Lundstrom, Mark S.; Klimeck, Gerhard

2013-07-01

As metal-oxide-semiconductor field-effect transistors (MOSFET) channel lengths (Lg) are scaled to lengths shorter than Lg<8 nm source-drain tunneling starts to become a major performance limiting factor. In this scenario a heavier transport mass can be used to limit source-drain (S-D) tunneling. Taking InAs and Si as examples, it is shown that different heavier transport masses can be engineered using strain and crystal orientation engineering. Full-band extended device atomistic quantum transport simulations are performed for nanowire MOSFETs at Lg<8 nm in both ballistic and incoherent scattering regimes. In conclusion, a heavier transport mass can indeed be advantageous in improving ON state currents in ultra scaled nanowire MOSFETs.

20 CFR 668.840 - What cost principles apply to INA funds?

Code of Federal Regulations, 2010 CFR

2010-04-01

... 20 Employees' Benefits 3 2010-04-01 2010-04-01 false What cost principles apply to INA funds? 668.840 Section 668.840 Employees' Benefits EMPLOYMENT AND TRAINING ADMINISTRATION, DEPARTMENT OF LABOR... Requirements § 668.840 What cost principles apply to INA funds? The cost principles described in OMB Circulars...

20 CFR 668.710 - What planning documents must an INA grantee submit?

Code of Federal Regulations, 2010 CFR

2010-04-01

... 20 Employees' Benefits 3 2010-04-01 2010-04-01 false What planning documents must an INA grantee... Planning/Funding Process § 668.710 What planning documents must an INA grantee submit? Each grantee... participant services and expenditures covering the two-year planning cycle. We will, in consultation with the...

20 CFR 668.650 - Can INA grantees exclude segments of the eligible population?

Code of Federal Regulations, 2010 CFR

2010-04-01

... eligible population? 668.650 Section 668.650 Employees' Benefits EMPLOYMENT AND TRAINING ADMINISTRATION... population? (a) No, INA grantees cannot exclude segments of the eligible population. INA grantees must document in their Two Year Plan that a system is in place to afford all members of the eligible population...

20 CFR 668.650 - Can INA grantees exclude segments of the eligible population?

Code of Federal Regulations, 2011 CFR

2011-04-01

... eligible population? 668.650 Section 668.650 Employees' Benefits EMPLOYMENT AND TRAINING ADMINISTRATION... population? (a) No, INA grantees cannot exclude segments of the eligible population. INA grantees must document in their Two Year Plan that a system is in place to afford all members of the eligible population...

20 CFR 668.700 - What process must an INA grantee use to plan its employment and training services?

Code of Federal Regulations, 2011 CFR

2011-04-01

... WORKFORCE INVESTMENT ACT Section 166 Planning/Funding Process § 668.700 What process must an INA grantee use to plan its employment and training services? (a) An INA grantee may utilize the planning procedures... development and administration of strategic community development efforts. ...

Complete inactivation of Venezuelan equine encephalitis virus by 1,5-iodonaphthylazide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, Anuj; Birla Institute of Technology and Science, Pilani; Raviv, Yossef

2007-06-29

Hydrophobic alkylating compounds like 1,5-iodonaphthylazide (INA) partitions into biological membranes and accumulates selectively into the hydrophobic domain of the lipid bilayer. Upon irradiation with far UV light, INA binds selectively to transmembrane proteins in the viral envelope and renders them inactive. Such inactivation does not alter the ectodomains of the membrane proteins thus preserving the structural and conformational integrity of immunogens on the surface of the virus. In this study, we have used INA to inactivate Venezuelan equine encephalitis virus (VEEV). Treatment of VEEV with INA followed by irradiation with UV light resulted in complete inactivation of the virus. Immuno-fluorescencemore » for VEEV and virus titration showed no virus replication in-vitro. Complete loss of infectivity was also achieved in mice infected with INA treated plus irradiated preparations of VEEV. No change in the structural integrity of VEEV particles were observed after treatment with INA plus irradiation as assessed by electron microscopy. This data suggest that such inactivation strategies can be used for developing vaccine candidates for VEEV and other enveloped viruses.« less

Synergetic Action of Domain II and IV Underlies Persistent Current Generation in Nav1.3 as revealed by a tarantula toxin

PubMed Central

Tang, Cheng; Zhou, Xi; Zhang, Yunxiao; xiao, Zhaohua; Hu, Zhaotun; Zhang, Changxin; Huang, Ying; Chen, Bo; Liu, Zhonghua; Liang, Songping

2015-01-01

The persistent current (INaP) through voltage-gated sodium channels enhances neuronal excitability by causing prolonged depolarization of membranes. Nav1.3 intrinsically generates a small INaP, although the mechanism underlying its generation remains unclear. In this study, the involvement of the four domains of Nav1.3 in INaP generation was investigated using the tarantula toxin α-hexatoxin-MrVII (RTX-VII). RTX-VII activated Nav1.3 and induced a large INaP. A pre-activated state binding model was proposed to explain the kinetics of toxin-channel interaction. Of the four domains of Nav1.3, both domain II and IV might play important roles in the toxin-induced INaP. Domain IV constructed the binding site for RTX-VII, while domain II might not participate in interacting with RTX-VII but could determine the efficacy of RTX-VII. Our results based on the use of RTX-VII as a probe suggest that domain II and IV cooperatively contribute to the generation of INaP in Nav1.3. PMID:25784299

Embedding beyond electrostatics-The role of wave function confinement.

PubMed

Nåbo, Lina J; Olsen, Jógvan Magnus Haugaard; Holmgaard List, Nanna; Solanko, Lukasz M; Wüstner, Daniel; Kongsted, Jacob

2016-09-14

We study excited states of cholesterol in solution and show that, in this specific case, solute wave-function confinement is the main effect of the solvent. This is rationalized on the basis of the polarizable density embedding scheme, which in addition to polarizable embedding includes non-electrostatic repulsion that effectively confines the solute wave function to its cavity. We illustrate how the inclusion of non-electrostatic repulsion results in a successful identification of the intense π → π(∗) transition, which was not possible using an embedding method that only includes electrostatics. This underlines the importance of non-electrostatic repulsion in quantum-mechanical embedding-based methods.

Defect reaction network in Si-doped InAs. Numerical predictions.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schultz, Peter A.

This Report characterizes the defects in the def ect reaction network in silicon - doped, n - type InAs predicted with first principles density functional theory. The reaction network is deduced by following exothermic defect reactions starting with the initially mobile interstitial defects reacting with common displacement damage defects in Si - doped InAs , until culminating in immobile reaction p roducts. The defect reactions and reaction energies are tabulated, along with the properties of all the silicon - related defects in the reaction network. This Report serves to extend the results for the properties of intrinsic defects in bulkmore » InAs as colla ted in SAND 2013 - 2477 : Simple intrinsic defects in InAs : Numerical predictions to include Si - containing simple defects likely to be present in a radiation - induced defect reaction sequence . This page intentionally left blank« less

Diamagnetic excitons and exciton magnetopolaritons in semiconductors

NASA Astrophysics Data System (ADS)

Seisyan, R. P.

2012-05-01

Interband magneto-absorption in semiconductors is reviewed in the light of the diamagnetic exciton (DE) concept. Beginning with a proof of the exciton nature of oscillating-magnetoabsorption (the DE discovery), development of the DE concept is discussed, including definition of observation conditions, quasi-cubic approximation for hexagonal crystals, quantum-well effects in artificial structures, and comprehension of an important role of the DE polariton. The successful use of the concept application to a broad range of substances is reviewed, namely quasi-Landau magnetic spectroscopy of the ‘Rydberg’ exciton states in cubic semiconductors such as InP and GaAs and in hexagonal ones such as CdSe, the proof of exciton participation in the formation of optical spectra in narrow-gap semiconductors such as InSb, InAs, and, especially, PbTe, observation of DE spectra in semiconductor solid solutions like InGaAs. The most fundamental findings of the DE spectroscopy for various quantum systems are brought together, including the ‘Coulomb-well’ effect, fine structure of discrete oscillatory states in the InGaAs/GaAs multiple quantum wells, the magneto-optical observation of above-barrier exciton. Prospects of the DE physics in ultrahigh magnetic field are discussed, including technological creation of controllable low-dimensional objects with extreme oscillator strengths, formation of magneto-quantum exciton polymer, and even modelling of the hydrogen behaviour in the atmosphere of a neutron star.

Inhibitions of late INa and CaMKII act synergistically to prevent ATX-II-induced atrial fibrillation in isolated rat right atria.

PubMed

Liang, Faquan; Fan, Peidong; Jia, Jessie; Yang, Suya; Jiang, Zhan; Karpinski, Serge; Kornyeyev, Dmytro; Pagratis, Nikos; Belardinelli, Luiz; Yao, Lina

2016-05-01

Increases in late Na(+) current (late INa) and activation of Ca(2+)/calmodulin-dependent protein kinase (CaMKII) are associated with atrial arrhythmias. CaMKII also phosphorylates Nav1.5, further increasing late INa. The combination of a CaMKII inhibitor with a late INa inhibitor may be superior to each compound alone to suppress atrial arrhythmias. Therefore, we investigated the effect of a CaMKII inhibitor in combination with a late INa inhibitor on anemone toxin II (ATX-II, a late INa enhancer)-induced atrial arrhythmias. Rat right atrial tissue was isolated and preincubated with either the CaMKII inhibitor autocamtide-2-related inhibitory peptide (AIP), the late INa inhibitor GS458967, or both, and then exposed to ATX-II. ATX-II increased diastolic tension and caused fibrillation of isolated right atrial tissue. AIP (0.3μmol/L) and 0.1μmol/L GS458967 alone inhibited ATX-II-induced arrhythmias by 20±3% (mean±SEM, n=14) and 34±5% (n=13), respectively, whereas the two compounds in combination inhibited arrhythmias by 81±4% (n=10, p<0.05, vs either AIP or GS458967 alone or the calculated sum of individual effects of both compounds). AIP and GS458967 also attenuated the ATX-induced increase of diastolic tension. Consistent with the mechanical and electrical data, 0.3μmol/L AIP and 0.1μmol/L GS458967 each inhibited ATX-II-induced CaMKII phosphorylation by 23±3% and 32±4%, whereas the combination of both compounds inhibited CaMKII phosphorylation completely. The effects of an enhanced late INa to induce arrhythmic activity and activation of CaMKII in atria are attenuated synergistically by inhibitors of late INa and CaMKII. Copyright © 2016 Elsevier Ltd. All rights reserved.

Entanglement measures in embedding quantum simulators with nuclear spins

NASA Astrophysics Data System (ADS)

Xin, Tao; Pedernales, Julen S.; Solano, Enrique; Long, Gui-Lu

2018-02-01

We implement an embedding quantum simulator (EQS) in nuclear spin systems. The experiment consists of a simulator of up to three qubits, plus a single ancillary qubit, where we are able to efficiently measure the concurrence and the three-tangle of two-qubit and three-qubit systems as they undergo entangling dynamics. The EQS framework allows us to drastically reduce the number of measurements needed for this task, which otherwise would require full-state reconstruction of the qubit system. Our simulator is built of the nuclear spins of four 13C atoms in a molecule of trans-crotonic acid manipulated with NMR techniques.

Enhanced emission of quantum dots embedded within the high-index dielectric regions of photonic crystal slabs

DOE Office of Scientific and Technical Information (OSTI.GOV)

See, Gloria G.; Naughton, Matt S.; Kenis, Paul J. A.

2016-04-25

We demonstrate a method for combining sputtered TiO{sub 2} deposition with liquid phase dip-coating of a quantum dot (QD) layer that enables precise depth placement of QD emitters within a high-index dielectric film, using a photonic crystal (PC) slab resonator to demonstrate enhanced emission from the QDs when they are located at a specific depth within the film. The depth of the QDs within the PC is found to modulate the resonant wavelength of the PC as well as the emission enhancement efficiency, as the semiconducting material embedded within the dielectric changes its spatial overlap with the resonant mode.

Polarization entangled photons from quantum dots embedded in nanowires.

PubMed

Huber, Tobias; Predojević, Ana; Khoshnegar, Milad; Dalacu, Dan; Poole, Philip J; Majedi, Hamed; Weihs, Gregor

2014-12-10

In this Letter, we present entanglement generated from a novel structure: a single InAsP quantum dot embedded in an InP nanowire. These structures can grow in a site-controlled way and exhibit high collection efficiency; we detect 0.5 million biexciton counts per second coupled into a single mode fiber with a standard commercial avalanche photo diode. If we correct for the known setup losses and detector efficiency, we get an extraction efficiency of 15(3) %. For the measured polarization entanglement, we observe a fidelity of 0.76(2) to a reference maximally entangled state as well as a concurrence of 0.57(6).

Promotion of couples' voluntary counselling and testing for HIV through influential networks in two African capital cities.

PubMed

Allen, Susan; Karita, Etienne; Chomba, Elwyn; Roth, David L; Telfair, Joseph; Zulu, Isaac; Clark, Leslie; Kancheya, Nzali; Conkling, Martha; Stephenson, Rob; Bekan, Brigitte; Kimbrell, Katherine; Dunham, Steven; Henderson, Faith; Sinkala, Moses; Carael, Michel; Haworth, Alan

2007-12-11

Most new HIV infections in Africa are acquired from cohabiting heterosexual partners. Couples' Voluntary Counselling and Testing (CVCT) is an effective prevention strategy for this group. We present our experience with a community-based program for the promotion of CVCT in Kigali, Rwanda and Lusaka, Zambia. Influence Network Agents (INAs) from the health, religious, non-governmental, and private sectors were trained to invite couples for CVCT. Predictors of successful promotion were identified using a multi-level hierarchical analysis. In 4 months, 9,900 invitations were distributed by 61 INAs, with 1,411 (14.3%) couples requesting CVCT. INAs in Rwanda distributed fewer invitations (2,680 vs. 7,220) and had higher response rates (26.9% vs. 9.6%), than INAs in Zambia. Context of the invitation event, including a discreet location such as the INA's home (OR 3.3-3.4), delivery of the invitation to both partners in the couple (OR 1.6-1.7) or to someone known to the INA (OR 1.7-1.8), and use of public endorsement (OR 1.7-1.8) were stronger predictors of success than INA or couple-level characteristics. Predictors of successful CVCT promotion included strategies that can be easily implemented in Africa. As new resources become available for Africans with HIV, CVCT should be broadly implemented as a point of entry for prevention, care and support.

Prognostic stratification of gliomatosis cerebri by IDH1 R132H and INA expression.

PubMed

Desestret, Virginie; Ciccarino, Pietro; Ducray, François; Crinière, Emmanuelle; Boisselier, Blandine; Labussière, Marianne; Polivka, Marc; Idbaih, Ahmed; Kaloshi, Gentian; von Deimling, Andreas; Hoang-Xuan, Khe; Delattre, Jean-Yves; Mokhtari, Karima; Sanson, Marc

2011-11-01

Gliomatosis cerebri (GC) constitutes a heterogeneous group of conditions involving diffuse neoplastic glial cell infiltration of the brain. Management is difficult and an obvious challenge is to identify prognostic factors. Alpha-internexin (INA) expression, which is closely related to the 1p19q codeletion, is a strong prognostic marker in oligodendroglial tumors. Similarly, the R132H isocitrate dehydrogenase 1 IDH1 mutation, which can now be detected by use of a specific antibody, predicts better outcome in gliomas. In a retrospective series of 40 GC treated with up-front chemotherapy, we analyzed IDH1(R132H) mutant protein and INA immunohistochemical expression and correlated it with outcome; 17/40 GC expressed IDH1(R132H) and 10/40 GC expressed INA. IDH1(R132H) staining was strongly related to progression-free survival (42.3 vs. 15.5 months for positive IDH1(R132H) vs. negative tumors; P < 0.0001) and overall survival (73.9 vs. 23.6 months; P < 0.0001). This effect was independent of grade, histologic subtype, and INA expression (P < 0.001). Combined expression of IDH1(R132H) and INA was strongly associated with response to chemotherapy (100% vs. 36%; P = 0.003). These data strongly suggest that INA and IDH1(R132H) mutant protein immunohistochemical analysis is of a great prognostic value in biopsied GC.

Quantum mechanical fragment methods based on partitioning atoms or partitioning coordinates.

PubMed

Wang, Bo; Yang, Ke R; Xu, Xuefei; Isegawa, Miho; Leverentz, Hannah R; Truhlar, Donald G

2014-09-16

Conspectus The development of more efficient and more accurate ways to represent reactive potential energy surfaces is a requirement for extending the simulation of large systems to more complex systems, longer-time dynamical processes, and more complete statistical mechanical sampling. One way to treat large systems is by direct dynamics fragment methods. Another way is by fitting system-specific analytic potential energy functions with methods adapted to large systems. Here we consider both approaches. First we consider three fragment methods that allow a given monomer to appear in more than one fragment. The first two approaches are the electrostatically embedded many-body (EE-MB) expansion and the electrostatically embedded many-body expansion of the correlation energy (EE-MB-CE), which we have shown to yield quite accurate results even when one restricts the calculations to include only electrostatically embedded dimers. The third fragment method is the electrostatically embedded molecular tailoring approach (EE-MTA), which is more flexible than EE-MB and EE-MB-CE. We show that electrostatic embedding greatly improves the accuracy of these approaches compared with the original unembedded approaches. Quantum mechanical fragment methods share with combined quantum mechanical/molecular mechanical (QM/MM) methods the need to treat a quantum mechanical fragment in the presence of the rest of the system, which is especially challenging for those parts of the rest of the system that are close to the boundary of the quantum mechanical fragment. This is a delicate matter even for fragments that are not covalently bonded to the rest of the system, but it becomes even more difficult when the boundary of the quantum mechanical fragment cuts a bond. We have developed a suite of methods for more realistically treating interactions across such boundaries. These methods include redistributing and balancing the external partial atomic charges and the use of tuned fluorine atoms for capping dangling bonds, and we have shown that they can greatly improve the accuracy. Finally we present a new approach that goes beyond QM/MM by combining the convenience of molecular mechanics with the accuracy of fitting a potential function to electronic structure calculations on a specific system. To make the latter practical for systems with a large number of degrees of freedom, we developed a method to interpolate between local internal-coordinate fits to the potential energy. A key issue for the application to large systems is that rather than assigning the atoms or monomers to fragments, we assign the internal coordinates to reaction, secondary, and tertiary sets. Thus, we make a partition in coordinate space rather than atom space. Fits to the local dependence of the potential energy on tertiary coordinates are arrayed along a preselected reaction coordinate at a sequence of geometries called anchor points; the potential energy function is called an anchor points reactive potential. Electrostatically embedded fragment methods and the anchor points reactive potential, because they are based on treating an entire system by quantum mechanical electronic structure methods but are affordable for large and complex systems, have the potential to open new areas for accurate simulations where combined QM/MM methods are inadequate.

Low-Loss Superconducting Nanowire Circuits Using a Neon Focused Ion Beam

NASA Astrophysics Data System (ADS)

Burnett, J.; Sagar, J.; Kennedy, O. W.; Warburton, P. A.; Fenton, J. C.

2017-07-01

We present low-temperature measurements of low-loss superconducting nanowire-embedded resonators in the low-power limit relevant for quantum circuits. The superconducting resonators are embedded with superconducting nanowires with widths down to 20 nm using a neon focused ion beam. In the low-power limit, we demonstrate an internal quality factor up to 3.9 ×105 at 300 mK [implying a two-level-system-limited quality factor up to 2 ×105 at 10 mK], not only significantly higher than in similar devices but also matching the state of the art of conventional Josephson-junction-embedded resonators. We also show a high sensitivity of the nanowire to stray infrared photons, which is controllable by suitable precautions to minimize stray photons in the sample environment. Our results suggest that there are excellent prospects for superconducting-nanowire-based quantum circuits.

Core-Shell Zn x Cd1- x Se/Zn y Cd1- y Se Quantum Dots for Nonvolatile Memory and Electroluminescent Device Applications

NASA Astrophysics Data System (ADS)

Al-Amoody, Fuad; Suarez, Ernesto; Rodriguez, Angel; Heller, E.; Huang, Wenli; Jain, F.

2011-08-01

This paper presents a floating quantum dot (QD) gate nonvolatile memory device using high-energy-gap Zn y Cd1- y Se-cladded Zn x Cd1- x Se quantum dots ( y > x) with tunneling layers comprising nearly lattice-matched semiconductors (e.g., ZnS/ZnMgS) on Si channels. Also presented is the fabrication of an electroluminescent (EL) device with embedded cladded ZnCdSe quantum dots. These ZnCdSe quantum dots were embedded between indium tin oxide (ITO) on glass and a top Schottky metal electrode deposited on a thin CsF barrier. These QDs, which were nucleated in a photo-assisted microwave plasma (PMP) metalorganic chemical vapor deposition (MOCVD) reactor, were grown between the source and drain regions on a p-type silicon substrate of the nonvolatile memory device. The composition of QD cladding, which relates to the value of y in Zn y Cd1- y Se, was engineered by the intensity of ultraviolet light, which controlled the incorporation of zinc in ZnCdSe. The QD quality is comparable to those deposited by other methods. Characteristics and modeling of the II-VI quantum dots as well as two diverse types of devices are presented in this paper.

Supersymmetry in the Jaynes-Cummings model

DOE Office of Scientific and Technical Information (OSTI.GOV)

Castanos, Octavio

2013-06-12

A review is presented of the Darboux method and its relation to the supersymmetric quantum mechanics, together with the embedding of a n-dimensional scalar Hamiltonian into a supersymmetric matrix. It is also shown that the Jaynes-Cummings model, with or without rotating wave approximation, admit a supersymmetric quantum mechanics description.

20 CFR 668.300 - Who is eligible to receive services under the INA program?

Code of Federal Regulations, 2014 CFR

2014-04-01

... 20 Employees' Benefits 4 2014-04-01 2014-04-01 false Who is eligible to receive services under the INA program? 668.300 Section 668.300 Employees' Benefits EMPLOYMENT AND TRAINING ADMINISTRATION... ACT Services to Customers § 668.300 Who is eligible to receive services under the INA program? (a) A...

20 CFR 668.300 - Who is eligible to receive services under the INA program?

Code of Federal Regulations, 2010 CFR

2010-04-01

... 20 Employees' Benefits 3 2010-04-01 2010-04-01 false Who is eligible to receive services under the INA program? 668.300 Section 668.300 Employees' Benefits EMPLOYMENT AND TRAINING ADMINISTRATION... Services to Customers § 668.300 Who is eligible to receive services under the INA program? (a) A person is...

22 CFR 40.205 - Applicant for immigrant visa under INA 203(c).

Code of Federal Regulations, 2013 CFR

2013-04-01

... 22 Foreign Relations 1 2013-04-01 2013-04-01 false Applicant for immigrant visa under INA 203(c). 40.205 Section 40.205 Foreign Relations DEPARTMENT OF STATE VISAS REGULATIONS PERTAINING TO BOTH... § 40.205 Applicant for immigrant visa under INA 203(c). An alien shall be ineligible to receive a visa...

22 CFR 40.205 - Applicant for immigrant visa under INA 203(c).

Code of Federal Regulations, 2014 CFR

2014-04-01

... 22 Foreign Relations 1 2014-04-01 2014-04-01 false Applicant for immigrant visa under INA 203(c). 40.205 Section 40.205 Foreign Relations DEPARTMENT OF STATE VISAS REGULATIONS PERTAINING TO BOTH... § 40.205 Applicant for immigrant visa under INA 203(c). An alien shall be ineligible to receive a visa...

22 CFR 40.205 - Applicant for immigrant visa under INA 203(c).

Code of Federal Regulations, 2011 CFR

2011-04-01

... 22 Foreign Relations 1 2011-04-01 2011-04-01 false Applicant for immigrant visa under INA 203(c). 40.205 Section 40.205 Foreign Relations DEPARTMENT OF STATE VISAS REGULATIONS PERTAINING TO BOTH... § 40.205 Applicant for immigrant visa under INA 203(c). An alien shall be ineligible to receive a visa...

22 CFR 40.205 - Applicant for immigrant visa under INA 203(c).

Code of Federal Regulations, 2012 CFR

2012-04-01

... 22 Foreign Relations 1 2012-04-01 2012-04-01 false Applicant for immigrant visa under INA 203(c). 40.205 Section 40.205 Foreign Relations DEPARTMENT OF STATE VISAS REGULATIONS PERTAINING TO BOTH... § 40.205 Applicant for immigrant visa under INA 203(c). An alien shall be ineligible to receive a visa...

Toward quantum plasmonic networks

DOE PAGES

Holtfrerich, M. W.; Dowran, M.; Davidson, R.; ...

2016-08-30

Here, we demonstrate the transduction of macroscopic quantum entanglement by independent, distant plasmonic structures embedded in separate thin silver films. In particular, we show that the plasmon-mediated transmission through each film conserves spatially dependent, entangled quantum images, opening the door for the implementation of parallel quantum protocols, super-resolution imaging, and quantum plasmonic sensing geometries at the nanoscale level. The conservation of quantum information by the transduction process shows that continuous variable multi-mode entanglement is momentarily transferred from entangled beams of light to the space-like separated, completely independent plasmonic structures, thus providing a first important step toward establishing a multichannel quantummore » network across separate solid-state substrates.« less

Growth of group II-VI semiconductor quantum dots with strong quantum confinement and low size dispersion

NASA Astrophysics Data System (ADS)

Pandey, Praveen K.; Sharma, Kriti; Nagpal, Swati; Bhatnagar, P. K.; Mathur, P. C.

2003-11-01

CdTe quantum dots embedded in glass matrix are grown using two-step annealing method. The results for the optical transmission characterization are analysed and compared with the results obtained from CdTe quantum dots grown using conventional single-step annealing method. A theoretical model for the absorption spectra is used to quantitatively estimate the size dispersion in the two cases. In the present work, it is established that the quantum dots grown using two-step annealing method have stronger quantum confinement, reduced size dispersion and higher volume ratio as compared to the single-step annealed samples. (

Direct Quantification of Ice Nucleation Active Bacteria in Aerosols and Precipitation: Their Potential Contribution as Ice Nuclei

NASA Astrophysics Data System (ADS)

Hill, T. C.; DeMott, P. J.; Garcia, E.; Moffett, B. F.; Prenni, A. J.; Kreidenweis, S. M.; Franc, G. D.

2013-12-01

Ice nucleation active (INA) bacteria are a potentially prodigious source of highly active (≥-12°C) atmospheric ice nuclei, especially from agricultural land. However, we know little about the conditions that promote their release (eg, daily or seasonal cycles, precipitation, harvesting or post-harvest decay of litter) or their typical contribution to the pool of boundary layer ice nucleating particles (INP). To initiate these investigations we developed a quantitative Polymerase Chain Reaction (qPCR) test of the ina gene, the gene that codes for the ice nucleating protein, to directly count INA bacteria in environmental samples. The qPCR test amplifies most forms of the gene and is highly sensitive, able to detect perhaps a single gene copy (ie, a single bacterium) in DNA extracted from precipitation. Direct measurement of the INA bacteria is essential because environmental populations will be a mixture of living, viable-but-not culturable, moribund and dead cells, all of which may retain ice nucleating proteins. Using the qPCR test on leaf washings of plants from three farms in Wyoming, Colorado and Nebraska we found INA bacteria to be abundant on crops, especially on cereals. Mid-summer populations on wheat and barley were ~108/g fresh weigh of foliage. Broadleaf crops, such as corn, alfalfa, sugar beet and potato supported 105-107/g. Unexpectedly, however, in the absence of a significant physical disturbance, such as harvesting, we were unable to detect the ina gene in aerosols sampled above the crops. Likewise, in fresh snow samples taken over two winters, ina genes from a range of INA bacteria were detected in about half the samples but at abundances that equated to INA bacterial numbers that accounted for only a minor proportion of INP active at -10°C. By contrast, in a hail sample from a summer thunderstorm we found 0.3 INA bacteria per INP at -10°C and ~0.5 per hail stone. Although the role of the INA bacteria as warm-temperature INP in these samples appeared to be minor, or sample dependent, we found that a biological component (inferred from its sensitivity to heat) predominated in essentially all samples. At -10°C, around 85-95% of INP in aerosols and an average of ~85% of INP in snow and hail were organic. This source, or sources, of biological ice nuclei are the focus of current research.

Voltage-Gated Na+ Channels are Modulated by Glucose and Involved in Regulating Cellular Insulin Content of INS-1 Cells.

PubMed

Chen, Chong; Wang, Songhua; Hu, Qingjuan; Zeng, Lvming; Peng, Hailong; Liu, Chao; Huang, Li-Ping; Song, Hao; Li, Yuping; Yao, Li-Hua; Meng, Wei

2018-01-01

Islet beta cells (β-cells) are unique cells that play a critical role in glucose homeostasis by secreting insulin in response to increased glucose levels. Voltage-gated ion channels in β-cells, such as K+ and Ca2+ channels, contribute to insulin secretion. The response of voltage-gated Na+ channels (VGSCs) in β-cells to the changes in glucose levels remains unknown. This work aims to determine the role of extracellular glucose on the regulation of VGSC. The effect of glucose on VGSC currents (INa) was investigated in insulin-secreting β-cell line (INS-1) cells of rats using whole-cell patch clamp techniques, and the effects of glucose on insulin content and cell viability were determined using Enzyme-Linked Immunosorbent Assay (ELISA) and Methylthiazolyldiphenyl-tetrazolium Bromide (MTT) assay methods respectively. Our results show that extracellular glucose application can inhibit the peak of INa in a concentration-dependent manner. Glucose concentration of 18 mM reduced the amplitude of INa, suppressed the INa of steady-state activation, shifted the steady-state inactivation curves of INa to negative potentials, and prolonged the time course of INa recovery from inactivation. Glucose also enhanced the activity-dependent attenuation of INa and reduced the fraction of activated channels. Furthermore, 18 mM glucose or low concentration of tetrodotoxin (TTX, a VGSC-specific blocker) partially inhibited the activity of VGSC and also improved insulin synthesis. These results revealed that extracellular glucose application enhances the insulin synthesis in INS-1 cells and the mechanism through the partial inhibition on INa channel is involved. Our results innovatively suggest that VGSC plays a vital role in modulating glucose homeostasis. © 2018 The Author(s). Published by S. Karger AG, Basel.

Recent progress in high gain InAs avalanche photodiodes (Presentation Recording)

NASA Astrophysics Data System (ADS)

Bank, Seth; Maddox, Scott J.; Sun, Wenlu; Nair, Hari P.; Campbell, Joe C.

2015-08-01

InAs possesses nearly ideal material properties for the fabrication of near- and mid-infrared avalanche photodiodes (APDs), which result in strong electron-initiated impact ionization and negligible hole-initiated impact ionization [1]. Consequently, InAs multiplication regions exhibit several appealing characteristics, including extremely low excess noise factors and bandwidth independent of gain [2], [3]. These properties make InAs APDs attractive for a number of near- and mid-infrared sensing applications including remote gas sensing, light detection and ranging (LIDAR), and both active and passive imaging. Here, we discuss our recent advances in the growth and fabrication of high gain, low noise InAs APDs. Devices yielded room temperature multiplication gains >300, with much reduced (~10x) lower dark current densities. We will also discuss a likely key contributor to our current performance limitations: silicon diffusion into the intrinsic (multiplication) region from the underlying n-type layer during growth. Future work will focus on increasing the intrinsic region thickness, targeting gains >1000. This work was supported by the Army Research Office (W911NF-10-1-0391). [1] A. R. J. Marshall, C. H. Tan, M. J. Steer, and J. P. R. David, "Electron dominated impact ionization and avalanche gain characteristics in InAs photodiodes," Applied Physics Letters, vol. 93, p. 111107, 2008. [2] A. R. J. Marshall, A. Krysa, S. Zhang, A. S. Idris, S. Xie, J. P. R. David, and C. H. Tan, "High gain InAs avalanche photodiodes," in 6th EMRS DTC Technical Conference, Edinburgh, Scotland, UK, 2009. [3] S. J. Maddox, W. Sun, Z. Lu, H. P. Nair, J. C. Campbell, and S. R. Bank, "Enhanced low-noise gain from InAs avalanche photodiodes with reduced dark current and background doping," Applied Physics Letters, vol. 101, no. 15, pp. 151124-151124-3, Oct. 2012.

Nocardia globerula NHB-2 nitrilase catalysed biotransformation of 4-cyanopyridine to isonicotinic acid

PubMed Central

2012-01-01

Isonicotinic acid (INA) is an important pyridine derivative used in the manufacture of isoniazid (antituberculosatic drug) and other pharmaceutically important drugs. Nitrilase catalysed processes for the synthesis of pharmaceutically important acids from their corresponding nitriles are promising alternative over the cumbersome, hazardous, and energy demanding chemical processes. Nitrilase of Nocardia globerula NHB-2 (NitNHB2) is expressed in presence of isobutyronitrile in the growth medium (1.0% glucose, 0.5% peptone, 0.3% beef extract, and 0.1 % yeast extract, pH 7.5). NitNHB2 hydrolyses 4-cyanopyridine (4-CP) to INA without accumulation of isonicotinamide, which is common in the reaction catalysed via fungal nitrilases. The NitNHB2 suffers from substrate inhibition effect and hydrolysing activity up to 250 mM 4-CP was recorded. Complete conversion of 200 mM 4-CP to INA was achieved in 40 min using resting cell concentration corresponding to 10 U mL-1 nitrilase activity in the reaction. Substrate inhibition effect in the fed batch reaction (200 mM substrate feed/40min) led to formation of only 729 mM INA. In a fed batch reaction (100 mM 4-CP/20min), substrate inhibition effect was encountered after 7th feed and a total of 958 mM INA was produced in 400 min. The fed batch reaction scaled up to 1 L and 100% hydrolysis of 700 mM of 4-CP to INA at 35°C achieved in 140 min. The rate of INA production was 21.1 g h-1 mgDCW-1. This is the fastest biotransformation process ever reported for INA production with time and space productivity of 36 g L-1 h-1 using a bacterial nitrilase. PMID:22537922

Molecular and functional differences in voltage-activated sodium currents between GABA projection neurons and dopamine neurons in the substantia nigra

PubMed Central

Ding, Shengyuan; Wei, Wei

2011-01-01

GABA projection neurons (GABA neurons) in the substantia nigra pars reticulata (SNr) and dopamine projection neurons (DA neurons) in substantia nigra pars compacta (SNc) have strikingly different firing properties. SNc DA neurons fire low-frequency, long-duration spikes, whereas SNr GABA neurons fire high-frequency, short-duration spikes. Since voltage-activated sodium (NaV) channels are critical to spike generation, the different firing properties raise the possibility that, compared with DA neurons, NaV channels in SNr GABA neurons have higher density, faster kinetics, and less cumulative inactivation. Our quantitative RT-PCR analysis on immunohistochemically identified nigral neurons indicated that mRNAs for pore-forming NaV1.1 and NaV1.6 subunits and regulatory NaVβ1 and Navβ4 subunits are more abundant in SNr GABA neurons than SNc DA neurons. These α-subunits and β-subunits are key subunits for forming NaV channels conducting the transient NaV current (INaT), persistent Na current (INaP), and resurgent Na current (INaR). Nucleated patch-clamp recordings showed that INaT had a higher density, a steeper voltage-dependent activation, and a faster deactivation in SNr GABA neurons than in SNc DA neurons. INaT also recovered more quickly from inactivation and had less cumulative inactivation in SNr GABA neurons than in SNc DA neurons. Furthermore, compared with nigral DA neurons, SNr GABA neurons had a larger INaR and INaP. Blockade of INaP induced a larger hyperpolarization in SNr GABA neurons than in SNc DA neurons. Taken together, these results indicate that NaV channels expressed in fast-spiking SNr GABA neurons and slow-spiking SNc DA neurons are tailored to support their different spiking capabilities. PMID:21880943

Larger late sodium current density as well as greater sensitivities to ATX II and ranolazine in rabbit left atrial than left ventricular myocytes.

PubMed

Luo, Antao; Ma, Jihua; Song, Yejia; Qian, Chunping; Wu, Ying; Zhang, Peihua; Wang, Leilei; Fu, Chen; Cao, Zhenzhen; Shryock, John C

2014-02-01

An increase of cardiac late sodium current (INa.L) is arrhythmogenic in atrial and ventricular tissues, but the densities of INa.L and thus the potential relative contributions of this current to sodium ion (Na(+)) influx and arrhythmogenesis in atria and ventricles are unclear. In this study, whole-cell and cell-attached patch-clamp techniques were used to measure INa.L in rabbit left atrial and ventricular myocytes under identical conditions. The density of INa.L was 67% greater in left atrial (0.50 ± 0.09 pA/pF, n = 20) than in left ventricular cells (0.30 ± 0.07 pA/pF, n = 27, P < 0.01) when elicited by step pulses from -120 to -20 mV at a rate of 0.2 Hz. Similar results were obtained using step pulses from -90 to -20 mV. Anemone toxin II (ATX II) increased INa.L with an EC50 value of 14 ± 2 nM and a Hill slope of 1.4 ± 0.1 (n = 9) in atrial myocytes and with an EC50 of 21 ± 5 nM and a Hill slope of 1.2 ± 0.1 (n = 12) in ventricular myocytes. Na(+) channel open probability (but not mean open time) was greater in atrial than in ventricular cells in the absence and presence of ATX II. The INa.L inhibitor ranolazine (3, 6, and 9 μM) reduced INa.L more in atrial than ventricular myocytes in the presence of 40 nM ATX II. In summary, rabbit left atrial myocytes have a greater density of INa.L and higher sensitivities to ATX II and ranolazine than rabbit left ventricular myocytes.

[New antibiotics produced by Bacillus subtilis strains].

PubMed

Malanicheva, I A; Kozlov, D G; Efimenko, T A; Zenkova, V A; Kastrukha, G S; Reznikova, M I; Korolev, A M; Borshchevskaia, L N; Tarasova, O D; Sineokiĭ, S P; Efremenkova, O V

2014-01-01

Two Bacillus subtilis strains isolated from the fruiting body of a basidiomycete fungus Pholiota squarrosa exhibited a broad range of antibacterial activity, including those against methicillin-resistant Staphylococcus aureus INA 00761 (MRSA) and Leuconostoc mes6nteroides VKPM B-4177 resistant to glycopep-> tide antibiotics, as well as antifungal activity. The strains were identified as belonging to the "B. subtilis" com- plex based on their morphological and physiological characteristics, as well as by sequencing of the 16S rRNA gene fragments. Both strains (INA 01085 and INA 01086) produced insignificant amounts of polyene antibiotics (hexaen and pentaen, respectively). Strain INA 01086 produced also a cyclic polypeptide antibiotic containing Asp, Gly, Leu, Pro, Tyr, Thr, Trp, and Phe, while the antibiotic of strain INA 01085 contained, apart from these, two unidentified nonproteinaceous amino acids. Both polypeptide antibiotics were new compounds efficient against gram-positive bacteria and able to override the natural bacterial antibiotic resistance.

Growth of heterostructures on InAs for high mobility device applications

NASA Astrophysics Data System (ADS)

Contreras-Guerrero, R.; Wang, S.; Edirisooriya, M.; Priyantha, W.; Rojas-Ramirez, J. S.; Bhuwalka, K.; Doornbos, G.; Holland, M.; Oxland, R.; Vellianitis, G.; Van Dal, M.; Duriez, B.; Passlack, M.; Diaz, C. H.; Droopad, R.

2013-09-01

The growth of heterostructures lattice matched to InAs(100) substrates for high mobility electronic devices has been investigated. The oxide removal process and homoepitaxial nucleation depends on the deposition parameters to avoid the formation of surface defects that can propagate through the structure during growth which can result in degraded device performance. The growth parameters for InAs homoepitaxy were found to be within an extremely narrow range when using As4 with a slight increase using As2. High structural quality lattice matched AlAsxSb1-x buffer layer was grown on InAs(100) substrates using a digital growth technique with the AlAs mole fraction adjusted by varying the incident As flux. Using the AlAsxSb1-x buffer layer, the transport properties of thin InAs channel layers were determined on conducting native substrates.

Approximation method for a spherical bound system in the quantum plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mehramiz, A.; Sobhanian, S.; Mahmoodi, J.

2010-08-15

A system of quantum hydrodynamic equations has been used for investigating the dielectric tensor and dispersion equation of a semiconductor as a quantum magnetized plasma. Dispersion relations and their modifications due to quantum effects are derived for both longitudinal and transverse waves. The number of states and energy levels are analytically estimated for a spherical bound system embedded in a semiconductor quantum plasma. The results show that longitudinal waves decay rapidly and do not interact with the spherical bound system. The energy shifts caused by the spin-orbit interaction and the Zeeman effect are calculated.

Minimization of material inter-diffusion for thermally stable quaternary-capped InAs quantum dot via strain modification

NASA Astrophysics Data System (ADS)

Ghadi, Hemant; Sehara, Navneet; Murkute, Punam; Chakrabarti, Subhananda

2017-05-01

In this study, a theoretical model is developed for investigating the effect of thermal annealing on a single-layer quaternary-capped (In0.21Al0.21Ga0.58As) InAs quantum dot heterostructure (sample A) and compared to a conventional GaAs-capped sample (sample B). Strain, an interfacial property, aids in dot formation; however, it hinders interdiffusion (up to 650 °C), rendering thermal stability to heterostructures. Three diffusing species In/Al/Ga intermix because of the concentration gradient and temperature variation, which is modeled by Fick's law of diffusion. Ground-state energy for both carriers (electron and holes) is calculated by the Schrodinger equation at different annealing temperatures, incorporating strain computed by the concentration-dependent model. Change in activation energy due to strain decreases particle movement, thereby resulting in thermally stable structures at low annealing temperatures. At low temperature, the conduction band near the dot edge slightly decreases, attributed to the comparatively high strain. Calculated results are consistent with the experimental blue-shift i.e. towards lower wavelength of photoluminescence peak on the same sample with increasing annealing temperatures. Cross-sectional transmission microscopy (TEM) images substantiate the existence of dot till 800 °C for sample (A). With increasing annealing temperature, interdiffusion and dot sublimation are observed in XTEM images of samples A and B. Strain calculated from high-resolution X-ray diffraction (HRXRD) peaks and its decline with increasing temperature are in agreement with that calculated by the model. For highlighting the benefits of quaternary capping, InAlGaAs capping is theoretically and experimentally compared to GaAs capping. Concentration-dependent strain energy is calculated at every point and is further used for computing material interdiffusion, band profiles, and photoluminescence peak wavelength, which can provide better insights into strain energy behavior with temperature and help in the better understanding of thermal annealing.

High-speed and high-efficiency travelling wave single-photon detectors embedded in nanophotonic circuits

PubMed Central

Pernice, W.H.P.; Schuck, C.; Minaeva, O.; Li, M.; Goltsman, G.N.; Sergienko, A.V.; Tang, H.X.

2012-01-01

Ultrafast, high-efficiency single-photon detectors are among the most sought-after elements in modern quantum optics and quantum communication. However, imperfect modal matching and finite photon absorption rates have usually limited their maximum attainable detection efficiency. Here we demonstrate superconducting nanowire detectors atop nanophotonic waveguides, which enable a drastic increase of the absorption length for incoming photons. This allows us to achieve high on-chip single-photon detection efficiency up to 91% at telecom wavelengths, repeatable across several fabricated chips. We also observe remarkably low dark count rates without significant compromise of the on-chip detection efficiency. The detectors are fully embedded in scalable silicon photonic circuits and provide ultrashort timing jitter of 18 ps. Exploiting this high temporal resolution, we demonstrate ballistic photon transport in silicon ring resonators. Our direct implementation of a high-performance single-photon detector on chip overcomes a major barrier in integrated quantum photonics. PMID:23271658

Charging/discharging behavior and mechanism of silicon quantum dots embedded in amorphous silicon carbide films

NASA Astrophysics Data System (ADS)

Wen, Xixing; Zeng, Xiangbin; Zheng, Wenjun; Liao, Wugang; Feng, Feng

2015-01-01

The charging/discharging behavior of Si quantum dots (QDs) embedded in amorphous silicon carbide (a-SiCx) was investigated based on the Al/insulating layer/Si QDs embedded in a-SiCx/SiO2/p-Si (metal-insulator-quantum dots-oxide-silicon) multilayer structure by capacitance-voltage (C-V) and conductance-voltage (G-V) measurements. Transmission electron microscopy and Raman scattering spectroscopy measurements reveal the microstructure and distribution of Si QDs. The occurrence and shift of conductance peaks indicate the carrier transfer and the charging/discharging behavior of Si QDs. The multilayer structure shows a large memory window of 5.2 eV at ±8 V sweeping voltage. Analysis of the C-V and G-V results allows a quantification of the Coulomb charging energy and the trapped charge density associated with the charging/discharging behavior. It is found that the memory window is related to the size effect, and Si QDs with large size or low Coulomb charging energy can trap two or more electrons by changing the charging voltage. Meanwhile, the estimated lower potential barrier height between Si QD and a-SiCx, and the lower Coulomb charging energy of Si QDs could enhance the charging and discharging effect of Si QDs and lead to an enlarged memory window. Further studies of the charging/discharging mechanism of Si QDs embedded in a-SiCx can promote the application of Si QDs in low-power consumption semiconductor memory devices.

20 CFR 668.750 - Under what circumstances can we or the INA grantee modify the terms of the grantee's plan(s)?

Code of Federal Regulations, 2012 CFR

2012-04-01

... modify the INA grantee's plan to add funds or, if required by Congressional action, to reduce the amount... add, expand, delete, or diminish any service allowable under the regulations in this part. The INA... event that further clarification or modification is required, we may extend the thirty (30) day time...

20 CFR 668.750 - Under what circumstances can we or the INA grantee modify the terms of the grantee's plan(s)?

Code of Federal Regulations, 2014 CFR

2014-04-01

... modify the INA grantee's plan to add funds or, if required by Congressional action, to reduce the amount... add, expand, delete, or diminish any service allowable under the regulations in this part. The INA... event that further clarification or modification is required, we may extend the thirty (30) day time...

20 CFR 668.750 - Under what circumstances can we or the INA grantee modify the terms of the grantee's plan(s)?

Code of Federal Regulations, 2013 CFR

2013-04-01

... modify the INA grantee's plan to add funds or, if required by Congressional action, to reduce the amount... add, expand, delete, or diminish any service allowable under the regulations in this part. The INA... event that further clarification or modification is required, we may extend the thirty (30) day time...

20 CFR 668.510 - What services may INA grantees provide to the community at large under section 166?

Code of Federal Regulations, 2014 CFR

2014-04-01

... 20 Employees' Benefits 4 2014-04-01 2014-04-01 false What services may INA grantees provide to the community at large under section 166? 668.510 Section 668.510 Employees' Benefits EMPLOYMENT AND TRAINING... WORKFORCE INVESTMENT ACT Services to Communities § 668.510 What services may INA grantees provide to the...

20 CFR 668.510 - What services may INA grantees provide to the community at large under section 166?

Code of Federal Regulations, 2010 CFR

2010-04-01

... 20 Employees' Benefits 3 2010-04-01 2010-04-01 false What services may INA grantees provide to the community at large under section 166? 668.510 Section 668.510 Employees' Benefits EMPLOYMENT AND TRAINING... ACT Services to Communities § 668.510 What services may INA grantees provide to the community at large...

77 FR 61815 - 30-Day Notice of Proposed Information Collection: Petition To Classify Special Immigrant as an...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-10-11

...: Petition To Classify Special Immigrant as an Employee or Former Employee of the U.S. Government Abroad... INFORMATION: Title of Information Collection: Petition to Classify Special Immigrant Under INA 203(b)(4) as an...: Aliens petitioning for immigrant visas under INA 203(b)(4) as a special immigrant described in INA...

77 FR 28922 - 60-Day Notice of Proposed Information Collection: DS-1884, Petition To Classify Special Immigrant...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-05-16

..., Petition To Classify Special Immigrant Under INA 203(b)(4) as an Employee or Former Employee of the U.S... of 1995. Title of Information Collection: Petition to Classify Special Immigrant Under INA 203(b)(4...: DS-1884. Respondents: Aliens petitioning for immigrant visas under INA 203(b)(4). Estimated Number of...

20 CFR 668.100 - What is the purpose of the programs established to serve Native American peoples (INA programs...

Code of Federal Regulations, 2011 CFR

2011-04-01

... established to serve Native American peoples (INA programs) under section 166 of the Workforce Investment Act... Policies § 668.100 What is the purpose of the programs established to serve Native American peoples (INA... training services to Native American peoples and their communities. Services should be provided in a...

Resonant Scattering of Surface Plasmon Polaritons by Dressed Quantum Dots

DTIC Science & Technology

2014-06-23

Resonant scattering of surface plasmon polaritons by dressed quantum dots Danhong Huang,1 Michelle Easter,2 Godfrey Gumbs,3 A. A. Maradudin,4 Shawn... polariton waves (SPP) by embedded semiconductor quantum dots above the dielectric/metal interface is explored in the strong-coupling regime. In con- trast to...induced polarization field, treated as a source term9 arising from photo-excited electrons, allows for a resonant scattering of surface plasmon- polariton

Promotion of couples' voluntary counselling and testing for HIV through influential networks in two African capital cities

PubMed Central

Allen, Susan; Karita, Etienne; Chomba, Elwyn; Roth, David L; Telfair, Joseph; Zulu, Isaac; Clark, Leslie; Kancheya, Nzali; Conkling, Martha; Stephenson, Rob; Bekan, Brigitte; Kimbrell, Katherine; Dunham, Steven; Henderson, Faith; Sinkala, Moses; Carael, Michel; Haworth, Alan

2007-01-01

Background Most new HIV infections in Africa are acquired from cohabiting heterosexual partners. Couples' Voluntary Counselling and Testing (CVCT) is an effective prevention strategy for this group. We present our experience with a community-based program for the promotion of CVCT in Kigali, Rwanda and Lusaka, Zambia. Methods Influence Network Agents (INAs) from the health, religious, non-governmental, and private sectors were trained to invite couples for CVCT. Predictors of successful promotion were identified using a multi-level hierarchical analysis. Results In 4 months, 9,900 invitations were distributed by 61 INAs, with 1,411 (14.3%) couples requesting CVCT. INAs in Rwanda distributed fewer invitations (2,680 vs. 7,220) and had higher response rates (26.9% vs. 9.6%), than INAs in Zambia. Context of the invitation event, including a discreet location such as the INA's home (OR 3.3–3.4), delivery of the invitation to both partners in the couple (OR 1.6–1.7) or to someone known to the INA (OR 1.7–1.8), and use of public endorsement (OR 1.7–1.8) were stronger predictors of success than INA or couple-level characteristics. Conclusion Predictors of successful CVCT promotion included strategies that can be easily implemented in Africa. As new resources become available for Africans with HIV, CVCT should be broadly implemented as a point of entry for prevention, care and support. PMID:18072974

Nanodiamonds with photostable, sub-gigahertz linewidth quantum emitters

NASA Astrophysics Data System (ADS)

Tran, Toan Trong; Kianinia, Mehran; Bray, Kerem; Kim, Sejeong; Xu, Zai-Quan; Gentle, Angus; Sontheimer, Bernd; Bradac, Carlo; Aharonovich, Igor

2017-11-01

Single-photon emitters with narrow linewidths are highly sought after for applications in quantum information processing and quantum communications. In this letter, we report on a bright, highly polarized near infrared single photon emitter embedded in diamond nanocrystals with a narrow, sub-GHz optical linewidth at 10 K. The observed zero-phonon line at ˜780 nm is optically stable under low power excitation and blue shifts as the excitation power increases. Our results highlight the prospect for using new near infrared color centers in nanodiamonds for quantum applications.

Anticipatory dynamics of biological systems: from molecular quantum states to evolution

NASA Astrophysics Data System (ADS)

Igamberdiev, Abir U.

2015-08-01

Living systems possess anticipatory behaviour that is based on the flexibility of internal models generated by the system's embedded description. The idea was suggested by Aristotle and is explicitly introduced to theoretical biology by Rosen. The possibility of holding the embedded internal model is grounded in the principle of stable non-equilibrium (Bauer). From the quantum mechanical view, this principle aims to minimize energy dissipation in expense of long relaxation times. The ideas of stable non-equilibrium were developed by Liberman who viewed living systems as subdivided into the quantum regulator and the molecular computer supporting coherence of the regulator's internal quantum state. The computational power of the cell molecular computer is based on the possibility of molecular rearrangements according to molecular addresses. In evolution, the anticipatory strategies are realized both as a precession of phylogenesis by ontogenesis (Berg) and as the anticipatory search of genetic fixation of adaptive changes that incorporates them into the internal model of genetic system. We discuss how the fundamental ideas of anticipation can be introduced into the basic foundations of theoretical biology.

Electronic structure calculation of single and coupled self-assembled quantum dots

NASA Astrophysics Data System (ADS)

Mlinar, Vladan

There are two main contributions of this thesis. First, from the theoretical point of view, we find that different treatments of the nanostructure-barrier interface in the framework of multiband effective-mass theory, result in the existence of non-physical solutions for the hole energy levels of a nanostructure. Our proposed improvement is an approach based on the envelope-function theory for nanostructures developed by Burt and Foreman. In structures with a large difference of the structural parameters between the constituent materials, such as InAs/GaAs quantum nanostructures, the conventional multiband models lead to non-physical solutions. Second, we investigate underlying physics of the theoretically less investigated QD systems. Variation of electronic and optical properties of InAs/GaAs QDs and QDM grown on [11k] substrates, where k=1,2,3 were analyzed and we found that: (i) The QD size in the growth direction determines the degree of influence of the substrate orientation: the flatter the dots, the larger the difference from the reference [001] case. (ii) The small variation of inter-dot distance in eight QD molecule qualitatively changes the transition energy dependence on the substrate orientation. (iii) Size of the QD in the growth direction determines the influence of the (In,Ga)As capping layer on the optical properties of [11k] grown InAs QDs, where k=1,2,3. Next, two cases of type II QDs where hole is localized outside the dot, were discussed: InP/InGaP QDs and QDMs in an external magnetic field, and InAs QDs capped with Ga(As,Sb). Competition between confinement, quantum mechanical coupling, and strain influence the exciton diamagnetic shift in single QD and double and triple QDM is investigated in details. Available experimental data were successfully described by one of the optically active exciton states of the lowest lying exciton quartet. Finally, the electronic and optical properties of unstrained GaAs self-assembled QDs with precisely known sizes and shape, placed in an external magnetic field are investigated. For magnetic fields applied both, in growth direction and perpendicular to it (B≤50T), we found good agreement between our predicted exciton diamagnetic shift and recent experimental magneto-photoluminescence data.

Dynamics of photogenerated carriers near magnetic field driven quantum phase transition in aperiodic multiple quantum wells

NASA Astrophysics Data System (ADS)

Tito, M. A.; Pusep, Yu A.

2018-01-01

Time-resolved magneto-photoluminescence was employed to study the magnetic field induced quantum phase transition separating two phases with different distributions of electrons over quantum wells in an aperiodic multiple quantum well, embedded in a wide AlGaAs parabolic quantum well. Intensities, broadenings and recombination times attributed to the photoluminescence lines emitted from individual quantum wells of the multiple quantum well structure were measured as a function of the magnetic field near the transition. The presented data manifest themselves to the magnetic field driven migration of the free electrons between the quantum wells of the studied multiple quantum well structure. The observed charge transfer was found to influence the screening of the multiple quantum well and disorder potentials. Evidence of the localization of the electrons in the peripheral quantum wells in strong magnetic field is presented.

20 CFR 668.750 - Under what circumstances can we or the INA grantee modify the terms of the grantee's plan(s)?

Code of Federal Regulations, 2010 CFR

2010-04-01

... the INA grantee's plan to add funds or, if required by Congressional action, to reduce the amount of funds available for expenditure. (b) The INA grantee may request approval to modify its plan to add... event that further clarification or modification is required, we may extend the thirty (30) day time...

20 CFR 668.750 - Under what circumstances can we or the INA grantee modify the terms of the grantee's plan(s)?

Code of Federal Regulations, 2011 CFR

2011-04-01

... the INA grantee's plan to add funds or, if required by Congressional action, to reduce the amount of funds available for expenditure. (b) The INA grantee may request approval to modify its plan to add... event that further clarification or modification is required, we may extend the thirty (30) day time...

20 CFR 668.870 - What is “program income” and how is it regulated in the INA program?

Code of Federal Regulations, 2010 CFR

2010-04-01

... 20 Employees' Benefits 3 2010-04-01 2010-04-01 false What is âprogram incomeâ and how is it regulated in the INA program? 668.870 Section 668.870 Employees' Benefits EMPLOYMENT AND TRAINING... ACT Administrative Requirements § 668.870 What is “program income” and how is it regulated in the INA...

20 CFR 668.380 - What will we do to strengthen the capacity of INA grantees to deliver effective services?

Code of Federal Regulations, 2010 CFR

2010-04-01

... 20 Employees' Benefits 3 2010-04-01 2010-04-01 false What will we do to strengthen the capacity of INA grantees to deliver effective services? 668.380 Section 668.380 Employees' Benefits EMPLOYMENT AND... WORKFORCE INVESTMENT ACT Services to Customers § 668.380 What will we do to strengthen the capacity of INA...

20 CFR 668.380 - What will we do to strengthen the capacity of INA grantees to deliver effective services?

Code of Federal Regulations, 2011 CFR

2011-04-01

... 20 Employees' Benefits 3 2011-04-01 2011-04-01 false What will we do to strengthen the capacity of INA grantees to deliver effective services? 668.380 Section 668.380 Employees' Benefits EMPLOYMENT AND... WORKFORCE INVESTMENT ACT Services to Customers § 668.380 What will we do to strengthen the capacity of INA...

Inter-band optoelectronic properties in quantum dot structure of low band gap III-V semiconductors

NASA Astrophysics Data System (ADS)

Dey, Anup; Maiti, Biswajit; Chanda Sarkar, Debasree

2014-04-01

A generalized theory is developed to study inter-band optical absorption coefficient (IOAC) and material gain (MG) in quantum dot structures of narrow gap III-V compound semiconductor considering the wave-vector (k→) dependence of the optical transition matrix element. The band structures of these low band gap semiconducting materials with sufficiently separated split-off valance band are frequently described by the three energy band model of Kane. This has been adopted for analysis of the IOAC and MG taking InAs, InSb, Hg1-xCdxTe, and In1-xGaxAsyP1-y lattice matched to InP, as example of III-V compound semiconductors, having varied split-off energy band compared to their bulk band gap energy. It has been found that magnitude of the IOAC for quantum dots increases with increasing incident photon energy and the lines of absorption are more closely spaced in the three band model of Kane than those with parabolic energy band approximations reflecting the direct the influence of energy band parameters. The results show a significant deviation to the MG spectrum of narrow-gap materials having band nonparabolicity compared to the parabolic band model approximations. The results reflect the important role of valence band split-off energies in these narrow gap semiconductors.

Capacitance spectroscopy on n-type GaNAs/GaAs embedded quantum structure solar cells

NASA Astrophysics Data System (ADS)

Venter, Danielle; Bollmann, Joachim; Elborg, Martin; Botha, J. R.; Venter, André

2018-04-01

In this study, both deep level transient spectroscopy (DLTS) and admittance spectroscopy (AS) have been used to study the properties of electrically active deep level centers present in GaNAs/GaAs quantum wells (QWs) embedded in p-i-n solar cells. The structures were grown by molecular beam epitaxy (MBE). In particular, the electrical properties of samples with Si (n-type) doping of the QWs were investigated. DLTS revealed four deep level centers in the material, whereas only three were detected by AS. NextNano++ simulation software was used to model the sample band-diagrams to provide reasoning for the origin of the signals produced by both techniques.

Role of quantum correlations in light-matter quantum heat engines

NASA Astrophysics Data System (ADS)

Barrios, G. Alvarado; Albarrán-Arriagada, F.; Cárdenas-López, F. A.; Romero, G.; Retamal, J. C.

2017-11-01

We study a quantum Otto engine embedding a working substance composed of a two-level system interacting with a harmonic mode. The physical properties of the substance are described by a generalized quantum Rabi model arising in superconducting circuit realizations. We show that light-matter quantum correlation reduction during the hot bath stage and adiabatic stages act as an indicator for enhanced work extraction and efficiency, respectively. Also, we demonstrate that the anharmonic spectrum of the working substance has a direct impact on the transition from heat engine into refrigerator as the light-matter coupling is increased. These results shed light on the search for optimal conditions in the performance of quantum heat engines.

Conduction- and Valence-Band Energies in Bulk InAs(1-x)Sb(x) and Type II InAs(1-x) Sb(x)/InAs Strained-Layer Superlattices

DTIC Science & Technology

2013-03-08

tions in the studied SLS structures . The fit of the dependence of the valence- band energy of unstrained InAs1!xSbx on the composition x with a... band . STRUCTURES Bulk InAsSb epilayers on metamorphic buffers and InAsSb/InAs strained-layer superlattices (SLS) were grown on GaSb substrates by solid...meV in InAs and Ev = 0 meV in InSb. For InAsSb with 22.5% Sb grown on GaSb , an unstrained valence- band energy of Ev = !457 meV was obtained. For the

Persistent Optical Nuclear Spin Narrowing in a Singly Charged InAs Quantum Dot

DTIC Science & Technology

2012-02-01

explained in terms of an anisotropic hyperfine coupling between the hole spin and the nuclear spins. © 2012 Optical Society of America OCIS codes: 300.6250...February 2012 / J. Opt. Soc. Am. B A121 where γs (γt) is the spin (trion) dephasing rate, χ is half the pump Rabi frequency ΩR (ΩR # μEℏ , where μ is...probe ab- sorption at the dark state dip (αdip) and the Rabi sideband (αpeak): αdip # α0 χ2γs & γt$γ2s% χ4 & 2χ2γtγs & γ2t γ2s ; (11) αpeak # α0 χ2γs

Majorana zero modes in superconductor-semiconductor heterostructures

NASA Astrophysics Data System (ADS)

Lutchyn, R. M.; Bakkers, E. P. A. M.; Kouwenhoven, L. P.; Krogstrup, P.; Marcus, C. M.; Oreg, Y.

2018-05-01

Realizing topological superconductivity and Majorana zero modes in the laboratory is a major goal in condensed-matter physics. In this Review, we survey the current status of this rapidly developing field, focusing on proposals for the realization of topological superconductivity in semiconductor-superconductor heterostructures. We examine materials science progress in growing InAs and InSb semiconductor nanowires and characterizing these systems. We then discuss the observation of robust signatures of Majorana zero modes in recent experiments, paying particular attention to zero-bias tunnelling conduction measurements and Coulomb blockade experiments. We also outline several next-generation experiments probing exotic properties of Majorana zero modes, including fusion rules and non-Abelian exchange statistics. Finally, we discuss prospects for implementing Majorana-based topological quantum computation.

Screening of plant resources with anti-ice nucleation activity for frost damage prevention.

PubMed

Suzuki, Shingo; Fukuda, Satoshi; Fukushi, Yukiharu; Arakawa, Keita

2017-11-01

Previous studies have shown that some polyphenols have anti-ice nucleation activity (anti-INA) against ice-nucleating bacteria that contribute to frost damage. In the present study, leaf disk freezing assay, a test of in vitro application to plant leaves, was performed for the screening of anti-INA, which inhibits the ice nucleation activity of an ice-nucleating bacterium Erwinia ananas in water droplets on the leaf surfaces. The application of polyphenols with anti-INA, kaempferol 7-O-β-glucoside and (-)-epigallocatechin gallate, to the leaf disk freezing assay by cooling at -4--6 °C for 3 h, revealed that both the compounds showed anti-INAs against E. ananas in water droplets on the leaf surfaces. Further, this assay also revealed that the extracts of five plant leaves showed high anti-INA against E. ananas in water droplets on leaf surfaces, indicating that they are the candidate resources to protect crops from frost damage.

Prediction of Disease Case Severity Level To Determine INA CBGs Rate

NASA Astrophysics Data System (ADS)

Puspitorini, Sukma; Kusumadewi, Sri; Rosita, Linda

2017-03-01

Indonesian Case-Based Groups (INA CBGs) is case-mix payment system using software grouper application. INA CBGs consisting of four digits code where the last digits indicating the severity level of disease cases. Severity level influence by secondary diagnosis (complications and co-morbidity) related to resource intensity level. It is medical resources used to treat a hospitalized patient. Objectives of this research is developing decision support system to predict severity level of disease cases and illustrate INA CBGs rate by using data mining decision tree classification model. Primary diagnosis (DU), first secondary diagnosis (DS 1), and second secondary diagnosis (DS 2) are attributes that used as input of severity level. The training process using C4.5 algorithm and the rules will represent in the IF-THEN form. Credibility of the system analyzed through testing process and confusion matrix present the results. Outcome of this research shows that first secondary diagnosis influence significant to form severity level predicting rules from new disease cases and INA CBGs rate illustration.

Laser-driven two-electron quantum dot in plasmas

NASA Astrophysics Data System (ADS)

Bahar, M. K.; Soylu, A.

2018-06-01

We have investigated the energies of two-electron parabolic quantum dots (TEPQdots) embedded in plasmas characterized by more general exponential cosine screened Coulomb (MGECSC) potential under the action of a monochromatic, linearly polarized laser field by solving the corresponding Schrödinger equation numerically via the asymptotic iteration method. The four different cases of the MGECSC potential constituted by various sets of the potential parameters are reckoned in modeling of the interactions in the plasma environments which are Debye and quantum plasmas. The plasma environment is a remarkable experimental argument for the quantum dots and the interactions in plasma environments are different compared to the interactions in an environment without plasma and the screening specifications of the plasmas can be controlled through the plasma parameters. These findings constitute our major motivation in consideration of the plasma environments. An appreciable confinement effect is made up by implementing the laser field on the TEPQdot. The influences of the laser field on the system are included by using the Ehlotzky approximation, and then Kramers-Henneberger transformation is carried out for the corresponding Schrödinger equation. The influences of the ponderomotive force on two-electron quantum dots embedded in plasmas are investigated. The behaviours, the similarities and the functionalities of the laser field, the plasma environment, and the quantum dot confinement are also scrutinized. In addition, the role of the plasma environments in the mentioned analysis is also discussed in detail.

A universal quantum module for quantum communication, computation, and metrology

NASA Astrophysics Data System (ADS)

Hanks, Michael; Lo Piparo, Nicolò; Trupke, Michael; Schmiedmayer, Jorg; Munro, William J.; Nemoto, Kae

2017-08-01

In this work, we describe a simple module that could be ubiquitous for quantum information based applications. The basic modules comprises a single NV- center in diamond embedded in an optical cavity, where the cavity mediates interactions between photons and the electron spin (enabling entanglement distribution and efficient readout), while the nuclear spins constitutes a long-lived quantum memories capable of storing and processing quantum information. We discuss how a network of connected modules can be used for distributed metrology, communication and computation applications. Finally, we investigate the possible use of alternative diamond centers (SiV/GeV) within the module and illustrate potential advantages.

Effect of Two-Step Metal Organic Chemical Vapor Deposition Growth on Quality, Diameter and Density of InAs Nanowires on Si (111) Substrate

NASA Astrophysics Data System (ADS)

Yu, Hung Wei; Anandan, Deepak; Hsu, Ching Yi; Hung, Yu Chih; Su, Chun Jung; Wu, Chien Ting; Kakkerla, Ramesh Kumar; Ha, Minh Thien Huu; Huynh, Sa Hoang; Tu, Yung Yi; Chang, Edward Yi

2018-02-01

High-density (˜ 80/um2) vertical InAs nanowires (NWs) with small diameters (˜ 28 nm) were grown on bare Si (111) substrates by means of two-step metal organic chemical vapor deposition. There are two critical factors in the growth process: (1) a critical nucleation temperature for a specific In molar fraction (approximately 1.69 × 10-5 atm) is the key factor to reduce the size of the nuclei and hence the diameter of the InAs NWs, and (2) a critical V/III ratio during the 2nd step growth will greatly increase the density of the InAs NWs (from 45 μm-2 to 80 μm-2) and at the same time keep the diameter small. The high-resolution transmission electron microscopy and selected area diffraction patterns of InAs NWs grown on Si exhibit a Wurtzite structure and no stacking faults. The observed longitudinal optic peaks in the Raman spectra were explained in terms of the small surface charge region width due to the small NW diameter and the increase of the free electron concentration, which was consistent with the TCAD program simulation of small diameter (< 40 nm) InAs NWs.

Comparison between mini mental state examination (MMSE) and Montreal cognitive assessment Indonesian version (MoCA-Ina) as an early detection of cognitive impairments in post-stroke patients

NASA Astrophysics Data System (ADS)

Lestari, S.; Mistivani, I.; Rumende, C. M.; Kusumaningsih, W.

2017-08-01

Mild cognitive impairment (MCI) is defined as cognitive impairment that may never develop into dementia. Cognitive impairment is one long-term complication of a stroke. The Mini Mental State Examination (MMSE), which is commonly used as a screening tool for cognitive impairment, has a low sensitivity to detect cognitive impairment, especially MCI. Alternatively, the Montreal Cognitive Assessment Indonesian version (MoCA-Ina) has been reported to have a higher sensitivity than the MMSE. The aim of this study was to compare the proportion of MCI identified between the MMSE and MoCA-Ina in stroke patients. This was a cross-sectional study of stroke outpatients who attended the Polyclinic Neuromuscular Division, Rehabilitation Department, and Polyclinic Stroke, Neurology Department Cipto Mangunkusumo General Hospital, Jakarta. The proportion of MCI identified using the MMSE was 31.03% compared to 72.41% when using the MoCA-Ina. This difference was statistically significant (Fisher’s exact test, p = 0.033). The proportion of MCI in stroke patients was higher when using the MoCA-Ina compared to the MMSE. The MoCA-Ina should be used as an alternative in the early detection of MCI in stroke patients, especially those undergoing rehabilitation.