High current gain transistor laser

PubMed Central

Liang, Song; Qiao, Lijun; Zhu, Hongliang; Wang, Wei

2016-01-01

A transistor laser (TL), having the structure of a transistor with multi-quantum wells near its base region, bridges the functionality gap between lasers and transistors. However, light emission is produced at the expense of current gain for all the TLs reported up to now, leading to a very low current gain. We propose a novel design of TLs, which have an n-doped InP layer inserted in the emitter ridge. Numerical studies show that a current flow aperture for only holes can be formed in the center of the emitter ridge. As a result, the common emitter current gain can be as large as 143.3, which is over 15 times larger than that of a TL without the aperture. Besides, the effects of nonradiative recombination defects can be reduced greatly because the flow of holes is confined in the center region of the emitter ridge. PMID:27282466

Ionization monitor with improved ultra-high megohm resistor

DOEpatents

Burgess, Edward T.

1988-11-05

An ionization monitor measures extremely small currents using a resistor containing a beta emitter to generate ion-pairs which are collected as current when the device is used as a feedback resistor in an electrometer circuit. By varying the amount of beta emitter, the resistance of the resistor may be varied.

Highly reliable field electron emitters produced from reproducible damage-free carbon nanotube composite pastes with optimal inorganic fillers.

PubMed

Kim, Jae-Woo; Jeong, Jin-Woo; Kang, Jun-Tae; Choi, Sungyoul; Ahn, Seungjoon; Song, Yoon-Ho

2014-02-14

Highly reliable field electron emitters were developed using a formulation for reproducible damage-free carbon nanotube (CNT) composite pastes with optimal inorganic fillers and a ball-milling method. We carefully controlled the ball-milling sequence and time to avoid any damage to the CNTs, which incorporated fillers that were fully dispersed as paste constituents. The field electron emitters fabricated by printing the CNT pastes were found to exhibit almost perfect adhesion of the CNT emitters to the cathode, along with good uniformity and reproducibility. A high field enhancement factor of around 10,000 was achieved from the CNT field emitters developed. By selecting nano-sized metal alloys and oxides and using the same formulation sequence, we also developed reliable field emitters that could survive high-temperature post processing. These field emitters had high durability to post vacuum annealing at 950 °C, guaranteeing survival of the brazing process used in the sealing of field emission x-ray tubes. We evaluated the field emitters in a triode configuration in the harsh environment of a tiny vacuum-sealed vessel and observed very reliable operation for 30 h at a high current density of 350 mA cm(-2). The CNT pastes and related field emitters that were developed could be usefully applied in reliable field emission devices.

Highly reliable field electron emitters produced from reproducible damage-free carbon nanotube composite pastes with optimal inorganic fillers

NASA Astrophysics Data System (ADS)

Kim, Jae-Woo; Jeong, Jin-Woo; Kang, Jun-Tae; Choi, Sungyoul; Ahn, Seungjoon; Song, Yoon-Ho

2014-02-01

Highly reliable field electron emitters were developed using a formulation for reproducible damage-free carbon nanotube (CNT) composite pastes with optimal inorganic fillers and a ball-milling method. We carefully controlled the ball-milling sequence and time to avoid any damage to the CNTs, which incorporated fillers that were fully dispersed as paste constituents. The field electron emitters fabricated by printing the CNT pastes were found to exhibit almost perfect adhesion of the CNT emitters to the cathode, along with good uniformity and reproducibility. A high field enhancement factor of around 10 000 was achieved from the CNT field emitters developed. By selecting nano-sized metal alloys and oxides and using the same formulation sequence, we also developed reliable field emitters that could survive high-temperature post processing. These field emitters had high durability to post vacuum annealing at 950 °C, guaranteeing survival of the brazing process used in the sealing of field emission x-ray tubes. We evaluated the field emitters in a triode configuration in the harsh environment of a tiny vacuum-sealed vessel and observed very reliable operation for 30 h at a high current density of 350 mA cm-2. The CNT pastes and related field emitters that were developed could be usefully applied in reliable field emission devices.

Emittance measurements of Space Shuttle orbiter reinforced carbon-carbon

NASA Technical Reports Server (NTRS)

Caram, Jose M.; Bouslog, Stanley A.; Cunnington, George R., Jr.

1992-01-01

The spectral and total normal emittance of the Reinforced Carbon-Carbon (RCC) used on Space Shuttle nose cap and wing leading edges has been measured at room temperature and at surface temperatures of 1200 to 2100 K. These measurements were made on virgin and two flown RCC samples. Room temperature directional emittance data were also obtained and were used to determine the total hemispherical emittance of RCC as a function of temperature. Results of the total normal emittance for the virgin samples showed good agreement with the current RCC emittance design curve; however, the data from the flown samples showed an increase in the emittance at high temperature possibly due to exposure from flight environments.

Recent progress of carbon nanotube field emitters and their application.

PubMed

Seelaboyina, Raghunandan; Choi, Wonbong

2007-01-01

The potential of utilizing carbon nanotube field emission properties is an attractive feature for future vacuum electronic devices including: high power microwave, miniature x-ray, backlight for liquid crystal displays and flat panel displays. Their high emission current, nano scale geometry, chemical inertness and low threshold voltage for emission are attractive features for the field emission applications. In this paper we review the recent developments of carbon nanotube field emitters and their device applications. We also discuss the latest results on field emission current amplification achieved with an electron multiplier microchannel plate, and emission performance of multistage field emitter based on oxide nanowire operated in poor vacuum.

Comparative study of active plasma lenses in high-quality electron accelerator transport lines

NASA Astrophysics Data System (ADS)

van Tilborg, J.; Barber, S. K.; Benedetti, C.; Schroeder, C. B.; Isono, F.; Tsai, H.-E.; Geddes, C. G. R.; Leemans, W. P.

2018-05-01

Electrically discharged active plasma lenses (APLs) are actively pursued in compact high-brightness plasma-based accelerators due to their high-gradient, tunable, and radially symmetric focusing properties. In this manuscript, the APL is experimentally compared with a conventional quadrupole triplet, highlighting the favorable reduction in the energy dependence (chromaticity) in the transport line. Through transport simulations, it is explored how the non-uniform radial discharge current distribution leads to beam-integrated emittance degradation and a charge density reduction at focus. However, positioning an aperture at the APL entrance will significantly reduce emittance degradation without additional loss of charge in the high-quality core of the beam. An analytical model is presented that estimates the emittance degradation from a short beam driving a longitudinally varying wakefield in the APL. Optimizing laser plasma accelerator operation is discussed where emittance degradation from the non-uniform discharge current (favoring small beams inside the APL) and wakefield effects (favoring larger beam sizes) is minimized.

Comparative study of active plasma lenses in high-quality electron accelerator transport lines

DOE Office of Scientific and Technical Information (OSTI.GOV)

van Tilborg, J.; Barber, S. K.; Benedetti, C.

Electrically discharged active plasma lenses (APLs) are actively pursued in compact high-brightness plasma-based accelerators due to their high-gradient, tunable, and radially symmetric focusing properties. In this paper, the APL is experimentally compared with a conventional quadrupole triplet, highlighting the favorable reduction in the energy dependence (chromaticity) in the transport line. Through transport simulations, it is explored how the non-uniform radial discharge current distribution leads to beam-integrated emittance degradation and a charge density reduction at focus. However, positioning an aperture at the APL entrance will significantly reduce emittance degradation without additional loss of charge in the high-quality core of the beam.more » An analytical model is presented that estimates the emittance degradation from a short beam driving a longitudinally varying wakefield in the APL. Finally, optimizing laser plasma accelerator operation is discussed where emittance degradation from the non-uniform discharge current (favoring small beams inside the APL) and wakefield effects (favoring larger beam sizes) is minimized.« less

Comparative study of active plasma lenses in high-quality electron accelerator transport lines

DOE PAGES

van Tilborg, J.; Barber, S. K.; Benedetti, C.; ...

2018-03-13

Electrically discharged active plasma lenses (APLs) are actively pursued in compact high-brightness plasma-based accelerators due to their high-gradient, tunable, and radially symmetric focusing properties. In this paper, the APL is experimentally compared with a conventional quadrupole triplet, highlighting the favorable reduction in the energy dependence (chromaticity) in the transport line. Through transport simulations, it is explored how the non-uniform radial discharge current distribution leads to beam-integrated emittance degradation and a charge density reduction at focus. However, positioning an aperture at the APL entrance will significantly reduce emittance degradation without additional loss of charge in the high-quality core of the beam.more » An analytical model is presented that estimates the emittance degradation from a short beam driving a longitudinally varying wakefield in the APL. Finally, optimizing laser plasma accelerator operation is discussed where emittance degradation from the non-uniform discharge current (favoring small beams inside the APL) and wakefield effects (favoring larger beam sizes) is minimized.« less

High-current electron gun with a planar magnetron integrated with an explosive-emission cathode

NASA Astrophysics Data System (ADS)

Kiziridi, P. P.; Ozur, G. E.

2017-05-01

A new high-current electron gun with plasma anode and explosive-emission cathode integrated with planar pulsed powered magnetron is described. Five hundred twelve copper wires 1 mm in diameter and 15 mm in height serve as emitters. These emitters are installed on stainless steel disc (substrate) with 3-mm distance between them. Magnetron discharge plasma provides increased ion density on the periphery of plasma anode formed by high-current Penning discharge ignited within several milliseconds after starting of the magnetron discharge. The increased on the periphery ion density improves the uniformity of high-current electron beam produced in such an electron gun.

Multisource inverse-geometry CT. Part II. X-ray source design and prototype

PubMed Central

Neculaes, V. Bogdan; Caiafa, Antonio; Cao, Yang; De Man, Bruno; Edic, Peter M.; Frutschy, Kristopher; Gunturi, Satish; Inzinna, Lou; Reynolds, Joseph; Vermilyea, Mark; Wagner, David; Zhang, Xi; Zou, Yun; Pelc, Norbert J.; Lounsberry, Brian

2016-01-01

Purpose: This paper summarizes the development of a high-power distributed x-ray source, or “multisource,” designed for inverse-geometry computed tomography (CT) applications [see B. De Man et al., “Multisource inverse-geometry CT. Part I. System concept and development,” Med. Phys. 43, 4607–4616 (2016)]. The paper presents the evolution of the source architecture, component design (anode, emitter, beam optics, control electronics, high voltage insulator), and experimental validation. Methods: Dispenser cathode emitters were chosen as electron sources. A modular design was adopted, with eight electron emitters (two rows of four emitters) per module, wherein tungsten targets were brazed onto copper anode blocks—one anode block per module. A specialized ceramic connector provided high voltage standoff capability and cooling oil flow to the anode. A matrix topology and low-noise electronic controls provided switching of the emitters. Results: Four modules (32 x-ray sources in two rows of 16) have been successfully integrated into a single vacuum vessel and operated on an inverse-geometry computed tomography system. Dispenser cathodes provided high beam current (>1000 mA) in pulse mode, and the electrostatic lenses focused the current beam to a small optical focal spot size (0.5 × 1.4 mm). Controlled emitter grid voltage allowed the beam current to be varied for each source, providing the ability to modulate beam current across the fan of the x-ray beam, denoted as a virtual bowtie filter. The custom designed controls achieved x-ray source switching in <1 μs. The cathode-grounded source was operated successfully up to 120 kV. Conclusions: A high-power, distributed x-ray source for inverse-geometry CT applications was successfully designed, fabricated, and operated. Future embodiments may increase the number of spots and utilize fast read out detectors to increase the x-ray flux magnitude further, while still staying within the stationary target inherent thermal limitations. PMID:27487878

Multisource inverse-geometry CT. Part II. X-ray source design and prototype

DOE Office of Scientific and Technical Information (OSTI.GOV)

Neculaes, V. Bogdan, E-mail: neculaes@ge.com; Caia

2016-08-15

Purpose: This paper summarizes the development of a high-power distributed x-ray source, or “multisource,” designed for inverse-geometry computed tomography (CT) applications [see B. De Man et al., “Multisource inverse-geometry CT. Part I. System concept and development,” Med. Phys. 43, 4607–4616 (2016)]. The paper presents the evolution of the source architecture, component design (anode, emitter, beam optics, control electronics, high voltage insulator), and experimental validation. Methods: Dispenser cathode emitters were chosen as electron sources. A modular design was adopted, with eight electron emitters (two rows of four emitters) per module, wherein tungsten targets were brazed onto copper anode blocks—one anode blockmore » per module. A specialized ceramic connector provided high voltage standoff capability and cooling oil flow to the anode. A matrix topology and low-noise electronic controls provided switching of the emitters. Results: Four modules (32 x-ray sources in two rows of 16) have been successfully integrated into a single vacuum vessel and operated on an inverse-geometry computed tomography system. Dispenser cathodes provided high beam current (>1000 mA) in pulse mode, and the electrostatic lenses focused the current beam to a small optical focal spot size (0.5 × 1.4 mm). Controlled emitter grid voltage allowed the beam current to be varied for each source, providing the ability to modulate beam current across the fan of the x-ray beam, denoted as a virtual bowtie filter. The custom designed controls achieved x-ray source switching in <1 μs. The cathode-grounded source was operated successfully up to 120 kV. Conclusions: A high-power, distributed x-ray source for inverse-geometry CT applications was successfully designed, fabricated, and operated. Future embodiments may increase the number of spots and utilize fast read out detectors to increase the x-ray flux magnitude further, while still staying within the stationary target inherent thermal limitations.« less

High current plasma electron emitter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fiksel, G.; Almagri, A.F.; Craig, D.

1995-07-01

A high current plasma electron emitter based on a miniature plasma source has been developed. The emitting plasma is created by a pulsed high current gas discharge. The electron emission current is 1 kA at 300 V at the pulse duration of 10 ms. The prototype injector described in this paper will be used for a 20 kA electrostatic current injection experiment in the Madison Symmetric Torus (MST) reversed-field pinch. The source will be replicated in order to attain this total current requirement. The source has a simple design and has proven very reliable in operation. A high emission current,more » small size (3.7 cm in diameter), and low impurity generation make the source suitable for a variety of fusion and technological applications.« less

Thermal emittance enhancement of graphite-copper composites for high temperature space based radiators

NASA Technical Reports Server (NTRS)

Rutledge, Sharon K.; Forkapa, Mark J.; Cooper, Jill M.

1991-01-01

Graphite-copper composites are candidate materials for space based radiators. The thermal emittance of this material, however, is a factor of two lower than the desired emittance for these systems of greater than or equal to 0.85. Arc texturing was investigated as a surface modification technique for enhancing the emittance of the composite. Since the outer surface of the composite is copper, and samples of the composite could not be readily obtained for testing, copper was used for optimization testing. Samples were exposed to various frequencies and currents of arcs during texturing. Emittances near the desired goal were achieved at frequencies less than 500 Hz. Arc current did not appear to play a major role under 15 amps. Particulate carbon was observed on the surface, and was easily removed by vibration and handling. In order to determine morphology adherence, ultrasonic cleaning was used to remove the loosely adherent material. This reduced the emittance significantly. Emittance was found to increase with increasing frequency for the cleaned samples up to 500 Hz. The highest emittance achieved on these samples over the temperature range of interest was 0.5 to 0.6, which is approximately a factor of 25 increase over the untextured copper emittance.

Studies of silicon p-n junction solar cells

NASA Technical Reports Server (NTRS)

Neugroschel, A.; Lindholm, F. A.

1979-01-01

To provide theoretical support for investigating different ways to obtain high open-circuit voltages in p-n junction silicon solar cells, an analytical treatment of heavily doped transparent-emitter devices is presented that includes the effects of bandgap narrowing, Fermi-Dirac statistics, a doping concentration gradient, and a finite surface recombination velocity at the emitter surface. Topics covered include: (1) experimental determination of bandgap narrowing in the emitter of silicon p-n junction devices; (2) heavily doped transparent regions in junction solar cells, diodes, and transistors; (3) high-low-emitter solar cell; (4) determination of lifetimes and recombination currents in p-n junction solar cells; (5) MOS and oxide-charged-induced BSF solar cells; and (6) design of high efficiency solar cells for space and terrestrial applications.

The effect of plasma density and emitter geometry on space charge limits for field emitter array electron charge emission into a space plasma

NASA Astrophysics Data System (ADS)

Morris, Dave; Gilchrist, Brian; Gallimore, Alec

2001-02-01

Field Emitter Array Cathodes (FEACs) are a new technology being developed for several potential spacecraft electron emission and charge control applications. Instead of a single hot (i.e., high powered) emitter, or a gas dependant plasma contactor, FEAC systems consist of many (hundreds or thousands) of small (micron level) cathode/gate pairs printed on a semiconductor wafer that effect cold field emission at relatively low voltages. Each individual cathode emits only micro-amp level currents, but a functional array is capable of amp/cm2 current densities. It is hoped that thus FEAC offers the possibility of a relatively low-power, simple to integrate, and inexpensive technique for the high level of current emissions that are required for an electrodynamic tether (EDT) propulsion mission. Space charge limits are a significant concern for the EDT application. Vacuum chamber tests and PIC simulations are being performed at the University of Michigan Plasmadynamics and Electric Propulsion Laboratory and Space Physics Research Laboratory to determine the effect of plasma density and emitter geometry on space charge limitations. The results of this work and conclusions to date of how to best mitigate space charge limits will be presented. .

Recent Progress in Silicon-Based MEMS Field Emission Thrusters

NASA Astrophysics Data System (ADS)

Lenard, Roger X.; Kravitz, Stanley H.; Tajmar, Martin

2005-02-01

The Indium Field Emission Thruster (In-FET) is a highly characterized and space-proven device based on space-qualified liquid metal ion sources. There is also extensive experience with liquid metal ion sources for high-brightness semiconductor fabrications and inspection Like gridded ion engines, In-FETs efficiently accelerate ions through a series of high voltage electrodes. Instead of a plasma discharge to generate ions, which generates a mixture of singly and doubly charged ions as well as neutrals, indium metal is melted (157°C) and fed to the tip of a capillary tube where very high local electric fields perform more-efficient field emission ionization, providing nearly 100% singly charged species. In-FETs do not have the associated losses or lifetime concerns of a magnetically confined discharge and hollow cathode in ion thrusters. For In-FETs, propellant efficiencies ˜100% stipulate single-emitter currents ⩽10μA, perhaps as low as 5μA of current. This low emitter current results in ⩽0.5 W/emitter. Consequently, if the In-FET is to be used for future Human and Robotic missions under President Bush's Exploration plan, a mechanism to generate very high power levels is necessary. Efficient high-power operation requires many emitter/extractor pairs. Conventional fabrication techniques allow 1-10 emitters in a single module, with pain-staking precision required. Properly designed and fabricated In-FETs possess electric-to-jet efficiency >90% and a specific mass <0.25 kg/kWe. MEMS techniques allow reliable batch processing with ˜160,000 emitters in a 10×10-cm array. Developing a 1.5kW 10×10-cm module is a necessary stepping-stone for >500 kWe systems where groups of 9 or 16 modules, with a single PPU/feed system, form the building blocks for even higher-power exploration systems. In 2003, SNL and ARCS produced a MEMS-based In-FET 5×5 emitter module with individually addressable emitter/extractor pairs on a 15×15mm wafer. The first MEMS thruster prototype has already been tested to demonstrate the proof-of-concept in laboratory-scale testing. In this paper we discuss progress that has been achieved in the past year on fabricating silicon-based MEMS In-FETs.

The anodic emitter effect and its inversion demonstrated by temperature measurements at doped and undoped tungsten electrodes

NASA Astrophysics Data System (ADS)

Hoebing, T.; Bergner, A.; Hermanns, P.; Mentel, J.; Awakowicz, P.

2016-04-01

The admixture of a small amount of emitter oxides, e.g. \\text{Th}{{\\text{O}}2} , \\text{L}{{\\text{a}}2}{{\\text{O}}3} or \\text{C}{{\\text{e}}2}{{\\text{O}}3} to tungsten generates the so-called emitter effect. It reduces the work function of tungsten cathodes, that are applied in high intensity discharge (HID) lamps. After leaving the electrode bulk and moving to the surface, a monolayer of Th, La, or Ce atoms is formed on the surface, which reduces the effective work function ϕ. Depending on the coverage of the electrode, the effective reduction in ϕ is subjected to the thermal desorption of the monolayer from the hot electrode surface. The thermal desorption of emitter atoms from the cathode is compensated not only by the supply from the interior of the electrode and by surface diffusion of the emitter material to its tip, but also to a large extent by a repatriation of the emitter ions from the plasma by the strong electric field in front of the cathode. Yet, an emitter ion current from the arc discharge to the anode may only be present, if the anode is cold enough to refrain from thermionic emission. Therefore, the ability of emitter oxides to reduce the temperature of tungsten anodes is only given for a moderate temperature so that the thermal desorption is low and an additional ion current is present in front of the anode. A higher electrode temperature leads to their evaporation and to an inversion of the emitter effect, which increases the temperature of the respective anodes in comparison with pure tungsten anodes. Within this article, the emitter effect of doped tungsten anodes and the transition to its inversion is investigated for thoriated, lanthanated, and ceriated tungsten electrodes by measurements of the electrode temperature in dependence on the discharge current. It is shown for a lanthanated and a ceriated anode that the emitter effect is sustained by an ion current at anode temperatures at which the thermal evaporation of emitter material is completed.

Development of reverse biased p-n junction electron emission

NASA Technical Reports Server (NTRS)

Fowler, P.; Muly, E. C.

1971-01-01

A cold cathode emitter of hot electrons for use as a source of electrons in vacuum gauges and mass spectrometers was developed using standard Norton electroluminescent silicon carbide p-n diodes operated under reverse bias conditions. Continued development including variations in the geometry of these emitters was carried out such that emitters with an emission efficiency (emitted current/junction current) as high as 3 x 10-0.00001 were obtained. Pulse measurements of the diode characteristics were made and showed that higher efficiency can be attained under pulse conditions probably due to the resulting lower temperatures resulting from such operation.

Brightness-enhanced high-efficiency single emitters for fiber laser pumping

NASA Astrophysics Data System (ADS)

Yanson, Dan; Rappaport, Noam; Shamay, Moshe; Cohen, Shalom; Berk, Yuri; Klumel, Genadi; Don, Yaroslav; Peleg, Ophir; Levy, Moshe

2013-02-01

Reliable single emitters delivering <10W in the 9xx nm spectral range, are common energy sources for fiber laser pumps. The brightness (radiance) of a single emitter, which connotes the angular concentration of the emitted energy, is just as important a parameter as the output power alone for fiber coupling applications. We report on the development of high-brightness single emitters that demonstrate <12W output with 60% wall-plug efficiency and a lateral emission angle that is compatible with coupling into 0.15 NA delivery fiber. Using a purpose developed active laser model, simulation of far-field patterns in the lateral (slow) axis can be performed for different epitaxial wafer structures. By optimizing both the wafer and chip designs, we have both increased the device efficiency and improved the slow-axis divergence in high-current operation. Device reliability data are presented. The next-generation emitters will be integrated in SCD's NEON fiber pump modules to upgrade the pump output towards higher ex-fiber powers with high efficiency.

Coherent beam combining architectures for high power tapered laser arrays

NASA Astrophysics Data System (ADS)

Schimmel, G.; Janicot, S.; Hanna, M.; Decker, J.; Crump, P.; Erbert, G.; Witte, U.; Traub, M.; Georges, P.; Lucas-Leclin, G.

2017-02-01

Coherent beam combining (CBC) aims at increasing the spatial brightness of lasers. It consists in maintaining a constant phase relationship between different emitters, in order to combine them constructively in one single beam. We have investigated the CBC of an array of five individually-addressable high-power tapered laser diodes at λ = 976 nm, in two architectures: the first one utilizes the self-organization of the lasers in an interferometric extended-cavity, which ensures their mutual coherence; the second one relies on the injection of the emitters by a single-frequency laser diode. In both cases, the coherent combining of the phase-locked beams is ensured on the front side of the array by a transmission diffractive grating with 98% efficiency. The passive phase-locking of the laser bar is obtained up to 5 A (per emitter). An optimization algorithm is implemented to find the proper currents in the five ridge sections that ensured the maximum combined power on the front side. Under these conditions we achieve a maximum combined power of 7.5 W. In the active MOPA configuration, we can increase the currents in the tapered sections up to 6 A and get a combined power of 11.5 W, corresponding to a combining efficiency of 76%. It is limited by the beam quality of the tapered emitters and by fast phase fluctuations between emitters. Still, these results confirm the potential of CBC approaches with tapered lasers to provide a high-power and high-brightness beam, and compare with the current state-of-the-art with laser diodes.

Evidence of low injection efficiency for implanted p-emitters in bipolar 4H-SiC high-voltage diodes

NASA Astrophysics Data System (ADS)

Matthus, Christian D.; Huerner, Andreas; Erlbacher, Tobias; Bauer, Anton J.; Frey, Lothar

2018-06-01

In this study, the influence of the emitter efficiency on the forward current-voltage characteristics, especially the conductivity modulation of bipolar SiC-diodes was analyzed. It was determined that the emitter efficiency of p-emitters formed by ion implantation is significantly lower compared to p-emitters formed by epitaxy. In contrast to comparable studies, experimental approach was arranged that the influence of the quality of the drift-layer or the thickness of the emitter on the conductivity modulation could be excluded for the fabricated bipolar SiC-diodes of this work. Thus, it can be established that the lower emitter injection efficiency is mainly caused by the reduced electron lifetime in p-emitters formed by ion implantation. Therefore, a significant enhancement of the electron lifetime in implanted p-emitters is mandatory for e.g. SiC-MPS-diodes where the functionality of the devices depends significantly on the injection efficiency.

Multi-spectral investigation of bulk and facet failures in high-power single emitters at 980 nm

NASA Astrophysics Data System (ADS)

Yanson, Dan; Levy, Moshe; Shamay, Moshe; Cohen, Shalom; Shkedy, Lior; Berk, Yuri; Tessler, Renana; Klumel, Genadi; Rappaport, Noam; Karni, Yoram

2013-03-01

Reliable single emitters delivering >10W in the 9xx nm spectral range, are common building blocks for fiber laser pumps. As facet passivation techniques can suppress or delay catastrophic optical mirror damage (COMD) extending emitter reliability into hundreds of thousands of hours, other, less dominant, failure modes such as intra-chip catastrophic optical bulk damage (COBD) become apparent. Based on our failure statistics in high current operation, only ~52% of all failures can be attributed to COMD. Imaging through a window opened in the metallization on the substrate (n) side of a p-side down mounted emitter provides valuable insight into both COMD and COBD failure mechanisms. We developed a laser ablation process to define a window on the n-side of an InGaAs/AlGaAs 980nm single emitter that is overlaid on the pumped 90μm stripe on the p-side. The ablation process is compatible with the chip wire-bonding, enabling the device to be operated at high currents with high injection uniformity. We analyzed both COMD and COBD failed emitters in the electroluminescence and mid-IR domains supported by FIB/SEM observation. The ablated devices revealed branching dark line patterns, with a line origin either at the facet center (COMD case) or near the stripe edge away from the facet (COBD case). In both cases, the branching direction is always toward the rear facet (against the photon density gradient), with SEM images revealing a disordered active layer structure. Absorption levels between 0.22eV - 0.55eV were observed in disordered regions by FT-IR spectroscopy. Temperature mapping of a single emitter in the MWIR domain was performed using an InSb detector. We also report an electroluminescence study of a single emitter just before and after failure.

Lattice and beam optics design for suppression of CSR-induced emittance growth at the KEK-ERL test facility

NASA Astrophysics Data System (ADS)

Shimada, M.; Yokoya, K.; Suwada, T.; Enomoto, A.

2007-06-01

The lattice and beam optics of the arc section of the KEK-ERL test facility, having an energy of 200 MeV, were optimized to efficiently suppress emittance growth based on a simulation using a particle-tracking method taking coherent synchrotron radiation effects into account. The lattice optimization in the arc section was performed under two conditions: a high-current mode with a bunch charge of 76.9 pC without bunch compression, and a short-bunch mode with bunch compression, producing a final bunch length of around 0.1 ps. The simulation results showed that, in the high-current mode, emittance growth was efficiently suppressed by keeping a root-mean-square (rms) bunch length of 1 ps at a bunch charge of 76.9 pC, and in the short-bunch mode, emittance growth was kept within permissible limits with a maximum allowable bunch charge of 23.1 pC at an rms bunch length of 0.1 ps.

Pulsed hybrid field emitter

DOEpatents

Sampayan, Stephen E.

1998-01-01

A hybrid emitter exploits the electric field created by a rapidly depoled ferroelectric material. Combining the emission properties of a planar thin film diamond emitter with a ferroelectric alleviates the present technological problems associated with both types of emitters and provides a robust, extremely long life, high current density cathode of the type required by emerging microwave power generation, accelerator technology and display applications. This new hybrid emitter is easy to fabricate and not susceptible to the same failures which plague microstructure field emitter technology. Local electrode geometries and electric field are determined independently from those for optimum transport and brightness preservation. Due to the large amount of surface charge created on the ferroelectric, the emitted electrons have significant energy, thus eliminating the requirement for specialized phosphors in emissive flat-panel displays.

Pulsed hybrid field emitter

DOEpatents

Sampayan, S.E.

1998-03-03

A hybrid emitter exploits the electric field created by a rapidly depoled ferroelectric material. Combining the emission properties of a planar thin film diamond emitter with a ferroelectric alleviates the present technological problems associated with both types of emitters and provides a robust, extremely long life, high current density cathode of the type required by emerging microwave power generation, accelerator technology and display applications. This new hybrid emitter is easy to fabricate and not susceptible to the same failures which plague microstructure field emitter technology. Local electrode geometries and electric field are determined independently from those for optimum transport and brightness preservation. Due to the large amount of surface charge created on the ferroelectric, the emitted electrons have significant energy, thus eliminating the requirement for specialized phosphors in emissive flat-panel displays. 11 figs.

Graphene-on-GaN Hot Electron Transistor

NASA Astrophysics Data System (ADS)

Zubair, Ahmad; Nourbakhsh, Amirhasan; Hong, Jin-Yong; Song, Yi; Qi, Meng; Jena, Debdeep; Kong, Jing; Dresselhaus, Mildred S.; Palacios, Tomas

Hot electron transistors (HETs) are promising devices for potential high-frequency operation that currently CMOS cannot provide. In an HET, carrier transport is due to the injection of hot electrons from an emitter to a collector which is modulated by a base electrode. Therefore, ultra-thin base electrodes are needed to facilitate ultra-short transit time and high performance for THz operation range. In this regard, graphene, the thinnest conductive membrane in nature, is considered the best candidate for the base material in HETs. The existing HETs with SiO2/Si as emitter stack suffer from low current gain and output current density. In this work, we use the two-dimensional electron gas (2-DEG) in a GaN-based heterostructure as emitter and monolayer graphene as the base electrode. The transport study of the proof-of-concept device shows high output current density (>50 A/cm2) , current gain (>3) and ballistic injection efficiency of 75%. These results indicate that performance parameters can be further improved by engineering the band offset of the graphene/collector stack and improved interface between graphene and GaN. Army Research Office (ARO) (Grant Nos. W911NF-14-2-0071, 6930265, and 6930861).

Operational experience with nanocoulomb bunch charges in the Cornell photoinjector

DOE PAGES

Bartnik, Adam; Gulliford, Colwyn; Bazarov, Ivan; ...

2015-08-19

Characterization of 9–9.5 MeV electron beams produced in the dc-gun based Cornell photoinjector is given for bunch charges ranging from 20 pC to 2 nC. Comparison of the measured emittances and longitudinal current profiles to optimized 3D space charge simulations yields excellent agreement for bunch charges up to 1 nC when the measured laser distribution is used to generate initial particle distributions in simulation. Analysis of the scaling of the measured emittance with bunch charge shows that the emittance scales roughly as the square root of the bunch charge up to 300 pC, above which the trend becomes linear. Furthermore,more » these measurements demonstrate that the Cornell photoinjector can produce cathode emittance dominated beams meeting the emittance and peak current specifications for next generation free electron lasers operating at high repetition rate. In addition, the 1 and 2 nC results are relevant to the electron ion collider community.« less

Crystalline silicon solar cells with high resistivity emitter

NASA Astrophysics Data System (ADS)

Panek, P.; Drabczyk, K.; Zięba, P.

2009-06-01

The paper presents a part of research targeted at the modification of crystalline silicon solar cell production using screen-printing technology. The proposed process is based on diffusion from POCl3 resulting in emitter with a sheet resistance on the level of 70 Ω/□ and then, shaped by high temperature passivation treatment. The study was focused on a shallow emitter of high resistivity and on its influence on output electrical parameters of a solar cell. Secondary ion mass spectrometry (SIMS) has been employed for appropriate distinguishing the total donor doped profile. The solar cell parameters were characterized by current-voltage characteristics and spectral response (SR) methods. Some aspects playing a role in suitable manufacturing process were discussed. The situation in a photovoltaic industry with emphasis on silicon supply and current prices of solar cells, modules and photovoltaic (PV) systems are described. The economic and quantitative estimation of the PV world market is shortly discussed.

Pyrimidine-based twisted donor-acceptor delayed fluorescence molecules: a new universal platform for highly efficient blue electroluminescence.

PubMed

Park, In Seob; Komiyama, Hideaki; Yasuda, Takuma

2017-02-01

Deep-blue emitters that can harvest both singlet and triplet excited states to give high electron-to-photon conversion efficiencies are highly desired for applications in full-color displays and white lighting devices based on organic light-emitting diodes (OLEDs). Thermally activated delayed fluorescence (TADF) molecules based on highly twisted donor-acceptor (D-A) configurations are promising emitting dopants for the construction of efficient deep-blue OLEDs. In this study, a simple and versatile D-A system combining acridan-based donors and pyrimidine-based acceptors has been developed as a new platform for high-efficiency deep-blue TADF emitters. The designed pre-twisted acridan-pyrimidine D-A molecules exhibit small singlet-triplet energy splitting and high photoluminescence quantum yields, functioning as efficient deep-blue TADF emitters. The OLEDs utilizing these TADF emitters display bright blue electroluminescence with external quantum efficiencies of up to 20.4%, maximum current efficiencies of 41.7 cd A -1 , maximum power efficiencies of 37.2 lm W -1 , and color coordinates of (0.16, 0.23). The design strategy featuring such acridan-pyrimidine D-A motifs can offer great prospects for further developing high-performance deep-blue TADF emitters and TADF-OLEDs.

Benchmarking of measurement and simulation of transverse rms-emittance growth

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jeon, Dong-O

2008-01-01

Transverse emittance growth along the Alvarez DTL section is a major concern with respect to the preservation of beam quality of high current beams at the GSI UNILAC. In order to define measures to reduce this growth appropriated tools to simulate the beam dynamics are indispensable. This paper is about the benchmarking of three beam dynamics simulation codes, i.e. DYNAMION, PARMILA, and PARTRAN against systematic measurements of beam emittances for different machine settings. Experimental set-ups, data reduction, the preparation of the simulations, and the evaluation of the simulations will be described. It was found that the measured 100%-rmsemittances behind themore » DTL exceed the simulated values. Comparing measured 90%-rms-emittances to the simulated 95%-rms-emittances gives fair to good agreement instead. The sum of horizontal and vertical emittances is even described well by the codes as long as experimental 90%-rmsemittances are compared to simulated 95%-rms-emittances. Finally, the successful reduction of transverse emittance growth by systematic beam matching is reported.« less

Development of an ultra-high temperature infrared scene projector at Santa Barbara Infrared Inc.

NASA Astrophysics Data System (ADS)

Franks, Greg; Laveigne, Joe; Danielson, Tom; McHugh, Steve; Lannon, John; Goodwin, Scott

2015-05-01

The rapid development of very-large format infrared detector arrays has challenged the IR scene projector community to develop correspondingly larger-format infrared emitter arrays to support the testing needs of systems incorporating these detectors. As with most integrated circuits, fabrication yields for the read-in integrated circuit (RIIC) that drives the emitter pixel array are expected to drop dramatically with increasing size, making monolithic RIICs larger than the current 1024x1024 format impractical and unaffordable. Additionally, many scene projector users require much higher simulated temperatures than current technology can generate to fully evaluate the performance of their systems and associated processing algorithms. Under the Ultra High Temperature (UHT) development program, Santa Barbara Infrared Inc. (SBIR) is developing a new infrared scene projector architecture capable of producing both very large format (>1024x1024) resistive emitter arrays and improved emitter pixel technology capable of simulating very high apparent temperatures. During an earlier phase of the program, SBIR demonstrated materials with MWIR apparent temperatures in excess of 1000K. New emitter materials have subsequently been selected to produce pixels that achieve even higher apparent temperatures. Test results from pixels fabricated using the new material set will be presented and discussed. Also in development under the same UHT program is a 'scalable' RIIC that will be used to drive the high temperature pixels. This RIIC will utilize through-silicon vias (TSVs) and quilt packaging (QP) technologies to allow seamless tiling of multiple chips to fabricate very large arrays, and thus overcome the inherent yield limitations of very-large-scale integrated circuits. Current status of the RIIC development effort will also be presented.

Understanding and development of manufacturable screen-printed contacts on high sheet-resistance emitters for low-cost silicon solar cells

NASA Astrophysics Data System (ADS)

Hilali, Mohamed M.

2005-11-01

A simple cost-effective approach was proposed and successfully employed to fabricate high-quality screen-printed (SP) contacts to high sheet-resistance emitters (100 O/sq) to improve the Si solar cell efficiency. Device modeling was used to quantify the performance enhancement possible from the high sheet-resistance emitter for various cell designs. It was found that for performance enhancement from the high sheet-resistance emitter, certain cell design criteria must be satisfied. Model calculations showed that in order to achieve any performance enhancement over the conventional ˜40 O/sq emitter, the high sheet resistance emitter solar cell must have a reasonably good (<120,000 cm/s) or low front-surface recombination velocity (FSRV). Model calculations were also performed to establish requirements for high fill factors (FFs). The results showed that the series resistance should be less than 0.8 O-cm2, the shunt resistance should be greater than 1000 O-cm2, and the junction leakage current should be less than 25 nA/cm2. Analytical microscopy and surface analysis techniques were used to study the Ag-Si contact interface of different SP Ag pastes. Physical and electrical properties of SP Ag thick-film contacts were studied and correlated to understand and achieve good-quality ohmic contacts to high sheet-resistance emitters for solar cells. This information was then used to define the criteria for high-quality screen-printed contacts. The role of paste constituents and firing scheme on contact quality were investigated to tailor the high-quality screen-printed contact interface structure that results in high performance solar cells. Results indicated that small particle size, high glass transition temperature, rapid firing and less aggressive glass frit help in producing high-quality contacts. Based on these results high-quality SP contacts with high FFs > 0.78 on high sheet-resistance emitters were achieved for the first time using a simple single-step firing process. This technology was applied to different substrates (monocrystalline and multicrystalline) and surfaces (textured and planar). Cell efficiencies of ˜16.2% on low-cost EFG ribbon substrates were achieved on high sheet-resistance emitters with SP contacts. A record high-efficiency SP solar cell of 19% with textured high sheet-resistance emitter was also fabricated and modeled.

An integrated circuit switch

NASA Technical Reports Server (NTRS)

Bonin, E. L.

1969-01-01

Multi-chip integrated circuit switch consists of a GaAs photon-emitting diode in close proximity with S1 phototransistor. A high current gain is obtained when the transistor has a high forward common-emitter current gain.

Carbon Nanotube Field Emitters Synthesized on Metal Alloy Substrate by PECVD for Customized Compact Field Emission Devices to Be Used in X-Ray Source Applications.

PubMed

Park, Sangjun; Gupta, Amar Prasad; Yeo, Seung Jun; Jung, Jaeik; Paik, Sang Hyun; Mativenga, Mallory; Kim, Seung Hoon; Shin, Ji Hoon; Ahn, Jeung Sun; Ryu, Jehwang

2018-05-29

In this study, a simple, efficient, and economical process is reported for the direct synthesis of carbon nanotube (CNT) field emitters on metal alloy. Given that CNT field emitters can be customized with ease for compact and cold field emission devices, they are promising replacements for thermionic emitters in widely accessible X-ray source electron guns. High performance CNT emitter samples were prepared in optimized plasma conditions through the plasma-enhanced chemical vapor deposition (PECVD) process and subsequently characterized by using a scanning electron microscope, tunneling electron microscope, and Raman spectroscopy. For the cathode current, field emission (FE) characteristics with respective turn on (1 μA/cm²) and threshold (1 mA/cm²) field of 2.84 and 4.05 V/μm were obtained. For a field of 5.24 V/μm, maximum current density of 7 mA/cm² was achieved and a field enhancement factor β of 2838 was calculated. In addition, the CNT emitters sustained a current density of 6.7 mA/cm² for 420 min under a field of 5.2 V/μm, confirming good operational stability. Finally, an X-ray generated image of an integrated circuit was taken using the compact field emission device developed herein.

Combustor design tool for a gas fired thermophotovoltaic energy converter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lindler, K.W.; Harper, M.J.

1995-12-31

Recently, there has been a renewed interest in thermophotovoltaic (TPV) energy conversion. A TPV device converts radiant energy from a high temperature incandescent emitter directly into electricity by photovoltaic cells. The current Department of Energy sponsored research involves the design, construction and demonstration of a prototype TPV converter that uses a hydrocarbon fuel (such as natural gas) as the energy source. As the photovoltaic cells are designed to efficiently convert radiant energy at a prescribed wavelength, it is important that the temperature of the emitter be nearly constant over its entire surface. The U. S. Naval Academy has been taskedmore » with the development of a small emitter (with a high emissivity) that can be maintained at 1756 K (2700 F). This paper describes the computer spreadsheet model that was developed as a tool to be used for the design of the high temperature emitter.« less

Recent progress in nanostructured next-generation field emission devices

NASA Astrophysics Data System (ADS)

Mittal, Gaurav; Lahiri, Indranil

2014-08-01

Field emission has been known to mankind for more than a century, and extensive research in this field for the last 40-50 years has led to development of exciting applications such as electron sources, miniature x-ray devices, display materials, etc. In the last decade, large-area field emitters were projected as an important material to revolutionize healthcare and medical devices, and space research. With the advent of nanotechnology and advancements related to carbon nanotubes, field emitters are demonstrating highly enhanced performance and novel applications. Next-generation emitters need ultra-high emission current density, high brightness, excellent stability and reproducible performance. Novel design considerations and application of new materials can lead to achievement of these capabilities. This article presents an overview of recent developments in this field and their effects on improved performance of field emitters. These advancements are demonstrated to hold great potential for application in next-generation field emission devices.

Modeling of Diamond Field-Emitter-Arrays for high brightness photocathode applications

NASA Astrophysics Data System (ADS)

Kwan, Thomas; Huang, Chengkun; Piryatinski, Andrei; Lewellen, John; Nichols, Kimberly; Choi, Bo; Pavlenko, Vitaly; Shchegolkov, Dmitry; Nguyen, Dinh; Andrews, Heather; Simakov, Evgenya

2017-10-01

We propose to employ Diamond Field-Emitter-Arrays (DFEAs) as high-current-density ultra-low-emittance photocathodes for compact laser-driven dielectric accelerators capable of generating ultra-high brightness electron beams for advanced applications. We develop a semi-classical Monte-Carlo photoemission model for DFEAs that includes carriers' transport to the emitter surface and tunneling through the surface under external fields. The model accounts for the electronic structure size quantization affecting the transport and tunneling process within the sharp diamond tips. We compare this first principle model with other field emission models, such as the Child-Langmuir and Murphy-Good models. By further including effects of carrier photoexcitation, we perform simulations of the DFEAs' photoemission quantum yield and the emitted electron beam. Details of the theoretical model and validation against preliminary experimental data will be presented. Work ssupported by LDRD program at LANL.

Hybrid permeable metal-base transistor with large common-emitter current gain and low operational voltage.

PubMed

Feng, Chengang; Yi, Mingdong; Yu, Shunyang; Hümmelgen, Ivo A; Zhang, Tong; Ma, Dongge

2008-04-01

We demonstrate the suitability of N,N'-diphenyl-N,N'-bis(1-naphthylphenyl)-1,1'-biphenyl-4,4'-diamine (NPB), an organic semiconductor widely used in organic light-emitting diodes (OLEDs), for high-gain, low operational voltage nanostructured vertical-architecture transistors, which operate as permeable-base transistors. By introducing vanadium oxide (V2O5) between the injecting metal and NPB layer at the transistor emitter, we reduced the emitter operational voltage. The addition of two Ca layers, leading to a Ca/Ag/Ca base, allowed to obtain a large value of common-emitter current gain, but still retaining the permeable-base transistor character. This kind of vertical devices produced by simple technologies offer attractive new possibilities due to the large variety of available molecular semiconductors, opening the possibility of incorporating new functionalities in silicon-based devices.

Thermionic gas switch

DOEpatents

Hatch, George L.; Brummond, William A.; Barrus, Donald M.

1986-01-01

A temperature responsive thermionic gas switch having folded electron emitting surfaces. An ionizable gas is located between the emitter and an interior surface of a collector, coaxial with the emitter. In response to the temperature exceeding a predetermined level, sufficient electrons are derived from the emitter to cause the gas in the gap between the emitter and collector to become ionized, whereby a very large increase in current in the gap occurs. Due to the folded emitter surface area of the switch, increasing the "on/off" current ratio and adjusting the "on" current capacity is accomplished.

A comparison of etched-geometry and overgrown silicon permeable base transistors by two-dimensional numerical simulations

NASA Astrophysics Data System (ADS)

Vojak, B. A.; Alley, G. D.

1983-08-01

Two-dimensional numerical simulations are used to compare etched geometry and overgrown Si permeable base transistors (PTBs), considering both the etched collector and etched emitter biasing conditions made possible by the asymmetry of the etched structure. In PTB devices, the two-dimensional nature of the depletion region near the Schottky contact base grating results in a smaller electron barrier and, therefore, a larger collector current in the etched than in the overgrown structure. The parasitic feedback effects which result at high base-to-emitter bias levels lead to a deviation from the square-law behavior found in the collector characteristics of the overgrown PBT. These structures also have lower device capacitances and smaller transconductances at high base-to-emitter voltages. As a result, overgrown and etched structures have comparable predicted maximum values of the small signal unity short-circuit current gain frequency and maximum oscillation frequency.

Variable Emittance Electrochromics Using Ionic Electrolytes and Low Solar Absorptance Coatings

NASA Technical Reports Server (NTRS)

Chandrasekhar, Prasanna

2011-01-01

One of the last remaining technical hurdles with variable emittance devices or skins based on conducting polymer electrochromics is the high solar absorptance of their top surfaces. This high solar absorptance causes overheating of the skin when facing the Sun in space. Existing technologies such as mechanical louvers or loop heat pipes are virtually inapplicable to micro (< 20 kg) and nano (< 5 kg) spacecraft. Novel coatings lower the solar absorption to Alpha(s) of between 0.30 and 0.46. Coupled with the emittance properties of the variable emittance skins, this lowers the surface temperature of the skins facing the Sun to between 30 and 60 C, which is much lower than previous results of 100 C, and is well within acceptable satellite operations ranges. The performance of this technology is better than that of current new technologies such as microelectromechanical systems (MEMS), electrostatics, and electrophoretics, especially in applications involving micro and nano spacecraft. The coatings are deposited inside a high vacuum, layering multiple coatings onto the top surfaces of variable emittance skins. They are completely transparent in the entire relevant infrared region (about 2 to 45 microns), but highly reflective in the visible-NIR (near infrared) region of relevance to solar absorptance.

Solid-state current transformer

NASA Technical Reports Server (NTRS)

Farnsworth, D. L. (Inventor)

1976-01-01

A signal transformation network which is uniquely characterized to exhibit a very low input impedance while maintaining a linear transfer characteristic when driven from a voltage source and when quiescently biased in the low microampere current range is described. In its simplest form, it consists of a tightly coupled two transistor network in which a common emitter input stage is interconnected directly with an emitter follower stage to provide virtually 100 percent negative feedback to the base input of the common emitter stage. Bias to the network is supplied via the common tie point of the common emitter stage collector terminal and the emitter follower base stage terminal by a regulated constant current source, and the output of the circuit is taken from the collector of the emitter follower stage.

Establishment of design space for high current gain in III-N hot electron transistors

NASA Astrophysics Data System (ADS)

Gupta, Geetak; Ahmadi, Elaheh; Suntrup, Donald J., III; Mishra, Umesh K.

2018-01-01

This paper establishes the design space of III-N hot electron transistors (HETs) for high current gain by designing and fabricating HETs with scaled base thickness. The device structure consists of GaN-based emitter, base and collector regions where emitter and collector barriers are implemented using AlN and InGaN layers, respectively, as polarization-dipoles. Electrons tunnel through the AlN layer to be injected into the base at a high energy where they travel in a quasi-ballistic manner before being collected. Current gain increases from 1 to 3.5 when base thickness is reduced from 7 to 4 nm. The extracted mean free path (λ mfp) is 5.8 nm at estimated injection energy of 1.5 eV.

Emittance measurements in Grumman 1 MeV beamline

DOE Office of Scientific and Technical Information (OSTI.GOV)

Debiak, T.; Gammel, G.; Melnychuk, S.

1992-12-01

The emittance of a 30 keV H{sup {minus}} beam has been measured with an Allison type electrostatic analyser at two positions separated by 85 cm along the Grumman 1 MeV beamline LEBT at low currents (about 4 mA, no Cs{sub 2}O additive in the source) and at higher currents (10-15 mA, with Cs{sub 2}O additive in the source). No emittance growth was observed between the two positions, but, at the higher current level, the emittance was about 60% higher than at the low current level ({Sigma}{sub n},rms = .0045 {pi} cm-mrad vs. 0070 {pi} cm-mrad). Argon was then introduced upmore » to a partial pressure of 4x10{sup {minus}5} torr, and the emittance decreased back to a range corresponding to that found at the lower currents. However, beam noise was observed at the downstream position, and there is evidence for a small amount of emittance growth (<20%) between the two positions.« less

Boundary conditions on the plasma emitter surface in the presence of a particle counter flow: I. Ion emitter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Astrelin, V. T., E-mail: V.T.Astrelin@inp.nsk.su; Kotelnikov, I. A.

Emission of positively charged ions from a plasma emitter irradiated by a counterpropagating electron beam is studied theoretically. A bipolar diode with a plasma emitter in which the ion temperature is lower than the electron temperature and the counter electron flow is extracted from the ion collector is calculated in the one-dimensional model. An analog of Bohm’s criterion for ion emission in the presence of a counterpropagating electron beam is derived. The limiting density of the counterpropagating beam in a bipolar diode operating in the space-charge-limited-emission regime is calculated. The full set of boundary conditions on the plasma emitter surfacemore » that are required for operation of the high-current optics module in numerical codes used to simulate charged particle sources is formulated.« less

Bi-alkali antimonide photocathode growth: An X-ray diffraction study

DOE PAGES

Schubert, Susanne; Wong, Jared; Feng, Jun; ...

2016-07-21

Bi-alkali antimonide photocathodes are one of the best known sources of electrons for high current and/or high bunch charge applications like Energy Recovery Linacs or Free Electron Lasers. Despite their high quantum efficiency in visible light and low intrinsic emittance, the surface roughness of these photocathodes prohibits their use as low emittance cathodes in high accelerating gradient superconducting and normal conducting radio frequency photoguns and limits the minimum possible intrinsic emittance near the threshold. Also, the growth process for these materials is largely based on recipes obtained by trial and error and is very unreliable. In this paper, using X-raymore » diffraction, we investigate the different structural and chemical changes that take place during the growth process of the bi-alkali antimonide material K 2 CsSb. Our measurements give us a deeper understanding of the growth process of alkali-antimonide photocathodes allowing us to optimize it with the goal of minimizing the surface roughness to preserve the intrinsic emittance at high electric fields and increasing its reproducibility.« less

Compact Rare Earth Emitter Hollow Cathode

NASA Technical Reports Server (NTRS)

Watkins, Ronald; Goebel, Dan; Hofer, Richard

2010-01-01

A compact, high-current, hollow cathode utilizing a lanthanum hexaboride (LaB6) thermionic electron emitter has been developed for use with high-power Hall thrusters and ion thrusters. LaB6 cathodes are being investigated due to their long life, high current capabilities, and less stringent xenon purity and handling requirements compared to conventional barium oxide (BaO) dispenser cathodes. The new cathode features a much smaller diameter than previously developed versions that permit it to be mounted on axis of a Hall thruster ( internally mounted ), as opposed to the conventional side-mount position external to the outer magnetic circuit ("externally mounted"). The cathode has also been reconfigured to be capable of surviving vibrational loads during launch and is designed to solve the significant heater and materials compatibility problems associated with the use of this emitter material. This has been accomplished in a compact design with the capability of high-emission current (10 to 60 A). The compact, high-current design has a keeper diameter that allows the cathode to be mounted on the centerline of a 6- kW Hall thruster, inside the iron core of the inner electromagnetic coil. Although designed for electric propulsion thrusters in spacecraft station- keeping, orbit transfer, and interplanetary applications, the LaB6 cathodes are applicable to the plasma processing industry in applications such as optical coatings and semiconductor processing where reactive gases are used. Where current electrical propulsion thrusters with BaO emitters have limited life and need extremely clean propellant feed systems at a significant cost, these LaB6 cathodes can run on the crudest-grade xenon propellant available without impact. Moreover, in a laboratory environment, LaB6 cathodes reduce testing costs because they do not require extended conditioning periods under hard vacuum. Alternative rare earth emitters, such as cerium hexaboride (CeB6) can be used in this configuration with possibly an even longer emitter life. This cathode is specifically designed to integrate on the centerline of a high-power Hall thruster, thus eliminating the asymmetries in the plasma discharge common to cathodes previously mounted externally to the thruster s magnetic circuit. An alternative configuration for the cathode uses an external propellant feed. This diverts a fraction of the total cathode flow to an external feed, which can improve the cathode coupling efficiency at lower total mass flow rates. This can improve the overall thruster efficiency, thereby decreasing the required propellant loads for different missions. Depending on the particular mission, reductions in propellant loads can lead to mission enabling capabilities by allowing launch vehicle step-down, greater payload capability, or by extending the life of a spacecraft.

Source brightness and useful beam current of carbon nanotubes and other very small emitters

NASA Astrophysics Data System (ADS)

Kruit, P.; Bezuijen, M.; Barth, J. E.

2006-01-01

The potential application of carbon nanotubes as electron sources in electron microscopes is analyzed. The resolution and probe current that can be obtained from a carbon nanotube emitter in a low-voltage scanning electron microscope are calculated and compared to the state of the art using Schottky electron sources. Many analytical equations for probe-size versus probe-current relations in different parameter regimes are obtained. It is shown that for most carbon nanotube emitters, the gun lens aberrations are larger than the emitters' virtual source size and thus restrict the microscope's performance. The result is that the advantages of the higher brightness of nanotube emitters are limited unless the angular emission current is increased over present day values or the gun lens aberrations are decreased. For some nanotubes with a closed cap, it is known that the emitted electron beam is coherent over the full emission cone. We argue that for such emitters the parameter ``brightness'' becomes meaningless. The influence of phase variations in the electron wave front emitted from such a nanotube emitter on the focusing of the electron beam is analyzed.

Highly stable field emission from ZnO nanowire field emitters controlled by an amorphous indium–gallium–zinc-oxide thin film transistor

NASA Astrophysics Data System (ADS)

Li, Xiaojie; Wang, Ying; Zhang, Zhipeng; Ou, Hai; She, Juncong; Deng, Shaozhi; Xu, Ningsheng; Chen, Jun

2018-04-01

Lowering the driving voltage and improving the stability of nanowire field emitters are essential for them to be applied in devices. In this study the characteristics of zinc oxide (ZnO) nanowire field emitter arrays (FEAs) controlled by an amorphous indium–gallium–zinc-oxide thin film transistor (a-IGZO TFT) were studied. A low driving voltage along with stabilization of the field emission current were achieved. Modulation of field emission currents up to three orders of magnitude was achieved at a gate voltage of 0–32 V for a constant anode voltage. Additionally, a-IGZO TFT control can dramatically reduce the emission current fluctuation (i.e., from 46.11 to 1.79% at an emission current of ∼3.7 µA). Both the a-IGZO TFT and ZnO nanowire FEAs were prepared on glass substrates in our research, demonstrating the feasibility of realizing large area a-IGZO TFT-controlled ZnO nanowire FEAs.

Heavy doping effects in high efficiency silicon solar cells

NASA Technical Reports Server (NTRS)

Lindholm, F. A.; Neugroschel, A.

1986-01-01

The temperature dependence of the emitter saturation current for bipolar devices was studied by varying the surface recombination velocity at the emitter surface. From this dependence, the value was derived for bandgap narrowing that is in better agreement with other determinations that were obtained from the temperature dependence measure on devices with ohmic contacts. Results of the first direct measurement of the minority-carrier transit time in a transparent heavily doped emitter layer were reported. The value was obtained by a high-frequency conductance method recently developed and used for doped Si. Experimental evidence is presented for significantly greater charge storage in highly excited silicon near room temperature than conventional theory would predict. These data are compared with various data for delta E sub G in heavily doped silicon.

Comparison of Boron diffused emitters from BN, BSoD and H3BO3 dopants

NASA Astrophysics Data System (ADS)

Singha, Bandana; Singh Solanki, Chetan

2016-12-01

In this work, we are comparing different limited boron dopant sources for the emitter formation in n-type c-Si solar cells. High purity boric acid solution, commercially available boron spin on dopant and boron nitride solid source are used for comparison of emitter doping profiles for the same time and temperature conditions of diffusion. The characterizations done for the similar sheet resistance values for all the dopant sources show different surface morphologies and different device parameters. The measured emitter saturation current densities (Joe) are more than 20 fA cm-2 for all the dopant sources. The bulk carrier lifetimes measured for different diffusion conditions and different solar cell parameters for the similar sheet resistance values show the best result for boric acid diffusion and the least for BN solid source. So, different dopant sources result in different emitter and cell performances.

Field emission electron source

DOEpatents

Zettl, Alexander Karlwalter; Cohen, Marvin Lou

2000-01-01

A novel field emitter material, field emission electron source, and commercially feasible fabrication method is described. The inventive field emission electron source produces reliable electron currents of up to 400 mA/cm.sup.2 at 200 volts. The emitter is robust and the current it produces is not sensitive to variability of vacuum or the distance between the emitter tip and the cathode. The novel emitter has a sharp turn-on near 100 volts.

Current-voltage characteristics of carbon nanostructured field emitters in different power supply modes

NASA Astrophysics Data System (ADS)

Popov, E. O.; Kolosko, A. G.; Filippov, S. V.; Romanov, P. A.; Terukov, E. I.; Shchegolkov, A. V.; Tkachev, A. G.

2017-12-01

We received and compared the current-voltage characteristics of large-area field emitters based on nanocomposites with graphene and nanotubes. The characteristics were measured in two high voltage scanning modes: the "slow" and the "fast". Correlation between two types of hysteresis observed in these regimes was determined. Conditions for transition from "reverse" hysteresis to the "direct" one were experimentally defined. Analysis of the eight-shaped hysteresis was provided with calculation of the effective emission parameters. The phenomenological model of adsorption-desorption processes in the field emission system was proposed.

Microelectrode for energy and current control of nanotip field electron emitters

NASA Astrophysics Data System (ADS)

Lüneburg, S.; Müller, M.; Paarmann, A.; Ernstorfer, R.

2013-11-01

Emerging experiments and applications in electron microscopy, holography, and diffraction benefit from miniaturized electron guns for compact experimental setups. We present a highly compact microelectrode integrated field emitter that consists of a tungsten nanotip coated with a few micrometers thick polyimide film followed by a several nanometers thick gold film, both positioned behind the exposed emitter apex by approximately 10-30 μm. The control of the electric field strength at the nanometer scale tip apex allows suppression, extraction, and energy tuning of field-emitted electrons. The performance of the microelectrode is demonstrated experimentally and supported by numerical simulations.

Terahertz emission from ultrafast spin-charge current at a Rashba interface

NASA Astrophysics Data System (ADS)

Zhang, Qi; Jungfleisch, Matthias Benjamin; Zhang, Wei; Pearson, John E.; Wen, Haidan; Hoffmann, Axel

Ultrafast broadband terahertz (THz) radiation is highly desired in various fields from fundamental research in condensed matter physics to bio-chemical detection. Conventional ultrafast THz sources rely on either nonlinear optical effects or ultrafast charge currents in semiconductors. Recently, however, it was realized that ultrabroad-band THz radiation can be produced highly effectively by novel spintronics-based emitters that also make use of the electron's spin degree of freedom. Those THz-emitters convert a spin current flow into a terahertz electromagnetic pulse via the inverse spin-Hall effect. In contrast to this bulk conversion process, we demonstrate here that a femtosecond spin current pulse launched from a CoFeB layer can also generate terahertz transients efficiently at a two-dimensional Rashba interface between two non-magnetic materials, i.e., Ag/Bi. Those interfaces have been proven to be efficient means for spin- and charge current interconversion.

Demonstration of Current Profile Shaping using Double Dog-Leg Emittance Exchange Beam Line at Argonne Wakefield Accelerator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ha, Gwanghui; Cho, Moo-Hyun; Conde, Manoel

Emittance exchange (EEX) based longitudinal current profile shaping is the one of the promising current profile shaping technique. This method can generate high quality arbitrary current profiles under the ideal conditions. The double dog-leg EEX beam line was recently installed at the Argonne Wakefield Accelerator (AWA) to explore the shaping capability and confirm the quality of this method. To demonstrate the arbitrary current profile generation, several different transverse masks are applied to generate different final current profiles. The phase space slopes and the charge of incoming beam are varied to observe and suppress the aberrations on the ideal profile. Wemore » present current profile shaping results, aberrations on the shaped profile, and its suppression.« less

A read-in IC for infrared scene projectors with voltage drop compensation for improved uniformity of emitter current

NASA Astrophysics Data System (ADS)

Cho, Min Ji; Shin, Uisub; Lee, Hee Chul

2017-05-01

This paper proposes a read-in integrated circuit (RIIC) for infrared scene projectors, which compensates for the voltage drops in ground lines in order to improve the uniformity of the emitter current. A current output digital-to-analog converter is utilized to convert digital scene data into scene data currents. The unit cells in the array receive the scene data current and convert it into data voltage, which simultaneously self-adjusts to account for the voltage drop in the ground line in order to generate the desired emitter current independently of variations in the ground voltage. A 32 × 32 RIIC unit cell array was designed and fabricated using a 0.18-μm CMOS process. The experimental results demonstrate that the proposed RIIC can output a maximum emitter current of 150 μA and compensate for a voltage drop in the ground line of up to 500 mV under a 3.3-V supply. The uniformity of the emitter current is significantly improved compared to that of a conventional RIIC.

High-temperature, high-power-density thermionic energy conversion for space

NASA Technical Reports Server (NTRS)

Morris, J. F.

1977-01-01

Theoretic converter outputs and efficiencies indicate the need to consider thermionic energy conversion (TEC) with greater power densities and higher temperatures within reasonable limits for space missions. Converter-output power density, voltage, and efficiency as functions of current density were determined for 1400-to-2000 K emitters with 725-to-1000 K collectors. The results encourage utilization of TEC with hotter-than-1650 K emitters and greater-than-6W sq cm outputs to attain better efficiencies, greater voltages, and higher waste-heat-rejection temperatures for multihundred-kilowatt space-power applications. For example, 1800 K, 30 A sq cm TEC operation for NEP compared with the 1650 K, 5 A/sq cm case should allow much lower radiation weights, substantially fewer and/or smaller emitter heat pipes, significantly reduced reactor and shield-related weights, many fewer converters and associated current-collecting bus bars, less power conditioning, and lower transmission losses. Integration of these effects should yield considerably reduced NEP specific weights.

Transverse emittance-preserving arc compressor for high-brightness electron beam-based light sources and colliders

NASA Astrophysics Data System (ADS)

Di Mitri, S.; Cornacchia, M.

2015-03-01

Bunch length magnetic compression is used in high-brightness linacs driving free-electron lasers (FELs) and particle colliders to increase the peak current of the injected beam. To date, it is performed in dedicated insertions made of few degrees bending magnets and the compression factor is limited by the degradation of the beam transverse emittance owing to emission of coherent synchrotron radiation (CSR). We reformulate the known concept of CSR-driven optics balance for the general case of varying bunch length and demonstrate, through analytical and numerical results, that a 500 pC charge beam can be time-compressed in a periodic 180 deg arc at 2.4 GeV beam energy and lower, by a factor of up to 45, reaching peak currents of up to 2 kA and with a normalized emittance growth at the 0.1 μ \\text{m} rad level. The proposed solution offers new schemes of beam longitudinal gymnastics; an application to an energy recovery linac driving FEL is discussed.

Fabrication of Gate-Electrode Integrated Carbon-Nanotube Bundle Field Emitters

NASA Technical Reports Server (NTRS)

Toda, Risaku; Bronikowski, Michael; Luong, Edward; Manohara, Harish

2008-01-01

A continuing effort to develop carbon-nanotube-based field emitters (cold cathodes) as high-current-density electron sources has yielded an optimized device design and a fabrication scheme to implement the design. One major element of the device design is to use a planar array of bundles of carbon nanotubes as the field-emission tips and to optimize the critical dimensions of the array (principally, heights of bundles and distances between them) to obtain high area-averaged current density and high reliability over a long operational lifetime a concept that was discussed in more detail in Arrays of Bundles of Carbon Nanotubes as Field Emitters (NPO-40817), NASA Tech Briefs, Vol. 31, No. 2 (February 2007), page 58. Another major element of the design is to configure the gate electrodes (anodes used to extract, accelerate, and/or focus electrons) as a ring that overhangs a recess wherein the bundles of nanotubes are located, such that by virtue of the proximity between the ring and the bundles, a relatively low applied potential suffices to generate the large electric field needed for emission of electrons.

Field emission characteristics of a small number of carbon fiber emitters

NASA Astrophysics Data System (ADS)

Tang, Wilkin W.; Shiffler, Donald A.; Harris, John R.; Jensen, Kevin L.; Golby, Ken; LaCour, Matthew; Knowles, Tim

2016-09-01

This paper reports an experiment that studies the emission characteristics of small number of field emitters. The experiment consists of nine carbon fibers in a square configuration. Experimental results show that the emission characteristics depend strongly on the separation between each emitter, providing evidence of the electric field screening effects. Our results indicate that as the separation between the emitters decreases, the emission current for a given voltage also decreases. The authors compare the experimental results to four carbon fiber emitters in a linear and square configurations as well as to two carbon fiber emitters in a paired array. Voltage-current traces show that the turn-on voltage is always larger for the nine carbon fiber emitters as compared to the two and four emitters in linear configurations, and approximately identical to the four emitters in a square configuration. The observations and analysis reported here, based on Fowler-Nordheim field emission theory, suggest the electric field screening effect depends critically on the number of emitters, the separation between them, and their overall geometric configuration.

Experimental study of a high intensity radio-frequency cooler

NASA Astrophysics Data System (ADS)

Boussaid, Ramzi; Ban, G.; Cam, J. F.

2015-07-01

Within the framework of the DESIR/SPIRAL-2 project, a radio-frequency quadrupole cooler named SHIRaC has been studied. SHIRaC is a key device of SPIRAL-2, designed to enhance the beam quality required by DESIR. The preliminary study and development of this device has been carried out at Laboratoire de Physique Corpusculaire de CAEN (LPC Caen), France. The goal of this paper is to present the experimental studies conducted on a SHIRaC prototype. The main peculiarity of this cooler is its efficient handling and cooling of ion beams with currents going up as high as 1 μ A which has never before been achieved in any of the previous coolers. Much effort has been made lately into these studies for development of appropriate optics, vacuum and rf systems which allow cooling of beams of large emittance (˜80 π mm mrad ) and high current. The dependencies of SHIRaC's transmission and the cooled beam parameters in terms of geometrical transverse emittance and the longitudinal energy spread have also been discussed. Investigation of beam purity at optimum cooling condition has also been done. Results from the experiments indicate that an emittance reduction of less than 2.5 π mm mrad and a longitudinal energy spread reduction of less than 4 eV are obtained with more than 70% of ion transmission. The emittance is at expected values whereas the energy spread is not.

UNDULATOR-BASED LASER WAKEFIELD ACCELERATOR ELECTRON BEAM DIAGNOSTIC

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bakeman, M.S.; Fawley, W.M.; Leemans, W. P.

to couple the THUNDER undulator to the LOASIS Lawrence Berkeley National Laboratory (LBNL) laser wakefield accelerator (LWFA). Currently the LWFA has achieved quasi-monoenergetic electron beams with energies up to 1 GeV. These ultra-short, high-peak-current, electron beams are ideal for driving a compact XUV free electron laser (FEL). Understanding the electron beam properties such as the energy spread and emittance is critical for achieving high quality light sources with high brightness. By using an insertion device such as an undulator and observing changes in the spontaneous emission spectrum, the electron beam energy spread and emittance can be measured with high precision.more » The initial experiments will use spontaneous emission from 1.5 m of undulator. Later experiments will use up to 5 m of undulator with a goal of a high gain, XUV FEL.« less

Development of a pepper pot emittance probe and its application for ECR ion beam studies.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kondrashev, S.; Barcikowski, A.; Mustapha, B.

2009-07-21

A pepper pot-scintillator screen system has been developed and used to measure the emittance of DC ion beams extracted from a high-intensity permanent magnet ECR ion source. The system includes a fast beam shutter with a minimum dwell time of 18 ms to reduce the degradation of the CsI(Tl) scintillator by DC ion beam irradiation and a CCD camera with a variable shutter speed in the range of 1 {micro}s-65 s. On-line emittance measurements are performed by an application code developed on a LabVIEW platform. The sensitivity of the device is sufficient to measure the emittance of DC ion beamsmore » with current densities down to about 100 nA/cm{sup 2}. The emittance of all ion species extracted from the ECR ion source and post-accelerated to an energy of 75-90 keV/charge have been measured downstream of the LEBT. As the mass-to-charge ratio of ion species increases, the normalized RMS emittances in both transverse phase planes decrease from 0.5-1.0 {pi} mm mrad for light ions to 0.05-0.09 {pi} mm mrad for highly charged {sup 209}Bi ions. The dependence of the emittance on ion's mass-to-charge ratio follows very well the dependence expected from beam rotation induced by decreasing ECR axial magnetic field. The measured emittance values cannot be explained by only ion beam rotation for all ion species and the contribution to emittance of ion temperature in plasma, non-linear electric fields and non-linear space charge is comparable or even higher than the contribution of ion beam rotation.« less

Emission current formation in plasma electron emitters

NASA Astrophysics Data System (ADS)

Gruzdev, V. A.; Zalesski, V. G.

2010-12-01

A model of the plasma electron emitter is considered, in which the current redistribution over electrodes of the emitter gas-discharge structure and weak electric field formation in plasma are taken into account as functions of the emission current. The calculated and experimental dependences of the switching parameters, extraction efficiency, and strength of the electric field in plasma on the accelerating voltage and geometrical sizes of the emission channel are presented.

High-brightness 800nm fiber-coupled laser diodes

NASA Astrophysics Data System (ADS)

Berk, Yuri; Levy, Moshe; Rappaport, Noam; Tessler, Renana; Peleg, Ophir; Shamay, Moshe; Yanson, Dan; Klumel, Genadi; Dahan, Nir; Baskin, Ilya; Shkedi, Lior

2014-03-01

Fiber-coupled laser diodes have become essential sources for fiber laser pumping and direct energy applications. Single emitters offer reliable multi-watt output power from a 100 m lateral emission aperture. By their combination and fiber coupling, pump powers up to 100 W can be achieved from a low-NA fiber pigtail. Whilst in the 9xx nm spectral range the single emitter technology is very mature with <10W output per chip, at 800nm the reliable output power from a single emitter is limited to 4 W - 5 W. Consequently, commercially available fiber coupled modules only deliver 5W - 15W at around 800nm, almost an order of magnitude down from the 9xx range pumps. To bridge this gap, we report our advancement in the brightness and reliability of 800nm single emitters. By optimizing the wafer structure, laser cavity and facet passivation process we have demonstrated QCW device operation up to 19W limited by catastrophic optical damage to the 100 μm aperture. In CW operation, the devices reach 14 W output followed by a reversible thermal rollover and a complete device shutdown at high currents, with the performance fully rebounded after cooling. We also report the beam properties of our 800nm single emitters and provide a comparative analysis with the 9xx nm single emitter family. Pump modules integrating several of these emitters with a 105 μm / 0.15 NA delivery fiber reach 35W in CW at 808 nm. We discuss the key opto-mechanical parameters that will enable further brightness scaling of multi-emitter pump modules.

Stability of field emission current from porous n-GaAs(110)

NASA Astrophysics Data System (ADS)

Tondare, V. N.; Naddaf, M.; Bhise, A. B.; Bhoraskar, S. V.; Joag, D. S.; Mandale, A. B.; Sainkar, S. R.

2002-02-01

Field electron emission from porous GaAs has been investigated. The emitter was prepared by anodic etching of n-GaAs (110) in 0.1 M HCl solution. The as-etched porous GaAs shows nonlinear Fowler-Nordheim (FN) characteristics, with a low onset voltage. The emitter, after operating for 6 h at the residual gas pressure of 1×10-8 mbar, shows a linear FN characteristics with a relatively high onset voltage and poor field emission current stability as compared to the as-etched emitter. The change in the behavior was attributed to the residual gas ion bombardment during field electron emission. X-ray photoelectron spectroscopic investigations were carried out on as-etched sample and the one which was studied for field emission. The studies indicate that the as-etched surface contains As2O3 and the surface after field electron emission for about 6 h becomes gallium rich. The presence of As2O3 seems to be a desirable feature for the stable field emission current.

Investigations of the emittance and brightness of ion beams from an electron beam ion source of the Dresden EBIS type.

PubMed

Silze, Alexandra; Ritter, Erik; Zschornack, Günter; Schwan, Andreas; Ullmann, Falk

2010-02-01

We have characterized ion beams extracted from the Dresden EBIS-A, a compact room-temperature electron beam ion source (EBIS) with a permanent magnet system for electron beam compression, using a pepper-pot emittance meter. The EBIS-A is the precursor to the Dresden EBIS-SC in which the permanent magnets have been replaced by superconducting solenoids for the use of the source in high-ion-current applications such as heavy-ion cancer therapy. Beam emittance and brightness values were calculated from data sets acquired for a variety of source parameters, in leaky as well as pulsed ion extraction mode. With box shaped pulses of C(4+) ions at an energy of 39 keV root mean square emittances of 1-4 mm mrad and a brightness of 10 nA mm(-2) mrad(-2) were achieved. The results meet the expectations for high quality ion beams generated by an electron beam ion source.

Microelectrode for energy and current control of nanotip field electron emitters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lüneburg, S.; Müller, M., E-mail: m.mueller@fhi-berlin.mpg.de; Paarmann, A., E-mail: alexander.paarmann@fhi-berlin.mpg.de

2013-11-18

Emerging experiments and applications in electron microscopy, holography, and diffraction benefit from miniaturized electron guns for compact experimental setups. We present a highly compact microelectrode integrated field emitter that consists of a tungsten nanotip coated with a few micrometers thick polyimide film followed by a several nanometers thick gold film, both positioned behind the exposed emitter apex by approximately 10–30 μm. The control of the electric field strength at the nanometer scale tip apex allows suppression, extraction, and energy tuning of field-emitted electrons. The performance of the microelectrode is demonstrated experimentally and supported by numerical simulations.

Achieving ultra-high temperatures with a resistive emitter array

NASA Astrophysics Data System (ADS)

Danielson, Tom; Franks, Greg; Holmes, Nicholas; LaVeigne, Joe; Matis, Greg; McHugh, Steve; Norton, Dennis; Vengel, Tony; Lannon, John; Goodwin, Scott

2016-05-01

The rapid development of very-large format infrared detector arrays has challenged the IR scene projector community to also develop larger-format infrared emitter arrays to support the testing of systems incorporating these detectors. In addition to larger formats, many scene projector users require much higher simulated temperatures than can be generated with current technology in order to fully evaluate the performance of their systems and associated processing algorithms. Under the Ultra High Temperature (UHT) development program, Santa Barbara Infrared Inc. (SBIR) is developing a new infrared scene projector architecture capable of producing both very large format (>1024 x 1024) resistive emitter arrays and improved emitter pixel technology capable of simulating very high apparent temperatures. During earlier phases of the program, SBIR demonstrated materials with MWIR apparent temperatures in excess of 1400 K. New emitter materials have subsequently been selected to produce pixels that achieve even higher apparent temperatures. Test results from pixels fabricated using the new material set will be presented and discussed. A 'scalable' Read In Integrated Circuit (RIIC) is also being developed under the same UHT program to drive the high temperature pixels. This RIIC will utilize through-silicon via (TSV) and Quilt Packaging (QP) technologies to allow seamless tiling of multiple chips to fabricate very large arrays, and thus overcome the yield limitations inherent in large-scale integrated circuits. Results of design verification testing of the completed RIIC will be presented and discussed.

The gas phase emitter effect of lanthanum within ceramic metal halide lamps and its dependence on the La vapor pressure and operating frequency

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ruhrmann, C.; Hoebing, T.; Bergner, A.

2015-08-07

The gas phase emitter effect increases the lamp lifetime by lowering the work function and, with it, the temperature of the tungsten electrodes of metal halide lamps especially for lamps in ceramic vessels due to their high rare earth pressures. It is generated by a monolayer on the electrode surface of electropositive atoms of certain emitter elements, which are inserted into the lamp bulb by metal iodide salts. They are vaporized, dissociated, ionized, and deposited by an emitter ion current onto the electrode surface within the cathodic phase of lamp operation with a switched-dc or ac-current. The gas phase emittermore » effect of La and the influence of Na on the emitter effect of La are studied by spatially and phase-resolved pyrometric measurements of the electrode tip temperature, La atom, and ion densities by optical emission spectroscopy as well as optical broadband absorption spectroscopy and arc attachment images by short time photography. An addition of Na to the lamp filling increases the La vapor pressure within the lamp considerably, resulting in an improved gas phase emitter effect of La. Furthermore, the La vapor pressure is raised by a heating of the cold spot. In this way, conditions depending on the La vapor pressure and operating frequency are identified, at which the temperature of the electrodes becomes a minimum.« less

Measurement of ion species in high current ECR H⁺/D⁺ ion source for IFMIF (International Fusion Materials Irradiation Facility).

PubMed

Shinto, K; Senée, F; Ayala, J-M; Bolzon, B; Chauvin, N; Gobin, R; Ichimiya, R; Ihara, A; Ikeda, Y; Kasugai, A; Kitano, T; Kondo, K; Marqueta, A; Okumura, Y; Takahashi, H; Valette, M

2016-02-01

Ion species ratio of high current positive hydrogen/deuterium ion beams extracted from an electron-cyclotron-resonance ion source for International Fusion Materials Irradiation Facility accelerator was measured by the Doppler shift Balmer-α line spectroscopy. The proton (H(+)) ratio at the middle of the low energy beam transport reached 80% at the hydrogen ion beam extraction of 100 keV/160 mA and the deuteron (D(+)) ratio reached 75% at the deuterium ion beam extraction of 100 keV/113 mA. It is found that the H(+) ratio measured by the spectroscopy gives lower than that derived from the phase-space diagram measured by an Allison scanner type emittance monitor. The H(+)/D(+) ratio estimated by the emittance monitor was more than 90% at those extraction currents.

Emittance measurements of the CLIO electron beam

NASA Astrophysics Data System (ADS)

Chaput, R.; Devanz, G.; Joly, P.; Kergosien, B.; Lesrel, J.

1997-02-01

We have designed a setup to measure the transverse emittance at the CLIO accelerator exit, based on the "3 gradients" method. The beam transverse size is measured simply by scanning it with a steering coil across a fixed jaw and recording the transmitted current, at various quadrupole strengths. A code then performs a complete calculation of the emittance using the transfer matrix of the quadrupole instead of the usual classical lens approximation. We have studied the influence of various parameters on the emittance: Magnetic field on the e-gun and the peak current. We have also improved a little the emittance by replacing a mismatched pipe between the buncher and accelerating section to avoid wake-field effects; The resulting improvements of the emittance have led to an increase in the FEL emitted power.

High-temperature MIRAGE XL (LFRA) IRSP system development

NASA Astrophysics Data System (ADS)

McHugh, Steve; Franks, Greg; LaVeigne, Joe

2017-05-01

The development of very-large format infrared detector arrays has challenged the IR scene projector community to develop larger-format infrared emitter arrays. Many scene projector applications also require much higher simulated temperatures than can be generated with current technology. This paper will present an overview of resistive emitterbased (broadband) IR scene projector system development, as well as describe recent progress in emitter materials and pixel designs applicable for legacy MIRAGE XL Systems to achieve apparent temperatures >1000K in the MWIR. These new high temperature MIRAGE XL (LFRA) Digital Emitter Engines (DEE) will be "plug and play" equivalent with legacy MIRAGE XL DEEs, the rest of the system is reusable. Under the High Temperature Dynamic Resistive Array (HDRA) development program, Santa Barbara Infrared Inc. (SBIR) is developing a new infrared scene projector architecture capable of producing both very large format (>2k x 2k) resistive emitter arrays and improved emitter pixel technology capable of simulating very high apparent temperatures. During earlier phases of the program, SBIR demonstrated materials with MWIR apparent temperatures in excess of 1500 K. These new emitter materials can be utilized with legacy RIICs to produce pixels that can achieve 7X the radiance of the legacy systems with low cost and low risk. A 'scalable' Read-In Integrated Circuit (RIIC) is also being developed under the same HDRA program to drive the high temperature pixels. This RIIC will utilize through-silicon via (TSV) and Quilt Packaging (QP) technologies to allow seamless tiling of multiple chips to fabricate very large arrays, and thus overcome the yield limitations inherent in large-scale integrated circuits. These quilted arrays can be fabricated in any N x M size in 512 steps.

Voltage controlling mechanisms in low resistivity silicon solar cells: A unified approach

NASA Technical Reports Server (NTRS)

Weizer, V. G.; Swartz, C. K.; Hart, R. E.; Godlewski, M. P.

1984-01-01

An experimental technique capable of resolving the dark saturation current into its base and emitter components is used as the basis of an analysis in which the voltage limiting mechanisms were determined for a variety of high voltage, low resistivity silicon solar cells. The cells studied include the University of Florida hi-low emitter cell, the NASA and the COMSAT multi-step diffused cells, the Spire Corporation ion-implanted emitter cell, and the University of New South Wales MINMIS and MINP cells. The results proved to be, in general, at variance with prior expectations. Most surprising was the finding that the MINP and the MINMIS voltage improvements are due, to a considerable extent, to a previously unrecognized optimization of the base component of the saturation current. This result is substantiated by an independent analysis of the material used to fabricate these devices.

Voltage controlling mechanisms in low resistivity silicon solar cells - A unified approach

NASA Technical Reports Server (NTRS)

Weizer, V. G.; Swartz, C. K.; Hart, R. E.; Godlewski, M. P.

1984-01-01

An experimental technique capable of resolving the dark saturation current into its base and emitter components is used as the basis of an analysis in which the voltage limiting mechanisms were determined for a variety of high voltage, low resistivity silicon solar cells. The cells studied include the University of Florida hi-low emitter cell, the NASA and the COMSAT multi-step diffused cells, the Spire Corporation ion-implanted emitter cell, and the University of New South Wales MINMIS and MINP cells. The results proved to be, in general, at variance with prior expectations. Most surprising was the finding that the MINP and the MINMIS voltage improvements are due, to a considerable extent, to a previously unrecognized optimization of the base component of the saturation current. This result is substantiated by an independent analysis of the material used to fabricate these devices.

[Design of High Frequency Signal Detecting Circuit of Human Body Impedance Used for Ultrashort Wave Diathermy Apparatus].

PubMed

Fan, Xu; Wang, Yunguang; Cheng, Haiping; Chong, Xiaochen

2016-02-01

The present circuit was designed to apply to human tissue impedance tuning and matching device in ultra-short wave treatment equipment. In order to judge if the optimum status of circuit parameter between energy emitter circuit and accepter circuit is in well syntony, we designed a high frequency envelope detect circuit to coordinate with automatic adjust device of accepter circuit, which would achieve the function of human tissue impedance matching and tuning. Using the sampling coil to receive the signal of amplitude-modulated wave, we compared the voltage signal of envelope detect circuit with electric current of energy emitter circuit. The result of experimental study was that the signal, which was transformed by the envelope detect circuit, was stable and could be recognized by low speed Analog to Digital Converter (ADC) and was proportional to the electric current signal of energy emitter circuit. It could be concluded that the voltage, transformed by envelope detect circuit can mirror the real circuit state of syntony and realize the function of human tissue impedance collecting.

Theory and measurements of emittance preservation in plasma wakefield acceleration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Frederico, Joel

2016-12-01

In this dissertation, we examine the preservation and measurement of emittance in the plasma wakefield acceleration blowout regime. Plasma wakefield acceleration (PWFA) is a revolutionary approach to accelerating charged particles that has been demonstrated to have the potential for gradients orders of magnitude greater than traditional approaches. The application of PWFA to the design of a linear collider will make new high energy physics research possible, but the design parameters must first be shown to be competitive with traditional methods. Emittance preservation is necessary in the design of a linear collider in order to maximize luminosity. We examine the conditionsmore » necessary for circular symmetry in the PWFA blowout regime, and demonstrate that current proposals meet these bounds. We also present an application of beam lamentation which describes the process of beam parameter and emittance matching. We show that the emittance growth saturates as a consequence of energy spread in the beam. The initial beam parameters determine the amount of emittance growth, while the contribution of energy spread is negligible. We also present a model for ion motion in the presence of a beam that is much more dense than the plasma. By combining the model of ion motion and emittance growth, we find the emittance growth due to ion motion is minimal in the case of marginal ion motion. In addition, we present a simulation that validates the ion motion model, which is under further development to examine emittance growth of both marginal and pronounced ion motion. Finally, we present a proof-of-concept of an emittance measurement which may enable the analysis of emittance preservation in future PWFA experiments.« less

High quality ultrafast transmission electron microscopy using resonant microwave cavities.

PubMed

Verhoeven, W; van Rens, J F M; Kieft, E R; Mutsaers, P H A; Luiten, O J

2018-05-01

Ultrashort, low-emittance electron pulses can be created at a high repetition rate by using a TM 110 deflection cavity to sweep a continuous beam across an aperture. These pulses can be used for time-resolved electron microscopy with atomic spatial and temporal resolution at relatively large average currents. In order to demonstrate this, a cavity has been inserted in a transmission electron microscope, and picosecond pulses have been created. No significant increase of either emittance or energy spread has been measured for these pulses. At a peak current of 814 ± 2 pA, the root-mean-square transverse normalized emittance of the electron pulses is ɛ n,x =(2.7±0.1)·10 -12  m rad in the direction parallel to the streak of the cavity, and ɛ n,y =(2.5±0.1)·10 -12  m rad in the perpendicular direction for pulses with a pulse length of 1.1-1.3 ps. Under the same conditions, the emittance of the continuous beam is ɛ n,x =ɛ n,y =(2.5±0.1)·10 -12  m rad. Furthermore, for both the pulsed and the continuous beam a full width at half maximum energy spread of 0.95 ± 0.05 eV has been measured. Copyright © 2018 Elsevier B.V. All rights reserved.

Efficient, deep-blue TADF-emitters for OLED display applications (Conference Presentation)

NASA Astrophysics Data System (ADS)

Volz, Daniel; Baumann, Thomas

2016-09-01

Currently, the mobile display market is strongly shifting towards AMOLED technology, in order to enable curved and flexible displays. This leads to a growing demand for highly efficient OLED emitters to reduce the power consumption and increase display resolution at the same time. While highly efficient green and red OLEDs already found their place in commercial OLED-displays, the lack of efficient blue emitters is still an issue. Consequently, the active area for blue is considerably larger than for green and red pixels, to make up for the lower efficiency. We intend to close this efficiency-gap with novel emitters based on thermally activated delayed fluorescence (TADF) technology. Compared to state-of-the-art fluorescent dopants, the efficiency of TADF-emitters is up to four times higher. At the same time, it is possible to design them in a way to maintain deep blue emission, i.e. CIE y < 0.2. These aspects are relevant to produce efficient high resolution AMOLED displays. Apart from these direct customer benefits, our TADF technology does not contain any rare elements, which allows for the fabrication of sustainable OLED technology. In this work, we highlight one of our recently developed blue TADF materials. Basic material properties as well as first device results are discussed. In a bottom-emitting device, a CIEx/CIEy coordinate of (0.16/0.17) was achieved with efficiency values close to 20% EQE.

Studies in High Current Density Ion Sources for Heavy Ion Fusion Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chacon-Golcher, Edwin

This dissertation develops diverse research on small (diameter ~ few mm), high current density (J ~ several tens of mA/cm 2) heavy ion sources. The research has been developed in the context of a programmatic interest within the Heavy Ion Fusion (HIF) Program to explore alternative architectures in the beam injection systems that use the merging of small, bright beams. An ion gun was designed and built for these experiments. Results of average current density yield () at different operating conditions are presented for K + and Cs + contact ionization sources and potassium aluminum silicate sources. Maximum valuesmore » for a K + beam of ~90 mA/cm 2 were observed in 2.3 μs pulses. Measurements of beam intensity profiles and emittances are included. Measurements of neutral particle desorption are presented at different operating conditions which lead to a better understanding of the underlying atomic diffusion processes that determine the lifetime of the emitter. Estimates of diffusion times consistent with measurements are presented, as well as estimates of maximum repetition rates achievable. Diverse studies performed on the composition and preparation of alkali aluminosilicate ion sources are also presented. In addition, this work includes preliminary work carried out exploring the viability of an argon plasma ion source and a bismuth metal vapor vacuum arc (MEVVA) ion source. For the former ion source, fast rise-times (~ 1 μs), high current densities (~ 100 mA/cm +) and low operating pressures (< 2 mtorr) were verified. For the latter, high but acceptable levels of beam emittance were measured (ε n ≤ 0.006 π· mm · mrad) although measured currents differed from the desired ones (I ~ 5mA) by about a factor of 10.« less

Diagnostic for a high-repetition rate electron photo-gun and first measurements

NASA Astrophysics Data System (ADS)

Filippetto, D.; Doolittle, L.; Huang, G.; Norum, E.; Portmann, G.; Qian, H.; Sannibale, F.

2015-05-01

The APEX electron source at LBNL combines the high-repetition-rate with the high beam brightness typical of photoguns, delivering low emittance electron pulses at MHz frequency. Proving the high beam quality of the beam is an essential step for the success of the experiment, opening the doors of the high average power to brightness-hungry applications as X-Ray FELs, MHz ultrafast electron diffraction etc.. As first step, a complete characterization of the beam parameters is foreseen at the Gun beam energy of 750 keV. Diagnostics for low and high current measurements have been installed and tested, and measurements of cathode lifetime and thermal emittance in a RF environment with mA current performed. The recent installation of a double slit system, a deflecting cavity and a high precision spectrometer, allow the exploration of the full 6D phase space. Here we discuss the present layout of the machine and future upgrades, showing the latest results at low and high repetition rate, together with the tools and techniques used.

Vacuum microelectronics for beam power and rectennas

NASA Technical Reports Server (NTRS)

Gray, Henry F.

1989-01-01

Vacuum Microelectronic devices can be described as vacuum transistors or micro-miniature vacuum tubes, as one chooses. The fundamental reason behind this new technology is the very large current densities available from field emitters, namely as high as 10(8) A/sq cm. Array current densities as high as 1000 A/sq cm have been measured. Total electron transit times from source to drain for 1 micron feature size devices have been predicted to be about 150fs. This very short transit time implies the possibility of submillimeter wave transmitters and rectennas in devices which can operate with reasonably high voltages and which are small in size and are lightweight. In addition, they are expected to be extremely radiation hard and very temperature insensitive. That is, they are expected to have radiation hardness characteristics similar to vacuum tubes, and both the high temperature and low temperature limits should be determined by the package. That is, there should be no practical intrinsic temperature or carrier freezeout problems for devices based on metals or composites. But the technology is difficult to implement at the present time because it is based on 300 to 500 angstrom radius field emitters which must be relatively uniform. There is also the need to understand the non-equilibrium transport physics in the near-surface regions of the field emitters.

A study of junction effect transistors and their roles in carbon nanotube field emission cathodes in compact pulsed power applications

NASA Astrophysics Data System (ADS)

Shui, Qiong

This thesis is focusing on a study of junction effect transistors (JFETs) in compact pulsed power applications. Pulsed power usually requires switches with high hold-off voltage, high current, low forward voltage drop, and fast switching speed. 4H-SiC, with a bandgap of 3.26 eV (The bandgap of Si is 1.12eV) and other physical and electrical superior properties, has gained much attention in high power, high temperature and high frequency applications. One topic of this thesis is to evaluate if 4H-SiC JFETs have a potential to replace gas phase switches to make pulsed power system compact and portable. Some other pulsed power applications require cathodes of providing stable, uniform, high electron-beam current. So the other topic of this research is to evaluate if Si JFET-controlled carbon nanotube field emitter cold cathode will provide the necessary e-beam source. In the topic of "4H-SiC JFETs", it focuses on the design and simulation of a novel 4H-SiC normally-off VJFET with high breakdown voltage using the 2-D simulator ATLAS. To ensure realistic simulations, we utilized reasonable physical models and the established parameters as the input into these models. The influence of key design parameters were investigated which would extend pulsed power limitations. After optimizing the key design parameters, with a 50-mum drift region, the predicted breakdown voltage for the VJFET is above 8kV at a leakage current of 1x10-5A/cm2 . The specific on-state resistance is 35 mO·cm 2 at VGS = 2.7 V, and the switching speed is several ns. The simulation results suggest that the 4H-SiC VJFET is a potential candidate for improving switching performance in repetitive pulsed power applications. To evaluate the 4H-SiC VJFETs in pulsed power circuits, we extracted some circuit model parameters from the simulated I-V curves. Those parameters are necessary for circuit simulation program such as SPICE. This method could be used as a test bench without fabricating the devices to minimize the unnecessary cost. As an extended research of 4H-SiC devices, Metal-Insulator-SiC (MIS) structures were utilized to evaluate the high dielectric constant materials---TiO 2 and Al2O3, as possible gate dielectrics for SiC devices. TiO2 and Al2O3 were chosen because of their high dielectric constants and bandgap energies as well as the acceptance of Ti and Al in most modern CMOS fabrication facilities. MIS devices were fabricated and both their I-V and C-V characteristics were measured and discussed. Our research showed that Al2O3 deposited by e-beam evaporation could be considered as a promising material among the gate insulators for high power SiC devices. In the topic of "Si JFET-controlled carbon nanotube field emitter cathode arrays", stability, controllability and lifetime are the main issues waiting to be addressed before field emitters find their wide applications. The ideas of connecting Si or metal field emitters with external MOSFETs or built-in active devices were attempted by other researchers, and those devices showed effectiveness in controlling and stabilizing the emission current. We presented the design, simulation, and the fabrication of Si JFETs monolithically integrated with CNTs field emitters. The Si JFET was designed to control and improve the emission of carbon nanotube field emitter arrays. Its electrical characteristics were simulated by the device simulator ATLAS. The fabrication process was developed to be compatible with the last step of growing multiwalled carbon nanotubes at 700°C. Carbon nanotubes field emitters were grown by PECVD (Plasma Enhanced Chemical Vapor Deposition). Preliminary field emission tests were conducted with 50 x 50 emitter arrays, with a resultant emission current of 3 muA (˜40 mA/cm2) at an extraction gate voltage of 50 V and an anode voltage of 300 V. Experimental data shows the linear relationship between ln(I/V2) and l/V consistent with Fowler-Nordheim electron tunneling. Some challenging issues were also discussed.

Life Model of Hollow Cathodes Using a Barium Calcium Aluminate Impregnated Tungsten Emitter

NASA Technical Reports Server (NTRS)

Kovaleski, S. D.; Burke, Tom (Technical Monitor)

2001-01-01

Hollow cathodes with barium calcium aluminate impregnated tungsten emitters for thermionic emission are widely used in electric propulsion. These high current, low power cathodes are employed in ion thrusters, Hall thrusters, and on the International Space Station in plasma contactors. The requirements on hollow cathode life are growing more stringent with the increasing use of electric propulsion technology. The life limiting mechanism that determines the entitlement lifetime of a barium impregnated thermionic emission cathode is the evolution and transport of barium away from the emitter surface. A model is being developed to study the process of barium transport and loss from the emitter insert in hollow cathodes. The model accounts for the production of barium through analysis of the relevant impregnate chemistry. Transport of barium through the approximately static gas is also being treated. Finally, the effect of temperature gradients within the cathode are considered.

Suppression of the emittance growth induced by coherent synchrotron radiation in triple-bend achromats

NASA Astrophysics Data System (ADS)

Huang, Xi-Yang; Jiao, Yi; Xu, Gang; Cui, Xiao-Hao

2015-05-01

The coherent synchrotron radiation (CSR) effect in a bending path plays an important role in transverse emittance dilution in high-brightness light sources and linear colliders, where the electron beams are of short bunch length and high peak current. Suppression of the emittance growth induced by CSR is critical to preserve the beam quality and help improve the machine performance. It has been shown that the CSR effect in a double-bend achromat (DBA) can be analyzed with the two-dimensional point-kick analysis method. In this paper, this method is applied to analyze the CSR effect in a triple-bend achromat (TBA) with symmetric layout, which is commonly used in the optics designs of energy recovery linacs (ERLs). A condition of cancelling the CSR linear effect in such a TBA is obtained, and is verified through numerical simulations. It is demonstrated that emittance preservation can be achieved with this condition, and to a large extent, has a high tolerance to the fluctuation of the initial transverse phase space distribution of the beam. Supported by National Natural Science Foundation of China (11475202, 11405187) and Youth Innovation Promotion Association of Chinese Academy of Sciences (2015009)

Interfacing a small thermophotovoltaic generator to the grid

NASA Astrophysics Data System (ADS)

Durisch, W.; Grob, B.; Mayor, J.-C.; Panitz, J.-C.; Rosselet, A.

1999-03-01

A prototype thermophotovoltaic generator and grid-interfacing device have been developed to demonstrate the feasibility of grid-connected operation. For this purpose a conventional butane burner (rated power 1.35 kWth) was equipped with a ceramic composite emitter made of rare earth oxides. A water layer between emitter and photocells was used to protect the photocells against overheating. It absorbs the nonconvertible emitter radiation and is heated up thereby. The hot water so produced in larger units of this type could be used in a primary recirculation loop to transfer heat to a secondary domestic hot water system. For the photovoltaic generator, commercial grade silicon solar cells with 16% efficiency (under standard test conditions) were used. With the radiation of the emitter, a current of 4.6 A at a maximum power point voltage of 3.3 V was produced, corresponding to a DC output of 15 W and a thermal to DC power conversion efficiency of 1.1%. A specially developed high efficiency DC/DC converter and a modified, commercially available inverter were used to feed the generated power to the local grid. Under the experimental conditions in question the DC/DC-converter and the grid-inverter had efficiencies of 98 and 91%, respectively resulting in an overall interface efficiency of 89%. From modeling of the measured electrical characteristics of the photo cell generator under solar and emitter radiation, it is concluded that the photo current was about three times higher under the filtered emitter radiation. Under these conditions the electrical losses of the photocells were significantly higher than under sunlight.

Interband Tunneling for Hole Injection in III-Nitride Ultraviolet Emitters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yuewei; Krishnamoorthy, Sriram; Johnson, Jared M.

Low p-type conductivity and high contact resistance remain a critical problem in wide band gap AlGaN-based ultraviolet light emitters due to the high acceptor ionization energy. In this work, interband tunneling is demonstrated for non-equilibrium injection of holes through the use of ultra-thin polarization-engineered layers that enhance tunneling probability by several orders of magnitude over a PN homojunction. Al 0.3Ga 0.7N interband tunnel junctions with a lowresistance of 5.6 × 10 -4 Ω cm 2 were obtained and integrated on ultraviolet light emitting diodes.Tunnel injection of holes was used to realize GaN-free ultraviolet light emitters with bottom and top n-typemore » Al 0.3Ga 0.7N contacts. At an emission wavelength of 327 nm, stable output power of 6 W/cm 2 at a current density of 120 A/cm 2 with a forward voltage of 5.9 V was achieved. Our demonstration of efficient interband tunneling could enable device designs for higher efficiency ultraviolet emitters.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Zhichao, E-mail: zcyang.phys@gmail.com; Zhang, Yuewei; Nath, Digbijoy N.

We report on Gallium Nitride-based tunneling hot electron transistor amplifier with common-emitter current gain greater than 1. Small signal current gain up to 5 and dc current gain of 1.3 were attained in common-emitter configuration with collector current density in excess of 50 kA/cm{sup 2}. The use of a combination of 1 nm GaN/3 nm AlN layers as an emitter tunneling barrier was found to improve the energy collimation of the injected electrons. These results represent demonstration of unipolar vertical transistors in the III-nitride system that can potentially lead to higher frequency and power microwave devices.

On the wide-range bias dependence of transistor d.c. and small-signal current gain factors.

NASA Technical Reports Server (NTRS)

Schmidt, P.; Das, M. B.

1972-01-01

Critical reappraisal of the bias dependence of the dc and small-signal ac current gain factors of planar bipolar transistors over a wide range of currents. This is based on a straightforward consideration of the three basic components of the dc base current arising due to emitter-to-base injected minority carrier transport, base-to-emitter carrier injection, and emitter-base surface depletion layer recombination effects. Experimental results on representative n-p-n and p-n-p silicon devices are given which support most of the analytical findings.

Construction and commissioning of the compact energy-recovery linac at KEK

NASA Astrophysics Data System (ADS)

Akemoto, Mitsuo; Arakawa, Dai; Asaoka, Seiji; Cenni, Enrico; Egi, Masato; Enami, Kazuhiro; Endo, Kuninori; Fukuda, Shigeki; Furuya, Takaaki; Haga, Kaiichi; Hajima, Ryoichi; Hara, Kazufumi; Harada, Kentaro; Honda, Tohru; Honda, Yosuke; Honma, Teruya; Hosoyama, Kenji; Kako, Eiji; Katagiri, Hiroaki; Kawata, Hiroshi; Kobayashi, Yukinori; Kojima, Yuuji; Kondou, Yoshinari; Tanaka, Olga; Kume, Tatsuya; Kuriki, Masao; Matsumura, Hiroshi; Matsushita, Hideki; Michizono, Shinichiro; Miura, Takako; Miyajima, Tsukasa; Nagahashi, Shinya; Nagai, Ryoji; Nakai, Hirotaka; Nakajima, Hiromitsu; Nakamura, Norio; Nakanishi, Kota; Nigorikawa, Kazuyuki; Nishimori, Nobuyuki; Nogami, Takashi; Noguchi, Shuichi; Obina, Takashi; Qiu, Feng; Sagehashi, Hidenori; Sakai, Hiroshi; Sakanaka, Shogo; Sasaki, Shinichi; Satoh, Kotaro; Sawamura, Masaru; Shimada, Miho; Shinoe, Kenji; Shishido, Toshio; Tadano, Mikito; Takahashi, Takeshi; Takai, Ryota; Takenaka, Tateru; Tanimoto, Yasunori; Uchiyama, Takashi; Ueda, Akira; Umemori, Kensei; Watanabe, Ken; Yamamoto, Masahiro

2018-01-01

Energy-recovery linacs (ERLs) are promising for advanced synchrotron light sources, high-power free electron lasers (FELs), high-brightness gamma-ray sources, and electron-ion colliders. To demonstrate the critical technology of ERL-based light sources, we have designed and constructed a test accelerator, the compact ERL (cERL). Using advanced technology that includes a photocathode direct current (DC) electron gun and two types of 1.3-GHz-frequency superconducting cavities, the cERL was designed to be capable of recirculating low emittance (≤1 mm ṡ mrad) and high average-current (≥10 mA) electron beams while recovering the beam energy. During initial commissioning, the cERL demonstrated successful recirculation of high-quality beams with normalized transverse emittance of ∼0.14 mm ṡ mrad and momentum spread of ∼1.2 × 10-4 (rms) at a beam energy of 20 MeV and bunch charge below 100 fC. Energy recovery in the superconducting main linac was also demonstrated for high-average-current continuous-wave beams. These results constitute an important milestone toward realizing ERL-based light sources.

High-power laser diodes with high polarization purity

NASA Astrophysics Data System (ADS)

Rosenkrantz, Etai; Yanson, Dan; Peleg, Ophir; Blonder, Moshe; Rappaport, Noam; Klumel, Genady

2017-02-01

Fiber-coupled laser diode modules employ power scaling of single emitters for fiber laser pumping. To this end, techniques such as geometrical, spectral and polarization beam combining (PBC) are used. For PBC, linear polarization with high degree of purity is important, as any non-perfectly polarized light leads to losses and heating. Furthermore, PBC is typically performed in a collimated portion of the beams, which also cancels the angular dependence of the PBC element, e.g., beam-splitter. However, we discovered that single emitters have variable degrees of polarization, which depends both on the operating current and far-field divergence. We present data to show angle-resolved polarization measurements that correlate with the ignition of high-order modes in the slow-axis emission of the emitter. We demonstrate that the ultimate laser brightness includes not only the standard parameters such as power, emitting area and beam divergence, but also the degree of polarization (DoP), which is a strong function of the latter. Improved slow-axis divergence, therefore, contributes not only to high brightness but also high beam combining efficiency through polarization.

Emittance and lifetime measurement with damping wigglers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, G. M.; Shaftan, T., E-mail: shaftan@bnl.gov; Cheng, W. X.

National Synchrotron Light Source II (NSLS-II) is a new third-generation storage ring light source at Brookhaven National Laboratory. The storage ring design calls for small horizontal emittance (<1 nm-rad) and diffraction-limited vertical emittance at 12 keV (8 pm-rad). Achieving low value of the beam size will enable novel user experiments with nm-range spatial and meV-energy resolution. The high-brightness NSLS-II lattice has been realized by implementing 30-cell double bend achromatic cells producing the horizontal emittance of 2 nm rad and then halving it further by using several Damping Wigglers (DWs). This paper is focused on characterization of the DW effects inmore » the storage ring performance, namely, on reduction of the beam emittance, and corresponding changes in the energy spread and beam lifetime. The relevant beam parameters have been measured by the X-ray pinhole camera, beam position monitors, beam filling pattern monitor, and current transformers. In this paper, we compare the measured results of the beam performance with analytic estimates for the complement of the 3 DWs installed at the NSLS-II.« less

Generating high-brightness electron beams via ionization injection by transverse colliding lasers in a plasma-wakefield accelerator.

PubMed

Li, F; Hua, J F; Xu, X L; Zhang, C J; Yan, L X; Du, Y C; Huang, W H; Chen, H B; Tang, C X; Lu, W; Joshi, C; Mori, W B; Gu, Y Q

2013-07-05

The production of ultrabright electron bunches using ionization injection triggered by two transversely colliding laser pulses inside a beam-driven plasma wake is examined via three-dimensional particle-in-cell simulations. The relatively low intensity lasers are polarized along the wake axis and overlap with the wake for a very short time. The result is that the residual momentum of the ionized electrons in the transverse plane of the wake is reduced, and the injection is localized along the propagation axis of the wake. This minimizes both the initial thermal emittance and the emittance growth due to transverse phase mixing. Simulations show that ultrashort (~8 fs) high-current (0.4 kA) electron bunches with a normalized emittance of 8.5 and 6 nm in the two planes, respectively, and a brightness of 1.7×10(19) A rad(-2) m(-2) can be obtained for realistic parameters.

Studies of silicon pn junction solar cells

NASA Technical Reports Server (NTRS)

Lindholm, F. A.; Neugroschel, A.

1977-01-01

Modifications of the basic Shockley equations that result from the random and nonrandom spatial variations of the chemical composition of a semiconductor were developed. These modifications underlie the existence of the extensive emitter recombination current that limits the voltage over the open circuit of solar cells. The measurement of parameters, series resistance and the base diffusion length is discussed. Two methods are presented for establishing the energy bandgap narrowing in the heavily-doped emitter region. Corrections that can be important in the application of one of these methods to small test cells are examined. Oxide-charge-induced high-low-junction emitter (OCI-HLE) test cells which exhibit considerably higher voltage over the open circuit than was previously seen in n-on-p solar cells are described.

Emitter Choice for Epitaxial CdTe Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Tao; Kanevce, Ana; Sites, James R.

2016-11-21

High-quality epitaxial CdTe layers with low defect density and high carrier concentration have been demonstrated by several research groups. Nevertheless, one primary challenge for high-performance epitaxial CdTe solar cells is how to choose a suitable emitter partner for the junction formation. The numerical simulations show that a type I heterojunction with small conduction band offset (0.1 eV = ..delta..Ec = 0.3 eV) is necessary to maintain a good cell efficiency even with large interface recombination. Otherwise, a small 'cliff' can assist interface recombination causing smaller Voc, and a large 'spike' (..delta..Ec = 0.4 eV) can impede the photo current andmore » lead to a reduction of JSC and FF. Among the three possible emitters, CdS, CdMgTe, and MgZnO, CdMgTe (with ~30% Mg) and MgZnO (with ~ 20% Mg) are likely to be a better choice since their type-I junction can tolerate a larger density of interface defects.« less

High-Power Broad-Area Diode Lasers and Laser Bars

NASA Astrophysics Data System (ADS)

Erbert, Goetz; Baerwolff, Arthur; Sebastian, Juergen; Tomm, Jens

This review presents the basic ideas and some examples of the chip technology of high-power diode lasers ( λ= 650,-1060,) in connection with the achievements of mounted single-stripe emitters in recent years.In the first section the optimization of the epitaxial layer structure for a low facet load and high conversion efficiency is discussed. The so-called broadened waveguide Large Optical Cavity (LOC) concept is described and also some advantages and disadvantages of Al-free material. The next section deals with the processing steps of epitaxial wafers to make single emitters and bars. Several possibilities to realize contact windows (implantation, insulators, and wet chemical oxidation) and laser mirrors are presented. The impact of heating in the CW regime and some aspects of reliability are the following topics. The calculation of thermal distributions in diode lasers, which shows the need for sophisticated mounting, will be given. In the last part the current state-of-the-art of single-stripe emitters will be reviewed.

Electrospray performance of interacting multi-capillary emitters in a linear array

NASA Astrophysics Data System (ADS)

Kumar, V.; Srivastava, A.; Shanbhogue, K. M.; Ingersol, S.; Sen, A. K.

2018-03-01

Here, we report electrospray performance of multiple emitters (of internal diameter 200 µm) arranged in a linear (inline) array. For a fixed flow rate Q , at higher voltages {{V}a} , multi-jet mode is observed, which leads to a rapid increase in the spray current (I∼ {{V}a} ) as compared to the single cone-jet case (I∼ Va0.8 ). A theoretical model is presented that predicts (within 10% of experimental data) the divergence of sprays g(x) issued from a pair of interacting emitters due to the mutual Columbic interaction of space charges. The variation of onset voltage {{V}o} and spray current I with spacing between the emitters p is studied and it is found that {{V}o}∼ {{p}-0.2} and I∼ {{p}0.8} . The effect of the flow rate Q , voltage V and number of emitters ~n~ on the spray current I is investigated and it is found that I∼ {{Q}0.5} , I∼ Va0.8 and I∼ \\sqrt{n} . The present work provides insight regarding the behavior of interacting sprays in an inline configuration and could be significant in the design of multiple emitter systems for electrospray applications.

Ultra-high Temperature Emittance Measurements for Space and Missile Applications

NASA Technical Reports Server (NTRS)

Rogers, Jan; Crandall, David

2009-01-01

Advanced modeling and design efforts for many aerospace components require high temperature emittance data. Applications requiring emittance data include propulsion systems, radiators, aeroshells, heatshields/thermal protection systems, and leading edge surfaces. The objective of this work is to provide emittance data at ultra-high temperatures. MSFC has a new instrument for the measurement of emittance at ultra-high temperatures, the Ultra-High Temperature Emissometer System (Ultra-HITEMS). AZ Technology Inc. developed the instrument, designed to provide emittance measurements over the temperature range 700-3500K. The Ultra-HITEMS instrument measures the emittance of samples, heated by lasers, in vacuum, using a blackbody source and a Fourier Transform Spectrometer. Detectors in a Nicolet 6700 FT-IR spectrometer measure emittance over the spectral range of 0.4-25 microns. Emitted energy from the specimen and output from a Mikron M390S blackbody source at the same temperature with matched collection geometry are measured. Integrating emittance over the spectral range yields the total emittance. The ratio provides a direct measure of total hemispherical emittance. Samples are heated using lasers. Optical pyrometry provides temperature data. Optical filters prevent interference from the heating lasers. Data for Inconel 718 show excellent agreement with results from literature and ASTM 835. Measurements taken from levitated spherical specimens provide total hemispherical emittance data; measurements taken from flat specimens mounted in the chamber provide near-normal emittance data. Data from selected characterization studies will be presented. The Ultra-HITEMS technique could advance space and missile technologies by advancing the knowledge base and the technology readiness level for ultra-high temperature materials.

Single Spatial-Mode Room-Temperature-Operated 3.0 to 3.4 micrometer Diode Lasers

NASA Technical Reports Server (NTRS)

Frez, Clifford F.; Soibel, Alexander; Belenky, Gregory; Shterengas, Leon; Kipshidze, Gela

2010-01-01

Compact, highly efficient, 3.0 to 3.4 m light emitters are in demand for spectroscopic analysis and identification of chemical substances (including methane and formaldehyde), infrared countermeasures technologies, and development of advanced infrared scene projectors. The need for these light emitters can be currently addressed either by bulky solid-state light emitters with limited power conversion efficiency, or cooled Interband Cascade (IC) semiconductor lasers. Researchers here have developed a breakthrough approach to fabrication of diode mid-IR lasers that have several advantages over IC lasers used for the Mars 2009 mission. This breakthrough is due to a novel design utilizing the strain-engineered quantum-well (QW) active region and quinternary barriers, and due to optimization of device material composition and growth conditions (growth temperatures and rates). However, in their present form, these GaSb-based laser diodes cannot be directly used as a part of sensor systems. The device spectrum is too broad to perform spectroscopic analysis of gas species, and operating currents and voltages are too high. In the current work, the emitters were fabricated as narrow-ridge waveguide index-guided lasers rather than broad stripe-gain guided multimode Fabry-Perot (FP) lasers as was done previously. These narrow-ridge waveguide mid-IR lasers exhibit much lower power consumptions, and can operate in a single spatial mode that is necessary for demonstration of single-mode distributed feedback (DBF) devices for spectroscopic applications. These lasers will enable a new generation of compact, tunable diode laser spectrometers with lower power consumption, reduced complexity, and significantly reduced development costs. These lasers can be used for the detection of HCN, C2H2, methane, and ethane.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rossi, Adriana; et al.

Long-range beam-beam (LRBB) interactions can be a source of emittance growth and beam losses in the LHC during physics and will become even more relevant with the smaller '* and higher bunch intensities foreseen for the High Luminosity LHC upgrade (HL-LHC), in particular if operated without crab cavities. Both beam losses and emittance growth could be mitigated by compensat-ing the non-linear LRBB kick with a correctly placed current carrying wire. Such a compensation scheme is currently being studied in the LHC through a demonstration test using current-bearing wires embedded into col-limator jaws, installed either side of the high luminosity interactionmore » regions. For HL-LHC two options are considered, a current-bearing wire as for the demonstrator, or electron lenses, as the ideal distance between the particle beam and compensating current may be too small to allow the use of solid materials. This paper reports on the ongoing activities for both options, covering the progress of the wire-in-jaw collimators, the foreseen LRBB experiments at the LHC, and first considerations for the design of the electron lenses to ultimately replace material wires for HL-LHC.« less

High reliability and high performance of 9xx-nm single emitter laser diodes

NASA Astrophysics Data System (ADS)

Bao, L.; Leisher, P.; Wang, J.; Devito, M.; Xu, D.; Grimshaw, M.; Dong, W.; Guan, X.; Zhang, S.; Bai, C.; Bai, J. G.; Wise, D.; Martinsen, R.

2011-03-01

Improved performance and reliability of 9xx nm single emitter laser diodes are presented. To date, over 15,000 hours of accelerated multi-cell lifetest reliability data has been collected, with drive currents from 14A to 18A and junction temperatures ranging from 60°C to 110°C. Out of 208 devices, 14 failures have been observed so far. Using established accelerated lifetest analysis techniques, the effects of temperature and power acceleration are assessed. The Mean Time to Failure (MTTF) is determined to be >30 years, for use condition 10W and junction temperature 353K (80°C), with 90% statistical confidence.

High-speed and on-chip graphene blackbody emitters for optical communications by remote heat transfer.

PubMed

Miyoshi, Yusuke; Fukazawa, Yusuke; Amasaka, Yuya; Reckmann, Robin; Yokoi, Tomoya; Ishida, Kazuki; Kawahara, Kenji; Ago, Hiroki; Maki, Hideyuki

2018-03-29

High-speed light emitters integrated on silicon chips can enable novel architectures for silicon-based optoelectronics, such as on-chip optical interconnects, and silicon photonics. However, conventional light sources based on compound semiconductors face major challenges for their integration with a silicon-based platform because of their difficulty of direct growth on a silicon substrate. Here we report ultra-high-speed (100-ps response time), highly integrated graphene-based on-silicon-chip blackbody emitters in the near-infrared region including telecommunication wavelength. Their emission responses are strongly affected by the graphene contact with the substrate depending on the number of graphene layers. The ultra-high-speed emission can be understood by remote quantum thermal transport via surface polar phonons of the substrates. We demonstrated real-time optical communications, integrated two-dimensional array emitters, capped emitters operable in air, and the direct coupling of optical fibers to the emitters. These emitters can open new routes to on-Si-chip, small footprint, and high-speed emitters for highly integrated optoelectronics and silicon photonics.

A theoretical analysis of the current-voltage characteristics of solar cells

NASA Technical Reports Server (NTRS)

Fang, R. C. Y.; Hauser, J. R.

1979-01-01

The following topics are discussed: (1) dark current-voltage characteristics of solar cells; (2) high efficiency silicon solar cells; (3) short circuit current density as a function of temperature and the radiation intensity; (4) Keldysh-Franz effects and silicon solar cells; (5) thin silicon solar cells; (6) optimum solar cell designs for concentrated sunlight; (7) nonuniform illumination effects of a solar cell; and (8) high-low junction emitter solar cells.

Active spacecraft potential control: An ion emitter experiment. [Cluster mission

NASA Technical Reports Server (NTRS)

Riedler, W.; Goldstein, R.; Hamelin, M.; Maehlum, B. N.; Troim, J.; Olsen, R. C.; Pedersen, A.; Grard, R. J. L.; Schmidt, R.; Rudenauer, F.

1988-01-01

The cluster spacecraft are instrumented with ion emitters for charge neutralization. The emitters produce indium ions at 6 keV. The ion current is adjusted in a feedback loop with instruments measuring the spacecraft potential. The system is based on the evaporation of indium in the apex field of a needle. The design of the active spacecraft potential control instruments, and the ion emitters is presented.

Ultra High p-doping Material Research for GaN Based Light Emitters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vladimir Dmitriev

2007-06-30

The main goal of the Project is to investigate doping mechanisms in p-type GaN and AlGaN and controllably fabricate ultra high doped p-GaN materials and epitaxial structures. Highly doped p-type GaN-based materials with low electrical resistivity and abrupt doping profiles are of great importance for efficient light emitters for solid state lighting (SSL) applications. Cost-effective hydride vapor phase epitaxial (HVPE) technology was proposed to investigate and develop p-GaN materials for SSL. High p-type doping is required to improve (i) carrier injection efficiency in light emitting p-n junctions that will result in increasing of light emitting efficiency, (ii) current spreading inmore » light emitting structures that will improve external quantum efficiency, and (iii) parameters of Ohmic contacts to reduce operating voltage and tolerate higher forward currents needed for the high output power operation of light emitters. Highly doped p-type GaN layers and AlGaN/GaN heterostructures with low electrical resistivity will lead to novel device and contact metallization designs for high-power high efficiency GaN-based light emitters. Overall, highly doped p-GaN is a key element to develop light emitting devices for the DOE SSL program. The project was focused on material research for highly doped p-type GaN materials and device structures for applications in high performance light emitters for general illumination P-GaN and p-AlGaN layers and multi-layer structures were grown by HVPE and investigated in terms of surface morphology and structure, doping concentrations and profiles, optical, electrical, and structural properties. Tasks of the project were successfully accomplished. Highly doped GaN materials with p-type conductivity were fabricated. As-grown GaN layers had concentration N{sub a}-N{sub d} as high as 3 x 10{sup 19} cm{sup -3}. Mechanisms of doping were investigated and results of material studies were reported at several International conferences providing better understanding of p-type GaN formation for Solid State Lighting community. Grown p-type GaN layers were used as substrates for blue and green InGaN-based LEDs made by HVPE technology at TDI. These results proved proposed technical approach and facilitate fabrication of highly conductive p-GaN materials by low-cost HVPE technology for solid state lighting applications. TDI has started the commercialization of p-GaN epitaxial materials.« less

A transistor based on 2D material and silicon junction

NASA Astrophysics Data System (ADS)

Kim, Sanghoek; Lee, Seunghyun

2017-07-01

A new type of graphene-silicon junction transistor based on bipolar charge-carrier injection was designed and investigated. In contrast to many recent studies on graphene field-effect transistor (FET), this device is a new type of bipolar junction transistor (BJT). The transistor fully utilizes the Fermi level tunability of graphene under bias to increase the minority-carrier injection efficiency of the base-emitter junction in the BJT. Single-layer graphene was used to form the emitter and the collector, and a p-type silicon was used as the base. The output of this transistor was compared with a metal-silicon junction transistor ( i.e. surface-barrier transistor) to understand the difference between a graphene-silicon junction and metal-silicon Schottky junction. A significantly higher current gain was observed in the graphene-silicon junction transistor as the base current was increased. The graphene-semiconductor heterojunction transistor offers several unique advantages, such as an extremely thin device profile, a low-temperature (< 110 °C) fabrication process, low cost (no furnace process), and high-temperature tolerance due to graphene's stability. A transistor current gain ( β) of 33.7 and a common-emitter amplifier voltage gain of 24.9 were achieved.

Intra-Beam Scattering, Impedance, and Instabilities in Ultimate Storage Rings

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bane, Karl; /SLAC

We have investigated collective effects in an ultimate storage ring, i.e. one with diffraction limited emittances in both planes, using PEP-X as an example. In an ultimate ring intra-beam scattering (IBS) sets the limit of current that can be stored. In PEP-X, a 4.5 GeV ring running round beams at 200 mA in 3300 bunches, IBS doubles the emittances to 11.5 pm at the design current. The Touschek lifetime is 11 hours. Impedance driven collective effects tend not to be important since the beam current is relatively low. We have investigated collective effects in PEP-X, an ultimate storage ring, i.e.more » one with diffraction limited emittances (at one angstrom wavelength) in both planes. In an ultimate ring intra-beam scattering (IBS) sets the limit of current that can be stored. In PEP-X, IBS doubles the emittances to 11.5 pm at the design current of 200 mA, assuming round beams. The Touschek lifetime is quite large in PEP-X, 11.6 hours, and - near the operating point - increases with decreasing emittance. It is, however, a very sensitive function of momentum acceptance. In an ultimate ring like PEP-X impedance driven collective effects tend not to be important since the beam current is relatively low. Before ultimate PEP-X can be realized, the question of how to run a machine with round beams needs serious study. For example, in this report we assumed that the vertical emittance is coupling dominated. It may turn out that using vertical dispersion is a preferable way to generate round beams. The choice will affect IBS and the Touschek effect.« less

Phase control and fast start-up of a magnetron using modulation of an addressable faceted cathode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Browning, J., E-mail: JimBrowning@BoiseState.edu; Fernandez-Gutierrez, S.; Lin, M. C.

The use of an addressable, faceted cathode has been proposed as a method of modulating current injection in a magnetron to improve performance and control phase. To implement the controllable electron emission, five-sided and ten-sided faceted planar cathodes employing gated field emitters are considered as these emitters could be fabricated on flat substrates. For demonstration, the conformal finite-difference time-domain particle-in-cell simulation, as implemented in VORPAL, has been used to model a ten-cavity, rising sun magnetron using the modulated current sources and benchmarked against a typical continuous current source. For the modulated, ten-sided faceted cathode case, the electrons are injected frommore » three emitter elements on each of the ten facets. Each emitter is turned ON and OFF in sequence at the oscillating frequency with five emitters ON at one time to drive the five electron spokes of the π-mode. The emitter duty cycle is then 1/6th the Radio-Frequency (RF) period. Simulations show a fast start-up time as low as 35 ns for the modulated case compared to 100 ns for the continuous current cases. Analysis of the RF phase using the electron spoke locations and the RF magnetic field components shows that the phase is controlled for the modulated case while it is random, as typical, for the continuous current case. Active phase control during oscillation was demonstrated by shifting the phase of the electron injection 180° after oscillations started. The 180° phase shift time was approximately 25 RF cycles.« less

Prediction and design of efficient exciplex emitters for high-efficiency, thermally activated delayed-fluorescence organic light-emitting diodes.

PubMed

Liu, Xiao-Ke; Chen, Zhan; Zheng, Cai-Jun; Liu, Chuan-Lin; Lee, Chun-Sing; Li, Fan; Ou, Xue-Mei; Zhang, Xiao-Hong

2015-04-08

High-efficiency, thermally activated delayed-fluorescence organic light-emitting diodes based on exciplex emitters are demonstrated. The best device, based on a TAPC:DPTPCz emitter, shows a high external quantum efficiency of 15.4%. Strategies for predicting and designing efficient exciplex emitters are also provided. This approach allow prediction and design of efficient exciplex emitters for achieving high-efficiency organic light-emitting diodes, for future use in displays and lighting applications. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Wedge Absorbers for Final Cooling for a High-Energy High-Luminosity Lepton Collider

DOE Office of Scientific and Technical Information (OSTI.GOV)

Neuffer, David; Mohayai, Tanaz; Snopok, Pavel

2016-06-01

A high-energy high-luminosity muon collider scenario requires a "final cooling" system that reduces transverse emittance to ~25 microns (normalized) while allowing longitudinal emittance increase. Ionization cooling using high-field solenoids (or Li Lens) can reduce transverse emittances to ~100 microns in readily achievable configurations, confirmed by simulation. Passing these muon beams at ~100 MeV/c through cm-sized diamond wedges can reduce transverse emittances to ~25 microns, while increasing longitudinal emittance by a factor of ~5. Implementation will require optical matching of the exiting beam into downstream acceleration systems.

High current liquid metal ion source using porous tungsten multiemitters.

PubMed

Tajmar, M; Vasiljevich, I; Grienauer, W

2010-12-01

We recently developed an indium Liquid-Metal-Ion-Source that can emit currents from sub-μA up to several mA. It is based on a porous tungsten crown structure with 28 individual emitters, which is manufactured using Micro-Powder Injection Molding (μPIM) and electrochemical etching. The emitter combines the advantages of internal capillary feeding with excellent emission properties due to micron-size tips. Significant progress was made on the homogeneity of the emission over its current-voltage characteristic as well as on investigating its long-term stability. This LMIS seems very suitable for space propulsion as well as for micro/nano manufacturing applications with greatly increased milling/drilling speeds. This paper summarizes the latest developments on our porous multiemitters with respect to manufacturing, emission properties and long-term testing. Copyright © 2010 Elsevier B.V. All rights reserved.

High performance incandescent lighting using a selective emitter and nanophotonic filters

NASA Astrophysics Data System (ADS)

Leroy, Arny; Bhatia, Bikram; Wilke, Kyle; Ilic, Ognjen; Soljačić, Marin; Wang, Evelyn N.

2017-09-01

Previous approaches for improving the efficiency of incandescent light bulbs (ILBs) have relied on tailoring the emitted spectrum using cold-side interference filters that reflect the infrared energy back to the emitter while transmitting the visible light. While this approach has, in theory, potential to surpass light-emitting diodes (LEDs) in terms of luminous efficiency while conserving the excellent color rendering index (CRI) inherent to ILBs, challenges such as low view factor between the emitter and filter, high emitter (>2800 K) and filter temperatures and emitter evaporation have significantly limited the maximum efficiency. In this work, we first analyze the effect of non-idealities in the cold-side filter, the emitter and the view factor on the luminous efficiency. Second, we theoretically and experimentally demonstrate that the loss in efficiency associated with low view factors can be minimized by using a selective emitter (e.g., high emissivity in the visible and low emissivity in the infrared) with a filter. Finally, we discuss the challenges in achieving a high performance and long-lasting incandescent light source including the emitter and filter thermal stability as well as emitter evaporation.

Field emission properties of SiO2-wrapped CNT field emitter.

PubMed

Lim, Yu Dian; Hu, Liangxing; Xia, Xin; Ali, Zishan; Wang, Shaomeng; Tay, Beng Kang; Aditya, Sheel; Miao, Jianmin

2018-01-05

Carbon nanotubes (CNTs) exhibit unstable field emission (FE) behavior with low reliability due to uneven heights of as-grown CNTs. It has been reported that a mechanically polished SiO 2 -wrapped CNT field emitter gives consistent FE performance due to its uniform CNT heights. However, there are still a lack of studies on the comparison between the FE properties of freestanding and SiO 2 -wrapped CNTs. In this study, we have performed a comparative study on the FE properties of freestanding and SiO 2 -wrapped CNT field emitters. From the FE measurements, freestanding CNT field emitter requires lower applied voltage of 5.5 V μm -1 to achieve FE current density of 22 mA cm -2 ; whereas SiO 2 -wrapped field emitter requires 8.5 V μm -1 to achieve the same current density. This can be attributed to the lower CNT tip electric field of CNTs embedded in SiO 2 , as obtained from the electric field simulation. Nevertheless, SiO 2 -wrapped CNTs show higher consistency in FE current than freestanding CNTs. Under repeated FE measurement, SiO 2 -wrapped CNT field emitter achieves consistent FE behavior from the 1st voltage sweep, whereas freestanding field emitter only achieved consistent FE performance after 3rd voltage sweep. At the same time, SiO 2 -wrapped CNTs exhibit better emission stability than freestanding CNTs over 4000 s continuous emission.

Field emission properties of SiO2-wrapped CNT field emitter

NASA Astrophysics Data System (ADS)

Lim, Yu Dian; Hu, Liangxing; Xia, Xin; Ali, Zishan; Wang, Shaomeng; Tay, Beng Kang; Aditya, Sheel; Miao, Jianmin

2018-01-01

Carbon nanotubes (CNTs) exhibit unstable field emission (FE) behavior with low reliability due to uneven heights of as-grown CNTs. It has been reported that a mechanically polished SiO2-wrapped CNT field emitter gives consistent FE performance due to its uniform CNT heights. However, there are still a lack of studies on the comparison between the FE properties of freestanding and SiO2-wrapped CNTs. In this study, we have performed a comparative study on the FE properties of freestanding and SiO2-wrapped CNT field emitters. From the FE measurements, freestanding CNT field emitter requires lower applied voltage of 5.5 V μm-1 to achieve FE current density of 22 mA cm-2 whereas SiO2-wrapped field emitter requires 8.5 V μm-1 to achieve the same current density. This can be attributed to the lower CNT tip electric field of CNTs embedded in SiO2, as obtained from the electric field simulation. Nevertheless, SiO2-wrapped CNTs show higher consistency in FE current than freestanding CNTs. Under repeated FE measurement, SiO2-wrapped CNT field emitter achieves consistent FE behavior from the 1st voltage sweep, whereas freestanding field emitter only achieved consistent FE performance after 3rd voltage sweep. At the same time, SiO2-wrapped CNTs exhibit better emission stability than freestanding CNTs over 4000 s continuous emission.

Studies on space charge neutralization and emittance measurement of beam from microwave ion source.

PubMed

Misra, Anuraag; Goswami, A; Sing Babu, P; Srivastava, S; Pandit, V S

2015-11-01

A 2.45 GHz microwave ion source together with a beam transport system has been developed at VECC to study the problems related with the injection of high current beam into a compact cyclotron. This paper presents the results of beam profile measurement of high current proton beam at different degrees of space charge neutralisation with the introduction of neon gas in the beam line using a fine leak valve. The beam profiles have been measured at different pressures in the beam line by capturing the residual gas fluorescence using a CCD camera. It has been found that with space charge compensation at the present current level (∼5 mA at 75 keV), it is possible to reduce the beam spot size by ∼34%. We have measured the variation of beam profile as a function of the current in the solenoid magnet under the neutralised condition and used these data to estimate the rms emittance of the beam. Simulations performed using equivalent Kapchinsky-Vladimirsky beam envelope equations with space charge neutralization factor are also presented to interpret the experimental results.

Studies on space charge neutralization and emittance measurement of beam from microwave ion source

NASA Astrophysics Data System (ADS)

Misra, Anuraag; Goswami, A.; Sing Babu, P.; Srivastava, S.; Pandit, V. S.

2015-11-01

A 2.45 GHz microwave ion source together with a beam transport system has been developed at VECC to study the problems related with the injection of high current beam into a compact cyclotron. This paper presents the results of beam profile measurement of high current proton beam at different degrees of space charge neutralisation with the introduction of neon gas in the beam line using a fine leak valve. The beam profiles have been measured at different pressures in the beam line by capturing the residual gas fluorescence using a CCD camera. It has been found that with space charge compensation at the present current level (˜5 mA at 75 keV), it is possible to reduce the beam spot size by ˜34%. We have measured the variation of beam profile as a function of the current in the solenoid magnet under the neutralised condition and used these data to estimate the rms emittance of the beam. Simulations performed using equivalent Kapchinsky-Vladimirsky beam envelope equations with space charge neutralization factor are also presented to interpret the experimental results.

Improving the Sensitivity of Mass Spectrometry by Using a New Sheath Flow Electrospray Emitter Array at Subambient Pressures

DOE PAGES

Cox, Jonathan T.; Marginean, Ioan; Kelly, Ryan T.; ...

2014-03-28

Arrays of chemically etched emitters with individualized sheath gas capillaries have been developed to enhance electrospray ionization (ESI) at subambient pressures. By including an emitter array in a subambient pressure ionization with nanoelectrospray (SPIN) source, ionization and transmission efficiency can be maximized allowing for increased sensitivity in mass spectrometric analyses. The SPIN source eliminates the major ion losses at conventional ESI-mass spectrometry (MS) interface by placing the emitter in the first vacuum region of the instrument. To facilitate stable electrospray currents in such conditions we have developed an improved emitter array with individualized sheath gas around each emitter. The utilitymore » of the new emitter arrays for generating stable multi-electrosprays at subambient pressures was probed by coupling the emitter array/SPIN source with a time of flight (TOF) mass spectrometer. The instrument sensitivity was compared between single emitter/SPIN-MS and multi-emitter/SPIN-MS configurations using an equimolar solution of 9 peptides. An increase in sensitivity correlative to the number of emitters in the array was observed.« less

Improving the Sensitivity of Mass Spectrometry by Using a New Sheath Flow Electrospray Emitter Array at Subambient Pressures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cox, Jonathan T.; Marginean, Ioan; Kelly, Ryan T.

Arrays of chemically etched emitters with individualized sheath gas capillaries have been developed to enhance electrospray ionization (ESI) at subambient pressures. By including an emitter array in a subambient pressure ionization with nanoelectrospray (SPIN) source, ionization and transmission efficiency can be maximized allowing for increased sensitivity in mass spectrometric analyses. The SPIN source eliminates the major ion losses at conventional ESI-mass spectrometry (MS) interface by placing the emitter in the first vacuum region of the instrument. To facilitate stable electrospray currents in such conditions we have developed an improved emitter array with individualized sheath gas around each emitter. The utilitymore » of the new emitter arrays for generating stable multi-electrosprays at subambient pressures was probed by coupling the emitter array/SPIN source with a time of flight (TOF) mass spectrometer. The instrument sensitivity was compared between single emitter/SPIN-MS and multi-emitter/SPIN-MS configurations using an equimolar solution of 9 peptides. An increase in sensitivity correlative to the number of emitters in the array was observed.« less

Parameter Optimization of PAL-XFEL Injector

NASA Astrophysics Data System (ADS)

Lee, Jaehyun; Ko, In Soo; Han, Jang-Hui; Hong, Juho; Yang, Haeryong; Min, Chang Ki; Kang, Heung-Sik

2018-05-01

A photoinjector is used as the electron source to generate a high peak current and low emittance beam for an X-ray free electron laser (FEL). The beam emittance is one of the critical parameters to determine the FEL performance together with the slice energy spread and the peak current. The Pohang Accelerator Laboratory X-ray Free Electron Laser (PAL-XFEL) was constructed in 2015, and the beam commissioning was carried out in spring 2016. The injector is running routinely for PAL-XFEL user operation. The operational parameters of the injector have been optimized experimentally, and these are somewhat different from the originally designed ones. Therefore, we study numerically the injector parameters based on the empirically optimized parameters and review the present operating condition.

Molecular dynamics simulations of field emission from a planar nanodiode

NASA Astrophysics Data System (ADS)

Torfason, Kristinn; Valfells, Agust; Manolescu, Andrei

2015-03-01

High resolution molecular dynamics simulations with full Coulomb interactions of electrons are used to investigate field emission in planar nanodiodes. The effects of space-charge and emitter radius are examined and compared to previous results concerning transition from Fowler-Nordheim to Child-Langmuir current [Y. Y. Lau, Y. Liu, and R. K. Parker, Phys. Plasmas 1, 2082 (1994) and Y. Feng and J. P. Verboncoeur, Phys. Plasmas 13, 073105 (2006)]. The Fowler-Nordheim law is used to determine the current density injected into the system and the Metropolis-Hastings algorithm to find a favourable point of emission on the emitter surface. A simple fluid like model is also developed and its results are in qualitative agreement with the simulations.

Molecular dynamics simulations of field emission from a planar nanodiode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Torfason, Kristinn; Valfells, Agust; Manolescu, Andrei

High resolution molecular dynamics simulations with full Coulomb interactions of electrons are used to investigate field emission in planar nanodiodes. The effects of space-charge and emitter radius are examined and compared to previous results concerning transition from Fowler-Nordheim to Child-Langmuir current [Y. Y. Lau, Y. Liu, and R. K. Parker, Phys. Plasmas 1, 2082 (1994) and Y. Feng and J. P. Verboncoeur, Phys. Plasmas 13, 073105 (2006)]. The Fowler-Nordheim law is used to determine the current density injected into the system and the Metropolis-Hastings algorithm to find a favourable point of emission on the emitter surface. A simple fluid likemore » model is also developed and its results are in qualitative agreement with the simulations.« less

Monolayer graphene-insulator-semiconductor emitter for large-area electron lithography

NASA Astrophysics Data System (ADS)

Kirley, Matthew P.; Aloui, Tanouir; Glass, Jeffrey T.

2017-06-01

The rapid adoption of nanotechnology in fields as varied as semiconductors, energy, and medicine requires the continual improvement of nanopatterning tools. Lithography is central to this evolving nanotechnology landscape, but current production systems are subject to high costs, low throughput, or low resolution. Herein, we present a solution to these problems with the use of monolayer graphene in a graphene-insulator-semiconductor (GIS) electron emitter device for large-area electron lithography. Our GIS device displayed high emission efficiency (up to 13%) and transferred large patterns (500 × 500 μm) with high fidelity (<50% spread). The performance of our device demonstrates a feasible path to dramatic improvements in lithographic patterning systems, enabling continued progress in existing industries and opening opportunities in nanomanufacturing.

A Yellow-Emitting Homoleptic Iridium(III) Complex Constructed from a Multifunctional Spiro Ligand for Highly Efficient Phosphorescent Organic Light-Emitting Diodes.

PubMed

Ren, Bao-Yi; Guo, Run-Da; Zhong, Dao-Kun; Ou, Chang-Jin; Xiong, Gang; Zhao, Xiang-Hua; Sun, Ya-Guang; Jurow, Matthew; Kang, Jun; Zhao, Yi; Li, Sheng-Biao; You, Li-Xin; Wang, Lin-Wang; Liu, Yi; Huang, Wei

2017-07-17

To suppress concentration quenching and to improve charge-carrier injection/transport in the emission layer (EML) of phosphorescent organic light-emitting diodes (PhOLEDs), a facial homoleptic iridium(III) complex emitter with amorphous characteristics was designed and prepared in one step from a multifunctional spiro ligand containing spiro[fluorene-9,9'-xanthene] (SFX) unit. Single-crystal X-ray analysis of the resulting fac-Ir(SFXpy) 3 complex revealed an enlarged Ir···Ir distance and negligible intermolecular π-π interactions between the spiro ligands. The emitter exhibits yellow emission and almost equal energy levels compared to the commercial phosphor iridium(III) bis(4-phenylthieno[3,2-c]pyridinato-N,C 2 ')acetylacetonate (PO-01). Dry-processed devices using a common host, 4,4'-bis(N-carbazolyl)-1,1'-biphenyl, and the fac-Ir(SFXpy) 3 emitter at a doping concentration of 15 wt % exhibited a peak performance of 46.2 cd A -1 , 36.3 lm W -1 , and 12.1% for the current efficiency (CE), power efficiency (PE), and external quantum efficiency (EQE), respectively. Compared to control devices using PO-01 as the dopant, the fac-Ir(SFXpy) 3 -based devices remained superior in the doping range between 8 and 15 wt %. The current densities went up with increasing doping concentration at the same driving voltage, while the roll-offs remain relatively low even at high doping levels. The superior performance of the new emitter-based devices was ascribed to key roles of the spiro ligand for suppressing aggregation and assisting charge-carrier injection/transport. Benefiting from the amorphous stability of the emitter, the wet-processed device also exhibited respectful CE, PE, and EQE of 32.2 cd A -1 , 22.1 lm W -1 , and 11.3%, respectively, while the EQE roll-off was as low as 1.7% at the luminance of 1000 cd m -2 . The three-dimensional geometry and binary-conjugation features render SFX the ideal multifunctional module for suppressing concentration quenching, facilitating charge-carrier injection/transport, and improving the amorphous stability of iridium(III)-based phosphorescent emitters.

Parallel nanomanufacturing via electrohydrodynamic jetting from microfabricated externally-fed emitter arrays

NASA Astrophysics Data System (ADS)

Ponce de Leon, Philip J.; Hill, Frances A.; Heubel, Eric V.; Velásquez-García, Luis F.

2015-06-01

We report the design, fabrication, and characterization of planar arrays of externally-fed silicon electrospinning emitters for high-throughput generation of polymer nanofibers. Arrays with as many as 225 emitters and with emitter density as large as 100 emitters cm-2 were characterized using a solution of dissolved PEO in water and ethanol. Devices with emitter density as high as 25 emitters cm-2 deposit uniform imprints comprising fibers with diameters on the order of a few hundred nanometers. Mass flux rates as high as 417 g hr-1 m-2 were measured, i.e., four times the reported production rate of the leading commercial free-surface electrospinning sources. Throughput increases with increasing array size at constant emitter density, suggesting the design can be scaled up with no loss of productivity. Devices with emitter density equal to 100 emitters cm-2 fail to generate fibers but uniformly generate electrosprayed droplets. For the arrays tested, the largest measured mass flux resulted from arrays with larger emitter separation operating at larger bias voltages, indicating the strong influence of electrical field enhancement on the performance of the devices. Incorporation of a ground electrode surrounding the array tips helps equalize the emitter field enhancement across the array as well as control the spread of the imprints over larger distances.

Optical intensity dynamics in a five-emitter semiconductor array laser

NASA Astrophysics Data System (ADS)

Williams, Matthew O.; Kutz, J. Nathan

2009-06-01

The intensity dynamics of a five-emitter laser array subject to a linearly decreasing injection current are examined numerically. We have matched the results of the numerical model to an experimental AlGaAs quantum-dot array laser and have achieved the same robust oscillatory power output with a nearly π phase shift between emitters that was observed in experiments. Due to the linearly decreasing injection current, the output power of the waveguide decreases as a function of waveguide number. For injection currents ranging from 380 to 500 mA, the oscillatory behavior persists with only a slight change in phase difference. However, the fundamental frequency of oscillation increases with injection current, and higher harmonics as well as some fine structures are produced.

Organic light-emitting diodes for lighting: High color quality by controlling energy transfer processes in host-guest-systems

NASA Astrophysics Data System (ADS)

Weichsel, Caroline; Reineke, Sebastian; Furno, Mauro; Lüssem, Björn; Leo, Karl

2012-02-01

Exciton generation and transfer processes in a multilayer organic light-emitting diode (OLED) are studied in order to realize OLEDs with warm white color coordinates and high color-rendering index (CRI). We investigate a host-guest-system containing four phosphorescent emitters and two matrix materials with different transport properties. We show, by time-resolved spectroscopy, that an energy back-transfer from the blue emitter to the matrix materials occurs, which can be used to transport excitons to the other emitter molecules. Furthermore, we investigate the excitonic and electronic transfer processes by designing suitable emission layer stacks. As a result, we obtain an OLED with Commission Internationale de lÉclairage (CIE) coordinates of (0.444;0.409), a CRI of 82, and a spectrum independent of the applied current. The OLED shows an external quantum efficiency of 10% and a luminous efficacy of 17.4 lm/W at 1000 cd/m2.

Direct Synthesis of Carbon Nanotube Field Emitters on Metal Substrate for Open-Type X-ray Source in Medical Imaging.

PubMed

Gupta, Amar Prasad; Park, Sangjun; Yeo, Seung Jun; Jung, Jaeik; Cho, Chonggil; Paik, Sang Hyun; Park, Hunkuk; Cho, Young Chul; Kim, Seung Hoon; Shin, Ji Hoon; Ahn, Jeung Sun; Ryu, Jehwang

2017-07-29

We report the design, fabrication and characterization of a carbon nanotube enabled open-type X-ray system for medical imaging. We directly grew the carbon nanotubes used as electron emitter for electron gun on a non-polished raw metallic rectangular-rounded substrate with an area of 0.1377 cm² through a plasma enhanced chemical vapor deposition system. The stable field emission properties with triode electrodes after electrical aging treatment showed an anode emission current of 0.63 mA at a gate field of 7.51 V/μm. The 4.5-inch cubic shape open type X-ray system was developed consisting of an X-ray aperture, a vacuum part, an anode high voltage part, and a field emission electron gun including three electrodes with focusing, gate and cathode electrodes. Using this system, we obtained high-resolution X-ray images accelerated at 42-70 kV voltage by digital switching control between emitter and ground electrode.

Direct Synthesis of Carbon Nanotube Field Emitters on Metal Substrate for Open-Type X-ray Source in Medical Imaging

PubMed Central

Gupta, Amar Prasad; Park, Sangjun; Yeo, Seung Jun; Jung, Jaeik; Cho, Chonggil; Paik, Sang Hyun; Park, Hunkuk; Cho, Young Chul; Kim, Seung Hoon; Shin, Ji Hoon; Ahn, Jeung Sun; Ryu, Jehwang

2017-01-01

We report the design, fabrication and characterization of a carbon nanotube enabled open-type X-ray system for medical imaging. We directly grew the carbon nanotubes used as electron emitter for electron gun on a non-polished raw metallic rectangular-rounded substrate with an area of 0.1377 cm2 through a plasma enhanced chemical vapor deposition system. The stable field emission properties with triode electrodes after electrical aging treatment showed an anode emission current of 0.63 mA at a gate field of 7.51 V/μm. The 4.5-inch cubic shape open type X-ray system was developed consisting of an X-ray aperture, a vacuum part, an anode high voltage part, and a field emission electron gun including three electrodes with focusing, gate and cathode electrodes. Using this system, we obtained high-resolution X-ray images accelerated at 42–70 kV voltage by digital switching control between emitter and ground electrode. PMID:28773237

NCTM of liquids at high temperatures using polarization techniques

NASA Technical Reports Server (NTRS)

Krishnan, Shankar; Weber, J. K. Richard; Nordine, Paul C.; Schiffman, Robert A.

1990-01-01

Temperature measurement and control is extremely important in any materials processing application. However, conventional techniques for non-contact temperature measurement (mainly optical pyrometry) are very uncertain because of unknown or varying surface emittance. Optical properties like other properties change during processing. A dynamic, in-situ measurement of optical properties including the emittance is required. Intersonics is developing new technologies using polarized laser light scattering to determine surface emittance of freely radiating bodies concurrent with conventional optical pyrometry. These are sufficient to determine the true surface temperature of the target. Intersonics is currently developing a system called DAPP, the Division of Amplitude Polarimetric Pyrometer, that uses polarization information to measure the true thermodynamic temperature of freely radiating objects. This instrument has potential use in materials processing applications in ground and space based equipment. Results of thermophysical and thermodynamic measurements using laser reflection as a temperature measuring tool are presented. The impact of these techniques on thermophysical property measurements at high temperature is discussed.

Additively manufactured MEMS multiplexed coaxial electrospray sources for high-throughput, uniform generation of core-shell microparticles.

PubMed

Olvera-Trejo, D; Velásquez-García, L F

2016-10-18

This study reports the first MEMS multiplexed coaxial electrospray sources in the literature. Coaxial electrospraying is a microencapsulation technology based on electrohydrodynamic jetting of two immiscible liquids, which allows precise control with low size variation of the geometry of the core-shell particles it generates, which is of great importance in numerous biomedical and engineering applications, e.g., drug delivery and self-healing composites. By implementing monolithic planar arrays of miniaturized coaxial electrospray emitters that work uniformly in parallel, the throughput of the compound microdroplet source is greatly increased, making the microencapsulation technology compatible with low-cost commercial applications. Miniaturized core-shell particle generators with up to 25 coaxial electrospray emitters (25 emitters cm -2 ) were fabricated via stereolithography, which is an additive manufacturing process that can create complex microfluidic devices at a small fraction of the cost per device and fabrication time associated with silicon-based counterparts. The characterization of devices with the same emitter structure but different array sizes demonstrates uniform array operation. Moreover, the data demonstrate that the per-emitter current is approximately proportional to the square root of the flow rate of the driving liquid, and it is independent of the flow rate of the driven liquid, as predicted by the theory. The core/shell diameters and the size distribution of the generated compound microparticles can be modulated by controlling the flow rates fed to the emitters.

Laser-photofield emission from needle cathodes for low-emittance electron beams.

PubMed

Ganter, R; Bakker, R; Gough, C; Leemann, S C; Paraliev, M; Pedrozzi, M; Le Pimpec, F; Schlott, V; Rivkin, L; Wrulich, A

2008-02-15

Illumination of a ZrC needle with short laser pulses (16 ps, 266 nm) while high voltage pulses (-60 kV, 2 ns, 30 Hz) are applied, produces photo-field emitted electron bunches. The electric field is high and varies rapidly over the needle surface so that quantum efficiency (QE) near the apex can be much higher than for a flat photocathode due to the Schottky effect. Up to 150 pC (2.9 A peak current) have been extracted by photo-field emission from a ZrC needle. The effective emitting area has an estimated radius below 50 microm leading to a theoretical intrinsic emittance below 0.05 mm mrad.

Xenon gas field ion source from a single-atom tip

NASA Astrophysics Data System (ADS)

Lai, Wei-Chiao; Lin, Chun-Yueh; Chang, Wei-Tse; Li, Po-Chang; Fu, Tsu-Yi; Chang, Chia-Seng; Tsong, T. T.; Hwang, Ing-Shouh

2017-06-01

Focused ion beam (FIB) systems have become powerful diagnostic and modification tools for nanoscience and nanotechnology. Gas field ion sources (GFISs) built from atomic-size emitters offer the highest brightness among all ion sources and thus can improve the spatial resolution of FIB systems. Here we show that the Ir/W(111) single-atom tip (SAT) can emit high-brightness Xe+ ion beams with a high current stability. The ion emission current versus extraction voltage was analyzed from 150 K up to 309 K. The optimal emitter temperature for maximum Xe+ ion emission was ˜150 K and the reduced brightness at the Xe gas pressure of 1 × 10-4 torr is two to three orders of magnitude higher than that of a Ga liquid metal ion source, and four to five orders of magnitude higher than that of a Xe inductively coupled plasma ion source. Most surprisingly, the SAT emitter remained stable even when operated at 309 K. Even though the ion current decreased with increasing temperature, the current at room temperature (RT) could still reach over 1 pA when the gas pressure was higher than 1 × 10-3 torr, indicating the feasibility of RT-Xe-GFIS for application to FIB systems. The operation temperature of Xe-SAT-GFIS is considerably higher than the cryogenic temperature required for the helium ion microscope (HIM), which offers great technical advantages because only simple or no cooling schemes can be adopted. Thus, Xe-GFIS-FIB would be easy to implement and may become a powerful tool for nanoscale milling and secondary ion mass spectroscopy.

Chemically doped three-dimensional porous graphene monoliths for high-performance flexible field emitters.

PubMed

Kim, Ho Young; Jeong, Sooyeon; Jeong, Seung Yol; Baeg, Kang-Jun; Han, Joong Tark; Jeong, Mun Seok; Lee, Geon-Woong; Jeong, Hee Jin

2015-03-12

Despite the recent progress in the fabrication of field emitters based on graphene nanosheets, their morphological and electrical properties, which affect their degree of field enhancement as well as the electron tunnelling barrier height, should be controlled to allow for better field-emission properties. Here we report a method that allows the synthesis of graphene-based emitters with a high field-enhancement factor and a low work function. The method involves forming monolithic three-dimensional (3D) graphene structures by freeze-drying of a highly concentrated graphene paste and subsequent work-function engineering by chemical doping. Graphene structures with vertically aligned edges were successfully fabricated by the freeze-drying process. Furthermore, their number density could be controlled by varying the composition of the graphene paste. Al- and Au-doped 3D graphene emitters were fabricated by introducing the corresponding dopant solutions into the graphene sheets. The resulting field-emission characteristics of the resulting emitters are discussed. The synthesized 3D graphene emitters were highly flexible, maintaining their field-emission properties even when bent at large angles. This is attributed to the high crystallinity and emitter density and good chemical stability of the 3D graphene emitters, as well as to the strong interactions between the 3D graphene emitters and the substrate.

Diamond field emitter array cathodes and possibilities of employing additive manufacturing for dielectric laser accelerating structures

NASA Astrophysics Data System (ADS)

Simakov, Evgenya I.; Andrews, Heather L.; Herman, Matthew J.; Hubbard, Kevin M.; Weis, Eric

2017-03-01

Demonstration of a stand-alone practical dielectric laser accelerator (DLA) requires innovation in two major critical components: high-current ultra-low-emittance cathodes and efficient laser accelerator structures. LANL develops two technologies that in our opinion are applicable to the novel DLA architectures: diamond field emitter array (DFEA) cathodes and additive manufacturing of photonic band-gap (PBG) structures. This paper discusses the results of testing of DFEA cathodes in the field-emission regime and the possibilities for their operation in the photoemission regime, and compares their emission characteristics to the specific needs of DLAs. We also describe recent advances in additive manufacturing of dielectric woodpile structures using a Nanoscribe direct laser-writing device capable of maskless lithography and additive manufacturing, and the development of novel infrared dielectric materials compatible with additive manufacturing.

Thermionic converter

DOEpatents

Rasor, Ned S.; Britt, Edward J.

1976-01-01

A gas-filled thermionic converter is provided with a collector and an emitter having a main emitter region and an auxiliary emitter region in electrical contact with the main emitter region. The main emitter region is so positioned with respect to the collector that a main gap is formed therebetween and the auxiliary emitter region is so positioned with respect to the collector that an auxiliary gap is formed therebetween partially separated from the main gap with access allowed between the gaps to allow ionizable gas in each gap to migrate therebetween. With heat applied to the emitter the work function of the auxiliary emitter region is sufficiently greater than the work function of the collector so that an ignited discharge occurs in the auxiliary gap and the work function of the main emitter region is so related to the work function of the collector that an unignited discharge occurs in the main gap sustained by the ions generated in the auxiliary gap. A current flows through a load coupled across the emitter and collector due to the unignited discharge in the main gap.

An accurate two-dimensional LBIC solution for bipolar transistors

NASA Astrophysics Data System (ADS)

Benarab, A.; Baudrand, H.; Lescure, M.; Boucher, J.

1988-05-01

A complete solution of the diffusion problem of carriers generated by a located light beam in the emitter and base region of a bipolar structure is presented. Green's function method and moment method are used to solve the 2-D diffusion equation in these regions. From the Green's functions solution of these equations, the light beam induced currents (LBIC) in the different junctions of the structure due to an extended generation represented by a rectangular light spot; are thus decided. The equations of these currents depend both on the parameters which characterise the structure, surface states, dimensions of the emitter and the base region, and the characteristics of the light spot, that is to say, the width and the wavelength. Curves illustrating the variation of the various LBIC in the base region junctions as a function of the impact point of the light beam ( x0) for different values of these parameters are discussed. In particular, the study of the base-emitter currents when the light beam is swept right across the sample illustrates clearly a good geometrical definition of the emitter region up to base end of the emitter-base space-charge areas and a "whirl" lateral diffusion beneath this region, (i.e. the diffusion of the generated carriers near the surface towards the horizontal base-emitter junction and those created beneath this junction towards the lateral (B-E) junctions).

Vertical electron transport in van der Waals heterostructures with graphene layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ryzhii, V., E-mail: v-ryzhii@riec.tohoku.ac.jp; Center for Photonics and Infrared Engineering, Bauman Moscow State Technical University and Institute of Ultra High Frequency Semiconductor Electronics of RAS, Moscow 111005; Otsuji, T.

We propose and analyze an analytical model for the self-consistent description of the vertical electron transport in van der Waals graphene-layer (GL) heterostructures with the GLs separated by the barriers layers. The top and bottom GLs serve as the structure emitter and collector. The vertical electron transport in such structures is associated with the propagation of the electrons thermionically emitted from GLs above the inter-GL barriers. The model under consideration describes the processes of the electron thermionic emission from and the electron capture to GLs. It accounts for the nonuniformity of the self-consistent electric field governed by the Poisson equationmore » which accounts for the variation of the electron population in GLs. The model takes also under consideration the cooling of electrons in the emitter layer due to the Peltier effect. We find the spatial distributions of the electric field and potential with the high-electric-field domain near the emitter GL in the GL heterostructures with different numbers of GLs. Using the obtained spatial distributions of the electric field, we calculate the current-voltage characteristics. We demonstrate that the Peltier cooling of the two-dimensional electron gas in the emitter GL can strongly affect the current-voltage characteristics resulting in their saturation. The obtained results can be important for the optimization of the hot-electron bolometric terahertz detectors and different devices based on GL heterostructures.« less

Doping-free white organic light-emitting diodes without blue molecular emitter: An unexplored approach to achieve high performance via exciplex emission

NASA Astrophysics Data System (ADS)

Luo, Dongxiang; Xiao, Ye; Hao, Mingming; Zhao, Yu; Yang, Yibin; Gao, Yuan; Liu, Baiquan

2017-02-01

Doping-free white organic light-emitting diodes (DF-WOLEDs) are promising for the low-cost commercialization because of their simplified device structures. However, DF-WOLEDs reported thus far in the literature are based on the use of blue single molecular emitters, whose processing can represent a crucial point in device manufacture. Herein, DF-WOLEDs without the blue single molecular emitter have been demonstrated by managing a blue exciplex system. For the single-molecular-emitter (orange or yellow emitter) DF-WOLEDs, (i) a color rendering index (CRI) of 81 at 1000 cd/m2 can be obtained, which is one of the highest for the single-molecular-emitter WOLEDs, or (ii) a high efficiency of 35.4 lm/W can be yielded. For the dual-molecular-emitter (yellow/red emitters) DF-WOLED, a high CRI of 85 and low correlated color temperature of 2376 K at 1000 cd/m2 have been simultaneously achieved, which has not been reported by previous DF-WOLEDs. Such presented findings may unlock an alternative avenue to the simplified but high-performance WOLEDs.

Rare Earth Garnet Selective Emitter

NASA Technical Reports Server (NTRS)

Lowe, Roland A.; Chubb, Donald L.; Farmer, Serene C.; Good, Brian S.

1994-01-01

Thin film Ho-YAG and Er-YAG emitters with a platinum substrate exhibit high spectral emittance in the emission band (epsilon(sub lambda) approx. = 0.75, sup 4)|(sub 15/2) - (sup 4)|(sub 13/2),for Er-YAG and epsilon(sub lambda) approx. = 0.65, (sup 5)|(sub 7) - (sup 5)|(sub 8) for Ho-YAG) at 1500 K. In addition, low out-of-band spectral emittance, epsilon(sub lambda) less than 0.2, suggest these materials would be excellent candidates for high efficiency selective emitters in thermophotovoltaic (TPV) systems operating at moderate temperatures (1200-1500 K). Spectral emittance measurements of the thin films were made (1.2 less than lambda less than 3.0 microns) and compared to the theoretical emittances calculated using measured values of the spectral extinction coefficient. In this paper we present the results for a new class of rare earth ion selective emitters. These emitters are thin sections (less than 1 mm) of yttrium aluminum garnet (YAG) single crystal with a rare earth substitutional impurity. Selective emitters in the near IR are of special interest for thermophotovoltaic (TPV) energy conversion. The most promising solid selective emitters for use in a TPV system are rare earth oxides. Early spectral emittance work on rare earth oxides showed strong emission bands in the infrared (0.9 - 3 microns). However, the emittance outside the emission band was also significant and the efficiency of these emitters was low. Recent improvements in efficiency have been made with emitters fabricated from fine (5 - 10 microns) rare earth oxide fibers similar to the Welsbach mantle used in gas lanterns. However, the rare earth garnet emitters are more rugged than the mantle type emitters. A thin film selective emitter on a low emissivity substrate such as gold, platinum etc., is rugged and easily adapted to a wide variety of thermal sources. The garnet structure and its many subgroups have been successfully used as hosts for rare earth ions, introduced as substitutional impurities, in the development of solid state laser crystals. Doping, dependent on the particular ion and crystal structure, may be as high as 100 at. % (complete substitution of yttrium ion with the rare earth ion). These materials have high melting points, 1940 C for YAG (Yttrium Aluminum Garnet), and low emissivity in the near infrared making them excellent candidates for a thin film selective emitter. As previously stated, the spectral emittance of a rare earth emitter is characterized by one or more well defined emission bands. Outside the emission band the emittance(absorptance) is much lower. Therefore, it is expected that emission outside the band for a thin film selective emitter will be dominated by the emitter substrate. For an efficient emitter (power in the emission band/total emitted power) the substrate must have low emittance, epsilon(sub S). This paper presents normal spectral emittance, epsilon(sub lambda), measurements of holmium(Ho) and erbium (Er) doped YAG thin film selective emitters at (1500 K), and compares those results with the theoretical spectral emittance.

Reprint of: High current liquid metal ion source using porous tungsten multiemitters.

PubMed

Tajmar, M; Vasiljevich, I; Grienauer, W

2011-05-01

We recently developed an indium Liquid-Metal-Ion-Source that can emit currents from sub-μA up to several mA. It is based on a porous tungsten crown structure with 28 individual emitters, which is manufactured using Micro-Powder Injection Molding (μPIM) and electrochemical etching. The emitter combines the advantages of internal capillary feeding with excellent emission properties due to micron-size tips. Significant progress was made on the homogeneity of the emission over its current-voltage characteristic as well as on investigating its long-term stability. This LMIS seems very suitable for space propulsion as well as for micro/nano manufacturing applications with greatly increased milling/drilling speeds. This paper summarizes the latest developments on our porous multiemitters with respect to manufacturing, emission properties and long-term testing. Copyright © 2010 Elsevier B.V. All rights reserved.

Design and fabrication of a duoplasmatron extraction geometry and LEBT for the LANSCE H{sup +} RFQ project

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fortgang, C. M., E-mail: cfortgang@lanl.gov; Batygin, Y. K.; Draganic, I. N.

The 750-keV H{sup +} Cockcroft-Walton at LANSCE will be replaced with a recently fabricated 4-rod Radio Frequency Quadrupole (RFQ) with injection energy of 35 keV. The existing duoplasmatron source extraction optics need to be modified to produce up to 35 mA of H{sup +} current with an emittance <0.02 π-cm-mrad (rms, norm) for injection into the RFQ. Parts for the new source have been fabricated and assembly is in process. We will use the existing duoplasmatron source with a newly designed extraction system and low energy beam transport (LEBT) for beam injection into the RFQ. In addition to source modifications,more » we need a new LEBT for transport and matching into the RFQ. The LEBT uses two magnetic solenoids with enough drift space between them to accommodate diagnostics and a beam deflector. The LEBT is designed to work over a range of space-charge neutralized currents and emittances. The LEBT is optimized in the sense that it minimizes the beam size in both solenoids for a point design of a given neutralized current and emittance. Special attention has been given to estimating emittance growth due to source extraction optics and solenoid aberrations. Examples of source-to-RFQ matching and emittance growth (due to both non-linear space charge and solenoid aberrations) are presented over a range of currents and emittances about the design point. A mechanical layout drawing will be presented along with the status of the source and LEBT, design, and fabrication.« less

Sharpening of field emitter tips using high-energy ions

DOEpatents

Musket, Ronald G.

1999-11-30

A process for sharpening arrays of field emitter tips of field emission cathodes, such as found in field-emission, flat-panel video displays. The process uses sputtering by high-energy (more than 30 keV) ions incident along or near the longitudinal axis of the field emitter to sharpen the emitter with a taper from the tip or top of the emitter down to the shank of the emitter. The process is particularly applicable to sharpening tips of emitters having cylindrical or similar (e.g., pyramidal) symmetry. The process will sharpen tips down to radii of less than 12 nm with an included angle of about 20 degrees. Because the ions are incident along or near the longitudinal axis of each emitter, the tips of gated arrays can be sharpened by high-energy ion beams rastered over the arrays using standard ion implantation equipment. While the process is particularly applicable for sharpening of arrays of field emitters in field-emission flat-panel displays, it can be effectively utilized in the fabrication of other vacuum microelectronic devices that rely on field emission of electrons.

Novel Infrared Phototransistors for Atmospheric CO2 Profiling at 2 microns Wavelength

NASA Technical Reports Server (NTRS)

Refaat, Tamer F.; Abedin, M. Nurul; Sulima, Oleg V.; Singh, Upendra N.; Ismail, Syed

2004-01-01

Two-micron detectors are critical for atmospheric carbon dioxide profiling using the lidar technique. The characterization results of a novel infrared AlGaAsSb/ InGaAsSb phototransistor are reported. Emitter dark current variation with the collector-emitter voltage at different temperatures is acquired to examine the gain mechanism. Spectral response measurements resulted in responsivity as high as 2650 A/W at 2.05 microns wavelength. Bias voltage and temperature effects on the device responsivity are presented. The detectivity of this device is compared to InGaAs and HgCdTe devices.

Novel Infrared Phototransistors for Atmospheric CO2 Profiling at 2 Micron Wavelength

NASA Technical Reports Server (NTRS)

Refaat, Tamer F.; Abedin, M. Nurul; Sulima, Oleg V.; Singh, Upendra N.; Ismail, Syed

2004-01-01

Two-micron detectors are critical for atmospheric carbon dioxide profiling using the lidar technique. The characterization results of a novel infrared AlGaAsSb/ InGaAsSb phototransistor are reported. Emitter dark current variation with the collector-emitter voltage at different temperatures is acquired to examine the gain mechanism. Spectral response measurements resulted in responsivity as high as 2650 A/W at 2.05 m wavelength. Bias voltage and temperature effects on the device responsivity are presented. The detectivity of this device is compared to InGaAs and HgCdTe devices.

Plasma characteristics in the discharge region of a 20 A emission current hollow cathode

NASA Astrophysics Data System (ADS)

Mingming, SUN; Tianping, ZHANG; Xiaodong, WEN; Weilong, GUO; Jiayao, SONG

2018-02-01

Numerical calculation and fluid simulation methods were used to obtain the plasma characteristics in the discharge region of the LIPS-300 ion thruster’s 20 A emission current hollow cathode and to verify the structural design of the emitter. The results of the two methods indicated that the highest plasma density and electron temperature, which improved significantly in the orifice region, were located in the discharge region of the hollow cathode. The magnitude of plasma density was about 1021 m-3 in the emitter and orifice regions, as obtained by numerical calculations, but decreased exponentially in the plume region with the distance from the orifice exit. Meanwhile, compared to the emitter region, the electron temperature and current improved by about 36% in the orifice region. The hollow cathode performance test results were in good agreement with the numerical calculation results, which proved that that the structural design of the emitter and the orifice met the requirements of a 20 A emission current. The numerical calculation method can be used to estimate plasma characteristics in the preliminary design stage of hollow cathodes.

Effect of low temperature oxidation (LTO) in reducing boron skin in boron spin on dopant diffused emitter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singha, Bandana; Solanki, Chetan Singh

Formation of boron skin is an unavoidable phenomenon in p-type emitter formation with boron dopant source. The boron skin thickness is generally less than 100 nm and difficult to remove by chemical and physical means. Low temperature oxidation (LTO) used in this work is useful in removing boron skin thickness up to 30 nm and improves the emitter performance. The effective minority carrier lifetime gets improved by more than 30% after using LTO and leakage current of the emitter gets lowered by 100 times thereby showing the importance of low temperature oxidation in boron spin on dopant diffused emitters.

Rare earth garnet selective emitter

NASA Technical Reports Server (NTRS)

Lowe, Roland A.; Chubb, Donald L.; Farmer, Serene C.; Good, Brian S.

1994-01-01

Thin film Ho-YAG and Er-YAG emitters with a platinum substrate exhibit high spectral emittance in the emission band (epsilon(sub lambda) approximately equal to 0.74, ((4)l(sub 15/2)) - ( (4)l(sub13/2)), for Er-YAG and epsilon(sub lambda) approximately equal to 0.65, ((5)l(sub 7))-((5)l(sub 8)) for Ho-YAG) at excellent candidates for high efficiency selective emitters in the thermophotovoltaics (TPV) systems operating at moderate temperatures (1200-1500K). Spectral emittance measurements of the thin films were made (1.2 less than lambda less than 3.0 microns) and compared to the theoretical emittances calculated using measured values of the spectral extinction coefficient. In this paper we present the results for a new class of rare earth ion selective emitters. These emitters are thin sections (less than 1 mm) of yttrium aluminum garnet (YAG) single crystal with a rare earth substitutional impurity. This paper presents normal spectral emittance, epsilon(sub lambda), measurements of holmium (Ho), and erbium (Er) doped YAG thin film selective emitters at 1500 K, and compares those results with the theoretical spectral emittance.

High-Precision Half-Life Measurement for the Superallowed β+ Emitter Alm26

NASA Astrophysics Data System (ADS)

Finlay, P.; Ettenauer, S.; Ball, G. C.; Leslie, J. R.; Svensson, C. E.; Andreoiu, C.; Austin, R. A. E.; Bandyopadhyay, D.; Cross, D. S.; Demand, G.; Djongolov, M.; Garrett, P. E.; Green, K. L.; Grinyer, G. F.; Hackman, G.; Leach, K. G.; Pearson, C. J.; Phillips, A. A.; Sumithrarachchi, C. S.; Triambak, S.; Williams, S. J.

2011-01-01

A high-precision half-life measurement for the superallowed β+ emitter Alm26 was performed at the TRIUMF-ISAC radioactive ion beam facility yielding T1/2=6346.54±0.46stat±0.60systms, consistent with, but 2.5 times more precise than, the previous world average. The Alm26 half-life and ft value, 3037.53(61) s, are now the most precisely determined for any superallowed β decay. Combined with recent theoretical corrections for isospin-symmetry-breaking and radiative effects, the corrected Ft value for Alm26, 3073.0(12) s, sets a new benchmark for the high-precision superallowed Fermi β-decay studies used to test the conserved vector current hypothesis and determine the Vud element of the Cabibbo-Kobayashi-Maskawa quark mixing matrix.

An overview of negative hydrogen ion sources for accelerators

NASA Astrophysics Data System (ADS)

Faircloth, Dan; Lawrie, Scott

2018-02-01

An overview of high current (>1 mA) negative hydrogen ion (H-) sources that are currently used on particle accelerators. The current understanding of how H- ions are produced is summarised. Issues relating to caesium usage are explored. The different ways of expressing emittance and beam currents are clarified. Source technology naming conventions are defined and generalised descriptions of each source technology are provided. Examples of currently operating sources are outlined, with their current status and future outlook given. A comparative table is provided.

Base and collector resistances in heterojunction bipolar transistors

NASA Astrophysics Data System (ADS)

Anholt, R.; Bozada, C.; Desalvo, G.; Dettmer, R.; Ebel, J.; Gillespie, J.; Jenkins, T.; Havasy, C.; Ito, C.; Nakano, K.; Pettiford, C.; Quach, T.; Sewell, J.; Via, D.

1997-11-01

In heterojunction bipolar transistors (HBTs), the reverse base currents flow from the outer base periphery to the collector. The reverse base and collector resistances are therefore dominated by contact resistance, which is inversely proportional to the outer base and inner collector periphery lengths which are larger than the emitter lengths when the base and collector electrodes surround the emitter element. These resistances can be extracted from reverse Gummel (current vs Vbc with Vbc = 0) and from measurements of output resistances at zero collector voltage sweeps. We compare models with measurements where the base and collector peripheries decrease with increasing emitter diameters.

Emittance Measurements Relevant to a 250 W(sub t) Class RTPV Generator for Space Exploration

NASA Technical Reports Server (NTRS)

Wolford, Dave; Chubb, Donald; Clark, Eric; Pal, Anna Maria; Scheiman, Dave; Colon, Jack

2009-01-01

A proposed 250 Wt Radioisotope Thermophotovoltaic (RTPV) power system for utilization in lunar exploration and the subsequent exploration of Mars is described. Details of emitter selection are outlined for use in a maintenance free power supply that is productive over a 14-year mission life. Thorough knowledge of a material s spectral emittance is essential for accurate modeling of the RTPV system. While sometimes treated as a surface effect, emittance involves radiation from within a material. This creates a complex thermal gradient which is a combination of conductive and radiative heat transfer mechanisms. Emittance data available in the literature is a valuable resource but it is particular to the test sample s physical characteristics and the test environment. Considerations for making spectral emittance measurements relevant to RTPV development are discussed. Measured spectral emittance data of refractory emitter materials is given. Planned measurement system modifications to improve relevance to the current project are presented.

High efficiency thermionic converter studies

NASA Technical Reports Server (NTRS)

Huffman, F. N.; Sommer, A. H.; Balestra, C. L.; Briere, D. P.; Oettinger, P. E.

1976-01-01

The objective is to improve thermionic converter performance by means of reduced interelectrode losses, greater emitter capabilities, and lower collector work functions until the converter performance level is suitable for out-of-core space reactors and radioisotope generators. Electrode screening experiments have identified several promising collector materials. Back emission work function measurements of a ZnO collector in a thermionic diode have given values less than 1.3 eV. Diode tests were conducted over the range of temperatures of interest for space power applications. Enhanced mode converter experiments have included triodes operated in both the surface ionization and plasmatron modes. Pulsed triodes were studied as a function of pulse length, pulse potential, inert gas fill pressure, cesium pressure, spacing, emitter temperature and collector temperature. Current amplifications (i.e., mean output current/mean grid current) of several hundred were observed up to output current densities of one amp/sq cm. These data correspond to an equivalent arc drop less than 0.1 eV.

Arrays of Bundles of Carbon Nanotubes as Field Emitters

NASA Technical Reports Server (NTRS)

Manohara, Harish; Bronkowski, Michael

2007-01-01

Experiments have shown that with suitable choices of critical dimensions, planar arrays of bundles of carbon nanotubes (see figure) can serve as high-current-density field emitter (cold-cathode) electron sources. Whereas some hot-cathode electron sources must be operated at supply potentials of thousands of volts, these cold-cathode sources generate comparable current densities when operated at tens of volts. Consequently, arrays of bundles of carbon nanotubes might prove useful as cold-cathode sources in miniature, lightweight electron-beam devices (e.g., nanoklystrons) soon to be developed. Prior to the experiments, all reported efforts to develop carbon-nanotube-based field-emission sources had yielded low current densities from a few hundred microamperes to a few hundred milliamperes per square centimeter. An electrostatic screening effect, in which taller nanotubes screen the shorter ones from participating in field emission, was conjectured to be what restricts the emission of electrons to such low levels. It was further conjectured that the screening effect could be reduced and thus emission levels increased by increasing the spacing between nanotubes to at least by a factor of one to two times the height of the nanotubes. While this change might increase the emission from individual nanotubes, it would decrease the number of nanotubes per unit area and thereby reduce the total possible emission current. Therefore, to maximize the area-averaged current density, it would be necessary to find an optimum combination of nanotube spacing and nanotube height. The present concept of using an array of bundles of nanotubes arises partly from the concept of optimizing the spacing and height of field emitters. It also arises partly from the idea that single nanotubes may have short lifetimes as field emitters, whereas bundles of nanotubes could afford redundancy so that the loss of a single nanotube would not significantly reduce the overall field emission.

Optimization of solenoid based low energy beam transport line for high current H+ beams

NASA Astrophysics Data System (ADS)

Pande, R.; Singh, P.; Rao, S. V. L. S.; Roy, S.; Krishnagopal, S.

2015-02-01

A 20 MeV, 30 mA CW proton linac is being developed at BARC, Mumbai. This linac will consist of an ECR ion source followed by a Radio Frequency Quadrupole (RFQ) and Drift tube Linac (DTL). The low energy beam transport (LEBT) line is used to match the beam from the ion source to the RFQ with minimum beam loss and increase in emittance. The LEBT is also used to eliminate the unwanted ions like H2+ and H3+ from entering the RFQ. In addition, space charge compensation is required for transportation of such high beam currents. All this requires careful design and optimization. Detailed beam dynamics simulations have been done to optimize the design of the LEBT using the Particle-in-cell code TRACEWIN. We find that with careful optimization it is possible to transport a 30 mA CW proton beam through the LEBT with 100% transmission and minimal emittance blow up, while at the same time suppressing unwanted species H2+ and H3+ to less than 3.3% of the total beam current.

Robust Low-Cost Cathode for Commercial Applications

NASA Technical Reports Server (NTRS)

Patterson, Michael J.

2007-01-01

Under funding from the NASA Commercial Technology Office, a cathode assembly was designed, developed, fabricated, and tested for use in plasma sources for ground-based materials processing applications. The cathode development activity relied on the large prior NASA investment and successful development of high-current, high-efficiency, long-life hollow cathodes for use on the International Space Station Plasma Contactor System. The hollow cathode was designed and fabricated based on known engineering criteria and manufacturing processes for compatibility with the requirements of the plasma source. The transfer of NASA GRC-developed hollow cathode technology for use as an electron emitter in the commercial plasma source is anticipated to yield a significant increase in process control, while eliminating the present issues of electron emitter lifetime and contamination.

Efficient fabrication of carbon nanotube micro tip arrays by tailoring cross-stacked carbon nanotube sheets.

PubMed

Wei, Yang; Liu, Peng; Zhu, Feng; Jiang, Kaili; Li, Qunqing; Fan, Shoushan

2012-04-11

Carbon nanotube (CNT) micro tip arrays with hairpin structures on patterned silicon wafers were efficiently fabricated by tailoring the cross-stacked CNT sheet with laser. A blade-like structure was formed at the laser-cut edges of the CNT sheet. CNT field emitters, pulled out from the end of the hairpin by an adhesive tape, can provide 150 μA intrinsic emission currents with low beam noise. The nice field emission is ascribed to the Joule-heating-induced desorption of the emitter surface by the hairpin structure, the high temperature annealing effect, and the surface morphology. The CNT emitters with hairpin structures will greatly promote the applications of CNTs in vacuum electronic devices and hold the promises to be used as the hot tips for thermochemical nanolithography. More CNT-based structures and devices can be fabricated on a large scale by this versatile method. © 2012 American Chemical Society

Development of a Robust, High Current, Low Power Field Emission Electron Gun for a Spaceflight Reflectron Time-of-Flight Mass Spectrometer

NASA Technical Reports Server (NTRS)

Southard, Adrian E.; Getty, Stephanie A.; Feng, Steven; Glavin, Daniel P.; Auciello, Orlando; Sumant, Anirudha

2012-01-01

Carbon materials, including carbon nanotubes (CNTs) and nitrogen-incorporated ultrananocrystalline diamond (N-UNCD), have been of considerable interest for field emission applications for over a decade. In particular, robust field emission materials are compelling for space applications due to the low power consumption and potential for miniaturization. A reflectron time-of-flight mass spectrometer (TOF-MS) under development for in situ measurements on the Moon and other Solar System bodies uses a field emitter to generate ions from gaseous samples, using electron ionization. For these unusual environments, robustness, reliability, and long life are of paramount importance, and to this end, we have explored the field emission properties and lifetime of carbon nanotubes and nitrogen-incorporated ultrananocrystalline diamond (N-UNCD) thin films, the latter developed and patented by Argonne National Laboratory. We will present recent investigations of N-UNCD as a robust field emitter, revealing that this material offers stable performance in high vacuum for up to 1000 hours with threshold voltage for emission of about 3-4 V/lJm and current densities in the range of tens of microA. Optimizing the mass resolution and sensitivity of such a mass spectrometer has also been enabled by a parallel effort to scale up a CNT emitter to an array measuring 2 mm x 40 mm. Through simulation and experiment of the new extended format emitter, we have determined that focusing the electron beam is limited due to the angular spread of the emitted electrons. This dispersion effect can be reduced through modification of the electron gun geometry, but this reduces the current reaching the ionization region. By increasing the transmission efficiency of the electron beam to the anode, we have increased the anode current by two orders of magnitude to realize a corresponding enhancement in instrument sensitivity, at a moderate cost to mass resolution. We will report recent experimental and modeling results to describe the performance of a field emission electron gun as employed in the Volatile Analysis by Pyrolysis of Regolith (VAPoR) TOF-MS prototype.

Fabrication and electrical characterization of planar lighting devices with Cs3Sb photocathode emitters

NASA Astrophysics Data System (ADS)

Jeong, Hyo-Soo; Keller, Kris; Culkin, Brad

2017-03-01

Non-vacuum process technology was used to produce Cs3Sb photocathodes on substrates, and in-situ panel devices were fabricated. The performance of the devices was characterized by measuring the anode current as functions of the devices' operation times. An excitation light source with a 475-nm wavelength was used for the photocathodes. The device has a simple diode structure, providing unique characteristics such as a large gap, vertical electron beam directionality, and resistance to surface contamination from ion bombardment and poisoning by outgassing species. Accordingly, Cs3Sb photocathodes function as flat emitters, and the emission properties of the photocathode emitters depend on the vacuum level of the devices. An improved current stability has been observed after conducting an electrical conditioning process to remove possible adsorbates on the Cs3Sb flat emitters.

Photosensitivity of p-type black Si field emitter arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mingels, S., E-mail: smingels@uni-wuppertal.de; Porshyn, V.; Lützenkirchen-Hecht, D.

We have investigated the properties of black Si field emitter arrays under strong electric fields and laser illumination. A low onset field of 1.8 MV/m for an emission current of 1 nA was obtained. A pronounced saturation region of the dark and photo-enhanced current was observed, which provided a short-term stability of 0.1% at 0.4 μA and 0.7% at 1.0 μA, respectively. As maximum value for the photosensitivity, an on-off current switching ratio of 43 reaching about 13 μA was achieved at a laser power of 15 mW. Electron spectra in the dark and under laser illumination are presented, showing a current and light-sensitivemore » voltage drop across the emitters as well as hints for hot electron emission.« less

Versatile benzimidazole/triphenylamine hybrids: efficient nondoped deep-blue electroluminescence and good host materials for phosphorescent emitters.

PubMed

Gong, Shaolong; Zhao, Yongbiao; Wang, Meng; Yang, Chuluo; Zhong, Cheng; Qin, Jingui; Ma, Dongge

2010-09-03

Two new bipolar compounds, N,N,N',N'-tetraphenyl-5'-(1-phenyl-1H-benzimidazol-2-yl)-1,1':3',1''-terphenyl-4,4''-diamine (1) and N,N,N',N'-tetraphenyl-5'-(1-phenyl-1H-benzimidazol-2-yl)-1,1':3',1''-terphenyl-3,3''-diamine (2), were synthesized and characterized, and their thermal, photophysical, and electrochemical properties were investigated. Compounds 1 and 2 possess good thermal stability with high glass-transition temperatures of 109-129 degrees C and thermal decomposition temperatures of 501-531 degrees C. The fluorescence quantum yield of 1 (0.52) is higher than that of 2 (0.16), which could be attributed to greater pi conjugation between the donor and acceptor moieties. A nondoped deep-blue fluorescent organic light-emitting diode (OLED) using 1 as the blue emitter displays high performance, with a maximum current efficiency of 2.2 cd A(-1) and a maximum external efficiency of 2.9 % at the CIE coordinates of (0.17, 0.07) that are very close to the National Television System Committee's blue standard (0.15, 0.07). Electrophosphorescent devices using the two compounds as host materials for green and red phosphor emitters show high efficiencies. The best performance of a green phosphorescent device was achieved using 2 as the host, with a maximum current efficiency of 64.3 cd A(-1) and a maximum power efficiency of 68.3 lm W(-1); whereas the best performance of a red phosphorescent device was achieved using 1 as the host, with a maximum current efficiency of 11.5 cd A(-1), and a maximum power efficiency of 9.8 lm W(-1). The relationship between the molecular structures and optoelectronic properties are discussed.

Measurement of transverse emittance and coherence of double-gate field emitter array cathodes

PubMed Central

Tsujino, Soichiro; Das Kanungo, Prat; Monshipouri, Mahta; Lee, Chiwon; Miller, R.J. Dwayne

2016-01-01

Achieving small transverse beam emittance is important for high brightness cathodes for free electron lasers and electron diffraction and imaging experiments. Double-gate field emitter arrays with on-chip focussing electrode, operating with electrical switching or near infrared laser excitation, have been studied as cathodes that are competitive with photocathodes excited by ultraviolet lasers, but the experimental demonstration of the low emittance has been elusive. Here we demonstrate this for a field emitter array with an optimized double-gate structure by directly measuring the beam characteristics. Further we show the successful application of the double-gate field emitter array to observe the low-energy electron beam diffraction from suspended graphene in minimal setup. The observed low emittance and long coherence length are in good agreement with theory. These results demonstrate that our all-metal double-gate field emitters are highly promising for applications that demand extremely low-electron bunch-phase space volume and large transverse coherence. PMID:28008918

Measurement of transverse emittance and coherence of double-gate field emitter array cathodes

NASA Astrophysics Data System (ADS)

Tsujino, Soichiro; Das Kanungo, Prat; Monshipouri, Mahta; Lee, Chiwon; Miller, R. J. Dwayne

2016-12-01

Achieving small transverse beam emittance is important for high brightness cathodes for free electron lasers and electron diffraction and imaging experiments. Double-gate field emitter arrays with on-chip focussing electrode, operating with electrical switching or near infrared laser excitation, have been studied as cathodes that are competitive with photocathodes excited by ultraviolet lasers, but the experimental demonstration of the low emittance has been elusive. Here we demonstrate this for a field emitter array with an optimized double-gate structure by directly measuring the beam characteristics. Further we show the successful application of the double-gate field emitter array to observe the low-energy electron beam diffraction from suspended graphene in minimal setup. The observed low emittance and long coherence length are in good agreement with theory. These results demonstrate that our all-metal double-gate field emitters are highly promising for applications that demand extremely low-electron bunch-phase space volume and large transverse coherence.

STABILIZED TRANSISTOR AMPLIFIER

DOEpatents

Noe, J.B.

1963-05-01

A temperature stabilized transistor amplifier having a pair of transistors coupled in cascade relation that are capable of providing amplification through a temperature range of - 100 un. Concent 85% F to 400 un. Concent 85% F described. The stabilization of the amplifier is attained by coupling a feedback signal taken from the emitter of second transistor at a junction between two serially arranged biasing resistances in the circuit of the emitter of the second transistor to the base of the first transistor. Thus, a change in the emitter current of the second transistor is automatically corrected by the feedback adjustment of the base-emitter potential of the first transistor and by a corresponding change in the base-emitter potential of the second transistor. (AEC)

Progress in reliable single emitters and laser bars for efficient CW-operation in the near-infrared emission range

NASA Astrophysics Data System (ADS)

Zorn, Martin; Hülsewede, Ralf; Pietrzak, Agnieszka; Meusel, Jens; Sebastian, Jürgen

2015-03-01

Laser bars, laser arrays, and single emitters are highly-desired light sources e.g. for direct material processing, pump sources for solid state and fiber lasers or medical applications. These sources require high output powers with optimal efficiency together with good reliability resulting in a long lifetime of the device. Desired wavelengths range from 760 nm in esthetic skin treatment over 915 nm, 940 nm and 976 nm to 1030 nm for direct material processing and pumping applications. In this publication we present our latest developments for the different application-defined wavelengths in continuouswave operation mode. At 760nm laser bars with 30 % filling factor and 1.5 mm resonator length show optical output powers around 90-100 W using an optimized design. For longer wavelengths between 915 nm and 1030 nm laser bars with 4 mm resonator length and 50 % filling factor show reliable output powers above 200 W. The efficiency reached lies above 60% and the slow axis divergence (95% power content) is below 7°. Further developments of bars tailored for 940 nm emission wavelength reach output powers of 350 W. Reliable single emitters for effective fiber coupling having emitter widths of 90 μm and 195 μm are presented. They emit optical powers of 12 W and 24 W, respectively, at emission wavelengths of 915 nm, 940 nm and 976 nm. Moreover, reliability tests of 90 μm-single emitters at a power level of 12W currently show a life time over 3500 h.

High power telecommunication-compatible photoconductive terahertz emitters based on plasmonic nano-antenna arrays.

PubMed

Yardimci, Nezih Tolga; Lu, Hong; Jarrahi, Mona

2016-11-07

We present a high-power and broadband photoconductive terahertz emitter operating at telecommunication optical wavelengths, at which compact and high-performance fiber lasers are commercially available. The presented terahertz emitter utilizes an ErAs:InGaAs substrate to achieve high resistivity and short carrier lifetime characteristics required for robust operation at telecommunication optical wavelengths. It also uses a two-dimensional array of plasmonic nano-antennas to offer significantly higher optical-to-terahertz conversion efficiencies compared to the conventional photoconductive emitters, while maintaining broad operation bandwidths. We experimentally demonstrate pulsed terahertz radiation over 0.1-5 THz frequency range with the power levels as high as 300  μ W. This is the highest-reported terahertz radiation power from a photoconductive emitter operating at telecommunication optical wavelengths.

High power telecommunication-compatible photoconductive terahertz emitters based on plasmonic nano-antenna arrays

PubMed Central

Yardimci, Nezih Tolga; Lu, Hong; Jarrahi, Mona

2016-01-01

We present a high-power and broadband photoconductive terahertz emitter operating at telecommunication optical wavelengths, at which compact and high-performance fiber lasers are commercially available. The presented terahertz emitter utilizes an ErAs:InGaAs substrate to achieve high resistivity and short carrier lifetime characteristics required for robust operation at telecommunication optical wavelengths. It also uses a two-dimensional array of plasmonic nano-antennas to offer significantly higher optical-to-terahertz conversion efficiencies compared to the conventional photoconductive emitters, while maintaining broad operation bandwidths. We experimentally demonstrate pulsed terahertz radiation over 0.1–5 THz frequency range with the power levels as high as 300 μW. This is the highest-reported terahertz radiation power from a photoconductive emitter operating at telecommunication optical wavelengths. PMID:27916999

Point-like neutron source based on high-current electron cyclotron resonance ion source with powerful millimeter wave plasma heating

NASA Astrophysics Data System (ADS)

Golubev, S. V.; Skalyga, V. A.; Izotov, I. V.; Sidorov, A. V.

2018-01-01

A possibility of an intense deuterium ion beam creation for a compact powerful point-like neutron source is discussed. The fusion takes place due to bombardment of deuterium (or tritium) loaded target by high-current focused deuterium ion beam with energy of 100 keV. The ways of high-current and low emittance ion beam formation from the plasma of quasi-gasdynamic ion source of a new generation based on an electron cyclotron resonance discharge in an open magnetic trap sustained by powerful microwave radiation are investigated.

Radiation tolerant compact image sensor using CdTe photodiode and field emitter array (Conference Presentation)

NASA Astrophysics Data System (ADS)

Masuzawa, Tomoaki; Neo, Yoichiro; Mimura, Hidenori; Okamoto, Tamotsu; Nagao, Masayoshi; Akiyoshi, Masafumi; Sato, Nobuhiro; Takagi, Ikuji; Tsuji, Hiroshi; Gotoh, Yasuhito

2016-10-01

A growing demand on incident detection is recognized since the Great East Japan Earthquake and successive accidents in Fukushima nuclear power plant in 2011. Radiation tolerant image sensors are powerful tools to collect crucial information at initial stages of such incidents. However, semiconductor based image sensors such as CMOS and CCD have limited tolerance to radiation exposure. Image sensors used in nuclear facilities are conventional vacuum tubes using thermal cathodes, which have large size and high power consumption. In this study, we propose a compact image sensor composed of a CdTe-based photodiode and a matrix-driven Spindt-type electron beam source called field emitter array (FEA). A basic principle of FEA-based image sensors is similar to conventional Vidicon type camera tubes, but its electron source is replaced from a thermal cathode to FEA. The use of a field emitter as an electron source should enable significant size reduction while maintaining high radiation tolerance. Current researches on radiation tolerant FEAs and development of CdTe based photoconductive films will be presented.

Long-lived and highly efficient green and blue phosphorescent emitters and device architectures for OLED displays

NASA Astrophysics Data System (ADS)

Eickhoff, Christian; Murer, Peter; Geßner, Thomas; Birnstock, Jan; Kröger, Michael; Choi, Zungsun; Watanabe, Soichi; May, Falk; Lennartz, Christian; Stengel, Ilona; Münster, Ingo; Kahle, Klaus; Wagenblast, Gerhard; Mangold, Hannah

2015-09-01

In this paper, two OLED device concepts are introduced. First, classical phosphorescent green carbene emitters with unsurpassed lifetime, combined with low voltage and high efficiency are presented and the associated optimized OLED stacks are explained. Second, a path towards highly efficient, long-lived deep blue systems is shown. The high efficiencies can be reached by having the charge-recombination on the phosphorescent carbene emitter while at the same time short emissive lifetimes are realized by fast energy transfer to the fluorescent emitter, which eventually allows for higher OLED stability in the deep blue. Device architectures, materials and performance data are presented showing that carbene type emitters have the potential to outperform established phosphorescent green emitters both in terms of lifetime and efficiency. The specific class of green emitters under investigation shows distinctly larger electron affinities (2.1 to 2.5 eV) and ionization potentials (5.6 to 5.8 eV) as compared to the "standard" emitter Ir(ppy)3 (5.0/1.6 eV). This difference in energy levels requires an adopted OLED design, in particular with respect to emitter hosts and blocking layers. Consequently, in the diode setup presented here, the emitter species is electron transporting or electron trapping. For said green carbene emitters, the typical peak wavelength is 525 nm yielding CIE color coordinates of (x = 0.33, y = 0.62). Device data of green OLEDs are shown with EQEs of 26 %. Driving voltage at 1000 cd/m2 is below 3 V. In an optimized stack, a device lifetime of LT95 > 15,000 h (1000 cd/m2) has been reached, thus fulfilling AMOLED display requirements.

Transport and emittance study for 18 GHz superconducting-ECR ion source at RCNP.

PubMed

Yorita, T; Hatanaka, K; Fukuda, M; Ueda, H; Kibayashi, M; Morinobu, S; Tamii, A

2012-02-01

As the upgrade program of the azimuthally varying field (AVF) cyclotron is at the cyclotron facility of the RCNP, Osaka University for the improvement of the quality, stability, and intensity of accelerated beams, an 18 GHz superconducting (SC) ECR ion source has been installed to increase beam currents and to extend the variety of ions, especially for highly charged heavy ions which can be accelerated by RCNP AVF cyclotron. The production development of several ions such as B, O, N, Ne, Ar, Ni, Kr, and Xe has been performed by Yorita et al. [Rev. Sci. Instrum. 79, 02A311(2008); 81, 02A332 (2010)]. Further studies for the beam transport have been done in order to improve the beam current more for injection of cyclotron. The effect of field leakage of AVF main coil is not negligible and additional steering magnet has been installed and then beam transmission has been improved. The emittance monitor has also been developed for the purpose of investigating correlation between emittance of beam from ECR ion sources and injection efficiency. The monitor consists with BPM82 with rotating wire for fast measurement for efficient study.

Computer acquired performance data from a chemically vapor-deposited-rhenium, niobium planar diode

NASA Technical Reports Server (NTRS)

Manista, E. J.; Morris, J. F.; Smith, A. L.; Lancashire, R. B.

1973-01-01

Performance data from a chemically vapor-deposited-rhenium, niobium thermionic converter are presented. The planar converter has a guard-ringed collector and a nominal fixed spacing of 0.25 mm (10 mils). The data were obtained by using a computerized acquisition system and are available on request to one of the authors on microfiche as individual and composite parametric current, voltage curves. The parameters are the temperatures of the emitter T sub E collector T sub C, and cesium reservoir T sub R. The composite plots have constant T sub E and varying T sub C or T sub R, or both. Current, voltage envelopes having constant T sub E with and without fixed T sub C appear in the present report. The diode was tested at increments between 1600 and 2000 K for the emitter Hohlraum, 800 to 1100 K for the collector, and 540 and 650 K for the reservoir. A total of 312 current, voltage curves were obtained in the present performance evaluation. Current, voltage envelopes from three rhenium emitter converters evaluated in the present program are also given. The data are compared at commom emitter Hohlraum temperatures.

Vertically aligned carbon nanotube emitter on metal foil for medical X-ray imaging.

PubMed

Ryu, Je Hwang; Kim, Wan Sun; Lee, Seung Ho; Eom, Young Ju; Park, Hun Kuk; Park, Kyu Chang

2013-10-01

A simple method is proposed for growing vertically aligned carbon nanotubes on metal foil using the triode direct current plasma-enhanced chemical vapor deposition (PECVD). The carbon nanotube (CNT) electron emitter was fabricated using fewer process steps with an acid treated metal substrate. The CNT emitter was used for X-ray generation, and the X-ray image of mouse's joint was obtained with an anode current of 0.5 mA at an anode bias of 60 kV. The simple fabrication of a well-aligned CNT with a protection layer on metal foil, and its X-ray application, were studied.

Effect of longitudinal aberration in an ion-optical system on the properties of a focused beam

DOE Office of Scientific and Technical Information (OSTI.GOV)

Getmanov, V.N.; Ikryanov, I.M.; Savchenko, O.Ya.

1994-11-01

Modelling of the processes involved in the passage of a beam through a system of high-voltage electrodes with allowance made for the thermal and grid spreads of transverse particle velocities constitutes a three-dimensional problem that is difficult to solve with modern computers. In the present work, an analytic method has been developed that reduces this problem to a two-dimensional one. The method corresponds to approximating a marked longitudinal aberration in an ion-optical system (IOS), when the effective emittance of the beam during its high-voltage shaping increases severalfold, this being characteristic of all IOS know thus far. Fully justified in thismore » case is the statement that a unique relationship exists between the coordinates r and z, which respectively characterize the location of the particle on the emitter and the point of intersection of the axis by the particle (or the point of maximum approach of the particle to the axis), and also between r and {alpha} ({alpha}being the angle between the particle trajectory in the focusing region and the axis of the system). This statement leads to a hyperbolic law of increase in current density in the central portion of the focused beam and thus confirms the validity of this law. The calculations were compared with experimental data on the focusing of a 0.4-MeV proton beam with a current of 20-75 mA and a diameter of 2-5 mm in the crossover under conditions in which the effective emittance of the beam, as a result of aberrations during its high-voltage shaping, increased by a factor of 3 or more (in kilovolts), and the calculated trajectories for 20 of 40 mm at the emitter are shown, where the markers D8 and D9 denote the positions of multiwire beam profile sensors.« less

Toward a systematic design theory for silicon solar cells using optimization techniques

NASA Technical Reports Server (NTRS)

Misiakos, K.; Lindholm, F. A.

1986-01-01

This work is a first detailed attempt to systematize the design of silicon solar cells. Design principles follow from three theorems. Although the results hold only under low injection conditions in base and emitter regions, they hold for arbitrary doping profiles and include the effects of drift fields, high/low junctions and heavy doping concentrations of donor or acceptor atoms. Several optimal designs are derived from the theorems, one of which involves a three-dimensional morphology in the emitter region. The theorems are derived from a nonlinear differential equation of the Riccati form, the dependent variable of which is a normalized recombination particle current.

Hybrid-mode read-in integrated circuit for infrared scene projectors

NASA Astrophysics Data System (ADS)

Cho, Min Ji; Shin, Uisub; Lee, Hee Chul

2017-05-01

The infrared scene projector (IRSP) is a tool for evaluating infrared sensors by producing infrared images. Because sensor testing with IRSPs is safer than field testing, the usefulness of IRSPs is widely recognized at present. The important performance characteristics of IRSPs are the thermal resolution and the thermal dynamic range. However, due to an existing trade-off between these requirements, it is often difficult to find a workable balance between them. The conventional read-in integrated circuit (RIIC) can be classified into two types: voltage-mode and current-mode types. An IR emitter driven by a voltage-mode RIIC offers a fine thermal resolution. On the other hand, an emitter driven by the current-mode RIIC has the advantage of a wide thermal dynamic range. In order to provide various scenes, i.e., from highresolution scenes to high-temperature scenes, both of the aforementioned advantages are required. In this paper, a hybridmode RIIC which is selectively operated in two modes is proposed. The mode-selective characteristic of the proposed RIIC allows users to generate high-fidelity scenes regardless of the scene content. A prototype of the hybrid-mode RIIC was fabricated using a 0.18-μm 1-poly 6-metal CMOS process. The thermal range and the thermal resolution of the IR emitter driven by the proposed circuit were calculated based on measured data. The estimated thermal dynamic range of the current mode was from 261K to 790K, and the estimated thermal resolution of the voltage mode at 300K was 23 mK with a 12-bit gray-scale resolution.

Spindt cold cathode electron gun development program

NASA Technical Reports Server (NTRS)

Spindt, C. A.

1983-01-01

A thin film field emission cathode array and an electron gun based on this emitter array are summarized. Fabricating state of the art cathodes for testing at NASA and NRL, advancing the fabrication technology, developing wedge shaped emitters, and performing emission tests are covered. An anistropic dry etching process (reactive ion beam etching) developed that leads to increasing the packing density of the emitter tips to about 5 x 10 to the 6th power/square cm. Tests with small arrays of emitter tips having about 10 tips has demonstrated current densities of over 100 A/sq cm. Several times using cathodes having a packing density of 1.25 x 10 to the 6th power tips/sq cm. Indications are that the higher packing density achievable with the dry etch process may extend this capability to the 500 A/sq cm range and beyond. The wedge emitter geometry was developed and shown to produce emission. This geometry can (in principle) extend the current density capability of the cathodes beyond the 500 A/sq cm level. An emission microscope was built and tested for use with the cathodes.

Highly efficient deep-blue organic light emitting diode with a carbazole based fluorescent emitter

NASA Astrophysics Data System (ADS)

Sahoo, Snehasis; Dubey, Deepak Kumar; Singh, Meenu; Joseph, Vellaichamy; Thomas, K. R. Justin; Jou, Jwo-Huei

2018-04-01

High efficiency deep-blue emission is essential to realize energy-saving, high-quality display and lighting applications. We demonstrate here a deep-blue organic light emitting diode using a novel carbazole based fluorescent emitter 7-[4-(diphenylamino)phenyl]-9-(2-ethylhexyl)-9H-carbazole-2-carbonitrile (JV234). The solution processed resultant device shows a maximum luminance above 1,750 cd m-2 and CIE coordinates (0.15,0.06) with a 1.3 lm W-1 power efficiency, 2.0 cd A-1 current efficiency, and 4.1% external quantum efficiency at 100 cd m-2. The resulting deep-blue emission enables a greater than 100% color saturation. The high efficiency may be attributed to the effective host-to-guest energy transfer, suitable device architecture facilitating balanced carrier injection and low doping concentration preventing efficiency roll-off caused by concentration quenching.

Determination of lifetimes and recombination currents in p-n junction solar cells, diodes, and transistors

NASA Technical Reports Server (NTRS)

Neugroschel, A.

1981-01-01

New methods are presented and illustrated that enable the accurate determination of the diffusion length of minority carriers in the narrow regions of a solar cell or a diode. Other methods now available are inaccurate for the desired case in which the width of the region is less than the diffusion length. Once the diffusion length is determined by the new methods, this result can be combined with measured dark I-V characteristics and with small-signal admittance characteristics to enable determination of the recombination currents in each quasi-neutral region of the cell - for example, in the emitter, low-doped base, and high-doped base regions of the BSF (back-surface-field) cell. This approach leads to values for the effective surface recombination velocity of the high-low junction forming the back-surface field of BSF cells or the high-low emitter junction of HLE cells. These methods are also applicable for measuring the minority-carrier lifetime in thin epitaxial layers grown on substrates with opposite conductivity type.

Process for producing a high emittance coating and resulting article

NASA Technical Reports Server (NTRS)

Le, Huong G. (Inventor); O'Brien, Dudley L. (Inventor)

1993-01-01

Process for anodizing aluminum or its alloys to obtain a surface particularly having high infrared emittance by anodizing an aluminum or aluminum alloy substrate surface in an aqueous sulfuric acid solution at elevated temperature and by a step-wise current density procedure, followed by sealing the resulting anodized surface. In a preferred embodiment the aluminum or aluminum alloy substrate is first alkaline cleaned and then chemically brightened in an acid bath The resulting cleaned substrate is anodized in a 15% by weight sulfuric acid bath maintained at a temperature of 30.degree. C. Anodizing is carried out by a step-wise current density procedure at 19 amperes per square ft. (ASF) for 20 minutes, 15 ASF for 20 minutes and 10 ASF for 20 minutes. After anodizing the sample is sealed by immersion in water at 200.degree. F. and then air dried. The resulting coating has a high infrared emissivity of about 0.92 and a solar absorptivity of about 0.2, for a 5657 aluminum alloy, and a relatively thick anodic coating of about 1 mil.

Analytical study of beam handling and emittance control

NASA Astrophysics Data System (ADS)

Thompson, James R.; Sloan, M. L.

1993-12-01

The thrust of our research on beam handling and emittance control was to explore how one might design high current electron accelerators, with the preservation of high beam quality designed as the primary design consideration. We considered high current, induction linacs in the parameter class of the ETA/ATA accelerators at LLNL, but with improvements to the accelerator gap design and other features to permit a significant increase in the deliverable beam brightness. Our approach for beam quality control centered on the use of solenoidal magnetic focusing through such induction accelerators, together with gently-shaped (adiabatic) acceleration gaps. This approach offers several tools for the control of beam quality. The strength and axial variation in the solenoidal magnetic field may be designed, as may the length and shape of the acceleration gaps, the loading of the gaps, and the axial spacing from gap to gap. This research showed that each of these design features may individually be optimized to contribute to improved beam quality control, and by exploiting these features, it appears feasible to produce high current, high energy electron beams possessing breakthrough beam quality and brightness. Applications which have been technologically unachievable may for the first time become possible. One such application is the production of high performance free electron lasers at very short wavelengths, extending down to the optical (less than 1 micron) regime.

Analytical and numerical study of New field emitter processing for superconducting cavities

NASA Astrophysics Data System (ADS)

Volkov, Vladimir; Petrov, Victor

2018-02-01

In this article a scientific prove for a new technology to maximize the accelerating gradient in superconducting cavities by processing on higher order mode frequencies is presented. As dominant energy source the heating of field emitters by an induced rf current (rf-heating) is considered. The field emitter structure is assumed to be a chain of conductive particles, which are formed by attractive forces.

Band-to-Band Tunneling-Dominated Thermo-Enhanced Field Electron Emission from p-Si/ZnO Nanoemitters.

PubMed

Huang, Zhizhen; Huang, Yifeng; Xu, Ningsheng; Chen, Jun; She, Juncong; Deng, Shaozhi

2018-06-13

Thermo-enhancement is an effective way to achieve high performance field electron emitters, and enables the individually tuning on the emission current by temperature and the electron energy by voltage. The field emission current from metal or n-doped semiconductor emitter at a relatively lower temperature (i.e., < 1000 K) is less temperature sensitive due to the weak dependence of free electron density on temperature, while that from p-doped semiconductor emitter is restricted by its limited free electron density. Here, we developed full array of uniform individual p-Si/ZnO nanoemitters and demonstrated the strong thermo-enhanced field emission. The mechanism of forming uniform nanoemitters with well Si/ZnO mechanical joint in the nanotemplates was elucidated. No current saturation was observed in the thermo-enhanced field emission measurements. The emission current density showed about ten-time enhancement (from 1.31 to 12.11 mA/cm 2 at 60.6 MV/m) by increasing the temperature from 323 to 623 K. The distinctive performance did not agree with the interband excitation mechanism but well-fit to the band-to-band tunneling model. The strong thermo-enhancement was proposed to be benefit from the increase of band-to-band tunneling probability at the surface portion of the p-Si/ZnO nanojunction. This work provides promising cathode for portable X-ray tubes/panel, ionization vacuum gauges and low energy electron beam lithography, in where electron-dose control at a fixed energy is needed.

Method and apparatus for multispray emitter for mass spectrometry

DOEpatents

Smith, Richard D.; Tang, Keqi; Lin, Yuehe

2004-12-14

A method and apparatus that utilizes two or more emitters simultaneously to form an electrospray of a sample that is then directed into a mass spectrometer, thereby increasing the total ion current introduced into an electrospray ionization mass spectrometer, given a liquid flow rate of a sample. The method and apparatus are most conveniently constructed as an array of spray emitters fabricated on a single chip, however, the present invention encompasses any apparatus wherein two or more emitters are simultaneously utilized to form an electrospray of a sample that is then directed into a mass spectrometer.

Fibrous selective emitter structures from sol-gel process

NASA Astrophysics Data System (ADS)

Chen, K. C.

1999-03-01

Selective emitters have the potential benefit of high efficiency due to the matching of emission spectra to the response of photovoltaic (PV) cells. Continuous uniform rare-earth oxide selective emitter fibers were successfully fabricated using a viscous solution made from metal organic precursors. Cylindrical- and planar configuration emitter structures were made by direct cross-winding or stacking of precursor fiber layers. The combustion and optical performance of the planar emitter structures were tested. The results indicates that both the designing of the fiber packing density and the thickness is critical for high photon and power output.

Diagnostics for a 1.2 kA, 1 MeV, electron induction injector

NASA Astrophysics Data System (ADS)

Houck, T. L.; Anderson, D. E.; Eylon, S.; Henestroza, E.; Lidia, S. M.; Vanecek, D. L.; Westenskow, G. A.; Yu, S. S.

1998-12-01

We are constructing a 1.2 kA, 1 MeV, electron induction injector as part of the RTA program, a collaborative effort between LLNL and LBNL to develop relativistic klystrons for Two-Beam Accelerator applications. The RTA injector will also be used in the development of a high-gradient, low-emittance, electron source and beam diagnostics for the second axis of the Dual Axis Radiographic Hydrodynamic Test (DARHT) Facility. The electron source will be a 3.5″-diameter, thermionic, flat-surface, m-type cathode with a maximum shroud field stress of approximately 165 kV/cm. Additional design parameters for the injector include a pulse length of over 150 ns flat top (1% energy variation), and a normalized edge emittance of less than 200 π-mm-mr. Precise measurement of the beam parameters is required so that performance of the RTA injector can be confidently scaled to the 4 kA, 3 MeV, and 2-microsecond pulse parameters of the DARHT injector. Planned diagnostics include an isolated cathode with resistive divider for direct measurement of current emission, resistive wall and magnetic probe current monitors for measuring beam current and centroid position, capacitive probes for measuring A-K gap voltage, an energy spectrometer, and a pepperpot emittance diagnostic. Details of the injector, beam line, and diagnostics are presented.

Membrane-Based Emitter for Coupling Microfluidics with Ultrasensitive Nanoelectrospray Ionization-Mass Spectrometry

PubMed Central

Sun, Xuefei; Kelly, Ryan T.; Tang, Keqi; Smith, Richard D.

2011-01-01

An integrated poly(dimethylsiloxane) (PDMS) membrane-based microfluidic emitter for high performance nanoelectrospray ionization-mass spectrometry (nanoESI-MS) has been fabricated and evaluated. The ~100-μm-thick emitter was created by cutting a PDMS membrane that protrudes beyond the bulk substrate. The reduced surface area at the emitter enhances the electric field and reduces wetting of the surface by the electrospray solvent. As such, the emitter enables highly stable electrosprays at flow rates as low as 10 nL/min, and is compatible with electrospray solvents containing a large organic component (e.g., 90% methanol). This approach enables facile emitter construction, and provides excellent stability, reproducibility and sensitivity, as well as compatibility with multilayer soft lithography. PMID:21657269

Design and testing a high fuel volume fraction, externally finned, thermionic emitter.

NASA Technical Reports Server (NTRS)

Peelgren, M. L.; Ernst, D. M.

1971-01-01

A prototypical, high fuel volume fraction, thermionic emitter body was designed and tested. The emitter body is all tungsten, with a 1.40-cm ID, a 3.23-cm OD, and eight full-length axial fins. The emitter thickness is 0.15 cm while the fins and outer clad are 0.075 cm thick. Different methods of fabrication were used in making the test samples. Stress analysis was performed with a three-dimensional elastic code. Thermal testing of the samples, duplicating calculated radial temperature gradients, heatup and cooldown rates, and emitter body temperatures in operation, was performed with no structural failures noted (six heatup and cooldown cycles per sample). Further emitter analysis and testing is planned.

Secondary emission electron gun using external primaries

DOEpatents

Srinivasan-Rao, Triveni [Shoreham, NY; Ben-Zvi, Ilan [Setauket, NY

2009-10-13

An electron gun for generating an electron beam is provided, which includes a secondary emitter. The secondary emitter includes a non-contaminating negative-electron-affinity (NEA) material and emitting surface. The gun includes an accelerating region which accelerates the secondaries from the emitting surface. The secondaries are emitted in response to a primary beam generated external to the accelerating region. The accelerating region may include a superconducting radio frequency (RF) cavity, and the gun may be operated in a continuous wave (CW) mode. The secondary emitter includes hydrogenated diamond. A uniform electrically conductive layer is superposed on the emitter to replenish the extracted current, preventing charging of the emitter. An encapsulated secondary emission enhanced cathode device, useful in a superconducting RF cavity, includes a housing for maintaining vacuum, a cathode, e.g., a photocathode, and the non-contaminating NEA secondary emitter with the uniform electrically conductive layer superposed thereon.

Secondary emission electron gun using external primaries

DOEpatents

Srinivasan-Rao, Triveni [Shoreham, NY; Ben-Zvi, Ilan [Setauket, NY; Kewisch, Jorg [Wading River, NY; Chang, Xiangyun [Middle Island, NY

2007-06-05

An electron gun for generating an electron beam is provided, which includes a secondary emitter. The secondary emitter includes a non-contaminating negative-electron-affinity (NEA) material and emitting surface. The gun includes an accelerating region which accelerates the secondaries from the emitting surface. The secondaries are emitted in response to a primary beam generated external to the accelerating region. The accelerating region may include a superconducting radio frequency (RF) cavity, and the gun may be operated in a continuous wave (CW) mode. The secondary emitter includes hydrogenated diamond. A uniform electrically conductive layer is superposed on the emitter to replenish the extracted current, preventing charging of the emitter. An encapsulated secondary emission enhanced cathode device, useful in a superconducting RF cavity, includes a housing for maintaining vacuum, a cathode, e.g., a photocathode, and the non-contaminating NEA secondary emitter with the uniform electrically conductive layer superposed thereon.

Undulator-Based Laser Wakefield Accelerator Electron Beam Energy Spread and Emittance Diagnostic

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bakeman, M. S.; University of Nevada Reno, Reno, NV 89557; Van Tilborg, J.

The design and current status of experiments to couple the Tapered Hybrid Undulator (THUNDER) to the Lawrence Berkeley National Laboratory (LBNL) laser plasma accelerator (LPA) to measure electron beam energy spread and emittance are presented.

Determination of the efficiency of commercially available dose calibrators for beta-emitters.

PubMed

Valley, Jean-François; Bulling, Shelley; Leresche, Michel; Wastiel, Claude

2003-03-01

The goals of this investigation are to determine whether commercially available dose calibrators can be used to measure the activity of beta-emitting radionuclides used in pain palliation and to establish whether manufacturer-supplied calibration factors are appropriate for this purpose. Six types of commercially available dose calibrators were studied. Dose calibrator response was controlled for 5 gamma-emitters used for calibration or typically encountered in routine use. For the 4 most commonly used beta-emitters ((32)P, (90)Sr, (90)Y, and (169)Er) dose calibrator efficiency was determined in the syringe geometry used for clinical applications. Efficiency of the calibrators was also measured for (153)Sm and (186)Re, 2 beta-emitters with significant gamma-contributions. Source activities were traceable to national standards. All calibrators measured gamma-emitters with a precision of +/-10%, in compliance with Swiss regulatory requirements. For beta-emitters, dose calibrator intrinsic efficiency depends strongly on the maximal energy of the beta-spectrum and is notably low for (169)Er. Manufacturer-supplied calibration factors give accurate results for beta-emitters with maximal beta-energy in the middle-energy range (1 MeV) but are not appropriate for use with low-energy ((169)Er) or high-energy ((90)Y) beta-emitters. beta-emitters with significant gamma-contributions behave like gamma-emitters. Commercially available dose calibrators have an intrinsic efficiency that is sufficient for the measurement of beta-emitters, including beta-emitters with a low maximum beta-energy. Manufacturer-supplied calibration factors are reliable for gamma-emitters and beta-emitters in the middle-energy range. For low- and high-energy beta-emitters, the use of manufacturer-supplied calibration factors introduces significant measurement inaccuracy.

Study of ultra-low emittance design for SPEAR3

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, M. -H.; Huang, X.; Safranek, J.

2015-09-17

Since its 2003 construction, the SPEAR3 synchrotron light source at SLAC has continuously improved its performance by raising beam current, top-off injection, and smaller emittance. This makes SPEAR3 one of the most productive light sources in the world. Now, to further enhance the performance of SPEAR3, we are looking into the possibility of converting SPEAR3 to an ultra-low emittance storage ring within its site constraint.

Rare Earth Doped High Temperature Ceramic Selective Emitters

NASA Technical Reports Server (NTRS)

Chubb, Donald L.; Pal, AnnaMarie; Patton, Martin O.; Jenkins, Phillip P.

1999-01-01

As a result of their electron structure, rare earth ions in crystals at high temperature emit radiation in several narrow bands rather than in a continuous blackbody manner. This study develops a spectral emittance model for films of rare earth containing materials. Although there are several possible rare earth doped high temperature materials, this study was confined to rare earth aluminum garnets. Good agreement between experimental and theoretical spectral emittances was found for erbium, thulium and erbium-holmium aluminum garnets. Spectral emittances of these films are sensitive to temperature differences across the film. Emitter efficiency is also a sensitive function of temperature. For thulium aluminum garnet the efficiency is 0.38 at 1700 K but only 0.19 at 1262 K.

Low Emittance, High Brilliance Relativistic Electron Beams from a Laser-Plasma Accelerator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Brunetti, E.; Shanks, R. P.; Manahan, G. G.

2010-11-19

Progress in laser wakefield accelerators indicates their suitability as a driver of compact free-electron lasers (FELs). High brightness is defined by the normalized transverse emittance, which should be less than 1{pi} mm mrad for an x-ray FEL. We report high-resolution measurements of the emittance of 125 MeV, monoenergetic beams from a wakefield accelerator. An emittance as low as 1.1{+-}0.1{pi} mm mrad is measured using a pepper-pot mask. This sets an upper limit on the emittance, which is comparable with conventional linear accelerators. A peak transverse brightness of 5x10{sup 15} A m{sup -1} rad{sup -1} makes it suitable for compact XUVmore » FELs.« less

High Power Laser Diode Array Qualification and Guidelines for Space Flight Environments

NASA Technical Reports Server (NTRS)

Eegholm, Niels; Ott, Melanie; Stephen, Mark; Leidecker, Henning

2005-01-01

Semiconductor laser diodes emit coherent light by simulated emission generated inside the cavity formed by the cleaved end facets of a slab of semiconductor that is typically less than a millimeter in any dimension for single emitters. The diode is pumped by current injection in the p-n junction through the metallic contacts. Laser diodes emitting in the range of 0.8 micron to 1.06 micron have a wide variety of applications from pumping erbium doped fiber amplifiers, dual-clad fiber lasers, solid-state lasers used in telecom, aerospace, military, medical purposes and all the way to CD players, laser printers and other consumer and industrial products. Laser diode bars have many single emitters side by side and spaced approximately .5 mm on a single slab of semiconductor material approximately .5 mm x 10 mm. The individual emitters are connected in parallel maintaining the voltage at -2V but increasing the current to 50-100A/bar. Stacking these laser diode bars in multiple layers, 2 to 20+ high, yields high power laser diode arrays capable of emitting several hundreds of Watts. Electrically the bars are wired in series increasing the voltage by 2V/bar but maintaining the total current at 50-100A. These arrays are one of the enabling technologies for efficient, high power solid-state lasers. Traditionally these arrays are operated in QCW (Quasi CW) mode with pulse widths 10-200 (mu)s and with repetition rates of 10-200Hz. In QCW mode the wavelength and the output power of the laser reaches steady-state but the temperature does not. The advantage is a substantially higher output power than in CW mode, where the output power would be limited by the internal heating and hence the thermal and heat sinking properties of the device. The down side is a much higher thermal induced mechanical stress caused by the constant heating and cooling cycle inherent to the QCW mode.

Final cooling for a high-energy high-luminosity lepton collider

NASA Astrophysics Data System (ADS)

Neuffer, D.; Sayed, H.; Acosta, J.; Hart, T.; Summers, D.

2017-07-01

A high-energy muon collider requires a "final cooling" system that reduces transverse emittance by a factor of ~ 10, while allowing the longitudinal emittance to increase. The baseline approach has low-energy transverse cooling within high-field solenoids, with strong longitudinal heating. This approach and its recent simulation are discussed. Alternative approaches, which more explicitly include emittance exchange are also presented. Round-to-flat beam transform, transverse slicing, and longitudinal bunch coalescence are possible components of an alternative approach. Wedge-based emittance exchange could provide much of the required transverse cooling with longitudinal heating. Li-lens and quadrupole focusing systems could also provide much of the required final cooling.

Boric acid solution concentration influencing p-type emitter formation in n-type crystalline Si solar cells

NASA Astrophysics Data System (ADS)

Singha, Bandana; Singh Solanki, Chetan

2016-09-01

Boric acid (BA) is a spin on dopant (BSoD) source which is used to form p+ emitters in n-type c-Si solar cells. High purity boric acid powder (99.99% pure) when mixed with deionized (DI) water can result in high quality p-type emitter with less amount of surface defects. In this work, we have used different concentrations of boric acid solution concentrations to fabricate p-type emitters with sheet resistance values < 90 Ω/□. The corresponding junction depths for the same are less than 500 nm as measured by SIMS analysis. Boron rich layer (BRL), which is considered as detrimental in emitter performance is found to be minimal for BA solution concentration less than 2% and hence useful for p-type emitter formation.

Use of tapered Pyrex capillary tubes to increase the mechanical stability of multiwall carbon nanotubes field emitters

NASA Astrophysics Data System (ADS)

Mousa, M. S.; Bani Ali, E. S.; Hagmann, M. J.

2018-02-01

In this study, NanocylTM NC 7000 Thin Multiwall Carbon Nanotubes (MWCNTs) were used with a high aspect ratio (>150) made by the process of catalytic chemical vapor deposition (CCVD). The field emitter tips were prepared by inserting these MWCT into fine glass capillary tubes that were pulled at high temperatures and then cut. Measurements were carried out under ultra-high vacuum (UHV) conditions with a base pressure of 10-9 mbar. The data show the effects of initial conditioning of MWCNT and hysteresis. Compression of the MWCNT by the capillary tubes appears to provide adequate mechanical support without requiring the use of a low-melting point electrically-conductive binder as has been used previously. Emission currents in excess of 1 μA were obtained so this technique shows promise as a reliable, stable, powerful electron source.

High-Precision Half-Life Measurement for the Superallowed {beta}{sup +} Emitter {sup 26}Al{sup m}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Finlay, P.; Svensson, C. E.; Green, K. L.

2011-01-21

A high-precision half-life measurement for the superallowed {beta}{sup +} emitter {sup 26}Al{sup m} was performed at the TRIUMF-ISAC radioactive ion beam facility yielding T{sub 1/2}=6346.54{+-}0.46{sub stat{+-}}0.60{sub syst} ms, consistent with, but 2.5 times more precise than, the previous world average. The {sup 26}Al{sup m} half-life and ft value, 3037.53(61) s, are now the most precisely determined for any superallowed {beta} decay. Combined with recent theoretical corrections for isospin-symmetry-breaking and radiative effects, the corrected Ft value for {sup 26}Al{sup m}, 3073.0(12) s, sets a new benchmark for the high-precision superallowed Fermi {beta}-decay studies used to test the conserved vector current hypothesismore » and determine the V{sub ud} element of the Cabibbo-Kobayashi-Maskawa quark mixing matrix.« less

Patterned growth of carbon nanotubes over vertically aligned silicon nanowire bundles for achieving uniform field emission.

PubMed

Hung, Yung-Jr; Huang, Yung-Jui; Chang, Hsuan-Chen; Lee, Kuei-Yi; Lee, San-Liang

2014-01-01

A fabrication strategy is proposed to enable precise coverage of as-grown carbon nanotube (CNT) mats atop vertically aligned silicon nanowire (VA-SiNW) bundles in order to realize a uniform bundle array of CNT-SiNW heterojunctions over a large sample area. No obvious electrical degradation of as-fabricated SiNWs is observed according to the measured current-voltage characteristic of a two-terminal single-nanowire device. Bundle arrangement of CNT-SiNW heterojunctions is optimized to relax the electrostatic screening effect and to maximize the field enhancement factor. As a result, superior field emission performance and relatively stable emission current over 12 h is obtained. A bright and uniform fluorescent radiation is observed from CNT-SiNW-based field emitters regardless of its bundle periodicity, verifying the existence of high-density and efficient field emitters on the proposed CNT-SiNW bundle arrays.

Axial diffusion barriers in near-infrared nanopillar LEDs.

PubMed

Scofield, Adam C; Lin, Andrew; Haddad, Michael; Huffaker, Diana L

2014-11-12

The growth of GaAs/GaAsP axial heterostructures is demonstrated and implemented as diffusion current barriers in nanopillar light-emitting diodes at near-infrared wavelengths. The nanopillar light-emitting diodes utilize an n-GaAs/i-InGaAs/p-GaAs axial heterostructure for current injection. Axial GaAsP segments are inserted into the n- and p-GaAs portions of the nanopillars surrounding the InGaAs emitter region, acting as diffusion barriers to provide enhanced carrier confinement. Detailed characterization of growth of the GaAsP inserts and electronic band-offset measurements are used to effectively implement the GaAsP inserts as diffusion barriers. The implementation of these barriers in nanopillar light-emitting diodes provides a 5-fold increase in output intensity, making this a promising approach to high-efficiency pillar-based emitters in the near-infrared wavelength range.

Mask-less patterning of organic light emitting diodes using electrospray and selective biasing on pixel electrodes

NASA Astrophysics Data System (ADS)

Lee, Sangyeob; Koo, Hyun; Cho, Sunghwan

2015-04-01

Wet process of soluble organic light emitting diode (OLED) materials has attracted much attention due to its potential as a large-area manufacturing process with high productivity. Electrospray (ES) deposition is one of candidates of organic thin film formation process for OLED. However, to fabricate red, green, and blue emitters for color display, a fine metal mask is required during spraying emitter materials. We demonstrate a mask-less color pixel patterning process using ES of soluble OLED materials and selective biasing on pixel electrodes and a spray nozzle. We show red and green line patterns of OLED materials. It was found that selective patterning can be allowed by coulomb repulsion between nozzle and pixel. Furthermore, we fabricated blue fluorescent OLED devices by vacuum evaporation and ES processes. The device performance of ES processed OLED showed nearly identical current-voltage characteristics and slightly lower current efficiency compared to vacuum processed OLED.

Study of thermal-field emission properties and investigation of temperature dependent noise in the field emission current from vertical carbon nanotube emitters

NASA Astrophysics Data System (ADS)

Kolekar, Sadhu; Patole, S. P.; Patil, Sumati; Yoo, J. B.; Dharmadhikari, C. V.

2017-10-01

We have investigated temperature dependent field electron emission characteristics of vertical carbon nanotubes (CNTs). The generalized expression for electron emission from well-defined cathode surface is given by Millikan and Lauritsen [1] for the combination of temperature and electric field effect. The same expression has been used to explain the electron emission characteristics from vertical CNT emitters. Furthermore, this has been applied to explain the electron emission for different temperatures ranging from room temperature to 1500 K. The real-time field electron emission images at room temperature and 1500 K are recorded by using Charge Coupled Device (CCD) in order to understand the effect of temperature on distribution of electron emission spots and ring like structures in Field Emission Microscope (FEM) image. The FEM images could be used to calculate the total number of emitters per cm2 for electron emission. The calculated number of emitters per cm2 from FEM image is typically, 4.5 × 107 and the actual number emitters per cm2 present as per Atomic Force Microscopy (AFM) data is 1.2 × 1012. The measured Current-Voltage (I-V) characteristics exhibit non linear Folwer-Nordheim (F-N) type behavior. The fluctuations in the emission current were recorded at different temperatures and Fast Fourier transformed into temperature dependent power spectral density. The latter was found to obey power law relation S(f) = A(Iδ/fξ), where δ and ξ are temperature dependent current and frequency exponents respectively.

Long-Term Reliability of High Speed SiGe/Si Heterojunction Bipolar Transistors

NASA Technical Reports Server (NTRS)

Ponchak, George E. (Technical Monitor); Bhattacharya, Pallab

2003-01-01

Accelerated lifetime tests were performed on double-mesa structure Si/Si0.7Ge0.3/Si npn heterojunction bipolar transistors, grown by molecular beam epitaxy, in the temperature range of 175C-275C. Both single- and multiple finger transistors were tested. The single-finger transistors (with 5x20 micron sq m emitter area) have DC current gains approximately 40-50 and f(sub T) and f(sub MAX) of up to 22 GHz and 25 GHz, respectively. The multiple finger transistors (1.4 micron finger width, 9 emitter fingers with total emitter area of 403 micron sq m) have similar DC current gain but f(sub T) of 50 GHz. It is found that a gradual degradation in these devices is caused by the recombination enhanced impurity diffusion (REID) of boron atoms from the p-type base region and the associated formation of parasitic energy barriers to electron transport from the emitter to collector layers. This REID has been quantitatively modeled and explained, to the first order of approximation, and the agreement with the measured data is good. The mean time to failure (MTTF) of the devices at room temperature is estimated from the extrapolation of the Arrhenius plots of device lifetime versus reciprocal temperature. The results of the reliability tests offer valuable feedback for SiGe heterostructure design in order to improve the long-term reliability of the devices and circuits made with them. Hot electron induced degradation of the base-emitter junction was also observed during the accelerated lifetime testing. In order to improve the HBT reliability endangered by the hot electrons, deuterium sintered techniques have been proposed. The preliminary results from this study show that a deuterium-sintered HBT is, indeed, more resistant to hot-electron induced base-emitter junction degradation. SiGe/Si based amplifier circuits were also subjected to lifetime testing and we extrapolate MTTF is approximately 1.1_10(exp 6) hours at 125iC junction temperature from the circuit lifetime data.

Study of ultra-low emittance design for Spear3 using longitudinal gradient dipole

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, M. -H.; Huang, X.; Safranek, J.

2015-09-24

Since its 2003 construction, the SPEAR3 synchrotron light source at SLAC has continuously improved its performance by raising beam current, top-off injection, and smaller emittance. This makes SPEAR3 one of the most productive light sources in the world. Now to further enhance the performance of SPEAR3, we are looking into the possibility of converting SPEAR3 to an ultra-low emittance storage ring within its site constraint.

Plasma wakefield acceleration experiments at FACET II

NASA Astrophysics Data System (ADS)

Joshi, C.; Adli, E.; An, W.; Clayton, C. E.; Corde, S.; Gessner, S.; Hogan, M. J.; Litos, M.; Lu, W.; Marsh, K. A.; Mori, W. B.; Vafaei-Najafabadi, N.; O'shea, B.; Xu, Xinlu; White, G.; Yakimenko, V.

2018-03-01

During the past two decades of research, the ultra-relativistic beam-driven plasma wakefield accelerator (PWFA) concept has achieved many significant milestones. These include the demonstration of ultra-high gradient acceleration of electrons over meter-scale plasma accelerator structures, efficient acceleration of a narrow energy spread electron bunch at high-gradients, positron acceleration using wakes in uniform plasmas and in hollow plasma channels, and demonstrating that highly nonlinear wakes in the ‘blow-out regime’ have the electric field structure necessary for preserving the emittance of the accelerating bunch. A new 10 GeV electron beam facility, Facilities for Accelerator Science and Experimental Test (FACET) II, is currently under construction at SLAC National Accelerator Laboratory for the next generation of PWFA research and development. The FACET II beams will enable the simultaneous demonstration of substantial energy gain of a small emittance electron bunch while demonstrating an efficient transfer of energy from the drive to the trailing bunch. In this paper we first describe the capabilities of the FACET II facility. We then describe a series of PWFA experiments supported by numerical and particle-in-cell simulations designed to demonstrate plasma wake generation where the drive beam is nearly depleted of its energy, high efficiency acceleration of the trailing bunch while doubling its energy and ultimately, quantifying the emittance growth in a single stage of a PWFA that has optimally designed matching sections. We then briefly discuss other FACET II plasma-based experiments including in situ positron generation and acceleration, and several schemes that are promising for generating sub-micron emittance bunches that will ultimately be needed for both an early application of a PWFA and for a plasma-based future linear collider.

Ultralow emittance, multi-MeV proton beams from a laser virtual-cathode plasma accelerator.

PubMed

Cowan, T E; Fuchs, J; Ruhl, H; Kemp, A; Audebert, P; Roth, M; Stephens, R; Barton, I; Blazevic, A; Brambrink, E; Cobble, J; Fernández, J; Gauthier, J-C; Geissel, M; Hegelich, M; Kaae, J; Karsch, S; Le Sage, G P; Letzring, S; Manclossi, M; Meyroneinc, S; Newkirk, A; Pépin, H; Renard-LeGalloudec, N

2004-05-21

The laminarity of high-current multi-MeV proton beams produced by irradiating thin metallic foils with ultraintense lasers has been measured. For proton energies >10 MeV, the transverse and longitudinal emittance are, respectively, <0.004 mm mrad and <10(-4) eV s, i.e., at least 100-fold and may be as much as 10(4)-fold better than conventional accelerator beams. The fast acceleration being electrostatic from an initially cold surface, only collisions with the accelerating fast electrons appear to limit the beam laminarity. The ion beam source size is measured to be <15 microm (FWHM) for proton energies >10 MeV.

Characterizing and Optimizing Photocathode Laser Distributions for Ultra-low Emittance Electron Beam Operations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, F.; Bohler, D.; Ding, Y.

2015-12-07

Photocathode RF gun has been widely used for generation of high-brightness electron beams for many different applications. We found that the drive laser distributions in such RF guns play important roles in minimizing the electron beam emittance. Characterizing the laser distributions with measurable parameters and optimizing beam emittance versus the laser distribution parameters in both spatial and temporal directions are highly desired for high-brightness electron beam operation. In this paper, we report systematic measurements and simulations of emittance dependence on the measurable parameters represented for spatial and temporal laser distributions at the photocathode RF gun systems of Linac Coherent Lightmore » Source. The tolerable parameter ranges for photocathode drive laser distributions in both directions are presented for ultra-low emittance beam operations.« less

Transparent conductor-embedding nanocones for selective emitters: optical and electrical improvements of Si solar cells

PubMed Central

Kim, Joondong; Yun, Ju-Hyung; Kim, Hyunyub; Cho, Yunae; Park, Hyeong-Ho; Kumar, M. Melvin David; Yi, Junsin; Anderson, Wayne A.; Kim, Dong-Wook

2015-01-01

Periodical nanocone-arrays were employed in an emitter region for high efficient Si solar cells. Conventional wet-etching process was performed to form the nanocone-arrays for a large area, which spontaneously provides the graded doping features for a selective emitter. This enables to lower the electrical contact resistance and enhances the carrier collection due to the high electric field distribution through a nanocone. Optically, the convex-shaped nanocones efficiently reduce light-reflection and the incident light is effectively focused into Si via nanocone structure, resulting in an extremely improved the carrier collection performances. This nanocone-arrayed selective emitter simultaneously satisfies optical and electrical improvement. We report the record high efficiency of 16.3% for the periodically nanoscale patterned emitter Si solar cell. PMID:25787933

Transparent conductor-embedding nanocones for selective emitters: optical and electrical improvements of Si solar cells.

PubMed

Kim, Joondong; Yun, Ju-Hyung; Kim, Hyunyub; Cho, Yunae; Park, Hyeong-Ho; Kumar, M Melvin David; Yi, Junsin; Anderson, Wayne A; Kim, Dong-Wook

2015-03-19

Periodical nanocone-arrays were employed in an emitter region for high efficient Si solar cells. Conventional wet-etching process was performed to form the nanocone-arrays for a large area, which spontaneously provides the graded doping features for a selective emitter. This enables to lower the electrical contact resistance and enhances the carrier collection due to the high electric field distribution through a nanocone. Optically, the convex-shaped nanocones efficiently reduce light-reflection and the incident light is effectively focused into Si via nanocone structure, resulting in an extremely improved the carrier collection performances. This nanocone-arrayed selective emitter simultaneously satisfies optical and electrical improvement. We report the record high efficiency of 16.3% for the periodically nanoscale patterned emitter Si solar cell.

Sensitivity of Beam Parameters to a Station C Solenoid Scan on Axis II

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schulze, Martin E.

Magnet scans are a standard technique for determining beam parameters in accelerators. Beam parameters are inferred from spot size measurements using a model of the beam optics. The sensitivity of the measured beam spot size to the beam parameters is investigated for typical DARHT Axis II beam energies and currents. In a typical S4 solenoid scan, the downstream transport is tuned to achieve a round beam at Station C with an envelope radius of about 1.5 cm with a very small divergence with S4 off. The typical beam energy and current are 16.0 MeV and 1.625 kA. Figures 1-3 showmore » the sensitivity of the bean size at Station C to the emittance, initial radius and initial angle respectively. To better understand the relative sensitivity of the beam size to the emittance, initial radius and initial angle, linear regressions were performed for each parameter as a function of the S4 setting. The results are shown in Figure 4. The measured slope was scaled to have a maximum value of 1 in order to present the relative sensitivities in a single plot. Figure 4 clearly shows the beam size at the minimum of the S4 scan is most sensitive to emittance and relatively insensitive to initial radius and angle as expected. The beam emittance is also very sensitive to the beam size of the converging beam and becomes insensitive to the beam size of the diverging beam. Measurements of the beam size of the diverging beam provide the greatest sensitivity to the initial beam radius and to a lesser extent the initial beam angle. The converging beam size is initially very sensitive to the emittance and initial angle at low S4 currents. As the S4 current is increased the sensitivity to the emittance remains strong while the sensitivity to the initial angle diminishes.« less

Spectrally-engineered solar thermal photovoltaic devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lenert, Andrej; Bierman, David; Chan, Walker

A solar thermal photovoltaic device, and method of forming same, includes a solar absorber and a spectrally selective emitter formed on either side of a thermally conductive substrate. The solar absorber is configured to absorb incident solar radiation. The solar absorber and the spectrally selective emitter are configured with an optimized emitter-to-absorber area ratio. The solar thermal photovoltaic device also includes a photovoltaic cell in thermal communication with the spectrally selective emitter. The spectrally selective emitter is configured to permit high emittance for energies above a bandgap of the photovoltaic cell and configured to permit low emittance for energies belowmore » the bandgap.« less

RF Guns for Generation of Polarized Electron Beams

DOE Office of Scientific and Technical Information (OSTI.GOV)

Clendenin, J.E.; Brachmann, A.; Dowell, D.H.

2005-11-09

Several accelerators, including the SLC, JLAB, Mainz, Bates/MIT, and Bonn have successfully operated for medium and high energy physics experiments using polarized electron beams generated by dc-biased guns employing GaAs photocathodes. Since these guns have all used a bias on the order of 100 kV, the longitudinal emittance of the extracted bunch is rather poor. Downstream rf bunching systems increase the transverse emittance. An rf gun with a GaAs photocathode would eliminate the need for separate rf bunchers, resulting in a simpler injection system. In addition, the thermal emittance of GaAs-type cathodes is significantly lower than for other photocathode materials.more » The environmental requirements for operating activated GaAs photocathodes cannot be met by rf guns as currently designed and operated. These requirements, including limits on vacuum and electron back bombardment, are discussed in some detail. Modifications to actual and proposed rf gun designs that would allow these requirements to be met are presented.« less

Theoretical analysis of field emission from a metal diamond cold cathode emitter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lerner, P.; Cutler, P.H.; Miskovsky, N.M.

Recently, Geis {ital et al.} [J. Vac. Sci. Technol. B {bold 14}, 2060 (1996)] proposed a cold cathode emitter based on a Spindt-type design using a diamond film doped by substitutional nitrogen. The device is characterized by high field emission currents at very low power. Two properties, the rough surface of the metallic injector and the negative electron affinity of the (111) surface of the diamond are essential for its operation. We present a first consistent quantitative theory of the operation of a Geis{endash}Spindt diamond field emitter. Its essential features are predicated on nearly {ital zero-field conditions} in the diamondmore » beyond the depletion layer, {ital quasiballistic transport} in the conduction band, and applicability of a modified {ital Fowler{endash}Nordheim equation} to the transmission of electrons through the Schottky barrier at the metal-diamond interface. Calculated results are in good qualitative and quantitative agreement with the experimental results of Geis {ital et al.} {copyright} {ital 1997 American Vacuum Society.}« less

Vacuum Microelectronic Field Emission Array Devices for Microwave Amplification.

NASA Astrophysics Data System (ADS)

Mancusi, Joseph Edward

This dissertation presents the design, analysis, and measurement of vacuum microelectronic devices which use field emission to extract an electron current from arrays of silicon cones. The arrays of regularly-spaced silicon cones, the field emission cathodes or emitters, are fabricated with an integrated gate electrode which controls the electric field at the tip of the cone, and thus the electron current. An anode or collector electrode is placed above the array to collect the emission current. These arrays, which are fabricated in a standard silicon processing facility, are developed for use as high power microwave amplifiers. Field emission has been studied extensively since it was first characterized in 1928, however due to the large electric fields required practical field emission devices are difficult to make. With the development of the semiconductor industry came the development of fabrication equipment and techniques which allow for the manufacture of the precision micron-scale structures necessary for practical field emission devices. The active region of a field emission device is a vacuum, therefore the electron travel is ballistic. This analysis of field emission devices includes electric field and electron emission modeling, development of a device equivalent circuit, analysis of the parameters in the equivalent circuit, and device testing. Variations in device structure are taken into account using a statistical model based upon device measurements. Measurements of silicon field emitter arrays at DC and RF are presented and analyzed. In this dissertation, the equivalent circuit is developed from the analysis of the device structure. The circuit parameters are calculated from geometrical considerations and material properties, or are determined from device measurements. It is necessary to include the emitter resistance in the equivalent circuit model since relatively high resistivity silicon wafers are used. As is demonstrated, the circuit model accurately predicts the magnitude of the emission current at a number of typical bias current levels when the device is operating at frequencies within the range of 10 MHz to 1 GHz. At low frequencies and at high frequencies within this range, certain parameters are negligible, and simplifications may be made in the equivalent circuit model.

Recent progress of 638-nm high-power broad area laser diodes in Mitsubishi Electric

NASA Astrophysics Data System (ADS)

Kuramoto, Kyosuke; Abe, Shinji; Miyashita, Motoharu; Nishida, Takehiro; Yagi, Tetsuya

2018-02-01

Laser based displays have gathered much attention because only the displays can express full color gamut of Ultra-HDTV, ITU-R BT.2020. One of the displays uses the lasers under pulse such as a single spatial light modulator (SLM) projector, and the other does ones under CW such as a multiple SLM projector and a liquid crystal display. Both types require high-power lasers because brightness is the most important factor in the market. We developed two types of 638-nm multi-emitter high-power BA-LDs assembled on Φ9.0-TO, that is, triple emitter for pulse and dual emitter for CW. The triple emitter LD emitted exceeding 6.0 W peak power under 25°C, frequency of 120 Hz, and duty of 30%. At high temperature, 55°C, the peak power was approximately 2.9W. The dual emitter emitted exceeding 3.0W under 25°C, CW. It emitted up to 1.7 W at 55°C. WPE of the dual emitter reached 40.5% at Tc of 25°C, which is the world highest in 638-nm LD under CW to the best of our knowledge, although that of the triple emitter was 38.1%. Both LDs may be suitable for laser based display applications.

Highly Simplified Tandem Organic Light-Emitting Devices Incorporating a Green Phosphorescence Ultrathin Emitter within a Novel Interface Exciplex for High Efficiency.

PubMed

Xu, Ting; Zhou, Jun-Gui; Huang, Chen-Chao; Zhang, Lei; Fung, Man-Keung; Murtaza, Imran; Meng, Hong; Liao, Liang-Sheng

2017-03-29

Herein we report a novel design philosophy of tandem OLEDs incorporating a doping-free green phosphorescent bis[2-(2-pyridinyl-N)phenyl-C](acetylacetonato)iridium(III) (Ir(ppy) 2 (acac)) as an ultrathin emissive layer (UEML) into a novel interface-exciplex-forming structure of 1,1-bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC) and 1,3,5-tri(p-pyrid-3-yl-phenyl)benzene (TmPyPB). Particularly, relatively low working voltage and remarkable efficiency are achieved and the designed tandem OLEDs exhibit a peak current efficiency of 135.74 cd/A (EQE = 36.85%) which is two times higher than 66.2 cd/A (EQE = 17.97%) of the device with a single emitter unit. This might be one of the highest efficiencies of OLEDs applying ultrathin emitters without light extraction. Moreover, with the proposed structure, the color gamut of the displays can be effectively increased from 76% to 82% NTSC if the same red and blue emissions as those in the NTSC are applied. A novel form of harmonious fusion among interface exciplex, UEML, and tandem structure is successfully realized, which sheds light on further development of ideal OLED structure with high efficiency, simplified fabrication, low power consumption, low cost, and improved color gamut, simultaneously.

Highly efficient near-infrared light-emitting diodes by using type-II CdTe/CdSe core/shell quantum dots as a phosphor

NASA Astrophysics Data System (ADS)

Shen, Huaibin; Zheng, Ying; Wang, Hongzhe; Xu, Weiwei; Qian, Lei; Yang, Yixing; Titov, Alexandre; Hyvonen, Jake; Li, Lin Song

2013-11-01

In this paper, we present an innovative method for the synthesis of CdTe/CdSe type-II core/shell structure quantum dots (QDs) using ‘greener’ chemicals. The PL of CdTe/CdSe type-II core/shell structure QDs ranges from 600 to 820 nm, and the as-synthesized core/shell structures show narrow size distributions and stable and high quantum yields (50-75%). Highly efficient near-infrared light-emitting diodes (LEDs) have been demonstrated by employing the CdTe/CdSe type-II core/shell QDs as emitters. The devices fabricated based on these type-II core/shell QDs show color-saturated near-infrared emission from the QD layers, a low turn-on voltage of 1.55 V, an external quantum efficiency (EQE) of 1.59%, and a current density and maximum radiant emittance of 2.1 × 103 mA cm-2 and 17.7 mW cm-2 at 8 V it is the first report to use type-II core/shell QDs as near-infrared emitters and these results may offer a practicable platform for the realization of near-infrared QD-based light-emitting diodes, night-vision-readable displays, and friend/foe identification system.

Status and Progress of High-efficiency Silicon Solar Cells

NASA Astrophysics Data System (ADS)

Xiao, Shaoqing; Xu, Shuyan

High-efficiency Si solar cells have attracted more and more attention from researchers, scientists, engineers of photovoltaic (PV) industry for the past few decades. Many high-quality researchers and engineers in both academia and industry seek solutions to improve the cell efficiency and reduce the cost. This desire has stimulated a growing number of major research and research infrastructure programmes, and a rapidly increasing number of publications in this filed. This chapter reviews materials, devices and physics of high-efficiency Si solar cells developed over the last 20 years. In this chapter there is a fair number of topics, not only from the material viewpoint, introducing various materials that are required for high-efficiency Si solar cells, such as base materials (FZ-Si, CZ-Si, MCZ-Si and multi-Si), emitter materials (diffused emitter and deposited emitter), passivation materials (Al-back surface field, high-low junction, SiO2, SiO x , SiN x , Al2O3 and a-Si:H), and other functional materials (antireflective layer, TCO and metal electrode), but also from the device and physics point of view, elaborating on physics, cell concept, development and status of all kinds of high-efficiency Si solar cells, such as passivated emitter and rear contact (PERC), passivated emitter and rear locally diffused (PERL), passivated emitter and rear totally diffused (PERT), Pluto, interdigitated back-contacted (IBC), emitter-wrap-through (EWT), metallization-wrap-through (MWT), Heterojunction with intrinsic thin-layer (HIT) and so on. Some representative examples of high-efficiency Si solar cell materials and devices with excellent performance and competitive advantages are presented.

High-efficiency solar-thermophotovoltaic system equipped with a monolithic planar selective absorber/emitter

NASA Astrophysics Data System (ADS)

Shimizu, Makoto; Kohiyama, Asaka; Yugami, Hiroo

2015-01-01

We demonstrate a high-efficiency solar-thermophotovoltaic system (STPV) using a monolithic, planar, and spectrally selective absorber/emitter. A complete STPV system using gallium antimonide (GaSb) cells was designed and fabricated to conduct power generation tests. To produce a high-efficiency STPV, it is important to match the thermal radiation spectrum with the sensitive region of the GaSb cells. Therefore, to reach high temperatures with low incident power, a planar absorber/emitter is incorporated for controlling the thermal radiation spectrum. This multilayer coating consists of thin-film tungsten sandwiched by yttria-stabilized zirconia. The system efficiency is estimated to be 16% when accounting for the optical properties of the fabricated absorber/emitter. Power generation tests using a high-concentration solar simulator show that the absorber/emitter temperature peaks at 1640 K with an incident power density of 45 W/cm2, which can be easily obtained by low-cost optics such as Fresnel lenses. The conversion efficiency became 23%, exceeding the Shockley-Queisser limit for GaSb, with a bandgap of 0.67 eV. Furthermore, a total system efficiency of 8% was obtained with the view factor between the emitter and the cell assumed to be 1.

Diminiode thermionic conversion with 111-iridium electrodes

NASA Technical Reports Server (NTRS)

Koeger, E. W.; Bair, V. L.; Morris, J. F.

1976-01-01

Preliminary data indicating thermionic-conversion potentialities for a 111-iridium emitter and collector spaced 0.2 mm apart are presented. These results comprise output densities of current and of power as functions of voltage for three sets of emitter, collector, and reservoir temperatures: 1553, 944, 561 K; 1605, 898, 533 K; and 1656, 1028, 586 K. For the 1605 K evaluation, estimates produced work-function values of 2.22 eV for the emitter and 1.63 eV for the collector with a 2.0-eV barrier index (collector work function plus interelectrode voltage drop) corresponding to the maximum output of 5.5 W/sq cm at 0.24 volt. The current, voltage curve for the 1656 K 111-iridium diminiode yields a 6.2 W/sq cm maximum at 0.25 volt and is comparable with the 1700 K envelope for a diode with an etched-rhenium emitter and a 0.025-mm electrode gap made by TECO and evaluated by NASA.

Deterministic Coupling of Quantum Emitters in 2D Materials to Plasmonic Nanocavity Arrays.

PubMed

Tran, Toan Trong; Wang, Danqing; Xu, Zai-Quan; Yang, Ankun; Toth, Milos; Odom, Teri W; Aharonovich, Igor

2017-04-12

Quantum emitters in two-dimensional materials are promising candidates for studies of light-matter interaction and next generation, integrated on-chip quantum nanophotonics. However, the realization of integrated nanophotonic systems requires the coupling of emitters to optical cavities and resonators. In this work, we demonstrate hybrid systems in which quantum emitters in 2D hexagonal boron nitride (hBN) are deterministically coupled to high-quality plasmonic nanocavity arrays. The plasmonic nanoparticle arrays offer a high-quality, low-loss cavity in the same spectral range as the quantum emitters in hBN. The coupled emitters exhibit enhanced emission rates and reduced fluorescence lifetimes, consistent with Purcell enhancement in the weak coupling regime. Our results provide the foundation for a versatile approach for achieving scalable, integrated hybrid systems based on low-loss plasmonic nanoparticle arrays and 2D materials.

Dose rate constants for the quantity Hp(3) for frequently used radionuclides in nuclear medicine.

PubMed

Szermerski, Bastian; Bruchmann, Iris; Behrens, Rolf; Geworski, Lilli

2016-12-01

According to recent studies, the human eye lens is more sensitive to ionising radiation than previously assumed. Therefore, the dose limit for personnel occupationally exposed to ionising radiation will be lowered from currently 150 mSv to 20 mSv per year. Currently, no data base for a reliable estimation of the dose to the lens of the eye is available for nuclear medicine. Furthermore, the dose is usually not monitored. The aim of this work was to determine dose rate constants for the quantity H p (3), which is supposed to estimate the dose to the lens of the eye. For this, H p (3)-dosemeters were fixed to an Alderson Phantom at different positions. The dosemeters were exposed to radiation from nuclides typically used in nuclear medicine in their geometries analog to their application in nuclear medicine, e.g. syringe or vial. The results show that the handling of high-energy beta (i.e. electron or positron) emitters may lead to a relevant dose to the lens of the eye. For low-energy beta emitters and gamma emitters, an exceeding of the lowered dose limit seems to be unlikely. Copyright © 2015. Published by Elsevier GmbH.

Extension of the general thermal field equation for nanosized emitters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kyritsakis, A., E-mail: akyritsos1@gmail.com; Xanthakis, J. P.

2016-01-28

During the previous decade, Jensen et al. developed a general analytical model that successfully describes electron emission from metals both in the field and thermionic regimes, as well as in the transition region. In that development, the standard image corrected triangular potential barrier was used. This barrier model is valid only for planar surfaces and therefore cannot be used in general for modern nanometric emitters. In a recent publication, the authors showed that the standard Fowler-Nordheim theory can be generalized for highly curved emitters if a quadratic term is included to the potential model. In this paper, we extend thismore » generalization for high temperatures and include both the thermal and intermediate regimes. This is achieved by applying the general method developed by Jensen to the quadratic barrier model of our previous publication. We obtain results that are in good agreement with fully numerical calculations for radii R > 4 nm, while our calculated current density differs by a factor up to 27 from the one predicted by the Jensen's standard General-Thermal-Field (GTF) equation. Our extended GTF equation has application to modern sharp electron sources, beam simulation models, and vacuum breakdown theory.« less

Radiation damage of gallium arsenide production cells

NASA Technical Reports Server (NTRS)

Mardesich, N.; Garlick, G. F. J.

1987-01-01

High-efficiency gallium arsenide cells, made by the liquid epitaxy method (LPE), have been irradiated with 1-MeV electrons up to fluences of 10 to the 16th e/sq cm. Measurements have been made of cell spectral response and dark and light-excited current-voltage characteristics and analyzed using computer-based models to determine underlying parameters such as damage coefficients. It is possible to use spectral response to sort out damage effects in the different cell component layers. Damage coefficients are similar to other reported in the literature for the emitter and buffer (base). However, there is also a damage effect in the window layer and possibly at the window emitter interface similar to that found for proton-irradiated liquid-phase epitaxy-grown cells. Depletion layer recombination is found to be less than theoretically expected at high fluence.

New progress of high current gasdynamic ion source (invited).

PubMed

Skalyga, V; Izotov, I; Golubev, S; Sidorov, A; Razin, S; Vodopyanov, A; Tarvainen, O; Koivisto, H; Kalvas, T

2016-02-01

The experimental and theoretical research carried out at the Institute of Applied Physics resulted in development of a new type of electron cyclotron resonance ion sources (ECRISs)-the gasdynamic ECRIS. The gasdynamic ECRIS features a confinement mechanism in a magnetic trap that is different from Geller's ECRIS confinement, i.e., the quasi-gasdynamic one similar to that in fusion mirror traps. Experimental studies of gasdynamic ECRIS were performed at Simple Mirror Ion Source (SMIS) 37 facility. The plasma was created by 37.5 and 75 GHz gyrotron radiation with power up to 100 kW. High frequency microwaves allowed to create and sustain plasma with significant density (up to 8 × 10(13) cm(-3)) and to maintain the main advantages of conventional ECRIS such as high ionization degree and low ion energy. Reaching such high plasma density relies on the fact that the critical density grows with the microwave frequency squared. High microwave power provided the average electron energy on a level of 50-300 eV enough for efficient ionization even at neutral gas pressure range of 10(-4)-10(-3) mbar. Gasdynamic ECRIS has demonstrated a good performance producing high current (100-300 mA) multi-charged ion beams with moderate average charge (Z = 4-5 for argon). Gasdynamic ECRIS has appeared to be especially effective in low emittance hydrogen and deuterium beams formation. Proton beams with current up to 500 emA and RMS emittance below 0.07 π ⋅ mm ⋅ mrad have been demonstrated in recent experiments.

On the AlGaInP-bulk and AlGaInP/GaAs-superlattice confinement effects for heterostructure-emitter bipolar transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tsai, Jung-Hui, E-mail: jhtsai@nknucc.nknu.edu.tw

2015-02-09

The confinement effect and electrical characteristics of heterostructure-emitter bipolar transistors with an AlGaInP bulk-confinement layer and an AlGaInP/GaAs superlattice-confinement layer are first demonstrated and compared by experimentally results. In the two devices, the relatively large valence band discontinuity at AlGaInP/GaAs heterojunction provides excellent confinement effect for holes to enhance current gain. As to the AlGaInP/GaAs superlattice-confinement device, part of thermionic-emission electrons will be trapped in the GaAs quantum wells of the superlattice. This will result in lower collector current and current gain as compared with the bulk-confinement device. Nevertheless, the superlattice-confinement device exhibits a larger current-gain cutoff frequency, which canmore » be attributed that the tunneling behavior is included in the carrier transportation and transporting time across the emitter region could be substantially reduced.« less

ELECTRONIC INTEGRATING CIRCUIT

DOEpatents

Englemann, R.H.

1963-08-20

An electronic integrating circuit using a transistor with a capacitor connected between the emitter and collector through which the capacitor discharges at a rate proportional to the input current at the base is described. Means are provided for biasing the base with an operating bias and for applying a voltage pulse to the capacitor for charging to an initial voltage. A current dividing diode is connected between the base and emitter of the transistor, and signal input terminal means are coupled to the juncture of the capacitor and emitter and to the base of the transistor. At the end of the integration period, the residual voltage on said capacitor is less by an amount proportional to the integral of the input signal. Either continuous or intermittent periods of integration are provided. (AEC)

Tunneling modulation of a quantum-well transistor laser

NASA Astrophysics Data System (ADS)

Feng, M.; Qiu, J.; Wang, C. Y.; Holonyak, N.

2016-11-01

Different than the Bardeen and Brattain transistor (1947) with the current gain depending on the ratio of the base carrier spontaneous recombination lifetime to the emitter-collector transit time, the Feng and Holonyak transistor laser current gain depends upon the base electron-hole (e-h) stimulated recombination, the base dielectric relaxation transport, and the collector stimulated tunneling. For the n-p-n transistor laser tunneling operation, the electron-hole pairs are generated at the collector junction under the influence of intra-cavity photon-assisted tunneling, with electrons drifting to the collector and holes drifting to the base. The excess charge in the base lowers the emitter junction energy barrier, allowing emitter electron injection into the base and satisfying charge neutrality via base dielectric relaxation transport (˜femtoseconds). The excess electrons near the collector junction undergo stimulated recombination at the base quantum-well or transport to the collector, thus supporting tunneling current amplification and optical modulation of the transistor laser.

Open-circuit voltage improvements in low-resistivity solar cells

NASA Technical Reports Server (NTRS)

Godlewski, M. P.; Klucher, T. M.; Mazaris, G. A.; Weizer, V. G.

1979-01-01

Mechanisms limiting the open-circuit voltage in 0.1 ohm-cm solar cells were investigated. It was found that a rather complicated multistep diffusion process could produce cells with significantly improved voltages. The voltage capabilities of various laboratory cells were compared independent of their absorption and collection efficiencies. This was accomplished by comparing the cells on the basis of their saturation currents or, equivalently, comparing their voltage outputs at a constant current-density level. The results show that for both the Lewis diffused emitter cell and the Spire ion-implanted emitter cell the base component of the saturation current is voltage controlling. The evidence for the University of Florida cells, although not very conclusive, suggests emitter control of the voltage in this device. The data suggest further that the critical voltage-limiting parameter for the Lewis cell is the electron mobility in the cell base.

Optimize out-of-core thermionic energy conversion for nuclear electric propulsion

NASA Technical Reports Server (NTRS)

Morris, J. F.

1977-01-01

Current designs for out of core thermionic energy conversion (TEC) to power nuclear electric propulsion (NEP) were evaluated. Approaches to improve out of core TEC are emphasized and probabilities for success are indicated. TEC gains are available with higher emitter temperatures and greater power densities. Good potentialities for accommodating external high temperature, high power density TEC with heat pipe cooled reactors exist.

Facility for assessing spectral normal emittance of solid materials at high temperature.

PubMed

Mercatelli, Luca; Meucci, Marco; Sani, Elisa

2015-10-10

Spectral emittance is a key topic in the study of new compositions, depositions, and mechanical machining of materials for solar absorption and for renewable energies in general. The present work reports on the realization and testing of a new experimental facility for the measurement of directional spectral emittance in the range of 2.5-20 μm. Our setup provides emittance spectral information in a completely controlled environment at medium-high temperatures up to 1200 K. We describe the layout and first tests on the device, comparing the results obtained for hafnium carbide and tantalum diboride ultrarefractory ceramic samples to previous quasi-monochromatic measurements carried out in the PROMES-CNRS (PROcedes, Materiaux et Energie Solaire- Centre National de la Recherche Scientifique, France) solar furnace, obtaining a good agreement. Finally, to assess the reliability of the widely used approach of estimating the spectral emittance from room-temperature reflectance spectrum, we compared the calculation in the 2.5-17 μm spectral range to the experimental high-temperature spectral emittance, obtaining that the spectral trend of calculated and measured curves is similar but the calculated emittance underestimates the measured value.

Generation of low-emittance electron beams in electrostatic accelerators for FEL applications

NASA Astrophysics Data System (ADS)

Chen, Teng; Elias, Luis R.

1995-02-01

This paper reports results of transverse emittance studies and beam propagation in electrostatic accelerators for free electron laser applications. In particular, we discuss emittance growth analysis of a low current electron beam system consisting of a miniature thermoionic electron gun and a National Electrostatics Accelerator (NEC) tube. The emittance growth phenomenon is discussed in terms of thermal effects in the electron gun cathode and aberrations produced by field gradient changes occurring inside the electron gun and throughout the accelerator tube. A method of reducing aberrations using a magnetic solenoidal field is described. Analysis of electron beam emittance was done with the EGUN code. Beam propagation along the accelerator tube was studied using a cylindrically symmetric beam envelope equation that included beam self-fields and the external accelerator fields which were derived from POISSON simulations.

Performance of a thermionic converter module utilizing emitter and collector heat pipes

NASA Technical Reports Server (NTRS)

Kroeger, E. W.; Morris, J. F.; Miskolczy, G.; Lieb, D. P.; Goodale, D. B.

1978-01-01

A thermionic converter module simulating a configuration for an out-of-core thermionic nuclear reactor was designed, fabricated, and tested. The module consists of three cylindrical thermionic converters. The tungsten emitter of the converter is heated by a tungsten, lithium heat pipe. The emitter heat pipes are immersed in a furnace, insulated by MULTI-FOIL thermal insulation, and heated by tungsten radiation filaments. The performance of each thermionic converter was characterized before assembly into the module. Dynamic voltage, current curves were taken using a 60 Hz sweep and computerized data acquisition over a range of emitter, collector, and cesium-reservoir temperatures. An output power of 215 W was observed at an emitter temperature of 1750 K and a collector temperature of 855 K for a two diode module. With a three diode module, an output power of 270 W was observed at an average emitter temperature of 1800 K and a Collector temperature of 875 K.

A universal formula for the field enhancement factor

NASA Astrophysics Data System (ADS)

Biswas, Debabrata

2018-04-01

The field enhancement factor (FEF) is an important quantity in field emission calculations since the tunneling electron current depends very sensitively on its magnitude. The exact dependence of FEF on the emitter height h, the radius of curvature at the apex Ra, as well as the shape of the emitter base are still largely unknown. In this work, a universal formula for the field enhancement factor is derived for a single emitter. It depends on the ratio h/Ra and has the form γ a = ( 2 h / R a ) / [ α 1 ln ( 4 h / R a ) - α 2 ] , where α1 and α2 depend on the charge distribution on the emitter. Numerical results show that a simpler form γ a = ( 2 h / R a ) / [ ln ( 4 h / R a ) - α ] is equally valid with α depending on the emitter-base. Thus, for the hyperboloid, conical, and ellipsoid emitters, the value of α is 0, 0.88, and 2, while for the cylindrical base, α ≃ 2.6.

Static and dynamic behavior of a Si/Si0.8Ge0.2/Si heterojunction bipolar transistor using Monte Carlo simulation

NASA Astrophysics Data System (ADS)

Galdin, Sylvie; Dollfus, Philippe; Hesto, Patrice

1994-03-01

A theoretical study of a Si/Si1-xGex/Si heterojunction bipolar transistor using Monte Carlo simulations is reported. The geometry and composition of the emitter-base junction are optimized using one-dimensional simulations with a view to improving electron transport in the base. It is proposed to introduce a thin Si-P spacer layer, between the Si-N emitter and the SiGe-P base, which allows launching hot electrons into the base despite the lack of natural conduction-band discontinuity between Si and strain SiGe. The high-frequency behavior of the complete transistor is then studied using 2D modeling. A method of microwave analysis using small signal Monte Carlo simulations that consists of expanding the terminal currents in Fourier series is presented. A cutoff frequency fT of 68 GHz has been extracted. Finally, the occurrence of a parasitic electron barrier at the collector-base junction is responsible for the fT fall-off at high collector current density. This parasitic barrier is lowered through the influence of the collector potential.

Lateral carrier diffusion and current gain in terahertz InGaAs/InP double-heterojunction bipolar transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chiang, Han-Wei; Rode, Johann C.; Choudhary, Prateek

2014-01-21

The DC current gain in In{sub 0.53}Ga{sub 0.47}As/InP double-heterojunction bipolar transistors is computed based on a drift-diffusion model, and is compared with experimental data. Even in the absence of other scaling effects, lateral diffusion of electrons to the base Ohmic contacts causes a rapid reduction in DC current gain as the emitter junction width and emitter-base contact spacing are reduced. The simulation and experimental data are compared in order to examine the effect of carrier lateral diffusion on current gain. The impact on current gain due to device scaling and approaches to increase current gain are discussed.

Efficiency Enhancement of Nanotextured Black Silicon Solar Cells Using Al2O3/TiO2 Dual-Layer Passivation Stack Prepared by Atomic Layer Deposition.

PubMed

Wang, Wei-Cheng; Tsai, Meng-Chen; Yang, Jason; Hsu, Chuck; Chen, Miin-Jang

2015-05-20

In this study, efficient nanotextured black silicon (NBSi) solar cells composed of silicon nanowire arrays and an Al2O3/TiO2 dual-layer passivation stack on the n(+) emitter were fabricated. The highly conformal Al2O3 and TiO2 surface passivation layers were deposited on the high-aspect-ratio surface of the NBSi wafers using atomic layer deposition. Instead of the single Al2O3 passivation layer with a negative oxide charge density, the Al2O3/TiO2 dual-layer passivation stack treated with forming gas annealing provides a high positive oxide charge density and a low interfacial state density, which are essential for the effective field-effect and chemical passivation of the n(+) emitter. In addition, the Al2O3/TiO2 dual-layer passivation stack suppresses the total reflectance over a broad range of wavelengths (400-1000 nm). Therefore, with the Al2O3/TiO2 dual-layer passivation stack, the short-circuit current density and efficiency of the NBSi solar cell were increased by 11% and 20%, respectively. In conclusion, a high efficiency of 18.5% was achieved with the NBSi solar cells by using the n(+)-emitter/p-base structure passivated with the Al2O3/TiO2 stack.

Strong-Field Emission From High Aspect Ratio Si Emitter Arrays

NASA Astrophysics Data System (ADS)

Keathley, Phillip; Swanwick, Michael; Sell, Alexander; Putnam, William; Guerrera, Stephen; Velásquez-García, Luis; Kärtner, Franz

2013-03-01

We discuss photoelectron emission from an arrays of high aspect ratio, sharp Si emitters both experimentally and theoretically. The structures are prepared from highly doped single-crystal silicon having a pencil-like shape with end radii of curvature of around 10 nm. The tips were illuminated at a grazing incidence of roughly 84deg.with a laser pulse having a center wavelength of 800 nm, and a pulse duration of 35 fs from a regenerative amplifier system. Native oxide coated Si tips were characterized using a time of flight (TOF) electron energy spectrometer. An annealing process was observed, resulting in a red shift of the energy spectra along with an increased electron yield. Total current yield from samples having the oxide stripped were also studied. Apeak total emission of 0.68 pC/bunch, corresponding to around 1.5x103 electrons/tip/pulse was observed at a DC bias of 70 V. Both spectral and current characterization results are consistent with a stong-field photoemission process at the surface of the tip apex. This work was funded by Defense Advanced Research Projects Agency (DARPA)/Microsystems Technology Office and the Space and Naval Warfare Systems Center (SPAWAR) under contract N66001-11-1-4192.

Characterization of the heavily doped emitter and junction regions of silicon solar cells using an electron beam

NASA Technical Reports Server (NTRS)

Luke, K. L.; Cheng, L.-J.

1986-01-01

Heavily doped emitter and junction regions of silicon solar cells are investigated by means of the electron-beam-induced-current (EBIC) technique. Although the experimental EBIC data are collected under three-dimensional conditions, it is analytically demonstrated with two numerical examples that the solutions obtained with one-dimensional numerical modeling are adequate. EBIC data for bare and oxide-covered emitter surfaces are compared with theory. The improvement in collection efficiency when an emitter surface is covered with a 100-A SiO2 film varies with beam energy; for a cell with a junction depth of 0.35 microns, the improvement is about 54 percent at 2 keV.

Beam brilliance investigation of high current ion beams at GSI heavy ion accelerator facility.

PubMed

Adonin, A A; Hollinger, R

2014-02-01

In this work the emittance measurements of high current Ta-beam provided by VARIS (Vacuum Arc Ion Source) ion source are presented. Beam brilliance as a function of beam aperture at various extraction conditions is investigated. Influence of electrostatic ion beam compression in post acceleration gap on the beam quality is discussed. Use of different extraction systems (single aperture, 7 holes, and 13 holes) in order to achieve more peaked beam core is considered. The possible ways to increase the beam brilliance are discussed.

Performance and durability of high emittance heat receiver surfaces for solar dynamic power systems

NASA Technical Reports Server (NTRS)

Degroh, Kim K.; Roig, David M.; Burke, Christopher A.; Shah, Dilipkumar R.

1994-01-01

Haynes 188, a cobalt-based superalloy, will be used to make thermal energy storage (TES) containment canisters for a 2 kW solar dynamic ground test demonstrator (SD GTD). Haynes 188 containment canisters with a high thermal emittance (epsilon) are desired for radiating heat away from local hot spots, improving the heating distribution, which will in turn improve canister service life. In addition to needing a high emittance, the surface needs to be durable in an elevated temperature, high vacuum environment for an extended time period. Thirty-five Haynes 188 samples were exposed to 14 different types of surface modification techniques for emittance and vacuum heat treatment (VHT) durability enhancement evaluation. Optical properties were obtained for the modified surfaces. Emittance enhanced samples were exposed to VHT for up to 2692 hours at 827 C and less than or equal to 10(exp -6) torr with integral thermal cycling. Optical properties were taken intermittently during exposure, and after final VHT exposure. The various surface modification treatments increased the emittance of pristine Haynes 188 from 0.11 up to 0.86. Seven different surface modification techniques were found to provide surfaces which met the SD GTD receiver VHT durability requirement. Of the 7 surface treatments, 2 were found to display excellent VHT durability: an alumina based (AB) coating and a zirconia based coating. The alumina based coating was chosen for the epsilon enhancement surface modification technique for the SD GTD receiver. Details of the performance and vacuum heat treatment durability of this coating and other Haynes 188 emittance surface modification techniques are discussed. Technology from this program will lead to successful demonstration of solar dynamic power for space applications, and has potential for application in other systems requiring high emittance surfaces.

High efficiency direct thermal to electric energy conversion from radioisotope decay using selective emitters and spectrally tuned solar cells

NASA Technical Reports Server (NTRS)

Chubb, Donald L.; Flood, Dennis J.; Lowe, Roland A.

1993-01-01

Thermophotovoltaic (TPV) systems are attractive possibilities for direct thermal-to-electric energy conversion, but have typically required the use of black body radiators operating at high temperatures. Recent advances in both the understanding and performance of solid rare-earth oxide selective emitters make possible the use of TPV at temperatures as low as 1200K. Both selective emitter and filter system TPV systems are feasible. However, requirements on the filter system are severe in order to attain high efficiency. A thin-film of a rare-earth oxide is one method for producing an efficient, rugged selective emitter. An efficiency of 0.14 and power density of 9.2 W/KG at 1200K is calculated for a hypothetical thin-film neodymia (Nd2O3) selective emitter TPV system that uses radioisotope decay as the thermal energy source.

In-situ grown MgO-ZnO ceramic coating with high thermal emittance on Mg alloy by plasma electrolytic oxidation

NASA Astrophysics Data System (ADS)

Li, Hang; Lu, Songtao; Qin, Wei; Wu, Xiaohong

2017-07-01

Intense solar radiation and internal heat generation determine the equilibrium temperature of an in-orbit spacecraft. Thermal control coatings with low solar absorptance and high thermal emittance effectively maintain the thermal equilibrium within safe operating limits for exposed, miniaturized and highly integrated components. A novel ceramic coating with high thermal emittance and good adhesion was directly prepared on the Mg substrate using an economical process of controlled plasma electrolytic oxidation (PEO) in the electrolyte containing ZnSO4. XRD and XPS results showed that this coating was mainly composed of the MgO phase as well as an unusual ZnO crystalline phase. The adhesive strength between the coating and substrate determined by a pull-off test revealed an excellent adhesion. Thermal and optical properties test revealed that the coating exhibited a high infrared emittance of 0.88 (2-16 μm) and low solar absorptance of 0.35 (200-2500 nm). The result indicated that the formation of ZnO during the PEO process played an important role in the improvement of the coating emittance. The process developed provides a simple surface method for improving the thermal emittance of Mg alloy, which presents a promising application prospect in the thermal management of the spacecraft.

A new evaluation method of electron optical performance of high beam current probe forming systems.

PubMed

Fujita, Shin; Shimoyama, Hiroshi

2005-10-01

A new numerical simulation method is presented for the electron optical property analysis of probe forming systems with point cathode guns such as cold field emitters and the Schottky emitters. It has long been recognized that the gun aberrations are important parameters to be considered since the intrinsically high brightness of the point cathode gun is reduced due to its spherical aberration. The simulation method can evaluate the 'threshold beam current I(th)' above which the apparent brightness starts to decrease from the intrinsic value. It is found that the threshold depends on the 'electron gun focal length' as well as on the spherical aberration of the gun. Formulas are presented to estimate the brightness reduction as a function of the beam current. The gun brightness reduction must be included when the probe property (the relation between the beam current l(b) and the probe size on the sample, d) of the entire electron optical column is evaluated. Formulas that explicitly consider the gun aberrations into account are presented. It is shown that the probe property curve consists of three segments in the order of increasing beam current: (i) the constant probe size region, (ii) the brightness limited region where the probe size increases as d approximately I(b)(3/8), and (iii) the angular current intensity limited region in which the beam size increases rapidly as d approximately I(b)(3/2). Some strategies are suggested to increase the threshold beam current and to extend the effective beam current range of the point cathode gun into micro ampere regime.

High-absorptance high-emittance anodic coating

NASA Technical Reports Server (NTRS)

Le, Huong Giang (Inventor); Chesterfield, John L. (Inventor)

1998-01-01

A colored anodic coating for use on surfaces of substrates, e.g. aluminum substrates in which it is desirable to maintain a high solar absorptance (a) and a high infrared emittance (e), particularly in low earth orbit space environments. This anodic coating is preferably a dark colored coating, and even more preferably a black coating. This coating allows a touch temperature within an acceptable design range to preclude burning of an astronaut in case of contact, but also allows a solar radiation absorption in an amount such that an a/e ratio of unity is achieved. The coating of the invention comprises a first layer in the form of an acid anodized colored anodic layer for achieving a high solar absorptance and a second or high emittance layer in the form of a clear acid anodized layer for achieving a high emittance. The entire coating is quite thin, e.g. 1-2 mils and is quite stable in a hostile space environment of the type encountered in a low earth orbit. The coating is obtained by first creating the high emittance clear anodized coating on the metal surface followed by anodizing using a colored anodizing process.

High-absorptance high-emittance anodic coating

NASA Technical Reports Server (NTRS)

Le, Huong Giang (Inventor); Chesterfield, John L. (Inventor)

1999-01-01

A colored anodic coating for use on surfaces of substrates, e.g. aluminum substrates in which it is desirable to maintain a high solar absorptance (.alpha.) and a high infrared emittance (.epsilon.), particularly in low earth orbit space environments. This anodic coating is preferably a dark colored coating, and even more preferably a black coating. This coating allows a touch temperature within an acceptable design range to preclude burning of an astronaut in case of contact, but also allows a solar radiation absorption in an amount such that an .alpha./.epsilon. ratio of unity is achieved. The coating of the invention comprises a first layer in the form of an acid anodized colored anodic layer for achieving a high solar absorptance and a second or high emittance layer in the form of a clear acid anodized layer for achieving a high emittance. The entire coating is quite thin, e.g. 1-2 mils and is quite stable in a hostile space environment of the type encountered in a low earth orbit. The coating is obtained by first creating the high emittance clear anodized coating on the metal surface followed by anodizing using a colored anodizing process.

Derivation and correction of the Tsu-Esaki tunneling current formula

NASA Astrophysics Data System (ADS)

Bandara, K. M. S. V.; Coon, D. D.

1989-07-01

The theoretical basis of the Tsu-Esaki tunneling current formula [Appl. Phys. Lett. 22, 562 (1973)] is examined in detail and corrections are found. The starting point is an independent particle picture with fully antisymmetrized N-electron wave functions. Unitarity is used to resolve an orthonormality issue raised in earlier work. A new set of mutually consistent equations is derived for bias voltage, tunneling current, and electron densities in the emitter and collector. Corrections include a previously noted kinematic factor and a modification of emitter and collector Fermi levels. The magnitude of the corrections is illustrated numerically for the case of a resonant tunneling current-voltage characteristic.

Radiative heat transfer enhancement using geometric and spectral control for achieving high-efficiency solar-thermophotovoltaic systems

NASA Astrophysics Data System (ADS)

Kohiyama, Asaka; Shimizu, Makoto; Yugami, Hiroo

2018-04-01

We numerically investigate radiative heat transfer enhancement using spectral and geometric control of the absorber/emitter. A high extraction of the radiative heat transfer from the emitter as well as minimization of the optical losses from the absorber leads to high extraction and solar thermophotovoltaic (STPV) system efficiency. The important points for high-efficiency STPV design are discussed for the low and high area ratio of the absorber/emitter. The obtained general guideline will support the design of various types of STPV systems.

Investigation of fundamental limits to beam brightness available from photoinjectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bazarov, Ivan

2015-07-09

The goal of this project was investigation of fundamental limits to beam brightness available from photoinjectors. This basic research in accelerator physics spanned over 5 years aiming to extend the fundamental understanding of high average current, low emittance sources of relativistic electrons based on photoemission guns, a necessary prerequisite for a new generation of coherent X-ray synchrotron radiation facilities based on continuous duty superconducting linacs. The program focused on two areas critical to making advances in the electron source performance: 1) the physics of photocathodes for the production of low emittance electrons and 2) control of space charge forces inmore » the immediate vicinity to the cathode via 3D laser pulse shaping.« less

Reliability and efficacy of organic passivation for polycrystalline silicon solar cells at room temperature

NASA Astrophysics Data System (ADS)

Shinde, Onkar S.; Funde, Adinath M.; Jadkar, Sandesh R.; Dusane, Rajiv O.; Dhere, Neelkanth G.; Ghaisas, Subhash V.

2016-09-01

Oleylamine is used as a passivating layer instead of commercial high temperature SiNx. Oleylamine coating applied on the n-type emitter side with p-type base polycrystalline silicon solar cells at room temperature using a simple spin coating method. It has been observed that there is 16% increase in efficiency after Oleylamine coating. Further, the solar cell was subjected to standard characterization namely current-voltage measurement for electrical parameters and Fourier transform infrared spectroscopy to understand the interaction of emitter surface and passivating Oleylamine. However, the passivation layer is not stable due to the reaction between Oleylamine and ambient air content such as humidity and carbon dioxide. This degradation can be prevented with suitable overcoating.

DIAGNOSTICS OF BNL ERL

DOE Office of Scientific and Technical Information (OSTI.GOV)

POZDEYEV,E.; BEN-ZVI, I.; CAMERON, P.

2007-06-25

The ERL Prototype project is currently under development at the Brookhaven National Laboratory. The ERL is expected to demonstrate energy recovery of high-intensity beams with a current of up to a few hundred milliamps, while preserving the emittance of bunches with a charge of a few nanocoulombs produced by a high-current SRF gun. To successfully accomplish this task the machine will include beam diagnostics that will be used for accurate characterization of the three dimensional beam phase space at the injection and recirculation energies, transverse and longitudinal beam matching, orbit alignment, beam current measurement, and machine protection. This paper outlinesmore » requirements on the ERL diagnostics and describes its setup and modes of operation.« less

High gradient rf gun studies of CsBr photocathodes

DOE PAGES

Vecchione, Theodore; Maldonado, Juan R.; Gierman, Stephen; ...

2015-04-03

CsBr photocathodes have 10 times higher quantum efficiency with only 3 times larger intrinsic transverse emittance than copper. They are robust and can withstand 80 MV/m fields without breaking down or emitting dark current. They can operate in 2×10⁻⁹ torr vacuum and survive exposure to air. They are well suited for generating high pulse charge in rf guns without a photocathode transfer system.

Self aligning electron beam gun having enhanced thermal and mechanical stability

DOEpatents

Scarpetti, Jr., Raymond D.; Parkison, Clarence D.; Switzer, Vernon A.; Lee, Young J.; Sawyer, William C.

1995-01-01

A compact, high power electron gun having enhanced thermal and mechanical stability which incorporates a mechanically coupled, self aligning structure for the anode and cathode. The enhanced stability, and reduced need for realignment of the cathode to the anode and downstream optics during operation are achieved by use of a common support structure for the cathode and anode which requires no adjustment screws or spacers. The electron gun of the present invention also incorporates a modular design for the cathode, in which the electron emitter, its support structure, and the hardware required to attach the emitter assembly to the rest of the gun are a single element. This modular design makes replacement of the emitter simpler and requires no realignment after a new emitter has been installed. Compactness and a reduction in the possibility of high voltage breakdown are achieved by shielding the "triple point" where the electrode, insulator, and vacuum meet. The use of electric discharge machining (EDM) for fabricating the emitter allows for the accurate machining of the emitter into intricate shapes without encountering the normal stresses developed by standard emitter fabrication techniques.

Nanostructured GaAs solar cells via metal-assisted chemical etching of emitter layers.

PubMed

Song, Yunwon; Choi, Keorock; Jun, Dong-Hwan; Oh, Jungwoo

2017-10-02

GaAs solar cells with nanostructured emitter layers were fabricated via metal-assisted chemical etching. Au nanoparticles produced via thermal treatment of Au thin films were used as etch catalysts to texture an emitter surface with nanohole structures. Epi-wafers with emitter layers 0.5, 1.0, and 1.5 um in thickness were directly textured and a window layer removal process was performed before metal catalyst deposition. A nanohole-textured emitter layer provides effective light trapping capabilities, reducing the surface reflection of a textured solar cell by 11.0%. However, because the nanostructures have high surface area to volume ratios and large numbers of defects, various photovoltaic properties were diminished by high recombination losses. Thus, we have studied the application of nanohole structures to GaAs emitter solar cells and investigated the cells' antireflection and photovoltaic properties as a function of the nanohole structure and emitter thickness. Due to decreased surface reflection and improved shunt resistance, the solar cell efficiency increased from 4.25% for non-textured solar cells to 7.15% for solar cells textured for 5 min.

Long-term, correlated emittance decrease in intense, high-brightness induction linacs

NASA Astrophysics Data System (ADS)

Carlsten, Bruce E.

1999-09-01

Simulations of high-brightness induction linacs often show a slow, long-term emittance decrease as the beam is matched from the electron gun into the linac. Superimposed on this long-term decrease are rapid emittance oscillations. These effects can be described in terms of correlations in the beam's radial phase space. The rapid emittance oscillations are due to transverse plasma oscillations, which stay nearly in phase for different radial positions within the beam. The initial emittance, just after the electron gun, is dominated by nonlinear focusing within the gun introduced by the anode exit hole. Due to the large space-charge force of an intense electron beam, the focusing of the beam through the matching section introduces an effective nonlinear force (from the change in the particles' potential energies) which counteracts the nonlinearities from the electron gun, leading to an average, long-term emittance decrease. Not all of the initial nonlinearity is removed by the matching procedure, and there are important consequences both for emittance measurements using solenoid focal length scans and for focusing the electron beam to a target.

Further Studies on the Effect of SiN x Refractive Index and Emitter Sheet Resistance on Potential-Induced Degradation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oh, Jaewon; Dauksher, Bill; Bowden, Stuart

We present the impacts of silicon nitride (SiNx) antireflection coating refractive index and emitter sheet resistance on potential-induced degradation of the shunting type (PID-s). Previously, it has been shown that the cell becomes more PID-s-susceptible as the refractive index decreases or the emitter sheet resistance increases. To verify the effect of refractive index on PID-s, we fabricated cells with varying SiN x refractive index (1.87, 1.94, 2.05) on typical p-type base solar cells with ~60 Ω/sq emitters. However, none of these cells showed output power degradation, regardless of the refractive index. Further investigation of the emitter showed that the PID-smore » was suppressed at ~60 Ω/sq due to the extremely high surface phosphorus concentration (6 x 10 21 cm -3), as measured by secondary ion mass spectrometry. Furthermore, PID-s was observed on cells possessing a high emitter sheet resistance (~80 Ω/sq). In conclusion, the emitter surface phosphorus concentration plays an important role in determining PID-s susceptibility.« less

Further Studies on the Effect of SiN x Refractive Index and Emitter Sheet Resistance on Potential-Induced Degradation

DOE PAGES

Oh, Jaewon; Dauksher, Bill; Bowden, Stuart; ...

2017-01-11

We present the impacts of silicon nitride (SiNx) antireflection coating refractive index and emitter sheet resistance on potential-induced degradation of the shunting type (PID-s). Previously, it has been shown that the cell becomes more PID-s-susceptible as the refractive index decreases or the emitter sheet resistance increases. To verify the effect of refractive index on PID-s, we fabricated cells with varying SiN x refractive index (1.87, 1.94, 2.05) on typical p-type base solar cells with ~60 Ω/sq emitters. However, none of these cells showed output power degradation, regardless of the refractive index. Further investigation of the emitter showed that the PID-smore » was suppressed at ~60 Ω/sq due to the extremely high surface phosphorus concentration (6 x 10 21 cm -3), as measured by secondary ion mass spectrometry. Furthermore, PID-s was observed on cells possessing a high emitter sheet resistance (~80 Ω/sq). In conclusion, the emitter surface phosphorus concentration plays an important role in determining PID-s susceptibility.« less

A new method for the estimation of high temperature radiant heat emittance by means of aero-acoustic levitation

NASA Astrophysics Data System (ADS)

Greffrath, Fabian; Prieler, Robert; Telle, Rainer

2014-11-01

A new method for the experimental estimation of radiant heat emittance at high temperatures has been developed which involves aero-acoustic levitation of samples, laser heating and contactless temperature measurement. Radiant heat emittance values are determined from the time dependent development of the sample temperature which requires analysis of both the radiant and convective heat transfer towards the surroundings by means of fluid dynamics calculations. First results for the emittance of a corundum sample obtained with this method are presented in this article and found in good agreement with literature values.

Innovative single-shot diagnostics for electrons accelerated through laser-plasma interaction at FLAME

NASA Astrophysics Data System (ADS)

Bisesto, F. G.; Anania, M. P.; Chiadroni, E.; Cianchi, A.; Costa, G.; Curcio, A.; Ferrario, M.; Galletti, M.; Pompili, R.; Schleifer, E.; Zigler, A.

2017-05-01

Plasma wakefield acceleration is the most promising acceleration technique known nowadays, able to provide very high accelerating fields (> 100 GV/m), enabling acceleration of electrons to GeV energy in few centimeters. Here we present all the plasma related activities currently underway at SPARC LAB exploiting the high power laser FLAME. In particular, we will give an overview of the single shot diagnostics employed: Electro Optic Sampling (EOS) for temporal measurement and optical transition radiation (OTR) for an innovative one shot emittance measurements. In detail, the EOS technique has been employed to measure for the first time the longitudinal profile of electric field of fast electrons escaping from a solid target, driving the ions and protons acceleration, and to study the impact of using different target shapes. Moreover, a novel scheme for one shot emittance measurements based on OTR, developed and tested at SPARC LAB LINAC, will be shown.

HIGH-ENERGY X-RAY PINHOLE CAMERA FOR HIGH-RESOLUTION ELECTRON BEAM SIZE MEASUREMENTS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, B.; Morgan, J.; Lee, S.H.

The Advanced Photon Source (APS) is developing a multi-bend achromat (MBA) lattice based storage ring as the next major upgrade, featuring a 20-fold reduction in emittance. Combining the reduction of beta functions, the electron beam sizes at bend magnet sources may be reduced to reach 5 – 10 µm for 10% vertical coupling. The x-ray pinhole camera currently used for beam size monitoring will not be adequate for the new task. By increasing the operating photon energy to 120 – 200 keV, the pinhole camera’s resolution is expected to reach below 4 µm. The peak height of the pinhole imagemore » will be used to monitor relative changes of the beam sizes and enable the feedback control of the emittance. We present the simulation and the design of a beam size monitor for the APS storage ring.« less

IBS simulation with different RF configurations in RHIC

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, C.; Fedotov, A.; Minty, M.

It is a crucial task to understand the beam emittance growth during RHIC cycle and the underlying causes. One would benefit not just for the current operation of RHIC, also for the design of eRHIC. This report focuses on the Intra-Beam Scattering (IBS) contribution to the emittance growth of the proton beam with two different configurations of RF system. The answers to these questions will be given in the end of the report; can IBS explain the emittance growth all alone? What’s the difference of IBS growth rates for different RF configurations?

Wavelength locking of single emitters and multi-emitter modules: simulation and experiments

NASA Astrophysics Data System (ADS)

Yanson, Dan; Rappaport, Noam; Peleg, Ophir; Berk, Yuri; Dahan, Nir; Klumel, Genady; Baskin, Ilya; Levy, Moshe

2016-03-01

Wavelength-stabilized high-brightness single emitters are commonly used in fiber-coupled laser diode modules for pumping Yb-doped lasers at 976 nm, and Nd-doped ones at 808 nm. We investigate the spectral behavior of single emitters under wavelength-selective feedback from a volume Bragg (or hologram) grating (VBG) in a multi-emitter module. By integrating a full VBG model as a multi-layer thin film structure with commercial raytracing software, we simulated wavelength locking conditions as a function of beam divergence and angular alignment tolerances. Good correlation between the simulated VBG feedback strength and experimentally measured locking ranges, in both VBG misalignment angle and laser temperature, is demonstrated. The challenges of assembling multi-emitter modules based on beam-stacked optical architectures are specifically addressed, where the wavelength locking conditions must be achieved simultaneously with high fiber coupling efficiency for each emitter in the module. It is shown that angular misorientation between fast and slow-axis collimating optics can have a dramatic effect on the spectral and power performance of the module. We report the development of our NEON-S wavelength-stabilized fiber laser pump module, which uses a VBG to provide wavelength-selective optical feedback in the collimated portion of the beam. Powered by our purpose-developed high-brightness single emitters, the module delivers 47 W output at 11 A from an 0.15 NA fiber and a 0.3 nm linewidth at 976 nm. Preliminary wavelength-locking results at 808 nm are also presented.

Large area InN terahertz emitters based on the lateral photo-Dember effect

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wallauer, Jan, E-mail: jan.wallauer@fmf.uni-freiburg.de; Grumber, Christian; Walther, Markus

2015-09-14

Large area terahertz emitters based on the lateral photo-Dember effect in InN (indium nitride) are presented. The formation of lateral photo-Dember currents is induced by laser-illumination through a microstructured metal cover processed onto the InN substrate, causing an asymmetry in the lateral photogenerated charge carrier distribution. Our design uses simple metal structures, which are produced by conventional two-dimensional micro-structuring techniques. Having favoring properties as a photo-Dember material InN is particularly well-suited as a substrate for our emitters. We demonstrate that the emission intensity of the emitters can be significantly influenced by the structure of the metal cover leaving room formore » improvement by optimizing the masking structures.« less

Development of techniques and associated instrumentation for high temperature emissivity measurements

NASA Technical Reports Server (NTRS)

Cunnington, G. R.; Funai, A. I.

1972-01-01

The progress during the sixth quarterly period is reported on construction and assembly of a test facility to determine the high temperature emittance properties of candidate thermal protection system materials for the space shuttle. This facility will provide simulation of such reentry environment parameters as temperature, pressure, and gas flow rate to permit studies of the effects of these parameters on the emittance stability of the materials. Also reported are the completed results for emittance tests on a set of eight Rene 41 samples and one anodized titanium alloy sample which were tested at temperatures up to 1600 F in vacuum. The data includes calorimetric determinations of total hemispherical emittance, radiometric determinations of total and spectral normal emittance, and pre- and post-test room temperature reflectance measurements.

Rare Earth Doped Yttrium Aluminum Garnet (YAG) Selective Emitters

NASA Technical Reports Server (NTRS)

Chubb, Donald L.; Pal, AnnaMarie T.; Patton, Martin O.; Jenkins, Phillip P.

1999-01-01

As a result of their electron structure, rare earth ions in crystals at high temperature emit radiation in several narrow bands rather than in a continuous blackbody manner. This study presents a spectral emittance model for films and cylinders of rare earth doped yttrium aluminum garnets. Good agreement between experimental and theoretical film spectral emittances was found for erbium and holmium aluminum garnets. Spectral emittances of films are sensitive to temperature differences across the film. For operating conditions of interest, the film emitter experiences a linear temperature variation whereas the cylinder emitter has a more advantageous uniform temperature. Emitter efficiency is also a sensitive function of temperature. For holminum aluminum garnet film the efficiency is 0.35 at 1446K but only 0.27 at 1270 K.

The First NREL Conference on thermophotovoltaic generation of electricity: Proceedings

DOE Office of Scientific and Technical Information (OSTI.GOV)

Not Available

1994-08-01

This collection of abstracts from the July 1994 meeting contains various information on thermophotovoltaic (TPV) conversion and converters. Discussed topics include: the current status of TPV conversion, TPV tutorials, heat source and emitter technologies, advanced TPV devices, selective emitter theory and practice, programmatic and systems issues, device fundamentals, and device and material characterization.

On the Ionization and Ion Transmission Efficiencies of Different ESI-MS Interfaces

PubMed Central

Cox, Jonathan T.; Marginean, Ioan; Smith, Richard D.; Tang, Keqi

2014-01-01

The achievable sensitivity of electrospray ionization mass spectrometry (ESI-MS) is largely determined by the ionization efficiency in the ESI source and ion transmission efficiency through the ESI-MS interface. These performance characteristics are difficult to evaluate and compare across multiple platforms as it is difficult to correlate electrical current measurements to actual analyte ions reaching the detector of a mass spectrometer. We present an effective method to evaluate the overall ion utilization efficiency of an ESI-MS interface by measuring the total gas phase ion current transmitted through the interface and correlating it to the observed ion abundance measured in the corresponding mass spectrum. Using this method we systematically studied the ion transmission and ionization efficiencies of different ESI-MS interface configurations, including a single emitter/single inlet capillary, single emitter/multi-inlet capillary, and a subambient pressure ionization with nanoelectrospray (SPIN) MS interface with a single emitter and an emitter array, respectively. Our experimental results indicate that the overall ion utilization efficiency of SPIN-MS interface configurations exceeds that of the inlet capillary-based ESI-MS interface configurations. PMID:25267087

On the ionization and ion transmission efficiencies of different ESI-MS interfaces.

PubMed

Cox, Jonathan T; Marginean, Ioan; Smith, Richard D; Tang, Keqi

2015-01-01

The achievable sensitivity of electrospray ionization mass spectrometry (ESI-MS) is largely determined by the ionization efficiency in the ESI source and ion transmission efficiency through the ESI-MS interface. These performance characteristics are difficult to evaluate and compare across multiple platforms as it is difficult to correlate electrical current measurements to actual analyte ions reaching the detector of a mass spectrometer. We present an effective method to evaluate the overall ion utilization efficiency of an ESI-MS interface by measuring the total gas-phase ion current transmitted through the interface and correlating it to the observed ion abundance measured in the corresponding mass spectrum. Using this method, we systematically studied the ion transmission and ionization efficiencies of different ESI-MS interface configurations, including a single emitter/single inlet capillary, single emitter/multi-inlet capillary, and a subambient pressure ionization with nanoelectrospray (SPIN) MS interface with a single emitter and an emitter array, respectively. Our experimental results indicate that the overall ion utilization efficiency of SPIN-MS interface configurations exceeds that of the inlet capillary-based ESI-MS interface configurations.

The effects of atomic oxygen on the thermal emittance of high temperature radiator surfaces

NASA Technical Reports Server (NTRS)

Rutledge, Sharon K.; Hotes, Deborah L.; Paulsen, Phillip E.

1989-01-01

Radiator surfaces on high temperature space power systems such as SP-100 space nuclear power system must maintain a high emittance level in order to reject waste heat effectively. One of the primary materials under consideration for the radiators is carbon-carbon composite. Since carbon is susceptible to attack by atomic oxygen in the low earth orbital environment, it is important to determine the durability of carbon composites in this environment as well as the effect atomic oxygen has on the thermal emittance of the surface if it is to be considered for use as a radiator. Results indicate that the thermal emittance of carbon-carbon composite (as low as 0.42) can be enhanced by exposure to a directed beam of atomic oxygen to levels above 0.85 at 800 K. This emittance enhancement is due to a change in the surface morphology as a result of oxidation. High aspect ratio cones are formed on the surface which allow more efficient trapping of incident radiation. Erosion of the surface due to oxidation is similar to that for carbon, so that at altitudes less than approximately 600 km, thickness loss of the radiator could be significant (as much as 0.1 cm/year). A protective coating or oxidation barrier forming additive may be needed to prevent atomic oxygen attack after the initial high emittance surface is formed. Textured surfaces can be formed in ground based facilities or possibly in space if emittance is not sensitive to the orientation of the atomic oxygen arrival that forms the texture.

On the feasibility of sub-100 nm rad emittance measurement in plasma accelerators using permanent magnetic quadrupoles

NASA Astrophysics Data System (ADS)

Li, F.; Wu, Y. P.; Nie, Z.; Guo, B.; Zhang, X. H.; Huang, S.; Zhang, J.; Cheng, Z.; Ma, Y.; Fang, Y.; Zhang, C. J.; Wan, Y.; Xu, X. L.; Hua, J. F.; Pai, C. H.; Lu, W.; Gu, Y. Q.

2018-01-01

Low emittance (sub-100 nm rad) measurement of electron beams in plasma accelerators has been a challenging issue for a while. Among various measurement schemes, measurements based on single-shot quad-scan using permanent magnetic quadrupoles (PMQs) has been recently reported with emittance as low as ˜200 nm Weingartner (2012 Phys. Rev. Spec. Top. Accel. Beams 15 111302). However, the accuracy and reliability of this method have not been systematically analyzed. Such analysis is critical for evaluating the potential of sub-100 nm rad emittance measurement using any scheme. In this paper, we analyze the effects of various nonideal physical factors on the accuracy and reliability using the PMQ method. These factors include aberration induced by a high order field, PMQ misalignment and angular fluctuation of incoming beams. Our conclusions are as follows: (i) the aberrations caused by high order fields of PMQs are relatively weak for low emittance measurement as long as the PMQs are properly constructed. A series of PMQs were manufactured and measured at Tsinghua University, and using numerical simulations their high order field effects were found to be negligible . (ii) The largest measurement error of emittance is caused by the angular misalignment between PMQs. For low emittance measurement of ˜100 MeV beams, an angular alignment accuracy of 0.1° is necessary. This requirement can be eased for beams with higher energies. (iii) The transverse position misalignment of PMQs and angular fluctuation of incoming beams only cause a translational and rotational shift of measured signals, respectively, therefore, there is no effect on the measured value of emittance. (iv) The spatial resolution and efficiency of the detection system need to be properly designed to guarantee the accuracy of sub-100 nm rad emittance measurement.

All Solution-processed Stable White Quantum Dot Light-emitting Diodes with Hybrid ZnO@TiO2 as Blue Emitters

PubMed Central

Chen, Jing; Zhao, Dewei; Li, Chi; Xu, Feng; Lei, Wei; Sun, Litao; Nathan, Arokia; Sun, Xiao Wei

2014-01-01

White quantum dot light-emitting diodes (QD-LEDs) have been a promising candidate for high-efficiency and color-saturated displays. However, it is challenging to integrate various QD emitters into one device and also to obtain efficient blue QDs. Here, we report a simply solution-processed white QD-LED using a hybrid ZnO@TiO2 as electron injection layer and ZnCdSeS QD emitters. The white emission is obtained by integrating the yellow emission from QD emitters and the blue emission generated from hybrid ZnO@TiO2 layer. We show that the performance of white QD-LEDs can be adjusted by controlling the driving force for hole transport and electroluminescence recombination region via varying the thickness of hole transport layer. The device is demonstrated with a maximum luminance of 730 cd/m2 and power efficiency of 1.7 lm/W, exhibiting the Commission Internationale de l'Enclairage (CIE) coordinates of (0.33, 0.33). The unencapsulated white QD-LED has a long lifetime of 96 h at its initial luminance of 730 cd/m2, primarily due to the fact that the device with hybrid ZnO@TiO2 has low leakage current and is insensitive to the oxygen and the moisture. These results indicate that hybrid ZnO@TiO2 provides an alternate and effective approach to achieve high-performance white QD-LEDs and also other optoelectronic devices. PMID:24522341

Low energy ion beam dynamics of NANOGAN ECR ion source

NASA Astrophysics Data System (ADS)

Kumar, Sarvesh; Mandal, A.

2016-04-01

A new low energy ion beam facility (LEIBF) has been developed for providing the mass analyzed highly charged intense ion beams of energy ranging from a few tens of keV to a few MeV for atomic, molecular and materials sciences research. The new facility consists of an all permanent magnet 10 GHz electron cyclotron resonance (ECR) ion source (NANOGAN) installed on a high voltage platform (400 kV) which provides large currents of multiply charged ion beams. Higher emittance at low energy of intense ion beam puts a tremendous challenge to the beam optical design of this facility. The beam line consists of mainly the electrostatic quadrupoles, an accelerating section, analyzing cum switching magnet and suitable beam diagnostics including vacuum components. The accelerated ion beam is analyzed for a particular mass to charge (m/q) ratio as well as guided to three different lines along 75°, 90° and 105° using a large acceptance analyzing cum switching magnet. The details of transverse beam optics to all the beam lines with TRANSPORT and GICOSY beam optics codes are being described. Field computation code, OPERA 3D has been utilized to design the magnets and electrostatic quadrupoles. A theoretical estimation of emittance for optimized geometry of ion source is given so as to form the basis of beam optics calculations. The method of quadrupole scan of the beam is used to characterize the emittance of the final beam on the target. The measured beam emittance increases with m/q ratios of various ion beams similar to the trend observed theoretically.

Development of a radio-frequency quadrupole cooler for high beam currents

NASA Astrophysics Data System (ADS)

Boussaid, Ramzi; Ban, G.; Quéméner, G.; Merrer, Y.; Lorry, J.

2017-12-01

The SHIRaC prototype is a recently developed radio-frequency quadrupole (RFQ) beam cooler with an improved optics design to deliver the required beam quality to a high resolution separator (HRS). For an isobaric separation of isotopes, the HRS demands beams with emittance not exceeding 3 π mm mrad and longitudinal energy spread ˜1 eV . Simulation studies showed a significant contribution of the buffer gas diffusion, space charge effect and mainly the rf fringe field to degrade the achieved beam quality at the RFQ exit. A miniature rf quadrupole (μ RFQ ) has been implemented at that exit to remove the degrading effects and provide beams with 1 eV of energy spread and around 1.75 π mm mrad of emittance for 4 Pa gas pressure. This solution enables also to transmit more than 60% of the incoming ions for currents up to 1 μ A . Detailed studies of this development are presented and discussed in this paper. Transport of beams from SHIRaC towards the HRS has been done with an electrostatic quadrupole triplet. Simulations and first experimental tests showed that more than 95% of ions can reach the HRS. Because SPIRAL-2 beams are of high current and very radioactive, the buffer gas will be highly contaminated. Safe maintenance of the SHIRaC beam line needs exceptional treatment of radioactive contaminants. For that, special vinyl sleep should be mounted on elements to be maintained. A detailed maintenance process will be presented.

Increase of intrinsic emittance induced by multiphoton photoemission from copper cathodes illuminated by femtosecond laser pulses

NASA Astrophysics Data System (ADS)

An, Chenjie; Zhu, Rui; Xu, Jun; Liu, Yaqi; Hu, Xiaopeng; Zhang, Jiasen; Yu, Dapeng

2018-05-01

Electron sources driven by femtosecond laser have important applications in many aspects, and the research about the intrinsic emittance is becoming more and more crucial. The intrinsic emittance of polycrystalline copper cathode, which was illuminated by femtosecond pulses (FWHM of the pulse duration was about 100 fs) with photon energies above and below the work function, was measured with an extremely low bunch charge (single-electron pulses) based on free expansion method. A minimum emittance was obtained at the photon energy very close to the effective work function of the cathode. When the photon energy decreased below the effective work function, emittance increased rather than decreased or flattened out to a constant. By investigating the dependence of photocurrent density on the incident laser intensity, we found the emission excited by pulsed photons with sub-work-function energies contained two-photon photoemission. In addition, the portion of two-photon photoemission current increased with the reduction of photon energy. We attributed the increase of emittance to the effect of two-photon photoemission. This work shows that conventional method of reducing the photon energy of excited light source to approach the room temperature limit of the intrinsic emittance may be infeasible for femtosecond laser. There would be an optimized photon energy value near the work function to obtain the lowest emittance for pulsed laser pumped photocathode.

New progress of high current gasdynamic ion source (invited)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Skalyga, V., E-mail: skalyga@ipfran.ru; Sidorov, A.; Vodopyanov, A.

2016-02-15

The experimental and theoretical research carried out at the Institute of Applied Physics resulted in development of a new type of electron cyclotron resonance ion sources (ECRISs)—the gasdynamic ECRIS. The gasdynamic ECRIS features a confinement mechanism in a magnetic trap that is different from Geller’s ECRIS confinement, i.e., the quasi-gasdynamic one similar to that in fusion mirror traps. Experimental studies of gasdynamic ECRIS were performed at Simple Mirror Ion Source (SMIS) 37 facility. The plasma was created by 37.5 and 75 GHz gyrotron radiation with power up to 100 kW. High frequency microwaves allowed to create and sustain plasma withmore » significant density (up to 8 × 10{sup 13} cm{sup −3}) and to maintain the main advantages of conventional ECRIS such as high ionization degree and low ion energy. Reaching such high plasma density relies on the fact that the critical density grows with the microwave frequency squared. High microwave power provided the average electron energy on a level of 50-300 eV enough for efficient ionization even at neutral gas pressure range of 10{sup −4}–10{sup −3} mbar. Gasdynamic ECRIS has demonstrated a good performance producing high current (100-300 mA) multi-charged ion beams with moderate average charge (Z = 4-5 for argon). Gasdynamic ECRIS has appeared to be especially effective in low emittance hydrogen and deuterium beams formation. Proton beams with current up to 500 emA and RMS emittance below 0.07 π ⋅ mm ⋅ mrad have been demonstrated in recent experiments.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bustamante, Mauricio; Heinze, Jonas; Winter, Walter

Gamma-ray bursts (GRBs) are promising as sources of neutrinos and cosmic rays. In the internal shock scenario, blobs of plasma emitted from a central engine collide within a relativistic jet and form shocks, leading to particle acceleration and emission. Motivated by present experimental constraints and sensitivities, we improve the predictions of particle emission by investigating time-dependent effects from multiple shocks. We produce synthetic light curves with different variability timescales that stem from properties of the central engine. For individual GRBs, qualitative conclusions about model parameters, neutrino production efficiency, and delays in high-energy gamma-rays can be deduced from inspection of themore » gamma-ray light curves. GRBs with fast time variability without additional prominent pulse structure tend to be efficient neutrino emitters, whereas GRBs with fast variability modulated by a broad pulse structure can be inefficient neutrino emitters and produce delayed high-energy gamma-ray signals. Our results can be applied to quantitative tests of the GRB origin of ultra-high-energy cosmic rays, and have the potential to impact current and future multi-messenger searches.« less

Carbon and metal nanotube hybrid structures on graphene as efficient electron field emitters

NASA Astrophysics Data System (ADS)

Heo, Kwang; Lee, Byung Yang; Lee, Hyungwoo; Cho, Dong-guk; Arif, Muhammad; Kim, Kyu Young; Choi, Young Jin; Hong, Seunghun

2016-07-01

We report a facile and efficient method for the fabrication of highly-flexible field emission devices by forming tubular hybrid structures based on carbon nanotubes (CNTs) and nickel nanotubes (Ni NTs) on graphene-based flexible substrates. By employing an infiltration process in anodic alumina oxide (AAO) templates followed by Ni electrodeposition, we could fabricate CNT-wrapped Ni NT/graphene hybrid structures. During the electrodeposition process, the CNTs served as Ni nucleation sites, resulting in a large-area array of high aspect-ratio field emitters composed of CNT-wrapped Ni NT hybrid structures. As a proof of concepts, we demonstrate that high-quality flexible field emission devices can be simply fabricated using our method. Remarkably, our proto-type field emission devices exhibited a current density higher by two orders of magnitude compared to other devices fabricated by previous methods, while maintaining its structural integrity in various bending deformations. This novel fabrication strategy can be utilized in various applications such as optoelectronic devices, sensors and energy storage devices.

Carbon and metal nanotube hybrid structures on graphene as efficient electron field emitters.

PubMed

Heo, Kwang; Lee, Byung Yang; Lee, Hyungwoo; Cho, Dong-Guk; Arif, Muhammad; Kim, Kyu Young; Choi, Young Jin; Hong, Seunghun

2016-07-08

We report a facile and efficient method for the fabrication of highly-flexible field emission devices by forming tubular hybrid structures based on carbon nanotubes (CNTs) and nickel nanotubes (Ni NTs) on graphene-based flexible substrates. By employing an infiltration process in anodic alumina oxide (AAO) templates followed by Ni electrodeposition, we could fabricate CNT-wrapped Ni NT/graphene hybrid structures. During the electrodeposition process, the CNTs served as Ni nucleation sites, resulting in a large-area array of high aspect-ratio field emitters composed of CNT-wrapped Ni NT hybrid structures. As a proof of concepts, we demonstrate that high-quality flexible field emission devices can be simply fabricated using our method. Remarkably, our proto-type field emission devices exhibited a current density higher by two orders of magnitude compared to other devices fabricated by previous methods, while maintaining its structural integrity in various bending deformations. This novel fabrication strategy can be utilized in various applications such as optoelectronic devices, sensors and energy storage devices.

Highly efficient and stable organic light-emitting diodes with a greatly reduced amount of phosphorescent emitter

PubMed Central

Fukagawa, Hirohiko; Shimizu, Takahisa; Kamada, Taisuke; Yui, Shota; Hasegawa, Munehiro; Morii, Katsuyuki; Yamamoto, Toshihiro

2015-01-01

Organic light-emitting diodes (OLEDs) have been intensively studied as a key technology for next-generation displays and lighting. The efficiency of OLEDs has improved markedly in the last 15 years by employing phosphorescent emitters. However, there are two main issues in the practical application of phosphorescent OLEDs (PHOLEDs): the relatively short operational lifetime and the relatively high cost owing to the costly emitter with a concentration of about 10% in the emitting layer. Here, we report on our success in resolving these issues by the utilization of thermally activated delayed fluorescent materials, which have been developed in the past few years, as the host material for the phosphorescent emitter. Our newly developed PHOLED employing only 1 wt% phosphorescent emitter exhibits an external quantum efficiency of over 20% and a long operational lifetime of about 20 times that of an OLED consisting of a conventional host material and 1 wt% phosphorescent emitter. PMID:25985084

Highly efficient blue and warm white organic light-emitting diodes with a simplified structure

NASA Astrophysics Data System (ADS)

Li, Xiang-Long; Ouyang, Xinhua; Chen, Dongcheng; Cai, Xinyi; Liu, Ming; Ge, Ziyi; Cao, Yong; Su, Shi-Jian

2016-03-01

Two blue fluorescent emitters were utilized to construct simplified organic light-emitting diodes (OLEDs) and the remarkable difference in device performance was carefully illustrated. A maximum current efficiency of 4.84 cd A-1 (corresponding to a quantum efficiency of 4.29%) with a Commission Internationale de l’Eclairage (CIE) coordinate of (0.144, 0.127) was achieved by using N,N-diphenyl-4″-(1-phenyl-1H-benzo[d]imidazol-2-yl)-[1, 1‧:4‧, 1″-terphenyl]-4-amine (BBPI) as a non-doped emission layer of the simplified blue OLEDs without carrier-transport layers. In addition, simplified fluorescent/phosphorescent (F/P) hybrid warm white OLEDs without carrier-transport layers were fabricated by utilizing BBPI as (1) the blue emitter and (2) the host of a complementary yellow phosphorescent emitter (PO-01). A maximum current efficiency of 36.8 cd A-1 and a maximum power efficiency of 38.6 lm W-1 were achieved as a result of efficient energy transfer from the host to the guest and good triplet exciton confinement on the phosphorescent molecules. The blue and white OLEDs are among the most efficient simplified fluorescent blue and F/P hybrid white devices, and their performance is even comparable to that of most previously reported complicated multi-layer devices with carrier-transport layers.

Thermionic gas switch

DOEpatents

Hatch, G.L.; Brummond, W.A.; Barrus, D.M.

1984-04-05

The present invention is directed to an improved temperature responsive thermionic gas switch utilizing a hollow cathode and a folded emitter surface area. The folded emitter surface area of the thermionic switch substantially increases the on/off ratio by changing the conduction surface area involved in the two modes thereof. The improved switch of this invention provides an on/off ratio of 450:1 compared to the 10:1 ratio of the prior known thermionic switch, while providing for adjusting the on current. In the improved switch of this invention the conduction area is made small in the off mode, while in the on mode the conduction area is made large. This is achieved by utilizing a folded hollow cathode configuration and utilizing a folded emitter surface area, and by making the dimensions of the folds small enough so that a space charge will develop in the convolutions of the folds and suppress unignited current, thus limiting the current carrying surface in the off mode.

Emitter location errors in electronic recognition system

NASA Astrophysics Data System (ADS)

Matuszewski, Jan; Dikta, Anna

2017-04-01

The paper describes some of the problems associated with emitter location calculations. This aspect is the most important part of the series of tasks in the electronic recognition systems. The basic tasks include: detection of emission of electromagnetic signals, tracking (determining the direction of emitter sources), signal analysis in order to classify different emitter types and the identification of the sources of emission of the same type. The paper presents a brief description of the main methods of emitter localization and the basic mathematical formulae for calculating their location. The errors' estimation has been made to determine the emitter location for three different methods and different scenarios of emitters and direction finding (DF) sensors deployment in the electromagnetic environment. The emitter has been established using a special computer program. On the basis of extensive numerical calculations, the evaluation of precise emitter location in the recognition systems for different configuration alignment of bearing devices and emitter was conducted. The calculations which have been made based on the simulated data for different methods of location are presented in the figures and respective tables. The obtained results demonstrate that calculation of the precise emitter location depends on: the number of DF sensors, the distances between emitter and DF sensors, their mutual location in the reconnaissance area and bearing errors. The precise emitter location varies depending on the number of obtained bearings. The higher the number of bearings, the better the accuracy of calculated emitter location in spite of relatively high bearing errors for each DF sensor.

Characteristics of the fourth order resonance in high intensity linear accelerators

NASA Astrophysics Data System (ADS)

Jeon, D.; Hwang, Kyung Ryun

2017-06-01

For the 4σ = 360° space-charge resonance in high intensity linear accelerators, the emittance growth is surveyed for input Gaussian beams, as a function of the depressed phase advance per cell σ and the initial tune depression (σo - σ). For each data point, the linac lattice is designed such that the fourth order resonance dominates over the envelope instability. The data show that the maximum emittance growth takes place at σ ≈ 87° over a wide range of the tune depression (or beam current), which confirms that the relevant parameter for the emittance growth is σ and that for the bandwidth is σo - σ. An interesting four-fold phase space structure is observed that cannot be explained with the fourth order resonance terms alone. Analysis attributes this effect to a small negative sixth order detuning term as the beam is redistributed by the resonance. Analytical studies show that the tune increases monotonically for the Gaussian beam which prevents the resonance for σ > 90°. Frequency analysis indicates that the four-fold structure observed for input Kapchinskij-Vladmirskij beams when σ < 90°, is not the fourth order resonance but a fourth order envelope instability because the 1/4 = 90°/360° component is missing in the frequency spectrum.

Graphene for thermoelectronic solar energy conversion

NASA Astrophysics Data System (ADS)

De, Dilip K.; Olukunle, Olawole C.

2017-08-01

Graphene is a high temperature material which can stand temperature as high as 4600 K in vacuum. Even though its work function is high (4.6 eV) the thermionic emission current density at such temperature is very high. Graphene is a wonderful material whose work function can be engineered as desired. Kwon et al41 reported a chemical approach to reduce work function of graphene using K2CO3, Li2CO3, Rb2CO3, Cs2CO3. The work functions are reported to be 3.7 eV, 3.8 eV, 3.5 eV and 3.4 eV. Even though they did not report the high temperature tolerance of such alkali metal carbonate doped graphene, their works open a great promise for use of pure graphene and doped graphene as emitter (cathode) and collector (anode) in a solar thermionic energy converter. This paper discusses the dynamics of solar energy conversion to electrical energy using thermionic energy converter with graphene as emitter and collector. We have considered parabolic mirror concentrator to focus solar energy onto the emitter to achieve temperature around 4300 K. Our theoretical calculations and the modelling show that efficiency as high as 55% can easily be achieved if space-charge problem can be reduced and the collector can be cooled to certain proper temperature. We have discussed methods of controlling the associated space-charge problems. Richardson-Dushman equation modified by the authors have been used in this modelling. Such solar energy conversion would reduce the dependence on silicon solar panel and has great potential for future applications.

Heavy doping effects in high efficiency silicon solar cells

NASA Technical Reports Server (NTRS)

Lindholm, F. A.; Neugroschel, A.

1985-01-01

The use of a (silicon)/(heavily doped polysilicon)/(metal) structure to replace the conventional high-low junction (or back-surface-field, BSF) structure of silicon solar cells was examined. The results of an experimental study designed to explore both qualitatively and quantitatively the mechanism of the improved current gain in bipolar transistors with polysilicon emitter contact are presented. A reciprocity theorem is presented that relates the short circuit current of a device, induced by a carrier generation source, to the minority carrier Fermi level in the dark. A method for accurate measurement of minority-carrier diffusion coefficients in silicon is described.

Arc-textured high emittance radiator surfaces

NASA Technical Reports Server (NTRS)

Banks, Bruce A. (Inventor)

1991-01-01

High emittance radiator surfaces are produced by arc-texturing. This process produces such a surface on a metal by scanning it with a low voltage electric arc from a carbon electrode in an inert environment.

Self aligning electron beam gun having enhanced thermal and mechanical stability

DOEpatents

Scarpetti, R.D. Jr.; Parkison, C.D.; Switzer, V.A.; Lee, Y.J.; Sawyer, W.C.

1995-05-16

A compact, high power electron gun is disclosed having enhanced thermal and mechanical stability which incorporates a mechanically coupled, self aligning structure for the anode and cathode. The enhanced stability, and reduced need for realignment of the cathode to the anode and downstream optics during operation are achieved by use of a common support structure for the cathode and anode which requires no adjustment screws or spacers. The electron gun of the present invention also incorporates a modular design for the cathode, in which the electron emitter, its support structure, and the hardware required to attach the emitter assembly to the rest of the gun are a single element. This modular design makes replacement of the emitter simpler and requires no realignment after a new emitter has been installed. Compactness and a reduction in the possibility of high voltage breakdown are achieved by shielding the ``triple point`` where the electrode, insulator, and vacuum meet. The use of electric discharge machining (EDM) for fabricating the emitter allows for the accurate machining of the emitter into intricate shapes without encountering the normal stresses developed by standard emitter fabrication techniques. 12 Figs.

Quantum memory and gates using a Λ -type quantum emitter coupled to a chiral waveguide

NASA Astrophysics Data System (ADS)

Li, Tao; Miranowicz, Adam; Hu, Xuedong; Xia, Keyu; Nori, Franco

2018-06-01

By coupling a Λ -type quantum emitter to a chiral waveguide, in which the polarization of a photon is locked to its propagation direction, we propose a controllable photon-emitter interface for quantum networks. We show that this chiral system enables the swap gate and a hybrid-entangling gate between the emitter and a flying single photon. It also allows deterministic storage and retrieval of single-photon states with high fidelities and efficiencies. In short, this chirally coupled emitter-photon interface can be a critical building block toward a large-scale quantum network.

Development of chemically vapor deposited rhenium emitters of (0001) preferred crystal orientation

NASA Technical Reports Server (NTRS)

Yang, L.; Hudson, R. G.

1973-01-01

Rhenium thermionic emitters were prepared by the pyrolysis of rhenium chlorides formed by the chlorination of rhenium pellets. The impurity contents, microstructures, degrees of (0001) preferred crystal orientation, and vacuum electron work functions of these emitters were determined as a function of deposition parameters, such as substrate temperature, rhenium pellet temperature and chlorine flow rate. A correlation between vacuum electron work function and degree of (0001) preferred crystal orientation was established. Conditions for depositing porosity-free rhenium emitters of high vacuum electron work functions were defined. Finally, three cylindrical rhenium emitters were prepared under the optimum deposition conditions.

Current status of the Taiwan Photon Source project

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chang, Shih-Lin

2014-03-05

The progress of establishment of a high brightness and low emittance mid-energy storage ring is reported. The status of the 3 GeV Taiwan Photon Source (TPS) currently under construction will be presented. The progress on the civil construction, manufacturing of machine components, as well as the opportunity of using low emittace synchrotron source and phase I beamlines at TPS will be mentioned. The future planning of phase II beamlines and related research will be sketched. Future developments will be also briefly outlined.

Stability of an emittance-dominated sheet-electron beam in planar wiggler and periodic permanent magnet structures with natural focusing

NASA Astrophysics Data System (ADS)

Carlsten, B. E.; Earley, L. M.; Krawczyk, F. L.; Russell, S. J.; Potter, J. M.; Ferguson, P.; Humphries, S.

2005-06-01

A sheet-beam traveling-wave amplifier has been proposed as a high-power generator of rf from 95 to 300 GHz, using a microfabricated rf slow-wave structure [Carlsten et al., IEEE Trans. Plasma Sci. 33, 85 (2005), ITPSBD, 0093-3813, 10.1109/TPS.2004.841172], for emerging radar and communications applications. The planar geometry of microfabrication technologies matches well with the nearly planar geometry of a sheet beam, and the greater allowable beam current leads to high-peak power, high-average power, and wide bandwidths. Simulations of nominal designs using a vane-loaded waveguide as the slow-wave structure have indicated gains in excess of 1 dB/mm, with extraction efficiencies greater than 20% at 95 GHz with a 120-kV, 20-A electron beam. We have identified stable sheet-beam formation and transport as the key enabling technology for this type of device. In this paper, we describe sheet-beam transport, for both wiggler and periodic permanent magnet (PPM) magnetic field configurations, with natural (or single-plane) focusing. For emittance-dominated transport, the transverse equation of motion reduces to a Mathieu equation, and to a modified Mathieu equation for a space-charge dominated beam. The space-charge dominated beam has less beam envelope ripple than an emittance-dominated beam, but they have similar stability thresholds (defined by where the beam ripple continues to grow without bound along the transport line), consistent with the threshold predicted by the Mathieu equation. Design limits are derived for an emittance-dominated beam based on the Mathieu stability threshold. The increased beam envelope ripple for emittance-dominated transport may impact these design limits, for some transport requirements. The stability of transport in a wiggler field is additionally compromised by the beam’s increased transverse motion. Stable sheet-beam transport with natural focusing is shown to be achievable for a 120-kV, 20-A, elliptical beam with a cross section of 1 cm by 0.5 mm, with both a PPM and a wiggler field, with magnetic field amplitude of about 2.5 kG.

Emission measurement of diesel vehicles in Hong Kong through on-road remote sensing: Performance review and identification of high-emitters.

PubMed

Huang, Yuhan; Organ, Bruce; Zhou, John L; Surawski, Nic C; Hong, Guang; Chan, Edward F C; Yam, Yat Shing

2018-06-01

A two-year remote sensing measurement program was carried out in Hong Kong to obtain a large dataset of on-road diesel vehicle emissions. Analysis was performed to evaluate the effect of vehicle manufacture year (1949-2015) and engine size (0.4-20 L) on the emission rates and high-emitters. The results showed that CO emission rates of larger engine size vehicles were higher than those of small vehicles during the study period, while HC and NO were higher before manufacture year 2006 and then became similar levels between manufacture years 2006 and 2015. CO, HC and NO of all vehicles showed an unexpectedly increasing trend during 1998-2004, in particular ≥6001 cc vehicles. However, they all decreased steadily in the last decade (2005-2015), except for NO of ≥6001 cc vehicles during 2013-2015. The distributions of CO and HC emission rates were highly skewed as the dirtiest 10% vehicles emitted much higher emissions than all the other vehicles. Moreover, this skewness became more significant for larger engine size or newer vehicles. The results indicated that remote sensing technology would be very effective to screen the CO and HC high-emitters and thus control the on-road vehicle emissions, but less effective for controlling NO emissions. No clear correlation was observed between the manufacture year and percentage of high-emitters for ≤3000 cc vehicles. However, the percentage of high-emitters decreased with newer manufacture year for larger vehicles. In addition, high-emitters of different pollutants were relatively independent, in particular NO emissions, indicating that high-emitter screening criteria should be defined on a CO-or-HC-or-NO basis, rather than a CO-and-HC-and-NO basis. Copyright © 2018 Elsevier Ltd. All rights reserved.

Diamondoid monolayers as electron emitters

DOEpatents

Yang, Wanli [El Cerrito, CA; Fabbri, Jason D [San Francisco, CA; Melosh, Nicholas A [Menlo Park, CA; Hussain, Zahid [Orinda, CA; Shen, Zhi-Xun [Stanford, CA

2012-04-10

Provided are electron emitters based upon diamondoid monolayers, preferably self-assembled higher diamondoid monolayers. High intensity electron emission has been demonstrated employing such diamondoid monolayers, particularly when the monolayers are comprised of higher diamondoids. The application of such diamondoid monolayers can alter the band structure of substrates, as well as emit monochromatic electrons, and the high intensity electron emissions can also greatly improve the efficiency of field-effect electron emitters as applied to industrial and commercial applications.

Diamondoid monolayers as electron emitters

DOEpatents

Yang, Wanli; Fabbri, Jason D.; Melosh, Nicholas A.; Hussain, Zahid; Shen, Zhi-Xun

2013-10-29

Provided are electron emitters based upon diamondoid monolayers, preferably self-assembled higher diamondoid monolayers. High intensity electron emission has been demonstrated employing such diamondoid monolayers, particularly when the monolayers are comprised of higher diamondoids. The application of such diamondoid monolayers can alter the band structure of substrates, as well as emit monochromatic electrons, and the high intensity electron emissions can also greatly improve the efficiency of field-effect electron emitters as applied to industrial and commercial applications.

PEP as a synchrotron radiation source (invited)

NASA Astrophysics Data System (ADS)

Bienenstock, A.; Brown, G.; Wiedemann, H.; Winick, H.

1989-07-01

The 16-GeV storage ring PEP has characteristics which enable it to operate in modes with very low emittance and to accommodate very long undulators, producing synchrotron radiation at x-ray wavelengths with extremely high brightness and coherent power. Two beamlines, each illuminated by a 2-m long, 77-mm period undulator magnet, are now operational and others are planned. In parasitic operation during colliding-beam runs at 14.5 GeV, these beamlines provide photons above 10 keV with a peak brightness of about 1016 photons/(s mm2 mrad2 ) within a 0.1% bandwidth. In low-emittance tests at 7.1 GeV, horizontal emittances of about 5 nm rad were measured, which is about the same as that planned for the new third-generation x-ray sources. With a current of 15 mA at 7.1 GeV, the present undulators deliver photon beams from 2.7 to 14 keV with a peak brightness of about 1017 . Higher performance levels are expected with the implementation of longer undulators and shorter period undulators. In the longer term, because of its large circumference and long straight sections, PEP could be further developed to achieve even higher performance levels with an emittance below 1 nm rad, very long undulators and picosecond bunches, resulting in one to two orders of magnitude higher brightness and coherent power.

Liquid metal ion source and alloy for ion emission of multiple ionic species

DOEpatents

Clark, Jr., William M.; Utlaut, Mark W.; Wysocki, Joseph A.; Storms, Edmund K.; Szklarz, Eugene G.; Behrens, Robert G.; Swanson, Lynwood W.; Bell, Anthony E.

1987-06-02

A liquid metal ion source and alloy for the simultaneous ion evaporation of arsenic and boron, arsenic and phosphorus, or arsenic, boron and phosphorus. The ionic species to be evaporated are contained in palladium-arsenic-boron and palladium-arsenic-boron-phosphorus alloys. The ion source, including an emitter means such as a needle emitter and a source means such as U-shaped heater element, is preferably constructed of rhenium and tungsten, both of which are readily fabricated. The ion sources emit continuous beams of ions having sufficiently high currents of the desired species to be useful in ion implantation of semiconductor wafers for preparing integrated circuit devices. The sources are stable in operation, experience little corrosion during operation, and have long operating lifetimes.

Diamond field emitter array cathodes and possibilities for employing additive manufacturing for dielectric laser accelerating structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Simakov, Evgenya Ivanovna; Andrews, Heather Lynn; Herman, Matthew Joseph

2016-09-20

These are slides for a presentation at Stanford University. The outline is as follows: Motivation: customers for compact accelerators, LANL's technologies for laser acceleration, DFEA cathodes, and additive manufacturing of micron-size structures. Among the stated conclusions are the following: preliminary study identified DFEA cathodes as promising sources for DLAs--high beam current and small emittance; additive manufacturing with Nanoscribe Professional GT can produce structures with the right scale features for a DLA operating at micron wavelengths (fabrication tolerances need to be studied, DLAs require new materials). Future plans include DLA experiment with a beam produced by the DFEA cathode with fieldmore » emission, demonstration of photoemission from DFEAs, and new structures to print and test.« less

Design, conditioning, and performance of a high voltage, high brightness dc photoelectron gun with variable gap

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maxson, Jared; Bazarov, Ivan; Dunham, Bruce

2014-09-15

A new high voltage photoemission gun has been constructed at Cornell University which features a segmented insulator and a movable anode, allowing the cathode-anode gap to be adjusted. In this work, we describe the gun's overall mechanical and high voltage design, the surface preparation of components, as well as the clean construction methods. We present high voltage conditioning data using a 50 mm cathode-anode gap, in which the conditioning voltage exceeds 500 kV, as well as at smaller gaps. Finally, we present simulated emittance results obtained from a genetic optimization scheme using voltage values based on the conditioning data. Thesemore » results indicate that for charges up to 100 pC, a 30 mm gap at 400 kV has equal or smaller 100% emittance than a 50 mm gap at 450 kV, and also a smaller core emittance, when placed as the source for the Cornell energy recovery linac photoinjector with bunch length constrained to be <3 ps rms. For 100 pC up to 0.5 nC charges, the 50 mm gap has larger core emittance than the 30 mm gap, but conversely smaller 100% emittance.« less

A 60 mA DC H- multi cusp ion source developed at TRIUMF

NASA Astrophysics Data System (ADS)

Jayamanna, K.; Ames, F.; Bylinskii, I.; Lovera, M.; Minato, B.

2018-07-01

This paper describes the latest high-current multi cusp type ion source developed at TRIUMF, which is capable of producing a negative hydrogen ion beam (H-) of 60 mA of direct current at 140V and 90A arc. The results achieved to date including emittance measurements and filament lifetime issues are presented. The low current version of this ion source is suitable for medical cyclotrons as well as accelerators and the high current version is intended for producing large neutral hydrogen beams for fusion research. The description of the source magnetic configuration, the electron filter profile and the differential pumping techniques given in the paper will allow the building of an arc discharge H- ion source with similar properties.

Status of thermoelectronic laser energy conversion, TELEC

NASA Technical Reports Server (NTRS)

Britt, E. J.

1982-01-01

A concept known as a thermo-electronic laser energy converter (TELEC), was studied as a method of converting a 10.6 micron CO2 laser beam into electric power. The calculated characteristics of a TELEC seem to be well matched to the requirements of a spacecraft laser energy conversion system. The TELEC is a high power density plasma device which absorbs an intense laser beam by inverse bremsstrahlung with the plasma electrons. In the TELEC process, electromagnetic radiation is absorbed directly in the plasma electrons producing a high electron temperature. The energetic electrons diffuse out of the plasma striking two electrodes which are in contact with the plasma at the boundaries. These two electrodes have different areas: the larger one is designated as the collector, the smaller one is designated as the emitter. The smaller electrode functions as an electron emitter provide continuity of the current. Waste heat is rejected from the collector electrode. An experiment was carried out with a high power laser using a cesium vapor TELEC cell with 30 cm active length. Laser supported plasma were produced in the TELEC device during a number of laser runs over a period of several days. Electric power from the TELEC was observed with currents in the range of several amperes and output potentials of less than 1 volt.

Simulation of electron beam formation and transport in a gas-filled electron-optical system with a plasma emitter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grishkov, A. A.; Kornilov, S. Yu., E-mail: kornilovsy@gmail.com; Rempe, N. G.

2016-07-15

The results of computer simulations of the electron-optical system of an electron gun with a plasma emitter are presented. The simulations are performed using the KOBRA3-INP, XOOPIC, and ANSYS codes. The results describe the electron beam formation and transport. The electron trajectories are analyzed. The mechanisms of gas influence on the energy inhomogeneity of the beam and its current in the regions of beam primary formation, acceleration, and transport are described. Recommendations for optimizing the electron-optical system with a plasma emitter are presented.

Modulation characteristics of graphene-based thermal emitters

NASA Astrophysics Data System (ADS)

Mahlmeister, Nathan Howard; Lawton, Lorreta Maria; Luxmoore, Isaac John; Nash, Geoffrey Richard

2016-01-01

We have investigated the modulation characteristics of the emission from a graphene-based thermal emitter both experimentally and through simulations using finite element method modelling. Measurements were performed on devices containing square multilayer graphene emitting areas, with the devices driven by a pulsed DC drive current over a range of frequencies. Simulations show that the dominant heat path is from the emitter to the underlying substrate, and that the thermal resistance between the graphene and the substrate determines the modulation characteristics. This is confirmed by measurements made on devices in which the emitting area is encapsulated by hexagonal boron nitride.

Single Crystal Diamond Needle as Point Electron Source.

PubMed

Kleshch, Victor I; Purcell, Stephen T; Obraztsov, Alexander N

2016-10-12

Diamond has been considered to be one of the most attractive materials for cold-cathode applications during past two decades. However, its real application is hampered by the necessity to provide appropriate amount and transport of electrons to emitter surface which is usually achieved by using nanometer size or highly defective crystallites having much lower physical characteristics than the ideal diamond. Here, for the first time the use of single crystal diamond emitter with high aspect ratio as a point electron source is reported. Single crystal diamond needles were obtained by selective oxidation of polycrystalline diamond films produced by plasma enhanced chemical vapor deposition. Field emission currents and total electron energy distributions were measured for individual diamond needles as functions of extraction voltage and temperature. The needles demonstrate current saturation phenomenon and sensitivity of emission to temperature. The analysis of the voltage drops measured via electron energy analyzer shows that the conduction is provided by the surface of the diamond needles and is governed by Poole-Frenkel transport mechanism with characteristic trap energy of 0.2-0.3 eV. The temperature-sensitive FE characteristics of the diamond needles are of great interest for production of the point electron beam sources and sensors for vacuum electronics.

Single Crystal Diamond Needle as Point Electron Source

NASA Astrophysics Data System (ADS)

Kleshch, Victor I.; Purcell, Stephen T.; Obraztsov, Alexander N.

2016-10-01

Diamond has been considered to be one of the most attractive materials for cold-cathode applications during past two decades. However, its real application is hampered by the necessity to provide appropriate amount and transport of electrons to emitter surface which is usually achieved by using nanometer size or highly defective crystallites having much lower physical characteristics than the ideal diamond. Here, for the first time the use of single crystal diamond emitter with high aspect ratio as a point electron source is reported. Single crystal diamond needles were obtained by selective oxidation of polycrystalline diamond films produced by plasma enhanced chemical vapor deposition. Field emission currents and total electron energy distributions were measured for individual diamond needles as functions of extraction voltage and temperature. The needles demonstrate current saturation phenomenon and sensitivity of emission to temperature. The analysis of the voltage drops measured via electron energy analyzer shows that the conduction is provided by the surface of the diamond needles and is governed by Poole-Frenkel transport mechanism with characteristic trap energy of 0.2-0.3 eV. The temperature-sensitive FE characteristics of the diamond needles are of great interest for production of the point electron beam sources and sensors for vacuum electronics.

All-optical control and super-resolution imaging of quantum emitters in layered materials.

PubMed

Kianinia, Mehran; Bradac, Carlo; Sontheimer, Bernd; Wang, Fan; Tran, Toan Trong; Nguyen, Minh; Kim, Sejeong; Xu, Zai-Quan; Jin, Dayong; Schell, Andreas W; Lobo, Charlene J; Aharonovich, Igor; Toth, Milos

2018-02-28

Layered van der Waals materials are emerging as compelling two-dimensional platforms for nanophotonics, polaritonics, valleytronics and spintronics, and have the potential to transform applications in sensing, imaging and quantum information processing. Among these, hexagonal boron nitride (hBN) is known to host ultra-bright, room-temperature quantum emitters, whose nature is yet to be fully understood. Here we present a set of measurements that give unique insight into the photophysical properties and level structure of hBN quantum emitters. Specifically, we report the existence of a class of hBN quantum emitters with a fast-decaying intermediate and a long-lived metastable state accessible from the first excited electronic state. Furthermore, by means of a two-laser repumping scheme, we show an enhanced photoluminescence and emission intensity, which can be utilized to realize a new modality of far-field super-resolution imaging. Our findings expand current understanding of quantum emitters in hBN and show new potential ways of harnessing their nonlinear optical properties in sub-diffraction nanoscopy.

Dark current, breakdown, and magnetic field effects in a multicell, 805MHz cavity

NASA Astrophysics Data System (ADS)

Norem, J.; Wu, V.; Moretti, A.; Popovic, M.; Qian, Z.; Ducas, L.; Torun, Y.; Solomey, N.

2003-07-01

We present measurements of dark currents and x rays in a six cell 805MHz cavity, taken as part of an rf development program for muon cooling, which requires high power, high stored energy, low frequency cavities operating in a strong magnetic field. We have done the first systematic study of the behavior of high power rf in a strong (2.5 4T) magnetic field. Our measurements extend over a very large dynamic range in current and provide good fits to the Fowler-Nordheim field emission model assuming mechanical structures produce field enhancements at the surface. The locally enhanced field intensities we derive at the tips of these emitters are very large, (˜10 GV/m), and should produce tensile stresses comparable to the tensile strength of the copper cavity walls and should be capable of causing breakdown events. We also compare our data with estimates of tensile stresses from a variety of accelerating structures. Preliminary studies of the internal surface of the cavity and window are presented, which show splashes of copper with many sharp cone shaped protrusions and wires which can explain the experimentally measured field enhancements. We discuss a “cold copper” breakdown mechanism and briefly review alternatives. We also discuss a number of effects due to the 2.5T solenoidal fields on the cavity such as altered field emission due to mechanical deformation of emitters, and dark current ring beams, which are produced from the irises by E×B drifts during the nonrelativistic part of the acceleration process.

Effect of quantum well position on the distortion characteristics of transistor laser

NASA Astrophysics Data System (ADS)

Piramasubramanian, S.; Ganesh Madhan, M.; Radha, V.; Shajithaparveen, S. M. S.; Nivetha, G.

2018-05-01

The effect of quantum well position on the modulation and distortion characteristics of a 1300 nm transistor laser is analyzed in this paper. Standard three level rate equations are numerically solved to study this characteristics. Modulation depth, second order harmonic and third order intermodulation distortion of the transistor laser are evaluated for different quantum well positions for a 900 MHz RF signal modulation. From the DC analysis, it is observed that optical power is maximum, when the quantum well is positioned near base-emitter interface. The threshold current of the device is found to increase with increasing the distance between the quantum well and the base-emitter junction. A maximum modulation depth of 0.81 is predicted, when the quantum well is placed at 10 nm from the base-emitter junction, under RF modulation. The magnitude of harmonic and intermodulation distortion are found to decrease with increasing current and with an increase in quantum well distance from the emitter base junction. A minimum second harmonic distortion magnitude of -25.96 dBc is predicted for quantum well position (230 nm) near to the base-collector interface for 900 MHz modulation frequency at a bias current of 20 Ibth. Similarly, a minimum third order intermodulation distortion of -38.2 dBc is obtained for the same position and similar biasing conditions.

Emission of isoprene from common Indian plant species and its implications for regional air quality.

PubMed

Singh, Rashmi; Singh, Abhai Pratap; Singh, M P; Kumar, Animesh; Varshney, C K

2008-09-01

Isoprene is most dominant volatile organic compounds (VOC) emitted by many plants. In this study 40 common Indian plant species were examined for isoprene emission using dynamic flow through enclosure chamber technique. Isoprene emission rates of plants species were found to vary from undetectable to 69.5 microg g(-1) h(-1) (Madhuca latifolia). Besides, an attempt has been made to evaluate suitability of 80 common Indian plant species for planting programmes. Out of 80 species, 29 species were moderate to high emitters (10 to < or =25 microg g(-1) h(-1)), 12 species were low emitter emitters (1 to < or =10 microg g(-1) h(-1)) and remaining 39 species were found to be negligible or non emitters (<1 microg g(-1) h(-1)) of isoprene. About 50% plant species selected for planting programmes in India were found to be moderate to high emitters of isoprene.

Harvesting Triplet Excitons with Exciplex Thermally Activated Delayed Fluorescence Emitters toward High Performance Heterostructured Organic Light-Emitting Field Effect Transistors.

PubMed

Song, Li; Hu, Yongsheng; Liu, Zheqin; Lv, Ying; Guo, Xiaoyang; Liu, Xingyuan

2017-01-25

The utilization of triplet excitons plays a key role in obtaining high emission efficiency for organic electroluminescent devices. However, to date, only phosphorescent materials have been implemented to harvest the triplet excitons in the organic light-emitting field effect transistors (OLEFETs). In this work, we report the first incorporation of exciplex thermally activated delayed fluorescence (TADF) emitters in heterostructured OLEFETs to harvest the triplet excitons. By developing a new kind of exciplex TADF emitter constituted by m-MTDATA (4,4',4″-tris(N-3-methylphenyl-N-phenylamino)triphenylamine) as the donor and OXD-7 (1,3-bis[2-(4-tert-butylphenyl)-1,3,4-oxadiazo-5-yl]benzene) as the acceptor, an exciton utilization efficiency of 74.3% for the devices was achieved. It is found that the injection barrier between hole transport layer and emission layer as well as the ratio between donor and acceptor would influence the external quantum efficiency (EQE) significantly. Devices with a maximum EQE of 3.76% which is far exceeding the reported results for devices with conventional fluorescent emitters were successfully demonstrated. Moreover, the EQE at high brightness even outperformed the result for organic light-emitting diode based on the same emitter. Our results demonstrate that the exciplex TADF emitters can be promising candidates to develop OLEFETs with high performance.

A digital miniature x-ray tube with a high-density triode carbon nanotube field emitter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jeong, Jin-Woo; Kang, Jun-Tae; Choi, Sungyoul

2013-01-14

We have fabricated a digital miniature x-ray tube (6 mm in diameter and 32 mm in length) with a high-density triode carbon nanotube (CNT) field emitter for special x-ray applications. The triode CNT emitter was densely formed within a diameter of below 4 mm with the focusing-functional gate. The brazing process enables us to obtain and maintain a desired vacuum level for the reliable electron emission from the CNT emitters after the vacuum packaging. The miniature x-ray tube exhibited a stable and reliable operation over 250 h in a pulse mode at an anode voltage of above 25 kV.

A large-scale structure traced by [O II] emitters hosting a distant cluster at z= 1.62

NASA Astrophysics Data System (ADS)

Tadaki, Ken-ichi; Kodama, Tadayuki; Ota, Kazuaki; Hayashi, Masao; Koyama, Yusei; Papovich, Casey; Brodwin, Mark; Tanaka, Masayuki; Iye, Masanori

2012-07-01

We present a panoramic narrow-band imaging survey of [O II] emitters in and around the ClG J0218.3-0510 cluster at z= 1.62 with Suprime-Cam on Subaru Telescope. 352 [O II] emitters were identified on the basis of narrow-band excesses and photometric redshifts. We discovered a huge filamentary structure with some clumps traced by [O II] emitters and found that the ClG J0218.3-0510 cluster is embedded in an even larger superstructure than the one reported previously. 31 [O II] emitters were spectroscopically confirmed with the detection of Hα and/or [O III] emission lines by Fibre Multi Object Spectrograph observations. In the high-density regions such as cluster core and clumps, star-forming [O II] emitters show a high overdensity by a factor of more than 10 compared to the field region. Interestingly, the relative fraction of [O II] emitters in photo-z selected sample does not depend significantly on the local density. Although the star formation activity is very high even in the cluster core, some massive quiescent galaxies also exist at the same time. Furthermore, the properties of the individual [O II] emitters, such as star formation rates (SFRs), stellar masses and specific SFRs, do not show a significant dependence on the local density, either. Such a lack of environmental dependence is consistent with our earlier result by Hayashi et al. on a z= 1.5 cluster and its surrounding region. The fact that the star-forming activity of galaxies in the cluster core is as high as that in the field at z˜ 1.6 may suggest that the star-forming galaxies are probably just in a transition phase from a starburst mode to a quiescent mode, and are thus showing comparable level of star formation rates to those in lower density environments. We may be witnessing the start of the reversal of the local SFR-density relation due to the 'biased' galaxy formation and evolution in high-density regions at this high redshift, beyond which massive galaxies would be forming vigorously in a more biased way in protocluster cores.

Performance evaluation of PEP

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zisman, M.S.

An investigation of collective effects has been undertaken to assess the possibilities for using the low emittance operating mode of the PEP storage ring as a dedicated source of synchrotron radiation. Beam current limitations associated with longitudinal and transverse instabilities, and the expected emittance growth due to intrabeam scattering have been studied as a function of beam energy. Calculations of the beam lifetime due to Touschek and gas scattering are presented, and the growth times of coupled-bunch instabilities are estimated. In general, the results are encouraging, and no fundamental problems have been uncovered. It appears that beam currents up tomore » about 10 mA per bunch should be achievable, and that the emittance growth is not a severe problem at an energy of about 8 GeV. A feedback system to deal with coupled-bunch instabilities is likely to be required. 7 refs., 13 figs.« less

Emitter/absorber interface of CdTe solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Tao; Kanevce, Ana; Sites, James R.

The performance of CdTe solar cells can be very sensitive to their emitter/absorber interfaces, especially for high-efficiency cells with improved bulk properties. When interface defect states are located at efficient recombination energies, performance losses from acceptor-type interface defects can be significant. Numerical simulations show that the emitter/absorber band alignment, the emitter doping and thickness, and the defect properties of the interface (i.e. defect density, defect type, and defect energy) can all play significant roles in the interface recombination. In particular, a type I heterojunction with small conduction-band offset (0.1 eV /= 0.4 eV), however, can impede electron transport and leadmore » to a reduction of photocurrent and fill-factor. In contrast to the spike, a 'cliff' (.delta..EC < 0 eV) is likely to allow many holes in the vicinity of the interface, which will assist interface recombination and result in a reduced open-circuit voltage. In addition, a thin and highly-doped emitter can invert the absorber, form a large hole barrier, and decrease device performance losses due to high interface defect density. CdS is the most common emitter material used in CdTe solar cells, but the CdS/CdTe interface is in the cliff category and is not favorable from the band-offset perspective. Other n-type emitter choices, such as (Mg,Zn)O, Cd(S,O), or (Cd,Mg)Te, can be tuned by varying the elemental ratio for an optimal positive value of ..delta..EC. These materials are predicted to yield higher voltages and would therefore be better candidates for the CdTe-cell emitter.« less

VO2-based radiative thermal transistor with a semi-transparent base

NASA Astrophysics Data System (ADS)

Prod'homme, Hugo; Ordonez-Miranda, Jose; Ezzahri, Younès; Drévillon, Jérémie; Joulain, Karl

2018-05-01

We study a radiative thermal transistor analogous to an electronic one made of a VO2 base placed between two silica semi-infinite plates playing the roles of the transistor collector and emitter. The fact that VO2 exhibits an insulator to metal transition is exploited to modulate and/or amplify heat fluxes between the emitter and the collector, by applying a thermal current on the VO2 base. We extend the work of precedent studies considering the case where the base can be semi-transparent so that heat can be exchanged directly between the collector and the emitter. Both near and far field cases are considered leading to 4 typical regimes resulting from the fact that the emitter-base and base-collector separation distances can be larger or smaller than the thermal wavelength for a VO2 layer opaque or semi-transparent. Thermal currents variations with the base temperatures are calculated and analyzed. It is found that the transistor can operate in an amplification mode as already stated in [1] or in a switching mode as seen in [2]. An optimum configuration for the base thickness and separation distance maximizing the thermal transistor modulation factor is found.

Decoupling Intensity Radiated by the Emitter in Distance Estimation from Camera to IR Emitter

PubMed Central

Cano-García, Angel E.; Galilea, José Luis Lázaro; Fernández, Pedro; Infante, Arturo Luis; Pompa-Chacón, Yamilet; Vázquez, Carlos Andrés Luna

2013-01-01

Various models using radiometric approach have been proposed to solve the problem of estimating the distance between a camera and an infrared emitter diode (IRED). They depend directly on the radiant intensity of the emitter, set by the IRED bias current. As is known, this current presents a drift with temperature, which will be transferred to the distance estimation method. This paper proposes an alternative approach to remove temperature drift in the distance estimation method by eliminating the dependence on radiant intensity. The main aim was to use the relative accumulated energy together with other defined models, such as the zeroth-frequency component of the FFT of the IRED image and the standard deviation of pixel gray level intensities in the region of interest containing the IRED image. By using the abovementioned models, an expression free of IRED radiant intensity was obtained. Furthermore, the final model permitted simultaneous estimation of the distance between the IRED and the camera and the IRED orientation angle. The alternative presented in this paper gave a 3% maximum relative error over a range of distances up to 3 m. PMID:23727954

A highly efficient CMOS nanoplasmonic crystal enhanced slow-wave thermal emitter improves infrared gas-sensing devices

PubMed Central

Pusch, Andreas; De Luca, Andrea; Oh, Sang S.; Wuestner, Sebastian; Roschuk, Tyler; Chen, Yiguo; Boual, Sophie; Ali, Zeeshan; Phillips, Chris C.; Hong, Minghui; Maier, Stefan A.; Udrea, Florin; Hopper, Richard H.; Hess, Ortwin

2015-01-01

The application of plasmonics to thermal emitters is generally assisted by absorptive losses in the metal because Kirchhoff’s law prescribes that only good absorbers make good thermal emitters. Based on a designed plasmonic crystal and exploiting a slow-wave lattice resonance and spontaneous thermal plasmon emission, we engineer a tungsten-based thermal emitter, fabricated in an industrial CMOS process, and demonstrate its markedly improved practical use in a prototype non-dispersive infrared (NDIR) gas-sensing device. We show that the emission intensity of the thermal emitter at the CO2 absorption wavelength is enhanced almost 4-fold compared to a standard non-plasmonic emitter, which enables a proportionate increase in the signal-to-noise ratio of the CO2 gas sensor. PMID:26639902

RF emittance in a low energy electron linear accelerator

NASA Astrophysics Data System (ADS)

Sanaye Hajari, Sh.; Haghtalab, S.; Shaker, H.; Kelisani, M. Dayyani

2018-04-01

Transverse beam dynamics of an 8 MeV low current (10 mA) S-band traveling wave electron linear accelerator has been studied and optimized. The main issue is to limit the beam emittance, mainly induced by the transverse RF forces. The linac is being constructed at Institute for Research in Fundamental Science (IPM), Tehran Iran Labeled as Iran's First Linac, nearly all components of this accelerator are designed and constructed within the country. This paper discusses the RF coupler induced field asymmetry and the corresponding emittance at different focusing levels, introduces a detailed beam dynamics design of a solenoid focusing channel aiming to reduce the emittance growth and studies the solenoid misalignment tolerances. In addition it has been demonstrated that a prebuncher cavity with appropriate parameters can help improving the beam quality in the transverse plane.

Characterization of Hollow Cathode Performance and Thermal Behavior

NASA Technical Reports Server (NTRS)

Polk, James E.; Goebel, Dan M.; Watkins, Ron; Jameson, Kristina; Yoneshige, Lance; Przybylowski, JoHanna; Cho, Lauren

2006-01-01

Hollow cathodes are one of the main life-limiting components in ion engines and Hall thrusters. Although state-of-the-art hollow cathodes have demonstrated up to 30,352 hours of operation in ground tests with careful handling, future missions are likely to require longer life, more margin and greater resistance to reactive contaminant gases. Three alternate hollow cathode technologies that exploit different emitter materials or geometries to address some of the limitations of state-of-the-art cathodes are being investigated. Performance measurements of impregnated tungsten-iridium dispenser cathodes at discharge currents of 4 to 15 A demonstrated that they have the same operating range and ion production efficiency as conventional tungsten dispenser cathodes. Temperature measurements indicated that tungsten-iridium cathodes also operate at the same emitter temperatures. They did not exhibit the expected reduction in work function at the current densities tested. Hollow cathodes with lanthanum hexaboride emitters operated over a wide current range, but suffered from lower ion production efficiency at currents below about 12.4 A because of higher insert heating requirements. Differences in operating voltages and ion production rates are explained with a simple model of the effect of cathode parameters on discharge behavior.

Generating a high brightness multi-kilowatt laser by dense spectral combination of VBG stabilized single emitter laser diodes

NASA Astrophysics Data System (ADS)

Fritsche, H.; Koch, Ralf; Krusche, B.; Ferrario, F.; Grohe, Andreas; Pflueger, S.; Gries, W.

2014-05-01

Generating high power laser radiation with diode lasers is commonly realized by geometrical stacking of diode bars, which results in high output power but poor beam parameter product (BPP). The accessible brightness in this approach is limited by the fill factor, both in slow and fast axis. By using a geometry that accesses the BPP of the individual diodes, generating a multi kilowatt diode laser with a BPP comparable to fiber lasers is possible. We will demonstrate such a modular approach for generating multi kilowatt lasers by combining single emitter diode lasers. Single emitter diodes have advantages over bars, mainly a simplified cooling, better reliability and a higher brightness per emitter. Additionally, because single emitters can be arranged in many different geometries, they allow building laser modules where the brightness of the single emitters is preserved. In order to maintain the high brightness of the single emitter we developed a modular laser design which uses single emitters in a staircase arrangement, then coupling two of those bases with polarization combination which is our basic module. Those modules generate up to 160 W with a BPP better than 7.5 mm*mrad. For further power scaling wavelength stabilization is crucial. The wavelength is stabilized with only one Volume Bragg Grating (VBG) in front of a base providing the very same feedback to all of the laser diodes. This results in a bandwidth of < 0.5 nm and a wavelength stability of better than 250 MHz over one hour. Dense spectral combination with dichroic mirrors and narrow channel spacing allows us to combine multiple wavelength channels, resulting in a 2 kW laser module with a BPP better than 7.5 mm*mrad, which can easily coupled into a 100 μm fiber and 0.15 NA.

New Approaches to Final Cooling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Neuffer, David

2014-11-10

A high-energy muon collider scenario require a “final cooling” system that reduces transverse emittances by a factor of ~10 while allowing longitudinal emittance increase. The baseline approach has low-energy transverse cooling within high-field solenoids, with strong longitudinal heating. This approach and its recent simulation are discussed. Alternative approaches which more explicitly include emittance exchange are also presented. Round-to-flat beam transform, transverse slicing, and longitudinal bunch coalescence are possible components of the alternative approach. A more explicit understanding of solenoidal cooling beam dynamics is introduced.

Near-infrared roll-off-free electroluminescence from highly stable diketopyrrolopyrrole light emitting diodes

PubMed Central

Sassi, Mauro; Buccheri, Nunzio; Rooney, Myles; Botta, Chiara; Bruni, Francesco; Giovanella, Umberto; Brovelli, Sergio; Beverina, Luca

2016-01-01

Organic light emitting diodes (OLEDs) operating in the near-infrared spectral region are gaining growing relevance for emerging photonic technologies, such as lab-on-chip platforms for medical diagnostics, flexible self-medicated pads for photodynamic therapy, night vision and plastic-based telecommunications. The achievement of efficient near-infrared electroluminescence from solution-processed OLEDs is, however, an open challenge due to the low photoluminescence efficiency of most narrow-energy-gap organic emitters. Diketopyrrolopyrrole-boron complexes are promising candidates to overcome this limitation as they feature extremely high photoluminescence quantum yield in the near-infrared region and high chemical stability. Here, by incorporating suitably functionalized diketopyrrolopyrrole derivatives emitting at ~760 nm in an active matrix of poly(9,9-dioctylfluorene-alt-benzothiadiazole) and without using complex light out-coupling or encapsulation strategies, we obtain all-solution-processed NIR-OLEDs with external quantum efficiency as high as 0.5%. Importantly, our test-bed devices show no efficiency roll-off even for high current densities and high operational stability, retaining over 50% of the initial radiant emittance for over 50 hours of continuous operation at 10 mA/cm2, which emphasizes the great applicative potential of the proposed strategy. PMID:27677240

Historical review of lung counting efficiencies for low energy photon emitters

DOE PAGES

Jeffers, Karen L.; Hickman, David P.

2014-03-01

This publication reviews the measured efficiency and variability over time of a high purity planar germanium in vivo lung count system for multiple photon energies using increasingly thick overlays with the Lawrence Livermore Torso Phantom. Furthermore, the measured variations in efficiency are compared with the current requirement for in vivo bioassay performance as defined by the American National Standards Institute Standard.

Near atomically smooth alkali antimonide photocathode thin films

DOE PAGES

Feng, Jun; Karkare, Siddharth; Nasiatka, James; ...

2017-01-24

Nano-roughness is one of the major factors degrading the emittance of electron beams that can be generated by high efficiency photocathodes, such as the thermally reacted alkali antimonide thin films. In this paper, we demonstrate a co-deposition based method for producing alkali antimonide cathodes that produce near atomic smoothness with high reproducibility. Here, we calculate the effect of the surface roughness on the emittance and show that such smooth cathode surfaces are essential for operation of alkali antimonide cathodes in high field, low emittance radio frequency electron guns and to obtain ultracold electrons for ultrafast electron diffraction applications.

Near atomically smooth alkali antimonide photocathode thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, Jun; Karkare, Siddharth; Nasiatka, James

Nano-roughness is one of the major factors degrading the emittance of electron beams that can be generated by high efficiency photocathodes, such as the thermally reacted alkali antimonide thin films. In this paper, we demonstrate a co-deposition based method for producing alkali antimonide cathodes that produce near atomic smoothness with high reproducibility. Here, we calculate the effect of the surface roughness on the emittance and show that such smooth cathode surfaces are essential for operation of alkali antimonide cathodes in high field, low emittance radio frequency electron guns and to obtain ultracold electrons for ultrafast electron diffraction applications.

Rematching AGS Booster synchrotron injection lattice for smaller transverse beam emittances

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, C.; Beebe-Wang, J.; Brown, K.

2017-01-25

The polarized proton beam is injected into the booster via the charge-exchange (H- to H+) scheme. The emittance growth due to scattering at the stripping foil is proportional to the beta functions at the foil. It was demonstrated that the current scheme of reducing the beta functions at the stripping foil preserves the emittance better; however the betatron tunes are above but very close to half integer. Due to concern of space charge and half integer in general, options of lattice designs aimed towards reducing the beta functions at the stripping foil with tunes at more favorable places are explored.

Single photon emission from plasma treated 2D hexagonal boron nitride.

PubMed

Xu, Zai-Quan; Elbadawi, Christopher; Tran, Toan Trong; Kianinia, Mehran; Li, Xiuling; Liu, Daobin; Hoffman, Timothy B; Nguyen, Minh; Kim, Sejeong; Edgar, James H; Wu, Xiaojun; Song, Li; Ali, Sajid; Ford, Mike; Toth, Milos; Aharonovich, Igor

2018-05-03

Artificial atomic systems in solids are becoming increasingly important building blocks in quantum information processing and scalable quantum nanophotonic networks. Amongst numerous candidates, 2D hexagonal boron nitride has recently emerged as a promising platform hosting single photon emitters. Here, we report a number of robust plasma and thermal annealing methods for fabrication of emitters in tape-exfoliated hexagonal boron nitride (hBN) crystals. A two-step process comprising Ar plasma etching and subsequent annealing in Ar is highly robust, and yields an eight-fold increase in the concentration of emitters in hBN. The initial plasma-etching step generates emitters that suffer from blinking and bleaching, whereas the two-step process yields emitters that are photostable at room temperature with emission wavelengths greater than ∼700 nm. Density functional theory modeling suggests that the emitters might be associated with defect complexes that contain oxygen. This is further confirmed by generating the emitters via annealing hBN in air. Our findings advance the present understanding of the structure of quantum emitters in hBN and enhance the nanofabrication toolkit needed to realize integrated quantum nanophotonic circuits.

Note: A pulsed laser ion source for linear induction accelerators

NASA Astrophysics Data System (ADS)

Zhang, H.; Zhang, K.; Shen, Y.; Jiang, X.; Dong, P.; Liu, Y.; Wang, Y.; Chen, D.; Pan, H.; Wang, W.; Jiang, W.; Long, J.; Xia, L.; Shi, J.; Zhang, L.; Deng, J.

2015-01-01

We have developed a high-current laser ion source for induction accelerators. A copper target was irradiated by a frequency-quadrupled Nd:YAG laser (266 nm) with relatively low intensities of 108 W/cm2. The laser-produced plasma supplied a large number of Cu+ ions (˜1012 ions/pulse) during several microseconds. Emission spectra of the plasma were observed and the calculated electron temperature was about 1 eV. An induction voltage adder extracted high-current ion beams over 0.5 A/cm2 from a plasma-prefilled gap. The normalized beam emittance measured by a pepper-pot method was smaller than 1 π mm mrad.

Preliminary result of rapid solenoid for controlling heavy-ion beam parameters of laser ion source

DOE PAGES

Okamura, M.; Sekine, M.; Ikeda, S.; ...

2015-03-13

To realize a heavy ion inertial fusion driver, we have studied a possibility of laser ion source (LIS). A LIS can provide high current high brightness heavy ion beams, however it was difficult to manipulate the beam parameters. To overcome the issue, we employed a pulsed solenoid in the plasma drift section and investigated the effect of the solenoid field on singly charged iron beams. The rapid ramping magnetic field could enhance limited time slice of the current and simultaneously the beam emittance changed accordingly. This approach may also useful to realize an ion source for HIF power plant.

Innovative single-shot diagnostics for electrons from laser wakefield acceleration at FLAME

NASA Astrophysics Data System (ADS)

Bisesto, F. G.; Anania, M. P.; Cianchi, A.; Chiadroni, E.; Curcio, A.; Ferrario, M.; Pompili, R.; Zigler, A.

2017-07-01

Plasma wakefield acceleration is the most promising acceleration technique known nowadays, able to provide very high accelerating fields (> 100 GV/m), enabling acceleration of electrons to GeV energy in few centimeters. Here we present all the plasma related activities currently underway at SPARC_LAB exploiting the high power laser FLAME. In particular, we will give an overview of the single shot diagnostics employed: Electro Optic Sampling (EOS) for temporal measurement and Optical Transition Radiation (OTR) for an innovative one shot emittance measurements. In detail, the EOS technique has been employed to measure for the first time the longitudinal profile of electric field of fast electrons escaping from a solid target, driving the ions and protons acceleration, and to study the impact of using different target shapes. Moreover, a novel scheme for one shot emittance measurements based on OTR, developed and tested at SPARC_LAB LINAC, used in an experiment on electrons from laser wakefield acceleration still undergoing, will be shown.

Field emission from isolated individual vertically aligned carbon nanocones

NASA Astrophysics Data System (ADS)

Baylor, L. R.; Merkulov, V. I.; Ellis, E. D.; Guillorn, M. A.; Lowndes, D. H.; Melechko, A. V.; Simpson, M. L.; Whealton, J. H.

2002-04-01

Field emission from isolated individual vertically aligned carbon nanocones (VACNCs) has been measured using a small-diameter moveable probe. The probe was scanned parallel to the sample plane to locate the VACNCs, and perpendicular to the sample plane to measure the emission turn-on electric field of each VACNC. Individual VACNCs can be good field emitters. The emission threshold field depends on the geometric aspect ratio (height/tip radius) of the VACNC and is lowest when a sharp tip is present. VACNCs exposed to a reactive ion etch process demonstrate a lowered emission threshold field while maintaining a similar aspect ratio. Individual VACNCs can have low emission thresholds, carry high current densities, and have long emission lifetime. This makes them very promising for various field emission applications for which deterministic placement of the emitter with submicron accuracy is needed.

Composition, toxicity, and mutagenicity of particulate and semivolatile emissions from heavy-duty compressed natural gas-powered vehicles.

PubMed

Seagrave, JeanClare; Gigliotti, Andrew; McDonald, Jacob D; Seilkop, Steven K; Whitney, Kevin A; Zielinska, Barbara; Mauderly, Joe L

2005-09-01

Particulate matter (PM) and vapor-phase semivolatile organic compounds (SVOC) were collected from three buses fueled by compressed natural gas. The bus engines included a well-functioning, conventional engine; a "high emitter" engine; and a new technology engine with an oxidation catalyst. Chemical analysis of the emissions showed differences among these samples, with the high emitter sample containing markers of engine oil constituents. PM + SVOC samples were also collected for mutagenicity and toxicity testing. Extraction efficiencies from the collection media were lower than for similarly collected samples from gasoline or diesel vehicles. Responses to the recovered samples were compared on the basis of exhaust volume, to incorporate the emission rates into the potency factors. Mutagenicity was assessed by Salmonella reverse mutation assay. Mutagenicity was greatest for the high emitter sample and lowest for the new technology sample. Metabolic activation reduced mutagenicity in strain TA100, but not TA98. Toxicity, including inflammation, cytotoxicity, and parenchymal changes, was assessed 24 h after intratracheal instillation into rat lungs. Lung responses were generally mild, with little difference between the responses to equivalent volumes of emissions from the normal emitter and the new technology, but greater responses for the high emitter. These emission sample potencies are further compared on the basis of recovered mass with previously reported samples from normal and high-emitter gasoline and diesel vehicles. While mutagenic potencies for the CNG emission samples were similar to the range observed in the gasoline and diesel emission samples, lung toxicity potency factors were generally lower than those for the gasoline and diesel samples.

Characteristics of the fourth order resonance in high intensity linear accelerators

DOE PAGES

Jeon, D.; Hwang, Kyung Ryun

2017-06-19

For the 4σ = 360° space-charge resonance in high intensity linear accelerators, the emittance growth is surveyed for input Gaussian beams, as a function of the depressed phase advance per cell σ and the initial tune depression (σ o – σ). For each data point, the linac lattice is designed such that the fourth order resonance dominates over the envelope instability. Additionally, the data show that the maximum emittance growth takes place at σ ≈ 87° over a wide range of the tune depression (or beam current), which confirms that the relevant parameter for the emittance growth is σ andmore » that for the bandwidth is σ o – σ. An interesting four-fold phase space structure is observed that cannot be explained with the fourth order resonance terms alone. Analysis attributes this effect to a small negative sixth order detuning term as the beam is redistributed by the resonance. Analytical studies show that the tune increases monotonically for the Gaussian beam which prevents the resonance for σ > 90°. Lastly, frequency analysis indicates that the four-fold structure observed for input Kapchinskij-Vladmirskij beams when σ < 90°, is not the fourth order resonance but a fourth order envelope instability because the 1/4 = 90°/360° component is missing in the frequency spectrum.« less

Characteristics of the fourth order resonance in high intensity linear accelerators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jeon, D.; Hwang, Kyung Ryun

For the 4σ = 360° space-charge resonance in high intensity linear accelerators, the emittance growth is surveyed for input Gaussian beams, as a function of the depressed phase advance per cell σ and the initial tune depression (σ o – σ). For each data point, the linac lattice is designed such that the fourth order resonance dominates over the envelope instability. Additionally, the data show that the maximum emittance growth takes place at σ ≈ 87° over a wide range of the tune depression (or beam current), which confirms that the relevant parameter for the emittance growth is σ andmore » that for the bandwidth is σ o – σ. An interesting four-fold phase space structure is observed that cannot be explained with the fourth order resonance terms alone. Analysis attributes this effect to a small negative sixth order detuning term as the beam is redistributed by the resonance. Analytical studies show that the tune increases monotonically for the Gaussian beam which prevents the resonance for σ > 90°. Lastly, frequency analysis indicates that the four-fold structure observed for input Kapchinskij-Vladmirskij beams when σ < 90°, is not the fourth order resonance but a fourth order envelope instability because the 1/4 = 90°/360° component is missing in the frequency spectrum.« less

Electrically-inactive phosphorus re-distribution during low temperature annealing

NASA Astrophysics Data System (ADS)

Peral, Ana; Youssef, Amanda; Dastgheib-Shirazi, Amir; Akey, Austin; Peters, Ian Marius; Hahn, Giso; Buonassisi, Tonio; del Cañizo, Carlos

2018-04-01

An increased total dose of phosphorus (P dose) in the first 40 nm of a phosphorus diffused emitter has been measured after Low Temperature Annealing (LTA) at 700 °C using the Glow Discharge Optical Emission Spectrometry technique. This evidence has been observed in three versions of the same emitter containing different amounts of initial phosphorus. A stepwise chemical etching of a diffused phosphorus emitter has been carried out to prepare the three types of samples. The total P dose in the first 40 nm increases during annealing by 1.4 × 1015 cm-2 for the sample with the highly doped emitter, by 0.8 × 1015 cm-2 in the middle-doped emitter, and by 0.5 × 1015 cm-2 in the lowest-doped emitter. The presence of surface dislocations in the first few nanometers of the phosphorus emitter might play a role as preferential sites of local phosphorus gettering in phosphorus re-distribution, because the phosphorus gettering to the first 40 nm is lower when this region is etched stepwise. This total increase in phosphorus takes place even though the calculated electrically active phosphorus concentration shows a reduction, and the measured sheet resistance shows an increase after annealing at a low temperature. The reduced electrically active P dose is around 0.6 × 1015 cm-2 for all the emitters. This can be explained with phosphorus-atoms diffusing towards the surface during annealing, occupying electrically inactive configurations. An atomic-scale visual local analysis is carried out with needle-shaped samples of tens of nm in diameter containing a region of the highly doped emitter before and after LTA using Atom Probe Tomography, showing phosphorus precipitates of 10 nm and less before annealing and an increased density of larger precipitates after annealing (25 nm and less).

Beta Emission and Bremsstrahlung

DOE Office of Scientific and Technical Information (OSTI.GOV)

Karpius, Peter Joseph

2017-11-13

Bremsstrahlung is continuous radiation produced by beta particles decelerating in matter; different beta emitters have different endpoint energies; high-energy betas interacting with high-Z materials will more likely produce bremsstrahlung; depending on the data, sometimes all you can say is that a beta emitter is present.

Characterization of sputter deposited thin film scandate cathodes for miniaturized thermionic converter applications

NASA Astrophysics Data System (ADS)

Zavadil, Kevin R.; Ruffner, Judith H.; King, Donald B.

1999-01-01

We have successfully developed a method for fabricating scandate-based thermionic emitters in thin film form. The primary goal of our effort is to develop thin film emitters that exhibit low work function, high intrinsic electron emissivity, minimum thermal activation properties and that can be readily incorporated into a microgap converter. Our approach has been to incorporate BaSrO into a Sc2O3 matrix using rf sputtering to produce thin films. Diode testing has shown the resulting films to be electron emissive at temperatures as low as 900 K with current densities of 0.1 mA.cm-2 at 1100 K and saturation voltages. We calculate an approximate maximum work function of 1.8 eV and an apparent emission constant (Richardson's constant, A*) of 36 mA.cm-2.K-2. Film compositional and structural analysis shows that a significant surface and subsurface alkaline earth hydroxide phase can form and probably explains the limited utilization and stability of Ba and its surface complexes. The flexibility inherent in sputter deposition suggests alternate strategies for eliminating undesirable phases and optimizing thin film emitter properties.

Beam Dynamics Simulation of Photocathode RF Electron Gun at the PBP-CMU Linac Laboratory

NASA Astrophysics Data System (ADS)

Buakor, K.; Rimjaem, S.

2017-09-01

Photocathode radio-frequency (RF) electron guns are widely used at many particle accelerator laboratories due to high quality of produced electron beams. By using a short-pulse laser to induce the photoemission process, the electrons are emitted with low energy spread. Moreover, the photocathode RF guns are not suffered from the electron back bombardment effect, which can cause the limited electron current and accelerated energy. In this research, we aim to develop the photocathode RF gun for the linac-based THz radiation source. Its design is based on the existing gun at the PBP-CMU Linac Laboratory. The gun consists of a one and a half cell S-band standing-wave RF cavities with a maximum electric field of about 60 MV/m at the centre of the full cell. We study the beam dynamics of electrons traveling through the electromagnetic field inside the RF gun by using the particle tracking program ASTRA. The laser properties i.e. transverse size and injecting phase are optimized to obtain low transverse emittance. In addition, the solenoid magnet is applied for beam focusing and emittance compensation. The proper solenoid magnetic field is then investigated to find the optimum value for proper emittance conservation condition.

Development of the 2-MV Injector for HIF

NASA Astrophysics Data System (ADS)

Bieniosek, F. M.; Kwan, J. W.; Henestroza, E.; Kim, C.

2001-05-01

The 2-MV Injector consists of a 17-cm-diameter surface ionization source, an extraction diode, and an electrostatic quadrupole (ESQ) accelerator, with maximum current of 0.8 A of potassium beam at 2 MeV. Previous performance of the Injector produced a beam with adequate current and emittance but with a hollow profile at the end of the ESQ section. We have examined the profile of the beam as it leaves the diode. The measured nonuniform beam density distribution qualitatively agrees with EGUN simulation. Implications for emittance growth in the post acceleration and transport phase will be investigated.

Development of techniques and associated instrumentation for high temperature emissivity measurements

NASA Technical Reports Server (NTRS)

Cunnington, G. R.; Funaa, A. I.; Cassady, P. E.

1973-01-01

Studies were made to develop a test apparatus for the measurement of total emittance of materials under repeated exposure to simulated earth entry conditions. As no existing test facility met the emittance measurement and entry simulation goals, a new apparatus was designed, fabricated and checked out. This apparatus has the capability of performing total and spectral emittance measurements during cyclic temperature and pressure exposure under sonic and supersonic flow conditions. Emittance measurements were performed on a series of oxidized superalloys, silicide coated columbium alloys and ceramic coatings.

Thermophotovoltaic energy conversion system having a heavily doped n-type region

DOEpatents

DePoy, David M.; Charache, Greg W.; Baldasaro, Paul F.

2000-01-01

A thermophotovoltaic (TPV) energy conversion semiconductor device is provided which incorporates a heavily doped n-type region and which, as a consequence, has improved TPV conversion efficiency. The thermophotovoltaic energy conversion device includes an emitter layer having first and second opposed sides and a base layer in contact with the first side of the emitter layer. A highly doped n-type cap layer is formed on the second side of the emitter layer or, in another embodiment, a heavily doped n-type emitter layer takes the place of the cap layer.

Cavity-Free, Matrix-Addressable Quantum Dot Architecture for On-Chip Optical Switching

DTIC Science & Technology

2013-04-01

or photo-induced bleaching. Given their intrinsically low IEP (~3, close to that of SiO2) they are ideal candidates for our electrostatic self...are currently investigating usage of our method on substrates with high IEPs such as Al2O3, Si3N4, and ITO. By using nanoparticle emitters with...intrinsically high IEPs , such as MgO nanocubes and ZnO nanocrystals, we can expand the range of applicability of our self-assembly technique. Personnel

Group-III Nitride Field Emitters

NASA Technical Reports Server (NTRS)

Bensaoula, Abdelhak; Berishev, Igor

2008-01-01

Field-emission devices (cold cathodes) having low electron affinities can be fabricated through lattice-mismatched epitaxial growth of nitrides of elements from group III of the periodic table. Field emission of electrons from solid surfaces is typically utilized in vacuum microelectronic devices, including some display devices. The present field-emission devices and the method of fabricating them were developed to satisfy needs to reduce the cost of fabricating field emitters, make them compatible with established techniques for deposition of and on silicon, and enable monolithic integration of field emitters with silicon-based driving circuitry. In fabricating a device of this type, one deposits a nitride of one or more group-III elements on a substrate of (111) silicon or other suitable material. One example of a suitable deposition process is chemical vapor deposition in a reactor that contains plasma generated by use of electron cyclotron resonance. Under properly chosen growth conditions, the large mismatch between the crystal lattices of the substrate and the nitride causes strains to accumulate in the growing nitride film, such that the associated stresses cause the film to crack. The cracks lie in planes parallel to the direction of growth, so that the growing nitride film becomes divided into microscopic growing single-crystal columns. The outer ends of the fully-grown columns can serve as field-emission tips. By virtue of their chemical compositions and crystalline structures, the columns have low work functions and high electrical conductivities, both of which are desirable for field emission of electrons. From examination of transmission electron micrographs of a prototype device, the average column width was determined to be about 100 nm and the sharpness of the tips was determined to be characterized by a dimension somewhat less than 100 nm. The areal density of the columns was found to about 5 x 10(exp 9)/sq cm . about 4 to 5 orders of magnitude greater than the areal density of tips in prior field-emission devices. The electric field necessary to turn on the emission current and the current per tip in this device are both lower than in prior field-emission devices, such that it becomes possible to achieve longer operational lifetime. Moreover, notwithstanding the lower current per tip, because of the greater areal density of tips, it becomes possible to achieve greater current density averaged over the cathode area. The thickness of the grown nitride film (equivalently, the length of the columns) could lie between about 0.5 microns and a few microns; in any event, a thickness of about 1 micron is sufficient and costs less than do greater thicknesses. It may be possible to grow nitride emitter columns on glass or other substrate materials that cost less than silicon does. What is important in the choice of substrate material is the difference between the substrate and nitride crystalline structures. Inasmuch as the deposition process is nondestructive, an ability to grow emitter columns on a variety of materials would be advantageous in that it would facilitate the integration of field-emitter structures onto previously processed integrated circuits.

Improvement of carbon nanotube field emission properties by ultrasonic nanowelding

NASA Astrophysics Data System (ADS)

Zhao, Bo; Yadian, Boluo; Chen, Da; Xu, Dong; Zhang, Yafei

2008-12-01

Ultrasonic nanowelding was used to improve the field emission properties of carbon nanotube (CNT) cathodes. The CNTs were deposited on the Ti-coated glass substrate by electrophoretic deposition. By pressing CNTs against metal (Ti) substrate under a vibrating force at ultrasonic frequency, a reliable and low resistance contact was obtained between CNTs and Ti. The scanning electron microscopy results show that CNTs are embedded into the metal substrate and act as stable field emitters. The welded cathode demonstrates an excellent field emission with high emission current density and good current stability.

RF Couplers for Normal-Conducting Photoinjector of High-Power CW FEL

NASA Astrophysics Data System (ADS)

Kurennoy, Sergey; Schrage, Dale; Wood, Richard; Schultheiss, Tom; Rathke, John; Young, Lloyd

2004-05-01

A high-current emittance-compensated RF photoinjector is a key enabling technology for a high-power CW FEL. A preliminary design of a normal-conducting, 2.5-cell pi-mode, 700-MHz CW RF photoinjector that will be build for demonstration purposes, is completed. This photoinjector will be capable of accelerating a 100-mA electron beam (3 nC per bunch at 35 MHz bunch repetition rate) to 2.7 MeV while providing an emittance below 7 mm-mrad at the wiggler. More than 1 MW of RF power will be fed into the photoinjector cavity through two ridge-loaded tapered waveguides. The waveguides are coupled to the cavity by "dog-bone" irises cut in a thick wall. Due to CW operation of the photoinjector, the cooling of the coupler irises is a rather challenging thermal management project. This paper presents results of a detailed electromagnetic modeling of the coupler-cavity system, which has been performed to select the coupler design that minimizes the iris heating due to RF power loss in its walls.

Pulsed beam tests at the SANAEM RFQ beamline

NASA Astrophysics Data System (ADS)

Turemen, G.; Akgun, Y.; Alacakir, A.; Kilic, I.; Yasatekin, B.; Ergenlik, E.; Ogur, S.; Sunar, E.; Yildiz, V.; Ahiska, F.; Cicek, E.; Unel, G.

2017-07-01

A proton beamline consisting of an inductively coupled plasma (ICP) source, two solenoid magnets, two steerer magnets and a radio frequency quadrupole (RFQ) is developed at the Turkish Atomic Energy Authority’s (TAEA) Saraykoy Nuclear Research and Training Center (SNRTC-SANAEM) in Ankara. In Q4 of 2016, the RFQ was installed in the beamline. The high power tests of the RF power supply and the RF transmission line were done successfully. The high power RF conditioning of the RFQ was performed recently. The 13.56 MHz ICP source was tested in two different conditions, CW and pulsed. The characterization of the proton beam was done with ACCTs, Faraday cups and a pepper-pot emittance meter. Beam transverse emittance was measured in between the two solenoids of the LEBT. The measured beam is then reconstructed at the entrance of the RFQ by using computer simulations to determine the optimum solenoid currents for acceptance matching of the beam. This paper will introduce the pulsed beam test results at the SANAEM RFQ beamline. In addition, the high power RF conditioning of the RFQ will be discussed.

Multi-messenger Light Curves from Gamma-Ray Bursts in the Internal Shock Model

NASA Astrophysics Data System (ADS)

Bustamante, Mauricio; Heinze, Jonas; Murase, Kohta; Winter, Walter

2017-03-01

Gamma-ray bursts (GRBs) are promising as sources of neutrinos and cosmic rays. In the internal shock scenario, blobs of plasma emitted from a central engine collide within a relativistic jet and form shocks, leading to particle acceleration and emission. Motivated by present experimental constraints and sensitivities, we improve the predictions of particle emission by investigating time-dependent effects from multiple shocks. We produce synthetic light curves with different variability timescales that stem from properties of the central engine. For individual GRBs, qualitative conclusions about model parameters, neutrino production efficiency, and delays in high-energy gamma-rays can be deduced from inspection of the gamma-ray light curves. GRBs with fast time variability without additional prominent pulse structure tend to be efficient neutrino emitters, whereas GRBs with fast variability modulated by a broad pulse structure can be inefficient neutrino emitters and produce delayed high-energy gamma-ray signals. Our results can be applied to quantitative tests of the GRB origin of ultra-high-energy cosmic rays, and have the potential to impact current and future multi-messenger searches.

Concepts for high efficient white OLEDs for lighting applications

NASA Astrophysics Data System (ADS)

Hunze, A.; Krause, R.; Seidel, S.; Weiss, O.; Kozlowski, F.; Schmid, G.; Meyer, J.; Kröger, M.; Johannes, H. H.; Kowalsky, W.; Dobbertin, T.

2007-09-01

Apart from usage of organic light emitting diodes for flat panel display applications OLEDs are a potential candidate for the next solid state lighting technology. One key parameter is the development of high efficient, stable white devices. To realize this goal there are different concepts. Especially by using highly efficient phosphorescent guest molecules doped into a suitable host material high efficiency values can be obtained. We started our investigations with a single dopant and extended this to a two phosphorescent emitter approach leading to a device with a high power efficiency of more than 25 lm/W @ 1000 cd/m2. The disadvantage of full phosphorescent device setups is that esp. blue phosphorescent emitters show an insufficient long-term stability. A possibility to overcome this problem is the usage of more stable fluorescent blue dopants, whereas, due to the fact that only singlet excitons can decay radiatively, the efficiency is lower. With a concept, proposed by Sun et al.1 in 2006, it is possible to manage the recombination zone and thus the contribution from the different dopants. With this approach stable white color coordinates with sufficient current efficiency values have been achieved.

High brightness fiber laser pump sources based on single emitters and multiple single emitters

NASA Astrophysics Data System (ADS)

Scheller, Torsten; Wagner, Lars; Wolf, Jürgen; Bonati, Guido; Dörfel, Falk; Gabler, Thomas

2008-02-01

Driven by the potential of the fiber laser market, the development of high brightness pump sources has been pushed during the last years. The main approaches to reach the targets of this market had been the direct coupling of single emitters (SE) on the one hand and the beam shaping of bars and stacks on the other hand, which often causes higher cost per watt. Meanwhile the power of single emitters with 100μm emitter size for direct coupling increased dramatically, which also pushed a new generation of wide stripe emitters or multi emitters (ME) of up to 1000μm emitter size respectively "minibars" with apertures of 3 to 5mm. The advantage of this emitter type compared to traditional bars is it's scalability to power levels of 40W to 60W combined with a small aperture which gives advantages when coupling into a fiber. We show concepts using this multiple single emitters for fiber coupled systems of 25W up to 40W out of a 100μm fiber NA 0.22 with a reasonable optical efficiency. Taking into account a further efficiency optimization and an increase in power of these devices in the near future, the EUR/W ratio pushed by the fiber laser manufacturer will further decrease. Results will be shown as well for higher power pump sources. Additional state of the art tapered fiber bundles for photonic crystal fibers are used to combine 7 (19) pump sources to output powers of 100W (370W) out of a 130μm (250μm) fiber NA 0.6 with nominal 20W per port. Improving those TFB's in the near future and utilizing 40W per pump leg, an output power of even 750W out of 250μm fiber NA 0.6 will be possible. Combined Counter- and Co-Propagated pumping of the fiber will then lead to the first 1kW fiber laser oscillator.

Compact, Intelligent, Digitally Controlled IGBT Gate Drivers for a PEBB-Based ILC Marx Modulator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nguyen, M.N.; Burkhart, C.; Olsen, J.J.

2010-06-07

SLAC National Accelerator Laboratory has built and is currently operating a first generation prototype Marx klystron modulator to meet ILC specifications. Under development is a second generation prototype, aimed at improving overall performance, serviceability, and manufacturability as compared to its predecessor. It is designed around 32 cells, each operating at 3.75 kV and correcting for its own capacitor droop. Due to the uniqueness of this application, high voltage gate drivers needed to be developed for the main 6.5 kV and droop correction 1.7 kV IGBTs. The gate driver provides vital functions such as protection of the IGBT from over-voltage andmore » over-current, detection of gate-emitter open and short circuit conditions, and monitoring of IGBT degradation (based on collector-emitter saturation voltage). Gate drive control, diagnostic processing capabilities, and communication are digitally implemented using an FPGA. This paper details the design of the gate driver circuitry, component selection, and construction layout. In addition, experimental results are included to illustrate the effectiveness of the protection circuit.« less

Overview of Lattice Design and Evaluation for the APS Upgrade

DOE PAGES

Borland, M.; Emery, L.; Lindberg, R.; ...

2017-08-01

The Advanced Photon Source (APS) is a 7-GeV synchrotron light source that has been in operation since 1996. Since that time, the effective emittance has been decreased from 8 nm to 3.1 nm, which is very competitive for a 3rd-generation light source. However, newer facilities such as PETRA-III, NSLS-II, and MAX-IV are pushing the emittance to significantly smaller values. MAX-IV in particular has set the current benchmark with an emittance of about 300 pm at 3 GeV. This was accomplished by use of a multi-bend achromat lattice, which takes advantage of the 1/M3 scaling of the emittance with respect tomore » the number of dipoles M. In order to ensure that our facility remains competitive, APS is pursuing a major upgrade, which involves replacement of the existing double-bend lattice with a seven-bend achromat lattice, promising a 40-fold reduction in emittance. This paper describes the process of developing and evaluating candidate lattice designs. Two candidate 6-GeV lattices are described: one providing a natural emittance of 67 pm and the other providing 41 pm. Our analysis includes single-particle dynamics as well as single- and multi-bunch collective effects.« less

Tunable and high-purity room temperature single-photon emission from atomic defects in hexagonal boron nitride

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grosso, Gabriele; Moon, Hyowon; Lienhard, Benjamin

Two-dimensional van der Waals materials have emerged as promising platforms for solid-state quantum information processing devices with unusual potential for heterogeneous assembly. Recently, bright and photostable single photon emitters were reported from atomic defects in layered hexagonal boron nitride (hBN), but controlling inhomogeneous spectral distribution and reducing multi-photon emission presented open challenges. Here, we demonstrate that strain control allows spectral tunability of hBN single photon emitters over 6 meV, and material processing sharply improves the single photon purity. We observe high single photon count rates exceeding 7 × 10 6 counts per second at saturation, after correcting for uncorrelated photonmore » background. Furthermore, these emitters are stable to material transfer to other substrates. High-purity and photostable single photon emission at room temperature, together with spectral tunability and transferability, opens the door to scalable integration of high-quality quantum emitters in photonic quantum technologies.« less

Tunable and high-purity room temperature single-photon emission from atomic defects in hexagonal boron nitride

DOE PAGES

Grosso, Gabriele; Moon, Hyowon; Lienhard, Benjamin; ...

2017-09-26

Two-dimensional van der Waals materials have emerged as promising platforms for solid-state quantum information processing devices with unusual potential for heterogeneous assembly. Recently, bright and photostable single photon emitters were reported from atomic defects in layered hexagonal boron nitride (hBN), but controlling inhomogeneous spectral distribution and reducing multi-photon emission presented open challenges. Here, we demonstrate that strain control allows spectral tunability of hBN single photon emitters over 6 meV, and material processing sharply improves the single photon purity. We observe high single photon count rates exceeding 7 × 10 6 counts per second at saturation, after correcting for uncorrelated photonmore » background. Furthermore, these emitters are stable to material transfer to other substrates. High-purity and photostable single photon emission at room temperature, together with spectral tunability and transferability, opens the door to scalable integration of high-quality quantum emitters in photonic quantum technologies.« less

Nanodiamonds with photostable, sub-gigahertz linewidth quantum emitters

NASA Astrophysics Data System (ADS)

Tran, Toan Trong; Kianinia, Mehran; Bray, Kerem; Kim, Sejeong; Xu, Zai-Quan; Gentle, Angus; Sontheimer, Bernd; Bradac, Carlo; Aharonovich, Igor

2017-11-01

Single-photon emitters with narrow linewidths are highly sought after for applications in quantum information processing and quantum communications. In this letter, we report on a bright, highly polarized near infrared single photon emitter embedded in diamond nanocrystals with a narrow, sub-GHz optical linewidth at 10 K. The observed zero-phonon line at ˜780 nm is optically stable under low power excitation and blue shifts as the excitation power increases. Our results highlight the prospect for using new near infrared color centers in nanodiamonds for quantum applications.

Manipulating the Electronic Excited State Energies of Pyrimidine-Based Thermally Activated Delayed Fluorescence Emitters To Realize Efficient Deep-Blue Emission.

PubMed

Komatsu, Ryutaro; Ohsawa, Tatsuya; Sasabe, Hisahiro; Nakao, Kohei; Hayasaka, Yuya; Kido, Junji

2017-02-08

The development of efficient and robust deep-blue emitters is one of the key issues in organic light-emitting devices (OLEDs) for environmentally friendly, large-area displays or general lighting. As a promising technology that realizes 100% conversion from electrons to photons, thermally activated delayed fluorescence (TADF) emitters have attracted considerable attention. However, only a handful of examples of deep-blue TADF emitters have been reported to date, and the emitters generally show large efficiency roll-off at practical luminance over several hundreds to thousands of cd m -2 , most likely because of the long delayed fluorescent lifetime (τ d ). To overcome this problem, we molecularly manipulated the electronic excited state energies of pyrimidine-based TADF emitters to realize deep-blue emission and reduced τ d . We then systematically investigated the relationships among the chemical structure, properties, and device performances. The resultant novel pyrimidine emitters, called Ac-XMHPMs (X = 1, 2, and 3), contain different numbers of bulky methyl substituents at acceptor moieties, increasing the excited singlet (E S ) and triplet state (E T ) energies. Among them, Ac-3MHPM, with a high E T of 2.95 eV, exhibited a high external quantum efficiency (η ext,max ) of 18% and an η ext of 10% at 100 cd m -2 with Commission Internationale de l'Eclairage chromaticity coordinates of (0.16, 0.15). These efficiencies are among the highest values to date for deep-blue TADF OLEDs. Our molecular design strategy provides fundamental guidance to design novel deep-blue TADF emitters.

Preliminary study of a solar selective coating system using black cobalt oxide for high temperature solar collectors

NASA Technical Reports Server (NTRS)

Mcdonald, G.

1980-01-01

Black cobalt oxide coatings (high solar absorptance layer) were deposited on thin layers of silver or gold (low emittance layer) which had been previously deposited on oxidized (diffusion barrier layer) stainless steel substrates. The reflectance properties of these coatings were measured at various thicknesses of cobalt for integrated values of the solar and infrared spectrum. The values of absorptance and emittance were calculated from the measured reflectance values, before and after exposure in air at 650 C for approximately 1000 hours. Absorptance and emittance were interdependent functions of the weight of cobalt oxide. Also, these cobalt oxide/noble metal/oxide diffusion barrier coatings have absorptances greater than 0.90 and emittances of approximately 0.20 even after about 1000 hours at 650 C.

Selective Emitters

NASA Technical Reports Server (NTRS)

Chubb, Donald L. (Inventor)

1992-01-01

This invention relates to a small particle selective emitter for converting thermal energy into narrow band radiation with high efficiency. The small particle selective emitter is used in combination with a photovoltaic array to provide a thermal to electrical energy conversion device. An energy conversion apparatus of this type is called a thermo-photovoltaic device. In the first embodiment, small diameter particles of a rare earth oxide are suspended in an inert gas enclosed between concentric cylinders. The rare earth oxides are used because they have the desired property of large emittance in a narrow wavelength band and small emittance outside the band. However, it should be emphasized that it is the smallness of the particles that enhances the radiation property. The small particle selective emitter is surrounded by a photovoltaic array. In an alternate embodiment, the small particle gas mixture is circulated through a thermal energy source. This thermal energy source can be a nuclear reactor, solar receiver, or combustor of a fossil fuel.

Deterministic strain-induced arrays of quantum emitters in a two-dimensional semiconductor

PubMed Central

Branny, Artur; Kumar, Santosh; Proux, Raphaël; Gerardot, Brian D

2017-01-01

An outstanding challenge in quantum photonics is scalability, which requires positioning of single quantum emitters in a deterministic fashion. Site positioning progress has been made in established platforms including defects in diamond and self-assembled quantum dots, albeit often with compromised coherence and optical quality. The emergence of single quantum emitters in layered transition metal dichalcogenide semiconductors offers new opportunities to construct a scalable quantum architecture. Here, using nanoscale strain engineering, we deterministically achieve a two-dimensional lattice of quantum emitters in an atomically thin semiconductor. We create point-like strain perturbations in mono- and bi-layer WSe2 which locally modify the band-gap, leading to efficient funnelling of excitons towards isolated strain-tuned quantum emitters that exhibit high-purity single photon emission. We achieve near unity emitter creation probability and a mean positioning accuracy of 120±32 nm, which may be improved with further optimization of the nanopillar dimensions. PMID:28530219

Comparison of Tungsten and Molybdenum Based Emitters for Advanced Thermionic Space Nuclear Reactors

NASA Astrophysics Data System (ADS)

Lee, Hsing H.; Dickinson, Jeffrey W.; Klein, Andrew C.; Lamp, Thomas R.

1994-07-01

Variations to the Advanced Thermionic Initiative thermionic fuel element are analyzed. Analysis included neutronic modeling with MCNP for criticality determination and thermal power distribution, and thermionic performance modeling with TFEHX. Changes to the original ATI configuration include the addition of W-HfC wire to the emitter for high temperature creep resistance improvement and substitution of molybdenum for the tungsten base material. Results from MCNP showed that all the tungsten used in the coating and base material must be 100% W-184 to obtain criticality. The presence of molybdenum in the emitter base affects the neutronic performance of the TFE by increasing the emitter neutron absorption cross section. Due to the reduced thermal conductivity for the molybdenum based emitter, a higher temperature is obtained resulting in a greater electrical power production. The thermal conductivity and resistivity of the composite emitter region were derived for the W-Mo composite and used in TFEHX.

Novel molecular host materials based on carbazole/PO hybrids with wide bandgap via unique linkages for solution-processed blue phosphorescent OLEDs

NASA Astrophysics Data System (ADS)

Ye, Hua; Zhou, Kaifeng; Wu, Hongyu; Chen, Kai; Xie, Gaozhan; Hu, Jingang; Yan, Guobing; Ma, Songhua; Su, Shi-Jian; Cao, Yong

2016-10-01

A series of novel molecules with wide bandgap based on electron-withdrawing diphenyl phosphine oxide units and electron-donating carbazolyl moieties through insulated unique linkages of flexible chains terminated by oxygen or sulfur atoms as solution-processable host materials were successfully synthesized for the first time, and their thermal, photophysical, and electrochemical properties were studied thoroughly. These materials possess high triplet energy levels (ET, 2.76-2.77 eV) due to the introduction of alkyl chain to interrupt the conjugation between electron-donor and electron-acceptor. Such high ET could effectively curb the energy from phosphorescent emitter transfer to the host molecules and thus assuring the emission of devices was all from the blue phosphorescent emitter iridium (III) bis [(4,6-difluorophenyl)-pyridinate-N,C2‧]picolinate (FIrpic). Among them, the solution-processed device based on CBCR6OPO without extra vacuum thermal-deposited hole-blocking layer and electron-transporting layer showed the highest maximum current efficiency (CEmax) of 4.16 cd/A. Moreover, the device presented small efficiency roll-off with current efficiency (CE) of 4.05 cd/A at high brightness up to 100 cd/m2. Our work suggests the potential applications of the solution-processable materials with wide bandgap in full-color flat-panel displays and organic lighting.

A cesium TELEC experiment at Lewis Research Center

NASA Technical Reports Server (NTRS)

Britt, E. J.

1979-01-01

The thermoelectronic laser energy converter (TELEC), was studied as a method of converting a 10.6 mm CO2 laser beam into electric power. The calculated characteristics of a TELEC seem to be well matched to the requirements of a spacecraft laser energy conversion system. The TELEC is a high power density plasma device which absorbs an intense laser beam by inverse bremsstrahlung with the plasma electrons. In the TELEC process, electromagnetic radiation is absorbed directly in the plasma electrons producing a high electron temperature. The energetic electrons diffuse out of the plasma striking two electrodes which are in contact with the plasma at the boundaries. These two electrodes have different areas: the larger one is designated as the collector, the smaller one is designated as the emitter. The smaller electrode functions as an electron emitter to provide continuity of the current. Waste heat is rejected from the collector electrode. An experiment was carried out with a high power laser using a cesium vapor TELEC cell with 30 cm active length. Laser supported plasma was produced in the TELEC device during a number of laser runs over a period of several days. Electric power from the TELEC was observed with currents in the range of several amperes and output potentials of less than 1 volt. The magnitudes of these electric outputs were smaller than anticipated but consistent with the power levels of the laser during this experiment.

ALMA deep field in SSA22: Blindly detected CO emitters and [C II] emitter candidates

NASA Astrophysics Data System (ADS)

Hayatsu, Natsuki H.; Matsuda, Yuichi; Umehata, Hideki; Yoshida, Naoki; Smail, Ian; Swinbank, A. Mark; Ivison, Rob; Kohno, Kotaro; Tamura, Yoichi; Kubo, Mariko; Iono, Daisuke; Hatsukade, Bunyo; Nakanishi, Kouichiro; Kawabe, Ryohei; Nagao, Tohru; Inoue, Akio K.; Takeuchi, Tsutomu T.; Lee, Minju; Ao, Yiping; Fujimoto, Seiji; Izumi, Takuma; Yamaguchi, Yuki; Ikarashi, Soh; Yamada, Toru

2017-06-01

We report the identification of four millimeter line-emitting galaxies with the Atacama Large Milli/submillimeter Array (ALMA) in SSA22 Field (ADF22). We analyze the ALMA 1.1-mm survey data, with an effective survey area of 5 arcmin2, frequency ranges of 253.1-256.8 and 269.1-272.8 GHz, angular resolution of 0{^''.}7 and rms noise of 0.8 mJy beam-1 at 36 km s-1 velocity resolution. We detect four line-emitter candidates with significance levels above 6σ. We identify one of the four sources as a CO(9-8) emitter at z = 3.1 in a member of the proto-cluster known in this field. Another line emitter with an optical counterpart is likely a CO(4-3) emitter at z = 0.7. The other two sources without any millimeter continuum or optical/near-infrared counterpart are likely to be [C II] emitter candidates at z = 6.0 and 6.5. The equivalent widths of the [C II] candidates are consistent with those of confirmed high-redshift [C II] emitters and candidates, and are a factor of 10 times larger than that of the CO(9-8) emitter detected in this search. The [C II] luminosity of the candidates are 4-7 × 108 L⊙. The star formation rates (SFRs) of these sources are estimated to be 10-20 M⊙ yr-1 if we adopt an empirical [C II] luminosity-SFR relation. One of them has a relatively low S/N ratio, but shows features characteristic of emission lines. Assuming that at least one of the two candidates is a [C II] emitter, we derive a lower limit of [C II]-based star formation rate density (SFRD) at z ˜ 6. The resulting value of >10-2 M⊙ yr-1 Mpc-3 is consistent with the dust-uncorrected UV-based SFRD. Future millimeter/submillimeter surveys can be used to detect a number of high-redshift line emitters, with which to study the star formation history in the early universe.

Fabrication and characterization of heterojunction transistors

NASA Astrophysics Data System (ADS)

Lo, Chien-Fong

2011-12-01

Submircon emitter finger high-speed double heterojunction InAlAs/InGaAsSb/InGaAs bipolar transistors (DHBTs) and a variety of nitride high electron mobility transistors (HEMTs) including AlGaN/GaN, InAlN/GaN, and AlN/GaN were fabricated and characterized. DHBT structures were grown by solid source molecular beam epitaxy (SSMBE) on Fe-doped semiinsulating InP substrates and nitride HEMTs were grown with a metal organic chemical vapor deposition (MOCVD) system on sapphire or SiC substrates. AlN/GaN HEMTs were grown with a RF-VMBE on sapphire substrates. Ultra low base contact resistance of 3.7 x 10-7 ohm-cm2 after 1 min 250¢XC thermal treatment on noval InGaAsSb base of DHBTs was achieved and a long-term thermal stability of base metallization was studied. Regarding small scale DHBT fabrication, tri-layer system was introduced to improve the resolution for submicron emitter patterning and help to pile up a thicker emitter metal stack; guard-ring technique was applied around the emitter periphery in order to preserve the current gain at small emitter dimensions. Ultra low turn-on voltage and high current gain can be realized with InGaAsSb-base DHBTs as compared to the conventional InGaAs-base DHBTs. A peak current gain cutoff frequency (fT) of 268 GHz and power gain cutoff frequency (fmax) of 485 GHz were achieved. GaN-based HEMTs herein were fabricated with gate lengths from 400 nm to 1im, and were deposited Ti/Al/Ni/Au as their Ohmic contact metallization. Effects of the Ohmic contact annealing for lattice-matched InAlN/GaN HEMTs with and without a thin GaN cap layer were exhibited and their optimal annealing temperature were obtained. A maximum drain current of 1.3 A/mm and an extrinsic transconductance of 366 mS/mm were demonstrated for InAlN/GaN HEMTs with the shortest gate length. A unity-gain cutoff frequency (fT) of 69 GHz and a maximum frequency of oscillation (fmax) of 80 GHz for InAlN/GaN HEMTs were extracted from measured scattering parameters. Passivation is one of the most important parts in device processing for preventing degradation from various environmental conditions and promising a better device performance. Simply, ozone treatment of AlN on AlN/GaN heterostructures produced effective aluminum oxide surface passivation and chemical resistance to the AZ positive photoresist developer used for subsequent device fabrication. Metal oxide semiconductor diode-like gate current-voltage characteristics and minimal drain current degradation during gate pulse measurements were observed. With an additional oxygen plasma treatment on the gate area prior to the gate metal deposition, enhancement-mode AlN/GaN HEMTs were realized. In addition, for AlGaN/GaN HEMTs in high electrical field applications, a high-dielectric-strength SiNx passivation over an optimum thickness was needed to suppress surface flashover during a high voltage or high power operation. An excellent isolation blocking voltage of 900 V with a leakage current at 1 muA/mm was obtained across a nitrogen-implanted isolation-gap of 10 mum between two Ohmic pads. The radiation hardness of HBTs and HEMTs is one of the critical factors that need to be established for military, space, and nuclear industry applications. The effects of proton radiation on the dc performance of InAlAs/InGaAsSb/InGaAs HBTs and AlN/GaN HEMTs were investigated. Both of these devices showed a remarkable resistance to high energy protoninduced degradation and appeared very promising for terrestrial or space-borne applications. The proton-irradiated devices with a dose of 2 x 1011 cm-2 (estimated to be equivalent to more than 40 years of exposure in low-earth orbit) showed only small changes in dc transfer characteristics, threshold voltage shift, and gate-lag with a high frequency pulse on the gate of the HEMTs and showed small changes in junction ideality factor, generation recombination leakage current, and output conductance for the HBTs. The effect the gate metallization on the nitride HEMT reliability was also examined. By replacing the conventional Ni/Au gate metallization with Pt/Ti/Au, the critical voltage for degradation of AlGaN/GaN HEMTs during off-state biasing stress was significantly improved from -55 V to over larger than -100 V. Besides the irradiation or high voltage stresses, the effects of ambient on the Pt-gated HEMT sensor for gas sensing application were also explored. For the hydrogen sensing, the sensitivity decreased proportional to the relative humidity but the presence of humidity dramatically improved the sensor recovery characteristics after exposure to the hydrogen ambient.

Enhancement of time images for photointerpretation

NASA Technical Reports Server (NTRS)

Gillespie, A. R.

1986-01-01

The Thermal Infrared Multispectral Scanner (TIMS) images consist of six channels of data acquired in bands between 8 and 12 microns, thus they contain information about both temperature and emittance. Scene temperatures are controlled by reflectivity of the surface, but also by its geometry with respect to the Sun, time of day, and other factors unrelated to composition. Emittance is dependent upon composition alone. Thus the photointerpreter may wish to enhance emittance information selectively. Because thermal emittances in real scenes vary but little, image data tend to be highly correlated along channels. Special image processing is required to make this information available for the photointerpreter. Processing includes noise removal, construction of model emittance images, and construction of false-color pictures enhanced by decorrelation techniques.

Laser acceleration of quasi-monoenergetic MeV ion beams.

PubMed

Hegelich, B M; Albright, B J; Cobble, J; Flippo, K; Letzring, S; Paffett, M; Ruhl, H; Schreiber, J; Schulze, R K; Fernández, J C

2006-01-26

Acceleration of particles by intense laser-plasma interactions represents a rapidly evolving field of interest, as highlighted by the recent demonstration of laser-driven relativistic beams of monoenergetic electrons. Ultrahigh-intensity lasers can produce accelerating fields of 10 TV m(-1) (1 TV = 10(12) V), surpassing those in conventional accelerators by six orders of magnitude. Laser-driven ions with energies of several MeV per nucleon have also been produced. Such ion beams exhibit unprecedented characteristics--short pulse lengths, high currents and low transverse emittance--but their exponential energy spectra have almost 100% energy spread. This large energy spread, which is a consequence of the experimental conditions used to date, remains the biggest impediment to the wider use of this technology. Here we report the production of quasi-monoenergetic laser-driven C5+ ions with a vastly reduced energy spread of 17%. The ions have a mean energy of 3 MeV per nucleon (full-width at half-maximum approximately 0.5 MeV per nucleon) and a longitudinal emittance of less than 2 x 10(-6) eV s for pulse durations shorter than 1 ps. Such laser-driven, high-current, quasi-monoenergetic ion sources may enable significant advances in the development of compact MeV ion accelerators, new diagnostics, medical physics, inertial confinement fusion and fast ignition.

Single Crystal Diamond Needle as Point Electron Source

PubMed Central

Kleshch, Victor I.; Purcell, Stephen T.; Obraztsov, Alexander N.

2016-01-01

Diamond has been considered to be one of the most attractive materials for cold-cathode applications during past two decades. However, its real application is hampered by the necessity to provide appropriate amount and transport of electrons to emitter surface which is usually achieved by using nanometer size or highly defective crystallites having much lower physical characteristics than the ideal diamond. Here, for the first time the use of single crystal diamond emitter with high aspect ratio as a point electron source is reported. Single crystal diamond needles were obtained by selective oxidation of polycrystalline diamond films produced by plasma enhanced chemical vapor deposition. Field emission currents and total electron energy distributions were measured for individual diamond needles as functions of extraction voltage and temperature. The needles demonstrate current saturation phenomenon and sensitivity of emission to temperature. The analysis of the voltage drops measured via electron energy analyzer shows that the conduction is provided by the surface of the diamond needles and is governed by Poole-Frenkel transport mechanism with characteristic trap energy of 0.2–0.3 eV. The temperature-sensitive FE characteristics of the diamond needles are of great interest for production of the point electron beam sources and sensors for vacuum electronics. PMID:27731379

Phosphorescent cyclometalated complexes for efficient blue organic light-emitting diodes

PubMed Central

Suzuri, Yoshiyuki; Oshiyama, Tomohiro; Ito, Hiroto; Hiyama, Kunihisa; Kita, Hiroshi

2014-01-01

Phosphorescent emitters are extremely important for efficient organic light-emitting diodes (OLEDs), which attract significant attention. Phosphorescent emitters, which have a high phosphorescence quantum yield at room temperature, typically contain a heavy metal such as iridium and have been reported to emit blue, green and red light. In particular, the blue cyclometalated complexes with high efficiency and high stability are being developed. In this review, we focus on blue cyclometalated complexes. Recent progress of computational analysis necessary to design a cyclometalated complex is introduced. The prediction of the radiative transition is indispensable to get an emissive cyclometalated complex. We summarize four methods to control phosphorescence peak of the cyclometalated complex: (i) substituent effect on ligands, (ii) effects of ancillary ligands on heteroleptic complexes, (iii) design of the ligand skeleton, and (iv) selection of the central metal. It is considered that novel ligand skeletons would be important to achieve both a high efficiency and long lifetime in the blue OLEDs. Moreover, the combination of an emitter and a host is important as well as the emitter itself. According to the dependences on the combination of an emitter and a host, the control of exciton density of the triplet is necessary to achieve both a high efficiency and a long lifetime, because the annihilations of the triplet state cause exciton quenching and material deterioration. PMID:27877712

Phosphorescent cyclometalated complexes for efficient blue organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Suzuri, Yoshiyuki; Oshiyama, Tomohiro; Ito, Hiroto; Hiyama, Kunihisa; Kita, Hiroshi

2014-10-01

Phosphorescent emitters are extremely important for efficient organic light-emitting diodes (OLEDs), which attract significant attention. Phosphorescent emitters, which have a high phosphorescence quantum yield at room temperature, typically contain a heavy metal such as iridium and have been reported to emit blue, green and red light. In particular, the blue cyclometalated complexes with high efficiency and high stability are being developed. In this review, we focus on blue cyclometalated complexes. Recent progress of computational analysis necessary to design a cyclometalated complex is introduced. The prediction of the radiative transition is indispensable to get an emissive cyclometalated complex. We summarize four methods to control phosphorescence peak of the cyclometalated complex: (i) substituent effect on ligands, (ii) effects of ancillary ligands on heteroleptic complexes, (iii) design of the ligand skeleton, and (iv) selection of the central metal. It is considered that novel ligand skeletons would be important to achieve both a high efficiency and long lifetime in the blue OLEDs. Moreover, the combination of an emitter and a host is important as well as the emitter itself. According to the dependences on the combination of an emitter and a host, the control of exciton density of the triplet is necessary to achieve both a high efficiency and a long lifetime, because the annihilations of the triplet state cause exciton quenching and material deterioration.

'Squeezing' near-field thermal emission for ultra-efficient high-power thermophotovoltaic conversion.

PubMed

Karalis, Aristeidis; Joannopoulos, J D

2016-07-01

We numerically demonstrate near-field planar ThermoPhotoVoltaic systems with very high efficiency and output power, at large vacuum gaps. Example performances include: at 1200 °K emitter temperature, output power density 2 W/cm(2) with ~47% efficiency at 300 nm vacuum gap; at 2100 °K, 24 W/cm(2) with ~57% efficiency at 200 nm gap; and, at 3000 °K, 115 W/cm(2) with ~61% efficiency at 140 nm gap. Key to this striking performance is a novel photonic design forcing the emitter and cell single modes to cros resonantly couple and impedance-match just above the semiconductor bandgap, creating there a 'squeezed' narrowband near-field emission spectrum. Specifically, we employ surface-plasmon-polariton thermal emitters and silver-backed semiconductor-thin-film photovoltaic cells. The emitter planar plasmonic nature allows for high-power and stable high-temperature operation. Our simulations include modeling of free-carrier absorption in both cell electrodes and temperature dependence of the emitter properties. At high temperatures, the efficiency enhancement via resonant mode cross-coupling and matching can be extended to even higher power, by appropriately patterning the silver back electrode to enforce also an absorber effective surface-plasmon-polariton mode. Our proposed designs can therefore lead the way for mass-producible and low-cost ThermoPhotoVoltaic micro-generators and solar cells.

‘Squeezing’ near-field thermal emission for ultra-efficient high-power thermophotovoltaic conversion

PubMed Central

Karalis, Aristeidis; Joannopoulos, J. D.

2016-01-01

We numerically demonstrate near-field planar ThermoPhotoVoltaic systems with very high efficiency and output power, at large vacuum gaps. Example performances include: at 1200 °K emitter temperature, output power density 2 W/cm2 with ~47% efficiency at 300 nm vacuum gap; at 2100 °K, 24 W/cm2 with ~57% efficiency at 200 nm gap; and, at 3000 °K, 115 W/cm2 with ~61% efficiency at 140 nm gap. Key to this striking performance is a novel photonic design forcing the emitter and cell single modes to cros resonantly couple and impedance-match just above the semiconductor bandgap, creating there a ‘squeezed’ narrowband near-field emission spectrum. Specifically, we employ surface-plasmon-polariton thermal emitters and silver-backed semiconductor-thin-film photovoltaic cells. The emitter planar plasmonic nature allows for high-power and stable high-temperature operation. Our simulations include modeling of free-carrier absorption in both cell electrodes and temperature dependence of the emitter properties. At high temperatures, the efficiency enhancement via resonant mode cross-coupling and matching can be extended to even higher power, by appropriately patterning the silver back electrode to enforce also an absorber effective surface-plasmon-polariton mode. Our proposed designs can therefore lead the way for mass-producible and low-cost ThermoPhotoVoltaic micro-generators and solar cells. PMID:27363522

Advancements in high-power high-brightness laser bars and single emitters for pumping and direct diode application

NASA Astrophysics Data System (ADS)

An, Haiyan; Jiang, Ching-Long J.; Xiong, Yihan; Zhang, Qiang; Inyang, Aloysius; Felder, Jason; Lewin, Alexander; Roff, Robert; Heinemann, Stefan; Schmidt, Berthold; Treusch, Georg

2015-03-01

We have continuously optimized high fill factor bar and packaging design to increase power and efficiency for thin disc laser system pump application. On the other hand, low fill factor bars packaged on the same direct copper bonded (DCB) cooling platform are used to build multi-kilowatt direct diode laser systems. We have also optimized the single emitter designs for fiber laser pump applications. In this paper, we will give an overview of our recent advances in high power high brightness laser bars and single emitters for pumping and direct diode application. We will present 300W bar development results for our next generation thin disk laser pump source. We will also show recent improvements on slow axis beam quality of low fill factor bar and its application on performance improvement of 4-5 kW TruDiode laser system with BPP of 30 mm*mrad from a 600 μm fiber. Performance and reliability results of single emitter for multiemitter fiber laser pump source will be presented as well.

Development of a High Ionization Efficiency Molten Glass Ion Emitter for TIMS

NASA Astrophysics Data System (ADS)

Cheversia, M. B.; Farmer, G.; Koval, C.; David, D.

2006-12-01

Thermal ionization mass spectrometry (TIMS) remains the method of choice for many high precision isotope ratio determinations but is handicapped by the use of low efficiency ion emitters. For example, ionization efficiencies from molten glass emitters (Si-gel) used for such elements as Pb, Cr, Ru, and Ag are in the range of 0.05-2%, which limits the sample size and the precision to which isotope ratio determinations for these elements can be made. Our aim is to improve the ionization efficiency of the molten glass ion emitter using electrochemical methods. This work builds on recent observations indicating that many metals doped in borosilicate glasses (eg. Bi, Ag), are emitted from the liquid glass (in vacuo) primarily as the neutral metal atom. Our goal is to increase the proportion of singly charged metal atoms in metal-doped molten glasses via oxidation induced by electrochemical methods and to assess whether such in situ oxidation of metal atoms leads to an increase in emitted metal ions. Our experiments are performed in a vacuum chamber that mimics conditions in the sample chamber of the TIMS. A borosilicate glass sample is placed in a miniature ceramic crucible. The crucible contains working and reference Pt electrodes, and a Pt thermocouple. The entire apparatus is wrapped with a resistively heated Ta wire until temperatures in the glass reach approximately 1400°C, to ensure that the glass is molten. By this method, we have produced simple cyclic voltammograms that suggest that over a 100°C temperature range, the borosilicate glass undergoes a transition from resistive behavior as a solid, to a conductive electrolyte, as a molten liquid glass, as expected. The change is evident as an order of magnitude decrease in resistivity of the glass, as interpreted from the voltammograms. The voltammograms produced for the pure borosilicate glasses represent the baseline against which we will compare the electrochemical characteristics of Pb doped glasses. These experiments are currently underway and are designed to determine the speciation of lead in the glass, and to determine the voltages required to induce cathodic currents in the glass corresponding to ionization to Pb+ and Pb2+. By generating a cathodic current and an increased concentration of the oxidized species, we hope to ultimately generate a higher intensity ion beam, higher ionization efficiency for low efficiency elements, and higher precision analyses on small sample sizes for the TIMS.

A study of the effect of in-line and perpendicular magnetic fields on beam characteristics of electron guns in medical linear accelerators.

PubMed

Constantin, Dragoş E; Fahrig, Rebecca; Keall, Paul J

2011-07-01

Using magnetic resonance imaging (MRI) for real-time guidance during radiotherapy is an active area of research and development. One aspect of the problem is the influence of the MRI scanner, modeled here as an external magnetic field, on the medical linear accelerator (linac) components. The present work characterizes the behavior of two medical linac electron guns with external magnetic fields for in-line and perpendicular orientations of the linac with respect to the MRI scanner. Two electron guns, Litton L-2087 and Varian VTC6364, are considered as representative models for this study. Emphasis was placed on the in-line design approach in which case the MRI scanner and the linac axes of symmetry coincide and assumes no magnetic shielding of the linac. For the in-line case, the magnetic field from a 0.5 T open MRI (GE Signa SP) magnet with a 60 cm gap between its poles was computed and used in full three dimensional (3D) space charge simulations, whereas for the perpendicular case the magnetic field was constant. For the in-line configuration, it is shown that the electron beam is not deflected from the axis of symmetry of the gun and the primary beam current does not vanish even at very high values of the magnetic field, e.g., 0.16 T. As the field strength increases, the primary beam current has an initial plateau of constant value after which its value decreases to a minimum corresponding to a field strength of approximately 0.06 T. After the minimum is reached, the current starts to increase slowly. For the case when the beam current computation is performed at the beam waist position the initial plateau ends at 0.016 T for Litton L-2087 and at 0.012 T for Varian VTC6364. The minimum value of the primary beam current is 27.5% of the initial value for Litton L-2087 and 22.9% of the initial value for Varian VTC6364. The minimum current is reached at 0.06 and 0.062 T for Litton L-2087 and Varian VTC6364, respectively. At 0.16 T the beam current increases to 40.2 and 31.4% from the original value of the current for Litton L-2087 and Varian VTC6364, respectively. In contrast, for the case when the electron gun is perpendicular to the magnetic field, the electron beam is deflected from the axis of symmetry even at small values of the magnetic field. As the strength of the magnetic field increases, so does the beam deflection, leading to a sharp decrease of the primary beam current which vanishes at about 0.007 T for Litton L-2087 and at 0.006 T for Varian VTC6364, respectively. At zero external field, the beam rms emittance computed at beam waist is 1.54 and 1.29n-mm-mrad for Litton L-2087 and Varian VTC6364, respectively. For the inline configuration, there are two particular values of the external field where the beam rms emittance reaches a minimum. Litton L-2087 rms emittance reaches a minimum of 0.72n and 2.01 n-mm-mrad at 0.026 and 0.132 T, respectively. Varian VTC6364 rms emittance reaches a minimum of 0.34n and 0.35n-mm-mrad at 0.028 and 0.14 T, respectively. Beam radius dependence on the external field is shown for the in-line configuration for both electron guns. 3D space charge simulation of two electron guns, Litton L-2087 and Varian VTC6364, were performed for in-line and perpendicular external magnetic fields. A consistent behavior of Pierce guns in external magnetic fields was proven. For the in-line configuration, the primary beam current does not vanish but a large reduction of beam current (up to 77.1%) is observed at higher field strengths; the beam directionality remains unchanged. It was shown that for a perpendicular configuration the current vanishes due to beam bending under the action of the Lorentz force. For in-line configuration it was determined that the rms beam emittance reaches two minima for relatively high values of the external magnetic field.

A study of the effect of in-line and perpendicular magnetic fields on beam characteristics of electron guns in medical linear accelerators

PubMed Central

Constantin, Dragoş E.; Fahrig, Rebecca; Keall, Paul J.

2011-01-01

Purpose: Using magnetic resonance imaging (MRI) for real-time guidance during radiotherapy is an active area of research and development. One aspect of the problem is the influence of the MRI scanner, modeled here as an external magnetic field, on the medical linear accelerator (linac) components. The present work characterizes the behavior of two medical linac electron guns with external magnetic fields for in-line and perpendicular orientations of the linac with respect to the MRI scanner. Methods: Two electron guns, Litton L-2087 and Varian VTC6364, are considered as representative models for this study. Emphasis was placed on the in-line design approach in which case the MRI scanner and the linac axes of symmetry coincide and assumes no magnetic shielding of the linac. For the in-line case, the magnetic field from a 0.5 T open MRI (GE Signa SP) magnet with a 60 cm gap between its poles was computed and used in full three dimensional (3D) space charge simulations, whereas for the perpendicular case the magnetic field was constant. Results: For the in-line configuration, it is shown that the electron beam is not deflected from the axis of symmetry of the gun and the primary beam current does not vanish even at very high values of the magnetic field, e.g., 0.16 T. As the field strength increases, the primary beam current has an initial plateau of constant value after which its value decreases to a minimum corresponding to a field strength of approximately 0.06 T. After the minimum is reached, the current starts to increase slowly. For the case when the beam current computation is performed at the beam waist position the initial plateau ends at 0.016 T for Litton L-2087 and at 0.012 T for Varian VTC6364. The minimum value of the primary beam current is 27.5% of the initial value for Litton L-2087 and 22.9% of the initial value for Varian VTC6364. The minimum current is reached at 0.06 and 0.062 T for Litton L-2087 and Varian VTC6364, respectively. At 0.16 T the beam current increases to 40.2 and 31.4% from the original value of the current for Litton L-2087 and Varian VTC6364, respectively. In contrast, for the case when the electron gun is perpendicular to the magnetic field, the electron beam is deflected from the axis of symmetry even at small values of the magnetic field. As the strength of the magnetic field increases, so does the beam deflection, leading to a sharp decrease of the primary beam current which vanishes at about 0.007 T for Litton L-2087 and at 0.006 T for Varian VTC6364, respectively. At zero external field, the beam rms emittance computed at beam waist is 1.54 and 1.29π-mm-mrad for Litton L-2087 and Varian VTC6364, respectively. For the in-line configuration, there are two particular values of the external field where the beam rms emittance reaches a minimum. Litton L-2087 rms emittance reaches a minimum of 0.72π and 2.01π-mm-mrad at 0.026 and 0.132 T, respectively. Varian VTC6364 rms emittance reaches a minimum of 0.34π and 0.35π-mm-mrad at 0.028 and 0.14 T, respectively. Beam radius dependence on the external field is shown for the in-line configuration for both electron guns. Conclusions: 3D space charge simulation of two electron guns, Litton L-2087 and Varian VTC6364, were performed for in-line and perpendicular external magnetic fields. A consistent behavior of Pierce guns in external magnetic fields was proven. For the in-line configuration, the primary beam current does not vanish but a large reduction of beam current (up to 77.1%) is observed at higher field strengths; the beam directionality remains unchanged. It was shown that for a perpendicular configuration the current vanishes due to beam bending under the action of the Lorentz force. For in-line configuration it was determined that the rms beam emittance reaches two minima for relatively high values of the external magnetic field. PMID:21859019

Quantifying, Assessing, and Mitigating Methane Emissions from Super-emitters in the Oil and Gas Supply Chain

NASA Astrophysics Data System (ADS)

Lyon, David Richard

Methane emissions from the oil and gas (O&G) supply chain reduce potential climate benefits of natural gas as a replacement for other fossil fuels that emit more carbon dioxide per energy produced. O&G facilities have skewed emission rate distributions with a small fraction of sites contributing the majority of emissions. Knowledge of the identity and cause of these high emission facilities, referred to as super-emitters or fat-tail sources, is critical for reducing supply chain emissions. This dissertation addresses the quantification of super-emitter emissions, assessment of their prevalence and relationship to site characteristics, and mitigation with continuous leak detection systems. Chapter 1 summarizes the state of the knowledge of O&G methane emissions. Chapter 2 constructs a spatially-resolved emission inventory to estimate total and O&G methane emissions in the Barnett Shale as part of a coordinated research campaign using multiple top-down and bottom-up methods to quantify emissions. The emission inventory accounts for super-emitters with two-phase Monte Carlo simulations that combine site measurements collected with two approaches: unbiased sampling and targeted sampling of super-emitters. More comprehensive activity data and the inclusion of super-emitters, which account for 19% of O&G emissions, produces a emission inventory that is not statistically different than top-down regional emission estimates. Chapter 3 describes a helicopter-based survey of over 8,000 well pads in seven basins with infrared optical gas imaging to assess high emission sources. Four percent of sites are observed to have high emissions with over 90% of observed sources from tanks. The occurrence of high emissions is weakly correlated to site parameters and the best statistical model explains only 14% of variance, which demonstrates that the occurrence of super-emitters is primarily stochastic. Chapter 4 presents a Gaussian dispersion model for optimizing the placement of continuous leak detection systems at three example well pads. The model demonstrates that large leaks can be detected quickly with first generation systems. Continuous leak detection can be used in the near future to cost-effectively mitigate methane emissions from O&G super-emitters.

Silicon Carbide Emitter Turn-Off Thyristor

DOE PAGES

Wang, Jun; Wang, Gangyao; Li, Jun; ...

2008-01-01

A novel MOS-conmore » trolled SiC thyristor device, the SiC emitter turn-off thyristor (ETO) is a promising technology for future high-voltage switching applications because it integrates the excellent current conduction capability of a SiC thyristor with a simple MOS-control interface. Through unity-gain turn-off, the SiC ETO also achieves excellent Safe Operation Area (SOA) and faster switching speeds than silicon ETOs. The world's first 4.5-kV SiC ETO prototype shows a forward voltage drop of 4.26 V at 26.5  A / cm 2 current density at room and elevated temperatures. Tested in an inductive circuit with a 2.5 kV DC link voltage and a 9.56-A load current, the SiC ETO shows a fast turn-off time of 1.63 microseconds and a low 9.88 mJ turn-off energy. The low switching loss indicates that the SiC ETO could operate at about 4 kHz if 100  W / cm 2 conduction and the 100  W / cm 2 turn-off losses can be removed by the thermal management system. This frequency capability is about 4 times higher than 4.5-kV-class silicon power devices. The preliminary demonstration shows that the SiC ETO is a promising candidate for high-frequency, high-voltage power conversion applications, and additional developments to optimize the device for higher voltage (>5 kV) and higher frequency (10 kHz) are needed.« less

Robust, easily shaped, and epoxy-free carbon-fiber-aluminum cathodes for generating high-current electron beams.

PubMed

Liu, Lie; Li, Limin; Wen, Jianchun; Wan, Hong

2009-02-01

This paper presents the construction of carbon-fiber-aluminum (CFA) cathode by squeezing casting and its applications for generating high-current electron beams to drive high-power microwave sources. The fabrication process avoided using epoxy, a volatile deteriorating the vacuum system. These cathodes had a higher hardness than conventional aluminum, facilitating machining. After surface treatment, carbon fibers became the dominator determining emission property. A multineedle CFA cathode was utilized in a triode virtual cathode oscillator (vircator), powered by a approximately 450 kV, approximately 400 ns pulse. It was found that 300-400 MW, approximately 250 ns microwave was radiated at a dominant frequency of 2.6 GHz. Further, this cathode can endure high-current-density emission without detectable degradation in performance as the pulse shot proceeded, showing the robust nature of carbon fibers as explosive emitters. Overall, this new class of cold cathodes offers a potential prospect of developing high-current electron beam sources.

Electromagnetic and geometric characterization of accelerated ion beams by laser ablation

NASA Astrophysics Data System (ADS)

Nassisi, V.; Velardi, L.; Side, D. Delle

2013-05-01

Laser ion sources offer the possibility to get ion beam useful to improve particle accelerators. Pulsed lasers at intensities of the order of 108 W/cm2 and of ns pulse duration, interacting with solid matter in vacuum, produce plasma of high temperature and density. The charge state distribution of the plasma generates high electric fields which accelerate ions along the normal to the target surface. The energy of emitted ions has a Maxwell-Boltzmann distribution which depends on the ion charge state. To increase the ion energy, a post-acceleration system can be employed by means of high voltage power supplies of about 100 kV. The post acceleration system results to be a good method to obtain high ion currents by a not expensive system and the final ion beams find interesting applications in the field of the ion implantation, scientific applications and industrial use. In this work we compare the electromagnetic and geometric properties, like emittance, of the beams delivered by pure Cu, Y and Ag targets. The characterization of the plasma was performed by a Faraday cup for the electromagnetic characteristics, whereas a pepper pot system was used for the geometric ones. At 60 kV accelerating voltage the three examined ion bunches get a current peak of 5.5, 7.3 and 15 mA, with a normalized beam emittance of 0.22, 0.12 and 0.09 π mm mrad for the targets of Cu, Y, and Ag, respectively.

Thermoreflectance microscopy measurements of the Joule heating characteristics of high- Tc superconducting terahertz emitters

NASA Astrophysics Data System (ADS)

Kashiwagi, Takanari; Tanaka, Taiga; Watanabe, Chiharu; Kubo, Hiroyuki; Komori, Yuki; Yuasa, Takumi; Tanabe, Yuki; Ota, Ryusei; Kuwano, Genki; Nakamura, Kento; Tsujimoto, Manabu; Minami, Hidetoshi; Yamamoto, Takashi; Klemm, Richard A.; Kadowaki, Kazuo

2017-12-01

Joule heating is the central issue in order to develop high-power and high-performance terahertz (THz) emission from mesa devices employing the intrinsic Josephson junctions in a layered high transition-temperature Tc superconductor. Here, we describe a convenient local thermal measurement technique using charge-coupled-device-based thermoreflectance microscopy, with the highest spatial resolution to date. This technique clearly proves that the relative temperature changes of the mesa devices between different bias points on the current-voltage characteristics can be measured very sensitively. In addition, the heating characteristics on the surface of the mesa devices can be detected more directly without any special treatment of the mesa surface such as previous coatings with SiC micro-powders. The results shown here clearly indicate that the contact resistance strongly affects the formation of an inhomogeneous temperature distribution on the mesa structures. Since the temperature and sample dependencies of the Joule heating characteristics can be measured quickly, this simple thermal evaluation technique is a useful tool to check the quality of the electrical contacts, electrical wiring, and sample defects. Thus, this technique could help to reduce the heating problems and to improve the performance of superconducting THz emitter devices.

Final 6D Muon Ionization Colling using Strong Focusing Quadrupoles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hart, T. L.; Acosta, J. G.; Cremaldi, L. M.

2016-11-15

Abstract Low emittance muon beam lines and muon colliders are potentially a rich source of BSM physics for future exper- imenters. A muon beam normalized emittance of ax,y,z = (280, 280, 1570)µm has been achieved in simulation with short solenoids and a betatron function of 3 cm. Here we use ICOOL and MAD-X to explore using a 400 MeV/c muon beam and strong focusing quadrupoles to achieve a normalized transverse emittance of 100 µm and complete 6D cooling. The low beta regions, as low as 5 mm, produced by the quadrupoles are occupied by dense, low Z absorbers, such asmore » lithium hydride or beryllium, that cool the beam transversely. Equilibrium transverse emittance is linearly proportional to the transverse betatron function. Reverse emittance exchange with septa and/or wedges is then used to decrease transverse emittance from 100 to 25 µm at the expense of longitudinal emittance for a high energy lepton collider. Cooling challenges include chromaticity correction, ssband overlap, quadrupole acceptance, and staying in phase with RF.« less

LC-oscillator with automatic stabilized amplitude via bias current control. [power supply circuit for transducers

NASA Technical Reports Server (NTRS)

Hamlet, J. F. (Inventor)

1974-01-01

A stable excitation supply for measurement transducers is described. It consists of a single-transistor oscillator with a coil connected to the collector and a capacitor connected from the collector to the emitter. The output of the oscillator is rectified and the rectified signal acts as one input to a differential amplifier; the other input being a reference potential. The output of the amplifier is connected at a point between the emitter of the transistor and ground. When the rectified signal is greater than the reference signal, the differential amplifier produces a signal of polarity to reduce bias current and, consequently, amplification.

Emitter/absorber interface of CdTe solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Tao, E-mail: tsong241@gmail.com; Sites, James R.; Kanevce, Ana

The performance of CdTe solar cells can be very sensitive to the emitter/absorber interface, especially for high-efficiency cells with high bulk lifetime. Performance losses from acceptor-type interface defects can be significant when interface defect states are located near mid-gap energies. Numerical simulations show that the emitter/absorber band alignment, the emitter doping and thickness, and the defect properties of the interface (i.e., defect density, defect type, and defect energy) can all play significant roles in the interface recombination. In particular, a type I heterojunction with small conduction-band offset (0.1 eV ≤ ΔE{sub C} ≤ 0.3 eV) can help maintain good cell efficiency in spite of high interfacemore » defect density, much like with Cu(In,Ga)Se{sub 2} (CIGS) cells. The basic principle is that positive ΔE{sub C}, often referred to as a “spike,” creates an absorber inversion and hence a large hole barrier adjacent to the interface. As a result, the electron-hole recombination is suppressed due to an insufficient hole supply at the interface. A large spike (ΔE{sub C} ≥ 0.4 eV), however, can impede electron transport and lead to a reduction of photocurrent and fill-factor. In contrast to the spike, a “cliff” (ΔE{sub C} < 0 eV) allows high hole concentration in the vicinity of the interface, which will assist interface recombination and result in a reduced open-circuit voltage. Another way to mitigate performance losses due to interface defects is to use a thin and highly doped emitter, which can invert the absorber and form a large hole barrier at the interface. CdS is the most common emitter material used in CdTe solar cells, but the CdS/CdTe interface is in the cliff category and is not favorable from the band-offset perspective. The ΔE{sub C} of other n-type emitter choices, such as (Mg,Zn)O, Cd(S,O), or (Cd,Mg)Te, can be tuned by varying the elemental ratio for an optimal positive value of ΔE{sub C}. These materials are predicted to yield higher voltages and would therefore be better candidates for the CdTe-cell emitter.« less

Target tracking and pointing for arrays of phase-locked lasers

NASA Astrophysics Data System (ADS)

Macasaet, Van P.; Hughes, Gary B.; Lubin, Philip; Madajian, Jonathan; Zhang, Qicheng; Griswold, Janelle; Kulkarni, Neeraj; Cohen, Alexander; Brashears, Travis

2016-09-01

Arrays of phase-locked lasers are envisioned for planetary defense and exploration systems. High-energy beams focused on a threatening asteroid evaporate surface material, creating a reactionary thrust that alters the asteroid's orbit. The same system could be used to probe an asteroid's composition, to search for unknown asteroids, and to propel interplanetary and interstellar spacecraft. Phased-array designs are capable of producing high beam intensity, and allow beam steering and beam profile manipulation. Modular designs allow ongoing addition of emitter elements to a growing array. This paper discusses pointing control for extensible laser arrays. Rough pointing is determined by spacecraft attitude control. Lateral movement of the laser emitter tips behind the optical elements provides intermediate pointing adjustment for individual array elements and beam steering. Precision beam steering and beam formation is accomplished by coordinated phase modulation across the array. Added cells are incorporated into the phase control scheme by precise alignment to local mechanical datums using fast, optical relative position sensors. Infrared target sensors are also positioned within the datum scheme, and provide information about the target vector relative to datum coordinates at each emitter. Multiple target sensors allow refined determination of the target normal plane, providing information to the phase controller for each emitter. As emitters and sensors are added, local position data allows accurate prediction of the relative global position of emitters across the array, providing additional constraints to the phase controllers. Mechanical design and associated phase control that is scalable for target distance and number of emitters is presented.

Reliability study of high-brightness multiple single emitter diode lasers

NASA Astrophysics Data System (ADS)

Zhu, Jing; Yang, Thomas; Zhang, Cuipeng; Lang, Chao; Jiang, Xiaochen; Liu, Rui; Gao, Yanyan; Guo, Weirong; Jiang, Yuhua; Liu, Yang; Zhang, Luyan; Chen, Louisa

2015-03-01

In this study the chip bonding processes for various chips from various chip suppliers around the world have been optimized to achieve reliable chip on sub-mount for high performance. These chip on sub-mounts, for examples, includes three types of bonding, 8xx nm-1.2W/10.0W Indium bonded lasers, 9xx nm 10W-20W AuSn bonded lasers and 1470 nm 6W Indium bonded lasers will be reported below. The MTTF@25 of 9xx nm chip on sub-mount (COS) is calculated to be more than 203,896 hours. These chips from various chip suppliers are packaged into many multiple single emitter laser modules, using similar packaging techniques from 2 emitters per module to up to 7 emitters per module. A reliability study including aging test is performed on those multiple single emitter laser modules. With research team's 12 years' experienced packaging design and techniques, precise optical and fiber alignment processes and superior chip bonding capability, we have achieved a total MTTF exceeding 177,710 hours of life time with 60% confidence level for those multiple single emitter laser modules. Furthermore, a separated reliability study on wavelength stabilized laser modules have shown this wavelength stabilized module packaging process is reliable as well.

On the application of quantum transport theory to electron sources.

PubMed

Jensen, Kevin L

2003-01-01

Electron sources (e.g., field emitter arrays, wide band-gap (WBG) semiconductor materials and coatings, carbon nanotubes, etc.) seek to exploit ballistic transport within the vacuum after emission from microfabricated structures. Regardless of kind, all sources strive to minimize the barrier to electron emission by engineering material properties (work function/electron affinity) or physical geometry (field enhancement) of the cathode. The unique capabilities of cold cathodes, such as instant ON/OFF performance, high brightness, high current density, large transconductance to capacitance ratio, cold emission, small size and/or low voltage operation characteristics, commend their use in several advanced devices when physical size, weight, power consumption, beam current, and pulse repletion frequency are important, e.g., RF power amplifier such as traveling wave tubes (TWTs) for radar and communications, electrodynamic tethers for satellite deboost/reboost, and electric propulsion systems such as Hall thrusters for small satellites. The theoretical program described herein is directed towards models to evaluate emission current from electron sources (in particular, emission from WBG and Spindt-type field emitter) in order to assess their utility, capabilities and performance characteristics. Modeling efforts particularly include: band bending, non-linear and resonant (Poole-Frenkel) potentials, the extension of one-dimensional theory to multi-dimensional structures, and emission site statistics due to variations in geometry and the presence of adsorbates. Two particular methodologies, namely, the modified Airy approach and metal-semiconductor statistical hyperbolic/ellipsoidal model, are described in detail in their present stage of development.

Engineering and Localization of Quantum Emitters in Large Hexagonal Boron Nitride Layers.

PubMed

Choi, Sumin; Tran, Toan Trong; Elbadawi, Christopher; Lobo, Charlene; Wang, Xuewen; Juodkazis, Saulius; Seniutinas, Gediminas; Toth, Milos; Aharonovich, Igor

2016-11-02

Hexagonal boron nitride is a wide-band-gap van der Waals material that has recently emerged as a promising platform for quantum photonics experiments. In this work, we study the formation and localization of narrowband quantum emitters in large flakes (up to tens of micrometers wide) of hexagonal boron nitride. The emitters can be activated in as-grown hexagonal boron nitride by electron irradiation or high-temperature annealing, and the emitter formation probability can be increased by ion implantation or focused laser irradiation of the as-grown material. Interestingly, we show that the emitters are always localized at the edges of the flakes, unlike most luminescent point defects in three-dimensional materials. Our results constitute an important step on the roadmap of deploying hexagonal boron nitride in nanophotonics applications.

Carbon nanotube emitters and field emission triode

NASA Astrophysics Data System (ADS)

Fan, Zhiqin; Zhang, Binglin; Yao, Ning; Zhang, Lan; Ma, Huizhong; Deng, Jicai

2006-05-01

Based on our study on field emission from multi-walled carbon nanotubes (MWNTs), we experimentally manufactured field emission display (FED) triode with a MWNTs cold cathode, and demonstrated an excellent performance of MWNTs as field emitters. The measured luminance of the phosphor screens was 1.8*10^(3) cd/m2 for green light. The emission is stable with a fluctuation of only 1.5% at an average current of 260 'mu'A.

Flat panel ferroelectric electron emission display system

DOEpatents

Sampayan, Stephen E.; Orvis, William J.; Caporaso, George J.; Wieskamp, Ted F.

1996-01-01

A device which can produce a bright, raster scanned or non-raster scanned image from a flat panel. Unlike many flat panel technologies, this device does not require ambient light or auxiliary illumination for viewing the image. Rather, this device relies on electrons emitted from a ferroelectric emitter impinging on a phosphor. This device takes advantage of a new electron emitter technology which emits electrons with significant kinetic energy and beam current density.

Note: A pulsed laser ion source for linear induction accelerators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, H., E-mail: bamboobbu@hotmail.com; School of Physics, Peking University, Beijing 100871; Zhang, K.

2015-01-15

We have developed a high-current laser ion source for induction accelerators. A copper target was irradiated by a frequency-quadrupled Nd:YAG laser (266 nm) with relatively low intensities of 10{sup 8} W/cm{sup 2}. The laser-produced plasma supplied a large number of Cu{sup +} ions (∼10{sup 12} ions/pulse) during several microseconds. Emission spectra of the plasma were observed and the calculated electron temperature was about 1 eV. An induction voltage adder extracted high-current ion beams over 0.5 A/cm{sup 2} from a plasma-prefilled gap. The normalized beam emittance measured by a pepper-pot method was smaller than 1 π mm mrad.

High efficiency incandescent lighting

DOEpatents

Bermel, Peter; Ilic, Ognjen; Chan, Walker R.; Musabeyoglu, Ahmet; Cukierman, Aviv Ruben; Harradon, Michael Robert; Celanovic, Ivan; Soljacic, Marin

2014-09-02

Incandescent lighting structure. The structure includes a thermal emitter that can, but does not have to, include a first photonic crystal on its surface to tailor thermal emission coupled to, in a high-view-factor geometry, a second photonic filter selected to reflect infrared radiation back to the emitter while passing visible light. This structure is highly efficient as compared to standard incandescent light bulbs.

Field ion microscopic studies of the CO oxidation on platinum: Bistability and oscillations

NASA Astrophysics Data System (ADS)

Gorodetskii, V.; Drachsel, W.; Ehsasi, M.; Block, J. H.

1994-05-01

The oscillating CO oxidation is investigated on a Pt-field emitter tip by using the field ion mode of surface imaging of Oad sites with O2 as imaging gas. Based on data of the titration reactions [V. Gorodetskii, W. Drachsel, and J. H. Block, J. Chem. Phys. 100, C. E. UPDATE (1994)], external control parameters for the regions of bistability and of self-sustained isothermal oscillations could be found. On a field emitter tip, oscillations can be generated in a rather large parameter space. The anticlockwise hysteresis of O+2 ion currents in temperature cycles occurs in agreement with results on single crystal planes. Unexpected regular oscillation sequences could occasionally be obtained on the small surface areas of a field emitter tip and measured as function of the CO partial pressure and of the temperature. Different stages within oscillating cycles were documented by field ion images. Oscillations of total ion currents are correlated with variations in the spatial brightness of field ion images. In the manifold of single crystal planes of a field emitter {331} planes around the {011} regions are starting points for oscillations which mainly proceed along [100] vicinals. This excludes the {111} regions from autonomous oscillations. With slightly increased CO partial pressures fast local oscillations at a few hundred surface sites of the Pt(001) plane display short-living CO islands of 40 to 50 Å diameter. Temporal oscillations of the total O+2 ion current are mainly caused by surface plane specific spatial oscillations. The synchronization is achieved by diffusion reaction fronts rather than by gas phase synchronization.

New Molecular Design Concurrently Providing Superior Pure Blue, Thermally Activated Delayed Fluorescence and Optical Out-Coupling Efficiencies.

PubMed

Rajamalli, P; Senthilkumar, N; Huang, P-Y; Ren-Wu, C-C; Lin, H-W; Cheng, C-H

2017-08-16

Simultaneous enhancement of out-coupling efficiency, internal quantum efficiency, and color purity in thermally activated delayed fluorescence (TADF) emitters is highly desired for the practical application of these materials. We designed and synthesized two isomeric TADF emitters, 2DPyM-mDTC and 3DPyM-pDTC, based on di(pyridinyl)methanone (DPyM) cores as the new electron-accepting units and di(tert-butyl)carbazole (DTC) as the electron-donating units. 3DPyM-pDTC, which is structurally nearly planar with a very small ΔE ST , shows higher color purity, horizontal ratio, and quantum yield than 2DPyM-mDTC, which has a more flexible structure. An electroluminescence device based on 3DPyM-pDTC as the dopant emitter can reach an extremely high external quantum efficiency of 31.9% with a pure blue emission. This work also demonstrates a way to design materials with a high portion of horizontal molecular orientation to realize a highly efficient pure-blue device based on TADF emitters.

Direct Electricity from Heat: A Solution to Assist Aircraft Power Demands

NASA Technical Reports Server (NTRS)

Goldsby, Jon C.

2010-01-01

A thermionic device produces an electrical current with the application of a thermal gradient whereby the temperature at one electrode provides enough thermal energy to eject electrons. The system is totally predicated on the thermal gradient and the work function of the electrode collector relative to the emitter electrode. Combined with a standard thermoelectric device high efficiencies may result, capable of providing electrical energy from the waste heat of gas turbine engines.

Emission enhancement, light extraction and carrier dynamics in InGaAs/GaAs nanowire arrays

NASA Astrophysics Data System (ADS)

Kivisaari, Pyry; Chen, Yang; Anttu, Nicklas

2018-03-01

Nanowires (NWs) have the potential for a wide range of new optoelectronic applications. For example, light-emitting diodes that span over the whole visible spectrum are currently being developed from NWs to overcome the well known green gap problem. However, due to their small size, NW devices exhibit special properties that complicate their analysis, characterization, and further development. In this paper, we develop a full optoelectronic simulation tool for NW array light emitters accounting for carrier transport and wave-optical emission enhancement (EE), and we use the model to simulate InGaAs/GaAs NW array light emitters with different geometries and temperatures. Our results show that NW arrays emit light preferentially to certain angles depending on the NW diameter and temperature, encouraging temperature- and angle-resolved measurements of NW array light emission. On the other hand, based on our results both the EE and light extraction efficiency can easily change by at least a factor of two between room temperature and 77 K, complicating the characterization of NW light emitters if conventional methods are used. Finally, simulations accounting for surface recombination emphasize its major effect on the device performance. For example, a surface recombination velocity of 104 cm s-1 reported earlier for bare InGaAs surfaces results in internal quantum efficiencies less than 30% for small-diameter NWs even at the temperature of 30 K. This highlights that core-shell structures or high-quality passivation techniques are eventually needed to achieve efficient NW-based light emitters.

High current polarized electron source

NASA Astrophysics Data System (ADS)

Suleiman, R.; Adderley, P.; Grames, J.; Hansknecht, J.; Poelker, M.; Stutzman, M.

2018-05-01

Jefferson Lab operates two DC high voltage GaAs photoguns with compact inverted insulators. One photogun provides the polarized electron beam at the Continuous Electron Beam Accelerator Facility (CEBAF) up to 200 µA. The other gun is used for high average current photocathode lifetime studies at a dedicated test facility up to 4 mA of polarized beam and 10 mA of un-polarized beam. GaAs-based photoguns used at accelerators with extensive user programs must exhibit long photocathode operating lifetime. Achieving this goal represents a significant challenge for proposed facilities that must operate in excess of tens of mA of polarized average current. This contribution describes techniques to maintain good vacuum while delivering high beam currents, and techniques that minimize damage due to ion bombardment, the dominant mechanism that reduces photocathode yield. Advantages of higher DC voltage include reduced space-charge emittance growth and the potential for better photocathode lifetime. Highlights of R&D to improve the performance of polarized electron sources and prolong the lifetime of strained-superlattice GaAs are presented.

The Effect of Martian Dust on Radiator Performance

NASA Technical Reports Server (NTRS)

Hollingsworth, D. Keith; Witte, Larry C.; Hinke, Jaime; Hulbert, Kathryn

2004-01-01

Experiments were performed in which the effective emittance of three types of radiator Coatings was measured as Martian dust simulant was added to the radiator face. The apparatus consisted of multiple radiator coupons on which Carbondale Red Clay dust was deposited. The coupons were powered by electric heaters, using a guard-heating configuration to achieve the accuracy required for acceptable emittance calculations. The apparatus was containing in a vacuum chamber that featured a liquid-nitrogen cooled shroud that simulated the Martian sky temperature. Radiator temperatures ranged from 250 to 350 K with sky temperatures from 185 to 248 K. Results show that as dust was added to the radiator surfaces, the effective emittance of the high - emittance coatings decreased from near 0.9 to a value of about 0.5. A low-emittance control surface, polished aluminum, demonstrated a rise in effective emittance for thin dust layers, and then a decline as the dust layer thickened. This behavior is attributed to the conductive resistance caused by the dust layer.

A resonance-free nano-film airborne ultrasound emitter

NASA Astrophysics Data System (ADS)

Daschewski, Maxim; Harrer, Andrea; Prager, Jens; Kreutzbruck, Marc; Beck, Uwe; Lange, Thorid; Weise, Matthias

2013-01-01

In this contribution we present a novel thermo-acoustic approach for the generation of broad band airborne ultrasound and investigate the applicability of resonance-free thermo-acoustic emitters for very short high pressure airborne ultrasound pulses. We report on measurements of thermo-acoustic emitter consisting of a 30 nm thin metallic film on a usual soda-lime glass substrate, generating sound pressure values of more than 140 dB at 60 mm distance from the transducer and compare the results with conventional piezoelectric airborne ultrasound transducers. Our experimental investigations show that such thermo-acoustic devices can be used as broad band emitters using pulse excitation.

Emittance Growth in the DARHT-II Linear Induction Accelerator

NASA Astrophysics Data System (ADS)

Ekdahl, Carl; Carlson, Carl A.; Frayer, Daniel K.; McCuistian, B. Trent; Mostrom, Christopher B.; Schulze, Martin E.; Thoma, Carsten H.

2017-11-01

The Dual-Axis Radiographic Hydrotest (DARHT) facility uses bremsstrahlung radiation source spots produced by the focused electron beams from two linear induction accelerators (LIAs) to radiograph large hydrodynamic experiments driven by high explosives. Radiographic resolution is determined by the size of the source spot, and beam emittance is the ultimate limitation to spot size. Some of the possible causes for the emittance growth in the DARHT LIA have been investigated using particle-in-cell (PIC) codes, and are discussed in this article. The results suggest that the most likely source of emittance growth is a mismatch of the beam to the magnetic transport, which can cause beam halo.

Online clustering algorithms for radar emitter classification.

PubMed

Liu, Jun; Lee, Jim P Y; Senior; Li, Lingjie; Luo, Zhi-Quan; Wong, K Max

2005-08-01

Radar emitter classification is a special application of data clustering for classifying unknown radar emitters from received radar pulse samples. The main challenges of this task are the high dimensionality of radar pulse samples, small sample group size, and closely located radar pulse clusters. In this paper, two new online clustering algorithms are developed for radar emitter classification: One is model-based using the Minimum Description Length (MDL) criterion and the other is based on competitive learning. Computational complexity is analyzed for each algorithm and then compared. Simulation results show the superior performance of the model-based algorithm over competitive learning in terms of better classification accuracy, flexibility, and stability.

Determination of beta emitters ( 90Sr, 14C and 3H) in routine measurements using plastic scintillation beads

NASA Astrophysics Data System (ADS)

Tarancón, A.; García, J. F.; Rauret, G.

2004-01-01

Plastic scintillation has recently been shown to be a powerful alternative to liquid scintillation and Cherenkov techniques in radionuclide determination due to the good values obtained for the measurement parameters and the low amount of wastes generated. The present study evaluated the capability of plastic scintillation beads and polyethylene vials for routine measurements of beta emitters ( 90Sr, 14C, 3H). Results show that high- and medium-energetic beta emitters can be quantified with relative errors less than 5% in low-activity aqueous samples, whereas low-energetic beta emitters can only be quantified in medium-activity samples.

Connecting blazars with ultrahigh-energy cosmic rays and astrophysical neutrinos

NASA Astrophysics Data System (ADS)

Resconi, E.; Coenders, S.; Padovani, P.; Giommi, P.; Caccianiga, L.

2017-06-01

We present a strong hint of a connection between high-energy γ-ray emitting blazars, very high energy neutrinos, and ultrahigh-energy cosmic rays. We first identify potential hadronic sources by filtering γ-ray emitters in spatial coincidence with the high-energy neutrinos detected by IceCube. The neutrino filtered γ-ray emitters are then correlated with the ultrahigh-energy cosmic rays from the Pierre Auger Observatory and the Telescope Array by scanning in γ-ray flux (Fγ) and angular separation (θ) between sources and cosmic rays. A maximal excess of 80 cosmic rays (42.5 expected) is found at θ ≤ 10° from the neutrino-filtered γ-ray emitters selected from the second hard Fermi-LAT catalogue (2FHL) and for Fγ(>50 GeV) ≥ 1.8 × 10-11 ph cm-2 s-1. The probability for this to happen is 2.4 × 10-5, which translates to ˜2.4 × 10-3 after compensation for all the considered trials. No excess of cosmic rays is instead observed for the complement sample of γ-ray emitters (I.e. not in spatial connection with IceCube neutrinos). A likelihood ratio test comparing the connection between the neutrino-filtered and the complement source samples with the cosmic rays favours a connection between neutrino-filtered emitters and cosmic rays with a probability of ˜1.8 × 10-3 (2.9σ) after compensation for all the considered trials. The neutrino-filtered γ-ray sources that make up the cosmic rays excess are blazars of the high synchrotron peak type. More statistics is needed to further investigate these sources as candidate cosmic ray and neutrino emitters.

Field emitter displays for future avionics applications

NASA Astrophysics Data System (ADS)

Jones, Susan K.; Jones, Gary W.; Zimmerman, Steven M.; Blazejewski, Edward R.

1995-06-01

Field emitter array-based display technology offers CRT-like characteristics in a thin flat-panel display with many potential applications for vehicle-mounted, crew workstation, and helmet-mounted displays, as well as many other military and commercial applications. In addition to thinness, high brightness, wide viewing angle, wide temperature range, and low weight, field emitter array displays also offer potential advantages such as row-at-a-time matrix addressability and the ability to be segmented.

Bandgap narrowing and emitter efficiency in heavily doped emitter structures revisited

DOE Office of Scientific and Technical Information (OSTI.GOV)

Van Vliet, C.M.

The developments of heavy doping effects and of bandgap narrowing concepts (BGN) during the last two decades are critically discussed. The differences between the real bandgap reduction [Delta]E[sub g] and the apparent electrical bandgap reduction [Delta]G are once more set forth, showing the precise meaning of the density-of-states and degeneracy contributions to [Delta]G. From these concepts, previously elaborated by Marshak and Van Vilet and by Lundstrom et al., the authors indicated before that for negligible recombination the minority-carrier emitter current (J[sub pe]) is given by a Merten-type result. In this paper they show that in the presence of surface andmore » (or) bulk recombination (Auger and SRH) the result of Selvakumar and Roulston is recovered; however, the electrical field in the emitter and the effective intrinsic density of carriers are not those used by these authors but, on the contrary, these quantities are given by the detailed expressions of their previous work.« less

On the Ionization and Ion Transmission Efficiencies of Different ESI-MS Interfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cox, Jonathan T.; Marginean, Ioan; Smith, Richard D.

2014-09-30

It is well known that the achievable sensitivity of electrospray ionization mass spectrometry (ESI-MS) is largely determined by the ionization efficiency in the ESI source and ion transmission efficiency through the ESI-MS interface. In this report we systematically study the ion transmission and ionization efficiencies in different ESI-MS interface configurations. The configurations under investigation include a single emitter/single inlet capillary, single emitter/multi-inlet capillary, and a subambient pressure ionization with nanoelectrospray (SPIN) MS interfaces with a single emitter and an emitter array, respectively. We present an effective method to evaluate the overall ion utilization efficiency of an ESI-MS interface by measuringmore » the total gas phase ion current transmitted through the interface and correlating it to the observed ion abundance measured in the corresponding mass spectrum. Our experimental results suggest that the overall ion utilization efficiency in the SPIN-MS interface configurations is better than that in the inlet capillary based ESI-MS interface configurations.« less

Out-of-core Evaluations of Uranium Nitride-fueled Converters

NASA Technical Reports Server (NTRS)

Shimada, K.

1972-01-01

Two uranium nitride fueled converters were tested parametrically for their initial characterization and are currently being life-tested out of core. Test method being employed for the parametric and the diagnostic measurements during the life tests, and test results are presented. One converter with a rhenium emitter had an initial output power density of 6.9 W/ sq cm at the black body emitter temperature of 1900 K. The power density remained unchanged for the first 1000 hr of life test but degraded nearly 50% percent during the following 1000 hr. Electrode work function measurements indicated that the uranium fuel was diffusing out of the emitter clad of 0.635 mm. The other converter with a tungsten emitter had an initial output power density of 2.2 W/ sq cm at 1900 K with a power density of 3.9 W/sq cm at 4300 h. The power density suddenly degraded within 20 hr to practically zero output at 4735 hr.

Laser ion source for high brightness heavy ion beam

DOE PAGES

Okamura, M.

2016-09-01

A laser ion source is known as a high current high charge state heavy ion source. But, we place great emphasis on the capability to realize a high brightness ion source. A laser ion source has a pinpoint small volume where materials are ionized and can achieve quite uniform low temperature ion beam. Those features may enable us to realize very small emittance beams. Furthermore, a low charge state high brightness laser ion source was successfully commissioned in Brookhaven National Laboratory in 2014. Now most of all the solid based heavy ions are being provided from the laser ion sourcemore » for regular operation.« less

Investigation of effect of solenoid magnet on emittances of ion beam from laser ablation plasma

NASA Astrophysics Data System (ADS)

Ikeda, Shunsuke; Romanelli, Mark; Cinquegrani, David; Sekine, Megumi; Kumaki, Masafumi; Fuwa, Yasuhiro; Kanesue, Takeshi; Okamura, Masahiro; Horioka, Kazuhiko

2014-02-01

A magnetic field can increase an ion current of a laser ablation plasma and is expected to control the change of the plasma ion current. However, the magnetic field can also make some fluctuations of the plasma and the effect on the beam emittance and the emission surface is not clear. To investigate the effect of a magnetic field, we extracted the ion beams under three conditions where without magnetic field, with magnetic field, and without magnetic field with higher laser energy to measure the beam distribution in phase space. Then we compared the relations between the plasma ion current density into the extraction gap and the Twiss parameters with each condition. We observed the effect of the magnetic field on the emission surface.

Investigation of effect of solenoid magnet on emittances of ion beam from laser ablation plasma.

PubMed

Ikeda, Shunsuke; Romanelli, Mark; Cinquegrani, David; Sekine, Megumi; Kumaki, Masafumi; Fuwa, Yasuhiro; Kanesue, Takeshi; Okamura, Masahiro; Horioka, Kazuhiko

2014-02-01

A magnetic field can increase an ion current of a laser ablation plasma and is expected to control the change of the plasma ion current. However, the magnetic field can also make some fluctuations of the plasma and the effect on the beam emittance and the emission surface is not clear. To investigate the effect of a magnetic field, we extracted the ion beams under three conditions where without magnetic field, with magnetic field, and without magnetic field with higher laser energy to measure the beam distribution in phase space. Then we compared the relations between the plasma ion current density into the extraction gap and the Twiss parameters with each condition. We observed the effect of the magnetic field on the emission surface.

The front end test stand high performance H- ion source at Rutherford Appleton Laboratory.

PubMed

Faircloth, D C; Lawrie, S; Letchford, A P; Gabor, C; Wise, P; Whitehead, M; Wood, T; Westall, M; Findlay, D; Perkins, M; Savage, P J; Lee, D A; Pozimski, J K

2010-02-01

The aim of the front end test stand (FETS) project is to demonstrate that chopped low energy beams of high quality can be produced. FETS consists of a 60 mA Penning Surface Plasma Ion Source, a three solenoid low energy beam transport, a 3 MeV radio frequency quadrupole, a chopper, and a comprehensive suite of diagnostics. This paper details the design and initial performance of the ion source and the laser profile measurement system. Beam current, profile, and emittance measurements are shown for different operating conditions.

An MR-compliant phased-array HIFU transducer with augmented steering range, dedicated to abdominal thermotherapy

NASA Astrophysics Data System (ADS)

Auboiroux, Vincent; Dumont, Erik; Petrusca, Lorena; Viallon, Magalie; Salomir, Rares

2011-06-01

A novel architecture for a phased-array high intensity focused ultrasound (HIFU) device was investigated, aiming to increase the capabilities of electronic steering without reducing the size of the elementary emitters. The principal medical application expected to benefit from these developments is the time-effective sonication of large tumours in moving organs. The underlying principle consists of dividing the full array of transducers into multiple sub-arrays of different resonance frequencies, with the reorientation of these individual emitters, such that each sub-array can focus within a given spatial zone. To enable magnetic resonance (MR) compatibility of the device and the number of output channels from the RF generator to be halved, a passive spectral multiplexing technique was used, consisting of parallel wiring of frequency-shifted paired piezoceramic emitters with intrinsic narrow-band response. Two families of 64 emitters (circular, 5 mm diameter) were mounted, with optimum efficiency at 0.96 and 1.03 MHz, respectively. Two different prototypes of the HIFU device were built and tested, each incorporating the same two families of emitters, but differing in the shape of the rapid prototyping plastic support that accommodated the transducers (spherical cap with radius of curvature/aperture of 130 mm/150 mm and, respectively, 80 mm/110 mm). Acoustic measurements, MR-acoustic radiation force imaging (ex vivo) and MR-thermometry (ex vivo and in vivo) were used for the characterization of the prototypes. Experimental results demonstrated an augmentation of the steering range by 80% along one preferentially chosen axis, compared to a classic spherical array of the same total number of elements. The electric power density provided to the piezoceramic transducers exceeded 50 W cm-2 CW, without circulation of coolant water. Another important advantage of the current approach is the versatility of reshaping the array at low cost.

An MR-compliant phased-array HIFU transducer with augmented steering range, dedicated to abdominal thermotherapy.

PubMed

Auboiroux, Vincent; Dumont, Erik; Petrusca, Lorena; Viallon, Magalie; Salomir, Rares

2011-06-21

A novel architecture for a phased-array high intensity focused ultrasound (HIFU) device was investigated, aiming to increase the capabilities of electronic steering without reducing the size of the elementary emitters. The principal medical application expected to benefit from these developments is the time-effective sonication of large tumours in moving organs. The underlying principle consists of dividing the full array of transducers into multiple sub-arrays of different resonance frequencies, with the reorientation of these individual emitters, such that each sub-array can focus within a given spatial zone. To enable magnetic resonance (MR) compatibility of the device and the number of output channels from the RF generator to be halved, a passive spectral multiplexing technique was used, consisting of parallel wiring of frequency-shifted paired piezoceramic emitters with intrinsic narrow-band response. Two families of 64 emitters (circular, 5 mm diameter) were mounted, with optimum efficiency at 0.96 and 1.03 MHz, respectively. Two different prototypes of the HIFU device were built and tested, each incorporating the same two families of emitters, but differing in the shape of the rapid prototyping plastic support that accommodated the transducers (spherical cap with radius of curvature/aperture of 130 mm/150 mm and, respectively, 80 mm/110 mm). Acoustic measurements, MR-acoustic radiation force imaging (ex vivo) and MR-thermometry (ex vivo and in vivo) were used for the characterization of the prototypes. Experimental results demonstrated an augmentation of the steering range by 80% along one preferentially chosen axis, compared to a classic spherical array of the same total number of elements. The electric power density provided to the piezoceramic transducers exceeded 50 W cm(-2) CW, without circulation of coolant water. Another important advantage of the current approach is the versatility of reshaping the array at low cost.

TPV Power Source Using Infrared-Sensitive Cells with Commercially Available Radiant Tube Burner

NASA Astrophysics Data System (ADS)

Fraas, Lewis; Minkin, Leonid; Hui, She; Avery, James; Howells, Christopher

2004-11-01

Over the last several years, JX Crystals has invented and systematically developed the key components for thermophotovoltaic systems. These key components include GaSb infrared sensitive cells, high power density shingle circuits, dielectric filters, and hydrocarbon-fueled radiant tube burners. Most recently, we invented and demonstrated an antireflection (AR)-coated tungsten IR emitter which when integrated with the other key components should make TPV systems with efficiencies over 10% practical. However, the use of the AR tungsten emitter requires an oxygen-free hermetic seal enclosure. During a 2003 Small Business Innovative Research (SBIR) Phase I contract, we integrated a tungsten emitter foil and a commercial SiC radiant tube burner within an emitter thermos and successfully demonstrated its operation at high temperature. We also designed a complete stand alone 500 W TPV generator. During the upcoming SBIR Phase II, we plan to implement this design in hardware.

Parametric emittance measurements of electron beams produced by a laser plasma accelerator

NASA Astrophysics Data System (ADS)

Barber, S. K.; van Tilborg, J.; Schroeder, C. B.; Lehe, R.; Tsai, H.-E.; Swanson, K. K.; Steinke, S.; Nakamura, K.; Geddes, C. G. R.; Benedetti, C.; Esarey, E.; Leemans, W. P.

2018-05-01

Laser plasma accelerators (LPA) offer an exciting possibility to deliver high energy, high brightness electrons beams in drastically smaller distance scales than is typical for conventional accelerators. As such, LPAs draw considerable attention as potential drivers for next generation light sources and for a compact linear collider. In order to asses the viability of an LPA source for a particular application, the brightness of the source should be properly characterized. In this paper, we present charge dependent transverse emittance measurements of LPA sources using both ionization injection and shock induced density down ramp injection, with the latter delivering smaller transverse emittances by a factor of two when controlling for charge density. The single shot emittance method is described in detail with a discussion on limitations related to second order transport effects. The direct role of space charge is explored through a series of simulations and found to be consistent with experimental observations.

Low-temperature THz time domain waveguide spectrometer with butt-coupled emitter and detector crystal.

PubMed

Qiao, W; Stephan, D; Hasselbeck, M; Liang, Q; Dekorsy, T

2012-08-27

A compact high-resolution THz time-domain waveguide spectrometer that is operated inside a cryostat is demonstrated. A THz photo-Dember emitter and a ZnTe electro-optic detection crystal are directly attached to a parallel copper-plate waveguide. This allows the THz beam to be excited and detected entirely inside the cryostat, obviating the need for THz-transparent windows or external THz mirrors. Since no external bias for the emitter is required, no electric feed-through into the cryostat is necessary. Using asynchronous optical sampling, high resolution THz spectra are obtained in the frequency range from 0.2 to 2.0 THz. The THz emission from the photo-Dember emitter and the absorption spectrum of 1,2-dicyanobenzene film are measured as a function of temperature. An absorption peak around 750 GHz of 1,2-dicyanobenzene displays a blue shift with increasing temperature.

Signal coverage approach to the detection probability of hypothetical extraterrestrial emitters in the Milky Way.

PubMed

Grimaldi, Claudio

2017-04-12

The lack of evidence for the existence of extraterrestrial life, even the simplest forms of animal life, makes it is difficult to decide whether the search for extraterrestrial intelligence (SETI) is more a high-risk, high-payoff endeavor than a futile attempt. Here we insist that even if extraterrestrial civilizations do exist and communicate, the likelihood of detecting their signals crucially depends on whether the Earth lies within a region of the galaxy covered by such signals. By considering possible populations of independent emitters in the galaxy, we build a statistical model of the domain covered by hypothetical extraterrestrial signals to derive the detection probability that the Earth is within such a domain. We show that for general distributions of the signal longevity and directionality, the mean number of detectable emitters is less than one even for detection probabilities as large as 50%, regardless of the number of emitters in the galaxy.

Signal coverage approach to the detection probability of hypothetical extraterrestrial emitters in the Milky Way

NASA Astrophysics Data System (ADS)

Grimaldi, Claudio

2017-04-01

The lack of evidence for the existence of extraterrestrial life, even the simplest forms of animal life, makes it is difficult to decide whether the search for extraterrestrial intelligence (SETI) is more a high-risk, high-payoff endeavor than a futile attempt. Here we insist that even if extraterrestrial civilizations do exist and communicate, the likelihood of detecting their signals crucially depends on whether the Earth lies within a region of the galaxy covered by such signals. By considering possible populations of independent emitters in the galaxy, we build a statistical model of the domain covered by hypothetical extraterrestrial signals to derive the detection probability that the Earth is within such a domain. We show that for general distributions of the signal longevity and directionality, the mean number of detectable emitters is less than one even for detection probabilities as large as 50%, regardless of the number of emitters in the galaxy.

Emittance Growth in the DARHT-II Linear Induction Accelerator

DOE PAGES

Ekdahl, Carl; Carlson, Carl A.; Frayer, Daniel K.; ...

2017-10-03

The dual-axis radiographic hydrodynamic test (DARHT) facility uses bremsstrahlung radiation source spots produced by the focused electron beams from two linear induction accelerators (LIAs) to radiograph large hydrodynamic experiments driven by high explosives. Radiographic resolution is determined by the size of the source spot, and beam emittance is the ultimate limitation to spot size. On the DARHT-II LIA, we measure an emittance higher than predicted by theoretical simulations, and even though this accelerator produces submillimeter source spots, we are exploring ways to improve the emittance. Some of the possible causes for the discrepancy have been investigated using particle-in-cell codes. Finally,more » the simulations establish that the most likely source of emittance growth is a mismatch of the beam to the magnetic transport, which can cause beam halo.« less

Emittance Growth in the DARHT-II Linear Induction Accelerator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ekdahl, Carl; Carlson, Carl A.; Frayer, Daniel K.

The dual-axis radiographic hydrodynamic test (DARHT) facility uses bremsstrahlung radiation source spots produced by the focused electron beams from two linear induction accelerators (LIAs) to radiograph large hydrodynamic experiments driven by high explosives. Radiographic resolution is determined by the size of the source spot, and beam emittance is the ultimate limitation to spot size. On the DARHT-II LIA, we measure an emittance higher than predicted by theoretical simulations, and even though this accelerator produces submillimeter source spots, we are exploring ways to improve the emittance. Some of the possible causes for the discrepancy have been investigated using particle-in-cell codes. Finally,more » the simulations establish that the most likely source of emittance growth is a mismatch of the beam to the magnetic transport, which can cause beam halo.« less

Flat panel ferroelectric electron emission display system

DOEpatents

Sampayan, S.E.; Orvis, W.J.; Caporaso, G.J.; Wieskamp, T.F.

1996-04-16

A device is disclosed which can produce a bright, raster scanned or non-raster scanned image from a flat panel. Unlike many flat panel technologies, this device does not require ambient light or auxiliary illumination for viewing the image. Rather, this device relies on electrons emitted from a ferroelectric emitter impinging on a phosphor. This device takes advantage of a new electron emitter technology which emits electrons with significant kinetic energy and beam current density. 6 figs.

Sources of Emittance in RF Photocathode Injectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dowell, David

2016-12-11

Advances in electron beam technology have been central to creating the current generation of x-ray free electron lasers and ultra-fast electron microscopes. These once exotic devices have become essential tools for basic research and applied science. One important beam technology for both is the electron source which, for many of these instruments, is the photocathode RF gun. The invention of the photocathode gun and the concepts of emittance compensation and beam matching in the presence of space charge and RF forces have made these high-quality beams possible. Achieving even brighter beams requires a taking a finer resolution view of themore » electron dynamics near the cathode during photoemission and the initial acceleration of the beam. In addition, the high brightness beam is more sensitive to degradation by the optical aberrations of the gun’s RF and magnetic lenses. This paper discusses these topics including the beam properties due to fundamental photoemission physics, space charge effects close to the cathode, and optical distortions introduced by the RF and solenoid fields. Analytic relations for these phenomena are derived and compared with numerical simulations.« less

Solar cells with gallium phosphide/silicon heterojunction

NASA Astrophysics Data System (ADS)

Darnon, Maxime; Varache, Renaud; Descazeaux, Médéric; Quinci, Thomas; Martin, Mickaël; Baron, Thierry; Muñoz, Delfina

2015-09-01

One of the limitations of current amorphous silicon/crystalline silicon heterojunction solar cells is electrical and optical losses in the front transparent conductive oxide and amorphous silicon layers that limit the short circuit current. We propose to grow a thin (5 to 20 nm) crystalline Gallium Phosphide (GaP) by epitaxy on silicon to form a more transparent and more conducting emitter in place of the front amorphous silicon layers. We show that a transparent conducting oxide (TCO) is still necessary to laterally collect the current with thin GaP emitter. Larger contact resistance of GaP/TCO increases the series resistance compared to amorphous silicon. With the current process, losses in the IR region associated with silicon degradation during the surface preparation preceding GaP deposition counterbalance the gain from the UV region. A first cell efficiency of 9% has been obtained on ˜5×5 cm2 polished samples.

Materials characterization of impregnated W and W-Ir cathodes after oxygen poisoning

NASA Astrophysics Data System (ADS)

Polk, James E.; Capece, Angela M.

2015-05-01

Electric thrusters use hollow cathodes as the electron source for generating the plasma discharge and for beam neutralization. These cathodes contain porous tungsten emitters impregnated with BaO material to achieve a lower surface work function and are operated with xenon propellant. Oxygen contaminants in the xenon plasma can poison the emitter surface, resulting in a higher work function and increased operating temperature. This could lead directly to cathode failure by preventing discharge ignition or could accelerate evaporation of the BaO material. Exposures over hundreds of hours to very high levels of oxygen can result in increased temperatures, oxidation of the tungsten substrate, and the formation of surface layers of barium tungstates. In this work, we present results of a cathode test in which impregnated tungsten and tungsten-iridium emitters were operated with 100 ppm of oxygen in the xenon plasma for several hundred hours. The chemical and morphological changes were studied using scanning electron microscopy, energy dispersive spectroscopy, and laser profilometry. The results provide strong evidence that high concentrations of oxygen accelerate the formation of tungstate layers in both types of emitters, a phenomenon not inherent to normal cathode operation. Deposits of pure tungsten were observed on the W-Ir emitter, indicating that tungsten is preferentially removed from the surface and transported in the insert plasma. A W-Ir cathode surface will therefore evolve to a pure W composition, eliminating the work function benefit of W-Ir. However, the W-Ir emitter exhibited less erosion and redeposition at the upstream end than the pure W emitter.

Design, fabrication, and experimental characterization of plasmonic photoconductive terahertz emitters.

PubMed

Berry, Christopher; Hashemi, Mohammad Reza; Unlu, Mehmet; Jarrahi, Mona

2013-07-08

In this video article we present a detailed demonstration of a highly efficient method for generating terahertz waves. Our technique is based on photoconduction, which has been one of the most commonly used techniques for terahertz generation (1-8). Terahertz generation in a photoconductive emitter is achieved by pumping an ultrafast photoconductor with a pulsed or heterodyned laser illumination. The induced photocurrent, which follows the envelope of the pump laser, is routed to a terahertz radiating antenna connected to the photoconductor contact electrodes to generate terahertz radiation. Although the quantum efficiency of a photoconductive emitter can theoretically reach 100%, the relatively long transport path lengths of photo-generated carriers to the contact electrodes of conventional photoconductors have severely limited their quantum efficiency. Additionally, the carrier screening effect and thermal breakdown strictly limit the maximum output power of conventional photoconductive terahertz sources. To address the quantum efficiency limitations of conventional photoconductive terahertz emitters, we have developed a new photoconductive emitter concept which incorporates a plasmonic contact electrode configuration to offer high quantum-efficiency and ultrafast operation simultaneously. By using nano-scale plasmonic contact electrodes, we significantly reduce the average photo-generated carrier transport path to photoconductor contact electrodes compared to conventional photoconductors (9). Our method also allows increasing photoconductor active area without a considerable increase in the capacitive loading to the antenna, boosting the maximum terahertz radiation power by preventing the carrier screening effect and thermal breakdown at high optical pump powers. By incorporating plasmonic contact electrodes, we demonstrate enhancing the optical-to-terahertz power conversion efficiency of a conventional photoconductive terahertz emitter by a factor of 50 (10).

Effect of horizontal molecular orientation on triplet-exciton diffusion in amorphous organic films

NASA Astrophysics Data System (ADS)

Sawabe, T.; Takasu, I.; Yonehara, T.; Ono, T.; Yoshida, J.; Enomoto, S.; Amemiya, I.; Adachi, C.

2012-09-01

Triplet harvesting is a candidate technology for highly efficient and long-life white OLEDs, where green or red phosphorescent emitters are activated by the triplet-excitons diffused from blue fluorescent emitters. We examined two oxadiazole-based electron transport materials with different horizontal molecular orientation as a triplet-exciton diffusion layer (TDL) in triplet-harvesting OLEDs. The device characteristics and the transient electroluminescent analyses of the red phosphorescent emitter showed that the triplet-exciton diffusion was more effective in the highly oriented TDL. The results are ascribed to the strong orbital overlap between the oriented molecules, which provides rapid electron exchange (Dexter energy transfer) in the TDL.

Low energy, high power hydrogen neutral beam for plasma heating

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deichuli, P.; Davydenko, V.; Ivanov, A., E-mail: ivanov@inp.nsk.su

A high power, relatively low energy neutral beam injector was developed to upgrade of the neutral beam system of the gas dynamic trap device and C2-U experiment. The ion source of the injector produces a proton beam with the particle energy of 15 keV, current of up to 175 A, and pulse duration of a few milliseconds. The plasma emitter of the ion source is produced by superimposing highly ionized plasma jets from an array of four arc-discharge plasma generators. A multipole magnetic field produced with permanent magnets at the periphery of the plasma box is used to increase themore » efficiency and improve the uniformity of the plasma emitter. Multi-slit grids with 48% transparency are fabricated from bronze plates, which are spherically shaped to provide geometrical beam focusing. The focal length of the Ion Optical System (IOS) is 3.5 m and the initial beam diameter is 34 cm. The IOS geometry and grid potentials were optimized numerically to ensure accurate beam formation. The measured angular divergences of the beam are ±0.01 rad parallel to the slits and ±0.03 rad in the transverse direction.« less

Production of Thorium-229 at the ORNL High Flux Isotope Reactor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boll, Rose Ann; Garland, Marc A; Mirzadeh, Saed

The investigation of targeted cancer therapy using -emitters has developed considerably in recent years and clinical trials have generated promising results. In particular, the initial clinical trials for treatment of acute myeloid leukemia have demonstrated the effectiveness of the -emitter 213Bi in killing cancer cells [1]. Pre-clinical studies have also shown the potential application of both 213Bi and its 225Ac parent radionuclide in a variety of cancer systems and targeted radiotherapy [2]. Bismuth-213 is obtained from a radionuclide generator system from decay of the 10-d 225Ac parent, a member of the 7340-y 229Th chain. Currently, 233U is the only viablemore » source for high purity 229Th; however, due to increasing difficulties associated with 233U safeguards, processing additional 233U is presently unfeasible. The recent decision to downblend and dispose of enriched 233U further diminished the prospects for extracting 229Th from 233U stock. Nevertheless, the anticipated growth in demand for 225Ac may soon exceed the levels of 229Th (~40 g or ~8 Ci; ~80 times the current ORNL 229Th stock) present in the aged 233U stockpile. The alternative routes for the production of 229Th, 225Ra and 225Ac include both reactor and accelerator approaches [3]. Here, we describe production of 229Th via neutron transmutation of 226Ra targets in the ORNL High Flux Isotope Reactor (HFIR).« less

431 kA/cm2 peak tunneling current density in GaN/AlN resonant tunneling diodes

NASA Astrophysics Data System (ADS)

Growden, Tyler A.; Zhang, Weidong; Brown, Elliott R.; Storm, David F.; Hansen, Katurah; Fakhimi, Parastou; Meyer, David J.; Berger, Paul R.

2018-01-01

We report on the design and fabrication of high current density GaN/AlN double barrier resonant tunneling diodes grown via plasma assisted molecular-beam epitaxy on bulk GaN substrates. A quantum-transport solver was used to model and optimize designs with high levels of doping and ultra-thin AlN barriers. The devices displayed repeatable room temperature negative differential resistance with peak-to-valley current ratios ranging from 1.20 to 1.60. A maximum peak tunneling current density (Jp) of 431 kA/cm2 was observed. Cross-gap near-UV (370-385 nm) electroluminescence (EL) was observed above +6 V when holes, generated from a polarization induced Zener tunneling effect, recombine with electrons in the emitter region. Analysis of temperature dependent measurements, thermal resistance, and the measured EL spectra revealed the presence of severe self-heating effects.

Beam commission of the high intensity proton source developed at INFN-LNS for the European Spallation Source

NASA Astrophysics Data System (ADS)

Neri, L.; Celona, L.; Gammino, S.; Miraglia, A.; Leonardi, O.; Castro, G.; Torrisi, G.; Mascali, D.; Mazzaglia, M.; Allegra, L.; Amato, A.; Calabrese, G.; Caruso, A.; Chines, F.; Gallo, G.; Longhitano, A.; Manno, G.; Marletta, S.; Maugeri, A.; Passarello, S.; Pastore, G.; Seminara, A.; Spartà, A.; Vinciguerra, S.

2017-07-01

At the Istituto Nazionale di Fisica Nucleare - Laboratori Nazionali del Sud (INFN-LNS) the beam commissioning of the high intensity Proton Source for the European Spallation Source (PS-ESS) started in November 2016. Beam stability at high current intensity is one of the most important parameter for the first steps of the ongoing commissioning. Promising results were obtained since the first source start with a 6 mm diameter extraction hole. The increase of the extraction hole to 8 mm allowed improving PS-ESS performances and obtaining the values required by the ESS accelerator. In this work, extracted beam current characteristics together with Doppler shift and emittance measurements are presented, as well as the description of the next phases before the installation at ESS in Lund.

Laser waveform control of extreme ultraviolet high harmonics from solids.

PubMed

You, Yong Sing; Wu, Mengxi; Yin, Yanchun; Chew, Andrew; Ren, Xiaoming; Gholam-Mirzaei, Shima; Browne, Dana A; Chini, Michael; Chang, Zenghu; Schafer, Kenneth J; Gaarde, Mette B; Ghimire, Shambhu

2017-05-01

Solid-state high-harmonic sources offer the possibility of compact, high-repetition-rate attosecond light emitters. However, the time structure of high harmonics must be characterized at the sub-cycle level. We use strong two-cycle laser pulses to directly control the time-dependent nonlinear current in single-crystal MgO, leading to the generation of extreme ultraviolet harmonics. We find that harmonics are delayed with respect to each other, yielding an atto-chirp, the value of which depends on the laser field strength. Our results provide the foundation for attosecond pulse metrology based on solid-state harmonics and a new approach to studying sub-cycle dynamics in solids.

X-ray and multiwavelength insights into the inner structure of high-luminosity disc-like emitters

NASA Astrophysics Data System (ADS)

Luo, B.; Brandt, W. N.; Eracleous, M.; Wu, Jian; Hall, P. B.; Rafiee, A.; Schneider, D. P.; Wu, Jianfeng

2013-02-01

We present X-ray and multiwavelength studies of a sample of eight high-luminosity active galactic nuclei (AGN) with disc-like Hβ emission-line profiles selected from the Sloan Digital Sky Survey Data Release 7. These sources have higher redshift (z ≈ 0.6) than the majority of the known disc-like emitters, and they occupy a largely unexplored space in the luminosity-redshift plane. Seven sources have typical AGN X-ray spectra with power-law photon indices of Γ ≈ 1.4-2.0; two of them show some X-ray absorption (column density NH ≈ 1021-1022 cm-2 for neutral gas). The other source, J0850+4451, has only three hard X-ray photons detected and is probably heavily obscured (NH ≳ 3 × 1023 cm-2). This object is also identified as a low-ionization broad absorption line (BAL) quasar based on Mg II λ2799 absorption; it is the first disc-like emitter reported that is also a BAL quasar. The infrared-to-ultraviolet (UV) spectral energy distributions (SEDs) of these eight sources are similar to the mean SEDs of typical quasars with a UV `bump', suggestive of standard accretion discs radiating with high efficiency, which differs from low-luminosity disc-like emitters. Studies of the X-ray-to-optical power-law slope parameters (αOX) indicate that there is no significant excess X-ray emission in these high-luminosity disc-like emitters. Energy budget analysis suggests that for disc-like emitters in general, the inner disc must illuminate and ionize the outer disc efficiently (≈15 per cent of the nuclear ionizing radiation is required on average) via direct illumination and/or scattering. Warped accretion discs are probably needed for direct illumination to work in high-luminosity objects, as their geometrically thin inner discs decrease the amount of direct illumination possible for a flat disc.

Emittance preservation in plasma-based accelerators with ion motion

DOE PAGES

Benedetti, C.; Schroeder, C. B.; Esarey, E.; ...

2017-11-01

In a plasma-accelerator-based linear collider, the density of matched, low-emittance, high-energy particle bunches required for collider applications can be orders of magnitude above the background ion density, leading to ion motion, perturbation of the focusing fields, and, hence, to beam emittance growth. By analyzing the response of the background ions to an ultrahigh density beam, analytical expressions, valid for nonrelativistic ion motion, are derived for the transverse wakefield and for the final (i.e., after saturation) bunch emittance. Analytical results are validated against numerical modeling. Initial beam distributions are derived that are equilibrium solutions, which require head-to-tail bunch shaping, enabling emittancemore » preservation with ion motion.« less

Triplet diffusion leads to triplet-triplet annihilation in organic phosphorescent emitters

NASA Astrophysics Data System (ADS)

Zhang, Yifan; Forrest, Stephen R.

2013-12-01

In organic materials, triplet-triplet annihilation (TTA) can be dominated by triplet diffusion or triplet-to-triplet energy transfer. Here, we discuss the diffusion and transfer dominated mechanisms in the context of photoluminescence (PL) transient measurements from thin films of archetype phosphorescent organic light emitters based on Ir and Pt complexes. We find that TTA in these emitters is controlled by diffusion due to a Dexter-type exchange interaction, suggesting triplet radiative decay and TTA are independent processes. Minimizing the PL and absorption spectral overlap in phosphorescent emitters can lead to a significantly decreased TTA rate, and thus suppressed efficiency roll-off in phosphorescent organic light emitting diodes at high brightness.

Effect of emitter layer doping concentration on the performance of a silicon thin film heterojunction solar cell

NASA Astrophysics Data System (ADS)

Zhang, Lei; Shen, Hong-Lie; Yue, Zhi-Hao; Jiang, Feng; Wu, Tian-Ru; Pan, Yuan-Yuan

2013-01-01

A novel type of n/i/i/p heterojunction solar cell with a-Si:H(15 nm)/a-Si:H(10 nm)/ epitaxial c-Si(47 μm)/epitaxial c-Si(3 μm) structure is fabricated by using the layer transfer technique, and the emitter layer is deposited by hot wire chemical vapour deposition. The effect of the doping concentration of the emitter layer Sd (Sd=PH3/(PH3+SiH4+H2)) on the performance of the solar cell is studied by means of current density—voltage and external quantum efficiency. The results show that the conversion efficiency of the solar cell first increases to a maximum value and then decreases with Sd increasing from 0.1% to 0.4%. The best performance of the solar cell is obtained at Sd = 0.2% with an open circuit voltage of 534 mV, a short circuit current density of 23.35 mA/cm2, a fill factor of 63.3%, and a conversion efficiency of 7.9%.

Numerical modelling of the CEBAF electron gun with EGUN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Philippe Liger; Geoffrey Krafft

1990-09-10

The electron source used in the injector for the CEBAF accelerator is a Hermosa electron gun with a 2 mm diameter cathode and a control electrode. It produces a 100 keV electron beam to be focused on the first of two apertures which comprise an emittance filter. A normalized emittance of less than {pi} mm mrad at 1.2 mA is set by the requirements of the final beam from the CEBAF linac, since downstream of the filter, a system of two choppers and a third aperture removes 5/6 of the current. In addition, for RF test purposes a higher currentmore » of about 5 mA is needed, possibly at higher emittance. This paper presents a way of calculating the characteristics of the CEBAF electron gun with the gun design code EGUN, and the accuracy of the results is discussed. The transverse shape of the beam delivered by the gun has been observed, and its current measured. A halo around the beam has been seen, and the calculations can reproduce this effect.« less

Aberrations and Emittance Growth in the DARHT 2nd Axis Downstream Transport

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schulze, Martin E.

The emittance of the DARHT 2 nd Axis has been inferred from solenoid scans performed in the downstream transport (DST) region using a short kicked pulse. The beam spot size is measured by viewing optical transition radiation (OTR) in the near field as a function of the field (current) of a solenoid magnet (S4). The imaging station containing the OTR target is located about 100 cm downstream of the solenoid magnet. The emittance is then inferred using a beam optics code such as LAMDA or XTR by fitting the data to initial conditions upstream of the S4 solenoid magnet. Themore » initial conditions are the beam size, beam convergence and emittance. The beam energy and current are measured. In preparation for a solenoid scan, the magnets upstream of the solenoid are adjusted to produce a round beam with no beam losses due to scraping in the beam tube. This is different from the standard tune in which the beam tune is adjusted to suppress the effects of ions and rf in the septum dump. In this standard tune, approximately 10% of the beam is lost due to scraping as the beam enters the small 3.75” ID beam tube after the septum. The normalized emittance inferred from recent solenoid scans typically ranges from 600 to 800 π(mm-mrad). This larger beam size increases the sensitivity to any non-linear fields in the Collins quadrupoles that are mounted along the small diameter beam tube. The primary magnet used to adjust the beam size in this region is the S3 solenoid magnet. Measurements made of the beam shape as the beam size was decreased showed significant structure consistent with non-linear fields. Using the measured magnetic fields in the Collins quadrupoles including higher order multipoles, the beam transport through the Collins quadrupoles is simulated and compared to the observed OTR images. The simulations are performed using the beam optics codes TRANSPORT [1] and TURTLE [2]. Estimates of the emittance growth and beam losses are made as a function of the S3 magnet setting. The increase in the spot size on the x-ray production target resulting from this emittance growth is examined for different DST tunes.« less

Up-conversion in rare-earth doped micro-particles applied to new emissive two-dimensional displays

NASA Astrophysics Data System (ADS)

Milliez, Anne Janet

Up-conversion (UC) in rare-earth co-doped fluorides to convert diode laser light in the near infrared to red, green and blue visible light is applied to make possible high performance emissive displays. The infrared-to-visible UC in the materials we study is a sequential form of non-linear two photon absorption in which a strong absorbing constituent absorbs two low energy photons and transfers this energy to another constituent which emits visible light. Some of the UC emitters' most appealing characteristics for displays are: a wide color gamut with very saturated colors, very high brightness operation without damage to the emitters, long lifetimes and efficiencies comparable to those of existing technologies. Other advantages include simplicity of fabrication, versatility of operating modes, and the potential for greatly reduced display weight and depth. Thanks to recent advances in material science and diode laser technology at the excitation wavelength, UC selected materials can be very efficient visible emitters. However, optimal UC efficiencies strongly depend on chosing proper operating conditions. In this thesis, we studied the conditions required for optimization. We demonstrated that high efficiency UC depends on high pump irradiance, low temperature and low scattering. With this understanding we can predict how to optimally use UC emitters in a wide range of applications. In particular, we showed how our very efficient UC emitters can be applied to make full color displays and very efficient white light sources.

Interplay between morphological and shielding effects in field emission via Schwarz-Christoffel transformation

NASA Astrophysics Data System (ADS)

Marcelino, Edgar; de Assis, Thiago A.; de Castilho, Caio M. C.

2018-03-01

It is well known that sufficiently strong electrostatic fields are able to change the morphology of Large Area Field Emitters (LAFEs). This phenomenon affects the electrostatic interactions between adjacent sites on a LAFE during field emission and may lead to several consequences, such as: the emitter's degradation, diffusion of absorbed particles on the emitter's surface, deflection due to electrostatic forces, and mechanical stress. These consequences are undesirable for technological applications, since they may significantly affect the macroscopic current density on the LAFE. Despite the technological importance, these processes are not completely understood yet. Moreover, the electrostatic effects due to the proximity between emitters on a LAFE may compete with the morphological ones. The balance between these effects may lead to a non trivial behavior in the apex-Field Enhancement Factor (FEF). The present work intends to study the interplay between proximity and morphological effects by studying a model amenable for an analytical treatment. In order to do that, a conducting system under an external electrostatic field, with a profile limited by two mirror-reflected triangular protrusions on an infinite line, is considered. The FEF near the apex of each emitter is obtained as a function of their shape and the distance between them via a Schwarz-Christoffel transformation. Our results suggest that a tradeoff between morphological and proximity effects on a LAFE may provide an explanation for the observed reduction of the local FEF and its variation at small distances between the emitter sites.

Single-Photon Emitters in Boron Nitride Nanococoons.

PubMed

Ziegler, Joshua; Blaikie, Andrew; Fathalizadeh, Aidin; Miller, David; Yasin, Fehmi S; Williams, Kerisha; Mohrhardt, Jordan; McMorran, Benjamin J; Zettl, Alex; Alemán, Benjamín

2018-04-11

Quantum emitters in two-dimensional hexagonal boron nitride (hBN) are attractive for a variety of quantum and photonic technologies because they combine ultra-bright, room-temperature single-photon emission with an atomically thin crystal. However, the emitter's prominence is hindered by large, strain-induced wavelength shifts. We report the discovery of a visible-wavelength, single-photon emitter (SPE) in a zero-dimensional boron nitride allotrope (the boron nitride nanococoon, BNNC) that retains the excellent optical characteristics of few-layer hBN while possessing an emission line variation that is lower by a factor of 5 than the hBN emitter. We determined the emission source to be the nanometer-size BNNC through the cross-correlation of optical confocal microscopy with high-resolution scanning and transmission electron microscopy. Altogether, this discovery enlivens color centers in BN materials and, because of the BN nanococoon's size, opens new and exciting opportunities in nanophotonics, quantum information, biological imaging, and nanoscale sensing.

Aeolian removal of dust from radiator surfaces on Mars

NASA Technical Reports Server (NTRS)

Gaier, James R.; Perez-Davis, Marla E.; Rutledge, Sharon K.; Hotes, Deborah

1990-01-01

Simulated radiator surfaces made of arc-textured Cu and Nb-1 percent-Zr and ion beam textured graphite and C-C composite were fabricated and their integrated spectral emittance characterized from 300 to 3000 K. A thin layer of aluminum oxide, basalt, or iron (III) oxide dust was then deposited on them, and they were subjected to low pressure winds in the Martian Surface Wind Tunnel. It was found that dust deposited on simulated radiator surfaces may or may not seriously lower their integrated spectral emittance, depending upon the characteristics of the dust. With Al2O3 there is no appreciable degradation of emittance on a dusted sample, with basaltic dust there is a 10 to 20 percent degradation, and with Fe2O3 a 20 to 40 percent degradation. It was also found that very high winds on dusted highly textured surfaces can result in their abrasion. Degradation in emittance due to abrasion was found to vary with radiator material. Arc-textured Cu and Nb-1 percent Zr was found to be more susceptible to emittance degradation than graphite or C-C composite. The most abrasion occurred at low angles, peaking at the 22.5 deg test samples.

Cancellation of coherent synchrotron radiation kicks with optics balance.

PubMed

Di Mitri, S; Cornacchia, M; Spampinati, S

2013-01-04

Minimizing transverse emittance is essential in linear accelerators designed to deliver very high brightness electron beams. Emission of coherent synchrotron radiation (CSR), as a contributing factor to emittance degradation, is an important phenomenon to this respect. A manner in which to cancel this perturbation by imposing certain symmetric conditions on the electron transport system has been suggested.We first expand on this idea by quantitatively relating the beam Courant-Snyder parameters to the emittance growth and by providing a general scheme of CSR suppression with asymmetric optics, provided it is properly balanced along the line. We present the first experimental evidence of this cancellation with the resultant optics balance of multiple CSR kicks: the transverse emittance of a 500 pC, sub-picosecond, high brightness electron beam is being preserved after the passage through the achromatic transfer line of the FERMI@Elettra free electron laser, and emittance growth is observed when the optics balance is intentionally broken. We finally show the agreement between the theoretical model and the experimental results. This study holds the promise of compact dispersive lines with relatively large bending angles, thus reducing costs for future electron facilities.

Gamma compensated, self powered neutron detector

DOEpatents

Brown, Donald P.

1977-01-01

An improved, self-powered, gamma compensated, neutron detector having two electrically conductive concentric cylindrical electrodes and a central rod emitter formed from a material which emits beta particles when bombarded by neutrons. The outer electrode and emitter are maintained at a common potential and the neutron representative current is furnished at the inner cylindrical electrode which serves as a collector. The two concentric cylindrical electrodes are designed to exhibit substantially equal electron emission induced by Compton scattering under neutron bombardment to supply the desired gamma compensation.

Deep-UV Emitters and Detectors Based on Lattice-Matched Cubic Oxide Semiconductors (4.2 Optoelectronics)

DTIC Science & Technology

2015-05-14

calculated   by   dividing   photo-­‐‑ generated  current  by  the  optical  power  spectrum  of  the   lamp .    A   UV ...the optimized parameters for growth. Efforts led to significant increases in solar?blind detector responsivity (up to 0.1 A/W) with sub-­ nanoamp...Aug-2014 Approved for Public Release; Distribution Unlimited Final Report: Deep- UV Emitters and Detectors Based on Lattice- Matched Cubic Oxide

Electrical characterisation of SiGe heterojunction bipolar transistors and Si pseudo-HBTS

NASA Astrophysics Data System (ADS)

De Barros, O.; Le Tron, B.; Woods, R. C.; Giroult-Matlakowski, G.; Vincent, G.; Brémond, G.

1996-08-01

This paper reports an electrical characterisation of the emitter-base junction of Si pseudo-HBTs and SiGe HBTs fabricated in a CMOS compatible single polysilicon self-aligned process. From the reverse characteristics it appears that the definition of the emitter-base junction by plasma etching induces peripheral defects that increase the base current of the transistors. Deep level transient spectroscopy measurements show a deep level in the case of SiGe base, whose spatial origin is not fully determinate up to now.

Study of Hot-Electron Effects, Breakdown and Reliability in FETS, HEMTS, and HBT’S

DTIC Science & Technology

1998-08-01

10-20 V ) have been demonstrated, with power added efficiencies between 10% (around 1 W) and 50% (around 20 mW) at 60 GHz. For higher frequencies...IEDM98, pp. 695-698, S. Francisco, CA, December 6-9, 1998. G. Meneghesso, A. Neviani , R. Oesterholt, M. Matloubian, T. Liu, J. Brown, C. Canali and...8217 / / ’ ’ / / " / s / collector-to-emitter voltage VCE ( V ) Figure 1.1: Collector current, Ic vs. the collector to emitter voltage VCE at

Cold-start and chemical characterization of emissions from mobile sources in Mexico.

PubMed

Schifter, I; Díaz, L; Rodríguez, R

2010-10-01

In this work tailpipe and evaporative emissions from a set of normal and high emitter vehicle models, year 2006-2008 (low mileage) certified when new to meet the Tier 1 emission standard, were characterized for criteria pollutants (carbon monoxide, nitrogen oxides and hydrocarbons), and a suite of unregulated emissions including aliphatic and aromatic aldehydes, monocyclic aromatic compounds, 1,3 butadiene, n-hexane and acrolein. Data were obtained under the three different driving conditions of the United States Federal Test Procedure, FTP-75 cycle. High emissions of both regulated and unregulated pollutants were observed in the cold-start phase of the driving cycle for low mileage Tier 1 normal and high emitters engines. Data were compared with results obtained for a set of MY > 1992-2005 that included vehicles with no catalytic converters, Tier 0 and MY 2000-5 Tier 1 emission standard with high mileage. The calculated average cold-start emissions for normal emitters in grams are 0.93, 8.21 and 1.06 for NMHC CO, and NOx, respectively for Tier 1 low mileage vehicles. The reductions in emissions for Tier 1 normal emitters are 76%, 56% and 56% for NMHC, CO and NOx, respectively, but 58%, 30% and 25% for the high emitters. Differences in emission can be ascribed to the mileage accumulation more than technological improvements. Cold-start emissions account in the USA roughly 10% of emissions from gasoline-powered vehicles. In Mexico the fractions are likely to be higher because one must account also for the contribution of Tier 0 and the running exhausts emissions of vehicles with no catalytic converters.

A high brightness proton injector for the Tandetron accelerator at Jožef Stefan Institute

NASA Astrophysics Data System (ADS)

Pelicon, Primož; Podaru, Nicolae C.; Vavpetič, Primož; Jeromel, Luka; Ogrinc Potocnik, Nina; Ondračka, Simon; Gottdang, Andreas; Mous, Dirk J. M.

2014-08-01

Jožef Stefan Institute recently commissioned a high brightness H- ion beam injection system for its existing tandem accelerator facility. Custom developed by High Voltage Engineering Europa, the multicusp ion source has been tuned to deliver at the entrance of the Tandetron™ accelerator H- ion beams with a measured brightness of 17.1 A m-2 rad-2 eV-1 at 170 μA, equivalent to an energy normalized beam emittance of 0.767 π mm mrad MeV1/2. Upgrading the accelerator facility with the new injection system provides two main advantages. First, the high brightness of the new ion source enables the reduction of object slit aperture and the reduction of acceptance angle at the nuclear microprobe, resulting in a reduced beam size at selected beam intensity, which significantly improves the probe resolution for micro-PIXE applications. Secondly, the upgrade strongly enhances the accelerator up-time since H and He beams are produced by independent ion sources, introducing a constant availability of 3He beam for fusion-related research with NRA. The ion beam particle losses and ion beam emittance growth imply that the aforementioned beam brightness is reduced by transport through the ion optical system. To obtain quantitative information on the available brightness at the high-energy side of the accelerator, the proton beam brightness is determined in the nuclear microprobe beamline. Based on the experience obtained during the first months of operation for micro-PIXE applications, further necessary steps are indicated to obtain optimal coupling of the new ion source with the accelerator to increase the normalized high-energy proton beam brightness at the JSI microprobe, currently at 14 A m-2 rad-2 eV-1, with the output current at 18% of its available maximum.

The 3-D numerical simulation research of vacuum injector for linear induction accelerator

NASA Astrophysics Data System (ADS)

Liu, Dagang; Xie, Mengjun; Tang, Xinbing; Liao, Shuqing

2017-01-01

Simulation method for voltage in-feed and electron injection of vacuum injector is given, and verification of the simulated voltage and current is carried out. The numerical simulation for the magnetic field of solenoid is implemented, and a comparative analysis is conducted between the simulation results and experimental results. A semi-implicit difference algorithm is adopted to suppress the numerical noise, and a parallel acceleration algorithm is used for increasing the computation speed. The RMS emittance calculation method of the beam envelope equations is analyzed. In addition, the simulated results of RMS emittance are compared with the experimental data. Finally, influences of the ferromagnetic rings on the radial and axial magnetic fields of solenoid as well as the emittance of beam are studied.

Minimization of three-dimensional beam emittance growth in rare-isotope accelerator

NASA Astrophysics Data System (ADS)

Oh, B. H.; Yoon, M.

2016-12-01

In this paper, we describe a research to minimize the three-dimensional (3D) emittance growth (EG) in the RAON accelerator, a heavy ion accelerator currently being developed in Korea to produce various rare isotopes. The emittance minimization is performed using the multi-objective genetic algorithm and the simplex method. We use them to analyze the driver linac for the in-flight fragmentation separator of the RAON facility and show that redesign of the 90-degree bending section of the RAON accelerator together with adjustment of optics in the upstream and downstream superconducting linacs can limit the 3D EG to 20 % in the entire region of the driver linac. Effects of various magnet and rf accelerating cavity errors on the beam-EG are also discussed.

Impact of boron rich layer on performance degradation in boric acid diffused emitters for n-type crystalline Si solar cells

NASA Astrophysics Data System (ADS)

Singha, Bandana; Singh Solanki, Chetan

2018-01-01

Boron rich layer (BRL) formed beneath the borosilicate glass layer during p-type emitter formation is an undesirable phenomenon. It influences different cell parameters and can degrade the device performance. In this work, the device degradation study is done for different BRL thicknesses produced with different concentrations of the boric acid dopant source. The bulk carrier lifetime reduces to more than 75% and emitter saturation current density becomes more than 10-12 mA cm-2 for 60 nm of BRL thickness. The observed J sc and V oc values become zero for BRL thicknesses higher than 40 nm as seen in this work and the device properties could not be enhanced. So, higher thicknesses of BRL should be avoided.

Electrically-driven GHz range ultrafast graphene light emitter (Conference Presentation)

NASA Astrophysics Data System (ADS)

Kim, Youngduck; Gao, Yuanda; Shiue, Ren-Jye; Wang, Lei; Aslan, Ozgur Burak; Kim, Hyungsik; Nemilentsau, Andrei M.; Low, Tony; Taniguchi, Takashi; Watanabe, Kenji; Bae, Myung-Ho; Heinz, Tony F.; Englund, Dirk R.; Hone, James

2017-02-01

Ultrafast electrically driven light emitter is a critical component in the development of the high bandwidth free-space and on-chip optical communications. Traditional semiconductor based light sources for integration to photonic platform have therefore been heavily studied over the past decades. However, there are still challenges such as absence of monolithic on-chip light sources with high bandwidth density, large-scale integration, low-cost, small foot print, and complementary metal-oxide-semiconductor (CMOS) technology compatibility. Here, we demonstrate the first electrically driven ultrafast graphene light emitter that operate up to 10 GHz bandwidth and broadband range (400 1600 nm), which are possible due to the strong coupling of charge carriers in graphene and surface optical phonons in hBN allow the ultrafast energy and heat transfer. In addition, incorporation of atomically thin hexagonal boron nitride (hBN) encapsulation layers enable the stable and practical high performance even under the ambient condition. Therefore, electrically driven ultrafast graphene light emitters paves the way towards the realization of ultrahigh bandwidth density photonic integrated circuits and efficient optical communications networks.

Heterojunction solar cell with passivated emitter surface

DOEpatents

Olson, Jerry M.; Kurtz, Sarah R.

1994-01-01

A high-efficiency heterojunction solar cell wherein a thin emitter layer (preferably Ga.sub.0.52 In.sub.0.48 P) forms a heterojunction with a GaAs absorber layer. A passivating window layer of defined composition is disposed over the emitter layer. The conversion efficiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the window layer.

Heterojunction solar cell with passivated emitter surface

DOEpatents

Olson, J.M.; Kurtz, S.R.

1994-05-31

A high-efficiency heterojunction solar cell is described wherein a thin emitter layer (preferably Ga[sub 0.52]In[sub 0.48]P) forms a heterojunction with a GaAs absorber layer. A passivating window layer of defined composition is disposed over the emitter layer. The conversion efficiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the window layer. 1 fig.

Micro-power dissipation device described

NASA Astrophysics Data System (ADS)

Mao, X.; Zhou, L.; Zhou, J.

1985-11-01

The common-emitter current gain beta of a common two-pole transistor is generally below 250. They are referred to as high-beta or high gain transistors when the beta of such transistors exceeds 300. When the beta of a transistor is higher than 1,000, it is called a super-beta transistor (SBT) or supergain transistor. The micropower dissipation type has the widest applications among the high-beta. Micropower dissipation high-beta means that there is a high gain or a superhigh gain under a microcurrent. The device is widely used in small signal-detection systems and stereo audio equipment because of their characteristics of high gain, low frequency and low noise under small signals.

Fluorescence enhancement and strong-coupling in faceted plasmonic nanocavities

NASA Astrophysics Data System (ADS)

Kongsuwan, Nuttawut; Demetriadou, Angela; Chikkaraddy, Rohit; Baumberg, Jeremy J.; Hess, Ortwin

2018-06-01

Emission properties of a quantum emitter can be significantly modified inside nanometre-sized gaps between two plasmonic nanostructures. This forms a nanoscopic optical cavity which allows single-molecule detection and single-molecule strong-coupling at room temperature. However, plasmonic resonances of a plasmonic nanocavity are highly sensitive to the exact gap morphology. In this article, we shed light on the effect of gap morphology on the plasmonic resonances of a faceted nanoparticle-on-mirror (NPoM) nanocavity and their interaction with quantum emitters. We find that with increasing facet width the NPoM nanocavity provides weaker field enhancement and thus less coupling strength to a single quantum emitter since the effective mode volume increases with the facet width. However, if multiple emitters are present, a faceted NPoM nanocavity is capable of accommodating a larger number of emitters, and hence the overall coupling strength is larger due to the collective and coherent energy exchange from all the emitters. Our findings pave the way to more efficient designs of nanocavities for room-temperature light-matter strong-coupling, thus providing a big step forward to a non-cryogenic platform for quantum technologies.

Fabrication and life testing of thermionic converters

NASA Technical Reports Server (NTRS)

Yang, L.; Bruce, R.

1973-01-01

An unfueled converter containing a chloride-fluoride duplex tungsten emitter of 4.78 eV vacuum work function was tested for 46,647 hours at an emitter temperature of 1973 K and an electrode power output of about 8 watts/sq cm. The test demonstrated the superior and stable performance of the (110) oriented tungsten emitter at high temperatures. Three 90 UC-10 ZrC(C/U = 1.04, tungsten additive = 4 wt %) fueled converters were fabricated and tested at an emitter temperature of 1873 K. Converter containing chloride-arc-cast duplex tungsten cladding showed temperature thermionic performance and slower rate of performance drop than converter containing chloride-fluoride duplex tungsten cladding. This is believed to be due to the superior fuel component diffusion resistance of the arc-cast tungsten substrate used in the fuel cladding. It was shown that a converter containing a carbide fueled chloride-arc-cast duplex tungsten emitter with an initial electrode power output of 6.80 watts/sq cm could still deliver an electrode power output of 6.16 watts/sq cm after 18,632 hours of operation at an emitter temperature of 1873 K.

Effect of soil properties on Hydraulic characteristics under subsurface drip irrigation

NASA Astrophysics Data System (ADS)

Fan, Wangtao; Li, Gang

2018-02-01

Subsurface drip irrigation (SDI) is a technique that has a high potential in application because of its high efficiency in water-saving. The hydraulic characteristics of SDI sub-unit pipe network can be affected by soil physical properties as the emitters are buried in soils. The related research, however, is not fully explored. The laboratory tests were carried out in the present study to determine the effects of hydraulic factors including operating pressure, initial soil water content, and bulk density on flow rate and its sensitivity to each hydraulic factor for two types of SDI emitters (PLASSIM emitter and Heping emitter). For this purpose, three soils with contrasting textures (i.e., light sand, silt loam, and light clay) were repacked with two soil bulk density (1.25 and1.40 g cm-3) with two initial soil water content (12% and 18%) in plexiglass columns with 40 cm in diameter and 40 cm in height. Drip emitters were buried at depth of 20 cm to measure the flow rates under seven operating pressures (60, 100, 150, 200, 250, 300, and 370 kPa). We found that the operating pressure was the dominating factor of flow rate of the SDI emitter, and flow rate increased with the increase of operating pressure. The initial soil water content and bulk density also affected the flow rate, and their effects were the most notable in the light sand soil. The sensitivity of flow rate to each hydraulic factor was dependent on soil texture, and followed a descending order of light sand>silt loam>light clay for both types of emitters. Further, the sensitivity of flow rate to each hydraulic factor decreased with the increase of operating pressure, initial soil water content, and bulk density. This study may be used to guide the soil specific-design of SDI emitters for optimal water use and management.

Simple-to-prepare multipoint field emitter

NASA Astrophysics Data System (ADS)

Sominskii, G. G.; Taradaev, E. P.; Tumareva, T. A.; Mishin, M. V.; Kornishin, S. Yu.

2015-07-01

We investigate multitip field emitters prepared by electroerosion treatment of the surface of molybdenum samples. Their characteristics are determined for operation with a protecting activated fullerene coating. Our experiments indicate that such cathodes are promising for high-voltage electron devices operating in technical vacuum.

RF System for the MICE Demonstration of Ionisation Cooling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ronald, K.; et al.

2017-04-01

Muon accelerators offer an attractive option for a range of future particle physics experiments. They can enable high energy (TeV+) high energy lepton colliders whilst mitigating the difficulty of synchrotron losses, and can provide intense beams of neutrinos for fundamental physics experiments investigating the physics of flavor. The method of production of muon beams results in high beam emittance which must be reduced for efficient acceleration. Conventional emittance control schemes take too long, given the very short (2.2 microsecond) rest lifetime of the muon. Ionisation cooling offers a much faster approach to reducing particle emittance, and the international MICE collaborationmore » aims to demonstrate this technique for the first time. This paper will present the MICE RF system and its role in the context of the overall experiment.« less

Emission line galaxies at high redshift and analogs of the sources of cosmic reionization

NASA Astrophysics Data System (ADS)

Schaerer, D.

2017-11-01

We present recent work on emission line galaxies at high redshift and searches for analogs of the sources of cosmic reionization at low redshift. The VIMOS Ultra-Deep Survey (VUDS) carried out at the VLT has assembled more than 7000 spectra of galaxies from z 1.5 to 6 allowing us to address a wide diversity of questions with statistically meaningful samples. From VUDS we have recently identified a sample of CIII] and CIV] emitters at z 2-4 whose properties we present and discuss here (cf. Nakajima et al. 2017; Le Fevre et al. 2017). These objects provide interesting insight into the C/O ratio at high-z, the nature and hardness of their ionizing source, the ionizing photon production, and others. Targeting compact strong emission line galaxies with high [OIII]/[OII] ratios with the COS spectrograph on-board HST, we have recently been able to find several relatively strong Lyman continuum emitters at z 0.3 (Izotov et al. 2016ab). We describe the physical properties of these unique, rare low-z sources, which are found to be comparable to those of typical z>6 galaxies and thus currently the best analogs for the sources of cosmic reionization (cf. Schaerer et al. 2016). We also briefly discuss open questions and future steps.

Electron emission from ferroelectrics - a review

NASA Astrophysics Data System (ADS)

Riege, H.

1994-02-01

The strong pulsed emission of electrons from the surface of ferroelectric (FE) materials was discovered at CERN in 1987. Since then many aspects and properties of the method of generation and propagation of electron beams from FE have been studied experimentally. The method is based on macroscopic charge separation and self-emission of electrons under the influence of their own space-charge fields. Hence, this type of emission is not limited by the Langmuir-Child law as are conventional emission methods. Charge separation and electron emission can be achieved by rapid switching of the spontaneous, ferroelectric polarization. Polarization switching may be induced by application of electrical-field or mechanical-pressure pulses, as well as by thermal heating or laser illumination of the ferroelectric emitter. At higher emission intensities plasma formation assists the FE emission and leads to a strong growth of emitted current amplitude, which is no longer limited by the FE material and the surface properties. The most attractive features of FE emission are robustness and ease of manipulation of the emitter cathodes which can be transported through atmospheric air and used without any problems in vacuum, low-pressure gas or plasma environments. Large-area arrangements of multiple emitters, switched in interleaved mode, can produce electron beams of any shape, current amplitude or time structure. The successful application of FE emission in accelerator technology has been demonstrated experimentally in several cases, e.g. for triggering high-power gas switches, for photocathodes in electron guns, and for electron-beam generators intended to generate, neutralize and enhance ion beams in ion sources and ion linacs. Other applications can be envisaged in microwave power generators and in the fields of electronics and vacuum microelectronics.

High temperature fuel/emitter system for advanced thermionic fuel elements

NASA Astrophysics Data System (ADS)

Moeller, Helen H.; Bremser, Albert H.; Gontar, Alexander; Fiviesky, Evgeny

1997-01-01

Specialists in space applications are currently focusing on bimodal power systems designed to provide both electric power and thermal propulsion (Kennedy, 1994 and Houts, 1995). Our work showed that thermionics is a viable technology for nuclear bimodal power systems. We demonstrated that materials for a thermionic fuel-emitter combination capable of performing at operating temperatures of 2473 K are not only possible but available. The objective of this work, funded by the US Department of Energy, Office of Space and Defense Power Systems, was to evaluate the compatibility of fuel material consisting of an uranium carbide/tantalum carbide solid solution with an emitter material consisting of a monocrystalline tungsten-niobium alloy. The uranium loading of the fuel material was 70 mole% uranium carbide. The program was successfully accomplished by a B&W/SIA LUTCH team. Its workscope was integrated with tasks being performed at both Babcock & Wilcox, Lynchburg Research Center, Lynchburg, Virginia, and SIA LUTCH, Podolsk, Russia. Samples were fabricated by LUTCH and seven thermal tests were performed in a hydrogen atmosphere. The first preliminary test was performed at 2273 K by LUTCH, and the remaining six tests were performed At B&W. Three tests were performed at 2273 K, two at 2373 K, and the final test at 2473 K. The results showed that the fuel and emitter materials were compatible in the presence of hydrogen. No evidence of liquid formation, dissolution of the uranium carbide from the uranium carbide/tantalum carbide solid solution, or diffusion of the uranium into the monocrystalline tungsten alloy was observed. Among the highlights of the program was the successful export of the fuel samples from Russia and their import into the US by commercial transport. This paper will discuss the technical aspects of this work.

A case for ZnO nanowire field emitter arrays in advanced x-ray source applications

NASA Astrophysics Data System (ADS)

Robinson, Vance S.; Bergkvist, Magnus; Chen, Daokun; Chen, Jun; Huang, Mengbing

2016-09-01

Reviewing current efforts in X-ray source miniaturization reveals a broad spectrum of applications: Portable and/or remote nondestructive evaluation, high throughput protein crystallography, invasive radiotherapy, monitoring fluid flow and particulate generation in situ, and portable radiography devices for battle-front or large scale disaster triage scenarios. For the most part, all of these applications are being addressed with a top-down approach aimed at improving portability, weight and size. That is, the existing system or a critical sub-component is shrunk in some manner in order to miniaturize the overall package. In parallel to top-down x-ray source miniaturization, more recent efforts leverage field emission and semiconductor device fabrication techniques to achieve small scale x-ray sources via a bottom-up approach where phenomena effective at a micro/nanoscale are coordinated for macro-scale effect. The bottom-up approach holds potential to address all the applications previously mentioned but its entitlement extends into new applications with much more ground-breaking potential. One such bottom-up application is the distributed x-ray source platform. In the medical space, using an array of microscale x-ray sources instead of a single source promises significant reductions in patient dose as well as smaller feature detectability and fewer image artifacts. Cold cathode field emitters are ideal for this application because they can be gated electrostatically or via photonic excitation, they do not generate excessive heat like other common electron emitters, they have higher brightness and they are relatively compact. This document describes how ZnO nanowire field emitter arrays are well suited for distributed x-ray source applications because they hold promise in each of the following critical areas: emission stability, simple scalable fabrication, performance, radiation resistance and photonic coupling.

High-power operation of AlGaInP red laser diode for display applications

NASA Astrophysics Data System (ADS)

Kuramoto, K.; Nishida, T.; Abe, S.; Miyashita, M.; Mori, K.; Yagi, T.

2015-03-01

Substantial limitation of output power in AlGaInP based red broad area (BA) laser diode (LD) originates from an electron thermal overflow from an active layer to a p-cladding layer and fatal failure due to catastrophic optical mirror degradation during the LD operation. New red BA-LD was designed and fabricated. The LD chip had triple emitters in one chip with each stripe width of 60 um, and was assembled on Φ9.0 mm -TO package. The LD emitted exceeding 5.5 W at heat sink temperature of 25 °C and 3.8W at 45 °C under pulsed operation with frequency of 120Hz and duty of 30%, although the current product, which has a 40 um single emitter chip assembled on Φ5.6mm -TO, does 2.0 W at 25 °C. The lasing wavelength at 25 °C and 2.5W output was 638.6 nm. The preliminary aging test under the condition with the operation current of 3.56A, CW, auto-current-control mode (ACC), and the heat sink temperature of 20 °C (almost equal to the output of 3.5 W) indicated that the MTTF due to COMD was longer than 6,600 hours under CW, 22,000 hours under the pulse with duty of 30%.

Capillary Electrophoresis-nanoelectrospray Ionization-selected Reaction Monitoring Mass Spectrometry Via A True Sheathless Metal-coated Emitter Interface For Robust And High Sensitivity Sample Quantification

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guo, Xuejiang; Fillmore, Thomas L.; Gao, Yuqian

A new sheathless CITP/CZE-MS interface, based on a commercially available capillary with an integrated metal coated ESI emitter, was developed in this study aiming at overcoming the reproducibility and ruggedness problems, suffered to a certain degree by almost all the available CE-MS interfaces, and pushing the CE-MS technology suitable for routine sample analysis with high sensitivity. The new CITP/CZE-MS interface allows the electric contact between ESI voltage power supply and the CE separation liquid by using a conductive liquid that comes in contact with the metal coated surface of the ESI emitter, making it a true sheathless CE-MS interface. Stablemore » electrospray was established by avoiding the formation of gas bubbles from electro chemical reaction at the emitter tip or inside of the CE capillary. Crucial operating parameters, such as sample loading volume, flow rate, and separation voltage, were systematically evaluated for their effects on both CITP/CZE separation efficiency and MS detection sensitivity. Around one hundred CITP/CZE-MS analyses can be easily achieved by using the new sheathless CITP/CZE interface without a noticeable loss of metal coating on the ESI emitter surface, or degrading of the ESI emitter performance. The reproducibility in analyte migration time and quantitative performance of the new interface was experimentally evaluated to demonstrate a LOQ bellow 5 attomole.« less

High efficiency and stable white OLED using a single emitter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Jian

2016-01-18

The ultimate objective of this project was to demonstrate an efficient and stable white OLED using a single emitter on a planar glass substrate. The focus of the project is on the development of efficient and stable square planar phosphorescent emitters and evaluation of such class of materials in the device settings. Key challenges included improving the emission efficiency of molecular dopants and excimers, controlling emission color of emitters and their excimers, and improving optical and electrical stability of emissive dopants. At the end of this research program, the PI has made enough progress to demonstrate the potential of excimer-basedmore » white OLED as a cost-effective solution for WOLED panel in the solid state lighting applications.« less

Hybrid Integration of Solid-State Quantum Emitters on a Silicon Photonic Chip.

PubMed

Kim, Je-Hyung; Aghaeimeibodi, Shahriar; Richardson, Christopher J K; Leavitt, Richard P; Englund, Dirk; Waks, Edo

2017-12-13

Scalable quantum photonic systems require efficient single photon sources coupled to integrated photonic devices. Solid-state quantum emitters can generate single photons with high efficiency, while silicon photonic circuits can manipulate them in an integrated device structure. Combining these two material platforms could, therefore, significantly increase the complexity of integrated quantum photonic devices. Here, we demonstrate hybrid integration of solid-state quantum emitters to a silicon photonic device. We develop a pick-and-place technique that can position epitaxially grown InAs/InP quantum dots emitting at telecom wavelengths on a silicon photonic chip deterministically with nanoscale precision. We employ an adiabatic tapering approach to transfer the emission from the quantum dots to the waveguide with high efficiency. We also incorporate an on-chip silicon-photonic beamsplitter to perform a Hanbury-Brown and Twiss measurement. Our approach could enable integration of precharacterized III-V quantum photonic devices into large-scale photonic structures to enable complex devices composed of many emitters and photons.

Deterministic Integration of Quantum Dots into on-Chip Multimode Interference Beamsplitters Using in Situ Electron Beam Lithography.

PubMed

Schnauber, Peter; Schall, Johannes; Bounouar, Samir; Höhne, Theresa; Park, Suk-In; Ryu, Geun-Hwan; Heindel, Tobias; Burger, Sven; Song, Jin-Dong; Rodt, Sven; Reitzenstein, Stephan

2018-04-11

The development of multinode quantum optical circuits has attracted great attention in recent years. In particular, interfacing quantum-light sources, gates, and detectors on a single chip is highly desirable for the realization of large networks. In this context, fabrication techniques that enable the deterministic integration of preselected quantum-light emitters into nanophotonic elements play a key role when moving forward to circuits containing multiple emitters. Here, we present the deterministic integration of an InAs quantum dot into a 50/50 multimode interference beamsplitter via in situ electron beam lithography. We demonstrate the combined emitter-gate interface functionality by measuring triggered single-photon emission on-chip with g (2) (0) = 0.13 ± 0.02. Due to its high patterning resolution as well as spectral and spatial control, in situ electron beam lithography allows for integration of preselected quantum emitters into complex photonic systems. Being a scalable single-step approach, it paves the way toward multinode, fully integrated quantum photonic chips.

Emittance matching of a slow extracted beam for a rotating gantry

NASA Astrophysics Data System (ADS)

Fujimoto, T.; Iwata, Y.; Matsuba, S.; Fujita, T.; Sato, S.; Shirai, T.; Noda, K.

2017-09-01

The introduction of a heavy-ion rotating gantry is in progress at the Heavy Ion Medical Accelerator in Chiba (HIMAC) for realizing high-precision cancer therapy using heavy ions. A scanning irradiation method will be applied to this gantry course with 48-430 MeV/u beam energy. In the rotating gantry, the horizontal and vertical beam parameters are coupled by its rotation. To maintain a circular spot shape at the isocenter irrespective of the gantry angle, achieving symmetric phase space distribution of the horizontal and vertical beam at the entrance of the rotating gantry is necessary. Therefore, compensating the horizontal and vertical emittance is necessary. We consider using a thin scatterer method to compensate the emittance. After considering the optical design for emittance matching, the scatterer device is located in the high-energy beam transport line. In the beam commissioning, we confirm that the symmetrical spot shape is obtained at the isocenter without depending on the gantry angle.

Signal coverage approach to the detection probability of hypothetical extraterrestrial emitters in the Milky Way

PubMed Central

Grimaldi, Claudio

2017-01-01

The lack of evidence for the existence of extraterrestrial life, even the simplest forms of animal life, makes it is difficult to decide whether the search for extraterrestrial intelligence (SETI) is more a high-risk, high-payoff endeavor than a futile attempt. Here we insist that even if extraterrestrial civilizations do exist and communicate, the likelihood of detecting their signals crucially depends on whether the Earth lies within a region of the galaxy covered by such signals. By considering possible populations of independent emitters in the galaxy, we build a statistical model of the domain covered by hypothetical extraterrestrial signals to derive the detection probability that the Earth is within such a domain. We show that for general distributions of the signal longevity and directionality, the mean number of detectable emitters is less than one even for detection probabilities as large as 50%, regardless of the number of emitters in the galaxy. PMID:28401943

Characterizing the Performance of the Princeton Advanced Test Stand Ion Source

NASA Astrophysics Data System (ADS)

Stepanov, A.; Gilson, E. P.; Grisham, L.; Kaganovich, I.; Davidson, R. C.

2012-10-01

The Princeton Advanced Test Stand (PATS) is a compact experimental facility for studying the physics of intense beam-plasma interactions relevant to the Neutralized Drift Compression Experiment - II (NDCX-II). The PATS facility consists of a multicusp RF ion source mounted on a 2 m-long vacuum chamber with numerous ports for diagnostic access. Ar+ beams are extracted from the source plasma with three-electrode (accel-decel) extraction optics. The RF power and extraction voltage (30 - 100 kV) are pulsed to produce 100 μsec duration beams at 0.5 Hz with excellent shot-to-shot repeatability. Diagnostics include Faraday cups, a double-slit emittance scanner, and scintillator imaging. This work reports measurements of beam parameters for a range of beam energies (30 - 50 keV) and currents to characterize the behavior of the ion source and extraction optics. Emittance scanner data is used to calculate the beam trace-space distribution and corresponding transverse emittance. If the plasma density is changing during a beam pulse, time-resolved emittance scanner data has been taken to study the corresponding evolution of the beam trace-space distribution.

Fabrication of Highly Ordered Anodic Aluminium Oxide Templates on Silicon Substrates

DTIC Science & Technology

2007-01-01

highly ordered anodic aluminium oxide ( AAO ) templates of unprecedented pore uniformity directly on Si, enabled by new advances on two fronts – direct...field emitter, sensors, oscillators and photodetectors. 15. SUBJECT TERMS Anodic aluminum oxide , template-assisted nanofabrication, carbon nanotube...Fabrication of the aligned and patterned carbon nanotube field emitters using the anodic aluminum oxide nano-template on a Si wafer’, Synth. Met

Determination of radionuclides and radiochemical impurities produced by in-house cyclotron irradiation and subsequent radiosynthesis of PET tracers.

PubMed

Ishiwata, Kiichi; Hayashi, Kunpei; Sakai, Masanari; Kawauchi, Sugio; Hasegawa, Hideaki; Toyohara, Jun

2017-01-01

To elucidate the radionuclides and radiochemical impurities included in radiosynthesis processes of positron emission tomography (PET) tracers. Target materials and PET tracers were produced using a cyclotron/synthesis system from Sumitomo Heavy Industry. Positron and γ-ray emitting radionuclides were quantified by measuring radioactivity decay and using the high-purity Ge detector, respectively. Radiochemical species in gaseous and aqueous target materials were analyzed by gas and ion chromatography, respectively. Target materials had considerable levels of several positron emitters in addition to the positron of interest, and in the case of aqueous target materials extremely low levels of many γ-emitters. Five 11 C-, 15 O-, or 18 F-labeled tracers produced from gaseous materials via chemical reactions had no radionuclidic impurities, whereas 18 F-FDG, 18 F-NaF, and 13 N-NH 3 produced from aqueous materials had several γ-emitters as well as impure positron emitters. 15 O-Labeled CO 2 , O 2 , and CO had a radionuclidic impurity 13 N-N 2 (0.5-0.7 %). Target materials had several positron emitters other than the positron of interest, and extremely low level γ-emitters in the case of aqueous materials. PET tracers produced from gaseous materials except for 15 O-labeled gases had no impure radionuclides, whereas those derived from aqueous materials contained acceptable levels of impure positron emitters and extremely low levels of several γ-emitters.

Preliminary design of a high-intensity continuous-wave deuteron RFQ

NASA Astrophysics Data System (ADS)

Liu, X.; Kamigaito, O.; Sakamoto, N.; Yamada, K.

2017-07-01

A high-intensity deuteron linear accelerator is currently being studied as a promising candidate to treat high-level radioactive waste through the nuclear transmutation process. This paper presents the study on a design of a 75.5 MHz, 400 mA, continuous-wave deuteron radio-frequency quadrupole (RFQ), which is proposed as the front-end of such a linear accelerator. The results of the beam dynamics simulation suggest that the designed RFQ can accelerate a 400-mA deuteron beam from 100 keV to 2.5 MeV with a transmission rate of 92.0 ∼ 93.3%, depending on the assumed input transverse emittance.

Radioligand therapy of metastatic castration-resistant prostate cancer: current approaches.

PubMed

Awang, Zool Hilmi; Essler, Markus; Ahmadzadehfar, Hojjat

2018-05-23

Prostate Cancer is the forth most common type of cancer. Prostate-specific membrane antigen (PSMA) is anchored in the cell membrane of prostate epithelial cells. PSMA is highly expressed on prostate epithelial cells and strongly up-regulated in prostate cancer. Therefore it is an appropriate target for diagnostic and therapy of prostate cancer and its metastases. This article discusses several articles on radionuclide treatments in prostate cancer and the results on PSMA therapy with either beta or alpha emitters as a salvage therapy.

Method for maximizing the brightness of the bunches in a particle injector by converting a highly space-charged beam to a relativistic and emittance-dominated beam

DOEpatents

Hannon, Fay

2016-08-02

A method for maximizing the brightness of the bunches in a particle injector by converting a highly space-charged beam to a relativistic and emittance-dominated beam. The method includes 1) determining the bunch charge and the initial kinetic energy of the highly space-charge dominated input beam; 2) applying the bunch charge and initial kinetic energy properties of the highly space-charge dominated input beam to determine the number of accelerator cavities required to accelerate the bunches to relativistic speed; 3) providing the required number of accelerator cavities; and 4) setting the gradient of the radio frequency (RF) cavities; and 5) operating the phase of the accelerator cavities between -90 and zero degrees of the sinusoid of phase to simultaneously accelerate and bunch the charged particles to maximize brightness, and until the beam is relativistic and emittance-dominated.

High-power VCSELs for smart munitions

NASA Astrophysics Data System (ADS)

Geske, Jon; MacDougal, Michael; Cole, Garrett; Snyder, Donald

2006-08-01

The next generation of low-cost smart munitions will be capable of autonomously detecting and identifying targets aided partly by the ability to image targets with compact and robust scanning rangefinder and LADAR capabilities. These imaging systems will utilize arrays of high performance, low-cost semiconductor diode lasers capable of achieving high peak powers in pulses ranging from 5 to 25 nanoseconds in duration. Aerius Photonics is developing high-power Vertical-Cavity Surface-Emitting Lasers (VCSELs) to meet the needs of these smart munitions applications. The authors will report the results of Aerius' development program in which peak pulsed powers exceeding 60 Watts were demonstrated from single VCSEL emitters. These compact packaged emitters achieved pulse energies in excess of 1.5 micro-joules with multi kilo-hertz pulse repetition frequencies. The progress of the ongoing effort toward extending this performance to arrays of VCSEL emitters and toward further improving laser slope efficiency will be reported.

Physics Design Considerations for Diagnostic X Electron Beam Transport System

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Y-J

2000-04-10

The Diagnostic X (D-X) beamlines will transport the DARHT-II beam from the end of the accelerator to the Diagnostic X firing point providing four lines of sight for x-ray radiography. The design goal for the Diagnostic X beamline is to deliver four x-ray pulses with the DARHT-II dose format and time integrated spot size on each line of sight. The D-X beamline's final focus should be compatible with a range of first conjugates from 1 m-5 m. Furthermore, the D-X beamline operational parameters and the beamline layout should not preclude a possible upgrade to additional lines of sight. The DARHT-IImore » accelerator is designed to deliver beams at a rate of 1 pulse per minute or less. Tuning the D-X beamline with several hundred optical elements would be time consuming. Therefore, minimizing the required number of tuning shots for the D-X beamline is also an important design goal. Many different beamline configurations may be able to accomplish these design objectives, and high beam quality (i.e., high current and low emittance) must be maintained throughout the chosen beamline configuration in order to achieve the DARHT-II x-ray dose format. In general, the longer the distance a beam travels, the harder it is to preserve the beam quality. Therefore, from the point of view of maintaining beam quality, it is highly desirable to minimize the beamline length. Lastly, modification to the DARHT-II building and the downstream transport should be minimized. Several processes can degrade beam quality by increasing the beam emittance, increasing the time-varying transverse beam motion, creating a beam halo, or creating a time-varying beam envelope. In this report, we consider those processes in the passive magnet lattice beamline and indicate how they constrain the beamline design. The physics design considerations for the active components such as the kicker system will be discussed in Ref. 2. In Sec. I, we discuss how beam emittance affects the x-ray forward dose. We also establish a physics design goal for the emittance growth budget. In Sec. II, we discuss how the conductivity and size of the beam pipe affects the transverse beam motion. We also discuss the emittance growth arise from the beam centroid offset. In Sec. III, we discuss the background gas focusing effects and establish the vacuum requirements. In Sec. IV, we consider the emittance growth in a bend. In Sec. V, we discuss the misalignment and corkscrew motion. The design specifications for misalignment are established. In Secs. VI and VII, we discuss the design objectives on how to extract beams from the DARHT-II beamline and how to minimize the tuning shots. The integrated spot size and final focusing are discussed in Sec. VIII. A conclusion will be presented in Sec. IX.« less

Thermal Cycling of Thermal Control Paints on Carbon-Carbon and Carbon-Polyimide Composites

NASA Technical Reports Server (NTRS)

Jaworske, Donald A.

2006-01-01

Carbon-carbon composites and carbon-polyimide composites are being considered for space radiator applications owing to their light weight and high thermal conductivity. For those radiator applications where sunlight will impinge on the surface, it will be necessary to apply a white thermal control paint to minimize solar absorptance and enhance infrared emittance. Several currently available white thermal control paints were applied to candidate carbon-carbon and carbon-polyimide composites and were subjected to vacuum thermal cycling in the range of -100 C to +277 C. The optical properties of solar absorptance and infrared emittance were evaluated before and after thermal cycling. In addition, adhesion of the paints was evaluated utilizing a tape test. The test matrix included three composites: resin-derived carbon-carbon and vapor infiltrated carbon-carbon, both reinforced with pitch-based P-120 graphite fibers, and a polyimide composite reinforced with T-650 carbon fibers, and three commercially available white thermal control paints: AZ-93, Z-93-C55, and YB-71P.