42. VIEW TO SOUTHEAST; MBE BUILDING, THIRD FLOOR, CONDUCTORS' LOCKER ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

42. VIEW TO SOUTHEAST; MBE BUILDING, THIRD FLOOR, CONDUCTORS' LOCKER ROOM INTERIOR (Dobson) - Los Angeles Union Passenger Terminal, Mail, Baggage, & Express Building, 800 North Alameda Street, Los Angeles, Los Angeles County, CA

43. VIEW TO NORTHEAST; MBE BUILDING, THIRD FLOOR, CONDUCTORS' LOCKER ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

43. VIEW TO NORTHEAST; MBE BUILDING, THIRD FLOOR, CONDUCTORS' LOCKER ROOM INTERIOR (Dobson) - Los Angeles Union Passenger Terminal, Mail, Baggage, & Express Building, 800 North Alameda Street, Los Angeles, Los Angeles County, CA

Impact of MBE deposition conditions on InAs/GaInSb superlattices for very long wavelength infrared detection

NASA Astrophysics Data System (ADS)

Brown, G. J.; Haugan, H. J.; Mahalingam, K.; Grazulis, L.; Elhamri, S.

2015-01-01

The objective of this work is to establish molecular beam epitaxy (MBE) growth processes that can produce high quality InAs/GaInSb superlattice (SL) materials specifically tailored for very long wavelength infrared (VLWIR) detection. To accomplish this goal, several series of MBE growth optimization studies, using a SL structure of 47.0 Å InAs/21.5 Å Ga0.75In0.25Sb, were performed to refine the MBE growth process and optimize growth parameters. Experimental results demonstrated that our "slow" MBE growth process can consistently produce an energy gap near 50 meV. This is an important factor in narrow band gap SLs. However, there are other growth factors that also impact the electrical and optical properties of the SL materials. The SL layers are particularly sensitive to the anion incorporation condition formed during the surface reconstruction process. Since antisite defects are potentially responsible for the inherent residual carrier concentrations and short carrier lifetimes, the optimization of anion incorporation conditions, by manipulating anion fluxes, anion species, and deposition temperature, was systematically studied. Optimization results are reported in the context of comparative studies on the influence of the growth temperature on the crystal structural quality and surface roughness performed under a designed set of deposition conditions. The optimized SL samples produced an overall strong photoresponse signal with a relatively sharp band edge that is essential for developing VLWIR detectors. A quantitative analysis of the lattice strain, performed at the atomic scale by aberration corrected transmission electron microscopy, provided valuable information about the strain distribution at the GaInSb-on-InAs interface and in the InAs layers, which was important for optimizing the anion conditions.

New MBE buffer for micron- and quarter-micron-gateGaAs MESFETs

NASA Technical Reports Server (NTRS)

1988-01-01

A new buffer layer has been developed that eliminates backgating in GaAs MESFETs and substantially reduces short-channel effects in GaAs MESFETs with 0.27-micron-long gates. The new buffer is grown by molecular beam epitaxy (MBE) at a substrate temperature of 200 C using Ga and As sub 4 beam fluxes. The buffer is crystalline, highly resistive, optically inactive, and can be overgrown with high quality GaAs. GaAs MESFETs with a gate length of 0.27 microns that incorporate the new buffer show improved dc and RF properties in comparison with a similar MESFET with a thin undoped GaAs buffer. To demonstrate the backgating performance improvement afforded by the new buffer, MESFETs were fabricated using a number of different buffer layers and structures. A schematic cross section of the MESFET structure used in this study is shown. The measured gate length, gate width, and source-drain spacing of this device are 2,98, and 5.5 microns, respectively. An ohmic contact, isolated from the MESFET by mesa etching, served as the sidegate. The MESFETs were fabricated in MBE n-GaAs layers grown on the new buffer and also in MBE n-GaAs layers grown on buffer layers of undoped GaAs, AlGaAs, and GaAs/AlGaAs superlattices. All the buffer layers were grown by MBE and are 2 microns thick. The active layer is doped to approximately 2 x 10 to the 17th/cu cm with silicon and is 0.3 microns thick.

15. VIEW TO SOUTHWEST; EAST BACK MBE BUILDING, THIRD AND ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

15. VIEW TO SOUTHWEST; EAST BACK MBE BUILDING, THIRD AND SECOND FLOORS; GASOLINE PUMPS CENTER (Dobson) - Los Angeles Union Passenger Terminal, Mail, Baggage, & Express Building, 800 North Alameda Street, Los Angeles, Los Angeles County, CA

50. VIEW TO EAST; SOUTH END OF MBE BUILDING, FIRST ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

50. VIEW TO EAST; SOUTH END OF MBE BUILDING, FIRST FLOOR; SAFE, DOOR OPEN ELECTRONIC FLASH INTERIOR ILLUMINATION (Andersen) - Los Angeles Union Passenger Terminal, Mail, Baggage, & Express Building, 800 North Alameda Street, Los Angeles, Los Angeles County, CA

39. VIEW TO NORTHEAST; WEST FRONT MBE BUILDING, FIRST FLOOR, ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

39. VIEW TO NORTHEAST; WEST FRONT MBE BUILDING, FIRST FLOOR, FRED HARVEY NEWSSTAND STOREROOM (AREA BURNED BY VANDALS) (Dobson) - Los Angeles Union Passenger Terminal, Mail, Baggage, & Express Building, 800 North Alameda Street, Los Angeles, Los Angeles County, CA

Effects of Light Exposure on Dopant Incorporation and Migration in MBE-Grown GaAs(001)

NASA Astrophysics Data System (ADS)

Sanders, Charlotte E.; Beaton, D. A.; Alberi, K.

2015-03-01

Light-stimulated epitaxy of II-VI semiconducting materials is known to reduce crystalline defect density and enhance substitutional dopant incorporation relative to traditional ``dark'' epitaxial growth. These effects have been speculated to arise from photon-adatom interactions at the growth front, and from involvement in bonding processes by photogenerated carriers; however, a conclusive explanation of the observed effects has yet to be found. We are revisiting this topic, attempting to clarify the mechanisms of light-stimulated epitaxy and to explore its effects on the class of III-V materials. Here we report an ongoing investigation into dopant incorporation and migration in MBE-grown GaAs(001) when the growth front is irradiated during deposition. On the basis of our preliminary findings, and by comparing our new results with results previously obtained for light-stimulated effects on doping of II-VI systems, we can begin to draw conclusions about the mechanisms underlying light-stimulated epitaxy and their potential utility to MBE growth of complex multilayer structures. This work was supported by the DOE Office of Science, Basic Energy Sciences, under contract DE-AC36-08G028308.

Recent progress in MBE grown HgCdTe materials and devices at UWA

NASA Astrophysics Data System (ADS)

Gu, R.; Lei, W.; Antoszewski, J.; Madni, I.; Umana-Menbreno, G.; Faraone, L.

2016-05-01

HgCdTe has dominated the high performance end of the IR detector market for decades. At present, the fabrication costs of HgCdTe based advanced infrared devices is relatively high, due to the low yield associated with lattice matched CdZnTe substrates and a complicated cooling system. One approach to ease this problem is to use a cost effective alternative substrate, such as Si or GaAs. Recently, GaSb has emerged as a new alternative with better lattice matching. In addition, implementation of MBE-grown unipolar n-type/barrier/n-type detector structures in the HgCdTe material system has been recently proposed and studied intensively to enhance the detector operating temperature. The unipolar nBn photodetector structure can be used to substantially reduce dark current and noise without impeding photocurrent flow. In this paper, recent progress in MBE growth of HgCdTe infrared material at the University of Western Australia (UWA) is reported, including MBE growth of HgCdTe on GaSb alternative substrates and growth of HgCdTe nBn structures.

52. VIEW TO EAST; SOUTH END OF MBE BUILDING, SECOND ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

52. VIEW TO EAST; SOUTH END OF MBE BUILDING, SECOND FLOOR; HIGHLY ALTERED INTERIOR OFFICE SPACE, FORMERLY REGIONAL OFFICES OF REA (Andersen) - Los Angeles Union Passenger Terminal, Mail, Baggage, & Express Building, 800 North Alameda Street, Los Angeles, Los Angeles County, CA

MBE growth of vertical-cavity surface-emitting laser structure without real-time monitoring

NASA Astrophysics Data System (ADS)

Wu, C. Z.; Tsou, Y.; Tsai, C. M.

1999-05-01

Evaluation of producing a vertical-cavity surface-emitting laser (VCSEL) epitaxial structure by molecular beam epitaxy (MBE) without resorting to any real-time monitoring technique is reported. Continuous grading of Al xGa 1- xAs between x=0.12 to x=0.92 was simply achieved by changing the Al and Ga cell temperatures in no more than three steps per DBR period. Highly uniform DBR and VCSEL structures were demonstrated with a multi-wafer MBE system. Run-to-run standard deviation of reflectance spectrum center wavelength was 0.5% and 1.4% for VCSEL etalon wavelength.

47. VIEW TO WEST; SOUTH END OF MBE BUILDING, FIRST ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

47. VIEW TO WEST; SOUTH END OF MBE BUILDING, FIRST FLOOR; FORMER PACKAGE HANDLING AREA ADJACENT TO FORMER PACIFIC ELECTRIC RAILWAY TERMINAL (Andersen) - Los Angeles Union Passenger Terminal, Mail, Baggage, & Express Building, 800 North Alameda Street, Los Angeles, Los Angeles County, CA

Carrier concentration dependence of donor activation energy in n-type GaN epilayers grown on Si (1 1 1) by plasma-assisted MBE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Mahesh; Central Research Laboratory, Bharat Electronics, Bangalore 560 013; Bhat, Thirumaleshwara N.

Highlights: ► The n-type GaN layers were grown by plasma-assisted molecular beam epitaxy. ► The optical characteristics of a donor level in Si-doped GaN were studied. ► Activation energy of a Si-related donor was estimated from temperature dependent PL measurements. ► PL peak positions, FWHM of PL and activation energies are found to be proportional to the cube root of carrier density. ► The involvement of donor levels is supported by the temperature-dependent electron concentration measurements. -- Abstract: The n-type GaN layers were grown by plasma-assisted MBE and either intentionally doped with Si or unintentionally doped. The optical characteristics ofmore » a donor level in Si-doped, GaN were studied in terms of photoluminescence (PL) spectroscopy as a function of electron concentration. Temperature dependent PL measurements allowed us to estimate the activation energy of a Si-related donor from temperature-induced decay of PL intensity. PL peak positions, full width at half maximum of PL and activation energies are found to be proportional to the cube root of carrier density. The involvement of donor levels is supported by the temperature-dependent electron concentration measurements.« less

CdTe layer structures for X-ray and gamma-ray detection directly grown on the Medipix readout-chip by MBE

NASA Astrophysics Data System (ADS)

Vogt, A.; Schütt, S.; Frei, K.; Fiederle, M.

2017-11-01

This work investigates the potential of CdTe semiconducting layers used for radiation detection directly deposited on the Medipix readout-chip by MBE. Due to the high Z-number of CdTe and the low electron-hole pair creation energy a thin layer suffices for satisfying photon absorption. The deposition takes place in a modified MBE system enabling growth rates up to 10 μm/h while the UHV conditions allow the required high purity for detector applications. CdTe sensor layers deposited on silicon substrates show resistivities up to 5.8 × 108 Ω cm and a preferred (1 1 1) orientation. However, the resistivity increases with higher growth temperature and the orientation gets more random. Additionally, the deposition of a back contact layer sequence in one process simplifies the complex production of an efficient contact on CdTe with aligned work functions. UPS measurements verify a decrease of the work function of 0.62 eV induced by Te doping of the CdTe.

MBE HgCdTe for HDVIP Devices: Horizontal Integration in the US HgCdTe FPA Industry

NASA Astrophysics Data System (ADS)

Aqariden, F.; Elsworth, J.; Zhao, J.; Grein, C. H.; Sivananthan, S.

2012-10-01

Molecular beam epitaxy (MBE) growth of HgCdTe offers the possibility of fabricating multilayer device structures with an almost unlimited choice of infrared sensor designs for focal-plane array (FPA) fabrication. HgCdTe offers two major advantages that explain its dominance in the infrared photon detector marketplace. The thermal generation rate per unit volume of the material is lower and the quantum efficiency for photon absorption in the infrared is higher in HgCdTe than in any competing material—it yields devices with quantum efficiencies as high as 0.99. Recently, EPIR Technologies and DRS Infrared Technologies agreed to collaborate and examine: (i) the feasibility of employing MBE HgCdTe in the fabrication of high-density vertically interconnected photodiodes (HDVIPs), which are usually fabricated with liquid-phase epitaxy material, and (ii) the potential benefits of horizontal integration, with EPIR supplying the MBE materials to DRS for device and array fabrication. The team designed and developed passivation-absorber-passivation structures that are heavily used by DRS. This paper provides an overview of the characteristics of HDVIP devices and arrays fabricated from MBE HgCdTe and the anticipated advantages of horizontal integration in the industry. Material growth, device fabrication, and test results are presented.

All MBE grown InAs/GaAs quantum dot lasers on on-axis Si (001).

PubMed

Kwoen, Jinkwan; Jang, Bongyong; Lee, Joohang; Kageyama, Takeo; Watanabe, Katsuyuki; Arakawa, Yasuhiko

2018-04-30

Directly grown III-V quantum dot (QD) laser on on-axis Si (001) is a good candidate for achieving monolithically integrated Si photonics light source. Nowadays, laser structures containing high quality InAs / GaAs QD are generally grown by molecular beam epitaxy (MBE). However, the buffer layer between the on-axis Si (001) substrate and the laser structure are usually grown by metal-organic chemical vapor deposition (MOCVD). In this paper, we demonstrate all MBE grown high-quality InAs/GaAs QD lasers on on-axis Si (001) substrates without using patterning and intermediate layers of foreign material.

Arsenic-induced intensity oscillations in reflection high-energy electron diffraction measurements. [during MBE of GaAs and InAs

NASA Technical Reports Server (NTRS)

Lewis, B. F.; Fernandez, R.; Grunthaner, F. J.; Madhukar, A.

1986-01-01

A technique of arsenic-induced RHEED intensity oscillations has been used to accurately measure arsenic incorporation rates as a function of substrate temperature during the homoepitaxial growths of both GaAs and InAs by molecular beam epitaxy (MBE). Measurements were made at growth temperatures from 350 to 650 C and at arsenic fluxes of 0.1 to 10.0 monolayer/s. The method measures only the arsenic actually incorporated into the growing film and does not include the arsenic lost in splitting the arsenic tetramers or lost by evaporation from the sample.

LncRNA-uc002mbe.2 Interacting with hnRNPA2B1 Mediates AKT Deactivation and p21 Up-Regulation Induced by Trichostatin in Liver Cancer Cells.

PubMed

Chen, Ting; Gu, Chengxin; Xue, Cailin; Yang, Tao; Zhong, Yun; Liu, Shiming; Nie, Yuqiang; Yang, Hui

2017-01-01

Long non-coding RNAs (lncRNAs) have been implicated in liver carcinogenesis. We previously showed that the induction of lncRNA-uc002mbe.2 is positively associated with the apoptotic effect of trichostatin A (TSA) in hepatocellular carcinoma (HCC) cells. The current study further analyzed the role of uc002mbe.2 in TSA-induced liver cancer cell death. The level of uc002mbe.2 was markedly increased by TSA in the cytoplasm of HCC cells. Knockdown of uc002mbe.2 prohibited TSA-induced G2/M cell cycle arrest, p21 induction, and apoptosis of Huh7 cells and reversed the TSA-mediated decrease in p-AKT. RNA pull-down and RNA-binding protein immunoprecipitation (RIP) assays revealed that TSA induced an interaction between uc002mbe.2 and heterogeneous nuclear ribonucleoprotein A2B1 (hnRNPA2B1) in Huh7 cells. This interaction mediated AKT deactivation and p21 induction in liver cancer cells. In an athymic xenograft mouse model, knockdown of uc002mbe.2 significantly prohibited the TSA-mediated reduction in tumor size and weight. In addition, the ability of TSA to reduce hnRNPA2B1 and p-AKT levels and induce p21 in the xenograft tumors was prevented by uc002mbe.2 knockdown. Therefore, the interaction of uc002mbe.2 and hnRNPA2B1 in mediating AKT deactivation and p21 induction is involved in the cytostatic effect of trichostatin in liver cancer cells.

Photoluminescence Mapping and Angle-Resolved Photoluminescence of MBE-Grown InGaAs/GaAs RC LED and VCSEL Structures

DTIC Science & Technology

2002-06-03

resonant-cavity light-emitting diodes (RC LEDs) and vertical-cavity surface-emitting lasers ( VCSELs )] fabricated from molecular beam epitaxy (MBE)-grown...grown 8470-631. by molecular beam epitaxy (MBE) using a Riber 32P E-mail address: muszal@ite.waw.pl (0. Muszalski). reactor. Details of the growth can be... molecular beams hit the center of a rotating sion features of RC LED and VCSEL structures, as well sample. However, due to the transversal distribution of as

Ab initio-based approach to structural change of compound semiconductor surfaces during MBE growth

NASA Astrophysics Data System (ADS)

Ito, Tomonori; Akiyama, Toru; Nakamura, Kohji

2009-01-01

Phase diagrams of GaAs and GaN surfaces are systematically investigated by using our ab initio-based approach in conjunction with molecular beam epitaxy (MBE). The phase diagrams are obtained as a function of growth parameters such as temperature and beam equivalent pressure (BEP). The versatility of our approach is exemplified by the phase diagram calculations for GaAs(0 0 1) surfaces, where the stable phases and those phase boundaries are successfully determined as functions of temperature and As 2 and As 4 BEPs. The initial growth processes are clarified by the phase diagram calculations for GaAs(1 1 1)B-(2×2). The calculated results demonstrate that the As-trimer desorption on the GaAs(1 1 1)B-(2×2) with Ga adatoms occurs beyond 500-700 K while the desorption without Ga adatoms does beyond 800-1000 K. This self-surfactant effect induced by Ga adsorption crucially affects the initial growth of GaAs on the GaAs(1 1 1)B-(2×2). Furthermore, the phase diagram calculations for GaN(0 0 0 1) suggests that Ga adsorption or desorption during GaN MBE growth can easily change the pseudo-(1×1) to the (2×2)-Ga via newly found (1×1) and vice versa. On the basis of this finding, the possibility of ghost island formation during MBE growth is discussed.

Single- and two-color infrared focal plane arrays made by MBE in HgCdTe

NASA Astrophysics Data System (ADS)

Zanatta, Jean-Paul; Ferret, P.; Loyer, R.; Petroz, G.; Cremer, S.; Chamonal, Jean-Paul; Bouchut, Philippe; Million, Alain; Destefanis, Gerard L.

2000-12-01

We present here recent developments obtained at LETI infrared laboratory in the field of infrared detectors made in HgCdTe material and using the molecular beam epitaxial growth technique (MBE). We discuss the metallurgical points (growth temperature and flux control) that lead to achieve excellent quality epitaxial layers grown by MBE. We show a run-to-run reproducibility measured on growth run of more than 15 layers. The crystalline quality, surface morphology, and composition uniformity are excellent. The etch pits density (EPD) are in the low 105.cm-2 when HgCdTe grows on a CdZnTe substrate. Transport properties reveal a low n-type carrier concentration in the 1014 to 1015.cm-3 range with a carrier mobility in excess of 105 cm2/V/sec at 77K for epilayers grown with 10 micrometers cutoff wavelength. We describe the performances of several kinds of our HgCdTe- MBE devices: single color MWIR and LWIR detectors on HgCdTe/CdZnTe operating at 77K in respectively (3-5 micrometers ) and (8-12 micrometers ) wavelength range; single color MWIR detectors on HgCdTe grown on germanium heterosubstrate operating at 77K in the (3-5 micrometers ) wavelength range; two color HgCdTe detectors operating within the MWIR (3-5 micrometers ) band.

MBE growth of Topological Isolators based on strained semi-metallic HgCdTe layers

NASA Astrophysics Data System (ADS)

Grendysa, J.; Tomaka, G.; Sliz, P.; Becker, C. R.; Trzyna, M.; Wojnarowska-Nowak, R.; Bobko, E.; Sheregii, E. M.

2017-12-01

Particularities of Molecular Beam Epitaxial (MBE) technology for the growth of Topological Insulators (TI) based on the semi-metal Hg1-xCdx Te are presented. A series of strained layers grown on GaAs substrates with a composition close to the 3D Dirac point were studied. The composition of the layers was verified by means of the position of the E1 maximum in optical reflectivity in the visible region. The surface morphology was determined via atomic force and electron microscopy. Magneto-transport measurements show quantized Hall resistance curves and Shubnikov de Hass oscillations (up to 50 K). It has been demonstrated that a well-developed MBE technology enables one to grow strained Hg1-xCdx Te layers on GaAs/CdTe substrates with a well-defined composition near the 3D Dirac point and consequently allows one to produce a 3D topological Dirac semimetal - 3D analogy of graphene - for future applications.

MBE growth of VCSELs for high volume applications

NASA Astrophysics Data System (ADS)

Jäger, Roland; Riedl, Michael C.

2011-05-01

Mass market applications like laser computer mouse or optical data transmission based on vertical-cavity surface-emitting laser (VCSEL) chips need a high over all yield including epitaxy, processing, dicing, mounting and testing. One yield limitation for VCSEL structures is the emission wavelength variation of the substrate surface area leading to the fraction on laser chips which are below or above the specification limits. For most 850 nm VCSEL products a resonator wavelength variation of ±2 nm is common. This represents an average resonator thickness variation of much less than 1% which is quite challenging to be fulfilled on the entire processed wafer surface area. A high over all yield is demonstrated on MBE grown VCSEL structures.

MBE Growth of Ferromagnetic Metal/Compound Semiconductor Heterostructures for Spintronics

ScienceCinema

Palmstrom, Chris [University of California, Santa Barbara, California, United States

2017-12-09

Electrical transport and spin-dependent transport across ferromagnet/semiconductor contacts is crucial in the realization of spintronic devices. Interfacial reactions, the formation of non-magnetic interlayers, and conductivity mismatch have been attributed to low spin injection efficiency. MBE has been used to grow epitaxial ferromagnetic metal/GA(1-x)AL(x)As heterostructures with the aim of controlling the interfacial structural, electronic, and magnetic properties. In situ, STM, XPS, RHEED and LEED, and ex situ XRD, RBS, TEM, magnetotransport, and magnetic characterization have been used to develop ferromagnetic elemental and metallic compound/compound semiconductor tunneling contacts for spin injection. The efficiency of the spin polarized current injected from the ferromagnetic contact has been determined by measuring the electroluminescence polarization of the light emitted from/GA(1-x)AL(x)As light-emitting diodes as a function of applied magnetic field and temperature. Interfacial reactions during MBE growth and post-growth anneal, as well as the semiconductor device band structure, were found to have a dramatic influence on the measured spin injection, including sign reversal. Lateral spin-transport devices with epitaxial ferromagnetic metal source and drain tunnel barrier contacts have been fabricated with the demonstration of electrical detection and the bias dependence of spin-polarized electron injection and accumulation at the contacts. This talk emphasizes the progress and achievements in the epitaxial growth of a number of ferromagnetic compounds/III-V semiconductor heterostructures and the progress towards spintronic devices.

Electronic, structural and chemical properties of GaAs/ZnSe heterovalent interfaces as dependent on MBE growth conditions and ex situ annealing

NASA Astrophysics Data System (ADS)

Komissarova, T. A.; Lebedev, M. V.; Sorokin, S. V.; Klimko, G. V.; Sedova, I. V.; Gronin, S. V.; Komissarov, K. A.; Calvet, W.; Drozdov, M. N.; Ivanov, S. V.

2017-04-01

A study of electronic, structural and chemical properties of GaAs/ZnSe heterovalent interfaces (HI) in dependence on molecular beam epitaxy (MBE) growth conditions and post-growth annealing was performed. Initial GaAs surface reconstructions ((2 × 4)As or c(4 × 4)As) and ZnSe growth mode (MBE or migration-enhanced epitaxy (MEE)) were varied for different undoped and n-doped heterovalent structures. Although all the structures have low extended defect density (less than 106 cm-2) and rather small (less than 5 nm) atomic interdiffusion at the HI, the structural, chemical and electronic properties of the near-interface area (short-distance interdiffusion effects, dominant chemical bonds, and valence band offset values) as well as electrical properties of the n-GaAs/n-ZnSe heterovalent structures were found to be influenced strongly by the MBE growth conditions and post-growth annealing.

MBE growth of nitride-arsenides for long wavelength opto-electronics

NASA Astrophysics Data System (ADS)

Spruytte, Sylvia Gabrielle

2001-07-01

Until recently, the operating wavelength of opto-electronic devices on GaAs has been limited to below 1 mum due to the lack of III-V materials with close lattice match to GaAs that have a bandgap below 1.24 eV. To enable devices operating at 1.3 mum on GaAs, MBE growth of a new III-V material formed by adding small amounts of nitrogen to InGaAs was developed. The growth of group III-nitride-arsenides (GaInNAs) is complicated by the divergent properties of the alloy constituents and the difficulty of generating a reactive nitrogen species. Nitride-arsenide materials are grown by molecular beam epitaxy (MBE) using a radio frequency (rf) nitrogen plasma source. The plasma conditions that maximize the amount of atomic nitrogen versus molecular nitrogen are determined using the emission spectrum of the plasma. To avoid phase segregation, nitride-arsenides must be grown at relatively low temperatures and high arsenic overpressures. It is shown that the group III growth rate controls the nitrogen concentration in the film. Absorption measurements allow the establishment of a range of GaInNAs alloys yielding 1.3 mum emission. The optical properties of GaInNAs and GaNAs quantum wells (QWs) are investigated with photoluminescence (PL) measurements. The peak PL intensity increases and peak wavelength shifts to shorter wavelengths when annealing. The increase in luminescence efficiency results from a decrease in non-radiative recombination centers. As the impurity concentration in the GaInNAs films is low, crystal defects associated with nitrogen incorporation were investigated and improvements in crystal quality after anneal were observed. Nuclear reaction channeling measurements show that as-grown nitride-arsenides contain a considerable amount of interstitial nitrogen and that a substantial fraction of the non-substitutional nitrogen disappears during anneal. Secondary ion mass spectroscopy depth profiling on GaInNAs quantum wells shows that during anneal, the nitrogen

Life on the edge: squirrel-cage fringe fields and their effects in the MBE-4 combiner experiment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fawley, W.M.

1996-02-01

The MBE-4 combiner experiment employs an electrostatic combined-function focusing/bending element, the so-called ``squirrel-cage`` just before the actual merging region. There has been concern that non-linear fields, primarily in the fringe regions at the beginning and end of the cage, may be strong enough to lead to significant emittance degradation. This note present the results of numerical calculations which determined the anharmonic, non-linear components of the 3D fields in the cage and the resultant, orbit-integrated effects upon the MBE-4 beamlets. We find that while the anharmonic effects are small compared to the dipole deflection, the resultant transverse emittance growth is significantmore » when compared to the expected value of the initial emittance of the individual beamlets.« less

Thermal stability of MBE-grown epitaxial MoSe2 and WSe2 thin films

NASA Astrophysics Data System (ADS)

Chang, Young Jun; Choy, Byoung Ki; Phark, Soo-Hyon; Kim, Minu

Layered transition metal dichalcogenides (TMDs) draw much attention, because of its unique optical properties and band structures depending on the layer thicknesses. However, MBE growth of epitaxial films demands information about thermal stability of stoichiometry and related electronic structure for high temperature range. We grow epitaxial MoSe2 and WSe2 ultrathin films by using molecular beam epitaxy (MBE). We characterize stoichiometry of films grown at various growth temperature by using various methods, XPS, EDX, and TOF-MEIS. We further test high temperature stability of electronic structure for those films by utilizing in-situ ellipsometry attached to UHV chamber. We discuss threshold temperatures up to 700~1000oC, at which electronic phases changes from semiconductor to metal due to selenium deficiency. This information can be useful for potential application of TMDs for fabrication of Van der Waals multilayers and related devices. This research was supported by Nano.Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning. (2009-0082580), NRF-2014R1A1A1002868.

Growth of III-V films by control of MBE growth front stoichiometry

NASA Technical Reports Server (NTRS)

Grunthaner, Frank J. (Inventor); Liu, John K. (Inventor); Hancock, Bruce R. (Inventor)

1992-01-01

For the growth of strain-layer materials and high quality single and multiple quantum wells, the instantaneous control of growth front stoichiometry is critical. The process of the invention adjusts the offset or phase of molecular beam epitaxy (MBE) control shutters to program the instantaneous arrival or flux rate of In and As4 reactants to grow InAs. The interrupted growth of first In, then As4, is also a key feature.

Influence of MBE growth modes and conditions on spontaneous formation of metallic In nanoparticles and electrical properties of InN matrix

NASA Astrophysics Data System (ADS)

Komissarova, T. A.; Wang, P.; Paturi, P.; Wang, X.; Ivanov, S. V.

2017-11-01

Influence of the molecular beam epitaxy (MBE) growth conditions on the electrical properties of the InN epilayers in terms of minimization of the effect of spontaneously formed In nanoparticles was studied. A three-step growth sequence was used, including direct MBE growth of an InN nucleation layer, migration enhanced epitaxy (MEE) of an InN buffer layer, and In-rich MBE growth of the main InN layer, utilizing the droplet elimination by radical-beam irradiation (DERI) technique. The three-step growth regime was found to lead to decreasing the relative amount of In nanoparticles to 4.8% and 3.8% in In-rich and near-stoichiometric conditions, respectively, whereas the transport properties are better for the In-rich growth. Further reduction of the metallic indium inclusions in the InN films, while keeping simultaneously satisfactory transport parameters, is hardly possible due to fundamental processes of InN thermal decomposition and formation of the nitrogen vacancy conglomerates in the InN matrix. The In inclusions are shown to dominate the electrical conductivity of the InN films even at their minimum amount.

LPE growth of crack-free PbSe layers on Si(100) using MBE-Grown PbSe/BaF2CaF2 buffer layers

NASA Astrophysics Data System (ADS)

Strecker, B. N.; McCann, P. J.; Fang, X. M.; Hauenstein, R. J.; O'Steen, M.; Johnson, M. B.

1997-05-01

Crack-free PbSe on (100)-oriented Si has been obtained by a combination of liquid phase epitaxy (LPE) and molecular beam epitaxy (MBE) techniques. MBE is employed first to grow a PbSe/BaF2/CaF2 buffer structure on the (100)-oriented Si. A 2.5 μm thick PbSe layer is then grown by LPE. The LPE-grown PbSe displays excellent surface morphology and is continuous over the entire 8×8 mm2 area of growth. This result is surprising because of the large mismatch in thermal expansion coefficients between PbSe and Si. Previous attempts to grow crack-free PbSe by MBE alone using similar buffer structures on (100)-oriented Si have been unsuccessful. It is speculated that the large concentration of Se vacancies in the LPE-grown PbSe layer may allow dislocation climb along higher order slip planes, providing strain relaxation.

Investigations of Optical Properties of Active Regions in Vertical Cavity Surface Emitting Lasers Grown by MBE

DTIC Science & Technology

2002-06-03

Molecular beam epitaxy ; Planar microcavities; Vertical cavity surface emitting lasers 1... Vertical Cavity Surface Emitting Lasers Grown by MBE DISTRIBUTION: Approved for public release, distribution unlimited This paper is part of the...S-581 83 Linkiping, Sweden Abstract The design of the vertical cavity surface emitting lasers ( VCSELs ) needs proper tuning of many

Photoluminescence and Band Alignment of Strained GaAsSb/GaAs QW Structures Grown by MBE on GaAs

PubMed Central

Sadofyev, Yuri G.; Samal, Nigamananda

2010-01-01

An in-depth optimization of growth conditions and investigation of optical properties including discussions on band alignment of GaAsSb/GaAs quantum well (QW) on GaAs by molecular beam epitaxy (MBE) are reported. Optimal MBE growth temperature of GaAsSb QW is found to be 470 ± 10 °C. GaAsSb/GaAs QW with Sb content ~0.36 has a weak type-II band alignment with valence band offset ratio QV ~1.06. A full width at half maximum (FWHM) of ~60 meV in room temperature (RT) photoluminescence (PL) indicates fluctuation in electrostatic potential to be less than 20 meV. Samples grown under optimal conditions do not exhibit any blue shift of peak in RT PL spectra under varying excitation.

MBE growth and processing of III/V-nitride semiconductor thin film structures: Growth of gallium indium arsenic nitride and nano-machining with focused ion beam and electron beam

NASA Astrophysics Data System (ADS)

Park, Yeonjoon

The advanced semiconductor material InGaAsN was grown with nitrogen plasma assisted Molecular Beam Epitaxy (MBE). The InGaAsN layers were characterized with High Resolution X-ray Diffraction (HRXDF), Atomic Fore Microscope (AFM), X-ray Photoemission Spectroscopy (XPS) and Photo-Luminescence (PL). The reduction of the band gap energy was observed with the incorporation of nitrogen and the lattice matched condition to the GaAs substrate was achieved with the additional incorporation of indium. A detailed investigation was made for the growth mode changes from planar layer-by-layer growth to 3D faceted growth with a higher concentration of nitrogen. A new X-ray diffraction analysis was developed and applied to the MBE growth on GaAs(111)B, which is one of the facet planes of InGaAsN. As an effort to enhance the processing tools for advanced semiconductor materials, gas assisted Focused Ion Beam (FIB) vertical milling was performed on GaN. The FIB processed area shows an atomically flat surface, which is good enough for the fabrication of Double Bragg Reflector (DBR) mirrors for the Blue GaN Vertical Cavity Surface Emitting Laser (VCSEL) Diodes. An in-situ electron beam system was developed to combine the enhanced lithographic processing capability with the atomic layer growth capability by MBE. The electron beam system has a compensation capability against substrate vibration and thermal drift. In-situ electron beam lithography was performed with the low pressure assisting gas. The advanced processing and characterization methods developed in this thesis will assist the development of superior semiconductor materials for the future.

A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD.

PubMed

Wang, Wenliang; Wang, Haiyan; Yang, Weijia; Zhu, Yunnong; Li, Guoqiang

2016-04-22

High-quality GaN epitaxial films have been grown on Si substrates with Al buffer layer by the combination of molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) technologies. MBE is used to grow Al buffer layer at first, and then PLD is deployed to grow GaN epitaxial films on the Al buffer layer. The surface morphology, crystalline quality, and interfacial property of as-grown GaN epitaxial films on Si substrates are studied systematically. The as-grown ~300 nm-thick GaN epitaxial films grown at 850 °C with ~30 nm-thick Al buffer layer on Si substrates show high crystalline quality with the full-width at half-maximum (FWHM) for GaN(0002) and GaN(102) X-ray rocking curves of 0.45° and 0.61°, respectively; very flat GaN surface with the root-mean-square surface roughness of 2.5 nm; as well as the sharp and abrupt GaN/AlGaN/Al/Si hetero-interfaces. Furthermore, the corresponding growth mechanism of GaN epitaxial films grown on Si substrates with Al buffer layer by the combination of MBE and PLD is hence studied in depth. This work provides a novel and simple approach for the epitaxial growth of high-quality GaN epitaxial films on Si substrates.

Self-organized MBE growth of II VI epilayers on patterned GaSb substrates

NASA Astrophysics Data System (ADS)

Wissmann, H.; Tran Anh, T.; Rogaschewski, S.; von Ortenberg, M.

1999-05-01

We report on the self-organized MBE growth of II-VI epilayers on patterned and unpatterned GaSb substrates resulting in quantum wires and quantum wells, respectively. The HgSe : Fe quantum wires were grown on (0 0 1)GaSb substrates with a buffer of lattice-matched ZnTe 1- xSe x. Due to the anisotropic growth of HgSe on the A-oriented stripes roof-like overgrowth with a definite ridge was obtained. Additional Fe doping in the direct vicinity of the ridge results in a highly conductive quantum wire.

Electrical properties of surface and interface layers of the N- and In-polar undoped and Mg-doped InN layers grown by PA MBE

NASA Astrophysics Data System (ADS)

Komissarova, T. A.; Kampert, E.; Law, J.; Jmerik, V. N.; Paturi, P.; Wang, X.; Yoshikawa, A.; Ivanov, S. V.

2018-01-01

Electrical properties of N-polar undoped and Mg-doped InN layers and In-polar undoped InN layers grown by plasma-assisted molecular beam epitaxy (PA MBE) were studied. Transport parameters of the surface and interface layers were determined from the measurements of the Hall coefficient and resistivity as well as the Shubnikov-de Haas oscillations at magnetic fields up to 60 T. Contributions of the 2D surface, 3D near-interface, and 2D interface layers to the total conductivity of the InN films were defined and discussed to be dependent on InN surface polarity, Mg doping, and PA MBE growth conditions.

Uniformity of dc and rf performance of MBE-grown AlGaN/GaN HEMTS on HVPE-grown buffers

NASA Astrophysics Data System (ADS)

Gillespie, J. K.; Fitch, R. C.; Moser, N.; Jenkins, T.; Sewell, J.; Via, D.; Crespo, A.; Dabiran, A. M.; Chow, P. P.; Osinsky, A.; Mastro, M. A.; Tsvetkov, D.; Soukhoveev, V.; Usikov, A.; Dmitriev, V.; Luo, B.; Pearton, S. J.; Ren, F.

2003-10-01

AlGaN/GaN high electron mobility transistors (HEMTs) were grown by molecular beam epitaxy (MBE) on 2 in. diameter GaN buffer layers grown by hydride vapor epitaxy (HVPE) on sapphire substrates. HEMTs with 1 μm gate length displayed excellent dc and rf performance uniformity with up to 258 separate devices measured for each parameter. The drain-source saturation current was 561 mA with a standard deviation of 1.9% over the 2 in. diameter, with a corresponding transconductance of 118 ± 3.9 mS/mm. The threshold voltage was -5.3 ± 0.07 V. The rf performance uniformity was equally good, with an fT of 8.6 ± 0.8 GHz and fmax of 12.8 ± 2.5 GHz. The results show the excellent uniformity of the MBE technique for producing AlGaN/GaN HEMTs and also the ability of HVPE to provide high quality buffers at low cost.

Plasma-assisted MBE growth kinetics and characterization studies of wide bandgap III-V epitaxial materials

NASA Astrophysics Data System (ADS)

O'Steen, Mark Lee

2000-10-01

Scope and method of study. The purpose of this research was to understand the physics of RF plasma-assisted molecular beam epitaxial growth of GaN epitaxial films and InGaN/GaN superlattice structures grown on Al2O3 (0001) substrates. The techniques used to characterize the RF-MBE grown samples include in situ reflection high energy electron diffraction (RHEED) and optical pyrometry, and ex situ spatially-resolved high resolution X-ray diffraction, spatially-resolved reflectance spectroscopy, atomic force microscopy, and low-temperature photoluminescence (PL) spectroscopy. Findings and conclusions. RF plasma-assisted molecular beam epitaxy (RF-MBE) has been used to grow GaN epitaxial films and InGaN/GaN superlattice structures. The most important growth parameters in the growth of GaN epitaxial films were identified as the substrate temperature, incident N*/Ga flux ratio, and GaN growth rate. The effect of these growth parameters on GaN growth and quality of GaN epitaxial films is discussed. Additionally, an interpretation of the effects of growth conditions on the underlying microscopic growth processes occurring is presented. All of the observed GaN growth results may be understood in terms of these microscopic growth processes. InGaN/GaN superlattice samples are grown to identify and quantitatively access the InGaN growth phenomenology. It is inferred that InN requires a higher N*/III flux ratio than does GaN for stoichiometric growth. At substrate temperatures below 590°C, the In composition of the superlattice samples is nominally constant. However, in the narrow temperature range 590--670°C, the In composition decreases by more than an order-or-magnitude at the lowest N*/III flux ratio of this study. Additionally, the incident N*/III flux ratio is found to strongly influence the In composition as well. Nearly an order-of-magnitude increase in In composition is observed despite only a 20% increase in the N*/III flux ratio at the highest temperature of this

Influence of Growth Parameters and Annealing on Properties of MBE Grown GaAsSbN SQWs

NASA Technical Reports Server (NTRS)

Wu, Liangjin; Iyer, Shanthi; Nunna, Kalyan; Bharatan, Sudhakar; Li, Jia; Collis, Ward J.

2005-01-01

In this paper we report the growth of GaAsSbN/GaAs single quantum well (SQW) heterostructures by molecular beam epitaxy (MBE) and their properties. A systematic study has been carried out to determine the effect of growth conditions, such as the source shutter opening sequence and substrate temperature, on the structural and optical properties of the layers. The substrate temperatures in the range of 450-470 C were found to be optimal. Simultaneous opening of the source shutters (SS) resulted in N incorporation almost independent of substrate temperature and Sb incorporation higher at lower substrate temperatures. The effects of ex-situ annealing in nitrogen ambient and in-situ annealing under As ovepressure on the optical properties of the layers have also been investigated. A significant increase in photoluminescence (PL) intensity with reduced full width at half maxima (FWHM) in conjunction with a blue shift in the emission energy was observed on 10 annealing the samples. In in-situ annealed samples, the PL line shapes were more symmetric and the temperature dependence of the PL peak energy indicated significant decrease in the exciton localization energy as exhibited by a less pronounced S-shaped curve. The inverted S-shaped curve observed in the temperature dependence of PL FWHM is also discussed. 1.61 micrometer emission with FWHM of 25 meV at 20K has been obtained in in-situ annealed GaAsSbN/GaAs SQW grown at 470 C by SS.

Site-controlled GaN nanocolumns with InGaN insertions grown by MBE

NASA Astrophysics Data System (ADS)

Nechaev, D. V.; Semenov, A. N.; Koshelev, O. A.; Jmerik, V. N.; Davydov, V. Yu; Smirnov, A. N.; Pozina, G.; Shubina, T. V.; Ivanov, S. V.

2017-11-01

The site-controlled plasma-assisted molecular beam epitaxy (PA MBE) has been developed to fabricate the regular array of GaN nanocolumns (NCs) with InGaN insertions on micro-cone patterned sapphire substrates (μ-CPSSs). Two-stage growth of GaN NCs, including a nucleation layer grown at metal-rich conditions and high temperature GaN growth in strong N-rich condition, has been developed to achieve the selective growth of the NCs. Microcathodoluminescence measurements have demonstrated pronounced emission from the InGaN insertions in 450-600 nm spectral range. The optically isolated NCs can be used as effective nano-emitters operating in the visible range.

Scanning tunneling spectroscopic (STS) studies of magnetically doped MBE-grown topological insulators (TIs)

NASA Astrophysics Data System (ADS)

Chu, Hao; Teague, Marcus; Chen, Chien-Chang; Woodward, Nicholas; Yeh, Nai-Chang; Kou, Xufeng; He, Liang; Lang, Murong; Wang, Kang; Caltech Collaboration; UCLA Collaboration

2013-03-01

We conduct STS studies on MBE-grown heterostructures of non-magnetic TI (Bi2Se3) with a range of thicknesses (d = 1, 3, 5, 7 quintuple layers, QL) on top of 7-QL magnetically doped TI (Cr-doped Bi2Se3) . For d = 1 and 3-QL, a spatially homogeneous magnetism-induced surface gap (as large as about 150 meV for d = 1-QL) is observed at 77 K, whereas gapless Dirac spectra are found for d = 5 and 7-QL, suggesting that the effective magnetic length for Cr-doped Bi2Se3 is approximately 4 ~ 5-QL. These findings are further corroborated by ARPES and bulk electrical transport measurements. The magnetism-induced surface gap differs from those found in pure Bi2Se3 and (Bi0.5Sb0.5)2 Te3 films of thicknesses smaller than 6-QL, because the latter are due to overlaps of wave functions between the surface and interface layers, which lead to Rashba-like spin-orbit splitting and spin-preserving quasiparticle interference wave-vectors. In contrast, STS studies of TIs with magnetism-induced surface gap do not yield any quasiparticle interferences for energies within the bulk Bi2Se3 gap. Finally, comparative STS studies of pure and magnetically doped TIs in high magnetic fields will be discussed. This work was supported by DARPA.

Effect of BST film thickness on the performance of tunable interdigital capacitors grown by MBE

NASA Astrophysics Data System (ADS)

Meyers, Cedric J. G.; Freeze, Christopher R.; Stemmer, Susanne; York, Robert A.

2017-12-01

Voltage-tunable, interdigital capacitors (IDCs) were fabricated on Ba0.29Sr0.71TiO3 grown by hybrid molecular beam epitaxy (MBE). In this growth technique, we utilize the metal-organic precursor titanium tetraisopropoxide rather than solid-source Ti as with conventional MBE. Two samples of varying BaxSr(1-x)TiO3 (BST) thicknesses were fabricated and analyzed. High-quality, epitaxial Pt electrodes were deposited by sputtering from a high-purity Pt target at 825 °C. The Pt electrodes were patterned and etched by argon ion milling, passivated with reactively sputtered SiO2, and then metallized with lift-off Ti/Au. The fabricated devices consisted of two-port IDCs embedded in ground-signal-ground, coplanar waveguide (CPW) transmission lines to enable radio-frequency (RF) probing. The sample included open and thru de-embedding structures to remove pad and CPW parasitic impedances. Two-port RF scattering (S) parameters were measured from 100 MHz to 40 GHz while DC bias was stepped from 0 V to 100 V. The IDCs exhibit a high zero-bias radio-frequency (RF) quality factor (Q) approaching 200 at 1 GHz and better than 2.3:1 capacitance tuning for the 300-nm-thick sample. Differences in the Q(V) and C(V) response with varying thicknesses indicate that unknown higher order material phenomena are contributing to the loss and tuning characteristics of the material.

Group III-nitride thin films grown using MBE and bismuth

DOEpatents

Kisielowski, Christian K.; Rubin, Michael

2002-01-01

The present invention comprises growing gallium nitride films in the presence of bismuth using MBE at temperatures of about 1000 K or less. The present invention further comprises the gallium nitride films fabricated using the inventive fabrication method. The inventive films may be doped with magnesium or other dopants. The gallium nitride films were grown on sapphire substrates using a hollow anode Constricted Glow Discharge nitrogen plasma source. When bismuth was used as a surfactant, two-dimensional gallium nitride crystal sizes ranging between 10 .mu.m and 20 .mu.m were observed. This is 20 to 40 times larger than crystal sizes observed when GaN films were grown under similar circumstances but without bismuth. It is thought that the observed increase in crystal size is due bismuth inducing an increased surface diffusion coefficient for gallium. The calculated value of 4.7.times.10.sup.-7 cm.sup.2 /sec. reveals a virtual substrate temperature of 1258 K which is 260 degrees higher than the actual one.

Group III-nitride thin films grown using MBE and bismuth

DOEpatents

Kisielowski, Christian K.; Rubin, Michael

2000-01-01

The present invention comprises growing gallium nitride films in the presence of bismuth using MBE at temperatures of about 1000 K or less. The present invention further comprises the gallium nitride films fabricated using the inventive fabrication method. The inventive films may be doped with magnesium or other dopants. The gallium nitride films were grown on sapphire substrates using a hollow anode Constricted Glow Discharge nitrogen plasma source. When bismuth was used as a surfactant, two-dimensional gallium nitride crystal sizes ranging between 10 .mu.m and 20 .mu.m were observed. This is 20 to 40 times larger than crystal sizes observed when GaN films were grown under similar circumstances but without bismuth. It is thought that the observed increase in crystal size is due bismuth inducing an increased surface diffusion coefficient for gallium. The calculated value of 4.7.times.10.sup.-7 cm.sup.2 /sec. reveals a virtual substrate temperature of 1258 K which is 260 degrees higher than the actual one.

Homoepitaxial n-core: p-shell gallium nitride nanowires: HVPE overgrowth on MBE nanowires.

PubMed

Sanders, Aric; Blanchard, Paul; Bertness, Kris; Brubaker, Matthew; Dodson, Christopher; Harvey, Todd; Herrero, Andrew; Rourke, Devin; Schlager, John; Sanford, Norman; Chiaramonti, Ann N; Davydov, Albert; Motayed, Abhishek; Tsvetkov, Denis

2011-11-18

We present the homoepitaxial growth of p-type, magnesium doped gallium nitride shells by use of halide vapor phase epitaxy (HVPE) on n-type gallium nitride nanowires grown by plasma-assisted molecular beam epitaxy (MBE). Scanning electron microscopy shows clear dopant contrast between the core and shell of the nanowire. The growth of magnesium doped nanowire shells shows little or no effect on the lattice parameters of the underlying nanowires, as measured by x-ray diffraction (XRD). Photoluminescence measurements of the nanowires show the appearance of sub-bandgap features in the blue and the ultraviolet, indicating the presence of acceptors. Finally, electrical measurements confirm the presence of electrically active holes in the nanowires.

Electron-beam pumped laser structures based on MBE grown {ZnCdSe}/{ZnSe} superlattices

NASA Astrophysics Data System (ADS)

Kozlovsky, V. I.; Shcherbakov, E. A.; Dianov, E. M.; Krysa, A. B.; Nasibov, A. S.; Trubenko, P. A.

1996-02-01

Cathodoluminescence (CL), photoreflection (PR), phototransmission (PT) of single and multiquantum wells (MQWs) and strain layer {ZnCdSe}/{ZnSe} superlattices (SLs) grown by molecular beam epitaxy (MBE) were studied. An increase of the Stokes shift with the number of quantum wells (QWs) and the appearance of new lines in CL and PT spectra were observed. Room temperature (RT) vertical-cavity surface-emitting laser (VCSEL) operation was achieved by using the SL structures. Output power up to 2.2 W in single longitudinal mode with λ = 493 nm was obtained. Cut facet laser wavelength of the same SL structure was 502 nm.

Possibilities for LWIR detectors using MBE-grown Si(/Si(1-x)Ge(x) structures

NASA Technical Reports Server (NTRS)

Hauenstein, Robert J.; Miles, Richard H.; Young, Mary H.

1990-01-01

Traditionally, long wavelength infrared (LWIR) detection in Si-based structures has involved either extrinsic Si or Si/metal Schottky barrier devices. Molecular beam epitaxially (MBE) grown Si and Si/Si(1-x)Ge(x) heterostructures offer new possibilities for LWIR detection, including sensors based on intersubband transitions as well as improved conventional devices. The improvement in doping profile control of MBE in comparison with conventional chemical vapor deposited (CVD) Si films has resulted in the successful growth of extrinsic Si:Ga, blocked impurity-band conduction detectors. These structures exhibit a highly abrupt step change in dopant profile between detecting and blocking layers which is extremely difficult or impossible to achieve through conventional epitaxial growth techniques. Through alloying Si with Ge, Schottky barrier infrared detectors are possible, with barrier height values between those involving pure Si or Ge semiconducting materials alone. For both n-type and p-type structures, strain effects can split the band edges, thereby splitting the Schottky threshold and altering the spectral response. Measurements of photoresponse of n-type Au/Si(1-x)Ge(x) Schottky barriers demonstrate this effect. For intersubband multiquntum well (MQW) LWIR detection, Si(1-x)Ge(x)/Si detectors grown on Si substrates promise comparable absorption coefficients to that of the Ga(Al)As system while in addition offering the fundamental advantage of response to normally incident light as well as the practical advantage of Si-compatibility. Researchers grew Si(1-x)Ge(x)/Si MQW structures aimed at sensitivity to IR in the 8 to 12 micron region and longer, guided by recent theoretical work. Preliminary measurements of n- and p-type Si(1-x)Ge(x)/Si MQW structures are given.

Optimization of the Nonradiative Lifetime of Molecular-Beam-Epitaxy (MBE)-Grown Undoped GaAs/AlGaAs Double Heterostructures (DH)

DTIC Science & Technology

2013-09-01

Optimization of the Nonradiative Lifetime of Molecular- Beam-Epitaxy (MBE)-Grown Undoped GaAs/AlGaAs Double Heterostructures (DH) by P...it to the originator. Army Research Laboratory Adelphi, MD 20783-1197 ARL-TR-6660 September 2013 Optimization of the Nonradiative ...REPORT TYPE Final 3. DATES COVERED (From - To) FY2013 4. TITLE AND SUBTITLE Optimization of the Nonradiative Lifetime of Molecular-Beam-Epitaxy

Structural and electrical investigations of MBE-grown SiGe nanoislands

NASA Astrophysics Data System (ADS)

Şeker, İsa; Karatutlu, Ali; Gürbüz, Osman; Yanık, Serhat; Bakış, Yakup; Karakız, Mehmet

2018-01-01

SiGe nanoislands were grown by Molecular Beam Epitaxy (MBE) method on Si (100) substrates with comparative growth parameters such as annealing temperature, top Ge content and layer-by-layer annealing (LBLA). XRD and Raman data suggest that annealing temperature, top Ge content and layer-by-layer annealing (LBLA) can overall give a control not only over the amorphous content but also over yielding the strained Ge layer formation in addition to mostly Ge crystallites. Depending on the layer design and growth conditions, size of the crystallites was observed to be changed. Four Point Probe (FPP) Method via Semiconductor Analyzer shows that 100 °C rise in annealing temperature of the samples with Si0.25Ge0.75 top layers caused rougher islands with vacancies which further resulted in the formation of laterally higher resistive thin film sheets. However, vertically performed I-AFM analysis produced higher I-V values which suggest that the vertical and horizantal conductance mechanisms appear to be different. Ge top-layered samples gained greater crystalline structure and better surface conductivity where LBLA resulted in the formation of Ge nucleation and tight 2D stacking resulting in enhanced current values.

Luminescence studies of laser MBE grown GaN on ZnO nanostructures

NASA Astrophysics Data System (ADS)

Dewan, Sheetal; Tomar, Monika; Kapoor, Ashok K.; Tandon, R. P.; Gupta, Vinay

2017-08-01

GaN films have been successfully fabricated using Laser Molecular Beam Epitaxy (LMBE) technique on bare c-plane sapphire substrate and ZnO nanostructures (NS) decorated Si (100) substrates. The ZnO nanostructures were grown on Si (100) substrate using high pressure assisted Pulsed laser deposition technique in inert gas ambience. Discrete nanostructured morphology of ZnO was obtained using the PLD growth on Si substrates. Photoluminescence studies performed on the prepared GaN/Sapphire and GaN/ZnO-NS/Si systems, revealed a significant PL enhancement in case of GaN/ZnO-NS/Si system compared to the former. The hexagonal nucleation sites provided by the ZnO nanostructures strategically enhanced the emission of GaN film grown by Laser MBE Technique at relatively lower temperature of 700°C. The obtained results are attractive for the realization of highly luminescent GaN films on Si substrate for photonic devices.

Ion-beam doping of GaAs with low-energy (100 eV) C + using combined ion-beam and molecular-beam epitaxy

NASA Astrophysics Data System (ADS)

Iida, Tsutomu; Makita, Yunosuke; Kimura, Shinji; Winter, Stefan; Yamada, Akimasa; Fons, Paul; Uekusa, Shin-ichiro

1995-01-01

A combined ion-beam and molecular-beam-epitaxy (CIBMBE) system has been developed. This system consists of an ion implanter capable of producing ions in the energy range of 30 eV-30 keV and conventional solid-source MBE. As a successful application of CIBMBE, low-energy (100 eV) carbon ion (C+) irradiation during MBE growth of GaAs was carried out at substrate temperatures Tg between 500 and 590 °C. C+-doped layers were characterized by low-temperature (2 K) photoluminescence (PL), Raman scattering, and van der Pauw measurements. PL spectra of undoped GaAs grown by CIBMBE revealed that unintentional impurity incorporation into the epilayer is extremely small and precise doping effects are observable. CAs acceptor-related emissions such as ``g,'' [g-g], and [g-g]β are observed and their spectra are significantly changed with increasing C+ beam current density Ic. PL measurements showed that C atoms were efficiently incorporated during MBE growth by CIBMBE and were optically well activated as an acceptor in the as-grown condition even for Tg as low as 500 °C. Raman measurement showed negligible lattice damage of the epilayer bombarded with 100 eV C+ with no subsequent heat treatment. These results indicate that contamination- and damage-free impurity doping without postgrowth annealing can be achieved by the CIBMBE method.

Ion-beam doping of GaAs with low-energy (100 eV) C(+) using combined ion-beam and molecular-beam epitaxy

NASA Astrophysics Data System (ADS)

Lida, Tsutomu; Makita, Yunosuke; Kimura, Shinji; Winter, Stefan; Yamada, Akimasa; Fons, Paul; Uekusa, Shin-Ichiro

1995-01-01

A combined ion-beam and molecular-beam-epitaxy (CIBMBE) system has been developed. This system consists of an ion implanter capable of producing ions in the energy range of 30 eV - 30 keV and conventional solid-source MBE. As a successful application of CIBMBE, low-energy (100 eV) carbon ion (C(+)) irradiation during MBE growth of GaAs was carried out at substrate temperatures T(sub g) between 500 and 590 C. C(+)-doped layers were characterized by low-temperature (2 K) photoluminescence (PL), Raman scattering, and van der Pauw measurements. PL spectra of undoped GaAs grown by CIBMBE revealed that unintentional impurity incorporation into the epilayer is extremely small and precise doping effects are observable. C(sub As) acceptor-related emissions such as 'g', (g-g), and (g-g)(sub beta) are observed and their spectra are significantly changed with increasing C(+) beam current density I(sub c). PL measurements showed that C atoms were efficiently incorporated during MBE growth by CIBMBE and were optically well activated as an acceptor in the as-grown condition even for T(sub g) as low as 500 C. Raman measurement showed negligible lattice damage of the epilayer bombarded with 100 eV C(+) with no subsequent heat treatment. These results indicate that contamination- and damage-free impurity doping without postgrowth annealing can be achieved by the CIBMBE method.

MBE Growth of HgCdTe on Large-Area Si and CdZnTe Wafers for SWIR, MWIR and LWIR Detection

NASA Astrophysics Data System (ADS)

Reddy, M.; Peterson, J. M.; Lofgreen, D. D.; Franklin, J. A.; Vang, T.; Smith, E. P. G.; Wehner, J. G. A.; Kasai, I.; Bangs, J. W.; Johnson, S. M.

2008-09-01

Molecular beam epitaxy (MBE) growth of HgCdTe on large-size Si (211) and CdZnTe (211)B substrates is critical to meet the demands of extremely uniform and highly functional third-generation infrared (IR) focal-panel arrays (FPAs). We have described here the importance of wafer maps of HgCdTe thickness, composition, and the macrodefects across the wafer not only to qualify material properties against design specifications but also to diagnose and classify the MBE-growth-related issues on large-area wafers. The paper presents HgCdTe growth with exceptionally uniform composition and thickness and record low macrodefect density on large Si wafers up to 6-in in diameter for the detection of short-wave (SW), mid-wave (MW), and long-wave (LW) IR radiation. We have also proposed a cost-effective approach to use the growth of HgCdTe on low-cost Si substrates to isolate the growth- and substrate-related problems that one occasionally comes across with the CdZnTe substrates and tune the growth parameters such as growth rate, cutoff wavelength ( λ cutoff) and doping parameters before proceeding with the growth on costly large-area CdZnTe substrates. In this way, we demonstrated HgCdTe growth on large CdZnTe substrates of size 7 cm × 7 cm with excellent uniformity and low macrodefect density.

Application of the ALE and MBE Methods to the Growth of Layered Hg sub x Cd sub 1-x Te Films.

DTIC Science & Technology

1986-09-26

films / We have studied the applicability of the Atomic Layer Epitaxy (ALE, vee Ref. -1pand Molecular Beam Epitaxy (MBE) ito growth of Hg2 Cdi- ,Te...thin- films throughout the composition range 0 x $ 0.8. The progress of the Contract has been reported periodically in five interim reports. This final...I separate sources) yielded films with high x values. On the grounds of these observations we do not find ALE suitable for growth of HgCdTe. 2) ALE

Prediction of metastable metal-rare gas fluorides: FMRgF (M=Be and Mg; Rg=Ar, Kr and Xe).

PubMed

Jayasekharan, T; Ghanty, T K

2008-04-14

The structure, stability, charge redistribution, bonding, and harmonic vibrational frequencies of rare gas containing group II-A fluorides with the general formula FMRgF (where M=Be and Mg; Rg=Ar, Kr, and Xe) have been investigated using second order Møller-Plesset perturbation theory, density functional theory, and coupled cluster theory [CCSD(T)] methods. The species, FMRgF show a quasilinear structure at the minima and a bent structure at the transition state. The predicted species are unstable with respect to the two-body dissociation channel, leading to the global minima (MF2+Rg) on the singlet potential energy surface. However, with respect to other two-body dissociation channel (FM+RgF), they are found to be stable and have high positive energies on the same surface. The computed binding energy for the two-body dissociation channels are 94.0, 164.7, and 199.7 kJ mol(-1) for FBeArF, FBeKrF, FBeXeF, respectively, at CCSD(T) method. The corresponding energy values are 83.4, 130.7, and 180.1 kJ mol(-1) for FMgArF, FMgKrF, and FMgXeF, respectively, at the same level of theory. With respect to the three-body dissociation (FM+Rg+F) channel as well as dissociation into atomic constituent, they are also found to be stable and have high positive energies. The dissociation of the predicted species typically proceeds via MRgF bending mode at the transition state. The computed barrier heights for the transition states are 11.4, 32.2, and 57.6 kJ mol(-1) for FBeArF, FBeKrF, and FBeXeF, respectively, at the CCSD(T) method. The corresponding barrier heights for the Mg containing species are 2.1, 9.2, and 32.1 kJ mol(-1) along the series Ar--Kr--Xe, respectively. The M--Rg bond energies of the FMRgF species is significantly higher than the corresponding bond energies of the M+--Rg species ( approximately 53 and approximately 15 kJ mol(-1) for Be+--Ar and Mg+--Ar, respectively). The computed energy diagram as well as the geometrical parameters along with the AIM results

Infrared Photodiodes Made by Low Energy Ion Etching of Molecular Beam Epitaxy Grown Mercury-Cadmium Alloy

NASA Astrophysics Data System (ADS)

Yoo, Sung-Shik

Ion etching was used to form junctions on the p-type (111)B Hg_{1-x}Cd_ {x}Te grown by Molecular Beam Epitaxy(MBE). When Hg_{1-x}Cd_{x}Te layers are etched by Ar ions at energies ranging between 300 and 450eV, the top Hg_{1 -x}Cd_{x}Te layer is converted to n-type. The converted region is electrically characterized as a defective n^+-region near the surface, and a low doped n^--region exist below the damaged region. The total thickness of the converted n-type layer was found to be considerable. These results suggest that the creation of the n-type layer is due to the filling of mercury vacancies by mercury atoms displaced by the Ar ion irradiation on the surface. For the performance of the resulting photodiodes on MBE grown (111)B Hg_{1-x}Cd _{x}Te using this technique, the dynamic resistances at 80K are one order of magnitude less than those of junctions made on Liquid Phase Epitaxially and Bulk grown Hg_{1 -x}Cd_{x}Te. The ion etching technique was compared with ion implantation technique by fabricating diodes on the same MBE grown (111)B Hg _{1-x}Cd_{x}Te layers. The result of the comparison illustrates that ion etching technique is as good as ion implantation technique for the fabrication of Hg_{1-x}Cd _{x}Te photodiodes. Also it is believed that the performance of the diodes is limited by a relatively large density of twin defects usually found in MBE grown (111)B Hg_{1-x}Cd _{x}Te.

InGaN pn-junctions grown by PA-MBE: Material characterization and fabrication of nanocolumn electroluminescent devices

NASA Astrophysics Data System (ADS)

Gherasoiu, I.; Yu, K. M.; Reichertz, L.; Walukiewicz, W.

2015-09-01

PN junctions are basic building blocks of many electronic devices and their performance depends on the structural properties of the component layers and on the type and the amount of the doping impurities incorporated. Magnesium is the common p-type dopant for nitride semiconductors while silicon and more recently germanium are the n-dopants of choice. In this paper, therefore we analyze the quantitative limits for Mg and Ge incorporation on GaN and InGaN with high In content. We also discuss the challenges posed by the growth and characterization of InGaN pn-junctions and we discuss the properties of large area, long wavelength nanocolumn LEDs grown on silicon (1 1 1) by PA-MBE.

MBE Growth, Characterization and Electronic Device Processing of HgCdTe, HgZnTe, Related Heterojunctions and HgCdTe-CdTe Superlattices

DTIC Science & Technology

1987-06-30

metal lattice sites using the liquid phase epitaxy. However, group V elements have not been successfully Incorporated Into MBE grown HgCdTe layer as...narrow-gap side was first Both groups used the liquid pweepitaxy (LPE) growth made with a thicknem of 2 to 3/pm before the growth condi- technique and...higher quasiequilibrium pressure than with the shutter opened. This study shows that with the particular geometry 27 used the time constant required

Energy Performance Assessment of Radiant Cooling System through Modeling and Calibration at Component Level

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khan, Yasin; Mathur, Jyotirmay; Bhandari, Mahabir S

2016-01-01

The paper describes a case study of an information technology office building with a radiant cooling system and a conventional variable air volume (VAV) system installed side by side so that performancecan be compared. First, a 3D model of the building involving architecture, occupancy, and HVAC operation was developed in EnergyPlus, a simulation tool. Second, a different calibration methodology was applied to develop the base case for assessing the energy saving potential. This paper details the calibration of the whole building energy model to the component level, including lighting, equipment, and HVAC components such as chillers, pumps, cooling towers, fans,more » etc. Also a new methodology for the systematic selection of influence parameter has been developed for the calibration of a simulated model which requires large time for the execution. The error at the whole building level [measured in mean bias error (MBE)] is 0.2%, and the coefficient of variation of root mean square error (CvRMSE) is 3.2%. The total errors in HVAC at the hourly are MBE = 8.7% and CvRMSE = 23.9%, which meet the criteria of ASHRAE 14 (2002) for hourly calibration. Different suggestions have been pointed out to generalize the energy saving of radiant cooling system through the existing building system. So a base case model was developed by using the calibrated model for quantifying the energy saving potential of the radiant cooling system. It was found that a base case radiant cooling system integrated with DOAS can save 28% energy compared with the conventional VAV system.« less

Status of the MBE technology at leti LIR for the manufacturing of HgCdTe focal plane arrays

NASA Astrophysics Data System (ADS)

Ferret, P.; Zanatta, J. P.; Hamelin, R.; Cremer, S.; Million, A.; Wolny, M.; Destefanis, G.

2000-06-01

This paper presents recent developments that have been made in Leti Infrared Laboratory in the field of molecular beam epitaxy (MBE) growth and fabrication of medium wavelength and long wavelength infrared (MWIR and LWIR) HgCdTe devices. The techniques that lead to growth temperature and flux control are presented. Run to run composition reproducibility is investigated on runs of more than 15 consecutively grown layers. Etch pit density in the low 105 cm-2 and void density lower than 103 cm-2 are obtained routinely on CdZnTe substrates. The samples exhibit low n-type carrier concentration in the 1014 to 1015 cm-3 range and mobility in excess of 105 cm2/Vs at 77 K for epilayers with 9.5 µm cut-off wavelength. LWIR diodes, fabricated with an-on-p homojunction process present dynamic resistance area products which reach values of 8 103 Ωcm2 for a biased voltage of -50 mV and a cutoff wavelength of 9.5 µm at 77 K. A 320 × 240 plane array with a 30 µm pitch operating at 77 K in the MWIR range has been developed using HgCdTe and CdTe layers MBE grown on a Germanium substrate. Mean NEDT value of 8.8 mK together with an operability of 99.94% is obtained. We fabricated MWIR two-color detectors by the superposition of layers of HgCdTe with different compositions and a mixed MESA and planar technology. These detectors are spatially coherent and can be independently addressed. Current voltage curves of 60 × 60 µm2 photodiodes have breakdown voltage exceeding 800 mV for each diode. The cutoff wavelength at 77 K is 3.1 µm for the MWIR-1 and 5 µm for the MWIR-2.

Control over dark current densities and cutoff wavelengths of GaAs/AlGaAs QWIP grown by multi-wafer MBE reactor

NASA Astrophysics Data System (ADS)

Roodenko, K.; Choi, K. K.; Clark, K. P.; Fraser, E. D.; Vargason, K. W.; Kuo, J.-M.; Kao, Y.-C.; Pinsukanjana, P. R.

2016-09-01

Performance of quantum well infrared photodetector (QWIP) device parameters such as detector cutoff wavelength and the dark current density depend strongly on the quality and the control of the epitaxy material growth. In this work, we report on a methodology to precisely control these critical material parameters for long wavelength infrared (LWIR) GaAs/AlGaAs QWIP epi wafers grown by multi-wafer production Molecular beam epitaxy (MBE). Critical growth parameters such as quantum well (QW) thickness, AlGaAs composition and QW doping level are discussed.

Demonstration of zero bias responsivity in MBE grown β-Ga2O3 lateral deep-UV photodetector

NASA Astrophysics Data System (ADS)

Singh Pratiyush, Anamika; Krishnamoorthy, Sriram; Kumar, Sandeep; Xia, Zhanbo; Muralidharan, Rangarajan; Rajan, Siddharth; Nath, Digbijoy N.

2018-06-01

We demonstrate zero-bias spectral responsivity in MBE-grown β-Ga2O3 planar UV-C detector with good linearity up to optical power density of 4.6 mW cm‑2. Devices with asymmetrical metal contacts were realized on 150 nm thick β-Ga2O3 films on sapphire. The device exhibited a spectral responsivity of 1.4 mA W‑1 at 255 nm under zero-bias condition, dark current <10 nA at 15 V and UV-to-visible rejection ratio ∼105 at 5 V. The demonstrated UV-C detector exhibited an estimated high detectivity of 2.0 × 1012 Jones at 1 V and were found to be very stable and repeatable, suggesting its potential use for focal plane arrays.

Multispectral InGaAs/GaAs/AlGaAs laser arrays by MBE growth on patterned substrates

NASA Astrophysics Data System (ADS)

Kamath, K.; Bhattacharya, P.; Singh, J.

1997-05-01

Multispectral semiconductor laser arrays on single chip is demonstrated by molecular beam epitaxial (MBE) growth of {In0.2Ga0.8As}/{GaAs} quantum well lasers on GaAs (1 0 0) substrates patterned by dry etching. No regrowth is needed for simple edge emitting lasers. It was observed that the laser characteristics are not degraded by the patterned growth. The shift in the emission wavelength obtained by this method can be controlled by varying the width of the pre-patterned ridges as well as by selecting the regions with different number of vertical sidewalls on both sides. We have also shown that multispectral vertical cavity surface emitting laser (VCSEL) arrays can be made by this technique with a single regrowth.

Reflection high energy electron diffraction study of nitrogen plasma interactions with a GaAs (100) surface

NASA Astrophysics Data System (ADS)

Hauenstein, R. J.; Collins, D. A.; Cai, X. P.; O'Steen, M. L.; McGill, T. C.

1995-05-01

Effect of a nitrogen electron-cyclotron-resonance (ECR) microwave plasma on near-surface composition, crystal structure, and morphology of the As-stabilized GaAs (100) surface is investigated with the use of digitally image-processed in situ reflection high energy electron diffraction. Nitridation is performed on molecular beam epitaxially (MBE) grown GaAs surfaces near 600 °C under typical conditions for ECR microwave plasma-assisted MBE growth of GaN films on GaAs. Brief plasma exposures (≊3-5 s) are shown to result in a specular, coherently strained, relatively stable, GaN film approximately one monolayer in thickness, which can be commensurately overgrown with GaAs while longer exposures (up to 1 min) result in incommensurate zincblende epitaxial GaN island structures. Specular and nonspecular film formations are explained in terms of N-for-As surface and subsurface anion exchange reactions, respectively. Commensurate growth of ultrathin buried GaN layers in GaAs is achieved.

An MBE growth facility for real-time in situ synchrotron x-ray topography studies of strained-layer III-V epitaxial materials

NASA Astrophysics Data System (ADS)

Whitehouse, C. R.; Barnett, S. J.; Soley, D. E. J.; Quarrell, J.; Aldridge, S. J.; Cullis, A. G.; Emeny, M. T.; Johnson, A. D.; Clarke, G. F.; Lamb, W.; Tanner, B. K.; Cottrell, S.; Lunn, B.; Hogg, C.; Hagston, W.

1992-01-01

This paper describes a unique combined UHV MBE growth x-ray topography facility designed to allow the first real-time synchrotron radiation x-ray topography study of strained-layer III-V growth processes. This system will enable unambiguous determination of dislocation nucleation and multiplication processes as a function of controlled variations in growth conditions, and also during post-growth thermal processing. The planned experiments have placed very stringent demands upon the engineering design of the system, and design details regarding the growth chamber; sample manipulator, x-ray optics, and real-time imaging systems are described. Results obtained during a feasibility study are also presented.

An MBE growth facility for real-time in situ synchrotron x-ray topography studies of strained-layer III--V epitaxial materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Whitehouse, C.R.; Barnett, S.J.; Soley, D.E.J.

1992-01-01

This paper describes a unique combined UHV MBE growth x-ray topography facility designed to allow the first real-time synchrotron radiation x-ray topography study of strained-layer III--V growth processes. This system will enable unambiguous determination of dislocation nucleation and multiplication processes as a function of controlled variations in growth conditions, and also during post-growth thermal processing. The planned experiments have placed very stringent demands upon the engineering design of the system, and design details regarding the growth chamber; sample manipulator, x-ray optics, and real-time imaging systems are described. Results obtained during a feasibility study are also presented.

Synthesis and characterizations of nanoscale single crystal GaN grown by ion assisted gas source MBE

NASA Astrophysics Data System (ADS)

Cui, Bentao; Cohen, P. I.

2004-03-01

Nanoscale patterns could be induced by ion bombardment [1, 2]. In this study, an in-situ real time light scattering technique, combined with Reflection High Energy Electron Diffraction (RHEED), were used to study the surface morphology evolution during the ion beam assisted growth of GaN in a gas source MBE system. Ga was provided by a thermal effusion cell. Ammonia was used as the nitrogen source. A hot-filament Kaufman ion source was used to supply sub-KeV ion beams. Sapphire and MOCVD GaN templates were used as the substrates. A custom-designed Desorption Mass Spectrometer (DMS) was used to calibrate the growth temperature and determine the growth rate. Before growing GaN, the sapphire substrates were pretreated in an ion flux and then annealed for cleaning. The sapphire surface was then nitrided in ammonia at 1100K for about 10 min. After nitridation, a thin GaN buffer layer was prepared by a sequence of adsorption and annealing steps. During the growth, the short-range surface morphology and film quality were monitored in situ by RHEED. In a real-time way, the long-range surface morphology was monitored in-situ by light scattering technique. Photodiode array detector and CCD camera were used to record the reflected light scattering intensity and spectra profile respectively. Periodical patterns, such as ripple, have been observed during ion bombardment on GaN with or without growth. A linear theory (from Bradley and Harper 1988 [3]) has been modified to explain the dependence of ripple wavelength on ion species and ion energy. Partially supported by the National Science Foundation and the Air Force Office of Scientific Research. [1]. J. Erlebacher, M. J. Aziz, E. Chason, M. B. Sinclair, and J. A. Floro, Phys. Rev. Lett. 82, 2330 (1998); J. Erlebacher, M. J. Aziz, E. Chason, M. B. Sinclair, and J. A. Floro, Phys. Rev. Lett. 84, 5800 (2000). [2]. S. Facsko, T. Dekorsy, C. Koerdt, C. Trappe, H. Kurz, A. Vogt et al.. Science 285, 1551 (1999). [3]. R. M. Bradley

AlGaN/GaN HEMTs regrown by MBE on epi-ready semi-insulating GaN-on-sapphire with inhibited interface contamination

NASA Astrophysics Data System (ADS)

Cordier, Y.; Azize, M.; Baron, N.; Chenot, S.; Tottereau, O.; Massies, J.

2007-11-01

In this work, we show that, by carefully designing the subsurface Fe doping profile in SI-GaN templates grown by MOVPE and by optimizing the MBE regrowth conditions, a highly resistive GaN buffer can be achieved on these epi-ready GaN-on-sapphire templates without any addition of acceptors during the regrowth. As a result, high-quality high electron mobility transistors can be fabricated. Furthermore, we report on the excellent properties of two-dimensional electron gas and device performances with electron mobility greater than 2000 cm 2/V s at room temperature and off-state buffer leakage currents as low as 5 μA/mm at 100 V.

Correlation energy extrapolation by many-body expansion

DOE PAGES

Boschen, Jeffery S.; Theis, Daniel; Ruedenberg, Klaus; ...

2017-01-09

Accounting for electron correlation is required for high accuracy calculations of molecular energies. The full configuration interaction (CI) approach can fully capture the electron correlation within a given basis, but it does so at a computational expense that is impractical for all but the smallest chemical systems. In this work, a new methodology is presented to approximate configuration interaction calculations at a reduced computational expense and memory requirement, namely, the correlation energy extrapolation by many-body expansion (CEEMBE). This method combines a MBE approximation of the CI energy with an extrapolated correction obtained from CI calculations using subsets of the virtualmore » orbitals. The extrapolation approach is inspired by, and analogous to, the method of correlation energy extrapolation by intrinsic scaling. Benchmark calculations of the new method are performed on diatomic fluorine and ozone. Finally, the method consistently achieves agreement with CI calculations to within a few mhartree and often achieves agreement to within ~1 millihartree or less, while requiring significantly less computational resources.« less

Correlation energy extrapolation by many-body expansion

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boschen, Jeffery S.; Theis, Daniel; Ruedenberg, Klaus

Accounting for electron correlation is required for high accuracy calculations of molecular energies. The full configuration interaction (CI) approach can fully capture the electron correlation within a given basis, but it does so at a computational expense that is impractical for all but the smallest chemical systems. In this work, a new methodology is presented to approximate configuration interaction calculations at a reduced computational expense and memory requirement, namely, the correlation energy extrapolation by many-body expansion (CEEMBE). This method combines a MBE approximation of the CI energy with an extrapolated correction obtained from CI calculations using subsets of the virtualmore » orbitals. The extrapolation approach is inspired by, and analogous to, the method of correlation energy extrapolation by intrinsic scaling. Benchmark calculations of the new method are performed on diatomic fluorine and ozone. Finally, the method consistently achieves agreement with CI calculations to within a few mhartree and often achieves agreement to within ~1 millihartree or less, while requiring significantly less computational resources.« less

Possibility of a quasi-liquid layer of As on GaAs substrate grown by MBE as observed by enhancement of Ga desorption at high As pressure

NASA Astrophysics Data System (ADS)

Asai, K.; Feng, J. M.; Vaccaro, P. O.; Fujita, K.; Ohachi, T.

2000-06-01

The As vapor pressure dependence of the Ga desorption rate during molecular beam epitaxy (MBE) growth on GaAs( n11)A ( n=1-4 hereafter) substrates was studied by photoluminescence (PL) measurements at 12 K for undoped AlGaAs/GaAs asymmetric double quantum wells (ADQWs). Reflection high energy electron diffraction (RHEED) oscillation measurements on a GaAs(100) surface were also used. Two K-cells of As solid sources (corresponding to beam equivalent pressures (BEPs) of 9.0×10 -6 and 4.5×10 -5 Torr) were used to change the As pressure rapidly. The Ga flux and substrate temperature were kept constant at 0.76 ML/s and 12 K, respectively, while the As flux changed from 7.6 (BEP 9.0×10 -6 Torr) to 32 ML/s (4.5×10 -5 Torr). With increasing As pressure, two separated PL peaks for the wide well (WW) of high index substrates were observed. This peak separation is attributed to a reduced well depth from an increasing Ga desorption rate. The energy differences of the PL peak depending on the off-angle from (111)A to (100) plane indicates an orientation-dependent Ga desorption rate. Moreover, amongst all ( n11)A and (100) planes, the Ga desorption rate was smallest from the (111)A surface. The increase of Ga desorption from the surface at high As pressures probably arose from an increasing coverage with a quasi-liquid layer (QLL).

MBE growth of strain-compensated InGaAs/InAlAs/InP quantum cascade lasers

NASA Astrophysics Data System (ADS)

Gutowski, P.; Sankowska, I.; Karbownik, P.; Pierścińska, D.; Serebrennikova, O.; Morawiec, M.; Pruszyńska-Karbownik, E.; Gołaszewska-Malec, K.; Pierściński, K.; Muszalski, J.; Bugajski, M.

2017-05-01

We investigate growth conditions for strain-compensated In0.67Ga0.33As/In0.36Al0.64As/InP quantum cascade lasers (QCLs) by solid-source molecular beam epitaxy (SSMBE). The extensive discussion of growth procedures is presented. The technology was first elaborated for In0.53Ga0.47As/In0.52Al0.48As material system lattice matched to InP. After that QCLs with lattice matched active region were grown for validation of design and obtained material quality. The next step was elaboration of growth process and especially growth preparation procedures for strain compensated active regions. The grown structures were examined by HRXRD, AFM, and TEM techniques. The on-line implementation of obtained results in subsequent growth runs was crucial for achieving room temperature operating 4.4-μm lasers. For uncoated devices with Fabry-Perrot resonator up to 250 mW of optical power per facet at 300 K was obtained under pulsed conditions. The paper focuses on MBE technology and presents developed algorithm for strain-compensated QCL growth.

Epitaxial GaN layers formed on langasite substrates by the plasma-assisted MBE method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lobanov, D. N., E-mail: dima@ipmras.ru; Novikov, A. V.; Yunin, P. A.

2016-11-15

In this publication, the results of development of the technology of the epitaxial growth of GaN on single-crystal langasite substrates La{sub 3}Ga{sub 5}SiO{sub 14} (0001) by the plasma-assisted molecular-beam epitaxy (PA MBE) method are reported. An investigation of the effect of the growth temperature at the initial stage of deposition on the crystal quality and morphology of the obtained GaN layer is performed. It is demonstrated that the optimal temperature for deposition of the initial GaN layer onto the langasite substrate is about ~520°C. A decrease in the growth temperature to this value allows the suppression of oxygen diffusion frommore » langasite into the growing layer and a decrease in the dislocation density in the main GaN layer upon its subsequent high-temperature deposition (~700°C). Further lowering of the growth temperature of the nucleation layer leads to sharp degradation of the GaN/LGS layer crystal quality. As a result of the performed research, an epitaxial GaN/LGS layer with a dislocation density of ~10{sup 11} cm{sup –2} and low surface roughness (<2 nm) is obtained.« less

Structure Shift of GaN Among Nanowall Network, Nanocolumn, and Compact Film Grown on Si (111) by MBE.

PubMed

Zhong, Aihua; Fan, Ping; Zhong, Yuanting; Zhang, Dongping; Li, Fu; Luo, Jingting; Xie, Yizhu; Hane, Kazuhiro

2018-02-13

Structure shift of GaN nanowall network, nanocolumn, and compact film were successfully obtained on Si (111) by plasma-assisted molecular beam epitaxy (MBE). As is expected, growth of the GaN nanocolumns was observed in N-rich condition on bare Si, and the growth shifted to compact film when the Ga flux was improved. Interestingly, if an aluminum (Al) pre-deposition for 40 s was carried out prior to the GaN growth, GaN grows in the form of the nanowall network. Results show that the pre-deposited Al exits in the form of droplets with typical diameter and height of ~ 80 and ~ 6.7 nm, respectively. A growth model for the nanowall network is proposed and the growth mechanism is discussed. GaN grows in the area without Al droplets while the growth above Al droplets is hindered, resulting in the formation of continuous GaN nanowall network that removes the obstacles of nano-device fabrication.

Structure Shift of GaN Among Nanowall Network, Nanocolumn, and Compact Film Grown on Si (111) by MBE

NASA Astrophysics Data System (ADS)

Zhong, Aihua; Fan, Ping; Zhong, Yuanting; Zhang, Dongping; Li, Fu; Luo, Jingting; Xie, Yizhu; Hane, Kazuhiro

2018-02-01

Structure shift of GaN nanowall network, nanocolumn, and compact film were successfully obtained on Si (111) by plasma-assisted molecular beam epitaxy (MBE). As is expected, growth of the GaN nanocolumns was observed in N-rich condition on bare Si, and the growth shifted to compact film when the Ga flux was improved. Interestingly, if an aluminum (Al) pre-deposition for 40 s was carried out prior to the GaN growth, GaN grows in the form of the nanowall network. Results show that the pre-deposited Al exits in the form of droplets with typical diameter and height of 80 and 6.7 nm, respectively. A growth model for the nanowall network is proposed and the growth mechanism is discussed. GaN grows in the area without Al droplets while the growth above Al droplets is hindered, resulting in the formation of continuous GaN nanowall network that removes the obstacles of nano-device fabrication.

>100% output differential efficiency 1.55-μm VCSELs using submonolayer superlattices digital-alloy multiple-active-regions grown by MBE on InP

NASA Astrophysics Data System (ADS)

Wang, C. S.; Koda, R.; Huntington, A. S.; Gossard, A. C.; Coldren, L. A.

2005-04-01

High-quality InAlGaAs digital-alloy active regions using submonolayer superlattices were developed and employed in a 3-stage bipolar cascade multiple-active-region vertical cavity surface emitting laser (VCSEL) design. The photoluminescence intensity and linewidth of these active regions were optimized by varying the substrate temperature and digitization period. These active regions exhibit considerable improvement over previously developed digital-alloy active regions and are comparable to analog-alloy active regions. Multiple-active-region VCSELs, grown all-epitaxially by MBE on InP, demonstrate greater than 100% output differential efficiency at 1.55-μm emission. A record high 104% output differential efficiency was achieved for a 3-stage long-wavelength VCSEL.

High Quality GaAs Growth by MBE on Si Using GeSi Buffers and Prospects for Space Photovoltaics

NASA Technical Reports Server (NTRS)

Carlin, J. A.; Ringel, S. A.; Fitzgerald, E. A.; Bulsara, M.

2005-01-01

III-V solar cells on Si substrates are of interest for space photovoltaics since this would combine high performance space cells with a strong, lightweight and inexpensive substrate. However, the primary obstacles blocking III-V/Si cells from achieving high performance to date have been fundamental materials incompatabilities, namely the 4% lattice mismatch between GaAs and Si, and the large mismatch in thermal expansion coefficient. In this paper, we report on the molecular beam epitaxial (MBE) growth and properties of GaAs layers and single junction GaAs cells on Si wafers which utilize compositionally graded GeSi Intermediate buffers grown by ultra-high vacuum chemical vapor deposition (UHVCVD) to mitigate the large lattice mismatch between GaAs and Si. Ga As cell structures were found to incorporate a threading dislocation density of 0.9-1.5 x 10 (exp 6) per square centimeter, identical to the underlying relaxed Ge cap of the graded buffer, via a combination of transmission electron microscopy, electron beam induced current, and etch pit density measurements. AlGaAs/GaAs double heterostructures wre grown on the GeSi/Si substrates for time-resolved photoluminescence measurements, which revealed a bulk GaAs minority carrier lifetime in excess of 10 ns, the highest lifetime ever reported for GaAs on Si. A series of growth were performed to ass3ss the impact of a GaAs buffer to a thickness of only 0.1 micrometer. Secondary ion mass spectroscopy studies revealed that there is negligible cross diffusion of Ga, As and Ge at he III-V/Ge interface, identical to our earlier findings for GaAs grown on Ge wafers using MBE. This indicates that there is no need for a buffer to "bury" regions of high autodopjing,a nd that either pn or np configuration cells are easily accomodated by these substrates. Preliminary diodes and single junction Al Ga As heteroface cells were grown and fabricated on the Ge/GeSi/Si substrates for the first time. Diodes fabricated on GaAs, Ge and Ge

Study of thin film growth kinetics of homoepitaxy by molecular beam epitaxy and pulsed laser deposition

NASA Astrophysics Data System (ADS)

Shin, Byungha

This thesis presents an extensive study of the growth kinetics during low temperature homoepitaxy by Molecular Beam Epitaxy (MBE) and Pulsed Laser Deposition (PLD) of our model system Ge(001). The range of the study covers from the sub-monolayer (sub-ML) regime to the later stage where film thickness amounts to a few thousand MLs; it also covers epitaxial breakdown in which epitaxial growth is no longer sustained and the growing phase becomes amorphous. First, we have conducted a systematic investigation of the phase shift of the RHEED intensity oscillations during Ge(001) homoepitaxy MBE for a wide range of diffraction conditions. We conclude that the phase shift is caused by the overlap of the specular spot and the Kikuchi features, in contrast to models involving dynamical scattering theory for the phase shift. We have studied the sub-ML growth of Ge(001) homoepitaxy by MBE at low temperatures using RHEED intensity oscillations obtained for a range of low incidence angles where the influence of the dynamical nature of electron scattering such as the Kikuchi features is minimized. We have developed a new model for RHEED specular intensity that includes the diffuse scattering off surface steps and the layer interference between terraces of different heights using the kinematic approximation. By using the model to interpret the measured RHEED intensity, we find the evolution of the coverage of the first 2--3 layers, from which we infer the ES barrier height to be 0.077 +/- 0.014 eV. Finally, using a dual MBE-PLD UHV chamber, we have conducted experiments under identical thermal, background, and surface preparation conditions to compare Ge(001) homoepitaxial growth morphology in PLD and MBE at low temperatures. To isolate the effect of kinetic energy of depositing species during PLD, we varied the average kinetic energy: ˜450 eV in PLD-HKE, ˜300 eV in PLD-LKE, and <1 eV in PLD-TH. At 150°C, we find that in PLD-LKE and in MBE the film morphology evolves in a

X-ray magnetic spectroscopy of MBE-grown Mn-doped Bi{sub 2}Se{sub 3} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Collins-McIntyre, L. J.; Watson, M. D.; Zhang, S. L.

2014-12-15

We report the growth of Mn-doped Bi{sub 2}Se{sub 3} thin films by molecular beam epitaxy (MBE), investigated by x-ray diffraction (XRD), atomic force microscopy (AFM), SQUID magnetometry and x-ray magnetic circular dichroism (XMCD). Epitaxial films were deposited on c-plane sapphire substrates by co-evaporation. The films exhibit a spiral growth mechanism typical of this material class, as revealed by AFM. The XRD measurements demonstrate a good crystalline structure which is retained upon doping up to ∼7.5 atomic-% Mn, determined by Rutherford backscattering spectrometry (RBS), and show no evidence of the formation of parasitic phases. However an increasing interstitial incorporation of Mnmore » is observed with increasing doping concentration. A magnetic moment of 5.1 μ{sub B}/Mn is obtained from bulk-sensitive SQUID measurements, and a much lower moment of 1.6 μ{sub B}/Mn from surface-sensitive XMCD. At ∼2.5 K, XMCD at the Mn L{sub 2,3} edge, reveals short-range magnetic order in the films and indicates ferromagnetic order below 1.5 K.« less

Vanadium dioxide thin films prepared on silicon by low temperature MBE growth and ex-situ annealing

NASA Astrophysics Data System (ADS)

Homm, Pia; van Bilzen, Bart; Menghini, Mariela; Locquet, Jean-Pierre; Ivanova, Todora; Sanchez, Luis; Sanchis, Pablo

Vanadium dioxide (VO2) is a material that shows an insulator to metal transition (IMT) near room temperature. This property can be exploited for applications in field effect devices, electro-optical switches and nonlinear circuit components. We have prepared VO2 thin films on silicon wafers by combining a low temperature MBE growth with an ex-situ annealing at high temperature. We investigated the structural, electrical and optical characteristics of films with thicknesses ranging from 10 to 100 nm. We have also studied the influence of the substrate cleaning. The films grown with our method are polycrystalline with a preferred orientation in the (011) direction of the monoclinic phase. For the films produced on silicon with a native oxide, an IMT at around 75 °C is observed. The magnitude of the resistance change across the IMT decreases with thickness while the refractive index at room temperature corresponds with values reported in the literature for thin films. The successful growth of VO2 films on silicon with good electrical and optical properties is an important step towards the integration of VO2 in novel devices. The authors acknowledge financial support from the FWO project G052010N10 and EU-FP7 SITOGA project. PH acknowledges support from Becas Chile - CONICYT.

Dynamic Curvature and Stress Studies for MBE CdTe on Si and GaAs Substrates

NASA Astrophysics Data System (ADS)

Jacobs, R. N.; Jaime Vasquez, M.; Lennon, C. M.; Nozaki, C.; Almeida, L. A.; Pellegrino, J.; Arias, J.; Taylor, C.; Wissman, B.

2015-09-01

Infrared focal plane arrays (IRFPA) based on HgCdTe semiconductor alloys have been shown to be ideal for tactical and strategic applications. High density (>1 M pixel), high operability HgCdTe detectors on large area, low-cost composite substrates, such as CdTe-buffered Si or GaAs, are envisioned for next-generation IRFPAs. Thermal expansion mismatch is among various material parameters that govern the structural properties of the final detector layer. It has previously been shown that thermal expansion mismatch plays the dominant role in the residual stress characteristics of these heteroepitaxial structures (Jacobs et al. in J Electron Mater 37:1480, 2008). The wafer curvature (bowing) resulting from residual stress, is a likely source of problems that may occur during subsequent processing. This includes cracking of the film and substrate during post-growth annealing processes or even certain characterization techniques. In this work, we examine dynamic curvature and stress during molecular beam epitaxy (MBE), of CdTe on Si and GaAs substrates. The effect of temperature changes on wafer curvature throughout the growth sequence is documented using a multi-beam optical sensor developed by K-Space Associates. This monitoring technique makes possible the study of growth sequences which employ annealing schemes and/or interlayers to influence the final residual stress state of the heteroepitaxial structures.

Comparison of electrical properties and deep traps in p-AlxGa1-xN grown by molecular beam epitaxy and metal organic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Kozhukhova, E. A.; Dabiran, A. M.; Chow, P. P.; Wowchak, A. M.; Lee, In-Hwan; Ju, Jin-Woo; Pearton, S. J.

2009-10-01

The electrical properties, admittance spectra, microcathodoluminescence, and deep trap spectra of p-AlGaN films with an Al mole fraction up to 45% grown by both metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) were compared. The ionization energy of Mg increases from 0.15 to 0.17 eV in p-GaN to 0.3 eV in 45% Al p-AlGaN. In p-GaN films grown by MBE and MOCVD and in MOCVD grown p-AlGaN, we observed additional acceptors with a concentration an order lower than that of Mg acceptors, with a higher hole capture cross section and an ionization energy close to that of Mg. For some of the MBE grown p-AlGaN, we also detected the presence of additional acceptor centers, but in that case the centers were located near the p-AlGaN layer interface with the semi-insulating AlGaN buffer and showed activation energies considerably lower than those of Mg.

Fabrication of precision high quality facets on molecular beam epitaxy material

DOEpatents

Petersen, Holly E.; Goward, William D.; Dijaili, Sol P.

2001-01-01

Fabricating mirrored vertical surfaces on semiconductor layered material grown by molecular beam epitaxy (MBE). Low energy chemically assisted ion beam etching (CAIBE) is employed to prepare mirrored vertical surfaces on MBE-grown III-V materials under unusually low concentrations of oxygen in evacuated etching atmospheres of chlorine and xenon ion beams. UV-stabilized smooth-surfaced photoresist materials contribute to highly vertical, high quality mirrored surfaces during the etching.

The structural and optical properties of high-Al-content AlInGaN epilayers grown by RF-MBE

NASA Astrophysics Data System (ADS)

Wang, Baozhu; An, Tao; Wen, Huanming; Wu, Ruihong; An, Shengbiao; Zhang, Xiuqing; Wang, Xiaoliang

2008-11-01

AlInGaN Quaternary Alloys were successfully grown on sapphire substrate by radio-frequency plasma-excited molecular beam epitaxy (RF-MBE). Different Al content AlInGaN quaternary alloys were acquired by changing the Al cell's temperature. The streaky RHEED pattern observed during AlInGaN growth showed the layer-by-layer growth mode. Rutherford back-scattering spectrometry (RBS), X-Ray diffraction (XRD) and Cathodoluminescence (CL) were used to characterize the structural and optical properties of the AlInGaN alloys. The experimental results show that the AlInGaN with appropriate Al cell's temperature, could acquire Al/In ratio near 4.7, then could acquire better crystal and optical quality. The samllest X-ray and CL full-width at half-maximum (FWHM) of the AlInGaN are 5arcmin and 25nm, respectivly. There are some cracks and V-defects occur in high-Al/In-ratio AlInGaN alloys. In the CL image, the cracks and V-defect regions are the emission-enhanced regions. The emission enhancement of the cracked and V-defect regions may be related to the In-segregation.

A photoluminescence study of the effects of hydrogen on deep levels in MBE grown GaAlAs:Si

NASA Astrophysics Data System (ADS)

Bosacchi, A.; Franchi, S.; Vanzetti, L.; Allegri, P.; Grilli, E.; Guzzi, M.; Zamboni, R.; Pavesi, L.

1991-04-01

We present a study on low-temperature photoluminescence (PL) of Si-doped Ga 1- xAl xAs ( n ~ 1 × 10 17 cm -3, 0.2 ⩽ x ⩽ 0.5) grown by MBE in the presence and in the absence of a hydrogen backpressure, and post-growth hydrogenated or not, by exposure to a hydrogen plasma. The PL spectra of GaAlAs grown without hydrogen are dominated by transitions involving relatively deep donors and/or acceptors independently on whether the material is post-growth hydrogenated. On the contrary, the spectra of GaAlAs grown in the presence of hydrogen are characterized by recombinations related to excitons and/or to shallow donors and acceptors. Both the in-situ and the ex-situ processes result in PL efficiency enhancements, which are definitely larger (by a factor of up to 20) when the former treatment is used. All of the above results suggest that the ex-situ and the in-situ treatments may affect deep levels of different origin, such as DX centers (related to the band structure of the semiconductor) and levels associated to Al-O complexes, respectively.

Kinetic modeling of microscopic processes during electron cyclotron resonance microwave plasma-assisted molecular beam epitaxial growth of GaN/GaAs-based heterostructures

NASA Astrophysics Data System (ADS)

Bandić, Z. Z.; Hauenstein, R. J.; O'Steen, M. L.; McGill, T. C.

1996-03-01

Microscopic growth processes associated with GaN/GaAs molecular beam epitaxy (MBE) are examined through the introduction of a first-order kinetic model. The model is applied to the electron cyclotron resonance microwave plasma-assisted MBE (ECR-MBE) growth of a set of δ-GaNyAs1-y/GaAs strained-layer superlattices that consist of nitrided GaAs monolayers separated by GaAs spacers, and that exhibit a strong decrease of y with increasing T over the range 540-580 °C. This y(T) dependence is quantitatively explained in terms of microscopic anion exchange, and thermally activated N surface-desorption and surface-segregation processes. N surface segregation is found to be significant during GaAs overgrowth of GaNyAs1-y layers at typical GaN ECR-MBE growth temperatures, with an estimated activation energy Es˜0.9 eV. The observed y(T) dependence is shown to result from a combination of N surface segregation/desorption processes.

Dominant transverse-electric polarized emission from 298 nm MBE-grown AlN-delta-GaN quantum well ultraviolet light-emitting diodes

NASA Astrophysics Data System (ADS)

Liu, Cheng; Ooi, Yu Kee; Islam, S. M.; Xing, Huili Grace; Jena, Debdeep; Zhang, Jing

2017-02-01

III-nitride based ultraviolet (UV) light emitting diodes (LEDs) are of considerable interest in replacing gas lasers and mercury lamps for numerous applications. Specifically, AlGaN quantum well (QW) based LEDs have been developed extensively but the external quantum efficiencies of which remain less than 10% for wavelengths <300 nm due to high dislocation density, difficult p-type doping and most importantly, the physics and band structure from the three degeneration valence subbands. One solution to address this issue at deep UV wavelengths is by the use of the AlGaN-delta-GaN QW where the insertion of the delta-GaN layer can ensure the dominant conduction band (C) - heavyhole (HH) transition, leading to large transverse-electric (TE) optical output. Here, we proposed and investigated the physics and polarization-dependent optical characterizations of AlN-delta- GaN QW UV LED at 300 nm. The LED structure is grown by Molecular Beam Epitaxy (MBE) where the delta-GaN layer is 3-4 monolayer (QW-like) sandwiched by 2.5-nm AlN sub-QW layers. The physics analysis shows that the use of AlN-delta-GaN QW ensures a larger separation between the top HH subband and lower-energy bands, and strongly localizes the electron and HH wave functions toward the QW center and hence resulting in 30-time enhancement in TEpolarized spontaneous emission rate, compared to that of a conventional Al0.35Ga0.65N QW. The polarization-dependent electroluminescence measurements confirm our theoretical analysis; a dominant TE-polarized emission was obtained at 298 nm with a minimum transverse-magnetic (TM) polarized emission, indicating the feasibility of high-efficiency TEpolarized UV emitters based on our proposed QW structure.

GaAsPN-based PIN solar cells MBE-grown on GaP substrates: toward the III-V/Si tandem solar cell

NASA Astrophysics Data System (ADS)

Da Silva, M.; Almosni, S.; Cornet, C.; Létoublon, A.; Levallois, C.; Rale, P.; Lombez, L.; Guillemoles, J.-F.; Durand, O.

2015-03-01

GaAsPN semiconductors are promising material for the elaboration of high efficiencies tandem solar cells on silicon substrates. GaAsPN diluted nitride alloy is studied as the top junction material due to its perfect lattice matching with the Si substrate and its ideal bandgap energy allowing a perfect current matching with the Si bottom cell. We review our recent progress in materials development of the GaAsPN alloy and our recent studies of some of the different building blocks toward the elaboration of a PIN solar cell. A lattice matched (with a GaP(001) substrate, as a first step toward the elaboration on a Si substrate) 1μm-thick GaAsPN alloy has been grown by MBE. After a post-growth annealing step, this alloy displays a strong absorption around 1.8-1.9 eV, and efficient photoluminescence at room temperature suitable for the elaboration of the targeted solar cell top junction. Early stage GaAsPN PIN solar cells prototypes have been grown on GaP (001) substrates, with 2 different absorber thicknesses (1μm and 0.3μm). The external quantum efficiencies and the I-V curves show that carriers have been extracted from the GaAsPN alloy absorbers, with an open-circuit voltage of 1.18 V, while displaying low short circuit currents meaning that the GaAsPN structural properties needs a further optimization. A better carrier extraction has been observed with the absorber displaying the smallest thickness, which is coherent with a low carriers diffusion length in our GaAsPN compound. Considering all the pathways for improvement, the efficiency obtained under AM1.5G is however promising.

n-VO2/p-GaN based nitride-oxide heterostructure with various thickness of VO2 layer grown by MBE

NASA Astrophysics Data System (ADS)

Wang, Minhuan; Bian, Jiming; Sun, Hongjun; Liu, Weifeng; Zhang, Yuzhi; Luo, Yingmin

2016-12-01

High quality VO2 films with precisely controlled thickness were grown on p-GaN/sapphire substrates by oxide molecular beam epitaxy (O-MBE). Results indicated that a distinct reversible semiconductor-to-metal (SMT) phase transition was observed for all the samples in the temperature dependent electrical resistance measurement, and the influence of VO2 layer thickness on the SMT properties of the as-grown n-VO2/p-GaN based nitride-oxide heterostructure was investigated. Meanwhile, the clear rectifying transport characteristics originated from the n-VO2/p-GaN interface were demonstrated before and after SMT of the VO2 over layer, which were attributed to the p-n junction behavior and Schottky contact character, respectively. Moreover, the X-ray photoelectron spectroscopy (XPS) analyses confirmed the valence state of vanadium (V) in VO2 films was principally composed of V4+ with trace amount of V5+. The design and modulation of the n-VO2/p-GaN based heterostructure devices will benefit significantly from these achievements.

Dual-wavelength excited photoluminescence spectroscopy of deep-level hole traps in Ga(In)NP

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dagnelund, D.; Huang, Y. Q.; Buyanova, I. A.

2015-01-07

By employing photoluminescence (PL) spectroscopy under dual-wavelength optical excitation, we uncover the presence of deep-level hole traps in Ga(In)NP alloys grown by molecular beam epitaxy (MBE). The energy level positions of the traps are determined to be at 0.56 eV and 0.78 eV above the top of the valance band. We show that photo-excitation of the holes from the traps, by a secondary light source with a photon energy below the bandgap energy, can lead to a strong enhancement (up to 25%) of the PL emissions from the alloys under a primary optical excitation above the bandgap energy. We further demonstrate thatmore » the same hole traps can be found in various MBE-grown Ga(In)NP alloys, regardless of their growth temperatures, chemical compositions, and strain. The extent of the PL enhancement induced by the hole de-trapping is shown to vary between different alloys, however, likely reflecting their different trap concentrations. The absence of theses traps in the GaNP alloy grown by vapor phase epitaxy suggests that their incorporation could be associated with a contaminant accompanied by the N plasma source employed in the MBE growth, possibly a Cu impurity.« less

MBE grown III-V strain relaxed buffer layers and superlattices characterized by atomic force microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Howard, A.J.; Fritz, I.J.; Drummond, T.J.

1993-11-01

Using atomic force microscopy (AFM), the authors have investigated the effects of growth temperature and dopant incorporation on the surface morphology of MBE grown graded buffer layers and strained layer superlattices (SLSs) in the InGaAlAs/GaAs and InAsSb/InSb material systems. The AFM results show quantitatively that over the temperature range from 380 to 545 C, graded in{sub x}Al{sub 1{minus}x}As(x = 0.05 {minus} 0.32) buffer layers grown at high temperatures ({approximately}520 C), and graded In{sub x}Ga{sub 1{minus}x}As (x = 0.05 {minus} 0.33) buffer layers and In{sub 0.4}Ga{sub 0.6}As/In{sub 0.26}Al{sub 0.35}Ga{sub 0.39}As SLSs grown at low temperatures ({approximately}400 C) have the lowest RMSmore » roughness. Also, for SLSs InAs{sub 0.21}Sb{sub 0.79}/InSb, undoped layers grown at 470 C were smoother than undoped layers grown at 420 C and Be-doped layers grown at 470 C. These results illustrate the role of surface tension in the growth of strained layer materials near the melting temperature of the InAs{sub x}Sb{sub {minus}x}/InSb superlattice. Nomarski interference and transmission electron microscopies, IR photoluminescence, x-ray diffraction, and photocurrent spectroscopy were also used to evaluate the relative quality of the material but usually, the results were not conclusive.« less

Structural and optical studies of GaN pn-junction with AlN buffer layer grown on Si (111) by RF plasma enhanced MBE

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yusoff, Mohd Zaki Mohd; Hassan, Zainuriah; Woei, Chin Che

2012-06-29

GaN pn-junction grown on silicon substrates have been the focus in a number of recent reports and further effort is still necessary to improve its crystalline quality for practical applications. GaN has the high n-type background carrier concentration resulting from native defects commonly thought to be nitrogen vacancies. In this work, we present the growth of pn-junction of GaN on Si (111) substrate using RF plasma-enhanced molecular beam epitaxy (MBE). Both of the layers show uniformity with an average thickness of 0.709 {mu}m and 0.095 {mu}m for GaN and AlN layers, respectively. The XRD spectra indicate that no sign ofmore » cubic phase of GaN are found, so it is confirmed that the sample possessed hexagonal structure. It was found that all the allowed Raman optical phonon modes of GaN, i.e. the E2 (low), E1 (high) and A1 (LO) are clearly visible.« less

Electrical characterizations of MIS structures based on variable-gap n(p)-HgCdTe grown by MBE on Si(0 1 3) substrates

NASA Astrophysics Data System (ADS)

Voitsekhovskii, A. V.; Nesmelov, S. N.; Dzyadukh, S. M.; Varavin, V. S.; Dvoretskii, S. A.; Mikhailov, N. N.; Yakushev, M. V.; Sidorov, G. Yu.

2017-12-01

Metal-insulator-semiconductor (MIS) structures based on n(p)-Hg1-xCdxTe (x = 0.22-0.40) with near-surface variable-gap layers were grown by the molecular-beam epitaxy (MBE) technique on the Si (0 1 3) substrates. Electrical properties of MIS structures were investigated experimentally at various temperatures (9-77 K) and directions of voltage sweep. The ;narrow swing; technique was used to determine the spectra of fast surface states with the exception of hysteresis effects. It is established that the density of fast surface states at the MCT/Al2O3 interface at a minimum does not exceed 3 × 1010 eV-1 × cm-2. For MIS structures based on n-MCT/Si(0 1 3), the differential resistance of the space-charge region in strong inversion mode in the temperature range 50-90 K is limited by the Shockley-Read-Hall generation in the space-charge region.

Application of galvanomagnetic measurements in temperature range 70-300 K to MBE GaAs layers characterization

NASA Astrophysics Data System (ADS)

Wolkenberg, Andrzej; Przeslawski, Tomasz

1996-04-01

Galvanomagnetic measurements were performed on the square shaped samples after Van der Pauw and on the Hall bar at low electric fields app. 1.5 V/cm and magnetic induction app. 6 kG in order to make a comparison between the theoretical and experimental results of the temperature dependence of mobility and resistivity from 70 K to 300 K. A calculation method was obtained of the drift mobility and the Hall mobility in which the scatterings are applied: on ionized impurities, on polar optical phonons, on acoustic phonons (deformation potential), on acoustic phonons (piezoelectric potential) and on dislocations. The elaborated method transformed to a computer program allows us to fit experimental values of the resistivity and the Hall mobility to those calculated. The fitting procedure makes it possible to characterize the quality of the n-type GaAs MBE layer, i.e. the net electron concentration, whole ionized impurities concentration and dislocation density after Read space charge cylinders model. The calculations together with the measurements allow us to obtain compensation ratio value in the layer, too. The influence of the epitaxial layer thickness on layers measurements accuracy in the case of Van der Pauw square probe was investigated. It was stated that in the layers under 3 micrometer the bulk properties are strongly influenced by both surfaces. The results of measurements of the same layer using the Van der Pauw and the Hall bar structure were compared. It was stated that the Hall bar structure only could be used to obtain proper measurements results.

Low temperature grown photoconductive antennas for pulsed 1060 nm excitation: Influence of excess energy on the electron relaxation

NASA Astrophysics Data System (ADS)

Dietz, R. J. B.; Brahm, A.; Velauthapillai, A.; Wilms, A.; Lammers, C.; Globisch, B.; Koch, M.; Notni, G.; Tünnermann, A.; Göbel, T.; Schell, M.

2015-01-01

We investigate properties of MBE grown photoconductive terahertz (THz) antennas based on the InGaAs/InAlAs/InP material system aimed for an excitation wavelength of approx. 1060 nm. Therefore, we analyze several different approaches concerning growth parameters, layer and material compositions as well as doping. The carrier dynamics are probed via transient white-light pump-probe spectroscopy as well as THz Time Domain Spectroscopy (TDS) measurements. We find that the electron capture probability is reduced for higher electron energies. By adjusting the material band gap this can be resolved and lifetimes of 1.3 ps are obtained. These short lifetimes enable the detection of THz TDS spectra with a bandwidth exceeding 4 THz.

Influence of the growth method on degradation of InGaN laser diodes

NASA Astrophysics Data System (ADS)

Bojarska, Agata; Muzioł, Grzegorz; Skierbiszewski, Czesław; Grzanka, Ewa; Wiśniewski, Przemysław; Makarowa, Irina; Czernecki, Robert; Suski, Tadek; Perlin, Piotr

2017-09-01

We demonstrate the influence of the operation current density and temperature on the degradation rate of InGaN laser diodes grown via metalorganic vapor-phase epitaxy (MOVPE) and plasma-assisted molecular beam epitaxy (PAMBE). The degradation rate of the MOVPE devices shows an exponential dependence on the temperature, with an activation energy of 0.38-0.43 eV, and a linear dependence on the operating current density. In comparison, the MBE-grown lasers exhibit a higher activation energy, on the order of 1 eV, and typically a lower degradation rate, resulting in a service time exceeding 50,000 h. We suggest that this difference may be related to the lower concentration of H in the Mg-doped MBE-grown GaN.

Selective MBE growth of hexagonal networks of trapezoidal and triangular GaAs nanowires on patterned (1 1 1)B substrates

NASA Astrophysics Data System (ADS)

Tamai, Isao; Hasegawa, Hideki

2007-04-01

As a combination of novel hardware architecture and novel system architecture for future ultrahigh-density III-V nanodevice LSIs, the authors' group has recently proposed a hexagonal binary decision diagram (BDD) quantum circuit approach where gate-controlled path switching BDD node devices for a single or few electrons are laid out on a hexagonal nanowire network to realize a logic function. In this paper, attempts are made to establish a method to grow highly dense hexagonal nanowire networks for future BDD circuits by selective molecular beam epitaxy (MBE) on (1 1 1)B substrates. The (1 1 1)B orientation is suitable for BDD architecture because of the basic three-fold symmetry of the BDD node device. The growth experiments showed complex evolution of the cross-sectional structures, and it was explained in terms of kinetics determining facet boundaries. Straight arrays of triangular nanowires with 60 nm base width as well as hexagonal arrays of trapezoidal nanowires with a node density of 7.5×10 6 cm -2 were successfully grown with the aid of computer simulation. The result shows feasibility of growing high-density hexagonal networks of GaAs nanowires with precise control of the shape and size.

Surface stability and the selection rules of substrate orientation for optimal growth of epitaxial II-VI semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yin, Wan-Jian; Department of Physics & Astronomy, and Wright Center for Photovoltaics Innovation and Commercialization, The University of Toledo, Toledo, Ohio 43606; Yang, Ji-Hui

2015-10-05

The surface structures of ionic zinc-blende CdTe (001), (110), (111), and (211) surfaces are systematically studied by first-principles density functional calculations. Based on the surface structures and surface energies, we identify the detrimental twinning appearing in molecular beam epitaxy (MBE) growth of II-VI compounds as the (111) lamellar twin boundaries. To avoid the appearance of twinning in MBE growth, we propose the following selection rules for choosing optimal substrate orientations: (1) the surface should be nonpolar so that there is no large surface reconstructions that could act as a nucleation center and promote the formation of twins; (2) the surfacemore » structure should have low symmetry so that there are no multiple equivalent directions for growth. These straightforward rules, in consistent with experimental observations, provide guidelines for selecting proper substrates for high-quality MBE growth of II-VI compounds.« less

Effect of the Graded-Gap Layer Composition on the Formation of n + -n - -p Structures in Boron-Implanted Heteroepitaxial Cd x Hg1- x Te Layers

NASA Astrophysics Data System (ADS)

Talipov, N. Kh.; Voitsekhovskii, А. V.; Grigor'ev, D. V.

2014-07-01

Processes of formation of n + -n--p-structures in boron-implanted heteroepitaxial (HEL) CdxHg1-xTe (CMT) layers of p-type grown by molecular beam epitaxy (HEL CMT MBE) with different compositions of the upper graded-gap layer are studied. It is shown that the surface composition (xs) of HEL CMT MBE significantly affects both the electrical parameters of the implanted layer and the spatial distribution of radiation defects of donor type. For HEL CMT MBE with the small surface composition xs = 0.22-0.33, it is found that the layer electron concentration (Ns) is decreased after saturation with accumulation of radiation defects, as the dose of B+ ions is increased in the range of D = 1ṡ1011-3ṡ1015 сm-2. An increase of the surface composition up to xs = 0.49-0.56 results in a significant decrease in Ns and a disappearance of the saturation of concentration in the whole dose range. The value of Ns monotonically increases with the energy (E) of boron ions and composition xs. It is found that for B+-ion energies E = 20-100 keV, the depth of the surface n + -layer increases with increasing energy and exceeds the total projected path of boron ions. However, in the energy range E = 100-150 keV, the depth of n+-layer stops increasing with the increase of the surface composition. The depth (dn) of a lightly doped n--layer monotonically decreases with increasing energy of boron ions in the entire range of E = 20-150 keV. With increasing dose (D) of B+ ions in the interval D = 1ṡ1014-1ṡ1015сm-2, deep n--layers with dn = 4-5 μm are formed only in the HEL CMT MBE with xs = 0.22-0.33. For the samples with xs = 0.49-0.56, the depth changes in the interval dn = 1.5-2.5 μm. At D ≤ 3ṡ1013сm-2, n + -n--p-structure is not formed for all surface compositions, if implantation is performed at room temperature. However, implantation at T = 130°C leads to the formation of a deep n--layer. Planar photodiodes with the n-p-junction area of A = 35×35 μm2 made on the basis of

Effect of different stages of tensile deformation on micromagnetic parameters in high-strength, low-alloy steel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vaidyanathan, S.; Moorthy, V.; Kalyanasundaram, P.

The influence of tensile deformation on the magnetic Barkhausen emissions (MBE) and hysteresis loop has been studied in a high-strength, low-alloy steel (HSLA) and its weldment. The magnetic measurements were made both in loaded and unloaded conditions for different stress levels. The root-mean-square (RMS) voltage of the MBE has been used for analysis. This study shows that the preyield and postyield deformation can be identified from the change in the MBE profile. The initial elastic deformation showed a linear increase in the MBE level in the loaded condition, and the MBE level remained constant in the unloaded condition. The microplasticmore » yielding, well below the macroyield stress, significantly reduces the MBE, indicating the operation of grain-boundary dislocation sources below the macroyield stress. This is indicated by the slow increase in the MBE level in the loaded condition and the decrease in the MBE level in the unloaded condition. The macroyielding resulted in a significant increase in the MBE level in the loaded condition and, more clearly, in the unloaded condition. The increase in the MBE level during macroyielding has been attributed to the grain rotation phenomenon, in order to maintain the boundary integrity between adjacent grains, which would preferentially align the magnetic domains along the stress direction. This study shows that MBE during tensile deformation can be classified into four stages: (1) perfectly elastic, (2) microplastic yielding, (3) macroyielding, and (4) progressive plastic deformation. A multimagnetic parameter approach, combining the hysteresis loop and MBE, has been suggested to evaluate the residual stresses.« less

Establishing the need and identifying goals for a curriculum in medical business ethics: a survey of students and residents at two medical centers in Missouri.

PubMed

Kraus, Elena M; Bakanas, Erin; Gursahani, Kamal; DuBois, James M

2014-10-09

In recent years, issues in medical business ethics (MBE), such as conflicts of interest (COI), Medicare fraud and abuse, and the structure and functioning of reimbursement systems, have received significant attention from the media and professional associations in the United States. As a result of highly publicized instances of financial interests altering physician decision-making, major professional organizations and government bodies have produced reports and guidelines to encourage self-regulation and impose rules to limit physician relationships with for-profit entities. Nevertheless, no published curricula exist in the area of MBE. This study aimed to establish a baseline level of knowledge and the educational goals medical students and residents prioritize in the area of MBE. 732 medical students and 380 residents at two academic medical centers in the state of Missouri, USA, completed a brief survey indicating their awareness of major MBE guidance documents, knowledge of key MBE research, beliefs about the goals of an education in MBE, and the areas of MBE they were most interested in learning more about. Medical students and residents had little awareness of recent and major reports on MBE topics, and had minimal knowledge of basic MBE facts. Residents scored statistically better than medical students in both of these areas. Medical students and residents were in close agreement regarding the goals of an MBE curriculum. Both groups showed significant interest in learning more about MBE topics with an emphasis on background topics such as "the business aspects of medicine" and "health care delivery systems". The content of major reports by professional associations and expert bodies has not trickled down to medical students and residents, yet both groups are interested in learning more about MBE topics. Our survey suggests potentially beneficial ways to frame and embed MBE topics into the larger framework of medical education.

Thalassospira alkalitolerans sp. nov. and Thalassospira mesophila sp. nov., isolated from a decaying bamboo sunken in the marine environment, and emended description of the genus Thalassospira.

PubMed

Tsubouchi, Taishi; Ohta, Yukari; Haga, Takuma; Usui, Keiko; Shimane, Yasuhiro; Mori, Kozue; Tanizaki, Akiko; Adachi, Akiko; Kobayashi, Kiwa; Yukawa, Kiyotaka; Takagi, Emiko; Tame, Akihiro; Uematsu, Katsuyuki; Maruyama, Tadashi; Hatada, Yuji

2014-01-01

Two marine bacteria, designated strains MBE#61(T) and MBE#74(T), were isolated from a piece of sunken bamboo in the marine environment in Japan. Both of these strains were Gram-stain-negative, but had different cell shapes: MBE#61(T) was spiral, whereas MBE#74(T) was rod-shaped. The temperature, pH and salt concentration ranges for growth of strain MBE#61(T) were 4-38 °C (optimal at 32 °C), pH 4.5-11.0 (optimal at pH 7.0-8.0) and 1-11 % (optimal at 2 %) NaCl, whereas those of strain MBE#74(T) were 4-36 °C (optimal at 30 °C), pH 4.0-10.5 (optimal at pH 7.0-8.0) and 1-12 % (optimal at 4 %) NaCl. Phylogenetic analysis based on partial 16S rRNA gene sequences revealed that both strains belong to the genus Thalassospira within the class Alphaproteobacteria. Similarity between the 16S rRNA gene sequence of strain MBE#61(T) and those of the type strains of species of the genus Thalassospira was 97.5-99.0 %, and that of strain MBE#74(T) was 96.9-98.6 %; these two isolates were most closely related to Thalassospira lucentensis QMT2(T). However, the DNA-DNA hybridization values between T. lucentensis QMT2(T) and strain MBE#61(T) or MBE#74(T) were only 16.0 % and 7.1 %, respectively. The DNA G+C content of strain MBE#61(T) was 54.4 mol%, and that of strain MBE#74(T) was 55.9 mol%. The predominant isoprenoid quinone of the two strains was Q-10 (MBE#61(T), 97.3 %; MBE#74(T), 93.5 %). The major cellular fatty acids of strain MBE#61(T) were C18 : 1ω7c (31.1 %), summed feature 3 comprising C16 : 0ω7c/iso-C15 : 0 2-OH (26.1 %) and C16 : 0 (20.9 %); those of strain MBE#74(T) were C16 : 0 (26.2 %), C17 : 0 cyclo (19.9 %) and C18 : 1ω7c (12.1 %). On the basis of these results, strain MBE#61(T) and strain MBE#74(T) are considered to represent novel species of the genus Thalassospira, for which names Thalassospira alkalitolerans sp. nov. and Thalassospira mesophila sp. nov. are proposed. The type strains are MBE#61(T) (�

Thermoelectric properties of epitaxial β-FeSi2 thin films grown on Si(111) substrates with various film qualities

NASA Astrophysics Data System (ADS)

Watanabe, Kentaro; Taniguchi, Tatsuhiko; Sakane, Shunya; Aoki, Shunsuke; Suzuki, Takeyuki; Fujita, Takeshi; Nakamura, Yoshiaki

2017-05-01

Si-based epitaxial β-FeSi2 thin films are attractive as materials for on-chip thermoelectric power generators. We investigated the structure, crystallinity, and thermoelectric properties of β-FeSi2 thin films epitaxially grown on Si(111) substrates by using three different techniques: conventional reactive deposition epitaxy followed by molecular beam epitaxy (RDE+MBE), solid phase epitaxy (SPE) based on codeposition of Fe and Si presented previously, and SPE followed by MBE (SPE+MBE) presented newly by this work. Their epitaxial growth temperatures were fixed at 530 °C for comparison. RDE+MBE thin films exhibited high crystalline quality, but rough surfaces and rugged β-FeSi2/Si(111) interfaces. On the other hand, SPE thin films showed flat surfaces and abrupt β-FeSi2/Si(111) interfaces but low crystallinity. We found that SPE+MBE thin films realized crystallinity higher than SPE thin films, and also had flatter surfaces and sharper interfaces than RDE+MBE thin films. In SPE+MBE thin film growth, due to the initial SPE process with low temperature codeposition, thermal interdiffusion of Fe and Si was suppressed, resulting in the surface flatness and abrupt interface. Second high temperature MBE process improved the crystallinity. We also investigated thermoelectric properties of these β-FeSi2 thin films. Structural factors affecting the thermoelectric properties of RDE+MBE, SPE, and SPE+MBE thin films were investigated.

Do explicit memory manipulations affect the memory blocking effect?

PubMed

Landau, Joshua D; Leynes, P Andrew

2006-01-01

The memory blocking effect (MBE) occurs when people are prevented from completing word fragments because they studied orthographically similar words. Across 3 experiments, we investigated how manipulations that influence explicit memory tasks would influence the MBE. Although a significant MBE was observed in all 3 experiments, manipulating depth of processing (Experiment 1), time to complete the fragments (Experiment 2), and awareness of the MBE (Experiment 3) did not change the magnitude of the MBE. We discuss these results in the context of a suppression mechanism involved in retrieval-induced forgetting.

Getting the Right Answers for the Right Reasons: Toward Predictive Molecular Simulations of Water with Many-Body Potential Energy Functions.

PubMed

Paesani, Francesco

2016-09-20

The central role played by water in fundamental processes relevant to different disciplines, including chemistry, physics, biology, materials science, geology, and climate research, cannot be overemphasized. It is thus not surprising that, since the pioneering work by Stillinger and Rahman, many theoretical and computational studies have attempted to develop a microscopic description of the unique properties of water under different thermodynamic conditions. Consequently, numerous molecular models based on either molecular mechanics or ab initio approaches have been proposed over the years. However, despite continued progress, the correct prediction of the properties of water from small gas-phase clusters to the liquid phase and ice through a single molecular model remains challenging. To large extent, this is due to the difficulties encountered in the accurate modeling of the underlying hydrogen-bond network in which both number and strength of the hydrogen bonds vary continuously as a result of a subtle interplay between energetic, entropic, and nuclear quantum effects. In the past decade, the development of efficient algorithms for correlated electronic structure calculations of small molecular complexes, accompanied by tremendous progress in the analytical representation of multidimensional potential energy surfaces, opened the doors to the design of highly accurate potential energy functions built upon rigorous representations of the many-body expansion (MBE) of the interaction energies. This Account provides a critical overview of the performance of the MB-pol many-body potential energy function through a systematic analysis of energetic, structural, thermodynamic, and dynamical properties as well as of vibrational spectra of water from the gas to the condensed phase. It is shown that MB-pol achieves unprecedented accuracy across all phases of water through a quantitative description of each individual term of the MBE, with a physically correct representation

Study of current collapse by quiescent-bias-stresses in rf-plasma assisted MBE grown AlGaN/GaN high-electron-mobility transistors

NASA Astrophysics Data System (ADS)

Arulkumaran, S.; Ng, G. I.; Lee, C. H.; Liu, Z. H.; Radhakrishnan, K.; Dharmarasu, N.; Sun, Z.

2010-11-01

Studies on the influence of quiescent-gate ( Vgs0) and quiescent-drain ( Vds0) bias stresses in rf-plasma MBE grown AlGaN/GaN high-electron-mobility transistors (HEMTs) were performed. The increase of drain current ( ID) collapse by quiescent-bias-stress in AlGaN/GaN HEMTs were observed using pulsed (pulse width = 200 ns; pulse period = 1 ms) IDS- VDS characteristics. The Si 3N 4 passivation suppressed about 80% ID collapse in quiescent-bias-point stressed HEMTs. The remaining 20% ID collapse were not suppressed which may be coming from buffer-related traps. However, more than 10% of ID collapse suppression was observed on un-stressed or fresh-HEMTs. Similarly, improved cut-off frequency ( fT), maximum oscillation frequency ( fmax) and device output power ( Pout) values were also observed on the un-stressed HEMTs. The Si 3N 4 passivation completely suppressed the ID collapse in un-stressed or fresh-HEMTs which leads to 70% improvement in fT and 60% improvement in the device Pout. The Si 3N 4 passivation did not completely suppress ID collapse in the quiescent-bias stressed-HEMTs. This may be due to the generation of additional surface-related traps in the HEMTs by quiescent-bias-stresses.

Growth and properties of semi-metallic and semiconducting phases of MoTe2 monolayer by molecular-beam epitaxy

NASA Astrophysics Data System (ADS)

Chen, Jinglei; Wang, Guanyong; Tang, Yanan; Xu, Jinpeng; Dai, Xianqi; Jia, Jinfeng; Ho, Wingkin; Xie, Maohai

Hexagonal (2H) and distorted octahedral (1T') phases are the two common structures of monolayer MoTe2 showing, respectively, semiconducting and semi-metallic properties. The formation energies between the two structures of MoTe2 are almost equal, so there is a high chance to tune the structures of MoTe2 and to bring in new applications such as phase-change electronics. In this work, we report growth of both 2H and 1T' MoTe2 ML by molecular-beam epitaxy (MBE) and demonstrate the tunability of the structural phases by changing the growth conditions of MBE. We present experimental and theoretical evidences showing the important role of Te surface adsorption in promoting and stabilizing the otherwise metastable 1T'-MoTe2 during MBE. By scanning tunneling microscopy and spectroscopy, we also reveal quantum dot states and quantum inter-valley interference patterns in the 2H and 1T' domains, respectively. RGC(HKU9/CRF/13G), the Ministry of Science and Technology of China(2013CB921902), NSFC (11521404, 11227404), NSFC (11504334 and U1404109).

Understanding the many-body expansion for large systems. III. Critical role of four-body terms, counterpoise corrections, and cutoffs.

PubMed

Liu, Kuan-Yu; Herbert, John M

2017-10-28

Papers I and II in this series [R. M. Richard et al., J. Chem. Phys. 141, 014108 (2014); K. U. Lao et al., ibid. 144, 164105 (2016)] have attempted to shed light on precision and accuracy issues affecting the many-body expansion (MBE), which only manifest in larger systems and thus have received scant attention in the literature. Many-body counterpoise (CP) corrections are shown to accelerate convergence of the MBE, which otherwise suffers from a mismatch between how basis-set superposition error affects subsystem versus supersystem calculations. In water clusters ranging in size up to (H 2 O) 37 , four-body terms prove necessary to achieve accurate results for both total interaction energies and relative isomer energies, but the sheer number of tetramers makes the use of cutoff schemes essential. To predict relative energies of (H 2 O) 20 isomers, two approximations based on a lower level of theory are introduced and an ONIOM-type procedure is found to be very well converged with respect to the appropriate MBE benchmark, namely, a CP-corrected supersystem calculation at the same level of theory. Results using an energy-based cutoff scheme suggest that if reasonable approximations to the subsystem energies are available (based on classical multipoles, say), then the number of requisite subsystem calculations can be reduced even more dramatically than when distance-based thresholds are employed. The end result is several accurate four-body methods that do not require charge embedding, and which are stable in large basis sets such as aug-cc-pVTZ that have sometimes proven problematic for fragment-based quantum chemistry methods. Even with aggressive thresholding, however, the four-body approach at the self-consistent field level still requires roughly ten times more processors to outmatch the performance of the corresponding supersystem calculation, in test cases involving 1500-1800 basis functions.

Understanding the many-body expansion for large systems. III. Critical role of four-body terms, counterpoise corrections, and cutoffs

NASA Astrophysics Data System (ADS)

Liu, Kuan-Yu; Herbert, John M.

2017-10-01

Papers I and II in this series [R. M. Richard et al., J. Chem. Phys. 141, 014108 (2014); K. U. Lao et al., ibid. 144, 164105 (2016)] have attempted to shed light on precision and accuracy issues affecting the many-body expansion (MBE), which only manifest in larger systems and thus have received scant attention in the literature. Many-body counterpoise (CP) corrections are shown to accelerate convergence of the MBE, which otherwise suffers from a mismatch between how basis-set superposition error affects subsystem versus supersystem calculations. In water clusters ranging in size up to (H2O)37, four-body terms prove necessary to achieve accurate results for both total interaction energies and relative isomer energies, but the sheer number of tetramers makes the use of cutoff schemes essential. To predict relative energies of (H2O)20 isomers, two approximations based on a lower level of theory are introduced and an ONIOM-type procedure is found to be very well converged with respect to the appropriate MBE benchmark, namely, a CP-corrected supersystem calculation at the same level of theory. Results using an energy-based cutoff scheme suggest that if reasonable approximations to the subsystem energies are available (based on classical multipoles, say), then the number of requisite subsystem calculations can be reduced even more dramatically than when distance-based thresholds are employed. The end result is several accurate four-body methods that do not require charge embedding, and which are stable in large basis sets such as aug-cc-pVTZ that have sometimes proven problematic for fragment-based quantum chemistry methods. Even with aggressive thresholding, however, the four-body approach at the self-consistent field level still requires roughly ten times more processors to outmatch the performance of the corresponding supersystem calculation, in test cases involving 1500-1800 basis functions.

Scanning tunneling microscope study of GaAs(001) surfaces grown by migration enhanced epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, J.; Gallagher, M.C.; Willis, R.F.

We report an investigation of the morphology of p-type GaAs(001) surfaces using scanning tunneling microscopy (STM). The substrates were prepared using two methods: migration enhanced epitaxy (MEE) and standard molecular-beam epitaxy (MBE). The STM measurements were performed ex situ using As decapping. Analysis indicates that the overall step density of the MEE samples decreases as the growth temperature is increased. Nominally flat samples grown at 300{degrees}C exhibited step densities of 10.5 steps/1000 {Angstrom} along [ 110] dropping to 2.5 steps at 580{degrees}C. MEE samples exhibited a lower step density than MBE samples. However as-grown surfaces exhibited a larger distribution ofmore » step heights. Annealing the samples reduced the step height distribution exposing fewer atomic layers. Samples grown by MEE at 580{degrees}C and annealed for 2 min displayed the lowest step density and the narrowest step height distribution. All samples displayed an anisotropic step density. We found a ratio of A-type to B-type steps of between 2 and 3 which directly reflects the difference in the incorporation energy at steps. The aspect ratio increased slightly with growth temperature. We found a similar aspect ratio on samples grown by MBE. This indicates that anisotropic growth during MEE, like MBE, is dominated by incorporation kinetics. MEE samples grown at 580{degrees}C and capped immediately following growth exhibited a number of {open_quotes}holes{close_quotes} in the surface. The holes could be eliminated by annealing the surface prior to quenching. 20 refs., 3 figs., 1 tab.« less

Growth and Structure of High-Temperature Superconducting Thin Films

NASA Astrophysics Data System (ADS)

Achutharaman, Vedapuram Sankar

High temperature superconducting thin films with atomic scale perfection are required for technological applications and scientific studies on the mechanism of superconductivity. Ozone assisted molecular beam epitaxy (MBE) has been shown to produce in-situ superconducting thin films. To obtain a well-controlled and reproducible process, some components such as the substrate heater and the substrate holder have to be designed to be compatible with high oxygen partial pressures. Also, to ensure precise stoichiometry and precipitate-free films, evaporation sources and temperature controllers have to be designed for better temperature stability. The investigation of the MBE process and the thin films grown by MBE are required to obtain a better understanding of the growth parameters such as the composition of the film, substrate surface structure, substrate temperature and ozone partial pressure. This can be obtained by dynamically monitoring the growth process by in-situ characterization techniques such as reflection high energy electron diffraction (RHEED). Intensity oscillations of the specular RHEED beam have been observed during the growth of RBa_2Cu_3 O_7 (R = Y,Dy) films on SrTiO _3. A model for the origin of these RHEED intensity oscillations will be proposed from extensive RHEED intensity studies. A mechanism for growth of these oxides by physical vapor deposition techniques such as MBE and pulsed laser deposition will also be developed. To verify both the models, the growth of the superconductors will be simulated by the Monte Carlo method and compared with experimental RHEED observations.

Strain relaxation of CdTe on Ge studied by medium energy ion scattering

NASA Astrophysics Data System (ADS)

Pillet, J. C.; Pierre, F.; Jalabert, D.

2016-10-01

We have used the medium energy ion scattering (MEIS) technique to assess the strain relaxation in molecular-beam epitaxial (MBE) grown CdTe (2 1 1)/Ge (2 1 1) system. A previous X-ray diffraction study, on 10 samples of the same heterostructure having thicknesses ranging from 25 nm to 10 μm has allowed the measurement of the strain relaxation on a large scale. However, the X-ray diffraction measurements cannot achieve a stress measurement in close proximity to the CdTe/Ge interface at the nanometer scale. Due to the huge lattice misfit between the CdTe and Ge, a high degree of disorder is expected at the interface. The MEIS in channeling mode is a good alternative in order to profile defects with a high depth resolution. For a 21 nm thick CdTe layer, we observed, at the interface, a high density of Cd and/or Te atoms moved from their expected crystallographic positions followed by a rapid recombination of defects. Strain relaxation mechanisms in the vicinity of the interface are discussed

Electronic Transport in Ultrathin Heterostructures.

DTIC Science & Technology

1981-10-01

heterostructures, superlattices, diffusion-enhanced disorder, transport properties, molecular beam epitaxy (MBE), photoluminescence, optical absorption...tion of single and multilayer GatlAs/GaAs heterostructures by metalorganic chemical vapor deposition (MJCVD) and molecular beam epitaxy (MBE) has...fundamental nature of these clusters and their relevance to other epitaxial techniques such as molecular beam epitaxy (MBE). To further varify or

Publisher Correction: Mutations in Vps15 perturb neuronal migration in mice and are associated with neurodevelopmental disease in humans.

PubMed

Gstrein, Thomas; Edwards, Andrew; Přistoupilová, Anna; Leca, Ines; Breuss, Martin; Pilat-Carotta, Sandra; Hansen, Andi H; Tripathy, Ratna; Traunbauer, Anna K; Hochstoeger, Tobias; Rosoklija, Gavril; Repic, Marco; Landler, Lukas; Stránecký, Viktor; Dürnberger, Gerhard; Keane, Thomas M; Zuber, Johannes; Adams, David J; Flint, Jonathan; Honzik, Tomas; Gut, Marta; Beltran, Sergi; Mechtler, Karl; Sherr, Elliott; Kmoch, Stanislav; Gut, Ivo; Keays, David A

2018-06-06

In the supplementary information PDF originally posted, there were discrepancies from the integrated supplementary information that appeared in the HTML; the former has been corrected as follows. In the legend to Supplementary Fig. 2c, "major organs of the mouse" has been changed to "major organs of the adult mouse." In the legend to Supplementary Fig. 6d,h, "At E14.5 Mbe/Mbe mutants have a smaller percentage of Brdu positive cells in bin 3" has been changed to "At E14.5 Mbe/Mbe mutants have a higher percentage of Brdu positive cells in bin 3."

Development of HgCdTe large format MBE arrays and noise-free high speed MOVPE EAPD arrays for ground based NIR astronomy

NASA Astrophysics Data System (ADS)

Finger, G.; Baker, I.; Downing, M.; Alvarez, D.; Ives, D.; Mehrgan, L.; Meyer, M.; Stegmeier, J.; Weller, H. J.

2017-11-01

Large format near infrared HgCdTe 2Kx2K and 4Kx4K MBE arrays have reached a level of maturity which meets most of the specifications required for near infrared (NIR) astronomy. The only remaining problem is the persistence effect which is device specific and not yet fully under control. For ground based multi-object spectroscopy on 40 meter class telescopes larger pixels would be advantageous. For high speed near infrared fringe tracking and wavefront sensing the only way to overcome the CMOS noise barrier is the amplification of the photoelectron signal inside the infrared pixel by means of the avalanche gain. A readout chip for a 320x256 pixel HgCdTe eAPD array will be presented which has 32 parallel video outputs being arranged in such a way that the full multiplex advantage is also available for small sub-windows. In combination with the high APD gain this allows reducing the readout noise to the subelectron level by applying nondestructive readout schemes with subpixel sampling. Arrays grown by MOVPE achieve subelectron readout noise and operate with superb cosmetic quality at high APD gain. Efforts are made to reduce the dark current of those arrays to make this technology also available for large format focal planes of NIR instruments offering noise free detectors for deep exposures. The dark current of the latest MOVPE eAPD arrays is already at a level adequate for noiseless broad and narrow band imaging in scientific instruments.

Wavelength-scale Microlasers based on VCSEL-Photonic Crystal Architecture

DTIC Science & Technology

2015-01-20

molecular beam epitaxy , MBE). We will also assume the triangular lattice of air...Abbreviations, and Acronyms InP: indium phosphide InGaAsP: indium gallium arsenide phosphide MBE: molecular beam epiitaxy VCSEL : vertical cavity...substrates and were grown by MBE. Electron beam lithography and reactive ion etching was used to deep‐etch the holes of the PhC‐ VCSELS ,

Perceptions and Practices of Mass Bat Exposure Events in the Setting of Rabies Among U.S. Public Health Agencies

PubMed Central

Hsu, C. H.; Brown, C. M.; Murphy, J. M.; Haskell, M. G.; Williams, C.; Feldman, K.; Mitchell, K.; Blanton, J. D.; Petersen, B. W.; Wallace, R. M.

2017-01-01

Summary Current guidelines in the setting of exposures to potentially rabid bats established by the Advisory Committee on Immunization Practices (ACIP) address post-exposure prophylaxis (PEP) administration in situations where a person may not be aware that a bite or direct contact has occurred and the bat is not available for diagnostic testing. These include instances when a bat is discovered in a room where a person awakens from sleep, is a child without an adult witness, has a mental disability or is intoxicated. The current ACIP guidelines, however, do not address PEP in the setting of multiple persons exposed to a bat or a bat colony, otherwise known as mass bat exposure (MBE) events. Due to a dearth of recommendations for response to these events, the reported reactions by public health agencies have varied widely. To address this perceived limitation, a survey of 45 state public health agencies was conducted to characterize prior experiences with MBE and practices to mitigate the public health risks. In general, most states (69% of the respondents) felt current ACIP guidelines were unclear in MBE scenarios. Thirty-three of the 45 states reported prior experience with MBE, receiving an average of 16.9 MBE calls per year and an investment of 106.7 person-hours annually on MBE investigations. PEP criteria, investigation methods and the experts recruited in MBE investigations varied between states. These dissimilarities could reflect differences in experience, scenario and resources. The lack of consistency in state responses to potential mass exposures to a highly fatal disease along with the large contingent of states dissatisfied with current ACIP guidance warrants the development of national guidelines in MBE settings. PMID:27389926

Twenty years of molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Cho, A. Y.

1995-05-01

The term "molecular beam epitaxy" (MBE) was first used in one of our crystal growth papers in 1970, after having conducted extensive surface physics studies in the late 1960's of the interaction of atomic and molecular beams with solid surfaces. The unique feature of MBE is the ability to prepare single crystal layers with atomic dimensional precision. MBE sets the standard for epitaxial growth and has made possible semiconductor structures that could not be fabricated with either naturally existing materials or by other crystal growth techniques. MBE led the crystal growth technologies when it prepared the first semiconductor quantum well and superlattice structures that gave unexpected and exciting electrical and optical properties. For example, the discovery of the fractional quantized Hall effect. It brought experimental quantum physics to the classroom, and practically all major universities throughout the world are now equipped with MBE systems. The fundamental principles demonstrated by the MBE growth of III-V compound semiconductors have also been applied to the growth of group IV, II-VI, metal, and insulating materials. For manufacturing, the most important criteria are uniformity, precise control of the device structure, and reproducibility. MBE has produced more lasers (3 to 5 million per month for compact disc application) than any other crystal growth technique in the world. New directions for MBE are to incorporate in-situ, real-time monitoring capabilities so that complex structures can be precisely "engineered". In the future, as environmental concerns increase, the use of toxic arsine and phosphine may be limited. Successful use of valved cracker cells for solid arsenic and phosphorus has already produced InP based injection lasers.

Response of the carbon cycle in an intermediate complexity model to the different climate configurations of the last nine interglacials

NASA Astrophysics Data System (ADS)

Bouttes, Nathaelle; Swingedouw, Didier; Roche, Didier M.; Sanchez-Goni, Maria F.; Crosta, Xavier

2018-03-01

Atmospheric CO2 levels during interglacials prior to the Mid-Brunhes Event (MBE, ˜ 430 ka BP) were around 40 ppm lower than after the MBE. The reasons for this difference remain unclear. A recent hypothesis proposed that changes in oceanic circulation, in response to different external forcings before and after the MBE, might have increased the ocean carbon storage in pre-MBE interglacials, thus lowering atmospheric CO2. Nevertheless, no quantitative estimate of this hypothesis has been produced up to now. Here we use an intermediate complexity model including the carbon cycle to evaluate the response of the carbon reservoirs in the atmosphere, ocean and land in response to the changes of orbital forcings, ice sheet configurations and atmospheric CO2 concentrations over the last nine interglacials. We show that the ocean takes up more carbon during pre-MBE interglacials in agreement with data, but the impact on atmospheric CO2 is limited to a few parts per million. Terrestrial biosphere is simulated to be less developed in pre-MBE interglacials, which reduces the storage of carbon on land and increases atmospheric CO2. Accounting for different simulated ice sheet extents modifies the vegetation cover and temperature, and thus the carbon reservoir distribution. Overall, atmospheric CO2 levels are lower during these pre-MBE simulated interglacials including all these effects, but the magnitude is still far too small. These results suggest a possible misrepresentation of some key processes in the model, such as the magnitude of ocean circulation changes, or the lack of crucial mechanisms or internal feedbacks, such as those related to permafrost, to fully account for the lower atmospheric CO2 concentrations during pre-MBE interglacials.

Effect of tensile deformation on micromagnetic parameters in 0.2% carbon steel and 2.25Cr-1Mo steel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moorthy, V.; Vaidyanathan, S.; Jayakumar, T.

The influence of prior tensile deformation on the magnetic Barkhausen emission (MBE) and the hysteresis (B-H) curve has been studied in 0.2% carbon steel and 2.25Cr-1Mo steel under different tempered conditions. This study shows that the micromagnetic parameters can be used to identify the four stages of deformation, namely (1) perfectly elastic, (2) microplastic yielding, (3) macroyielding and (4) progressive plastic deformation. However, it is observed that the MBE profile shows more distinct changes at different stages of tensile deformation than the hysteresis curve. It has been established that the beginning of microplastic yielding and macroyielding can be identified frommore » the MBE profile which is not possible from the stress-strain plot. The onset of microplastic yielding can be identified from the decrease in the MBE peak height. The macroyielding can be identified from the merging of the initially present two-peak MBE profile into a single central peak with relatively higher peak height and narrow profile width. The difference between the variation of MBE and hysteresis curve parameters with strain beyond macroyielding indicates the difference in the deformation state of the surface and bulk of the sample.« less

The boron implantation in the varied zone MBE MCT epilayer

NASA Astrophysics Data System (ADS)

Voitsekhovskii, Alexander V.; Grigor'ev, Denis V.; Kokhanenko, Andrey P.; Korotaev, Alexander G.; Sidorov, Yuriy G.; Varavin, Vasiliy S.; Dvoretsky, Sergey A.; Mikhailov, Nicolay N.; Talipov, Niyaz Kh.

2005-09-01

In the paper experimental results on boron implantation of the CdxHg1-xTe epilayers with various composition near surface of the material are discussed. The electron concentration in the surface layer after irradiation vs irradiation dose and ion energy are investigated for range of doses 1011 - 3•1015 cm-2 and energies of 20 - 150 keV. Also the results of the electrical active defects distribution measurement, carried out by differential Hall method, after boron implantation are represented. Consideration of the received data shows, that composition gradient influence mainly on the various dynamics of accumulation of electric active radiation defects. The electric active defects distribution analysis shows, that the other factors are negligible.

Detection and evaluation of embedded mild steel can material into 18 Cr-oxide dispersion strengthened steel tubes by magnetic Barkhausen emission

NASA Astrophysics Data System (ADS)

Kishore, G. V. K.; Kumar, Anish; Rajkumar, K. V.; Purnachandra Rao, B.; Pramanik, Debabrata; Kapoor, Komal; Jha, Sanjay Kumar

2017-12-01

The paper presents a new methodology for detection and evaluation of mild steel (MS) can material embedded into oxide dispersion strengthened (ODS) steel tubes by magnetic Barkhausen emission (MBE) technique. The high frequency MBE measurements (125 Hz sweep frequency and 70-200 kHz analyzing frequency) are found to be very sensitive for detection of presence of MS on the surface of the ODS steel tube. However, due to a shallow depth of information from the high frequency MBE measurements, it cannot be used for evaluation of the thickness of the embedded MS. The low frequency MBE measurements (0.5 Hz sweep frequency and 2-20 kHz analyzing frequency) indicate presence of two MBE RMS voltage peaks corresponding to the MS and the ODS steel. The ratio of the two peaks changes with the thickness of the MS and hence, can be used for measurement of the thickness of the MS layer.

Enhancing the far-ultraviolet sensitivity of silicon complementary metal oxide semiconductor imaging arrays

NASA Astrophysics Data System (ADS)

Retherford, Kurt D.; Bai, Yibin; Ryu, Kevin K.; Gregory, James A.; Welander, Paul B.; Davis, Michael W.; Greathouse, Thomas K.; Winters, Gregory S.; Suntharalingam, Vyshnavi; Beletic, James W.

2015-10-01

We report our progress toward optimizing backside-illuminated silicon P-type intrinsic N-type complementary metal oxide semiconductor devices developed by Teledyne Imaging Sensors (TIS) for far-ultraviolet (UV) planetary science applications. This project was motivated by initial measurements at Southwest Research Institute of the far-UV responsivity of backside-illuminated silicon PIN photodiode test structures, which revealed a promising QE in the 100 to 200 nm range. Our effort to advance the capabilities of thinned silicon wafers capitalizes on recent innovations in molecular beam epitaxy (MBE) doping processes. Key achievements to date include the following: (1) representative silicon test wafers were fabricated by TIS, and set up for MBE processing at MIT Lincoln Laboratory; (2) preliminary far-UV detector QE simulation runs were completed to aid MBE layer design; (3) detector fabrication was completed through the pre-MBE step; and (4) initial testing of the MBE doping process was performed on monitoring wafers, with detailed quality assessments.

Perceptions and Practices of Mass Bat Exposure Events in the Setting of Rabies Among U.S. Public Health Agencies.

PubMed

Hsu, C H; Brown, C M; Murphy, J M; Haskell, M G; Williams, C; Feldman, K; Mitchell, K; Blanton, J D; Petersen, B W; Wallace, R M

2017-03-01

Current guidelines in the setting of exposures to potentially rabid bats established by the Advisory Committee on Immunization Practices (ACIP) address post-exposure prophylaxis (PEP) administration in situations where a person may not be aware that a bite or direct contact has occurred and the bat is not available for diagnostic testing. These include instances when a bat is discovered in a room where a person awakens from sleep, is a child without an adult witness, has a mental disability or is intoxicated. The current ACIP guidelines, however, do not address PEP in the setting of multiple persons exposed to a bat or a bat colony, otherwise known as mass bat exposure (MBE) events. Due to a dearth of recommendations for response to these events, the reported reactions by public health agencies have varied widely. To address this perceived limitation, a survey of 45 state public health agencies was conducted to characterize prior experiences with MBE and practices to mitigate the public health risks. In general, most states (69% of the respondents) felt current ACIP guidelines were unclear in MBE scenarios. Thirty-three of the 45 states reported prior experience with MBE, receiving an average of 16.9 MBE calls per year and an investment of 106.7 person-hours annually on MBE investigations. PEP criteria, investigation methods and the experts recruited in MBE investigations varied between states. These dissimilarities could reflect differences in experience, scenario and resources. The lack of consistency in state responses to potential mass exposures to a highly fatal disease along with the large contingent of states dissatisfied with current ACIP guidance warrants the development of national guidelines in MBE settings. Published 2016. This article is a U.S. Government work and is in the public domain in the USA. Zoonoses and Public Health published by Blackwell Verlag GmbH.

A Comparative Study on Phytochemical Profiles and Biological Activities of Sclerocarya birrea (A.Rich.) Hochst Leaf and Bark Extracts

PubMed Central

Russo, Daniela; Miglionico, Rocchina; Carmosino, Monica; Bisaccia, Faustino; Armentano, Maria Francesca

2018-01-01

Sclerocarya birrea (A.Rich.) Hochst (Anacardiaceae) is a savannah tree that has long been used in sub-Saharan Africa as a medicinal remedy for numerous ailments. The purpose of this study was to increase the scientific knowledge about this plant by evaluating the total content of polyphenols, flavonoids, and tannins in the methanol extracts of the leaves and bark (MLE and MBE, respectively), as well as the in vitro antioxidant activity and biological activities of these extracts. Reported results show that MLE is rich in flavonoids (132.7 ± 10.4 mg of quercetin equivalents/g), whereas MBE has the highest content of tannins (949.5 ± 29.7 mg of tannic acid equivalents/g). The antioxidant activity was measured using four different in vitro tests: β-carotene bleaching (BCB), 2,2′-azino-bis(3-ethylbenzothiazoline-6-sulfonic acid) (ABTS), O2−•, and nitric oxide (NO•) assays. In all cases, MBE was the most active compared to MLE and the standards used (Trolox and ascorbic acid). Furthermore, MBE and MLE were tested to evaluate their activity in HepG2 and fibroblast cell lines. A higher cytotoxic activity of MBE was evidenced and confirmed by more pronounced alterations in cell morphology. MBE induced cell death, triggering the intrinsic apoptotic pathway by reactive oxygen species (ROS) generation, which led to a loss of mitochondrial membrane potential with subsequent cytochrome c release from the mitochondria into the cytosol. Moreover, MBE showed lower cytotoxicity in normal human dermal fibroblasts, suggesting its potential as a selective anticancer agent. PMID:29316691

A Comparative Study on Phytochemical Profiles and Biological Activities of Sclerocarya birrea (A.Rich.) Hochst Leaf and Bark Extracts.

PubMed

Russo, Daniela; Miglionico, Rocchina; Carmosino, Monica; Bisaccia, Faustino; Andrade, Paula B; Valentão, Patrícia; Milella, Luigi; Armentano, Maria Francesca

2018-01-08

Sclerocarya birrea (A.Rich.) Hochst (Anacardiaceae) is a savannah tree that has long been used in sub-Saharan Africa as a medicinal remedy for numerous ailments. The purpose of this study was to increase the scientific knowledge about this plant by evaluating the total content of polyphenols, flavonoids, and tannins in the methanol extracts of the leaves and bark (MLE and MBE, respectively), as well as the in vitro antioxidant activity and biological activities of these extracts. Reported results show that MLE is rich in flavonoids (132.7 ± 10.4 mg of quercetin equivalents/g), whereas MBE has the highest content of tannins (949.5 ± 29.7 mg of tannic acid equivalents/g). The antioxidant activity was measured using four different in vitro tests: β-carotene bleaching (BCB), 2,2'-azino-bis(3-ethylbenzothiazoline-6-sulfonic acid) (ABTS), O₂ -• , and nitric oxide (NO • ) assays. In all cases, MBE was the most active compared to MLE and the standards used (Trolox and ascorbic acid). Furthermore, MBE and MLE were tested to evaluate their activity in HepG2 and fibroblast cell lines. A higher cytotoxic activity of MBE was evidenced and confirmed by more pronounced alterations in cell morphology. MBE induced cell death, triggering the intrinsic apoptotic pathway by reactive oxygen species (ROS) generation, which led to a loss of mitochondrial membrane potential with subsequent cytochrome c release from the mitochondria into the cytosol. Moreover, MBE showed lower cytotoxicity in normal human dermal fibroblasts, suggesting its potential as a selective anticancer agent.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prakash, Abhinav, E-mail: praka019@umn.edu; Dewey, John; Yun, Hwanhui

Owing to its high room-temperature electron mobility and wide bandgap, BaSnO{sub 3} has recently become of significant interest for potential room-temperature oxide electronics. A hybrid molecular beam epitaxy (MBE) approach for the growth of high-quality BaSnO{sub 3} films is developed in this work. This approach employs hexamethylditin as a chemical precursor for tin, an effusion cell for barium, and a radio frequency plasma source for oxygen. BaSnO{sub 3} films were thus grown on SrTiO{sub 3} (001) and LaAlO{sub 3} (001) substrates. Growth conditions for stoichiometric BaSnO{sub 3} were identified. Reflection high-energy electron diffraction (RHEED) intensity oscillations, characteristic of a layer-by-layermore » growth mode were observed. A critical thickness of ∼1 nm for strain relaxation was determined for films grown on SrTiO{sub 3} using in situ RHEED. Scanning transmission electron microscopy combined with electron energy-loss spectroscopy and energy dispersive x-ray spectroscopy confirmed the cube-on-cube epitaxy and composition. The importance of precursor chemistry is discussed in the context of the MBE growth of BaSnO{sub 3}.« less

Controllable growth of layered selenide and telluride heterostructures and superlattices using molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vishwanath, Suresh; Liu, Xinyu; Rouvimov, Sergei

2016-01-06

Layered materials are an actively pursued area of research for realizing highly scaled technologies involving both traditional device structures as well as new physics. Lately, non-equilibrium growth of 2D materials using molecular beam epitaxy (MBE) is gathering traction in the scientific community and here we aim to highlight one of its strengths, growth of abrupt heterostructures, and superlattices (SLs). In this work we present several of the firsts: first growth of MoTe 2 by MBE, MoSe 2 on Bi 2Se 3 SLs, transition metal dichalcogenide (TMD) SLs, and lateral junction between a quintuple atomic layer of Bi 2Te 3 andmore » a triple atomic layer of MoTe 2. In conclusion, reflected high electron energy diffraction oscillations presented during the growth of TMD SLs strengthen our claim that ultrathin heterostructures with monolayer layer control is within reach.« less

Bias Dependence of the Electrical Spin Injection into GaAs from Co -Fe -B /MgO Injectors with Different MgO Growth Processes

NASA Astrophysics Data System (ADS)

Barate, P.; Liang, S. H.; Zhang, T. T.; Frougier, J.; Xu, B.; Schieffer, P.; Vidal, M.; Jaffrès, H.; Lépine, B.; Tricot, S.; Cadiz, F.; Garandel, T.; George, J. M.; Amand, T.; Devaux, X.; Hehn, M.; Mangin, S.; Tao, B.; Han, X. F.; Wang, Z. G.; Marie, X.; Lu, Y.; Renucci, P.

2017-11-01

We investigate the influence of the MgO growth process on the bias dependence of the electrical spin injection from a Co -Fe -B /MgO spin injector into a GaAs-based light-emitting diode (spin LED). With this aim, textured MgO tunnel barriers are fabricated either by sputtering or molecular-beam-epitaxy (MBE) methods. For the given growth parameters used for the two techniques, we observe that the circular polarization of the electroluminescence emitted by spin LEDs is rather stable as a function of the injected current or applied bias for the samples with sputtered tunnel barriers, whereas the corresponding circular polarization decreases abruptly for tunnel barriers grown by MBE. We attribute these different behaviors to the different kinetic energies of the injected carriers linked to differing amplitudes of the parasitic hole current flowing from GaAs to Co-Fe-B in both cases.

Electrical Characterization of Molecular Beam Epitaxy Grown Mercury-Cadmium Alloy Under Low Magnetic Field Strength

NASA Astrophysics Data System (ADS)

Wijewarnasuriya, P. S.

HgCdTe alloy is currently the most important semiconductor material for IR detection technology. Different growth techniques are used to produce HgCdTe, but achieving a high-quality material is still a major objective in the field. Among the growth techniques for HgCdTe, molecular beam epitaxy (MBE) is one of the most promising, mainly because of its versatility. Furthermore, the growth by MBE is carried out at a low temperature which limits interdiffusion processes. The focus of this research is the understanding of the electrical properties of HgCdTe layers grown by MBE technique. Using a model based on a single discrete acceptor level near the valence band and a corresponding fully ionized donor level, a good fit to the observed Hall data on p-type epilayers was obtained. In some samples, another acceptor level was needed. Also, analysis of R _{h} data and low temperature mobilities indicated that the p-type MBE growth layers were highly compensated. This was also confirmed by mercury saturated annealing experiments. Annealing of (111)B epilayers with Hg pressure leads us to believe that Hg vacancies are responsible for the p-type character. The findings reveal that the electrical properties differ drastically between different growth orientations, with (111)B having the highest residual doping levels for a particular Cd composition. It is concluded that MBE growth for HgCdTe is essentially a Te rich growth and our understanding is that this extra Te is responsible for the n-type character in the epilayers. A comparison between HgCdTe twinned layers and twin-free layers has shown that electrically active acceptors and high hole mobilities are associated with the presence of twins. Incorporation of several foreign elements also tried and all were found to substitute the metal sites during growth. With magnetic field studies on R_ {h}, resistivity and conductivity tensor analysis, the band structure of the HgCdTe alloy is also investigated. Junction depth and the

Growth and characterization of PbSe and Pb{sub 1{minus}x}Sn{sub x}Se layers on Si (100)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sachar, H.K.; Chao, I.; Fang, X.M.

1998-12-31

Crack-free layers of PbSe were grown on Si (100) by a combination of liquid phase epitaxy (LPE) and molecular beam epitaxy (MBE) techniques. The PbSe layer was grown by LPE on Si(100) using a MBE-grown PbSe/BaF{sub 2}/CaF{sub 2} buffer layer structure. Pb{sub 1{minus}x}Sn{sub x}Se layers with tin contents in the liquid growth solution equal to 3%, 5%, 6%, 7%, and 10%, respectively, were also grown by LPE on Si(100) substrates using similar buffer layer structures. The LPE-grown PbSe and Pb{sub 1{minus}x}Sn{sub x}Se layers were characterized by optical Nomarski microscopy, X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), and scanning electronmore » microscopy (SEM). Optical Nomarski characterization of the layers revealed their excellent surface morphologies and good growth solution wipe-offs. FTIR transmission experiments showed that the absorption edge of the Pb{sub 1{minus}x}Sn{sub x}Se layers shifted to lower energies with increasing tin contents. The PbSe epilayers were also lifted-off from the Si substrate by dissolving the MBE-grown BaF{sub 2} buffer layer. SEM micrographs of the cleaved edges revealed that the lifted-off layers formed structures suitable for laser fabrication.« less

Effects of substrate orientation on the growth of InSb nanostructures by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chou, C. Y.; Torfi, A.; Pei, C.

2016-05-09

In this work, the effects of substrate orientation on InSb quantum structure growth by molecular beam epitaxy (MBE) are presented. Motivated by the observation that (411) evolves naturally as a stable facet during MBE crystal growth, comparison studies have been carried out to investigate the effects of the crystal orientation of the underlying GaSb substrate on the growth of InSb by MBE. By depositing InSb on a number of different substrate orientations, namely: (100), (311), (411), and (511), a higher nanostructure density was observed on the (411) surface compared with the other orientations. This result suggests that the (411) orientationmore » presents a superior surface in MBE growth to develop a super-flat GaSb buffer surface, naturally favorable for nanostructure growth.« less

A DoD/DESAT Phase I Final Report,

DTIC Science & Technology

1982-06-30

19-22, 1982 in Albuquerque, New Mexico: 1) Spatially Correlated Redistribution of Mn and Ge in Inl.x Gax As MBE layers, E. Silberg , T.Y. Chang, and...Urbana-Champaign. 2) Spatially correlated redistribution of Mn and Ge in InGaAs MBE layers in conjunction with E. Silberg , T.Y. Chang and E.A. Caridi at...AlGaAs MBE layers. 2) A group headed by Ors. T. Chang and E. Silberg of Bell Laboratories in Holmdel, New Jersey, have been involved in growing Mn and

Low-Temperature Growth and Doping of Mercury-Based II-Vi Multiple Quantum Well Structures by Molecular Beam Epitaxy

NASA Astrophysics Data System (ADS)

Lansari, Yamina

The growth of Hg-based single layers and multiple quantum well structures by conventional molecular beam epitaxy (MBE) and photoassisted MBE was studied. The use of photoassisted MBE, an epitaxial growth technique developed at NCSU, has resulted in a substantial reduction of the film growth temperature. Indeed, substrate temperatures 50 to 100^circC lower than those customarily used by others for conventional MBE growth of Hg-based layers were successfully employed. Photoassisted MBE allowed the preparation of excellent structural quality HgTe layers (FWHM for the (400) diffraction peak ~ 40 arcsec), HgCdTe layers (FWHM for the (400) diffraction peak ~ 14 arcsec), and HgTeCdTe superlattices (FWHM for the (400) diffraction peak ~ 28 arcsec). In addition, n-type and p-type modulation-doping of Hg-based multilayers was accomplished by photoassisted MBE. This technique has been shown to have a significant effect on the growth process kinetics as well as on the desorption rates of the film species, thereby affecting dopant incorporation mechanisms and allowing for the successful substitutional doping of the multilayer structures. Finally, surface morphology studies were completed using scanning electron microscopy (SEM) and Nomarsky optical microscopy to study the effects of substrate surface preparation, growth initiation, and growth parameters on the density of pyramidal hillocks, a common growth defect plaguing the Hg-based layers grown in the (100) direction. Conditions which minimize the hillock density for (100) film growth have been determined.

In situ monitoring of the surface reconstructions on InP(001) prepared by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Ozanyan, K. B.; Parbrook, P. J.; Hopkinson, M.; Whitehouse, C. R.; Sobiesierski, Z.; Westwood, D. I.

1997-07-01

Reflection anisotropy spectroscopy (RAS) and reflection high-energy electron diffraction (RHEED) were applied to study clean InP(001) surfaces prepared by molecular beam epitaxy (MBE). At phosphorus beam equivalent pressures (BEPs) between 3.5×10-7 and 3.5×10-6 mbar and substrate temperature (Ts) falling from 590 to 150 °C, (2×4), (2×1), (2×2), and c(4×4) RHEED patterns are observed. The main RAS features, observed at 1.7-1.9 and 2.6-2.9 eV are assigned to In and P dimers, respectively. The above reconstruction sequence is associated closely with transformations identified in RAS signatures that are induced by progressively increasing the P surface coverage. The RAS results also imply the existence of (2×4)α and (2×4)β phases. A surface-phase diagram for MBE-grown (001) InP, in the whole range of Ts and phosphorus BEPs is proposed.

Self-consistent expansion for the molecular beam epitaxy equation

NASA Astrophysics Data System (ADS)

Katzav, Eytan

2002-03-01

Motivated by a controversy over the correct results derived from the dynamic renormalization group (DRG) analysis of the nonlinear molecular beam epitaxy (MBE) equation, a self-consistent expansion for the nonlinear MBE theory is considered. The scaling exponents are obtained for spatially correlated noise of the general form D(r-->-r',t-t')=2D0\\|r-->- r'\\|2ρ-dδ(t-t'). I find a lower critical dimension dc(ρ)=4+2ρ, above which the linear MBE solution appears. Below the lower critical dimension a ρ-dependent strong-coupling solution is found. These results help to resolve the controversy over the correct exponents that describe nonlinear MBE, using a reliable method that proved itself in the past by giving reasonable results for the strong-coupling regime of the Kardar-Parisi-Zhang system (for d>1), where DRG failed to do so.

Self-consistent expansion for the molecular beam epitaxy equation.

PubMed

Katzav, Eytan

2002-03-01

Motivated by a controversy over the correct results derived from the dynamic renormalization group (DRG) analysis of the nonlinear molecular beam epitaxy (MBE) equation, a self-consistent expansion for the nonlinear MBE theory is considered. The scaling exponents are obtained for spatially correlated noise of the general form D(r-r('),t-t('))=2D(0)[r-->-r(')](2rho-d)delta(t-t(')). I find a lower critical dimension d(c)(rho)=4+2rho, above which the linear MBE solution appears. Below the lower critical dimension a rho-dependent strong-coupling solution is found. These results help to resolve the controversy over the correct exponents that describe nonlinear MBE, using a reliable method that proved itself in the past by giving reasonable results for the strong-coupling regime of the Kardar-Parisi-Zhang system (for d>1), where DRG failed to do so.

Gallium arsenide (GaAs) (001) after sublimation of arsenic (As) thin-film cap, by XPS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Engelhard, Mark H.; Lyubinetsky, Andre; Baer, Don R.

2016-12-01

Survey and high energy resolution spectra are reported for MBE grown GaAs (001) that had been capped with As. The As cap was removed by heating in situ prior to analysis. The current data expands upon the spectral regions previously reported in Surface Science Spectra. High energy resolution spectral features reported include: 2p, 3s, 3p, 3d, and L3M45M45 peaks for As; 2p, 3s, 3p, 3d, and L3M45M45 peaks for Ga; and the valance band region.

Safety and Toxicology of Magnolol and Honokiol.

PubMed

Sarrica, Andrea; Kirika, Natalja; Romeo, Margherita; Salmona, Mario; Diomede, Luisa

2018-06-20

Magnolia officinalis and Magnolia obovata bark extracts have been used for thousands of years in Chinese and Japanese traditional medicines and are still widely employed as herbal preparations for their sedative, antioxidant, anti-inflammatory, antibiotic, and antispastic effects. Neolignans, particularly magnolol and honokiol, are the main substances responsible for the beneficial properties of the magnolia bark extract (MBE). The content of magnolol and honokiol in MBE depends on different factors, including the Magnolia plant species, the area of origin, the part of the plant employed, and the method used to prepare the extract. The biological and pharmacological activities of magnolol and honokiol have been extensively investigated. Here we review the safety and toxicological properties of magnolol and honokiol as pure substances or as components of concentrated MBE, including the potential side-effects in humans after oral intake. In vitro and in vivo genotoxicity studies indicated that concentrated MBE has no mutagenic and genotoxic potential, while a subchronic study performed according to OECD (Organisation for Economic Co-operation and Development) guidelines established a no adverse effect level for concentrated MBE > 240 mg/kg b.w/d. Similar to other dietary polyphenols, magnolol and honokiol are subject to glucuronidation, and despite a relatively quick clearance, an interaction with pharmaceutical active principles or other herbal constituents cannot be excluded. However, intervention trials employing concentrated MBE for up to 1 y did not report adverse effects. In conclusion, over the recent years different food safety authorities evaluated magnolol and honokiol and considered them safe. Georg Thieme Verlag KG Stuttgart · New York.

Formation and Characterization of Gold Nanoparticles

DTIC Science & Technology

2013-09-01

nanowires are useful because they can be grown almost dislocation free, due to their nano dimension. The quality of crystalline materials is diminished by...real substrate temperature was obtained from the calibration based on the melting points of indium (In), selenium (Se), cadmium (Cd), and zinc (Zn...hydrogen fluoride In indium MBE molecular beam epitaxy NH3OH ammonium hydroxide RHEED reflection high-energy electron diffraction Se selenium SEM

Bipolar Cascade Vertical-Cavity Surface-Emitting Lasers for RF Photonic Link Applications

DTIC Science & Technology

2007-09-01

6 IV Current versus Voltage . . . . . . . . . . . . . . . . . . . . . 7 MBE Molecular Beam Epitaxy ...of carrying maximum photocur- rent. Numerous material parameters have been studied. Growth parameters for molecular beam epitaxy (MBE), metal-organic...12 MOCVD Metal-Organic Chemical Vapor Deposition . . . . . . . . . . 12 CBE Chemical Beam Epitaxy . . . . . . . . . . . . . . . . . . . . 12 LPE

The Ciprofloxacin Impact on Biofilm Formation by Proteus Mirabilis and P. Vulgaris Strains

PubMed Central

Kwiecinska-Pirog, Joanna; Skowron, Krzysztof; Bartczak, Wojciech; Gospodarek-Komkowska, Eugenia

2016-01-01

Background Proteus spp. bacilli belong to opportunistic human pathogens, which are primarily responsible for urinary tract and wound infections. An important virulence factor is their ability to form biofilms that greatly reduce the effectiveness of antibiotics in the site of infection. Objectives The aim of this study was to determine the value of the minimum concentration of ciprofloxacin that eradicates a biofilm of Proteus spp. strains. Materials and Methods A biofilm formation of 20 strains of P. mirabilis and 20 strains of P. vulgaris were evaluated by a spectrophotometric method using 0.1% 2, 3, 5-Triphenyl-tetrazolium chloride solution (TTC, AVANTORTM). On the basis of the results of the absorbance of the formazan, a degree of reduction of biofilm and minimum biofilm eradication (MBE) values of MBE50 and MBE90 were determined. Results All tested strains formed a biofilm. A value of 1.0 μg/mL ciprofloxacin is MBE50 for the strains of both tested species. An MBE90 value of ciprofloxacin for isolates of P. vulgaris was 2 μg/mL and for P. mirabilis was 512 μg/mL. Conclusions Minimum biofilm eradication values of ciprofloxacin obtained in the study are close to the values of the minimal inhibition concentration (MIC). PMID:27303616

Enhancing the far-UV sensitivity of silicon CMOS imaging arrays

NASA Astrophysics Data System (ADS)

Retherford, K. D.; Bai, Yibin; Ryu, Kevin K.; Gregory, J. A.; Welander, Paul B.; Davis, Michael W.; Greathouse, Thomas K.; Winter, Gregory S.; Suntharalingam, Vyshnavi; Beletic, James W.

2014-07-01

We report our progress toward optimizing backside-illuminated silicon PIN CMOS devices developed by Teledyne Imaging Sensors (TIS) for far-UV planetary science applications. This project was motivated by initial measurements at Southwest Research Institute (SwRI) of the far-UV responsivity of backside-illuminated silicon PIN photodiode test structures described in Bai et al., SPIE, 2008, which revealed a promising QE in the 100-200 nm range as reported in Davis et al., SPIE, 2012. Our effort to advance the capabilities of thinned silicon wafers capitalizes on recent innovations in molecular beam epitaxy (MBE) doping processes. Key achievements to date include: 1) Representative silicon test wafers were fabricated by TIS, and set up for MBE processing at MIT Lincoln Laboratory (LL); 2) Preliminary far-UV detector QE simulation runs were completed to aid MBE layer design; 3) Detector fabrication was completed through the pre-MBE step; and 4) Initial testing of the MBE doping process was performed on monitoring wafers, with detailed quality assessments. Early results suggest that potential challenges in optimizing the UV-sensitivity of silicon PIN type CMOS devices, compared with similar UV enhancement methods established for CCDs, have been mitigated through our newly developed methods. We will discuss the potential advantages of our approach and briefly describe future development steps.

The investigation of Al0.29Ga0.71N/GaN/AlN and AlN/GaN/AlN thin films grown on Si (111) by RF plasma-assisted MBE

NASA Astrophysics Data System (ADS)

Yusoff, Mohd Zaki Mohd; Mahyuddin, Azzafeerah; Hassan, Zainuriah; Hassan, Haslan Abu; Abdullah, Mat Johar

2012-06-01

Recently, gallium nitride (GaN) and its related compounds involving Al and In have attracted much attention because of their potential to be used as high-efficiency UV light emitting devices, and as high frequency and high power electronic devices. Consequently, the growth and physics of GaN-based materials have attracted remarkable scientific attention. In this work, the growth and characterization of epitaxial Al0.29Ga0.71N and AlN layers grown on Si (111) by RF-plasma assisted molecular beam epitaxy (MBE) are described. The Al mole fraction was derived from the HR-XRD symmetric rocking curve (RC) ω/2θ scans of (0002) plane as x = 0.29. For AlN/GaN/AlN sample, the maximum Raman intensity at 521.53 cm-1 is attributed to crystalline silicon. It was found that the allowed Raman optical phonon mode of GaN, the E1 (high) is clearly visible, which is located at 570.74 cm-1. Photoluminscence (PL) spectrums of both samples have shown sharp and intense band edge emission of GaN without the existence of yellow emission band, showing good crystal quality of the samples have been successfully grown on Si substrate.

Applying CLIPS to control of molecular beam epitaxy processing

NASA Technical Reports Server (NTRS)

Rabeau, Arthur A.; Bensaoula, Abdelhak; Jamison, Keith D.; Horton, Charles; Ignatiev, Alex; Glover, John R.

1990-01-01

A key element of U.S. industrial competitiveness in the 1990's will be the exploitation of advanced technologies which involve low-volume, high-profit manufacturing. The demands of such manufacture limit participation to a few major entities in the U.S. and elsewhere, and offset the lower manufacturing costs of other countries which have, for example, captured much of the consumer electronics market. One such technology is thin-film epitaxy, a technology which encompasses several techniques such as Molecular Beam Epitaxy (MBE), Chemical Beam Epitaxy (CBE), and Vapor-Phase Epitaxy (VPE). Molecular Beam Epitaxy (MBE) is a technology for creating a variety of electronic and electro-optical materials. Compared to standard microelectronic production techniques (including gaseous diffusion, ion implantation, and chemical vapor deposition), MBE is much more exact, though much slower. Although newer than the standard technologies, MBE is the technology of choice for fabrication of ultraprecise materials for cutting-edge microelectronic devices and for research into the properties of new materials.

Growth of BaSi2 continuous films on Ge(111) by molecular beam epitaxy and fabrication of p-BaSi2/n-Ge heterojunction solar cells

NASA Astrophysics Data System (ADS)

Takabe, Ryota; Yachi, Suguru; Tsukahara, Daichi; Toko, Kaoru; Suemasu, Takashi

2017-05-01

We grew BaSi2 films on Ge(111) substrates by various growth methods based on molecular beam epitaxy (MBE). First, we attempted to form BaSi2 films directly on Ge(111) by MBE without templates. We next formed BaSi2 films using BaGe2 templates as commonly used for MBE growth of BaSi2 on Si substrates. Contrary to our prediction, the lateral growth of BaSi2 was not promoted by these two methods; BaSi2 formed not into a continuous film but into islands. Although streaky patterns of reflection high-energy electron diffraction were observed inside the growth chamber, no X-ray diffraction lines of BaSi2 were observed in samples taken out from the growth chamber. Such BaSi2 islands were easily to get oxidized. We finally attempted to form a continuous BaSi2 template layer on Ge(111) by solid phase epitaxy, that is, the deposition of amorphous Ba-Si layers onto MBE-grown BaSi2 epitaxial islands, followed by post annealing. We achieved the formation of an approximately 5-nm-thick BaSi2 continuous layer by this method. Using this BaSi2 layer as a template, we succeeded in forming a-axis-oriented 520-nm-thick BaSi2 epitaxial films on Ge substrates, although (111)-oriented Si grains were included in the grown layer. We next formed a B-doped p-BaSi2(20 nm)/n-Ge(111) heterojunction solar cell. A wide-spectrum response from 400 to 2000 nm was achieved. At an external bias voltage of 1 V, the external quantum efficiency reached as high as 60%, demonstrating the great potential of BaSi2/Ge combination. However, the efficiency of a solar cell under AM1.5 illumination was quite low (0.1%). The origin of such a low efficiency was examined.

Surface acceptor states in MBE-grown CdTe layers

NASA Astrophysics Data System (ADS)

Wichrowska, Karolina; Wosinski, Tadeusz; Tkaczyk, Zbigniew; Kolkovsky, Valery; Karczewski, Grzegorz

2018-04-01

A deep-level hole trap associated with surface defect states has been revealed with deep-level transient spectroscopy investigations of metal-semiconductor junctions fabricated on nitrogen doped p-type CdTe layers grown by the molecular-beam epitaxy technique. The trap displayed the hole-emission activation energy of 0.33 eV and the logarithmic capture kinetics indicating its relation to extended defect states at the metal-semiconductor interface. Strong electric-field-induced enhancement of the thermal emission rate of holes from the trap has been attributed to the phonon-assisted tunneling effect from defect states involving very large lattice relaxation around the defect and metastability of its occupied state. Passivation with ammonium sulfide of the CdTe surface, prior to metallization, results in a significant decrease in the trap density. It also results in a distinct reduction in the width of the surface-acceptor-state-induced hysteresis loops in the capacitance vs. voltage characteristics of the metal-semiconductor junctions.

High Power Mid Wave Infrared Semiconductor Lasers

DTIC Science & Technology

2006-06-15

resonance and the gain spectrum. The devices were grown using solid source molecular beam epitaxy (MBE) in a V80 reactor. Two side polished, undoped...verify the inherent low activation energy. N-type and P-type AISb, and various compositions of InxAl 1xSb, were grown by solid-source molecular beam ...level monitoring. Advances in epitaxial growth of semiconductor materials have allowed the development of Arsenic- free optically-pumped MWIR lasers on

A Multivariate Generalizability Analysis of the Multistate Bar Examination

ERIC Educational Resources Information Center

Yin, Ping

2005-01-01

The main purpose of this study is to examine the content structure of the Multistate Bar Examination (MBE) using the "table of specifications" model from the perspective of multivariate generalizability theory. Specifically, using MBE data collected over different years (six administrations: three from the February test and three from July test),…

Commercial production of QWIP wafers by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Fastenau, J. M.; Liu, W. K.; Fang, X. M.; Lubyshev, D. I.; Pelzel, R. I.; Yurasits, T. R.; Stewart, T. R.; Lee, J. H.; Li, S. S.; Tidrow, M. Z.

2001-06-01

As the performance of quantum well infrared photodetectors (QWIPs) and QWIP-based imaging systems continues to improve, their demand will undoubtedly grow. This points to the importance of a reliable commercial supplier of semiconductor QWIP material on three inch and, in the near future, four-inch substrates. Molecular beam epitaxy (MBE) is the preferred technique for growing the demanding QWIP structure, as tight control is required over the material composition and layer thickness. We report the current status of MBE-grown GaAs-based QWIP structures in a commercial production environment at IQE. Uniformity data and run-to-run reproducibility on both three-inch and four-inch GaAs substrates are quantified using alloy composition and QW thickness. Initial results on growth technology transfer to a multi-wafer MBE reactor are also presented. High-resolution X-ray diffraction measurements demonstrate GaAs QW thickness variations and AlGaAs barrier compositions changes to be less than 4% and 1% Al, respectively, across four-inch QWIP wafers from both single- and multiple-wafer MBE platforms.

Nucleation of graphene layers on magnetic oxides: Co 3O 4(111) and Cr 2O 3(0001) from theory and experiment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Beatty, John; Cheng, Tao; Cao, Yuan

We report directly grown strongly adherent graphene on Co 3O 4(111) by carbon molecular beam epitaxy (C MBE) at 850 K and density functional theory (DFT) findings that the first graphene layer is reconstructed to fit the Co 3O 4 surface, while subsequent layers retain normal graphene structure. This adherence to the Co 3O 4 structure results from partial bonding of half the carbons to top oxygens of the substrate. This structure is validated by X-ray photoelectron spectroscopy and low-energy electron diffraction studies, showing layer-by-layer graphene growth with ~0.08 electrons/carbon atom transferred to the oxide from the first graphene layer,more » in agreement with DFT. In contrast, for Cr 2O 3 DFT finds no strong bonding to the surface and C MBE on Cr 2O 3(0001) yields only graphite formation at 700 K, with C desorption above 800 K. As a result, strong graphene-to-oxide charge transfer aids nucleation of graphene on incommensurate oxide substrates and may have implications for spintronics.« less

Nucleation of graphene layers on magnetic oxides: Co 3O 4(111) and Cr 2O 3(0001) from theory and experiment

DOE PAGES

Beatty, John; Cheng, Tao; Cao, Yuan; ...

2016-12-14

We report directly grown strongly adherent graphene on Co 3O 4(111) by carbon molecular beam epitaxy (C MBE) at 850 K and density functional theory (DFT) findings that the first graphene layer is reconstructed to fit the Co 3O 4 surface, while subsequent layers retain normal graphene structure. This adherence to the Co 3O 4 structure results from partial bonding of half the carbons to top oxygens of the substrate. This structure is validated by X-ray photoelectron spectroscopy and low-energy electron diffraction studies, showing layer-by-layer graphene growth with ~0.08 electrons/carbon atom transferred to the oxide from the first graphene layer,more » in agreement with DFT. In contrast, for Cr 2O 3 DFT finds no strong bonding to the surface and C MBE on Cr 2O 3(0001) yields only graphite formation at 700 K, with C desorption above 800 K. As a result, strong graphene-to-oxide charge transfer aids nucleation of graphene on incommensurate oxide substrates and may have implications for spintronics.« less

Surface Interaction Kinetics of GaAs (100) Surfaces Under Electron Cyclotron Resonance Nitrogen Plasma Exposure

NASA Astrophysics Data System (ADS)

O'Steen, M. L.; Hauenstein, R. J.; Bandić, Z. Z.; Feenstra, R. M.; Hwang, S. J.; McGill, T. C.

1996-03-01

GaN is a robust semiconducting material offering a large, direct bandgap appropriate for use in blue-green to UV light emitting diodes and laser diodes. Attainment of device quality GaN has been difficult due to the lack of substrate materials that are suitably matched to the unusually small lattice parameter of GaN. To better control heteroepitaxial growth quality, a fundamental study of the initial stages of GaN growth by Electron Cyclotron Resonance Nitrogen Plasma-Assisted Molecular Beam Epitaxy (ECR-MBE) has been performed. The effect of an ECR Nitrogen plasma on a GaAs (100) surface is examined through time resolved reflection high energy electron diffraction, high resolution x-ray diffraction, and cross-sectional scanning tunneling microscopy. Fully commensurate GaN_yAs_1-y/GaAs heterostructures involving ultrathin GaN_yAs_1-y layers are obtained, and thermally activated microscopic growth processes are identified and quantitatively characterized through the aid of a specially developed kinetic model. The implications for ECR-MBE growth of GaN/GaAs mutilayers is discussed.

Synthesis science of SrRuO3 and CaRuO3 epitaxial films with high residual resistivity ratios

NASA Astrophysics Data System (ADS)

Nair, Hari P.; Liu, Yang; Ruf, Jacob P.; Schreiber, Nathaniel J.; Shang, Shun-Li; Baek, David J.; Goodge, Berit H.; Kourkoutis, Lena F.; Liu, Zi-Kui; Shen, Kyle M.; Schlom, Darrell G.

2018-04-01

Epitaxial SrRuO3 and CaRuO3 films were grown under an excess flux of elemental ruthenium in an adsorption-controlled regime by molecular-beam epitaxy (MBE), where the excess volatile RuOx (x = 2 or 3) desorbs from the growth front leaving behind a single-phase film. By growing in this regime, we were able to achieve SrRuO3 and CaRuO3 films with residual resistivity ratios (ρ300 K/ρ4 K) of 76 and 75, respectively. A combined phase stability diagram based on the thermodynamics of MBE (TOMBE) growth, termed a TOMBE diagram, is employed to provide improved guidance for the growth of complex materials by MBE.

Molecular Beam Epitaxy Growth of Transition Metal Dichalcogenides

NASA Astrophysics Data System (ADS)

Yue, Ruoyu

The exponential growth of Si-based technology has finally reached its limit, and a new generation of devices must be developed to continue scaling. A unique class of materials, transition metal dichalcogenides (TMD), have attracted great attention due to their remarkable optical and electronic properties at the atomic thickness scale. Over the past decade, enormous efforts have been put into TMD research for application in low-power devices. Among these studies, a high-quality TMD synthesis method is essential. Molecular beam epitaxy (MBE) can enable high-quality TMD growth by combining high purity elemental sources and an ultra-high vacuum growth environment, together with the back-end-of-line compatible growth temperatures. Although many TMD candidates have been grown by MBE with promising microstructure, the limited grain size (< 200 nm) for the MBE-grown TMDs reported in the literature thus far is unsuitable for high-performance device applications. In this dissertation, the synthesis of TMDs by MBE and their implementation in device structures were investigated. van der Waals epitaxial growth of these TMDs (HfSe2, WTe2, WSe2, WTex Se2-x), due to the relaxed interactions at the interface, have been demonstrated on large lattice-mismatched substrates without strain and misfit dislocations. The fundamental nucleation and growth behavior of WSe2 was investigated through a detailed experimental design, combined with on-lattice, diffusion-based first principles kinetic modeling. Over one order of magnitude improvement in grain size was achieved through this study. Results from both experiment and simulation showed that reducing the growth rate, enabled by high growth temperature and low metal flux, is vital to nucleation density control. Meanwhile, providing a chalcogen-rich growth environment will promote larger grain lateral growth by suppressing vertical growth. Applying the knowledge learned from the nucleation study, we sucessfully integrated the MBE-grown WSe2

Growing Gallium Arsenide On Silicon

NASA Technical Reports Server (NTRS)

Radhakrishnan, Gouri

1989-01-01

Epitaxial layers of high quality formed on <111> crystal plane. Present work reports successful growth of 1- and 2-micrometer thick layers of n-type, 7-ohms per cm, 2-inch diameter, Si<111> substrate. Growth conducted in Riber-2300(R) MBE system. Both doped and undoped layers of GaAs grown. Chamber equipped with electron gun and camera for in-situ reflection high-energy-electron diffraction measurements. RHEED patterns of surface monitored continuously during slow growth stage.

High Temperature Annealing of MBE-grown Mg-doped GaN

NASA Astrophysics Data System (ADS)

Contreras, S.; Konczewicz, L.; Peyre, H.; Juillaguet, S.; Khalfioui, M. Al; Matta, S.; Leroux, M.; Damilano, B.; Brault, J.

2017-06-01

In this report, are shown the results of high temperature resistivity and Hall Effect studies of Mg-doped GaN epilayers. The samples studied were grown on (0001) (c-plane) sapphire by molecular beam epitaxy and 0.5 μm GaN:Mg layers have been achieved on low temperature buffers of GaN (30 nm) and AlN ( 150 nm). The experiments were carried out in the temperature range from 300 K up to 900 K. Up to about 870 K a typical thermally activated conduction process has been observed with the activation energy value EA = 215 meV. However, for higher temperatures, an annealing effect is observed in all the investigated samples. The increase of the free carrier concentration as a function of time leads to an irreversible decrease of sample resistivity of more than 60%.

Quantitative analysis of the Ge concentration in a SiGe quantum well: comparison of low-energy RBS and SIMS measurements.

PubMed

Krecar, D; Rosner, M; Draxler, M; Bauer, P; Hutter, H

2006-01-01

The germanium concentration and the position and thickness of the quantum well in molecular beam epitaxy (MBE)-grown SiGe were quantitatively analyzed via low-energy Rutherford backscattering (RBS) and secondary ion mass spectrometry (SIMS). In these samples, the concentrations of Si and Ge were assumed to be constant, except for the quantum well, where the germanium concentration was lower. The thickness of the analyzed quantum well was about 12 nm and it was situated at a depth of about 60 nm below the surface. A dip showed up in the RBS spectra due to the lower germanium concentration in the quantum well, and this was evaluated. Good depth resolution was required in order to obtain quantitative results, and this was obtained by choosing a primary energy of 500 keV and a tilt angle of 51 degrees with respect to the surface normal. Quantitative information was deduced from the raw data by comparing it with SIMNRA simulated spectra. The SIMS measurements were performed with oxygen primary ions. Given the response function of the SIMS instrument (the SIMS depth profile of the germanium delta (delta) layer), and using the forward convolution (point-to-point convolution) model, it is possible to determine the germanium concentration and the thickness of the analyzed quantum well from the raw SIMS data. The aim of this work was to compare the results obtained via RBS and SIMS and to show their potential for use in the semiconductor and microelectronics industry. The detection of trace elements (here the doping element antimony) that could not be evaluated with RBS in low-energy mode is also demonstrated using SIMS instead.

Doping of free-standing zinc-blende GaN layers grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Novikov, S. V.; Powell, R. E. L.; Staddon, C. R.; Kent, A. J.; Foxon, C. T.

2014-10-01

Currently there is high level of interest in developing of vertical device structures based on the group III nitrides. We have studied n- and p-doping of free-standing zinc-blende GaN grown by plasma-assisted molecular beam epitaxy (PA-MBE). Si was used as the n-dopant and Mg as the p-dopant for zinc-blende GaN. Controllable levels of doping with Si and Mg in free-standing zinc-blende GaN have been achieved by PA-MBE. The Si and Mg doping depth uniformity through the zinc-blende GaN layers have been confirmed by secondary ion mass spectrometry (SIMS). Controllable Si and Mg doping makes PA-MBE a promising method for the growth of conducting group III-nitrides bulk crystals.

Comparative study of LaNiO3/LaAlO3 heterostructures grown by pulsed laser deposition and oxide molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Wrobel, F.; Mark, A. F.; Christiani, G.; Sigle, W.; Habermeier, H.-U.; van Aken, P. A.; Logvenov, G.; Keimer, B.; Benckiser, E.

2017-01-01

Variations in growth conditions associated with different deposition techniques can greatly affect the phase stability and defect structure of complex oxide heterostructures. We synthesized superlattices of the paramagnetic metal LaNiO3 and the large band gap insulator LaAlO3 by atomic layer-by-layer molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) and compared their crystallinity and microstructure as revealed by high-resolution transmission electron microscopy images and resistivity. The MBE samples show a higher density of stacking faults but smoother interfaces and generally higher electrical conductivity. Our study identifies the opportunities and challenges of MBE and PLD growth and serves as a general guide for the choice of the deposition technique for perovskite oxides.

Molecular Beam Epitaxial Growth and Characterization of Graphene and Hexagonal Boron Nitride Two-Dimensional Layers

NASA Astrophysics Data System (ADS)

Zheng, Renjing

Van der Waals (vdW) materials (also called as two-dimensional (2D) material in some literature) systems have received extensive attention recently due to their potential applications in next-generation electronics platform. Exciting properties have been discovered in this field, however, the performance and properties of the systems rely on the materials' quality and interface significantly, leading to the urgent need for scalable synthesis of high-quality vdW crystals and heterostructures. Toward this direction, this dissertation is devoted on the study of Molecular Beam Epitaxy (MBE) growth and various characterization of vdW materials and heterostructures, especially graphene and hexagonal boron nitride (h-BN). The goal is to achieve high-quality vdW materials and related heterostructures. There are mainly four projects discussed in this dissertation. The first project (Chapter 2) is about MBE growth of large-area h-BN on copper foil. After the growth, the film was transferred onto SiO2 substrate for characterization. It is observed that as-grown film gives evident h-BN Raman spectrum; what's more, h-BN peak intensity and position is dependent on film thickness. N-1s and B-1s XPS peaks further suggest the formation of h-BN. AFM and SEM images show the film is flat and continuous over large area. Our synthesis method shows it's possible to use MBE to achieve h-BN growth and could also pave a way for some unique structure, such as h-BN/graphene heterostructures and doped h-BN films by MBE. The second project (Chapter 3) is focused on establishment of grapehene/h-BN heterostructure on cobalt (Co) film. In-situ epitaxial growth of graphene/h-BN heterostructures on Co film substrate was achieved by using plasma-assisted MBE. The direct graphene/h-BN vertical stacking structures were demonstrated and further confirmed by various characterizations, such as Raman spectroscopy, SEM, XPS and TEM. Large area heterostructures consisting of single- /bilayer graphene and

Progress Report for the Joint Services Electronics Program

DTIC Science & Technology

1988-06-30

31, 1988. The current JSEP contract that began on October 1, 1986. contains 22 work units (Unit 3 of the new contract was withdrawn and Unit 6 S, has...Professor Bang-Sup Song has joined the VLSI Circuits Group. Although none of these young faculty is currently receiving direct support from the JSEP...deposition. (2) We have in’,.estgated the use of lc\\%-energy primary and secondary accelerated-ion doping during MBE * grov tn to demonstrate increa-es in

Optical Probing of Low-Pressure Solution Grown GaN Crystal Properties

DTIC Science & Technology

2010-04-01

observed in Mg and Si doped epitaxial films deposited by MBE and MOCVD on freestanding GaN HVPE substrates [23–25]. Considering the purity of the precursors...bands with similar energy positions here reported, a dominant deeper acceptor impurity has been assigned to Zn , a well known deep acceptor in GaN . Room...00-00-2010 to 00-00-2010 4. TITLE AND SUBTITLE Optical probing of low-pressure solution grown GaN crystal properties 5a. CONTRACT NUMBER 5b

Investigation of Excitonic Polaritons in ZnO Microcavities

DTIC Science & Technology

2006-07-28

defects on the nonradiative processes in L-MBE ZnO were studied using time-resolved PL making a connection with the results of positron annihilation...IMPLANTATION DEPTH (nm) S PA R A M E T E R POSITRON ENERGY (keV) 150010005003001000 0 5 10 15 20 25 30 0.42 0.44 0.46 0.48 0.50 ZnO single crystal 0.42...photoluminescence (TRPL) and monoenergetic positron annihilation methods, and elimination of point defects as a fundamental pathway in improving

Testing the Digital Thread in Support of Model-Based Manufacturing and Inspection

PubMed Central

Hedberg, Thomas; Lubell, Joshua; Fischer, Lyle; Maggiano, Larry; Feeney, Allison Barnard

2016-01-01

A number of manufacturing companies have reported anecdotal evidence describing the benefits of Model-Based Enterprise (MBE). Based on this evidence, major players in industry have embraced a vision to deploy MBE. In our view, the best chance of realizing this vision is the creation of a single “digital thread.” Under MBE, there exists a Model-Based Definition (MBD), created by the Engineering function, that downstream functions reuse to complete Model-Based Manufacturing and Model-Based Inspection activities. The ensemble of data that enables the combination of model-based definition, manufacturing, and inspection defines this digital thread. Such a digital thread would enable real-time design and analysis, collaborative process-flow development, automated artifact creation, and full-process traceability in a seamless real-time collaborative development among project participants. This paper documents the strengths and weaknesses in the current, industry strategies for implementing MBE. It also identifies gaps in the transition and/or exchange of data between various manufacturing processes. Lastly, this paper presents measured results from a study of model-based processes compared to drawing-based processes and provides evidence to support the anecdotal evidence and vision made by industry. PMID:27325911

Photoluminescence of ZnTe/ZnMgTe multiple quantum well structures grown on ZnTe substrates by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Tanaka, Tooru; Ohshita, Hiroshi; Saito, Katsuhiko; Guo, Qixin

2018-02-01

Photoluminescence (PL) properties of ZnTe/ZnMgTe quantum well (QW) structures grown by molecular beam epitaxy (MBE) were investigated systematically with respect to well widths and Mg contents. Observed PL peak energies were consistent well with the calculated emission energies of the QWs considering a lattice distortion in the ZnTe well. From the temperature dependence of PL intensity, it was found that a suppression of a carrier escape from QW is crucial to obtain a PL at higher temperature in the ZnTe/ZnMgTe QW. Based on the results, multiple quantum well structures were designed and fabricated, which exhibited a green PL at room temperature.

Tools to Study Interfaces for Superconducting, Thermoelectric, and Magnetic Materials at the University of Houston

DTIC Science & Technology

2016-09-01

The MBE system, which grows crystalline thin films in ultrahigh vacuum (UHV) with precise control of thickness, composition, and morphology, will...used on our sputtering system to fabricate thin films with interfaces. - The electronic structures of these materials will be investigated using the...magnetization/transport measurements. The MBE system, which grows crystalline thin films in ultrahigh vacuum (UHV) with precise control of thickness, composition

Advanced Shutter Control for a Molecular Beam Epitaxy Reactor

DTIC Science & Technology

An open-source hardware and software-based shutter controller solution was developed that communicates over Ethernet with our original equipment...manufacturer (OEM) molecular beam epitaxy (MBE) reactor control software. An Arduino Mega microcontroller is the used for the brain of the shutter... controller , while a custom-designed circuit board distributes 24-V power to each of the 16 shutter solenoids available on the MBE. Using Ethernet

The controlled growth of perovskite thin films: Opportunities, challenges, and synthesis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schlom, D.G.; Theis, C.D.; Hawley, M.E.

1997-10-01

The broad spectrum of electronic and optical properties exhibited by perovskites offers tremendous opportunities for microelectronic devices, especially when a combination of properties in a single device is desired. Molecular beam epitaxy (MBE) has achieved unparalleled control in the integration of semiconductors at the monolayer-level; its use for the integration of perovskites with similar nanoscale customization appears promising. Composition control and oxidation are often significant challenges to the growth of perovskites by MBE, but we show that these can be met through the use of purified ozone as an oxidant and real-time atomic absorption composition control. The opportunities, challenges, andmore » synthesis of oxide heterostructures by reactive MBE are described, with examples taken from the growth of oxide superconductors and oxide ferroelectrics.« less

Gallium Nitride (GaN) High Power Electronics (FY11)

DTIC Science & Technology

2012-01-01

GaN films grown by metal-organic chemical vapor deposition (MOCVD) and ~1010 in films grown by molecular beam epitaxy (MBE) when they are deposited...inductively coupled plasma I-V current-voltage L-HVPE low doped HVPE MBE molecular beam epitaxy MOCVD metal-organic chemical vapor deposition...figure of merit HEMT high electron mobility transistor H-HVPE high doped HVPE HPE high power electronics HVPE hydride vapor phase epitaxy ICP

Systematic Study of p-type Doping and Related Defects in III-Nitrides: Pathway toward a Nitride HBT

DTIC Science & Technology

2012-11-20

InGaN growth where an intermediate regime does not exist.40 Considering GaN molecular - beam epitaxy (MBE) growth phase diagrams such as those...1009 (2007). 44 S. D. Burnham, Improved Understanding and Control of Magnesium-Doped Gallium Nitride by Plasma Assisted Molecular Beam Epitaxy , in...reported using a modified form of molecular beam epitaxy (MBE) called Metal-Modulated Epitaxy (MME).11, 12 The details of this shuttered technique

AlGaSb Buffer Layers for Sb-Based Transistors

DTIC Science & Technology

2010-01-01

transistor ( HEMT ), molecular beam epitaxy (MBE), field-effect transistor (FET), buffer layer INTRODUCTION High-electron-mobility transistors ( HEMTs ) with InAs...monolayers/s. The use of thinner buffer layers reduces molecular beam epitaxial growth time and source consumption. The buffer layers also exhibit...source. In addition, some of the flux from an Sb cell in a molecular beam epitaxy (MBE) system will deposit near the mouth of the cell, eventually

Ultra-Low Threshold Vertical-Cavity Surface-Emitting Lasers for USAF Applications

DTIC Science & Technology

2005-01-01

molecular beam epitaxy , semiconductors, finite element method, modeling and simulation, oxidation furnace 16. SECURITY CLASSIFICATION OF: 19a. NAME OF...Patterson Air Force Base). Device material growth was accomplished by means of molecular beam epitaxy (MBE) using a Varian GENII MBE system owned by the...grown by molecular beam epitaxy on a GaAs substrate. Vertical posts, with square and circular cross sections ranging in size from 5 to 40 microns

Passivation effect on optical and electrical properties of molecular beam epitaxy-grown HgCdTe/CdTe/Si layers

NASA Astrophysics Data System (ADS)

Kiran, Rajni; Mallick, Shubhrangshu; Hahn, Suk-Ryong; Lee, T. S.; Sivananthan, Sivalingam; Ghosh, Siddhartha; Wijewarnasuriya, P. S.

2006-06-01

The effects of passivation with two different passivants, ZnS and CdTe, and two different passivation techniques, physical vapor deposition (PVD) and molecular beam epitaxy (MBE), were quantified in terms of the minority carrier lifetime and extracted surface recombination velocity on both MBE-grown medium-wavelength ir (MWIR) and long-wavelength ir HgCdTe samples. A gradual increment of the minority carrier lifetime was reported as the passivation technique was changed from PVD ZnS to PVD CdTe, and finally to MBE CdTe, especially at low temperatures. A corresponding reduction in the extracted surface recombination velocity in the same order was also reported for the first time. Initial data on the 1/ f noise values of as-grown MWIR samples showed a reduction of two orders of noise power after 1200-Å ZnS deposition.

Delta-Doping at Wafer Level for High Throughput, High Yield Fabrication of Silicon Imaging Arrays

NASA Technical Reports Server (NTRS)

Hoenk, Michael E. (Inventor); Nikzad, Shoulch (Inventor); Jones, Todd J. (Inventor); Greer, Frank (Inventor); Carver, Alexander G. (Inventor)

2014-01-01

Systems and methods for producing high quantum efficiency silicon devices. A silicon MBE has a preparation chamber that provides for cleaning silicon surfaces using an oxygen plasma to remove impurities and a gaseous (dry) NH3 + NF3 room temperature oxide removal process that leaves the silicon surface hydrogen terminated. Silicon wafers up to 8 inches in diameter have devices that can be fabricated using the cleaning procedures and MBE processing, including delta doping.

Nano Electronics on Atomically Controlled van der Waals Quantum Heterostructures

DTIC Science & Technology

2015-03-30

for the structural of the atomically sharp interface between hBN and Bi2Te3. Finally, we have developed unprecedentedly clean graphene supercoductor...crystals by MBE method. We also use transmission electron microscopy (TEM) analysis for the structural of the atomically sharp interface between hBN and...by MBE method. We also use transmission electron microscopy (TEM) analysis for the structural of the atomically sharp interface between hBN and Bi2Te3

Avalanche Photoconductive Switching

DTIC Science & Technology

1989-06-01

implantation and by MBE growth , and p-type material was created by MBE growth of a Be doped layer. Ion implantation creates a heavily doped layer...which is used commonly for GaAs integrated circuits. We plan to use Ti-Pt-Au for p-type contacts in the future. Experimental Results Test Confi...optical wavelenght does not significantly affect the switching process. Another feature of this mode of operation is that there is a threshold

JSEP Fellowship

DTIC Science & Technology

1993-06-28

entitled "MBE Grown Microcavities for Optoelectronic Devices." In the dissertation work,1 the precision of molecular - beam epitaxy (MBE) is taken...Layers For Surface Normal Optoelectronic Devices," North American Conference on Molecular Beam Epitaxy , Ottawa, Canada, October 12-14, 1992, to be...8. C. Lei, T. J. Rogers, D. G. Deppe, and B. G. Streetman, "InGaAs-GaAs Quantum Well Vertical-Cavity Surface-Emitting Laser Using Molecular Beam

Enhanced Photoluminescence from Long Wavelength InAs Quantum Dots Embedded in a Graded (In,Ga)As Quantum Well

DTIC Science & Technology

2002-01-01

emitting lasers operating from 1.0 to 1.3 gim with very low threshold currents have been reported [2,3,9]; in addition, vertical - cavity surface - emitting ...grown by solid source molecular beam epitaxy ( MBE ). By modifying Indium composition profile within quantum well (QW) region, it’s found the... lasers ( VCSELs ) have also been successfully demonstrated [4]. There are currently several approaches to grow 1.3 jim (In,Ga)As quantum dots by MBE

Nitrogen Plasma Optimization for High-Quality Dilute Nitrides

DTIC Science & Technology

2005-02-01

Available online 1 February 2005Abstract Growth of GaInNAs by molecular beam epitaxy (MBE) generally requires a nitrogen plasma, which complicates growth...InGaAs and InGaAsP lasers. This paper addresses several of the challenges of plasma-assisted molecular beam epitaxy (MBE) of high-quality dilute nitrides...A.L. Holmes, Using beam flux monitor as Langmuir probe for plasma-assisted molecular beam epitaxy , J. Vac. Sci. Technol. B, in press.

Ion-induced crystal damage during plasma-assisted MBE growth of GaN layers

NASA Astrophysics Data System (ADS)

Kirchner, V.; Heinke, H.; Birkle, U.; Einfeldt, S.; Hommel, D.; Selke, H.; Ryder, P. L.

1998-12-01

Gallium nitride layers were grown by plasma-assisted molecular-beam epitaxy on (0001)-oriented sapphire substrates using an electron cyclotron resonance (ECR) and a radio frequency (rf) plasma source. An applied substrate bias was varied from -200 to +250 V, resulting in a change of the density and energy of nitrogen ions impinging the growth surface. The layers were investigated by high-resolution x-ray diffractometry and high-resolution transmission electron microscopy (HRTEM). Applying a negative bias during growth has a marked detrimental effect on the crystal perfection of the layers grown with an ECR plasma source. This is indicated by a change in shape and width of (0002) and (202¯5) reciprocal lattice points as monitored by triple axis x-ray measurements. In HRTEM images, isolated basal plane stacking faults were found, which probably result from precipitation of interstitial atoms. The crystal damage in layers grown with a highly negative substrate bias is comparable to that observed for ion implantation processes at orders of magnitude larger ion energies. This is attributed to the impact of ions on the growing surface. None of the described phenomena was observed for the samples grown with the rf plasma source.

Growth and Characterization Studies of InGaN for Optoelectronics, Electronics and Photovoltaic Applications

DTIC Science & Technology

2007-12-04

emitting diodes 6. Optical and material characterization of ZnO nanostructures 7. Fabrication of anodized - aluminum - oxide ( AAO ) ? preparing for patterned...Using InGaN for improving the efficiency of solar cell Theme: MOCVD and MBE growths of nitride and oxide semiconductor nanostructures for energy...0 20 40 60 80 100 120 P L E n h a n c e m e n t R a t i o Wavelength (nm) Silver -- 13X Gold --4X Aluminum -- 10X 0.0 0.5 1.0 1.5 2.0 2.5 I n

Ultracold Field Gradient Magnetometry and Transport to Study Correlated Topological Phases

DTIC Science & Technology

2016-10-01

glove box. Note that in Fig. 1(b) baking blankets are attached to the MBE, but are removed during normal operation of the system. The manipulator...Note that in Fig. 1(b)  baking   blankets are attached to the MBE, but are removed during normal operation of the system.  The  manipulator arms are

Overcoming Ehrlich-Schwöbel barrier in (1 1 1)A GaAs molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Ritzmann, Julian; Schott, Rüdiger; Gross, Katherine; Reuter, Dirk; Ludwig, Arne; Wieck, Andreas D.

2018-01-01

In this work, we first study the effect of different growth parameters on the molecular beam epitaxy (MBE) growth of GaAs layers on (1 1 1)A oriented substrates. After that we present a method for the MBE growth of atomically smooth layers by sequences of growth and annealing phases. The samples exhibit low surface roughness and good electrical properties shown by atomic force microscopy (AFM), scanning electron microscopy (SEM) and van-der-Pauw Hall measurements.

Ultra-High Aggregate Bandwidth Two-Dimensional Multiple-Wavelength Diode Laser Arrays

DTIC Science & Technology

1994-04-09

surface temperature across the wafer during the growth of the cavity spacer region using the fact that the molecular beam epitaxy (MBE) growth of GaAs...substrate surface temperature across the wafer during the growth of the cavity spacer region. Using the fact that, during an molecular beam epitaxy (MBE...K. Bacher and J.S. Harris, "Periodically Induced Mode Shift in Vertical Cavity Fabry Perot Etalons Grown by Molecular Beam Epitaxy ," to be presented

High-Temperature Spintronic Devices and Circuits in Absence of Magnetic Field

DTIC Science & Technology

2012-04-23

non-equilibrium Green’s function (NEGF) formalism. • Molecular beam epitaxy (MBE) growth of ferromagnetic metals (Fe, MnAs) and...measured for two diode injection currents in the Faraday geometry. The quantum dot microcavity device was grown by molecular beam epitaxy with a low...channel (10 nm, lxlOl9j Mn-doped) / undoped-AlAs (1 nm) tunnel barrier / undoped-GaAs (0.5 nm) / MnAs (25 nm) were grown by molecular beam epitaxy (MBE

Growth of delta-doped layers on silicon CCD/S for enhanced ultraviolet response

NASA Technical Reports Server (NTRS)

Hoenk, Michael E. (Inventor); Grunthaner, Paula J. (Inventor); Grunthaner, Frank J. (Inventor); Terhune, Robert W. (Inventor); Hecht, Michael H. (Inventor)

1994-01-01

The backside surface potential well of a backside-illuminated CCD is confined to within about half a nanometer of the surface by using molecular beam epitaxy (MBE) to grow a delta-doped silicon layer on the back surface. Delta-doping in an MBE process is achieved by temporarily interrupting the evaporated silicon source during MBE growth without interrupting the evaporated p+ dopant source (e.g., boron). This produces an extremely sharp dopant profile in which the dopant is confined to only a few atomic layers, creating an electric field high enough to confine the backside surface potential well to within half a nanometer of the surface. Because the probability of UV-generated electrons being trapped by such a narrow potential well is low, the internal quantum efficiency of the CCD is nearly 100% throughout the UV wavelength range. Furthermore, the quantum efficiency is quite stable.

The impact of substrate selection for the controlled growth of graphene by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Schumann, T.; Lopes, J. M. J.; Wofford, J. M.; Oliveira, M. H.; Dubslaff, M.; Hanke, M.; Jahn, U.; Geelhaar, L.; Riechert, H.

2015-09-01

We examine how substrate selection impacts the resulting film properties in graphene growth by molecular beam epitaxy (MBE). Graphene growth on metallic as well as dielectric templates was investigated. We find that MBE offers control over the number of atomic graphene layers regardless of the substrate used. High structural quality could be achieved for graphene prepared on Ni (111) films which were epitaxially grown on MgO (111). For growth either on Al2O3 (0001) or on (6√3×6√3)R30°-reconstructed SiC (0001) surfaces, graphene with a higher density of defects is obtained. Interestingly, despite their defective nature, the layers possess a well defined epitaxial relation to the underlying substrate. These results demonstrate the feasibility of MBE as a technique for realizing the scalable synthesis of this two-dimensional crystal on a variety of substrates.

Magnolia officinalis L. Fortified Gum Improves Resistance of Oral Epithelial Cells Against Inflammation.

PubMed

Walker, Jessica; Imboeck, Julia Maria; Walker, Joel Michael; Maitra, Amarnath; Haririan, Hady; Rausch-Fan, Xiaohui; Dodds, Michael; Inui, Taichi; Somoza, Veronika

2016-01-01

Inflammatory diseases of the periodontal tissues are known health problems worldwide. Therefore, anti-inflammatory active compounds are used in oral care products to reduce long-term inflammation. In addition to inducing inflammation, pathogen attack leads to an increased production of reactive oxygen species (ROS), which may lead to oxidative damage of macromolecules. Magnolia officinalis L. bark extract (MBE) has been shown to possess antioxidant and anti-inflammatory potential in vitro. In the present study, the influence of MBE-fortified chewing gum on the resistance against lipopolysaccharide (LPS)-induced inflammation and oxidative stress of oral epithelial cells was investigated in a four-armed parallel designed human intervention trial with 40 healthy volunteers. Ex vivo stimulation of oral epithelial cells with LPS from Porphyromonas gingivalis for 6[Formula: see text]h increased the mRNA expression and release of the pro-inflammatory cytokines IL-1[Formula: see text], IL-[Formula: see text], IL-8, MIP-1[Formula: see text], and TNF[Formula: see text]. Chewing MBE-fortified gum for 10[Formula: see text]min reduced the ex vivo LPS-induced increase of IL-8 release by 43.8 [Formula: see text] 17.1% at the beginning of the intervention. In addition, after the two-week intervention with MBE-fortified chewing gum, LPS-stimulated TNF[Formula: see text] release was attenuated by 73.4 [Formula: see text] 12.0% compared to chewing regular control gum. This increased resistance against LPS-induced inflammation suggests that MBE possesses anti-inflammatory activity in vivo when added to chewing gum. In contrast, the conditions used to stimulate an immune response of oral epithelial cells failed to induce oxidative stress, measured by catalase activity, or oxidative DNA damage.

Insolation-induced mid-Brunhes transition in Southern Ocean ventilation and deep-ocean temperature.

PubMed

Yin, Qiuzhen

2013-02-14

Glacial-interglacial cycles characterized by long cold periods interrupted by short periods of warmth are the dominant feature of Pleistocene climate, with the relative intensity and duration of past and future interglacials being of particular interest for civilization. The interglacials after 430,000 years ago were characterized by warmer climates and higher atmospheric concentrations of carbon dioxide than the interglacials before, but the cause of this climatic transition (the so-called mid-Brunhes event (MBE)) is unknown. Here I show, on the basis of model simulations, that in response to insolation changes only, feedbacks between sea ice, temperature, evaporation and salinity caused vigorous pre-MBE Antarctic bottom water formation and Southern Ocean ventilation. My results also show that strong westerlies increased the pre-MBE overturning in the Southern Ocean via an increased latitudinal insolation gradient created by changes in eccentricity during austral winter and by changes in obliquity during austral summer. The stronger bottom water formation led to a cooler deep ocean during the older interglacials. These insolation-induced differences in the deep-sea temperature and in the Southern Ocean ventilation between the more recent interglacials and the older ones were not expected, because there is no straightforward systematic difference in the astronomical parameters between the interglacials before and after 430,000 years ago. Rather than being a real 'event', the apparent MBE seems to have resulted from a series of individual interglacial responses--including notable exceptions to the general pattern--to various combinations of insolation conditions. Consequently, assuming no anthropogenic interference, future interglacials may have pre- or post-MBE characteristics without there being a systematic change in forcings. These findings are a first step towards understanding the magnitude change of the interglacial carbon dioxide concentration around 430

Theoretical and material studies on thin-film electroluminescent devices

NASA Technical Reports Server (NTRS)

Summers, C. J.; Goldman, J. A.; Brennan, K.

1988-01-01

During this report period work was performed on the modeling of High Field Electronic Transport in Bulk ZnS and ZnSe, and also on the surface cleaning of Si for MBE growth. Some MBE growth runs have also been performed in the Varian GEN II System. A brief outline of the experimental work is given. A complete summary will be done at the end of the next reporting period at the completion of the investigation. The theoretical studies are included.

Molecular beam epitaxy and metalorganic chemical vapor deposition growth of epitaxial CdTe on (100) GaAs/Si and (111) GaAs/Si substrates

NASA Technical Reports Server (NTRS)

Nouhi, A.; Radhakrishnan, G.; Katz, J.; Koliwad, K.

1988-01-01

Epitaxial CdTe has been grown on both (100)GaAs/Si and (111)GaAs/Si substrates. A combination of molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) has been employed for the first time to achieve this growth: the GaAs layers are grown on Si substrates by MBE and the CdTe film is subsequently deposited on GaAs/Si by MOCVD. The grown layers have been characterized by X-ray diffraction, scanning electron microscopy, and photoluminescence.

Sb-Based n- and p-Channel Heterostructure FETs for High-Speed, Low-Power Applications

DTIC Science & Technology

2008-07-01

Laboratory are presented. 2. InAlSb/InAs HEMTs The HEMT material was grown by solid-source molecu- lar beam epitaxy (MBE) on a semi-insulating (100) GaAs...and S.Y. Lin, “Strained quantum well modulation-doped InGaSb/AlGaSb struc- tures grown by molecular beam epitaxy ,” J. Electron. Mater., vol.22, no.3...where he majored in solid state physics and researched growth by molecular - beam epitaxy (MBE) of certain compound semiconductor ma- terials. Since

Enhanced Hole Mobility and Density in GaSb Quantum Wells

DTIC Science & Technology

2013-01-01

Keywords: Molecular beam epitaxy Quantum wells Semiconducting III–V materials Field-effect transistors GaSb a b s t r a c t Modulation-doped quantum wells...QWs) of GaSb clad by AlAsSb were grown by molecular beam epitaxy on InP substrates. By virtue of quantum confinement and compressive strain of the...heterostructures studied here are grown by molecular beam epitaxy (MBE) on semi-insulating (001) InP substrates using a Riber Compact 21T MBE system. A cross

Chip-Scale Controlled Storage All-Optical Memory

DTIC Science & Technology

2007-02-01

half width at half maximum KHZ kilo Hertz KK Kramers-Kronig LH light hole MBE molecular beam epitaxy MHz mega Hertz MZI Mach-Zehnder...waveguide geometry. The sample used in experiments 1 and 2 consists of 15 GaAs (135Å)/Al0.3Ga0.7As(150 Å) QWs grown by molecular beam epitaxy (MBE...We developed the capability to grow GaAs QWs on (110)-oriented substrates using molecular beam epitaxy in a very short amount of time. The very

N-Type delta Doping of High-Purity Silicon Imaging Arrays

NASA Technical Reports Server (NTRS)

Blacksberg, Jordana; Hoenk, Michael; Nikzad, Shouleh

2005-01-01

A process for n-type (electron-donor) delta doping has shown promise as a means of modifying back-illuminated image detectors made from n-doped high-purity silicon to enable them to detect high-energy photons (ultraviolet and x-rays) and low-energy charged particles (electrons and ions). This process is applicable to imaging detectors of several types, including charge-coupled devices, hybrid devices, and complementary metal oxide/semiconductor detector arrays. Delta doping is so named because its density-vs.-depth characteristic is reminiscent of the Dirac delta function (impulse function): the dopant is highly concentrated in a very thin layer. Preferably, the dopant is concentrated in one or at most two atomic layers in a crystal plane and, therefore, delta doping is also known as atomic-plane doping. The use of doping to enable detection of high-energy photons and low-energy particles was reported in several prior NASA Tech Briefs articles. As described in more detail in those articles, the main benefit afforded by delta doping of a back-illuminated silicon detector is to eliminate a "dead" layer at the back surface of the silicon wherein high-energy photons and low-energy particles are absorbed without detection. An additional benefit is that the delta-doped layer can serve as a back-side electrical contact. Delta doping of p-type silicon detectors is well established. The development of the present process addresses concerns specific to the delta doping of high-purity silicon detectors, which are typically n-type. The present process involves relatively low temperatures, is fully compatible with other processes used to fabricate the detectors, and does not entail interruption of those processes. Indeed, this process can be the last stage in the fabrication of an imaging detector that has, in all other respects, already been fully processed, including metallized. This process includes molecular-beam epitaxy (MBE) for deposition of three layers, including

GaN nanowires with pentagon shape cross-section by ammonia-source molecular beam epitaxy

DOE PAGES

Lin, Yong; Leung, Benjamin; Li, Qiming; ...

2015-07-14

In this study, ammonia-based molecular beam epitaxy (NH 3-MBE) was used to grow catalyst-assisted GaN nanowires on (11¯02) r-plane sapphire substrates. Dislocation free [112¯0] oriented nanowires are formed with pentagon shape cross-section, instead of the usual triangular shape facet configuration. Specifically, the cross-section is the result of the additional two nonpolar {101¯0} side facets, which appear due to a decrease in relative growth rate of the {101¯0} facets to the {101¯1} and {101¯1} facets under the growth regime in NH 3-MBE. Compared to GaN nanowires grown by Ni-catalyzed metal–organic chemical vapor deposition, the NH 3-MBE grown GaN nanowires show moremore » than an order of magnitude increase in band-edge to yellow luminescence intensity ratio, as measured by cathodoluminescence, indicating improved microstructural and optical properties.« less

MBE of (Hg,Cd)Te

DTIC Science & Technology

1988-10-01

deterioration in the CdTe and the nucleation and growth of 1InSb. It is possible that broadening of the interface profile is I caused by nonuniform sputtering...Night W4alon and EAo-Optbca Ft & lWir , VA 22060 #Condensed atteer & Radiation Branch, U.S. Navel Research Laboratory. Washington, D.C. 20375 * t

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baker, A. A.; Hesjedal, T.; Diamond Light Source, Didcot OX11 0DE

We present a miniaturized molecular beam epitaxy (miniMBE) system with an outer diameter of 206 mm, optimized for flexible and high-throughput operation. The three-chamber system, used here for oxide growth, consists of a sample loading chamber, a storage chamber, and a growth chamber. The growth chamber is equipped with eight identical effusion cell ports with linear shutters, one larger port for either a multi-pocket electron beam evaporator or an oxygen plasma source, an integrated cryoshroud, retractable beam-flux monitor or quartz-crystal microbalance, reflection high energy electron diffraction, substrate manipulator, main shutter, and quadrupole mass spectrometer. The system can be combined withmore » ultrahigh vacuum (UHV) end stations on synchrotron and neutron beamlines, or equivalently with other complex surface analysis systems, including low-temperature scanning probe microscopy systems. Substrate handling is compatible with most UHV surface characterization systems, as the miniMBE can accommodate standard surface science sample holders. We introduce the design of the system, and its specific capabilities and operational parameters, and we demonstrate the epitaxial thin film growth of magnetoelectric Cr{sub 2}O{sub 3} on c-plane sapphire and ferrimagnetic Fe{sub 3}O{sub 4} on MgO (001)« less

Creating Ruddlesden-Popper phases by hybrid molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Haislmaier, Ryan C.; Stone, Greg; Alem, Nasim; Engel-Herbert, Roman

2016-07-01

The synthesis of a 50 unit cell thick n = 4 Srn+1TinO3n+1 (Sr5Ti4O13) Ruddlesden-Popper (RP) phase film is demonstrated by sequentially depositing SrO and TiO2 layers in an alternating fashion using hybrid molecular beam epitaxy (MBE), where Ti was supplied using titanium tetraisopropoxide (TTIP). A detailed calibration procedure is outlined for determining the shuttering times to deposit SrO and TiO2 layers with precise monolayer doses using in-situ reflection high energy electron diffraction (RHEED) as feedback. Using optimized Sr and TTIP shuttering times, a fully automated growth of the n = 4 RP phase was carried out over a period of >4.5 h. Very stable RHEED intensity oscillations were observed over the entire growth period. The structural characterization by X-ray diffraction and high resolution transmission electron microscopy revealed that a constant periodicity of four SrTiO3 perovskite unit cell blocks separating the double SrO rocksalt layer was maintained throughout the entire film thickness with a very little amount of planar faults oriented perpendicular to the growth front direction. These results illustrate that hybrid MBE is capable of layer-by-layer growth with atomic level precision and excellent flux stability.

Photodetectors using III-V nitrides

DOEpatents

Moustakas, Theodore D.; Misra, Mira

1997-01-01

A photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The photodetector includes a substrate with interdigitated electrodes formed on its surface. The substrate has a sapphire base layer, a buffer layer formed from a III-V nitride and a single crystal III-V nitride film. The three layers are formed by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy (ECR-assisted MBE). Use of the ECR-assisted MBE process allows control and predetermination of the electrical properties of the photodetector.

Estimation of Carbon Dioxide Storage Capacity for Depleted Gas Reservoirs

NASA Astrophysics Data System (ADS)

Lai, Yen Ting; Shen, Chien-Hao; Tseng, Chi-Chung; Fan, Chen-Hui; Hsieh, Bieng-Zih

2015-04-01

A depleted gas reservoir is one of the best options for CO2 storage for many reasons. First of all, the storage safety or the caprock integrity has been proven because the natural gas was trapped in the formation for a very long period of time. Also the formation properties and fluid flow characteristics for the reservoir have been well studied since the discovery of the gas reservoir. Finally the surface constructions and facilities are very useful and relatively easy to convert for the use of CO2 storage. The purpose of this study was to apply an analytical approach to estimate CO2 storage capacity in a depleted gas reservoir. The analytical method we used is the material balance equation (MBE), which have been widely used in natural gas storage. We proposed a modified MBE for CO2 storage in a depleted gas reservoir by introducing the z-factors of gas, CO2 and the mixture of the two. The MBE can be derived to a linear relationship between the ratio of pressure to gas z-factor (p/z) and the cumulative term (Gp-Ginj, where Gp is the cumulative gas production and Ginj is the cumulative CO2 injection). The CO2 storage capacity can be calculated when constraints of reservoir recovery pressure are adopted. The numerical simulation was also used for the validation of the theoretical estimation of CO2 storage capacity from the MBE. We found that the quantity of CO2 stored is more than that of gas produced when the reservoir pressure is recovered from the abandon pressure to the initial pressure. This result was basically from the fact that the gas- CO2 mixture z-factors are lower than the natural gas z-factors in reservoir conditions. We also established a useful p/z plot to easily observe the pressure behavior of CO2 storage and efficiently calculate the CO2 storage capacity. The application of the MBE we proposed was demonstrated by a case study of a depleted gas reservoir in northwestern Taiwan. The estimated CO2 storage capacities from conducting reservoir simulation

Thermoelectric Properties of Epitaxial β-FeSi2 Thin Films on Si(111) and Approach for Their Enhancement

NASA Astrophysics Data System (ADS)

Taniguchi, Tatsuhiko; Sakane, Shunya; Aoki, Shunsuke; Okuhata, Ryo; Ishibe, Takafumi; Watanabe, Kentaro; Suzuki, Takeyuki; Fujita, Takeshi; Sawano, Kentarou; Nakamura, Yoshiaki

2017-05-01

We have investigated the intrinsic thermoelectric properties of epitaxial β-FeSi2 thin films and the impact of phosphorus (P) doping. Epitaxial β-FeSi2 thin films with single phase were grown on Si(111) substrates by two different techniques in an ultrahigh-vacuum molecular beam epitaxy (MBE) system: solid-phase epitaxy (SPE), where iron silicide films formed by codeposition of Fe and Si at room temperature were recrystallized by annealing at 530°C to form epitaxial β-FeSi2 thin films on Si(111) substrates, and MBE of β-FeSi2 thin films on epitaxial β-FeSi2 templates formed on Si(111) by reactive deposition epitaxy (RDE) at 530°C (RDE + MBE). Epitaxial SPE thin films based on codeposition had a flatter surface and more abrupt β-FeSi2/Si(111) interface than epitaxial RDE + MBE thin films. We investigated the intrinsic thermoelectric properties of the epitaxial β-FeSi2 thin films on Si(111), revealing lower thermal conductivity and higher electrical conductivity compared with bulk β-FeSi2. We also investigated the impact of doping on the Seebeck coefficient of bulk and thin-film β-FeSi2. A route to enhance the thermoelectric performance of β-FeSi2 is proposed, based on (1) fabrication of thin-film structures for high electrical conductivity and low thermal conductivity, and (2) proper choice of doping for high Seebeck coefficient.

Effects of a hyperonic many-body force on BΛ values of hypernuclei

NASA Astrophysics Data System (ADS)

Isaka, M.; Yamamoto, Y.; Rijken, Th. A.

2017-04-01

The stiff equation of state (EoS) giving the neutron-star mass of 2 M⊙ suggests the existence of strongly repulsive many-body effects (MBE) not only in nucleon channels but also in hyperonic ones. As a specific model for MBE, the repulsive multi-Pomeron exchange potential (MPP) is added to the two-body interaction together with the phenomenological three-body attraction. For various versions of the Nijmegen interaction models, the MBE parts are determined so as to reproduce the observed data of BΛ. The mass dependence of BΛ values is shown to be reproduced well by adding MBE to the strong MPP repulsion, assuring the stiff EoS of hyperon-mixed neutron-star matter, in which P -state components of the adopted interaction model lead to almost vanishing contributions. The nuclear matter Λ N G -matrix interactions are derived and used in Λ hypernuclei on the basis of the averaged-density approximation (ADA). The BΛ values of hypernuclei with 9 ≤A ≤59 are analyzed in the framework of antisymmetrized molecular dynamics with use of the two types of Λ N G -matrix interactions including strong and weak MPP repulsions. The calculated values of BΛ reproduce the experimental data well within a few hundred keV. The values of BΛ in p states also can be reproduced well, when the ADA is modified to be suitable also for weakly bound Λ states.

Exceptionally large migration length of carbon and topographically-facilitated self-limiting molecular beam epitaxial growth of graphene on hexagonal boron nitride

DOE Office of Scientific and Technical Information (OSTI.GOV)

Plaut, Annette S.; Wurstbauer, Ulrich; Wang, Sheng

We demonstrate growth of single-layer graphene (SLG) on hexagonal boron nitride (h-BN) by molecular beam epitaxy (MBE), only limited in area by the finite size of the h-BN flakes. Using atomic force microscopy and micro-Raman spectroscopy, we show that for growth over a wide range of temperatures (500 °C – 1000 °C) the deposited carbon atoms spill off the edge of the h-BN flakes. We attribute this spillage to the very high mobility of the carbon atoms on the BN basal plane, consistent with van der Waals MBE. The h-BN flakes vary in size from 30 μm to 100 μm,more » thus demonstrating that the migration length of carbon atoms on h-BN is greater than 100 μm. When sufficient carbon is supplied to compensate for this loss, which is largely due to this fast migration of the carbon atoms to and off the edges of the h-BN flake, we find that the best growth temperature for MBE SLG on h-BN is ~950 °C. Self-limiting graphene growth appears to be facilitated by topographic h-BN surface features: We have thereby grown MBE self-limited SLG on an h-BN ridge. This opens up future avenues for precisely tailored fabrication of nano- and hetero-structures on pre-patterned h-BN surfaces for device applications.« less

Supporting 3rd-grade students model-based explanations about groundwater: a quasi-experimental study of a curricular intervention

NASA Astrophysics Data System (ADS)

Zangori, Laura; Vo, Tina; Forbes, Cory T.; Schwarz, Christina V.

2017-07-01

Scientific modelling is a key practice in which K-12 students should engage to begin developing robust conceptual understanding of natural systems, including water. However, little past research has explored primary students' learning about groundwater, engagement in scientific modelling, and/or the ways in which teachers conceptualise and cultivate model-based science learning environments. We are engaged in a multi-year project designed to support 3rd-grade students' formulation of model-based explanations (MBE) for hydrologic phenomenon, including groundwater, through curricular and instructional support. In this quasi-experimental comparative study of five 3rd-grade classrooms, we present findings from analysis of students' MBE generated as part of experiencing a baseline curricular intervention (Year 1) and a modelling-enhanced curricular intervention (Year 2). Findings show that students experiencing the latter version of the unit made significant gains in both conceptual understanding and reasoning about groundwater, but that these gains varied by classroom. Overall, student gains from Year 1 to Year 2 were attributed to changes in two of the five classrooms in which students were provided additional instructional supports and scaffolds to enhance their MBE for groundwater. Within these two classrooms, the teachers enacted the Year 2 curriculum in unique ways that reflected their deeper understanding about the practices of modelling. Their enactments played a critical role in supporting students' MBE about groundwater. Study findings contribute to research on scientific modelling in elementary science learning environments and have important implications for teachers and curriculum developers.

Carrier Concentration Control of GaSb/GaInAsSb System

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lazzari, J.-L.; Anda, F. de; Nieto, J.

2007-02-22

The residual carrier concentration of GaSb and GaSb-lattice matched Ga1-xInxAsySb1-y alloys (x = 0.12-0.26; y = 0.9x) grown by liquid phase epitaxy (LPE) and molecular beam epitaxy (MBE) was studied as a function of growth temperature, V/III ratio and alloy composition. Typical carrier concentrations p {approx} 2-3x1016 cm-3 were obtained for undoped GaSb grown by MBE at 480 deg. C, by LPE from Ga-rich melt at low temperature (400 deg. C), and by LPE from Sb-rich melts at {approx}600 deg. C. The native acceptor defect responsible of the high p-type residual doping in GaSb is reduced when the indium concentrationmore » is increased, and disappears for indium rich alloys (x = 0.23, 0.26). Tellurium compensation was used for controlled n-type doping in the (0.05-30)x1017 cm-3 range. A maximum of free carrier concentration was 1.5x1018 cm-3 for LPE layers, 2x1018 cm-3 for MBE layers grown at 1.0 {mu}m/h, 3.5x1018 cm-3 for MBE layers grown at 0.2 {mu}m/h. SIMS measurements showed Te concentrations of more than 1020 at/cm3, suggesting the formation of ternary GaSb1-xTex solid solution.« less

Photodetectors using III-V nitrides

DOEpatents

Moustakas, T.D.; Misra, M.

1997-10-14

A photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The photodetector includes a substrate with interdigitated electrodes formed on its surface. The substrate has a sapphire base layer, a buffer layer formed from a III-V nitride and a single crystal III-V nitride film. The three layers are formed by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy (ECR-assisted MBE). Use of the ECR-assisted MBE process allows control and predetermination of the electrical properties of the photodetector. 24 figs.

Heavily boron-doped Si layers grown below 700 C by molecular beam epitaxy using a HBO2 source

NASA Technical Reports Server (NTRS)

Lin, T. L.; Fathauer, R. W.; Grunthaner, P. J.

1989-01-01

Boron doping in Si layers grown by molecular beam epitaxy (MBE) at 500-700 C using an HBO2 source has been studied. The maximum boron concentration without detectable oxygen incorporation for a given substrate temperature and Si growth rate has been determined using secondary-ion mass spectrometry analysis. Boron present in the Si MBE layers grown at 550-700 C was found to be electrically active, independent of the amount of oxygen incorporation. By reducing the Si growth rate, highly boron-doped layers have been grown at 600 C without detectable oxygen incorporation.

Non-equilibrium GaNAs Alloys with Band Gap Ranging from 0.8-3.4 eV

DTIC Science & Technology

2010-01-01

isova- lent atoms substitute more electronegative host atoms as occurs in the dilute N-rich GaN1-xAsx alloys. In this case due to the substantial...6]. In this study low temperature MBE (LT-MBE) has been employed to overcome the mis- cibility gap in the GaN1-xAsx, allowing the synthesis of GaN1...600 °C. The same active N flux with the total N beam equivalent pressure ( BEP ) ~1.5 10-5 Torr and the same deposition time (2hr) were used for the

An atomic carbon source for high temperature molecular beam epitaxy of graphene.

PubMed

Albar, J D; Summerfield, A; Cheng, T S; Davies, A; Smith, E F; Khlobystov, A N; Mellor, C J; Taniguchi, T; Watanabe, K; Foxon, C T; Eaves, L; Beton, P H; Novikov, S V

2017-07-26

We report the use of a novel atomic carbon source for the molecular beam epitaxy (MBE) of graphene layers on hBN flakes and on sapphire wafers at substrate growth temperatures of ~1400 °C. The source produces a flux of predominantly atomic carbon, which diffuses through the walls of a Joule-heated tantalum tube filled with graphite powder. We demonstrate deposition of carbon on sapphire with carbon deposition rates up to 12 nm/h. Atomic force microscopy measurements reveal the formation of hexagonal moiré patterns when graphene monolayers are grown on hBN flakes. The Raman spectra of the graphene layers grown on hBN and sapphire with the sublimation carbon source and the atomic carbon source are similar, whilst the nature of the carbon aggregates is different - graphitic with the sublimation carbon source and amorphous with the atomic carbon source. At MBE growth temperatures we observe etching of the sapphire wafer surface by the flux from the atomic carbon source, which we have not observed in the MBE growth of graphene with the sublimation carbon source.

InGaN/GaN tunnel junctions for hole injection in GaN light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Krishnamoorthy, Sriram, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu; Akyol, Fatih; Rajan, Siddharth, E-mail: krishnamoorthy.13@osu.edu, E-mail: rajan@ece.osu.edu

InGaN/GaN tunnel junction contacts were grown using plasma assisted molecular beam epitaxy (MBE) on top of a metal-organic chemical vapor deposition (MOCVD)-grown InGaN/GaN blue (450 nm) light emitting diode. A voltage drop of 5.3 V at 100 mA, forward resistance of 2 × 10{sup −2} Ω cm{sup 2}, and a higher light output power compared to the reference light emitting diodes (LED) with semi-transparent p-contacts were measured in the tunnel junction LED (TJLED). A forward resistance of 5 × 10{sup −4} Ω cm{sup 2} was measured in a GaN PN junction with the identical tunnel junction contact as the TJLED, grown completely by MBE. Themore » depletion region due to the impurities at the regrowth interface between the MBE tunnel junction and the MOCVD-grown LED was hence found to limit the forward resistance measured in the TJLED.« less

Growth of AlGaN under the conditions of significant gallium evaporation: Phase separation and enhanced lateral growth

NASA Astrophysics Data System (ADS)

Mayboroda, I. O.; Knizhnik, A. A.; Grishchenko, Yu. V.; Ezubchenko, I. S.; Zanaveskin, Maxim L.; Kondratev, O. A.; Presniakov, M. Yu.; Potapkin, B. V.; Ilyin, V. A.

2017-09-01

The growth kinetics of AlGaN in NH3 MBE under significant Ga desorption was studied. It was found that the addition of gallium stimulates 2D growth and provides better morphology of films compared to pure AlN. The effect was experimentally observed at up to 98% desorption of the impinging gallium. We found that under the conditions of significant thermal desorption, larger amounts of gallium were retained at lateral boundaries of 3D surface features than at flat terraces because of the higher binding energy of Ga atoms at specific surface defects. The selective accumulation of gallium resulted in an increase in the lateral growth component through the formation of the Ga-enriched AlGaN phase at boundaries of 3D surface features. We studied the temperature dependence of AlGaN growth rate and developed a kinetic model analytically describing this dependence. As the model was in good agreement with the experimental data, we used it to estimate the increase in the binding energy of Ga atoms at surface defects compared to terrace surface sites using data on the Ga content in different AlGaN phases. We also applied first-principles calculations to the thermodynamic analysis of stable configurations on the AlN surface and then used these surface configurations to compare the binding energy of Ga atoms at terraces and steps. Both first-principles calculations and analytical estimations of the experimental results gave similar values of difference in binding energies; this value is 0.3 eV. Finally, it was studied experimentally whether gallium can act as a surfactant in AlN growth by NH3 MBE at elevated temperatures. Gallium application has allowed us to grow a 300 nm thick AlN film with a RMS surface roughness of 2.2 Å over an area of 10 × 10 μm and a reduced density of screw dislocations.

Stabilization and enhanced energy gap by Mg doping in ɛ-phase Ga2O3 thin films

NASA Astrophysics Data System (ADS)

Bi, Xiaoyu; Wu, Zhenping; Huang, Yuanqi; Tang, Weihua

2018-02-01

Mg-doped Ga2O3 thin films with different doping concentrations were deposited on sapphire substrates using laser molecular beam epitaxy (L-MBE) technique. X-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS) and ultraviolet-visible (UV-vis) absorption spectrum were used to characterize the crystal structure and optical properties of the as-grown films. Compared to pure Ga2O3 thin film, the Mg-doped thin films have transformed from the most stable β-phase into ɛ-phase. The absorption edge shifted to about 205 nm and the optical bandgap increased to ˜ 6 eV. These properties reveal that Mg-doped Ga2O3 films may have potential applications in the field of deep ultraviolet optoelectronic devices, such as deep ultraviolet photodetectors, short wavelength light emitting devices and so on.

Detecting changes in ultrasound backscattered statistics by using Nakagami parameters: Comparisons of moment-based and maximum likelihood estimators.

PubMed

Lin, Jen-Jen; Cheng, Jung-Yu; Huang, Li-Fei; Lin, Ying-Hsiu; Wan, Yung-Liang; Tsui, Po-Hsiang

2017-05-01

The Nakagami distribution is an approximation useful to the statistics of ultrasound backscattered signals for tissue characterization. Various estimators may affect the Nakagami parameter in the detection of changes in backscattered statistics. In particular, the moment-based estimator (MBE) and maximum likelihood estimator (MLE) are two primary methods used to estimate the Nakagami parameters of ultrasound signals. This study explored the effects of the MBE and different MLE approximations on Nakagami parameter estimations. Ultrasound backscattered signals of different scatterer number densities were generated using a simulation model, and phantom experiments and measurements of human liver tissues were also conducted to acquire real backscattered echoes. Envelope signals were employed to estimate the Nakagami parameters by using the MBE, first- and second-order approximations of MLE (MLE 1 and MLE 2 , respectively), and Greenwood approximation (MLE gw ) for comparisons. The simulation results demonstrated that, compared with the MBE and MLE 1 , the MLE 2 and MLE gw enabled more stable parameter estimations with small sample sizes. Notably, the required data length of the envelope signal was 3.6 times the pulse length. The phantom and tissue measurement results also showed that the Nakagami parameters estimated using the MLE 2 and MLE gw could simultaneously differentiate various scatterer concentrations with lower standard deviations and reliably reflect physical meanings associated with the backscattered statistics. Therefore, the MLE 2 and MLE gw are suggested as estimators for the development of Nakagami-based methodologies for ultrasound tissue characterization. Copyright © 2017 Elsevier B.V. All rights reserved.

Surface diffusion in homoepitaxial SrTiO3 thin films

NASA Astrophysics Data System (ADS)

Woo, Chang-Su; Chu, Kanghyun; Song, Jong-Hyun; Yang, Chan-Ho; Charm Lab Team; Nano Spintronics Lab Collaboration

The development of growth techniques such as molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) has facilitated growths of complex oxide thin films at the atomic level .... Systematic studies on surface diffusion process of adatoms using theoretical and experimental methods allow us to understand growth mechanism enabling atomically flat thin film surface. In this presentation, we introduce the synthesis of homoepitaxial SrTiO3 thin films using a PLD equipped with reflection of high energy electron diffraction (RHEED). We determine the surface diffusion time as a function of growth temperature and extract the activation energy of diffusion on the surface by in-situ monitoring the RHEED intensity recovery during the film deposition. From the extracted experimental results, we discuss the microscopic mechanism of the diffusion process

Electronic Band Structure Tuning of Highly-Mismatched-Alloys for Energy Conversion Applications

NASA Astrophysics Data System (ADS)

Ting, Min

Highly-mismatched alloys: ZnO1-xTe x and GaN1-xSb x are discussed within the context of finding the suitable material for a cost-effective Si-based tandem solar cell (SBTSC). SBTSC is an attractive concept for breaking through the energy conversion efficiency theoretical limit of a single junction solar cell. Combining with a material of 1.8 eV band gap, SBTSC can theoretically achieve energy conversion efficiency > 45%. ZnO and GaN are wide band gap semiconductors. Alloying Te in ZnO and alloying Sb in GaN result in large band gap reduction to < 2 eV from 3.3 eV and 3.4 eV respectively. The band gap reduction is majorly achieved by the upward shift of valence band (VB). Incorporating Te in ZnO modifies the VB of ZnO through the valence-band anticrossing (VBAC) interaction between localized Te states and ZnO VB delocalized states, which forms a Te-derived VB at 1 eV above the host VB. Similar band structure modification is resulted from alloying Sb in GaN. Zn1-xTex and GaN 1-xSbx thin films are synthesized across the whole composition range by pulsed laser deposition (PLD) and low temperature molecular beam epitaxy (LT-MBE) respectively. The electronic band edges of these alloys are measured by synchrotron X-ray absorption, emission, and the X-ray photoelectron spectroscopies. Modeling the optical absorption coefficient with the band anticrossing (BAC) model revealed that the Te and Sb defect levels to be at 0.99 eV and 1.2 eV above the VB of ZnO and GaN respectively. Electrically, Zn1-xTex is readily n-type conductive and GaN1-xSbx is strongly p-type conductive. A heterojunction device of p-type GaN 0.93Sb0.07 with n-type ZnO0.77Te0.93 upper cell (band gap at 1.8 eV) on Si bottom cell is proposed as a promising SBTSC device.

Study of InGaAs-based modulation doped field effect transistor structures using variable-angle spectroscopic ellipsometry

NASA Technical Reports Server (NTRS)

Alterovitz, S. A.; Sieg, R. M.; Yao, H. D.; Snyder, P. G.; Woollam, J. A.; Pamulapati, J.; Bhattacharya, P. K.; Sekula-Moise, P. A.

1991-01-01

Variable-angle spectroscopic ellipsometry was used to estimate the thicknesses of all layers within the optical penetration depth of InGaAs-based modulation doped field effect transistor structures. Strained and unstrained InGaAs channels were made by molecular beam epitaxy (MBE) on InP substrates and by metal-organic chemical vapor deposition on GaAs substrates. In most cases, ellipsometrically determined thicknesses were within 10% of the growth-calibration results. The MBE-made InGaAs strained layers showed large strain effects, indicating a probable shift in the critical points of their dielectric function toward the InP lattice-matched concentration.

Ab-initio study of boron incorporation and compositional limits at GaN and AlN (0001) surfaces

NASA Astrophysics Data System (ADS)

Lymperakis, L.

2018-06-01

Density functional theory calculations are employed to investigate B incorporation at the GaN(0001) and AlN(0001) surfaces. It is found that under typical metal-organic chemical vapor deposition (MOCVD) and metal rich molecular beam epitaxy (MBE) conditions, the maximum B contents at the surfaces are in the order of 3% for GaN and 15% for AlN. Under MBE N-rich growth conditions the calculations reveal a rehybridization enhanced solubility mechanism that dominates at the surface. This mechanism offers a promising route to kinetically stabilize B contents above the bulk solubility limit and as high as 25%.

Perspective: Oxide molecular-beam epitaxy rocks!

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schlom, Darrell G., E-mail: schlom@cornell.edu

2015-06-01

Molecular-beam epitaxy (MBE) is the “gold standard” synthesis technique for preparing semiconductor heterostructures with high purity, high mobility, and exquisite control of layer thickness at the atomic-layer level. Its use for the growth of multicomponent oxides got off to a rocky start 30 yr ago, but in the ensuing decades, it has become the definitive method for the preparation of oxide heterostructures too, particularly when it is desired to explore their intrinsic properties. Examples illustrating the unparalleled achievements of oxide MBE are given; these motivate its expanding use for exploring the potentially revolutionary states of matter possessed by oxide systems.

Comparative analysis of germanium-silicon quantum dots formation on Si(100), Si(111) and Sn/Si(100) surfaces

NASA Astrophysics Data System (ADS)

Lozovoy, Kirill; Kokhanenko, Andrey; Voitsekhovskii, Alexander

2018-02-01

In this paper theoretical modeling of formation and growth of germanium-silicon quantum dots in the method of molecular beam epitaxy (MBE) on different surfaces is carried out. Silicon substrates with crystallographic orientations (100) and (111) are considered. Special attention is paid to the question of growth of quantum dots on the silicon surface covered by tin, since germanium-silicon-tin system is extremely important for contemporary nano- and optoelectronics: for creation of photodetectors, solar cells, light-emitting diodes, and fast-speed transistors. A theoretical approach for modeling growth processes of such semiconductor compounds during the MBE is presented. Both layer-by-layer and island nucleation stages in the Stranski-Krastanow growth mode are described. A change in free energy during transition of atoms from the wetting layer to an island, activation barrier of the nucleation, critical thickness of 2D to 3D transition, as well as surface density and size distribution function of quantum dots in these systems are calculated with the help of the established model. All the theoretical speculations are carried out keeping in mind possible device applications of these materials. In particular, it is theoretically shown that using of the Si(100) surface covered by tin as a substrate for Ge deposition may be very promising for increasing size homogeneity of quantum dot array for possible applications in low-noise selective quantum dot infrared photodetectors.

Creating Ruddlesden-Popper phases by hybrid molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haislmaier, Ryan C.; Stone, Greg; Alem, Nasim

2016-07-25

The synthesis of a 50 unit cell thick n = 4 Sr{sub n+1}Ti{sub n}O{sub 3n+1} (Sr{sub 5}Ti{sub 4}O{sub 13}) Ruddlesden-Popper (RP) phase film is demonstrated by sequentially depositing SrO and TiO{sub 2} layers in an alternating fashion using hybrid molecular beam epitaxy (MBE), where Ti was supplied using titanium tetraisopropoxide (TTIP). A detailed calibration procedure is outlined for determining the shuttering times to deposit SrO and TiO{sub 2} layers with precise monolayer doses using in-situ reflection high energy electron diffraction (RHEED) as feedback. Using optimized Sr and TTIP shuttering times, a fully automated growth of the n = 4 RP phase was carried outmore » over a period of >4.5 h. Very stable RHEED intensity oscillations were observed over the entire growth period. The structural characterization by X-ray diffraction and high resolution transmission electron microscopy revealed that a constant periodicity of four SrTiO{sub 3} perovskite unit cell blocks separating the double SrO rocksalt layer was maintained throughout the entire film thickness with a very little amount of planar faults oriented perpendicular to the growth front direction. These results illustrate that hybrid MBE is capable of layer-by-layer growth with atomic level precision and excellent flux stability.« less

Comparative analysis of germanium-silicon quantum dots formation on Si(100), Si(111) and Sn/Si(100) surfaces.

PubMed

Lozovoy, Kirill; Kokhanenko, Andrey; Voitsekhovskii, Alexander

2018-02-02

In this paper theoretical modeling of formation and growth of germanium-silicon quantum dots in the method of molecular beam epitaxy (MBE) on different surfaces is carried out. Silicon substrates with crystallographic orientations (100) and (111) are considered. Special attention is paid to the question of growth of quantum dots on the silicon surface covered by tin, since germanium-silicon-tin system is extremely important for contemporary nano- and optoelectronics: for creation of photodetectors, solar cells, light-emitting diodes, and fast-speed transistors. A theoretical approach for modeling growth processes of such semiconductor compounds during the MBE is presented. Both layer-by-layer and island nucleation stages in the Stranski-Krastanow growth mode are described. A change in free energy during transition of atoms from the wetting layer to an island, activation barrier of the nucleation, critical thickness of 2D to 3D transition, as well as surface density and size distribution function of quantum dots in these systems are calculated with the help of the established model. All the theoretical speculations are carried out keeping in mind possible device applications of these materials. In particular, it is theoretically shown that using of the Si(100) surface covered by tin as a substrate for Ge deposition may be very promising for increasing size homogeneity of quantum dot array for possible applications in low-noise selective quantum dot infrared photodetectors.

Interfacing epitaxial oxides to gallium nitride

NASA Astrophysics Data System (ADS)

Losego, Mark Daniel

Molecular beam epitaxy (MBE) is lauded for its ability to control thin film material structures at the atomic level. This precision of control can improve performance of microelectronic devices and cultivate the development of novel device structures. This thesis explores the utility of MBE for designing interfaces between oxide epilayers and the wide band gap semiconductor gallium nitride (GaN). The allure of wide gap semiconductor microelectronics (like GaN, 3.4 eV) is their ability to operate at higher frequencies, higher powers, and higher temperatures than current semiconductor platforms. Heterostructures between ferroelectric oxides and GaN are also of interest for studying the interaction between GaN's fixed polarization and the ferroelectric's switchable polarization. Two major obstacles to successful integration of oxides with GaN are: (1) interfacial trap states; and (2) small electronic band offsets across the oxide/nitride interface due to the semiconductor's large band gap. For this thesis, epitaxial rocksalt oxide interfacial layers (˜8 eV band gap) are investigated as possible solutions to overcoming the challenges facing oxide integration with GaN. The cubic close-packed structure of rocksalt oxides forms a suitable epitaxial interface with the hexagonal close-packed wurtzite lattice of GaN. Three rocksalt oxide compounds are investigated in this thesis: MgO, CaO, and YbO. All are found to have a (111) MO || (0001) GaN; <1 10> MO || <11 20> GaN epitaxial relationship. Development of the epilayer microstructure is dominated by the high-energy polar growth surface (drives 3D nucleation) and the interfacial symmetry, which permits the formation of twin boundaries. Using STEM, strain relief for these ionicly bonded epilayers is observed to occur through disorder within the initial monolayer of growth. All rocksalt oxides demonstrate chemical stability with GaN to >1000°C. Concurrent MBE deposition of MgO and CaO is known to form complete solid

Surfactant-Enabled Epitaxy of Smooth, Cubic Oxides on Gallium Nitride

NASA Astrophysics Data System (ADS)

Paisley, Elizabeth Aldret

Epitaxial integration of polar oxides with polar semiconductors presents the possibility of tunable 2D charge carriers at polar interfaces and integration of non-linear dielectric properties if defect densities are low and interfaces are smooth. Achieving this in materials with highly dissimilar structure and symmetry remains a serious challenge and requires a dramatically improved understanding of chemically and structurally dissimilar interfaces and their synthesis. Current efforts to achieve such devices are impeded by the fact that many polar oxides have a close-packed cubic substructure that requires the oxide to grow along the {111} direction, which is compatible with hexagonal (0002) GaN. Since the {111} direction is not the lowest energy face for these oxides, conventional methods used to synthesize these oxides usually allow the interface to compensate by forming facets resulting in defects, detrimental to the sustaining interface conductivity. This thesis demonstrates a new methodology developed to allow in situ stabilization of desired crystallographic habits where water vapor is utilized during growth to hydroxylate the oxide (111) surfaces, changing the equilibrium habit from cubic to octahedral, eliminating the (100)-faceting tendency. Bulk thermodynamic calculations show that a hydroxide termination can stabilize the (111)-face. Further, Ca(OH)2 (the structure likely to represent such termination) provides a low-energy surface with six-fold symmetry and atomic registry matching {111}-CaO and GaN. Additionally, the relative free energies of formation for CaO and Ca(OH)2 provide an adequate processing window to avoid competition between oxide and hydroxide deposition. This approach is demonstrated for three model systems of rocksalt oxides grown along a polar direction on GaN: MgO, CaO, and lattice-matched compositions: Mg0.52Ca0.48O. MBE growth of smooth (111) CaO is demonstrated using RHEED intensity vs. time oscillations that show layer

Robust inference in summary data Mendelian randomization via the zero modal pleiotropy assumption.

PubMed

Hartwig, Fernando Pires; Davey Smith, George; Bowden, Jack

2017-12-01

Mendelian randomization (MR) is being increasingly used to strengthen causal inference in observational studies. Availability of summary data of genetic associations for a variety of phenotypes from large genome-wide association studies (GWAS) allows straightforward application of MR using summary data methods, typically in a two-sample design. In addition to the conventional inverse variance weighting (IVW) method, recently developed summary data MR methods, such as the MR-Egger and weighted median approaches, allow a relaxation of the instrumental variable assumptions. Here, a new method - the mode-based estimate (MBE) - is proposed to obtain a single causal effect estimate from multiple genetic instruments. The MBE is consistent when the largest number of similar (identical in infinite samples) individual-instrument causal effect estimates comes from valid instruments, even if the majority of instruments are invalid. We evaluate the performance of the method in simulations designed to mimic the two-sample summary data setting, and demonstrate its use by investigating the causal effect of plasma lipid fractions and urate levels on coronary heart disease risk. The MBE presented less bias and lower type-I error rates than other methods under the null in many situations. Its power to detect a causal effect was smaller compared with the IVW and weighted median methods, but was larger than that of MR-Egger regression, with sample size requirements typically smaller than those available from GWAS consortia. The MBE relaxes the instrumental variable assumptions, and should be used in combination with other approaches in sensitivity analyses. © The Author 2017. Published by Oxford University Press on behalf of the International Epidemiological Association

Two color high operating temperature HgCdTe photodetectors grown by molecular beam epitaxy on silicon substrates

NASA Astrophysics Data System (ADS)

Velicu, S.; Bommena, R.; Morley, M.; Zhao, J.; Fahey, S.; Cowan, V.; Morath, C.

2013-09-01

The development of a broadband IR focal plane array poses several challenges in the area of detector design, material, device physics, fabrication process, hybridization, integration and testing. The purpose of our research is to address these challenges and demonstrate a high-performance IR system that incorporates a HgCdTe-based detector array with high uniformity and operability. Our detector architecture, grown using molecular beam epitaxy (MBE), is vertically integrated, leading to a stacked detector structure with the capability to simultaneously detect in two spectral bands. MBE is the method of choice for multiplelayer HgCdTe growth because it produces material of excellent quality and allows composition and doping control at the atomic level. Such quality and control is necessary for the fabrication of multicolor detectors since they require advanced bandgap engineering techniques. The proposed technology, based on the bandgap-tunable HgCdTe alloy, has the potential to extend the broadband detector operation towards room temperature. We present here our modeling, MBE growth and device characterization results, demonstrating Auger suppression in the LWIR band and diffusion limited behavior in the MWIR band.

Solar Activity Studies using Microwave Imaging Observations

NASA Technical Reports Server (NTRS)

Gopalswamy, N.

2016-01-01

We report on the status of solar cycle 24 based on polar prominence eruptions (PEs) and microwave brightness enhancement (MBE) information obtained by the Nobeyama radioheliograph. The north polar region of the Sun had near-zero field strength for more than three years (2012-2015) and ended only in September 2015 as indicated by the presence of polar PEs and the lack of MBE. The zero-polar-field condition in the south started only around 2013, but it ended by June 2014. Thus the asymmetry in the times of polarity reversal switched between cycle 23 and 24. The polar MBE is a good proxy for the polar magnetic field strength as indicated by the high degree of correlation between the two. The cross-correlation between the high- and low-latitude MBEs is significant for a lag of approximately 5.5 to 7.3 years, suggesting that the polar field of one cycle indicates the sunspot number of the next cycle in agreement with the Babcock-Leighton mechanism of solar cycles. The extended period of near-zero field in the north-polar region should result in a weak and delayed sunspot activity in the northern hemisphere in cycle 25.

Elimination of oval defects in epilayers by using chemical beam epitaxy

NASA Astrophysics Data System (ADS)

Tsang, W. T.

1985-06-01

One ubiquitous problem that continues to haunt over molecular beam epitaxy (MBE) persistently throughout all these year and still without a good controllable solution is the presence of oval defects in gallium-containing compound semiconductor epilayers. While these defects have not presented major problems for discrete devices, they are likely to be a serious obstacle for integrated circuit applications. We showed that oval defects were present in GaAs and In0.53Ga0.47As epilayers grown by conventional MBE process using elemental Ga and In as group III sources, and either solid As4 or thermally cracked As4 from gas mixtures of trimethylarsine and hydrogen. On the other hand, the use of the chemical beam epitaxy in which the Ga and In were derived by thermal pyrolysis of their metal alkyls at the heated substrate surface resulted reproducibly in epilayers free of oval defects over the entire substrate surface of ˜8 cm diameter (limited by the substrate holder size). On the basis of the present results it is evident that the oval defects were related to the use of elemental Ga melt as the evaporant in conventional MBE.

Development of High Quantum Efficiency UV/Blue Photocathode Epitaxial Semiconductor Heterostructures for Scintillation and Cherenkov Radiation Detection

NASA Technical Reports Server (NTRS)

Leopold, Daniel J.

2002-01-01

The primary goal of this research project was to further extend the use of advanced heteroepitaxial-semiconductor crystal growth techniques such as molecular beam epitaxy (MBE) and to demonstrate significant gains in UV/blue photonic detection by designing and fabricating atomically-tailored heteroepitaxial GaAlN/GaInN photocathode device structures. This NASA Explorer technology research program has focused on the development of photocathodes for Cherenkov and scintillation radiation detection. Support from the program allowed us to enhance our MBE system to include a nitrogen plasma source and a magnetic bearing turbomolecular pump for delivery and removal of high purity atomic nitrogen during GaAlN/GaInN film growth. Under this program we have also designed, built and incorporated a cesium activation stage. In addition, a connected UHV chamber with photocathode transfer/positioner components as well as a hybrid phototube stage was designed and built to make in-situ quantum efficiency measurements without ever having to remove the photocathodes from UHV conditions. Thus we have constructed a system with the capability to couple atomically-tailored MBE-grown photocathode heterostructures with real high gain readout devices for single photon detection evaluation.

Intelligent poly (vinyl alcohol)-chitosan nanoparticles-mulberry extracts films capable of monitoring pH variations.

PubMed

Ma, Qianyun; Liang, Tieqiang; Cao, Lele; Wang, Lijuan

2018-03-01

The aim of this study was to prepare a visually responsive intelligent film based on poly (vinyl alcohol) (PVA), chitosan nanoparticles (CHNPs) and mulberry extracts (MBE). CHNPs were first prepared by using ionotropic gelation method to enhance the mechanical properties of PVA based films. The morphology, particle size, zeta potential and crystallinity of CHNPs were measured. The resultant CHNPs were spherical with a diameter of 381.2nm, with high stability and a zeta potential of 49.1±1.33mV. The film with 6% CHNPs (P-C6) had the highest tensile strength (∼73.43MPa). MBE was incorporated into the P-C6 film. The film containing 20% MBE had the highest tensile strength and showed visible color responses to variations across pH 1-13. The film was tested by monitoring the spoilage of fish. The color of the film changed from red to green as the fish spoiled. Therefore, the pH responsive intelligent film developed here can be used as a package label to detect food spoilage. Copyright © 2017 Elsevier B.V. All rights reserved.

MBE growth of highly reproducible VCSELs

NASA Astrophysics Data System (ADS)

Houng, Y. M.; Tan, M. R. T.

1997-05-01

Advances in the design of heterojunction devices have placed stringent demands on the epitaxial material technologies required to fabricate these structures. The increased demand for more stringent tolerance and complex device structures have resulted in a situation where acceptable growth yields will be realized only if epitaxial growth is directly monitored and controlled in real time. We report the growth of 980- and 850-nm vertical cavity surface emitting lasers (VCSEL's) by gas-source molecular beam epitaxy (GSMBE), in which the pyrometric interferometry technique is used for in situ monitoring and feedback control of layer thickness to obtain the highly reproducible distributed Bragg reflectors (DBR) for VCSEL structures. This technique uses an optical pyrometer to measure emissivity oscillations of the growing epi-layer surface. The growing layer thickness can then be related to the emissivity oscillation signals. When the layer reaches the desired thickness, the growth of the subsequent layer is initiated. By making layer thickness measurements and control in real-time throughout the entire growth cycle of the structure, the Fabry-Perot resonance at the desired wavelength is reproducibly obtained. The run-to-run variation of the Fabry-Perot wavelength of VCSEL structures is < ± 0.4%. Using this technique, the group III fluxes can also be calibrated and corrected for flux drifts, thus we are able to control the gain peak of the active region with a run-to-run variation of less than 0.3%. Surface emitting laser diodes were fabricated and operated CW at room temperature. CW threshold currents of 3 and 5 mA are measured at room temperature for 980- and 850-nm lasers, respectively. Output powers higher than 25 mW for 980-nm and 12 mW for 850-nm devices are obtained.

Metamorphic distributed Bragg reflectors for the 1440–1600 nm spectral range: Epitaxy, formation, and regrowth of mesa structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Egorov, A. Yu., E-mail: anton@beam.ioffe.ru; Karachinsky, L. Ya.; Novikov, I. I.

It is shown that metamorphic In{sub 0.3}Ga{sub 0.7}As/In{sub 0.3}Al{sub 0.7}As distributed Bragg reflectors (DBRs) with a reflection band at 1440–1600 nm and a reflectance of no less than 0.999 can be fabricated by molecular beam epitaxy (MBE) on a GaAs substrate. It is demonstrated that mesa structures formed from metamorphic DBRs on a GaAs substrate can be regrown by MBE and microcavities can be locally formed in two separate epitaxial processes. The results obtained can find wide application in the fabrication of vertical-cavity surface-emitting lasers (VCSELs) with a buried tunnel junction.

Nano- and picosecond 3 μm Er: YSGG lasers using InAs as passive Q-switchers and mode-lockers

NASA Astrophysics Data System (ADS)

Vodopyanov, K. L.; Lukashev, A. V.; Phillips, C. C.

1993-01-01

Recent results are reported using ultra-thin molecular beam epitaxy (MBE)-grown InAs epilayers on GaAs substrates as passive shutters for 3 μm Er: YSGG lasers ( λ = 2.8 μm). The laser photon energy is 27% higher than the InAs bandgap at 300 K and bleaching occurs due to a band filling effect with a fast recovery time of < 100 ps. Depending on the resonator geometry two modes of operation can be achieved: Q-switched with pulse duration of 35 ns and 5-6 mJ energy (TEM 00 mode) and a Q-switched/mode-locked regime with an output in the form of a train of 30 pulses separated by a 4.3 ns interval, 0.25 mJ energy per spike and 30-50 ps pulse duration in a TEM 00-mode. The latter are the shortest pulses obtained with this lasing medium to date.

Thin film growth studies using time-resolved x-ray scattering

NASA Astrophysics Data System (ADS)

Kowarik, Stefan

2017-02-01

Thin-film growth is important for novel functional materials and new generations of devices. The non-equilibrium growth physics involved is very challenging, because the energy landscape for atomic scale processes is determined by many parameters, such as the diffusion and Ehrlich-Schwoebel barriers. We review the in situ real-time techniques of x-ray diffraction (XRD), x-ray growth oscillations and diffuse x-ray scattering (GISAXS) for the determination of structure and morphology on length scales from Å to µm. We give examples of time resolved growth experiments mainly from molecular thin film growth, but also highlight growth of inorganic materials using molecular beam epitaxy (MBE) and electrochemical deposition from liquids. We discuss how scaling parameters of rate equation models and fundamental energy barriers in kinetic Monte Carlo methods can be determined from fits of the real-time x-ray data.

Thin film growth studies using time-resolved x-ray scattering.

PubMed

Kowarik, Stefan

2017-02-01

Thin-film growth is important for novel functional materials and new generations of devices. The non-equilibrium growth physics involved is very challenging, because the energy landscape for atomic scale processes is determined by many parameters, such as the diffusion and Ehrlich-Schwoebel barriers. We review the in situ real-time techniques of x-ray diffraction (XRD), x-ray growth oscillations and diffuse x-ray scattering (GISAXS) for the determination of structure and morphology on length scales from Å to µm. We give examples of time resolved growth experiments mainly from molecular thin film growth, but also highlight growth of inorganic materials using molecular beam epitaxy (MBE) and electrochemical deposition from liquids. We discuss how scaling parameters of rate equation models and fundamental energy barriers in kinetic Monte Carlo methods can be determined from fits of the real-time x-ray data.

Strained-layer epitaxy of germanium-silicon alloys

NASA Astrophysics Data System (ADS)

Bean, J. C.

1985-10-01

Strained-layer epitaxy is presented as a developing technique for combining Si with other materials in order to obtain semiconductors with enhanced electronic properties. The method involves applying layers sufficiently thin so that the atoms deposited match the bonding configurations of the substrate crystal. When deposited on Si, a four-fold bonding pattern is retained, with a lowered interfacial energy and augmented stored strain energy in the epitaxial layer. The main problem which remains is building an epitaxial layer thick enough to yield desired epitaxial properties while avoiding a reversion to an unstrained structure. The application of a Ge layer to Si using MBE is described, along with the formation of heterojunction multi-layer superlattices, which can reduce the dislocation effects in some homojunctions. The technique shows promise for developing materials of use as bipolar transistors, optical detectors and fiber optic transmission devices.

Hybrid Molecular Beam Epitaxy for High Quality Strontium Titanate

NASA Astrophysics Data System (ADS)

Jalan, Bharat

2011-12-01

Advancement in thin film growth techniques drives new physics and technologies. Thin film growth approaches and characterization techniques have become more crucial than ever to design and evaluate many emerging materials systems, such as complex oxides. Complex oxides with the perovskite and related structures are fundamentally different from conventional semiconductors and exhibit much richer phenomena as diverse as ferroelectricity, superconductivity, and strongly-correlated Mott-Hubbard-type insulator characteristics. The structural quality of oxide films grown by molecular beam epitaxy (MBE) now matches that of epitaxial semiconductors. Stoichiometry control, however, remains a major challenge. The presence of large (˜tens of ppm) amounts of point defects and impurities, which are commonly present in thin films, has often made the realization and interpretation of intrinsic phenomena difficult. In this dissertation we first describe our work in the development of a hybrid MBE approach for the growth of high quality insulating SrTiO 3 films. The approach uses a combination of solid and metal-organic sources to supply the metals. Films grow in layer-by-layer and step-flow growth modes, with atomically smooth surfaces and an excellent structural quality that is only limited by those of the substrates. A major as- pect of this MBE technique is that it provides a route to stoichiometric SrTiO3. This is achieved by growing films within a "MBE growth window", in which the stoichiome- try is self-regulating, independent of the precise metal flux ratios. Despite the use of a chemical precursor that supply Ti, the carbon incorporation in the films remains below or in the low ppm range. This was achieved by growing films at relatively high temper- atures. We will discuss the transport properties of MBE grown SrTiO3 film. We show that excellent stoichiometry control and low intrinsic defect concentrations, afforded by MBE, allow for the high electron mobility in n

State-of-the-art MCT photodiodes for cutting-edge sensor applications by AIM

NASA Astrophysics Data System (ADS)

Figgemeier, H.; Hanna, S.; Eich, D.; Fries, P.; Mahlein, K.-M.; Wenisch, J.; Schirmacher, W.; Beetz, J.; Breiter, R.

2017-02-01

For about 30 years, AIM has been ranking among the leading global suppliers for high-performance MCT infrared detectors, with its portfolio spanning the photosensitivity cut-off range from the SWIR to the VLWIR and from 1st generation to 3rd generation FPA devices. To meet the market demands for SWaP-C- and IR-detectors with additional functionalities such as multicolor detection, AIM employs both LPE and MBE technology. From AIḾs line of highest-performance single color detectors fabricated by LPE, we will present our latest excellent results of 5.3 μm cut-off MWIR MCT detectors with 1024x768 pixels and a 10 μm pixel pitch. AIM's powerful low dark current LWIR and VLWIR p-on-n device technology on LPE-grown MCT has now been extended to the MWIR spectral range. A comparison of results from n-on-p and p-on-n MWIR MCT planar photodiode arrays is presented. Operating temperatures of 160 K and higher, in conjunction with low defect density and excellent thermal sensitivity (NETD) are attained. The results achieved for LPE MWIR are compared to MBE MWIR data. For both the cost-efficient production of MWIR single color MCT detectors, as well as 3rd generation multicolor MCT detectors, AIM makes use of MBE growth of MCT on large-area GaAs substrates. The now-available AIM MWIR single color MBE MCT detectors grown on GaAs are qualified, delivered, and have reached a maturity fully meeting customers' requirements. Representing AIM's multicolor detector development, latest test results on a 640x512 pixels with a 20 μm pitch design will be presented. The MWIR/MWIR diodes demonstrate high QE, very low color cross talk, and excellent NETD in conjunction with low defect densities.

Phototransistors Development and their Applications to Lidar

NASA Technical Reports Server (NTRS)

Abedin, M. N.; Refaat, Tamer F.; Ismail, Syed; Singh, Upendra N.

2007-01-01

Custom-designed two-micron phototransistors have been developed using Liquid Phase Epitaxy (LPE), Molecular Beam Epitaxy (MBE) and Metal-Organic Chemical Vapor Deposition (MOCVD) techniques under Laser Risk Reduction Program (LRRP). The devices were characterized in the Detector Characterization Laboratory at NASA Langley Research Center. It appears that the performance of LPE- and MBE-grown phototransistors such as responsivity, noise-equivalent-power, and gain, are better than MOCVD-grown devices. Lidar tests have been conducted using LPE and MBE devices under the 2-micrometer CO2 Differential Absorption Lidar (DIAL) Instrument Incubator Program (IIP) at the National Center for Atmospheric Research (NCAR), Boulder, Colorado. The main focus of these tests was to examine the phototransistors performances as compared to commercial InGaAs avalanche photodiode by integrating them into the Raman-shifted Eye-safe Aerosol Lidar (REAL) operating at 1.543 micrometers. A simultaneous measurement of the atmospheric backscatter signals using the LPE phototransistors and the commercial APD demonstrated good agreement between these two devices. On the other hand, simultaneous detection of lidar backscatter signals using MBE-grown phototransistor and InGaAs APD, showed a general agreement between these two devices with a lower performance than LPE devices. These custom-built phototransistors were optimized for detection around 2-micrometer wavelength while the lidar tests were performed at 1.543 micrometers. Phototransistor operation at 2-micron will improve the performance of a lidar system operating at that wavelength. Measurements include detecting hard targets (Rocky Mountains), atmospheric structure consisting of cirrus clouds and boundary layer. These phototransistors may have potential for high sensitivity differential absorption lidar measurements of carbon dioxide and water vapor at 2.05-micrometers and 1.9-micrometers, respectively.

Soil moisture from ground-based networks and the North American Land Data Assimilation System Phase 2 Model: Are the right values somewhere in between?

NASA Astrophysics Data System (ADS)

Caldwell, T. G.; Scanlon, B. R.; Long, D.; Young, M.

2013-12-01

Soil moisture is the most enigmatic component of the water balance; nonetheless, it is inherently tied to every component of the hydrologic cycle, affecting the partitioning of both water and energy at the land surface. However, our ability to assess soil water storage capacity and status through measurement or modeling is challenged by error and scale. Soil moisture is as difficult to measure as it is to model, yet land surface models and remote sensing products require some means of validation. Here we compare the three major soil moisture monitoring networks across the US, including the USDA Soil Climate Assessment Network (SCAN), NOAA Climate Reference Network (USCRN), and Cosmic Ray Soil Moisture Observing System (COSMOS) to the soil moisture simulated using the North American Land Data Assimilation System (NLDAS) Phase 2. NLDAS runs in near real-time on a 0.125° (12 km) grid over the US, producing ensemble model outputs of surface fluxes and storage. We focus primarily on soil water storage (SWS) in the upper 0-0.1 m zone from the Noah Land Surface Model and secondarily on the effects of error propagation from atmospheric forcing and soil parameterization. No scaling of the observational data was attempted. We simply compared the extracted time series at the nearest grid center from NLDAS and assessed the results by standard model statistics including root mean square error (RMSE) and mean bias estimate (MBE) of the collocated ground station. Observed and modeled data were compared at both hourly and daily mean coordinated universal time steps. In all, ~300 stations were used for 2012. SCAN sites were found to be particularly troublesome at 5- and 10-cm depths. SWS at 163 SCAN sites departed significantly from Noah with a mean R2 of 0.38 × 0.0.23, a mean RMSE of 14.9 mm with a MBE of -13.5 mm. SWS at 111 USCRN sites has a mean R2 of 0.53 × 0.20, a mean RMSE of 8.2 mm with a MBE of -3.7 mm relative to Noah. Finally, 62 COSMOS sites, the instrument with the

Stacking InAs quantum dots over ErAs semimetal nanoparticles on GaAs (0 0 1) using molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Zhang, Yuanchang; Eyink, Kurt G.; Grazulis, Lawrence; Hill, Madelyn; Peoples, Joseph; Mahalingam, Krishnamurthy

2017-11-01

Hybrid nanostructures are known to elicit an enhanced optical response. We study the directed alignment of ErAs metal nanoparticle (NP) and InAs quantum dot (QD) using molecular beam eptaxy (MBE) in a GaAs matrix. Due to high surface free energy caused by the crystal structure difference, overgrowth of an ErAs NP with GaAs forms a depression that condenses subsequent InAs adatoms to form an inverted QD self-aligned to the underlying ErAs NP. The ErAs NP growth, GaAs overgrowth, and InAs QD deposition were carefully controlled and studied with transmission electron microscopy (TEM) and atomic force microscopy (AFM) to investigate their effects on the QD-NP alignment.

Image processing for grazing incidence fast atom diffraction

NASA Astrophysics Data System (ADS)

Debiossac, Maxime; Roncin, Philippe

2016-09-01

Grazing incidence fast atom diffraction (GIFAD, or FAD) has developed as a surface sensitive technique. Compared with thermal energies helium diffraction (TEAS or HAS), GIFAD is less sensitive to thermal decoherence but also more demanding in terms of surface coherence, the mean distance between defects. Such high quality surfaces can be obtained from freshly cleaved crystals or in a molecular beam epitaxy (MBE) chamber where a GIFAD setup has been installed allowing in situ operation. Based on recent publications by Atkinson et al. (2014) and Debiossac et al. (2014), the paper describes in detail the basic steps needed to measure the relative intensities of the diffraction spots. Care is taken to outline the underlying physical assumptions.

Study of structural properties of cubic InN films on GaAs(001) substrates by molecular beam epitaxy and migration enhanced epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Casallas-Moreno, Y. L.; Perez-Caro, M.; Gallardo-Hernandez, S.

InN epitaxial films with cubic phase were grown by rf-plasma-assisted molecular beam epitaxy (RF-MBE) on GaAs(001) substrates employing two methods: migration-enhanced epitaxy (MEE) and conventional MBE technique. The films were synthesized at different growth temperatures ranging from 490 to 550 Degree-Sign C, and different In beam fluxes (BEP{sub In}) ranging from 5.9 Multiplication-Sign 10{sup -7} to 9.7 Multiplication-Sign 10{sup -7} Torr. We found the optimum conditions for the nucleation of the cubic phase of the InN using a buffer composed of several thin layers, according to reflection high-energy electron diffraction (RHEED) patterns. Crystallographic analysis by high resolution X-ray diffraction (HR-XRD)more » and RHEED confirmed the growth of c-InN by the two methods. We achieved with the MEE method a higher crystal quality and higher cubic phase purity. The ratio of cubic to hexagonal components in InN films was estimated from the ratio of the integrated X-ray diffraction intensities of the cubic (002) and hexagonal (1011) planes measured by X-ray reciprocal space mapping (RSM). For MEE samples, the cubic phase of InN increases employing higher In beam fluxes and higher growth temperatures. We have obtained a cubic purity phase of 96.4% for a film grown at 510 Degree-Sign C by MEE.« less

Strain-induced phenomenon in complex oxide thin films

NASA Astrophysics Data System (ADS)

Haislmaier, Ryan

nonstoichiometry on ferroelectric properties are investigated, where enhanced ferroelectric responses are only found for stoichiometric films grown inside of the growth windows, whereas outside of the optimal growth window conditions, ferroelectric properties are greatly deteriorated and eventually disappear for highly nonstoichiometric film compositions. Utilizing these stoichiometric growth windows, high temperature polar phase transitions are discovered for compressively strained CaTiO3 films with transition temperatures in excess of 700 K, rendering this material as a strong candidate for high temperature electronic applications. Beyond the synthesis of single phase materials using hybrid MBE, a methodology is presented for constructing layered (SrTiO3)n/(CaTiO 3)n superlattice structures, where precise control over the unit cell layering thickness (n) is demonstrated using in-situ reflection high energy electron diffraction. The effects of interface roughness and layering periodicity (n) on the strain-induced ferroelectric properties for a series of n=1-10 (SrTiO3)n/(CaTiO3) n superlattice films are investigated. It is found that the stabilization of a ferroelectric phase is independent of n, but is however strongly dominated by the degree of interface roughness which is quantified by measuring the highest nth order X-ray diffraction peak splitting of each superlattice film. A counter-intuitive realization is made whereby a critical amount of interface roughness is required in order to enable the formation of the predicted strain-stabilized ferroelectric phase, whereas sharp interfaces actually suppress this ferroelectric phase from manifesting. It is shown how high-quality complex oxide superlattices can be constructed using hybrid MBE technique, allowing the ability to control layered materials at the atomic scale. Furthermore, a detailed growth methodology is provided for constructing a layered n=4 SrO(SrTiO3)n Ruddlesden-Popper (RP) phase by hybrid MBE, where the ability

Minority carrier diffusion and defects in InGaAsN grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Kurtz, Steven R.; Klem, J. F.; Allerman, A. A.; Sieg, R. M.; Seager, C. H.; Jones, E. D.

2002-02-01

To gain insight into the nitrogen-related defects of InGaAsN, nitrogen vibrational mode spectra, Hall mobilities, and minority carrier diffusion lengths are examined for InGaAsN (1.1 eV band gap) grown by molecular beam epitaxy (MBE). Annealing promotes the formation of In-N bonding, and lateral carrier transport is limited by large scale (≫mean free path) material inhomogeneities. Comparing solar cell quantum efficiencies with our earlier results for devices grown by metalorganic chemical vapor deposition (MOCVD), we find significant electron diffusion in the MBE material (reversed from the hole diffusion in MOCVD material), and minority carrier diffusion in InGaAsN cannot be explained by a "universal," nitrogen-related defect.

High kappa Dielectrics on InGaAs and GaN: Growth, Interfacial Structural Studies, and Surface Fermi Level Unpinning

DTIC Science & Technology

2010-12-24

nano-thick Al2O3, HfO2, and Ga2O3 (Gd2O3)/ InGaAs (and GaN) using high-resolution x-ray reflectivity using in-situ/ex-situ high-resolution synchrotron...aligned inversion-channel In0.75Ga0.25As MOSFETs using MBE- grown Al2O3/ Ga2O3 (Gd2O3) Chips integrating high κ’s/InGaAs and /Ge onto Si substrates have...using molecular beam epitaxy (MBE)-Al2O3/ Ga2O3 (Gd2O3) [GGO] and atomic layer deposited (ALD)-Al2O3, with gate lengths (LG) of 1 μm and 0.4 μm

Enhanced Arctic Amplification Began at the Mid-Brunhes Event ~400,000 years ago.

PubMed

Cronin, T M; Dwyer, G S; Caverly, E K; Farmer, J; DeNinno, L H; Rodriguez-Lazaro, J; Gemery, L

2017-11-03

Arctic Ocean temperatures influence ecosystems, sea ice, species diversity, biogeochemical cycling, seafloor methane stability, deep-sea circulation, and CO 2 cycling. Today's Arctic Ocean and surrounding regions are undergoing climatic changes often attributed to "Arctic amplification" - that is, amplified warming in Arctic regions due to sea-ice loss and other processes, relative to global mean temperature. However, the long-term evolution of Arctic amplification is poorly constrained due to lack of continuous sediment proxy records of Arctic Ocean temperature, sea ice cover and circulation. Here we present reconstructions of Arctic Ocean intermediate depth water (AIW) temperatures and sea-ice cover spanning the last ~ 1.5 million years (Ma) of orbitally-paced glacial/interglacial cycles (GIC). Using Mg/Ca paleothermometry of the ostracode Krithe and sea-ice planktic and benthic indicator species, we suggest that the Mid-Brunhes Event (MBE), a major climate transition ~ 400-350 ka, involved fundamental changes in AIW temperature and sea-ice variability. Enhanced Arctic amplification at the MBE suggests a major climate threshold was reached at ~ 400 ka involving Atlantic Meridional Overturning Circulation (AMOC), inflowing warm Atlantic Layer water, ice sheet, sea-ice and ice-shelf feedbacks, and sensitivity to higher post-MBE interglacial CO 2 concentrations.

Enhanced Arctic amplification began at the Mid-Brunhes Event 430,000 years ago

USGS Publications Warehouse

Cronin, Thomas M.; Dwyer, Gary S.; Caverly, Emma; Farmer, Jesse; DeNinno, Lauren H.; Rodriguez-Lazaro, Julio; Gemery, Laura

2017-01-01

Arctic Ocean temperatures influence ecosystems, sea ice, species diversity, biogeochemical cycling, seafloor methane stability, deep-sea circulation, and CO2 cycling. Today's Arctic Ocean and surrounding regions are undergoing climatic changes often attributed to "Arctic amplification" - that is, amplified warming in Arctic regions due to sea-ice loss and other processes, relative to global mean temperature. However, the long-term evolution of Arctic amplification is poorly constrained due to lack of continuous sediment proxy records of Arctic Ocean temperature, sea ice cover and circulation. Here we present reconstructions of Arctic Ocean intermediate depth water (AIW) temperatures and sea-ice cover spanning the last ~ 1.5 million years (Ma) of orbitally-paced glacial/interglacial cycles (GIC). Using Mg/Ca paleothermometry of the ostracode Krithe and sea-ice planktic and benthic indicator species, we suggest that the Mid-Brunhes Event (MBE), a major climate transition ~ 400-350 ka, involved fundamental changes in AIW temperature and sea-ice variability. Enhanced Arctic amplification at the MBE suggests a major climate threshold was reached at ~ 400 ka involving Atlantic Meridional Overturning Circulation (AMOC), inflowing warm Atlantic Layer water, ice sheet, sea-ice and ice-shelf feedbacks, and sensitivity to higher post-MBE interglacial CO2 concentrations.

Epitaxial CuInSe2 thin films grown by molecular beam epitaxy and migration enhanced epitaxy

NASA Astrophysics Data System (ADS)

Abderrafi, K.; Ribeiro-Andrade, R.; Nicoara, N.; Cerqueira, M. F.; Gonzalez Debs, M.; Limborço, H.; Salomé, P. M. P.; Gonzalez, J. C.; Briones, F.; Garcia, J. M.; Sadewasser, S.

2017-10-01

While CuInSe2 chalcopyrite materials are mainly used in their polycrystalline form to prepare thin film solar cells, epitaxial layers have been used for the characterization of defects. Typically, epitaxial layers are grown by metal-organic vapor phase epitaxy or molecular beam epitaxy (MBE). Here we present epitaxial layers grown by migration enhanced epitaxy (MEE) and compare the materials quality to MBE grown layers. CuInSe2 layers were grown on GaAs (0 0 1) substrates by co-evaporation of Cu, In, and Se using substrate temperatures of 450 °C, 530 °C, and 620 °C. The layers were characterized by high resolution X-ray diffraction (HR-XRD), high-resolution transmission electron microscopy (HRTEM), Raman spectroscopy, and atomic force microscopy (AFM). HR-XRD and HR-TEM show a better crystalline quality of the MEE grown layers, and Raman scattering measurements confirm single phase CuInSe2. AFM shows the previously observed faceting of the (0 0 1) surface into {1 1 2} facets with trenches formed along the [1 1 0] direction. The surface of MEE-grown samples appears smoother compared to MBE-grown samples, a similar trend is observed with increasing growth temperature.

Molecular-beam heteroepitaxial growth and characterization of wide-band-gap semiconductor films and devices

NASA Astrophysics Data System (ADS)

Piquette, Eric Charles

The thesis consists of two parts. Part I describes work on the molecular beam epitaxial (MBE) growth of GaN, AlN, and AlxGa 1-xN alloys, as well as efforts in the initial technical development and demonstration of nitride-based high power electronic devices. The major issues pertaining to MBE growth are discussed, including special requirements of the growth system, substrates, film nucleation, n - and p-type doping, and the dependence of film quality on growth parameters. The GaN films were characterized by a variety of methods, including high resolution x-ray diffraction, photoluminescence, and Hall effect measurement. It is found that the film polarity and extended defect density as well as quality of photoluminescence and electrical transport properties depend crucially on how the nitride layer is nucleated on the substrate and how the subsequent film surface morphology evolves, which can be controlled by the growth conditions. A technique is proposed and demonstrated that utilizes the control of morphology evolution to reduce defect density and improve the structural quality of MBE GaN films. In addition to growth, the design and processing of high voltage GaN Schottky diodes is presented, as well as an experimental study of sputter-deposited ohmic and rectifying metal contacts to GaN. Simple models for high power devices, based on materials properties such as minority carrier diffusion length and critical electric breakdown field, are used to estimate the voltage standoff capability, current carrying capacity, and maximum operating frequency of unipolar and bipolar GaN power devices. The materials and transport properties of GaN pertinent to high power device design were measured experimentally. High voltage Schottky rectifiers were fabricated which verify the impressive electric breakdown field of GaN (2--5 MV/cm). Electron beam induced current (EBIC) experiments were also conducted to measure the minority carrier diffusion length for both electrons and

Screening effect of graphite and bilayer graphene on excitons in MoSe2 monolayer

NASA Astrophysics Data System (ADS)

Wang, Yuan; Zhang, Shuai; Huang, Di; Cheng, Jingxin; Li, Yingguo; Wu, Shiwei

2017-03-01

Excitons in transition metal dichalcogenide monolayer have recently attracted great interest due to their extremely large binding energy, causing giant bandgap renormalization. In this work, we examined the screening effect of graphite and bilayer graphene on the excitons in molybdenum diselenide (MoSe2) monolayer grown by molecular beam epitaxy (MBE). Through the combinational study of scanning tunneling spectroscopy (STS) and photoluminescence (PL) measurements, we determined the binding energy of ~0.58 eV for MoSe2 monolayer on both substrates at 16 K, and no obvious difference between them. Our result is consistent with a previous report [Zhang et al 2015 Nano Letters 15, 6494], but is contradictory to another one [Ugeda 2014 Nature Materials 13, 1091]. Physical picture for no noticeable difference on screening effect between bilayer graphene and graphite substrate is discussed. Possible reasons for causing the discrepancy are also mentioned.

Elemental boron-doped p(+)-SiGe layers grown by molecular beam epitaxy for infrared detector applications

NASA Technical Reports Server (NTRS)

Lin, T. L.; George, T.; Jones, E. W.; Ksendzov, A.; Huberman, M. L.

1992-01-01

SiGe/Si heterojunction internal photoemission (HIP) detectors have been fabricated utilizing molecular beam epitaxy of p(+)-SiGe layers on p(-)-Si substrates. Elemental boron from a high-temperature effusion cell was used as the dopant source during MBE growth, and high doping concentrations have been achieved. Strong infrared absorption, mainly by free-carrier absorption, was observed for the degenerately doped SiGe layers. The use of elemental boron as the dopant source allows a low MBE growth temperature, resulting in improved crystalline quality and smooth surface morphology of the Si(0.7)Ge(0.3) layers. Nearly ideal thermionic emission dark current characteristics have been obtained. Photoresponse of the HIP detectors in the long-wavelength infrared regime has been demonstrated.

High-efficiency GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy

PubMed Central

2011-01-01

We report the initial results of GaAs and GaInP solar cells grown by all solid-state molecular-beam-epitaxy (MBE) technique. For GaAs single-junction solar cell, with the application of AlInP as the window layer and GaInP as the back surface field layer, the photovoltaic conversion efficiency of 26% at one sun concentration and air mass 1.5 global (AM1.5G) is realized. The efficiency of 16.4% is also reached for GaInP solar cell. Our results demonstrate that the MBE-grown phosphide-contained III-V compound semiconductor solar cell can be quite comparable to the metal-organic-chemical-vapor-deposition-grown high-efficiency solar cell. PMID:22040124

Molecular-Beam Epitaxial Growth of a Far-Infrared Transparent Electrode for Extrinsic Germanium Photoconductors

NASA Astrophysics Data System (ADS)

Suzuki, Toyoaki; Wada, Takehiko; Hirose, Kazuyuki; Makitsubo, Hironobu; Kaneda, Hidehiro

2012-08-01

We have evaluated the optical and electrical properties of a far-infrared (IR) transparent electrode for extrinsic germanium (Ge) photoconductors at 4 K, which was fabricated by molecular beam epitaxy (MBE). As a far-IR transparent electrode, an aluminum (Al)-doped Ge layer is formed at well-optimized doping concentration and layer thickness in terms of the three requirements: high far-IR transmittance, low-resistivity, and excellent ohmic contact. The Al-doped Ge layer has the far-IR transmittance of >95% within the wavelength range of 40-200 μm, while low-resistivity ( ˜5 Ω cm) and ohmic contact are ensured at 4 K. We demonstrate the applicability of the MBE technology in fabricating the far-IR transparent electrode satisfying the above requirements.

Transferring-free and large-area graphitic carbon film growth by using molecular beam epitaxy at low growth temperature

NASA Astrophysics Data System (ADS)

Lin, Meng-Yu; Wang, Cheng-Hung; Pao, Chun-Wei; Lin, Shih-Yen

2015-09-01

Graphitic carbon films prepared by using molecular beam epitaxy (MBE) on metal templates with different thicknesses deposited on SiO2/Si substrates are investigated in this paper. With thick Cu templates, only graphitic carbon flakes are obtained near the Cu grain boundaries at low growth temperatures on metal/SiO2 interfaces. By replacing the Cu templates with thin Ni templates, complete graphitic carbon films with superior crystalline quality is obtained at 600 °C on SiO2/Si substrates after removing the Ni templates. The enhanced attachment of the graphitic carbon film to the SiO2/Si substrates with reduced Ni thickness makes the approach a promising approach for transferring-free graphene preparation at low temperature by using MBE.

X-ray photoelectron spectroscopic study of the oxide removal mechanism of GaAs /100/ molecular beam epitaxial substrates in in situ heating

NASA Technical Reports Server (NTRS)

Vasquez, R. P.; Lewis, B. F.; Grunthaner, F. J.

1983-01-01

A standard cleaning procedure for GaAs (100) molecular beam epitaxial (MBE) substrates is a chemical treatment with a solution of H2SO4/H2O2/H2O, followed by in situ heating prior to MBE growth. X-ray photoelectron spectroscopic (XPS) studies of the surface following the chemical treatment show that the oxidized As is primarily As(+ 5). Upon heating to low temperatures (less than (350 C) the As(+ 5) oxidizes the substrate to form Ga2O3 and elemental As, and the As(+ 5) is reduced to As(+ 3) in the process. At higher temperatures (500 C), the As(+ 3) and elemental As desorb, while the Ga(+ 3) begins desorbing at about 600 C.

Study of magnetism in Cr doped (Bi1-xSbx)2Te3

NASA Astrophysics Data System (ADS)

Richardella, Anthony; Kandala, Abhinav; Kempinger, Susan; Samarth, Nitin; Grutter, Alex; Borchers, Julie

2015-03-01

The quantum anomalous Hall (QAH) effect was first observed in Cr doped films of the topological insulator (TI) (Bi1-xSbx)2Te3. This ferromagnetic TI opens a gap at the Dirac point and, when the Fermi energy lies inside this gap, a quantized QAH conductance can be observed. The origin of ferromagnetism in this material is still not well understood with the mechanism typically attributed to either a high van-Vleck susceptibility or a carrier mediated RKKY like interaction. To elucidate this we have studied Cry(Bi1-xSbx)2-yTe3 thin films grown by MBE on SrTiO3 (STO) substrates using polarized neutron reflectivity (PNR) while in-situ backgating the film to change the position of the Fermi energy. The films are also characterized by XRD, AFM, TEM and low temperature transport measurements. PNR measurements provide a direct measure of the depth dependent magnetization of a sample. We use this to study how the magnetization changes as the Fermi energy is moved towards the Dirac point. Funded by DARPA and ARO-MURI.

Pressure and PL study of dilute-N GaInNAs films for applications in photovoltaics

NASA Astrophysics Data System (ADS)

Lindberg, George; Fukuda, Miwa; Al Khalfioui, M.; Hossain, Khalid; Sellers, Ian; Weinstein, Bernard

2013-03-01

Multi-junction photovoltaic devices employing dilute-N GaInNAs alloys are currently of high interest for efficient solar energy conversion. The negative band-bowing produced by introducing a few percent N into GaInAs provides a convenient way to match the 1eV component of the solar spectrum, providing recombination losses in localized states can be reduced while maintaining favorable carrier extraction. High pressure photoluminescence (PL) experiments exploring the localization of band-edge excitons in dilute-N GaInNAs films grown by plasma assisted MBE will be discussed. The effects of post-growth annealing and hydrogen incorporation on the PL spectra of the films are considered. Research supported by Amethyst Research Inc. through the State of Oklahoma, ONAP program.

Transient atomic behavior and surface kinetics of GaN

NASA Astrophysics Data System (ADS)

Moseley, Michael; Billingsley, Daniel; Henderson, Walter; Trybus, Elaissa; Doolittle, W. Alan

2009-07-01

An in-depth model for the transient behavior of metal atoms adsorbed on the surface of GaN is developed. This model is developed by qualitatively analyzing transient reflection high energy electron diffraction (RHEED) signals, which were recorded for a variety of growth conditions of GaN grown by molecular-beam epitaxy (MBE) using metal-modulated epitaxy (MME). Details such as the initial desorption of a nitrogen adlayer and the formation of the Ga monolayer, bilayer, and droplets are monitored using RHEED and related to Ga flux and shutter cycles. The suggested model increases the understanding of the surface kinetics of GaN, provides an indirect method of monitoring the kinetic evolution of these surfaces, and introduces a novel method of in situ growth rate determination.

MBE System for Antimonide Based Semiconductor Lasers

DTIC Science & Technology

1999-01-31

selectivity are reported as a function of plasma chemistry and DC self-bias. Experiment The samples used in this study are undoped bulk GaSb, InSb...Phys. Lett. 64(13), 1673-1675 (1994). 8. J. W. Lee, J. Hong, E. S. Lambers, C. R. Abernathy, S. J. Pearton, W. S. Hobson, and F. Ren, Plasma Chemistry and...AlGaAsSb are reported as functions of plasma chemistry , ICP power, RF self-bias, and chamber pressure. It is found that physical sputtering desorption of

77 FR 68734 - Meeting of the National Advisory Council on Minority Business Enterprise

Federal Register 2010, 2011, 2012, 2013, 2014

2012-11-16

... recommendations from the private sector on a broad range of policy issues that affect minority businesses and... include: (1) Definition of Minority Business Enterprises (MBEs) and MBDA's role, (2) Creation of an MBE...

Investigation of the silicon ion density during molecular beam epitaxy growth

NASA Astrophysics Data System (ADS)

Eifler, G.; Kasper, E.; Ashurov, Kh.; Morozov, S.

2002-05-01

Ions impinging on a surface during molecular beam epitaxy influence the growth and the properties of the growing layer, for example, suppression of dopant segregation and the generation of crystal defects. The silicon electron gun in the molecular beam epitaxy (MBE) equipment is used as a source for silicon ions. To use the effect of ion bombardment the mechanism of generation and distribution of ions was investigated. A monitoring system was developed and attached at the substrate position in the MBE growth chamber to measure the ion and electron densities towards the substrate. A negative voltage was applied to the substrate to modify the ion energy and density. Furthermore the current caused by charge carriers impinging on the substrate was measured and compared with the results of the monitoring system. The electron and ion densities were measured by varying the emission current of the e-gun achieving silicon growth rates between 0.07 and 0.45 nm/s and by changing the voltage applied to the substrate between 0 to -1000 V. The dependencies of ion and electron densities were shown and discussed within the framework of a simple model. The charged carrier densities measured with the monitoring system enable to separate the ion part of the substrate current and show its correlation to the generation rate. Comparing the ion density on the whole substrate and in the center gives a hint to the ion beam focusing effect. The maximum ion and electron current densities obtained were 0.40 and 0.61 μA/cm2, respectively.

Intersubband transitions and many body effects in ZnMgO/ZnO quantum wells

NASA Astrophysics Data System (ADS)

Hierro, Adrian; Montes Bajo, Miguel; Tamayo-Arriola, Julen; Hugues, Maxime; Ulloa, J. M.; Le Biavan, N.; Peretti, Romain; Julien, François; Faist, Jerome; Chauveau, Jean-Michel

2018-02-01

In this work we show the potential of the ZnO/ZnMgO material system for intersubband (ISB)-based devices. This family of alloys presents a unique set of properties that makes it highly attractive for THz emission as well as strong coupling regimes: it has a very large longitudinal optical phonon energy of 72 meV, it can be doped up to 1021 cm-3, it is very ionic with a large difference between the static and high frequency dielectric constants, and it can be grown homoepitaxially on native substrates with low defect densities. The films analyzed here are grown by molecular beam epitaxy (MBE) on a non-polar orientation, the m-plane, with varying QW thicknesses and 30% Mg concentrations in the barrier, and are examined with polarization-dependent IR absorption spectroscopy. The QW band structure and the intersubband transitions energies are modeled considering many body effects, which are key to predict correctly the measured values.

Surface roughness estimation of MBE grown CdTe/GaAs(211)B by ex-situ spectroscopic ellipsometry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Karakaya, Merve, E-mail: mervegunnar@iyte.edu.tr; Bilgilisoy, Elif; Arı, Ozan

Spectroscopic ellipsometry (SE) ranging from 1.24 eV to 5.05 eV is used to obtain the film thickness and optical properties of high index (211) CdTe films. A three-layer optical model (oxide/CdTe/GaAs) was chosen for the ex-situ ellipsometric data analysis. Surface roughness cannot be determined by the optical model if oxide is included. We show that roughness can be accurately estimated, without any optical model, by utilizing the correlation between SE data (namely the imaginary part of the dielectric function, or phase angle, ψ) and atomic force microscopy (AFM) roughness. and ψ values at 3.31 eV, which corresponds to E{sub 1}more » critical transition energy of CdTe band structure, are chosen for the correlation since E{sub 1} gives higher resolution than the other critical transition energies. On the other hand, due to the anisotropic characteristic of (211) oriented CdTe surfaces, SE data ( and ψ) shows varieties for different azimuthal angle measurements. For this reason, in order to estimate the surface roughness by considering these correlations, it is shown that SE measurements need to be taken at the same surface azimuthal angle. Estimating surface roughness in this manner is an accurate way to eliminate cumbersome surface roughness measurement by AFM.« less

High-mobility BaSnO 3 grown by oxide molecular beam epitaxy

DOE PAGES

Raghavan, Santosh; Schumann, Timo; Kim, Honggyu; ...

2016-01-28

High-mobility perovskite BaSnO 3 films are of significant interest as newwide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO 3 films have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy (MBE) approach, which supplies pre-oxidized SnO x. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO 3. We demonstrate room temperature electron mobilities of 150 cm 2 V -1 s -1 in films grownmore » on PrScO 3. Lastly, the results open up a wide range of opportunities for future electronic devices.« less

Stacking of ZnSe/ZnCdSe Multi-Quantum Wells on GaAs (100) by Epitaxial Lift-Off

NASA Astrophysics Data System (ADS)

Eldose, N. M.; Zhu, J.; Mavridi, N.; Prior, Kevin; Moug, R. T.

2018-05-01

Here we present stacking of GaAs/ZnSe/ZnCdSe single-quantum well (QW) structures using epitaxial lift-off (ELO). Molecular beam epitaxy (MBE)-grown II-VI QW structure was lifted using our standard ELO technique. The QW structures were transferred onto glass plates and then subsequent layers stacked on top of each other to form a triple-QW structure. This was compared to an MBE-grown multiple-QW (MQW) structure of similar design. Low-temperature (77 K) photoluminescence (PL) spectroscopy was used to compare the two structures and showed no obvious degradation of the ELO stacked layer. It was observed that by stacking the single QW layer on itself we could increase the PL emission intensity beyond that of the grown MQW structure while maintaining narrow line width.

JSEP fellowship

NASA Astrophysics Data System (ADS)

Goodman, Alvin M.; Powers, Edward J.

1993-06-01

In this dissertation, the precision of molecular-beam epitaxy (MBE) is taken advantage of in order to grow semiconductor reflectors, microcavities, and quantum wells for studies of vertical-cavity surface-emitting lasers (VCSEL's) and the coupling between reflectors and the spatially localized dipoles of semiconductor quantum wells. The design of the structures and the choice of epitaxial growth parameters used for the structures are discussed in detail. Experimental techniques and results are discussed which relate to studies that advance the optoelectronics technology and our understanding of fundamental physics. MBE is used to grow epitaxial structures in which a QW is precisely placed either in close proximity to a DBR, or near the surface of the epitaxial layer, so that a highly reflective mirror can be placed in close proximity to the QW.

Kinematical calculations of RHEED intensity oscillations during the growth of thin epitaxial films

NASA Astrophysics Data System (ADS)

Daniluk, Andrzej

2005-08-01

A practical computing algorithm working in real time has been developed for calculating the reflection high-energy electron diffraction (RHEED) from the molecular beam epitaxy (MBE) growing surface. The calculations are based on the use of kinematical diffraction theory. Simple mathematical models are used for the growth simulation in order to investigate the fundamental behaviors of reflectivity change during the growth of thin epitaxial films prepared using MBE. Program summaryTitle of program:GROWTH Catalogue identifier:ADVL Program summary URL:http://cpc.cs.qub.ac.uk/summaries/ADVL Program obtainable from: CPC Program Library, Queen's University of Belfast, N. Ireland Distribution format: tar.gz Computer for which the program is designed and others on which is has been tested:Pentium-based PC Operating systems or monitors under which the program has been tested:Windows 9x, XP, NT Programming language used:Object Pascal Memory required to execute with typical data:more than 1 MB Number of bits in a word: 64 bits Number of processors used: 1 Number of lines in distributed program, including test data, etc.: 10 989 Number of bytes in distributed program, including test data, etc.:103 048 Nature of the physical problem:Reflection high-energy electron diffraction (RHEED) is a very useful technique for studying growth and surface analysis of thin epitaxial structures prepared using the molecular beam epitaxy (MBE). The simplest approach to calculating the RHEED intensity during the growth of thin epitaxial films is the kinematical diffraction theory (often called kinematical approximation), in which only a single scattering event is taken into account. The biggest advantage of this approach is that we can calculate RHEED intensity in real time. Also, the approach facilitates intuitive understanding of the growth mechanism and surface morphology [P.I. Cohen, G.S. Petrich, P.R. Pukite, G.J. Whaley, A.S. Arrott, Surf. Sci. 216 (1989) 222]. Method of solution

Researching the electrical properties of single A3B5 nanowires

NASA Astrophysics Data System (ADS)

Vasiliev, A. A.; Mozharov, A. M.; Komissarenko, F. E.; Cirlin, G. E.; Bouravlev, D. A.; Mukhin, I. S.

2017-11-01

We investigate electrical characteristics of GaN, GaAs and GaP NWs which are grown with MOCVD and MBE. We developed measurement technique and it allows to determine the required properties of the structures.

Deep-UV emission at 219 nm from ultrathin MBE GaN/AlN quantum heterostructures

NASA Astrophysics Data System (ADS)

Islam, S. M.; Protasenko, Vladimir; Lee, Kevin; Rouvimov, Sergei; Verma, Jai; Xing, Huili Grace; Jena, Debdeep

2017-08-01

Deep ultraviolet (UV) optical emission below 250 nm (˜5 eV) in semiconductors is traditionally obtained from high aluminum containing AlGaN alloy quantum wells. It is shown here that high-quality epitaxial ultrathin binary GaN quantum disks embedded in an AlN matrix can produce efficient optical emission in the 219-235 nm (˜5.7-5.3 eV) spectral range, far above the bulk bandgap (3.4 eV) of GaN. The quantum confinement energy in these heterostructures is larger than the bandgaps of traditional semiconductors, made possible by the large band offsets. These molecular beam epitaxy-grown extreme quantum-confinement GaN/AlN heterostructures exhibit an internal quantum efficiency of 40% at wavelengths as short as 219 nm. These observations together with the ability to engineer the interband optical matrix elements to control the direction of photon emission in such binary quantum disk active regions offer unique advantages over alloy AlGaN quantum well counterparts for the realization of deep-UV light-emitting diodes and lasers.

Heavily Sn-doped GaAs with abrupt doping profiles grown by migration-enhanced epitaxy at low temperatures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chavanapranee, Tosaporn; Horikoshi, Yoshiji

The characteristics of heavily Sn-doped GaAs samples grown at 300 deg. C by a migration-enhanced epitaxy (MEE) technique are investigated in comparison with those of the samples grown by a conventional molecular-beam epitaxy (MBE) at 580 deg. C. While no discernible difference is observed in the low doping regime, the difference in doping characteristics between the MBE- and MEE-grown samples becomes apparent when the doping concentration exceeds 1x10{sup 19} cm{sup -3}. Sn atoms as high as 4x10{sup 21} cm{sup -3} can be incorporated into MEE-grown GaAs films, unlike the MBE-grown samples that have a maximum doping level limited around 1x10{supmore » 19} cm{sup -3}. Due to an effective suppression of Sn segregation in the MEE growth case, high quality GaAs films with abrupt high-concentration Sn-doping profiles are achieved with the doping concentrations of up to 2x10{sup 21} cm{sup -3}. It has been shown that even though a high concentration of Sn atoms is incorporated into the GaAs film, the electron concentration saturates at 6x10{sup 19} cm{sup -3} and then gradually decreases with Sn concentration. The uniform doping limitation, as well as the electron concentration saturation, is discussed by means of Hall-effect measurement, x-ray diffraction, and Raman scattering spectroscopy.« less

A comprehensive assessment of different evapotranspiration products using the site-level FLUXNET database

NASA Astrophysics Data System (ADS)

Liu, J.

2017-12-01

Accurately estimate of ET is crucial for studies of land-atmosphere interactions. A series of ET products have been developed recently relying on various simulation methods, however, uncertainties in accuracy of products limit their implications. In this study, accuracies of total 8 popular global ET products simulated based on satellite retrieves (ETMODIS and ETZhang), reanalysis (ETJRA55), machine learning method (ETJung) and land surface models (ETCLM, ETMOS, ETNoah and ETVIC) forcing by Global Land Data Assimilation System (GLDAS), respectively, were comprehensively evaluated against observations from eddy covariance FLUXNET sites by yearly, land cover and climate zones. The result shows that all simulated ET products tend to underestimate in the lower ET ranges or overestimate in higher ET ranges compared with ET observations. Through the examining of four statistic criterias, the root mean square error (RMSE), mean bias error (MBE), R2, and Taylor skill score (TSS), ETJung provided a high performance whether yearly or land cover or climatic zones. Satellite based ET products also have impressive performance. ETMODIS and ETZhang present comparable accuracy, while were skilled for different land cover and climate zones, respectively. Generally, the ET products from GLDAS show reasonable accuracy, despite ETCLM has relative higher RMSE and MBE for yearly, land cover and climate zones comparisons. Although the ETJRA55 shows comparable R2 with other products, its performance was constraint by the high RMSE and MBE. Knowledge from this study is crucial for ET products improvement and selection when they were used.

Characterization of aging-induced microstructural changes in M250 maraging steel using magnetic parameters

NASA Astrophysics Data System (ADS)

Rajkumar, K. V.; Vaidyanathan, S.; Kumar, Anish; Jayakumar, T.; Raj, Baldev; Ray, K. K.

2007-05-01

The best combinations of mechanical properties (yield stress and fracture toughness) of M250 maraging steel is obtained through short-term thermal aging (3-10 h) at 755 K. This is attributed to the microstructure containing precipitation of intermetallic phases in austenite-free low-carbon martensite matrix. Over-aged microstructure, containing reverted austenite degrades the mechanical properties drastically. Hence, it necessitates identification of a suitable non-destructive evaluation (NDE) technique for detecting any reverted austenite unambiguously during aging. The influence of aging on microstructure, room temperature hardness and non-destructive magnetic parameters such as coercivity ( Hc), saturation magnetization ( Ms) and magnetic Barkhausen emission (MBE) RMS peak voltage is studied in order to derive correlations between these parameters in aged M250 maraging steel. Hardness was found to increase with precipitation of intermetallics during initial aging and decrease at longer durations due to austenite reversion. Among the different magnetic parameters studied, MBE RMS peak voltage was found to be very sensitive to austenite reversion (non-magnetic phase) as they decreased drastically up on initiation of austenite reversion. Hence, this parameter can be effectively utilized to detect and quantify the reverted austenite in maraging steel specimen. The present study clearly indicates that the combination of MBE RMS peak voltage and hardness can be used for unambiguous characterization of microstructural features of technological and practical importance (3-10 h of aging duration at 755 K) in M250 grade maraging steel.

Minority business bidding for local government contracts: the complexity of availability.

PubMed

Bangs, Ralph L; Murrell, Audrey; Constance-Huggins, Monique

2007-01-01

While minority-business enterprises (MBEs) have gained some access to local government contracts during the last three decades, these firms continue to receive a small share of local government contract spending relative to the number of available firms. Researchers have suggested two general explanations for the low representation of MBEs in contract awards: (1) lack of qualifications and capacity among MBEs, and (2) public and private discrimination against MBEs in contracting processes. This study on prime contract opportunities in a Northern central city and county with a large minority population finds that low bid rates greatly contribute to the low MBE shares of prime contracts and that bidding is reduced by both local government processes and characteristics of the firms. Some implications of these findings are that local governments need to: (1) monitor MBE shares of prime contract bids by size of contract and use share of bids as one measure of program and organizational effectiveness; (2) identify MBEs that are qualified for prime contracts and encourage and help interested firms to submit competitive bids; and (3) ensure that local government policies and practices do not diminish access to information about prime contract opportunities for qualified and interested minority firms. Another implication is that bidders lists should not be a primary basis for determining MBE availability, since many qualified and interested MBEs do not bid because of perceived barriers in local government.

EPA Form 5700‑52A: United States Environmental Protection Agency Minority Business Enterprise/Woman Business Enterprise Utilization under Federal Grants and Cooperative Agreements

EPA Pesticide Factsheets

MBE/WBE utilization is based on 40 CFR Part 33. EPA Form 5700-52A must be completed by recipients of Federal grants, cooperative agreements, or other Federal financial assistance which involve procurement of supplies, equipment, construction, etc.

Minority Business Enterprises and Woman Business Enterprises Grant Utilization

EPA Pesticide Factsheets

The policy goal of the MBE/WBE Programs is to assure that minority business enterprises and woman business enterprises are given the opportunity to participate in contract and procurement for supplies, construction, equipment & services under any EPA grant

Royal honour.

PubMed

2001-03-07

RCN adviser in nursing practice Susan Scott visited Buckingham Palace last week to receive her MBE from the Queen. Ms Scott, who received the honour for services to nursing and the RCN, is pictured with her granddaughter Mollie.

Temporal behavior of RHEED intensity oscillations during molecular beam epitaxial growth of GaAs and AlGaAs on (111)B GaAs substrates

NASA Astrophysics Data System (ADS)

Yen, Ming Y.; Haas, T. W.

1990-10-01

We present the temporal behavior of intensity oscillations in reflection high-energy electron diffraction (RHEED) during molecular beam epitaxial (MBE) growth of GaAs and A1GaAs on (1 1 1)B GaAs substrates. The RHEED intensity oscillations were examined as a function of growth parameters in order to provide the insight into the dynamic characteristics and to identify the optimal condition for the two-dimensional layer-by-layer growth. The most intense RHEED oscillation was found to occur within a very narrow temperature range which seems to optimize the surface migration kinetics of the arriving group III elements and the molecular dissodiative reaction of the group V elements. The appearance of an initial transient of the intensity upon commencement of the growth and its implications are described.

Band gap tuning and optical absorption in type-II InAs/GaSb mid infrared short period superlattices: 14 bands K Dot-Operator p study

DOE Office of Scientific and Technical Information (OSTI.GOV)

AbuEl-Rub, Khaled M.

2012-09-06

The MBE growth of short-period InAs/GaSb type-II superlattice structures, varied around 20.5 A InAs/24 A GaSb were [J. Applied physics, 96, 2580 (2004)] carried out by Haugan et al. These SLs were designed to produce devices with an optimum mid-infrared photoresponse and a sharpest photoresponse cutoff. We have used a realistic and reliable 14-band k.p formalism description of the superlattice electronic band structure to calculate the absorption coefficient in such short-period InAs/GaSb type-II superlattices. The parameters for this formalism are known from fitting to independent experiments for the bulk materials. The band-gap energies are obtained without any fitting parameters, andmore » are in good agreement with experimental data.« less

Magnetic Field Enhanced Superconductivity in Epitaxial Thin Film WTe2.

PubMed

Asaba, Tomoya; Wang, Yongjie; Li, Gang; Xiang, Ziji; Tinsman, Colin; Chen, Lu; Zhou, Shangnan; Zhao, Songrui; Laleyan, David; Li, Yi; Mi, Zetian; Li, Lu

2018-04-25

In conventional superconductors an external magnetic field generally suppresses superconductivity. This results from a simple thermodynamic competition of the superconducting and magnetic free energies. In this study, we report the unconventional features in the superconducting epitaxial thin film tungsten telluride (WTe 2 ). Measuring the electrical transport properties of Molecular Beam Epitaxy (MBE) grown WTe 2 thin films with a high precision rotation stage, we map the upper critical field H c2 at different temperatures T. We observe the superconducting transition temperature T c is enhanced by in-plane magnetic fields. The upper critical field H c2 is observed to establish an unconventional non-monotonic dependence on temperature. We suggest that this unconventional feature is due to the lifting of inversion symmetry, which leads to the enhancement of H c2 in Ising superconductors.

Exciton emission of quasi-2D InGaN in GaN matrix grown by molecular beam epitaxy

PubMed Central

Ma, Dingyu; Rong, Xin; Zheng, Xiantong; Wang, Weiying; Wang, Ping; Schulz, Tobias; Albrecht, Martin; Metzner, Sebastian; Müller, Mathias; August, Olga; Bertram, Frank; Christen, Jürgen; Jin, Peng; Li, Mo; Zhang, Jian; Yang, Xuelin; Xu, Fujun; Qin, Zhixin; Ge, Weikun; Shen, Bo; Wang, Xinqiang

2017-01-01

We investigate the emission from confined excitons in the structure of a single-monolayer-thick quasi-two-dimensional (quasi-2D) InxGa1−xN layer inserted in GaN matrix. This quasi-2D InGaN layer was successfully achieved by molecular beam epitaxy (MBE), and an excellent in-plane uniformity in this layer was confirmed by cathodoluminescence mapping study. The carrier dynamics have also been investigated by time-resolved and excitation-power-dependent photoluminescence, proving that the recombination occurs via confined excitons within the ultrathin quasi-2D InGaN layer even at high temperature up to ~220 K due to the enhanced exciton binding energy. This work indicates that such structure affords an interesting opportunity for developing high-performance photonic devices. PMID:28417975

Orientation and temperature dependent adsorption of H 2S on GaAs: Valence band photoemission

NASA Astrophysics Data System (ADS)

Ranke, W.; Kuhr, H. J.; Finster, J.

A cylindrically shaped GaAs single crystal was used to study the adsorption of H 2S on the six inequivalent orientations (001), (113), (111), (110), (111) and (113) by angle resolved valence band photoelectron spectroscopy and surface dipole measurements. Adsorption at 150 K on the surface prepared by molecular beam epitaxy (MBE) yields similar adsorbate induced emission on all orientations which were ascribed to SH radicals. On (110), where preferential adsorption occurs additional features from molecular H 2S are observed. The adsorbate spectra at 720 K are ascribed to atomic sulphur. On the surface prepared by ion bombardment and annealing, defect enhanced adsorption occurs in the range (111)-(113). The adsorbate spectra are very similar to those on the MBE surface at 720 K. Thus, no new species are adsorbed on defects but only sticking probability and penetration capability are increased.

Towards precise defect control in layered oxide structures by using oxide molecular beam epitaxy

PubMed Central

Baiutti, Federico; Christiani, Georg

2014-01-01

Summary In this paper we present the atomic-layer-by-layer oxide molecular beam epitaxy (ALL-oxide MBE) which has been recently installed in the Max-Planck Institute for Solid State Research and we report on its present status, providing some examples that demonstrate its successful application in the synthesis of different layered oxides, with particular reference to superconducting La2CuO4 and insulator-to-metal La2− xSrxNiO4. We briefly review the ALL-oxide MBE technique and its unique capabilities in the deposition of atomically smooth single-crystal thin films of various complex oxides, artificial compounds and heterostructures, introducing our goal of pursuing a deep investigation of such systems with particular emphasis on structural defects, with the aim of tailoring their functional properties by precise defects control. PMID:24995148

III-nitride core–shell nanorod array on quartz substrates

PubMed Central

Bae, Si-Young; Min, Jung-Wook; Hwang, Hyeong-Yong; Lekhal, Kaddour; Lee, Ho-Jun; Jho, Young-Dahl; Lee, Dong-Seon; Lee, Yong-Tak; Ikarashi, Nobuyuki; Honda, Yoshio; Amano, Hiroshi

2017-01-01

We report the fabrication of near-vertically elongated GaN nanorods on quartz substrates. To control the preferred orientation and length of individual GaN nanorods, we combined molecular beam epitaxy (MBE) with pulsed-mode metal–organic chemical vapor deposition (MOCVD). The MBE-grown buffer layer was composed of GaN nanograins exhibiting an ordered surface and preferred orientation along the surface normal direction. Position-controlled growth of the GaN nanorods was achieved by selective-area growth using MOCVD. Simultaneously, the GaN nanorods were elongated by the pulsed-mode growth. The microstructural and optical properties of both GaN nanorods and InGaN/GaN core–shell nanorods were then investigated. The nanorods were highly crystalline and the core–shell structures exhibited optical emission properties, indicating the feasibility of fabricating III-nitride nano-optoelectronic devices on amorphous substrates. PMID:28345641

Substrate preparation effects on defect density in molecular beam epitaxial growth of CdTe on CdTe (100) and (211)B

DOE PAGES

Burton, George L.; Diercks, David R.; Perkins, Craig L.; ...

2017-07-01

Recent studies have demonstrated that growth of CdTe on CdTe (100) and (211)B substrates via molecular beam epitaxy (MBE) results in planar defect densities 2 and 3 orders of magnitude higher than growth on InSb (100) substrates, respectively. To understand this shortcoming, MBE growth on CdTe substrates with a variety of substrate preparation methods is studied by scanning electron microscopy, secondary ion mass spectrometry, x-ray photoelectron spectroscopy, cross sectional transmission electron microscopy, and atom probe tomography (APT). Prior to growth, carbon is shown to remain on substrate surfaces even after atomic hydrogen cleaning. APT revealed that following the growth ofmore » films, trace amounts of carbon remained at the substrate/film interface. This residual carbon may lead to structural degradation, which was determined as the main cause of higher defect density.« less

A review of molecular beam epitaxy of ferroelectric BaTiO3 films on Si, Ge and GaAs substrates and their applications

PubMed Central

Mazet, Lucie; Yang, Sang Mo; Kalinin, Sergei V; Schamm-Chardon, Sylvie; Dubourdieu, Catherine

2015-01-01

SrTiO3 epitaxial growth by molecular beam epitaxy (MBE) on silicon has opened up the route to the monolithic integration of various complex oxides on the complementary metal-oxide–semiconductor silicon platform. Among functional oxides, ferroelectric perovskite oxides offer promising perspectives to improve or add functionalities on-chip. We review the growth by MBE of the ferroelectric compound BaTiO3 on silicon (Si), germanium (Ge) and gallium arsenide (GaAs) and we discuss the film properties in terms of crystalline structure, microstructure and ferroelectricity. Finally, we review the last developments in two areas of interest for the applications of BaTiO3 films on silicon, namely integrated photonics, which benefits from the large Pockels effect of BaTiO3, and low power logic devices, which may benefit from the negative capacitance of the ferroelectric. PMID:27877816

Ultra-low specific contact resistivity (1.4 × 10-9 Ω.cm2) for metal contacts on in-situ Ga-doped Ge0.95Sn0.05 film

NASA Astrophysics Data System (ADS)

Wu, Ying; Luo, Sheng; Wang, Wei; Masudy-Panah, Saeid; Lei, Dian; Liang, Gengchiau; Gong, Xiao; Yeo, Yee-Chia

2017-12-01

A heavily Ga-doped Ge0.95Sn0.05 layer was grown on the Ge (100) substrate by molecular beam epitaxy (MBE), achieving an active doping concentration of 1.6 × 1020 cm-3 without the use of ion implantation and high temperature annealing that could cause Sn precipitation or surface segregation. An advanced nano-scale transfer length method was used to extract the specific contact resistivity ρc between the metal and the heavily doped p-Ge0.95Sn0.05 layer. By incorporating Sn into Ge and in-situ Ga doping during the MBE growth, an ultra-low ρc of 1.4 × 10-9 Ω.cm2 was achieved, which is 50% lower than the ρc of p+-Ge control and is also the lowest value obtained for metal/p-type semiconductor contacts.

Ultralow threshold graded-index separate-confinement heterostructure single quantum well (Al, Ga) As lasers

NASA Technical Reports Server (NTRS)

Derry, P. L.; Chen, H. Z.; Morkoc, H.; Yariv, A.; Lau, K. Y.

1988-01-01

Broad area graded-index separate-confinement heterostructure single quantum well lasers grown by molecular-beam epitaxy (MBE) with threshold current density as low as 93 A/sq cm (520 microns long) have been fabricated. Buried lasers formed from similarly structured MBE material with liquid phase epitaxy regrowth had threshold currents at submilliampere levels when high reflectivity coatings were applied to the end facets. A CW threshold current of 0.55 mA was obtained for a laser with facet reflectivities of about 80 percent, a cavity length of 120 micron, and an active region stripe width of 1 micron. These devices driven directly with logic level signals have switch-on delays less than 50 ps without any current prebias. Such lasers permit fully on-off switching while at the same time obviating the need for bias monitoring and feedback control.

77 FR 2700 - National Advisory Council on Minority Business Enterprise: Meeting of the National Advisory...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-01-19

.... FOR FURTHER INFORMATION CONTACT: Demetria Gallagher, National Director's Office, Minority Business....gov . SUPPLEMENTARY INFORMATION: Background: The Secretary of Commerce established the NACMBE pursuant... Enterprises (MBEs) and MBDA's role, (2) Creation of an MBE Forum, and (3) Strategic Alliances & Exports...

23 CFR 230.202 - Definitions.

Code of Federal Regulations, 2014 CFR

2014-04-01

... HIGHWAY ADMINISTRATION, DEPARTMENT OF TRANSPORTATION CIVIL RIGHTS EXTERNAL PROGRAMS Supportive Services for Minority, Disadvantaged, and Women Business Enterprises § 230.202 Definitions. (a) Minority... Federal-aid highway program as a minority business enterprise (MBE), women business enterprise (WBE), or...

23 CFR 230.202 - Definitions.

Code of Federal Regulations, 2011 CFR

2011-04-01

... HIGHWAY ADMINISTRATION, DEPARTMENT OF TRANSPORTATION CIVIL RIGHTS EXTERNAL PROGRAMS Supportive Services for Minority, Disadvantaged, and Women Business Enterprises § 230.202 Definitions. (a) Minority... Federal-aid highway program as a minority business enterprise (MBE), women business enterprise (WBE), or...

23 CFR 230.202 - Definitions.

Code of Federal Regulations, 2012 CFR

2012-04-01

... HIGHWAY ADMINISTRATION, DEPARTMENT OF TRANSPORTATION CIVIL RIGHTS EXTERNAL PROGRAMS Supportive Services for Minority, Disadvantaged, and Women Business Enterprises § 230.202 Definitions. (a) Minority... Federal-aid highway program as a minority business enterprise (MBE), women business enterprise (WBE), or...

23 CFR 230.202 - Definitions.

Code of Federal Regulations, 2013 CFR

2013-04-01

... HIGHWAY ADMINISTRATION, DEPARTMENT OF TRANSPORTATION CIVIL RIGHTS EXTERNAL PROGRAMS Supportive Services for Minority, Disadvantaged, and Women Business Enterprises § 230.202 Definitions. (a) Minority... Federal-aid highway program as a minority business enterprise (MBE), women business enterprise (WBE), or...

77 FR 66831 - Information Collection Request Submitted to OMB for Review and Approval; Comment Request...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-11-07

... information collection request (ICR), ``Participation by Disadvantaged Business Enterprises in Procurement... considered a Minority Business Enterprise (MBE) or Women's Business Enterprise (WBE) under EPA's Disadvantaged Business Enterprise (DBE) Program. EPA currently requires an entity to first attempt to become...

Gaps Analysis of Integrating Product Design, Manufacturing, and Quality Data in The Supply Chain Using Model-Based Definition

PubMed Central

Trainer, Asa; Hedberg, Thomas; Feeney, Allison Barnard; Fischer, Kevin; Rosche, Phil

2017-01-01

Advances in information technology triggered a digital revolution that holds promise of reduced costs, improved productivity, and higher quality. To ride this wave of innovation, manufacturing enterprises are changing how product definitions are communicated – from paper to models. To achieve industry's vision of the Model-Based Enterprise (MBE), the MBE strategy must include model-based data interoperability from design to manufacturing and quality in the supply chain. The Model-Based Definition (MBD) is created by the original equipment manufacturer (OEM) using Computer-Aided Design (CAD) tools. This information is then shared with the supplier so that they can manufacture and inspect the physical parts. Today, suppliers predominantly use Computer-Aided Manufacturing (CAM) and Coordinate Measuring Machine (CMM) models for these tasks. Traditionally, the OEM has provided design data to the supplier in the form of two-dimensional (2D) drawings, but may also include a three-dimensional (3D)-shape-geometry model, often in a standards-based format such as ISO 10303-203:2011 (STEP AP203). The supplier then creates the respective CAM and CMM models and machine programs to produce and inspect the parts. In the MBE vision for model-based data exchange, the CAD model must include product-and-manufacturing information (PMI) in addition to the shape geometry. Today's CAD tools can generate models with embedded PMI. And, with the emergence of STEP AP242, a standards-based model with embedded PMI can now be shared downstream. The on-going research detailed in this paper seeks to investigate three concepts. First, that the ability to utilize a STEP AP242 model with embedded PMI for CAD-to-CAM and CAD-to-CMM data exchange is possible and valuable to the overall goal of a more efficient process. Second, the research identifies gaps in tools, standards, and processes that inhibit industry's ability to cost-effectively achieve model-based-data interoperability in the pursuit of

Gaps Analysis of Integrating Product Design, Manufacturing, and Quality Data in The Supply Chain Using Model-Based Definition.

PubMed

Trainer, Asa; Hedberg, Thomas; Feeney, Allison Barnard; Fischer, Kevin; Rosche, Phil

2016-01-01

Advances in information technology triggered a digital revolution that holds promise of reduced costs, improved productivity, and higher quality. To ride this wave of innovation, manufacturing enterprises are changing how product definitions are communicated - from paper to models. To achieve industry's vision of the Model-Based Enterprise (MBE), the MBE strategy must include model-based data interoperability from design to manufacturing and quality in the supply chain. The Model-Based Definition (MBD) is created by the original equipment manufacturer (OEM) using Computer-Aided Design (CAD) tools. This information is then shared with the supplier so that they can manufacture and inspect the physical parts. Today, suppliers predominantly use Computer-Aided Manufacturing (CAM) and Coordinate Measuring Machine (CMM) models for these tasks. Traditionally, the OEM has provided design data to the supplier in the form of two-dimensional (2D) drawings, but may also include a three-dimensional (3D)-shape-geometry model, often in a standards-based format such as ISO 10303-203:2011 (STEP AP203). The supplier then creates the respective CAM and CMM models and machine programs to produce and inspect the parts. In the MBE vision for model-based data exchange, the CAD model must include product-and-manufacturing information (PMI) in addition to the shape geometry. Today's CAD tools can generate models with embedded PMI. And, with the emergence of STEP AP242, a standards-based model with embedded PMI can now be shared downstream. The on-going research detailed in this paper seeks to investigate three concepts. First, that the ability to utilize a STEP AP242 model with embedded PMI for CAD-to-CAM and CAD-to-CMM data exchange is possible and valuable to the overall goal of a more efficient process. Second, the research identifies gaps in tools, standards, and processes that inhibit industry's ability to cost-effectively achieve model-based-data interoperability in the pursuit of the

Enhanced radial growth of Mg doped GaN nanorods: A combined experimental and first-principles study

NASA Astrophysics Data System (ADS)

Nayak, Sanjay; Kumar, Rajendra; Pandey, Nidhi; Nagaraja, K. K.; Gupta, Mukul; Shivaprasad, S. M.

2018-04-01

We discuss the microstructural origin of enhanced radial growth in magnesium (Mg) doped single crystalline wurtzite gallium nitride (w-GaN) nanorods (NRs) grown by MBE, using electron microscopy and first-principles Density Functional Theory calculations. Experimentally, we observe that Mg incorporation increases the surface coverage of the grown samples as a consequence of an increase in the radial growth rate of the NRs. We also observe that the coalescence of NRs becomes prominent and the height at which coalescence between proximal rods occurs decreases with increase in Mg concentration. From first-principles calculations, we find that the surface free energy of the Mg doped surface reduces with increasing Mg concentration in the samples. The calculations further suggest a reduction in the adsorption energy and the diffusion barrier of Ga adatoms along [ 11 2 ¯ 0 ] on the side wall surface of the NRs as the underlying mechanism for the observed enhancement in the radial growth rate of GaN NRs. The physics and chemistry behind reduction of the adsorption energy of Ga ad-atoms on the doped surface are explained in the light of electronic structure of the relevant surfaces.

An Evaluation of Portable Wet Bulb Globe Temperature Monitor Accuracy.

PubMed

Cooper, Earl; Grundstein, Andrew; Rosen, Adam; Miles, Jessica; Ko, Jupil; Curry, Patrick

2017-12-01

  Wet bulb globe temperature (WBGT) is the gold standard for assessing environmental heat stress during physical activity. Many manufacturers of commercially available instruments fail to report WBGT accuracy.   To determine the accuracy of several commercially available WBGT monitors compared with a standardized reference device.   Observational study.   Field test.   Six commercially available WBGT devices.   Data were recorded for 3 sessions (1 in the morning and 2 in the afternoon) at 2-minute intervals for at least 2 hours. Mean absolute error (MAE), root mean square error (RMSE), mean bias error (MBE), and the Pearson correlation coefficient ( r) were calculated to determine instrument performance compared with the reference unit.   The QUESTemp° 34 (MAE = 0.24°C, RMSE = 0.44°C, MBE = -0.64%) and Extech HT30 Heat Stress Wet Bulb Globe Temperature Meter (Extech; MAE = 0.61°C, RMSE = 0.79°C, MBE = 0.44%) demonstrated the least error in relation to the reference standard, whereas the General WBGT8778 Heat Index Checker (General; MAE = 1.18°C, RMSE = 1.34°C, MBE = 4.25%) performed the poorest. The QUESTemp° 34 and Kestrel 4400 Heat Stress Tracker units provided conservative measurements that slightly overestimated the WBGT provided by the reference unit. Finally, instruments using the psychrometric wet bulb temperature (General, REED Heat Index WBGT Meter, and WBGT-103 Heat Stroke Checker) tended to underestimate the WBGT, and the resulting values more frequently fell into WBGT-based activity categories with fewer restrictions as defined by the American College of Sports Medicine.   The QUESTemp° 34, followed by the Extech, had the smallest error compared with the reference unit. Moreover, the QUESTemp° 34, Extech, and Kestrel units appeared to offer conservative yet accurate assessments of the WBGT, potentially minimizing the risk of allowing physical activity to continue in stressful heat environments. Instruments using the

Analysis of Etched CdZnTe Substrates

NASA Astrophysics Data System (ADS)

Benson, J. D.; Bubulac, L. O.; Jaime-Vasquez, M.; Lennon, C. M.; Arias, J. M.; Smith, P. J.; Jacobs, R. N.; Markunas, J. K.; Almeida, L. A.; Stoltz, A.; Wijewarnasuriya, P. S.; Peterson, J.; Reddy, M.; Jones, K.; Johnson, S. M.; Lofgreen, D. D.

2016-09-01

State-of-the-art as-received (112)B CdZnTe substrates have been examined for surface impurity contamination and polishing residue. Two 4 cm × 4 cm and one 6 cm × 6 cm (112)B state-of-the-art as-received CdZnTe wafers were analyzed. A maximum surface impurity concentration of Al = 1.7 × 1015 atoms cm-2, Si = 3.7 × 1013 atoms cm-2, Cl = 3.12 × 1015 atoms cm-2, S = 1.7 × 1014 atoms cm-2, P = 1.1 × 1014 atoms cm-2, Fe = 1.0 × 1013 atoms cm-2, Br = 1.2 × 1014 atoms cm-2, and Cu = 4 × 1012 atoms cm-2 was observed on the as-received CdZnTe wafers. CdZnTe particulates and residual SiO2 polishing grit were observed on the surface of the as-received (112)B CdZnTe substrates. The polishing grit/CdZnTe particulate density on CdZnTe wafers was observed to vary across a 6 cm × 6 cm wafer from ˜4 × 107 cm-2 to 2.5 × 108 cm-2. The surface impurity and damage layer of the (112)B CdZnTe wafers dictate that a molecular beam epitaxy (MBE) preparation etch is required. The contamination for one 4 cm × 4 cm and one 6 cm × 6 cm CdZnTe wafer after a standard MBE Br:methanol preparation etch procedure was also analyzed. A maximum surface impurity concentration of Al = 2.4 × 1015 atoms cm-2, Si = 4.0 × 1013 atoms cm-2, Cl = 7.5 × 1013 atoms cm-2, S = 4.4 × 1013 atoms cm-2, P = 9.8 × 1013 atoms cm-2, Fe = 1.0 × 1013 atoms cm-2, Br = 2.9 × 1014 atoms cm-2, and Cu = 5.2 × 1012 atoms cm-2 was observed on the MBE preparation-etched CdZnTe wafers. The MBE preparation-etched surface contamination consists of Cd(Zn)Te particles/flakes. No residual SiO2 polishing grit was observed on the (112)B surface.

Characterization of Polar, Semi-Polar, and Non-Polar p-n Homo and Hetero-junctions grown by Ammonia Molecular Beam Epitaxy

NASA Astrophysics Data System (ADS)

Hurni, Christophe Antoine

Widespread interest in the group III-Nitrides began with the achievement of p-type conductivity in the early 1990s in Mg-doped GaN films grown by metal organic chemical vapor deposition (MOCVD) by Nakamura et al. Indeed, MOCVD-grown Mg-doped GaN is insulating as-grown, because of the formation of neutral Mg-H complexes. Nakamura et al. showed that a rapid thermal anneal removes the hydrogen and enables p-conductivity. Shortly after this discovery, the first LEDs and lasers were demonstrated by Nakamura et al. The necessary annealing step is problematic for devices which need a buried p-layer, such as hetero-junction bipolar transistors. Ammonia molecular beam epitaxy (NH3-MBE) has a great potential for growing vertical III-Nitrides-based devices, thank to its N-rich growth conditions and all the usual advantages of MBE, which include a low-impurity growth environment, in situ monitoring techniques as well as the ability to grow sharp interfaces. We first investigated the growth of p-GaN by NH3-MBE. We found that the hole concentration strongly depends on the growth temperature. Thanks to comprehensive Hall and transfer length measurements, we found evidences for a compensating donor defects in NH3-MBE-grown Mg-doped GaN films. High-quality p-n junctions with very low reverse current and close to unity ideality factor were also grown and investigated. For the design of heterojunction devices such as laser diodes, light emitting diodes or heterojunction bipolar transistors, hetero-interface's characteristics such as the band offset or interface charges are fundamental. A technique developed by Kroemer et al. uses capacitance-voltage (C-V) profiling to extract band-offsets and charges at a hetero-interface. We applied this technique to the III-Nitrides. We discovered that for the polar III-Nitrides, the technique is not applicable because of the very large polarization charge. We nevertheless successfully measured the polarization charge at the AlGaN/GaN hetero

Density-functional theory computer simulations of CZTS0.25Se0.75 alloy phase diagrams

NASA Astrophysics Data System (ADS)

Chagarov, E.; Sardashti, K.; Haight, R.; Mitzi, D. B.; Kummel, A. C.

2016-08-01

Density-functional theory simulations of CZTS, CZTSe, and CZTS0.25Se0.75 photovoltaic compounds have been performed to investigate the stability of the CZTS0.25Se0.75 alloy vs. decomposition into CZTS, CZTSe, and other secondary compounds. The Gibbs energy for vibrational contributions was estimated by calculating phonon spectra and thermodynamic properties at finite temperatures. It was demonstrated that the CZTS0.25Se0.75 alloy is stabilized not by enthalpy of formation but primarily by the mixing contributions to the Gibbs energy. The Gibbs energy gains/losses for several decomposition reactions were calculated as a function of temperature with/without intermixing and vibration contributions to the Gibbs energy. A set of phase diagrams was built in the multidimensional space of chemical potentials at 300 K and 900 K temperatures to demonstrate alloy stability and boundary compounds at various chemical conditions. It demonstrated for CZTS0.25Se0.75 that the chemical potentials for stability differ between typical processing temperature (˜900 K) and operating temperature (300 K). This implies that as cooling progresses, the flux/concentration of S should be increased in MBE growth to maintain the CZTS0.25Se0.75 in a thermodynamically stable state to minimize phase decomposition.

Low-temperature, ultrahigh-vacuum tip-enhanced Raman spectroscopy combined with molecular beam epitaxy for in situ two-dimensional materials' studies

NASA Astrophysics Data System (ADS)

Sheng, Shaoxiang; Li, Wenbin; Gou, Jian; Cheng, Peng; Chen, Lan; Wu, Kehui

2018-05-01

Tip-enhanced Raman spectroscopy (TERS), which combines scanning probe microscopy with the Raman spectroscopy, is capable to access the local structure and chemical information simultaneously. However, the application of ambient TERS is limited by the unstable and poorly controllable experimental conditions. Here, we designed a high performance TERS system based on a low-temperature ultrahigh-vacuum scanning tunneling microscope (LT-UHV-STM) and combined with a molecular beam epitaxy (MBE) system. It can be used for growing two-dimensional (2D) materials and for in situ STM and TERS characterization. Using a 2D silicene sheet on the Ag(111) surface as a model system, we achieved an unprecedented 109 Raman single enhancement factor in combination with a TERS spatial resolution down to 0.5 nm. The results show that TERS combined with a MBE system can be a powerful tool to study low dimensional materials and surface science.

Concentration transient analysis of antimony surface segregation during Si(100) molecular beam epitaxy

NASA Technical Reports Server (NTRS)

Markert, L. C.; Greene, J. E.; Ni, W.-X.; Hansson, G. V.; Sundgren, J.-E.

1991-01-01

Antimony surface segregation during Si(100) molecular beam epitaxy (MBE) was investigated at temperatures T(sub s) = 515 - 800 C using concentration transient analysis (CTA). The dopant surface coverage Theta, bulk fraction gamma, and incorporation probability sigma during MBE were determined from secondary-ion mass spectrometry depth profiles of modulation-doped films. Programmed T(sub s) changes during growth were used to trap the surface-segregated dopant overlayer, producing concentration spikes whose integrated area corresponds to Theta. Thermal antimony doping by coevaporation was found to result in segregation strongly dependent on T(sub s) with Theta(sub Sb) values up to 0.9 monolayers (ML): in films doped with Sb(+) ions accelerated by 100 V, Theta(sub Sb) was less than or equal to 4 x 10(exp -3) ML. Surface segregation of coevaporated antimony was kinematically limited for the film growth conditions in these experiments.

Electron microscopy of AlN-SiC interfaces and solid solutions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bentley, J.; Tanaka, S.; Davis, R.F.

In a 2H AlN-SiC solid solution grown by MBE on {alpha}(6H)-SiC (3{degrees} from [0001]), the epilayer contained a high density of basal faults related to {approximately}5 nm steps on the growth surface: no compositional inhomogeneity was detected by PEELS. In diffusion couples of polycrystalline, sintered AlN on SiC annealed at 1600 and 1700{degrees}C. 8H sialon [nominally (AlN){sub 2}Al{sub 2}O{sub 3}] formed at the interface of SiC and recrystallized epitactic AlN grains, and Si{sub 3}N{sub 4}-rich {beta}{prime} sialon particles formed in the SiC. No interdiffusion was detected by PEELS in diffusion couples of MBE-grown AlN on SiC annealed at 1700 andmore » 1850{degrees}C. Irregular epilayer thickness explains companion Auger depth profile results.« less

Objective and subjective measures indicate that orthographically similar words produce a blocking experience.

PubMed

Leynes, P Andrew; Brown, Jaime; Landau, Joshua D

2011-01-01

Memory blocks are a common experience characterised by inappropriate retrieval of information that impairs memory search processes. In five studies, memory blocks were induced via exposure to orthographically similar words (Smith & Tindell, 1997) while participants reported their subjective experiences to determine whether the memory block effect (MBE) paradigm produces a feeling of being blocked. Experiments 1 and 3 provided evidence that the MBE is associated with more blocked experiences. In Experiments 2 and 4 increased blocking experiences correlated with blocked fragments when the experimental manipulation was disguised, which demonstrates that ratings were not contaminated by demand characteristics. Experiment 5 demonstrated that blocking happens even when there is no study list. Collectively, the subjective retrieval ratings and the objective response data provide converging evidence that exposure to orthographically similar words induces a memory block characterised by an ineffective memory search that perseverates on interfering information.

Heterointerface engineering of broken-gap InAs/GaSb multilayer structures.

PubMed

Liu, Jheng-Sin; Zhu, Yan; Goley, Patrick S; Hudait, Mantu K

2015-02-04

Broken-gap InAs/GaSb strain balanced multilayer structures were grown by molecular beam epitaxy (MBE), and their structural, morphological, and band alignment properties were analyzed. Precise shutter sequence during the MBE growth process, enable to achieve the strain balanced structure. Cross-sectional transmission electron microscopy exhibited sharp heterointerfaces, and the lattice line extended from the top GaSb layer to the bottom InAs layer. X-ray analysis further confirmed a strain balanced InAs/GaSb multilayer structure. A smooth surface morphology with surface roughness of ∼0.5 nm was demonstrated. The effective barrier height -0.15 eV at the GaSb/InAs heterointerface was determined by X-ray photoelectron spectroscopy, and it was further corroborated by simulation. These results are important to demonstrate desirable characteristics of mixed As/Sb material systems for high-performance and low-power tunnel field-effect transistor applications.

A review of molecular beam epitaxy of ferroelectric BaTiO 3 films on Si, Ge and GaAs substrates and their applications

DOE PAGES

Mazet, Lucie; Yang, Sang Mo; Kalinin, Sergei V.; ...

2015-06-30

SrTiO 3 epitaxial growth by molecular beam epitaxy (MBE) on silicon has opened up the route to the monolithic integration of various complex oxides on the complementary metal-oxide-semiconductor silicon platform. Among functional oxides, ferroelectric perovskite oxides offer promising perspectives to improve or add functionalities on-chip. We review the growth by MBE of the ferroelectric compound BaTiO 3 on silicon (Si), germanium (Ge) and gallium arsenide (GaAs) and we discuss the film properties in terms of crystalline structure, microstructure and ferroelectricity. Lastly, we review the last developments in two areas of interest for the applications of BaTiO 3 films on silicon,more » namely integrated photonics, which benefits from the large Pockels effect of BaTiO 3, and low power logic devices, which may benefit from the negative capacitance of the ferroelectric.« less

Freely Suspended Two-Dimensional Electron Gases.

NASA Astrophysics Data System (ADS)

Blick, Robert; Monzon, Franklin; Roukes, Michael; Wegscheider, Werner; Stern, Frank

1998-03-01

We present a new technique that has allowed us to build the first freely suspended two-dimensional electron gas devices from AlGaAs/GaAs/AlAs heterostructures. This technique is based upon specially MBE grown structures that include a sacrificial layer. In order to design the MBE layer sequence, the conduction band lineup for these samples was modelled numerically. The overall focus of this work is to provide a new approach for studies of the quantum mechanical properties of nanomachined structures. Our current experiments are directed toward use of these techniques for research on very high frequency nanomechanical resonators. The high mobility 2DEG system provides a unique approach to realizing wideband, extremely sensitive displacement detection, using the piezoelectric properties of GaAs to modulate a suspended nanometer-scale HEMT. This approach offers promise for sensitive displacement detectors with sub-nanometer resolution and bandwidths into the microwave range.

A method of producing high quality oxide and related films on surfaces

NASA Technical Reports Server (NTRS)

Ruckman, Mark W.; Strongin, Myron; Gao, Yongli

1991-01-01

Aluminum oxide or aluminum nitride films were deposited on molecular beam epitaxy (MBE) grown GaAS(100) using a novel cryogenic-based reactive thin film deposition technique. The process involves the condensation of molecular oxygen, ammonia, or other gases normally used for reactive thin film deposition on the substrate before the metal is deposited. The metal vapor is deposited into this layer and reacts with the molecular solid to form the desired compound or a precursor that can be thermally decomposed to generate the desired compound. The films produced by this method are free of impurities, and the low temperatures can be used to control the film and interfacial structure. The process can be easily integrated with existing MBE systems. Ongoing research using the same apparatus suggests that photon or electron irradiation could be used to promote the reactions needed to produce the intended material.

Why evidence-based medicine failed in patient care and medicine-based evidence will succeed.

PubMed

Horwitz, Ralph I; Singer, Burton H

2017-04-01

Evidence-based medicine (EBM) has succeeded in strengthening the evidence base for population medicine. Where EBM has failed is in answering the practicing doctor's question of what a likely outcome would be when a given treatment is administered to a particular patient with her own distinctive biological and biographical (life experience) profile. We propose Medicine-based evidence (MBE), based on the profiles of individual patients, as the evidence base for individualized or personalized medicine. MBE will build an archive of patient profiles using data from all study types and data sources, and will include both clinical and socio-behavioral information. The clinician seeking guidance for the management of an individual patient will start with the patient's longitudinal profile and find approximate matches in the archive that describes how similar patients responded to a contemplated treatment and alternative treatments. Copyright © 2017 Elsevier Inc. All rights reserved.

MBE growth of nanowires using colloidal Ag nanoparticles

NASA Astrophysics Data System (ADS)

Bouravleuv, A. D.; Ilkiv, I. V.; Reznik, R. R.; Shtrom, I. V.; Khrebtov, A. I.; Samsonenko, Yu B.; Soshnikov, I. P.; Cirlin, G. E.; Lipsanen, H.

2017-06-01

Ag colloidal nanoparticles are used as a catalyst for growth of GaAs nanowires by the molecular beam epitaxy on the Si(111) and GaAs(111)B substrate surfaces. The scanning electron microscopy measurements revealed that the nanowire formation occurs in different ways on different substrates, but the parameters of the synthesized nanowires open great prospects for their further use.

Improvements of MCT MBE Growth on GaAs

NASA Astrophysics Data System (ADS)

Ziegler, J.; Wenisch, J.; Breiter, R.; Eich, D.; Figgemeier, H.; Fries, P.; Lutz, H.; Wollrab, R.

2014-08-01

In recent years, continuous progress has been published in the development of HgCdTe (MCT) infrared (IR) focal plane arrays (FPAs) fabricated by molecular beam epitaxy on GaAs substrates. In this publication, further characterization of the state-of-the art 1280 × 1024 pixel, 15- μm pitch detector fabricated from this material in both the mid-wavelength (MWIR) and long-wavelength (LWIR) IR region will be presented. For MWIR FPAs, the percentage of defective pixel remains below 0.5% up to an operating temperature ( T OP) of around 100 K. For the LWIR FPA, an operability of 99.25% was achieved for a T OP of 76 K. Additionally, the beneficial effect of the inclusion of MCT layers with a graded composition region was investigated and demonstrated on current-voltage ( IV) characteristics on test diodes in a MWIR FPA.

Multidisciplinary model-based-engineering for laser weapon systems: recent progress

NASA Astrophysics Data System (ADS)

Coy, Steve; Panthaki, Malcolm

2013-09-01

We are working to develop a comprehensive, integrated software framework and toolset to support model-based engineering (MBE) of laser weapons systems. MBE has been identified by the Office of the Director, Defense Science and Engineering as one of four potentially "game-changing" technologies that could bring about revolutionary advances across the entire DoD research and development and procurement cycle. To be effective, however, MBE requires robust underlying modeling and simulation technologies capable of modeling all the pertinent systems, subsystems, components, effects, and interactions at any level of fidelity that may be required in order to support crucial design decisions at any point in the system development lifecycle. Very often the greatest technical challenges are posed by systems involving interactions that cut across two or more distinct scientific or engineering domains; even in cases where there are excellent tools available for modeling each individual domain, generally none of these domain-specific tools can be used to model the cross-domain interactions. In the case of laser weapons systems R&D these tools need to be able to support modeling of systems involving combined interactions among structures, thermal, and optical effects, including both ray optics and wave optics, controls, atmospheric effects, target interaction, computational fluid dynamics, and spatiotemporal interactions between lasing light and the laser gain medium. To address this problem we are working to extend Comet™, to add the addition modeling and simulation capabilities required for this particular application area. In this paper we will describe our progress to date.

40 CFR 33.205 - How does an entity become certified by EPA?

Code of Federal Regulations, 2010 CFR

2010-07-01

... further information and required application forms to any entity interested in MBE or WBE certification. The applicant must attest to the accuracy and truthfulness of the information on the application form..., if applicable. (b) Application processing. EPA OSDBU will advise each applicant within 15 days...

23 CFR 230.202 - Definitions.

Code of Federal Regulations, 2010 CFR

2010-04-01

... for Minority, Disadvantaged, and Women Business Enterprises § 230.202 Definitions. (a) Minority Business Enterprise, as used in this subpart, refers to all small businesses which participate in the Federal-aid highway program as a minority business enterprise (MBE), women business enterprise (WBE), or...

77 FR 25142 - Meeting of the National Advisory Council on Minority Business Enterprise

Federal Register 2010, 2011, 2012, 2013, 2014

2012-04-27

... on final recommendations to accelerate the growth of minority-owned businesses in fulfillment of the... growth of minority-owned businesses in domestic and global markets. Recommendations for proposed programs... include: (1) Definition of Minority Business Enterprises (MBEs) and MBDA's role, (2) Creation of an MBE...

A review of earth abundant ZnO-based materials for thermoelectric and photovoltaic applications

NASA Astrophysics Data System (ADS)

Wang, Yang; Zhou, Chuanle; Elquist, Aline M.; Ghods, Amirhossein; Saravade, Vishal G.; Lu, Na; Ferguson, Ian

2018-02-01

Zinc oxide (ZnO) is an earth abundant wide bandgap semiconductor of great interest in the recent years. ZnO has many unique properties, such as non-toxic, large direct bandgap, high exciton binding energy, high transparency in visible and infrared spectrum, large Seebeck coefficient, high thermal stability, high electron diffusivity, high electron mobility, and availability of various nanostructures, making it a promising material for many applications. The growth techniques of ZnO is reviewed in this work, including sputtering, PLD, MOCVD and MBE techniques, focusing on the crystalline quality, electrical and optical properties. The problem with p-type doping ZnO is also discussed, and the method to improve p-type doping efficiency is reviewed. This paper also summarizes the current state of art of ZnO in thermoelectric and photovoltaic applications, including the key parameters, different device structures, and future development.

Model-Based Enterprise Summit Report

DTIC Science & Technology

2014-02-01

A Moderator: John Horst 1700-1830 Wrap-Up and Vendor Demos Tuesday , 11 December, 2012 Website: http://www.nist.gov/el/msid/mbesummit_2012.cfm MBE...Affordable Access to Modeling & Simulation and High Performance Computing for SMEs Dennis Thompson, SCRA 1210-1230 NAMII Overview Ed Morris , Director

Can the Differences between Education and Neuroscience Be Overcome by Mind, Brain, and Education?

ERIC Educational Resources Information Center

Samuels, Boba M.

2009-01-01

The new field of Mind, Brain, and Education (MBE)--sometimes called educational neuroscience--is posited as a mediator between neuroscience and education. Several foundational concerns, however, can be raised about this emerging field. The differences between neuroscience and education are many, including differences in their histories,…

48 CFR 2426.7001 - Policy.

Code of Federal Regulations, 2012 CFR

2012-10-01

... 48 Federal Acquisition Regulations System 6 2012-10-01 2012-10-01 false Policy. 2426.7001 Section... SOCIOECONOMIC PROGRAMS OTHER SOCIOECONOMIC PROGRAMS Minority Business Enterprises 2426.7001 Policy. It is the policy of the Department to foster and promote Minority Business Enterprise (MBE) participation in its...

Growth of beta-MnO2 Films on TiO2(110) by Oxygen-Plasma-Assisted Molecular Beam Epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chambers, Scott A.; Liang, Yong

Discusses the essential need to understand the heterogeneous chemistry of mineral surfaces at a molecular level for accurate modeling of surface complexion processes in natural environments. Describes the first MBE growth and characterization of ultrathin films of B-MnO2 on TiO2 (110).

PRAYING MANTIS II: The Answer to Iranian Compliance

DTIC Science & Technology

2010-06-01

Andrew P. Layton , MBE MERCIAN (GBR Army), for his countless hours of editorial assistance and keen observations during the writing of this paper...Austin (2009, 2009): 1-33. Gordon, Michael R., Jeffery Gettleman, Isabel Kershner, Eric Schmitt, and Mona el- Naggar. "U.S. Officials Say Israel

40 CFR 33.404 - When must a recipient negotiate fair share objectives with EPA?

Code of Federal Regulations, 2010 CFR

2010-07-01

... share objectives with EPA? 33.404 Section 33.404 Protection of Environment ENVIRONMENTAL PROTECTION... STATES ENVIRONMENTAL PROTECTION AGENCY PROGRAMS Fair Share Objectives § 33.404 When must a recipient negotiate fair share objectives with EPA? A recipient must submit its proposed MBE and WBE fair share...

Enhanced kinetics of Al{sub 0.97}Ga{sub 0.03}As wet oxidation through the use of hydrogenation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Le Du, M.; Sagnes, I.; Beaudoin, G.

2006-09-11

This letter reports on a different kinetic behavior of the wet thermal oxidation process resulting in Al{sub x}O{sub y} material depending on the AlAs material growth method, molecular beam epitaxy (MBE) or metal organic vapor phase epitaxy (MOVPE). A higher oxidation rate for MOVPE-grown materia is systemically found. Considering the major role of hydrogen in the wet oxidation reaction, it is believed this observation could be linked with the higher hydrogen residual concentration in MOVPE layers. Using a hydrogen plasma, MBE-grown Al{sub 0.97}Ga{sub 0.03}As layers were hydrogened prior to oxidation. This hydrogenated sample showed a ten times enhanced oxidation ratemore » as compared to the nonhydrogenated Al{sub 0.97}Ga{sub 0.03}As sample. This behavior is mainly attributed to a hydrogen induced modification of the diffusion limited regime, enhancing the diffusion length of oxidizing species and reaction products in the oxidized layers.« less

Surface and Thin Film Analysis during Metal Organic Vapour Phase Epitaxial Growth

NASA Astrophysics Data System (ADS)

Richter, Wolfgang

2007-06-01

In-situ analysis of epitaxial growth is the essential ingredient in order to understand the growth process, to optimize growth and last but not least to monitor or even control the epitaxial growth on a microscopic scale. In MBE (molecular beam epitaxy) in-situ analysis tools existed right from the beginning because this technique developed from Surface Science technology with all its electron based analysis tools (LEED, RHEED, PES etc). Vapour Phase Epitaxy, in contrast, remained for a long time in an empirical stage ("alchemy") because only post growth characterisations like photoluminescence, Hall effect and electrical conductivity were available. Within the last two decades, however, optical techniques were developed which provide similar capabilities as in MBE for Vapour Phase growth. I will discuss in this paper the potential of Reflectance Anisotropy Spectroscopy (RAS) and Spectroscopic Ellipsometry (SE) for the growth of thin epitaxial semiconductor layers with zincblende (GaAs etc) and wurtzite structure (GaN etc). Other techniques and materials will be also mentioned.

High density of (pseudo) periodic twin-grain boundaries in molecular beam epitaxy-grown van der Waals heterostructure: MoTe{sub 2}/MoS{sub 2}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Diaz, Horacio Coy; Ma, Yujing; Chaghi, Redhouane

2016-05-09

Growth of transition metal dichalcogenide heterostructures by molecular beam epitaxy (MBE) promises synthesis of artificial van der Waals materials with controllable layer compositions and separations. Here, we show that MBE growth of 2H-MoTe{sub 2} monolayers on MoS{sub 2} substrates results in a high density of mirror-twins within the films. The grain boundaries are tellurium deficient, suggesting that Te-deficiency during growth causes their formation. Scanning tunneling microscopy and spectroscopy reveal that the grain boundaries arrange in a pseudo periodic “wagon wheel” pattern with only ∼2.6 nm repetition length. Defect states from these domain boundaries fill the band gap and thus give themore » monolayer an almost metallic property. The band gap states pin the Fermi-level in MoTe{sub 2} and thus determine the band-alignment in the MoTe{sub 2}/MoS{sub 2} interface.« less

Optical and Structural Properties of Microcrystalline GaN on an Amorphous Substrate Prepared by a Combination of Molecular Beam Epitaxy and Metal-Organic Chemical Vapor Deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Min, Jung-Wook; Hwang, Hyeong-Yong; Kang, Eun-Kyu

2016-05-01

Microscale platelet-shaped GaN grains were grown on amorphous substrates by a combined epitaxial growth method of molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). First, MBE GaN was grown on an amorphous substrate as a pre-orienting layer and its structural properties were investigated. Second, MOCVD grown GaN samples using the different growth techniques of planar and selective area growth (SAG) were comparatively investigated by transmission electron microscopy (TEM), cathodoluminescence (CL), and photoluminescence (PL). In MOCVD planar GaN, strong bound exciton peaks dominated despite the high density of the threading dislocations (TDs). In MOCVD SAG GaN, on the othermore » hand, TDs were clearly reduced with bending, but basal stacking fault (BSF) PL peaks were observed at 3.42 eV. The combined epitaxial method not only provides a deep understanding of the growth behavior but also suggests an alternative approach for the growth of GaN on amorphous substances.« less

AlGaN/GaN high electron mobility transistor grown on GaN template substrate by molecule beam epitaxy system

NASA Astrophysics Data System (ADS)

Tsai, Jenn-Kai; Chen, Y. L.; Gau, M. H.; Pang, W. Y.; Hsu, Y. C.; Lo, Ikai; Hsieh, C. H.

2008-03-01

In this study, AlGaN/GaN high electron mobility transistor (HEMT) structure was grow on GaN template substrate radio frequency plasma assisted molecular beam epitaxy (MBE) equipped with an EPI UNI-Bulb nitrogen plasma source. The undoped GaN template substrate was grown on c-sapphire substrate by metal organic vapor phase epitaxy system (MOPVD). After growth of MOVPE and MBE, the samples are characterized by double crystal X-ray diffraction (XRD), transmission electron microscopy (TEM), field emission scanning electron microscopy (SEM), atomic force microscopy (AFM), and Hall effect measurements. We found that the RMS roughness of template substrate play the major role in got the high value of mobility on AlGaN/GaN HEMT. When the roughness was lower than 0.77 nm in a 25 μm x 25 μm area, the mobility of HEMT at the temperature of 77 K was over 10000 cm^2/Vs.

Magnetic properties of epitaxial β-Nb2N thin film on SiC substrate

NASA Astrophysics Data System (ADS)

Yang, Zihao; Myers, Roberto; Katzer, D. Scott; Nepal, Neeraj; Meyer, David J.

Previously superconductivity in Nb2N was studied in thin films synthesized by reactive magnetron sputtering or pulsed laser deposition. Recently, Nb2N was synthesized by molecular beam epitaxy (MBE). Here, we report on the magnetic properties of MBE grown Nb2N measured by SQUID magnetometry. The single hexagonal β phase Nb2N is grown on a semi-insulating Si-face 4H SiC (0001) substrate in nitrogen rich conditions at a substrate temperature of 850 °C. In-plane magnetization as a function of magnetic field measured at 5 K shows type-II superconductivity with critical fields Hc1 and Hc2 of 300 Oe and 10 kOe, respectively. In-plane field-cooled and zero-field-cooled a critical temperature (Tc) of 11.5 K, higher than in sputtered Nb2N films. This work was supported by Army Research Office and the Office of Naval Research.

Tribal Energy Program, Assisting Tribes to Realize Their Energy Visions (Brochure), Energy Efficiency & Renewable Energy (EERE)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Not Available

2013-06-01

This 12-page brochure provides an overview of the U.S. Department of Energy Office of Energy Efficiency and Renewable Energy's Tribal Energy Program and describes the financial, technical, and educational assistance it provides to help tribes develop their renewable energy resources and reduce their energy consumption.

Local moment formation and magnetic coupling of Mn dopants in Bi2Se3: A low-temperature ferromagnetic resonance study

NASA Astrophysics Data System (ADS)

Savchenko, D.; Tarasenko, R.; Vališka, M.; Kopeček, J.; Fekete, L.; Carva, K.; Holý, V.; Springholz, G.; Sechovský, V.; Honolka, J.

2018-05-01

We compare the magnetic and electronic configuration of single Mn atoms in molecular beam epitaxy (MBE) grown Bi2Se3 thin films, focusing on electron paramagnetic (ferromagnetic) resonance (EPR and FMR, respectively) and superconducting quantum interference device (SQUID) techniques. X-ray diffraction (XRD) and electron backscatter diffraction (EBSD) reveal the expected increase of disorder with increasing concentration of magnetic guest atoms, however, Kikuchi patterns show that disorder consists majorly of μm-scale 60° twin domains in the hexagonal Bi2Se3 structure, which are promoted by the presence of single unclustered Mn impurities. Ferromagnetism below TC (5.4±0.3) K can be well described by critical scaling laws M (T) (1 - T /TC) β with a critical exponent β = (0.34 ± 0.2) , suggesting 3D Heisenberg class magnetism instead of e.g. 2D-type coupling between Mn-spins in van der Waals gap sites. From EPR hyperfine structure data we determine a Mn2+ (d5, S = 5/2) electronic configuration with a g-factor of 2.002 for -1/2 → +1/2 transitions. In addition, from the strong dependence of the low temperature FMR fields and linewidth on the field strength and orientation with respect to the Bi2Se3 (0001) plane, we derive magnetic anisotropy energies of up to K1 = -3720 erg/cm3 in MBE-grown Mn-doped Bi2Se3, reflecting the first order magneto-crystalline anisotropy of an in-plane magnetic easy plane in a hexagonal (0001) crystal symmetry. We observe an increase of K1 with increasing Mn concentration, which we interpret to be correlated to a Mn-induced in-plane lattice contraction. Across the ferromagnetic-paramagnetic transition the FMR intensity is suppressed and resonance fields converge the paramagnetic limit of Mn2+ (d5, S = 5/2).

43 CFR 34.8 - Affirmative action plans.

Code of Federal Regulations, 2010 CFR

2010-10-01

... the employment of minorities and women and the utilization of MBE's and FBE's in the construction and... women, by each job group. (3) Goals should be set in proportion to the group's general availability in... dissemination of information on business opportunities and procurement practices to minority and women's...

76 FR 71514 - Meeting of the National Advisory Council on Minority Business Enterprise

Federal Register 2010, 2011, 2012, 2013, 2014

2011-11-18

... Enterprise (NACMBE) will hold its fourth meeting to discuss the work of the three subcommittees and... be considered: During the meeting the three subcommittees will report on their work and the Council...) Definition of Minority Business Enterprises (MBEs) and MBDA's role, (2) Creation of an MBE Forum, and (3...

Sulfur Doping of InAs

DTIC Science & Technology

2015-06-04

dopant in III-V molecular beam epitaxial (MBE) growth, due to the high vapor pressure. This is a significant concern as high vapor pressure species...results were also observed with co-implantation of gallium with selenium, which sits on the group-V site [10]. Consequently, the sulfur dose was

A Substantive Process Analysis of Responses to Items from the Multistate Bar Examination

ERIC Educational Resources Information Center

Bonner, Sarah M.; D'Agostino, Jerome V.

2012-01-01

We investigated examinees' cognitive processes while they solved selected items from the Multistate Bar Exam (MBE), a high-stakes professional certification examination. We focused on ascertaining those mental processes most frequently used by examinees, and the most common types of errors in their thinking. We compared the relationships between…

48 CFR 2426.7001 - Policy.

Code of Federal Regulations, 2010 CFR

2010-10-01

... SOCIOECONOMIC PROGRAMS OTHER SOCIOECONOMIC PROGRAMS Minority Business Enterprises 2426.7001 Policy. It is the policy of the Department to foster and promote Minority Business Enterprise (MBE) participation in its... business enterprise” is a business which is at least 51 percent owned by one or more minority group members...

Solar energy in the context of energy use, energy transportation and energy storage.

PubMed

MacKay, David J C

2013-08-13

Taking the UK as a case study, this paper describes current energy use and a range of sustainable energy options for the future, including solar power and other renewables. I focus on the area involved in collecting, converting and delivering sustainable energy, looking in particular detail at the potential role of solar power. Britain consumes energy at a rate of about 5000 watts per person, and its population density is about 250 people per square kilometre. If we multiply the per capita energy consumption by the population density, then we obtain the average primary energy consumption per unit area, which for the UK is 1.25 watts per square metre. This areal power density is uncomfortably similar to the average power density that could be supplied by many renewables: the gravitational potential energy of rainfall in the Scottish highlands has a raw power per unit area of roughly 0.24 watts per square metre; energy crops in Europe deliver about 0.5 watts per square metre; wind farms deliver roughly 2.5 watts per square metre; solar photovoltaic farms in Bavaria, Germany, and Vermont, USA, deliver 4 watts per square metre; in sunnier locations, solar photovoltaic farms can deliver 10 watts per square metre; concentrating solar power stations in deserts might deliver 20 watts per square metre. In a decarbonized world that is renewable-powered, the land area required to maintain today's British energy consumption would have to be similar to the area of Britain. Several other high-density, high-consuming countries are in the same boat as Britain, and many other countries are rushing to join us. Decarbonizing such countries will only be possible through some combination of the following options: the embracing of country-sized renewable power-generation facilities; large-scale energy imports from country-sized renewable facilities in other countries; population reduction; radical efficiency improvements and lifestyle changes; and the growth of non-renewable low

Predictors of malignant brain edema in middle cerebral artery infarction observed on CT angiography.

PubMed

Kim, Hoon; Jin, Seon Tak; Kim, Young Woo; Kim, Seong Rim; Park, Ik Seong; Jo, Kwang Wook

2015-03-01

Patients with middle cerebral artery (MCA) infarction accompanied by MCA occlusion with or without internal carotid artery (ICA) occlusion have a poor prognosis, as a result of brain cell damage caused by both the infarction and by space-occupying and life-threatening edema formation. Multiple treatments can reduce the likelihood of edema formation, but tend to show limited efficacy. Decompressive hemicraniectomy with duroplasty has been promising for improving functional outcomes and reducing mortality, particularly improved functional outcomes can be achieved with early decompressive surgery. Therefore, identifying patients at risk for developing fatal edema is important and should be performed as early as possible. Sixty-four patients diagnosed with major MCA infarction with MCA occlusion within 8 hours of symptom onset were retrospectively reviewed. Early clinical, laboratory, and computed tomography angiography (CTA) parameters were analyzed for malignant brain edema (MBE). Twenty of the 64 patients (31%) had MBE, and the clinical outcome was poor (3month modified Rankin Scale >2) in 95% of them. The National Institutes of Health Stroke Scale (NIHSS) score, Alberta Stroke Program Early Computed Tomography Score, Clot Burden Score, and Collateral Score (CS) showed statically significant differences in both groups. Multivariable analyses adjusted for age and sex identified the independent predictors of MBE: NIHSS score >18 (odds ratio [OR]: 4.4, 95% confidence interval [CI]: 1.2-16.0, p=0.023) and CS on CTA <2 (OR: 7.28, 95% CI: 1.7-30.3,p=0.006). Our results provide useful information for selecting patients in need of aggressive treatment such as decompressive surgery. Crown Copyright © 2014. Published by Elsevier Ltd. All rights reserved.

Experimental arthritis and uveitis in rats associated with Mycobacterium butyricum.

PubMed

Petty, R E; Hunt, D W; Mathers, D M; McCormick, A Q; Barker, H; Southwood, T R; Corson, L

1994-08-01

To determine if the anterior uveitis associated with adjuvant arthritis (AA) in the rat can be passively transferred with arthritis to syngeneic recipients using spleen cells or T cell lines prepared from animals given complete Freund's adjuvant (CFA) and Mycobacterium butyricum (M. butyricum) in incomplete Freund's adjuvant (IFA). Spleen cells from Lewis or Lewis SsN rats given IFA, CFA, type I collagen in IFA (CI-IFA), or type II collagen in IFA (CII-IFA) were administered to naive rats or rats treated with pertussis toxin or bacterial endotoxin. Three CD4+ T cell lines, propagated from CFA injected rats and maintained in vitro with M. butyricum (M-1), bovine proteoglycan (PR-1) or an extract of M. butyricum (MBE-1) were administered to naive or immunosuppressed rats. The arthritogenic and uveitogenic properties of these cell preparations and intradermal MBE-IFA, CII-IFA and intraperitoneal (ip) M. butyricum without adjuvant were evaluated. Uveitis was observed in 15/69 (22%) arthritic rats given CFA. Spleen cells prepared from CFA injected rats caused arthritis in 55 (82%) and uveitis in 2 (3%) of 67 cell recipients. Uveitis occurred in 2/6 cell recipients pretreated with bacterial endotoxin. Neither uveitis nor arthritis was observed in rats given IFA (0/6) or spleen cells prepared from rats given IFA (0/27), CI-IFA (0/6), or CII-IFA (0/28). CII-IFA produced polyarthritis in 5/6 rats, but no uveitis. CII-IFA induced arthritis associated uveitis in 1/15 animals receiving spleen cells from rats given CII-IFA, but not those given CI-IFA (0/3) or IFA (0/13). Uveitis was observed in one recipient of the M-1 T cell line and in 2 recipients of the PR-1 T cell line. Immunization with 400 micrograms of MBE-IFA induced uveitis but not arthritis in 3/11 animals. The MBE specific T cell line was neither arthritogenic nor uveitogenic. A high frequency (5/6) of uveitis accompanied arthritis in male Lewis rats given ip M. butyricum. Arthritis occurred in 4/10 female Lewis

Energy Consumption vs. Energy Requirement

ERIC Educational Resources Information Center

Fan, L. T.; Zhang, Tengyan; Schlup, John R.

2006-01-01

Energy is necessary for any phenomenon to occur or any process to proceed. Nevertheless, energy is never consumed; instead, it is conserved. What is consumed is available energy, or exergy, accompanied by an increase in entropy. Obviously, the terminology, "energy consumption" is indeed a misnomer although it is ubiquitous in the…

A First Course in Mind, Brain, and Education

ERIC Educational Resources Information Center

Blake, Peter R.; Gardner, Howard

2007-01-01

We describe what may well be the first course devoted explicitly to the topic of Mind, Brain, and Education (MBE). In the course, students examine four central topics (literacy, numeracy, emotion/motivation, and conceptual change) through the perspectives of psychology, neuroscience, genetics, and education. We describe the pedagogical tools we…

Density-functional theory computer simulations of CZTS{sub 0.25}Se{sub 0.75} alloy phase diagrams

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chagarov, E.; Sardashti, K.; Kummel, A. C.

2016-08-14

Density-functional theory simulations of CZTS, CZTSe, and CZTS{sub 0.25}Se{sub 0.75} photovoltaic compounds have been performed to investigate the stability of the CZTS{sub 0.25}Se{sub 0.75} alloy vs. decomposition into CZTS, CZTSe, and other secondary compounds. The Gibbs energy for vibrational contributions was estimated by calculating phonon spectra and thermodynamic properties at finite temperatures. It was demonstrated that the CZTS{sub 0.25}Se{sub 0.75} alloy is stabilized not by enthalpy of formation but primarily by the mixing contributions to the Gibbs energy. The Gibbs energy gains/losses for several decomposition reactions were calculated as a function of temperature with/without intermixing and vibration contributions to themore » Gibbs energy. A set of phase diagrams was built in the multidimensional space of chemical potentials at 300 K and 900 K temperatures to demonstrate alloy stability and boundary compounds at various chemical conditions. It demonstrated for CZTS{sub 0.25}Se{sub 0.75} that the chemical potentials for stability differ between typical processing temperature (∼900 K) and operating temperature (300 K). This implies that as cooling progresses, the flux/concentration of S should be increased in MBE growth to maintain the CZTS{sub 0.25}Se{sub 0.75} in a thermodynamically stable state to minimize phase decomposition.« less

Energy efficiency, renewable energy and sustainable development

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ervin, C.A.

1994-12-31

The Office of Energy Efficiency and Renewable Energy (EE) is part of the U.S. Department of Energy that is specifically charged with encouraging the more efficient use of energy resources, and the use of renewable energy resources - such as solar power, wind power, biomass energy and geothermal energy. In the past several years, EE has increased its emphasis on technology deployment through partnerships with states, local governments and private companies. Partnerships move new discoveries more quickly into the marketplace, where they can create jobs, prevent pollution, save resources, and produce many other benefits. The author then emphasizes the importancemore » of this effort in a number of different sections of the paper: energy consumption pervades everything we do; U.S. energy imports are rising to record levels; transportation energy demand is increasing; U.S. energy use is increasing; population growth increases world energy demand; total costs of energy consumption aren`t always counted; world energy markets offer incredible potential; cost of renewables is decreasing; clean energy is essential to sustainable development; sustainable energy policy; sustainable energy initiatives: utilities, buildings, and transportation.« less

Agricultural Energy Practices. Agriculture Energy.

ERIC Educational Resources Information Center

Crank, Ron

This instructional unit is one of 10 developed by students on various energy-related areas that deals specifically with agricultural energy practices. Its objective is for the student to be able to discuss energy use and conservation of resources in the production of agricultural products. Some topics covered are basic uses of direct energy in…

Energy-Water Nexus | Energy Analysis | NREL

Science.gov Websites

Deployment NREL has extensive experience and expertise related to energy-water technology research all along Nexus Energy-Water Nexus Water is required to produce energy. Energy is required to pump, treat , and transport water. The energy-water nexus examines the interactions between these two inextricably

The Energy Crisis and Solar Energy

ERIC Educational Resources Information Center

Bockris, J. O'M.

1974-01-01

Examines the status of the energy crisis in Australia. Outlines energy alternatives for the 1990's and describes the present status of solar energy research and the economics of solar energy systems. (GS)

The Birth of a Field and the Rebirth of the Laboratory School

ERIC Educational Resources Information Center

Schwartz, Marc; Gerlach, Jeanne

2011-01-01

We describe the emergence of a new field, "Mind Brain and Education", dedicated to the science of learning, as well as the roles researchers, policy makers, and educators need to play in developing this collaborative effort. The article highlights the challenges that MBE faces and the strategy researchers and educators in Texas are…

Mind, Brain and Education: A Decade of Evolution

ERIC Educational Resources Information Center

Schwartz, Marc

2015-01-01

This article examines the evolution of Mind, Brain, and Education (MBE), the field, alongside that of the International Mind, Brain and Education Society (IMBES). The reflections stem mostly from my observations while serving as vice president, president-elect, and president of IMBES during the past 10 years. The article highlights the evolution…

Modulation-Doped SrTiO3/SrTi1-xZrxO3 Heterostructures

NASA Astrophysics Data System (ADS)

Kajdos, Adam Paul

Two-dimensional electron gases (2DEGs) in SrTiO3 have attracted considerable attention for exhibiting a variety of interesting physical phenomena, such as superconductivity and magnetism. So far, most of the literature has focused on interfaces between nonpolar SrTiO3 and polar perovskite oxides (e.g. LaAlO3 or rare-earth titanates), where high carrier density 2DEGs (˜3 x 1014 cm-2) are generated by polar discontinuity. Modulation doping is an alternative approach to generating a 2DEG that has been explored extensively in III-V semiconductors but has not heretofore been explored in complex oxides. This approach involves interfacing an undoped semiconductor with a doped semiconductor whose conduction band edge lies at a higher energy, which results in electrons diffusing into the undoped semiconductor transport channel, where scattering from ionized dopants is minimized. Realizing a high-mobility modulation-doped structure with a SrTiO3 transport channel therefore requires both the optimization of the transport channel by minimizing native defects as well as the development of a perovskite oxide which has a suitable band offset with SrTiO3 and can be electron-doped. The growth of high electron mobility SrTiO3 as a suitable transport channel material was previously demonstrated using the hybrid molecular beam epitaxy (MBE) approach, where Sr is delivered via a solid source and Ti is delivered using a metal-organic precursor, titanium (IV) tetra-isopropoxide (TTIP). Expanding on this, in-situ reflection high-energy electron diffraction (RHEED) is used to track the surface and resulting film cation stoichiometry of homoepitaxial SrTiO3 (001) thin films grown by hybrid MBE. It is shown that films with lattice parameters identical to bulk single-crystal substrates within the detection limit of high-resolution X-ray diffraction (XRD) measurements exhibit an evolution in surface reconstruction with increasing TTIP beam-equivalent pressure. The change in the observed

Multi-energy Coordinated Evaluation for Energy Internet

NASA Astrophysics Data System (ADS)

Jia, Dongqiang; Sun, Jian; Wang, Cunping; Hong, Xiao; Ma, Xiufan; Xiong, Wenting; Shen, Yaqi

2017-05-01

This paper reviews the current research status of multi-energy coordinated evaluation for energy Internet. Taking the coordinated optimization effect of wind energy, solar energy and other energy sources into consideration, 17 evaluation indexes, such as the substitution coefficient of cold heat and power, the ratio of wind and solar energy, and the rate of energy storage ratio, were designed from five aspects, including the acceptance of renewable energy, energy complementary alternative benefits, peak valley difference, the degree of equipment utilization and user needs. At the same time, this article attaches importance to the economic and social benefits of the coordination of multiple energy sources. Ultimately, a comprehensive multi-energy coordination evaluation index system of regional energy Internet was put forward from the safe operation, coordination and optimization, economic and social benefits four aspects, and a comprehensive evaluation model was established. This model uses the optimal combination weighting method based on moment estimation and Topsis evaluation analysis method, so both the subjective and objective weight of the index are considered and the coordinate evaluation of multi-energy is realized. Finally the perfection of the index system and the validity of the evaluation method are verified by a case analysis.

Western Energy Corridor -- Energy Resource Report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Leslie Roberts; Michael Hagood

2011-06-01

The world is facing significant growth in energy demand over the next several decades. Strategic in meeting this demand are the world-class energy resources concentrated along the Rocky Mountains and northern plains in Canada and the U.S., informally referred to as the Western Energy Corridor (WEC). The fossil energy resources in this region are rivaled only in a very few places in the world, and the proven uranium reserves are among the world's largest. Also concentrated in this region are renewable resources contributing to wind power, hydro power, bioenergy, geothermal energy, and solar energy. Substantial existing and planned energy infrastructure,more » including refineries, pipelines, electrical transmission lines, and rail lines provide access to these resources.« less

78 FR 13869 - Puget Sound Energy, Inc.; Puget Sound Energy, Inc.; Puget Sound Energy, Inc.; Puget Sound Energy...

Federal Register 2010, 2011, 2012, 2013, 2014

2013-03-01

... Prior Authority During November 2012 AGENCY: Office of Fossil Energy, Department of Energy (DOE). ACTION: Notice of orders. SUMMARY: The Office of Fossil Energy (FE) of the Department of Energy gives notice that... found on the FE Web site at http://www.fossil.energy.gov/programs/gasregulation/authorizations/Orders...

Energy justice and U.S. energy policy: Case study applications exploring U.S. energy policy through an energy justice framework

NASA Astrophysics Data System (ADS)

Prehoda, Emily W.

This thesis presents three examples of U.S. energy policy and demonstrates how these policies violate the principles of energy justice. First, requiring only Federal agencies to obtain a percentage of energy production from renewables violates the distributive energy justice principle through a lack of a federal renewable energy policy which distributes the potential for unequal electrical grid failure to populations. Second, U.S. energy policy violates the procedural energy justice principle through inequitable participation and poor knowledge dissemination that, in some cases, contributes to stagnant renewable targets during the decision-making process and inequitable distribution of the benefits associated with renewable energy arguably resulting from differential representation of economic groups in policy decision making. Third, the United States' continued reliance on and subsidization of fossil fuel extraction and use, violates the prohibitive energy justice principle by causing physical harm to humans and the environment. Finally, a lack of federal renewable energy policy hinders comprehensive energy policy including diversifying the U.S. renewable energy portfolios. Considering energy policy through the framework of energy justice offers a means of evaluating existing policy and can improve future energy policy decision-making. Demanding energy justice ensures that all populations have equitable distribution, participation, and access to affordable, efficient, and clean energy technologies that contribute to obtaining basic needs.

Energy 101: Home Energy Assessment

ScienceCinema

None

2018-05-18

A home energy checkup helps owners determine where their house is losing energy and money - and how such problems can be corrected to make the home more energy efficient. A professional technician - often called an energy auditor - can give your home a checkup. You can also do some of the steps yourself. Items shown here include checking for leaks, examining insulation, inspecting the furnace and ductwork, performing a blower door test and using an infrared camera.

Phase transformation of molecular beam epitaxy-grown nanometer-thick Gd₂O₃ and Y₂O₃ on GaN.

PubMed

Chang, Wen-Hsin; Wu, Shao-Yun; Lee, Chih-Hsun; Lai, Te-Yang; Lee, Yi-Jun; Chang, Pen; Hsu, Chia-Hung; Huang, Tsung-Shiew; Kwo, J Raynien; Hong, Minghwei

2013-02-01

High quality nanometer-thick Gd₂O₃ and Y₂O₃ (rare-earth oxide, R₂O₃) films have been epitaxially grown on GaN (0001) substrate by molecular beam epitaxy (MBE). The R₂O₃ epi-layers exhibit remarkable thermal stability at 1100 °C, uniformity, and highly structural perfection. Structural investigation was carried out by in situ reflection high energy electron diffraction (RHEED) and ex-situ X-ray diffraction (XRD) with synchrotron radiation. In the initial stage of epitaxial growth, the R₂O₃ layers have a hexagonal phase with the epitaxial relationship of R₂O₃ (0001)(H)<1120>(H)//GaN(0001)(H)<1120>(H). With the increase in R₂O₃ film thickness, the structure of the R₂O₃ films changes from single domain hexagonal phase to monoclinic phase with six different rotational domains, following the R₂O₃ (201)(M)[020](M)//GaN(0001)(H)<1120>(H) orientational relationship. The structural details and fingerprints of hexagonal and monoclinic phase Gd₂O₃ films have also been examined by using electron energy loss spectroscopy (EELS). Approximate 3-4 nm is the critical thickness for the structural phase transition depending on the composing rare earth element.

Photoluminescence and contactless electroreflectance characterization of BexCd1-xSe alloys

NASA Astrophysics Data System (ADS)

Huang, P. J.; Huang, Y. S.; Firszt, F.; Meczynska, H.; Maksimov, O.; Tamargo, M. C.; Tiong, K. K.

2007-01-01

A detailed optical characterization of a Bridgman-grown wurtzite- (WZ-) type Be0.075Cd0.925Se mixed crystal and three zinc-blende (ZB) BexCd1-xSe epilayers grown by MBE on InP substrates has been carried out via photoluminescence (PL) and contactless electroreflectance (CER) in the temperature range of 15-400 K. The PL spectrum of the WZ-BeCdSe at low temperature consists of an exciton line, an edge emission feature due to recombination of donor-acceptor pairs, and a broad band related to recombination through deep-level defects, while the PL emission peaks of the ZB-BeCdSe epilayers show an asymmetric shape with a tail on the low-energy side. Various interband transitions, originating from the band edge and spin-orbit splitting critical points, of the samples have been observed in the CER spectra. The peak positions of the exciton emission lines in the PL spectra correspond quite well to the energies of the fundamental transitions determined from electromodulation data. The parameters that describe the temperature dependence of the fundamental and spin split-off bandgaps and the broadening function of the band-edge exciton are evaluated and discussed.

Energy 101: Energy Efficient Commercial Buildings

ScienceCinema

None

2018-06-06

Learn how commercial buildings can incorporate whole-building design to save energy and money while enhancing performance and comfort. This video highlights several energy-saving features of the Research Support Facility at the Energy Department's National Renewable Energy Laboratory-a model for high-performance office building design.

Misconduct, Marginality and Editorial Practices in Management, Business and Economics Journals.

PubMed

Karabag, Solmaz Filiz; Berggren, Christian

2016-01-01

The paper presents data on the two problems of misconduct and marginality in management, business and economics (MBE) journals and their practices to combat these problems. Data was collected in three phases. First, all publicly retracted papers in MBE journals were identified through keywords searches in 7 major databases (n = 1329 journals). Second, a focused survey was distributed to editors involved in such retractions (n = 64; response rate = 28%). Finally, a survey was administered to all active journals in the seven databases to collect data on editors' perceptions and practices related to the two problems (n = 937, response rate = 31.8%). Frequency analyses, cross tabulations, and qualitative analyses of open answers were used to examine the data. 184 retracted papers in MBE journals were identified in 2005-2015 (no retraction was found before 2005). From 2005-2007 to 2012-2015, the number of retractions increased by a factor ten with an all-time high in 2015. The survey to journals with reported retractions illustrates how already a few cases of suspected misconduct put a strain on the editorial workload. The survey to all active journals revealed that 42% of the respondents had started to use software to screen all submitted papers, and that a majority recognized the problem of marginality, as indicated by salami-style submissions. According to some editors, reviewers easily spot such submissions whereas others argued that authors may submit thinly sliced papers in parallel to several journals, which means that this practice is only discovered post-publication. The survey question on ways to support creative contributions stimulated a rich response of ideas regarding editorial vision, engaged boards and developmental approaches. The study uses data from three specialized fields, but its findings may be highly relevant to many journals in the social sciences.

Artifacts for Calibration of Submicron Width Measurements

NASA Technical Reports Server (NTRS)

Grunthaner, Frank; Grunthaner, Paula; Bryson, Charles, III

2003-01-01

Artifacts that are fabricated with the help of molecular-beam epitaxy (MBE) are undergoing development for use as dimensional calibration standards with submicron widths. Such standards are needed for calibrating instruments (principally, scanning electron microscopes and scanning probe microscopes) for measuring the widths of features in advanced integrated circuits. Dimensional calibration standards fabricated by an older process that involves lithography and etching of trenches in (110) surfaces of single-crystal silicon are generally reproducible to within dimensional tolerances of about 15 nm. It is anticipated that when the artifacts of the present type are fully developed, their critical dimensions will be reproducible to within 1 nm. These artifacts are expected to find increasing use in the semiconductor-device and integrated- circuit industries as the width tolerances on semiconductor devices shrink to a few nanometers during the next few years. Unlike in the older process, one does not rely on lithography and etching to define the critical dimensions. Instead, one relies on the inherent smoothness and flatness of MBE layers deposited under controlled conditions and defines the critical dimensions as the thicknesses of such layers. An artifact of the present type is fabricated in two stages (see figure): In the first stage, a multilayer epitaxial wafer is grown on a very flat substrate. In the second stage, the wafer is cleaved to expose the layers, then the exposed layers are differentially etched (taking advantage of large differences between the etch rates of the different epitaxial layer materials). The resulting structure includes narrow and well-defined trenches and a shelf with thicknesses determined by the thicknesses of the epitaxial layers from which they were etched. Eventually, it should be possible to add a third fabrication stage in which durable, electronically inert artifacts could be replicated in diamondlike carbon from a master made by

In situ synchrotron X-ray diffraction study on epitaxial-growth dynamics of III–V semiconductors

NASA Astrophysics Data System (ADS)

Takahasi, Masamitu

2018-05-01

The application of in situ synchrotron X-ray diffraction (XRD) to the molecular-beam epitaxial (MBE) growth of III–V semiconductors is overviewed along with backgrounds of the diffraction theory and instrumentation. X-rays are sensitive not only to the surface of growing films but also to buried interfacial structures because of their large penetration depth. Moreover, a spatial coherence length up to µm order makes X-rays widely applicable to the characterization of low-dimensional structures, such as quantum dots and wires. In situ XRD studies during growth were performed using an X-ray diffractometer, which was combined with an MBE chamber. X-ray reciprocal space mapping at a speed matching a typical growth rate was achieved using intense X-rays available from a synchrotron light source and an area detector. The importance of measuring the three-dimensional distribution of XRD intensity in a reciprocal space map is demonstrated for the MBE growth of two-, one-, and zero-dimensional structures. A large amount of information about the growth process of two-dimensional InGaAs/GaAs(001) epitaxial films has been provided by three-dimensional X-ray reciprocal mappings, including the anisotropic strain relaxation, the compositional inhomogeneity, and the evolution of surface and interfacial roughness. For one-dimensional GaAs nanowires grown in a Au-catalyzed vapor-liquid–solid mode, the relationship between the diameter of the nanowires and the formation of polytypes has been suggested on the basis of in situ XRD measurements. In situ three-dimensional X-ray reciprocal space mapping is also shown to be useful for determining the lateral and vertical sizes of self-assembled InAs/GaAs(001) quantum dots as well as their internal strain distributions during growth.

Misconduct, Marginality and Editorial Practices in Management, Business and Economics Journals

PubMed Central

2016-01-01

Objectives The paper presents data on the two problems of misconduct and marginality in management, business and economics (MBE) journals and their practices to combat these problems. Design Data was collected in three phases. First, all publicly retracted papers in MBE journals were identified through keywords searches in 7 major databases (n = 1329 journals). Second, a focused survey was distributed to editors involved in such retractions (n = 64; response rate = 28%). Finally, a survey was administered to all active journals in the seven databases to collect data on editors’ perceptions and practices related to the two problems (n = 937, response rate = 31.8%). Frequency analyses, cross tabulations, and qualitative analyses of open answers were used to examine the data. Results 184 retracted papers in MBE journals were identified in 2005–2015 (no retraction was found before 2005). From 2005–2007 to 2012–2015, the number of retractions increased by a factor ten with an all-time high in 2015. The survey to journals with reported retractions illustrates how already a few cases of suspected misconduct put a strain on the editorial workload. The survey to all active journals revealed that 42% of the respondents had started to use software to screen all submitted papers, and that a majority recognized the problem of marginality, as indicated by salami-style submissions. According to some editors, reviewers easily spot such submissions whereas others argued that authors may submit thinly sliced papers in parallel to several journals, which means that this practice is only discovered post-publication. The survey question on ways to support creative contributions stimulated a rich response of ideas regarding editorial vision, engaged boards and developmental approaches. The study uses data from three specialized fields, but its findings may be highly relevant to many journals in the social sciences. PMID:27454761

Low energy intake plus low energy expenditure (low energy flux), not energy surfeit, predicts future body fat gain.

PubMed

Hume, David John; Yokum, Sonja; Stice, Eric

2016-06-01

There is a paucity of studies that have prospectively tested the energy surfeit theory of obesity with the use of objectively estimated energy intake and energy expenditure in humans. An alternative theory is that homeostatic regulation of body weight is more effective when energy intake and expenditure are both high (high energy flux), implying that low energy flux should predict weight gain. We aimed to examine the predictive relations of energy balance and energy flux to future weight gain and tested whether results were replicable in 2 independent samples. Adolescents (n = 154) and college-aged women (n = 75) underwent 2-wk objective doubly labeled water, resting metabolic rate, and percentage of body fat measures at baseline. Percentage of body fat was measured annually for 3 y of follow-up for the adolescent sample and for 2 y of follow-up for the young adult sample. Low energy flux, but not energy surfeit, predicted future increases in body fat in both studies. Furthermore, high energy flux appeared to prevent fat gain in part because it was associated with a higher resting metabolic rate. Counter to the energy surfeit model of obesity, results suggest that increasing energy expenditure may be more effective for reducing body fat than caloric restriction, which is currently the treatment of choice for obesity. This trial was registered at clinicaltrials.gov as NCT02084836. © 2016 American Society for Nutrition.

Energy: A continuing bibliography with indexes, February 1975. [solar energy, energy conversion

NASA Technical Reports Server (NTRS)

1975-01-01

Reports, articles, and other documents introduced into the NASA scientific and technical information system from July 1, 1974 through September 30, 1974 are cited. Regional, national, and international energy systems; research and development on fuels and other sources of energy; energy conversion, transport, transmission, distribution, and storage, with emphasis on the use of hydrogen and solar energy are included along with methods of locating or using new energy resources. Emphasis is placed on energy for heating, lighting, and powering aircraft, surface vehicles, or other machinery.

An Energy Integrated Dispatching Strategy of Multi- energy Based on Energy Internet

NASA Astrophysics Data System (ADS)

Jin, Weixia; Han, Jun

2018-01-01

Energy internet is a new way of energy use. Energy internet achieves energy efficiency and low cost by scheduling a variety of different forms of energy. Particle Swarm Optimization (PSO) is an advanced algorithm with few parameters, high computational precision and fast convergence speed. By improving the parameters ω, c1 and c2, PSO can improve the convergence speed and calculation accuracy. The objective of optimizing model is lowest cost of fuel, which can meet the load of electricity, heat and cold after all the renewable energy is received. Due to the different energy structure and price in different regions, the optimization strategy needs to be determined according to the algorithm and model.

Ex situ n+ doping of GeSn alloys via non-equilibrium processing

NASA Astrophysics Data System (ADS)

Prucnal, S.; Berencén, Y.; Wang, M.; Rebohle, L.; Böttger, R.; Fischer, I. A.; Augel, L.; Oehme, M.; Schulze, J.; Voelskow, M.; Helm, M.; Skorupa, W.; Zhou, S.

2018-06-01

Full integration of Ge-based alloys like GeSn with complementary-metal-oxide-semiconductor technology would require the fabrication of p- and n-type doped regions for both planar and tri-dimensional device architectures which is challenging using in situ doping techniques. In this work, we report on the influence of ex situ doping on the structural, electrical and optical properties of GeSn alloys. n-type doping is realized by P implantation into GeSn alloy layers grown by molecular beam epitaxy (MBE) followed by flash lamp annealing. We show that effective carrier concentration of up to 1 × 1019 cm‑3 can be achieved without affecting the Sn distribution. Sn segregation at the surface accompanied with an Sn diffusion towards the crystalline/amorphous GeSn interface is found at P fluences higher than 3 × 1015 cm‑2 and electron concentration of about 4 × 1019 cm‑3. The optical and structural properties of ion-implanted GeSn layers are comparable with the in situ doped MBE grown layers.

Topological insulator film growth by molecular beam epitaxy: A review

DOE PAGES

Ginley, Theresa P.; Wang, Yong; Law, Stephanie

2016-11-23

In this article, we will review recent progress in the growth of topological insulator (TI) thin films by molecular beam epitaxy (MBE). The materials we focus on are the V 2-VI 3 family of TIs. These materials are ideally bulk insulating with surface states housing Dirac excitations which are spin-momentum locked. These surface states are interesting for fundamental physics studies (such as the search for Majorana fermions) as well as applications in spintronics and other fields. However, the majority of TI films and bulk crystals exhibit significant bulk conductivity, which obscures these states. In addition, many TI films have amore » high defect density. This review will discuss progress in reducing the bulk conductivity while increasing the crystal quality. We will describe in detail how growth parameters, substrate choice, and growth technique influence the resulting TI film properties for binary and ternary TIs. We then give an overview of progress in the growth of TI heterostructures. Furthermore, we close by discussing the bright future for TI film growth by MBE.« less

Growth condition dependence of photoluminescence polarization in (100) GaAs/AlGaAs quantum wells at room temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Iba, Satoshi; Saito, Hidekazu; Yuasa, Shinji

2015-08-28

We conducted systematic measurements on the carrier lifetime (τ{sub c}), spin relaxation time (τ{sub s}), and circular polarization of photoluminescence (P{sub circ}) in (100) GaAs/AlGaAs multiple quantum wells grown by molecular beam epitaxy (MBE). The τ{sub c} values are strongly affected by MBE growth conditions (0.4–9 ns), whereas the τ{sub s} are almost constant at about 0.13 ns. The result suggests that spin detection efficiency [τ{sub s}/(τ{sub c} + τ{sub s})], which is expected to be proportional to a steady-state P{sub circ}, is largely dependent on growth condition. We confirmed that the P{sub circ} has similar dependence on growth condition to those of τ{submore » s}/(τ{sub c} + τ{sub s}) values. The study thus indicates that choosing the appropriate growth condition of the QW is indispensable for obtaining a high P{sub circ} from a spin-polarized light-emitting diode (spin-LED)« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ginley, Theresa P.; Wang, Yong; Law, Stephanie

In this article, we will review recent progress in the growth of topological insulator (TI) thin films by molecular beam epitaxy (MBE). The materials we focus on are the V 2-VI 3 family of TIs. These materials are ideally bulk insulating with surface states housing Dirac excitations which are spin-momentum locked. These surface states are interesting for fundamental physics studies (such as the search for Majorana fermions) as well as applications in spintronics and other fields. However, the majority of TI films and bulk crystals exhibit significant bulk conductivity, which obscures these states. In addition, many TI films have amore » high defect density. This review will discuss progress in reducing the bulk conductivity while increasing the crystal quality. We will describe in detail how growth parameters, substrate choice, and growth technique influence the resulting TI film properties for binary and ternary TIs. We then give an overview of progress in the growth of TI heterostructures. Furthermore, we close by discussing the bright future for TI film growth by MBE.« less

High-efficiency photovoltaic cells

DOEpatents

Yang, H.T.; Zehr, S.W.

1982-06-21

High efficiency solar converters comprised of a two cell, non-lattice matched, monolithic stacked semiconductor configuration using optimum pairs of cells having bandgaps in the range 1.6 to 1.7 eV and 0.95 to 1.1 eV, and a method of fabrication thereof, are disclosed. The high band gap subcells are fabricated using metal organic chemical vapor deposition (MOCVD), liquid phase epitaxy (LPE) or molecular beam epitaxy (MBE) to produce the required AlGaAs layers of optimized composition, thickness and doping to produce high performance, heteroface homojunction devices. The low bandgap subcells are similarly fabricated from AlGa(As)Sb compositions by LPE, MBE or MOCVD. These subcells are then coupled to form a monolithic structure by an appropriate bonding technique which also forms the required transparent intercell ohmic contact (IOC) between the two subcells. Improved ohmic contacts to the high bandgap semiconductor structure can be formed by vacuum evaporating to suitable metal or semiconductor materials which react during laser annealing to form a low bandgap semiconductor which provides a low contact resistance structure.

Cyclotron resonance in ferromagnetic InMnAs and InMnSb

NASA Astrophysics Data System (ADS)

Khodaparast, G. A.; Matsuda, Y. H.; Saha, D.; Sanders, G. D.; Stanton, C. J.; Saito, H.; Takeyama, S.; Merritt, T. R.; Feeser, C.; Wessels, B. W.; Liu, X.; Furdyna, J.

2013-12-01

We present experimental and theoretical studies of the magneto-optical properties of p-type In1-xMnxAs and In1-xMnxSb ferromagnetic semiconductor films in ultrahigh magnetic fields oriented along [001]. Samples were fabricated by molecular beam epitaxy (MBE) and metal-organic vapor phase epitaxy (MOVPE). To model the results, we used an 8-band Pidgeon-Brown model generalized to include the wave vector dependence of the elec-tronic states along kz as well as the s-d and p-d exchange interactions with the localized Mn d electrons. The Curie temperature is taken as an input parameter and the average Mn spin is treated in mean-field theory. We compared Landau level and band structure calculations with observed cyclotron resonance (CR) measurements. While differences between the CR measurements are seen for MBE and MOVPE samples, our calculations indicate that they arise from differences in the carrier densities. In addition, the difference in the carrier densities suggests significantly larger average spin for the MOVPE structures; this fact could be responsible for higher Curie temperatures in this material system.

Method of fabricating germanium and gallium arsenide devices

NASA Technical Reports Server (NTRS)

Jhabvala, Murzban (Inventor)

1990-01-01

A method of semiconductor diode fabrication is disclosed which relies on the epitaxial growth of a precisely doped thickness layer of gallium arsenide or germanium on a semi-insulating or intrinsic substrate, respectively, of gallium arsenide or germanium by either molecular beam epitaxy (MBE) or by metal-organic chemical vapor deposition (MOCVD). The method involves: depositing a layer of doped or undoped silicon dioxide on a germanium or gallium arsenide wafer or substrate, selectively removing the silicon dioxide layer to define one or more surface regions for a device to be fabricated thereon, growing a matched epitaxial layer of doped germanium or gallium arsenide of an appropriate thickness using MBE or MOCVD techniques on both the silicon dioxide layer and the defined one or more regions; and etching the silicon dioxide and the epitaxial material on top of the silicon dioxide to leave a matched epitaxial layer of germanium or gallium arsenide on the germanium or gallium arsenide substrate, respectively, and upon which a field effect device can thereafter be formed.

Expanding the chemical diversity of natural esters by engineering a polyketide-derived pathway into Escherichia coli.

PubMed

Menendez-Bravo, Simón; Comba, Santiago; Sabatini, Martín; Arabolaza, Ana; Gramajo, Hugo

2014-07-01

Microbial fatty acid (FA)-derived molecules have emerged as promising alternatives to petroleum-based chemicals for reducing dependence on fossil hydrocarbons. However, native FA biosynthetic pathways often yield limited structural diversity, and therefore restricted physicochemical properties, of the end products by providing only a limited variety of usually linear hydrocarbons. Here we have engineered into Escherichia coli a mycocerosic polyketide synthase-based biosynthetic pathway from Mycobacterium tuberculosis and redefined its biological role towards the production of multi-methyl-branched-esters (MBEs) with novel chemical structures. Expression of FadD28, Mas and PapA5 enzymes enabled the biosynthesis of multi-methyl-branched-FA and their further esterification to an alcohol. The high substrate tolerance of these enzymes towards different FA and alcohol moieties resulted in the biosynthesis of a broad range of MBE. Further metabolic engineering of the MBE producer strain coupled this system to long-chain-alcohol biosynthetic pathways resulting in de novo production of branched wax esters following addition of only propionate. Copyright © 2014 International Metabolic Engineering Society. Published by Elsevier Inc. All rights reserved.

Optimization of the defects and the nonradiative lifetime of GaAs/AlGaAs double heterostructures

NASA Astrophysics Data System (ADS)

Cevher, Z.; Folkes, P. A.; Hier, H. S.; VanMil, B. L.; Connelly, B. C.; Beck, W. A.; Ren, Y. H.

2018-04-01

We used Raman scattering and time-resolved photoluminescence spectroscopy to investigate the molecular-beam-epitaxy (MBE) growth parameters that optimize the structural defects and therefore the internal radiative quantum efficiency of MBE-grown GaAs/AlGaAs double heterostructures (DH). The DH structures were grown at two different temperatures and three different As/Ga flux ratios to determine the conditions for an optimized structure with the longest nonradiative minority carrier lifetime. Raman scattering measurements show an improvement in the lattice disorder in the AlGaAs and GaAs layers as the As/Ga flux ratio is reduced from 40 to 15 and as the growth temperature is increased from 550 to 595 °C. The optimized structure is obtained with the As/Ga flux ratio equal to 15 and the substrate temperature 595 °C. This is consistent with the fact that the optimized structure has the longest minority carrier lifetime. Moreover, our Raman studies reveal that incorporation of a distributed Bragg reflector layer between the substrate and DH structures significantly reduces the defect density in the subsequent epitaxial layers.

Pure AlN layers in metal-polar AlGaN/AlN/GaN and AlN/GaN heterostructures grown by low-temperature ammonia-based molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Kaun, Stephen W.; Mazumder, Baishakhi; Fireman, Micha N.; Kyle, Erin C. H.; Mishra, Umesh K.; Speck, James S.

2015-05-01

When grown at a high temperature (820 °C) by ammonia-based molecular beam epitaxy (NH3-MBE), the AlN layers of metal-polar AlGaN/AlN/GaN heterostructures had a high GaN mole fraction (∼0.15), as identified by atom probe tomography in a previous study (Mazumder et al 2013 Appl. Phys. Lett. 102 111603). In the study presented here, growth at low temperature (<740 °C) by NH3-MBE yielded metal-polar AlN layers that were essentially pure at the alloy level. The improved purity of the AlN layers grown at low temperature was correlated to a dramatic increase in the sheet density of the two-dimensional electron gas (2DEG) at the AlN/GaN heterointerface. Through application of an In surfactant, metal-polar AlN(3.5 nm)/GaN and AlGaN/AlN(2.5 nm)/GaN heterostructures grown at low temperature yielded low 2DEG sheet resistances of 177 and 285 Ω/□, respectively.

Effect of defects on reaction of NiO surface with Pb-contained solution

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Jongjin; Hou, Binyang; Park, Changyong

In order to understand the role of defects in chemical reactions, we used two types of samples, which are molecular beam epitaxy (MBE) grown NiO(001) film on Mg(001) substrate as the defect free NiO prototype and NiO grown on Ni(110) single crystal as the one with defects. In-situ observations for oxide-liquid interfacial structure and surface morphology were performed for both samples in water and Pb-contained solution using high-resolution X-ray reflectivity and atomic force microscopy. For the MBE grown NiO, no significant changes were detected in the high-resolution X-ray reflectivity data with monotonic increase in roughness. Meanwhile, in the case ofmore » native grown NiO on Ni(110), significant changes in both the morphology and atomistic structure at the interface were observed when immersed in water and Pb-contained solution. Our results provide simple and direct experimental evidence of the role of the defects in chemical reaction of oxide surfaces with both water and Pb-contained solution.« less

Highly Oriented Atomically Thin Ambipolar MoSe2 Grown by Molecular Beam Epitaxy

PubMed Central

2017-01-01

Transition metal dichalcogenides (TMDCs), together with other two-dimensional (2D) materials, have attracted great interest due to the unique optical and electrical properties of atomically thin layers. In order to fulfill their potential, developing large-area growth and understanding the properties of TMDCs have become crucial. Here, we have used molecular beam epitaxy (MBE) to grow atomically thin MoSe2 on GaAs(111)B. No intermediate compounds were detected at the interface of as-grown films. Careful optimization of the growth temperature can result in the growth of highly aligned films with only two possible crystalline orientations due to broken inversion symmetry. As-grown films can be transferred onto insulating substrates, allowing their optical and electrical properties to be probed. By using polymer electrolyte gating, we have achieved ambipolar transport in MBE-grown MoSe2. The temperature-dependent transport characteristics can be explained by the 2D variable-range hopping (2D-VRH) model, indicating that the transport is strongly limited by the disorder in the film. PMID:28530829

Visible-light vertical-cavity surface-emitting lasers grown by solid-source molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Saarinen, Mika J.; Xiang, Ning; Dumitrescu, Mihail M.; Vilokkinen, Ville; Melanen, Petri; Orsila, Seppo; Uusimaa, Petteri; Savolainen, Pekka; Pessa, Markus

2001-05-01

Visible vertical-cavity surface-emitting lasers (VCSELs) are potential light sources for polymer optical fibre (POF) data transmission systems. Minimum attenuation of light in standard PMMA-POFs occurs at about 650 nm. For POFs of a few tens of meters in length VCSELs at slightly longer wavelengths (670 - 690 nm) are also acceptable. So far, the visible VCSELs have been grown by metal organic chemical vapour deposition (MOCVD). They may also be grown by a novel variant of molecular beam epitaxy (MBE), a so-called all-solid-source MBE or SSMBE. In this paper, we describe growth of the first visible-light VCSELs by SSMBE and present the main results obtained. In particular, we have achieved lasing action at a sub-milliamp cw drive current for a VCSEL having the emission window of 8um in diameter, while a 10um device exhibited an external quantum efficiency of 6.65% in CW operation at room temperature. The lasing action up to temperature of 45°C has been demonstrated.

Energy.

PubMed

Chambers, David W

2012-01-01

Energy is the capacity to do the things we are capable of and desire to accomplish. Most often this is thought of in terms of PEP--personal energy potential--a reservoir of individual vivacity and zest for work. Like a battery, energy can be conceived of as a resource that is alternatively used and replenished. Transitions between activities, variety of tasks, and choices of what to spend energy on are part of energy management. Energy capacity can be thought of at four levels: (a) so little that harm is caused and extraordinary steps are needed for recovery, (b) a deficit that slightly impairs performance but will recover naturally, (c) the typical range of functioning, and (d) a surplus that may or may not be useful and requires continual investment to maintain. "Flow" is the experience of optimal energy use when challenges balance capacity as a result of imposing order on our environment. There are other energy resources in addition to personal vim. Effective work design reduces demands on energy. Money, office design, and knowledge are excellent substitutes for personal energy.

In Situ STM Observation of Nonmagnetic Impurity Effect in MBE-grown CeCoIn5 Films

NASA Astrophysics Data System (ADS)

Haze, Masahiro; Torii, Yohei; Peters, Robert; Kasahara, Shigeru; Kasahara, Yuichi; Shibauchi, Takasada; Terashima, Takahito; Matsuda, Yuji

2018-03-01

Local electronic effects in the vicinity of an impurity provide pivotal insight into the origin of unconventional superconductivity, especially when the materials are located on the edge of magnetic instability. In high-temperature cuprate superconductors, a strong suppression of superconductivity and appearance of low-energy bound states are clearly observed near nonmagnetic impurities. However, whether these features are common to other strongly correlated superconductors has not been established experimentally. Here, we report the in situ scanning tunneling microscopy observation of electronic structure around a nonmagnetic Zn impurity in heavy-fermion CeCo(In1-xZnx)5 films, which are epitaxially grown by the state-of-the-art molecular beam epitaxy technique. The films have very wide atomically flat terraces and Zn atoms residing on two different In sites are clearly resolved. Remarkably, no discernible change is observed for the superconducting gap at and around the Zn atoms. Moreover, the local density of states around Zn atoms shows little change inside the c-f hybridization gap, which is consistent with calculations for a periodic Anderson model without local magnetic order. These results indicate that no nonsuperconducting region is induced around a Zn impurity and do not support the scenario of antiferromagnetic droplet formation suggested by indirect measurements in Cd-doped CeCoIn5. These results also highlight a significant difference of the impurity effect between cuprates and CeCoIn5, in both of which d-wave superconductivity arises from the non-Fermi liquid normal state near antiferromagnetic instabilities.

Energy Audits. Energy Technology Series.

ERIC Educational Resources Information Center

Center for Occupational Research and Development, Inc., Waco, TX.

This course in energy audits is one of 16 courses in the Energy Technology Series developed for an Energy Conservation-and-Use Technology curriculum. Intended for use in two-year postsecondary technical institutions to prepare technicians for employment, the courses are also useful in industry for updating employees in company-sponsored training…

On local pairs vs. BCS: Quo vadis high-T c superconductivity

DOE PAGES

Pavuna, D.; Dubuis, G.; Bollinger, A. T.; ...

2016-07-28

Since the discovery of high-temperature superconductivity in cuprates, proposals have been made that pairing may be local, in particular in underdoped samples. Furthermore, we briefly review evidence for local pairs from our experiments on thin films of La 2–xSr xCuO 4, synthesized by atomic layer-by-layer molecular beam epitaxy (ALL-MBE).

An Education Grounded in Biology: Interdisciplinary and Ethical Considerations

ERIC Educational Resources Information Center

Gardner, Howard

2009-01-01

Work in the new area of Mind, Brain, and Education (MBE) raises epistemological and ethical issues. With respect to epistemology, the norms of the component disciplines must be honored and the resulting amalgam must be more than a mere sum of the parts. With respect to ethics, the roles of scientist, educator, and practitioner each raise ethical…

Model-Based Engineering for Supply Chain Risk Management

DTIC Science & Technology

2015-09-30

Privacy, 2009 [19] Julien Delange Wheel Brake System Example using AADL; Feiler, Peter; Hansson, Jörgen; de Niz, Dionisio; & Wrage, Lutz. System ...University Software Engineering Institute Abstract—Expanded use of commercial components has increased the complexity of system assurance...verification. Model- based engineering (MBE) offers a means to design, develop, analyze, and maintain a complex system architecture. Architecture Analysis

Materials Physics | Materials Science | NREL

Science.gov Websites

capabilities in this area. Electronic Raman scattering as an ultra-sensitive probe of strain effects in research capabilities in this area. Effects of incident UV light on surface morphology of MBE grown GaAs example, we seek to predict the effects of soiling for different environmental conditions. We are working

AADL and Model-based Engineering

DTIC Science & Technology

2014-10-20

and MBE Feiler, Oct 20, 2014 © 2014 Carnegie Mellon University We Rely on Software for Safe Aircraft Operation Embedded software systems ...D eveloper Compute Platform Runtime Architecture Application Software Embedded SW System Engineer Data Stream Characteristics Latency...confusion Hardware Engineer Why do system level failures still occur despite fault tolerance techniques being deployed in systems ? Embedded software

Aaron Ptak | NREL

Science.gov Websites

doping of III-Nitride materials grown by molecular beam epitaxy (MBE). He joined NREL after graduation in (0001) GaN Growth by Radio Frequency Plasma-Assisted Molecular Beam Epitaxy, A.J. Ptak, M.R. Millecchia . Phys. Lett. 77, 2479 (2000). Magnesium Incorporation in GaN Grown by rf-Plasma Assisted Molecular Beam

Group Blogs as Toolkits to Support Learning Environments in Statistics Subject: A Qualitative Case Study

ERIC Educational Resources Information Center

Hashim, Mohamad Hisyam Mohd

2012-01-01

In this paper, we describe the introduction of blogs to a class of Masters in Technical and Vocational Education students taking the MBE 1223 Statistics in Education module in Universiti Tun Hussein Onn Malaysia (UTHM). The purpose of the analysis is to elaborate on the perception of the participants towards blogs before, during and after training…

Spatial Light Modulators with Arbitrary Quantum Well Profiles

DTIC Science & Technology

1991-01-14

vertical cavity surface emitting lasers ( VCSEL ) is also...aDlications stemming from the research effort. An application of the MBE compositional grading technique to vertical cavity surface emitting lasers was described in section 2e. G. Other statements ... cavity surface emitting laser ( VCSEL ). This uses compositionally graded Bragg reflectors to reduce the electrical resistance of the mirrors

Optical Characterization of IV-VI Mid-Infrared VCSEL

DTIC Science & Technology

2002-01-01

vertical cavity surface emitting laser ( VCSEL ). A power...il quantum well (QW) devices [5], there has little progress until recently in developing mid-IR vertical cavity surface emitting laser ( VCSEL ). This...structures and PbSrSe thin films were grown on Bat; (111) substrates by molecular beam epitaxy ( MBE ) and characterized by Fourier transform infi-ared

Low energy intake plus low energy expenditure (low energy flux), not energy surfeit, predicts future body fat gain12

PubMed Central

Yokum, Sonja; Stice, Eric

2016-01-01

Background: There is a paucity of studies that have prospectively tested the energy surfeit theory of obesity with the use of objectively estimated energy intake and energy expenditure in humans. An alternative theory is that homeostatic regulation of body weight is more effective when energy intake and expenditure are both high (high energy flux), implying that low energy flux should predict weight gain. Objective: We aimed to examine the predictive relations of energy balance and energy flux to future weight gain and tested whether results were replicable in 2 independent samples. Design: Adolescents (n = 154) and college-aged women (n = 75) underwent 2-wk objective doubly labeled water, resting metabolic rate, and percentage of body fat measures at baseline. Percentage of body fat was measured annually for 3 y of follow-up for the adolescent sample and for 2 y of follow-up for the young adult sample. Results: Low energy flux, but not energy surfeit, predicted future increases in body fat in both studies. Furthermore, high energy flux appeared to prevent fat gain in part because it was associated with a higher resting metabolic rate. Conclusion: Counter to the energy surfeit model of obesity, results suggest that increasing energy expenditure may be more effective for reducing body fat than caloric restriction, which is currently the treatment of choice for obesity. This trial was registered at clinicaltrials.gov as NCT02084836. PMID:27169833

From Zero Energy Buildings to Zero Energy Districts

DOE Office of Scientific and Technical Information (OSTI.GOV)

Polly, Ben; Kutscher, Chuck; Macumber, Dan

Some U.S. cities are planning advanced districts that have goals for zero energy, water, waste, and/or greenhouse gas emissions. From an energy perspective, zero energy districts present unique opportunities to cost-effectively achieve high levels of energy efficiency and renewable energy penetration across a collection of buildings that may be infeasible at the individual building scale. These high levels of performance are accomplished through district energy systems that harness renewable and wasted energy at large scales and flexible building loads that coordinate with variable renewable energy supply. Unfortunately, stakeholders face a lack of documented processes, tools, and best practices to assistmore » them in achieving zero energy districts. The National Renewable Energy Laboratory (NREL) is partnering on two new district projects in Denver: the National Western Center and the Sun Valley Neighborhood. We are working closely with project stakeholders in their zero energy master planning efforts to develop the resources needed to resolve barriers and create replicable processes to support future zero energy district efforts across the United States. Initial results of these efforts include the identification and description of key zero energy district design principles (maximizing building efficiency, solar potential, renewable thermal energy, and load control), economic drivers, and master planning principles. The work has also resulted in NREL making initial enhancements to the U.S. Department of Energy's open source building energy modeling platform (OpenStudio and EnergyPlus) with the long-term goal of supporting the design and optimization of energy districts.« less

Alternative Energy Development and China's Energy Future

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zheng, Nina; Fridley, David

2011-06-15

In addition to promoting energy efficiency, China has actively pursued alternative energy development as a strategy to reduce its energy demand and carbon emissions. One area of particular focus has been to raise the share of alternative energy in China’s rapidly growing electricity generation with a 2020 target of 15% share of total primary energy. Over the last ten years, China has established several major renewable energy regulations along with programs and subsidies to encourage the growth of non-fossil alternative energy including solar, wind, nuclear, hydro, geothermal and biomass power as well as biofuels and coal alternatives. This study thusmore » seeks to examine China’s alternative energy in terms of what has and will continue to drive alternative energy development in China as well as analyze in depth the growth potential and challenges facing each specific technology. This study found that despite recent policies enabling extraordinary capacity and investment growth, alternative energy technologies face constraints and barriers to growth. For relatively new technologies that have not achieved commercialization such as concentrated solar thermal, geothermal and biomass power, China faces technological limitations to expanding the scale of installed capacity. While some alternative technologies such as hydropower and coal alternatives have been slowed by uneven and often changing market and policy support, others such as wind and solar PV have encountered physical and institutional barriers to grid integration. Lastly, all alternative energy technologies face constraints in human resources and raw material resources including land and water, with some facing supply limitations in critical elements such as uranium for nuclear, neodymium for wind and rare earth metals for advanced solar PV. In light of China’s potential for and barriers to growth, the resource and energy requirement for alternative energy technologies were modeled and scenario

Energy 101: Energy Efficient Data Centers

ScienceCinema

None

2018-04-16

Data centers provide mission-critical computing functions vital to the daily operation of top U.S. economic, scientific, and technological organizations. These data centers consume large amounts of energy to run and maintain their computer systems, servers, and associated high-performance components—up to 3% of all U.S. electricity powers data centers. And as more information comes online, data centers will consume even more energy. Data centers can become more energy efficient by incorporating features like power-saving "stand-by" modes, energy monitoring software, and efficient cooling systems instead of energy-intensive air conditioners. These and other efficiency improvements to data centers can produce significant energy savings, reduce the load on the electric grid, and help protect the nation by increasing the reliability of critical computer operations.

Aqueous solution epitaxy of CdS layers on CuInSe 2

NASA Astrophysics Data System (ADS)

Furlong, M. J.; Froment, M.; Bernard, M. C.; Cortès, R.; Tiwari, A. N.; Krejci, M.; Zogg, H.; Lincot, D.

1998-09-01

Epitaxial CdS thin films have been deposited from an aqueous ammonia solution containing cadmium ions and thiourea as precursors on single crystalline CuInSe 2 films prepared by MBE on Si(1 1 1) and GaAs(1 0 0) substrates. The structure and quality of the films were investigated by RHEED, glancing angle XRD and HRTEM in cross-section. The films are cubic on (1 0 0) substrates, and mixed cubic and hexagonal on (1 1 1) substrates due to the presence of stacking faults parallel to the substrate. The growth is under surface kinetic control with an activation energy of 85 kJ mol -1. Epitaxy improves with increasing temperature and an epitaxial transition temperature at approx. 60°C is demonstrated in the selected experimental conditions. The epitaxy is very sensitive to the preparation of the surface. Beneficial effects of in situ or ex situ chemical etching are found. Similarities between aqueous solution and vapor-phase chemical depositions are pointed out.

An empirical model for estimating solar radiation in the Algerian Sahara

NASA Astrophysics Data System (ADS)

Benatiallah, Djelloul; Benatiallah, Ali; Bouchouicha, Kada; Hamouda, Messaoud; Nasri, Bahous

2018-05-01

The present work aims to determine the empirical model R.sun that will allow us to evaluate the solar radiation flues on a horizontal plane and in clear-sky on the located Adrar city (27°18 N and 0°11 W) of Algeria and compare with the results measured at the localized site. The expected results of this comparison are of importance for the investment study of solar systems (solar power plants for electricity production, CSP) and also for the design and performance analysis of any system using the solar energy. Statistical indicators used to evaluate the accuracy of the model where the mean bias error (MBE), root mean square error (RMSE) and coefficient of determination. The results show that for global radiation, the daily correlation coefficient is 0.9984. The mean absolute percentage error is 9.44 %. The daily mean bias error is -7.94 %. The daily root mean square error is 12.31 %.

The effect of FeF2 on the magneto-optic response in FeF2/Fe/FeF2 sandwiches

NASA Astrophysics Data System (ADS)

Pištora, J.; Lesňák, M.; Lišková, E.; Višňovský, Š.; Harward, I.; Maslankiewicz, P.; Balin, K.; Celinski, Z.; Mistrík, J.; Yamaguchi, T.; Lopusnik, R.; Vlček, J.

2010-04-01

The room temperature optical constants n and k of MBE grown FeF2 films are reported. Because of poor chemical stability, FeF2 had to be coated with a protective Au layer. Reflection spectral ellipsometry in the photon energy range between 1.3 and 5.2 eV was performed on structures with a typical profile Au(0.5 nm)/FeF2(120 nm)/Au(30 nm)/Ag(20 nm)/Fe(0.6 nm) grown on GaAs(0 0 1) substrate. The spectra of n and k in FeF2 were subsequently employed in the design of FeF2/Fe/FeF2 sandwiches considered as magneto-optic (MO) sensors for weak microwave currents. Their MO response was evaluated using reflection MO (Kerr) spectroscopy at polar magnetization. The present results may be of interest in MO studies of magnetic nanostructures with Fe/FeF2/Fe, including MO magnetometry and MO magnetic domain imaging.

The PNC-CAT insertion device beamline at the Advanced Photon Source

NASA Astrophysics Data System (ADS)

Heald, S. M.; Stern, E. A.; Brown, F. C.; Kim, K. H.; Barg, B.; Crozier, E. D.

1996-09-01

The PNC-CAT is a consortium of Pacific Northwest institutions formed to instrument a sector (number 20) at the Advanced Photon Source (APS). Research is planned in a variety of areas, with an emphasis on environmentally based problems. The insertion device beamline is based on the APS undulator A and will be optimized for producing microbeams as well as for applications requiring energy scanning capabilities. This paper describes the basic layout and some special features of the beamline. Two experimental stations are planned: one general purpose and one dedicated to MBE and surface science problems. Both tapered capillaries and Kirkpatrick-Baez optics will be used for producing microbeams, and a large optical bench is planned for the main station to allow for easy accommodation of new optics developments. Design calculations and initial capillary tests indicate that flux densities exceeding 1011 photons/sec/mm2 should be achievable. All major components are under construction or in procurement, and initial testing is planned for late 1996.

Photoluminescence Investigation of p-type GaAs/AlGaAs Quantum Well Infrared Detectors(QWIPs) Designed for Normal Incidence Detection in the 10 micron region.

NASA Astrophysics Data System (ADS)

Hegde, S. M.; Brown, Gail J.; Capano, Michael; Eyink, Kurt

1997-03-01

We have investigated MBE grown p-type, GaAs/AlGaAs QWIPs by photoluminescence spectroscopy. Excitation intensity, and temperature dependent photoluminescence spectra from 4.5K to 295K were studied. The PL-spectra were fitted with multiple gaussians to extract information on inter-subband (c1-hh1) peak loactions, full width at half maximum(FWHM), intensity and integrated intensity. A detailed analysis of the origin of the observed peaks and their thermal actiavtion energies was carried out. X-ray diffraction measurements were used to confirm the high qualiuty of the grown MQW structures and the Al-composition in the AlGaAs barriers. Temperature dependent photoconductivity measurements were used to measure the relative photoresponse from the hh1-to-continuum states in the valence subband transitions of these detector structures in the 10 micron region. It is found that high photoluminescence efficiency for the intersubband free-to-free transition at higher temperatures correl! ates with good photoresponse at th ose higher temperatures.

Role of Arsenic During Aluminum Droplet Etching of Nanoholes in AlGaAs

NASA Astrophysics Data System (ADS)

Heyn, Christian; Zocher, Michel; Schnüll, Sandra; Hansen, Wolfgang

2016-09-01

Self-assembled nanoholes are drilled into (001) AlGaAs surfaces during molecular beam epitaxy (MBE) using local droplet etching (LDE) with Al droplets. It is known that this process requires a small amount of background arsenic for droplet material removal. The present work demonstrates that the As background can be supplied by both a small As flux to the surface as well as by the topmost As layer in an As-terminated surface reconstruction acting as a reservoir. We study the temperature-dependent evaporation of the As topmost layer with in situ electron diffraction and determine an activation energy of 2.49 eV. After thermal removal of the As topmost layer droplet etching is studied under well-defined As supply. We observe with decreasing As flux four regimes: planar growth, uniform nanoholes, non-uniform holes, and droplet conservation. The influence of the As supply is discussed quantitatively on the basis of a kinetic rate model.

Effect of indium droplets on growth of InGaN film by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Zheng, Xiantong; Liang, Hongwei; Wang, Ping; Sun, Xiaoxiao; Chen, Zhaoying; Wang, Tao; Sheng, Bowen; Wang, Yixin; Chen, Ling; Wang, Ding; Rong, Xin; Li, Mo; Zhang, Jian; Wang, Xinqiang

2018-01-01

Effect of indium (In) droplets on InGaN thin films grown by molecular beam epitaxy (MBE) has been investigated. The surface of InGaN covered by In droplets shows a smoother topography than that without droplets, indicating that the presence of In droplets is beneficial to the two dimensional growth. Beneath the In droplets, many ring-like structures are observed. The arrangement of these "ring" shows the movement of the In droplets during the InGaN growth. A qualitative growth model is proposed to explain the evolution of the InGaN surface morphology in In-droplet-induced-epitaxy process, giving an explanation that a local vapor-liquid-solid (VLS) system is preferentially formed at the edge of the droplets, leading to a high growth rate. Furthermore, the energy dispersive X-ray spectroscopy results reveal that the relatively higher In/Ga flux ratio in the region covered by the In droplet results in a locally higher In content.

Preparation and Optical Properties of GeBi Films by Using Molecular Beam Epitaxy Method

NASA Astrophysics Data System (ADS)

Zhang, Dainan; Liao, Yulong; Jin, Lichuan; Wen, Qi-Ye; Zhong, Zhiyong; Wen, Tianlong; Xiao, John Q.

2017-12-01

Ge-based alloys have drawn great interest as promising materials for their superior visible to infrared photoelectric performances. In this study, we report the preparation and optical properties of germanium-bismuth (Ge1-xBix) thin films by using molecular beam epitaxy (MBE). GeBi thin films belong to the n-type conductivity semiconductors, which have been rarely reported. With the increasing Bi-doping content from 2 to 22.2%, a series of Ge1-xBix thin film samples were obtained and characterized by X-ray diffraction, scanning electron microscopy, and atomic force microscopy. With the increase of Bi content, the mismatch of lattice constants increases, and the GeBi film shifts from direct energy band-gaps to indirect band-gaps. The moderate increase of Bi content reduces optical reflectance and promotes the transmittance of extinction coefficient in infrared wavelengths. The absorption and transmittance of GeBi films in THz band increase with the increase of Bi contents.

Carrier Density Modulation in Ge Heterostructure by Ferroelectric Switching

DOE PAGES

Ponath, Patrick; Fredrickson, Kurt; Posadas, Agham B.; ...

2015-01-14

The development of nonvolatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching, and measurable semiconductor modulation. Here we report a true ferroelectric field effect carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 (BTO) grown by molecular beam epitaxy (MBE) on Ge. Using density functional theory, we demonstrate that switching of BTO polarization results in a large electric potential change in Ge. Aberration-corrected electron microscopy confirms the interface sharpness, and BTO tetragonality. Electron-energy-lossmore » spectroscopy (EELS) indicates the absence of any low permittivity interlayer at the interface with Ge. Using piezoelectric force microscopy (PFM), we confirm the presence of fully switchable, stable ferroelectric polarization in BTO that appears to be single domain. Using microwave impedance microscopy (MIM), we clearly demonstrate a ferroelectric field effect.« less

Ordering and bandgap reduction in InAs{sub 1{minus}x}Sb{sub x} alloys

DOE Office of Scientific and Technical Information (OSTI.GOV)

Follstaedt, D.M.; Biefeld, R.M.; Kurtz, S.R.

1995-02-01

InAs{sub 1{minus}x}Sb{sub x} alloys grown by MBE and MOCVD are found to have reduced emission energies due to CuPt-type order, even for Sb concentrations as low as x = 0.07 ({Delta}E = 25--65 meV). Cross-section TEM examination of such alloys shows the two {l_brace}111{r_brace}{sub B} variants are separated into regions 1--2 {mu}m across with platelet domains 10--40 nm thick on habit planes tilted {approximately}30{center_dot} from the (001) growth surface. Nomarski optical images show a cross-hatched surface pattern expected for lattice-mismatched layers. The local tilt of the surface correlates with the dominant variant in each region. InAs{sub 1{minus}x}Sb{sub x}/In{sub 1{minus}y}Ga{sub y}Asmore » strained-layer superlattices with low Sb content and flat surfaces also show CuPt ordering.« less

Massless Dirac fermions in semimetal HgCdTe

NASA Astrophysics Data System (ADS)

Marchewka, M.; Grendysa, J.; Żak, D.; Tomaka, G.; Śliż, P.; Sheregii, E. M.

2017-01-01

Magneto-transport results obtained for the strained 100 nm thick Hg1-x CdxTe (x=0.135) layer grown by MBE on the CdTe/GaAs substrate are interpreted by the 8×8 kp model with the in-plane tensile strain. The dispersion relation for the investigated structure proves that the Dirac point is located in the gap caused by the strain. It is also shown that the fan of the Landau Levels (LL's) energy calculated for topological protected surface states for the studied HgCdTe alloy corresponds to the fan of the LL's calculated using the graphen-like Hamiltonian which gives excellent agreement with the experimental data for velocity on the Fermi level equal to vf ≈ 0.85×106 m/s. That characterized strained Hg1-x CdxTe layers (0.13 < x < 0.14) are a perfect Topological Insulator with good perspectives of further applications.

Renewable energy.

PubMed

Destouni, Georgia; Frank, Harry

2010-01-01

The Energy Committee of the Royal Swedish Academy of Sciences has in a series of projects gathered information and knowledge on renewable energy from various sources, both within and outside the academic world. In this article, we synthesize and summarize some of the main points on renewable energy from the various Energy Committee projects and the Committee's Energy 2050 symposium, regarding energy from water and wind, bioenergy, and solar energy. We further summarize the Energy Committee's scenario estimates of future renewable energy contributions to the global energy system, and other presentations given at the Energy 2050 symposium. In general, international coordination and investment in energy research and development is crucial to enable future reliance on renewable energy sources with minimal fossil fuel use.

Learning energy literacy concepts from energy-efficient homes

NASA Astrophysics Data System (ADS)

Paige, Frederick Eugene

The purpose of this study is to understand ways that occupants' and visitors' interaction with energy efficient home design affects Energy Literacy. Using a case study approach including interviews, surveys, and observations, I examined the potential for affordable energy efficient homes in the Greenville South Carolina area to "teach" concepts from an Energy Literacy framework developed by dozens of educational partners and federal agencies that comprise the U.S. Global Change Research Program Partners. I paid particular attention to concepts from the framework that are transferable to energy decisions beyond a home's walls. My research reveals ways that interaction with high efficiency homes can effect understanding of the following Energy Literacy concepts: human use of energy is subject to limits and constraints, conservation is one way to manage energy resources, electricity is generated in multiple ways, social and technological innovations effect the amount of energy used by society, and energy use can be calculated and monitored. Examples from my case studies show how the at-home examples can make lessons on energy more personally relevant, easy to understand, and applicable. Specifically, I found that: • Home occupants learn the limits of energy in relation to the concrete and constricting costs associated with their consumption. • Heating and cooling techniques showcase the limits and constraints on different sources of energy. • Relatable systems make it easier to understand energy's limits and constraints. • Indistinct and distant power utilities allow consumers to overlook the root of electricity sources. • Visible examples of electricity generation systems make it clear that electricity is generated in multiple ways. • Small and interactive may mean inefficient electricity generation, but efficient energy education. • Perceptions of expense and complexity create a disconnect between residential energy consumers and renewable electricity

Energy 101: Geothermal Energy

ScienceCinema

None

2018-05-30

See how we can generate clean, renewable energy from hot water sources deep beneath the Earth's surface. The video highlights the basic principles at work in geothermal energy production, and illustrates three different ways the Earth's heat can be converted into electricity.

Laser MBE-grown CoFeB epitaxial layers on MgO: Surface morphology, crystal structure, and magnetic properties

NASA Astrophysics Data System (ADS)

Kaveev, Andrey K.; Bursian, Viktor E.; Krichevtsov, Boris B.; Mashkov, Konstantin V.; Suturin, Sergey M.; Volkov, Mikhail P.; Tabuchi, Masao; Sokolov, Nikolai S.

2018-01-01

Epitaxial layers of CoFeB were grown on MgO by means of laser molecular beam epitaxy using C o40F e40B20 target. The growth was combined with in situ structural characterization by three-dimensional reciprocal space mapping obtained from reflection high energy electron diffraction (RHEED) data. High-temperature single stage growth regime was adopted to fabricate CoFeB layers. As confirmed by the atomic force microscopy, the surface of CoFeB layers consists of closely spaced nanometer sized islands with dimensions dependent on the growth temperature. As shown by RHEED and XRD analysis, the CoFeB layers grown at high-temperature on MgO(001) possess body centered cubic (bcc) crystal structure with the lattice constant a =2.87 Å close to that of the C o75F e25 alloy. It was further shown that following the same high-temperature growth technique the MgO/CoFeB/MgO(001) heterostructures can be fabricated with top and bottom MgO layers of the same crystallographic orientation. The CoFeB layers were also grown on the GaN(0001) substrates using MgO(111) as a buffer layer. In this case, the CoFeB layers crystallize in bcc crystal structure with the (111) axis perpendicular to the substrate surface. The magnetic properties of the CoFeB/MgO (001) heterostructures have been investigated by measuring magnetization curves with a vibrating sample magnetometer as well as by performing magneto-optical Kerr effect (MOKE) and ferromagnetic resonance (FMR) studies. FMR spectra were obtained for the variety of the magnetic field directions and typically consisted of a single relatively narrow resonance line. The magnetization orientations and the resonance conditions were calculated in the framework of a standard magnetic energy minimization procedure involving a single K1 c cubic term for the magnetocrystalline anisotropy. This allows a fairly accurate description of the angular dependences of the resonance fields—both in-plane and out-of-plane. It was shown that CoFeB layers exhibit

Transportation Energy - Sandia Energy

Science.gov Websites

; Components Compatibility Hydrogen Behavior Quantitative Risk Assessment Technical Reference for Hydrogen Combustion jbei Facilities Algae Testbed Battery Abuse Testing Laboratory Center for Infrastructure Research and Innovation Combustion Research Facility Joint BioEnergy Institute Close Energy Research Programs

Energy Efficiency Resources to Support State Energy Planning

DOE Office of Scientific and Technical Information (OSTI.GOV)

Office of Strategic Programs, Strategic Priorities and Impact Analysis Team

An early step for most energy efficiency planning is to identify and quantify energy savings opportunities, and then to understand how to access this potential. The U.S. Department of Energy’s Office of Energy Efficiency and Renewable Energy offers resources that can help with both of these steps. This fact sheet presents those resources. The resources are also available on the DOE State and Local Solution Center on the "Energy Efficiency: Savings Opportunities and Benefits" page: https://energy.gov/eere/slsc/energy-efficiency-savings-opportunities-and-benefits.

Energy planning and energy efficiency assistance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Markel, L.

1995-12-31

Electrotek is an engineering services company specializing in energy-related programs. Clients are most utilities, large energy users, and the U.S. Electric Power Research Institute. Electrotek has directed energy projects for the U.S. Agency for International Development and the U.S. Department of Energy in Poland and other countries of Central Europe. The objective is to assist the host country organizations to identify and implement appropriate energy efficiency and pollution reduction technologies, to transfer technical and organizational knowledge, so that further implementations are market-driven, without needed continuing foreign investment. Electrotek has worked with the Silesian Power Distribution Company to design an energymore » efficiency program for industrial customers that has proven to be profitable for the company and for its customers. The program has both saved energy and costs, and reduced pollution. The program is expanding to include additional customers, without needing more funding from the U.S. government.« less

Energy Technology.

ERIC Educational Resources Information Center

Eaton, William W.

Reviewed are technological problems faced in energy production including locating, recovering, developing, storing, and distributing energy in clean, convenient, economical, and environmentally satisfactory manners. The energy resources of coal, oil, natural gas, hydroelectric power, nuclear energy, solar energy, geothermal energy, winds, tides,…

Collecting Solar Energy. Solar Energy Education Project.

ERIC Educational Resources Information Center

O'Brien, Alexander

This solar energy learning module for use with junior high school students offers a list of activities, a pre-post test, job titles, basic solar energy vocabulary, and diagrams of solar energy collectors and installations. The purpose is to familiarize students with applications of solar energy and titles of jobs where this knowledge could be…

Energy conservation, energy efficiency and energy savings regulatory hypotheses - taxation, subsidies and underlying economics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Trumpy, T.

1995-12-01

More efficient use of energy resources can be promoted by various regulatory means, i.e., taxation, subsidies, and pricing. Various incentives can be provided by income and revenue tax breaks-deductible energy audit fees, energy saving investment credits, breaks for energy saving entrepreneurs, and energy savings accounts run through utility accounts. Value added and excise taxes can also be adjusted to reward energy saving investments and energy saving entrepreneurial activity. Incentives can be provided in the form of cash refunds, including trade-in-and-scrap programs and reimbursements or subsidies on audit costs and liability insurance. Pricing incentives include lower rates for less energy use,more » prepayment of deposit related to peak load use, electronically dispatched multiple tariffs, savings credits based on prior peak use, and subsidized {open_quotes}leasing{close_quotes} of more efficient appliances and lights. Credits, with an emphasis on pooling small loans, and 5-year energy savings contracts are also discussed.« less

Social energy: mining energy from the society

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Jun Jason; Gao, David Wenzhong; Zhang, Yingchen

The inherent nature of energy, i.e., physicality, sociality and informatization, implies the inevitable and intensive interaction between energy systems and social systems. From this perspective, we define 'social energy' as a complex sociotechnical system of energy systems, social systems and the derived artificial virtual systems which characterize the intense intersystem and intra-system interactions. The recent advancement in intelligent technology, including artificial intelligence and machine learning technologies, sensing and communication in Internet of Things technologies, and massive high performance computing and extreme-scale data analytics technologies, enables the possibility of substantial advancement in socio-technical system optimization, scheduling, control and management. In thismore » paper, we provide a discussion on the nature of energy, and then propose the concept and intention of social energy systems for electrical power. A general methodology of establishing and investigating social energy is proposed, which is based on the ACP approach, i.e., 'artificial systems' (A), 'computational experiments' (C) and 'parallel execution' (P), and parallel system methodology. A case study on the University of Denver (DU) campus grid is provided and studied to demonstrate the social energy concept. In the concluding remarks, we discuss the technical pathway, in both social and nature sciences, to social energy, and our vision on its future.« less

Representing Energy. II. Energy Tracking Representations

ERIC Educational Resources Information Center

Scherr, Rachel E.; Close, Hunter G.; Close, Eleanor W.; Vokos, Stamatis

2012-01-01

The Energy Project at Seattle Pacific University has developed representations that embody the substance metaphor and support learners in conserving and tracking energy as it flows from object to object and changes form. Such representations enable detailed modeling of energy dynamics in complex physical processes. We assess student learning by…

Energy Production Systems. Energy Technology Series.

ERIC Educational Resources Information Center

Center for Occupational Research and Development, Inc., Waco, TX.

This course in energy production systems is one of 15 courses in the Energy Technology Series developed for an Energy Conservation-and-Use Technology curriculum. Intended for use in two-year postsecondary technical institutions to prepare technicians for employment, the courses are also useful in industry for updating employees in…

Defects in Arsenic Implanted p + -n- and n + -p- Structures Based on MBE Grown CdHgTe Films

NASA Astrophysics Data System (ADS)

Izhnin, I. I.; Fitsych, E. I.; Voitsekhovskii, A. V.; Korotaev, A. G.; Mynbaev, K. D.; Varavin, V. S.; Dvoretsky, S. A.; Mikhailov, N. N.; Yakushev, M. V.; Bonchyk, A. Yu.; Savytskyy, H. V.; Świątek, Z.

2018-02-01

Complex studies of the defect structure of arsenic-implanted (with the energy of 190 keV) Cd x Hg 1-x Te ( x = 0.22) films grown by molecular-beam epitaxy are carried out. The investigations were performed using secondary-ion mass spectroscopy, transmission electron microscopy, optical reflection in the visible region of the spectrum, and electrical measurements. Radiation donor defects were studied in n +- p- and n +- n-structures obtained by implantation and formed on the basis of p-type and n-type materials, respectively, without activation annealing. It is shown that in the layer of the distribution of implanted ions, a layer of large extended defects with low density is formed in the near-surface region followed by a layer of smaller extended defects with larger density. A different character of accumulation of electrically active donor defects in the films with and without a protective graded-gap surface layer has been revealed. It is demonstrated that p +- n- structures are formed on the basis of n-type material upon activation of arsenic in the process of postimplantation thermal annealing with 100% activation of impurity and complete annihilation of radiation donor defects.

Robinson Rancheria Strategic Energy Plan; Middletown Rancheria Strategic Energy Plan, Scotts Valley Rancheria Strategic Energy Plan, Elem Indian Colony Strategic Energy Plan, Upperlake Rancheria Strategic Energy Plan, Big Valley Rancheria Strategic Energy Plan

DOE Office of Scientific and Technical Information (OSTI.GOV)

McGinnis and Associates LLC

2008-08-01

The Scotts Valley Band of Pomo Indians is located in Lake County in Northern California. Similar to the other five federally recognized Indian Tribes in Lake County participating in this project, Scotts Valley Band of Pomo Indians members are challenged by generally increasing energy costs and undeveloped local energy resources. Currently, Tribal decision makers lack sufficient information to make informed decisions about potential renewable energy resources. To meet this challenge efficiently, the Tribes have committed to the Lake County Tribal Energy Program, a multi Tribal program to be based at the Robinson Rancheria and including The Elem Indian Colony, Bigmore » Valley Rancheria, Middletown Rancheria, Habematolel Pomo of Upper Lake and the Scotts Valley Pomo Tribe. The mission of this program is to promote Tribal energy efficiency and create employment opportunities and economic opportunities on Tribal Lands through energy resource and energy efficiency development. This program will establish a comprehensive energy strategic plan for the Tribes based on Tribal specific plans that capture economic and environmental benefits while continuing to respect Tribal cultural practices and traditions. The goal is to understand current and future energy consumption and develop both regional and Tribe specific strategic energy plans, including action plans, to clearly identify the energy options for each Tribe.« less

Fostering sustained energy behavior change and increasing energy literacy in a student housing energy challenge

NASA Astrophysics Data System (ADS)

Brewer, Robert Stephen

We designed the Kukui Cup challenge to foster energy conservation and increase energy literacy. Based on a review of the literature, the challenge combined a variety of elements into an overall game experience, including: real-time energy feedback, goals, commitments, competition, and prizes. We designed a software system called Makahiki to provide the online portion of the Kukui Cup challenge. Energy use was monitored by smart meters installed on each floor of the Hale Aloha residence halls on the University of Hawai'i at Manoa campus. In October 2011, we ran the UH Kukui Cup challenge for the over 1000 residents of the Hale Aloha towers. To evaluate the Kukui Cup challenge, I conducted three experiments: challenge participation, energy literacy, and energy use. Many residents participated in the challenge, as measured by points earned and actions completed through the challenge website. I measured the energy literacy of a random sample of Hale Aloha residents using an online energy literacy questionnaire administered before and after the challenge. I found that challenge participants' energy knowledge increased significantly compared to non-challenge participants. Positive self-reported energy behaviors increased after the challenge for both challenge participants and non-participants, leading to the possibility of passive participation by the non-challenge participants. I found that energy use varied substantially between and within lounges over time. Variations in energy use over time complicated the selection of a baseline of energy use to compare the levels during and after the challenge. The best team reduced its energy use during the challenge by 16%. However, team energy conservation did not appear to correlate to participation in the challenge, and there was no evidence of sustained energy conservation after the challenge. The problems inherent in assessing energy conservation using a baseline call into question this common practice. My research has

Science Activities in Energy: Electrical Energy.

ERIC Educational Resources Information Center

Oak Ridge Associated Universities, TN.

Presented is a science activities in energy package which includes 16 activities relating to electrical energy. Activities are simple, concrete experiments for fourth, fifth and sixth grades which illustrate principles and problems relating to energy. Each activity is outlined in a single card which is introduced by a question. A teacher's…

Phase-Locked Semiconductor Quantum Well Laser Arrays.

DTIC Science & Technology

1987-03-01

heated monocrystalline substrate. 149 APPENDIX B. A TECHNOLOGICAL APPENDIX 150 The general topic of molecular beam epitaxy (MBE) of compound semi...APPENDIX B. A TECHNOLOGICAL APPENDIX 151 - MONOCRYSTALLINE GaAs SUBSTRATE MOLECULAR / BEAMS...for 30 minutes at 300 C. During this time, the growth chamber cryo- panel is cooled with liquid nitrogen and the sources in the effusion cells are

Fort Leavenworth Ethics Symposium: The Professional Ethic and the State

DTIC Science & Technology

2015-04-23

47 Chapter 6 Ethical Paradox, Cultural Incongruence, and the Need for a Code of Ethics in the US Military by William J . Davis, Jr. PhD...of Military Ethics by Thomas J . Gibbons ....................................................................................................91...PJ McCormack MBE, BD, MTh, PhD (QUB), PhD (Cran), CF ......143 Chapter 14 Multiple Ethical Loyalties in Guantanamo CAPT J . Scott McPherson, USN and

Laterally-Biased Quantum IR Detectors

DTIC Science & Technology

2013-10-23

Rocío San-Román, Adrián Hierro , Journal of Crystal Growth 323, (2011), 496-500. [3] Semiconductor Devices: Physics and Technology 2nd Ed., S.M. Sze...6] “Laterally biased double quantum well IR detector fabricated by MBE regrowth”, Álvaro Guzmán, Rocío San-Román, Adrián Hierro , 16th

Development of 1300 nm GaAs-Based Microcavity Light-Emitting Diodes

DTIC Science & Technology

2001-06-01

vertical - cavity surface emitting lasers ( VCSEL ) and micro- cavity light- emitting diodes (MC-LED) for short-to-medium... epitaxial growth run [1 ]. Self-organized In(Ga)As quantum dot (QD) heterostructures grown by molecular beam epitaxy ( MBE ) are promising candidates as...successfully grown by molecular beam epitaxy on GaAs substrates without the need to rely on any in-situ calibration technique. Fabricated

U.S. energy outlook and future energy impacts

NASA Astrophysics Data System (ADS)

Hamburger, Randolph John

2011-12-01

Energy markets were not immune to the 2007 financial crisis. Growth in the Indian and Chinese economies is placing strains on global energy supplies that could force a repeat of the 2008 price spike of $145/bbl for crude oil. Emerging market growth coupled with inefficiencies, frictions, and speculation in the energy markets has the potential to create drastic economic shocks throughout the world. The 2007 economic crisis has pushed back investment in energy projects where a low-growth scenario in world GDP could create drastic price increases in world energy prices. Without a long-term energy supply plan, the U.S. is destined to see growth reduced and its trade imbalances continue to deteriorate with increasing energy costs. Analysis of the U.S. natural gas futures markets and the impact of financial speculation on natural gas market pricing determined that financial speculation adds to price movements in the energy markets, which could cause violent swings in energy prices.

Sustainable-energy managment practices in an energy economy

NASA Astrophysics Data System (ADS)

Darkwa, K.

2001-10-01

The economic survival of any nation depends upon its ability to produce and manage sufficient supplies of low-cost safe energy. The world's consumption of fossil fuel resources currently increasing at 3% per annum is found to be unsustainable. Projections of this trend show that mankind will exhaust all known reserves in the second half of the coming century. Governments, industrialists, commercial organizations, public sector departments and the general public have now become aware of the urgent requirements for the efficient management of resources and energy-consuming activities. Most organizations in the materials, manufacturing and retail sectors and in the service industries have also created energy management departments, or have employed consultants, to monitor energy consumption and to reduce wastage. Conversely, any sustained attempt to reduce rates of energy consumption even by as little as 0.1% per annum ensures relatively an eternal future supply as well as reduction on environmental and ecological effect. Thus, there is no long- term solution to energy flow problem other than systematic and effective energy management and the continuous application of the techniques of energy management. Essential energy management strategies in support of a sustainable energy- economy are discussed.

Validation and Spatiotemporal Analysis of CERES Surface Net Radiation Product

DOE PAGES

Jia, Aolin; Jiang, Bo; Liang, Shunlin; ...

2016-01-23

The Clouds and the Earth’s Radiant Energy System (CERES) generates one of the few global satellite radiation products. The CERES ARM Validation Experiment (CAVE) has been providing long-term in situ observations for the validation of the CERES products. However, the number of these sites is low and their distribution is globally sparse, and particularly the surface net radiation product has not been rigorously validated yet. Therefore, additional validation efforts are highly required to determine the accuracy of the CERES radiation products. In this study, global land surface measurements were comprehensively collected for use in the validation of the CERES netmore » radiation (R n) product on a daily (340 sites) and a monthly (260 sites) basis, respectively. The validation results demonstrated that the CERES R n product was, overall, highly accurate. The daily validations had a Mean Bias Error (MBE) of 3.43 W·m −2, Root Mean Square Error (RMSE) of 33.56 W·m −2, and R 2 of 0.79, and the monthly validations had an MBE of 3.40 W·m −2, RMSE of 25.57 W·m −2, and R 2 of 0.84. The accuracy was slightly lower for the high latitudes. Following the validation, the monthly CERES R n product, from March 2000 to July 2014, was used for a further analysis. We analysed the global spatiotemporal variation of the R n, which occurred during the measurement period. In addition, two hot spot regions, the southern Great Plains and south-central Africa, were then selected for use in determining the driving factors or attribution of the R n variation. We determined that R n over the southern Great Plains decreased by −0.33 W·m −2 per year, which was mainly driven by changes in surface green vegetation and precipitation. In south-central Africa, R n decreased at a rate of −0.63 W·m −2 per year, the major driving factor of which was surface green vegetation.« less

Validation and Spatiotemporal Analysis of CERES Surface Net Radiation Product

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jia, Aolin; Jiang, Bo; Liang, Shunlin

The Clouds and the Earth’s Radiant Energy System (CERES) generates one of the few global satellite radiation products. The CERES ARM Validation Experiment (CAVE) has been providing long-term in situ observations for the validation of the CERES products. However, the number of these sites is low and their distribution is globally sparse, and particularly the surface net radiation product has not been rigorously validated yet. Therefore, additional validation efforts are highly required to determine the accuracy of the CERES radiation products. In this study, global land surface measurements were comprehensively collected for use in the validation of the CERES netmore » radiation (R n) product on a daily (340 sites) and a monthly (260 sites) basis, respectively. The validation results demonstrated that the CERES R n product was, overall, highly accurate. The daily validations had a Mean Bias Error (MBE) of 3.43 W·m −2, Root Mean Square Error (RMSE) of 33.56 W·m −2, and R 2 of 0.79, and the monthly validations had an MBE of 3.40 W·m −2, RMSE of 25.57 W·m −2, and R 2 of 0.84. The accuracy was slightly lower for the high latitudes. Following the validation, the monthly CERES R n product, from March 2000 to July 2014, was used for a further analysis. We analysed the global spatiotemporal variation of the R n, which occurred during the measurement period. In addition, two hot spot regions, the southern Great Plains and south-central Africa, were then selected for use in determining the driving factors or attribution of the R n variation. We determined that R n over the southern Great Plains decreased by −0.33 W·m −2 per year, which was mainly driven by changes in surface green vegetation and precipitation. In south-central Africa, R n decreased at a rate of −0.63 W·m −2 per year, the major driving factor of which was surface green vegetation.« less

Deriving Daily Time Series Evapotranspiration, Evaporation and Transpiration Maps With Landsat Data

NASA Astrophysics Data System (ADS)

Paul, G.; Gowda, P. H.; Marek, T.; Xiao, X.; Basara, J. B.

2014-12-01

Mapping high resolution evapotranspiration (ET) over large region at daily time step is complex and computationally intensive. Utility of high resolution daily ET maps are large ranging from crop water management to watershed management. The aim of this work is to generate daily time series (10 years) ET and its components vegetation transpiration (T) and soil water evaporation (E) maps using Landsat 5 satellite data for Southern Great Plains forage-rangeland-winter wheat production system in Oklahoma (OK). Framework for generating these products included the two source energy balance (TSEB) algorithm and other important features were: (a) atmospheric correction algorithm; (b) spatially interpolated weather inputs; (c) functions for varying Priestley-Taylor coefficient; and (d) ET, E and T extrapolating algorithm utilizing reference ET. An extensive network of 140 weather stations managed by Oklahoma Mesonet was utilized to generate spatially interpolated inputs of air temperature, relative humidity, wind speed, solar radiation, pressure, and reference ET. Validation of the ET maps were done against eddy covariance data from two grassland sites at El Reno, OK suggested good performance (Table 1). Figure 1 illustrates a daily ET map for a very small subset of 18thJuly 2006 ET map, where difference in ET among different land uses such as the irrigated cropland, vegetation along drainage, and grassland is very distinct. Results indicated that the proposed ET mapping framework is suitable for deriving high resolution time series daily ET maps at regional scale with Landsat Thematic Mapper data. . Table 1: Daily actual ET performance statistics for two grassland locations at El Reno OK for year 2005 . Management Type Mean (obs) (mm d-1) Mean (est) (mm d-1) MBE (mm d-1) % MBE (%) RMSE (mm d-1) RMSE (%) MAE (mm d-1) MAPD (%) NSE R2 Control 2.2 1.8 -0.43 -19.4 0.87 38.9 0.65 29.5 0.71 0.79 Burnt 2.0 1.8 -0.15 -7.7 0.80 39.8 0.62 30.7 0.73 0.77

Studies of the Initial Stages of Epitaxial Growth of Germanium on Silicon

NASA Astrophysics Data System (ADS)

Krishnamurthy, Mohan

The epitaxial growth of ultra-thin films (< 1nm thick) of Ge on Si(100) has been studied in -situ in an Ultra High Vacuum-Scanning Transmission Electron Microscope. Ge was deposited on clean Si(100) using molecular beam techniques to study two types of growth processes, Molecular Beam Epitaxy (MBE) and Solid Phase MBE. Ge grows in the Stranski-Krastanov growth mode, forming islands after initial layer growth. This islanding transition has been studied with high spatial resolution biassed Secondary Electron Imaging and Auger spectroscopy and imaging. Ex -situ Transmission Electron Microscopy (TEM) and Reflection High Energy Diffraction (RHEED) were also used to characterize the transition. The islanding process and its subsequent evolution was monitored with the help of island size distributions, sensitive to islands above 2nm in size. The studies indicate that Ge forms islands in equilibrium with a 3 monolayer (ML) thick intermediate layer. These islands may initially grow coherently strained (dislocation free) with radii usually below 10nm under the conditions. The strain in these islands reduces the adatom sticking coefficient and strongly influences the microstructural evolution. The intermediate layer may grow metastably under certain conditions to as much as 7 ML before collapsing to its equilibrium form. The influence of three types of adatom sinks--strained islands, dislocated islands and contaminant particles have been studied. The contaminant particles are the strongest sinks, followed by dislocated islands and strained islands. Stepped (vicinal) surfaces (1^circ and 5 ^circ toward {110 }) had no significant influence possibly due to the steps being weak adatom sinks. The coarsening of Ge islands does not follow the Ostwald ripening model at the early stages and is influenced by the supersaturation in the intermediate layer and the strain in the coherent islands. A novel mechanism has been observed, where the larger (dislocated) islands grow at the expense

Energy resources

NASA Technical Reports Server (NTRS)

1973-01-01

A statistical analysis of the availability of fossil fuels for energy and non-energy production is presented. The cumulative requirements for petroleum, natural gas, and coal are discussed. Alternate forms of energy are described and the advantages and limitations are analyzed. Emphasis is placed on solar energy availability and methods for conversion. The Federal energy research and development funding for energy sources is tabulated.

Research progress about chemical energy storage of solar energy

NASA Astrophysics Data System (ADS)

Wu, Haifeng; Xie, Gengxin; Jie, Zheng; Hui, Xiong; Yang, Duan; Du, Chaojun

2018-01-01

In recent years, the application of solar energy has been shown obvious advantages. Solar energy is being discontinuity and inhomogeneity, so energy storage technology becomes the key to the popularization and utilization of solar energy. Chemical storage is the most efficient way to store and transport solar energy. In the first and the second section of this paper, we discuss two aspects about the solar energy collector / reactor, and solar energy storage technology by hydrogen production, respectively. The third section describes the basic application of solar energy storage system, and proposes an association system by combining solar energy storage and power equipment. The fourth section briefly describes several research directions which need to be strengthened.

What Is Energy Systems Integration? | Energy Systems Integration Facility |

Science.gov Websites

NREL What Is Energy Systems Integration? What Is Energy Systems Integration? Energy systems integration (ESI) is an approach to solving big energy challenges that explores ways for energy systems to Research Community NREL is a founding member of the International Institute for Energy Systems Integration

Solar energy to meet the nation's energy needs

NASA Technical Reports Server (NTRS)

Rom, F. E.; Thomas, R. L.

1973-01-01

Discussion of the possibilities afforded by solar energy as one of the alternative energy sources capable to take the place of the dwindling oil and gas reserves. Solar energy, being a nondepleting clean source of energy, is shown to be capable of providing energy in all the forms in which it is used today. Steps taken toward providing innovative solutions that are economically competitive with other systems are briefly reviewed.

Doing Better with Less Energy: Energy Master Planning.

ERIC Educational Resources Information Center

Sieben, Stephen P.

1982-01-01

Energy savings through improved operation and maintenance of buildings and through implementation of energy conservation measures are discussed. Energy master planning--an approach to major retrofit and occupancy for existing college buildings, and energy conscious design and occupancy for new buildings--is advocated. (MLW)

An Energy Aware Adaptive Sampling Algorithm for Energy Harvesting WSN with Energy Hungry Sensors.

PubMed

Srbinovski, Bruno; Magno, Michele; Edwards-Murphy, Fiona; Pakrashi, Vikram; Popovici, Emanuel

2016-03-28

Wireless sensor nodes have a limited power budget, though they are often expected to be functional in the field once deployed for extended periods of time. Therefore, minimization of energy consumption and energy harvesting technology in Wireless Sensor Networks (WSN) are key tools for maximizing network lifetime, and achieving self-sustainability. This paper proposes an energy aware Adaptive Sampling Algorithm (ASA) for WSN with power hungry sensors and harvesting capabilities, an energy management technique that can be implemented on any WSN platform with enough processing power to execute the proposed algorithm. An existing state-of-the-art ASA developed for wireless sensor networks with power hungry sensors is optimized and enhanced to adapt the sampling frequency according to the available energy of the node. The proposed algorithm is evaluated using two in-field testbeds that are supplied by two different energy harvesting sources (solar and wind). Simulation and comparison between the state-of-the-art ASA and the proposed energy aware ASA (EASA) in terms of energy durability are carried out using in-field measured harvested energy (using both wind and solar sources) and power hungry sensors (ultrasonic wind sensor and gas sensors). The simulation results demonstrate that using ASA in combination with an energy aware function on the nodes can drastically increase the lifetime of a WSN node and enable self-sustainability. In fact, the proposed EASA in conjunction with energy harvesting capability can lead towards perpetual WSN operation and significantly outperform the state-of-the-art ASA.

An Energy Aware Adaptive Sampling Algorithm for Energy Harvesting WSN with Energy Hungry Sensors

PubMed Central

Srbinovski, Bruno; Magno, Michele; Edwards-Murphy, Fiona; Pakrashi, Vikram; Popovici, Emanuel

2016-01-01

Wireless sensor nodes have a limited power budget, though they are often expected to be functional in the field once deployed for extended periods of time. Therefore, minimization of energy consumption and energy harvesting technology in Wireless Sensor Networks (WSN) are key tools for maximizing network lifetime, and achieving self-sustainability. This paper proposes an energy aware Adaptive Sampling Algorithm (ASA) for WSN with power hungry sensors and harvesting capabilities, an energy management technique that can be implemented on any WSN platform with enough processing power to execute the proposed algorithm. An existing state-of-the-art ASA developed for wireless sensor networks with power hungry sensors is optimized and enhanced to adapt the sampling frequency according to the available energy of the node. The proposed algorithm is evaluated using two in-field testbeds that are supplied by two different energy harvesting sources (solar and wind). Simulation and comparison between the state-of-the-art ASA and the proposed energy aware ASA (EASA) in terms of energy durability are carried out using in-field measured harvested energy (using both wind and solar sources) and power hungry sensors (ultrasonic wind sensor and gas sensors). The simulation results demonstrate that using ASA in combination with an energy aware function on the nodes can drastically increase the lifetime of a WSN node and enable self-sustainability. In fact, the proposed EASA in conjunction with energy harvesting capability can lead towards perpetual WSN operation and significantly outperform the state-of-the-art ASA. PMID:27043559

Solar Energy.

ERIC Educational Resources Information Center

Eaton, William W.

Presented is the utilization of solar radiation as an energy resource principally for the production of electricity. Included are discussions of solar thermal conversion, photovoltic conversion, wind energy, and energy from ocean temperature differences. Future solar energy plans, the role of solar energy in plant and fossil fuel production, and…

Closing the energy gap through passive energy expenditure

USDA-ARS?s Scientific Manuscript database

Development of obesity is a gradual process occurring when daily energy intake persistently exceeds energy expenditure (EE). Typical daily weight gain is attributed to an energy gap or excess of stored energy of 15 to 50 kcal/day. Sedentary jobs likely promote weight gain. Standing may be a passive ...

In situ surface/interface x-ray diffractometer for oxide molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Lee, J. H.; Tung, I. C.; Chang, S.-H.; Bhattacharya, A.; Fong, D. D.; Freeland, J. W.; Hong, Hawoong

2016-01-01

In situ studies of oxide molecular beam epitaxy by synchrotron x-ray scattering has been made possible by upgrading an existing UHV/molecular beam epitaxy (MBE) six-circle diffractometer system. For oxide MBE growth, pure ozone delivery to the chamber has been made available, and several new deposition sources have been made available on a new 12 in. CF (ConFlat, a registered trademark of Varian, Inc.) flange. X-ray diffraction has been used as a major probe for film growth and structures for the system. In the original design, electron diffraction was intended for the secondary diagnostics available without the necessity of the x-ray and located at separate positions. Deposition of films was made possible at the two diagnostic positions. And, the aiming of the evaporation sources is fixed to the point between two locations. Ozone can be supplied through two separate nozzles for each location. Also two separate thickness monitors are installed. Additional features of the equipment are also presented together with the data taken during typical oxide film growth to illustrate the depth of information available via in situ x-ray techniques.

In situ surface/interface x-ray diffractometer for oxide molecular beam epitaxy.

PubMed

Lee, J H; Tung, I C; Chang, S-H; Bhattacharya, A; Fong, D D; Freeland, J W; Hong, Hawoong

2016-01-01

In situ studies of oxide molecular beam epitaxy by synchrotron x-ray scattering has been made possible by upgrading an existing UHV/molecular beam epitaxy (MBE) six-circle diffractometer system. For oxide MBE growth, pure ozone delivery to the chamber has been made available, and several new deposition sources have been made available on a new 12 in. CF (ConFlat, a registered trademark of Varian, Inc.) flange. X-ray diffraction has been used as a major probe for film growth and structures for the system. In the original design, electron diffraction was intended for the secondary diagnostics available without the necessity of the x-ray and located at separate positions. Deposition of films was made possible at the two diagnostic positions. And, the aiming of the evaporation sources is fixed to the point between two locations. Ozone can be supplied through two separate nozzles for each location. Also two separate thickness monitors are installed. Additional features of the equipment are also presented together with the data taken during typical oxide film growth to illustrate the depth of information available via in situ x-ray techniques.

Nucleation and growth of WSe2: enabling large grain transition metal dichalcogenides

NASA Astrophysics Data System (ADS)

Yue, Ruoyu; Nie, Yifan; Walsh, Lee A.; Addou, Rafik; Liang, Chaoping; Lu, Ning; Barton, Adam T.; Zhu, Hui; Che, Zifan; Barrera, Diego; Cheng, Lanxia; Cha, Pil-Ryung; Chabal, Yves J.; Hsu, Julia W. P.; Kim, Jiyoung; Kim, Moon J.; Colombo, Luigi; Wallace, Robert M.; Cho, Kyeongjae; Hinkle, Christopher L.

2017-12-01

The limited grain size (<200 nm) for transition metal dichalcogenides (TMDs) grown by molecular beam epitaxy (MBE) reported in the literature thus far is unsuitable for high-performance device applications. In this work, the fundamental nucleation and growth behavior of WSe2 is investigated through a detailed experimental design combined with on-lattice, diffusion-based first principles kinetic modeling to enable large area TMD growth. A three-stage adsorption-diffusion-attachment mechanism is identified and the adatom stage is revealed to play a significant role in the nucleation behavior. To limit the nucleation density and promote 2D layered growth, it is necessary to have a low metal flux in conjunction with an elevated substrate temperature. At the same time, providing a Se-rich environment further limits the formation of W-rich nuclei which suppresses vertical growth and promotes 2D growth. The fundamental understanding gained through this investigation has enabled an increase of over one order of magnitude in grain size for WSe2 thus far, and provides valuable insight into improving the growth of other TMD compounds by MBE and other growth techniques such as chemical vapor deposition (CVD).

In situ surface/interface x-ray diffractometer for oxide molecular beam epitaxy

DOE PAGES

Lee, J. H.; Tung, I. C.; Chang, S. -H.; ...

2016-01-05

In situ studies of oxide molecular beam epitaxy by synchrotron x-ray scattering has been made possible by upgrading an existing UHV/molecular beam epitaxy (MBE) six-circle diffractometer system. For oxide MBE growth, pure ozone delivery to the chamber has been made available, and several new deposition sources have been made available on a new 12 in. CF (ConFlat, a registered trademark of Varian, Inc.) flange. X-ray diffraction has been used as a major probe for film growth and structures for the system. In the original design, electron diffraction was intended for the secondary diagnostics available without the necessity of the x-raymore » and located at separate positions. Deposition of films was made possible at the two diagnostic positions. And, the aiming of the evaporation sources is fixed to the point between two locations. Ozone can be supplied through two separate nozzles for each location. Also two separate thickness monitors are installed. Finally, additional features of the equipment are also presented together with the data taken during typical oxide film growth to illustrate the depth of information available via in situ x-ray techniques.« less

Fabrication of high-quality single-crystal Cu thin films using radio-frequency sputtering.

PubMed

Lee, Seunghun; Kim, Ji Young; Lee, Tae-Woo; Kim, Won-Kyung; Kim, Bum-Su; Park, Ji Hun; Bae, Jong-Seong; Cho, Yong Chan; Kim, Jungdae; Oh, Min-Wook; Hwang, Cheol Seong; Jeong, Se-Young

2014-08-29

Copper (Cu) thin films have been widely used as electrodes and interconnection wires in integrated electronic circuits, and more recently as substrates for the synthesis of graphene. However, the ultra-high vacuum processes required for high-quality Cu film fabrication, such as molecular beam epitaxy (MBE), restricts mass production with low cost. In this work, we demonstrated high-quality Cu thin films using a single-crystal Cu target and radio-frequency (RF) sputtering technique; the resulting film quality was comparable to that produced using MBE, even under unfavorable conditions for pure Cu film growth. The Cu thin film was epitaxially grown on an Al2O3 (sapphire) (0001) substrate, and had high crystalline orientation along the (111) direction. Despite the 10(-3) Pa vacuum conditions, the resulting thin film was oxygen free due to the high chemical stability of the sputtered specimen from a single-crystal target; moreover, the deposited film had >5× higher adhesion force than that produced using a polycrystalline target. This fabrication method enabled Cu films to be obtained using a simple, manufacturing-friendly process on a large-area substrate, making our findings relevant for industrial applications.

Lattice Gas Model Based Optimization of Plasma-Surface Processes for GaN-Based Compound Growth

NASA Astrophysics Data System (ADS)

Nonokawa, Kiyohide; Suzuki, Takuma; Kitamori, Kazutaka; Sawada, Takayuki

2001-10-01

Progress of the epitaxial growth technique for GaN-based compounds makes these materials attractive for applications in high temperature/high-power electronic devices as well as in short-wavelength optoelectronic devices. For MBE growth of GaN epilayer, atomic nitrogen is usually supplied from ECR-plasma while atomic Ga is supplied from conventional K-cell. To grow high-quality epilayer, fundamental knowledge of the detailed atomic process, such as adsorption, surface migration, incorporation, desorption and so forth, is required. We have studied the influence of growth conditions on the flatness of the growth front surface and the growth rate using Monte Carlo simulation based on the lattice gas model. Under the fixed Ga flux condition, the lower the nitrogen flux and/or the higher the growth temperature, the better the flatness of the front surface at the sacrifice of the growth rate of the epilayer. When the nitrogen flux is increased, the growth rate reaches saturation value determined from the Ga flux. At a fixed growth temperature, increasing of nitrogen to Ga flux ratio results in rough surface owing to 3-dimensional island formation. Other characteristics of MBE-GaN growth using ECR-plasma can be well reproduced.

The 2-6 semiconductor superlattices

NASA Astrophysics Data System (ADS)

Gunshor, R. L.; Otsuka, N.

1992-12-01

The first operational semiconductor diode lasers were demonstrated in the summer of 1991 independently by two U.S. groups, one at 3M and the other a team effort shared by Purdue and Brown Universities. As a result of the close collaboration between MBE and TEM groups within the grant, the structures for lasing and LED (as well as display device) operation were realized with the lowest defect concentrations ever reported for 2-6 structures grown on GaAs by MBE. The reduction of the dislocation levels resulted from an iterative process where the growth could be modified in response to the TEM analysis. The AFOSR funded interface studies have led to our appreciation of the electrical and microstructural considerations obtaining at 2-6/3-5 heterovalent interfaces. As a result the Purdue/Brown group has had equal success in making laser diodes with substrates of both doping types. The Purdue/Brown collaboration has obtained CW operations at 77 K as well as pulsed operation at room temperature using a Zn(S,Se)-based device configuration emitting in the blue (490 nm at room temperature).

Electrical characterization of HgTe nanowires using conductive atomic force microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gundersen, P.; Department of Physics, Norwegian University of Science and Technology, NO-7491 Trondheim; Kongshaug, K. O.

Self-organized HgTe nanowires grown by molecular beam epitaxy (MBE) have been characterized using conductive atomic force microscopy. As HgTe will degrade or evaporate at normal baking temperatures for electron beam lithography (EBL) resists, an alternative method was developed. Using low temperature optical lithography processes, large Au contacts were deposited on a sample covered with randomly oriented, lateral HgTe nanowires. Nanowires partly covered by the large electrodes were identified with a scanning electron microscope and then localized in the atomic force microscope (AFM). The conductive tip of the AFM was then used as a movable electrode to measure current-voltage curves atmore » several locations on HgTe nanowires. The measurements revealed that polycrystalline nanowires had diffusive electron transport, with resistivities two orders of magnitude larger than that of an MBE-grown HgTe film. The difference can be explained by scattering at the rough surface walls and at the grain boundaries in the wires. The method can be a solution when EBL is not available or requires too high temperature, or when measurements at several positions along a wire are required.« less

Spatially explicit estimation of aboveground boreal forest biomass in the Yukon River Basin, Alaska

USGS Publications Warehouse

Ji, Lei; Wylie, Bruce K.; Brown, Dana R. N.; Peterson, Birgit E.; Alexander, Heather D.; Mack, Michelle C.; Rover, Jennifer R.; Waldrop, Mark P.; McFarland, Jack W.; Chen, Xuexia; Pastick, Neal J.

2015-01-01

Quantification of aboveground biomass (AGB) in Alaska’s boreal forest is essential to the accurate evaluation of terrestrial carbon stocks and dynamics in northern high-latitude ecosystems. Our goal was to map AGB at 30 m resolution for the boreal forest in the Yukon River Basin of Alaska using Landsat data and ground measurements. We acquired Landsat images to generate a 3-year (2008–2010) composite of top-of-atmosphere reflectance for six bands as well as the brightness temperature (BT). We constructed a multiple regression model using field-observed AGB and Landsat-derived reflectance, BT, and vegetation indices. A basin-wide boreal forest AGB map at 30 m resolution was generated by applying the regression model to the Landsat composite. The fivefold cross-validation with field measurements had a mean absolute error (MAE) of 25.7 Mg ha−1 (relative MAE 47.5%) and a mean bias error (MBE) of 4.3 Mg ha−1(relative MBE 7.9%). The boreal forest AGB product was compared with lidar-based vegetation height data; the comparison indicated that there was a significant correlation between the two data sets.

Development of High-Performance eSWIR HgCdTe-Based Focal-Plane Arrays on Silicon Substrates

NASA Astrophysics Data System (ADS)

Park, J. H.; Pepping, J.; Mukhortova, A.; Ketharanathan, S.; Kodama, R.; Zhao, J.; Hansel, D.; Velicu, S.; Aqariden, F.

2016-09-01

We report the development of high-performance and low-cost extended short-wavelength infrared (eSWIR) focal-plane arrays (FPAs) fabricated from molecular beam epitaxial (MBE)-grown HgCdTe on Si-based substrates. High-quality n-type eSWIR HgCdTe (cutoff wavelength ˜2.68 μm at 77 K, electron carrier concentration 5.82 × 1015 cm-3) layers were grown on CdTe/Si substrates by MBE. High degrees of uniformity in composition and thickness were demonstrated over three-inch areas, and low surface defect densities (voids 9.56 × 101 cm-2, micro-defects 1.67 × 103 cm-2) were measured. This material was used to fabricate 320 × 256 format, 30 μm pitch FPAs with a planar device architecture using arsenic implantation to achieve p-type doping. The dark current density of test devices showed good uniformity between 190 K and room temperature, and high-quality eSWIR imaging from hybridized FPAs was obtained with a median dark current density of 2.63 × 10-7 A/cm2 at 193 K with a standard deviation of 1.67 × 10-7 A/cm2.

77 FR 50489 - Office of Energy Efficiency and Renewable Energy

Federal Register 2010, 2011, 2012, 2013, 2014

2012-08-21

... DEPARTMENT OF ENERGY Office of Energy Efficiency and Renewable Energy Wind and Water Power Program AGENCY: Office of Energy Efficiency and Renewable Energy, Department of Energy. ACTION: Notice of public meeting. SUMMARY: The Department of Energy (DOE) Wind and Water Power Program (WWPP) is planning a...

Energy Education Incentives: Evaluating the Impact of Consumer Energy Kits

ERIC Educational Resources Information Center

Kirby, Sarah D.; Guin, Autumn; Langham, Laura

2015-01-01

Measuring the energy and environmental impact of residential energy education efforts is difficult. The E-Conservation residential energy management program uses consumer energy kits to document the impact of energy-efficient improvements. The consumer energy kit provides an incentive for individuals attending energy education workshop, helps…

2-D energy analyzer for low energy electrons

DOE Office of Scientific and Technical Information (OSTI.GOV)

Karkare, Siddharth, E-mail: ssk226@cornell.edu; Cultrera, Luca; Hwang, Yoon-Woo

2015-03-15

A 2-D electron energy analyzer is designed and constructed to measure the transverse and longitudinal energy distribution of low energy (<1 eV) electrons. The analyzer operates on the principle of adiabatic invariance and motion of low energy electrons in a strong longitudinal magnetic field. The operation of the analyzer is studied in detail and a design to optimize the energy resolution, signal to noise ratio, and physical size is presented. An energy resolution better than 6 meV has been demonstrated. Such an analyzer is a powerful tool to study the process of photoemission which limits the beam quality in modernmore » accelerators.« less

Rotational Energy.

ERIC Educational Resources Information Center

Lockett, Keith

1988-01-01

Demonstrates several objects rolling down a slope to explain the energy transition among potential energy, translational kinetic energy, and rotational kinetic energy. Contains a problem from Galileo's rolling ball experiment. (YP)

Renewable energy: key factor of China’s energy revolution

NASA Astrophysics Data System (ADS)

Shen, Wan

2017-12-01

To realize the sustainable development of China’s energy industry, it is necessary to speed up the transformation of energy development mode and deepen the reform of the energy system in an all-round way so as to establish a clean, low-carbon, safe and efficient modern energy system. This paper analysed the opportunities and challenges in energy sectors to promote the energy mix update in China. Fossil energy, especially coal, has brought great progress to the world as well as a great deal of negative effects. In recent years, China’s greenhouse gas emissions continued to grow rapidly, and has become the world’s largest greenhouse gas emitter. To deal with the challenge, the Chinese government has promised that renewable energy will account for 15% of total energy consumption in 2020 and 20% in 2030. This goal requires China to add 800 to 1000 GW of wind, solar and other clean energy.

Understanding Energy

ERIC Educational Resources Information Center

Menon, Deepika; Shelby, Blake; Mattingly, Christine

2016-01-01

"Energy" is a term often used in everyday language. Even young children associate energy with the food they eat, feeling tired after playing soccer, or when asked to turn the lights off to save light energy. However, they may not have the scientific conceptual understanding of energy at this age. Teaching energy and matter could be…

Energy Fact Sheets - Sandia Energy

Science.gov Websites

; Components Compatibility Hydrogen Behavior Quantitative Risk Assessment Technical Reference for Hydrogen Combustion jbei Facilities Algae Testbed Battery Abuse Testing Laboratory Center for Infrastructure Research and Innovation Combustion Research Facility Joint BioEnergy Institute Close Energy Research Programs

Energy models and national energy policy

NASA Astrophysics Data System (ADS)

Bloyd, Cary N.; Streets, David G.; Fisher, Ronald E.

1990-01-01

As work begins on the development of a new National Energy Strategy (NES), the role of energy models is becoming increasingly important. Such models are needed to determine and assess both the short and long term effects of new policy initiatives on U.S. energy supply and demand. A central purpose of the model is to translate overall energy strategy goals into policy options while identifying potential costs and environmental benefits. Three models currently being utilized in the NES process are described, followed by a detailed listing of the publicly identified NES goals. These goals are then viewed in light of the basic modeling scenarios that were proposed as part of the NES development process.

Fission Energy and Other Sources of Energy

ERIC Educational Resources Information Center

Alfven, Hannes

1974-01-01

Discusses different forms of energy sources and basic reasons for the opposition to the use of atomic energy. Suggests that research efforts should also be aimed toward the fission technology to make it acceptable besides major research studies conducted in the development of alternative energy sources. (CC)

ENERGY EFFICIENCY AND ENVIRONMENTALLY FRIENDLY DISTRIBUTED ENERGY STORAGE BATTERY

DOE Office of Scientific and Technical Information (OSTI.GOV)

LANDI, J.T.; PLIVELICH, R.F.

2006-04-30

Electro Energy, Inc. conducted a research project to develop an energy efficient and environmentally friendly bipolar Ni-MH battery for distributed energy storage applications. Rechargeable batteries with long life and low cost potentially play a significant role by reducing electricity cost and pollution. A rechargeable battery functions as a reservoir for storage for electrical energy, carries energy for portable applications, or can provide peaking energy when a demand for electrical power exceeds primary generating capabilities.

77 FR 32531 - Renewable Energy and Energy Efficiency Advisory Committee

Federal Register 2010, 2011, 2012, 2013, 2014

2012-06-01

... DEPARTMENT OF COMMERCE International Trade Administration Renewable Energy and Energy Efficiency... of an Open Meeting. SUMMARY: The Renewable Energy and Energy Efficiency Advisory Committee (RE&EEAC... energy and energy efficiency industries, including specific challenges associated with exporting. The...

Effects of energy content and energy density of pre-portioned entrées on energy intake.

PubMed

Blatt, Alexandria D; Williams, Rachel A; Roe, Liane S; Rolls, Barbara J

2012-10-01

Pre-portioned entrées are commonly consumed to help control portion size and limit energy intake. The influence of entrée characteristics on energy intake, however, has not been well studied. We determined how the effects of energy content and energy density (ED, kcal/g) of pre-portioned entrées combine to influence daily energy intake. In a crossover design, 68 non-dieting adults (28 men and 40 women) were provided with breakfast, lunch, and dinner on 1 day a week for 4 weeks. Each meal included a compulsory, manipulated pre-portioned entrée followed by a variety of unmanipulated discretionary foods that were consumed ad libitum. Across conditions, the entrées were varied in both energy content and ED between a standard level (100%) and a reduced level (64%). Results showed that in men, decreases in the energy content and ED of pre-portioned entrées acted independently and added together to reduce daily energy intake (both P < 0.01). Simultaneously decreasing the energy content and ED reduced total energy intake in men by 16% (445 ± 47 kcal/day; P < 0.0001). In women, the entrée factors also had independent effects on energy intake at breakfast and lunch, but at dinner and for the entire day the effects depended on the interaction of the two factors (P < 0.01). Simultaneously decreasing the energy content and ED reduced daily energy intake in women by 14% (289 ± 35 kcal/day; P < 0.0001). Both the energy content and ED of pre-portioned entrées affect daily energy intake and could influence the effectiveness of such foods for weight management.

The Energy Films Index. An Educator's Guide to Current Energy Films.

ERIC Educational Resources Information Center

Scherner, Sharon; And Others

This guide cites and describes 241 films on energy. The categories are: general films on energy, conservation of energy, history of energy development, coal, electricity, food and energy, geothermal, natural gas, nuclear energy, oil/petroleum, oil shale, solar energy, tar sands, tidal energy, wind, impacts of energy, and future of energy. For each…

Indian Renewable Energy and Energy Efficiency Policy Database (Fact Sheet)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bushe, S.

2013-09-01

This fact sheet provides an overview of the Indian Renewable Energy and Energy Efficiency Policy Database (IREEED) developed in collaboration by the United States Department of Energy and India's Ministry of New and Renewable Energy. IREEED provides succinct summaries of India's central and state government policies and incentives related to renewable energy and energy efficiency. The online, public database was developed under the U.S.- India Energy Dialogue and the Clean Energy Solution Center.

78 FR 78340 - Renewable Energy and Energy Efficiency Advisory Committee

Federal Register 2010, 2011, 2012, 2013, 2014

2013-12-26

... DEPARTMENT OF COMMERCE International Trade Administration Renewable Energy and Energy Efficiency... of an Open Meeting. SUMMARY: The Renewable Energy and Energy Efficiency Advisory Committee (RE&EEAC... affecting U.S. competitiveness in exporting renewable energy and energy efficiency (RE&EE) products and...

76 FR 54431 - Renewable Energy and Energy Efficiency Advisory Committee

Federal Register 2010, 2011, 2012, 2013, 2014

2011-09-01

... DEPARTMENT OF COMMERCE International Trade Administration Renewable Energy and Energy Efficiency... of an Open Meeting. SUMMARY: The Renewable Energy and Energy Efficiency Advisory Committee (RE&EEAC... competitiveness of the U.S. renewable energy and energy efficiency industries, including specific challenges...

Levelized Cost of Energy Calculator | Energy Analysis | NREL

Science.gov Websites

Levelized Cost of Energy Calculator Levelized Cost of Energy Calculator Transparent Cost Database Button The levelized cost of energy (LCOE) calculator provides a simple calculator for both utility-scale need to be included for a thorough analysis. To estimate simple cost of energy, use the slider controls

Energy Blocks--A Physical Model for Teaching Energy Concepts

ERIC Educational Resources Information Center

Hertting, Scott

2016-01-01

Most physics educators would agree that energy is a very useful, albeit abstract topic. It is therefore important to use various methods to help the student internalize the concept of energy itself and its related ideas. These methods include using representations such as energy bar graphs, energy pie charts, or energy tracking diagrams.…

77 FR 23224 - Renewable Energy and Energy Efficiency Advisory Committee

Federal Register 2010, 2011, 2012, 2013, 2014

2012-04-18

... DEPARTMENT OF COMMERCE International Trade Administration Renewable Energy and Energy Efficiency... of an open meeting. SUMMARY: The Renewable Energy and Energy Efficiency Advisory Committee (RE&EEAC.... competitiveness in exporting renewable energy and energy efficiency (RE&EE) products and services, such as access...

76 FR 44576 - Renewable Energy and Energy Efficiency Advisory Committee

Federal Register 2010, 2011, 2012, 2013, 2014

2011-07-26

... DEPARTMENT OF COMMERCE International Trade Administration Renewable Energy and Energy Efficiency... of an Open Meeting. SUMMARY: The Renewable Energy and Energy Efficiency Advisory Committee (RE&EEAC... administration of programs and policies to expand the competitiveness of the U.S. renewable energy and energy...

Engage States on Energy Assurance and Energy Security

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kara Colton; John Ratliff; Sue Gander

2008-09-30

The NGA Center's 'Engaging States on Energy Security and Energy Assurance' has been successful in achieving the stated project purposes and objectives both in the initial proposal as well as in subsequent revisions to it. Our activities, which involve the NGA Center for Best Practices (The NGA Center) Homeland Security and Technology Division, included conducting tabletop exercises to help federal and state homeland security and energy officials determine roles and actions for various emergency scenarios. This included efforts to education state official on developing an energy assurance plan, harmonizing approaches to controlling price volatility, implementing reliability standards, understanding short andmore » long-term energy outlooks and fuel diversification, and capitalizing on DOE's research and development activities. Regarding our work on energy efficiency and renewable energy, the NGA Center's Environment, Energy and Natural Resources Division hosted three workshops which engaged states on the clean energy and alternative transportation fuel and also produced several reports on related topics. In addition, we convened 18 meetings, via conference call, of the Energy Working Group. Finally, through the NGA Center's Front and Center newsletter articles, the NGA Center disseminated promising practices to a wide audience of state policymakers. The NGA Center also hosted a number of workshops and web conferences designed to directly engage states on the deliverables under this Cooperative Agreement. Through the NGA Center's written products and newsletter articles, the NGA Center was able to disseminate promising practices to a wide audience of state policymakers.« less

Distinct effects of Cr bulk doping and surface deposition on the chemical environment and electronic structure of the topological insulator Bi2Se3

NASA Astrophysics Data System (ADS)

Yilmaz, Turgut; Hines, William; Sun, Fu-Chang; Pletikosić, Ivo; Budnick, Joseph; Valla, Tonica; Sinkovic, Boris

2017-06-01

In this report, it is shown that Cr doped into the bulk and Cr deposited on the surface of Bi2Se3 films produced by molecular beam epitaxy (MBE) have strikingly different effects on both the electronic structure and chemical environment. Angle resolved photoemission spectroscopy (ARPES) shows that Cr doped into the bulk opens a surface state energy gap which can be seen at room temperature; much higher than the measured ferromagnetic transition temperature of ≈10 K. On the other hand, similar ARPES measurements show that the surface states remain gapless down to 15 K for films with Cr surface deposition. In addition, core-level photoemission spectroscopy of the Bi 5d, Se 3d, and Cr 3p core levels show distinct differences in the chemical environment for the two methods of Cr introduction. Surface deposition of Cr results in the formation of shoulders on the lower binding energy side for the Bi 5d peaks and two distinct Cr 3p peaks indicative of two Cr sites. These striking differences suggests an interesting possibility that better control of doping at only near surface region may offer a path to quantum anomalous Hall states at higher temperatures than reported in the literature.

Distinct effects of Cr bulk doping and surface deposition on the chemical environment and electronic structure of the topological insulator Bi 2 Se 3

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yilmaz, Turgut; Hines, William; Sun, Fu-Chang

In this report, it is shown that Cr doped into the bulk and Cr deposited on the surface of Bi2Se3 films produced by molecular beam epitaxy (MBE) have strikingly different effects on both the electronic structure and chemical environment. Angle resolved photoemission spectroscopy (ARPES) shows that Cr doped into the bulk opens a surface state energy gap which can be seen at room temperature; much higher than the measured ferromagnetic transition temperature of ≈ 10 K. On the other hand, similar ARPES measurements show that the surface states remain gapless down to 15 K for films with Cr surface deposition.more » In addition, core-level photoemission spectroscopy of the Bi 5d, Se 3d, and Cr 3p core levels show distinct differences in the chemical environment for the two methods of Cr introduction. Surface deposition of Cr results in the formation of shoulders on the lower binding energy side for the Bi 5d peaks and two distinct Cr 3p peaks indicative of two Cr sites. These striking differences suggests an interesting possibility that better control of doping at only near surface region may offer a path to quantum anomalous Hall states at higher temperatures than reported in the literature.« less

Distinct effects of Cr bulk doping and surface deposition on the chemical environment and electronic structure of the topological insulator Bi 2 Se 3

DOE PAGES

Yilmaz, Turgut; Hines, William; Sun, Fu-Chang; ...

2017-02-21

In this report, it is shown that Cr doped into the bulk and Cr deposited on the surface of Bi2Se3 films produced by molecular beam epitaxy (MBE) have strikingly different effects on both the electronic structure and chemical environment. Angle resolved photoemission spectroscopy (ARPES) shows that Cr doped into the bulk opens a surface state energy gap which can be seen at room temperature; much higher than the measured ferromagnetic transition temperature of ≈ 10 K. On the other hand, similar ARPES measurements show that the surface states remain gapless down to 15 K for films with Cr surface deposition.more » In addition, core-level photoemission spectroscopy of the Bi 5d, Se 3d, and Cr 3p core levels show distinct differences in the chemical environment for the two methods of Cr introduction. Surface deposition of Cr results in the formation of shoulders on the lower binding energy side for the Bi 5d peaks and two distinct Cr 3p peaks indicative of two Cr sites. These striking differences suggests an interesting possibility that better control of doping at only near surface region may offer a path to quantum anomalous Hall states at higher temperatures than reported in the literature.« less

Development of CCDs for REXIS on OSIRIS-REx

NASA Astrophysics Data System (ADS)

Ryu, Kevin K.; Burke, Barry E.; Clark, Harry R.; Lambert, Renee D.; O'Brien, Peter; Suntharalingam, Vyshnavi; Ward, Christopher M.; Warner, Keith; Bautz, Mark W.; Binzel, Richard P.; Kissel, Steven E.; Masterson, Rebecca A.

2014-07-01

The Regolith x-ray Imaging Spectrometer (REXIS) is a coded-aperture soft x-ray imaging instrument on the OSIRIS-REx spacecraft to be launched in 2016. The spacecraft will fly to and orbit the near-Earth asteroid Bennu, while REXIS maps the elemental distribution on the asteroid using x-ray fluorescence. The detector consists of a 2×2 array of backilluminated 1k×1k frame transfer CCDs with a flight heritage to Suzaku and Chandra. The back surface has a thin p+-doped layer deposited by molecular-beam epitaxy (MBE) for maximum quantum efficiency and energy resolution at low x-ray energies. The CCDs also feature an integrated optical-blocking filter (OBF) to suppress visible and near-infrared light. The OBF is an aluminum film deposited directly on the CCD back surface and is mechanically more robust and less absorptive of x-rays than the conventional free-standing aluminum-coated polymer films. The CCDs have charge transfer inefficiencies of less than 10-6, and dark current of 1e-/pixel/second at the REXIS operating temperature of -60 °C. The resulting spectral resolution is 115 eV at 2 KeV. The extinction ratio of the filter is ~1012 at 625 nm.

Materials science education: ion beam modification and analysis of materials

NASA Astrophysics Data System (ADS)

Zimmerman, Robert; Muntele, Claudiu; Ila, Daryush

2012-08-01

The Center for Irradiation of Materials (CIM) at Alabama A&M University (http://cim.aamu.edu) was established in 1990 to serve the University in its research, education and services to the need of the local community and industry. CIM irradiation capabilities are oriented around two tandem-type ion accelerators with seven beam lines providing high-resolution Rutherford backscattering spectrometry, MeV focus ion beam, high-energy ion implantation and irradiation damage studies, particle-induced X-ray emission, particle-induced gamma emission and ion-induced nuclear reaction analysis in addition to fully automated ion channeling. One of the two tandem ion accelerators is designed to produce high-flux ion beam for MeV ion implantation and ion irradiation damage studies. The facility is well equipped with a variety of surface analysis systems, such as SEM, ESCA, as well as scanning micro-Raman analysis, UV-VIS Spectrometry, luminescence spectroscopy, thermal conductivity, electrical conductivity, IV/CV systems, mechanical test systems, AFM, FTIR, voltammetry analysis as well as low-energy implanters, ion beam-assisted deposition and MBE systems. In this presentation, we will demonstrate how the facility is used in material science education, as well as providing services to university, government and industry researches.

Growth and characterization of AlInAsSb layers lattice-matched to GaSb

NASA Astrophysics Data System (ADS)

Tournet, J.; Rouillard, Y.; Tournié, E.

2017-11-01

We report on the growth by solid-source MBE of random-alloy AlxIn1-xAsySb1-y layers lattice-matched to (0 0 1)-GaSb substrates, with xAl ∈ [0.25; 0.75]. The samples quality and morphology were characterized by X-ray diffraction, Nomarski microscopy and atomic force microscopy. Layers grown at 400 °C demonstrated smooth surfaces and no sign of phase decomposition. Samples with xAl ≤ 0.60 demonstrated photoluminescence (PL) at 300 K whereas samples with higher Al content only demonstrated PL at low temperature. Samples grown at 430 °C, in contrast, exhibited PL at low temperature only, whatever their composition. Inferred bandgap energies corroborate the estimation of a non-null quaternary bowing parameter made by Donati, Kaspi and Malloy in Journal of Applied Physics 94 (2003) 5814. Upon annealing, the PL peak energies increased, getting even closer to the theoretical values. These results are in agreement with recently published results on digital AlInAsSb alloys. Our work, which reports the first evidence for PL emission from random-alloy AlInAsSb layers lattice-matched to GaSb, opens the way to their use in optoelectronic devices.

Impact of P/In flux ratio and epilayer thickness on faceting for nanoscale selective area growth of InP by molecular beam epitaxy.

PubMed

Fahed, M; Desplanque, L; Coinon, C; Troadec, D; Wallart, X

2015-07-24

The impact of the P/In flux ratio and the deposited thickness on the faceting of InP nanostructures selectively grown by molecular beam epitaxy (MBE) is reported. Homoepitaxial growth of InP is performed inside 200 nm wide stripe openings oriented either along a [110] or [1-10] azimuth in a 10 nm thick SiO2 film deposited on an InP(001) substrate. When varying the P/In flux ratio, no major shape differences are observed for [1-10]-oriented apertures. On the other hand, the InP nanostructure cross sections strongly evolve for [110]-oriented apertures for which (111)B facets are more prominent and (001) ones shrink for large P/In flux ratio values. These results show that the growth conditions allow tailoring the nanocrystal shape. They are discussed in the framework of the equilibrium crystal shape model using existing theoretical calculations of the surface energies of different low-index InP surfaces as a function of the phosphorus chemical potential, directly related to the P/In ratio. Experimental observations strongly suggest that the relative (111)A surface energy is probably smaller than the calculated value. We also discuss the evolution of the nanostructure shape with the InP-deposited thickness.