Semiconductor-based, large-area, flexible, electronic devices

DOEpatents

Goyal, Amit [Knoxville, TN

2011-03-15

Novel articles and methods to fabricate the same resulting in flexible, large-area, triaxially textured, single-crystal or single-crystal-like, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

Semiconductor-based, large-area, flexible, electronic devices on {110}<100> oriented substrates

DOEpatents

Goyal, Amit

2014-08-05

Novel articles and methods to fabricate the same resulting in flexible, oriented, semiconductor-based, electronic devices on {110}<100> textured substrates are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

[100] or [110] aligned, semiconductor-based, large-area, flexible, electronic devices

DOEpatents

Goyal, Amit

2015-03-24

Novel articles and methods to fabricate the same resulting in flexible, large-area, [100] or [110] textured, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

Efficient OLEDs Fabricated by Solution Process Based on Carbazole and Thienopyrrolediones Derivatives.

PubMed

Lozano-Hernández, Luis-Abraham; Maldonado, José-Luis; Garcias-Morales, Cesar; Espinosa Roa, Arian; Barbosa-García, Oracio; Rodríguez, Mario; Pérez-Gutiérrez, Enrique

2018-01-30

Four low molecular weight compounds-three of them new, two of them with carbazole (Cz) as functional group and the other two with thienopyrroledione (TPD) group-were used as emitting materials in organic light emitting diodes (OLEDs). Devices were fabricated with the configuration ITO/PEDOT:PSS/emitting material/LiF/Al. The hole injector layer (HIL) and the emitting sheet were deposited by spin coating; LiF and Al were thermally evaporated. OLEDs based on carbazole derivatives show luminances up to 4130 cd/m², large current efficiencies about 20 cd/A and, cautiously, a very impressive External Quantum Efficiency (EQE) up to 9.5%, with electroluminescence peaks located around 490 nm (greenish blue region). Whereas, devices manufactured with TPD derivatives, present luminance up to 1729 cd/m², current efficiencies about 4.5 cd/A and EQE of 1.5%. These results are very competitive regarding previous reported materials/devices.

Dual functions of a new n-type conjugated dendrimer: light-emitting material and additive for polymer electroluminescent devices

NASA Astrophysics Data System (ADS)

Hyeok Park, Jong; Kim, Chulhee; Kim, Young Chul

2009-02-01

We demonstrate a novel light-emitting diode (LED) of a graded bilayer structure that comprises poly(N-vinylcarbazole) (PVK) with good hole transport ability as the energy donor and a new distyrylanthracene-triazine-based dendrimer with enhanced electron transport ability as the light-emitting molecule. The device contains a graded bilayer structure of the PVK film covered with the dendrimer film prepared by sequential spin-casting of the dendrimer layer from a solvent that only swells the PVK layer. The bilayer device demonstrated a significantly enhanced electoluminescence quantum efficiency compared with the dendrimer single layer device or the PVK : dendrimer blend device with optimized composition. We also prepared composite LEDs with an MEH-PPV : emissive dendrimer blend. By doping the electron-deficient MEH-PPV layer with a small amount of the distyrylanthracene-triazine-based dendrimer, we could not only enhance the device performance but also depress the long-wavelength emission of MEH-PPV.

Fused Methoxynaphthyl Phenanthrimidazole Semiconductors as Functional Layer in High Efficient OLEDs.

PubMed

Jayabharathi, Jayaraman; Ramanathan, Periyasamy; Karunakaran, Chockalingam; Thanikachalam, Venugopal

2016-01-01

Efficient hole transport materials based on novel fused methoxynaphthyl phenanthrimidazole core structure were synthesised and characterized. Their device performances in phosphorescent organic light emitting diodes were investigated. The high thermal stability in combination with the reversible oxidation process made promising candidates as hole-transporting materials for organic light-emitting devices. Highly efficient Alq3-based organic light emitting devices have been developed using phenanthrimidazoles as functional layers between NPB [4,4-bis(N-(1-naphthyl)-N-phenylamino)biphenyl] and Alq3 [tris(8-hydroxyquinoline)aluminium] layers. Using the device of ITO/NPB/4/Alq3/LiF/Al, a maximum luminous efficiency of 5.99 cd A(-1) was obtained with a maximum brightness of 40,623 cd m(-2) and a power efficiency of 5.25 lm W(-1).

Intensity noise properties of a compact laser device based on a miniaturized MOPA system for spectroscopic applications

NASA Astrophysics Data System (ADS)

Baumgärtner, S.; Juhl, S.; Opalevs, D.; Sahm, A.; Hofmann, J.; Leisching, P.; Paschke, K.

2018-02-01

We present a novel compact laser device based on a semiconductor master-oscillator power-amplifier (MOPA) emitting at 772 nm, suitable for quantum optic and spectroscopy. The optical performance of the laser device is characterized. For miniaturized lasers the thermal management is challenging, we therefore perform thermal simulations and measurements. The first demonstrator is emitting more than 3 W optical power with a linewidth below 2lMHz. Using this MOPA design also compact devices for quantum optics (e.g. rubidium atomic clock) and seed lasers for frequency conversion can be realized [1].

{100}<100> or 45.degree.-rotated {100}<100>, semiconductor-based, large-area, flexible, electronic devices

DOEpatents

Goyal, Amit [Knoxville, TN

2012-05-15

Novel articles and methods to fabricate the same resulting in flexible, {100}<100> or 45.degree.-rotated {100}<100> oriented, semiconductor-based, electronic devices are disclosed. Potential applications of resulting articles are in areas of photovoltaic devices, flat-panel displays, thermophotovoltaic devices, ferroelectric devices, light emitting diode devices, computer hard disc drive devices, magnetoresistance based devices, photoluminescence based devices, non-volatile memory devices, dielectric devices, thermoelectric devices and quantum dot laser devices.

Light-emitting block copolymers composition, process and use

DOEpatents

Ferraris, John P.; Gutierrez, Jose J.

2006-11-14

Generally, and in one form, the present invention is a composition of light-emitting block copolymer. In another form, the present invention is a process producing a light-emitting block copolymers that intends polymerizing a first di(halo-methyl) aromatic monomer compound in the presence of an anionic initiator and a base to form a polymer and contacting a second di(halo-methyl) aromatic monomer compound with the polymer to form a homopolymer or block copolymer wherein the block copolymer is a diblock, triblock, or star polymer. In yet another form, the present invention is an electroluminescent device comprising a light-emitting block copolymer, wherein the electroluminescent device is to be used in the manufacturing of optical and electrical devices.

Full color organic light-emitting devices with microcavity structure and color filter.

PubMed

Zhang, Weiwei; Liu, Hongyu; Sun, Runguang

2009-05-11

This letter demonstrated the fabrication of the full color passive matrix organic light-emitting devices based on the combination of the microcavity structure, color filter and a common white polymeric OLED. In the microcavity structure, patterned ITO terraces with different thickness were used as the anode as well as cavity spacer. The primary color emitting peaks were originally generated by the microcavity and then the second resonance peak was absorbed by the color filter.

High power ultraviolet light emitting diodes based on GaN /AlGaN quantum wells produced by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Cabalu, J. S.; Bhattacharyya, A.; Thomidis, C.; Friel, I.; Moustakas, T. D.; Collins, C. J.; Komninou, Ph.

2006-11-01

In this paper, we report on the growth by molecular beam epitaxy and fabrication of high power nitride-based ultraviolet light emitting diodes emitting in the spectral range between 340 and 350nm. The devices were grown on (0001) sapphire substrates via plasma-assisted molecular beam epitaxy. The growth of the light emitting diode (LED) structures was preceded by detailed materials studies of the bottom n-AlGaN contact layer, as well as the GaN /AlGaN multiple quantum well (MQW) active region. Specifically, kinetic conditions were identified for the growth of the thick n-AlGaN films to be both smooth and to have fewer defects at the surface. Transmission-electron microscopy studies on identical GaN /AlGaN MQWs showed good quality and well-defined interfaces between wells and barriers. Large area mesa devices (800×800μm2) were fabricated and were designed for backside light extraction. The LEDs were flip-chip bonded onto a Si submount for better heat sinking. For devices emitting at 340nm, the measured differential on-series resistance is 3Ω with electroluminescence spectrum full width at half maximum of 18nm. The output power under dc bias saturates at 0.5mW, while under pulsed operation it saturates at approximately 700mA to a value of 3mW, suggesting that thermal heating limits the efficiency of these devices. The output power of the investigated devices was found to be equivalent with those produced by the metal-organic chemical vapor deposition and hydride vapor-phase epitaxy methods. The devices emitting at 350nm were investigated under dc operation and the output power saturates at 4.5mW under 200mA drive current.

Absorbance Based Light Emitting Diode Optical Sensors and Sensing Devices

PubMed Central

O'Toole, Martina; Diamond, Dermot

2008-01-01

The ever increasing demand for in situ monitoring of health, environment and security has created a need for reliable, miniaturised sensing devices. To achieve this, appropriate analytical devices are required that possess operating characteristics of reliability, low power consumption, low cost, autonomous operation capability and compatibility with wireless communications systems. The use of light emitting diodes (LEDs) as light sources is one strategy, which has been successfully applied in chemical sensing. This paper summarises the development and advancement of LED based chemical sensors and sensing devices in terms of their configuration and application, with the focus on transmittance and reflectance absorptiometric measurements. PMID:27879829

Absorbance Based Light Emitting Diode Optical Sensors and Sensing Devices.

PubMed

O'Toole, Martina; Diamond, Dermot

2008-04-07

The ever increasing demand for in situ monitoring of health, environment and security has created a need for reliable, miniaturised sensing devices. To achieve this, appropriate analytical devices are required that possess operating characteristics of reliability, low power consumption, low cost, autonomous operation capability and compatibility with wireless communications systems. The use of light emitting diodes (LEDs) as light sources is one strategy, which has been successfully applied in chemical sensing. This paper summarises the development and advancement of LED based chemical sensors and sensing devices in terms of their configuration and application, with the focus on transmittance and reflectance absorptiometric measurements.

Efficient and Stable CsPb(Br/I)3@Anthracene Composites for White Light-Emitting Devices.

PubMed

Shen, Xinyu; Sun, Chun; Bai, Xue; Zhang, Xiaoyu; Wang, Yu; Wang, Yiding; Song, Hongwei; Yu, William W

2018-05-16

Inorganic perovskite quantum dots bear many unique properties that make them potential candidates for optoelectronic applications, including color display and lighting. However, the white emission with inorganic perovskite quantum dots has rarely been realized due to the anion-exchange reaction. Here, we proposed a one-pot preparation to fabricate inorganic perovskite quantum dot-based white light-emitting composites by introducing anthracene as a blue emission component. The as-prepared white light-emitting composite exhibited a photoluminescence quantum yield of 41.9%. By combining CsPb(Br/I) 3 @anthracene composites with UV light-emitting device (LED) chips, white light-emitting devices with a color rendering index of 90 were realized with tunable color temperature from warm white to cool white. These results can promote the application of inorganic perovskite quantum dots in the field of white LEDs.

Monolayer Transition Metal Dichalcogenides as Light Sources.

PubMed

Pu, Jiang; Takenobu, Taishi

2018-06-13

Reducing the dimensions of materials is one of the key approaches to discovering novel optical phenomena. The recent emergence of 2D transition metal dichalcogenides (TMDCs) has provided a promising platform for exploring new optoelectronic device applications, with their tunable electronic properties, structural controllability, and unique spin valley-coupled systems. This progress report provides an overview of recent advances in TMDC-based light-emitting devices discussed from several aspects in terms of device concepts, material designs, device fabrication, and their diverse functionalities. First, the advantages of TMDCs used in light-emitting devices and their possible functionalities are presented. Second, conventional approaches for fabricating TMDC light-emitting devices are emphasized, followed by introducing a newly established, versatile method for generating light emission in TMDCs. Third, current growing technologies for heterostructure fabrication, in which distinct TMDCs are vertically stacked or laterally stitched, are explained as a possible means for designing high-performance light-emitting devices. Finally, utilizing the topological features of TMDCs, the challenges for controlling circularly polarized light emission and its device applications are discussed from both theoretical and experimental points of view. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Polymer and small molecule based hybrid light source

DOEpatents

Choong, Vi-En; Choulis, Stelios; Krummacher, Benjamin Claus; Mathai, Mathew; So, Franky

2010-03-16

An organic electroluminescent device, includes: a substrate; a hole-injecting electrode (anode) coated over the substrate; a hole injection layer coated over the anode; a hole transporting layer coated over the hole injection layer; a polymer based light emitting layer, coated over the hole transporting layer; a small molecule based light emitting layer, thermally evaporated over the polymer based light emitting layer; and an electron-injecting electrode (cathode) deposited over the electroluminescent polymer layer.

Green-light-emitting electroluminescent device based on a new cadmium complex

NASA Astrophysics Data System (ADS)

Kumar, Rahul; Srivastava, Ritu; Kumar, Akshay; Kamalasanan, M. N.; Singh, K.

2010-06-01

A new cadmium complex is synthesized to investigate its stability and applicability for a luminescent device. The as-prepared Cd(Bpy)q sample is characterized by Fourier-transformed infra-red spectroscopy (FTIR), thermal gravimetric analyzer (TGA) and photoluminescence (PL). The prepared sample shows excellent thermal stability up to 380 °C. A maximum is observed at 240 nm in absorption spectra which is attributed to the π-π* transition. An organic-light-emitting diode (OLED) has been fabricated using this material. The fundamental structures of the device exhibit ITO/α-NPD/Cd(Bpy)q/BCP/Alq3/LiF/Al. The electroluminescence (EL) device emits bright green light with maximum luminescence 1683 cd/m2 at 20 V.

Ultra-thin ohmic contacts for p-type nitride light emitting devices

DOEpatents

Raffetto, Mark [Raleigh, NC; Bharathan, Jayesh [Cary, NC; Haberern, Kevin [Cary, NC; Bergmann, Michael [Chapel Hill, NC; Emerson, David [Chapel Hill, NC; Ibbetson, James [Santa Barbara, CA; Li, Ting [Ventura, CA

2012-01-03

A semiconductor based Light Emitting Device (LED) can include a p-type nitride layer and a metal ohmic contact, on the p-type nitride layer. The metal ohmic contact can have an average thickness of less than about 25 .ANG. and a specific contact resistivity less than about 10.sup.-3 ohm-cm.sup.2.

Dynamics of electronic transitions and frequency dependence of negative capacitance in semiconductor diodes under high forward bias

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bansal, Kanika; Datta, Shouvik; Henini, Mohamed

2014-09-22

We observed qualitatively dissimilar frequency dependence of negative capacitance under high charge injection in two sets of functionally different junction diodes: III-V based light emitting and Si-based non-light emitting diodes. Using an advanced approach based on bias activated differential capacitance, we developed a generalized understanding of negative capacitance phenomenon which can be extended to any diode based device structure. We explained the observations as the mutual competition of fast and slow electronic transition rates which are different in different devices. This study can be useful in understanding the interfacial effects in semiconductor heterostructures and may lead to superior device functionality.

Light emitting ceramic device and method for fabricating the same

DOEpatents

Valentine, Paul; Edwards, Doreen D.; Walker Jr., William John; Slack, Lyle H.; Brown, Wayne Douglas; Osborne, Cathy; Norton, Michael; Begley, Richard

2004-11-30

A light-emitting ceramic based panel, hereafter termed "electroceramescent" panel, and alternative methods of fabrication for the same are claimed. The electroceramescent panel is formed on a substrate providing mechanical support as well as serving as the base electrode for the device. One or more semiconductive ceramic layers directly overlay the substrate, and electrical conductivity and ionic diffusion are controlled. Light emitting regions overlay the semiconductive ceramic layers, and said regions consist sequentially of a layer of a ceramic insulation layer and an electroluminescent layer, comprised of doped phosphors or the equivalent. One or more conductive top electrode layers having optically transmissive areas overlay the light emitting regions, and a multi-layered top barrier cover comprising one or more optically transmissive non-combustible insulation layers overlay said top electrode regions.

Organic light-emitting devices using spin-dependent processes

DOEpatents

Vardeny, Z. Valy; Wohlgenannt, Markus

2010-03-23

The maximum luminous efficiency of organic light-emitting materials is increased through spin-dependent processing. The technique is applicable to all electro-luminescent processes in which light is produced by singlet exciton decay, and all devices which use such effects, including LEDs, super-radiant devices, amplified stimulated emission devices, lasers, other optical microcavity devices, electrically pumped optical amplifiers, and phosphorescence (Ph) based light emitting devices. In preferred embodiments, the emissive material is doped with an impurity, or otherwise modified, to increase the spin-lattice relaxation rate (i.e., decrease the spin-lattice time), and hence raise the efficiency of the device. The material may be a polymer, oligomer, small molecule, single crystal, molecular crystal, or fullerene. The impurity is preferably a magnetic or paramagnetic substance. The invention is applicable to IR, UV, and other electromagnetic radiation generation and is thus not limited to the visible region of the spectrum. The methods of the invention may also be combined with other techniques used to improve device performance.

Modulation characteristics of graphene-based thermal emitters

NASA Astrophysics Data System (ADS)

Mahlmeister, Nathan Howard; Lawton, Lorreta Maria; Luxmoore, Isaac John; Nash, Geoffrey Richard

2016-01-01

We have investigated the modulation characteristics of the emission from a graphene-based thermal emitter both experimentally and through simulations using finite element method modelling. Measurements were performed on devices containing square multilayer graphene emitting areas, with the devices driven by a pulsed DC drive current over a range of frequencies. Simulations show that the dominant heat path is from the emitter to the underlying substrate, and that the thermal resistance between the graphene and the substrate determines the modulation characteristics. This is confirmed by measurements made on devices in which the emitting area is encapsulated by hexagonal boron nitride.

Salt-Doped Polymer Light-Emitting Devices

NASA Astrophysics Data System (ADS)

Gautier, Bathilde

Polymer Light-Emitting Electrochemical Cells (PLECs) are solid state devices based on the in situ electrochemical doping of the luminescent polymer and the formation of a p-n junction where light is emitted upon the application of a bias current or voltage. PLECs answer the drawbacks of polymer light-emitting diodes as they do not require an ultra-thin active layer nor are they reliant on low work function cathode materials that are air unstable. However, because of the dynamic nature of the doping, they suffer from slow response times and poor stability over time. Frozen-junction PLECs offer a solution to these drawbacks, yet they are impractical due to their sub-ambient operation temperature requirement. Our work presented henceforth aims to achieve room temperature frozen-junction PLECS. In order to do that we removed the ion solvating/transporting polymer from the active layer, resulting in a luminescent polymer combined solely with a salt sandwiched between an ITO electrode and an aluminum electrode. The resulting device was not expected to operate like a PLEC due to the absence of an ion-solvating and ion-transporting medium. However, we discovered that the polymer/salt devices could be activated by applying a large voltage bias, resulting in much higher current and luminance. More important, the activated state is quasi static. Devices based on the well-known orange-emitting polymer MEH-PPV displayed a luminance storage half-life of 150 hours when activated by forward bias (ITO biased positively with respect to the aluminum) and 200 hours when activated by reverse bias. More remarkable yet, devices based on a green co-polymer displayed no notable decay in current density or luminance even after being stored for 1200 hours at room temperature! PL imaging under UV excitation demonstrates the presence of doping. These devices are described herein along with an explanation of their operating mechanisms.

High efficiency yellow organic light-emitting diodes with optimized barrier layers

NASA Astrophysics Data System (ADS)

Mu, Ye; Zhang, Shiming; Yue, Shouzhen; Wu, Qingyang; Zhao, Yi

2015-12-01

High efficiency Iridium (III) bis (4-phenylthieno [3,2-c] pyridinato-N,C2‧) acetylacetonate (PO-01) based yellow organic light-emitting devices are fabricated by employing multiple emission layers. The efficiency of the device using 4,4‧,4″-tris(N-carbazolyl) triphenylamine (TCTA) as potential barrier layer (PBL) outperforms those devices based on other PBLs and detailed analysis is carried out to reveal the mechanisms. A forward-viewing current efficiency (CE) of 65.21 cd/A, which corresponds to a maximum total CE of 110.85 cd/A is achieved at 335.8 cd/m2 in the optimized device without any outcoupling enhancement structures.

Efficient semiconductor light-emitting device and method

DOEpatents

Choquette, Kent D.; Lear, Kevin L.; Schneider, Jr., Richard P.

1996-01-01

A semiconductor light-emitting device and method. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL).

Efficient semiconductor light-emitting device and method

DOEpatents

Choquette, K.D.; Lear, K.L.; Schneider, R.P. Jr.

1996-02-20

A semiconductor light-emitting device and method are disclosed. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL). 12 figs.

Highly Flexible and Efficient Fabric-Based Organic Light-Emitting Devices for Clothing-Shaped Wearable Displays.

PubMed

Choi, Seungyeop; Kwon, Seonil; Kim, Hyuncheol; Kim, Woohyun; Kwon, Jung Hyun; Lim, Myung Sub; Lee, Ho Seung; Choi, Kyung Cheol

2017-07-25

Recently, the role of clothing has evolved from merely body protection, maintaining the body temperature, and fashion, to advanced functions such as various types of information delivery, communication, and even augmented reality. With a wireless internet connection, the integration of circuits and sensors, and a portable power supply, clothes become a novel electronic device. Currently, the information display is the most intuitive interface using visualized communication methods and the simultaneous concurrent processing of inputs and outputs between a wearer and functional clothes. The important aspect in this case is to maintain the characteristic softness of the fabrics even when electronic devices are added to the flexible clothes. Silicone-based light-emitting diode (LED) jackets, shirts, and stage costumes have started to appear, but the intrinsic stiffness of inorganic semiconductors causes wearers to feel discomfort; thus, it is difficult to use such devices for everyday purposes. To address this problem, a method of fabricating a thin and flexible emitting fabric utilizing organic light-emitting diodes (OLEDs) was developed in this work. Its flexibility was evaluated, and an analysis of its mechanical bending characteristics and tests of its long-term reliability were carried out.

Light-emitting diodes based on colloidal silicon quantum dots

NASA Astrophysics Data System (ADS)

Zhao, Shuangyi; Liu, Xiangkai; Pi, Xiaodong; Yang, Deren

2018-06-01

Colloidal silicon quantum dots (Si QDs) hold great promise for the development of printed Si electronics. Given their novel electronic and optical properties, colloidal Si QDs have been intensively investigated for optoelectronic applications. Among all kinds of optoelectronic devices based on colloidal Si QDs, QD light-emitting diodes (LEDs) play an important role. It is encouraging that the performance of LEDs based on colloidal Si QDs has been significantly increasing in the past decade. In this review, we discuss the effects of the QD size, QD surface and device structure on the performance of colloidal Si-QD LEDs. The outlook on the further optimization of the device performance is presented at the end.

Remanagement of Singlet and Triplet Excitons in Single-Emissive-Layer Hybrid White Organic Light-Emitting Devices Using Thermally Activated Delayed Fluorescent Blue Exciplex.

PubMed

Liu, Xiao-Ke; Chen, Zhan; Qing, Jian; Zhang, Wen-Jun; Wu, Bo; Tam, Hoi Lam; Zhu, Furong; Zhang, Xiao-Hong; Lee, Chun-Sing

2015-11-25

A high-performance hybrid white organic light-emitting device (WOLED) is demonstrated based on an efficient novel thermally activated delayed fluorescence (TADF) blue exciplex system. This device shows a low turn-on voltage of 2.5 V and maximum forward-viewing external quantum efficiency of 25.5%, which opens a new avenue for achieving high-performance hybrid WOLEDs with simple structures. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Triphenylvinyl anthracene based emitter for non-doped blue light emitting devices with unusual emission behavior

NASA Astrophysics Data System (ADS)

Islam, Amjad; Zhang, Dongdong; Usman, Khurram; Siddique, Ahmad Hassan; Wattoo, Abdul Ghafar; Khalid, Hamad; Ouyang, Xinhua; Duan, Lian; Ge, Ziyi

2018-05-01

A novel blue luminogen based on triphenylvinyl anthracene was synthesized. The photophysical, thermal and aggregation induced emission as well as electroluminescent properties were investigated. The luminogen demonstrated typical aggregation caused quenching (ACQ) effect. A non-doped organic light emitting device was fabricated and realized a current efficiency of 3.25 cd/A, an external quantum efficiency of 1.41%, power efficiency of 2.11 m/W and a maximum luminance of 11761.8 cd/m2 were achieved.

Fabrication and properties of light-emitting diodes based on self-assembled multilayers of poly(phenylene vinylene)

NASA Astrophysics Data System (ADS)

Fou, A. C.; Onitsuka, O.; Ferreira, M.; Rubner, M. F.; Hsieh, B. R.

1996-05-01

Light-emitting diodes have been fabricated from self-assembled multilayers of poly(p-phenylene vinylene) (PPV) and two different polyanions; polystyrene sulfonic acid (SPS) and polymethacrylic acid (PMA). The type of polyanion used to assemble the multilayer thin films was found to dramatically influence the behavior and performance of devices fabricated with indium tin oxide and aluminum electrodes. Light-emitting devices fabricated from PMA/PPV multilayers were found to exhibit luminance levels in the range of 20-60 cd/m2, a thickness dependent turn-on voltage and classical rectifying behavior with rectification ratios greater than 105. In sharp contrast, the devices based on SPS/PPV exhibited near symmetric current-voltage curves, thickness independent turn-on voltages and much lower luminance levels. The significant difference in device behavior observed between these two systems is primarily due to a doping effect induced either chemically or electrochemically by the sulfonic acid groups of SPS. It was also found that the performance of these devices depends on the type of layer that is in contact with the Al top electrode thereby making it possible to manipulate device efficiency at the molecular level.

High thermal stability fluorene-based hole-injecting material for organic light-emitting devices

NASA Astrophysics Data System (ADS)

Li, Lu; Jiao, Bo; Li, Sanfeng; Ma, Lin; Yu, Yue; Wu, Zhaoxin

2016-03-01

Novel N1,N3,N5-tris(9,9-diphenyl-9H-fluroen-2-yl)-N1,N3,N5-triphenylbenzene-1,3,5-triamine (TFADB) was synthesized and characterized as a hole-injecting material (HIM) for organic light-emitting devices (OLEDs). By incorporating fluorene group TFADB shows a high glass-transition temperature Tg > 168 °C, indicative of excellent thermal stability. TFADB-based devices exhibited the highest performance in terms of the maximum current efficiency (6.0 cd/A), maximum power efficiency (4.0 lm/W), which is improved than that of the standard device based on 4-4‧-4″Tris(N-(naphthalene-2-yl)-N-phenyl-amino)triphenylamine (2T-NATA) (5.2 cd/A, 3.6 lm/W). This material could be a promising hole-injecting material, especially for the high temperature applications of OLEDs and other organic electronic devices.

Efficient white-light-emitting diodes based on poly(N-vinylcarbazole) doped with blue fluorescent and orange phosphorescent materials

NASA Astrophysics Data System (ADS)

Shih, Ping-I.; Shu, Ching-Fong; Tung, Yung-Liang; Chi, Yun

2006-06-01

We have fabricated polymer white-light-emitting devices possessing a single emitting layer containing a hole-transporting host polymer, poly(N-vinylcarbazole), and an electron-transporting auxiliary, 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole, doped with a blue-light-emitting amino-substituted distyrylarylene fluorescent dye and an orange-light-emitting osmium phosphor. The doubly doped device exhibited an intense white emission having Commission Internationale de l'Eclairage coordinates of (0.33, 0.34), a high external quantum efficiency of 6.12% (13.2cd/A), and a maximum brightness of 11306cd/m2. The color coordinates remained unchanged over a range of operating voltages, even at luminance as high as 1×104cd/m2.

Electroluminescent devices formed using semiconductor nanocrystals as an electron transport media and method of making such electroluminescent devices

DOEpatents

Alivisatos, A. Paul; Colvin, Vickie

1996-01-01

An electroluminescent device is described, as well as a method of making same, wherein the device is characterized by a semiconductor nanocrystal electron transport layer capable of emitting visible light in response to a voltage applied to the device. The wavelength of the light emitted by the device may be changed by changing either the size or the type of semiconductor nanocrystals used in forming the electron transport layer. In a preferred embodiment the device is further characterized by the capability of emitting visible light of varying wavelengths in response to changes in the voltage applied to the device. The device comprises a hole processing structure capable of injecting and transporting holes, and usually comprising a hole injecting layer and a hole transporting layer; an electron transport layer in contact with the hole processing structure and comprising one or more layers of semiconductor nanocrystals; and an electron injecting layer in contact with the electron transport layer for injecting electrons into the electron transport layer. The capability of emitting visible light of various wavelengths is principally based on the variations in voltage applied thereto, but the type of semiconductor nanocrystals used and the size of the semiconductor nanocrystals in the layers of semiconductor nanometer crystals may also play a role in color change, in combination with the change in voltage.

Novel hole transport materials for organic light emitting devices

NASA Astrophysics Data System (ADS)

Shi, Jianmin; Forsythe, Eric; Morton, David

2008-08-01

Organic electronic devices generally have a layered structure with organic materials sandwiched between an anode and a cathode, such organic electronic devices of organic light-emitting diode (OLED), organic photovoltaic (OPV), organic thin-film transistor (OTFT). There are many advantages of these organic electronic devices as compared to silicon-based devices. However, one of key challenge for an organic electronic device is to minimize the charge injection barrier from electrodes to organic materials and improve the charge transport mobility. In order to overcome these circumstances, there are many approaches including, designing organic materials with minimum energy barriers and improving charge transport mobility. Ideally organic materials or complex with Ohmic contact will be the most desired.

Fused thiophene-based conjugated polymers and their use in optoelectronic devices

DOEpatents

Facchetti, Antonio; Marks, Tobin J; Takai, Atsuro; Seger, Mark; Chen, Zhihua

2015-11-03

The present teachings relate to certain polymeric compounds and their use as organic semiconductors in organic and hybrid optical, optoelectronic, and/or electronic devices such as photovoltaic cells, light emitting diodes, light emitting transistors, and field effect transistors. The disclosed compounds can provide improved device performance, for example, as measured by power conversion efficiency, fill factor, open circuit voltage, field-effect mobility, on/off current ratios, and/or air stability when used in photovoltaic cells or transistors. The disclosed compounds can have good solubility in common solvents enabling device fabrication via solution processes.

Light-emitting device with organic electroluminescent material and photoluminescent materials

DOEpatents

McNulty, Thomas Francis; Duggal, Anil Raj; Turner, Larry Gene; Shiang, Joseph John

2005-06-07

A light-emitting device comprises a light-emitting member, which comprises two electrodes and an organic electroluminescent material disposed between the electrodes, and at least one organic photoluminescent ("PL") material. The light-emitting member emits light having a first spectrum in response to a voltage applied across the two electrodes. The organic PL material absorbs a portion of the light emitted by the light-emitting member and emits light having second spectrum different than the first spectrum. The light-emitting device can include an inorganic PL material that absorbs another portion of the light emitted from the light-emitting member and emits light having a third spectrum different than both the first and the second spectra.

Efficient red organic electroluminescent devices by doping platinum(II) Schiff base emitter into two host materials with stepwise energy levels.

PubMed

Zhou, Liang; Kwok, Chi-Chung; Cheng, Gang; Zhang, Hongjie; Che, Chi-Ming

2013-07-15

In this work, organic electroluminescent (EL) devices with double light-emitting layers (EMLs) having stepwise energy levels were designed to improve the EL performance of a red-light-emitting platinum(II) Schiff base complex. A series of devices with single or double EML(s) were fabricated and characterized. Compared with single-EML devices, double-EML devices showed improved EL efficiency and brightness, attributed to better balance in carriers. In addition, the stepwise distribution in energy levels of host materials is instrumental in broadening the recombination zone, thus delaying the roll-off of EL efficiency. The highest EL current efficiency and power efficiency of 17.36 cd/A and 14.73 lm/W, respectively, were achieved with the optimized double-EML devices. At high brightness of 1000 cd/m², EL efficiency as high as 8.89 cd/A was retained.

Intrinsic Polarization and Tunable Color of Electroluminescence from Organic Single Crystal-based Light-Emitting Devices

PubMed Central

Ding, Ran; Feng, Jing; Zhou, Wei; Zhang, Xu-Lin; Fang, Hong-Hua; Yang, Tong; Wang, Hai-Yu; Hotta, Shu; Sun, Hong-Bo

2015-01-01

A single crystal-based organic light-emitting device (OLED) with intrinsically polarized and color-tunable electroluminescence (EL) has been demonstrated without any subsequent treatment. The polarization ratio of 5:1 for the transversal-electric (TE) and transversal-magnetic (TM) polarization at the emission peak of 575 nm, and 4.7:1 for the TM to TE polarization at the emission peak of 635 nm, respectively, have been obtained. The emitting color is tunable between yellow, yellow-green and orange by changing the polarization angle. The polarized EL and the polarization-induced color tunability can be attributed to the anisotropic microcavity formed by the BP3T crystal with uniaxial alignment of the molecules. PMID:26207723

Selective epitaxial growth of monolithically integrated GaN-based light emitting diodes with AlGaN/GaN driving transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Zhaojun; Ma, Jun; Huang, Tongde

2014-03-03

In this Letter, we report selective epitaxial growth of monolithically integrated GaN-based light emitting diodes (LEDs) with AlGaN/GaN high-electron-mobility transistor (HEMT) drivers. A comparison of two integration schemes, selective epitaxial removal (SER), and selective epitaxial growth (SEG) was made. We found the SER resulted in serious degradation of the underlying LEDs in a HEMT-on-LED structure due to damage of the p-GaN surface. The problem was circumvented using the SEG that avoided plasma etching and minimized device degradation. The integrated HEMT-LEDs by SEG exhibited comparable characteristics as unintegrated devices and emitted modulated blue light by gate biasing.

Degradation of HTL layers during device operation in PhOLEDs

NASA Astrophysics Data System (ADS)

Sivasubramaniam, Varatharajan; Brodkorb, Florian; Hanning, Stephanie; Buttler, Oliver; Loebl, Hans Peter; van Elsbergen, Volker; Boerner, Herbert; Scherf, Ullrich; Kreyenschmidt, Martin

2009-11-01

Different analytical tools and methodologies are currently employed to determine degradation products of organic blue light emitting devices in order to identify the failure mechanisms which determine the lifetime of these devices. This article provides a deeper understanding of degradation mechanisms of organic light emitting diodes (OLEDs) during device operation. Degradation products of blue emitting devices containing 8% of the phosphorescent emitter iridium(III)bis(4,6-difluorophenyl)-pyridinato-N,C 2' picolinate (FIrpic) in a matrix containing bis(2-methyl-8-quinolinolato)(4-phenylphenolato)aluminium (BAlq) as electron transport layer (ETL), 4,4',4″-tri( N-carbazolyl)triphenylamine (TCTA) and N, N'-diphenyl- N, N'-bis(1-naphthyl)-1,1'-biphenyl-4,4″-diamine (α-NPD) were investigated using laser desorption ionization (LDI) coupled with a time of flight mass spectrometry (TOF/MS). Especially chemical degradation pathways of the hole transport materials TCTA and α-NPD were investigated. The comparison of experimental data of unstressed and stressed device revealed that new reaction products are formed during the device operation. The linkage of TCTA fragments to the α-NPD core in an interfacial reaction as well as a dimerization of TCTA itself was observed. Ten new reaction products could be characterized via LDI-TOF-MS. Some of these compounds might possess a negative influence on the drop of efficiency and lifetime of blue light emitting devices based on FIrpic.

Research progress of infrared detecting and display integrated device based on infrared-visible up-conversion technology

NASA Astrophysics Data System (ADS)

Xu, Junfeng; Li, Weile; He, Bo; Wang, Haowei; Song, Yong; Yang, Shengyi; Ni, Guoqiang

2018-01-01

Infrared detecting and display device (IR-DDD) is a newly developed optical up-conversion device that integrates the light-emitting diode (LED) onto the infrared (IR) photo-detector, in order to convert IR light into the carriers photo-generated in detection materials and inject them into LED to emit visible light. This IR-DDD can achieve the direct up-conversion from IR ray to visible light, showing the considerable potential in night-vision application. This paper attempts a review of its working principle and current research progresses.

Remote Steric Effect as a Facile Strategy for Improving the Efficiency of Exciplex-Based OLEDs.

PubMed

Hung, Wen-Yi; Wang, Ting-Chih; Chiang, Pin-Yi; Peng, Bo-Ji; Wong, Ken-Tsung

2017-03-01

This work reports a new strategy of introducing remote steric effect onto the electron donor for giving the better performance of the exciplex-based organic light-emitting device (OLED). The bulky triphenylsilyl group (SiPh 3 ) was introduced onto the fluorene bridge of 4,4'-(9H-fluorene-9,9-diyl)bis(N,N-di-p-tolylaniline) (DTAF) to create remote steric interactions for increasing the possibility of effective contacts between electron-donating chromophores and acceptor molecules, rendering the resulting exciplex to have a higher photoluminescence quantum yield (PLQY). The green exciplex device based on DSDTAF:3N-T2T (1:1) as an emitting layer exhibits a low turn-on voltage of 2.0 V, high maximum efficiencies (13.2%, 42.9 cd A -1 , 45.5 lm W -1 ), which are higher than the device employed DTAF (without SiPh 3 groups) (11.6%, 35.3 cd A -1 , 41.3 lm W -1 ) as donor under the same device structure. This strategy was further examined for blue exciplex, where the EQE was enhanced from 9.5% to 12.5% as the electron acceptor PO-T2T mixed with a tert-butyl group substituted carbazole-based donor (CPTBF) as the emitting exciplex in device. This strategy is simple and useful for developing high performance exciplex OLEDs.

[1,2,4]Triazolo[1,5-a]pyridine as Building Blocks for Universal Host Materials for High-Performance Red, Green, Blue and White Phosphorescent Organic Light-Emitting Devices.

PubMed

Song, Wenxuan; Shi, Lijiang; Gao, Lei; Hu, Peijun; Mu, Haichuan; Xia, Zhenyuan; Huang, Jinhai; Su, Jianhua

2018-02-14

The electron-accepting [1,2,4]triazolo[1,5-a]pyridine (TP) moiety was introduced to build bipolar host materials for the first time, and two host materials based on this TP acceptor and carbazole donor, namely, 9,9'-(2-([1,2,4]triazolo[1,5-a]pyridin-2-yl)-1,3-phenylene)bis(9H-carbazole) (o-CzTP) and 9,9'-(5-([1,2,4]triazolo[1,5-a]pyridin-2-yl)-1,3-phenylene)bis(9H-carbazole) (m-CzTP), were designed and synthesized. These two TP-based host materials possess a high triplet energy (>2.9 eV) and appropriate highest occupied molecular orbital/lowest unoccupied molecular orbital levels as well as the bipolar transporting feature, which permits their applicability as universal host materials in multicolor phosphorescent organic light-emitting devices (PhOLEDs). Blue, green, and red PhOLEDs based on o-CzTP and m-CzTP with the same device configuration all show high efficiencies and low efficiency roll-off. The devices hosted by o-CzTP exhibit maximum external quantum efficiencies (η ext ) of 27.1, 25.0, and 15.8% for blue, green, and red light emitting, respectively, which are comparable with the best electroluminescene performance reported for FIrpic-based blue, Ir(ppy) 3 -based green, and Ir(pq) 2 (acac)-based red PhOLEDs equipped with a single-component host. The white PhOLEDs based on the o-CzTP host and three lumophors containing red, green, and blue emitting layers were fabricated with the same device structure, which exhibit a maximum current efficiency and η c of 40.4 cd/A and 17.8%, respectively, with the color rendering index value of 75.

Lighted display devices for producing static or animated visual displays, including animated facial features

DOE Office of Scientific and Technical Information (OSTI.GOV)

Heilbron, Valerie J; Clem, Paul G; Cook, Adam Wade

An illuminated display device with a base member with a plurality of cavities therein. Illumination devices illuminate the cavities and emit light through an opening of the cavities in a pattern, and a speaker can emit sounds in synchronization with the pattern. A panel with translucent portions can overly the base member and the cavities. An animated talking character can have an animated mouth cavity complex with multiple predetermined mouth lighting configurations simulative of human utterances. The cavities can be open, or optical waveguide material or positive members can be disposed therein. Reflective material can enhance internal reflectance and lightmore » emission.« less

Laterally injected light-emitting diode and laser diode

DOEpatents

Miller, Mary A.; Crawford, Mary H.; Allerman, Andrew A.

2015-06-16

A p-type superlattice is used to laterally inject holes into an III-nitride multiple quantum well active layer, enabling efficient light extraction from the active area. Laterally-injected light-emitting diodes and laser diodes can enable brighter, more efficient devices that impact a wide range of wavelengths and applications. For UV wavelengths, applications include fluorescence-based biological sensing, epoxy curing, and water purification. For visible devices, applications include solid state lighting and projection systems.

Organic light emitting devices for illumination

DOEpatents

Hack, Michael; Lu, Min-Hao Michael; Weaver, Michael S.

2010-02-16

An organic light emitting device is provided. The device has a plurality of regions, each region having an organic emissive layer adapted to emit a different spectrum of light. The regions in combination emit light suitable for illumination purposes. The area of each region may be selected such that the device is more efficient that an otherwise equivalent device having regions of equal size. The regions may have an aspect ratio of at least about four. All parts of any given region may be driven at the same current.

Perovskite Materials for Light-Emitting Diodes and Lasers.

PubMed

Veldhuis, Sjoerd A; Boix, Pablo P; Yantara, Natalia; Li, Mingjie; Sum, Tze Chien; Mathews, Nripan; Mhaisalkar, Subodh G

2016-08-01

Organic-inorganic hybrid perovskites have cemented their position as an exceptional class of optoelectronic materials thanks to record photovoltaic efficiencies of 22.1%, as well as promising demonstrations of light-emitting diodes, lasers, and light-emitting transistors. Perovskite materials with photoluminescence quantum yields close to 100% and perovskite light-emitting diodes with external quantum efficiencies of 8% and current efficiencies of 43 cd A(-1) have been achieved. Although perovskite light-emitting devices are yet to become industrially relevant, in merely two years these devices have achieved the brightness and efficiencies that organic light-emitting diodes accomplished in two decades. Further advances will rely decisively on the multitude of compositional, structural variants that enable the formation of lower-dimensionality layered and three-dimensional perovskites, nanostructures, charge-transport materials, and device processing with architectural innovations. Here, the rapid advancements in perovskite light-emitting devices and lasers are reviewed. The key challenges in materials development, device fabrication, operational stability are addressed, and an outlook is presented that will address market viability of perovskite light-emitting devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Environmental barrier material for organic light emitting device and method of making

DOEpatents

Graff, Gordon L [West Richland, WA; Gross, Mark E [Pasco, WA; Affinito, John D [Kennewick, WA; Shi, Ming-Kun [Richland, WA; Hall, Michael [West Richland, WA; Mast, Eric [Richland, WA

2003-02-18

An encapsulated organic light emitting device. The device includes a first barrier stack comprising at least one first barrier layer and at least one first polymer layer. There is an organic light emitting layer stack adjacent to the first barrier stack. A second barrier stack is adjacent to the organic light emitting layer stack. The second barrier stack has at least one second barrier layer and at least one second polymer layer. A method of making the encapsulated organic light emitting device is also provided.

Organic electrophosphorescence device having interfacial layers

DOEpatents

Choulis, Stelios A.; Mathai, Mathew; Choong, Vi-En; So, Franky

2010-08-10

Techniques are described for forming an organic light emitting diode device with improved device efficiency. Materials having at least one energy level that is similar to those of a phosphorescent light emitting material in the diode are incorporated into the device to directly inject holes or electrons to the light emitting material.

X-ray compass for determining device orientation

DOEpatents

Da Silva, Luiz B.; Matthews, Dennis L.; Fitch, Joseph P.; Everett, Matthew J.; Colston, Billy W.; Stone, Gary F.

1999-01-01

An apparatus and method for determining the orientation of a device with respect to an x-ray source. In one embodiment, the present invention is coupled to a medical device in order to determine the rotational orientation of the medical device with respect to the x-ray source. In such an embodiment, the present invention is comprised of a scintillator portion which is adapted to emit photons upon the absorption of x-rays emitted from the x-ray source. An x-ray blocking portion is coupled to the scintillator portion. The x-ray blocking portion is disposed so as to vary the quantity of x-rays which penetrate the scintillator portion based upon the particular rotational orientation of the medical device with respect to the x-ray source. A photon transport mechanism is also coupled to the scintillator portion. The photon transport mechanism is adapted to pass the photons emitted from the scintillator portion to an electronics portion. By analyzing the quantity of the photons, the electronics portion determines the rotational orientation of the medical device with respect to the x-ray source.

X-ray compass for determining device orientation

DOEpatents

Da Silva, L.B.; Matthews, D.L.; Fitch, J.P.; Everett, M.J.; Colston, B.W.; Stone, G.F.

1999-06-15

An apparatus and method for determining the orientation of a device with respect to an x-ray source are disclosed. In one embodiment, the present invention is coupled to a medical device in order to determine the rotational orientation of the medical device with respect to the x-ray source. In such an embodiment, the present invention is comprised of a scintillator portion which is adapted to emit photons upon the absorption of x-rays emitted from the x-ray source. An x-ray blocking portion is coupled to the scintillator portion. The x-ray blocking portion is disposed so as to vary the quantity of x-rays which penetrate the scintillator portion based upon the particular rotational orientation of the medical device with respect to the x-ray source. A photon transport mechanism is also coupled to the scintillator portion. The photon transport mechanism is adapted to pass the photons emitted from the scintillator portion to an electronics portion. By analyzing the quantity of the photons, the electronics portion determines the rotational orientation of the medical device with respect to the x-ray source. 25 figs.

Organic light emitting devices for illumination

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hack, Michael; Lu, Min-Hao Michael; Weaver, Michael S

An organic light emitting device an a method of obtaining illumination from such a device is provided. The device has a plurality of regions, each region having an organic emissive layer adapted to emit a different spectrum of light. The regions in combination emit light suitable for illumination purposes. The area of each region may be selected such that the device is more efficient than an otherwise equivalent device having regions of equal size. The regions may have an aspect ratio of at least about four. All parts of any given region may be driven at the same current.

Defect evolution during catastrophic optical damage in 450-nm emitting InGaN/GaN diode lasers

NASA Astrophysics Data System (ADS)

Tomm, Jens W.; Kernke, Robert; Löffler, Andreas; Stojetz, Bernhard; Lell, Alfred; König, Harald

2018-02-01

The catastrophic optical damage (COD) of 450-nm emitting InGaN/GaN diode lasers is investigated with special attention to the kinetics of the process. For this purpose, the COD is triggered artificially by applying individual current pulses. This makes it possible to achieve a sub-µs time resolution for processes monitored by cameras. COD appears as a "hot" process that involves decomposition of quantum well and waveguide materials. We observe the ejection of hot material from the front facets of the laser. This can be seen in two different wavelength ranges, visible/near infrared and mid infrared. The main contributions identified are both thermal radiation and 450-nm laser light scattered by the emitted material. Defect growth during COD is energized by the optical mode. Therefore, the defect pattern resembles its shape. Ultimately, the loss of material leads to the formation of an empty channel along the laser axis. COD in GaAs and GaN-based devices follows similar general scenarios. After ignition of the process, the defect propagation during the process is fed by laser energy. We observe defect propagation velocities of up to 30 m/s for GaAs-based devices and 110 m/s for GaN-based devices. The damage patterns of GaN and GaAs-based devices are completely different. For GaN-based devices, the front facets show holes. Behind them in the interior, we find an empty channel at the position of the optical mode surrounded by intact material. In contrast, earlier studies on GaAs-based devices that were degraded under almost identical conditions resulted in molten, phase separated and both recrystallized and amorphous materials with well-defined melting fronts.

Experimental observation of polarized electroluminescence from edge-emission organic light emitting devices

NASA Astrophysics Data System (ADS)

Ran, G. Z.; Jiang, D. F.; Kan, Q.; Chen, H. D.

2010-12-01

We have observed a strongly polarized edge-emission from an organic light emitting device (OLED) with a silicon anode and a stacked Sm/Au (or Ag) cathode. For the OLED with a Sm/Au cathode, the transverse magnetic (TM) mode is stronger than the transverse electric (TE) mode by a factor of 2, while the polarization ratio of TM:TE is close to 300 for that with a Sm/Ag cathode. The polarization results from the scattering of surface plasmon polaritons at the device boundary. Such a silicon-based OLED is potentially an electrically excited SPP source in plasmonics.

Light collection optics for measuring flux and spectrum from light-emitting devices

DOEpatents

McCord, Mark A.; DiRegolo, Joseph A.; Gluszczak, Michael R.

2016-05-24

Systems and methods for accurately measuring the luminous flux and color (spectra) from light-emitting devices are disclosed. An integrating sphere may be utilized to directly receive a first portion of light emitted by a light-emitting device through an opening defined on the integrating sphere. A light collector may be utilized to collect a second portion of light emitted by the light-emitting device and direct the second portion of light into the integrating sphere through the opening defined on the integrating sphere. A spectrometer may be utilized to measure at least one property of the first portion and the second portion of light received by the integrating sphere.

Diffusion-Driven Charge Transport in Light Emitting Devices

PubMed Central

Oksanen, Jani; Suihkonen, Sami

2017-01-01

Almost all modern inorganic light-emitting diode (LED) designs are based on double heterojunctions (DHJs) whose structure and current injection principle have remained essentially unchanged for decades. Although highly efficient devices based on the DHJ design have been developed and commercialized for energy-efficient general lighting, the conventional DHJ design requires burying the active region (AR) inside a pn-junction. This has hindered the development of emitters utilizing nanostructured ARs located close to device surfaces such as nanowires or surface quantum wells. Modern DHJ III-N LEDs also exhibit resistive losses that arise from the DHJ device geometry. The recently introduced diffusion-driven charge transport (DDCT) emitter design offers a novel way to transport charge carriers to unconventionally placed ARs. In a DDCT device, the AR is located apart from the pn-junction and the charge carriers are injected into the AR by bipolar diffusion. This device design allows the integration of surface ARs to semiconductor LEDs and offers a promising method to reduce resistive losses in high power devices. In this work, we present a review of the recent progress in gallium nitride (GaN) based DDCT devices, and an outlook of potential DDCT has for opto- and microelectronics. PMID:29231900

Oxadiazole-carbazole polymer (POC)-Ir(ppy)3 tunable emitting composites

NASA Astrophysics Data System (ADS)

Bruno, Annalisa; Borriello, Carmela; Di Luccio, Tiziana; Sessa, Lucia; Concilio, Simona; Haque, Saif A.; Minarini, Carla

2017-04-01

POC polymer is an oxadiazole-carbazole copolymer we have previously synthetized and established as light emitting material in Organic Light Emitting Devices (OLEDs), although POC quantum yield emission efficiency and color purity still need to be enhanced. On the other hand, tris[2-phenylpyridinato-C2,N]iridium(III) (Ir(ppy)3) complexes, namely Ir(ppy)3 are among the brightest luminophores employed in green light emitting devices. Our aim, in this work, is to take advantage of Ir(ppy)3 bright emission by combining the Ir complex with blue emitting POC to obtain tunable light emitting composites over a wide range of the visible spectrum. Here we have investigated the optical proprieties POC based nanocomposites with different concentrations of Ir(ppy)3, ranging from 1 to 10 wt%. Both spectral and time resolved fluorescence measurements show an efficient energy transfer from the polymer to the dopants, resulting in white-emitting composites. The most intense and stable emission has been found when POC was doped with about 5 wt% concentration of Ir(ppy)3.

Implementation of light extraction improvements of GaN-based light-emitting diodes with specific textured sidewalls

NASA Astrophysics Data System (ADS)

Chen, Chun-Yen; Chen, Wei-Cheng; Chang, Ching-Hong; Lee, Yu-Lin; Liu, Wen-Chau

2018-05-01

Textured-sidewall GaN-based light-emitting diodes (LEDs) with various sidewall angles (15-90°) and convex or concave sidewalls prepared using an inductively-coupled-plasma approach are comprehensively fabricated and studied. The device with 45° sidewalls (Device F) and that with convex sidewalls (Device B) show significant improvements in optical properties. Experiments show that, at an injection current of 350 mA, the light output power, external quantum efficiency, wall-plug efficiency, and luminous flux of Device F (Device B) are greatly improved by 18.3% (18.2%), 18.2% (18.2%), 17.3% (19.8%), and 16.6% (18.4%), respectively, compared to those of a conventional LED with flat sidewalls. In addition, negligible degradation in electrical properties is found. The enhanced optical performance is mainly attributed to increased light extraction in the horizontal direction due to a significant reduction in total internal reflection at the textured sidewalls. Therefore, the reported specific textured-sidewall structures (Devices B and F) are promising for high-power GaN-based LED applications.

Improving the light-emitting properties of single-layered polyfluorene light-emitting devices by simple ionic liquid blending

NASA Astrophysics Data System (ADS)

Horike, Shohei; Nagaki, Hiroto; Misaki, Masahiro; Koshiba, Yasuko; Morimoto, Masahiro; Fukushima, Tatsuya; Ishida, Kenji

2018-03-01

This paper describes an evaluation of ionic liquids (ILs) as potential electrolytes for single-layered light-emitting devices with good emission performance. As optoelectronic devices continue to grow in abundance, high-performance light-emitting devices with a single emission layer are becoming increasingly important for low-cost production. We show that a simple technique of osmosing IL into the polymer layer can result in high luminous efficiency and good response times of single-layered light-emitting polymers, even without the additional stacking of charge carrier injection and transport layers. The IL contributions to the light-emission of the polymer are discussed from the perspectives of energy diagrams and of the electric double layers on the electrodes. Our findings enable a faster, cheaper, and lower-in-waste production of light-emitting devices.

Ex post manipulation of barriers in InGaAs tunnel injection devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Talalaev, Vadim G.; Fock Institute of Physics, St. Petersburg State University, St. Petersburg 198504; Cirlin, George E.

Ex post manipulation of ∼1.1 μm emitting InGaAs/GaAs-based quantum dot–quantum well tunnel injection light emitting devices is demonstrated experimentally. The devices were operated at elevated forward currents until irreversible alterations were observed. As a result, changes in the steady-state optical spectra (electroluminescence, photoluminescence, and photocurrent), in carrier kinetics, in transport properties, and real structure are found. Except for degradation effects, e.g., of larger quantum dots, also restoration/annealing effects such as increased tunnel barriers are observed. The results furnish evidence for a generic degradation mode of nanostructures. We qualitatively interpret the mechanisms involved on both the nanoscopic and the device scales.

Effect of Dopant Activation on Device Characteristics of InGaN-based Light Emitting Diodes

NASA Astrophysics Data System (ADS)

Lacroce, Nicholas; Liu, Guangyu; Tan, Chee-Keong; Arif, Ronald A.; Lee, Soo Min; Tansu, Nelson

2015-03-01

Achieving high uniformity in growths and device characteristics of InGaN-based light-emitting diodes (LEDs) is important for large scale manufacturing. Dopant activation and maintaining control of variables affecting dopant activation are critical steps in the InGaN-based light emitting diodes (LEDs) fabrication process. In the epitaxy of large scale production LEDs, in-situ post-growth annealing is used for activating the Mg acceptor dopant in the p-AlGaN and p-GaN of the LEDs. However, the annealing temperature varies with respect to position in the reactor chamber, leading to severe uniform dopant activation issue across the devices. Thus, it is important to understand how the temperature gradient and the resulting variance in Mg acceptor activation will alter the device properties. In this work, we examine the effect of varying p-type doping levels in the p-GaN layers and AlGaN electron blocking layer of the GaN LEDs on the optoelectronic properties including the band profile, carrier concentration, current density, output power and quantum efficiency. By understanding the variations and its effect, the identification of the most critical p-type doping layer strategies to address this variation will be clarified.

Unitary lens semiconductor device

DOEpatents

Lear, Kevin L.

1997-01-01

A unitary lens semiconductor device and method. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors.

Highly efficient green phosphorescent organic light emitting diodes with improved efficiency roll-off

NASA Astrophysics Data System (ADS)

Thangaraju, K.; Lee, Jonghee; Lee, Jeong-Ik; Chu, Hye Yong; Kim, Yun-Hi; Kwon, Soon-Ki

2015-06-01

A 10-nm thick 4,4',4″-tris(carbazole-9-yl)tri-phenylamine (TcTa) interlayer effectively confines triplet excitons within the emissive layer (EML) of phosphorescent organic light emitting diodes (PHOLEDs) based on green-emitting Ir(ppy)3 dopant and improves the charge balance in the EML of the device, resulting the higher device efficiencies of 61.7 cd/A, 19.7 %, and 43.2 lm/W with the maximum luminance of 75,310 cd/m2 and highly improved efficiency roll-off (22.2% at 20 mA/cm2) when compared to those (61.1 cd/A, 19.6 %, and 47.2 lm/W with a maximum luminance of 38,350 cd/m2) of the standard device with efficiency roll-off of 62.3 % at 20 mA/cm2.

Preparation and properties of CVD-graphene/AgNWs hybrid transparent electrodes for the application of flexible optoelectronic devices

NASA Astrophysics Data System (ADS)

Wang, Xue-yan; Bao, Jun; Li, Lu; Cui, Shao-li; Du, Xiao-qing

2017-10-01

The flexible electrodes based on CVD-graphene/ AgNWs hybrid transparent films were prepared by the vacuum filtration and substrate transferring method, and several performances of the films including sheet resistance, optical transmittance, work function, surface roughness and flexibility were further researched. The results suggested that the hybrid films which were obtained by vacuum filtration and substrate transferring method have the advantages such as uniform distribution of AgNWs, high work function, low roughness and small sheet resistance and good flexibility. The sheet resistance of the hybrid films would decrease with the increasing of the concentration of AgNWs, while the surface roughness would increase and the optical transmittance at 550nm of the films decrease linearly. Organic light emitting devices (OLED) devices based on CVD-graphene/AgNWs hybrid films were fabricated, and characteristics of voltage-current density, luminance, current efficiency were tested. It's found that CVD-graphene/AgNWs hybrid films were better than CVD-graphene films when they were used as anodes for organic light emitting devices. It can be seen that CVD-graphene/AgNWs hybrid transparent films have great potential in applications of flexible electrodes, and are of great significance for promoting the development of organic light emitting devices.

Novel hybrid light-emitting devices based on MAPbBr3 nanoplatelets:PVK nanocomposites and zinc oxide nanorod arrays

NASA Astrophysics Data System (ADS)

Wang, Szu-Ping; Chang, Chun-Kai; Yang, Sheng-Hsiung; Chang, Che-Yu; Chao, Yu-Chiang

2018-01-01

In this research, we demonstrate inverted perovskite light-emitting devices (PeLEDs) based on zinc oxide nanorod arrays (ZnO NAs) as the electron transport layer and methylammonium lead bromide nanoplatelets (MAPbBr3 NPLs) as the emissive material for the first time. The polyethyleneimine ethoxylated (PEIE) was inserted between the ZnO NAs and the MAPbBr3 NPLs layer to reduce the energy barrier and improve the electron injection efficiency. Besides, different weight ratios of poly(N-vinylcarbazole) (PVK) were blended with MAPbBr3 NPLs to make evenly dispersed nanocomposite films, thereby enhancing the performance of devices. Meanwhile, the photoluminescence of MAPbBr3 NPLs:PVK nanocomposite film was increased due to reduced self-quenching and prolonged carrier lifetime. Inverted PeLEDs with the configuration of ITO/PEIE-modified ZnO NAs/MAPbBr3 NPLs:PVK/TFB/Au were fabricated and evaluated, using TFB as the hole transport layer. The current density of the devices containing PVK matrix was significantly suppressed compared to those without PVK. Herein, the best device revealed a max brightness of 495 cd m-2 and a low turn-on voltage of 3.1 V that shows potential use in light-emitting applications.

Interfacial Energy-Level Alignment for High-Performance All-Inorganic Perovskite CsPbBr3 Quantum Dot-Based Inverted Light-Emitting Diodes.

PubMed

Subramanian, Alagesan; Pan, Zhenghui; Zhang, Zhenbo; Ahmad, Imtiaz; Chen, Jing; Liu, Meinan; Cheng, Shuang; Xu, Yijun; Wu, Jun; Lei, Wei; Khan, Qasim; Zhang, Yuegang

2018-04-18

All-inorganic perovskite light-emitting diode (PeLED) has a high stability in ambient atmosphere, but it is a big challenge to achieve high performance of the device. Basically, device design, control of energy-level alignment, and reducing the energy barrier between adjacent layers in the architecture of PeLED are important factors to achieve high efficiency. In this study, we report a CsPbBr 3 -based PeLED with an inverted architecture using lithium-doped TiO 2 nanoparticles as the electron transport layer (ETL). The optimal lithium doping balances the charge carrier injection between the hole transport layer and ETL, leading to superior device performance. The device exhibits a current efficiency of 3 cd A -1 , a luminance efficiency of 2210 cd m -2 , and a low turn-on voltage of 2.3 V. The turn-on voltage is one of the lowest values among reported CsPbBr 3 -based PeLEDs. A 7-fold increase in device efficiencies has been obtained for lithium-doped TiO 2 compared to that for undoped TiO 2 -based devices.

Study of different roles phosphorescent material played in different positions of organic light emitting diodes

NASA Astrophysics Data System (ADS)

Keke, Gu; Jian, Zhong; Jiule, Chen; Yucheng, Chen; Ming, Deng

2013-09-01

Phosphorescent materials are crucial to improve the luminescence and efficiency of organic light emitting diodes (OLED), because its internal quantum efficiency can reach 100%. So the studying of optical and electrical properties of phosphorescent materials is propitious for the further development of phosphorescent OLED. Phosphorescent materials were generally doped into different host materials as emitting components, not only played an important role in emitting light but also had a profound influence on carrier transport properties. We studied the optical and electrical properties of the blue 4,4'-bis(2,2-diphenylvinyl)-1,1'-biphenyl (DPVBi)-based devices, adding a common yellow phosphorescent material bis[2-(4- tert-butylphenyl)benzothiazolato- N,C2'] iridium(acetylacetonate) [( t-bt)2Ir(acac)] in different positions. The results showed ( t-bt)2Ir(acac) has remarkable hole-trapping ability. Especially the ultrathin structure device, compared to the device without ( t-bt)2Ir(acac), had increased the luminance by about 60%, and the efficiency by about 97%. Then introduced thin 4,4'-bis(carbazol-9-yl)biphenyl (CBP) host layer between DPVBi and ( t-bt)2Ir(acac), and got devices with stable white color.

Efficient Sky-Blue Perovskite Light-Emitting Devices Based on Ethylammonium Bromide Induced Layered Perovskites.

PubMed

Wang, Qi; Ren, Jie; Peng, Xue-Feng; Ji, Xia-Xia; Yang, Xiao-Hui

2017-09-06

Low-dimensional organometallic halide perovskites are actively studied for the light-emitting applications due to their properties such as solution processability, high luminescence quantum yield, large exciton binding energy, and tunable band gap. Introduction of large-group ammonium halides not only serves as a convenient and versatile method to obtain layered perovskites but also allows the exploitation of the energy-funneling process to achieve a high-efficiency light emission. Herein, we investigate the influence of the addition of ethylammonium bromide on the morphology, crystallite structure, and optical properties of the resultant perovskite materials and report that the phase transition from bulk to layered perovskite occurs in the presence of excess ethylammonium bromide. On the basis of this strategy, we report green perovskite light-emitting devices with the maximum external quantum efficiency of ca. 3% and power efficiency of 9.3 lm/W. Notably, blue layered perovskite light-emitting devices with the Commission Internationale de I'Eclairage coordinates of (0.16, 0.23) exhibit the maximum external quantum efficiency of 2.6% and power efficiency of 1 lm/W at 100 cd/m 2 , representing a large improvement over the previously reported analogous devices.

Enhanced Optical and Electrical Properties of Polymer-Assisted All-Inorganic Perovskites for Light-Emitting Diodes.

PubMed

Ling, Yichuan; Tian, Yu; Wang, Xi; Wang, Jamie C; Knox, Javon M; Perez-Orive, Fernando; Du, Yijun; Tan, Lei; Hanson, Kenneth; Ma, Biwu; Gao, Hanwei

2016-10-01

Highly bright light-emitting diodes based on solution-processed all-inorganic perovskite thin film are demonstrated. The cesium lead bromide (CsPbBr 3 ) created using a new poly(ethylene oxide)-additive spin-coating method exhibits photoluminescence quantum yield up to 60% and excellent uniformity of electrical current distribution. Using the smooth CsPbBr 3 films as emitting layers, green perovskite-based light-emitting diodes (PeLEDs) exhibit electroluminescent brightness and efficiency above 53 000 cd m -2 and 4%: a new benchmark of device performance for all-inorganic PeLEDs. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Unitary lens semiconductor device

DOEpatents

Lear, K.L.

1997-05-27

A unitary lens semiconductor device and method are disclosed. The unitary lens semiconductor device is provided with at least one semiconductor layer having a composition varying in the growth direction for unitarily forming one or more lenses in the semiconductor layer. Unitary lens semiconductor devices may be formed as light-processing devices such as microlenses, and as light-active devices such as light-emitting diodes, photodetectors, resonant-cavity light-emitting diodes, vertical-cavity surface-emitting lasers, and resonant cavity photodetectors. 9 figs.

Enhancement of efficiencies for tandem green phosphorescent organic light-emitting devices with a p-type charge generation layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yoo, Byung Soo; Jeon, Young Pyo; Lee, Dae Uk

2014-10-15

The operating voltage of the tandem green phosphorescent organic light-emitting device with a 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile layer was improved by 3% over that of the organic light-emitting device with a molybdenum trioxide layer. The maximum brightness of the tandem green phosphorescent organic light-emitting device at 21.9 V was 26,540 cd/m{sup 2}. The dominant peak of the electroluminescence spectra for the devices was related to the fac-tris(2-phenylpyridine) iridium emission. - Highlights: • Tandem OLEDs with CGL were fabricated to enhance their efficiency. • The operating voltage of the tandem OLED with a HAT-CN layer was improved by 3%. • The efficiency and brightnessmore » of the tandem OLED were 13.9 cd/A and 26,540 cd/m{sup 2}. • Efficiency of the OLED with a HAT-CN layer was lower than that with a MoO{sub 3} layer. - Abstract: Tandem green phosphorescent organic light-emitting devices with a 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile or a molybdenum trioxide charge generation layer were fabricated to enhance their efficiency. Current density–voltage curves showed that the operating voltage of the tandem green phosphorescent organic light-emitting device with a 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile layer was improved by 3% over that of the corresponding organic light-emitting device with a molybdenum trioxide layer. The efficiency and the brightness of the tandem green phosphorescent organic light-emitting device were 13.9 cd/A and 26,540 cd/m{sup 2}, respectively. The current efficiency of the tandem green phosphorescent organic light-emitting device with a 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile layer was lower by 1.1 times compared to that of the corresponding organic light-emitting device with molybdenum trioxide layer due to the decreased charge generation and transport in the 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile layer resulting from triplet–triplet exciton annihilation.« less

High efficiency light source using solid-state emitter and down-conversion material

DOEpatents

Narendran, Nadarajah; Gu, Yimin; Freyssinier, Jean Paul

2010-10-26

A light emitting apparatus includes a source of light for emitting light; a down conversion material receiving the emitted light, and converting the emitted light into transmitted light and backward transmitted light; and an optic device configured to receive the backward transmitted light and transfer the backward transmitted light outside of the optic device. The source of light is a semiconductor light emitting diode, a laser diode (LD), or a resonant cavity light emitting diode (RCLED). The down conversion material includes one of phosphor or other material for absorbing light in one spectral region and emitting light in another spectral region. The optic device, or lens, includes light transmissive material.

Fixed Junction Light Emitting Electrochemical Cells based on Polymerizable Ionic Liquids

NASA Astrophysics Data System (ADS)

Brown, Erin; Limanek, Austin; Bauman, James; Leger, Janelle

Organic photovoltaic (OPV) devices are of interest due to ease of fabrication, which increases their cost-effectiveness. OPV devices based on fixed-junction light emitting electrochemical cells (LECs) in particular have shown promising results. LECs are composed of a layer of polymer semiconductor blended with a salt sandwiched between two electrodes. As a forward bias is applied, the ions within the polymer separate, migrate to the electrodes, and enable electrochemical doping, thereby creating a p-n junction analog. In a fixed junction device, the ions are immobilized after the desired distribution has been established, allowing for operation under reverse bias conditions. Fixed junctions can be established using various techniques, including chemically by mixing polymerizable salts that will bond to the polymer under a forward bias. Previously we have demonstrated the use of the polymerizable ionic liquid allyltrioctylammonium allysulfonate (ATOAAS) as an effective means of creating a chemically fixed junction in an LEC. Here we present the application of this approach to the creation of photovoltaic devices. Devices demonstrate higher open circuit voltages, faster charging, and an overall improved device performance over previous chemically-fixed junction PV devices.

Prediction and design of efficient exciplex emitters for high-efficiency, thermally activated delayed-fluorescence organic light-emitting diodes.

PubMed

Liu, Xiao-Ke; Chen, Zhan; Zheng, Cai-Jun; Liu, Chuan-Lin; Lee, Chun-Sing; Li, Fan; Ou, Xue-Mei; Zhang, Xiao-Hong

2015-04-08

High-efficiency, thermally activated delayed-fluorescence organic light-emitting diodes based on exciplex emitters are demonstrated. The best device, based on a TAPC:DPTPCz emitter, shows a high external quantum efficiency of 15.4%. Strategies for predicting and designing efficient exciplex emitters are also provided. This approach allow prediction and design of efficient exciplex emitters for achieving high-efficiency organic light-emitting diodes, for future use in displays and lighting applications. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

78 FR 34664 - Prospective Grant of Start-up Exclusive Evaluation License: Portable Device and Method for...

Federal Register 2010, 2011, 2012, 2013, 2014

2013-06-10

... DEPARTMENT OF HEALTH AND HUMAN SERVICES National Institutes of Health Prospective Grant of Start-up Exclusive Evaluation License: Portable Device and Method for Detecting Hematomas AGENCY: National... device and method for detecting hematomas based on near infrared light emitted perpendicularly into a...

Organic light-emitting device with a phosphor-sensitized fluorescent emission layer

DOEpatents

Forrest, Stephen [Ann Arbor, MI; Kanno, Hiroshi [Osaka, JP

2009-08-25

The present invention relates to organic light emitting devices (OLEDs), and more specifically to OLEDS that emit light using a combination of fluorescent emitters and phosphorescent emitters. The emissive region of the devices of the present invention comprise at least one phosphor-sensitized layer which has a combined emission from a phosphorescent emitter and a fluorescent emitter. In preferred embodiments, the invention relates to white-emitting OLEDS (WOLEDs).

Green perovskite light emitting diodes based on the ITO/Al2O3/CsPbBr3 heterojunction structure

NASA Astrophysics Data System (ADS)

Zhuang, Shiwei; Ma, Xue; Hu, Daqiang; Dong, Xin; Zhang, Yuantao; Zhang, Baolin

2018-03-01

Perovskite light emitting diodes (PeLEDs) now emerge as a promising new optoelectronic application field for these amazing semiconductors. For the purpose of investigating the device structures and light emission mechanisms of PeLEDs, we have fabricated green PeLEDs based on the ITO/Al2O3/CsPbBr3 heterojunction structure. The emission layer inorganic perovskite CsPbBr3 film with small grain sizes (∼28.9 nm) was prepared using a two-step method. The device exhibits a typical rectification behavior with turn-on voltage of ∼6 V. The EL emission band is narrow with the FWHM of ∼25 nm. The peak EQE of the device was ∼0.09%. The working mechanism of the device is also discussed. The result of the present work provides a feasible innovation idea of PeLEDs fabrication and great potentials for the development of perovskite based LEDs.

[Study on the movement of the carrier recombination region in organic light-emitting diodes (OLEDs) based on DPVBi/Alq3].

PubMed

Yan, Guang; Zhao, Su-ling; Xu, Zheng; Zhang, Fu-jun; Kong, Chao; Liu, Xiao-dong; Gong, Wei; Gao, Li-yan

2011-07-01

Series of organic light emitting devices with basic structure of ITO/PCBM: PVK(x Wt%, approximately 40 nm)/DPVBi(30 nm)/Alq3 (30 nm)/Al were fabricated in order to investigate the carrier recombination region movement in these devices. The carrier injection-dependent, the carrier transport-dependent and the voltage-dependent carrier recombination region movements were investigated respectively by modifying cathode with lithium fluoride, by changing the doping concentration of PCBM and by changing the voltage on the devices. The physical mechanism behind the voltage-dependent carrier recombination region movement was discussed.

Improvement in the luminous efficiency of MEH-PPV based light emitting diodes using zinc oxide nanorods grown by the electrochemical deposition technique on ITO substrates

NASA Astrophysics Data System (ADS)

Gupta, Rohini B.; Kumar, Jitender; Madhwal, Devinder; Singh, Inderpreet; Kaur, I.; Bhardwaj, L. M.; Nagpal, S.; Bhatnagar, P. K.; Mathur, P. C.

2011-07-01

Zinc oxide (ZnO) nanorods grown by the electrochemical technique have been used to enhance the luminance of poly[2-methoxy-5-(2'-ethylhexoxy)-1,4-phenylenevinylene] (MEH-PPV)-based polymer light-emitting diodes. The luminance of the device with ZnO nanorods is found to increase by more than two times as compared with the device without ZnO nanorods. The diameter of the nanorods used in device fabrication was ~145 nm. The size of the nanorods was estimated from field emission scanning electron microscope images. Optical and structural characterizations of the nanorods were also performed by using absorption, photoluminescence and x-ray diffraction, confirming the formation of ZnO nanorods.

Ultrabright fluorescent OLEDS using triplet sinks

DOEpatents

Zhang, Yifan; Forrest, Stephen R; Thompson, Mark

2013-06-04

A first device is provided. The first device further comprises an organic light emitting device. The organic light emitting device further comprises an anode, a cathode, and an emissive layer disposed between the anode and the cathode. The emissive layer further comprises an organic host compound, an organic emitting compound capable of fluorescent emission at room temperature, and an organic dopant compound. The triplet energy of the dopant compound is lower than the triplet energy of the host compound. The dopant compound does not strongly absorb the fluorescent emission of the emitting compound.

High efficiency and brightness fluorescent organic light emitting diode by triplet-triplet fusion

DOEpatents

Forrest, Stephen; Zhang, Yifan

2015-02-10

A first device is provided. The first device further comprises an organic light emitting device. The organic light emitting device further comprises an anode, a cathode, and an emissive layer disposed between the anode and the cathode. The emissive layer may include an organic host compound and at least one organic emitting compound capable of fluorescent emission at room temperature. Various configurations are described for providing a range of current densities in which T-T fusion dominates over S-T annihilation, leading to very high efficiency fluorescent OLEDs.

Vertical-cavity surface-emitting lasers come of age

NASA Astrophysics Data System (ADS)

Morgan, Robert A.; Lehman, John A.; Hibbs-Brenner, Mary K.

1996-04-01

This manuscript reviews our efforts in demonstrating state-of-the-art planar, batch-fabricable, high-performance vertical-cavity surface-emitting lasers (VCSELs). All performance requirements for short-haul data communication applications are clearly established. We concentrate on the flexibility of the established proton-implanted AlGaAs-based (emitting near 850 nm) technology platform, focusing on a standard device design. This structure is shown to meet or exceed performance and producibility requirements. These include > 99% device yield across 3-in-dia. metal-organic vapor phase epitaxy (MOVPE)-grown wafers and wavelength operation across a > 100-nm range. Recent progress in device performance [low threshold voltage (Vth equals 1.53 V); threshold current (Ith equals 0.68 mA); continuous wave (CW) power (Pcw equals 59 mW); maximum and minimum CW lasing temperature (T equals 200 degree(s)C, 10 K); and wall-plug efficiencies ((eta) wp equals 28%)] should enable great advances in VCSEL-based technologies. We also discuss the viability of VCSELs in cryogenic and avionic/military environments. Also reviewed is a novel technique, modifying this established platform, to engineer low-threshold, high-speed, single- mode VCSELs.

High efficiency single Ag nanowire/p-GaN substrate Schottky junction-based ultraviolet light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Y.; Li, X.; Xu, P.

2015-02-02

We report a high efficiency single Ag nanowire (NW)/p-GaN substrate Schottky junction-based ultraviolet light emitting diode (UV-LED). The device demonstrates deep UV free exciton electroluminescence at 362.5 nm. The dominant emission, detectable at ultralow (<1 μA) forward current, does not exhibit any shifts when the forward current is increased. External quantum efficiency (EQE) as high as 0.9% is achieved at 25 μA current at room temperature. Experiments and simulation analysis show that devices fabricated with thinner Ag NWs have higher EQE. However, for very thin Ag NWs (diameter < 250 nm), this trend breaks down due to heat accumulation in the NWs. Our simple device architecturemore » offers a potentially cost-effective scheme to fabricate high efficiency Schottky junction-based UV-LEDs.« less

Enhanced light output from a nitride-based power chip of green light-emitting diodes with nano-rough surface using nanoimprint lithography.

PubMed

Huang, H W; Lin, C H; Yu, C C; Lee, B D; Chiu, C H; Lai, C F; Kuo, H C; Leung, K M; Lu, T C; Wang, S C

2008-05-07

Enhanced light extraction from a GaN-based power chip (PC) of green light-emitting diodes (LEDs) with a rough p-GaN surface using nanoimprint lithography is presented. At a driving current of 350 mA and with a chip size of 1 mm × 1 mm packaged on transistor outline (TO)-cans, the light output power of the green PC LEDs with nano-rough p-GaN surface is enhanced by 48% when compared with the same device without a rough p-GaN surface. In addition, by examining the radiation patterns, the green PC LED with nano-rough p-GaN surface shows stronger light extraction with a wider view angle. These results offer promising potential to enhance the light output powers of commercial light-emitting devices by using the technique of nanoimprint lithography under suitable nanopattern design.

White perovskite based lighting devices.

PubMed

Bidikoudi, M; Fresta, E; Costa, R D

2018-06-28

Hybrid organic-inorganic and all-inorganic metal halide perovskites have been one of the most intensively studied materials during the last few years. In particular, research focusing on understanding how to tune the photoluminescence features and to apply perovskites to optoelectronic applications has led to a myriad of new materials featuring high photoluminescence quantum yields covering the whole visible range, as well as devices with remarkable performances. Having already established their successful incorporation in highly efficient solar cells, the next step is to tackle the challenges in solid-state lighting (SSL) devices. Here, the most prominent is the preparation of white-emitting devices. Herein, we have provided a comprehensive view of the route towards perovskite white lighting devices, including thin film light-emitting diodes (PeLEDs) and hybrid LEDs (HLEDs), using perovskite based color down-converting coatings. While synthesis and photoluminescence features are briefly discussed, we focus on highlighting the major achievements and limitations in white devices. Overall, we expect that this review will provide the reader a general overview of the current state of perovskite white SSL, paving the way towards new breakthroughs in the near future.

High-efficiency non-blocking phosphorescent organic light emitting diode with ultrathin emission layer

NASA Astrophysics Data System (ADS)

Qiu, Jacky; Helander, Michael G.; Wang, Zhibin; Chang, Yi-Lu; Lu, ZhengHong

2012-09-01

Non-blocking Phosphorescent Organic Light Emitting Diode (NB-PHOLED) is a highly simplified device structure that has achieved record high device performance on chlorinated ITO[1], flexible substrates[2], also with Pt based phosphorescent dopants[3] and NB-PHOLED has significantly reduced efficiency roll-off[4]. The principle novel features of NB-PHOLED is the absence of blocking layer in the OLED stack, as well as the absence of organic hole injection layer, this allows for reduction of carrier accumulation in between organic layers and result in higher efficiencies.

Highly efficient organic light-emitting diodes with a quantum dot interfacial layer.

PubMed

Ryu, Seung Yoon; Hwang, Byoung Har; Park, Ki Wan; Hwang, Hyeon Seok; Sung, Jin Woo; Baik, Hong Koo; Lee, Chang Ho; Song, Seung Yong; Lee, Jun Yeob

2009-02-11

Advanced organic light-emitting diodes (OLEDs), based on a multiple structure, were achieved in combination with a quantum dot (QD) interfacial layer. The authors used core/shell CdSe/ZnS QDs passivated with trioctylphosphine oxide (TOPO) and TOPO-free QDs as interlayers. Multiple-structure OLEDs (MOLEDs) with TOPO-free QDs showed higher device efficiency because of a well-defined interfacial monolayer formation. Additionally, the three-unit MOLED showed high performance for device efficiency with double-structured QD interfacial layers due to the enhanced charge balance and recombination probability.

Near-infrared light emitting device using semiconductor nanocrystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Supran, Geoffrey J.S.; Song, Katherine W.; Hwang, Gyuweon

A near-infrared light emitting device can include semiconductor nanocrystals that emit at wavelengths beyond 1 .mu.m. The semiconductor nanocrystals can include a core and an overcoating on a surface of the core.

An intraocular micro light-emitting diode device for endo-illumination during pars plana vitrectomy.

PubMed

Koelbl, Philipp S; Lingenfelder, Christian; Spraul, Christoph W; Kampmeier, Juergen; Koch, Frank Hj; Kim, Yong Keun; Hessling, Martin

2018-03-01

Development of a new, fiber-free, single-use endo-illuminator for pars plana vitrectomy as a replacement for fiber-based systems with external light sources. The hand-guided intraocularly placed white micro light-emitting diode is evaluated for its illumination properties and potential photochemical and thermal hazards. A micro light-emitting diode was used to develop a single-use intraocular illumination system. The light-source-on-tip device was implemented in a prototype with 23G trocar compatible outer diameter of 0.6 mm. The experimental testing was performed on porcine eyes. All calculations of possible photochemical and thermal hazards during the application of the intraocular micro light-emitting diode were calculated according to DIN EN ISO 15007-2: 2014. The endo-illuminator generated a homogeneous and bright illumination of the intraocular space. The color impression was physiologic and natural. Contrary to initial apprehension, the possible risk caused by inserting a light-emitting diode into the intraocular vitreous was much smaller when compared to conventional fiber-based illumination systems. The photochemical and thermal hazards allowed a continuous exposure time to the retina of at least 4.7 h. This first intraocular light source showed that a light-emitting diode can be introduced into the eye. The system can be built as single-use illumination system. This light-source-on-tip light-emitting diode-endo-illumination combines a chandelier wide-angle illumination with an adjustable endo-illuminator.

Broadband visible light source based on AllnGaN light emitting diodes

DOEpatents

Crawford, Mary H.; Nelson, Jeffrey S.

2003-12-16

A visible light source device is described based on a light emitting diode and a nanocluster-based film. The light emitting diode utilizes a semiconductor quantum well structure between n-type and p-type semiconductor materials on the top surface a substrate such as sapphire. The nanocluster-based film is deposited on the bottom surface of the substrate and can be derived from a solution of MoS.sub.2, MoSe.sub.2, WS.sub.2, and WSe.sub.2 particles of size greater than approximately 2 nm in diameter and less than approximately 15 nm in diameter, having an absorption wavelength greater than approximately 300 nm and less than approximately 650 nm.

Using Organic Light-Emitting Electrochemical Thin-Film Devices to Teach Materials Science

ERIC Educational Resources Information Center

Sevian, Hannah; Muller, Sean; Rudmann, Hartmut; Rubner, Michael F.

2004-01-01

Materials science can be taught by applying organic light-emitting electrochemical thin-film devices and in this method students were allowed to make a light-emitting device by spin coating a thin film containing ruthenium (II) complex ions onto a glass slide. Through this laboratory method students are provided with the opportunity to learn about…

Organic light emitting device structure for obtaining chromaticity stability

DOEpatents

Tung, Yeh-Jiun [Princeton, NJ; Ngo, Tan [Levittown, PA

2007-05-01

The present invention relates to organic light emitting devices (OLEDs). The devices of the present invention are efficient white or multicolored phosphorescent OLEDs which have a high color stability over a wide range of luminances. The devices of the present invention comprise an emissive region having at least two emissive layers, with each emissive layer comprising a different host and emissive dopant, wherein at least one of the emissive dopants emits by phosphorescence.

Organic light emitting device structures for obtaining chromaticity stability

DOEpatents

Tung, Yeh-Jiun; Lu, Michael; Kwong, Raymond C.

2005-04-26

The present invention relates to organic light emitting devices (OLEDs). The devices of the present invention are efficient white or multicolored phosphorescent OLEDs which have a high color stability over a wide range of luminances. The devices of the present invention comprise an emissive region having at least two emissive layers, with each emissive layer comprising a different host and emissive dopant, wherein at least one of the emissive dopants emits by phosphorescence.

Tunable blue organic light emitting diode based on aluminum calixarene supramolecular complex

NASA Astrophysics Data System (ADS)

Legnani, C.; Reyes, R.; Cremona, M.; Bagatin, I. A.; Toma, H. E.

2004-07-01

In this letter, the results of supramolecular organic light emitting diodes using a calix[4] arene complex thin film as emitter and electron transporting layer are presented. The devices were grown onto glass substrates coated with indium-tin-oxide layer and aluminum thick (150nm) cathode. By applying a dc voltage between the device electrodes in forward bias condition, a blue light emission in the active area of the device was observed. It was found that the electroluminescent emission peak can be tuned between 470 and 510nm changing the applied voltage bias from 4.3 to 5.4V. The observed tunable emission can be associated with an energy transfer from the calixarene compound.

Deep ultraviolet light-emitting and laser diodes

NASA Astrophysics Data System (ADS)

Khan, Asif; Asif, Fatima; Muhtadi, Sakib

2016-02-01

Nearly all the air-water purification/polymer curing systems and bio-medical instruments require 250-300 nm wavelength ultraviolet light for which mercury lamps are primarily used. As a potential replacement for these hazardous mercury lamps, several global research teams are developing AlGaN based Deep Ultraviolet (DUV) light emitting diodes (LEDs) and DUV LED Lamps and Laser Diodes over Sapphire and AlN substrates. In this paper, we review the current research focus and the latest device results. In addition to the current results we also discuss a new quasipseudomorphic device design approach. This approach which is much easier to integrate in a commercial production setting was successfully used to demonstrate UVC devices on Sapphire substrates with performance levels equal to or better than the conventional relaxed device designs.

Quantum mechanical modeling the emission pattern and polarization of nanoscale light emitting diodes.

PubMed

Wang, Rulin; Zhang, Yu; Bi, Fuzhen; Frauenheim, Thomas; Chen, GuanHua; Yam, ChiYung

2016-07-21

Understanding of the electroluminescence (EL) mechanism in optoelectronic devices is imperative for further optimization of their efficiency and effectiveness. Here, a quantum mechanical approach is formulated for modeling the EL processes in nanoscale light emitting diodes (LED). Based on non-equilibrium Green's function quantum transport equations, interactions with the electromagnetic vacuum environment are included to describe electrically driven light emission in the devices. The presented framework is illustrated by numerical simulations of a silicon nanowire LED device. EL spectra of the nanowire device under different bias voltages are obtained and, more importantly, the radiation pattern and polarization of optical emission can be determined using the current approach. This work is an important step forward towards atomistic quantum mechanical modeling of the electrically induced optical response in nanoscale systems.

White light-emitting organic electroluminescent devices

DOEpatents

Shiang, Joseph John; Duggal, Anil Raj; Parthasarathy, Gautam

2006-06-20

A light-emitting device comprises a light-emitting member, which comprises two electrodes, at least two organic electroluminescent ("EL") materials disposed between the electrodes, a charge blocking material disposed between the electrodes, and at least one photoluminescent ("PL") material. The light-emitting member emits electromagnetic ("EM") radiation having a first spectrum in response to a voltage applied across the two electrodes. The PL material absorbs a portion of the EM radiation emitted by the light-emitting member and emits EM radiation having second spectrum different than the first spectrum. Each of the organic EL materials emits EM radiation having a wavelength range selected from the group consisting of blue and red wavelength ranges.

Color mixing from monolithically integrated InGaN-based light-emitting diodes by local strain engineering

NASA Astrophysics Data System (ADS)

Chung, Kunook; Sui, Jingyang; Demory, Brandon; Ku, Pei-Cheng

2017-07-01

Additive color mixing across the visible spectrum was demonstrated from an InGaN based light-emitting diode (LED) pixel comprising red, green, and blue subpixels monolithically integrated and enabled by local strain engineering. The device was fabricated using a top-down approach on a metal-organic chemical vapor deposition-grown sample consisting of a typical LED epitaxial stack. The three color subpixels were defined in a single lithographic step. The device was characterized for its electrical properties and emission spectra under an uncooled condition, which is desirable in practical applications. The color mixing was controlled by pulse-width modulation, and the degree of color control was also characterized.

[A novel yellow organic light-emitting device].

PubMed

Ma, Chen; Wang, Hua; Hao, Yu-Ying; Gao, Zhi-Xiang; Zhou, He-Feng; Xu, Bing-She

2008-07-01

The fabrication of a novel organic yellow-light-emitting device using Rhodamine B as dopant with double quantum-well (DQW) structure was introduced in the present article. The structure and thickness of this device is ITO/CuPc (6 nm) /NPB (20 nm) /Alq3 (3 nm)/Alq3 : Rhodamine B (3 nm) /Alq3 (3 nm) /Al q3 : Rhodamine B(3 nm) /Alq3 (30 nm) /Liq (5 nm)/Al (30 nm). With the detailed investigation of electroluminescence of the novel organic yellow-light-emitting device, the authors found that the doping concentration of Rhodamine B (RhB) had a very big influence on luminance and efficiency of the organic yellow-light-emitting device. When doping concentration of Rhodamine B (RhB) was 1.5 wt%, the organic yellow-light-emitting device was obtained with the maximum current efficiency of 1.526 cd x A(-1) and the maximum luminance of 1 309 cd x m(-2). It can be seen from the EL spectra of the devices that there existed energy transferring from Alq3 to RhB in the organic light-emitting layers. When the doping concentration of RhB increased, lambda(max) of EL spectra redshifted obviously. The phenomenon was attributed to the Stokes effect of quantum wells and self-polarization of RhB dye molecules.

Stacked white OLED having separate red, green and blue sub-elements

DOEpatents

Forrest, Stephen; Qi, Xiangfei; Slootsky, Michael

2014-07-01

The present invention relates to efficient organic light emitting devices (OLEDs). The devices employ three emissive sub-elements, typically emitting red, green and blue, to sufficiently cover the visible spectrum. Thus, the devices may be white-emitting OLEDs, or WOLEDs. Each sub-element comprises at least one organic layer which is an emissive layer--i.e., the layer is capable of emitting light when a voltage is applied across the stacked device. The sub-elements are vertically stacked and are separated by charge generating layers. The charge-generating layers are layers that inject charge carriers into the adjacent layer(s) but do not have a direct external connection.

Si light-emitting device in integrated photonic CMOS ICs

NASA Astrophysics Data System (ADS)

Xu, Kaikai; Snyman, Lukas W.; Aharoni, Herzl

2017-07-01

The motivation for integrated Si optoelectronics is the creation of low-cost photonics for mass-market applications. Especially, the growing demand for sensitive biochemical sensors in the environmental control or medicine leads to the development of integrated high resolution sensors. Here CMOS-compatible Si light-emitting device structures are presented for investigating the effect of various depletion layer profiles and defect engineering on the photonic transition in the 1.4-2.8 eV. A novel Si device is proposed to realize both a two-terminal Si-diode light-emitting device and a three-terminal Si gate-controlled diode light-emitting device in the same device structure. In addition to the spectral analysis, differences between two-terminal and three-terminal devices are discussed, showing the light emission efficiency change. The proposed Si optical source may find potential applications in micro-photonic systems and micro-optoelectro-mechanical systems (MOEMS) in CMOS integrated circuitry.

Stable blue phosphorescent organic light emitting devices

DOEpatents

Forrest, Stephen R.; Thompson, Mark; Giebink, Noel

2014-08-26

Novel combination of materials and device architectures for organic light emitting devices is provided. An organic light emitting device, is provided, having an anode, a cathode, and an emissive layer disposed between the anode and the cathode. The emissive layer includes a host and a phosphorescent emissive dopant having a peak emissive wavelength less than 500 nm, and a radiative phosphorescent lifetime less than 1 microsecond. Preferably, the phosphorescent emissive dopant includes a ligand having a carbazole group.

Spectral matching research for light-emitting diode-based neonatal jaundice therapeutic device light source

NASA Astrophysics Data System (ADS)

Gan, Ruting; Guo, Zhenning; Lin, Jieben

2015-09-01

To decrease the risk of bilirubin encephalopathy and minimize the need for exchange transfusions, we report a novel design for light source of light-emitting diode (LED)-based neonatal jaundice therapeutic device (NJTD). The bilirubin absorption spectrum in vivo was regarded as target. Based on spectral constructing theory, we used commercially available LEDs with different peak wavelengths and full width at half maximum as matching light sources. Simple genetic algorithm was first proposed as the spectral matching method. The required LEDs number at each peak wavelength was calculated, and then, the commercial light source sample model of the device was fabricated to confirm the spectral matching technology. In addition, the corresponding spectrum was measured and the effect was analyzed finally. The results showed that fitted spectrum was very similar to the target spectrum with 98.86 % matching degree, and the actual device model has a spectrum close to the target with 96.02 % matching degree. With higher fitting degree and efficiency, this matching algorithm is very suitable for light source matching technology of LED-based spectral distribution, and bilirubin absorption spectrum in vivo will be auspicious candidate for the target spectrum of new LED-based NJTD light source.

Hybrid Structure White Organic Light Emitting Diode for Enhanced Efficiency by Varied Doping Rate.

PubMed

Kim, Dong-Eun; Kang, Min-Jae; Park, Gwang-Ryeol; Kim, Nam-Kyu; Lee, Burm-Jong; Kwon, Young-Soo; Shin, Hoon-Kyu

2016-03-01

Novel materials based on Zn(HPB)2 and Ir-complexes were synthesized as blue or red emitters, respectively. White organic light emitting diodes were fabricated using the Zn(HPB)2 as a blue emitting layer, Ir-complexes as a red emitting layer and Alq3 as a green emitting layer. The obtained experimental results, were based on white OLEDs fabricated using double emission layers of Zn(HPB)2 and Alq3:Ir-complexes. The doping rate of the Ir-complexes was varied at 0.4%, 0.6%, 0.8% and 1.0%. When the doping rate of the Alq3:Ir-complexes was 0.6%, a white emission was achieved. The Commission Internationale de l'Eclairage coordinates of the device's white emission were (0.316, 0.331) at an applied voltage of 10.75 V.

Fabrication and characterization of the Si-photonics-integrated vertical resonant-cavity light-emitting diode

NASA Astrophysics Data System (ADS)

Kong, Duanhua; Kim, Taek; Kim, Sihan; Hong, Hyungi; Shcherbatko, Igor; Park, Youngsoo; Shin, Dongjae; Ha, Kyoung-Ho; Jeong, Gitae

2014-03-01

We designed and fabricated a 1.3-um hybrid vertical Resonant-Cavity Light-Emitting Diode for optical interconnect by using direct III-V wafer bonding on silicon on insulator (SOI). The device included InP based front distributed Bragg reflector (DBR), InGaAlAs based active layer, and SOI-based high-contrast-grating (HCG) as a back reflector. 42-uW continuous wave optical power was achieved at 20mA at room temperature.

Vertical cavity surface emitting lasers from all-inorganic perovskite quantum dots

NASA Astrophysics Data System (ADS)

Sun, Handong; Wang, Yue; Li, Xiaoming; Zeng, Haibo

We report the breakthrough in realizing the challenging while practically desirable vertical cavity surface emitting lasers (VCSELs) based on the CsPbX3 inorganic perovskite nanocrystals (IPNCs). These laser devices feature record low threshold (9 µJ/cm2), unidirectional output (beam divergence of 3.6º) and superb stability. We show that both single-mode and multimode lasing operation are achievable in the device. In contrast to traditional metal chacogenide colloidal quantum dots based lasers where the pump thresholds for the green and blue wavelengths are typically much higher than that of the red, these CsPbX3 IPNC-VCSEL devices are able to lase with comparable thresholds across the whole visible spectral range, which is appealing for achieving single source-pumped full-color lasers. We further reveal that these lasers can operate in quasi-steady state regime, which is very practical and cost-effective. Given the facile solution processibility, our CsPbX3 IPNC-VCSEL devices may hold great potential in developing low-cost yet high-performance lasers, promising in revolutionizing the vacuum-based epitaxial semiconductor lasers.

Study of voltage decrease in organic light emitting diodes during the initial stage of lifetime

NASA Astrophysics Data System (ADS)

Cusumano, P.

2016-02-01

We report the results of lifetime DC testing at constant current of not-encapsulated organic light emitting diodes (OLEDs) based on Tris (8 idroxyquinoline) aluminum (Alq3) as emitting material. In particular, a voltage decrease during the initial stage of the lifetime test is observed. The cause of this behavior is also discussed, mainly linked to initial Joule self-heating of the device, rising its temperature above room temperature until thermal equilibrium is reached at steady state.

In situ calibration of a light source in a sensor device

DOEpatents

Okandan, Murat; Serkland, Darwin k.; Merchant, Bion J.

2015-12-29

A sensor device is described herein, wherein the sensor device includes an optical measurement system, such as an interferometer. The sensor device further includes a low-power light source that is configured to emit an optical signal having a constant wavelength, wherein accuracy of a measurement output by the sensor device is dependent upon the optical signal having the constant wavelength. At least a portion of the optical signal is directed to a vapor cell, the vapor cell including an atomic species that absorbs light having the constant wavelength. A photodetector captures light that exits the vapor cell, and generates an electrical signal that is indicative of intensity of the light that exits the vapor cell. A control circuit controls operation of the light source based upon the electrical signal, such that the light source emits the optical signal with the constant wavelength.

Efficient and mechanically robust stretchable organic light-emitting devices by a laser-programmable buckling process

PubMed Central

Yin, Da; Feng, Jing; Ma, Rui; Liu, Yue-Feng; Zhang, Yong-Lai; Zhang, Xu-Lin; Bi, Yan-Gang; Chen, Qi-Dai; Sun, Hong-Bo

2016-01-01

Stretchable organic light-emitting devices are becoming increasingly important in the fast-growing fields of wearable displays, biomedical devices and health-monitoring technology. Although highly stretchable devices have been demonstrated, their luminous efficiency and mechanical stability remain impractical for the purposes of real-life applications. This is due to significant challenges arising from the high strain-induced limitations on the structure design of the device, the materials used and the difficulty of controlling the stretch-release process. Here we have developed a laser-programmable buckling process to overcome these obstacles and realize a highly stretchable organic light-emitting diode with unprecedented efficiency and mechanical robustness. The strained device luminous efficiency −70 cd A−1 under 70% strain - is the largest to date and the device can accommodate 100% strain while exhibiting only small fluctuations in performance over 15,000 stretch-release cycles. This work paves the way towards fully stretchable organic light-emitting diodes that can be used in wearable electronic devices. PMID:27187936

Long-Lived Flexible Displays Employing Efficient and Stable Inverted Organic Light-Emitting Diodes.

PubMed

Fukagawa, Hirohiko; Sasaki, Tsubasa; Tsuzuki, Toshimitsu; Nakajima, Yoshiki; Takei, Tatsuya; Motomura, Genichi; Hasegawa, Munehiro; Morii, Katsuyuki; Shimizu, Takahisa

2018-05-29

Although organic light-emitting diodes (OLEDs) are promising for use in applications such as in flexible displays, reports of long-lived flexible OLED-based devices are limited due to the poor environmental stability of OLEDs. Flexible substrates such as plastic allow ambient oxygen and moisture to permeate into devices, which degrades the alkali metals used for the electron-injection layer in conventional OLEDs (cOLEDs). Here, the fabrication of a long-lived flexible display is reported using efficient and stable inverted OLEDs (iOLEDs), in which electrons can be effectively injected without the use of alkali metals. The flexible display employing iOLEDs can emit light for over 1 year with simplified encapsulation, whereas a flexible display employing cOLEDs exhibits almost no luminescence after only 21 d with the same encapsulation. These results demonstrate the great potential of iOLEDs to replace cOLEDs employing alkali metals for use in a wide variety of flexible organic optoelectronic devices. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Cadmium-free quantum dot light emitting devices: energy-transfer realizing pure blue emission.

PubMed

Ji, Wenyu; Jing, Pengtao; Fan, Yi; Zhao, Jialong; Wang, Yunjun; Kong, Xianggui

2013-01-01

In this study, deep blue, pure electroluminescence (EL) at 441.5 nm from a ZnSe/ZnS quantum dot light-emitting device (QD-LED) is obtained by using poly (4-butylphenyl-diphenyl-amine) (poly-TPD) as the hole-transport layer (HTL) to open up the channel for energy transfer from poly-TPD to QDs. The emission originating from HTL is observed in the QD-LED with N,N'-bis (tolyl)-N,N'-diphenyl-1,1'-biphenyl-4,4'-diamine functionalized with two styryl groups (2-TPD) as the HTL due to inefficient energy-transfer from 2-TPD to QDs. The poly-TPD based device exhibits color-saturated blue emission with a narrow spectral bandwidth of full width at half maximum (~17.2 nm). These results explore the operating mechanism of the QD EL and signify a remarkable progress in deep blue QD-LEDs based on environmental-friendly QD materials.

Efficient non-doped phosphorescent orange, blue and white organic light-emitting devices

NASA Astrophysics Data System (ADS)

Yin, Yongming; Yu, Jing; Cao, Hongtao; Zhang, Letian; Sun, Haizhu; Xie, Wenfa

2014-10-01

Efficient phosphorescent orange, blue and white organic light-emitting devices (OLEDs) with non-doped emissive layers were successfully fabricated. Conventional blue phosphorescent emitters bis [4,6-di-fluorophenyl]-pyridinato-N,C2'] picolinate (Firpic) and Bis(2,4-difluorophenylpyridinato) (Fir6) were adopted to fabricate non-doped blue OLEDs, which exhibited maximum current efficiency of 7.6 and 4.6 cd/A for Firpic and Fir6 based devices, respectively. Non-doped orange OLED was fabricated utilizing the newly reported phosphorescent material iridium (III) (pbi)2Ir(biq), of which manifested maximum current and power efficiency of 8.2 cd/A and 7.8 lm/W. The non-doped white OLEDs were achieved by simply combining Firpic or Fir6 with a 2-nm (pbi)2Ir(biq). The maximum current and power efficiency of the Firpic and (pbi)2Ir(biq) based white OLED were 14.8 cd/A and 17.9 lm/W.

Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors.

PubMed

Lee, Ya-Ju; Yang, Zu-Po; Chen, Pin-Guang; Hsieh, Yung-An; Yao, Yung-Chi; Liao, Ming-Han; Lee, Min-Hung; Wang, Mei-Tan; Hwang, Jung-Min

2014-10-20

In this study, we report a novel monolithically integrated GaN-based light-emitting diode (LED) with metal-oxide-semiconductor field-effect transistor (MOSFET). Without additionally introducing complicated epitaxial structures for transistors, the MOSFET is directly fabricated on the exposed n-type GaN layer of the LED after dry etching, and serially connected to the LED through standard semiconductor-manufacturing technologies. Such monolithically integrated LED/MOSFET device is able to circumvent undesirable issues that might be faced by other kinds of integration schemes by growing a transistor on an LED or vice versa. For the performances of resulting device, our monolithically integrated LED/MOSFET device exhibits good characteristics in the modulation of gate voltage and good capability of driving injected current, which are essential for the important applications such as smart lighting, interconnection, and optical communication.

Quantum-dot light-emitting diodes utilizing CdSe /ZnS nanocrystals embedded in TiO2 thin film

NASA Astrophysics Data System (ADS)

Kang, Seung-Hee; Kumar, Ch. Kiran; Lee, Zonghoon; Kim, Kyung-Hyun; Huh, Chul; Kim, Eui-Tae

2008-11-01

Quantum-dot (QD) light-emitting diodes (LEDs) are demonstrated on Si wafers by embedding core-shell CdSe /ZnS nanocrystals in TiO2 thin films via plasma-enhanced metallorganic chemical vapor deposition. The n-TiO2/QDs /p-Si LED devices show typical p-n diode current-voltage and efficient electroluminescence characteristics, which are critically affected by the removal of QD surface ligands. The TiO2/QDs /Si system we presented can offer promising Si-based optoelectronic and electronic device applications utilizing numerous nanocrystals synthesized by colloidal solution chemistry.

Structurally Integrated Photoluminescent Chemical and Biological Sensors: An Organic Light-Emitting Diode-Based Platform

NASA Astrophysics Data System (ADS)

Shinar, J.; Shinar, R.

The chapter describes the development, advantages, challenges, and potential of an emerging, compact photoluminescence-based sensing platform for chemical and biological analytes, including multiple analytes. In this platform, the excitation source is an array of organic light-emitting device (OLED) pixels that is structurally integrated with the sensing component. Steps towards advanced integration with additionally a thin-film-based photodetector are also described. The performance of the OLED-based sensing platform is examined for gas-phase and dissolved oxygen, glucose, lactate, ethanol, hydrazine, and anthrax lethal factor.

Vacuum-deposited, nonpolymeric flexible organic light-emitting devices.

PubMed

Gu, G; Burrows, P E; Venkatesh, S; Forrest, S R; Thompson, M E

1997-02-01

We demonstrate mechanically flexible, organic light-emitting devices (OLED's) based on the nonpolymetric thin-film materials tris-(8-hydroxyquinoline) aluminum (Alq(3)) and N, N(?) -diphenyl- N, N(?) -bis(3-methylphenyl)1- 1(?) biphenyl-4, 4(?) diamine (TPD). The single heterostructure is vacuum deposited upon a transparent, lightweight, thin plastic substrate precoated with a transparent, conducting indium tin oxide thin film. The flexible OLED performance is comparable with that of conventional OLED's deposited upon glass substrates and does not deteriorate after repeated bending. The large-area (~1 - cm>(2)) devices can be bent without failure even after a permanent fold occurs if they are on the convex substrate surface or over a bend radius of ~0.5>cm if they are on the concave surface. Such devices are useful for ultralightweight, flexible, and comfortable full-color flat panel displays.

Broadband light sources based on InAs/InGaAs metamorphic quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seravalli, L.; Trevisi, G.; Frigeri, P.

We propose a design for a semiconductor structure emitting broadband light in the infrared, based on InAs quantum dots (QDs) embedded into a metamorphic step-graded In{sub x}Ga{sub 1−x}As buffer. We developed a model to calculate the metamorphic QD energy levels based on the realistic QD parameters and on the strain-dependent material properties; we validated the results of simulations by comparison with the experimental values. On this basis, we designed a p-i-n heterostructure with a graded index profile toward the realization of an electrically pumped guided wave device. This has been done by adding layers where QDs are embedded in In{submore » x}Al{sub y}Ga{sub 1−x−y}As layers, to obtain a symmetric structure from a band profile point of view. To assess the room temperature electro-luminescence emission spectrum under realistic electrical injection conditions, we performed device-level simulations based on a coupled drift-diffusion and QD rate equation model. On the basis of the device simulation results, we conclude that the present proposal is a viable option to realize broadband light-emitting devices.« less

Solar-energy production and energy-efficient lighting: photovoltaic devices and white-light-emitting diodes using poly(2,7-fluorene), poly(2,7-carbazole), and poly(2,7-dibenzosilole) derivatives.

PubMed

Beaupré, Serge; Boudreault, Pierre-Luc T; Leclerc, Mario

2010-02-23

World energy needs grow each year. To address global warming and climate changes the search for renewable energy sources with limited greenhouse gas emissions and the development of energy-efficient lighting devices are underway. This Review reports recent progress made in the synthesis and characterization of conjugated polymers based on bridged phenylenes, namely, poly(2,7-fluorene)s, poly(2,7-carbazole)s, and poly(2,7-dibenzosilole)s, for applications in solar cells and white-light-emitting diodes. The main strategies and remaining challenges in the development of reliable and low-cost renewable sources of energy and energy-saving lighting devices are discussed.

Carrier-induced transient defect mechanism for non-radiative recombination in InGaN light-emitting devices

DOE PAGES

Bang, Junhyeok; Sun, Y. Y.; Song, Jung -Hoon; ...

2016-04-14

Non-radiative recombination (NRR) of excited carriers poses a serious challenge to optoelectronic device efficiency. Understanding the mechanism is thus crucial to defect physics and technological applications. Here, by using first-principles calculations, we propose a new NRR mechanism, where excited carriers recombine via a Frenkel-pair (FP) defect formation. While in the ground state the FP is high in energy and is unlikely to form, in the electronic excited states its formation is enabled by a strong electron-phonon coupling of the excited carriers. As a result, this NRR mechanism is expected to be general for wide-gap semiconductors, rather than being limited tomore » InGaN-based light emitting devices.« less

Surface emitting ring quantum cascade lasers for chemical sensing

NASA Astrophysics Data System (ADS)

Szedlak, Rolf; Hayden, Jakob; Martín-Mateos, Pedro; Holzbauer, Martin; Harrer, Andreas; Schwarz, Benedikt; Hinkov, Borislav; MacFarland, Donald; Zederbauer, Tobias; Detz, Hermann; Andrews, Aaron Maxwell; Schrenk, Werner; Acedo, Pablo; Lendl, Bernhard; Strasser, Gottfried

2018-01-01

We review recent advances in chemical sensing applications based on surface emitting ring quantum cascade lasers (QCLs). Such lasers can be implemented in monolithically integrated on-chip laser/detector devices forming compact gas sensors, which are based on direct absorption spectroscopy according to the Beer-Lambert law. Furthermore, we present experimental results on radio frequency modulation up to 150 MHz of surface emitting ring QCLs. This technique provides detailed insight into the modulation characteristics of such lasers. The gained knowledge facilitates the utilization of ring QCLs in combination with spectroscopic techniques, such as heterodyne phase-sensitive dispersion spectroscopy for gas detection and analysis.

III-nitride quantum dots for ultra-efficient solid-state lighting

DOE PAGES

Wierer, Jr., Jonathan J.; Tansu, Nelson; Fischer, Arthur J.; ...

2016-05-23

III-nitride light-emitting diodes (LEDs) and laser diodes (LDs) are ultimately limited in performance due to parasitic Auger recombination. For LEDs, the consequences are poor efficiencies at high current densities; for LDs, the consequences are high thresholds and limited efficiencies. Here, we present arguments for III-nitride quantum dots (QDs) as active regions for both LEDs and LDs, to circumvent Auger recombination and achieve efficiencies at higher current densities that are not possible with quantum wells. QD-based LDs achieve gain and thresholds at lower carrier densities before Auger recombination becomes appreciable. QD-based LEDs achieve higher efficiencies at higher currents because of highermore » spontaneous emission rates and reduced Auger recombination. The technical challenge is to control the size distribution and volume of the QDs to realize these benefits. In conclusion, if constructed properly, III-nitride light-emitting devices with QD active regions have the potential to outperform quantum well light-emitting devices, and enable an era of ultra-efficient solidstate lighting.« less

Influence of AZO stair-like transparent layers on GaN-based light-emitting diodes

NASA Astrophysics Data System (ADS)

Liou, Syuan-Hao; Tsai, Jung-Hui; Liu, Wen-Chau; Lin, Pao-Sheng; Chen, Yu-Chi

2017-10-01

The GaN-based light-emitting diodes (LEDs) with various height ratios of aluminum-doped zinc oxide (AZO) stair-like transparent layers are fabricated and comparatively investigated. The characteristics of the LEDs with conventional plane AZO transparent layer (device A) and AZO stair-like transparent layers having height ratios of 1:1:1 (device B), 1.5:1:0.5 (device C), and 0.5:1:1.5 (device D) are compared. Attributed that the lower resistance is formed in the thinner AZO film of the stair-like structure, the current crowding effect is improved for extending the whole current-spreading area. Experimentally, the forward turn-on voltages of the LEDs are reduced from 3.68 V to 3.42 V as the plane AZO transparent layer is processed to form the stair-like transparent layers with height ratio of 1:1:1. In addition, the light luminous flux, output power, external quantum efficiency, and wall-plug efficiency of the device B are enhanced by 30.5, 12.1, 22.2, and 20.7%, respectively, as compared to the traditional device with plane AZO transparent layer.

Estimating the Infrared Radiation Wavelength Emitted by a Remote Control Device Using a Digital Camera

ERIC Educational Resources Information Center

Catelli, Francisco; Giovannini, Odilon; Bolzan, Vicente Dall Agnol

2011-01-01

The interference fringes produced by a diffraction grating illuminated with radiation from a TV remote control and a red laser beam are, simultaneously, captured by a digital camera. Based on an image with two interference patterns, an estimate of the infrared radiation wavelength emitted by a TV remote control is made. (Contains 4 figures.)

Organic light emitting device architecture for reducing the number of organic materials

DOEpatents

D'Andrade, Brian [Westampton, NJ; Esler, James [Levittown, PA

2011-10-18

An organic light emitting device is provided. The device includes an anode and a cathode. A first emissive layer is disposed between the anode and the cathode. The first emissive layer includes a first non-emitting organic material, which is an organometallic material present in the first emissive layer in a concentration of at least 50 wt %. The first emissive layer also includes a first emitting organic material. A second emissive layer is disposed between the first emissive layer and the cathode, preferably, in direct contact with the first emissive layer. The second emissive material includes a second non-emitting organic material and a second emitting organic material. The first and second non-emitting materials, and the first and second emitting materials, are all different materials. A first non-emissive layer is disposed between the first emissive layer and the anode, and in direct contact with the first emissive layer. The first non- emissive layer comprises the first non-emissive organic material.

Exciplex-Forming Co-Host-Based Red Phosphorescent Organic Light-Emitting Diodes with Long Operational Stability and High Efficiency.

PubMed

Lee, Jeong-Hwan; Shin, Hyun; Kim, Jae-Min; Kim, Kwon-Hyeon; Kim, Jang-Joo

2017-02-01

The use of exciplex forming cohosts and phosphors incredibly boosts the efficiency of organic light-emitting diodes (OLEDs) by providing a barrier-free charge injection into an emitting layer and a broad recombination zone. However, most of the efficient OLEDs based on the exciplex forming cohosts has suffered from the short operational lifetime. Here, we demonstrated phosphorescent OLEDs (PhOLEDs) having both high efficiency and long lifetime by using a new exciplex forming cohost composed of N,N'-diphenyl-N,N'-bis(1,1'-biphenyl)-4,4'-diamine (NPB) and (1,3,5-triazine-2,4,6-triyl)tris(benzene-3,1-diyl))tris(diphenylphosphine oxide) (PO-T2T). The red-emitting PhOLEDs using the exciplex forming cohost achieved a maximum external quantum efficiency (EQE) of 34.1% and power efficiency of 62.2 lm W 1- with low operating voltages and low efficiency roll-offs. More importantly, the device demonstrated a long lifetime around 2249 h from 1000 cd m -2 to 900 cd m -2 (LT 90 ) under a continuous flow of constant current. The efficiencies of the devices are the highest for red OLEDs with an LT 90 > 1000 h.

Synthesis and application of pyridine-based ambipolar hosts: control of charge balance in organic light emitting devices (OLEDs) by chemical structure modification

DOE Office of Scientific and Technical Information (OSTI.GOV)

Koech, Phillip K.; Polikarpov, Evgueni; Rainbolt, James E.

2010-11-05

Pyridine-based host materials were synthesized via Grignard metathesis of bromopyridines to provide the required organometallic reagent. The isomeric hosts (4-(9H-carbazol-9-yl)phenyl)(phenyl)(pyridin-3-yl)phosphine oxide (HM-A4), (5-(9H-carbazol-9-yl)pyridin-2-yl)diphenylphosphine oxide (HM-A5), and (5-(diphenylamino)pyridin-2-yl)diphenylphosphine oxide (HM-A6), (4-(diphenylamino)phenyl)(phenyl)(pyridin-3-yl)phosphine oxide (HM-A8) have similar frontier orbital energies. Organic light emitting devices (OLEDs) fabricated using the series of the host materials demonstrate that small structural modification of the host results in significant change in charge transporting ability.

A novel electroluminescent PPV copolymer and silsesquioxane nanocomposite film for the preparation of efficient PLED devices.

PubMed

Venegoni, Ivan; Carniato, Fabio; Olivero, Francesco; Bisio, Chiara; Pira, Nello Li; Lambertini, Vito Guido; Marchese, Leonardo

2012-11-02

Polymer light-emitting diodes (PLEDs) have attracted growing interest in recent years for their potential use in displays and lighting fields. Nevertheless, PLED devices have some disadvantages in terms of low optoelectronic efficiency, high cost, short lifetimes and low thermal stability, which limit their final applications. Huge efforts have been made recently to improve the performances of these devices. The addition of inorganic or hybrid organic-inorganic nanoparticles to the light-emitting polymers, for example, allows their thermal stability and electroluminescent efficiency to be increased. Following this approach, novel PLED devices based on composite films of PPV-derivative copolymer (commercial name Super Yellow, SY) and octaisobutil POSS, were developed in this study. The device containing Super Yellow loaded with 1 wt% of POSS showed higher efficiency (ca. +30%) and improved lifetime in comparison to PLED prepared with the pure electroluminescent polymer. The PLED devices developed in this study are suitable candidates for automotive dashboards and, in general, for lighting applications.

Recent advances in conjugated polymers for light emitting devices.

PubMed

Alsalhi, Mohamad Saleh; Alam, Javed; Dass, Lawrence Arockiasamy; Raja, Mohan

2011-01-01

A recent advance in the field of light emitting polymers has been the discovery of electroluminescent conjugated polymers, that is, kind of fluorescent polymers that emit light when excited by the flow of an electric current. These new generation fluorescent materials may now challenge the domination by inorganic semiconductor materials of the commercial market in light-emitting devices such as light-emitting diodes (LED) and polymer laser devices. This review provides information on unique properties of conjugated polymers and how they have been optimized to generate these properties. The review is organized in three sections focusing on the major advances in light emitting materials, recent literature survey and understanding the desirable properties as well as modern solid state lighting and displays. Recently, developed conjugated polymers are also functioning as roll-up displays for computers and mobile phones, flexible solar panels for power portable equipment as well as organic light emitting diodes in displays, in which television screens, luminous traffic, information signs, and light-emitting wallpaper in homes are also expected to broaden the use of conjugated polymers as light emitting polymers. The purpose of this review paper is to examine conjugated polymers in light emitting diodes (LEDs) in addition to organic solid state laser. Furthermore, since conjugated polymers have been approved as light-emitting organic materials similar to inorganic semiconductors, it is clear to motivate these organic light-emitting devices (OLEDs) and organic lasers for modern lighting in terms of energy saving ability. In addition, future aspects of conjugated polymers in LEDs were also highlighted in this review.

Recent Advances in Conjugated Polymers for Light Emitting Devices

PubMed Central

AlSalhi, Mohamad Saleh; Alam, Javed; Dass, Lawrence Arockiasamy; Raja, Mohan

2011-01-01

A recent advance in the field of light emitting polymers has been the discovery of electroluminescent conjugated polymers, that is, kind of fluorescent polymers that emit light when excited by the flow of an electric current. These new generation fluorescent materials may now challenge the domination by inorganic semiconductor materials of the commercial market in light-emitting devices such as light-emitting diodes (LED) and polymer laser devices. This review provides information on unique properties of conjugated polymers and how they have been optimized to generate these properties. The review is organized in three sections focusing on the major advances in light emitting materials, recent literature survey and understanding the desirable properties as well as modern solid state lighting and displays. Recently, developed conjugated polymers are also functioning as roll-up displays for computers and mobile phones, flexible solar panels for power portable equipment as well as organic light emitting diodes in displays, in which television screens, luminous traffic, information signs, and light-emitting wallpaper in homes are also expected to broaden the use of conjugated polymers as light emitting polymers. The purpose of this review paper is to examine conjugated polymers in light emitting diodes (LEDs) in addition to organic solid state laser. Furthermore, since conjugated polymers have been approved as light-emitting organic materials similar to inorganic semiconductors, it is clear to motivate these organic light-emitting devices (OLEDs) and organic lasers for modern lighting in terms of energy saving ability. In addition, future aspects of conjugated polymers in LEDs were also highlighted in this review. PMID:21673938

Nano-particle based scattering layers for optical efficiency enhancement of organic light-emitting diodes and organic solar cells

NASA Astrophysics Data System (ADS)

Chang, Hong-Wei; Lee, Jonghee; Hofmann, Simone; Hyun Kim, Yong; Müller-Meskamp, Lars; Lüssem, Björn; Wu, Chung-Chih; Leo, Karl; Gather, Malte C.

2013-05-01

The performance of both organic light-emitting diodes (OLEDs) and organic solar cells (OSC) depends on efficient coupling between optical far field modes and the emitting/absorbing region of the device. Current approaches towards OLEDs with efficient light-extraction often are limited to single-color emission or require expensive, non-standard substrates or top-down structuring, which reduces compatibility with large-area light sources. Here, we report on integrating solution-processed nano-particle based light-scattering films close to the active region of organic semiconductor devices. In OLEDs, these films efficiently extract light that would otherwise remain trapped in the device. Without additional external outcoupling structures, translucent white OLEDs containing these scattering films achieve luminous efficacies of 46 lm W-1 and external quantum efficiencies of 33% (both at 1000 cd m-2). These are by far the highest numbers ever reported for translucent white OLEDs and the best values in the open literature for any white device on a conventional substrate. By applying additional light-extraction structures, 62 lm W-1 and 46% EQE are reached. Besides universally enhancing light-extraction in various OLED configurations, including flexible, translucent, single-color, and white OLEDs, the nano-particle scattering film boosts the short-circuit current density in translucent organic solar cells by up to 70%.

Eastern Kodak Company

DOE Office of Scientific and Technical Information (OSTI.GOV)

Y.S. Tyan

2009-06-30

Lighting consumes more than 20% of electricity generated in the United States. Solid state lighting relies upon either inorganic or organic light-emitting diodes (OLEDs). OLED devices because of their thinness, fast response, excellent color, and efficiency could become the technology of choice for future lighting applications, provided progress is made to increase power efficiency and device lifetime and to develop cost-effective manufacturing processes. As a first step in this process, Eastman Kodak Company has demonstrated an OLED device architecture having an efficacy over 50 lm/W that exceeds the specifications of DOE Energy Star Program Requirements for Solid State Lighting. Themore » project included work designed to optimize an OLED device, based on a stacked-OLED structure, with performance parameters of: low voltage; improved light extraction efficiency; improved internal quantum efficiency; and acceptable lifetime. The stated goal for the end of the project was delivery of an OLED device architecture, suitable for development into successful commercial products, having over 50 lum/W power efficiency and 10,000 hours lifetime at 1000 cd/m{sup 2}. During the project, Kodak developed and tested a tandem hybrid IES device made with a fluorescent blue emitter, a phosphorescent yellow emitter, and a phosphorescent red emitter in a stacked structure. The challenge was to find low voltage materials that do not absorb excessive amounts of emitted light when the extraction enhancement structure is applied. Because an extraction enhancement structure forces the emitted light to travel several times through the OLED layers before it is emitted, it exacerbates the absorption loss. A variety of ETL and HTL materials was investigated for application in the low voltage SSL device structure. Several of the materials were found to successfully yield low operating device voltages without incurring excessive absorption loss when the extraction enhancement structure was applied. An internal extraction layer comprises two essential components: a light extraction element (LEE) that does the actual extraction of emitted light and a light coupling layer (LCL) that allows the emitted light to interact with the extraction element. Modeling results show that the optical index of the LCL needs to be high, preferably higher than that of the organic layers with an n value of {approx}1.8. In addition, since the OLED structure needs to be built on top of it the LCL needs to be physically and chemically benign. As the project concluded, our focus was on the tandem hybrid device, which proved to be the more efficient architecture. Cost-efficient device fabrication will provide the next challenges with this device architecture in order to allow this architecture to be commercialized.« less

Solution processed, white emitting tandem organic light-emitting diodes with inverted device architecture.

PubMed

Höfle, Stefan; Schienle, Alexander; Bernhard, Christoph; Bruns, Michael; Lemmer, Uli; Colsmann, Alexander

2014-08-13

Fully solution processed monochromatic and white-light emitting tandem or multi-photon polymer OLEDs with an inverted device architecture have been realized by employing WO3 /PEDOT:PSS/ZnO/PEI charge carrier generation layers. The luminance of the sub-OLEDs adds up in the stacked device indicating multi-photon emission. The white OLEDs exhibit a CRI of 75. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Correlation of Device Performance and Fermi Level Shift in the Emitting Layer of Organic Light-Emitting Diodes with Amine-Based Electron Injection Layers.

PubMed

Stolz, Sebastian; Lemmer, Uli; Hernandez-Sosa, Gerardo; Mankel, Eric

2018-03-14

We investigate three amine-based polymers, polyethylenimine and two amino-functionalized polyfluorenes, as electron injection layers (EILs) in organic light-emitting diodes (OLEDs) and find correlations between the molecular structure of the polymers, the electronic alignment at the emitter/EIL interface, and the resulting device performance. X-ray photoelectron spectroscopy measurements of the emitter/EIL interface indicate that all three EIL polymers induce an upward shift of the Fermi level in the emitting layer close to the interface similar to n-type doping. The absolute value of this Fermi level shift, which can be explained by an electron transfer from the EIL polymers into the emitting layer, correlates with the number of nitrogen-containing groups in the side chains of the polymers. Whereas polyethylenimine (PEI) and one of the investigated polyfluorenes (PFCON-C) have six such groups per monomer unit, the second investigated polyfluorene (PFN) only possesses two. Consequently, we measure Fermi level shifts of 0.5-0.7 eV for PEI and PFCON-C and only 0.2 eV for PFN. As a result of these Fermi level shifts, the energetic barrier for electron injection is significantly lowered and OLEDs which comprise PEI or PFCON-C as an EIL exhibit a more than twofold higher luminous efficacy than OLEDs with PFN.

Microfluidic White Organic Light-Emitting Diode Based on Integrated Patterns of Greenish-Blue and Yellow Solvent-Free Liquid Emitters

NASA Astrophysics Data System (ADS)

Kobayashi, Naofumi; Kasahara, Takashi; Edura, Tomohiko; Oshima, Juro; Ishimatsu, Ryoichi; Tsuwaki, Miho; Imato, Toshihiko; Shoji, Shuichi; Mizuno, Jun

2015-10-01

We demonstrated a novel microfluidic white organic light-emitting diode (microfluidic WOLED) based on integrated sub-100-μm-wide microchannels. Single-μm-thick SU-8-based microchannels, which were sandwiched between indium tin oxide (ITO) anode and cathode pairs, were fabricated by photolithography and heterogeneous bonding technologies. 1-Pyrenebutyric acid 2-ethylhexyl ester (PLQ) was used as a solvent-free greenish-blue liquid emitter, while 2,8-di-tert-butyl-5,11-bis(4-tert-butylphenyl)-6,12-diphenyltetracene (TBRb)-doped PLQ was applied as a yellow liquid emitter. In order to form the liquid white light-emitting layer, the greenish-blue and yellow liquid emitters were alternately injected into the integrated microchannels. The fabricated electro-microfluidic device successfully exhibited white electroluminescence (EL) emission via simultaneous greenish-blue and yellow emissions under an applied voltage of 100 V. A white emission with Commission Internationale de l’Declairage (CIE) color coordinates of (0.40, 0.42) was also obtained; the emission corresponds to warm-white light. The proposed device has potential applications in subpixels of liquid-based microdisplays and for lighting.

Cesium lead halide perovskite quantum dot-based warm white light-emitting diodes with high color rendering index

NASA Astrophysics Data System (ADS)

Bi, Ke; Wang, Dan; Wang, Peng; Duan, Bin; Zhang, Tieqiang; Wang, Yinghui; Zhang, Hanzhuang; Zhang, Yu

2017-05-01

White light-emitting diodes (WLEDs) were fabricated by employing a combination of a commercial yellow emission Ce3+-doped Y3Al5O12 (YAG:Ce)-based phosphor and all-inorganic perovskite quantum dots pumped with blue LED chip. Perovskite quantum dot solution was used as the color conversion layer with liquid-type structure. Red-emitting materials based on cesium lead halide (CsPb(X)3) perovskite quantum dots were introduced to generate WLEDs with high efficacy and high color rendering index through compensating the red emission of the YAG:Ce phosphor-based commercialized WLEDs. The experimental results suggested that the luminous efficiency and color rendering index of the as-prepared WLED device could reach up to 84.7 lm/W and 89, respectively. The characteristics of those devices including correlated color temperature (CCT), color rendering index (CRI), and color coordinates were observed under different forward currents. The as-fabricated warm WLEDs showed excellent color stability against the increasing current, while the color coordinates shifted slightly from (0.3837, 0.3635) at 20 mA to (0.3772, 0.3592) at 120 mA and color temperature tuned from 3803 to 3953 K.

Injection and detection of a spin-polarized current in a light-emitting diode

NASA Astrophysics Data System (ADS)

Fiederling, R.; Keim, M.; Reuscher, G.; Ossau, W.; Schmidt, G.; Waag, A.; Molenkamp, L. W.

1999-12-01

The field of magnetoelectronics has been growing in practical importance in recent years. For example, devices that harness electronic spin-such as giant-magnetoresistive sensors and magnetoresistive memory cells-are now appearing on the market. In contrast, magnetoelectronic devices based on spin-polarized transport in semiconductors are at a much earlier stage of development, largely because of the lack of an efficient means of injecting spin-polarized charge. Much work has focused on the use of ferromagnetic metallic contacts, but it has proved exceedingly difficult to demonstrate polarized spin injection. More recently, two groups have reported successful spin injection from an NiFe contact, but the observed effects of the spin-polarized transport were quite small (resistance changes of less than 1%). Here we describe a different approach, in which the magnetic semiconductor BexMnyZn1-x-ySe is used as a spin aligner. We achieve injection efficiencies of 90% spin-polarized current into a non-magnetic semiconductor device. The device used in this case is a GaAs/AlGaAs light-emitting diode, and spin polarization is confirmed by the circular polarization state of the emitted light.

High-efficiency red electroluminescent device based on multishelled InP quantum dots.

PubMed

Jo, Jung-Ho; Kim, Jong-Hoon; Lee, Ki-Heon; Han, Chang-Yeol; Jang, Eun-Pyo; Do, Young Rag; Yang, Heesun

2016-09-01

We report on the synthesis of highly fluorescent red-emitting InP quantum dots (QDs) and their application to the fabrication of a high-efficiency QD-light-emitting diode (QLED). The core/shell heterostructure of the QDs is elaborately tailored toward a multishelled structure with a composition-gradient ZnSeS intermediate shell and an outer ZnS shell. Using the resulting InP/ZnSeS/ZnS QDs as an emitting layer, all-solution-processible red InP QLEDs are fabricated with a hybrid multilayered device structure having an organic hole transport layer (HTL) and an inorganic ZnO nanoparticle electron transport layer. Two HTLs of poly(9-vinlycarbazole) or poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4^'-(N-(4-sec-butylphenyl))diphenyl-amine), whose hole mobilities are different by at least three orders of magnitude, are individually applied for QLED fabrication and such HTL-dependent device performances are compared. Our best red device displays exceptional figures of merit such as a maximum luminance of 2849  cd/m², a current efficiency of 4.2  cd/A, and an external quantum efficiency of 2.5%.

Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rogers, John A.; Nuzzo, Ralph; Kim, Hoon-sik

Described herein are printable structures and methods for making, assembling and arranging electronic devices. A number of the methods described herein are useful for assembling electronic devices where one or more device components are embedded in a polymer which is patterned during the embedding process with trenches for electrical interconnects between device components. Some methods described herein are useful for assembling electronic devices by printing methods, such as by dry transfer contact printing methods. Also described herein are GaN light emitting diodes and methods for making and arranging GaN light emitting diodes, for example for display or lighting systems.

Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displays

DOEpatents

Rogers, John A; Nuzzo, Ralph; Kim, Hoon-sik; Brueckner, Eric; Park, Sang Il; Kim, Rak Hwan

2014-10-21

Described herein are printable structures and methods for making, assembling and arranging electronic devices. A number of the methods described herein are useful for assembling electronic devices where one or more device components are embedded in a polymer which is patterned during the embedding process with trenches for electrical interconnects between device components. Some methods described herein are useful for assembling electronic devices by printing methods, such as by dry transfer contact printing methods. Also described herein are GaN light emitting diodes and methods for making and arranging GaN light emitting diodes, for example for display or lighting systems.

Highly Efficient Solution-Processed Deep-Red Organic Light-Emitting Diodes Based on an Exciplex Host Composed of a Hole Transporter and a Bipolar Host.

PubMed

Huang, Manli; Jiang, Bei; Xie, Guohua; Yang, Chuluo

2017-10-19

With the aim to achieve highly efficient deep-red emission, we introduced an exciplex forming cohost, 4,4',4″-tris(3-methylphenylphenylamino)triphenylamine (m-MTDATA): 2,5-bis(2-(9H-carbazol-9-yl)phenyl)-1,3,4-oxadiazole (o-CzOXD) (1:1). Due to the efficient triplet up-conversion processes upon the exciplex forming cohost, excellent performances of the devices were achieved with deep-red emission. Using the heteroleptic iridium complexes as the guest dopants, the solution-processed deep-red phosphorescent organic light-emitting diodes (PhOLEDs) with the iridium(III) bis(6-(4-(tert-butyl)phenyl)phenanthridine)acetylacetonate [(TP-BQ) 2 Ir(acac)]-based phosphorescent emitter exhibited an electroluminescent peak at 656 nm and a maximum external quantum efficiency (EQE) of 11.9%, which is 6.6 times that of the device based on the guest emitter doped in the polymer-based cohost. The unique exciplex with a typical hole transporter and a bipolar material is ideal and universal for hosting the red PhOLEDs and tremendously improves the device performances.

Characterizations of low-temperature electroluminescence from ZnO nanowire light-emitting arrays on the p-GaN layer.

PubMed

Lu, Tzu-Chun; Ke, Min-Yung; Yang, Sheng-Chieh; Cheng, Yun-Wei; Chen, Liang-Yi; Lin, Guan-Jhong; Lu, Yu-Hsin; He, Jr-Hau; Kuo, Hao-Chung; Huang, JianJang

2010-12-15

Low-temperature electroluminescence from ZnO nanowire light-emitting arrays is reported. By inserting a thin MgO current blocking layer in between ZnO nanowire and p-GaN, high-purity UV light emission at wavelength 398 nm was obtained. As the temperature is decreased, contrary to the typical GaN-based light emitting diodes, our device shows a decrease of optical output intensity. The results are associated with various carrier tunneling processes and frozen MgO defects.

Naturally formed graded junction for organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Shao, Yan; Yang, Yang

2003-09-01

In this letter, we report naturally-formed graded junctions (NFGJ) for organic light-emitting diodes (OLEDs). These junctions are fabricated using single thermal evaporation boat loaded with uniformly mixed charge transport and light-emitting materials. Upon heating, materials sublimate sequentially according to their vaporizing temperatures forming the graded junction. Two kinds of graded structures, sharp and shallow graded junctions, can be formed based on the thermal properties of the selected materials. The NFGJ OLEDs have shown excellent performance in both brightness and lifetime compared with heterojunction devices.

Unusual near-white electroluminescence of light emitting diodes based on saddle-shaped porphyrins.

PubMed

Shahroosvand, Hashem; Zakavi, Saeed; Sousaraei, Ahmad; Mohajerani, Ezeddin; Mahmoudi, Malek

2015-05-14

In contrast to the red electroluminescence emission frequently observed in porphyrins based OLED devices, the present devices exhibit a nearly white emission with greenish yellow, yellowish green and blue green hues in the case of Fe(II)(TCPPBr6) (TCPPBr6 = β-hexabromo-meso-tetrakis-(4-phenyl carboxyl) porphyrinato), Zn(II)(TPPBr6) and Co(II)(TPPBr6), respectively.

Numerical simulation of optical and electronic properties for multilayer organic light-emitting diodes and its application in engineering education

NASA Astrophysics Data System (ADS)

Chang, Shu-Hsuan; Chang, Yung-Cheng; Yang, Cheng-Hong; Chen, Jun-Rong; Kuo, Yen-Kuang

2006-02-01

Organic light-emitting diodes (OLEDs) have been extensively developed in the past few years. The OLED displays have advantages over other displays, such as CRT, LCD, and PDP in thickness, weight, brightness, response time, viewing angle, contrast, driving power, flexibility, and capability of self-emission. In this work, the optical and electronic properties of multilayer OLED devices are numerically studied with an APSYS (Advanced Physical Model of Semiconductor Devices) simulation program. Specifically, the emission and absorption spectra of the Alq 3, DCM, PBD, and SA light-emitting layers, and energy band diagrams, electron-hole recombination rates, and current-voltage characteristics of the simulated OLED devices, typically with a multilayer structure of metal/Alq 3/EML/TPD/ITO constructed by Lim et al., are investigated and compared to the experimental results. The physical models utilized in this work are similar to those presented by Ruhstaller et al. and Hoffmann et al. The simulated results indicate that the emission spectra of the Alq 3, DCM, PBD, and SA light-emitting layers obtained in this study are in good agreement with those obtained experimentally by Zugang et al. Optimization of the optical and electronic performance of the multilayer OLED devices are attempted. In order to further promote the research results, the whole numerical simulation process for optimizing the design of OLED devices has been applied to a project-based course of OLED device design to enhance the students' skills in photonics device design at the Graduate Institute of Photonics of National Changhua University of Education in Taiwan. In the meantime, the effectiveness of the course has been proved by various assessments. The application of the results is a useful point of reference for the research on photonics device design and engineering education. Therefore, it proffers a synthetic effect between innovation and practical application.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chang, Y. L., E-mail: yilu.chang@mail.utoronto.ca; Gong, S., E-mail: sgong@chem.utoronto.ca; White, R.

We have demonstrated high-efficiency greenish-blue phosphorescent organic light-emitting diodes (PHOLEDs) based on a dimesitylboryl-functionalized C^N chelate Pt(II) phosphor, Pt(m-Bptrz)(t-Bu-pytrz-Me). Using a high triplet energy platform and optimized double emissive zone device architecture results in greenish-blue PHOLEDs that exhibit an external quantum efficiency of 24.0% and a power efficiency of 55.8 lm/W. This record high performance is comparable with that of the state-of-the-art Ir-based sky-blue organic light-emitting diodes.

Simplified nonplanar wafer bonding for heterogeneous device integration

NASA Astrophysics Data System (ADS)

Geske, Jon; Bowers, John E.; Riley, Anton

2004-07-01

We demonstrate a simplified nonplanar wafer bonding technique for heterogeneous device integration. The improved technique can be used to laterally integrate dissimilar semiconductor device structures on a lattice-mismatched substrate. Using the technique, two different InP-based vertical-cavity surface-emitting laser active regions have been integrated onto GaAs without compromising the quality of the photoluminescence. Experimental and numerical simulation results are presented.

Defining the light emitting area for displays in the unipolar regime of highly efficient light emitting transistors

PubMed Central

Ullah, Mujeeb; Armin, Ardalan; Tandy, Kristen; Yambem, Soniya D.; Burn, Paul L.; Meredith, Paul; Namdas, Ebinazar B.

2015-01-01

Light-emitting field effect transistors (LEFETs) are an emerging class of multifunctional optoelectronic devices. It combines the light emitting function of an OLED with the switching function of a transistor in a single device architecture. The dual functionality of LEFETs has the potential applications in active matrix displays. However, the key problem of existing LEFETs thus far has been their low EQEs at high brightness, poor ON/OFF and poorly defined light emitting area - a thin emissive zone at the edge of the electrodes. Here we report heterostructure LEFETs based on solution processed unipolar charge transport and an emissive polymer that have an EQE of up to 1% at a brightness of 1350 cd/m2, ON/OFF ratio > 104 and a well-defined light emitting zone suitable for display pixel design. We show that a non-planar hole-injecting electrode combined with a semi-transparent electron-injecting electrode enables to achieve high EQE at high brightness and high ON/OFF ratio. Furthermore, we demonstrate that heterostructure LEFETs have a better frequency response (fcut-off = 2.6 kHz) compared to single layer LEFETs. The results presented here therefore are a major step along the pathway towards the realization of LEFETs for display applications. PMID:25743444

InGaAsN/GaAs Heterostructures for Long-Wavelength Light-Emitting Devices

DTIC Science & Technology

2000-06-23

vertical cavity surface emitting lasers ( VCSELs ) on GaAs is expected to be possible by... molecular beam epitaxy using an RF plasma-source. Broad area and ridge waveguide laser structures based on such QWs exhibit performance that can...work with GaAs/AlAs DBR-mirrors is expected to lead to novel vertical cavity lasers for optical fiber communication systems. Acknowledgement

Highly Efficient White Organic Light-Emitting Diodes with Ultrathin Emissive Layers and a Spacer-Free Structure

PubMed Central

Wu, Shengfan; Li, Sihua; Sun, Qi; Huang, Chenchao; Fung, Man-Keung

2016-01-01

Ultrathin emissive layers (UEMLs) of phosphorescent materials with a layer thickness of less than 0.3 nm were introduced for high-efficiency organic light-emitting diodes (OLEDs). All the UEMLs for white OLEDs can be prepared without the use of interlayers or spacers. Compared with devices fabricated with interlayers inserted in-between the UEMLs, our spacer-free structure not only significantly improves device efficiency, but also simplifies the fabrication process, thus it has a great potential in lowering the cost of OLED panels. In addition, its spacer-free structure decreases the number of interfaces which often introduce unnecessary energy barriers in these devices. In the present work, UEMLs of red, green and blue-emitting phosphorescent materials and yellow and blue phosphorescent emitters are utilized for the demonstration of spacer-free white OLEDs. Upon optimization of the device structure, we demonstrated spacer-free and simple-structured white-emitting OLEDs with a good device performance. The current and power efficiencies of our white-emitting devices are as high as 56.0 cd/A and 55.5 lm/W, respectively. These efficiencies are the highest ever reported for OLEDs fabricated with the UEML approach. PMID:27170543

Highly Efficient White Organic Light-Emitting Diodes with Ultrathin Emissive Layers and a Spacer-Free Structure.

PubMed

Wu, Shengfan; Li, Sihua; Sun, Qi; Huang, Chenchao; Fung, Man-Keung

2016-05-12

Ultrathin emissive layers (UEMLs) of phosphorescent materials with a layer thickness of less than 0.3 nm were introduced for high-efficiency organic light-emitting diodes (OLEDs). All the UEMLs for white OLEDs can be prepared without the use of interlayers or spacers. Compared with devices fabricated with interlayers inserted in-between the UEMLs, our spacer-free structure not only significantly improves device efficiency, but also simplifies the fabrication process, thus it has a great potential in lowering the cost of OLED panels. In addition, its spacer-free structure decreases the number of interfaces which often introduce unnecessary energy barriers in these devices. In the present work, UEMLs of red, green and blue-emitting phosphorescent materials and yellow and blue phosphorescent emitters are utilized for the demonstration of spacer-free white OLEDs. Upon optimization of the device structure, we demonstrated spacer-free and simple-structured white-emitting OLEDs with a good device performance. The current and power efficiencies of our white-emitting devices are as high as 56.0 cd/A and 55.5 lm/W, respectively. These efficiencies are the highest ever reported for OLEDs fabricated with the UEML approach.

Highly Efficient White Organic Light-Emitting Diodes with Ultrathin Emissive Layers and a Spacer-Free Structure

NASA Astrophysics Data System (ADS)

Wu, Shengfan; Li, Sihua; Sun, Qi; Huang, Chenchao; Fung, Man-Keung

2016-05-01

Ultrathin emissive layers (UEMLs) of phosphorescent materials with a layer thickness of less than 0.3 nm were introduced for high-efficiency organic light-emitting diodes (OLEDs). All the UEMLs for white OLEDs can be prepared without the use of interlayers or spacers. Compared with devices fabricated with interlayers inserted in-between the UEMLs, our spacer-free structure not only significantly improves device efficiency, but also simplifies the fabrication process, thus it has a great potential in lowering the cost of OLED panels. In addition, its spacer-free structure decreases the number of interfaces which often introduce unnecessary energy barriers in these devices. In the present work, UEMLs of red, green and blue-emitting phosphorescent materials and yellow and blue phosphorescent emitters are utilized for the demonstration of spacer-free white OLEDs. Upon optimization of the device structure, we demonstrated spacer-free and simple-structured white-emitting OLEDs with a good device performance. The current and power efficiencies of our white-emitting devices are as high as 56.0 cd/A and 55.5 lm/W, respectively. These efficiencies are the highest ever reported for OLEDs fabricated with the UEML approach.

White organic light-emitting diodes based on doped and ultrathin Rubrene layer

NASA Astrophysics Data System (ADS)

Li, Yi; Jiang, Yadong; Wen, Wen; Yu, Junsheng

2010-10-01

Based on a yellow fluorescent dye of 5, 6, 11, 12-tetraphenylnaphthacene (Rubrene), WOLEDs were fabricated, with doping structure and ultrathin layer structure utilized in the devices. By doping Rubrene into blue-emitting N,N'-bis-(1- naphthyl)-N,N'-biphenyl-1,1'-biphenyl-4,4'-diamine (NPB), the device with a structure of indium-tin-oxide (ITO)/NPB (40 nm)/NPB:Rubrene (0.25 wt%, 7 nm)/2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) (30 nm)/Mg:Ag exhibited a warm white light with Commissions Internationale De L'Eclairage (CIE) coordinates of (0.38, 0.41) at 12 V. The electroluminescent spectrum of the OLED consisted of blue and yellow fluorescent emissions, the intensity of blue emission increased gradually relative to the orange emission with increasing voltage. This is mainly due to the recombination zone shifted towards the anode side as the transmission rate of electrons grows faster than that of holes under higher bias voltage. A maximum luminance of 7300 cd/m2 and a maximum power efficiency of 0.57 lm/W were achieved. Comparatively, by utilizing ultrathin dopant layer, the device with a structure of ITO/NPB (40 nm)/Rubrene (0.3 nm)/NPB (7 nm)/BCP (30 nm)/Mg:Ag achieved a low turn-on voltage of 3 V and a more stable white light. The peaks of EL spectra located at 430 and 560 nm corresponding to the CIE coordinates of (0.32, 0.32) under bias voltage ranging from 5 to 15 V. A maximum luminance of 5630 cd/m2 and a maximum power efficiency of 0.6 lm/W were achieved. The balanced spectra were attributed to the stable confining of charge carriers and exciton by the thin emitting layers. Hence, with simple device structure and fabricating process, the device with ultrathin layer achieved low turn-on voltage, stable white light emitting and higher power efficiency.

Integration of photoactive and electroactive components with vertical cavity surface emitting lasers

DOEpatents

Bryan, R.P.; Esherick, P.; Jewell, J.L.; Lear, K.L.; Olbright, G.R.

1997-04-29

A monolithically integrated optoelectronic device is provided which integrates a vertical cavity surface emitting laser and either a photosensitive or an electrosensitive device either as input or output to the vertical cavity surface emitting laser either in parallel or series connection. Both vertical and side-by-side arrangements are disclosed, and optical and electronic feedback means are provided. Arrays of these devices can be configured to enable optical computing and neural network applications. 9 figs.

Integration of photoactive and electroactive components with vertical cavity surface emitting lasers

DOEpatents

Bryan, Robert P.; Esherick, Peter; Jewell, Jack L.; Lear, Kevin L.; Olbright, Gregory R.

1997-01-01

A monolithically integrated optoelectronic device is provided which integrates a vertical cavity surface emitting laser and either a photosensitive or an electrosensitive device either as input or output to the vertical cavity surface emitting laser either in parallel or series connection. Both vertical and side-by-side arrangements are disclosed, and optical and electronic feedback means are provided. Arrays of these devices can be configured to enable optical computing and neural network applications.

Method to generate high efficient devices which emit high quality light for illumination

DOEpatents

Krummacher, Benjamin C.; Mathai, Mathew; Choong, Vi-En; Choulis, Stelios A.

2009-06-30

An electroluminescent apparatus includes an OLED device emitting light in the blue and green spectrums, and at least one down conversion layer. The down conversion layer absorbs at least part of the green spectrum light and emits light in at least one of the orange spectra and red spectra.

Light emitting device having peripheral emissive region

DOEpatents

Forrest, Stephen R

2013-05-28

Light emitting devices are provided that include one or more OLEDs disposed only on a peripheral region of the substrate. An OLED may be disposed only on a peripheral region of a substantially transparent substrate and configured to emit light into the substrate. Another surface of the substrate may be roughened or include other features to outcouple light from the substrate. The edges of the substrate may be beveled and/or reflective. The area of the OLED(s) may be relatively small compared to the substrate surface area through which light is emitted from the device. One or more OLEDs also or alternatively may be disposed on an edge of the substrate about perpendicular to the surface of the substrate through which light is emitted, such that they emit light into the substrate. A mode expanding region may be included between each such OLED and the substrate.

Compact Quantum Random Number Generator with Silicon Nanocrystals Light Emitting Device Coupled to a Silicon Photomultiplier

NASA Astrophysics Data System (ADS)

Bisadi, Zahra; Acerbi, Fabio; Fontana, Giorgio; Zorzi, Nicola; Piemonte, Claudio; Pucker, Georg; Pavesi, Lorenzo

2018-02-01

A small-sized photonic quantum random number generator, easy to be implemented in small electronic devices for secure data encryption and other applications, is highly demanding nowadays. Here, we propose a compact configuration with Silicon nanocrystals large area light emitting device (LED) coupled to a Silicon photomultiplier to generate random numbers. The random number generation methodology is based on the photon arrival time and is robust against the non-idealities of the detector and the source of quantum entropy. The raw data show high quality of randomness and pass all the statistical tests in national institute of standards and technology tests (NIST) suite without a post-processing algorithm. The highest bit rate is 0.5 Mbps with the efficiency of 4 bits per detected photon.

Wearable Electrocardiogram Monitor Using Carbon Nanotube Electronics and Color-Tunable Organic Light-Emitting Diodes.

PubMed

Koo, Ja Hoon; Jeong, Seongjin; Shim, Hyung Joon; Son, Donghee; Kim, Jaemin; Kim, Dong Chan; Choi, Suji; Hong, Jong-In; Kim, Dae-Hyeong

2017-10-24

With the rapid advances in wearable electronics, the research on carbon-based and/or organic materials and devices has become increasingly important, owing to their advantages in terms of cost, weight, and mechanical deformability. Here, we report an effective material and device design for an integrative wearable cardiac monitor based on carbon nanotube (CNT) electronics and voltage-dependent color-tunable organic light-emitting diodes (CTOLEDs). A p-MOS inverter based on four CNT transistors allows high amplification and thereby successful acquisition of the electrocardiogram (ECG) signals. In the CTOLEDs, an ultrathin exciton block layer of bis[2-(diphenylphosphino)phenyl]ether oxide is used to manipulate the balance of charges between two adjacent emission layers, bis[2-(4,6-difluorophenyl)pyridinato-C 2 ,N](picolinato)iridium(III) and bis(2-phenylquinolyl-N,C(2'))iridium(acetylacetonate), which thereby produces different colors with respect to applied voltages. The ultrathin nature of the fabricated devices supports extreme wearability and conformal integration of the sensor on human skin. The wearable CTOLEDs integrated with CNT electronics are used to display human ECG changes in real-time using tunable colors. These materials and device strategies provide opportunities for next generation wearable health indicators.

Highly efficient and stable white organic light emitting diode base on double recombination zones of phosphorescent blue/orange emitters.

PubMed

Lee, Seok Jae; Koo, Ja Ryong; Lim, Dong Hwan; Park, Hye Rim; Kim, Young Kwan; Ha, Yunkyoung

2011-08-01

We demonstrated efficient and stable white phosphorescent organic light-emitting diodes (OLEDs) with double-emitting layers (D-EMLs), which were comprised of two emissive layers with a hole transport-type host of N,N'-dicarbazolyl-3,5-benzene (mCP) and a electron transport-type host of 2,2',2"-(1,3,5-benzenetryl)tris(1-phenyl)-1H-benzimidazol (TPBi) with blue/orange emitters, respectively. We fabricated two type white devices with single emitting layer (S-EML) and D-EML of orange emitter, maintaining double recombination zone of blue emitter. In addition, the device architecture was developed to confine excitons inside the D-EMLs and to manage triplet excitons by controlling the charge injection. As a result, light-emitting performances of white OLED with D-EMLs were improved and showed the steady CIE coordinates compared to that with S-EML of orange emitter, which demonstrated the maximum luminous efficiency and external quantum efficiency were 21.38 cd/A and 11.09%. It also showed the stable white emission with CIE(x,y) coordinates from (x = 0.36, y = 0.37) at 6 V to (x = 0.33, y = 0.38) at 12 V.

Safe Eats - Eating Out and Bringing In

MedlinePlus

... Devices Radiation-Emitting Products Vaccines, Blood & Biologics Animal & Veterinary Cosmetics Tobacco Products Food Home Food Resources for ... Devices Radiation-Emitting Products Vaccines, Blood & Biologics Animal & Veterinary Cosmetics Tobacco Products

Fabrication of a white electroluminescent device based on bilayered yellow and blue quantum dots.

PubMed

Kim, Jong-Hoon; Lee, Ki-Heon; Kang, Hee-Don; Park, Byoungnam; Hwang, Jun Yeon; Jang, Ho Seong; Do, Young Rag; Yang, Heesun

2015-03-12

Until now most work on colloidal quantum dot-light-emitting diodes (QLEDs) has been focused on the improvement of the electroluminescent (EL) performance of monochromatic devices, and multi-colored white QLEDs comprising more than one type of QD emitter have been rarely investigated. To demonstrate a white EL as a result of color mixing between blue and yellow, herein a unique combination of two dissimilar QDs of blue- CdZnS/ZnS plus a yellow-emitting Cu-In-S (CIS)/ZnS is used for the formation of the emitting layer (EML) of a multilayered QLED. First, the QLED consisting of a single EML randomly mixed with two QDs is fabricated, however, its EL is dominated by blue emission with the contribution of yellow emission substantially weaker. Thus, another EML configuration is devised in the form of a QD bilayer with two stacking sequences of CdZnS/ZnS//CIS/ZnS QD and vice versa. The QLED with the former stacking sequence shows an overwhelming contribution of blue EL, similar to the mixed QD EML-based device. Upon applying the oppositely stacked QD bilayer of CIS/ZnS//CdZnS/ZnS, however, a bicolored white EL can be successfully achieved by means of the effective extension of the radiative excitonic recombination zone throughout both QD EML regions. Such QD EML configuration-dependent EL results, which are discussed primarily using the proposed device energy level diagram, strongly suggest that the positional design of individual QD emitters is a critical factor for the realization of multicolored, white emissive devices.

Conformable large-area position-sensitive photodetectors based on luminescence-collecting silicone waveguides

NASA Astrophysics Data System (ADS)

Bartu, Petr; Koeppe, Robert; Arnold, Nikita; Neulinger, Anton; Fallon, Lisa; Bauer, Siegfried

2010-06-01

Position sensitive detection schemes based on the lateral photoeffect rely on inorganic semiconductors. Such position sensitive devices (PSDs) are reliable and robust, but preparation with large active areas is expensive and use on curved substrates is impossible. Here we present a novel route for the fabrication of conformable PSDs which allows easy preparation on large areas, and use on curved surfaces. Our device is based on stretchable silicone waveguides with embedded fluorescent dyes, used in conjunction with small silicon photodiodes. Impinging laser light (e.g., from a laser pointer) is absorbed by the dye in the PSD and re-emitted as fluorescence light at a larger wavelength. Due to the isotropic emission from the fluorescent dye molecules, most of the re-emitted light is coupled into the planar silicone waveguide and directed to the edges of the device. Here the light signals are detected via embedded small silicon photodiodes arranged in a regular pattern. Using a mathematical algorithm derived by extensive using of models from global positioning system (GPS) systems and human activity monitoring, the position of light spots is easily calculated. Additionally, the device shows high durability against mechanical stress, when clamped in an uniaxial stretcher and mechanically loaded up to 15% strain. The ease of fabrication, conformability, and durability of the device suggests its use as interface devices and as sensor skin for future robots.

GaN-based superluminescent diodes with long lifetime

NASA Astrophysics Data System (ADS)

Castiglia, A.; Rossetti, M.; Matuschek, N.; Rezzonico, R.; Duelk, M.; Vélez, C.; Carlin, J.-F.; Grandjean, N.

2016-02-01

We report on the reliability of GaN-based super-luminescent light emitting diodes (SLEDs) emitting at a wavelength of 405 nm. We show that the Mg doping level in the p-type layers has an impact on both the device electro-optical characteristics and their reliability. Optimized doping levels allow decreasing the operating voltage on single-mode devices from more than 6 V to less than 5 V for an injection current of 100 mA. Furthermore, maximum output powers as high as 350 mW (for an injection current of 500 mA) have been achieved in continuous-wave operation (CW) at room temperature. Modules with standard and optimized p-type layers were finally tested in terms of lifetime, at a constant output power of 10 mW, in CW operation and at a case temperature of 25 °C. The modules with non-optimized p-type doping showed a fast and remarkable increase in the drive current during the first hundreds of hours together with an increase of the device series resistance. No degradation of the electrical characteristics was observed over 2000 h on devices with optimized p-type layers. The estimated lifetime for those devices was longer than 5000 h.

Visible scintillation photodetector device incorporating chalcopyrite semiconductor crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stowe, Ashley C.; Burger, Arnold

2017-04-04

A photodetector device, including: a scintillator material operable for receiving incident radiation and emitting photons in response; a photodetector material coupled to the scintillator material operable for receiving the photons emitted by the scintillator material and generating a current in response, wherein the photodetector material includes a chalcopyrite semiconductor crystal; and a circuit coupled to the photodetector material operable for characterizing the incident radiation based on the current generated by the photodetector material. Optionally, the scintillator material includes a gamma scintillator material and the incident radiation received includes gamma rays. Optionally, the photodetector material is further operable for receiving thermalmore » neutrons and generating a current in response. The circuit is further operable for characterizing the thermal neutrons based on the current generated by the photodetector material.« less

Phosphorescent Organic Light-Emitting Devices: Working Principle and Iridium Based Emitter Materials

PubMed Central

Kappaun, Stefan; Slugovc, Christian; List, Emil J. W.

2008-01-01

Even though organic light-emitting device (OLED) technology has evolved to a point where it is now an important competitor to liquid crystal displays (LCDs), further scientific efforts devoted to the design, engineering and fabrication of OLEDs are required for complete commercialization of this technology. Along these lines, the present work reviews the essentials of OLED technology putting special focus on the general working principle of single and multilayer OLEDs, fluorescent and phosphorescent emitter materials as well as transfer processes in host materials doped with phosphorescent dyes. Moreover, as a prototypical example of phosphorescent emitter materials, a brief discussion of homo- and heteroleptic iridium(III) complexes is enclosed concentrating on their synthesis, photophysical properties and approaches for realizing iridium based phosphorescent polymers. PMID:19325819

Recipient luminophoric mediums having narrow spectrum luminescent materials and related semiconductor light emitting devices and methods

DOEpatents

LeToquin, Ronan P; Tong, Tao; Glass, Robert C

2014-12-30

Light emitting devices include a light emitting diode ("LED") and a recipient luminophoric medium that is configured to down-convert at least some of the light emitted by the LED. In some embodiments, the recipient luminophoric medium includes a first broad-spectrum luminescent material and a narrow-spectrum luminescent material. The broad-spectrum luminescent material may down-convert radiation emitted by the LED to radiation having a peak wavelength in the red color range. The narrow-spectrum luminescent material may also down-convert radiation emitted by the LED into the cyan, green or red color range.

Influence of emissive layer thickness on electrical characteristics of polyfluorene copolymer based polymer light emitting diodes

NASA Astrophysics Data System (ADS)

Das, D.; Gopikrishna, P.; Singh, A.; Dey, A.; Iyer, P. K.

2016-04-01

Polymer light emitting diodes (PLEDs) with a device configuration of ITO/PEDOT:PSS/PFONPN01 [Poly [2,7-(9,9’-dioctylfluorene)-co-N-phenyl-1,8-naphthalimide (99:01)]/LiF/Al have been fabricated by varying the emissive layer (EML) thickness (40/65/80/130 nm) and the influence of EML thickness on the electrical characteristics of PLED has been studied. PLED can be modelled as a simple combination of resistors and capacitors. The impedance spectroscopy analysis showed that the devices with different EML thickness had different values of parallel resistance (RP) and the parallel capacitance (CP). The impedance of the devices is found to increase with increasing EML thickness resulting in an increase in the driving voltage. The device with an emissive layer thickness of 80nm, spin coated from a solution of concentration 15 mg/mL is found to give the best device performance with a maximum brightness value of 5226 cd/m2.

White-light-emitting organic electroluminescent devices based on interlayer sequential energy transfer

NASA Astrophysics Data System (ADS)

Deshpande, R. S.; Bulović, V.; Forrest, S. R.

1999-08-01

We demonstrate efficient, molecular organic white-light-emitting devices using vacuum-deposited thin films of red luminescent [2-methyl-6-[2-(2,3,6,7-tetrahydro-1H, 5H-benzo [ij] quinolizin-9-yl) ethenyl]-4H-pyran-4-ylidene] propane-dinitrile (DCM2), doped into blue-emitting 4, 4' bis [N-1-napthyl-N-phenyl-amino]biphenyl (α-NPD), and green-emitting tris-(8-hydroxyquinolinato) aluminum(III) (AlQ3). The luminescent layers are separated by a hole-blocking layer of 2,9-dimethyl, 4,7-diphenyl, 1,10-phenanthroline (BCP), whose thickness is on the order of a typical Förster transfer radius of 30-40 Å. Excitons formed on α-NPD sequentially transfer their energy via a Förster mechanism to AlQ3 across the BCP layer, and from AlQ3 to DCM2. This interlayer sequential energy transfer results in partial excitation of all three molecular species, thereby producing white light emission. The thickness of the blocking layer and the concentration of DCM2 in α-NPD permit the tuning of the device spectrum to achieve a balanced white emission with Commission Internationale d'Eclairage chromaticity coordinates of (0.33, 0.33). The spectrum is largely insensitive to the drive current, and the devices have a maximum luminance of 13 500 cd/m2. At a luminance of 100 cd/m2, the quantum and power efficiencies are 0.5% and 0.35 lm/W, respectively.

Mobility balance in the light-emitting layer governs the polaron accumulation and operational stability of organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Kim, Jae-Min; Lee, Chang-Heon; Kim, Jang-Joo

2017-11-01

Organic light-emitting diode (OLED) displays are lighter and more flexible, have a wider color gamut, and consume less power than conventional displays. Stable materials and the structural design of the device are important for OLED longevity. Control of charge transport and accumulation in the device is particularly important because the interaction of excitons and polarons results in material degradation. This research investigated the charge dynamics of OLEDs experimentally and by drift-diffusion modeling. Parallel capacitance-voltage measurements of devices provided knowledge of charge behavior at different driving voltages. A comparison of exciplex-forming co-host and single host structures established that the mobility balance in the emitting layers determined the amount of accumulated polarons in those layers. Consequently, an exciplex-forming co-host provides a superior structure in terms of device lifetime and efficiency because of its well-balanced mobility. Minimizing polaron accumulation is key to achieving long OLED device lifetimes. This is a crucial aspect of device physics that must be considered in the device design structure.

Ultrahigh-efficiency solution-processed simplified small-molecule organic light-emitting diodes using universal host materials

PubMed Central

Han, Tae-Hee; Choi, Mi-Ri; Jeon, Chan-Woo; Kim, Yun-Hi; Kwon, Soon-Ki; Lee, Tae-Woo

2016-01-01

Although solution processing of small-molecule organic light-emitting diodes (OLEDs) has been considered as a promising alternative to standard vacuum deposition requiring high material and processing cost, the devices have suffered from low luminous efficiency and difficulty of multilayer solution processing. Therefore, high efficiency should be achieved in simple-structured small-molecule OLEDs fabricated using a solution process. We report very efficient solution-processed simple-structured small-molecule OLEDs that use novel universal electron-transporting host materials based on tetraphenylsilane with pyridine moieties. These materials have wide band gaps, high triplet energy levels, and good solution processabilities; they provide balanced charge transport in a mixed-host emitting layer. Orange-red (~97.5 cd/A, ~35.5% photons per electron), green (~101.5 cd/A, ~29.0% photons per electron), and white (~74.2 cd/A, ~28.5% photons per electron) phosphorescent OLEDs exhibited the highest recorded electroluminescent efficiencies of solution-processed OLEDs reported to date. We also demonstrate a solution-processed flexible solid-state lighting device as a potential application of our devices. PMID:27819053

Portable, universal, and visual ion sensing platform based on the light emitting diode-based self-referencing-ion selective field-effect transistor.

PubMed

Zhang, Xiaowei; Han, Yanchao; Li, Jing; Zhang, Libing; Jia, Xiaofang; Wang, Erkang

2014-02-04

In this work, a novel and universal ion sensing platform was presented, which enables the visual detection of various ions with high sensitivity and selectivity. Coaxial potential signals (millivolt-scale) of the sample from the self-referencing (SR) ion selective chip can be transferred into the ad620-based amplifier with an output of volt-scale potentials. The amplified voltage is high enough to drive a light emitting diode (LED), which can be used as an amplifier and indicator to report the sample information. With this double amplification device (light emitting diode-based self-referencing-ion selective field-effect transistor, LED-SR-ISFET), a tiny change of the sample concentration can be observed with a distinguishable variation of LED brightness by visual inspection. This LED-based luminescent platform provided a facile, low-cost, and rapid sensing strategy without the need of additional expensive chemiluminescence reagent and instruments. Moreover, the SR mode also endows this device excellent stability and reliability. With this innovative design, sensitive determination of K(+), H(+), and Cl(-) by the naked eye was achieved. It should also be noticed that this sensing strategy can easily be extended to other ions (or molecules) by simply integrating the corresponding ion (or molecule) selective electrode.

Stacked white OLED having separate red, green and blue sub-elements

DOEpatents

Forrest, Stephen; Qi, Xiangfei; Slootsky, Michael

2015-06-23

The present invention relates to efficient organic light emitting devices (OLEDs). More specifically, the present invention relates to white-emitting OLEDs, or WOLEDs. The devices of the present invention employ three emissive sub-elements, typically emitting red, green and blue, to sufficiently cover the visible spectrum. The sub-elements are separated by charge generating layers.

Stacked white OLED having separate red, green and blue sub-elements

DOE Office of Scientific and Technical Information (OSTI.GOV)

Forrest, Stephen; Qi, Xiangfei; Slootsky, Michael

The present invention relates to efficient organic light emitting devices (OLEDs). More specifically, the present invention relates to white-emitting OLEDs, or WOLEDs. The devices of the present invention employ three emissive sub-elements, typically emitting red, green and blue, to sufficiently cover the visible spectrum. The sub-elements are separated by charge generating layers.

Response of adult mosquitoes to light emitting diodes placed in resting boxes and in the field.

USDA-ARS?s Scientific Manuscript database

Resting boxes are passive devices used to attract and capture mosquitoes seeking shelter. Increasing the attractiveness of these devices could improve their effectiveness. Light emitting diodes (LEDs) can be attractive to mosquitoes when used together with other trapping devices. Therefore restin...

An electron transporting unit linked multifunctional Ir(III) complex: a promising strategy to improve the performance of solution-processed phosphorescent organic light-emitting diodes.

PubMed

Giridhar, Thota; Saravanan, Chinnusamy; Cho, Woosum; Park, Young Geun; Lee, Jin Yong; Jin, Sung-Ho

2014-04-18

An oxadiazole based electron transporting (ET) unit was glued to the heteroleptic Ir(III) complex (TPQIr-ET) and used as a dopant for phosphorescent organic light-emitting diodes (PhOLEDs). It shows superior device performance than the dopant without the ET unit (TPQIr) due to the balanced charge carrier injection by the ET unit.

Direct Growth of III-Nitride Nanowire-Based Yellow Light-Emitting Diode on Amorphous Quartz Using Thin Ti Interlayer

NASA Astrophysics Data System (ADS)

Prabaswara, Aditya; Min, Jung-Wook; Zhao, Chao; Janjua, Bilal; Zhang, Daliang; Albadri, Abdulrahman M.; Alyamani, Ahmed Y.; Ng, Tien Khee; Ooi, Boon S.

2018-02-01

Consumer electronics have increasingly relied on ultra-thin glass screen due to its transparency, scalability, and cost. In particular, display technology relies on integrating light-emitting diodes with display panel as a source for backlighting. In this study, we undertook the challenge of integrating light emitters onto amorphous quartz by demonstrating the direct growth and fabrication of a III-nitride nanowire-based light-emitting diode. The proof-of-concept device exhibits a low turn-on voltage of 2.6 V, on an amorphous quartz substrate. We achieved 40% transparency across the visible wavelength while maintaining electrical conductivity by employing a TiN/Ti interlayer on quartz as a translucent conducting layer. The nanowire-on-quartz LED emits a broad linewidth spectrum of light centered at true yellow color ( 590 nm), an important wavelength bridging the green-gap in solid-state lighting technology, with significantly less strain and dislocations compared to conventional planar quantum well nitride structures. Our endeavor highlighted the feasibility of fabricating III-nitride optoelectronic device on a scalable amorphous substrate through facile growth and fabrication steps. For practical demonstration, we demonstrated tunable correlated color temperature white light, leveraging on the broadly tunable nanowire spectral characteristics across red-amber-yellow color regime.

Blue-light emitting electrochemical cells comprising pyrene-imidazole derivatives

NASA Astrophysics Data System (ADS)

Lee, Hyeonji; Sunesh, Chozhidakath Damodharan; Subeesh, Madayanad Suresh; Choe, Youngson

2018-04-01

Light-emitting electrochemical cells (LECs), the next-generation lighting sources are the potential replacements for organic light-emitting diodes (OLEDs). In recent years, organic small molecules (SMs) have established the applicability in solid-state lighting, and considered as prospective active materials for LECs with higher device performance. Here, we describe the synthesis of pyrene-imidazole based SMs, PYR1, and PYR2 that differ by one pyrene unit and their characterization by various spectroscopic methods. To investigate the thermal, photophysical, and electrochemical properties of the two synthesized compounds, we performed thermogravimetric, UV-visible, photoluminescence (PL), and voltammetric measurements. The photoluminescence (PL) emission spectra of PYR1 and PYR2 measured in the acetonitrile solution, where PYR1 and PYR2 emit in the blue spectral region with peaks aligned at 383 nm and 389 nm, respectively. The fabricated LEC devices exhibited broader electroluminescence (EL) spectra with a significant red shift of the emission maxima to 446 nm and 487 nm, with CIE coordinates of (0.17, 0.18) and (0.18, 0.25) for PYR1 and PYR2, respectively. The LECs based on PYR1 and PYR2 produced maximum brightness values of 180 and 72 cd m-2 and current densities of 55 and 27 mA cm-2, respectively.

Direct Growth of III-Nitride Nanowire-Based Yellow Light-Emitting Diode on Amorphous Quartz Using Thin Ti Interlayer.

PubMed

Prabaswara, Aditya; Min, Jung-Wook; Zhao, Chao; Janjua, Bilal; Zhang, Daliang; Albadri, Abdulrahman M; Alyamani, Ahmed Y; Ng, Tien Khee; Ooi, Boon S

2018-02-06

Consumer electronics have increasingly relied on ultra-thin glass screen due to its transparency, scalability, and cost. In particular, display technology relies on integrating light-emitting diodes with display panel as a source for backlighting. In this study, we undertook the challenge of integrating light emitters onto amorphous quartz by demonstrating the direct growth and fabrication of a III-nitride nanowire-based light-emitting diode. The proof-of-concept device exhibits a low turn-on voltage of 2.6 V, on an amorphous quartz substrate. We achieved ~ 40% transparency across the visible wavelength while maintaining electrical conductivity by employing a TiN/Ti interlayer on quartz as a translucent conducting layer. The nanowire-on-quartz LED emits a broad linewidth spectrum of light centered at true yellow color (~ 590 nm), an important wavelength bridging the green-gap in solid-state lighting technology, with significantly less strain and dislocations compared to conventional planar quantum well nitride structures. Our endeavor highlighted the feasibility of fabricating III-nitride optoelectronic device on a scalable amorphous substrate through facile growth and fabrication steps. For practical demonstration, we demonstrated tunable correlated color temperature white light, leveraging on the broadly tunable nanowire spectral characteristics across red-amber-yellow color regime.

Efficient non-doped phosphorescent orange, blue and white organic light-emitting devices.

PubMed

Yin, Yongming; Yu, Jing; Cao, Hongtao; Zhang, Letian; Sun, Haizhu; Xie, Wenfa

2014-10-24

Efficient phosphorescent orange, blue and white organic light-emitting devices (OLEDs) with non-doped emissive layers were successfully fabricated. Conventional blue phosphorescent emitters bis [4,6-di-fluorophenyl]-pyridinato-N,C(2')] picolinate (Firpic) and Bis(2,4-difluorophenylpyridinato) (Fir6) were adopted to fabricate non-doped blue OLEDs, which exhibited maximum current efficiency of 7.6 and 4.6 cd/A for Firpic and Fir6 based devices, respectively. Non-doped orange OLED was fabricated utilizing the newly reported phosphorescent material iridium (III) (pbi)₂Ir(biq), of which manifested maximum current and power efficiency of 8.2 cd/A and 7.8 lm/W. The non-doped white OLEDs were achieved by simply combining Firpic or Fir6 with a 2-nm (pbi)₂Ir(biq). The maximum current and power efficiency of the Firpic and (pbi)₂Ir(biq) based white OLED were 14.8 cd/A and 17.9 lm/W.

Gallium Nitride Nanowires and Heterostructures: Toward Color-Tunable and White-Light Sources.

PubMed

Kuykendall, Tevye R; Schwartzberg, Adam M; Aloni, Shaul

2015-10-14

Gallium-nitride-based light-emitting diodes have enabled the commercialization of efficient solid-state lighting devices. Nonplanar nanomaterial architectures, such as nanowires and nanowire-based heterostructures, have the potential to significantly improve the performance of light-emitting devices through defect reduction, strain relaxation, and increased junction area. In addition, relaxation of internal strain caused by indium incorporation will facilitate pushing the emission wavelength into the red. This could eliminate inefficient phosphor conversion and enable color-tunable emission or white-light emission by combining blue, green, and red sources. Utilizing the waveguiding modes of the individual nanowires will further enhance light emission, and the properties of photonic structures formed by nanowire arrays can be implemented to improve light extraction. Recent advances in synthetic methods leading to better control over GaN and InGaN nanowire synthesis are described along with new concept devices leading to efficient white-light emission. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Direct integration of polycrystalline graphene into light emitting diodes by plasma-assisted metal-catalyst-free synthesis.

PubMed

Kim, Yong Seung; Joo, Kisu; Jerng, Sahng-Kyoon; Lee, Jae Hong; Moon, Daeyoung; Kim, Jonghak; Yoon, Euijoon; Chun, Seung-Hyun

2014-03-25

The integration of graphene into devices is a challenging task because the preparation of a graphene-based device usually includes graphene growth on a metal surface at elevated temperatures (∼1000 °C) and a complicated postgrowth transfer process of graphene from the metal catalyst. Here we report a direct integration approach for incorporating polycrystalline graphene into light emitting diodes (LEDs) at low temperature by plasma-assisted metal-catalyst-free synthesis. Thermal degradation of the active layer in LEDs is negligible at our growth temperature, and LEDs could be fabricated without a transfer process. Moreover, in situ ohmic contact formation is observed between DG and p-GaN resulting from carbon diffusion into the p-GaN surface during the growth process. As a result, the contact resistance is reduced and the electrical properties of directly integrated LEDs outperform those of LEDs with transferred graphene electrodes. This relatively simple method of graphene integration will be easily adoptable in the industrialization of graphene-based devices.

Spectral matching technology for light-emitting diode-based jaundice photodynamic therapy device

NASA Astrophysics Data System (ADS)

Gan, Ru-ting; Guo, Zhen-ning; Lin, Jie-ben

2015-02-01

The objective of this paper is to obtain the spectrum of light-emitting diode (LED)-based jaundice photodynamic therapy device (JPTD), the bilirubin absorption spectrum in vivo was regarded as target spectrum. According to the spectral constructing theory, a simple genetic algorithm as the spectral matching algorithm was first proposed in this study. The optimal combination ratios of LEDs were obtained, and the required LEDs number was then calculated. Meanwhile, the algorithm was compared with the existing spectral matching algorithms. The results show that this algorithm runs faster with higher efficiency, the switching time consumed is 2.06 s, and the fitting spectrum is very similar to the target spectrum with 98.15% matching degree. Thus, blue LED-based JPTD can replace traditional blue fluorescent tube, the spectral matching technology that has been put forward can be applied to the light source spectral matching for jaundice photodynamic therapy and other medical phototherapy.

Fundamental and future prospects of printed ambipolar fluorene-type polymer light-emitting transistors for improved external quantum efficiency, mobility, and emission pattern

NASA Astrophysics Data System (ADS)

Kajii, Hirotake

2018-05-01

In this review, we focus on the improved external quantum efficiency, field-effect mobility, and emission pattern of top-gate-type polymer light-emitting transistors (PLETs) based on ambipolar fluorene-type polymers. A low-temperature, high-efficiency, printable red phosphorescent PLET based on poly(alkylfluorene) with modified alkyl side chains fabricated by a film transfer process is demonstrated. Device fabrication based on oriented films leads to an improved EL intensity owing to the increase in field-effect mobility. There are three factors that affect the transport of carriers, i.e., the energy level, threshold voltage, and mobility of each layer for heterostructure PLETs, which result in various emission patterns such as the line-shaped, multicolor and in-plane emission pattern in the full-channel area between source and drain electrodes. Fundamentals and future prospects in heterostructure devices are discussed and reviewed.

Efficient double-emitting layer inverted organic light-emitting devices with different spacer layers

NASA Astrophysics Data System (ADS)

Nie, Qu-yang; Zhang, Fang-hui

2017-09-01

Double-emitting layer inverted organic light-emitting devices (IOLEDs) with different spacer layers were investigated, where 2,20,7,70-tetrakis(carbazol-9-yl)-9,9-spirobifluorene (CBP), 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), 4,7-diphenyl-1,10-phenanthroline (Bphen) and 4,40,400-tris(N-carbazolyl)-triphenylamine (TCTA) were used as spacer layers, respectively, and GIr1 and R-4b were used as green and red guest phosphorescent materials, respectively. The results show that the device with BCP spacer layer has the best performance. The maximum current efficiency of the BCP spacer layer device reaches up to 24.15 cd·A-1 when the current density is 3.99 mA·cm-2, which is 1.23 times bigger than that of the CBP spacer layer device. The performance is better than that of corresponding conventional device observably. The color coordinate of the device with BCP spacer layer only changes from (0.625 1, 0.368 0) to (0.599 5, 0.392 8) when the driving voltage increases from 6 V to 10 V, so it shows good stability in color coordinate, which is due to the adoption of the co-doping evaporation method for cladding luminous layer and the effective restriction of spacer layer to carriers in emitting layer.

Surface plasmon-mediated energy transfer of electrically-pumped excitons

DOEpatents

An, Kwang Hyup; Shtein, Max; Pipe, Kevin P.

2015-08-25

An electrically pumped light emitting device emits a light when powered by a power source. The light emitting device includes a first electrode, a second electrode including an outer surface, and at least one active organic semiconductor disposed between the first and second electrodes. The device also includes a dye adjacent the outer surface of the second electrode such that the second electrode is disposed between the dye and the active organic semiconductor. A voltage applied by the power source across the first and second electrodes causes energy to couple from decaying dipoles into surface plasmon polariton modes, which then evanescently couple to the dye to cause the light to be emitted.

Light-emitting diodes based on solution-processed nontoxic quantum dots: oxides as carrier-transport layers and introducing molybdenum oxide nanoparticles as a hole-inject layer.

PubMed

Bhaumik, Saikat; Pal, Amlan J

2014-07-23

We report fabrication and characterization of solution-processed quantum dot light-emitting diodes (QDLEDs) based on a layer of nontoxic and Earth-abundant zinc-diffused silver indium disulfide (AIZS) nanoparticles as an emitting material. In the QDLEDs fabricated on indium tin oxide (ITO)-coated glass substrates, we use layers of oxides, such as graphene oxide (GO) and zinc oxide (ZnO) nanoparticles as a hole- and electron-transport layer, respectively. In addition, we introduce a layer of MoO3 nanoparticles as a hole-inject one. We report a comparison of the characteristics of different device architectures. We show that an inverted device architecture, ITO/ZnO/AIZS/GO/MoO3/Al, yields a higher electroluminescence (EL) emission, compared to direct ones, for three reasons: (1) the GO/MoO3 layers introduce barriers for electrons to reach the Al electrode, and, similarly, the ZnO layers acts as a barrier for holes to travel to the ITO electrode; (2) the introduction of a layer of MoO3 nanoparticles as a hole-inject layer reduces the barrier height for holes and thereby balances charge injection in the inverted structure; and (3) the wide-bandgap zinc oxide next to the ITO electrode does not absorb the EL emission during its exit from the device. In the QDLEDs with oxides as carrier inject and transport layers, the EL spectrum resembles the photoluminescence emission of the emitting material (AIZS), implying that excitons are formed in the quaternary nanocrystals and decay radiatively.

Synthesis and electroluminescence property of new hexaphenylbenzene derivatives including amine group for blue emitters

PubMed Central

2013-01-01

Three new blue-emitting compounds of 5P-VA, 5P-VTPA, and 5P-DVTPA for organic light-emitting diode (OLED) based on hexaphenylbenzene moiety were demonstrated. Physical properties by the change of the substitution groups of the synthesized materials were systematically examined. Photoluminescence spectrum of the synthesized materials showed maximum emitting wavelengths of about 400 to 447 nm in solution state and 451 to 461 nm in film state, indicating deep blue emission color. OLED devices were fabricated by the synthesized compounds using vacuum deposit process as an emitting layer. The device structure was ITO/2-TNATA 60 nm/ NPB 15 nm/ EML 35 nm/ TPBi 20 nm/ LiF 1 nm/ Al 200 nm. External quantum efficiencies and CIE values of 5P-VA, 5P-VTPA, and 5P-DVTPA were 1.89%, 3.59%, 3.34%, and (0.154, 0.196), (0.150, 0.076), (0.148, 0.120), respectively. 5P-VTPA and 5P-DVTPA exhibited superior highly blue quality and thermal property such as high Td of 448°C and 449°C. PMID:24134333

A white organic light emitting diode based on anthracene-triphenylamine derivatives

NASA Astrophysics Data System (ADS)

Jiang, Quan; Qu, Jianjun; Yu, Junsheng; Tao, Silu; Gan, Yuanyuan; Jiang, Yadong

2010-10-01

White organic lighting-diode (WOLED) can be used as flat light sources, backlights for liquid crystal displays and full color displays. Recently, a research mainstream of white OLED is to develop the novel materials and optimize the structure of devices. In this work a WOLED with a structure of ITO/NPB/PAA/Alq3: x% rubrene/Alq3/Mg: Ag, was fabricated. The device has two light-emitting layers. NPB is used as a hole transport layer, PAA as a blue emitting layer, Alq3: rubrene host-guest system as a yellow emitting layer, and Alq3 close to the cathode as an electron transport layer. In the experiment, the doping concentration of rubrene was optimized. WOLED 1 with 4% rubrene achieved a maximum luminous efficiency of 1.80 lm/W, a maximum luminance of 3926 cd/m2 and CIE coordinates of (0.374, 0.341) .WOLED 2 with 2% rubrene achieved a maximum luminous efficiency of 0.65 lm/W, a maximum luminance of 7495cd/m2 and CIE coordinates of (0.365,0.365).

Multifunctional Polymer Nanofibers: UV Emission, Optical Gain, Anisotropic Wetting, and High Hydrophobicity for Next Flexible Excitation Sources

PubMed Central

2015-01-01

The use of UV light sources is highly relevant in many fields of science, being directly related to all those detection and diagnosis procedures that are based on fluorescence spectroscopy. Depending on the specific application, UV light-emitting materials are desired to feature a number of opto-mechanical properties, including brightness, optical gain for being used in laser devices, flexibility to conform with different lab-on-chip architectures, and tailorable wettability to control and minimize their interaction with ambient humidity and fluids. In this work, we introduce multifunctional, UV-emitting electrospun fibers with both optical gain and greatly enhanced anisotropic hydrophobicity compared to films. Fibers are described by the onset of a composite wetting state, and their arrangement in uniaxial arrays further favors liquid directional control. The low gain threshold, optical losses, plastic nature, flexibility, and stability of these UV-emitting fibers make them interesting for building light-emitting devices and microlasers. Furthermore, the anisotropic hydrophobicity found is strongly synergic with optical properties, reducing interfacial interactions with liquids and enabling smart functional surfaces for droplet microfluidic and wearable applications. PMID:26401889

Phosphor-free, white-light LED under alternating-current operation.

PubMed

Yao, Yu-Feng; Chen, Hao-Tsung; Su, Chia-Ying; Hsieh, Chieh; Lin, Chun-Han; Kiang, Yean-Woei; Yang, C C

2014-11-15

A light-emitting diode structure, consisting of a p-GaN layer, a CdZnO/ZnO quantum-well (QW) structure, a high-temperature-grown ZnO layer, and a GaZnO layer, is fabricated. Under forward bias, the device effectively emits green-yellow light, from the QW structure, at the rim of device mesa. Under reverse bias, electrons in the valence band of the p-GaN layer move into the conduction band of the GaZnO layer, through a QW-state-assisted tunneling process, to recombine with the injected holes in the GaZnO layer, for emitting yellow-red and shallow ultraviolet light over the entire mesa area. Also, carrier recombination in the p-GaN layer produces blue light. By properly designing the thickness of the high-temperature grown ZnO layer, the emission intensity under forward bias can be controlled such that, under alternating-current operation at 60 Hz, the spatial and spectral mixtures of the emitted lights of complementary colors, under forward and reverse biases, result in white light generation based on persistence of vision.

High-power LED light sources for optical measurement systems operated in continuous and overdriven pulsed modes

NASA Astrophysics Data System (ADS)

Stasicki, Bolesław; Schröder, Andreas; Boden, Fritz; Ludwikowski, Krzysztof

2017-06-01

The rapid progress of light emitting diode (LED) technology has recently resulted in the availability of high power devices with unprecedented light emission intensities comparable to those of visible laser light sources. On this basis two versatile devices have been developed, constructed and tested. The first one is a high-power, single-LED illuminator equipped with exchangeable projection lenses providing a homogenous light spot of defined diameter. The second device is a multi-LED illuminator array consisting of a number of high-power LEDs, each integrated with a separate collimating lens. These devices can emit R, G, CG, B, UV or white light and can be operated in pulsed or continuous wave (CW) mode. Using an external trigger signal they can be easily synchronized with cameras or other devices. The mode of operation and all parameters can be controlled by software. Various experiments have shown that these devices have become a versatile and competitive alternative to laser and xenon lamp based light sources. The principle, design, achieved performances and application examples are given in this paper.

Fabrication of an Organic Light-Emitting Diode from New Host π Electron Rich Zinc Complex

NASA Astrophysics Data System (ADS)

Jafari, Mohammad Reza; Janghouri, Mohammad; Shahedi, Zahra

2017-01-01

A new π electron rich zinc complex was used as a fluorescent material in organic light-emitting diodes (OLEDs). Devices with a structure of indium tin oxide/poly (3,4-ethylenedi-oxythiophene):poly(styrenesulfonate) (PEDOT: PSS) (50 nm)/polyvinylcarbazole (60 nm)/Zn: %2 porphyrin derivatives (45 nm)/Al (150 nm) were fabricated. Porphyrin derivatives accounting for 2 wt.% in the π electron rich zinc complex were used as a host. The electroluminescence (EL) spectra of porphyrin derivatives indicated a red shift, as π electron rich zinc complex EL spectra. The device (4) has also a luminance of 3420 cd/m2 and maximum efficiency of 1.58 cd/A at 15 V, which are the highest values among four devices. The result of Commission International del'Eclairage (CIE) (X, Y) coordinate and EL spectrum of device (3) indicated that it is more red shifted compared to other devices. Results of this work indicate that π electron rich zinc complex is a promising host material for high efficiency red OLEDs and has a simple structure compared to Alq3-based devices.

High yield and ultrafast sources of electrically triggered entangled-photon pairs based on strain-tunable quantum dots.

PubMed

Zhang, Jiaxiang; Wildmann, Johannes S; Ding, Fei; Trotta, Rinaldo; Huo, Yongheng; Zallo, Eugenio; Huber, Daniel; Rastelli, Armando; Schmidt, Oliver G

2015-12-01

Triggered sources of entangled photon pairs are key components in most quantum communication protocols. For practical quantum applications, electrical triggering would allow the realization of compact and deterministic sources of entangled photons. Entangled-light-emitting-diodes based on semiconductor quantum dots are among the most promising sources that can potentially address this task. However, entangled-light-emitting-diodes are plagued by a source of randomness, which results in a very low probability of finding quantum dots with sufficiently small fine structure splitting for entangled-photon generation (∼10(-2)). Here we introduce strain-tunable entangled-light-emitting-diodes that exploit piezoelectric-induced strains to tune quantum dots for entangled-photon generation. We demonstrate that up to 30% of the quantum dots in strain-tunable entangled-light-emitting-diodes emit polarization-entangled photons. An entanglement fidelity as high as 0.83 is achieved with fast temporal post selection. Driven at high speed, that is 400 MHz, strain-tunable entangled-light-emitting-diodes emerge as promising devices for high data-rate quantum applications.

Optical systems fabricated by printing-based assembly

DOEpatents

Rogers, John; Nuzzo, Ralph; Meitl, Matthew; Menard, Etienne; Baca, Alfred J; Motala, Michael; Ahn, Jong-Hyun; Park, Sang-Il; Yu, Chang-Jae; Ko, Heung Cho; Stoykovich, Mark; Yoon, Jongseung

2014-05-13

Provided are optical devices and systems fabricated, at least in part, via printing-based assembly and integration of device components. In specific embodiments the present invention provides light emitting systems, light collecting systems, light sensing systems and photovoltaic systems comprising printable semiconductor elements, including large area, high performance macroelectronic devices. Optical systems of the present invention comprise semiconductor elements assembled, organized and/or integrated with other device components via printing techniques that exhibit performance characteristics and functionality comparable to single crystalline semiconductor based devices fabricated using conventional high temperature processing methods. Optical systems of the present invention have device geometries and configurations, such as form factors, component densities, and component positions, accessed by printing that provide a range of useful device functionalities. Optical systems of the present invention include devices and device arrays exhibiting a range of useful physical and mechanical properties including flexibility, shapeability, conformability and stretchablity.

Optical systems fabricated by printing-based assembly

DOEpatents

Rogers, John [Champaign, IL; Nuzzo, Ralph [Champaign, IL; Meitl, Matthew [Durham, NC; Menard, Etienne [Durham, NC; Baca, Alfred J [Urbana, IL; Motala, Michael [Champaign, IL; Ahn, Jong-Hyun [Suwon, KR; Park, Sang-II [Savoy, IL; Yu,; Chang-Jae, [Urbana, IL; Ko, Heung-Cho [Gwangju, KR; Stoykovich,; Mark, [Dover, NH; Yoon, Jongseung [Urbana, IL

2011-07-05

Provided are optical devices and systems fabricated, at least in part, via printing-based assembly and integration of device components. In specific embodiments the present invention provides light emitting systems, light collecting systems, light sensing systems and photovoltaic systems comprising printable semiconductor elements, including large area, high performance macroelectronic devices. Optical systems of the present invention comprise semiconductor elements assembled, organized and/or integrated with other device components via printing techniques that exhibit performance characteristics and functionality comparable to single crystalline semiconductor based devices fabricated using conventional high temperature processing methods. Optical systems of the present invention have device geometries and configurations, such as form factors, component densities, and component positions, accessed by printing that provide a range of useful device functionalities. Optical systems of the present invention include devices and device arrays exhibiting a range of useful physical and mechanical properties including flexibility, shapeability, conformability and stretchablity.

Optical systems fabricated by printing-based assembly

DOEpatents

Rogers, John; Nuzzo, Ralph; Meitl, Matthew; Menard, Etienne; Baca, Alfred; Motala, Michael; Ahn, Jong -Hyun; Park, Sang -Il; Yu, Chang -Jae; Ko, Heung Cho; Stoykovich, Mark; Yoon, Jongseung

2015-08-25

Provided are optical devices and systems fabricated, at least in part, via printing-based assembly and integration of device components. In specific embodiments the present invention provides light emitting systems, light collecting systems, light sensing systems and photovoltaic systems comprising printable semiconductor elements, including large area, high performance macroelectronic devices. Optical systems of the present invention comprise semiconductor elements assembled, organized and/or integrated with other device components via printing techniques that exhibit performance characteristics and functionality comparable to single crystalline semiconductor based devices fabricated using conventional high temperature processing methods. Optical systems of the present invention have device geometries and configurations, such as form factors, component densities, and component positions, accessed by printing that provide a range of useful device functionalities. Optical systems of the present invention include devices and device arrays exhibiting a range of useful physical and mechanical properties including flexibility, shapeability, conformability and stretchablity.

Optical systems fabricated by printing-based assembly

DOEpatents

Rogers, John; Nuzzo, Ralph; Meitl, Matthew; Menard, Etienne; Baca, Alfred; Motala, Michael; Ahn, Jong-Hyun; Park, Sang-Il; Yu, Chang-Jae; Ko, Heung Cho; Stoykovich, Mark; Yoon, Jongseung

2017-03-21

Provided are optical devices and systems fabricated, at least in part, via printing-based assembly and integration of device components. In specific embodiments the present invention provides light emitting systems, light collecting systems, light sensing systems and photovoltaic systems comprising printable semiconductor elements, including large area, high performance macroelectronic devices. Optical systems of the present invention comprise semiconductor elements assembled, organized and/or integrated with other device components via printing techniques that exhibit performance characteristics and functionality comparable to single crystalline semiconductor based devices fabricated using conventional high temperature processing methods. Optical systems of the present invention have device geometries and configurations, such as form factors, component densities, and component positions, accessed by printing that provide a range of useful device functionalities. Optical systems of the present invention include devices and device arrays exhibiting a range of useful physical and mechanical properties including flexibility, shapeability, conformability and stretchablity.

Workshop on Compound Semiconductor Devices and Integrated Circuits held in Europe (24th) on May 29 - Jun 2, 2000 in Aegean Sea, Greece

DTIC Science & Technology

2000-06-02

Telecomunicazioni, Torino. Italy 1.30pm XIV.4 "The Reliability of AlGalnP Visible Light Emitting Diodes " D.V. MORGAN and I. Al-Ofi Cardiff University...XV.5 "Green SQW InGaN light - emitting diodes on Si( 111) by metalorganic vapor phase epitaxy" E. Feltin, S. Dalmasso, H. Lareche, B. Beaumont, P. de...effect on GaN-based high efficiency light emitting diodes of a surprisingly high density of TDs has led to considerable interest in determining their

Infrared emitting device and method

DOEpatents

Kurtz, Steven R.; Biefeld, Robert M.; Dawson, L. Ralph; Howard, Arnold J.; Baucom, Kevin C.

1997-01-01

An infrared emitting device and method. The infrared emitting device comprises a III-V compound semiconductor substrate upon which are grown a quantum-well active region having a plurality of quantum-well layers formed of a ternary alloy comprising InAsSb sandwiched between barrier layers formed of a ternary alloy having a smaller lattice constant and a larger energy bandgap than the quantum-well layers. The quantum-well layers are preferably compressively strained to increase the threshold energy for Auger recombination; and a method is provided for determining the preferred thickness for the quantum-well layers. Embodiments of the present invention are described having at least one cladding layer to increase the optical and carrier confinement in the active region, and to provide for waveguiding of the light generated within the active region. Examples have been set forth showing embodiments of the present invention as surface- and edge-emitting light emitting diodes (LEDs), an optically-pumped semiconductor laser, and an electrically-injected semiconductor diode laser. The light emission from each of the infrared emitting devices of the present invention is in the midwave infrared region of the spectrum from about 2 to 6 microns.

Effects of emission layer doping on the spatial distribution of charge and host recombination rate density in organic light emitting devices: A numerical study

NASA Astrophysics Data System (ADS)

Li, Yanli; Zhou, Maoqing; Zheng, Tingcai; Yao, Bo; Peng, Yingquan

2013-12-01

Based on drift-diffusion theory, a numerical model of the doping of a single energy level trap in the emission layer of an organic light emitting device (OLED) was developed, and the effects of doping of this single energy level trap on the distribution of the charge density, the recombination rate density, and the electric field in single- and double-layer OLEDs were studied numerically. The results show that by doping the n-type (p-type) emission layer with single energy electron (hole) traps, the distribution of the recombination rate density can be tuned and shifted, which is useful for improvement of the device performance by reduced electrode quenching or for realization of desirable special functions, e.g., emission spectrum tuning in multiple dye-doped white OLEDs.

Printing Smart Designs of Light Emitting Devices with Maintained Textile Properties.

PubMed

Verboven, Inge; Stryckers, Jeroen; Mecnika, Viktorija; Vandevenne, Glen; Jose, Manoj; Deferme, Wim

2018-02-13

To maintain typical textile properties, smart designs of light emitting devices are printed directly onto textile substrates. A first approach shows improved designs for alternating current powder electroluminescence (ACPEL) devices. A configuration with the following build-up, starting from the textile substrate, was applied using the screen printing technique: silver (10 µm)/barium titanate (10 µm)/zinc-oxide (10 µm) and poly(3,4-ethylenedioxythiophene)poly(styrenesulfonate) (10 µm). Textile properties such as flexibility, drapability and air permeability are preserved by implementing a pixel-like design of the printed layers. Another route is the application of organic light emitting devices (OLEDs) fabricated out of following layers, also starting from the textile substrate: polyurethane or acrylate (10-20 µm) as smoothing layer/silver (200 nm)/poly(3,4-ethylenedioxythiophene)poly(styrenesulfonate) (35 nm)/super yellow (80 nm)/calcium/aluminum (12/17 nm). Their very thin nm-range layer thickness, preserving the flexibility and drapability of the substrate, and their low working voltage, makes these devices the possible future in light-emitting wearables.

All solution-processed micro-structured flexible electrodes for low-cost light-emitting pressure sensors fabrication.

PubMed

Shimotsu, Rie; Takumi, Takahiro; Vohra, Varun

2017-07-31

Recent studies have demonstrated the advantage of developing pressure-sensitive devices with light-emitting properties for direct visualization of pressure distribution, potential application to next generation touch panels and human-machine interfaces. To ensure that this technology is available to everyone, its production cost should be kept as low as possible. Here, simple device concepts, namely, pressure sensitive flexible hybrid electrodes and OLED architecture, are used to produce low-cost resistive or light-emitting pressure sensors. Additionally, integrating solution-processed self-assembled micro-structures into the flexible hybrid electrodes composed of an elastomer and conductive materials results in enhanced device performances either in terms of pressure or spatial distribution sensitivity. For instance, based on the pressure applied, the measured values for the resistances of pressure sensors range from a few MΩ down to 500 Ω. On the other hand, unlike their evaporated equivalents, the combination of solution-processed flexible electrodes with an inverted OLED architectures display bright green emission when a pressure over 200 kPa is applied. At a bias of 3 V, their luminance can be tuned by applying a higher pressure of 500 kPa. Consequently, features such as fingernails and fingertips can be clearly distinguished from one another in these long-lasting low-cost devices.

Ordered polymer nanofibers enhance output brightness in bilayer light-emitting field-effect transistors.

PubMed

Hsu, Ben B Y; Seifter, Jason; Takacs, Christopher J; Zhong, Chengmei; Tseng, Hsin-Rong; Samuel, Ifor D W; Namdas, Ebinazar B; Bazan, Guillermo C; Huang, Fei; Cao, Yong; Heeger, Alan J

2013-03-26

Polymer light emitting field effect transistors are a class of light emitting devices that reveal interesting device physics. Device performance can be directly correlated to the most fundamental polymer science. Control over surface properties of the transistor dielectric can dramatically change the polymer morphology, introducing ordered phase. Electronic properties such as carrier mobility and injection efficiency on the interface can be promoted by ordered nanofibers in the polymer. Moreover, by controlling space charge in the polymer interface, the recombination zone can be spatially extended and thereby enhance the optical output.

Cyclometalated Iridium(III) Carbene Phosphors for Highly Efficient Blue Organic Light-Emitting Diodes.

PubMed

Chen, Zhao; Wang, Liqi; Su, Sikai; Zheng, Xingyu; Zhu, Nianyong; Ho, Cheuk-Lam; Chen, Shuming; Wong, Wai-Yeung

2017-11-22

Five deep blue carbene-based iridium(III) phosphors were synthesized and characterized. Interestingly, one of them can be fabricated into deep blue, sky blue and white organic light-emitting diodes (OLEDs) through changing the host materials and exciton blocking layers. These deep and sky blue devices exhibit Commission Internationale de l'Éclairage (CIE) coordinates of (0.145, 0.186) and (0.152, 0.277) with external quantum efficiency (EQE) of 15.2% and 9.6%, respectively. The EQE of the deep blue device can be further improved up to 19.0% by choosing a host with suitable energy level of its lowest unoccupied molecular orbital (LUMO).

FAST TRACK COMMUNICATION Host-free, yellow phosphorescent material in white organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Lee, Meng-Ting; Chu, Miao-Tsai; Lin, Jin-Sheng; Tseng, Mei-Rurng

2010-11-01

A white organic light-emitting diode (WOLED) with a high power efficiency has been demonstrated by dispersing a host-free, yellow phosphorescent material in between double blue phosphorescent emitters. The device performance achieved a comparable value to that of using a complicated host-guest doping system to form the yellow emitter in WOLEDs. Based on this device concept as well as the molecular engineering of blue phosphorescent host material and light-extraction film, a WOLED with a power efficiency of 65 lm W-1 at a practical brightness of 1000 cd m-2 with Commission Internationale d'Echariage coordinates (CIEx,y) of (0.37, 0.47) was achieved.

Long-lifetime thin-film encapsulated organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Wong, F. L.; Fung, M. K.; Tao, S. L.; Lai, S. L.; Tsang, W. M.; Kong, K. H.; Choy, W. M.; Lee, C. S.; Lee, S. T.

2008-07-01

Multiple fluorocarbon (CFx) and silicon nitride (Si3N4) bilayers were applied as encapsulation cap on glass-based organic light-emitting diodes (OLEDs). When CFx/Si3N4 bilayers were deposited onto the OLED structure, the devices showed performance worse than one without any encapsulation. The adverse effects were attributed to the damage caused by reaction species during the thin-film deposition processes. To solve this problem, a CuPc interlayer was found to provide effective protection to the OLED structure. With a structure of CuPc/(CFx/Si3N4)×5, the encapsulated device showed an operation lifetime over 8000 h (higher than 80% of that achieved with a conventional metal encapsulation).

GaN-Based Light-Emitting Diodes Grown on Nanoscale Patterned Sapphire Substrates with Void-Embedded Cortex-Like Nanostructures

NASA Astrophysics Data System (ADS)

Lin, Yu-Sheng; Yeh, J. Andrew

2011-09-01

High-efficiency GaN-based light-emitting diodes (LEDs) with an emitting wavelength of 438 nm were demonstrated utilizing nanoscale patterned sapphire substrates with void-embedded cortex-like nanostructures (NPSS-VECN). Unlike the previous nanopatterned sapphire substrates, the presented substrate has a new morphology that can not only improve the crystalline quality of GaN epilayers but also generate a void-embedded nanostructural layer to enhance light extraction. Under a driving current of 20 mA, the external quantum efficiency of an LED with NPSS-VECN is enhanced by 2.4-fold compared with that of the conventional LED. Moreover, the output powers of two devices respectively are 33.1 and 13.9 mW.

Hot electron light emission in gallium arsenide/aluminium(x) gallium(1-x) arsenic heterostructures

NASA Astrophysics Data System (ADS)

Teke, Ali

In this thesis we have demonstrated the operation of a novel tunable wavelength surface light emitting device. The device is based on a p-GaAs, and n-Ga1- xAlxAs heterojunction containing an inversion layer on the p- side, and GaAs quantum wells on the n- side, and, is referred to as HELLISH-2 (Hot Electron Light Emitting and Lasing in Semiconductor Heterostructure-Type 2). The devices utilise hot electron longitudinal transport and, therefore, light emission is independent of the polarity of the applied voltage. The wavelength of the emitted light can be tuned with the applied bias from GaAs band-to-band transition in the inversion layer to e1-hh1 transition in the quantum wells. In this work tunable means that the device can be operated at either single or multiple wavelength emission. The operation of the device requires only two diffused in point contacts. In this project four HELLISH-2 samples coded as ES1, ES2, ES6 and QT919 have been studied. First three samples were grown by MBE and the last one was grown by MOVPE techniques. ES1 was designed for single and double wavelength operation. ES2 was a control sample used to compare our results with previous work on HELLISH-2 and ES6 was designed for single, double and triple wavelength operation. Theoretical modelling of the device operation was carried out and compared with the experimental results. HELLISH-2 structure was optimised for low threshold and high efficiency operation as based on our model calculations. The last sample QT919 has been designed as an optimised device for single and double wavelength operation like ES1. HELLISH-2 has a number of advantages over the conventional light emitters, resulting in some possible applications, such as light logic gates and wavelength division multiplexing in optoelectronic.

Enhancement of electron injection in inverted bottom-emitting organic light-emitting diodes using Al/LiF compound thin film

NASA Astrophysics Data System (ADS)

Nie, Qu-yang; Zhang, Fang-hui

2018-05-01

The inverted bottom-emitting organic light-emitting devices (IBOLEDs) were prepared, with the structure of ITO/Al ( x nm)/LiF (1 nm)/Bphen (40 nm)/CBP: GIr1 (14%):R-4b (2%) (10 nm)/BCP (3 nm)/CBP:GIr1 (14%):R-4b (2%) (20 nm)/TCTA (10 nm)/NPB (40 nm)/MoO3 (40 nm)/Al (100 nm), where the thickness of electron injection layer Al ( x) are 0 nm, 2 nm, 3 nm, 4 nm and 5 nm, respectively. In this paper, the electron injection condition and luminance properties of inverted devices were investigated by changing the thickness of Al layer in Al/LiF compound thin film. It turns out that the introduction of Al layer can improve electron injection of the devices dramatically. Furthermore, the device exerts lower driving voltage and higher current efficiency when the thickness of electron injection Al layer is 3 nm. For example, the current efficiency of the device with 3-nm-thick Al layer reaches 19.75 cd·A-1 when driving voltage is 7 V, which is 1.24, 1.17 and 17.03 times larger than those of the devices with 2 nm, 4 nm and 5 nm Al layer, respectively. The device property reaches up to the level of corresponding conventional device. In addition, all inverted devices with electron injection Al layer show superior stability of color coordinate due to the adoption of co-evaporation emitting layer and BCP spacer-layer, and the color coordinate of the inverted device with 3-nm-thick Al layer only changes from (0.580 6, 0.405 6) to (0.532 8, 0.436 3) when driving voltage increases from 6 V to 10 V.

Bluish-white-light-emitting diodes based on two-dimensional lead halide perovskite (C6H5C2H4NH3)2PbCl2Br2

NASA Astrophysics Data System (ADS)

Cai, Peiqing; Wang, Xiangfu; Seo, Hyo Jin; Yan, Xiaohong

2018-04-01

Bluish-white-light-emitting diodes (BWLEDs) are designed based on the two-dimensional mixed halide perovskite (C6H5C2H4NH3)2PbCl2Br2 at room temperature. Bluish-white electroluminescence devices were fabricated by a spin-coating method. The BWLEDs can be turned on at 4.9 V and depict a maximum luminance of ˜70 cd/m2 at 7 V. Low and room temperature photoluminescence spectra show the coexistence of free exciton and self-trapped exciton luminescence in a deformable lattice. The strategy of achieving white electroluminescence (EL) from mixed halide perovskite reported here can be applied to other two-dimensional perovskites to increase the optoelectronic efficiency of the device in the future.

Alumina/polymer-coated nanocrystals with extremely high stability used as a color conversion material in LEDs

NASA Astrophysics Data System (ADS)

Woo, Ju Yeon; Lee, Jongsoo; Han, Chang-Soo

2013-12-01

The long-term stability of quantum dot (QD)-based devices under harsh environmental conditions has been a critical bottleneck to be resolved for commercial use. Here, we demonstrate an extremely stable QD/alumina/polymer hybrid structure by combining internal atomic layer deposition (ALD) infilling with polymer encapsulation. ALD infilling and polymer encapsulation of QDs synergistically prohibit the degradation of QDs in terms of optical, thermal and humid attacks. Our hybrid QD/alumina/polymer film structure showed no noticeable reduction in photoluminescence even in a commercial grade test (85% humidity at 85 ° C) over 28 days. In addition, we successfully fabricated a QD-based light-emitting device with excellent long-term stability by incorporating hybrid QD/alumina/polymer film as a color conversion material on light-emitting diode chips.

Two-color surface-emitting lasers by a GaAs-based coupled multilayer cavity structure for coherent terahertz light sources

NASA Astrophysics Data System (ADS)

Lu, Xiangmeng; Ota, Hiroto; Kumagai, Naoto; Minami, Yasuo; Kitada, Takahiro; Isu, Toshiro

2017-11-01

Two-color surface-emitting lasers were fabricated using a GaAs-based coupled multilayer cavity structure grown by molecular beam epitaxy. InGaAs/GaAs multiple quantum wells were introduced only in the upper cavity for two-mode emission in the near-infrared region. Two-color lasing of the device was successfully demonstrated under pulsed current operations at room temperature. We also observed good temporal coherence of the two-color laser light using a Michelson interferometer. A coherent terahertz source is expected when a wafer-bonded coupled cavity consisting of (0 0 1) and non-(0 0 1) epitaxial films is used for the two-color laser device, in which the difference-frequency generation can be enabled by the second-order nonlinear response in the lower cavity.

Measurement of the water content in oil and oil products using IR light-emitting diode-photodiode optrons

NASA Astrophysics Data System (ADS)

Bogdanovich, M. V.; Kabanau, D. M.; Lebiadok, Y. V.; Shpak, P. V.; Ryabtsev, A. G.; Ryabtsev, G. I.; Shchemelev, M. A.; Andreev, I. A.; Kunitsyna, E. V.; Ivanov, E. V.; Yakovlev, Yu. P.

2017-02-01

The feasibility of using light-emitting devices, the radiation spectrum of which has maxima at wavelengths of 1.7, 1.9, and 2.2 μm for determining the water concentration in oil and oil products (gasoline, kerosene, diesel fuel) has been demonstrated. It has been found that the measurement error can be lowered if (i) the temperature of the light-emitting diode is maintained accurate to 0.5-1.0°C, (ii) by using a cell through which a permanently stirred analyte is pumped, and (iii) by selecting the repetition rate of radiation pulses from the light-emitting diodes according to the averaging time. A meter of water content in oil and oil products has been developed that is built around IR light-emitting device-photodiode optrons. This device provides water content on-line monitoring accurate to 1.5%.

Near-Infrared to Visible Organic Upconversion Devices Based on Organic Light-Emitting Field Effect Transistors.

PubMed

Li, Dongwei; Hu, Yongsheng; Zhang, Nan; Lv, Ying; Lin, Jie; Guo, Xiaoyang; Fan, Yi; Luo, Jinsong; Liu, Xingyuan

2017-10-18

The near-infrared (NIR) to visible upconversion devices have attracted great attention because of their potential applications in the fields of night vision, medical imaging, and military security. Herein, a novel all-organic upconversion device architecture has been first proposed and developed by incorporating a NIR absorption layer between the carrier transport layer and the emission layer in heterostructured organic light-emitting field effect transistors (OLEFETs). The as-prepared devices show a typical photon-to-photon upconversion efficiency as high as 7% (maximum of 28.7% under low incident NIR power intensity) and millisecond-scale response time, which are the highest upconversion efficiency and one of the fastest response time among organic upconversion devices as referred to the previous reports up to now. The high upconversion performance mainly originates from the gain mechanism of field-effect transistor structures and the unique advantage of OLEFETs to balance between the photodetection and light emission. Meanwhile, the strategy of OLEFETs also offers the advantage of high integration so that no extra OLED is needed in the organic upconversion devices. The results would pave way for low-cost, flexible and portable organic upconversion devices with high efficiency and simplified processing.

Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control.

PubMed

Sun, Liangfeng; Choi, Joshua J; Stachnik, David; Bartnik, Adam C; Hyun, Byung-Ryool; Malliaras, George G; Hanrath, Tobias; Wise, Frank W

2012-05-06

Infrared light-emitting diodes are currently fabricated from direct-gap semiconductors using epitaxy, which makes them expensive and difficult to integrate with other materials. Light-emitting diodes based on colloidal semiconductor quantum dots, on the other hand, can be solution-processed at low cost, and can be directly integrated with silicon. However, so far, exciton dissociation and recombination have not been well controlled in these devices, and this has limited their performance. Here, by tuning the distance between adjacent PbS quantum dots, we fabricate thin-film quantum-dot light-emitting diodes that operate at infrared wavelengths with radiances (6.4 W sr(-1) m(-2)) eight times higher and external quantum efficiencies (2.0%) two times higher than the highest values previously reported. The distance between adjacent dots is tuned over a range of 1.3 nm by varying the lengths of the linker molecules from three to eight CH(2) groups, which allows us to achieve the optimum balance between charge injection and radiative exciton recombination. The electroluminescent powers of the best devices are comparable to those produced by commercial InGaAsP light-emitting diodes. By varying the size of the quantum dots, we can tune the emission wavelengths between 800 and 1,850 nm.

Highly efficient blue- and white-organic light emitting diodes base on triple-emitting layer.

PubMed

Shin, Hyun Su; Lee, Seok Jae; Lee, Ho Won; Lee, Dong Hyung; Kim, Woo Young; Yoon, Seung Soo; Kim, Young Kwan

2013-12-01

We have demonstrated highly efficient blue phosphorescent organic light-emitting diodes (PHOLEDs) using iridium (III) bis[(4,6-di-fluoropheny)-pyridinato-N,C2] picolinate (Flrpic) doped in three kinds of host materials, such as 9-(4-(triphenylsilyl)phenyl)-9H-carbazole (SPC), N,N'-dicarbazolyl-3,5-benzene (mCP), and 2,2',2"-(1,3,5-benzenetriyl)tris-[1-phenyl-1H-benzimidazole] (TPBi) as triple-emitting layer (T-EML). The properties of device with T-EML using the stepwise structure was found to be superior to the other blue PHOLEDs and exhibited a maximum luminous efficiency of 23.02 cd/A, a maximum external quantum efficiency of 11.09%, and a maximum power efficiency of 14.89 lm/W, respectively. An optimal blue device has improving charge balance and triplet excitons confinement within emitting layers (EMLs) each. Additionally, we also fabricated white PHOLED using a phosphorescent red dopant, bis(2-phenylquinolinato)-acetylacetonate iridium III (Ir(pq)2acac) doped in mCP and TPBi between blue EMLs. The properties of white PHOLED showed a maximum luminous efficiency and a maximum external quantum efficiency of 33.03 cd/A and 16.95%, respectively. It also showed the white emission with CIEx,y coordinates of (x = 0.36, y = 0.39) at 10 V.

Carbon nanotube polymer composition and devices

DOEpatents

Liu, Gao [Oakland, CA; Johnson, Stephen [Richmond, CA; Kerr, John B [Oakland, CA; Minor, Andrew M [El Cerrito, CA; Mao, Samuel S [Castro Valley, CA

2011-06-14

A thin film device and compound having an anode, a cathode, and at least one light emitting layer between the anode and cathode, the at least one light emitting layer having at least one carbon nanotube and a conductive polymer.

Spatially resolved Hall effect measurement in a single semiconductor nanowire.

PubMed

Storm, Kristian; Halvardsson, Filip; Heurlin, Magnus; Lindgren, David; Gustafsson, Anders; Wu, Phillip M; Monemar, Bo; Samuelson, Lars

2012-11-01

Efficient light-emitting diodes and photovoltaic energy-harvesting devices are expected to play an important role in the continued efforts towards sustainable global power consumption. Semiconductor nanowires are promising candidates as the active components of both light-emitting diodes and photovoltaic cells, primarily due to the added freedom in device design offered by the nanowire geometry. However, for nanowire-based components to move past the proof-of-concept stage and be implemented in production-grade devices, it is necessary to precisely quantify and control fundamental material properties such as doping and carrier mobility. Unfortunately, the nanoscale geometry that makes nanowires interesting for applications also makes them inherently difficult to characterize. Here, we report a method to carry out Hall measurements on single core-shell nanowires. Our technique allows spatially resolved and quantitative determination of the carrier concentration and mobility of the nanowire shell. As Hall measurements have previously been completely unavailable for nanowires, the experimental platform presented here should facilitate the implementation of nanowires in advanced practical devices.

Simple luminescence detectors using a light-emitting diode or a Xe lamp, optical fiber and charge-coupled device, or photomultiplier for determining proteins in capillary electrophoresis: a critical comparison.

PubMed

Casado-Terrones, Silvia; Fernández-Sánchez, Jorge F; Segura-Carretero, Antonio; Fernández-Gutiérrez, Alberto

2007-06-01

The performance of two homemade fluorescence-induced capillary electrophoresis detectors, one based on light-emitting diode (LED) as the excitation source and a charge-coupled device (CCD) photodetector and the other based on a commercial luminescence spectrometer (Xe lamp) as the excitation source and a photomultiplier tube as a detector, were compared for the determination of fluorescent proteins R-phycoerythrin and B-phycoerythrin. Both devices use commercially available, reasonably priced optical components that can be used by nonexperts. After fine optimization of several optical and separation parameters in both devices, a zone capillary electrophoresis methodology was achieved with 50mM borate buffer (pH 8.4) and 10mM phytic acid for the determination of two phycobiliproteins. Detection limits of 0.50 and 0.64microg/ml for R-phycoerythrin and B-phycoerythrin, respectively, were achieved by using the LED-induced fluorescence capillary electrophoresis (LED-IF-CE) system, and corresponding detection limits of 2.73 and 2.16microg/ml were achieved by using the Xe lamp-IF-CE system. Analytical performance and other parameters, such as cost and potential to miniaturization, are compared for both devices.

The Development of Ultraviolet Light Emitting Diodes on p-SiC Substrates

NASA Astrophysics Data System (ADS)

Brummer, Gordon

Ultraviolet (UV) light emitting diodes (LEDs) are promising light sources for purification, phototherapy, and resin curing applications. Currently, commercial UV LEDs are composed of AlGaN-based n-i-p junctions grown on sapphire substrates. These devices suffer from defects in the active region, inefficient p-type doping, and poor light extraction efficiency. This dissertation addresses the development of a novel UV LED device structure, grown on p-SiC substrates. In this device structure, the AlGaN-based intrinsic (i) and n-layers are grown directly on the p-type substrate, forming a p-i-n junction. The intrinsic layer (active region) is composed of an AlN buffer layer followed by three AlN/Al0.30Ga0.70N quantum wells. After the intrinsic layer, the n-layer is formed from n-type AlGaN. This device architecture addresses the deficiencies of UV LEDs on sapphire substrates while providing a vertical device geometry, reduced fabrication complexity, and improved thermal management. The device layers were grown by molecular beam epitaxy (MBE). The material properties were optimized by considering varying growth conditions and by considering the role of the layer within the device. AlN grown at 825 C and with a Ga surfactant yielded material with screw dislocation density of 1x10 7 cm-2 based on X-ray diffraction (XRD) analysis. AlGaN alloys grown in this work contained compositional inhomogeneity, as verified by high-resolution XRD, photoluminescence, and absorption measurements. Based on Stokes shift measurements, the degree of compositional inhomogeneity was correlated with the amount of excess Ga employed during growth. Compositional inhomogeneity yields carrier localizing potential fluctuations, which are advantages in light emitting device layers. Therefore, excess Ga growth conditions were used to grow AlN/Al0.30Ga0.70N quantum wells (designed using a wurtzite k.p model) with 35% internal quantum efficiency. Potential fluctuations limit the mobility of carriers and introduce sub-bandgap absorption, making them undesirable in the n-AlGaN layers. n-Al0.60Ga 0.40N grown under stoichiometric Ga flux and an In surfactant reduced the Stokes shift (compared to n-AlGaN grown without In) by 150 meV. However, even under these growth modes, some compositional inhomogeneity persisted which is speculatively attributed to the vicinal substrate. Device epitaxial layer stacks utilizing the optimum growth conditions were fabricated into prototype vertical UV LEDs which emit from 295-320 nm. In order to increase light extraction efficiency, UV distributed Bragg reflectors (DBRs) based on compositionally graded AlGaN alloys were designed using the transfer matrix method (TMM) and grown by MBE. DBRs were formed from repeated compositionally graded AlGaN alloys. This structure utilized the polarization doping and index of refraction variation of graded composition AlGaN. DBRs with square wave, sinusoidal, triangular, and sawtooth compositional profiles were realized, with reflectivity peaks over 50%, centered at 280 nm.

A blue-LED-based device for selective photocoagulation of superficial abrasions: theoretical modeling and in vivo validation

NASA Astrophysics Data System (ADS)

Rossi, Francesca; Pini, Roberto; De Siena, Gaetano; Massi, Daniela; Pavone, Francesco S.; Alfieri, Domenico; Cannarozzo, Giovanni

2010-02-01

The blue light (~400 nm) emitted by high power Light Emitting Diodes (LED) is selectively absorbed by the haemoglobin content of blood and then converted into heat. This is the basic concept in setting up a compact, low-cost, and easy-to-handle photohaemostasis device for the treatment of superficial skin abrasions. Its main application is in reducing bleeding from superficial capillary vessels during laser induced aesthetic treatments, such as skin resurfacing, thus reducing the treatment time and improving aesthetic results (reduction of scar formation). In this work we firstly present the preliminary modeling study: a Finite Element Model (FEM) of the LED induced photothermal process was set up, in order to estimate the optimal wavelength and treatment time, by studying the temperature dynamics in the tissue. Then, a compact, handheld illumination device has been designed: commercially available high power LEDs emitting in the blue region were mounted in a suitable and ergonomic case. The prototype was tested in the treatment of dorsal excoriations in rats. Thermal effects were monitored by an infrared thermocamera, experimentally evidencing the modest and confined heating effects and confirming the modeling predictions. Objective observations and histopathological analysis performed in a follow-up study showed no adverse reactions and no thermal damage in the treated areas and surrounding tissues. The device was then used in human patients, in order to stop bleeding during Erbium laser skin resurfacing procedure. By inducing LED-based photocoagulation, the overall treatment time was shortened and scar formation was reduced, thus enhancing esthetic effect of the laser procedure.

Review on peculiar issues of field emission in vacuum nanoelectronic devices

NASA Astrophysics Data System (ADS)

Filip, Valeriu; Filip, Lucian Dragoş; Wong, Hei

2017-12-01

Some of the modern aspects of field emission based electron sources have been collated in a short and comprehensive review. The usually overlooked peculiar aspects in this research field have been particularly emphasized in order to increase the interest in further fundamental studies and technological applications. The vast material was roughly split in two main branches which occasionally overlap: the electron emission devices based on chemically homogeneous nanostructured surfaces and the more complex nanocomposite emitting surfaces.

Flat panel ferroelectric electron emission display system

DOEpatents

Sampayan, Stephen E.; Orvis, William J.; Caporaso, George J.; Wieskamp, Ted F.

1996-01-01

A device which can produce a bright, raster scanned or non-raster scanned image from a flat panel. Unlike many flat panel technologies, this device does not require ambient light or auxiliary illumination for viewing the image. Rather, this device relies on electrons emitted from a ferroelectric emitter impinging on a phosphor. This device takes advantage of a new electron emitter technology which emits electrons with significant kinetic energy and beam current density.

InGaAsBi alloys on InP for efficient near- and mid-infrared light emitting devices

NASA Astrophysics Data System (ADS)

Jin, Shirong; John Sweeney, Stephen

2013-12-01

We present the band parameters such as band gap, spin-orbit splitting energy, band offsets and strain of InGaAsBi on InP based on recent experimental data. It is shown that InGaAsBi is promising for near- and mid-infrared photonic devices operating from 0.3-0.8 eV (1.5-4 μm) on conventional InP substrates. We also show how bismuth may be used to form alloys whereby the spin-orbit splitting energy (ΔSO) is large and controllable and can, for example, be made larger than the band gap (Eg) thereby providing a means of suppressing non-radiative hot-hole producing Auger recombination and inter-valence band absorption both involving the spin-orbit band. This is expected to improve the high-temperature performance and thermal stability of light emitting devices.

Trap-assisted tunneling in InGaN/GaN single-quantum-well light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Auf der Maur, M., E-mail: auf.der.maur@ing.uniroma2.it; Di Carlo, A.; Galler, B.

Based on numerical simulation and comparison with measured current characteristics, we show that the current in InGaN/GaN single-quantum-well light-emitting diodes at low forward bias can be accurately described by a standard trap-assisted tunneling model. The qualitative and quantitative differences in the current characteristics of devices with different emission wavelengths are demonstrated to be correlated in a physically consistent way with the tunneling model parameters.

Highly efficient phosphorescence from organic light-emitting devices with an exciton-block layer

NASA Astrophysics Data System (ADS)

Ikai, Masamichi; Tokito, Shizuo; Sakamoto, Youichi; Suzuki, Toshiyasu; Taga, Yasunori

2001-07-01

One of the keys to highly efficient phosphorescent emission in organic light-emitting devices is to confine triplet excitons generated within the emitting layer. We employ "starburst" perfluorinated phenylenes (C60F42) as a both hole- and exciton-block layer, and a hole-transport material 4,4',4″-tri(N-carbazolyl) triphenylamine as a host for the phosphorescent dopant dye in the emitting layer. A maximum external quantum efficiency reaches to 19.2%, and keeps over 15% even at high current densities of 10-20 mA/cm2, providing several times the brightness of fluorescent tubes for lighting. The onset voltage of the electroluminescence is as low as 2.4 V and the peak power efficiency is 70-72 lm/W, promising for low-power display devices.

Enhanced device performances of a new inverted top-emitting OLEDs with relatively thick Ag electrode.

PubMed

Park, So-Ra; Suh, Min Chul

2018-02-19

To improve the device performances of top-emitting organic light emitting diodes (TEOLEDs), we developed a new inverted TEOLEDs structure with silver (Ag) metal as a semi-transparent top electrode. Especially, we found that the use of relatively thick Ag electrode without using any carrier injection layer is beneficial to realize highly efficient device performances. Also, we could insert very thick overlying hole transport layer (HTL) on the emitting layer (EML) which could be very helpful to suppress the surface plasmon polariton (SPP) coupling if it is applied to the common bottom-emission OLEDs (BEOLEDs). As a result, we could realize noteworthy high current efficiency of approximately ~188.1 cd/A in our new inverted TEOLEDs with 25 nm thick Ag electrode.

Versatile light-emitting-diode-based spectral response measurement system for photovoltaic device characterization.

PubMed

Hamadani, Behrang H; Roller, John; Dougherty, Brian; Yoon, Howard W

2012-07-01

An absolute differential spectral response measurement system for solar cells is presented. The system couples an array of light emitting diodes with an optical waveguide to provide large area illumination. Two unique yet complementary measurement methods were developed and tested with the same measurement apparatus. Good agreement was observed between the two methods based on testing of a variety of solar cells. The first method is a lock-in technique that can be performed over a broad pulse frequency range. The second method is based on synchronous multifrequency optical excitation and electrical detection. An innovative scheme for providing light bias during each measurement method is discussed.

Device characteristics of organic light-emitting diodes based on electronic structure of the Ba-doped Alq3 layer.

PubMed

Lim, Jong Tae; Kim, Kyung Nam; Yeom, Geun Young

2009-12-01

Organic light-emitting diodes (OLEDs) with a Ba-doped tris(8-quinolinolato)aluminum(III) (Alq3) layer were fabricated to reduce the barrier height for electron injection and to improve the electron conductivity. In the OLED consisting of glass/ITO/4,4',4"-tris[2-naphthylphenyl-1-phenylamino]triphenylamine (2-TNATA, 30 nm)/4,4'-bis[N-(1-napthyl)-N-phenyl-amino]-biphenyl (NPB, 18 nm)/Alq3 (42 nm)/Ba-doped Alq3 (20 nm, x%: x = 0, 10, 25, and 50)/Al (100 nm), the device with the Alq3 layer doped with 10% Ba showed the highest light out-coupling characteristic. However, as the Ba dopant concentration was increased from 25% to 50%, this device characteristic was largely reduced. The characteristics of these devices were interpreted on the basis of the chemical reaction between Ba and Alq3 and the electron injection property by analyzing the electronic structure of the Ba-doped Alq3 layer. At a low Ba doping of 10%, mainly the Alq3 radical anion species was formed. In addition, the barrier height for electron injection in this layer was decreased to 0.6 eV, when compared to the pristine Alq3 layer. At a high Ba doping of 50%, the Alq3 molecules were severely decomposed. When the Ba dopant concentration was changed, the light-emitting characteristics of the devices were well coincided with the formation mechanism of Alq3 radical anion and Alq3 decomposition species.

Recent progress in photoactive organic field-effect transistors.

PubMed

Wakayama, Yutaka; Hayakawa, Ryoma; Seo, Hoon-Seok

2014-04-01

Recent progress in photoactive organic field-effect transistors (OFETs) is reviewed. Photoactive OFETs are divided into light-emitting (LE) and light-receiving (LR) OFETs. In the first part, LE-OFETs are reviewed from the viewpoint of the evolution of device structures. Device performances have improved in the last decade with the evolution of device structures from single-layer unipolar to multi-layer ambipolar transistors. In the second part, various kinds of LR-OFETs are featured. These are categorized according to their functionalities: phototransistors, non-volatile optical memories, and photochromism-based transistors. For both, various device configurations are introduced: thin-film based transistors for practical applications, single-crystalline transistors to investigate fundamental physics, nanowires, multi-layers, and vertical transistors based on new concepts.

Printing Smart Designs of Light Emitting Devices with Maintained Textile Properties †

PubMed Central

Verboven, Inge; Stryckers, Jeroen; Mecnika, Viktorija; Vandevenne, Glen; Jose, Manoj

2018-01-01

To maintain typical textile properties, smart designs of light emitting devices are printed directly onto textile substrates. A first approach shows improved designs for alternating current powder electroluminescence (ACPEL) devices. A configuration with the following build-up, starting from the textile substrate, was applied using the screen printing technique: silver (10 µm)/barium titanate (10 µm)/zinc-oxide (10 µm) and poly(3,4-ethylenedioxythiophene)poly(styrenesulfonate) (10 µm). Textile properties such as flexibility, drapability and air permeability are preserved by implementing a pixel-like design of the printed layers. Another route is the application of organic light emitting devices (OLEDs) fabricated out of following layers, also starting from the textile substrate: polyurethane or acrylate (10–20 µm) as smoothing layer/silver (200 nm)/poly(3,4-ethylenedioxythiophene)poly(styrenesulfonate) (35 nm)/super yellow (80 nm)/calcium/aluminum (12/17 nm). Their very thin nm-range layer thickness, preserving the flexibility and drapability of the substrate, and their low working voltage, makes these devices the possible future in light-emitting wearables. PMID:29438276

Decoupling degradation in exciton formation and recombination during lifetime testing of organic light-emitting devices

NASA Astrophysics Data System (ADS)

Hershey, Kyle W.; Suddard-Bangsund, John; Qian, Gang; Holmes, Russell J.

2017-09-01

The analysis of organic light-emitting device degradation is typically restricted to fitting the overall luminance loss as a function of time or the characterization of fully degraded devices. To develop a more complete understanding of degradation, additional specific data are needed as a function of luminance loss. The overall degradation in luminance during testing can be decoupled into a loss in emitter photoluminescence efficiency and a reduction in the exciton formation efficiency. Here, we demonstrate a method that permits separation of these component efficiencies, yielding the time evolution of two additional specific device parameters that can be used in interpreting and modeling degradation without modification to the device architecture or introduction of any additional post-degradation characterization steps. Here, devices based on the phosphor tris[2-phenylpyridinato-C2,N]iridium(III) (Ir(ppy)3) are characterized as a function of initial luminance and emissive layer thickness. The overall loss in device luminance is found to originate primarily from a reduction in the exciton formation efficiency which is exacerbated in devices with thinner emissive layers. Interestingly, the contribution to overall degradation from a reduction in the efficiency of exciton recombination (i.e., photoluminescence) is unaffected by thickness, suggesting a fixed exciton recombination zone width and degradation at an interface.

An Exciplex Host for Deep-Blue Phosphorescent Organic Light-Emitting Diodes.

PubMed

Lim, Hyoungcheol; Shin, Hyun; Kim, Kwon-Hyeon; Yoo, Seung-Jun; Huh, Jin-Suk; Kim, Jang-Joo

2017-11-01

The use of exciplex hosts is attractive for high-performance phosphorescent organic light-emitting diodes (PhOLEDs) and thermally activated delayed fluorescence OLEDs, which have high external quantum efficiency, low driving voltage, and low efficiency roll-off. However, exciplex hosts for deep-blue OLEDs have not yet been reported because of the difficulties in identifying suitable molecules. Here, we report a deep-blue-emitting exciplex system with an exciplex energy of 3.0 eV. It is composed of a carbazole-based hole-transporting material (mCP) and a phosphine-oxide-based electron-transporting material (BM-A10). The blue PhOLEDs exhibited maximum external quantum efficiency of 24% with CIE coordinates of (0.15, 0.21) and longer lifetime than the single host devices.

Highly efficient deep-blue organic light emitting diode with a carbazole based fluorescent emitter

NASA Astrophysics Data System (ADS)

Sahoo, Snehasis; Dubey, Deepak Kumar; Singh, Meenu; Joseph, Vellaichamy; Thomas, K. R. Justin; Jou, Jwo-Huei

2018-04-01

High efficiency deep-blue emission is essential to realize energy-saving, high-quality display and lighting applications. We demonstrate here a deep-blue organic light emitting diode using a novel carbazole based fluorescent emitter 7-[4-(diphenylamino)phenyl]-9-(2-ethylhexyl)-9H-carbazole-2-carbonitrile (JV234). The solution processed resultant device shows a maximum luminance above 1,750 cd m-2 and CIE coordinates (0.15,0.06) with a 1.3 lm W-1 power efficiency, 2.0 cd A-1 current efficiency, and 4.1% external quantum efficiency at 100 cd m-2. The resulting deep-blue emission enables a greater than 100% color saturation. The high efficiency may be attributed to the effective host-to-guest energy transfer, suitable device architecture facilitating balanced carrier injection and low doping concentration preventing efficiency roll-off caused by concentration quenching.

Effect of delayed pMDI actuation on the lung deposition of a fixed-dose combination aerosol drug.

PubMed

Farkas, Árpád; Horváth, Alpár; Kerekes, Attila; Nagy, Attila; Kugler, Szilvia; Tamási, Lilla; Tomisa, Gábor

2018-06-07

Lack of coordination between the beginning of the inhalation and device triggering is one of the most frequent errors reported in connection with the use of pMDI devices. Earlier results suggested a significant loss in lung deposition as a consequence of late actuation. However, most of our knowledge on the effect of poor synchronization is based on earlier works on CFC devices emitting large particles with high initial velocities. The aim of this study was to apply numerical techniques to analyse the effect of late device actuation on the lung dose of a HFA pMDI drug emitting high fraction of extrafine particles used in current asthma and COPD therapy. A computational fluid and particle dynamics model was combined with stochastic whole lung model to quantify the amount of drug depositing in the extrathoracic airways and in the lungs. High speed camera measurements were also performed to characterize the emitted spray plume. Our results have shown that for the studied pMDI drug late actuation leads to reasonable loss in terms of lung dose, unless it happens in the second half of the inhalation period. Device actuation at the middle of the inhalation caused less than 25% lung dose reduction relative to the value characterizing perfect coordination, if the inhalation time was between 2-5 s and inhalation flow rate between 30-150 L/min. This dose loss is lower than the previously known values of CFC devices and further support the practice of triggering the device shortly after the beginning of the inhalation instead of forcing a perfect synchronization and risking mishandling and poor drug deposition. Copyright © 2018. Published by Elsevier B.V.

Metalorganic vapor phase epitaxial growth of red and infrared vertical-cavity surface-emitting laser diodes

NASA Astrophysics Data System (ADS)

Schneider, R. P.; Lott, J. A.; Lear, K. L.; Choquette, K. D.; Crawford, M. H.; Kilcoyne, S. P.; Figiel, J. J.

1994-12-01

Metalorganic vapor phase epitaxy (MOVPE) is used for the growth of vertical-cavity surface-emitting laser (VCSEL) diodes. MOVPE exhibits a number of important advantages over the more commonly-used molecular-beam epitaxial (MBE) techniques, including ease of continuous compositional grading and carbon doping for low-resistance p-type distributed Bragg reflectors (DBRs), higher growth rates for rapid throughput and greater versatility in choice of materials and dopants. Planar gain-guided red VCSELs based on AlGaInP/AlGaAs heterostructures lase continuous-wave at room temperature, with voltage thresholds between 2.5 and 3 V and maximum power outputs of over 0.3 mW. Top-emitting infra-red (IR) VCSELs exhibit the highest power-conversion (wall-plug) efficiencies (21%), lowest threshold voltage (1.47 V), and highest single mode power (4.4 mW from an 8 μm device) yet reported. These results establish MOVPE as a preferred growth technique for this important new family of photonic devices.

Ultra-thin ohmic contacts for p-type nitride light emitting devices

DOEpatents

Raffetto, Mark; Bharathan, Jayesh; Haberern, Kevin; Bergmann, Michael; Emerson, David; Ibbetson, James; Li, Ting

2014-06-24

A flip-chip semiconductor based Light Emitting Device (LED) can include an n-type semiconductor substrate and an n-type GaN epi-layer on the substrate. A p-type GaN epi-layer can be on the n-type GaN epi-layer and a metal ohmic contact p-electrode can be on the p-type GaN epi-layer, where the metal ohmic contact p-electrode can have an average thickness less than about 25 .ANG.. A reflector can be on the metal ohmic contact p-electrode and a metal stack can be on the reflector. An n-electrode can be on the substrate opposite the n-type GaN epi-layer and a bonding pad can be on the n-electrode.

Lambertian white top-emitting organic light emitting device with carbon nanotube cathode

NASA Astrophysics Data System (ADS)

Freitag, P.; Zakhidov, Al. A.; Luessem, B.; Zakhidov, A. A.; Leo, K.

2012-12-01

We demonstrate that white organic light emitting devices (OLEDs) with top carbon nanotube (CNT) electrodes show almost no microcavity effect and exhibit essentially Lambertian emission. CNT top electrodes were applied by direct lamination of multiwall CNT sheets onto white small molecule OLED stack. The devices show an external quantum efficiency of 1.5% and high color rendering index of 70. Due to elimination of the cavity effect, the devices show good color stability for different viewing angles. Thus, CNT electrodes are a viable alternative to thin semitransparent metallic films, where the strong cavity effect causes spectral shift and non-Lambertian angular dependence. Our method of the device fabrication is simple yet effective and compatible with virtually any small molecule organic semiconductor stack. It is also compatible with flexible substrates and roll-to-roll fabrication.

Long-lived efficient delayed fluorescence organic light-emitting diodes using n-type hosts.

PubMed

Cui, Lin-Song; Ruan, Shi-Bin; Bencheikh, Fatima; Nagata, Ryo; Zhang, Lei; Inada, Ko; Nakanotani, Hajime; Liao, Liang-Sheng; Adachi, Chihaya

2017-12-21

Organic light-emitting diodes have become a mainstream display technology because of their desirable features. Third-generation electroluminescent devices that emit light through a mechanism called thermally activated delayed fluorescence are currently garnering much attention. However, unsatisfactory device stability is still an unresolved issue in this field. Here we demonstrate that electron-transporting n-type hosts, which typically include an acceptor moiety in their chemical structure, have the intrinsic ability to balance the charge fluxes and broaden the recombination zone in delayed fluorescence organic electroluminescent devices, while at the same time preventing the formation of high-energy excitons. The n-type hosts lengthen the lifetimes of green and blue delayed fluorescence devices by > 30 and 1000 times, respectively. Our results indicate that n-type hosts are suitable to realize stable delayed fluorescence organic electroluminescent devices.

Semiconductor crystal high resolution imager

NASA Technical Reports Server (NTRS)

Matteson, James (Inventor); Levin, Craig S. (Inventor)

2011-01-01

A radiation imaging device (10). The radiation image device (10) comprises a subject radiation station (12) producing photon emissions (14), and at least one semiconductor crystal detector (16) arranged in an edge-on orientation with respect to the emitted photons (14) to directly receive the emitted photons (14) and produce a signal. The semiconductor crystal detector (16) comprises at least one anode and at least one cathode that produces the signal in response to the emitted photons (14).

Methodological comparison on OLED and OLET fabrication

NASA Astrophysics Data System (ADS)

Suppiah, Sarveshvaran; Hambali, Nor Azura Malini Ahmad; Wahid, Mohamad Halim Abd; Retnasamy, Vithyacharan; Shahimin, Mukhzeer Mohamad

2018-02-01

The potential of organic semiconductor devices for light generation is demonstrated by the commercialization of display technologies based on organic light emitting diode (OLED). In OLED, organic materials play the role of light emission once the current is passed through. However, OLED do have major drawbacks whereby it suffers from photon loss and exciton quenching. Organic light emitting transistor (OLET) emerged as the new technology to compensate the efficiency and brightness loss encountered in OLED. The structure has combinational capability to switch the electronic signal such as the field effect transistor (FET) as well as light generation. The aim of this study is to methodologically compare and contrast fabrication process and evaluate feasibility of both organic light emitting diode (OLED) and organic light emitting transistor (OLET). The proposed light emitting layer in this study is poly [2-methoxy-5- (2'-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV).

Solution-Grown ZnO Films toward Transparent and Smart Dual-Color Light-Emitting Diode.

PubMed

Huang, Xiaohu; Zhang, Li; Wang, Shijie; Chi, Dongzhi; Chua, Soo Jin

2016-06-22

An individual light-emitting diode (LED) capable of emitting different colors of light under different bias conditions not only allows for compact device integration but also extends the functionality of the LED beyond traditional illumination and display. Herein, we report a color-switchable LED based on solution-grown n-type ZnO on p-GaN/n-GaN heterojunction. The LED emits red light with a peak centered at ∼692 nm and a full width at half-maximum of ∼90 nm under forward bias, while it emits green light under reverse bias. These two lighting colors can be switched repeatedly by reversing the bias polarity. The bias-polarity-switched dual-color LED enables independent control over the lighting color and brightness of each emission with two-terminal operation. The results offer a promising strategy toward transparent, miniaturized, and smart LEDs, which hold great potential in optoelectronics and optical communication.

Fully solution-processed organic light-emitting electrochemical cells (OLEC) with inkjet-printed micro-lenses for disposable lab-on-chip applications at ambient conditions

NASA Astrophysics Data System (ADS)

Shu, Zhe; Pabst, Oliver; Beckert, Erik; Eberhardt, Ramona; Tünnermann, Andreas

2016-02-01

Microfluidic lab-on-chip devices can be used for chemical and biological analyses such as DNA tests or environmental monitoring. Such devices integrate most of the basic functionalities needed for scientific analysis on a microfluidic chip. When using such devices, cost and space-intensive lab equipment is no longer necessary. However, in order to make a monolithic and cost-efficient/disposable microfluidic sensing device, direct integration of the excitation light source for fluorescent sensing is often required. To achieve this, we introduce a fully solution processable deviation of OLEDs, organic light-emitting electrochemical cells (OLECs), as a low-cost excitation light source for a disposable microfluidic sensing platform. By mixing metal ions and a solid electrolyte with light-emitting polymers as active materials, an in-situ doping and in-situ PN-junction can be generated within a three layer sandwich device. Thanks to this doping effect, work function adaptation is not necessary and air-stable electrode can be used. An ambient manufacturing process for fully solution-processed OLECs is presented, which consist of a spin-coated blue light-emitting polymer plus dopants on an ITO cathode and an inkjet-printed PEDOT:PSS transparent top anode. A fully transparent blue OLEC is able to obtain light intensity > 2500 cd/m2 under pulsed driving mode and maintain stable after 1000 cycles, which fulfils requirements for simple fluorescent on-chip sensing applications. However, because of the large refractive index difference between substrates and air, about 80% of emitted light is trapped inside the device. Therefore, inkjet printed micro-lenses on the rear side are introduced here to further increase light-emitting brightness.

Effect of Li2O/Al cathode in Alq3 based organic light-emitting diodes.

PubMed

Shin, Eun Chul; Ahn, Hui Chul; Han, Wone Keun; Kim, Tae Wan; Lee, Won Jae; Hong, Jin Woong; Chung, Dong Hoe; Song, Min Jong

2008-09-01

An effect of bilayer cathode Li20/Al was studied in Alq3 based organic light-emitting diodes with a variation of Li2O layer thickness. The current-luminance-voltage characteristics of ITO/TPD/Alq3/Li2O/Al device were measured at ambient condition to investigate the effect of Li2O/Al. It was found that when the thickness of Li2O layer is in the range of 0.5-1 nm, there are improvements in luminance, efficiency, and turn-on voltage of the device. A current density and a luminance are increased by about 100 times, a turn-on voltage is lowered from 6 V to 3 V, a maximum current efficiency is improved by a factor of 2.3, and a maximum power efficiency is improved by a factor of 3.2 for a device with a use of thin Li2O layer compared to those of the one without the Li2Otron-barrier height for electron injection from the cathode to the emissive layer.

Atom Probe Tomography Analysis of Gallium-Nitride-Based Light-Emitting Diodes

NASA Astrophysics Data System (ADS)

Prosa, Ty J.; Olson, David; Giddings, A. Devin; Clifton, Peter H.; Larson, David J.; Lefebvre, Williams

2014-03-01

Thin-film light-emitting diodes (LEDs) composed of GaN/InxGa1-xN/GaN quantum well (QW) structures are integrated into modern optoelectronic devices because of the tunable InGaN band-gap enabling emission of the full visible spectrum. Atom probe tomography (APT) offers unique capabilities for 3D device characterization including compositional mapping of nano-volumes (>106 nm3) , high detection efficiency (>50%), and good sensitivity. In this study, APT is used to understand the distribution of dopants as well as Al and In alloying agents in a GaN device. Measurements using transmission electron microscopy (TEM) and secondary ion mass spectrometry (SIMS) have also been made to improve the accuracy of the APT analysis by correlating the information content of these complimentary techniques. APT analysis reveals various QW and other optoelectronic structures including a Mg p-GaN layer, an Al-rich electron blocking layer, an In-rich multi-QW region, and an In-based super-lattice structure. The multi-QW composition shows good quantitative agreement with layer thickness and spacing extracted from a high resolution TEM image intensity analysis.

Quantum dot light emitting devices for photomedical applications.

PubMed

Chen, Hao; He, Juan; Lanzafame, Raymond; Stadler, Istvan; Hamidi, Hamid El; Liu, Hui; Celli, Jonathan; Hamblin, Michael R; Huang, Yingying; Oakley, Emily; Shafirstein, Gal; Chung, Ho-Kyoon; Wu, Shin-Tson; Dong, Yajie

2017-03-01

While OLEDs have struggled to find a niche lighting application that can fully take advantage of their unique form factors as thin, flexible, lightweight and uniformly large-area luminaire, photomedical researchers have been in search of low-cost, effective illumination devices with such form factors that could facilitate widespread clinical applications of photodynamic therapy (PDT) or photobiomodulation (PBM). Although existing OLEDs with either fluorescent or phosphorescent emitters cannot achieve the required high power density at the right wavelength windows for photomedicine, the recently developed ultrabright and efficient deep red quantum dot light emitting devices (QLEDs) can nicely fit into this niche. Here, we report for the first time the in-vitro study to demonstrate that this QLED-based photomedical approach could increase cell metabolism over control systems for PBM and kill cancerous cells efficiently for PDT. The perspective of developing wavelength-specific, flexible QLEDs for two critical photomedical fields (wound repair and cancer treatment) will be presented with their potential impacts summarized. The work promises to generate flexible QLED-based light sources that could enable the widespread use and clinical acceptance of photomedical strategies including PDT and PBM.

Quantum dot light emitting devices for photomedical applications

PubMed Central

Chen, Hao; He, Juan; Lanzafame, Raymond; Stadler, Istvan; Hamidi, Hamid El; Liu, Hui; Celli, Jonathan; Hamblin, Michael R.; Huang, Yingying; Oakley, Emily; Shafirstein, Gal; Chung, Ho-Kyoon; Wu, Shin-Tson; Dong, Yajie

2017-01-01

While OLEDs have struggled to find a niche lighting application that can fully take advantage of their unique form factors as thin, flexible, lightweight and uniformly large-area luminaire, photomedical researchers have been in search of low-cost, effective illumination devices with such form factors that could facilitate widespread clinical applications of photodynamic therapy (PDT) or photobiomodulation (PBM). Although existing OLEDs with either fluorescent or phosphorescent emitters cannot achieve the required high power density at the right wavelength windows for photomedicine, the recently developed ultrabright and efficient deep red quantum dot light emitting devices (QLEDs) can nicely fit into this niche. Here, we report for the first time the in-vitro study to demonstrate that this QLED-based photomedical approach could increase cell metabolism over control systems for PBM and kill cancerous cells efficiently for PDT. The perspective of developing wavelength-specific, flexible QLEDs for two critical photomedical fields (wound repair and cancer treatment) will be presented with their potential impacts summarized. The work promises to generate flexible QLED-based light sources that could enable the widespread use and clinical acceptance of photomedical strategies including PDT and PBM. PMID:28867926

Flat panel ferroelectric electron emission display system

DOEpatents

Sampayan, S.E.; Orvis, W.J.; Caporaso, G.J.; Wieskamp, T.F.

1996-04-16

A device is disclosed which can produce a bright, raster scanned or non-raster scanned image from a flat panel. Unlike many flat panel technologies, this device does not require ambient light or auxiliary illumination for viewing the image. Rather, this device relies on electrons emitted from a ferroelectric emitter impinging on a phosphor. This device takes advantage of a new electron emitter technology which emits electrons with significant kinetic energy and beam current density. 6 figs.

The Physics of Ultracold Sr2 Molecules: Optical Production and Precision Measurement

NASA Astrophysics Data System (ADS)

Osborn, Christopher Butler

Colloidal quantum dots have desirable optical properties which can be exploited to realize a variety of photonic devices and functionalities. However, colloidal dots have not had a pervasive utility in photonic devices because of the absence of patterning methods. The electronic chip industry is highly successful due to the well-established lithographic procedures. In this thesis we borrow ideas from the semiconductor industry to develop lithographic techniques that can be used to pattern colloidal quantum dots while ensuring that the optical properties of the quantum dots are not affected by the process. In this thesis we have developed colloidal quantum dot based waveguide structures for amplification and switching applications for all-optical signal processing. We have also developed colloidal quantum dot based light emitting diodes. We successfully introduced CdSe/ZnS quantum dots into a UV curable photo-resist, which was then patterned to realize active devices. In addition, "passive" devices (devices without quantum dots) were integrated to "active" devices via waveguide couplers. Use of photo-resist devices offers two distinct advantages. First, they have low scattering loss and secondly, they allow good fiber to waveguide coupling efficiency due to the low refractive index which allows for large waveguide cross-sections while supporting single mode operation. Practical planar photonic devices and circuits incorporating both active and passive structures can now be realized, now that we have patterning capabilities of quantum dots while maintaining the original optical attributes of the system. In addition to the photo-resist host, we also explored the incorporation of colloidal quantum dots into a dielectric silicon dioxide and silicon nitride one-dimensional microcavity structures using low temperature plasma enhanced chemical vapor deposition. This material system can be used to realize microcavity light emitting diodes that can be realized on any substrate. As a proof of concept demonstration we show a 1550 nm emitting all-dielectric vertical cavity structure embedded with PbS quantum dots. Enhancement in spontaneous emission from the dots embedded in the microcavity is also demonstrated.

A Laboratory-Based Course in Display Technology

ERIC Educational Resources Information Center

Sarik, J.; Akinwande, A. I.; Kymissis, I.

2011-01-01

A laboratory-based class in flat-panel display technology is presented. The course introduces fundamental concepts of display systems and reinforces these concepts through the fabrication of three display devices--an inorganic electroluminescent seven-segment display, a dot-matrix organic light-emitting diode (OLED) display, and a dot-matrix…

Harvesting Triplet Excitons with Exciplex Thermally Activated Delayed Fluorescence Emitters toward High Performance Heterostructured Organic Light-Emitting Field Effect Transistors.

PubMed

Song, Li; Hu, Yongsheng; Liu, Zheqin; Lv, Ying; Guo, Xiaoyang; Liu, Xingyuan

2017-01-25

The utilization of triplet excitons plays a key role in obtaining high emission efficiency for organic electroluminescent devices. However, to date, only phosphorescent materials have been implemented to harvest the triplet excitons in the organic light-emitting field effect transistors (OLEFETs). In this work, we report the first incorporation of exciplex thermally activated delayed fluorescence (TADF) emitters in heterostructured OLEFETs to harvest the triplet excitons. By developing a new kind of exciplex TADF emitter constituted by m-MTDATA (4,4',4″-tris(N-3-methylphenyl-N-phenylamino)triphenylamine) as the donor and OXD-7 (1,3-bis[2-(4-tert-butylphenyl)-1,3,4-oxadiazo-5-yl]benzene) as the acceptor, an exciton utilization efficiency of 74.3% for the devices was achieved. It is found that the injection barrier between hole transport layer and emission layer as well as the ratio between donor and acceptor would influence the external quantum efficiency (EQE) significantly. Devices with a maximum EQE of 3.76% which is far exceeding the reported results for devices with conventional fluorescent emitters were successfully demonstrated. Moreover, the EQE at high brightness even outperformed the result for organic light-emitting diode based on the same emitter. Our results demonstrate that the exciplex TADF emitters can be promising candidates to develop OLEFETs with high performance.

Infrared detector device inspection system

DOEpatents

Soehnel, Grant; Bender, Daniel A.

2016-08-09

Methods and apparatuses for identifying carrier lifetimes are disclosed herein. In a general embodiment, a beam of light is sent to a group of locations on a material for an optical device. Photons emitted from the material are detected at each of the group of locations. A carrier lifetime is identified for each of the group of locations based on the photons detected from each of the group of locations.

White organic light-emitting devices with high color purity and stability

NASA Astrophysics Data System (ADS)

Bai, Yajie; Liu, Su; Li, Hairong; Liu, Chunjuan; Wang, Jinshun; Chang, Jinxian

2014-04-01

A white organic light-emitting device (WOLED) with dual-emitting layers was presented, in which the blue fluorescent dye 2,5,8,11-terta-tertbutylperylene (TBPe) was doped in 2-methyl-9, 10-di(2-naphthyl)-anthracene (MADN) as a blue-emitting layer, while 5,6,11,12-tetraphenylnaphthacene (rubrene, Rb) was doped in the above-mentioned materials as a yellow-emitting layer. The fabricated monochromatic devices using the blue- and yellow-emitting layer have demonstrated that the direct charge trapping mechanism is the dominant emission mechanism in the yellow OLED. Studies on the WOLEDs with dual-emitting layers have shown that the performances of these devices are strongly susceptible to the thickness of the emitting layer and the stack order of two emitting layers. Structure of ITO(160 nm)/NPB(30 nm)/MADN: 5 wt%TBPe: 3 wt%Rb(10 nm)/MADN: 5 wt%TBPe(20 nm)/BCP (10 nm)/Alq3(20 nm)/Al(100 nm) was determined to be the most favorable WOLED. The maximum luminance of 16 000 cd cm-2 at the applied voltage of 13.4 V and Commission International de 1‧Eclairage (CIE) coordinates of (0.3263, 0.3437) which is closer to the standard white light (CIE (0.33, 0.33)) than the most recent reported WOLEDs were obtained. Moreover, there is just slight variation of CIE coordinates (ΔCIEx, y = 0.0171, 0.0167; corresponding Δu‧v‧ = 0.0119) when the current density increases from 10 to 100 mA cm-2. It reveals that the emissive dopant Rb acts as charge traps to improve electron-hole balance, provides sites for electron-hole recombination and thus makes carriers distribute more evenly in the dual-emitting layers which broaden the recombination zone and improve the stability of the CIE coordinates.

Highly efficient inverted top emitting organic light emitting diodes using a transparent top electrode with color stability on viewing angle

NASA Astrophysics Data System (ADS)

Kim, Jung-Bum; Lee, Jeong-Hwan; Moon, Chang-Ki; Kim, Jang-Joo

2014-02-01

We report a highly efficient phosphorescent green inverted top emitting organic light emitting diode with excellent color stability by using the 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile/indium zinc oxide top electrode and bis(2-phenylpyridine)iridium(III) acetylacetonate as the emitter in an exciplex forming co-host system. The device shows a high external quantum efficiency of 23.4% at 1000 cd/m2 corresponding to a current efficiency of 110 cd/A, low efficiency roll-off with 21% at 10 000 cd/m2 and low turn on voltage of 2.4 V. Especially, the device showed very small color change with the variation of Δx = 0.02, Δy = 0.02 in the CIE 1931 coordinates as the viewing angle changes from 0° to 60°. The performance of the device is superior to that of the metal/metal cavity structured device.

Amine-Based Passivating Materials for Enhanced Optical Properties and Performance of Organic-Inorganic Perovskites in Light-Emitting Diodes.

PubMed

Lee, Seungjin; Park, Jong Hyun; Lee, Bo Ram; Jung, Eui Dae; Yu, Jae Choul; Di Nuzzo, Daniele; Friend, Richard H; Song, Myoung Hoon

2017-04-20

The use of hybrid organic-inorganic perovskites in optoelectronic applications are attracting an interest because of their outstanding characteristics, which enable a remarkable enhancement of device efficiency. However, solution-processed perovskite crystals unavoidably contain defect sites that cause hysteresis in perovskite solar cells (PeSCs) and blinking in perovskite light-emitting diodes (PeLEDs). Here, we report significant beneficial effects using a new treatment based on amine-based passivating materials (APMs) to passivate the defect sites of methylammonium lead tribromide (MAPbBr 3 ) through coordinate bonding between the nitrogen atoms and undercoordinated lead ions. This treatment greatly enhanced the PeLED's efficiency, with an external quantum efficiency (EQE) of 6.2%, enhanced photoluminescence (PL), a lower threshold for amplified spontaneous emission (ASE), a longer PL lifetime, and enhanced device stability. Using confocal microscopy, we observed the cessation of PL blinking in perovskite films treated with ethylenediamine (EDA) due to passivation of the defect sites in the MAPbBr 3 .

ZnO nanowire-based light-emitting diodes with tunable emission from near-UV to blue

NASA Astrophysics Data System (ADS)

Pauporté, Thierry; Lupan, Oleg; Viana, Bruno; le Bahers, T.

2013-03-01

Nanowires (NWs)-based light emitting diodes (LEDs) have drawn large interest due to many advantages compared to thin film based devices. We have successfully prepared epitaxial n-ZnO(NW)/p-GaN heterojunctions using low temperature soft electrochemical techniques. The structures have been used in LED devices and exhibited highly interesting performances. Moreover, the bandgap of ZnO has been tuned by Cu or Cd doping at controlled atomic concentration. A result was the controlled shift of the LED emission in the visible spectral wavelength region. Using DFT computing calculations, we have also shown that the bandgap narrowing has two different origins for Zn1-xCdxO (ZnO:Cd) and ZnO:Cu. In the first case, it is due to the crystal lattice expansion, whereas in the second case Cu-3d donor and Cu-3d combined to O-2p acceptor bands appear in the bandgap which broadnesses increase with the dopant concentration. This leads to the bandgap reduction.

Physically transient photonics: random versus distributed feedback lasing based on nanoimprinted DNA.

PubMed

Camposeo, Andrea; Del Carro, Pompilio; Persano, Luana; Cyprych, Konrad; Szukalski, Adam; Sznitko, Lech; Mysliwiec, Jaroslaw; Pisignano, Dario

2014-10-28

Room-temperature nanoimprinted, DNA-based distributed feedback (DFB) laser operation at 605 nm is reported. The laser is made of a pure DNA host matrix doped with gain dyes. At high excitation densities, the emission of the untextured dye-doped DNA films is characterized by a broad emission peak with an overall line width of 12 nm and superimposed narrow peaks, characteristic of random lasing. Moreover, direct patterning of the DNA films is demonstrated with a resolution down to 100 nm, enabling the realization of both surface-emitting and edge-emitting DFB lasers with a typical line width of <0.3 nm. The resulting emission is polarized, with a ratio between the TE- and TM-polarized intensities exceeding 30. In addition, the nanopatterned devices dissolve in water within less than 2 min. These results demonstrate the possibility of realizing various physically transient nanophotonics and laser architectures, including random lasing and nanoimprinted devices, based on natural biopolymers.

High performance flexible top-emitting warm-white organic light-emitting devices and chromaticity shift mechanism

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shi, Hongying; Deng, Lingling; Chen, Shufen, E-mail: iamsfchen@njupt.edu.cn, E-mail: wei-huang@njupt.edu.cn

2014-04-15

Flexible warm-white top-emitting organic light-emitting devices (TEOLEDs) are fabricated onto PET substrates with a simple semi-transparent cathode Sm/Ag and two-color phosphors respectively doped into a single host material TCTA. By adjusting the relative position of the orange-red EML sandwiched between the blue emitting layers, the optimized device exhibits the highest power/current efficiency of 8.07 lm/W and near 13 cd/A, with a correlated color temperature (CCT) of 4105 K and a color rendering index (CRI) of 70. In addition, a moderate chromaticity variation of (-0.025, +0.008) around warm white illumination coordinates (0.45, 0.44) is obtained over a large luminance range ofmore » 1000 to 10000 cd/m{sup 2}. The emission mechanism is discussed via delta-doping method and single-carrier device, which is summarized that the carrier trapping, the exciton quenching, the mobility change and the recombination zone alteration are negative to color stability while the energy transfer process and the blue/red/blue sandwiched structure are contributed to the color stability in our flexible white TEOLEDs.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lombigit, L., E-mail: lojius@nm.gov.my; Rahman, Nur Aira Abd; Mohamad, Glam Hadzir Patai

A radioisotope identifier device based on large volume Co-planar grid CZT detector is current under development at Malaysian Nuclear Agency. This device is planned to be used for in-situ identification of radioisotopes based on their unique energies. This work reports on electronics testing performed on the front-end electronics (FEE) analog section comprising charge sensitive preamplifier-pulse shaping amplifier chain. This test involves measurement of charge sensitivity, pulse parameters and electronics noise. This report also present some preliminary results on the spectral measurement obtained from gamma emitting radioisotopes.

Light source comprising a common substrate, a first led device and a second led device

DOEpatents

Choong, Vi-En

2010-02-23

At least one stacked organic or polymeric light emitting diode (PLEDs) devices to comprise a light source is disclosed. At least one of the PLEDs includes a patterned cathode which has regions which transmit light. The patterned cathodes enable light emission from the PLEDs to combine together. The light source may be top or bottom emitting or both.

Effect of device design on the aerosolization of a carrier-based dry powder inhaler--a case study on Aerolizer(®) Foradile (®).

PubMed

Zhou, Qi Tony; Tong, Zhenbo; Tang, Patricia; Citterio, Mauro; Yang, Runyu; Chan, Hak-Kim

2013-04-01

The objective of this study is to investigate the effect of device design of the Aerolizer(®) on the aerosolization of a carrier-based dry powder inhaler formulation (Foradile(®)). The Aerolizer was modified by reducing the air inlet size and mouthpiece length to 1/3 of the original dimensions, or by increasing the grid voidage. Aerosolization of the powder formulation was assessed on a multi-stage liquid impinger at air flow rates of 30, 60, and 100 L/min. Coupled CFD-DEM simulations were performed to investigate the air flow pattern and particle impaction. There was no significant difference in the aerosolization behavior between the original and 1/3 mouthpiece length devices. Significant increases in FPF total and FPF emitted were demonstrated when the inlet size was reduced, and the results were explained by the increases in air velocity and turbulence from the CFD analysis. No significant differences were shown in FPF total and FPF emitted when the grid voidage was increased, but more drugs were found to deposit in induction port and to a lesser extent, the mouthpiece. This was supported by the CFD-DEM analysis which showed the particle-device collisions mainly occurred in the inhaler chamber, and the cross-grid design increased the particle-device collisions on both mouthpiece and induction port. The air inlet size and grid structure of the Aerolizer(®) were found to impact significantly on the aerosolization of the carrier-based powder.

DNA bases thymine and adenine in bio-organic light emitting diodes.

PubMed

Gomez, Eliot F; Venkatraman, Vishak; Grote, James G; Steckl, Andrew J

2014-11-24

We report on the use of nucleic acid bases (NBs) in organic light emitting diodes (OLEDs). NBs are small molecules that are the basic building blocks of the larger DNA polymer. NBs readily thermally evaporate and integrate well into the vacuum deposited OLED fabrication. Adenine (A) and thymine (T) were deposited as electron-blocking/hole-transport layers (EBL/HTL) that resulted in increases in performance over the reference OLED containing the standard EBL material NPB. A-based OLEDs reached a peak current efficiency and luminance performance of 48 cd/A and 93,000 cd/m(2), respectively, while T-based OLEDs had a maximum of 76 cd/A and 132,000 cd/m(2). By comparison, the reference OLED yielded 37 cd/A and 113,000 cd/m(2). The enhanced performance of T-based devices is attributed to a combination of energy levels and structured surface morphology that causes more efficient and controlled hole current transport to the emitting layer.

Development of 8-hydroxyquinoline metal based organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Feng, Xiaodong

Because of its potential application for flat panel displays, solid-state lighting and 1.5 mum emitter for fiber optical communications, organic light-emitting diodes (OLEDs) have been intensively researched. One of the major problems with current OLED technology relates to inefficient electron injection at the cathode interface, which causes high driving voltage and poor device stability. Making a low resistance cathode contact for electron injection is critical to device performance. This work mainly focuses on cathode interface design and engineering. The Ohmic contact using a structure of C60/LiF/Al has been developed in electron only devices. It is found that application of the C60/LiF/Al contact to Alq based OLEDs leads to a dramatic reduction in driving voltages, a significant improvement in power efficiency, and a much slower aging process. A new cathode structure based on metal-organic-metal (MOM) tri-layer films has been developed. It is found that MOM cathodes reduce reflection by deconstructive optical interference from two metal films. The absolute reflectance from the MOM tr-ilayer films can be reduced to as low as 7% in the visible light spectrum. In actual working devices, the reflectance can be reduced from ˜80% to ˜20%. MOM cathodes provide a potential low-cost solution for high contrast full-color OLED displays. Low voltage Erq based OLEDs at 1.5 mum emission have been developed. The Erq/Ag cathode interface has been found to be efficient for electron injection. Dramatic improvement in driving voltage and power efficiency has been realized by implementing Bphen and C60 into Erq devices as an electron transport layer. Integration of Erq devices on Si wafers has also been demonstrated.

76 FR 11789 - Agency Information Collection Activities; Announcement of Office of Management and Budget...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-03-03

... DEPARTMENT OF HEALTH AND HUMAN SERVICES Food and Drug Administration [Docket No. FDA-2010-N-0344...; Testing Communications on Medical Devices and Radiation-Emitting Products AGENCY: Food and Drug... collection of information entitled ``Testing Communications on Medical Devices and Radiation-Emitting...

Amplified Thermionic Cooling Using Arrays of Nanowires

NASA Technical Reports Server (NTRS)

Yang, Eui-Hyeok; Choi, Daniel; Shcheglov, Kirill; Hishinuma, Yoshikazu

2007-01-01

A class of proposed thermionic cooling devices would incorporate precise arrays of metal nanowires as electron emitters. The proposed devices could be highly miniaturized, enabling removal of heat from locations, very close to electronic devices, that have previously been inaccessible for heat-removal purposes. The resulting enhancement of removal of heat would enable operation of the devices at higher power levels and higher clock speeds. Moreover, the mass, complexity, and bulk of electronic circuitry incorporating these highly miniaturized cooling devices could be considerably reduced, relative to otherwise equivalent circuitry cooled by conventional electromechanical, thermoelectric, and fluidic means. In thermionic cooling, one exploits the fact that because only the highest-energy electrons are thermionically emitted, collecting those electrons to prevent their return to the emitting electrode results in the net removal of heat from that electrode. Collection is effected by applying an appropriate positive bias potential to another electrode placed near the emitting electrode. The concept underlying the proposal is that the thermionic-emission current and, hence, the cooling effect attainable by use of an array of nanowires could be significantly greater than that attainable by use of a single emitting electrode or other electron- emitting surface. The wires in an array according to the proposal would protrude perpendicularly from a planar surface and their heights would be made uniform to within a sub-nanometer level of precision

Highly efficient solution-processed phosphorescent organic light-emitting devices with double-stacked hole injection layers

NASA Astrophysics Data System (ADS)

Chen, Yuehua; Hao, Lin; Zhang, Xinwen; Zhang, Xiaolin; Liu, Mengjiao; Zhang, Mengke; Wang, Jiong; Lai, Wen-Yong; Huang, Wei

2017-08-01

In this paper, solution-processed nickel oxide (NiOx) is used as hole-injection layers (HILs) in solution-processed phosphorescent organic light-emitting diodes (PhOLEDs). Serious exciton quenching is verified at the NiOx/emitting layer (EML) interface, resulting in worse device performance. The device performance is significantly improved by inserting a layer of poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid) (PEDOT:PSS) between the EML and NiOx. The solution-processed blue PhOLED with the double-stacked NiOx/PEDOT:PSS HILs shows a maximum current efficiency of 30.5 cd/A, which is 75% and 30% higher than those of the devices with a single NiOx HIL and a PEDOT:PSS HIL, respectively. Improvement of device efficiency can be attributed to reducing exciton quenching of the PEDOT:PSS layer as well as the electron blocking effect of the NiOx layer.

Light up-conversion from near-infrared to blue using a photoresponsive organic light-emitting device

NASA Astrophysics Data System (ADS)

Chikamatsu, Masayuki; Ichino, Yoshiro; Takada, Noriyuki; Yoshida, Manabu; Kamata, Toshihide; Yase, Kiyoshi

2002-07-01

A photoresponsive organic light-emitting device combining blue-emitting organic electroluminescent (EL) diode with titanyl phthalocyanine as a near-infrared (IR) sensitive layer was fabricated. By irradiating near-IR light to the device, blue emission occurred in the lower drive voltage (between 5 and 12 V). The result indicates that the device acts as a light switch and/or an up-converter from near-IR light (1.6 eV) to blue (2.6 eV). The EL response times of rise and decay using a near-IR light trigger were 260 and 330 mus, respectively. At a higher voltage (above 12 V), enhancement of blue emission was observed with near-IR light irradiation. The ON/OFF ratio reached a maximum of 103.

In Situ Preparation of Metal Halide Perovskite Nanocrystal Thin Films for Improved Light-Emitting Devices.

PubMed

Zhao, Lianfeng; Yeh, Yao-Wen; Tran, Nhu L; Wu, Fan; Xiao, Zhengguo; Kerner, Ross A; Lin, YunHui L; Scholes, Gregory D; Yao, Nan; Rand, Barry P

2017-04-25

Hybrid organic-inorganic halide perovskite semiconductors are attractive candidates for optoelectronic applications, such as photovoltaics, light-emitting diodes, and lasers. Perovskite nanocrystals are of particular interest, where electrons and holes can be confined spatially, promoting radiative recombination. However, nanocrystalline films based on traditional colloidal nanocrystal synthesis strategies suffer from the use of long insulating ligands, low colloidal nanocrystal concentration, and significant aggregation during film formation. Here, we demonstrate a facile method for preparing perovskite nanocrystal films in situ and that the electroluminescence of light-emitting devices can be enhanced up to 40-fold through this nanocrystal film formation strategy. Briefly, the method involves the use of bulky organoammonium halides as additives to confine crystal growth of perovskites during film formation, achieving CH 3 NH 3 PbI 3 and CH 3 NH 3 PbBr 3 perovskite nanocrystals with an average crystal size of 5.4 ± 0.8 nm and 6.4 ± 1.3 nm, respectively, as confirmed through transmission electron microscopy measurements. Additive-confined perovskite nanocrystals show significantly improved photoluminescence quantum yield and decay lifetime. Finally, we demonstrate highly efficient CH 3 NH 3 PbI 3 red/near-infrared LEDs and CH 3 NH 3 PbBr 3 green LEDs based on this strategy, achieving an external quantum efficiency of 7.9% and 7.0%, respectively, which represent a 40-fold and 23-fold improvement over control devices fabricated without the additives.

Light-emitting device test systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

McCord, Mark; Brodie, Alan; George, James

Light-emitting devices, such as LEDs, are tested using a photometric unit. The photometric unit, which may be an integrating sphere, can measure flux, color, or other properties of the devices. The photometric unit may have a single port or both an inlet and outlet. Light loss through the port, inlet, or outlet can be reduced or calibrated for. These testing systems can provide increased reliability, improved throughput, and/or improved measurement accuracy.

Highly efficient single-layer dendrimer light-emitting diodes with balanced charge transport

NASA Astrophysics Data System (ADS)

Anthopoulos, Thomas D.; Markham, Jonathan P. J.; Namdas, Ebinazar B.; Samuel, Ifor D. W.; Lo, Shih-Chun; Burn, Paul L.

2003-06-01

High-efficiency single-layer-solution-processed green light-emitting diodes based on a phosphorescent dendrimer are demonstrated. A peak external quantum efficiency of 10.4% (35 cd/A) was measured for a first generation fac-tris(2-phenylpyridine) iridium cored dendrimer when blended with 4,4'-bis(N-carbazolyl)biphenyl and electron transporting 1,3,5-tris(2-N-phenylbenzimidazolyl)benzene at 8.1 V. A maximum power efficiency of 12.8 lm/W was measured also at 8.1 V and 550 cd/m2. These results indicate that, by simple blending of bipolar and electron-transporting molecules, highly efficient light-emitting diodes can be made employing a very simple device structure.

Field strength measurements of speed measuring radar units

DOT National Transportation Integrated Search

1981-06-01

The objective of this project was to measure the microwave radiation emitted by speed measuring radar units to obtain a data base for evaluating the potential radiation hazards of these devices. Measurements were taken both in free-space and with the...

Nanocrystals for electronics.

PubMed

Panthani, Matthew G; Korgel, Brian A

2012-01-01

Semiconductor nanocrystals are promising materials for low-cost large-area electronic device fabrication. They can be synthesized with a wide variety of chemical compositions and size-tunable optical and electronic properties as well as dispersed in solvents for room-temperature deposition using various types of printing processes. This review addresses research progress in large-area electronic device applications using nanocrystal-based electrically active thin films, including thin-film transistors, light-emitting diodes, photovoltaics, and thermoelectrics.

Light-Emitting GaAs Nanowires on a Flexible Substrate.

PubMed

Valente, João; Godde, Tillmann; Zhang, Yunyan; Mowbray, David J; Liu, Huiyun

2018-06-18

Semiconductor nanowire-based devices are among the most promising structures used to meet the current challenges of electronics, optics and photonics. Due to their high surface-to-volume ratio and excellent optical and electrical properties, devices with low power, high efficiency and high density can be created. This is of major importance for environmental issues and economic impact. Semiconductor nanowires have been used to fabricate high performance devices, including detectors, solar cells and transistors. Here, we demonstrate a technique for transferring large-area nanowire arrays to flexible substrates while retaining their excellent quantum efficiency in emission. Starting with a defect-free self-catalyzed molecular beam epitaxy (MBE) sample grown on a Si substrate, GaAs core-shell nanowires are embedded in a dielectric, removed by reactive ion etching and transferred to a plastic substrate. The original structural and optical properties, including the vertical orientation, of the nanowires are retained in the final plastic substrate structure. Nanowire emission is observed for all stages of the fabrication process, with a higher emission intensity observed for the final transferred structure, consistent with a reduction in nonradiative recombination via the modification of surface states. This transfer process could form the first critical step in the development of flexible nanowire-based light-emitting devices.

Full-color OLED on silicon microdisplay

NASA Astrophysics Data System (ADS)

Ghosh, Amalkumar P.

2002-02-01

eMagin has developed numerous enhancements to organic light emitting diode (OLED) technology, including a unique, up- emitting structure for OLED-on-silicon microdisplay devices. Recently, eMagin has fabricated full color SVGA+ resolution OLED microdisplays on silicon, with over 1.5 million color elements. The display is based on white light emission from OLED followed by LCD-type red, green and blue color filters. The color filters are patterned directly on OLED devices following suitable thin film encapsulation and the drive circuits are built directly on single crystal silicon. The resultant color OLED technology, with hits high efficiency, high brightness, and low power consumption, is ideally suited for near to the eye applications such as wearable PCS, wireless Internet applications and mobile phone, portable DVD viewers, digital cameras and other emerging applications.

Polythiophene-fullerene based photodetectors: tuning of spectral response and application in photoluminescence based (bio)chemical sensors.

PubMed

Nalwa, Kanwar S; Cai, Yuankun; Thoeming, Aaron L; Shinar, Joseph; Shinar, Ruth; Chaudhary, Sumit

2010-10-01

A photoluminescence (PL)-based oxygen and glucose sensor utilizing inorganic or organic light emitting diode as the light source, and polythiophene: fullerene type bulk-heterojunction devices as photodetectors, for both intensity and decay-time based monitoring of the sensing element's PL. The sensing element is based on the oxygen-sensitive dye Pt-octaethylporphyrin embedded in a polystyrene matrix.

Enhancement of light output power of GaN-based light-emitting diodes with photonic quasi-crystal patterned on p-GaN surface and n-side sidewall roughing.

PubMed

Lai, Fang-I; Yang, Jui-Fu

2013-05-17

In this paper, GaN-based light-emitting diodes (LEDs) with photonic quasi-crystal (PQC) structure on p-GaN surface and n-side roughing by nano-imprint lithography are fabricated and investigated. At an injection current of 20 mA, the LED with PQC structure on p-GaN surface and n-side roughing increased the light output power of the InGaN/GaN multiple quantum well LEDs by a factor of 1.42, and the wall-plug efficiency is 26% higher than the conventional GaN-based LED type. After 500-h life test (55°C/50 mA), it was found that the normalized output power of GaN-based LED with PQC structure on p-GaN surface and n-side roughing only decreased by 6%. These results offer promising potential to enhance the light output powers of commercial light-emitting devices using the technique of nano-imprint lithography.

Distributed Bragg reflector tapered diode lasers emitting more than 10 W at 1154 nm

NASA Astrophysics Data System (ADS)

Feise, D.; Bugge, F.; Matalla, M.; Thies, A.; Ressel, P.; Blume, G.; Hofmann, J.; Paschke, K.

2018-02-01

Distributed Bragg reflector tapered diode lasers (DBR-TPL) emitting at 1154 nm are ideal light sources to be implemented into medical devices and hand-held tools for treatment in dermatology and ophthalmology at 577 nm due to their high spectral radiance enabling second harmonic generation from near infrared to yellow. In this work, we present DBR-TPLs which are able to emit more than 10 W in continuous-wave operation with a narrow spectral emission at 1154 nm and a very good beam quality providing excellent spectral radiance. The investigated DBRTPLs are based on three different epitaxial structures with varying vertical far field angles of 35°, 26°, and 17°. To optimize the coupling efficiency into non-linear crystals we studied DBR-TPL with a vertical far field angle of approx. 17° based on an asymmetrical super large optical cavity epitaxial structure. At a pump current of 18 A these devices are able to emit more than 9 W at 25°C and nearly 11 W at 10°C. The spectral emission is very narrow (ΔλFWHM = 18 pm) and single mode over the entire current range. While the beam quality factor M2 according to the 1/e2-level remains 1.1, the M2 according to second order moments deteriorates when the laser is pumped with higher currents. Therefore, the power content in the central lobe increases somewhat less rapidly than the total power.

III-nitride nanowire LEDs and diode lasers: monolithic light sources on (001) Si emitting in the 600-1300nm range

NASA Astrophysics Data System (ADS)

Bhattacharya, P.; Hazari, A.; Jahangir, S.

2018-02-01

GaN-based nanowire heterostructure arrays epitaxially grown on (001)Si substrates have unique properties and present the potential to realize useful devices. The active light-emitting region in the nanowire heterostructures are usually InGaN disks, whose composition can be varied to tune the emission wavelength. We have demonstrated light emitting diodes and edgeemitting diode lasers with power outputs 10mW with emission in the 600-1300nm wavelength range. These light sources are therefore useful for a variety of applications, including silicon photonics. Molecular beam epitaxial growth of the nanowire heterostructure arrays on (001)Si substrates and the characteristics of 1.3μm nanowire array edge emitting lasers, guided wave photodiodes and a monolithic photonic integrated circuit designed for 1.3μm operation are described.

Organic light-emitting diodes with direct contact-printed red, green, blue, and white light-emitting layers

NASA Astrophysics Data System (ADS)

Chen, Sun-Zen; Peng, Shiang-Hau; Ting, Tzu-Yu; Wu, Po-Shien; Lin, Chun-Hao; Chang, Chin-Yeh; Shyue, Jing-Jong; Jou, Jwo-Huei

2012-10-01

We demonstrate the feasibility of using direct contact-printing in the fabrication of monochromatic and polychromatic organic light-emitting diodes (OLEDs). Bright devices with red, green, blue, and white contact-printed light-emitting layers with a respective maximum luminance of 29 000, 29 000, 4000, and 18 000 cd/m2 were obtained with sound film integrity by blending a polymeric host into a molecular host. For the red OLED as example, the maximum luminance was decreased from 29 000 to 5000 cd/m2 as only the polymeric host was used, or decreased to 7000 cd/m2 as only the molecular host was used. The markedly improved device performance achieved in the devices with blended hosts may be attributed to the employed polymeric host that contributed a good film-forming character, and the molecular host that contributed a good electroluminescence character.

Plasmon-enhanced Electrically Light-emitting from ZnO Nanorod Arrays/p-GaN Heterostructure Devices

PubMed Central

Lu, Junfeng; Shi, Zengliang; Wang, Yueyue; Lin, Yi; Zhu, Qiuxiang; Tian, Zhengshan; Dai, Jun; Wang, Shufeng; Xu, Chunxiang

2016-01-01

Effective and bright light-emitting-diodes (LEDs) have attracted broad interests in fundamental research and industrial application, especially on short wavelength LEDs. In this paper, a well aligned ZnO nanorod arrays grown on the p-GaN substrate to form a heterostructured light-emitting diode and Al nanoparticles (NPs) were decorated to improve the electroluminescence performance. More than 30-folds enhancement of the electroluminescence intensity was obtained compared with the device without Al NPs decoration. The investigation on the stable and transient photoluminescence spectraof the ZnO nanorod arrays before and after Al NPs decoration demonstrated that the metal surface plasmon resonance coupling with excitons of ZnO leads to the enhancement of the internal quantum efficiency (IQE). Our results provide aneffective approach to design novel optoelectronic devices such as light-emitting diodes and plasmonic nanolasers. PMID:27181337

Non-Toxic Gold Nanoclusters for Solution-Processed White Light-Emitting Diodes.

PubMed

Chao, Yu-Chiang; Cheng, Kai-Ping; Lin, Ching-Yi; Chang, Yu-Li; Ko, Yi-Yun; Hou, Tzu-Yin; Huang, Cheng-Yi; Chang, Walter H; Lin, Cheng-An J

2018-06-11

Solution-processed optoelectronic devices are attractive because of the potential low-cost fabrication and the compatibility with flexible substrate. However, the utilization of toxic elements such as lead and cadmium in current optoelectronic devices on the basis of colloidal quantum dots raises environmental concerns. Here we demonstrate that white-light-emitting diodes can be achieved by utilizing non-toxic and environment-friendly gold nanoclusters. Yellow-light-emitting gold nanoclusters were synthesized and capped with trioctylphosphine. These gold nanoclusters were then blended with the blue-light-emitting organic host materials to form the emissive layer. A current efficiency of 0.13 cd/A was achieved. The Commission Internationale de l'Eclairage chromaticity coordinates of (0.27, 0.33) were obtained from our experimental analysis, which is quite close to the ideal pure white emission coordinates (0.33, 0.33). Potential applications include innovative lighting devices and monitor backlight.

Plasmon-enhanced Electrically Light-emitting from ZnO Nanorod Arrays/p-GaN Heterostructure Devices.

PubMed

Lu, Junfeng; Shi, Zengliang; Wang, Yueyue; Lin, Yi; Zhu, Qiuxiang; Tian, Zhengshan; Dai, Jun; Wang, Shufeng; Xu, Chunxiang

2016-05-16

Effective and bright light-emitting-diodes (LEDs) have attracted broad interests in fundamental research and industrial application, especially on short wavelength LEDs. In this paper, a well aligned ZnO nanorod arrays grown on the p-GaN substrate to form a heterostructured light-emitting diode and Al nanoparticles (NPs) were decorated to improve the electroluminescence performance. More than 30-folds enhancement of the electroluminescence intensity was obtained compared with the device without Al NPs decoration. The investigation on the stable and transient photoluminescence spectraof the ZnO nanorod arrays before and after Al NPs decoration demonstrated that the metal surface plasmon resonance coupling with excitons of ZnO leads to the enhancement of the internal quantum efficiency (IQE). Our results provide aneffective approach to design novel optoelectronic devices such as light-emitting diodes and plasmonic nanolasers.

Two-In-One Method for Graphene Transfer: Simplified Fabrication Process for Organic Light-Emitting Diodes.

PubMed

Liu, Lihui; Shang, Wenjuan; Han, Chao; Zhang, Qing; Yao, Yao; Ma, Xiaoqian; Wang, Minghao; Yu, Hongtao; Duan, Yu; Sun, Jie; Chen, Shufen; Huang, Wei

2018-02-28

Graphene as one of the most promising transparent electrode materials has been successfully applied in organic light-emitting diodes (OLEDs). However, traditional poly(methyl methacrylate) (PMMA) transfer method usually results in hardly removed polymeric residues on the graphene surface, which induces unwanted leakage current, poor diode behavior, and even device failure. In this work, we proposed a facile and efficient two-in-one method to obtain clean graphene and fabricate OLEDs, in which the poly(9,9-di-n-octylfluorene-alt-(1,4-phenylene-(4-sec-butylphenyl)imino)-1,4-phenylene) (TFB) layer was inserted between the graphene and PMMA film both as a protector during the graphene transfer and a hole-injection layer in OLEDs. Finally, green OLED devices were successfully fabricated on the PMMA-free graphene/TFB film, and the device luminous efficiency was increased from 64.8 to 74.5 cd/A by using the two-in-one method. Therefore, the proposed two-in-one graphene transfer method realizes a high-efficient graphene transfer and device fabrication process, which is also compatible with the roll-to-roll manufacturing. It is expected that this work can enlighten the design and fabrication of the graphene-based optoelectronic devices.

Design analysis of phosphor-free monolithic white light-emitting-diodes with InGaN/ InGaN multiple quantum wells on ternary InGaN substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ooi, Yu Kee, E-mail: Yu.Kee.Ooi@rit.edu; Zhang, Jing, E-mail: Jing.Zhang@rit.edu

2015-05-15

Phosphor-free monolithic white light emitting diodes (LEDs) based on InGaN/ InGaN multiple quantum wells (MQWs) on ternary InGaN substrates are proposed and analyzed in this study. Simulation studies show that LED devices composed of multi-color-emitting InGaN/ InGaN quantum wells (QWs) employing ternary InGaN substrate with engineered active region exhibit stable white color illumination with large output power (∼ 170 mW) and high external quantum efficiency (EQE) (∼ 50%). The chromaticity coordinate for the investigated monolithic white LED devices are located at (0.30, 0.28) with correlated color temperature (CCT) of ∼ 8200 K at J = 50 A/cm{sup 2}. A referencemore » LED device without any nanostructure engineering exhibits green color emission shows that proper engineered structure is essential to achieve white color illumination. This proof-of-concept study demonstrates that high-efficiency and cost-effective phosphor-free monolithic white LED is feasible by the use of InGaN/ InGaN MQWs on ternary InGaN substrate combined with nanostructure engineering, which would be of great impact for solid state lighting.« less

Improved Efficiency and Enhanced Color Quality of Light-Emitting Diodes with Quantum Dot and Organic Hybrid Tandem Structure.

PubMed

Zhang, Heng; Feng, Yuanxiang; Chen, Shuming

2016-10-03

Light-emitting diodes based on organic (OLEDs) and colloidal quantum dot (QLEDs) are widely considered as next-generation display technologies because of their attractive advantages such as self-emitting and flexible form factor. The OLEDs exhibit relatively high efficiency, but their color saturation is quite poor compared with that of QLEDs. In contrast, the QLEDs show very pure color emission, but their efficiency is lower than that of OLEDs currently. To combine the advantages and compensate for the weaknesses of each other, we propose a hybrid tandem structure which integrates both OLED and QLED in a single device architecture. With ZnMgO/Al/HATCN interconnecting layer, hybrid tandem LEDs are successfully fabricated. The demonstrated hybrid tandem devices feature high efficiency and high color saturation simultaneously; for example, the devices exhibit maximum current efficiency and external quantum efficiency of 96.28 cd/A and 25.90%, respectively. Meanwhile, the full width at half-maximum of the emission spectra is remarkably reduced from 68 to 44 nm. With the proposed hybrid tandem structure, the color gamut of the displays can be effectively increased from 81% to 100% NTSC. The results indicate that the advantages of different LED technologies can be combined in a hybrid tandem structure.

Polyfluorene light-emitting devices and amorphous silicon:hydrogen TFT pixel circuits for active-matrix organic light-emitting displays

NASA Astrophysics Data System (ADS)

He, Yi

2000-10-01

Organic light-emitting devices (OLEDs) made of single-layer and double-layer polymer thin films have been fabricated and studied. The hole transporting (polymer A) and emissive (polymer B) polymers were poly(9,9' -dioctyl fluorene-2,7-diyl)-co-poly(diphenyl-p-tolyl-amine-4,4 '-diyl) and poly(9,9'-dioctyl fluorene-2,7-diyl)-co-poly(benzothiadiazole 2,5-diyl), respectively. The optical bandgaps of polymer A and B were 2.72 and 2.82 eV, respectively. The photoluminescence (PL) peaks for polymer A and B were 502 and 546 nm, respectively. The electroluminescence (EL) peak for polymer B was 547 nm. No EL has been observed from polymer A single layer OLEDs. To obtain the spectral distribution of the emission properties of the light-emitting devices, a new light-output measurement technique was developed. Using this technique, the spectral distribution of the luminance, radiance, photon density emission can be obtained. Moreover, the device external quantum efficiency calculated using this technique is accurate and insensitive to the light emission spectrum shape. Organic light-emitting devices have been fabricated and studied on both glass and flexible plastic substrates. The OLEDs showed a near-linear relationship between the luminance and the applied current density over four orders of magnitude. For the OLEDs fabricated on the glass substrate, luminance ˜9,300 cd/m2, emission efficiency ˜14.5 cd/A, luminescence power efficiency ˜2.26 lm/W, and external quantum efficiency ˜3.85% have been achieved. For the OLEDs fabricated on the flexible plastic substrates, both aluminum and calcium were used as cathode materials. The achieved maximum OLED luminance, emission efficiency, luminescence power efficiency, and external quantum efficiency were ˜13,000 cd/m2, ˜66.1 cd/A, ˜17.2 lm/W, and 16.7%, respectively. To make an active-matrix organic light-emitting display (AM-OLED), a two-TFT pixel electrode circuit was designed and fabricated based on amorphous silicon TFT technology. This circuit was capable of providing continuous pixel excitation and a simple driving scheme. However, it showed an output current variation of ˜40% to 80% due to the drive TFT threshold voltage (V th) shift after long-term operation. To improve the pixel circuit electrical reliability, a four-TFT pixel electrode circuit was proposed and fabricated. This circuit only showed an output current variation <1% for the high currents (>0.5muA) even when a TFT Vth shift as large as 3V was present. This four-TFT pixel electrode circuit was used to fabricate small size active-matrix monochrome organic light-emitting display.

Fabrication of white light-emitting diodes based on UV light-emitting diodes with conjugated polymers-(CdSe/ZnS) quantum dots as hybrid phosphors.

PubMed

Jung, Hyunchul; Chung, Wonkeun; Lee, Chang Hun; Kim, Sung Hyun

2012-07-01

White light-emitting diodes (LEDs) were fabricated using GaN-based 380-nm UV LEDs precoated with the composite of blue-emitting polymer (poly[(9,9-dihexylfluorenyl-2,7-diyl)-alt-co-(2-methoxy-5-{2-ethylhexyloxy)-1 ,4-phenylene)]), yellow green-emitting polymer (poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(1,4-benzo-{2,1',3}-thiadiazole)]), and 605-nm red-emitting quantum dots (QDs). CdSe cores were obtained by solvothermal route using CdO, Se precursors and ZnS shells were synthesized by using diethylzinc, and hexamethyldisilathiane precursors. The optical properties of CdSe/ZnS QDs were characterized by UV-visible and photoluminescence (PL) spectra. The structural data and composition of the QDs were transmission electron microscopy (TEM), and EDX technique. The quantum yield and size of the QDs were 58.7% and about 6.7 nm, respectively. Three-band white light was generated by hybridizing blue (430 nm), green (535 nm), and red (605 nm) emission. The color-rendering index (CRI) of the device was extremely improved by introducing the QDs. The CIE-1931 chromaticity coordinate, color temperature, and CRI of a white LED at 20 mA were (0.379, 0.368), 3969 K, and 90, respectively.

Fabrication of a white electroluminescent device based on bilayered yellow and blue quantum dots

NASA Astrophysics Data System (ADS)

Kim, Jong-Hoon; Lee, Ki-Heon; Kang, Hee-Don; Park, Byoungnam; Hwang, Jun Yeon; Jang, Ho Seong; Do, Young Rag; Yang, Heesun

2015-03-01

Until now most work on colloidal quantum dot-light-emitting diodes (QLEDs) has been focused on the improvement of the electroluminescent (EL) performance of monochromatic devices, and multi-colored white QLEDs comprising more than one type of QD emitter have been rarely investigated. To demonstrate a white EL as a result of color mixing between blue and yellow, herein a unique combination of two dissimilar QDs of blue- CdZnS/ZnS plus a yellow-emitting Cu-In-S (CIS)/ZnS is used for the formation of the emitting layer (EML) of a multilayered QLED. First, the QLED consisting of a single EML randomly mixed with two QDs is fabricated, however, its EL is dominated by blue emission with the contribution of yellow emission substantially weaker. Thus, another EML configuration is devised in the form of a QD bilayer with two stacking sequences of CdZnS/ZnS//CIS/ZnS QD and vice versa. The QLED with the former stacking sequence shows an overwhelming contribution of blue EL, similar to the mixed QD EML-based device. Upon applying the oppositely stacked QD bilayer of CIS/ZnS//CdZnS/ZnS, however, a bicolored white EL can be successfully achieved by means of the effective extension of the radiative excitonic recombination zone throughout both QD EML regions. Such QD EML configuration-dependent EL results, which are discussed primarily using the proposed device energy level diagram, strongly suggest that the positional design of individual QD emitters is a critical factor for the realization of multicolored, white emissive devices.Until now most work on colloidal quantum dot-light-emitting diodes (QLEDs) has been focused on the improvement of the electroluminescent (EL) performance of monochromatic devices, and multi-colored white QLEDs comprising more than one type of QD emitter have been rarely investigated. To demonstrate a white EL as a result of color mixing between blue and yellow, herein a unique combination of two dissimilar QDs of blue- CdZnS/ZnS plus a yellow-emitting Cu-In-S (CIS)/ZnS is used for the formation of the emitting layer (EML) of a multilayered QLED. First, the QLED consisting of a single EML randomly mixed with two QDs is fabricated, however, its EL is dominated by blue emission with the contribution of yellow emission substantially weaker. Thus, another EML configuration is devised in the form of a QD bilayer with two stacking sequences of CdZnS/ZnS//CIS/ZnS QD and vice versa. The QLED with the former stacking sequence shows an overwhelming contribution of blue EL, similar to the mixed QD EML-based device. Upon applying the oppositely stacked QD bilayer of CIS/ZnS//CdZnS/ZnS, however, a bicolored white EL can be successfully achieved by means of the effective extension of the radiative excitonic recombination zone throughout both QD EML regions. Such QD EML configuration-dependent EL results, which are discussed primarily using the proposed device energy level diagram, strongly suggest that the positional design of individual QD emitters is a critical factor for the realization of multicolored, white emissive devices. Electronic supplementary information (ESI) available: Detailed description of synthesis of CdZnS/ZnS, CIS/ZnS QDs and ZnO NPs; TEM images of CdZnS/ZnS and CIS/ZnS QDs; voltage-dependent luminance (CE variations of blue CdZnS/ZnS and yellow CIS/ZnS monochromatic QLEDs; EL spectra and energy band diagram of bilayered QD EML-based QLED with a stacking sequence of CdZnS/ZnS//CIS/ZnS QD; normalized EL spectra of CIS/ZnS//CdZnS/ZnS QD-bilayered QLEDs; comparison of current density of monochromatic QLEDs and bicolored white QLEDs; and voltage-dependent luminance (CE variations of CIS/ZnS QLED fabricated through 150 °C-EML baking. See DOI: 10.1039/c5nr00426h

Biopolymers in Light Emitting Devices

DTIC Science & Technology

2006-09-01

from an Alq3 layer are illustrated in Fig. 4. Red emission from the rare earth ion Eu3+ doped into the various emitter layers has also been...structure. 26 • IDRC 3.2 / A. J. Steckl Figure 4. DNA BioLEDs: (a) blue (NPB) and green ( Alq3 ) emitting devices in operation; (b) luminance

Conjugated polymers and their use in optoelectronic devices

DOEpatents

Marks, Tobin J.; Guo, Xugang; Zhou, Nanjia; Chang, Robert P. H.; Drees, Martin; Facchetti, Antonio

2016-10-18

The present invention relates to certain polymeric compounds and their use as organic semiconductors in organic and hybrid optical, optoelectronic, and/or electronic devices such as photovoltaic cells, light emitting diodes, light emitting transistors, and field effect transistors. The present compounds can provide improved device performance, for example, as measured by power conversion efficiency, fill factor, open circuit voltage, field-effect mobility, on/off current ratios, and/or air stability when used in photovoltaic cells or transistors. The present compounds can have good solubility in common solvents enabling device fabrication via solution processes.

Progress in wet-coated organic light-emitting devices for lighting

NASA Astrophysics Data System (ADS)

Liu, Jie; Ye, Qing; Lewis, Larry N.; Duggal, Anil R.

2007-09-01

Here we present recent progress in developing efficient wet-coated organic light-emitting devices (OLEDs) for lighting applications. In particular, we describe a novel approach for building efficient wet-coated dye-doped blue phosphorescent devices. Further, a novel approach for achieving arbitrary emission patterning for OLEDs is discussed. This approach utilizes a photo-induced chemical doping strategy for selectively activating charge injection materials, thus enabling devices with arbitrary emission patterning. This approach may provide a simple, low cost path towards specialty lighting and signage applications for OLED technology.

Infrared emitting device and method

DOEpatents

Kurtz, S.R.; Biefeld, R.M.; Dawson, L.R.; Howard, A.J.; Baucom, K.C.

1997-04-29

The infrared emitting device comprises a III-V compound semiconductor substrate upon which are grown a quantum-well active region having a plurality of quantum-well layers formed of a ternary alloy comprising InAsSb sandwiched between barrier layers formed of a ternary alloy having a smaller lattice constant and a larger energy bandgap than the quantum-well layers. The quantum-well layers are preferably compressively strained to increase the threshold energy for Auger recombination; and a method is provided for determining the preferred thickness for the quantum-well layers. Embodiments of the present invention are described having at least one cladding layer to increase the optical and carrier confinement in the active region, and to provide for waveguiding of the light generated within the active region. Examples have been set forth showing embodiments of the present invention as surface- and edge-emitting light emitting diodes (LEDs), an optically-pumped semiconductor laser, and an electrically-injected semiconductor diode laser. The light emission from each of the infrared emitting devices of the present invention is in the midwave infrared region of the spectrum from about 2 to 6 microns. 8 figs.

Highly efficient and low voltage silver nanowire-based OLEDs employing a n-type hole injection layer.

PubMed

Lee, Hyungjin; Lee, Donghwa; Ahn, Yumi; Lee, Eun-Woo; Park, Lee Soon; Lee, Youngu

2014-08-07

Highly flexible and efficient silver nanowire-based organic light-emitting diodes (OLEDs) have been successfully fabricated by employing a n-type hole injection layer (HIL). The silver nanowire-based OLEDs without light outcoupling structures exhibited excellent device characteristics such as extremely low turn-on voltage (3.6 V) and high current and power efficiencies (44.5 cd A(-1) and 35.8 lm W(-1)). In addition, flexible OLEDs with the silver nanowire transparent conducting electrode (TCE) and n-type HIL fabricated on plastic substrates showed remarkable mechanical flexibility as well as device performance.

Influence of electron transport layer thickness on optical properties of organic light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Guohong; Liu, Yong; Li, Baojun

2015-06-07

We investigate experimentally and theoretically the influence of electron transport layer (ETL) thickness on properties of typical N,N′-diphenyl-N,N′-bis(1-naphthyl)-[1,1′-biphthyl]-4,4′-diamine (NPB)/tris-(8-hydroxyquinoline) aluminum (Alq{sub 3}) heterojunction based organic light-emitting diodes (OLEDs), where the thickness of ETL is varied to adjust the distance between the emitting zone and the metal electrode. The devices showed a maximum current efficiency of 3.8 cd/A when the ETL thickness is around 50 nm corresponding to an emitter-cathode distance of 80 nm, and a second maximum current efficiency of 2.6 cd/A when the ETL thickness is around 210 nm corresponding to an emitter-cathode distance of 240 nm. We adopt a rigorous electromagnetic approach that takesmore » parameters, such as dipole orientation, polarization, light emitting angle, exciton recombination zone, and diffusion length into account to model the optical properties of devices as a function of varying ETL thickness. Our simulation results are accurately consistent with the experimental results with a widely varying thickness of ETL, indicating that the theoretical model may be helpful to design high efficiency OLEDs.« less

High-efficiency white OLEDs based on small molecules

NASA Astrophysics Data System (ADS)

Hatwar, Tukaram K.; Spindler, Jeffrey P.; Ricks, M. L.; Young, Ralph H.; Hamada, Yuuhiko; Saito, N.; Mameno, Kazunobu; Nishikawa, Ryuji; Takahashi, Hisakazu; Rajeswaran, G.

2004-02-01

Eastman Kodak Company and SANYO Electric Co., Ltd. recently demonstrated a 15" full-color, organic light-emitting diode display (OLED) using a high-efficiency white emitter combined with a color-filter array. Although useful for display applications, white emission from organic structures is also under consideration for other applications, such as solid-state lighting, where high efficiency and good color rendition are important. By incorporating adjacent blue and orange emitting layers in a multi-layer structure, highly efficient, stable white emission has been attained. With suitable host and dopant combinations, a luminance yield of 20 cd/A and efficiency of 8 lm/W have been achieved at a drive voltage of less than 8 volts and luminance level of 1000 cd/m2. The estimated external efficiency of this device is 6.3% and a high level of operational stability is observed. To our knowledge, this is the highest performance reported so far for white organic electroluminescent devices. We will review white OLED technology and discuss the fabrication and operating characteristics of these devices.

Highly ultraviolet transparent textured indium tin oxide thin films and the application in light emitting diodes

NASA Astrophysics Data System (ADS)

Chen, Zimin; Zhuo, Yi; Tu, Wenbin; Ma, Xuejin; Pei, Yanli; Wang, Chengxin; Wang, Gang

2017-06-01

Various kinds of materials have been developed as transparent conductors for applications in semiconductor optoelectronic devices. However, there is a bottleneck that transparent conductive materials lose their transparency at ultraviolet (UV) wavelengths and could not meet the demands for commercial UV device applications. In this work, textured indium tin oxide (ITO) is grown and its potential to be used at UV wavelengths is explored. It is observed that the pronounced Burstein-Moss effect could widen the optical bandgap of the textured ITO to 4.7 eV. The average transmittance in UVA (315 nm-400 nm) and UVB (280 nm-315 nm) ranges is as high as 94% and 74%, respectively. The excellent optical property of textured ITO is attributed to its unique structural property. The compatibility of textured ITO thin films to the device fabrication is demonstrated on 368-nm nitride-based light emitting diodes, and the enhancement of light output power by 14.8% is observed compared to sputtered ITO.

Observation of low voltage driven green emission from erbium doped Ga{sub 2}O{sub 3} light-emitting devices

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Zhengwei; Wang, Xu; Zhang, Fabi

Erbium doped Ga{sub 2}O{sub 3} thin films were deposited on Si substrate by pulsed laser deposition method. Bright green emission (∼548 nm) can be observed by naked eye from Ga{sub 2}O{sub 3}:Er/Si light-emitting devices (LEDs). The driven voltage of this LEDs is 6.2 V which is lower than that of ZnO:Er/Si or GaN:Er/Si devices. Since the wide bandgap of Ga{sub 2}O{sub 3} contain more defect-related level which will enhance the effects of recombination between electrons in the defect-related level and the holes in the valence band, resulting in the improvement of the energy transfer to Er ions. We believe that this workmore » paves the way for the development of Si-based green LEDs by using wide bandgap Ga{sub 2}O{sub 3} as the host materials for Er{sup 3+} ions.« less

Magnetic field enhancement of generation-recombination and shot noise in organic light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Djidjou, T. K.; Basel, Tek; Rogachev, A.

We have studied the effect of magnetic field on noise in series of 2-methoxy-5-(2′-ethylhexyloxy)-1,4-phenylenevinylene-based organic light emitting diodes with dominant hole injection, dominant electron injection, and balanced electron and hole injection. The noise spectra of the balanced devices revealed the generation-recombination (g-r) noise term, which we associated with bimolecular electron-hole recombination. The presence of the g-r noise term is correlated with the strong organic magnetoresistance (up to 25%) observed in the balanced devices. The noise spectra also have the shot noise contribution with the Fano factor 0.25–0.4. We found that time constant of the g-r term decreases and the magnitudemore » of shot noise increases when magnetic field is applied. This behavior can be consistently explained within the polaron-polaron model of organic magnetoresistance. We have not found any evidence that the magnetoresistance in studied devices is affected by traps.« less

Long-range coupling of electron-hole pairs in spatially separated organic donor-acceptor layers

PubMed Central

Nakanotani, Hajime; Furukawa, Taro; Morimoto, Kei; Adachi, Chihaya

2016-01-01

Understanding exciton behavior in organic semiconductor molecules is crucial for the development of organic semiconductor-based excitonic devices such as organic light-emitting diodes and organic solar cells, and the tightly bound electron-hole pair forming an exciton is normally assumed to be localized on an organic semiconducting molecule. We report the observation of long-range coupling of electron-hole pairs in spatially separated electron-donating and electron-accepting molecules across a 10-nanometers-thick spacer layer. We found that the exciton energy can be tuned over 100 megaelectron volts and the fraction of delayed fluorescence can be increased by adjusting the spacer-layer thickness. Furthermore, increasing the spacer-layer thickness produced an organic light-emitting diode with an electroluminescence efficiency nearly eight times higher than that of a device without a spacer layer. Our results demonstrate the first example of a long-range coupled charge-transfer state between electron-donating and electron-accepting molecules in a working device. PMID:26933691

High-performance planar green light-emitting diodes based on a PEDOT:PSS/CH3NH3PbBr3/ZnO sandwich structure

NASA Astrophysics Data System (ADS)

Shi, Zhi-Feng; Sun, Xu-Guang; Wu, Di; Xu, Ting-Ting; Zhuang, Shi-Wei; Tian, Yong-Tao; Li, Xin-Jian; Du, Guo-Tong

2016-05-01

Recently, perovskite-based light-emitting diodes based on organometal halide emitters have attracted much attention because of their excellent properties of high color purity, tunable emission wavelength and a low-temperature processing technique. As is well-known, organic light-emitting diodes have shown powerful capabilities in this field; however, the fabrication of these devices typically relies on high-temperature and high-vacuum processes, which increases the final cost of the product and renders them uneconomical for use in large-area displays. Organic/inorganic hybrid halide perovskites match with these material requirements, as it is possible to prepare such materials with high crystallinity through solution processing at low temperature. Herein, we demonstrated a high-brightness green light-emitting diode based on PEDOT:PSS/CH3NH3PbBr3/ZnO sandwich structures by a spin-coating method combined with a sputtering system. Under forward bias, a dominant emission peak at ~530 nm with a low full width of half-maximum (FWHM) of 30 nm can be achieved at room temperature. Owing to the high surface coverage of the CH3NH3PbBr3 layer and a device design based on carrier injection and a confinement configuration, the proposed diode exhibits good electroluminescence performance, with an external quantum efficiency of 0.0645%. More importantly, we investigated the working stability of the studied diode under continuous operation to verify the sensitivity of the electroluminescence performance to ambient atmosphere and to assess the suitability of the diode for practical applications. Moreover, the underlying reasons for the undesirable emission decay are tentatively discussed. This demonstration of an effective green electroluminescence based on CH3NH3PbBr3 provides valuable information for the design and development of perovskites as efficient emitters, thus facilitating their use in existing applications and suggesting new potential applications.

A new approach way for white organic light-emitting diodes based on single emitting layer and large stokes shift.

PubMed

Kim, Beomjin; Park, Youngil; Shin, Yunseop; Lee, Jiwon; Shin, Hwangyu; Park, Jongwook

2014-07-01

New red dopant, DPPZ based on porphyrin moiety was synthesized. DPPZ showed UV-Vis and PL maximum values of 412 and 638 nm, indicating the large stokes shift. New blue host compound, TATa was also synthesized and used for co-mixed white emission. TATa exhibited UV-Vis. and PL maximum values of 403 nm and 463 nm in film state. Thus, when two compounds are used as co-mixed emitter in OLED device, there is no energy transfer from blue emission of TATa to DPPZ due to large stokes shift of DPPZ. Based on the PL result, it is available to realize two-colored white in PL and EL spectra. As a result of this, two-mixed compounds showed vivid their own PL emission peaks of 466 and 638 nm in film state. Also, white OLED device using two-mixed compounds system was fabricated. EL spectrum shows 481 and 646 nm peaks and two separate EL peaks. As the operation voltage is increased from 8 to 11 V, EL spectrum does not change the peak shape and maximum wavelength values. EL performance of white device showed 0.041 cd/A, 0.018 Im/W, and CIE (0.457, 0.331) at 8 V.

Oxycarbonitride phosphors and light emitting devices using the same

DOEpatents

Li, Yuanqiang; Romanelli, Michael Dennis; Tian, Yongchi

2013-10-08

Disclosed herein is a novel family of oxycarbidonitride phosphor compositions and light emitting devices incorporating the same. Within the sextant system of M--Al--Si--O--N--C--Ln and quintuplet system of M--Si--O--N--C--Ln (M=alkaline earth element, Ln=rare earth element), the phosphors are composed of either one single crystalline phase or two crystalline phases with high chemical and thermal stability. In certain embodiments, the disclosed phosphor of silicon oxycarbidonitrides emits green light at wavelength between 530-550 nm. In further embodiments, the disclosed phosphor compositions emit blue-green to yellow light in a wavelength range of 450-650 nm under near-UV and blue light excitation.

Oxycarbonitride phosphors and light emitting devices using the same

DOEpatents

Li, Yuanqiang; Romanelli, Michael Dennis; Tian, Yongchi

2014-07-08

Disclosed herein is a novel family of oxycarbonitride phosphor compositions and light emitting devices incorporating the same. Within the sextant system of M--Al--Si--O--N--C--Ln and quintuplet system of M--Si--O--N--C--Ln (M=alkaline earth element, Ln=rare earth element), the phosphors are composed of either one single crystalline phase or two crystalline phases with high chemical and thermal stability. In certain embodiments, the disclosed phosphor of silicon oxycarbonitrides emits green light at wavelength between 530-550 nm. In further embodiments, the disclosed phosphor compositions emit blue-green to yellow light in a wavelength range of 450-650 nm under near-UV and blue light excitation.

Top-emitting white organic light-emitting devices with down-conversion phosphors: theory and experiment.

PubMed

Ji, Wenyu; Zhang, Letian; Gao, Ruixue; Zhang, Liming; Xie, Wenfa; Zhang, Hanzhuang; Li, Bin

2008-09-29

White top-emitting organic light-emitting devices (TEOLEDs) with down-conversion phosphors are investigated from theory and experiment. The theoretical simulation was described by combining the microcavity model with the down-conversion model. A White TEOLED by the combination of a blue TEOLED with organic down-conversion phosphor 3-(4-(diphenylamino)phenyl)-1-pheny1prop-2-en-1-one was fabricated to validate the simulated results. It is shown that this approach permits the generation of white light in TEOLEDs. The efficiency of the white TEOLED is twice over the corresponding blue TEOLED. The feasible methods to improve the performance of such white TEOLEDs are discussed.

A Yellow-Emitting Homoleptic Iridium(III) Complex Constructed from a Multifunctional Spiro Ligand for Highly Efficient Phosphorescent Organic Light-Emitting Diodes.

PubMed

Ren, Bao-Yi; Guo, Run-Da; Zhong, Dao-Kun; Ou, Chang-Jin; Xiong, Gang; Zhao, Xiang-Hua; Sun, Ya-Guang; Jurow, Matthew; Kang, Jun; Zhao, Yi; Li, Sheng-Biao; You, Li-Xin; Wang, Lin-Wang; Liu, Yi; Huang, Wei

2017-07-17

To suppress concentration quenching and to improve charge-carrier injection/transport in the emission layer (EML) of phosphorescent organic light-emitting diodes (PhOLEDs), a facial homoleptic iridium(III) complex emitter with amorphous characteristics was designed and prepared in one step from a multifunctional spiro ligand containing spiro[fluorene-9,9'-xanthene] (SFX) unit. Single-crystal X-ray analysis of the resulting fac-Ir(SFXpy) 3 complex revealed an enlarged Ir···Ir distance and negligible intermolecular π-π interactions between the spiro ligands. The emitter exhibits yellow emission and almost equal energy levels compared to the commercial phosphor iridium(III) bis(4-phenylthieno[3,2-c]pyridinato-N,C 2 ')acetylacetonate (PO-01). Dry-processed devices using a common host, 4,4'-bis(N-carbazolyl)-1,1'-biphenyl, and the fac-Ir(SFXpy) 3 emitter at a doping concentration of 15 wt % exhibited a peak performance of 46.2 cd A -1 , 36.3 lm W -1 , and 12.1% for the current efficiency (CE), power efficiency (PE), and external quantum efficiency (EQE), respectively. Compared to control devices using PO-01 as the dopant, the fac-Ir(SFXpy) 3 -based devices remained superior in the doping range between 8 and 15 wt %. The current densities went up with increasing doping concentration at the same driving voltage, while the roll-offs remain relatively low even at high doping levels. The superior performance of the new emitter-based devices was ascribed to key roles of the spiro ligand for suppressing aggregation and assisting charge-carrier injection/transport. Benefiting from the amorphous stability of the emitter, the wet-processed device also exhibited respectful CE, PE, and EQE of 32.2 cd A -1 , 22.1 lm W -1 , and 11.3%, respectively, while the EQE roll-off was as low as 1.7% at the luminance of 1000 cd m -2 . The three-dimensional geometry and binary-conjugation features render SFX the ideal multifunctional module for suppressing concentration quenching, facilitating charge-carrier injection/transport, and improving the amorphous stability of iridium(III)-based phosphorescent emitters.

Ultrastable, highly luminescent quantum dot composites based on advanced surface manipulation strategy for flexible lighting-emitting.

PubMed

Kong, Lingqing; Zhang, Lin; Meng, Zhaohui; Xu, Chuan; Lin, Naibo; Liu, Xiang-Yang

2018-08-03

Although quantum dots (QDs) have remarkable potential application in flexible light emitting diodes (LED), the loss of solvent-protected QDs leads to low quantum yield (QY) and poor stability, severely restricting the development. Flexible QD LEDs (Q-LEDs) with three primary colors were fabricated by mixing CdS/ZnS, CdSe@ZnS/ZnS, and CdSe/CdS QDs with polydimethylsiloxane (PDMS) by in situ hydrosilylation based surface manipulation strategy, which endows the device with highly ultrastable and luminescent performance. The surface manipulation strategy mainly includes the control of solvent dosage, purification times of QDs, concentration of QDs in PDMS, and oxidation on the preparation process of the QDs and PDMS composites. The highest QY of CdSe@ZnS/ZnS-PDMS composite is 82.03%, higher than the QY (80%) of the QD solution. After UV bleaching, organic solvents (acetone, ethanol and water), and heating treatment, the QYs of the QDs and PDMS maintain a high value, manifesting their good stability. Q-LED hybrid light-emitting devices were further fabricated by a molding technique demonstrating satisfied current and thermal stability. Flexible Q-LEDs can be expended to other shapes, such as fibers and blocks, indicating the huge potential of QD-polymer composites for light sources and displays etc.

Optical analysis of down-conversion OLEDs

NASA Astrophysics Data System (ADS)

Krummacher, Benjamin; Klein, Markus; von Malm, Norwin; Winnacker, Albrecht

2008-02-01

Phosphor down-conversion of blue organic light-emitting diodes (OLEDs) is one approach to generate white light, which offers the possibility of easy color tuning, a simple device architecture and color stability over lifetime. In this article previous work on down-conversion devices in the field of organic solid state lighting is briefly reviewed. Further, bottom emitting down-conversion OLEDs are studied from an optical point of view. Therefore the physical processes occurring in the down-conversion layer are translated into a model which is implemented in a ray tracing simulation. By comparing its predictions to experimental results the model is confirmed. For the experiments a blue-emitting polymer OLED (PLED) panel optically coupled to a series of down-conversion layers is used. Based on results obtained from ray tracing simulation some of the implications of the model for the performance of down-conversion OLEDs are discussed. In particular it is analysed how the effective reflectance of the underlying blue OLED and the particle size distribution of the phosphor powder embedded in the matrix of the down-conversion layer influence extraction efficiency.

User-interactive electronic skin for instantaneous pressure visualization

NASA Astrophysics Data System (ADS)

Wang, Chuan; Hwang, David; Yu, Zhibin; Takei, Kuniharu; Park, Junwoo; Chen, Teresa; Ma, Biwu; Javey, Ali

2013-10-01

Electronic skin (e-skin) presents a network of mechanically flexible sensors that can conformally wrap irregular surfaces and spatially map and quantify various stimuli. Previous works on e-skin have focused on the optimization of pressure sensors interfaced with an electronic readout, whereas user interfaces based on a human-readable output were not explored. Here, we report the first user-interactive e-skin that not only spatially maps the applied pressure but also provides an instantaneous visual response through a built-in active-matrix organic light-emitting diode display with red, green and blue pixels. In this system, organic light-emitting diodes (OLEDs) are turned on locally where the surface is touched, and the intensity of the emitted light quantifies the magnitude of the applied pressure. This work represents a system-on-plastic demonstration where three distinct electronic components—thin-film transistor, pressure sensor and OLED arrays—are monolithically integrated over large areas on a single plastic substrate. The reported e-skin may find a wide range of applications in interactive input/control devices, smart wallpapers, robotics and medical/health monitoring devices.

Facile solution-processed aqueous MoOx for feasible application in organic light-emitting diode

NASA Astrophysics Data System (ADS)

Zheng, Qinghong; Qu, Disui; Zhang, Yan; Li, Wanshu; Xiong, Jian; Cai, Ping; Xue, Xiaogang; Liu, Liming; Wang, Honghang; Zhang, Xiaowen

2018-05-01

Solution-processed techniques attract increasing attentions in organic electronics for their low-cost and scalable manufacturing. We demonstrate the favorite hole injection material of solution-processed aqueous MoOx (s-MoOx) with facile fabrication process and cast successful application to constructing efficient organic light-emitting diodes (OLEDs). Atomic force microscopy and X-ray photoelectron spectroscopy analysis show that s-MoOx behaves superior film morphology and non-stoichiometry with slight oxygen deficiency. With tris(8-hydroxy-quinolinato)aluminium as emitting layer, s-MoOx based OLED shows maximum luminous efficiency of 7.9 cd/A and power efficiency of 5.9 lm/W, which have been enhanced by 43.6% and 73.5%, respectively, in comparison with the counterpart using conventional vacuum thermal evaporation MoOx. Current-voltage, impedance-voltage, phase-voltage and capacitance-voltage characteristics of hole-only devices indicate that s-MoOx with two processes of "spin-coating/annealing" shows mostly enhanced hole injection capacity and thus promoting device performance. Our experiments provide an alternative approach for constructing efficient OLED with solution process.

User-interactive electronic skin for instantaneous pressure visualization.

PubMed

Wang, Chuan; Hwang, David; Yu, Zhibin; Takei, Kuniharu; Park, Junwoo; Chen, Teresa; Ma, Biwu; Javey, Ali

2013-10-01

Electronic skin (e-skin) presents a network of mechanically flexible sensors that can conformally wrap irregular surfaces and spatially map and quantify various stimuli. Previous works on e-skin have focused on the optimization of pressure sensors interfaced with an electronic readout, whereas user interfaces based on a human-readable output were not explored. Here, we report the first user-interactive e-skin that not only spatially maps the applied pressure but also provides an instantaneous visual response through a built-in active-matrix organic light-emitting diode display with red, green and blue pixels. In this system, organic light-emitting diodes (OLEDs) are turned on locally where the surface is touched, and the intensity of the emitted light quantifies the magnitude of the applied pressure. This work represents a system-on-plastic demonstration where three distinct electronic components--thin-film transistor, pressure sensor and OLED arrays--are monolithically integrated over large areas on a single plastic substrate. The reported e-skin may find a wide range of applications in interactive input/control devices, smart wallpapers, robotics and medical/health monitoring devices.

Silver free III-nitride flip chip light-emitting-diode with wall plug efficiency over 70% utilizing a GaN tunnel junction

NASA Astrophysics Data System (ADS)

Yonkee, B. P.; Young, E. C.; DenBaars, S. P.; Nakamura, S.; Speck, J. S.

2016-11-01

A molecular beam epitaxy regrowth technique was demonstrated on standard industrial patterned sapphire substrate light-emitting diode (LED) epitaxial wafers emitting at 455 nm to form a GaN tunnel junction. By using an HF pretreatment on the wafers before regrowth, a voltage of 3.08 V at 20 A/cm2 was achieved on small area devices. A high extraction package was developed for comparison with flip chip devices which utilize an LED floating in silicone over a BaSO4 coated header and produced a peak external quantum efficiency (EQE) of 78%. A high reflectivity mirror was designed using a seven-layer dielectric coating backed by aluminum which has a calculated angular averaged reflectivity over 98% between 400 and 500 nm. This was utilized to fabricate a flip chip LED which had a peak EQE and wall plug efficiency of 76% and 73%, respectively. This flip chip could increase light extraction over a traditional flip chip LED due to the increased reflectivity of the dielectric based mirror.

The vertical-cavity surface-emitting laser incorporating a high contrast grating mirror as a sensing device

NASA Astrophysics Data System (ADS)

Marciniak, Magdalena; Gebski, Marcin; Piskorski, Łukasz; Dems, Maciej; Wasiak, M.; Panajotov, Krassimir; Lott, James A.; Czyszanowski, Tomasz

2018-02-01

We propose a novel optical sensing system based on one device that both emits and detects light consisting of a verticalcavity surface-emitting laser (VCSEL) incorporating an high contrast grating (HCG) as a top mirror. Since HCGs can be very sensitive to the optical properties of surrounding media, they can be used to detect gases and liquid. The presence of a gas or a liquid around an HCG mirror causes changes of the power reflectance of the mirror, which corresponds to changes of the VCSEL's cavity quality factor and current-voltage characteristic. By observation of the current-voltage characteristic we can collect information about the medium around the HCG. In this paper we investigate how the properties of the HCG mirror depend on the refractive index of the HCG surroundings. We present results of a computer simulation performed with a three-dimensional fully vectorial model. We consider silicon HCGs on silica and designed for a 1300 nm VCSEL emission wavelength. We demonstrate that our approach can be applied to other wavelengths and material systems.

Single-doped white organic light-emitting device with an external quantum efficiency over 20%.

PubMed

Fleetham, Tyler; Ecton, Jeremy; Wang, Zixing; Bakken, Nathan; Li, Jian

2013-05-14

A white OLED with a maximum EQE of 20.1%, CIE coordinates of (0.33, 0.33) and CRI of 80 is fabricated based on platinum(II) bis(N-methyl-imidazolyl)benzene chloride (Pt-16). The device emission spectrum and the chemical structure of Pt-16 are shown in the inset of the efficiency versus luminance graph. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Experimental demonstration of highly localized pulses (X waves) at microwave frequencies

NASA Astrophysics Data System (ADS)

Chiotellis, Nikolaos; Mendez, Victor; Rudolph, Scott M.; Grbic, Anthony

2018-02-01

A device that radiates transverse magnetic Bessel beams in the radiative near field is reported. The cone angle of the emitted radiation remains constant over a wide frequency range (18-30 GHz), allowing highly localized pulses (X waves) to be generated under a broadband excitation. The design process, based on ray optics, is discussed. Both frequency and time domain experimental results for a prototype are presented. The measured fields show close agreement with simulation results, and demonstrate the radiator's ability to emit X waves within its nondiffracting range.

Large Size Color-tunable Electroluminescence from Cationic Iridium Complexes-based Light-emitting Electrochemical Cells

PubMed Central

Zeng, Qunying; Li, Fushan; Guo, Tailiang; Shan, Guogang; Su, Zhongmin

2016-01-01

Solution-processable light-emitting electrochemical cells (LECs) with simple device architecture have become an attractive candidate for application in next generation lighting and flat-panel displays. Herein, single layer LECs employing two cationic Ir(III) complexes showing highly efficient blue-green and yellow electroluminescence with peak current efficiency of 31.6 cd A−1 and 40.6 cd A−1, respectively, have been reported. By using both complexes in the device, color-tunable LECs with a single spectral peak in the wavelength range from 499 to 570 nm were obtained by varying their rations. In addition, the fabrication of efficient LECs was demonstrated based on low cost doctor-blade coating technique, which was compatible with the roll to roll fabrication process for the large size production. In this work, for the first time, 4 inch LEC devices by doctor-blade coating were fabricated, which exhibit the efficiencies of 23.4 cd A−1 and 25.4 cd A−1 for the blue-green and yellow emission, respectively. The exciting results indicated that highly efficient LECs with controllable color could be realized and find practical application in large size lighting and displays. PMID:27278527

Exciton-Induced Degradation of Carbazole-Based Host Materials and Its Role in the Electroluminescence Spectral Changes in Phosphorescent Organic Light Emitting Devices with Electrical Aging.

PubMed

Yu, Hyeonghwa; Zhang, Yingjie; Cho, Yong Joo; Aziz, Hany

2017-04-26

We investigate the origins of the long-wavelength bands that appear in the emission spectra of carbazole-based host materials and play a role in the electroluminescence (EL) spectral changes of phosphorescent organic light emitting devices (PhOLEDs) with electrical aging. 4,4'-Bis(carbazol-9-yl)biphenyl (CBP) is used as a model carbazole host material and is studied using photoluminescence, EL, and atomic force microscopy measurements under various stress scenarios in both single and bilayer devices and in combination with various electron transport layer (ETL) materials. Results show that exciton-induced morphological aggregation of CBP is behind the appearance of those long-wavelength bands and that complexation between the aggregated CBP molecules and ETL molecules plays a role in this phenomenon. Comparisons between the effects of exciton and thermal stress suggest that exciton-induced aggregation may be limited to short-range molecular ordering or pairing (e.g., dimer or trimer species formation) versus longer-range ordering (crystallization) in the case of thermal stress. The findings provide new insights into exciton-induced degradation in wide band gap host materials and its role in limiting the stability of PhOLEDs.

The optimisation of the laser-induced forward transfer process for fabrication of polyfluorene-based organic light-emitting diode pixels

NASA Astrophysics Data System (ADS)

Shaw-Stewart, James; Mattle, Thomas; Lippert, Thomas; Nagel, Matthias; Nüesch, Frank; Wokaun, Alexander

2013-08-01

Laser-induced forward transfer (LIFT) has already been used to fabricate various types of organic light-emitting diodes (OLEDs), and the process itself has been optimised and refined considerably since OLED pixels were first demonstrated. In particular, a dynamic release layer (DRL) of triazene polymer has been used, the environmental pressure has been reduced down to a medium vacuum, and the donor receiver gap has been controlled with the use of spacers. Insight into the LIFT process's effect upon OLED pixel performance is presented here, obtained through optimisation of three-colour polyfluorene-based OLEDs. A marked dependence of the pixel morphology quality on the cathode metal is observed, and the laser transfer fluence dependence is also analysed. The pixel device performances are compared to conventionally fabricated devices, and cathode effects have been looked at in detail. The silver cathode pixels show more heterogeneous pixel morphologies, and a correspondingly poorer efficiency characteristics. The aluminium cathode pixels have greater green electroluminescent emission than both the silver cathode pixels and the conventionally fabricated aluminium devices, and the green emission has a fluence dependence for silver cathode pixels.

Organic light emitting device having multiple separate emissive layers

DOEpatents

Forrest, Stephen R [Ann Arbor, MI

2012-03-27

An organic light emitting device having multiple separate emissive layers is provided. Each emissive layer may define an exciton formation region, allowing exciton formation to occur across the entire emissive region. By aligning the energy levels of each emissive layer with the adjacent emissive layers, exciton formation in each layer may be improved. Devices incorporating multiple emissive layers with multiple exciton formation regions may exhibit improved performance, including internal quantum efficiencies of up to 100%.

Excitons and the lifetime of organic semiconductor devices.

PubMed

Forrest, Stephen R

2015-06-28

While excitons are responsible for the many beneficial optical properties of organic semiconductors, their non-radiative recombination within the material can result in material degradation due to the dumping of energy onto localized molecular bonds. This presents a challenge in developing strategies to exploit the benefits of excitons without negatively impacting the device operational stability. Here, we will briefly review the fundamental mechanisms leading to excitonic energy-driven device ageing in two example devices: blue emitting electrophosphorescent organic light emitting devices (PHOLEDs) and organic photovoltaic (OPV) cells. We describe strategies used to minimize or even eliminate this fundamental device degradation pathway. © 2015 The Author(s) Published by the Royal Society. All rights reserved.

Ultraviolet radiation emitted by lamps, TVs, tablets and computers: are there risks for the population?

PubMed

Duarte, Ida Alzira Gomes; Hafner, Mariana de Figueiredo Silva; Malvestiti, Andrey Augusto

2015-01-01

The frequent human exposure to various types of indoor lamps, as well as other light sources (television monitors, tablets and computers), raises a question: are there risks for the population? In the present study the emission of UVA and UVB radiation by lamps and screens of electronic devices were measured in order to determine the safe distance between the emitting source and the individual. We concluded that the lamps and electronic devices do not emit ultraviolet radiation; so they pose no health risk for the population.

Ultraviolet radiation emitted by lamps, TVs, tablets and computers: are there risks for the population?

PubMed Central

Duarte, Ida Alzira Gomes; Hafner, Mariana de Figueiredo Silva; Malvestiti, Andrey Augusto

2015-01-01

The frequent human exposure to various types of indoor lamps, as well as other light sources (television monitors, tablets and computers), raises a question: are there risks for the population? In the present study the emission of UVA and UVB radiation by lamps and screens of electronic devices were measured in order to determine the safe distance between the emitting source and the individual. We concluded that the lamps and electronic devices do not emit ultraviolet radiation; so they pose no health risk for the population. PMID:26375236

The role of commercial tanning beds and ultraviolet A light in the treatment of psoriasis.

PubMed

Su, Johanna; Pearce, Daniel J; Feldman, Steven R

2005-01-01

Phototherapy is an effective, safe psoriasis treatment administered via office-based units or home devices. There is controversy over the use of commercial tanning beds; ultraviolet B (UVB) has documented efficacy although commercial beds emit largely UVA. To determine the efficacy of UVA and the role of commercial tanning beds in treating psoriasis. A literature search of UVA and commercial tanning was performed. UVA can be effective for psoriasis, but achieving the high doses required may not be practical. Tanning beds do emit UVB although amounts are variable. Because of variability in UVA and UVB output in different tanning bulbs, it is difficult to predict response rates using commercial tanning beds. UVA can be used to treat psoriasis but may not be practical. Commercial tanning beds, emitting both UVA and UVB, have a role in treating psoriasis as an alternative to office-based therapy.

Low-threshold voltage ultraviolet light-emitting diodes based on (Al,Ga)N metal-insulator-semiconductor structures

NASA Astrophysics Data System (ADS)

Liang, Yu-Han; Towe, Elias

2017-12-01

Al-rich III-nitride-based deep-ultraviolet (UV) (275-320 nm) light-emitting diodes are plagued with a low emission efficiency and high turn-on voltages. We report Al-rich (Al,Ga)N metal-insulator-semiconductor UV light-emitting Schottky diodes with low turn-on voltages of <3 V, which are about half those of typical (Al,Ga)N p-i-n diodes. Our devices use a thin AlN film as the insulator and an n-type Al0.58Ga0.42N film as the semiconductor. To improve the efficiency, we inserted a GaN quantum-well structure between the AlN insulator and the n-type Al x Ga1- x N semiconductor. The benefits of the quantum-well structure include the potential to tune the emission wavelength and the capability to confine carriers for more efficient radiative recombination.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nurmikko, Arto V

Synthesis of semiconductor nanomaterials by low-cost, solution-based methods is shown to lead to new classes of thin film light emitting materials. These materials have been integrated to demonstrative compact laser device testbeds to illustrate their potential for coherent emitters across the visible spectrum to disrupt established photonics technologies, particularly semiconductor lasers?

Immune responses of a wall lizard to whole-body exposure to radiofrequency electromagnetic radiation.

PubMed

Mina, Despoina; Sagonas, Kostas; Fragopoulou, Adamantia F; Pafilis, Panayiotis; Skouroliakou, Aikaterini; Margaritis, Lukas H; Tsitsilonis, Ourania E; Valakos, Efstratios D

2016-01-01

During the last three decades, the number of devices that emit non-ionizing electromagnetic radiation (EMR) at the wireless communication spectrum has rapidly increased and possible effects on living organisms have become a major concern. The purpose of this study was to investigate the effects of radiofrequency EMR emitted by a widely used wireless communication device, namely the Digital Enhanced Communication Telephony (DECT) base, on the immune responses of the Aegean wall lizard (Podarcis erhardii). Adult male lizards were exposed 24 h/day for 8 weeks to 1880-1900 MHz DECT base radiation at average electric field intensity of 3.2 V/m. Immune reactivity was assessed using the phytohemagglutinin (PHA) skin swelling and mixed lymphocyte reaction (MLR) tests. Our results revealed a noticeable suppression (approximately 45%) of inflammatory responses in EMR-exposed lizards compared to sham-exposed animals. T cell-mediated responses were marginally affected. Daily radiofrequency EMR exposure seems to affect, at least partially, the immunocompetence of the Aegean wall lizard.

Fabrication of Si/ZnS radial nanowire heterojunction arrays for white light emitting devices on Si substrates.

PubMed

Katiyar, Ajit K; Sinha, Arun Kumar; Manna, Santanu; Ray, Samit K

2014-09-10

Well-separated Si/ZnS radial nanowire heterojunction-based light-emitting devices have been fabricated on large-area substrates by depositing n-ZnS film on p-type nanoporous Si nanowire templates. Vertically oriented porous Si nanowires on p-Si substrates have been grown by metal-assisted chemical etching catalyzed using Au nanoparticles. Isolated Si nanowires with needle-shaped arrays have been made by KOH treatment before ZnS deposition. Electrically driven efficient white light emission from radial heterojunction arrays has been achieved under a low forward bias condition. The observed white light emission is attributed to blue and green emission from the defect-related radiative transition of ZnS and Si/ZnS interface, respectively, while the red arises from the porous surface of the Si nanowire core. The observed white light emission from the Si/ZnS nanowire heterojunction could open up the new possibility to integrate Si-based optical sources on a large scale.

Broadly tunable terahertz generation in mid-infrared quantum cascade lasers.

PubMed

Vijayraghavan, Karun; Jiang, Yifan; Jang, Min; Jiang, Aiting; Choutagunta, Karthik; Vizbaras, Augustinas; Demmerle, Frederic; Boehm, Gerhard; Amann, Markus C; Belkin, Mikhail A

2013-01-01

Room temperature, broadly tunable, electrically pumped semiconductor sources in the terahertz spectral range, similar in operation simplicity to diode lasers, are highly desired for applications. An emerging technology in this area are sources based on intracavity difference-frequency generation in dual-wavelength mid-infrared quantum cascade lasers. Here we report terahertz quantum cascade laser sources based on an optimized non-collinear Cherenkov difference-frequency generation scheme that demonstrates dramatic improvements in performance. Devices emitting at 4 THz display a mid-infrared-to-terahertz conversion efficiency in excess of 0.6 mW W(-2) and provide nearly 0.12 mW of peak power output. Devices emitting at 2 and 3 THz fabricated on the same chip display 0.09 and 0.4 mW W(-2) conversion efficiencies at room temperature, respectively. High terahertz-generation efficiency and relaxed phase-matching conditions offered by the Cherenkov scheme allowed us to demonstrate, for the first time, an external-cavity terahertz quantum cascade laser source tunable between 1.70 and 5.25 THz.

Highly Efficient White Organic Light Emitting Diodes Using New Blue Fluorescence Emitter.

PubMed

Kim, Seungho; Kim, Beomjin; Lee, Jaehyun; Yu, Young-Jun; Park, Jongwook

2015-07-01

Two different emitting compounds, 1-[1,1';3',1"]Terphenyl-5'-yl-6-(10-[1,1';3',1"]terpheny-5'-yl- anthracen-9-yl)-pyrene (TP-AP-TP) and Poly-phenylene vinylene derivative (PDY 132) were used to white OLED device. By incorporating adjacent blue and yellow emitting layers in a multi-layered structure, highly efficient white emission has been attained. The device was fabricated with a hybrid configuration structure: ITO/PEDOT (40 nm)/PDY-132 (8-50 nm)/ NPB (10 nm)/TP-AP-TP (30 nm)/Alq3 (20 nm)/LiF (1 nm)/Al (200 nm). After fixing TP-AP-TP thickness of 30 nm by evaporation, PDY-132 thickness varied with 8, 15, 35, and 50 nm by spin coating in device. The luminance efficiency of the white devices at 10 mA/cm2 were 2.93 cd/A-6.55 cd/A. One of white devices showed 6.55 cd/A and white color of (0.290, 0.331).

Room temperature triplet state spectroscopy of organic semiconductors.

PubMed

Reineke, Sebastian; Baldo, Marc A

2014-01-21

Organic light-emitting devices and solar cells are devices that create, manipulate, and convert excited states in organic semiconductors. It is crucial to characterize these excited states, or excitons, to optimize device performance in applications like displays and solar energy harvesting. This is complicated if the excited state is a triplet because the electronic transition is 'dark' with a vanishing oscillator strength. As a consequence, triplet state spectroscopy must usually be performed at cryogenic temperatures to reduce competition from non-radiative rates. Here, we control non-radiative rates by engineering a solid-state host matrix containing the target molecule, allowing the observation of phosphorescence at room temperature and alleviating constraints of cryogenic experiments. We test these techniques on a wide range of materials with functionalities spanning multi-exciton generation (singlet exciton fission), organic light emitting device host materials, and thermally activated delayed fluorescence type emitters. Control of non-radiative modes in the matrix surrounding a target molecule may also have broader applications in light-emitting and photovoltaic devices.

Blue emitting 1,8-naphthalimides with electron transport properties for organic light emitting diode applications

NASA Astrophysics Data System (ADS)

Ulla, Hidayath; Kiran, M. Raveendra; Garudachari, B.; Ahipa, T. N.; Tarafder, Kartick; Adhikari, Airody Vasudeva; Umesh, G.; Satyanarayan, M. N.

2017-09-01

In this article, the synthesis, characterization and use of two novel naphthalimides as electron-transporting emitter materials for organic light emitting diode (OLED) applications are reported. The molecules were obtained by substituting electron donating chloro-phenoxy group at the C-4 position. A detailed optical, thermal, electrochemical and related properties were systematically studied. Furthermore, theoretical calculations (DFT) were performed to get a better understanding of the electronic structures. The synthesized molecules were used as electron transporters and emitters in OLEDs with three different device configurations. The devices with the molecules showed blue emission with efficiencies of 1.89 cdA-1, 0.98 lmW-1, 0.71% at 100 cdm-2. The phosphorescent devices with naphthalimides as electron transport materials displayed better performance in comparison to the device without any electron transporting material and were analogous with the device using standard electron transporting material, Alq3. The results demonstrate that the naphthalimides could play a significant part in the progress of OLEDs.

Gamma-ray blind beta particle probe

DOEpatents

Weisenberger, Andrew G.

2001-01-01

An intra-operative beta particle probe is provided by placing a suitable photomultiplier tube (PMT), micro channel plate (MCP) or other electron multiplier device within a vacuum housing equipped with: 1) an appropriate beta particle permeable window; and 2) electron detection circuitry. Beta particles emitted in the immediate vicinity of the probe window will be received by the electron multiplier device and amplified to produce a detectable signal. Such a device is useful as a gamma insensitive, intra-operative, beta particle probe in surgeries where the patient has been injected with a beta emitting radiopharmaceutical. The method of use of such a device is also described, as is a position sensitive such device.

Single-photon emitting diode in silicon carbide.

PubMed

Lohrmann, A; Iwamoto, N; Bodrog, Z; Castelletto, S; Ohshima, T; Karle, T J; Gali, A; Prawer, S; McCallum, J C; Johnson, B C

2015-07-23

Electrically driven single-photon emitting devices have immediate applications in quantum cryptography, quantum computation and single-photon metrology. Mature device fabrication protocols and the recent observations of single defect systems with quantum functionalities make silicon carbide an ideal material to build such devices. Here, we demonstrate the fabrication of bright single-photon emitting diodes. The electrically driven emitters display fully polarized output, superior photon statistics (with a count rate of >300 kHz) and stability in both continuous and pulsed modes, all at room temperature. The atomic origin of the single-photon source is proposed. These results provide a foundation for the large scale integration of single-photon sources into a broad range of applications, such as quantum cryptography or linear optics quantum computing.

Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer

DOEpatents

Spahn, O.B.; Lear, K.L.

1998-03-10

The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g., Al{sub 2}O{sub 3}), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3--1.6 {mu}m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation. 10 figs.

Semiconductor structures having electrically insulating and conducting portions formed from an AlSb-alloy layer

DOEpatents

Spahn, Olga B.; Lear, Kevin L.

1998-01-01

A semiconductor structure. The semiconductor structure comprises a plurality of semiconductor layers formed on a substrate including at least one layer of a III-V compound semiconductor alloy comprising aluminum (Al) and antimony (Sb), with at least a part of the AlSb-alloy layer being chemically converted by an oxidation process to form superposed electrically insulating and electrically conducting portions. The electrically insulating portion formed from the AlSb-alloy layer comprises an oxide of aluminum (e.g. Al.sub.2 O.sub.3), while the electrically conducting portion comprises Sb. A lateral oxidation process allows formation of the superposed insulating and conducting portions below monocrystalline semiconductor layers for forming many different types of semiconductor structures having particular utility for optoelectronic devices such as light-emitting diodes, edge-emitting lasers, vertical-cavity surface-emitting lasers, photodetectors and optical modulators (waveguide and surface normal), and for electronic devices such as heterojunction bipolar transistors, field-effect transistors and quantum-effect devices. The invention is expected to be particularly useful for forming light-emitting devices for use in the 1.3-1.6 .mu.m wavelength range, with the AlSb-alloy layer acting to define an active region of the device and to effectively channel an electrical current therein for efficient light generation.

Surface morphological, structural, electrical and optical properties of GaN-based light-emitting diodes using submicron-scaled Ag islands and ITO thin films

NASA Astrophysics Data System (ADS)

Lee, Young-Woong; Reddy, M. Siva Pratap; Kim, Bo-Myung; Park, Chinho

2018-07-01

An ITO-Ag islands complex as a new transparent conducting electrode (TCE) structure (on the 5 nm-thick p-InGaN/90 nm-thick p-GaN) for achieving high-performance and more reliable GaN-based LEDs were fabricated. A normal LED with a conventional ITO TCE was also compared. The surface morphological, structural, electrical and optical properties of fabricated GaN-based light-emitting diodes using a complex electrode of submicron-scaled Ag islands and ITO thin films are explored by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), current-voltage (I-V) and output power-current (L-I) techniques. Surface morphology investigations revealed Ag islands formed uniformly on the p-InGaN/p-GaN surface during rapid thermal annealing at 400 °C for 1 min in N2 ambient. The ohmic properties and overall device-performance of the suggested contact and device structures were superior to those in the conventional ITO contact and normal ITO LED structures. Based on the results of XRD and XPS measurements, the formation of the intermetallic gallide phases (AgGa) is responsible for better performance characteristics of the ITO-Ag islands device. The significant improvements are described in terms of the conducting bridge influence, highly effective micro-mirror effect, and wider photon window via the roughened structure.

Quantum Dot Light-Emitting Devices: Beyond Alignment of Energy Levels

DOE PAGES

Zaiats, Gary; Ikeda, Shingo; Kinge, Sachin; ...

2017-08-25

Multinary semiconductor nanoparticles such as CuInS 2, AgInS 2, and the corresponding alloys with ZnS hold promise for designing future quantum dot light-emitting devices (QLED). The QLED architectures require matching of energy levels between the different electron and hole transport layers. In addition to energy level alignment, conductivity and charge transfer interactions within these layers determine the overall efficiency of QLED. By employing CuInS 2-ZnS QDs we succeeded in fabricating red-emitting QLED using two different hole-transporting materials, polyvinylcarbazole and poly(4- butylphenyldiphenylamine). Despite the similarity of the HOMO-LUMO energy levels of these two hole transport materials, the QLED devices exhibit distinctlymore » different voltage dependence. The difference in onset voltage and excited state interactions shows the complexity involved in selecting the hole transport materials for display devices.« less

Quantum Dot Light-Emitting Devices: Beyond Alignment of Energy Levels

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zaiats, Gary; Ikeda, Shingo; Kinge, Sachin

Multinary semiconductor nanoparticles such as CuInS 2, AgInS 2, and the corresponding alloys with ZnS hold promise for designing future quantum dot light-emitting devices (QLED). The QLED architectures require matching of energy levels between the different electron and hole transport layers. In addition to energy level alignment, conductivity and charge transfer interactions within these layers determine the overall efficiency of QLED. By employing CuInS 2-ZnS QDs we succeeded in fabricating red-emitting QLED using two different hole-transporting materials, polyvinylcarbazole and poly(4- butylphenyldiphenylamine). Despite the similarity of the HOMO-LUMO energy levels of these two hole transport materials, the QLED devices exhibit distinctlymore » different voltage dependence. The difference in onset voltage and excited state interactions shows the complexity involved in selecting the hole transport materials for display devices.« less

Smartphone-based low light detection for bioluminescence application.

PubMed

Kim, Huisung; Jung, Youngkee; Doh, Iyll-Joon; Lozano-Mahecha, Roxana Andrea; Applegate, Bruce; Bae, Euiwon

2017-01-09

We report a smartphone-based device and associated imaging-processing algorithm to maximize the sensitivity of standard smartphone cameras, that can detect the presence of single-digit pW of radiant flux intensity. The proposed hardware and software, called bioluminescent-based analyte quantitation by smartphone (BAQS), provides an opportunity for onsite analysis and quantitation of luminescent signals from biological and non-biological sensing elements which emit photons in response to an analyte. A simple cradle that houses the smartphone, sample tube, and collection lens supports the measuring platform, while noise reduction by ensemble averaging simultaneously lowers the background and enhances the signal from emitted photons. Five different types of smartphones, both Android and iOS devices, were tested, and the top two candidates were used to evaluate luminescence from the bioluminescent reporter Pseudomonas fluorescens M3A. The best results were achieved by OnePlus One (android), which was able to detect luminescence from ~10 6  CFU/mL of the bio-reporter, which corresponds to ~10 7 photons/s with 180 seconds of integration time.

Smartphone-based low light detection for bioluminescence application

NASA Astrophysics Data System (ADS)

Kim, Huisung; Jung, Youngkee; Doh, Iyll-Joon; Lozano-Mahecha, Roxana Andrea; Applegate, Bruce; Bae, Euiwon

2017-01-01

We report a smartphone-based device and associated imaging-processing algorithm to maximize the sensitivity of standard smartphone cameras, that can detect the presence of single-digit pW of radiant flux intensity. The proposed hardware and software, called bioluminescent-based analyte quantitation by smartphone (BAQS), provides an opportunity for onsite analysis and quantitation of luminescent signals from biological and non-biological sensing elements which emit photons in response to an analyte. A simple cradle that houses the smartphone, sample tube, and collection lens supports the measuring platform, while noise reduction by ensemble averaging simultaneously lowers the background and enhances the signal from emitted photons. Five different types of smartphones, both Android and iOS devices, were tested, and the top two candidates were used to evaluate luminescence from the bioluminescent reporter Pseudomonas fluorescens M3A. The best results were achieved by OnePlus One (android), which was able to detect luminescence from ~106 CFU/mL of the bio-reporter, which corresponds to ~107 photons/s with 180 seconds of integration time.

Smartphone-based low light detection for bioluminescence application

PubMed Central

Kim, Huisung; Jung, Youngkee; Doh, Iyll-Joon; Lozano-Mahecha, Roxana Andrea; Applegate, Bruce; Bae, Euiwon

2017-01-01

We report a smartphone-based device and associated imaging-processing algorithm to maximize the sensitivity of standard smartphone cameras, that can detect the presence of single-digit pW of radiant flux intensity. The proposed hardware and software, called bioluminescent-based analyte quantitation by smartphone (BAQS), provides an opportunity for onsite analysis and quantitation of luminescent signals from biological and non-biological sensing elements which emit photons in response to an analyte. A simple cradle that houses the smartphone, sample tube, and collection lens supports the measuring platform, while noise reduction by ensemble averaging simultaneously lowers the background and enhances the signal from emitted photons. Five different types of smartphones, both Android and iOS devices, were tested, and the top two candidates were used to evaluate luminescence from the bioluminescent reporter Pseudomonas fluorescens M3A. The best results were achieved by OnePlus One (android), which was able to detect luminescence from ~106 CFU/mL of the bio-reporter, which corresponds to ~107 photons/s with 180 seconds of integration time. PMID:28067287

The possible ocular hazards of LED dental illumination applications.

PubMed

Stamatacos, Catherine; Harrison, Janet L

2014-04-01

The use of high-intensity illumination via Light-Emitting Diode (LED) headlamps is gaining in popularity with dentists and student dentists. Practitioners are using LED headlamps together with magnifying loupes, overhead LED illumination and fiber-optic dental handpieces for long periods of time. Although most manufacturers of these LED illuminators advertise that their devices emit "white" light, these still consist of two spectral bands - the blue spectral band, with its peak at 445 nm, and the green with its peak at 555 nm. While manufacturers suggest that their devices emit "white" light, spectral components of LED lights from different companies are significantly different. Dental headlamp manufacturers strive to create a white LED, and they advertise that this type of light emitted from their product offers bright white-light illumination. However, the manufacturing of a white LED light is done through selection of a white LED-type based on the peak blue strength in combination with the green peak strength and thus creating a beam-forming optic, which determines the beam quality. Some LED illuminators have a strong blue-light component versus the green-light component. Blue-light is highly energized and is close in the color spectrum to ultraviolet-light. The hazards of retinal damage with the use of high-intensity blue-lights has been well-documented. There is limited research regarding the possible ocular hazards of usage of high-intensity illuminating LED devices. Furthermore, the authors have found little research, standards, or guidelines examining the possible safety issues regarding the unique dental practice setting consisting of the combined use of LED illumination systems. Another unexamined component is the effect of high-intensity light reflective glare and magnification back to the practitioner's eyes due to the use of water during dental procedures. Based on the result of Dr. Janet Harrison's observations of beginning dental students in a laboratory setting, the aim of this review is to raise awareness of the potential risk for eye damage when singular or combinations of LED illumination are used.

The possible ocular hazards of LED dental illumination applications.

PubMed

Stamatacos, Catherine; Harrison, Janet L

2013-01-01

The use of high-intensity illumination via Light-Emitting Diode (LED) headlamps is gaining in popularity with dentists and student dentists. Practitioners are using LED headlamps together with magnifying loupes, overhead LED illumination and fiber-optic dental handpieces for long periods of time. Although most manufacturers of these LED illuminators advertise that their devices emit "white" light, these still consist of two spectral bands--the blue spectral band, with its peak at 445 nm, and the green with its peak at 555 nm. While manufacturers suggest that their devices emit "white" light, spectral components of LED lights from different companies are significantly different. Dental headlamp manufacturers strive to create a white LED, and they advertise that this type of light emitted from their product offers bright white-light illumination. However, the manufacturing of a white LED light is done through selection of a white LED-type based on the peak blue strength in combination with the green peak strength and thus creating a beam-forming optic, which determines the beam quality. Some LED illuminators have a strong blue-light component versus the green-light component. Blue-light is highly energized and is close in the color spectrum to ultraviolet-light. The hazards of retinal damage with the use of high-intensity blue-lights has been well-documented. There is limited research regarding the possible ocular hazards of usage of high-intensity illuminating LED devices. Furthermore, the authors have found little research, standards, or guidelines examining the possible safety issues regarding the unique dental practice setting consisting of the combined use of LED illumination systems. Another unexamined component is the effect of high-intensity light reflective glare and magnification back to the practitioner's eyes due to the use of water during dental procedures. Based on the result of Dr. Janet Harrison's observations of beginning dental students in a laboratory setting, the aim of this review is to raise awareness of the potential risk for eye damage when singular or combinations of LED illumination are used.

Technologies for thermal management of mid-IR Sb-based surface emitting lasers

NASA Astrophysics Data System (ADS)

Perez, J.-P.; Laurain, A.; Cerutti, L.; Sagnes, I.; Garnache, A.

2010-04-01

In this paper, for the first time to our knowledge, we report and demonstrate the technological steps dedicated to thermal management of antimonide-based surface emitting laser devices grown by molecular beam epitaxy. Key points of the technological process are firstly the bonding of the structure on the SiC host substrate and secondly the GaSb substrate removal to leave the Sb-based membrane. The structure design (etch stop layer, metallic mirror, etc), bonding process (metallic bonding via solid-liquid interdiffusion) and GaSb substrate removal process (selective wet-chemical etchants, etc) are presented. Optical characterizations together with external-cavity VCSEL laser emission at 2.3 µm at room temperature in continuous wave are presented.

Efficient exciton generation in atomic passivated CdSe/ZnS quantum dots light-emitting devices

PubMed Central

Kang, Byoung-Ho; Lee, Jae-Sung; Lee, Sang-Won; Kim, Sae-Wan; Lee, Jun-Woo; Gopalan, Sai-Anand; Park, Ji-Sub; Kwon, Dae-Hyuk; Bae, Jin-Hyuk; Kim, Hak-Rin; Kang, Shin-Won

2016-01-01

We demonstrate the first-ever surface modification of green CdSe/ZnS quantum dots (QDs) using bromide anions (Br-) in cetyl trimethylammonium bromide (CTAB). The Br- ions reduced the interparticle spacing between the QDs and induced an effective charge balance in QD light-emitting devices (QLEDs). The fabricated QLEDs exhibited efficient charge injection because of the reduced emission quenching effect and their enhanced thin film morphology. As a result, they exhibited a maximum luminance of 71,000 cd/m2 and an external current efficiency of 6.4 cd/A, both significantly better than those of their counterparts with oleic acid surface ligands. In addition, the lifetime of the Br- treated QD based QLEDs is significantly improved due to ionic passivation at the QDs surface. PMID:27686147

Red phosphorescent organic light-emitting diodes based on the simple structure.

PubMed

Seo, Ji Hyun; Lee, Seok Jae; Kim, Bo Young; Choi, Eun Young; Han, Wone Keun; Lee, Kum Hee; Yoon, Seung Soo; Kim, Young Kwan

2012-05-01

We demonstrated that the simple layered red phosphorescent organic light-emitting diodes (OLEDs) are possible to have high efficiency, low driving voltage, stable roll-off efficiency, and pure emission color without hole injection and transport layers. We fabricated the OLEDs with a structure of ITO/CBP doped with Ir(pq)2(acac)/BPhen/Liq/Al, where the doping concentration of red dopant, Ir(pq)2(acac), was varied from 4% to 20%. As a result, the quantum efficiencies of 13.4, 11.2, 16.7, 10.8 and 9.8% were observed in devices with doping concentrations of 4, 8, 12, 16 and 20%, respectively. Despite of absence of the hole injection and transport layers, these efficiencies are superior to efficiencies of device with hole transporting layer due to direct hole injection from anode to dopant in emission layer.

Design and fabrication of AlGaInP-based micro-light-emitting-diode array devices

NASA Astrophysics Data System (ADS)

Bao, Xingzhen; Liang, Jingqiu; Liang, Zhongzhu; Wang, Weibiao; Tian, Chao; Qin, Yuxin; Lü, Jinguang

2016-04-01

An integrated high-resolution (individual pixel size 80 μm×80 μm) solid-state self-emissive active matrix programmed with 320×240 micro-light-emitting-diode arrays structure was designed and fabricated on an AlGaInP semiconductor chip using micro electro-mechanical systems, microstructure and semiconductor fabricating techniques. Row pixels share a p-electrode and line pixels share an n-electrode. We experimentally investigated GaAs substrate thickness affects the electrical and optical characteristics of the pixels. For a 150-μm-thick GaAs substrate, the single pixel output power was 167.4 μW at 5 mA, and increased to 326.4 μW when current increase to 10 mA. The device investigated potentially plays an important role in many fields.

Flexible deep-ultraviolet light-emitting diodes for significant improvement of quantum efficiencies by external bending

NASA Astrophysics Data System (ADS)

Shervin, Shahab; Oh, Seung Kyu; Park, Hyun Jung; Lee, Keon-Hwa; Asadirad, Mojtaba; Kim, Seung-Hwan; Kim, Jeomoh; Pouladi, Sara; Lee, Sung-Nam; Li, Xiaohang; Kwak, Joon Seop; Ryou, Jae-Hyun

2018-03-01

We report a new route to improve quantum efficiencies of AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) using mechanical flexibility of recently developed bendable thin-film structures. Numerical studies show that electronic band structures of AlGaN heterostructures and resulting optical and electrical characteristics of the devices can be significantly modified by external bending through active control of piezoelectric polarization. Internal quantum efficiency is enhanced higher than three times, when the DUV LEDs are moderately bent with concave curvatures. Furthermore, an efficiency droop at high injection currents is mitigated and turn-on voltage of diodes decreases with the same bending condition. The concept of bendable DUV LEDs with a controlled external strain can provide a new path for high-output-power and high-efficiency devices.

Anthracene-Based Organic Small-Molecule Electron-Injecting Material for Inverted Organic Light-Emitting Diodes.

PubMed

Matsuo, Yutaka; Okada, Hiroshi; Kondo, Yasuhiro; Jeon, Il; Wang, Huan; Yu, Yun; Matsushita, Takeshi; Yanai, Motoki; Ikuta, Toshiaki

2018-04-11

A diphenylanthracene dimethylamine derivative (9-{3,5-di( N, N-dimethylaminoethoxy)phenyl}-10-phenyl-anthracene, DPAMA) was synthesized by the Suzuki-Miyaura cross-coupling reaction. Its ammonium salt, 9-{3,5-di(trimethylammonium ethoxy)phenyl}-10-phenyl-anthracene dichloride (DPAMA-Cl), was also synthesized as a reference material. DPAMA was characterized by UV-vis and fluorescence spectroscopy, cyclic voltammetry, photoelectron yield spectroscopy, and X-ray photoelectron spectroscopy to evaluate the work function-modifying ability of DPAMA on indium tin oxide (ITO) and ZnO. The work functions of ITO and ZnO changed from 4.4 and 4.0 eV (pristine) to 3.8 and 3.9 eV, respectively. Using this surface modification effect of DPAMA, inverted organic light-emitting diodes were fabricated with device structures of ITO/DPAMA/Alq 3 /NPD/MoO 3 /Al (Alq 3 = tris(8-hydroxyquinolinato)aluminum; NPD = N, N'-di-[(1-naphthyl)- N, N'-diphenyl]-1,1'-(biphenyl)-4,4'-diamine) and ITO/ZnO/DPAMA/Alq 3 /NPD/MoO 3 /Al. Both devices showed good performance at the range of current density, 1-300 mA/cm 2 . The best inverted organic light-emitting diodes device showed luminance of 7720 cd/m 2 , current efficiency of 4.51 cd/A, and external quantum efficiency of 1.45%. Also, poly(3-hexylthiophene):mixed phenyl-C 61 and C 71 butyric acid methyl ester-based organic solar cells using DPAMA and DPAMA-Cl as electron-transporting materials showed power conversion efficiencies of 3.3 and 3.4%, respectively.

Highly Efficient Red and White Organic Light-Emitting Diodes with External Quantum Efficiency beyond 20% by Employing Pyridylimidazole-Based Metallophosphors.

PubMed

Miao, Yanqin; Tao, Peng; Wang, Kexiang; Li, Hongxin; Zhao, Bo; Gao, Long; Wang, Hua; Xu, Bingshe; Zhao, Qiang

2017-11-01

Two highly efficient red neutral iridium(III) complexes, Ir1 and Ir2, were rationally designed and synthesized by selecting two pyridylimidazole derivatives as the ancillary ligands. Both Ir1 and Ir2 show nearly the same photoluminescence emission with the maximum peak at 595 nm (shoulder band at about 638 nm) and achieve high solution quantum yields of up to 0.47 for Ir1 and 0.57 for Ir2. Employing Ir1 and Ir2 as emitters, the fabricated red organic light-emitting diodes (OLEDs) show outstanding performance with the maximum external quantum efficiency (EQE), current efficiency (CE), and power efficiency (PE) of 20.98%, 33.04 cd/A, and 33.08 lm/W for the Ir1-based device and 22.15%, 36.89 cd/A, and 35.85 lm/W for the Ir2-based device, respectively. Furthermore, using Ir2 as red emitter, a trichromatic hybrid white OLED, showing good warm white emission with low correlated color temperature of <2200 K under the voltage of 4-6 V, was fabricated successfully. The white device also realizes excellent device efficiencies with the maximum EQE, CE, and PE reaching 22.74%, 44.77 cd/A, and 46.89 lm/W, respectively. Such high electroluminescence performance for red and white OLEDs indicates that Ir1 and Ir2 as efficient red phosphors have great potential for future OLED displays and lightings applications.

Transport and recombination in organic light-emitting diodes studied by electrically detected magnetic resonance.

PubMed

Graeff, C F O; Silva, G B; Nüesch, F; Zuppiroli, L

2005-09-01

We have used electrically detected magnetic resonance (EDMR) to study a series of multilayer organic devices based on aluminum (III) 8-hydroxyquinoline (Alq3). These devices were designed to identify the microscopic origin of different spin-dependent processes, i.e. hopping and exciton formation. The EDMR signal in organic light-emitting diodes (OLEDs) based on Alq3 is only observed when the device is electroluminescent and is assigned to spin-dependent exciton formation. It can be decomposed in at least two Gaussians: one with peak-to-peak line (deltaH(PP)) of 1.6 mT and another with deltaH(PP) of 2.0 to 3.4 mT, depending on bias and temperature. The g-factors of the two components are barely distinguishable and close to 2.003. The broad line is attributed to the resonance in Alq3 anions, while the other line is attributed to cationic states. These attributions are supported by line shape and its electrical-field dependence of unipolar Alq3-based diodes, where hopping process related to dication and dianion formation is observed. In these unipolar devices, it is shown that the signal coming from spin-dependent hopping occurs close to organic semiconductor/metal interfaces. The sign of the magnetic-resonance-induced conductivity change is dominated by charge injection rather than charge mobility. Our results indicate that the probability of singlet exciton formation in our OLEDs is smaller than 25%.

Design and fabrication of one-dimensional and two- dimensional photonic bandgap devices

NASA Astrophysics Data System (ADS)

Lim, Kuo-Yi

1999-10-01

One-dimensional and two-dimensional photonic bandgap devices have been designed and fabricated using III-V compound semiconductors. The one-dimensional photonic bandgap devices consist of monorail and air-bridge waveguide microcavities, while the two-dimensional photonic bandgap devices consist of light-emitting devices with enhanced extraction efficiency. Fabrication techniques such as gas source molecular beam epitaxy, direct-write electron-beam lithography, reactive ion etching and thermal oxidation of AlxGa1- xAs have been employed. The III-V thermal oxide, in particular, is used as an index confinement material, as a sacrificial material for micromechanical fabrication of the air-bridge microcavity, and in the realization of a wide-bandwidth distributed Bragg reflector. The one-dimensional photonic bandgap waveguide microcavities have been designed to operate in the wavelength regimes of 4.5 m m and 1.55 m m. The devices designed to operate in the 1.55 m m wavelength regime have been optically characterized. The transmission spectra exhibit resonances at around 1.55 m m and cavity quality factors (Q's) ranging from 136 to 334. The resonant modal volume is calculated to be about 0.056 m m3. Tunability in the resonance wavelengths has also been demonstrated by changing the size of the defect in the one-dimensional photonic crystal. The two-dimensional photonic bandgap light-emitting device consists of a In0.51Ga0.49P/In0.2Ga0.8As/In 0.51Ga0.49P quantum well emitting at 980nm with a triangular photonic lattice of holes in the top cladding layer of the quantum well. The photonic crystal prohibits the propagation of guided modes in the semiconductor, thus enhancing the extraction of light vertical to the light-emitting device. A wide-bandwidth GaAs/AlxOy distributed Bragg reflector mirror under the quantum well structure further enhances the extraction of light from the devices. The extraction efficiency of the two-dimensional photonic bandgap light-emitting device is expected to be at least 5 times that of a device without the two-dimensional photonic crystal. A photoluminescence measurement setup has been modified to optically characterize these devices. (Copies available exclusively from MIT Libraries, Rm. 14-0551, Cambridge, MA 02139-4307. Ph. 617-253-5668; Fax 617-253-1690.)

Optical, electrical, and magnetic field studies of organic materials for light emitting diodes and photovoltaic applications

NASA Astrophysics Data System (ADS)

Basel, Tek Prasad

We studied optical, electrical, and magnetic field responses of films and devices based on organic semiconductors that are used for organic light emitting diodes (OLEDs) and photovoltaic (OPV) solar cell applications. Our studies show that the hyperfine interaction (HFI)-mediated spin mixing is the key process underlying various magnetic field effects (MFE) and spin transport in aluminum tris(8-hydroxyquinoline)[Alq3]-based OLEDs and organic spin-valve (OSV). Conductivity-detected magnetic resonance in OLEDs and magneto-resistance (MR) in OSVs show substantial isotope dependence. In contrast, isotope-insensitive behavior in the magneto-conductance (MC) of same devices is explained by the collision of spin ½ carriers with triplet polaron pairs. We used steady state optical spectroscopy for studying the energy transfer dynamics in films and OLEDs based on host-guest blends of the fluorescent polymer and phosphorescent molecule. We have also studied the magnetic-field controlled color manipulation in these devices, which provide a strong proof for the `polaron-pair' mechanism underlying the MFE in organic devices. The critical issue that hampers organic spintronics device applications is significant magneto-electroluminescence (MEL) at room temperature (RT). Whereas inorganic spin valves (ISVs) show RT magneto-resistance, MR>80%, however, the devices do not exhibit electroluminescence (EL). In contrast, OLEDs show substantive EL emission, and are particularly attractive because of their flexibility, low cost, and potential for multicolor display. We report a conceptual novel hybrid organic/inorganic spintronics device (h-OLED), where we employ both ISV with large MR at RT, and OLED that has efficient EL emission. We investigated the charge transfer process in an OPV solar cell through optical, electrical, and magnetic field measurements of thin films and devices based on a low bandgap polymer, PTB7 (fluorinated poly-thienothiophene-benzodithiophene). We found that one of the major losses that limit the power conversion efficiency of OPV devices is the formation of triplet excitons in the polymer through recombination of charge-transfer (CT) excitons at the interface, and presented a method to suppress the dissociation of CT states by incorporating the spin ½ additive, galvinoxyl in the bulk heterojunction architecture of the active organic blend layer.

Flexible organic light-emitting devices with a smooth and transparent silver nanowire electrode

NASA Astrophysics Data System (ADS)

Cui, Hai-Feng; Zhang, Yi-Fan; Li, Chuan-Nan

2014-07-01

We demonstrate a flexible organic light-emitting device (OLED) by using silver nanowire (AgNW) transparent electrode. A template stripping process has been employed to fabricate the AgNW electrode on a photopolymer substrate. From this approach, a random AgNW network electrode can be transferred to the flexible substrate and its roughness has been successfully decreased. As a result, the devices obtained by this method exhibit high efficiency. In addition, the flexible OLEDs keep good performance under a small bending radius.

Rosin-enabled ultraclean and damage-free transfer of graphene for large-area flexible organic light-emitting diodes

PubMed Central

Zhang, Zhikun; Du, Jinhong; Zhang, Dingdong; Sun, Hengda; Yin, Lichang; Ma, Laipeng; Chen, Jiangshan; Ma, Dongge; Cheng, Hui-Ming; Ren, Wencai

2017-01-01

The large polymer particle residue generated during the transfer process of graphene grown by chemical vapour deposition is a critical issue that limits its use in large-area thin-film devices such as organic light-emitting diodes. The available lighting areas of the graphene-based organic light-emitting diodes reported so far are usually <1 cm2. Here we report a transfer method using rosin as a support layer, whose weak interaction with graphene, good solubility and sufficient strength enable ultraclean and damage-free transfer. The transferred graphene has a low surface roughness with an occasional maximum residue height of about 15 nm and a uniform sheet resistance of 560 Ω per square with about 1% deviation over a large area. Such clean, damage-free graphene has produced the four-inch monolithic flexible graphene-based organic light-emitting diode with a high brightness of about 10,000 cd m−2 that can already satisfy the requirements for lighting sources and displays. PMID:28233778

Low-Cost Charged-Coupled Device (CCD) Based Detectors for Shiga Toxins Activity Analysis.

PubMed

Rasooly, Reuven; Prickril, Ben; Bruck, Hugh A; Rasooly, Avraham

2017-01-01

To improve food safety there is a need to develop simple, low-cost sensitive devices for detection of food-borne pathogens and their toxins. We describe a simple, low-cost webcam-based detector which can be used for various optical detection modalities, including fluorescence, chemiluminescence, densitometry, and colorimetric assays. The portable battery-operated CCD-based detection system consists of four modules: (1) a webcam to measure and record light emission, (2) a sample plate to perform assays, (3) a light emitting diode (LED) for illumination, and (4) a portable computer to acquire and analyze images. To demonstrate the technology, we used a cell based assay for fluorescence detection of the activity of the food borne Shiga toxin type 2 (Stx2), differentiating between biologically active toxin and inactive toxin which is not a risk. The assay is based on Shiga toxin inhibition of cell protein synthesis measured through inhibition of the green fluorescent protein (GFP). In this assay, GFP emits light at 509 nm when excited with a blue LED equipped with a filter at 486 nm. The emitted light is then detected with a green filter at 535 nm. Toxin activity is measured through a reduction in the 509 nm emission. In this system the level of detection (LOD) for Stx2 was 0.1 pg/ml, similar to the LOD of commercial fluorometers. These results demonstrate the utility and potential of low cost detectors for toxin activity. This approach could be readily adapted to the detection of other food-borne toxins.

Multifunctional organic thin films and their electronic/optical properties

NASA Astrophysics Data System (ADS)

Shao, Yan

The concept of multifunctional organic thin films and their electronic/optical properties has been applied to organic functional device design, fabrication, and characterization. The organic devices involve organic light-emitting diodes (OLEDs) and organic photovoltaic devices (OPV) in this dissertation. In the research of graded junction structure of OLEDs, two kinds of naturally-formed graded junction (NFGJ) structures, sharp and shallow graded junctions, can be formed using single thermal evaporation boat loaded with uniformly mixed charge transport and light-emitting materials. OLEDs with NFGJ have been demonstrated in Chapter 3; the performance is comparable to the heterojunction OLEDs, but with better device lifetime. A novel method to prepare highly uniform mixed organic solid solutions through a high temperature and high-pressure fusion process has been demonstrated in Chapter 4. A series of fused organic solid solution (FOSS) compounds with NPD doped with different organic emitting dopants were prepared and DSC technique was utilized to determine the thermal characteristics. For the first time, the schematic phase diagram for this binary system has been obtained. High performance OLEDs of single color and white emission were fabricated and the device properties were characterized. In Chapter 5, an efficient photovoltaic heterojunction of tetracene and fullerene has been investigated and high performance organic solar cells have been demonstrated by thermal deposition and successive heat treatment. The preliminary conclusion for this enhancement is discussed and supported by atomic force microscopy images, absorption spectra and x-ray diffraction analysis. Additionally, an effective organic photovoltaic heterojunction based on the typical triplet material PtOEP was demonstrated. It is believed that introducing appropriate organic materials with long exciton lifetime is a very promising way to improve photovoltaic performance.

Portable device for the detection of nitro-explosives based on optical properties of sensor's material

NASA Astrophysics Data System (ADS)

Baranova, A. A.; Khokhlov, K. O.

2014-11-01

The aim of this study was to design a device for explosives detection. The study design is based on excited steady-state luminescence quenching registration. Sensor's material luminescence intensity reduction occurs due to an interaction of explosives vapours contained in the air. The decrease rate of the luminescence intensity indicates the concentration of vapours. To study the luminescent properties of the sensor element, its luminescence spectra excited by photons with energies in the range 280 - 425 nm were measured. The excitation photoluminescence spectra for luminescence bands of the sensor element were also measured. Excitation source was light emitting diode (375 nm) and luminescent signal receiver was a photodiode (430 - 650 nm) in device designed. The device is operated under control of a program. The algorithm provides multiple operating modes (configuration, calibration, measurement etc.). Thus this device is referred to the class of devices with increased sensitivity to the explosives vapors. The advantages of device are autonomic power, small weight and sizes, simplicity of device operation for measurements.

Broadband mid-infrared superlattice light-emitting diodes

NASA Astrophysics Data System (ADS)

Ricker, R. J.; Provence, S. R.; Norton, D. T.; Boggess, T. F.; Prineas, J. P.

2017-05-01

InAs/GaSb type-II superlattice light-emitting diodes were fabricated to form a device that provides emission over the entire 3-5 μm mid-infrared transmission window. Variable bandgap emission regions were coupled together using tunnel junctions to emit at peak wavelengths of 3.3 μm, 3.5 μm, 3.7 μm, 3.9 μm, 4.1 μm, 4.4 μm, 4.7 μm, and 5.0 μm. Cascading the structure recycles the electrons in each emission region to emit several wavelengths simultaneously. At high current densities, the light-emitting diode spectra broadened into a continuous, broadband spectrum that covered the entire mid-infrared band. When cooled to 77 K, radiances of over 1 W/cm2 sr were achieved, demonstrating apparent temperatures above 1000 K over the 3-5 μm band. InAs/GaSb type-II superlattices are capable of emitting from 3 μm to 30 μm, and the device design can be expanded to include longer emission wavelengths.

RGB and white-emitting organic lasers on flexible glass.

PubMed

Foucher, C; Guilhabert, B; Kanibolotsky, A L; Skabara, P J; Laurand, N; Dawson, M D

2016-02-08

Two formats of multiwavelength red, green and blue (RGB) laser on mechanically-flexible glass are demonstrated. In both cases, three all-organic, vertically-emitting distributed feedback (DFB) lasers are assembled onto a common ultra-thin glass membrane substrate and fully encapsulated by a thin polymer overlayer and an additional 50 µm-thick glass membrane in order to improve the performance. The first device format has the three DFB lasers sitting next to each other on the glass substrate. The DFB lasers are simultaneously excited by a single overlapping optical pump, emitting spatially separated red, green and blue laser output with individual thresholds of, respectively, 28 µJ/cm(2), 11 µJ/cm(2) and 32 µJ/cm(2) (for 5 ns pump pulses). The second device format has the three DFB lasers, respectively the red, green and blue laser, vertically stacked onto the flexible glass. This device format emits a white laser output for an optical pump fluence above 42 µJ/cm(2).

Effect of a broad recombination zone with a triple-emitting layer on the efficiency of blue phosphorescent organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Lee, Seok Jae; Koo, Ja Ryong; Lee, Ho Won; Lee, Song Eun; Yang, Hyung Jin; Yoon, Seung Soo; Park, Jaehoon; Kim, Young Kwan

2014-11-01

The device characteristics of blue phosphorescent organic lightemitting diodes (PHOLEDs) with a broad recombination region within emitting layers (EMLs) were investigated by changing the combination and the composition of the host materials. Six types of devices were fabricated with the novel host material 9-(4-(triphenylsilyl)phenyl)-9H-carbazole, hole transport-type host material N,N'-dicarbazolyl-3,5-benzene, and electron transporttype host material 2,2',2″-(1,3,5-benzenetriyl)tris-[1-phenyl-1H-benzimidazole] as diverse EML structures. Balanced chargecarrier injection and a distributed recombination zone within EMLs were achieved through a triple-emitting layer (T-EML). The properties of a device with a T-EML using a stepwise structure without any mixed host system were found to be superior to the other PHOLEDs. This can be explained in terms of improved charge balance and triplet-exciton confinement within the broad recombination region. [Figure not available: see fulltext.

Highly efficient inverted organic light emitting diodes by inserting a zinc oxide/polyethyleneimine (ZnO:PEI) nano-composite interfacial layer

NASA Astrophysics Data System (ADS)

Kaçar, Rifat; Pıravadılı Mucur, Selin; Yıldız, Fikret; Dabak, Salih; Tekin, Emine

2017-06-01

The electrode/organic interface is one of the key factors in attaining superior device performance in organic electronics, and inserting a tailor-made layer can dramatically modify its properties. The use of nano-composite (NC) materials leads to many advantages by combining materials with the objective of obtaining a desirable combination of properties. In this context, zinc oxide/polyethyleneimine (ZnO:PEI) NC film was incorporated as an interfacial layer into inverted bottom-emission organic light emitting diodes (IBOLEDs) and fully optimized. For orange-red emissive MEH-PPV based IBOLEDs, a high power efficiency of 6.1 lm W-1 at a luminance of 1000 cd m-2 has been achieved. Notably, the external quantum efficiency (EQE) increased from 0.1 to 4.8% and the current efficiency (CE) increased from 0.2 to 8.7 cd A-1 with rise in luminance (L) from 1000 to above 10 000 cd m-2 levels when compared to that of pristine ZnO-based devices. An identical device architecture containing a ZnO:PEI NC layer has also been used to successfully fabricate green and blue emissive IBOLEDs. The significant enhancement in the inverted device performance, in terms of luminance and efficiency, is attributed to a good energy-level alignment between the cathode/organic interface which leads to effective carrier balance, resulting in efficient radiative-recombination.

Printing method for organic light emitting device lighting

NASA Astrophysics Data System (ADS)

Ki, Hyun Chul; Kim, Seon Hoon; Kim, Doo-Gun; Kim, Tae-Un; Kim, Snag-Gi; Hong, Kyung-Jin; So, Soon-Yeol

2013-03-01

Organic Light Emitting Device (OLED) has a characteristic to change the electric energy into the light when the electric field is applied to the organic material. OLED is currently employed as a light source for the lighting tools because research has extensively progressed in the improvement of luminance, efficiency, and life time. OLED is widely used in the plate display device because of a simple manufacture process and high emitting efficiency. But most of OLED lighting projects were used the vacuum evaporator (thermal evaporator) with low molecular. Although printing method has lower efficiency and life time of OLED than vacuum evaporator method, projects of printing OLED actively are progressed because was possible to combine with flexible substrate and printing technology. Printing technology is ink-jet, screen printing and slot coating. This printing method allows for low cost and mass production techniques and large substrates. In this research, we have proposed inkjet printing for organic light-emitting devices has the dominant method of thick film deposition because of its low cost and simple processing. In this research, the fabrication of the passive matrix OLED is achieved by inkjet printing, using a polymer phosphorescent ink. We are measured optical and electrical characteristics of OLED.

The insertion device magnetic measurement facility: Prototype and operational procedures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Burkel, L.; Dejus, R.; Maines, J.

1993-03-01

This report is a description of the current status of the magnetic measurement facility and is a basic instructional manual for the operation of the facility and its components. Please refer to the appendices for more detailed information about specific components and procedures. The purpose of the magnetic measurement facility is to take accurate measurements of the magnetic field in the gay of the IDs in order to determine the effect of the ID on the stored particle beam and the emitted radiation. The facility will also play an important role when evaluating new ideas, novel devices, and inhouse prototypesmore » as part of the ongoing research and development program at the APS. The measurements will be performed with both moving search coils and moving Hall probes. The IDs will be evaluated by computer modeling of the emitted radiation for any given (measured) magnetic field map. The quality of the magnetic field will be described in terms of integrated multipoles for the effect on Storage Ring performance and in terms of the derived trajectories for the emitted radiation. Before being installed on the Storage Ring, every device will be measured and characterized to assure that it is compatible with Storage Ring requirements and radiation specifications. The accuracy that the APS needs to achieve for magnetic measurements will be based on these specifications.« less

Electromagnetic interference caused by common surgical energy-based devices on an implanted cardiac defibrillator.

PubMed

Paniccia, Alessandro; Rozner, Marc; Jones, Edward L; Townsend, Nicole T; Varosy, Paul D; Dunning, James E; Girard, Guillaume; Weyer, Christopher; Stiegmann, Gregory V; Robinson, Thomas N

2014-12-01

Surgical energy-based devices emit energy, which can interfere with other electronic devices (eg, implanted cardiac pacemakers and/or defibrillators). The purpose of this study was to quantify the amount of unintentional energy (electromagnetic interference [EMI]) transferred to an implanted cardiac defibrillator by common surgical energy-based devices. A transvenous cardiac defibrillator was implanted in an anesthetized pig. The primary outcome measure was the average maximum EMI occurring on the implanted cardiac device during activations of multiple different surgical energy-based devices. The EMI transferred to the implanted cardiac device is as follows: traditional bipolar 30 W .01 ± .004 mV, advanced bipolar .004 ± .003 mV, ultrasonic shears .01 ± .004 mV, monopolar Bovie 30 W coagulation .50 ± .20 mV, monopolar Bovie 30 W blend .92 ± .63 mV, monopolar instrument without dispersive electrode .21 ± .07 mV, plasma energy 3.48 ± .78 mV, and argon beam coagulator 2.58 ± .34 mV. Surgeons can minimize EMI on implanted cardiac defibrillators by preferentially utilizing bipolar and ultrasonic devices. Copyright © 2014 Elsevier Inc. All rights reserved.

ZnSe based semiconductor core-shell structures: From preparation to application

NASA Astrophysics Data System (ADS)

Sun, Chengcheng; Gu, Yarong; Wen, Weijia; Zhao, Lijuan

2018-07-01

Inorganic core-shell semiconductor materials have attracted increasing interest in recent years because of the unique structure, stable chemical properties and high performance in devices. With special properties such as a direct band-gap and excellent photoelectrical characteristics, ZnSe based semiconductor core-shell structures are promising materials for applications in such fields as photocatalysts, light-emitting diodes, solar cells, photodetectors, biomedical science and so on. However, few reviews on ZnSe based semiconductor core-shell structures have been reported so far. Therefore this manuscript mainly focuses on the research activities on ZnSe based semiconductor core-shell composites including various preparation methods and the applications of these core-shell structures, especially in photocatalysts, light emitting, solar cells and photodetectors. The possibilities and limitations of studies on ZnSe based semiconductor core-shell composites are also highlighted.

Comparison of corneal power, astigmatism, and wavefront aberration measurements obtained by a point-source color light-emitting diode-based topographer, a Placido-disk topographer, and a combined Placido and dual Scheimpflug device.

PubMed

Ventura, Bruna V; Wang, Li; Ali, Shazia F; Koch, Douglas D; Weikert, Mitchell P

2015-08-01

To evaluate and compare the performance of a point-source color light-emitting diode (LED)-based topographer (color-LED) in measuring anterior corneal power and aberrations with that of a Placido-disk topographer and a combined Placido and dual Scheimpflug device. Cullen Eye Institute, Baylor College of Medicine, Houston, Texas USA. Retrospective observational case series. Normal eyes and post-refractive-surgery eyes were consecutively measured using color-LED, Placido, and dual-Scheimpflug devices. The main outcome measures were anterior corneal power, astigmatism, and higher-order aberrations (HOAs) (6.0 mm pupil), which were compared using the t test. There were no statistically significant differences in corneal power measurements in normal and post-refractive surgery eyes and in astigmatism magnitude in post-refractive surgery eyes between the color-LED device and Placido or dual Scheimpflug devices (all P > .05). In normal eyes, there were no statistically significant differences in 3rd-order coma and 4th-order spherical aberration between the color-LED and Placido devices and in HOA root mean square, 3rd-order coma, 3rd-order trefoil, 4th-order spherical aberration, and 4th-order secondary astigmatism between the color-LED and dual Scheimpflug devices (all P > .05). In post-refractive surgery eyes, the color-LED device agreed with the Placido and dual-Scheimpflug devices regarding 3rd-order coma and 4th-order spherical aberration (all P > .05). In normal and post-refractive surgery eyes, all 3 devices were comparable with respect to corneal power. The agreement in corneal aberrations varied. Drs. Wang, Koch, and Weikert are consultants to Ziemer Ophthalmic Systems AG. Dr. Koch is a consultant to Abbott Medical Optics, Inc., Alcon Surgical, Inc., and i-Optics Corp. Copyright © 2015 ASCRS and ESCRS. Published by Elsevier Inc. All rights reserved.

Electroluminescence of fluorescent-phosphorescent organic light-emitting diodes with regular, inverted, and symmetrical structures

NASA Astrophysics Data System (ADS)

Yang, Su-Hua; Shih, Po-Jen; Wu, Wen-Jie

2014-11-01

The influence of the device structure on the electroluminescence (EL) properties of fluorescent-phosphorescent organic light emitting diodes (OLEDs) was demonstrated. Four devices with regular-, inverted-, compensated- and symmetrical-emission layers (EMLs) were prepared. In regular-EML device, DCJTB emission increased when the phosphorescent sensitized EML was thickened. In inverted-EML device, low electron energy barrier at the Bphen/BCzVB interface resulted in weakened blue emission. The compensated-EML device, prepared with a red color-compensated layer, showed a color-tunable broadband white emission. Conversely, device with a quantum-like symmetrical-EML showed a narrow color-temperature range. Stable EL efficiency was obtained from regular, compensated, and symmetrical-EML devices. In contrast, EL efficiency of inverted-EML device rolled off significantly, though it had the highest EL efficiency of 11.4 cd/A.

Diboron compound-based organic light-emitting diodes with high efficiency and reduced efficiency roll-off

NASA Astrophysics Data System (ADS)

Wu, Tien-Lin; Huang, Min-Jie; Lin, Chih-Chun; Huang, Pei-Yun; Chou, Tsu-Yu; Chen-Cheng, Ren-Wu; Lin, Hao-Wu; Liu, Rai-Shung; Cheng, Chien-Hong

2018-04-01

Organic light-emitting diodes (OLEDs) based on thermally activated delayed fluorescence (TADF) materials are promising for the realization of highly efficient light emitters. However, such devices have so far suffered from efficiency roll-off at high luminance. Here, we report the design and synthesis of two diboron-based molecules, CzDBA and tBuCzDBA, which show excellent TADF properties and yield efficient OLEDs with very low efficiency roll-off. These donor-acceptor-donor (D-A-D) type and rod-like compounds concurrently generate TADF with a photoluminescence quantum yield of 100% and an 84% horizontal dipole ratio in the thin film. A green OLED based on CzDBA exhibits a high external quantum efficiency of 37.8 ± 0.6%, a current efficiency of 139.6 ± 2.8 cd A-1 and a power efficiency of 121.6 ± 3.1 lm W-1 with an efficiency roll-off of only 0.3% at 1,000 cd m-2. The device has a peak emission wavelength of 528 nm and colour coordinates of the Commission International de ĺEclairage (CIE) of (0.31, 0.61), making it attractive for colour-display applications.

Carbazole/triarylamine based polymers as a hole injection/transport layer in organic light emitting devices.

PubMed

Wang, Hui; Ryu, Jeong-Tak; Kwon, Younghwan

2012-05-01

This study examined the influence of the charge injection barriers on the performance of organic light emitting diodes (OLEDs) using polymers with a stepwise tuned ionization potential (I(p) approximately -5.01 - -5.29 eV) between the indium tin oxide (ITO) (phi approximately -4.8 eV) anode and tris(8-hydroxyquinolinato) aluminium (Alq3) (I(p) approximately -5.7 eV) layer. The energy levels of the polymers were tuned by structural modification. Double layer devices were fabricated with a configuration of ITO/polymer/Alq3/LiF/Al, where the polymers, Alq3, and LiF/Al were used as the hole injection/transport layer, emissive electron transport layer, and electron injection/cathode, respectively. Using the current density-voltage (J-V), luminescence-voltage (L-V) and efficiencies in these double layer devices, the device performance was evaluated in terms of the energy level alignments at the interfaces, such as the hole injection barriers (phi(h)(iTO/polymer) and phi(h)(polymer/Alq3)) from ITO through the polymers into the Alq3 layer, and the electron injection barrier (phi(e)(polymer/Alq3) or electron/exciton blocking barrier) at the polymer/Alq3 interface.

Enhancement of light output power of GaN-based light-emitting diodes with photonic quasi-crystal patterned on p-GaN surface and n-side sidewall roughing

PubMed Central

2013-01-01

In this paper, GaN-based light-emitting diodes (LEDs) with photonic quasi-crystal (PQC) structure on p-GaN surface and n-side roughing by nano-imprint lithography are fabricated and investigated. At an injection current of 20 mA, the LED with PQC structure on p-GaN surface and n-side roughing increased the light output power of the InGaN/GaN multiple quantum well LEDs by a factor of 1.42, and the wall-plug efficiency is 26% higher than the conventional GaN-based LED type. After 500-h life test (55°C/50 mA), it was found that the normalized output power of GaN-based LED with PQC structure on p-GaN surface and n-side roughing only decreased by 6%. These results offer promising potential to enhance the light output powers of commercial light-emitting devices using the technique of nano-imprint lithography. PMID:23683526

Efficient Molecular Organic Light-Emitting Diodes Based on Silole Derivatives

DTIC Science & Technology

2003-01-01

TPD) and tris-(8-hydroxyquinoline) aluminum ( Alq3 ), commonly used in MOLEDs, have hole and electron mobilities that differ by a factor of ~1000 (~10...and subsequent device degradation. In addition to the widely used electron transporter Alq3 , [8] derivatives of nathrolines, [7] oxadiazoles, [9

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xin, Yunzi; Nishio, Kazuyuki; Saitow, Ken-ichi, E-mail: saitow@hiroshima-u.ac.jp

A silicon (Si) quantum dot (QD)-based hybrid inorganic/organic light-emitting diode (LED) was fabricated via solution processing. This device exhibited white-blue electroluminescence at a low applied voltage of 6 V, with 78% of the effective emission obtained from the Si QDs. This hybrid LED produced current and optical power densities 280 and 350 times greater than those previously reported for such device. The superior performance of this hybrid device was obtained by both the prepared Si QDs and the optimized layer structure and thereby improving carrier migration through the hybrid LED and carrier recombination in the homogeneous Si QD layer.

VCSELs for exascale computing, computer farms, and green photonics

NASA Astrophysics Data System (ADS)

Hofmann, Werner; Moser, Philip; Wolf, Philip; Larisch, Gunter; Li, Hui; Li, Wei; Lott, James; Bimberg, Dieter

2012-11-01

The bandwidth-induced communication bottleneck due to the intrinsic limitations of metal interconnects is inhibiting the performance and environmental friendliness of todaýs supercomputers, data centers, and in fact all other modern electrically interconnected and interoperable networks such as data farms and "cloud" fabrics. The same is true for systems of optical interconnects (OIs), where even when the metal interconnects are replaced with OIs the systems remain limited by bandwidth, physical size, and most critically the power consumption and lifecycle operating costs. Vertical-cavity surface-emitting lasers (VCSELs) are ideally suited to solve this dilemma. Global communication providers like Google Inc., Intel Inc., HP Inc., and IBM Inc. are now producing optical interconnects based on VCSELs. The optimal bandwidth per link may be analyzed by by using Amdahĺs Law and depends on the architecture of the data center and the performance of the servers within the data center. According to Google Inc., a bandwidth of 40 Gb/s has to be accommodated in the future. IBM Inc. demands 80 Tbps interconnects between solitary server chips in 2020. We recently realized ultrahigh bit rate VCSELs up to 49 Gb/s suited for such optical interconnects emitting at 980 nm. These devices show error-free transmission at temperatures up to 155°C and operate beyond 200°C. Single channel data-rates of 40 Gb/s were achieved up to 75°C. Record high energy efficiencies close to 50 fJ/bit were demonstrated for VCSELs emitting at 850 nm. Our devices are fabricated using a full three-inch wafer process, and the apertures were formed by in-situ controlled selective wet oxidation using stainless steel-based vacuum equipment of our own design. assembly, and operation. All device data are measured, recorded, and evaluated by our proprietary fully automated wafer mapping probe station. The bandwidth density of our present devices is expected to be scalable from about 100 Gbps/mm² to a physical limit of roughly 15 Tbps/mm² based on the current 12.5 Gb/s VCSEL technology. Still more energy-efficient and smaller volume laser diode devices dissipating less heat are mandatory for further up scaling of the bandwidth. Novel metal-clad VCSELs enable a reduction of the device's footprint for potentially ultrashort range interconnects by 1 to 2 orders of magnitude compared to conventional VCSELs thus enabling a similar increase of device density and bandwidth.

Recent developments of truly stretchable thin film electronic and optoelectronic devices.

PubMed

Zhao, Juan; Chi, Zhihe; Yang, Zhan; Chen, Xiaojie; Arnold, Michael S; Zhang, Yi; Xu, Jiarui; Chi, Zhenguo; Aldred, Matthew P

2018-03-29

Truly stretchable electronics, wherein all components themselves permit elastic deformation as the whole devices are stretched, exhibit unique advantages over other strategies, such as simple fabrication process, high integrity of entire components and intimate integration with curvilinear surfaces. In contrast to the stretchable devices using stretchable interconnectors to integrate with rigid active devices, truly stretchable devices are realized with or without intentionally employing structural engineering (e.g. buckling), and the whole device can be bent, twisted, or stretched to meet the demands for practical applications, which are beyond the capability of conventional flexible devices that can only bend or twist. Recently, great achievements have been made toward truly stretchable electronics. Here, the contribution of this review is an effort to provide a panoramic view of the latest progress concerning truly stretchable electronic devices, of which we give special emphasis to three kinds of thin film electronic and optoelectronic devices: (1) thin film transistors, (2) electroluminescent devices (including organic light-emitting diodes, light-emitting electrochemical cells and perovskite light-emitting diodes), and (3) photovoltaics (including organic photovoltaics and perovskite solar cells). We systematically discuss the device design and fabrication strategies, the origin of device stretchability and the relationship between the electrical and mechanical behaviors of the devices. We hope that this review provides a clear outlook of these attractive stretchable devices for a broad range of scientists and attracts more researchers to devote their time to this interesting research field in both industry and academia, thus encouraging more intelligent lifestyles for human beings in the coming future.

Design for high-power, single-lobe, grating-surface-emitting quantum cascade lasers enabled by plasmon-enhanced absorption of antisymmetric modes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sigler, C.; Kirch, J. D.; Mawst, L. J.

2014-03-31

Resonant coupling of the transverse-magnetic polarized (guided) optical mode of a quantum-cascade laser (QCL) to the antisymmetric surface-plasmon modes of 2nd-order distributed-feedback (DFB) metal/semiconductor gratings results in strong antisymmetric-mode absorption. In turn, lasing in the symmetric mode, that is, surface emission in a single-lobe far-field beam pattern, is strongly favored over controllable ranges in grating duty cycle and tooth height. By using core-region characteristics of a published 4.6 μm-emitting QCL, grating-coupled surface-emitting (SE) QCLs are analyzed and optimized for highly efficient single-lobe operation. For infinite-length devices, it is found that when the antisymmetric mode is resonantly absorbed, the symmetric mode hasmore » negligible absorption loss (∼0.1 cm{sup −1}) while still being efficiently outcoupled, through the substrate, by the DFB grating. For finite-length devices, 2nd-order distributed Bragg reflector (DBR) gratings are used on both sides of the DFB grating to prevent uncontrolled reflections from cleaved facets. Equations for the threshold-current density and the differential quantum efficiency of SE DFB/DBR QCLs are derived. For 7 mm-long, 8.0 μm-wide, 4.6 μm-emitting devices, with an Ag/InP grating of ∼39% duty cycle, and ∼0.22 μm tooth height, threshold currents as low as 0.45 A are projected. Based on experimentally obtained internal efficiency values from high-performance QCLs, slope efficiencies as high as 3.4 W/A are projected; thus, offering a solution for watt-range, single-lobe CW operation from SE, mid-infrared QCLs.« less

Hybrid light emitting transistors (Presentation Recording)

NASA Astrophysics Data System (ADS)

Muhieddine, Khalid; Ullah, Mujeeb; Namdas, Ebinazar B.; Burn, Paul L.

2015-10-01

Organic light-emitting diodes (OLEDs) are well studied and established in current display applications. Light-emitting transistors (LETs) have been developed to further simplify the necessary circuitry for these applications, combining the switching capabilities of a transistor with the light emitting capabilities of an OLED. Such devices have been studied using mono- and bilayer geometries and a variety of polymers [1], small organic molecules [2] and single crystals [3] within the active layers. Current devices can often suffer from low carrier mobilities and most operate in p-type mode due to a lack of suitable n-type organic charge carrier materials. Hybrid light-emitting transistors (HLETs) are a logical step to improve device performance by harnessing the charge carrier capabilities of inorganic semiconductors [4]. We present state of the art, all solution processed hybrid light-emitting transistors using a non-planar contact geometry [1, 5]. We will discuss HLETs comprised of an inorganic electron transport layer prepared from a sol-gel of zinc tin oxide and several organic emissive materials. The mobility of the devices is found between 1-5 cm2/Vs and they had on/off ratios of ~105. Combined with optical brightness and efficiencies of the order of 103 cd/m2 and 10-3-10-1 %, respectively, these devices are moving towards the performance required for application in displays. [1] M. Ullah, K. Tandy, S. D. Yambem, M. Aljada, P. L. Burn, P. Meredith, E. B. Namdas., Adv. Mater. 2013, 25, 53, 6213 [2] R. Capelli, S. Toffanin, G. Generali, H. Usta, A. Facchetti, M. Muccini, Nature Materials 2010, 9, 496 [3] T. Takenobu, S. Z. Bisri, T. Takahashi, M. Yahiro, C. Adachi, Y. Iwasa, Phys. Rev. Lett. 2008, 100, 066601 [4] H. Nakanotani, M. Yahiro, C. Adachi, K. Yano, Appl. Phys. Lett. 2007, 90, 262104 [5] K. Muhieddine, M. Ullah, B. N. Pal, P. Burn E. B. Namdas, Adv. Mater. 2014, 26,37, 6410

Thin-Film Photoluminescent Properties and the Atomistic Model of Mg2TiO4 as a Non-rare Earth Matrix Material for Red-Emitting Phosphor

NASA Astrophysics Data System (ADS)

Huang, Chieh-Szu; Chang, Ming-Chuan; Huang, Cheng-Liang; Lin, Shih-kang

2016-12-01

Thin-film electroluminescent devices are promising solid-state lighting devices. Red light-emitting phosphor is the key component to be integrated with the well-established blue light-emitting diode chips for stimulating natural sunlight. However, environmentally hazardous rare-earth (RE) dopants, e.g. Eu2+ and Ce2+, are commonly used for red-emitting phosphors. Mg2TiO4 inverse spinel has been reported as a promising matrix material for "RE-free" red light luminescent material. In this paper, Mg2TiO4 inverse spinel is investigated using both experimental and theoretical approaches. The Mg2TiO4 thin films were deposited on Si (100) substrates using either spin-coating with the sol-gel process, or radio frequency sputtering, and annealed at various temperatures ranging from 600°C to 900°C. The crystallinity, microstructures, and photoluminescent properties of the Mg2TiO4 thin films were characterized. In addition, the atomistic model of the Mg2TiO4 inverse spinel was constructed, and the electronic band structure of Mg2TiO4 was calculated based on density functional theory. Essential physical and optoelectronic properties of the Mg2TiO4 luminance material as well as its optimal thin-film processing conditions were comprehensively reported.

Light emitting diodes as a plant lighting source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bula, R.J.; Tennessen, D.J.; Morrow, R.C.

1994-12-31

Electroluminescence in solid materials is defined as the generation of light by the passage of an electric current through a body of solid material under an applied electric field. A specific type of electroluminescence, first noted by Lossew in 1923, involves the generation of photons when electrons are passed through a p-n junction of certain solid materials (junction of a n-type semiconductor, an electron donor, and a p-type semiconductor, an electron acceptor). Development efforts to translate these observations into visible light emitting devices, however, was not undertaken until the 1950s. The term, light emitting diode (LEDs), was first used inmore » a report by Wolfe, et al., in 1955. The development of this light emitting semiconductor technology dates back less than 30 years. During this period of time, the LED has evolved from a rare and expensive light generating device to one of the most widely used electronic components. The most popular applications of the LED are as indicators or as optoelectronic switches. However, several recent advances in LED technology have made possible the utilization of LEDs for applications that require a high photon flux, such as for plant lighting in controlled environments. The new generation of LEDs based on a gallium aluminum arsenide (GaAlAS) semiconductor material fabricated as a double heterostructure on a transparent substrate has opened up many new applications for these LEDs.« less

Alternative approaches of SiC & related wide bandgap materials in light emitting & solar cell applications

NASA Astrophysics Data System (ADS)

Wellmann, Peter; Syväjärvi, Mikael; Ou, Haiyan

2014-03-01

Materials for optoelectronics give a fascinating variety of issues to consider. Increasingly important are white light emitting diode (LED) and solar cell materials. Profound energy savings can be done by addressing new materials. White light emitting diodes are becoming common in our lighting scene. There is a great energy saving in the transition from the light bulb to white light emitting diodes via a transition of fluorescent light tubes. However, the white LEDs still suffer from a variety of challenges in order to be in our daily use. Therefore there is a great interest in alternative lighting solutions that could be part of our daily life. All materials create challenges in fabrication. Defects reduce the efficiency of optical transitions involved in the light emitting diode materials. The donor-acceptor co-doped SiC is a potential light converter for a novel monolithic all-semiconductor white LED. In spite of considerable research, the internal quantum efficiency is far less than theoretically predicted and is likely a fascinating scientific field for studying materials growth, defects and optical transitions. Still, efficient Si-based light source represents an ongoing research field in photonics that requires high efficiency at room temperature, wavelength tuning in a wide wavelength range, and easy integration in silicon photonic devices. In some of these devices, rare earth doped materials is considered as a potential way to provide luminescence spanning in a wide wavelength range. Divalent and trivalent oxidation states of Eu provide emitting centers in the visible region. In consideration, the use of Eu in photonics requires Eu doped thin films that are compatible with CMOS technology but for example faces material science issues like a low Eu solid solubility in silica. Therefore approaches aim to obtain efficient light emission from silicon oxycarbide which has a luminescence in the visible range and can be a host material for rare earth ions. The silicon oxycarbide material can provide potential applications of the Eu luminescent materials to challenging conditions like high temperatures or aggressive environments where the silica has weaknesses. In some approaches, silicon rich silicon oxide that contain silicon nanoclusters emit red to near infrared luminescence due to quantum confinement effects while luminescence at shorter wavelength is difficult due to the interplay of defects and quantum confinement effects. In addition it is applicable as low-k dielectric, etch-stop and passivation layers. It also has an optical band-gap that is smaller than that of SiO2 which may facilitate carrier injection at lower voltages that is suitable for optoelectronics. From materials perspective of emerging materials, it seems distant to consider system related issues. The future demands on communication and lighting devices require higher information flows in modernized optical devices, for example by replacing electrical interconnects with their optical counterparts and tunable backgrounds filters for integrated optics or photonics applications. However, there are materials issues related to such device performance, for example by a non-linearity, that provide the possibility for selective removal or addition of wavelengths using hetero structures in which one side of the structure enhances the light-to-dark sensitivity of long and medium wavelength channels and diminish others, and an opposite behavior in other face of the structure. Certainly materials may be applied in various innovative ways to provide new performances in devices and systems. In any materials and device evaluation, reliability issues in passivation and packaging of semiconductor device structures provide a base knowledge that may be used to evaluate new concepts. Fundamental aspects of dielectric constant, bandgap and band offsets between the valence and conduction band edges between the passivation layer and the semiconductor create a foundation for understanding the device performance. In relation to these, the surface pre-treatment and deposition technique can influence the reliability and electric field durability of the system, and relate to interface and near interface regions between the dielectric and semiconductor which can host electronic defects which change the surface potential, reduces mobility and enhance the recombination of charge carriers. At the end, materials for energy savings are critically needed. At the symposium ''Alternative approaches of SiC and related wide bandgap materials in light emitting and solar cell applications'', held at the E-MRS 2013 Spring meeting, 27-31 May, 2013 Strasbourg, France, a variety of concepts were presented. In this publication, a selection is presented that represents a range of issues from materials to reliability processing to system approaches. Acknowledgements: Technical support during preparation of the symposium program and proceedings by Saskia Schimmel is greatly acknowledged.

General method to evaluate substrate surface modification techniques for light extraction enhancement of organic light emitting diodes

NASA Astrophysics Data System (ADS)

Krummacher, B. C.; Mathai, M. K.; Choong, V.; Choulis, S. A.; So, F.; Winnacker, A.

2006-09-01

The external light output of organic light emitting diodes (OLEDs) can be increased by modifying the light emitting surface. The apparent light extraction enhancement is given by the ratio between the efficiency of the unmodified device and the efficiency of the modified device. This apparent light extraction enhancement is dependent on the OLED architecture itself and is not the correct value to judge the effectiveness of a technique to enhance light outcoupling due to substrate surface modification. We propose a general method to evaluate substrate surface modification techniques for light extraction enhancement of OLEDs independent from the device architecture. This method is experimentally demonstrated using green electrophosphorescent OLEDs with different device architectures. The substrate surface of these OLEDs was modified by applying a prismatic film to increase light outcoupling from the device stack. It was demonstrated that the conventionally measured apparent light extraction enhancement by means of the prismatic film does not reflect the actual performance of the light outcoupling technique. Rather, by comparing the light extracted out of the prismatic film to that generated in the OLED layers and coupled into the substrate (before the substrate/air interface), a more accurate evaluation of light outcoupling enhancement can be achieved. Furthermore we show that substrate surface modification can change the output spectrum of a broad band emitting OLED.

Optimization of hybrid blue organic light-emitting diodes based on singlet and triplet exciton diffusion length

NASA Astrophysics Data System (ADS)

Lee, Song Eun; Lee, Ho Won; Lee, Jae Woo; Hwang, Kyo Min; Park, Soo Na; Yoon, Seung Soo; Kim, Young Kwan

2015-06-01

The hybrid blue organic light-emitting diodes (HB OLEDs) with triplet harvesting (TH) structures within an emitting layer (EML) are fabricated with fluorescent and phosphorescent EMLs. The TH is to transfer triplet excitons from fluorescence to phosphorescence, where they can decay radiatively. Remarkably, the half-decay lifetime of a hybrid blue device with fluorescent and phosphorescent EML thickness of 5 and 25 nm, measured at an initial luminance of 500 cd/m2, has improved twice than that of using a conventional structure. Additionally, the blue device’s efficiency improved. We attribute this improvement to the efficient triplet excitons energy transfer and the optimized distribution of the EML which depends on singlet and triplet excitons diffusion length that occurs within each the EML.

Lithium salt doped conjugated polymers as electron transporting materials for highly efficient blue polymer light-emitting diodes

NASA Astrophysics Data System (ADS)

Huang, Fei; Shih, Ping-I.; Liu, Michelle S.; Shu, Ching-Fong; Jen, Alex K.-Y.

2008-12-01

Highly efficient blue polymer light-emitting diodes (PLEDs) are fabricated using a conjugated polymer, poly[9,9-bis(2-(2-(2-diethanol-amino-ethoxy) ethoxy) ethyl) fluorene-alt-4, 4'-phenylether] as an electron transporting layer (ETL). It was found that the performance of these blue-emitting devices could be greatly improved if the ETL was doped with LiF or Li2CO3 salts. A bis[(4,6-di-fluorophenyl)-pyridinato-N, C2] (picolinate) Ir(III) (FIrpic) complex based blue phosphorescent PLED exhibited a maximum luminance efficiency of 20.3 cd/A with a luminance of 1600 cd/m2 at the current density of 7.9 mA/cm2 and drive voltage of 8.0 V.

High-speed GaN/GaInN nanowire array light-emitting diode on silicon(111).

PubMed

Koester, Robert; Sager, Daniel; Quitsch, Wolf-Alexander; Pfingsten, Oliver; Poloczek, Artur; Blumenthal, Sarah; Keller, Gregor; Prost, Werner; Bacher, Gerd; Tegude, Franz-Josef

2015-04-08

The high speed on-off performance of GaN-based light-emitting diodes (LEDs) grown in c-plane direction is limited by long carrier lifetimes caused by spontaneous and piezoelectric polarization. This work demonstrates that this limitation can be overcome by m-planar core-shell InGaN/GaN nanowire LEDs grown on Si(111). Time-resolved electroluminescence studies exhibit 90-10% rise- and fall-times of about 220 ps under GHz electrical excitation. The data underline the potential of these devices for optical data communication in polymer fibers and free space.

Fabrication and Measurement of Electroluminescence and Electrical Properties of Organic Light-Emitting Diodes Containing Mott Insulator Nanocrystals.

PubMed

Nozoe, Soichiro; Kinoshita, Nobuaki; Matsuda, Masaki

2016-04-01

By using the short-time electrocrystallization technique, phthalocyanine (Pc)-based Mott insulator Co(Pc)(CN)2 . 2CHCl3 nanocrystals were fabricated and applied to organic light-emiting diodes (OLEDs). The fabricated device having the configuration ITO/Co(Pc)(CN)2 . 2CHCl3/Alq3/Al, in which ITO is indium-tin oxide and Alq3 is tris(8-hydroxyquinolinato)aluminum, showed clear emission from Alq3, suggesting the Mott insulator Co(Pc)(CN)2 . 2CHCl3 can work as useful hole-injection and transport material in OLEDs.

The circular polarization inversion in δ〈Mn〉/InGaAs/GaAs light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dorokhin, M. V., E-mail: dorokhin@nifti.unn.ru; Danilov, Yu. A.; Zvonkov, B. N.

We investigated light-emitting diodes consisting of an InGaAs/GaAs quantum well adjacent to a ferromagnetic δ〈Mn〉-layer. The magnetic field-dependent circular polarization obtained from both photo- and electroluminescence shows an unusual sign inversion depending on the growth parameters that can be explained by an interplay of the Zeeman splitting and Mn-hole interaction effects. Our results can help to understand the origin and control of the spin polarization on Mn doped GaAs structures, a fundamental step for the development of Mn-based spintronic devices.

Highly conductive transparent organic electrodes with multilayer structures for rigid and flexible optoelectronics.

PubMed

Guo, Xiaoyang; Liu, Xingyuan; Lin, Fengyuan; Li, Hailing; Fan, Yi; Zhang, Nan

2015-05-27

Transparent electrodes are essential components for optoelectronic devices, such as touch panels, organic light-emitting diodes, and solar cells. Indium tin oxide (ITO) is widely used as transparent electrode in optoelectronic devices. ITO has high transparency and low resistance but contains expensive rare elements, and ITO-based devices have poor mechanical flexibility. Therefore, alternative transparent electrodes with excellent opto-electrical performance and mechanical flexibility will be greatly demanded. Here, organics are introduced into dielectric-metal-dielectric structures to construct the transparent electrodes on rigid and flexible substrates. We show that organic-metal-organic (OMO) electrodes have excellent opto-electrical properties (sheet resistance of below 10 Ω sq(-1) at 85% transmission), mechanical flexibility, thermal and environmental stabilities. The OMO-based polymer photovoltaic cells show performance comparable to that of devices based on ITO electrodes. This OMO multilayer structure can therefore be used to produce transparent electrodes suitable for use in a wide range of optoelectronic devices.

Flexible Light Emission Diode Arrays Made of Transferred Si Microwires-ZnO Nanofilm with Piezo-Phototronic Effect Enhanced Lighting.

PubMed

Li, Xiaoyi; Liang, Renrong; Tao, Juan; Peng, Zhengchun; Xu, Qiming; Han, Xun; Wang, Xiandi; Wang, Chunfeng; Zhu, Jing; Pan, Caofeng; Wang, Zhong Lin

2017-04-25

Due to the fragility and the poor optoelectronic performances of Si, it is challenging and exciting to fabricate the Si-based flexible light-emitting diode (LED) array devices. Here, a flexible LED array device made of Si microwires-ZnO nanofilm, with the advantages of flexibility, stability, lightweight, and energy savings, is fabricated and can be used as a strain sensor to demonstrate the two-dimensional pressure distribution. Based on piezo-phototronic effect, the intensity of the flexible LED array can be increased more than 3 times (under 60 MPa compressive strains). Additionally, the device is stable and energy saving. The flexible device can still work well after 1000 bending cycles or 6 months placed in the atmosphere, and the power supplied to the flexible LED array is only 8% of the power of the surface-contact LED. The promising Si-based flexible device has wide range application and may revolutionize the technologies of flexible screens, touchpad technology, and smart skin.

Vertical pillar-superlattice array and graphene hybrid light emitting diodes.

PubMed

Lee, Jung Min; Choung, Jae Woong; Yi, Jaeseok; Lee, Dong Hyun; Samal, Monica; Yi, Dong Kee; Lee, Chul-Ho; Yi, Gyu-Chul; Paik, Ungyu; Rogers, John A; Park, Won Il

2010-08-11

We report a type of device that combines vertical arrays of one-dimensional (1D) pillar-superlattice (PSL) structures with 2D graphene sheets to yield a class of light emitting diode (LED) with interesting mechanical, optical, and electrical characteristics. In this application, graphene sheets coated with very thin metal layers exhibit good mechanical and electrical properties and an ability to mount, in a freely suspended configuration, on the PSL arrays as a top window electrode. Optical characterization demonstrates that graphene exhibits excellent optical transparency even after deposition of the thin metal films. Thermal annealing of the graphene/metal (Gr/M) contact to the GaAs decreases the contact resistance, to provide enhanced carrier injection. The resulting PSL-Gr/M LEDs exhibit bright light emission over large areas. The result suggests the utility of graphene-based materials as electrodes in devices with unusual, nonplanar 3D architectures.

Surface morphology and interdiffusion of LiF in Alq3-based organic light-emitting devices.

PubMed

Lee, Young Joo; Li, Xiaolong; Kang, Da-Yeon; Park, Seong-Sik; Kim, Jinwoo; Choi, Jeong-Woo; Kim, Hyunjung

2008-09-01

Highly efficient organic light-emitting devices (OLEDs) have been realized by insertion of a thin insulating lithium fluoride (LiF) layer between aluminum (Al) cathode and an electron transport layer, tris-(8-hydroxyquinoline) aluminum (Alq(3)). In this paper, we study the surface morphology of LiF on Alq(3) by synchrotron X-ray scattering and atomic force microscopy (AFM) as a function of thickness of LiF. We also study the interdiffusion of LiF into Al cathode as well as into Alq(3) layer as a function of temperature. Initially, LiF molecules are distributed randomly as clusters on the Alq(3) layer and then gradually form a layer as increasing LiF thickness. The interdiffusion of LiF into Al occurs more actively than into Alq(3) in annealing process. LiF on Alq(3) induces the ordering of Al to (111) direction strongly with increasing LiF thickness.

Pure circular polarization electroluminescence at room temperature with spin-polarized light-emitting diodes.

PubMed

Nishizawa, Nozomi; Nishibayashi, Kazuhiro; Munekata, Hiro

2017-02-21

We report the room-temperature electroluminescence (EL) with nearly pure circular polarization (CP) from GaAs-based spin-polarized light-emitting diodes (spin-LEDs). External magnetic fields are not used during device operation. There are two small schemes in the tested spin-LEDs: first, the stripe-laser-like structure that helps intensify the EL light at the cleaved side walls below the spin injector Fe slab, and second, the crystalline AlO x spin-tunnel barrier that ensures electrically stable device operation. The purity of CP is depressively low in the low current density ( J ) region, whereas it increases steeply and reaches close to the pure CP when J > 100 A/cm 2 There, either right- or left-handed CP component is significantly suppressed depending on the direction of magnetization of the spin injector. Spin-dependent reabsorption, spin-induced birefringence, and optical spin-axis conversion are suggested to account for the observed experimental results.

Control of coherent information via on-chip photonic-phononic emitter-receivers.

PubMed

Shin, Heedeuk; Cox, Jonathan A; Jarecki, Robert; Starbuck, Andrew; Wang, Zheng; Rakich, Peter T

2015-03-05

Rapid progress in integrated photonics has fostered numerous chip-scale sensing, computing and signal processing technologies. However, many crucial filtering and signal delay operations are difficult to perform with all-optical devices. Unlike photons propagating at luminal speeds, GHz-acoustic phonons moving at slower velocities allow information to be stored, filtered and delayed over comparatively smaller length-scales with remarkable fidelity. Hence, controllable and efficient coupling between coherent photons and phonons enables new signal processing technologies that greatly enhance the performance and potential impact of integrated photonics. Here we demonstrate a mechanism for coherent information processing based on travelling-wave photon-phonon transduction, which achieves a phonon emit-and-receive process between distinct nanophotonic waveguides. Using this device, physics--which supports GHz frequencies--we create wavelength-insensitive radiofrequency photonic filters with frequency selectivity, narrow-linewidth and high power-handling in silicon. More generally, this emit-receive concept is the impetus for enabling new signal processing schemes.

Photonic crystal light emitting diode based on Er and Si nanoclusters co-doped slot waveguide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lo Savio, R.; Galli, M.; Liscidini, M.

We report on the design, fabrication, and electro-optical characterization of a light emitting device operating at 1.54 μm, whose active layer consists of silicon oxide containing Er-doped Si nanoclusters. A photonic crystal (PhC) is fabricated on the top-electrode to enhance the light extraction in the vertical direction, and thus the external efficiency of the device. This occurs if a photonic mode of the PhC slab is resonant with the Er emission energy, as confirmed by theoretical calculations and experimental analyses. We measure an increase of the extraction efficiency by a factor of 3 with a high directionality of light emission inmore » a narrow vertical cone. External quantum efficiency and power efficiency are among the highest reported for this kind of material. These results are important for the realization of CMOS-compatible efficient light emitters at telecom wavelengths.« less

Method of Manufacturing a Light Emitting, Photovoltaic or Other Electronic Apparatus and System

NASA Technical Reports Server (NTRS)

Blanchard, Richard A. (Inventor); Lewandowski, Mark Allan (Inventor); Frazier, Donald Odell (Inventor); Ray, William Johnstone (Inventor); Fuller, Kirk A. (Inventor); Lowenthal, Mark David (Inventor); Shotton, Neil O. (Inventor)

2014-01-01

The present invention provides a method of manufacturing an electronic apparatus, such as a lighting device having light emitting diodes (LEDs) or a power generating device having photovoltaic diodes. The exemplary method includes depositing a first conductive medium within a plurality of channels of a base to form a plurality of first conductors; depositing within the plurality of channels a plurality of semiconductor substrate particles suspended in a carrier medium; forming an ohmic contact between each semiconductor substrate particle and a first conductor; converting the semiconductor substrate particles into a plurality of semiconductor diodes; depositing a second conductive medium to form a plurality of second conductors coupled to the plurality of semiconductor diodes; and depositing or attaching a plurality of lenses suspended in a first polymer over the plurality of diodes. In various embodiments, the depositing, forming, coupling and converting steps are performed by or through a printing process.

Method of Manufacturing a Light Emitting, Photovoltaic or Other Electronic Apparatus and System

NASA Technical Reports Server (NTRS)

Lowenthal, Mark D. (Inventor); Shotton, Neil O. (Inventor); Lewandowski, Mark Allan (Inventor); Frazier, Donald Odell (Inventor); Ray, William Johnstone (Inventor); Blanchard, Richard A. (Inventor); Fuller, Kirk A. (Inventor)

2013-01-01

The present invention provides a method of manufacturing an electronic apparatus, such as a lighting device having light emitting diodes (LEDs) or a power generating device having photovoltaic diodes. The exemplary method includes forming at least one first conductor coupled to a base; coupling a plurality of substrate particles to the at least one first conductor; converting the plurality of substrate particles into a plurality of diodes; forming at least one second conductor coupled to the plurality of spherical diodes; and depositing or attaching a plurality of substantially spherical lenses suspended in a first polymer, with the lenses and the suspending polymer having different indices of refraction. In some embodiments, the lenses and diodes have a ratio of mean diameters or lengths between about 10:1 and 2:1. In various embodiments, the forming, coupling and converting steps are performed by or through a printing process.

Method of manufacturing a light emitting, photovoltaic or other electronic apparatus and system

NASA Technical Reports Server (NTRS)

Fuller, Kirk A. (Inventor); Frazier, Donald Odell (Inventor); Blanchard, Richard A. (Inventor); Lowenthal, Mark D. (Inventor); Lewandowski, Mark Allan (Inventor); Ray, William Johnstone (Inventor); Shotton, Neil O. (Inventor)

2012-01-01

The present invention provides a method of manufacturing an electronic apparatus, such as a lighting device having light emitting diodes (LEDs) or a power generating device having photovoltaic diodes. The exemplary method includes depositing a first conductive medium within a plurality of channels of a base to form a plurality of first conductors; depositing within the plurality of channels a plurality of semiconductor substrate particles suspended in a carrier medium; forming an ohmic contact between each semiconductor substrate particle and a first conductor; converting the semiconductor substrate particles into a plurality of semiconductor diodes; depositing a second conductive medium to form a plurality of second conductors coupled to the plurality of semiconductor diodes; and depositing or attaching a plurality of lenses suspended in a first polymer over the plurality of diodes. In various embodiments, the depositing, forming, coupling and converting steps are performed by or through a printing process.

Method of Manufacturing a Light Emitting, Photovoltaic or Other Electronic Apparatus and System

NASA Technical Reports Server (NTRS)

Blanchard, Richard A. (Inventor); Fuller, Kirk A. (Inventor); Ray, William Johnstone (Inventor); Shotton, Neil O. (Inventor); Frazier, Donald Odell (Inventor); Lowenthal, Mark D. (Inventor); Lewandowski, Mark Allan (Inventor)

2013-01-01

The present invention provides a method of manufacturing an electronic apparatus, such as a lighting device having light emitting diodes (LEDs) or a power generating device having photovoltaic diodes. The exemplary method includes forming at least one first conductor coupled to a base; coupling a plurality of substantially spherical substrate particles to the at least one first conductor; converting the substrate particles into a plurality of substantially spherical diodes; forming at least one second conductor coupled to the substantially spherical diodes; and depositing or attaching a plurality of substantially spherical lenses suspended in a first polymer. The lenses and the suspending polymer have different indices of refraction. In some embodiments, the lenses and diodes have a ratio of mean diameters or lengths between about 10:1 and 2:1. In various embodiments, the forming, coupling and converting steps are performed by or through a printing process.

Organic Light-Emitting Transistors: Materials, Device Configurations, and Operations.

PubMed

Zhang, Congcong; Chen, Penglei; Hu, Wenping

2016-03-09

Organic light-emitting transistors (OLETs) represent an emerging class of organic optoelectronic devices, wherein the electrical switching capability of organic field-effect transistors (OFETs) and the light-generation capability of organic light-emitting diodes (OLEDs) are inherently incorporated in a single device. In contrast to conventional OFETs and OLEDs, the planar device geometry and the versatile multifunctional nature of OLETs not only endow them with numerous technological opportunities in the frontier fields of highly integrated organic electronics, but also render them ideal scientific scaffolds to address the fundamental physical events of organic semiconductors and devices. This review article summarizes the recent advancements on OLETs in light of materials, device configurations, operation conditions, etc. Diverse state-of-the-art protocols, including bulk heterojunction, layered heterojunction and laterally arranged heterojunction structures, as well as asymmetric source-drain electrodes, and innovative dielectric layers, which have been developed for the construction of qualified OLETs and for shedding new and deep light on the working principles of OLETs, are highlighted by addressing representative paradigms. This review intends to provide readers with a deeper understanding of the design of future OLETs. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Polarized organic light-emitting device on a flexible giant birefringent optical reflecting polarizer substrate.

PubMed

Park, Byoungchoo; Park, Chan Hyuk; Kim, Mina; Han, Mi-Young

2009-06-08

We present the results of a study of highly linear polarized light emissions from an Organic Light-Emitting Device (OLED) that consisted of a flexible Giant Birefringent Optical (GBO) multilayer polymer reflecting polarizer substrate. Luminous Electroluminescent (EL) emissions over 4,500 cd/m(2) were produced from the polarized OLED with high peak efficiencies in excess of 6 cd/A and 2 lm/W at relatively low operating voltages. The direction of polarization for the emitted EL light corresponded to the passing (ordinary) axis of the GBO-reflecting polarizer. Furthermore, the estimated polarization ratio between the brightness of two linearly polarized EL emissions parallel and perpendicular to the passing axis could be as high as 25 when measured over the whole emitted luminance range.

Operation of a gated field emitter using an individual carbon nanofiber cathode

NASA Astrophysics Data System (ADS)

Guillorn, M. A.; Melechko, A. V.; Merkulov, V. I.; Ellis, E. D.; Britton, C. L.; Simpson, M. L.; Lowndes, D. H.; Baylor, L. R.

2001-11-01

We report on the operation of an integrated gated cathode device using a single vertically aligned carbon nanofiber as the field emission element. This device is capable of operation in a moderate vacuum for extended periods of time without experiencing a degradation of performance. Less than 1% of the total emitted current is collected by the gate electrode, indicating that the emitted electron beam is highly collimated. As a consequence, this device is ideal for applications that require well-focused electron emission from a microscale structure.

[Progress of light extraction enhancement in organic light-emitting devices].

PubMed

Liu, Mo; Li, Tong; Wang, Yan; Zhang, Tian-Yu; Xie, Wen-Fa

2011-04-01

Organic light emitting devices (OLEDs) have been used in flat-panel displays and lighting with a near-30-year development. OLEDs possess many advantages, such as full solid device, fast response, flexible display, and so on. As the application of phosphorescence material, the internal quantum efficiency of OLED has almost reached 100%, but its external quantum efficiency is still not very high due to the low light extraction efficiency. In this review the authors summarizes recent advances in light extraction techniques that have been developed to enhance the light extraction efficiency of OLEDs.

A Planar Hall Thruster for Investigating Electron Mobility in ExB Devices (Preprint)

DTIC Science & Technology

2007-08-24

Hall thruster that emits and collects the Hall current across a planar discharge channel is described. The planar Hall thruster (PHT) is being investigated for use as a test bed to study electron mobility in ExB devices. The planar geometry attempts to de-couple the complex electron motion found in annular thrusters by using simplified geometry. During this initial test, the PHT was operated at discharge voltages between 50-150 V to verify operability and stability of the device. Hall current was emitted by hollow cathode electron sources and

Performance analysis of multi-primary color display based on OLEDs/PLEDs

NASA Astrophysics Data System (ADS)

Xiong, Yan; Deng, Fei; Xu, Shan; Gao, Shufang

2017-09-01

A multi-primary color display, such as the six-primary color format, is a solution in expanding the color gamut of a full-color flat panel display. The performance of a multi-primary color display based on organic/polymer light-emitting diodes was analyzed in this study using the fitting curves of the characteristics of devices (i.e., current density, voltage, luminance). A white emitter was introduced into a six-primary color format to form a seven-primary color format that contributes to energy saving, and the ratio of power efficiency of a seven-primary color display to that of a six-primary color display would increase from 1.027 to 1.061 by using emitting diodes with different electroluminescent efficiencies. Different color matching schemes of the seven-primary color format display were compared in a uniform color space, and the scheme of the color reproduction did not significantly affect the display performance. Although seven- and six-primary color format displays benefit a full-color display with higher quality, they are less efficient than three-primary (i.e., red (R), green (G), and blue (B), RGB) and four-primary (i.e., RGB+white, RGBW) color format displays. For the seven-primary color formats considered in this study, the advantages of white-primary-added display with efficiently developed light-emitting devices were more evident than the format without a white primary.

Studies of the degradation mechanism of organic light-emitting diodes based on tris(8-quinolinolate)aluminum Alq and 2-tert-butyl-9,10-di(2-naphthyl)anthracene TBADN

NASA Astrophysics Data System (ADS)

Jarikov, Viktor V.; Kondakov, Denis Y.

2009-02-01

Previously, radical cation of tris(8-quinolinolate)aluminum (Alq•+) has been associated with the instability of Alq films subjected to holes-only electrical current. Yet, the questions remain (i) whether Alq•+ is the primary source of the intrinsic degradation of bipolar organic light-emitting diodes (OLEDs) based on Alq, (ii) whether Alq•+ reactions result in deep charge traps in holes-only devices as found in bipolar counterparts, and (iii) whether radical cations can be a common source of degradation of OLEDs irrespective of materials. With regards to generality of hole-current-related degradation, it is interesting to examine the behavior of 9,10-diarylanthracenes (DAAs)—the practically important class of blue-fluorescing light-emitting-layer hosts. These questions prompted our comparative study of the effects of unipolar currents in Alq and 2-t-butyl-9,10-di(2-naphthyl)anthracene (TBADN), which was chosen as a representative material of the DAA class. First, we identified device structures allowing for rigorous and stable unipolar conduction. Interestingly, even in pristine holes-only devices, our voltammetric measurements indicated that Alq contains a substantial density of deep hole traps (far deeper than what can be explained by energetic disorder), which can be charged by passing holes-only current and seemingly discharged by exposure to white light. As for aged holes-only Alq devices, they exhibited symptoms qualitatively matching those of aged bipolar Alq devices, viz., photoluminescence (PL) loss, transition voltage (V0) rise, and drive voltage (Vd) rise. Notably, PL and V0 are linearly correlated in both holes-only and bipolar devices, which reinforces the supposed link between Alq•+ and the degradation in both types of devices. Yet, there are indications the Alq•+ instability may not be the only degradation pathway in bipolar devices. Even though our observations for holes-only Alq devices agree qualitatively with previously reported ones, we observe far slower degradation rates [Alq PL fades up to ˜500 times slower in holes-only devices, while Alq electroluminescence (EL) fades ˜50 times slower in bipolar control devices]. It is possible that impurities play a significant, perhaps crucial role in the degradation mechanism of both bipolar and holes-only devices, especially the relatively shorter-lived ones. In sharp contrast to Alq, all three observables (PL, V0, and Vd) indicate that holes-only current in TBADN (neat or doped with a perylene-based blue dopant) does not result in degradation in the time that is sufficient for the corresponding bipolar control devices to lose 60%-80% of EL and 20%-30% of PL. We find that the electrons-only current in Alq or TBADN does not result in degradation either. Thus, the degradation of Alq and DAA bipolar devices may be caused by fundamentally dissimilar mechanisms: while hole current may damage the former, it does not appear to affect the latter, suggesting that the initiation step is different.

Charge injection and accumulation in organic light-emitting diode with PEDOT:PSS anode

NASA Astrophysics Data System (ADS)

Weis, Martin; Otsuka, Takako; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa

2015-04-01

Organic light-emitting diode (OLED) displays using flexible substrates have many attractive features. Since transparent conductive oxides do not fit the requirements of flexible devices, conductive polymer poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS) has been proposed as an alternative. The charge injection and accumulation in OLED devices with PEDOT:PSS anodes are investigated and compared with indium tin oxide anode devices. Higher current density and electroluminescence light intensity are achieved for the OLED device with a PEDOT:PSS anode. The electric field induced second-harmonic generation technique is used for direct observation of temporal evolution of electric fields. It is clearly demonstrated that the improvement in the device performance of the OLED device with a PEDOT:PSS anode is associated with the smooth charge injection and accumulation.

Reshaping Light-Emitting Diodes To Increase External Efficiency

NASA Technical Reports Server (NTRS)

Rogowski, Robert; Egalon, Claudio

1995-01-01

Light-emitting diodes (LEDs) reshaped, according to proposal, increasing amount of light emitted by decreasing fraction of light trapped via total internal reflection. Results in greater luminous output power for same electrical input power; greater external efficiency. Furthermore, light emitted by reshaped LEDs more nearly collimated (less diffuse). Concept potentially advantageous for conventional red-emitting LEDs. More advantageous for new "blue" LEDs, because luminous outputs and efficiencies of these devices very low. Another advantage, proposed conical shapes achieved relatively easily by chemical etching of semiconductor surfaces.

Non-contact pumping of light emitters via non-radiative energy transfer

DOEpatents

Klimov, Victor I.; Achermann, Marc

2010-01-05

A light emitting device is disclosed including a primary light source having a defined emission photon energy output, and, a light emitting material situated near to said primary light source, said light emitting material having an absorption onset equal to or less in photon energy than the emission photon energy output of the primary light source whereby non-radiative energy transfer from said primary light source to said light emitting material can occur yielding light emission from said light emitting material.

The effect of the thicknesses of the various layers on the colour emitted by an organic electroluminescent device

NASA Astrophysics Data System (ADS)

Jolinat, P.; Clergereaux, R.; Farenc, J.; Destruel, P.

1998-05-01

Organic electroluminescent diodes based on thin organic layers are one of the most promising next-generation systems for the backlighting of the liquid crystal screens. Among other methods to obtain white light, three-layer luminescent devices with each layer emitting one of the three fundamental colours have been studied here. Red, green and blue light were produced by 0022-3727/31/10/018/img1 doped with Nile red, 0022-3727/31/10/018/img1 and TPD layers respectively. A fourth thin film of TAZ has been inserted between TPD and 0022-3727/31/10/018/img1 to control injection of electrons into the TPD. The effect of the layers' thicknesses on the spectral emission of the device has been examined. Results show that the thicknesses of TAZ and doped 0022-3727/31/10/018/img1 layers have to be controlled to within a precision of better than 5 Å. The discussion turns on the possibility of applying this technology to screen backlighting.

Self-sensing of temperature rises on light emitting diode based optrodes

NASA Astrophysics Data System (ADS)

Dehkhoda, Fahimeh; Soltan, Ahmed; Ponon, Nikhil; Jackson, Andrew; O'Neill, Anthony; Degenaar, Patrick

2018-04-01

Objective. This work presents a method to determine the surface temperature of microphotonic medical implants like LEDs. Our inventive step is to use the photonic emitter (LED) employed in an implantable device as its own sensor and develop readout circuitry to accurately determine the surface temperature of the device. Approach. There are two primary classes of applications where microphotonics could be used in implantable devices; opto-electrophysiology and fluorescence sensing. In such scenarios, intense light needs to be delivered to the target. As blue wavelengths are scattered strongly in tissue, such delivery needs to be either via optic fibres, two-photon approaches or through local emitters. In the latter case, as light emitters generate heat, there is a potential for probe surfaces to exceed the 2 °C regulatory. However, currently, there are no convenient mechanisms to monitor this in situ. Main results. We present the electronic control circuit and calibration method to monitor the surface temperature change of implantable optrode. The efficacy is demonstrated in air, saline, and brain. Significance. This paper, therefore, presents a method to utilize the light emitting diode as its own temperature sensor.

[Performance dependence of organic light-emitting devices on the thickness of Alq3 emitting layer].

PubMed

Lian, Jia-rong; Liao, Qiao-sheng; Yang, Rui-bo; Zheng, Wei; Zeng, Peng-ju

2010-10-01

The dependence of opto-electronical characteristics in organic light-emitting devices on the thickness of Alq3 emitter layer was studied, where MoO3, NPB, and Alq3 were used as hole injector, hole transporter, and emitter/electron transporter, respectively. By increasing the thickness of Alq3 layer from 20 to 100 nm, the device current decreased gradually, and the EL spectra of devices performed a little red shift with an obvious broadening in long wavelength range but a little decrease in intensity of short wavelength range. The authors simulated the EL spectra using the photoluminescence (PL) spectra of Alq3 as Alq3 intrinsic emission, which coincided with the experimental EL spectra well. The simulated results suggested that the effect of interference takes the major role in broadening the long wavelength range of EL spectra, and the distribution of emission zone largely affects the profile of EL spectra in short wavelength range.

Improved efficiency in blue phosphorescent organic light-emitting diodes by the stepwise doping structure

NASA Astrophysics Data System (ADS)

Yang, Liping; Wang, Xiaoping; Kou, Zhiqi; Ji, Changyan

2017-04-01

The electro-optical properties of the blue phosphorescent organic light-emitting diodes (PHOLEDs) can be affected by the stepwise doping structure in the emitting layer (EML). A series of multi-EML devices with different doping concentration of blue dopant (FIrpic) are fabricated. The effect of the stepwise doping structure close to the electron transport layer is more obvious than that close to the hole transport layer. When the doping concentration increases gradually from the hole injection side to the electron injection side, the maximum values of the luminance, current and power efficiency can reach to 9745 cd/m2 (at 9 V), 32.0 cd/A and 25.1 lm/W in the device with the asymmetric tri-EML structure, which is improved by about 10% compared with that in the bi-EML device. When the number of the EML is four, the performance of the device becomes worse because of the interface effect resulting from different concentration of dopant.

Electrically and Optically Readable Light Emitting Memories

PubMed Central

Chang, Che-Wei; Tan, Wei-Chun; Lu, Meng-Lin; Pan, Tai-Chun; Yang, Ying-Jay; Chen, Yang-Fang

2014-01-01

Electrochemical metallization memories based on redox-induced resistance switching have been considered as the next-generation electronic storage devices. However, the electronic signals suffer from the interconnect delay and the limited reading speed, which are the major obstacles for memory performance. To solve this problem, here we demonstrate the first attempt of light-emitting memory (LEM) that uses SiO2 as the resistive switching material in tandem with graphene-insulator-semiconductor (GIS) light-emitting diode (LED). By utilizing the excellent properties of graphene, such as high conductivity, high robustness and high transparency, our proposed LEM enables data communication via electronic and optical signals simultaneously. Both the bistable light-emission state and the resistance switching properties can be attributed to the conducting filament mechanism. Moreover, on the analysis of current-voltage characteristics, we further confirm that the electroluminescence signal originates from the carrier tunneling, which is quite different from the standard p-n junction model. We stress here that the newly developed LEM device possesses a simple structure with mature fabrication processes, which integrates advantages of all composed materials and can be extended to many other material systems. It should be able to attract academic interest as well as stimulate industrial application. PMID:24894723

Blue organic light-emitting diodes based on terpyridine-substituted triphenylamine chromophores

NASA Astrophysics Data System (ADS)

Fan, Congbin; Wang, Xiaomei; Luo, Jianfang

2017-02-01

Two terpyridine-substituted triphenylamine chromophores, namely 4-[4-(2,2‧:6‧,2″-terpyridinyl)]phenyltriphenylamine (chromophore I) and 4-[4-(2,2‧:6‧,2″-terpyridinyl)] styryltriphenylamine (chromophore II), have been designed and applied as emitters in organic light-emitting diodes (OLED). Chromophore I and II exhibit high thermal stability with decomposition temperatures higher than 334 °C. And these chromophores show significantly different luminescent performance due to the role of different rigid phenyl/flexible styryl unit interlinking terpyridine and triphenylamine units which have different lowest unoccupied molecular orbital (LUMO) levels. The fluorescence lifetime of chromophore I is 3-fold longer than that of chromophore II and the maximum brightness of device used chromophore I as an emitting-layer in OLED is 28-fold larger than that of chromophore II in OLED. Chromophore I as an emitter in OLED exhibits blue electroluminescence peak at 460 nm (Commission Internationale de L'Eclairage (CIE) x = 0.19, y = 0.22). By using chromophore I as an emitter in a four layers device, an efficient blue emission with the maximum brightness 3000 cd/m2 and maximum luminescence efficiency 3.6 cd/A is obtained.

Electroluminescent refrigeration by ultra-efficient GaAs light-emitting diodes

NASA Astrophysics Data System (ADS)

Patrick Xiao, T.; Chen, Kaifeng; Santhanam, Parthiban; Fan, Shanhui; Yablonovitch, Eli

2018-05-01

Electroluminescence—the conversion of electrons to photons in a light-emitting diode (LED)—can be used as a mechanism for refrigeration, provided that the LED has an exceptionally high quantum efficiency. We investigate the practical limits of present optoelectronic technology for cooling applications by optimizing a GaAs/GaInP double heterostructure LED. We develop a model of the design based on the physics of detailed balance and the methods of statistical ray optics, and predict an external luminescence efficiency of ηext = 97.7% at 263 K. To enhance the cooling coefficient of performance, we pair the refrigerated LED with a photovoltaic cell, which partially recovers the emitted optical energy as electricity. For applications near room temperature and moderate power densities (1.0-10 mW/cm2), we project that an electroluminescent refrigerator can operate with up to 1.7× the coefficient of performance of thermoelectric coolers with ZT = 1, using the material quality in existing GaAs devices. We also predict superior cooling efficiency for cryogenic applications relative to both thermoelectric and laser cooling. Large improvements to these results are possible with optoelectronic devices that asymptotically approach unity luminescence efficiency.

Silicon-based material with spiro-annulated fluorene/triphenylamine as host and exciton-blocking layer for blue electrophosphorescent devices.

PubMed

Chen, Hua; Jiang, Zuo-Quan; Gao, Chun-Hong; Xu, Mei-Feng; Dong, Shou-Cheng; Cui, Lin-Song; Ji, Shun-Jun; Liao, Liang-Sheng

2013-08-26

A novel silicon-based compound, 10-phenyl-2'-(triphenylsilyl)-10H-spiro[acridine-9,9'-fluorene] (SSTF), with spiro structure has been designed, synthesized, and characterized. Its thermal, electronic absorption, and photoluminescence properties were studied. Its energy levels make it suitable as a host material or exciton-blocking material in blue phosphorescent organic light-emitting diodes (PhOLEDs). Accordingly, blue-emitting devices with iridium(III) bis[(4,6-difluorophenyl)-pyridinato-N,C(2)']picolinate (FIrpic) as phosphorescent dopant have been fabricated and show high efficiency with low roll-off. In particular, 44.0 cd A(-1) (41.3 lm W(-1)) at 100 cd m(-2) and 41.9 cd A(-1) (32.9 lm W(-1)) at 1000 cd m(-2) were achieved when SSTF was used as host material; 28.1 lm W(-1) at 100 cd m(-2) and 20.6 lm W(-1) at 1000 cd m(-2) were achieved when SSTF was used as exciton-blocking layer. All of the results are superior to those of the reference devices and show the potential applicability and versatility of SSTF in blue PhOLEDs. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Fabrication techniques and applications of flexible graphene-based electronic devices

NASA Astrophysics Data System (ADS)

Luqi, Tao; Danyang, Wang; Song, Jiang; Ying, Liu; Qianyi, Xie; He, Tian; Ningqin, Deng; Xuefeng, Wang; Yi, Yang; Tian-Ling, Ren

2016-04-01

In recent years, flexible electronic devices have become a hot topic of scientific research. These flexible devices are the basis of flexible circuits, flexible batteries, flexible displays and electronic skins. Graphene-based materials are very promising for flexible electronic devices, due to their high mobility, high elasticity, a tunable band gap, quantum electronic transport and high mechanical strength. In this article, we review the recent progress of the fabrication process and the applications of graphene-based electronic devices, including thermal acoustic devices, thermal rectifiers, graphene-based nanogenerators, pressure sensors and graphene-based light-emitting diodes. In summary, although there are still a lot of challenges needing to be solved, graphene-based materials are very promising for various flexible device applications in the future. Project supported by the National Natural Science Foundation of China (Nos. 60936002, 61025021, 61434001, 61574083), the State Key Development Program for Basic Research of China (No. 2015CB352100), the National Key Project of Science and Technology (No. 2011ZX02403-002) and the Special Fund for Agroscientific Research in the Public Interest of China (No. 201303107). M.A.M is additionally supported by the Postdoctoral Fellowship (PDF) Program of the Natural Sciences and Engineering Research Council (NSERC) of Canada and China's Postdoctoral Science Foundation (CPSF).

Method of making organic light emitting devices

DOEpatents

Shiang, Joseph John [Niskayuna, NY; Janora, Kevin Henry [Schenectady, NY; Parthasarathy, Gautam [Saratoga Springs, NY; Cella, James Anthony [Clifton Park, NY; Chichak, Kelly Scott [Clifton Park, NY

2011-03-22

The present invention provides a method for the preparation of organic light-emitting devices comprising a bilayer structure made by forming a first film layer comprising an electroactive material and an INP precursor material, and exposing the first film layer to a radiation source under an inert atmosphere to generate an interpenetrating network polymer composition comprising the electroactive material. At least one additional layer is disposed on the reacted first film layer to complete the bilayer structure. The bilayer structure is comprised within an organic light-emitting device comprising standard features such as electrodes and optionally one or more additional layers serving as a bipolar emission layer, a hole injection layer, an electron injection layer, an electron transport layer, a hole transport layer, exciton-hole transporting layer, exciton-electron transporting layer, a hole transporting emission layer, or an electron transporting emission layer.

Laboratory Tests

MedlinePlus

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Highly efficient tandem organic light-emitting devices employing an easily fabricated charge generation unit

NASA Astrophysics Data System (ADS)

Yang, Huishan; Yu, Yaoyao; Wu, Lishuang; Qu, Biao; Lin, Wenyan; Yu, Ye; Wu, Zhijun; Xie, Wenfa

2018-02-01

We have realized highly efficient tandem organic light-emitting devices (OLEDs) employing an easily fabricated charge generation unit (CGU) combining 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile with ultrathin bilayers of CsN3 and Al. The charge generation and separation processes of the CGU have been demonstrated by studying the differences in the current density-voltage characteristics of external-carrier-excluding devices. At high luminances of 1000 and 10000 cd/m2, the current efficiencies of the phosphorescent tandem device are about 2.2- and 2.3-fold those of the corresponding single-unit device, respectively. Simultaneously, an efficient tandem white OLED exhibiting high color stability and warm white emission has also been fabricated.

A study of effects of electrode contacts on performance of organic-based light-emitting field-effect transistors

NASA Astrophysics Data System (ADS)

Kim, Dae-Kyu; Choi, Jong-Ho

2018-02-01

Herein is presented a comparative performance analysis of heterojunction organic-based light-emitting field-effect transistors (OLEFETs) with symmetric (Au only) and asymmetric (Au and LiF/Al) electrode contacts. The devices had a top source-drain contact with long-channel geometry and were produced by sequentially depositing p-type pentacene and n-type N,N‧-ditridecylperylene-3,4,9,10-tetracarboxylic diimide (P13) using a neutral cluster beam deposition apparatus. The spectroscopic, structural and morphological properties of the organic thin films were examined using photoluminescence (PL) spectroscopy, X-ray diffraction (XRD) method, laser scanning confocal and atomic force microscopy (LSCM, AFM). Based upon the growth of high-quality, well-packed crystalline thin films, the devices demonstrated ambipolar field-effect characteristics, stress-free operational stability, and light emission under ambient conditions. Various device parameters were derived from the fits of the observed characteristics. The hole mobilities were nearly equal irrespective of the electrode contacts, whereas the electron mobilities of the transistors with LiF/Al drain electrodes were higher due to the low injection barrier. For the OLEFETs with symmetric electrodes, electroluminescence (EL) occurred only in the vicinity of the hole-injecting electrode, whereas for the OLEFETs with asymmetric electrodes, the emission occurred in the vicinity of both hole- and electron-injecting electrodes. By tuning the carrier injection and transport through high- and low-work function metals, the hole-electron recombination sites could be controlled. The operating conduction and light emission mechanism are discussed with the aid of EL images obtained using a charge-coupled device (CCD) camera.

LASER BIOLOGY AND MEDICINE: Medical instruments based on high-power diode and fibre lasers

NASA Astrophysics Data System (ADS)

Gapontsev, V. P.; Minaev, V. P.; Savin, V. I.; Samartsev, I. E.

2002-11-01

The characteristics and possible applications of scalpels based on diode and fibre lasers emitting at 0.97, 1.06, 1.56, and 1.9 μm, which are produced and developed by the IRE-Polyus Co., are presented. The advantages of such devices and the possibilities for increasing their output power and extending their spectral range are shown.

Serum and plasma for total and free anticonvulsant drug analyses: effects on EMIT assays and ultrafiltration devices.

PubMed

Godolphin, W; Trepanier, J; Farrell, K

1983-01-01

The suitability of serum and plasma anticoagulated with heparin, EDTA, citrate, or oxalate was assessed for analysis of free and total phenytoin, carbamazepine, and valproic acid. The free fraction was isolated by ultrafiltration through FreeLevel devices (Syva, Palo Alto, CA). Serum, heparin, and EDTA plasma were satisfactory for both free and total phenytoin and carbamazepine. EDTA could not be used for EMIT (Syva) analysis of valproate. Citrate and, to a lesser degree, oxalate cause a significant negative interference in the concentration of these three drugs as measured both by EMIT and gas-liquid chromatography.

Electrical and Optical Enhancement in Internally Nanopatterned Organic Light-Emitting Diodes

NASA Astrophysics Data System (ADS)

Fina, Michael Dane

Organic light-emitting diodes (OLEDs) have made tremendous technological progress in the past two decades and have emerged as a top competitor for next generation light-emitting displays and lighting. State-of-the-art OLEDs have been reported in literature to approach, and even surpass, white fluorescent tube efficiency. However, despite rapid technological progress, efficiency metrics must be improved to compete with traditional inorganic light-emitting diode (LED) technology. Organic materials possess specialized traits that permit manipulations to the light-emitting cavity. Overall, as demonstrated within, these modifications can be used to improve electrical and optical device efficiencies. This work is focused at analyzing the effects that nanopatterned geometric modifications to the organic active layers play on device efficiency. In general, OLED efficiency is complicated by the complex, coupled processes which contribute to spontaneous dipole emission. A composite of three sub-systems (electrical, exciton and optical) ultimately dictate the OLED device efficiency. OLED electrical operation is believed to take place via a low-mobility-modified Schottky injection process. In the injection-limited regime, geometric effects are expected to modify the local electric field leading to device current enhancement. It is shown that the patterning effect can be used to enhance charge carrier parity, thereby enhancing overall recombination. Current density and luminance characteristics are shown to be improved by OLED nanopatterning from both the model developed within and experimental techniques. Next, the optical enhancement effects produced by the nanopatterned array are considered. Finite-difference time-domain (FDTD) simulations are used to determine positional, spectral optical enhancement for the nanopatterned device. The results show beneficial effects to the device performance. The optical enhancements are related to the reduction in internal radiative quenching (improved internal quantum efficiency) and improvement in light extraction (improved outcoupling efficiency). Furthermore, the electrical model is used to construct a positional radiative efficiency map that when combined with the optical enhancement reveals the overall external quantum efficiency enhancement.

ZnO-based ultra-violet light emitting diodes and nanostructures fabricated by atomic layer deposition

NASA Astrophysics Data System (ADS)

Chen, Miin-Jang; Yang, Jer-Ren; Shiojiri, Makoto

2012-07-01

We have investigated ZnO-based light-emitting diodes (LEDs) fabricated by atomic layer deposition (ALD), demonstrating that ALD is one of the noteworthy techniques to prepare high-quality ZnO required for ultraviolet (UV) photonic devices. Here, we review our recent investigations on different ZnO-based heterojunction LEDs such as n-ZnO/p-GaN LEDS, n-ZnO:Al/ZnO nanodots-SiO2 composite/p-GaN LEDS, n-ZnO/ZnO nanodots-SiO2 composite/p-AlGaN LEDs, n-ZnO:Al/i-ZnO/p-SiC(4H) LEDs, and also on ZnO-based nanostructures including ZnO quantum dots embedded in SiO2 nanoparticle layer, ZnO nanopillars on sapphire substrates, Al-doped ZnO films on sapphire substrate and highly (0 0 0 1)-oriented ZnO films on amorphous glass substrate. The latest investigation also demonstrated p-type ZnO:P films prepared on amorphous silica substrates, which allow us to fabricate ZnO-based homojunction LEDs. These devices and structures were studied by x-ray diffraction and various analytical electron microscopy observations as well as electric and electro-optical measurements.

Lead-Free MA2CuCl(x)Br(4-x) Hybrid Perovskites.

PubMed

Cortecchia, Daniele; Dewi, Herlina Arianita; Yin, Jun; Bruno, Annalisa; Chen, Shi; Baikie, Tom; Boix, Pablo P; Grätzel, Michael; Mhaisalkar, Subodh; Soci, Cesare; Mathews, Nripan

2016-02-01

Despite their extremely good performance in solar cells with efficiencies approaching 20% and the emerging application for light-emitting devices, organic-inorganic lead halide perovskites suffer from high content of toxic, polluting, and bioaccumulative Pb, which may eventually hamper their commercialization. Here, we present the synthesis of two-dimensional (2D) Cu-based hybrid perovskites and study their optoelectronic properties to investigate their potential application in solar cells and light-emitting devices, providing a new environmental-friendly alternative to Pb. The series (CH3NH3)2CuCl(x)Br(4-x) was studied in detail, with the role of Cl found to be essential for stabilization. By exploiting the additional Cu d-d transitions and appropriately tuning the Br/Cl ratio, which affects ligand-to-metal charge transfer transitions, the optical absorption in this series of compounds can be extended to the near-infrared for optimal spectral overlap with the solar irradiance. In situ formation of Cu(+) ions was found to be responsible for the green photoluminescence of this material set. Processing conditions for integrating Cu-based perovskites into photovoltaic device architectures, as well as the factors currently limiting photovoltaic performance, are discussed: among them, we identified the combination of low absorption coefficient and heavy mass of the holes as main limitations for the solar cell efficiency. To the best of our knowledge, this is the first demonstration of the potential of 2D copper perovskite as light harvesters and lays the foundation for further development of perovskite based on transition metals as alternative lead-free materials. Appropriate molecular design will be necessary to improve the material's properties and solar cell performance filling the gap with the state-of-the-art Pb-based perovskite devices.

Solid State Research, 1975:4

DTIC Science & Technology

1975-11-15

2.8kA/cm for broad- area devices, has been achieved for Ga. In As, _ P /inP double-heterostructure 1 -x x 1 -y y diode lasers emitting ... LIGHT (b) reverse-biasing the p -n~ junction). This should facilitate the fabrication of modulators and switches using electroabsorption and...temperature operation of Ga In As, P /inP double-heterostructure (DH) diode lasers has been achieved. Broad-area devices emitting at 1.1

Simple single-emitting layer hybrid white organic light emitting with high color stability

NASA Astrophysics Data System (ADS)

Nguyen, C.; Lu, Z. H.

2017-10-01

Simultaneously achieving a high efficiency and color quality at luminance levels required for solid-state lighting has been difficult for white organic light emitting diodes (OLEDs). Single-emitting layer (SEL) white OLEDs, in particular, exhibit a significant tradeoff between efficiency and color stability. Furthermore, despite the simplicity of SEL white OLEDs being its main advantage, the reported device structures are often complicated by the use of multiple blocking layers. In this paper, we report a highly simplified three-layered white OLED that achieves a low turn-on voltage of 2.7 V, an external quantum efficiency of 18.9% and power efficiency of 30 lm/W at 1000 cd/cm2. This simple white OLED also shows good color quality with a color rendering index of 75, CIE coordinates (0.42, 0.46), and little color shifting at high luminance. The device consists of a SEL sandwiched between a hole transport layer and an electron transport layer. The SEL comprises a thermally activated delayer fluorescent molecule having dual functions as a blue emitter and as a host for other lower energy emitters. The improved color stability and efficiency in such a simple device structure is explained as due to the elimination of significant energy barriers at various organic-organic interfaces in the traditional devices having multiple blocking layers.

Electrical degradation of triarylamine-based light-emitting polymer diodes monitored by micro-Raman spectroscopy

NASA Astrophysics Data System (ADS)

Kim, Ji-Seon; Ho, Peter K. H.; Murphy, Craig E.; Seeley, Alex J. A. B.; Grizzi, Ilaria; Burroughes, Jeremy H.; Friend, Richard H.

2004-03-01

Although much progress has been made in improving polymer light-emitting diode performance, there has been little work to address device intrinsic degradation mechanisms due to the challenge of tracking minute chemical reactions in the 100-nm-thick buried active layers during operation. Here we have elucidated a hole-mediated electrical degradation of triarylamine-based blue polymer diodes using in situ Raman microspectroscopy. A slow irreversible hole-doping of polymer adjacent to the hole-injecting conducting-polymer leads to formation of oxidised triarylamine species counterbalanced by anions from the conducting-polymer. These charged species act as luminescence quenchers and hinder further hole injection across the interface leading to significant decreases in current density at low voltages.

Influence of confinement layers in the emitting layer of the blue phosphorescent organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Ji, Chang-Yan; Gu, Zheng-Tian; Kou, Zhi-Qi

2016-10-01

The electrical and optical properties of the blue phosphorescent organic light-emitting diodes (PHOLEDs) can be affected by the various structure of confinement layer in the emitting layer (EML). A series of devices with different electron or hole confinement layer (TCTA or Bphen) are fabricated, it is more effective to balance charge carriers injection for the device with the double electron confinement layers structure, the power efficiency and luminance can reach 17.7 lm/W (at 103 cd/m2) and 3536 cd/m2 (at 8 V). In case of the same double electron confinement layers, another series of devices with different profile of EML are fabricated by changing the confinement layers position, the power efficiency and luminance can be improved to 21.7 lm/W (at 103 cd/m2) and 7674 cd/m2 (at 8 V) when the thickness of EML separated by confinement layers increases gradually from the hole injection side to the electron injection side, the driving voltage can also be reduced.

Ultrasonic spray coating polymer and small molecular organic film for organic light-emitting devices.

PubMed

Liu, Shihao; Zhang, Xiang; Zhang, Letian; Xie, Wenfa

2016-11-22

Ultrasonic spray coating process (USCP) with high material -utilization, low manufacture costs and compatibility to streamline production has been attractive in researches on photoelectric devices. However, surface tension exists in the solvent is still a huge obstacle to realize smooth organic film for organic light emitting devices (OLEDs) by USCP. Here, high quality polymer anode buffer layer and small molecular emitting layer are successfully realized through USCP by introducing extra-low surface tension diluent and surface tension control method. The introduction of low surface tension methyl alcohol is beneficial to the formation of poly (3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) films and brings obvious phase separation and improved conductivity to PEDOT:PSS film. Besides, a surface tension control method, in which new stable tension equilibrium is built at the border of wetting layer, is proposed to eliminate the effect of surface tension during the solvent evaporation stage of ultrasonic spray coating the film consists of 9,9-Spirobifluoren-2-yl-diphenyl-phosphine oxide doped with 10 wt% tris [2-(p -tolyl) pyridine] iridium (III). A smooth and homogenous small molecular emitting layer without wrinkles is successfully realized. The effectiveness of the ultrasonic spray coating polymer anode buffer layer and small molecular emitting layer are also proved by introducing them in OLEDs.

Ultrasonic spray coating polymer and small molecular organic film for organic light-emitting devices

NASA Astrophysics Data System (ADS)

Liu, Shihao; Zhang, Xiang; Zhang, Letian; Xie, Wenfa

2016-11-01

Ultrasonic spray coating process (USCP) with high material -utilization, low manufacture costs and compatibility to streamline production has been attractive in researches on photoelectric devices. However, surface tension exists in the solvent is still a huge obstacle to realize smooth organic film for organic light emitting devices (OLEDs) by USCP. Here, high quality polymer anode buffer layer and small molecular emitting layer are successfully realized through USCP by introducing extra-low surface tension diluent and surface tension control method. The introduction of low surface tension methyl alcohol is beneficial to the formation of poly (3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) films and brings obvious phase separation and improved conductivity to PEDOT:PSS film. Besides, a surface tension control method, in which new stable tension equilibrium is built at the border of wetting layer, is proposed to eliminate the effect of surface tension during the solvent evaporation stage of ultrasonic spray coating the film consists of 9,9-Spirobifluoren-2-yl-diphenyl-phosphine oxide doped with 10 wt% tris [2-(p -tolyl) pyridine] iridium (III). A smooth and homogenous small molecular emitting layer without wrinkles is successfully realized. The effectiveness of the ultrasonic spray coating polymer anode buffer layer and small molecular emitting layer are also proved by introducing them in OLEDs.

Ultrasonic spray coating polymer and small molecular organic film for organic light-emitting devices

PubMed Central

Liu, Shihao; Zhang, Xiang; Zhang, Letian; Xie, Wenfa

2016-01-01

Ultrasonic spray coating process (USCP) with high material -utilization, low manufacture costs and compatibility to streamline production has been attractive in researches on photoelectric devices. However, surface tension exists in the solvent is still a huge obstacle to realize smooth organic film for organic light emitting devices (OLEDs) by USCP. Here, high quality polymer anode buffer layer and small molecular emitting layer are successfully realized through USCP by introducing extra-low surface tension diluent and surface tension control method. The introduction of low surface tension methyl alcohol is beneficial to the formation of poly (3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) films and brings obvious phase separation and improved conductivity to PEDOT:PSS film. Besides, a surface tension control method, in which new stable tension equilibrium is built at the border of wetting layer, is proposed to eliminate the effect of surface tension during the solvent evaporation stage of ultrasonic spray coating the film consists of 9,9-Spirobifluoren-2-yl-diphenyl-phosphine oxide doped with 10 wt% tris [2-(p -tolyl) pyridine] iridium (III). A smooth and homogenous small molecular emitting layer without wrinkles is successfully realized. The effectiveness of the ultrasonic spray coating polymer anode buffer layer and small molecular emitting layer are also proved by introducing them in OLEDs. PMID:27874030

Fabrication of full-color GaN-based light-emitting diodes on nearly lattice-matched flexible metal foils.

PubMed

Kim, Hyeryun; Ohta, Jitsuo; Ueno, Kohei; Kobayashi, Atsushi; Morita, Mari; Tokumoto, Yuki; Fujioka, Hiroshi

2017-05-18

GaN-based light-emitting diodes (LEDs) have been widely accepted as highly efficient solid-state light sources capable of replacing conventional incandescent and fluorescent lamps. However, their applications are limited to small devices because their fabrication process is expensive as it involves epitaxial growth of GaN by metal-organic chemical vapor deposition (MOCVD) on single crystalline sapphire wafers. If a low-cost epitaxial growth process such as sputtering on a metal foil can be used, it will be possible to fabricate large-area and flexible GaN-based light-emitting displays. Here we report preparation of GaN films on nearly lattice-matched flexible Hf foils using pulsed sputtering deposition (PSD) and demonstrate feasibility of fabricating full-color GaN-based LEDs. It was found that introduction of low-temperature (LT) grown layers suppressed the interfacial reaction between GaN and Hf, allowing the growth of high-quality GaN films on Hf foils. We fabricated blue, green, and red LEDs on Hf foils and confirmed their normal operation. The present results indicate that GaN films on Hf foils have potential applications in fabrication of future large-area flexible GaN-based optoelectronics.

Design and Optimization of a Light-Emitting Diode Projection Micro-Stereolithography Three-Dimensional Manufacturing System

DTIC Science & Technology

2012-12-11

ment, and difficulties creating high aspect ratio features. In addition, conventional mask-based lithography cannot create curved surfaces in the...There are three types of digital mask technologies: (1) liquid crystal display (LCD); (2) digital micromirror device (DMD); and (3) LCoS. LCD is the

MONDO: A tracker for the characterization of secondary fast and ultrafast neutrons emitted in particle therapy

NASA Astrophysics Data System (ADS)

Mirabelli, R.; Battistoni, G.; Giacometti, V.; Patera, V.; Pinci, D.; Sarti, A.; Sciubba, A.; Traini, G.; Marafini, M.

2018-01-01

In Particle Therapy (PT) accelerated charged particles and light ions are used for treating tumors. One of the main limitation to the precision of PT is the emission of secondary particles due to the beam interaction with the patient: secondary emitted neutrons can release a significant dose far from the tumor. Therefore, a precise characterization of their flux, production energy and angle distribution is eagerly needed in order to improve the Treatment Planning Systems (TPS) codes. The principal aim of the MONDO (MOnitor for Neutron Dose in hadrOntherapy) project is the development of a tracking device optimized for the detection of fast and ultra-fast secondary neutrons emitted in PT. The detector consists of a matrix of scintillating square fibres coupled with a CMOS-based readout. Here, we present the characterization of the detector tracker prototype and CMOS-based digital SPAD (Single Photon Avalanche Diode) array sensor tested with protons at the Beam Test Facility (Frascati, Italy) and at the Proton Therapy Centre (Trento, Italy), respectively.

Game theory-based mode cooperative selection mechanism for device-to-device visible light communication

NASA Astrophysics Data System (ADS)

Liu, Yuxin; Huang, Zhitong; Li, Wei; Ji, Yuefeng

2016-03-01

Various patterns of device-to-device (D2D) communication, from Bluetooth to Wi-Fi Direct, are emerging due to the increasing requirements of information sharing between mobile terminals. This paper presents an innovative pattern named device-to-device visible light communication (D2D-VLC) to alleviate the growing traffic problem. However, the occlusion problem is a difficulty in D2D-VLC. This paper proposes a game theory-based solution in which the best-response dynamics and best-response strategies are used to realize a mode-cooperative selection mechanism. This mechanism uses system capacity as the utility function to optimize system performance and selects the optimal communication mode for each active user from three candidate modes. Moreover, the simulation and experimental results show that the mechanism can attain a significant improvement in terms of effectiveness and energy saving compared with the cases where the users communicate via only the fixed transceivers (light-emitting diode and photo diode) or via only D2D.

Study on copper phthalocyanine and perylene-based ambipolar organic light-emitting field-effect transistors produced using neutral beam deposition method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Dae-Kyu; Oh, Jeong-Do; Shin, Eun-Sol

2014-04-28

The neutral cluster beam deposition (NCBD) method has been applied to the production and characterization of ambipolar, heterojunction-based organic light-emitting field-effect transistors (OLEFETs) with a top-contact, multi-digitated, long-channel geometry. Organic thin films of n-type N,N′-ditridecylperylene-3,4,9,10-tetracarboxylic diimide and p-type copper phthalocyanine were successively deposited on the hydroxyl-free polymethyl-methacrylate (PMMA)-coated SiO{sub 2} dielectrics using the NCBD method. Characterization of the morphological and structural properties of the organic active layers was performed using atomic force microscopy and X-ray diffraction. Various device parameters such as hole- and electron-carrier mobilities, threshold voltages, and electroluminescence (EL) were derived from the fits of the observed current-voltage andmore » current-voltage-light emission characteristics of OLEFETs. The OLEFETs demonstrated good field-effect characteristics, well-balanced ambipolarity, and substantial EL under ambient conditions. The device performance, which is strongly correlated with the surface morphology and the structural properties of the organic active layers, is discussed along with the operating conduction mechanism.« less

Characterization of electrically-active defects in ultraviolet light-emitting diodes with laser-based failure analysis techniques

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miller, Mary A.; Tangyunyong, Paiboon; Cole, Edward I.

2016-01-14

Laser-based failure analysis techniques demonstrate the ability to quickly and non-intrusively screen deep ultraviolet light-emitting diodes (LEDs) for electrically-active defects. In particular, two laser-based techniques, light-induced voltage alteration and thermally-induced voltage alteration, generate applied voltage maps (AVMs) that provide information on electrically-active defect behavior including turn-on bias, density, and spatial location. Here, multiple commercial LEDs were examined and found to have dark defect signals in the AVM indicating a site of reduced resistance or leakage through the diode. The existence of the dark defect signals in the AVM correlates strongly with an increased forward-bias leakage current. This increased leakage ismore » not present in devices without AVM signals. Transmission electron microscopy analysis of a dark defect signal site revealed a dislocation cluster through the pn junction. The cluster included an open core dislocation. Even though LEDs with few dark AVM defect signals did not correlate strongly with power loss, direct association between increased open core dislocation densities and reduced LED device performance has been presented elsewhere [M. W. Moseley et al., J. Appl. Phys. 117, 095301 (2015)].« less

Influence of Shell Thickness on the Performance of NiO-Based All-Inorganic Quantum Dot Light-Emitting Diodes.

PubMed

Wang, Ting; Zhu, Bingyan; Wang, Shuangpeng; Yuan, Qilin; Zhang, Han; Kang, Zhihui; Wang, Rong; Zhang, Hanzhuang; Ji, Wenyu

2018-05-02

The effect of shell thickness on the performance of all-inorganic quantum dot light-emitting diodes (QLEDs) is explored by employing a series of green quantum dots (QDs) (Zn x Cd 1- x Se/ZnS core/shell QDs with different ZnS shell thicknesses) as the emitters. ZnO nanoparticles and sol-gel NiO are employed as the electron and hole transport materials, respectively. Time-resolved and steady-state photoluminescence results indicate that positive charging processes might occur for the QDs deposited on NiO, which results in emission quenching of QDs and poor device performance. The thick shell outside the core in QDs not only largely suppresses the QD emission quenching but also effectively preserves the excitons in QDs from dissociation of electron-hole pairs when they are subjected to an electric field. The peak efficiency of 4.2 cd/A and maximum luminance of 4205 cd/m 2 are achieved for the device based on QDs with the thickest shells (∼4.2 nm). We anticipate that these results will spur progress toward the design and realization of efficient all-inorganic QLEDs as a platform for the QD-based full-colored displays.

Characterization of electrically-active defects in ultraviolet light-emitting diodes with laser-based failure analysis techniques

DOE PAGES

Miller, Mary A.; Tangyunyong, Paiboon; Edward I. Cole, Jr.

2016-01-12

In this study, laser-based failure analysis techniques demonstrate the ability to quickly and non-intrusively screen deep ultraviolet light-emitting diodes(LEDs) for electrically-active defects. In particular, two laser-based techniques, light-induced voltage alteration and thermally-induced voltage alteration, generate applied voltage maps (AVMs) that provide information on electrically-active defect behavior including turn-on bias, density, and spatial location. Here, multiple commercial LEDs were examined and found to have dark defect signals in the AVM indicating a site of reduced resistance or leakage through the diode. The existence of the dark defect signals in the AVM correlates strongly with an increased forward-bias leakage current. This increasedmore » leakage is not present in devices without AVM signals. Transmission electron microscopyanalysis of a dark defect signal site revealed a dislocation cluster through the pn junction. The cluster included an open core dislocation. Even though LEDs with few dark AVM defect signals did not correlate strongly with power loss, direct association between increased open core dislocation densities and reduced LED device performance has been presented elsewhere [M. W. Moseley et al., J. Appl. Phys. 117, 095301 (2015)].« less

Home Use Tests

MedlinePlus

... Medical Devices Radiation-Emitting Products Vaccines, Blood & Biologics Animal & Veterinary Cosmetics Tobacco Products Medical Devices Home Medical Devices Products and Medical Procedures In Vitro Diagnostics Home Use Tests Home Use Tests Share Tweet Linkedin Pin it ...

Vertical-cavity surface-emitting laser sources for gigahertz-bandwidth, multiwavelength frequency-domain photon migration

NASA Astrophysics Data System (ADS)

O'Sullivan, Thomas D.; No, Keunsik; Matlock, Alex; Warren, Robert V.; Hill, Brian; Cerussi, Albert E.; Tromberg, Bruce J.

2017-10-01

Frequency-domain photon migration (FDPM) uses modulated laser light to measure the bulk optical properties of turbid media and is increasingly applied for noninvasive functional medical imaging in the near-infrared. Although semiconductor edge-emitting laser diodes have been traditionally used as miniature light sources for this application, we show that vertical-cavity surface-emitting lasers (VCSELs) exhibit output power and modulation performance characteristics suitable for FDPM measurements of tissue optical properties at modulation frequencies exceeding 1 GHz. We also show that an array of multiple VCSEL devices can be coherently modulated at frequencies suitable for FDPM and can improve optical power. In addition, their small size and simple packaging make them an attractive choice as components in wearable sensors and clinical FDPM-based optical spectroscopy systems. We demonstrate the benefits of VCSEL technology by fabricating and testing a unique, compact VCSEL-based optical probe with an integrated avalanche photodiode. We demonstrate sensitivity of the VCSEL-based probe to subcutaneous tissue hemodynamics that was induced during an arterial cuff occlusion of the upper arm in a human subject.

ZnCuInS/ZnSe/ZnS quantum dot-based downconversion light-emitting diodes and their thermal effect

DOE PAGES

Liu, Wenyan; Zhang, Yu; Wang, Dan; ...

2015-08-13

The quantum dot-based light-emitting diodes (QD-LEDs) were fabricated using blue GaN chips and red-, yellow-, and green-emitting ZnCuInS/ZnSe/ZnS QDs. The power efficiencies were measured as 14.0 lm/W for red, 47.1 lm/W for yellow, and 62.4 lm/W for green LEDs at 2.6 V. The temperature effect of ZnCuInS/ZnSe/ZnS QDs on these LEDs was investigated using CIE chromaticity coordinates, spectral wavelength, full width at half-maximum (FWHM) and power efficiencies (PE). The thermal quenching induced by the increased surface temperature of the device was confirmed to be one of the important factors to decrease power efficiencies while the CIE chromaticity coordinates changed littlemore » due to the low emission temperature coefficients of 0.022, 0.050 and 0.068 nm/°C for red-, yellow- and green-emitting ZnCuInS/ZnSe/ZnS QDs. Lastly this indicates that ZnCuInS/ZnSe/ZnS QDs are more suitable for down-conversion LEDs compared to CdSe QDs.« less

Laser deposition of resonant silicon nanoparticles on perovskite for photoluminescence enhancement

NASA Astrophysics Data System (ADS)

Tiguntseva, E. Y.; Zalogina, A. S.; Milichko, V. A.; Zuev, D. A.; Omelyanovich, M. M.; Ishteev, A.; Cerdan Pasaran, A.; Haroldson, R.; Makarov, S. V.; Zakhidov, A. A.

2017-11-01

Hybrid lead halide perovskite based optoelectronics is a promising area of modern technologies yielding excellent characteristics of light emitting diodes and lasers as well as high efficiencies of photovoltaic devices. However, the efficiency of perovskite based devices hold a potential of further improvement. Here we demonstrate high photoluminescence efficiency of perovskites thin films via deposition of resonant silicon nanoparticles on their surface. The deposited nanoparticles have a number of advances over their plasmonic counterparts, which were applied in previous studies. We show experimentally the increase of photoluminescence of perovskite film with the silicon nanoparticles by 150 % as compared to the film without the nanoparticles. The results are supported by numerical calculations. Our results pave the way to high throughput implementation of low loss resonant nanoparticles in order to create highly effective perovskite based optoelectronic devices.

Fluorescent filtered electrophosphorescence

DOEpatents

Forrest, Stephen; Sun, Yiru; Giebink, Noel; Thompson, Mark E.

2010-08-03

The present invention relates to organic light emitting devices (OLEDs), and more specifically to OLEDS that emit light using a combination of fluorescent emitters and phosphorescent emitters for the efficient utilization of all of the electrically generated excitons.

Fluorescent filtered electrophosphorescence

DOEpatents

Forrest, Stephen R [Princeton, NJ; Sun, Yiru [Princeton, NJ; Giebink, Noel [Princeton, NJ; Thompson, Mark E [Anaheim Hills, CA

2009-01-06

The present invention relates to organic light emitting devices (OLEDs), and more specifically to OLEDS that emit light using a combination of fluorescent emitters and phosphorescent emitters for the efficient utilization of all of the electrically generated excitons.

Miniaturized High-Speed Modulated X-Ray Source

NASA Technical Reports Server (NTRS)

Gendreau, Keith C. (Inventor); Arzoumanian, Zaven (Inventor); Kenyon, Steven J. (Inventor); Spartana, Nick Salvatore (Inventor)

2015-01-01

A miniaturized high-speed modulated X-ray source (MXS) device and a method for rapidly and arbitrarily varying with time the output X-ray photon intensities and energies. The MXS device includes an ultraviolet emitter that emits ultraviolet light, a photocathode operably coupled to the ultraviolet light-emitting diode that emits electrons, an electron multiplier operably coupled to the photocathode that multiplies incident electrons, and an anode operably coupled to the electron multiplier that is configured to produce X-rays. The method for modulating MXS includes modulating an intensity of an ultraviolet emitter to emit ultraviolet light, generating electrons in response to the ultraviolet light, multiplying the electrons to become more electrons, and producing X-rays by an anode that includes a target material configured to produce X-rays in response to impact of the more electrons.

Towards efficient next generation light sources: combined solution processed and evaporated layers for OLEDs

NASA Astrophysics Data System (ADS)

Hartmann, D.; Sarfert, W.; Meier, S.; Bolink, H.; García Santamaría, S.; Wecker, J.

2010-05-01

Typically high efficient OLED device structures are based on a multitude of stacked thin organic layers prepared by thermal evaporation. For lighting applications these efficient device stacks have to be up-scaled to large areas which is clearly challenging in terms of high through-put processing at low-cost. One promising approach to meet cost-efficiency, high through-put and high light output is the combination of solution and evaporation processing. Moreover, the objective is to substitute as many thermally evaporated layers as possible by solution processing without sacrificing the device performance. Hence, starting from the anode side, evaporated layers of an efficient white light emitting OLED stack are stepwise replaced by solution processable polymer and small molecule layers. In doing so different solutionprocessable hole injection layers (= polymer HILs) are integrated into small molecule devices and evaluated with regard to their electro-optical performance as well as to their planarizing properties, meaning the ability to cover ITO spikes, defects and dust particles. Thereby two approaches are followed whereas in case of the "single HIL" approach only one polymer HIL is coated and in case of the "combined HIL" concept the coated polymer HIL is combined with a thin evaporated HIL. These HIL architectures are studied in unipolar as well as bipolar devices. As a result the combined HIL approach facilitates a better control over the hole current, an improved device stability as well as an improved current and power efficiency compared to a single HIL as well as pure small molecule based OLED stacks. Furthermore, emitting layers based on guest/host small molecules are fabricated from solution and integrated into a white hybrid stack (WHS). Up to three evaporated layers were successfully replaced by solution-processing showing comparable white light emission spectra like an evaporated small molecule reference stack and lifetime values of several 100 h.

Sodium bromide additive improved film morphology and performance in perovskite light-emitting diodes

NASA Astrophysics Data System (ADS)

Li, Jinghai; Cai, Feilong; Yang, Liyan; Ye, Fanghao; Zhang, Jinghui; Gurney, Robert S.; Liu, Dan; Wang, Tao

2017-07-01

Organometal halide perovskite is a promising material to fabricate light-emitting diodes (LEDs) via solution processing due to its exceptional optoelectronic properties. However, incomplete precursor conversion and various defect states in the perovskite light-emitting layer lead to low luminance and external quantum efficiency of perovskite LEDs. We show here the addition of an optimum amount of sodium bromide in the methylammonium lead bromide (MAPbBr3) precursor during a one-step perovskite solution casting process can effectively improve the film coverage, enhance the crystallinity, and passivate ionic defects on the surface of MAPbBr3 crystal grains, resulting in LEDs with a reduced turn-on voltage from 2.8 to 2.3 V and an enhanced maximum luminance from 1059 to 6942 Cd/m2 when comparing with the pristine perovskite-based device.

Light emitting elastomer compositions and method of use

DOEpatents

McElhanon, James R.; Zifer, Thomas; Whinnery, LeRoy L.

2004-11-23

There is provided a light emitting device comprising a plurality of triboluminescent particles dispersed throughout an elastomeric body and activated by deforming the body in order to transfer mechanical energy to some portion of the particles. The light emitted by these mechanically excited particles is collected and directed into a light conduit and transmitted to a detector/indicator means.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Riza, Nabeel Agha; Perez, Frank

A remote temperature sensing system includes a light source selectively producing light at two different wavelengths and a sensor device having an optical path length that varies as a function of temperature. The sensor receives light emitted by the light source and redirects the light along the optical path length. The system also includes a detector receiving redirected light from the sensor device and generating respective signals indicative of respective intensities of received redirected light corresponding to respective wavelengths of light emitted by the light source. The system also includes a processor processing the signals generated by the detector tomore » calculate a temperature of the device.« less

Wavelength dispersion characteristics of integrated silicon avalanche LEDs: potential applications in futuristic on-chip micro- and nano-biosensors

NASA Astrophysics Data System (ADS)

Okhai, Timothy A.; Snyman, Lukas W.; Polleux, Jean-Luc

2016-02-01

Si Av LEDs are easily integrated in on-chip integrated circuitry. They have high modulation frequencies into the GHz range and can be fabricated to sub-micron dimensions. Due to subsurface light generation in the silicon device itself, and the high refractive index differences between silicon and the device environment, the exiting light radiation has interesting dispersion characteristics. Three junction micro p+-np+ Silicon Avalanche based Light Emitting Devices (Si Av LEDs) have been analyzed in terms of dispersion characteristics, generally resulting in different wavelengths of light (colors) being emitted at different angles and solid angles from the surfaces of these devices. The emission wavelength is in the 450 - 850 nm range. The devices are of micron dimension and operate at 8 - 10V, 1μA - 2mA. The emission spot sizes are about 1 micron square. Emission intensities are up to 500 nW.μm-2. The observed dispersion characteristics range from 0.05 degrees per nm per degree at emission angle of 5 degrees, to 0.15 degrees per nm at emission angles of 30 degrees. It is believed that the dispersion characteristics can find interesting and futuristic on-chip electro-optic applications involving particularly a ranging from on chip micro optical wavelength dispersers, communication de-multiplexers, and novel bio-sensor applications. All of these could penetrate into the nanoscale dimensions.

Mobile computing device configured to compute irradiance, glint, and glare of the sun

DOEpatents

Gupta, Vipin P; Ho, Clifford K; Khalsa, Siri Sahib

2014-03-11

Described herein are technologies pertaining to computing the solar irradiance distribution on a surface of a receiver in a concentrating solar power system or glint/glare emitted from a reflective entity. A mobile computing device includes at least one camera that captures images of the Sun and the entity of interest, wherein the images have pluralities of pixels having respective pluralities of intensity values. Based upon the intensity values of the pixels in the respective images, the solar irradiance distribution on the surface of the entity or glint/glare corresponding to the entity is computed by the mobile computing device.

Nanostructured Sublayers for Improved Light Extraction of Top-Emitting and Transparent Organic Electroluminescent Devices

DTIC Science & Technology

2007-05-01

luminous efficiency and wider color gamut . In addition, organic phosphorescent light emitting materials and devices were studied. 15. SUBJECT TERMS...nanostructured Bragg mirrors provided an improved external luminous efficiency and wide color gamut , which will be an essential part of future flat-panel...layers (usually with an ultra-thin shadow mask) or the fabrication of anodes with variable thickness have been used to achieve enhanced color gamut

High-brightness blue organic light emitting diodes with different types of guest-host systems

NASA Astrophysics Data System (ADS)

Wang, Xiao; Zhang, Jing-shuang; Peng, Cui-yun; Guo, Kun-ping; Wei, Bin; Zhang, Hao

2016-03-01

We demonstrate high-brightness blue organic light emitting diodes (OLEDs) using two types of guest-host systems. A series of blue OLEDs were fabricated using three organic emitters of dibenz anthracene (perylene), di(4-fluorophenyl) amino-di (styryl) biphenyl (DSB) and 4,4'-bis[2-(9-ethyl-3-carbazolyl)vinyl]biphenyl (BCzVBi) doped into two hosting materials of 4,4'-bis(9-carbazolyl) biphenyl (CBP) and 2-(4-biphenylyl)-5(4-tert-butyl-phenyl)-1,3,4-oxadiazole (PBD) as blue emitting layers, respectively. We achieve three kinds of devices with colors of deep-blue, pure-blue and sky-blue with the Commission Internationale de L'Eclairage (CIE) coordinates of (0.16, 0.10), (0.15, 0.15) and (0.17, 0.24), respectively, by employing PBD as host material. In addition, we present a microcavity device using the PBD guest-host system and achieve high-purity blue devices with narrowed spectrum.

Effects of cathode thickness and thermal treatment on the design of balanced blue light-emitting polymer device

NASA Astrophysics Data System (ADS)

Chin, Byung Doo; Duan, Lian; Kim, Moo-Hyun; Lee, Seong Taek; Chung, Ho Kyoon

2004-11-01

The interface between layered conjugated polymer and electrode is a most important factor to improve the performance and lifetime of polymeric light-emitting devices (PLEDs). In this work, a blue PLED with improved stability was achieved by the combination of optimized cathode structure as well as thermal treatment of light-emitting polymer (LEP). Experimental evidence of the initial luminance "settling in" stage was found to be dependent upon the cathode structure, while the long-term slope of luminance as a function of elapsed time is governed by the annealing conditions. Our study revealed the importance of extrinsic design of device for the improvement of PLED stability. Experimental data shows that a blue PLED annealed at 170°C and 6nm LiF at LiF /Ca/Al cathode retained the best lifetime, which can be explained by the improved polymer-metal interface and LEP's charge mobility.

Electroluminescent device having improved light output

DOEpatents

Tyan,; Yuan-Sheng, [Webster, NY; Preuss, Donald R [Rochester, NY; Farruggia, Giuseppe [Webster, NY; Kesel, Raymond A [Avon, NY; Cushman, Thomas R [Rochester, NY

2011-03-22

An OLED device including a transparent substrate having a first surface and a second surface, a transparent electrode layer disposed over the first surface of the substrate, a short reduction layer disposed over the transparent electrode layer, an organic light-emitting element disposed over the short reduction layer and including at least one light-emitting layer and a charge injection layer disposed over the light emitting layer, a reflective electrode layer disposed over the charge injection layer and a light extraction enhancement structure disposed over the first or second surface of the substrate; wherein the short reduction layer is a transparent film having a through-thickness resistivity of 10.sup.-9 to 10.sup.2 ohm-cm.sup.2; wherein the reflective electrode layer includes Ag or Ag alloy containing more than 80% of Ag; and the total device size is larger than 10 times the substrate thickness.

A PREP Panel, Practice-Based, Evaluation of the Handling of the Kerr Demi-Ultra Light Curing Unit.

PubMed

Burke, F J Trevor; Crisp, Russell J

2015-09-01

This paper describes the handling evaluation (by a group of practice-based researchers, the PREP Panel) of a recently introduced Light Curing Unit (LCU), the Kerr Demi-Ultra, which possesses a number of novel features such as its ultracapacitor power source, and the Light Emitting Diodes (LEDs) which provide the light output being placed close to the tip of the light guide. CPD/CLINICAL RELEVANCE: Testing of new devices and materials with respect to their handling is of importance, given that an easy to handle device should produce better clinical results than one which is difficult to use.

Apparatus for in-situ nondestructive measurement of Young's modulus of plate structures

NASA Technical Reports Server (NTRS)

Huang, Jerry Qixin (Inventor); Perez, Robert J. (Inventor); DeLangis, Leo M. (Inventor)

2005-01-01

A method and apparatus for determining stiffness of a plate-like structure including a monolithic or composite laminate plate entails disposing a device for generating an acoustical pulse against a surface of the plate and disposing a detecting device against the same surface spaced a known distance from the pulse-generating device, and using the pulse-generating device to emit a pulse so as to create an extensional wave in the plate. The detecting device is used to determine a time of flight of the wave over the known distance, and the wave velocity is calculated. A Young's modulus of the plate is determined by a processor based on the wave velocity. Methods and apparatus for evaluating both isotropic plates and anisotropic laminates are disclosed.

Architectures for Improved Organic Semiconductor Devices

NASA Astrophysics Data System (ADS)

Beck, Jonathan H.

Advancements in the microelectronics industry have brought increasing performance and decreasing prices to a wide range of users. Conventional silicon-based electronics have followed Moore's law to provide an ever-increasing integrated circuit transistor density, which drives processing power, solid-state memory density, and sensor technologies. As shrinking conventional integrated circuits became more challenging, researchers began exploring electronics with the potential to penetrate new applications with a low price of entry: "Electronics everywhere." The new generation of electronics is thin, light, flexible, and inexpensive. Organic electronics are part of the new generation of thin-film electronics, relying on the synthetic flexibility of carbon molecules to create organic semiconductors, absorbers, and emitters which perform useful tasks. Organic electronics can be fabricated with low energy input on a variety of novel substrates, including inexpensive plastic sheets. The potential ease of synthesis and fabrication of organic-based devices means that organic electronics can be made at very low cost. Successfully demonstrated organic semiconductor devices include photovoltaics, photodetectors, transistors, and light emitting diodes. Several challenges that face organic semiconductor devices are low performance relative to conventional devices, long-term device stability, and development of new organic-compatible processes and materials. While the absorption and emission performance of organic materials in photovoltaics and light emitting diodes is extraordinarily high for thin films, the charge conduction mobilities are generally low. Building highly efficient devices with low-mobility materials is one challenge. Many organic semiconductor films are unstable during fabrication, storage, and operation due to reactions with water, oxygen and hydroxide. A final challenge facing organic electronics is the need for new processes and materials for electrodes, semiconductors and substrates compatible with low-temperature, flexible, and oxygenated and aromatic solvent-free fabrication. Materials and processes must be capable of future high volume production in order to enable low costs. In this thesis we explore several techniques to improve organic semiconductor device performance and enable new fabrication processes. In Chapter 2, I describe the integration of sub-optical-wavelength nanostructured electrodes that improve fill factor and power conversion efficiency in organic photovoltaic devices. Photovoltaic fill factor performance is one of the primary challenges facing organic photovoltaics because most organic semiconductors have poor charge mobility. Our electrical and optical measurements and simulations indicate that nanostructured electrodes improve charge extraction in organic photovoltaics. In Chapter 3, I describe a general method for maximizing the efficiency of organic photovoltaic devices by simultaneously optimizing light absorption and charge carrier collection. We analyze the potential benefits of light trapping strategies for maximizing the overall power conversion efficiency of organic photovoltaic devices. This technique may be used to improve organic photovoltaic materials with low absorption, or short exciton diffusion and carrier-recombination lengths, opening up the device design space. In Chapter 4, I describe a process for high-quality graphene transfer onto chemically sensitive, weakly interacting organic semiconductor thin-films. Graphene is a promising flexible and highly transparent electrode for organic electronics; however, transferring graphene films onto organic semiconductor devices was previously impossible. We demonstrate a new transfer technique based on an elastomeric stamp coated with an fluorinated polymer release layer. We fabricate three classes of organic semiconductor devices: field effect transistors without high temperature annealing, transparent organic light-emitting diodes, and transparent small-molecule organic photovoltaic devices.

Diode-laser-based therapy device

NASA Astrophysics Data System (ADS)

Udrea, Mircea V.; Nica, Adriana S.; Florian, Mariana; Poenaru, Daniela; Udrea, Gabriela; Lungeanu, Mihaela; Sporea, Dan G.; Vasiliu, Virgil V.; Vieru, Roxana

2004-10-01

A new therapy laser device is presented. The device consists of a central unit and different types of laser probes. The laser probe model SL7-650 delivers seven red (650 nm), 5 mW diode lasers convergent beams. The beams converge at about 30 cm in front of the laser probe and the irradiated area might be varied by simple displacement of the laser probe with respect to the target. The laser probe SL1-808 emits single infrared laser beam up to 500 mW. The efficiency of the use of this device in physiotherapy, and rheumatology, has been put into evidence after years of testing. Dermatology and microsurgery are users of infrared powerful laser probes. The device has successfully passed technical and clinical tests in order to be certified. The laser device design and some medical results are given.

Improving the performance of doped pi-conjugated polymers for use in organic light-emitting diodes

PubMed

Gross; Muller; Nothofer; Scherf; Neher; Brauchle; Meerholz

2000-06-08

Organic light-emitting diodes (OLEDs) represent a promising technology for large, flexible, lightweight, flat-panel displays. Such devices consist of one or several semiconducting organic layer(s) sandwiched between two electrodes. When an electric field is applied, electrons are injected by the cathode into the lowest unoccupied molecular orbital of the adjacent molecules (simultaneously, holes are injected by the anode into the highest occupied molecular orbital). The two types of carriers migrate towards each other and a fraction of them recombine to form excitons, some of which decay radiatively to the ground state by spontaneous emission. Doped pi-conjugated polymer layers improve the injection of holes in OLED devices; this is thought to result from the more favourable work function of these injection layers compared with the more commonly used layer material (indium tin oxide). Here we demonstrate that by increasing the doping level of such polymers, the barrier to hole injection can be continuously reduced. The use of combinatorial devices allows us to quickly screen for the optimum doping level. We apply this concept in OLED devices with hole-limited electroluminescence (such as polyfluorene-based systems), finding that it is possible to significantly reduce the operating voltage while improving the light output and efficiency.

Development of a new water sterilization device with a 365 nm UV-LED.

PubMed

Mori, Mirei; Hamamoto, Akiko; Takahashi, Akira; Nakano, Masayuki; Wakikawa, Noriko; Tachibana, Satoko; Ikehara, Toshitaka; Nakaya, Yutaka; Akutagawa, Masatake; Kinouchi, Yohsuke

2007-12-01

Ultraviolet (UV) irradiation is an effective disinfection method. In sterilization equipment, a low-pressure mercury lamp emitting an effective germicidal UVC (254 nm) is used as the light source. However, the lamp, which contains mercury, must be disposed of at the end of its lifetime or following damage due to physical shock or vibration. We investigated the suitability of an ultraviolet light-emitting diode at an output wavelength of 365 nm (UVA-LED) as a sterilization device, comparing with the other wavelength irradiation such as 254 nm (a low-pressure mercury lam) and 405 nm (LED). We used a commercially available UVA-LED that emitted light at the shortest wavelength and at the highest output energy. The new sterilization system using the UVA-LED was able to inactivate bacteria, such as Escherichia coli DH5 alpha, Enteropathogenic E. coli, Vibrio parahaemolyticus, Staphylococcus aureus, and Salmonella enterica serovar Enteritidis. The inactivations of the bacteria were dependent on the accumulation of UVA irradiation. Taking advantage of the safety and compact size of LED devices, we expect that the UVA-LED sterilization device can be developed as a new type of water sterilization device.

In vitro and in vivo Efficacy of New Blue Light Emitting Diode Phototherapy Compared to Conventional Halogen Quartz Phototherapy for Neonatal Jaundice

PubMed Central

Chang, Yun Sil; Hwang, Jong Hee; Kwon, Hyuk Nam; Choi, Chang Won; Ko, Sun Young; Park, Won Soon; Shin, Son Moon

2005-01-01

High intensity light emitting diodes (LEDs) are being studied as possible light sources for the phototherapy of neonatal jaundice, as they can emit high intensity light of narrow wavelength band in the blue region of the visible light spectrum corresponding to the spectrum of maximal bilirubin absorption. We developed a prototype blue gallium nitride LED phototherapy unit with high intensity, and compared its efficacy to commercially used halogen quartz phototherapy device by measuring both in vitro and in vivo bilirubin photodegradation. The prototype device with two focused arrays, each with 500 blue LEDs, generated greater irradiance than the conventional device tested. The LED device showed a significantly higher efficacy of bilirubin photodegradation than the conventional phototherapy in both in vitro experiment using microhematocrit tubes (44±7% vs. 35±2%) and in vivo experiment using Gunn rats (30±9% vs. 16±8%). We conclude that high intensity blue LED device was much more effective than conventional phototherapy of both in vitro and in vivo bilirubin photodegradation. Further studies will be necessary to prove its clinical efficacy. PMID:15716604

Perspective: Toward efficient GaN-based red light emitting diodes using europium doping

NASA Astrophysics Data System (ADS)

Mitchell, Brandon; Dierolf, Volkmar; Gregorkiewicz, Tom; Fujiwara, Yasufumi

2018-04-01

While InGaN/GaN blue and green light-emitting diodes (LEDs) are commercially available, the search for an efficient red LED based on GaN is ongoing. The realization of this LED is crucial for the monolithic integration of the three primary colors and the development of nitride-based full-color high-resolution displays. In this perspective, we will address the challenges of attaining red luminescence from GaN under current injection and the methods that have been developed to circumvent them. While several approaches will be mentioned, a large emphasis will be placed on the recent developments of doping GaN with Eu3+ to achieve an efficient red GaN-based LED. Finally, we will provide an outlook to the future of this material as a candidate for small scale displays such as mobile device screens or micro-LED displays.

Two-step narrow ridge cascade diode lasers emitting near $$2~\\mu$$ m

DOE PAGES

Feng, Tao; Hosoda, Takashi; Shterengas, Leon; ...

2017-01-02

Nearly diffraction limited GaSb-based type-I quantum well cascade diode lasers emitting in the spectral region 1.95-2 μm were designed and fabricated. Two-step 5.5-μm-wide shallow and 14-μm-wide deep etched ridge waveguide design yielded devices generating stable single lobe beams with 250 mW of continuous wave output power at 20 °C. Quantum well radiative recombination current contributes about 13% to laser threshold as estimated from true spontaneous emission and modal gain analysis. Here, recombination at etched sidewalls of the 14-μmwide deep ridges controls about 30% of the threshold.

White polymeric light-emitting diodes with high color rendering index

NASA Astrophysics Data System (ADS)

Niu, Xiaodi; Ma, Liang; Yao, Bing; Ding, Junqiao; Tu, Guoli; Xie, Zhiyuan; Wang, Lixiang

2006-11-01

The efficient white polymeric light-emitting diodes based on a white emissive polymer doped with a red phosphorescent dopant were fabricated by spin-coating method. The emission spectrum of the device is broadened to cover the full visible region by doping the red phosphorescent dye and thereby realizes white emission with high color-rendering index (CRI). By controlling the contents of the doped electron-transporting 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole and the red phosphorescent dopant, a luminous efficiency as high as 5.3cd/A and a power efficiency of 3lm/W were obtained with a CRI of 92.

A Strategy for Architecture Design of Crystalline Perovskite Light-Emitting Diodes with High Performance.

PubMed

Shi, Yifei; Wu, Wen; Dong, Hua; Li, Guangru; Xi, Kai; Divitini, Giorgio; Ran, Chenxin; Yuan, Fang; Zhang, Min; Jiao, Bo; Hou, Xun; Wu, Zhaoxin

2018-06-01

All present designs of perovskite light-emitting diodes (PeLEDs) stem from polymer light-emitting diodes (PLEDs) or perovskite solar cells. The optimal structure of PeLEDs can be predicted to differ from PLEDs due to the different fluorescence dynamics and crystallization between perovskite and polymer. Herein, a new design strategy and conception is introduced, "insulator-perovskite-insulator" (IPI) architecture tailored to PeLEDs. As examples of FAPbBr 3 and MAPbBr 3 , it is experimentally shown that the IPI structure effectively induces charge carriers into perovskite crystals, blocks leakage currents via pinholes in the perovskite film, and avoids exciton quenching simultaneously. Consequently, as for FAPbBr 3 , a 30-fold enhancement in the current efficiency of IPI-structured PeLEDs compared to a control device with poly(3,4ethylenedioxythiophene):poly(styrene sulfonate) as hole-injection layer is achieved-from 0.64 to 20.3 cd A -1 -while the external quantum efficiency is increased from 0.174% to 5.53%. As the example of CsPbBr 3 , compared with the control device, both current efficiency and lifetime of IPI-structured PeLEDs are improved from 1.42 and 4 h to 9.86 cd A -1 and 96 h. This IPI architecture represents a novel strategy for the design of light-emitting didoes based on various perovskites with high efficiencies and stabilities. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Stable Radical Materials for Energy Applications.

PubMed

Wilcox, Daniel A; Agarkar, Varad; Mukherjee, Sanjoy; Boudouris, Bryan W

2018-06-07

Although less studied than their closed-shell counterparts, materials containing stable open-shell chemistries have played a key role in many energy storage and energy conversion devices. In particular, the oxidation-reduction (redox) properties of these stable radicals have made them a substantial contributor to the progress of organic batteries. Moreover, the use of radical-based materials in photovoltaic devices and thermoelectric systems has allowed for these emerging molecules to have impacts in the energy conversion realm. Additionally, the unique doublet states of radical-based materials provide access to otherwise inaccessible spin states in optoelectronic devices, offering many new opportunities for efficient usage of energy in light-emitting devices. Here, we review the current state of the art regarding the molecular design, synthesis, and application of stable radicals in these energy-related applications. Finally, we point to fundamental and applied arenas of future promise for these designer open-shell molecules, which have only just begun to be evaluated in full.

Low Voltage, Low Power Organic Light Emitting Transistors for AMOLED Displays

DOE Office of Scientific and Technical Information (OSTI.GOV)

McCarthy, M. A.; Liu, B.; Donoghue, E. P.

2011-01-01

Low voltage, low power dissipation, high aperture ratio organic light emitting transistors are demonstrated. The high level of performance is enabled by a carbon nanotube source electrode that permits integration of the drive transistor and the organic light emitting diode into an efficient single stacked device. Given the demonstrated performance, this technology could break the technical logjam holding back widespread deployment of active matrix organic light emitting displays at flat panel screen sizes.

Effects of electrode modification using calcium on the performance of alternating current field-induced polymer electroluminescent devices

NASA Astrophysics Data System (ADS)

Xia, Yingdong; Chen, Yonghua; Smith, Gregory M.; Li, Yuan; Huang, Wenxiao; Carroll, David L.

2013-06-01

In this work, the effects of electrode modification by calcium (Ca) on the performance of AC field induced polymer electroluminescence (FIPEL) devices are studied. The FIPEL device with Ca/Al electrode exhibits 550 cd m-2, which is 27.5 times higher than that of the device with only an Al electrode (20 cd m-2). Both holes and electrons are injected from one electrode in our FIPEL device. We found that the electron injection can be significantly enhanced by a Ca modification on the Al electrode without greatly affecting the hole injection. Therefore, the electrons and holes can be effectively recombined in the emissive layer to form more excitons under the AC voltage, leading to effective light emission. The device emitted much brighter light than other AC-based organic EL devices. This result provides an easy and effective way to improve FIPEL performance.

Lifetime enhanced phosphorescent organic light emitting diode using an electron scavenger layer

NASA Astrophysics Data System (ADS)

Hong, Seokhwan; Kim, Ji Whan; Lee, Sangyeob

2015-07-01

We demonstrate a method to improve lifetime of a phosphorescent organic light emitting diode (OLED) using an electron scavenger layer (ESL) in a hole transporting layer (HTL) of the device. We use a bis(1-(phenyl)isoquinoline)iridium(III)acetylacetonate [Ir(piq)2(acac)] doped HTL to stimulate radiative decay, preventing thermal degradation in HTL. The ESL effectively prevented non-radiative decay of leakage electron in HTL by converting non-radiative decay to radiative decay via a phosphorescent red emitter, Ir(piq)2(acac). The lifetime of device (t95: time after 5% decrease of luminance) has been increased from 75 h to 120 h by using the ESL in a phosphorescent green-emitting OLED.

Phosphorescent organic light emitting diodes with high efficiency and brightness

DOEpatents

Forrest, Stephen R; Zhang, Yifan

2015-11-12

An organic light emitting device including a) an anode; b) a cathode; and c) an emissive layer disposed between the anode and the cathode, the emissive layer comprising an organic host compound and a phosphorescent compound exhibiting a Stokes Shift overlap greater than 0.3 eV. The organic light emitting device may further include a hole transport layer disposed between the emissive layer and the anode; and an electron transport layer disposed between the emissive layer and the cathode. In some embodiments, the phosphorescent compound exhibits a phosphorescent lifetime of less than 10 .mu.s. In some embodiments, the concentration of the phosphorescent compound ranges from 0.5 wt. % to 10 wt. %.

Silicon-based silicon–germanium–tin heterostructure photonics

PubMed Central

Soref, Richard

2014-01-01

The wavelength range that extends from 1550 to 5000 nm is a new regime of operation for Si-based photonic and opto-electronic integrated circuits. To actualize the new chips, heterostructure active devices employing the ternary SiGeSn alloy are proposed in this paper. Foundry-based monolithic integration is described. Opportunities and challenges abound in creating laser diodes, optical amplifiers, light-emitting diodes, photodetectors, modulators, switches and a host of high-performance passive infrared waveguided components. PMID:24567479

Flip-chip light emitting diode with resonant optical microcavity

DOEpatents

Gee, James M.; Bogart, Katherine H.A.; Fischer, Arthur J.

2005-11-29

A flip-chip light emitting diode with enhanced efficiency. The device structure employs a microcavity structure in a flip-chip configuration. The microcavity enhances the light emission in vertical modes, which are readily extracted from the device. Most of the rest of the light is emitted into waveguided lateral modes. Flip-chip configuration is advantageous for light emitting diodes (LEDs) grown on dielectric substrates (e.g., gallium nitride LEDs grown on sapphire substrates) in general due to better thermal dissipation and lower series resistance. Flip-chip configuration is advantageous for microcavity LEDs in particular because (a) one of the reflectors is a high-reflectivity metal ohmic contact that is already part of the flip-chip configuration, and (b) current conduction is only required through a single distributed Bragg reflector. Some of the waveguided lateral modes can also be extracted with angled sidewalls used for the interdigitated contacts in the flip-chip configuration.

Low-voltage cross-sectional EBIC for characterisation of GaN-based light emitting devices.

PubMed

Moldovan, Grigore; Kazemian, Payam; Edwards, Paul R; Ong, Vincent K S; Kurniawan, Oka; Humphreys, Colin J

2007-01-01

Electron beam induced current (EBIC) characterisation can provide detailed information on the influence of crystalline defects on the diffusion and recombination of minority carriers in semiconductors. New developments are required for GaN light emitting devices, which need a cross-sectional approach to provide access to their complex multi-layered structures. A sample preparation approach based on low-voltage Ar ion milling is proposed here and shown to produce a flat cross-section with very limited surface recombination, which enables low-voltage high resolution EBIC characterisation. Dark defects are observed in EBIC images and correlation with cathodoluminescence images identify them as threading dislocations. Emphasis is placed on one-dimensional quantification which is used to show that junction delineation with very good spatial resolution can be achieved, revealing significant roughening of this GaN p-n junction. Furthermore, longer minority carrier diffusion lengths along the c-axis are found at dislocation sites, in both p-GaN and the multi-quantum well (MQW) region. This is attributed to gettering of point defects at threading dislocations in p-GaN and higher escape rate from quantum wells at dislocation sites in the MQW region, respectively. These developments show considerable promise for the use of low-voltage cross-sectional EBIC in the characterisation of point and extended defects in GaN-based devices and it is suggested that this technique will be particularly useful for degradation analysis.

Conductive nanomaterials for printed electronics.

PubMed

Kamyshny, Alexander; Magdassi, Shlomo

2014-09-10

This is a review on recent developments in the field of conductive nanomaterials and their application in printed electronics, with particular emphasis on inkjet printing of ink formulations based on metal nanoparticles, carbon nanotubes, and graphene sheets. The review describes the basic properties of conductive nanomaterials suitable for printed electronics (metal nanoparticles, carbon nanotubes, and graphene), their stabilization in dispersions, formulations of conductive inks, and obtaining conductive patterns by using various sintering methods. Applications of conductive nanomaterials for electronic devices (transparent electrodes, metallization of solar cells, RFID antennas, TFTs, and light emitting devices) are also briefly reviewed.

Theoretical study of piezo-phototronic nano-LEDs.

PubMed

Liu, Ying; Niu, Simiao; Yang, Qing; Klein, Benjamin D B; Zhou, Yu Sheng; Wang, Zhong Lin

2014-11-12

Two-dimensional finite-element simulation of the piezo-phototronic effect in p-n-junction-based devices is carried out for the first time. A charge channel can be induced at the p-n junction interface when strain is applied, given the n-side is a piezoelectric semiconductor and the p-type side is non-piezoelectric semiconductor. This provides the first simulated evidence supporting the previously suggested mechanism responsible for the experimentally observed gigantic change of light-emission efficiency in piezo-phototronic light-emitting devices. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Stacking multiple connecting functional materials in tandem organic light-emitting diodes

PubMed Central

Zhang, Tao; Wang, Deng-Ke; Jiang, Nan; Lu, Zheng-Hong

2017-01-01

Tandem device is an important architecture in fabricating high performance organic light-emitting diodes and organic photovoltaic cells. The key element in making a high performance tandem device is the connecting materials stack, which plays an important role in electric field distribution, charge generation and charge injection. For a tandem organic light-emitting diode (OLED) with a simple Liq/Al/MoO3 stack, we discovered that there is a significant current lateral spreading causing light emission over an extremely large area outside the OLED pixel when the Al thickness exceeds 2 nm. This spread light emission, caused by an inductive electric field over one of the device unit, limits one’s ability to fabricate high performance tandem devices. To resolve this issue, a new connecting materials stack with a C60 fullerene buffer layer is reported. This new structure permits optimization of the Al metal layer in the connecting stack and thus enables us to fabricate an efficient tandem OLED having a high 155.6 cd/A current efficiency and a low roll-off (or droop) in current efficiency. PMID:28225028

Stacking multiple connecting functional materials in tandem organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhang, Tao; Wang, Deng-Ke; Jiang, Nan; Lu, Zheng-Hong

2017-02-01

Tandem device is an important architecture in fabricating high performance organic light-emitting diodes and organic photovoltaic cells. The key element in making a high performance tandem device is the connecting materials stack, which plays an important role in electric field distribution, charge generation and charge injection. For a tandem organic light-emitting diode (OLED) with a simple Liq/Al/MoO3 stack, we discovered that there is a significant current lateral spreading causing light emission over an extremely large area outside the OLED pixel when the Al thickness exceeds 2 nm. This spread light emission, caused by an inductive electric field over one of the device unit, limits one’s ability to fabricate high performance tandem devices. To resolve this issue, a new connecting materials stack with a C60 fullerene buffer layer is reported. This new structure permits optimization of the Al metal layer in the connecting stack and thus enables us to fabricate an efficient tandem OLED having a high 155.6 cd/A current efficiency and a low roll-off (or droop) in current efficiency.