Effects of soil water content on the external exposure of fauna to radioactive isotopes.

PubMed

Beaugelin-Seiller, K

2016-01-01

Within a recent model intercomparison about radiological risk assessment for contaminated wetlands, the influence of soil saturation conditions on external dose rates was evidenced. This issue joined concerns of assessors regarding the choice of the soil moisture value to input in radiological assessment tools such as the ERICA Tool. Does it really influence the assessment results and how? This question was investigated under IAEA's Modelling and Data for Radiological Impacts Assessments (MODARIA) programme via 42 scenarios for which the soil water content varied from 0 (dry soil) to 100% (saturated soil), in combination with other parameters that may influence the values of the external dose conversion coefficients (DCCs) calculated for terrestrial organisms exposed in soil. A set of α, β, and γ emitters was selected in order to cover the range of possible emission energies. The values of their external DCCs varied generally within a factor 1 to 1.5 with the soil water content, excepted for β emitters that appeared more sensitive (DCCs within a factor of about 3). This may be of importance for some specific cases or for upper tiers of radiological assessments, when refinement is required. But for the general purpose of screening assessment of radiological impact on fauna and flora, current approaches regarding the soil water content are relevant. Copyright © 2015 Elsevier Ltd. All rights reserved.

Effects of Thickness, Pulse Duration, and Size of Strip Electrode on Ferroelectric Electron Emission of Lead Zirconate Titanate Films

NASA Astrophysics Data System (ADS)

Yaseen, Muhammad; Ren, Wei; Chen, Xiaofeng; Feng, Yujun; Shi, Peng; Wu, Xiaoqing

2018-02-01

Sol-gel-derived lead zirconate titanate (PZT) thin-film emitters with thickness up to 9.8 μm have been prepared on Pt/TiO2/SiO2/Si wafer via chemical solution deposition with/without polyvinylpyrrolidone (PVP) modification, and the relationship between the film thickness and electron emission investigated. Notable electron emission was observed on application of a trigger voltage of 120 V for PZT film with thickness of 1.1 μm. Increasing the film thickness decreased the threshold field to initiate electron emission for non-PVP-modified films. In contrast, the electron emission behavior of PVP-modified films did not show significant dependence on film thickness, probably due to their porous structure. The emission current increased with decreasing strip width and space between strips. Furthermore, it was observed that increasing the duration of the applied pulse increased the magnitude of the emission current. The stray field on the PZT film thickness was also calculated and found to increase with increasing ferroelectric sample thickness. The PZT emitters were found to be fatigue free up to 105 emission cycles. Saturated emission current of around 25 mA to 30 mA was achieved for the electrode pattern used in this work.

Single Crystal Diamond Needle as Point Electron Source.

PubMed

Kleshch, Victor I; Purcell, Stephen T; Obraztsov, Alexander N

2016-10-12

Diamond has been considered to be one of the most attractive materials for cold-cathode applications during past two decades. However, its real application is hampered by the necessity to provide appropriate amount and transport of electrons to emitter surface which is usually achieved by using nanometer size or highly defective crystallites having much lower physical characteristics than the ideal diamond. Here, for the first time the use of single crystal diamond emitter with high aspect ratio as a point electron source is reported. Single crystal diamond needles were obtained by selective oxidation of polycrystalline diamond films produced by plasma enhanced chemical vapor deposition. Field emission currents and total electron energy distributions were measured for individual diamond needles as functions of extraction voltage and temperature. The needles demonstrate current saturation phenomenon and sensitivity of emission to temperature. The analysis of the voltage drops measured via electron energy analyzer shows that the conduction is provided by the surface of the diamond needles and is governed by Poole-Frenkel transport mechanism with characteristic trap energy of 0.2-0.3 eV. The temperature-sensitive FE characteristics of the diamond needles are of great interest for production of the point electron beam sources and sensors for vacuum electronics.

Single Crystal Diamond Needle as Point Electron Source

NASA Astrophysics Data System (ADS)

Kleshch, Victor I.; Purcell, Stephen T.; Obraztsov, Alexander N.

2016-10-01

Diamond has been considered to be one of the most attractive materials for cold-cathode applications during past two decades. However, its real application is hampered by the necessity to provide appropriate amount and transport of electrons to emitter surface which is usually achieved by using nanometer size or highly defective crystallites having much lower physical characteristics than the ideal diamond. Here, for the first time the use of single crystal diamond emitter with high aspect ratio as a point electron source is reported. Single crystal diamond needles were obtained by selective oxidation of polycrystalline diamond films produced by plasma enhanced chemical vapor deposition. Field emission currents and total electron energy distributions were measured for individual diamond needles as functions of extraction voltage and temperature. The needles demonstrate current saturation phenomenon and sensitivity of emission to temperature. The analysis of the voltage drops measured via electron energy analyzer shows that the conduction is provided by the surface of the diamond needles and is governed by Poole-Frenkel transport mechanism with characteristic trap energy of 0.2-0.3 eV. The temperature-sensitive FE characteristics of the diamond needles are of great interest for production of the point electron beam sources and sensors for vacuum electronics.

Highly efficient near-infrared light-emitting diodes by using type-II CdTe/CdSe core/shell quantum dots as a phosphor

NASA Astrophysics Data System (ADS)

Shen, Huaibin; Zheng, Ying; Wang, Hongzhe; Xu, Weiwei; Qian, Lei; Yang, Yixing; Titov, Alexandre; Hyvonen, Jake; Li, Lin Song

2013-11-01

In this paper, we present an innovative method for the synthesis of CdTe/CdSe type-II core/shell structure quantum dots (QDs) using ‘greener’ chemicals. The PL of CdTe/CdSe type-II core/shell structure QDs ranges from 600 to 820 nm, and the as-synthesized core/shell structures show narrow size distributions and stable and high quantum yields (50-75%). Highly efficient near-infrared light-emitting diodes (LEDs) have been demonstrated by employing the CdTe/CdSe type-II core/shell QDs as emitters. The devices fabricated based on these type-II core/shell QDs show color-saturated near-infrared emission from the QD layers, a low turn-on voltage of 1.55 V, an external quantum efficiency (EQE) of 1.59%, and a current density and maximum radiant emittance of 2.1 × 103 mA cm-2 and 17.7 mW cm-2 at 8 V it is the first report to use type-II core/shell QDs as near-infrared emitters and these results may offer a practicable platform for the realization of near-infrared QD-based light-emitting diodes, night-vision-readable displays, and friend/foe identification system.

Emitter utilization in heterojunction bipolar transistors

NASA Astrophysics Data System (ADS)

Quach, T.; Jenkins, T.; Barrette, J.; Bozada, C.; Cerny, C.; Desalvo, G.; Dettmer, R.; Ebel, J.; Gillespie, J.; Havasy, C.; Ito, C.; Nakano, K.; Pettiford, C.; Sewell, J.; Via, D.; Anholt, R.

1997-09-01

We compare measured collector current densities, cutoff frequencies ( ft), and transducer gains for thermally shunted heterojunction bipolar transistors with 2-16 μm emitter dot diameters or 2-8 μm emitter bar widths with models of the emitter utilization factors. Models that do not take emitter resistance into account predict that the d.c. utilization factors are below 0.7 for collector current densities greater than 6 × 10 4 A cm -2 and emitter diameters or widths greater than 8 μm. However, because the current gains are compressed by the emitter resistances at those current densities, the measured utilization factors are close to 1, which agrees with models that include emitter resistance. A.c. utilization factors are evident in the transistor Y parameters. For example, Re|Y 21z.sfnc drops off at high frequencies more steeply in HBTs with large emitter diameters or widths than in small ones. However, measured data shows that the HBT a.c. current gains h21 or ft values are not influenced by the a.c. utilization factor. A.c. utilization effects on HBT performance parameters such as small signal and power gains, output power, and power added efficiency are also examined.

A future, intense source of negative hydrogen ions

NASA Technical Reports Server (NTRS)

Siefken, Hugh; Stein, Charles

1994-01-01

By directly heating lithium hydride in a vacuum, up to 18 micro-A/sq cm of negative hydrogen has been obtained from the crystal lattice. The amount of ion current extracted and analyzed is closely related to the temperature of the sample and to the rate at which the temperature is changed. The ion current appears to be emission limited and saturates with extraction voltage. For a fixed extraction voltage, the ion current could be maximized by placing a grid between the sample surface and the extraction electrode. Electrons accompanying the negative ions were removed by a magnetic trap. A Wein velocity filter was designed and built to provide definitive mass analysis of the extracted ion species. This technique when applied to other alkali hydrides may produce even higher intensity beams possessing low values of emittance.

Thermionic gas switch

DOEpatents

Hatch, George L.; Brummond, William A.; Barrus, Donald M.

1986-01-01

A temperature responsive thermionic gas switch having folded electron emitting surfaces. An ionizable gas is located between the emitter and an interior surface of a collector, coaxial with the emitter. In response to the temperature exceeding a predetermined level, sufficient electrons are derived from the emitter to cause the gas in the gap between the emitter and collector to become ionized, whereby a very large increase in current in the gap occurs. Due to the folded emitter surface area of the switch, increasing the "on/off" current ratio and adjusting the "on" current capacity is accomplished.

Space charge effects on the current-voltage characteristics of gated field emitter arrays

NASA Astrophysics Data System (ADS)

Jensen, K. L.; Kodis, M. A.; Murphy, R. A.; Zaidman, E. G.

1997-07-01

Microfabricated field emitter arrays (FEAs) can provide the very high electron current densities required for rf amplifier applications, typically on the order of 100 A/cm2. Determining the dependence of emission current on gate voltage is important for the prediction of emitter performance for device applications. Field emitters use high applied fields to extract current, and therefore, unlike thermionic emitters, the current densities can exceed 103A/cm2 when averaged over an array. At such high current densities, space charge effects (i.e., the influence of charge between cathode and collector on emission) affect the emission process or initiate conditions which can lead to failure mechanisms for field emitters. A simple model of a field emitter will be used to calculate the one-dimensional space charge effects on the emission characteristics by examining two components: charge between the gate and anode, which leads to Child's law, and charge within the FEA unit cell, which gives rise to a field suppression effect which can exist for a single field emitter. The predictions of the analytical model are compared with recent experimental measurements designed to assess space charge effects and predict the onset of gate current. It is shown that negative convexity on a Fowler-Nordheim plot of Ianode(Vgate) data can be explained in terms of field depression at the emitter tip in addition to reflection of electrons by a virtual cathode created when the anode field is insufficient to extract all of the current; in particular, the effects present within the unit cell constitute a newly described effect.

Beam Conditioning for FELs: Consequences and Methods

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wolski, Andrzej; Penn, Gregory; Sessler, Andrew

2003-10-09

The consequences of beam conditioning in four example cases (VISA, a Soft X-Ray FEL, LCLS and a ''Greenfield'' FEL) are examined. It is shown that in emittance limited cases, proper conditioning reduces sensitivity to the transverse emittance, and allows stronger focusing in the undulator. Simulations show higher saturation power, with gain lengths reduced up to a factor of two. The beam dynamics in a general conditioning system are studied, with ''matching conditions'' derived for achieving conditioning without growth in effective emittance. Various conditioners are considered, and expressions derived for the amount of conditioning provided in each case when the matchingmore » conditions are satisfied. We discuss the prospects for conditioners based on laser and plasma systems.« less

All Solution-processed Stable White Quantum Dot Light-emitting Diodes with Hybrid ZnO@TiO2 as Blue Emitters

PubMed Central

Chen, Jing; Zhao, Dewei; Li, Chi; Xu, Feng; Lei, Wei; Sun, Litao; Nathan, Arokia; Sun, Xiao Wei

2014-01-01

White quantum dot light-emitting diodes (QD-LEDs) have been a promising candidate for high-efficiency and color-saturated displays. However, it is challenging to integrate various QD emitters into one device and also to obtain efficient blue QDs. Here, we report a simply solution-processed white QD-LED using a hybrid ZnO@TiO2 as electron injection layer and ZnCdSeS QD emitters. The white emission is obtained by integrating the yellow emission from QD emitters and the blue emission generated from hybrid ZnO@TiO2 layer. We show that the performance of white QD-LEDs can be adjusted by controlling the driving force for hole transport and electroluminescence recombination region via varying the thickness of hole transport layer. The device is demonstrated with a maximum luminance of 730 cd/m2 and power efficiency of 1.7 lm/W, exhibiting the Commission Internationale de l'Enclairage (CIE) coordinates of (0.33, 0.33). The unencapsulated white QD-LED has a long lifetime of 96 h at its initial luminance of 730 cd/m2, primarily due to the fact that the device with hybrid ZnO@TiO2 has low leakage current and is insensitive to the oxygen and the moisture. These results indicate that hybrid ZnO@TiO2 provides an alternate and effective approach to achieve high-performance white QD-LEDs and also other optoelectronic devices. PMID:24522341

Solid-state current transformer

NASA Technical Reports Server (NTRS)

Farnsworth, D. L. (Inventor)

1976-01-01

A signal transformation network which is uniquely characterized to exhibit a very low input impedance while maintaining a linear transfer characteristic when driven from a voltage source and when quiescently biased in the low microampere current range is described. In its simplest form, it consists of a tightly coupled two transistor network in which a common emitter input stage is interconnected directly with an emitter follower stage to provide virtually 100 percent negative feedback to the base input of the common emitter stage. Bias to the network is supplied via the common tie point of the common emitter stage collector terminal and the emitter follower base stage terminal by a regulated constant current source, and the output of the circuit is taken from the collector of the emitter follower stage.

Close proximity electrostatic effect from small clusters of emitters

NASA Astrophysics Data System (ADS)

Dall'Agnol, Fernando F.; de Assis, Thiago A.

2017-10-01

Using a numerical simulation based on the finite-element technique, this work investigates the field emission properties from clusters of a few emitters at close proximity, by analyzing the properties of the maximum local field enhancement factor (γm ) and the corresponding emission current. At short distances between the emitters, we show the existence of a nonintuitive behavior, which consists of the increasing of γm as the distance c between the emitters decreases. Here we investigate this phenomenon for clusters with 2, 3, 4 and 7 identical emitters and study the influence of the proximity effect in the emission current, considering the role of the aspect ratio of the individual emitters. Importantly, our results show that peripheral emitters with high aspect-ratios in large clusters can, in principle, significantly increase the emitted current as a consequence only of the close proximity electrostatic effect (CPEE). This phenomenon can be seen as a physical mechanism to produce self-oscillations of individual emitters. We discuss new insights for understanding the nature of self-oscillations in emitters based on the CPEE, including applications to nanometric oscillators.

Single Crystal Diamond Needle as Point Electron Source

PubMed Central

Kleshch, Victor I.; Purcell, Stephen T.; Obraztsov, Alexander N.

2016-01-01

Diamond has been considered to be one of the most attractive materials for cold-cathode applications during past two decades. However, its real application is hampered by the necessity to provide appropriate amount and transport of electrons to emitter surface which is usually achieved by using nanometer size or highly defective crystallites having much lower physical characteristics than the ideal diamond. Here, for the first time the use of single crystal diamond emitter with high aspect ratio as a point electron source is reported. Single crystal diamond needles were obtained by selective oxidation of polycrystalline diamond films produced by plasma enhanced chemical vapor deposition. Field emission currents and total electron energy distributions were measured for individual diamond needles as functions of extraction voltage and temperature. The needles demonstrate current saturation phenomenon and sensitivity of emission to temperature. The analysis of the voltage drops measured via electron energy analyzer shows that the conduction is provided by the surface of the diamond needles and is governed by Poole-Frenkel transport mechanism with characteristic trap energy of 0.2–0.3 eV. The temperature-sensitive FE characteristics of the diamond needles are of great interest for production of the point electron beam sources and sensors for vacuum electronics. PMID:27731379

Emittance measurements in Grumman 1 MeV beamline

DOE Office of Scientific and Technical Information (OSTI.GOV)

Debiak, T.; Gammel, G.; Melnychuk, S.

1992-12-01

The emittance of a 30 keV H{sup {minus}} beam has been measured with an Allison type electrostatic analyser at two positions separated by 85 cm along the Grumman 1 MeV beamline LEBT at low currents (about 4 mA, no Cs{sub 2}O additive in the source) and at higher currents (10-15 mA, with Cs{sub 2}O additive in the source). No emittance growth was observed between the two positions, but, at the higher current level, the emittance was about 60% higher than at the low current level ({Sigma}{sub n},rms = .0045 {pi} cm-mrad vs. 0070 {pi} cm-mrad). Argon was then introduced upmore » to a partial pressure of 4x10{sup {minus}5} torr, and the emittance decreased back to a range corresponding to that found at the lower currents. However, beam noise was observed at the downstream position, and there is evidence for a small amount of emittance growth (<20%) between the two positions.« less

Experimental Study of Coherent Synchrotron Radiation in the Emittance Exchange Line at the A0-Photoinjector

NASA Astrophysics Data System (ADS)

Thangaraj, Jayakar C. T.; Thurman-Keup, R.; Johnson, A.; Lumpkin, A. H.; Edwards, H.; Ruan, J.; Santucci, J.; Sun, Y. E.; Church, M.; Piot, P.

2010-11-01

Next generation accelerators will require a high current, low emittance beam with a low energy spread. Such accelerators will employ advanced beam conditioning systems such as emittance exchangers to manipulate high brightness beams. One of the goals of the Fermilab A0 photoinjector is to investigate the transverse to longitudinal emittance exchange principle. Coherent synchrotron radiation could limit high current operation of the emittance exchanger. In this paper, we report on the preliminary experimental and simulation study of the coherent synchroton radiation (CSR) in the emittance exchange line at the A0 photoinjector.

Tunable and high-purity room temperature single-photon emission from atomic defects in hexagonal boron nitride

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grosso, Gabriele; Moon, Hyowon; Lienhard, Benjamin

Two-dimensional van der Waals materials have emerged as promising platforms for solid-state quantum information processing devices with unusual potential for heterogeneous assembly. Recently, bright and photostable single photon emitters were reported from atomic defects in layered hexagonal boron nitride (hBN), but controlling inhomogeneous spectral distribution and reducing multi-photon emission presented open challenges. Here, we demonstrate that strain control allows spectral tunability of hBN single photon emitters over 6 meV, and material processing sharply improves the single photon purity. We observe high single photon count rates exceeding 7 × 10 6 counts per second at saturation, after correcting for uncorrelated photonmore » background. Furthermore, these emitters are stable to material transfer to other substrates. High-purity and photostable single photon emission at room temperature, together with spectral tunability and transferability, opens the door to scalable integration of high-quality quantum emitters in photonic quantum technologies.« less

Method and apparatus utilizing ionizing and microwave radiation for saturation determination of water, oil and a gas in a core sample

DOEpatents

Maerefat, Nicida L.; Parmeswar, Ravi; Brinkmeyer, Alan D.; Honarpour, Mehdi

1994-01-01

A system for determining the relative permeabilities of gas, water and oil in a core sample has a microwave emitter/detector subsystem and an X-ray emitter/detector subsystem. A core holder positions the core sample between microwave absorbers which prevent diffracted microwaves from reaching a microwave detector where they would reduce the signal-to-noise ratio of the microwave measurements. The microwave emitter/detector subsystem and the X-ray emitter/detector subsystem each have linear calibration characteristics, allowing one subsystem to be calibrated with respect to the other subsystem. The dynamic range of microwave measurements is extended through the use of adjustable attenuators. This also facilitates the use of core samples with wide diameters. The stratification characteristics of the fluids may be observed with a windowed cell separator at the outlet of the core sample. The condensation of heavy hydrocarbon gas and the dynamic characteristics of the fluids are observed with a sight glass at the outlet of the core sample.

Tunable and high-purity room temperature single-photon emission from atomic defects in hexagonal boron nitride

DOE PAGES

Grosso, Gabriele; Moon, Hyowon; Lienhard, Benjamin; ...

2017-09-26

Two-dimensional van der Waals materials have emerged as promising platforms for solid-state quantum information processing devices with unusual potential for heterogeneous assembly. Recently, bright and photostable single photon emitters were reported from atomic defects in layered hexagonal boron nitride (hBN), but controlling inhomogeneous spectral distribution and reducing multi-photon emission presented open challenges. Here, we demonstrate that strain control allows spectral tunability of hBN single photon emitters over 6 meV, and material processing sharply improves the single photon purity. We observe high single photon count rates exceeding 7 × 10 6 counts per second at saturation, after correcting for uncorrelated photonmore » background. Furthermore, these emitters are stable to material transfer to other substrates. High-purity and photostable single photon emission at room temperature, together with spectral tunability and transferability, opens the door to scalable integration of high-quality quantum emitters in photonic quantum technologies.« less

Source brightness and useful beam current of carbon nanotubes and other very small emitters

NASA Astrophysics Data System (ADS)

Kruit, P.; Bezuijen, M.; Barth, J. E.

2006-01-01

The potential application of carbon nanotubes as electron sources in electron microscopes is analyzed. The resolution and probe current that can be obtained from a carbon nanotube emitter in a low-voltage scanning electron microscope are calculated and compared to the state of the art using Schottky electron sources. Many analytical equations for probe-size versus probe-current relations in different parameter regimes are obtained. It is shown that for most carbon nanotube emitters, the gun lens aberrations are larger than the emitters' virtual source size and thus restrict the microscope's performance. The result is that the advantages of the higher brightness of nanotube emitters are limited unless the angular emission current is increased over present day values or the gun lens aberrations are decreased. For some nanotubes with a closed cap, it is known that the emitted electron beam is coherent over the full emission cone. We argue that for such emitters the parameter ``brightness'' becomes meaningless. The influence of phase variations in the electron wave front emitted from such a nanotube emitter on the focusing of the electron beam is analyzed.

Current gain above 10 in sub-10 nm base III-Nitride tunneling hot electron transistors with GaN/AlN emitter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Zhichao, E-mail: zcyang.phys@gmail.com; Zhang, Yuewei; Krishnamoorthy, Sriram

We report on a tunneling hot electron transistor amplifier with common-emitter current gain greater than 10 at a collector current density in excess of 40 kA/cm{sup 2}. The use of a wide-bandgap GaN/AlN (111 nm/2.5 nm) emitter was found to greatly improve injection efficiency of the emitter and reduce cold electron leakage. With an ultra-thin (8 nm) base, 93% of the injected hot electrons were collected, enabling a common-emitter current gain up to 14.5. This work improves understanding of the quasi-ballistic hot electron transport and may impact the development of high speed devices based on unipolar hot electron transport.

Field emission electron source

DOEpatents

Zettl, Alexander Karlwalter; Cohen, Marvin Lou

2000-01-01

A novel field emitter material, field emission electron source, and commercially feasible fabrication method is described. The inventive field emission electron source produces reliable electron currents of up to 400 mA/cm.sup.2 at 200 volts. The emitter is robust and the current it produces is not sensitive to variability of vacuum or the distance between the emitter tip and the cathode. The novel emitter has a sharp turn-on near 100 volts.

High temperature bias line stabilized current sources

DOEpatents

Patterson, III, Raymond B.

1984-01-01

A compensation device for the base of emitter follower configured bipolar transistors becoming operable at elevated temperatures including a bipolar transistor of a geometry of not more than half the geometry of the bipolar emitter follower having its collector connected to the base of the emitter follower and its base and emitter connected together and to the emitter of the emitter follower.

High temperature bias line stabilized current sources

DOEpatents

Patterson, R.B. III.

1984-09-11

A compensation device for the base of emitter follower configured bipolar transistors becoming operable at elevated temperatures including a bipolar transistor of a geometry of not more than half the geometry of the bipolar emitter follower having its collector connected to the base of the emitter follower and its base and emitter connected together and to the emitter of the emitter follower. 1 fig.

A read-in IC for infrared scene projectors with voltage drop compensation for improved uniformity of emitter current

NASA Astrophysics Data System (ADS)

Cho, Min Ji; Shin, Uisub; Lee, Hee Chul

2017-05-01

This paper proposes a read-in integrated circuit (RIIC) for infrared scene projectors, which compensates for the voltage drops in ground lines in order to improve the uniformity of the emitter current. A current output digital-to-analog converter is utilized to convert digital scene data into scene data currents. The unit cells in the array receive the scene data current and convert it into data voltage, which simultaneously self-adjusts to account for the voltage drop in the ground line in order to generate the desired emitter current independently of variations in the ground voltage. A 32 × 32 RIIC unit cell array was designed and fabricated using a 0.18-μm CMOS process. The experimental results demonstrate that the proposed RIIC can output a maximum emitter current of 150 μA and compensate for a voltage drop in the ground line of up to 500 mV under a 3.3-V supply. The uniformity of the emitter current is significantly improved compared to that of a conventional RIIC.

Field emission characteristics of a small number of carbon fiber emitters

NASA Astrophysics Data System (ADS)

Tang, Wilkin W.; Shiffler, Donald A.; Harris, John R.; Jensen, Kevin L.; Golby, Ken; LaCour, Matthew; Knowles, Tim

2016-09-01

This paper reports an experiment that studies the emission characteristics of small number of field emitters. The experiment consists of nine carbon fibers in a square configuration. Experimental results show that the emission characteristics depend strongly on the separation between each emitter, providing evidence of the electric field screening effects. Our results indicate that as the separation between the emitters decreases, the emission current for a given voltage also decreases. The authors compare the experimental results to four carbon fiber emitters in a linear and square configurations as well as to two carbon fiber emitters in a paired array. Voltage-current traces show that the turn-on voltage is always larger for the nine carbon fiber emitters as compared to the two and four emitters in linear configurations, and approximately identical to the four emitters in a square configuration. The observations and analysis reported here, based on Fowler-Nordheim field emission theory, suggest the electric field screening effect depends critically on the number of emitters, the separation between them, and their overall geometric configuration.

Development and Testing of High Current Hollow Cathodes for High Power Hall Thrusters

NASA Technical Reports Server (NTRS)

Kamhawi, Hani; Van Noord, Jonathan

2012-01-01

NASA's Office of the Chief Technologist In-Space Propulsion project is sponsoring the testing and development of high power Hall thrusters for implementation in NASA missions. As part of the project, NASA Glenn Research Center is developing and testing new high current hollow cathode assemblies that can meet and exceed the required discharge current and life-time requirements of high power Hall thrusters. This paper presents test results of three high current hollow cathode configurations. Test results indicated that two novel emitter configurations were able to attain lower peak emitter temperatures compared to state-of-the-art emitter configurations. One hollow cathode configuration attained a cathode orifice plate tip temperature of 1132 degC at a discharge current of 100 A. More specifically, test and analysis results indicated that a novel emitter configuration had minimal temperature gradient along its length. Future work will include cathode wear tests, and internal emitter temperature and plasma properties measurements along with detailed physics based modeling.

Emission current formation in plasma electron emitters

NASA Astrophysics Data System (ADS)

Gruzdev, V. A.; Zalesski, V. G.

2010-12-01

A model of the plasma electron emitter is considered, in which the current redistribution over electrodes of the emitter gas-discharge structure and weak electric field formation in plasma are taken into account as functions of the emission current. The calculated and experimental dependences of the switching parameters, extraction efficiency, and strength of the electric field in plasma on the accelerating voltage and geometrical sizes of the emission channel are presented.

Method and apparatus utilizing ionizing and microwave radiation for saturation determination of water, oil and a gas in a core sample

DOEpatents

Maerefat, N.L.; Parmeswar, R.; Brinkmeyer, A.D.; Honarpour, M.

1994-08-23

A system is described for determining the relative permeabilities of gas, water and oil in a core sample has a microwave emitter/detector subsystem and an X-ray emitter/detector subsystem. A core holder positions the core sample between microwave absorbers which prevent diffracted microwaves from reaching a microwave detector where they would reduce the signal-to-noise ratio of the microwave measurements. The microwave emitter/detector subsystem and the X-ray emitter/detector subsystem each have linear calibration characteristics, allowing one subsystem to be calibrated with respect to the other subsystem. The dynamic range of microwave measurements is extended through the use of adjustable attenuators. This also facilitates the use of core samples with wide diameters. The stratification characteristics of the fluids may be observed with a windowed cell separator at the outlet of the core sample. The condensation of heavy hydrocarbon gas and the dynamic characteristics of the fluids are observed with a sight glass at the outlet of the core sample. 11 figs.

Beam conditioning for FELs: Consequences and methods

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wolski, A.; Penn, G.; Sessler, A.

2004-06-29

The consequences of beam conditioning in four example cases (VISA, a Soft X-Ray FEL, LCLS and a ''Greenfield'' FEL) are examined. It is shown that in emittance limited cases, proper conditioning reduces sensitivity to the transverse emittance and, furthermore, allows for stronger focusing in the undulator. Simulations show higher saturation power, with gain lengths reduced by a factor of two or more. The beam dynamics in a general conditioning system are studied, with ''matching conditions'' derived for achieving conditioning without growth in the effective emittance. Various conditioning lattices are considered, and expressions derived for the amount of conditioning provided inmore » each case when the matching conditions are satisfied. These results show that there is no fundamental obstacle to producing beam conditioning, and that the problem can be reduced to one of proper lattice design. Nevertheless, beam conditioning will not be easy to implement in practice.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wolski, A.; Penn, G.; Sessler, A.

The consequences of beam conditioning in four example cases [VISA, a soft x-ray free-electron laser (FEL), LCLS, and a 'Greenfield' FEL] are examined. It is shown that in emittance limited cases, proper conditioning reduces sensitivity to the transverse emittance and, furthermore, allows for stronger focusing in the undulator. Simulations show higher saturation power, with gain lengths reduced by a factor of 2 or more. The beam dynamics in a general conditioning system are studied, with 'matching conditions' derived for achieving conditioning without growth in the effective emittance. Various conditioning lattices are considered, and expressions derived for the amount of conditioningmore » provided in each case when the matching conditions are satisfied. These results show that there is no fundamental obstacle to producing beam conditioning, and that the problem can be reduced to one of proper lattice design. Nevertheless, beam conditioning will not be easy to implement in practice.« less

Shielding in ungated field emitter arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Harris, J. R.; Jensen, K. L.; Shiffler, D. A.

Cathodes consisting of arrays of high aspect ratio field emitters are of great interest as sources of electron beams for vacuum electronic devices. The desire for high currents and current densities drives the cathode designer towards a denser array, but for ungated emitters, denser arrays also lead to increased shielding, in which the field enhancement factor β of each emitter is reduced due to the presence of the other emitters in the array. To facilitate the study of these arrays, we have developed a method for modeling high aspect ratio emitters using tapered dipole line charges. This method can bemore » used to investigate proximity effects from similar emitters an arbitrary distance away and is much less computationally demanding than competing simulation approaches. Here, we introduce this method and use it to study shielding as a function of array geometry. Emitters with aspect ratios of 10{sup 2}–10{sup 4} are modeled, and the shielding-induced reduction in β is considered as a function of tip-to-tip spacing for emitter pairs and for large arrays with triangular and square unit cells. Shielding is found to be negligible when the emitter spacing is greater than the emitter height for the two-emitter array, or about 2.5 times the emitter height in the large arrays, in agreement with previously published results. Because the onset of shielding occurs at virtually the same emitter spacing in the square and triangular arrays, the triangular array is preferred for its higher emitter density at a given emitter spacing. The primary contribution to shielding in large arrays is found to come from emitters within a distance of three times the unit cell spacing for both square and triangular arrays.« less

Emittance measurements of the CLIO electron beam

NASA Astrophysics Data System (ADS)

Chaput, R.; Devanz, G.; Joly, P.; Kergosien, B.; Lesrel, J.

1997-02-01

We have designed a setup to measure the transverse emittance at the CLIO accelerator exit, based on the "3 gradients" method. The beam transverse size is measured simply by scanning it with a steering coil across a fixed jaw and recording the transmitted current, at various quadrupole strengths. A code then performs a complete calculation of the emittance using the transfer matrix of the quadrupole instead of the usual classical lens approximation. We have studied the influence of various parameters on the emittance: Magnetic field on the e-gun and the peak current. We have also improved a little the emittance by replacing a mismatched pipe between the buncher and accelerating section to avoid wake-field effects; The resulting improvements of the emittance have led to an increase in the FEL emitted power.

Current-horn suppression for reduced coherent-synchrotron-radiation-induced emittance growth in strong bunch compression

NASA Astrophysics Data System (ADS)

Charles, T. K.; Paganin, D. M.; Latina, A.; Boland, M. J.; Dowd, R. T.

2017-03-01

Control of coherent synchrotron radiation (CSR)-induced emittance growth is essential in linear accelerators designed to deliver very high brightness electron beams. Extreme current values at the head and tail of the electron bunch, resulting from strong bunch compression, are responsible for large CSR production leading to significant transverse projected emittance growth. The Linac Coherent Light Source (LCLS) truncates the head and tail current spikes which greatly improves free electron laser (FEL) performance. Here we consider the underlying dynamics that lead to formation of current spikes (also referred to as current horns), which has been identified as caustics forming in electron trajectories. We present a method to analytically determine conditions required to avoid the caustic formation and therefore prevent the current spikes from forming. These required conditions can be easily met, without increasing the transverse slice emittance, through inclusion of an octupole magnet in the middle of a bunch compressor.

The anodic emitter effect and its inversion demonstrated by temperature measurements at doped and undoped tungsten electrodes

NASA Astrophysics Data System (ADS)

Hoebing, T.; Bergner, A.; Hermanns, P.; Mentel, J.; Awakowicz, P.

2016-04-01

The admixture of a small amount of emitter oxides, e.g. \\text{Th}{{\\text{O}}2} , \\text{L}{{\\text{a}}2}{{\\text{O}}3} or \\text{C}{{\\text{e}}2}{{\\text{O}}3} to tungsten generates the so-called emitter effect. It reduces the work function of tungsten cathodes, that are applied in high intensity discharge (HID) lamps. After leaving the electrode bulk and moving to the surface, a monolayer of Th, La, or Ce atoms is formed on the surface, which reduces the effective work function ϕ. Depending on the coverage of the electrode, the effective reduction in ϕ is subjected to the thermal desorption of the monolayer from the hot electrode surface. The thermal desorption of emitter atoms from the cathode is compensated not only by the supply from the interior of the electrode and by surface diffusion of the emitter material to its tip, but also to a large extent by a repatriation of the emitter ions from the plasma by the strong electric field in front of the cathode. Yet, an emitter ion current from the arc discharge to the anode may only be present, if the anode is cold enough to refrain from thermionic emission. Therefore, the ability of emitter oxides to reduce the temperature of tungsten anodes is only given for a moderate temperature so that the thermal desorption is low and an additional ion current is present in front of the anode. A higher electrode temperature leads to their evaporation and to an inversion of the emitter effect, which increases the temperature of the respective anodes in comparison with pure tungsten anodes. Within this article, the emitter effect of doped tungsten anodes and the transition to its inversion is investigated for thoriated, lanthanated, and ceriated tungsten electrodes by measurements of the electrode temperature in dependence on the discharge current. It is shown for a lanthanated and a ceriated anode that the emitter effect is sustained by an ion current at anode temperatures at which the thermal evaporation of emitter material is completed.

A Robust High Current Density Electron Gun

NASA Astrophysics Data System (ADS)

Mako, F.; Peter, W.; Shiloh, J.; Len, L. K.

1996-11-01

Proof-of-principle experiments are proposed to validate a new concept for a robust, high-current density Pierce electron gun (RPG) for use in klystrons and high brightness electron sources for accelerators. This rugged, long-life electron gun avoids the difficulties associated with plasma cathodes, thermionic emitters, and field emission cathodes. The RPG concept employs the emission of secondary electrons in a transmission mode as opposed to the conventional mode of reflection, i.e., electrons exit from the back face of a thin negative electron affinity (NEA) material, and in the same direction as the incident beam. Current amplification through one stage of a NEA material could be over 50 times. The amplification is accomplished in one or more stages consisting of one primary emitter and one or more secondary emitters. The primary emitter is a low current density robust emitter (e.g., thoriated tungsten). The secondary emitters are thin NEA electrodes which emit secondary electrons in the same direction as the incident beam. Specific application is targeted for a klystron gun to be used by SLAC with a cold cathode at 30-40 amps/cm^2 output from the secondary emission stage, a ~2 μs pulse length, and ~200 pulses/second.

Performance characteristics of nanocrystalline diamond vacuum field emission transistor array

NASA Astrophysics Data System (ADS)

Hsu, S. H.; Kang, W. P.; Davidson, J. L.; Huang, J. H.; Kerns, D. V.

2012-06-01

Nitrogen-incorporated nanocrystalline diamond (ND) vacuum field emission transistor (VFET) with self-aligned gate is fabricated by mold transfer microfabrication technique in conjunction with chemical vapor deposition (CVD) of nanocrystalline diamond on emitter cavity patterned on silicon-on-insulator (SOI) substrate. The fabricated ND-VFET demonstrates gate-controlled emission current with good signal amplification characteristics. The dc characteristics of the ND-VFET show well-defined cutoff, linear, and saturation regions with low gate turn-on voltage, high anode current, negligible gate intercepted current, and large dc voltage gain. The ac performance of the ND-VFET is measured, and the experimental data are analyzed using a modified small signal circuit model. The experimental results obtained for the ac voltage gain are found to agree with the theoretical model. A higher ac voltage gain is attainable by using a better test setup to eliminate the associated parasitic capacitances. The paper reveals the amplifier characteristics of the ND-VFET for potential applications in vacuum microelectronics.

Performance characteristics of nanocrystalline diamond vacuum field emission transistor array

NASA Astrophysics Data System (ADS)

Hsu, S. H.; Kang, W. P.; Davidson, J. L.; Huang, J. H.; Kerns, D. V.

2012-05-01

Nitrogen-incorporated nanocrystalline diamond (ND) vacuum field emission transistor (VFET) with self-aligned gate is fabricated by mold transfer microfabrication technique in conjunction with chemical vapor deposition (CVD) of nanocrystalline diamond on emitter cavity patterned on silicon-on-insulator (SOI) substrate. The fabricated ND-VFET demonstrates gate-controlled emission current with good signal amplification characteristics. The dc characteristics of the ND-VFET show well-defined cutoff, linear, and saturation regions with low gate turn-on voltage, high anode current, negligible gate intercepted current, and large dc voltage gain. The ac performance of the ND-VFET is measured, and the experimental data are analyzed using a modified small signal circuit model. The experimental results obtained for the ac voltage gain are found to agree with the theoretical model. A higher ac voltage gain is attainable by using a better test setup to eliminate the associated parasitic capacitances. The paper reveals the amplifier characteristics of the ND-VFET for potential applications in vacuum microelectronics.

Emittance Theory for Thin Film Selective Emitter

NASA Technical Reports Server (NTRS)

Chubb, Donald L.; Lowe, Roland A.; Good, Brian S.

1994-01-01

Thin films of high temperature garnet materials such as yttrium aluminum garnet (YAG) doped with rare earths are currently being investigated as selective emitters. This paper presents a radiative transfer analysis of the thin film emitter. From this analysis the emitter efficiency and power density are calculated. Results based on measured extinction coefficients for erbium-YAG and holmium-YAG are presented. These results indicated that emitter efficiencies of 50 percent and power densities of several watts/sq cm are attainable at moderate temperatures (less than 1750 K).

Field emission from optimized structure of carbon nanotube field emitter array

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chouhan, V., E-mail: vchouhan@post.kek.jp, E-mail: vijaychouhan84@gmail.com; Noguchi, T.; Kato, S.

The authors report a detail study on the emission properties of field emitter array (FEA) of micro-circular emitters of multiwall carbon nanotubes (CNTs). The FEAs were fabricated on patterned substrates prepared with an array of circular titanium (Ti) islands on titanium nitride coated tantalum substrates. CNTs were rooted into these Ti islands to prepare an array of circular emitters. The circular emitters were prepared in different diameters and pitches in order to optimize their structure for acquiring a high emission current. The pitch was varied from 0 to 600 μm, while a diameter of circular emitters was kept constant to bemore » 50 μm in order to optimize a pitch. For diameter optimization, a diameter was changed from 50 to 200 μm while keeping a constant edge-to-edge distance of 150 μm between the circular emitters. The FEA with a diameter of 50 μm and a pitch of 120 μm was found to be the best to achieve an emission current of 47 mA corresponding to an effective current density of 30.5 A/cm{sup 2} at 7 V/μm. The excellent emission current was attributed to good quality of CNT rooting into the substrate and optimized FEA structure, which provided a high electric field on a whole circular emitter of 50 μm and the best combination of the strong edge effect and CNT coverage. The experimental results were confirmed with computer simulation.« less

High current gain transistor laser

PubMed Central

Liang, Song; Qiao, Lijun; Zhu, Hongliang; Wang, Wei

2016-01-01

A transistor laser (TL), having the structure of a transistor with multi-quantum wells near its base region, bridges the functionality gap between lasers and transistors. However, light emission is produced at the expense of current gain for all the TLs reported up to now, leading to a very low current gain. We propose a novel design of TLs, which have an n-doped InP layer inserted in the emitter ridge. Numerical studies show that a current flow aperture for only holes can be formed in the center of the emitter ridge. As a result, the common emitter current gain can be as large as 143.3, which is over 15 times larger than that of a TL without the aperture. Besides, the effects of nonradiative recombination defects can be reduced greatly because the flow of holes is confined in the center region of the emitter ridge. PMID:27282466

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Zhichao, E-mail: zcyang.phys@gmail.com; Zhang, Yuewei; Nath, Digbijoy N.

We report on Gallium Nitride-based tunneling hot electron transistor amplifier with common-emitter current gain greater than 1. Small signal current gain up to 5 and dc current gain of 1.3 were attained in common-emitter configuration with collector current density in excess of 50 kA/cm{sup 2}. The use of a combination of 1 nm GaN/3 nm AlN layers as an emitter tunneling barrier was found to improve the energy collimation of the injected electrons. These results represent demonstration of unipolar vertical transistors in the III-nitride system that can potentially lead to higher frequency and power microwave devices.

On the wide-range bias dependence of transistor d.c. and small-signal current gain factors.

NASA Technical Reports Server (NTRS)

Schmidt, P.; Das, M. B.

1972-01-01

Critical reappraisal of the bias dependence of the dc and small-signal ac current gain factors of planar bipolar transistors over a wide range of currents. This is based on a straightforward consideration of the three basic components of the dc base current arising due to emitter-to-base injected minority carrier transport, base-to-emitter carrier injection, and emitter-base surface depletion layer recombination effects. Experimental results on representative n-p-n and p-n-p silicon devices are given which support most of the analytical findings.

Thermal emittance enhancement of graphite-copper composites for high temperature space based radiators

NASA Technical Reports Server (NTRS)

Rutledge, Sharon K.; Forkapa, Mark J.; Cooper, Jill M.

1991-01-01

Graphite-copper composites are candidate materials for space based radiators. The thermal emittance of this material, however, is a factor of two lower than the desired emittance for these systems of greater than or equal to 0.85. Arc texturing was investigated as a surface modification technique for enhancing the emittance of the composite. Since the outer surface of the composite is copper, and samples of the composite could not be readily obtained for testing, copper was used for optimization testing. Samples were exposed to various frequencies and currents of arcs during texturing. Emittances near the desired goal were achieved at frequencies less than 500 Hz. Arc current did not appear to play a major role under 15 amps. Particulate carbon was observed on the surface, and was easily removed by vibration and handling. In order to determine morphology adherence, ultrasonic cleaning was used to remove the loosely adherent material. This reduced the emittance significantly. Emittance was found to increase with increasing frequency for the cleaned samples up to 500 Hz. The highest emittance achieved on these samples over the temperature range of interest was 0.5 to 0.6, which is approximately a factor of 25 increase over the untextured copper emittance.

Investigation of spectral characteristics of tunnel photodiodes based on DLC nanofilms

NASA Astrophysics Data System (ADS)

Akchurin, Garif G.; Aban'shin, Nickolay P.; Avetisyan, Yuri A.; Akchurin, Georgy G.; Kochubey, Vyacheslav I.; Yakunin, Alexander N.

2018-04-01

The tunneling photo effect has been studied in a microdiode with an electrostatic field localized at an emitter based on a nanosized DLC structure. It is established the photocurrent, when the carbon nanoemitter is exposed by laser and tunable low-coherent radiation in the spectral range from UV to near IR with photons of low energy (below work function). A linear dependence of the photocurrent on the level of optical power in the range of micro- and milliwatt power is established. The effect of saturation of the current-voltage characteristics of the tunnel photocurrent associated with a finite concentration of non-equilibrium photoelectrons is observed. The observed spectral Watt-Amper characteristics can be adequately interpreted using a modified Fowler-Nordheim equation for non-equilibrium photoelectrons.

Localization of Narrowband Single Photon Emitters in Nanodiamonds.

PubMed

Bray, Kerem; Sandstrom, Russell; Elbadawi, Christopher; Fischer, Martin; Schreck, Matthias; Shimoni, Olga; Lobo, Charlene; Toth, Milos; Aharonovich, Igor

2016-03-23

Diamond nanocrystals that host room temperature narrowband single photon emitters are highly sought after for applications in nanophotonics and bioimaging. However, current understanding of the origin of these emitters is extremely limited. In this work, we demonstrate that the narrowband emitters are point defects localized at extended morphological defects in individual nanodiamonds. In particular, we show that nanocrystals with defects such as twin boundaries and secondary nucleation sites exhibit narrowband emission that is absent from pristine individual nanocrystals grown under the same conditions. Critically, we prove that the narrowband emission lines vanish when extended defects are removed deterministically using highly localized electron beam induced etching. Our results enhance the current understanding of single photon emitters in diamond and are directly relevant to fabrication of novel quantum optics devices and sensors.

Electrospray performance of interacting multi-capillary emitters in a linear array

NASA Astrophysics Data System (ADS)

Kumar, V.; Srivastava, A.; Shanbhogue, K. M.; Ingersol, S.; Sen, A. K.

2018-03-01

Here, we report electrospray performance of multiple emitters (of internal diameter 200 µm) arranged in a linear (inline) array. For a fixed flow rate Q , at higher voltages {{V}a} , multi-jet mode is observed, which leads to a rapid increase in the spray current (I∼ {{V}a} ) as compared to the single cone-jet case (I∼ Va0.8 ). A theoretical model is presented that predicts (within 10% of experimental data) the divergence of sprays g(x) issued from a pair of interacting emitters due to the mutual Columbic interaction of space charges. The variation of onset voltage {{V}o} and spray current I with spacing between the emitters p is studied and it is found that {{V}o}∼ {{p}-0.2} and I∼ {{p}0.8} . The effect of the flow rate Q , voltage V and number of emitters ~n~ on the spray current I is investigated and it is found that I∼ {{Q}0.5} , I∼ Va0.8 and I∼ \\sqrt{n} . The present work provides insight regarding the behavior of interacting sprays in an inline configuration and could be significant in the design of multiple emitter systems for electrospray applications.

Emittance measurements of Space Shuttle orbiter reinforced carbon-carbon

NASA Technical Reports Server (NTRS)

Caram, Jose M.; Bouslog, Stanley A.; Cunnington, George R., Jr.

1992-01-01

The spectral and total normal emittance of the Reinforced Carbon-Carbon (RCC) used on Space Shuttle nose cap and wing leading edges has been measured at room temperature and at surface temperatures of 1200 to 2100 K. These measurements were made on virgin and two flown RCC samples. Room temperature directional emittance data were also obtained and were used to determine the total hemispherical emittance of RCC as a function of temperature. Results of the total normal emittance for the virgin samples showed good agreement with the current RCC emittance design curve; however, the data from the flown samples showed an increase in the emittance at high temperature possibly due to exposure from flight environments.

The cataphoretic emitter effect exhibited in high intensity discharge lamp electrodes

NASA Astrophysics Data System (ADS)

Mentel, Juergen

2018-01-01

A mono-layer of atoms, electropositive with respect to the substrate atoms, forms a dipole layer, reducing its work function. Such a layer is generated by diffusion of emitter material from the interior of the substrate, by vapour deposition or by deposition of emitter material onto arc electrodes by cataphoresis. This cataphoretic emitter effect is investigated within metal halide lamps with transparent YAG ceramic burners, and within model lamps. Within the YAG lamps, arcs are operated with switched-dc current between rod shaped tungsten electrodes in high pressure Hg vapour seeded with metal iodides. Within the model lamps, dc arcs are operated between rod-shaped tungsten electrodes—one doped—in atmospheric pressure Ar. Electrode temperatures are determined by 1λ -pyrometry, combined with simulation of the electrode heat balance. Plasma temperatures, atom and ion densities of emitter material are determined by emission and absorption spectroscopy. Phase resolved measurements in YAG lamps seeded with CeI3, CsI, DyI3, TmI3 and LaI3 show, within the cathodic half period, a reduction of the electrode temperature and an enhanced metal ion density in front of the electrode, and an opposite behavior after phase reversal. With increasing operating frequency, the state of the cathode overlaps onto the anodic phase—except for Cs, being low in adsorption energy. Generally, the phase averaged electrode tip temperature is reduced by seeding a lamp with emitter material; its height depends on admixtures. Measurements at tungsten electrodes doped with ThO2, La2O3 and Ce2O3 within the model lamp show that evaporated emitter material is redeposited by an emitter ion current onto the electrode surface. It reduces the work function of tungsten cathodes above the evaporation temperature of the emitter material, too; and also of cold anodes, indicating a field reversal in front of them. The formation of an emitter spot at low cathode temperature and high emitter material density is traced back to a locally reduced work function generated by a locally enhanced emitter ion current density.

Active spacecraft potential control: An ion emitter experiment. [Cluster mission

NASA Technical Reports Server (NTRS)

Riedler, W.; Goldstein, R.; Hamelin, M.; Maehlum, B. N.; Troim, J.; Olsen, R. C.; Pedersen, A.; Grard, R. J. L.; Schmidt, R.; Rudenauer, F.

1988-01-01

The cluster spacecraft are instrumented with ion emitters for charge neutralization. The emitters produce indium ions at 6 keV. The ion current is adjusted in a feedback loop with instruments measuring the spacecraft potential. The system is based on the evaporation of indium in the apex field of a needle. The design of the active spacecraft potential control instruments, and the ion emitters is presented.

Intra-Beam Scattering, Impedance, and Instabilities in Ultimate Storage Rings

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bane, Karl; /SLAC

We have investigated collective effects in an ultimate storage ring, i.e. one with diffraction limited emittances in both planes, using PEP-X as an example. In an ultimate ring intra-beam scattering (IBS) sets the limit of current that can be stored. In PEP-X, a 4.5 GeV ring running round beams at 200 mA in 3300 bunches, IBS doubles the emittances to 11.5 pm at the design current. The Touschek lifetime is 11 hours. Impedance driven collective effects tend not to be important since the beam current is relatively low. We have investigated collective effects in PEP-X, an ultimate storage ring, i.e.more » one with diffraction limited emittances (at one angstrom wavelength) in both planes. In an ultimate ring intra-beam scattering (IBS) sets the limit of current that can be stored. In PEP-X, IBS doubles the emittances to 11.5 pm at the design current of 200 mA, assuming round beams. The Touschek lifetime is quite large in PEP-X, 11.6 hours, and - near the operating point - increases with decreasing emittance. It is, however, a very sensitive function of momentum acceptance. In an ultimate ring like PEP-X impedance driven collective effects tend not to be important since the beam current is relatively low. Before ultimate PEP-X can be realized, the question of how to run a machine with round beams needs serious study. For example, in this report we assumed that the vertical emittance is coupling dominated. It may turn out that using vertical dispersion is a preferable way to generate round beams. The choice will affect IBS and the Touschek effect.« less

Phase control and fast start-up of a magnetron using modulation of an addressable faceted cathode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Browning, J., E-mail: JimBrowning@BoiseState.edu; Fernandez-Gutierrez, S.; Lin, M. C.

The use of an addressable, faceted cathode has been proposed as a method of modulating current injection in a magnetron to improve performance and control phase. To implement the controllable electron emission, five-sided and ten-sided faceted planar cathodes employing gated field emitters are considered as these emitters could be fabricated on flat substrates. For demonstration, the conformal finite-difference time-domain particle-in-cell simulation, as implemented in VORPAL, has been used to model a ten-cavity, rising sun magnetron using the modulated current sources and benchmarked against a typical continuous current source. For the modulated, ten-sided faceted cathode case, the electrons are injected frommore » three emitter elements on each of the ten facets. Each emitter is turned ON and OFF in sequence at the oscillating frequency with five emitters ON at one time to drive the five electron spokes of the π-mode. The emitter duty cycle is then 1/6th the Radio-Frequency (RF) period. Simulations show a fast start-up time as low as 35 ns for the modulated case compared to 100 ns for the continuous current cases. Analysis of the RF phase using the electron spoke locations and the RF magnetic field components shows that the phase is controlled for the modulated case while it is random, as typical, for the continuous current case. Active phase control during oscillation was demonstrated by shifting the phase of the electron injection 180° after oscillations started. The 180° phase shift time was approximately 25 RF cycles.« less

Up-conversion in rare-earth doped micro-particles applied to new emissive two-dimensional displays

NASA Astrophysics Data System (ADS)

Milliez, Anne Janet

Up-conversion (UC) in rare-earth co-doped fluorides to convert diode laser light in the near infrared to red, green and blue visible light is applied to make possible high performance emissive displays. The infrared-to-visible UC in the materials we study is a sequential form of non-linear two photon absorption in which a strong absorbing constituent absorbs two low energy photons and transfers this energy to another constituent which emits visible light. Some of the UC emitters' most appealing characteristics for displays are: a wide color gamut with very saturated colors, very high brightness operation without damage to the emitters, long lifetimes and efficiencies comparable to those of existing technologies. Other advantages include simplicity of fabrication, versatility of operating modes, and the potential for greatly reduced display weight and depth. Thanks to recent advances in material science and diode laser technology at the excitation wavelength, UC selected materials can be very efficient visible emitters. However, optimal UC efficiencies strongly depend on chosing proper operating conditions. In this thesis, we studied the conditions required for optimization. We demonstrated that high efficiency UC depends on high pump irradiance, low temperature and low scattering. With this understanding we can predict how to optimally use UC emitters in a wide range of applications. In particular, we showed how our very efficient UC emitters can be applied to make full color displays and very efficient white light sources.

Demonstration of cathode emittance dominated high bunch charge beams in a DC gun-based photoinjector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gulliford, Colwyn, E-mail: cg248@cornell.edu; Bartnik, Adam, E-mail: acb20@cornell.edu; Bazarov, Ivan

We present the results of transverse emittance and longitudinal current profile measurements of high bunch charge (≥100 pC) beams produced in the DC gun-based Cornell energy recovery linac photoinjector. In particular, we show that the cathode thermal and core beam emittances dominate the final 95% and core emittances measured at 9–9.5 MeV. Additionally, we demonstrate excellent agreement between optimized 3D space charge simulations and measurement, and show that the quality of the transverse laser distribution limits the optimal simulated and measured emittances. These results, previously thought achievable only with RF guns, demonstrate that DC gun based photoinjectors are capable of deliveringmore » beams with sufficient single bunch charge and beam quality suitable for many current and next generation accelerator projects such as Energy Recovery Linacs and Free Electron Lasers.« less

Field emission properties of SiO2-wrapped CNT field emitter.

PubMed

Lim, Yu Dian; Hu, Liangxing; Xia, Xin; Ali, Zishan; Wang, Shaomeng; Tay, Beng Kang; Aditya, Sheel; Miao, Jianmin

2018-01-05

Carbon nanotubes (CNTs) exhibit unstable field emission (FE) behavior with low reliability due to uneven heights of as-grown CNTs. It has been reported that a mechanically polished SiO 2 -wrapped CNT field emitter gives consistent FE performance due to its uniform CNT heights. However, there are still a lack of studies on the comparison between the FE properties of freestanding and SiO 2 -wrapped CNTs. In this study, we have performed a comparative study on the FE properties of freestanding and SiO 2 -wrapped CNT field emitters. From the FE measurements, freestanding CNT field emitter requires lower applied voltage of 5.5 V μm -1 to achieve FE current density of 22 mA cm -2 ; whereas SiO 2 -wrapped field emitter requires 8.5 V μm -1 to achieve the same current density. This can be attributed to the lower CNT tip electric field of CNTs embedded in SiO 2 , as obtained from the electric field simulation. Nevertheless, SiO 2 -wrapped CNTs show higher consistency in FE current than freestanding CNTs. Under repeated FE measurement, SiO 2 -wrapped CNT field emitter achieves consistent FE behavior from the 1st voltage sweep, whereas freestanding field emitter only achieved consistent FE performance after 3rd voltage sweep. At the same time, SiO 2 -wrapped CNTs exhibit better emission stability than freestanding CNTs over 4000 s continuous emission.

Field emission properties of SiO2-wrapped CNT field emitter

NASA Astrophysics Data System (ADS)

Lim, Yu Dian; Hu, Liangxing; Xia, Xin; Ali, Zishan; Wang, Shaomeng; Tay, Beng Kang; Aditya, Sheel; Miao, Jianmin

2018-01-01

Carbon nanotubes (CNTs) exhibit unstable field emission (FE) behavior with low reliability due to uneven heights of as-grown CNTs. It has been reported that a mechanically polished SiO2-wrapped CNT field emitter gives consistent FE performance due to its uniform CNT heights. However, there are still a lack of studies on the comparison between the FE properties of freestanding and SiO2-wrapped CNTs. In this study, we have performed a comparative study on the FE properties of freestanding and SiO2-wrapped CNT field emitters. From the FE measurements, freestanding CNT field emitter requires lower applied voltage of 5.5 V μm-1 to achieve FE current density of 22 mA cm-2 whereas SiO2-wrapped field emitter requires 8.5 V μm-1 to achieve the same current density. This can be attributed to the lower CNT tip electric field of CNTs embedded in SiO2, as obtained from the electric field simulation. Nevertheless, SiO2-wrapped CNTs show higher consistency in FE current than freestanding CNTs. Under repeated FE measurement, SiO2-wrapped CNT field emitter achieves consistent FE behavior from the 1st voltage sweep, whereas freestanding field emitter only achieved consistent FE performance after 3rd voltage sweep. At the same time, SiO2-wrapped CNTs exhibit better emission stability than freestanding CNTs over 4000 s continuous emission.

Improving the Sensitivity of Mass Spectrometry by Using a New Sheath Flow Electrospray Emitter Array at Subambient Pressures

DOE PAGES

Cox, Jonathan T.; Marginean, Ioan; Kelly, Ryan T.; ...

2014-03-28

Arrays of chemically etched emitters with individualized sheath gas capillaries have been developed to enhance electrospray ionization (ESI) at subambient pressures. By including an emitter array in a subambient pressure ionization with nanoelectrospray (SPIN) source, ionization and transmission efficiency can be maximized allowing for increased sensitivity in mass spectrometric analyses. The SPIN source eliminates the major ion losses at conventional ESI-mass spectrometry (MS) interface by placing the emitter in the first vacuum region of the instrument. To facilitate stable electrospray currents in such conditions we have developed an improved emitter array with individualized sheath gas around each emitter. The utilitymore » of the new emitter arrays for generating stable multi-electrosprays at subambient pressures was probed by coupling the emitter array/SPIN source with a time of flight (TOF) mass spectrometer. The instrument sensitivity was compared between single emitter/SPIN-MS and multi-emitter/SPIN-MS configurations using an equimolar solution of 9 peptides. An increase in sensitivity correlative to the number of emitters in the array was observed.« less

Improving the Sensitivity of Mass Spectrometry by Using a New Sheath Flow Electrospray Emitter Array at Subambient Pressures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cox, Jonathan T.; Marginean, Ioan; Kelly, Ryan T.

Arrays of chemically etched emitters with individualized sheath gas capillaries have been developed to enhance electrospray ionization (ESI) at subambient pressures. By including an emitter array in a subambient pressure ionization with nanoelectrospray (SPIN) source, ionization and transmission efficiency can be maximized allowing for increased sensitivity in mass spectrometric analyses. The SPIN source eliminates the major ion losses at conventional ESI-mass spectrometry (MS) interface by placing the emitter in the first vacuum region of the instrument. To facilitate stable electrospray currents in such conditions we have developed an improved emitter array with individualized sheath gas around each emitter. The utilitymore » of the new emitter arrays for generating stable multi-electrosprays at subambient pressures was probed by coupling the emitter array/SPIN source with a time of flight (TOF) mass spectrometer. The instrument sensitivity was compared between single emitter/SPIN-MS and multi-emitter/SPIN-MS configurations using an equimolar solution of 9 peptides. An increase in sensitivity correlative to the number of emitters in the array was observed.« less

Optical intensity dynamics in a five-emitter semiconductor array laser

NASA Astrophysics Data System (ADS)

Williams, Matthew O.; Kutz, J. Nathan

2009-06-01

The intensity dynamics of a five-emitter laser array subject to a linearly decreasing injection current are examined numerically. We have matched the results of the numerical model to an experimental AlGaAs quantum-dot array laser and have achieved the same robust oscillatory power output with a nearly π phase shift between emitters that was observed in experiments. Due to the linearly decreasing injection current, the output power of the waveguide decreases as a function of waveguide number. For injection currents ranging from 380 to 500 mA, the oscillatory behavior persists with only a slight change in phase difference. However, the fundamental frequency of oscillation increases with injection current, and higher harmonics as well as some fine structures are produced.

Ionization monitor with improved ultra-high megohm resistor

DOEpatents

Burgess, Edward T.

1988-11-05

An ionization monitor measures extremely small currents using a resistor containing a beta emitter to generate ion-pairs which are collected as current when the device is used as a feedback resistor in an electrometer circuit. By varying the amount of beta emitter, the resistance of the resistor may be varied.

Evidence of low injection efficiency for implanted p-emitters in bipolar 4H-SiC high-voltage diodes

NASA Astrophysics Data System (ADS)

Matthus, Christian D.; Huerner, Andreas; Erlbacher, Tobias; Bauer, Anton J.; Frey, Lothar

2018-06-01

In this study, the influence of the emitter efficiency on the forward current-voltage characteristics, especially the conductivity modulation of bipolar SiC-diodes was analyzed. It was determined that the emitter efficiency of p-emitters formed by ion implantation is significantly lower compared to p-emitters formed by epitaxy. In contrast to comparable studies, experimental approach was arranged that the influence of the quality of the drift-layer or the thickness of the emitter on the conductivity modulation could be excluded for the fabricated bipolar SiC-diodes of this work. Thus, it can be established that the lower emitter injection efficiency is mainly caused by the reduced electron lifetime in p-emitters formed by ion implantation. Therefore, a significant enhancement of the electron lifetime in implanted p-emitters is mandatory for e.g. SiC-MPS-diodes where the functionality of the devices depends significantly on the injection efficiency.

Energy transfer in PPV-based conjugated polymers: a defocused widefield fluorescence microscopy study.

PubMed

Hooley, E N; Tilley, A J; White, J M; Ghiggino, K P; Bell, T D M

2014-04-21

Both pendant and main chain conjugated MEH-PPV based polymers have been studied at the level of single chains using confocal and widefield fluorescence microscopy techniques. In particular, defocused widefield fluorescence is applied to reveal the extent of energy transfer in these polymers by identifying whether they act as single emitters. For main chain conjugated MEH-PPV, molecular weight and the surrounding matrix play a primary role in determining energy transport processes and whether single emitter behaviour is observed. Surprisingly in polymers with a saturated backbone but containing the same pendant MEH-PPV oligomer on each repeating unit, intra-chain energy transfer to a single emitter is also apparent. The results imply there is chromophore heterogeneity that can facilitate energy funneling to the emitting site. Both main chain conjugated and pendant MEH-PPV polymers exhibit changes in orientation of the emission dipole during a fluorescence trajectory of many seconds, whereas a model MEH-PPV oligomer does not. The results suggest that, in the polymers, the nature of the emitting chromophores can change during the time trajectory.

Thermionic converter

DOEpatents

Rasor, Ned S.; Britt, Edward J.

1976-01-01

A gas-filled thermionic converter is provided with a collector and an emitter having a main emitter region and an auxiliary emitter region in electrical contact with the main emitter region. The main emitter region is so positioned with respect to the collector that a main gap is formed therebetween and the auxiliary emitter region is so positioned with respect to the collector that an auxiliary gap is formed therebetween partially separated from the main gap with access allowed between the gaps to allow ionizable gas in each gap to migrate therebetween. With heat applied to the emitter the work function of the auxiliary emitter region is sufficiently greater than the work function of the collector so that an ignited discharge occurs in the auxiliary gap and the work function of the main emitter region is so related to the work function of the collector that an unignited discharge occurs in the main gap sustained by the ions generated in the auxiliary gap. A current flows through a load coupled across the emitter and collector due to the unignited discharge in the main gap.

Carbon Nanotube Field Emitters Synthesized on Metal Alloy Substrate by PECVD for Customized Compact Field Emission Devices to Be Used in X-Ray Source Applications.

PubMed

Park, Sangjun; Gupta, Amar Prasad; Yeo, Seung Jun; Jung, Jaeik; Paik, Sang Hyun; Mativenga, Mallory; Kim, Seung Hoon; Shin, Ji Hoon; Ahn, Jeung Sun; Ryu, Jehwang

2018-05-29

In this study, a simple, efficient, and economical process is reported for the direct synthesis of carbon nanotube (CNT) field emitters on metal alloy. Given that CNT field emitters can be customized with ease for compact and cold field emission devices, they are promising replacements for thermionic emitters in widely accessible X-ray source electron guns. High performance CNT emitter samples were prepared in optimized plasma conditions through the plasma-enhanced chemical vapor deposition (PECVD) process and subsequently characterized by using a scanning electron microscope, tunneling electron microscope, and Raman spectroscopy. For the cathode current, field emission (FE) characteristics with respective turn on (1 μA/cm²) and threshold (1 mA/cm²) field of 2.84 and 4.05 V/μm were obtained. For a field of 5.24 V/μm, maximum current density of 7 mA/cm² was achieved and a field enhancement factor β of 2838 was calculated. In addition, the CNT emitters sustained a current density of 6.7 mA/cm² for 420 min under a field of 5.2 V/μm, confirming good operational stability. Finally, an X-ray generated image of an integrated circuit was taken using the compact field emission device developed herein.

An accurate two-dimensional LBIC solution for bipolar transistors

NASA Astrophysics Data System (ADS)

Benarab, A.; Baudrand, H.; Lescure, M.; Boucher, J.

1988-05-01

A complete solution of the diffusion problem of carriers generated by a located light beam in the emitter and base region of a bipolar structure is presented. Green's function method and moment method are used to solve the 2-D diffusion equation in these regions. From the Green's functions solution of these equations, the light beam induced currents (LBIC) in the different junctions of the structure due to an extended generation represented by a rectangular light spot; are thus decided. The equations of these currents depend both on the parameters which characterise the structure, surface states, dimensions of the emitter and the base region, and the characteristics of the light spot, that is to say, the width and the wavelength. Curves illustrating the variation of the various LBIC in the base region junctions as a function of the impact point of the light beam ( x0) for different values of these parameters are discussed. In particular, the study of the base-emitter currents when the light beam is swept right across the sample illustrates clearly a good geometrical definition of the emitter region up to base end of the emitter-base space-charge areas and a "whirl" lateral diffusion beneath this region, (i.e. the diffusion of the generated carriers near the surface towards the horizontal base-emitter junction and those created beneath this junction towards the lateral (B-E) junctions).

High-Performance Field Emission from a Carbonized Cork.

PubMed

Lee, Jeong Seok; Lee, Hak Jun; Yoo, Jae Man; Kim, Taewoo; Kim, Yong Hyup

2017-12-20

To broaden the range of application of electron beams, low-power field emitters are needed that are miniature and light. Here, we introduce carbonized cork as a material for field emitters. The light natural cork becomes a graphitic honeycomb upon carbonization, with the honeycomb cell walls 100-200 nm thick and the aspect ratio larger than 100, providing an ideal structure for the field electron emission. Compared to nanocarbon field emitters, the cork emitter produces a high current density and long-term stability with a low turn-on field. The nature of the cork material makes it quite simple to fabricate the emitter. Furthermore, any desired shape of the emitter tailored for the final application can easily be prepared for point, line, or planar emission.

Design and fabrication of a duoplasmatron extraction geometry and LEBT for the LANSCE H{sup +} RFQ project

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fortgang, C. M., E-mail: cfortgang@lanl.gov; Batygin, Y. K.; Draganic, I. N.

The 750-keV H{sup +} Cockcroft-Walton at LANSCE will be replaced with a recently fabricated 4-rod Radio Frequency Quadrupole (RFQ) with injection energy of 35 keV. The existing duoplasmatron source extraction optics need to be modified to produce up to 35 mA of H{sup +} current with an emittance <0.02 π-cm-mrad (rms, norm) for injection into the RFQ. Parts for the new source have been fabricated and assembly is in process. We will use the existing duoplasmatron source with a newly designed extraction system and low energy beam transport (LEBT) for beam injection into the RFQ. In addition to source modifications,more » we need a new LEBT for transport and matching into the RFQ. The LEBT uses two magnetic solenoids with enough drift space between them to accommodate diagnostics and a beam deflector. The LEBT is designed to work over a range of space-charge neutralized currents and emittances. The LEBT is optimized in the sense that it minimizes the beam size in both solenoids for a point design of a given neutralized current and emittance. Special attention has been given to estimating emittance growth due to source extraction optics and solenoid aberrations. Examples of source-to-RFQ matching and emittance growth (due to both non-linear space charge and solenoid aberrations) are presented over a range of currents and emittances about the design point. A mechanical layout drawing will be presented along with the status of the source and LEBT, design, and fabrication.« less

Plasma characteristics in the discharge region of a 20 A emission current hollow cathode

NASA Astrophysics Data System (ADS)

Mingming, SUN; Tianping, ZHANG; Xiaodong, WEN; Weilong, GUO; Jiayao, SONG

2018-02-01

Numerical calculation and fluid simulation methods were used to obtain the plasma characteristics in the discharge region of the LIPS-300 ion thruster’s 20 A emission current hollow cathode and to verify the structural design of the emitter. The results of the two methods indicated that the highest plasma density and electron temperature, which improved significantly in the orifice region, were located in the discharge region of the hollow cathode. The magnitude of plasma density was about 1021 m-3 in the emitter and orifice regions, as obtained by numerical calculations, but decreased exponentially in the plume region with the distance from the orifice exit. Meanwhile, compared to the emitter region, the electron temperature and current improved by about 36% in the orifice region. The hollow cathode performance test results were in good agreement with the numerical calculation results, which proved that that the structural design of the emitter and the orifice met the requirements of a 20 A emission current. The numerical calculation method can be used to estimate plasma characteristics in the preliminary design stage of hollow cathodes.

Effect of low temperature oxidation (LTO) in reducing boron skin in boron spin on dopant diffused emitter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singha, Bandana; Solanki, Chetan Singh

Formation of boron skin is an unavoidable phenomenon in p-type emitter formation with boron dopant source. The boron skin thickness is generally less than 100 nm and difficult to remove by chemical and physical means. Low temperature oxidation (LTO) used in this work is useful in removing boron skin thickness up to 30 nm and improves the emitter performance. The effective minority carrier lifetime gets improved by more than 30% after using LTO and leakage current of the emitter gets lowered by 100 times thereby showing the importance of low temperature oxidation in boron spin on dopant diffused emitters.

Operational experience with nanocoulomb bunch charges in the Cornell photoinjector

DOE PAGES

Bartnik, Adam; Gulliford, Colwyn; Bazarov, Ivan; ...

2015-08-19

Characterization of 9–9.5 MeV electron beams produced in the dc-gun based Cornell photoinjector is given for bunch charges ranging from 20 pC to 2 nC. Comparison of the measured emittances and longitudinal current profiles to optimized 3D space charge simulations yields excellent agreement for bunch charges up to 1 nC when the measured laser distribution is used to generate initial particle distributions in simulation. Analysis of the scaling of the measured emittance with bunch charge shows that the emittance scales roughly as the square root of the bunch charge up to 300 pC, above which the trend becomes linear. Furthermore,more » these measurements demonstrate that the Cornell photoinjector can produce cathode emittance dominated beams meeting the emittance and peak current specifications for next generation free electron lasers operating at high repetition rate. In addition, the 1 and 2 nC results are relevant to the electron ion collider community.« less

Elucidation of Iron Gettering Mechanisms in Boron-Implanted Silicon Solar Cells

DOE PAGES

Laine, Hannu S.; Vahanissi, Ville; Liu, Zhengjun; ...

2017-12-15

To facilitate cost-effective manufacturing of boron-implanted silicon solar cells as an alternative to BBr 3 diffusion, we performed a quantitative test of the gettering induced by solar-typical boron-implants with the potential for low saturation current density emitters (< 50 fA/cm 2). We show that depending on the contamination level and the gettering anneal chosen, such boron-implanted emitters can induce more than a 99.9% reduction in bulk iron point defect concentration. The iron point defect results as well as synchrotron-based Nano-X-ray-fluorescence investigations of iron precipitates formed in the implanted layer imply that, with the chosen experimental parameters, iron precipitation is themore » dominant gettering mechanism, with segregation-based gettering playing a smaller role. We reproduce the measured iron point defect and precipitate distributions via kinetics modeling. First, we simulate the structural defect distribution created by the implantation process, and then we model these structural defects as heterogeneous precipitation sites for iron. Unlike previous theoretical work on gettering via boron- or phosphorus-implantation, our model is free of adjustable simulation parameters. The close agreement between the model and experimental results indicates that the model successfully captures the necessary physics to describe the iron gettering mechanisms operating in boron-implanted silicon. Furthermore, this modeling capability allows high-performance, cost-effective implanted silicon solar cells to be designed.« less

Elucidation of Iron Gettering Mechanisms in Boron-Implanted Silicon Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Laine, Hannu S.; Vahanissi, Ville; Liu, Zhengjun

To facilitate cost-effective manufacturing of boron-implanted silicon solar cells as an alternative to BBr 3 diffusion, we performed a quantitative test of the gettering induced by solar-typical boron-implants with the potential for low saturation current density emitters (< 50 fA/cm 2). We show that depending on the contamination level and the gettering anneal chosen, such boron-implanted emitters can induce more than a 99.9% reduction in bulk iron point defect concentration. The iron point defect results as well as synchrotron-based Nano-X-ray-fluorescence investigations of iron precipitates formed in the implanted layer imply that, with the chosen experimental parameters, iron precipitation is themore » dominant gettering mechanism, with segregation-based gettering playing a smaller role. We reproduce the measured iron point defect and precipitate distributions via kinetics modeling. First, we simulate the structural defect distribution created by the implantation process, and then we model these structural defects as heterogeneous precipitation sites for iron. Unlike previous theoretical work on gettering via boron- or phosphorus-implantation, our model is free of adjustable simulation parameters. The close agreement between the model and experimental results indicates that the model successfully captures the necessary physics to describe the iron gettering mechanisms operating in boron-implanted silicon. Furthermore, this modeling capability allows high-performance, cost-effective implanted silicon solar cells to be designed.« less

Emittance of short-pulsed high-current ion beams formed from the plasma of the electron cyclotron resonance discharge sustained by high-power millimeter-wave gyrotron radiation.

PubMed

Razin, S; Zorin, V; Izotov, I; Sidorov, A; Skalyga, V

2014-02-01

We present experimental results on measuring the emittance of short-pulsed (≤100 μs) high-current (80-100 mA) ion beams of heavy gases (Nitrogen, Argon) formed from a dense plasma of an ECR source of multiply charged ions (MCI) with quasi-gas-dynamic mode of plasma confinement in a magnetic trap of simple mirror configuration. The discharge was created by a high-power (90 kW) pulsed radiation of a 37.5-GHz gyrotron. The normalized emittance of generated ion beams of 100 mA current was (1.2-1.3) π mm mrad (70% of ions in the beams). Comparing these results with those obtained using a cusp magnetic trap, it was concluded that the structure of the trap magnetic field lines does not exert a decisive influence on the emittance of ion beams in the gas-dynamic ECR source of MCI.

Emittance of short-pulsed high-current ion beams formed from the plasma of the electron cyclotron resonance discharge sustained by high-power millimeter-wave gyrotron radiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Razin, S., E-mail: sevraz@appl.sci-nnov.ru; Zorin, V.; Izotov, I.

2014-02-15

We present experimental results on measuring the emittance of short-pulsed (≤100 μs) high-current (80–100 mA) ion beams of heavy gases (Nitrogen, Argon) formed from a dense plasma of an ECR source of multiply charged ions (MCI) with quasi-gas-dynamic mode of plasma confinement in a magnetic trap of simple mirror configuration. The discharge was created by a high-power (90 kW) pulsed radiation of a 37.5-GHz gyrotron. The normalized emittance of generated ion beams of 100 mA current was (1.2–1.3) π mm mrad (70% of ions in the beams). Comparing these results with those obtained using a cusp magnetic trap, it was concluded thatmore » the structure of the trap magnetic field lines does not exert a decisive influence on the emittance of ion beams in the gas-dynamic ECR source of MCI.« less

Base and collector resistances in heterojunction bipolar transistors

NASA Astrophysics Data System (ADS)

Anholt, R.; Bozada, C.; Desalvo, G.; Dettmer, R.; Ebel, J.; Gillespie, J.; Jenkins, T.; Havasy, C.; Ito, C.; Nakano, K.; Pettiford, C.; Quach, T.; Sewell, J.; Via, D.

1997-11-01

In heterojunction bipolar transistors (HBTs), the reverse base currents flow from the outer base periphery to the collector. The reverse base and collector resistances are therefore dominated by contact resistance, which is inversely proportional to the outer base and inner collector periphery lengths which are larger than the emitter lengths when the base and collector electrodes surround the emitter element. These resistances can be extracted from reverse Gummel (current vs Vbc with Vbc = 0) and from measurements of output resistances at zero collector voltage sweeps. We compare models with measurements where the base and collector peripheries decrease with increasing emitter diameters.

Development of reverse biased p-n junction electron emission

NASA Technical Reports Server (NTRS)

Fowler, P.; Muly, E. C.

1971-01-01

A cold cathode emitter of hot electrons for use as a source of electrons in vacuum gauges and mass spectrometers was developed using standard Norton electroluminescent silicon carbide p-n diodes operated under reverse bias conditions. Continued development including variations in the geometry of these emitters was carried out such that emitters with an emission efficiency (emitted current/junction current) as high as 3 x 10-0.00001 were obtained. Pulse measurements of the diode characteristics were made and showed that higher efficiency can be attained under pulse conditions probably due to the resulting lower temperatures resulting from such operation.

Emittance Measurements Relevant to a 250 W(sub t) Class RTPV Generator for Space Exploration

NASA Technical Reports Server (NTRS)

Wolford, Dave; Chubb, Donald; Clark, Eric; Pal, Anna Maria; Scheiman, Dave; Colon, Jack

2009-01-01

A proposed 250 Wt Radioisotope Thermophotovoltaic (RTPV) power system for utilization in lunar exploration and the subsequent exploration of Mars is described. Details of emitter selection are outlined for use in a maintenance free power supply that is productive over a 14-year mission life. Thorough knowledge of a material s spectral emittance is essential for accurate modeling of the RTPV system. While sometimes treated as a surface effect, emittance involves radiation from within a material. This creates a complex thermal gradient which is a combination of conductive and radiative heat transfer mechanisms. Emittance data available in the literature is a valuable resource but it is particular to the test sample s physical characteristics and the test environment. Considerations for making spectral emittance measurements relevant to RTPV development are discussed. Measured spectral emittance data of refractory emitter materials is given. Planned measurement system modifications to improve relevance to the current project are presented.

Benchmarking of measurement and simulation of transverse rms-emittance growth

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jeon, Dong-O

2008-01-01

Transverse emittance growth along the Alvarez DTL section is a major concern with respect to the preservation of beam quality of high current beams at the GSI UNILAC. In order to define measures to reduce this growth appropriated tools to simulate the beam dynamics are indispensable. This paper is about the benchmarking of three beam dynamics simulation codes, i.e. DYNAMION, PARMILA, and PARTRAN against systematic measurements of beam emittances for different machine settings. Experimental set-ups, data reduction, the preparation of the simulations, and the evaluation of the simulations will be described. It was found that the measured 100%-rmsemittances behind themore » DTL exceed the simulated values. Comparing measured 90%-rms-emittances to the simulated 95%-rms-emittances gives fair to good agreement instead. The sum of horizontal and vertical emittances is even described well by the codes as long as experimental 90%-rmsemittances are compared to simulated 95%-rms-emittances. Finally, the successful reduction of transverse emittance growth by systematic beam matching is reported.« less

Pulsed hybrid field emitter

DOEpatents

Sampayan, Stephen E.

1998-01-01

A hybrid emitter exploits the electric field created by a rapidly depoled ferroelectric material. Combining the emission properties of a planar thin film diamond emitter with a ferroelectric alleviates the present technological problems associated with both types of emitters and provides a robust, extremely long life, high current density cathode of the type required by emerging microwave power generation, accelerator technology and display applications. This new hybrid emitter is easy to fabricate and not susceptible to the same failures which plague microstructure field emitter technology. Local electrode geometries and electric field are determined independently from those for optimum transport and brightness preservation. Due to the large amount of surface charge created on the ferroelectric, the emitted electrons have significant energy, thus eliminating the requirement for specialized phosphors in emissive flat-panel displays.

Pulsed hybrid field emitter

DOEpatents

Sampayan, S.E.

1998-03-03

A hybrid emitter exploits the electric field created by a rapidly depoled ferroelectric material. Combining the emission properties of a planar thin film diamond emitter with a ferroelectric alleviates the present technological problems associated with both types of emitters and provides a robust, extremely long life, high current density cathode of the type required by emerging microwave power generation, accelerator technology and display applications. This new hybrid emitter is easy to fabricate and not susceptible to the same failures which plague microstructure field emitter technology. Local electrode geometries and electric field are determined independently from those for optimum transport and brightness preservation. Due to the large amount of surface charge created on the ferroelectric, the emitted electrons have significant energy, thus eliminating the requirement for specialized phosphors in emissive flat-panel displays. 11 figs.

Fabrication and electrical characterization of planar lighting devices with Cs3Sb photocathode emitters

NASA Astrophysics Data System (ADS)

Jeong, Hyo-Soo; Keller, Kris; Culkin, Brad

2017-03-01

Non-vacuum process technology was used to produce Cs3Sb photocathodes on substrates, and in-situ panel devices were fabricated. The performance of the devices was characterized by measuring the anode current as functions of the devices' operation times. An excitation light source with a 475-nm wavelength was used for the photocathodes. The device has a simple diode structure, providing unique characteristics such as a large gap, vertical electron beam directionality, and resistance to surface contamination from ion bombardment and poisoning by outgassing species. Accordingly, Cs3Sb photocathodes function as flat emitters, and the emission properties of the photocathode emitters depend on the vacuum level of the devices. An improved current stability has been observed after conducting an electrical conditioning process to remove possible adsorbates on the Cs3Sb flat emitters.

STABILIZED TRANSISTOR AMPLIFIER

DOEpatents

Noe, J.B.

1963-05-01

A temperature stabilized transistor amplifier having a pair of transistors coupled in cascade relation that are capable of providing amplification through a temperature range of - 100 un. Concent 85% F to 400 un. Concent 85% F described. The stabilization of the amplifier is attained by coupling a feedback signal taken from the emitter of second transistor at a junction between two serially arranged biasing resistances in the circuit of the emitter of the second transistor to the base of the first transistor. Thus, a change in the emitter current of the second transistor is automatically corrected by the feedback adjustment of the base-emitter potential of the first transistor and by a corresponding change in the base-emitter potential of the second transistor. (AEC)

Optical transition radiation used in the diagnostic of low energy and low current electron beams in particle accelerators.

PubMed

Silva, T F; Bonini, A L; Lima, R R; Maidana, N L; Malafronte, A A; Pascholati, P R; Vanin, V R; Martins, M N

2012-09-01

Optical transition radiation (OTR) plays an important role in beam diagnostics for high energy particle accelerators. Its linear intensity with beam current is a great advantage as compared to fluorescent screens, which are subject to saturation. Moreover, the measurement of the angular distribution of the emitted radiation enables the determination of many beam parameters in a single observation point. However, few works deals with the application of OTR to monitor low energy beams. In this work we describe the design of an OTR based beam monitor used to measure the transverse beam charge distribution of the 1.9-MeV electron beam of the linac injector of the IFUSP microtron using a standard vision machine camera. The average beam current in pulsed operation mode is of the order of tens of nano-Amps. Low energy and low beam current make OTR observation difficult. To improve sensitivity, the beam incidence angle on the target was chosen to maximize the photon flux in the camera field-of-view. Measurements that assess OTR observation (linearity with beam current, polarization, and spectrum shape) are presented, as well as a typical 1.9-MeV electron beam charge distribution obtained from OTR. Some aspects of emittance measurement using this device are also discussed.

The effect of plasma density and emitter geometry on space charge limits for field emitter array electron charge emission into a space plasma

NASA Astrophysics Data System (ADS)

Morris, Dave; Gilchrist, Brian; Gallimore, Alec

2001-02-01

Field Emitter Array Cathodes (FEACs) are a new technology being developed for several potential spacecraft electron emission and charge control applications. Instead of a single hot (i.e., high powered) emitter, or a gas dependant plasma contactor, FEAC systems consist of many (hundreds or thousands) of small (micron level) cathode/gate pairs printed on a semiconductor wafer that effect cold field emission at relatively low voltages. Each individual cathode emits only micro-amp level currents, but a functional array is capable of amp/cm2 current densities. It is hoped that thus FEAC offers the possibility of a relatively low-power, simple to integrate, and inexpensive technique for the high level of current emissions that are required for an electrodynamic tether (EDT) propulsion mission. Space charge limits are a significant concern for the EDT application. Vacuum chamber tests and PIC simulations are being performed at the University of Michigan Plasmadynamics and Electric Propulsion Laboratory and Space Physics Research Laboratory to determine the effect of plasma density and emitter geometry on space charge limitations. The results of this work and conclusions to date of how to best mitigate space charge limits will be presented. .

Computer acquired performance data from a chemically vapor-deposited-rhenium, niobium planar diode

NASA Technical Reports Server (NTRS)

Manista, E. J.; Morris, J. F.; Smith, A. L.; Lancashire, R. B.

1973-01-01

Performance data from a chemically vapor-deposited-rhenium, niobium thermionic converter are presented. The planar converter has a guard-ringed collector and a nominal fixed spacing of 0.25 mm (10 mils). The data were obtained by using a computerized acquisition system and are available on request to one of the authors on microfiche as individual and composite parametric current, voltage curves. The parameters are the temperatures of the emitter T sub E collector T sub C, and cesium reservoir T sub R. The composite plots have constant T sub E and varying T sub C or T sub R, or both. Current, voltage envelopes having constant T sub E with and without fixed T sub C appear in the present report. The diode was tested at increments between 1600 and 2000 K for the emitter Hohlraum, 800 to 1100 K for the collector, and 540 and 650 K for the reservoir. A total of 312 current, voltage curves were obtained in the present performance evaluation. Current, voltage envelopes from three rhenium emitter converters evaluated in the present program are also given. The data are compared at commom emitter Hohlraum temperatures.

Vertically aligned carbon nanotube emitter on metal foil for medical X-ray imaging.

PubMed

Ryu, Je Hwang; Kim, Wan Sun; Lee, Seung Ho; Eom, Young Ju; Park, Hun Kuk; Park, Kyu Chang

2013-10-01

A simple method is proposed for growing vertically aligned carbon nanotubes on metal foil using the triode direct current plasma-enhanced chemical vapor deposition (PECVD). The carbon nanotube (CNT) electron emitter was fabricated using fewer process steps with an acid treated metal substrate. The CNT emitter was used for X-ray generation, and the X-ray image of mouse's joint was obtained with an anode current of 0.5 mA at an anode bias of 60 kV. The simple fabrication of a well-aligned CNT with a protection layer on metal foil, and its X-ray application, were studied.

Recent progress of carbon nanotube field emitters and their application.

PubMed

Seelaboyina, Raghunandan; Choi, Wonbong

2007-01-01

The potential of utilizing carbon nanotube field emission properties is an attractive feature for future vacuum electronic devices including: high power microwave, miniature x-ray, backlight for liquid crystal displays and flat panel displays. Their high emission current, nano scale geometry, chemical inertness and low threshold voltage for emission are attractive features for the field emission applications. In this paper we review the recent developments of carbon nanotube field emitters and their device applications. We also discuss the latest results on field emission current amplification achieved with an electron multiplier microchannel plate, and emission performance of multistage field emitter based on oxide nanowire operated in poor vacuum.

Spindt cold cathode electron gun development program

NASA Technical Reports Server (NTRS)

Spindt, C. A.

1983-01-01

A thin film field emission cathode array and an electron gun based on this emitter array are summarized. Fabricating state of the art cathodes for testing at NASA and NRL, advancing the fabrication technology, developing wedge shaped emitters, and performing emission tests are covered. An anistropic dry etching process (reactive ion beam etching) developed that leads to increasing the packing density of the emitter tips to about 5 x 10 to the 6th power/square cm. Tests with small arrays of emitter tips having about 10 tips has demonstrated current densities of over 100 A/sq cm. Several times using cathodes having a packing density of 1.25 x 10 to the 6th power tips/sq cm. Indications are that the higher packing density achievable with the dry etch process may extend this capability to the 500 A/sq cm range and beyond. The wedge emitter geometry was developed and shown to produce emission. This geometry can (in principle) extend the current density capability of the cathodes beyond the 500 A/sq cm level. An emission microscope was built and tested for use with the cathodes.

Penetration length-dependent hot electrons in the field emission from ZnO nanowires

NASA Astrophysics Data System (ADS)

Chen, Yicong; Song, Xiaomeng; Li, Zhibing; She, Juncong; Deng, Shaozhi; Xu, Ningsheng; Chen, Jun

2018-01-01

In the framework of field emission, whether or not hot electrons can form in the semiconductor emitters under a surface penetration field is of great concern, which will provide not only a comprehensive physical picture of field emission from semiconductor but also guidance on how to improve device performance. However, apart from some theoretical work, its experimental evidence has not been reported yet. In this article, the field penetration length-dependent hot electrons were observed in the field emission of ZnO nanowires through the in-situ study of its electrical and field emission characteristic before and after NH3 plasma treatment in an ultrahigh vacuum system. After the treatment, most of the nanowires have an increased carrier density but reduced field emission current. The raised carrier density was caused by the increased content of oxygen vacancies, while the degraded field emission current was attributed to the lower kinetic energy of hot electrons caused by the shorter penetration length. All of these results suggest that the field emission properties of ZnO nanowires can be optimized by modifying their carrier density to balance both the kinetic energy of field induced hot electrons and the limitation of saturated current under a given field.

The compensation of quadrupole errors and space charge effects by using trim quadrupoles

NASA Astrophysics Data System (ADS)

An, YuWen; Wang, Sheng

2011-12-01

The China Spallation Neutron Source (CSNS) accelerators consist of an H-linac and a proton Rapid Cycling Synchrotron (RCS). RCS is designed to accumulate and accelerate proton beam from 80 MeV to 1.6 GeV with a repetition rate of 25 Hz. The main dipole and quadruple magnet will operate in AC mode. Due to the adoption of the resonant power supplies, saturation errors of magnetic field cannot be compensated by power supplies. These saturation errors will disturb the linear optics parameters, such as tunes, beta function and dispersion function. The strong space charge effects will cause emittance growth. The compensation of these effects by using trim quadruples is studied, and the corresponding results are presented.

Analytical and numerical study of New field emitter processing for superconducting cavities

NASA Astrophysics Data System (ADS)

Volkov, Vladimir; Petrov, Victor

2018-02-01

In this article a scientific prove for a new technology to maximize the accelerating gradient in superconducting cavities by processing on higher order mode frequencies is presented. As dominant energy source the heating of field emitters by an induced rf current (rf-heating) is considered. The field emitter structure is assumed to be a chain of conductive particles, which are formed by attractive forces.

Hybrid permeable metal-base transistor with large common-emitter current gain and low operational voltage.

PubMed

Feng, Chengang; Yi, Mingdong; Yu, Shunyang; Hümmelgen, Ivo A; Zhang, Tong; Ma, Dongge

2008-04-01

We demonstrate the suitability of N,N'-diphenyl-N,N'-bis(1-naphthylphenyl)-1,1'-biphenyl-4,4'-diamine (NPB), an organic semiconductor widely used in organic light-emitting diodes (OLEDs), for high-gain, low operational voltage nanostructured vertical-architecture transistors, which operate as permeable-base transistors. By introducing vanadium oxide (V2O5) between the injecting metal and NPB layer at the transistor emitter, we reduced the emitter operational voltage. The addition of two Ca layers, leading to a Ca/Ag/Ca base, allowed to obtain a large value of common-emitter current gain, but still retaining the permeable-base transistor character. This kind of vertical devices produced by simple technologies offer attractive new possibilities due to the large variety of available molecular semiconductors, opening the possibility of incorporating new functionalities in silicon-based devices.

Molecularly Engineered Organic-Inorganic Hybrid Perovskite with Multiple Quantum Well Structure for Multicolored Light-Emitting Diodes

PubMed Central

Hu, Hongwei; Salim, Teddy; Chen, Bingbing; Lam, Yeng Ming

2016-01-01

Organic-inorganic hybrid perovskites have the potential to be used as a new class of emitters with tunable emission, high color purity and good ease of fabrication. Recent studies have so far been focused on three-dimensional (3D) perovskites, such as CH3NH3PbBr3 and CH3NH3PbI3 for green and infrared emission. Here, we explore a new series of hybrid perovskite emitters with a general formula of (C4H9NH3)2(CH3NH3)n−1PbnI3n+1 (where n = 1, 2, 3), which possesses a multiple quantum well structure. The quantum well thickness of these materials is adjustable through simple molecular engineering which results in a continuously tunable bandgap and emission spectra. Deep saturated red emission was obtained with a peak external quantum efficiency of 2.29% and a maximum luminance of 214 cd/m2. Green and blue LEDs were also demonstrated through halogen substitutions in these hybrid perovskites. We expect these results to open up the way towards high performance perovskite LEDs through molecular-structure engineering of these perovskite emitters. PMID:27633084

Work functions of hafnium nitride thin films as emitter material for field emitter arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gotoh, Yasuhito, E-mail: gotoh.yasuhito.5w@kyoto-u.ac.jp; Fujiwara, Sho; Tsuji, Hiroshi

The work functions of hafnium nitride thin films prepared by radio-frequency magnetron sputtering were investigated in vacuum, before and after surface cleaning processes, with a view of improving the properties of as-fabricated field emitter arrays comprising hafnium nitride emitters. The measurement of the work function was first performed for the as-deposited films and then for films subjected to surface cleaning process, either thermal treatment or ion bombardment. Thermal treatment at a maximum temperature of 300 °C reduced the work function by 0.7 eV. Once the film was heated, the work function maintained the reduced value, even after cooling to room temperature. Amore » little change in the work function was observed for the second and third thermal treatments. The ion bombardment was conducted by exposing the sample to a thin plasma for different sample bias conditions and processing times. When the sample was biased at −10 V, the work function decreased by 0.6 eV. The work function reduction became saturated in the early stage of the ion bombardment. When the sample was biased at −50 V, the work function exhibited different behaviors, that is, first it decreased rapidly and then increased in response to the increase in processing time. The lowest attainable work function was found to be 4.00 eV. It should be noted that none of the work function values reported in this paper were obtained using surfaces that were demonstrated to be free from oxygen contamination. The present results suggest that the current–voltage characteristics of a field emitter array can be improved by a factor of 25–50 by the examined postprocesses.« less

Method and apparatus for multispray emitter for mass spectrometry

DOEpatents

Smith, Richard D.; Tang, Keqi; Lin, Yuehe

2004-12-14

A method and apparatus that utilizes two or more emitters simultaneously to form an electrospray of a sample that is then directed into a mass spectrometer, thereby increasing the total ion current introduced into an electrospray ionization mass spectrometer, given a liquid flow rate of a sample. The method and apparatus are most conveniently constructed as an array of spray emitters fabricated on a single chip, however, the present invention encompasses any apparatus wherein two or more emitters are simultaneously utilized to form an electrospray of a sample that is then directed into a mass spectrometer.

Does the estimation of light attenuation in tissue increase the accuracy of reflectance pulse oximetry at low oxygen saturations in vivo?

PubMed

Kisch-Wedel, H; Bernreuter, P; Kemming, G; Albert, M; Zwissler, B

2009-09-01

A new technique was validated in vivo in reflectance pulse oximetry for measuring low oxygen saturations. Two pairs of light emitter/detector diodes allow for estimation of light attenuation (LA) in tissue, which is assumed to be responsible for the inaccuracy of pulse oximetry at less than 70 % arterial oxygen saturation. For validation, 17 newborn piglets were desaturated stepwise from 21 % to 1.25 % inspiratory oxygen concentration during general anesthesia, and arterial oxygen saturation was measured with the reflectance pulse oximeter adjusted for LA in tissue, with a standard transmission pulse oximeter and a hemoximeter. LA in tissue could be quantified and was different between snout and foreleg (probability level (p) < 0.05). At arterial oxygen saturations above 70 %, the bias between the methods was at 0 %-1 % and the variability 4 %-5 %. From 2 % to 100 % arterial oxygen saturation, the reflectance pulse oximeter estimated oxyhemoglobin saturation more accurately than a conventional transmission pulse oximeter (p < 0.05). At low oxygen saturations below 70 %, the bias and variability of the reflectance pulse oximeter calibration were closer to the hemoximeter measurements than the transmission pulse oximeter (p < 0.05). The variability of the reflectance pulse oximeter was slightly lower than the traditional oximeter by taking into account the LA in tissue (9 % versus 11 % -15 %, ns), and thus, the quality of the individual calibration lines improved (correlation coefficient, p < 0.05).

Secondary emission electron gun using external primaries

DOEpatents

Srinivasan-Rao, Triveni [Shoreham, NY; Ben-Zvi, Ilan [Setauket, NY

2009-10-13

An electron gun for generating an electron beam is provided, which includes a secondary emitter. The secondary emitter includes a non-contaminating negative-electron-affinity (NEA) material and emitting surface. The gun includes an accelerating region which accelerates the secondaries from the emitting surface. The secondaries are emitted in response to a primary beam generated external to the accelerating region. The accelerating region may include a superconducting radio frequency (RF) cavity, and the gun may be operated in a continuous wave (CW) mode. The secondary emitter includes hydrogenated diamond. A uniform electrically conductive layer is superposed on the emitter to replenish the extracted current, preventing charging of the emitter. An encapsulated secondary emission enhanced cathode device, useful in a superconducting RF cavity, includes a housing for maintaining vacuum, a cathode, e.g., a photocathode, and the non-contaminating NEA secondary emitter with the uniform electrically conductive layer superposed thereon.

Secondary emission electron gun using external primaries

DOEpatents

Srinivasan-Rao, Triveni [Shoreham, NY; Ben-Zvi, Ilan [Setauket, NY; Kewisch, Jorg [Wading River, NY; Chang, Xiangyun [Middle Island, NY

2007-06-05

An electron gun for generating an electron beam is provided, which includes a secondary emitter. The secondary emitter includes a non-contaminating negative-electron-affinity (NEA) material and emitting surface. The gun includes an accelerating region which accelerates the secondaries from the emitting surface. The secondaries are emitted in response to a primary beam generated external to the accelerating region. The accelerating region may include a superconducting radio frequency (RF) cavity, and the gun may be operated in a continuous wave (CW) mode. The secondary emitter includes hydrogenated diamond. A uniform electrically conductive layer is superposed on the emitter to replenish the extracted current, preventing charging of the emitter. An encapsulated secondary emission enhanced cathode device, useful in a superconducting RF cavity, includes a housing for maintaining vacuum, a cathode, e.g., a photocathode, and the non-contaminating NEA secondary emitter with the uniform electrically conductive layer superposed thereon.

Undulator-Based Laser Wakefield Accelerator Electron Beam Energy Spread and Emittance Diagnostic

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bakeman, M. S.; University of Nevada Reno, Reno, NV 89557; Van Tilborg, J.

The design and current status of experiments to couple the Tapered Hybrid Undulator (THUNDER) to the Lawrence Berkeley National Laboratory (LBNL) laser plasma accelerator (LPA) to measure electron beam energy spread and emittance are presented.

Study of ultra-low emittance design for SPEAR3

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, M. -H.; Huang, X.; Safranek, J.

2015-09-17

Since its 2003 construction, the SPEAR3 synchrotron light source at SLAC has continuously improved its performance by raising beam current, top-off injection, and smaller emittance. This makes SPEAR3 one of the most productive light sources in the world. Now, to further enhance the performance of SPEAR3, we are looking into the possibility of converting SPEAR3 to an ultra-low emittance storage ring within its site constraint.

Current Modulation of a Heterojunction Structure by an Ultra-Thin Graphene Base Electrode.

PubMed

Alvarado Chavarin, Carlos; Strobel, Carsten; Kitzmann, Julia; Di Bartolomeo, Antonio; Lukosius, Mindaugas; Albert, Matthias; Bartha, Johann Wolfgang; Wenger, Christian

2018-02-27

Graphene has been proposed as the current controlling element of vertical transport in heterojunction transistors, as it could potentially achieve high operation frequencies due to its metallic character and 2D nature. Simulations of graphene acting as a thermionic barrier between the transport of two semiconductor layers have shown cut-off frequencies larger than 1 THz. Furthermore, the use of n-doped amorphous silicon, (n)-a-Si:H, as the semiconductor for this approach could enable flexible electronics with high cutoff frequencies. In this work, we fabricated a vertical structure on a rigid substrate where graphene is embedded between two differently doped (n)-a-Si:H layers deposited by very high frequency (140 MHz) plasma-enhanced chemical vapor deposition. The operation of this heterojunction structure is investigated by the two diode-like interfaces by means of temperature dependent current-voltage characterization, followed by the electrical characterization in a three-terminal configuration. We demonstrate that the vertical current between the (n)-a-Si:H layers is successfully controlled by the ultra-thin graphene base voltage. While current saturation is yet to be achieved, a transconductance of ~230 μ S was obtained, demonstrating a moderate modulation of the collector-emitter current by the ultra-thin graphene base voltage. These results show promising progress towards the application of graphene base heterojunction transistors.

Study of thermal-field emission properties and investigation of temperature dependent noise in the field emission current from vertical carbon nanotube emitters

NASA Astrophysics Data System (ADS)

Kolekar, Sadhu; Patole, S. P.; Patil, Sumati; Yoo, J. B.; Dharmadhikari, C. V.

2017-10-01

We have investigated temperature dependent field electron emission characteristics of vertical carbon nanotubes (CNTs). The generalized expression for electron emission from well-defined cathode surface is given by Millikan and Lauritsen [1] for the combination of temperature and electric field effect. The same expression has been used to explain the electron emission characteristics from vertical CNT emitters. Furthermore, this has been applied to explain the electron emission for different temperatures ranging from room temperature to 1500 K. The real-time field electron emission images at room temperature and 1500 K are recorded by using Charge Coupled Device (CCD) in order to understand the effect of temperature on distribution of electron emission spots and ring like structures in Field Emission Microscope (FEM) image. The FEM images could be used to calculate the total number of emitters per cm2 for electron emission. The calculated number of emitters per cm2 from FEM image is typically, 4.5 × 107 and the actual number emitters per cm2 present as per Atomic Force Microscopy (AFM) data is 1.2 × 1012. The measured Current-Voltage (I-V) characteristics exhibit non linear Folwer-Nordheim (F-N) type behavior. The fluctuations in the emission current were recorded at different temperatures and Fast Fourier transformed into temperature dependent power spectral density. The latter was found to obey power law relation S(f) = A(Iδ/fξ), where δ and ξ are temperature dependent current and frequency exponents respectively.

Study of ultra-low emittance design for Spear3 using longitudinal gradient dipole

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, M. -H.; Huang, X.; Safranek, J.

2015-09-24

Since its 2003 construction, the SPEAR3 synchrotron light source at SLAC has continuously improved its performance by raising beam current, top-off injection, and smaller emittance. This makes SPEAR3 one of the most productive light sources in the world. Now to further enhance the performance of SPEAR3, we are looking into the possibility of converting SPEAR3 to an ultra-low emittance storage ring within its site constraint.

Multisource inverse-geometry CT. Part II. X-ray source design and prototype

PubMed Central

Neculaes, V. Bogdan; Caiafa, Antonio; Cao, Yang; De Man, Bruno; Edic, Peter M.; Frutschy, Kristopher; Gunturi, Satish; Inzinna, Lou; Reynolds, Joseph; Vermilyea, Mark; Wagner, David; Zhang, Xi; Zou, Yun; Pelc, Norbert J.; Lounsberry, Brian

2016-01-01

Purpose: This paper summarizes the development of a high-power distributed x-ray source, or “multisource,” designed for inverse-geometry computed tomography (CT) applications [see B. De Man et al., “Multisource inverse-geometry CT. Part I. System concept and development,” Med. Phys. 43, 4607–4616 (2016)]. The paper presents the evolution of the source architecture, component design (anode, emitter, beam optics, control electronics, high voltage insulator), and experimental validation. Methods: Dispenser cathode emitters were chosen as electron sources. A modular design was adopted, with eight electron emitters (two rows of four emitters) per module, wherein tungsten targets were brazed onto copper anode blocks—one anode block per module. A specialized ceramic connector provided high voltage standoff capability and cooling oil flow to the anode. A matrix topology and low-noise electronic controls provided switching of the emitters. Results: Four modules (32 x-ray sources in two rows of 16) have been successfully integrated into a single vacuum vessel and operated on an inverse-geometry computed tomography system. Dispenser cathodes provided high beam current (>1000 mA) in pulse mode, and the electrostatic lenses focused the current beam to a small optical focal spot size (0.5 × 1.4 mm). Controlled emitter grid voltage allowed the beam current to be varied for each source, providing the ability to modulate beam current across the fan of the x-ray beam, denoted as a virtual bowtie filter. The custom designed controls achieved x-ray source switching in <1 μs. The cathode-grounded source was operated successfully up to 120 kV. Conclusions: A high-power, distributed x-ray source for inverse-geometry CT applications was successfully designed, fabricated, and operated. Future embodiments may increase the number of spots and utilize fast read out detectors to increase the x-ray flux magnitude further, while still staying within the stationary target inherent thermal limitations. PMID:27487878

Sensitivity of Beam Parameters to a Station C Solenoid Scan on Axis II

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schulze, Martin E.

Magnet scans are a standard technique for determining beam parameters in accelerators. Beam parameters are inferred from spot size measurements using a model of the beam optics. The sensitivity of the measured beam spot size to the beam parameters is investigated for typical DARHT Axis II beam energies and currents. In a typical S4 solenoid scan, the downstream transport is tuned to achieve a round beam at Station C with an envelope radius of about 1.5 cm with a very small divergence with S4 off. The typical beam energy and current are 16.0 MeV and 1.625 kA. Figures 1-3 showmore » the sensitivity of the bean size at Station C to the emittance, initial radius and initial angle respectively. To better understand the relative sensitivity of the beam size to the emittance, initial radius and initial angle, linear regressions were performed for each parameter as a function of the S4 setting. The results are shown in Figure 4. The measured slope was scaled to have a maximum value of 1 in order to present the relative sensitivities in a single plot. Figure 4 clearly shows the beam size at the minimum of the S4 scan is most sensitive to emittance and relatively insensitive to initial radius and angle as expected. The beam emittance is also very sensitive to the beam size of the converging beam and becomes insensitive to the beam size of the diverging beam. Measurements of the beam size of the diverging beam provide the greatest sensitivity to the initial beam radius and to a lesser extent the initial beam angle. The converging beam size is initially very sensitive to the emittance and initial angle at low S4 currents. As the S4 current is increased the sensitivity to the emittance remains strong while the sensitivity to the initial angle diminishes.« less

Multisource inverse-geometry CT. Part II. X-ray source design and prototype

DOE Office of Scientific and Technical Information (OSTI.GOV)

Neculaes, V. Bogdan, E-mail: neculaes@ge.com; Caia

2016-08-15

Purpose: This paper summarizes the development of a high-power distributed x-ray source, or “multisource,” designed for inverse-geometry computed tomography (CT) applications [see B. De Man et al., “Multisource inverse-geometry CT. Part I. System concept and development,” Med. Phys. 43, 4607–4616 (2016)]. The paper presents the evolution of the source architecture, component design (anode, emitter, beam optics, control electronics, high voltage insulator), and experimental validation. Methods: Dispenser cathode emitters were chosen as electron sources. A modular design was adopted, with eight electron emitters (two rows of four emitters) per module, wherein tungsten targets were brazed onto copper anode blocks—one anode blockmore » per module. A specialized ceramic connector provided high voltage standoff capability and cooling oil flow to the anode. A matrix topology and low-noise electronic controls provided switching of the emitters. Results: Four modules (32 x-ray sources in two rows of 16) have been successfully integrated into a single vacuum vessel and operated on an inverse-geometry computed tomography system. Dispenser cathodes provided high beam current (>1000 mA) in pulse mode, and the electrostatic lenses focused the current beam to a small optical focal spot size (0.5 × 1.4 mm). Controlled emitter grid voltage allowed the beam current to be varied for each source, providing the ability to modulate beam current across the fan of the x-ray beam, denoted as a virtual bowtie filter. The custom designed controls achieved x-ray source switching in <1 μs. The cathode-grounded source was operated successfully up to 120 kV. Conclusions: A high-power, distributed x-ray source for inverse-geometry CT applications was successfully designed, fabricated, and operated. Future embodiments may increase the number of spots and utilize fast read out detectors to increase the x-ray flux magnitude further, while still staying within the stationary target inherent thermal limitations.« less

Comparative study of active plasma lenses in high-quality electron accelerator transport lines

NASA Astrophysics Data System (ADS)

van Tilborg, J.; Barber, S. K.; Benedetti, C.; Schroeder, C. B.; Isono, F.; Tsai, H.-E.; Geddes, C. G. R.; Leemans, W. P.

2018-05-01

Electrically discharged active plasma lenses (APLs) are actively pursued in compact high-brightness plasma-based accelerators due to their high-gradient, tunable, and radially symmetric focusing properties. In this manuscript, the APL is experimentally compared with a conventional quadrupole triplet, highlighting the favorable reduction in the energy dependence (chromaticity) in the transport line. Through transport simulations, it is explored how the non-uniform radial discharge current distribution leads to beam-integrated emittance degradation and a charge density reduction at focus. However, positioning an aperture at the APL entrance will significantly reduce emittance degradation without additional loss of charge in the high-quality core of the beam. An analytical model is presented that estimates the emittance degradation from a short beam driving a longitudinally varying wakefield in the APL. Optimizing laser plasma accelerator operation is discussed where emittance degradation from the non-uniform discharge current (favoring small beams inside the APL) and wakefield effects (favoring larger beam sizes) is minimized.

Comparative study of active plasma lenses in high-quality electron accelerator transport lines

DOE Office of Scientific and Technical Information (OSTI.GOV)

van Tilborg, J.; Barber, S. K.; Benedetti, C.

Electrically discharged active plasma lenses (APLs) are actively pursued in compact high-brightness plasma-based accelerators due to their high-gradient, tunable, and radially symmetric focusing properties. In this paper, the APL is experimentally compared with a conventional quadrupole triplet, highlighting the favorable reduction in the energy dependence (chromaticity) in the transport line. Through transport simulations, it is explored how the non-uniform radial discharge current distribution leads to beam-integrated emittance degradation and a charge density reduction at focus. However, positioning an aperture at the APL entrance will significantly reduce emittance degradation without additional loss of charge in the high-quality core of the beam.more » An analytical model is presented that estimates the emittance degradation from a short beam driving a longitudinally varying wakefield in the APL. Finally, optimizing laser plasma accelerator operation is discussed where emittance degradation from the non-uniform discharge current (favoring small beams inside the APL) and wakefield effects (favoring larger beam sizes) is minimized.« less

Lattice and beam optics design for suppression of CSR-induced emittance growth at the KEK-ERL test facility

NASA Astrophysics Data System (ADS)

Shimada, M.; Yokoya, K.; Suwada, T.; Enomoto, A.

2007-06-01

The lattice and beam optics of the arc section of the KEK-ERL test facility, having an energy of 200 MeV, were optimized to efficiently suppress emittance growth based on a simulation using a particle-tracking method taking coherent synchrotron radiation effects into account. The lattice optimization in the arc section was performed under two conditions: a high-current mode with a bunch charge of 76.9 pC without bunch compression, and a short-bunch mode with bunch compression, producing a final bunch length of around 0.1 ps. The simulation results showed that, in the high-current mode, emittance growth was efficiently suppressed by keeping a root-mean-square (rms) bunch length of 1 ps at a bunch charge of 76.9 pC, and in the short-bunch mode, emittance growth was kept within permissible limits with a maximum allowable bunch charge of 23.1 pC at an rms bunch length of 0.1 ps.

Comparative study of active plasma lenses in high-quality electron accelerator transport lines

DOE PAGES

van Tilborg, J.; Barber, S. K.; Benedetti, C.; ...

2018-03-13

Electrically discharged active plasma lenses (APLs) are actively pursued in compact high-brightness plasma-based accelerators due to their high-gradient, tunable, and radially symmetric focusing properties. In this paper, the APL is experimentally compared with a conventional quadrupole triplet, highlighting the favorable reduction in the energy dependence (chromaticity) in the transport line. Through transport simulations, it is explored how the non-uniform radial discharge current distribution leads to beam-integrated emittance degradation and a charge density reduction at focus. However, positioning an aperture at the APL entrance will significantly reduce emittance degradation without additional loss of charge in the high-quality core of the beam.more » An analytical model is presented that estimates the emittance degradation from a short beam driving a longitudinally varying wakefield in the APL. Finally, optimizing laser plasma accelerator operation is discussed where emittance degradation from the non-uniform discharge current (favoring small beams inside the APL) and wakefield effects (favoring larger beam sizes) is minimized.« less

Diminiode thermionic conversion with 111-iridium electrodes

NASA Technical Reports Server (NTRS)

Koeger, E. W.; Bair, V. L.; Morris, J. F.

1976-01-01

Preliminary data indicating thermionic-conversion potentialities for a 111-iridium emitter and collector spaced 0.2 mm apart are presented. These results comprise output densities of current and of power as functions of voltage for three sets of emitter, collector, and reservoir temperatures: 1553, 944, 561 K; 1605, 898, 533 K; and 1656, 1028, 586 K. For the 1605 K evaluation, estimates produced work-function values of 2.22 eV for the emitter and 1.63 eV for the collector with a 2.0-eV barrier index (collector work function plus interelectrode voltage drop) corresponding to the maximum output of 5.5 W/sq cm at 0.24 volt. The current, voltage curve for the 1656 K 111-iridium diminiode yields a 6.2 W/sq cm maximum at 0.25 volt and is comparable with the 1700 K envelope for a diode with an etched-rhenium emitter and a 0.025-mm electrode gap made by TECO and evaluated by NASA.

Graphene electron cannon: High-current edge emission from aligned graphene sheets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Jianlong; Li, Nannan; Guo, Jing

2014-01-13

High-current field emitters are made by graphene paper consist of aligned graphene sheets. Field emission luminance pattern shows that their electron beams can be controlled by rolling the graphene paper from sheet to cylinder. These specific electron beams would be useful to vacuum devices and electron beam lithograph. To get high-current emission, the graphene paper is rolled to array and form graphene cannon. Due to aligned emission array, graphene cannon have high emission current. Besides high emission current, the graphene cannon is also tolerable with excellent emission stability. With good field emission properties, these aligned graphene emitters bring application insight.

Highly stable field emission from ZnO nanowire field emitters controlled by an amorphous indium–gallium–zinc-oxide thin film transistor

NASA Astrophysics Data System (ADS)

Li, Xiaojie; Wang, Ying; Zhang, Zhipeng; Ou, Hai; She, Juncong; Deng, Shaozhi; Xu, Ningsheng; Chen, Jun

2018-04-01

Lowering the driving voltage and improving the stability of nanowire field emitters are essential for them to be applied in devices. In this study the characteristics of zinc oxide (ZnO) nanowire field emitter arrays (FEAs) controlled by an amorphous indium–gallium–zinc-oxide thin film transistor (a-IGZO TFT) were studied. A low driving voltage along with stabilization of the field emission current were achieved. Modulation of field emission currents up to three orders of magnitude was achieved at a gate voltage of 0–32 V for a constant anode voltage. Additionally, a-IGZO TFT control can dramatically reduce the emission current fluctuation (i.e., from 46.11 to 1.79% at an emission current of ∼3.7 µA). Both the a-IGZO TFT and ZnO nanowire FEAs were prepared on glass substrates in our research, demonstrating the feasibility of realizing large area a-IGZO TFT-controlled ZnO nanowire FEAs.

On the AlGaInP-bulk and AlGaInP/GaAs-superlattice confinement effects for heterostructure-emitter bipolar transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tsai, Jung-Hui, E-mail: jhtsai@nknucc.nknu.edu.tw

2015-02-09

The confinement effect and electrical characteristics of heterostructure-emitter bipolar transistors with an AlGaInP bulk-confinement layer and an AlGaInP/GaAs superlattice-confinement layer are first demonstrated and compared by experimentally results. In the two devices, the relatively large valence band discontinuity at AlGaInP/GaAs heterojunction provides excellent confinement effect for holes to enhance current gain. As to the AlGaInP/GaAs superlattice-confinement device, part of thermionic-emission electrons will be trapped in the GaAs quantum wells of the superlattice. This will result in lower collector current and current gain as compared with the bulk-confinement device. Nevertheless, the superlattice-confinement device exhibits a larger current-gain cutoff frequency, which canmore » be attributed that the tunneling behavior is included in the carrier transportation and transporting time across the emitter region could be substantially reduced.« less

ELECTRONIC INTEGRATING CIRCUIT

DOEpatents

Englemann, R.H.

1963-08-20

An electronic integrating circuit using a transistor with a capacitor connected between the emitter and collector through which the capacitor discharges at a rate proportional to the input current at the base is described. Means are provided for biasing the base with an operating bias and for applying a voltage pulse to the capacitor for charging to an initial voltage. A current dividing diode is connected between the base and emitter of the transistor, and signal input terminal means are coupled to the juncture of the capacitor and emitter and to the base of the transistor. At the end of the integration period, the residual voltage on said capacitor is less by an amount proportional to the integral of the input signal. Either continuous or intermittent periods of integration are provided. (AEC)

Tunneling modulation of a quantum-well transistor laser

NASA Astrophysics Data System (ADS)

Feng, M.; Qiu, J.; Wang, C. Y.; Holonyak, N.

2016-11-01

Different than the Bardeen and Brattain transistor (1947) with the current gain depending on the ratio of the base carrier spontaneous recombination lifetime to the emitter-collector transit time, the Feng and Holonyak transistor laser current gain depends upon the base electron-hole (e-h) stimulated recombination, the base dielectric relaxation transport, and the collector stimulated tunneling. For the n-p-n transistor laser tunneling operation, the electron-hole pairs are generated at the collector junction under the influence of intra-cavity photon-assisted tunneling, with electrons drifting to the collector and holes drifting to the base. The excess charge in the base lowers the emitter junction energy barrier, allowing emitter electron injection into the base and satisfying charge neutrality via base dielectric relaxation transport (˜femtoseconds). The excess electrons near the collector junction undergo stimulated recombination at the base quantum-well or transport to the collector, thus supporting tunneling current amplification and optical modulation of the transistor laser.

Generation of low-emittance electron beams in electrostatic accelerators for FEL applications

NASA Astrophysics Data System (ADS)

Chen, Teng; Elias, Luis R.

1995-02-01

This paper reports results of transverse emittance studies and beam propagation in electrostatic accelerators for free electron laser applications. In particular, we discuss emittance growth analysis of a low current electron beam system consisting of a miniature thermoionic electron gun and a National Electrostatics Accelerator (NEC) tube. The emittance growth phenomenon is discussed in terms of thermal effects in the electron gun cathode and aberrations produced by field gradient changes occurring inside the electron gun and throughout the accelerator tube. A method of reducing aberrations using a magnetic solenoidal field is described. Analysis of electron beam emittance was done with the EGUN code. Beam propagation along the accelerator tube was studied using a cylindrically symmetric beam envelope equation that included beam self-fields and the external accelerator fields which were derived from POISSON simulations.

Boundary conditions on the plasma emitter surface in the presence of a particle counter flow: I. Ion emitter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Astrelin, V. T., E-mail: V.T.Astrelin@inp.nsk.su; Kotelnikov, I. A.

Emission of positively charged ions from a plasma emitter irradiated by a counterpropagating electron beam is studied theoretically. A bipolar diode with a plasma emitter in which the ion temperature is lower than the electron temperature and the counter electron flow is extracted from the ion collector is calculated in the one-dimensional model. An analog of Bohm’s criterion for ion emission in the presence of a counterpropagating electron beam is derived. The limiting density of the counterpropagating beam in a bipolar diode operating in the space-charge-limited-emission regime is calculated. The full set of boundary conditions on the plasma emitter surfacemore » that are required for operation of the high-current optics module in numerical codes used to simulate charged particle sources is formulated.« less

Performance of a thermionic converter module utilizing emitter and collector heat pipes

NASA Technical Reports Server (NTRS)

Kroeger, E. W.; Morris, J. F.; Miskolczy, G.; Lieb, D. P.; Goodale, D. B.

1978-01-01

A thermionic converter module simulating a configuration for an out-of-core thermionic nuclear reactor was designed, fabricated, and tested. The module consists of three cylindrical thermionic converters. The tungsten emitter of the converter is heated by a tungsten, lithium heat pipe. The emitter heat pipes are immersed in a furnace, insulated by MULTI-FOIL thermal insulation, and heated by tungsten radiation filaments. The performance of each thermionic converter was characterized before assembly into the module. Dynamic voltage, current curves were taken using a 60 Hz sweep and computerized data acquisition over a range of emitter, collector, and cesium-reservoir temperatures. An output power of 215 W was observed at an emitter temperature of 1750 K and a collector temperature of 855 K for a two diode module. With a three diode module, an output power of 270 W was observed at an average emitter temperature of 1800 K and a Collector temperature of 875 K.

A universal formula for the field enhancement factor

NASA Astrophysics Data System (ADS)

Biswas, Debabrata

2018-04-01

The field enhancement factor (FEF) is an important quantity in field emission calculations since the tunneling electron current depends very sensitively on its magnitude. The exact dependence of FEF on the emitter height h, the radius of curvature at the apex Ra, as well as the shape of the emitter base are still largely unknown. In this work, a universal formula for the field enhancement factor is derived for a single emitter. It depends on the ratio h/Ra and has the form γ a = ( 2 h / R a ) / [ α 1 ln ( 4 h / R a ) - α 2 ] , where α1 and α2 depend on the charge distribution on the emitter. Numerical results show that a simpler form γ a = ( 2 h / R a ) / [ ln ( 4 h / R a ) - α ] is equally valid with α depending on the emitter-base. Thus, for the hyperboloid, conical, and ellipsoid emitters, the value of α is 0, 0.88, and 2, while for the cylindrical base, α ≃ 2.6.

Lateral carrier diffusion and current gain in terahertz InGaAs/InP double-heterojunction bipolar transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chiang, Han-Wei; Rode, Johann C.; Choudhary, Prateek

2014-01-21

The DC current gain in In{sub 0.53}Ga{sub 0.47}As/InP double-heterojunction bipolar transistors is computed based on a drift-diffusion model, and is compared with experimental data. Even in the absence of other scaling effects, lateral diffusion of electrons to the base Ohmic contacts causes a rapid reduction in DC current gain as the emitter junction width and emitter-base contact spacing are reduced. The simulation and experimental data are compared in order to examine the effect of carrier lateral diffusion on current gain. The impact on current gain due to device scaling and approaches to increase current gain are discussed.

Characterization of the heavily doped emitter and junction regions of silicon solar cells using an electron beam

NASA Technical Reports Server (NTRS)

Luke, K. L.; Cheng, L.-J.

1986-01-01

Heavily doped emitter and junction regions of silicon solar cells are investigated by means of the electron-beam-induced-current (EBIC) technique. Although the experimental EBIC data are collected under three-dimensional conditions, it is analytically demonstrated with two numerical examples that the solutions obtained with one-dimensional numerical modeling are adequate. EBIC data for bare and oxide-covered emitter surfaces are compared with theory. The improvement in collection efficiency when an emitter surface is covered with a 100-A SiO2 film varies with beam energy; for a cell with a junction depth of 0.35 microns, the improvement is about 54 percent at 2 keV.

Highly reliable field electron emitters produced from reproducible damage-free carbon nanotube composite pastes with optimal inorganic fillers.

PubMed

Kim, Jae-Woo; Jeong, Jin-Woo; Kang, Jun-Tae; Choi, Sungyoul; Ahn, Seungjoon; Song, Yoon-Ho

2014-02-14

Highly reliable field electron emitters were developed using a formulation for reproducible damage-free carbon nanotube (CNT) composite pastes with optimal inorganic fillers and a ball-milling method. We carefully controlled the ball-milling sequence and time to avoid any damage to the CNTs, which incorporated fillers that were fully dispersed as paste constituents. The field electron emitters fabricated by printing the CNT pastes were found to exhibit almost perfect adhesion of the CNT emitters to the cathode, along with good uniformity and reproducibility. A high field enhancement factor of around 10,000 was achieved from the CNT field emitters developed. By selecting nano-sized metal alloys and oxides and using the same formulation sequence, we also developed reliable field emitters that could survive high-temperature post processing. These field emitters had high durability to post vacuum annealing at 950 °C, guaranteeing survival of the brazing process used in the sealing of field emission x-ray tubes. We evaluated the field emitters in a triode configuration in the harsh environment of a tiny vacuum-sealed vessel and observed very reliable operation for 30 h at a high current density of 350 mA cm(-2). The CNT pastes and related field emitters that were developed could be usefully applied in reliable field emission devices.

Highly reliable field electron emitters produced from reproducible damage-free carbon nanotube composite pastes with optimal inorganic fillers

NASA Astrophysics Data System (ADS)

Kim, Jae-Woo; Jeong, Jin-Woo; Kang, Jun-Tae; Choi, Sungyoul; Ahn, Seungjoon; Song, Yoon-Ho

2014-02-01

Highly reliable field electron emitters were developed using a formulation for reproducible damage-free carbon nanotube (CNT) composite pastes with optimal inorganic fillers and a ball-milling method. We carefully controlled the ball-milling sequence and time to avoid any damage to the CNTs, which incorporated fillers that were fully dispersed as paste constituents. The field electron emitters fabricated by printing the CNT pastes were found to exhibit almost perfect adhesion of the CNT emitters to the cathode, along with good uniformity and reproducibility. A high field enhancement factor of around 10 000 was achieved from the CNT field emitters developed. By selecting nano-sized metal alloys and oxides and using the same formulation sequence, we also developed reliable field emitters that could survive high-temperature post processing. These field emitters had high durability to post vacuum annealing at 950 °C, guaranteeing survival of the brazing process used in the sealing of field emission x-ray tubes. We evaluated the field emitters in a triode configuration in the harsh environment of a tiny vacuum-sealed vessel and observed very reliable operation for 30 h at a high current density of 350 mA cm-2. The CNT pastes and related field emitters that were developed could be usefully applied in reliable field emission devices.

The gas phase emitter effect of lanthanum within ceramic metal halide lamps and its dependence on the La vapor pressure and operating frequency

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ruhrmann, C.; Hoebing, T.; Bergner, A.

2015-08-07

The gas phase emitter effect increases the lamp lifetime by lowering the work function and, with it, the temperature of the tungsten electrodes of metal halide lamps especially for lamps in ceramic vessels due to their high rare earth pressures. It is generated by a monolayer on the electrode surface of electropositive atoms of certain emitter elements, which are inserted into the lamp bulb by metal iodide salts. They are vaporized, dissociated, ionized, and deposited by an emitter ion current onto the electrode surface within the cathodic phase of lamp operation with a switched-dc or ac-current. The gas phase emittermore » effect of La and the influence of Na on the emitter effect of La are studied by spatially and phase-resolved pyrometric measurements of the electrode tip temperature, La atom, and ion densities by optical emission spectroscopy as well as optical broadband absorption spectroscopy and arc attachment images by short time photography. An addition of Na to the lamp filling increases the La vapor pressure within the lamp considerably, resulting in an improved gas phase emitter effect of La. Furthermore, the La vapor pressure is raised by a heating of the cold spot. In this way, conditions depending on the La vapor pressure and operating frequency are identified, at which the temperature of the electrodes becomes a minimum.« less

Large area tunnel oxide passivated rear contact n -type Si solar cells with 21.2% efficiency: Large area tunnel oxide passivated rear contact n -type Si solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tao, Yuguo; Upadhyaya, Vijaykumar; Chen, Chia-Wei

This paper reports on the implementation of carrier-selective tunnel oxide passivated rear contact for high-efficiency screen-printed large area n-type front junction crystalline Si solar cells. It is shown that the tunnel oxide grown in nitric acid at room temperature (25°C) and capped with n+ polysilicon layer provides excellent rear contact passivation with implied open-circuit voltage iVoc of 714mV and saturation current density J0b of 10.3 fA/cm2 for the back surface field region. The durability of this passivation scheme is also investigated for a back-end high temperature process. In combination with an ion-implanted Al2O3-passivated boron emitter and screen-printed front metal grids,more » this passivated rear contact enabled 21.2% efficient front junction Si solar cells on 239 cm2 commercial grade n-type Czochralski wafers.« less

Exciton dynamics of C60-based single-photon emitters explored by Hanbury Brown-Twiss scanning tunnelling microscopy.

PubMed

Merino, P; Große, C; Rosławska, A; Kuhnke, K; Kern, K

2015-09-29

Exciton creation and annihilation by charges are crucial processes for technologies relying on charge-exciton-photon conversion. Improvement of organic light sources or dye-sensitized solar cells requires methods to address exciton dynamics at the molecular scale. Near-field techniques have been instrumental for this purpose; however, characterizing exciton recombination with molecular resolution remained a challenge. Here, we study exciton dynamics by using scanning tunnelling microscopy to inject current with sub-molecular precision and Hanbury Brown-Twiss interferometry to measure photon correlations in the far-field electroluminescence. Controlled injection allows us to generate excitons in solid C60 and let them interact with charges during their lifetime. We demonstrate electrically driven single-photon emission from localized structural defects and determine exciton lifetimes in the picosecond range. Monitoring lifetime shortening and luminescence saturation for increasing carrier injection rates provides access to charge-exciton annihilation dynamics. Our approach introduces a unique way to study single quasi-particle dynamics on the ultimate molecular scale.

Multi-spectral investigation of bulk and facet failures in high-power single emitters at 980 nm

NASA Astrophysics Data System (ADS)

Yanson, Dan; Levy, Moshe; Shamay, Moshe; Cohen, Shalom; Shkedy, Lior; Berk, Yuri; Tessler, Renana; Klumel, Genadi; Rappaport, Noam; Karni, Yoram

2013-03-01

Reliable single emitters delivering >10W in the 9xx nm spectral range, are common building blocks for fiber laser pumps. As facet passivation techniques can suppress or delay catastrophic optical mirror damage (COMD) extending emitter reliability into hundreds of thousands of hours, other, less dominant, failure modes such as intra-chip catastrophic optical bulk damage (COBD) become apparent. Based on our failure statistics in high current operation, only ~52% of all failures can be attributed to COMD. Imaging through a window opened in the metallization on the substrate (n) side of a p-side down mounted emitter provides valuable insight into both COMD and COBD failure mechanisms. We developed a laser ablation process to define a window on the n-side of an InGaAs/AlGaAs 980nm single emitter that is overlaid on the pumped 90μm stripe on the p-side. The ablation process is compatible with the chip wire-bonding, enabling the device to be operated at high currents with high injection uniformity. We analyzed both COMD and COBD failed emitters in the electroluminescence and mid-IR domains supported by FIB/SEM observation. The ablated devices revealed branching dark line patterns, with a line origin either at the facet center (COMD case) or near the stripe edge away from the facet (COBD case). In both cases, the branching direction is always toward the rear facet (against the photon density gradient), with SEM images revealing a disordered active layer structure. Absorption levels between 0.22eV - 0.55eV were observed in disordered regions by FT-IR spectroscopy. Temperature mapping of a single emitter in the MWIR domain was performed using an InSb detector. We also report an electroluminescence study of a single emitter just before and after failure.

High-current electron gun with a planar magnetron integrated with an explosive-emission cathode

NASA Astrophysics Data System (ADS)

Kiziridi, P. P.; Ozur, G. E.

2017-05-01

A new high-current electron gun with plasma anode and explosive-emission cathode integrated with planar pulsed powered magnetron is described. Five hundred twelve copper wires 1 mm in diameter and 15 mm in height serve as emitters. These emitters are installed on stainless steel disc (substrate) with 3-mm distance between them. Magnetron discharge plasma provides increased ion density on the periphery of plasma anode formed by high-current Penning discharge ignited within several milliseconds after starting of the magnetron discharge. The increased on the periphery ion density improves the uniformity of high-current electron beam produced in such an electron gun.

Derivation and correction of the Tsu-Esaki tunneling current formula

NASA Astrophysics Data System (ADS)

Bandara, K. M. S. V.; Coon, D. D.

1989-07-01

The theoretical basis of the Tsu-Esaki tunneling current formula [Appl. Phys. Lett. 22, 562 (1973)] is examined in detail and corrections are found. The starting point is an independent particle picture with fully antisymmetrized N-electron wave functions. Unitarity is used to resolve an orthonormality issue raised in earlier work. A new set of mutually consistent equations is derived for bias voltage, tunneling current, and electron densities in the emitter and collector. Corrections include a previously noted kinematic factor and a modification of emitter and collector Fermi levels. The magnitude of the corrections is illustrated numerically for the case of a resonant tunneling current-voltage characteristic.

Recent Progress in Silicon-Based MEMS Field Emission Thrusters

NASA Astrophysics Data System (ADS)

Lenard, Roger X.; Kravitz, Stanley H.; Tajmar, Martin

2005-02-01

The Indium Field Emission Thruster (In-FET) is a highly characterized and space-proven device based on space-qualified liquid metal ion sources. There is also extensive experience with liquid metal ion sources for high-brightness semiconductor fabrications and inspection Like gridded ion engines, In-FETs efficiently accelerate ions through a series of high voltage electrodes. Instead of a plasma discharge to generate ions, which generates a mixture of singly and doubly charged ions as well as neutrals, indium metal is melted (157°C) and fed to the tip of a capillary tube where very high local electric fields perform more-efficient field emission ionization, providing nearly 100% singly charged species. In-FETs do not have the associated losses or lifetime concerns of a magnetically confined discharge and hollow cathode in ion thrusters. For In-FETs, propellant efficiencies ˜100% stipulate single-emitter currents ⩽10μA, perhaps as low as 5μA of current. This low emitter current results in ⩽0.5 W/emitter. Consequently, if the In-FET is to be used for future Human and Robotic missions under President Bush's Exploration plan, a mechanism to generate very high power levels is necessary. Efficient high-power operation requires many emitter/extractor pairs. Conventional fabrication techniques allow 1-10 emitters in a single module, with pain-staking precision required. Properly designed and fabricated In-FETs possess electric-to-jet efficiency >90% and a specific mass <0.25 kg/kWe. MEMS techniques allow reliable batch processing with ˜160,000 emitters in a 10×10-cm array. Developing a 1.5kW 10×10-cm module is a necessary stepping-stone for >500 kWe systems where groups of 9 or 16 modules, with a single PPU/feed system, form the building blocks for even higher-power exploration systems. In 2003, SNL and ARCS produced a MEMS-based In-FET 5×5 emitter module with individually addressable emitter/extractor pairs on a 15×15mm wafer. The first MEMS thruster prototype has already been tested to demonstrate the proof-of-concept in laboratory-scale testing. In this paper we discuss progress that has been achieved in the past year on fabricating silicon-based MEMS In-FETs.

On the Possibility of Creating a Point-Like Neutron Source

NASA Astrophysics Data System (ADS)

Golubev, S. V.; Skalyga, V. A.; Izotov, I. V.; Sidorov, A. V.; Razin, S. V.; Shaposhnikov, R. A.; Lapin, R. L.; Bokhanov, A. F.; Kazakov, M. Yu.

2018-03-01

We consider the possibility of creating a compact high-power neutron generator with a small emitting area (of the order of 100 μm) and a neutron yield of 1010s-1 on the basis of a deuterium-deuterium fusion reaction (or 1012 s-1 on the basis of a deuterium-tritium fusion reaction). The fusion takes place under bombardment of a deuterium- (or tritium-) saturated target by a high-current (about 100 mA) focused deuterium ion beam with an energy of 100 keV. The ion beam with total current at a level of hundreds of milliamperes and small emittance (less than 0.1 π·mm·mrad), which is crucial for sharp focusing, can be generated by a quasi-gas-dynamic ion source of a new generation created on the basis of a discharge in an open magnetic trap sustained by high-power electromagnetic radiation of the millimeter wavelength range under electron cyclotron resonance conditions. Simulations of the focusing system for the experimentally obtained ion beam show the possibility to create a deuterium ion beam with a transverse size of 200 μm on the neutron-forming target. Prospects for using such a neutron source for neutron tomography are discussed.

Two-dimensional numerical simulation of boron diffusion for pyramidally textured silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ma, Fa-Jun, E-mail: Fajun.Ma@nus.edu.sg; Duttagupta, Shubham; Department of Electrical and Computer Engineering, National University of Singapore, 4 Engineering Drive 3, 117576

2014-11-14

Multidimensional numerical simulation of boron diffusion is of great relevance for the improvement of industrial n-type crystalline silicon wafer solar cells. However, surface passivation of boron diffused area is typically studied in one dimension on planar lifetime samples. This approach neglects the effects of the solar cell pyramidal texture on the boron doping process and resulting doping profile. In this work, we present a theoretical study using a two-dimensional surface morphology for pyramidally textured samples. The boron diffusivity and segregation coefficient between oxide and silicon in simulation are determined by reproducing measured one-dimensional boron depth profiles prepared using different boronmore » diffusion recipes on planar samples. The established parameters are subsequently used to simulate the boron diffusion process on textured samples. The simulated junction depth is found to agree quantitatively well with electron beam induced current measurements. Finally, chemical passivation on planar and textured samples is compared in device simulation. Particularly, a two-dimensional approach is adopted for textured samples to evaluate chemical passivation. The intrinsic emitter saturation current density, which is only related to Auger and radiative recombination, is also simulated for both planar and textured samples. The differences between planar and textured samples are discussed.« less

IBS simulation with different RF configurations in RHIC

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, C.; Fedotov, A.; Minty, M.

It is a crucial task to understand the beam emittance growth during RHIC cycle and the underlying causes. One would benefit not just for the current operation of RHIC, also for the design of eRHIC. This report focuses on the Intra-Beam Scattering (IBS) contribution to the emittance growth of the proton beam with two different configurations of RF system. The answers to these questions will be given in the end of the report; can IBS explain the emittance growth all alone? What’s the difference of IBS growth rates for different RF configurations?

Large area InN terahertz emitters based on the lateral photo-Dember effect

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wallauer, Jan, E-mail: jan.wallauer@fmf.uni-freiburg.de; Grumber, Christian; Walther, Markus

2015-09-14

Large area terahertz emitters based on the lateral photo-Dember effect in InN (indium nitride) are presented. The formation of lateral photo-Dember currents is induced by laser-illumination through a microstructured metal cover processed onto the InN substrate, causing an asymmetry in the lateral photogenerated charge carrier distribution. Our design uses simple metal structures, which are produced by conventional two-dimensional micro-structuring techniques. Having favoring properties as a photo-Dember material InN is particularly well-suited as a substrate for our emitters. We demonstrate that the emission intensity of the emitters can be significantly influenced by the structure of the metal cover leaving room formore » improvement by optimizing the masking structures.« less

Studies of silicon p-n junction solar cells

NASA Technical Reports Server (NTRS)

Neugroschel, A.; Lindholm, F. A.

1979-01-01

To provide theoretical support for investigating different ways to obtain high open-circuit voltages in p-n junction silicon solar cells, an analytical treatment of heavily doped transparent-emitter devices is presented that includes the effects of bandgap narrowing, Fermi-Dirac statistics, a doping concentration gradient, and a finite surface recombination velocity at the emitter surface. Topics covered include: (1) experimental determination of bandgap narrowing in the emitter of silicon p-n junction devices; (2) heavily doped transparent regions in junction solar cells, diodes, and transistors; (3) high-low-emitter solar cell; (4) determination of lifetimes and recombination currents in p-n junction solar cells; (5) MOS and oxide-charged-induced BSF solar cells; and (6) design of high efficiency solar cells for space and terrestrial applications.

Coherent beam combining architectures for high power tapered laser arrays

NASA Astrophysics Data System (ADS)

Schimmel, G.; Janicot, S.; Hanna, M.; Decker, J.; Crump, P.; Erbert, G.; Witte, U.; Traub, M.; Georges, P.; Lucas-Leclin, G.

2017-02-01

Coherent beam combining (CBC) aims at increasing the spatial brightness of lasers. It consists in maintaining a constant phase relationship between different emitters, in order to combine them constructively in one single beam. We have investigated the CBC of an array of five individually-addressable high-power tapered laser diodes at λ = 976 nm, in two architectures: the first one utilizes the self-organization of the lasers in an interferometric extended-cavity, which ensures their mutual coherence; the second one relies on the injection of the emitters by a single-frequency laser diode. In both cases, the coherent combining of the phase-locked beams is ensured on the front side of the array by a transmission diffractive grating with 98% efficiency. The passive phase-locking of the laser bar is obtained up to 5 A (per emitter). An optimization algorithm is implemented to find the proper currents in the five ridge sections that ensured the maximum combined power on the front side. Under these conditions we achieve a maximum combined power of 7.5 W. In the active MOPA configuration, we can increase the currents in the tapered sections up to 6 A and get a combined power of 11.5 W, corresponding to a combining efficiency of 76%. It is limited by the beam quality of the tapered emitters and by fast phase fluctuations between emitters. Still, these results confirm the potential of CBC approaches with tapered lasers to provide a high-power and high-brightness beam, and compare with the current state-of-the-art with laser diodes.

The First NREL Conference on thermophotovoltaic generation of electricity: Proceedings

DOE Office of Scientific and Technical Information (OSTI.GOV)

Not Available

1994-08-01

This collection of abstracts from the July 1994 meeting contains various information on thermophotovoltaic (TPV) conversion and converters. Discussed topics include: the current status of TPV conversion, TPV tutorials, heat source and emitter technologies, advanced TPV devices, selective emitter theory and practice, programmatic and systems issues, device fundamentals, and device and material characterization.

On the Ionization and Ion Transmission Efficiencies of Different ESI-MS Interfaces

PubMed Central

Cox, Jonathan T.; Marginean, Ioan; Smith, Richard D.; Tang, Keqi

2014-01-01

The achievable sensitivity of electrospray ionization mass spectrometry (ESI-MS) is largely determined by the ionization efficiency in the ESI source and ion transmission efficiency through the ESI-MS interface. These performance characteristics are difficult to evaluate and compare across multiple platforms as it is difficult to correlate electrical current measurements to actual analyte ions reaching the detector of a mass spectrometer. We present an effective method to evaluate the overall ion utilization efficiency of an ESI-MS interface by measuring the total gas phase ion current transmitted through the interface and correlating it to the observed ion abundance measured in the corresponding mass spectrum. Using this method we systematically studied the ion transmission and ionization efficiencies of different ESI-MS interface configurations, including a single emitter/single inlet capillary, single emitter/multi-inlet capillary, and a subambient pressure ionization with nanoelectrospray (SPIN) MS interface with a single emitter and an emitter array, respectively. Our experimental results indicate that the overall ion utilization efficiency of SPIN-MS interface configurations exceeds that of the inlet capillary-based ESI-MS interface configurations. PMID:25267087

On the ionization and ion transmission efficiencies of different ESI-MS interfaces.

PubMed

Cox, Jonathan T; Marginean, Ioan; Smith, Richard D; Tang, Keqi

2015-01-01

The achievable sensitivity of electrospray ionization mass spectrometry (ESI-MS) is largely determined by the ionization efficiency in the ESI source and ion transmission efficiency through the ESI-MS interface. These performance characteristics are difficult to evaluate and compare across multiple platforms as it is difficult to correlate electrical current measurements to actual analyte ions reaching the detector of a mass spectrometer. We present an effective method to evaluate the overall ion utilization efficiency of an ESI-MS interface by measuring the total gas-phase ion current transmitted through the interface and correlating it to the observed ion abundance measured in the corresponding mass spectrum. Using this method, we systematically studied the ion transmission and ionization efficiencies of different ESI-MS interface configurations, including a single emitter/single inlet capillary, single emitter/multi-inlet capillary, and a subambient pressure ionization with nanoelectrospray (SPIN) MS interface with a single emitter and an emitter array, respectively. Our experimental results indicate that the overall ion utilization efficiency of SPIN-MS interface configurations exceeds that of the inlet capillary-based ESI-MS interface configurations.

Demonstration of Current Profile Shaping using Double Dog-Leg Emittance Exchange Beam Line at Argonne Wakefield Accelerator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ha, Gwanghui; Cho, Moo-Hyun; Conde, Manoel

Emittance exchange (EEX) based longitudinal current profile shaping is the one of the promising current profile shaping technique. This method can generate high quality arbitrary current profiles under the ideal conditions. The double dog-leg EEX beam line was recently installed at the Argonne Wakefield Accelerator (AWA) to explore the shaping capability and confirm the quality of this method. To demonstrate the arbitrary current profile generation, several different transverse masks are applied to generate different final current profiles. The phase space slopes and the charge of incoming beam are varied to observe and suppress the aberrations on the ideal profile. Wemore » present current profile shaping results, aberrations on the shaped profile, and its suppression.« less

High current plasma electron emitter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fiksel, G.; Almagri, A.F.; Craig, D.

1995-07-01

A high current plasma electron emitter based on a miniature plasma source has been developed. The emitting plasma is created by a pulsed high current gas discharge. The electron emission current is 1 kA at 300 V at the pulse duration of 10 ms. The prototype injector described in this paper will be used for a 20 kA electrostatic current injection experiment in the Madison Symmetric Torus (MST) reversed-field pinch. The source will be replicated in order to attain this total current requirement. The source has a simple design and has proven very reliable in operation. A high emission current,more » small size (3.7 cm in diameter), and low impurity generation make the source suitable for a variety of fusion and technological applications.« less

Electron-phonon interaction in efficient perovskite blue emitters

NASA Astrophysics Data System (ADS)

Gong, Xiwen; Voznyy, Oleksandr; Jain, Ankit; Liu, Wenjia; Sabatini, Randy; Piontkowski, Zachary; Walters, Grant; Bappi, Golam; Nokhrin, Sergiy; Bushuyev, Oleksandr; Yuan, Mingjian; Comin, Riccardo; McCamant, David; Kelley, Shana O.; Sargent, Edward H.

2018-06-01

Low-dimensional perovskites have—in view of their high radiative recombination rates—shown great promise in achieving high luminescence brightness and colour saturation. Here we investigate the effect of electron-phonon interactions on the luminescence of single crystals of two-dimensional perovskites, showing that reducing these interactions can lead to bright blue emission in two-dimensional perovskites. Resonance Raman spectra and deformation potential analysis show that strong electron-phonon interactions result in fast non-radiative decay, and that this lowers the photoluminescence quantum yield (PLQY). Neutron scattering, solid-state NMR measurements of spin-lattice relaxation, density functional theory simulations and experimental atomic displacement measurements reveal that molecular motion is slowest, and rigidity greatest, in the brightest emitter. By varying the molecular configuration of the ligands, we show that a PLQY up to 79% and linewidth of 20 nm can be reached by controlling crystal rigidity and electron-phonon interactions. Designing crystal structures with electron-phonon interactions in mind offers a previously underexplored avenue to improve optoelectronic materials' performance.

Increase of intrinsic emittance induced by multiphoton photoemission from copper cathodes illuminated by femtosecond laser pulses

NASA Astrophysics Data System (ADS)

An, Chenjie; Zhu, Rui; Xu, Jun; Liu, Yaqi; Hu, Xiaopeng; Zhang, Jiasen; Yu, Dapeng

2018-05-01

Electron sources driven by femtosecond laser have important applications in many aspects, and the research about the intrinsic emittance is becoming more and more crucial. The intrinsic emittance of polycrystalline copper cathode, which was illuminated by femtosecond pulses (FWHM of the pulse duration was about 100 fs) with photon energies above and below the work function, was measured with an extremely low bunch charge (single-electron pulses) based on free expansion method. A minimum emittance was obtained at the photon energy very close to the effective work function of the cathode. When the photon energy decreased below the effective work function, emittance increased rather than decreased or flattened out to a constant. By investigating the dependence of photocurrent density on the incident laser intensity, we found the emission excited by pulsed photons with sub-work-function energies contained two-photon photoemission. In addition, the portion of two-photon photoemission current increased with the reduction of photon energy. We attributed the increase of emittance to the effect of two-photon photoemission. This work shows that conventional method of reducing the photon energy of excited light source to approach the room temperature limit of the intrinsic emittance may be infeasible for femtosecond laser. There would be an optimized photon energy value near the work function to obtain the lowest emittance for pulsed laser pumped photocathode.

Stability of field emission current from porous n-GaAs(110)

NASA Astrophysics Data System (ADS)

Tondare, V. N.; Naddaf, M.; Bhise, A. B.; Bhoraskar, S. V.; Joag, D. S.; Mandale, A. B.; Sainkar, S. R.

2002-02-01

Field electron emission from porous GaAs has been investigated. The emitter was prepared by anodic etching of n-GaAs (110) in 0.1 M HCl solution. The as-etched porous GaAs shows nonlinear Fowler-Nordheim (FN) characteristics, with a low onset voltage. The emitter, after operating for 6 h at the residual gas pressure of 1×10-8 mbar, shows a linear FN characteristics with a relatively high onset voltage and poor field emission current stability as compared to the as-etched emitter. The change in the behavior was attributed to the residual gas ion bombardment during field electron emission. X-ray photoelectron spectroscopic investigations were carried out on as-etched sample and the one which was studied for field emission. The studies indicate that the as-etched surface contains As2O3 and the surface after field electron emission for about 6 h becomes gallium rich. The presence of As2O3 seems to be a desirable feature for the stable field emission current.

Thermionic gas switch

DOEpatents

Hatch, G.L.; Brummond, W.A.; Barrus, D.M.

1984-04-05

The present invention is directed to an improved temperature responsive thermionic gas switch utilizing a hollow cathode and a folded emitter surface area. The folded emitter surface area of the thermionic switch substantially increases the on/off ratio by changing the conduction surface area involved in the two modes thereof. The improved switch of this invention provides an on/off ratio of 450:1 compared to the 10:1 ratio of the prior known thermionic switch, while providing for adjusting the on current. In the improved switch of this invention the conduction area is made small in the off mode, while in the on mode the conduction area is made large. This is achieved by utilizing a folded hollow cathode configuration and utilizing a folded emitter surface area, and by making the dimensions of the folds small enough so that a space charge will develop in the convolutions of the folds and suppress unignited current, thus limiting the current carrying surface in the off mode.

Interfacing a small thermophotovoltaic generator to the grid

NASA Astrophysics Data System (ADS)

Durisch, W.; Grob, B.; Mayor, J.-C.; Panitz, J.-C.; Rosselet, A.

1999-03-01

A prototype thermophotovoltaic generator and grid-interfacing device have been developed to demonstrate the feasibility of grid-connected operation. For this purpose a conventional butane burner (rated power 1.35 kWth) was equipped with a ceramic composite emitter made of rare earth oxides. A water layer between emitter and photocells was used to protect the photocells against overheating. It absorbs the nonconvertible emitter radiation and is heated up thereby. The hot water so produced in larger units of this type could be used in a primary recirculation loop to transfer heat to a secondary domestic hot water system. For the photovoltaic generator, commercial grade silicon solar cells with 16% efficiency (under standard test conditions) were used. With the radiation of the emitter, a current of 4.6 A at a maximum power point voltage of 3.3 V was produced, corresponding to a DC output of 15 W and a thermal to DC power conversion efficiency of 1.1%. A specially developed high efficiency DC/DC converter and a modified, commercially available inverter were used to feed the generated power to the local grid. Under the experimental conditions in question the DC/DC-converter and the grid-inverter had efficiencies of 98 and 91%, respectively resulting in an overall interface efficiency of 89%. From modeling of the measured electrical characteristics of the photo cell generator under solar and emitter radiation, it is concluded that the photo current was about three times higher under the filtered emitter radiation. Under these conditions the electrical losses of the photocells were significantly higher than under sunlight.

Graphene-on-GaN Hot Electron Transistor

NASA Astrophysics Data System (ADS)

Zubair, Ahmad; Nourbakhsh, Amirhasan; Hong, Jin-Yong; Song, Yi; Qi, Meng; Jena, Debdeep; Kong, Jing; Dresselhaus, Mildred S.; Palacios, Tomas

Hot electron transistors (HETs) are promising devices for potential high-frequency operation that currently CMOS cannot provide. In an HET, carrier transport is due to the injection of hot electrons from an emitter to a collector which is modulated by a base electrode. Therefore, ultra-thin base electrodes are needed to facilitate ultra-short transit time and high performance for THz operation range. In this regard, graphene, the thinnest conductive membrane in nature, is considered the best candidate for the base material in HETs. The existing HETs with SiO2/Si as emitter stack suffer from low current gain and output current density. In this work, we use the two-dimensional electron gas (2-DEG) in a GaN-based heterostructure as emitter and monolayer graphene as the base electrode. The transport study of the proof-of-concept device shows high output current density (>50 A/cm2) , current gain (>3) and ballistic injection efficiency of 75%. These results indicate that performance parameters can be further improved by engineering the band offset of the graphene/collector stack and improved interface between graphene and GaN. Army Research Office (ARO) (Grant Nos. W911NF-14-2-0071, 6930265, and 6930861).

Fabrication and characterization of active nanostructures

NASA Astrophysics Data System (ADS)

Opondo, Noah F.

Three different nanostructure active devices have been designed, fabricated and characterized. Junctionless transistors based on highly-doped silicon nanowires fabricated using a bottom-up fabrication approach are first discussed. The fabrication avoids the ion implantation step since silicon nanowires are doped in-situ during growth. Germanium junctionless transistors fabricated with a top down approach starting from a germanium on insulator substrate and using a gate stack of high-k dielectrics and GeO2 are also presented. The levels and origin of low-frequency noise in junctionless transistor devices fabricated from silicon nanowires and also from GeOI devices are reported. Low-frequency noise is an indicator of the quality of the material, hence its characterization can reveal the quality and perhaps reliability of fabricated transistors. A novel method based on low-frequency noise measurement to envisage trap density in the semiconductor bandgap near the semiconductor/oxide interface of nanoscale silicon junctionless transistors (JLTs) is presented. Low-frequency noise characterization of JLTs biased in saturation is conducted at different gate biases. The noise spectrum indicates either a Lorentzian or 1/f. A simple analysis of the low-frequency noise data leads to the density of traps and their energy within the semiconductor bandgap. The level of noise in silicon JLT devices is lower than reported values on transistors fabricated using a top-down approach. This noise level can be significantly improved by improving the quality of dielectric and the channel interface. A micro-vacuum electron device based on silicon field emitters for cold cathode emission is also presented. The presented work utilizes vertical Si nanowires fabricated by means of self-assembly, standard lithography and etching techniques as field emitters in this dissertation. To obtain a high nanowire density, hence a high current density, a simple and inexpensive Langmuir Blodgett technique to deposit silica nanoparticles as a mask to etch Si is adopted. Fabrication and characterization of a metal-gated microtriode with a high current density and low operating voltage are presented.

Simulation of electron beam formation and transport in a gas-filled electron-optical system with a plasma emitter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grishkov, A. A.; Kornilov, S. Yu., E-mail: kornilovsy@gmail.com; Rempe, N. G.

2016-07-15

The results of computer simulations of the electron-optical system of an electron gun with a plasma emitter are presented. The simulations are performed using the KOBRA3-INP, XOOPIC, and ANSYS codes. The results describe the electron beam formation and transport. The electron trajectories are analyzed. The mechanisms of gas influence on the energy inhomogeneity of the beam and its current in the regions of beam primary formation, acceleration, and transport are described. Recommendations for optimizing the electron-optical system with a plasma emitter are presented.

Modulation characteristics of graphene-based thermal emitters

NASA Astrophysics Data System (ADS)

Mahlmeister, Nathan Howard; Lawton, Lorreta Maria; Luxmoore, Isaac John; Nash, Geoffrey Richard

2016-01-01

We have investigated the modulation characteristics of the emission from a graphene-based thermal emitter both experimentally and through simulations using finite element method modelling. Measurements were performed on devices containing square multilayer graphene emitting areas, with the devices driven by a pulsed DC drive current over a range of frequencies. Simulations show that the dominant heat path is from the emitter to the underlying substrate, and that the thermal resistance between the graphene and the substrate determines the modulation characteristics. This is confirmed by measurements made on devices in which the emitting area is encapsulated by hexagonal boron nitride.

Microelectrode for energy and current control of nanotip field electron emitters

NASA Astrophysics Data System (ADS)

Lüneburg, S.; Müller, M.; Paarmann, A.; Ernstorfer, R.

2013-11-01

Emerging experiments and applications in electron microscopy, holography, and diffraction benefit from miniaturized electron guns for compact experimental setups. We present a highly compact microelectrode integrated field emitter that consists of a tungsten nanotip coated with a few micrometers thick polyimide film followed by a several nanometers thick gold film, both positioned behind the exposed emitter apex by approximately 10-30 μm. The control of the electric field strength at the nanometer scale tip apex allows suppression, extraction, and energy tuning of field-emitted electrons. The performance of the microelectrode is demonstrated experimentally and supported by numerical simulations.

All-optical control and super-resolution imaging of quantum emitters in layered materials.

PubMed

Kianinia, Mehran; Bradac, Carlo; Sontheimer, Bernd; Wang, Fan; Tran, Toan Trong; Nguyen, Minh; Kim, Sejeong; Xu, Zai-Quan; Jin, Dayong; Schell, Andreas W; Lobo, Charlene J; Aharonovich, Igor; Toth, Milos

2018-02-28

Layered van der Waals materials are emerging as compelling two-dimensional platforms for nanophotonics, polaritonics, valleytronics and spintronics, and have the potential to transform applications in sensing, imaging and quantum information processing. Among these, hexagonal boron nitride (hBN) is known to host ultra-bright, room-temperature quantum emitters, whose nature is yet to be fully understood. Here we present a set of measurements that give unique insight into the photophysical properties and level structure of hBN quantum emitters. Specifically, we report the existence of a class of hBN quantum emitters with a fast-decaying intermediate and a long-lived metastable state accessible from the first excited electronic state. Furthermore, by means of a two-laser repumping scheme, we show an enhanced photoluminescence and emission intensity, which can be utilized to realize a new modality of far-field super-resolution imaging. Our findings expand current understanding of quantum emitters in hBN and show new potential ways of harnessing their nonlinear optical properties in sub-diffraction nanoscopy.

Brightness-enhanced high-efficiency single emitters for fiber laser pumping

NASA Astrophysics Data System (ADS)

Yanson, Dan; Rappaport, Noam; Shamay, Moshe; Cohen, Shalom; Berk, Yuri; Klumel, Genadi; Don, Yaroslav; Peleg, Ophir; Levy, Moshe

2013-02-01

Reliable single emitters delivering <10W in the 9xx nm spectral range, are common energy sources for fiber laser pumps. The brightness (radiance) of a single emitter, which connotes the angular concentration of the emitted energy, is just as important a parameter as the output power alone for fiber coupling applications. We report on the development of high-brightness single emitters that demonstrate <12W output with 60% wall-plug efficiency and a lateral emission angle that is compatible with coupling into 0.15 NA delivery fiber. Using a purpose developed active laser model, simulation of far-field patterns in the lateral (slow) axis can be performed for different epitaxial wafer structures. By optimizing both the wafer and chip designs, we have both increased the device efficiency and improved the slow-axis divergence in high-current operation. Device reliability data are presented. The next-generation emitters will be integrated in SCD's NEON fiber pump modules to upgrade the pump output towards higher ex-fiber powers with high efficiency.

Development of an ultra-high temperature infrared scene projector at Santa Barbara Infrared Inc.

NASA Astrophysics Data System (ADS)

Franks, Greg; Laveigne, Joe; Danielson, Tom; McHugh, Steve; Lannon, John; Goodwin, Scott

2015-05-01

The rapid development of very-large format infrared detector arrays has challenged the IR scene projector community to develop correspondingly larger-format infrared emitter arrays to support the testing needs of systems incorporating these detectors. As with most integrated circuits, fabrication yields for the read-in integrated circuit (RIIC) that drives the emitter pixel array are expected to drop dramatically with increasing size, making monolithic RIICs larger than the current 1024x1024 format impractical and unaffordable. Additionally, many scene projector users require much higher simulated temperatures than current technology can generate to fully evaluate the performance of their systems and associated processing algorithms. Under the Ultra High Temperature (UHT) development program, Santa Barbara Infrared Inc. (SBIR) is developing a new infrared scene projector architecture capable of producing both very large format (>1024x1024) resistive emitter arrays and improved emitter pixel technology capable of simulating very high apparent temperatures. During an earlier phase of the program, SBIR demonstrated materials with MWIR apparent temperatures in excess of 1000K. New emitter materials have subsequently been selected to produce pixels that achieve even higher apparent temperatures. Test results from pixels fabricated using the new material set will be presented and discussed. Also in development under the same UHT program is a 'scalable' RIIC that will be used to drive the high temperature pixels. This RIIC will utilize through-silicon vias (TSVs) and quilt packaging (QP) technologies to allow seamless tiling of multiple chips to fabricate very large arrays, and thus overcome the inherent yield limitations of very-large-scale integrated circuits. Current status of the RIIC development effort will also be presented.

Current-voltage characteristics of carbon nanostructured field emitters in different power supply modes

NASA Astrophysics Data System (ADS)

Popov, E. O.; Kolosko, A. G.; Filippov, S. V.; Romanov, P. A.; Terukov, E. I.; Shchegolkov, A. V.; Tkachev, A. G.

2017-12-01

We received and compared the current-voltage characteristics of large-area field emitters based on nanocomposites with graphene and nanotubes. The characteristics were measured in two high voltage scanning modes: the "slow" and the "fast". Correlation between two types of hysteresis observed in these regimes was determined. Conditions for transition from "reverse" hysteresis to the "direct" one were experimentally defined. Analysis of the eight-shaped hysteresis was provided with calculation of the effective emission parameters. The phenomenological model of adsorption-desorption processes in the field emission system was proposed.

Effect of quantum well position on the distortion characteristics of transistor laser

NASA Astrophysics Data System (ADS)

Piramasubramanian, S.; Ganesh Madhan, M.; Radha, V.; Shajithaparveen, S. M. S.; Nivetha, G.

2018-05-01

The effect of quantum well position on the modulation and distortion characteristics of a 1300 nm transistor laser is analyzed in this paper. Standard three level rate equations are numerically solved to study this characteristics. Modulation depth, second order harmonic and third order intermodulation distortion of the transistor laser are evaluated for different quantum well positions for a 900 MHz RF signal modulation. From the DC analysis, it is observed that optical power is maximum, when the quantum well is positioned near base-emitter interface. The threshold current of the device is found to increase with increasing the distance between the quantum well and the base-emitter junction. A maximum modulation depth of 0.81 is predicted, when the quantum well is placed at 10 nm from the base-emitter junction, under RF modulation. The magnitude of harmonic and intermodulation distortion are found to decrease with increasing current and with an increase in quantum well distance from the emitter base junction. A minimum second harmonic distortion magnitude of -25.96 dBc is predicted for quantum well position (230 nm) near to the base-collector interface for 900 MHz modulation frequency at a bias current of 20 Ibth. Similarly, a minimum third order intermodulation distortion of -38.2 dBc is obtained for the same position and similar biasing conditions.

Research and development toward a 4.5-1.5 Å linac coherent light source (LCLS) at SLAC

NASA Astrophysics Data System (ADS)

Tatchyn, R.; Arthur, J.; Baltay, M.; Bane, K.; Boyce, R.; Cornacchia, M.; Cremer, T.; Fisher, A.; Hahn, S.-J.; Hernandez, M.; Loew, G.; Miller, R.; Nelson, W. R.; Nuhn, H.-D.; Palmer, D.; Paterson, J.; Raubenheimer, T.; Weaver, J.; Wiedemann, H.; Winick, H.; Pellegrini, C.; Travish, G.; Scharlemann, E. T.; Caspi, S.; Fawley, W.; Halbach, K.; Kim, K.-J.; Schlueter, R.; Xie, M.; Meyerhofer, D.; Bonifacio, R.; De Salvo, L.

1996-02-01

In recent years significant studies have been initiated on the feasibility of utilizing a portion of the 3 km S-band accelerator at SLAC to drive a short wavelength (4.5-1.5 Å) Linac Coherent Light Source (LCLS), a Free-Electron Laser (FEL) operating in the Self-Amplified Spontaneous Emission (SASE) regime. Electron beam requirements for single-pass saturation in a minimal time include: 1) a peak current in the 7 kA range, 2) a relative energy spread of <0.05%, and 3) a transverse emittance, ɛ [rad-m], approximating the diffraction-limit condition ɛ = {λ}/{4π}, where λ[m] is the output wavelength. Requirements on the insertion device include field error levels of 0.02% for keeping the electron bunch centered on and in phase with the amplified photons, and a focusing beta of 8 m/rad for inhibiting the dilution of its transverse density. Although much progress has been made in developing individual components and beam-processing techniques necessary for LCLS operation down to ˜20 Å, a substantial amount of research and development is still required in a number of theoretical and experimental areas leading to the construction and operation of a 4.5-1.5 Å LCLS. In this paper we report on a research and development program underway and in planning at SLAC for addressing critical questions in these areas. These include the construction and operation of a linac test stand for developing laser-driven photocathode rf guns with normalized emittances approaching 1 mm-mrad; development of advanced beam compression, stability, and emittance control techniques at multi-GeV energies; the construction and operation of a FEL Amplifier Test Experiment (FATE) for theoretical and experimental studies of SASE at IR wavelengths; an undulator development program to investigate superconducting, hybrid/permanent magnet (hybrid/PM), and pulsed-Cu technologies; theoretical and computational studies of high-gain FEL physics and LCLS component designs; development of X-ray optics and instrumentation for extracting, modulating, and delivering photons to experimental users; and the study and development of scientific experiments made possible by the source properties of the LCLS.

New Materials and Device Designs for Organic Light-Emitting Diodes

NASA Astrophysics Data System (ADS)

O'Brien, Barry Patrick

Research and development of organic materials and devices for electronic applications has become an increasingly active area. Display and solid-state lighting are the most mature applications and, and products have been commercially available for several years as of this writing. Significant efforts also focus on materials for organic photovoltaic applications. Some of the newest work is in devices for medical, sensor and prosthetic applications. Worldwide energy demand is increasing as the population grows and the standard of living in developing countries improves. Some studies estimate as much as 20% of annual energy usage is consumed by lighting. Improvements are being made in lightweight, flexible, rugged panels that use organic light emitting diodes (OLEDs), which are particularly useful in developing regions with limited energy availability and harsh environments. Displays also benefit from more efficient materials as well as the lighter weight and ruggedness enabled by flexible substrates. Displays may require different emission characteristics compared with solid-state lighting. Some display technologies use a white OLED (WOLED) backlight with a color filter, but these are more complex and less efficient than displays that use separate emissive materials that produce the saturated colors needed to reproduce the entire color gamut. Saturated colors require narrow-band emitters. Full-color OLED displays up to and including television size are now commercially available from several suppliers, but research continues to develop more efficient and more stable materials. This research program investigates several topics relevant to solid-state lighting and display applications. One project is development of a device structure to optimize performance of a new stable Pt-based red emitter developed in Prof Jian Li's group. Another project investigates new Pt-based red, green and blue emitters for lighting applications and compares a red/blue structure with a red/green/blue structure to produce light with high color rendering index. Another part of this work describes the fabrication of a 14.7" diagonal full color active-matrix OLED display on plastic substrate. The backplanes were designed and fabricated in the ASU Flexible Display Center and required significant engineering to develop; a discussion of that process is also included.

A comparison of etched-geometry and overgrown silicon permeable base transistors by two-dimensional numerical simulations

NASA Astrophysics Data System (ADS)

Vojak, B. A.; Alley, G. D.

1983-08-01

Two-dimensional numerical simulations are used to compare etched geometry and overgrown Si permeable base transistors (PTBs), considering both the etched collector and etched emitter biasing conditions made possible by the asymmetry of the etched structure. In PTB devices, the two-dimensional nature of the depletion region near the Schottky contact base grating results in a smaller electron barrier and, therefore, a larger collector current in the etched than in the overgrown structure. The parasitic feedback effects which result at high base-to-emitter bias levels lead to a deviation from the square-law behavior found in the collector characteristics of the overgrown PBT. These structures also have lower device capacitances and smaller transconductances at high base-to-emitter voltages. As a result, overgrown and etched structures have comparable predicted maximum values of the small signal unity short-circuit current gain frequency and maximum oscillation frequency.

Performance evaluation of PEP

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zisman, M.S.

An investigation of collective effects has been undertaken to assess the possibilities for using the low emittance operating mode of the PEP storage ring as a dedicated source of synchrotron radiation. Beam current limitations associated with longitudinal and transverse instabilities, and the expected emittance growth due to intrabeam scattering have been studied as a function of beam energy. Calculations of the beam lifetime due to Touschek and gas scattering are presented, and the growth times of coupled-bunch instabilities are estimated. In general, the results are encouraging, and no fundamental problems have been uncovered. It appears that beam currents up tomore » about 10 mA per bunch should be achievable, and that the emittance growth is not a severe problem at an energy of about 8 GeV. A feedback system to deal with coupled-bunch instabilities is likely to be required. 7 refs., 13 figs.« less

Crystalline silicon solar cells with high resistivity emitter

NASA Astrophysics Data System (ADS)

Panek, P.; Drabczyk, K.; Zięba, P.

2009-06-01

The paper presents a part of research targeted at the modification of crystalline silicon solar cell production using screen-printing technology. The proposed process is based on diffusion from POCl3 resulting in emitter with a sheet resistance on the level of 70 Ω/□ and then, shaped by high temperature passivation treatment. The study was focused on a shallow emitter of high resistivity and on its influence on output electrical parameters of a solar cell. Secondary ion mass spectrometry (SIMS) has been employed for appropriate distinguishing the total donor doped profile. The solar cell parameters were characterized by current-voltage characteristics and spectral response (SR) methods. Some aspects playing a role in suitable manufacturing process were discussed. The situation in a photovoltaic industry with emphasis on silicon supply and current prices of solar cells, modules and photovoltaic (PV) systems are described. The economic and quantitative estimation of the PV world market is shortly discussed.

VO2-based radiative thermal transistor with a semi-transparent base

NASA Astrophysics Data System (ADS)

Prod'homme, Hugo; Ordonez-Miranda, Jose; Ezzahri, Younès; Drévillon, Jérémie; Joulain, Karl

2018-05-01

We study a radiative thermal transistor analogous to an electronic one made of a VO2 base placed between two silica semi-infinite plates playing the roles of the transistor collector and emitter. The fact that VO2 exhibits an insulator to metal transition is exploited to modulate and/or amplify heat fluxes between the emitter and the collector, by applying a thermal current on the VO2 base. We extend the work of precedent studies considering the case where the base can be semi-transparent so that heat can be exchanged directly between the collector and the emitter. Both near and far field cases are considered leading to 4 typical regimes resulting from the fact that the emitter-base and base-collector separation distances can be larger or smaller than the thermal wavelength for a VO2 layer opaque or semi-transparent. Thermal currents variations with the base temperatures are calculated and analyzed. It is found that the transistor can operate in an amplification mode as already stated in [1] or in a switching mode as seen in [2]. An optimum configuration for the base thickness and separation distance maximizing the thermal transistor modulation factor is found.

Decoupling Intensity Radiated by the Emitter in Distance Estimation from Camera to IR Emitter

PubMed Central

Cano-García, Angel E.; Galilea, José Luis Lázaro; Fernández, Pedro; Infante, Arturo Luis; Pompa-Chacón, Yamilet; Vázquez, Carlos Andrés Luna

2013-01-01

Various models using radiometric approach have been proposed to solve the problem of estimating the distance between a camera and an infrared emitter diode (IRED). They depend directly on the radiant intensity of the emitter, set by the IRED bias current. As is known, this current presents a drift with temperature, which will be transferred to the distance estimation method. This paper proposes an alternative approach to remove temperature drift in the distance estimation method by eliminating the dependence on radiant intensity. The main aim was to use the relative accumulated energy together with other defined models, such as the zeroth-frequency component of the FFT of the IRED image and the standard deviation of pixel gray level intensities in the region of interest containing the IRED image. By using the abovementioned models, an expression free of IRED radiant intensity was obtained. Furthermore, the final model permitted simultaneous estimation of the distance between the IRED and the camera and the IRED orientation angle. The alternative presented in this paper gave a 3% maximum relative error over a range of distances up to 3 m. PMID:23727954

RF emittance in a low energy electron linear accelerator

NASA Astrophysics Data System (ADS)

Sanaye Hajari, Sh.; Haghtalab, S.; Shaker, H.; Kelisani, M. Dayyani

2018-04-01

Transverse beam dynamics of an 8 MeV low current (10 mA) S-band traveling wave electron linear accelerator has been studied and optimized. The main issue is to limit the beam emittance, mainly induced by the transverse RF forces. The linac is being constructed at Institute for Research in Fundamental Science (IPM), Tehran Iran Labeled as Iran's First Linac, nearly all components of this accelerator are designed and constructed within the country. This paper discusses the RF coupler induced field asymmetry and the corresponding emittance at different focusing levels, introduces a detailed beam dynamics design of a solenoid focusing channel aiming to reduce the emittance growth and studies the solenoid misalignment tolerances. In addition it has been demonstrated that a prebuncher cavity with appropriate parameters can help improving the beam quality in the transverse plane.

Characterization of Hollow Cathode Performance and Thermal Behavior

NASA Technical Reports Server (NTRS)

Polk, James E.; Goebel, Dan M.; Watkins, Ron; Jameson, Kristina; Yoneshige, Lance; Przybylowski, JoHanna; Cho, Lauren

2006-01-01

Hollow cathodes are one of the main life-limiting components in ion engines and Hall thrusters. Although state-of-the-art hollow cathodes have demonstrated up to 30,352 hours of operation in ground tests with careful handling, future missions are likely to require longer life, more margin and greater resistance to reactive contaminant gases. Three alternate hollow cathode technologies that exploit different emitter materials or geometries to address some of the limitations of state-of-the-art cathodes are being investigated. Performance measurements of impregnated tungsten-iridium dispenser cathodes at discharge currents of 4 to 15 A demonstrated that they have the same operating range and ion production efficiency as conventional tungsten dispenser cathodes. Temperature measurements indicated that tungsten-iridium cathodes also operate at the same emitter temperatures. They did not exhibit the expected reduction in work function at the current densities tested. Hollow cathodes with lanthanum hexaboride emitters operated over a wide current range, but suffered from lower ion production efficiency at currents below about 12.4 A because of higher insert heating requirements. Differences in operating voltages and ion production rates are explained with a simple model of the effect of cathode parameters on discharge behavior.

Development of a pepper pot emittance probe and its application for ECR ion beam studies.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kondrashev, S.; Barcikowski, A.; Mustapha, B.

2009-07-21

A pepper pot-scintillator screen system has been developed and used to measure the emittance of DC ion beams extracted from a high-intensity permanent magnet ECR ion source. The system includes a fast beam shutter with a minimum dwell time of 18 ms to reduce the degradation of the CsI(Tl) scintillator by DC ion beam irradiation and a CCD camera with a variable shutter speed in the range of 1 {micro}s-65 s. On-line emittance measurements are performed by an application code developed on a LabVIEW platform. The sensitivity of the device is sufficient to measure the emittance of DC ion beamsmore » with current densities down to about 100 nA/cm{sup 2}. The emittance of all ion species extracted from the ECR ion source and post-accelerated to an energy of 75-90 keV/charge have been measured downstream of the LEBT. As the mass-to-charge ratio of ion species increases, the normalized RMS emittances in both transverse phase planes decrease from 0.5-1.0 {pi} mm mrad for light ions to 0.05-0.09 {pi} mm mrad for highly charged {sup 209}Bi ions. The dependence of the emittance on ion's mass-to-charge ratio follows very well the dependence expected from beam rotation induced by decreasing ECR axial magnetic field. The measured emittance values cannot be explained by only ion beam rotation for all ion species and the contribution to emittance of ion temperature in plasma, non-linear electric fields and non-linear space charge is comparable or even higher than the contribution of ion beam rotation.« less

Microelectrode for energy and current control of nanotip field electron emitters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lüneburg, S.; Müller, M., E-mail: m.mueller@fhi-berlin.mpg.de; Paarmann, A., E-mail: alexander.paarmann@fhi-berlin.mpg.de

2013-11-18

Emerging experiments and applications in electron microscopy, holography, and diffraction benefit from miniaturized electron guns for compact experimental setups. We present a highly compact microelectrode integrated field emitter that consists of a tungsten nanotip coated with a few micrometers thick polyimide film followed by a several nanometers thick gold film, both positioned behind the exposed emitter apex by approximately 10–30 μm. The control of the electric field strength at the nanometer scale tip apex allows suppression, extraction, and energy tuning of field-emitted electrons. The performance of the microelectrode is demonstrated experimentally and supported by numerical simulations.

Rematching AGS Booster synchrotron injection lattice for smaller transverse beam emittances

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, C.; Beebe-Wang, J.; Brown, K.

2017-01-25

The polarized proton beam is injected into the booster via the charge-exchange (H- to H+) scheme. The emittance growth due to scattering at the stripping foil is proportional to the beta functions at the foil. It was demonstrated that the current scheme of reducing the beta functions at the stripping foil preserves the emittance better; however the betatron tunes are above but very close to half integer. Due to concern of space charge and half integer in general, options of lattice designs aimed towards reducing the beta functions at the stripping foil with tunes at more favorable places are explored.

High-brightness 800nm fiber-coupled laser diodes

NASA Astrophysics Data System (ADS)

Berk, Yuri; Levy, Moshe; Rappaport, Noam; Tessler, Renana; Peleg, Ophir; Shamay, Moshe; Yanson, Dan; Klumel, Genadi; Dahan, Nir; Baskin, Ilya; Shkedi, Lior

2014-03-01

Fiber-coupled laser diodes have become essential sources for fiber laser pumping and direct energy applications. Single emitters offer reliable multi-watt output power from a 100 m lateral emission aperture. By their combination and fiber coupling, pump powers up to 100 W can be achieved from a low-NA fiber pigtail. Whilst in the 9xx nm spectral range the single emitter technology is very mature with <10W output per chip, at 800nm the reliable output power from a single emitter is limited to 4 W - 5 W. Consequently, commercially available fiber coupled modules only deliver 5W - 15W at around 800nm, almost an order of magnitude down from the 9xx range pumps. To bridge this gap, we report our advancement in the brightness and reliability of 800nm single emitters. By optimizing the wafer structure, laser cavity and facet passivation process we have demonstrated QCW device operation up to 19W limited by catastrophic optical damage to the 100 μm aperture. In CW operation, the devices reach 14 W output followed by a reversible thermal rollover and a complete device shutdown at high currents, with the performance fully rebounded after cooling. We also report the beam properties of our 800nm single emitters and provide a comparative analysis with the 9xx nm single emitter family. Pump modules integrating several of these emitters with a 105 μm / 0.15 NA delivery fiber reach 35W in CW at 808 nm. We discuss the key opto-mechanical parameters that will enable further brightness scaling of multi-emitter pump modules.

Development of the 2-MV Injector for HIF

NASA Astrophysics Data System (ADS)

Bieniosek, F. M.; Kwan, J. W.; Henestroza, E.; Kim, C.

2001-05-01

The 2-MV Injector consists of a 17-cm-diameter surface ionization source, an extraction diode, and an electrostatic quadrupole (ESQ) accelerator, with maximum current of 0.8 A of potassium beam at 2 MeV. Previous performance of the Injector produced a beam with adequate current and emittance but with a hollow profile at the end of the ESQ section. We have examined the profile of the beam as it leaves the diode. The measured nonuniform beam density distribution qualitatively agrees with EGUN simulation. Implications for emittance growth in the post acceleration and transport phase will be investigated.

Emittance and lifetime measurement with damping wigglers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, G. M.; Shaftan, T., E-mail: shaftan@bnl.gov; Cheng, W. X.

National Synchrotron Light Source II (NSLS-II) is a new third-generation storage ring light source at Brookhaven National Laboratory. The storage ring design calls for small horizontal emittance (<1 nm-rad) and diffraction-limited vertical emittance at 12 keV (8 pm-rad). Achieving low value of the beam size will enable novel user experiments with nm-range spatial and meV-energy resolution. The high-brightness NSLS-II lattice has been realized by implementing 30-cell double bend achromatic cells producing the horizontal emittance of 2 nm rad and then halving it further by using several Damping Wigglers (DWs). This paper is focused on characterization of the DW effects inmore » the storage ring performance, namely, on reduction of the beam emittance, and corresponding changes in the energy spread and beam lifetime. The relevant beam parameters have been measured by the X-ray pinhole camera, beam position monitors, beam filling pattern monitor, and current transformers. In this paper, we compare the measured results of the beam performance with analytic estimates for the complement of the 3 DWs installed at the NSLS-II.« less

Combustor design tool for a gas fired thermophotovoltaic energy converter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lindler, K.W.; Harper, M.J.

1995-12-31

Recently, there has been a renewed interest in thermophotovoltaic (TPV) energy conversion. A TPV device converts radiant energy from a high temperature incandescent emitter directly into electricity by photovoltaic cells. The current Department of Energy sponsored research involves the design, construction and demonstration of a prototype TPV converter that uses a hydrocarbon fuel (such as natural gas) as the energy source. As the photovoltaic cells are designed to efficiently convert radiant energy at a prescribed wavelength, it is important that the temperature of the emitter be nearly constant over its entire surface. The U. S. Naval Academy has been taskedmore » with the development of a small emitter (with a high emissivity) that can be maintained at 1756 K (2700 F). This paper describes the computer spreadsheet model that was developed as a tool to be used for the design of the high temperature emitter.« less

Life Model of Hollow Cathodes Using a Barium Calcium Aluminate Impregnated Tungsten Emitter

NASA Technical Reports Server (NTRS)

Kovaleski, S. D.; Burke, Tom (Technical Monitor)

2001-01-01

Hollow cathodes with barium calcium aluminate impregnated tungsten emitters for thermionic emission are widely used in electric propulsion. These high current, low power cathodes are employed in ion thrusters, Hall thrusters, and on the International Space Station in plasma contactors. The requirements on hollow cathode life are growing more stringent with the increasing use of electric propulsion technology. The life limiting mechanism that determines the entitlement lifetime of a barium impregnated thermionic emission cathode is the evolution and transport of barium away from the emitter surface. A model is being developed to study the process of barium transport and loss from the emitter insert in hollow cathodes. The model accounts for the production of barium through analysis of the relevant impregnate chemistry. Transport of barium through the approximately static gas is also being treated. Finally, the effect of temperature gradients within the cathode are considered.

Recent progress in nanostructured next-generation field emission devices

NASA Astrophysics Data System (ADS)

Mittal, Gaurav; Lahiri, Indranil

2014-08-01

Field emission has been known to mankind for more than a century, and extensive research in this field for the last 40-50 years has led to development of exciting applications such as electron sources, miniature x-ray devices, display materials, etc. In the last decade, large-area field emitters were projected as an important material to revolutionize healthcare and medical devices, and space research. With the advent of nanotechnology and advancements related to carbon nanotubes, field emitters are demonstrating highly enhanced performance and novel applications. Next-generation emitters need ultra-high emission current density, high brightness, excellent stability and reproducible performance. Novel design considerations and application of new materials can lead to achievement of these capabilities. This article presents an overview of recent developments in this field and their effects on improved performance of field emitters. These advancements are demonstrated to hold great potential for application in next-generation field emission devices.

Modeling of Diamond Field-Emitter-Arrays for high brightness photocathode applications

NASA Astrophysics Data System (ADS)

Kwan, Thomas; Huang, Chengkun; Piryatinski, Andrei; Lewellen, John; Nichols, Kimberly; Choi, Bo; Pavlenko, Vitaly; Shchegolkov, Dmitry; Nguyen, Dinh; Andrews, Heather; Simakov, Evgenya

2017-10-01

We propose to employ Diamond Field-Emitter-Arrays (DFEAs) as high-current-density ultra-low-emittance photocathodes for compact laser-driven dielectric accelerators capable of generating ultra-high brightness electron beams for advanced applications. We develop a semi-classical Monte-Carlo photoemission model for DFEAs that includes carriers' transport to the emitter surface and tunneling through the surface under external fields. The model accounts for the electronic structure size quantization affecting the transport and tunneling process within the sharp diamond tips. We compare this first principle model with other field emission models, such as the Child-Langmuir and Murphy-Good models. By further including effects of carrier photoexcitation, we perform simulations of the DFEAs' photoemission quantum yield and the emitted electron beam. Details of the theoretical model and validation against preliminary experimental data will be presented. Work ssupported by LDRD program at LANL.

Non-Uniform Cathode Emission Studies of a MIG Gun

NASA Astrophysics Data System (ADS)

Marchewka, C. D.; Shapiro, M. A.; Sirigiri, J. R.; Temkin, R. J.

2004-11-01

We present the initial results of the modeling of the effect of emission non-uniformity in 96 kV, 40 A Magnetron Injection Gun (MIG) of a 1.5 MW 110 GHz gyrotron using a 3D gun simulation code. The azimuthal emission nonuniformity can lead to increased mode competition and an overall decreased efficiency of the device [1]. The electron beam is modeled from the cathode to a downstream position where the velocity spread saturates using the AMAZE 3D suite of codes. After bench marking the results of the 3D code with 2D codes such as TRAK2D and EGUN, the emitter was modified to simulate asymmetric emission from the cathode to gain an understanding into the effects of inhomogeneous beam current density on the velocity spread and pitch factor of the electron beam. [1] G. S. Nusinovich, A.N. Vlasov, M. Botton, T. M. Antonsen, Jr., S. Cauffman, K. Felch, ``Effect of the azimuthal inhomogeneity of electron emission on gyrotron operation,'' Phys. Plasmas, vol. 8, no. 7, pp. 3473-3479, 2001

Overview of Lattice Design and Evaluation for the APS Upgrade

DOE PAGES

Borland, M.; Emery, L.; Lindberg, R.; ...

2017-08-01

The Advanced Photon Source (APS) is a 7-GeV synchrotron light source that has been in operation since 1996. Since that time, the effective emittance has been decreased from 8 nm to 3.1 nm, which is very competitive for a 3rd-generation light source. However, newer facilities such as PETRA-III, NSLS-II, and MAX-IV are pushing the emittance to significantly smaller values. MAX-IV in particular has set the current benchmark with an emittance of about 300 pm at 3 GeV. This was accomplished by use of a multi-bend achromat lattice, which takes advantage of the 1/M3 scaling of the emittance with respect tomore » the number of dipoles M. In order to ensure that our facility remains competitive, APS is pursuing a major upgrade, which involves replacement of the existing double-bend lattice with a seven-bend achromat lattice, promising a 40-fold reduction in emittance. This paper describes the process of developing and evaluating candidate lattice designs. Two candidate 6-GeV lattices are described: one providing a natural emittance of 67 pm and the other providing 41 pm. Our analysis includes single-particle dynamics as well as single- and multi-bunch collective effects.« less

Ratiometric electrochemiluminescent strategy regulated by electrocatalysis of palladium nanocluster for immunosensing.

PubMed

Huang, Yin; Lei, Jianping; Cheng, Yan; Ju, Huangxian

2016-03-15

This work designed a novel ratiometric electrochemiluminescence (ECL) immunosensing approach based on two different ECL emitters: CdS quantum dots (QDs) as cathodic emitter and luminol as anodic emitter. The ECL immunosensor was constructed by a layer-by-layer modification of CdS QDs, Au nanoparticles and capture antibody on a glassy carbon electrode. With hydrogen peroxide as ECL coreactant, the immunosensor showed a cathodic ECL emission of CdS QDs at -1.5 V (vs Ag/AgCl) in air-saturated pH 8.0 buffer. Upon the formation of sandwich immunoassay, the lumiol/palladium nanoclusters (Pd NCs)@graphene oxide probe was introduced to the electrode. Therefore, the cathodic ECL intensity decreased and luminol anodic ECL emission was appeared at +0.3 V (vs Ag/AgCl) owing to the competition of the coreactant of hydrogen peroxide. Using carcino-embryonic antigen as model, this ratiometric ECL strategy could be used for immunoassay with a linear range of 1.0-100 pg mL(-1) and a detection limit of 0.62 pg mL(-1). The enhanced ratiometric ECL signal resulted from the high density and excellent electrocatalysis of the loaded Pd NCs. The immunosensor exhibited good stability and acceptable fabrication reproducibility and accuracy, showing a great promising for clinical application. This electrocatalysis-regulated ratiometric ECL provides a new concept for ECL measurement, and could be conveniently extended for detection of other protein biomarkers. Copyright © 2015 Elsevier B.V. All rights reserved.

High-temperature, high-power-density thermionic energy conversion for space

NASA Technical Reports Server (NTRS)

Morris, J. F.

1977-01-01

Theoretic converter outputs and efficiencies indicate the need to consider thermionic energy conversion (TEC) with greater power densities and higher temperatures within reasonable limits for space missions. Converter-output power density, voltage, and efficiency as functions of current density were determined for 1400-to-2000 K emitters with 725-to-1000 K collectors. The results encourage utilization of TEC with hotter-than-1650 K emitters and greater-than-6W sq cm outputs to attain better efficiencies, greater voltages, and higher waste-heat-rejection temperatures for multihundred-kilowatt space-power applications. For example, 1800 K, 30 A sq cm TEC operation for NEP compared with the 1650 K, 5 A/sq cm case should allow much lower radiation weights, substantially fewer and/or smaller emitter heat pipes, significantly reduced reactor and shield-related weights, many fewer converters and associated current-collecting bus bars, less power conditioning, and lower transmission losses. Integration of these effects should yield considerably reduced NEP specific weights.

Transverse emittance-preserving arc compressor for high-brightness electron beam-based light sources and colliders

NASA Astrophysics Data System (ADS)

Di Mitri, S.; Cornacchia, M.

2015-03-01

Bunch length magnetic compression is used in high-brightness linacs driving free-electron lasers (FELs) and particle colliders to increase the peak current of the injected beam. To date, it is performed in dedicated insertions made of few degrees bending magnets and the compression factor is limited by the degradation of the beam transverse emittance owing to emission of coherent synchrotron radiation (CSR). We reformulate the known concept of CSR-driven optics balance for the general case of varying bunch length and demonstrate, through analytical and numerical results, that a 500 pC charge beam can be time-compressed in a periodic 180 deg arc at 2.4 GeV beam energy and lower, by a factor of up to 45, reaching peak currents of up to 2 kA and with a normalized emittance growth at the 0.1 μ \\text{m} rad level. The proposed solution offers new schemes of beam longitudinal gymnastics; an application to an energy recovery linac driving FEL is discussed.

Terahertz emission from ultrafast spin-charge current at a Rashba interface

NASA Astrophysics Data System (ADS)

Zhang, Qi; Jungfleisch, Matthias Benjamin; Zhang, Wei; Pearson, John E.; Wen, Haidan; Hoffmann, Axel

Ultrafast broadband terahertz (THz) radiation is highly desired in various fields from fundamental research in condensed matter physics to bio-chemical detection. Conventional ultrafast THz sources rely on either nonlinear optical effects or ultrafast charge currents in semiconductors. Recently, however, it was realized that ultrabroad-band THz radiation can be produced highly effectively by novel spintronics-based emitters that also make use of the electron's spin degree of freedom. Those THz-emitters convert a spin current flow into a terahertz electromagnetic pulse via the inverse spin-Hall effect. In contrast to this bulk conversion process, we demonstrate here that a femtosecond spin current pulse launched from a CoFeB layer can also generate terahertz transients efficiently at a two-dimensional Rashba interface between two non-magnetic materials, i.e., Ag/Bi. Those interfaces have been proven to be efficient means for spin- and charge current interconversion.

An integrated circuit switch

NASA Technical Reports Server (NTRS)

Bonin, E. L.

1969-01-01

Multi-chip integrated circuit switch consists of a GaAs photon-emitting diode in close proximity with S1 phototransistor. A high current gain is obtained when the transistor has a high forward common-emitter current gain.

LC-oscillator with automatic stabilized amplitude via bias current control. [power supply circuit for transducers

NASA Technical Reports Server (NTRS)

Hamlet, J. F. (Inventor)

1974-01-01

A stable excitation supply for measurement transducers is described. It consists of a single-transistor oscillator with a coil connected to the collector and a capacitor connected from the collector to the emitter. The output of the oscillator is rectified and the rectified signal acts as one input to a differential amplifier; the other input being a reference potential. The output of the amplifier is connected at a point between the emitter of the transistor and ground. When the rectified signal is greater than the reference signal, the differential amplifier produces a signal of polarity to reduce bias current and, consequently, amplification.

A transistor based on 2D material and silicon junction

NASA Astrophysics Data System (ADS)

Kim, Sanghoek; Lee, Seunghyun

2017-07-01

A new type of graphene-silicon junction transistor based on bipolar charge-carrier injection was designed and investigated. In contrast to many recent studies on graphene field-effect transistor (FET), this device is a new type of bipolar junction transistor (BJT). The transistor fully utilizes the Fermi level tunability of graphene under bias to increase the minority-carrier injection efficiency of the base-emitter junction in the BJT. Single-layer graphene was used to form the emitter and the collector, and a p-type silicon was used as the base. The output of this transistor was compared with a metal-silicon junction transistor ( i.e. surface-barrier transistor) to understand the difference between a graphene-silicon junction and metal-silicon Schottky junction. A significantly higher current gain was observed in the graphene-silicon junction transistor as the base current was increased. The graphene-semiconductor heterojunction transistor offers several unique advantages, such as an extremely thin device profile, a low-temperature (< 110 °C) fabrication process, low cost (no furnace process), and high-temperature tolerance due to graphene's stability. A transistor current gain ( β) of 33.7 and a common-emitter amplifier voltage gain of 24.9 were achieved.

Acoustoelectric current saturation in c-axis fiber-textured polycrystalline zinc oxide films

NASA Astrophysics Data System (ADS)

Pompe, T.; Srikant, V.; Clarke, D. R.

1996-12-01

Acoustoelectric current saturation, which until now has only been observed in piezoelectric single crystals, is observed in thin polycrystalline zinc oxide films. Epitaxial ZnO films on c-plane sapphire and textured ZnO polycrystalline films on fused silica both exhibit current saturation phenomenon. The values of the saturation current densities are in the range 105-106 A/cm2, depending on the carrier concentration in the film, with corresponding saturation electric fields of 3-5×103 V/cm. In addition to the current saturation, the electrical properties of the films degraded with the onset of the acoustoelectric effect but could be restored by annealing at 250 °C in a vacuum for 30 min.

Compact Rare Earth Emitter Hollow Cathode

NASA Technical Reports Server (NTRS)

Watkins, Ronald; Goebel, Dan; Hofer, Richard

2010-01-01

A compact, high-current, hollow cathode utilizing a lanthanum hexaboride (LaB6) thermionic electron emitter has been developed for use with high-power Hall thrusters and ion thrusters. LaB6 cathodes are being investigated due to their long life, high current capabilities, and less stringent xenon purity and handling requirements compared to conventional barium oxide (BaO) dispenser cathodes. The new cathode features a much smaller diameter than previously developed versions that permit it to be mounted on axis of a Hall thruster ( internally mounted ), as opposed to the conventional side-mount position external to the outer magnetic circuit ("externally mounted"). The cathode has also been reconfigured to be capable of surviving vibrational loads during launch and is designed to solve the significant heater and materials compatibility problems associated with the use of this emitter material. This has been accomplished in a compact design with the capability of high-emission current (10 to 60 A). The compact, high-current design has a keeper diameter that allows the cathode to be mounted on the centerline of a 6- kW Hall thruster, inside the iron core of the inner electromagnetic coil. Although designed for electric propulsion thrusters in spacecraft station- keeping, orbit transfer, and interplanetary applications, the LaB6 cathodes are applicable to the plasma processing industry in applications such as optical coatings and semiconductor processing where reactive gases are used. Where current electrical propulsion thrusters with BaO emitters have limited life and need extremely clean propellant feed systems at a significant cost, these LaB6 cathodes can run on the crudest-grade xenon propellant available without impact. Moreover, in a laboratory environment, LaB6 cathodes reduce testing costs because they do not require extended conditioning periods under hard vacuum. Alternative rare earth emitters, such as cerium hexaboride (CeB6) can be used in this configuration with possibly an even longer emitter life. This cathode is specifically designed to integrate on the centerline of a high-power Hall thruster, thus eliminating the asymmetries in the plasma discharge common to cathodes previously mounted externally to the thruster s magnetic circuit. An alternative configuration for the cathode uses an external propellant feed. This diverts a fraction of the total cathode flow to an external feed, which can improve the cathode coupling efficiency at lower total mass flow rates. This can improve the overall thruster efficiency, thereby decreasing the required propellant loads for different missions. Depending on the particular mission, reductions in propellant loads can lead to mission enabling capabilities by allowing launch vehicle step-down, greater payload capability, or by extending the life of a spacecraft.

Carbon nanotube emitters and field emission triode

NASA Astrophysics Data System (ADS)

Fan, Zhiqin; Zhang, Binglin; Yao, Ning; Zhang, Lan; Ma, Huizhong; Deng, Jicai

2006-05-01

Based on our study on field emission from multi-walled carbon nanotubes (MWNTs), we experimentally manufactured field emission display (FED) triode with a MWNTs cold cathode, and demonstrated an excellent performance of MWNTs as field emitters. The measured luminance of the phosphor screens was 1.8*10^(3) cd/m2 for green light. The emission is stable with a fluctuation of only 1.5% at an average current of 260 'mu'A.

Flat panel ferroelectric electron emission display system

DOEpatents

Sampayan, Stephen E.; Orvis, William J.; Caporaso, George J.; Wieskamp, Ted F.

1996-01-01

A device which can produce a bright, raster scanned or non-raster scanned image from a flat panel. Unlike many flat panel technologies, this device does not require ambient light or auxiliary illumination for viewing the image. Rather, this device relies on electrons emitted from a ferroelectric emitter impinging on a phosphor. This device takes advantage of a new electron emitter technology which emits electrons with significant kinetic energy and beam current density.

Arrays of Bundles of Carbon Nanotubes as Field Emitters

NASA Technical Reports Server (NTRS)

Manohara, Harish; Bronkowski, Michael

2007-01-01

Experiments have shown that with suitable choices of critical dimensions, planar arrays of bundles of carbon nanotubes (see figure) can serve as high-current-density field emitter (cold-cathode) electron sources. Whereas some hot-cathode electron sources must be operated at supply potentials of thousands of volts, these cold-cathode sources generate comparable current densities when operated at tens of volts. Consequently, arrays of bundles of carbon nanotubes might prove useful as cold-cathode sources in miniature, lightweight electron-beam devices (e.g., nanoklystrons) soon to be developed. Prior to the experiments, all reported efforts to develop carbon-nanotube-based field-emission sources had yielded low current densities from a few hundred microamperes to a few hundred milliamperes per square centimeter. An electrostatic screening effect, in which taller nanotubes screen the shorter ones from participating in field emission, was conjectured to be what restricts the emission of electrons to such low levels. It was further conjectured that the screening effect could be reduced and thus emission levels increased by increasing the spacing between nanotubes to at least by a factor of one to two times the height of the nanotubes. While this change might increase the emission from individual nanotubes, it would decrease the number of nanotubes per unit area and thereby reduce the total possible emission current. Therefore, to maximize the area-averaged current density, it would be necessary to find an optimum combination of nanotube spacing and nanotube height. The present concept of using an array of bundles of nanotubes arises partly from the concept of optimizing the spacing and height of field emitters. It also arises partly from the idea that single nanotubes may have short lifetimes as field emitters, whereas bundles of nanotubes could afford redundancy so that the loss of a single nanotube would not significantly reduce the overall field emission.

Field ion microscopic studies of the CO oxidation on platinum: Bistability and oscillations

NASA Astrophysics Data System (ADS)

Gorodetskii, V.; Drachsel, W.; Ehsasi, M.; Block, J. H.

1994-05-01

The oscillating CO oxidation is investigated on a Pt-field emitter tip by using the field ion mode of surface imaging of Oad sites with O2 as imaging gas. Based on data of the titration reactions [V. Gorodetskii, W. Drachsel, and J. H. Block, J. Chem. Phys. 100, C. E. UPDATE (1994)], external control parameters for the regions of bistability and of self-sustained isothermal oscillations could be found. On a field emitter tip, oscillations can be generated in a rather large parameter space. The anticlockwise hysteresis of O+2 ion currents in temperature cycles occurs in agreement with results on single crystal planes. Unexpected regular oscillation sequences could occasionally be obtained on the small surface areas of a field emitter tip and measured as function of the CO partial pressure and of the temperature. Different stages within oscillating cycles were documented by field ion images. Oscillations of total ion currents are correlated with variations in the spatial brightness of field ion images. In the manifold of single crystal planes of a field emitter {331} planes around the {011} regions are starting points for oscillations which mainly proceed along [100] vicinals. This excludes the {111} regions from autonomous oscillations. With slightly increased CO partial pressures fast local oscillations at a few hundred surface sites of the Pt(001) plane display short-living CO islands of 40 to 50 Å diameter. Temporal oscillations of the total O+2 ion current are mainly caused by surface plane specific spatial oscillations. The synchronization is achieved by diffusion reaction fronts rather than by gas phase synchronization.

Additively manufactured MEMS multiplexed coaxial electrospray sources for high-throughput, uniform generation of core-shell microparticles.

PubMed

Olvera-Trejo, D; Velásquez-García, L F

2016-10-18

This study reports the first MEMS multiplexed coaxial electrospray sources in the literature. Coaxial electrospraying is a microencapsulation technology based on electrohydrodynamic jetting of two immiscible liquids, which allows precise control with low size variation of the geometry of the core-shell particles it generates, which is of great importance in numerous biomedical and engineering applications, e.g., drug delivery and self-healing composites. By implementing monolithic planar arrays of miniaturized coaxial electrospray emitters that work uniformly in parallel, the throughput of the compound microdroplet source is greatly increased, making the microencapsulation technology compatible with low-cost commercial applications. Miniaturized core-shell particle generators with up to 25 coaxial electrospray emitters (25 emitters cm -2 ) were fabricated via stereolithography, which is an additive manufacturing process that can create complex microfluidic devices at a small fraction of the cost per device and fabrication time associated with silicon-based counterparts. The characterization of devices with the same emitter structure but different array sizes demonstrates uniform array operation. Moreover, the data demonstrate that the per-emitter current is approximately proportional to the square root of the flow rate of the driving liquid, and it is independent of the flow rate of the driven liquid, as predicted by the theory. The core/shell diameters and the size distribution of the generated compound microparticles can be modulated by controlling the flow rates fed to the emitters.

Variable Emittance Electrochromics Using Ionic Electrolytes and Low Solar Absorptance Coatings

NASA Technical Reports Server (NTRS)

Chandrasekhar, Prasanna

2011-01-01

One of the last remaining technical hurdles with variable emittance devices or skins based on conducting polymer electrochromics is the high solar absorptance of their top surfaces. This high solar absorptance causes overheating of the skin when facing the Sun in space. Existing technologies such as mechanical louvers or loop heat pipes are virtually inapplicable to micro (< 20 kg) and nano (< 5 kg) spacecraft. Novel coatings lower the solar absorption to Alpha(s) of between 0.30 and 0.46. Coupled with the emittance properties of the variable emittance skins, this lowers the surface temperature of the skins facing the Sun to between 30 and 60 C, which is much lower than previous results of 100 C, and is well within acceptable satellite operations ranges. The performance of this technology is better than that of current new technologies such as microelectromechanical systems (MEMS), electrostatics, and electrophoretics, especially in applications involving micro and nano spacecraft. The coatings are deposited inside a high vacuum, layering multiple coatings onto the top surfaces of variable emittance skins. They are completely transparent in the entire relevant infrared region (about 2 to 45 microns), but highly reflective in the visible-NIR (near infrared) region of relevance to solar absorptance.

Pyrimidine-based twisted donor-acceptor delayed fluorescence molecules: a new universal platform for highly efficient blue electroluminescence.

PubMed

Park, In Seob; Komiyama, Hideaki; Yasuda, Takuma

2017-02-01

Deep-blue emitters that can harvest both singlet and triplet excited states to give high electron-to-photon conversion efficiencies are highly desired for applications in full-color displays and white lighting devices based on organic light-emitting diodes (OLEDs). Thermally activated delayed fluorescence (TADF) molecules based on highly twisted donor-acceptor (D-A) configurations are promising emitting dopants for the construction of efficient deep-blue OLEDs. In this study, a simple and versatile D-A system combining acridan-based donors and pyrimidine-based acceptors has been developed as a new platform for high-efficiency deep-blue TADF emitters. The designed pre-twisted acridan-pyrimidine D-A molecules exhibit small singlet-triplet energy splitting and high photoluminescence quantum yields, functioning as efficient deep-blue TADF emitters. The OLEDs utilizing these TADF emitters display bright blue electroluminescence with external quantum efficiencies of up to 20.4%, maximum current efficiencies of 41.7 cd A -1 , maximum power efficiencies of 37.2 lm W -1 , and color coordinates of (0.16, 0.23). The design strategy featuring such acridan-pyrimidine D-A motifs can offer great prospects for further developing high-performance deep-blue TADF emitters and TADF-OLEDs.

Near-saturated red emitters: four-coordinate copper(i) halide complexes containing 8-(diphenylphosphino)quinoline and 1-(diphenylphosphino)naphthalene ligands.

PubMed

Liu, Li-Ping; Li, Qian; Xiang, Song-Po; Liu, Li; Zhong, Xin-Xin; Liang, Chen; Li, Guang Hua; Hayat, Tasawar; Alharbi, Njud S; Li, Fa-Bao; Zhu, Nian-Yong; Wong, Wai-Yeung; Qin, Hai-Mei; Wang, Lei

2018-06-07

Recently, highly emissive neutral copper halide complexes have received much attention. Here, a series of four-coordinate mononuclear Cu(i) halide complexes, [CuX(dpqu)(dpna)] (dpqu = 8-(diphenylphosphino)quinoline, dpna = 1-(diphenylphosphino)naphthalene, X = I (1), Br (2) and Cl (3)), were synthesized, and their molecular structures and photophysical properties were investigated. These complexes exhibit near-saturated red emission in the solid state at room temperature and have peak emission wavelengths at 669-691 nm with microsecond lifetimes (τ = 0.46-1.80 μs). Small S1-T1 energy gaps in the solid state indicate that the emission occurs from a thermally activated excited singlet state at ambient temperature. The emission of the complexes 1-3 mainly originates from MLCT transition. The solution-processed devices of complex 1 exhibit stable red emission with a CIE(x, y) of (0.62, 0.38) for a doped device and (0.63, 0.37) for a non-doped device.

Studies of silicon pn junction solar cells

NASA Technical Reports Server (NTRS)

Lindholm, F. A.; Neugroschel, A.

1977-01-01

Modifications of the basic Shockley equations that result from the random and nonrandom spatial variations of the chemical composition of a semiconductor were developed. These modifications underlie the existence of the extensive emitter recombination current that limits the voltage over the open circuit of solar cells. The measurement of parameters, series resistance and the base diffusion length is discussed. Two methods are presented for establishing the energy bandgap narrowing in the heavily-doped emitter region. Corrections that can be important in the application of one of these methods to small test cells are examined. Oxide-charge-induced high-low-junction emitter (OCI-HLE) test cells which exhibit considerably higher voltage over the open circuit than was previously seen in n-on-p solar cells are described.

Bandgap narrowing and emitter efficiency in heavily doped emitter structures revisited

DOE Office of Scientific and Technical Information (OSTI.GOV)

Van Vliet, C.M.

The developments of heavy doping effects and of bandgap narrowing concepts (BGN) during the last two decades are critically discussed. The differences between the real bandgap reduction [Delta]E[sub g] and the apparent electrical bandgap reduction [Delta]G are once more set forth, showing the precise meaning of the density-of-states and degeneracy contributions to [Delta]G. From these concepts, previously elaborated by Marshak and Van Vilet and by Lundstrom et al., the authors indicated before that for negligible recombination the minority-carrier emitter current (J[sub pe]) is given by a Merten-type result. In this paper they show that in the presence of surface andmore » (or) bulk recombination (Auger and SRH) the result of Selvakumar and Roulston is recovered; however, the electrical field in the emitter and the effective intrinsic density of carriers are not those used by these authors but, on the contrary, these quantities are given by the detailed expressions of their previous work.« less

Investigations of the emittance and brightness of ion beams from an electron beam ion source of the Dresden EBIS type.

PubMed

Silze, Alexandra; Ritter, Erik; Zschornack, Günter; Schwan, Andreas; Ullmann, Falk

2010-02-01

We have characterized ion beams extracted from the Dresden EBIS-A, a compact room-temperature electron beam ion source (EBIS) with a permanent magnet system for electron beam compression, using a pepper-pot emittance meter. The EBIS-A is the precursor to the Dresden EBIS-SC in which the permanent magnets have been replaced by superconducting solenoids for the use of the source in high-ion-current applications such as heavy-ion cancer therapy. Beam emittance and brightness values were calculated from data sets acquired for a variety of source parameters, in leaky as well as pulsed ion extraction mode. With box shaped pulses of C(4+) ions at an energy of 39 keV root mean square emittances of 1-4 mm mrad and a brightness of 10 nA mm(-2) mrad(-2) were achieved. The results meet the expectations for high quality ion beams generated by an electron beam ion source.

On the Ionization and Ion Transmission Efficiencies of Different ESI-MS Interfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cox, Jonathan T.; Marginean, Ioan; Smith, Richard D.

2014-09-30

It is well known that the achievable sensitivity of electrospray ionization mass spectrometry (ESI-MS) is largely determined by the ionization efficiency in the ESI source and ion transmission efficiency through the ESI-MS interface. In this report we systematically study the ion transmission and ionization efficiencies in different ESI-MS interface configurations. The configurations under investigation include a single emitter/single inlet capillary, single emitter/multi-inlet capillary, and a subambient pressure ionization with nanoelectrospray (SPIN) MS interfaces with a single emitter and an emitter array, respectively. We present an effective method to evaluate the overall ion utilization efficiency of an ESI-MS interface by measuringmore » the total gas phase ion current transmitted through the interface and correlating it to the observed ion abundance measured in the corresponding mass spectrum. Our experimental results suggest that the overall ion utilization efficiency in the SPIN-MS interface configurations is better than that in the inlet capillary based ESI-MS interface configurations.« less

Out-of-core Evaluations of Uranium Nitride-fueled Converters

NASA Technical Reports Server (NTRS)

Shimada, K.

1972-01-01

Two uranium nitride fueled converters were tested parametrically for their initial characterization and are currently being life-tested out of core. Test method being employed for the parametric and the diagnostic measurements during the life tests, and test results are presented. One converter with a rhenium emitter had an initial output power density of 6.9 W/ sq cm at the black body emitter temperature of 1900 K. The power density remained unchanged for the first 1000 hr of life test but degraded nearly 50% percent during the following 1000 hr. Electrode work function measurements indicated that the uranium fuel was diffusing out of the emitter clad of 0.635 mm. The other converter with a tungsten emitter had an initial output power density of 2.2 W/ sq cm at 1900 K with a power density of 3.9 W/sq cm at 4300 h. The power density suddenly degraded within 20 hr to practically zero output at 4735 hr.

Establishment of design space for high current gain in III-N hot electron transistors

NASA Astrophysics Data System (ADS)

Gupta, Geetak; Ahmadi, Elaheh; Suntrup, Donald J., III; Mishra, Umesh K.

2018-01-01

This paper establishes the design space of III-N hot electron transistors (HETs) for high current gain by designing and fabricating HETs with scaled base thickness. The device structure consists of GaN-based emitter, base and collector regions where emitter and collector barriers are implemented using AlN and InGaN layers, respectively, as polarization-dipoles. Electrons tunnel through the AlN layer to be injected into the base at a high energy where they travel in a quasi-ballistic manner before being collected. Current gain increases from 1 to 3.5 when base thickness is reduced from 7 to 4 nm. The extracted mean free path (λ mfp) is 5.8 nm at estimated injection energy of 1.5 eV.

Investigation of effect of solenoid magnet on emittances of ion beam from laser ablation plasma

NASA Astrophysics Data System (ADS)

Ikeda, Shunsuke; Romanelli, Mark; Cinquegrani, David; Sekine, Megumi; Kumaki, Masafumi; Fuwa, Yasuhiro; Kanesue, Takeshi; Okamura, Masahiro; Horioka, Kazuhiko

2014-02-01

A magnetic field can increase an ion current of a laser ablation plasma and is expected to control the change of the plasma ion current. However, the magnetic field can also make some fluctuations of the plasma and the effect on the beam emittance and the emission surface is not clear. To investigate the effect of a magnetic field, we extracted the ion beams under three conditions where without magnetic field, with magnetic field, and without magnetic field with higher laser energy to measure the beam distribution in phase space. Then we compared the relations between the plasma ion current density into the extraction gap and the Twiss parameters with each condition. We observed the effect of the magnetic field on the emission surface.

Investigation of effect of solenoid magnet on emittances of ion beam from laser ablation plasma.

PubMed

Ikeda, Shunsuke; Romanelli, Mark; Cinquegrani, David; Sekine, Megumi; Kumaki, Masafumi; Fuwa, Yasuhiro; Kanesue, Takeshi; Okamura, Masahiro; Horioka, Kazuhiko

2014-02-01

A magnetic field can increase an ion current of a laser ablation plasma and is expected to control the change of the plasma ion current. However, the magnetic field can also make some fluctuations of the plasma and the effect on the beam emittance and the emission surface is not clear. To investigate the effect of a magnetic field, we extracted the ion beams under three conditions where without magnetic field, with magnetic field, and without magnetic field with higher laser energy to measure the beam distribution in phase space. Then we compared the relations between the plasma ion current density into the extraction gap and the Twiss parameters with each condition. We observed the effect of the magnetic field on the emission surface.

Flat panel ferroelectric electron emission display system

DOEpatents

Sampayan, S.E.; Orvis, W.J.; Caporaso, G.J.; Wieskamp, T.F.

1996-04-16

A device is disclosed which can produce a bright, raster scanned or non-raster scanned image from a flat panel. Unlike many flat panel technologies, this device does not require ambient light or auxiliary illumination for viewing the image. Rather, this device relies on electrons emitted from a ferroelectric emitter impinging on a phosphor. This device takes advantage of a new electron emitter technology which emits electrons with significant kinetic energy and beam current density. 6 figs.

Experimental study of a high intensity radio-frequency cooler

NASA Astrophysics Data System (ADS)

Boussaid, Ramzi; Ban, G.; Cam, J. F.

2015-07-01

Within the framework of the DESIR/SPIRAL-2 project, a radio-frequency quadrupole cooler named SHIRaC has been studied. SHIRaC is a key device of SPIRAL-2, designed to enhance the beam quality required by DESIR. The preliminary study and development of this device has been carried out at Laboratoire de Physique Corpusculaire de CAEN (LPC Caen), France. The goal of this paper is to present the experimental studies conducted on a SHIRaC prototype. The main peculiarity of this cooler is its efficient handling and cooling of ion beams with currents going up as high as 1 μ A which has never before been achieved in any of the previous coolers. Much effort has been made lately into these studies for development of appropriate optics, vacuum and rf systems which allow cooling of beams of large emittance (˜80 π mm mrad ) and high current. The dependencies of SHIRaC's transmission and the cooled beam parameters in terms of geometrical transverse emittance and the longitudinal energy spread have also been discussed. Investigation of beam purity at optimum cooling condition has also been done. Results from the experiments indicate that an emittance reduction of less than 2.5 π mm mrad and a longitudinal energy spread reduction of less than 4 eV are obtained with more than 70% of ion transmission. The emittance is at expected values whereas the energy spread is not.

High quality ultrafast transmission electron microscopy using resonant microwave cavities.

PubMed

Verhoeven, W; van Rens, J F M; Kieft, E R; Mutsaers, P H A; Luiten, O J

2018-05-01

Ultrashort, low-emittance electron pulses can be created at a high repetition rate by using a TM 110 deflection cavity to sweep a continuous beam across an aperture. These pulses can be used for time-resolved electron microscopy with atomic spatial and temporal resolution at relatively large average currents. In order to demonstrate this, a cavity has been inserted in a transmission electron microscope, and picosecond pulses have been created. No significant increase of either emittance or energy spread has been measured for these pulses. At a peak current of 814 ± 2 pA, the root-mean-square transverse normalized emittance of the electron pulses is ɛ n,x =(2.7±0.1)·10 -12  m rad in the direction parallel to the streak of the cavity, and ɛ n,y =(2.5±0.1)·10 -12  m rad in the perpendicular direction for pulses with a pulse length of 1.1-1.3 ps. Under the same conditions, the emittance of the continuous beam is ɛ n,x =ɛ n,y =(2.5±0.1)·10 -12  m rad. Furthermore, for both the pulsed and the continuous beam a full width at half maximum energy spread of 0.95 ± 0.05 eV has been measured. Copyright © 2018 Elsevier B.V. All rights reserved.

High efficient white organic light-emitting diodes with single emissive layer using phosphorescent red, green, and blue dopants

NASA Astrophysics Data System (ADS)

Kim, You-Hyun; Wai Cheah, Kok; Young Kim, Woo

2013-07-01

Phosphorescent white organic light-emitting diodes (PHWOLEDs) with single emissive layer were fabricated by co-doping phosphorescent blue, green, and red emitters with different concentrations. WOLEDs using Ir(piq)3 and Ir(ppy)3 as red and green dopants along with 8% of Firpic as blue dopant with host materials of 4CzPBP in the emissive layer were compared under various doping ratio between Ir(piq)3 and Ir(ppy)3. Triplet-triplet Dexter energy transfer in single emissive PHWOLEDs including three primary colors was saturated from higher triplet energy levels to lower triplet energy levels directly.

Solar cells with gallium phosphide/silicon heterojunction

NASA Astrophysics Data System (ADS)

Darnon, Maxime; Varache, Renaud; Descazeaux, Médéric; Quinci, Thomas; Martin, Mickaël; Baron, Thierry; Muñoz, Delfina

2015-09-01

One of the limitations of current amorphous silicon/crystalline silicon heterojunction solar cells is electrical and optical losses in the front transparent conductive oxide and amorphous silicon layers that limit the short circuit current. We propose to grow a thin (5 to 20 nm) crystalline Gallium Phosphide (GaP) by epitaxy on silicon to form a more transparent and more conducting emitter in place of the front amorphous silicon layers. We show that a transparent conducting oxide (TCO) is still necessary to laterally collect the current with thin GaP emitter. Larger contact resistance of GaP/TCO increases the series resistance compared to amorphous silicon. With the current process, losses in the IR region associated with silicon degradation during the surface preparation preceding GaP deposition counterbalance the gain from the UV region. A first cell efficiency of 9% has been obtained on ˜5×5 cm2 polished samples.

[Design of High Frequency Signal Detecting Circuit of Human Body Impedance Used for Ultrashort Wave Diathermy Apparatus].

PubMed

Fan, Xu; Wang, Yunguang; Cheng, Haiping; Chong, Xiaochen

2016-02-01

The present circuit was designed to apply to human tissue impedance tuning and matching device in ultra-short wave treatment equipment. In order to judge if the optimum status of circuit parameter between energy emitter circuit and accepter circuit is in well syntony, we designed a high frequency envelope detect circuit to coordinate with automatic adjust device of accepter circuit, which would achieve the function of human tissue impedance matching and tuning. Using the sampling coil to receive the signal of amplitude-modulated wave, we compared the voltage signal of envelope detect circuit with electric current of energy emitter circuit. The result of experimental study was that the signal, which was transformed by the envelope detect circuit, was stable and could be recognized by low speed Analog to Digital Converter (ADC) and was proportional to the electric current signal of energy emitter circuit. It could be concluded that the voltage, transformed by envelope detect circuit can mirror the real circuit state of syntony and realize the function of human tissue impedance collecting.

Effect of emitter layer doping concentration on the performance of a silicon thin film heterojunction solar cell

NASA Astrophysics Data System (ADS)

Zhang, Lei; Shen, Hong-Lie; Yue, Zhi-Hao; Jiang, Feng; Wu, Tian-Ru; Pan, Yuan-Yuan

2013-01-01

A novel type of n/i/i/p heterojunction solar cell with a-Si:H(15 nm)/a-Si:H(10 nm)/ epitaxial c-Si(47 μm)/epitaxial c-Si(3 μm) structure is fabricated by using the layer transfer technique, and the emitter layer is deposited by hot wire chemical vapour deposition. The effect of the doping concentration of the emitter layer Sd (Sd=PH3/(PH3+SiH4+H2)) on the performance of the solar cell is studied by means of current density—voltage and external quantum efficiency. The results show that the conversion efficiency of the solar cell first increases to a maximum value and then decreases with Sd increasing from 0.1% to 0.4%. The best performance of the solar cell is obtained at Sd = 0.2% with an open circuit voltage of 534 mV, a short circuit current density of 23.35 mA/cm2, a fill factor of 63.3%, and a conversion efficiency of 7.9%.

Numerical modelling of the CEBAF electron gun with EGUN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Philippe Liger; Geoffrey Krafft

1990-09-10

The electron source used in the injector for the CEBAF accelerator is a Hermosa electron gun with a 2 mm diameter cathode and a control electrode. It produces a 100 keV electron beam to be focused on the first of two apertures which comprise an emittance filter. A normalized emittance of less than {pi} mm mrad at 1.2 mA is set by the requirements of the final beam from the CEBAF linac, since downstream of the filter, a system of two choppers and a third aperture removes 5/6 of the current. In addition, for RF test purposes a higher currentmore » of about 5 mA is needed, possibly at higher emittance. This paper presents a way of calculating the characteristics of the CEBAF electron gun with the gun design code EGUN, and the accuracy of the results is discussed. The transverse shape of the beam delivered by the gun has been observed, and its current measured. A halo around the beam has been seen, and the calculations can reproduce this effect.« less

Fabrication of Gate-Electrode Integrated Carbon-Nanotube Bundle Field Emitters

NASA Technical Reports Server (NTRS)

Toda, Risaku; Bronikowski, Michael; Luong, Edward; Manohara, Harish

2008-01-01

A continuing effort to develop carbon-nanotube-based field emitters (cold cathodes) as high-current-density electron sources has yielded an optimized device design and a fabrication scheme to implement the design. One major element of the device design is to use a planar array of bundles of carbon nanotubes as the field-emission tips and to optimize the critical dimensions of the array (principally, heights of bundles and distances between them) to obtain high area-averaged current density and high reliability over a long operational lifetime a concept that was discussed in more detail in Arrays of Bundles of Carbon Nanotubes as Field Emitters (NPO-40817), NASA Tech Briefs, Vol. 31, No. 2 (February 2007), page 58. Another major element of the design is to configure the gate electrodes (anodes used to extract, accelerate, and/or focus electrons) as a ring that overhangs a recess wherein the bundles of nanotubes are located, such that by virtue of the proximity between the ring and the bundles, a relatively low applied potential suffices to generate the large electric field needed for emission of electrons.

Aberrations and Emittance Growth in the DARHT 2nd Axis Downstream Transport

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schulze, Martin E.

The emittance of the DARHT 2 nd Axis has been inferred from solenoid scans performed in the downstream transport (DST) region using a short kicked pulse. The beam spot size is measured by viewing optical transition radiation (OTR) in the near field as a function of the field (current) of a solenoid magnet (S4). The imaging station containing the OTR target is located about 100 cm downstream of the solenoid magnet. The emittance is then inferred using a beam optics code such as LAMDA or XTR by fitting the data to initial conditions upstream of the S4 solenoid magnet. Themore » initial conditions are the beam size, beam convergence and emittance. The beam energy and current are measured. In preparation for a solenoid scan, the magnets upstream of the solenoid are adjusted to produce a round beam with no beam losses due to scraping in the beam tube. This is different from the standard tune in which the beam tune is adjusted to suppress the effects of ions and rf in the septum dump. In this standard tune, approximately 10% of the beam is lost due to scraping as the beam enters the small 3.75” ID beam tube after the septum. The normalized emittance inferred from recent solenoid scans typically ranges from 600 to 800 π(mm-mrad). This larger beam size increases the sensitivity to any non-linear fields in the Collins quadrupoles that are mounted along the small diameter beam tube. The primary magnet used to adjust the beam size in this region is the S3 solenoid magnet. Measurements made of the beam shape as the beam size was decreased showed significant structure consistent with non-linear fields. Using the measured magnetic fields in the Collins quadrupoles including higher order multipoles, the beam transport through the Collins quadrupoles is simulated and compared to the observed OTR images. The simulations are performed using the beam optics codes TRANSPORT [1] and TURTLE [2]. Estimates of the emittance growth and beam losses are made as a function of the S3 magnet setting. The increase in the spot size on the x-ray production target resulting from this emittance growth is examined for different DST tunes.« less

Interplay between morphological and shielding effects in field emission via Schwarz-Christoffel transformation

NASA Astrophysics Data System (ADS)

Marcelino, Edgar; de Assis, Thiago A.; de Castilho, Caio M. C.

2018-03-01

It is well known that sufficiently strong electrostatic fields are able to change the morphology of Large Area Field Emitters (LAFEs). This phenomenon affects the electrostatic interactions between adjacent sites on a LAFE during field emission and may lead to several consequences, such as: the emitter's degradation, diffusion of absorbed particles on the emitter's surface, deflection due to electrostatic forces, and mechanical stress. These consequences are undesirable for technological applications, since they may significantly affect the macroscopic current density on the LAFE. Despite the technological importance, these processes are not completely understood yet. Moreover, the electrostatic effects due to the proximity between emitters on a LAFE may compete with the morphological ones. The balance between these effects may lead to a non trivial behavior in the apex-Field Enhancement Factor (FEF). The present work intends to study the interplay between proximity and morphological effects by studying a model amenable for an analytical treatment. In order to do that, a conducting system under an external electrostatic field, with a profile limited by two mirror-reflected triangular protrusions on an infinite line, is considered. The FEF near the apex of each emitter is obtained as a function of their shape and the distance between them via a Schwarz-Christoffel transformation. Our results suggest that a tradeoff between morphological and proximity effects on a LAFE may provide an explanation for the observed reduction of the local FEF and its variation at small distances between the emitter sites.

Gamma compensated, self powered neutron detector

DOEpatents

Brown, Donald P.

1977-01-01

An improved, self-powered, gamma compensated, neutron detector having two electrically conductive concentric cylindrical electrodes and a central rod emitter formed from a material which emits beta particles when bombarded by neutrons. The outer electrode and emitter are maintained at a common potential and the neutron representative current is furnished at the inner cylindrical electrode which serves as a collector. The two concentric cylindrical electrodes are designed to exhibit substantially equal electron emission induced by Compton scattering under neutron bombardment to supply the desired gamma compensation.

Deep-UV Emitters and Detectors Based on Lattice-Matched Cubic Oxide Semiconductors (4.2 Optoelectronics)

DTIC Science & Technology

2015-05-14

calculated   by   dividing   photo-­‐‑ generated  current  by  the  optical  power  spectrum  of  the   lamp .    A   UV ...the optimized parameters for growth. Efforts led to significant increases in solar?blind detector responsivity (up to 0.1 A/W) with sub-­ nanoamp...Aug-2014 Approved for Public Release; Distribution Unlimited Final Report: Deep- UV Emitters and Detectors Based on Lattice- Matched Cubic Oxide

Electrical characterisation of SiGe heterojunction bipolar transistors and Si pseudo-HBTS

NASA Astrophysics Data System (ADS)

De Barros, O.; Le Tron, B.; Woods, R. C.; Giroult-Matlakowski, G.; Vincent, G.; Brémond, G.

1996-08-01

This paper reports an electrical characterisation of the emitter-base junction of Si pseudo-HBTs and SiGe HBTs fabricated in a CMOS compatible single polysilicon self-aligned process. From the reverse characteristics it appears that the definition of the emitter-base junction by plasma etching induces peripheral defects that increase the base current of the transistors. Deep level transient spectroscopy measurements show a deep level in the case of SiGe base, whose spatial origin is not fully determinate up to now.

Study of Hot-Electron Effects, Breakdown and Reliability in FETS, HEMTS, and HBT’S

DTIC Science & Technology

1998-08-01

10-20 V ) have been demonstrated, with power added efficiencies between 10% (around 1 W) and 50% (around 20 mW) at 60 GHz. For higher frequencies...IEDM98, pp. 695-698, S. Francisco, CA, December 6-9, 1998. G. Meneghesso, A. Neviani , R. Oesterholt, M. Matloubian, T. Liu, J. Brown, C. Canali and...8217 / / ’ ’ / / " / s / collector-to-emitter voltage VCE ( V ) Figure 1.1: Collector current, Ic vs. the collector to emitter voltage VCE at

Single Spatial-Mode Room-Temperature-Operated 3.0 to 3.4 micrometer Diode Lasers

NASA Technical Reports Server (NTRS)

Frez, Clifford F.; Soibel, Alexander; Belenky, Gregory; Shterengas, Leon; Kipshidze, Gela

2010-01-01

Compact, highly efficient, 3.0 to 3.4 m light emitters are in demand for spectroscopic analysis and identification of chemical substances (including methane and formaldehyde), infrared countermeasures technologies, and development of advanced infrared scene projectors. The need for these light emitters can be currently addressed either by bulky solid-state light emitters with limited power conversion efficiency, or cooled Interband Cascade (IC) semiconductor lasers. Researchers here have developed a breakthrough approach to fabrication of diode mid-IR lasers that have several advantages over IC lasers used for the Mars 2009 mission. This breakthrough is due to a novel design utilizing the strain-engineered quantum-well (QW) active region and quinternary barriers, and due to optimization of device material composition and growth conditions (growth temperatures and rates). However, in their present form, these GaSb-based laser diodes cannot be directly used as a part of sensor systems. The device spectrum is too broad to perform spectroscopic analysis of gas species, and operating currents and voltages are too high. In the current work, the emitters were fabricated as narrow-ridge waveguide index-guided lasers rather than broad stripe-gain guided multimode Fabry-Perot (FP) lasers as was done previously. These narrow-ridge waveguide mid-IR lasers exhibit much lower power consumptions, and can operate in a single spatial mode that is necessary for demonstration of single-mode distributed feedback (DBF) devices for spectroscopic applications. These lasers will enable a new generation of compact, tunable diode laser spectrometers with lower power consumption, reduced complexity, and significantly reduced development costs. These lasers can be used for the detection of HCN, C2H2, methane, and ethane.

Nearly Blinking-Free, High-Purity Single-Photon Emission by Colloidal InP/ZnSe Quantum Dots.

PubMed

Chandrasekaran, Vigneshwaran; Tessier, Mickaël D; Dupont, Dorian; Geiregat, Pieter; Hens, Zeger; Brainis, Edouard

2017-10-11

Colloidal core/shell InP/ZnSe quantum dots (QDs), recently produced using an improved synthesis method, have a great potential in life-science applications as well as in integrated quantum photonics and quantum information processing as single-photon emitters. Single-particle spectroscopy of 10 nm QDs with 3.2 nm cores reveals strong photon antibunching attributed to fast (70 ps) Auger recombination of multiple excitons. The QDs exhibit very good photostability under strong optical excitation. We demonstrate that the antibunching is preserved when the QDs are excited above the saturation intensity of the fundamental-exciton transition. This result paves the way toward their usage as high-purity on-demand single-photon emitters at room temperature. Unconventionally, despite the strong Auger blockade mechanism, InP/ZnSe QDs also display very little luminescence intermittency ("blinking"), with a simple on/off blinking pattern. The analysis of single-particle luminescence statistics places these InP/ZnSe QDs in the class of nearly blinking-free QDs, with emission stability comparable to state-of-the-art thick-shell and alloyed-interface CdSe/CdS, but with improved single-photon purity.

The 3-D numerical simulation research of vacuum injector for linear induction accelerator

NASA Astrophysics Data System (ADS)

Liu, Dagang; Xie, Mengjun; Tang, Xinbing; Liao, Shuqing

2017-01-01

Simulation method for voltage in-feed and electron injection of vacuum injector is given, and verification of the simulated voltage and current is carried out. The numerical simulation for the magnetic field of solenoid is implemented, and a comparative analysis is conducted between the simulation results and experimental results. A semi-implicit difference algorithm is adopted to suppress the numerical noise, and a parallel acceleration algorithm is used for increasing the computation speed. The RMS emittance calculation method of the beam envelope equations is analyzed. In addition, the simulated results of RMS emittance are compared with the experimental data. Finally, influences of the ferromagnetic rings on the radial and axial magnetic fields of solenoid as well as the emittance of beam are studied.

Minimization of three-dimensional beam emittance growth in rare-isotope accelerator

NASA Astrophysics Data System (ADS)

Oh, B. H.; Yoon, M.

2016-12-01

In this paper, we describe a research to minimize the three-dimensional (3D) emittance growth (EG) in the RAON accelerator, a heavy ion accelerator currently being developed in Korea to produce various rare isotopes. The emittance minimization is performed using the multi-objective genetic algorithm and the simplex method. We use them to analyze the driver linac for the in-flight fragmentation separator of the RAON facility and show that redesign of the 90-degree bending section of the RAON accelerator together with adjustment of optics in the upstream and downstream superconducting linacs can limit the 3D EG to 20 % in the entire region of the driver linac. Effects of various magnet and rf accelerating cavity errors on the beam-EG are also discussed.

Measurement of ion species in high current ECR H⁺/D⁺ ion source for IFMIF (International Fusion Materials Irradiation Facility).

PubMed

Shinto, K; Senée, F; Ayala, J-M; Bolzon, B; Chauvin, N; Gobin, R; Ichimiya, R; Ihara, A; Ikeda, Y; Kasugai, A; Kitano, T; Kondo, K; Marqueta, A; Okumura, Y; Takahashi, H; Valette, M

2016-02-01

Ion species ratio of high current positive hydrogen/deuterium ion beams extracted from an electron-cyclotron-resonance ion source for International Fusion Materials Irradiation Facility accelerator was measured by the Doppler shift Balmer-α line spectroscopy. The proton (H(+)) ratio at the middle of the low energy beam transport reached 80% at the hydrogen ion beam extraction of 100 keV/160 mA and the deuteron (D(+)) ratio reached 75% at the deuterium ion beam extraction of 100 keV/113 mA. It is found that the H(+) ratio measured by the spectroscopy gives lower than that derived from the phase-space diagram measured by an Allison scanner type emittance monitor. The H(+)/D(+) ratio estimated by the emittance monitor was more than 90% at those extraction currents.

High current liquid metal ion source using porous tungsten multiemitters.

PubMed

Tajmar, M; Vasiljevich, I; Grienauer, W

2010-12-01

We recently developed an indium Liquid-Metal-Ion-Source that can emit currents from sub-μA up to several mA. It is based on a porous tungsten crown structure with 28 individual emitters, which is manufactured using Micro-Powder Injection Molding (μPIM) and electrochemical etching. The emitter combines the advantages of internal capillary feeding with excellent emission properties due to micron-size tips. Significant progress was made on the homogeneity of the emission over its current-voltage characteristic as well as on investigating its long-term stability. This LMIS seems very suitable for space propulsion as well as for micro/nano manufacturing applications with greatly increased milling/drilling speeds. This paper summarizes the latest developments on our porous multiemitters with respect to manufacturing, emission properties and long-term testing. Copyright © 2010 Elsevier B.V. All rights reserved.

Understanding and development of manufacturable screen-printed contacts on high sheet-resistance emitters for low-cost silicon solar cells

NASA Astrophysics Data System (ADS)

Hilali, Mohamed M.

2005-11-01

A simple cost-effective approach was proposed and successfully employed to fabricate high-quality screen-printed (SP) contacts to high sheet-resistance emitters (100 O/sq) to improve the Si solar cell efficiency. Device modeling was used to quantify the performance enhancement possible from the high sheet-resistance emitter for various cell designs. It was found that for performance enhancement from the high sheet-resistance emitter, certain cell design criteria must be satisfied. Model calculations showed that in order to achieve any performance enhancement over the conventional ˜40 O/sq emitter, the high sheet resistance emitter solar cell must have a reasonably good (<120,000 cm/s) or low front-surface recombination velocity (FSRV). Model calculations were also performed to establish requirements for high fill factors (FFs). The results showed that the series resistance should be less than 0.8 O-cm2, the shunt resistance should be greater than 1000 O-cm2, and the junction leakage current should be less than 25 nA/cm2. Analytical microscopy and surface analysis techniques were used to study the Ag-Si contact interface of different SP Ag pastes. Physical and electrical properties of SP Ag thick-film contacts were studied and correlated to understand and achieve good-quality ohmic contacts to high sheet-resistance emitters for solar cells. This information was then used to define the criteria for high-quality screen-printed contacts. The role of paste constituents and firing scheme on contact quality were investigated to tailor the high-quality screen-printed contact interface structure that results in high performance solar cells. Results indicated that small particle size, high glass transition temperature, rapid firing and less aggressive glass frit help in producing high-quality contacts. Based on these results high-quality SP contacts with high FFs > 0.78 on high sheet-resistance emitters were achieved for the first time using a simple single-step firing process. This technology was applied to different substrates (monocrystalline and multicrystalline) and surfaces (textured and planar). Cell efficiencies of ˜16.2% on low-cost EFG ribbon substrates were achieved on high sheet-resistance emitters with SP contacts. A record high-efficiency SP solar cell of 19% with textured high sheet-resistance emitter was also fabricated and modeled.

Specific innovative semi-transparent solar cell for indoor and outdoor LiFi applications.

PubMed

Bialic, Emilie; Maret, Luc; Kténas, Dimitri

2015-09-20

Research in light-fidelity (LiFi), also called visible light communication (VLC), has gained huge interest. In such a communication system, an optical sensor translates the received luminous modulation flux into an electrical signal which is decoded. To consider LiFi as an alternative solution for wireless communication, the receiver must be operational in indoor and outdoor configurations. Photovoltaic modules could appear as a solution to this issue. In this paper, we present signal-to-noise ratio (SNR) response in the frequency of two different kinds of photovoltaic modules. We characterize in detail the SNR by using an experimental setup which connects a software-based direct current optical (DCO)-orthogonal frequency division multiiplexing emitter and receiver to hardware optical front ends. We analyze LiFi performances under different lighting conditions. We prove that the available bandwidth depends drastically on ambient lighting configurations. Under specific lighting conditions, a bandwidth around 4 MHz corresponding a data rate around 8 Mbit/s could be achieved. We present the lighting saturation effects and we prove that the semi-transparent solar cell under study improves their performances (both bandwidth and data rate) in high ambient lighting environments.

A new curvature compensation technique for CMOS voltage reference using |VGS| and ΔVBE

NASA Astrophysics Data System (ADS)

Xuemin, Li; Mao, Ye; Gongyuan, Zhao; Yun, Zhang; Yiqiang, Zhao

2016-05-01

A new mixed curvature compensation technique for CMOS voltage reference is presented, which resorts to two sub-references with complementary temperature characteristics. The first sub-reference is the source-gate voltage |VGS|p of a PMOS transistor working in the saturated region. The second sub-reference is the weighted sum of gate-source voltages |VGS|n of NMOS transistors in the subthreshold region and the difference between two base-emitter voltages ΔVBE of bipolar junction transistors (BJTs). The voltage reference implemented utilizing the proposed curvature compensation technique exhibits a low temperature coefficient and occupies a small silicon area. The proposed technique was verified in 0.18 μm standard CMOS process technology. The performance of the circuit has been measured. The measured results show a temperature coefficient as low as 12.7 ppm/°C without trimming, over a temperature range from -40 to 120 °C, and the current consumption is 50 μA at room temperature. The measured power-supply rejection ratio (PSRR) is -31.2 dB @ 100 kHz. The circuit occupies an area of 0.045 mm2. Project supported by the National Natural Science Foundation of China (No. 61376032).

A Yellow-Emitting Homoleptic Iridium(III) Complex Constructed from a Multifunctional Spiro Ligand for Highly Efficient Phosphorescent Organic Light-Emitting Diodes.

PubMed

Ren, Bao-Yi; Guo, Run-Da; Zhong, Dao-Kun; Ou, Chang-Jin; Xiong, Gang; Zhao, Xiang-Hua; Sun, Ya-Guang; Jurow, Matthew; Kang, Jun; Zhao, Yi; Li, Sheng-Biao; You, Li-Xin; Wang, Lin-Wang; Liu, Yi; Huang, Wei

2017-07-17

To suppress concentration quenching and to improve charge-carrier injection/transport in the emission layer (EML) of phosphorescent organic light-emitting diodes (PhOLEDs), a facial homoleptic iridium(III) complex emitter with amorphous characteristics was designed and prepared in one step from a multifunctional spiro ligand containing spiro[fluorene-9,9'-xanthene] (SFX) unit. Single-crystal X-ray analysis of the resulting fac-Ir(SFXpy) 3 complex revealed an enlarged Ir···Ir distance and negligible intermolecular π-π interactions between the spiro ligands. The emitter exhibits yellow emission and almost equal energy levels compared to the commercial phosphor iridium(III) bis(4-phenylthieno[3,2-c]pyridinato-N,C 2 ')acetylacetonate (PO-01). Dry-processed devices using a common host, 4,4'-bis(N-carbazolyl)-1,1'-biphenyl, and the fac-Ir(SFXpy) 3 emitter at a doping concentration of 15 wt % exhibited a peak performance of 46.2 cd A -1 , 36.3 lm W -1 , and 12.1% for the current efficiency (CE), power efficiency (PE), and external quantum efficiency (EQE), respectively. Compared to control devices using PO-01 as the dopant, the fac-Ir(SFXpy) 3 -based devices remained superior in the doping range between 8 and 15 wt %. The current densities went up with increasing doping concentration at the same driving voltage, while the roll-offs remain relatively low even at high doping levels. The superior performance of the new emitter-based devices was ascribed to key roles of the spiro ligand for suppressing aggregation and assisting charge-carrier injection/transport. Benefiting from the amorphous stability of the emitter, the wet-processed device also exhibited respectful CE, PE, and EQE of 32.2 cd A -1 , 22.1 lm W -1 , and 11.3%, respectively, while the EQE roll-off was as low as 1.7% at the luminance of 1000 cd m -2 . The three-dimensional geometry and binary-conjugation features render SFX the ideal multifunctional module for suppressing concentration quenching, facilitating charge-carrier injection/transport, and improving the amorphous stability of iridium(III)-based phosphorescent emitters.

Long-Term Reliability of High Speed SiGe/Si Heterojunction Bipolar Transistors

NASA Technical Reports Server (NTRS)

Ponchak, George E. (Technical Monitor); Bhattacharya, Pallab

2003-01-01

Accelerated lifetime tests were performed on double-mesa structure Si/Si0.7Ge0.3/Si npn heterojunction bipolar transistors, grown by molecular beam epitaxy, in the temperature range of 175C-275C. Both single- and multiple finger transistors were tested. The single-finger transistors (with 5x20 micron sq m emitter area) have DC current gains approximately 40-50 and f(sub T) and f(sub MAX) of up to 22 GHz and 25 GHz, respectively. The multiple finger transistors (1.4 micron finger width, 9 emitter fingers with total emitter area of 403 micron sq m) have similar DC current gain but f(sub T) of 50 GHz. It is found that a gradual degradation in these devices is caused by the recombination enhanced impurity diffusion (REID) of boron atoms from the p-type base region and the associated formation of parasitic energy barriers to electron transport from the emitter to collector layers. This REID has been quantitatively modeled and explained, to the first order of approximation, and the agreement with the measured data is good. The mean time to failure (MTTF) of the devices at room temperature is estimated from the extrapolation of the Arrhenius plots of device lifetime versus reciprocal temperature. The results of the reliability tests offer valuable feedback for SiGe heterostructure design in order to improve the long-term reliability of the devices and circuits made with them. Hot electron induced degradation of the base-emitter junction was also observed during the accelerated lifetime testing. In order to improve the HBT reliability endangered by the hot electrons, deuterium sintered techniques have been proposed. The preliminary results from this study show that a deuterium-sintered HBT is, indeed, more resistant to hot-electron induced base-emitter junction degradation. SiGe/Si based amplifier circuits were also subjected to lifetime testing and we extrapolate MTTF is approximately 1.1_10(exp 6) hours at 125iC junction temperature from the circuit lifetime data.

Bi-alkali antimonide photocathode growth: An X-ray diffraction study

DOE PAGES

Schubert, Susanne; Wong, Jared; Feng, Jun; ...

2016-07-21

Bi-alkali antimonide photocathodes are one of the best known sources of electrons for high current and/or high bunch charge applications like Energy Recovery Linacs or Free Electron Lasers. Despite their high quantum efficiency in visible light and low intrinsic emittance, the surface roughness of these photocathodes prohibits their use as low emittance cathodes in high accelerating gradient superconducting and normal conducting radio frequency photoguns and limits the minimum possible intrinsic emittance near the threshold. Also, the growth process for these materials is largely based on recipes obtained by trial and error and is very unreliable. In this paper, using X-raymore » diffraction, we investigate the different structural and chemical changes that take place during the growth process of the bi-alkali antimonide material K 2 CsSb. Our measurements give us a deeper understanding of the growth process of alkali-antimonide photocathodes allowing us to optimize it with the goal of minimizing the surface roughness to preserve the intrinsic emittance at high electric fields and increasing its reproducibility.« less

Characterizing the Performance of the Princeton Advanced Test Stand Ion Source

NASA Astrophysics Data System (ADS)

Stepanov, A.; Gilson, E. P.; Grisham, L.; Kaganovich, I.; Davidson, R. C.

2012-10-01

The Princeton Advanced Test Stand (PATS) is a compact experimental facility for studying the physics of intense beam-plasma interactions relevant to the Neutralized Drift Compression Experiment - II (NDCX-II). The PATS facility consists of a multicusp RF ion source mounted on a 2 m-long vacuum chamber with numerous ports for diagnostic access. Ar+ beams are extracted from the source plasma with three-electrode (accel-decel) extraction optics. The RF power and extraction voltage (30 - 100 kV) are pulsed to produce 100 μsec duration beams at 0.5 Hz with excellent shot-to-shot repeatability. Diagnostics include Faraday cups, a double-slit emittance scanner, and scintillator imaging. This work reports measurements of beam parameters for a range of beam energies (30 - 50 keV) and currents to characterize the behavior of the ion source and extraction optics. Emittance scanner data is used to calculate the beam trace-space distribution and corresponding transverse emittance. If the plasma density is changing during a beam pulse, time-resolved emittance scanner data has been taken to study the corresponding evolution of the beam trace-space distribution.

Interband Tunneling for Hole Injection in III-Nitride Ultraviolet Emitters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yuewei; Krishnamoorthy, Sriram; Johnson, Jared M.

Low p-type conductivity and high contact resistance remain a critical problem in wide band gap AlGaN-based ultraviolet light emitters due to the high acceptor ionization energy. In this work, interband tunneling is demonstrated for non-equilibrium injection of holes through the use of ultra-thin polarization-engineered layers that enhance tunneling probability by several orders of magnitude over a PN homojunction. Al 0.3Ga 0.7N interband tunnel junctions with a lowresistance of 5.6 × 10 -4 Ω cm 2 were obtained and integrated on ultraviolet light emitting diodes.Tunnel injection of holes was used to realize GaN-free ultraviolet light emitters with bottom and top n-typemore » Al 0.3Ga 0.7N contacts. At an emission wavelength of 327 nm, stable output power of 6 W/cm 2 at a current density of 120 A/cm 2 with a forward voltage of 5.9 V was achieved. Our demonstration of efficient interband tunneling could enable device designs for higher efficiency ultraviolet emitters.« less

Parameter Optimization of PAL-XFEL Injector

NASA Astrophysics Data System (ADS)

Lee, Jaehyun; Ko, In Soo; Han, Jang-Hui; Hong, Juho; Yang, Haeryong; Min, Chang Ki; Kang, Heung-Sik

2018-05-01

A photoinjector is used as the electron source to generate a high peak current and low emittance beam for an X-ray free electron laser (FEL). The beam emittance is one of the critical parameters to determine the FEL performance together with the slice energy spread and the peak current. The Pohang Accelerator Laboratory X-ray Free Electron Laser (PAL-XFEL) was constructed in 2015, and the beam commissioning was carried out in spring 2016. The injector is running routinely for PAL-XFEL user operation. The operational parameters of the injector have been optimized experimentally, and these are somewhat different from the originally designed ones. Therefore, we study numerically the injector parameters based on the empirically optimized parameters and review the present operating condition.

Molecular dynamics simulations of field emission from a planar nanodiode

NASA Astrophysics Data System (ADS)

Torfason, Kristinn; Valfells, Agust; Manolescu, Andrei

2015-03-01

High resolution molecular dynamics simulations with full Coulomb interactions of electrons are used to investigate field emission in planar nanodiodes. The effects of space-charge and emitter radius are examined and compared to previous results concerning transition from Fowler-Nordheim to Child-Langmuir current [Y. Y. Lau, Y. Liu, and R. K. Parker, Phys. Plasmas 1, 2082 (1994) and Y. Feng and J. P. Verboncoeur, Phys. Plasmas 13, 073105 (2006)]. The Fowler-Nordheim law is used to determine the current density injected into the system and the Metropolis-Hastings algorithm to find a favourable point of emission on the emitter surface. A simple fluid like model is also developed and its results are in qualitative agreement with the simulations.

Molecular dynamics simulations of field emission from a planar nanodiode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Torfason, Kristinn; Valfells, Agust; Manolescu, Andrei

High resolution molecular dynamics simulations with full Coulomb interactions of electrons are used to investigate field emission in planar nanodiodes. The effects of space-charge and emitter radius are examined and compared to previous results concerning transition from Fowler-Nordheim to Child-Langmuir current [Y. Y. Lau, Y. Liu, and R. K. Parker, Phys. Plasmas 1, 2082 (1994) and Y. Feng and J. P. Verboncoeur, Phys. Plasmas 13, 073105 (2006)]. The Fowler-Nordheim law is used to determine the current density injected into the system and the Metropolis-Hastings algorithm to find a favourable point of emission on the emitter surface. A simple fluid likemore » model is also developed and its results are in qualitative agreement with the simulations.« less

Diamond field emitter array cathodes and possibilities of employing additive manufacturing for dielectric laser accelerating structures

NASA Astrophysics Data System (ADS)

Simakov, Evgenya I.; Andrews, Heather L.; Herman, Matthew J.; Hubbard, Kevin M.; Weis, Eric

2017-03-01

Demonstration of a stand-alone practical dielectric laser accelerator (DLA) requires innovation in two major critical components: high-current ultra-low-emittance cathodes and efficient laser accelerator structures. LANL develops two technologies that in our opinion are applicable to the novel DLA architectures: diamond field emitter array (DFEA) cathodes and additive manufacturing of photonic band-gap (PBG) structures. This paper discusses the results of testing of DFEA cathodes in the field-emission regime and the possibilities for their operation in the photoemission regime, and compares their emission characteristics to the specific needs of DLAs. We also describe recent advances in additive manufacturing of dielectric woodpile structures using a Nanoscribe direct laser-writing device capable of maskless lithography and additive manufacturing, and the development of novel infrared dielectric materials compatible with additive manufacturing.

Reprint of: High current liquid metal ion source using porous tungsten multiemitters.

PubMed

Tajmar, M; Vasiljevich, I; Grienauer, W

2011-05-01

We recently developed an indium Liquid-Metal-Ion-Source that can emit currents from sub-μA up to several mA. It is based on a porous tungsten crown structure with 28 individual emitters, which is manufactured using Micro-Powder Injection Molding (μPIM) and electrochemical etching. The emitter combines the advantages of internal capillary feeding with excellent emission properties due to micron-size tips. Significant progress was made on the homogeneity of the emission over its current-voltage characteristic as well as on investigating its long-term stability. This LMIS seems very suitable for space propulsion as well as for micro/nano manufacturing applications with greatly increased milling/drilling speeds. This paper summarizes the latest developments on our porous multiemitters with respect to manufacturing, emission properties and long-term testing. Copyright © 2010 Elsevier B.V. All rights reserved.

Two-photon absorption in layered transition metal dichalcogenides

NASA Astrophysics Data System (ADS)

Dong, Ningning; Zhang, Saifeng; Li, Yuanxin; Wang, Jun

2018-02-01

Two-dimensional (2D) layered transition metal dichalcogenides (TMDCs) exhibit unique nonlinear optical (NLO) features and have becoming intriguing and promising candidate materials for photonic and optoelectronic devices with high performance and unique functions. Owing to layered geometry and the thickness-dependent bandgap, we studied the ultrafast NLO properties of a range of TMDCs. TMDCs with high-quality layered nanosheets were prepared through chemical vapor deposition (CVD) technique and vapor-phase growth method. Saturable absorption, two photon absorption (TPA) and two photon pumped frequency up-converted luminescence were observed from these 2D nanostructures. The exciting results open up the door to 2D photonic devices, such as passive mode-lockers, Q-switchers, optical limiters, light emitters, etc.

Gas-pressure dependence of terahertz-pulse generation in a laser-generated nitrogen plasma

NASA Astrophysics Data System (ADS)

Löffler, T.; Roskos, H. G.

2002-03-01

Far-infrared (terahertz) pulses can be generated by photoionization of electrically biased gases with amplified laser pulses [T. Löffler, F. Jacob, and H. G. Roskos, Appl. Phys. Lett. 77, 453 (2000)]. The efficiency of the generation process can be significantly increased when the absolute gas pressure is raised because it is then possible to apply higher bias fields close to the dielectric breakdown field of the gas which increases with the pressure. The dependence of the THz output on the optical pump power does not show any indication of saturation, making the plasma emitter an interesting source for THz pulses especially in conjunction with terawatt laser systems.

Effect of current on the maximum possible reward.

PubMed

Gallistel, C R; Leon, M; Waraczynski, M; Hanau, M S

1991-12-01

Using a 2-lever choice paradigm with concurrent variable interval schedules of reward, it was found that when pulse frequency is increased, the preference-determining rewarding effect of 0.5-s trains of brief cathodal pulses delivered to the medial forebrain bundle of the rat saturates (stops increasing) at values ranging from 200 to 631 pulses/s (pps). Raising the current lowered the saturation frequency, which confirms earlier, more extensive findings showing that the rewarding effect of short trains saturates at pulse frequencies that vary from less than 100 pps to more than 800 pps, depending on the current. It was also found that the maximum possible reward--the magnitude of the reward at or beyond the saturation pulse frequency--increases with increasing current. Thus, increasing the current reduces the saturation frequency but increases the subjective magnitude of the maximum possible reward.

Refined beam measurements on the SNS H- injector

NASA Astrophysics Data System (ADS)

Han, B. X.; Welton, R. F.; Murray, S. N.; Pennisi, T. R.; Santana, M.; Stinson, C. M.; Stockli, M. P.

2017-08-01

The H- injector for the SNS RFQ accelerator consists of an RF-driven, Cs-enhanced H- ion source and a compact, two-lens electrostatic LEBT. The LEBT output and the RFQ input beam current are measured by deflecting the beam on to an annular plate at the RFQ entrance. Our method and procedure have recently been refined to improve the measurement reliability and accuracy. The new measurements suggest that earlier measurements tended to underestimate the currents by 0-2 mA, but essentially confirm H- beam currents of 50-60 mA being injected into the RFQ. Emittance measurements conducted on a test stand featuring essentially the same H- injector setup show that the normalized rms emittance with 0.5% threshold (99% inclusion of the total beam) is in a range of 0.25-0.4 mm.mrad for a 50-60 mA beam. The RFQ output current is monitored with a BCM toroid. Measurements as well as simulations with the PARMTEQ code indicate an underperforming transmission of the RFQ since around 2012.

High efficiency thermionic converter studies

NASA Technical Reports Server (NTRS)

Huffman, F. N.; Sommer, A. H.; Balestra, C. L.; Briere, D. P.; Oettinger, P. E.

1976-01-01

The objective is to improve thermionic converter performance by means of reduced interelectrode losses, greater emitter capabilities, and lower collector work functions until the converter performance level is suitable for out-of-core space reactors and radioisotope generators. Electrode screening experiments have identified several promising collector materials. Back emission work function measurements of a ZnO collector in a thermionic diode have given values less than 1.3 eV. Diode tests were conducted over the range of temperatures of interest for space power applications. Enhanced mode converter experiments have included triodes operated in both the surface ionization and plasmatron modes. Pulsed triodes were studied as a function of pulse length, pulse potential, inert gas fill pressure, cesium pressure, spacing, emitter temperature and collector temperature. Current amplifications (i.e., mean output current/mean grid current) of several hundred were observed up to output current densities of one amp/sq cm. These data correspond to an equivalent arc drop less than 0.1 eV.

Space-charge-limited solid-state triode

NASA Technical Reports Server (NTRS)

Shumka, A. (Inventor)

1975-01-01

A solid-state triode is provided from a wafer of nearinstrinsic semiconductor material sliced into filaments of rectangular cross section. Before slicing, emitter and collector regions are formed on the narrow sides of the filaments, and after slicing gate regions are formed in arrow strips extending longitudinally along the midsections of the wide sides of the filaments. Contacts are then formed on the emitter, collector and gate regions of each filament individually for a single filament device, or in parallel for an array of filament devices to increase load current.

Numerical simulations of the charged-particle flow dynamics for sources with a curved emission surface

NASA Astrophysics Data System (ADS)

Altsybeyev, V. V.

2016-12-01

The implementation of numerical methods for studying the dynamics of particle flows produced by pulsed sources is discussed. A particle tracking method with so-called gun iteration for simulations of beam dynamics is used. For the space charge limited emission problem, we suggest a Gauss law emission model for precise current-density calculation in the case of a curvilinear emitter. The results of numerical simulations of particle-flow formation for cylindrical bipolar diode and for diode with elliptical emitter are presented.

Achieving ultra-high temperatures with a resistive emitter array

NASA Astrophysics Data System (ADS)

Danielson, Tom; Franks, Greg; Holmes, Nicholas; LaVeigne, Joe; Matis, Greg; McHugh, Steve; Norton, Dennis; Vengel, Tony; Lannon, John; Goodwin, Scott

2016-05-01

The rapid development of very-large format infrared detector arrays has challenged the IR scene projector community to also develop larger-format infrared emitter arrays to support the testing of systems incorporating these detectors. In addition to larger formats, many scene projector users require much higher simulated temperatures than can be generated with current technology in order to fully evaluate the performance of their systems and associated processing algorithms. Under the Ultra High Temperature (UHT) development program, Santa Barbara Infrared Inc. (SBIR) is developing a new infrared scene projector architecture capable of producing both very large format (>1024 x 1024) resistive emitter arrays and improved emitter pixel technology capable of simulating very high apparent temperatures. During earlier phases of the program, SBIR demonstrated materials with MWIR apparent temperatures in excess of 1400 K. New emitter materials have subsequently been selected to produce pixels that achieve even higher apparent temperatures. Test results from pixels fabricated using the new material set will be presented and discussed. A 'scalable' Read In Integrated Circuit (RIIC) is also being developed under the same UHT program to drive the high temperature pixels. This RIIC will utilize through-silicon via (TSV) and Quilt Packaging (QP) technologies to allow seamless tiling of multiple chips to fabricate very large arrays, and thus overcome the yield limitations inherent in large-scale integrated circuits. Results of design verification testing of the completed RIIC will be presented and discussed.

Efficient, deep-blue TADF-emitters for OLED display applications (Conference Presentation)

NASA Astrophysics Data System (ADS)

Volz, Daniel; Baumann, Thomas

2016-09-01

Currently, the mobile display market is strongly shifting towards AMOLED technology, in order to enable curved and flexible displays. This leads to a growing demand for highly efficient OLED emitters to reduce the power consumption and increase display resolution at the same time. While highly efficient green and red OLEDs already found their place in commercial OLED-displays, the lack of efficient blue emitters is still an issue. Consequently, the active area for blue is considerably larger than for green and red pixels, to make up for the lower efficiency. We intend to close this efficiency-gap with novel emitters based on thermally activated delayed fluorescence (TADF) technology. Compared to state-of-the-art fluorescent dopants, the efficiency of TADF-emitters is up to four times higher. At the same time, it is possible to design them in a way to maintain deep blue emission, i.e. CIE y < 0.2. These aspects are relevant to produce efficient high resolution AMOLED displays. Apart from these direct customer benefits, our TADF technology does not contain any rare elements, which allows for the fabrication of sustainable OLED technology. In this work, we highlight one of our recently developed blue TADF materials. Basic material properties as well as first device results are discussed. In a bottom-emitting device, a CIEx/CIEy coordinate of (0.16/0.17) was achieved with efficiency values close to 20% EQE.

Diagnostics for a 1.2 kA, 1 MeV, electron induction injector

NASA Astrophysics Data System (ADS)

Houck, T. L.; Anderson, D. E.; Eylon, S.; Henestroza, E.; Lidia, S. M.; Vanecek, D. L.; Westenskow, G. A.; Yu, S. S.

1998-12-01

We are constructing a 1.2 kA, 1 MeV, electron induction injector as part of the RTA program, a collaborative effort between LLNL and LBNL to develop relativistic klystrons for Two-Beam Accelerator applications. The RTA injector will also be used in the development of a high-gradient, low-emittance, electron source and beam diagnostics for the second axis of the Dual Axis Radiographic Hydrodynamic Test (DARHT) Facility. The electron source will be a 3.5″-diameter, thermionic, flat-surface, m-type cathode with a maximum shroud field stress of approximately 165 kV/cm. Additional design parameters for the injector include a pulse length of over 150 ns flat top (1% energy variation), and a normalized edge emittance of less than 200 π-mm-mr. Precise measurement of the beam parameters is required so that performance of the RTA injector can be confidently scaled to the 4 kA, 3 MeV, and 2-microsecond pulse parameters of the DARHT injector. Planned diagnostics include an isolated cathode with resistive divider for direct measurement of current emission, resistive wall and magnetic probe current monitors for measuring beam current and centroid position, capacitive probes for measuring A-K gap voltage, an energy spectrometer, and a pepperpot emittance diagnostic. Details of the injector, beam line, and diagnostics are presented.

Transport and emittance study for 18 GHz superconducting-ECR ion source at RCNP.

PubMed

Yorita, T; Hatanaka, K; Fukuda, M; Ueda, H; Kibayashi, M; Morinobu, S; Tamii, A

2012-02-01

As the upgrade program of the azimuthally varying field (AVF) cyclotron is at the cyclotron facility of the RCNP, Osaka University for the improvement of the quality, stability, and intensity of accelerated beams, an 18 GHz superconducting (SC) ECR ion source has been installed to increase beam currents and to extend the variety of ions, especially for highly charged heavy ions which can be accelerated by RCNP AVF cyclotron. The production development of several ions such as B, O, N, Ne, Ar, Ni, Kr, and Xe has been performed by Yorita et al. [Rev. Sci. Instrum. 79, 02A311(2008); 81, 02A332 (2010)]. Further studies for the beam transport have been done in order to improve the beam current more for injection of cyclotron. The effect of field leakage of AVF main coil is not negligible and additional steering magnet has been installed and then beam transmission has been improved. The emittance monitor has also been developed for the purpose of investigating correlation between emittance of beam from ECR ion sources and injection efficiency. The monitor consists with BPM82 with rotating wire for fast measurement for efficient study.

Novel planar field emission of ultra-thin individual carbon nanotubes.

PubMed

Song, Xuefeng; Gao, Jingyun; Fu, Qiang; Xu, Jun; Zhao, Qing; Yu, Dapeng

2009-10-07

In this work, we proposed and realized a new prototype of planar field emission device based on as-grown individual carbon nanotubes (CNTs) on the surface of a Si-SiO2 substrate. The anode, cathode and the CNT tip all lie on the same surface, so the electron emission is reduced from three-dimensional to two-dimensional. The benefits of such a design include usage of thinner CNT emitters, integrity with planar technology, stable construction, better heat dissipation, etc. A tip-to-tip field emission device was presented besides the tip-to-electrode one. Real-time, in situ observation of the planar field emission was realized in a scanning electron microscope (SEM). Measurements showed that the minimum voltage for 10 nA field emission current was only 8.0 V and the maximum emission current density in an individual CNT emitter (1.0 nm in diameter) exceeded 5.7 x 10(8) A cm(-2). These results stand out in the comparison with recent works on individual CNT field emission, indicating that the planar devices based on ultra-thin individual CNTs are more competitive candidates for next-generation electron field emitters.

Saturation current and collection efficiency for ionization chambers in pulsed beams.

PubMed

DeBlois, F; Zankowski, C; Podgorsak, E B

2000-05-01

Saturation currents and collection efficiencies in ionization chambers exposed to pulsed megavoltage photon and electron beams are determined assuming a linear relationship between 1/I and 1/V in the extreme near-saturation region, with I and V the chamber current and polarizing voltage, respectively. Careful measurements of chamber current against polarizing voltage in the extreme near-saturation region reveal a current rising faster than that predicted by the linear relationship. This excess current combined with conventional "two-voltage" technique for determination of collection efficiency may result in an up to 0.7% overestimate of the saturation current for standard radiation field sizes of 10X10 cm2. The measured excess current is attributed to charge multiplication in the chamber air volume and to radiation-induced conductivity in the stem of the chamber (stem effect). These effects may be accounted for by an exponential term used in conjunction with Boag's equation for collection efficiency in pulsed beams. The semiempirical model follows the experimental data well and accounts for both the charge recombination as well as for the charge multiplication effects and the chamber stem effect.

Radiation-induced biologic bystander effect elicited in vitro by targeted radiopharmaceuticals labeled with alpha-, beta-, and auger electron-emitting radionuclides.

PubMed

Boyd, Marie; Ross, Susan C; Dorrens, Jennifer; Fullerton, Natasha E; Tan, Ker Wei; Zalutsky, Michael R; Mairs, Robert J

2006-06-01

Recent studies have shown that indirect effects of ionizing radiation may contribute significantly to the effectiveness of radiotherapy by sterilizing malignant cells that are not directly hit by the radiation. However, there have been few investigations of the importance of indirect effects in targeted radionuclide treatment. Our purpose was to compare the induction of bystander effects by external beam gamma-radiation with those resultant from exposure to 3 radiohaloanalogs of metaiodobenzylguanidine (MIBG): (131)I-MIBG (low-linear-energy-transfer [LET] beta-emitter), (123)I-MIBG (potentially high-LET Auger electron emitter), and meta-(211)At-astatobenzylguanidine ((211)At-MABG) (high-LET alpha-emitter). Two human tumor cell lines-UVW (glioma) and EJ138 (transitional cell carcinoma of bladder)-were transfected with the noradrenaline transporter (NAT) gene to enable active uptake of MIBG. Medium from cells that accumulated the radiopharmaceuticals or were treated with external beam radiation was transferred to cells that had not been exposed to radioactivity, and clonogenic survival was determined in donor and recipient cultures. Over the dose range 0-9 Gy of external beam radiation of donor cells, 2 Gy caused 30%-40% clonogenic cell kill in recipient cultures. This potency was maintained but not increased by higher dosage. In contrast, no corresponding saturation of bystander cell kill was observed after treatment with a range of activity concentrations of (131)I-MIBG, which resulted in up to 97% death of donor cells. Cellular uptake of (123)I-MIBG and (211)At-MABG induced increasing recipient cell kill up to levels that resulted in direct kill of 35%-70% of clonogens. Thereafter, the administration of higher activity concentrations of these high-LET emitters was inversely related to the kill of recipient cells. Over the range of activity concentrations examined, neither direct nor indirect kill was observed in cultures of cells not expressing the NAT and, thus, incapable of active uptake of MIBG. Potent toxins are generated specifically by cells that concentrate radiohalogenated MIBG. These may be LET dependent and distinct from those elicited by conventional radiotherapy.

Developments toward an 18% efficient silicon solar cell

NASA Technical Reports Server (NTRS)

Meulenberg, A., Jr.

1983-01-01

Limitations to increased open-circuit voltage were identified and experimentally verified for 0.1 ohm-cm solar cells with heavily doped emitters. After major reduction in the dark current contribution from the metal-silicon interface of the grid contacts, the surface recombination velocity of the oxide-silicon interface of shallow junction solar cells is the limiting factor. In deep junction solar cells, where the junction field does not aid surface collection, the emitter bulk is the limiting factor. Singly-diffused, shallow junction cells have been fabricated with open circuit voltages in excess of 645 mV. Double-diffusion shallow and deep junctions cells have displayed voltages above 650 mV. MIS solar cells formed on 0.1 ohm-cm substrates have exibited the lowest dark currents produced in the course of the contract work.

Nanomodulated electron beams via electron diffraction and emittance exchange for coherent x-ray generation

NASA Astrophysics Data System (ADS)

Nanni, E. A.; Graves, W. S.; Moncton, D. E.

2018-01-01

We present a new method for generation of relativistic electron beams with current modulation on the nanometer scale and below. The current modulation is produced by diffracting relativistic electrons in single crystal Si, accelerating the diffracted beam and imaging the crystal structure, then transferring the image into the temporal dimension via emittance exchange. The modulation period can be tuned by adjusting electron optics after diffraction. This tunable longitudinal modulation can have a period as short as a few angstroms, enabling production of coherent hard x-rays from a source based on inverse Compton scattering with total accelerator length of approximately ten meters. Electron beam simulations from cathode emission through diffraction, acceleration, and image formation with variable magnification are presented along with estimates of the coherent x-ray output properties.

Local bipolar-transistor gain measurement for VLSI devices

NASA Astrophysics Data System (ADS)

Bonnaud, O.; Chante, J. P.

1981-08-01

A method is proposed for measuring the gain of a bipolar transistor region as small as possible. The measurement then allows the evaluation particularly of the effect of the emitter-base junction edge and the technology-process influence of VLSI-technology devices. The technique consists in the generation of charge carriers in the transistor base layer by a focused laser beam in order to bias the device in as small a region as possible. To reduce the size of the conducting area, a transversal reverse base current is forced through the base layer resistance in order to pinch in the emitter current in the illuminated region. Transistor gain is deduced from small signal measurements. A model associated with this technique is developed, and this is in agreement with the first experimental results.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rossi, Adriana; et al.

Long-range beam-beam (LRBB) interactions can be a source of emittance growth and beam losses in the LHC during physics and will become even more relevant with the smaller '* and higher bunch intensities foreseen for the High Luminosity LHC upgrade (HL-LHC), in particular if operated without crab cavities. Both beam losses and emittance growth could be mitigated by compensat-ing the non-linear LRBB kick with a correctly placed current carrying wire. Such a compensation scheme is currently being studied in the LHC through a demonstration test using current-bearing wires embedded into col-limator jaws, installed either side of the high luminosity interactionmore » regions. For HL-LHC two options are considered, a current-bearing wire as for the demonstrator, or electron lenses, as the ideal distance between the particle beam and compensating current may be too small to allow the use of solid materials. This paper reports on the ongoing activities for both options, covering the progress of the wire-in-jaw collimators, the foreseen LRBB experiments at the LHC, and first considerations for the design of the electron lenses to ultimately replace material wires for HL-LHC.« less

Long-Term Reliability of SiGe/Si HBTs From Accelerated Lifetime Testing

NASA Technical Reports Server (NTRS)

Bhattacharya, Pallab

2001-01-01

Accelerated lifetime tests were performed on double-mesa structure Si(0.7)Ge(0.3)/Si npn heterojunction bipolar transistors, grown by molecular beam epitaxy, in the temperature range of 175 C-275 C. The transistors (with 5x20 sq micron emitter area) have DC current gains approx. 40-50 and f(sub T) and f(sub max) of up to 22 GHz and 25 GHz, respectively. It is found that a gradual degradation in these devices is caused by the recombination enhanced impurity diffusion (REID) of boron atoms from the p-type base region and the associated formation of parasitic energy barriers to electron transport from the emitter to collector layers. This REED has been quantitatively modeled and explained, to the first order of approximation, and the agreement with the measured data is good. The mean time to failure (MTTF) of these devices at room temperature under 1.35 x 10(exp 4) A/sq cm current density operation is estimated from the extrapolation of the Arrhenius plots of device lifetime versus reciprocal temperature. The results of the reliability tests offer valuable feedback for SiGe heterostructure design in order to improve the long-term reliability of the devices and circuits made with them. Hot electron induced degradation of the base-emitter junction was also observed during the accelerated lifetime testing. In order to improve the HBT reliability endangered by the hot electrons, deuterium sintered techniques have been proposed. The preliminary results from this study show that a deuterium-sintered HBT is, indeed, more resistant to hot-electron induced base-emitter junction degradation.

Generating high-brightness electron beams via ionization injection by transverse colliding lasers in a plasma-wakefield accelerator.

PubMed

Li, F; Hua, J F; Xu, X L; Zhang, C J; Yan, L X; Du, Y C; Huang, W H; Chen, H B; Tang, C X; Lu, W; Joshi, C; Mori, W B; Gu, Y Q

2013-07-05

The production of ultrabright electron bunches using ionization injection triggered by two transversely colliding laser pulses inside a beam-driven plasma wake is examined via three-dimensional particle-in-cell simulations. The relatively low intensity lasers are polarized along the wake axis and overlap with the wake for a very short time. The result is that the residual momentum of the ionized electrons in the transverse plane of the wake is reduced, and the injection is localized along the propagation axis of the wake. This minimizes both the initial thermal emittance and the emittance growth due to transverse phase mixing. Simulations show that ultrashort (~8 fs) high-current (0.4 kA) electron bunches with a normalized emittance of 8.5 and 6 nm in the two planes, respectively, and a brightness of 1.7×10(19) A rad(-2) m(-2) can be obtained for realistic parameters.

Terahertz Focusing and Polarization Control in Large-Area Bias-Free Semiconductor Emitters

NASA Astrophysics Data System (ADS)

Carthy, Joanna L.; Gow, Paul C.; Berry, Sam A.; Mills, Ben; Apostolopoulos, Vasilis

2018-03-01

We show that, when large-area multiplex terahertz semiconductor emitters, that work on diffusion currents and Schottky potentials, are illuminated by ultrashort optical pulses they can radiate a directional electromagnetic terahertz pulse which is controlled by the angular spectrum of the incident optical beam. Using the lens that focuses the incident near-infrared pulse, we have demonstrated THz emission focusing in free space, at the same point where the optical radiation would focus. We investigated the beam waist and Gouy phase shift of the THz emission as a function of frequency. We also show that the polarization profile of the emitted THz can be tailored by the metallic patterning on the semiconductor, demonstrating radial polarization when a circular emitter design is used. Our techniques can be used for fast THz beam steering and mode control for efficiently coupling to waveguides without the need for THz lenses or parabolic mirrors.

Efficient fabrication of carbon nanotube micro tip arrays by tailoring cross-stacked carbon nanotube sheets.

PubMed

Wei, Yang; Liu, Peng; Zhu, Feng; Jiang, Kaili; Li, Qunqing; Fan, Shoushan

2012-04-11

Carbon nanotube (CNT) micro tip arrays with hairpin structures on patterned silicon wafers were efficiently fabricated by tailoring the cross-stacked CNT sheet with laser. A blade-like structure was formed at the laser-cut edges of the CNT sheet. CNT field emitters, pulled out from the end of the hairpin by an adhesive tape, can provide 150 μA intrinsic emission currents with low beam noise. The nice field emission is ascribed to the Joule-heating-induced desorption of the emitter surface by the hairpin structure, the high temperature annealing effect, and the surface morphology. The CNT emitters with hairpin structures will greatly promote the applications of CNTs in vacuum electronic devices and hold the promises to be used as the hot tips for thermochemical nanolithography. More CNT-based structures and devices can be fabricated on a large scale by this versatile method. © 2012 American Chemical Society

Heralded quantum repeater based on the scattering of photons off single emitters using parametric down-conversion source.

PubMed

Song, Guo-Zhu; Wu, Fang-Zhou; Zhang, Mei; Yang, Guo-Jian

2016-06-28

Quantum repeater is the key element in quantum communication and quantum information processing. Here, we investigate the possibility of achieving a heralded quantum repeater based on the scattering of photons off single emitters in one-dimensional waveguides. We design the compact quantum circuits for nonlocal entanglement generation, entanglement swapping, and entanglement purification, and discuss the feasibility of our protocols with current experimental technology. In our scheme, we use a parametric down-conversion source instead of ideal single-photon sources to realize the heralded quantum repeater. Moreover, our protocols can turn faulty events into the detection of photon polarization, and the fidelity can reach 100% in principle. Our scheme is attractive and scalable, since it can be realized with artificial solid-state quantum systems. With developed experimental technique on controlling emitter-waveguide systems, the repeater may be very useful in long-distance quantum communication.

Heralded quantum repeater based on the scattering of photons off single emitters using parametric down-conversion source

PubMed Central

Song, Guo-Zhu; Wu, Fang-Zhou; Zhang, Mei; Yang, Guo-Jian

2016-01-01

Quantum repeater is the key element in quantum communication and quantum information processing. Here, we investigate the possibility of achieving a heralded quantum repeater based on the scattering of photons off single emitters in one-dimensional waveguides. We design the compact quantum circuits for nonlocal entanglement generation, entanglement swapping, and entanglement purification, and discuss the feasibility of our protocols with current experimental technology. In our scheme, we use a parametric down-conversion source instead of ideal single-photon sources to realize the heralded quantum repeater. Moreover, our protocols can turn faulty events into the detection of photon polarization, and the fidelity can reach 100% in principle. Our scheme is attractive and scalable, since it can be realized with artificial solid-state quantum systems. With developed experimental technique on controlling emitter-waveguide systems, the repeater may be very useful in long-distance quantum communication. PMID:27350159

Micromachined mold-type double-gated metal field emitters

NASA Astrophysics Data System (ADS)

Lee, Yongjae; Kang, Seokho; Chun, Kukjin

1997-12-01

Electron field emitters with double gates were fabricated using micromachining technology and the effect of the electric potential of the focusing gate (or second gate) was experimentally evaluated. The molybdenum field emission tip was made by filling a cusplike mold formed when a conformal film was deposited on the hole-trench that had been patterned on stacked metals and dielectric layers. The hole-trench was patterned by electron beam lithography and reactive ion etching. Each field emitter has a 0960-1317/7/4/009/img1 diameter extraction gate (or first gate) and a 0960-1317/7/4/009/img2 diameter focusing gate (or second gate). To make a path for the emitted electrons, silicon bulk was etched anisotropically in KOH and EDP (ethylene-diamine pyrocatechol) solution successively. The I - V characteristics and anode current change due to the focusing gate potential were measured.

Studies in High Current Density Ion Sources for Heavy Ion Fusion Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chacon-Golcher, Edwin

This dissertation develops diverse research on small (diameter ~ few mm), high current density (J ~ several tens of mA/cm 2) heavy ion sources. The research has been developed in the context of a programmatic interest within the Heavy Ion Fusion (HIF) Program to explore alternative architectures in the beam injection systems that use the merging of small, bright beams. An ion gun was designed and built for these experiments. Results of average current density yield () at different operating conditions are presented for K + and Cs + contact ionization sources and potassium aluminum silicate sources. Maximum valuesmore » for a K + beam of ~90 mA/cm 2 were observed in 2.3 μs pulses. Measurements of beam intensity profiles and emittances are included. Measurements of neutral particle desorption are presented at different operating conditions which lead to a better understanding of the underlying atomic diffusion processes that determine the lifetime of the emitter. Estimates of diffusion times consistent with measurements are presented, as well as estimates of maximum repetition rates achievable. Diverse studies performed on the composition and preparation of alkali aluminosilicate ion sources are also presented. In addition, this work includes preliminary work carried out exploring the viability of an argon plasma ion source and a bismuth metal vapor vacuum arc (MEVVA) ion source. For the former ion source, fast rise-times (~ 1 μs), high current densities (~ 100 mA/cm +) and low operating pressures (< 2 mtorr) were verified. For the latter, high but acceptable levels of beam emittance were measured (ε n ≤ 0.006 π· mm · mrad) although measured currents differed from the desired ones (I ~ 5mA) by about a factor of 10.« less

Silicon-Based Quantum MOS Technology Development

DTIC Science & Technology

2000-03-07

resonant interband tunnel diodes were demonstrated with peak current density greater than 104 A/cm2; peak-to-valley current ratio exceeding 2 was...photon emission reduce the peak-to-valley current ratio and device performance. Therefore, interband tunnel devices should be more resilient to...Comparison of bipolar interband tunnel and optical devices: (a) Esaki diode biased into the valley current region and (b) optical light emitter. The Esaki

High-temperature MIRAGE XL (LFRA) IRSP system development

NASA Astrophysics Data System (ADS)

McHugh, Steve; Franks, Greg; LaVeigne, Joe

2017-05-01

The development of very-large format infrared detector arrays has challenged the IR scene projector community to develop larger-format infrared emitter arrays. Many scene projector applications also require much higher simulated temperatures than can be generated with current technology. This paper will present an overview of resistive emitterbased (broadband) IR scene projector system development, as well as describe recent progress in emitter materials and pixel designs applicable for legacy MIRAGE XL Systems to achieve apparent temperatures >1000K in the MWIR. These new high temperature MIRAGE XL (LFRA) Digital Emitter Engines (DEE) will be "plug and play" equivalent with legacy MIRAGE XL DEEs, the rest of the system is reusable. Under the High Temperature Dynamic Resistive Array (HDRA) development program, Santa Barbara Infrared Inc. (SBIR) is developing a new infrared scene projector architecture capable of producing both very large format (>2k x 2k) resistive emitter arrays and improved emitter pixel technology capable of simulating very high apparent temperatures. During earlier phases of the program, SBIR demonstrated materials with MWIR apparent temperatures in excess of 1500 K. These new emitter materials can be utilized with legacy RIICs to produce pixels that can achieve 7X the radiance of the legacy systems with low cost and low risk. A 'scalable' Read-In Integrated Circuit (RIIC) is also being developed under the same HDRA program to drive the high temperature pixels. This RIIC will utilize through-silicon via (TSV) and Quilt Packaging (QP) technologies to allow seamless tiling of multiple chips to fabricate very large arrays, and thus overcome the yield limitations inherent in large-scale integrated circuits. These quilted arrays can be fabricated in any N x M size in 512 steps.

Suppression of the emittance growth induced by coherent synchrotron radiation in triple-bend achromats

NASA Astrophysics Data System (ADS)

Huang, Xi-Yang; Jiao, Yi; Xu, Gang; Cui, Xiao-Hao

2015-05-01

The coherent synchrotron radiation (CSR) effect in a bending path plays an important role in transverse emittance dilution in high-brightness light sources and linear colliders, where the electron beams are of short bunch length and high peak current. Suppression of the emittance growth induced by CSR is critical to preserve the beam quality and help improve the machine performance. It has been shown that the CSR effect in a double-bend achromat (DBA) can be analyzed with the two-dimensional point-kick analysis method. In this paper, this method is applied to analyze the CSR effect in a triple-bend achromat (TBA) with symmetric layout, which is commonly used in the optics designs of energy recovery linacs (ERLs). A condition of cancelling the CSR linear effect in such a TBA is obtained, and is verified through numerical simulations. It is demonstrated that emittance preservation can be achieved with this condition, and to a large extent, has a high tolerance to the fluctuation of the initial transverse phase space distribution of the beam. Supported by National Natural Science Foundation of China (11475202, 11405187) and Youth Innovation Promotion Association of Chinese Academy of Sciences (2015009)

Xenon gas field ion source from a single-atom tip

NASA Astrophysics Data System (ADS)

Lai, Wei-Chiao; Lin, Chun-Yueh; Chang, Wei-Tse; Li, Po-Chang; Fu, Tsu-Yi; Chang, Chia-Seng; Tsong, T. T.; Hwang, Ing-Shouh

2017-06-01

Focused ion beam (FIB) systems have become powerful diagnostic and modification tools for nanoscience and nanotechnology. Gas field ion sources (GFISs) built from atomic-size emitters offer the highest brightness among all ion sources and thus can improve the spatial resolution of FIB systems. Here we show that the Ir/W(111) single-atom tip (SAT) can emit high-brightness Xe+ ion beams with a high current stability. The ion emission current versus extraction voltage was analyzed from 150 K up to 309 K. The optimal emitter temperature for maximum Xe+ ion emission was ˜150 K and the reduced brightness at the Xe gas pressure of 1 × 10-4 torr is two to three orders of magnitude higher than that of a Ga liquid metal ion source, and four to five orders of magnitude higher than that of a Xe inductively coupled plasma ion source. Most surprisingly, the SAT emitter remained stable even when operated at 309 K. Even though the ion current decreased with increasing temperature, the current at room temperature (RT) could still reach over 1 pA when the gas pressure was higher than 1 × 10-3 torr, indicating the feasibility of RT-Xe-GFIS for application to FIB systems. The operation temperature of Xe-SAT-GFIS is considerably higher than the cryogenic temperature required for the helium ion microscope (HIM), which offers great technical advantages because only simple or no cooling schemes can be adopted. Thus, Xe-GFIS-FIB would be easy to implement and may become a powerful tool for nanoscale milling and secondary ion mass spectroscopy.

Highly reliable 637-639 nm red high-power LDs for displays

NASA Astrophysics Data System (ADS)

Nishida, Takehiro; Shimada, Naoyuki; Ono, Kenichi; Yagi, Tetsuya; Shima, Akihiro

2010-02-01

Higher power laser diodes (LDs) with a wavelength of 637-639nm are strongly demanded as a light source of display applications because luminosity factor of laser light is relatively high. In order to realize reliable high power operation, we have optimized LD structure, focusing on improvement of power saturation and sudden degradation. As a result, 40μm-wide broad-area (BA) LDs with window-mirror structure have been designed. We fabricated two kinds of single emitter LDs of 1.0mm cavity and 1.5mm cavity. The single LD is installed in conventional φ5.6 mm TO-CAN package. The 1.0mm LD showed very high wall plug efficiency (WPE) of 33% at 25 ºC (23% at 45 ºC) in the power range of around 300mW (30 lm). High output power of 600mW (60 lm) is realized by the 1.5mm LD. Both LDs have operated for over 1,000 hours without any degradation. Estimated mean time to failure (MTTF) is 10,000 hours. In addition, we fabricated an array LD consisting of 20 emitters (BA-LD structure), which shows reliable CW operation of 8W (at junction temperature of 50 ºC) for 10,000 hours.

Development of a Robust, High Current, Low Power Field Emission Electron Gun for a Spaceflight Reflectron Time-of-Flight Mass Spectrometer

NASA Technical Reports Server (NTRS)

Southard, Adrian E.; Getty, Stephanie A.; Feng, Steven; Glavin, Daniel P.; Auciello, Orlando; Sumant, Anirudha

2012-01-01

Carbon materials, including carbon nanotubes (CNTs) and nitrogen-incorporated ultrananocrystalline diamond (N-UNCD), have been of considerable interest for field emission applications for over a decade. In particular, robust field emission materials are compelling for space applications due to the low power consumption and potential for miniaturization. A reflectron time-of-flight mass spectrometer (TOF-MS) under development for in situ measurements on the Moon and other Solar System bodies uses a field emitter to generate ions from gaseous samples, using electron ionization. For these unusual environments, robustness, reliability, and long life are of paramount importance, and to this end, we have explored the field emission properties and lifetime of carbon nanotubes and nitrogen-incorporated ultrananocrystalline diamond (N-UNCD) thin films, the latter developed and patented by Argonne National Laboratory. We will present recent investigations of N-UNCD as a robust field emitter, revealing that this material offers stable performance in high vacuum for up to 1000 hours with threshold voltage for emission of about 3-4 V/lJm and current densities in the range of tens of microA. Optimizing the mass resolution and sensitivity of such a mass spectrometer has also been enabled by a parallel effort to scale up a CNT emitter to an array measuring 2 mm x 40 mm. Through simulation and experiment of the new extended format emitter, we have determined that focusing the electron beam is limited due to the angular spread of the emitted electrons. This dispersion effect can be reduced through modification of the electron gun geometry, but this reduces the current reaching the ionization region. By increasing the transmission efficiency of the electron beam to the anode, we have increased the anode current by two orders of magnitude to realize a corresponding enhancement in instrument sensitivity, at a moderate cost to mass resolution. We will report recent experimental and modeling results to describe the performance of a field emission electron gun as employed in the Volatile Analysis by Pyrolysis of Regolith (VAPoR) TOF-MS prototype.

Control of electrochemical reactions at the capillary electrophoresis outlet/electrospray emitter electrode under CE/ESI-MS through the application of redox buffers.

PubMed

Smith, A D; Moini, M

2001-01-15

It was found that combining capillary electrophoresis (CE) and electrospray ionization mass spectrometry (ESI-MS) overlays two controlled current techniques to form a three-electrode system (CE inlet, CE outlet/ES emitter, and MS inlet electrodes) in which the CE outlet electrode and the ES emitter electrode were shared between the CE and the ESI-MS circuits. Depending on the polarities and magnitudes of the voltages at the CE inlet, CE outlet/ES emitter, and MS inlet electrodes, the nature of the two redox reactions at the shared electrode was the same or different (both reduction, both oxidation, or one oxidation and the other reduction). Several redox buffers were introduced for controlling electrochemical reactions at the shared electrode. By reacting at this electrode, redox buffers were able to maintain electrode potentials below the onset of water electrolysis, thereby eliminating gas bubble formation and/or pH drift. The volume of the gas generated due to water electrolysis was used to quantitate water oxidation or reduction at this electrode. Two types of redox buffers were used. A reactive electrode with an oxidation potential below that of water was used as the electrode under anodic conditions. Also, a reactive compound with a redox potential below that of water was added to the CE and/or ESI running buffer. When the shared electrode was the anode of both CE and ESI-MS circuits, the use of iron or etched and sanded stainless steel (ss) wire, instead of platinum wire, suppressed bubble formation at the shared electrode. Under these conditions, corrosion of the Fe wire and formation of Fe2+ replaced oxidation of water, eliminating O2 gas bubble and H+ formation. When mixtures of peptides were analyzed, iron adducts of peptides were observed. For a fresh wire, however, the intensities of adduct ions were less than 3% of the protonated molecules. After a few days of operation, the intensities of the adduct ions increased to approximately 50%, due to rust formation on the Fe wire. On-column rinsing with a 40% solution of citric acid rejuvenated the Fe wire and reduced the adduct peak intensities to less than 3%. Unmodified ss wire did not quench bubble formation, which was attributed to its passivated surface. When Fe, ss, and Pt wires were used as the shared electrode under forward polarity CE and positive ESI mode, where the shared electrode acted as a cathode with respect to CE inlet and as an anode with respect to MS inlet, reduction of water at the cathodic end of the electrode and, in the case of ss and Pt wires, oxidation of water at the anodic end of the shared electrode produced a significant amount of bubbles. Under these conditions, however, a buffer containing 50 mM p-benzoquinone completely suppressed both cathodic reduction and anodic oxidation of water for CE currents up to 4 microA. Reduction of p-benzoquinone at the cathodic end of the shared electrode to hydroquinone, and oxidation of this hydroquinone at the anodic end of the electrode, replaced reduction and oxidation of water, eliminating bubble formation. A 0.1% acetic acid solution saturated with I2 was also found to suppress bubble formation at the cathode for CE currents up to 3 microA; however, strong iodine adduct ions were observed under CE/ESI-MS when a mixture of peptides was analyzed. The application of iron as an in-capillary electrode for the analysis of a peptide mixture and a protein digest demonstrated a high separation efficiency similar to when hydroquinone was used as a redox buffer.

Study of phase-locked diode laser array and DFB/DBR surface emitting laser diode

NASA Astrophysics Data System (ADS)

Hsin, Wei

New types of phased-array and surface-emitting lasers are designed. The importance and approaches (or structures) of different phased array and surface emitting laser diodes are reviewed. The following are described: (1) a large optical cavity channel substrate planar laser array with layer thickness chirping; (2) a vertical cavity surface emitter with distributed feedback (DFB) optical cavity and a transverse junction buried heterostructure; (3) a microcavity distributed Bragg reflector (DBR) surface emitter; and (4) two surface emitting laser structures which utilized lateral current injection schemes to overcome the problems occurring in the vertical injection scheme.

Novel Infrared Phototransistors for Atmospheric CO2 Profiling at 2 microns Wavelength

NASA Technical Reports Server (NTRS)

Refaat, Tamer F.; Abedin, M. Nurul; Sulima, Oleg V.; Singh, Upendra N.; Ismail, Syed

2004-01-01

Two-micron detectors are critical for atmospheric carbon dioxide profiling using the lidar technique. The characterization results of a novel infrared AlGaAsSb/ InGaAsSb phototransistor are reported. Emitter dark current variation with the collector-emitter voltage at different temperatures is acquired to examine the gain mechanism. Spectral response measurements resulted in responsivity as high as 2650 A/W at 2.05 microns wavelength. Bias voltage and temperature effects on the device responsivity are presented. The detectivity of this device is compared to InGaAs and HgCdTe devices.

Novel Infrared Phototransistors for Atmospheric CO2 Profiling at 2 Micron Wavelength

NASA Technical Reports Server (NTRS)

Refaat, Tamer F.; Abedin, M. Nurul; Sulima, Oleg V.; Singh, Upendra N.; Ismail, Syed

2004-01-01

Two-micron detectors are critical for atmospheric carbon dioxide profiling using the lidar technique. The characterization results of a novel infrared AlGaAsSb/ InGaAsSb phototransistor are reported. Emitter dark current variation with the collector-emitter voltage at different temperatures is acquired to examine the gain mechanism. Spectral response measurements resulted in responsivity as high as 2650 A/W at 2.05 m wavelength. Bias voltage and temperature effects on the device responsivity are presented. The detectivity of this device is compared to InGaAs and HgCdTe devices.

Annual Progress Report of Research Activities that Occured in the Coordinated Science Laboratory for July 1, 1982 through Jun 30, 1983,

DTIC Science & Technology

1983-08-01

particular fabrication concerns, both the emitter and collector region were made of Al„ -Ga0 5As wide gap material. Devices with emitter area of 10 x 60...im and collector area of 50 x 60 (im exhi- bited current gains of 500 for a base doping of 10 cm and thickness of 500 A, and 1700 for a base...spreading over a large enough distance, it is usually necessary to heat the surface to a temperature at which not just diffusion, but also

Method of determining interwell oil field fluid saturation distribution

DOEpatents

Donaldson, Erle C.; Sutterfield, F. Dexter

1981-01-01

A method of determining the oil and brine saturation distribution in an oil field by taking electrical current and potential measurements among a plurality of open-hole wells geometrically distributed throughout the oil field. Poisson's equation is utilized to develop fluid saturation distributions from the electrical current and potential measurement. Both signal generating equipment and chemical means are used to develop current flow among the several open-hole wells.

Monolithic multinozzle emitters for nanoelectrospray mass spectrometry

DOEpatents

Wang, Daojing [Daly City, CA; Yang, Peidong [Kensington, CA; Kim, Woong [Seoul, KR; Fan, Rong [Pasadena, CA

2011-09-20

Novel and significantly simplified procedures for fabrication of fully integrated nanoelectrospray emitters have been described. For nanofabricated monolithic multinozzle emitters (NM.sup.2 emitters), a bottom up approach using silicon nanowires on a silicon sliver is used. For microfabricated monolithic multinozzle emitters (M.sup.3 emitters), a top down approach using MEMS techniques on silicon wafers is used. The emitters have performance comparable to that of commercially-available silica capillary emitters for nanoelectrospray mass spectrometry.

Asymmetrical field emitter

DOEpatents

Fleming, J.G.; Smith, B.K.

1995-10-10

A method is disclosed for providing a field emitter with an asymmetrical emitter structure having a very sharp tip in close proximity to its gate. One preferred embodiment of the present invention includes an asymmetrical emitter and a gate. The emitter having a tip and a side is coupled to a substrate. The gate is connected to a step in the substrate. The step has a top surface and a side wall that is substantially parallel to the side of the emitter. The tip of the emitter is in close proximity to the gate. The emitter is at an emitter potential, and the gate is at a gate potential such that with the two potentials at appropriate values, electrons are emitted from the emitter. In one embodiment, the gate is separated from the emitter by an oxide layer, and the emitter is etched anisotropically to form its tip and its asymmetrical structure. 17 figs.

Top-gated chemical vapor deposition grown graphene transistors with current saturation.

PubMed

Bai, Jingwei; Liao, Lei; Zhou, Hailong; Cheng, Rui; Liu, Lixin; Huang, Yu; Duan, Xiangfeng

2011-06-08

Graphene transistors are of considerable interest for radio frequency (rf) applications. In general, transistors with large transconductance and drain current saturation are desirable for rf performance, which is however nontrivial to achieve in graphene transistors. Here we report high-performance top-gated graphene transistors based on chemical vapor deposition (CVD) grown graphene with large transconductance and drain current saturation. The graphene transistors were fabricated with evaporated high dielectric constant material (HfO(2)) as the top-gate dielectrics. Length scaling studies of the transistors with channel length from 5.6 μm to 100 nm show that complete current saturation can be achieved in 5.6 μm devices and the saturation characteristics degrade as the channel length shrinks down to the 100-300 nm regime. The drain current saturation was primarily attributed to drain bias induced shift of the Dirac points. With the selective deposition of HfO(2) gate dielectrics, we have further demonstrated a simple scheme to realize a 300 nm channel length graphene transistors with self-aligned source-drain electrodes to achieve the highest transconductance of 250 μS/μm reported in CVD graphene to date.

Nanomodulated electron beams via electron diffraction and emittance exchange for coherent x-ray generation

DOE PAGES

Nanni, E. A.; Graves, W. S.; Moncton, D. E.

2018-01-19

We present a new method for generation of relativistic electron beams with current modulation on the nanometer scale and below. The current modulation is produced by diffracting relativistic electrons in single crystal Si, accelerating the diffracted beam and imaging the crystal structure, then transferring the image into the temporal dimension via emittance exchange. The modulation period can be tuned by adjusting electron optics after diffraction. This tunable longitudinal modulation can have a period as short as a few angstroms, enabling production of coherent hard x-rays from a source based on inverse Compton scattering with total accelerator length of approximately tenmore » meters. Electron beam simulations from cathode emission through diffraction, acceleration, and image formation with variable magnification are presented along with estimates of the coherent x-ray output properties.« less

Radiative damping and synchronization in a graphene-based terahertz emitter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moskalenko, A. S., E-mail: andrey.moskalenko@physik.uni-augsburg.de; Mikhailov, S. A., E-mail: sergey.mikhailov@physik.uni-augsburg.de

2014-05-28

We investigate the collective electron dynamics in a recently proposed graphene-based terahertz emitter under the influence of the radiative damping effect, which is included self-consistently in a molecular dynamics approach. We show that under appropriate conditions synchronization of the dynamics of single electrons takes place, leading to a rise of the oscillating component of the charge current. The synchronization time depends dramatically on the applied dc electric field and electron scattering rate and is roughly inversely proportional to the radiative damping rate that is determined by the carrier concentration and the geometrical parameters of the device. The emission spectra inmore » the synchronized state, determined by the oscillating current component, are analyzed. The effective generation of higher harmonics for large values of the radiative damping strength is demonstrated.« less

UNDULATOR-BASED LASER WAKEFIELD ACCELERATOR ELECTRON BEAM DIAGNOSTIC

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bakeman, M.S.; Fawley, W.M.; Leemans, W. P.

to couple the THUNDER undulator to the LOASIS Lawrence Berkeley National Laboratory (LBNL) laser wakefield accelerator (LWFA). Currently the LWFA has achieved quasi-monoenergetic electron beams with energies up to 1 GeV. These ultra-short, high-peak-current, electron beams are ideal for driving a compact XUV free electron laser (FEL). Understanding the electron beam properties such as the energy spread and emittance is critical for achieving high quality light sources with high brightness. By using an insertion device such as an undulator and observing changes in the spontaneous emission spectrum, the electron beam energy spread and emittance can be measured with high precision.more » The initial experiments will use spontaneous emission from 1.5 m of undulator. Later experiments will use up to 5 m of undulator with a goal of a high gain, XUV FEL.« less

Nanomodulated electron beams via electron diffraction and emittance exchange for coherent x-ray generation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nanni, E. A.; Graves, W. S.; Moncton, D. E.

We present a new method for generation of relativistic electron beams with current modulation on the nanometer scale and below. The current modulation is produced by diffracting relativistic electrons in single crystal Si, accelerating the diffracted beam and imaging the crystal structure, then transferring the image into the temporal dimension via emittance exchange. The modulation period can be tuned by adjusting electron optics after diffraction. This tunable longitudinal modulation can have a period as short as a few angstroms, enabling production of coherent hard x-rays from a source based on inverse Compton scattering with total accelerator length of approximately tenmore » meters. Electron beam simulations from cathode emission through diffraction, acceleration, and image formation with variable magnification are presented along with estimates of the coherent x-ray output properties.« less

Computer acquired performance data from an etched-rhenium, molybdenum planar diode

NASA Technical Reports Server (NTRS)

Manista, E. J.

1972-01-01

Performance data from an etched-rhenium, molybdenum thermionic converter are presented. The planar converter has a guard-ringed collector and a fixed spacing of 0.254 mm (10 mils). The data were acquired by using a computer and are available on microfiche as individual or composite parametric current, voltage curves. The parameters are the temperatures of the emitter T sub E, collector T sub C and cesium reservoir T sub R. The composite plots have constant T sub E, and varying T sub C or T sub R, or both. The envelope and composite plots having constant I sub E are presented. The diode was tested at increments between 1500 and 2000 K for the emitter, 750 and 1100 K for the collector, and 540 and 640 K for the reservoir. In all, 774 individual current, voltage curves were obtained.

A study of junction effect transistors and their roles in carbon nanotube field emission cathodes in compact pulsed power applications

NASA Astrophysics Data System (ADS)

Shui, Qiong

This thesis is focusing on a study of junction effect transistors (JFETs) in compact pulsed power applications. Pulsed power usually requires switches with high hold-off voltage, high current, low forward voltage drop, and fast switching speed. 4H-SiC, with a bandgap of 3.26 eV (The bandgap of Si is 1.12eV) and other physical and electrical superior properties, has gained much attention in high power, high temperature and high frequency applications. One topic of this thesis is to evaluate if 4H-SiC JFETs have a potential to replace gas phase switches to make pulsed power system compact and portable. Some other pulsed power applications require cathodes of providing stable, uniform, high electron-beam current. So the other topic of this research is to evaluate if Si JFET-controlled carbon nanotube field emitter cold cathode will provide the necessary e-beam source. In the topic of "4H-SiC JFETs", it focuses on the design and simulation of a novel 4H-SiC normally-off VJFET with high breakdown voltage using the 2-D simulator ATLAS. To ensure realistic simulations, we utilized reasonable physical models and the established parameters as the input into these models. The influence of key design parameters were investigated which would extend pulsed power limitations. After optimizing the key design parameters, with a 50-mum drift region, the predicted breakdown voltage for the VJFET is above 8kV at a leakage current of 1x10-5A/cm2 . The specific on-state resistance is 35 mO·cm 2 at VGS = 2.7 V, and the switching speed is several ns. The simulation results suggest that the 4H-SiC VJFET is a potential candidate for improving switching performance in repetitive pulsed power applications. To evaluate the 4H-SiC VJFETs in pulsed power circuits, we extracted some circuit model parameters from the simulated I-V curves. Those parameters are necessary for circuit simulation program such as SPICE. This method could be used as a test bench without fabricating the devices to minimize the unnecessary cost. As an extended research of 4H-SiC devices, Metal-Insulator-SiC (MIS) structures were utilized to evaluate the high dielectric constant materials---TiO 2 and Al2O3, as possible gate dielectrics for SiC devices. TiO2 and Al2O3 were chosen because of their high dielectric constants and bandgap energies as well as the acceptance of Ti and Al in most modern CMOS fabrication facilities. MIS devices were fabricated and both their I-V and C-V characteristics were measured and discussed. Our research showed that Al2O3 deposited by e-beam evaporation could be considered as a promising material among the gate insulators for high power SiC devices. In the topic of "Si JFET-controlled carbon nanotube field emitter cathode arrays", stability, controllability and lifetime are the main issues waiting to be addressed before field emitters find their wide applications. The ideas of connecting Si or metal field emitters with external MOSFETs or built-in active devices were attempted by other researchers, and those devices showed effectiveness in controlling and stabilizing the emission current. We presented the design, simulation, and the fabrication of Si JFETs monolithically integrated with CNTs field emitters. The Si JFET was designed to control and improve the emission of carbon nanotube field emitter arrays. Its electrical characteristics were simulated by the device simulator ATLAS. The fabrication process was developed to be compatible with the last step of growing multiwalled carbon nanotubes at 700°C. Carbon nanotubes field emitters were grown by PECVD (Plasma Enhanced Chemical Vapor Deposition). Preliminary field emission tests were conducted with 50 x 50 emitter arrays, with a resultant emission current of 3 muA (˜40 mA/cm2) at an extraction gate voltage of 50 V and an anode voltage of 300 V. Experimental data shows the linear relationship between ln(I/V2) and l/V consistent with Fowler-Nordheim electron tunneling. Some challenging issues were also discussed.

Modeling Longitudinal Dynamics in the Fermilab Booster Synchrotron

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ostiguy, Jean-Francois; Bhat, Chandra; Lebedev, Valeri

2016-06-01

The PIP-II project will replace the existing 400 MeV linac with a new, CW-capable, 800 MeV superconducting one. With respect to current operations, a 50% increase in beam intensity in the rapid cycling Booster synchrotron is expected. Booster batches are combined in the Recycler ring; this process limits the allowed longitudinal emittance of the extracted Booster beam. To suppress eddy currents, the Booster has no beam pipe; magnets are evacuated, exposing the beam to core laminations and this has a substantial impact on the longitudinal impedance. Noticeable longitudinal emittance growth is already observed at transition crossing. Operation at higher intensitymore » will likely necessitate mitigation measures. We describe systematic efforts to construct a predictive model for current operating conditions. A longitudinal only code including a laminated wall impedance model, space charge effects, and feedback loops is developed. Parameter validation is performed using detailed measurements of relevant beam, rf and control parameters. An attempt is made to benchmark the code at operationally favorable machine settings.« less

Trak Investigation of Focusing Electrode Geometries for the DARHT Axis-I Diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kallas, Nicholas Dimitrious

2017-05-15

An investigation was carried out on the effects of different cathode shroud geometries of the DARHT Axis-1 diode using the Trak ray tracing software. Pierce angles of 20, 30, 45, 60, and 67.5 degrees were investigated. For each geometry the current density with respect to radial position will be presented as it evolves in the longitudinal direction. In addition the emittances for each geometry are compared and this information is used to determine the optimal geometry from the selected angles. These results are compared to the baseline geometry currently employed at DARHT of a simple 2.5mm recessed velvet cathode. Ofmore » the selected angles it was found that 45 degrees produced the lowest normalized emittance value, whereas 60 degrees produced the most uniform current density profile at 1cm away from the emission surface. For the purpose of this investigation the effects of the bucking coil and solenoid around the hollow anode of the DARHT Axis I injector are neglected.« less

Studies on space charge neutralization and emittance measurement of beam from microwave ion source.

PubMed

Misra, Anuraag; Goswami, A; Sing Babu, P; Srivastava, S; Pandit, V S

2015-11-01

A 2.45 GHz microwave ion source together with a beam transport system has been developed at VECC to study the problems related with the injection of high current beam into a compact cyclotron. This paper presents the results of beam profile measurement of high current proton beam at different degrees of space charge neutralisation with the introduction of neon gas in the beam line using a fine leak valve. The beam profiles have been measured at different pressures in the beam line by capturing the residual gas fluorescence using a CCD camera. It has been found that with space charge compensation at the present current level (∼5 mA at 75 keV), it is possible to reduce the beam spot size by ∼34%. We have measured the variation of beam profile as a function of the current in the solenoid magnet under the neutralised condition and used these data to estimate the rms emittance of the beam. Simulations performed using equivalent Kapchinsky-Vladimirsky beam envelope equations with space charge neutralization factor are also presented to interpret the experimental results.

Studies on space charge neutralization and emittance measurement of beam from microwave ion source

NASA Astrophysics Data System (ADS)

Misra, Anuraag; Goswami, A.; Sing Babu, P.; Srivastava, S.; Pandit, V. S.

2015-11-01

A 2.45 GHz microwave ion source together with a beam transport system has been developed at VECC to study the problems related with the injection of high current beam into a compact cyclotron. This paper presents the results of beam profile measurement of high current proton beam at different degrees of space charge neutralisation with the introduction of neon gas in the beam line using a fine leak valve. The beam profiles have been measured at different pressures in the beam line by capturing the residual gas fluorescence using a CCD camera. It has been found that with space charge compensation at the present current level (˜5 mA at 75 keV), it is possible to reduce the beam spot size by ˜34%. We have measured the variation of beam profile as a function of the current in the solenoid magnet under the neutralised condition and used these data to estimate the rms emittance of the beam. Simulations performed using equivalent Kapchinsky-Vladimirsky beam envelope equations with space charge neutralization factor are also presented to interpret the experimental results.

Interdigitated photovoltaic power conversion device

DOEpatents

Ward, James Scott; Wanlass, Mark Woodbury; Gessert, Timothy Arthur

1999-01-01

A photovoltaic power conversion device has a top surface adapted to receive impinging radiation. The device includes at least two adjacent, serially connected cells. Each cell includes a semi-insulating substrate and a lateral conductivity layer of a first doped electrical conductivity disposed on the substrate. A base layer is disposed on the lateral conductivity layer and has the same electrical charge conductivity thereof. An emitter layer of a second doped electrical conductivity of opposite electrical charge is disposed on the base layer and forms a p-n junction therebetween. A plurality of spaced channels are formed in the emitter and base layers to expose the lateral conductivity layer at the bottoms thereof. A front contact grid is positioned on the top surface of the emitter layer of each cell. A first current collector is positioned along one outside edge of at least one first cell. A back contact grid is positioned in the channels at the top surface of the device for engagement with the lateral conductivity layer. A second current collector is positioned along at least one outside edge of at least one oppositely disposed second cell. Finally, an interdigitation mechanism is provided for serially connecting the front contact grid of one cell to the back contact grid of an adjacent cell at the top surface of the device.

Interdigitated photovoltaic power conversion device

DOEpatents

Ward, J.S.; Wanlass, M.W.; Gessert, T.A.

1999-04-27

A photovoltaic power conversion device has a top surface adapted to receive impinging radiation. The device includes at least two adjacent, serially connected cells. Each cell includes a semi-insulating substrate and a lateral conductivity layer of a first doped electrical conductivity disposed on the substrate. A base layer is disposed on the lateral conductivity layer and has the same electrical charge conductivity thereof. An emitter layer of a second doped electrical conductivity of opposite electrical charge is disposed on the base layer and forms a p-n junction therebetween. A plurality of spaced channels are formed in the emitter and base layers to expose the lateral conductivity layer at the bottoms thereof. A front contact grid is positioned on the top surface of the emitter layer of each cell. A first current collector is positioned along one outside edge of at least one first cell. A back contact grid is positioned in the channels at the top surface of the device for engagement with the lateral conductivity layer. A second current collector is positioned along at least one outside edge of at least one oppositely disposed second cell. Finally, an interdigitation mechanism is provided for serially connecting the front contact grid of one cell to the back contact grid of an adjacent cell at the top surface of the device. 15 figs.

Vacuum microelectronics for beam power and rectennas

NASA Technical Reports Server (NTRS)

Gray, Henry F.

1989-01-01

Vacuum Microelectronic devices can be described as vacuum transistors or micro-miniature vacuum tubes, as one chooses. The fundamental reason behind this new technology is the very large current densities available from field emitters, namely as high as 10(8) A/sq cm. Array current densities as high as 1000 A/sq cm have been measured. Total electron transit times from source to drain for 1 micron feature size devices have been predicted to be about 150fs. This very short transit time implies the possibility of submillimeter wave transmitters and rectennas in devices which can operate with reasonably high voltages and which are small in size and are lightweight. In addition, they are expected to be extremely radiation hard and very temperature insensitive. That is, they are expected to have radiation hardness characteristics similar to vacuum tubes, and both the high temperature and low temperature limits should be determined by the package. That is, there should be no practical intrinsic temperature or carrier freezeout problems for devices based on metals or composites. But the technology is difficult to implement at the present time because it is based on 300 to 500 angstrom radius field emitters which must be relatively uniform. There is also the need to understand the non-equilibrium transport physics in the near-surface regions of the field emitters.

Dose rate constants for the quantity Hp(3) for frequently used radionuclides in nuclear medicine.

PubMed

Szermerski, Bastian; Bruchmann, Iris; Behrens, Rolf; Geworski, Lilli

2016-12-01

According to recent studies, the human eye lens is more sensitive to ionising radiation than previously assumed. Therefore, the dose limit for personnel occupationally exposed to ionising radiation will be lowered from currently 150 mSv to 20 mSv per year. Currently, no data base for a reliable estimation of the dose to the lens of the eye is available for nuclear medicine. Furthermore, the dose is usually not monitored. The aim of this work was to determine dose rate constants for the quantity H p (3), which is supposed to estimate the dose to the lens of the eye. For this, H p (3)-dosemeters were fixed to an Alderson Phantom at different positions. The dosemeters were exposed to radiation from nuclides typically used in nuclear medicine in their geometries analog to their application in nuclear medicine, e.g. syringe or vial. The results show that the handling of high-energy beta (i.e. electron or positron) emitters may lead to a relevant dose to the lens of the eye. For low-energy beta emitters and gamma emitters, an exceeding of the lowered dose limit seems to be unlikely. Copyright © 2015. Published by Elsevier GmbH.

Winter fluxes of CO2 and CH4 from subalpine soils in Rocky Mountain National Park, Colorado

USGS Publications Warehouse

Mast, M. Alisa; Wickland, Kimberly P.; Striegl, Robert G.; Clow, David W.

1998-01-01

Fluxes of CO2 and CH4 through a seasonal snowpack were measured in and adjacent to a subalpine wetland in Rocky Mountain National Park, Colorado. Gas diffusion through the snow was controlled by gas production or consumption in the soil and by physical snowpack properties. The snowpack insulated soils from cold midwinter air temperatures allowing microbial activity to continue through the winter. All soil types studied were net sources of CO2 to the atmosphere through the winter, whereas saturated soils in the wetland center were net emitters of CH4 and soils adjacent to the wetland were net CH4 consumers. Most sites showed similar temporal patterns in winter gas fluxes; the lowest fluxes occurred in early winter, and maximum fluxes occurred at the onset of snowmelt. Temporal changes in fluxes probably were related to changes in soil-moisture conditions and hydrology because soil temperatures were relatively constant under the snowpack. Average winter CO2 fluxes were 42.3, 31.2, and 14.6 mmol m−2 d−1 over dry, moist, and saturated soils, respectively, which accounted for 8 to 23% of the gross annual CO2emissions from these soils. Average winter CH4 fluxes were −0.016, 0.274, and 2.87 mmol m−2 d−1over dry, moist, and saturated soils, respectively. Microbial activity under snow cover accounted for 12% of the annual CH4 consumption in dry soils and 58 and 12% of the annual CH4 emitted from moist and saturated soils, respectively. The observed ranges in CO2 and CH4 flux through snow indicated that winter fluxes are an important part of the annual carbon budget in seasonally snow-covered terrains.

Reappraisal of solid selective emitters

NASA Technical Reports Server (NTRS)

Chubb, Donald L.

1990-01-01

New rare earth oxide emitters show greater efficiency than previous emitters. As a result, based on a simple model the efficiency of these emitters was calculated. Results indicate that the emission band of the selective emitter must be at relatively low energy (less than or equal to .52 eV) to obtain maximum efficiency at moderate emitter temperatures (less than or equal to 1500 K). Thus low bandgap energy PV materials are required to obtain an efficient thermophotovoltaic (TPV) system. Of the 4 specific rare earths (Nd, Ho, Er, Yb) studied Ho has the largest efficiency at moderate temperatures (72 percent at 1500 K). A comparison was made between a selective emitter TPV system and a TPV system that uses a thermal emitter plus a band pass filter to make the thermal emitter behave like a selective emitter. Results of the comparison indicate that only for very optimistic filter and thermal emitter properties will the filter TPV system have a greater efficiency than the selective emitter system.

Rare Earth Garnet Selective Emitter

NASA Technical Reports Server (NTRS)

Lowe, Roland A.; Chubb, Donald L.; Farmer, Serene C.; Good, Brian S.

1994-01-01

Thin film Ho-YAG and Er-YAG emitters with a platinum substrate exhibit high spectral emittance in the emission band (epsilon(sub lambda) approx. = 0.75, sup 4)|(sub 15/2) - (sup 4)|(sub 13/2),for Er-YAG and epsilon(sub lambda) approx. = 0.65, (sup 5)|(sub 7) - (sup 5)|(sub 8) for Ho-YAG) at 1500 K. In addition, low out-of-band spectral emittance, epsilon(sub lambda) less than 0.2, suggest these materials would be excellent candidates for high efficiency selective emitters in thermophotovoltaic (TPV) systems operating at moderate temperatures (1200-1500 K). Spectral emittance measurements of the thin films were made (1.2 less than lambda less than 3.0 microns) and compared to the theoretical emittances calculated using measured values of the spectral extinction coefficient. In this paper we present the results for a new class of rare earth ion selective emitters. These emitters are thin sections (less than 1 mm) of yttrium aluminum garnet (YAG) single crystal with a rare earth substitutional impurity. Selective emitters in the near IR are of special interest for thermophotovoltaic (TPV) energy conversion. The most promising solid selective emitters for use in a TPV system are rare earth oxides. Early spectral emittance work on rare earth oxides showed strong emission bands in the infrared (0.9 - 3 microns). However, the emittance outside the emission band was also significant and the efficiency of these emitters was low. Recent improvements in efficiency have been made with emitters fabricated from fine (5 - 10 microns) rare earth oxide fibers similar to the Welsbach mantle used in gas lanterns. However, the rare earth garnet emitters are more rugged than the mantle type emitters. A thin film selective emitter on a low emissivity substrate such as gold, platinum etc., is rugged and easily adapted to a wide variety of thermal sources. The garnet structure and its many subgroups have been successfully used as hosts for rare earth ions, introduced as substitutional impurities, in the development of solid state laser crystals. Doping, dependent on the particular ion and crystal structure, may be as high as 100 at. % (complete substitution of yttrium ion with the rare earth ion). These materials have high melting points, 1940 C for YAG (Yttrium Aluminum Garnet), and low emissivity in the near infrared making them excellent candidates for a thin film selective emitter. As previously stated, the spectral emittance of a rare earth emitter is characterized by one or more well defined emission bands. Outside the emission band the emittance(absorptance) is much lower. Therefore, it is expected that emission outside the band for a thin film selective emitter will be dominated by the emitter substrate. For an efficient emitter (power in the emission band/total emitted power) the substrate must have low emittance, epsilon(sub S). This paper presents normal spectral emittance, epsilon(sub lambda), measurements of holmium(Ho) and erbium (Er) doped YAG thin film selective emitters at (1500 K), and compares those results with the theoretical spectral emittance.

An overview of negative hydrogen ion sources for accelerators

NASA Astrophysics Data System (ADS)

Faircloth, Dan; Lawrie, Scott

2018-02-01

An overview of high current (>1 mA) negative hydrogen ion (H-) sources that are currently used on particle accelerators. The current understanding of how H- ions are produced is summarised. Issues relating to caesium usage are explored. The different ways of expressing emittance and beam currents are clarified. Source technology naming conventions are defined and generalised descriptions of each source technology are provided. Examples of currently operating sources are outlined, with their current status and future outlook given. A comparative table is provided.

Group-III Nitride Field Emitters

NASA Technical Reports Server (NTRS)

Bensaoula, Abdelhak; Berishev, Igor

2008-01-01

Field-emission devices (cold cathodes) having low electron affinities can be fabricated through lattice-mismatched epitaxial growth of nitrides of elements from group III of the periodic table. Field emission of electrons from solid surfaces is typically utilized in vacuum microelectronic devices, including some display devices. The present field-emission devices and the method of fabricating them were developed to satisfy needs to reduce the cost of fabricating field emitters, make them compatible with established techniques for deposition of and on silicon, and enable monolithic integration of field emitters with silicon-based driving circuitry. In fabricating a device of this type, one deposits a nitride of one or more group-III elements on a substrate of (111) silicon or other suitable material. One example of a suitable deposition process is chemical vapor deposition in a reactor that contains plasma generated by use of electron cyclotron resonance. Under properly chosen growth conditions, the large mismatch between the crystal lattices of the substrate and the nitride causes strains to accumulate in the growing nitride film, such that the associated stresses cause the film to crack. The cracks lie in planes parallel to the direction of growth, so that the growing nitride film becomes divided into microscopic growing single-crystal columns. The outer ends of the fully-grown columns can serve as field-emission tips. By virtue of their chemical compositions and crystalline structures, the columns have low work functions and high electrical conductivities, both of which are desirable for field emission of electrons. From examination of transmission electron micrographs of a prototype device, the average column width was determined to be about 100 nm and the sharpness of the tips was determined to be characterized by a dimension somewhat less than 100 nm. The areal density of the columns was found to about 5 x 10(exp 9)/sq cm . about 4 to 5 orders of magnitude greater than the areal density of tips in prior field-emission devices. The electric field necessary to turn on the emission current and the current per tip in this device are both lower than in prior field-emission devices, such that it becomes possible to achieve longer operational lifetime. Moreover, notwithstanding the lower current per tip, because of the greater areal density of tips, it becomes possible to achieve greater current density averaged over the cathode area. The thickness of the grown nitride film (equivalently, the length of the columns) could lie between about 0.5 microns and a few microns; in any event, a thickness of about 1 micron is sufficient and costs less than do greater thicknesses. It may be possible to grow nitride emitter columns on glass or other substrate materials that cost less than silicon does. What is important in the choice of substrate material is the difference between the substrate and nitride crystalline structures. Inasmuch as the deposition process is nondestructive, an ability to grow emitter columns on a variety of materials would be advantageous in that it would facilitate the integration of field-emitter structures onto previously processed integrated circuits.

Chemical regeneration of emitter surface increases thermionic diode life

NASA Technical Reports Server (NTRS)

Breiteieser, R.

1966-01-01

Chemical regeneration of sublimated emitter electrode increases the operating efficiency and life of thermionic diodes. A gas which forms chemical compounds with the sublimated emitter material is introduced into the space between the emitter and the collector. The compounds migrate to the emitter where they decompose and redeposit the emitter material.

RF Guns for Generation of Polarized Electron Beams

DOE Office of Scientific and Technical Information (OSTI.GOV)

Clendenin, J.E.; Brachmann, A.; Dowell, D.H.

2005-11-09

Several accelerators, including the SLC, JLAB, Mainz, Bates/MIT, and Bonn have successfully operated for medium and high energy physics experiments using polarized electron beams generated by dc-biased guns employing GaAs photocathodes. Since these guns have all used a bias on the order of 100 kV, the longitudinal emittance of the extracted bunch is rather poor. Downstream rf bunching systems increase the transverse emittance. An rf gun with a GaAs photocathode would eliminate the need for separate rf bunchers, resulting in a simpler injection system. In addition, the thermal emittance of GaAs-type cathodes is significantly lower than for other photocathode materials.more » The environmental requirements for operating activated GaAs photocathodes cannot be met by rf guns as currently designed and operated. These requirements, including limits on vacuum and electron back bombardment, are discussed in some detail. Modifications to actual and proposed rf gun designs that would allow these requirements to be met are presented.« less

Emitter Choice for Epitaxial CdTe Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Tao; Kanevce, Ana; Sites, James R.

2016-11-21

High-quality epitaxial CdTe layers with low defect density and high carrier concentration have been demonstrated by several research groups. Nevertheless, one primary challenge for high-performance epitaxial CdTe solar cells is how to choose a suitable emitter partner for the junction formation. The numerical simulations show that a type I heterojunction with small conduction band offset (0.1 eV = ..delta..Ec = 0.3 eV) is necessary to maintain a good cell efficiency even with large interface recombination. Otherwise, a small 'cliff' can assist interface recombination causing smaller Voc, and a large 'spike' (..delta..Ec = 0.4 eV) can impede the photo current andmore » lead to a reduction of JSC and FF. Among the three possible emitters, CdS, CdMgTe, and MgZnO, CdMgTe (with ~30% Mg) and MgZnO (with ~ 20% Mg) are likely to be a better choice since their type-I junction can tolerate a larger density of interface defects.« less

High-Power Broad-Area Diode Lasers and Laser Bars

NASA Astrophysics Data System (ADS)

Erbert, Goetz; Baerwolff, Arthur; Sebastian, Juergen; Tomm, Jens

This review presents the basic ideas and some examples of the chip technology of high-power diode lasers ( λ= 650,-1060,) in connection with the achievements of mounted single-stripe emitters in recent years.In the first section the optimization of the epitaxial layer structure for a low facet load and high conversion efficiency is discussed. The so-called broadened waveguide Large Optical Cavity (LOC) concept is described and also some advantages and disadvantages of Al-free material. The next section deals with the processing steps of epitaxial wafers to make single emitters and bars. Several possibilities to realize contact windows (implantation, insulators, and wet chemical oxidation) and laser mirrors are presented. The impact of heating in the CW regime and some aspects of reliability are the following topics. The calculation of thermal distributions in diode lasers, which shows the need for sophisticated mounting, will be given. In the last part the current state-of-the-art of single-stripe emitters will be reviewed.

Organic light-emitting diodes for lighting: High color quality by controlling energy transfer processes in host-guest-systems

NASA Astrophysics Data System (ADS)

Weichsel, Caroline; Reineke, Sebastian; Furno, Mauro; Lüssem, Björn; Leo, Karl

2012-02-01

Exciton generation and transfer processes in a multilayer organic light-emitting diode (OLED) are studied in order to realize OLEDs with warm white color coordinates and high color-rendering index (CRI). We investigate a host-guest-system containing four phosphorescent emitters and two matrix materials with different transport properties. We show, by time-resolved spectroscopy, that an energy back-transfer from the blue emitter to the matrix materials occurs, which can be used to transport excitons to the other emitter molecules. Furthermore, we investigate the excitonic and electronic transfer processes by designing suitable emission layer stacks. As a result, we obtain an OLED with Commission Internationale de lÉclairage (CIE) coordinates of (0.444;0.409), a CRI of 82, and a spectrum independent of the applied current. The OLED shows an external quantum efficiency of 10% and a luminous efficacy of 17.4 lm/W at 1000 cd/m2.

Theoretical analysis of field emission from a metal diamond cold cathode emitter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lerner, P.; Cutler, P.H.; Miskovsky, N.M.

Recently, Geis {ital et al.} [J. Vac. Sci. Technol. B {bold 14}, 2060 (1996)] proposed a cold cathode emitter based on a Spindt-type design using a diamond film doped by substitutional nitrogen. The device is characterized by high field emission currents at very low power. Two properties, the rough surface of the metallic injector and the negative electron affinity of the (111) surface of the diamond are essential for its operation. We present a first consistent quantitative theory of the operation of a Geis{endash}Spindt diamond field emitter. Its essential features are predicated on nearly {ital zero-field conditions} in the diamondmore » beyond the depletion layer, {ital quasiballistic transport} in the conduction band, and applicability of a modified {ital Fowler{endash}Nordheim equation} to the transmission of electrons through the Schottky barrier at the metal-diamond interface. Calculated results are in good qualitative and quantitative agreement with the experimental results of Geis {ital et al.} {copyright} {ital 1997 American Vacuum Society.}« less

Direct Synthesis of Carbon Nanotube Field Emitters on Metal Substrate for Open-Type X-ray Source in Medical Imaging.

PubMed

Gupta, Amar Prasad; Park, Sangjun; Yeo, Seung Jun; Jung, Jaeik; Cho, Chonggil; Paik, Sang Hyun; Park, Hunkuk; Cho, Young Chul; Kim, Seung Hoon; Shin, Ji Hoon; Ahn, Jeung Sun; Ryu, Jehwang

2017-07-29

We report the design, fabrication and characterization of a carbon nanotube enabled open-type X-ray system for medical imaging. We directly grew the carbon nanotubes used as electron emitter for electron gun on a non-polished raw metallic rectangular-rounded substrate with an area of 0.1377 cm² through a plasma enhanced chemical vapor deposition system. The stable field emission properties with triode electrodes after electrical aging treatment showed an anode emission current of 0.63 mA at a gate field of 7.51 V/μm. The 4.5-inch cubic shape open type X-ray system was developed consisting of an X-ray aperture, a vacuum part, an anode high voltage part, and a field emission electron gun including three electrodes with focusing, gate and cathode electrodes. Using this system, we obtained high-resolution X-ray images accelerated at 42-70 kV voltage by digital switching control between emitter and ground electrode.

Intrinsic delay of permeable base transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Wenchao; Guo, Jing; So, Franky

2014-07-28

Permeable base transistors (PBTs) fabricated by vacuum deposition or solution process have the advantages of easy fabrication and low power operation and are a promising device structure for flexible electronics. Intrinsic delay of PBT, which characterizes the speed of the transistor, is investigated by solving the three-dimensional Poisson equation and drift-diffusion equation self-consistently using finite element method. Decreasing the emitter thickness lowers the intrinsic delay by improving on-current, and a thinner base is also preferred for low intrinsic delay because of fewer carriers in the base region at off-state. The intrinsic delay exponentially decreases as the emitter contact Schottky barriermore » height decreases, and it linearly depends on the carrier mobility. With an optimized emitter contact barrier height and device geometry, a sub-nano-second intrinsic delay can be achieved with a carrier mobility of ∼10 cm{sup 2}/V/s obtainable in solution processed indium gallium zinc oxide, which indicates the potential of solution processed PBTs for GHz operations.« less

Direct Synthesis of Carbon Nanotube Field Emitters on Metal Substrate for Open-Type X-ray Source in Medical Imaging

PubMed Central

Gupta, Amar Prasad; Park, Sangjun; Yeo, Seung Jun; Jung, Jaeik; Cho, Chonggil; Paik, Sang Hyun; Park, Hunkuk; Cho, Young Chul; Kim, Seung Hoon; Shin, Ji Hoon; Ahn, Jeung Sun; Ryu, Jehwang

2017-01-01

We report the design, fabrication and characterization of a carbon nanotube enabled open-type X-ray system for medical imaging. We directly grew the carbon nanotubes used as electron emitter for electron gun on a non-polished raw metallic rectangular-rounded substrate with an area of 0.1377 cm2 through a plasma enhanced chemical vapor deposition system. The stable field emission properties with triode electrodes after electrical aging treatment showed an anode emission current of 0.63 mA at a gate field of 7.51 V/μm. The 4.5-inch cubic shape open type X-ray system was developed consisting of an X-ray aperture, a vacuum part, an anode high voltage part, and a field emission electron gun including three electrodes with focusing, gate and cathode electrodes. Using this system, we obtained high-resolution X-ray images accelerated at 42–70 kV voltage by digital switching control between emitter and ground electrode. PMID:28773237

NCTM of liquids at high temperatures using polarization techniques

NASA Technical Reports Server (NTRS)

Krishnan, Shankar; Weber, J. K. Richard; Nordine, Paul C.; Schiffman, Robert A.

1990-01-01

Temperature measurement and control is extremely important in any materials processing application. However, conventional techniques for non-contact temperature measurement (mainly optical pyrometry) are very uncertain because of unknown or varying surface emittance. Optical properties like other properties change during processing. A dynamic, in-situ measurement of optical properties including the emittance is required. Intersonics is developing new technologies using polarized laser light scattering to determine surface emittance of freely radiating bodies concurrent with conventional optical pyrometry. These are sufficient to determine the true surface temperature of the target. Intersonics is currently developing a system called DAPP, the Division of Amplitude Polarimetric Pyrometer, that uses polarization information to measure the true thermodynamic temperature of freely radiating objects. This instrument has potential use in materials processing applications in ground and space based equipment. Results of thermophysical and thermodynamic measurements using laser reflection as a temperature measuring tool are presented. The impact of these techniques on thermophysical property measurements at high temperature is discussed.

Comparison of Chest Pain Protocols for Electrocardiography-Gated Dual-Source Cardiothoracic CT in Children and Adults: The Effect of Tube Current Saturation on Radiation Dose Reduction

PubMed Central

2018-01-01

Objective To compare radiation doses between conventional and chest pain protocols using dual-source retrospectively electrocardiography (ECG)-gated cardiothoracic computed tomography (CT) in children and adults and assess the effect of tube current saturation on radiation dose reduction. Materials and Methods This study included 104 patients (16.6 ± 7.7 years, range 5–48 years) that were divided into two groups: those with and those without tube current saturation. The estimated radiation doses of retrospectively ECG-gated spiral cardiothoracic CT were compared between conventional, uniphasic, and biphasic chest pain protocols acquired with the same imaging parameters in the same patients by using paired t tests. Dose reduction percentages, patient ages, volume CT dose index values, and tube current time products per rotation were compared between the two groups by using unpaired t tests. A p value < 0.05 was considered significant. Results The volume CT dose index values of the biphasic chest pain protocol (10.8 ± 3.9 mGy) were significantly lower than those of the conventional protocol (12.2 ± 4.7 mGy, p < 0.001) and those of the uniphasic chest pain protocol (12.9 ± 4.9 mGy, p < 0.001). The dose-saving effect of biphasic chest pain protocol was significantly less with a saturated tube current (4.5 ± 10.2%) than with unsaturated tube current method (14.8 ± 11.5%, p < 0.001). In 76 patients using 100 kVp, patient age showed no significant differences between the groups with and without tube current saturation in all protocols (p > 0.05); the groups with tube current saturation showed significantly higher volume CT dose index values (p < 0.01) and tube current time product per rotation (p < 0.001) than the groups without tube current saturation in all protocols. Conclusion The radiation dose of dual-source retrospectively ECG-gated spiral cardiothoracic CT can be reduced by approximately 15% by using the biphasic chest pain protocol instead of the conventional protocol in children and adults if radiation dose parameters are further optimized to avoid tube current saturation. PMID:29353996

Toward a systematic design theory for silicon solar cells using optimization techniques

NASA Technical Reports Server (NTRS)

Misiakos, K.; Lindholm, F. A.

1986-01-01

This work is a first detailed attempt to systematize the design of silicon solar cells. Design principles follow from three theorems. Although the results hold only under low injection conditions in base and emitter regions, they hold for arbitrary doping profiles and include the effects of drift fields, high/low junctions and heavy doping concentrations of donor or acceptor atoms. Several optimal designs are derived from the theorems, one of which involves a three-dimensional morphology in the emitter region. The theorems are derived from a nonlinear differential equation of the Riccati form, the dependent variable of which is a normalized recombination particle current.

High reliability and high performance of 9xx-nm single emitter laser diodes

NASA Astrophysics Data System (ADS)

Bao, L.; Leisher, P.; Wang, J.; Devito, M.; Xu, D.; Grimshaw, M.; Dong, W.; Guan, X.; Zhang, S.; Bai, C.; Bai, J. G.; Wise, D.; Martinsen, R.

2011-03-01

Improved performance and reliability of 9xx nm single emitter laser diodes are presented. To date, over 15,000 hours of accelerated multi-cell lifetest reliability data has been collected, with drive currents from 14A to 18A and junction temperatures ranging from 60°C to 110°C. Out of 208 devices, 14 failures have been observed so far. Using established accelerated lifetest analysis techniques, the effects of temperature and power acceleration are assessed. The Mean Time to Failure (MTTF) is determined to be >30 years, for use condition 10W and junction temperature 353K (80°C), with 90% statistical confidence.

Type-II GaAsSb/InP heterojunction bipolar light-emitting transistor

NASA Astrophysics Data System (ADS)

Feng, M.; Holonyak, N.; Chu-Kung, B.; Walter, G.; Chan, R.

2004-06-01

We report radiative recombination in the base layer of Type-II InP/GaAsSb/InP double heterojunction bipolar light-emitting transistors (HBLET) operating in the common-emitter configuration. The typical current gain, β, for a 120×120 μm2 emitter area of the HBLET is 38. The optical emission wavelength from a 30 nm GaAs0.51Sb0.49 base is centered at λpeak=1600 nm. Three-port operation of the Type-II HBLET with simultaneously an amplified electrical output and an optical output with signal modulation is demonstrated at 10 kHz.

Progress in reliable single emitters and laser bars for efficient CW-operation in the near-infrared emission range

NASA Astrophysics Data System (ADS)

Zorn, Martin; Hülsewede, Ralf; Pietrzak, Agnieszka; Meusel, Jens; Sebastian, Jürgen

2015-03-01

Laser bars, laser arrays, and single emitters are highly-desired light sources e.g. for direct material processing, pump sources for solid state and fiber lasers or medical applications. These sources require high output powers with optimal efficiency together with good reliability resulting in a long lifetime of the device. Desired wavelengths range from 760 nm in esthetic skin treatment over 915 nm, 940 nm and 976 nm to 1030 nm for direct material processing and pumping applications. In this publication we present our latest developments for the different application-defined wavelengths in continuouswave operation mode. At 760nm laser bars with 30 % filling factor and 1.5 mm resonator length show optical output powers around 90-100 W using an optimized design. For longer wavelengths between 915 nm and 1030 nm laser bars with 4 mm resonator length and 50 % filling factor show reliable output powers above 200 W. The efficiency reached lies above 60% and the slow axis divergence (95% power content) is below 7°. Further developments of bars tailored for 940 nm emission wavelength reach output powers of 350 W. Reliable single emitters for effective fiber coupling having emitter widths of 90 μm and 195 μm are presented. They emit optical powers of 12 W and 24 W, respectively, at emission wavelengths of 915 nm, 940 nm and 976 nm. Moreover, reliability tests of 90 μm-single emitters at a power level of 12W currently show a life time over 3500 h.

IEEE Conference Record of 1982 Fifteenth Power Modulator Symposium, 14-16 June 1982.

DTIC Science & Technology

1982-01-01

equation (10). starts conduction, and thus limiter operation, when the base voltage reaches the cutin value of 0. 6 volts RB + R RB (VBE) for a silicon...the pass transistor and thus reduces output current. Current limit (IMAX ) is reached when the base -emitter of Q1 reaches the cutin value of 0. 6

Patterned growth of carbon nanotubes over vertically aligned silicon nanowire bundles for achieving uniform field emission.

PubMed

Hung, Yung-Jr; Huang, Yung-Jui; Chang, Hsuan-Chen; Lee, Kuei-Yi; Lee, San-Liang

2014-01-01

A fabrication strategy is proposed to enable precise coverage of as-grown carbon nanotube (CNT) mats atop vertically aligned silicon nanowire (VA-SiNW) bundles in order to realize a uniform bundle array of CNT-SiNW heterojunctions over a large sample area. No obvious electrical degradation of as-fabricated SiNWs is observed according to the measured current-voltage characteristic of a two-terminal single-nanowire device. Bundle arrangement of CNT-SiNW heterojunctions is optimized to relax the electrostatic screening effect and to maximize the field enhancement factor. As a result, superior field emission performance and relatively stable emission current over 12 h is obtained. A bright and uniform fluorescent radiation is observed from CNT-SiNW-based field emitters regardless of its bundle periodicity, verifying the existence of high-density and efficient field emitters on the proposed CNT-SiNW bundle arrays.

Analysis of a photon assisted field emission device

NASA Astrophysics Data System (ADS)

Jensen, K. L.; Lau, Y. Y.; McGregor, D. S.

2000-07-01

A field emitter array held at the threshold of emission by a dc gate potential from which current pulses are triggered by the application of a laser pulse on the backside of the semiconductor may produce electron bunches ("density modulation") at gigahertz frequencies. We develop an analytical model of such optically controlled emission from a silicon tip using a modified Wentzel-Kramers-Brillouin and Airy function approach to solving Schrödinger's equation. Band bending and an approximation to the exchange-correlation effects on the image charge potential are included for an array of hyperbolic emitters with a distribution in tip radii and work function. For a simple relationship between the incident photon flux and the resultant electron density at the emission site, an estimation of the tunneling current is made. An example of the operation and design of such a photon-assisted field emission device is given.

Axial diffusion barriers in near-infrared nanopillar LEDs.

PubMed

Scofield, Adam C; Lin, Andrew; Haddad, Michael; Huffaker, Diana L

2014-11-12

The growth of GaAs/GaAsP axial heterostructures is demonstrated and implemented as diffusion current barriers in nanopillar light-emitting diodes at near-infrared wavelengths. The nanopillar light-emitting diodes utilize an n-GaAs/i-InGaAs/p-GaAs axial heterostructure for current injection. Axial GaAsP segments are inserted into the n- and p-GaAs portions of the nanopillars surrounding the InGaAs emitter region, acting as diffusion barriers to provide enhanced carrier confinement. Detailed characterization of growth of the GaAsP inserts and electronic band-offset measurements are used to effectively implement the GaAsP inserts as diffusion barriers. The implementation of these barriers in nanopillar light-emitting diodes provides a 5-fold increase in output intensity, making this a promising approach to high-efficiency pillar-based emitters in the near-infrared wavelength range.

Mask-less patterning of organic light emitting diodes using electrospray and selective biasing on pixel electrodes

NASA Astrophysics Data System (ADS)

Lee, Sangyeob; Koo, Hyun; Cho, Sunghwan

2015-04-01

Wet process of soluble organic light emitting diode (OLED) materials has attracted much attention due to its potential as a large-area manufacturing process with high productivity. Electrospray (ES) deposition is one of candidates of organic thin film formation process for OLED. However, to fabricate red, green, and blue emitters for color display, a fine metal mask is required during spraying emitter materials. We demonstrate a mask-less color pixel patterning process using ES of soluble OLED materials and selective biasing on pixel electrodes and a spray nozzle. We show red and green line patterns of OLED materials. It was found that selective patterning can be allowed by coulomb repulsion between nozzle and pixel. Furthermore, we fabricated blue fluorescent OLED devices by vacuum evaporation and ES processes. The device performance of ES processed OLED showed nearly identical current-voltage characteristics and slightly lower current efficiency compared to vacuum processed OLED.

Computer controlled performance mapping of thermionic converters: effect of collector, guard-ring potential imbalances on the observed collector current-density, voltage characteristics and limited range performance map of an etched-rhenium, niobium planar converter

NASA Technical Reports Server (NTRS)

Manista, E. J.

1972-01-01

The effect of collector, guard-ring potential imbalance on the observed collector-current-density J, collector-to-emitter voltage V characteristic was evaluated in a planar, fixed-space, guard-ringed thermionic converter. The J,V characteristic was swept in a period of 15 msec by a variable load. A computerized data acquisition system recorded test parameters. The results indicate minimal distortion of the J,V curve in the power output quadrant for the nominal guard-ring circuit configuration. Considerable distortion, along with a lowering of the ignited-mode striking voltage, was observed for the configuration with the emitter shorted to the guard ring. A limited-range performance map of an etched-rhenium, niobium, planar converter was obtained by using an improved computer program for the data acquisition system.

Use of probabilistic neural networks for emitter correlation

NASA Astrophysics Data System (ADS)

Maloney, P. S.

1990-08-01

The Probabilistic Neural Network (PNN) as described by Specht''3 has been successfully applied to a number of emitter correlation problems involving operational data for training and testing of the neural net work. The PNN has been found to be a reliable classification tool for determining emitter type or even identifying specific emitter platforms given appropriate representative data sets for training con sisting only of parametric data from electronic intelligence (ELINT) reports. Four separate feasibility studies have been conducted to prove the usefulness of PNN in this application area: . Hull-to-emitter correlation (HULTEC) for identification of seagoing emitter platforms . Identification of landbased emitters from airborne sensors . Pulse sorting according to emitter of origin . Emitter typing based on a dynamically learning neural network. 1 .

Self-Powered Neutron Detector Calibration Using a Large Vertical Irradiation Hole of HANARO

NASA Astrophysics Data System (ADS)

Kim, Myong-Seop; Park, Byung-Gun; Kang, Gi-Doo

2018-01-01

A calibration technology of the self-powered neutron detectors (SPNDs) using a large vertical irradiation hole of HANARO is developed. The 40 Rh-SPNDs are installed on the polycarbonate plastic support, and the gold wires with the same length as the effective length of the rhodium emitter of the SPND are also installed to measure the neutron flux on the SPND. They are irradiated at a low reactor power, and the SPND current is measured using the pico-ammeter. The external gamma-rays which affect the SPND current response are analyzed using the Monte Carlo simulation for various irradiation conditions in HANARO. It is confirmed that the effect of the external gamma-rays to the SPND current is dependent on the reactor characteristics, and that it is affected by materials around the detector. The current signals due to the external gamma-rays can be either positive or negative, in that the net flow of the current may be either in the same or the opposite direction as the neutron-induced current by the rhodium emitter. From the above procedure, the effective calibration methodology of multiple SPNDs using the large hole of HANARO is developed. It could be useful for the calibration experiment of the neutron detectors in the research reactors.

Fabrication, characterization and simulation of 4H-SiC Schottky diode alpha particle detectors for pyroprocessing actinide monitoring

NASA Astrophysics Data System (ADS)

Garcia, Timothy Richard

Pyroprocessing is a method of using high-temperature molten salts and electric fields to separate and collect fuel isotopes of used nuclear fuel. It has been has been tested in the U.S. at Idaho National Laboratory as a key step in closing the nuclear fuel cycle. One technical problem with the pyroprocessing method is a lack of knowledge regarding the actinide concentrations in the salt bath during operation, since on-line techniques for measuring these concentrations are not presently available. 4H-SiC Schottky diode detectors can potentially fulfill this need. Such detectors would operate in contact with the molten salt, and measure concentrations via alpha-particle spectroscopy. This work seeks to fabricate and characterize 4H-SiC Schottky diode detectors at high temperature, model the alpha particle spectrum expected in a molten salt, and model the operation of the detectors to confirm the physics of operation is as expected. In this work, 4H-SiC Schottky diode detectors were fabricated at OSU Nanotech West. After fabrication, these detectors were characterized using both I-V curves and Am-241 alpha-particle energy spectra. All measurements were made as a function of temperature, from room temperature up to 500°C. The average energy required to create an electron-hole pair was observed to decrease with an increase of temperature, due to a decrease of both the 4H-SiC bandgap and non-linear energy loss terms. Furthermore, the FWHM of the spectra was observed to be dependent on the leakage current at a certain temperature, and not dependent on the temperature itself. Secondly, the alpha particle energy spectrum in the pyroprocessing environment was modeled using SRIM. The molten salt was modeled in 3 different geometries, with or without a protective cover material on top of the detector. Due to the loss of alpha-particle energy in the molten salt itself, a high-energy alpha emitter may completely cover the spectrum from a lower-energy alpha emitter. Each of the geometries simulated showed a different sensitivity to the lower-energy alpha emitter. Regardless of which geometry was modeled, it was observed that it is possible to measure both the emission energy of the alpha particles, as well as the concentration of the alpha emitter in the liquid. Lastly, Sentaurus TCAD was used to simulate the detection of alpha-particle charge collection in situations that are relevant to the molten salt alpha particle energy spectra. The effect of electric field negation was investigated, as well as velocity saturation. Finally, the dependence of charge recombination on temperature, alpha particle energy, and angle of incidence was investigated. These simulations captured the measurements performed at room temperature. With changed angle of incidence, the change in the amount of charge collected was less than 1 percent, indicating a weak dependence. Also, the amount of charge lost to Auger recombination was seen to increase with temperature. This disagrees with observations from experiment, indicating that the temperature dependence of one or more parameters of the model may not be accurate.

Hybrid-mode read-in integrated circuit for infrared scene projectors

NASA Astrophysics Data System (ADS)

Cho, Min Ji; Shin, Uisub; Lee, Hee Chul

2017-05-01

The infrared scene projector (IRSP) is a tool for evaluating infrared sensors by producing infrared images. Because sensor testing with IRSPs is safer than field testing, the usefulness of IRSPs is widely recognized at present. The important performance characteristics of IRSPs are the thermal resolution and the thermal dynamic range. However, due to an existing trade-off between these requirements, it is often difficult to find a workable balance between them. The conventional read-in integrated circuit (RIIC) can be classified into two types: voltage-mode and current-mode types. An IR emitter driven by a voltage-mode RIIC offers a fine thermal resolution. On the other hand, an emitter driven by the current-mode RIIC has the advantage of a wide thermal dynamic range. In order to provide various scenes, i.e., from highresolution scenes to high-temperature scenes, both of the aforementioned advantages are required. In this paper, a hybridmode RIIC which is selectively operated in two modes is proposed. The mode-selective characteristic of the proposed RIIC allows users to generate high-fidelity scenes regardless of the scene content. A prototype of the hybrid-mode RIIC was fabricated using a 0.18-μm 1-poly 6-metal CMOS process. The thermal range and the thermal resolution of the IR emitter driven by the proposed circuit were calculated based on measured data. The estimated thermal dynamic range of the current mode was from 261K to 790K, and the estimated thermal resolution of the voltage mode at 300K was 23 mK with a 12-bit gray-scale resolution.

Role of vanguard counter-potential in terahertz emission due to surface currents explicated by three-dimensional ensemble Monte Carlo simulation

NASA Astrophysics Data System (ADS)

Cortie, D. L.; Lewis, R. A.

2011-10-01

The discovery that short pulses of near-infrared radiation striking a semiconductor may lead to emission of radiation at terahertz frequencies paved the way for terahertz time-domain spectroscopy. Previous modeling has allowed the physical mechanisms to be understood in general terms but it has not fully explored the role of key physical parameters of the emitter material nor has it fully revealed the competing nature of the surface-field and photo-Dember effects. In this context, our purpose has been to more fully explicate the mechanisms of terahertz emission from transient currents at semiconductor surfaces and to determine the criteria for efficient emission. To achieve this purpose we employ an ensemble Monte Carlo simulation in three dimensions. To ground the calculations, we focus on a specific emitter, InAs. We separately vary distinct physical parameters to determine their specific contribution. We find that scattering as a whole has relatively little impact on the terahertz emission. The emission is found to be remarkably resistant to alterations of the dark surface potential. Decreasing the band gap leads to a strong increase in terahertz emission, as does decreasing the electron mass. Increasing the absorption dramatically influences the peak-peak intensity and peak shape. We conclude that increasing absorption is the most direct path to improve surface-current semiconductor terahertz emitters. We find for longer pump pulses that the emission is limited by a newly identified vanguard counter-potential mechanism: Electrons at the leading edge of longer laser pulses repel subsequent electrons. This discovery is the main result of our work.

Emitter location errors in electronic recognition system

NASA Astrophysics Data System (ADS)

Matuszewski, Jan; Dikta, Anna

2017-04-01

The paper describes some of the problems associated with emitter location calculations. This aspect is the most important part of the series of tasks in the electronic recognition systems. The basic tasks include: detection of emission of electromagnetic signals, tracking (determining the direction of emitter sources), signal analysis in order to classify different emitter types and the identification of the sources of emission of the same type. The paper presents a brief description of the main methods of emitter localization and the basic mathematical formulae for calculating their location. The errors' estimation has been made to determine the emitter location for three different methods and different scenarios of emitters and direction finding (DF) sensors deployment in the electromagnetic environment. The emitter has been established using a special computer program. On the basis of extensive numerical calculations, the evaluation of precise emitter location in the recognition systems for different configuration alignment of bearing devices and emitter was conducted. The calculations which have been made based on the simulated data for different methods of location are presented in the figures and respective tables. The obtained results demonstrate that calculation of the precise emitter location depends on: the number of DF sensors, the distances between emitter and DF sensors, their mutual location in the reconnaissance area and bearing errors. The precise emitter location varies depending on the number of obtained bearings. The higher the number of bearings, the better the accuracy of calculated emitter location in spite of relatively high bearing errors for each DF sensor.

The Measurement of e/k in the Introductory Physics Laboratory

ERIC Educational Resources Information Center

Inman, Fred W.; Miller, Carl E.

1973-01-01

The ratio of electronic charge to Boltzmann's constant can be easily determined by measuring the short-circuit collector current versus the emitter-base voltage characteristic of a silicon transistor connected in the common-base mode. (Author/DF)

Rare earth garnet selective emitter

NASA Technical Reports Server (NTRS)

Lowe, Roland A.; Chubb, Donald L.; Farmer, Serene C.; Good, Brian S.

1994-01-01

Thin film Ho-YAG and Er-YAG emitters with a platinum substrate exhibit high spectral emittance in the emission band (epsilon(sub lambda) approximately equal to 0.74, ((4)l(sub 15/2)) - ( (4)l(sub13/2)), for Er-YAG and epsilon(sub lambda) approximately equal to 0.65, ((5)l(sub 7))-((5)l(sub 8)) for Ho-YAG) at excellent candidates for high efficiency selective emitters in the thermophotovoltaics (TPV) systems operating at moderate temperatures (1200-1500K). Spectral emittance measurements of the thin films were made (1.2 less than lambda less than 3.0 microns) and compared to the theoretical emittances calculated using measured values of the spectral extinction coefficient. In this paper we present the results for a new class of rare earth ion selective emitters. These emitters are thin sections (less than 1 mm) of yttrium aluminum garnet (YAG) single crystal with a rare earth substitutional impurity. This paper presents normal spectral emittance, epsilon(sub lambda), measurements of holmium (Ho), and erbium (Er) doped YAG thin film selective emitters at 1500 K, and compares those results with the theoretical spectral emittance.

Power flow control using distributed saturable reactors

DOEpatents

Dimitrovski, Aleksandar D.

2016-02-13

A magnetic amplifier includes a saturable core having a plurality of legs. Control windings wound around separate legs are spaced apart from each other and connected in series in an anti-symmetric relation. The control windings are configured in such a way that a biasing magnetic flux arising from a control current flowing through one of the plurality of control windings is substantially equal to the biasing magnetic flux flowing into a second of the plurality of control windings. The flow of the control current through each of the plurality of control windings changes the reactance of the saturable core reactor by driving those portions of the saturable core that convey the biasing magnetic flux in the saturable core into saturation. The phasing of the control winding limits a voltage induced in the plurality of control windings caused by a magnetic flux passing around a portion of the saturable core.

Determination of the efficiency of commercially available dose calibrators for beta-emitters.

PubMed

Valley, Jean-François; Bulling, Shelley; Leresche, Michel; Wastiel, Claude

2003-03-01

The goals of this investigation are to determine whether commercially available dose calibrators can be used to measure the activity of beta-emitting radionuclides used in pain palliation and to establish whether manufacturer-supplied calibration factors are appropriate for this purpose. Six types of commercially available dose calibrators were studied. Dose calibrator response was controlled for 5 gamma-emitters used for calibration or typically encountered in routine use. For the 4 most commonly used beta-emitters ((32)P, (90)Sr, (90)Y, and (169)Er) dose calibrator efficiency was determined in the syringe geometry used for clinical applications. Efficiency of the calibrators was also measured for (153)Sm and (186)Re, 2 beta-emitters with significant gamma-contributions. Source activities were traceable to national standards. All calibrators measured gamma-emitters with a precision of +/-10%, in compliance with Swiss regulatory requirements. For beta-emitters, dose calibrator intrinsic efficiency depends strongly on the maximal energy of the beta-spectrum and is notably low for (169)Er. Manufacturer-supplied calibration factors give accurate results for beta-emitters with maximal beta-energy in the middle-energy range (1 MeV) but are not appropriate for use with low-energy ((169)Er) or high-energy ((90)Y) beta-emitters. beta-emitters with significant gamma-contributions behave like gamma-emitters. Commercially available dose calibrators have an intrinsic efficiency that is sufficient for the measurement of beta-emitters, including beta-emitters with a low maximum beta-energy. Manufacturer-supplied calibration factors are reliable for gamma-emitters and beta-emitters in the middle-energy range. For low- and high-energy beta-emitters, the use of manufacturer-supplied calibration factors introduces significant measurement inaccuracy.

Multinozzle emitter arrays for ultrahigh-throughput nanoelectrospray mass spectrometry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Daojing; Mao, Pan; Wang, Hung-Ta

The present invention provides for a structure comprising a plurality of emitters, wherein a first nozzle of a first emitter and a second nozzle of a second emitter emit in two directions that are not or essentially not in the same direction; wherein the walls of the nozzles and the emitters form a monolithic whole. The present invention also provides for a structure comprising an emitter with a sharpened end from which the emitter emits; wherein the emitters forms a monolithic whole. The present invention also provides for a fully integrated separation of proteins and small molecules on a siliconmore » chip before the electrospray mass spectrometry analysis.« less

Highly efficient blue and warm white organic light-emitting diodes with a simplified structure

NASA Astrophysics Data System (ADS)

Li, Xiang-Long; Ouyang, Xinhua; Chen, Dongcheng; Cai, Xinyi; Liu, Ming; Ge, Ziyi; Cao, Yong; Su, Shi-Jian

2016-03-01

Two blue fluorescent emitters were utilized to construct simplified organic light-emitting diodes (OLEDs) and the remarkable difference in device performance was carefully illustrated. A maximum current efficiency of 4.84 cd A-1 (corresponding to a quantum efficiency of 4.29%) with a Commission Internationale de l’Eclairage (CIE) coordinate of (0.144, 0.127) was achieved by using N,N-diphenyl-4″-(1-phenyl-1H-benzo[d]imidazol-2-yl)-[1, 1‧:4‧, 1″-terphenyl]-4-amine (BBPI) as a non-doped emission layer of the simplified blue OLEDs without carrier-transport layers. In addition, simplified fluorescent/phosphorescent (F/P) hybrid warm white OLEDs without carrier-transport layers were fabricated by utilizing BBPI as (1) the blue emitter and (2) the host of a complementary yellow phosphorescent emitter (PO-01). A maximum current efficiency of 36.8 cd A-1 and a maximum power efficiency of 38.6 lm W-1 were achieved as a result of efficient energy transfer from the host to the guest and good triplet exciton confinement on the phosphorescent molecules. The blue and white OLEDs are among the most efficient simplified fluorescent blue and F/P hybrid white devices, and their performance is even comparable to that of most previously reported complicated multi-layer devices with carrier-transport layers.

Two-dimensional and 3-D images of thick tissue using time-constrained times-of-flight and absorbance spectrophotometry

NASA Astrophysics Data System (ADS)

Benaron, David A.; Lennox, M.; Stevenson, David K.

1992-05-01

Reconstructing deep-tissue images in real time using spectrophotometric data from optically diffusing thick tissues has been problematic. Continuous wave applications (e.g., pulse oximetry, regional cerebral saturation) ignore both the multiple paths traveled by the photons through the tissue and the effects of scattering, allowing scalar measurements but only under limited conditions; interferometry works poorly in thick, highly-scattering media; frequency- modulated approaches may not allow full deconvolution of scattering and absorbance; and pulsed-light techniques allow for preservation of information regarding the multiple paths taken by light through the tissue, but reconstruction is both computation intensive and limited by the relative surface area available for detection of photons. We have developed a picosecond times-of-flight and absorbance (TOFA) optical system, time-constrained to measure only photons with a narrow range of path lengths and arriving within a narrow angel of the emitter-detector axis. The delay until arrival of the earliest arriving photons is a function of both the scattering and absorbance of the tissues in a direct line between the emitter and detector, reducing the influence of surrounding tissues. Measurement using a variety of emitter and detector locations produces spatial information which can be analyzed in a standard 2-D grid, or subject to computer reconstruction to produce tomographic images representing 3-D structure. Using such a technique, we have been able to demonstrate the principles of tc-TOFA, detect and localize diffusive and/or absorptive objects suspended in highly scattering media (such as blood admixed with yeast), and perform simple 3-D reconstructions using phantom objects. We are now attempting to obtain images in vivo. Potential future applications include use as a research tool, and as a continuous, noninvasive, nondestructive monitor in diagnostic imaging, fetal monitoring, neurologic and cardiac assessment. The technique may lead to real-time optical imaging and quantitation of tissues oxygen delivery.

Influence of helical external driven current on nonlinear resistive tearing mode evolution and saturation in tokamaks

NASA Astrophysics Data System (ADS)

Zhang, W.; Wang, S.; Ma, Z. W.

2017-06-01

The influences of helical driven currents on nonlinear resistive tearing mode evolution and saturation are studied by using a three-dimensional toroidal resistive magnetohydrodynamic code (CLT). We carried out three types of helical driven currents: stationary, time-dependent amplitude, and thickness. It is found that the helical driven current is much more efficient than the Gaussian driven current used in our previous study [S. Wang et al., Phys. Plasmas 23(5), 052503 (2016)]. The stationary helical driven current cannot persistently control tearing mode instabilities. For the time-dependent helical driven current with f c d = 0.01 and δ c d < 0.04 , the island size can be reduced to its saturated level that is about one third of the initial island size. However, if the total driven current increases to about 7% of the total plasma current, tearing mode instabilities will rebound again due to the excitation of the triple tearing mode. For the helical driven current with time dependent strength and thickness, the reduction speed of the radial perturbation component of the magnetic field increases with an increase in the driven current and then saturates at a quite low level. The tearing mode is always controlled even for a large driven current.

Parallel nanomanufacturing via electrohydrodynamic jetting from microfabricated externally-fed emitter arrays

NASA Astrophysics Data System (ADS)

Ponce de Leon, Philip J.; Hill, Frances A.; Heubel, Eric V.; Velásquez-García, Luis F.

2015-06-01

We report the design, fabrication, and characterization of planar arrays of externally-fed silicon electrospinning emitters for high-throughput generation of polymer nanofibers. Arrays with as many as 225 emitters and with emitter density as large as 100 emitters cm-2 were characterized using a solution of dissolved PEO in water and ethanol. Devices with emitter density as high as 25 emitters cm-2 deposit uniform imprints comprising fibers with diameters on the order of a few hundred nanometers. Mass flux rates as high as 417 g hr-1 m-2 were measured, i.e., four times the reported production rate of the leading commercial free-surface electrospinning sources. Throughput increases with increasing array size at constant emitter density, suggesting the design can be scaled up with no loss of productivity. Devices with emitter density equal to 100 emitters cm-2 fail to generate fibers but uniformly generate electrosprayed droplets. For the arrays tested, the largest measured mass flux resulted from arrays with larger emitter separation operating at larger bias voltages, indicating the strong influence of electrical field enhancement on the performance of the devices. Incorporation of a ground electrode surrounding the array tips helps equalize the emitter field enhancement across the array as well as control the spread of the imprints over larger distances.

Differential Amplifier with Current-Mirror Load: Influence of Current Gain, Early Voltage, and Supply Voltage on the DC Output Voltage

ERIC Educational Resources Information Center

Paulik, G. F.; Mayer, R. P.

2012-01-01

A differential amplifier composed of an emitter-coupled pair is useful as an example in lecture presentations and laboratory experiments in electronic circuit analysis courses. However, in an active circuit with zero input load V[subscript id], both laboratory measurements and PSPICE and LTspice simulation results for the output voltage…

Comparative investigation of InGaP/GaAs/GaAsBi and InGaP/GaAs heterojunction bipolar transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Yi-Chen; Tsai, Jung-Hui, E-mail: jhtsai@nknucc.nknu.edu.tw; Chiang, Te-Kuang

2015-10-15

In this article the characteristics of In{sub 0.49}Ga{sub 0.51}P/GaAs/GaAs{sub 0.975}Bi{sub 0.025} and In{sub 0.49}Ga{sub 0.51}P/GaAs heterojunction bipolar transistor (HBTs) are demonstrated and compared by two-dimensional simulated analysis. As compared to the traditional InGaP/GaAs HBT, the studied InGaP/GaAs/GaAsBi HBT exhibits a higher collector current, a lower base-emitter (B–E) turn-on voltage, and a relatively lower collector-emitter offset voltage of only 7 mV. Because the more electrons stored in the base is further increased in the InGaP/GaAs/GaAsBi HBT, it introduces the collector current to increase and the B–E turn-on voltage to decrease for low input power applications. However, the current gain is slightlymore » smaller than the traditional InGaP/GaAs HBT attributed to the increase of base current for the minority carriers stored in the GaAsBi base.« less

A theoretical analysis of the current-voltage characteristics of solar cells

NASA Technical Reports Server (NTRS)

Fang, R. C. Y.; Hauser, J. R.

1979-01-01

The following topics are discussed: (1) dark current-voltage characteristics of solar cells; (2) high efficiency silicon solar cells; (3) short circuit current density as a function of temperature and the radiation intensity; (4) Keldysh-Franz effects and silicon solar cells; (5) thin silicon solar cells; (6) optimum solar cell designs for concentrated sunlight; (7) nonuniform illumination effects of a solar cell; and (8) high-low junction emitter solar cells.

Optimization of solenoid based low energy beam transport line for high current H+ beams

NASA Astrophysics Data System (ADS)

Pande, R.; Singh, P.; Rao, S. V. L. S.; Roy, S.; Krishnagopal, S.

2015-02-01

A 20 MeV, 30 mA CW proton linac is being developed at BARC, Mumbai. This linac will consist of an ECR ion source followed by a Radio Frequency Quadrupole (RFQ) and Drift tube Linac (DTL). The low energy beam transport (LEBT) line is used to match the beam from the ion source to the RFQ with minimum beam loss and increase in emittance. The LEBT is also used to eliminate the unwanted ions like H2+ and H3+ from entering the RFQ. In addition, space charge compensation is required for transportation of such high beam currents. All this requires careful design and optimization. Detailed beam dynamics simulations have been done to optimize the design of the LEBT using the Particle-in-cell code TRACEWIN. We find that with careful optimization it is possible to transport a 30 mA CW proton beam through the LEBT with 100% transmission and minimal emittance blow up, while at the same time suppressing unwanted species H2+ and H3+ to less than 3.3% of the total beam current.

Construction and commissioning of the compact energy-recovery linac at KEK

NASA Astrophysics Data System (ADS)

Akemoto, Mitsuo; Arakawa, Dai; Asaoka, Seiji; Cenni, Enrico; Egi, Masato; Enami, Kazuhiro; Endo, Kuninori; Fukuda, Shigeki; Furuya, Takaaki; Haga, Kaiichi; Hajima, Ryoichi; Hara, Kazufumi; Harada, Kentaro; Honda, Tohru; Honda, Yosuke; Honma, Teruya; Hosoyama, Kenji; Kako, Eiji; Katagiri, Hiroaki; Kawata, Hiroshi; Kobayashi, Yukinori; Kojima, Yuuji; Kondou, Yoshinari; Tanaka, Olga; Kume, Tatsuya; Kuriki, Masao; Matsumura, Hiroshi; Matsushita, Hideki; Michizono, Shinichiro; Miura, Takako; Miyajima, Tsukasa; Nagahashi, Shinya; Nagai, Ryoji; Nakai, Hirotaka; Nakajima, Hiromitsu; Nakamura, Norio; Nakanishi, Kota; Nigorikawa, Kazuyuki; Nishimori, Nobuyuki; Nogami, Takashi; Noguchi, Shuichi; Obina, Takashi; Qiu, Feng; Sagehashi, Hidenori; Sakai, Hiroshi; Sakanaka, Shogo; Sasaki, Shinichi; Satoh, Kotaro; Sawamura, Masaru; Shimada, Miho; Shinoe, Kenji; Shishido, Toshio; Tadano, Mikito; Takahashi, Takeshi; Takai, Ryota; Takenaka, Tateru; Tanimoto, Yasunori; Uchiyama, Takashi; Ueda, Akira; Umemori, Kensei; Watanabe, Ken; Yamamoto, Masahiro

2018-01-01

Energy-recovery linacs (ERLs) are promising for advanced synchrotron light sources, high-power free electron lasers (FELs), high-brightness gamma-ray sources, and electron-ion colliders. To demonstrate the critical technology of ERL-based light sources, we have designed and constructed a test accelerator, the compact ERL (cERL). Using advanced technology that includes a photocathode direct current (DC) electron gun and two types of 1.3-GHz-frequency superconducting cavities, the cERL was designed to be capable of recirculating low emittance (≤1 mm ṡ mrad) and high average-current (≥10 mA) electron beams while recovering the beam energy. During initial commissioning, the cERL demonstrated successful recirculation of high-quality beams with normalized transverse emittance of ∼0.14 mm ṡ mrad and momentum spread of ∼1.2 × 10-4 (rms) at a beam energy of 20 MeV and bunch charge below 100 fC. Energy recovery in the superconducting main linac was also demonstrated for high-average-current continuous-wave beams. These results constitute an important milestone toward realizing ERL-based light sources.

A combined emitter threat assessment method based on ICW-RCM

NASA Astrophysics Data System (ADS)

Zhang, Ying; Wang, Hongwei; Guo, Xiaotao; Wang, Yubing

2017-08-01

Considering that the tradition al emitter threat assessment methods are difficult to intuitively reflect the degree of target threaten and the deficiency of real-time and complexity, on the basis of radar chart method(RCM), an algorithm of emitter combined threat assessment based on ICW-RCM (improved combination weighting method, ICW) is proposed. The coarse sorting is integrated with fine sorting in emitter combined threat assessment, sequencing the emitter threat level roughly accordance to radar operation mode, and reducing task priority of the low-threat emitter; On the basis of ICW-RCM, sequencing the same radar operation mode emitter roughly, finally, obtain the results of emitter threat assessment through coarse and fine sorting. Simulation analyses show the correctness and effectiveness of this algorithm. Comparing with classical method of emitter threat assessment based on CW-RCM, the algorithm is visual in image and can work quickly with lower complexity.

Ultralow emittance, multi-MeV proton beams from a laser virtual-cathode plasma accelerator.

PubMed

Cowan, T E; Fuchs, J; Ruhl, H; Kemp, A; Audebert, P; Roth, M; Stephens, R; Barton, I; Blazevic, A; Brambrink, E; Cobble, J; Fernández, J; Gauthier, J-C; Geissel, M; Hegelich, M; Kaae, J; Karsch, S; Le Sage, G P; Letzring, S; Manclossi, M; Meyroneinc, S; Newkirk, A; Pépin, H; Renard-LeGalloudec, N

2004-05-21

The laminarity of high-current multi-MeV proton beams produced by irradiating thin metallic foils with ultraintense lasers has been measured. For proton energies >10 MeV, the transverse and longitudinal emittance are, respectively, <0.004 mm mrad and <10(-4) eV s, i.e., at least 100-fold and may be as much as 10(4)-fold better than conventional accelerator beams. The fast acceleration being electrostatic from an initially cold surface, only collisions with the accelerating fast electrons appear to limit the beam laminarity. The ion beam source size is measured to be <15 microm (FWHM) for proton energies >10 MeV.

Laser-photofield emission from needle cathodes for low-emittance electron beams.

PubMed

Ganter, R; Bakker, R; Gough, C; Leemann, S C; Paraliev, M; Pedrozzi, M; Le Pimpec, F; Schlott, V; Rivkin, L; Wrulich, A

2008-02-15

Illumination of a ZrC needle with short laser pulses (16 ps, 266 nm) while high voltage pulses (-60 kV, 2 ns, 30 Hz) are applied, produces photo-field emitted electron bunches. The electric field is high and varies rapidly over the needle surface so that quantum efficiency (QE) near the apex can be much higher than for a flat photocathode due to the Schottky effect. Up to 150 pC (2.9 A peak current) have been extracted by photo-field emission from a ZrC needle. The effective emitting area has an estimated radius below 50 microm leading to a theoretical intrinsic emittance below 0.05 mm mrad.

Threshold self-powered gamma detector for use as a monitor of power in a nuclear reactor

DOEpatents

LeVert, Francis E.; Cox, Samson A.

1978-01-01

A self-powered gamma monitor for placement near the core of a nuclear reactor comprises a lead prism surrounded by a coaxial thin nickel sheet, the combination forming a collector. A coaxial polyethylene electron barrier encloses the collector and is separated from the nickel sheet by a vacuum region. The electron barrier is enclosed by a coaxial stainless steel emitter which, in turn, is enclosed within a lead casing. When the detector is placed in a flux of gamma rays, a measure of the current flow in an external circuit between emitter and collector provides a measure of the power level of the reactor.

Theory of Carbon Nanotube (CNT)-Based Electron Field Emitters

PubMed Central

Bocharov, Grigory S.; Eletskii, Alexander V.

2013-01-01

Theoretical problems arising in connection with development and operation of electron field emitters on the basis of carbon nanotubes are reviewed. The physical aspects of electron field emission that underlie the unique emission properties of carbon nanotubes (CNTs) are considered. Physical effects and phenomena affecting the emission characteristics of CNT cathodes are analyzed. Effects given particular attention include: the electric field amplification near a CNT tip with taking into account the shape of the tip, the deviation from the vertical orientation of nanotubes and electrical field-induced alignment of those; electric field screening by neighboring nanotubes; statistical spread of the parameters of the individual CNTs comprising the cathode; the thermal effects resulting in degradation of nanotubes during emission. Simultaneous consideration of the above-listed effects permitted the development of the optimization procedure for CNT array in terms of the maximum reachable emission current density. In accordance with this procedure, the optimum inter-tube distance in the array depends on the region of the external voltage applied. The phenomenon of self-misalignment of nanotubes in an array has been predicted and analyzed in terms of the recent experiments performed. A mechanism of degradation of CNT-based electron field emitters has been analyzed consisting of the bombardment of the emitters by ions formed as a result of electron impact ionization of the residual gas molecules. PMID:28348342

PEP as a synchrotron radiation source (invited)

NASA Astrophysics Data System (ADS)

Bienenstock, A.; Brown, G.; Wiedemann, H.; Winick, H.

1989-07-01

The 16-GeV storage ring PEP has characteristics which enable it to operate in modes with very low emittance and to accommodate very long undulators, producing synchrotron radiation at x-ray wavelengths with extremely high brightness and coherent power. Two beamlines, each illuminated by a 2-m long, 77-mm period undulator magnet, are now operational and others are planned. In parasitic operation during colliding-beam runs at 14.5 GeV, these beamlines provide photons above 10 keV with a peak brightness of about 1016 photons/(s mm2 mrad2 ) within a 0.1% bandwidth. In low-emittance tests at 7.1 GeV, horizontal emittances of about 5 nm rad were measured, which is about the same as that planned for the new third-generation x-ray sources. With a current of 15 mA at 7.1 GeV, the present undulators deliver photon beams from 2.7 to 14 keV with a peak brightness of about 1017 . Higher performance levels are expected with the implementation of longer undulators and shorter period undulators. In the longer term, because of its large circumference and long straight sections, PEP could be further developed to achieve even higher performance levels with an emittance below 1 nm rad, very long undulators and picosecond bunches, resulting in one to two orders of magnitude higher brightness and coherent power.

Electrochemical formation of field emitters

DOEpatents

Bernhardt, Anthony F.

1999-01-01

Electrochemical formation of field emitters, particularly useful in the fabrication of flat panel displays. The fabrication involves field emitting points in a gated field emitter structure. Metal field emitters are formed by electroplating and the shape of the formed emitter is controlled by the potential imposed on the gate as well as on a separate counter electrode. This allows sharp emitters to be formed in a more inexpensive and manufacturable process than vacuum deposition processes used at present. The fabrication process involves etching of the gate metal and the dielectric layer down to the resistor layer, and then electroplating the etched area and forming an electroplated emitter point in the etched area.

Spectrally-engineered solar thermal photovoltaic devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lenert, Andrej; Bierman, David; Chan, Walker

A solar thermal photovoltaic device, and method of forming same, includes a solar absorber and a spectrally selective emitter formed on either side of a thermally conductive substrate. The solar absorber is configured to absorb incident solar radiation. The solar absorber and the spectrally selective emitter are configured with an optimized emitter-to-absorber area ratio. The solar thermal photovoltaic device also includes a photovoltaic cell in thermal communication with the spectrally selective emitter. The spectrally selective emitter is configured to permit high emittance for energies above a bandgap of the photovoltaic cell and configured to permit low emittance for energies belowmore » the bandgap.« less

Ultra-high Temperature Emittance Measurements for Space and Missile Applications

NASA Technical Reports Server (NTRS)

Rogers, Jan; Crandall, David

2009-01-01

Advanced modeling and design efforts for many aerospace components require high temperature emittance data. Applications requiring emittance data include propulsion systems, radiators, aeroshells, heatshields/thermal protection systems, and leading edge surfaces. The objective of this work is to provide emittance data at ultra-high temperatures. MSFC has a new instrument for the measurement of emittance at ultra-high temperatures, the Ultra-High Temperature Emissometer System (Ultra-HITEMS). AZ Technology Inc. developed the instrument, designed to provide emittance measurements over the temperature range 700-3500K. The Ultra-HITEMS instrument measures the emittance of samples, heated by lasers, in vacuum, using a blackbody source and a Fourier Transform Spectrometer. Detectors in a Nicolet 6700 FT-IR spectrometer measure emittance over the spectral range of 0.4-25 microns. Emitted energy from the specimen and output from a Mikron M390S blackbody source at the same temperature with matched collection geometry are measured. Integrating emittance over the spectral range yields the total emittance. The ratio provides a direct measure of total hemispherical emittance. Samples are heated using lasers. Optical pyrometry provides temperature data. Optical filters prevent interference from the heating lasers. Data for Inconel 718 show excellent agreement with results from literature and ASTM 835. Measurements taken from levitated spherical specimens provide total hemispherical emittance data; measurements taken from flat specimens mounted in the chamber provide near-normal emittance data. Data from selected characterization studies will be presented. The Ultra-HITEMS technique could advance space and missile technologies by advancing the knowledge base and the technology readiness level for ultra-high temperature materials.

Measurement of transverse emittance and coherence of double-gate field emitter array cathodes

PubMed Central

Tsujino, Soichiro; Das Kanungo, Prat; Monshipouri, Mahta; Lee, Chiwon; Miller, R.J. Dwayne

2016-01-01

Achieving small transverse beam emittance is important for high brightness cathodes for free electron lasers and electron diffraction and imaging experiments. Double-gate field emitter arrays with on-chip focussing electrode, operating with electrical switching or near infrared laser excitation, have been studied as cathodes that are competitive with photocathodes excited by ultraviolet lasers, but the experimental demonstration of the low emittance has been elusive. Here we demonstrate this for a field emitter array with an optimized double-gate structure by directly measuring the beam characteristics. Further we show the successful application of the double-gate field emitter array to observe the low-energy electron beam diffraction from suspended graphene in minimal setup. The observed low emittance and long coherence length are in good agreement with theory. These results demonstrate that our all-metal double-gate field emitters are highly promising for applications that demand extremely low-electron bunch-phase space volume and large transverse coherence. PMID:28008918

Measurement of transverse emittance and coherence of double-gate field emitter array cathodes

NASA Astrophysics Data System (ADS)

Tsujino, Soichiro; Das Kanungo, Prat; Monshipouri, Mahta; Lee, Chiwon; Miller, R. J. Dwayne

2016-12-01

Achieving small transverse beam emittance is important for high brightness cathodes for free electron lasers and electron diffraction and imaging experiments. Double-gate field emitter arrays with on-chip focussing electrode, operating with electrical switching or near infrared laser excitation, have been studied as cathodes that are competitive with photocathodes excited by ultraviolet lasers, but the experimental demonstration of the low emittance has been elusive. Here we demonstrate this for a field emitter array with an optimized double-gate structure by directly measuring the beam characteristics. Further we show the successful application of the double-gate field emitter array to observe the low-energy electron beam diffraction from suspended graphene in minimal setup. The observed low emittance and long coherence length are in good agreement with theory. These results demonstrate that our all-metal double-gate field emitters are highly promising for applications that demand extremely low-electron bunch-phase space volume and large transverse coherence.

Radiation tolerant compact image sensor using CdTe photodiode and field emitter array (Conference Presentation)

NASA Astrophysics Data System (ADS)

Masuzawa, Tomoaki; Neo, Yoichiro; Mimura, Hidenori; Okamoto, Tamotsu; Nagao, Masayoshi; Akiyoshi, Masafumi; Sato, Nobuhiro; Takagi, Ikuji; Tsuji, Hiroshi; Gotoh, Yasuhito

2016-10-01

A growing demand on incident detection is recognized since the Great East Japan Earthquake and successive accidents in Fukushima nuclear power plant in 2011. Radiation tolerant image sensors are powerful tools to collect crucial information at initial stages of such incidents. However, semiconductor based image sensors such as CMOS and CCD have limited tolerance to radiation exposure. Image sensors used in nuclear facilities are conventional vacuum tubes using thermal cathodes, which have large size and high power consumption. In this study, we propose a compact image sensor composed of a CdTe-based photodiode and a matrix-driven Spindt-type electron beam source called field emitter array (FEA). A basic principle of FEA-based image sensors is similar to conventional Vidicon type camera tubes, but its electron source is replaced from a thermal cathode to FEA. The use of a field emitter as an electron source should enable significant size reduction while maintaining high radiation tolerance. Current researches on radiation tolerant FEAs and development of CdTe based photoconductive films will be presented.

High-power laser diodes with high polarization purity

NASA Astrophysics Data System (ADS)

Rosenkrantz, Etai; Yanson, Dan; Peleg, Ophir; Blonder, Moshe; Rappaport, Noam; Klumel, Genady

2017-02-01

Fiber-coupled laser diode modules employ power scaling of single emitters for fiber laser pumping. To this end, techniques such as geometrical, spectral and polarization beam combining (PBC) are used. For PBC, linear polarization with high degree of purity is important, as any non-perfectly polarized light leads to losses and heating. Furthermore, PBC is typically performed in a collimated portion of the beams, which also cancels the angular dependence of the PBC element, e.g., beam-splitter. However, we discovered that single emitters have variable degrees of polarization, which depends both on the operating current and far-field divergence. We present data to show angle-resolved polarization measurements that correlate with the ignition of high-order modes in the slow-axis emission of the emitter. We demonstrate that the ultimate laser brightness includes not only the standard parameters such as power, emitting area and beam divergence, but also the degree of polarization (DoP), which is a strong function of the latter. Improved slow-axis divergence, therefore, contributes not only to high brightness but also high beam combining efficiency through polarization.

Light coupling for on-chip optical interconnects

NASA Astrophysics Data System (ADS)

Gao, Xumin; Yuan, Jialei; Yang, Yongchao; Li, Yuanhang; Cai, Wei; Li, Xin; Wang, Yongjin

2017-12-01

An on-chip optical interconnect of a light emitter, waveguide and photodetector based on p-n junction InGaN/GaN multiple quantum wells (MQWs) is fabricated to investigate the light coupling efficiency of suspended waveguides connecting the light emitter and photodetector. Optical characterizations indicate that the photocurrent of the photodetector is mainly induced by the emitted light that is transmitted through the waveguides. Suspended waveguides with and without air gaps are reported in this paper. A 1 mA current injection into the light emitter induces a photocurrent of 17.3 nA and 205.5 nA for the photodetector connected to the waveguides that with 10 μm air gaps and without air gaps, respectively. Finite-difference time-domain simulations are performed to analyze the gap effect on the coupling efficiency of the light transmission. Both the gap distance and the index variation of the gap materials are analyzed to verify the potential optical sensing functions of the on-chip optical interconnect. A possible strategy for increasing the light coupling efficiency is proven by simulations.

Discrete space charge affected field emission: Flat and hemisphere emitters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jensen, Kevin L., E-mail: kevin.jensen@nrl.navy.mil; Shiffler, Donald A.; Tang, Wilkin

Models of space-charge affected thermal-field emission from protrusions, able to incorporate the effects of both surface roughness and elongated field emitter structures in beam optics codes, are desirable but difficult. The models proposed here treat the meso-scale diode region separate from the micro-scale regions characteristic of the emission sites. The consequences of discrete emission events are given for both one-dimensional (sheets of charge) and three dimensional (rings of charge) models: in the former, results converge to steady state conditions found by theory (e.g., Rokhlenko et al. [J. Appl. Phys. 107, 014904 (2010)]) but show oscillatory structure as they do. Surfacemore » roughness or geometric features are handled using a ring of charge model, from which the image charges are found and used to modify the apex field and emitted current. The roughness model is shown to have additional constraints related to the discrete nature of electron charge. The ability of a unit cell model to treat field emitter structures and incorporate surface roughness effects inside a beam optics code is assessed.« less

Self-sensing of temperature rises on light emitting diode based optrodes

NASA Astrophysics Data System (ADS)

Dehkhoda, Fahimeh; Soltan, Ahmed; Ponon, Nikhil; Jackson, Andrew; O'Neill, Anthony; Degenaar, Patrick

2018-04-01

Objective. This work presents a method to determine the surface temperature of microphotonic medical implants like LEDs. Our inventive step is to use the photonic emitter (LED) employed in an implantable device as its own sensor and develop readout circuitry to accurately determine the surface temperature of the device. Approach. There are two primary classes of applications where microphotonics could be used in implantable devices; opto-electrophysiology and fluorescence sensing. In such scenarios, intense light needs to be delivered to the target. As blue wavelengths are scattered strongly in tissue, such delivery needs to be either via optic fibres, two-photon approaches or through local emitters. In the latter case, as light emitters generate heat, there is a potential for probe surfaces to exceed the 2 °C regulatory. However, currently, there are no convenient mechanisms to monitor this in situ. Main results. We present the electronic control circuit and calibration method to monitor the surface temperature change of implantable optrode. The efficacy is demonstrated in air, saline, and brain. Significance. This paper, therefore, presents a method to utilize the light emitting diode as its own temperature sensor.

Versatile benzimidazole/triphenylamine hybrids: efficient nondoped deep-blue electroluminescence and good host materials for phosphorescent emitters.

PubMed

Gong, Shaolong; Zhao, Yongbiao; Wang, Meng; Yang, Chuluo; Zhong, Cheng; Qin, Jingui; Ma, Dongge

2010-09-03

Two new bipolar compounds, N,N,N',N'-tetraphenyl-5'-(1-phenyl-1H-benzimidazol-2-yl)-1,1':3',1''-terphenyl-4,4''-diamine (1) and N,N,N',N'-tetraphenyl-5'-(1-phenyl-1H-benzimidazol-2-yl)-1,1':3',1''-terphenyl-3,3''-diamine (2), were synthesized and characterized, and their thermal, photophysical, and electrochemical properties were investigated. Compounds 1 and 2 possess good thermal stability with high glass-transition temperatures of 109-129 degrees C and thermal decomposition temperatures of 501-531 degrees C. The fluorescence quantum yield of 1 (0.52) is higher than that of 2 (0.16), which could be attributed to greater pi conjugation between the donor and acceptor moieties. A nondoped deep-blue fluorescent organic light-emitting diode (OLED) using 1 as the blue emitter displays high performance, with a maximum current efficiency of 2.2 cd A(-1) and a maximum external efficiency of 2.9 % at the CIE coordinates of (0.17, 0.07) that are very close to the National Television System Committee's blue standard (0.15, 0.07). Electrophosphorescent devices using the two compounds as host materials for green and red phosphor emitters show high efficiencies. The best performance of a green phosphorescent device was achieved using 2 as the host, with a maximum current efficiency of 64.3 cd A(-1) and a maximum power efficiency of 68.3 lm W(-1); whereas the best performance of a red phosphorescent device was achieved using 1 as the host, with a maximum current efficiency of 11.5 cd A(-1), and a maximum power efficiency of 9.8 lm W(-1). The relationship between the molecular structures and optoelectronic properties are discussed.

Effect of longitudinal aberration in an ion-optical system on the properties of a focused beam

DOE Office of Scientific and Technical Information (OSTI.GOV)

Getmanov, V.N.; Ikryanov, I.M.; Savchenko, O.Ya.

1994-11-01

Modelling of the processes involved in the passage of a beam through a system of high-voltage electrodes with allowance made for the thermal and grid spreads of transverse particle velocities constitutes a three-dimensional problem that is difficult to solve with modern computers. In the present work, an analytic method has been developed that reduces this problem to a two-dimensional one. The method corresponds to approximating a marked longitudinal aberration in an ion-optical system (IOS), when the effective emittance of the beam during its high-voltage shaping increases severalfold, this being characteristic of all IOS know thus far. Fully justified in thismore » case is the statement that a unique relationship exists between the coordinates r and z, which respectively characterize the location of the particle on the emitter and the point of intersection of the axis by the particle (or the point of maximum approach of the particle to the axis), and also between r and {alpha} ({alpha}being the angle between the particle trajectory in the focusing region and the axis of the system). This statement leads to a hyperbolic law of increase in current density in the central portion of the focused beam and thus confirms the validity of this law. The calculations were compared with experimental data on the focusing of a 0.4-MeV proton beam with a current of 20-75 mA and a diameter of 2-5 mm in the crossover under conditions in which the effective emittance of the beam, as a result of aberrations during its high-voltage shaping, increased by a factor of 3 or more (in kilovolts), and the calculated trajectories for 20 of 40 mm at the emitter are shown, where the markers D8 and D9 denote the positions of multiwire beam profile sensors.« less

Electrochemical formation of field emitters

DOEpatents

Bernhardt, A.F.

1999-03-16

Electrochemical formation of field emitters, particularly useful in the fabrication of flat panel displays is disclosed. The fabrication involves field emitting points in a gated field emitter structure. Metal field emitters are formed by electroplating and the shape of the formed emitter is controlled by the potential imposed on the gate as well as on a separate counter electrode. This allows sharp emitters to be formed in a more inexpensive and manufacturable process than vacuum deposition processes used at present. The fabrication process involves etching of the gate metal and the dielectric layer down to the resistor layer, and then electroplating the etched area and forming an electroplated emitter point in the etched area. 12 figs.

Emittance Theory for Cylindrical Fiber Selective Emitter

NASA Technical Reports Server (NTRS)

Chubb, Donald L.

1998-01-01

A fibrous rare earth selective emitter is approximated as an infinitely long cylinder. The spectral emittance, epsilon(lambda), is obtained by solving the radiative transfer equations with appropriate boundary conditions and uniform temperature. For optical depths, Kappa(R) = alpha(lambda)R, where alpha(lambda) is the extinction coefficient and R is the cylinder radius, greater than 1 the spectral emittance is nearly at its maximum value. There is an optimum cylinder radius, R(opt), for maximum emitter efficiency, eta(E). Values for R(opt) are strongly dependent on the number of emission bands of the material. The optimum radius decreases slowly with increasing emitter temperature, while the maximum efficiency and useful radiated power increase rapidly with increasing temperature.

Radial arrays of nano-electrospray ionization emitters and methods of forming electrosprays

DOEpatents

Kelly, Ryan T [West Richland, WA; Tang, Keqi [Richland, WA; Smith, Richard D [Richland, WA

2010-10-19

Electrospray ionization emitter arrays, as well as methods for forming electrosprays, are described. The arrays are characterized by a radial configuration of three or more nano-electrospray ionization emitters without an extractor electrode. The methods are characterized by distributing fluid flow of the liquid sample among three or more nano-electrospray ionization emitters, forming an electrospray at outlets of the emitters without utilizing an extractor electrode, and directing the electrosprays into an entrance to a mass spectrometry device. Each of the nano-electrospray ionization emitters can have a discrete channel for fluid flow. The nano-electrospray ionization emitters are circularly arranged such that each is shielded substantially equally from an electrospray-inducing electric field.

Thermal emittance from ionization-induced trapping in plasma accelerators

DOE PAGES

Schroeder, C.  B.; Vay, J. -L.; Esarey, E.; ...

2014-10-03

The minimum obtainable transverse emittance (thermal emittance) of electron beams generated and trapped in plasma-based accelerators using laser ionization injection is examined. The initial transverse phase space distribution following ionization and passage through the laser is derived, and expressions for the normalized transverse beam emittance, both along and orthogonal to the laser polarization, are presented. Results are compared to particle-in-cell simulations. Ultralow emittance beams can be generated using laser ionization injection into plasma accelerators, and examples are presented showing normalized emittances on the order of tens of nm.

A NOVEL TECHNIQUE FOR THE RAPID IDENTIFICATION OF ALPHA EMITTERS RELEASED DURING A RADIOLOGICAL INCIDENT.

EPA Science Inventory

Currently there are no standard radioanalytical methods applicable to the initial phase of a radiological emergency, for the early identification and quantification of alpha emitting radionuclides. Of particular interest are determinations of the presence and concentration of is...

Diagnostic for a high-repetition rate electron photo-gun and first measurements

NASA Astrophysics Data System (ADS)

Filippetto, D.; Doolittle, L.; Huang, G.; Norum, E.; Portmann, G.; Qian, H.; Sannibale, F.

2015-05-01

The APEX electron source at LBNL combines the high-repetition-rate with the high beam brightness typical of photoguns, delivering low emittance electron pulses at MHz frequency. Proving the high beam quality of the beam is an essential step for the success of the experiment, opening the doors of the high average power to brightness-hungry applications as X-Ray FELs, MHz ultrafast electron diffraction etc.. As first step, a complete characterization of the beam parameters is foreseen at the Gun beam energy of 750 keV. Diagnostics for low and high current measurements have been installed and tested, and measurements of cathode lifetime and thermal emittance in a RF environment with mA current performed. The recent installation of a double slit system, a deflecting cavity and a high precision spectrometer, allow the exploration of the full 6D phase space. Here we discuss the present layout of the machine and future upgrades, showing the latest results at low and high repetition rate, together with the tools and techniques used.

Ultra-Low-Power Cryogenic SiGe Low-Noise Amplifiers: Theory and Demonstration

NASA Astrophysics Data System (ADS)

Montazeri, Shirin; Wong, Wei-Ting; Coskun, Ahmet H.; Bardin, Joseph C.

2016-01-01

Low-power cryogenic low-noise amplifiers (LNAs) are desired to ease the cooling requirements of ultra-sensitive cryogenically cooled instrumentation. In this paper, the tradeoff between power and noise performance in silicon-germanium LNAs is explored to study the possibility of operating these devices from low supply voltages. A new small-signal heterojunction bipolar transistor noise model applicable to both the forward-active and saturation regimes is developed from first principles. Experimental measurements of a device across a wide range of temperatures are then presented and the dependence of the noise parameters on collector-emitter voltage is described. This paper concludes with the demonstration of a high-gain 1.8-3.6-GHz cryogenic LNA achieving a noise temperature of 3.4-5 K while consuming just 290 μW when operating at 15-K physical temperature.

High performance incandescent lighting using a selective emitter and nanophotonic filters

NASA Astrophysics Data System (ADS)

Leroy, Arny; Bhatia, Bikram; Wilke, Kyle; Ilic, Ognjen; Soljačić, Marin; Wang, Evelyn N.

2017-09-01

Previous approaches for improving the efficiency of incandescent light bulbs (ILBs) have relied on tailoring the emitted spectrum using cold-side interference filters that reflect the infrared energy back to the emitter while transmitting the visible light. While this approach has, in theory, potential to surpass light-emitting diodes (LEDs) in terms of luminous efficiency while conserving the excellent color rendering index (CRI) inherent to ILBs, challenges such as low view factor between the emitter and filter, high emitter (>2800 K) and filter temperatures and emitter evaporation have significantly limited the maximum efficiency. In this work, we first analyze the effect of non-idealities in the cold-side filter, the emitter and the view factor on the luminous efficiency. Second, we theoretically and experimentally demonstrate that the loss in efficiency associated with low view factors can be minimized by using a selective emitter (e.g., high emissivity in the visible and low emissivity in the infrared) with a filter. Finally, we discuss the challenges in achieving a high performance and long-lasting incandescent light source including the emitter and filter thermal stability as well as emitter evaporation.

Sharpening of field emitter tips using high-energy ions

DOEpatents

Musket, Ronald G.

1999-11-30

A process for sharpening arrays of field emitter tips of field emission cathodes, such as found in field-emission, flat-panel video displays. The process uses sputtering by high-energy (more than 30 keV) ions incident along or near the longitudinal axis of the field emitter to sharpen the emitter with a taper from the tip or top of the emitter down to the shank of the emitter. The process is particularly applicable to sharpening tips of emitters having cylindrical or similar (e.g., pyramidal) symmetry. The process will sharpen tips down to radii of less than 12 nm with an included angle of about 20 degrees. Because the ions are incident along or near the longitudinal axis of each emitter, the tips of gated arrays can be sharpened by high-energy ion beams rastered over the arrays using standard ion implantation equipment. While the process is particularly applicable for sharpening of arrays of field emitters in field-emission flat-panel displays, it can be effectively utilized in the fabrication of other vacuum microelectronic devices that rely on field emission of electrons.

Emissivity Tuned Emitter for RTPV Power Sources

DOE Office of Scientific and Technical Information (OSTI.GOV)

Carl M. Stoots; Robert C. O'Brien; Troy M. Howe

Every mission launched by NASA to the outer planets has produced unexpected results. The Voyager I and II, Galileo, and Cassini missions produced images and collected scientific data that totally revolutionized our understanding of the solar system and the formation of the planetary systems. These missions were enabled by the use of nuclear power. Because of the distances from the Sun, electrical power was produced using the radioactive decay of a plutonium isotope. Radioisotopic Thermoelectric Generators (RTGs) used in the past and currently used Multi-Mission RTGs (MMRTGs) provide power for space missions. Unfortunately, RTGs rely on thermocouples to convert heatmore » to electricity and are inherently inefficient ({approx} 3-7% thermal to electric efficiency). A Radioisotope Thermal Photovoltaic (RTPV) power source has the potential to reduce the specific mass of the onboard power supply by increasing the efficiency of thermal to electric conversion. In an RTPV, a radioisotope heats an emitter, which emits light to a photovoltaic (PV) cell, which converts the light into electricity. Developing an emitter tuned to the desired wavelength of the photovoltaic is a key part in increasing overall performance. Researchers at the NASA Glenn Research Center (GRC) have built a Thermal Photovoltaic (TPV) system, that utilizes a simulated General Purpose Heat Source (GPHS) from a MMRTG to heat a tantalum emitter. The GPHS is a block of graphite roughly 10 cm by 10 cm by 5 cm. A fully loaded GPHS produces 250 w of thermal power and weighs 1.6 kgs. The GRC system relies on the GPHS unit radiating at 1200 K to a tantalum emitter that, in turn, radiates light to a GaInAs photo-voltaic cell. The GRC claims system efficiency of conversion of 15%. The specific mass is around 167 kg/kWe. A RTPV power source that utilized a ceramic or ceramic-metal (cermet) matrix would allow for the combination of the heat source, canister, and emitter into one compact unit, and allow variation in size and shape to optimize temperature and emission spectra.« less

Analyses of Transistor Punchthrough Failures

NASA Technical Reports Server (NTRS)

Nicolas, David P.

1999-01-01

The failure of two transistors in the Altitude Switch Assembly for the Solid Rocket Booster followed by two additional failures a year later presented a challenge to failure analysts. These devices had successfully worked for many years on numerous missions. There was no history of failures with this type of device. Extensive checks of the test procedures gave no indication for a source of the cause. The devices were manufactured more than twenty years ago and failure information on this lot date code was not readily available. External visual exam, radiography, PEID, and leak testing were performed with nominal results Electrical testing indicated nearly identical base-emitter and base-collector characteristics (both forward and reverse) with a low resistance short emitter to collector. These characteristics are indicative of a classic failure mechanism called punchthrough. In failure analysis punchthrough refers to an condition where a relatively low voltage pulse causes the device to conduct very hard producing localized areas of thermal runaway or "hot spots". At one or more of these hot spots, the excessive currents melt the silicon. Heavily doped emitter material diffuses through the base region to the collector forming a diffusion pipe shorting the emitter to base to collector. Upon cooling, an alloy junction forms between the pipe and the base region. Generally, the hot spot (punch-through site) is under the bond and no surface artifact is visible. The devices were delidded and the internal structures were examined microscopically. The gold emitter lead was melted on one device, but others had anomalies in the metallization around the in-tact emitter bonds. The SEM examination confirmed some anomalies to be cosmetic defects while other anomalies were artifacts of the punchthrough site. Subsequent to these analyses, the contractor determined that some irregular testing procedures occurred at the time of the failures heretofore unreported. These testing irregularities involved the use of a breakout box and were the likely cause of the failures. There was no evidence to suggest a generic failure mechanism was responsible for the failure of these transistors.

Investigation of fundamental limits to beam brightness available from photoinjectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bazarov, Ivan

2015-07-09

The goal of this project was investigation of fundamental limits to beam brightness available from photoinjectors. This basic research in accelerator physics spanned over 5 years aiming to extend the fundamental understanding of high average current, low emittance sources of relativistic electrons based on photoemission guns, a necessary prerequisite for a new generation of coherent X-ray synchrotron radiation facilities based on continuous duty superconducting linacs. The program focused on two areas critical to making advances in the electron source performance: 1) the physics of photocathodes for the production of low emittance electrons and 2) control of space charge forces inmore » the immediate vicinity to the cathode via 3D laser pulse shaping.« less

Robust Low-Cost Cathode for Commercial Applications

NASA Technical Reports Server (NTRS)

Patterson, Michael J.

2007-01-01

Under funding from the NASA Commercial Technology Office, a cathode assembly was designed, developed, fabricated, and tested for use in plasma sources for ground-based materials processing applications. The cathode development activity relied on the large prior NASA investment and successful development of high-current, high-efficiency, long-life hollow cathodes for use on the International Space Station Plasma Contactor System. The hollow cathode was designed and fabricated based on known engineering criteria and manufacturing processes for compatibility with the requirements of the plasma source. The transfer of NASA GRC-developed hollow cathode technology for use as an electron emitter in the commercial plasma source is anticipated to yield a significant increase in process control, while eliminating the present issues of electron emitter lifetime and contamination.

Monolayer graphene-insulator-semiconductor emitter for large-area electron lithography

NASA Astrophysics Data System (ADS)

Kirley, Matthew P.; Aloui, Tanouir; Glass, Jeffrey T.

2017-06-01

The rapid adoption of nanotechnology in fields as varied as semiconductors, energy, and medicine requires the continual improvement of nanopatterning tools. Lithography is central to this evolving nanotechnology landscape, but current production systems are subject to high costs, low throughput, or low resolution. Herein, we present a solution to these problems with the use of monolayer graphene in a graphene-insulator-semiconductor (GIS) electron emitter device for large-area electron lithography. Our GIS device displayed high emission efficiency (up to 13%) and transferred large patterns (500 × 500 μm) with high fidelity (<50% spread). The performance of our device demonstrates a feasible path to dramatic improvements in lithographic patterning systems, enabling continued progress in existing industries and opening opportunities in nanomanufacturing.

Reliability and efficacy of organic passivation for polycrystalline silicon solar cells at room temperature

NASA Astrophysics Data System (ADS)

Shinde, Onkar S.; Funde, Adinath M.; Jadkar, Sandesh R.; Dusane, Rajiv O.; Dhere, Neelkanth G.; Ghaisas, Subhash V.

2016-09-01

Oleylamine is used as a passivating layer instead of commercial high temperature SiNx. Oleylamine coating applied on the n-type emitter side with p-type base polycrystalline silicon solar cells at room temperature using a simple spin coating method. It has been observed that there is 16% increase in efficiency after Oleylamine coating. Further, the solar cell was subjected to standard characterization namely current-voltage measurement for electrical parameters and Fourier transform infrared spectroscopy to understand the interaction of emitter surface and passivating Oleylamine. However, the passivation layer is not stable due to the reaction between Oleylamine and ambient air content such as humidity and carbon dioxide. This degradation can be prevented with suitable overcoating.

2D/3D image charge for modeling field emission

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jensen, Kevin L.; Shiffler, Donald A.; Harris, John R.

Analytic image charge approximations exist for planar and spherical metal surfaces but approximations for more complex geometries, such as the conical and wirelike structures characteristic of field emitters, are lacking. Such models are the basis for the evaluation of Schottky lowering factors in equations for current density. The development of a multidimensional image charge approximation, useful for a general thermal-field emission equation used in space charge studies, is given and based on an analytical model using a prolate spheroidal geometry. A description of how the model may be adapted to be used with a line charge model appropriate for carbonmore » nanotube and carbon fiber field emitters is discussed. [http://dx.doi.org/10.1116/1.4968007]« less

2D/3D image charge for modeling field emission

DOE PAGES

Jensen, Kevin L.; Shiffler, Donald A.; Harris, John R.; ...

2017-03-01

Analytic image charge approximations exist for planar and spherical metal surfaces but approximations for more complex geometries, such as the conical and wirelike structures characteristic of field emitters, are lacking. Such models are the basis for the evaluation of Schottky lowering factors in equations for current density. The development of a multidimensional image charge approximation, useful for a general thermal-field emission equation used in space charge studies, is given and based on an analytical model using a prolate spheroidal geometry. A description of how the model may be adapted to be used with a line charge model appropriate for carbonmore » nanotube and carbon fiber field emitters is discussed. [http://dx.doi.org/10.1116/1.4968007]« less

Synthesis, photophysical and electrochemical properties of a blue emitter with binaphthalene and carbazole units.

PubMed

Guo, Lixia; Wang, Xiaoju; Feng, Liheng

2018-08-05

A blue emitter, 3,3'-(2,2'-dimethoxy-[1,1'-binaphthalene]-6,6'-diyl)bis(9-benzyl-9H-carbazole), was synthesized by Suzuki coupling reaction. The photophysical properties of the emitter in solution were firstly investigated by UV-Vis absorption and fluorescence emission techniques. The results indicate that the emitter has excellent optical and electron transfer properties. The maximum absorption and emission peaks of the emitter are 302 nm and 406 nm with 67.4% fluorescence quantum yield in chloroform, respectively. Thermal stability study reveals that the emitter has a good thermal stability (Td > 330 °C, Tg > 160 °C). Electrochemical Redox properties of the emitters were measured by cyclic voltammetry, and the energy gaps of highest occupied molecular orbital and the lowest unoccupied molecular orbital levels are in good agreement with the results of theoretical calculation. Furthermore, the multilayer electrochemcial device with the emitter was fabricated and its properties were explored. The wavelength of electroluminescence for the device with this emitter locates at 428 nm. These results indicate the emitter as a deep blue-emitting material has promising application in organic light-emitting diode devices. Copyright © 2018 Elsevier B.V. All rights reserved.

Transistor-based interface circuitry

DOEpatents

Taubman, Matthew S [Richland, WA

2007-02-13

Among the embodiments of the present invention is an apparatus that includes a transistor, a servo device, and a current source. The servo device is operable to provide a common base mode of operation of the transistor by maintaining an approximately constant voltage level at the transistor base. The current source is operable to provide a bias current to the transistor. A first device provides an input signal to an electrical node positioned between the emitter of the transistor and the current source. A second device receives an output signal from the collector of the transistor.

Monolithic integration of a GaAlAs buried-heterostructure laser and a bipolar phototransistor

NASA Technical Reports Server (NTRS)

Bar-Chaim, N.; Harder, CH.; Margalit, S.; Yariv, A.; Katz, J.; Ury, I.

1982-01-01

A GaAlAs buried-heterostructure laser has been monolithically integrated with a bipolar phototransistor. The heterojunction transistor was formed by the regrowth of the burying layers of the laser. Typical threshold current values for the lasers were 30 mA. Common-emitter current gains for the phototransistor of 100-400 and light responsitivity of 75 A/W (for wavelengths of 0.82 micron) at collector current levels of 15 mA were obtained.

A study of the effect of in-line and perpendicular magnetic fields on beam characteristics of electron guns in medical linear accelerators.

PubMed

Constantin, Dragoş E; Fahrig, Rebecca; Keall, Paul J

2011-07-01

Using magnetic resonance imaging (MRI) for real-time guidance during radiotherapy is an active area of research and development. One aspect of the problem is the influence of the MRI scanner, modeled here as an external magnetic field, on the medical linear accelerator (linac) components. The present work characterizes the behavior of two medical linac electron guns with external magnetic fields for in-line and perpendicular orientations of the linac with respect to the MRI scanner. Two electron guns, Litton L-2087 and Varian VTC6364, are considered as representative models for this study. Emphasis was placed on the in-line design approach in which case the MRI scanner and the linac axes of symmetry coincide and assumes no magnetic shielding of the linac. For the in-line case, the magnetic field from a 0.5 T open MRI (GE Signa SP) magnet with a 60 cm gap between its poles was computed and used in full three dimensional (3D) space charge simulations, whereas for the perpendicular case the magnetic field was constant. For the in-line configuration, it is shown that the electron beam is not deflected from the axis of symmetry of the gun and the primary beam current does not vanish even at very high values of the magnetic field, e.g., 0.16 T. As the field strength increases, the primary beam current has an initial plateau of constant value after which its value decreases to a minimum corresponding to a field strength of approximately 0.06 T. After the minimum is reached, the current starts to increase slowly. For the case when the beam current computation is performed at the beam waist position the initial plateau ends at 0.016 T for Litton L-2087 and at 0.012 T for Varian VTC6364. The minimum value of the primary beam current is 27.5% of the initial value for Litton L-2087 and 22.9% of the initial value for Varian VTC6364. The minimum current is reached at 0.06 and 0.062 T for Litton L-2087 and Varian VTC6364, respectively. At 0.16 T the beam current increases to 40.2 and 31.4% from the original value of the current for Litton L-2087 and Varian VTC6364, respectively. In contrast, for the case when the electron gun is perpendicular to the magnetic field, the electron beam is deflected from the axis of symmetry even at small values of the magnetic field. As the strength of the magnetic field increases, so does the beam deflection, leading to a sharp decrease of the primary beam current which vanishes at about 0.007 T for Litton L-2087 and at 0.006 T for Varian VTC6364, respectively. At zero external field, the beam rms emittance computed at beam waist is 1.54 and 1.29n-mm-mrad for Litton L-2087 and Varian VTC6364, respectively. For the inline configuration, there are two particular values of the external field where the beam rms emittance reaches a minimum. Litton L-2087 rms emittance reaches a minimum of 0.72n and 2.01 n-mm-mrad at 0.026 and 0.132 T, respectively. Varian VTC6364 rms emittance reaches a minimum of 0.34n and 0.35n-mm-mrad at 0.028 and 0.14 T, respectively. Beam radius dependence on the external field is shown for the in-line configuration for both electron guns. 3D space charge simulation of two electron guns, Litton L-2087 and Varian VTC6364, were performed for in-line and perpendicular external magnetic fields. A consistent behavior of Pierce guns in external magnetic fields was proven. For the in-line configuration, the primary beam current does not vanish but a large reduction of beam current (up to 77.1%) is observed at higher field strengths; the beam directionality remains unchanged. It was shown that for a perpendicular configuration the current vanishes due to beam bending under the action of the Lorentz force. For in-line configuration it was determined that the rms beam emittance reaches two minima for relatively high values of the external magnetic field.

A study of the effect of in-line and perpendicular magnetic fields on beam characteristics of electron guns in medical linear accelerators

PubMed Central

Constantin, Dragoş E.; Fahrig, Rebecca; Keall, Paul J.

2011-01-01

Purpose: Using magnetic resonance imaging (MRI) for real-time guidance during radiotherapy is an active area of research and development. One aspect of the problem is the influence of the MRI scanner, modeled here as an external magnetic field, on the medical linear accelerator (linac) components. The present work characterizes the behavior of two medical linac electron guns with external magnetic fields for in-line and perpendicular orientations of the linac with respect to the MRI scanner. Methods: Two electron guns, Litton L-2087 and Varian VTC6364, are considered as representative models for this study. Emphasis was placed on the in-line design approach in which case the MRI scanner and the linac axes of symmetry coincide and assumes no magnetic shielding of the linac. For the in-line case, the magnetic field from a 0.5 T open MRI (GE Signa SP) magnet with a 60 cm gap between its poles was computed and used in full three dimensional (3D) space charge simulations, whereas for the perpendicular case the magnetic field was constant. Results: For the in-line configuration, it is shown that the electron beam is not deflected from the axis of symmetry of the gun and the primary beam current does not vanish even at very high values of the magnetic field, e.g., 0.16 T. As the field strength increases, the primary beam current has an initial plateau of constant value after which its value decreases to a minimum corresponding to a field strength of approximately 0.06 T. After the minimum is reached, the current starts to increase slowly. For the case when the beam current computation is performed at the beam waist position the initial plateau ends at 0.016 T for Litton L-2087 and at 0.012 T for Varian VTC6364. The minimum value of the primary beam current is 27.5% of the initial value for Litton L-2087 and 22.9% of the initial value for Varian VTC6364. The minimum current is reached at 0.06 and 0.062 T for Litton L-2087 and Varian VTC6364, respectively. At 0.16 T the beam current increases to 40.2 and 31.4% from the original value of the current for Litton L-2087 and Varian VTC6364, respectively. In contrast, for the case when the electron gun is perpendicular to the magnetic field, the electron beam is deflected from the axis of symmetry even at small values of the magnetic field. As the strength of the magnetic field increases, so does the beam deflection, leading to a sharp decrease of the primary beam current which vanishes at about 0.007 T for Litton L-2087 and at 0.006 T for Varian VTC6364, respectively. At zero external field, the beam rms emittance computed at beam waist is 1.54 and 1.29π-mm-mrad for Litton L-2087 and Varian VTC6364, respectively. For the in-line configuration, there are two particular values of the external field where the beam rms emittance reaches a minimum. Litton L-2087 rms emittance reaches a minimum of 0.72π and 2.01π-mm-mrad at 0.026 and 0.132 T, respectively. Varian VTC6364 rms emittance reaches a minimum of 0.34π and 0.35π-mm-mrad at 0.028 and 0.14 T, respectively. Beam radius dependence on the external field is shown for the in-line configuration for both electron guns. Conclusions: 3D space charge simulation of two electron guns, Litton L-2087 and Varian VTC6364, were performed for in-line and perpendicular external magnetic fields. A consistent behavior of Pierce guns in external magnetic fields was proven. For the in-line configuration, the primary beam current does not vanish but a large reduction of beam current (up to 77.1%) is observed at higher field strengths; the beam directionality remains unchanged. It was shown that for a perpendicular configuration the current vanishes due to beam bending under the action of the Lorentz force. For in-line configuration it was determined that the rms beam emittance reaches two minima for relatively high values of the external magnetic field. PMID:21859019

Low-frequency noise behavior of polysilicon emitter bipolar junction transistors: a review

NASA Astrophysics Data System (ADS)

Deen, M. Jamal; Pascal, Fabien

2003-05-01

For many analog integrated circuit applications, the polysilicon emitter bipolar junction transistor (PE-BJT) is still the preferred choice because of its higher operational frequency and lower noise performance characteristics compared to MOS transistors of similar active areas and at similar biasing currents. In this paper, we begin by motivating the reader with reasons why bipolar transistors are still of great interest for analog integrated circuits. This motivation includes a comparison between BJT and the MOSFET using a simple small-signal equivalent circuit to derive important parameters that can be used to compare these two technologies. An extensive review of the popular theories used to explain low frequency noise results is presented. However, in almost all instances, these theories have not been fully tested. The effects of different processing technologies and conditions on the noise performance of PE-BJTs is reviewed and a summary of some of the key technological steps and device parameters and their effects on noise is discussed. The effects of temperature and emitter geometries scaling is reviewed. It is shown that dispersion of the low frequency noise in ultra-small geometries is a serious issue since the rate of increase of the noise dispersion is faster than the noise itself as the emitter geometry is scaled to smaller values. Finally, some ideas for future research on PE-BJTs, some of which are also applicable to SiGe heteorjunction bipolar transistors and MOSFETs, are presented after the conclusions.

Amorphous-diamond electron emitter

DOEpatents

Falabella, Steven

2001-01-01

An electron emitter comprising a textured silicon wafer overcoated with a thin (200 .ANG.) layer of nitrogen-doped, amorphous-diamond (a:D-N), which lowers the field below 20 volts/micrometer have been demonstrated using this emitter compared to uncoated or diamond coated emitters wherein the emission is at fields of nearly 60 volts/micrometer. The silicon/nitrogen-doped, amorphous-diamond (Si/a:D-N) emitter may be produced by overcoating a textured silicon wafer with amorphous-diamond (a:D) in a nitrogen atmosphere using a filtered cathodic-arc system. The enhanced performance of the Si/a:D-N emitter lowers the voltages required to the point where field-emission displays are practical. Thus, this emitter can be used, for example, in flat-panel emission displays (FEDs), and cold-cathode vacuum electronics.

Rare Earth Doped Yttrium Aluminum Garnet (YAG) Selective Emitters

NASA Technical Reports Server (NTRS)

Chubb, Donald L.; Pal, AnnaMarie T.; Patton, Martin O.; Jenkins, Phillip P.

1999-01-01

As a result of their electron structure, rare earth ions in crystals at high temperature emit radiation in several narrow bands rather than in a continuous blackbody manner. This study presents a spectral emittance model for films and cylinders of rare earth doped yttrium aluminum garnets. Good agreement between experimental and theoretical film spectral emittances was found for erbium and holmium aluminum garnets. Spectral emittances of films are sensitive to temperature differences across the film. For operating conditions of interest, the film emitter experiences a linear temperature variation whereas the cylinder emitter has a more advantageous uniform temperature. Emitter efficiency is also a sensitive function of temperature. For holminum aluminum garnet film the efficiency is 0.35 at 1446K but only 0.27 at 1270 K.

Emittance Theory for Cylindrical Fiber Selective Emitter

NASA Technical Reports Server (NTRS)

Chubb, Donald L.

1998-01-01

A fibrous rare earth selective emitter is approximated as an infinitely long, cylinder. The spectral emittance, e(sub x), is obtained L- by solving the radiative transfer equations with appropriate boundary conditions and uniform temperature. For optical depth, K(sub R), where alpha(sub lambda), is the extinction coefficient and R is the cylinder radius, greater than 1 the spectral emittance depths, K(sub R) alpha(sub lambda)R, is nearly at its maximum value. There is an optimum cylinder radius, R(sub opt) for maximum emitter efficiency, n(sub E). Values for R(sub opt) are strongly dependent on the number of emission bands of the material. The optimum radius decreases slowly with increasing emitter temperature, while the maximum efficiency and useful radiated power increase rapidly with increasing, temperature.

Method for photon activation positron annihilation analysis

DOEpatents

Akers, Douglas W.

2006-06-06

A non-destructive testing method comprises providing a specimen having at least one positron emitter therein; determining a threshold energy for activating the positron emitter; and determining whether a half-life of the positron emitter is less than a selected half-life. If the half-life of the positron emitter is greater than or equal to the selected half-life, then activating the positron emitter by bombarding the specimen with photons having energies greater than the threshold energy and detecting gamma rays produced by annihilation of positrons in the specimen. If the half-life of the positron emitter is less then the selected half-life, then alternately activating the positron emitter by bombarding the specimen with photons having energies greater then the threshold energy and detecting gamma rays produced by positron annihilation within the specimen.

Development of a numerical model for the electric current in burner-stabilised methane-air flames

NASA Astrophysics Data System (ADS)

Speelman, N.; de Goey, L. P. H.; van Oijen, J. A.

2015-03-01

This study presents a new model to simulate the electric behaviour of one-dimensional ionised flames and to predict the electric currents in these flames. The model utilises Poisson's equation to compute the electric potential. A multi-component diffusion model, including the influence of an electric field, is used to model the diffusion of neutral and charged species. The model is incorporated into the existing CHEM1D flame simulation software. A comparison between the computed electric currents and experimental values from the literature shows good qualitative agreement for the voltage-current characteristic. Physical phenomena, such as saturation and the diodic effect, are captured by the model. The dependence of the saturation current on the equivalence ratio is also captured well for equivalence ratios between 0.6 and 1.2. Simulations show a clear relation between the saturation current and the total number of charged particles created. The model shows that the potential at which the electric field saturates is strongly dependent on the recombination rate and the diffusivity of the charged particles. The onset of saturation occurs because most created charged particles are withdrawn from the flame and because the electric field effects start dominating over mass based diffusion. It is shown that this knowledge can be used to optimise ionisation chemistry mechanisms. It is shown numerically that the so-called diodic effect is caused primarily by the distance the heavier cations have to travel to the cathode.

Demonstration and properties of a planar heterojunction bipolar transistor with lateral current flow

NASA Astrophysics Data System (ADS)

Thornton, Robert L.; Mosby, William J.; Chung, Harlan F.

1989-10-01

The authors present fabrication techniques and device performance for a novel transistor structure, the lateral heterojunction bipolar transistor. The lateral heterojunctions are formed by impurity-induced disordering of a GaAs base layer sandwiched between two AlGaAs layers. These transistor structures exhibit current gains of 14 for base widths of 0.74 micron. Transistor action in this device occurs parallel to the surface of the device structure. The active base region of the structure is completely submerged, resulting in a reduction of surface recombination as a mechanism for gain reduction in the device. Impurity-induced disordering is used to widen the bandgap of the alloy in the emitter and collector, resulting in an improvement of the emitter injection efficiency. Since the device is based entirely on a surface diffusion process, the device is completely planar and has no steps involving etching of the III-V alloy material. These advantages lead this device to be considered as a candidate for optoelectronic integration applications. The transistor device functions as a buried heterostructure laser, with a threshold current as low as 6 mA for a 1.4-micron stripe.

Selective far-field addressing of coupled quantum dots in a plasmonic nanocavity.

PubMed

Tang, Jianwei; Xia, Juan; Fang, Maodong; Bao, Fanglin; Cao, Guanjun; Shen, Jianqi; Evans, Julian; He, Sailing

2018-04-27

Plasmon-emitter hybrid nanocavity systems exhibit strong plasmon-exciton interactions at the single-emitter level, showing great potential as testbeds and building blocks for quantum optics and informatics. However, reported experiments involve only one addressable emitting site, which limits their relevance for many fundamental questions and devices involving interactions among emitters. Here we open up this critical degree of freedom by demonstrating selective far-field excitation and detection of two coupled quantum dot emitters in a U-shaped gold nanostructure. The gold nanostructure functions as a nanocavity to enhance emitter interactions and a nanoantenna to make the emitters selectively excitable and detectable. When we selectively excite or detect either emitter, we observe photon emission predominantly from the target emitter with up to 132-fold Purcell-enhanced emission rate, indicating individual addressability and strong plasmon-exciton interactions. Our work represents a step towards a broad class of plasmonic devices that will enable faster, more compact optics, communication and computation.

Vacuum Microelectronic Field Emission Array Devices for Microwave Amplification.

NASA Astrophysics Data System (ADS)

Mancusi, Joseph Edward

This dissertation presents the design, analysis, and measurement of vacuum microelectronic devices which use field emission to extract an electron current from arrays of silicon cones. The arrays of regularly-spaced silicon cones, the field emission cathodes or emitters, are fabricated with an integrated gate electrode which controls the electric field at the tip of the cone, and thus the electron current. An anode or collector electrode is placed above the array to collect the emission current. These arrays, which are fabricated in a standard silicon processing facility, are developed for use as high power microwave amplifiers. Field emission has been studied extensively since it was first characterized in 1928, however due to the large electric fields required practical field emission devices are difficult to make. With the development of the semiconductor industry came the development of fabrication equipment and techniques which allow for the manufacture of the precision micron-scale structures necessary for practical field emission devices. The active region of a field emission device is a vacuum, therefore the electron travel is ballistic. This analysis of field emission devices includes electric field and electron emission modeling, development of a device equivalent circuit, analysis of the parameters in the equivalent circuit, and device testing. Variations in device structure are taken into account using a statistical model based upon device measurements. Measurements of silicon field emitter arrays at DC and RF are presented and analyzed. In this dissertation, the equivalent circuit is developed from the analysis of the device structure. The circuit parameters are calculated from geometrical considerations and material properties, or are determined from device measurements. It is necessary to include the emitter resistance in the equivalent circuit model since relatively high resistivity silicon wafers are used. As is demonstrated, the circuit model accurately predicts the magnitude of the emission current at a number of typical bias current levels when the device is operating at frequencies within the range of 10 MHz to 1 GHz. At low frequencies and at high frequencies within this range, certain parameters are negligible, and simplifications may be made in the equivalent circuit model.

Prototype of a subsurface drip irrigation emitter: Manufacturing, hydraulic evaluation and experimental analyses

NASA Astrophysics Data System (ADS)

Souza, Wanderley De Jesus; Rodrigues Sinobas, Leonor; Sánchez, Raúl; Arriel Botrel, Tarlei; Duarte Coelho, Rubens

2013-04-01

Root and soil intrusion into the conventional emitters is one of the major disadvantages to obtain a good uniformity of water application in subsurface drip irrigation (SDI). In the last years, there have been different approaches to reduce these problems such as the impregnation of emitters with herbicide, and the search for an emitter geometry impairing the intrusion of small roots. Within the last this study, has developed and evaluated an emitter model which geometry shows specific physical features to prevent emitter clogging. This work was developed at the Biosystems Engineering Department at ESALQ-USP/Brazil, and it is a part of a research in which an innovated emitteŕs model for SDI has been developed to prevent root and soil particles intrusion. An emitter with a mechanical-hydraulic mechanism (opening and closing the water outlet) for SDI was developed and manufactured using a mechanical lathe process. It was composed by a silicon elastic membrane a polyethylene tube and a Vnyl Polychloride membrane protector system. In this study the performance of the developed prototype was assessed in the laboratory and in the field conditions. In the laboratory, uniformity of water application was calculated by the water emission uniformity coefficient (CUE), and the manufacturer's coefficient of variation (CVm). In addition, variation in the membrane diameter submitted to internal pressures; head losses along the membrane, using the energy equation; and, precision and accuracy of the equation model, analyzed by Pearson's correlation coefficient (r), and by Willmott's concordance index (d) were also calculated with samples of the developed emitters. In the field, the emitters were installed in pots with and without sugar cane culture from October 2010 to January 2012. During this time, flow rate in 20 emitters were measured periodically, and the aspects of them about clogging at the end of the experiment. Emitters flow rates were measured quarterly to calculate: relative flow rate (QR); flow disturbance (FD); CUE; and, variation coefficient of relative flow (CVQR). In the laboratory, both "CVm" and "CUE" were small since emitters were manufactured manually, the manufacturing variation was higher than in processed emitters. Variation in the membrane diameter decreased 1/4.5 from the central toward to the emitter end; and, the head loss increased. Estimated pressures were in good agreement to the observed ones with r and d values of 0.95, and 0.85, respectively. In the field tests, coefficients CVQR and QR were variable showing a poor classification according with ABNT (1986) and Solomon (1984). FD values were ranged between 11 and 24%and there was no observed clogging by roots and/or soil intrusion at the end of the experiment. On the other hand, emitter's flows were close to the average, indicating that water application kept according to the initial results. This study shows the suitability of this emitter model to prevent root and soil intrusion within the research conditions however further studies would be needed assessing the membrane performance, emitter physical characteristics, and control of emitter flow rate in order to develop the final prototype.

Fault location in optical networks

DOEpatents

Stevens, Rick C [Apple Valley, MN; Kryzak, Charles J [Mendota Heights, MN; Keeler, Gordon A [Albuquerque, NM; Serkland, Darwin K [Albuquerque, NM; Geib, Kent M [Tijeras, NM; Kornrumpf, William P [Schenectady, NY

2008-07-01

One apparatus embodiment includes an optical emitter and a photodetector. At least a portion of the optical emitter extends a radial distance from a center point. The photodetector provided around at least a portion of the optical emitter and positioned outside the radial distance of the portion of the optical emitter.

A new evaluation method of electron optical performance of high beam current probe forming systems.

PubMed

Fujita, Shin; Shimoyama, Hiroshi

2005-10-01

A new numerical simulation method is presented for the electron optical property analysis of probe forming systems with point cathode guns such as cold field emitters and the Schottky emitters. It has long been recognized that the gun aberrations are important parameters to be considered since the intrinsically high brightness of the point cathode gun is reduced due to its spherical aberration. The simulation method can evaluate the 'threshold beam current I(th)' above which the apparent brightness starts to decrease from the intrinsic value. It is found that the threshold depends on the 'electron gun focal length' as well as on the spherical aberration of the gun. Formulas are presented to estimate the brightness reduction as a function of the beam current. The gun brightness reduction must be included when the probe property (the relation between the beam current l(b) and the probe size on the sample, d) of the entire electron optical column is evaluated. Formulas that explicitly consider the gun aberrations into account are presented. It is shown that the probe property curve consists of three segments in the order of increasing beam current: (i) the constant probe size region, (ii) the brightness limited region where the probe size increases as d approximately I(b)(3/8), and (iii) the angular current intensity limited region in which the beam size increases rapidly as d approximately I(b)(3/2). Some strategies are suggested to increase the threshold beam current and to extend the effective beam current range of the point cathode gun into micro ampere regime.

GaN Nanowire Devices: Fabrication and Characterization

NASA Astrophysics Data System (ADS)

Scott, Reum

The development of microelectronics in the last 25 years has been characterized by an exponential increase of the bit density in integrated circuits (ICs) with time. Scaling solid-state devices improves cost, performance, and power; as such, it is of particular interest for companies, who gain a market advantage with the latest technology. As a result, the microelectronics industry has driven transistor feature size scaling from 10 μm to ~30 nm during the past 40 years. This trend has persisted for 40 years due to optimization, new processing techniques, device structures, and materials. But when noting processor speeds from the 1970's to 2009 and then again in 2010, the implication would be that the trend has ceased. To address the challenge of shrinking the integrated circuit (IC), current research is centered on identifying new materials and devices that can supplement and/or potentially supplant it. Bottom-up methods tailor nanoscale building blocks---atoms, molecules, quantum dots, and nanowires (NWs)---to be used to overcome these limitations. The Group IIIA nitrides (InN, AlN, and GaN) possess appealing properties such as a direct band gap spanning the whole solar spectrum, high saturation velocity, and high breakdown electric field. As a result nanostructures and nanodevices made from GaN and related nitrides are suitable candidates for efficient nanoscale UV/ visible light emitters, detectors, and gas sensors. To produce devices with such small structures new fabrication methods must be implemented. Devices composed of GaN nanowires were fabricated using photolithography and electron beam lithography. The IV characteristics of these devices were noted under different illuminations and the current tripled from 4.8*10-7 A to 1.59*10 -6 A under UV light which persisted for at least 5hrs.

Hybrid emitter all back contact solar cell

DOEpatents

Loscutoff, Paul; Rim, Seung

2016-04-12

An all back contact solar cell has a hybrid emitter design. The solar cell has a thin dielectric layer formed on a backside surface of a single crystalline silicon substrate. One emitter of the solar cell is made of doped polycrystalline silicon that is formed on the thin dielectric layer. The other emitter of the solar cell is formed in the single crystalline silicon substrate and is made of doped single crystalline silicon. The solar cell includes contact holes that allow metal contacts to connect to corresponding emitters.

JPRS Report, Science & Technology, USSR: Materials Science

DTIC Science & Technology

1988-01-11

Materials Scientific Research Instil; MoLow] neat-resiltan? !^erimental"»<* of single crystals of the ZhS6F neat resistant alloy was made for the...Filimonov, and V. L. Chakhlov, Electron Introscopy Scientific Research Institute, Tomsk] [Abstract] A small betatron operating in the pulse mode...a radiation source, a generator of current pulses, and a control panel. Current pulses with a repetition rate up to 200 Hz energize the emitter

Photovoltaic and thermophotovoltaic devices with quantum barriers

DOEpatents

Wernsman, Bernard R [Jefferson Hills, PA

2007-04-10

A photovoltaic or thermophotovoltaic device includes a diode formed by p-type material and n-type material joined at a p-n junction and including a depletion region adjacent to said p-n junction, and a quantum barrier disposed near or in the depletion region of the p-n junction so as to decrease device reverse saturation current density while maintaining device short circuit current density. In one embodiment, the quantum barrier is disposed on the n-type material side of the p-n junction and decreases the reverse saturation current density due to electrons while in another, the barrier is disposed on the p-type material side of the p-n junction and decreases the reverse saturation current density due to holes. In another embodiment, both types of quantum barriers are used.

Measuring Beam Sizes and Ultra-Small Electron Emittances Using an X-ray Pinhole Camera.

PubMed

Elleaume, P; Fortgang, C; Penel, C; Tarazona, E

1995-09-01

A very simple pinhole camera set-up has been built to diagnose the electron beam emittance of the ESRF. The pinhole is placed in the air next to an Al window. An image is obtained with a CCD camera imaging a fluorescent screen. The emittance is deduced from the size of the image. The relationship between the measured beam size and the electron beam emittance depends upon the lattice functions alpha, beta and eta, the screen resolution, pinhole size and photon beam divergence. The set-up is capable of measuring emittances as low as 5 pm rad and is presently routinely used as both an electron beam imaging device and an emittance diagnostic.

Beam Dynamics Simulation of Photocathode RF Electron Gun at the PBP-CMU Linac Laboratory

NASA Astrophysics Data System (ADS)

Buakor, K.; Rimjaem, S.

2017-09-01

Photocathode radio-frequency (RF) electron guns are widely used at many particle accelerator laboratories due to high quality of produced electron beams. By using a short-pulse laser to induce the photoemission process, the electrons are emitted with low energy spread. Moreover, the photocathode RF guns are not suffered from the electron back bombardment effect, which can cause the limited electron current and accelerated energy. In this research, we aim to develop the photocathode RF gun for the linac-based THz radiation source. Its design is based on the existing gun at the PBP-CMU Linac Laboratory. The gun consists of a one and a half cell S-band standing-wave RF cavities with a maximum electric field of about 60 MV/m at the centre of the full cell. We study the beam dynamics of electrons traveling through the electromagnetic field inside the RF gun by using the particle tracking program ASTRA. The laser properties i.e. transverse size and injecting phase are optimized to obtain low transverse emittance. In addition, the solenoid magnet is applied for beam focusing and emittance compensation. The proper solenoid magnetic field is then investigated to find the optimum value for proper emittance conservation condition.

Nonlinear optical effects in semi-polar GaN micro-cavity emitter

NASA Astrophysics Data System (ADS)

Butler, Sween; Jiang, Hongxing; Lin, Jingyu; Neogi, Arup

Nonlinear optical (NLO) response of low dimensional emitters is of current interest because of the need for active elements in photonic applications. NLO effects in a selectively grown array of semi-polar GaN microcavity structures offer a promising route toward devices for integrated optical circuitry in optoelectronics and photonics field. Localized spatial excitation of a single hexagonal GaN microcavity with semipolar facets formed by selective area growth was optimized for nonlinear optical light generation due to second harmonic generation (SHG) and multi-photon luminescence(MPL). Multi-photon transition induced by tightly focused femtosecond NIR incident field results in ultra-violet and yellow luminescence for excitations above and below half bandgap energy, whereas SHG was observed for below half bandgap energy. We show that color and coherence of the light generation from the emitter can be controlled by selective onset of the nonlinear process which depends not only on the incident laser energy and intensity but also on the geometry of the microcavity. Quasi-WGM like modes were observed for off-resonant excitations from the GaN microcavity resulting in enhanced SHG. The directionality of MPL and SHG will be presented as a function of the pump polarization.

Parallel mapping of optical near-field interactions by molecular motor-driven quantum dots.

PubMed

Groß, Heiko; Heil, Hannah S; Ehrig, Jens; Schwarz, Friedrich W; Hecht, Bert; Diez, Stefan

2018-04-30

In the vicinity of metallic nanostructures, absorption and emission rates of optical emitters can be modulated by several orders of magnitude 1,2 . Control of such near-field light-matter interaction is essential for applications in biosensing 3 , light harvesting 4 and quantum communication 5,6 and requires precise mapping of optical near-field interactions, for which single-emitter probes are promising candidates 7-11 . However, currently available techniques are limited in terms of throughput, resolution and/or non-invasiveness. Here, we present an approach for the parallel mapping of optical near-field interactions with a resolution of <5 nm using surface-bound motor proteins to transport microtubules carrying single emitters (quantum dots). The deterministic motion of the quantum dots allows for the interpolation of their tracked positions, resulting in an increased spatial resolution and a suppression of localization artefacts. We apply this method to map the near-field distribution of nanoslits engraved into gold layers and find an excellent agreement with finite-difference time-domain simulations. Our technique can be readily applied to a variety of surfaces for scalable, nanometre-resolved and artefact-free near-field mapping using conventional wide-field microscopes.

Extension of the general thermal field equation for nanosized emitters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kyritsakis, A., E-mail: akyritsos1@gmail.com; Xanthakis, J. P.

2016-01-28

During the previous decade, Jensen et al. developed a general analytical model that successfully describes electron emission from metals both in the field and thermionic regimes, as well as in the transition region. In that development, the standard image corrected triangular potential barrier was used. This barrier model is valid only for planar surfaces and therefore cannot be used in general for modern nanometric emitters. In a recent publication, the authors showed that the standard Fowler-Nordheim theory can be generalized for highly curved emitters if a quadratic term is included to the potential model. In this paper, we extend thismore » generalization for high temperatures and include both the thermal and intermediate regimes. This is achieved by applying the general method developed by Jensen to the quadratic barrier model of our previous publication. We obtain results that are in good agreement with fully numerical calculations for radii R > 4 nm, while our calculated current density differs by a factor up to 27 from the one predicted by the Jensen's standard General-Thermal-Field (GTF) equation. Our extended GTF equation has application to modern sharp electron sources, beam simulation models, and vacuum breakdown theory.« less

Emission Testing Results of Thermally Stable, Metamaterial, Selective-Emitters for Thermophotovoltaics

NASA Astrophysics Data System (ADS)

Levinson, Katherine; Naka, Norihito; Pfiester, Nicole; Licht, Abigail; Vandervelde, Tom

2015-03-01

In thermophotovoltaics, the energy from a heated emitter is converted to electricity by a photovoltaic diode. A selective emitter can be used to emit a narrow band of wavelengths tailored to the bandgap of the photovoltaic diode. This spectral shaping improves the conversion efficiency of the diode and reduces undesirable diode heating. In our research, we study selective emitters based on metamaterials composed of repeating nanoscale structures. The emission characteristics of these materials vary based on the compositional structure, allowing the emitted spectrum to be tunable. Simulations were performed with CST Microwave Studio to design emitters with peak wavelengths ranging from 1-10 microns. The structures were then fabricated using physical vapor deposition and electron beam lithography on a sapphire substrate. Emitter materials studied include gold, platinum, and iridium. Here we report on the emission spectra of the selective emitters and the post-heating structural integrity.

An MR-compliant phased-array HIFU transducer with augmented steering range, dedicated to abdominal thermotherapy

NASA Astrophysics Data System (ADS)

Auboiroux, Vincent; Dumont, Erik; Petrusca, Lorena; Viallon, Magalie; Salomir, Rares

2011-06-01

A novel architecture for a phased-array high intensity focused ultrasound (HIFU) device was investigated, aiming to increase the capabilities of electronic steering without reducing the size of the elementary emitters. The principal medical application expected to benefit from these developments is the time-effective sonication of large tumours in moving organs. The underlying principle consists of dividing the full array of transducers into multiple sub-arrays of different resonance frequencies, with the reorientation of these individual emitters, such that each sub-array can focus within a given spatial zone. To enable magnetic resonance (MR) compatibility of the device and the number of output channels from the RF generator to be halved, a passive spectral multiplexing technique was used, consisting of parallel wiring of frequency-shifted paired piezoceramic emitters with intrinsic narrow-band response. Two families of 64 emitters (circular, 5 mm diameter) were mounted, with optimum efficiency at 0.96 and 1.03 MHz, respectively. Two different prototypes of the HIFU device were built and tested, each incorporating the same two families of emitters, but differing in the shape of the rapid prototyping plastic support that accommodated the transducers (spherical cap with radius of curvature/aperture of 130 mm/150 mm and, respectively, 80 mm/110 mm). Acoustic measurements, MR-acoustic radiation force imaging (ex vivo) and MR-thermometry (ex vivo and in vivo) were used for the characterization of the prototypes. Experimental results demonstrated an augmentation of the steering range by 80% along one preferentially chosen axis, compared to a classic spherical array of the same total number of elements. The electric power density provided to the piezoceramic transducers exceeded 50 W cm-2 CW, without circulation of coolant water. Another important advantage of the current approach is the versatility of reshaping the array at low cost.

An MR-compliant phased-array HIFU transducer with augmented steering range, dedicated to abdominal thermotherapy.

PubMed

Auboiroux, Vincent; Dumont, Erik; Petrusca, Lorena; Viallon, Magalie; Salomir, Rares

2011-06-21

A novel architecture for a phased-array high intensity focused ultrasound (HIFU) device was investigated, aiming to increase the capabilities of electronic steering without reducing the size of the elementary emitters. The principal medical application expected to benefit from these developments is the time-effective sonication of large tumours in moving organs. The underlying principle consists of dividing the full array of transducers into multiple sub-arrays of different resonance frequencies, with the reorientation of these individual emitters, such that each sub-array can focus within a given spatial zone. To enable magnetic resonance (MR) compatibility of the device and the number of output channels from the RF generator to be halved, a passive spectral multiplexing technique was used, consisting of parallel wiring of frequency-shifted paired piezoceramic emitters with intrinsic narrow-band response. Two families of 64 emitters (circular, 5 mm diameter) were mounted, with optimum efficiency at 0.96 and 1.03 MHz, respectively. Two different prototypes of the HIFU device were built and tested, each incorporating the same two families of emitters, but differing in the shape of the rapid prototyping plastic support that accommodated the transducers (spherical cap with radius of curvature/aperture of 130 mm/150 mm and, respectively, 80 mm/110 mm). Acoustic measurements, MR-acoustic radiation force imaging (ex vivo) and MR-thermometry (ex vivo and in vivo) were used for the characterization of the prototypes. Experimental results demonstrated an augmentation of the steering range by 80% along one preferentially chosen axis, compared to a classic spherical array of the same total number of elements. The electric power density provided to the piezoceramic transducers exceeded 50 W cm(-2) CW, without circulation of coolant water. Another important advantage of the current approach is the versatility of reshaping the array at low cost.

Doping-free white organic light-emitting diodes without blue molecular emitter: An unexplored approach to achieve high performance via exciplex emission

NASA Astrophysics Data System (ADS)

Luo, Dongxiang; Xiao, Ye; Hao, Mingming; Zhao, Yu; Yang, Yibin; Gao, Yuan; Liu, Baiquan

2017-02-01

Doping-free white organic light-emitting diodes (DF-WOLEDs) are promising for the low-cost commercialization because of their simplified device structures. However, DF-WOLEDs reported thus far in the literature are based on the use of blue single molecular emitters, whose processing can represent a crucial point in device manufacture. Herein, DF-WOLEDs without the blue single molecular emitter have been demonstrated by managing a blue exciplex system. For the single-molecular-emitter (orange or yellow emitter) DF-WOLEDs, (i) a color rendering index (CRI) of 81 at 1000 cd/m2 can be obtained, which is one of the highest for the single-molecular-emitter WOLEDs, or (ii) a high efficiency of 35.4 lm/W can be yielded. For the dual-molecular-emitter (yellow/red emitters) DF-WOLED, a high CRI of 85 and low correlated color temperature of 2376 K at 1000 cd/m2 have been simultaneously achieved, which has not been reported by previous DF-WOLEDs. Such presented findings may unlock an alternative avenue to the simplified but high-performance WOLEDs.

Single photon emission from plasma treated 2D hexagonal boron nitride.

PubMed

Xu, Zai-Quan; Elbadawi, Christopher; Tran, Toan Trong; Kianinia, Mehran; Li, Xiuling; Liu, Daobin; Hoffman, Timothy B; Nguyen, Minh; Kim, Sejeong; Edgar, James H; Wu, Xiaojun; Song, Li; Ali, Sajid; Ford, Mike; Toth, Milos; Aharonovich, Igor

2018-05-03

Artificial atomic systems in solids are becoming increasingly important building blocks in quantum information processing and scalable quantum nanophotonic networks. Amongst numerous candidates, 2D hexagonal boron nitride has recently emerged as a promising platform hosting single photon emitters. Here, we report a number of robust plasma and thermal annealing methods for fabrication of emitters in tape-exfoliated hexagonal boron nitride (hBN) crystals. A two-step process comprising Ar plasma etching and subsequent annealing in Ar is highly robust, and yields an eight-fold increase in the concentration of emitters in hBN. The initial plasma-etching step generates emitters that suffer from blinking and bleaching, whereas the two-step process yields emitters that are photostable at room temperature with emission wavelengths greater than ∼700 nm. Density functional theory modeling suggests that the emitters might be associated with defect complexes that contain oxygen. This is further confirmed by generating the emitters via annealing hBN in air. Our findings advance the present understanding of the structure of quantum emitters in hBN and enhance the nanofabrication toolkit needed to realize integrated quantum nanophotonic circuits.

High-speed and on-chip graphene blackbody emitters for optical communications by remote heat transfer.

PubMed

Miyoshi, Yusuke; Fukazawa, Yusuke; Amasaka, Yuya; Reckmann, Robin; Yokoi, Tomoya; Ishida, Kazuki; Kawahara, Kenji; Ago, Hiroki; Maki, Hideyuki

2018-03-29

High-speed light emitters integrated on silicon chips can enable novel architectures for silicon-based optoelectronics, such as on-chip optical interconnects, and silicon photonics. However, conventional light sources based on compound semiconductors face major challenges for their integration with a silicon-based platform because of their difficulty of direct growth on a silicon substrate. Here we report ultra-high-speed (100-ps response time), highly integrated graphene-based on-silicon-chip blackbody emitters in the near-infrared region including telecommunication wavelength. Their emission responses are strongly affected by the graphene contact with the substrate depending on the number of graphene layers. The ultra-high-speed emission can be understood by remote quantum thermal transport via surface polar phonons of the substrates. We demonstrated real-time optical communications, integrated two-dimensional array emitters, capped emitters operable in air, and the direct coupling of optical fibers to the emitters. These emitters can open new routes to on-Si-chip, small footprint, and high-speed emitters for highly integrated optoelectronics and silicon photonics.

Chemically doped three-dimensional porous graphene monoliths for high-performance flexible field emitters.

PubMed

Kim, Ho Young; Jeong, Sooyeon; Jeong, Seung Yol; Baeg, Kang-Jun; Han, Joong Tark; Jeong, Mun Seok; Lee, Geon-Woong; Jeong, Hee Jin

2015-03-12

Despite the recent progress in the fabrication of field emitters based on graphene nanosheets, their morphological and electrical properties, which affect their degree of field enhancement as well as the electron tunnelling barrier height, should be controlled to allow for better field-emission properties. Here we report a method that allows the synthesis of graphene-based emitters with a high field-enhancement factor and a low work function. The method involves forming monolithic three-dimensional (3D) graphene structures by freeze-drying of a highly concentrated graphene paste and subsequent work-function engineering by chemical doping. Graphene structures with vertically aligned edges were successfully fabricated by the freeze-drying process. Furthermore, their number density could be controlled by varying the composition of the graphene paste. Al- and Au-doped 3D graphene emitters were fabricated by introducing the corresponding dopant solutions into the graphene sheets. The resulting field-emission characteristics of the resulting emitters are discussed. The synthesized 3D graphene emitters were highly flexible, maintaining their field-emission properties even when bent at large angles. This is attributed to the high crystallinity and emitter density and good chemical stability of the 3D graphene emitters, as well as to the strong interactions between the 3D graphene emitters and the substrate.

Saturation of the Electric Field Transmitted to the Magnetosphere

NASA Technical Reports Server (NTRS)

Lyatsky, Wladislaw; Khazanov, George V.; Slavin, James A.

2010-01-01

We reexamined the processes leading to saturation of the electric field, transmitted into the Earth's ionosphere from the solar wind, incorporating features of the coupled system previously ignored. We took into account that the electric field is transmitted into the ionosphere through a region of open field lines, and that the ionospheric conductivity in the polar cap and auroral zone may be different. Penetration of the electric field into the magnetosphere is linked with the generation of the Alfven wave, going out from the ionosphere into the solar wind and being coupled with the field-aligned currents at the boundary of the open field limes. The electric field of the outgoing Alfven wave reduces the original electric field and provides the saturation effect in the electric field and currents during strong geomagnetic disturbances, associated with increasing ionospheric conductivity. The electric field and field-aligned currents of this Alfven wave are dependent on the ionospheric and solar wind parameters and may significantly affect the electric field and field-aligned currents, generated in the polar ionosphere. Estimating the magnitude of the saturation effect in the electric field and field-aligned currents allows us to improve the correlation between solar wind parameters and resulting disturbances in the Earth's magnetosphere.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pierret, C.; Maunoury, L.; Biri, S.

The goal of this article is to present simulations on the extraction from an electron cyclotron resonance ion source (ECRIS). The aim of this work is to find out an extraction system, which allows one to reduce the emittances and to increase the current of the extracted ion beam at the focal point of the analyzing dipole. But first, we should locate the correct software which is able to reproduce the specific physics of an ion beam. To perform the simulations, the following softwares have been tested: SIMION 3D, AXCEL, CPO 3D, and especially, for the magnetic field calculation, MATHEMATICAmore » coupled with the RADIA module. Emittance calculations have been done with two types of ECRIS: one with a hexapole and one without a hexapole, and the difference will be discussed.« less

High-Precision Half-Life Measurement for the Superallowed β+ Emitter Alm26

NASA Astrophysics Data System (ADS)

Finlay, P.; Ettenauer, S.; Ball, G. C.; Leslie, J. R.; Svensson, C. E.; Andreoiu, C.; Austin, R. A. E.; Bandyopadhyay, D.; Cross, D. S.; Demand, G.; Djongolov, M.; Garrett, P. E.; Green, K. L.; Grinyer, G. F.; Hackman, G.; Leach, K. G.; Pearson, C. J.; Phillips, A. A.; Sumithrarachchi, C. S.; Triambak, S.; Williams, S. J.

2011-01-01

A high-precision half-life measurement for the superallowed β+ emitter Alm26 was performed at the TRIUMF-ISAC radioactive ion beam facility yielding T1/2=6346.54±0.46stat±0.60systms, consistent with, but 2.5 times more precise than, the previous world average. The Alm26 half-life and ft value, 3037.53(61) s, are now the most precisely determined for any superallowed β decay. Combined with recent theoretical corrections for isospin-symmetry-breaking and radiative effects, the corrected Ft value for Alm26, 3073.0(12) s, sets a new benchmark for the high-precision superallowed Fermi β-decay studies used to test the conserved vector current hypothesis and determine the Vud element of the Cabibbo-Kobayashi-Maskawa quark mixing matrix.

Development of ion implanted gallium arsenide transistors

NASA Technical Reports Server (NTRS)

Hunsperger, R.; Baron, R.

1972-01-01

Techniques were developed for creating bipolar microwave transistors in GaAs by ion implantation doping. The electrical properties of doped layers produced by the implantation of the light ions Be, Mg, and S were studied. Be, Mg, and S are suitable for forming the relatively deep base-collector junction at low ion energies. The electrical characteristics of ion-implanted diodes of both the mesa and planar types were determined. Some n-p-n planar transistor structures were fabricated by implantation of Mg to form the base regions and Si to form the emitters. These devices were found to have reasonably good base-collector and emitter-base junctions, but the current gain beta was small. The low was attributable to radiative recombination in the base region, which was extremely wide.

Liquid metal ion source and alloy for ion emission of multiple ionic species

DOEpatents

Clark, Jr., William M.; Utlaut, Mark W.; Wysocki, Joseph A.; Storms, Edmund K.; Szklarz, Eugene G.; Behrens, Robert G.; Swanson, Lynwood W.; Bell, Anthony E.

1987-06-02

A liquid metal ion source and alloy for the simultaneous ion evaporation of arsenic and boron, arsenic and phosphorus, or arsenic, boron and phosphorus. The ionic species to be evaporated are contained in palladium-arsenic-boron and palladium-arsenic-boron-phosphorus alloys. The ion source, including an emitter means such as a needle emitter and a source means such as U-shaped heater element, is preferably constructed of rhenium and tungsten, both of which are readily fabricated. The ion sources emit continuous beams of ions having sufficiently high currents of the desired species to be useful in ion implantation of semiconductor wafers for preparing integrated circuit devices. The sources are stable in operation, experience little corrosion during operation, and have long operating lifetimes.

Diamond field emitter array cathodes and possibilities for employing additive manufacturing for dielectric laser accelerating structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Simakov, Evgenya Ivanovna; Andrews, Heather Lynn; Herman, Matthew Joseph

2016-09-20

These are slides for a presentation at Stanford University. The outline is as follows: Motivation: customers for compact accelerators, LANL's technologies for laser acceleration, DFEA cathodes, and additive manufacturing of micron-size structures. Among the stated conclusions are the following: preliminary study identified DFEA cathodes as promising sources for DLAs--high beam current and small emittance; additive manufacturing with Nanoscribe Professional GT can produce structures with the right scale features for a DLA operating at micron wavelengths (fabrication tolerances need to be studied, DLAs require new materials). Future plans include DLA experiment with a beam produced by the DFEA cathode with fieldmore » emission, demonstration of photoemission from DFEAs, and new structures to print and test.« less

Design, Fabrication, and Characterization of Carbon Nanotube Field Emission Devices for Advanced Applications

NASA Astrophysics Data System (ADS)

Radauscher, Erich Justin

Carbon nanotubes (CNTs) have recently emerged as promising candidates for electron field emission (FE) cathodes in integrated FE devices. These nanostructured carbon materials possess exceptional properties and their synthesis can be thoroughly controlled. Their integration into advanced electronic devices, including not only FE cathodes, but sensors, energy storage devices, and circuit components, has seen rapid growth in recent years. The results of the studies presented here demonstrate that the CNT field emitter is an excellent candidate for next generation vacuum microelectronics and related electron emission devices in several advanced applications. The work presented in this study addresses determining factors that currently confine the performance and application of CNT-FE devices. Characterization studies and improvements to the FE properties of CNTs, along with Micro-Electro-Mechanical Systems (MEMS) design and fabrication, were utilized in achieving these goals. Important performance limiting parameters, including emitter lifetime and failure from poor substrate adhesion, are examined. The compatibility and integration of CNT emitters with the governing MEMS substrate (i.e., polycrystalline silicon), and its impact on these performance limiting parameters, are reported. CNT growth mechanisms and kinetics were investigated and compared to silicon (100) to improve the design of CNT emitter integrated MEMS based electronic devices, specifically in vacuum microelectronic device (VMD) applications. Improved growth allowed for design and development of novel cold-cathode FE devices utilizing CNT field emitters. A chemical ionization (CI) source based on a CNT-FE electron source was developed and evaluated in a commercial desktop mass spectrometer for explosives trace detection. This work demonstrated the first reported use of a CNT-based ion source capable of collecting CI mass spectra. The CNT-FE source demonstrated low power requirements, pulsing capabilities, and average lifetimes of over 320 hours when operated in constant emission mode under elevated pressures, without sacrificing performance. Additionally, a novel packaged ion source for miniature mass spectrometer applications using CNT emitters, a MEMS based Nier-type geometry, and a Low Temperature Cofired Ceramic (LTCC) 3D scaffold with integrated ion optics were developed and characterized. While previous research has shown other devices capable of collecting ion currents on chip, this LTCC packaged MEMS micro-ion source demonstrated improvements in energy and angular dispersion as well as the ability to direct the ions out of the packaged source and towards a mass analyzer. Simulations and experimental design, fabrication, and characterization were used to make these improvements. Finally, novel CNT-FE devices were developed to investigate their potential to perform as active circuit elements in VMD circuits. Difficulty integrating devices at micron-scales has hindered the use of vacuum electronic devices in integrated circuits, despite the unique advantages they offer in select applications. Using a combination of particle trajectory simulation and experimental characterization, device performance in an integrated platform was investigated. Solutions to the difficulties in operating multiple devices in close proximity and enhancing electron transmission (i.e., reducing grid loss) are explored in detail. A systematic and iterative process was used to develop isolation structures that reduced crosstalk between neighboring devices from 15% on average, to nearly zero. Innovative geometries and a new operational mode reduced grid loss by nearly threefold, thereby improving transmission of the emitted cathode current to the anode from 25% in initial designs to 70% on average. These performance enhancements are important enablers for larger scale integration and for the realization of complex vacuum microelectronic circuits.

Superresolution microscope image reconstruction by spatiotemporal object decomposition and association: application in resolving t-tubule structure in skeletal muscle

PubMed Central

Sun, Mingzhai; Huang, Jiaqing; Bunyak, Filiz; Gumpper, Kristyn; De, Gejing; Sermersheim, Matthew; Liu, George; Lin, Pei-Hui; Palaniappan, Kannappan; Ma, Jianjie

2014-01-01

One key factor that limits resolution of single-molecule superresolution microscopy relates to the localization accuracy of the activated emitters, which is usually deteriorated by two factors. One originates from the background noise due to out-of-focus signals, sample auto-fluorescence, and camera acquisition noise; and the other is due to the low photon count of emitters at a single frame. With fast acquisition rate, the activated emitters can last multiple frames before they transiently switch off or permanently bleach. Effectively incorporating the temporal information of these emitters is critical to improve the spatial resolution. However, majority of the existing reconstruction algorithms locate the emitters frame by frame, discarding or underusing the temporal information. Here we present a new image reconstruction algorithm based on tracklets, short trajectories of the same objects. We improve the localization accuracy by associating the same emitters from multiple frames to form tracklets and by aggregating signals to enhance the signal to noise ratio. We also introduce a weighted mean-shift algorithm (WMS) to automatically detect the number of modes (emitters) in overlapping regions of tracklets so that not only well-separated single emitters but also individual emitters within multi-emitter groups can be identified and tracked. In combination with a maximum likelihood estimator method (MLE), we are able to resolve low to medium density of overlapping emitters with improved localization accuracy. We evaluate the performance of our method with both synthetic and experimental data, and show that the tracklet-based reconstruction is superior in localization accuracy, particularly for weak signals embedded in a strong background. Using this method, for the first time, we resolve the transverse tubule structure of the mammalian skeletal muscle. PMID:24921337

Superresolution microscope image reconstruction by spatiotemporal object decomposition and association: application in resolving t-tubule structure in skeletal muscle.

PubMed

Sun, Mingzhai; Huang, Jiaqing; Bunyak, Filiz; Gumpper, Kristyn; De, Gejing; Sermersheim, Matthew; Liu, George; Lin, Pei-Hui; Palaniappan, Kannappan; Ma, Jianjie

2014-05-19

One key factor that limits resolution of single-molecule superresolution microscopy relates to the localization accuracy of the activated emitters, which is usually deteriorated by two factors. One originates from the background noise due to out-of-focus signals, sample auto-fluorescence, and camera acquisition noise; and the other is due to the low photon count of emitters at a single frame. With fast acquisition rate, the activated emitters can last multiple frames before they transiently switch off or permanently bleach. Effectively incorporating the temporal information of these emitters is critical to improve the spatial resolution. However, majority of the existing reconstruction algorithms locate the emitters frame by frame, discarding or underusing the temporal information. Here we present a new image reconstruction algorithm based on tracklets, short trajectories of the same objects. We improve the localization accuracy by associating the same emitters from multiple frames to form tracklets and by aggregating signals to enhance the signal to noise ratio. We also introduce a weighted mean-shift algorithm (WMS) to automatically detect the number of modes (emitters) in overlapping regions of tracklets so that not only well-separated single emitters but also individual emitters within multi-emitter groups can be identified and tracked. In combination with a maximum likelihood estimator method (MLE), we are able to resolve low to medium density of overlapping emitters with improved localization accuracy. We evaluate the performance of our method with both synthetic and experimental data, and show that the tracklet-based reconstruction is superior in localization accuracy, particularly for weak signals embedded in a strong background. Using this method, for the first time, we resolve the transverse tubule structure of the mammalian skeletal muscle.

Long-lived and highly efficient green and blue phosphorescent emitters and device architectures for OLED displays

NASA Astrophysics Data System (ADS)

Eickhoff, Christian; Murer, Peter; Geßner, Thomas; Birnstock, Jan; Kröger, Michael; Choi, Zungsun; Watanabe, Soichi; May, Falk; Lennartz, Christian; Stengel, Ilona; Münster, Ingo; Kahle, Klaus; Wagenblast, Gerhard; Mangold, Hannah

2015-09-01

In this paper, two OLED device concepts are introduced. First, classical phosphorescent green carbene emitters with unsurpassed lifetime, combined with low voltage and high efficiency are presented and the associated optimized OLED stacks are explained. Second, a path towards highly efficient, long-lived deep blue systems is shown. The high efficiencies can be reached by having the charge-recombination on the phosphorescent carbene emitter while at the same time short emissive lifetimes are realized by fast energy transfer to the fluorescent emitter, which eventually allows for higher OLED stability in the deep blue. Device architectures, materials and performance data are presented showing that carbene type emitters have the potential to outperform established phosphorescent green emitters both in terms of lifetime and efficiency. The specific class of green emitters under investigation shows distinctly larger electron affinities (2.1 to 2.5 eV) and ionization potentials (5.6 to 5.8 eV) as compared to the "standard" emitter Ir(ppy)3 (5.0/1.6 eV). This difference in energy levels requires an adopted OLED design, in particular with respect to emitter hosts and blocking layers. Consequently, in the diode setup presented here, the emitter species is electron transporting or electron trapping. For said green carbene emitters, the typical peak wavelength is 525 nm yielding CIE color coordinates of (x = 0.33, y = 0.62). Device data of green OLEDs are shown with EQEs of 26 %. Driving voltage at 1000 cd/m2 is below 3 V. In an optimized stack, a device lifetime of LT95 > 15,000 h (1000 cd/m2) has been reached, thus fulfilling AMOLED display requirements.

Oxygen targeting in preterm infants using the Masimo SET Radical pulse oximeter

PubMed Central

Johnston, Ewen D; Boyle, Breidge; Juszczak, Ed; King, Andy; Brocklehurst, Peter; Stenson, Ben J

2011-01-01

Background A pretrial clinical improvement project for the BOOST-II UK trial of oxygen saturation targeting revealed an artefact affecting saturation profiles obtained from the Masimo Set Radical pulse oximeter. Methods Saturation was recorded every 10 s for up to 2 weeks in 176 oxygen dependent preterm infants in 35 UK and Irish neonatal units between August 2006 and April 2009 using Masimo SET Radical pulse oximeters. Frequency distributions of % time at each saturation were plotted. An artefact affecting the saturation distribution was found to be attributable to the oximeter's internal calibration algorithm. Revised software was installed and saturation distributions obtained were compared with four other current oximeters in paired studies. Results There was a reduction in saturation values of 87–90%. Values above 87% were elevated by up to 2%, giving a relative excess of higher values. The software revision eliminated this, improving the distribution of saturation values. In paired comparisons with four current commercially available oximeters, Masimo oximeters with the revised software returned similar saturation distributions. Conclusions A characteristic of the software algorithm reduces the frequency of saturations of 87–90% and increases the frequency of higher values returned by the Masimo SET Radical pulse oximeter. This effect, which remains within the recommended standards for accuracy, is removed by installing revised software (board firmware V4.8 or higher). Because this observation is likely to influence oxygen targeting, it should be considered in the analysis of the oxygen trial results to maximise their generalisability. PMID:21378398

Oxygen targeting in preterm infants using the Masimo SET Radical pulse oximeter.

PubMed

Johnston, Ewen D; Boyle, Breidge; Juszczak, Ed; King, Andy; Brocklehurst, Peter; Stenson, Ben J

2011-11-01

A pretrial clinical improvement project for the BOOST-II UK trial of oxygen saturation targeting revealed an artefact affecting saturation profiles obtained from the Masimo Set Radical pulse oximeter. Saturation was recorded every 10 s for up to 2 weeks in 176 oxygen dependent preterm infants in 35 UK and Irish neonatal units between August 2006 and April 2009 using Masimo SET Radical pulse oximeters. Frequency distributions of % time at each saturation were plotted. An artefact affecting the saturation distribution was found to be attributable to the oximeter's internal calibration algorithm. Revised software was installed and saturation distributions obtained were compared with four other current oximeters in paired studies. There was a reduction in saturation values of 87-90%. Values above 87% were elevated by up to 2%, giving a relative excess of higher values. The software revision eliminated this, improving the distribution of saturation values. In paired comparisons with four current commercially available oximeters, Masimo oximeters with the revised software returned similar saturation distributions. A characteristic of the software algorithm reduces the frequency of saturations of 87-90% and increases the frequency of higher values returned by the Masimo SET Radical pulse oximeter. This effect, which remains within the recommended standards for accuracy, is removed by installing revised software (board firmware V4.8 or higher). Because this observation is likely to influence oxygen targeting, it should be considered in the analysis of the oxygen trial results to maximise their generalisability.

Estimation of plasma ion saturation current and reduced tip arcing using Langmuir probe harmonics.

PubMed

Boedo, J A; Rudakov, D L

2017-03-01

We present a method to calculate the ion saturation current, I sat , for Langmuir probes at high frequency (>100 kHz) using the harmonics technique and we compare that to a direct measurement of I sat . It is noted that the I sat estimation can be made directly by the ratio of harmonic amplitudes, without explicitly calculating T e . We also demonstrate that since the probe tips using the harmonic method are oscillating near the floating potential, drawing little power, this method reduces tip heating and arcing and allows plasma density measurements at a plasma power flux that would cause continuously biased tips to arc. A multi-probe array is used, with two spatially separated tips employing the harmonics technique and measuring the amplitude of at least two harmonics per tip. A third tip, located between the other two, measures the ion saturation current directly. We compare the measured and calculated ion saturation currents for a variety of plasma conditions and demonstrate the validity of the technique and its use in reducing arcs.

Estimation of plasma ion saturation current and reduced tip arcing using Langmuir probe harmonics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boedo, J. A.; Rudakov, D. L.

Here we present a method to calculate the ion saturation current, I sat, for Langmuir probes at high frequency (>100 kHz) using the harmonics technique and we compare that to a direct measurement of I sat. It is noted that the Isat estimation can be made directly by the ratio of harmonic amplitudes, without explicitly calculating T e. We also demonstrate that since the probe tips using the harmonic method are oscillating near the floating potential, drawing little power, this method reduces tip heating and arcing and allows plasma density measurements at a plasma power flux that would cause continuouslymore » biased tips to arc. A multi-probe array is used, with two spatially separated tips employing the harmonics technique and measuring the amplitude of at least two harmonics per tip. A third tip, located between the other two, measures the ion saturation current directly. We compare the measured and calculated ion saturation currents for a variety of plasma conditions and demonstrate the validity of the technique and it’s use in reducing arcs.« less

Estimation of plasma ion saturation current and reduced tip arcing using Langmuir probe harmonics

DOE PAGES

Boedo, J. A.; Rudakov, D. L.

2017-03-20

Here we present a method to calculate the ion saturation current, I sat, for Langmuir probes at high frequency (>100 kHz) using the harmonics technique and we compare that to a direct measurement of I sat. It is noted that the Isat estimation can be made directly by the ratio of harmonic amplitudes, without explicitly calculating T e. We also demonstrate that since the probe tips using the harmonic method are oscillating near the floating potential, drawing little power, this method reduces tip heating and arcing and allows plasma density measurements at a plasma power flux that would cause continuouslymore » biased tips to arc. A multi-probe array is used, with two spatially separated tips employing the harmonics technique and measuring the amplitude of at least two harmonics per tip. A third tip, located between the other two, measures the ion saturation current directly. We compare the measured and calculated ion saturation currents for a variety of plasma conditions and demonstrate the validity of the technique and it’s use in reducing arcs.« less

Towards graphane field emitters

PubMed Central

Ding, Shuyi; Li, Chi; Zhou, Yanhuai; Collins, Clare M.; Kang, Moon H.; Parmee, Richard J.; Zhang, Xiaobing; Milne, William I.; Wang, Baoping

2015-01-01

We report on the improved field emission performance of graphene foam (GF) following transient exposure to hydrogen plasma. The enhanced field emission mechanism associated with hydrogenation has been investigated using Fourier transform infrared spectroscopy, plasma spectrophotometry, Raman spectroscopy, and scanning electron microscopy. The observed enhanced electron emissionhas been attributed to an increase in the areal density of lattice defects and the formation of a partially hydrogenated, graphane-like material. The treated GF emitter demonstrated a much reduced macroscopic turn-on field (2.5 V μm–1), with an increased maximum current density from 0.21 mA cm–2 (pristine) to 8.27 mA cm–2 (treated). The treated GFs vertically orientated protrusions, after plasma etching, effectively increased the local electric field resulting in a 2.2-fold reduction in the turn-on electric field. The observed enhancement is further attributed to hydrogenation and the subsequent formation of a partially hydrogenated structured 2D material, which advantageously shifts the emitter work function. Alongside augmentation of the nominal crystallite size of the graphitic superstructure, surface bound species are believed to play a key role in the enhanced emission. The hydrogen plasma treatment was also noted to increase the emission spatial uniformity, with an approximate four times reduction in the per unit area variation in emission current density. Our findings suggest that plasma treatments, and particularly hydrogen and hydrogen-containing precursors, may provide an efficient, simple, and low cost means of realizing enhanced nanocarbon-based field emission devices via the engineered degradation of the nascent lattice, and adjustment of the surface work function. PMID:28066543

Light-operated proximity detector with linear output

DOEpatents

Simpson, M.L.; McNeilly, D.R.

1984-01-01

A light-operated proximity detector is described in which reflected light intensity from a surface whose proximity to the detector is to be gauged is translated directly into a signal proportional to the distance of the detector from the surface. A phototransistor is used to sense the reflected light and is connected in a detector circuit which maintains the phtotransistor in a saturated state. A negative feedback arrangement using an operational amplifier connected between the collector and emitter of the transistor provides an output at the output of the amplifier which is linearly proportional to the proximity of the surface to the detector containing the transistor. This direct proportional conversion is true even though the light intensity is varying with the proximity in proportion to the square of the inverse of the distance. The detector may be used for measuring the distance remotely from any target surface.

Light-operated proximity detector with linear output

DOEpatents

Simpson, Marc L.; McNeilly, David R.

1985-01-01

A light-operated proximity detector is described in which reflected light intensity from a surface whose proximity to the detector is to be gauged is translated directly into a signal proportional to the distance of the detector from the surface. A phototransistor is used to sense the reflected light and is connected in a detector circuit which maintains the phototransistor in a saturated state. A negative feedback arrangement using an operational amplifier connected between the collector and emitter of the transistor provides an output at the output of the amplifier which is linearly proportional to the proximity of the surface to the detector containing the transistor. This direct proportional conversion is true even though the light intensity is varying with the proximity in proportion to the square of the inverse of the distance. The detector may be used for measuring the distance remotely from any target surface.

Incipient ferroelectricity of water molecules confined to nano-channels of beryl

NASA Astrophysics Data System (ADS)

Gorshunov, B. P.; Torgashev, V. I.; Zhukova, E. S.; Thomas, V. G.; Belyanchikov, M. A.; Kadlec, C.; Kadlec, F.; Savinov, M.; Ostapchuk, T.; Petzelt, J.; Prokleška, J.; Tomas, P. V.; Pestrjakov, E. V.; Fursenko, D. A.; Shakurov, G. S.; Prokhorov, A. S.; Gorelik, V. S.; Kadyrov, L. S.; Uskov, V. V.; Kremer, R. K.; Dressel, M.

2016-09-01

Water is characterized by large molecular electric dipole moments and strong interactions between molecules; however, hydrogen bonds screen the dipole-dipole coupling and suppress the ferroelectric order. The situation changes drastically when water is confined: in this case ordering of the molecular dipoles has been predicted, but never unambiguously detected experimentally. In the present study we place separate H2O molecules in the structural channels of a beryl single crystal so that they are located far enough to prevent hydrogen bonding, but close enough to keep the dipole-dipole interaction, resulting in incipient ferroelectricity in the water molecular subsystem. We observe a ferroelectric soft mode that causes Curie-Weiss behaviour of the static permittivity, which saturates below 10 K due to quantum fluctuations. The ferroelectricity of water molecules may play a key role in the functioning of biological systems and find applications in fuel and memory cells, light emitters and other nanoscale electronic devices.

A 16.9 dBm InP DHBT W-band power amplifier with more than 20 dB gain

NASA Astrophysics Data System (ADS)

Hongfei, Yao; Yuxiong, Cao; Danyu, Wu; Xiaoxi, Ning; Yongbo, Su; Zhi, Jin

2013-07-01

A two-stage MMIC power amplifier has been realized by use of a 1-μm InP double heterojunction bipolar transistor (DHBT). The cascode structure, low-loss matching networks, and low-parasite cell units enhance the power gain. The optimum load impedance is determined from load-pull simulation. A coplanar waveguide transmission line is adopted for its ease of fabrication. The chip size is 1.5 × 1.7 mm2 with the emitter area of 16 × 1 μm × 15 μm in the output stage. Measurements show that small signal gain is more than 20 dB over 75.5-84.5 GHz and the saturated power is 16.9 dBm @ 79 GHz with gain of 15.2 dB. The high power gain makes it very suitable for medium power amplification.

Streaming Potential In Rocks Saturated With Water And Oil

NASA Astrophysics Data System (ADS)

Tarvin, J. A.; Caston, A.

2011-12-01

Fluids flowing through porous media generate electrical currents. These currents cause electric potentials, called "streaming potentials." Streaming potential amplitude depends on the applied pressure gradient, on rock and fluid properties, and on the interaction between rock and fluid. Streaming potential has been measured for rocks saturated with water (1) and with water-gas mixtures. (2) Few measurements (3) have been reported for rocks saturated with water-oil mixtures. We measured streaming potential for sandstone and limestone saturated with a mixture of brine and laboratory oil. Cylindrical samples were initially saturated with brine and submerged in oil. Saturation was changed by pumping oil from one end of a sample to the other and then through the sample in the opposite direction. Saturation was estimated from sample resistivity. The final saturation of each sample was determined by heating the sample in a closed container and measuring the pressure. Measurements were made by modulating the pressure difference (of oil) between the ends of a sample at multiple frequencies below 20 Hz. The observed streaming potential is a weak function of the saturation. Since sample conductivity decreases with increasing oil saturation, the electro-kinetic coupling coefficient (Pride's L (4)) decreases with increasing oil saturation. (1) David B. Pengra and Po-zen Wong, Colloids and Surfaces, vol., p. 159 283-292 (1999). (2) Eve S. Sprunt, Tony B. Mercer, and Nizar F. Djabbarah, Geophysics, vol. 59, p. 707-711 (1994). (3) Vinogradov, J., Jackson, M.D., Geophysical Res. L., Vol. 38, Article L01301 (2011). (4) Steve Pride, Phys. Rev. B, vol. 50, pp. 15678-15696 (1994).

Prediction and design of efficient exciplex emitters for high-efficiency, thermally activated delayed-fluorescence organic light-emitting diodes.

PubMed

Liu, Xiao-Ke; Chen, Zhan; Zheng, Cai-Jun; Liu, Chuan-Lin; Lee, Chun-Sing; Li, Fan; Ou, Xue-Mei; Zhang, Xiao-Hong

2015-04-08

High-efficiency, thermally activated delayed-fluorescence organic light-emitting diodes based on exciplex emitters are demonstrated. The best device, based on a TAPC:DPTPCz emitter, shows a high external quantum efficiency of 15.4%. Strategies for predicting and designing efficient exciplex emitters are also provided. This approach allow prediction and design of efficient exciplex emitters for achieving high-efficiency organic light-emitting diodes, for future use in displays and lighting applications. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Minimum emittance in TBA and MBA lattices

NASA Astrophysics Data System (ADS)

Xu, Gang; Peng, Yue-Mei

2015-03-01

For reaching a small emittance in a modern light source, triple bend achromats (TBA), theoretical minimum emittance (TME) and even multiple bend achromats (MBA) have been considered. This paper derived the necessary condition for achieving minimum emittance in TBA and MBA theoretically, where the bending angle of inner dipoles has a factor of 31/3 bigger than that of the outer dipoles. Here, we also calculated the conditions attaining the minimum emittance of TBA related to phase advance in some special cases with a pure mathematics method. These results may give some directions on lattice design.

Simulated Performance of the Wisconsin Superconducting Electron Gun

DOE Office of Scientific and Technical Information (OSTI.GOV)

R.A. Bosch, K.J. Kleman, R.A. Legg

2012-07-01

The Wisconsin superconducting electron gun is modeled with multiparticle tracking simulations using the ASTRA and GPT codes. To specify the construction of the emittance-compensation solenoid, we studied the dependence of the output bunch's emittance upon the solenoid's strength and field errors. We also evaluated the dependence of the output bunch's emittance upon the bunch's initial emittance and the size of the laser spot on the photocathode. The results suggest that a 200-pC bunch with an emittance of about one mm-mrad can be produced for a free-electron laser.

Solar absorptance and thermal emittance of some common spacecraft thermal-control coatings

NASA Technical Reports Server (NTRS)

Henninger, J. H.

1984-01-01

Solar absorptance and thermal emittance of spacecraft materials are critical parameters in determining spacecraft temperature control. Because thickness, surface preparation, coatings formulation, manufacturing techniques, etc. affect these parameters, it is usually necessary to measure the absorptance and emittance of materials before they are used. Absorptance and emittance data for many common types of thermal control coatings, are together with some sample spectral data curves of absorptance. In some cases for which ultraviolet and particle radiation data are available, the degraded absorptance and emittance values are also listed.

Membrane-Based Emitter for Coupling Microfluidics with Ultrasensitive Nanoelectrospray Ionization-Mass Spectrometry

PubMed Central

Sun, Xuefei; Kelly, Ryan T.; Tang, Keqi; Smith, Richard D.

2011-01-01

An integrated poly(dimethylsiloxane) (PDMS) membrane-based microfluidic emitter for high performance nanoelectrospray ionization-mass spectrometry (nanoESI-MS) has been fabricated and evaluated. The ~100-μm-thick emitter was created by cutting a PDMS membrane that protrudes beyond the bulk substrate. The reduced surface area at the emitter enhances the electric field and reduces wetting of the surface by the electrospray solvent. As such, the emitter enables highly stable electrosprays at flow rates as low as 10 nL/min, and is compatible with electrospray solvents containing a large organic component (e.g., 90% methanol). This approach enables facile emitter construction, and provides excellent stability, reproducibility and sensitivity, as well as compatibility with multilayer soft lithography. PMID:21657269

Design and testing a high fuel volume fraction, externally finned, thermionic emitter.

NASA Technical Reports Server (NTRS)

Peelgren, M. L.; Ernst, D. M.

1971-01-01

A prototypical, high fuel volume fraction, thermionic emitter body was designed and tested. The emitter body is all tungsten, with a 1.40-cm ID, a 3.23-cm OD, and eight full-length axial fins. The emitter thickness is 0.15 cm while the fins and outer clad are 0.075 cm thick. Different methods of fabrication were used in making the test samples. Stress analysis was performed with a three-dimensional elastic code. Thermal testing of the samples, duplicating calculated radial temperature gradients, heatup and cooldown rates, and emitter body temperatures in operation, was performed with no structural failures noted (six heatup and cooldown cycles per sample). Further emitter analysis and testing is planned.

Rare-Earth Oxide (Yb2O3) Selective Emitter Fabrication and Evaluation

NASA Technical Reports Server (NTRS)

Jennette, Bryan; Gregory, Don A.; Herren, Kenneth; Tucker, Dennis; Smith, W. Scott (Technical Monitor)

2001-01-01

This investigation involved the fabrication and evaluation of rare-earth oxide selective emitters. The first goal of this study was to successfully fabricate the selective emitter samples using paper and ceramic materials processing techniques. The resulting microstructure was also analyzed using a Scanning Electron Microscope. All selective emitter samples fabricated for this study were made with ytterbium oxide (Yb2O3). The second goal of this study involved the measurement of the spectral emission and the radiated power of all the selective emitter samples. The final goal of this study involved the direct comparison of the radiated power emitted by the selective emitter samples to that of a standard blackbody at the same temperature and within the same wavelength range.

Emittance of positron beams produced in intense laser plasma interaction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen Hui; Hazi, A.; Link, A.

2013-01-15

The first measurement of the emittance of intense laser-produced positron beams has been made. The emittance values were derived through measurements of positron beam divergence and source size for different peak positron energies under various laser conditions. For one of these laser conditions, we used a one dimensional pepper-pot technique to refine the emittance value. The laser-produced positrons have a geometric emittance between 100 and 500 mm{center_dot}mrad, comparable to the positron sources used at existing accelerators. With 10{sup 10}-10{sup 12} positrons per bunch, this low emittance beam, which is quasi-monoenergetic in the energy range of 5-20 MeV, may be usefulmore » as an alternative positron source for future accelerators.« less

Ultra High p-doping Material Research for GaN Based Light Emitters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vladimir Dmitriev

2007-06-30

The main goal of the Project is to investigate doping mechanisms in p-type GaN and AlGaN and controllably fabricate ultra high doped p-GaN materials and epitaxial structures. Highly doped p-type GaN-based materials with low electrical resistivity and abrupt doping profiles are of great importance for efficient light emitters for solid state lighting (SSL) applications. Cost-effective hydride vapor phase epitaxial (HVPE) technology was proposed to investigate and develop p-GaN materials for SSL. High p-type doping is required to improve (i) carrier injection efficiency in light emitting p-n junctions that will result in increasing of light emitting efficiency, (ii) current spreading inmore » light emitting structures that will improve external quantum efficiency, and (iii) parameters of Ohmic contacts to reduce operating voltage and tolerate higher forward currents needed for the high output power operation of light emitters. Highly doped p-type GaN layers and AlGaN/GaN heterostructures with low electrical resistivity will lead to novel device and contact metallization designs for high-power high efficiency GaN-based light emitters. Overall, highly doped p-GaN is a key element to develop light emitting devices for the DOE SSL program. The project was focused on material research for highly doped p-type GaN materials and device structures for applications in high performance light emitters for general illumination P-GaN and p-AlGaN layers and multi-layer structures were grown by HVPE and investigated in terms of surface morphology and structure, doping concentrations and profiles, optical, electrical, and structural properties. Tasks of the project were successfully accomplished. Highly doped GaN materials with p-type conductivity were fabricated. As-grown GaN layers had concentration N{sub a}-N{sub d} as high as 3 x 10{sup 19} cm{sup -3}. Mechanisms of doping were investigated and results of material studies were reported at several International conferences providing better understanding of p-type GaN formation for Solid State Lighting community. Grown p-type GaN layers were used as substrates for blue and green InGaN-based LEDs made by HVPE technology at TDI. These results proved proposed technical approach and facilitate fabrication of highly conductive p-GaN materials by low-cost HVPE technology for solid state lighting applications. TDI has started the commercialization of p-GaN epitaxial materials.« less

Improving low-level plasma protein mass spectrometry-based detection for candidate biomarker discovery and validation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Page, Jason S.; Kelly, Ryan T.; Camp, David G.

2008-09-01

Methods. To improve the detection of low abundance protein candidate biomarker discovery and validation, particularly in complex biological fluids such as blood plasma, increased sensitivity is desired using mass spectrometry (MS)-based instrumentation. A key current limitation on the sensitivity of electrospray ionization (ESI) MS is due to the fact that many sample molecules in solution are never ionized, and the vast majority of the ions that are created are lost during transmission from atmospheric pressure to the low pressure region of the mass analyzer. Two key technologies, multi-nanoelectrospray emitters and the electrodynamic ion funnel have recently been developed and refinedmore » at Pacific Northwest National Laboratory (PNNL) to greatly improve the ionization and transmission efficiency of ESI MS based analyses. Multi-emitter based ESI enables the flow from a single source (typically a liquid chromatography [LC] column) to be divided among an array of emitters (Figure 1). The flow rate delivered to each emitter is thus reduced, allowing the well-documented benefits of nanoelectrospray 1 for both sensitivity and quantitation to be realized for higher flow rate separations. To complement the increased ionization efficiency afforded by multi-ESI, tandem electrodynamic ion funnels have also been developed at PNNL, and shown to greatly improve ion transmission efficiency in the ion source interface.2, 3 These technologies have been integrated into a triple quadrupole mass spectrometer for multiple reaction monitoring (MRM) of probable biomarker candidates in blood plasma and show promise for the identification of new species even at low level concentrations.« less

Emission enhancement, light extraction and carrier dynamics in InGaAs/GaAs nanowire arrays

NASA Astrophysics Data System (ADS)

Kivisaari, Pyry; Chen, Yang; Anttu, Nicklas

2018-03-01

Nanowires (NWs) have the potential for a wide range of new optoelectronic applications. For example, light-emitting diodes that span over the whole visible spectrum are currently being developed from NWs to overcome the well known green gap problem. However, due to their small size, NW devices exhibit special properties that complicate their analysis, characterization, and further development. In this paper, we develop a full optoelectronic simulation tool for NW array light emitters accounting for carrier transport and wave-optical emission enhancement (EE), and we use the model to simulate InGaAs/GaAs NW array light emitters with different geometries and temperatures. Our results show that NW arrays emit light preferentially to certain angles depending on the NW diameter and temperature, encouraging temperature- and angle-resolved measurements of NW array light emission. On the other hand, based on our results both the EE and light extraction efficiency can easily change by at least a factor of two between room temperature and 77 K, complicating the characterization of NW light emitters if conventional methods are used. Finally, simulations accounting for surface recombination emphasize its major effect on the device performance. For example, a surface recombination velocity of 104 cm s-1 reported earlier for bare InGaAs surfaces results in internal quantum efficiencies less than 30% for small-diameter NWs even at the temperature of 30 K. This highlights that core-shell structures or high-quality passivation techniques are eventually needed to achieve efficient NW-based light emitters.

Low energy ion beam dynamics of NANOGAN ECR ion source

NASA Astrophysics Data System (ADS)

Kumar, Sarvesh; Mandal, A.

2016-04-01

A new low energy ion beam facility (LEIBF) has been developed for providing the mass analyzed highly charged intense ion beams of energy ranging from a few tens of keV to a few MeV for atomic, molecular and materials sciences research. The new facility consists of an all permanent magnet 10 GHz electron cyclotron resonance (ECR) ion source (NANOGAN) installed on a high voltage platform (400 kV) which provides large currents of multiply charged ion beams. Higher emittance at low energy of intense ion beam puts a tremendous challenge to the beam optical design of this facility. The beam line consists of mainly the electrostatic quadrupoles, an accelerating section, analyzing cum switching magnet and suitable beam diagnostics including vacuum components. The accelerated ion beam is analyzed for a particular mass to charge (m/q) ratio as well as guided to three different lines along 75°, 90° and 105° using a large acceptance analyzing cum switching magnet. The details of transverse beam optics to all the beam lines with TRANSPORT and GICOSY beam optics codes are being described. Field computation code, OPERA 3D has been utilized to design the magnets and electrostatic quadrupoles. A theoretical estimation of emittance for optimized geometry of ion source is given so as to form the basis of beam optics calculations. The method of quadrupole scan of the beam is used to characterize the emittance of the final beam on the target. The measured beam emittance increases with m/q ratios of various ion beams similar to the trend observed theoretically.

Field-emission from parabolic tips: Current distributions, the net current, and effective emission area

NASA Astrophysics Data System (ADS)

Biswas, Debabrata

2018-04-01

Field emission from nano-structured emitters primarily takes place from the tips. Using recent results on the variation of the enhancement factor around the apex [Biswas et al., Ultramicroscopy 185, 1-4 (2018)], analytical expressions for the surface distribution of net emitted electrons, as well as the total and normal energy distributions are derived in terms of the apex radius Ra and the local electric field at the apex Ea. Formulae for the net emitted current and effective emission area in terms of these quantities are also obtained.

SYNCHROTRON RADIATION, FREE ELECTRON LASER, APPLICATION OF NUCLEAR TECHNOLOGY, ETC. Design of a multi-cusp ion source for proton therapy

NASA Astrophysics Data System (ADS)

Wu, Xiao-Bing; Huang, Tao; Ouyang, Hua-Fu; Zhang, Hua-Shun; Gong, Ke-Yun

2010-12-01

The permanent magnets of the discharge chamber in a multi-cusp proton source are studied and designed. The three electrode extraction system is adopted and simulated. A method to extract different amounts of current while keeping the beam emittance unchanged is proposed.

Determination of lifetimes and recombination currents in p-n junction solar cells, diodes, and transistors

NASA Technical Reports Server (NTRS)

Neugroschel, A.

1981-01-01

New methods are presented and illustrated that enable the accurate determination of the diffusion length of minority carriers in the narrow regions of a solar cell or a diode. Other methods now available are inaccurate for the desired case in which the width of the region is less than the diffusion length. Once the diffusion length is determined by the new methods, this result can be combined with measured dark I-V characteristics and with small-signal admittance characteristics to enable determination of the recombination currents in each quasi-neutral region of the cell - for example, in the emitter, low-doped base, and high-doped base regions of the BSF (back-surface-field) cell. This approach leads to values for the effective surface recombination velocity of the high-low junction forming the back-surface field of BSF cells or the high-low emitter junction of HLE cells. These methods are also applicable for measuring the minority-carrier lifetime in thin epitaxial layers grown on substrates with opposite conductivity type.

Process for producing a high emittance coating and resulting article

NASA Technical Reports Server (NTRS)

Le, Huong G. (Inventor); O'Brien, Dudley L. (Inventor)

1993-01-01

Process for anodizing aluminum or its alloys to obtain a surface particularly having high infrared emittance by anodizing an aluminum or aluminum alloy substrate surface in an aqueous sulfuric acid solution at elevated temperature and by a step-wise current density procedure, followed by sealing the resulting anodized surface. In a preferred embodiment the aluminum or aluminum alloy substrate is first alkaline cleaned and then chemically brightened in an acid bath The resulting cleaned substrate is anodized in a 15% by weight sulfuric acid bath maintained at a temperature of 30.degree. C. Anodizing is carried out by a step-wise current density procedure at 19 amperes per square ft. (ASF) for 20 minutes, 15 ASF for 20 minutes and 10 ASF for 20 minutes. After anodizing the sample is sealed by immersion in water at 200.degree. F. and then air dried. The resulting coating has a high infrared emissivity of about 0.92 and a solar absorptivity of about 0.2, for a 5657 aluminum alloy, and a relatively thick anodic coating of about 1 mil.

Static and dynamic behavior of a Si/Si0.8Ge0.2/Si heterojunction bipolar transistor using Monte Carlo simulation

NASA Astrophysics Data System (ADS)

Galdin, Sylvie; Dollfus, Philippe; Hesto, Patrice

1994-03-01

A theoretical study of a Si/Si1-xGex/Si heterojunction bipolar transistor using Monte Carlo simulations is reported. The geometry and composition of the emitter-base junction are optimized using one-dimensional simulations with a view to improving electron transport in the base. It is proposed to introduce a thin Si-P spacer layer, between the Si-N emitter and the SiGe-P base, which allows launching hot electrons into the base despite the lack of natural conduction-band discontinuity between Si and strain SiGe. The high-frequency behavior of the complete transistor is then studied using 2D modeling. A method of microwave analysis using small signal Monte Carlo simulations that consists of expanding the terminal currents in Fourier series is presented. A cutoff frequency fT of 68 GHz has been extracted. Finally, the occurrence of a parasitic electron barrier at the collector-base junction is responsible for the fT fall-off at high collector current density. This parasitic barrier is lowered through the influence of the collector potential.

Effect of reabsorbed recombination radiation on the saturation current of direct gap p-n junctions

NASA Technical Reports Server (NTRS)

Von Roos, O.; Mavromatis, H.

1984-01-01

The application of the radiative transfer theory for semiconductors to p-n homojunctions subject to low level injection conditions is discussed. By virtue of the interaction of the radiation field with free carriers across the depletion layer, the saturation current density in Shockley's expression for the diode current is reduced at high doping levels. The reduction, due to self-induced photon generation, is noticeable for n-type material owing to the small electron effective mass in direct band-gap III-V compounds. The effect is insignificant in p-type material. At an equilibrium electron concentration of 2 x 10 to the 18th/cu cm in GaAs, a reduction of the saturation current density by 15 percent is predicted. It is concluded that realistic GaAs p-n junctions possess a finite thickness.

Magnetic Field Saturation of the Ion Weibel Instability in Interpenetrating Relativistic Plasmas

NASA Astrophysics Data System (ADS)

Takamoto, Makoto; Matsumoto, Yosuke; Kato, Tsunehiko N.

2018-06-01

The time evolution and saturation of the Weibel instability at the ion Alfvén current are presented by ab initio particle-in-cell (PIC) simulations. We found that the ion Weibel current in three-dimensional (3D) simulations could evolve into the Alfvén current where the magnetic field energy is sustained at 1.5% of the initial beam kinetic energy. The current filaments are no longer isolated at saturation, but rather connected to each other to form a network structure. Electrons are continuously heated during the coalescence of the filaments, which is crucial for obtaining sustained magnetic fields with much stronger levels than with two-dimensional (2D) simulations. The results highlight again the importance of the Weibel instability in generating magnetic fields in laboratory, astrophysical, and cosmological situations.

Current control circuitry

DOEpatents

Taubman, Matthew S [Richland, WA

2005-03-15

Among the embodiments of the present invention is an apparatus that includes a transistor (30), a servo device (40), and a current source (50). The servo device (40) is operable to provide a common base mode of operation of the transistor (30) by maintaining an approximately constant voltage level at the transistor base (32b). The current source (150) is operable to provide a bias current to the transistor (30). A first device (24) provides an input signal to an electrical node (70) positioned between the emitter (32e) of the transistor (30) and the current source (50). A second device (26) receives an output signal from the collector (32c) of the transistor (30).

Using antennas separated in flight direction to avoid effect of emitter clock drift in geolocation

DOEpatents

Ormesher, Richard C.; Bickel, Douglas L

2012-10-23

The location of a land-based radio frequency (RF) emitter is determined from an airborne platform. RF signaling is received from the RF emitter via first and second antennas. In response to the received RF signaling, signal samples for both antennas are produced and processed to determine the location of the RF emitter.

Efficient triplet harvesting of hybrid white organic light-emitting diodes using thermally activated delayed fluorescence green emitter

NASA Astrophysics Data System (ADS)

Lee, Song Eun; Lee, Ho Won; Baek, Hyun Jung; Yun, Tae Jun; Yun, Geum Jae; Kim, Woo Young; Kim, Young Kwan

2016-10-01

Hybrid white organic light-emitting diodes (WOLEDs) were fabricated by applying triplet harvesting (TH) using a green thermally activated delayed fluorescence (TADF) emitter. The triplet exciton of the green TADF emitter can be upconverted to its singlet state. The TH involved energy transfer of triplet exciton from a blue fluorescent emitter to a green TADF and red phosphorescent emitters, where they can decay radiatively. In addition, the triplet exciton of the green TADF emitter was energy transferred to its singlet state for a reverse intersystem crossing by green emission. Enhanced hybrid WOLEDs were demonstrated using an efficient green TADF emitter combined with red phosphorescent and blue fluorescent emitters. Hybrid WOLEDs were fabricated with various hole-electron recombination zones as changing blue emitting layer thicknesses. Among these, hybrid WOLEDs showed a maximum external quantum efficiency of 11.23%, luminous efficiency of 29.20 cd/A, and a power efficiency of 26.21 lm/W. Moreover, the WOLED exhibited electroluminescence spectra with Commission International de L'Éclairage chromaticity of (0.38, 0.36) at 1000 cd/m2 and a color rendering index of 82 at a practical brightness of 20,000 cd/m2.

Dynamical theory of single-photon transport in a one-dimensional waveguide coupled to identical and nonidentical emitters

NASA Astrophysics Data System (ADS)

Liao, Zeyang; Nha, Hyunchul; Zubairy, M. Suhail

2016-11-01

We develop a general dynamical theory for studying a single-photon transport in a one-dimensional (1D) waveguide coupled to multiple emitters which can be either identical or nonidentical. In this theory, both the effects of the waveguide and non-waveguide vacuum modes are included. This theory enables us to investigate the propagation of an emitter excitation or an arbitrary single-photon pulse along an array of emitters coupled to a 1D waveguide. The dipole-dipole interaction induced by the non-waveguide modes, which is usually neglected in the literature, can significantly modify the dynamics of the emitter system as well as the characteristics of the output field if the emitter separation is much smaller than the resonance wavelength. Nonidentical emitters can also strongly couple to each other if their energy difference is less than or of the order of the dipole-dipole energy shift. Interestingly, if their energy difference is close but nonzero, a very narrow transparency window around the resonance frequency can appear which does not occur for identical emitters. This phenomenon may find important applications in quantum waveguide devices such as optical switches and ultranarrow single-photon frequency comb generator.

Cascaded injection resonator for coherent beam combining of laser arrays

DOEpatents

Kireev, Vassili [Sunnyvale, CA; Liu, Yun; Protopopescu, Vladimir [Knoxville, TN; Braiman, Yehuda [Oak Ridge, TN

2008-10-21

The invention provides a cascaded injection resonator for coherent beam combining of laser arrays. The resonator comprises a plurality of laser emitters arranged along at least one plane and a beam sampler for reflecting at least a portion of each laser beam that impinges on the beam sampler, the portion of each laser beam from one of the laser emitters being reflected back to another one of the laser emitters to cause a beam to be generated from the other one of the laser emitters to the beam reflector. The beam sampler also transmits a portion of each laser beam to produce a laser output beam such that a plurality of laser output beams of the same frequency are produced. An injection laser beam is directed to a first laser emitter to begin a process of generating and reflecting a laser beam from one laser emitter to another laser emitter in the plurality. A method of practicing the invention is also disclosed.

Quantifying the water storage volume of major aquifers in the US

NASA Astrophysics Data System (ADS)

Jame, S. A.; Bowling, L. C.

2017-12-01

Groundwater is one of our most valuable natural resources which affects not only the food and energy nexus, but ecosystem and human health, through the availability of drinking water. Quantification of current groundwater storage is not only required to better understand groundwater flow and its role in the hydrologic cycle, but also sustainable use. In this study, a new high resolution map (5' minutes) of groundwater properties is created for US major aquifers to provide an estimate of total groundwater storage. The estimation was done using information on the spatial extent of the principal aquifers of the US from the USGS Groundwater Atlas, the average porosity of different hydrolithologic groups and the current saturated thickness of each aquifer. Saturated thickness varies within aquifers, and has been calculated by superimposing current water-table contour maps over the base aquifer altitude provided by USGS. The average saturated thickness has been computed by interpolating available data on saturated thickness for an aquifer using the kriging method. Total storage of aquifers in each cell was then calculated by multiplying the spatial extent, porosity, and thickness of the saturated layer. The resulting aquifer storage estimates was compared with current groundwater withdrawal rates to produce an estimate of how many years' worth of water are stored in the aquifers. The resulting storage map will serve as a national dataset for stakeholders to make decisions for sustainable use of groundwater.

A highly efficient CMOS nanoplasmonic crystal enhanced slow-wave thermal emitter improves infrared gas-sensing devices

PubMed Central

Pusch, Andreas; De Luca, Andrea; Oh, Sang S.; Wuestner, Sebastian; Roschuk, Tyler; Chen, Yiguo; Boual, Sophie; Ali, Zeeshan; Phillips, Chris C.; Hong, Minghui; Maier, Stefan A.; Udrea, Florin; Hopper, Richard H.; Hess, Ortwin

2015-01-01

The application of plasmonics to thermal emitters is generally assisted by absorptive losses in the metal because Kirchhoff’s law prescribes that only good absorbers make good thermal emitters. Based on a designed plasmonic crystal and exploiting a slow-wave lattice resonance and spontaneous thermal plasmon emission, we engineer a tungsten-based thermal emitter, fabricated in an industrial CMOS process, and demonstrate its markedly improved practical use in a prototype non-dispersive infrared (NDIR) gas-sensing device. We show that the emission intensity of the thermal emitter at the CO2 absorption wavelength is enhanced almost 4-fold compared to a standard non-plasmonic emitter, which enables a proportionate increase in the signal-to-noise ratio of the CO2 gas sensor. PMID:26639902

Radiative Performance of Rare Earth Garnet Thin Film Selective Emitters

NASA Technical Reports Server (NTRS)

Lowe, Roland A.; Chubb, Donald L.; Good, Brian S.

1994-01-01

In this paper we present the first emitter efficiency results for the thin film 40 percent Er-1.5 percent Ho YAG (Yttrium Aluminum Garnet, Y3Al5O12) and 25 percent Ho YAG selective emitter at 1500 K with a platinum substrate. Spectral emittance and emissive power measurements were made (1.2 less than lambda less than 3.2 microns). Emitter efficiency and power density are significantly improved with the addition of multiple rare earth dopants. Predicted efficiency results are presented for an optimized (equal power density in the Er, (4)I(sub 15/2)-(4)I(sub 13/2) at 1.5 microns, and Ho, (5)I(sub 7)-(5)I(sub 8) at 2.0 micron emission bands) Er-Ho YAG thin film selective emitter.

Emittance of a finite scattering medium with refractive index greater than unity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Crosbie, A.L.

1980-01-01

Refractive index and scattering can significantly influence the transfer of radiation in a semitransparent medium such as water, glass, plastics, or ceramics. In a recent article (1979), the author presented exact numerical results for the emittance of a semiinfinite scattering medium with a refractive index greater than unity. The present investigation extends the analysis to a finite medium. The physical situation consists of a finite planar layer. The isothermal layer emits, absorbs, and isotropically scatters thermal radiation. It is characterized by single scattering albedo, optical thickness, refractive index, and temperature. A formula for the directional emittance is derived, the directionalmore » emittance being the emittance of the medium multiplied by the interface transmittance. The ratio of hemispherical to normal emittance is tabulated and discussed.« less

Fabricating solar cells with silicon nanoparticles

DOEpatents

Loscutoff, Paul; Molesa, Steve; Kim, Taeseok

2014-09-02

A laser contact process is employed to form contact holes to emitters of a solar cell. Doped silicon nanoparticles are formed over a substrate of the solar cell. The surface of individual or clusters of silicon nanoparticles is coated with a nanoparticle passivation film. Contact holes to emitters of the solar cell are formed by impinging a laser beam on the passivated silicon nanoparticles. For example, the laser contact process may be a laser ablation process. In that case, the emitters may be formed by diffusing dopants from the silicon nanoparticles prior to forming the contact holes to the emitters. As another example, the laser contact process may be a laser melting process whereby portions of the silicon nanoparticles are melted to form the emitters and contact holes to the emitters.

Boric acid solution concentration influencing p-type emitter formation in n-type crystalline Si solar cells

NASA Astrophysics Data System (ADS)

Singha, Bandana; Singh Solanki, Chetan

2016-09-01

Boric acid (BA) is a spin on dopant (BSoD) source which is used to form p+ emitters in n-type c-Si solar cells. High purity boric acid powder (99.99% pure) when mixed with deionized (DI) water can result in high quality p-type emitter with less amount of surface defects. In this work, we have used different concentrations of boric acid solution concentrations to fabricate p-type emitters with sheet resistance values < 90 Ω/□. The corresponding junction depths for the same are less than 500 nm as measured by SIMS analysis. Boron rich layer (BRL), which is considered as detrimental in emitter performance is found to be minimal for BA solution concentration less than 2% and hence useful for p-type emitter formation.

The effects of capillary forces on the axisymmetric propagation of two-phase, constant-flux gravity currents in porous media

NASA Astrophysics Data System (ADS)

Golding, Madeleine J.; Huppert, Herbert E.; Neufeld, Jerome A.

2013-03-01

The effects of capillary forces on the propagation of two-phase, constant-flux gravity currents in a porous medium are studied analytically and numerically in an axisymmetric geometry. The fluid within a two-phase current generally only partially saturates the pore space it invades. For long, thin currents, the saturation distribution is set by the vertical balance between gravitational and capillary forces. The capillary pressure and relative permeability of the fluid in the current depend on this saturation. The action of capillary forces reduces the average saturation, thereby decreasing the relative permeability throughout the current. This results in a thicker current, which provides a steeper gradient to drive flow, and a more blunt-nose profile. The relative strength of gravity and capillary forces remains constant within a two-phase gravity current fed by a constant flux and spreading radially, due to mass conservation. For this reason, we use an axisymmetric representation of the framework developed by Golding et al. ["Two-phase gravity currents in porous media," J. Fluid Mech. 678, 248-270 (2011)], 10.1017/jfm.2011.110, to investigate the effect on propagation of varying the magnitude of capillary forces and the pore-size distribution. Scaling analysis indicates that axisymmetric two-phase gravity currents fed by a constant flux propagate like t1/2, similar to their single-phase counterparts [S. Lyle, H. E. Huppert, M. Hallworth, M. Bickle, and A. Chadwick, "Axisymmetric gravity currents in a porous medium," J. Fluid Mech. 543, 293-302 (2005)], 10.1017/S0022112005006713, with the effects of capillary forces encapsulated in the constant of proportionality. As a practical application of our new concepts and quantitative evaluations, we discuss the implications of our results for the process of carbon dioxide (CO2) sequestration, during which gravity currents consisting of supercritical CO2 propagate in rock saturated with aqueous brine. We apply our two-phase model including capillary forces to quantitatively assess seismic images of CO2 spreading at Sleipner underneath the North Sea.

M-I-S solar cell - Theory and experimental results

NASA Technical Reports Server (NTRS)

Childs, R.; Fortuna, J.; Geneczko, J.; Fonash, S. J.

1976-01-01

The paper presents an operating-mode analysis of an MIS solar cell and discusses the advantages which can arise as a result of the use of transport control, field shaping (increased n factor), and zero bias barrier height modification. It is noted that for an n-type semiconductor, it is relatively easy to obtain an enhanced n factor using acceptor-like states without an increase in diode saturation current, the converse being true for p-type semiconductors. Several MIS configurations are examined: an acceptor-like, localized state configuration producing field shaping and no change in diode saturation current, and acceptor-like localized configurations producing field shaping, with a decrease of diode saturation current, in one case, and an increase in the other.

Fibrous selective emitter structures from sol-gel process

NASA Astrophysics Data System (ADS)

Chen, K. C.

1999-03-01

Selective emitters have the potential benefit of high efficiency due to the matching of emission spectra to the response of photovoltaic (PV) cells. Continuous uniform rare-earth oxide selective emitter fibers were successfully fabricated using a viscous solution made from metal organic precursors. Cylindrical- and planar configuration emitter structures were made by direct cross-winding or stacking of precursor fiber layers. The combustion and optical performance of the planar emitter structures were tested. The results indicates that both the designing of the fiber packing density and the thickness is critical for high photon and power output.

Experimental studies on coherent synchrotron radiation at an emittance exchange beam line

NASA Astrophysics Data System (ADS)

Thangaraj, J. C. T.; Thurman-Keup, R.; Ruan, J.; Johnson, A. S.; Lumpkin, A. H.; Santucci, J.

2012-11-01

One of the goals of the Fermilab A0 photoinjector is to investigate experimentally the transverse to longitudinal emittance exchange (EEX) principle. Coherent synchrotron radiation in the emittance exchange line could limit the performance of the emittance exchanger at short bunch lengths. In this paper, we present experimental and simulation studies of the coherent synchrotron radiation (CSR) in the emittance exchange line at the A0 photoinjector. We report on time-resolved CSR studies using a skew-quadrupole technique. We also demonstrate the advantages of running the EEX with an energy-chirped beam.

Emittance Effects on Gain in $W$ -Band TWTs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Carlsten, Bruce Eric; Nichols, Kimberley E.; Shchegolkov, Dmitry Yu.

We consider the main effects of beam emittance on W-band traveling-wave tube (TWT) performance and gain. Specifically, we consider a representative dielectric TWT structure with ~5 dB/cm of gain driven by a 5-A, 20-keV, sheet electron beam that is focused by a wiggler magnetic field. The normalized beam transverse emittance must be about 1 μm or lower to ensure that both the transport is stable and the gain is not degraded by the effective energy spread arising from the emittance. This emittance limit scales roughly inversely with frequency.

Emittance Effects on Gain in $W$ -Band TWTs

DOE PAGES

Carlsten, Bruce Eric; Nichols, Kimberley E.; Shchegolkov, Dmitry Yu.; ...

2016-10-20

We consider the main effects of beam emittance on W-band traveling-wave tube (TWT) performance and gain. Specifically, we consider a representative dielectric TWT structure with ~5 dB/cm of gain driven by a 5-A, 20-keV, sheet electron beam that is focused by a wiggler magnetic field. The normalized beam transverse emittance must be about 1 μm or lower to ensure that both the transport is stable and the gain is not degraded by the effective energy spread arising from the emittance. This emittance limit scales roughly inversely with frequency.

Quantum memory and gates using a Λ -type quantum emitter coupled to a chiral waveguide

NASA Astrophysics Data System (ADS)

Li, Tao; Miranowicz, Adam; Hu, Xuedong; Xia, Keyu; Nori, Franco

2018-06-01

By coupling a Λ -type quantum emitter to a chiral waveguide, in which the polarization of a photon is locked to its propagation direction, we propose a controllable photon-emitter interface for quantum networks. We show that this chiral system enables the swap gate and a hybrid-entangling gate between the emitter and a flying single photon. It also allows deterministic storage and retrieval of single-photon states with high fidelities and efficiencies. In short, this chirally coupled emitter-photon interface can be a critical building block toward a large-scale quantum network.

The Effect of Temperature on the Radiative Performance of Ho-Yag Thin Film Selective Emitters

NASA Technical Reports Server (NTRS)

Lowe, Roland A.; Chubb, Donald L.; Good, Brian S.

1995-01-01

We present the emitter efficiency results for the thin film 25 percent Ho YAG (Yttrium Aluminum Garnet, Y3Al5O12) selective emitter from 1000 to 1700 K with a platinum substrate. Spectral emittance and emissive power measurements were made (1.2 less than lambda less than 3.2 microns) and used to calculate the radiative efficiency. The radiative efficiency and power density of rare earth doped selective emitters are strongly dependent on temperature and experimental results indicate an optimum temperature (1650 K for Ho YAG) for thermophotovoltaic (TPV) applications.

Method of manufacturing a hybrid emitter all back contact solar cell

DOEpatents

Loscutoff, Paul; Rim, Seung

2017-02-07

A method of manufacturing an all back contact solar cell which has a hybrid emitter design. The solar cell has a thin dielectric layer formed on a backside surface of a single crystalline silicon substrate. One emitter of the solar cell is made of doped polycrystalline silicon that is formed on the thin dielectric layer. A second emitter of the solar cell is formed in the single crystalline silicon substrate and is made of doped single crystalline silicon. The method further includes forming contact holes that allow metal contacts to connect to corresponding emitters.

Wedge Absorbers for Final Cooling for a High-Energy High-Luminosity Lepton Collider

DOE Office of Scientific and Technical Information (OSTI.GOV)

Neuffer, David; Mohayai, Tanaz; Snopok, Pavel

2016-06-01

A high-energy high-luminosity muon collider scenario requires a "final cooling" system that reduces transverse emittance to ~25 microns (normalized) while allowing longitudinal emittance increase. Ionization cooling using high-field solenoids (or Li Lens) can reduce transverse emittances to ~100 microns in readily achievable configurations, confirmed by simulation. Passing these muon beams at ~100 MeV/c through cm-sized diamond wedges can reduce transverse emittances to ~25 microns, while increasing longitudinal emittance by a factor of ~5. Implementation will require optical matching of the exiting beam into downstream acceleration systems.

Development of chemically vapor deposited rhenium emitters of (0001) preferred crystal orientation

NASA Technical Reports Server (NTRS)

Yang, L.; Hudson, R. G.

1973-01-01

Rhenium thermionic emitters were prepared by the pyrolysis of rhenium chlorides formed by the chlorination of rhenium pellets. The impurity contents, microstructures, degrees of (0001) preferred crystal orientation, and vacuum electron work functions of these emitters were determined as a function of deposition parameters, such as substrate temperature, rhenium pellet temperature and chlorine flow rate. A correlation between vacuum electron work function and degree of (0001) preferred crystal orientation was established. Conditions for depositing porosity-free rhenium emitters of high vacuum electron work functions were defined. Finally, three cylindrical rhenium emitters were prepared under the optimum deposition conditions.

Analysis of induced electrical currents from magnetic field coupling inside implantable neurostimulator leads.

PubMed

Pantchenko, Oxana S; Seidman, Seth J; Guag, Joshua W

2011-10-21

Over the last decade, the number of neurostimulator systems implanted in patients has been rapidly growing. Nearly 50, 000 neurostimulators are implanted worldwide annually. The most common type of implantable neurostimulators is indicated for pain relief. At the same time, commercial use of other electromagnetic technologies is expanding, making electromagnetic interference (EMI) of neurostimulator function an issue of concern. Typically reported sources of neurostimulator EMI include security systems, metal detectors and wireless equipment. When near such sources, patients with implanted neurostimulators have reported adverse events such as shock, pain, and increased stimulation. In recent in vitro studies, radio frequency identification (RFID) technology has been shown to inhibit the stimulation pulse of an implantable neurostimulator system during low frequency exposure at close distances. This could potentially be due to induced electrical currents inside the implantable neurostimulator leads that are caused by magnetic field coupling from the low frequency identification system. To systematically address the concerns posed by EMI, we developed a test platform to assess the interference from coupled magnetic fields on implantable neurostimulator systems. To measure interference, we recorded the output of one implantable neurostimulator, programmed for best therapy threshold settings, when in close proximity to an operating low frequency RFID emitter. The output contained electrical potentials from the neurostimulator system and those induced by EMI from the RFID emitter. We also recorded the output of the same neurostimulator system programmed for best therapy threshold settings without RFID interference. Using the Spatially Extended Nonlinear Node (SENN) model, we compared threshold factors of spinal cord fiber excitation for both recorded outputs. The electric current induced by low frequency RFID emitter was not significant to have a noticeable effect on electrical stimulation. We demonstrated a method for analyzing effects of coupled magnetic field interference on implantable neurostimulator system and its electrodes which could be used by device manufacturers during the design and testing phases of the development process.

High Power Laser Diode Array Qualification and Guidelines for Space Flight Environments

NASA Technical Reports Server (NTRS)

Eegholm, Niels; Ott, Melanie; Stephen, Mark; Leidecker, Henning

2005-01-01

Semiconductor laser diodes emit coherent light by simulated emission generated inside the cavity formed by the cleaved end facets of a slab of semiconductor that is typically less than a millimeter in any dimension for single emitters. The diode is pumped by current injection in the p-n junction through the metallic contacts. Laser diodes emitting in the range of 0.8 micron to 1.06 micron have a wide variety of applications from pumping erbium doped fiber amplifiers, dual-clad fiber lasers, solid-state lasers used in telecom, aerospace, military, medical purposes and all the way to CD players, laser printers and other consumer and industrial products. Laser diode bars have many single emitters side by side and spaced approximately .5 mm on a single slab of semiconductor material approximately .5 mm x 10 mm. The individual emitters are connected in parallel maintaining the voltage at -2V but increasing the current to 50-100A/bar. Stacking these laser diode bars in multiple layers, 2 to 20+ high, yields high power laser diode arrays capable of emitting several hundreds of Watts. Electrically the bars are wired in series increasing the voltage by 2V/bar but maintaining the total current at 50-100A. These arrays are one of the enabling technologies for efficient, high power solid-state lasers. Traditionally these arrays are operated in QCW (Quasi CW) mode with pulse widths 10-200 (mu)s and with repetition rates of 10-200Hz. In QCW mode the wavelength and the output power of the laser reaches steady-state but the temperature does not. The advantage is a substantially higher output power than in CW mode, where the output power would be limited by the internal heating and hence the thermal and heat sinking properties of the device. The down side is a much higher thermal induced mechanical stress caused by the constant heating and cooling cycle inherent to the QCW mode.

Analysis of induced electrical currents from magnetic field coupling inside implantable neurostimulator leads

PubMed Central

2011-01-01

Background Over the last decade, the number of neurostimulator systems implanted in patients has been rapidly growing. Nearly 50, 000 neurostimulators are implanted worldwide annually. The most common type of implantable neurostimulators is indicated for pain relief. At the same time, commercial use of other electromagnetic technologies is expanding, making electromagnetic interference (EMI) of neurostimulator function an issue of concern. Typically reported sources of neurostimulator EMI include security systems, metal detectors and wireless equipment. When near such sources, patients with implanted neurostimulators have reported adverse events such as shock, pain, and increased stimulation. In recent in vitro studies, radio frequency identification (RFID) technology has been shown to inhibit the stimulation pulse of an implantable neurostimulator system during low frequency exposure at close distances. This could potentially be due to induced electrical currents inside the implantable neurostimulator leads that are caused by magnetic field coupling from the low frequency identification system. Methods To systematically address the concerns posed by EMI, we developed a test platform to assess the interference from coupled magnetic fields on implantable neurostimulator systems. To measure interference, we recorded the output of one implantable neurostimulator, programmed for best therapy threshold settings, when in close proximity to an operating low frequency RFID emitter. The output contained electrical potentials from the neurostimulator system and those induced by EMI from the RFID emitter. We also recorded the output of the same neurostimulator system programmed for best therapy threshold settings without RFID interference. Using the Spatially Extended Nonlinear Node (SENN) model, we compared threshold factors of spinal cord fiber excitation for both recorded outputs. Results The electric current induced by low frequency RFID emitter was not significant to have a noticeable effect on electrical stimulation. Conclusions We demonstrated a method for analyzing effects of coupled magnetic field interference on implantable neurostimulator system and its electrodes which could be used by device manufacturers during the design and testing phases of the development process. PMID:22014169

Photonically engineered incandescent emitter

DOEpatents

Gee, James M.; Lin, Shawn-Yu; Fleming, James G.; Moreno, James B.

2003-08-26

A photonically engineered incandescence is disclosed. The emitter materials and photonic crystal structure can be chosen to modify or suppress thermal radiation above a cutoff wavelength, causing the emitter to selectively emit in the visible and near-infrared portions of the spectrum. An efficient incandescent lamp is enabled thereby. A method for fabricating a three-dimensional photonic crystal of a structural material, suitable for the incandescent emitter, is also disclosed.

Photonically Engineered Incandescent Emitter

DOEpatents

Gee, James M.; Lin, Shawn-Yu; Fleming, James G.; Moreno, James B.

2005-03-22

A photonically engineered incandescence is disclosed. The emitter materials and photonic crystal structure can be chosen to modify or suppress thermal radiation above a cutoff wavelength, causing the emitter to selectively emit in the visible and near-infrared portions of the spectrum. An efficient incandescent lamp is enabled thereby. A method for fabricating a three-dimensional photonic crystal of a structural material, suitable for the incandescent emitter, is also disclosed.

Three-peak standard white organic light-emitting devices for solid-state lighting

NASA Astrophysics Data System (ADS)

Guo, Kunping; Wei, Bin

2014-12-01

Standard white organic light-emitting device (OLED) lighting provides a warm and comfortable atmosphere and shows mild effect on melatonin suppression. A high-efficiency red OLED employing phosphorescent dopant has been investigated. The device generates saturated red emission with Commission Internationale de l'Eclairage (CIE) coordinates of (0.66, 0.34), characterized by a low driving voltage of 3.5 V and high external quantum efficiency of 20.1% at 130 cd m-2. In addition, we have demonstrated a two-peak cold white OLED by combining with a pure blue emitter with the electroluminescent emission of 464 nm, 6, 12-bis{[N-(3,4-dimethylpheyl)-N-(2,4,5-trimethylphenyl)]} chrysene (BmPAC). It was found that the man-made lighting device capable of yielding a relatively stable color emission within the luminance range of 1000-5000 cd m-2. And the chromaticity coordinates, varying from (0.25, 0.21) to (0.23, 0.21). Furthermore, an ultrathin layer of green-light-emitting tris (2-phenylpyridinato)iridium(Ⅲ) Ir(ppy)3 in the host material was introduced to the emissive region for compensating light. By appropriately controlling the layer thickness, the white light OLED achieved good performance of 1280 cd m-2 at 5.0 V and 5150 cd m-2 at 7.0 V, respectively. The CIE coordinates of the emitted light are quite stable at current densities from 759 cd m-2 to 5150 cd m-2, ranging from (0.34, 0.37) to (0.33, 0.33).

Memory characteristics of ring-shaped ceramic superconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Takeoka, A.; Hasunuma, M.; Sakaiya, S.

1989-03-01

For the practical application of ceramic superconductors, the authors investigated the residual magnetic field characteristics of ring-shaped ceramic superconductors in a Y-Ba-Cu-O system with high Tc. The residual magnetic field of a ring with asymmetric current paths, supplied by external currents, appeared when one of the branch currents was above the critical current. The residual magnetic field saturated when both brach currents exceeded the critical current of the ring and showed hysteresis-like characteristics. The saturated magnetic field is subject to the critical current of the ring. A superconducting ring with asymmetric current paths suggests a simple and quite new persistent-currentmore » type memory device.« less

Cage-rotor induction motor inter-turn short circuit fault detection with and without saturation effect by MEC model.

PubMed

Naderi, Peyman

2016-09-01

The inter-turn short fault for the Cage-Rotor-Induction-Machine (CRIM) is studied in this paper and its local saturation is taken into account. However, in order to observe the exact behavior of machine, the Magnetic-Equivalent-Circuit (MEC) and nonlinear B-H curve are proposed to provide an insight into the machine model and saturation effect respectively. The electrical machines are generally operated near to their saturation zone due to some design necessities. Hence, when the machine is exposed to a fault such as short circuit or eccentricities, it is operated within its saturation zone and thus, time and space harmonics are integrated and as a result, current and torque harmonics are generated which the phenomenon cannot be explored when saturation is dismissed. Nonetheless, inter-turn short circuit may lead to local saturation and this occurrence is studied in this paper using MEC model. In order to achieve the mentioned objectives, two and also four-pole machines are modeled as two samples and the machines performances are analyzed in healthy and faulty cases with and without saturation effect. A novel strategy is proposed to precisely detect inter-turn short circuit fault according to the stator׳s lines current signatures and the accuracy of the proposed method is verified by experimental results. Copyright © 2016 ISA. Published by Elsevier Ltd. All rights reserved.

Strong coupling of collection of emitters on hyperbolic meta-material

NASA Astrophysics Data System (ADS)

Biehs, Svend-Age; Xu, Chenran; Agarwal, Girish S.

2018-04-01

Recently, considerable effort has been devoted to the realization of a strong coupling regime of the radiation matter interaction in the context of an emitter at a meta surface. The strong interaction is well realized in cavity quantum electrodynamics, which also show that strong coupling is much easier to realize using a collection of emitters. Keeping this in mind, we study if emitters on a hyperbolic meta materials can yield a strong coupling regime. We show that strong coupling can be realized for densities of emitters exceeding a critical value. A way to detect strong coupling between emitters and hyperbolic metamaterials is to use the Kretschman-Raether configuration. The strong coupling appears as the splitting of the reflectivity dip. In the weak coupling regime, the dip position shifts. The shift and splitting can be used to sense active molecules at surfaces.

Robust Radar Emitter Recognition Based on the Three-Dimensional Distribution Feature and Transfer Learning

PubMed Central

Yang, Zhutian; Qiu, Wei; Sun, Hongjian; Nallanathan, Arumugam

2016-01-01

Due to the increasing complexity of electromagnetic signals, there exists a significant challenge for radar emitter signal recognition. To address this challenge, multi-component radar emitter recognition under a complicated noise environment is studied in this paper. A novel radar emitter recognition approach based on the three-dimensional distribution feature and transfer learning is proposed. The cubic feature for the time-frequency-energy distribution is proposed to describe the intra-pulse modulation information of radar emitters. Furthermore, the feature is reconstructed by using transfer learning in order to obtain the robust feature against signal noise rate (SNR) variation. Last, but not the least, the relevance vector machine is used to classify radar emitter signals. Simulations demonstrate that the approach proposed in this paper has better performances in accuracy and robustness than existing approaches. PMID:26927111

Deterministic Coupling of Quantum Emitters in 2D Materials to Plasmonic Nanocavity Arrays.

PubMed

Tran, Toan Trong; Wang, Danqing; Xu, Zai-Quan; Yang, Ankun; Toth, Milos; Odom, Teri W; Aharonovich, Igor

2017-04-12

Quantum emitters in two-dimensional materials are promising candidates for studies of light-matter interaction and next generation, integrated on-chip quantum nanophotonics. However, the realization of integrated nanophotonic systems requires the coupling of emitters to optical cavities and resonators. In this work, we demonstrate hybrid systems in which quantum emitters in 2D hexagonal boron nitride (hBN) are deterministically coupled to high-quality plasmonic nanocavity arrays. The plasmonic nanoparticle arrays offer a high-quality, low-loss cavity in the same spectral range as the quantum emitters in hBN. The coupled emitters exhibit enhanced emission rates and reduced fluorescence lifetimes, consistent with Purcell enhancement in the weak coupling regime. Our results provide the foundation for a versatile approach for achieving scalable, integrated hybrid systems based on low-loss plasmonic nanoparticle arrays and 2D materials.

Impact of dopant concentrations on emitter formation with spin on dopant source in n-type crystalline silicon solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singha, Bandana; Solanki, Chetan Singh

Use of a suitable dopant source for emitter formation is an essential requirement in n-type crystalline silicon solar cells. Boron spin on dopant source, used as alternative to mostly used BBr{sub 3} liquid source, can yield an emitter with less diffusion induced defects under controlled conditions. Different concentrations of commercially available spin on dopant source is used and optimized in this work for sheet resistance values of the emitter ranging from 30 Ω/□ to 70 Ω/□ with emitter doping concentrations suitable for ohmic contacts. The dopant concentrations diluted with different ratios improves the carrier lifetime and thus improves the emittermore » performance. Hence use of suitable dopant source is essential in forming emitters in n-type crystalline silicon solar cells.« less