Composition dependence of structural and optical properties in epitaxial Sr(Sn1-xTix)O3 films

NASA Astrophysics Data System (ADS)

Liu, Qinzhuang; Li, Bing; Li, Hong; Dai, Kai; Zhu, Guangping; Wang, Wei; Zhang, Yongxing; Gao, Guanyin; Dai, Jianming

2015-03-01

Epitaxial Sr(Sn1-xTix)O3 (SSTO, x = 0-1) thin films were grown on MgO substrates by a pulsed laser deposition technique. The effects of composition on the structural and optical properties of SSTO films were investigated. X-ray diffraction studies show that the lattice parameter decreases from 4.041 to 3.919 Å gradually with increasing Ti content from 0 to 1 in SSTO films. Optical spectra analysis reveals that the band gap energy Eg decreases continuously from 4.44 to 3.78 eV over the entire doping range, which is explained by the decreasing degree of octahedral tilting distortion and thus the increasing tolerance factor caused by the increasing small-Ti-ion doping concentration.

Wide-band tunable photonic bandgap device and laser in dye-doped liquid crystal refilled cholesteric liquid crystal polymer template system

NASA Astrophysics Data System (ADS)

Lin, Jia-De; Lin, Hong-Lin; Lin, Hsin-Yu; Wei, Guan-Jhong; Lee, Chia-Rong

2017-02-01

The scientists in the field of liquid crystal (LC) have paid significant attention in the exploration of novel cholesteric LC (CLC) polymer template (simply called template) in recent years. The self-assembling nanostructural template with chirality can effectively overcome the limitation in the optical features of traditional CLCs, such as enhancement of reflectivity over 50%, multiple photonic bandgaps (PBGs), and changeable optical characteristics by flexibly replacing the refilling LC materials, and so on. This work fabricates two gradient-pitched CLC templates with two opposite handednesses, which are then merged as a spatially tunable and highly reflective CLC template sample. This sample can simultaneously reflect right- and left-circularly polarized lights and the tunable spectral range includes the entire visible region. By increasing the temperature of the template sample exceeding the clearing point of the refilling LC, the light scattering significantly decreases and the reflectance effectively increase to exceed 50% in the entire visible region. This device has a maximum reflectance over 85% and a wide-band spatial tunability in PBG between 400 nm and 800 nm which covers the entire visible region. Not only the sample can be employed as a wide-band spatially tunable filter, but also the system doping with two suitable laser dyes which emitted fluorescence can cover entire visible region can develop a low-threshold, mirror-less laser with a spatial tunability at spectral regions including blue to red region (from 484 nm to 634 nm) and simultaneous lasing emission of left- and right-circular polarizations.

Defect induced photoluminescence in MoS2 quantum dots and effect of Eu3+/Tb3+ co-doping towards efficient white light emission

NASA Astrophysics Data System (ADS)

Haldar, Dhrubaa; Ghosh, Arnab; Bose, Saptasree; Mondal, Supriya; Ghorai, Uttam Kumar; Saha, Shyamal K.

2018-05-01

Intensive research has been carried out on optical properties of MoS2 quantum dots for versatile applications in photo catalytic, sensing and optoelectronic devices. However, white light generation from MoS2 quantum dots particularly using doping effect is relatively unexplored. Herein we report successful synthesis of Europium (Eu)/Terbium (Tb) co-doped MoS2 quantum dots to achieve white light for potential applications in optoelectronic devices. The dopant ions are introduced into the host lattice to retain the emission colors to cover the entire range of visible light of solar spectrum. Perfect white light (CIE = 0.31, 0.33) with high intensity (quantum yield = 28.29%) is achieved in these rare earth elements co-doped quantum dot system. A new peak is observed in the NIR region which is attributed to the defects present in MoS2 quantum dots. Temperature dependent study has been carried out to understand the origin of this new peak in the NIR region. It is seen that the 'S' defects in the QDs cause the appearance of this peak which shows a blue shift at higher temperature.

Luminescence in Sulfides: A Rich History and a Bright Future

PubMed Central

Smet, Philippe F.; Moreels, Iwan; Hens, Zeger; Poelman, Dirk

2010-01-01

Sulfide-based luminescent materials have attracted a lot of attention for a wide range of photo-, cathodo- and electroluminescent applications. Upon doping with Ce3+ and Eu2+, the luminescence can be varied over the entire visible region by appropriately choosing the composition of the sulfide host. Main application areas are flat panel displays based on thin film electroluminescence, field emission displays and ZnS-based powder electroluminescence for backlights. For these applications, special attention is given to BaAl2S4:Eu, ZnS:Mn and ZnS:Cu. Recently, sulfide materials have regained interest due to their ability (in contrast to oxide materials) to provide a broad band, Eu2+-based red emission for use as a color conversion material in white-light emitting diodes (LEDs). The potential application of rare-earth doped binary alkaline-earth sulfides, like CaS and SrS, thiogallates, thioaluminates and thiosilicates as conversion phosphors is discussed. Finally, this review concludes with the size-dependent luminescence in intrinsic colloidal quantum dots like PbS and CdS, and with the luminescence in doped nanoparticles.

Structure and Internal Stress of Tin-Doped Indium Oxide and Indium-Zinc Oxide Films Deposited by DC Magnetron Sputtering

NASA Astrophysics Data System (ADS)

Nishimura, Eriko; Sasabayashi, Tomoko; Ito, Norihiro; Sato, Yasushi; Utsumi, Kentaro; Yano, Koki; Kaijo, Akira; Inoue, Kazuyoshi; Shigesato, Yuzo

2007-12-01

Representative transparent conductive oxide films, such as tin-doped indium oxide (ITO) and indium-zinc oxide (IZO) films, were deposited by dc magnetron sputtering using corresponding oxide targets under various total gas pressures (Ptot) ranging from 0.3 to 3.0 Pa. The ITO films deposited at a Ptot lower than 0.7 Pa were polycrystalline and were found to have a large compressive stress of about 1.5 × 109 Pa, whereas the ITO films deposited at 1.5-3.0 Pa were amorphous and had a low tensile stress. In contrast, all the IZO films deposited at a Ptot range of 0.3-3.0 Pa showed an entirely amorphous structure, where the compressive stress in the IZO films deposited at a Ptot lower than 1.5 Pa was lower than that in the ITO films. Such compressive stress was considered to be generated by the atomic peening effect of high-energy neutrals (Ar0) recoiled from the target or high-energy negative ions (O-) accelerated in the cathode sheath toward the film surface.

Nonlinear Optical Properties of Aluminum Doped Zinc Oxide

NASA Astrophysics Data System (ADS)

Otieno, Calford O.

Nonlinear optical (NLO) materials are crucial to future progress in industrial and technological applications that involve intense light-matter interaction. While ZnO-related materials are known to possess good NLO properties, existing results on ZnO and AZO (Al-doped ZnO) are mostly available at a single wavelength or limited ranges. Therefore, NLO dispersions (wavelength dependences) are not entirely studied, especially at longer wavelengths far below the bandgap. It is important to explore wavelength dependences since doping can induce a drastic change in the NLO responses at varied spectral ranges via doping-induced subgap-state contributions. We present results of our studies on nonlinear harmonic generation from our samples, which include 1) second harmonic generation and 2) third harmonic generation precisely characterized by Maker fringes as a function of both Al doping and wavelength. We exhaustively discuss the possible cause for the modified optical nonlinearities observed in our AZO thin films and give detailed comparisons of our observations with the previous studies. We also present the results of open- and close-aperture Z-scans to characterize the two-photon absorption coefficient (TPA) and the nonlinear refractive index (NLR), respectively, of the AZO films. There was no clearcut evidence of monotonic dependence of TPA and NLR on doping. This presumably indicates that the overall effect is nontrivial and should be understood in terms of combined effects of bandgap shift and crystallinity upon varying the doping level. Most intriguingly, we found that NLR values from the closed-aperture Z-scan are very large by orders of magnitude when compared with the bulk counterparts. Similar observation was made for TPA values from the open-aperture Z-scan. To countercheck very large NLO absorption, we conducted simple intensity scan by varying the incident photon number on each sample but fixing the beam area to eliminate any possible errors related to optical damage at the Z-scan focus. However, we confirmed that the TPA values are also very large and comparable to those obtained by the open-aperture Z-scan. We try to explain this very large nonlinearity by seriously considering the previously proposed models.

Dynamic modulation of electronic properties of graphene by localized carbon doping using focused electron beam induced deposition

NASA Astrophysics Data System (ADS)

Kim, S.; Russell, M.; Henry, M.; Kim, S. S.; Naik, R. R.; Voevodin, A. A.; Jang, S. S.; Tsukruk, V. V.; Fedorov, A. G.

2015-09-01

We report on the first demonstration of controllable carbon doping of graphene to engineer local electronic properties of a graphene conduction channel using focused electron beam induced deposition (FEBID). Electrical measurements indicate that an ``n-p-n'' junction on graphene conduction channel is formed by partial carbon deposition near the source and drain metal contacts by low energy (<50 eV) secondary electrons due to inelastic collisions of long range backscattered primary electrons generated from a low dose of high energy (25 keV) electron beam (1 × 1018 e- per cm2). Detailed AFM imaging provides direct evidence of the new mechanism responsible for dynamic evolution of the locally varying graphene doping. The FEBID carbon atoms, which are physisorbed and weakly bound to graphene, diffuse towards the middle of graphene conduction channel due to their surface chemical potential gradient, resulting in negative shift of Dirac voltage. Increasing a primary electron dose to 1 × 1019 e- per cm2 results in a significant increase of carbon deposition, such that it covers the entire graphene conduction channel at high surface density, leading to n-doping of graphene channel. Collectively, these findings establish a unique capability of FEBID technique to dynamically modulate the doping state of graphene, thus enabling a new route to resist-free, ``direct-write'' functional patterning of graphene-based electronic devices with potential for on-demand re-configurability.We report on the first demonstration of controllable carbon doping of graphene to engineer local electronic properties of a graphene conduction channel using focused electron beam induced deposition (FEBID). Electrical measurements indicate that an ``n-p-n'' junction on graphene conduction channel is formed by partial carbon deposition near the source and drain metal contacts by low energy (<50 eV) secondary electrons due to inelastic collisions of long range backscattered primary electrons generated from a low dose of high energy (25 keV) electron beam (1 × 1018 e- per cm2). Detailed AFM imaging provides direct evidence of the new mechanism responsible for dynamic evolution of the locally varying graphene doping. The FEBID carbon atoms, which are physisorbed and weakly bound to graphene, diffuse towards the middle of graphene conduction channel due to their surface chemical potential gradient, resulting in negative shift of Dirac voltage. Increasing a primary electron dose to 1 × 1019 e- per cm2 results in a significant increase of carbon deposition, such that it covers the entire graphene conduction channel at high surface density, leading to n-doping of graphene channel. Collectively, these findings establish a unique capability of FEBID technique to dynamically modulate the doping state of graphene, thus enabling a new route to resist-free, ``direct-write'' functional patterning of graphene-based electronic devices with potential for on-demand re-configurability. Electronic supplementary information (ESI) available: Optimization of a PMMA-mediated wet transfer method of graphene, transfer characteristics of all the channels, raw data of drain-source current measured by sweeping a backgate voltage and an AFM topography image and cross-sectional profiles of Fig. 4 and the corresponding electrical measurement along with an estimation of carbon diffusion coefficient. See DOI: 10.1039/c5nr04063a

Utilizing wheel-ring architecture for stable and selectable single-longitudinal-mode erbium fiber laser

NASA Astrophysics Data System (ADS)

Yeh, Chien-Hung; Yang, Zi-Qing; Huang, Tzu-Jung; Chow, Chi-Wai

2018-03-01

To achieve a steady single-longitudinal-mode (SLM) erbium-doped fiber (EDF) laser, the wheel-ring architecture is proposed in the laser cavity. According to Vernier effect, the proposed wheel-ring can produce three different free spectrum ranges (FSRs) to serve as the mode-filter for suppressing the densely multi-longitudinal-mode (MLM). Here, to complete wavelength-tunable EDF laser, an optical tunable bandpass filter (OTBF) is utilized inside the cavity for tuning arbitrarily. In addition, the entire output performances of the proposed EDF wheel-ring laser are also discussed and analyzed experimentally.

Transition-Metal Substitution Doping in Synthetic Atomically Thin Semiconductors

DOE PAGES

Gao, Jian; Kim, Young Duck; Liang, Liangbo; ...

2016-09-20

Semiconductor impurity doping has enabled an entire generation of technology. The emergence of alternative semiconductor material systems, such as transition metal dichalcogenides (TMDCs), requires the development of scalable doping strategies. We report an unprecedented one-pot synthesis for transition-metal substitution in large-area, synthetic monolayer TMDCs. Electron microscopy, optical and electronic transport characterization and ab initio calculations indicate that our doping strategy preserves the attractive qualities of TMDC monolayers, including semiconducting transport and strong direct-gap luminescence. These results are expected to encourage exploration of transition-metal substitution in two-dimensional systems, potentially enabling next-generation optoelectronic technology in the atomically-thin regime.

Molecular Electrical Doping of Organic Semiconductors: Fundamental Mechanisms and Emerging Dopant Design Rules.

PubMed

Salzmann, Ingo; Heimel, Georg; Oehzelt, Martin; Winkler, Stefanie; Koch, Norbert

2016-03-15

Today's information society depends on our ability to controllably dope inorganic semiconductors, such as silicon, thereby tuning their electrical properties to application-specific demands. For optoelectronic devices, organic semiconductors, that is, conjugated polymers and molecules, have emerged as superior alternative owing to the ease of tuning their optical gap through chemical variability and their potential for low-cost, large-area processing on flexible substrates. There, the potential of molecular electrical doping for improving the performance of, for example, organic light-emitting devices or organic solar cells has only recently been established. The doping efficiency, however, remains conspicuously low, highlighting the fact that the underlying mechanisms of molecular doping in organic semiconductors are only little understood compared with their inorganic counterparts. Here, we review the broad range of phenomena observed upon molecularly doping organic semiconductors and identify two distinctly different scenarios: the pairwise formation of both organic semiconductor and dopant ions on one hand and the emergence of ground state charge transfer complexes between organic semiconductor and dopant through supramolecular hybridization of their respective frontier molecular orbitals on the other hand. Evidence for the occurrence of these two scenarios is subsequently discussed on the basis of the characteristic and strikingly different signatures of the individual species involved in the respective doping processes in a variety of spectroscopic techniques. The critical importance of a statistical view of doping, rather than a bimolecular picture, is then highlighted by employing numerical simulations, which reveal one of the main differences between inorganic and organic semiconductors to be their respective density of electronic states and the doping induced changes thereof. Engineering the density of states of doped organic semiconductors, the Fermi-Dirac occupation of which ultimately determines the doping efficiency, thus emerges as key challenge. As a first step, the formation of charge transfer complexes is identified as being detrimental to the doping efficiency, which suggests sterically shielding the functional core of dopant molecules as an additional design rule to complement the requirement of low ionization energies or high electron affinities in efficient n-type or p-type dopants, respectively. In an extended outlook, we finally argue that, to fully meet this challenge, an improved understanding is required of just how the admixture of dopant molecules to organic semiconductors does affect the density of states: compared with their inorganic counterparts, traps for charge carriers are omnipresent in organic semiconductors due to structural and chemical imperfections, and Coulomb attraction between ionized dopants and free charge carriers is typically stronger in organic semiconductors owing to their lower dielectric constant. Nevertheless, encouraging progress is being made toward developing a unifying picture that captures the entire range of doping induced phenomena, from ion-pair to complex formation, in both conjugated polymers and molecules. Once completed, such a picture will provide viable guidelines for synthetic and supramolecular chemistry that will enable further technological advances in organic and hybrid organic/inorganic devices.

Fiber lasers with loop reflectors.

PubMed

Urquhart, P

1989-09-01

The theory of homogeneously broadened four level fiber lasers, which use fiber loops as distributed reflective elements, is examined. Such cavities can be made entirely from rare earth doped fiber. The amplifying characteristics of doped fiber loops are examined. The threshold pump power and the loop reflectivity necessary to optimize the lasing output power from an oscillator formed from two loops in series are predicted.

Low-temperature thermoelectric properties of Pb doped Cu2SnSe3

NASA Astrophysics Data System (ADS)

Prasad K, Shyam; Rao, Ashok; Gahtori, Bhasker; Bathula, Sivaiah; Dhar, Ajay; Chang, Chia-Chi; Kuo, Yung-Kang

2017-09-01

A series of Cu2Sn1-xPbxSe3 (0 ≤ x ≤ 0.04) compounds was prepared by solid state synthesis technique. The electrical resistivity (ρ) decreased with increase in Pb content up to x = 0.01, thereafter it increased with further increase in x (till x = 0.03). However, the lowest value of electrical resistivity is observed for Cu2Sn0.96Pb0.04Se3. Analysis of electrical resistivity of all the samples suggests that small poloron hoping model is operative in the high temperature regime while variable range hopping is effective in the low temperature regime. The positive Seebeck coefficient (S) for pristine and doped samples in the entire temperature range indicates that the majority charge carriers are holes. The electronic thermal conductivity (κe) of the Cu2Sn1-xPbxSe3 compounds was estimated by the Wiedemann-Franz law and found that the contribution from κe is less than 1% of the total thermal conductivity (κ). The highest ZT 0.013 was achieved at 400 K for the sample Cu2Sn0.98Pb0.02Se3, about 30% enhancement as compared to the pristine sample.

Cuprate diamagnetism in the presence of a pseudogap: Beyond the standard fluctuation formalism

NASA Astrophysics Data System (ADS)

Boyack, Rufus; Chen, Qijin; Varlamov, A. A.; Levin, K.

2018-02-01

It is often claimed that among the strongest evidence for preformed-pair physics in the cuprates are the experimentally observed large values for the diamagnetic susceptibility and Nernst coefficient. These findings are most apparent in the underdoped regime, where a pseudogap is also evident. While the conventional (Gaussian) fluctuation picture has been applied to address these results, this preformed-pair approach omits the crucial effects of a pseudogap. In this paper we remedy this omission by computing the diamagnetic susceptibility and Nernst coefficient in the presence of a normal state gap. We find a large diamagnetic response for a range of temperatures much higher than the transition temperature. In particular, we report semiquantitative agreement with the measured diamagnetic susceptibility onset temperatures, over the entire range of hole dopings. Notable is the fact that at the lower critical doping of the superconducting dome, where the transition temperature vanishes and the pseudogap onset temperature remains large, the onset temperature for both diamagnetic and transverse thermoelectric transport coefficients tends to zero. Due to the importance attributed to the cuprate diamagnetic susceptibility and Nernst coefficient, this work helps to clarify the extent to which pairing fluctuations are a component of the cuprate pseudogap.

Effect of Stepwise Doping on Lifetime and Efficiency of Blue and White Phosphorescent Organic Light Emitting Diodes.

PubMed

Lee, Song Eun; Lee, Ho Won; Lee, Seok Jae; Koo, Ja-ryong; Lee, Dong Hyung; Yang, Hyung Jin; Kim, Hye Jeong; Yoon, Seung Soo; Kim, Young Kwan

2015-02-01

We investigated a light emission mechanism of blue phosphorescent organic light emitting diodes (PHOLEDs), using a stepwise doping profile of 2, 8, and 14 wt.% within the emitting layer (EML). We fabricated several blue PHOLEDs with phosphorescent blue emitter iridium(III) bis[(4,6-difluorophenyl)-pyridinato-N,C2]picolinate doped in N,N'-dicarbazolyl-3,5-benzene as a p-type host material. A blue PHOLED with the highest doping concentration as part of the EML close to an electron transporting layer showed a maximum luminous efficiency of 20.74 cd/A, and a maximum external quantum efficiency of 10.52%. This can be explained by effective electron injection through a highly doped EML side. Additionally, a white OLED based on the doping profile was fabricated with two thin red EMLs within a blue EML maintaining a thickness of 30 nm for the entire EML. Keywords: Blue Phosphorescent Organic Light Emitting Diodes, Stepwise Doping Structure, Charge Trapping Effect.

Shifting in optoelectronic properties from pure K2O and Rb2O compounds to their V- and Cr-doped alloys

NASA Astrophysics Data System (ADS)

Monir, Mohammed El Amine; Ullah, Hayat; Baltach, Hadj; Mouchaal, Younes; Merabiha, Omar; Bahnes, Aicha; Rached, Djamel

2018-04-01

First principle calculations within the density functional theory (DFT) have been used in this approach to study the electronic and optical properties of vanadium (V) and chromium (Cr) doped K2O and Rb2O compounds. Based on the structure properties reported in our previous work, the study of electronic and optoelectronic properties of V- and Cr-doped K2O and Rb2O alloys have been vastly investigated. K2O and Rb2O are found to be semiconductors while their V- and Cr-alloys are metallic in nature. The optical functions like complex dielectric constant, complex index of refraction, absorption coefficient, and reflectivity of these alloys are computed and compared with those of pure K2O and Rb2O compounds. It has been shown that due to TM-doping (TM = V and Cr transition metals), many distinguished peaks appeared in the lower energy part (infrared) of the spectrum. The negative value of 𝜀1 (ω) in this energy range confirmed the metallic behavior of these alloys. Furthermore, the frequency-dependent optical conductivity is also predicted in the entire spectrum, where it increases with increasing photon energy for all the studied alloys. The significant results of α (ω) predict that all these compounds are useful in different optoelectronic applications in a wide part of the spectrum (between 13 eV and 27 eV).

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mahamdioua, N., E-mail: mahamdioua.nabil@gmail.com; Amira, A.; Altintas, S.P.

We present structural, magnetic and electrical properties of the polycrystalline A-site-deficient yttrium doped double layered manganites La{sub 1.2−x}□{sub 0.2}Y{sub x}Ca{sub 1.6}Mn{sub 2}O{sub 7} (x=0.2, 0.3 and 0.4) prepared by a solid state reaction method. The samples crystallize in the tetragonal structure with the space group I4/mmm. Doping with Y decreases the cell parameters and causes a decrease of the metal-insulator transition temperature. The same evolution with doping is also seen for the deduced Curie temperature from susceptibility curves which present a clear paramagnetic-ferromagnetic transition. The significant positive intrinsic magnetoresistance, shown in all samples, reaches 85% at 122 K under 7more » T for 0.3 doped sample and can be attributed to the suppression of spin fluctuations via aligning the spins under external magnetic field, while the extrinsic one is attributed to the inter-grain spin-polarized tunneling across the grain boundaries. The simulation of the resistivity curves in the entire temperature range show that the percolation model is suitable to fit our results. The applied magnetic field increases the density of states near the Fermi level, which is in accordance with the observed decrease of resistivity. - Graphical abstract: Resistivity and magnetoresistance of La{sub 1.2−x}□{sub 0.2}Y{sub x}Ca{sub 1.6}Mn{sub 2}O{sub 7} (x=0.2, 0.3, 0.4). Solid lines correspond to the fitting results. Display Omitted.« less

Single linearly polarized, widely and freely tunable two wavelengths Yb3+-doped fiber laser

NASA Astrophysics Data System (ADS)

Liu, Dongfeng; Wang, Chinhua

2010-01-01

We report a novel single linearly polarized, widely, freely and continuously tunable two wavelengths Yb3+-doped fiber laser. The laser generates stable arbitrary two wavelengths output between 1003.1 and 1080.7 nm peak wavelengths simultaneously with a 346.0 mW CW power by using polarization beam splitting (PBS) for separation of two wavelengths. Each lasing line shows a single polarization with a polarization extinction ratio of >20 dB under different pump levels. The central and the interval of the two wavelengths can be tuned smoothly and independently in the entire gain region of >70 nm of PM Yb3+-doped single mode fiber. Strongly enhanced polarization-hole burning (PHB) phenomena in polarization maintain (PM) Yb3+-doped fiber was observed in the tunable two wavelengths Yb3+-doped fiber laser.

Dephasing rates for weak localization and universal conductance fluctuations in two dimensional Si:P and Ge:P δ-layers.

PubMed

Shamim, Saquib; Mahapatra, S; Scappucci, G; Klesse, W M; Simmons, M Y; Ghosh, Arindam

2017-05-04

We report quantum transport measurements on two dimensional (2D) Si:P and Ge:P δ-layers and compare the inelastic scattering rates relevant for weak localization (WL) and universal conductance fluctuations (UCF) for devices of various doping densities (0.3-2.5 × 10 18 m -2 ) at low temperatures (0.3-4.2 K). The phase breaking rate extracted experimentally from measurements of WL correction to conductivity and UCF agree well with each other within the entire temperature range. This establishes that WL and UCF, being the outcome of quantum interference phenomena, are governed by the same dephasing rate.

High-temperature-resistant distributed Bragg reflector fiber laser written in Er/Yb co-doped fiber.

PubMed

Guan, Bai-Ou; Zhang, Yang; Wang, Hong-Jun; Chen, Da; Tam, Hwa-Yaw

2008-03-03

We present a high-temperature-resistant distributed Bragg reflector fiber laser photowritten in Er/Yb codoped phosphosilicate fiber that is capable of long-term operation at 500 degrees C. Highly saturated Bragg gratings are directly inscribed into the Er/Yb fiber without hydrogen loading by using a 193 nm excimer laser and phase mask method. After annealing at elevated temperature, the remained gratings are strong enough for laser oscillation. The laser operates in robust single mode with output power more than 1 dBm and signal-to-noise ratio better than 70 dB over the entire temperature range from room temperature to 500 degrees C.

Energy gap evolution across the superconductivity dome in single crystals of (Ba1−xKx)Fe2As2

PubMed Central

Cho, Kyuil; Kończykowski, Marcin; Teknowijoyo, Serafim; Tanatar, Makariy A.; Liu, Yong; Lograsso, Thomas A.; Straszheim, Warren E.; Mishra, Vivek; Maiti, Saurabh; Hirschfeld, Peter J.; Prozorov, Ruslan

2016-01-01

The mechanism of unconventional superconductivity in iron-based superconductors (IBSs) is one of the most intriguing questions in current materials research. Among non-oxide IBSs, (Ba1−xKx)Fe2As2 has been intensively studied because of its high superconducting transition temperature and fascinating evolution of the superconducting gap structure from being fully isotropic at optimal doping (x ≈ 0.4) to becoming nodal at x > 0.8. Although this marked evolution was identified in several independent experiments, there are no details of the gap evolution to date because of the lack of high-quality single crystals covering the entire K-doping range of the superconducting dome. We conducted a systematic study of the London penetration depth, λ(T), across the full phase diagram for different concentrations of point-like defects introduced by 2.5-MeV electron irradiation. Fitting the low-temperature variation with the power law, Δλ ~ Tn, we find that the exponent n is the highest and the Tc suppression rate with disorder is the smallest at optimal doping, and they evolve with doping being away from optimal, which is consistent with increasing gap anisotropy, including an abrupt change around x ≃ 0.8, indicating the onset of nodal behavior. Our analysis using a self-consistent t-matrix approach suggests the ubiquitous and robust nature of s± pairing in IBSs and argues against a previously suggested transition to a d-wave state near x = 1 in this system. PMID:27704046

Energy gap evolution across the superconductivity dome in single crystals of (Ba1-x K x )Fe2As2.

PubMed

Cho, Kyuil; Kończykowski, Marcin; Teknowijoyo, Serafim; Tanatar, Makariy A; Liu, Yong; Lograsso, Thomas A; Straszheim, Warren E; Mishra, Vivek; Maiti, Saurabh; Hirschfeld, Peter J; Prozorov, Ruslan

2016-09-01

The mechanism of unconventional superconductivity in iron-based superconductors (IBSs) is one of the most intriguing questions in current materials research. Among non-oxide IBSs, (Ba 1- x K x )Fe 2 As 2 has been intensively studied because of its high superconducting transition temperature and fascinating evolution of the superconducting gap structure from being fully isotropic at optimal doping ( x ≈ 0.4) to becoming nodal at x > 0.8. Although this marked evolution was identified in several independent experiments, there are no details of the gap evolution to date because of the lack of high-quality single crystals covering the entire K-doping range of the superconducting dome. We conducted a systematic study of the London penetration depth, λ( T ), across the full phase diagram for different concentrations of point-like defects introduced by 2.5-MeV electron irradiation. Fitting the low-temperature variation with the power law, Δλ ~ T n , we find that the exponent n is the highest and the T c suppression rate with disorder is the smallest at optimal doping, and they evolve with doping being away from optimal, which is consistent with increasing gap anisotropy, including an abrupt change around x ≃ 0.8, indicating the onset of nodal behavior. Our analysis using a self-consistent t -matrix approach suggests the ubiquitous and robust nature of s ± pairing in IBSs and argues against a previously suggested transition to a d -wave state near x = 1 in this system.

IMPACT OF Ce DOPING ON THE MAGNETIC AND TRANSPORT PROPERTIES OF Y1-xCexSr2Ru0.9Cu2.1O7.9; x = 0.05 AND 0.1

NASA Astrophysics Data System (ADS)

Balamurugan, S.

2012-11-01

The magnetic and transport properties of lightly Ce doped, Y1-xCexSr2Ru0.9Cu2.1 O7.9(x = 0.05 and 0.1) samples have been studied and their results are compared with the pristine rutheno-cuprate, YSr2Ru0.9Cu2.1O7.9. The electron doping due to Ce4+ for Y3+ ion impacts on the physical properties of the present system. The tetragonal stabilized samples exhibit magneto superconducting properties under zero field cooled condition (H = 10 Oe) and the diamagnetic onset transition, Td shift slightly towards higher temperature with the increase of "x". Weak antiferromagnetic like hysteresis curves are seen for these samples at 2 K in the magnetic field strength up to ±10 kOe and the magnetization moment, M(μB/Ru) decreases with increase of "x". While the magnetic property of the present system is due to canted Ru moments, the superconducting signal originates from CuO2 plane. Through electrical resistivity measurements we observe that none of the samples exhibit bulk superconductivity down to 2 K. However the x = 0.05 sample reveals lowest resistivity in the entire temperature range than x = 0 and 0.1 samples. The isothermal magnetoresistance, MR(H) measured at different temperatures vary with tuning of "x". While x = 0.1 doped sample shows lower -MR( 8%), the pristine sample exhibits maximum -MR(45%) at 2 K under ±90 kOe field condition.

Energy gap evolution across the superconductivity dome in single crystals of (Ba 1-xK x)Fe 2As 2

DOE PAGES

Cho, Kyuil; Konczykowski, Marcin; Teknowijoyo, Serafim; ...

2016-09-30

The mechanism of unconventional superconductivity in iron-based superconductors (IBSs) is one of the most intriguing questions in current materials research. Among non-oxide IBSs, (Ba 1$-$xK x)Fe 2As 2 has been intensively studied because of its high superconducting transition temperature and fascinating evolution of the superconducting gap structure from being fully isotropic at optimal doping (x ≈ 0.4) to becoming nodal at x > 0.8. Although this marked evolution was identified in several independent experiments, there are no details of the gap evolution to date because of the lack of high-quality single crystals covering the entire K-doping range of the superconductingmore » dome. In this work, we conducted a systematic study of the London penetration depth, λ(T), across the full phase diagram for different concentrations of point-like defects introduced by 2.5-MeV electron irradiation. Fitting the low-temperature variation with the power law, Δλ ~ T n, we find that the exponent n is the highest and the Tc suppression rate with disorder is the smallest at optimal doping, and they evolve with doping being away from optimal, which is consistent with increasing gap anisotropy, including an abrupt change around x ≃ 0.8, indicating the onset of nodal behavior. Our analysis using a self-consistent t-matrix approach suggests the ubiquitous and robust nature of s ± pairing in IBSs and argues against a previously suggested transition to a d-wave state near x = 1 in this system.« less

Gene expression analysis in rat lungs after intratracheal exposure to nanoparticles doped with cadmium

NASA Astrophysics Data System (ADS)

Coccini, Teresa; Fabbri, Marco; Roda, Elisa; Grazia Sacco, Maria; Manzo, Luigi; Gribaldo, Laura

2011-07-01

Silica nanoparticles (NPs) incorporating cadmium (Cd) have been developed for a range of potential application including drug delivery devices. Occupational Cd inhalation has been associated with emphysema, pulmonary fibrosis and lung tumours. Mechanistically, Cd can induce oxidative stress and mediate cell-signalling pathways that are involved in inflammation.This in vivo study aimed at investigating pulmonary molecular effects of NPs doped with Cd (NP-Cd, 1 mg/animal) compared to soluble CdCl2 (400 μg/animal), in Sprague Dawley rats treated intra-tracheally, 7 and 30 days after administration. NPs of silica containing Cd salt were prepared starting from commercial nano-size silica powder (HiSil™ T700 Degussa) with average pore size of 20 nm and surface area of 240 m2/g. Toxicogenomic analysis was performed by the DNA microarray technology (using Agilent Whole Rat Genome Microarray 4×44K) to evaluate changes in gene expression of the entire genome. These findings indicate that the whole genome analysis may represent a valuable approach to assess the whole spectrum of biological responses to cadmium containing nanomaterials.

Low-voltage tunable color in full visible region using ferroelectric liquid-crystal-doped cholesteric liquid-crystal smart materials

NASA Astrophysics Data System (ADS)

Lin, Jia-De; Lin, Jyun-Wei; Lee, Chia-Rong

2018-02-01

Electrical tuning of photonic bandgap (PBG) of cholesteric liquid crystal (CLC) without deformation within the entire visible region at low voltages is not easy to achieve. This study demonstrates low-voltage-tunable PBG in full visible region with less deformation of the PBG based on smart materials of ferroelectric liquid crystal doped CLC (FLC-CLC) integrating with electrothermal film heaters. Experimental results show that the reflective color of the FLC-CLC can be low-voltage-tuned through entire visible region. The induced temperature change is induced by electrically heating the electrothermal film heaters at low voltages at near the smectic-CLC transition temperature. Coaxial electrospinning can be used to develop smart fibrous devices with FLC/CLC-core and polymer-shell which color is tunable in full visible region at low voltages.

Thermoelectric Properties of In-Doped Cu2ZnGeSe4

NASA Astrophysics Data System (ADS)

Chetty, R.; Bali, A.; Femi, O. E.; Chattopadhyay, K.; Mallik, R. C.

2016-03-01

Recently, much research has been focused on finding new thermoelectric materials. Cu-based quaternary chalcogenides that belong to A2BCD4 (A = Cu; B = Zn, Cd; C = Sn, Ge; D = S, Se, Te) are wide band gap materials and one of the potential thermoelectric materials due to their complex crystal structures. In this study, In-doped quaternary compounds Cu2ZnGe1- x In x Se4 ( x = 0, 0.025, 0.05, 0.075, 0.1) were prepared by a solid state synthesis method. Powder x-ray diffraction patterns of all the samples showed a tetragonal crystal structure (space group I- 42m) of the main phase with a trace amount of impurity phases, which was further confirmed by Rietveld analysis. The elemental composition of all the samples showed a slight deviation from the nominal composition with the presence of secondary phases. All the transport properties were measured in the temperature range 373-673 K. The electrical resistivity of all the samples initially decreased up to ˜470 K and then increased with increase in temperature upto 673 K, indicating the transition from semiconducting to metallic behavior. Positive Seebeck coefficients for all the samples revealed that holes are the majority carriers in the entire temperature range. The substitution of In3+ on Ge4+ introduces holes and results in the decrease of resistivity as well as the Seebeck coefficient, thereby leading to the optimization of the power factor. The lattice thermal conductivity of all the samples decreased with increasing temperature, indicating the presence of phonon-phonon scattering. As a result, the thermoelectric figure of merit ( zT) of the doped sample showed an increase as compared to the undoped compound.

Site-selective substitutional doping with atomic precision on stepped Al (111) surface by single-atom manipulation

PubMed Central

2014-01-01

In fabrication of nano- and quantum devices, it is sometimes critical to position individual dopants at certain sites precisely to obtain the specific or enhanced functionalities. With first-principles simulations, we propose a method for substitutional doping of individual atom at a certain position on a stepped metal surface by single-atom manipulation. A selected atom at the step of Al (111) surface could be extracted vertically with an Al trimer-apex tip, and then the dopant atom will be positioned to this site. The details of the entire process including potential energy curves are given, which suggests the reliability of the proposed single-atom doping method. PMID:24899871

Site-selective substitutional doping with atomic precision on stepped Al (111) surface by single-atom manipulation.

PubMed

Chen, Chang; Zhang, Jinhu; Dong, Guofeng; Shao, Hezhu; Ning, Bo-Yuan; Zhao, Li; Ning, Xi-Jing; Zhuang, Jun

2014-01-01

In fabrication of nano- and quantum devices, it is sometimes critical to position individual dopants at certain sites precisely to obtain the specific or enhanced functionalities. With first-principles simulations, we propose a method for substitutional doping of individual atom at a certain position on a stepped metal surface by single-atom manipulation. A selected atom at the step of Al (111) surface could be extracted vertically with an Al trimer-apex tip, and then the dopant atom will be positioned to this site. The details of the entire process including potential energy curves are given, which suggests the reliability of the proposed single-atom doping method.

Relaxation of photoexcitations in polaron-induced magnetic microstructures

NASA Astrophysics Data System (ADS)

Köhler, Thomas; Rajpurohit, Sangeeta; Schumann, Ole; Paeckel, Sebastian; Biebl, Fabian R. A.; Sotoudeh, Mohsen; Kramer, Stephan C.; Blöchl, Peter E.; Kehrein, Stefan; Manmana, Salvatore R.

2018-06-01

We investigate the evolution of a photoexcitation in correlated materials over a wide range of time scales. The system studied is a one-dimensional model of a manganite with correlated electron, spin, orbital, and lattice degrees of freedom, which we relate to the three-dimensional material Pr1 -xCaxMnO3 . The ground-state phases for the entire composition range are determined and rationalized by a coarse-grained polaron model. At half doping a pattern of antiferromagnetically coupled Zener polarons is realized. Using time-dependent density-matrix renormalization group (tDMRG), we treat the electronic quantum dynamics following the excitation. The emergence of quasiparticles is addressed, and the relaxation of the nonequilibrium quasiparticle distribution is investigated via a linearized quantum-Boltzmann equation. Our approach shows that the magnetic microstructure caused by the Zener polarons leads to an increase of the relaxation times of the excitation.

Ultralow-frequency-noise stabilization of a laser by locking to an optical fiber-delay line.

PubMed

Kéfélian, Fabien; Jiang, Haifeng; Lemonde, Pierre; Santarelli, Giorgio

2009-04-01

We report the frequency stabilization of an erbium-doped fiber distributed-feedback laser using an all-fiber-based Michelson interferometer of large arm imbalance. The interferometer uses a 1 km SMF-28 optical fiber spool and an acousto-optic modulator allowing heterodyne detection. The frequency-noise power spectral density is reduced by more than 40 dB for Fourier frequencies ranging from 1 Hz to 10 kHz, corresponding to a level well below 1 Hz2/Hz over the entire range; it reaches 10(-2) Hz2/Hz at 1 kHz. Between 40 Hz and 30 kHz, the frequency noise is shown to be comparable to the one obtained by Pound-Drever-Hall locking to a high-finesse Fabry-Perot cavity. Locking to a fiber delay line could consequently represent a reliable, simple, and compact alternative to cavity stabilization for short-term linewidth reduction.

Comprehensive phase diagram of two-dimensional space charge doped Bi2Sr2CaCu2O8+x.

PubMed

Sterpetti, Edoardo; Biscaras, Johan; Erb, Andreas; Shukla, Abhay

2017-12-12

The phase diagram of hole-doped high critical temperature superconductors as a function of doping and temperature has been intensively studied with chemical variation of doping. Chemical doping can provoke structural changes and disorder, masking intrinsic effects. Alternatively, a field-effect transistor geometry with an electrostatically doped, ultra-thin sample can be used. However, to probe the phase diagram, carrier density modulation beyond 10 14  cm -2 and transport measurements performed over a large temperature range are needed. Here we use the space charge doping method to measure transport characteristics from 330 K to low temperature. We extract parameters and characteristic temperatures over a large doping range and establish a comprehensive phase diagram for one-unit-cell-thick BSCCO-2212 as a function of doping, temperature and disorder.

Strong correlation induced charge localization in antiferromagnets

PubMed Central

Zhu, Zheng; Jiang, Hong-Chen; Qi, Yang; Tian, Chushun; Weng, Zheng-Yu

2013-01-01

The fate of a hole injected in an antiferromagnet is an outstanding issue of strongly correlated physics. It provides important insights into doped Mott insulators closely related to high-temperature superconductivity. Here, we report a systematic numerical study of t-J ladder systems based on the density matrix renormalization group. It reveals a surprising result for the single hole's motion in an otherwise well-understood undoped system. Specifically, we find that the common belief of quasiparticle picture is invalidated by the self-localization of the doped hole. In contrast to Anderson localization caused by disorders, the charge localization discovered here is an entirely new phenomenon purely of strong correlation origin. It results from destructive quantum interference of novel signs picked up by the hole, and since the same effect is of a generic feature of doped Mott physics, our findings unveil a new paradigm which may go beyond the single hole doped system. PMID:24002668

Influence of bis-thiourea nickel nitrate on the structural, optical, electrical, thermal and mechanical behavior of a KDP single crystal for NLO applications

NASA Astrophysics Data System (ADS)

Rasal, Y. B.; Shaikh, R. N.; Shirsat, M. D.; Kalainathan, S.; Hussaini, S. S.

2017-03-01

A single crystal of bis-thiourea nickel nitrate (BTNN) doped potassium dihydrogen phosphate (KDP) has been grown from solution at room temperature by a slow evaporation technique. The cell parameters of the grown crystals were determined using single crystal x-ray diffraction analysis. The different functional groups of the grown crystal were confirmed using Fourier transform infrared analysis. The improved optical parameters of the grown crystal have been evaluated in the range of 200-900 nm using UV-visible spectral analysis. The grown crystal was transparent in the entire visible region and the band gap value was found to be 4.96 eV. The influence of BTNN on the third order nonlinear optical properties of KDP crystal has been investigated by means of the Z-scan technique. The second harmonic generation (SHG) efficiency of grown crystal measured using a Nd-YAG laser is 1.98 times higher than that of pure KDP. The third order nonlinear optical susceptibility (χ 3) and nonlinear absorption coefficient (β) of BTNN doped KDP crystal is found to be 1.77  ×  10-5 esu and 5.57  ×  10-6 cm W-1 respectively. The laser damage threshold (LDT) energy for the grown crystal has been measured by using a Q-switched Nd:YAG laser source. The bis-thiourea nickel nitrate shows authoritative impact on the dielectric properties of doped crystal. The influence of bis-thiourea nickel nitrate on the mechanical behavior of KDP crystal has been investigated using Vickers microhardness intender. The thermal behavior of BTNN doped KDP crystal has been analyzed by TGA/DTA analysis.

Magnetization of La2-xSrxNiO4+δ (0⩽x⩽0.5) : Spin-glass and memory effects

NASA Astrophysics Data System (ADS)

Freeman, P. G.; Boothroyd, A. T.; Prabhakaran, D.; Lorenzana, J.

2006-01-01

We have studied the magnetization of a series of spin-charge-ordered La2-xSrxNiO4+δ single crystals with 0⩽x⩽0.5 . For fields applied parallel to the ab plane there is a large irreversibility below a temperature TF1˜50K and a smaller irreversibility that persists up to near the charge-ordering temperature. We observed memory effects in the thermoremnant magnetization across the entire doping range. We found that these materials retain a memory of the temperature at which an external field was removed and that there is a pronounced increase in the thermoremnant magnetization when the system is warmed through a spin reorientation transition.

Investigations of different doping concentration of phosphorus and boron into silicon substrate on the variable temperature Raman characteristics

NASA Astrophysics Data System (ADS)

Li, Xiaoli; Ding, Kai; Liu, Jian; Gao, Junxuan; Zhang, Weifeng

2018-01-01

Different doped silicon substrates have different device applications and have been used to fabricate solar panels and large scale integrated circuits. The thermal transport in silicon substrates are dominated by lattice vibrations, doping type, and doping concentration. In this paper, a variable-temperature Raman spectroscopic system is applied to record the frequency and linewidth changes of the silicon peak at 520 cm-1 in five chips of silicon substrate with different doping concentration of phosphorus and boron at the 83K to 1473K temperature range. The doping has better heat sensitive to temperature on the frequency shift over the low temperature range from 83K to 300K but on FWHM in high temperature range from 300K to 1473K. The results will be helpful for fundamental study and practical applications of silicon substrates.

Effects of single atom doping on the ultrafast electron dynamics of M1Au24(SR)18 (M = Pd, Pt) nanoclusters

NASA Astrophysics Data System (ADS)

Zhou, Meng; Qian, Huifeng; Sfeir, Matthew Y.; Nobusada, Katsuyuki; Jin, Rongchao

2016-03-01

Atomically precise, doped metal clusters are receiving wide research interest due to their synergistic properties dependent on the metal composition. To understand the electronic properties of doped clusters, it is highly desirable to probe the excited state behavior. Here, we report the ultrafast relaxation dynamics of doped M1@Au24(SR)18 (M = Pd, Pt; R = CH2CH2Ph) clusters using femtosecond visible and near infrared transient absorption spectroscopy. Three relaxation components are identified for both mono-doped clusters: (1) sub-picosecond relaxation within the M1Au12 core states; (2) core to shell relaxation in a few picoseconds; and (3) relaxation back to the ground state in more than one nanosecond. Despite similar relaxation pathways for the two doped nanoclusters, the coupling between the metal core and surface ligands is accelerated by over 30% in the case of the Pt dopant compared with the Pd dopant. Compared to Pd doping, the case of Pt doping leads to much more drastic changes in the steady state and transient absorption of the clusters, which indicates that the 5d orbitals of the Pt atom are more strongly mixed with Au 5d and 6s orbitals than the 4d orbitals of the Pd dopant. These results demonstrate that a single foreign atom can lead to entirely different excited state spectral features of the whole cluster compared to the parent Au25(SR)18 cluster. The detailed excited state dynamics of atomically precise Pd/Pt doped gold clusters help further understand their properties and benefit the development of energy-related applications.Atomically precise, doped metal clusters are receiving wide research interest due to their synergistic properties dependent on the metal composition. To understand the electronic properties of doped clusters, it is highly desirable to probe the excited state behavior. Here, we report the ultrafast relaxation dynamics of doped M1@Au24(SR)18 (M = Pd, Pt; R = CH2CH2Ph) clusters using femtosecond visible and near infrared transient absorption spectroscopy. Three relaxation components are identified for both mono-doped clusters: (1) sub-picosecond relaxation within the M1Au12 core states; (2) core to shell relaxation in a few picoseconds; and (3) relaxation back to the ground state in more than one nanosecond. Despite similar relaxation pathways for the two doped nanoclusters, the coupling between the metal core and surface ligands is accelerated by over 30% in the case of the Pt dopant compared with the Pd dopant. Compared to Pd doping, the case of Pt doping leads to much more drastic changes in the steady state and transient absorption of the clusters, which indicates that the 5d orbitals of the Pt atom are more strongly mixed with Au 5d and 6s orbitals than the 4d orbitals of the Pd dopant. These results demonstrate that a single foreign atom can lead to entirely different excited state spectral features of the whole cluster compared to the parent Au25(SR)18 cluster. The detailed excited state dynamics of atomically precise Pd/Pt doped gold clusters help further understand their properties and benefit the development of energy-related applications. Electronic supplementary information (ESI) available: The pump dependent transient absorption spectra and the corresponding global analysis results. See DOI: 10.1039/c6nr01008c

Influence of the doping level on the porosity of silicon nanowires prepared by metal-assisted chemical etching

NASA Astrophysics Data System (ADS)

Geyer, Nadine; Wollschläger, Nicole; Fuhrmann, Bodo; Tonkikh, Alexander; Berger, Andreas; Werner, Peter; Jungmann, Marco; Krause-Rehberg, Reinhard; Leipner, Hartmut S.

2015-06-01

A systematic method to control the porosity of silicon nanowires is presented. This method is based on metal-assisted chemical etching (MACE) and takes advantage of an HF/H2O2 etching solution and a silver catalyst in the form of a thin patterned film deposited on a doped silicon wafer. It is found that the porosity of the etched nanowires can be controlled by the doping level of the wafer. For low doping concentrations, the wires are primarily crystalline and surrounded by only a very thin layer of porous silicon (pSi) layer, while for highly doped silicon, they are porous in their entire volume. We performed a series of controlled experiments to conclude that there exists a well-defined critical doping concentration separating the crystalline and porous regimes. Furthermore, transmission electron microscopy investigations showed that the pSi has also a crystalline morphology on a length scale smaller than the pore size, determined from positron annihilation lifetime spectroscopy to be mesoscopic. Based on the experimental evidence, we devise a theoretical model of the pSi formation during MACE and apply it for better control of the nanowire morphology.

Absorption Spectroscopy Analysis of Calcium-Phosphate Glasses Highly Doped with Monovalent Copper.

PubMed

Jiménez, José A

2016-06-03

CaO-P2 O5 glasses with high concentrations of monovalent copper ions were prepared by a simple melt-quench method through CuO and SnO co-doping. Spectroscopic characterization was carried out by optical absorption with the aim of analyzing the effects of Cu(+) ions on the optical band-gap energies, which were estimated on the basis of indirect-allowed transitions. The copper(I) content is estimated in the CuO/SnO-containing glasses after the assessment of the concentration dependence of Cu(2+) absorption in the visible region for CuO singly doped glasses. An exponential dependence of the change in optical band gaps (relative to the host) with Cu(+) concentration is inferred up to about 10 mol %. However, the entire range is divided into two distinct linear regions that are characterized by different rates of change with respect to concentration: 1) below 5 mol %, where the linear dependence presents a relatively high magnitude of the slope; and 2) from 5-10 mol %, where a lower magnitude of the slope is manifested. With increasing concentration, the mean Cu(+) -Cu(+) interionic distance decreases, thereby decreasing the sensitivity of monovalent copper for light absorption. The decrease in optical band-gap energies is ultimately shown to follow a linear dependence with the interionic distance, suggesting the potential of the approach to gauge the concentration of monovalent copper straightforwardly in amorphous hosts. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Effect of heavy-ion irradiation on London penetration depth in overdoped Ba(Fe1-xCox)2As2

NASA Astrophysics Data System (ADS)

Murphy, J.; Tanatar, M. A.; Kim, Hyunsoo; Kwok, W.; Welp, U.; Graf, D.; Brooks, J. S.; Bud'ko, S. L.; Canfield, P. C.; Prozorov, R.

2013-08-01

Irradiation with 1.4 GeV 208Pb ions was used to induce artificial disorder in single crystals of iron-arsenide superconductor Ba(Fe1-xCox)2As2 and to study its effects on the temperature-dependent London penetration depth and transport properties. A study was undertaken on overdoped single crystals with x=0.108 and x=0.127 characterized by notable modulation of the superconducting gap. Irradiation corresponding to the matching fields of Bϕ=6 T and 6.5 T with doses 2.22×1011 d/cm2 and 2.4×1011 d/cm2, respectively, suppresses the superconducting Tc by approximately 0.3 to 1 K. The variation of the low-temperature penetration depth in both pristine and irradiated samples is well described by the power law Δλ(T)=ATn. Irradiation increases the magnitude of the prefactor A and decreases the exponent n, similar to the effect of irradiation in optimally-doped samples. This finding supports universal s± pairing in Ba(Fe1-xCox)2As2 compounds for the entire Co doping range.

Room temperature ferromagnetism of nanocrystalline Nd1.90Ni0.10O3-δ

NASA Astrophysics Data System (ADS)

Sarkar, B. J.; Mandal, J.; Dalal, M.; Bandyopadhyay, A.; Chakrabarti, P. K.

2018-05-01

Nanocrystalline sample of Ni2+ doped neodymium oxide (Nd1.90Ni0.10O3-δ, NNO) is synthesized by co-precipitation method. Analysis of X-ray diffraction (XRD) pattern by Rietveld refinement method confirms the desired phase of NNO and complete substitution of Ni2+ ions in the Nd2O3 lattice. Analyses of transmission electron microscopy (TEM) and Raman spectroscopy of NNO recorded at room temperature (RT) also substantiate this fact. Besides, no traces of impurities are found in the analyses of XRD, TEM and Raman data. Room temperature hysteresis loop of NNO suggests the presence of weak ferromagnetism (FM) in low field region ( 600 mT), but in high field region paramagnetism of the host is more prominent. Magnetization vs. temperature ( M- T) curve in the entire temperature range (300-5 K) is analyzed successfully by a combined equation generated from three-dimensional (3D) spin wave model and Curie-Weiss law, which suggests the presence of mixed paramagnetic phase together with ferromagnetic phase in the doped sample. The onset of magnetic ordering is analyzed by oxygen vacancy mediated F-center exchange (FCE) coupling mechanism.

Effect of solvents on sol-gel spin-coated nanostructured Al-doped ZnO thin films: a film for key optoelectronic applications

NASA Astrophysics Data System (ADS)

Kumar, K. Deva Arun; Valanarasu, S.; Kathalingam, A.; Ganesh, V.; Shkir, Mohd.; AlFaify, S.

2017-12-01

Aluminum-doped zinc oxide (AZO) thin films were deposited by sol-gel spin coating technique onto the glass substrates using different solvents such as 2-methoxyethanol, methanol, ethanol and isopropanol. Prepared films were characterized by XRD, Raman spectrum, SEM, UV-visible spectrophotometer, photoluminescence (PL) and electrical studies. XRD studies showed that all the prepared films are hexagonal wurtzite structure with polycrystalline nature oriented along (002) direction. SEM images showed uniform particles of size around 60 nm distributed regularly on to the entire glass substrate. EDX analysis confirmed the composition of grown AZO film consisting of Al, Zn and O elements. The prepared films showed highest optical transmittance 94% in the visible range and band gap 3.30 eV. PL spectra for all AZO films showed a strong UV emission peak at 387 nm. The AZO films prepared using isopropanol solvent showed high carrier concentration and low resistivity values as 1.72 × 1020 cm-3 and 2.90 × 10-3 Ω cm, respectively, with high figure of merit ( ϕ) value 8.42 × 10-3 (Ω/sq)-1.

Metal-insulator transition properties of sputtered silicon-doped and un-doped vanadium dioxide films at terahertz range

NASA Astrophysics Data System (ADS)

Zhang, Huafu; Wu, Zhiming; Niu, Ruihua; Wu, Xuefei; he, Qiong; Jiang, Yadong

2015-03-01

Silicon-doped and un-doped vanadium dioxide (VO2) films were synthesized on high-purity single-crystal silicon substrates by means of reactive direct current magnetron sputtering followed by thermal annealing. The structure, morphology and metal-insulator transition properties of silicon-doped VO2 films at terahertz range were measured and compared to those of un-doped VO2 films. X-ray diffraction and scanning electron microscopy indicated that doping the films with silicon significantly affects the preferred crystallographic orientation and surface morphologies (grain size, pores and characteristics of grain boundaries). The temperature dependence of terahertz transmission shows that the transition temperature, hysteresis width and transition sharpness greatly depend on the silicon contents while the transition amplitude was relatively insensitive to the silicon contents. Interestingly, the VO2 film doped with a silicon content of 4.6 at.% shows excellent terahertz switching characteristics, namely a small hysteresis width of 4.5 °C, a giant transmission modulation ratio of about 82% and a relatively low transition temperature of 56.1 °C upon heating. This work experimentally indicates that silicon doping can effectively control not only the surface morphology but also the metal-insulator transition characteristics of VO2 films at terahertz range.

Electron doping evolution of the neutron spin resonance in NaFe 1-xCo xAs

DOE PAGES

Zhang, Chenglin; Song, Yu; Carr, Scott Victor; ...

2016-05-31

Neutron spin resonance, a collective magnetic excitation coupled to superconductivity, is one of the most prominent features shared by a broad family of unconventional superconductors including copper oxides, iron pnictides, and heavy fermions. In this paper, we study the doping evolution of the resonances in NaFe 1–xCo xAs covering the entire superconducting dome. For the underdoped compositions, two resonance modes coexist. As doping increases, the low-energy resonance gradually loses its spectral weight to the high-energy one but remains at the same energy. By contrast, in the overdoped regime we only find one single resonance, which acquires a broader width inmore » both energy and momentum but retains approximately the same peak position even when T c drops by nearly a half compared to optimal doping. Furthermore, these results suggest that the energy of the resonance in electron overdoped NaFe 1–xCo xAs is neither simply proportional to T c nor the superconducting gap but is controlled by the multiorbital character of the system and doped impurity scattering effect.« less

The effect of Fe 3+ doping in Potassium Hydrogen Phthalate single crystals on structural and optical properties

NASA Astrophysics Data System (ADS)

Kumar, R. Ashok; Sivakumar, N.; Vizhi, R. Ezhil; Babu, D. Rajan

2011-02-01

This work investigates the influence of iron doping on Potassium Hydrogen Phthalate (KHP) single crystals by the slow evaporation solution growth technique. Factors such as evaporation rate, solution pH, solute concentration, super saturation limit, etc. are very important in order to have optically transparent single crystals. As part of the work, the effects of metallic salt FeCl 3 in different concentrations were analyzed with pure KHP. Powder X-ray diffraction suggests that the grown crystals are crystallized in the orthorhombic structure. The functional groups and the effect of moisture on the doped crystals can be analyzed with the help of a FTIR spectrum. The pure and doped KHP single crystal shows good transparency in the entire visible region, which is suitable for optical device applications. The refractive indices along b axis of pure and doped KHP single crystals were analyzed by the prism coupling technique. The emission of green light with the use of a Nd:YAG laser ( λ=1064 nm) confirmed the second harmonic generation properties of the grown crystals.

Wide range optofluidically tunable multimode interference fiber laser

NASA Astrophysics Data System (ADS)

Antonio-Lopez, J. E.; Sanchez-Mondragon, J. J.; LiKamWa, P.; May-Arrioja, D. A.

2014-08-01

An optofluidically tunable fiber laser based on multimode interference (MMI) effects with a wide tuning range is proposed and demonstrated. The tunable mechanism is based on an MMI fiber filter fabricated using a special fiber known as no-core fiber, which is a multimode fiber (MMF) without cladding. Therefore, when the MMI filter is covered by liquid the optical properties of the no-core fiber are modified, which allow us to tune the peak wavelength response of the MMI filter. Rather than applying the liquid on the entire no-core fiber, we change the liquid level along the no-core fiber, which provides a highly linear tuning response. In addition, by selecting the adequate refractive index of the liquid we can also choose the tuning range. We demonstrate the versatility of the optofluidically tunable MMI filter by wavelength tuning two different gain media, erbium doped fiber and a semiconductor optical amplifier, achieving tuning ranges of 55 and 90 nm respectively. In both cases, we achieve side-mode suppression ratios (SMSR) better than 50 dBm with output power variations of less than 0.76 dBm over the whole tuning range.

Effect of impurities of selenium and iron on the Anderson localization of 1T-TaS 2

NASA Astrophysics Data System (ADS)

Ōnuki, Y.; Inada, R.; Tanuma, S.

1980-01-01

The temperature dependence of electrical resistivities θ( T) of 1T-TaS 2, 1T-TaS 2- xSe x and 1T-Fe xTa 1- xS 2 is found to be θ( T) ∝ exp( T0/ T) 1/n in the temperature range of 4 K to the measured lowest temperature, 0.1 K, showing the variable range hopping of Anderson localized states. The n-value is nearly 3 for selenium doping and nearly 2 for non-doping and iron doping. The positive magnetoresistance, which is sizable only in the temperature range of 2 K to 0.5 K in 1T-TaS 2, is found to be remarkably enhanced by the selenium doping, while the tendency is reversed by the iron doping.

Strained-layer superlattice focal plane array having a planar structure

DOEpatents

Kim, Jin K [Albuquerque, NM; Carroll, Malcolm S [Albuquerque, NM; Gin, Aaron [Albuquerque, NM; Marsh, Phillip F [Lowell, MA; Young, Erik W [Albuquerque, NM; Cich, Michael J [Albuquerque, NM

2010-07-13

An infrared focal plane array (FPA) is disclosed which utilizes a strained-layer superlattice (SLS) formed of alternating layers of InAs and In.sub.xGa.sub.1-xSb with 0.ltoreq.x.ltoreq.0.5 epitaxially grown on a GaSb substrate. The FPA avoids the use of a mesa structure to isolate each photodetector element and instead uses impurity-doped regions formed in or about each photodetector for electrical isolation. This results in a substantially-planar structure in which the SLS is unbroken across the entire width of a 2-D array of the photodetector elements which are capped with an epitaxially-grown passivation layer to reduce or eliminate surface recombination. The FPA has applications for use in the wavelength range of 3-25 .mu.m.

Strained layer superlattice focal plane array having a planar structure

DOEpatents

Kim, Jin K; Carroll, Malcolm S; Gin, Aaron; Marsh, Phillip F; Young, Erik W; Cich, Michael J

2012-10-23

An infrared focal plane array (FPA) is disclosed which utilizes a strained-layer superlattice (SLS) formed of alternating layers of InAs and In.sub.xGa.sub.1-xSb with 0.ltoreq.x.ltoreq.0.5 epitaxially grown on a GaSb substrate. The FPA avoids the use of a mesa structure to isolate each photodetector element and instead uses impurity-doped regions formed in or about each photodetector for electrical isolation. This results in a substantially-planar structure in which the SLS is unbroken across the entire width of a 2-D array of the photodetector elements which are capped with an epitaxially-grown passivation layer to reduce or eliminate surface recombination. The FPA has applications for use in the wavelength range of 3-25 .mu.m.

Doping Evolution of Magnetic Order and Magnetic Excitations in (Sr1 -xLax)3Ir2O7

NASA Astrophysics Data System (ADS)

Lu, Xingye; McNally, D. E.; Moretti Sala, M.; Terzic, J.; Upton, M. H.; Casa, D.; Ingold, G.; Cao, G.; Schmitt, T.

2017-01-01

We use resonant elastic and inelastic x-ray scattering at the Ir-L3 edge to study the doping-dependent magnetic order, magnetic excitations, and spin-orbit excitons in the electron-doped bilayer iridate (Sr1 -xLax )3Ir2 O7 (0 ≤x ≤0.065 ). With increasing doping x , the three-dimensional long range antiferromagnetic order is gradually suppressed and evolves into a three-dimensional short range order across the insulator-to-metal transition from x =0 to 0.05, followed by a transition to two-dimensional short range order between x =0.05 and 0.065. Because of the interactions between the Jeff=1/2 pseudospins and the emergent itinerant electrons, magnetic excitations undergo damping, anisotropic softening, and gap collapse, accompanied by weakly doping-dependent spin-orbit excitons. Therefore, we conclude that electron doping suppresses the magnetic anisotropy and interlayer couplings and drives (Sr1 -xLax )3Ir2 O7 into a correlated metallic state with two-dimensional short range antiferromagnetic order. Strong antiferromagnetic fluctuations of the Jeff=1/2 moments persist deep in this correlated metallic state, with the magnon gap strongly suppressed.

Boron-doped nanocrystalline diamond microelectrode arrays monitor cardiac action potentials.

PubMed

Maybeck, Vanessa; Edgington, Robert; Bongrain, Alexandre; Welch, Joseph O; Scorsone, Emanuel; Bergonzo, Philippe; Jackman, Richard B; Offenhäusser, Andreas

2014-02-01

The expansion of diamond-based electronics in the area of biological interfacing has not been as thoroughly explored as applications in electrochemical sensing. However, the biocompatibility of diamond, large safe electrochemical window, stability, and tunable electronic properties provide opportunities to develop new devices for interfacing with electrogenic cells. Here, the fabrication of microelectrode arrays (MEAs) with boron-doped nanocrystalline diamond (BNCD) electrodes and their interfacing with cardiomyocyte-like HL-1 cells to detect cardiac action potentials are presented. A nonreductive means of structuring doped and undoped diamond on the same substrate is shown. The resulting BNCD electrodes show high stability under mechanical stress generated by the cells. It is shown that by fabricating the entire surface of the MEA with NCD, in patterns of conductive doped, and isolating undoped regions, signal detection may be improved up to four-fold over BNCD electrodes passivated with traditional isolators. Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Importance of doping and frustration in itinerant Fe-doped Cr 2Al

DOE PAGES

Susner, M. A.; Parker, D. S.; Sefat, A. S.

2015-05-12

We performed an experimental and theoretical study comparing the effects of Fe-doping of Cr 2Al, an antiferromagnet with a N el temperature of 670 K, with known results on Fe-doping of antiferromagnetic bcc Cr. (Cr 1-xFe x) 2Al materials are found to exhibit a rapid suppression of antiferromagnetic order with the presence of Fe, decreasing T N to 170 K for x=0.10. Antiferromagnetic behavior disappears entirely at x≈0.125 after which point increasing paramagnetic behavior is exhibited. Moreover, this is unlike the effects of Fe doping of bcc antiferromagnetic Cr, in which T N gradually decreases followed by the appearance ofmore » a ferromagnetic state. Theoretical calculations explain that the Cr 2Al-Fe suppression of magnetic order originates from two effects: the first is band narrowing caused by doping of additional electrons from Fe substitution that weakens itinerant magnetism; the second is magnetic frustration of the Cr itinerant moments in Fe-substituted Cr 2Al. In pure-phase Cr 2Al, the Cr moments have an antiparallel alignment; however, these are destroyed through Fe substitution and the preference of Fe for parallel alignment with Cr. This is unlike bulk Fe-doped Cr alloys in which the Fe anti-aligns with the Cr atoms, and speaks to the importance of the Al atoms in the magnetic structure of Cr 2Al and Fe-doped Cr 2Al.« less

NMR relaxation studies in doped poly-3-methylthiophene

NASA Astrophysics Data System (ADS)

Singh, K. Jugeshwar; Clark, W. G.; Gaidos, G.; Reyes, A. P.; Kuhns, P.; Thompson, J. D.; Menon, R.; Ramesh, K. P.

2015-05-01

NMR relaxation rates (1 /T1 ), magnetic susceptibility, and electrical conductivity studies in doped poly-3-methylthiophene are reported in this paper. The magnetic susceptibility data show the contributions from both Pauli and Curie spins, with the size of the Pauli term depending strongly on the doping level. Proton and fluorine NMR relaxation rates have been studied as a function of temperature (3-300 K) and field (for protons at 0.9, 9.0, 16.4, and 23.4 T, and for fluorine at 9.0 T). The temperature dependence of T1 is classified into three regimes: (a) For T <(g μBB /2 kB ) , the relaxation mechanism follows a modified Korringa relation due to electron-electron interactions and disorder. 1H - T1 is due to the electron-nuclear dipolar interaction in addition to the contact term. (b) For the intermediate temperature range (g μBB /2 kB )

Carbon Nanotube Conditioning: Ab Initio Simulations of the Effect of Interwall Interaction, Defects And Doping on the Electronic Properties of Carbon Nanotubes

NASA Astrophysics Data System (ADS)

Castillo, Matias Soto

Using carbon nanotubes for electrical conduction applications at the macroscale has been shown to be a difficult task for some time now, mainly, due to defects and impurities present, and lack of uniform electronic properties in synthesized carbon nanotube bundles. Some researchers have suggested that growing only metallic armchair nanotubes and arranging them with an ideal contact length could lead to the ultimate electrical conductivity; however, such recipe presents too high of a cost to pay. A different route is to learn to manage the defects, impurities, and the electronic properties of carbon nanotubes present in bundles grown by current state-of-the-art reactors, so that the electrical conduction of a bundle or even wire may be enhanced. In our work, we have used first-principles density functional theory calculations to study the effect of interwall interaction, defects and doping on the electronic structure of metallic, semi-metal and semiconducting single- and double-walled carbon nanotubes in order to gain a clear picture of their properties. The electronic band gap for a range of zigzag single-walled carbon nanotubes with chiral indices (5,0) - (30,0) was obtained. Their properties were used as a stepping stone in the study of the interwall interaction in double-walled carbon nanotubes, from which it was found that the electronic band gap depends on the type of inner and outer tubes, average diameter, and interwall distance. The effect of vacancy defects was also studied for a range of single-walled carbon nanotubes. It was found that the electronic band gap is reduced for the entire range of zigzag carbon nanotubes, even at vacancy defects concentrations of less than 1%. Finally, interaction potentials obtained via first-principles calculations were generalized by developing mathematical models for the purpose of running simulations at a larger length scale using molecular dynamics of the adsorption doping of diatomic iodine. An ideal adsorption site was found using a stochastic approach and with an adsorption energy higher than other values in the literature.

Flat Ge-doped optical fibres for food irradiation dosimetry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Noor, N. Mohd; Jusoh, M. A.; Razis, A. F. Abdull

Exposing food to radiation can improve hygiene quality, germination control, retard sprouting, and enhance physical attributes of the food product. To provide for food safety, radiation dosimetry in irradiated food is required. Herein, fabricated germanium doped (Ge-doped) optical fibres have been used. The fibres have been irradiated using a gamma source irradiator, doses in the range 1 kGy to 10 kGy being delivered. Using Ge-doped optical fibres of variable size, type and dopant concentration, study has been made of linearity, reproducibility, and fading. The thermoluminescence (TL) yield of the fibres were obtained and compared. The fibres exhibit a linear dosemore » response over the investigated range of doses, with mean reproducibility to within 2.69 % to 8.77 %, exceeding the dose range of all commercial dosimeters used in evaluating high doses for the food irradiation industry. TL fading of the Ge-doped flat fibres has been found to be < 13%.« less

Flat Ge-doped optical fibres for food irradiation dosimetry

NASA Astrophysics Data System (ADS)

Noor, N. Mohd; Jusoh, M. A.; Razis, A. F. Abdull; Alawiah, A.; Bradley, D. A.

2015-04-01

Exposing food to radiation can improve hygiene quality, germination control, retard sprouting, and enhance physical attributes of the food product. To provide for food safety, radiation dosimetry in irradiated food is required. Herein, fabricated germanium doped (Ge-doped) optical fibres have been used. The fibres have been irradiated using a gamma source irradiator, doses in the range 1 kGy to 10 kGy being delivered. Using Ge-doped optical fibres of variable size, type and dopant concentration, study has been made of linearity, reproducibility, and fading. The thermoluminescence (TL) yield of the fibres were obtained and compared. The fibres exhibit a linear dose response over the investigated range of doses, with mean reproducibility to within 2.69 % to 8.77 %, exceeding the dose range of all commercial dosimeters used in evaluating high doses for the food irradiation industry. TL fading of the Ge-doped flat fibres has been found to be < 13%.

Generalization of the van der Pauw Method: Analyzing Longitudinal Magnetoresistance Asymmetry to Quantify Doping Gradients

NASA Astrophysics Data System (ADS)

Grayson, M.; Zhou, Wang; Yoo, Heun-Mo; Prabhu-Gaunkar, S.; Tiemann, L.; Reichl, C.; Wegscheider, W.

A longitudinal magnetoresistance asymmetry (LMA) between a positive and negative magnetic field is known to occur in both the extreme quantum limit and the classical Drude limit in samples with a nonuniform doping density. By analyzing the current stream function in van der Pauw measurement geometry, it is shown that the electron density gradient can be quantitatively deduced from this LMA in the Drude regime. Results agree with gradients interpolated from local densities calibrated across an entire wafer, establishing a generalization of the van der Pauw method to quantify density gradients. Results will be shown of various semoconductor systems where this method is applied, from bulk doped semiconductors, to exfoliated 2D materials. McCormick Catalyst Award from Northwestern University, EECS Bridge Funding, and AFOSR FA9550-15-1-0247.

Using neutrons, X-rays and nuclear magnetism to determine the role of transition metal oxide inclusions on both glass structure and stability in automotive glass enamels.

PubMed

Bowron, Daniel T; Booth, Jonathan; Barrow, Nathan S; Sutton, Patricia; Johnson, Simon R

2018-05-23

Low levels of transition metal oxides in alkali borosilicate glass systems can drastically influence crystallisation and phase separation properties. We investigated the non-monotonic effect of manganese doping on suppressing crystallisation, and the influence on optical properties by iron oxide doping, in terms of local atomic structure. Structural models based on empirical potential structure refinement were generated from neutron and X-ray scattering data, and compared against multinuclear solid-state NMR. This revealed that a 2.5% manganese doping had a disruptive effect on the entire glass network, supressing crystallisation of an undesired bismuth silicate phase, and that iron species preferentially locate near borate tetrahedra. Preventing phase separation and controlling crystallisation behaviour of glass are critical to the ultimate properties of automotive glass enamels.

Quantum plasmons with optical-range frequencies in doped few-layer graphene

NASA Astrophysics Data System (ADS)

Shirodkar, Sharmila N.; Mattheakis, Marios; Cazeaux, Paul; Narang, Prineha; Soljačić, Marin; Kaxiras, Efthimios

2018-05-01

Although plasmon modes exist in doped graphene, the limited range of doping achieved by gating restricts the plasmon frequencies to a range that does not include the visible and infrared. Here we show, through the use of first-principles calculations, that the high levels of doping achieved by lithium intercalation in bilayer and trilayer graphene shift the plasmon frequencies into the visible range. To obtain physically meaningful results, we introduce a correction of the effect of plasmon interaction across the vacuum separating periodic images of the doped graphene layers, consisting of transparent boundary conditions in the direction perpendicular to the layers; this represents a significant improvement over the exact Coulomb cutoff technique employed in earlier works. The resulting plasmon modes are due to local field effects and the nonlocal response of the material to external electromagnetic fields, requiring a fully quantum mechanical treatment. We describe the features of these quantum plasmons, including the dispersion relation, losses, and field localization. Our findings point to a strategy for fine-tuning the plasmon frequencies in graphene and other two-dimensional materials.

Doping-dependent anisotropic superconducting gap in Na1-δ(Fe1-xCox)As from London penetration depth

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cho, Kyuil; Tanatar, Makariy A.; Spyrison, Nicholas

2012-07-30

The London penetration depth was measured in single crystals of self-doped Na1-δFeAs (from under doping to optimal doping, Tc from 14 to 27 K) and electron-doped Na(Fe1-xCox)As with x ranging from undoped, x=0, to overdoped, x=0.1. In all samples, the low-temperature variation of the penetration depth exhibits a power-law dependence, Δλ(T)=ATn, with the exponent that varies in a domelike fashion from n˜1.1 in the underdoped, reaching a maximum of n˜1.9 in the optimally doped, and decreasing again to n˜1.3 on the overdoped side. While the anisotropy of the gap structure follows a universal domelike evolution, the exponent at optimal doping,more » n˜1.9, is lower than in other charge-doped Fe-based superconductors (FeSCs). The full-temperature range superfluid density, ρs(T)=λ(0)/λ(T)2, at optimal doping is also distinctly different from other charge-doped FeSCs but is similar to isovalently substituted BaFe2(As1-xPx)2, believed to be a nodal pnictide at optimal doping. These results suggest that the superconducting gap in Na(Fe1-xCox)As is highly anisotropic even at optimal doping.« less

Room temperature ferromagnetism in transition metal-doped black phosphorous

NASA Astrophysics Data System (ADS)

Jiang, Xiaohong; Zhang, Xinwei; Xiong, Fang; Hua, Zhenghe; Wang, Zhihe; Yang, Shaoguang

2018-05-01

High pressure high temperature synthesis of transition metal (TM = V, Cr, Mn, Fe, Co, Ni, and Cu) doped black phosphorus (BP) was performed. Room temperature ferromagnetism was observed in Cr and Mn doped BP samples. X-ray diffraction and Raman measurements revealed pure phase BP without any impurity. Transport measurements showed us semiconducting character in 5 at. % doped BP samples Cr5%P95% and Mn5%P95%. The magnetoresistance (MR) studies presented positive MR in the relatively high temperature range and negative MR in the low temperature range. Compared to that of pure BP, the maximum MR was enhanced in Cr5%P95%. However, paramagnetism was observed in V, Fe, Co, Ni, and Cu doped BP samples.

Efficient hybrid white polymer light-emitting devices with electroluminescence covered the entire visible range and reduced efficiency roll-off

NASA Astrophysics Data System (ADS)

Hu, Sujun; Zhu, Minrong; Zou, Qinghua; Wu, Hongbin; Yang, Chuluo; Wong, Wai-Yeung; Yang, Wei; Peng, Junbiao; Cao, Yong

2012-02-01

We report efficient hybrid white polymer light emitting devices (WPLEDs) fabricated via simple solution-proceeded process from a newly synthesized wide band-gap fluorene-co-dibenzothiophene-S,S-dioxide copolymer, which dually function as fluorescent blue emitter and host material for electrophosphorescent sky-blue, yellow, and saturated-red dyes. The Commission Internationale d'Énclairage coordinates of the best devices are (0.356, 0.334), with electroluminescence covered the entire visible light spectrum from 400 to 780 nm, resulting in a high color rendering index of 90. Incorporation of a bilayer electrode consisting of water/alcohol-soluble conjugated polymer and Al as electron-injection cathode boosts an enhancement of 50% in device efficiency, leading to external quantum efficiency of 12.6%, and peak power efficiency of 21.4 l m W-1 as measured in an integrating sphere. Both the efficiency and the color quality of the obtained device are ranking among one of the highest values for WPLEDs reported to date. Furthermore, as compared with those all-phosphorescent WPLEDs, the hybrid WPLEDs studied here exhibit a significantly reduced efficiency roll-off due to the very low doping concentration.

Effects of single atom doping on the ultrafast electron dynamics of M1Au24(SR)18 (M = Pd, Pt) nanoclusters.

PubMed

Zhou, Meng; Qian, Huifeng; Sfeir, Matthew Y; Nobusada, Katsuyuki; Jin, Rongchao

2016-04-07

Atomically precise, doped metal clusters are receiving wide research interest due to their synergistic properties dependent on the metal composition. To understand the electronic properties of doped clusters, it is highly desirable to probe the excited state behavior. Here, we report the ultrafast relaxation dynamics of doped M1@Au24(SR)18 (M = Pd, Pt; R = CH2CH2Ph) clusters using femtosecond visible and near infrared transient absorption spectroscopy. Three relaxation components are identified for both mono-doped clusters: (1) sub-picosecond relaxation within the M1Au12 core states; (2) core to shell relaxation in a few picoseconds; and (3) relaxation back to the ground state in more than one nanosecond. Despite similar relaxation pathways for the two doped nanoclusters, the coupling between the metal core and surface ligands is accelerated by over 30% in the case of the Pt dopant compared with the Pd dopant. Compared to Pd doping, the case of Pt doping leads to much more drastic changes in the steady state and transient absorption of the clusters, which indicates that the 5d orbitals of the Pt atom are more strongly mixed with Au 5d and 6s orbitals than the 4d orbitals of the Pd dopant. These results demonstrate that a single foreign atom can lead to entirely different excited state spectral features of the whole cluster compared to the parent Au25(SR)18 cluster. The detailed excited state dynamics of atomically precise Pd/Pt doped gold clusters help further understand their properties and benefit the development of energy-related applications.

Effects of single atom doping on the ultrafast electron dynamics of M 1Au 24(SR) 18 (M = Pd, Pt) nanoclusters

DOE PAGES

Zhou, Meng; Qian, Huifeng; Sfeir, Matthew Y.; ...

2016-02-29

Atomically precise, doped metal clusters are receiving wide research interest due to their synergistic properties dependent on the metal composition. To understand the electronic properties of doped clusters, it is highly desirable to probe the excited state behavior. Here, we report the ultrafast relaxation dynamics of doped M 1@Au 24(SR) 18 (M = Pd, Pt; R = CH 2CH 2Ph) clusters using femtosecond visible and near infrared transient absorption spectroscopy. Three relaxation components are identified for both mono-doped clusters: (1) sub-picosecond relaxation within the M 1Au 12 core states; (2) core to shell relaxation in a few picoseconds; and (3)more » relaxation back to the ground state in more than one nanosecond. Despite similar relaxation pathways for the two doped nanoclusters, the coupling between the metal core and surface ligands is accelerated by over 30% in the case of the Pt dopant compared with the Pd dopant. Compared to Pd doping, the case of Pt doping leads to much more drastic changes in the steady state and transient absorption of the clusters, which indicates that the 5d orbitals of the Pt atom are more strongly mixed with Au 5d and 6s orbitals than the 4d orbitals of the Pd dopant. These results demonstrate that a single foreign atom can lead to entirely different excited state spectral features of the whole cluster compared to the parent Au 25(SR) 18 cluster. As a result, the detailed excited state dynamics of atomically precise Pd/Pt doped gold clusters help further understand their properties and benefit the development of energy-related applications.« less

Temperature independent quantum well FET with delta channel doping

NASA Technical Reports Server (NTRS)

Young, P. G.; Mena, R. A.; Alterovitz, S. A.; Schacham, S. E.; Haugland, E. J.

1992-01-01

A temperature independent device is presented which uses a quantum well structure and delta doping within the channel. The device requires a high delta doping concentration within the channel to achieve a constant Hall mobility and carrier concentration across the temperature range 300-1.4 K. Transistors were RF tested using on-wafer probing and a constant G sub max and F sub max were measured over the temperature range 300-70 K.

Effect of heavy-ion irradiation on London penetration depth in overdoped Ba(Fe 1 - x Co x ) 2 As 2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Murphy, J.; Tanatar, M. A.; Kim, Hyunsoo

2013-08-01

Irradiation with 1.4 GeV 208 Pb ions was used to induce artificial disorder in single crystals of iron-arsenide superconductor Ba(Fe 1 - x Co x ) 2 As 2 and to study its effects on the temperature-dependent London penetration depth and transport properties. A study was undertaken on overdoped single crystals with x = 0.108 and x = 0.127 characterized by notable modulation of the superconducting gap. Irradiation corresponding to the matching fields of B Φ = 6 T and 6.5 T with doses 2.22 × 10 11 d /cm 2 and 2.4 × 10 11 d /cm 2 ,more » respectively, suppresses the superconducting T c by approximately 0.3 to 1 K. The variation of the low-temperature penetration depth in both pristine and irradiated samples is well described by the power law Δ λ ( T ) = A T n . Irradiation increases the magnitude of the prefactor A and decreases the exponent n , similar to the effect of irradiation in optimally-doped samples. This finding supports universal s ± pairing in Ba(Fe 1 - x Co x ) 2 As 2 compounds for the entire Co doping range.« less

Spin excitations used to probe the nature of exchange coupling in the magnetically ordered ground state of Pr 0.5 Ca 0.5 MnO 3

DOE PAGES

Ewings, R. A.; Perring, T. G.; Sikora, O.; ...

2016-07-06

We have used time-of-flight inelastic neutron scattering to measure the spin wave spectrum of the canonical half-doped manganite Pr 0.5Ca 0.5MnO 3 in its magnetic and orbitally ordered phase. Comparison of the data, which cover multiple Brillouin zones and the entire energy range of the excitations, with several different models shows that only the CE-type ordered state provides an adequate description of the magnetic ground state, provided interactions beyond nearest neighbor are included. We are able to rule out a ground state in which there exist pairs of dimerized spins which interact only with their nearest neighbors. The Zener polaronmore » ground state, which comprises strongly bound magnetic dimers, can be ruled out on the basis of gross features of the observed spin wave spectrum. A model with weaker dimerization reproduces the observed dispersion but can be ruled out on the basis of subtle discrepancies between the calculated and observed structure factors at certain positions in reciprocal space. Adding further neighbor interactions results in almost no dimerization, i.e. interpolating back to the CE model. These results are consistent with theoretical analysis of the degenerate double exchange model for half-doping.« less

Thermoelectric and Magnetic Properties of Ca0.98RE0.02MnO3- δ (RE = Sm, Gd, and Dy)

NASA Astrophysics Data System (ADS)

Bhaskar, Ankam; Liu, Chia-Jyi; Yuan, J. J.

2012-09-01

Polycrystalline samples of Ca0.98RE0.02MnO3- δ (RE = Sm, Gd, and Dy) have been prepared by conventional solid-state reactions and their properties measured at 300 K to 700 K. All samples were single phase with orthorhombic structure. The average valence and oxygen content of Ca0.98RE0.02MnO3- δ were determined by iodometric titration. Doping at the Ca site by rare-earth metals causes a strong decrease of electrical resistivity due to the creation of charge carrier content by Mn3+ in the Mn4+ matrix, as evidenced by iodometric titration results. The Seebeck coefficient of all the samples was negative, indicating that the predominant carriers are electrons over the entire temperature range. Among the doped samples, Ca0.98Dy0.02MnO3- δ had the highest dimensionless figure of merit of 0.073 at 612 K, representing an improvement of about 115% with respect to the undoped CaMnO3- δ sample at the same temperature. All the samples exhibited an antiferromagnetic transition with Néel temperature of around 120 K. Magnetization measurements indicated that Ca0.98RE0.02 MnO3- δ samples exhibited a high-spin state of Mn3+.

Characterization and photocatalytic performance evaluation of various metal ion-doped microstructured TiO2 under UV and visible light.

PubMed

Sahoo, Chittaranjan; Gupta, Ashok K

2015-01-01

Commercially available microcrystalline TiO2 was doped with silver, ferrous and ferric ion (1.0 mol %) using silver nitrate, ferrous sulfate and ferric nitrate solutions following the liquid impregnation technology. The catalysts prepared were characterised by FESEM, XRD, FTIR, DRS, particle size and micropore analysis. The photocatalytic activity of the prepared catalysts was tested on the degradation of two model dyes, methylene blue (3,7-bis (Dimethylamino)-phenothiazin-5-ium chloride, a cationic thiazine dye) and methyl blue (disodium;4-[4-[[4-(4-sulfonatoanilino)phenyl]-[4-(4-sulfonatophenyl)azaniumylidenecyclohexa-2,5-dien-1-ylidene]methyl]anilino]benzene sulfonate, an anionic triphenyl methane dye) under irradiation by UV and visible light in a batch reactor. The efficiency of the photocatalysts under UV and visible light was compared to ascertain the light range for effective utilization. The catalysts were found to have the anatase crystalline structure and their particle size is in a range of 140-250 nm. In the case of Fe(2+) doped TiO2 and Fe(3+) doped TiO2, there was a greater shift in the optical absorption towards the visible range. Under UV light, Ag(+) doped TiO2 was the most efficient catalyst and the corresponding decolorization was more than 99% for both the dyes. Under visible light, Fe(3+) doped TiO2 was the most efficient photocatalyst with more than 96% and 90% decolorization for methylene blue and methyl blue, respectively. The kinetics of the reaction under both UV and visible light was investigated using the Langmuir-Hinshelwood pseudo-first-order kinetic model. Kinetic measurements confirmed that, Ag(+) doped TiO2 was most efficient in the UV range, while Fe(3+) doped TiO2 was most efficient in the visible range.

Influence of electron doping on the ground state of (Sr 1-xLa x) 2IrO 4

DOE PAGES

Chen, Xiang; Hogan, Tom; Walkup, D.; ...

2015-08-17

The evolution of the electronic properties of electron-doped (Sr 1-xLa x) 2IrO 4 is experimentally explored as the doping limit of La is approached. As electrons are introduced, the electronic ground state transitions from a spin-orbit Mott phase into an electronically phase separated state, where long-range magnetic order vanishes beyond x = 0:02 and charge transport remains percolative up to the limit of La substitution (x =0:06). In particular, the electronic ground state remains inhomogeneous even beyond the collapse of the parent state's long-range antiferromagnetic order, while persistent short-range magnetism survives up to the highest La-substitution levels. Furthermore, as electronsmore » are doped into Sr 2IrO 4, we observe the appearance of a low temperature magnetic glass-like state intermediate to the complete suppression of antiferromagnetic order. Universalities and di erences in the electron-doped phase diagrams of single layer and bilayer Ruddlesden-Popper strontium iridates are discussed.« less

An afterword. HUMANING … (Anti-)DOPING; looking at "doping" sideways.

PubMed

Einstein, Stan

2014-07-01

This trek and quest explores a range of man-made anomalies and challenges which are rarely considered by their stakeholders in the complex, dynamic, nonlinear, multi-dimensionalities of both "doping" and antidoping, closure-driven certitudes.

Superconducting properties of under- and over-doped BaxK1‑xBiO3 perovskite oxide

NASA Astrophysics Data System (ADS)

Szczȩśniak, D.; Kaczmarek, A. Z.; Szczȩśniak, R.; Turchuk, S. V.; Zhao, H.; Drzazga, E. A.

2018-06-01

In this study, we investigate the thermodynamic properties of the BaxK1‑xBiO3 (BKBO) superconductor in the under- (x = 0.5) and over-doped (x = 0.7) regime, within the framework of the Migdal-Eliashberg formalism. The analysis is conducted to verify that the electron-phonon pairing mechanism is responsible for the induction of the superconducting phase in the mentioned compound. In particular, we show that BKBO is characterized by the relatively high critical value of the Coulomb pseudopotential, which changes with doping level and does not follow the Morel-Anderson model. In what follows, the corresponding superconducting band gap size and related dimensionless ratio are estimated to increase with the doping, in agreement with the experimental predictions. Moreover, the effective mass of electrons is found to take on high values in the entire doping and temperature region. Finally, the characteristic dimensionless ratios for the superconducting band gap, the critical magnetic field and the specific heat for the superconducting state are predicted to exceed the limits set within the Bardeen-Cooper-Schrieffer theory, suggesting pivotal role of the strong-coupling and retardation effects in the analyzed compound. Presented results supplement our previous investigations and account for the strong-coupling phonon-mediated character of the superconducting phase in BKBO at any doping level.

Effect of Mo-doping concentration on the physical behaviour of sprayed ZnO layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Reddy, T. Sreenivasulu; Reddy, M. Vasudeva; Reddy, K. T. Ramakrishna, E-mail: ktrkreddy@gmail.com

2015-06-24

Mo-doped zinc oxide layers (MZO) have been prepared on cleaned glass substrates by chemical spray pyrolysis technique by varying Mo-doping concentration in the range, 0 – 5 at. %. The X-ray diffraction studies revealed that all the as prepared layers were polycrystalline in nature and exhibited wurtzite structure. The layers prepared with lower Mo-doping concentration (<2 at. %) were preferably oriented along the (100) plane, whereas in the case of higher Mo-doping concentration (>2 at. %), the films showed the (002) plane as the dominant peak. The optical analysis indicated that all the layers had an average optical transmittance ofmore » 80% in the visible region and the evaluated band gap varied in the range, 3.28 - 3.50 eV.« less

THz emission of donor and acceptor doped GaAs/AlGaAs quantum well structures with inserted thin AlAs monolayer

NASA Astrophysics Data System (ADS)

van Dommelen, Paphavee; Daengngam, Chalongrat; Kalasuwan, Pruet

2018-04-01

In this paper, we explore THz range optical intersubband transition energies in a donor doped quantum well of a GaAs/AlGaAs system as a function of the insertion position of an AlAs monolayer in the GaAs quantum well. In simulated models, the optical transition energies between electron subband levels 1 and 2 were higher in the doped structure than in the undoped structure. This may be because the envelope wave function of the second electron subband strongly overlapped the envelope wave function of the first electron subband and influenced the optical intersubband transition between the two levels in the THz range. At different levels of bias voltage at the Schottky barrier on the donor doped structure, the electric field in the growth direction of the structure linearly increased the further away the AlAs monolayer was placed from the reference position. We also simulated the optical transition energies between acceptor energy levels of the acceptor doped structure as a function of the insertion position of the AlAs monolayer. The acceptor doped structure induced THz range emission whereas the undoped structure induced mid-IR emission.

An investigation of the Nb doping effect on structural, morphological, electrical and optical properties of spray deposited F doped SnO2 films

NASA Astrophysics Data System (ADS)

Turgut, G.; Keskenler, E. F.; Aydın, S.; Yılmaz, M.; Doǧan, S.; Düzgün, B.

2013-03-01

F and Nb + F co-doped SnO2 thin films were deposited on glass substrates by the spray pyrolysis method. The microstructural, morphological, electrical and optical properties of the 10 wt% F doped SnO2 (FTO) thin films were investigated specifically for niobium (Nb) doping in the range of 0-4 at.% with 1 at.% steps. As shown by the x-ray diffraction patterns, the films exhibited a tetragonal cassiterite structure with (200) preferential orientation. It was observed that grain sizes of the films for (200) and (301) peaks depended on the Nb doping concentration and varied in the range of 25.11-32.19 and 100.6-183.7 nm, respectively. The scanning electron microscope (SEM) micrographs showed that the FTO films were made of small pyramidal grains, while doubly doped films were made of small pyramidal grains and big polyhedron grains. From electrical studies, although 1 at.% Nb doped FTO films have the lowest sheet resistance and resistivity values, the highest figure-of-merit and optical band gap values obtained for FTO films were 16.2 × 10-2 Ω-1 and 4.21 eV, respectively. Also, infrared reflectivity values of the films were in the range of 97.39-98.98%. These results strongly suggest that these films are an attractive candidate for various optoelectronic applications and for photothermal conversion of solar energy.

Electronic self-organization in the single-layer manganite $$\\rm Pr_{1-x}Ca_{1+x}MnO4$$

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ye, Feng; Chi, Songxue; Fernandez-Baca, Jaime A

We use neutron scattering to investigate the doping evolution of the magnetic correlations in the single-layer manganitemore » $$\\rm Pr_{\\it 1-x}Ca_{\\it 1+x}MnO_4$$, away from the $x=0.5$ composition where the CE-type commensurate antiferromagnetic (AF) structure is stable. We find that short-range incommensurate spin correlations develop as the system is electron doped ($x<0.5$), which coexist with the CE-type AF order. This suggests that electron doping in this system induces an inhomogeneous electronic self-organization, where commensurate AF patches with $x=0.5$ are separated by electron-rich domain walls with short range magnetic correlations. This behavior is strikingly different than for the three-dimensional $$\\rm Pr_{\\it 1-x}Ca_{\\it x}MnO_3$$, where the long-range CE-type commensurate AF structure is stable over a wide range of electron or hole doping around $x=0.5$.« less

Impedance measurement of Cobalt doped ZnO Quantum dots

NASA Astrophysics Data System (ADS)

Tiwari, Ram; Kaphle, Amrit; Hari, Parameswar

We investigated structural, thermal and electrical properties of ZnO Quantum dots grown by precipitation method. QDs were spin coated on ITO and annealed at various temperatures ranging from 1000C to 300 0C. ZnO QDs were doped with cobalt for concentration ranging from 0-15%. XRD measurement showed increase in bond length, strain, dislocation density and Cell volume as the doping level varied from 0% to 15%. Impedance Spectroscopy measurements represented by Cole-Cole plot showed reduction in resistance as the cobalt doping concentration increased from 0-15%. Thermal activation energy was obtained by plotting resistivity Vs temperature for doped samples at temperatures from 1000C to 3000C. The thermal activation energy decreased from 85.13meV to 58.21meV as doping increased from 0-15%. Relaxation time was extracted by fitting data to RC model. Relaxation time varied from 61.57 ns to 3.76 ns as the cobalt concentration increased from 0% to 15%. We will also discuss applications of cobalt doped ZnO QDs on improving conversion efficiency of solar cells.

In silico optimization of phase-change materials for digital memories: a survey of first-row transition-metal dopants for Ge₂Sb₂Te₅.

PubMed

Skelton, J M; Elliott, S R

2013-05-22

Phase-change materials are the alloys at the heart of an emerging class of next-generation, non-volatile digital memory technologies. However, the widely studied Ge-Sb-Te system possesses several undesirable properties, and enhancing its properties, e.g. by doping, is an area of active research. Various first-row transition-metal dopants have been shown to impart useful property enhancements, but a systematic study of the entire period has yet to be undertaken, and little has been done to investigate their interaction with the host material at the atomic level. We have carried out first-principles computer simulations of the complete phase-change cycle in Ge2Sb2Te5 doped with each of the ten first-row transition metals. In this article, we present a comprehensive survey of the electronic, magnetic and optical properties of these doped materials. We discuss in detail their atomic-level structure, and relate the microscopic behaviours of the dopant atoms to their influence on the Ge2Sb2Te5 host. By considering an entire family of similar materials, we identify trends and patterns which might be used to predict suitable dopants for optimizing materials for specific phase-change applications. The computational method employed here is general, and this materials-discovery approach could be applied in the future to study other families of potential dopants for such materials.

First-principles research on the optical and electrical properties and mechanisms of In-doped ZnO

NASA Astrophysics Data System (ADS)

Hou, Qingyu; Xi, Dongmin; Li, Wenling; Jia, Xiaofang; Xu, Zhenchao

2018-05-01

The absorption spectra and conductivity of In-doped ZnO still exhibit differences. To resolve this contradiction, the ZnO supercell models with different In doping amounts and the Zn0.9375In0.0625(Zni)0.0625O supercell model were both constructed. When the geometrical structure of all the models was optimized, the GGA + U and GGA used to calculate the energy. In the range of In doping used in this study, the formation energy of In-doped ZnO under Zn-rich conditions is lower than that under O-rich conditions, thereby implying a more stability of In-doped ZnO under Zn-rich than that under O-rich. With the increased In doping content, the volume and the formation energy of the doped system increase, the doped systems become unstable, and doping becomes difficult. Furthermore, the band gaps are narrowed, and the red shift of absorption spectrum is enhanced. In the In doping amount ranging within 0.01389-0.05556, the electron effective mass decreases first and subsequently increases, and the electron concentration increases. The mobility and conductivity also increase first and subsequently decrease. These results are in accordance with the experimental results. The volume of Zn0.9375In0.0625(Zni)0.0625O with the coexistence of In replacing Zn and interstitial Zn is large. The band gap is widened and the absorption spectrum is blue-shifted in the UV region.

Direct Detection and Imaging of Low-Energy Electrons with Delta-Doped Charge-Coupled Devices

NASA Technical Reports Server (NTRS)

Nikzad, S.; Yu, Q.; Smith, A. L.; Jones, T. J.; Tombrello, T. A.; Elliott, S. T.

1998-01-01

We report the use fo delta-doped charge-coupled devices (CCDs) for direct detection of electrons in the 50-1500 eV energy range. These are the first measurements with a solid state device to detect electrons in this energy range.

Space infrared telescope facility wide field and diffraction limited array camera (IRAC)

NASA Technical Reports Server (NTRS)

Fazio, Giovanni G.

1988-01-01

The wide-field and diffraction limited array camera (IRAC) is capable of two-dimensional photometry in either a wide-field or diffraction-limited mode over the wavelength range from 2 to 30 microns with a possible extension to 120 microns. A low-doped indium antimonide detector was developed for 1.8 to 5.0 microns, detectors were tested and optimized for the entire 1.8 to 30 micron range, beamsplitters were developed and tested for the 1.8 to 30 micron range, and tradeoff studies of the camera's optical system performed. Data are presented on the performance of InSb, Si:In, Si:Ga, and Si:Sb array detectors bumpbonded to a multiplexed CMOS readout chip of the source-follower type at SIRTF operating backgrounds (equal to or less than 1 x 10 to the 8th ph/sq cm/sec) and temperature (4 to 12 K). Some results at higher temperatures are also presented for comparison to SIRTF temperature results. Data are also presented on the performance of IRAC beamsplitters at room temperature at both 0 and 45 deg angle of incidence and on the performance of the all-reflecting optical system baselined for the camera.

Study of electrical and magnetic properties of RE doped layered cobaltite thin films

NASA Astrophysics Data System (ADS)

Bapna, K.; Choudhary, R. J.; Phase, D. M.; Rawat, R.; Ahuja, B. L.

2018-05-01

Thin films of layered perovskites Sr1.5RE0.5CoO4 (RE = La, Gd) were grown on MgO (0 0 1) substrate using pulsed laser ablation method. Structural, electrical and magnetic properties of single phase oriented films were studied. Films reveal semiconducting behavior in the entire measured temperature range. The films show thermally activated behavior at high temperature regime, with a higher value of activation energy for SGCO than that for SLCO. The low temperature behavior is well fitted with 3D-variable range hopping mechanism. Both films showed negative magneto-resistance measured in temperature range of 10-200 K. The value of MR is large for SGCO film as compared to its bulk counterpart as well as SLCO film, suggesting its high potential in the spintronics applications. A pinch-shaped M-H behaviour as observed in both the films, suggests the presence of two-magnetic phases. Occurrence of pinch-shape behaviour is although in line with that of SLCO bulk counterpart, interestingly, it was absent in SGCO polycrystalline powder. It suggests major role of film growth kinetics in modifying the magnetic properties in cobaltites.

Water Retention and Rheology of Ti-doped, Synthetic Olivine

NASA Astrophysics Data System (ADS)

Faul, U.; Jackson, I.; Fitz Gerald, J. D.

2012-12-01

Upper mantle flow laws are currently based almost entirely on experiments with olivine from San Carlos in Arizona. Synthetically produced olivine enables the exploration of the effects of trace elements on the rheology. We have conducted a range of experiments in a gas medium apparatus with solution-gelation derived olivine that show that titanium is the most effective in binding water in the olivine structure. The FTIR signature of this structurally bound water is most similar to that of water-undersaturated natural olivine with absorption bands at 3575 and 3525 cm-1. Water added, titanium-free solgel contains little water after hotpressing and shows adsorption bands at wavenumbers near 3200 cm-1. Noble metal capsules such as Pt or AuPd, providing more oxidizing conditions, are more effective in retaining water. Experiments with NiFe-lined welded Pt capsules retain no more water than NiFe lined samples without Pt capsule. Water retention is, however, again dependent on trace element content, with Ti doped samples containing tens of ppm after hotpressing. By comparison undoped samples run under the same conditions contain little water, again with different FTIR spectra to Ti-doped samples. Our experiments suggest that Ti by itself, or with water contents at the FTIR detection limit enhances diffusion creep rates relative to undoped, dry solgel olivine. Water contents around 10 ppm in NiFe wrapped samples show an enhancement of strain rates of more than one order of magnitude. The addition of Ti, together with the presence of water, also enhances grain growth. For more coarse-grained samples in the dislocation creep regime the enhancement of the stain rate as a function of water content is approximately consistent with the flow laws of Hirth and Kohlstedt (2003).

Microscopic potential fluctuations in Si-doped AlGaN epitaxial layers with various AlN molar fractions and Si concentrations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kurai, Satoshi, E-mail: kurai@yamaguchi-u.ac.jp; Yamada, Yoichi; Miyake, Hideto

2016-01-14

Nanoscopic potential fluctuations of Si-doped AlGaN epitaxial layers with the AlN molar fraction varying from 0.42 to 0.95 and Si-doped Al{sub 0.61}Ga{sub 0.39}N epitaxial layers with Si concentrations of 3.0–37 × 10{sup 17 }cm{sup −3} were investigated by cathodoluminescence (CL) imaging combined with scanning electron microscopy. The spot CL linewidths of AlGaN epitaxial layers broadened as the AlN molar fraction was increased to 0.7, and then narrowed at higher AlN molar fractions. The experimental linewidths were compared with the theoretical prediction from the alloy broadening model. The trends displayed by our spot CL linewidths were consistent with calculated results at AlN molar fractionsmore » of less than about 0.60, but the spot CL linewidths were markedly broader than the calculated linewidths at higher AlN molar fractions. The dependence of the difference between the spot CL linewidth and calculated line broadening on AlN molar fraction was found to be similar to the dependence of reported S values, indicating that the vacancy clusters acted as the origin of additional line broadening at high AlN molar fractions. The spot CL linewidths of Al{sub 0.61}Ga{sub 0.39}N epitaxial layers with the same Al concentration and different Si concentrations were nearly constant in the entire Si concentration range tested. From the comparison of reported S values, the increase of V{sub Al} did not contribute to the linewidth broadening, unlike the case of the V{sub Al} clusters.« less

Colossal permittivity and the polarization mechanism of (Mg, Mn) co-doped LaGaO3 ceramics

NASA Astrophysics Data System (ADS)

Luo, Tingting; Liu, Zhifu; Zhang, Faqiang; Li, Yongxiang

2018-03-01

Mg and Mn co-doped LaGa0.7-xMgxMn0.3O3 (x = 0, 0.05, 0.10, 0.15) ceramics were prepared by a solid-state reaction method. The electrical properties of the LaGa0.7-xMgxMn0.3O3 ceramics were studied in detail by dielectric spectra, impedance spectra, and I-V characteristic analysis. Colossal permittivity up to 104 could be obtained across the frequency range up to 104 Hz. The impedance analysis of the co-doped LaGaO3 ceramics indicated that the Mott's variable range hopping (VRH) polarization should be the main origin of colossal permittivity. Mg and Mn co-doping suppressed the formation of Mn3+ and enhanced the VRH polarization, resulting in increased permittivity. Partial localization of electrons by Mg reduced the long-range electron hopping and led to the decrease in dielectric loss.

Electronic structure and optical properties of metal doped tetraphenylporphyrins

NASA Astrophysics Data System (ADS)

Shah, Esha V.; Roy, Debesh R.

2018-05-01

A density functional scrutiny on the structure, electronic and optical properties of metal doped tetraphenylporphyrins MTPP (M=Fe, Co, Ni) is performed. The structural stability of the molecules is evaluated based on the electronic parameters like HOMO-LUMO gap (HLG), chemical hardness (η) and binding energy of the central metal atom to the molecular frame etc. The computed UltraViolet-Visible (UV-Vis) optical absorption spectra for all the compounds are also compared. The molecular structures reported are the lowest energy configurations. The entire calculations are carried out with a widely reliable functional, viz. B3LYP with a popular basis set which includes a scaler relativistic effect, viz. LANL2DZ.

Field-induced thermal metal-to-insulator transition in underdoped La(2-x)Sr(x)CuO(4+delta).

PubMed

Hawthorn, D G; Hill, R W; Proust, C; Ronning, F; Sutherland, Mike; Boaknin, Etienne; Lupien, C; Tanatar, M A; Paglione, Johnpierre; Wakimoto, S; Zhang, H; Taillefer, Louis; Kimura, T; Nohara, M; Takagi, H; Hussey, N E

2003-05-16

The transport of heat and charge in cuprates was measured in single crystals of La(2-x)Sr(x)CuO(4+delta) (LSCO) across the doping phase diagram at low temperatures. In underdoped LSCO, the thermal conductivity is found to decrease with increasing magnetic field in the T-->0 limit, in striking contrast to the increase observed in all superconductors, including cuprates at higher doping. In heavily underdoped LSCO, where superconductivity can be entirely suppressed with an applied magnetic field, we show that a novel thermal metal-to-insulator transition takes place upon going from the superconducting state to the field-induced normal state.

One-dimensional pinning behavior in Co-doped BaFe2As2 thin films

NASA Astrophysics Data System (ADS)

Mishev, V.; Seeböck, W.; Eisterer, M.; Iida, K.; Kurth, F.; Hänisch, J.; Reich, E.; Holzapfel, B.

2013-12-01

Angle-resolved transport measurements revealed that planar defects dominate flux pinning in the investigated Co-doped BaFe2As2 thin film. For any given field and temperature, the critical current depends only on the angle between the crystallographic c-axis and the applied magnetic field but not on the angle between the current and the field. The critical current is therefore limited only by the in-plane component of the Lorentz force but independent of the out-of-plane component, which is entirely balanced by the pinning force exerted by the planar defects. This one-dimensional pinning behavior shows similarities and differences to intrinsic pinning in layered superconductors.

Analytical recursive method to ascertain multisite entanglement in doped quantum spin ladders

NASA Astrophysics Data System (ADS)

Roy, Sudipto Singha; Dhar, Himadri Shekhar; Rakshit, Debraj; SenDe, Aditi; Sen, Ujjwal

2017-08-01

We formulate an analytical recursive method to generate the wave function of doped short-range resonating valence bond (RVB) states as a tool to efficiently estimate multisite entanglement as well as other physical quantities in doped quantum spin ladders. We prove that doped RVB ladder states are always genuine multipartite entangled. Importantly, our results show that within specific doping concentration and model parameter regimes, the doped RVB state essentially characterizes the trends of genuine multiparty entanglement in the exact ground states of the Hubbard model with large on-site interactions, in the limit that yields the t -J Hamiltonian.

The thermoluminescence response of doped SiO2 optical fibres subjected to photon and electron irradiations.

PubMed

Hashim, S; Al-Ahbabi, S; Bradley, D A; Webb, M; Jeynes, C; Ramli, A T; Wagiran, H

2009-03-01

Modern linear accelerators, the predominant teletherapy machine in major radiotherapy centres worldwide, provide multiple electron and photon beam energies. To obtain reasonable treatment times, intense electron beam currents are achievable. In association with this capability, there is considerable demand to validate patient dose using systems of dosimetry offering characteristics that include good spatial resolution, high precision and accuracy. Present interest is in the thermoluminescence response and dosimetric utility of commercially available doped optical fibres. The important parameter for obtaining the highest TL yield during this study is to know the dopant concentration of the SiO2 fibre because during the production of the optical fibres, the dopants tend to diffuse. To achieve this aim, proton-induced X-ray emission (PIXE), which has no depth resolution but can unambiguously identify elements and analyse for trace elements with detection limits approaching microg/g, was used. For Al-doped fibres, the dopant concentration in the range 0.98-2.93 mol% have been estimated, with equivalent range for Ge-doped fibres being 0.53-0.71 mol%. In making central-axis irradiation measurements a solid water phantom was used. For 6-MV photons and electron energies in the range 6, 9 and 12 MeV, a source to surface distance of 100 cm was used, with a dose rate of 400 cGy/min for photons and electrons. The TL measurements show a linear dose-response over the delivered range of absorbed dose from 1 to 4 Gy. Fading was found to be minimal, less than 10% over five days subsequent to irradiation. The minimum detectable dose for 6-MV photons was found to be 4, 30 and 900 microGy for TLD-100 chips, Ge- and Al-doped fibres, respectively. For 6-, 9- and 12-MeV electron energies, the minimum detectable dose were in the range 3-5, 30-50 and 800-1400 microGy for TLD-100 chip, Ge-doped and Al-doped fibres, respectively.

Magneto-electronic phase separation in doped cobaltites

NASA Astrophysics Data System (ADS)

He, Chunyong

This thesis work mainly focuses on magneto-electronic phase separation (MEPS), an effect where chemically homogeneous materials display inhomogeneous magnetic and electronic properties. A model system La1-xSrxCoO3 (LSCO) is chosen for the study of MEPS. The doping evolution of MEPS in LSCO single crystals is extensively studied through complementary experimental techniques including heat capacity, small angle neutron scattering, magnetometry, and transport. It is found that there exists a finite doping range over which MEPS occurs. The doping range determined from different experimental techniques is found to be in good agreement. Also, this same doping range is reproduced by statistical simulations incorporating local compositional fluctuations. The excellent agreement between experimental data and statistical simulations leads to the conclusion that the MEPS in LSCO is driven solely by inevitable local compositional fluctuations at nanoscopic length scales. Such a conclusion indicates that nanoscopic MEPS is doping fluctuation-driven rather than electronically-driven in LSCO. The effect of microscopic magneto-electronic phase separation on electrical transport in LSCO is also examined. It is demonstrated (i) that the T = 0 metal-insulator transition can be understood within double exchange-modified percolation framework, and, (ii) that the onset of a phase-pure low T ferromagnetic state at high x has a profound effect on the high T transport. In addition, a new origin for finite spin Co ions in LaCoO3 is revealed via a Schottky Anomaly in the heat capacity, which was not previously known. Such a discovery casts a new understanding of the spin state at low temperature. Via small-angle neutron scattering and d.c. susceptibility, it is revealed that short-range ordered FM clusters exist below a well-defined temperature (T*) in highly doped LSCO. It is demonstrated that the characteristics of this clustered state appear quite unlike those of a Griffiths phase. Finally, through magenetometry and SANS, the magneto-crystalline anisotropy of highly doped LSCO is studied and the easy and hard magnetization axes are determined.

Oxygen partial pressure dependence of thermoelectric power factor in polycrystalline n-type SrTiO3: Consequences for long term stability in thermoelectric oxides

NASA Astrophysics Data System (ADS)

Sharma, Peter A.; Brown-Shaklee, Harlan J.; Ihlefeld, Jon F.

2017-04-01

The Seebeck coefficient and electrical conductivity have been measured as functions of oxygen partial pressure over the range of 10-22 to 10-1 atm at 1173 K for a 10% niobium-doped SrTiO3 ceramic with a grain size comparable to the oxygen diffusion length. Temperature-dependent measurements performed from 320 to 1275 K for as-prepared samples reveal metallic-like conduction and good thermoelectric properties. However, upon exposure to progressively increasing oxygen partial pressure, the thermoelectric power factor decreased over time scales of 24 h, culminating in a three order of magnitude reduction over the entire operating range. Identical measurements on single crystal samples show negligible changes in the power factor so that the instability of ceramic samples is primarily tied to the kinetics of grain boundary diffusion. This work provides a framework for understanding the stability of thermoelectric properties in oxides under different atmospheric conditions. The control of the oxygen atmosphere remains a significant challenge in oxide thermoelectrics.

Effect of rare-earth substitution at La-site on structural, electrical and thermoelectric properties of La0.7-xRExSr0.3MnO3 compounds (x = 0, 0.2, 0.3; RE = Eu, Gd, Y)

NASA Astrophysics Data System (ADS)

Choudhary, Y. R. S.; Mangavati, Suraj; Patil, Siddanagouda; Rao, Ashok; Nagaraja, B. S.; Thomas, Riya; Okram, G. S.; Kini, Savitha G.

2018-04-01

In the present communication, we present results on the effect of rare-earth (RE) substitution at La-site on the structural, electrical and thermoelectric properties of La0.7-xRExSr0.3MnO3 compounds. The lattice parameters are observed to decrease with RE-doping which is attributed to the fact that the substituted RE ions (RE = Eu, Gd and Y) are smaller than that of La ion. In high temperature semiconducting regime, small polaron hopping (SPH) model is valid, whereas, variable hopping model is valid in low temperature metallic region. The resistivity in the entire temperature range follows percolation model. All the samples exhibit sign reversal in thermopower, S. From temperature dependent S data, it is seen that SPH model is applicable in high temperature regime.

Microwave-Assisted Synthesis of Boron and Nitrogen co-doped Reduced Graphene Oxide for the Protection of Electromagnetic Radiation in Ku-Band.

PubMed

Umrao, Sima; Gupta, Tejendra K; Kumar, Shiv; Singh, Vijay K; Sultania, Manish K; Jung, Jung Hwan; Oh, Il-Kwon; Srivastava, Anchal

2015-09-09

The electromagnetic interference (EMI) shielding of reduced graphene oxide (MRG), B-doped MRG (B-MRG), N-doped MRG (N-MRG), and B-N co-doped MRG (B-N-MRG) have been studied in the Ku-band frequency range (12.8-18 GHz). We have developed a green, fast, and cost-effective microwave assisted route for synthesis of doped MRG. B-N-MRG shows high electrical conductivity in comparison to MRG, B-MRG and N-MRG, which results better electromagnetic interference (EMI) shielding ability. The co-doping of B and N significantly enhances the electrical conductivity of MRG from 21.4 to 124.4 Sm(-1) because N introduces electrons and B provides holes in the system and may form a nanojunction inside the material. Their temperature-dependent electrical conductivity follows 2D-variable range hopping (2D-VRH) and Efros-Shklovskii-VRH (ES-VRH) conduction model in a low temperature range (T<50 K). The spatial configuration of MRG after doping of B and N enhances the space charge polarization, natural resonance, dielectric polarization, and trapping of EM waves by internal reflection leading to a high EMI shielding of -42 dB (∼99.99% attenuation) compared to undoped MRG (-28 dB) at a critical thickness of 1.2 mm. Results suggest that the B-N-MRG has great potential as a candidate for a new type of EMI shielding material useful in aircraft, defense industries, communication systems, and stealth technology.

Hidden order signatures in the antiferromagnetic phase of U (Ru1-xFex) 2Si2

NASA Astrophysics Data System (ADS)

Williams, T. J.; Aczel, A. A.; Stone, M. B.; Wilson, M. N.; Luke, G. M.

2017-03-01

We present a comprehensive set of elastic and inelastic neutron scattering measurements on a range of Fe-doped samples of U (Ru1-xFex) 2Si2 with 0.01 ≤x ≤0.15 . All of the samples measured exhibit long-range antiferromagnetic order, with the size of the magnetic moment quickly increasing to 0.51 μB at 2.5% doping and continuing to increase monotonically with doping, reaching 0.69 μB at 15% doping. Time-of-flight and inelastic triple-axis measurements show the existence of excitations at (1 0 0) and (1.4 0 0) in all samples, which are also observed in the parent compound. While the excitations in the 1% doping are quantitatively identical to the parent material, the gap and width of the excitations change rapidly at 2.5% Fe doping and above. The 1% doped sample shows evidence for a separation in temperature between the hidden order and antiferromagnetic transitions, suggesting that the antiferromagnetic state emerges at very low Fe dopings. The combined neutron scattering data suggest not only discontinuous changes in the magnetic moment and excitations between the hidden order and antiferromagnetic phases, but that these changes continue to evolve up to at least x =0.15 .

Widely tunable erbium-doped fiber laser based on multimode interference effect.

PubMed

Castillo-Guzman, A; Antonio-Lopez, J E; Selvas-Aguilar, R; May-Arrioja, D A; Estudillo-Ayala, J; LiKamWa, P

2010-01-18

A widely tunable erbium-doped all-fiber laser has been demonstrated. The tunable mechanism is based on a novel tunable filter using multimode interference effects (MMI). The tunable MMI filter was applied to fabricate a tunable erbium-doped fiber laser via a standard ring cavity. A tuning range of 60 nm was obtained, ranging from 1549 nm to 1609 nm, with a signal to noise ratio of 40 dB. The tunable MMI filter mechanism is very simple and inexpensive, but also quite efficient as a wavelength tunable filter.

Evolution of structural and transport properties in Y-doped double perovskite Sr2FeIrO6

NASA Astrophysics Data System (ADS)

Kharkwal, K. C.; Pramanik, A. K.

2018-05-01

The structural and transport properties of Yttrium doped double perovskite Sr2FeIrO6 have been investigated. Structural properties have been investigated by means of x-ray diffraction measurement and Rietveld analysis. Structural transition has not been observed although lattice parameters evolve with the Yttrium doping. All samples have been found to be insulating over the whole temperature range where the resistivity increases with doping. This increase in resistivity with doping may be due to the change in charge state of transition metal.

Electronic and optical properties of Cr-, B-doped, and (Cr, B)-codoped SrTiO3

NASA Astrophysics Data System (ADS)

Wu, Jiao; Huang, Wei-Qing; Yang, Ke; Wei, Zeng-Xi; Peng, P.; Huang, Gui-Fang

2017-04-01

Energy band engineering of semiconductors plays a crucial role in exploring high-efficiency visible-light response photocatalysts. Herein, we systematically study the electronic properties and optical response of Cr-, B-doped SrTiO3, and (Cr, B)-codoped SrTiO3 by using first-principles calculations to explore the mechanism for its superior photocatalytic activities in the visible light region. Special emphasis is placed on uncovering the synergy effects of nonmetal B dopant with metal Cr dopant at different cation sites. It is found that the electronic properties and optical absorption of SrTiO3 can be dramatically engineered by mono- or co-doping. In particular, the intermediate levels lying in the bandgap of the codoped SrTiO3 relay on the Cr impurity doped at Sr or Ti cation sites. Moreover, the (Cr@Sr, B@O)-SrTiO3 retains the charge balancing without the generation of unexpected oxygen vacancies, and is more desirable for solar light harvesting due to its higher absorption than others in the entire visible light. The findings can rationalize the available experimental results and are helpful in designing SrTiO3-based photocatalysts with high-efficiency performance.

Amplified luminescence of heavily doped AlxGa1-xN structures under optical pumping

NASA Astrophysics Data System (ADS)

Bokhan, P. A.; Zhuravlev, K. S.; Zakrevskii, D. E.; Malin, T. V.; Osinnykh, I. V.; Fateev, N. V.

2018-03-01

Spectral, temporal, and polarisation characteristics of luminescence of heavily doped AlxGa1-xN films on a sapphire substrate are studied under pulsed pumping at the wavelength λ = 266 m. Spectra of spontaneous emission related to donor – acceptor transitions are inhomogeneously broadened with the FWHM of above 0.5 eV and cover the entire visible range. Spectra of radiation emitted from an edge of investigated structure comprise several narrow-band equidistant components, each of them being split to TE and TM modes with mutually orthogonal polarisations. This is related to plane waves propagating inside a plane waveguide along a zigzag path in the conditions of total internal reflection from waveguide surfaces. The optical gains measured for Al0.5Ga0.5N/AlN at λ ≈ 510 nm, Al0.74Ga0.26N/AlN at λ ≈ 468 nm, and AlN/Al0.6Ga0.4N/AlN/Al2O3 at λ ≈ 480 nm were, respectively, ~70, 20, and 44 cm-1. The luminescence quantum efficiencies measured for Al0.74Ga0.26N, Al0.65Ga0.35N, and Al0.5Ga0.5N films are, respectively, 0.79, 0.49, and 0.14; the transition cross sections calculated at emission band centres are ~10-18 cm2.

1.319 μm excited intense 800 nm frequency upconversion emission in Tm{sup 3+}-doped fluorogermanate glass

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gouveia-Neto, A. S.; Vermelho, M. V. D.; Gouveia, E. A.

2015-11-23

Generation of near-infrared light within the first biological optical window via frequency upconversion in Tm{sup 3+}-doped PbGeO{sub 3}-PbF{sub 2}-CdF{sub 2} glass excited within the second biological window at 1.319 μm is reported. The upconversion emission at 800 nm is the sole light signal observed in the entire ultraviolet-visible-near-infrared spectral region making it possible obtaining high contrast imaging. The dependence of the 800 nm signal upon the sample temperature was investigated and results showed an increase by a factor of ×2.5 in the 30–280 °C range. Generation of detectable 690 nm for temperatures above 100 °C in addition to the intense 800 nm main signal was also observed.more » The proposed excitation mechanism for the 800 nm thulium emitting level is assigned to a multiphonon-assisted excitation from the ground-state {sup 3}H{sub 6} to the {sup 3}H{sub 5} excited-state level, a rapid relaxation to the {sup 3}F{sub 4} level and followed by an excited-state absorption of the pump photons mediated by multiphonons connecting the {sup 3}F{sub 4} level to the {sup 3}H{sub 4} emitting level.« less

CMOS Imager Has Better Cross-Talk and Full-Well Performance

NASA Technical Reports Server (NTRS)

Pain, Bedabrata; Cunningham, Thomas J.

2011-01-01

A complementary metal oxide/semiconductor (CMOS) image detector now undergoing development is designed to exhibit less cross-talk and greater full-well capacity than do prior CMOS image detectors of the same type. Imagers of the type in question are designed to operate from low-voltage power supplies and are fabricated by processes that yield device features having dimensions in the deep submicron range. Because of the use of low supply potentials, maximum internal electric fields and depletion widths are correspondingly limited. In turn, these limitations are responsible for increases in cross-talk and decreases in charge-handling capacities. Moreover, for small pixels, lateral depletion cannot be extended. These adverse effects are even more accentuated in a back-illuminated CMOS imager, in which photogenerated charge carriers must travel across the entire thickness of the device. The figure shows a partial cross section of the structure in the device layer of the present developmental CMOS imager. (In a practical imager, the device layer would sit atop either a heavily doped silicon substrate or a thin silicon oxide layer on a silicon substrate, not shown here.) The imager chip is divided into two areas: area C, which contains readout circuits and other electronic circuits; and area I, which contains the imaging (photodetector and photogenerated-charge-collecting) pixel structures. Areas C and I are electrically isolated from each other by means of a trench filled with silicon oxide. The electrical isolation between areas C and I makes it possible to apply different supply potentials to these areas, thereby enabling optimization of the supply potential and associated design features for each area. More specifically, metal oxide semiconductor field-effect transistors (MOSFETs) that are typically included in CMOS imagers now reside in area C and can remain unchanged from established designs and operated at supply potentials prescribed for those designs, while the dopings and the lower supply potentials in area I can be tailored to optimize imager performance. In area I, the device layer includes an n+ -doped silicon layer on which is grown an n-doped silicon layer. A p-doped silicon layer is grown on top of the n -doped layer. The total imaging device thickness is the sum of the thickness of the n+, n, and p layers. A pixel photodiode is formed between a surface n+ implant, a p implant underneath it, the aforementioned p layer, and the n and n+ layers. Adjacent to the diode is a gate for transferring photogenerated charges out of the photodiode and into a floating diffusion formed by an implanted p+ layer on an implanted n-doped region. Metal contact pads are added to the back-side for providing back-side bias.

OM-VPE growth of Mg-doped GaAs. [OrganoMetallic-Vapor Phase Epitaxy

NASA Technical Reports Server (NTRS)

Lewis, C. R.; Dietze, W. T.; Ludowise, M. J.

1982-01-01

The epitaxial growth of Mg-doped GaAs by the organometallic vapor phase epitaxial process (OM-VPE) has been achieved for the first time. The doping is controllable over a wide range of input fluxes of bis (cyclopentadienyl) magnesium, (C5H5)2Mg, the organometallic precursor to Mg.

Resonator-Based Silicon Electro-Optic Modulator with Low Power Consumption

NASA Astrophysics Data System (ADS)

Xin, Maoqing; Danner, Aaron J.; Eng Png, Ching; Thor Lim, Soon

2009-04-01

This paper demonstrates, via simulation, an electro-optic modulator based on a subwavelength Fabry-Perot resonator cavity with low power consumption of 86 µW/µm. This is, to the best of our knowledge, the lowest power reported for silicon photonic bandgap modulators. The device is modulated at a doped p-i-n junction overlapping the cavity in a silicon waveguide perforated with etched holes, with the doping area optimized for minimum power consumption. The surface area of the entire device is only 2.1 µm2, which compares favorably to other silicon-based modulators. A modulation speed of at least 300 MHz is detected from the electrical simulator after sidewall doping is introduced which is suitable for sensing or fiber to the home (FTTH) technologies, where speed can be traded for low cost and power consumption. The device does not rely on ultra-high Q, and could serve as a sensor, modulator, or passive filter with built-in calibration.

Tunable electronic properties of graphene through controlling bonding configurations of doped nitrogen atoms.

PubMed

Zhang, Jia; Zhao, Chao; Liu, Na; Zhang, Huanxi; Liu, Jingjing; Fu, Yong Qing; Guo, Bin; Wang, Zhenlong; Lei, Shengbin; Hu, PingAn

2016-06-21

Single-layer and mono-component doped graphene is a crucial platform for a better understanding of the relationship between its intrinsic electronic properties and atomic bonding configurations. Large-scale doped graphene films dominated with graphitic nitrogen (GG) or pyrrolic nitrogen (PG) were synthesized on Cu foils via a free radical reaction at growth temperatures of 230-300 °C and 400-600 °C, respectively. The bonding configurations of N atoms in the graphene lattices were controlled through reaction temperature, and characterized using Raman spectroscopy, X-ray photoelectron spectroscopy and scanning tunneling microscope. The GG exhibited a strong n-type doping behavior, whereas the PG showed a weak n-type doping behavior. Electron mobilities of the GG and PG were in the range of 80.1-340 cm(2) V(-1)·s(-1) and 59.3-160.6 cm(2) V(-1)·s(-1), respectively. The enhanced doping effect caused by graphitic nitrogen in the GG produced an asymmetry electron-hole transport characteristic, indicating that the long-range scattering (ionized impurities) plays an important role in determining the carrier transport behavior. Analysis of temperature dependent conductance showed that the carrier transport mechanism in the GG was thermal excitation, whereas that in the PG, was a combination of thermal excitation and variable range hopping.

Tunable electronic properties of graphene through controlling bonding configurations of doped nitrogen atoms

PubMed Central

Zhang, Jia; Zhao, Chao; Liu, Na; Zhang, Huanxi; Liu, Jingjing; Fu, Yong Qing; Guo, Bin; Wang, Zhenlong; Lei, Shengbin; Hu, PingAn

2016-01-01

Single–layer and mono–component doped graphene is a crucial platform for a better understanding of the relationship between its intrinsic electronic properties and atomic bonding configurations. Large–scale doped graphene films dominated with graphitic nitrogen (GG) or pyrrolic nitrogen (PG) were synthesized on Cu foils via a free radical reaction at growth temperatures of 230–300 °C and 400–600 °C, respectively. The bonding configurations of N atoms in the graphene lattices were controlled through reaction temperature, and characterized using Raman spectroscopy, X–ray photoelectron spectroscopy and scanning tunneling microscope. The GG exhibited a strong n–type doping behavior, whereas the PG showed a weak n–type doping behavior. Electron mobilities of the GG and PG were in the range of 80.1–340 cm2 V−1·s−1 and 59.3–160.6 cm2 V−1·s−1, respectively. The enhanced doping effect caused by graphitic nitrogen in the GG produced an asymmetry electron–hole transport characteristic, indicating that the long–range scattering (ionized impurities) plays an important role in determining the carrier transport behavior. Analysis of temperature dependent conductance showed that the carrier transport mechanism in the GG was thermal excitation, whereas that in the PG, was a combination of thermal excitation and variable range hopping. PMID:27325386

A full-spectrum photocatalyst with strong near-infrared photoactivity derived from synergy of nano-heterostructured Er3+-doped multi-phase oxides.

PubMed

Chen, Huabin; Liu, Wenxia; Hu, Bin; Qin, Zhuozhuo; Liu, Hong

2017-12-07

The development of full-spectrum photocatalysts active in the near-infrared (NIR) region has gained increasing attention in the photodegradation of organic pollutants. Herein, we designed a full-spectrum photocatalyst with strong NIR photoactivity based on the synergy of Er 3+ -doped ZnO-CuO-ZnAl 2 O 4 multi-phase oxides (Er 3+ -doped Zn/Cu/Al-MPO) via the formation of n-p-n double heterojunctions. The photocatalyst was prepared by synthesizing nanosheets of a Zn/Cu/Al/Er hydrotalcite-like compound (Zn/Cu/Al/Er-HLC) with a co-precipitation method followed by calcination of the nanosheets at 800 °C. The as-prepared Er 3+ -doped Zn/Cu/Al-MPO inherits the nanosheet morphology of Zn/Cu/Al/Er-HLC, and displays over-doubled photoactivity in the entire ultraviolet (UV), visible and NIR regions compared to undoped Zn/Cu/Al-MPO. The excellent photocatalytic activity of Er 3+ -doped Zn/Cu/Al-MPO, especially its strong NIR photoactivity, is ascribed to its Er 3+ -doped CuO-involved multi-crystalline phase heterostructure, i.e., n-p-n double heterojunctions, which does not only offer an enhanced NIR absorption but also promotes the separation of photogenerated charge carriers. Importantly, the synergy of all the parts of the n-p-n double heterojuctions plays an important role in interface band structure regulation for the enhancement of the photocatalytic properties of Er 3+ -doped Zn/Cu/Al-MPO. This work has demonstrated the feasibility of utilizing hydrotalcite-like precursors in the design of full-spectrum photocatalysts active in the NIR region.

Multiple delta doping of single crystal cubic boron nitride films heteroepitaxially grown on (001)diamonds

NASA Astrophysics Data System (ADS)

Yin, H.; Ziemann, P.

2014-06-01

Phase pure cubic boron nitride (c-BN) films have been epitaxially grown on (001) diamond substrates at 900 °C. The n-type doping of c-BN epitaxial films relies on the sequential growth of nominally undoped (p-) and Si doped (n-) layers with well-controlled thickness (down to several nanometer range) in the concept of multiple delta doping. The existence of nominally undoped c-BN overgrowth separates the Si doped layers, preventing Si dopant segregation that was observed for continuously doped epitaxial c-BN films. This strategy allows doping of c-BN films can be scaled up to multiple numbers of doped layers through atomic level control of the interface in the future electronic devices. Enhanced electronic transport properties with higher hall mobility (102 cm2/V s) have been demonstrated at room temperature as compared to the normally continuously Si doped c-BN films.

Magnetization reversal process and evaluation of thermal stability factor in Cu doped granular L10 FePt films

NASA Astrophysics Data System (ADS)

Jain, S.; Papusoi, C.; Admana, R.; Yuan, H.; Acharya, R.

2018-05-01

Curie temperature TC distributions and magnetization reversal mechanism in Cu doped L10 FePt granular films is investigated as a function of film thickness in the range of ˜5-12 nm with Cu mol. % varying in the range of 0%-6%. It is shown that Cu doping increases the FePt tetragonality and chemical ordering. For Cu doped FePt-X films, coercivity (HC) exhibits a non-monotonic behavior with increasing film thickness, i.e., HC increases initially up to tcr ˜ 7 nm, and decreases thereafter. We attribute this behavior to the change in magnetization reversal mechanism from coherent to an incoherent (domain-wall driven) mode. While in un-doped films, the domain-walls nucleate at the grain boundaries, in doped films the Cu atoms may act as domain-wall nucleation and pinning sites, isolating magnetic spin clusters of reduced dimensionality with respect to the physical grain size. This is experimentally supported by a much poorer dependence of the AC susceptibility (both, real and imaginary components) on the film thickness above 7 nm than in the case of un-doped films. The formation of magnetic spin clusters inside the grains as a consequence of the reduced coupling between Fe-Fe and Fe-Pt-Fe atoms with increasing Cu doping can explain the experimentally evidenced reduction of both, the film Curie temperature, TC, and intrinsic anisotropy energy density, KC, with increasing Cu doping.

Novel and facile microwave-assisted synthesis of Mo-doped hydroxyapatite nanorods: Characterization, gamma absorption coefficient, and bioactivity.

PubMed

Abutalib, M M; Yahia, I S

2017-09-01

In the current work, the authors report the microwave-assisted synthesis Molybdenum-doped (from 0.05 to 5wt%) hydroxyapatite (HAp) for the first time. The morphology of Mo-doped HAp is nanorods of diameter in the range of 25-70nm and length in the range of 25nm to 200nm. The good crystalline nature was confirmed from X-ray diffraction patterns and also lattice parameters, grain size, strain and dislocation density were determined. The crystallite size was found to be in the range 16 to 30nm and crystallinity was found to be enhanced from 0.5 to 0.7 with doping. The field emission SEM micrographs show that the morphology of the synthesized nanostructures of pure and Mo-doped HAp are nanorods of few nanometers. The vibrational modes were identified using the FT-Raman and FT-IR spectroscopy. The dielectric properties were studied and the AC electrical conductivity was found to be increased with increasing the concentration of Mo ions doping in HAp. Moreover, antimicrobial studies were also carried out to understand the anti-bacterial and anti-fungi properties. The results suggest that it may be a good bio-ceramics material for bio-medical applications. Mo-doped HAp was subjected to the gamma irradiation produced from Cs-137 (662keV) and its related parameters such as linear absorption coefficient, the half-value layer (HVL) and the tenth value layer TVL were calculated and analyzed. Copyright © 2017 Elsevier B.V. All rights reserved.

Optical study of Erbium-doped-porous silicon based planar waveguides

NASA Astrophysics Data System (ADS)

Najar, A.; Ajlani, H.; Charrier, J.; Lorrain, N.; Haesaert, S.; Oueslati, M.; Haji, L.

2007-06-01

Planar waveguides were formed from porous silicon layers obtained on P + substrates. These waveguides were then doped by erbium using an electrochemical method. Erbium concentration in the range 2.2-2.5 at% was determined by energy dispersive X-ray (EDX) analysis performed on SEM cross sections. The refractive index of layers was studied before and after doping and thermal treatments. The photoluminescence of Er 3+ ions in the IR range and the decay curve of the 1.53 μm emission peak were studied as a function of the excitation power. The value of excited Er density was equal to 0.07%. Optical loss contributions were analyzed on these waveguides and the losses were equal to 1.1 dB/cm at 1.55 μm after doping.

Observation of interacting polaronic gas behavior in Ta-doped TiO2 thin films via terahertz time-domain spectroscopy

NASA Astrophysics Data System (ADS)

Chia, Elbert; Cheng, Liang; Lourembam, James; Wu, S. G.; Motapothula, Mallikarjuna R.; Sarkar, Tarapada; Venkatesan, Venky

Using terahertz time-domain spectroscopy (THz-TDS), we obtained the complex optical conductivity [ σ (ω) ] of Ta-doped TiO2 thin films - a transparent conducting oxide (TCO), in the frequency range 0.3-2.7 THz, temperature range 10-300 K and various Ta dopings. Our results reveal the existence of an interacting polaronic gas in these TCOs, and suggest that their large conductivity is caused by the combined effects of large carrier density and small electron-phonon coupling constant due to Ta doping. NUSNNI-NanoCore, NRF-CRP (NRF2008NRF-CRP002-024), NUS cross-faculty Grant and FRC (ARF Grant No. R-144-000-278-112), MOE Tier 1 (RG123/14), SinBeRISE CREATE.

Hidden order signatures in the antiferromagnetic phase of U ( Ru 1 - x Fe x ) 2 Si 2

DOE PAGES

Williams, Travis J.; Aczel, Adam A.; Stone, Matthew B.; ...

2017-03-31

We present a comprehensive set of elastic and inelastic neutron scattering measurements on a range of Fe-doped samples of U(Ru 1–xFe x) 2Si 2 with 0.01 ≤ x ≤ 0.15. All of the samples measured exhibit long-range antiferromagnetic order, with the size of the magnetic moment quickly increasing to 0.51μB at 2.5% doping and continuing to increase monotonically with doping, reaching 0.69μB at 15% doping. Time-of-flight and inelastic triple-axis measurements show the existence of excitations at (1 0 0) and (1.4 0 0) in all samples, which are also observed in the parent compound. While the excitations in the 1%more » doping are quantitatively identical to the parent material, the gap and width of the excitations change rapidly at 2.5% Fe doping and above. The 1% doped sample shows evidence for a separation in temperature between the hidden order and antiferromagnetic transitions, suggesting that the antiferromagnetic state emerges at very low Fe dopings. Finally, the combined neutron scattering data suggest not only discontinuous changes in the magnetic moment and excitations between the hidden order and antiferromagnetic phases, but that these changes continue to evolve up to at least x = 0.15.« less

A simulation environment for assisting system design of coherent laser doppler wind sensor for active wind turbine pitch control

NASA Astrophysics Data System (ADS)

Shinohara, Leilei; Pham Tran, Tuan Anh; Beuth, Thorsten; Umesh Babu, Harsha; Heussner, Nico; Bogatscher, Siegwart; Danilova, Svetlana; Stork, Wilhelm

2013-05-01

In order to assist a system design of laser coherent Doppler wind sensor for active pitch control of wind turbine systems (WTS), we developed a numerical simulation environment for modeling and simulation of the sensor system. In this paper we present this simulation concept. In previous works, we have shown the general idea and the possibility of using a low cost coherent laser Doppler wind sensing system for an active pitch control of WTS in order to achieve a reduced mechanical stress, increase the WTS lifetime and therefore reduce the electricity price from wind energy. Such a system is based on a 1.55μm Continuous-Wave (CW) laser plus an erbium-doped fiber amplifier (EDFA) with an output power of 1W. Within this system, an optical coherent detection method is chosen for the Doppler frequency measurement in megahertz range. A comparatively low cost short coherent length laser with a fiber delay line is used for achieving a multiple range measurement. In this paper, we show the current results on the improvement of our simulation by applying a Monte Carlo random generation method for positioning the random particles in atmosphere and extend the simulation to the entire beam penetrated space by introducing a cylindrical co-ordinate concept and meshing the entire volume into small elements in order to achieve a faster calculation and gain more realistic simulation result. In addition, by applying different atmospheric parameters, such as particle sizes and distributions, we can simulate different weather and wind situations.

Growth of boron-doped few-layer graphene by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Soares, G. V.; Nakhaie, S.; Heilmann, M.; Riechert, H.; Lopes, J. M. J.

2018-04-01

We investigated the growth of boron-doped few-layer graphene on α-Al2O3 (0001) substrates by molecular beam epitaxy using two different growth approaches: one where boron was provided during the entire graphene synthesis and the second where boron was provided only during the second half of the graphene growth run. Electrical measurements show a higher p-type carrier concentration for samples fabricated utilizing the second approach, with a remarkable modulation in the carrier concentration of almost two orders of magnitude in comparison to the pristine graphene film. The results concerning the influence of the boron flux at different growth stages of graphene on the electrical and physicochemical properties of the films are presented.

Surface Spin Glass Ordering and Exchange Bias in Nanometric Sm0.09Ca0.91MnO3 Manganites

NASA Astrophysics Data System (ADS)

Giri, S. K.; Nath, T. K.

2011-07-01

We have thoroughly investigated the entire magnetic state of under doped ferromagnetic insulating manganite Sm0.09Ca0.91MnO3 through temperature dependent linear and non-linear ac magnetic susceptibility and magnetization measurements. This ferromagnetic insulating manganite is found to have frequency dependent ferromagnetic to paramagnetic transition temperature at around 108 K. Exchange- bias effect are observed in field -cooled magnetic hysteresis loops for this nanoparticle. We have attributed our observation to the formation of ferromagnetic cluster which are formed as a consequence of intrinsic phase separation below certain temperature in this under doped manganites. We have carried out electronic- and magneto-transport measurements to support these observed results.

Bismuth-doped optical fibres: A new breakthrough in near-IR lasing media

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dianov, Evgenii M

Recent results demonstrate that bismuth-doped optical fibres have considerable potential as near-IR active lasing media. This paper examines bismuth-doped fibres intended for the fabrication of fibre lasers and optical amplifiers and reviews recent results on the luminescence properties of various types of bismuth-doped fibres and the performance of bismuth-doped fibre lasers and optical amplifiers for the spectral range 1150 - 1550 nm. Problems are discussed that have yet to be solved in order to improve the efficiency of the bismuth lasers and optical amplifiers. (optical fibres, lasers and amplifiers. properties and applications)

Synthesis of n-type semiconductor diamond single crystal under high pressure and high temperature

NASA Astrophysics Data System (ADS)

Li, Yong; Li, Shangsheng; Song, Mousheng; She, Yanchao; Wang, Qiang; Guan, Xuemao

2017-12-01

In this paper, diamond single crystal co-doped with sulfur and boron was successfully synthesized at the fixed pressure of 6.0 GPa and temperature range of 1535 K. Sulfur was detected in the co-doped diamond by Fourier Transform Infrared Spectroscopy (FTIR) and the corresponding characteristic peak located at 848 cm-1. Interestingly, Hall effect measurements indicated that the diamond co-doped with sulfur and boron exhibited n-type semiconductor behaviour. Furthermore, the Hall mobility and carrier concentration of the co-doped diamond higher than those of the boron-doping diamond.

Alkali earth co-doping effects on luminescence and scintillation properties of Ce doped Gd3Al2Ga3O12 scintillator

NASA Astrophysics Data System (ADS)

Kamada, Kei; Nikl, Martin; Kurosawa, Shunsuke; Beitlerova, Alena; Nagura, Aya; Shoji, Yasuhiro; Pejchal, Jan; Ohashi, Yuji; Yokota, Yuui; Yoshikawa, Akira

2015-03-01

The Mg and Ca co-doped Ce:Gd3Al2Ga3O12 single crystals were prepared by micro pulling down method with a wide concentration range 0-1000 ppm of the codopants. Absorption and luminescence spectra were measured together with several other scintillation characteristics, namely the scintillation decay and light yield to reveal the effect of Mg and Ca co-doping. The scintillation decays were accelerated by both Mg and Ca codopants. Comparing to Ca co-doping, the Mg co-doped samples showed much faster decay and comparatively smaller light output decrease with increasing Mg dopant concentration.

Magnetic properties and thermal stability of Ti-doped CrO2 films

NASA Astrophysics Data System (ADS)

Zhang, Z.; Cheng, M.; Lu, Z.; Yu, Z.; Liu, S.; Liang, R.; Liu, Y.; Shi, J.; Xiong, R.

2018-04-01

Chromium dioxide (CrO2) is a striking half metal material which may have important applications in the field of spintronics. However, pure CrO2 film is metastable at room temperature and the synthesis process can be only performed in a narrow temperature range of 390-410 °C with TiO2 used as substrate material. Here, we report the preparation and investigation of (1 0 0) oriented Ti-doped CrO2 films on TiO2 substrates. It is found that Ti-doped films can maintain pure rutile phase even after a 510 °C post-annealing, showing much better thermal stability than pure CrO2 films. Ti-doped films can be prepared in a wider temperature window (390-470 °C), which may be attributed to the improvement of thermal stability. The broadening of process window may be beneficial for further improvement of film quality by optimizing growth temperature in a larger range. In addition to the improvement of thermal stability, the magnetic properties of Ti-doped CrO2 are also found to be tuned by Ti doping: saturation magnetizations of Ti-doped films at room temperature are significantly lower, and magnetic anisotropy decreases as the Ti-concentration increases, which is beneficial for decreasing switching current density in STT-based spintronic devices.

Li-adsorption on doped Mo2C monolayer: A novel electrode material for Li-ion batteries

NASA Astrophysics Data System (ADS)

Mehta, Veenu; Tankeshwar, K.; Saini, Hardev S.

2018-04-01

A first principle calculation has been used to study the electronic and magnetic properties of pristine and N/Mn-doped Mo2C with and without Li-adsorption. The pseudopotential method implemented in SIESTA code based on density functional theory with generalized gradient approximation (GGA) as exchange-correlation (XC) potential has been employed. Our calculated results revealed that the Li gets favorably adsorbed on the hexagonal centre in pristine Mo2C and at the top of C-atom in case of N/Mn-doped Mo2C. The doping of Mn and N atom increases the adsorption of Li in Mo2C monolayer which may results in enhancement of storage capacity in Li-ion batteries. The metallic nature of Li-adsorbed pristine and N/Mn-doped Mo2C monolayer implies a good electronic conduction which is crucial for anode materials for its applications in rechargeable batteries. Also, the open circuit voltage for single Li-adsorption in doped Mo2C monolayer comes in the range of 0.4-1.0 eV which is the optimal range for any material to be used as an anode material. Our result emphasized the enhanced performance of doped Mo2C as an anode material in Li-ion batteries.

Auto-combustion synthesis and characterization of Mg doped CuAlO{sub 2} nanoparticles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Agrawal, Shraddha, E-mail: shraddhaa32@gmail.com; Parveen, Azra; Naqvi, A. H.

2015-06-24

The synthesis of pure and Mg doped Copper aluminumoxide CuAlO{sub 2}nanoparticles, a promising p-type TCO (transparent conducting oxide) have been done bysol gel auto combustion method using NaOH as a fuel, calcinated at 600°C. The structural properties were examined by XRD and SEM techniques. The optical absorption spectra of CuAlO{sub 2} sample recorded by UV-VIS spectrophotometer in the range of 200 to 800 nm have been presented. The crystallite size was determined by powder X-ray diffraction technique. The electrical behavior of pure and Mg doped CuAlO{sub 2} has been studied over a wide range of frequencies by using complex impedance spectroscopy.Themore » variation of a.c. conductivity has been studied as function of frequency and temperature. The data taken together conclude that doping causes decreases in the ac conductivity of the nanoparticles as compared with the pure nanoparticles. Mg doping affects the optical properties and band gap.« less

Auto-combustion synthesis and characterization of Mg doped CuAlO2 nanoparticles

NASA Astrophysics Data System (ADS)

Agrawal, Shraddha; Parveen, Azra; Naqvi, A. H.

2015-06-01

The synthesis of pure and Mg doped Copper aluminumoxide CuAlO2nanoparticles, a promising p-type TCO (transparent conducting oxide) have been done bysol gel auto combustion method using NaOH as a fuel, calcinated at 600°C. The structural properties were examined by XRD and SEM techniques. The optical absorption spectra of CuAlO2 sample recorded by UV-VIS spectrophotometer in the range of 200 to 800 nm have been presented. The crystallite size was determined by powder X-ray diffraction technique. The electrical behavior of pure and Mg doped CuAlO2 has been studied over a wide range of frequencies by using complex impedance spectroscopy.The variation of a.c. conductivity has been studied as function of frequency and temperature. The data taken together conclude that doping causes decreases in the ac conductivity of the nanoparticles as compared with the pure nanoparticles. Mg doping affects the optical properties and band gap.

Determination of hydrogen permeability in commercial and modified superalloys

NASA Technical Reports Server (NTRS)

Bhattacharyya, S.; Peterman, W.

1983-01-01

The results of hydrogen permeability measurements on several iron- and cobalt-base alloys as well as on two long-ranged ordered alloys over the range of 705 to 870 C (1300 to 1600 F) are summarized. The test alloys included wrought alloys N-155, IN 800, A-286, 19-9DL, and 19-9DL modifications with aluminum, niobium, and misch metal. In addition, XF-818, CRM-6D, SA-F11, and HS-31 were evaluated. Two wrought long-range ordered alloys, Ni3Al and (Fe,Ni)3(V,Al) were also evaluated. All tests were conducted at 20.7 MPa pressure in either pure and/or 1% CO2-doped H2 for test periods as long as 133 h. Detailed analyses were conducted to determine the relative permeability rankings of these alloys and the effect of doping, exit surface oxidation, specimen design variations, and test duration on permeability coefficient, and permeation activation energies were determined. The two long-range ordered alloys had the lowest permeability coefficients in pure H2 when compared with the eight commercial alloys and their modifications. With CO2 doping, significant decrease in permeability was observed in commercial alloys--no doped tests were conducted with the long-range ordered alloys.

High performance supercapacitors based on highly conductive nitrogen-doped graphene sheets.

PubMed

Qiu, Yongcai; Zhang, Xinfeng; Yang, Shihe

2011-07-21

Thermal nitridation of reduced graphene oxide sheets yields highly conductive (∼1000-3000 S m(-1)) N-doped graphene sheets, as a result of the restoration of the graphene network by the formation of C-N bonded groups and N-doping. Even without carbon additives, supercapacitors made of the N-doped graphene electrodes can deliver remarkable energy and power when operated at higher voltages, in the range of 0-4 V. This journal is © the Owner Societies 2011

Tunability of the dielectric function of heavily doped germanium thin films for mid-infrared plasmonics

NASA Astrophysics Data System (ADS)

Frigerio, Jacopo; Ballabio, Andrea; Isella, Giovanni; Sakat, Emilie; Pellegrini, Giovanni; Biagioni, Paolo; Bollani, Monica; Napolitani, Enrico; Manganelli, Costanza; Virgilio, Michele; Grupp, Alexander; Fischer, Marco P.; Brida, Daniele; Gallacher, Kevin; Paul, Douglas J.; Baldassarre, Leonetta; Calvani, Paolo; Giliberti, Valeria; Nucara, Alessandro; Ortolani, Michele

2016-08-01

Heavily doped semiconductor thin films are very promising for application in mid-infrared plasmonic devices because the real part of their dielectric function is negative and broadly tunable in the 5 to 50 μ m wavelength range at least. In this work, we investigate the electrodynamics of heavily n -type-doped germanium epilayers at infrared frequencies beyond the assumptions of the Drude model. The films are grown on silicon and germanium substrates, are in situ doped with phosphorous in the 1017 to 1019 cm-3 range, then screened plasma frequencies in the 100 to 1200 cm-1 range were observed. We employ infrared spectroscopy, pump-probe spectroscopy, and dc transport measurements to determine the tunability of the plasma frequency. Although no plasmonic structures have been realized in this work, we derive estimates of the decay time of mid-infrared plasmons and of their figures of merit for field confinement and for surface plasmon propagation. The average electron scattering rate increases almost linearly with excitation frequency, in agreement with quantum calculations based on a model of the ellipsoidal Fermi surface at the conduction band minimum of germanium accounting for electron scattering with optical phonons and charged impurities. Instead, we found weak dependence of plasmon losses on neutral impurity density. In films where a transient plasma was generated by optical pumping, we found significant dependence of the energy relaxation times in the few-picosecond range on the static doping level of the film, confirming the key but indirect role played by charged impurities in energy relaxation. Our results indicate that underdamped mid-infrared plasma oscillations are attained in n -type-doped germanium at room temperature.

Electrical transport and thermoelectric properties of Ni-doped perovskite-type YCo1-x NixO3 (0 <= x <= 0.07) prepared by sol-gel process

NASA Astrophysics Data System (ADS)

Liu, Yi; Li, Hai-Jin; Zhang, Qing; Li, Yong; Liu, Hou-Tong

2013-05-01

Electrical transport and thermoelectric properties of Ni-doped YCo1-xNixO3(0 <= x <= 0.07), prepared by using the sol-gel process, are investigated in a temperature range from 100 to 780 K. The results show that with the increase of Ni doping content, the values of DC resistivity of YCo1-xNixO3 decrease, but carrier concentration increases. The temperature dependences of the resistivity for YCo1-xNixO3 are found to follow a relation of ln ρ ∝ 1/T in a low-temperature range (LTR) (T < ~ 304 K for x = 0; ~ 230 K < T < ~ 500 K for x = 0.02, 0.05, and 0.07) and high-temperature range (HTR) (T > ~ 655 K for all compounds), respectively. The estimated apparent activation energies for conduction Ea1 in LRT and Ea2 in HTR are both found to decrease monotonically with doping content increasing. At very low temperatures (T < ~230 K), Mott's law is observed for YCo1—xNixO3 (x >= 0.02), indicating that considerable localized states form in the heavy doping compounds. Although the Seebeck coefficient of the compound decreases after Ni doping, the power factor of YCo1-xNixO3 is enhanced remarkably in a temperature range from 300 to 740 K, i.e., a 6-fold increase is achieved at 500 K for YCo0.98Ni0.02O3, indicating that the high-temperature thermoelectric property of YCoO3 can be improved by partial substitution of Ni for Co.

21-nm-range wavelength-tunable L-band Er-doped fiber linear-cavity laser

NASA Astrophysics Data System (ADS)

Yang, Shiquan; Zhao, Chunliu; Li, Zhaohui; Ding, Lei; Yuan, Shuzhong; Dong, Xiaoyi

2001-10-01

A novel method, which utilizes amplified spontaneous emission (ASE) as a secondary pump source, is presented for implanting a linear cavity erbium-doped fiber laser operating in L-Band. The output wavelength tuned from 1566 nm to 1587 nm, about 21 nm tuning range, was obtained in the experiment and the stability of the laser is very good.

Influence of Fe doping on the structural, optical and acetone sensing properties of sprayed ZnO thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prajapati, C.S.; Kushwaha, Ajay; Sahay, P.P., E-mail: dr_ppsahay@rediffmail.com

2013-07-15

Graphical abstract: All the films are found to be polycrystalline ZnO possessing hexagonal wurtzite structure. The intensities of all the peaks are diminished strongly in the Fe-doped films, indicating their lower crystallinity as compared to the undoped ZnO film. The average crystallite size decreases from 35.21 nm (undoped sample) to 15.43 nm (1 at% Fe-doped sample). - Highlights: • Fe-doped ZnO films show smaller crystallinity with crystallite size: 15–26 nm. • Optical band gap in ZnO films decreases on Fe doping. • Fe-doped films exhibit the normal dispersion for the wavelength range 450–600 nm. • PL spectra of the Fe-dopedmore » films show quenching of the broad green-orange emission. • Acetone response of the Fe-doped films increases considerably at 300 °C. - Abstract: The ZnO thin films (undoped and Fe-doped) deposited by chemical spray pyrolysis technique have been analyzed by X-ray powder diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM). Results show that all the films possess hexagonal wurtzite structure of zinc oxide having crystallite sizes in the range 15–36 nm. On 1 at% Fe doping, the surface roughness of the film increases which favors the adsorption of atmospheric oxygen on the film surface and thereby increase in the gas response. Optical studies reveal that the band gap decreases due to creation of some defect energy states below the conduction band edge, arising out of the lattice disorder in the doped films. The refractive index of the films decreases on Fe doping and follows the Cauchy relation of normal dispersion. Among all the films examined, the 1 at% Fe-doped film exhibits the maximum response (∼72%) at 300 °C for 100 ppm concentration of acetone in air.« less

Effect of Doping Materials on the Low-Level NO Gas Sensing Properties of ZnO Thin Films

NASA Astrophysics Data System (ADS)

Çorlu, Tugba; Karaduman, Irmak; Yildirim, Memet Ali; Ateş, Aytunç; Acar, Selim

2017-07-01

In this study, undoped, Cu-doped, and Ni-doped ZnO thin films have been successfully prepared by successive ionic layer adsorption and reaction method. The structural, compositional, and morphological properties of the thin films are characterized by x-ray diffractometer, energy dispersive x-ray analysis (EDX), and scanning electron microscopy, respectively. Doping effects on the NO gas sensing properties of these thin films were investigated depending on gas concentration and operating temperature. Cu-doped ZnO thin film exhibited a higher gas response than undoped and Ni-doped ZnO thin film at the operating temperature range. The sensor with Cu-doped ZnO thin film gave faster responses and recovery speeds than other sensors, so that is significant for the convenient application of gas sensor. The response and recovery speeds could be associated with the effective electron transfer between the Cu-doped ZnO and the NO molecules.

Visible emission in Sm3+ and Tb3+ doped phosphate glass excited by UV radiation

NASA Astrophysics Data System (ADS)

Zmojda, Jacek; Dorosz, Dominik; Kochanowicz, Marcin; Miluski, Piotr; Czajkowski, Karol; Ragin, Tomasz

2013-10-01

In the article analysis of UV absorption and visible fluorescence of Sm3+ and Tb3+ ions doped phosphate glass with molar composition: 65P2O5 + 8Al2O3 + 10BaO + 17(Na2O + MgO + ZnO) have been investigated. As a result of optical pumping fabricated glass with radiation from a deuterium lamp four luminescence bands were observed near to the wavelength of 600 nm for Sm3+ ions and 550 nm for Tb3+ ions. It was found that larger energy gap between laser and ground levels leads to the strongest emission in the visible range in terbium doped glasses than in glasses doped with samarium ions. Both fabricated glasses are characterized by the ability to selectively detect the radiation in the UV range.

Electrical properties of tin-doped zinc oxide nanostructures doped at different dopant concentrations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nasir, M. F., E-mail: babaibaik2002@yahoo.com; Zainol, M. N., E-mail: nizarzainol@yahoo.com; Hannas, M., E-mail: mhannas@gmail.com

This project has been focused on the electrical and optical properties respectively on the effect of Tin doped zinc oxide (ZnO) thin films at different dopant concentrations. These thin films were doped with different Sn dopant concentrations at 1 at%, 2 at%, 3 at%, 4 at% and 5 at% was selected as the parameter to optimize the thin films quality while the annealing temperature is fixed 500 °C. Sn doped ZnO solutions were deposited onto the glass substrates using sol-gel spin coating method. This project was involved with three phases, which are thin films preparation, deposition and characterization. The thinmore » films were characterized using Current Voltage (I-V) measurement and ultraviolet-visible-near-infrared (UV-vis-NIR) spectrophotometer (Perkin Elmer Lambda 750) for electrical properties and optical properties. The electrical properties show that the resistivity is the lowest at 4 at% Sn doping concentration with the value 3.08 × 10{sup 3} Ωcm{sup −1}. The absorption coefficient spectrum obtained shows all films exhibit very low absorption in the visible (400-800 nm) and near infrared (NIR) (>800 nm) range but exhibit high absorption in the UV range.« less

Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations

NASA Astrophysics Data System (ADS)

Horita, Masahiro; Takashima, Shinya; Tanaka, Ryo; Matsuyama, Hideaki; Ueno, Katsunori; Edo, Masaharu; Takahashi, Tokio; Shimizu, Mitsuaki; Suda, Jun

2017-03-01

Mg-doped p-type gallium nitride (GaN) layers with doping concentrations in the range from 6.5 × 1016 cm-3 (lightly doped) to 3.8 × 1019 cm-3 (heavily doped) were investigated by Hall-effect measurement for the analysis of hole concentration and mobility. p-GaN was homoepitaxially grown on a GaN free-standing substrate by metalorganic vapor-phase epitaxy. The threading dislocation density of p-GaN was 4 × 106 cm-2 measured by cathodoluminescence mapping. Hall-effect measurements of p-GaN were carried out at a temperature in the range from 130 to 450 K. For the lightly doped p-GaN, the acceptor concentration of 7.0 × 1016 cm-3 and the donor concentration of 3.2 × 1016 cm-3 were obtained, where the compensation ratio was 46%. We also obtained the depth of the Mg acceptor level to be 220 meV. The hole mobilities of 86, 31, 14 cm2 V-1 s-1 at 200, 300, 400 K, respectively, were observed in the lightly doped p-GaN.

Critical exponent analysis of lightly germanium-doped La0.7Ca0.3Mn1-xGexO3 (x = 0.05 and x = 0.07)

NASA Astrophysics Data System (ADS)

Nanto, Dwi; Kurniawan, Budhy; Soegijono, Bambang; Ghosh, Nilotpal; Hwang, Jong-Soon; Yu, Seong-Cho

2018-04-01

We have used a critical behavior study of La0.7Ca0.3MnO3 (LCMO) manganite perovskites whose Mn sites have been doped with Ge to explore magnetic interactions. Light Ge doping of 5 or 7 percent tended to produce LCMOs with second order magnetic transitions. The critical parameters of 5- and 7-percent Ge-doped LCMO were determined to be TC = 185 K, β = 0.331 ± 0.019, and γ = 1.15 ± 0.017; and TC = 153 K, β = 0.496 ± 0.011, and γ = 1.03 ± 0.046, respectively, via the modified Arrott plot method. Isothermal magnetization data collected near the Curie temperature (TC) was split into a universal function with two branches M(H,ɛ) = |ɛ|βf±(H/|ɛ|β+γ), where ɛ=(T-TC)/TC is the reduced temperature. f+ is used when T>TC, while f̲ is used when T

Iodine doping effects on the lattice thermal conductivity of oxidized polyacetylene nanofibers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bi, Kedong, E-mail: lishi@mail.utexas.edu, E-mail: kedongbi@seu.edu.cn; Department of Mechanical Engineering, University of Texas at Austin, Austin, Texas 78712; Weathers, Annie

2013-11-21

Thermal transport in oxidized polyacetylene (PA) nanofibers with diameters in the range between 74 and 126 nm is measured with the use of a suspended micro heater device. With the error due to both radiation and contact thermal resistance corrected via a differential measurement procedure, the obtained thermal conductivity of oxidized PA nanofibers varies in the range between 0.84 and 1.24 W m{sup −1} K{sup −1} near room temperature, and decreases by 40%–70% after iodine doping. It is also found that the thermal conductivity of oxidized PA nanofibers increases with temperature between 100 and 350 K. Because of exposure to oxygen during sample preparation, themore » PA nanofibers are oxidized to be electrically insulating before and after iodine doping. The measurement results reveal that iodine doping can result in enhanced lattice disorder and reduced lattice thermal conductivity of PA nanofibers. If the oxidation issue can be addressed via further research to increase the electrical conductivity via doping, the observed suppressed lattice thermal conductivity in doped polymer nanofibers can be useful for the development of such conducting polymer nanostructures for thermoelectric energy conversion.« less

Structural and impurity phase transitions of LiNaSO4:RE probed using cathodo-thermoluminescence

NASA Astrophysics Data System (ADS)

Maghrabi, M.; Finch, A. A.; Townsend, P. D.

2008-11-01

Spectrally resolved cathodo-thermoluminescence spectra of rare earth (RE) doped LiNaSO4 measured from 20 to 673 K reveal several anomalies in the RE emission lines and intensities. The low (20-300 K) temperature data show a discontinuous change in intensity at ~170 K that is either a marked intensity enhancement or a drop truncating the entire spectrum. Such an effect on the host luminescence has previously been assigned to a transition between cubic and hexagonal polymorphs of ice nanoparticle inclusions. Similar, but less profound anomalies are seen above room temperature (300-673 K) where the changes take the form of either a discontinuity in intensity at ~480 K or reduced intensity in the range 430-530 K. There are changes in the relative intensities of different emission lines of the same dopant in this temperature range. Such high temperature variations are ascribed to structural phase changes within the LiNaSO4 crystals. The behaviours may result from Li-poor surfaces or twin boundaries behaving like Na2SO4. This phase change is suggested in the open literature for LiNaSO4 but not yet fully documented, perhaps because the effects span a wide range of temperatures or due to experimental features inherent in most luminescence facilities.

Analysis of Er{sup 3+} and Ho{sup 3+} codoped fluoroindate glasses as wide range temperature sensor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Haro-Gonzalez, P., E-mail: patharo@ull.es; Leon-Luis, S.F.; Gonzalez-Perez, S.

2011-07-15

Graphical abstract: The sensor sensitivity as a function of the temperature of erbium and holmium doped fluoroindate glasses. A wide temperature range from 20 K to 425 K is covered with a sensitivity larger than 0.0005. Highlights: {yields} The FIR technique has been carried out in fluoroindate glass sample. {yields} The Er doped fluoroindate sample has a maximum sensitivity of 0.0028 K{sup -1} at 425 K. {yields} The Ho doped fluoroindate sample has a maximum sensitivity of 0.0036 K{sup -1} at 59 K. -- Abstract: The fluorescence intensity ratio technique for two fluoroindate glass samples has been carried out. Themore » green emissions at 523 nm and at 545 nm in a 0.1 mol% of Er{sup 3+} doped fluoroindate glass was studied in a wide range of temperature from 125 K to 425 K with a maximum sensitivity of 0.0028 K{sup -1} for 425 K. In a sample doped with 0.1 mol% of Ho{sup 3+} the emissions at 545 nm and at 750 nm were analyzed as a function of temperature from 20 K to 300 K obtaining a maximum sensitivity of 0.0036 K{sup -1} at 59 K. Using both fluoroindate glass samples a wide temperature range from 20 K to 425 K is easily covered pumping with two low-cost diode laser at 406 nm and 473 nm.« less

Electronic and transport properties of Li-doped NiO epitaxial thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, J. Y.; Li, W. W.; Hoye, R. L. Z.

NiO is a p-type wide bandgap semiconductor of use in various electronic devices ranging from solar cells to transparent transistors. Understanding and improving its optical and transport properties have been of considerable interest. In this work, we have investigated the effect of Li doping on the electronic, optical and transport properties of NiO epitaxial thin films grown by pulsed laser deposition. We show that Li doping significantly increases the p-type conductivity of NiO, but all the films have relatively low room-temperature mobilities (<0.05 cm2 V -1s -1). The conduction mechanism is better described by small-polaron hoping model in the temperaturemore » range of 200 K < T <330 K, and variable range hopping at T <200 K. A combination of x-ray photoemission and O K-edge x-ray absorption spectroscopic investigations reveal that the Fermi level gradually shifts toward the valence band maximum (VBM) and a new hole state develops with Li doping. Both the VBM and hole states are composed of primarily Zhang-Rice bound states, which accounts for the small polaron character (low mobility) of hole conduction. Our work provides guidelines for the search for p-type oxide materials and device optimization.NiO is a p-type wide bandgap semiconductor of use in various electronic devices ranging from solar cells to transparent transistors. This work reports the controlling of conductivity and increase of work functions by Li doping.« less

Structural and photoluminescence properties of Ni doped CdS nanoparticles synthesis by sol gel method

NASA Astrophysics Data System (ADS)

Mahdi, Hadeel Salih; Parveen, Azra; Azam, Ameer

2018-05-01

Ni doped CdS nanoparticles have been successfully synthesized by sol-gel method. Nickel nitrate, cadmium nitrate, sodium sulfide has been used as precursors for the preparation of these Ni-doped CdS nanoparticles. The structural properties were studied by X-ray diffraction analysis. Surface morphology and the composition of the samples were studied by scanning electron microscope (SEM). The X-ray diffraction results revealed that the Ni-doped CdS nanoparticles were in hexagonal structure. The crystallite size was determined from Debye-Scherer equation and showed that the particle size increases with the doping of Ni. Optical absorption spectra of Ni doped CdS also was studied by Photoluminescence spectroscopy in the range of 200-600 nm.

The Effect of Acceptor and Donor Doping on Oxygen Vacancy Concentrations in Lead Zirconate Titanate (PZT).

PubMed

Slouka, Christoph; Kainz, Theresa; Navickas, Edvinas; Walch, Gregor; Hutter, Herbert; Reichmann, Klaus; Fleig, Jürgen

2016-11-22

The different properties of acceptor-doped (hard) and donor-doped (soft) lead zirconate titanate (PZT) ceramics are often attributed to different amounts of oxygen vacancies introduced by the dopant. Acceptor doping is believed to cause high oxygen vacancy concentrations, while donors are expected to strongly suppress their amount. In this study, La 3+ donor-doped, Fe 3+ acceptor-doped and La 3+ /Fe 3+ -co-doped PZT samples were investigated by oxygen tracer exchange and electrochemical impedance spectroscopy in order to analyse the effect of doping on oxygen vacancy concentrations. Relative changes in the tracer diffusion coefficients for different doping and quantitative relations between defect concentrations allowed estimates of oxygen vacancy concentrations. Donor doping does not completely suppress the formation of oxygen vacancies; rather, it concentrates them in the grain boundary region. Acceptor doping enhances the amount of oxygen vacancies but estimates suggest that bulk concentrations are still in the ppm range, even for 1% acceptor doping. Trapped holes might thus considerably contribute to the charge balancing of the acceptor dopants. This could also be of relevance in understanding the properties of hard and soft PZT.

The Effect of Acceptor and Donor Doping on Oxygen Vacancy Concentrations in Lead Zirconate Titanate (PZT)

PubMed Central

Slouka, Christoph; Kainz, Theresa; Navickas, Edvinas; Walch, Gregor; Hutter, Herbert; Reichmann, Klaus; Fleig, Jürgen

2016-01-01

The different properties of acceptor-doped (hard) and donor-doped (soft) lead zirconate titanate (PZT) ceramics are often attributed to different amounts of oxygen vacancies introduced by the dopant. Acceptor doping is believed to cause high oxygen vacancy concentrations, while donors are expected to strongly suppress their amount. In this study, La3+ donor-doped, Fe3+ acceptor-doped and La3+/Fe3+-co-doped PZT samples were investigated by oxygen tracer exchange and electrochemical impedance spectroscopy in order to analyse the effect of doping on oxygen vacancy concentrations. Relative changes in the tracer diffusion coefficients for different doping and quantitative relations between defect concentrations allowed estimates of oxygen vacancy concentrations. Donor doping does not completely suppress the formation of oxygen vacancies; rather, it concentrates them in the grain boundary region. Acceptor doping enhances the amount of oxygen vacancies but estimates suggest that bulk concentrations are still in the ppm range, even for 1% acceptor doping. Trapped holes might thus considerably contribute to the charge balancing of the acceptor dopants. This could also be of relevance in understanding the properties of hard and soft PZT. PMID:28774067

Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron

DOE Office of Scientific and Technical Information (OSTI.GOV)

Surovegina, E. A., E-mail: suroveginaka@ipmras.ru; Demidov, E. V.; Drozdov, M. N.

2016-12-15

The results of analysis of the atomic composition, doping level, and hole mobility in epitaxial diamond layers when doped with boron are reported. The layers are produced by chemical-vapor deposition. The possibilities of uniform doping with boron to a level in the range 5 × 10{sup 17} to ~10{sup 20} at cm{sup –3} and of δ doping to the surface concentration (0.3–5) × 10{sup 13} at cm{sup –3} are shown. The conditions for precision ion etching of the structures are determined, and barrier and ohmic contacts to the layers are formed.

Doping optimization of polypyrrole with toluenesulfonic acid using Box-Behnken design

DOE Office of Scientific and Technical Information (OSTI.GOV)

Syed Draman, Sarifah Fauziah; Daik, Rusli; El-Sheikh, Said M.

A three-level Box-Behnken design was employed in doping optimization of polypyrrole with toluenesulfonic acid (TSA-doped PPy). The material was synthesized via chemical oxidative polymerization using pyrrole, toluenesulfonic acid (TSA) and ammonium persulfate (APS) as monomer, dopant and oxidant, respectively. The critical factors selected for this study were concentration of dopant, molar ratio between dopant to monomer (pyrrole) and concentration of oxidant. Obtaining adequate doping level of TSA-doped PPy is crucial because it affects the charge carriers for doped PPy and usually be responsible for electronic mobility along polymeric chain. Furthermore, the doping level also affects other properties such as electricalmore » and thermal conductivity. Doping level was calculated using elemental analysis. SEM images shows that the prepared TSA-doped PPy particles are spherical in shape with the diameters of about. The range of nanoparticles size is around 80-100 nm. The statistical analysis based on a Box–Behnken design showed that 0.01 mol of TSA, 1:1 mole ratio TSA to pyrrole and 0.25 M APS were the optimum conditions for sufficient doping level.« less

Electronic and magnetic properties of SnS2 monolayer doped with 4d transition metals

NASA Astrophysics Data System (ADS)

Xiao, Wen-Zhi; Xiao, Gang; Rong, Qing-Yan; Chen, Qiao; Wang, Ling-Ling

2017-09-01

We investigate the electronic structures and magnetic properties of SnS2 monolayers substitutionally doped with 4-d transition-metal through systematic first principles calculations. The doped complexes exhibit interesting electronic and magnetic behaviors, depending on the interplay between crystal field splitting, Hund's rule, and 4d levels. The system doped with Y is nonmagnetic metal. Both the Zr- and Pd-doped systems remain nonmagnetic semiconductors. Doping results in half-metallic states for Nb-, Ru-, Rh-, Ag, and Cd doped cases, and magnetic semiconductors for systems with Mo and Tc dopants. In particular, the Nb- and Mo-doped systems display long-ranged ferromagnetic ordering with Curie temperature above room temperature, which are primarily attributable to the double-exchange mechanism, and the p-d/p-p hybridizations, respectively. Moreover, The Mo-doped system has excellent energetic stability and flexible mechanical stability, and also possesses remarkable dynamic and thermal (500 K) stability. Our studies demonstrate that Nb- and Mo-doped SnS2 monolayers are promising candidates for preparing 2D diluted magnetic semiconductors, and hence will be a helpful clue for experimentalists.

Phase Separation and d Electronic Orbitals on Cyclic Degradation in Li-Mn-O Compounds: First-Principles Multiscale Modeling and Experimental Observations.

PubMed

Kim, Duho; Lim, Jin-Myoung; Park, Min-Sik; Cho, Kyeongjae; Cho, Maenghyo

2016-07-06

A combined study involving experiments and multiscale computational approaches is conducted to propose a theoretical solution for the suppression of the Jahn-Teller distortion which causes severe cyclic degradation. As-synthesized pristine and Al-doped Mn spinel compounds are the focus to understand the mechanism of the cyclic degradation in terms of the Jahn-Teller distortion, and the electrochemical performance of the Al-doped sample shows enhanced cyclic performance compared with that of the pristine one. Considering the electronic structures of the two systems using first-principles calculations, the pristine spinel suffers entirely from the Jahn-Teller distortion by Mn(3+), indicating an anisotropic electronic structure, but the Al-doped spinel exhibits an isotropic electronic structure, which means the suppressed Jahn-Teller distortion. A multiscale phase field model in nanodomain shows that the phase separation of the pristine spinel occurs to inactive Li0Mn2O4 (i.e., fully delithiated) gradually during cycles. In contrast, the Al-doped spinel does not show phase separation to an inactive phase. This explains why the Al-doped spinel maintains the capacity of the first charge during the subsequent cycles. On the basis of the mechanistic understanding of the origins and mechanism of the suppression of the Jahn-Teller distortion, fundamental insight for making tremendous cuts in the cyclic degradation could be provided for the Li-Mn-O compounds of Li-ion batteries.

Oxygen stoichiometry, phase stability, and thermodynamic behavior of the lead-doped Bi-2223 and Ag/Bi-2223 systems

NASA Astrophysics Data System (ADS)

Tetenbaum, M.; Hash, M.; Tani, B. S.; Luo, J. S.; Maroni, V. A.

1995-02-01

Electromotive-force (EMF) measurements of oxygen fugacities as a function of stoichiometry have been made in the lead-doped Bi-2223 superconducting system in the temperature range 700-815°C by means of an oxygen titration technique that employs an yttria-stabilized zirconia electrolyte. The results of our studies indicate that processing or annealing lead-doped Bi-2223 at temperatures ranging from 750 to 815°C and at oxygen partial pressures ranging from ∼ 0.02 to 0.2 atm should preserve Bi-2223 as essentially single-phase material. Thermodynamic assessments of the partial molar quantities ΔS¯( O2) andΔH¯( O2) indicate that the plateau regions in the plot of oxygen partial pressure versus oxygen stoichiometry ( x) can be represented by the diphasic CuOCu 2O system. In accord with the EMF measurements, it was found that lead-doped Bi-2223 in a silver sheath is stable at 815°C for oxygen partial pressures between 0.02 and 0.13 atm.

Thermodynamic and nonstoichiometric behavior of the lead-doped Bi-2223 system

NASA Astrophysics Data System (ADS)

Tetenbaum, M.; Hash, M.; Tani, B. S.; Luo, J. S.; Maroni, V. A.

1994-12-01

Electromotive force (EMF) measurements of oxygen fugacities as a function of stoichiometry have been made in the lead-doped Bi-2223 superconducting system in the temperature range 700-815°C by means of an oxygen titration technique. The results of our studies indicate that processing or annealing lead-doped Bi-2223 at temperatures ranging from 700 to 815°C and at oxygen partial pressures ranging from ∼0.02 to 0.2 atm should tend to preserve Bi-2223 as essentially single-phase material. Thermodynamic assessments of partial molar quantities indicate that the plateau regions can be represented by the diphasic CuOCu 2O system. In accord with the EMF measurements, it was found that lead-doped Bi-2223 in a silver sheath is stable at 815°C for oxygen partial pressures between 0.02 and 0.13 atm. Long-duration post anneals of silver-clad Bi-2223 filaments at 825°C and an oxygen partial pressure of 0.075 atm eliminated Bi-2212 intergrowths with a concomitant increase in the superconducting transition sharpness.

Thermoelectric properties of In and I doped PbTe

NASA Astrophysics Data System (ADS)

Bali, Ashoka; Chetty, Raju; Sharma, Amit; Rogl, Gerda; Heinrich, Patrick; Suwas, Satyam; Misra, Dinesh Kumar; Rogl, Peter; Bauer, Ernst; Mallik, Ramesh Chandra

2016-11-01

A systematic study of structural, microstructural, and thermoelectric properties of bulk PbTe doped with indium (In) alone and co-doped with both indium and iodine (I) has been done. X-ray diffraction results showed all the samples to be of single phase. Scanning electron microscopy (SEM) results revealed the particle sizes to be in the range of micrometers, while high resolution transmission electron microscopy was used to investigate distinct microstructural features such as interfaces, grain boundaries, and strain field domains. Hall measurement at 300 K revealed the carrier concentration ˜1019 cm-3 showing the degenerate nature which was further seen in the electrical resistivity of samples, which increased with rising temperature. Seebeck coefficient indicated that all samples were n-type semiconductors with electrons as the majority carriers throughout the temperature range. A maximum power factor ˜25 μW cm-1 K-2 for all In doped samples and Pb0.998In0.003Te1.000I0.003 was observed at 700 K. Doping leads to a reduction in the total thermal conductivity due to enhanced phonon scattering by mass fluctuations and distinct microstructure features such as interfaces, grain boundaries, and strain field domains. The highest zT of 1.12 at 773 K for In doped samples and a zT of 1.1 at 770 K for In and I co-doped samples were obtained.

Effect of Batch-to-Batch Variability on the Phase Transition of Precipitated Erbium-Doped Alumina Particles

DTIC Science & Technology

2017-11-01

Furthermore, Er-doped lasers emit in the spectral range of “ eye -safe” laser radiation, as they do not penetrate the eye and cause permanent retina damage.7...challenge. Previous studies on doped alumina ceramics used a dry mechanical method for doping ions,4,14 which led to the formation of dopant-rich...synthesis. Finally, the particles were dispersed in isopropanol to aid in drying , and filtered before being placed in an oven at 70 °C. Once dried, the

Chromium Diffusion Doping on ZnSe Crystals

NASA Technical Reports Server (NTRS)

Journigan, Troy D.; Chen, K.-T.; Chen, H.; Burger, A.; Schaffers, K.; Page, R. H.; Payne, S. A.

1997-01-01

Chromium doped zinc selenide crystal have recently been demonstrated to be a promising material for near-IR room temperature tunable lasers which have an emission range of 2-3 micrometers. In this study a new diffusion doping process has been developed for incorporation of Cr(+2) ion into ZnSe wafers. This process has been successfully performed under isothermal conditions, at temperatures above 800 C. Concentrations in excess of 10(exp 19) Cr(+2) ions/cu cm, an order of magnitude larger than previously reported in melt grown ZnSe material, have been obtained by diffusion doping, as estimated from optical absorption measurements. The diffusivity was estimated to be about 10(exp -8) sq cm/sec using a thin film diffusion model. Resistivity was derived from current-voltage measurements and in the range of 10(exp 13) and 10(exp 16) omega-cm. The emission spectra and temperature dependent lifetime data will also be presented and discussed.

Thermally and optically tunable lasing properties from dye-doped holographic polymer dispersed liquid crystal in capillaries

NASA Astrophysics Data System (ADS)

Chen, Maozhou; Dai, Haitao; Wang, Dongshuo; Yang, Yue; Luo, Dan; Zhang, Xiaodong; Liu, Changlong

2018-03-01

In this paper, we investigated tunable lasing properties from the dye-doped holographic polymer dispersed liquid crystal (HPDLC) gratings in capillaries with thermal and optical manners. The thermally tunable range of the lasing from the dye-doped HPDLC reached 8.60 nm with the temperature ranging from 23 °C to 50 °C. The optically tunable laser emission was achieved by doping azo-dye in HPDLC. The transition of azo-dye from trans- to cis-state could induce the reorientation of LC molecules after UV light irradiation, which resulted in the variation of refractive index contrast of LC-rich/polymer-rich layer in HPDLC. Experimentally, the emission wavelength of lasing showed a blueshift (about 2 nm) coupled with decreasing output intensities. The tunable laser based on HPDLC may enable more applications in laser displays, optical communication, biosensors, etc.

Thermoelectric properties of p-type sb-doped Cu2SnSe3 near room and mid temperature applications

NASA Astrophysics Data System (ADS)

Prasad, K. Shyam; Rao, Ashok; Chauhan, Nagendra S.; Bhardwaj, Ruchi; Vishwakarma, Avinash; Tyagi, Kriti

2018-02-01

In this study, we report low and mid temperature range thermoelectric properties of Sb-substituted Cu2SnSe3 compounds. The Cu2Sn1- x Sb x Se3 (0 ≤ x ≤ 0.04) alloys were prepared using conventional solid-state reaction followed by spark plasma sintering. The crystal structure was characterized using XRD and it reveals that all the samples exhibit cubic structure with space group -4/3m. The electrical transport characteristics indicate degenerate semiconducting behavior. Electrical resistivity was found to follow small polaron hopping (SPH) model in the entire temperature range of investigation. The Seebeck coefficient data reveals that the majority of charge carriers are holes and the analysis of Seebeck coefficient data gives negative values of Fermi energy indicating that the Fermi energy is below the edge of valence band. The electronic contribution ( κ e) for total thermal conductivity is found to be less than 1%. The maximum ZT value of 0.64 is observed for the sample with x = 0.03 (at 700 K) which is approximately 2.3 times that of the pristine sample.

Hall-effect measurements of metalorganic vapor-phase epitaxy-grown p-type homoepitaxial GaN layers with various Mg concentrations

NASA Astrophysics Data System (ADS)

Horita, Masahiro; Takashima, Shinya; Tanaka, Ryo; Matsuyama, Hideaki; Ueno, Katsunori; Edo, Masaharu; Suda, Jun

2016-05-01

Mg-doped p-type gallium nitride (GaN) layers with doping concentrations in the range from 6.5 × 1016 cm-3 (lightly doped) to 3.8 × 1019 cm-3 (heavily doped) were investigated by Hall-effect measurement for the analysis of hole concentration and mobility. p-GaN was homoepitaxially grown on a GaN free-standing substrate by metalorganic vapor-phase epitaxy. The threading dislocation density of the p-GaN was 4 × 106 cm-2 measured by cathodoluminescence mapping. Hall-effect measurements of p-GaN were carried out at a temperature in the range from 160 to 450 K. A low compensation ratio of less than 1% was revealed. We also obtained the depth of the Mg acceptor level of 235 meV considering the lowering effect by the Coulomb potential of ionized acceptors. The hole mobilities of 33 cm2 V-1 s-1 at 300 K and 72 cm2 V-1 s-1 at 200 K were observed in lightly doped p-GaN.

Characterization of Fe-doped SrTiO3/BaTiO3 multilayer films and their ethanol sensing applications

NASA Astrophysics Data System (ADS)

Supasai, Thidarat; Wisitsoraat, Anurat; Hodak, Satreerat

2010-03-01

Fe-doped SrTiO3/BaTiO3 multilayer films have been deposited on alumina substrate using a sol-gel spin coating technique. The field effect scanning electron microscope photographs revealed a mixture of round and facet-shaped crystals in the undoped films. This microstructure disappeared in Fe-doped films which adopted a more porous sponge-like structure. The grain size of the films decreased from 300 nm for undoped films to 100 nm and 70 nm with Fe doping concentrations of 4 and 8 wt%, respectively. The absorption edge energy for X-rays by Fe was found to be about 7121 eV consistent with Fe^2+ oxidation state. Interdigitated electrodes were applied on these films for ethanol gas sensing application. A sensitivity figure of merit based on the relative change in the resistance of the Fe-doped films 8 wt% film was found to be in the 1-3 range for ethanol doses of 100-1000 ppm when operating at 250 C and in the range of 3-10 when the operating temperature was 350 C.

Spectroscopic and fiber optic ethanol sensing properties Gd doped ZnO nanoparticles.

PubMed

Noel, J L; Udayabhaskar, R; Renganathan, B; Muthu Mariappan, S; Sastikumar, D; Karthikeyan, B

2014-11-11

We report the structural, optical and gas sensing properties of prepared pure and Gd doped ZnO nanoparticles through solgel method at moderate temperature. Structural studies are carried out by X-ray diffraction method confirms hexagonal wurtzite structure and doping induced changes in lattice parameters is observed. Optical absorption spectral studies shows red shift in the absorption peak corresponds to band-gap from 3.42 eV to 3.05 eV and broad absorption in the visible range after Gd doping is observed. Scanning electron microscopic studies shows increase in particle size where the particle diameters increase from few nm to micrometers after Gd doping. The clad modified ethanol fiber-optic sensor studies for ethanol sensing exhibits best sensitivity for the 3% Gd doped ZnO nanoparticles and the sensitivity get lowered incase of higher percentage of Gd doped ZnO sample. Copyright © 2014 Elsevier B.V. All rights reserved.

All-fiber passively Q-switched thulium-doped fiber laser by using a holmium-doped fiber as saturable absorber

NASA Astrophysics Data System (ADS)

Durán Sánchez, M.; Álvarez-Tamayo, R. I.; Posada-Ramírez, B.; Alaniz-Baylón, J.; Bravo-Huerta, E.; Santiago-Hernández, H.; Hernández-Arriaga, M. V.; Bello-Jiménez, Miguel; Ibarra-Escamilla, B.; Kuzin, E. A.

2018-02-01

We report a linear cavity all-fiber passive Q-switched thulium-doped fiber laser operating at the 2 μm wavelength range. The laser configuration is based on a thulium-doped fiber used as a gain medium and an unpumped segment of holmium-doped fiber which acts as a fiber saturable absorber. The cavity is formed by a fiber optical loop mirror and the flat end facet of the holmium-doped fiber. The fiber segments as saturable absorber is a 1-m long single mode doubleclad holmium-doped fiber. Q-switched pulses are obtained at the wavelength of 2024.5 nm with a pulse width of 1.1 μs. The pulse repetition rate increases as a linear function of the applied pump power. The maximum pulse repetition rate of 100 kHz was obtained with a pump power of 2.4 W.

Promoting mechanism of N-doped single-walled carbon nanotubes for O2 dissociation and SO2 oxidation

NASA Astrophysics Data System (ADS)

Chen, Yanqiu; Yin, Shi; Chen, Yang; Cen, Wanglai; Li, Jianjun; Yin, Huaqiang

2018-03-01

Although heteroatom doping in carbon based catalysts have recently received intensive attentions, the role of the intrinsically porous structure of practical carbon materials and their potential synergy with doping atoms are still unclear. To investigate the complex effects, a range of N-doped single-walled carbon nanotubes (SWCNTs) were used to investigate their potential use for O2 dissociation and the subsequent SO2 oxidation using density functional theory. It is found that graphite N doping can synergize with the outer surface of SWCNTs to facilitate the dissociation of O2. The barrier for the dissociation on dual graphite N-doped SWCNT-(8, 8) is as low as 0.3 eV, and the subsequent SO2 oxidation is thermodynamically favorable and kinetically feasible. These results spotlight on developing promising carboncatalyst via utilization of porous gemometry and heteroatom-doping of carbon materials simultaneously.

Two and four photon absorption and nonlinear refraction in undoped, chromium doped and copper doped ZnS quantum dots

NASA Astrophysics Data System (ADS)

Sharma, Dimple; Malik, B. P.; Gaur, Arun

2015-12-01

The ZnS quantum dots (QDs) with Cr and Cu doping were synthesized by chemical co-precipitation method. The nanostructures of the prepared undoped and doped ZnS QDs were characterized by UV-vis spectroscopy, Transmission electron microscopy (TEM) and X-ray diffraction (XRD). The sizes of QDs were found to be within 3-5 nm range. The nonlinear parameters viz. Two photon absorption coefficient (β2), nonlinear refractive index (n2), third order nonlinear susceptibility (χ3) at wavelength 532 nm and Four photon absorption coefficient (β4) at wavelength 1064 nm have been calculated by Z-scan technique using nanosecond Nd:YAG laser in undoped, Cr doped and Cu doped ZnS QDs. Higher values of nonlinear parameters for doped ZnS infer that they are potential material for the development of photonics devices and sensor protection applications.

Ultrathin ZnSe nanowires: one-pot synthesis via a heat-triggered precursor slow releasing route, controllable Mn doping and application in UV and near-visible light detection.

PubMed

Li, Dong; Xing, Guanjie; Tang, Shilin; Li, Xiaohong; Fan, Louzhen; Li, Yunchao

2017-10-12

We report herein a heat-triggered precursor slow releasing route for the one-pot synthesis of ultrathin ZnSe nanowires (NWs), which relies on the gradual dissolving of Se powder into oleylamine containing a soluble Zn precursor under heating. This route allows the reaction system to maintain a high monomer concentration throughout the entire reaction process, thus enabling the generation of ZnSe NWs with diameter down to 2.1 nm and length approaching 400 nm. The size-dependent optical properties and band-edge energy levels of the ZnSe NWs were then explored in depth by UV-visible spectroscopy and cyclic voltammetry, respectively. Considering their unique absorption properties, these NWs were specially utilized for fabricating photoelectrochemical-type photodetectors (PDs). Impressively, the PDs based on the ZnSe NWs with diameters of 2.1 and 4.5 nm exhibited excellent responses to UVA and near-visible light, respectively: both possessed ultrahigh on/off ratios (5150 for UVA and 4213 for near-visible light) and ultrawide linear response ranges (from 2.0 to 9000 μW cm -2 for UVA and 5.0 to 8000 μW cm -2 for near-visible light). Furthermore, these ZnSe NWs were selectively doped with various amounts of Mn 2+ to tune their emission properties. As a result, ZnSe NW film-based photochromic cards were creatively developed for visually detecting UVA and near-visible radiation.

Transparent Conducting Mo-Doped CdO Thin Films by Spray Pyrolysis Method for Solar Cell Applications

NASA Astrophysics Data System (ADS)

Helen, S. J.; Devadason, Suganthi; Haris, M.; Mahalingam, T.

2018-04-01

Pure and 3%, 5%, and 7% molybdenum-doped cadmium oxide (CdO) thin films have been prepared on glass substrates preheated to 400°C using a spray pyrolysis technique, then analyzed using x-ray diffraction analysis, field-emission scanning electron microscopy, ultraviolet-visible spectroscopy, and photoluminescence and Hall measurements. The films were found to have polycrystalline nature with cubic structure. The crystallite size was calculated to be ˜ 12 nm for various doping concentrations. Doping improved the optical transparency of the CdO thin film, with the 5% Mo-doped film recording the highest transmittance in the optical region. The energy bandgap deduced from optical studies ranged from 2.38 eV and 2.44 eV for different Mo doping levels. The electrical conductivity was enhanced on Mo doping, with the highest conductivity of 1.74 × 103 (Ω cm)-1 being achieved for the 5% Mo-doped CdO thin film.

Thermoelectric properties of the yttrium-doped ceramic oxide SrTiO3

NASA Astrophysics Data System (ADS)

Khan, Tamal Tahsin; Ur, Soon-Chul

2017-01-01

The doping dependence of the thermoelectric figure of merit, ZT, of the ceramic oxide SrTiO3 at high temperature has been studied. In this study, yttrium was used as the doping element. A conventional solid-state reaction method was used for the preparation of Y-doped SrTiO3. The doping level in SrTiO3 was controlled to be in the doping range of 2 - 10 mole%. Almost all the yttrium atoms incorporated into the SrTiO3 provided charge carriers, as was observed by using X-ray diffraction pattern. The relative densities of all the samples varied from 98.53% to 99.45%. The thermoelectric properties, including the electrical conductivity σ, Seebeck coefficient S, thermal conductivity k, and the figure of merit, ZT, were investigated at medium temperatures. The ZT value showed an obvious doping level dependence, in which a value as high as 0.18 is realized at 773 K for a doping of 8 mole%.

Topics in electronic structure and spectroscopy of cuprates

NASA Astrophysics Data System (ADS)

Lin, Hsin

I have applied first-principles calculations to investigate several interrelated problems concerned with the electronic structure and spectroscopy of cuprates. The specific topics addressed in this thesis are as follows. 1. By properly including doping effects beyond rigid band filling, a longstanding problem of the missing Bi-O pocket in the electronic structure of Bi2Sr2CaCu2O8 (Bi2212) is solved. The doping effect is explained in terms of Coulombic effect between layers and is a generic property of all cuprates. 2. A systematic study for Pb/O and rare-earth doping in Bi2212 is carried out to explain the experimental phase diagrams, and a possible new electron doped Bi2212 is predicted. 3. To investigate how the Mott insulators evolve into superconductors with the addition of holes, an analysis of angle-resolved photoemission (ARPES) data of La2-xSr xCuO4 is carried out over a wide doping range of x = 0.03 - 0.30. The spectrum displays the presence of the van Hove singularity (VHS) whose location in energy and three-dimensionality are in accord with the band theory predictions. A nascent metallic state is found in the lightly doped Mott insulator and develops spectral weight as doping increases. This metallic spectrum is 'universal' in the sense that its dispersion depends weakly on doping, in sharp contrast to the common expectation that dispersion is renormalized to zero at half-filling. This finding challenges existing theoretical scenarios for cuprates. 4. Self-consistent mean-field three- and four-band Hubbard models are used to study the Mott gap in electron-doped cuprates. The Hubbard terms are decomposed into a Mott-like term which describes the lifting of Cu bands due to energy cost U and a Slater-like term which describes an additional splitting of Cu bands due to antiferromagnetic (AFM) order. While no set of doping-independent parameters can explain the observed gaps for the entire doping range, the experimental results are consistent with a weakly doping dependent Hubbard U. These parameters enhance Cu character of the bonding band, producing a charge transfer gap dominated by the Slater-like term. 5. The valence bands of Bi2212 extending from about 1 to 7 eV below the Fermi energy (EF) are primarily associated with various Cu d and O p orbitals. Sorting out these bands would provide valuable information on a number of issues relevant to cuprate physics. In particular, the bonding Cu dx2-y2 band has an intimate connection with the true lower Hubbard band (LHB), yet its binding energy has never been experimentally determined. An analysis of the ARPES valence band spectrum of Bi2212 is provided. The local-density approximation (LDA) bands are compared with experiments. While O Sr and OBi bands are in good agreement with LDA, there are disagreements between experiment and LDA associated with bands originating from the CuO2 layers. A necessary correction of the LDA derived TB model is found, and this correction is shown to be related to the Mott physics in such a way that Cu dx2-y2 weight is evenly distributed into bonding and antibonding bands. 6. Scanning tunneling microscopy/spectroscopy (STM/STS) techniques have entered the realm of high-Tc's impressively by offering atomic scale real space resolution and meV resolution in bias voltages. STM/STS spectra, however, represent a complex mapping of electronic states of interest related to the CuO2 planes, since the tunneling current must reach the tip after being filtered through the overlayers (e.g. SrO and BiO in Bi2212). We have developed a material specific theoretical framework for treating the normal as well as the superconducting state where the effect of the tunneling matrix element is included by taking into account various orbitals within a few eV's of the Fermi energy (EF). The tunneling current is evaluated directly including the effect of overlayers. Our computations show the presence of strong matrix element effects, which lead to significant differences between the dI/dV spectra and the local density of states (LDOS) of CuO2 planes. For instance, the dx2-y2 signal is found to be dominated by non-vertical hopping between the CuO2 and BiO layers. A substantial electron-hole anisotropy of the tunneling spectrum, which is in accord with experiments, is naturally explained by the contribution from dz2 and other orbitals below EF.

Scintillation properties of rare-earth doped NaPO3-Al(PO3)3 glasses

NASA Astrophysics Data System (ADS)

Kuro, Tomoaki; Okada, Go; Kawaguchi, Noriaki; Fujimoto, Yutaka; Masai, Hirokazu; Yanagida, Takayuki

2016-12-01

We systematically investigated photoluminescence (PL), scintillation and dosimeter properties of rare-earth (RE) doped NaPO3-Al(PO3)3 (NAP) glasses. The NAP glasses doped with a series of RE ions (La-Yb, except Pm) with a consistent concentration (0.3 wt%) were prepared by the conventional melt-quenching method. The PL and scintillation decay time profiles showed fast (ns) and slow (μs or ms) components: the fast components from 15 to 100 ns were due to the host or 5d-4f transition emission, and the slow components from 15 μs to 5 ms were due to the 4f-4f transitions of RE. The thermally stimulated luminescence (TSL) was evaluated as a dosimeter property, and glow peaks appeared around 400 °C in all the samples. The TSL dose response function was examined in the dose range from 10 mGy to 10 Gy. Among the samples tested, Nd and Tb doped glasses showed higher signal by at least one order of magnitude than those of non-doped and other RE-doped samples. Over the dose range tested, the TSL signals are linearly related with the incident X-ray dose, showing a potential for practical applications.

The electrical, optical, structural and thermoelectrical characterization of n- and p-type cobalt-doped SnO 2 transparent semiconducting films prepared by spray pyrolysis technique

NASA Astrophysics Data System (ADS)

Bagheri-Mohagheghi, Mohammad-Mehdi; Shokooh-Saremi, Mehrdad

2010-10-01

The electrical, optical and structural properties of Cobalt (Co) doped SnO 2 transparent semiconducting thin films, deposited by the spray pyrolysis technique, have been studied. The SnO 2:Co films, with different Co-content, were deposited on glass substrates using an aqueous-ethanol solution consisting of tin and cobalt chlorides. X-ray diffraction studies showed that the SnO 2:Co films were polycrystalline only with tin oxide phases and preferential orientations along (1 1 0) and (2 1 1) planes and grain sizes in the range 19-82 nm. Optical transmittance spectra of the films showed high transparency ∼75-90% in the visible region, decreasing with increase in Co-doping. The optical absorption edge for undoped SnO 2 films was found to be 3.76 eV, while for higher Co-doped films shifted toward higher energies (shorter wavelengths) in the range 3.76-4.04 eV and then slowly decreased again to 4.03 eV. A change in sign of the Hall voltage and Seebeck coefficient was observed for a specific acceptor dopant level ∼11.4 at% in film and interpreted as a conversion from n-type to p-type conductivity. The thermoelectric electro-motive force (e.m.f.) of the films was measured in the temperature range 300-500 K and Seebeck coefficients were found in the range from -62 to +499 μVK -1 for various Co-doped SnO 2 films.

Elastic and viscous properties of the nematic dimer CB7CB

NASA Astrophysics Data System (ADS)

Babakhanova, Greta; Parsouzi, Zeinab; Paladugu, Sathyanarayana; Wang, Hao; Nastishin, Yu. A.; Shiyanovskii, Sergij V.; Sprunt, Samuel; Lavrentovich, Oleg D.

2017-12-01

We present a comprehensive set of measurements of optical, dielectric, diamagnetic, elastic, and viscous properties in the nematic (N) phase formed by a liquid crystalline dimer. The studied dimer, 1,7-bis-4-(4'-cyanobiphenyl) heptane (CB7CB), is composed of two rigid rodlike cyanobiphenyl segments connected by a flexible aliphatic link with seven methyl groups. CB7CB and other nematic dimers are of interest due to their tendency to adopt bent configurations and to form two states possessing a modulated nematic director structure, namely, the twist-bend nematic, NTB, and the oblique helicoidal cholesteric, C hOH , which occurs when the achiral dimer is doped with a chiral additive and exposed to an external electric or magnetic field. We characterize the material parameters as functions of temperature in the entire temperature range of the N phase, including the pretransitional regions near the N -NTB and N-to-isotropic (I) transitions. The splay constant K11 is determined by two direct and independent techniques, namely, detection of the Frederiks transition and measurement of director fluctuation amplitudes by dynamic light scattering (DLS). The bend K33 and twist K22 constants are measured by DLS. K33, being the smallest of the three constants, shows a strong nonmonotonous temperature dependence with a negative slope in both N-I and N -NTB pretransitional regions. The measured ratio K11/K22 is larger than 2 in the entire nematic temperature range. The orientational viscosities associated with splay, twist, and bend fluctuations in the N phase are comparable to those of nematics formed by rodlike molecules. All three show strong temperature dependence, increasing sharply near the N -NTB transition.

The role of Zn2+ dopants in the acid-basic catalysis on MgO(001) surface: Ab initio simulations of the dissociative chemisorption of R-O-R‧ and R-S-R‧ (R, R ‧ = H , CH3, C2H5)

NASA Astrophysics Data System (ADS)

Fonseca, Carla G.; Tavares, Sérgio R.; Soares, Carla V.; daFonseca, Bruno G.; Henrique, Fábio J. F. S.; Vaiss, Viviane S.; Souza, Wladmir F.; Chiaro, Sandra S. X.; Diniz, Renata; Leitão, Alexandre A.

2017-07-01

Ab initio calculations were performed to study the effect of the Zn2+ dopant on the reactivity and the catalytic activity of the MgO(001) surface toward molecular adsorption and dissociation reactions of the H2O, H2S, CH3CH2OH, CH3CH2SH and CH3SCH3 molecules. The electronic analysis showed that Zn2+ cation increased the reactivity of the surface locally. All molecules dissociate on both surfaces except for water and ethanol which only dissociate on the MgO:Zn(001) surface, confirming the increased reactivity in this surface. The ΔG ° for the dissociation reactions of the CH3CH2SH and CH3SCH3 molecules on pure MgO(001) surface is positive in the entire temperature range. On the other hand, the ΔG ° for H2S molecule is negative until 148.7 °C. In the case of the MgO:Zn(001) surface, the CH3CH2SH molecule dissociates in the entire temperature range and, for H2S molecule, the dissociation is spontaneous until 349.7 °C. The rate constants obtained for the dissociation reactions were very large because the reaction barriers are very low in both surfaces for all the studied molecules, except for CH3SCH3 molecule. The Zn-doped MgO(001) surface, besides being more reactive, presented a better catalytic activity than the MgO(001) surface for the dissociation of this molecule.

Doped polymer semiconductors with ultrahigh and ultralow work functions for ohmic contacts.

PubMed

Tang, Cindy G; Ang, Mervin C Y; Choo, Kim-Kian; Keerthi, Venu; Tan, Jun-Kai; Syafiqah, Mazlan Nur; Kugler, Thomas; Burroughes, Jeremy H; Png, Rui-Qi; Chua, Lay-Lay; Ho, Peter K H

2016-11-24

To make high-performance semiconductor devices, a good ohmic contact between the electrode and the semiconductor layer is required to inject the maximum current density across the contact. Achieving ohmic contacts requires electrodes with high and low work functions to inject holes and electrons respectively, where the work function is the minimum energy required to remove an electron from the Fermi level of the electrode to the vacuum level. However, it is challenging to produce electrically conducting films with sufficiently high or low work functions, especially for solution-processed semiconductor devices. Hole-doped polymer organic semiconductors are available in a limited work-function range, but hole-doped materials with ultrahigh work functions and, especially, electron-doped materials with low to ultralow work functions are not yet available. The key challenges are stabilizing the thin films against de-doping and suppressing dopant migration. Here we report a general strategy to overcome these limitations and achieve solution-processed doped films over a wide range of work functions (3.0-5.8 electronvolts), by charge-doping of conjugated polyelectrolytes and then internal ion-exchange to give self-compensated heavily doped polymers. Mobile carriers on the polymer backbone in these materials are compensated by covalently bonded counter-ions. Although our self-compensated doped polymers superficially resemble self-doped polymers, they are generated by separate charge-carrier doping and compensation steps, which enables the use of strong dopants to access extreme work functions. We demonstrate solution-processed ohmic contacts for high-performance organic light-emitting diodes, solar cells, photodiodes and transistors, including ohmic injection of both carrier types into polyfluorene-the benchmark wide-bandgap blue-light-emitting polymer organic semiconductor. We also show that metal electrodes can be transformed into highly efficient hole- and electron-injection contacts via the self-assembly of these doped polyelectrolytes. This consequently allows ambipolar field-effect transistors to be transformed into high-performance p- and n-channel transistors. Our strategy provides a method for producing ohmic contacts not only for organic semiconductors, but potentially for other advanced semiconductors as well, including perovskites, quantum dots, nanotubes and two-dimensional materials.

Low Sound Velocity Contributing to the High Thermoelectric Performance of Ag8SnSe6

PubMed Central

Li, Wen; Lin, Siqi; Ge, Binghui; Yang, Jiong; Zhang, Wenqing

2016-01-01

Conventional strategies for advancing thermoelectrics by minimizing the lattice thermal conductivity focus on phonon scattering for a short mean free path. Here, a design of slow phonon propagation as an effective approach for high‐performance thermoelectrics is shown. Taking Ag8SnSe6 as an example, which shows one of the lowest sound velocities among known thermoelectric semiconductors, the lattice thermal conductivity is found to be as low as 0.2 W m−1 K−1 in the entire temperature range. As a result, a peak thermoelectric figure of merit zT > 1.2 and an average zT as high as ≈0.8 are achieved in Nb‐doped materials, without relying on a high thermoelectric power factor. This work demonstrates not only a guiding principle of low sound velocity for minimal lattice thermal conductivity and therefore high zT, but also argyrodite compounds as promising thermoelectric materials with weak chemical bonds and heavy constituent elements. PMID:27980995

Low Sound Velocity Contributing to the High Thermoelectric Performance of Ag8SnSe6.

PubMed

Li, Wen; Lin, Siqi; Ge, Binghui; Yang, Jiong; Zhang, Wenqing; Pei, Yanzhong

2016-11-01

Conventional strategies for advancing thermoelectrics by minimizing the lattice thermal conductivity focus on phonon scattering for a short mean free path. Here, a design of slow phonon propagation as an effective approach for high-performance thermoelectrics is shown. Taking Ag 8 SnSe 6 as an example, which shows one of the lowest sound velocities among known thermoelectric semiconductors, the lattice thermal conductivity is found to be as low as 0.2 W m -1 K -1 in the entire temperature range. As a result, a peak thermoelectric figure of merit zT > 1.2 and an average zT as high as ≈0.8 are achieved in Nb-doped materials, without relying on a high thermoelectric power factor. This work demonstrates not only a guiding principle of low sound velocity for minimal lattice thermal conductivity and therefore high zT , but also argyrodite compounds as promising thermoelectric materials with weak chemical bonds and heavy constituent elements.

Temperature-Dependent Magnetic Response of Antiferromagnetic Doping in Cobalt Ferrite Nanostructures.

PubMed

Nairan, Adeela; Khan, Maaz; Khan, Usman; Iqbal, Munawar; Riaz, Saira; Naseem, Shahzad

2016-04-18

In this work Mn x Co 1- x Fe₂O₄ nanoparticles (NPs) were synthesized using a chemical co-precipitation method. Phase purity and structural analyses of synthesized NPs were performed by X-ray diffractometer (XRD). Transmission electron microscopy (TEM) reveals the presence of highly crystalline and narrowly-dispersed NPs with average diameter of 14 nm. The Fourier transform infrared (FTIR) spectrum was measured in the range of 400-4000 cm -1 which confirmed the formation of vibrational frequency bands associated with the entire spinel structure. Temperature-dependent magnetic properties in anti-ferromagnet (AFM) and ferromagnet (FM) structure were investigated with the aid of a physical property measurement system (PPMS). It was observed that magnetic interactions between the AFM (Mn) and FM (CoFe₂O₄) material arise below the Neel temperature of the dopant. Furthermore, hysteresis response was clearly pronounced for the enhancement in magnetic parameters by varying temperature towards absolute zero. It is shown that magnetic properties have been tuned as a function of temperature and an externally-applied field.

Thermoelectric Properties of Ca1−xGdxMnO3−δ (0.00, 0.02, and 0.05) Systems

PubMed Central

Bhaskar, Ankam; Liu, Chia-Jyi; Yuan, J. J.

2012-01-01

Polycrystalline samples of Ca1−xGdxMnO3−δ (x = 0.00, 0.02, and 0.05) have been studied by X-ray diffraction (XRD), electrical resistivity (ρ), thermoelectric power (S), and thermal conductivity (κ). All the samples were single phase with an orthorhombic structure. The Seebeck coefficient of all the samples was negative, indicating that the predominant carriers are electrons over the entire temperature range. The iodometric titration measurements indicate that the electrical resistivity of Ca1−xGdxMnO3−δ correlated well with the average valence of Mnv+ and oxygen deficiency. Among the doped samples, Ca0.98Gd0.02MnO3−δ had the highest dimensionless figure of merit 0.018 at 300 K, representing an improvement of about 125% with respect to the undoped GaMnO3−δ sample at the same temperature. PMID:22997488

Effect of heavy Ag doping on the physical properties of ZnO

NASA Astrophysics Data System (ADS)

Hou, Qingyu; Zhao, Chunwang; Jia, Xiaofang; Xu, Zhenchao

2018-04-01

The band structure, density of state and absorption spectrum of Zn1‑xAgxO (x = 0.02778, 0.04167) were calculated. Results indicated that a higher doping content of Ag led to a higher total energy, lower stability, higher formation energy, narrower bandgap, more significant red shift of the absorption spectrum, higher relative concentration of free hole, smaller hole effective mass, lower mobility and better conductivity. Furthermore, four types of model with the same doping content of double Ag-doped Zn1‑xAgxO (x = 0.125) but different manners of doping were established. Two types of models with different doping contents of double Ag-doped Zn1‑xAgxO (x = 0.0626, 0.0833) but the same manner of doping, were also established. Under the same doping content and different ordering occupations in Ag double doping, the doped system almost caused magnetic quenching upon the nearest neighbor -Ag-O-Ag- bonding at the direction partial to the a- or b-axis. Upon the next-nearest neighbor of -Ag-O-Zn-O-Ag- bonding at the direction partial to the c-axis, the total magnetic moment of the doped system increased, and the doped system reached a Curie temperature above the room-temperature. All these results indicated that the magnetic moments of Ag double-doped ZnO systems decreased with increased Ag doping content. Within the range of the mole number of the doping content of 0.02778-0.04167, a greater Ag doping content led to a narrower bandgap of the doped system and a more significant red shift in the absorption spectrum. The absorption spectrum of the doped ZnO system with interstitial Ag also shows a red shift.

Towards Isotropic Vortex Pinning in YBCO Films with Double-doping BHO-Y2O3 and BZO-Y2O3 Artificial Pining Centers

NASA Astrophysics Data System (ADS)

Gautam, Bibek; Sebastian, Mary Ann; Chen, Shihong; Haugan, Timothy; Chen, Yanbin; Xing, Zhongwen; Prestigiacomo, Joseph; Osofsky, Mike; Wu, Judy

2017-12-01

Strong and isotropic vortex pinning landscape is demanded for high field applications of YaBa2Cu3O7-x (YBCO) epitaxial thin films. Double-doping (DD) of artificial pinning centers (APCs) of mixed morphologies has been identified as a viable approach for this purpose. This work presents a comparative study on the transport critical current density J c (H, θ) of 3.0 vol.%Y2O3+2.0 (or 6.0) vol.% BaZrO3 (BZO DD) and 3.0 vol.%Y2O3+ 2.0 (or 6.0) vol.% BaHfO3 (BHO DD) films. Based on the elastic strain model, BaHfO3 (BHO) nanorods have lower rigidity than their BaZrO3 (BZO) counterparts, which means their c-axis alignment is more susceptible to the local strain generated by the secondary dopant of Y2O3. Considering the increasing strain field with higher BZO (or BHO doping), the higher susceptibility may result in a large portion of the BHO APCs moving away from perfect c-axis alignment and enhancing isotropic pinning with respect to the H orientation. This is confirmed since the BHO DD films illustrate a less pronounced J c peak at H//c-axis and hence more isotropic J c(θ) than their BZO DD counterparts. At 9.0 T, the variation of the J c across the entire θ range (0-90 degree) is less than 18% for the BHO DD film, in contrast to about 100% for the 2.0 vol.% BZO DD counterpart. At the higher BHO concentration of 6.0 vol.%, this higher tunability of the Y2O3 leads to increased ab-plane aligned BHO APCs and hence enhanced J c at H//ab-plane.

James C. McGroddy Prize Talk: Superconductivity in alkali-metal doped Carbon-60

NASA Astrophysics Data System (ADS)

Hebard, Arthur

2008-03-01

Carbon sixty (C60), which was first identified in 1985 in laser desorption experiments, is unquestionably an arrestingly beautiful molecule. The high symmetry of the 12 pentagonal and 20 hexagonal faces symmetrically arrayed in a soccer-ball like structure invites special attention and continues to stimulate animated speculation. The availability in 1990 of macroscopic amounts of purified C60 derived from carbon-arc produced soot allowed the growth and characterization of both bulk and thin-film samples. Crystalline C60 is a molecular solid held together by weak van der Waals forces. The fcc structure has a 74% packing fraction thus allowing ample opportunity (26% available volume) for the intercalation of foreign atoms into the interstitial spaces of the three dimensional host. This opportunity catalyzed much of the collaborative work amongst chemists, physicists and materials scientists at Bell Laboratories, and resulted in the discovery of superconductivity in alkali-metal doped C60 with transition temperatures (Tc) in the mid-30-kelvin range. In this talk I will review how the successes of this initial team effort stimulated a worldwide collaboration between experimentalists and theorists to understand the promise and potential of an entirely new class of superconductors containing only two elements, carbon and an intercalated alkali metal. Although the cuprates still hold the record for the highest Tc, there are still open scientific questions about the mechanism that gives rise to such unexpectedly high Tc's in the non-oxide carbon-based superconductors. The doped fullerenes have unusual attributes (e.g., narrow electronic bands, high disorder, anomalous energy scales, and a tantalizing proximity to a metal-insulator Mott transition), which challenge conventional thinking and at the same time provide useful insights into new directions for finding even higher Tc materials. The final chapter of the `soot to superconductivity' story has yet to be written.

Review on dielectric properties of rare earth doped barium titanate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ismail, Fatin Adila, E-mail: fatinadilaismail@gmail.com; Osman, Rozana Aina Maulat, E-mail: rozana@unimap.edu.my; Frontier Materials Research, Seriab, 01000 Kangar, Perlis

2016-07-19

Rare earth doped Barium Titanate (BaTiO{sub 3}) were studied due to high permittivity, excellent electrical properties and have wide usage in various applications. This paper reviewed on the electrical properties of RE doped BaTiO{sub 3} (RE: Lanthanum (La), Erbium (Er), Samarium (Sm), Neodymium (Nd), Cerium (Ce)), processing method, phase transition occurred and solid solution range for complete study. Most of the RE doped BaTiO{sub 3} downshifted the Curie temperature (T{sub C}). Transition temperature also known as Curie temperature, T{sub C} where the ceramics had a transition from ferroelectric to a paraelectric phase. In this review, the dielectric constant of La-dopedmore » BaTiO{sub 3}, Er-doped BaTiO{sub 3}, Sm-doped BaTiO{sub 3}, Nd-doped BaTiO{sub 3} and Ce-doped BaTiO{sub 3} had been proved to increase and the transition temperature or also known as T{sub C} also lowered down to room temperature as for all the RE doped BaTiO{sub 3} except for Er-doped BaTiO{sub 3}.« less

Influence of Zn doping on structural, optical and dielectric properties of LaFeO3

NASA Astrophysics Data System (ADS)

Manzoor, Samiya; Husain, Shahid

2018-05-01

The effect of Zn doping on structural, optical and dielectric properties of nano-crystalline LaFe1‑xZnxO3 (0.0 ≤ x ≤ 0.3) samples have been investigated. These samples are synthesized using conventional solid state reaction route. X-ray diffraction patterns with Rietveld analysis confirm the single phase nature of samples. Further, the sample formation has been confirmed by FTIR spectroscopy. All the samples are formed in orthorhombic crystal symmetry with Pbnm space group. The average crystallite sizes, calculated from the Scherer’s formula, lie in the range below 50 nm. Rietveld refinement technique is used to determine lattice parameters, bond lengths and unit cell volume. Williamson-Hall analysis has been performed to calculate the crystallite size and lattice strain. Crystallite sizes are found to be of nanometer range while the strain is of the order of 10‑3. Zn doping leads to the expansion of volume due to the tensile strain. Optical bandgap has been determined from Kubelka-Munk function using Tauc’s relation. Zinc doping in LaFeO3 leads to decrease in optical bandgap. Dielectric constant as a function of frequency is measured in the frequency range of 75 kHz–5 MHz. The dielectric behavior has been investigated by analyzing ‘universal dielectric response’ (UDR) model. The dielectric constant (ε‧) shows colossal value with Zn doping in the whole frequency range. However, the imaginary part (ε″) shows relaxational behavior which may be attributed to the strong correlation that exists between conduction mechanism and dielectric behavior in ferrites. Cole-Cole analysis has been done that confirms the dielectric material does not follow the ideal Debye theory but shows distribution of relaxation times. The a.c conductivity increases with frequency and with Zn doping due to the increased polaron hopping.

Evolution of electrical properties and domain configuration of Mn modified Pb(In1/2Nb1/2)O3-PbTiO3 single crystals

NASA Astrophysics Data System (ADS)

Qiao, Huimin; He, Chao; Yuan, Feifei; Wang, Zujian; Li, Xiuzhi; Liu, Ying; Guo, Haiyan; Long, Xifa

2018-04-01

The acceptor doped relaxor-based ferroelectric materials are useful for high power applications such as probes in ultrasound-guided high intensity focused ultrasound therapy. In addition, a high Curie temperature is desired because of wider temperature usage and improved temperature stability. Previous investigations have focused on Pb(Mg1/3Nb2/3)O3-PbTiO3 and Pb(Zn1/3Nb2/3)O3-PbTiO3 systems, which have a ultrahigh piezoelectric coefficient and dielectric constant, but a relatively low Curie temperature. It is desirable to study the binary relaxor-based system with a high Curie temperature. Therefore, Pb(In1/2Nb1/2)O3-PbTiO3 (PINT) single crystals were chosen to study the Mn-doped influence on their electrical properties and domain configuration. The evolution of ferroelectric hysteresis loops for doped and virgin samples exhibit the pinning effect in Mn-doped PINT crystals. The relaxation behaviors of doped and virgin samples are studied by fit of the modified Curie-Weiss law and Volgel-Fucher relation. In addition, a short-range correlation length was fitted to study the behavior of polar nanoregions based on the domain configuration obtained by piezoresponse force microscopy. Complex domain structures and smaller short-range correlation lengths (100-150 nm for Mn-doped PINT and >400 nm for pure PINT) were obtained in the Mn-doped PINT single crystals.

Carrier-induced ferromagnetism in half-metallic Co-doped ZnS-diluted magnetic semiconductor: a DFT study

NASA Astrophysics Data System (ADS)

Saikia, D.; Borah, J. P.

2018-03-01

Systematic experimental and theoretical calculations have been performed to investigate the origin of the carrier-induced ferromagnetism in the Co-doped ZnS-diluted magnetic semiconductors. The crystalline structure, morphology of the chemically synthesized Co-doped ZnS nanoparticles are evaluated using X-ray diffraction (XRD) and transmission electron microscopy (TEM) and obtained the average crystallite size in the range 5-8 nm. Fourier transform-infrared spectra reveal the characteristic Zn-S vibrations of cubic ZnS and also show the splitting of peaks with increasing Co concentration which indicates that the Co-doping level beyond 3% affects the structure of ZnS. The room temperature ferromagnetic behavior analyzed by M- H curve exhibited up to the doping level 5%, achieving due to the indirect ` p- d' exchange interactions between the localized ` d' spins of Co2+ ion and the free-delocalized carriers in the host lattice. The existence of the antiferromagnetic coupling is discernable beyond the 5% doping level, owing to the short-range super-exchange interactions between the characteristic ` d' spins of the Co2+ ions which minimize the ferromagnetic ordering. Band structure and density of states (DOS) calculations demonstrate the p- d hybridization mechanism in Co-doped ZnS system which is the main cause of realizing ferromagnetic ordering in the system and also shows the half-metallic characteristics with the combination of semiconducting and metallic nature in the spin-up and spin-down states, respectively.

Three-dimensional nitrogen-doped graphene as an ultrasensitive electrochemical sensor for the detection of dopamine

NASA Astrophysics Data System (ADS)

Feng, Xiaomiao; Zhang, Yu; Zhou, Jinhua; Li, Yi; Chen, Shufen; Zhang, Lei; Ma, Yanwen; Wang, Lianhui; Yan, Xiaohong

2015-01-01

Three-dimensional nitrogen-doped graphene (3D N-doped graphene) was prepared through chemical vapor deposition (CVD) by using porous nickel foam as a substrate. As a model, a dopamine biosensor was constructed based on the 3D N-doped graphene porous foam. Electrochemical experiments exhibited that this biosensor had a remarkable detection ability with a wide linear detection range from 3 × 10-6 M to 1 × 10-4 M and a low detection limit of 1 nM. Moreover, the fabricated biosensor also showed an excellent anti-interference ability, reproducibility, and stability.

Three-dimensional nitrogen-doped graphene as an ultrasensitive electrochemical sensor for the detection of dopamine.

PubMed

Feng, Xiaomiao; Zhang, Yu; Zhou, Jinhua; Li, Yi; Chen, Shufen; Zhang, Lei; Ma, Yanwen; Wang, Lianhui; Yan, Xiaohong

2015-02-14

Three-dimensional nitrogen-doped graphene (3D N-doped graphene) was prepared through chemical vapor deposition (CVD) by using porous nickel foam as a substrate. As a model, a dopamine biosensor was constructed based on the 3D N-doped graphene porous foam. Electrochemical experiments exhibited that this biosensor had a remarkable detection ability with a wide linear detection range from 3 × 10(-6) M to 1 × 10(-4) M and a low detection limit of 1 nM. Moreover, the fabricated biosensor also showed an excellent anti-interference ability, reproducibility, and stability.

A cladding-pumped, tunable holmium doped fiber laser.

PubMed

Simakov, Nikita; Hemming, Alexander; Clarkson, W Andrew; Haub, John; Carter, Adrian

2013-11-18

We present a tunable, high power cladding-pumped holmium doped fiber laser. The laser generated >15 W CW average power across a wavelength range of 2.043 - 2.171 μm, with a maximum output power of 29.7 W at 2.120 μm. The laser also produced 18.2 W when operating at 2.171 µm. To the best of our knowledge this is the highest power operation of a holmium doped laser at a wavelength >2.15 µm. We discuss the significance of background losses and fiber design for achieving efficient operation in holmium doped fibers.

Electron irradiation response on Ge and Al-doped SiO 2 optical fibres

NASA Astrophysics Data System (ADS)

Yaakob, N. H.; Wagiran, H.; Hossain, I.; Ramli, A. T.; Bradley, D. A.; Hashim, S.; Ali, H.

2011-05-01

This paper describes the thermoluminescence response, sensitivity, stability and reproducibility of SiO 2 optical fibres with various electron energies and doses. The TL materials that comprise Al- and Ge-doped silica fibres were used in this experiment. The TL results are compared with those of the commercially available TLD-100. The doped SiO 2 optical fibres and TLD-100 are placed in a solid phantom and irradiated with 6, 9 and 12 MeV electron beams at doses ranging from 0.2 to 4.0 Gy using the LINAC at Hospital Sultan Ismail, Johor Bahru, Malaysia. It was found that the commercially available Al- and Ge-doped optical fibres have a linear dose-TL signal relationship. The intensity of TL response of Ge-doped fibre is markedly greater than that of the Al-doped fibre.

Pseudogap and electronic structure of electron-doped Sr2IrO4

NASA Astrophysics Data System (ADS)

Moutenet, Alice; Georges, Antoine; Ferrero, Michel

2018-04-01

We present a theoretical investigation of the effects of correlations on the electronic structure of the Mott insulator Sr2IrO4 upon electron doping. A rapid collapse of the Mott gap upon doping is found, and the electronic structure displays a strong momentum-space differentiation at low doping level: The Fermi surface consists of pockets centered around (π /2 ,π /2 ) , while a pseudogap opens near (π ,0 ) . Its physical origin is shown to be related to short-range spin correlations. The pseudogap closes upon increasing doping, but a differentiated regime characterized by a modulation of the spectral intensity along the Fermi surface persists to higher doping levels. These results, obtained within the cellular dynamical mean-field-theory framework, are discussed in comparison to recent photoemission experiments and an overall good agreement is found.

Multivalent Mn-doped TiO2 thin films

NASA Astrophysics Data System (ADS)

Lin, C. Y. W.; Channei, D.; Koshy, P.; Nakaruk, A.; Sorrell, C. C.

2012-07-01

Thin films of TiO2 doped with Mn were deposited on F-doped SnO2-coated glass using spin coating. The concentration of the dopant was in the range 0-7 wt% Mn (metal basis). The films were examined in terms of the structural, chemical, and optical properties. Glancing angle X-ray diffraction data show that the films consisted of the anatase polymorph of TiO2, without any contaminant phases. The X-ray photoelectron spectroscopy data indicate the presence of Mn3+ and Mn4+ in the doped films as well as atomic disorder and associated structural distortion. Ultraviolet-visible spectrophotometry data show that the optical indirect band gap of the films decreased significantly with increasing manganese doping, from 3.32 eV for the undoped composition to 2.90 eV for that doped with 7 wt% Mn.

Variation in band gap energy and electrical analysis of double doped cobalt ferrite

NASA Astrophysics Data System (ADS)

Parveen, Azra; Agrawal, Shraddha; Azam, Ameer

2018-05-01

The Ca and Cr doped cobalt ferrite nanoparticles (Co0.9Ca0.1) (Fe0.8 Cr0.2)2O4 were synthesized by microwave gel combustion method. Microstructural studies were carried out by XRD and SEM. Structural studies suggest that the crystal system remains spinal even with the doping of calcium and chromium. The SEM image shows the spherical morphology of surface of the sample. Optical properties of Ca and Cr doped cobalt ferrite were studied by UV-visible technique in the range of 400-600 nm. The electrical conductivity of pure and doped cobalt ferrite were studied as a function of frequency and were explained on the basis of electron hopping.

Tunable photonic crystals with partial bandgaps from blue phase colloidal crystals and dielectric-doped blue phases.

PubMed

Stimulak, Mitja; Ravnik, Miha

2014-09-07

Blue phase colloidal crystals and dielectric nanoparticle/polymer doped blue phases are demonstrated to combine multiple components with different symmetries in one photonic material, creating a photonic crystal with variable and micro-controllable photonic band structure. In this composite photonic material, one contribution to the band structure is determined by the 3D periodic birefringent orientational profile of the blue phases, whereas the second contribution emerges from the regular array of the colloidal particles or from the dielectric/nanoparticle-doped defect network. Using the planewave expansion method, optical photonic bands of the blue phase I and II colloidal crystals and related nanoparticle/polymer doped blue phases are calculated, and then compared to blue phases with no particles and to face-centred-cubic and body-centred-cubic colloidal crystals in isotropic background. We find opening of local band gaps at particular points of Brillouin zone for blue phase colloidal crystals, where there were none in blue phases without particles or dopants. Particle size and filling fraction of the blue phase defect network are demonstrated as parameters that can directly tune the optical bands and local band gaps. In the blue phase I colloidal crystal with an additionally doped defect network, interestingly, we find an indirect total band gap (with the exception of one point) at the entire edge of SC irreducible zone. Finally, this work demonstrates the role of combining multiple - by symmetry - differently organised components in one photonic crystal material, which offers a novel approach towards tunable soft matter photonic materials.

Fabrication and characterization of a phosphosilicate YDF with high Yb absorbance and low background loss

NASA Astrophysics Data System (ADS)

Kim, Seong-Jin; Hujimaki, Yosuke; Taniguchi, Hirokazu; Kinoshita, Hiroaki; Sato, Kenji

2014-03-01

In this paper, we report fabrication and investigation of ytterbium-doped phosphorsilicate fiber (P co-doped YDF) with high Yb content, low numerical aperture, and low background loss. The P co-doped YDF is fabricated by MCVD using the vapor sources of Yb, SiCl4, AlCl3, and POCl3, and by the gas-phase doping method. The optical properties of this P co-doped YDF are compared with Al co-doped and Al:P co-doped YDFs with low background losses. The minimum background loss of the P co-doped YDF in the spectral range from 1100 to 1380 nm is as low as ~3 dB/km. This is nearly independent of the Yb and P contents because soot deposition and collapsing conditions are properly optimized (i.e., the P co-doped YDF from a non-optimized process shows a few hundred dB/km). The excess loss induced by PD, for the P co-doped YDF, was dramatically reduced compared to both Al co-doped and Al:P co-doped YDFs. The optical slope efficiency of the P co-doped YDF is about 80%, depending on the pumping wavelength and fiber length. The fiber colors during pumping are blue for both the P co-doped and Al:P co-doped YDFs. Based on the results from a prolonged test, the output power of the P co-doped YDF is highly stable, with an initial degradation of 2-3%; which demonstrate improvement in PD resistivity with P incorporation into the glass, compared to the Al:P co-doped YDF with degradation above 6%.

Spontaneous time reversal symmetry breaking in atomically confined two-dimensional impurity bands in silicon and germanium

NASA Astrophysics Data System (ADS)

Ghosh, Arindam

Three-dimensional bulk-doped semiconductors, in particular phosphorus (P)-doped silicon (Si) and germanium (Ge), are among the best studied systems for many fundamental concepts in solid state physics, ranging from the Anderson metal-insulator transition to the many-body Coulomb interaction effects on quantum transport. Recent advances in material engineering have led to vertically confined doping of phosphorus (P) atoms inside bulk crystalline silicon and germanium, where the electron transport occurs through one or very few atomic layers, constituting a new and unique platform to investigate many of these phenomena at reduced dimensions. In this talk I shall present results of extensive quantum transport experiments in delta-doped silicon and germanium epilayers, over a wide range of doping density that allow independent tuning of the on-site Coulomb interaction and hopping energy scales. We find that low-frequency flicker noise, or the 1 / f noise, in the electrical conductance of these systems is exceptionally low, and in fact among the lowest when compared with other low-dimensional materials. This is attributed to the physical separation of the conduction electrons, embedded inside the crystalline semiconductor matrix, from the charged fluctuators at the surface. Most importantly, we find a remarkable suppression of weak localization effects, including the quantum correction to conductivity and universal conductance fluctuations, with decreasing doping density or, equivalently, increasing effective on-site Coulomb interaction. In-plane magneto-transport measurements indicate the presence of intrinsic local spin fluctuations at low doping although no signatures of long range magnetic order could be identified. We argue that these results indicate a spontaneous breakdown of time reversal symmetry, which is one of the most fundamental and robust symmetries of nonmagnetic quantum systems. While the microscopic origin of this spontaneous time reversal symmetry breaking remains unknown, we believe this indicates a new many-body electronic phase in two-dimensionally doped silicon and germanium with a half-filled impurity band. We acknowledge financial support from Department of Science and Technology, Government of India, and Australia-India Strategic Research Fund (AISRF).

Spin tuning of electron-doped metal-phthalocyanine layers.

PubMed

Stepanow, Sebastian; Lodi Rizzini, Alberto; Krull, Cornelius; Kavich, Jerald; Cezar, Julio C; Yakhou-Harris, Flora; Sheverdyaeva, Polina M; Moras, Paolo; Carbone, Carlo; Ceballos, Gustavo; Mugarza, Aitor; Gambardella, Pietro

2014-04-09

The spin state of organic-based magnets at interfaces is to a great extent determined by the organic environment and the nature of the spin-carrying metal center, which is further subject to modifications by the adsorbate-substrate coupling. Direct chemical doping offers an additional route for tailoring the electronic and magnetic characteristics of molecular magnets. Here we present a systematic investigation of the effects of alkali metal doping on the charge state and crystal field of 3d metal ions in Cu, Ni, Fe, and Mn phthalocyanine (Pc) monolayers adsorbed on Ag. Combined X-ray absorption spectroscopy and ligand field multiplet calculations show that Cu(II), Ni(II), and Fe(II) ions reduce to Cu(I), Ni(I), and Fe(I) upon alkali metal adsorption, whereas Mn maintains its formal oxidation state. The strength of the crystal field at the Ni, Fe, and Mn sites is strongly reduced upon doping. The combined effect of these changes is that the magnetic moment of high- and low-spin ions such as Cu and Ni can be entirely turned off or on, respectively, whereas the magnetic configuration of MnPc can be changed from intermediate (3/2) to high (5/2) spin. In the case of FePc a 10-fold increase of the orbital magnetic moment accompanies charge transfer and a transition to a high-spin state.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grujić-Brojčin, M., E-mail: myramyra@ipb.ac.rs; Armaković, S.; Tomić, N.

The influence of La-doping in the range of 0.5–6.0 mol% on structural and morphological properties of TiO{sub 2} nanopowders synthesized by sol–gel routine has been investigated by XRPD, AFM, EDS and BET measurements, as well as Raman spectroscopy. The XRPD and Raman measurements have revealed the anatase phase as dominant in all nanopowders, with crystallite size decreasing from ∼ 15 nm in pure TiO{sub 2} to ∼ 12 nm in La-doped samples. The BET data suggest that all samples are fully mesoporous, with mean pore diameters in the range of ∼ 6–8 nm. The specific surface area and the complexitymore » of pore structure are greater in doped samples than in pure TiO{sub 2} sample. The spectroscopic ellipsometry has apparently shown that the band gap has been gradually increased with the increase of La content. The STM and STS techniques have been used successfully to evaluate the surface morphology and electronic properties of La-doped nanopowders. All investigated properties have been related to photocatalytic activity, tested in degradation of a metoprolol tartrate salt (0.05 mM), and induced by UV-radiation. All doped samples showed increased photocatalytic activity compared to pure TiO{sub 2}, among which the 0.65 mol% La-doped sample appeared to be the most efficient. - Highlights: • Effects of La-doping on structural, morphological and electronic properties of TiO{sub 2} nanopowders. • Surface morphology and electronic properties of La-doped nanopowders evaluated by STM/STS. • Spectroscopic ellipsometry shown gradual increase of bandgap with the increase of La content. • Photocatalytic activity of samples was tested in degradation of MET under UV light.« less

Positron Annihilation Measurements of High Temperature Superconductors

NASA Astrophysics Data System (ADS)

Jung, Kang

1995-01-01

The temperature dependence of positron annihilation parameters has been measured for basic YBCO, Dy-doped, and Pr-doped superconducting compounds. The physical properties, such as crystal structure, electrical resistance, and critical temperature, have been studied for all samples. In the basic YBCO and Dy-doped samples, the defect -related lifetime component tau_{2 } was approximately constant from room temperature to above the critical temperature and then showed a step -like decrease in the temperature range 90K { ~} 40K. No significant temperature dependence was found in the short- and long-lifetime components, tau_{1} and tau_{3}. The x-ray diffraction data showed that the crystal structure of these two samples was almost the same. These results indicated that the electronic structure changed below the critical temperature. No transition was observed in the Pr-doped YBCO sample. The advanced computer program "PFPOSFIT" for positron lifetime analysis was modified to run on the UNIX system of the University of Utah. The destruction of superconductivity with Pr doping may be due to mechanisms such as hole filling or hole localization of the charge carriers and may be related to the valence state of the Pr ion. One-parameter analyses like the positron mean lifetime parameter and the Doppler line shape parameter S also have been studied. It was found that a transition in Doppler line shape parameter S was associated with the superconducting transition temperature in basic YBCO, Dy -doped, and 0.5 Pr-doped samples, whereas no transition was observed in the nonsuperconducting Pr-doped sample. The Doppler results indicate that the average electron momentum at the annihilation sites increases as temperature is lowered across the superconducting transition range and that electronic structure change plays an important role in high temperature superconductivity.

Highly destabilized Mg-Ti-Ni-H system investigated by density functional theory and hydrogenography

NASA Astrophysics Data System (ADS)

Broedersz, C. P.; Gremaud, R.; Dam, B.; Griessen, R.; Løvvik, O. M.

2008-01-01

Using hydrogenography, we recently mapped the thermodynamic properties of a large range of compositions in the quaternary Mg-Ti-Ni-H system. The enthalpy of hydride formation of Mg-Ni alloys is significantly altered upon Ti doping. For a small range of compositions, we find a hydrogenation enthalpy ΔH=-40kJ (molH2)-1 , which is the desired enthalpy for hydrogen storage at moderate temperature and pressure. This enthalpy value is surprising since it is significantly less negative than the ΔH of the Mg-Ni and Mg-Ti hydrides. The nanostructure of the Mg-Ti-Ni-H films hinders a direct determination of the hydride phases involved by x-ray diffraction. Using density functional theory calculations for various hydrogenation reaction paths, we establish that the destabilization of the Mg-Ni-H system by Ti doping is due to the formation of Mg2Ni and Ti-Ni intermetallics in the as-deposited state, which transform into a metastable Ti-doped Mg2NiH4 phase upon hydrogenation. The Ti-doped Mg2NiH4 phase can be considered as a heavily doped semiconductor.

ac conductivity in Gd doped Pb(Zr0.53Ti0.47)O3 ceramics

NASA Astrophysics Data System (ADS)

Portelles, J.; Almodovar, N. S.; Fuentes, J.; Raymond, O.; Heiras, J.; Siqueiros, J. M.

2008-10-01

This study is focused in the conduction processes taking place in 0.6 wt % Gd doped lead zirconate titanate samples PbZr0.53Ti0.47O3:Gd (PZT53/47:Gd) in the vicinity of the morphotropic phase boundary. Doped samples show very large dielectric permittivity with respect to that of undoped ones near the transition temperature. The frequency dependent ac conductivity of PZT53/47:Gd ceramics was studied in the 30-450 °C temperature range. X-ray diffraction analyses indicate the incorporation of Gd atoms to the structure. The changes in the dielectric properties as functions of temperature of the doped samples are taken as additional evidence of the incorporation of Gd into the crystal structure. Gd acts as donor center promoting extrinsic n-type conduction. The ac conductivity behavior obeys Jonscher universal relation in the 100 Hz-1 MHz frequency range for temperatures between 30 and 300 °C. The measured conductivity values for Gd doped PZT53/47 are higher than those of pure PZT53/47. According to the correlated barrier hopping model, the preponderant conduction mechanism in the frequency-temperature response was recognized as small polarons hopping mechanism.

Dielectric loss property of strong acids doped polyaniline (PANi)

NASA Astrophysics Data System (ADS)

Amalia, Rianti; Hafizah, Mas Ayu Elita; Andreas, Manaf, Azwar

2018-04-01

In this study, strong acid doped polyaniline (PANi) has been successfully fabricated through the chemical oxidative polymerization process with various polymerization times. Nonconducting PANi resulting from the polymerization process at various polymerization times were then doped by a strong acid HClO4 to generate dielectric properties. Ammonium Persulfate (APS) as an initiator was used during Polymerization process to develop dark green precipitates which then called Emeraldine Base Polyaniline (PANi-EB). The PANi-EB was successively doped by strong acid HClO4 with dopant and PANi ratio 10:1 to enhance the electrical conductivity. The conductivity of doped PANi was evaluated by Four Point Probe. Results of evaluation showed that the conductivity values of HClO4 doped PANi were in the range 337-363 mS/cm. The dielectric properties of doped PANi were evaluated by Vector Network Analyzer (VNA) which suggested that an increase in the permittivity value in the conducting PANi. It is concluded that PANi could be a potential candidate for electromagnetic waves absorbing materials.

Optical, structural and thermal properties of bismuth nitrate doped polycarbonate composite

NASA Astrophysics Data System (ADS)

Mirji, Rajeshwari; Lobo, Blaise

2018-04-01

Bismuth nitrate (Bi(NO3)3) doped polycarbonate (PC) films were prepared by solution casting method, in the doping range varying from 0.1 wt% to 5 wt %. The prepared samples were characterized using UV-Visible spectroscopy, X-Ray Diffraction (XRD) and Differential Scanning Calorimetry (DSC). Optical band gap was calculated by analyzing the UV-Visible spectra of pure as well as doped PC. Optical band gap is found to decrease from 4.38 eV to 4.33 eV as the Bi(NO3)3 content within PC increases. XRD patterns showed an increase in the degree of crystallinity of Bi(NO3)3 doped PC, especially at 3.5 wt% and 5 wt%. DSC study showed an increase in the degradation temperature, as the doping level is increased from 0 wt% up to 0.3 wt%. A decrease in Tg is observed as the doping level of these samples increases from 0 wt% up to 5 wt%.

Holon Wigner Crystal in a Lightly Doped Kagome Quantum Spin Liquid

DOE PAGES

Jiang, Hong -Chen; Devereaux, T.; Kivelson, S. A.

2017-08-07

We address the problem of a lightly doped spin liquid through a large-scale density-matrix renormalization group study of the t–J model on a kagome lattice with a small but nonzero concentration δ of doped holes. It is now widely accepted that the undoped (δ = 0) spin-1/2 Heisenberg antiferromagnet has a spin-liquid ground state. Theoretical arguments have been presented that light doping of such a spin liquid could give rise to a high temperature superconductor or an exotic topological Fermi liquid metal. Instead, we infer that the doped holes form an insulating charge-density wave state with one doped hole permore » unit cell, i.e., a Wigner crystal. Spin correlations remain short ranged, as in the spin-liquid parent state, from which we infer that the state is a crystal of spinless holons, rather than of holes. In conclusion, our results may be relevant to kagome lattice herbertsmithite upon doping.« less

Effect of Doping on Hydrogen Evolution Reaction of Vanadium Disulfide Monolayer.

PubMed

Qu, Yuanju; Pan, Hui; Kwok, Chi Tat; Wang, Zisheng

2015-12-01

As cheap and abundant materials, transitional metal dichalcogenide monolayers have attracted increasing interests for their application as catalysts in hydrogen production. In this work, the hydrogen evolution reduction of doped vanadium disulfide monolayers is investigated based on first-principles calculations. We find that the doping elements and concentration affect strongly the catalytic ability of the monolayer. We show that Ti-doping can efficiently reduce the Gibbs free energy of hydrogen adsorption in a wide range of hydrogen coverage. The catalytic ability of the monolayer at high hydrogen coverage can be improved by low Ti-density doping, while that at low hydrogen coverage is enhanced by moderate Ti-density doping. We further show that it is much easier to substitute the Ti atom to the V atom in the vanadium disulfide (VS2) monolayer than other transitional metal atoms considered here due to its lowest and negative formation energy. It is expected that the Ti-doped VS2 monolayer may be applicable in water electrolysis with improved efficiency.

Transport Properties of La- doped SrTiO3 Ceramics Prepared Using Spark Plasma Sintering

NASA Astrophysics Data System (ADS)

Mehdizadeh Dehkordi, Arash; Bhattacharya, Sriparna; Tritt, Terry M.; Alshareef, Husam N.

2012-02-01

In this work, thermoelectric transport properties of La-doped SrTiO3 ceramics prepared using conventional solid state reaction and spark plasma sintering have been investigated. Room temperature power factor of single crystal strontium titanate (SrTiO3), comparable to that of Bi2Te3, has brought new attention to this perovskite-type transition metal-oxide as a potential n-type thermoelectric for high temperature applications. Electronic properties of this model complex oxide, SrTiO3 (ABO3), can be tuned in a wide range through different doping mechanisms. In addition to A site (La-doped) or B site (Nb-doped) substitutional doping, introducing oxygen vacancies plays an important role in electrical and thermal properties of these structures. Having multiple doping mechanisms makes the transport properties of these perovskites more dependent on preparation parameters. The effect of these synthesis parameters and consolidation conditions on the transport properties of these materials has been studied.

Optical and Electrical Properties of Sn-Doped Zinc Oxide Single Crystals

DOE PAGES

Haseman, M. S.; Saadatkia, Pooneh; Warfield, J. T.; ...

2017-11-28

Here, Sn dopant in ZnO may significantly improve the n-type conductivity of ZnO through a characteristic double effect. However, studies on bulk Sn-doped ZnO are rare, and the effect of Sn doping on the optoelectronic properties of bulk ZnO is not well understood. In this work, the effect of Sn doping on the optical and electrical properties of ZnO bulk single crystals was investigated through optical absorption spectroscopy, Hall-effect measurements, and thermoluminescence (TL) spectroscopy. Undoped and Sn-doped ZnO single crystals were grown by chemical vapor transport method and characterized by x-ray diffraction analysis. The Sn doping level in the crystalsmore » was evaluated by inductively coupled plasma mass spectroscopy measurements. Hall-effect measurements revealed an increase in conductivity and carrier concentration with increasing Sn doping, while TL measurements identified a few donor species in the crystals with donor ionization energy ranging from 35 meV to 118 meV. Increasing Sn doping was also associated with a color change of single crystals from colorless to dark blue.« less

Investigation of p-type depletion doping for InGaN/GaN-based light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhang, Yiping; Zhang, Zi-Hui; Tan, Swee Tiam; Hernandez-Martinez, Pedro Ludwig; Zhu, Binbin; Lu, Shunpeng; Kang, Xue Jun; Sun, Xiao Wei; Demir, Hilmi Volkan

2017-01-01

Due to the limitation of the hole injection, p-type doping is essential to improve the performance of InGaN/GaN multiple quantum well light-emitting diodes (LEDs). In this work, we propose and show a depletion-region Mg-doping method. Here we systematically analyze the effectiveness of different Mg-doping profiles ranging from the electron blocking layer to the active region. Numerical computations show that the Mg-doping decreases the valence band barrier for holes and thus enhances the hole transportation. The proposed depletion-region Mg-doping approach also increases the barrier height for electrons, which leads to a reduced electron overflow, while increasing the hole concentration in the p-GaN layer. Experimentally measured external quantum efficiency indicates that Mg-doping position is vitally important. The doping in or adjacent to the quantum well degrades the LED performance due to Mg diffusion, increasing the corresponding nonradiative recombination, which is well supported by the measured carrier lifetimes. The experimental results are well numerically reproduced by modifying the nonradiative recombination lifetimes, which further validate the effectiveness of our approach.

Effect of Mn doping on the temperature-dependent anomalous giant dielectric behavior of CaCu3Ti4O12

NASA Astrophysics Data System (ADS)

Kim, C. H.; Jang, Y. H.; Seo, S. J.; Song, C. H.; Son, J. Y.; Yang, Y. S.; Cho, J. H.

2012-06-01

We report dielectric properties and dielectric relaxation behaviors of Mn-substituted CaCu3Ti4O12 (CCTO) on Cu sites. While CCTO exhibits the giant dielectric constant and low dielectric loss in a wide temperature range, drastic suppression of the dielectric constant in Mn-doped CCTO (CCMTO) samples have been observed in temperature and frequency dependencies of dielectric properties with two possible origins as Mn doping increases. The observed suppression of dielectric response in the low Mn doping differs from the heavy doping of Mn in CCMTO samples. The low-Mn-doped CCMTO samples (x=0.01 and 0.02) show that the relaxation time and the activation energy Ea were slightly reduced due to a decreased contribution from the density of the dipolar effect. However, in heavily doped CCMTO samples (x=0.03, 0.04, and 0.05), the dielectric response, relaxation time, and Ea were significantly decreased, suggesting Mn doping plays a significant role in the destruction of the intrinsic dipolar effect.

High p-type doping, mobility, and photocarrier lifetime in arsenic-doped CdTe single crystals

NASA Astrophysics Data System (ADS)

Nagaoka, Akira; Kuciauskas, Darius; McCoy, Jedidiah; Scarpulla, Michael A.

2018-05-01

Group-V element doping is promising for simultaneously maximizing the hole concentration and minority carrier lifetime in CdTe for thin film solar cells, but there are roadblocks concerning point defects including the possibility of self-compensation by AX metastability. Herein, we report on doping, lifetime, and mobility of CdTe single crystals doped with As between 1016 and 1020 cm-3 grown from the Cd solvent by the travelling heater method. Evidence consistent with AX instability as a major contributor to compensation in samples doped below 1017 cm-3 is presented, while for higher-doped samples, precipitation of a second phase on planar structural defects is also observed and may explain spatial variation in properties such as lifetime. Rapid cooling after crystal growth increases doping efficiency and mobility for times up to 20-30 days at room temperature with the highest efficiencies observed close to 45% and a hole mobility of 70 cm2/Vs at room temperature. A doping limit in the low 1017/cm3 range is observed for samples quenched at 200-300 °C/h. Bulk minority carrier lifetimes exceeding 20 ns are observed for samples doped near 1016 cm-3 relaxed in the dark and for unintentionally doped samples, while a lifetime of nearly 5 ns is observed for 1018 cm-3 As doping. These results help us to establish limits on properties expected for group-V doped CdTe polycrystalline thin films for use in photovoltaics.

Dosimetric properties of germanium doped calcium borate glass subjected to 6 MV and 10 MV X-ray irradiations

NASA Astrophysics Data System (ADS)

Tengku Kamarul Bahri, T. N. H.; Wagiran, H.; Hussin, R.; Saeed, M. A.; Hossain, I.; Ali, H.

2014-10-01

Germanium doped calcium borate glasses are investigated in term of thermoluminescence properties to seek their possibility to use as glass radiation dosimeter. The samples were exposed to 6 MV, and 10 MV photon beams in a dose range of 0.5-4.0 Gy. There is a single and broad thermoluminescence glow curve that exhibits its maximum intensity at about 300 °C. Linear dose response behavior has been found in this dose range for the both photon energies. Effective atomic number, TL sensitivity, and reproducibility have also been studied. It is found that the sensitivity of germanium doped sample at 6 MV is only 1.28% and it is superior to the sensitivity at 10 MV. The reproducibility of germanium doped sample is good with a percentage of relative error less than 10%. The results indicate that this glass has a potential to be used as a radiation dosimetry, especially for application in radiotherapy.

Colossal dielectric permittivity in (Al + Nb) co-doped rutile SnO2 ceramics with low loss at room temperature

NASA Astrophysics Data System (ADS)

Song, Yongli; Wang, Xianjie; Zhang, Xingquan; Qi, Xudong; Liu, Zhiguo; Zhang, Lingli; Zhang, Yu; Wang, Yang; Sui, Yu; Song, Bo

2016-10-01

The exploration of colossal dielectric permittivity (CP) materials with low dielectric loss in a wide range of frequencies/temperatures continues to attract considerable interest. In this paper, we report CP in (Al + Nb) co-doped rutile SnO2 ceramics with a low dielectric loss at room temperature. Al0.02Nb0.05Sn0.93O2 and Al0.03Nb0.05Sn0.92O2 ceramics exhibit high relative dielectric permittivities (above 103) and low dielectric losses (0.015 < tan δ < 0.1) in a wide range of frequencies and at temperatures from 140 to 400 K. Al doping can effectively modulate the dielectric behavior by increasing the grain and grain boundary resistances. The large differences in the resistance and conductive activation energy of the grains and grain boundaries suggest that the CP in co-doped SnO2 ceramics can be attributed to the internal barrier layer capacitor effect.

Influence of Chromium Doping on Electrical and Magnetic Behavior of Nd0.5Sr0.5MnO3 System

NASA Astrophysics Data System (ADS)

Lalitha, G.; Pavan Kumar, N.; Venugopal Reddy, P.

2018-04-01

With a view to understand the influence of chromium doping at the Mn site on the electrical and magnetic behavior of the Nd0.5Sr0.5MnO3 manganite system, a series of samples were prepared by the citrate sol-gel route method. The samples were characterized structurally by XRD. A systematic investigation of electrical resistivity over a temperature range 5-300 K was carried out mainly to understand the magneto-transport behavior in these materials. Studies on the variation of magnetization with temperature over a temperature range 80-330 K were undertaken. Investigation of magnetization at different magnetic fields at two different temperatures, viz. 80 and 300 K, was also carried out. The results show that chromium doping gave typical electrical and magnetic properties. It has been concluded that the coexistence of charge ordered and ferromagnetic phases induced by chromium doping plays an important role in the low-temperature behavior of the system.

Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih

Here, we discuss the engineering of p-AlGaN cladding layers for achieving efficient tunnel-injected III-Nitride ultraviolet light emitting diodes (UV LEDs) in the UV-A spectral range. We show that the capacitance-voltage measurements can be used to estimate the compensation and doping in the p-AlGaN layers located between the multi-quantum well region and the tunnel junction layer. By increasing the p-type doping concentration to overcome the background compensation, on-wafer external quantum efficiency and wall-plug efficiency of 3.37% and 1.62%, respectively, were achieved for the tunnel-injected UV LEDs emitting at 325 nm. We also show that interband tunneling hole injection can be usedmore » to realize UV LEDs without any acceptor doping. The work discussed here provides new understanding of hole doping and transport in AlGaN-based UV LEDs and demonstrates the excellent performance of tunnel-injected LEDs for the UV-A wavelength range.« less

Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes

DOE PAGES

Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih; ...

2016-11-09

Here, we discuss the engineering of p-AlGaN cladding layers for achieving efficient tunnel-injected III-Nitride ultraviolet light emitting diodes (UV LEDs) in the UV-A spectral range. We show that the capacitance-voltage measurements can be used to estimate the compensation and doping in the p-AlGaN layers located between the multi-quantum well region and the tunnel junction layer. By increasing the p-type doping concentration to overcome the background compensation, on-wafer external quantum efficiency and wall-plug efficiency of 3.37% and 1.62%, respectively, were achieved for the tunnel-injected UV LEDs emitting at 325 nm. We also show that interband tunneling hole injection can be usedmore » to realize UV LEDs without any acceptor doping. The work discussed here provides new understanding of hole doping and transport in AlGaN-based UV LEDs and demonstrates the excellent performance of tunnel-injected LEDs for the UV-A wavelength range.« less

Hybrid density functional theory band structure engineering in hematite

NASA Astrophysics Data System (ADS)

Pozun, Zachary D.; Henkelman, Graeme

2011-06-01

We present a hybrid density functional theory (DFT) study of doping effects in α-Fe2O3, hematite. Standard DFT underestimates the band gap by roughly 75% and incorrectly identifies hematite as a Mott-Hubbard insulator. Hybrid DFT accurately predicts the proper structural, magnetic, and electronic properties of hematite and, unlike the DFT+U method, does not contain d-electron specific empirical parameters. We find that using a screened functional that smoothly transitions from 12% exact exchange at short ranges to standard DFT at long range accurately reproduces the experimental band gap and other material properties. We then show that the antiferromagnetic symmetry in the pure α-Fe2O3 crystal is broken by all dopants and that the ligand field theory correctly predicts local magnetic moments on the dopants. We characterize the resulting band gaps for hematite doped by transition metals and the p-block post-transition metals. The specific case of Pd doping is investigated in order to correlate calculated doping energies and optical properties with experimentally observed photocatalytic behavior.

Mechanical behavior of glass/epoxy composite laminate with varying amount of MWCNTs under different loadings

NASA Astrophysics Data System (ADS)

Singh, K. K.; Rawat, Prashant

2018-05-01

This paper investigates the mechanical response of three phased (glass/MWCNTs/epoxy) composite laminate under three different loadings. Flexural strength, short beam strength and low-velocity impact (LVI) testing are performed to find an optimum doping percentage value for maximum enhancement in mechanical properties. In this work, MWCNTs were used as secondary reinforcement for three-phased composite plate. MWCNT doping was done in a range of 0–4 wt% of the thermosetting matrix system. Symmetrical design eight layered glass/epoxy laminate with zero bending extension coupling laminate was fabricated using a hybrid method i.e. hand lay-up technique followed by vacuum bagging method. Ranging analysis of MWCNT mixing highlighted the enhancement in flexural, short beam strength and improvement in damage tolerance under LVI loading. While at higher doping wt%, agglomeration of MWCNTs are observed. Results of mechanical testing proposed an optimized doping value for maximum strength and damage resistance of the laminate.

Magnetic, electronic, optical, and photocatalytic properties of nonmetal- and halogen-doped anatase TiO2 nanotubes

NASA Astrophysics Data System (ADS)

Fadlallah, M. M.

2017-05-01

The structure stability, magnetic, electronic, optical, and photocatalytic properties of nonmetal (B, C, N, P, and S), and halogen (F, Cl, Br, and I)-doped anatase TiO2 nanotubes (TNTs) have been investigated using spin polarized density functional theory. The N- and F-doped TNTs are the most stable among other doped TNTs. It is found that the magnetic moment of doped TNT is the difference between the number of the valence electrons of the dopant and host anion. All dopants decrease the band gap of TNT. The decrease in the band gap of nonmetal (C, N, P, and S)-doped TNTs, in particular N and P, is larger than that of halogen-doped TNTs due to the created states of the nonmetal dopant in the band gap. There is a good agreement between the calculation results and the experimental observations. Even though C-, N-, and P-doped TNTs have the lowest band gap, they cannot be used as a photocatalysis for water splitting. The B-, S-, and I-doped TiO2 nanotubes are of great potential as candidates for water splitting in the visible light range.

Effect of Pr3+doping on key properties of CdO thin films deposited by spray pyrolysis using perfume atomizer

NASA Astrophysics Data System (ADS)

Ravikumar, M.; Chandramohan, R.; Kumar, K. Deva Arun; Valanarasu, S.; Kathalingam, A.; Ganesh, V.; Shkir, Mohd.; AlFaify, S.; Algarni, H.

2018-07-01

High quality Cadmium oxide thin films doped with Praseodymium (Pr) were prepared using perfume atomizer based spray pyrolysis technique at substrate temperature near 350 °C. Structural analysis of films was examined by XRD and confirmed that the films are cubic in structure. All un-doped and doped films were good crystalline in nature with smooth and flat surface without significant modifications owed to doping. Optical transmittances of doped films was decrease in the visible and IR range with increasing Pr doping concentration. Band gap widened from 2.42 to 2.20 eV when doped with Pr from 0 to 5 at. %. In addition, the photoluminescence property of the films was also observed. Further, the electrical studies were performed on pure and doped samples Viz., the electrical resistivity, carrier concentration (ρ) and Hall mobility (μ). It confirmed that the deposited films has good structural environments in terms of grain size, absolute stress correspond and low resistivity. Current-voltage measurements on the nanostructured Al/Pr-nCdO/p-Si/Al device showed a non-linear electric characteristics indicating diode like behavior.

Dielectric characteristics of Mn-doped LaTiO3+δ ceramics

NASA Astrophysics Data System (ADS)

Chen, Yan; Cui, Yimin

A series of ceramic composites of Mn-doped La1- x MnxTiO3+ δ and LaMnxTi1- x O3+ δ (x = 0.1, 0.2) were synthesized by conventional solid-state reaction method. The low-frequency complex dielectric properties of the composites were investigated as functions of temperature (77 K <= T <= 360 K) and frequency (100 Hz <= f <= 1 MHz), respectively. The dielectric constant of A-site doped samples is higher than that of B-site doped samples. The loss tangent of low doped samples is much less than that of high doped samples. The A-site doped composites exhibit intrinsic dielectric response with a dielectric constant of 40 in the temperature below 250 K. Interestingly, the dielectric constants of B-site doped ceramics increase slightly in the temperature range from 77 to 360 K. And it is clearly observed that extraordinarily high dielectric loss tangent ( 6) appear at low frequency (100 Hz) in LaMn0.2Ti0.8O3+ δ , which is 8 times larger than that of LaMn0.1Ti0.9O3+ δ , which indicates that the doped content can affect the intrinsic dielectric characteristics significantly.

Measurement of carrier transport and recombination parameter in heavily doped silicon

NASA Technical Reports Server (NTRS)

Swanson, Richard M.

1986-01-01

The minority carrier transport and recombination parameters in heavily doped bulk silicon were measured. Both Si:P and Si:B with bulk dopings from 10 to the 17th and 10 to the 20th power/cu cm were studied. It is shown that three parameters characterize transport in bulk heavily doped Si: the minority carrier lifetime tau, the minority carrier mobility mu, and the equilibrium minority carrier density of n sub 0 and p sub 0 (in p-type and n-type Si respectively.) However, dc current-voltage measurements can never measure all three of these parameters, and some ac or time-transient experiment is required to obtain the values of these parameters as a function of dopant density. Using both dc electrical measurements on bipolar transitors with heavily doped base regions and transients optical measurements on heavily doped bulk and epitaxially grown samples, lifetime, mobility, and bandgap narrowing were measured as a function of both p and n type dopant densities. Best fits of minority carrier mobility, bandgap narrowing and lifetime as a function of doping density (in the heavily doped range) were constructed to allow accurate modeling of minority carrier transport in heavily doped Si.

Doping-induced change of optical properties in underdoped cuprate superconductors

NASA Astrophysics Data System (ADS)

Liu, H. L.; Quijada, M. A.; Zibold, A. M.; Yoon, Y.-D.; Tanner, D. B.; Cao, G.; Crow, J. E.; Berger, H.; Margaritondo, G.; Forró, L.; O, Beom-Hoan; Markert, J. T.; Kelly, R. J.; Onellion, M.

1999-01-01

We report on the ab-plane optical reflectance measurements of single crystals of Y-doped 0953-8984/11/1/020/img15 and Pr-doped 0953-8984/11/1/020/img16 over a wide frequency range from 80 to 0953-8984/11/1/020/img17 (10 meV-5 eV) and at temperatures between 20 and 300 K. Y and Pr doping both decrease the hole concentration in the 0953-8984/11/1/020/img18 planes. This has allowed us to investigate the evolution of ab-plane charge dynamics at doping levels ranging from heavily underdoped to nearly optimally doped. Our results of the low-frequency optical conductivity and spectral weight do not show any features associated with the normal-state pseudogap. Instead, one-component analysis for the optical conductivity shows the low-frequency depression in the scattering rate at 0953-8984/11/1/020/img19, signalling entry into the pseudogap state. Alternatively, no clear indications of the normal-state pseudogap are detected in the temperature-dependent zero-frequency free-carrier scattering rate by using two-component analysis. In the superconducting state, there is also no convincing evidence of superconducting gap absorption in all spectra. We find that there is a `universal correlation' between the numbers of carriers and the transition temperature. This correlation holds whether one considers the number of carriers in the superfluid or the total number of carriers.

Microscopic origin of the magnetoelectronic phase separation in Sr-doped LaCoO3

NASA Astrophysics Data System (ADS)

Németh, Zoltán; Szabó, András; Knížek, Karel; Sikora, Marcin; Chernikov, Roman; Sas, Norbert; Bogdán, Csilla; Nagy, Dénes Lajos; Vankó, György

2013-07-01

The nanoscopic magnetoelectronic phase separation in doped La1-xSrxCoO3 perovskites was studied with local probes. The phase separation is directly observed by Mössbauer spectroscopy in the studied doping range of 0.05 ≤ x ≤ 0.25 both at room temperature and in the low-temperature magnetic phase. Extended with current synchrotron-based x-ray spectroscopies, these data help to characterize the volume as well as the local electric and magnetic properties of the distinct phases. A simple model based on a random distribution of the doping Sr ions describes well both the evolution of the separated phases and the variation of the Co spin state. The experiments suggest that Sr doping initiates small droplets and a high degree of doping-driven cobalt spin-state transition, while the Sr-free second phase vanishes rapidly with increasing Sr content.

Toward deep blue nano hope diamonds: heavily boron-doped diamond nanoparticles.

PubMed

Heyer, Steffen; Janssen, Wiebke; Turner, Stuart; Lu, Ying-Gang; Yeap, Weng Siang; Verbeeck, Jo; Haenen, Ken; Krueger, Anke

2014-06-24

The production of boron-doped diamond nanoparticles enables the application of this material for a broad range of fields, such as electrochemistry, thermal management, and fundamental superconductivity research. Here we present the production of highly boron-doped diamond nanoparticles using boron-doped CVD diamond films as a starting material. In a multistep milling process followed by purification and surface oxidation we obtained diamond nanoparticles of 10-60 nm with a boron content of approximately 2.3 × 10(21) cm(-3). Aberration-corrected HRTEM reveals the presence of defects within individual diamond grains, as well as a very thin nondiamond carbon layer at the particle surface. The boron K-edge electron energy-loss near-edge fine structure demonstrates that the B atoms are tetrahedrally embedded into the diamond lattice. The boron-doped diamond nanoparticles have been used to nucleate growth of a boron-doped diamond film by CVD that does not contain an insulating seeding layer.

Intralayer doping effects on the high-energy magnetic correlations in NaFeAs

DOE PAGES

Pelliciari, Jonathan; Huang, Yaobo; Das, Tanmoy; ...

2016-04-26

We used resonant inelastic x-ray scattering (RIXS) and dynamical susceptibility calculations to study the magnetic excitations in NaFe 1$-$xCo xAs ( x=0 , 0.03, and 0.08). Despite a relatively low ordered magnetic moment, collective magnetic modes are observed in parent compounds (x=0) and persist in optimally (x= 0.03) and overdoped (x = 0.08) samples. Their magnetic bandwidths are unaffected by doping within the range investigated. High-energy magnetic excitations in iron pnictides are robust against doping and present irrespectively of the ordered magnetic moment. Nonetheless, Co doping slightly reduces the overall magnetic spectral weight, differently from previous studies on hole-doped BaFemore » 2As 2 , where it was observed constant. Finally, we demonstrate that the doping evolution of magnetic modes is different for the dopants being inside or outside the Fe-As layer.« less

Electrical characterization of 6H crystalline silicon carbide. M.S. Thesis Final Report

NASA Technical Reports Server (NTRS)

Lempner, Stephen E.

1994-01-01

Crystalline silicon carbide (SiC) substrates and epilayers, undoped as well as n- and p-doped, have been electrically characterized by performing Hall effect and resistivity measurements (van der Pauw) over the temperature range of approximately 85 K to 650 K (200 K to 500 K for p-type sample). By fitting the measured temperature dependent carrier concentration data to the single activation energy theoretical model: (1) the activation energy for the nitrogen donor ranged from 0.078 eV to 0.101 eV for a doping concentration range of 10(exp 17) cm(exp -3) to 10(exp 18) cm(exp -3) and (2) the activation energy for the aluminum acceptor was 0.252 eV for a doping concentration of 4.6 x 10(exp 18) cm(exp -3). By fitting the measured temperature dependent carrier concentration data to the double activation energy level theoretical model for the nitrogen donor: (1) the activation energy for the hexagonal site was 0.056 eV and 0.093 eV corresponding to doping concentrations of 3.33 x 10 (exp 17) cm(exp -3) and 1.6 x 10(exp 18) cm(exp -3) and (2) the activation energy for the cubic site was 0.113 and 0.126 eV corresponding to doping concentrations of 4.2 x 10(exp 17) cm(exp -3) and 5.4 x 10(exp 18) cm(exp -3).

Growth and characterization of red-green-blue cathodoluminescent ceramic films

NASA Astrophysics Data System (ADS)

Gozzi, Daniele; Latini, Alessandro; Salviati, Giancarlo; Armani, Nicola

2006-06-01

Gd2O3 and Y2O3 films, respectively, doped with Eu3+, Tb3+, and Tm3+ have been grown by the electron beam physical vapor codeposition technique on optically polished quartz substrates. The film samples have been doped at different concentrations by the corresponding rare-earth oxides. The concentration range explored is from 0.9% to 9.8% on 18 samples. For each film sample an extended characterization has been performed by thin film-x-ray diffraction, scanning electron microscopy, energy dispersion spectroscopy, cathodoluminescence spectroscopy, and color coordinate analysis. Y2O3 films display the most intense red-green-blue (RGB) emission and their film morphology and structure are more compact and crystalline with respect to Gd2O3 monoclinic films. Eu3+ and Tb3+ doped Y2O3 films grow oriented along the (222) direction. The ratios between the intensities of the electric dipole and magnetic dipole transitions have been also evaluated. The blue emission of Tm3+ doped Gd2O3 is lacking in the dopant concentration range from 1.6% to 7.6%, whereas it is present in Tm3+ doped Y2O3 films, at approximately the same dopant concentration range (1.9%-9.8%). Commission Internationale de l'Eclairage plot of the color coordinates of all the RGB film samples has been reported together with the RGB phosphor standard used in cathodic ray tube TV screens.

Study on electrical structure and magneto-optical properties of W-doped ZnO

NASA Astrophysics Data System (ADS)

Li, Yong; Hou, Qingyu; Zhao, Chunwang; Xu, Zhenchao

2018-04-01

For W-doping amounts ranging from 0.0417 to 0.0833, experimental UV-visible absorption spectra blue shift and red shift results have been reported in the literatures. However, there is few literature reported research on magnetic mechanism. To solve this problem, this study investigates the disagreement about blue shift and red shift results and research on magnetic mechanism. The band structures, density of states, absorption spectra and magnetism have been investigated using first-principles planewave ultrasoft pseudopotential method based on the density functional theory. The calculated results showed that increased W-doping amounts first increase the volumes, and then reduce the volumes, decrease the formation energies, and stabilize the doped system. The band gaps become narrower and the absorption spectrum exhibits a significant red shift in UV and visible light emission. Moreover, the covalent bond vertical to c-axis strengthens, and the ionic bond parallel to c-axis weakens. Increased W-doping amounts decrease the magnetism of doped system. The magnetism of doped system originates from the electron exchange among W-5d, O-2p and Zn-3d orbitals of the W-doped ZnO. In W double-doped system, the ferromagnetic Curie temperature can be above room temperature when the doped system has a longer W-W distance.

Highly Al-doped TiO{sub 2} nanoparticles produced by Ball Mill Method: structural and electronic characterization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Santos, Desireé M. de los, E-mail: desire.delossantos@uca.es; Navas, Javier, E-mail: javier.navas@uca.es; Sánchez-Coronilla, Antonio

2015-10-15

Highlights: • Highly Al-doped TiO{sub 2} nanoparticles were synthesized using a Ball Mill Method. • Al doping delayed anatase to rutile phase transformation. • Al doping allow controlling the structural and electronic properties of nanoparticles. - Abstract: This study presents an easy method for synthesizing highly doped TiO{sub 2} nanoparticles. The Ball Mill method was used to synthesize pure and Al-doped titanium dioxide, with an atomic percentage up to 15.7 at.% Al/(Al + Ti). The samples were annealed at 773 K, 973 K and 1173 K, and characterized using ICP-AES, XRD, Raman spectroscopy, FT-IR, TG, STEM, XPS, and UV–vis spectroscopy.more » The effect of doping and the calcination temperature on the structure and properties of the nanoparticles were studied. The results show high levels of internal doping due to the substitution of Ti{sup 4+} ions by Al{sup 3+} in the TiO{sub 2} lattice. Furthermore, anatase to rutile transformation occurs at higher temperatures when the percentage of doping increases. Therefore, Al doping allows us to control the structural and electronic properties of the nanoparticle synthesized. So, it is possible to obtain nanoparticles with anatase as predominant phase in a higher range of temperature.« less

Electrically tunable laser based on oblique heliconical cholesteric liquid crystal

PubMed Central

Xiang, Jie; Varanytsia, Andrii; Minkowski, Fred; Paterson, Daniel A.; Storey, John M. D.; Imrie, Corrie T.; Lavrentovich, Oleg D.; Palffy-Muhoray, Peter

2016-01-01

A cholesteric liquid crystal (CLC) formed by chiral molecules represents a self-assembled one-dimensionally periodic helical structure with pitch p in the submicrometer and micrometer range. Because of the spatial periodicity of the dielectric permittivity, a CLC doped with a fluorescent dye and pumped optically is capable of mirrorless lasing. An attractive feature of a CLC laser is that the pitch p and thus the wavelength of lasing λ¯ can be tuned, for example, by chemical composition. However, the most desired mode to tune the laser, by an electric field, has so far been elusive. Here we present the realization of an electrically tunable laser with λ¯ spanning an extraordinarily broad range (>100 nm) of the visible spectrum. The effect is achieved by using an electric-field-induced oblique helicoidal (OH) state in which the molecules form an acute angle with the helicoidal axis rather than align perpendicularly to it as in a field-free CLC. The principal advantage of the electrically controlled CLCOH laser is that the electric field is applied parallel to the helical axis and thus changes the pitch but preserves the single-harmonic structure. The preserved single-harmonic structure ensures efficiency of lasing in the entire tunable range of emission. The broad tuning range of CLCOH lasers, coupled with their microscopic size and narrow line widths, may enable new applications in areas such as diagnostics, sensing, microscopy, displays, and holography. PMID:27807135

Electrically tunable laser based on oblique heliconical cholesteric liquid crystal.

PubMed

Xiang, Jie; Varanytsia, Andrii; Minkowski, Fred; Paterson, Daniel A; Storey, John M D; Imrie, Corrie T; Lavrentovich, Oleg D; Palffy-Muhoray, Peter

2016-11-15

A cholesteric liquid crystal (CLC) formed by chiral molecules represents a self-assembled one-dimensionally periodic helical structure with pitch [Formula: see text] in the submicrometer and micrometer range. Because of the spatial periodicity of the dielectric permittivity, a CLC doped with a fluorescent dye and pumped optically is capable of mirrorless lasing. An attractive feature of a CLC laser is that the pitch [Formula: see text] and thus the wavelength of lasing [Formula: see text] can be tuned, for example, by chemical composition. However, the most desired mode to tune the laser, by an electric field, has so far been elusive. Here we present the realization of an electrically tunable laser with [Formula: see text] spanning an extraordinarily broad range (>100 nm) of the visible spectrum. The effect is achieved by using an electric-field-induced oblique helicoidal (OH) state in which the molecules form an acute angle with the helicoidal axis rather than align perpendicularly to it as in a field-free CLC. The principal advantage of the electrically controlled CLC OH laser is that the electric field is applied parallel to the helical axis and thus changes the pitch but preserves the single-harmonic structure. The preserved single-harmonic structure ensures efficiency of lasing in the entire tunable range of emission. The broad tuning range of CLC OH lasers, coupled with their microscopic size and narrow line widths, may enable new applications in areas such as diagnostics, sensing, microscopy, displays, and holography.

Electronic and magnetic properties in Sr{sub 1-x}La{sub x}RuO{sub 3}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gupta, Renu; Pramanik, A. K., E-mail: akpramanik@mail.jnu.ac.in

2016-05-23

Here we report the structural, magnetic and transport properties in La doped SrRuO{sub 3}. The doping of La{sup 3+} modifies the ionic state of Ru by converting Ru{sup 4+} to Ru{sup +3}. However, there is modification in lattice parameters as La{sup 3+} has smaller ionic radii than that of Sr{sup 2+}. We find La doping weakens the ferromagnetic state in SrRuO{sub 3} in terms of lowering T{sub c} and decreasing the magnetic moment. The electrical resistivity shows metallic behavior in whole temperature range, however, resistivity increases with doping of La.

Lanthanide-doped upconverting phosphors for bioassay and therapy

NASA Astrophysics Data System (ADS)

Guo, Huichen; Sun, Shiqi

2012-10-01

Lanthanide-doped fluorescent materials have gained increasing attention in recent years due to their unique luminescence properties which have led to their use in wide-ranging fields including those of biological applications. Aside from being used as agents for in vivo imaging, lanthanide-doped fluorescent materials also present many advantages for use in bioassays and therapy. In this review, we summarize the applications of lanthanide-doped up-converting phosphors (UCPs) in protein and gene detection, as well as in photodynamic and gene therapy in recent years, and outline their future potential in biological applications. The current report could serve as a reference for researchers in relevant fields.

Effects on the magnetic and optical properties of Co-doped ZnO at different electronic states

NASA Astrophysics Data System (ADS)

Huo, Qingyu; Xu, Zhenchao; Qu, Linfeng

2017-12-01

Both blue and red shifts in the absorption spectrum of Co-doped ZnO have been reported at a similar concentration range of doped Co. Moreover, the sources of magnetism of Co-doped ZnO are controversial. To solve these problems, the geometry optimization and energy of different Co-doped ZnO systems were calculated at the states of electron spin polarization and nonspin polarization by adopting plane-wave ultra-soft pseudopotential technology based on density function theory. At the state of electron nonspin polarization, the total energies increased as the concentration of Co-doped increased. The doped systems also became unstable. The formation energies increased and doping became difficult. Furthermore, the band gaps widened and the absorption spectrum exhibited a blue shift. The band gaps were corrected by local-density approximation + U at the state of electron spin polarization. The magnetic moments of the doped systems weakened as the concentration of doped Co increased. The magnetic moments were derived from the coupling effects of sp-d. The band gaps narrowed and the absorption spectrum exhibited a red shift. The inconsistencies of the band gaps and absorption spectrum at the states of electron spin polarization and nonspin polarization were first discovered in this research, and the sources of Co-doped ZnO magnetism were also reinterpreted.

Microstructural and optical properties of Co doped NiO nanoparticles synthesized by auto combustion using NaOH as fuel

NASA Astrophysics Data System (ADS)

Parveen, Azra; Agrawal, Shraddha; Azam, Ameer

2018-05-01

The nanoparticles of 5% Co doped NiO were synthesized by auto-combustion method in aqueous medium using NaOH as a fuel. The obtained particles were characterized using X-ray diffraction studies XRD. The results of structural characterization shows the formation of Co doped Nickel oxide nanoparticles in single phase without any impurity. The optical absorption spectra of Co doped NiO sample recorded by UV-VIS spectrophotometer in the range of 200 to 800 nm have been presented. The variation of dielectric constant and dielectric loss has been studied as function of frequency. Co doping affects the optical properties and band gap. NiO can potentially be used in optical, electronic, catalytic materials, antimicrobial agent and super-paramagnetic devices.

Experimental investigations on potassium permanganate doped polyvinyl alcohol - polyvinyl pyrrolidone blend

NASA Astrophysics Data System (ADS)

Veena, G.; Lobo, Blaise

2018-04-01

Potassium permanganate (KMnO4) doped polyvinyl alcohol (PVA) - polyvinyl pyrrolidone (PVP) blend films were prepared by solution casting technique, in the doping range varying from 0.01 wt % up to 4.70 wt %. The microstructural changes caused by doping, and the modified properties of these films were studied using Atomic Force Microscope (AFM) and temperature dependent direct current (DC) electrical measurements. Temperature variation of electrical resistivity was found to obey Arrhenius relation, from which activation energy was determined. The study was supported by AFM scans, which showed an increase in surface roughness and the presence of spike-like structures, due to interaction of dopant with the polymeric blend. Differential Scanning Calorimetry (DSC) scans revealed two stages of degradation in KMnO4 doped PVA - PVP blend films.

Widely tunable Tm-doped mode-locked all-fiber laser

PubMed Central

Yan, Zhiyu; Sun, Biao; Li, Xiaohui; Luo, Jiaqi; Shum, Perry Ping; Yu, Xia; Zhang, Ying; Wang, Qi Jie

2016-01-01

We demonstrated a widely tunable Tm-doped mode-locked all-fiber laser, with the widest tunable range of 136 nm, from 1842 to 1978 nm. Nonlinear polarization evolution (NPE) technique is employed to enable mode-locking and the wavelength-tunable operation. The widely tunable range attributes to the NPE-induced transmission modulation and bidirectional pumping mechanism. Such kind of tunable mode-locked laser can find various applications in optical communications, spectroscopy, time-resolved measurement, and among others. PMID:27263655

Tunability range of 245 nm in a diode-pumped Tm:BaY2F8 laser at 1.9 μm: a theoretical and experimental investigation

NASA Astrophysics Data System (ADS)

Coluccelli, N.; Gatti, D.; Galzerano, G.; Cornacchia, F.; Parisi, D.; Toncelli, A.; Tonelli, M.; Laporta, P.

2006-12-01

Extremely wide wavelength tuning ranges of up to ˜300 nm around 1.9 μm are theoretically predicted in a Tm-doped BaY2F8 crystal, on the basis of near-infrared measurements of emission and absorption cross sections. A tunability interval of 245 nm, from 1849 nm to 2059 nm, has been demonstrated by room-temperature laser experiments using a 8% Tm-doped crystal.

Ferromagnetism in doped or undoped spintronics nanomaterials

NASA Astrophysics Data System (ADS)

Qiang, You

2010-10-01

Much interest has been sparked by the discovery of ferromagnetism in a range of oxide doped and undoped semiconductors. The development of ferromagnetic oxide semiconductor materials with giant magnetoresistance (GMR) offers many advantages in spintronics devices for future miniaturization of computers. Among them, TM-doped ZnO is an extensively studied n-type wide-band-gap (3.36 eV) semiconductor with a tremendous interest as future mini-computer, blue light emitting, and solar cells. In this talk, Co-doped ZnO and Co-doped Cu2O semiconductor nanoclusters are successfully synthesized by a third generation sputtering-gas-aggregation cluster technique. The Co-doped nanoclusters are ferromagnetic with Curie temperature above room temperature. Both of Co-doped nanoclusters show positive magnetoresistance (PMR) at low temperature, but the amplitude of the PMRs shows an anomalous difference. For similar Co doping concentration at 5 K, PMR is greater than 800% for Co-doped ZnO but only 5% for Co-doped Cu2O nanoclusters. Giant PMR in Co-doped ZnO which is attributed to large Zeeman splitting effect has a linear dependence on applied magnetic field with very high sensitivity, which makes it convenient for the future spintronics applications. The small PMR in Co-doped Cu2O is related to its vanishing density of states at Fermi level. Undoped Zn/ZnO core-shell nanoparticle gives high ferromagnetic properties above room temperature due to the defect induced magnetization at the interface.

Comparison on different repetition rate locking methods in Er-doped fiber laser

NASA Astrophysics Data System (ADS)

Yang, Kangwen; Zhao, Peng; Luo, Jiang; Huang, Kun; Hao, Qiang; Zeng, Heping

2018-05-01

We demonstrate a systematic comparative research on the all-optical, mechanical and opto-mechanical repetition rate control methods in an Er-doped fiber laser. A piece of Yb-doped fiber, a piezoelectric transducer and an electronic polarization controller are simultaneously added in the laser cavity as different cavity length modulators. By measuring the cavity length tuning ranges, the output power fluctuations, the temporal and frequency repetition rate stability, we show that all-optical method introduces the minimal disturbances under current experimental condition.

High-power thulium-doped fibre laser with intracavity dispersion management

NASA Astrophysics Data System (ADS)

Krylov, Aleksandr A.; Chernyshova, M. A.; Chernykh, D. S.; Senatorov, A. K.; Tupitsyn, I. M.; Kryukov, P. G.; Dianov, Evgenii M.

2012-05-01

This paper reports a scheme for the generation and amplification of pico- and femtosecond pulses in the range 1.93-1.97 μm using thulium-doped silica fibres. Group velocity dispersion (GVD) management in the cavity of the thulium-doped fibre laser oscillator is ensured by a single-mode germanosilicate fibre (75 mol % GeO2 in the core) with a positive GVD. Pulses are obtained down to 200 fs in duration and up to 56 nJ in energy.

Photonic bandgap single-mode optical fibre with ytterbium-doped silica glass core

DOE Office of Scientific and Technical Information (OSTI.GOV)

Egorova, O N; Semenov, S L; Vel'miskin, V V

2011-01-24

A photonic bandgap fibre with an ytterbium-doped silica glass core is fabricated and investigated. The possibility of implementing single-mode operation of such fibres in a wide spectral range at a large (above 20 {mu}m) mode field diameter makes them promising for fibre lasers and amplifiers. To ensure a high quality of the beam emerging from the fibre, particular attention is paid to increasing the optical homogeneity of the ytterbium-doped core glass. (optical fibres)

Thermal property of holmium doped lithium lead borate glasses

NASA Astrophysics Data System (ADS)

Usharani, V. L.; Eraiah, B.

2018-04-01

The new glass system of holmium doped lithium lead borate glasses were prepared by conventional melt quenching technique. The thermal stability of the different compositions of Ho3+ ions doped lithium lead borate glasses were studied by using TG-DTA. The Tg values are ranging from 439 to 444 °C with respect to the holmium concentration. Physical parameters like polaron radius(rp), inter-nuclear distance (ri), field strength (F) and polarizability (αm) of oxide ions were calculated using appropriate formulae.

Preparation of nitrogen-doped graphene/activated carbon composite papers to enhance energy storage in supercapacitors

NASA Astrophysics Data System (ADS)

Li, Yong-feng; Liu, Yan-zhen; Liang, Yu; Guo, Xiao-hui; Chen, Cheng-meng

2017-09-01

This report presents a facile and effective method to synthesize freestanding nitrogen-doped reduced graphene oxide (rGO)/activated carbon (AC) composite papers for supercapacitors by a method combining vacuum filtration with post-annealing in NH3 atmosphere. The effect of activated carbon contents on the microstructure and capacitive behavior of the resulting composite papers before and after the annealing was investigated by X-ray diffraction, scanning electron microscopy, and Raman and X-ray photoelectron spectroscopy. Results show that the composite paper with a 30% activated carbon loading has a high nitrogen content of 14.6 at% and superior capacitive performance (308 F/g, 1 A/g) to the other composite papers with various activated carbon loadings. Nitrogen was doped and GO reduced during the annealing. The rGO nanosheets acted as a framework, and the AC particles served as spacers to avoid agglomeration of graphene sheets. The high capacitance of the composite paper is ascribed to the electric double-layer behavior and the reversible redox reactions of the nitrogen and oxygen groups. The entire process is simple, environmental friendly and easily scalable for mass production.

Detonation nanodiamonds for doping Kevlar.

PubMed

Comet, Marc; Pichot, Vincent; Siegert, Benny; Britz, Fabienne; Spitzer, Denis

2010-07-01

This paper reports on the first attempt to enclose diamond nanoparticles--produced by detonation--into a Kevlar matrix. A nanocomposite material (40 wt% diamond) was prepared by precipitation from an acidic solution of Kevlar containing dispersed nanodiamonds. In this material, the diamond nanoparticles (Ø = 4 nm) are entirely wrapped in a Kevlar layer about 1 nm thick. In order to understand the interactions between the nanodiamond surface and the polymer, the oxygenated surface functional groups of nanodiamond were identified and titrated by Boehm's method which revealed the exclusive presence of carboxyl groups (0.85 sites per nm2). The hydrogen interactions between these groups and the amide groups of Kevlar destroy the "rod-like" structure and the classical three-dimensional organization of this polymer. The distortion of Kevlar macromolecules allows the wrapping of nanodiamonds and leads to submicrometric assemblies, giving a cauliflower structure reminding a fractal object. Due to this structure, the macroscopic hardness of Kevlar doped by nanodiamonds (1.03 GPa) is smaller than the one of pure Kevlar (2.31 GPa). To our knowledge, this result is the first illustration of the change of the mechanical properties induced by doping the Kevlar with nanoparticles.

High p-type doping, mobility, and photocarrier lifetime in arsenic-doped CdTe single crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nagaoka, Akira; Kuciauskas, Darius; McCoy, Jedidiah

Here, Group-V element doping is promising for simultaneously maximizing the hole concentration and minority carrier lifetime in CdTe for thin film solar cells, but there are roadblocks concerning point defects including the possibility of self-compensation by AX metastability. Herein, we report on doping, lifetime, and mobility of CdTe single crystals doped with As between 10 16 and 10 20 cm –3 grown from the Cd solvent by the travelling heater method. Evidence consistent with AX instability as a major contributor to compensation in samples doped below 10 17 cm –3 is presented, while for higher-doped samples, precipitation of a secondmore » phase on planar structural defects is also observed and may explain spatial variation in properties such as lifetime. Rapid cooling after crystal growth increases doping efficiency and mobility for times up to 20–30 days at room temperature with the highest efficiencies observed close to 45% and a hole mobility of 70 cm 2/Vs at room temperature. A doping limit in the low 10 17/cm 3 range is observed for samples quenched at 200–300 °C/h. Bulk minority carrier lifetimes exceeding 20 ns are observed for samples doped near 10 16 cm –3 relaxed in the dark and for unintentionally doped samples, while a lifetime of nearly 5 ns is observed for 10 18 cm –3 As doping. These results help us to establish limits on properties expected for group-V doped CdTe polycrystalline thin films for use in photovoltaics.« less

High p-type doping, mobility, and photocarrier lifetime in arsenic-doped CdTe single crystals

DOE PAGES

Nagaoka, Akira; Kuciauskas, Darius; McCoy, Jedidiah; ...

2018-05-07

Here, Group-V element doping is promising for simultaneously maximizing the hole concentration and minority carrier lifetime in CdTe for thin film solar cells, but there are roadblocks concerning point defects including the possibility of self-compensation by AX metastability. Herein, we report on doping, lifetime, and mobility of CdTe single crystals doped with As between 10 16 and 10 20 cm –3 grown from the Cd solvent by the travelling heater method. Evidence consistent with AX instability as a major contributor to compensation in samples doped below 10 17 cm –3 is presented, while for higher-doped samples, precipitation of a secondmore » phase on planar structural defects is also observed and may explain spatial variation in properties such as lifetime. Rapid cooling after crystal growth increases doping efficiency and mobility for times up to 20–30 days at room temperature with the highest efficiencies observed close to 45% and a hole mobility of 70 cm 2/Vs at room temperature. A doping limit in the low 10 17/cm 3 range is observed for samples quenched at 200–300 °C/h. Bulk minority carrier lifetimes exceeding 20 ns are observed for samples doped near 10 16 cm –3 relaxed in the dark and for unintentionally doped samples, while a lifetime of nearly 5 ns is observed for 10 18 cm –3 As doping. These results help us to establish limits on properties expected for group-V doped CdTe polycrystalline thin films for use in photovoltaics.« less

Photoluminescence Studies of P-type Modulation Doped GaAs/AlGaAs Quantum Wells in the High Doping Regime

NASA Astrophysics Data System (ADS)

Wongmanerod, S.; Holtz, P. O.; Reginski, K.; Bugaiski, M.; Monemar, B.

The influence of high Be-acceptor doping on the modulation-doped GaAs/Al0.3Ga0.7As quantum wells structures has been optically studied by using the low-temperature photoluminescence (PL) and photoluminescence excitation (PLE) techniques.The modulation doped samples were grown by the molecular-beam epitaxy technique with a varying Be acceptor concentration ranging from 1×1018 to 8×1018cm-3. Several novels physical effects were observed. The main effect is a significant shift of the main emission towards lower energies as the doping concentrations increase. There are two contradictory mechanisms, which determine the peak energy of the main emission; the shrinkage of the effective bandgap due to many body effects and the reduction of the exciton binding energy due to the carrier screening effect. We conclude that the first one is the dominating effect. At a sufficiently high doping concentration (roughly 2×1018cm-3), the lineshape of the main PL emission is modified, and a new feature, the so called Fermi-edge singularity (FES), appears on the high energy side of the PL emission and exhibits a blue-shift as a function of doping concentration. This feature has been found to be very sensitive to a temperature change, already in the range of 4.4-50K. In addition, PLE spectra with a suitable detection energy show that the absorption edge is blue-shifted with respect to the PL main emission. The resulting Stoke shift is due to phase-space-filling of the carriers, in agreement with the FES interpretation. Finally, we have found from the PLE spectra that the exciton quenching is initiated in the same doping regime. Compared to the exciton quenching in other p-type structures, the critical acceptor concentration required to quench the excitons is significantly lower than in the case of 2D structures with acceptor doping within the well, but larger than in the case of 3D bulk.

Effect of doping on the forward current-transport mechanisms in a metal-insulator-semiconductor contact to INP:ZN grown by metal organic vapor phase epitaxy

NASA Astrophysics Data System (ADS)

Cova, P.; Singh, A.; Medina, A.; Masut, R. A.

1998-04-01

A detailed study of the effect of doping density on current transport was undertaken in Au metal-insulator-semiconductor (MIS) contacts fabricated on Zn-doped InP layers grown by metal organic vapor phase epitaxy. A recently developed method was used for the simultaneous analysis of the current-voltage ( I- V) and capacitance-voltage ( C- V) characteristics in an epitaxial MIS diode which brings out the contributions of different current-transport mechanisms to the total current. I- V and high-frequency C- V measurements were performed on two MIS diodes at different temperatures in the range 220-395 K. The barrier height at zero bias of Au/InP:Zn MIS diodes, φ0 (1.06 V±10%), was independent both of the Zn-doping density and of the surface preparation. The interface state density distribution Nss as well as the thickness of the oxide layer (2.2±15% nm) unintentionally grown before Au deposition were independent of the Zn-doping concentration in the range 10 16< NA<10 17 cm -3; not so the effective potential barrier χ of the insulator layer and the density of the mid-gap traps. χ was much lower for the highly-doped sample. Our results indicate that at high temperatures, independent of the Zn-doping concentration, the interfacial layer-thermionic (ITE) and interfacial layer-diffusion (ID) mechanisms compete with each other to control the current transport. At intermediate temperatures, however, ITE and ID will no longer be the only dominant mechanisms in the MIS diode fabricated on the highly-doped sample. In this case, the assumption of a generation-recombination current permits a better fit to the experimental data. Analysis of the data suggests that the generation-recombination current, observed only in the highly-doped sample, is associated with an increase in the Zn-doping density. From the forward I- V data for this diode we obtained the energy level (0.60 eV from the conduction band) for the most effective recombination centers.

Compensation for effects of ambient temperature on rare-earth doped fiber optic thermometer

NASA Technical Reports Server (NTRS)

Adamovsky, G.; Sotomayor, J. L.; Krasowski, M. J.; Eustace, J. G.

1989-01-01

Variations in ambient temperature have a negative effect on the performance of any fiber optic sensing system. A change in ambient temperature may alter the design parameters of fiber optic cables, connectors, sources, detectors, and other fiber optic components and eventually the performance of the entire system. The thermal stability of components is especially important in a system which employs intensity modulated sensors. Several referencing schemes have been developed to account for the variable losses that occur within the system. However, none of these conventional compensating techniques can be used to stabilize the thermal drift of the light source in a system based on the spectral properties of the sensor material. The compensation for changes in ambient temperature becomes especially important in fiber optic thermometers doped with rare earths. Different approaches to solving this problem are searched and analyzed.

Compensation for effects of ambient temperature on rare-earth doped fiber optic thermometer

NASA Technical Reports Server (NTRS)

Adamovsky, G.; Sotomayor, J. L.; Krasowski, M. J.; Eustace, J. G.

1990-01-01

Variations in ambient temperature have a negative effect on the performance of any fiber optic sensing system. A change in ambient temperature may alter the design parameters of fiber optic cables, connectors, sources, detectors, and other fiber optic components and eventually the performance of the entire system. The thermal stability of components is especially important in a system which employs intensity modulated sensors. Several referencing schemes have been developed to account for the variable losses that occur within the system. However, none of these conventional compensating techniques can be used to stabilize the thermal drift of the light source in a system based on the spectral properties of the sensor material. The compensation for changes in ambient temperature becomes especially important in fiber optic thermometers doped with rare earths. Different approaches to solving this problem are searched and analyzed.

A generic interface to reduce the efficiency-stability-cost gap of perovskite solar cells

NASA Astrophysics Data System (ADS)

Hou, Yi; Du, Xiaoyan; Scheiner, Simon; McMeekin, David P.; Wang, Zhiping; Li, Ning; Killian, Manuela S.; Chen, Haiwei; Richter, Moses; Levchuk, Ievgen; Schrenker, Nadine; Spiecker, Erdmann; Stubhan, Tobias; Luechinger, Norman A.; Hirsch, Andreas; Schmuki, Patrik; Steinrück, Hans-Peter; Fink, Rainer H.; Halik, Marcus; Snaith, Henry J.; Brabec, Christoph J.

2017-12-01

A major bottleneck delaying the further commercialization of thin-film solar cells based on hybrid organohalide lead perovskites is interface loss in state-of-the-art devices. We present a generic interface architecture that combines solution-processed, reliable, and cost-efficient hole-transporting materials without compromising efficiency, stability, or scalability of perovskite solar cells. Tantalum-doped tungsten oxide (Ta-WOx)/conjugated polymer multilayers offer a surprisingly small interface barrier and form quasi-ohmic contacts universally with various scalable conjugated polymers. In a simple device with regular planar architecture and a self-assembled monolayer, Ta-WOx-doped interface-based perovskite solar cells achieve maximum efficiencies of 21.2% and offer more than 1000 hours of light stability. By eliminating additional ionic dopants, these findings open up the entire class of organics as scalable hole-transporting materials for perovskite solar cells.

Thermally Oxidized C, N Co-Doped ANATASE-TiO2 Coatings on Stainless Steel for Tribological Properties

NASA Astrophysics Data System (ADS)

Wang, Hefeng; Shu, Xuefeng; Li, Xiuyan; Tang, Bin; Lin, Naiming

2013-07-01

Ti(C, N) coatings were prepared on stainless steel (SS) substrates by plasma surface alloying technique. Carbon-nitrogen co-doped titanium dioxide (C-N-TiO2) coatings were fabricated by oxidative of the Ti(C, N) coatings in air. The prepared C-N-TiO2 coatings were characterized by SEM, XPS and XRD. Results reveal that the SS substrates were entirely shielded by the C-N-TiO2 coatings. The C-N-TiO2 coatings are anatase in structure as characterized by X-ray diffraction. The tribological behavior of the coatings was tested with ball-on-disc sliding wear and compared with substrate. Such a C-N-TiO2 coatings showed good adhesion with the substrate and tribological properties of the SS in terms of much reduced friction coefficient and increased wear resistance.

Doping properties of cadmium-rich arsenic-doped CdTe single crystals: Evidence of metastable AX behavior

NASA Astrophysics Data System (ADS)

Nagaoka, Akira; Kuciauskas, Darius; Scarpulla, Michael A.

2017-12-01

Cd-rich composition and group-V element doping are of interest for simultaneously maximizing the hole concentration and minority carrier lifetime in CdTe, but the critical details concerning point defects are not yet fully established. Herein, we report on the properties of arsenic doped CdTe single crystals grown from Cd solvent by the travelling heater method. The photoluminescence spectra and activation energy of 74 ± 2 meV derived from the temperature-dependent Hall effect are consistent with AsTe as the dominant acceptor. Doping in the 1016 to 1017/cm3 range is achieved for measured As concentrations between 1016 and 1020/cm3 with the highest doping efficiency of 40% occurring near 1017 As/cm3. We observe persistent photoconductivity, a hallmark of light-induced metastable configuration changes consistent with AX behavior. Additionally, quenching experiments reveal at least two mechanisms of increased p-type doping in the dark, one decaying over 2-3 weeks and the other persisting for at least 2 months. These results provide essential insights for the application of As-doped CdTe in thin film solar cells.

Structural, Optical, and Electrical Properties of Cobalt-Doped CdS Quantum Dots

NASA Astrophysics Data System (ADS)

Thambidurai, M.; Muthukumarasamy, N.; Velauthapillai, Dhayalan; Agilan, S.; Balasundaraprabhu, R.

2012-04-01

In the present work, a systematic study has been carried out to understand the influence of cobalt (Co) doping on various properties of CdS nanoparticles. CdS and Co-doped CdS quantum dots have been prepared at room temperature using a chemical precipitation method without using catalysts, capping agents, or surfactants. X-ray diffraction reveals that both undoped and Co-doped CdS nanoparticles exhibit hexagonal structure without any impurity phase, and the lattice constants of CdS nanoparticles are observed to decrease slightly with increasing cobalt concentration. High-resolution transmission electron microscopy (HRTEM) shows that the particle size of CdS and 5.02% Co-doped CdS nanoparticles is in the range of 2 nm to 4 nm. The Raman spectra of Co-doped CdS nanoparticles exhibit a red-shift compared with that of bulk CdS, which may be attributed to optical phonon confinement. The optical absorption spectra of Co-doped CdS nanoparticles also exhibit a red-shift with respect to that of CdS nanoparticles. The electrical conductivity of CdS and Co-doped CdS nanoparticles is found to increase with increasing temperature and cobalt concentration.

Chemical and Morphological Control of Interfacial Self-Doping for Efficient Organic Electronics.

PubMed

Liu, Yao; Cole, Marcus D; Jiang, Yufeng; Kim, Paul Y; Nordlund, Dennis; Emrick, Todd; Russell, Thomas P

2018-04-01

Solution-based processing of materials for electrical doping of organic semiconductor interfaces is attractive for boosting the efficiency of organic electronic devices with multilayer structures. To simplify this process, self-doping perylene diimide (PDI)-based ionene polymers are synthesized, in which the semiconductor PDI components are embedded together with electrolyte dopants in the polymer backbone. Functionality contained within the PDI monomers suppresses their aggregation, affording self-doping interlayers with controllable thickness when processed from solution into organic photovoltaic devices (OPVs). Optimal results for interfacial self-doping lead to increased power conversion efficiencies (PCEs) of the fullerene-based OPVs, from 2.62% to 10.64%, and of the nonfullerene-based OPVs, from 3.34% to 10.59%. These PDI-ionene interlayers enable chemical and morphological control of interfacial doping and conductivity, demonstrating that the conductive channels are crucial for charge transport in doped organic semiconductor films. Using these novel interlayers with efficient doping and high conductivity, both fullerene- and nonfullerene-based OPVs are achieved with PCEs exceeding 9% over interlayer thicknesses ranging from ≈3 to 40 nm. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Questions of fairness and anti-doping in US cycling: The contrasting experiences of professionals and amateurs

PubMed Central

Henning, April D.; Dimeo, Paul

2015-01-01

Abstract The focus of researchers, media and policy on doping in cycling is often limited to the professional level of the sport. However, anti-doping test results since 2001 demonstrate that banned substances are also used by US cyclists at lower levels of the sport, necessitating a broader view of the patterns and motivations of substance use within the sport. In this article, we describe and explain the doping culture that has emerged in domestic US cycling among amateur and semi-professionals. Through analysis of records from sports governing bodies and journalistic reports, we assess the range of violation types and discuss the detection and punishing of riders who were not proven to have intended to cheat but became “collateral damage” in the war on doping. We argue that the phenomenon of doping is more complex than what has been shown to occur in elite sport, as it includes a wider variety of behaviours, situations and motivations. We develop fresh insights by examining cases where doping has been accidental, intrinsically motivated, non-performance enhancing or the result of prescribed medical treatments banned by anti-doping authorities. Such trends call into question the fairness of anti-doping measures, and we discuss the possibility of developing localised solutions to testing and sanctioning amateur athletes. PMID:26692658

Effect of BiFeO3 doping on the structural, dielectric and electrical properties of CaCu3Ti4O12 ceramics

NASA Astrophysics Data System (ADS)

Dai, Haiyang; Liu, Dewei; Chen, Jing; Xue, Renzhong; Li, Tao; Xiang, Huiwen; Chen, Zhenping; Liu, Haizeng

2015-04-01

(1 - x)CaCu3Ti4O12- xBiFeO3 ( x = 0, 0.003, 0.006, 0.010 and 0.015) ceramics have been fabricated by the solid-state reaction method. The effects of BiFeO3 (BFO) doping on the microstructure, dielectric and electrical properties of CaCu3Ti4O12 (CCTO) ceramics were investigated. It is found that BFO doping can affect the microstructure of the CCTO ceramics, and some properties of CCTO ceramics can hence be improved by BFO doping. The XRD and Raman results show that no phase transition has occurred in the doping content range, but BFO doping induces the crystal structure distortion. Analysis of microstructure indicates that the grain morphology varies significantly with increasing BFO content, and an appropriate amount of BFO can promote the grain growth. Impedance spectroscopy results show that the dielectric constant and loss of the BFO-doped CCTO samples are stable with frequency. The dielectric constant and nonohmic properties can be enhanced markedly in an appropriate doping content. The dielectric loss of all BFO-doped samples was lower than that of undoped CCTO sample in low frequencies. The related mechanism is also discussed in the paper.

Exciton-to-Dopant Energy Transfer in Mn-Doped Cesium Lead Halide Perovskite Nanocrystals.

PubMed

Parobek, David; Roman, Benjamin J; Dong, Yitong; Jin, Ho; Lee, Elbert; Sheldon, Matthew; Son, Dong Hee

2016-12-14

We report the one-pot synthesis of colloidal Mn-doped cesium lead halide (CsPbX 3 ) perovskite nanocrystals and efficient intraparticle energy transfer between the exciton and dopant ions resulting in intense sensitized Mn luminescence. Mn-doped CsPbCl 3 and CsPb(Cl/Br) 3 nanocrystals maintained the same lattice structure and crystallinity as their undoped counterparts with nearly identical lattice parameters at ∼0.2% doping concentrations and no signature of phase separation. The strong sensitized luminescence from d-d transition of Mn 2+ ions upon band-edge excitation of the CsPbX 3 host is indicative of sufficiently strong exchange coupling between the charge carriers of the host and dopant d electrons mediating the energy transfer, essential for obtaining unique properties of magnetically doped quantum dots. Highly homogeneous spectral characteristics of Mn luminescence from an ensemble of Mn-doped CsPbX 3 nanocrystals and well-defined electron paramagnetic resonance spectra of Mn 2+ in host CsPbX 3 nanocrystal lattices suggest relatively uniform doping sites, likely from substitutional doping at Pb 2+ . These observations indicate that CsPbX 3 nanocrystals, possessing many superior optical and electronic characteristics, can be utilized as a new platform for magnetically doped quantum dots expanding the range of optical, electronic, and magnetic functionality.

A broadening temperature sensitivity range with a core-shell YbEr@YbNd double ratiometric optical nanothermometer

NASA Astrophysics Data System (ADS)

Marciniak, L.; Prorok, K.; Francés-Soriano, L.; Pérez-Prieto, J.; Bednarkiewicz, A.

2016-02-01

The chemical architecture of lanthanide doped core-shell up-converting nanoparticles can be engineered to purposely design the properties of luminescent nanomaterials, which are typically inaccessible to their homogeneous counterparts. Such an approach allowed to shift the up-conversion excitation wavelength from ~980 to the more relevant ~808 nm or enable Tb or Eu up-conversion emission, which was previously impossible to obtain or inefficient. Here, we address the issue of limited temperature sensitivity range of optical lanthanide based nano-thermometers. By covering Yb-Er co-doped core nanoparticles with the Yb-Nd co-doped shell, we have intentionally combined temperature dependent Er up-conversion together with temperature dependent Nd --> Yb energy transfer, and thus have expanded the temperature response range ΔT of a single nanoparticle based optical nano-thermometer under single ~808 nm wavelength photo-excitation from around ΔT = 150 K to over ΔT = 300 K (150-450 K). Such engineered nanocrystals are suitable for remote optical temperature measurements in technology and biotechnology at the sub-micron scale.The chemical architecture of lanthanide doped core-shell up-converting nanoparticles can be engineered to purposely design the properties of luminescent nanomaterials, which are typically inaccessible to their homogeneous counterparts. Such an approach allowed to shift the up-conversion excitation wavelength from ~980 to the more relevant ~808 nm or enable Tb or Eu up-conversion emission, which was previously impossible to obtain or inefficient. Here, we address the issue of limited temperature sensitivity range of optical lanthanide based nano-thermometers. By covering Yb-Er co-doped core nanoparticles with the Yb-Nd co-doped shell, we have intentionally combined temperature dependent Er up-conversion together with temperature dependent Nd --> Yb energy transfer, and thus have expanded the temperature response range ΔT of a single nanoparticle based optical nano-thermometer under single ~808 nm wavelength photo-excitation from around ΔT = 150 K to over ΔT = 300 K (150-450 K). Such engineered nanocrystals are suitable for remote optical temperature measurements in technology and biotechnology at the sub-micron scale. Electronic supplementary information (ESI) available: Characterization, structural and morphological characterization of nanocrystals, the measurement setup. See DOI: 10.1039/c5nr08223d

Doping Li and K into Na2ZrO3 Sorbent to Improve Its CO2 Capture Capability

NASA Astrophysics Data System (ADS)

Duan, Yuhua

Carbon dioxide is one of the major combustion products which once released into the air can contribute to global climate change. Solid sorbents have been reported in several previous studies to be promising candidates for CO2 sorbent applications due to their high CO2 absorption capacities at moderate working temperatures. However, at a given CO2 pressure, the turnover temperature (Tt) of an individual solid capture CO2 reaction is fixed and may be outside the operating temperature range (ΔTo) for a particularly capture technology. In order to shift such Tt for a solid into the range of ΔTo, its corresponding thermodynamic property must be changed by changing its structure by reacting (mixing) with other materials or doping with other elements. As an example, by combining thermodynamic database searching with ab initio thermodynamics calculations, in this work, we explored the Li- and K-doping effects on the Tt shifts of Na2ZrO3 at different doping levels. The obtained results showed that compared to pure Na2ZrO3, the Li- and K-doped mixtures Na2-αMαZrO3 (M =Li, K) have lower Tt and higher CO2 capture capacities.

P-type hole mobility measurement in Na-doped BaSnO3

NASA Astrophysics Data System (ADS)

Hong, Sungyun; Jang, Yeaju; Park, Jisung; Char, Kookrin

P-type doping in oxide materials has been a difficult task because of the oxygen vacancies. Taking advantage of the excellent oxygen stability in BaSnO3 (BSO), we replaced Ba with Na in BSO to achieve p-type doping. Ba1-xNaxSnO3 (BNSO) films with varying dopant ratios were epitaxially grown by the pulsed laser deposition technique. We confirmed that the BNSO films were properly grown and determined their lattice constants with respect to the dopant ratio by x-ray diffraction. Due to the high resistance of the films at room temperature, we measured the transport properties of the BNSO films at temperatures ranging from 200 C to 400 C. Hall resistance measurements in a +/- 5 kG magnetic field were performed to confirm that the films are indeed p-type. As the temperature increased, the hole carrier concentration of the films increased while the film resistance decreased. The hole mobility values, in the tens of cm2/Vsec range, were found to decrease with the temperature. We will present the complete doping rate and temperature dependence of the hole mobility and compare their behavior with those of n-type La-doped BSO. Samsung science and technology foundation.

Low-frequency dielectric properties of intrinsic and Al-doped rutile TiO{sub 2} thin films grown by the atomic layer deposition technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kassmi, M.; LMOP, El Manar University, Tunis 2092; Pointet, J.

2016-06-28

Dielectric spectroscopy is carried out for intrinsic and aluminum-doped TiO{sub 2} rutile films which are deposited on RuO{sub 2} by the atomic layer deposition technique. Capacitance and conductance are measured in the 0.1 Hz–100 kHz range, for ac electric fields up to 1 MV{sub rms}/cm. Intrinsic films have a much lower dielectric constant than rutile crystals. This is ascribed to the presence of oxygen vacancies which depress polarizability. When Al is substituted for Ti, the dielectric constant further decreases. By considering Al-induced modification of polarizability, a theoretical relationship between the dielectric constant and the Al concentration is proposed. Al doping drastically decreasesmore » the loss in the very low frequency part of the spectrum. However, Al doping has almost no effect on the loss at high frequencies. The effect of Al doping on loss is discussed through models of hopping transport implying intrinsic oxygen vacancies and Al related centers. When increasing the ac electric field in the MV{sub rms}/cm range, strong voltage non-linearities are evidenced in undoped films. The conductance increases exponentially with the ac field and the capacitance displays negative values (inductive behavior). Hopping barrier lowering is proposed to explain high-field effects. Finally, it is shown that Al doping strongly improves the high-field dielectric behavior.« less

Knowledge, attitudes and beliefs of technical staff towards doping in Spanish football.

PubMed

Morente-Sánchez, Jaime; Zabala, Mikel

2015-01-01

The aim of this study was to understand the attitudes, beliefs and knowledge among technical staff members of Spanish football teams regarding doping. The sample was drawn from 88 football teams that ranged from elite to under-18 categories. The 237 stakeholders (34.45 ± 8.59 years) were categorised as follows: coaches (COA) (n = 101), physical trainers (PT) (n = 68) and rest of technical staff (RTS) (n = 68). The descriptive exploratory design used an instrument that combined a validated questionnaire (Performance Enhancement Attitude Scale; PEAS) with specific, qualitative open-ended questions. The overall mean score from the PEAS (range, 17-102, with higher scores representing more permissive attitudes towards doping) was 31.64 ± 10.77; for COA, 31.91 ± 11.42; for PT, 31.28 ± 9.44; and for RTS, 31.58 ± 11.18. Regarding participants' knowledge and beliefs, most respondents (57.6%) did not know the meaning of WADA (World Anti-Doping Agency); 84.9% did not know the prohibited list; and 39.2% had used/recommended supplements. In addition, 87.2% recognised "differential treatment of doping among sports," with cycling considered most affected (62.6%) and team sports least (27.2%, with football at 15%). The dangerous lack of knowledge highlights the necessity for anti-doping education and prevention programs for all football stakeholders, not just athletes.

Pulse-Shape Analysis of Neutron-Induced Scintillation Light in Ni-doped 6LiF/ZnS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cowles, Christian C.; Behling, Richard S.; Imel, G. R.

Abstract–Alternatives to 3He are being investigated for gamma-ray insensitive neutron detection applications, including plutonium assay. One promising material is lithium-6 fluoride with silver activated zinc sulfide 6LiF/ZnS(Ag) in conjunction with a wavelength shifting plastic. Doping the 6LiF/ZnS(Ag) with nickel (Ni) has been proposed as a means of reducing the decay time of neutron signal pulses. This research performed a pulse shape comparison between Ni-doped and non-doped 6LiF/ZnS(Ag) neutron pulses. The Ni-doped 6LiF/ZnS(Ag) had a 32.7% ± 0.3 increase in neutron pulse height and a 32.4% ± 0.3 decrease in neutron pulse time compared to the non-doped 6LiF/ZnS(Ag). Doping 6LiF/ZnS(Ag) withmore » nickel may allow neutron detector operation with improved signal to noise ratios, and reduced pulse pileup affects, increasing the accuracy and range of source activities with which such a detector could operate.« less

Tuning dissociation using isoelectronically doped graphene and hexagonal boron nitride: Water and other small molecules

DOE Office of Scientific and Technical Information (OSTI.GOV)

Al-Hamdani, Yasmine S.; Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ; Alfè, Dario

2016-04-21

Novel uses for 2-dimensional materials like graphene and hexagonal boron nitride (h-BN) are being frequently discovered especially for membrane and catalysis applications. Still however, a great deal remains to be understood about the interaction of environmentally and industrially relevant molecules such as water with these materials. Taking inspiration from advances in hybridising graphene and h-BN, we explore using density functional theory, the dissociation of water, hydrogen, methane, and methanol on graphene, h-BN, and their isoelectronic doped counterparts: BN doped graphene and C doped h-BN. We find that doped surfaces are considerably more reactive than their pristine counterparts and by comparingmore » the reactivity of several small molecules, we develop a general framework for dissociative adsorption. From this a particularly attractive consequence of isoelectronic doping emerges: substrates can be doped to enhance their reactivity specifically towards either polar or non-polar adsorbates. As such, these substrates are potentially viable candidates for selective catalysts and membranes, with the implication that a range of tuneable materials can be designed.« less

Flux pinning and inhomogeneity in magnetic nanoparticle doped MgB2/Fe wires

NASA Astrophysics Data System (ADS)

Novosel, Nikolina; Pajić, Damir; Mustapić, Mislav; Babić, Emil; Shcherbakov, Andrey; Horvat, Joseph; Skoko, Željko; Zadro, Krešo

2010-06-01

The effects of magnetic nanoparticle doping on superconductivity of MgB2/Fe wires have been investigated. Fe2B and SiO2-coated Fe2B particles with average diameters 80 and 150 nm, respectively, were used as dopands. MgB2 wires with different nanoparticle contents (0, 3, 7.5, 12 wt.%) were sintered at temperature 750°C. The magnetoresistivity and critical current density Jc of wires were measured in the temperature range 2-40 K in magnetic field B <= 16 T. Both transport and magnetic Jc were determined. Superconducting transition temperature Tc of doped wires decreases quite rapidly with doping level (~ 0.5 K per wt.%). This results in the reduction of the irreversibility fields Birr(T) and critical current densities Jc(B,T) in doped samples (both at low (5 K) and high temperatures (20 K)). Common scaling of Jc(B,T) curves for doped and undoped wires indicates that the main mechanism of flux pinning is the same in both types of samples. Rather curved Kramer's plots for Jc of doped wires imply considerable inhomogeneity.

Tuning dissociation using isoelectronically doped graphene and hexagonal boron nitride: Water and other small molecules

NASA Astrophysics Data System (ADS)

Al-Hamdani, Yasmine S.; Alfè, Dario; von Lilienfeld, O. Anatole; Michaelides, Angelos

2016-04-01

Novel uses for 2-dimensional materials like graphene and hexagonal boron nitride (h-BN) are being frequently discovered especially for membrane and catalysis applications. Still however, a great deal remains to be understood about the interaction of environmentally and industrially relevant molecules such as water with these materials. Taking inspiration from advances in hybridising graphene and h-BN, we explore using density functional theory, the dissociation of water, hydrogen, methane, and methanol on graphene, h-BN, and their isoelectronic doped counterparts: BN doped graphene and C doped h-BN. We find that doped surfaces are considerably more reactive than their pristine counterparts and by comparing the reactivity of several small molecules, we develop a general framework for dissociative adsorption. From this a particularly attractive consequence of isoelectronic doping emerges: substrates can be doped to enhance their reactivity specifically towards either polar or non-polar adsorbates. As such, these substrates are potentially viable candidates for selective catalysts and membranes, with the implication that a range of tuneable materials can be designed.

Influence of arsenic flow on the crystal structure of epitaxial GaAs grown at low temperatures on GaAs (100) and (111)A substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Galiev, G. B.; Klimov, E. A.; Vasiliev, A. L.

The influence of arsenic flow in a growth chamber on the crystal structure of GaAs grown by molecular-beam epitaxy at a temperature of 240°C on GaAs (100) and (111)A substrates has been investigated. The flow ratio γ of arsenic As4 and gallium was varied in the range from 16 to 50. GaAs films were either undoped, or homogeneously doped with silicon, or contained three equidistantly spaced silicon δ-layers. The structural quality of the annealed samples has been investigated by transmission electron microscopy. It is established for the first time that silicon δ-layers in “low-temperature” GaAs serve as formation centers ofmore » arsenic precipitates. Their average size, concentration, and spatial distribution are estimated. The dependence of the film structural quality on γ is analyzed. Regions 100–150 nm in size have been revealed in some samples and identified (by X-ray microanalysis) as pores. It is found that, in the entire range of γ under consideration, GaAs films on (111)A substrates have a poorer structural quality and become polycrystalline beginning with a thickness of 150–200 nm.« less

Tailoring the Edge Structure of Molybdenum Disulfide toward Electrocatalytic Reduction of Carbon Dioxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abbasi, Pedram; Asadi, Mohammad; Liu, Cong

2017-01-24

Electrocatalytic conversion of carbon dioxide (CO2) into energy-rich fuels is considered to be the most efficient approach to achieve a carbon neutral cycle. Transition-metal dichalcogenides (TMDCs) have recently shown a very promising catalytic performance for CO2 reduction reaction in an ionic liquid electrolyte. Here, we report that the catalytic performance of molybdenum disulfide (MoS2), a member of TMDCs, can be significantly improved by using an appropriate dopant. Our electrochemical results indicate that 5% niobium (Nb)-doped vertically aligned MoS2 in ionic liquid exhibits 1 order of magnitude higher CO formation turnover frequency (TOF) than pristine MoS2 at an overpotential range ofmore » 50-150 mV. The TOF of this catalyst is also 2 orders of magnitude higher than that of Ag nanoparticles over the entire range of studied overpotentials (100-650 mV). Moreover, the in situ differential electrochemical mass spectrometry experiment shows the onset overpotential of 31 mV for this catalyst, which is the lowest onset potential for CO2 reduction reaction reported so far. Our density functional theory calculations reveal that low concentrations of Nb near the Mo edge atoms can enhance the TOF of CO formation by modifying the binding energies of intermediates to MoS2 edge atoms.« less

Recent Advances of Rare-Earth Ion Doped Luminescent Nanomaterials in Perovskite Solar Cells.

PubMed

Qiao, Yu; Li, Shuhan; Liu, Wenhui; Ran, Meiqing; Lu, Haifei; Yang, Yingping

2018-01-15

Organic-inorganic lead halide based perovskite solar cells have received broad interest due to their merits of low fabrication cost, a low temperature solution process, and high energy conversion efficiencies. Rare-earth (RE) ion doped nanomaterials can be used in perovskite solar cells to expand the range of absorption spectra and improve the stability due to its upconversion and downconversion effect. This article reviews recent progress in using RE-ion-doped nanomaterials in mesoporous electrodes, perovskite active layers, and as an external function layer of perovskite solar cells. Finally, we discuss the challenges facing the effective use of RE-ion-doped nanomaterials in perovskite solar cells and present some prospects for future research.

Fabrication and characterization of thin-film phosphor combinatorial libraries

NASA Astrophysics Data System (ADS)

Mordkovich, V. Z.; Jin, Zhengwu; Yamada, Y.; Fukumura, T.; Kawasaki, M.; Koinuma, H.

2002-05-01

The laser molecular beam epitaxy method was employed to fabricate thin-film combinatorial libraries of ZnO-based phosphors on different substrates. Fabrication of both pixel libraries, on the example of Fe-doped ZnO, and spread libraries, on the example of Eu-doped ZnO, has been demonstrated. Screening of the Fe-doped ZnO libraries led to the discovery of weak green cathodoluminescence with the maximum efficiency at the Fe content of 0.58 mol %. Screening of the Eu-doped ZnO libraries led to the discovery of unusual reddish-violet cathodoluminescence which is observed in a broad range of Eu concentration. No photoluminescence was registered in either system.

Effect of gadolinium dopant on structural, magneto-transport, magnetic and thermo-power of Pr0.8Sr0.2MnO3

NASA Astrophysics Data System (ADS)

Poojary, Thrapthi; Babu, P. D.; Sanil, Tejaswini; Daivajna, Mamatha D.

2018-07-01

In the present investigation structural, magneto-transport, magnetic and thermo-power measurements of Gadolinium (Gd) doped Pr0.8-xGdxSr0.2MnO3 (0, 0.2, 0.25 and 0.3) manganites have been done. All the samples are single phased with orthorhombic structure. Temperature variation of resistance exhibits a high temperature transition occurring at 156 K and a low temperature cusp at around 95 K for pristine sample. With Gd doping resistance behavior shows insulating behavior throughout the whole temperature range. Magneto-Resistance (MR%) increases with Gd doping. A huge increase in thermo-electric power is observed with Gd doping.

Structural and optical properties of ITO and Cu doped ITO thin films

NASA Astrophysics Data System (ADS)

Chakraborty, Deepannita; Kaleemulla, S.; Rao, N. Madhusudhana; Subbaravamma, K.; Rao, G. Venugopal

2018-04-01

(In0.95Sn0.05)2O3 and (In0.90Cu0.05Sn0.05)2O3 thin films were coated onto glass substrate by electron beam evaporation technique. The structural and optical properties of ITO and Cu doped ITO thin films have been studied by X-ray diffractometer (XRD) and UV-Vis-NIR spectrophotometer. The crystallite size obtained for ITO and Cu doped ITO thin films was in the range of 24 nm to 22 nm. The optical band gap of 4 eV for ITO thin film sample has been observed. The optical band gap decreases to 3.85 eV by doping Cu in ITO.

Electrically tunable infrared metamaterial devices

DOEpatents

Brener, Igal; Jun, Young Chul

2015-07-21

A wavelength-tunable, depletion-type infrared metamaterial optical device is provided. The device includes a thin, highly doped epilayer whose electrical permittivity can become negative at some infrared wavelengths. This highly-doped buried layer optically couples with a metamaterial layer. Changes in the transmission spectrum of the device can be induced via the electrical control of this optical coupling. An embodiment includes a contact layer of semiconductor material that is sufficiently doped for operation as a contact layer and that is effectively transparent to an operating range of infrared wavelengths, a thin, highly doped buried layer of epitaxially grown semiconductor material that overlies the contact layer, and a metallized layer overlying the buried layer and patterned as a resonant metamaterial.

Investigation on structural and electrical properties of Fe doped ZnO nanoparticles synthesized by solution combustion method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ram, Mast, E-mail: mastram1999@yahoo.com; Bala, Kanchan; Sharma, Hakikat

In the present study, nanoparticles of Fe doped zinc oxide (ZnO) [Zn{sub 1-x}Fe{sub x}O where x=0.0, 0.01, 0.02, 0.03 and 0.05] were prepared by cost effective solution combustion method. The powder X-ray diffractometry confirms the formation of single phase wurtzite structure. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to investigate the micrsostructure of Fe-doped ZnO nanoparticles. The DC electrical conductivity was found to increase with temperature and measurement was carried out in the temperature range of 300-473K. DC electrical conductivity increases with temperature and decreases with Fe doping concentration.

Magnetic and magnetotransport properties of the orthorhombic perovskites (Lu,Ca)MnO3

NASA Astrophysics Data System (ADS)

Imamura, N.; Karppinen, M.; Motohashi, T.; Yamauchi, H.

2008-01-01

Here we extend the research of the (R,Ca)MnO3 perovskites to the smallest- R end member (Lu,Ca)MnO3 . Magnetic and magnetotransport properties of the (Lu1-xCax)MnO3 system are systematically investigated in regard to carrier doping. It is found that hole doping into the antiferromagnetic x=0.0 phase, LuMnO3 , causes a spin-glass-like magnetic competition in the wide doping range of 0.1≤x≤0.6 , whereas electron doping into the antiferromagnetic x=1.0 phase, CaMnO3 , induces a large magnetoresistance effect for 0.8≤x≤0.95 .

Feasibility study of oxygen-dispensing emitters for thermionic converters, phase 1

NASA Technical Reports Server (NTRS)

Desteese, J. G.

1972-01-01

A metal/ceramic Marchuk tube was used to measure work functions of oxygen-doped tantalum, to determine applicability of the material to plasma-mode thermionic converters. Oxygen-doped tantalum was shown to increase in work function monotonically with oxygen doping in the range 0.1 to 0.3 atomic percent. Oxygenated test emitters were run at an average temperature of 2165 K and a T/T sub Cs ratio -5.8 to observe the influence of oxygen depletion. Bare work function decreased with outgassing of oxygen. Projections were made based on outgassing kinetics and area/volume ratios to calculate the longevity of oxygen doping in a practical converter. Calculations indicated that the program goal of 10,000 hr could be achieved at 1800 K with an initial oxygen doping of 1 atomic percent and a practical emitter area/volume ratio.

Ultraviolet/visible photodiode of nanostructure Sn-doped ZnO/Si heterojunction

NASA Astrophysics Data System (ADS)

Kheirandish, N.; Mortezaali, A.

2013-05-01

Sn doped ZnO nanostructures deposited on Si substrate with (100) orientation by spray pyrolysis method at temperature 450 °C. Sn/Zn atomic ratio varies from 0% to 5%. The scanning electron microscope measurements showed that size of particles reduce with increasing the doping concentration. The X-ray diffraction analysis revealed formation of the wurtzite phase of ZnO. I-V curves of Sn doped ZnO/Si were investigated in dark and shows diode-like rectifying behavior. Among doped ZnO/Si, sample with atomic ratio of Sn/Zn = 5% is a good candidate to study photodiode properties in UV/visible range. Photoelectric effects have been observed under illumination monochromatic laser light with a wavelength of 325 nm and halogen lamp. Measurements demonstrate that the photodiode has high sensitivity and reproducibility to halogen light respect to laser light.

Metal-to-insulator crossover in YBa2Cu3Oy probed by low-temperature quasiparticle heat transport.

PubMed

Sun, X F; Segawa, Kouji; Ando, Yoichi

2004-09-03

It was recently demonstrated that in La2-xSrxCuO4 the magnetic-field (H) dependence of the low-temperature thermal conductivity kappa up to 16 T reflects whether the normal state under high magnetic field is a metal or an insulator. We measure the H dependence of kappa in YBa(2)Cu(3)O(y) (YBCO) at subkelvin temperatures for a wide doping range, and find that at low doping the kappa(H) behavior signifies the change in the ground state in this system as well. Surprisingly, the critical doping is found to be located deeply inside the underdoped region, about the hole doping of 0.07 hole/Cu; this critical doping is apparently related to the stripe correlations as revealed by the in-plane resistivity anisotropy.

Hole mobility in various transition-metal-oxides doped organic semiconductor films

NASA Astrophysics Data System (ADS)

Yoo, Seung-Jun; Lee, Jeong-Hwan; Kim, Jae-Min; Kim, Jang-Joo

2017-01-01

Hole mobility in various p-doped organic semiconductors possessing different energetic disorder parameters in low-to-moderate doping range is reported. The hole mobility is reduced by orders of magnitude and converged to 10-7-10-6 cm2/Vs at a doping concentration of 5 mol. % for all the materials, even though the pristine organic films possess orders of magnitude of different mobilities from 10-5 to 10-3 cm2/Vs. These results indicate that the ionized dopants behave as traps for generated carriers to reduce the mobility. Further increase in the doping concentration either increases or decreases the mobility depending on the energetic disorder parameters of the organic films. These phenomena are interpreted based on the Coulomb trap depth of the ionized dopants and energetic disorder of the host layers.

Phase Transformation and Lattice Parameter Changes of Non-trivalent Rare Earth-Doped YSZ as a Function of Temperature

NASA Astrophysics Data System (ADS)

Jiang, Shengli; Huang, Xiao; He, Zhang; Buyers, Andrew

2018-01-01

To examine the effect of doping/co-doping on high-temperature phase compositions of YSZ, stand-alone YSZ and CeO2 and Nb2O5 co-doped YSZ samples were prepared using mechanical alloy and high-temperature sintering. XRD analysis was performed on these samples from room temperature to 1100 °C. The results show that the structure for the co-doped samples tends to be thermally stable when the test temperature is higher than a critical value. Monoclinic phase was dominant in Nb2O5 co-doped YSZ at temperatures lower than 600 °C, while for the YSZ and CeO2 co-doped YSZ, cubic/tetragonal phase was dominant in the whole test temperature range. The lattice parameters for all the samples increase with increasing test temperature generally. The lattice parameters for the two non-trivalent rare earth oxides co-doped YSZ show that the lattice parameter a for the cubic phase of the Ce4+ co-doped YSZ is consistently greater than that of 7YSZ which is related to the presence of larger radius of Ce4+ in the matrix. The lattice parameters a, b, c for the monoclinic phase of Ce4+ co-doped YSZ are much closer to each other than that of the Nb5+ co-doped YSZ, indicating the former has better tendency to form cubic/tetragonal phase, which is desired for vast engineering applications.

Optoelectronic Properties of X-Doped (X = O, S, Te) Photovoltaic CSe with Puckered Structure.

PubMed

Zhang, Qiang; Xin, Tianyuan; Lu, Xiaoke; Wang, Yuexia

2018-03-16

We exploited novel two-dimensional (2D) carbon selenide (CSe) with a structure analogous to phosphorene, and probed its electronics and optoelectronics. Calculating phonon spectra using the density functional perturbation theory (DFPT) method indicated that 2D CSe possesses dynamic stability, which made it possible to tune and equip CSe with outstanding properties by way of X-doping (X = O, S, Te), i.e., X substituting Se atoms. Then systematic investigation on the structural, electronic, and optical properties of pristine and X-doped monolayer CSe was carried out using the density functional theory (DFT) method. It was found that the bonding feature of C-X is intimately associated with the electronegativity and radius of the doping atoms, which leads to diverse electronic and optical properties for doping different group VI elements. All the systems possess direct gaps, except for O-doping. Substituting O for Se atoms in monolayer CSe brings about a transition from a direct Γ-Γ band gap to an indirect Γ-Y band gap. Moreover, the value of the band gap decreases with increased doping concentration and radius of doping atoms. A red shift in absorption spectra occurs toward the visible range of radiation after doping, and the red-shift phenomenon becomes more obvious with increased radius and concentration of doping atoms. The results can be useful for filtering doping atoms according to their radius or electronegativity in order to tailor optical spectra efficiently.

Phase transformation and magnetic properties of MnAl powders prepared by elemental-doping and salt-assisted ball milling

NASA Astrophysics Data System (ADS)

Qian, Hui-Dong; Si, Ping-Zhan; Choi, Chul-Jin; Park, Jihoon; Cho, Kyung Mox

2018-05-01

The effects of elemental doping of Si and Fe on the ɛ→τ phase transformation and the magnetic properties of MnAl were studied. The magnetic powders of Si- and Fe-doped MnAl were prepared by using induction melting followed by water-quenching, annealing, and salt-assisted ball-milling. The Fe-doped MnAl powders are mainly composed of the L10-structured τ-phase, while the Si-doped MnAl are composed of τ-phase and a small fraction of γ2- and β-phases. A unique thin leaves-like morphology with thickness of several tens of nanometers and diameter size up to 500 nm were observed in the Si-doped MnAl powders. The Fe-doped MnAl powders show irregular shape with much larger dimensions in the range from several to 10 μm. The morphology difference of the samples was ascribed to the variation of the mechanical properties affected by different doping elements. The phase transformation temperatures of the ɛ-phase of the samples were measured. The doping of Fe decreases the onset temperature of the massive phase transformation in MnAl, while the Si-doping increases the massive phase transformation temperature. Both Fe and Si increase the Curie temperature of MnAl. A substantially enhanced coercivity up to 0.45 T and 0.42 T were observed in the ball-milled MnAl powders doped with Si and Fe, respectively.

Optoelectronic Properties of X-Doped (X = O, S, Te) Photovoltaic CSe with Puckered Structure

PubMed Central

Zhang, Qiang; Xin, Tianyuan; Lu, Xiaoke; Wang, Yuexia

2018-01-01

We exploited novel two-dimensional (2D) carbon selenide (CSe) with a structure analogous to phosphorene, and probed its electronics and optoelectronics. Calculating phonon spectra using the density functional perturbation theory (DFPT) method indicated that 2D CSe possesses dynamic stability, which made it possible to tune and equip CSe with outstanding properties by way of X-doping (X = O, S, Te), i.e., X substituting Se atoms. Then systematic investigation on the structural, electronic, and optical properties of pristine and X-doped monolayer CSe was carried out using the density functional theory (DFT) method. It was found that the bonding feature of C-X is intimately associated with the electronegativity and radius of the doping atoms, which leads to diverse electronic and optical properties for doping different group VI elements. All the systems possess direct gaps, except for O-doping. Substituting O for Se atoms in monolayer CSe brings about a transition from a direct Γ-Γ band gap to an indirect Γ-Y band gap. Moreover, the value of the band gap decreases with increased doping concentration and radius of doping atoms. A red shift in absorption spectra occurs toward the visible range of radiation after doping, and the red-shift phenomenon becomes more obvious with increased radius and concentration of doping atoms. The results can be useful for filtering doping atoms according to their radius or electronegativity in order to tailor optical spectra efficiently. PMID:29547504

Phase Transformation and Lattice Parameter Changes of Non-trivalent Rare Earth-Doped YSZ as a Function of Temperature

NASA Astrophysics Data System (ADS)

Jiang, Shengli; Huang, Xiao; He, Zhang; Buyers, Andrew

2018-05-01

To examine the effect of doping/co-doping on high-temperature phase compositions of YSZ, stand-alone YSZ and CeO2 and Nb2O5 co-doped YSZ samples were prepared using mechanical alloy and high-temperature sintering. XRD analysis was performed on these samples from room temperature to 1100 °C. The results show that the structure for the co-doped samples tends to be thermally stable when the test temperature is higher than a critical value. Monoclinic phase was dominant in Nb2O5 co-doped YSZ at temperatures lower than 600 °C, while for the YSZ and CeO2 co-doped YSZ, cubic/tetragonal phase was dominant in the whole test temperature range. The lattice parameters for all the samples increase with increasing test temperature generally. The lattice parameters for the two non-trivalent rare earth oxides co-doped YSZ show that the lattice parameter a for the cubic phase of the Ce4+ co-doped YSZ is consistently greater than that of 7YSZ which is related to the presence of larger radius of Ce4+ in the matrix. The lattice parameters a, b, c for the monoclinic phase of Ce4+ co-doped YSZ are much closer to each other than that of the Nb5+ co-doped YSZ, indicating the former has better tendency to form cubic/tetragonal phase, which is desired for vast engineering applications.

Nitrogen and sulfur co-doped carbon dots with strong blue luminescence

NASA Astrophysics Data System (ADS)

Ding, Hui; Wei, Ji-Shi; Xiong, Huan-Ming

2014-10-01

Sulfur-doped carbon dots (S-CDs) with a quantum yield (QY) of 5.5% and nitrogen, sulfur co-doped carbon dots (N,S-CDs) with a QY of 54.4% were synthesized, respectively, via the same hydrothermal route using α-lipoic acid as the carbon source. The obtained S-CDs and N,S-CDs had similar sizes but different optical features. The QY of N,S-CDs was gradually enhanced when extending the reaction time to increase the nitrogen content. After careful characterization of these CDs, the doped nitrogen element was believed to be in the form of C&z.dbd;N and C-N bonds which enhanced the fluorescence efficiency significantly. Meanwhile, the co-doped sulfur element was found to be synergistic for nitrogen doping in N,S-CDs. The optimal N,S-CDs were successfully employed as good multicolor cell imaging probes due to their fine dispersion in water, excitation-dependent emission, excellent fluorescence stability and low toxicity. Besides, such N,S-CDs showed a wide detection range and excellent accuracy as fluorescent sensors for Fe3+ ions.Sulfur-doped carbon dots (S-CDs) with a quantum yield (QY) of 5.5% and nitrogen, sulfur co-doped carbon dots (N,S-CDs) with a QY of 54.4% were synthesized, respectively, via the same hydrothermal route using α-lipoic acid as the carbon source. The obtained S-CDs and N,S-CDs had similar sizes but different optical features. The QY of N,S-CDs was gradually enhanced when extending the reaction time to increase the nitrogen content. After careful characterization of these CDs, the doped nitrogen element was believed to be in the form of C&z.dbd;N and C-N bonds which enhanced the fluorescence efficiency significantly. Meanwhile, the co-doped sulfur element was found to be synergistic for nitrogen doping in N,S-CDs. The optimal N,S-CDs were successfully employed as good multicolor cell imaging probes due to their fine dispersion in water, excitation-dependent emission, excellent fluorescence stability and low toxicity. Besides, such N,S-CDs showed a wide detection range and excellent accuracy as fluorescent sensors for Fe3+ ions. Electronic supplementary information (ESI) available: Experimental details and comparable characterization of three kinds of CDs. See DOI: 10.1039/c4nr04267k

Facile hydrothermal synthesis and characterization of cesium-doped PbI2 nanostructures for optoelectronic, radiation detection and photocatalytic applications

NASA Astrophysics Data System (ADS)

Shkir, Mohd; AlFaify, S.; Yahia, I. S.; Hamdy, Mohamed S.; Ganesh, V.; Algarni, H.

2017-10-01

Low-temperature hydrothermal-assisted synthesis of pure and cesium (Cs) (1, 3, 5, 7 and 10 wt%) doped lead iodide (PbI2) nanorods and nanosheets have been achieved successfully for the first time. The structural and vibrational studies confirm the formation of a 2H-polytypic PbI2 predominantly. Scanning electron microscope analysis confirms the formation of well-aligned nanorods of average size 100 nm at low concentration and nanosheets of average thicknesses in the range of 20-40 nm at higher concentrations of Cs doping. The presence of Cs doping was confirmed by energy dispersive X-ray study. Ultra-violet-visible absorbance spectra were recorded, and energy gap was calculated in the range of 3.33 to 3.45 eV for pure and Cs-doped PbI2 nanostructures which is higher than the bulk value (i.e., 2.27 eV) due to quantum confinement effect. Dielectric constant, loss, and AC conductivity studies have been done. Enhancement in Gamma linear absorption coefficient due to Cs doping confirms the suitability of prepared nanostructures for radiation detection applications. Furthermore, the photocatalytic performance of the synthesized nanostructures was evaluated in the decolorization of methyl green (MG) and methyl orange (MO) under the illumination of visible light (λ > 420 nm). The observed photocatalytic activity for 5 and 7 wt% Cs-doped PbI2 was observed to be more than pure PbI2 and also > 10 times higher than the commercially available photocatalysts. The results suggest that the prepared nanostructures are highly applicable in optoelectronic, radiation detection and many other applications. [Figure not available: see fulltext.

Optical and physical properties of sodium lead barium borate glasses doped with praseodymium ion

NASA Astrophysics Data System (ADS)

Lenkennavar, Susheela K.; Madhu, A.; Eraiah, B.; Kokila, M. K.

2018-05-01

Praseodymium doped sodium lead barium borate glasses have been prepared using single step melt quenching technique. The XRD spectrum confirms amorphous nature of glasses. The optical absorbance studies were carried out on these glasses using PekinElemer Lambda-35 Uv-Vis spectrometer in the range of 200 -1100 nm. The optical direct band gap energies were found to be in the range of 3.62 eV to 3.69 eV and indirect band gap energies were found to be in the range of 3.57 eV to 3.62eV. The refractive indices were measured by using Abbe refractometer the values are in the range of 1.620 to 1.625.

Scintillation properties of YAlO3 doped with Lu and Nd perovskite single crystals

NASA Astrophysics Data System (ADS)

Akatsuka, Masaki; Usui, Yuki; Nakauchi, Daisuke; Kato, Takumi; Kawano, Naoki; Okada, Go; Kawaguchi, Noriaki; Yanagida, Takayuki

2018-05-01

YAlO3 (YAP) single crystals doped with Lu and Nd were grown by the Floating Zone (FZ) method to evaluate their scintillation properties particularly emissions in the near-infrared (NIR) range. The Nd concentration was fixed to 0 or 1 mol% while the Lu concentration was varied from 0 to 30%. When X-ray was irradiated, the scintillation of Nd-doped samples was observed predominantly at 1064 nm due to 4F3/2 → 4I11/2 transition of Nd3+. In contrast, a weak emission around 700 nm appeared in the samples doped with only Lu, and the emission origin was attributed to defect centers. In the Nd3+-doped samples, the decay time was 94-157 μs due to the 4f-4f transitions of Nd3+ whereas the Lu-doped samples showed signal with the decay time of 1.45-1.54 ms. The emission origin of the latter signal was attributed to the perovskite lattice defect.

Thermoluminescence properties of Yb-Tb-doped SiO2 optical fiber subject to 6 and 10 MV photon irradiation

NASA Astrophysics Data System (ADS)

Sahini, M. H.; Wagiran, H.; Hossain, I.; Saeed, M. A.; Ali, H.

2014-08-01

This paper reports thermoluminescence characteristics of thermoluminescence dosimetry 100 chips and Yb-Tb-doped optical fibers irradiated with 6 and 10 MV photons. Thermoluminescence response of both dosimeters increases over a wide photon dose range from 0.5 to 4 Gy. Yb-Tb-doped optical fibers demonstrate useful thermoluminescence properties and represent a good candidate for thermoluminescence dosimetry application with ionizing radiation. The results of this fiber have been compared with those of commercially available standard thermoluminescence dosimetry-100 media. Commercially available Yb-Tb-doped optical fibers and said standard media are found to yield a linear relationship between dose- and thermoluminescence signal, although Yb-Tb-doped optical fibers provide only 10 % of the sensitivity of thermoluminescence dosimetry-100. With better thermoluminescence characteristics such as small size (125 μm diameter), high flexibility, easy of handling and low cost, as compared to other thermoluminescence materials, indicate that commercial Yb-Tb-doped optical fiber is a promising thermoluminescence material for variety of applications.

Structural, morphological and magnetic properties of pure and Ni-doped ZnO nanoparticles synthesized by sol-gel method

NASA Astrophysics Data System (ADS)

Undre, Pallavi G.; Birajdar, Shankar D.; Kathare, R. V.; Jadhav, K. M.

2018-05-01

In this work pure and Ni-doped ZnO nanoparticles have been prepared by sol-gel method. Influence of nickel doping on structural, morphological and magnetic properties of prepared nanoparticles was investigated by X-ray diffraction technique (XRD), Scanning electron microscopy (SEM) and Pulse field magnetic hysteresis loop. X-ray diffraction pattern shows the formation of a single phase with hexagonal wurtzite structure of both pure and Ni-doped ZnO nanoparticles. The lattice parameters `an' and `c' of Ni-doped ZnO is slightly less than that of pure ZnO nanoparticles. The crystalline size of prepared nanoparticles is found to be in 29 and 31 nm range. SEM technique used to examine the surface morphology of samples, SEM image confirms the nanocrystalline nature of present samples. From the pulse field hysteresis loop technique pure and Ni-doped ZnO nanoparticles show diamagnetic and ferromagnetic behavior at room temperature respectively.

Scintillation properties of Pr 3+-doped lutetium and yttrium aluminum garnets: Comparison with Ce 3+-doped ones

NASA Astrophysics Data System (ADS)

Mares, Jiri A.; Nikl, Martin; Beitlerova, Alena; Blazek, Karel; Horodysky, Petr; Nejezchleb, Karel; D'Ambrosio, Carmelo

2011-12-01

Scintillation properties of Pr 3+-doped LuAG and YAG crystals were investigated and compared with those of Ce 3+-doped ones. The highest L.Y.'s were observed with the longest shaping time 10 μs. They can reach up to ˜16,000 ph/MeV or ˜23,500 ph/MeV for LuAG:Pr and LuAG:Ce, respectively. Energy resolutions (FWHM) are a bit better with LuAG:Pr than those of LuAG:Ce, e.g. at 662 keV FWHM are around 6% and between 8-12%, respectively. There were observed no large changes in proportionality of Pr 3+- or Ce 3+-doped LuAG or YAG crystals but the best proportionality has YAP:Ce crystal. Pr 3+- or Ce 3+-doped LuAG crystals exhibit slow decay components in the time range 1.5-3.5 μs while those of YAG ones have shorter decay components between 0.3-1.7 μs.

Using a double-doping strategy to improve physical properties of nanostructured CdO films

NASA Astrophysics Data System (ADS)

Aydin, R.; Sahin, B.

2018-06-01

In this present study nanostructured dually doped samples of Cd1‑x‑yMgxMyO (M: Sn, Pb, Bi) are synthesized by SILAR method. The effects of the mono and dual doping on the structural, morphological and optoelectronic characteristics of CdO nanoparticles are examined. The SEM images verify that deposited CdO films are nano-sized. Also the SEM computations demonstrated that the morphological surface structures of the films were influenced from the Mg mono doping and (Mg, Sn), (Mg, Pb) and (Mg, Bi) dual doping. The XRD designs specified that all the CdO samples have polycrystalline structure exhibiting cubic crystal form with dominant peaks of (111) and (220). The results display that Mg and (Mg, Sn), (Mg, Pb) and (Mg, Bi) ions were successfully doped into CdO film matrix. The UV spectroscopy results show that the optical energy band gap of the CdO films, ranging from 2.21 to 2.66 eV, altered with the dopant materials.

Optical properties modification induced by laser radiation in noble-metal-doped glasses

NASA Astrophysics Data System (ADS)

Nedyalkov, N.; Stankova, N. E.; Koleva, M. E.; Nikov, R.; Atanasov, P.; Grozeva, M.; Iordanova, E.; Yankov, G.; Aleksandrov, L.; Iordanova, R.; Karashanova, D.

2018-03-01

We present results on laser-induced color changes in gold- and silver-doped glass. The doped borosilicate glass was prepared by conventional melt quenching. The study was focused on the change of the optical properties after irradiation of the glass by femtosecond laser pulses. Under certain conditions, the laser radiation induces defects associated with formation of color centers in the material. We studied this process in a broad range of laser radiation wavelengths – from UV to IR, and observed changes in the color of the irradiated areas after annealing of the processed glass samples, the color being red for the gold-doped glass red and yellow for the silver-doped glass. The structural and morphological analyses performed indicated that this effect is related to formation of metal nanoparticles inside the material. The results obtained show that femtosecond laser processing of noble-metal-doped glasses can be used for fabrication of 3D-nanoparticles systems in transparent materials with application as novel optical components.

Pentacene Schottky diodes studied by impedance spectroscopy: Doping properties and trap response

NASA Astrophysics Data System (ADS)

Pahner, Paul; Kleemann, Hans; Burtone, Lorenzo; Tietze, Max L.; Fischer, Janine; Leo, Karl; Lüssem, Björn

2013-11-01

We study doping properties and charge carrier trap distributions in pentacene Schottky diodes doped by the fluorinated fullerene derivate C60F36 and 2,2'-(perdiylidene)dimalononitrile (F6-TCNNQ) upon small signal excitation. We show that the charge carrier depletion zones present in these Schottky diodes are tunable by the applied bias and temperature. Mott-Schottky evaluations yield reduced doping efficiencies and dopant activation energies between 19 and 54 meV. In the low-frequency regime, we resolve additional capacitive contributions from inherent charge carrier traps. A Gaussian distributed trap center 0.6 eV above the hole transport level with a density in the range of 1016 cm-3 depending on the material purity is found to be an intrinsic feature of the pentacene matrix. Upon doping, the deep Gaussian trap center saturates in density and broad exponentially tailing trap distributions arise. Subsequent ultraviolet photoelectron spectroscopy measurements are conducted to inspect for energetic broadening due to doping.

Carbon-doping-induced negative differential resistance in armchair phosphorene nanoribbons

NASA Astrophysics Data System (ADS)

Guo, Caixia; Xia, Congxin; Wang, Tianxing; Liu, Yufang

2017-03-01

By using a combined method of density functional theory and non-equilibrium Green’s function formalism, we investigate the electronic transport properties of carbon-doped armchair phosphorene nanoribbons (APNRs). The results show that C atom doping can strongly affect the electronic transport properties of the APNR and change it from semiconductor to metal. Meanwhile, obvious negative differential resistance (NDR) behaviors are obtained by tuning the doping position and concentration. In particular, with reducing doping concentration, NDR peak position can enter into mV bias range. These results provide a theoretical support to design the related nanodevice by tuning the doping position and concentration in the APNRs. Project supported by the National Natural Science Foundation of China (No. 11274096), the University Science and Technology Innovation Team Support Project of Henan Province (No. 13IRTSTHN016), the University key Science Research Project of Henan Province (No.16A140043). The calculation about this work was supported by the High Performance Computing Center of Henan Normal University.

Nitrogen-Doped Carbon Dots as A New Substrate for Sensitive Glucose Determination.

PubMed

Ji, Hanxu; Zhou, Feng; Gu, Jiangjiang; Shu, Chen; Xi, Kai; Jia, Xudong

2016-05-04

Nitrogen-doped carbon dots are introduced as a novel substrate suitable for enzyme immobilization in electrochemical detection metods. Nitrogen-doped carbon dots are easily synthesised from polyacrylamide in just one step. With the help of the amino group on chitosan, glucose oxidase is immobilized on nitrogen-doped carbon dots-modified carbon glassy electrodes by amino-carboxyl reactions. The nitrogen-induced charge delocalization at nitrogen-doped carbon dots can enhance the electrocatalytic activity toward the reduction of O₂. The specific amino-carboxyl reaction provides strong and stable immobilization of GOx on electrodes. The developed biosensor responds efficiently to the presence of glucose in serum samples over the concentration range from 1 to 12 mM with a detection limit of 0.25 mM. This novel biosensor has good reproducibility and stability, and is highly selective for glucose determination under physiological conditions. These results indicate that N-doped quantum dots represent a novel candidate material for the construction of electrochemical biosensors.

Adsorption of formamide over pristine and Al-doped boron nitride nanosheets: A dispersion-corrected DFT study.

PubMed

Esrafili, Mehdi D; Mousavian, Parisasadat; Arjomandi Rad, Farzad

2018-06-01

Using the dispersion-corrected DFT calculations, different adsorption modes of formamide molecule are studied over the pristine and Al-doped boron nitride nanosheets (BNNS). It is found that the interaction between the Al atom and its neighboring N atoms in the Al-doped BNNS is very strong, which would hinder the dispersion and clustering of the Al atoms over the BNNS surface. Unlike the pristine nanosheet, the electronic properties of Al-doped BNNS are very sensitive to the formamide adsorption. The adsorption energies of formamide over the Al-doped sheet are in the range of -0.93 to -1.85 eV, which indicates the quite strong interaction of this molecule with the surface. Moreover, the dehydrogenation of formamide over the Al-doped BNNS is examined. According to our results, the N-H bond scission of formamide is more energetically favorable than the C-H one. Copyright © 2018 Elsevier Inc. All rights reserved.

Electronic properties and surface reactivity of SrO-terminated SrTiO3 and SrO-terminated iron-doped SrTiO3

PubMed Central

Staykov, Aleksandar; Tellez, Helena; Druce, John; Wu, Ji; Ishihara, Tatsumi; Kilner, John

2018-01-01

Abstract Surface reactivity and near-surface electronic properties of SrO-terminated SrTiO3 and iron doped SrTiO3 were studied with first principle methods. We have investigated the density of states (DOS) of bulk SrTiO3 and compared it to DOS of iron-doped SrTiO3 with different oxidation states of iron corresponding to varying oxygen vacancy content within the bulk material. The obtained bulk DOS was compared to near-surface DOS, i.e. surface states, for both SrO-terminated surface of SrTiO3 and iron-doped SrTiO3. Electron density plots and electron density distribution through the entire slab models were investigated in order to understand the origin of surface electrons that can participate in oxygen reduction reaction. Furthermore, we have compared oxygen reduction reactions at elevated temperatures for SrO surfaces with and without oxygen vacancies. Our calculations demonstrate that the conduction band, which is formed mainly by the d-states of Ti, and Fe-induced states within the band gap of SrTiO3, are accessible only on TiO2 terminated SrTiO3 surface while the SrO-terminated surface introduces a tunneling barrier for the electrons populating the conductance band. First principle molecular dynamics demonstrated that at elevated temperatures the surface oxygen vacancies are essential for the oxygen reduction reaction. PMID:29535797

Dynamic control of mode field diameter and effective area by germanium doping of hexagonal photonic crystal fibers

NASA Astrophysics Data System (ADS)

Miyagi, Kazuya; Namihira, Yoshinori; Kasamatsu, Yuho; Hossain, Md. Anwar

2013-07-01

We demonstrate dynamic control of the effective area ( A eff) of photonic crystal fibers (PCFs) in the range of 18.1-8.22 μm2 and the mode field diameter in the range of 4.78-3.42 μm. This control was realized by altering their structural properties and varying the germanium (Ge) doping rate, which changed the refractive index difference (Δ n Ge) between 1.0 and 3.0% relative to the refractive index of the silica cladding. This was achieved by adjusting the Ge doping rate in the core and changing the radius ( d core) of the doped region, i.e., by changing the equivalent refractive index, using numerical calculations. Numerical results were verified by comparison with experimental results for a fabricated Gedoped PCF obtained by far-field scanning based on the ITU-T Petermann II definition. The proposed approach will simultaneously decrease Aeff and achieves high light confinement and high nonlinearity in PCFs. It enables architectonics/controllability of highly nonlinear PCFs with passive optical devices in photonic networks and life science applications.

Electron spin resonance studies of Bi1-xScxFeO3 nanoparticulates: Observation of an enhanced spin canting over a large temperature range

NASA Astrophysics Data System (ADS)

Titus, S.; Balakumar, S.; Sakar, M.; Das, J.; Srinivasu, V. V.

2017-12-01

Bi1-xScxFeO3 (x = 0.0, 0.1, 0.15, 0.25) nano particles were synthesized by sol gel method. We then probed the spin system in these nano particles using electron spin resonance technique. Our ESR results strongly suggest the scenario of modified spin canted structures. Spin canting parameter Δg/g as a function of temperature for Scandium doped BFO is qualitatively different from undoped BFO. A broad peak is observed for all the Scandium doped BFO samples and an enhanced spin canting over a large temperature range (75-210 K) in the case of x = 0.15 doping. We also showed that the asymmetry parameter and thereby the magneto-crystalline anisotropy in these BSFO nanoparticles show peaks around 230 K for (x = 0.10 and 0.15) and beyond 300 K for x = 0.25 system. Thus, we established that the Sc doping significantly modifies the spin canting and magneto crystalline anisotropy in the BFO system.

Investigation of the thermoelectric properties of Nb and oxygen vacancy co-doped SrTiO3 ceramics

NASA Astrophysics Data System (ADS)

Gong, Jing; Yuan, Zhanhui; Xu, Shikui; Li, Zhuangzhi; Xu, Jingzhou; Tang, Guide

2017-05-01

High quality Nb doped SrTi1-x Nb x O3 polycrystalline ceramics were fabricated using a conventional solid state reaction method. By annealing in a reducing atmosphere at an elevated temperature, a series of Nb and oxygen vacancy co-doped SrTi1-x Nb x O3-δ (0  ⩽  x  ⩽  0.2) samples was obtained. The thermoelectric properties of the samples were measured in the temperature range from 15 K to 380 K. These measurements showed that the transport behavior of these samples is consistent with the small polaron conduction mechanism for the temperature range from room temperature to 380 K. Furthermore, after annealing, samples with a lower Nb doping were found to give a relative higher ZT value, while excess Nb led to a reduced ZT value. The x  =  0.02 sample gave the optimal thermoelectric properties, with a ZT value of 0.023 at 300 K, and 0.028 at 380 K.

Highly doped InP as a low loss plasmonic material for mid-IR region.

PubMed

Panah, M E Aryaee; Takayama, O; Morozov, S V; Kudryavtsev, K E; Semenova, E S; Lavrinenko, A V

2016-12-12

We study plasmonic properties of highly doped InP in the mid-infrared (IR) range. InP was grown by metal-organic vapor phase epitaxy (MOVPE) with the growth conditions optimized to achieve high free electron concentrations by doping with silicon. The permittivity of the grown material was found by fitting the calculated infrared reflectance spectra to the measured ones. The retrieved permittivity was then used to simulate surface plasmon polaritons (SPPs) propagation on flat and structured surfaces, and the simulation results were verified in direct experiments. SPPs at the top and bottom interfaces of the grown epilayer were excited by the prism coupling. A high-index Ge hemispherical prism provides efficient coupling conditions of SPPs on flat surfaces and facilitates acquiring their dispersion diagrams. We observed diffraction into symmetry-prohibited diffraction orders stimulated by the excitation of surface plasmon-polaritons in a periodically structured epilayer. Characterization shows good agreement between the theory and experimental results and confirms that highly doped InP is an effective plasmonic material aiming it for applications in the mid-IR wavelength range.

Bound-to-bound midinfrared intersubband absorption in carbon-doped GaAs /AlGaAs quantum wells

NASA Astrophysics Data System (ADS)

Malis, Oana; Pfeiffer, Loren N.; West, Kenneth W.; Sergent, A. Michael; Gmachl, Claire

2005-08-01

Bound-to-bound intersubband absorption in the valence band of modulation-doped GaAs quantum wells with digitally alloyed AlGaAs barriers was studied in the midinfrared wavelength range. A high-purity solid carbon source was used for the p-type doping. Strong narrow absorption peaks due to heavy-to-heavy hole transitions are observed with out-of-plane polarized light, and weaker broader features with in-plane polarized light. The heavy-to-heavy hole transition energy spans the spectral range between 206 to 126 meV as the quantum well width is increased from 25 to 45 Å. The experimental results are found to be in agreement with calculations of a six-band k •p model taking into account the full band structure of the digital alloy.

Effect of optical damage resistant dopants on the dielectric properties of LiNbO3: Insight from broadband impedance spectroscopy and Raman scattering

NASA Astrophysics Data System (ADS)

Cochard, Charlotte; Guennou, Mael; Spielmann, Thiemo; van Hoof, Niels; Halpin, Alexei; Granzow, Torsten

2018-04-01

Optical damage limits the application range of congruent LiNbO3. This problem is commonly overcome by adding optical-damage-resistant cations. Here, the influence of doping with optical-damage-resistant Mg and Zn on the ionic and piezoelectric contributions to the dielectric permittivity is investigated in a broad frequency range (1 mHz-2 THz). It is shown that the two dopants have radically different influences on the variation of ionic permittivity with doping, in spite of their similarities with respect to the crystallographic structure. Raman spectroscopy reveals that the difference in permittivity can be traced to the effect of Mg and Zn doping on the susceptibility of the phonon modes. Both observations point to differences in the defect incorporation mechanisms.

Multicolour synthesis in lanthanide-doped nanocrystals through cation exchange in water

NASA Astrophysics Data System (ADS)

Han, Sanyang; Qin, Xian; An, Zhongfu; Zhu, Yihan; Liang, Liangliang; Han, Yu; Huang, Wei; Liu, Xiaogang

2016-10-01

Meeting the high demand for lanthanide-doped luminescent nanocrystals across a broad range of fields hinges upon the development of a robust synthetic protocol that provides rapid, just-in-time nanocrystal preparation. However, to date, almost all lanthanide-doped luminescent nanomaterials have relied on direct synthesis requiring stringent controls over crystal nucleation and growth at elevated temperatures. Here we demonstrate the use of a cation exchange strategy for expeditiously accessing large classes of such nanocrystals. By combining the process of cation exchange with energy migration, the luminescence properties of the nanocrystals can be easily tuned while preserving the size, morphology and crystal phase of the initial nanocrystal template. This post-synthesis strategy enables us to achieve upconversion luminescence in Ce3+ and Mn2+-activated hexagonal-phased nanocrystals, opening a gateway towards applications ranging from chemical sensing to anti-counterfeiting.

Optical spectra of La2-xSrxCuO4: Effect of carrier doping on the electronic structure of the CuO2 plane

NASA Astrophysics Data System (ADS)

Uchida, S.; Ido, T.; Takagi, H.; Arima, T.; Tokura, Y.; Tajima, S.

1991-04-01

Optical reflectivity spectra are studied for single crystals of the prototypical high-Tc system La2-xSrxCuO4 over a wide compositional range 0<=x<=0.34, which covers insulating, superconducting, and normal metallic phases. The measurements are made at room temperature over an energy range from 0.004 to 35 eV for the polarization parallel to the CuO2 planes. They are also extended to the perpendicular polarization to study anisotropy and to discriminate the contribution from the CuO2 plane. The present study focuses on the x dependence of the optical spectrum, which makes it possible to sort out the features of the excitations in the CuO2 plane and thus to characterize the electronic structure of the CuO2 plane in the respective phase. Upon doping into the parent insulator La2CuO4 with a charge-transfer energy gap of about 2 eV the spectral weight is rapidly transferred from the charge-transfer excitation to low-energy excitations below 1.5 eV. The low-energy spectrum is apparently composed of two contributions; a Drude-type one peaked at ω=0 and a broad continuum centered in the midinfrared range. The high-Tc superconductivity is realized as doping proceeds and when the transfer of the spectrum weight is saturated. The resulting spectrum in the high-Tc regime is suggestive of a strongly itinerant character of the state in the moderately doped CuO2 plane while appreciable weight remains in the charge-transfer energy region. The spectrum exhibits a second drastic change for heavy doping (x~0.25) corresponding to the superconductor-to-normal-metal transition and becomes close to that of a Fermi liquid. The results are universal for all the known cuprate superconductors including the electron-doped compounds, and they reconcile the dc transport properties with the high-energy spectroscopic results.

Plasmon mediated cathodic photocurrent generation in sol-gel synthesized doped SrTiO{sub 3} nanofilms

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sugavaneshwar, Ramu Pasupathi, E-mail: r.p.sugavaneshwar@nims.go.jp, E-mail: NAGAO.Tadaaki@nims.go.jp; Chen, Kai; Lakshminarayana, Gandham

2015-11-01

Thin films of SrTiO{sub 3} (STO) and Rh-doped SrTiO{sub 3} (Rh-STO) were synthesized by sol-gel method and loaded with Ag nanoparticles. Pristine STO films exhibited anodic photocurrent while Rh-STO exhibited cathodic photocurrent. An enhancement in the overall cathodic photocurrent is observed with Ag nanoparticle loading and an additional enhancement in the visible light range is seen from the incident photon-to-current efficiency spectrum due to synergetic effect of Rh doping and Ag loading in STO.

Metal modulation epitaxy growth for extremely high hole concentrations above 1019 cm-3 in GaN

NASA Astrophysics Data System (ADS)

Namkoong, Gon; Trybus, Elaissa; Lee, Kyung Keun; Moseley, Michael; Doolittle, W. Alan; Look, David C.

2008-10-01

The free hole carriers in GaN have been limited to concentrations in the low 1018cm-3 range due to the deep activation energy, lower solubility, and compensation from defects, therefore, limiting doping efficiency to about 1%. Herein, we report an enhanced doping efficiency up to ˜10% in GaN by a periodic doping, metal modulation epitaxy growth technique. The hole concentrations grown by periodically modulating Ga atoms and Mg dopants were over ˜1.5×1019cm-3.

Doping-Induced Type-II to Type-I Transition and Interband Optical Gain in InAs/AlSb Quantum Wells

NASA Technical Reports Server (NTRS)

Kolokolov, K. I.; Ning, C. Z.

2003-01-01

We show that proper doping of the barrier regions can convert the well-known type-II InAs/AlSb QWs to type I, producing strong interband transitions comparable to regular type-I QWs. The interband gain for TM mode is as high as 4000 l/cm, thus providing an important alternative material system in the mid-infrared wavelength range. We also study the TE and TM gain as functions of doping level and intrinsic electron-hole density.

Optical characterization of Nd (3+):AgBr.

PubMed

Bunimovich, D; Nagli, L; Katzir, A

1997-10-20

The luminescence of silver bromide crystals, doped with neodymium, was investigated over the visible and near-infrared spectral ranges. The emission, excitation, and absorption spectra were measured over a broad temperature range. The absolute luminescence quantum yield was estimated by comparing the luminescence with that of a neodymium-doped phosphate glass, for which the manufacturer gives a value of 0.4. The Judd-Ofelt analysis was applied to both materials, and transition rates, branching ratios, and quantum efficiencies were calculated for all the observed bands. Good agreement was obtained between theory and experiment.

Dielectric properties and activation behavior of gadolinium doped nanocrystalline yttrium chromite

NASA Astrophysics Data System (ADS)

Sinha, R.; Basu, S.; Meikap, A. K.

2018-04-01

Gadolinium doped Yttrium Chromite nanoparticles are synthesized following sol-gel method. The formation of the nanoparticles are confirmed by XRD and TEM measurements. Dielectric permittivity and dielectric loss are estimated within the temperature range 298K to 523K and in the frequency range 20 Hz to 1 MHz. Dielectric permittivity follows the power law ɛ'(f) ∝ Tm. It is observed that the temperature exponent m increases with the decreasing frequency. The temperature variation of resistivity shows that the samples have semiconducting behavior. The activation energy is also measured.

Theoretical study of ozone adsorption on the surface of Fe, Co and Ni doped boron nitride nanosheets

NASA Astrophysics Data System (ADS)

Farmanzadeh, Davood; Askari Ardehjani, Nastaran

2018-06-01

In this work, the adsorption of ozone molecule on Fe, Co and Ni doped boron nitride nanosheets (BNNSs) were investigated using density functional theory. The most stable adsorption configurations, charge transfer and adsorption energy of ozone molecule on pure and doped BNNSs are calculated. It is shown that ozone molecule has no remarkable interaction with pure boron nitride nanosheet, it tends to be chemisorbed on Fe, Co and Ni doped BNNSs with adsorption energy in the range of -249.4 to -686.1 kJ/mol. In all configurations, the adsorption of ozone molecule generates a semiconductor by reducing Eg in the pure and Fe, Co and Ni doped boron nitride nanosheet. It shows that the conductance of BNNSs change over the adsorption of ozone molecule. The obtained results in this study can be used in developing BN-based sheets for ozone molecule removal.

Plasmon-polaritonic bands in sequential doped graphene superlattices

NASA Astrophysics Data System (ADS)

Ramos-Mendieta, Felipe; Palomino-Ovando, Martha; Hernández-López, Alejandro; Fuentecilla-Cárcamo, Iván

Doped graphene has the extraordinary quality of supporting two types of surface excitations that involve electric charges (the transverse magnetic surface plasmons) or electric currents (the transverse electric modes). We have studied numerically the collective modes that result from the coupling of surface plasmons in doped graphene multilayers. By use of structured supercells with fixed dielectric background and inter layer separation, we found a series of plasmon-polaritonic bands of structure dependent on the doping sequence chosen for the graphene sheets. Periodic and quasiperiodic sequences for the graphene chemical potential have been studied. Our results show that transverse magnetic bands exist only in the low frequency regime but transverse electric bands arise within specific ranges of higher frequencies. Our calculations are valid for THz frequencies and graphene sheets with doping levels between 0.1 eV and 1.2 eV have been considered. AHL and IFC aknowledge fellowship support from CONACYT México.

Investigation by Monte Carlo simulation of substitution doping in the Double Perovskite Sr2CrRe1-xWxO6

NASA Astrophysics Data System (ADS)

El Rhazouani, O.; Benyoussef, A.

2018-01-01

Re-substitution doping by W has been investigated in the Double Perovskite (DP) Sr2CrRe1-xWxO6 for x ranging from 10 to 90% by using a Monte Carlo Simulation (MCS) in the framework of Ising model. Exchange couplings used in the simulation have been approximated in previous work for experimental Curie temperatures (TC). Doping effect on: partial and total magnetization, magnetic susceptibility, internal energy, specific heat, and Curie temperature has been studied. A sharp drop of partial magnetizations at 40% of W-concentration has been noticed at the magnetic transition. Apparition of a non-monotonic behavior of the total magnetization at 20% of W-concentration. Effect of doping on the stability of the compound has been emphasized. A quasilinear decrease of TC has been observed by increasing the concentration percentage of substitution doping by W.

XPS studies of nitrogen doping niobium used for accelerator applications

NASA Astrophysics Data System (ADS)

Yang, Ziqin; Lu, Xiangyang; Tan, Weiwei; Zhao, Jifei; Yang, Deyu; Yang, Yujia; He, Yuan; Zhou, Kui

2018-05-01

Nitrogen doping study on niobium (Nb) samples used for the fabrication of superconducting radio frequency (SRF) cavities was carried out. The samples' surface treatment was attempted to replicate that of the Nb SRF cavities, which includes heavy electropolishing (EP), nitrogen doping and the subsequent EP with different amounts of material removal. The surface chemical composition of Nb samples with different post treatments has been studied by XPS. The chemical composition of Nb, O, C and N was presented before and after Gas Cluster Ion Beam (GCIB) etching. No signals of poorly superconducting nitrides NbNx was found on the surface of any doped Nb sample with the 2/6 recipe before GCIB etching. However, in the depth range greater than 30 nm, the content of N element is below the XPS detection precision scope even for the Nb sample directly after nitrogen doping treatment with the 2/6 recipe.

Understanding the interactions of CO 2 with doped and undoped SrTiO 3

DOE PAGES

Wu, Qiyuan; Cen, Jiajie; Goodman, Kenneth R.; ...

2016-06-17

SrTiO 3 and doped SrTiO 3 have a wide range of applications in different fields. For example, Rh-doped SrTiO 3 has been shown to have photocatalytic activity for both hydrogen production and CO 2 conversion. In this study, both undoped and Rh-doped SrTiO 3 were synthesized by hydrothermal and polymerizable complex methods. Different characterizations techniques including X-ray photoelectron spectroscopy (XPS), XRD, Raman, and UV/Vis spectroscopy were utilized to establish correlations between the preparation methods and the electronic/structural properties of Rh-doped SrTiO 3. The presence of dopants and oxygen vacancies substantially influenced the CO 2 interactions with the surface, as revealedmore » by the in situ infrared spectroscopic study. As a result, the presence of distinctly different adsorption sites was correlated to oxygen vacancies and oxidation states of Ti and Rh.« less

Potassium-doped zinc oxide as photocathode material in dye-sensitized solar cells.

PubMed

Bai, Jie; Xu, Xiaobao; Xu, Ling; Cui, Jin; Huang, Dekang; Chen, Wei; Cheng, Yibing; Shen, Yan; Wang, Mingkui

2013-04-01

ZnO nanoparticles are doped with K and applied in p-type dye-sensitized solar cells (DSCs). The microstructure and dynamics of hole transportation and recombination are investigated. The morphology of the K-doped ZnO nanoparticles shows a homogeneous distribution with sizes in the range 30-40 nm. When applied in p-type DSCs in combination with C343 as sensitizer, the K-doped ZnO nanoparticles achieve a photovoltaic power conversion efficiency of 0.012 % at full-intensity sunlight. A further study on the device by transient photovoltage/photocurrent decay measurements shows that the K-doped ZnO nanoparticles have an appreciable hole diffusion coefficient (ca. 10(-6) cm(2) s(-1) ). Compared to the widely used p-type NiO nanoparticles, this advantage is crucial for further improving the efficiency of p-type DSCs. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Low-temperature thermoelectric power factor enhancement by controlling nanoparticle size distribution.

PubMed

Zebarjadi, Mona; Esfarjani, Keivan; Bian, Zhixi; Shakouri, Ali

2011-01-12

Coherent potential approximation is used to study the effect of adding doped spherical nanoparticles inside a host matrix on the thermoelectric properties. This takes into account electron multiple scatterings that are important in samples with relatively high volume fraction of nanoparticles (>1%). We show that with large fraction of uniform small size nanoparticles (∼1 nm), the power factor can be enhanced significantly. The improvement could be large (up to 450% for GaAs) especially at low temperatures when the mobility is limited by impurity or nanoparticle scattering. The advantage of doping via embedded nanoparticles compared to the conventional shallow impurities is quantified. At the optimum thermoelectric power factor, the electrical conductivity of the nanoparticle-doped material is larger than that of impurity-doped one at the studied temperature range (50-500 K) whereas the Seebeck coefficient of the nanoparticle doped material is enhanced only at low temperatures (∼50 K).

Photocatalysis using a Wide Range of the Visible Light Spectrum: Hydrogen Evolution from Doped AgGaS2.

PubMed

Yamato, Kohei; Iwase, Akihide; Kudo, Akihiko

2015-09-07

Doping of nickel into AgGaS2 yields a new absorption band, at a wavelength longer than the intrinsic absorption band of the AgGaS2 host. The doped nickel forms an electron donor level in a forbidden band of AgGaS2 . The nickel-doped AgGaS2 with rhodium co-catalyst shows photocatalytic activity for sacrificial H2 evolution under the light of up to 760 nm due to the transition from the electron donor level consisting of Ni(2+) to the conduction band of AgGaS2 . Apparent quantum yields for the sacrificial H2 evolution at 540-620 nm are about 1 %. Moreover, the nickel-doped AgGa0.75 In0.25 S2 also responds to near-IR light, up to 900 nm. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Room temperature ferromagnetism in Fe-doped semiconductor ZrS2 single crystals

NASA Astrophysics Data System (ADS)

Muhammad, Zahir; Lv, Haifeng; Wu, Chuanqiang; Habib, Muhammad; Rehman, Zia ur; Khan, Rashid; Chen, Shuangming; Wu, Xiaojun; Song, Li

2018-04-01

Two dimensional (2D) layered magnetic materials have obtained much attention due to their intriguing properties with a potential application in the field of spintronics. Herein, room-temperature ferromagnetism with 0.2 emu g‑1 magnetic moment is realized in Fe-doped ZrS2 single crystals of millimeter size, in comparison with diamagnetic behaviour in ZrS2. The electron paramagnetic resonance spectroscopy reveals that 5.2wt% Fe-doping ZrS2 crystal exhibit high spin value of g-factor about 3.57 at room temperature also confirmed this evidence, due to the unpaired electrons created by doped Fe atoms. First principle static electronic and magnetic calculations further confirm the increased stability of long range ferromagnetic ordering and enhanced magnetic moment in Fe-doped ZrS2, originating from the Fe spin polarized electron near the Fermi level.

S-Doped Sb2O3 Nanocrystal: an Efficient Visible-Light Catalyst for Organic Degradation

NASA Astrophysics Data System (ADS)

Xue, Hun; Lin, Xinyi; Chen, Qinghua; Qian, Qingrong; Lin, Suying; Zhang, Xiaoyan; Yang, Da-Peng; Xiao, Liren

2018-04-01

The S-doped Sb2O3 nanocrystals were successfully synthesized using SbCl3 and thioacetamide (TAA) as precursors via a facile one-step hydrothermal method. The effects of pH of the precursor reaction solution on the product composition and property were determined. The results indicated that the doping amount of S could be tuned by adjusting the pH of the precursor solution. Furthermore, the S entered into the interstitial site of Sb2O3 crystals as S2-, which broadened the absorption wavelength range of the Sb2O3 nanocrystal. The S-doped Sb2O3 exhibited an excellent visible-light-driven photocatalytic activity in the decomposition of methyl orange and 4-phenylazophenol. Last, a possible photocatalytic mechanism of the S-doped Sb2O3 under visible light irradiation was proposed.

Study of A-site doping of SrBi4Ti4O15 Bi-layered compounds using micro-Raman spectroscopy

NASA Astrophysics Data System (ADS)

Hao, H.; Liu, H. X.; Cao, M. H.; Min, X. M.; Ouyang, S. X.

2006-10-01

The temperature-dependent Raman spectra of Mg- and La-doped SrBi4Ti4O15 (SBT) were studied in the range 40 590 °C. A quantum chemistry calculation was employed to estimate these two substitution states. It was found that A-site doping in this study not only caused multiplicative substitution states, but also the Raman spectra changed with the substitution amount. In a La-doped perovskite-like layer, La would occupy the Bi site when x>0.10 and the 314 and 550 cm-1 modes related to the rotating and tilting of the TiO6 octahedron firstly became wide and then became sharp. With the increase of the substitution amount, both substitution states of Mg-doped SBT lead to the widening of 270 and 520 cm-1 peaks.

Quasiparticle mass enhancement approaching optimal doping in a high-T c superconductor

DOE PAGES

Ramshaw, B. J.; Sebastian, S. E.; McDonald, R. D.; ...

2015-03-26

In the quest for superconductors with higher transition temperatures (T c), one emerging motif is that electronic interactions favorable for superconductivity can be enhanced by fluctuations of a broken-symmetry phase. In recent experiments it is suggested that the existence of the requisite broken-symmetry phase in the high-T c cuprates, but the impact of such a phase on the ground-state electronic interactions has remained unclear. Here, we used magnetic fields exceeding 90 tesla to access the underlying metallic state of the cuprate YBa 2Cu 3O 6+δ over a wide range of doping, and observed magnetic quantum oscillations that reveal a strongmore » enhancement of the quasiparticle effective mass toward optimal doping. Finally, this mass enhancement results from increasing electronic interactions approaching optimal doping, and suggests a quantum critical point at a hole doping of p crit ≈ 0.18.« less

Quasiparticle mass enhancement approaching optimal doping in a high-T c superconductor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ramshaw, B. J.; Sebastian, S. E.; McDonald, R. D.

In the quest for superconductors with higher transition temperatures (T c), one emerging motif is that electronic interactions favorable for superconductivity can be enhanced by fluctuations of a broken-symmetry phase. In recent experiments it is suggested that the existence of the requisite broken-symmetry phase in the high-T c cuprates, but the impact of such a phase on the ground-state electronic interactions has remained unclear. Here, we used magnetic fields exceeding 90 tesla to access the underlying metallic state of the cuprate YBa 2Cu 3O 6+δ over a wide range of doping, and observed magnetic quantum oscillations that reveal a strongmore » enhancement of the quasiparticle effective mass toward optimal doping. Finally, this mass enhancement results from increasing electronic interactions approaching optimal doping, and suggests a quantum critical point at a hole doping of p crit ≈ 0.18.« less

Pulsed laser induced optical nonlinearities in undoped, copper doped and chromium doped CdS quantum dots

NASA Astrophysics Data System (ADS)

Sharma, Dimple; Malik, B. P.; Gaur, Arun

2015-04-01

Quantum dots (QDs) of CdS, Cu doped and Cr doped CdS were synthesized through chemical co- precipitation method. The synthesized QDs have been characterized by x-ray diffraction, ultraviolet visible absorption spectroscopy. The diameters of QDs were calculated using Debye-Scherrer’s formula and Brus equation. They are found to be in 3.5-3.8 nm range. The nonlinear properties has been studied by the open and closed aperture Z-scan technique using frequency double Nd:YAG laser. The nonlinear refractive index (n2), nonlinear absorption coefficient (β), third order nonlinear susceptibilities (χ3) of QDs has been calculated. It has been found that the values of nonlinear parameters are higher for doped QDs than undoped CdS QDs. Hence they can be regarded as potential material for the development of optoelectronics and photonics devices.

Superconductivity. Quasiparticle mass enhancement approaching optimal doping in a high-T(c) superconductor.

PubMed

Ramshaw, B J; Sebastian, S E; McDonald, R D; Day, James; Tan, B S; Zhu, Z; Betts, J B; Liang, Ruixing; Bonn, D A; Hardy, W N; Harrison, N

2015-04-17

In the quest for superconductors with higher transition temperatures (T(c)), one emerging motif is that electronic interactions favorable for superconductivity can be enhanced by fluctuations of a broken-symmetry phase. Recent experiments have suggested the existence of the requisite broken-symmetry phase in the high-T(c) cuprates, but the impact of such a phase on the ground-state electronic interactions has remained unclear. We used magnetic fields exceeding 90 tesla to access the underlying metallic state of the cuprate YBa2Cu3O(6+δ) over a wide range of doping, and observed magnetic quantum oscillations that reveal a strong enhancement of the quasiparticle effective mass toward optimal doping. This mass enhancement results from increasing electronic interactions approaching optimal doping, and suggests a quantum critical point at a hole doping of p(crit) ≈ 0.18. Copyright © 2015, American Association for the Advancement of Science.

Infrared photorefractive effect in doped KNbO3 crystals

NASA Astrophysics Data System (ADS)

Medrano, C.; Zgonik, M.; Liakatas, I.; Günter, P.

1996-11-01

The photorefractive sensitivity of potassium niobate crystals doped with Ce, Co, Cu, Fe, Mn, Ni, and Rh and double-doped with Mn and Rh is investigated over an extended spectral range. We present experimental evidence on extrinsic properties important for the photorefractive effect, such as absorption and effective trap density. Photorefractive gratings are investigated with two-wave mixing experiments. Results on exponential gain, response time, and photorefractive sensitivity at near-infrared wavelengths are reported. The best photorefractive sensitivities at 860 and 1064 nm were obtained in crystals doped with Rh, Fe, Mn, and Mn-Rh. This makes them suitable for applications at laser-diode wavelengths; at 1064 nm, however, Rh:KNbO3 shows a better photorefractive sensitivity than the others. .

The magnetic ordering in high magnetoresistance Mn-doped ZnO thin films

DOE PAGES

Venkatesh, S.; Baras, A.; Lee, J. -S.; ...

2016-03-24

Here, we studied the nature of magnetic ordering in Mn-doped ZnO thin films that exhibited ferromagnetism at 300 K and superparamagnetism at 5 K. We directly inter-related the magnetisation and magnetoresistance by invoking the polaronpercolation theory and variable range of hopping conduction below the metal-to-insulator transition. By obtaining a qualitative agreement between these two models, we attribute the ferromagnetism to the s-d exchange-induced spin splitting that was indicated by large positive magnetoresistance (~40 %). Low temperature superparamagnetism was attributed to the localization of carriers and non-interacting polaron clusters. This analysis can assist in understanding the presence or absence of ferromagnetismmore » in doped/un-doped ZnO.« less

Recent Advances of Rare-Earth Ion Doped Luminescent Nanomaterials in Perovskite Solar Cells

PubMed Central

Qiao, Yu; Li, Shuhan; Liu, Wenhui; Ran, Meiqing; Lu, Haifei

2018-01-01

Organic-inorganic lead halide based perovskite solar cells have received broad interest due to their merits of low fabrication cost, a low temperature solution process, and high energy conversion efficiencies. Rare-earth (RE) ion doped nanomaterials can be used in perovskite solar cells to expand the range of absorption spectra and improve the stability due to its upconversion and downconversion effect. This article reviews recent progress in using RE-ion-doped nanomaterials in mesoporous electrodes, perovskite active layers, and as an external function layer of perovskite solar cells. Finally, we discuss the challenges facing the effective use of RE-ion-doped nanomaterials in perovskite solar cells and present some prospects for future research. PMID:29342950

Optical spectroscopy of disordered Ca3Ga2Ge4O14 crystal doped with manganese

NASA Astrophysics Data System (ADS)

Burkov, Vladimir; Alyabyeva, Liudmila; Mill, Boris; Kotov, Viacheslav

2018-05-01

Circular dichroism, absorption and luminescence spectra of single crystalline manganese doped calcium gallogermanate Ca3Ga2Ge4O14:Mn were investigated in 300-850 nm wavelength region in wide temperature range 8-300 K. Careful analysis of experimental results revealed presence of electron transitions typical for sixfold coordinated trivalent manganese ions with d4 electron configuration. Thus, manganese ions doping the crystal matrix of CCG incorporate into lattice in 1a octahedral site-positions substituting Ga3+ ions. The results obtained were compared with investigation of isostructural to CGG manganese doped langasite crystals, La3Ga5SiO14:Mn where dopant is in octahedral Mn4+ state.

Electronic structure modifications and band gap narrowing in Zn0.95V0.05O

NASA Astrophysics Data System (ADS)

Ahad, Abdul; Majid, S. S.; Rahman, F.; Shukla, D. K.; Phase, D. M.

2018-04-01

We present here, structural, optical and electronic structure studies on Zn0.95V0.05O, synthesized using solid state method. Rietveld refinement of x-ray diffraction pattern indicates no considerable change in the lattice of doped ZnO. The band gap of doped sample, as calculated by Kubelka-Munk transformed reflectance spectra, has been found reduced compared to pure ZnO. Considerable changes in absorbance in UV-Vis range is observed in doped sample. V doping induced decrease in band gap is supported by x-ray absorption spectroscopy measurements. It is experimentally confirmed that conduction band edge in Zn0.95V0.05O has shifted towards Fermi level than in pure ZnO.

Metal to insulator transition in Sb doped SnO2 monocrystalline nanowires thin films

NASA Astrophysics Data System (ADS)

Costa, I. M.; Bernardo, E. P.; Marangoni, B. S.; Leite, E. R.; Chiquito, A. J.

2016-12-01

We report on the growth and transport properties of single crystalline Sb doped SnO2 wires grown from chemical vapour deposition. While undoped samples presented semiconducting behaviour, doped ones clearly undergo a transition from an insulating state ( d R /d T <0 ) to a metallic one ( d R /d T >0 ) around 130 -150 K depending on the doping level. Data analysis in the framework of the metal-to-insulator transition theories allowed us to investigate the underlying physics: electron-electron and electron-phonon interactions were identified as the scattering mechanisms present in the metallic phase, while the conduction mechanism of the semiconducting phase (undoped sample) was characterized by thermal activation and variable range hopping mechanisms.

Superconductivity, pairing symmetry, and disorder in the doped topological insulator Sn1 -xInxTe for x ≥0.10

NASA Astrophysics Data System (ADS)

Smylie, M. P.; Claus, H.; Kwok, W.-K.; Louden, E. R.; Eskildsen, M. R.; Sefat, A. S.; Zhong, R. D.; Schneeloch, J.; Gu, G. D.; Bokari, E.; Niraula, P. M.; Kayani, A.; Dewhurst, C. D.; Snezhko, A.; Welp, U.

2018-01-01

The temperature dependence of the London penetration depth Δ λ (T ) in the superconducting doped topological crystalline insulator Sn1 -xInxTe was measured down to 450 mK for two different doping levels, x ≈0.45 (optimally doped) and x ≈0.10 (underdoped), bookending the range of cubic phase in the compound. The results indicate no deviation from fully gapped BCS-like behavior, eliminating several candidate unconventional gap structures. Critical field values below 1 K and other superconducting parameters are also presented. The introduction of disorder by repeated particle irradiation with 5 MeV protons does not enhance Tc, indicating that ferroelectric interactions do not compete with superconductivity.

Effect of carrier doping and external electric field on the optical properties of graphene quantum dots

NASA Astrophysics Data System (ADS)

Basak, Tista; Basak, Tushima

2018-02-01

In this paper, we demonstrate that the optical properties of finite-sized graphene quantum dots can be effectively controlled by doping it with different types of charge carriers (electron/hole). In addition, the role played by a suitably directed external electric field on the optical absorption of charge-doped graphene quantum dots have also been elucidated. The computations have been performed on diamond-shaped graphene quantum dot (DQD) within the framework of the Pariser-Parr-Pople (PPP) model Hamiltonian, which takes into account long-range Coulomb interactions. Our results reveal that the energy band-gap increases when the DQD is doped with holes while it decreases on doping it with electrons. Further, the optical absorption spectra of DQD exhibits red/blue-shift on doping with electrons/holes. Our computations also indicate that the application of external transverse electric field results in a substantial blue-shift of the optical spectrum for charge-doped DQD. However, it is observed that the influence of charge-doping is more prominent in tuning the optical properties of finite-sized graphene quantum dots as compared to externally applied electric field. Thus, tailoring the optical properties of finite-sized graphene quantum dots by manipulative doping with charge carriers and suitably aligned external electric field can greatly enhance its potential application in designing nano-photonic devices.

Room temperature ferromagnetism in Fe-doped CuO nanoparticles.

PubMed

Layek, Samar; Verma, H C

2013-03-01

The pure and Fe-doped CuO nanoparticles of the series Cu(1-x)Fe(x)O (x = 0.00, 0.02, 0.04, 0.06 and 0.08) were successfully prepared by a simple low temperature sol-gel method using metal nitrates and citric acid. Rietveld refinement of the X-ray diffraction data showed that all the samples were single phase crystallized in monoclinic structure of space group C2/c with average crystallite size of about 25 nm and unit cell volume decreases with increasing iron doping concentration. TEM micrograph showed nearly spherical shaped agglomerated particles of 4% Fe-doped CuO with average diameter 26 nm. Pure CuO showed weak ferromagnetic behavior at room temperature with coercive field of 67 Oe. The ferromagnetic properties were greatly enhanced with Fe-doping in the CuO matrix. All the doped samples showed ferromagnetism at room temperature with a noticeable coercive field. Saturation magnetization increases with increasing Fe-doping, becomes highest for 4% doping then decreases for further doping which confirms that the ferromagnetism in these nanoparticles are intrinsic and are not resulting from any impurity phases. The ZFC and FC branches of the temperature dependent magnetization (measured in the range of 10-350 K by SQUID magnetometer) look like typical ferromagnetic nanoparticles and indicates that the ferromagnetic Curie temperature is above 350 K.

Highly conducting and crystalline doubly doped tin oxide films fabricated using a low-cost and simplified spray technique

NASA Astrophysics Data System (ADS)

Ravichandran, K.; Muruganantham, G.; Sakthivel, B.

2009-11-01

Doubly doped (simultaneous doping of antimony and fluorine) tin oxide films (SnO 2:Sb:F) have been fabricated by employing an inexpensive and simplified spray technique using perfume atomizer from aqueous solution of SnCl 2 precursor. The structural studies revealed that the films are highly crystalline in nature with preferential orientation along the (2 0 0) plane. It is found that the size of the crystallites of the doubly doped tin oxide films is larger (69 nm) than that (27 nm) of their undoped counterparts. The dislocation density of the doubly doped film is lesser (2.08×10 14 lines/m 2) when compared with that of the undoped film (13.2×10 14 lines/m 2), indicating the higher degree of crystallinity of the doubly doped films. The SEM images depict that the films are homogeneous and uniform. The optical transmittance in the visible range and the optical band gap of the doubly doped films are 71% and 3.56 eV respectively. The sheet resistance (4.13 Ω/□) attained for the doubly doped film in this study is lower than the values reported for spray deposited fluorine or antimony doped tin oxide films prepared from aqueous solution of SnCl 2 precursor (without using methanol or ethanol).

The structural and optical properties of Y (Y  =  Al, B, Si and Ti)-doped ZnO nano thin films from the first principles calculations

NASA Astrophysics Data System (ADS)

Zhang, Wenshu; Hu, Huijun; Zhang, Caili; Li, Jianguo; Li, Yuping; Ling, Lixia; Han, Peide

2017-12-01

Based on the density functional theory, the structural stability and optical properties of undoped and Y (Y  =  Al, B, Si and Ti)-doped ZnO nano thin films are investigated. The good stability of the films based on the ZnO (0 0 0 1) can be obtained when the layer is larger than 12. Moreover, the dielectric function, refractive index, absorption, and reflectivity of doped ZnO nano thin films have been analyzed in detail. In the visible light range, the values of ZnO films from 12 to 24 layers are all smaller than those of the bulk. And with the augment of the layers, the values keep increasing. All the results signify that the nano film of 12 layers possesses the lowest reflectivity and weakest absorption. In addition, there is an evident impact of some doped element on the properties of nano films. The absorption and reflectivity of Ti, Si-doped ZnO nano thin films are higher than those of the clean films, while Al, B-doped are lower, especially B-doped. Moreover, the conductivity of the doped structure is better than that of the bulk. Thus, the B-doped ZnO nano thin films could be potential candidate materials of transparent conductive films.

Comparative studies of the structure, morphology and electrical conductivity of polyaniline weakly doped with chlorocarboxylic acids

NASA Astrophysics Data System (ADS)

Gmati, Fethi; Fattoum, Arbi; Bohli, Nadra; Dhaoui, Wadia; Belhadj Mohamed, Abdellatif

2007-08-01

We report the results of studies on two series of polyaniline (PANI), doped with dichloroacetic (DCA) and trichloroacetic (TCA) acids, respectively, at various doping rates and obtained by the in situ polymerization method. Samples were characterized by x-ray diffraction, scanning electron microscopy and conductivity measurements. The direct current (dc) and alternating current (ac) electrical conductivities of PANI salts have been investigated in the temperature range 100-310 K and frequency range 7-106 Hz. The results of this study indicate better chain ordering and higher conductivity for PANI doped with TCA. The dc conductivity of all samples is suitably fitted to Mott's three-dimensional variable-range hopping (VRH) model. Different Mott parameters such as characteristic temperature T0, density of states at the Fermi level (N(EF)), average hopping energy (W) and the average hopping distance (R) have been evaluated. The dependence of such values on the dopant acid used is discussed. At high frequencies, the ac conductivity follows the power law σac(ω,T) = A(T)ωs(T,ω), which is characteristic for charge transport in disordered materials by hopping or tunnelling processes. The observed increase in the frequency exponent s with temperature suggests that the small-polaron tunnelling model best describes the dominant ac conduction mechanism. A direct correlation between conductivity, structure and morphology was obtained in our systems.

Tunable narrow linewidth all-fiber thulium-doped fiber laser in a 2 µm-band using two Hi-Bi fiber optical loop mirrors

NASA Astrophysics Data System (ADS)

Posada-Ramírez, B.; Durán-Sánchez, M.; Álvarez-Tamayo, R. I.; Ibarra-Escamilla, B.; Hernández-Arriaga, M. V.; Sánchez-de-la-Llave, D.; Kuzin, E. A.

2017-08-01

We propose an all-fiber Tm-doped fiber laser with a tunable and narrow laser line generated in a wavelength region of 2 µm. A single laser line with a linewidth below 0.05 nm, tunable in a wavelength range of 44.25 nm, is obtained. The laser linewidth and the discrete wavelength tuning range depend on the characteristics of the two fiber optical loop mirrors with high birefringence in the loop that forms the cavity. Dual-wavelength laser operation is also observed at tuning range limits with a wavelength separation of 47 nm. Alternate wavelength switching is also observed.

Electron and photon degradation in aluminum, gallium and boron doped float zone silicon solar cells

NASA Technical Reports Server (NTRS)

Rahilly, W. P.; Scott-Monck, J.; Anspaugh, B.; Locker, D.

1976-01-01

Solar cells fabricated from Al, Ga and B doped Lopex silicon over a range of resistivities were tested under varying conditions of 1 MeV electron fluence, light exposures and thermal cycling. Results indicate that Al and Ga can replace B as a P type dopant to yield improved solar cell performance.

Growth, structural, spectroscopic, thermal, dielectric and optical study of cobalt sulphide-doped ADP crystals

NASA Astrophysics Data System (ADS)

Kochuparampil, A. P.; Joshi, J. H.; Joshi, M. J.

2017-09-01

As ammonium dihydrogen phosphate (ADP) is a popular nonlinear optical crystal, to engineer its linear and nonlinear optical properties, the chalcogenide compound cobalt sulphide (CoS) was doped and the crystals were grown by the slow solvent evaporation method. To increase the solubility of CoS in water, its nanoparticles were synthesized by wet chemical technique using ethylene diamine as the capping agent followed by microwave irradiation. The nanoparticle sample exhibited finite solubility in water and was used to dope in ADP crystals. The powder XRD patterns showed the single phase nature of the doped crystals. The FTIR spectra confirmed the presence of various functional groups and EDAX gave the estimation of Co and S elements. The EPR spectroscopy also confirmed the presence of cobalt in the doped samples. TGA indicated slightly less thermal stability of the doped crystals compared to the pure ADP. The dielectric study was carried out at room temperature in the frequency range from 100Hz to 1MHz. Also, various linear optical parameters were evaluated for pure and doped crystals using UV-Vis spectroscopy. The second harmonic generation (SHG) efficiency of Nd:YAG laser was evaluated by the Kurtz and Parry method for the doped samples, it was found to be slightly lesser than that of the pure ADP crystals.

Impact of carrier doping on electrical properties of laser-induced liquid-phase-crystallized silicon thin films for solar cell application

NASA Astrophysics Data System (ADS)

Umishio, Hiroshi; Matsui, Takuya; Sai, Hitoshi; Sakurai, Takeaki; Matsubara, Koji

2018-02-01

Large-grain-size (>1 mm) liquid-phase-crystallized silicon (LPC-Si) films with a wide range of carrier doping levels (1016-1018 cm-3 either of the n- or p-type) were prepared by irradiating amorphous silicon with a line-shaped 804 nm laser, and characterized for solar cell applications. The LPC-Si films show high electron and hole mobilities with maximum values of ˜800 and ˜200 cm2 V-1 s-1, respectively, at a doping level of ˜(2-4) × 1016 cm-3, while their carrier lifetime monotonically increases with decreasing carrier doping level. A grain-boundary charge-trapping model provides good fits to the measured mobility-carrier density relations, indicating that the potential barrier at the grain boundaries limits the carrier transport in the lowly doped films. The open-circuit voltage and short-circuit current density of test LPC-Si solar cells depend strongly on the doping level, peaking at (2-5) × 1016 cm-3. These results indicate that the solar cell performance is governed by the minority carrier diffusion length for the highly doped films, while it is limited by majority carrier transport as well as by device design for the lowly doped films.

Thermally evaporated mechanically hard tin oxide thin films for opto-electronic apllications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tripathy, Sumanta K.; Rajeswari, V. P.

2014-01-28

Tungsten doped tin oxide (WTO) and Molybdenum doped tin oxide (MoTO) thin film were deposited on corn glass by thermal evaporation method. The films were annealed at 350°C for one hour. Structural analysis using Xray diffraction data shows both the films are polycrystalline in nature with monoclinic structure of tin oxide, Sn{sub 3}O{sub 4}, corresponding to JCPDS card number 01-078-6064. SEM photograph showed that both the films have spherical grains with size in the range of 20–30 nm. Compositional analysis was carried out using EDS which reveals the presence of Sn, O and the dopant Mo/W only thereby indicating themore » absence of any secondary phase in the films. The films are found to contain nearly 6 wt% of Mo, 8 wt% of W as dopants respectively. The transmission pattern for both the films in the spectral range 200 – 2000 nm shows that W doping gives a transparency of nearly 80% from 380 nm onwards while Mo doping has less transparency of 39% at 380nm. Film hardness measurement using Triboscope shows a film hardness of about 9–10 GPa for both the films. It indicates that W or M doping in tin oxide provides the films the added advantage of withstanding the mechanical wear and tear due to environmental fluctuations By optimizing the optical and electrical properties, W/Mo doped tin oxide films may be explored as window layers in opto-electronic applications such as solar cells.« less

Evaluation of the Mg doping approach for Si mass fractionation correction on Nu Instruments MC-ICP Mass Spectrometers

NASA Astrophysics Data System (ADS)

Zhao, Ye; Hsieh, Yu-Te; Belshaw, Nick

2015-04-01

Silicon (Si) stable isotopes have been used in a broad range of geochemical and cosmochemical applications. A precise and accurate determination of Si isotopes is desirable to distinguish their small natural variations (< 0.2‰) in many of these studies. In the past decade, the advent of the MC-ICP-MS has spurred a remarkable improvement in the precision and accuracy of Si isotopic analysis. The instrumental mass fractionation correction is one crucial aspect of the analysis of Si isotopes. Two options are currently available: the sample-standard bracketing approach and the Mg doping approach. However, there has been a debate over the validity of the Mg doping approach. Some studies (Cardinal et al., 2003; Engström et al., 2006) favoured it compared to the sample-standard bracketing approach, whereas some other studies (e.g. De La Rocha, 2002) considered it unsuitable. This study investigates the Mg doping approach on both the Nu Plasma II and the Nu Plasma 1700. Experiments were performed in both the wet plasma and the dry plasma modes, using a number of different combinations of cones. A range of different Mg to Si ratios as well as different matrices have been used in the experiments. A sample-standard bracketing approach has also been adopted for the Si mass fractionation correction to compare with the Mg doping approach. Through assessing the mass fractionation behaviours of both Si and Mg under different instrument settings, this study aims to identity the factors which may affect the Mg doping approach and answer some key questions to the debate.

Highly fluorescent Zn-doped carbon dots as Fenton reaction-based bio-sensors: an integrative experimental-theoretical consideration.

PubMed

Xu, Quan; Liu, Yao; Su, Rigu; Cai, Lulu; Li, Bofan; Zhang, Yingyuan; Zhang, Linzhou; Wang, Yajun; Wang, Yan; Li, Neng; Gong, Xiao; Gu, Zhipeng; Chen, Yusheng; Tan, Yanglan; Dong, Chenbo; Sreeprasad, Theruvakkattil Sreenivasan

2016-10-20

Heteroatom doped carbon dots (CDs), with high photoluminescence quantum yield (PLQY), are of keen interest in various applications such as chemical sensors, bio-imaging, electronics, and photovoltaics. Zinc, an important element assisting the electron-transfer process and an essential trace element for cells, is a promising metal dopant for CDs, which could potentially lead to multifunctional CDs. In this contribution, we report a single-step, high efficiency, hydrothermal method to synthesize Zn-doped carbon dots (Zn-CDs) with a superior PLQY. The PLQY and luminescence characteristic of Zn-CDs can be tuned by controlling the precursor ratio, and the surface oxidation in the CDs. Though a few studies have reported metal doped CDs with good PLQY, the as prepared Zn-Cds in the present method exhibited a PLQY up to 32.3%. To the best of our knowledge, there is no report regarding the facile preparation of single metal-doped CDs with a QY more than 30%. Another unique attribute of the Zn-CDs is the high monodispersity and the resultant highly robust excitation-independent luminescence that is stable over a broad range of pH values. Spectroscopic investigations indicated that the superior PLQY and luminescence of Zn-CDs are due to the heteroatom directed, oxidized carbon-based surface passivation. Furthermore, we developed a novel and sensitive biosensor for the detection of hydrogen peroxide and glucose leveraging the robust fluorescence properties of Zn-CDs. Under optimal conditions, Zn-CDs demonstrated high sensitivity and response to hydrogen peroxide and glucose over a wide range of concentrations, with a linear range of 10-80 μM and 5-100 μM, respectively, indicating their great potential as a fluorescent probe for chemical sensing.

Carbon and nitrogen co-doped bowl-like Au/TiO2 nanostructures with tunable size for enhanced visible-light-driven photocatalysis

NASA Astrophysics Data System (ADS)

Li, Yayuan; Cao, Shubo; Zhang, Ang; Zhang, Chen; Qu, Ting; Zhao, Yongbin; Chen, Aihua

2018-07-01

It is of great importance to extend the UV response of anatase TiO2 into the visible light range for the practical applications. Here, a facile rout to carbon and nitrogen co-doped, Au loaded bowl-like TiO2 nanostructures with tunable size are proposed by using self-assembled polystyrene-block-poly(4-vinylpyridine) (PS-b-P4VP) block copolymer (BCP) spherical micelles as templates. Amphiphilic PS-b-P4VP self-assembles to form PS@P4VP core-shell spherical micelles with P4VP as the out layer in an evaporable mixed solvents of ethanol/tetrahydrofuran (THF). The size of uniform PS@P4VP spherical micelles can be precisely tuned in the range of a few nm to several hundred nm by controlling the molecular composition of the BCPs. Bowl-like TiO2 nanostructures with a replicate size loaded with highly dispersed Au nanoparticles (NPs) of ∼5 nm in diameter are fabricated from these spherical micelles because of strong complex ability of pyridine groups. PS-b-P4VP provides carbon and nitrogen sources to dope the resulting samples simultaneously. The special carbon and nitrogen co-doped bowl-like Au/TiO2 nanostructures exhibit much higher photocatalytic activity in the photodegradation of rhodamine B (RhB) compared to Au/P25 under visible light irradiation. Furthermore, the photocatalytic activity is significantly influenced by the BCP molecular composition due to different surface area and loading capacity of the resulting samples. This study provides a facile way to synthesize multi-element doped hollow or bowl-like nanoparticles with tunable size in the nanometer range which have potential application at photocatalysis, oxygen reduction reaction, etc.

Imposing long-range ferromagnetic order in rare-earth-doped magnetic topological-insulator heterostructures

NASA Astrophysics Data System (ADS)

Duffy, L. B.; Frisk, A.; Burn, D. M.; Steinke, N.-J.; Herrero-Martin, J.; Ernst, A.; van der Laan, G.; Hesjedal, T.

2018-05-01

The combination of topological properties and magnetic order can lead to new quantum states and exotic physical phenomena, such as the quantum anomalous Hall (QAH) effect. The size of the magnetic gap in the topological surface states, key for the robust observation of the QAH state, scales with the magnetic moment of the doped three-dimensional topological insulator (TI). The pioneering transition-metal doped (Sb,Bi ) 2(Se,Te ) 3 thin films only allow for the observation of the QAH effect up to some 100 mK, despite the much higher magnetic ordering temperatures. On the other hand, high magnetic moment materials, such as rare-earth-doped (Sb,Bi ) 2(Se,Te ) 3 thin films, show large moments but no long-range magnetic order. Proximity coupling and interfacial effects, multiplied in artificial heterostructures, allow for the engineering of the electronic and magnetic properties. Here, we show the successful growth of high-quality Dy:Bi2Te3 /Cr:Sb2Te3 thin film heterostructures. Using x-ray magnetic spectroscopy we demonstrate that high transition temperature Cr:Sb2Te3 can introduce long-range magnetic order in high-moment Dy:Bi2Te3 —up to a temperature of 17 K—in excellent agreement with first-principles calculations, which reveal the origin of the long-range magnetic order in a strong antiferromagnetic coupling between Dy and Cr magnetic moments at the interface extending over several layers. Engineered magnetic TI heterostructures may be an ideal materials platform for observing the QAH effect at liquid He temperatures and above.

Bulk growth of undoped and Nd3+ doped zinc thiourea chloride (ZTC) monocrystal: Exploring the remarkably enhanced structural, optical, electrical and mechanical performance of Nd3+ doped ZTC crystal for NLO device applications

NASA Astrophysics Data System (ADS)

Anis, Mohd; Muley, Gajanan. G.

2017-05-01

In current scenario good quality crystals are demanded for NLO device application hence present communication is aimed to grow bulk crystal and investigate the doping effect of rare earth element Nd3+ on structural, linear-nonlinear optical, luminescence, mechanical and dielectric properties of zinc thiourea chloride (ZTC) crystal. The ZTC crystal of dimension 21×10×8 mm3 and the Nd3+ doped ZTC crystal of dimension 27×17×5 mm3 have been grown from aqueous solution by slow evaporation technique. The elemental analysis of Nd3+ doped ZTC single crystal has been performed by means of energy dispersive spectroscopic technique. The powder X-ray diffraction technique has been employed to confirm the crystalline phase and identify the effect of Nd3+ doping on structural dimensions of ZTC crystal. The grown crystals have been characterized by UV-Vis-NIR study in the range of 190-1100 nm to ascertain the enhancement in optical transparency of ZTC crystal facilitated by dopant Nd3+. The recorded transmittance data has been utilized to investigate the vital optical constants of grown crystals. The second order nonlinear optical behavior of grown crystals has been evaluated by means of Kurtz-Perry test and the second harmonic generation efficiency of Nd3+ doped ZTC crystal is found to be 1.24 times higher than ZTC crystal. The luminescence analysis has been performed to examine the electronic purity and the color centered photoluminescence emission nature of pure and Nd3+ doped ZTC crystals. The influence of Nd3+ ion on mechanical behavior of ZTC crystal has been investigated by means of microhardness studies. The nature of dielectric constant and dielectric loss of pure and Nd3+ doped ZTC crystal has been examined in the range of 40-100 °C under dielectric study. The Z-scan technique has been employed using the He-Ne laser to investigate the third order nonlinear optical (TONLO) nature of Nd3+ doped ZTC single crystal. The magnitude of TONLO susceptibility, absorption coefficient and refraction has been determined using the Z-scan transmittance data.

Doping properties of cadmium-rich arsenic-doped CdTe single crystals: Evidence of metastable AX behavior

DOE PAGES

Nagaoka, Akira; Kuciauskas, Darius; Scarpulla, Michael A.

2017-12-04

Cd-rich composition and group-V element doping are of interest for simultaneously maximizing the hole concentration and minority carrier lifetime in CdTe, but the critical details concerning point defects are not yet fully established. Herein, we report on the properties of arsenic doped CdTe single crystals grown from Cd solvent by the travelling heater method. The photoluminescence spectra and activation energy of 74 +/- 2 meV derived from the temperature-dependent Hall effect are consistent with AsTe as the dominant acceptor. Doping in the 10^16 to 10^17/cm^3 range is achieved for measured As concentrations between 10^16 and 10^20/cm^3 with the highest dopingmore » efficiency of 40% occurring near 10^17 As/cm^3. We observe persistent photoconductivity, a hallmark of light-induced metastable configuration changes consistent with AX behavior. Additionally, quenching experiments reveal at least two mechanisms of increased p-type doping in the dark, one decaying over 2-3 weeks and the other persisting for at least 2 months. These results provide essential insights for the application of As-doped CdTe in thin film solar cells.« less

Doping induced c-axis oriented growth of transparent ZnO thin film

NASA Astrophysics Data System (ADS)

Mistry, Bhaumik V.; Joshi, U. S.

2018-04-01

c-Axis oriented In doped ZnO (IZO) transparent conducting thin films were optimized on glass substrate using sol gel spin coating method. The Indium content in ZnO was varied systematically and the structural parameters were studied. Along with the crystallographic properties, the optoelectronic and electrical properties of IZO thin films were investigated in detail. The IZO thin films revealed hexagonal wurtzite structure. It was found that In doping in ZnO promotes the c-axis oriented growth of the thin films deposited on amorphous substrate. The particle size of the IZO films were increase as doping content increases from 2% to 5%. The 2% In doped ZnO film show electrical resistivity of 0.11 Ω cm, which is far better than the reported value for ZnO thin film. Better than 75% average optical transmission was estimated in the wavelength range from 400-800 nm. Systematic variartions in the electron concentration and band gap was observed with increasing In doping. Note worthy finding is that, with suitable amount of In doping improves not only transparency and conductivity but also improves the preferred orientation of the oxide thin film.

Influence of a novel co-doping (Zn + F) on the physical properties of nano structured (1 1 1) oriented CdO thin films applicable for window layer of solar cell

NASA Astrophysics Data System (ADS)

Anitha, M.; Saravanakumar, K.; Anitha, N.; Amalraj, L.

2018-06-01

Un-doped and co-doped (Zn + F) cadmium oxide (CdO) thin films were prepared by modified spray pyrolysis technique using a nebulizer on glass substrates kept at 200 °C. They were characterized by X-ray diffraction (XRD), X-ray photoelectron spectra (XPS), scanning electron microscopy (SEM), UV-vis spectroscopy, Hall Effect and photoluminescence (PL) respectively. The thin films were having thickness in the range of 520-560 nm. They were well crystalline and displayed high transparency of about >70% in the visible region. It was clearly seen from the SEM photographs that co-doping causes notable changes in the surface morphology. Electrical study exhibited the resistivity of co-doped CdO thin films drastically fell to 1.43 × 10-4 Ω-cm compared with the un-doped CdO thin film. The obtained PL spectra were well corroborated with the structural and optical studies. The high transparency, wide band gap energy and enhanced electrical properties obtained infer that Zn + F co-doped CdO thin films find application in optoelectronic devices, especially in window layer of solar cells.

Doping properties of cadmium-rich arsenic-doped CdTe single crystals: Evidence of metastable AX behavior

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nagaoka, Akira; Kuciauskas, Darius; Scarpulla, Michael A.

Cd-rich composition and group-V element doping are of interest for simultaneously maximizing the hole concentration and minority carrier lifetime in CdTe, but the critical details concerning point defects are not yet fully established. Herein, we report on the properties of arsenic doped CdTe single crystals grown from Cd solvent by the travelling heater method. The photoluminescence spectra and activation energy of 74 +/- 2 meV derived from the temperature-dependent Hall effect are consistent with AsTe as the dominant acceptor. Doping in the 10^16 to 10^17/cm^3 range is achieved for measured As concentrations between 10^16 and 10^20/cm^3 with the highest dopingmore » efficiency of 40% occurring near 10^17 As/cm^3. We observe persistent photoconductivity, a hallmark of light-induced metastable configuration changes consistent with AX behavior. Additionally, quenching experiments reveal at least two mechanisms of increased p-type doping in the dark, one decaying over 2-3 weeks and the other persisting for at least 2 months. These results provide essential insights for the application of As-doped CdTe in thin film solar cells.« less

Controlling the Photocorrosion of Zinc Sulfide Nanoparticles in Water by Doping with Chloride and Cobalt Ions.

PubMed

Weide, Philipp; Schulz, Katharina; Kaluza, Stefan; Rohe, Markus; Beranek, Radim; Muhler, Martin

2016-12-06

Photodegradation under UV light irradiation is a major drawback in photocatalytic applications of sulfide semiconductors. ZnS nanoparticles were doped with very low amounts of chloride or cobalt ions in the ppm range and codoped with chloride and cobalt ions during their synthesis by precipitation in aqueous solution followed by calcination. The high-temperature wurtzite phase annealed at 800 °C had a high susceptibility to UV irradiation in water, while the low-temperature zincblende phase annealed at 400 °C was found to be stable. Chlorine doping increased the rate of photocorrosion in water, whereas cobalt doping led to a stabilization of the ZnS nanoparticles. Based on photochemical and spectroscopic investigations applying UV/vis, X-ray photoelectron, and photoluminescence spectroscopy, the increased susceptibility of Cl-doped ZnS is ascribed to a higher number of surface point defects, whereas the stabilization by Co 2+ is caused by additional recombination pathways for the charge carriers in the bulk, thus avoiding photocorrosion processes at the surface. Additional doping of Cl-doped ZnS with cobalt ions was found to counteract the detrimental effect of the chloride ions efficiently.

Harmonically mode-locked erbium-doped waveguide laser

NASA Astrophysics Data System (ADS)

Fanto, Michael L.; Malowicki, John E.; Bussjager, Rebecca J.; Johns, Steven T.; Vettese, Elizabeth K.; Hayduk, Michael J.

2004-08-01

The generation of ultrastable picosecond pulses in the 1550 nm range is required for numerous applications that include photonic analog-to-digital converter systems and high-bit rate optical communication systems. Mode-locked erbium-doped fiber ring lasers (EDFLs) are typically used to generate pulses at this wavelength. In addition to timing stability and output power, the physical size of the laser cavity is of primary importance to the Air Force. The length of the erbium (Er)-doped fiber used as the gain medium may be on the order of meters or even tens of meters which adds complexity to packaging. However, with the recent advancements in the production of multi-component glasses, higher doping concentrations can be achieved as compared to silicate glasses. Even more recent is the introduction of Er-doped multi-component glass waveguides, thus allowing the overall footprint of the gain medium to be reduced. We have constructed a novel harmonically mode-locked fiber ring laser using the Er-doped multi-component glass waveguide as the gain medium. The performance characteristics of this Er-doped waveguide laser (EDWL) including pulse width, spectral width, harmonic suppression, optical output power, laser stability and single sideband residual phase noise will be discussed in this paper.

Enhanced room temperature ferromagnetism in Cr-doped ZnO nanoparticles prepared by auto-combustion method

NASA Astrophysics Data System (ADS)

Haq, Khizar-ul; Irfan, M.; Masood, Muhammad; Saleem, Murtaza; Iqbal, Tahir; Ahmad, Ishaq; Khan, M. A.; Zaffar, M.; Irfan, Muhammad

2018-04-01

Zn1‑x Cr x O (x = 0.00, 0.01, 0.03, 0.05, 0.07, and 0.09) nanoparticles were synthesized, by an auto-combustion method. Structural, optical, and magnetic characteristics of Cr-doped ZnO samples calcined at 600 °C have been analyzed by using X-ray diffraction (XRD), field emission scanning electron microscope (FESEM), UV–Vis spectroscopy and vibrating sample magnetometer (VSM). The XRD data confirmed the hexagonal wurtzite structure of pure and Cr-doped ZnO nanoparticles. The calculated values of grain size using Scherrer's formula are in the range of 30.7–9.2 nm. The morphology of nanopowders has been observed by FESEM, and EDS results confirmed a systematic increase of Cr content in the samples and clearly indicate with no impurity element. The band gaps, computed by UV–Vis spectroscopy, are in the range of 2.83–2.35 eV for different doping concentrations. By analyzing VSM data, significantly enhanced room temperature ferromagnetism is identified in Cr-doped ZnO samples. The value of magnetization is a 12 times increased of the value reported by Daunet al. (2010). Room temperature ferromagnetism of the nanoparticles is of vital prominence for spintronics applications. Project supported by the Office of Research, Innovation, and Commercialization (ORIC), MUST Mirpur (AJK).

Conjugation of glucose oxidase onto Mn-doped ZnS quantum dots for phosphorescent sensing of glucose in biological fluids.

PubMed

Wu, Peng; He, Yu; Wang, He-Fang; Yan, Xiu-Ping

2010-02-15

Integrating various enzymes with nanomaterials provides various nanohybrids with new possibilities in biosensor applications. Furthermore, the enzymatic activity and stability are also improved due to the large surface area of nanomaterials. Here we report the conjugation of glucose oxidase (GOD) onto phosphorescent Mn-doped ZnS quantum dots (QDs) using 1-ethyl-3-(3-dimethylaminopropy)carbodiimide (EDC)/N-hydroxysuccinimide (NHS) as coupling reagents for glucose biosensing based on the effective quenching of the room temperature phosphorescence (RTP) of Mn-doped ZnS QDs by the H(2)O(2) generated from GOD-catalyzed oxidation of glucose. The obtained bioconjugate not only provided improved enzymatic performance with Michaelis-Menten constant of 0.70 mM but also favored biological applications because the phosphorescent detection mode avoided the interference from autofluorescence and scattering light from the biological matrix. In addition, the GOD-conjugated Mn-doped ZnS QDs showed better thermal stability in the temperature range of 20-80 degrees C. The GOD-Mn-doped ZnS QDs based RTP sensor for glucose gave a detection limit of 3 microM and two linear ranges from 10 microM to 0.1 mM and from 0.1 to 1 mM. The developed biosensor was successfully applied to the determination of glucose in real serum samples without the need for any complicated sample pretreatments.

Efficient Donor Impurities in ZnO Nanorods by Polyethylene Glycol for Enhanced Optical and Glutamate Sensing Properties.

PubMed

Elhag, Sami; Khun, Kimleang; Khranovskyy, Volodymyr; Liu, Xianjie; Willander, Magnus; Nur, Omer

2016-02-06

In this paper, we show that the possibility of using polyethylene glycol (EG) as a hydrogen source and it is used to assist the hydrothermal synthesis of ZnO nanorods (ZNRs). EG doping in ZNRs has been found to significantly improve their optical and chemical sensing characteristics toward glutamate. The EG was found to have no role on the structural properties of the ZNRs. However, the x-ray photoelectron spectroscopy (XPS) suggests that the EG could induce donor impurities effect in ZnO. Photoluminescence (PL) and UV-Vis. spectra demonstrated this doping effect. Mott-Schottky analysis at the ZNRs/electrolyte interface was used to investigate the charge density for the doped ZNRs and showed comparable dependence on the used amount of EG. Moreover, the doped ZNRs were used in potentiometric measurements for glutamate for a range from 10(-6) M to 10(-3) M and the potential response of the sensor electrode was linear with a slope of 91.15 mV/decade. The wide range and high sensitivity of the modified ZNRs based glutamate biosensor is attributed to the doping effect on the ZNRs that is dictated by the EG along with the high surface area-to-volume ratio. The findings in the present study suggest new avenues to control the growth of n-ZnO nanostructures and enhance the performance of their sensing devices.

Efficient Donor Impurities in ZnO Nanorods by Polyethylene Glycol for Enhanced Optical and Glutamate Sensing Properties

PubMed Central

Elhag, Sami; Khun, Kimleang; Khranovskyy, Volodymyr; Liu, Xianjie; Willander, Magnus; Nur, Omer

2016-01-01

In this paper, we show that the possibility of using polyethylene glycol (EG) as a hydrogen source and it is used to assist the hydrothermal synthesis of ZnO nanorods (ZNRs). EG doping in ZNRs has been found to significantly improve their optical and chemical sensing characteristics toward glutamate. The EG was found to have no role on the structural properties of the ZNRs. However, the x-ray photoelectron spectroscopy (XPS) suggests that the EG could induce donor impurities effect in ZnO. Photoluminescence (PL) and UV-Vis. spectra demonstrated this doping effect. Mott-Schottky analysis at the ZNRs/electrolyte interface was used to investigate the charge density for the doped ZNRs and showed comparable dependence on the used amount of EG. Moreover, the doped ZNRs were used in potentiometric measurements for glutamate for a range from 10−6 M to 10−3 M and the potential response of the sensor electrode was linear with a slope of 91.15 mV/decade. The wide range and high sensitivity of the modified ZNRs based glutamate biosensor is attributed to the doping effect on the ZNRs that is dictated by the EG along with the high surface area-to-volume ratio. The findings in the present study suggest new avenues to control the growth of n-ZnO nanostructures and enhance the performance of their sensing devices. PMID:26861342

Evolution of structural, electronic and magneto-transport properties of Sr2Ir1-xTixO4 5d based oxide

NASA Astrophysics Data System (ADS)

Bhatti, Imtiaz Noor; Pramanik, A. K.

2018-05-01

To investigate the effect of chemical doping on structural and transport properties in Sr2IrO4, in this study we have doped Ti4+ (3d0) at Ir4+ (5d5) site. Thus Ti doping introduces hole in the electronic band moreover, it also weaken the spin orbital coupling (SOC) and enhance electronic correlation (U). We have prepared the polycrystalline samples of Sr2Ir1-xTixO4 with x = 0.0 0.05 and 0.10 with solid state reaction method. Single phase and chemically pure samples were obtained. All samples crystalizes in tetragonal structure and I41/acd symmetry. The structural analysis shows the evolution of lattice parameter with doping. The temperature dependent resistivity is measured using four probe technique down in the temperature range 5 K-300 K. The resistivity increases with Ti doping. Temperature dependency of resistivity is explained by thermal activated 2-dimensional Mott Variable Hopping range model. To further understand the transport behavior both temperature and field dependent magneto-resistance is also studied. Negative magneto-resistance (MR) has been observed for all samples at 50 K. The MR shows quadratic field dependence at high field, implies a relevance of a quantum interference effect in this spin orbital coupled insulator.

Vapor Growth and Characterization of Cr-Doped ZnSe Crystals

NASA Technical Reports Server (NTRS)

Su, Ching-Hua; Feth, Shari; Volz, M. P.; Matyi, R.; George, M. A.; Chattopadhyay, K.; Burger, A.; Lehoczky, S. L.

1999-01-01

Cr-doped ZnSe single crystals were grown by a self-seeded physical vapor transport technique in both vertical (stabilized) and horizontal configurations. The source materials were mixtures of ZnSe and CrSe. Growth temperatures were in the range of 1140-1150 C and the furnace translation rates were 1.9-2.2 mm/day. The surface morphology of the as-grown crystals was examined by scanning electron microscopy (SEM) and atomic force microscopy (AFM). Different features of the as-grown surface of the vertically and horizontally grown crystals suggest that different growth mechanisms were involved in the two growth configurations. The [Cr] doping levels were determined to be in the range of 1.8-8.3 x 10 (exp 19) cm (exp -3) from optical absorption measurements. The crystalline quality of the grown crystals were examined by high-resolution triple-crystal X-ray diffraction (HRTXD) analysis.

Electromagnetic wave absorbing properties of amorphous carbon nanotubes.

PubMed

Zhao, Tingkai; Hou, Cuilin; Zhang, Hongyan; Zhu, Ruoxing; She, Shengfei; Wang, Jungao; Li, Tiehu; Liu, Zhifu; Wei, Bingqing

2014-07-10

Amorphous carbon nanotubes (ACNTs) with diameters in the range of 7-50 nm were used as absorber materials for electromagnetic waves. The electromagnetic wave absorbing composite films were prepared by a dip-coating method using a uniform mixture of rare earth lanthanum nitrate doped ACNTs and polyvinyl chloride (PVC). The microstructures of ACNTs and ACNT/PVC composites were characterized using transmission electron microscope and X-ray diffraction, and their electromagnetic wave absorbing properties were measured using a vector-network analyzer. The experimental results indicated that the electromagnetic wave absorbing properties of ACNTs are superior to multi-walled CNTs, and greatly improved by doping 6 wt% lanthanum nitrate. The reflection loss (R) value of a lanthanum nitrate doped ACNT/PVC composite was -25.02 dB at 14.44 GHz, and the frequency bandwidth corresponding to the reflector loss at -10 dB was up to 5.8 GHz within the frequency range of 2-18 GHz.

Effect of high-temperature annealing on the microstructure and thermoelectric properties of GaP doped SiGe. M.S. Thesis

NASA Technical Reports Server (NTRS)

Draper, Susan L.

1987-01-01

Annealing of GaP doped SiGe will significantly alter the thermoelectric properties of the material resulting in increased performance as measured by the figure of merit Z and the power factor P. The microstructures and corresponding thermoelectric properties after annealing in the 1100 to 1300 C temperature range have been examined to correlate performance improvement with annealing history. The figure of merit and power factor were both improved by homogenizing the material and limiting the amount of cross-doping. Annealing at 1215 C for 100 hr resulted in the best combination of thermoelectric properties with a resultant figure of merit exceeding 1x10 to the -3 deg C to the -1 and a power factor of 44 microW/cm/deg C sq for the temperature range of interest for space power: 400 to 1000 C.

Low-Temperature Thermoelectric Properties of Fe2VAl with Partial Cobalt Doping

NASA Astrophysics Data System (ADS)

Liu, Chang; Morelli, Donald T.

2012-06-01

Ternary metallic alloy Fe2VAl with a pseudogap in its energy band structure has received intensive scrutiny for potential thermoelectric applications. Due to the sharp change in the density of states profile near the Fermi level, interesting transport properties can be triggered to render possible enhancement in the overall thermoelectric performance. Previously, this full-Heusler-type alloy was partially doped with cobalt at the iron sites to produce a series of compounds with n-type conductivity. Their thermoelectric properties in the temperature range of 300 K to 850 K were reported. In this research, efforts were made to extend the investigation on (Fe1- x Co x )2VAl to the low-temperature range. Alloy samples were prepared by arc-melting and annealing. Seebeck coefficient, electrical resistivity, and thermal conductivity measurements were performed from 80 K to room temperature. The effects of cobalt doping on the material's electronic and thermal properties are discussed.

Cu-doped Cd1- x Zn x S alloy: synthesis and structural investigations

NASA Astrophysics Data System (ADS)

Yadav, Indu; Ahlawat, Dharamvir Singh; Ahlawat, Rachna

2016-03-01

Copper doped Cd1- x Zn x S ( x ≤ 1) quantum dots have been synthesized using chemical co-precipitation method. Structural investigation of the synthesized nanomaterials has been carried out by powder XRD method. The XRD results have confirmed that as-prepared Cu-doped Cd1- x Zn x S quantum dots have hexagonal structure. The average nanocrystallite size was estimated in the range 2-12 nm using Debye-Scherrer formula. The lattice constants, lattice plane, d-spacing, unit cell volume, Lorentz factor and dislocation density were also calculated from XRD data. The change in particle size was observed with the change in Zn concentration. Furthermore, FTIR spectra of the prepared samples were observed for identification of COO- and O-H functional groups. The TEM study has also reported the same size range of nanoparticles. The increase in agglomeration has been observed with the increase in Zn concentration in the prepared samples.

EPR investigations of silicon carbide nanoparticles functionalized by acid doped polyaniline

NASA Astrophysics Data System (ADS)

Karray, Fekri; Kassiba, Abdelhadi

2012-06-01

Nanocomposites (SiC-PANI) based on silicon carbide nanoparticles (SiC) encapsulated in conducting polyaniline (PANI) are synthesized by direct polymerization of PANI on the nanoparticle surfaces. The conductivity of PANI and the nanocomposites was modulated by several doping levels of camphor sulfonic acid (CSA). Electron paramagnetic resonance (EPR) investigations were carried out on representative SiC-PANI samples over the temperature range [100-300 K]. The features of the EPR spectra were analyzed taking into account the paramagnetic species such as polarons with spin S=1/2 involved in two main environments realized in the composites as well as their thermal activation. A critical temperature range 200-225 K was revealed through crossover changes in the thermal behavior of the EPR spectral parameters. Insights on the electronic transport properties and their thermal evolutions were inferred from polarons species probed by EPR and the electrical conductivity in doped nanocomposites.

Exchange-mediated spin-lattice relaxation of Fe3+ ions in borate glasses.

PubMed

Misra, Sushil K; Pilbrow, John R

2007-03-01

Spin-lattice relaxation times (T1) of two borate glasses doped with different concentrations of Fe2O3 were measured using the Electron Spin-Echo (ESE) technique at X-band (9.630 GHz) in the temperature range 2-6K. In comparison with a previous investigation of Fe3+-doped silicate glasses, the relaxation rates were comparable and differed by no more than a factor of two. The data presented here extend those previously reported for borate glasses in the 10-250K range but measured using the amplitude-modulation technique. The T1 values were found to depend on temperature (T) as T(n) with n approximately 1 for the 1% and 0.1% Fe2O3-doped glass samples. These results are consistent with spin-lattice relaxation as effected by exchange interaction of a Fe3+ spin exchange-coupled to another Fe3+ spin in an amorphous material.

Ultrafast Spectral Photoresponse of Bilayer Graphene: Optical Pump-Terahertz Probe Spectroscopy.

PubMed

Kar, Srabani; Nguyen, Van Luan; Mohapatra, Dipti R; Lee, Young Hee; Sood, A K

2018-02-27

Photoinduced terahertz conductivity Δσ(ω) of Bernal stacked bilayer graphene (BLG) with different dopings is measured by time-resolved optical pump terahertz probe spectroscopy. The real part of photoconductivity Δσ(ω) (Δσ Re (ω)) is positive throughout the spectral range 0.5-2.5 THz in low-doped BLG. This is in sharp contrast to Δσ(ω) for high-doped bilayer graphene where Δσ Re (ω) is negative at low frequency and positive on the high frequency side. We use Boltzmann transport theory to understand quantitatively the frequency dependence of Δσ(ω), demanding the energy dependence of different scattering rates such as short-range impurity scattering, Coulomb scattering, carrier-acoustic phonon scattering, and substrate surface optical phonon scattering. We find that the short-range disorder scattering dominates over other processes. The calculated photoconductivity captures very well the experimental conductivity spectra as a function of lattice temperature varying from 300 to 4 K, without any empirical fitting procedures adopted so far in the literature. This helps us to understand the intraband conductivity of photoexcited hot carriers in 2D materials.

Development of a High Ionization Efficiency Molten Glass Ion Emitter for TIMS

NASA Astrophysics Data System (ADS)

Cheversia, M. B.; Farmer, G.; Koval, C.; David, D.

2006-12-01

Thermal ionization mass spectrometry (TIMS) remains the method of choice for many high precision isotope ratio determinations but is handicapped by the use of low efficiency ion emitters. For example, ionization efficiencies from molten glass emitters (Si-gel) used for such elements as Pb, Cr, Ru, and Ag are in the range of 0.05-2%, which limits the sample size and the precision to which isotope ratio determinations for these elements can be made. Our aim is to improve the ionization efficiency of the molten glass ion emitter using electrochemical methods. This work builds on recent observations indicating that many metals doped in borosilicate glasses (eg. Bi, Ag), are emitted from the liquid glass (in vacuo) primarily as the neutral metal atom. Our goal is to increase the proportion of singly charged metal atoms in metal-doped molten glasses via oxidation induced by electrochemical methods and to assess whether such in situ oxidation of metal atoms leads to an increase in emitted metal ions. Our experiments are performed in a vacuum chamber that mimics conditions in the sample chamber of the TIMS. A borosilicate glass sample is placed in a miniature ceramic crucible. The crucible contains working and reference Pt electrodes, and a Pt thermocouple. The entire apparatus is wrapped with a resistively heated Ta wire until temperatures in the glass reach approximately 1400°C, to ensure that the glass is molten. By this method, we have produced simple cyclic voltammograms that suggest that over a 100°C temperature range, the borosilicate glass undergoes a transition from resistive behavior as a solid, to a conductive electrolyte, as a molten liquid glass, as expected. The change is evident as an order of magnitude decrease in resistivity of the glass, as interpreted from the voltammograms. The voltammograms produced for the pure borosilicate glasses represent the baseline against which we will compare the electrochemical characteristics of Pb doped glasses. These experiments are currently underway and are designed to determine the speciation of lead in the glass, and to determine the voltages required to induce cathodic currents in the glass corresponding to ionization to Pb+ and Pb2+. By generating a cathodic current and an increased concentration of the oxidized species, we hope to ultimately generate a higher intensity ion beam, higher ionization efficiency for low efficiency elements, and higher precision analyses on small sample sizes for the TIMS.

30-W Yb3+-pulsed fiber laser with wavelength tuning

NASA Astrophysics Data System (ADS)

Davydov, B. L.; Krylov, A. A.

2007-12-01

We have investigated various pulsed operation regimes of a diode-pumped Yb3+-doped fiber laser with both an acoustooptic filter and a shutter inside the resonator. To imbed the polarization-sensitive acoustooptic-tunable spectral filter into the polarization-nonmaintaining resonator, based on an “isotropic” single-mode fiber without “polarization’ losses, we have used a CaCO3 single-crystal nondispersive thermostable polarization splitter. Stable smooth bell-shaped laser pulses were obtained in the Q-switch generation regime across the entire wavelength tuning band. Their duration depended on the resonator travel time and their repetition rate was determined exclusively by the outer high-frequency generator controlling the acoustooptic shutter. A pulsed laser radiation tuning bandwidth of more than 20-nm at a repetition rate band of 10-100 kHz was observed in the amplification band of the Yb3+-doped fiber. A stable average power of 30 W of the pulsed 70-ns 100-kHz laser radiation in a near Gaussian beam was reached by means of the two-stage amplifier based on Yb3+-doped fibers with an enlarged mode field diameter (14 μm). The amplifier was pumped by λ = 975 nm CW multimode laser diodes with a maximum average power of 42 W.

Macroscopic behavior and microscopic magnetic properties of nanocarbon

NASA Astrophysics Data System (ADS)

Lähderanta, E.; Ryzhov, V. A.; Lashkul, A. V.; Galimov, D. M.; Titkov, A. N.; Matveev, V. V.; Mokeev, M. V.; Kurbakov, A. I.; Lisunov, K. G.

2015-06-01

Here are presented investigations of powder and glass-like samples containing carbon nanoparticles, not intentionally doped and doped with Ag, Au and Co. The neutron diffraction study reveals an amorphous structure of the samples doped with Au and Co, as well as the magnetic scattering due to a long-range FM order in the Co-doped sample. The composition and molecular structure of the sample doped with Au is clarified with the NMR investigations. The temperature dependence of the magnetization, M (T), exhibits large irreversibility in low fields of B=1-7 mT. M (B) saturates already above 2 T at high temperatures, but deviates from the saturation behavior below 50 (150 K). Magnetic hysteresis is observed already at 300 K and exhibits a power-law temperature decay of the coercive field, Bc (T). The macroscopic behavior above is typical of an assembly of partially blocked magnetic nanoparticles. The values of the saturation magnetization, Ms, and the blocking temperature, Tb, are obtained as well. However, the hysteresis loop in the Co-doped sample differs from that in other samples, and the values of Bc and Ms are noticeably increased.

Nitrogen and sulfur co-doped carbon dots with strong blue luminescence.

PubMed

Ding, Hui; Wei, Ji-Shi; Xiong, Huan-Ming

2014-11-21

Sulfur-doped carbon dots (S-CDs) with a quantum yield (QY) of 5.5% and nitrogen, sulfur co-doped carbon dots (N,S-CDs) with a QY of 54.4% were synthesized, respectively, via the same hydrothermal route using α-lipoic acid as the carbon source. The obtained S-CDs and N,S-CDs had similar sizes but different optical features. The QY of N,S-CDs was gradually enhanced when extending the reaction time to increase the nitrogen content. After careful characterization of these CDs, the doped nitrogen element was believed to be in the form of C=N and C-N bonds which enhanced the fluorescence efficiency significantly. Meanwhile, the co-doped sulfur element was found to be synergistic for nitrogen doping in N,S-CDs. The optimal N,S-CDs were successfully employed as good multicolor cell imaging probes due to their fine dispersion in water, excitation-dependent emission, excellent fluorescence stability and low toxicity. Besides, such N,S-CDs showed a wide detection range and excellent accuracy as fluorescent sensors for Fe(3+) ions.

Structural and electrical properties of trimethylboron-doped silicon nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lew, K.-K.; Pan Ling; Bogart, Timothy E.

2004-10-11

Trimethylboron (TMB) was investigated as a p-type dopant source for the vapor-liquid-solid growth of boron-doped silicon nanowires (SiNWs). The boron concentration in the nanowires was measured using secondary ion mass spectrometry and results were compared for boron-doping using TMB and diborane (B{sub 2}H{sub 6}) sources. Boron concentrations ranging from 1x10{sup 18} to 4x10{sup 19} cm{sup -3} were obtained by varying the inlet dopant/SiH{sub 4} gas ratio. TEM characterization revealed that the B{sub 2}H{sub 6}-doped SiNWs consisted of a crystalline core with a thick amorphous Si coating, while the TMB-doped SiNWs were predominantly single crystal even at high boron concentrations. Themore » difference in structural properties was attributed to the higher thermal stability and reduced reactivity of TMB compared to B{sub 2}H{sub 6}. Four-point resistivity and gate-dependent conductance measurements were used to confirm p-type conductivity in the TMB-doped nanowires and to investigate the effect of dopant concentration on nanowire resistivity.« less

Doping evolution of spin and charge excitations in the Hubbard model

DOE PAGES

Kung, Y. F.; Nowadnick, E. A.; Jia, C. J.; ...

2015-11-05

We shed light on how electronic correlations vary across the phase diagram of the cuprate superconductors, examining the doping evolution of spin and charge excitations in the single-band Hubbard model using determinant quantum Monte Carlo (DQMC). In the single-particle response, we observe that the effects of correlations weaken rapidly with doping, such that one may expect the random phase approximation (RPA) to provide an adequate description of the two-particle response. In contrast, when compared to RPA, we find that significant residual correlations in the two-particle excitations persist up to 40% hole and 15% electron doping (the range of dopings achievedmore » in the cuprates). Ultimately, these fundamental differences between the doping evolution of single- and multi-particle renormalizations show that conclusions drawn from single-particle processes cannot necessarily be applied to multi-particle excitations. Eventually, the system smoothly transitions via a momentum-dependent crossover into a weakly correlated metallic state where the spin and charge excitation spectra exhibit similar behavior and where RPA provides an adequate description.« less

High doping effect on the thermoelectric properties of p-type lead telluride

NASA Astrophysics Data System (ADS)

Dmitriev, A. V.

2018-04-01

We study theoretically the effect of heavy doping on the thermoelectric properties of p-type PbTe in the acceptor doping interval of 5 × 1019 to 4 × 1020 cm-3 and in the temperature range of 300 to 900 K. In our calculations, a three-band model of the PbTe electron energy spectrum is used that takes into account not only the light electron and hole bands but also the heavy-hole band. This so-called Σ-band plays an important role in the emergence of the figure-of-merit increase in this material at heavy acceptor doping. The calculated thermoelectric characteristics appear to be sensitive to the doping level. An increase in the figure-of-merit up to ZT ≈ 1.3 at 900 K was found at the doping level of 2 × 1020 cm-3. The maximum of ZT on the temperature axis is situated close to the temperature at which the light hole and heavy hole band edges coincide and hence, a prominent density-of-states singularity appears in the valence band, and the Fermi level lies near this singularity.

Current implementation and future of the Athlete Biological Passport.

PubMed

Sottas, Pierre-Edouard; Vernec, Alan

2012-07-01

During the last four decades, the main instrument at the disposal of anti-doping authorities has been the detection of prohibited substances in biological samples collected from athletes. However, the availability of substances identical to those produced by the human body, such as EPO, testosterone and GH, necessitated a new drug-testing paradigm. From the early 2000's, the Athlete Biological Passport (ABP) was proposed as an alternative means to drug testing. Doping leaves a characteristic fingerprint on the biology of the athlete and the ABP is used to prove the act of doping from the detection of that fingerprint. Once a biomarker of doping is implemented in the ABP, it will continue to remain valid and should be able to detect the physiological changes brought on by performance-enhancing drugs that have not yet been invented. However, the sensitivity of the ABP to detect doping is limited if the physiological result of a low level of doping remains within the individual's own reference range. Recent advances in proteomics and metabolomics show the huge potential of the ABP.

Structural, optical, and magnetic studies of manganese-doped zinc oxide hierarchical microspheres by self-assembly of nanoparticles.

PubMed

Hao, Yao-Ming; Lou, Shi-Yun; Zhou, Shao-Min; Yuan, Rui-Jian; Zhu, Gong-Yu; Li, Ning

2012-02-02

In this study, a series of manganese [Mn]-doped zinc oxide [ZnO] hierarchical microspheres [HMSs] are prepared by hydrothermal method only using zinc acetate and manganese acetate as precursors and ethylene glycol as solvent. X-ray diffraction indicates that all of the as-obtained samples including the highest Mn (7 mol%) in the crystal lattice of ZnO have a pure phase (hexagonal wurtzite structure). A broad Raman spectrum from as-synthesized doping samples ranges from 500 to 600 cm-1, revealing the successful doping of paramagnetic Mn2+ ions in the host ZnO. Optical absorption analysis of the samples exhibits a blueshift in the absorption band edge with increasing dopant concentration, and corresponding photoluminescence spectra show that Mn doping suppresses both near-band edge UV emission and defect-related blue emission. In particular, magnetic measurements confirm robust room-temperature ferromagnetic behavior with a high Curie temperature exceeding 400 K, signifying that the as-formed Mn-doped ZnO HMSs will have immense potential in spintronic devices and spin-based electronic technologies.

Size Dependence of Doping by a Vacancy Formation Reaction in Copper Sulfide Nanocrystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Elimelech, Orian; Liu, Jing; Plonka, Anna M.

Doping of nanocrystals (NCs) is a key, yet underexplored, approach for tuning of the electronic properties of semiconductors. An important route for doping of NCs is by vacancy formation. The size and concentration dependence of doping was studied in copper(I) sulfide (Cu2S) NCs through a redox reaction with iodine molecules (I2), which formed vacancies accompanied by a localized surface plasmon response. X-ray spectroscopy and diffraction reveal transformation from Cu2S to Cu-depleted phases, along with CuI formation. Greater reaction efficiency was observed for larger NCs. This behavior is attributed to interplay of the vacancy formation energy, which decreases for smaller sizedmore » NCs, and the growth of CuI on the NC surface, which is favored on well-defined facets of larger NCs. This doping process allows tuning of the plasmonic properties of a semiconductor across a wide range of plasmonic frequencies by varying the size of NCs and the concentration of iodine. Controlled vacancy doping of NCs may be used to tune and tailor semiconductors for use in optoelectronic applications.« less

Characterization of Sb-doped Bi(2)UO(6) solid solutions by X-ray diffraction and X-ray absorption spectroscopy.

PubMed

Misra, N L; Yadav, A K; Dhara, Sangita; Mishra, S K; Phatak, Rohan; Poswal, A K; Jha, S N; Sinha, A K; Bhattacharyya, D

2013-01-01

The preparation and characterization of Sb-doped Bi(2)UO(6) solid solutions, in a limited composition range, is reported for the first time. The solid solutions were prepared by solid-state reactions of Bi(2)O(3), Sb(2)O(3) and U(3)O(8) in the required stoichiometry. The reaction products were characterized by X-ray diffraction (XRD) and X-ray absorption spectroscopy (XAS) measurements at the Bi and U L(3) edges. The XRD patterns indicate the precipitation of additional phases in the samples when Sb doping exceeds 4 at%. The chemical shifts of the Bi absorption edges in the samples, determined from the XANES spectra, show a systematic variation only up to 4 at% of Sb doping and support the results of XRD measurements. These observations are further supported by the local structure parameters obtained by analysis of the EXAFS spectra. The local structure of U is found to remain unchanged upon Sb doping indicating that Sb(+3) ions replace Bi(+3) during the doping of Bi(2)UO(6) by Sb.

Polarization induced conductive AFM on cobalt doped ZnO nanostructures

NASA Astrophysics Data System (ADS)

Sahoo, Pradosh Kumar; Mangamma, G.; Rajesh, A.; Kamruddin, M.; Dash, S.

2017-05-01

In the present work cobalt doped ZnO (CZO) nanostructures (NS) have been synthesized by of sol-gel and spin coating process. After the crystal phase confirmation by GIXRD and Raman spectroscopy, Conductive Atomic Force Microscopy (C-AFM) measurement was performed on CZO NS which shows the random distribution of electrically conducting zones on the surface of the material exhibiting current in the range 4-170 pA. We provide the possible mechanisms for variation in current distribution essential for quantitative understanding of transport properties of ZnO NS in doped and undoped forms.

Effective gain measurements in chromium-doped forsterite

NASA Technical Reports Server (NTRS)

Petricevic, V.; Seas, A.; Alfano, R. R.

1991-01-01

Effective gain cross section in tetravalent chromium-doped forsterite laser crystal was measured over the 1180-1330 nm spectral range. The experiment was performed using two collinear laser beams in a pump-and-probe arrangement. The peak-gain cross section from this measurement is estimated to be 1.9 x 10 to the -19th sq cm at 1215 nm, which is comparable to the value of about 2 x 10 to the -19th sq cm predicted by fluorescence linewidth and lifetime measurements. These results indicate that excited-state absorption is not a major loss mechanism in tetravalent chromium-doped forsterite.

Advances in highly doped upconversion nanoparticles.

PubMed

Wen, Shihui; Zhou, Jiajia; Zheng, Kezhi; Bednarkiewicz, Artur; Liu, Xiaogang; Jin, Dayong

2018-06-20

Lanthanide-doped upconversion nanoparticles (UCNPs) are capable of converting near-infra-red excitation into visible and ultraviolet emission. Their unique optical properties have advanced a broad range of applications, such as fluorescent microscopy, deep-tissue bioimaging, nanomedicine, optogenetics, security labelling and volumetric display. However, the constraint of concentration quenching on upconversion luminescence has hampered the nanoscience community to develop bright UCNPs with a large number of dopants. This review surveys recent advances in developing highly doped UCNPs, highlights the strategies that bypass the concentration quenching effect, and discusses new optical properties as well as emerging applications enabled by these nanoparticles.

Low-stress doped ultrananocrystalline diamond

DOEpatents

Sumant, Anirudha V.; Buja, Federico; van Spengen, Willem Merlijn

2016-10-25

Nanocrystalline diamond coatings exhibit stress in nano/micro-electro mechanical systems (MEMS). Doped nanocrstalline diamond coatings exhibit increased stress. A carbide forming metal coating reduces the in-plane stress. In addition, without any metal coating, simply growing UNCD or NCD with thickness in the range of 3-4 micron also reduces in-plane stress significantly. Such coatings can be used in MEMS applications.

Small Angle Neutron Scattering (SANS) Characterization of Electrically Conducting Polyaniline Nanofiber/Polyimide Nanocomposites

DTIC Science & Technology

2011-10-25

range, neither the D-B nor the IPL model could be used to characterize the size and shape of all PANI-0.5-CSA (polyaniline camphor sulfonic acid doped...be used to characterize the size and shape of all PANI-0.5-CSA (polyaniline camphor sulfonic acid doped polymer)/polyimide blend systems. At 1 and 2

Doping effects on UPd 2Al 3

NASA Astrophysics Data System (ADS)

Geibel, C.; Schank, C.; Jährling, F.; Buschinger, B.; Grauel, A.; Lühmann, T.; Gegenwart, P.; Helfrich, R.; Reinders, P. H. P.; Steglich, F.

1994-04-01

We present first results of a doping study on the U site on UPd 2Al 3. These results give further support for a tetravalent uranium configuration and an induced type of antiferromagnetic ordering. They confirm the importance of an unperturbed electronic configuration for both antiferromagnetic long-range ordering and heavy-fermion superconductivity. Implications for the interaction between both phenomena are discussed.

Temperature dependent simulation of diamond depleted Schottky PIN diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hathwar, Raghuraj; Dutta, Maitreya; Chowdhury, Srabanti

2016-06-14

Diamond is considered as an ideal material for high field and high power devices due to its high breakdown field, high lightly doped carrier mobility, and high thermal conductivity. The modeling and simulation of diamond devices are therefore important to predict the performances of diamond based devices. In this context, we use Silvaco{sup ®} Atlas, a drift-diffusion based commercial software, to model diamond based power devices. The models used in Atlas were modified to account for both variable range and nearest neighbor hopping transport in the impurity bands associated with high activation energies for boron doped and phosphorus doped diamond.more » The models were fit to experimentally reported resistivity data over a wide range of doping concentrations and temperatures. We compare to recent data on depleted diamond Schottky PIN diodes demonstrating low turn-on voltages and high reverse breakdown voltages, which could be useful for high power rectifying applications due to the low turn-on voltage enabling high forward current densities. Three dimensional simulations of the depleted Schottky PIN diamond devices were performed and the results are verified with experimental data at different operating temperatures.« less

2-μm optical time domain reflectometry measurements from novel Al-, Ge-, CaAlSi- doped and standard single-mode fibers

NASA Astrophysics Data System (ADS)

Rodriguez-Novelo, J. C.; Sanchez-Nieves, J. A.; Sierra-Calderon, A.; Sanchez-Lara, R.; Alvarez-Chavez, J. A.

2017-08-01

The development of novel Al-, Ge- doped and un-doped standard single mode fibers for future optical communication at 2μm requires the integration of, among other pieces of equipment, an optical time domain reflectometry (OTDR) technique for precise spectral attenuation characterization, including the well-known cut-back method. The integration of a state of the art OTDR at 2μm could provide valuable attenuation information from the aforementioned novel fibers. The proposed setup consists of a 1.7 mW, 1960nm pump source, a 30 dB gain Thulium doped fibre amplifier at 2μm, an 0.8mm focal length lens with a 0.5 NA, a 30 MHz acusto-optic modulator, a 3.1 focal length lens with a 0.68NA, an optical circulator at 2μm, an InGaAs photodetector for 1.2 nm-2.6 nm range, a voltage amplifier and an oscilloscope. The propagated pulse rate is 50 KHz, with 500 ns, 200 ns, 100 ns and 50 ns pulse widths. Attenuation versus novel fibers types for lengths ranging from 400- to 1000- meter samples were obtained using the proposed setup.

Absorption spectra and nonlinear transmission (at λ = 2940 nm) of a diffusion-doped Fe{sup 2+}:ZnSe single crystal

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bufetova, G A; Gulyamova, E S; Il'ichev, N N

2015-06-30

Transmission spectra of a ZnSe sample diffusion-doped with Fe{sup 2+} ions have been measured in the wavelength range 500 – 7000 nm. A broad absorption band in the range 500 – 1500 nm has been observed in both doped and undoped regions of the sample. This band is possibly due to deviations from stoichiometry in the course of diffusion doping. The transmission of the Fe{sup 2+}:ZnSe sample at a wavelength of 2940 nm has been measured at various dopant concentrations and high peak pulse intensities (up to 8 MW cm{sup -2}). The samples have been shown to be incompletely bleached:more » during a laser pulse, the transmission first increases, reaches a maximum, and then falls off. Our results suggest that the incomplete bleaching cannot be accounted for by excited-state absorption. The incomplete bleaching (as well as the transmission maximum) is due to the heating of the sample, which leads to a reduction in upper level lifetime and, accordingly, to an increase in absorption saturation intensity. (nonlinear optical phenomena)« less

Paramagnetic dysprosium-doped zinc oxide thin films grown by pulsed-laser deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lo, Fang-Yuh, E-mail: fangyuhlo@ntnu.edu.tw; Ting, Yi-Chieh; Chou, Kai-Chieh

2015-06-07

Dysprosium(Dy)-doped zinc oxide (Dy:ZnO) thin films were fabricated on c-oriented sapphire substrate by pulsed-laser deposition with doping concentration ranging from 1 to 10 at. %. X-ray diffraction (XRD), Raman-scattering, optical transmission spectroscopy, and spectroscopic ellipsometry revealed incorporation of Dy into ZnO host matrix without secondary phase. Solubility limit of Dy in ZnO under our deposition condition was between 5 and 10 at. % according to XRD and Raman-scattering characteristics. Optical transmission spectroscopy and spectroscopic ellipsometry also showed increase in both transmittance in ultraviolet regime and band gap of Dy:ZnO with increasing Dy density. Zinc vacancies and zinc interstitials were identified by photoluminescencemore » spectroscopy as the defects accompanied with Dy incorporation. Magnetic investigations with a superconducting quantum interference device showed paramagnetism without long-range order for all Dy:ZnO thin films, and a hint of antiferromagnetic alignment of Dy impurities was observed at highest doping concentration—indicating the overall contribution of zinc vacancies and zinc interstitials to magnetic interaction was either neutral or toward antiferromagnetic. From our investigations, Dy:ZnO thin films could be useful for spin alignment and magneto-optical applications.« less

Electrical characterization of Bi1.50-xYxZn0.92Nb1.5O6.92 varactors

NASA Astrophysics Data System (ADS)

Qasrawi, A. F.; Muis, Khalil O. Abu; Rob, Osama H. Abu Al; Mergen, A.

2014-05-01

The electrical properties of yttrium doped bismuth zinc niobium oxide (BZN) pyrochlore ceramics are explored by means of temperature dependent electrical conductivity dielectric constant and capacitance spectra in the frequency range of 0-3 GHz. It is observed that the doped BZN exhibit a conductivity type conversion from intrinsic to extrinsic as the doping content increased from 0.04 to 0.06. The thermal energy bandgap of the intrinsic type is 3.45 eV. The pyrochlore is observed to exhibit a dielectric breakdown at 395 K. In addition, a negative capacitance (NC) spectrum with main resonance peak position of 23.2 MHz is detected. The NC effect is ascribed to the increased polarization and the availability of more free carriers in the device. When the NC signal amplitude is attenuated in the range of 0-20 dBm at 50 MHz and 150 MHz, wide tunability is monitored. Such characteristics of the Y-doped BZN are attractive for using them to cancel the positive parasitic capacitance of electronic circuits. The canceling of parasitic capacitance improves the high frequency performance of filter inductors and reduces the common mode noise of the resonance signal.

Ce3+-Doped garnet phosphors: composition modification, luminescence properties and applications.

PubMed

Xia, Zhiguo; Meijerink, Andries

2017-01-03

Garnets have the general formula of A 3 B 2 C 3 O 12 and form a wide range of inorganic compounds, occurring both naturally (gemstones) and synthetically. Their physical and chemical properties are closely related to the structure and composition. In particular, Ce 3+ -doped garnet phosphors have a long history and are widely applied, ranging from flying spot cameras, lasers and phosphors in fluorescent tubes to more recent applications in white light LEDs, as afterglow materials and scintillators for medical imaging. Garnet phosphors are unique in their tunability of the luminescence properties through variations in the {A}, [B] and (C) cation sublattice. The flexibility in phosphor composition and the tunable luminescence properties rely on design and synthesis strategies for new garnet compositions with tailor-made luminescence properties. It is the aim of this review to discuss the variation in luminescence properties of Ce 3+ -doped garnet materials in relation to the applications. This review will provide insight into the relation between crystal chemistry and luminescence for the important class of Ce 3+ -doped garnet phosphors. It will summarize previous research on the structural design and optical properties of garnet phosphors and also discuss future research opportunities in this field.

Enhanced field-dependent conductivity of magnetorheological gels with low-doped carbon nanotubes

NASA Astrophysics Data System (ADS)

Qu, Hang; Yu, Miao; Fu, Jie; Yang, Pingan; Liu, Yuxuan

2017-10-01

Magnetorheological gels (MRG) exhibit field-dependent conductivity and controllable mechanical properties. In order to extend their application field, filling a large number of traditional conductive materials is the most common means to enhance the poor conductivity of MRG. In this study, the conductivity of MRG is improved by low-doped carbon nanotubes (CNTs). The influence of CNTs on the magnetoresistance of MRG is discussed from two aspects—the improvement in electrical conductivity and the magnetic sensitivity of conductivity variation. The percolation threshold of CNTs in MRG should be between 1 wt% and 2 wt%. The conductivity of a 4 wt% CNT-doped sample increases more than 28 000 times compared with pure MRG. However, there is a cliff-like drop for the range and rate of conductivity variation when the doping amount of CNTs is between 3 wt% and 4 wt%. Therefore, it is concluded that the optimal mass fraction of CNTs is 3%, which can maintain a suitable variation range and a strong conductivity. Compared with pure MRG, its conductivity increases by at least two orders of magnitude. Finally, a sketch of particle motion simulation is developed to understand the improving mechanism and the effect of CNTs.

Disordered dimer state in electron-doped Sr 3 Ir 2 O 7

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hogan, Tom; Dally, Rebecca; Upton, Mary

2016-09-06

Spin excitations are explored in the electron-doped spin-orbit Mott insulator (Sr 1-xLa x) 3Ir 2O 7. As this bilayer square lattice system is doped into the metallic regime, long-range antiferromagnetism vanishes, yet a spectrum of gapped spin excitation remains. Excitation lifetimes are strongly damped with increasing carrier concentration, and the energy-integrated spectral weight becomes nearly momentum independent as static spin order is suppressed. Local magnetic moments, absent in the parent system, grow in metallic samples and approach values consistent with one J=12 impurity per electron doped. Our combined data suggest that the magnetic spectra of metallic (Sr 1-xLa x) 3Irmore » 2O 7 are best described by excitations out of a disordered dimer state.« less

Effect of substrate temperature on implantation doping of Co in CdS nanocrystalline thin films.

PubMed

Chandramohan, S; Kanjilal, A; Sarangi, S N; Majumder, S; Sathyamoorthy, R; Hong, C-H; Som, T

2010-07-01

We demonstrate doping of nanocrystalline CdS thin films with Co ions by ion implantation at an elevated temperature of 573 K. The modifications caused in structural and optical properties of these films are investigated. Co-doping does not lead to amorphization or formation of any secondary phase precipitate for dopant concentrations in the range of 0.34-10.8 at.% used in the present study. However, we observe a systematic reduction in the d-spacing with increasing cobalt concentration. Optical band gap of CdS does not show any obvious change upon Co-doping. In addition, implantation gives rise to grain growth and increase in the surface roughness. The results are discussed in the light of ion-matter interaction in the keV regime.

Superconductivity, pairing symmetry, and disorder in the doped topological insulator Sn 1 - x In x Te for x ≥ 0.10

DOE PAGES

Smylie, M. P.; Claus, H.; Kwok, W. -K.; ...

2018-01-19

The temperature dependence of the London penetration depth Δλ(T) in the superconducting doped topological crystalline insulator Sn 1-xIn x Te was measured down to 450 mK for two different doping levels, x ≈ 0.45 (optimally doped) and x ≈ 0.10 (underdoped), bookending the range of cubic phase in the compound. The results indicate no deviation from fully gapped BCS-like behavior, eliminating several candidate unconventional gap structures. Critical field values below 1 K and other superconducting parameters are also presented. The introduction of disorder by repeated particle irradiation with 5 MeV protons does not enhance T c, indicating that ferroelectric interactionsmore » do not compete with superconductivity.« less

Superconductivity, pairing symmetry, and disorder in the doped topological insulator Sn 1 - x In x Te for x ≥ 0.10

DOE Office of Scientific and Technical Information (OSTI.GOV)

Smylie, M. P.; Claus, H.; Kwok, W. -K.

The temperature dependence of the London penetration depth Δλ(T) in the superconducting doped topological crystalline insulator Sn 1-xIn x Te was measured down to 450 mK for two different doping levels, x ≈ 0.45 (optimally doped) and x ≈ 0.10 (underdoped), bookending the range of cubic phase in the compound. The results indicate no deviation from fully gapped BCS-like behavior, eliminating several candidate unconventional gap structures. Critical field values below 1 K and other superconducting parameters are also presented. The introduction of disorder by repeated particle irradiation with 5 MeV protons does not enhance T c, indicating that ferroelectric interactionsmore » do not compete with superconductivity.« less

Superconductivity, Pairing Symmetry, and Disorder in the Doped Topological Insulator Sn 1-xIn xTe for x >= 0.10.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Smylie, M. P.; Claus, H.; Kwok, W. -K.

The temperature dependence of the London penetration depth Delta lambda(T) in the superconducting doped topological crystalline insulator Sn1-xInxTe was measured down to 450 mK for two different doping levels, x approximate to 0.45 (optimally doped) and x approximate to 0.10 (underdoped), bookending the range of cubic phase in the compound. The results indicate no deviation from fully gapped BCS-like behavior, eliminating several candidate unconventional gap structures. Critical field values below 1 K and other superconducting parameters are also presented. The introduction of disorder by repeated particle irradiation with 5 MeV protons does not enhance T-c, indicating that ferroelectric interactions domore » not compete with superconductivity.« less

Influence of Co doping on combined photocatalytic and antibacterial activity of ZnO nanoparticles

NASA Astrophysics Data System (ADS)

Anandan, M.; Dinesh, S.; Krishnakumar, N.; Balamurugan, K.

2016-11-01

The present work aims to investigate the structural, optical, photocatalyst and antibacterial properties of bare and cobalt doped ZnO nanoparticles (NPs) with different concentrations Zn1-x Co x O (x = 0, 0.03, 0.06 and 0.09) synthesized by co-precipitation method. The XRD patterns confirmed that all samples of cobalt doped ZnO nanostructures revealed the formation of single phase having hexagonal wurtzite structure with crystallite size in the range of 31-41 nm. Further, the decreasing trend in lattice parameters and grain sizes were also seen with increasing doping concentrations which confirms the incorporation of Co ions into the ZnO lattice. This result was further supported by the FT-IR data. HR-TEM images demonstrated the distinct hexagonal like morphology with small agglomeration. The UV-visible absorption spectra exhibits red shift with increase in Co doping concentration in ZnO while corresponding bandgap energy of cobalt doped ZnO NPs decreased with increased Co doping concentration. PL spectra showed a weak UV and visible emission band which may be ascribed to the reduction in oxygen vacancy and defects by cobalt doping. XPS and EDX spectral results confirm the composition and the purity of Co doped ZnO NPs. Furthermore, the Co doped ZnO NPs were found to exhibit lesser photocatalytic activity for the degradation of methyl green dye under UV light illumination in comparison with the bare ZnO NPs. Moreover, anti-bacterial studies reveals that the Co doped ZnO NPs possess more antibacterial effect against gram positive Basillus subtills and gram negative Klebsiella pneumoniae bacterial strains than the bare ZnO NPs.

Aluminum doping tunes band gap energy level as well as oxidative stress-mediated cytotoxicity of ZnO nanoparticles in MCF-7 cells

PubMed Central

Akhtar, Mohd Javed; Alhadlaq, Hisham A.; Alshamsan, Aws; Majeed Khan, M.A.; Ahamed, Maqusood

2015-01-01

We investigated whether Aluminum (Al) doping tunes band gap energy level as well as selective cytotoxicity of ZnO nanoparticles in human breast cancer cells (MCF-7). Pure and Al-doped ZnO nanoparticles were prepared by a simple sol-gel method. Characterization study confirmed the formation of single phase of AlxZn1-xO nanocrystals with the size range of 33–55 nm. Al-doping increased the band gap energy of ZnO nanoparticles (from 3.51 eV for pure to 3.87 eV for Al-doped ZnO). Al-doping also enhanced the cytotoxicity and oxidative stress response of ZnO nanoparticles in MCF-7 cells. The IC50 for undoped ZnO nanoparticles was 44 μg/ml while for the Al-doped ZnO counterparts was 31 μg/ml. Up-regulation of apoptotic genes (e.g. p53, bax/bcl2 ratio, caspase-3 & caspase-9) along with loss of mitochondrial membrane potential suggested that Al-doped ZnO nanoparticles induced apoptosis in MCF-7 cells through mitochondrial pathway. Importantly, Al-doping did not change the benign nature of ZnO nanoparticles towards normal cells suggesting that Al-doping improves the selective cytotoxicity of ZnO nanoparticles toward MCF-7 cells without affecting the normal cells. Our results indicated a novel approach through which the inherent selective cytotoxicity of ZnO nanoparticles against cancer cells can be further improved. PMID:26347142

Aluminum doping tunes band gap energy level as well as oxidative stress-mediated cytotoxicity of ZnO nanoparticles in MCF-7 cells

NASA Astrophysics Data System (ADS)

Akhtar, Mohd Javed; Alhadlaq, Hisham A.; Alshamsan, Aws; Majeed Khan, M. A.; Ahamed, Maqusood

2015-09-01

We investigated whether Aluminum (Al) doping tunes band gap energy level as well as selective cytotoxicity of ZnO nanoparticles in human breast cancer cells (MCF-7). Pure and Al-doped ZnO nanoparticles were prepared by a simple sol-gel method. Characterization study confirmed the formation of single phase of AlxZn1-xO nanocrystals with the size range of 33-55 nm. Al-doping increased the band gap energy of ZnO nanoparticles (from 3.51 eV for pure to 3.87 eV for Al-doped ZnO). Al-doping also enhanced the cytotoxicity and oxidative stress response of ZnO nanoparticles in MCF-7 cells. The IC50 for undoped ZnO nanoparticles was 44 μg/ml while for the Al-doped ZnO counterparts was 31 μg/ml. Up-regulation of apoptotic genes (e.g. p53, bax/bcl2 ratio, caspase-3 & caspase-9) along with loss of mitochondrial membrane potential suggested that Al-doped ZnO nanoparticles induced apoptosis in MCF-7 cells through mitochondrial pathway. Importantly, Al-doping did not change the benign nature of ZnO nanoparticles towards normal cells suggesting that Al-doping improves the selective cytotoxicity of ZnO nanoparticles toward MCF-7 cells without affecting the normal cells. Our results indicated a novel approach through which the inherent selective cytotoxicity of ZnO nanoparticles against cancer cells can be further improved.

Aluminum doping tunes band gap energy level as well as oxidative stress-mediated cytotoxicity of ZnO nanoparticles in MCF-7 cells.

PubMed

Akhtar, Mohd Javed; Alhadlaq, Hisham A; Alshamsan, Aws; Majeed Khan, M A; Ahamed, Maqusood

2015-09-08

We investigated whether Aluminum (Al) doping tunes band gap energy level as well as selective cytotoxicity of ZnO nanoparticles in human breast cancer cells (MCF-7). Pure and Al-doped ZnO nanoparticles were prepared by a simple sol-gel method. Characterization study confirmed the formation of single phase of Al(x)Zn(1-x)O nanocrystals with the size range of 33-55 nm. Al-doping increased the band gap energy of ZnO nanoparticles (from 3.51 eV for pure to 3.87 eV for Al-doped ZnO). Al-doping also enhanced the cytotoxicity and oxidative stress response of ZnO nanoparticles in MCF-7 cells. The IC50 for undoped ZnO nanoparticles was 44 μg/ml while for the Al-doped ZnO counterparts was 31 μg/ml. Up-regulation of apoptotic genes (e.g. p53, bax/bcl2 ratio, caspase-3 &caspase-9) along with loss of mitochondrial membrane potential suggested that Al-doped ZnO nanoparticles induced apoptosis in MCF-7 cells through mitochondrial pathway. Importantly, Al-doping did not change the benign nature of ZnO nanoparticles towards normal cells suggesting that Al-doping improves the selective cytotoxicity of ZnO nanoparticles toward MCF-7 cells without affecting the normal cells. Our results indicated a novel approach through which the inherent selective cytotoxicity of ZnO nanoparticles against cancer cells can be further improved.

Polycrystalline ZrTe 5 Parametrized as a Narrow-Band-Gap Semiconductor for Thermoelectric Performance

DOE PAGES

Miller, Samuel A.; Witting, Ian; Aydemir, Umut; ...

2018-01-24

The transition-metal pentatellurides HfTe 5 and ZrTe 5 have been studied for their exotic transport properties with much debate over the transport mechanism, band gap, and cause of the resistivity behavior, including a large low-temperature resistivity peak. Single crystals grown by the chemical-vapor-transport method have shown an n-p transition of the Seebeck coefficient at the same temperature as a peak in the resistivity. We show that behavior similar to that of single crystals can be observed in iodine-doped polycrystalline samples but that undoped polycrystalline samples exhibit drastically different properties: they are p type over the entire temperature range. Additionally, themore » thermal conductivity for polycrystalline samples is much lower, 1.5 Wm -1 K -1, than previously reported for single crystals. It is found that the polycrystalline ZrTe 5 system can be modeled as a simple semiconductor with conduction and valence bands both contributing to transport, separated by a band gap of 20 meV. This model demonstrates to first order that a simple two-band model can explain the transition from n- to p-type behavior and the cause of the anomalous resistivity peak. Combined with the experimental data, the two-band model shows that carrier concentration variation is responsible for differences in behavior between samples. Using the two-band model, the thermoelectric performance at different doping levels is predicted, finding zT=0.2 and 0.1 for p and n type, respectively, at 300 K, and zT=0.23 and 0.32 for p and n type at 600 K. Given the reasonably high zT that is comparable in magnitude for both n and p type, a thermoelectric device with a single compound used for both legs is feasible.« less

Polycrystalline ZrTe5 Parametrized as a Narrow-Band-Gap Semiconductor for Thermoelectric Performance

NASA Astrophysics Data System (ADS)

Miller, Samuel A.; Witting, Ian; Aydemir, Umut; Peng, Lintao; Rettie, Alexander J. E.; Gorai, Prashun; Chung, Duck Young; Kanatzidis, Mercouri G.; Grayson, Matthew; Stevanović, Vladan; Toberer, Eric S.; Snyder, G. Jeffrey

2018-01-01

The transition-metal pentatellurides HfTe5 and ZrTe5 have been studied for their exotic transport properties with much debate over the transport mechanism, band gap, and cause of the resistivity behavior, including a large low-temperature resistivity peak. Single crystals grown by the chemical-vapor-transport method have shown an n -p transition of the Seebeck coefficient at the same temperature as a peak in the resistivity. We show that behavior similar to that of single crystals can be observed in iodine-doped polycrystalline samples but that undoped polycrystalline samples exhibit drastically different properties: they are p type over the entire temperature range. Additionally, the thermal conductivity for polycrystalline samples is much lower, 1.5 Wm-1 K-1 , than previously reported for single crystals. It is found that the polycrystalline ZrTe5 system can be modeled as a simple semiconductor with conduction and valence bands both contributing to transport, separated by a band gap of 20 meV. This model demonstrates to first order that a simple two-band model can explain the transition from n - to p -type behavior and the cause of the anomalous resistivity peak. Combined with the experimental data, the two-band model shows that carrier concentration variation is responsible for differences in behavior between samples. Using the two-band model, the thermoelectric performance at different doping levels is predicted, finding z T =0.2 and 0.1 for p and n type, respectively, at 300 K, and z T =0.23 and 0.32 for p and n type at 600 K. Given the reasonably high z T that is comparable in magnitude for both n and p type, a thermoelectric device with a single compound used for both legs is feasible.

Polycrystalline ZrTe{sub 5} Parameterized as a Narrow Band Gap Semiconductor for Thermoelectric Performance.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miller, Samuel A.; Witting, Ian; Aydemir, Umut

The transition-metal pentatellurides HfTe5 and ZrTe5 have been studied for their exotic transport properties with much debate over the transport mechanism, band gap, and cause of the resistivity behavior, including a large low-temperature resistivity peak. Single crystals grown by the chemical-vapor-transport method have shown an n-p transition of the Seebeck coefficient at the same temperature as a peak in the resistivity. We show that behavior similar to that of single crystals can be observed in iodine-doped polycrystalline samples but that undoped polycrystalline samples exhibit drastically different properties: they are p type over the entire temperature range. Additionally, the thermal conductivitymore » for polycrystalline samples is much lower, 1.5 Wm -1 K -1, than previously reported for single crystals. It is found that the polycrystalline ZrTe 5 system can be modeled as a simple semiconductor with conduction and valence bands both contributing to transport, separated by a band gap of 20 meV. This model demonstrates to first order that a simple two-band model can explain the transition from n- to p-type behavior and the cause of the anomalous resistivity peak. Combined with the experimental data, the two-band model shows that carrier concentration variation is responsible for differences in behavior between samples. Using the twoband model, the thermoelectric performance at different doping levels is predicted, finding zT =0.2 and 0.1 for p and n type, respectively, at 300 K, and zT= 0.23 and 0.32 for p and n type at 600 K. Given the reasonably high zT that is comparable in magnitude for both n and p type, a thermoelectric device with a single compound used for both legs is feasible.« less

Polycrystalline ZrTe 5 Parametrized as a Narrow-Band-Gap Semiconductor for Thermoelectric Performance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miller, Samuel A.; Witting, Ian; Aydemir, Umut

The transition-metal pentatellurides HfTe 5 and ZrTe 5 have been studied for their exotic transport properties with much debate over the transport mechanism, band gap, and cause of the resistivity behavior, including a large low-temperature resistivity peak. Single crystals grown by the chemical-vapor-transport method have shown an n-p transition of the Seebeck coefficient at the same temperature as a peak in the resistivity. We show that behavior similar to that of single crystals can be observed in iodine-doped polycrystalline samples but that undoped polycrystalline samples exhibit drastically different properties: they are p type over the entire temperature range. Additionally, themore » thermal conductivity for polycrystalline samples is much lower, 1.5 Wm -1 K -1, than previously reported for single crystals. It is found that the polycrystalline ZrTe 5 system can be modeled as a simple semiconductor with conduction and valence bands both contributing to transport, separated by a band gap of 20 meV. This model demonstrates to first order that a simple two-band model can explain the transition from n- to p-type behavior and the cause of the anomalous resistivity peak. Combined with the experimental data, the two-band model shows that carrier concentration variation is responsible for differences in behavior between samples. Using the two-band model, the thermoelectric performance at different doping levels is predicted, finding zT=0.2 and 0.1 for p and n type, respectively, at 300 K, and zT=0.23 and 0.32 for p and n type at 600 K. Given the reasonably high zT that is comparable in magnitude for both n and p type, a thermoelectric device with a single compound used for both legs is feasible.« less

Magnetoresistance Versus Oxygen Deficiency in Epi-stabilized SrRu1 - x Fe x O3 - δ Thin Films

NASA Astrophysics Data System (ADS)

Dash, Umasankar; Acharya, Susant Kumar; Lee, Bo Wha; Jung, Chang Uk

2017-03-01

Oxygen vacancies have a profound effect on the magnetic, electronic, and transport properties of transition metal oxide materials. Here, we studied the influence of oxygen vacancies on the magnetoresistance (MR) properties of SrRu1 - x Fe x O3 - δ epitaxial thin films ( x = 0.10, 0.20, and 0.30). For this purpose, we synthesized highly strained epitaxial SrRu1 - x Fe x O3 - δ thin films with atomically flat surfaces containing different amounts of oxygen vacancies using pulsed laser deposition. Without an applied magnetic field, the films with x = 0.10 and 0.20 showed a metal-insulator transition, while the x = 0.30 thin film showed insulating behavior over the entire temperature range of 2-300 K. Both Fe doping and the concentration of oxygen vacancies had large effects on the negative MR contributions. For the low Fe doping case of x = 0.10, in which both films exhibited metallic behavior, MR was more prominent in the film with fewer oxygen vacancies or equivalently a more metallic film. For semiconducting films, higher MR was observed for more semiconducting films having more oxygen vacancies. A relatively large negative MR ( 36.4%) was observed for the x = 0.30 thin film with a high concentration of oxygen vacancies ( δ = 0.12). The obtained results were compared with MR studies for a polycrystal of (Sr1 - x La x )(Ru1 - x Fe x )O3. These results highlight the crucial role of oxygen stoichiometry in determining the magneto-transport properties in SrRu1 - x Fe x O3 - δ thin films.

Combination of cathodic reduction with adsorption for accelerated removal of Cr(VI) through reticulated vitreous carbon electrodes modified with sulfuric acid-glycine co-doped polyaniline.

PubMed

Mo, Xi; Yang, Zhao-hui; Xu, Hai-yin; Zeng, Guang-ming; Huang, Jing; Yang, Xia; Song, Pei-pei; Wang, Li-ke

2015-04-09

Improving the reduction kinetics is crucial in the electroreduction process of Cr(VI). In this study, we developed a novel adsorption-electroreduction system for accelerated removal of Cr(VI) by employing reticulated vitreous carbon electrode modified with sulfuric acid-glycine co-doped polyaniline (RVC/PANI-SA-GLY). Firstly, response surface methodology confirmed the optimum polymerization condition of co-doped polyaniline for modifying electrodes (Aniline, sulfuric acid and glycine, respectively, of 0.2 mol/L, 0.85 mol/L, 0.93 mol/L) when untraditional dopant glycine was added. Subsequently, RVC/PANI-SA-GLY showed higher Cr(VI) removal percentages in electroreduction experiments over RVC electrode modified with sulfuric acid doped polyaniline (RVC/PANI-SA) and bare RVC electrode. In contrast to RVC/PANI-SA, the improvement by RVC/PANI-SA-GLY was more significant and especially obvious at more negative potential, lower initial Cr(VI) concentration, relatively less acidic solution and higher current densities, best achieving 7.84% higher removal efficiency with entire Cr(VI) eliminated after 900 s. Current efficiencies were likewise enhanced by RVC/PANI-SA-GLY under quite negative potentials. Fourier transform infrared (FTIR) and energy dispersive spectrometer (EDS) analysis revealed a possible adsorption-reduction mechanism of RVC/PANI-SA-GLY, which greatly contributed to the faster reduction kinetics and was probably relative to the absorption between protonated amine groups of glycine and HCrO4(-). Eventually, the stability of RVC/PANI-SA-GLY was proven relatively satisfactory. Copyright © 2015 Elsevier B.V. All rights reserved.

Colloidal Synthesis of Te-Doped Bi Nanoparticles: Low-Temperature Charge Transport and Thermoelectric Properties.

PubMed

Gu, Da Hwi; Jo, Seungki; Jeong, Hyewon; Ban, Hyeong Woo; Park, Sung Hoon; Heo, Seung Hwae; Kim, Fredrick; Jang, Jeong In; Lee, Ji Eun; Son, Jae Sung

2017-06-07

Electronically doped nanoparticles formed by incorporation of impurities have been of great interest because of their controllable electrical properties. However, the development of a strategy for n-type or p-type doping on sub-10 nm-sized nanoparticles under the quantum confinement regime is very challenging using conventional processes, owing to the difficulty in synthesis. Herein, we report the colloidal chemical synthesis of sub-10 nm-sized tellurium (Te)-doped Bismuth (Bi) nanoparticles with precisely controlled Te content from 0 to 5% and systematically investigate their low-temperature charge transport and thermoelectric properties. Microstructural characterization of nanoparticles demonstrates that Te ions are successfully incorporated into Bi nanoparticles rather than remaining on the nanoparticle surfaces. Low-temperature Hall measurement results of the hot-pressed Te-doped Bi-nanostructured materials, with grain sizes ranging from 30 to 60 nm, show that the charge transport properties are governed by the doping content and the related impurity and nanoscale grain boundary scatterings. Furthermore, the low-temperature thermoelectric properties reveal that the electrical conductivity and Seebeck coefficient expectedly change with the Te content, whereas the thermal conductivity is significantly reduced by Te doping because of phonon scattering at the sites arising from impurities and nanoscale grain boundaries. Accordingly, the 1% Te-doped Bi sample exhibits a higher figure-of-merit ZT by ∼10% than that of the undoped sample. The synthetic strategy demonstrated in this study offers the possibility of electronic doping of various quantum-confined nanoparticles for diverse applications.

Nonequilibrium-Plasma-Synthesized ZnO Nanocrystals with Plasmon Resonance Tunable via Al Doping and Quantum Confinement.

PubMed

Greenberg, Benjamin L; Ganguly, Shreyashi; Held, Jacob T; Kramer, Nicolaas J; Mkhoyan, K Andre; Aydil, Eray S; Kortshagen, Uwe R

2015-12-09

Metal oxide semiconductor nanocrystals (NCs) exhibit localized surface plasmon resonances (LSPRs) tunable within the infrared (IR) region of the electromagnetic spectrum by vacancy or impurity doping. Although a variety of these NCs have been produced using colloidal synthesis methods, incorporation and activation of dopants in the liquid phase has often been challenging. Herein, using Al-doped ZnO (AZO) NCs as an example, we demonstrate the potential of nonthermal plasma synthesis as an alternative strategy for the production of doped metal oxide NCs. Exploiting unique, thoroughly nonequilibrium synthesis conditions, we obtain NCs in which dopants are not segregated to the NC surfaces and local doping levels are high near the NC centers. Thus, we achieve overall doping levels as high as 2 × 10(20) cm(-3) in NCs with diameters ranging from 12.6 to 3.6 nm, and for the first time experimentally demonstrate a clear quantum confinement blue shift of the LSPR energy in vacancy- and impurity-doped semiconductor NCs. We propose that doping of central cores and heavy doping of small NCs are achievable via nonthermal plasma synthesis, because chemical potential differences between dopant and host atoms-which hinder dopant incorporation in colloidal synthesis-are irrelevant when NC nucleation and growth proceed via irreversible interactions among highly reactive gas-phase ions and radicals and ligand-free NC surfaces. We explore how the distinctive nucleation and growth kinetics occurring in the plasma influences dopant distribution and activation, defect structure, and impurity phase formation.

Photocatalytic degradation of methylene blue on Sn-doped titania nanoparticles synthesized by solution combustion route

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bhange, P.D., E-mail: pallavi.ncl@gmail.com; Awate, S.V.; Gholap, R.S.

2016-04-15

Highlights: • Series of Sn-doped titania nanoparticles were prepared by solution combustion synthesis method. • Sn-doped titania nanoparticles were tested for degradation of MB under UV light irradiation. • The maximum Sn doping in the TiO{sub 2} lattice is found to be less than 10%. • The crystallite size decreases with increase in the Sn content. • The doping of Sn into TiO{sub 2} lattice hinders the recombination of electrons and holes thus enhance the photocatalytic activity. - Abstract: Series of tin-doped titania nanoparticles with varying tin content in the range 0–20 mol% have been prepared by solution combustion synthesismore » route using urea as a fuel. The structure, surface morphology and optical activity of Sn-doped TiO{sub 2} nanoparticles were investigated by various analytical techniques such as powder XRD, SEM, TEM, UV–vis and N{sub 2} adsorption study. The crystalline structures of the various phases were studied by rietveld refinement of the XRD data. The photocatalytic performance of Sn-doped titania nanoparticles were tested for degradation of MB under UV and visible light irradiation. The results reveal that the photocatalytic activity increases with increase in tin content which may be due to decrease in crystallite size with increase in surface area. The doping of Sn into TiO{sub 2} lattice hinders the recombination of electrons and holes thus enhance the quantum efficiency of photocatalytic reaction.« less

X-Ray Absorption Spectroscopy Studies of the Atomic Structure of Zirconium-Doped Lithium Silicate Glasses and Glass-Ceramics, Zirconium-Doped Lithium Borate Glasses, and Vitreous Rare-Earth Phosphates

NASA Astrophysics Data System (ADS)

Yoo, Changhyeon

In the first part of this work, the atomic-scale structure around rare-earth (RE = Pr, Nd, Eu, Dy, and Er) cations (RE3+) in rare-earth sodium ultraphosphate (REUP) glasses were investigated using RE LIII -edge (RE = Nd, Er, Dy, and Eu) and K-edge (RE = Pr and Dy) Extended X-ray Absorption Fine Structure (EXAFS) spectroscopy. (RE2O 3)x(Na2O)y(P2O5) 1-x-y glasses in the compositional range 0 ≤ x ≤ 0.14 and 0.3 ≤ x + y ≤ 0.4 were studied. For the nearest oxygen shell, the RE-oxygen (RE-O) coordination number decreases from 10.8 to 6.5 with increasing RE content for Pr-, Nd-, Dy-, and Er-doped sodium ultraphosphate glasses. For Eu-doped samples, the Eu-O coordination number was between 7.5 and 8.8. Also, the RE-O mean distance ranges were between 2.43-2.45 A, 2.40-2.43 A, 2.36-2.38 A, 2.30-2.35 A, and 2.28-2.30 A for Pr-, Nd-, Eu-, Dy-, and Er-doped samples, respectively. In the second part, a series of Zr-doped (3-10 mol%) lithium silicate (ZRLS) glass-ceramics and their parent glasses and a series of Zr-doped (2-6 mol% ZrO2) lithium borate (ZRLB) glasses were investigated using Zr K-edge EXAFS and X-ray Absorption Near Edge Structure (XANES) spectroscopy. Immediate coordination environments of all ZRLS glasses are remarkably similar for different compositions. For the nearest oxygen shell, the Zr-O coordination number ranges were between 6.1 and 6.3 for nucleated and crystallized samples, respectively. Also, the Zr-O mean distance remains similar around 2.10 A. For these glasses, the composition dependence of structural parameters was small. Small changes in the coordination environment were observed for ZRLS glass-ceramics after thermal treatments. In contrast, Zr coordination environment in ZRLB glasses appear to depend appreciably on the Zr concentration. For the nearest oxygen shell, the Zr-O coordination number increased from 6.1 to 6.8 and the Zr-O distance decreased from 2.18 A to 2.14 A with decreasing ZrO2 content.

Demonstration of Al:ZnO as a plasmonic component for near-infrared metamaterials

PubMed Central

Naik, Gururaj V.; Liu, Jingjing; Kildishev, Alexander V.; Shalaev, Vladimir M.; Boltasseva, Alexandra

2012-01-01

Noble metals such as gold and silver are conventionally used as the primary plasmonic building blocks of optical metamaterials. Making subwavelength-scale structural elements from these metals not only seriously limits the optical performance of a device due to high absorption, it also substantially complicates the manufacturing process of nearly all metamaterial devices in the optical wavelength range. As an alternative to noble metals, we propose to use heavily doped oxide semiconductors that offer both functional and fabrication advantages in the near-infrared wavelength range. In this letter, we replace a metal with aluminum-doped zinc oxide as a new plasmonic material and experimentally demonstrate negative refraction in an Al:ZnO/ZnO metamaterial in the near-infrared range. PMID:22611188

Thermoelectric transport in surface- and antimony-doped bismuth telluride nanoplates

NASA Astrophysics Data System (ADS)

Pettes, Michael Thompson; Kim, Jaehyun; Wu, Wei; Bustillo, Karen C.; Shi, Li

2016-10-01

We report the in-plane thermoelectric properties of suspended (Bi1-xSbx)2Te3 nanoplates with x ranging from 0.07 to 0.95 and thicknesses ranging from 9 to 42 nm. The results presented here reveal a trend of increasing p-type behavior with increasing antimony concentration, and a maximum Seebeck coefficient and thermoelectric figure of merit at x ˜ 0.5. We additionally tuned extrinsic doping of the surface using a tetrafluoro-tetracyanoquinodimethane (F4-TCNQ) coating. The lattice thermal conductivity is found to be below that for undoped ultrathin Bi2Te3 nanoplates of comparable thickness and in the range of 0.2-0.7 W m-1 K-1 at room temperature.

Photochemical quenching of aqueous methylene blue by N, Nb co-doped TiO2 nanomaterials under visible light: a confirmatory UV/LC-MS study

NASA Astrophysics Data System (ADS)

Gupta, Kamini; Pandey, Ashutosh; Singh, R. P.

2017-12-01

Nanodimensional un-doped, Nb doped, N doped and N,Nb co-doped TiO2 particles have been prepared by the sol-gel procedure. Phase identification of the anatase particles was done by X-ray powder diffraction and Deby-Scherrer calculations revealed their particle sizes to range from 20 to 30 nm. The band gap energies of the samples were measured by UV-Vis-diffuse reflectance (UV-DRS) spectra. While un-doped TiO2 showed wide optical absorption in the UV region. The co-doped TiO2 particles exhibited narrow band gaps of ~2.7 eV, which showed absorption in the visible region. A decline in charge carrier recombination rates in the prepared samples was confirmed through photoluminescence (PL). The morphological appearances of the particles have been examined by scanning electron microscopy. X-ray photoelectron spectroscopy (XPS) of the samples confirmed the incorporations of N and Nb into the TiO2 matrices. The photocatalytic efficiencies of the prepared particles have been determined by the degradation of the non-biodegradable dye methylene blue (MB) under electromagnetic radiation. The co-doped sample showed superior photocatalytic activity under the visible light (λ  >  400) over the other samples. Photochemical quenching of aqueous MB was further analysed by UV/LC-MS which confirmed the attenuation of methylene blue.

Preparation of a Carbon Doped Tissue-Mimicking Material with High Dielectric Properties for Microwave Imaging Application

PubMed Central

Lan, Siang-Wen; Weng, Min-Hang; Yang, Ru-Yuan; Chang, Shoou-Jinn; Chung, Yaoh-Sien; Yu, Tsung-Chih; Wu, Chun-Sen

2016-01-01

In this paper, the oil-in-gelatin based tissue-mimicking materials (TMMs) doped with carbon based materials including carbon nanotube, graphene ink or lignin were prepared. The volume percent for gelatin based mixtures and oil based mixtures were both around 50%, and the doping amounts were 2 wt %, 4 wt %, and 6 wt %. The effect of doping material and amount on the microwave dielectric properties including dielectric constant and conductivity were investigated over an ultra-wide frequency range from 2 GHz to 20 GHz. The coaxial open-ended reflection technology was used to evaluate the microwave dielectric properties. Six measured values in different locations of each sample were averaged and the standard deviations of all the measured dielectric properties, including dielectric constant and conductivity, were less than one, indicating a good uniformity of the prepared samples. Without doping, the dielectric constant was equal to 23 ± 2 approximately. Results showed with doping of carbon based materials that the dielectric constant and conductivity both increased about 5% to 20%, and the increment was dependent on the doping amount. By proper selection of doping amount of the carbon based materials, the prepared material could map the required dielectric properties of special tissues. The proposed materials were suitable for the phantom used in the microwave medical imaging system. PMID:28773678

Study of nitrogen ion doping of titanium dioxide films

NASA Astrophysics Data System (ADS)

Ramos, Raul; Scoca, Diego; Borges Merlo, Rafael; Chagas Marques, Francisco; Alvarez, Fernando; Zagonel, Luiz Fernando

2018-06-01

This study reports on the properties of nitrogen doped titanium dioxide (TiO2) thin films considering the application as a transparent conducting oxide (TCO). Sets of thin films were prepared by sputtering a titanium target under oxygen atmosphere on a quartz substrate at 400 or 500 °C. Films were then doped at the same temperature by 150 eV nitrogen ions. The films were prepared in Anatase phase which was maintained after doping. Up to 30 at% nitrogen concentration was obtained at the surface, as determined by in situ X-ray photoelectron spectroscopy (XPS). Such high nitrogen concentration at the surface lead to nitrogen diffusion into the bulk which reached about 25 nm. Hall measurements indicate that average carrier density reached over 1019 cm-3 with mobility in the range of 0.1-1 cm2 V-1 s-1. Resistivity about 3 · 10-1 Ω cm could be obtained with 85% light transmission at 550 nm. These results indicate that low energy implantation is an effective technique for TiO2 doping that allows an accurate control of the doping process independently from the TiO2 preparation. Moreover, this doping route seems promising to attain high doping levels without significantly affecting the film structure. Such approach could be relevant for preparation of N:TiO2 transparent conducting electrodes (TCE).

Anomalous antibacterial activity and dye degradation by selenium doped ZnO nanoparticles.

PubMed

Dutta, Raj Kumar; Nenavathu, Bhavani Prasad; Talukdar, Soumita

2014-02-01

Selenium doped ZnO nanoparticles synthesized by mechanochemical method were spherically shaped of size distribution of 10.2±3.4 nm measured by transmission electron microscopy. Diffused reflectance spectroscopy revealed increase in the band gap, ranging between 3.47 eV and 3.63 eV due to Se doping in ZnO nanoparticles. The antibacterial activity of pristine and Se doped ZnO nanoparticles was attributed to ROS (reactive oxygen species) generation in culture media confirmed by TBARS assay. Compared to complete inhibition of growth by 0.45 mg/mL of pristine ZnO nanoparticles, the batches of 0.45 mg/mL of selenium doped ZnO nanoparticles exhibited only 51% inhibition of growth of Escherichia coli. The reduced antibacterial activity of selenium doped ZnO nanoparticles was attributed to two opposing factors, e.g., ROS generation for inhibition of growth, countered by sustaining growth of E. coli due to availability of Se micronutrients in culture media, confirmed by inductively coupled plasma mass spectrometer measurement. Higher ROS generation by selenium doped ZnO nanoparticles was attributed to creation of oxygen vacancies, confirmed from green emission peak observed at 565 nm. The impact of higher ROS generation by selenium doped ZnO nanoparticles was evident from enhanced photocatalytic degradation of trypan blue dye, than pristine ZnO nanoparticles. Copyright © 2013 Elsevier B.V. All rights reserved.

Effects of rare-earth co-doping on the local structure of rare-earth phosphate glasses using high and low energy X-ray diffraction.

PubMed

Cramer, Alisha J; Cole, Jacqueline M; FitzGerald, Vicky; Honkimaki, Veijo; Roberts, Mark A; Brennan, Tessa; Martin, Richard A; Saunders, George A; Newport, Robert J

2013-06-14

Rare-earth co-doping in inorganic materials has a long-held tradition of facilitating highly desirable optoelectronic properties for their application to the laser industry. This study concentrates specifically on rare-earth phosphate glasses, (R2O3)x(R'2O3)y(P2O5)(1-(x+y)), where (R, R') denotes (Ce, Er) or (La, Nd) co-doping and the total rare-earth composition corresponds to a range between metaphosphate, RP3O9, and ultraphosphate, RP5O14. Thereupon, the effects of rare-earth co-doping on the local structure are assessed at the atomic level. Pair-distribution function analysis of high-energy X-ray diffraction data (Q(max) = 28 Å(-1)) is employed to make this assessment. Results reveal a stark structural invariance to rare-earth co-doping which bears testament to the open-framework and rigid nature of these glasses. A range of desirable attributes of these glasses unfold from this finding; in particular, a structural simplicity that will enable facile molecular engineering of rare-earth phosphate glasses with 'dial-up' lasing properties. When considered together with other factors, this finding also demonstrates additional prospects for these co-doped rare-earth phosphate glasses in nuclear waste storage applications. This study also reveals, for the first time, the ability to distinguish between P-O and P[double bond, length as m-dash]O bonding in these rare-earth phosphate glasses from X-ray diffraction data in a fully quantitative manner. Complementary analysis of high-energy X-ray diffraction data on single rare-earth phosphate glasses of similar rare-earth composition to the co-doped materials is also presented in this context. In a technical sense, all high-energy X-ray diffraction data on these glasses are compared with analogous low-energy diffraction data; their salient differences reveal distinct advantages of high-energy X-ray diffraction data for the study of amorphous materials.

Al-, Y-, and La-doping effects favoring intrinsic and field induced ferroelectricity in HfO2: A first principles study

NASA Astrophysics Data System (ADS)

Materlik, Robin; Künneth, Christopher; Falkowski, Max; Mikolajick, Thomas; Kersch, Alfred

2018-04-01

III-valent dopants have shown to be most effective in stabilizing the ferroelectric, crystalline phase in atomic layer deposited, polycrystalline HfO2 thin films. On the other hand, such dopants are commonly used for tetragonal and cubic phase stabilization in ceramic HfO2. This difference in the impact has not been elucidated so far. The prospect is a suitable doping to produce ferroelectric HfO2 ceramics with a technological impact. In this paper, we investigate the impact of Al, Y, and La doping, which have experimentally proven to stabilize the ferroelectric Pca21 phase in HfO2, in a comprehensive first-principles study. Density functional theory calculations reveal the structure, formation energy, and total energy of various defects in HfO2. Most relevant are substitutional electronically compensated defects without oxygen vacancy, substitutional mixed compensated defects paired with a vacancy, and ionically compensated defect complexes containing two substitutional dopants paired with a vacancy. The ferroelectric phase is strongly favored with La and Y in the substitutional defect. The mixed compensated defect favors the ferroelectric phase as well, but the strongly favored cubic phase limits the concentration range for ferroelectricity. We conclude that a reduction of oxygen vacancies should significantly enhance this range in Y doped HfO2 thin films. With Al, the substitutional defect hardly favors the ferroelectric phase before the tetragonal phase becomes strongly favored with the increasing concentration. This could explain the observed field induced ferroelectricity in Al-doped HfO2. Further Al defects are investigated, but do not favor the f-phase such that the current explanation remains incomplete for Al doping. According to the simulation, doping alone shows clear trends, but is insufficient to replace the monoclinic phase as the ground state. To explain this fact, some other mechanism is needed.

Phase stability and lattice thermal conductivity reduction in CoSb{sub 3} skutterudites, doped with chalcogen atoms

DOE Office of Scientific and Technical Information (OSTI.GOV)

Battabyal, M., E-mail: manjusha.battabyal@project.arci.res.in; Priyadarshini, B.; Gopalan, R.

We report a significant reduction in the lattice thermal conductivity of the CoSb{sub 3} skuttertudites, doped with chalcogen atoms. Te/Se chalcogen atoms doped CoSb{sub 3} skutterudite samples (Te{sub 0.1}Co{sub 4}Sb{sub 12}, Se{sub 0.1}Co{sub 4}Sb{sub 12}, Te{sub 0.05}Se{sub 0.05}Co{sub 4}Sb{sub 12}) are processed by ball milling and spark plasma sintering. X-ray diffraction data combined with energy dispersive X-ray spectra indicate the doping of Te/Se chalcogen atoms in the skutterudite. The temperature dependent X-ray diffraction confirms the stability of the Te/Se doped CoSb{sub 3} skutterudite phase and absence of any secondary phase in the temperature range starting from 300 K to 773more » K. The Raman spectroscopy reveals that different chalcogen dopant atoms cause different resonant optical vibrational modes between the dopant atom and the host CoSb{sub 3} skutterudite lattice. These optical vibrational modes do scatter heat carrying acoustic phonons in a different spectral range. It was found that among the Te/Se chalcogen atoms, Te atoms alter the host CoSb{sub 3} skutterudite lattice vibrations to a larger extent than Se atoms, and can potentially scatter more Sb related acoustic phonons. The Debye model of lattice thermal conductivity confirms that the resonant phonon scattering has important contributions to the reduction of lattice thermal conductivity in CoSb{sub 3} skutterudites doped with Te/Se chalcogen atoms. Lattice thermal conductivity ∼ 0.9 W/mK at 773 K is achieved in Te{sub 0.1}Co{sub 4}Sb{sub 12} skutterudites, which is the lowest value reported so far in CoSb{sub 3} skutterudites, doped with single Te chalcogen atom.« less

Non-catalytic hydrogenation of VO2 in acid solution.

PubMed

Chen, Yuliang; Wang, Zhaowu; Chen, Shi; Ren, Hui; Wang, Liangxin; Zhang, Guobin; Lu, Yalin; Jiang, Jun; Zou, Chongwen; Luo, Yi

2018-02-26

Hydrogenation is an effective way to tune the property of metal oxides. It can conventionally be performed by doping hydrogen into solid materials with noble-metal catalysis, high-temperature/pressure annealing treatment, or high-energy proton implantation in vacuum condition. Acid solution naturally provides a rich proton source, but it should cause corrosion rather than hydrogenation to metal oxides. Here we report a facile approach to hydrogenate monoclinic vanadium dioxide (VO 2 ) in acid solution at ambient condition by placing a small piece of low workfunction metal (Al, Cu, Ag, Zn, or Fe) on VO 2 surface. It is found that the attachment of a tiny metal particle (~1.0 mm) can lead to the complete hydrogenation of an entire wafer-size VO 2 (>2 inch). Moreover, with the right choice of the metal a two-step insulator-metal-insulator phase modulation can even be achieved. An electron-proton co-doping mechanism has been proposed and verified by the first-principles calculations.

Electrospun amplified fiber optics.

PubMed

Morello, Giovanni; Camposeo, Andrea; Moffa, Maria; Pisignano, Dario

2015-03-11

All-optical signal processing is the focus of much research aiming to obtain effective alternatives to existing data transmission platforms. Amplification of light in fiber optics, such as in Erbium-doped fiber amplifiers, is especially important for efficient signal transmission. However, the complex fabrication methods involving high-temperature processes performed in a highly pure environment slow the fabrication process and make amplified components expensive with respect to an ideal, high-throughput, room temperature production. Here, we report on near-infrared polymer fiber amplifiers working over a band of ∼20 nm. The fibers are cheap, spun with a process entirely carried out at room temperature, and shown to have amplified spontaneous emission with good gain coefficients and low levels of optical losses (a few cm(-1)). The amplification process is favored by high fiber quality and low self-absorption. The found performance metrics appear to be suitable for short-distance operations, and the large variety of commercially available doping dyes might allow for effective multiwavelength operations by electrospun amplified fiber optics.

Quantum oscillations and nodal pockets from Fermi surface reconstruction in the underdoped cuprates

NASA Astrophysics Data System (ADS)

Harrison, Neil

2012-02-01

Fermiology in the underdoped high Tc cuprates presents us with unique challenges, requiring experimentalists to look deeper into the data than is normally required for clues. Recent measurements of an oscillatory chemical potential affecting the oscillations at high magnetic fields provide a strong indication of a single type of carrier pocket. When considered in conjunction with photoemission and specific heat measurements, a Fermi surface comprised almost entirely of nodal pockets is suggested. The mystery of the Fermi surface is deepened, however, by a near doping-independent Fermi surface cross-sectional area and negative Hall and Seebeck coefficients. We explore ways in which these findings can be reconciled, taking an important hint from the diverging effective mass yielded by quantum oscillations at low dopings. The author wishes to thank Suchitra Sebastian, Moaz Atarawneh, Doug Bonn, Walter Hardy, Ruixing Liang, Charles Mielke and Gilbert Lonzarich who have contributed to this work. The work is supported by the NSF through the NHMFL and by the DOE project ``Science at 100 tesla.''

Axially engineered metal-insulator phase transition by graded doping VO2 nanowires.

PubMed

Lee, Sangwook; Cheng, Chun; Guo, Hua; Hippalgaonkar, Kedar; Wang, Kevin; Suh, Joonki; Liu, Kai; Wu, Junqiao

2013-03-27

The abrupt first-order metal-insulator phase transition in single-crystal vanadium dioxide nanowires (NWs) is engineered to be a gradual transition by axially grading the doping level of tungsten. We also demonstrate the potential of these NWs for thermal sensing and actuation applications. At room temperature, the graded-doped NWs show metal phase on the tips and insulator phase near the center of the NW, and the metal phase grows progressively toward the center when the temperature rises. As such, each individual NW acts as a microthermometer that can be simply read out with an optical microscope. The NW resistance decreases gradually with the temperature rise, eventually reaching 2 orders of magnitude drop, in stark contrast to the abrupt resistance change in undoped VO2 wires. This novel phase transition yields an extremely high temperature coefficient of resistivity ~10%/K, simultaneously with a very low resistivity down to 0.001 Ω·cm, making these NWs promising infrared sensing materials for uncooled microbolometers. Lastly, they form bimorph thermal actuators that bend with an unusually high curvature, ~900 m(-1)·K(-1) over a wide temperature range (35-80 °C), significantly broadening the response temperature range of previous VO2 bimorph actuators. Given that the phase transition responds to a diverse range of stimuli-heat, electric current, strain, focused light, and electric field-the graded-doped NWs may find wide applications in thermo-opto-electro-mechanical sensing and energy conversion.

TiO(2) doping by hydroxyurea at the nucleation stage: towards a new photocatalyst in the visible spectral range.

PubMed

Azouani, R; Tieng, S; Chhor, K; Bocquet, J-F; Eloy, P; Gaigneaux, E M; Klementiev, K; Kanaev, A V

2010-10-07

We report an original method of preparation of OCN-doped TiO(2) for photocatalysis in the visible spectral range. The preparation is achieved by a sol-gel route using titanium tetraisopropoxide precursor. Special attention was paid to fluid micromixing, which enables homogeneous reaction conditions in the reactor bulk and monodispersity of the produced clusters/nanoparticles. The dopant hydroxyurea (HyU, CH(4)N(2)O(2)) is injected into the reactive fluid at the nucleation stage, which lasts tens of milliseconds. The doping results in a strong yellow coloration of the nanocolloids due to the absorption band in the spectral range 380-550 nm and accelerates the aggregation kinetics of both nuclei at the induction stage and sub-nuclei units (clusters) at the nucleation stage. FTIR, Raman and UV-visible absorption analyses show the formation of a stable HyU-TiO(2) complex. EXAFS spectra indicate no appreciable changes of the first-shell Ti atom environment. The doping agent takes available surface sites of TiO(2) clusters/nanoparticles attaining ∼10% molar loading. The reaction kinetics then accelerates due to a longer collisional lifetime between nanoparticles induced by the formation of a weak [double bond, length as m-dash]OTi bond. The OCN-group bonding to titanium atoms produces a weakening of the C[double bond, length as m-dash]O double bond and a strengthening of the C-N and N-O bonds.

Magnetic order close to superconductivity in the iron-based layered LaO1-xFxFeAs systems

NASA Astrophysics Data System (ADS)

de La Cruz, Clarina; Huang, Q.; Lynn, J. W.; Li, Jiying; , W. Ratcliff, II; Zarestky, J. L.; Mook, H. A.; Chen, G. F.; Luo, J. L.; Wang, N. L.; Dai, Pengcheng

2008-06-01

Following the discovery of long-range antiferromagnetic order in the parent compounds of high-transition-temperature (high-Tc) copper oxides, there have been efforts to understand the role of magnetism in the superconductivity that occurs when mobile `electrons' or `holes' are doped into the antiferromagnetic parent compounds. Superconductivity in the newly discovered rare-earth iron-based oxide systems ROFeAs (R, rare-earth metal) also arises from either electron or hole doping of their non-superconducting parent compounds. The parent material LaOFeAs is metallic but shows anomalies near 150K in both resistivity and d.c. magnetic susceptibility. Although optical conductivity and theoretical calculations suggest that LaOFeAs exhibits a spin-density-wave (SDW) instability that is suppressed by doping with electrons to induce superconductivity, there has been no direct evidence of SDW order. Here we report neutron-scattering experiments that demonstrate that LaOFeAs undergoes an abrupt structural distortion below 155K, changing the symmetry from tetragonal (space group P4/nmm) to monoclinic (space group P112/n) at low temperatures, and then, at ~137K, develops long-range SDW-type antiferromagnetic order with a small moment but simple magnetic structure. Doping the system with fluorine suppresses both the magnetic order and the structural distortion in favour of superconductivity. Therefore, like high-Tc copper oxides, the superconducting regime in these iron-based materials occurs in close proximity to a long-range-ordered antiferromagnetic ground state.

Alternating gradient photodetector

NASA Technical Reports Server (NTRS)

Overhauser, Albert W. (Inventor); Maserjian, Joseph (Inventor)

1989-01-01

A far infrared (FIR) range responsive photodetector is disclosed. There is a substrate of degenerate germanium. A plurality of alternating impurity-band and high resistivity layers of germanium are disposed on the substrate. The impurity-band layers have a doping concentration therein sufficiently high to include donor bands which can release electrons upon impingement by FIR photons of energy hv greater than an energy gap epsilon. The high resistivity layers have a doping concentration therein sufficiently low as to not include conducting donor bands and are depleted of electrons. Metal contacts are provided for applying an electrical field across the substrate and the plurality of layers. In the preferred embodiment as shown, the substrate is degenerate n-type (N++) germanium; the impurity-band layers are n+ layers of germanium doped to approximately the low 10(exp 16)/cu cm range; and, the high resistivity layers are n-layers of germanium doped to a maximum of approximately 10(exp)/cu cm. Additionally, the impurity-band layers have a thickness less than a conduction-electron diffusion length in germanium and likely to be in the range of 0.1 to 1.0 micron, the plurality of impurity-bands is of a number such that the flux of FIR photons passing therethrough will be substantially totally absorbed therein, the thickness of the high resistivity layers is such compared to the voltage applied that the voltage drop in each the high resistivity layers controls the occurence of impact ionization in the impurity-band layers to a desired level.

Active metal oxides and polymer hybrids as biomaterials

NASA Astrophysics Data System (ADS)

Jarrell, John D.

Bone anchored prosthetic attachments, like other percutaneous devices, suffer from poor soft tissue integration, seen as chronic inflammation, infection, epithelial downgrowth and regression. We looked at the use of metal oxides as bioactive agents that elicit different bioresponses, ranging from cell attachment, tissue integration and reduction of inflammation to modulation of cell proliferation, morphology and microbe killing. This study presents a novel method for creating titanium oxide and polydimethylsiloxane (PDMS) hybrid coated microplates for high throughput biological, bacterial and photocatalytic screening that overcomes several limitations of using bulk metal samples. Titanium oxide coatings were doped with silver, zinc, vanadium, aluminum, calcium and phosphorous, while PDMS was doped with titanium, vanadium and silver and subjected to hydrothermal heat treatment to determine the influence of chemistry and crystallinity on the viability, proliferation and adhesion of human fibroblasts, keratinocytes and Hela cells. Also explored was the influence of Ag and Zn doping on E. coli proliferation. We determined how titanium concentration in hybrids and silver doping influenced the photocatalytic degradation of methylene blue by coatings. A combined sub/percutaneous, polyurethane device was developed and implanted into the backs of CD hairless rats to investigate how optimized coatings influenced soft tissue integration in vivo. We demonstrate that the bioresponse of cells to coatings is controlled by elemental doping (V & Ag) and that planktonic bacterial growth was greatly reduced or stopped by Ag, but not Zn doping. Hydrothermal heat treatments (65 °C and 121 °C) did not greatly influence cellular bioresponse to coatings. We discovered a range of temperature resistant (up to 400 °C), solid state dispersions with enhanced ability to block full spectrum photon transmission and degrade methylene using medical x-rays, UV, visible and infrared photons. We show that silver doping improved the photoactivity of oxide coatings, but hindered activity of a specific hybrid. Doped titanium oxide and polymer hybrid coatings have potential for improving soft tissue integration of medical implants and wound healing by modulating cell proliferation, attachment, inflammation and providing controlled delivery of bioactive and antimicrobial compounds and photon induced electro-chemical activity.

Dosimetric properties of dysprosium doped lithium borate glass irradiated by 6 MV photons

NASA Astrophysics Data System (ADS)

Ab Rasid, A.; Wagiran, H.; Hashim, S.; Ibrahim, Z.; Ali, H.

2015-07-01

Undoped and dysprosium doped lithium borate glass system with empirical formula (70-x) B2O3-30 Li2O-(x) Dy2O3 (x=0.1, 0.3, 0.5, 0.7, 1.0 mol%) were prepared using the melt-quenching technique. The dosimetric measurements were performed by irradiating the samples to 6 MV photon beam using linear accelerator (LINAC) over a dose range of 0.5-5.0 Gy. The glass series of dysprosium doped lithium borate glass produced the best thermoluminescence (TL) glow curve with the highest intensity peak from sample with 1.0 mol% Dy2O3 concentration. Minimum detectable dose was detected at 2.24 mGy, good linearity of regression coefficient, high reproducibility and high sensitivity compared to the undoped glass are from 1.0 mol% dysprosium doped lithium borate glass. The results indicated that the series of dysprosium doped lithium glasses have a great potential to be considered as a thermoluminescence dosimetry (TLD).

Phosphorescent quantum dots/ethidium bromide nanohybrids based on photoinduced electron transfer for DNA detection.

PubMed

Bi, Lin; Yu, Yuan-Hua

2015-04-05

Mercaptopropionic acid-capped Mn-doped ZnS quantum dots/ethidium bromide (EB) nanohybrids were constructed for photoinduced electron transfer (PIET) and then used as a room-temperature phosphorescence (RTP) probe for DNA detection. EB could quench the RTP of Mn-doped ZnS QDs by PIET, thereby forming Mn-doped ZnS QDs/EB nanohybrids and storing RTP. Meanwhile, EB could be inserted into DNA and EB could be competitively desorbed from the surface of Mn-doped ZnS QDs by DNA, thereby releasing the RTP of Mn-doped ZnS QDs. Based on this mechanism, a RTP sensor for DNA detection was developed. Under optimal conditions, the detection limit for DNA was 0.045 mg L(-1), the relative standard deviation was 1.7%, and the method linear ranged from 0.2 to 20 mg L(-1). The proposed method was applied to biological fluids, in which satisfactory results were obtained. Copyright © 2015 Elsevier B.V. All rights reserved.

Effects of fabrication methods on spin relaxation and crystallite quality in Tm-doped ? powders studied using spectral hole burning

NASA Astrophysics Data System (ADS)

Lutz, Thomas; Veissier, Lucile; Thiel, Charles W.; Woodburn, Philip J. T.; Cone, Rufus L.; Barclay, Paul E.; Tittel, Wolfgang

2016-01-01

High-quality rare-earth-ion (REI) doped materials are a prerequisite for many applications such as quantum memories, ultra-high-resolution optical spectrum analyzers and information processing. Compared to bulk materials, REI doped powders offer low-cost fabrication and a greater range of accessible material systems. Here we show that crystal properties, such as nuclear spin lifetime, are strongly affected by mechanical treatment, and that spectral hole burning can serve as a sensitive method to characterize the quality of REI doped powders. We focus on the specific case of thulium doped ? (Tm:YAG). Different methods for obtaining the powders are compared and the influence of annealing on the spectroscopic quality of powders is investigated on a few examples. We conclude that annealing can reverse some detrimental effects of powder fabrication and, in certain cases, the properties of the bulk material can be reached. Our results may be applicable to other impurities and other crystals, including color centers in nano-structured diamond.

Benzene Adsorption on C24, Si@C24, Si-Doped C24, and C20 Fullerenes

NASA Astrophysics Data System (ADS)

Baei, Mohammad T.

2017-12-01

The absorption feasibility of benzene molecule in the C24, Si@C24, Si-doped C24, and C20 fullerenes has been studied based on calculated electronic properties of these fullerenes using Density functional Theory (DFT). It is found that energy of benzene adsorption on C24, Si@C24, and Si-doped C24 fullerenes were in range of -2.93 and -51.19 kJ/mol with little changes in their electronic structure. The results demonstrated that the C24, Si@C24, and Si-doped C24 fullerenes cannot be employed as a chemical adsorbent or sensor for benzene. Silicon doping cannot significantly modify both the electronic properties and benzene adsorption energy of C24 fullerene. On the other hand, C20 fullerene exhibits a high sensitivity, so that the energy gap of the fullerene is changed almost 89.19% after the adsorption process. We concluded that the C20 fullerene can be employed as a reliable material for benzene detection.

Microstructural and optical properties of Ca and Cr doped cobalt ferrite nanoparticles synthesized by auto combustion

NASA Astrophysics Data System (ADS)

Agrawal, Shraddha; Parveen, Azra; Azam, Ameer

2018-05-01

The Ca and Cr doped cobalt ferrite nanoparticles (Co0.8Ca0.2) (Fe0.8 Cr0.2)2O4 were synthesized by auto combustion method. Microstructural studies were carried out by X-ray diffraction (XRD). The crystalline size of synthesized nanoparticles as determined by the XRD was found to be 17.6 nm. These structural studies suggest that the crystal system remains spinal even with the doping of calcium and chromium. Optical properties of Ca and Cr doped cobalt ferrite were studied by UV-visible technique in the range of 200-800 nm. The energy band gap was calculated with the help of Tauc relationship. Ca and Cr doped cobalt ferrite annealed at 600°C exhibit significant dispersion in complex permeability. The dielectric constant and dielectric loss of cobalt ferrite were studied as a function of frequency and were explained on the basis of Koop's theory based on Maxwell Wagner two layer models and electron hopping.

Substitutional Cd and Cd-Oxygen Vacancy Complexes in ZrO2 and Ce-doped ZrO_2

NASA Astrophysics Data System (ADS)

Zacate, Matthew O.; Karapetrova, E.; Platzer, R.; Gardner, J. A.; Evenson, W. E.; Sommers, J. A.

1996-03-01

We are using Perturbed Angular Correlation Spectroscopy (PAC) to study oxygen vacancy (V_O) dynamics in tetragonal ZrO2 and Ce-doped ZrO_2. PAC requires a radioactive probe atom, Cd in this study, which sits substitutionally for a Zr ion. Cd is doubly-negatively charged relative to the lattice and attracts doubly-positively charged V_Os. Pure tetragonal zirconia exists only above 950 ^circC and in this temperature range, the V_Os are very mobile. Above 950 ^circC we observe V_Os rapidly hopping about the Cd allowing us to determine the VO concentration and the trapping energy. We have been Ce-doping to stabilize the tetragonal phase to lower temperature to determine the electric field gradient the Cd experiences due to a stationary V_O. As a consequence of the Ce-doping, we observe a local lattice distortion about the Cd which increases with Ce-doping.

Confidentiality, disclosure and doping in sports medicine.

PubMed

McNamee, M; Phillips, N

2011-03-01

The manner in which healthcare and medical professionals serve their athlete patients is governed by a variety of relevant codes of conduct. A range of codified rules is presented that refer both the welfare of the patient and the maintaining of confidentiality, which is at the heart of trustworthy relations. The 2009 version of the World Anti-Doping Code (WADC), however, appears to oblige all healthcare professionals not to assist athletes if they are known to be engaged in doping behaviours under fear of removal from working with athletes from the respective sports. In contrast, serving the best interests of their athlete patients may oblige healthcare professionals to give advice and guidance, not least in terms of harm minimisation. In so far as the professional conduct of a healthcare professional is guided both by professional code and World Anti-Doping Code, they are obliged to fall foul of one or the other. We call for urgent and pressing inter-professional dialogue with the World Anti-Doping Agency to clarify this situation.

A general quantitative pH sensor developed with dicyandiamide N-doped high quantum yield graphene quantum dots.

PubMed

Wu, Zhu Lian; Gao, Ming Xuan; Wang, Ting Ting; Wan, Xiao Yan; Zheng, Lin Ling; Huang, Cheng Zhi

2014-04-07

A general quantitative pH sensor for environmental and intracellular applications was developed by the facile hydrothermal preparation of dicyandiamide (DCD) N-doped high quantum yield (QY) graphene quantum dots (GQDs) using citric acid (CA) as the carbon source. The obtained N-doped GQDs have excellent photoluminesence (PL) properties with a relatively high QY of 36.5%, suggesting that N-doped chemistry could promote the QY of carbon nanomaterials. The possible mechanism for the formation of the GQDs involves the CA self-assembling into a nanosheet structure through intermolecular H-bonding at the initial stage of the reaction, and then the pure graphene core with many function groups formed through the dehydration between the carboxyl and hydroxyl of the intermolecules under hydrothermal conditions. These N-doped GQDs have low toxicity, and are photostable and pH-sensitive between 1.81 to 8.96, giving a general pH sensor with a wide range of applications from real water to intracellular contents.

Thermoelectric properties of doped BaHfO{sub 3}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dixit, Chandra Kr., E-mail: ckparadise@gmail.com, E-mail: sharmarameshfgiet@gmail.com; Bhamu, K. C.; Sharma, Ramesh, E-mail: ckparadise@gmail.com, E-mail: sharmarameshfgiet@gmail.com

2016-05-06

We have studied the structural stability, electronic structure, optical properties and thermoelectric properties of doped BaHfO{sub 3} by full potential linearized augmented plane wave (FP-LAPW) method. The electronic structure of BaHfO{sub 3} doped with Sr shows enhances the indirect band gaps of 3.53 eV, 3.58 eV. The charge density plots show strong ionic bonding in Ba-Hf, and ionic and covalent bonding between Hf and O. Calculations of the optical spectra, viz., the dielectric function, refractive index and extinction coefficient are performed for the energy range are calculated and analyzed. Thermoelectric properties of semi conducting are also reported first time. Themore » doped BaHfO{sub 3} is approximately wide band gap semiconductor with the large p-type Seebeck coefficient. The power factor of BaHfO{sub 3} is increased with Sr doping, decreases because of low electrical resistivity and thermal conductivity.« less

Transient carrier dynamics in a Mott insulator with antiferromagnetic order

NASA Astrophysics Data System (ADS)

Iyoda, Eiki; Ishihara, Sumio

2014-03-01

We study transient dynamics of hole carriers injected into a Mott insulator with antiferromagnetic long-range order. This "dynamical hole doping" contrasts with chemical hole doping. The theoretical framework for the transient carrier dynamics is presented based on the two-dimensional t-J model. The time dependencies of the optical conductivity spectra, as well as the one-particle excitation spectra, are calculated based on the Keldysh Green's function formalism at zero temperature combined with the self-consistent Born approximation. In the early stage after dynamical hole doping, the Drude component appears, and then incoherent components originating from hole-magnon scattering start to grow. Fast oscillatory behavior owing to coherent magnon and slow relaxation dynamics are confirmed in the spectra. The time profiles are interpreted as doped bare holes being dressed by magnon clouds and relaxed into spin polaron quasiparticle states. The characteristic relaxation times for Drude and incoherent peaks strongly depend on the momentum of the dynamically doped hole and the exchange constant. Implications for recent pump-probe experiments are discussed.

Operando spectroscopy study of the carbon dioxide electro-reduction by iron species on nitrogen-doped carbon.

PubMed

Genovese, Chiara; Schuster, Manfred E; Gibson, Emma K; Gianolio, Diego; Posligua, Victor; Grau-Crespo, Ricardo; Cibin, Giannantonio; Wells, Peter P; Garai, Debi; Solokha, Vladyslav; Krick Calderon, Sandra; Velasco-Velez, Juan J; Ampelli, Claudio; Perathoner, Siglinda; Held, Georg; Centi, Gabriele; Arrigo, Rosa

2018-03-05

The carbon-carbon coupling via electrochemical reduction of carbon dioxide represents the biggest challenge for using this route as platform for chemicals synthesis. Here we show that nanostructured iron (III) oxyhydroxide on nitrogen-doped carbon enables high Faraday efficiency (97.4%) and selectivity to acetic acid (61%) at very-low potential (-0.5 V vs silver/silver chloride). Using a combination of electron microscopy, operando X-ray spectroscopy techniques and density functional theory simulations, we correlate the activity to acetic acid at this potential to the formation of nitrogen-coordinated iron (II) sites as single atoms or polyatomic species at the interface between iron oxyhydroxide and the nitrogen-doped carbon. The evolution of hydrogen is correlated to the formation of metallic iron and observed as dominant reaction path over iron oxyhydroxide on oxygen-doped carbon in the overall range of negative potential investigated, whereas over iron oxyhydroxide on nitrogen-doped carbon it becomes important only at more negative potentials.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Elimelech, Orian; Liu, Jing; Plonka, Anna M.

Doping of nanocrystals (NCs) is a key, yet underexplored, approach for tuning of the electronic properties of semiconductors. An important route for doping of NCs is by vacancy formation. The size and concentration dependence of doping was studied in copper(I) sulfide (Cu2S) NCs through a redox reaction with iodine molecules (I2), which formed vacancies accompanied by a localized surface plasmon response. X-ray spectroscopy and diffraction reveal transformation from Cu2S to Cu-depleted phases, along with CuI formation. Greater reaction efficiency was observed for larger NCs. This behavior is attributed to interplay of the vacancy formation energy, which decreases for smaller sizedmore » NCs, and the growth of CuI on the NC surface, which is favored on well-defined facets of larger NCs. This doping process allows tuning of the plasmonic properties of a semiconductor across a wide range of plasmonic frequencies by varying the size of NCs and the concentration of iodine. Controlled vacancy doping of NCs may be used to tune and tailor semiconductors for use in optoelectronic applications.« less

Carbon doping in molecular beam epitaxy of GaAs from a heated graphite filament

NASA Technical Reports Server (NTRS)

Malik, R. J.; Nottenberg, R. N.; Schubert, E. F.; Walker, J. F.; Ryan, R. W.

1988-01-01

Carbon doping of GaAs grown by molecular beam epitaxy has been obtained for the first time by use of a heated graphite filament. Controlled carbon acceptor concentrations over the range of 10 to the 17th-10 to the 20th/cu cm were achieved by resistively heating a graphite filament with a direct current power supply. Capacitance-voltage, p/n junction and secondary-ion mass spectrometry measurements indicate that there is negligible diffusion of carbon during growth and with postgrowth rapid thermal annealing. Carbon was used for p-type doping in the base of Npn AlGaAs/GaAs heterojunction bipolar transistors. Current gains greater than 100 and near-ideal emitter heterojunctions were obtained in transistors with a carbon base doping of 1 x 10 to the 19th/cu cm. These preliminary results indicate that carbon doping from a solid graphite source may be an attractive substitute for beryllium, which is known to have a relatively high diffusion coefficient in GaAs.

Synergistic effect of Indium and Gallium co-doping on growth behavior and physical properties of hydrothermally grown ZnO nanorods.

PubMed

Lim, Jun Hyung; Lee, Seung Muk; Kim, Hyun-Suk; Kim, Hyun You; Park, Jozeph; Jung, Seung-Boo; Park, Geun Chul; Kim, Jungho; Joo, Jinho

2017-02-03

We synthesized ZnO nanorods (NRs) using simple hydrothermal method, with the simultaneous incorporation of gallium (Ga) and indium (In), in addition, investigated the co-doping effect on the morphology, microstructure, electronic structure, and electrical/optical properties. The growth behavior of the doped NRs was affected by the nuclei density and polarity of the (001) plane. The c-axis parameter of the co-doped NRs was similar to that of undoped NRs due to the compensated lattice distortion caused by the presence of dopants that are both larger (In 3+ ) and smaller (Ga 3+ ) than the host Zn 2+ cations. Red shifts in the ultraviolet emission peaks were observed in all doped NRs, owing to the combined effects of NR size, band gap renormalization, and the presence of stacking faults created by the dopant-induced lattice distortions. In addition, the NR/p-GaN diodes using co-doped NRs exhibited superior electrical conductivity compared to the other specimens due to the increase in the charge carrier density of NRs and the relatively large effective contact area of (001) planes. The simultaneous doping of In and Ga is therefore anticipated to provide a broader range of optical, physical, and electrical properties of ZnO NRs for a variety of opto-electronic applications.

Structural, morphological and gas sensing study of zinc doped tin oxide nanoparticles synthesized via hydrothermal technique

NASA Astrophysics Data System (ADS)

Singh, Davender; Kundu, Virender Singh; Maan, A. S.

2016-07-01

The pure and Zn-doped SnO2 nanoparticles were prepared successfully by hydrothermal route on large scale having different doping concentration of zinc from 0 to 0.20%. The calcined nanoparticles were characterized by X-ray diffraction (XRD) and scanning electron microscope (SEM) for structural and morphological studies. XRD analyses reveal that the nanoparticles of these doping concentrations are polycrystalline in nature and existed as tetragonal rutile structure, SEM study of images confirms the existence of very small, homogeneously distributed, and spherical nanoparticles. The particles size of the nanoparticles was calculated by Scherrer formula and was found in the range of 9-21 nm. The presence of dopant (i.e. zinc) and formation of Sn-O phase and hydrous nature of Zn-doped SnO2 nanoparticles are confirmed by EDX and FTIR study. The gas sensing properties of pure and Zn-doped SnO2 nanoparticles were investigated for various concentrations of methanol, ethanol and acetone at different operating temperatures and it has been found that with doping concentration of zinc (x = 0.20%) shows the maximum response 78% to methanol, 65% to ethanol and 62% to acetone respectively at different operating temperature within the measurement limit for a concentration of 100 ppm of each gases.

Effect of n-type doping level on direct band gap electroluminescence intensity for asymmetric metal/Ge/metal diodes

NASA Astrophysics Data System (ADS)

Maekura, T.; Tanaka, K.; Motoyama, C.; Yoneda, R.; Yamamoto, K.; Nakashima, H.; Wang, D.

2017-10-01

The direct band gap electroluminescence (EL) intensity was investigated for asymmetric metal/Ge/metal diodes fabricated on n-type Ge with doping levels in the range of 4.0 × 1013-3.1 × 1018 cm-3. Up to a doping level of 1016 cm-3 order, commercially available (100) n-Ge substrates were used. To obtain a doping level higher than 1017 cm-3 order, which is commercially unavailable, n+-Ge/p-Ge structures were fabricated by Sb doping on p-type (100) Ge substrates with an in-diffusion at 600 °C followed by a push-diffusion at 700 °C-850 °C. The EL intensity was increased with increasing doping level up to 1.0 × 1018 cm-3. After that, it was decreased with a further increase in n-type doping level. This EL intensity decrease is explained by the decreased number of holes in the active region. One reason is the difficulty in hole injection through the PtGe/n-Ge contact due to the occurring of tunneling electron current. Another reason is the loss of holes caused by both the small thickness of n+-Ge layer and the existence of n+p junction.

GeS2–In2S3–CsI Chalcogenide Glasses Doped with Rare Earth Ions for Near- and Mid-IR Luminescence

PubMed Central

Li, Legang; Bian, Junyi; Jiao, Qing; Liu, Zijun; Dai, Shixun; Lin, Changgui

2016-01-01

Chalcogenide glass has been considered as a promising host for the potential laser gain and amplifier media operating in near- and mid-IR spectral region. In this work, the IR luminescence spectra of rare earth ions (Tm3+, Er3+, and Dy3+) doped 65GeS2–25In2S3–10CsI chalcogenide glasses were measured under the excitation of an 808 nm laser diode. To the best of our knowledge, it firstly provides the luminescence spectra of a full near- and mid-IR spectral range from 1 to 4 μm in rare earth ions doped chalcogenide glasses. The results of absorption spectra, luminescence spectra, and fluorescence decay curves were obtained in these samples with singly-, co- and triply-doping behaviors of Tm3+, Er3+, and Dy3+ ions. In order to search possible efficient IR emissions, the luminescence behavior was investigated specifically with the variation of doping behaviors and dopant ions, especially in the samples co- and triply-doped active ions. The results suggest that favorable near- and mid-IR luminescence of rare earth ions can be further modified in chalcogenide glasses through an elaborated design of doping behavior and optically active ions. PMID:27869231

Synergistic effect of Indium and Gallium co-doping on growth behavior and physical properties of hydrothermally grown ZnO nanorods

NASA Astrophysics Data System (ADS)

Lim, Jun Hyung; Lee, Seung Muk; Kim, Hyun-Suk; Kim, Hyun You; Park, Jozeph; Jung, Seung-Boo; Park, Geun Chul; Kim, Jungho; Joo, Jinho

2017-02-01

We synthesized ZnO nanorods (NRs) using simple hydrothermal method, with the simultaneous incorporation of gallium (Ga) and indium (In), in addition, investigated the co-doping effect on the morphology, microstructure, electronic structure, and electrical/optical properties. The growth behavior of the doped NRs was affected by the nuclei density and polarity of the (001) plane. The c-axis parameter of the co-doped NRs was similar to that of undoped NRs due to the compensated lattice distortion caused by the presence of dopants that are both larger (In3+) and smaller (Ga3+) than the host Zn2+ cations. Red shifts in the ultraviolet emission peaks were observed in all doped NRs, owing to the combined effects of NR size, band gap renormalization, and the presence of stacking faults created by the dopant-induced lattice distortions. In addition, the NR/p-GaN diodes using co-doped NRs exhibited superior electrical conductivity compared to the other specimens due to the increase in the charge carrier density of NRs and the relatively large effective contact area of (001) planes. The simultaneous doping of In and Ga is therefore anticipated to provide a broader range of optical, physical, and electrical properties of ZnO NRs for a variety of opto-electronic applications.

Structural and electrical properties of Ge-on-Si(0 0 1) layers with ultra heavy n-type doping grown by MBE

NASA Astrophysics Data System (ADS)

Yurasov, D. V.; Antonov, A. V.; Drozdov, M. N.; Yunin, P. A.; Andreev, B. A.; Bushuykin, P. A.; Baydakova, N. A.; Novikov, A. V.

2018-06-01

In this paper we report about the formation of ultra heavy doped n-Ge layers on Si(0 0 1) substrates by molecular beam epitaxy and their characterization by different independent techniques. Combined study of structural and electrical properties of fabricated layers using secondary ion mass spectroscopy, X-ray diffraction, Hall effect and reflection measurements was carried out and it has revealed the achievable charge carrier densities exceeding 1020 cm-3 without deterioration of crystalline quality of such doped layers. It was also shown that X-ray analysis can be used as a fast, reliable and non-destructive method for evaluation of the electrically active Sb concentration in heavy doped Ge layers. The appropriate set of doping density allowed to adjust the plasmonic resonance position in Ge:Sb layers in a rather wide range reaching the wavelength of 3.6 μm for the highest doping concentration. Room temperature photoluminescence confirmed the high crystalline quality of such doped layers. Our results indicated the attainability of high electron concentration in Ge:Sb layers grown on Si substrates without crystalline quality deterioration which may find potential applications in the fields of Si-based photonics and mid-IR plasmonics.

Technological state of the art of SiC

NASA Astrophysics Data System (ADS)

Tyc, Stdphane

1993-10-01

In a recent paper [1], Locatelli and Gamal describe the technological state of the art of SiC compared with Si. I would like to bear witness to the rapid advancement of SiC technology by giving a slighty updated account of SiC technology. The boule growth of SiC now achieves diameters up to 60 mm. One of the most problematic standing issues is the presence of micropipes in the wafers with a density of the order of 100 cm^{-2} or more [2]. The doping range available in epilayers is now wider. CAFE Research [3] accepts orders for doping densities from 5 × 10^{15} cm^{-3} to 1 × 10^{19} cm^{-3} in both N and P type. However their state of the art is better (we have received P type with doping 4 × 10^{14} cm^{-3} and N type with doping over 2 × 10^{19} cm^{-3} and they have also delivered [4] N type doping of 5 × 10^{14} cm^{-3}). As for large P dopings, Dmitriev has published [5] dopings over 10^{20} cm^{-3} The specific resistance of contacts on N type layers has also rapidly improved. Kelner has published results of 3 × 10^{-6} Ohm.cm2 with Ni contacts [6]. We have obtained with molybdenum [7] specific resistances of 2 × 10^{-5} Ohm.cm2 on epitaxies doped to 5 × 10^{18} cm^{-3} This value should be rapidly lowered as higher doped layers are used. In sum, I do agree with the authors of [1] that the technology of 6H SiC is rapidly advancing, thanks to breakthroughs in material growth and to a wide ranging renewed interest in this material. The pace may actually be higher than hitherto realized. References: [1] Locatelli and Gamal, J. Phys. III France 3 (1993) 1101. [2] Barret D. L. et al., Tenth Int. Conf. on Crystal Growth, San Diego, CA, USA 16-21 (August 1992). [3] CREE Research Inc., 2810 Meridian Parkway, Durham, NC 27713, USA. [4] Parrish M., private communication. [5] Dmitriev et al., Ext. Abstracts of the Electrochemical Soc. Meeting, 4, 89-2 (1989) 711. [6] Workshop on SiC Material and Devices (Charlottesville, September 10-11 1992) VA 22901. [7] Tyc et a1., accepted at the ICSCRM (Washington DC, November 93).

Silica Aerogels Doped with Ru(II) Tris 1,l0-Phenanthro1ine)-Electron Acceptor Dyads: Improving the Dynamic Range, Sensitivity and Response Time of Sol-Gel Based Oxygen Sensors

NASA Technical Reports Server (NTRS)

Kevebtusm Bucgikas; Rawashdeh, Abdel M.; Elder, Ian A.; Yang, Jinhua; Dass, Amala; Sotiriou-Leventis, Chariklia

2005-01-01

Complexes 1 and 2 were characterized in fluid and frozen solution and as dopants of silica aerogels. The intramolecular quenching efficiency of pendant 4-benzoyl-N-methylpyridinium group (4BzPy) is solvent dependent: emission is quenched completely in acetonitrile but not in alcohols. On the other hand, N-benzyl-N'-methylviologen (BzMeV) quenches the emission in all solvents completely. The differences are traced electrochemically to a stronger solvation effect by the alcohol in the case of 1. In fiozen matrices or absorbed on the surfaces of silica aerogel, both 1 and 2 are photoluminescent. The lack of quenching has been traced to the environmental rigidity. When doped aerogels are cooled to 77K, the emission shifts to the blue and its intensity increases in analogy to what is observed with Ru(II) complexes in media undergoing fluid-to-rigid transition. The photoluminescence of 1 and 2 from the aerogel is quenched by oxygen diffusing through the pores. In the presence of oxygen, aerogels doped with 1 can modulate their emission over a wider dynamic range than aerogels doped with 2, and both are more sensitive than aerogels doped with Ru(II) tris(1,l0- phenanthroline). In contrast to frozen solutions, the luminescent moieties in the bulk of aerogels kept at 77K are still accessible, leading to more sensitive platforms for oxygen sensors than other ambient temperature configurations.

Calibration on wide-ranging aluminum doping concentrations by photoluminescence in high-quality uncompensated p-type 4H-SiC

NASA Astrophysics Data System (ADS)

Asada, Satoshi; Kimoto, Tsunenobu; Ivanov, Ivan G.

2017-08-01

Previous work has shown that the concentration of shallow dopants in a semiconductor can be estimated from the photoluminescence (PL) spectrum by comparing the intensity of the bound-to-the-dopant exciton emission to that of the free exciton. In this work, we study the low-temperature PL of high-quality uncompensated Al-doped p-type 4H-SiC and propose algorithms for determining the Al-doping concentration using the ratio of the Al-bound to free-exciton emission. We use three different cryogenic temperatures (2, 41, and 79 K) in order to cover the Al-doping range from mid 1014 cm-3 up to 1018 cm-3. The Al-bound exciton no-phonon lines and the strongest free-exciton replica are used as a measure of the bound- and free-exciton emissions at a given temperature, and clear linear relationships are obtained between their ratio and the Al-concentration at 2, 41, and 79 K. Since nitrogen is a common unintentional donor dopant in SiC, we also discuss the criteria allowing one to determine from the PL spectra whether a sample can be considered as uncompensated or not. Thus, the low-temperature PL provides a convenient non-destructive tool for the evaluation of the Al concentration in 4H-SiC, which probes the concentration locally and, therefore, can also be used for mapping the doping homogeneity.

Dynamical cluster approximation plus semiclassical approximation study for a Mott insulator and d-wave pairing

NASA Astrophysics Data System (ADS)

Kim, SungKun; Lee, Hunpyo

2017-06-01

Via a dynamical cluster approximation with N c = 4 in combination with a semiclassical approximation (DCA+SCA), we study the doped two-dimensional Hubbard model. We obtain a plaquette antiferromagnetic (AF) Mott insulator, a plaquette AF ordered metal, a pseudogap (or d-wave superconductor) and a paramagnetic metal by tuning the doping concentration. These features are similar to the behaviors observed in copper-oxide superconductors and are in qualitative agreement with the results calculated by the cluster dynamical mean field theory with the continuous-time quantum Monte Carlo (CDMFT+CTQMC) approach. The results of our DCA+SCA differ from those of the CDMFT+CTQMC approach in that the d-wave superconducting order parameters are shown even in the high doped region, unlike the results of the CDMFT+CTQMC approach. We think that the strong plaquette AF orderings in the dynamical cluster approximation (DCA) with N c = 4 suppress superconducting states with increasing doping up to strongly doped region, because frozen dynamical fluctuations in a semiclassical approximation (SCA) approach are unable to destroy those orderings. Our calculation with short-range spatial fluctuations is initial research, because the SCA can manage long-range spatial fluctuations in feasible computational times beyond the CDMFT+CTQMC tool. We believe that our future DCA+SCA calculations should supply information on the fully momentum-resolved physical properties, which could be compared with the results measured by angle-resolved photoemission spectroscopy experiments.

Performance Evaluation of an Oxygen Sensor as a Function of the Samaria Doped Ceria Film Thickness

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sanghavi, Rahul P.; Nandasiri, Manjula I.; Kuchibhatla, Satyanarayana V N T

The current demand in the automobile industry is in the control of air-fuel mixture in the combustion engine of automobiles. Oxygen partial pressure can be used as an input parameter for regulating or controlling systems in order to optimize the combustion process. Our goal is to identify and optimize the material system that would potentially function as the active sensing material for such a device that monitors oxygen partial pressure in these systems. We have used thin film samaria doped ceria (SDC) as the sensing material for the sensor operation, exploiting the fact that at high temperatures, oxygen vacancies generatedmore » due to samarium doping act as conducting medium for oxygen ions which hop through the vacancies from one side to the other contributing to an electrical signal. We have recently established that 6 atom % Sm doping in ceria films has optimum conductivity. Based on this observation, we have studied the variation in the overall conductivity of 6 atom % samaria doped ceria thin films as a function of thickness in the range of 50 nm to 300 nm at a fixed bias voltage of 2 volts. A direct proportionality in the increase in the overall conductivity is observed with the increase in sensing film thickness. For a range of oxygen pressure values from 1 mTorr to 100 Torr, a tolerable hysteresis error, good dynamic response and a response time of less than 10 seconds was observed« less

Thermoelectric Properties of Bi2Te3: CuI and the Effect of Its Doping with Pb Atoms

PubMed Central

Han, Mi-Kyung; Lee, Da-Hee; Kim, Sung-Jin

2017-01-01

In order to understand the effect of Pb-CuI co-doping on the thermoelectric performance of Bi2Te3, n-type Bi2Te3 co-doped with x at % CuI and 1/2x at % Pb (x = 0, 0.01, 0.03, 0.05, 0.07, and 0.10) were prepared via high temperature solid state reaction and consolidated using spark plasma sintering. Electron and thermal transport properties, i.e., electrical conductivity, carrier concentration, Hall mobility, Seebeck coefficient, and thermal conductivity, of CuI-Pb co-doped Bi2Te3 were measured in the temperature range from 300 K to 523 K, and compared to corresponding x% of CuI-doped Bi2Te3 and undoped Bi2Te3. The addition of a small amount of Pb significantly decreased the carrier concentration, which could be attributed to the holes from Pb atoms, thus the CuI-Pb co-doped samples show a lower electrical conductivity and a higher Seebeck coefficient when compared to CuI-doped samples with similar x values. The incorporation of Pb into CuI-doped Bi2Te3 rarely changed the power factor because of the trade-off relationship between the electrical conductivity and the Seebeck coefficient. The total thermal conductivity(κtot) of co-doped samples (κtot ~ 1.4 W/m∙K at 300 K) is slightly lower than that of 1% CuI-doped Bi2Te3 (κtot ~ 1.5 W/m∙K at 300 K) and undoped Bi2Te3 (κtot ~ 1.6 W/m∙K at 300 K) due to the alloy scattering. The 1% CuI-Pb co-doped Bi2Te3 sample shows the highest ZT value of 0.96 at 370 K. All data on electrical and thermal transport properties suggest that the thermoelectric properties of Bi2Te3 and its operating temperature can be controlled by co-doping. PMID:29072613

Thermoelectric Properties of Bi₂Te₃: CuI and the Effect of Its Doping with Pb Atoms.

PubMed

Han, Mi-Kyung; Jin, Yingshi; Lee, Da-Hee; Kim, Sung-Jin

2017-10-26

In order to understand the effect of Pb-CuI co-doping on the thermoelectric performance of Bi₂Te₃, n -type Bi₂Te₃ co-doped with x at % CuI and 1/2 x at % Pb ( x = 0, 0.01, 0.03, 0.05, 0.07, and 0.10) were prepared via high temperature solid state reaction and consolidated using spark plasma sintering. Electron and thermal transport properties, i.e., electrical conductivity, carrier concentration, Hall mobility, Seebeck coefficient, and thermal conductivity, of CuI-Pb co-doped Bi₂Te₃ were measured in the temperature range from 300 K to 523 K, and compared to corresponding x % of CuI-doped Bi₂Te₃ and undoped Bi₂Te₃. The addition of a small amount of Pb significantly decreased the carrier concentration, which could be attributed to the holes from Pb atoms, thus the CuI-Pb co-doped samples show a lower electrical conductivity and a higher Seebeck coefficient when compared to CuI-doped samples with similar x values. The incorporation of Pb into CuI-doped Bi₂Te₃ rarely changed the power factor because of the trade-off relationship between the electrical conductivity and the Seebeck coefficient. The total thermal conductivity(κ tot ) of co-doped samples (κ tot ~ 1.4 W/m∙K at 300 K) is slightly lower than that of 1% CuI-doped Bi₂Te₃ (κ tot ~ 1.5 W/m∙K at 300 K) and undoped Bi₂Te₃ (κ tot ~ 1.6 W/m∙K at 300 K) due to the alloy scattering. The 1% CuI-Pb co-doped Bi₂Te 3 sample shows the highest ZT value of 0.96 at 370 K. All data on electrical and thermal transport properties suggest that the thermoelectric properties of Bi₂Te 3 and its operating temperature can be controlled by co-doping.

Unified electronic phase diagram for hole-doped high- Tc cuprates

NASA Astrophysics Data System (ADS)

Honma, T.; Hor, P. H.

2008-05-01

We have analyzed various characteristic temperatures and energies of hole-doped high- Tc cuprates as a function of a dimensionless hole-doping concentration (pu) . Entirely based on the experimental grounds, we construct a unified electronic phase diagram (UEPD), where three characteristic temperatures ( T∗ ’s) and their corresponding energies ( E∗ ’s) converge as pu increases in the underdoped regime. T∗ ’s and E∗ ’s merge together with the Tc curve and 3.5kBTc curve at pu˜1.1 in the overdoped regime, respectively. They finally go to zero at pu˜1.3 . The UEPD follows an asymmetric half-dome-shaped Tc curve, in which Tc appears at pu˜0.4 , reaches a maximum at pu˜1 , and rapidly goes to zero at pu˜1.3 . The asymmetric half-dome-shaped Tc curve is at odds with the well-known symmetric superconducting dome for La2-xSrxCuO4 (SrD-La214), in which two characteristic temperatures and energies converge as pu increases and merge together at pu˜1.6 , where Tc goes to zero. The UEPD clearly shows that pseudogap phase precedes and coexists with high temperature superconductivity in the underdoped and overdoped regimes, respectively. It is also clearly seen that the upper limit of high- Tc cuprate physics ends at a hole concentration that equals to 1.3 times the optimal doping concentration for almost all high- Tc cuprate materials and 1.6 times the optimal doping concentration for the SrD-La214. Our analysis strongly suggests that pseudogap is a precursor of high- Tc superconductivity, the observed quantum critical point inside the superconducting dome may be related to the end point of UEPD, and the normal state of the underdoped and overdoped high temperature superconductors cannot be regarded as a conventional Fermi liquid phase.

Superconductivity, pairing symmetry, and disorder in the doped topological insulator Sn 1 - x In x Te for x ≥ 0.10

DOE PAGES

Smylie, M. P.; Claus, H.; Kwok, W. -K.; ...

2018-01-19

In this paper, the temperature dependence of the London penetration depth Δλ(T) in the superconducting doped topological crystalline insulator Sn 1-xIn xTe was measured down to 450 mK for two different doping levels, x ≈ 0.45 (optimally doped) and x ≈ 0.10 (underdoped), bookending the range of cubic phase in the compound. The results indicate no deviation from fully gapped BCS-like behavior, eliminating several candidate unconventional gap structures. Critical field values below 1 K and other superconducting parameters are also presented. Finally, the introduction of disorder by repeated particle irradiation with 5 MeV protons does not enhance T c, indicatingmore » that ferroelectric interactions do not compete with superconductivity.« less

Localization of holes near charged defects in orbitally degenerate, doped Mott insulators

NASA Astrophysics Data System (ADS)

Avella, Adolfo; Oleś, Andrzej M.; Horsch, Peter

2018-05-01

We study the role of charged defects, disorder and electron-electron (e-e) interactions in a multiband model for t2g electrons in vanadium perovskites R1-xCaxVO3 (R = La,…,Y). By means of unrestricted Hartree-Fock calculations, we find that the atomic multiplet structure persists up to 50% Ca doping. Using the inverse participation number, we explore the degree of localization and its doping dependence for all electronic states. The observation of strongly localized wave functions is consistent with our conjecture that doped holes form spin-orbital polarons that are strongly bound to the charged Ca2+ defects. Interestingly, the long-range e-e interactions lead to a discontinuity in the wave function size across the chemical potential, where the electron removal states are more localized than the addition states.

Specific features of doping with antimony during the ion-beam crystallization of silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pashchenko, A. S., E-mail: as.pashchenko@gmail.com; Chebotarev, S. N.; Lunin, L. S.

2016-04-15

A method of doping during the growth of thin films by ion-beam crystallization is proposed. By the example of Si and Sb, the possibility of controllably doping semiconductors during the ion-beam crystallization process is shown. A calibrated temperature dependence of the antimony vapor flow rate in the range from 150 to 400°C is obtained. It is established that, an increase in the evaporator temperature above 200°C brings about the accumulation of impurities in the layer growth direction. Silicon layers doped with antimony to a concentration of 10{sup 18} cm{sup –3} are grown. It is shown that, as the evaporator temperaturemore » is increased, the efficiency of the activation of antimony in silicon nonlinearly decreases from ~10{sup 0} to ~10{sup –3}.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kaur, Ramneek; Tripathi, S. K., E-mail: surya@pu.ac.in, E-mail: surya-tr@yahoo.com

This paper reports the synthesis and electrical characterization of CdSe-PMMA nanocomposite. CdSe-PMMA nanocomposite has been prepared by ex-situ technique through chemical route. The influence of three different Ag doping concentrations on the electrical properties has been studied in the temperature range ∼ 303-353 K. Transmission electron micrograph reveals the spherical morphology of the CdSe nanoparticles and their proper dispersion in the PMMA matrix. The electrical conduction of the polymer nanocomposites is through thermally activated process with single activation energy. With Ag doping, initially the activation energy increases upto 0.2 % Ag doping concentration but with further increase in Ag concentration, itmore » decreases. This behavior has been discussed on the basis of randomly oriented grain boundaries and defect states. Thus, the results indicate that the transport properties of the polymer nanocomposites can be tailored by controlled doping concentration.« less

Widely tunable short-infrared thulium and holmium doped fluorozirconate waveguide chip lasers.

PubMed

Lancaster, D G; Gross, S; Withford, M J; Monro, T M

2014-10-20

We report widely tunable (≈ 260 nm) Tm(3+) and Ho(3+) doped fluorozirconate (ZBLAN) glass waveguide extended cavity lasers with close to diffraction limited beam quality (M(2) ≈ 1.3). The waveguides are based on ultrafast laser inscribed depressed claddings. A Ti:sapphire laser pumped Tm(3+)-doped chip laser continuously tunes from 1725 nm to 1975 nm, and a Tm(3+)-sensitized Tm(3+):Ho(3+) chip laser displays tuning across both ions evidenced by a red enhanced tuning range of 1810 to 2053 nm. We also demonstrate a compact 790 nm diode laser pumped Tm(3+)-doped chip laser which tunes from 1750 nm to 1998 nm at a 14% incident slope efficiency, and a beam quality of M(2) ≈ 1.2 for a large mode-area waveguide with 70 µm core diameter.

The Preparation Conditions of Chromium Doped ZnSe and Their Effect on the Infrared Luminescence Properties

NASA Technical Reports Server (NTRS)

Burger, A.; Chattopadhyay, K.; Ndap, J.-O.; Ma, X.; Morgan, S. H.; Rablau, C. I.; Su, C. H.; Feth, S.

2000-01-01

We report the investigation by photoluminescence lifetime measurements of the near-IR emissions from a series of chromium-doped ZnSe samples, correlated to their preparation conditions. The samples were polycrystalline or single crystals prepared by post growth diffusion doping or single crystals doped during growth by the physical vapor transport method. Room temperature lifetime values between 6 and 8 micro seconds were measured for samples with Cr2+ from low 10(exp 17) to high 10(exp 18) / cubic cm range. Lifetime data taken down to 78 K was found to be rather temperature independent, reconfirming previous reports indicating a quantum yield of the corresponding emission of close to 100% at room temperature. A strong decrease in the room temperature lifetime was found for chromium concentrations higher than 10(exp 19) / cubic CM.

Electrochemical Doping of Halide Perovskites with Ion Intercalation.

PubMed

Jiang, Qinglong; Chen, Mingming; Li, Junqiang; Wang, Mingchao; Zeng, Xiaoqiao; Besara, Tiglet; Lu, Jun; Xin, Yan; Shan, Xin; Pan, Bicai; Wang, Changchun; Lin, Shangchao; Siegrist, Theo; Xiao, Qiangfeng; Yu, Zhibin

2017-01-24

Halide perovskites have recently been investigated for various solution-processed optoelectronic devices. The majority of studies have focused on using intrinsic halide perovskites, and the intentional incoporation of dopants has not been well explored. In this work, we discovered that small alkali ions, including lithium and sodium ions, could be electrochemically intercalated into a variety of halide and pseudohalide perovskites. The ion intercalation caused a lattice expansion of the perovskite crystals and resulted in an n-type doping of the perovskites. Such electrochemical doping improved the conductivity and changed the color of the perovskites, leading to an electrochromism with more than 40% reduction of transmittance in the 450-850 nm wavelength range. The doped perovskites exhibited improved electron injection efficiency into the pristine perovskite crystals, resulting in bright light-emitting diodes with a low turn-on voltage.

Superconductivity, pairing symmetry, and disorder in the doped topological insulator Sn 1 - x In x Te for x ≥ 0.10

DOE Office of Scientific and Technical Information (OSTI.GOV)

Smylie, M. P.; Claus, H.; Kwok, W. -K.

In this paper, the temperature dependence of the London penetration depth Δλ(T) in the superconducting doped topological crystalline insulator Sn 1-xIn xTe was measured down to 450 mK for two different doping levels, x ≈ 0.45 (optimally doped) and x ≈ 0.10 (underdoped), bookending the range of cubic phase in the compound. The results indicate no deviation from fully gapped BCS-like behavior, eliminating several candidate unconventional gap structures. Critical field values below 1 K and other superconducting parameters are also presented. Finally, the introduction of disorder by repeated particle irradiation with 5 MeV protons does not enhance T c, indicatingmore » that ferroelectric interactions do not compete with superconductivity.« less

Sb:SnO2 thin films-synthesis and characterization

NASA Astrophysics Data System (ADS)

Bhadrapriya B., C.; Varghese, Anitta Rose; Amarendra, G.; Hussain, Shamima

2018-04-01

Transparent thin films of antimony doped SnO2 have been synthesized and characterized using optical spectroscopy, XRD, RAMAN and FESEM. The band gap of Sb doped tin oxide thin film samples were found to vary from 3.26 eV to 3.7 eV. The XRD peaks showed prominent rutile SnO2 peaks with diminished intensity due to antimony doping. A wide band in the range 550-580 cm-1 was observed in raman spectra and is a feature of nano-sized SnO2. SEM images showed flower-like structures on thin film surface, a characteristic feature of antimony.

Growth and characterization of manganese doped gallium nitride nanowires.

PubMed

Kumar, V Suresh; Kesavamoorthy, R; Kumar, J

2008-08-01

Manganese doped GaN nanowires have been grown by chemical vapour transport method on sapphire (0001) substrates in the temperature range of 800-1050 degrees C. The surface features of nanowires have been investigated using Scanning Electron Microscopy (SEM), Energy Dispersive X-ray analysis (EDAX), Raman scattering studies and Electron Paramagnetic Resonance (EPR). SEM images showed that the morphology of the one dimensional materials included straight nanorods and nanowires around 70-80 nm. Raman spectrum showed the GaMnN vibrational modes at 380, 432 and 445 cm(-1). EPR measurements were performed on Mn doped GaN nanowires in order to evaluate the magnetic behaviour.

Au/ZnO hybrid nanocatalysts impregnated in N-doped graphene for simultaneous determination of ascorbic acid, acetaminophen and dopamine.

PubMed

Chen, Xianlan; Zhang, Guowei; Shi, Ling; Pan, Shanqing; Liu, Wei; Pan, Hiabo

2016-08-01

The formation of nitrogen-doped (N-doped) graphene uses hydrothermal method with urea as reducing agent and nitrogen source. The surface elemental composition of the catalyst was analyzed through XPS, which showed a high content of a total N species (7.12at.%), indicative of the effective N-doping, present in the form of pyridinic N, pyrrolic N and graphitic N groups. Moreover, Au nanoparticles deposited on ZnO nanocrystals surface, forming Au/ZnO hybrid nanocatalysts, undergo a super-hydrophobic to super-hydrophilic conversion. Herein, we present Au/ZnO hybrid nanocatalysts impregnated in N-doped graphene sheets through sonication technique of the Au/ZnO/N-doped graphene hybrid nanostructures. The as-prepared Au/ZnO/N-doped graphene hybrid nanostructure modified glassy carbon electrode (Au/ZnO/N-doped graphene/GCE) was first employed for the simultaneous determination of ascorbic acid (AA), dopamine (DA) and acetaminophen (AC). The oxidation over-potentials of AA, DA and AC decreased dramatically, and their oxidation peak currents increased significantly at Au/ZnO/N-doped graphene/GCE compared to those obtained at the N-doped graphene/GCE and bare CCE. The peak separations between AA and DA, DA and AC, and AC and AA are large up to 195, 198 and 393mV, respectively. The calibration curves for AA, DA and AC were obtained in the range of 30.00-13.00×10(3), 2.00-0.18×10(3) and 5.00-3.10×10(3)μM, respectively. The detection limits (S/N=3) were 5.00, 0.40 and 0.80μM for AA, DA and AC, respectively. Copyright © 2016 Elsevier B.V. All rights reserved.

Electronic Structure, Phonon Dynamical Properties, and CO 2 Capture Capability of Na 2 - x M x Zr O 3 ( M = Li ,K): Density-Functional Calculations and Experimental Validations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Duan, Yuhua; Lekse, Jonathan; Wang, Xianfeng

2015-04-22

The electronic structural and phonon properties of Na 2-αM αZrO 3 (M ¼ Li,K, α = ¼ 0.0,0.5,1.0,1.5,2.0) are investigated by first-principles density-functional theory and phonon dynamics. The thermodynamic properties of CO 2 absorption and desorption in these materials are also analyzed. With increasing doping level α, the binding energies of Na 2-αLi αZrO 3 are increased while the binding energies of Na 2-α K αZrO 3 are decreased to destabilize the structures. The calculated band structures and density of states also show that, at the same doping level, the doping sites play a significant role in the electronic properties.more » The phonon dispersion results show that few soft modes are found in several doped configurations, which indicates that these structures are less stable than other configurations with different doping levels. From the calculated relationships among the chemical-potential change, the CO 2 pressure, and the temperature of the CO 2 capture reactions by Na 2-αM αZrO 3, and from thermogravimetric-analysis experimental measurements, the Li- and K-doped mixtures Na 2-αM αZrO 3 have lower turnover temperatures (T t) and higher CO 2 capture capacities, compared to pure Na 2ZrO 3. The Li-doped systems have a larger T t decrease than the K-doped systems. When increasing the Li-doping level α, the T t of the corresponding mixture Na 2-αLi αZrO 3 decreases further to a low-temperature range. However, in the case of K-doped systems Na 2-αK αZrO 3, although doping K into Na 2ZrO 3 initially shifts its T t to lower temperatures, further increases of the K-doping level α causes T t to increase. Therefore, doping Li into Na 2ZrO 3 has a larger influence on its CO 2 capture performance than the K-doped Na 2ZrO 3. Compared with pure solidsM 2ZrO 3, after doping with other elements, these doped systems’ CO 2 capture performances are improved.« less

Persistent luminescence of transition metal (Co, Ni...)-doped ZnGa2O4 phosphors for applications in the near-infrared range

NASA Astrophysics Data System (ADS)

Pellerin, Morgane; Castaing, Victor; Gourier, Didier; Chanéac, Corinne; Viana, Bruno

2018-02-01

Persistent luminescence materials present many applications including security lighting and bio-imaging. Many progresses have been made in the elaboration of persistent luminescent nanoparticles suitable for the first NIR partial transparency window (650 - 950 nm). Moving to the second and third near-infrared partial transparency windows (1000 nm - 1800 nm) allows further reducing of scattering, absorption and tissue autofluorescence effects. In this work, we present the synthesis of Co2+ and Ni2+ doped zinc-gallate nanoparticles with broad emission covering the NIR-II range. Site occupancy, energy levels, optical features and persistent phenomena are presented.

Polarization-independent refractive index tuning using gold nanoparticle-stabilized blue phase liquid crystals.

PubMed

Yabu, Shuhei; Tanaka, Yuma; Tagashira, Kenji; Yoshida, Hiroyuki; Fujii, Akihiko; Kikuchi, Hirotsugu; Ozaki, Masanori

2011-09-15

Polarization-independent refractive index (RI) modulation can be achieved in blue phase (BP) liquid crystals (LCs) by applying an electric field parallel to the direction of light transmission. One of the problems limiting the achievable tuning range is the field-induced phase transition to the cholesteric phase, which is birefringent and chiral. Here we report the RI modulation capabilities of gold nanoparticle-doped BPs I and II, and we show that field-induced BP-cholesteric transition is suppressed in nanoparticle-doped BP II. Because the LC remains optically isotropic even at high applied voltages, a larger RI tuning range can be achieved.

Ultra-broad range organic solid-state laser from a dye-doped holographic grating quasi-waveguide configuration

NASA Astrophysics Data System (ADS)

Liu, Minghuan; Liu, Yonggang; Peng, Zenghui; Mu, Quanquan; Cao, Zhaoliang; Lu, Xinghai; Ma, Ji; Xuan, Li

2017-08-01

This paper reports the ultra-broad 149.1 nm lasing emission from 573.2 to 722.3 nm using a simple [4-(dicyanomethylene)-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran] (DCM)-doped holographic polymer-dispersed liquid crystal (HPDLC) grating quasi-waveguide configuration by varying the grating period. The lasing emission beams show s-polarization property. The quasi-waveguide structure, which contained the cover glass, the DCM-doped HPDLC grating, the semiconducting polymer film poly[-methoxy-5-(2‧-ethyl-hexyloxy)-1,4-phenylene-vinylene] (MEH-PPV), and the substrate were confirmed to decrease lasing threshold and broaden lasing wavelength. The operational lifetime of the device is 240 000 pulses, which corresponds to an overall laser duration of more than 6 h at a repetition rate of 10 Hz. In addition, the dual-wavelength lasing range from the 8th and 9th order is over 40 nm. The electrical tunability of the dual-wavelength lasing emission is over 1 nm. The experimental results facilitated the decreased lasing threshold and broadened lasing wavelength range of organic solid-state lasers.

Structural, Optical, and Electronic Characterization of Fe-Doped Alumina Nanoparticles

NASA Astrophysics Data System (ADS)

Heiba, Zein K.; Mohamed, Mohamed Bakr; Wahba, Adel Maher; Imam, N. G.

2018-01-01

The effects of iron doping on the structural, optical, and electronic properties of doped alumina have been studied. Single-phase iron-doped alumina Al2- x Fe x O3 ( x = 0.00 to 0.30) nanoparticles were synthesized via citrate-precursor method. Formation of single-phase hexagonal corundum structure with no other separate phases was demonstrated by x-ray diffraction (XRD) analysis and Fourier-transform infrared spectroscopy. The effects of iron doping on the α-Al2O3 structural parameters, viz. atomic coordinates, lattice parameters, crystallite size, and microstrain, were estimated from XRD data by applying the Rietveld profile fitting method. Transmission electron microscopy further confirmed the nanosize nature of the prepared samples with size ranging from 12 nm to 83 nm. The electronic band structure was investigated using density functional theory calculations to explain the decrease in the energy gap of Al2- x Fe x O3 as the amount of Fe was increased. The colored emission peaks in the visible region (blue, red, violet) of the electromagnetic spectrum obtained for the Fe-doped α-Al2O3 nanoparticles suggest their potential application as ceramic nanopigments.

A first-principles study of impurity effects on monolayer MoS2: bandgap dominated by donor impurities

NASA Astrophysics Data System (ADS)

Zhang, Hua; Zhou, Wenzhe; Yang, Zhixiong; Wu, Shoujian; Ouyang, Fangping; Xu, Hui

2017-12-01

Based on the first principles calculation, the electrical properties and optical properties of monolayer molybdenum disulfide (MoS2) substitutionally doped by the VB and VIIB transition metal atoms (V, Nb, Ta, Mn, Tc, Re) were investigated. It is found that n-type doping or p-type doping tunes the Fermi level into the conduction band or the valence band respectively, leading to the degenerate semiconductor, while the compensatorily doped systems where the number of valence electrons is not alerted remain direct band gap ranging from 0.958 eV to 1.414 eV. According to the analysis on densities of states, the LUMO orbitals of donor impurities play the crucial role in band gap tuning. Hence, the band gap and optical properties of doped MoS2 are dominated by the species of the donor. Due to the reduction of the band gap, doped MoS2 have a lower threshold energy of photon absorption and an enhanced absorption in near infrared region. These results provide a significant guidance for the design of new 2D optoelectronic materials based on transition metal disulfide.

Optical properties of pure and PbSe doped TiS2 nanodiscs

NASA Astrophysics Data System (ADS)

Parvaz, M.; Islamuddin; Khan, Zishan H.

2018-06-01

Titanium disulfide, being one of the popular transition-metal dichalcogenide (TMD) materials, shows wonderful properties owing to tunable optical band gap. Pure and PbSe doped titanium disulfide nanodiscs have been synthesized by solid-state reaction method. FESEM, TEM and Raman images confirm the synthesis of nanodiscs. XRD spectra suggest the polycrystalline structure of as-prepared as well as PbSe doped TiS2 nanodiscs. PL spectra of the as-synthesized nanodiscs has been studied in the wavelength range of (300–550 nm), at room temperature. The position of the peak shifts towards the lower wavelength (blue shift) and intensity of the PL increases after the doping of PbSe, which may be due to a broadening of the optical band gap. UV–vis spectra has been used to calculate optical band gap of pure and PbSe doped titanium disulfide nanodiscs. The calculated value are found to be 1.93 eV and 2.03 eV respectively. Various optical constants such as n and k have been calculated. The value of extinction coefficient (k) of pure and doped titanium disulfide increases while the value of the refractive index (n) decreases with increase in photon energy.

Oxygen Annealing in the Synthesis of the Electron-Doped Cuprates

NASA Astrophysics Data System (ADS)

Higgins, J. S.; Bach, P. L.; Yu, W.; Weaver, B. D.; Greene, R. L.

2015-03-01

Post-synthesis oxygen reduction (annealing) in the electron-doped, high-temperature superconducting cuprates is necessary for the establishment of superconductivity. It is not established what effect this reduction has microscopically on the lattice structure. Several mechanisms have been put forth as explanations; they range from disorder minimization1, antiferromagnetic suppression2, and copper migration3. Here we present an electronic transport study on electron-doped cuprate Pr2-xCexCuO4+/-δ (PCCO) thin films in an attempt to better understand the need for this post-synthesis process. Several different cerium doping concentrations of PCCO were grown. Within each doping, a series of films were grown with varying levels of oxygen concentration. As a measure of disorder on the properties of PCCO, several films were irradiated with various doses of 2 MeV protons. Analysis within each series, and among the different dopings, favors disorder minimization through the removal of apical oxygen as the explanation for the necessary post-synthesis annealing process. 1P. K. Mang, et al., Physical Review Letters, 93(2):027002, 2004. 2P. Richard, et al., Physical Review B, 70 (6), 064513, 2004. 3Hye Jung Kang, et al., Nature Materials, 2007. Supported by NSF DMR 1104256.

Synergistic effect of N-decorated and Mn2+ doped ZnO nanofibers with enhanced photocatalytic activity

PubMed Central

Wang, Yuting; Cheng, Jing; Yu, Suye; Alcocer, Enric Juan; Shahid, Muhammad; Wang, Ziyuan; Pan, Wei

2016-01-01

Here we report a high efficiency photocatalyst, i.e., Mn2+-doped and N-decorated ZnO nanofibers (NFs) enriched with vacancy defects, fabricated via electrospinning and a subsequent controlled annealing process. This nanocatalyst exhibits excellent visible-light photocatalytic activity and an apparent quantum efficiency up to 12.77%, which is 50 times higher than that of pure ZnO. It also demonstrates good stability and durability in repeated photocatalytic degradation experiments. A comprehensive structural analysis shows that high density of oxygen vacancies and nitrogen are introduced into the nanofibers surface. Hence, the significant enhanced visible photocatalytic properties for Mn-ZnO NFs are due to the synergetic effects of both Mn2+ doping and N decorated. Further investigations exhibit that the Mn2+-doping facilitates the formation of N-decorated and surface defects when annealing in N2 atmosphere. N doping induce the huge band gap decrease and thus significantly enhance the absorption of ZnO nanofibers in the range of visible-light. Overall, this paper provides a new approach to fabricate visible-light nanocatalysts using both doping and annealing under anoxic ambient. PMID:27600260

1/f noise in titanium doped aluminum thin film deposited by electron beam evaporation method and its dependence on structural variation with temperature

NASA Astrophysics Data System (ADS)

Ananda, P.; Vedanayakam, S. Victor; Thyagarajan, K.; Nandakumar, N.

2018-05-01

A brief review of Titanium doped Aluminum film has many attractive properties such as thermal properties and 1/f noise is highlighted. The thin film devices of Titanium doped alluminium are specially used in aerospace technology, automotive, biomedical fields also in microelectronics. In this paper, we discus on 1/f noise and nonlinear effects in titanium doped alluminium thin films deposited on glass substrate using electron beam evaporation for different current densities on varying temperatures of the film. The plots are dawn for 1/f noise of the films at different temperatures ranging from 300°C to 450°C and the slopes are determined. The studies shows a higher order increment in FFT amplitude of low frequency 1/f noise in thin films at annealing temperature 400°C. In this technology used in aerospace has been the major field of application of titanium doped alluminium, being one of the major challenges of the development of new alloys with improved strength at high temperature, wide chord Titanium doped alluminium fan blades increases the efficiency while reducing 1/f noise. Structural properties of XRD is identified.

Luminescent properties and energy transfer of luminescent carbon dots assembled mesoporous Al(2)O(3): Eu(3) co-doped materials for temperature sensing.

PubMed

He, Youling; He, Jiangling; Zhang, Haoran; Liu, Yingliang; Lei, Bingfu

2017-06-15

Owning to the hydrogen-band interactions, blue-light-emitting luminescent carbon dots (CDs) synthesized by one-pot hydrothermal treatment were successfully assembled into Eu 3+ doped mesoporous aluminas (MAs). Interesting, dual-emissive CDs/MAs co-doped materials with higher quantum yield (QY), long-term stability, mesoporous structure, high thermal stability, and large surface areas were obtained. Furthermore, the obtained CDs/MAs co-doped materials possessed tunable color, and excellent temperature sensitivity due to the existing of energy transfer between CDs and Eu 3+ ion. The energy transfer efficiency (η) and energy transfer probability (P) for CDs/Eu 3+ co-doped materials possessed a monotonous tendency with the change of Eu 3+ content. More importantly, the dual-emissive colors can be regularly adjusted through regulating their excitation wavelength or relative mass ratio. In addition, the emission intensity of the CDs/MAs co-doped materials gradually decreased with increasing temperature showing the clear temperature dependence, this dual-emissive thermometer was with high sensitivity, owning a great fitted curve in the range from 100 to 360K under a single wavelength excitation. Copyright © 2017 Elsevier Inc. All rights reserved.

High efficiency fluorescent white OLEDs based on DOPPP

NASA Astrophysics Data System (ADS)

Zhang, Gang; Chen, Chen; Lang, Jihui; Zhao, Lina; Jiang, Wenlong

2017-08-01

The white organic light-emitting devices (WOLED) with the structures of ITO/m-MTDATA (10 nm)/NPB (30 nm)/Rubrene (0.2 nm)/DOPPP (x nm)/TAz (10 nm)/Alq3 (30 nm)/LiF (0.5 nm)/Al and ITO/NPB (30 nm)/DPAVBi:Rubrene (2 wt.%, 20 nm)/ DOPPP (x nm)/TAZ (10 nm)/Alq3 (30 nm)/LiF (0.5 nm)/Al (100 nm) have been fabricated by the vacuum thermal evaporation method. The results show that the chroma of the non-doped device is the best and the color coordinates are in the range of white light. The maximum luminance is 12,750 cd/m2 and the maximum current efficiency is 8.55 cd/A. The doped device A has the maximum luminance (16,570 cd/m2), when the thickness of blue layer DOPPP is 25 nm, and the doped device B achieves the highest efficiency (10.47 cd/A), when the thickness of DOPPP is 15 nm. All the performances of the doped devices are better than the non-doped one. The results demonstrate that the doped structures can realize the energy transfer and then improve the performance of the device effectively.

Influence of Nb Doping Concentration on Bolometric Properties of RF Magnetron Sputtered Nb:TiO2- x Films

NASA Astrophysics Data System (ADS)

Reddy, Y. Ashok Kumar; Shin, Young Bong; Kang, In-Ku; Lee, Hee Chul

2018-03-01

The present study directly addresses the improved bolometric properties by means of different Nb doping concentrations into TiO2- x films. The x-ray diffraction patterns do not display any obvious diffraction peaks, suggesting that all the films deposited at room temperature had an amorphous structure. A small binding energy shift was observed in x-ray photo electron spectroscopy due to the change of chemical composition with Nb doping concentration. All the device samples exhibit linear I- V characteristics, which attests to the formation of good ohmic contact with low contact resistance between the Nb:TiO2- x (TNO) film and the electrode (Ti) material. The performance of the bolometric material can be evaluated through the temperature coefficient of resistance (TCR), and the absolute value of TCR was found to be increased from 2.54% to 2.78% with increasing the Nb doping concentration. The voltage spectral density of 1/ f noise was measured in the frequency range of 1-60 Hz and found to be decreased with increase of Nb doping concentration. As a result, for 1 at.% Nb-doped TNO sample exhibits improved bolometric properties towards the good infrared image sensor device.

High Resolution X-ray Scattering Studies of Structural Phase Transitions in BaFe2-x Cr x As 2

NASA Astrophysics Data System (ADS)

Gaulin, B. D.; Clancy, J. P.; Wagman, J. J.; Sefat, A. S.

2011-03-01

While the effects of electron-doping on the parent compounds of the 122 family of Fe-based superconductors have been extremely well-studied in recent years, far less is known about the influence of hole-doping in compounds such as BaFe 2-x Cr x As 2 . In contrast to the electron-doped 122 systems, the hole-doped compounds do not become superconducting. Furthermore, while the hole-doped compounds exhibit similar structural and magnetic phase transitions, they appear to be much less sensitive to dopant concentration. We have performed high resolution x-ray scattering and magnetic susceptibility measurements on single crystal samples of BaFe 2-x Cr x As 2 for Cr concentrations ranging from 0 <= x <= 0.67 . These measurements allow us to determine the magnetic and structural phase transitions for this series and map out the low temperature phase diagram as a function of doping. In particular, we have carried out detailed measurements of the tetragonal (I4/mmm) to orthorhombic (Fmmm) structural phase transition which reveal how the orthorhombicity of the system evolves with increasing Cr concentration and how this correlates with the values of Ts and Tm .

Degradation of selected industrial dyes using Mg-doped TiO2 polyscales under natural sun light as an alternative driving energy

NASA Astrophysics Data System (ADS)

Shivaraju, H. P.; Midhun, G.; Anil Kumar, K. M.; Pallavi, S.; Pallavi, N.; Behzad, Shahmoradi

2017-11-01

Designing photocatalytic materials with modified functionalities for the utilization of renewable energy sources as an alternative driving energy has attracted much attention in the area of sustainable wastewater treatment applications. Catalyst-assisted advanced oxidation process is an emerging treatment technology for organic pollutants and toxicants in industrial wastewater. Preparation of visible-light-responsive photocatalyst such as Mg-doped TiO2 polyscales was carried out under mild sol-gel technique. Mg-doped TiO2 polyscales were characterized by powder XRD, SEM, FTIR, and optical and photocatalytic activity techniques. The Mg-doped TiO2 showed a mixed phase of anatase and rutile with an excellent crystallinity, structural elucidations, polyscales morphology, consequent shifting of bandgap energy and adequate photocatalytic activities under visible range of light. Mg-doped TiO2 polyscales were investigated for their efficiencies in the degradation of most commonly used industrial dyes in the real-time textile wastewater. Mg-doped TiO2 polyscales showed excellent photocatalytic degradation efficiency in both model industrial dyes (65-95%) and textile wastewater (92%) under natural sunlight as an alternative and renewable driving energy.

Adsorption of sugars on Al- and Ga-doped boron nitride surfaces: A computational study

NASA Astrophysics Data System (ADS)

Darwish, Ahmed A.; Fadlallah, Mohamed M.; Badawi, Ashraf; Maarouf, Ahmed A.

2016-07-01

Molecular adsorption on surfaces is a key element for many applications, including sensing and catalysis. Non-invasive sugar sensing has been an active area of research due to its importance to diabetes care. The adsorption of sugars on a template surface study is at the heart of matter. Here, we study doped hexagonal boron nitride sheets (h-BNNs) as adsorbing and sensing template for glucose and glucosamine. Using first principles calculations, we find that the adsorption of glucose and glucosamine on h-BNNs is significantly enhanced by the substitutional doping of the sheet with Al and Ga. Including long range van der Waals corrections gives adsorption energies of about 2 eV. In addition to the charge transfer occurring between glucose and the Al/Ga-doped BN sheets, the adsorption alters the size of the band gap, allowing for optical detection of adsorption. We also find that Al-doped boron nitride sheet is better than Ga-doped boron nitride sheet to enhance the adsorption energy of glucose and glucosamine. The results of our work can be potentially utilized when designing support templates for glucose and glucosamine.

High-power ultralong-wavelength Tm-doped silica fiber laser cladding-pumped with a random distributed feedback fiber laser

PubMed Central

Jin, Xiaoxi; Du, Xueyuan; Wang, Xiong; Zhou, Pu; Zhang, Hanwei; Wang, Xiaolin; Liu, Zejin

2016-01-01

We demonstrated a high-power ultralong-wavelength Tm-doped silica fiber laser operating at 2153 nm with the output power exceeding 18 W and the slope efficiency of 25.5%. A random distributed feedback fiber laser with the center wavelength of 1173 nm was employed as pump source of Tm-doped fiber laser for the first time. No amplified spontaneous emissions or parasitic oscillations were observed when the maximum output power reached, which indicates that employing 1173 nm random distributed feedback fiber laser as pump laser is a feasible and promising scheme to achieve high-power emission of long-wavelength Tm-doped fiber laser. The output power of this Tm-doped fiber laser could be further improved by optimizing the length of active fiber, reflectivity of FBGs, increasing optical efficiency of pump laser and using better temperature management. We also compared the operation of 2153 nm Tm-doped fiber lasers pumped with 793 nm laser diodes, and the maximum output powers were limited to ~2 W by strong amplified spontaneous emission and parasitic oscillation in the range of 1900–2000 nm. PMID:27416893

High-power ultralong-wavelength Tm-doped silica fiber laser cladding-pumped with a random distributed feedback fiber laser.

PubMed

Jin, Xiaoxi; Du, Xueyuan; Wang, Xiong; Zhou, Pu; Zhang, Hanwei; Wang, Xiaolin; Liu, Zejin

2016-07-15

We demonstrated a high-power ultralong-wavelength Tm-doped silica fiber laser operating at 2153 nm with the output power exceeding 18 W and the slope efficiency of 25.5%. A random distributed feedback fiber laser with the center wavelength of 1173 nm was employed as pump source of Tm-doped fiber laser for the first time. No amplified spontaneous emissions or parasitic oscillations were observed when the maximum output power reached, which indicates that employing 1173 nm random distributed feedback fiber laser as pump laser is a feasible and promising scheme to achieve high-power emission of long-wavelength Tm-doped fiber laser. The output power of this Tm-doped fiber laser could be further improved by optimizing the length of active fiber, reflectivity of FBGs, increasing optical efficiency of pump laser and using better temperature management. We also compared the operation of 2153 nm Tm-doped fiber lasers pumped with 793 nm laser diodes, and the maximum output powers were limited to ~2 W by strong amplified spontaneous emission and parasitic oscillation in the range of 1900-2000 nm.

UV-Vis-NIR spectroelectrochemical and in situ conductance studies of unusual stability of n- and p-doped poly(dimethyldioctylquaterthiophene-alt-oxadiazole) under high cathodic and anodic polarizations.

PubMed

Pomerantz, Z; Levi, M D; Salitra, G; Demadrille, R; Fisyuk, A; Zaban, A; Aurbach, D; Pron, A

2008-02-21

Combined CV studies and UV-Vis-NIR spectroelectrochemical investigations revealed an unusual stability of the p- and n-doped PMOThOD in the wide potential window of 4 V. The n-doping process occurs in this polymer down to -2.7 V (vs. Ag/Ag+) in a non-destructive way with the characteristic development of the omega3 transition as a function of the doping level. In situ electronic transport studies revealed a high conductivity of the n-doped polymer which implies high mobility of the negatively charged carriers in the freshly doped PMOThOD film electrodes. An increase in the cathodic polarization, long-term cycling of the film electrodes, especially of higher thickness, results in a growing contribution of the negatively charged carriers trapping to the redox properties of the PMOThOD. The trapping of the charged carriers reduces gradually the electronic conductance of the PMOThOD film, but its effect on the redox-capacity of the film (in a typical scan rates range up to 50 mV s(-1)) is only minor.

Fabrication of barium titanate doped strontium using co-precipitation method

NASA Astrophysics Data System (ADS)

Iriani, Y.; Yasin, M. A.; Suryana, R.

2018-03-01

Fabrication of barium titanate (BaTiO3/BT) doped strontium (Sr) using co-precipitation method has been successfully conducted. The research aim is to get the best of mole variation of Sr doping to ferroelectric material properties. Doping Sr was varied at 1%, 2%, 3%, 4% and 5% in BaTiO3. Each sample was sintered at temperature of 1100°C with holding time for 6 h and temperature rate at 10°C/min. They were then characterized by XRD instrument to investigate the crystal structure, LCR meter to measure the dielectric constant, and Sawyer Tower circuit to reveal the hysteresis curve. The peaks of XRD shift towards larger angle when mole doping Sr increase. The crystallinity of all samples is above 90% and the crystallite size is in the range of 27 nm to 34 nm. Hysteresis curve from Sawyer Tower testing confirms that all samples are ferroelectric material. The RLC measurement results reveal that the less frequency leads to the higher dielectric constant while the highest dielectric constant belongs to the BT doped 3% of Sr. Therefore, it is the best variation obtained in this research.

Nanostructured N-doped TiO2 marigold flowers for an efficient solar hydrogen production from H2S

NASA Astrophysics Data System (ADS)

Chaudhari, Nilima S.; Warule, Sambhaji S.; Dhanmane, Sushil A.; Kulkarni, Milind V.; Valant, Matjaz; Kale, Bharat B.

2013-09-01

Nitrogen-doped TiO2 nanostructures in the form of marigold flowers have been synthesized for the first time using a facile solvothermal method. The structural analysis has shown that such an N-doped TiO2 system crystallizes in the anatase structure. The optical absorption spectra have clearly shown the shift in the absorption edge towards the visible-light range, which indicates successful nitrogen doping. The nitrogen doping has been further confirmed by photoluminescence and photoemission spectroscopy. Microscopy studies have shown the thin nanosheets (petals) of N-TiO2 with a thickness of ~2-3 nm, assembled in the form of the marigold flower with a high surface area (224 m2 g-1). The N-TiO2 nanostructure with marigold flowers is an efficient photocatalyst for the decomposition of H2S and production of hydrogen under solar light. The maximum hydrogen evolution obtained is higher than other known N-TiO2 systems. It is noteworthy that photohydrogen production using the unique marigold flowers of N-TiO2 from abundant H2S under solar light is hitherto unattempted. The proposed synthesis method can also be utilized to design other hierarchical nanostructured N-doped metal oxides.Nitrogen-doped TiO2 nanostructures in the form of marigold flowers have been synthesized for the first time using a facile solvothermal method. The structural analysis has shown that such an N-doped TiO2 system crystallizes in the anatase structure. The optical absorption spectra have clearly shown the shift in the absorption edge towards the visible-light range, which indicates successful nitrogen doping. The nitrogen doping has been further confirmed by photoluminescence and photoemission spectroscopy. Microscopy studies have shown the thin nanosheets (petals) of N-TiO2 with a thickness of ~2-3 nm, assembled in the form of the marigold flower with a high surface area (224 m2 g-1). The N-TiO2 nanostructure with marigold flowers is an efficient photocatalyst for the decomposition of H2S and production of hydrogen under solar light. The maximum hydrogen evolution obtained is higher than other known N-TiO2 systems. It is noteworthy that photohydrogen production using the unique marigold flowers of N-TiO2 from abundant H2S under solar light is hitherto unattempted. The proposed synthesis method can also be utilized to design other hierarchical nanostructured N-doped metal oxides. Electronic supplementary information (ESI) available: GC-MS graph of the filtrate obtained in solvothermal reaction after 16 h and FESEM images without guanidine carbonate for 16 h. See DOI: 10.1039/c3nr02975a

Thermoelectric transport in surface- and antimony-doped bismuth telluride nanoplates

DOE PAGES

Pettes, Michael Thompson; Kim, Jaehyun; Wu, Wei; ...

2016-07-25

We report the in-plane thermoelectric properties of suspended (Bi 1–xSb x) 2Te 3 nanoplates with x ranging from 0.07 to 0.95 and thicknesses ranging from 9 to 42 nm. The results presented here reveal a trend of increasing p-type behavior with increasing antimony concentration, and a maximum Seebeck coefficient and thermoelectric figure of merit at x ~ 0.5. We additionally tuned extrinsic doping of the surface using a tetrafluoro-tetracyanoquinodimethane (F 4-TCNQ) coating. As a result, the lattice thermal conductivity is found to be below that for undoped ultrathin Bi 2Te 3 nanoplates of comparable thickness and in the range ofmore » 0.2–0.7 W m –1 K –1 at room temperature.« less

Chiral d -wave superconductivity in a triangular surface lattice mediated by long-range interaction

NASA Astrophysics Data System (ADS)

Cao, Xiaodong; Ayral, Thomas; Zhong, Zhicheng; Parcollet, Olivier; Manske, Dirk; Hansmann, Philipp

2018-04-01

Adatom systems on the Si(111) surface have recently attracted an increasing attention as strongly correlated systems with a rich phase diagram. We study these materials by a single band model on the triangular lattice, including 1 /r long-range interaction. Employing the recently proposed TRILEX method, we find an unconventional superconducting phase of chiral d -wave symmetry in hole-doped systems. Contrary to usual scenarios where charge and spin fluctuations are seen to compete, here the superconductivity is driven simultaneously by both charge and spin fluctuations and crucially relies on the presence of the long-range tail of the interaction. We provide an analysis of the relevant collective bosonic modes and predict how a cumulative charge and spin paring mechanism leads to superconductivity in doped silicon adatom materials.