Orientation effect on microwave dielectric properties of Si-integrated Ba0.6Sr0.4TiO3 thin films for frequency agile devices

NASA Astrophysics Data System (ADS)

Kim, Hyun-Suk; Hyun, Tae-Seon; Kim, Ho-Gi; Kim, Il-Doo; Yun, Tae-Soon; Lee, Jong-Chul

2006-07-01

The effect of texture with (100) and (110) preferred orientations on dielectric properties of Ba0.6Sr0.4TiO3 (BST) thin films grown on SrO (9nm) and CeO2 (70nm ) buffered Si substrates, respectively, was investigated. The coplanar waveguide (CPW) phase shifter using (100) oriented BST films on SrO buffered Si exhibited a much-enhanced figure of merit of 24.7°/dB, as compared to that (10.2°/dB) of a CPW phase shifter using (110) oriented BST films on CeO2 buffered Si at 12GHz. This work demonstrates that the microwave properties of the Si-integrated BST thin films are highly correlated with crystal orientation.

Method of depositing epitaxial layers on a substrate

DOEpatents

Goyal, Amit

2003-12-30

An epitaxial article and method for forming the same includes a substrate having a textured surface, and an electrochemically deposited substantially single orientation epitaxial layer disposed on and in contact with the textured surface. The epitaxial article can include an electromagnetically active layer and an epitaxial buffer layer. The electromagnetically active layer and epitaxial buffer layer can also be deposited electrochemically.

Self-Aligned ALD AlOx T-gate Insulator for Gate Leakage Current Suppression in SiNx-Passivated AlGaN/GaN HEMTs

DTIC Science & Technology

2010-01-01

Heterostructure epitaxial material growth was performed by RF plasma-assisted molecular - beam epitaxy (MBE) on a 2-in. semi- insulating 4H SiC wafer. From... beam epitaxy of beryllium-doped GaN buffer layers for AlGaN/GaN HEMTs . J Cryst Growth 2003;251:481–6. [25] Storm DF, Katzer DS, Binari SC, Glaser ER...Shanabrook BV, Roussos JA. Reduction of buffer layer conduction near plasma-assisted molecular - beam epitaxy grown GaN/AlN interfaces by beryllium

Uncovering a new quasi-2D CuO2 plane between the YBa2Cu3O7 and CeO2 buffer layer of coated conductors

NASA Astrophysics Data System (ADS)

Li, Zhi-Xin; Cao, Jin-Jin; Gou, Xiao-Fan; Wang, Tian-Ge; Xue, Feng

2018-01-01

We report a discovery of the quasi-two-dimensional (quasi-2D) CuO2 plane between the superconductor YBa2Cu3O7 (YBCO) and CeO2 buffer layer (mostly used in the fabrication) of coated conductors through the atomistic computer simulations with the molecular dynamics (MD) and first-principle calculations. For an YBCO coated conductor with multilayer structures, the buffer layers deposited onto a substrate are mainly considered to transfer a strong biaxial texture from the substrate to the YBCO layer. To deeply understand the tuning mechanism of the texture transfer, exploring the complete atomic-level picture of the structure between the YBa2Cu3O7/CeO2 interfaces is firstly required. However, the related observation data have not been available due to some big challenges of experimental techniques. With the MD simulations, having tested the accuracy of the potential functions for the YBa2Cu3O7/CeO2 interface, we constructed a total of 54 possible atom stacking models of the interface and identified its most appropriate and stable structure according to the criterion of the interface adhesion energy and the coherent characterization. To further verify the stability of the identified structure, we performed the first-principle calculations to obtain the adhesion energy and developed the general knowledge of the interface structure. Finally, a coherent interface formed with a new built quasi-2D CuO2 plane that is structurally similar to the CuO2 plane inside bulk YBCO was determined.

Epitaxial integration of CoFe2O4 thin films on Si (001) surfaces using TiN buffer layers

NASA Astrophysics Data System (ADS)

Prieto, Pilar; Marco, José F.; Prieto, José E.; Ruiz-Gomez, Sandra; Perez, Lucas; del Real, Rafael P.; Vázquez, Manuel; de la Figuera, Juan

2018-04-01

Epitaxial cobalt ferrite thin films with strong in-plane magnetic anisotropy have been grown on Si (001) substrates using a TiN buffer layer. The epitaxial films have been grown by ion beam sputtering using either metallic, CoFe2, or ceramic, CoFe2O4, targets. X-ray diffraction (XRD) and Rutherford spectrometry (RBS) in random and channeling configuration have been used to determine the epitaxial relationship CoFe2O4 [100]/TiN [100]/Si [100]. Mössbauer spectroscopy, in combination with XRD and RBS, has been used to determine the composition and structure of the cobalt ferrite thin films. The TiN buffer layer induces a compressive strain in the cobalt ferrite thin films giving rise to an in-plane magnetic anisotropy. The degree of in-plane anisotropy depends on the lattice mismatch between CoFe2O4 and TiN, which is larger for CoFe2O4 thin films grown on the reactive sputtering process with ceramic targets.

AlGaSb Buffer Layers for Sb-Based Transistors

DTIC Science & Technology

2010-01-01

transistor ( HEMT ), molecular beam epitaxy (MBE), field-effect transistor (FET), buffer layer INTRODUCTION High-electron-mobility transistors ( HEMTs ) with InAs...monolayers/s. The use of thinner buffer layers reduces molecular beam epitaxial growth time and source consumption. The buffer layers also exhibit...source. In addition, some of the flux from an Sb cell in a molecular beam epitaxy (MBE) system will deposit near the mouth of the cell, eventually

Stress in (Al, Ga)N heterostructures grown on 6H-SiC and Si substrates byplasma-assisted molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Koshelev, O. A.; Nechaev, D. V.; Sitnikova, A. A.; Ratnikov, V. V.; Ivanov, S. V.; Jmerik, V. N.

2017-11-01

The paper describes experimental results on low temperature plasma-assisted molecular beam epitaxy of GaN/AlN heterostructures on both 6H-SiC and Si(111) substrates. We demonstrate that application of migration enhanced epitaxy and metal-modulated epitaxy for growth of AlN nucleation and buffer layers lowers the screw and edge(total)threading dislocation (TD) densities down to 1.7·108 and 2·109 cm-2, respectively, in a 2.8-μm-thick GaN buffer layer grown atop of AlN/6H-SiC. The screw and total TD densities of 1.2·109 and 7.4·109 cm-2, respectively, were achieved in a 1-μm-thickGaN/AlNheterostructure on Si(111). Stress generation and relaxation in GaN/AlN heterostructures were investigated by using multi-beam optical stress sensor (MOSS) to achieve zero substrate curvature at room temperature. It is demonstrated that a 1-μm-thick GaN/AlN buffer layer grown by PA MBE provides planar substrate morphology in the case of growth on Si substrates whereas 5-μm-thick GaN buffer layers have to be used to achieve the same when growing on 6H-SiC substrates.

Two-stage epitaxial growth of vertically-aligned SnO 2 nano-rods on(001) ceria

DOE PAGES

Solovyov, Vyacheslav F.; Wu, Li-jun; Rupich, Martin W.; ...

2014-09-20

Growth of high-aspect ratio oriented tin oxide, SnO 2, nano-rods is complicated by a limited choice of matching substrates. We show that a (001) cerium oxide, CeO 2, surface uniquely enables epitaxial growth of tin-oxide nano-rods via a two-stage process. First, (100) oriented nano-wires coat the ceria surface by lateral growth, forming a uniaxially-textured SnO 2 deposit. Second, vertical SnO 2nano-rods nucleate on the deposit by homoepitaxy. We demonstrate growth of vertically oriented 1-2 μm long nano-rods with an average diameter of ≈20 nm.

Epitaxial growth of YBa2Cu3O7 - delta films on oxidized silicon with yttria- and zirconia-based buffer layers

NASA Astrophysics Data System (ADS)

Pechen, E. V.; Schoenberger, R.; Brunner, B.; Ritzinger, S.; Renk, K. F.; Sidorov, M. V.; Oktyabrsky, S. R.

1993-09-01

A study of epitaxial growth of YBa2Cu3O7-δ films on oxidized Si with yttria- and zirconia-based buffer layers is reported. Using substrates with either SiO2 free or naturally oxidized (100) surfaces of Si it was found that a thin SiO2 layer on top of the Si favors high-quality superconducting film formation. Compared to yttria-stabilized ZrO2 (YSZ) single layers, YSZY2O3 double and YSZ/Y2O3YSZ triple layers allows the deposition of thin YBa2Cu3O7-δ films with improved properties including reduced aging effects. In epitaxial YBa2Cu3O7-δ films grown on the double buffer layers a critical temperature Tc(R=0)=89.5 K and critical current densities of 3.5×106 A/cm2 at 77 K and 1×107 A/cm2 at 66 K were reached.

Schottky barrier detection devices having a 4H-SiC n-type epitaxial layer

DOEpatents

Mandal, Krishna C.; Terry, J. Russell

2016-12-06

A detection device, along with methods of its manufacture and use, is provided. The detection device can include: a SiC substrate defining a substrate surface cut from planar to about 12.degree.; a buffer epitaxial layer on the substrate surface; a n-type epitaxial layer on the buffer epitaxial layer; and a top contact on the n-type epitaxial layer. The buffer epitaxial layer can include a n-type 4H--SiC epitaxial layer doped at a concentration of about 1.times.10.sup.15 cm.sup.-3 to about 5.times.10.sup.18 cm.sup.-3 with nitrogen, boron, aluminum, or a mixture thereof. The n-type epitaxial layer can include a n-type 4H--SiC epitaxial layer doped at a concentration of about 1.times.10.sup.13 cm.sup.-3 to about 5.times.10.sup.15 cm.sup.-3 with nitrogen. The top contact can have a thickness of about 8 nm to about 15 nm.

Development of Mid-infrared GeSn Light Emitting Diodes on a Silicon Substrate

DTIC Science & Technology

2015-04-22

Materials, Heterostrucuture Semiconductor, Light Emitting Devices, Molecular Beam Epitaxy 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF ABSTRACT...LED) structure. Optimization of traditional and hetero- P-i-N structures designed and grown on Ge-buffer Si (001) wafers using molecular beam epitaxy ...designed structures were grown on Ge-buffer Si (001) wafers using molecular beam epitaxy (MBE) with the low-temperature growth technique. (The Ge-buffer

Two-stage epitaxial growth of vertically-aligned SnO2 nano-rods on (001) ceria

DOE Office of Scientific and Technical Information (OSTI.GOV)

Solovyov, VF; Wu, LJ; Rupich, MW

2014-12-15

Growth of high-aspect ratio oriented tin oxide, SnO2, nano-rods is complicated by a limited choice of matching substrates. We show that a (001) cerium oxide, CeO2, surface uniquely enables epitaxial growth of tin-oxide nano-rods via a two-stage process. First, (100) oriented nano-wires coat the ceria surface by lateral growth, forming a uniaxially-textured SnO2 deposit. Second, vertical SnO2 nano-rods nucleate on the deposit by homoepitaxy. We demonstrate growth of vertically oriented 1-2 mu m long nano-rods with an average diameter of approximate to 20 nm. 2014 Elsevier B.V. All rights reserved.

Epitaxial NbN/AlN/NbN tunnel junctions on Si substrates with TiN buffer layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sun, Rui; University of Chinese Academy of Sciences, Beijing 100049; Makise, Kazumasa

We have developed epitaxial NbN/AlN/NbN tunnel junctions on Si (100) substrates with a TiN buffer layer. A 50-nm-thick (200)-oriented TiN thin film was introduced as the buffer layer for epitaxial growth of NbN/AlN/NbN trilayers on Si substrates. The fabricated NbN/AlN/NbN junctions demonstrated excellent tunneling properties with a high gap voltage of 5.5 mV, a large I{sub c}R{sub N} product of 3.8 mV, a sharp quasiparticle current rise with a ΔV{sub g} of 0.4 mV, and a small subgap leakage current. The junction quality factor R{sub sg}/R{sub N} was about 23 for the junction with a J{sub c} of 47 A/cm{supmore » 2} and was about 6 for the junction with a J{sub c} of 3.0 kA/cm{sup 2}. X-ray diffraction and transmission electron microscopy observations showed that the NbN/AlN/NbN trilayers were grown epitaxially on the (200)-orientated TiN buffer layer and had a highly crystalline structure with the (200) orientation.« less

Epitaxial ferromagnetic oxide thin films on silicon with atomically sharp interfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Coux, P. de; CEMES-CNRS, 29 rue Jeanne Marvig, BP 94347, Toulouse Cedex 4; Bachelet, R.

A bottleneck in the integration of functional oxides with silicon, either directly grown or using a buffer, is the usual formation of an amorphous interfacial layer. Here, we demonstrate that ferromagnetic CoFe{sub 2}O{sub 4} films can be grown epitaxially on Si(111) using a Y{sub 2}O{sub 3} buffer layer, and remarkably the Y{sub 2}O{sub 3}/Si(111) interface is stable and remains atomically sharp. CoFe{sub 2}O{sub 4} films present high crystal quality and high saturation magnetization.

Hafnium nitride buffer layers for growth of GaN on silicon

DOEpatents

Armitage, Robert D.; Weber, Eicke R.

2005-08-16

Gallium nitride is grown by plasma-assisted molecular-beam epitaxy on (111) and (001) silicon substrates using hafnium nitride buffer layers. Wurtzite GaN epitaxial layers are obtained on both the (111) and (001) HfN/Si surfaces, with crack-free thickness up to 1.2 {character pullout}m. However, growth on the (001) surface results in nearly stress-free films, suggesting that much thicker crack-free layers could be obtained.

Epitaxial growth and dielectric properties of Pb0.4Sr0.6TiO3 thin films on (00l)-oriented metallic Li0.3Ni0.7O2 coated MgO substrates

NASA Astrophysics Data System (ADS)

Li, X. T.; Du, P. Y.; Mak, C. L.; Wong, K. H.

2007-06-01

Highly (00l)-oriented Li0.3Ni0.7O2 thin films have been fabricated on (001) MgO substrates by pulsed laser deposition. The Pb0.4Sr0.6TiO3 (PST40) thin film deposited subsequently also shows a significant (00l)-oriented texture. Both the PST40 and Li0.3Ni0.7O2 have good epitaxial behavior. The epitaxial growth of the PST40 thin film is more perfect with the Li0.3Ni0.7O2 buffer layer due to the less distortion in the film. The dielectric tunability of the PST40 thin film with Li0.3Ni0.7O2 buffer layer therefore reaches 70%, which is 75% higher than that without Li0.3Ni0.7O2 buffer layer, and the dielectric loss of the PST40 thin film is 0.06.

Strain effect in epitaxial VO2 thin films grown on sapphire substrates using SnO2 buffer layers

NASA Astrophysics Data System (ADS)

Kim, Heungsoo; Bingham, Nicholas S.; Charipar, Nicholas A.; Piqué, Alberto

2017-10-01

Epitaxial VO2/SnO2 thin film heterostructures were deposited on m-cut sapphire substrates via pulsed laser deposition. By adjusting SnO2 (150 nm) growth conditions, we are able to control the interfacial strain between the VO2 film and SnO2 buffer layer such that the semiconductor-to-metal transition temperature (TC) of VO2 films can be tuned without diminishing the magnitude of the transition. It is shown that in-plane tensile strain and out-of-plane compressive strain of the VO2 film leads to a decrease of Tc. Interestingly, VO2 films on SnO2 buffer layers exhibit a structural phase transition from tetragonal-like VO2 to tetragonal-VO2 during the semiconductor-to-metal transition. These results suggest that the strain generated by SnO2 buffer provides an effective way for tuning the TC of VO2 films.

Impact of varying buffer thickness generated strain and threading dislocations on the formation of plasma assisted MBE grown ultra-thin AlGaN/GaN heterostructure on silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chowdhury, Subhra, E-mail: subhra1109@gmail.com; Biswas, Dhrubes; Department of E and E C E, Indian Institute of Technology Kharagpur, Kharagpur 721302

2015-05-15

Plasma-assisted molecular beam epitaxy (PAMBE) growth of ultra-thin Al{sub 0.2}Ga{sub 0.8}N/GaN heterostructures on Si(111) substrate with three buffer thickness (600 nm/400 nm/200 nm) have been reported. An unique growth process has been developed that supports lower temperature epitaxy of GaN buffer which minimizes thermally generated tensile strain through appropriate nitridation and AlN initiated epitaxy for achieving high quality GaN buffer which supports such ultra-thin heterostructures in the range of 10-15Å. It is followed by investigations of role of buffer thickness on formation of ultra-thin Al{sub 0.2}Ga{sub 0.8}N/GaN heterostructure, in terms of stress-strain and threading dislocation (TD). Structural characterization were performedmore » by High-Resolution X-Ray Diffraction (HRXRD), room-temperature Photoluminescence (RT-PL), High Resolution Transmission Electron Microscopy (HRTEM) and Atomic Force Microscopy (AFM). Analysis revealed increasing biaxial tensile stress of 0.6918 ± 0.04, 1.1084, 1.1814 GPa in heterostructures with decreasing buffer thickness of 600, 400, 200 nm respectively which are summed up with residual tensile strain causing red-shift in RT-PL peak. Also, increasing buffer thickness drastically reduced TD density from the order 10{sup 10} cm{sup −2} to 10{sup 8} cm{sup −2}. Surface morphology through AFM leads to decrease of pits and root mean square value with increasing buffer thickness which are resulted due to reduction of combined effect of strain and TDs.« less

Conductive and robust nitride buffer layers on biaxially textured substrates

DOEpatents

Sankar, Sambasivan [Chicago, IL; Goyal, Amit [Knoxville, TN; Barnett, Scott A [Evanston, IL; Kim, Ilwon [Skokie, IL; Kroeger, Donald M [Knoxville, TN

2009-03-31

The present invention relates to epitaxial, electrically conducting and mechanically robust, cubic nitride buffer layers deposited epitaxially on biaxially textured substrates such as metals and alloys. The invention comprises of a biaxially textured substrate with epitaxial layers of nitrides. The invention also discloses a method to form such epitaxial layers using a high rate deposition method as well as without the use of forming gases. The invention further comprises epitaxial layers of oxides on the biaxially textured nitride layer. In some embodiments the article further comprises electromagnetic devices which may have superconducting properties.

The Effect of Buffer Types on the In0.82Ga0.18As Epitaxial Layer Grown on an InP (100) Substrate.

PubMed

Zhang, Min; Guo, Zuoxing; Zhao, Liang; Yang, Shen; Zhao, Lei

2018-06-08

In 0.82 Ga 0.18 As epitaxial layers were grown on InP (100) substrates at 530 °C by a low-pressure metalorganic chemical vapor deposition (LP-MOCVD) technique. The effects of different buffer structures, such as a single buffer layer, compositionally graded buffer layers, and superlattice buffer layers, on the crystalline quality and property were investigated. Double-crystal X-ray diffraction (DC-XRD) measurement, Raman scattering spectrum, and Hall measurements were used to evaluate the crystalline quality and electrical property. Scanning electron microscope (SEM), atomic force microscope (AFM), and transmission electron microscope (TEM) were used to characterize the surface morphology and microstructure, respectively. Compared with the In 0.82 Ga 0.18 As epitaxial layer directly grown on an InP substrate, the quality of the sample is not obviously improved by using a single In 0.82 Ga 0.18 As buffer layer. By introducing the graded In x Ga 1−x As buffer layers, it was found that the dislocation density in the epitaxial layer significantly decreased and the surface quality improved remarkably. In addition, the number of dislocations in the epitaxial layer greatly decreased under the combined action of multi-potential wells and potential barriers by the introduction of a In 0.82 Ga 0.18 As/In 0.82 Al 0.18 As superlattice buffer. However, the surface subsequently roughened, which may be explained by surface undulation.

Methods for improved growth of group III nitride buffer layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Melnik, Yurity; Chen, Lu; Kojiri, Hidehiro

Methods are disclosed for growing high crystal quality group III-nitride epitaxial layers with advanced multiple buffer layer techniques. In an embodiment, a method includes forming group III-nitride buffer layers that contain aluminum on suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. A hydrogen halide or halogen gas is flowing into the growth zone during deposition of buffer layers to suppress homogeneous particle formation. Some combinations of low temperature buffers that contain aluminum (e.g., AlN, AlGaN) and high temperature buffers that contain aluminum (e.g., AlN, AlGaN) may be used to improve crystal quality and morphologymore » of subsequently grown group III-nitride epitaxial layers. The buffer may be deposited on the substrate, or on the surface of another buffer. The additional buffer layers may be added as interlayers in group III-nitride layers (e.g., GaN, AlGaN, AlN).« less

Semiconductor films on flexible iridium substrates

DOEpatents

Goyal, Amit

2005-03-29

A laminate semiconductor article includes a flexible substrate, an optional biaxially textured oxide buffer system on the flexible substrate, a biaxially textured Ir-based buffer layer on the substrate or the buffer system, and an epitaxial layer of a semiconductor. Ir can serve as a substrate with an epitaxial layer of a semiconductor thereon.

Species differences in the hydrolysis of 2-cyanoethylene oxide, the epoxide metabolite of acrylonitrile.

PubMed

Kedderis, G L; Batra, R

1993-04-01

The carcinogenic effects of acrylonitrile in rats are believed to be mediated by its DNA-reactive epoxide metabolite, 2-cyanoethylene oxide (CEO). Previous studies have shown that conjugation with glutathione is the major detoxication pathway for both acrylonitrile and CEO. This study investigated the role of epoxide hydrolase in the hydrolysis of CEO by HPLC analysis of the products from [2,3-14C]CEO. CEO is a relatively stable epoxide with a half-life of 99 min at 37 degrees C in sodium phosphate buffer (0.1 M), pH 7.3. Incubation with hepatic microsomes or cytosols from male F-344 rats or B6C3F1 mice did not enhance the rate of hydrolysis of CEO (0.69 nmol/min). Human hepatic microsomes significantly increased the rate of hydrolysis of CEO, whereas human hepatic cytosols did not. Human hepatic microsomal hydrolysis activity was heat-sensitive and potently inhibited by 1,1,1-trichloropropene oxide (IC50 of 23 microM), indicating that epoxide hydrolase was the catalyst. The hydrolysis of CEO catalyzed by hepatic microsomes from six individuals exhibited normal saturation kinetics with KM ranging from 0.6 to 3.2 mM and Vmax from 8.3 to 18.8 nmol hydrolysis products/min/mg protein. Pretreatment of rodents with phenobarbital or acetone induced hepatic microsomal hydrolysis activity toward CEO, whereas treatment with beta-naphthoflavone, dexamethasone or acrylonitrile itself was without effect. These data show that humans possess an additional detoxication pathway for CEO that is not active in rodents (but is inducible). The presence of an active epoxide hydrolase hydrolysis activity toward CEO in humans should be considered in assessments of cancer risk from acrylonitrile exposure.

Stabilizing new bismuth compounds in thin film form [Stabilizing new thin film materials in bismuth compounds

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Aiping; Zhou, Honghui; Zhu, Yuanyuan

2016-11-10

Growth of unexpected phases from a composite target of BiFeO 3:BiMnO 3 and/or BiFeO 3:BiCrO 3 has been explored using pulsed laser deposition. The Bi 2FeMnO 6 tetragonal phase can be grown directly on SrTiO 3 (STO) substrate, while two phases (S1 and S2) were found to grow on LaAlO 3 (LAO) substrates with narrow growth windows. However, introducing a thin CeO 2 buffer layer effectively broadens the growth window for the pure S1 phase, regardless of the substrate. Moreover, we discovered two new phases (X1 and X2) when growing on STO substrates using a BiFeO 3:BiCrO 3 target. Puremore » X2 phase can be obtained on CeO 2-buffered STO and LAO substrates. This work demonstrates that some unexpected phases can be stabilized in a thin film form by using composite perovskite BiRO 3 (R = Cr, Mn, Fe, Co, Ni) targets. Moreover, it also indicates that CeO 2 can serve as a general template for the growth of bismuth compounds with potential room-temperature multiferroicity.« less

La0.7Sr0.3MnO3: A single, conductive-oxide buffer layer for the development of YBa2Cu3O7-δ coated conductors

NASA Astrophysics Data System (ADS)

Aytug, T.; Paranthaman, M.; Kang, B. W.; Sathyamurthy, S.; Goyal, A.; Christen, D. K.

2001-10-01

Coated conductor applications in power technologies require stabilization of the high-temperature superconducting (HTS) layers against thermal runaway. Conductive La0.7Sr0.3MnO3 (LSMO) has been epitaxially grown on biaxially textured Ni substrates as a single buffer layer. The subsequent epitaxial growth of YBa2Cu3O7-δ (YBCO) coatings by pulsed laser deposition yielded self-field critical current densities (Jc) of 0.5×106A/cm2 at 77 K, and provided good electrical connectivity over the entire structure (HTS+conductive-buffer+metal substrate). Property characterizations of YBCO/LSMO/Ni architecture revealed excellent crystallographic and morphological properties. These results have demonstrated that LSMO, used as a single, conductive buffer layer, may offer potential for use in fully stabilized YBCO coated conductors.

Conductive and robust nitride buffer layers on biaxially textured substrates

DOEpatents

Sankar, Sambasivan; Goyal, Amit; Barnett, Scott A.; Kim, Ilwon; Kroeger, Donald M.

2004-08-31

The present invention relates to epitaxial, electrically conducting and mechanically robust, cubic nitride buffer layers deposited epitaxially on biaxially textured substrates such as metal and alloys. The invention comprises of a biaxially textured substrate with epitaxial layers of nitrides. The invention also discloses a method to form such epitaxial layers using a high rate deposition method as well as without the use of forming gases. The invention further comprises epitaxial layers of oxides on the biaxially textured nitride layers. In some embodiments the article further comprises electromagnetic devices which may be super conducting properties.

Ferroelectricity in epitaxial Y-doped HfO2 thin film integrated on Si substrate

NASA Astrophysics Data System (ADS)

Lee, K.; Lee, T. Y.; Yang, S. M.; Lee, D. H.; Park, J.; Chae, S. C.

2018-05-01

We report on the ferroelectricity of a Y-doped HfO2 thin film epitaxially grown on Si substrate, with an yttria-stabilized zirconia buffer layer pre-deposited on the substrate. Piezoresponse force microscopy results show the ferroelectric domain pattern, implying the existence of ferroelectricity in the epitaxial HfO2 film. The epitaxially stabilized HfO2 film in the form of a metal-ferroelectric-insulator-semiconductor structure exhibits ferroelectric hysteresis with a clear ferroelectric switching current in polarization-voltage measurements. The HfO2 thin film also demonstrates ferroelectric retention comparable to that of current perovskite-based metal-ferroelectric-insulator-semiconductor structures.

Heterogeneous Integration of Epitaxial Ge on Si using AlAs/GaAs Buffer Architecture: Suitability for Low-power Fin Field-Effect Transistors

PubMed Central

Hudait, Mantu K.; Clavel, Michael; Goley, Patrick; Jain, Nikhil; Zhu, Yan

2014-01-01

Germanium-based materials and device architectures have recently appeared as exciting material systems for future low-power nanoscale transistors and photonic devices. Heterogeneous integration of germanium (Ge)-based materials on silicon (Si) using large bandgap buffer architectures could enable the monolithic integration of electronics and photonics. In this paper, we report on the heterogeneous integration of device-quality epitaxial Ge on Si using composite AlAs/GaAs large bandgap buffer, grown by molecular beam epitaxy that is suitable for fabricating low-power fin field-effect transistors required for continuing transistor miniaturization. The superior structural quality of the integrated Ge on Si using AlAs/GaAs was demonstrated using high-resolution x-ray diffraction analysis. High-resolution transmission electron microscopy confirmed relaxed Ge with high crystalline quality and a sharp Ge/AlAs heterointerface. X-ray photoelectron spectroscopy demonstrated a large valence band offset at the Ge/AlAs interface, as compared to Ge/GaAs heterostructure, which is a prerequisite for superior carrier confinement. The temperature-dependent electrical transport properties of the n-type Ge layer demonstrated a Hall mobility of 370 cm2/Vs at 290 K and 457 cm2/Vs at 90 K, which suggests epitaxial Ge grown on Si using an AlAs/GaAs buffer architecture would be a promising candidate for next-generation high-performance and energy-efficient fin field-effect transistor applications. PMID:25376723

Advanced Technologies for Heterodyne Radio Astronomy Instrumentation - Part1 By A. Pavolotsky, and Advanced Technologies for Heterodyne Radio Astronomy Instrumentation - Part2 By V. Desmaris

NASA Astrophysics Data System (ADS)

Desmaris, Vincent

2018-01-01

We present the advanced micro/nano technological engineering at the atomic level producing state-of-the-art epitaxial NbN thin-films on GaN buffer layers. Furthermore, we report the outstanding performance of the hot electron bolometers fabricated on epitaxial NbN thin films on GaN buffer layers. Finally we present advanced passive devices such as waveguide hybrids, IF hybrids and combiners for the realization of heterodyne THz receivers.

van der Waals epitaxy of SnS film on single crystal graphene buffer layer on amorphous SiO2/Si

NASA Astrophysics Data System (ADS)

Xiang, Yu; Yang, Yunbo; Guo, Fawen; Sun, Xin; Lu, Zonghuan; Mohanty, Dibyajyoti; Bhat, Ishwara; Washington, Morris; Lu, Toh-Ming; Wang, Gwo-Ching

2018-03-01

Conventional hetero-epitaxial films are typically grown on lattice and symmetry matched single crystal substrates. We demonstrated the epitaxial growth of orthorhombic SnS film (∼500 nm thick) on single crystal, monolayer graphene that was transferred on the amorphous SiO2/Si substrate. Using X-ray pole figure analysis we examined the structure, quality and epitaxy relationship of the SnS film grown on the single crystal graphene and compared it with the SnS film grown on commercial polycrystalline graphene. We showed that the SnS films grown on both single crystal and polycrystalline graphene have two sets of orientation domains. However, the crystallinity and grain size of the SnS film improve when grown on the single crystal graphene. Reflection high-energy electron diffraction measurements show that the near surface texture has more phases as compared with that of the entire film. The surface texture of a film will influence the growth and quality of film grown on top of it as well as the interface formed. Our result offers an alternative approach to grow a hetero-epitaxial film on an amorphous substrate through a single crystal graphene buffer layer. This strategy of growing high quality epitaxial thin film has potential applications in optoelectronics.

van der Waals epitaxy of CdTe thin film on graphene

NASA Astrophysics Data System (ADS)

Mohanty, Dibyajyoti; Xie, Weiyu; Wang, Yiping; Lu, Zonghuan; Shi, Jian; Zhang, Shengbai; Wang, Gwo-Ching; Lu, Toh-Ming; Bhat, Ishwara B.

2016-10-01

van der Waals epitaxy (vdWE) facilitates the epitaxial growth of materials having a large lattice mismatch with the substrate. Although vdWE of two-dimensional (2D) materials on 2D materials have been extensively studied, the vdWE for three-dimensional (3D) materials on 2D substrates remains a challenge. It is perceived that a 2D substrate passes little information to dictate the 3D growth. In this article, we demonstrated the vdWE growth of the CdTe(111) thin film on a graphene buffered SiO2/Si substrate using metalorganic chemical vapor deposition technique, despite a 46% large lattice mismatch between CdTe and graphene and a symmetry change from cubic to hexagonal. Our CdTe films produce a very narrow X-ray rocking curve, and the X-ray pole figure analysis showed 12 CdTe (111) peaks at a chi angle of 70°. This was attributed to two sets of parallel epitaxy of CdTe on graphene with a 30° relative orientation giving rise to a 12-fold symmetry in the pole figure. First-principles calculations reveal that, despite the relatively small energy differences, the graphene buffer layer does pass epitaxial information to CdTe as the parallel epitaxy, obtained in the experiment, is energetically favored. The work paves a way for the growth of high quality CdTe film on a large area as well as on the amorphous substrates.

Control of metamorphic buffer structure and device performance of In(x)Ga(1-x)As epitaxial layers fabricated by metal organic chemical vapor deposition.

PubMed

Nguyen, H Q; Yu, H W; Luc, Q H; Tang, Y Z; Phan, V T H; Hsu, C H; Chang, E Y; Tseng, Y C

2014-12-05

Using a step-graded (SG) buffer structure via metal-organic chemical vapor deposition, we demonstrate a high suitability of In0.5Ga0.5As epitaxial layers on a GaAs substrate for electronic device application. Taking advantage of the technique's precise control, we were able to increase the number of SG layers to achieve a fairly low dislocation density (∼10(6) cm(-2)), while keeping each individual SG layer slightly exceeding the critical thickness (∼80 nm) for strain relaxation. This met the demanded but contradictory requirements, and even offered excellent scalability by lowering the whole buffer structure down to 2.3 μm. This scalability overwhelmingly excels the forefront studies. The effects of the SG misfit strain on the crystal quality and surface morphology of In0.5Ga0.5As epitaxial layers were carefully investigated, and were correlated to threading dislocation (TD) blocking mechanisms. From microstructural analyses, TDs can be blocked effectively through self-annihilation reactions, or hindered randomly by misfit dislocation mechanisms. Growth conditions for avoiding phase separation were also explored and identified. The buffer-improved, high-quality In0.5Ga0.5As epitaxial layers enabled a high-performance, metal-oxide-semiconductor capacitor on a GaAs substrate. The devices displayed remarkable capacitance-voltage responses with small frequency dispersion. A promising interface trap density of 3 × 10(12) eV(-1) cm(-2) in a conductance test was also obtained. These electrical performances are competitive to those using lattice-coherent but pricey InGaAs/InP systems.

Epitaxial growth of lead zirconium titanate thin films on Ag buffered Si substrates using rf sputtering

NASA Astrophysics Data System (ADS)

Wang, Chun; Laughlin, David E.; Kryder, Mark H.

2007-04-01

Epitaxial lead zirconium titanate (PZT) (001) thin films with a Pt bottom electrode were deposited by rf sputtering onto Si(001) single crystal substrates with a Ag buffer layer. Both PZT(20/80) and PZT(53/47) samples were shown to consist of a single perovskite phase and to have the (001) orientation. The orientation relationship was determined to be PZT(001)[110]‖Pt(001)[110]‖Ag(001)[110]‖Si(001)[110]. The microstructure of the multilayer was studied using transmission electron microscopy (TEM). The electron diffraction pattern confirmed the epitaxial relationship between each layer. The measured remanent polarization Pr and coercive field Ec of the PZT(20/80) thin film were 26μC /cm2 and 110kV/cm, respectively. For PZT(53/47), Pr was 10μC /cm2 and Ec was 80kV/cm.

Molecular beam epitaxy growth of high electron mobility InAs/AlSb deep quantum well structure

NASA Astrophysics Data System (ADS)

Wang, Juan; Wang, Guo-Wei; Xu, Ying-Qiang; Xing, Jun-Liang; Xiang, Wei; Tang, Bao; Zhu, Yan; Ren, Zheng-Wei; He, Zhen-Hong; Niu, Zhi-Chuan

2013-07-01

InAs/AlSb deep quantum well (QW) structures with high electron mobility were grown by molecular beam epitaxy (MBE) on semi-insulating GaAs substrates. AlSb and Al0.75Ga0.25Sb buffer layers were grown to accommodate the lattice mismatch (7%) between the InAs/AlSb QW active region and GaAs substrate. Transmission electron microscopy shows abrupt interface and atomic force microscopy measurements display smooth surface morphology. Growth conditions of AlSb and Al0.75Ga0.25Sb buffer were optimized. Al0.75Ga0.25Sb is better than AlSb as a buffer layer as indicated. The sample with optimal Al0.75Ga0.25Sb buffer layer shows a smooth surface morphology with root-mean-square roughness of 6.67 Å. The electron mobility has reached as high as 27 000 cm2/Vs with a sheet density of 4.54 × 1011/cm2 at room temperature.

LPE growth of crack-free PbSe layers on Si(100) using MBE-Grown PbSe/BaF2CaF2 buffer layers

NASA Astrophysics Data System (ADS)

Strecker, B. N.; McCann, P. J.; Fang, X. M.; Hauenstein, R. J.; O'Steen, M.; Johnson, M. B.

1997-05-01

Crack-free PbSe on (100)-oriented Si has been obtained by a combination of liquid phase epitaxy (LPE) and molecular beam epitaxy (MBE) techniques. MBE is employed first to grow a PbSe/BaF2/CaF2 buffer structure on the (100)-oriented Si. A 2.5 μm thick PbSe layer is then grown by LPE. The LPE-grown PbSe displays excellent surface morphology and is continuous over the entire 8×8 mm2 area of growth. This result is surprising because of the large mismatch in thermal expansion coefficients between PbSe and Si. Previous attempts to grow crack-free PbSe by MBE alone using similar buffer structures on (100)-oriented Si have been unsuccessful. It is speculated that the large concentration of Se vacancies in the LPE-grown PbSe layer may allow dislocation climb along higher order slip planes, providing strain relaxation.

Photovoltaic effect of ferroelectric Pb(Zr0.52,Ti0.48)O3 deposited on SrTiO3 buffered n-GaAs by laser molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Zhou, Yunxia; Zhu, Jun; Liu, Xingpeng; Wu, Zhipeng

Ferroelectric Pb(Zr0.52,Ti0.48)O3(PZT) thin film was grown on n-type GaAs (001) substrate with SrTiO3 (STO) buffer layer by laser molecular beam epitaxy (L-MBE). The epitaxial process of the STO was in situ monitored by reflection high-energy electron diffraction (RHEED). The crystallographical growth orientation relationship was revealed to be (002) 〈100〉 PZT//(002) 〈100〉 STO//(001) 〈110〉 GaAs by RHEED and X-ray diffraction (XRD). It was found that a small lattice mismatch between PZT and GaAs with a 45∘ in-plane rotation relationship can be formed by inserting of a buffer layer STO. Besides, the enhanced electrical properties of the heterostructure were obtained with the short-circuit photocurrent increased to 52mA/cm2 and the better power conversation efficiency increased by 20% under AM1.5G (100mW/cm2) illumination. The work could provide a way for the application of this kind of heterostructure with high photocurrent response in optoelectronic thin film devices.

Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs.

PubMed

Shih, Huan-Yu; Shiojiri, Makoto; Chen, Ching-Hsiang; Yu, Sheng-Fu; Ko, Chung-Ting; Yang, Jer-Ren; Lin, Ray-Ming; Chen, Miin-Jang

2015-09-02

High threading dislocation (TD) density in GaN-based devices is a long unresolved problem because of the large lattice mismatch between GaN and the substrate, which causes a major obstacle for the further improvement of next-generation high-efficiency solid-state lighting and high-power electronics. Here, we report InGaN/GaN LEDs with ultralow TD density and improved efficiency on a sapphire substrate, on which a near strain-free GaN compliant buffer layer was grown by remote plasma atomic layer deposition. This "compliant" buffer layer is capable of relaxing strain due to the absorption of misfit dislocations in a region within ~10 nm from the interface, leading to a high-quality overlying GaN epilayer with an unusual TD density as low as 2.2 × 10(5) cm(-2). In addition, this GaN compliant buffer layer exhibits excellent uniformity up to a 6" wafer, revealing a promising means to realize large-area GaN hetero-epitaxy for efficient LEDs and high-power transistors.

Method of deforming a biaxially textured buffer layer on a textured metallic substrate and articles therefrom

DOEpatents

Lee, Dominic F.; Kroeger, Donald M.; Goyal, Amit

2000-01-01

The present invention provides methods and biaxially textured articles having a deformed epitaxial layer formed therefrom for use with high temperature superconductors, photovoltaic, ferroelectric, or optical devices. A buffer layer is epitaxially deposited onto biaxially-textured substrates and then mechanically deformed. The deformation process minimizes or eliminates grooves, or other irregularities, formed on the buffer layer while maintaining the biaxial texture of the buffer layer. Advantageously, the biaxial texture of the buffer layer is not altered during subsequent heat treatments of the deformed buffer. The present invention provides mechanical densification procedures which can be incorporated into the processing of superconducting films through the powder deposit or precursor approaches without incurring unfavorable high-angle grain boundaries.

Process for growing epitaxial gallium nitride and composite wafers

DOEpatents

Weber, Eicke R.; Subramanya, Sudhir G.; Kim, Yihwan; Kruger, Joachim

2003-05-13

A novel growth procedure to grow epitaxial Group III metal nitride thin films on lattice-mismatched substrates is proposed. Demonstrated are the quality improvement of epitaxial GaN layers using a pure metallic Ga buffer layer on c-plane sapphire substrate. X-ray rocking curve results indicate that the layers had excellent structural properties. The electron Hall mobility increases to an outstandingly high value of .mu.>400 cm.sup.2 /Vs for an electron background concentration of 4.times.10.sup.17 cm.sup.-3.

Cerium oxide nanoparticles, combining antioxidant and UV shielding properties, prevent UV-induced cell damage and mutagenesis

NASA Astrophysics Data System (ADS)

Caputo, Fanny; de Nicola, Milena; Sienkiewicz, Andrzej; Giovanetti, Anna; Bejarano, Ignacio; Licoccia, Silvia; Traversa, Enrico; Ghibelli, Lina

2015-09-01

Efficient inorganic UV shields, mostly based on refracting TiO2 particles, have dramatically changed the sun exposure habits. Unfortunately, health concerns have emerged from the pro-oxidant photocatalytic effect of UV-irradiated TiO2, which mediates toxic effects on cells. Therefore, improvements in cosmetic solar shield technology are a strong priority. CeO2 nanoparticles are not only UV refractors but also potent biological antioxidants due to the surface 3+/4+ valency switch, which confers anti-inflammatory, anti-ageing and therapeutic properties. Herein, UV irradiation protocols were set up, allowing selective study of the extra-shielding effects of CeO2vs. TiO2 nanoparticles on reporter cells. TiO2 irradiated with UV (especially UVA) exerted strong photocatalytic effects, superimposing their pro-oxidant, cell-damaging and mutagenic action when induced by UV, thereby worsening the UV toxicity. On the contrary, irradiated CeO2 nanoparticles, via their Ce3+/Ce4+ redox couple, exerted impressive protection on UV-treated cells, by buffering oxidation, preserving viability and proliferation, reducing DNA damage and accelerating repair; strikingly, they almost eliminated mutagenesis, thus acting as an important tool to prevent skin cancer. Interestingly, CeO2 nanoparticles also protect cells from the damage induced by irradiated TiO2, suggesting that these two particles may also complement their effects in solar lotions. CeO2 nanoparticles, which intrinsically couple UV shielding with biological and genetic protection, appear to be ideal candidates for next-generation sun shields.

Uniformity of dc and rf performance of MBE-grown AlGaN/GaN HEMTS on HVPE-grown buffers

NASA Astrophysics Data System (ADS)

Gillespie, J. K.; Fitch, R. C.; Moser, N.; Jenkins, T.; Sewell, J.; Via, D.; Crespo, A.; Dabiran, A. M.; Chow, P. P.; Osinsky, A.; Mastro, M. A.; Tsvetkov, D.; Soukhoveev, V.; Usikov, A.; Dmitriev, V.; Luo, B.; Pearton, S. J.; Ren, F.

2003-10-01

AlGaN/GaN high electron mobility transistors (HEMTs) were grown by molecular beam epitaxy (MBE) on 2 in. diameter GaN buffer layers grown by hydride vapor epitaxy (HVPE) on sapphire substrates. HEMTs with 1 μm gate length displayed excellent dc and rf performance uniformity with up to 258 separate devices measured for each parameter. The drain-source saturation current was 561 mA with a standard deviation of 1.9% over the 2 in. diameter, with a corresponding transconductance of 118 ± 3.9 mS/mm. The threshold voltage was -5.3 ± 0.07 V. The rf performance uniformity was equally good, with an fT of 8.6 ± 0.8 GHz and fmax of 12.8 ± 2.5 GHz. The results show the excellent uniformity of the MBE technique for producing AlGaN/GaN HEMTs and also the ability of HVPE to provide high quality buffers at low cost.

Effect of as Passivation on Vapor-Phase Epitaxial Growth of Ge on (211)Si as a Buffer Layer for CdTe Epitaxy

DTIC Science & Technology

2011-04-07

PALOSZ,5 , SUDHIR TRIVEDI,5 , PRIYALAL WIJEWARNASURIYA,3 , ISHWARA BHAT2, Brimrose Corporation of America 19 Loveton Circle Hunt Valley Loveton...Polytechnic Institute, Troy, NY 12180, USA. 5.— Brimrose Corporation of America, Sparks, MD 21152, USA. 6.—e-mail: shints@rpi.edu We report an

Structural characteristics of a non-polar ZnS layer on a ZnO buffer layer formed on a sapphire substrate by mist chemical vapor deposition

NASA Astrophysics Data System (ADS)

Okita, Koshi; Inaba, Katsuhiko; Yatabe, Zenji; Nakamura, Yusui

2018-06-01

ZnS is attractive as a material for low-cost light-emitting diodes. In this study, a non-polar ZnS layer was epitaxially grown on a sapphire substrate by inserting a ZnO buffer layer between ZnS and sapphire. The ZnS and ZnO layers were grown by a mist chemical vapor deposition system with a simple setup operated under atmospheric pressure. The sample was characterized by high-resolution X-ray diffraction measurements including 2θ/ω scans, rocking curves, and reciprocal space mapping. The results showed that an m-plane wurtzite ZnS layer grew epitaxially on an m-plane wurtzite ZnO buffer layer formed on the m-plane sapphire substrate to provide a ZnS/ZnO/sapphire structure.

Microstructure and Mechanics of Superconductor Epitaxy via the Chemical Solution Deposition Method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Frederick F. Lange

2006-11-30

Executive Summary: Initially the funds were sufficient funds were awarded to support one graduate student and one post-doc. Lange, though other funds, also supported a graduate intern from ETH Zurich, Switzerland for a period of 6 months. The initial direction was to study the chemical solution deposition method to understand the microstructural and mechanical phenomena that currently limit the production of thick film, reliable superconductor wires. The study was focused on producing thicker buffer layer(s) on Ni-alloy substrates produced by the RABiTS method. It focused on the development of the microstructure during epitaxy, and the mechanical phenomena that produce cracksmore » during dip-coating, pyrolysis (decomposition of precursors during heating), crystallization and epitaxy. The initial direction of producing thicker layers of a know buffer layer material was redirected by co-workers at ORNL, in an attempt to epitaxially synthesize a potential buffer layer material, LaMnO3, via the solution route. After a more than a period of 6 months that showed that the LaMnO3 reacted with the Ni-W substrate at temperatures that could produce epitaxy, reviewers at the annual program review strongly recommended that the research was not yielding positive results. The only positive result presented at the meeting was that much thicker films could be produce by incorporating a polymer into the precursor that appeared to increase the precursor’s resistance to crack growth. Thus, to continue the program, the objectives were changed to find compositions with the perovskite structure that would be a) chemically compatible with either the Ni-W RABiTS or the MgO IBAD Ni-alloy substrates, and produce a better lattice parameter fit between either of the two substrates. At the start of the second year, the funding was reduced to 2/3’s of the first year level, which required the termination of the post-doc after approximately 5 months into the second year. From then on, further funding was intermittent to say the least, and funding to support the student and the research expenses has to be supplemented by Lange’s gift funds. During the first part of the second year, strontium zirconate was identified as an alternative to lanthanum manganite as a buffer layer for use on the IBAD MgO superconducting wire. A lattice parameter of 4.101 Angstroms offers a reduced lattice mismatch between the MgO and SrZrO3. Studies were focused on investigating hybrid precursor routes, combining Sr acetate with a number of different Zr alkoxides. Initial results from heat treating precursors to form powders are positive with the formation of orthorhombic SrZrO3 at temperatures between 800°C and 1100°C under a reducing atmosphere of Ar – 5% H2. Buffer layer research on RABiTS substrates were centered on GdAlO3 (3.71 Å) and YAlO3 (3.68 Å) buffer layer materials. Powder experiments in YAlO3 have shown the perovskite phase to be metastable at processing temperatures below 1500 °C. Experiments involving spin coating of YAlO3 precursors have found significant problems involved with wettability of the YAlO3 precursor (Yttrium acetate, Aluminum tri-sec butoxide, DI water and Formic Acid) on RABiTS substrates; this, and the demise of the funds precluded further research using YAlO3. The diminished funds for the second year, and the small, tricked funds during the third year lead to a redirection of the student to another research area., and a stop to any experimental achievements that were much too ambition relative to the available funds. The only positive results obtained during this latter period was the understanding why two dissimilar structures could result in an epitaxial relation. It was shown that two rules of crystal chemistry, cation/anion coordination and charge balance, could be applied to understand the epitaxy of SrTiO3 on Ni c(2 X 2)S, TiO2 (anatase) on LaAlO3, TiO2 (rutile) on r-plane Al2O3, and Zr1-x(Yx)O2 on (0001) Al2O3. This new understanding of the interface between two dissimilar structures has important implications that include the buffer layers used for the superconductor program, namely, the epitaxy of perovskites such as the epitaxy of SrTiO3 on the Ni c(2 X 2)S wire. This discovery is the major part of the finial report that follows.« less

One-step Ge/Si epitaxial growth.

PubMed

Wu, Hung-Chi; Lin, Bi-Hsuan; Chen, Huang-Chin; Chen, Po-Chin; Sheu, Hwo-Shuenn; Lin, I-Nan; Chiu, Hsin-Tien; Lee, Chi-Young

2011-07-01

Fabricating a low-cost virtual germanium (Ge) template by epitaxial growth of Ge films on silicon wafer with a Ge(x)Si(1-x) (0 < x < 1) graded buffer layer was demonstrated through a facile chemical vapor deposition method in one step by decomposing a hazardousless GeO(2) powder under hydrogen atmosphere without ultra-high vacuum condition and then depositing in a low-temperature region. X-ray diffraction analysis shows that the Ge film with an epitaxial relationship is along the in-plane direction of Si. The successful growth of epitaxial Ge films on Si substrate demonstrates the feasibility of integrating various functional devices on the Ge/Si substrates.

The effects of the porous buffer layer and doping with dysprosium on internal stresses in the GaInP:Dy/por-GaAs/GaAs(100) heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seredin, P. V.; Gordienko, N. N.; Glotov, A. V.

2009-08-15

In structures with a porous buffer layer, residual internal stresses caused by a mismatch between the crystal-lattice parameters of the epitaxial GaInP alloy and the GaAs substrate are redistributed to the porous layer that acts as a buffer and is conducive to disappearance of internal stresses. Doping of the epitaxial layer with dysprosium exerts a similar effect on the internal stresses in the film-substrate structure.

Plasma assisted molecular beam epitaxy growth and effect of varying buffer thickness on the formation of ultra-thin In{sub 0.17}Al{sub 0.83}N/GaN heterostructure on Si(111)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chowdhury, Subhra, E-mail: subhra1109@gmail.com; Biswas, Dhrubes; Department of E and E C E, Indian Institute of Technology Kharagpur, Kharagpur 721302

2015-02-23

This work reports on the detailed plasma-assisted molecular beam epitaxy (PAMBE) growth of ultra-thin In{sub 0.17}Al{sub 0.83}N/GaN heterostructures on Si(111) substrate with three different buffer thickness (600 nm, 400 nm, and 200 nm). Growth through critical optimization of growth conditions is followed by the investigation of impact of varying buffer thickness on the formation of ultra-thin 1.5 nm, In{sub 0.17}Al{sub 0.83}N–1.25 nm, GaN–1.5 nm, In{sub 0.17}Al{sub 0.83}N heterostructure, in terms of threading dislocation (TD) density. Analysis reveals a drastic reduction of TD density from the order 10{sup 10 }cm{sup −2} to 10{sup 8 }cm{sup −2} with increasing buffer thickness resulting smooth ultra-thin active region for thick buffer structure.more » Increasing strain with decreasing buffer thickness is studied through reciprocal space mapping analysis. Surface morphology through atomic force microscopy analysis also supports our study by observing an increase of pits and root mean square value (0.89 nm, 1.2 nm, and 1.45 nm) with decreasing buffer thickness which are resulted due to the internal strain and TDs.« less

Selectively Enhanced UV-A Photoresponsivity of a GaN MSM UV Photodetector with a Step-Graded AlxGa1-xN Buffer Layer.

PubMed

Lee, Chang-Ju; Won, Chul-Ho; Lee, Jung-Hee; Hahm, Sung-Ho; Park, Hongsik

2017-07-21

The UV-to-visible rejection ratio is one of the important figure of merits of GaN-based UV photodetectors. For cost-effectiveness and large-scale fabrication of GaN devices, we tried to grow a GaN epitaxial layer on silicon substrate with complicated buffer layers for a stress-release. It is known that the structure of the buffer layers affects the performance of devices fabricated on the GaN epitaxial layers. In this study, we show that the design of a buffer layer structure can make effect on the UV-to-visible rejection ratio of GaN UV photodetectors. The GaN photodetector fabricated on GaN-on-silicon substrate with a step-graded Al x Ga -x N buffer layer has a highly-selective photoresponse at 365-nm wavelength. The UV-to-visible rejection ratio of the GaN UV photodetector with the step-graded Al x Ga 1-x N buffer layer was an order-of-magnitude higher than that of a photodetector with a conventional GaN/AlN multi buffer layer. The maximum photoresponsivity was as high as 5 × 10 - ² A/W. This result implies that the design of buffer layer is important for photoresponse characteristics of GaN UV photodetectors as well as the crystal quality of the GaN epitaxial layers.

Epitaxial growth of metallic buffer layer structure and c-axis oriented Pb(Mn1/3,Nb2/3)O3-Pb(Zr,Ti)O3 thin film on Si for high performance piezoelectric micromachined ultrasonic transducer

NASA Astrophysics Data System (ADS)

Thao, Pham Ngoc; Yoshida, Shinya; Tanaka, Shuji

2017-12-01

This paper reports on the development of a metallic buffer layer structure, (100) SrRuO3 (SRO)/(100) Pt/(100) Ir/(100) yttria-stabilized zirconia (YSZ) layers for the epitaxial growth of a c-axis oriented Pb(Mn1/3,Nb2/3)O3-Pb(Zr,Ti)O3 (PMnN-PZT) thin film on a (100) Si wafer for piezoelectric micro-electro mechanical systems (MEMS) application. The stacking layers were epitaxially grown on a Si substrate under the optimal deposition condition. A crack-free PMnN-PZT epitaxial thin films was obtained at a thickness up to at least 1.7 µm, which is enough for MEMS applications. The unimorph MEMS cantilevers based on the PMnN-PZT thin film were fabricated and characterized. As a result, the PMnN-PZT thin film exhibited -10 to -12 C/m2 as a piezoelectric coefficient e 31,f and ˜250 as a dielectric constants ɛr. The resultant FOM for piezoelectric micromachined ultrasonic transducer (pMUT) is higher than those of general PZT and AlN thin films. This structure has a potential to provide high-performance pMUTs.

TiO2@Pt@CeO2 nanocomposite as a bifunctional catalyst for enhancing photo-reduction of Cr (VI) and photo-oxidation of benzyl alcohol.

PubMed

Li, Shunxing; Cai, Jiabai; Wu, Xueqing; Liu, Biwen; Chen, Qiaoying; Li, Yuehai; Zheng, Fengying

2018-03-15

An solar-light-driven and bifunctional photocatalyst was designed for photo-reduction of Cr(VI) and selective photo-oxidation of benzyl alcohol into benzaldehyde in the presence of water under ambient conditions. Double-shelled and sandwiched TiO 2 @Pt@CeO 2 hollow spheres were prepared by using functionalized polystyrene spheres, sol-gel, hydrothermal reaction, and calcination. The Pt nanoparticles (NPs) were controllably loaded between the TiO 2 shell and CeO 2 shell. Under solar-light irradiation, the photo-reduction rate of Cr(VI) (μmol h -1 ) was in the order of TiO 2 @Pt@CeO 2 (1.901) > TiO 2 @CeO 2 (1.424) > TiO 2 (1.040) > CeO 2 (0.992). Among the above-mentioned photocatalysts, the conversion rate of benzyl alcohol for TiO 2 @Pt@CeO 2 was also the best. These results were attributed to the combination of TiO 2 and CeO 2 as photocatalyst and oxygen buffer, the double-shelled and sandwiched nanostructure, and the addition of Pt NPs as cocatalyst and electron trap site, which could store and shuttle photo-generated electrons, reduce the recombination of the electron-hole, and then enhance photo-generation of active radicals. This conclusion was verified by the electron paramagnetic resonance (EPR) spectroscopy. Considering the versatile combination of photocatalyst, oxygen buffer and cocatalyst, this work could provide new insights into the design of high-performance bifunctional photocatalysts for heavy metal removal and selective synthesis. Copyright © 2017 Elsevier B.V. All rights reserved.

Growing GaN LEDs on amorphous SiC buffer with variable C/Si compositions

PubMed Central

Cheng, Chih-Hsien; Tzou, An-Jye; Chang, Jung-Hung; Chi, Yu-Chieh; Lin, Yung-Hsiang; Shih, Min-Hsiung; Lee, Chao-Kuei; Wu, Chih-I; Kuo, Hao-Chung; Chang, Chun-Yen; Lin, Gong-Ru

2016-01-01

The epitaxy of high-power gallium nitride (GaN) light-emitting diode (LED) on amorphous silicon carbide (a-SixC1−x) buffer is demonstrated. The a-SixC1−x buffers with different nonstoichiometric C/Si composition ratios are synthesized on SiO2/Si substrate by using a low-temperature plasma enhanced chemical vapor deposition. The GaN LEDs on different SixC1−x buffers exhibit different EL and C-V characteristics because of the extended strain induced interfacial defects. The EL power decays when increasing the Si content of SixC1−x buffer. The C-rich SixC1−x favors the GaN epitaxy and enables the strain relaxation to suppress the probability of Auger recombination. When the SixC1−x buffer changes from Si-rich to C-rich condition, the EL peak wavelengh shifts from 446 nm to 450 nm. Moreover, the uniform distribution contour of EL intensity spreads between the anode and the cathode because the traping density of the interfacial defect gradually reduces. In comparison with the GaN LED grown on Si-rich SixC1−x buffer, the device deposited on C-rich SixC1−x buffer shows a lower turn-on voltage, a higher output power, an external quantum efficiency, and an efficiency droop of 2.48 V, 106 mW, 42.3%, and 7%, respectively. PMID:26794268

Methods of producing free-standing semiconductors using sacrificial buffer layers and recyclable substrates

DOEpatents

Ptak, Aaron Joseph; Lin, Yong; Norman, Andrew; Alberi, Kirstin

2015-05-26

A method of producing semiconductor materials and devices that incorporate the semiconductor materials are provided. In particular, a method is provided of producing a semiconductor material, such as a III-V semiconductor, on a spinel substrate using a sacrificial buffer layer, and devices such as photovoltaic cells that incorporate the semiconductor materials. The sacrificial buffer material and semiconductor materials may be deposited using lattice-matching epitaxy or coincident site lattice-matching epitaxy, resulting in a close degree of lattice matching between the substrate material and deposited material for a wide variety of material compositions. The sacrificial buffer layer may be dissolved using an epitaxial liftoff technique in order to separate the semiconductor device from the spinel substrate, and the spinel substrate may be reused in the subsequent fabrication of other semiconductor devices. The low-defect density semiconductor materials produced using this method result in the enhanced performance of the semiconductor devices that incorporate the semiconductor materials.

Strained GaSb/AlAsSb Quantum Wells for p-Channel Field-Effect Transistors

DTIC Science & Technology

2008-01-01

Available online 18 October 2008 PACS: 72.80.Ey 73.61.Ey 81.05.Ea 85.30.Tv Keywords: A3. Molecular beam epitaxy A3. Quantum wells B2. Semiconducting III–V...were grown by molecular beam epitaxy on GaAs substrates. The buffer layer and barrier layers consisted of relaxed AlAsxSb1x. The composition of the...composition in order to control the strain in the GaSb quantum well. The heterostructures studied here are grown by molecular beam epitaxy (MBE) on semi

Ultralow threading dislocation density in GaN epilayer on near-strain-free GaN compliant buffer layer and its applications in hetero-epitaxial LEDs

PubMed Central

Shih, Huan-Yu; Shiojiri, Makoto; Chen, Ching-Hsiang; Yu, Sheng-Fu; Ko, Chung-Ting; Yang, Jer-Ren; Lin, Ray-Ming; Chen, Miin-Jang

2015-01-01

High threading dislocation (TD) density in GaN-based devices is a long unresolved problem because of the large lattice mismatch between GaN and the substrate, which causes a major obstacle for the further improvement of next-generation high-efficiency solid-state lighting and high-power electronics. Here, we report InGaN/GaN LEDs with ultralow TD density and improved efficiency on a sapphire substrate, on which a near strain-free GaN compliant buffer layer was grown by remote plasma atomic layer deposition. This “compliant” buffer layer is capable of relaxing strain due to the absorption of misfit dislocations in a region within ~10 nm from the interface, leading to a high-quality overlying GaN epilayer with an unusual TD density as low as 2.2 × 105 cm−2. In addition, this GaN compliant buffer layer exhibits excellent uniformity up to a 6” wafer, revealing a promising means to realize large-area GaN hetero-epitaxy for efficient LEDs and high-power transistors. PMID:26329829

Phase transition in lead titanate thin films: a Brillouin study

NASA Astrophysics Data System (ADS)

Kuzel, P.; Dugautier, C.; Moch, P.; LeMarrec, F.; Karkut, M. G.

2002-12-01

The elastic properties of both polycrystalline and epitaxial PbTiO3 (PTO) thin films are studied using Brillouin scattering spectroscopy. The epitaxial PTO films were prepared by pulsed laser ablation on (1) a [0 0 1] single crystal of SrTiO3 (STO) doped with Nb and (2) a [0 0 1] STO buffered with a layer of YBa2Cu3O7. The polycrystalline PTO films were prepared by sol-gel on a Si substrate buffered with TiO2 and Pt layers. The data analysis takes into account the ripple and the elasto-optic contributions. The latter significantly affects the measured spectra since it gives rise to a Love mode in the p-s scattering geometry. At room temperature, the spectra of the epitaxially grown samples are interpreted using previously published elastic constants of PTO single crystals. Sol-gel samples exhibit appreciable softening of the effective elastic properties compared to PTO single crystals: this result is explained by taking into account the random orientation of the microscopic PTO grains. For both the polycrystalline and the epitaxial films we have determined that the piezoelectric terms do not contribute to the spectra. The temperature dependence of the spectra shows strong anomalies of the elastic properties near the ferroelectric phase transition. Compared to the bulk, TC is higher in the sol-gel films, while in the epitaxial films the sign of the TC shift depends on the underlying material.

Conductive layer for biaxially oriented semiconductor film growth

DOEpatents

Findikoglu, Alp T.; Matias, Vladimir

2007-10-30

A conductive layer for biaxially oriented semiconductor film growth and a thin film semiconductor structure such as, for example, a photodetector, a photovoltaic cell, or a light emitting diode (LED) that includes a crystallographically oriented semiconducting film disposed on the conductive layer. The thin film semiconductor structure includes: a substrate; a first electrode deposited on the substrate; and a semiconducting layer epitaxially deposited on the first electrode. The first electrode includes a template layer deposited on the substrate and a buffer layer epitaxially deposited on the template layer. The template layer includes a first metal nitride that is electrically conductive and has a rock salt crystal structure, and the buffer layer includes a second metal nitride that is electrically conductive. The semiconducting layer is epitaxially deposited on the buffer layer. A method of making such a thin film semiconductor structure is also described.

Strain Effects in Epitaxial VO2 Thin Films on Columnar Buffer-Layer TiO2/Al2O3 Virtual Substrates.

PubMed

Breckenfeld, Eric; Kim, Heungsoo; Burgess, Katherine; Charipar, Nicholas; Cheng, Shu-Fan; Stroud, Rhonda; Piqué, Alberto

2017-01-18

Epitaxial VO 2 /TiO 2 thin film heterostructures were grown on (100) (m-cut) Al 2 O 3 substrates via pulsed laser deposition. We have demonstrated the ability to reduce the semiconductor-metal transition (SMT) temperature of VO 2 to ∼44 °C while retaining a 4 order of magnitude SMT using the TiO 2 buffer layer. A combination of electrical transport and X-ray diffraction reciprocal space mapping studies help examine the specific strain states of VO 2 /TiO 2 /Al 2 O 3 heterostructures as a function of TiO 2 film growth temperatures. Atomic force microscopy and transmission electron microscopy analyses show that the columnar microstructure present in TiO 2 buffer films is responsible for the partially strained VO 2 film behavior and subsequently favorable transport characteristics with a lower SMT temperature. Such findings are of crucial importance for both the technological implementation of the VO 2 system, where reduction of its SMT temperature is widely sought, as well as the broader complex oxide community, where greater understanding of the evolution of microstructure, strain, and functional properties is a high priority.

Characterization of Cu buffer layers for growth of L10-FeNi thin films

NASA Astrophysics Data System (ADS)

Mizuguchi, M.; Sekiya, S.; Takanashi, K.

2010-05-01

A Cu(001) layer was fabricated on a Au(001) layer to investigate the use of Cu as a buffer layer for growing L10-FeNi thin films. The epitaxial growth of a Cu buffer layer was observed using reflection high-energy electron diffraction. The flatness of the layer improved drastically with an increase in the substrate temperature although the layer was an alloy (AuCu3). An FeNi thin film was epitaxially grown on the AuCu3 buffer layer by alternate monatomic layer deposition and the formation of an L10-FeNi ordered alloy was expected. The AuCu3 buffer layer is thus a promising candidate material for the growth of L10-FeNi thin films.

Irradiation-induced defect formation and damage accumulation in single crystal CeO 2

DOE PAGES

Graham, Joseph T.; Zhang, Yanwen; Weber, William J.

2017-11-15

Here, the accumulation of irradiation-induced disorder in single crystal CeO 2 has been investigated over a wide range of ion fluences. Room temperature irradiations of epitaxial CeO 2 thin films using 2 MeV Au 2+ ions were carried out up to a total fluence of 1.3 x 10 16 cm –2 Post-irradiation disorder was characterized using ion channeling Rutherford backscattering spectrometry (RBS/C) and confocal Raman spectroscopy. The Raman measurements were interpreted by means of a phonon confinement model, which employed rigid ion calculations to determine the phonon correlation length in the irradiated material. Comparison between the dose dependent changes inmore » correlation length of the Raman measurements and the Ce disorder fraction from RBS/C provides complementary quantitative details on the rate of point and extended defect formation on the Ce and O sub-lattices over a broad range of ion fluences. Raman measurements, which are significantly more sensitive than RBS/C at low doses, reveal that the nucleation rate of defects is highest below 0.1 displacements per atom (dpa). Comparison between Raman and RBS/C measurements suggests that between 0.1 and 10 dpa the damage evolution is characterized by modest growth of point defects and/or small clusters, while above 10 dpa the preexisting defects rapidly grow into extended clusters and/or loops.« less

Irradiation-induced defect formation and damage accumulation in single crystal CeO2

NASA Astrophysics Data System (ADS)

Graham, Joseph T.; Zhang, Yanwen; Weber, William J.

2018-01-01

The accumulation of irradiation-induced disorder in single crystal CeO2 has been investigated over a wide range of ion fluences. Room temperature irradiations of epitaxial CeO2 thin films using 2 MeV Au2+ ions were carried out up to a total fluence of 1.3 ×1016 cm-2 Post-irradiation disorder was characterized using ion channeling Rutherford backscattering spectrometry (RBS/C) and confocal Raman spectroscopy. The Raman measurements were interpreted by means of a phonon confinement model, which employed rigid ion calculations to determine the phonon correlation length in the irradiated material. Comparison between the dose dependent changes in correlation length of the Raman measurements and the Ce disorder fraction from RBS/C provides complementary quantitative details on the rate of point and extended defect formation on the Ce and O sub-lattices over a broad range of ion fluences. Raman measurements, which are significantly more sensitive than RBS/C at low doses, reveal that the nucleation rate of defects is highest below 0.1 displacements per atom (dpa). Comparison between Raman and RBS/C measurements suggests that between 0.1 and 10 dpa the damage evolution is characterized by modest growth of point defects and/or small clusters, while above 10 dpa the preexisting defects rapidly grow into extended clusters and/or loops.

Irradiation-induced defect formation and damage accumulation in single crystal CeO 2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Graham, Joseph T.; Zhang, Yanwen; Weber, William J.

Here, the accumulation of irradiation-induced disorder in single crystal CeO 2 has been investigated over a wide range of ion fluences. Room temperature irradiations of epitaxial CeO 2 thin films using 2 MeV Au 2+ ions were carried out up to a total fluence of 1.3 x 10 16 cm –2 Post-irradiation disorder was characterized using ion channeling Rutherford backscattering spectrometry (RBS/C) and confocal Raman spectroscopy. The Raman measurements were interpreted by means of a phonon confinement model, which employed rigid ion calculations to determine the phonon correlation length in the irradiated material. Comparison between the dose dependent changes inmore » correlation length of the Raman measurements and the Ce disorder fraction from RBS/C provides complementary quantitative details on the rate of point and extended defect formation on the Ce and O sub-lattices over a broad range of ion fluences. Raman measurements, which are significantly more sensitive than RBS/C at low doses, reveal that the nucleation rate of defects is highest below 0.1 displacements per atom (dpa). Comparison between Raman and RBS/C measurements suggests that between 0.1 and 10 dpa the damage evolution is characterized by modest growth of point defects and/or small clusters, while above 10 dpa the preexisting defects rapidly grow into extended clusters and/or loops.« less

Interface magnetic anisotropy for monatomic layer-controlled Co/Ni epitaxial multilayers

NASA Astrophysics Data System (ADS)

Shioda, A.; Seki, T.; Shimada, J.; Takanashi, K.

2015-05-01

The magnetic properties for monatomic layer (ML)-controlled Co/Ni epitaxial multilayers were investigated in order to evaluate the interface magnetic anisotropy energy (Ks) between Ni and Co layers. The Co/Ni epitaxial multilayers were prepared on an Al2O3 (11-20) substrate with V/Au buffer layers. The value of Ks was definitely larger than that for the textured Co/Ni grown on a thermally oxidized Si substrate. We consider that the sharp interface for the epitaxial Co/Ni played a role to increase the value of Ks, which also enabled us to obtain perpendicular magnetization even for the 1 ML-Co/1 ML-Ni multilayer.

Crystallographic orientation of epitaxial BaTiO3 films: The role of thermal-expansion mismatch with the substrate

NASA Astrophysics Data System (ADS)

Srikant, V.; Tarsa, E. J.; Clarke, D. R.; Speck, J. S.

1995-02-01

Expitaxial ferroelectric BaTiO3 thin films have been grown on (001) MgO and MgO-buffered (001) GaAs substrates by pulsed laser deposition to explore the effect of substrate lattice parameter. X-ray-diffraction studies showed that the BaTiO3 films on both MgO single-crystal substrates and MgO-buffered (001) GaAs substrates have a cube-on-cube epitaxy; however, for the BaTiO3 films grown on MgO the spacing of the planes parallel to the substrate was close to the c-axis dimension of the unconstrained tetragonal phase, whereas the BaTiO3 films on MgO/GaAs exhibited a spacing closer to the a-axis dimension of the unconstrained tetragonal phase. The cube-on-cube epitaxy was maintained through the heterostructures even when thin epitaxial intermediate buffer layers of SrTiO3 and La(0.5)Sr(0.5)CoO3 were used. The intermediate layers had no effect on the position of the BaTiO3 peak in theta - 2 theta scans. Together, these observations indicate that, for the materials combinations studied, it is the thermal-expansion mismatch between the film and the underlying substrate that determines the crystallographic orientation of the BaTiO3 film. Preliminary measurements indicate that the BaTiO3 films are 'weakly' ferroelectric.

Studies of molecular-beam epitaxy growth of GaAs on porous Si substrates

NASA Technical Reports Server (NTRS)

Mii, Y. J.; Kao, Y. C.; Wu, B. J.; Wang, K. L.; Lin, T. L.; Liu, J. K.

1988-01-01

GaAs has been grown on porous Si directly and on Si buffer layer-porous Si substrates by molecular-beam epitaxy. In the case of GaAs growth on porous Si, transmission electron microscopy (TEM) reveals that the dominant defects in GaAs layers grown on porous Si are microtwins and stacking faults, which originate from the GaAs/porous Si interface. GaAs is found to penetrate into the porous Si layers. By using a thin Si buffer layer (50 nm), GaAs penetration diminishes and the density of microtwins and stacking faults is largely reduced and localized at the GaAs/Si buffer interface. However, there is a high density of threading dislocations remaining. Both Si (100) aligned and four degree tilted substrates have been examined in this study. TEM results show no observable effect of the tilted substrates on the quality of the GaAs epitaxial layer.

Worse than enemies. The CEO's destructive confidant.

PubMed

Sulkowicz, Kerry J

2004-02-01

The CEO is often the most isolated and protected employee in the organization. Few leaders, even veteran CEOs, can do the job without talking to someone about their experiences, which is why most develop a close relationship with a trusted colleague, a confidant to whom they can tell their thoughts and fears. In his work with leaders, the author has found that many CEO-confidant relationships function very well. The confidants keep their leaders' best interests at heart. They derive their gratification vicariously, through the help they provide rather than through any personal gain, and they are usually quite aware that a person in their position can potentially abuse access to the CEO's innermost secrets. Unfortunately, almost as many confidants will end up hurting, undermining, or otherwise exploiting CEOs when the executives are at their most vulnerable. These confidants rarely make the headlines, but behind the scenes they do enormous damage to the CEO and to the organization as a whole. What's more, the leader is often the last one to know when or how the confidant relationship became toxic. The author has identified three types of destructive confidants. The reflector mirrors the CEO, constantly reassuring him that he is the "fairest CEO of them all." The insulator buffers the CEO from the organization, preventing critical information from getting in or out. And the usurper cunningly ingratiates himself with the CEO in a desperate bid for power. This article explores how the CEO-confidant relationship plays out with each type of adviser and suggests ways CEOs can avoid these destructive relationships.

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors.

PubMed

Hardy, Matthew T; Storm, David F; Katzer, D Scott; Downey, Brian P; Nepal, Neeraj; Meyer, David J

2016-11-24

Plasma-assisted molecular beam epitaxy is well suited for the epitaxial growth of III-nitride thin films and heterostructures with smooth, abrupt interfaces required for high-quality high-electron-mobility transistors (HEMTs). A procedure is presented for the growth of N-polar InAlN HEMTs, including wafer preparation and growth of buffer layers, the InAlN barrier layer, AlN and GaN interlayers and the GaN channel. Critical issues at each step of the process are identified, such as avoiding Ga accumulation in the GaN buffer, the role of temperature on InAlN compositional homogeneity, and the use of Ga flux during the AlN interlayer and the interrupt prior to GaN channel growth. Compositionally homogeneous N-polar InAlN thin films are demonstrated with surface root-mean-squared roughness as low as 0.19 nm and InAlN-based HEMT structures are reported having mobility as high as 1,750 cm 2 /V∙sec for devices with a sheet charge density of 1.7 x 10 13 cm -2 .

Process for forming epitaxial perovskite thin film layers using halide precursors

DOEpatents

Clem, Paul G.; Rodriguez, Mark A.; Voigt, James A.; Ashley, Carol S.

2001-01-01

A process for forming an epitaxial perovskite-phase thin film on a substrate. This thin film can act as a buffer layer between a Ni substrate and a YBa.sub.2 Cu.sub.3 O.sub.7-x superconductor layer. The process utilizes alkali or alkaline metal acetates dissolved in halogenated organic acid along with titanium isopropoxide to dip or spin-coat the substrate which is then heated to about 700.degree. C. in an inert gas atmosphere to form the epitaxial film on the substrate. The YBCO superconductor can then be deposited on the layer formed by this invention.

Epitaxial growth of CoO films on semiconductor and metal substrates by constructing a complex heterostructure

NASA Astrophysics Data System (ADS)

Entani, S.; Kiguchi, M.; Saiki, K.; Koma, A.

2003-01-01

Epitaxial growth of CoO films was studied using reflection high-energy electron diffraction (RHEED), electron energy loss spectroscopy (EELS), ultraviolet photoelectron spectroscopy (UPS) and Auger electron spectroscopy (AES). The RHEED results indicated that an epitaxial CoO film grew on semiconductor and metal substrates (CoO (0 0 1)∥GaAs (0 0 1), Cu (0 0 1), Ag (0 0 1) and [1 0 0]CoO∥[1 0 0] substrates) by constructing a complex heterostructure with two alkali halide buffer layers. The AES, EELS and UPS results showed that the grown CoO film had almost the same electronic structure as bulk CoO. We could show that use of alkali halide buffer layers was a good way to grow metal oxide films on semiconductor and metal substrates in an O 2 atmosphere. The alkali halide layers not only works as glue to connect very dissimilar materials but also prevents oxidation of metal and semiconductor substrates.

Theoretical and experimental study of highly textured GaAs on silicon using a graphene buffer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alaskar, Yazeed; Arafin, Shamsul; Lin, Qiyin

2015-09-01

A novel heteroepitaxial growth technique, quasi-van der Waals epitaxy, promises the ability to deposit three-dimensional GaAs materials on silicon using two-dimensional graphene as a buffer layer by overcoming the lattice and thermal expansion mismatch. In this study, density functional theory (DFT) simulations were performed to understand the interactions at the GaAs/graphene hetero-interface as well as the growth orientations of GaAs on graphene. To develop a better understanding of the molecular beam epitaxy-grown GaAs films on graphene, samples were characterized by x-ray diffraction (..theta..-2..theta.. scan, ..omega..-scan, grazing incidence XRD and pole figure measurement) and transmission electron microscopy. The realizations of smoothmore » GaAs films with a strong (111) oriented fiber-texture on graphene/silicon using this deposition technique are a milestone towards an eventual demonstration of the epitaxial growth of GaAs on silicon, which is necessary for integrated photonics application.« less

Epitaxial Growth of beta-Silicon Carbide (SiC) on a Compliant Substrate via Chemical Vapor Deposition (CVD)

NASA Technical Reports Server (NTRS)

Mitchell, Sharanda L.

1996-01-01

Many lattice defects have been attributed to the lattice mismatch and the difference in the thermal coefficient of expansion between SiC and silicon (Si). Stacking faults, twins and antiphase boundaries are some of the lattice defects found in these SiC films. These defects may be a partial cause of the disappointing performance reported for the prototype devices fabricated from beta-SiC films. The objective of this research is to relieve some of the thermal stress due to lattice mismatch when SiC is epitaxially grown on Si. The compliant substrate is a silicon membrane 2-4 microns thick. The CVD process includes the buffer layer which is grown at 1360 C followed by a very thin epitaxial growth of SiC. Then the temperature is raised to 1500 C for the subsequent growth of SiC. Since silicon melts at 1415 C, the SiC will be grown on molten Silicon which is absorbed by a porous graphite susceptor eliminating the SiC/Si interface. We suspect that this buffer layer will yield less stressed material to help in the epitaxial growth of SiC.

The effects of GaN nanocolumn arrays and thin SixNy buffer layers on the morphology of GaN layers grown by plasma-assisted molecular beam epitaxy on Si(111) substrates

NASA Astrophysics Data System (ADS)

Shubina, K. Yu; Pirogov, E. V.; Mizerov, A. M.; Nikitina, E. V.; Bouravleuv, A. D.

2018-03-01

The effects of GaN nanocolumn arrays and a thin SixNy layer, used as buffer layers, on the morphology of GaN epitaxial layers are investigated. Two types of samples with different buffer layers were synthesized by PA-MBE. The morphology of the samples was characterized by SEM. The crystalline quality of the samples was assessed by XRD. The possibility of synthesis of continuous crystalline GaN layers on Si(111) substrates without the addition of other materials such as aluminum nitride was demonstrated.

Molecular beam epitaxy growth of PbSe on Si (211) using a ZnTe buffer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, X. J.; Chang, Y.; Hou, Y. B.

2011-09-15

The authors report the results of successful growth of single crystalline PbSe on Si (211) substrates with ZnTe as a buffer layer by molecular beam epitaxy. Single crystalline PbSe with (511) orientation was achieved on ZnTe/Si (211), as evidenced by RHEED patterns indicative of 2 dimensional (2D) growth, x ray diffraction rocking curves with a full width at half maximum as low as 153 arc sec and mobility as large as 1.1x10{sup 4}cm{sup 2}V{sup -1}s{sup -1} at 77 K. Cross hatch patterns were found on the PbSe(511) surface in Nomarski filtered microscope images suggesting the presence of a surface thermalmore » strain relaxation mechanism, which was confirmed by Fourier transformed high resolution transmission electron microscope images.« less

Proximity Effects of Beryllium-Doped GaN Buffer Layers on the Electronic Properties of Epitaxial AlGaN/GaN Heterostructures

DTIC Science & Technology

2010-05-17

arranged by Prof. A. Zaslavsky Keywords: Gallium nitride High electron mobility transistor Molecular beam epitaxy Homoepitaxy Doping a b s t r a c t AlGaN...GaN/Be:GaN heterostructures have been grown by rf-plasma molecular beam epitaxy on free- standing semi-insulating GaN substrates, employing...hydride vapor phase epitaxy (HVPE) grown GaN sub- strates has enabled the growth by molecular beam epitaxy (MBE) of AlGaN/GaNHEMTswith significantly

In-plane orientation and composition dependences of crystal structure and electrical properties of {100}-oriented Pb(Zr,Ti)O3 films grown on (100) Si substrates by metal organic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Okamoto, Shoji; Sankara Rama Krishnan, P. S.; Okamoto, Satoshi; Yokoyama, Shintaro; Akiyama, Kensuke; Funakubo, Hiroshi

2017-10-01

In-plane orientation-controlled Pb(Zr x ,Ti1- x )O3 (PZT) films with a thickness of approximately 2 µm and a Zr/(Zr + Ti) ratio of 0.39-0.65 were grown on (100) Si substrates by pulsed metal-organic chemical vapor deposition (MOCVD). In-plane-oriented epitaxial PZT films and in-plane random fiber-textured PZT films with {100} out-of-plane orientation were grown on (100)c SrRuO3//(100)c LaNiO3//(100) CeO2//(100) YSZ//(100) Si and (100)c SrRuO3/(100)c LaNiO3/(111) Pt/TiO2/SiO2/(100) Si substrates, respectively. The effects of Zr/(Zr + Ti) ratio and in-plane orientation on the crystal structure, dielectric, ferroelectric, and piezoelectric properties of the films were systematically investigated. The X-ray diffraction measurement showed that the epitaxial PZT films had a higher volume fraction of (100) orientation than the fiber-textured PZT films in the tetragonal Zr/(Zr + Ti) ratio region. A large difference was not detected between the epitaxial films and the fiber-textured films for Zr/(Zr + Ti) ratio dependence of the dielectric constant, and remanent polarization. However, in the rhombohedral phase region [Zr/(Zr + Ti) = 0.65], coercive field was found to be 1.5-fold different between the epitaxial and fiber-textured PZT films. The maximum field-induced strains measured at 0-100 kV/cm by scanning atomic force microscopy were obtained at approximately Zr/(Zr + Ti) = 0.50 and were about 0.5 and 0.3% for the epitaxial and fiber-textured PZT films, respectively.

Pulsed laser deposition of {CeO_2} and {Ce_{1-x}M_xO_2} (M = La, Zr): Application to insulating barrier in cuprate heterostructures

NASA Astrophysics Data System (ADS)

Berger, S.; Contour, J.-P.; Drouet, M.; Durand, O.; Khodan, A.; Michel, D.; Régi, F.-X.

1998-03-01

SrTiO_3 had been often tentatively used as an insulating barrier for HT superconductor/insulator heterostructures. Unfortunately, the deposition of SrTiO_3 on the YBa_2Cu_3O_7 inverse interface results in a poor epitaxial regrowth producing a high roughness dislocated titanate layer. Taking into account the good matching with YBa_2Cu_3O_7 and LaAlO_3, CeO_2 and Ce_{1-x}M_xO_2 (M = La, Zr), epitaxial layers were grown by pulsed laser deposition on LaAlO_3 substrates and introduced into YBa_2Cu_3O_7 based heterostructures as insulating barrier. After adjusting the growth parameters from RHEED oscillations, epitaxial growth is achieved, the oxide crystal axes being rotated by 45^circ from those of the substrate. The surface roughness of 250 nm thick films is very low with a rms value lower than 0.5 nm over 1;μ m^2. The YBa_2Cu_3O_7 layers of a YBa_2Cu_3O_7/CeO_2 /YBa_2Cu_3O_7 heterostructures grown using these optimized parameters show an independent resistive transition, when the thickness is larger than 25 nm, respectively at T_c_1 = 89.6;K and T_c_2 = 91.4;{K}. SrTiO3 est souvent utilisé comme barrière isolante dans des hétérostructures SIS de cuprates supraconducteurs, cependant les défauts générés lors de la croissance de ce titanate sur l'interface inverse de YBa2Cu3O7 conduisent à un matériau dont la qualité cristalline et les propriétés physiques sont médiocres. L'oxyde de cérium CeO2 est également une barrière isolante potentielle intéressante pour ces structures SIS basées sur YBa2Cu3O7 car cet oxyde cubique (a = 0,5411 nm, asqrt{2}/2 = 0,3825 nm) qui est peu désaccordé par rapport au plan ab du cuprate (Δ a/a = - 0,18 %, Δ b/a = 1,6 %) présente de plus un coefficient de dilatation thermique (10,6 × 10^{-6 circ}C^{-1}) très voisin de celui de YBa2Cu3O7 (13 × 10^{-6 circ}C^{-1}). Nous avons donc étudié l'épitaxie de CeO2 et des oxydes de type Ce{1-x}MxO2 (M = La, Zr) en ablation laser pulsée afin de définir des conditions de croissance optimisées pour la réalisation de barrières isolantes ultra-minces à faible rugosité d'interface. L'interface de croissance a été caractérisée par analyse en diffraction d'électrons rapides en incidence rasante (RHEED) en temps réel et par analyse ex-situ en microscopie par force atomique (AFM) et diffraction de rayons X (DRX). Lorsque les paramètres de la croissance (T, p_O_2, fréquence du laser, distance cible-substrat...) sont optimisés par observation des oscillations d'intensité de RHEED, les films sont épitaxiés à 45^{circ} des axes du substrat. La rugosité rms d'un film de 250 nm d'épaisseur déterminée par AFM sur 1 μ m^2 est alors inférieure à 0,5 nm, c'est-à-dire de l'ordre de la hauteur d'une maille élémentaire. Ces conditions optimisées ont été utilisées pour la réalisation d'hétérostructures YBa2Cu3O7/CeO2/YBa2Cu3O7, lorsque l'épaisseur est supérieure à 25 nm, les couches élémentaires de YBa2Cu3O7 présentent des transitions résistive indépendantes respectivement à T_c_1 = 89,6 K et T_c_2 = 91,4 K.

Ferroelectric and piezoelectric responses of (110) and (001)-oriented epitaxial Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} thin films on all-oxide layers buffered silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vu, Hien Thu; Nguyen, Minh Duc, E-mail: minh.nguyen@itims.edu.vn; Inorganic Materials Science

2015-12-15

Graphical abstract: The cross sections show a very dense structure in the (001)-oriented films (c,d), while an open columnar growth structure is observed in the case of the (110)-oriented films (a,b). The (110)-oriented PZT films show a significantly larger longitudinal piezoelectric coefficient (d33{sub ,f}), but smaller transverse piezoelectric coefficient (d31{sub ,f}) than the (001) oriented films. - Highlights: • We fabricate all-oxide, epitaxial piezoelectric PZT thin films on Si. • The orientation of the films can be controlled by changing the buffer layer stack. • The coherence of the in-plane orientation of the grains and grain boundaries affects the ferroelectricmore » properties. • Good cycling stability of the ferroelectric properties of (001)-oriented PZT thin films. The (110)-oriented PZT thin films show a larger d33{sub ,f} but smaller d31{sub ,f} than the (001)-oriented films. - Abstract: Epitaxial ferroelectric Pb(Zr{sub 0.52}Ti{sub 0.48})O{sub 3} (PZT) thin films were fabricated on silicon substrates using pulsed laser deposition. Depending on the buffer layers and perovskite oxide electrodes, epitaxial films with different orientations were grown. (110)-oriented PZT/SrRuO{sub 3} (and PZT/LaNiO{sub 3}) films were obtained on YSZ-buffered Si substrates, while (001)-oriented PZT/SrRuO{sub 3} (and PZT/LaNiO{sub 3}) were fabricated with an extra CeO{sub 2} buffer layer (CeO{sub 2}/YSZ/Si). There is no effect of the electrode material on the properties of the films. The initial remnant polarizations in the (001)-oriented films are higher than those of (110)-oriented films, but it increases to the value of the (001) films upon cycling. The longitudinal piezoelectric d33{sub ,f} coefficients of the (110) films are larger than those of the (001) films, whereas the transverse piezoelectric d31{sub ,f} coefficients in the (110)-films are less than those in the (001)-oriented films. The difference is ascribed to the lower density (connectivity between grains) of the former films.« less

Nanometer-Scale Epitaxial Strain Release in Perovskite Heterostructures Using 'SrAlOx' Sliding Buffer Layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bell, Christopher

2011-08-11

We demonstrate the strain release of LaAlO{sub 3} epitaxial film on SrTiO{sub 3} (001) by inserting ultra-thin 'SrAlO{sub x}' buffer layers. Although SrAlO{sub x} is not a perovskite, nor stable as a single phase in bulk, epitaxy stabilizes the perovskite structure up to a thickness of 2 unit cells (uc). At a critical thickness of 3 uc of SrAlO{sub x}, the interlayer acts as a sliding buffer layer, and abruptly relieves the lattice mismatch between the LaAlO{sub 3} filmand the SrTiO{sub 3} substrate, while maintaining crystallinity. This technique may provide a general approach for strain relaxation of perovskite film farmore » below the thermodynamic critical thickness. A central issue in heteroepitaxial filmgrowth is the inevitable difference in lattice constants between the filmand substrate. Due to this lattice mismatch, thin film are subjected to microstructural strain, which can have a significan effect on the filmproperties. This challenge is especially prominent in the rapidly developing fiel of oxide electronics, where much interest is focused on incorporating the emergent physical properties of oxides in devices. Although strain can be used to great effect to engineer unusual ground states, it is often deleterious for bulk first-orde phase transitions, which are suppressed by the strain and symmetry constraints of the substrate. While there are some reports discussing the control of the lattice mismatch in oxides using thick buffer layers, the materials choice, lattice-tunable range, and control of misfit dislocations are still limited. In this Letter, we report the fabrication of strain-relaxed LaAlO{sub 3} (LAO) thin film on SrTiO{sub 3} (STO) (001) using very thin 'SrAlO{sub x}' (SAO) buffer layers. Whereas for 1 or 2 pseudo-perovskite unit cells (uc) of SAO, the subsequent LAO filmis strained to the substrate, at a critical thickness of 3 uc the SAO interlayer abruptly relieves the lattice mismatch between the LAO and the STO, although maintaining the relative crystalline orientation between the filmand the substrate. For 4 uc or greater, the perovskite epitaxial template is lost and the LAO filmis amorphous. These results suggest that metastable interlayers can be used for strain release on the nanometer scale.« less

Growth and Characterization of (211)B Cadmium Telluride Buffer Layer Grown by Metal-organic Vapor Phase Epitaxy on Nanopatterned Silicon for Mercury Cadmium Telluride Based Infrared Detector Applications

NASA Astrophysics Data System (ADS)

Shintri, Shashidhar S.

Mercury cadmium telluride (MCT or Hg1-xCdxTe) grown by molecular beam epitaxy (MBE) is presently the material of choice for fabricating infrared (IR) detectors used in night vision based military applications. The focus of MCT epitaxy has gradually shifted since the last decade to using Si as the starting substrate since it offers several advantages. But the ˜19 % lattice mismatch between MCT and Si generates lots of crystal defects some of which degrade the performance of MCT devices. Hence thick CdTe films are used as buffer layers on Si to accommodate the defects. However, growth of high quality single crystal CdTe on Si is challenging and to date, the best MBE CdTe/Si reportedly has defects in the mid-105 cm -2 range. There is a critical need to reduce the defect levels by at least another order of magnitude, which is the main motivation behind the present work. The use of alternate growth technique called metal-organic vapor phase epitaxy (MOVPE) offers some advantages over MBE and in this work MOVPE has been employed to grow the various epitaxial films. In the first part of this work, conditions for obtaining high quality (211)B CdTe epitaxy on (211)Si were achieved, which also involved studying the effect of having additional intermediate buffer layers such as Ge and ZnTe and incorporation of in-situ thermal cyclic annealing (TCA) to reduce the dislocation density. A critical problem of Si cross-contamination due to 'memory effect' of different reactant species was minimized by introducing tertiarybutylArsine (TBAs) which resulted in As-passivation of (211)Si. The best 8-10 µm thick CdTe films on blanket (non-patterned) Si had dislocations around 3×105 cm-2, which are the best reported by MOVPE till date and comparable to the highest quality films available by MBE. In the second part of the work, nanopatterned (211)Si was used to study the effect of patterning on the crystal quality of epitaxial CdTe. In one such study, patterning of ˜20 nm holes in SiO2/Ge/(211)Si was achieved by block co-polymer (BCP) lithography. Conditions for selective CdTe epitaxy was achieved and results showed different defect propagation mechanism at the patterned interface compared to the films grown on blanket Si. In another study, patterning of ˜360 nm holes in SiO2/(211)Si was done by molecular transfer lithography (MxL). Conditions for selective Ge and CdTe epitaxy were achieved which was the most challenging part of this work. Thin CdTe films were characterized to check the effect of nanopatterning. Certain results invariably showed that CdTe grown on nanopatterned substrates demonstrated promise of defect reduction and blocking close to the growth interface. But presently, nanopatterning also offers some serious challenges such as uniformity of patterns and substrate cleaning prior to growth for successful implementation of epitaxy on very large areas. Such factors resulted in degradation of overall crystal quality and will be discussed in this work. This is the first successful demonstration of selective (211)B CdTe epitaxy on Si by MOVPE using some of the relatively novel and promising nanopatterning techniques.

BaFe2As2/Fe Bilayers with [001]-tilt Grain Boundary on MgO and SrTiO3 Bicrystal Substrates

NASA Astrophysics Data System (ADS)

Iida, K.; Haindl, S.; Kurth, F.; Hänisch, J.; Schulz, L.; Holzapfel, B.

Co-doped BaFe2As2 (Ba-122) can be realized on both MgO and SrTiO3 bicrystal substrates with [001]-tilt grain boundary by employing Fe buffer layers. However, an additional spinel (i.e. MgAl2O4) buffer between Fe and SrTiO3 is necessary since an epitaxial, smooth surface of Fe layer can not be grown on bare SrTiO3. Both types of bicrystal films show good crystalline quality.

Optical properties of epitaxial BiFeO3 thin film grown on SrRuO3-buffered SrTiO3 substrate.

PubMed

Xu, Ji-Ping; Zhang, Rong-Jun; Chen, Zhi-Hui; Wang, Zi-Yi; Zhang, Fan; Yu, Xiang; Jiang, An-Quan; Zheng, Yu-Xiang; Wang, Song-You; Chen, Liang-Yao

2014-01-01

The BiFeO3 (BFO) thin film was deposited by pulsed-laser deposition on SrRuO3 (SRO)-buffered (111) SrTiO3 (STO) substrate. X-ray diffraction pattern reveals a well-grown epitaxial BFO thin film. Atomic force microscopy study indicates that the BFO film is rather dense with a smooth surface. The ellipsometric spectra of the STO substrate, the SRO buffer layer, and the BFO thin film were measured, respectively, in the photon energy range 1.55 to 5.40 eV. Following the dielectric functions of STO and SRO, the ones of BFO described by the Lorentz model are received by fitting the spectra data to a five-medium optical model consisting of a semi-infinite STO substrate/SRO layer/BFO film/surface roughness/air ambient structure. The thickness and the optical constants of the BFO film are obtained. Then a direct bandgap is calculated at 2.68 eV, which is believed to be influenced by near-bandgap transitions. Compared to BFO films on other substrates, the dependence of the bandgap for the BFO thin film on in-plane compressive strain from epitaxial structure is received. Moreover, the bandgap and the transition revealed by the Lorentz model also provide a ground for the assessment of the bandgap for BFO single crystals.

Electronic Materials and Applications 2014 (Abstracts)

DTIC Science & Technology

2015-04-02

the thermal image using IR camera and surface tempera- ture using thermo couple. Lastly, we conducted a surface coating to change the surface...progress in the superconducting films and coated conductors of iron chalcogenides. With a CeO2 buffer , critical current densities (Jc) over 7 MA/cm2...Roosen, University of Erlangen-Nuremberg, Germany Kato, N. 23-Jan 11:15AM Pacific 11:30 AM (EMA-S1-021-2014) Glass-like Thermal Conductivity of (010

Current isolating epitaxial buffer layers for high voltage photodiode array

DOEpatents

Morse, Jeffrey D.; Cooper, Gregory A.

2002-01-01

An array of photodiodes in series on a common semi-insulating substrate has a non-conductive buffer layer between the photodiodes and the semi-insulating substrate. The buffer layer reduces current injection leakage between the photodiodes of the array and allows optical energy to be converted to high voltage electrical energy.

Coincident site lattice-matched growth of semiconductors on substrates using compliant buffer layers

DOEpatents

Norman, Andrew

2016-08-23

A method of producing semiconductor materials and devices that incorporate the semiconductor materials are provided. In particular, a method is provided of producing a semiconductor material, such as a III-V semiconductor, on a silicon substrate using a compliant buffer layer, and devices such as photovoltaic cells that incorporate the semiconductor materials. The compliant buffer material and semiconductor materials may be deposited using coincident site lattice-matching epitaxy, resulting in a close degree of lattice matching between the substrate material and deposited material for a wide variety of material compositions. The coincident site lattice matching epitaxial process, as well as the use of a ductile buffer material, reduce the internal stresses and associated crystal defects within the deposited semiconductor materials fabricated using the disclosed method. As a result, the semiconductor devices provided herein possess enhanced performance characteristics due to a relatively low density of crystal defects.

Buffer Layer Doping Concentration Measurement Using VT-VSUB Characteristics of GaN HEMT with p-GaN Substrate Layer

NASA Astrophysics Data System (ADS)

Hu, Cheng-Yu; Nakatani, Katsutoshi; Kawai, Hiroji; Ao, Jin-Ping; Ohno, Yasuo

To improve the high voltage performance of AlGaN/GaN heterojunction field effect transistors (HFETs), we have fabricated AlGaN/GaN HFETs with p-GaN epi-layer on sapphire substrate with an ohmic contact to the p-GaN (p-sub HFET). Substrate bias dependent threshold voltage variation (VT-VSUB) was used to directly determine the doping concentration profile in the buffer layer. This VT-VSUB method was developed from Si MOSFET. For HFETs, the insulator is formed by epitaxially grown and heterogeneous semiconductor layer while for Si MOSFETs the insulator is amorphous SiO2. Except that HFETs have higher channel mobility due to the epitaxial insulator/semiconductor interface, HFETs and Si MOSFETs are basically the same in the respect of device physics. Based on these considerations, the feasibility of this VT-VSUB method for AlGaN/GaN HFETs was discussed. In the end, the buffer layer doping concentration was measured to be 2 × 1017cm-3, p-type, which is well consistent with the Mg concentration obtained from secondary ion mass spectroscopy (SIMS) measurement.

Diamagnetic to ferromagnetic switching in VO2 epitaxial thin films by nanosecond excimer laser treatment

NASA Astrophysics Data System (ADS)

Molaei, R.; Bayati, R.; Nori, S.; Kumar, D.; Prater, J. T.; Narayan, J.

2013-12-01

VO2(010)/NiO(111) epitaxial heterostructures were integrated with Si(100) substrates using a cubic yttria-stabilized zirconia (c-YSZ) buffer. The epitaxial alignment across the interfaces was determined to be VO2(010)‖NiO(111)‖c-YSZ(001)‖Si(001) and VO2[100]‖NiO⟨110⟩‖c-YSZ⟨100⟩‖Si⟨100⟩. The samples were subsequently treated by a single shot of a nanosecond KrF excimer laser. Pristine as-deposited film showed diamagnetic behavior, while laser annealed sample exhibited ferromagnetic behavior. The population of majority charge carriers (e-) and electrical conductivity increased by about two orders of magnitude following laser annealing. These observations are attributed to the introduction of oxygen vacancies into the VO2 thin films and the formation of V3+ defects.

Sulfide and Oxide Heterostructures For the SrTiO3 Thin Film Growth on Si and Their Structural and Interfacial Stabilities

NASA Astrophysics Data System (ADS)

Yoo, Young‑Zo; Song, Jeong‑Hwan; Konishi, Yoshinori; Kawasaki, Masashi; Koinuma, Hideomi; Chikyow, Toyohiro

2006-03-01

Epitaxial SrTiO3 (STO) thin films with high electrical properties were grown on Si using ZnS single- and SrS/MnS hetero-buffer layers. STO films on both ZnS-buffered and SrS/MnS-buffered Si showed two growth orientations, (100) and (110). The temperature dependence of the growth orientation for STO films was different for the ZnS single-buffer layer in comparison with the SrS/MnS heterobuffer layers. (100) growth of STO films on SrS/MnS-buffered Si became dominant at high temperatures about 700 °C, while (100) growth of STO films on ZnS-buffered Si became dominant at a relatively low growth temperature of 550 °C. STO(100) films on ZnS-buffered and SrS/MnS-buffered Si showed lattice and domain matches for epitaxial relationships with [001]ZnS\\parallel[011]STO and SrS[001]\\parallel[011]STO, respectively via 45° in-plane rotation of STO films relative to both ZnS and SrS layers. The ZnS buffer layer contained many stacking faults because of the mismatch between ZnS and Si, however, those defects were terminated at the ZnS/STO interface. In contrast, the MnS buffer was very stable against stacking defect formation. Transmission electron microscopy measurements revealed the presence of a disordered region at the ZnS/Si and MnS/Si interfaces. Auger electron spectroscopy and transmission electron microscopy results showed that a good MnS/Si interface at the initial growth stage degraded to a SiS2-x-rich phase during MnS deposition and again into a SiO2-x-rich phase during STO deposition at the high growth temperature of 700 °C. It was also observed that STO on SrS/MnS-buffered Si showed a markedly high dielectric constant compared with that of STO on ZnS-buffered Si.

Self-organization of dislocation-free, high-density, vertically aligned GaN nanocolumns involving InGaN quantum wells on graphene/SiO2 covered with a thin AlN buffer layer.

PubMed

Hayashi, Hiroaki; Konno, Yuta; Kishino, Katsumi

2016-02-05

We demonstrated the self-organization of high-density GaN nanocolumns on multilayer graphene (MLG)/SiO2 covered with a thin AlN buffer layer by RF-plasma-assisted molecular beam epitaxy. MLG/SiO2 substrates were prepared by the transfer of CVD graphene onto thermally oxidized SiO2/Si [100] substrates. Employing the MLG with an AlN buffer layer enabled the self-organization of high-density and vertically aligned nanocolumns. Transmission electron microscopy observation revealed that no threading dislocations, stacking faults, or twinning defects were included in the self-organized nanocolumns. The photoluminescence (PL) peak intensities of the self-organized GaN nanocolumns were 2.0-2.6 times higher than those of a GaN substrate grown by hydride vapor phase epitaxy. Moreover, no yellow luminescence or ZB-phase GaN emission was observed from the nanocolumns. An InGaN/GaN MQW and p-type GaN were integrated into GaN nanocolumns grown on MLG, displaying a single-peak PL emission at a wavelength of 533 nm. Thus, high-density nitride p-i-n nanocolumns were fabricated on SiO2/Si using the transferred MLG interlayer, indicating the possibility of developing visible nanocolumn LEDs on graphene/SiO2.

Fabrication and characterization of {110}-oriented Pb(Zr,Ti)O3 thin films on Pt/SiO2/Si substrates using PdO//Pd buffer layer

NASA Astrophysics Data System (ADS)

Oshima, Naoya; Uchiyama, Kiyoshi; Ehara, Yoshitaka; Oikawa, Takahiro; Ichinose, Daichi; Tanaka, Hiroki; Sato, Tomoya; Uchida, Hiroshi; Funakubo, Hiroshi

2017-10-01

A strongly {110}-oriented perovskite-type thin film of tetragonal Pb(Zr0.4Ti0.6)O3 (PZT) was successfully obtained on a (100)Si substrate using a {101}PdO//{111}Pd thin film as a buffer layer. The {101}PdO//{111}Pd thin film buffer layer was obtained by oxidizing {111}Pd after depositing {111}Pd on a {111}Pt/TiO x /SiO2/{100}Si substrate. Using this buffer layer, a {110} c -oriented SrRuO3 (SRO) thin film was deposited by sputtering as a bottom electrode of PZT thin films. Subsequently, the {110}-oriented PZT thin film can be deposited on a (110) c SRO thin film by metal-organic chemical deposition (MOCVD) and its properties can be compared with those of PZT thin films with other orientations of {100} and {111}. Among the {100}, {110}, {111}-oriented PZT films, the {100}-oriented one showed the largest remnant polarization, which is in good agreement with those of the PZTs epitaxially grown in the 〈100〉, 〈110〉, and 〈111〉 directions. The other properties, i.e., piezoelectricity and dielectric constants, also showed similar anisotropic tendencies, which is in good agreement with the data reported in the epitaxially grown PZTs.

Facile synthesis of heterostructured cerium oxide/yttrium oxide nanocomposite in UV light induced photocatalytic degradation and catalytic reduction: Synergistic effect of antimicrobial studies.

PubMed

Maria Magdalane, C; Kaviyarasu, K; Judith Vijaya, J; Siddhardha, B; Jeyaraj, B

2017-08-01

Ceria (CeO 2 ) is an exciting alternative noble metal catalyst, because it has ability to release and absorb oxygen in the redox system, and function as an oxygen buffer. In this study, heterostructured catalysts consisting of CeO 2 /Y 2 O 3 nanocomposites were successfully synthesized by hydrothermal method in the presence of sodium hydroxide as a reducing agent from cerium nitrate and yttrium nitrate as a precursor which was then evaluated for its photocatalytic activity in the degradation of Rhodamine B (RhB) synthetic dye. Scanning electron microscopy (SEM) imparts the surface morphology and size of the prepared sample. Elemental compositions and the purity of the nanoparticles are proved by energy dispersive X-ray Spectroscopy (EDX). CeO 2 /Y 2 O 3 nanoparticles were made up of CeO and YO bonds which are confirmed by Fourier transform infrared spectroscopy (FTIR). Synthesis temperature and pressure, during hydrothermal reactions, plays a critical role in controlling the shape, size, oxygen vacancy concentration, and low temperature reducibility in CeO 2 based nanocomposites. The lattice constants and oxygen vacancy concentrations of ceria nanoparticles also depend upon the concentration of hydroxide ion which leads to better morphology at low temperature and pressure. Hydrogenation of p-nitrophenol to p-aminophenol with a reducing agent is conveniently carried out in aqueous medium by using this binary metal oxide catalyst. Further, the photocatalytic performance of the synthesized nanoparticles was monitored by photocatalytic degradation of Rhodamine B synthetic dye under UV light irradiation. To get maximum photocatalytic degradation (PCD) efficiency, we have used H 2 O 2 for the generation of excess reactive oxygen species (ROS). In addition, the antibacterial activity of nanoparticles against bacteria was also examined. The observed antibacterial activity results are comparable with the results obtained using the standard antibiotic. Copyright © 2017 Elsevier B.V. All rights reserved.

Epitaxial thin films

DOEpatents

Hunt, Andrew Tye; Deshpande, Girish; Lin, Wen-Yi; Jan, Tzyy-Jiuan

2006-04-25

Epitatial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal gain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.

Laterally Overgrown Structures as Substrates for Lattice Mismatched Epitaxy

DTIC Science & Technology

2002-06-03

low supersaturation substrate [3]. Therefore, equilibrium growth techniques as liquid buffer with TD phase epitaxy (LPE) or vapour phase epitaxy (VPE...phase diffusion during MBE growth, so lateral over- low cost semiconductor devices. Therefore, vapour growth must rely on the surface mobility of...is replaced by graphite film not wetted For the GaAs on GaAs ELO system we attributed by the gallium melt [35]. Similarly, tungsten has been broadening

Non-polar a-plane ZnO films grown on r-Al2O3 substrates using GaN buffer layers

NASA Astrophysics Data System (ADS)

Xu, C. X.; Chen, W.; Pan, X. H.; Chen, S. S.; Ye, Z. Z.; Huang, J. Y.

2016-09-01

In this work, GaN buffer layer has been used to grow non-polar a-plane ZnO films by laser-assisted and plasma-assisted molecular beam epitaxy. The thickness of GaN buffer layer ranges from ∼3 to 12 nm. The GaN buffer thickness effect on the properties of a-plane ZnO thin films is carefully investigated. The results show that the surface morphology, crystal quality and optical properties of a-plane ZnO films are strongly correlated with the thickness of GaN buffer layer. It was found that with 6 nm GaN buffer layer, a-plane ZnO films display the best crystal quality with X-ray diffraction rocking curve full-width at half-maximum of only 161 arcsec for the (101) reflection.

Aligned crystalline semiconducting film on a glass substrate and method of making

DOEpatents

Findikoglu, Alp T.

2010-08-24

A semiconducting structure having a glass substrate. In one embodiment, the glass substrate has a softening temperature of at least about 750.degree. C. The structure includes a nucleation layer formed on a surface of the substrate, a template layer deposited on the nucleation layer by one of ion assisted beam deposition and reactive ion beam deposition, at least on biaxially oriented buffer layer epitaxially deposited on the template layer, and a biaxially oriented semiconducting layer epitaxially deposited on the buffer layer. A method of making the semiconducting structure is also described.

Epitaxial growth and photoluminescence of hexagonal CdS 1- xSe x alloy films

NASA Astrophysics Data System (ADS)

Grün, M.; Gerlach, H.; Breitkopf, Th.; Hetterich, M.; Reznitsky, A.; Kalt, H.; Klingshirn, C.

1995-01-01

CdSSe ternary alloy films were grown on GaAs(111) by hot-wall beam epitaxy. The hexagonal crystal phase is obtained. The composition varies from 0 to 40% selenium. Luminescence spectroscopy at low temperatures shows a dominant effect by alloy disorder. Localization of carriers, for example, is still observed at a pulsed optical excitation density of 6 mJ/cm 2. The overall quality of the CdSSe films is sufficient to use them as buffer layers for the growth of hexagonal superlattices.

Growth of ZnO(0001) on GaN(0001)/4H-SiC buffer layers by plasma-assisted hybrid molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Adolph, David; Tingberg, Tobias; Ive, Tommy

2015-09-01

Plasma-assisted molecular beam epitaxy was used to grow ZnO(0001) layers on GaN(0001)/4H-SiC buffer layers deposited in the same growth chamber equipped with both N- and O-plasma sources. The GaN buffer layers were grown immediately before initiating the growth of ZnO. Using a substrate temperature of 445 °C and an O2 flow rate of 2.5 standard cubic centimeters per minute, we obtained ZnO layers with statistically smooth surfaces having a root-mean-square roughness of 0.3 nm and a peak-to-valley distance of 3 nm as revealed by atomic force microscopy. The full-width-at-half-maximum for x-ray rocking curves obtained across the ZnO(0002) and ZnO(10 1 bar 5) reflections was 198 and 948 arcsec, respectively. These values indicated that the mosaicity of the ZnO layer was comparable to the corresponding values of the underlying GaN buffer layer. Reciprocal space maps showed that the in-plane relaxation of the GaN and ZnO layers was 82% and 73%, respectively, and that the relaxation occurred abruptly during the growth. Room-temperature Hall-effect measurements revealed that the layers were inherently n-type and had an electron concentration of 1×1019 cm-3 and a Hall mobility of 51 cm2/V s.

The effect of temperature cycling typical of low earth orbit satellites on thin films of YBa2Cu3O(7-x)

NASA Technical Reports Server (NTRS)

Mogro-Campero, A.; Turner, L. G.; Bogorad, A.; Herschitz, R.

1991-01-01

Thin films of YBa2Cu3O(7-x) (YBCO) were temperature cycled to simulate conditions of a low earth orbit satellite. In one series of tests, epitaxial and polycrystalline YBCO films were cycled between temperatures of +/- 80 C in vacuum and in nitrogen for hundreds of cycles. The room temperature resistance of an epitaxial YBCO film increased by about 10 percent, but the superconducting transition temperature was unchanged. The largest changes were for a polycrystalline YBCO film on oxidized silicon with a zirconia buffer layer, for which the transition temperature decreased by 3 K. An extended test was carried out for epitaxial films. After 3200 cycles (corresponding to about 230 days in space), transition temperatures and critical current densities remained unchanged.

Architecture for coated conductors

DOEpatents

Foltyn, Stephen R.; Arendt, Paul N.; Wang, Haiyan; Stan, Liliana

2010-06-01

Articles are provided including a base substrate having a layer of an oriented cubic oxide material with a rock-salt-like structure layer thereon, and, a layer of epitaxial titanium nitride upon the layer of an oriented cubic oxide material having a rock-salt-like structure. Such articles can further include thin films of high temperature superconductive oxides such as YBCO upon the layer of epitaxial titanium nitride or upon a intermediate buffer layer upon the layer of epitaxial titanium nitride.

Structural, optical and magnetic investigation of Gd implanted CeO2 nanocrystals

NASA Astrophysics Data System (ADS)

Kaviyarasu, K.; Murmu, P. P.; Kennedy, J.; Thema, F. T.; Letsholathebe, Douglas; Kotsedi, L.; Maaza, M.

2017-10-01

Gadolinium implanted cerium oxide (Gd-CeO2) nanocomposites is an important candidate which have unique hexagonal structure and high K- dielectric constant. Gd-CeO2 nanoparticles were synthesized using hydrothermal method. X-ray diffraction (XRD) results showed that the peaks are consistent with pure phase cubic structure the XRD pattern also confirmed crystallinity and phase purity of the sample. Nanocrystals sizes were found to be up to 25 nm as revealed by XRD and SEM. It is suggested that Gd gives an affirmative effect on the ion influence behavior of Gd-CeO2. XRD patterns showed formation of new phases and SEM micrographs revealed hexagonal structure. Photoluminescence measurement (PL) reveals the systematic shift of the emission band towards lower wavelength thereby ascertaining the quantum confinement effect (QCE). The PL spectrum has wider broad peak ranging from 390 nm to 770 nm and a sharp one centered on at 451.30 nm which is in tune with Gd ions. In the Raman spectra showed intense band observed between 460 cm-1 and 470 cm-1 which is attributed to oxygen ions into CeO2. Room temperature ferromagnetism was observed in un-doped and Gd implanted and annealed CeO2 nanocrystals. In the recent studies, ceria based materials have been considered as one of the most promising electrolytes for reduced temperature SOFC (solid oxide fuel cell) system due to their high ionic conductivities allowing its use in stainless steel supported fuel cells. CeO2 having an optical bandgap 3.3 eV and n-type carrier density which make it a promising candidate for various technological application such as buffer layer on silicon on insulator devices.

Interface engineering in epitaxial growth of layered oxides via a conducting layer insertion

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yun, Yu; Meng, Dechao; Wang, Jianlin

2015-07-06

There is a long-standing challenge in the fabrication of layered oxide epitaxial films due to their thermodynamic phase-instability and the large stacking layer number. Recently, the demand for high-quality thin films is strongly pushed by their promising room-temperature multiferroic properties. Here, we find that by inserting a conducting and lattice matched LaNiO{sub 3} buffer layer, high quality m = 5 Bi{sub 6}FeCoTi{sub 3}O{sub 18} epitaxial films can be fabricated using the laser molecular beam epitaxy, in which the atomic-scale sharp interface between the film and the metallic buffer layer explains the enhanced quality. The magnetic and ferroelectric properties of the high qualitymore » Bi{sub 6}FeCoTi{sub 3}O{sub 18} films are studied. This study demonstrates that insertion of the conducting layer is a powerful method in achieving high quality layered oxide thin films, which opens the door to further understand the underline physics and to develop new devices.« less

Plasma-assisted molecular beam epitaxy of ZnO on in-situ grown GaN/4H-SiC buffer layers

NASA Astrophysics Data System (ADS)

Adolph, David; Tingberg, Tobias; Andersson, Thorvald; Ive, Tommy

2015-04-01

Plasma-assisted molecular beam epitaxy (MBE) was used to grow ZnO (0001) layers on GaN(0001)/4H-SiC buffer layers deposited in the same growth chamber equipped with both N- and O-plasma sources. The GaN buffer layers were grown immediately before initiating the growth of ZnO. Using a substrate temperature of 440°C-445°C and an O2 flow rate of 2.0-2.5 sccm, we obtained ZnO layers with smooth surfaces having a root-mean-square roughness of 0.3 nm and a peak-to-valley distance of 3 nm shown by AFM. The FWHM for X-ray rocking curves recorded across the ZnO(0002) and ZnO(10bar 15) reflections were 200 and 950 arcsec, respectively. These values showed that the mosaicity (tilt and twist) of the ZnO film was comparable to corresponding values of the underlying GaN buffer. It was found that a substrate temperature > 450°C and a high Zn-flux always resulted in a rough ZnO surface morphology. Reciprocal space maps showed that the in-plane relaxation of the GaN and ZnO layers was 82.3% and 73.0%, respectively and the relaxation occurred abruptly during the growth. Room-temperature Hall-effect measurements showed that the layers were intrinsically n-type with an electron concentration of 1019 cm-3 and a Hall mobility of 50 cm2·V-1·s-1.

Properties of unrelaxed InAs{sub 1-X}Sb{sub X} alloys grown on compositionally graded buffers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Belenky, G.; Donetsky, D.; Kipshidze, G.

Unrelaxed InAs{sub 1-x}Sb{sub x} layers with lattice constants up to 2.1% larger than that of GaSb substrates were grown by molecular beam epitaxy on GaInSb and AlGaInSb compositionally graded buffer layers. The topmost section of the buffers was unrelaxed but strained. The in-plane lattice constant of the top buffer layer was grown to be equal to the lattice constant of unrelaxed and unstrained InAs{sub 1-x}Sb{sub x} with given X. The InAs{sub 0.56}Sb{sub 0.44} layers demonstrate photoluminescence peak at 9.4 {mu}m at 150 K. The minority carrier lifetime measured at 77 K for InAs{sub 0.8}Sb{sub 0.2} was {tau} = 250 ns.

Tuning the Two-Dimensional Electron Liquid at Oxide Interfaces by Buffer-Layer-Engineered Redox Reactions.

PubMed

Chen, Yunzhong; Green, Robert J; Sutarto, Ronny; He, Feizhou; Linderoth, Søren; Sawatzky, George A; Pryds, Nini

2017-11-08

Polar discontinuities and redox reactions provide alternative paths to create two-dimensional electron liquids (2DELs) at oxide interfaces. Herein, we report high mobility 2DELs at interfaces involving SrTiO 3 (STO) achieved using polar La 7/8 Sr 1/8 MnO 3 (LSMO) buffer layers to manipulate both polarities and redox reactions from disordered overlayers grown at room temperature. Using resonant X-ray reflectometry experiments, we quantify redox reactions from oxide overlayers on STO as well as polarity induced electronic reconstruction at epitaxial LSMO/STO interfaces. The analysis reveals how these effects can be combined in a STO/LSMO/disordered film trilayer system to yield high mobility modulation doped 2DELs, where the buffer layer undergoes a partial transformation from perovskite to brownmillerite structure. This uncovered interplay between polar discontinuities and redox reactions via buffer layers provides a new approach for the design of functional oxide interfaces.

Ion sensitivity of large-area epitaxial graphene film on SiC substrate

NASA Astrophysics Data System (ADS)

Mitsuno, Takanori; Taniguchi, Yoshiaki; Ohno, Yasuhide; Nagase, Masao

2017-11-01

We investigated the intrinsic ion sensitivity of graphene field-effect transistors (FETs) fabricated by a resist-free stencil mask lithography process from a large-scale graphene film epitaxially grown on a SiC substrate. A pH-adjusted phosphate-buffered solution was used for the measurement to eliminate the interference of other ions on the graphene FET's ion sensitivity. The charge neutrality point shifted negligibly with changing pH for the pH-adjusted phosphate-buffered solution, whereas for the mixed buffer solution, it shifted toward the negative gate voltage owing to the decrease in the concentration of phthalate ions. This phenomenon is contrary to that observed in previous reports. Overall, our results indicate that the graphene film is intrinsically insensitive to ions except for those with functional groups that interact with the graphene surface.

Buffer-eliminated, charge-neutral epitaxial graphene on oxidized 4H-SiC (0001) surface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sirikumara, Hansika I., E-mail: hansi.sirikumara@siu.edu; Jayasekera, Thushari, E-mail: thushari@siu.edu

Buffer-eliminated, charge-neutral epitaxial graphene (EG) is important to enhance its potential in device applications. Using the first principles Density Functional Theory calculations, we investigated the effect of oxidation on the electronic and structural properties of EG on 4H-SiC (0001) surface. Our investigation reveals that the buffer layer decouples from the substrate in the presence of both silicate and silicon oxy-nitride at the interface, and the resultant monolayer EG is charge-neutral in both cases. The interface at 4H-SiC/silicate/EG is characterized by surface dangling electrons, which opens up another route for further engineering EG on 4H-SiC. Dangling electron-free 4H-SiC/silicon oxy-nitride/EG is idealmore » for achieving charge-neutral EG.« less

Manufacturable Tri-Stack AlSb/InAs HEMT Low-Noise Amplifiers Using Wafer-Level-Packaging Technology for Light-Weight and Ultralow-Power Applications

DTIC Science & Technology

2009-05-01

shown in Fig. 1 was grown by molecular - beam epitaxy (MBE) on 3-inch semi-insulating GaAs substrates. AlGaSb was used as a buffer. AlSb was used as... beam epitaxy for low-power applications,” J. Vac. Sci. Technol. B. 24, pp. 2581-2585, 2006. [12] Y. C. Chou, L. J. Lee, J. M. Yang, M. D. Lange, P...passivation AlGaSb buffer Figure 1: Cross section of an AlSb/InAs HEMT device on a 3-inch GaAs substrate. The interface region between the

Nitridation- and Buffer-Layer-Free Growth of [1100]-Oriented GaN Domains on m-Plane Sapphire Substrates by Using Hydride Vapor Phase Epitaxy

NASA Astrophysics Data System (ADS)

Seo, Yeonwoo; Lee, Sanghwa; Jue, Miyeon; Yoon, Hansub; Kim, Chinkyo

2012-12-01

Over a wide range of growth conditions, GaN domains were grown on bare m-plane sapphire substrates by using hydride vapor phase epitaxy (HVPE), and the relation between these growth conditions and three possible preferred crystallographic orientations ([1100], [1103], [1122]) of GaN domains was investigated. In contrast with the previous reports by other groups, our results revealed that preferentially [1100]-oriented GaN domains were grown without low-temperature nitridation or a buffer layer, and that the growth condition of preferentially [1100]-oriented GaN was insensitive to V/III ratio.

Stress generated modifications of epitaxial ferroelectric SrTiO3 films on sapphire

NASA Astrophysics Data System (ADS)

Hollmann, E.; Schubert, J.; Kutzner, R.; Wördenweber, R.

2009-06-01

The effect of lattice-mismatch induced stress upon the crystallographic structure, strain, strain relaxation, and the generation of different types of defects in heteroepitaxially grown SrTiO3 films on CeO2 buffered sapphire is examined. Depending on the thickness of the SrTiO3 layer, characteristic changes in the structural perfection of the layers, their crystallographic orientation with respect to the substrate system, and their strain is observed. For thin films misfit dislocations partially compensate the stress in the SrTiO3 layer, whereas cracks develop in thicker SrTiO3 films. The cracks are orientated along two predominant crystallographic orientations of the sapphire. The structural modifications and the formation of misfit defects and cracks are explained in a model based on lattice misfit induced stress, on the one hand, and energy considerations taking into account the stress release due to crack formation and the energy necessary for the formation of new surfaces at the crack, on the other hand. The impact of lattice misfit is discussed in two steps, i.e., intrinsic and thermal induced misfits during heteroepitaxial film growth at a given temperature and the subsequent cooling of the sample, respectively. The comparison of the theoretical predictions and the experimental observations demonstrate that intrinsic mismatch and thermal mismatch have to be considered in order to explain strain dependent effects in complex heteroepitaxial layer systems such as induced ferroelectricity of SrTiO3 on sapphire.

X-ray combined analysis of fiber-textured and epitaxial Ba(Sr,Ti)O{sub 3} thin films deposited by radio frequency sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Remiens, D.; Ponchel, F.; Legier, J. F.

2011-06-01

A complete study is given in this paper on the structural properties of Ba(Sr,Ti)O{sub 3} (BST) thin films which present various preferred orientations: (111) and (001) fiber and epitaxial textures. The films are deposited in situ at 800 deg. C by sputtering on Si/SiO{sub 2}/TiO{sub x}/Pt substrates and the orientation is controlled by monitoring the concentration of O{sub 2} in the reactive plasma or by prior deposition of a very thin TiO{sub x} buffer layer between BST films and substrates. The epitaxial films are obtained on (001)-alpha-Al{sub 2}O{sub 3} substrates covered with TiO{sub x} buffer layers. In order to analyzemore » finely the preferred orientations, the texture, the microstructural features, and the anisotropy-related quantities such as residual stresses in the films, the conventional Bragg-Brentano {theta} - 2{theta} x-ray diffraction diagrams is shown not to be sufficient. So, we systematically used x-ray combined analysis, a recently developed methodology which gives access to precise determination of the structure (cell parameters and space group) of the films, their orientation distributions (texture strengths and types) and mean crystallite sizes, their residual stresses. This fine structural analysis shows important modifications between the film qualities which induce differences in BST films electrical behavior, permittivity, loss tangent, and tunability.« less

High ferroelectric polarization in c-oriented BaTiO 3 epitaxial thin films on SrTiO 3/Si(001)

DOE PAGES

Scigaj, M.; Chao, C. H.; Gázquez, J.; ...

2016-09-21

The integration of epitaxial BaTiO 3 films on silicon, combining c-orientation, surface flatness, and high ferroelectric polarization is of main interest towards its use in memory devices. This combination of properties has been only achieved so far by using yttria-stabilized zirconia buffer layers. Here, the all-perovskite BaTiO 3/LaNiO 3/SrTiO 3 heterostructure is grown monolithically on Si(001). The BaTiO 3 films are epitaxial and c-oriented and present low surface roughness and high remnant ferroelectric polarization around 6 μC/cm 2. Lastly, this result paves the way towards the fabrication of lead-free BaTiO 3 ferroelectric memories on silicon platforms.

High Tc YBCO superconductor deposited on biaxially textured Ni substrate

DOEpatents

Budai, John D.; Christen, David K.; Goyal, Amit; He, Qing; Kroeger, Donald M.; Lee, Dominic F.; List, III, Frederick A.; Norton, David P.; Paranthaman, Mariappan; Sales, Brian C.; Specht, Eliot D.

1999-01-01

A superconducting article includes a biaxially-textured Ni substrate, and epitaxial buffer layers of Pd (optional), CeO.sub.2 and YSZ, and a top layer of in-plane aligned, c-axis oriented YBCO having a critical current density (J.sub.c) in the range of at least 100,000 A/cm.sup.2 at 77 K.

Growth and characterization of PbSe and Pb{sub 1{minus}x}Sn{sub x}Se layers on Si (100)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sachar, H.K.; Chao, I.; Fang, X.M.

1998-12-31

Crack-free layers of PbSe were grown on Si (100) by a combination of liquid phase epitaxy (LPE) and molecular beam epitaxy (MBE) techniques. The PbSe layer was grown by LPE on Si(100) using a MBE-grown PbSe/BaF{sub 2}/CaF{sub 2} buffer layer structure. Pb{sub 1{minus}x}Sn{sub x}Se layers with tin contents in the liquid growth solution equal to 3%, 5%, 6%, 7%, and 10%, respectively, were also grown by LPE on Si(100) substrates using similar buffer layer structures. The LPE-grown PbSe and Pb{sub 1{minus}x}Sn{sub x}Se layers were characterized by optical Nomarski microscopy, X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR), and scanning electronmore » microscopy (SEM). Optical Nomarski characterization of the layers revealed their excellent surface morphologies and good growth solution wipe-offs. FTIR transmission experiments showed that the absorption edge of the Pb{sub 1{minus}x}Sn{sub x}Se layers shifted to lower energies with increasing tin contents. The PbSe epilayers were also lifted-off from the Si substrate by dissolving the MBE-grown BaF{sub 2} buffer layer. SEM micrographs of the cleaved edges revealed that the lifted-off layers formed structures suitable for laser fabrication.« less

Strain relaxation of thin Si{sub 0.6}Ge{sub 0.4} grown with low-temperature buffers by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhao, M.; Hansson, G. V.; Ni, W.-X.

A double-low-temperature-buffer variable-temperature growth scheme was studied for fabrication of strain-relaxed thin Si{sub 0.6}Ge{sub 0.4} layer on Si(001) by using molecular beam epitaxy (MBE), with particular focuses on the influence of growth temperature of individual low-temperature-buffer layers on the relaxation process and final structural qualities. The low-temperature buffers consisted of a 40 nm Si layer grown at an optimized temperature of {approx}400 deg. C, followed by a 20 nm Si{sub 0.6}Ge{sub 0.4} layer grown at temperatures ranging from 50 to 550 deg. C. A significant relaxation increase together with a surface roughness decrease both by a factor of {approx}2, accompaniedmore » with the cross-hatch/cross-hatch-free surface morphology transition, took place for the sample containing a low-temperature Si{sub 0.6}Ge{sub 0.4} layer that was grown at {approx}200 deg. C. This dramatic change was explained by the association with a certain onset stage of the ordered/disordered growth transition during the low-temperature MBE, where the high density of misfit dislocation segments generated near surface cusps largely facilitated the strain relaxation of the top Si{sub 0.6}Ge{sub 0.4} layer.« less

Structure characterization of MHEMT heterostructure elements with In0.4Ga0.6As quantum well grown by molecular beam epitaxy on GaAs substrate using reciprocal space mapping

NASA Astrophysics Data System (ADS)

Aleshin, A. N.; Bugaev, A. S.; Ermakova, M. A.; Ruban, O. A.

2016-03-01

The crystallographic parameters of elements of a metamorphic high-electron-mobility transistor (MHEMT) heterostructure with In0.4Ga0.6As quantum well are determined using reciprocal space mapping. The heterostructure has been grown by molecular-beam epitaxy (MBE) on the vicinal surface of a GaAs substrate with a deviation angle of 2° from the (001) plane. The structure consists of a metamorphic step-graded buffer (composed of six layers, including an inverse step), a high-temperature buffer of constant composition, and active high-electron-mobility transistor (HEMT) layers. The InAs content in the metamorphic buffer layers varies from 0.1 to 0.48. Reciprocal space mapping has been performed for the 004 and 224 reflections (the latter in glancing exit geometry). Based on map processing, the lateral and vertical lattice parameters of In x Ga1- x As ternary solid solutions of variable composition have been determined. The degree of layer lattice relaxation and the compressive stress are found within the linear elasticity theory. The high-temperature buffer layer of constant composition (on which active MHEMT layers are directly formed) is shown to have the highest (close to 100%) degree of relaxation in comparison with all other heterostructure layers and a minimum compressive stress.

Long wavelength emitting GaInN quantum wells on metamorphic GaInN buffer layers with enlarged in-plane lattice parameter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Däubler, J., E-mail: juergen.daeubler@iaf.fraunhofer.de; Passow, T.; Aidam, R.

Metamorphic (i.e., linear composition graded) GaInN buffer layers with an increased in-plane lattice parameter, grown by plasma-assisted molecular beam epitaxy, were used as templates for metal organic vapor phase epitaxy (MOVPE) grown GaInN/GaInN quantum wells (QWs), emitting in the green to red spectral region. A composition pulling effect was observed allowing considerable higher growth temperatures for the QWs for a given In composition. The internal quantum efficiency (IQE) of the QWs was determined by temperature and excitation power density dependent photoluminescence (PL) spectroscopy. An increase in IQE by a factor of two was found for green emitting QWs grown onmore » metamorphic GaInN buffer compared to reference samples grown on standard GaN buffer layers. The ratio of room temperature to low temperature intensity PL of the red emitting QWs were found to be comparable to the PL efficiency of green emitting QWs, both grown on metamorphic GaInN buffers. The excitation density and well width dependence of the IQE indicate a reduction of the quantum confined Stark effect upon growth on GaInN buffer layers with increased in-plane lattice parameter.« less

Quasi van der Waals epitaxy of copper thin film on single-crystal graphene monolayer buffer

NASA Astrophysics Data System (ADS)

Lu, Zonghuan; Sun, Xin; Washington, Morris A.; Lu, Toh-Ming

2018-03-01

Quasi van der Waals epitaxial growth of face-centered cubic Cu (~100 nm) thin films on single-crystal monolayer graphene is demonstrated using thermal evaporation at an elevated substrate temperature of 250 °C. The single-crystal graphene was transferred to amorphous (glass) and crystalline (quartz) SiO2 substrates for epitaxy study. Raman analysis showed that the thermal evaporation method had minimal damage to the graphene lattice during the Cu deposition. X-ray diffraction and electron backscatter diffraction analyses revealed that both Cu films are single-crystal with (1 1 1) out-of-plane orientation and in-plane Σ3 twin domains of 60° rotation. The crystallinity of the SiO2 substrates has a negligible effect on the Cu crystal orientation during the epitaxial growth, implying the strong screening effect of graphene. We also demonstrate the epitaxial growth of polycrystalline Cu on a commercial polycrystalline monolayer graphene consisting of two orientation domains offset 30° to each other. It confirms that the crystal orientation of the epitaxial Cu film follows that of graphene, i.e. the Cu film consists of two orientation domains offset 30° to each other when deposited on polycrystalline graphene. Finally, on the contrary to the report in the literature, we show that the direct current and radio frequency flip sputtering method causes significant damage to the graphene lattice during the Cu deposition process, and therefore neither is a suitable method for Cu epitaxial growth on graphene.

Quality-enhanced In{sub 0.3}Ga{sub 0.7}As film grown on GaAs substrate with an ultrathin amorphous In{sub 0.6}Ga{sub 0.4}As buffer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gao, Fangliang; Li, Guoqiang, E-mail: msgli@scut.edu.cn

2014-01-27

Using low-temperature molecular beam epitaxy, amorphous In{sub 0.6}Ga{sub 0.4}As layers have been grown on GaAs substrates to act as buffer layers for the subsequent epitaxial growth of In{sub 0.3}Ga{sub 0.7}As films. It is revealed that the crystallinity of as-grown In{sub 0.3}Ga{sub 0.7}As films is strongly affected by the thickness of the large-mismatched amorphous In{sub 0.6}Ga{sub 0.4}As buffer layer. Given an optimized thickness of 2 nm, this amorphous In{sub 0.6}Ga{sub 0.4}As buffer layer can efficiently release the misfit strain between the In{sub 0.3}Ga{sub 0.7}As epi-layer and the GaAs substrate, trap the threading and misfit dislocations from propagating to the following In{sub 0.3}Ga{submore » 0.7}As epi-layer, and reduce the surface fluctuation of the as-grown In{sub 0.3}Ga{sub 0.7}As, leading to a high-quality In{sub 0.3}Ga{sub 0.7}As film with competitive crystallinity to that grown on GaAs substrate using compositionally graded In{sub x}Ga{sub 1-x}As metamorphic buffer layers. Considering the complexity of the application of the conventional In{sub x}Ga{sub 1-x}As graded buffer layers, this work demonstrates a much simpler approach to achieve high-quality In{sub 0.3}Ga{sub 0.7}As film on GaAs substrate and, therefore, is of huge potential for the InGaAs-based high-efficiency photovoltaic industry.« less

Infrared Reflectance Analysis of Epitaxial n-Type Doped GaN Layers Grown on Sapphire.

PubMed

Tsykaniuk, Bogdan I; Nikolenko, Andrii S; Strelchuk, Viktor V; Naseka, Viktor M; Mazur, Yuriy I; Ware, Morgan E; DeCuir, Eric A; Sadovyi, Bogdan; Weyher, Jan L; Jakiela, Rafal; Salamo, Gregory J; Belyaev, Alexander E

2017-12-01

Infrared (IR) reflectance spectroscopy is applied to study Si-doped multilayer n + /n 0 /n + -GaN structure grown on GaN buffer with GaN-template/sapphire substrate. Analysis of the investigated structure by photo-etching, SEM, and SIMS methods showed the existence of the additional layer with the drastic difference in Si and O doping levels and located between the epitaxial GaN buffer and template. Simulation of the experimental reflectivity spectra was performed in a wide frequency range. It is shown that the modeling of IR reflectance spectrum using 2 × 2 transfer matrix method and including into analysis the additional layer make it possible to obtain the best fitting of the experimental spectrum, which follows in the evaluation of GaN layer thicknesses which are in good agreement with the SEM and SIMS data. Spectral dependence of plasmon-LO-phonon coupled modes for each GaN layer is obtained from the spectral dependence of dielectric of Si doping impurity, which is attributed to compensation effects by the acceptor states.

Electron microscopy characterization of AlGaN/GaN heterostructures grown on Si (111) substrates

NASA Astrophysics Data System (ADS)

Gkanatsiou, A.; Lioutas, Ch. B.; Frangis, N.; Polychroniadis, E. K.; Prystawko, P.; Leszczynski, M.

2017-03-01

AlGaN/GaN buffer heterostructures were grown on "on axis" and 4 deg off Si (111) substrates by MOVPE. The electron microscopy study reveals the very good epitaxial growth of the layers. Almost c-plane orientated nucleation grains are achieved after full AlN layer growth. Step-graded AlGaN layers were introduced, in order to prevent the stress relaxation and to work as a dislocation filter. Thus, a crack-free smooth surface of the final GaN epitaxial layer is achieved in both cases, making the buffer structure ideal for the forthcoming growth of the heterostructure (used for HEMT device applications). Finally, the growth of the AlGaN/GaN heterostructure on top presents characteristic and periodic undulations (V-pits) on the surface, due to strain relaxation reasons. The AlN interlayer grown in between the heterostructure demonstrates an almost homogeneous thickness, probably reinforcing the 2DEG electrical characteristics.

Growth of high-Sn content (28%) GeSn alloy films by sputtering epitaxy

NASA Astrophysics Data System (ADS)

Zheng, Jun; Liu, Zhi; Zhang, Yongwang; Zuo, Yuhua; Li, Chuanbo; Xue, Chunlai; Cheng, Buwen; Wang, Qiming

2018-06-01

Crystalline GeSn thin films with Sn content up to 0.28 were deposited on Sn graded GeSn buffer on a Ge substrate at low temperatures by sputtering epitaxy. The structural properties of the high-Sn content GeSn alloy films were characterized by high resolution transmission electron microscopy and X-ray diffraction. The effect of annealing on the segregation of Sn in the high-Sn content GeSn film was investigated, and both the Ge0.72Sn0.28 and the Ge0.8Sn0.2 films were found to be stable after annealing at temperatures below 400 °C, which meets the needs of thermal budget for future photonic devices fabrication. The present results indicate that sputtering epitaxy is cost-effective method for growing high-Sn GeSn films.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Scigaj, M.; Chao, C. H.; Gázquez, J.

The integration of epitaxial BaTiO 3 films on silicon, combining c-orientation, surface flatness, and high ferroelectric polarization is of main interest towards its use in memory devices. This combination of properties has been only achieved so far by using yttria-stabilized zirconia buffer layers. Here, the all-perovskite BaTiO 3/LaNiO 3/SrTiO 3 heterostructure is grown monolithically on Si(001). The BaTiO 3 films are epitaxial and c-oriented and present low surface roughness and high remnant ferroelectric polarization around 6 μC/cm 2. Lastly, this result paves the way towards the fabrication of lead-free BaTiO 3 ferroelectric memories on silicon platforms.

MgO buffer layers on rolled nickel or copper as superconductor substrates

DOEpatents

Paranthaman, Mariappan; Goyal, Amit; Kroeger, Donald M.; List, III, Frederic A.

2001-01-01

Buffer layer architectures are epitaxially deposited on biaxially-textured rolled-Ni and/or Cu substrates for high current conductors, and more particularly buffer layer architectures such as MgO/Ag/Pt/Ni, MgO/Ag/Pd/Ni, MgO/Ag/Ni, MgO/Ag/Pd/Cu, MgO/Ag/Pt/Cu, and MgO/Ag/Cu. Techniques used to deposit these buffer layers include electron beam evaporation, thermal evaporation, rf magnetron sputtering, pulsed laser deposition, metal-organic chemical vapor deposition (MOCVD), combustion CVD, and spray pyrolysis.

Method for making MgO buffer layers on rolled nickel or copper as superconductor substrates

DOEpatents

Paranthaman, Mariappan; Goyal, Amit; Kroeger, Donald M.; List, III, Frederic A.

2002-01-01

Buffer layer architectures are epitaxially deposited on biaxially-textured rolled-Ni and/or Cu substrates for high current conductors, and more particularly buffer layer architectures such as MgO/Ag/Pt/Ni, MgO/Ag/Pd/Ni, MgO/Ag/Ni, MgO/Ag/Pd/Cu, MgO/Ag/Pt/Cu, and MgO/Ag/Cu. Techniques used to deposit these buffer layers include electron beam evaporation, thermal evaporation, rf magnetron sputtering, pulsed laser deposition, metal-organic chemical vapor deposition (MOCVD), combustion CVD, and spray pyrolysis.

Tailoring the strain in Si nano-structures for defect-free epitaxial Ge over growth.

PubMed

Zaumseil, P; Yamamoto, Y; Schubert, M A; Capellini, G; Skibitzki, O; Zoellner, M H; Schroeder, T

2015-09-04

We investigate the structural properties and strain state of Ge nano-structures selectively grown on Si pillars of about 60 nm diameter with different SiGe buffer layers. A matrix of TEOS SiO2 surrounding the Si nano-pillars causes a tensile strain in the top part at the growth temperature of the buffer that reduces the misfit and supports defect-free initial growth. Elastic relaxation plays the dominant role in the further increase of the buffer thickness and subsequent Ge deposition. This method leads to Ge nanostructures on Si that are free from misfit dislocations and other structural defects, which is not the case for direct Ge deposition on these pillar structures. The Ge content of the SiGe buffer is thereby not a critical parameter; it may vary over a relatively wide range.

Low temperature plasma enhanced CVD epitaxial growth of silicon on GaAs: a new paradigm for III-V/Si integration

NASA Astrophysics Data System (ADS)

Cariou, Romain; Chen, Wanghua; Maurice, Jean-Luc; Yu, Jingwen; Patriarche, Gilles; Mauguin, Olivia; Largeau, Ludovic; Decobert, Jean; Roca I Cabarrocas, Pere

2016-05-01

The integration of III-V semiconductors with silicon is a key issue for photonics, microelectronics and photovoltaics. With the standard approach, namely the epitaxial growth of III-V on silicon, thick and complex buffer layers are required to limit the crystalline defects caused by the interface polarity issues, the thermal expansion, and lattice mismatches. To overcome these problems, we have developed a reverse and innovative approach to combine III-V and silicon: the straightforward epitaxial growth of silicon on GaAs at low temperature by plasma enhanced CVD (PECVD). Indeed we show that both GaAs surface cleaning by SiF4 plasma and subsequent epitaxial growth from SiH4/H2 precursors can be achieved at 175 °C. The GaAs native oxide etching is monitored with in-situ spectroscopic ellipsometry and Raman spectroscopy is used to assess the epitaxial silicon quality. We found that SiH4 dilution in hydrogen during deposition controls the layer structure: the epitaxial growth happens for deposition conditions at the transition between the microcrystalline and amorphous growth regimes. SIMS and STEM-HAADF bring evidences for the interface chemical sharpness. Together, TEM and XRD analysis demonstrate that PECVD enables the growth of high quality relaxed single crystal silicon on GaAs.

Spectroscopic and microscopic investigation of MBE-grown CdTe (211)B epitaxial thin films on GaAs (211)B substrates

NASA Astrophysics Data System (ADS)

Özden, Selin; Koc, Mumin Mehmet

2018-03-01

CdTe epitaxial thin films, for use as a buffer layer for HgCdTe defectors, were grown on GaAs (211)B using the molecular beam epitaxy method. Wet chemical etching (Everson method) was applied to the epitaxial films using various concentrations and application times to quantify the crystal quality and dislocation density. Surface characterization of the epitaxial films was achieved using Atomic force microscopy and Scanning electron microscopy (SEM) before and after each treatment. The Energy Dispersive X-Ray apparatus of SEM was used to characterize the chemical composition. Untreated CdTe films show smooth surface characteristics with root mean square (RMS) roughnesses of 1.18-3.89 nm. The thicknesses of the CdTe layers formed were calculated via FTIR spectrometry and obtained by ex situ spectroscopic ellipsometry. Raman spectra were obtained for various temperatures. Etch pit densities (EPD) were measured, from which it could be seen that EPD changes between 1.7 × 108 and 9.2 × 108 cm-2 depending on the concentration of the Everson etch solution and treatment time. Structure, shape and depth of pits resulting from each etch pit implementation were also evaluated. Pit widths varying between 0.15 and 0.71 µm with heights varying between 2 and 80 nm were observed. RMS roughness was found to vary by anything from 1.56 to 26 nm.

Molecular beam epitaxy growth of SrO buffer layers on graphite and graphene for the integration of complex oxides

DOE PAGES

Ahmed, Adam S.; Wen, Hua; Ohta, Taisuke; ...

2016-04-27

Here, we report the successful growth of high-quality SrO films on highly-ordered pyrolytic graphite (HOPG) and single-layer graphene by molecular beam epitaxy. The SrO layers have (001) orientation as confirmed by X-ray diffraction (XRD) while atomic force microscopy measurements show continuous pinhole-free films having rms surface roughness of <1.5 Å. Moreover, transport measurements of exfoliated graphene, after SrO deposition, show a strong dependence between the Dirac point and Sr oxidation. As a result, the SrO is leveraged as a buffer layer for more complex oxide integration via the demonstration of (001) oriented SrTiO3 grown atop a SrO/HOPG stack.

Molecular beam epitaxy growth of SrO buffer layers on graphite and graphene for the integration of complex oxides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahmed, Adam S.; Wen, Hua; Ohta, Taisuke

Here, we report the successful growth of high-quality SrO films on highly-ordered pyrolytic graphite (HOPG) and single-layer graphene by molecular beam epitaxy. The SrO layers have (001) orientation as confirmed by X-ray diffraction (XRD) while atomic force microscopy measurements show continuous pinhole-free films having rms surface roughness of <1.5 Å. Moreover, transport measurements of exfoliated graphene, after SrO deposition, show a strong dependence between the Dirac point and Sr oxidation. As a result, the SrO is leveraged as a buffer layer for more complex oxide integration via the demonstration of (001) oriented SrTiO3 grown atop a SrO/HOPG stack.

Structure characterization of MHEMT heterostructure elements with In{sub 0.4}Ga{sub 0.6}As quantum well grown by molecular beam epitaxy on GaAs substrate using reciprocal space mapping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aleshin, A. N., E-mail: a.n.aleshin@mail.ru; Bugaev, A. S.; Ermakova, M. A.

2016-03-15

The crystallographic parameters of elements of a metamorphic high-electron-mobility transistor (MHEMT) heterostructure with In{sub 0.4}Ga{sub 0.6}As quantum well are determined using reciprocal space mapping. The heterostructure has been grown by molecular-beam epitaxy (MBE) on the vicinal surface of a GaAs substrate with a deviation angle of 2° from the (001) plane. The structure consists of a metamorphic step-graded buffer (composed of six layers, including an inverse step), a high-temperature buffer of constant composition, and active high-electron-mobility transistor (HEMT) layers. The InAs content in the metamorphic buffer layers varies from 0.1 to 0.48. Reciprocal space mapping has been performed for themore » 004 and 224 reflections (the latter in glancing exit geometry). Based on map processing, the lateral and vertical lattice parameters of In{sub x}Ga{sub 1–x}As ternary solid solutions of variable composition have been determined. The degree of layer lattice relaxation and the compressive stress are found within the linear elasticity theory. The high-temperature buffer layer of constant composition (on which active MHEMT layers are directly formed) is shown to have the highest (close to 100%) degree of relaxation in comparison with all other heterostructure layers and a minimum compressive stress.« less

Structural characterization and magnetic properties of L10-MnAl films grown on different underlayers by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Takata, Fumiya; Gushi, Toshiki; Anzai, Akihito; Toko, Kaoru; Suemasu, Takashi

2018-03-01

We grow MnAl films on different underlayers by molecular beam epitaxy (MBE), and investigate their structural and magnetic properties. L10-ordered MnAl films were successfully grown both on an MgO(0 0 1) single-crystalline substrate and on an Mn4N(0 0 1) buffer layer formed on MgO(0 0 1) and SrTiO3(0 0 1) substrates. For the MgO substrate, post rapid thermal annealing (RTA) drastically improved the crystalline quality and the degree of L10-ordering, whereas no improvement in the crystallinity was achieved by altering the substrate temperature (TS) during MBE growth. However, high-quality L10-MnAl films were formed on the Mn4N buffer layer by simply varying TS. Structural analysis using X-ray diffraction showed MnAl on an MgO substrate had a cubic structure whereas MnAl on the Mn4N buffer had a tetragonal structure. This difference in crystal structure affected the magnetic properties of the MnAl films. The uniaxial magnetic anisotropy constant (Ku) was drastically improved by inserting an Mn4N buffer layer. We achieved a perpendicular magnetic anisotropy of Ku = 5.0 ± 0.7 Merg/cm3 for MnAl/Mn4N film on MgO and 6.0 ± 0.2 Merg/cm3 on STO. These results suggest that Mn4N has potential as an underlayer for L10-MnAl.

Magnetoresistivity of thin YBa2Cu3O7-δ films on sapphire substrate

NASA Astrophysics Data System (ADS)

Probst, Petra; Il'in, Konstantin; Engel, Andreas; Semenov, Alexei; Hübers, Heinz-Wilhelm; Hänisch, Jens; Holzapfel, Bernhardt; Siegel, Michael

2012-09-01

Magnetoresistivity of YBa2Cu3O7-δ films with thicknesses between 7 and 100 nm deposited on CeO2 and PrBa2Cu3O7-δ buffer layers on sapphire substrate has been measured to analyze the temperature dependence of the second critical magnetic field Bc2. To define Bc2, the mean-field transition temperature Tc was evaluated by fitting the resistive transition in zero magnetic field with the fluctuation conductivity theory of Aslamazov and Larkin. At T → Tc the Bc2(T) dependence shows a crossover from downturn to upturn curvature with the increase in film thickness.

Electrical and structural characteristics of metamorphic In{sub 0.38}Al{sub 0.62}As/In{sub 0.37}Ga{sub 0.63}As/In{sub 0.38}Al{sub 0.62}As HEMT nanoheterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Galiev, G. B., E-mail: s_s_e_r_p@mail.ru; Klimov, E. A.; Klochkov, A. N.

The influence of the metamorphic buffer design and epitaxial growth conditions on the electrical and structural characteristics of metamorphic In{sub 0.38}Al{sub 0.62}As/In{sub 0.37}Ga{sub 0.63}As/In{sub 0.38}Al{sub 0.62}As high electron mobility transistor (MHEMT) nanoheterostructures has been investigated. The samples were grown on GaAs(100) substrates by molecular beam epitaxy. The active regions of the nanoheterostructures are identical, while the metamorphic buffer In{sub x}Al{sub 1-x}As is formed with a linear or stepwise (by {Delta}{sub x} = 0.05) increase in the indium content over depth. It is found that MHEMT nanoheterostructures with a step metamorphic buffer have fewer defects and possess higher values of two-dimensionalmore » electron gas mobility at T = 77 K. The structures of the active region and metamorphic buffer have been thoroughly studied by transmission electron microscopy. It is shown that the relaxation of metamorphic buffer in the heterostructures under consideration is accompanied by the formation of structural defects of the following types: dislocations, microtwins, stacking faults, and wurtzite phase inclusions several nanometers in size.« less

Growth of high-quality InGaN/GaN LED structures on (1 1 1) Si substrates with internal quantum efficiency exceeding 50%

NASA Astrophysics Data System (ADS)

Lee, JaeWon; Tak, Youngjo; Kim, Jun-Youn; Hong, Hyun-Gi; Chae, Suhee; Min, Bokki; Jeong, Hyungsu; Yoo, Jinwoo; Kim, Jong-Ryeol; Park, Youngsoo

2011-01-01

GaN-based light-emitting-diodes (LEDs) on (1 1 1) Si substrates with internal quantum efficiency (IQE) exceeding 50% have been successfully grown by metal organic vapor phase epitaxy (MOVPE). 3.5 μm thick crack-free GaN epitaxial layers were grown on the Si substrates by the re-growth method on patterned templates. Series of step-graded Al xGa 1- xN epitaxial layers were used as the buffer layers to compensate thermal tensile stresses produced during the post-growth cooling process as well as to reduce the density of threading dislocations (TDs) generated due to the lattice mismatches between III-nitride layers and the silicon substrates. The light-emitting region consisted of 1.8 μm thick n-GaN, 3 periods of InGaN/GaN superlattice, InGaN/GaN multiple quantum wells (MQWs) designed for a peak wavelength of about 455 nm, an electron blocking layer (EBL), and p-GaN. The full-widths at half-maximum (FWHM) of (0 0 0 2) and (1 0 -1 2) ω-rocking curves of the GaN epitaxial layers were 410 and 560 arcsec, respectively. Cross-sectional transmission electron microscopy (TEM) investigation revealed that the propagation of the threading dislocations was mostly limited to the interface between the last Al xGa 1- xN buffer and n-GaN layers. The density of the threading dislocations induced pits of n-GaN, as estimated by atomic force microscopy (AFM), was about 5.5×10 8 cm -2. Temperature dependent photoluminescence (PL) measurements with a relative intensity integration method were carried out to estimate the internal quantum efficiency (IQE) of the light-emitting structures grown on Si, which reached up to 55%.

Growth of ferroelectric Ba{sub 0.8}Sr{sub 0.2}TiO{sub 3} epitaxial films by ultraviolet pulsed laser irradiation of chemical solution derived precursor layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Queraltó, A.; Pérez del Pino, A., E-mail: aperez@icmab.es; Mata, M. de la

2015-06-29

Highly crystalline epitaxial Ba{sub 0.8}Sr{sub 0.2}TiO{sub 3} (BST) thin-films are grown on (001)-oriented LaNiO{sub 3}-buffered LaAlO{sub 3} substrates by pulsed laser irradiation of solution derived barium-zirconium-titanium precursor layers using a UV Nd:YAG laser source at atmospheric conditions. The structural analyses of the obtained films, studied by X-ray diffractometry and transmission electron microscopy, demonstrate that laser processing allows the growth of tens of nm-thick BST epitaxial films with crystalline structure similar to that of films obtained through conventional thermal annealing methods. However, the fast pulsed nature of the laser employed leads to crystallization kinetic evolution orders of magnitude faster than inmore » thermal treatments. The combination of specific photothermal and photochemical mechanisms is the main responsible for the ultrafast epitaxial laser-induced crystallization. Piezoresponse microscopy measurements demonstrate equivalent ferroelectric behavior in laser and thermally annealed films, being the piezoelectric constant ∼25 pm V{sup −1}.« less

Addition of a 5/cm Spectral Resolution Band Model Option to LOWTRAN5.

DTIC Science & Technology

1980-10-01

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Growth and characterization of an InSb infrared photoconductor on Si via an AlSb/GaSb buffer

NASA Astrophysics Data System (ADS)

Jia, Bo Wen; Tan, Kian Hua; Loke, Wan Khai; Wicaksono, Satrio; Yoon, Soon Fatt

2018-05-01

A 99.6% relaxed InSb layer is grown on a 6° offcut (1 0 0) Si substrate via an AlSb/GaSb buffer using molecular beam epitaxy (MBE). A 200 nm GaSb buffer is first grown on Si and the lattice mismatch between them is accommodated by an interfacial misfit (IMF) array consisting of uniformly distributed 90° misfit dislocations. Si delta doping is introduced during the growth of GaSb to reduce the density of threading dislocation. Subsequently, a 50 nm AlSb buffer is grown followed by a 0.8 μm InSb layer. The InSb layer exhibits a 300 K electron mobility of 22,300 cm2/Vs. An InSb photoconductor on Si is demonstrated with a photoconductive gain from 77 K to 200 K under a 700 °C maintained blackbody.

High-Quality GaN Epilayers Achieved by Facet-Controlled Epitaxial Lateral Overgrowth on Sputtered AlN/PSS Templates.

PubMed

He, Chenguang; Zhao, Wei; Zhang, Kang; He, Longfei; Wu, Hualong; Liu, Ningyang; Zhang, Shan; Liu, Xiaoyan; Chen, Zhitao

2017-12-13

It is widely believed that the lack of high-quality GaN wafers severely hinders the progress in GaN-based devices, especially for defect-sensitive devices. Here, low-cost AlN buffer layers were sputtered on cone-shaped patterned sapphire substrates (PSSs) to obtain high-quality GaN epilayers. Without any mask or regrowth, facet-controlled epitaxial lateral overgrowth was realized by metal-organic chemical vapor deposition. The uniform coating of the sputtered AlN buffer layer and the optimized multiple modulation guaranteed high growth selectivity and uniformity of the GaN epilayer. As a result, an extremely smooth surface was achieved with an average roughness of 0.17 nm over 3 × 3 μm 2 . It was found that the sputtered AlN buffer layer could significantly suppress dislocations on the cones. Moreover, the optimized three-dimensional growth process could effectively promote dislocation bending. Therefore, the threading dislocation density (TDD) of the GaN epilayer was reduced to 4.6 × 10 7 cm -2 , which is about an order of magnitude lower than the case of two-step GaN on the PSS. In addition, contamination and crack in the light-emitting diode fabricated on the obtained GaN were also effectively suppressed by using the sputtered AlN buffer layer. All of these advantages led to a high output power of 116 mW at 500 mA with an emission wavelength of 375 nm. This simple, yet effective growth technique is believed to have great application prospects in high-performance TDD-sensitive optoelectronic and electronic devices.

Fabrication Of SNS Weak Links On SOS Substrates

NASA Technical Reports Server (NTRS)

Hunt, Brian D.

1995-01-01

High-quality superconductor/normal-conductor/superconductor (SNS) devices ("weak links") containing epitaxial films of YBa(2)Cu(3)O(7-x) and SrTiO(3) fabricated on silicon-on-sapphire (SOS) substrates with help of improved multilayer buffer system. Process for fabrication of edge-defined SNS weak links described in "Edge-Geometry SNS Devices Made of Y/Ba/Cu" (NPO-18552).

Effect of the nand p-type Si(100) substrates with a SiC buffer layer on the growth mechanism and structure of epitaxial layers of semipolar AlN and GaN

NASA Astrophysics Data System (ADS)

Bessolov, V. N.; Grashchenko, A. S.; Konenkova, E. V.; Myasoedov, A. V.; Osipov, A. V.; Red'kov, A. V.; Rodin, S. N.; Rubets, V. P.; Kukushkin, S. A.

2015-10-01

A new effect of the n-and p-type doping of the Si(100) substrate with a SiC film on the growth mechanism and structure of AlN and GaN epitaxial layers has been revealed. It has been experimentally shown that the mechanism of AlN and GaN layer growth on the surface of a SiC layer synthesized by substituting atoms on n- and p-Si substrates is fundamentally different. It has been found that semipolar AlN and GaN layers on the SiC/Si(100) surface grow in the epitaxial and polycrystalline structures on p-Si and n-Si substrates, respectively. A new method for synthesizing epitaxial semipolar AlN and GaN layers by chloride-hydride epitaxy on silicon substrates has been proposed.

Surface and interface of epitaxial CdTe film on CdS buffered van der Waals mica substrate

NASA Astrophysics Data System (ADS)

Yang, Y.-B.; Seewald, L.; Mohanty, Dibyajyoti; Wang, Y.; Zhang, L. H.; Kisslinger, K.; Xie, Weiyu; Shi, J.; Bhat, I.; Zhang, Shengbai; Lu, T.-M.; Wang, G.-C.

2017-08-01

Single crystal CdTe films are desirable for optoelectronic device applications. An important strategy of creating films with high crystallinity is through epitaxial growth on a proper single crystal substrate. We report the metalorganic chemical vapor deposition of epitaxial CdTe films on the CdS/mica substrate. The epitaxial CdS film was grown on a mica surface by thermal evaporation. Due to the weak van der Waals forces, epitaxy is achieved despite the very large interface lattice mismatch between CdS and mica (∼21-55%). The surface morphology of mica, CdS and CdTe were quantified by atomic force microscopy. The near surface structures, orientations and texture of CdTe and CdS films were characterized by the unique reflection high-energy electron diffraction surface pole figure technique. The interfaces of CdTe and CdS films and mica were characterized by X-ray pole figure technique and transmission electron microscopy. The out-of-plane and in-plane epitaxy of the heteroepitaxial films stack are determined to be CdTe(111)//CdS(0001)//mica(001) and [1 bar2 1 bar]CdTe//[ 1 bar100]CdS//[010]mica, respectively. The measured photoluminescence (PL), time resolved PL, photoresponse, and Hall mobility of the CdTe/CdS/mica indicate quality films. The use of van der Waals surface to grow epitaxial CdTe/CdS films offers an alternative strategy towards infrared imaging and solar cell applications.

Nanosheet controlled epitaxial growth of PbZr0.52Ti0.48O3 thin films on glass substrates

NASA Astrophysics Data System (ADS)

Bayraktar, M.; Chopra, A.; Bijkerk, F.; Rijnders, G.

2014-09-01

Integration of PbZr0.52Ti0.48O3 (PZT) films on glass substrates is of high importance for device applications. However, to make use of the superior ferro- and piezoelectric properties of PZT, well-oriented crystalline or epitaxial growth with control of the crystal orientation is a prerequisite. In this article, we report on epitaxial growth of PZT films with (100)- and (110)-orientation achieved by utilizing Ca2Nb3O10 (CNO) and Ti0.87O2 (TO) nanosheets as crystalline buffer layers. Fatigue measurements demonstrated stable ferroelectric properties of these films up to 5 × 109 cycles. (100)-oriented PZT films on CNO nanosheets show a large remnant polarization of 21 μC/cm2 that is the highest remnant polarization value compared to (110)-oriented and polycrystalline films reported in this work. A piezoelectric response of 98 pm/V is observed for (100)-oriented PZT film which is higher than the values reported in the literature on Si substrates.

New MBE buffer for micron- and quarter-micron-gateGaAs MESFETs

NASA Technical Reports Server (NTRS)

1988-01-01

A new buffer layer has been developed that eliminates backgating in GaAs MESFETs and substantially reduces short-channel effects in GaAs MESFETs with 0.27-micron-long gates. The new buffer is grown by molecular beam epitaxy (MBE) at a substrate temperature of 200 C using Ga and As sub 4 beam fluxes. The buffer is crystalline, highly resistive, optically inactive, and can be overgrown with high quality GaAs. GaAs MESFETs with a gate length of 0.27 microns that incorporate the new buffer show improved dc and RF properties in comparison with a similar MESFET with a thin undoped GaAs buffer. To demonstrate the backgating performance improvement afforded by the new buffer, MESFETs were fabricated using a number of different buffer layers and structures. A schematic cross section of the MESFET structure used in this study is shown. The measured gate length, gate width, and source-drain spacing of this device are 2,98, and 5.5 microns, respectively. An ohmic contact, isolated from the MESFET by mesa etching, served as the sidegate. The MESFETs were fabricated in MBE n-GaAs layers grown on the new buffer and also in MBE n-GaAs layers grown on buffer layers of undoped GaAs, AlGaAs, and GaAs/AlGaAs superlattices. All the buffer layers were grown by MBE and are 2 microns thick. The active layer is doped to approximately 2 x 10 to the 17th/cu cm with silicon and is 0.3 microns thick.

Microstructural evaluation of strained multilayer InAsSb/InSb infrared detectors by transmission electron microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chadda, S.; Datye, A.; Dawson, L.R.

InSb/InAsSb strained layer superlattices (SLS) were grown on (001) InSb substrates by molecular beam epitaxy at 425 [degree]C. The active device consisted of an InAs[sub 0.15]Sb[sub 0.85]/InSb superlattice region embedded within a [ital p]-[ital i]-[ital n] junction. The large lattice mismatch between the active device and the substrate required the growth of a buffer. InAs[sub 0.15]Sb[sub 0.85]/InSb SLS, where the average As content was gradually increased, was used as a buffer. The buffer structure was varied to probe its microstructural effect on the capping device. Three distinct approaches (A, B, and C) were used to grow the buffer. Approach Amore » was a four-step buffer where the average content of As in the superlattice was increased in four equal composition steps. This approach led to a crystal with an extensive network of threading dislocations and microcracks. Approach B was to change the average composition in five equal composition steps, thereby decreasing the misfit at the interfaces between composition steps. This led to a decrease in the threading dislocation density but microscopic cracks were still evident. The last approach (C) was to employ migration enhanced epitaxy (MEE) for the growth of the five-step buffer. Samples grown by employing MEE revealed no microcracks but they contained a high density of unusual wiggly'' dislocations at the buffer/device interface. Detailed microstructural analysis by transmission electron microscopy is presented.« less

Exploring Cd-Zn-O-S alloys for improved buffer layers in thin-film photovoltaics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Varley, J. B.; Lordi, V.; He, X.

Here, to compete with existing and more mature solar cell technologies such as crystalline Si, thin-film photovoltaics require optimization of every aspect in the device heterostructure to reach maximum efficiencies and cost effectiveness. For absorbers like CdTe, Cu(In,Ga)Se 2 (CIGSe), and Cu 2ZnSn(S,Se) 4 (CZTSSe), improving the n-type buffer layer partner beyond conventional CdS is one avenue that can reduce photocurrent losses and improve overall performance. Here, we use first-principles calculations based on hybrid functionals to explore alloys spanning the Cd-, Zn-, O-, and S-containing phase space to identify compositions that may be superior to common buffers like pure CdSmore » or Zn(O,S). We address issues highly correlated with device performance such as lattice-matching for improved buffer-absorber epitaxy and interface quality, dopability, the band gap for reduced absorption losses in the buffer, and the conduction-band offsets shown to facilitate improved charge separation from photoexcited carriers. We supplement our analysis with device-level simulations as parameterized from our calculations and real devices to assess our conclusions of low-Zn and O content buffers showing improved performance with respect to CdS buffers.« less

Exploring Cd-Zn-O-S alloys for improved buffer layers in thin-film photovoltaics

DOE PAGES

Varley, J. B.; Lordi, V.; He, X.; ...

2017-07-17

Here, to compete with existing and more mature solar cell technologies such as crystalline Si, thin-film photovoltaics require optimization of every aspect in the device heterostructure to reach maximum efficiencies and cost effectiveness. For absorbers like CdTe, Cu(In,Ga)Se 2 (CIGSe), and Cu 2ZnSn(S,Se) 4 (CZTSSe), improving the n-type buffer layer partner beyond conventional CdS is one avenue that can reduce photocurrent losses and improve overall performance. Here, we use first-principles calculations based on hybrid functionals to explore alloys spanning the Cd-, Zn-, O-, and S-containing phase space to identify compositions that may be superior to common buffers like pure CdSmore » or Zn(O,S). We address issues highly correlated with device performance such as lattice-matching for improved buffer-absorber epitaxy and interface quality, dopability, the band gap for reduced absorption losses in the buffer, and the conduction-band offsets shown to facilitate improved charge separation from photoexcited carriers. We supplement our analysis with device-level simulations as parameterized from our calculations and real devices to assess our conclusions of low-Zn and O content buffers showing improved performance with respect to CdS buffers.« less

Engineering the defect state and reducibility of ceria based nanoparticles for improved anti-oxidation performance

NASA Astrophysics Data System (ADS)

Wang, Yan-Jie; Dong, Hao; Lyu, Guang-Ming; Zhang, Huai-Yuan; Ke, Jun; Kang, Li-Qun; Teng, Jia-Li; Sun, Ling-Dong; Si, Rui; Zhang, Jing; Liu, Yan-Jun; Zhang, Ya-Wen; Huang, Yun-Hui; Yan, Chun-Hua

2015-08-01

Due to their excellent anti-oxidation performance, CeO2 nanoparticles receive wide attention in pharmacological application. Deep understanding of the anti-oxidation mechanism of CeO2 nanoparticles is extremely important to develop potent CeO2 nanomaterials for anti-oxidation application. Here, we report a detailed study on the anti-oxidation process of CeO2 nanoparticles. The valence state and coordination structure of Ce are characterized before and after the addition of H2O2 to understand the anti-oxidation mechanism of CeO2 nanoparticles. Adsorbed peroxide species are detected during the anti-oxidation process, which are responsible for the red-shifted UV-vis absorption spectra of CeO2 nanoparticles. Furthermore, the coordination number of Ce in the first coordination shell slightly increased after the addition of H2O2. On the basis of these experimental results, the reactivity of coordination sites for peroxide species is considered to play a key role in the anti-oxidation performance of CeO2 nanoparticles. Furthermore, we present a robust method to engineer the anti-oxidation performance of CeO2 nanoparticles through the modification of the defect state and reducibility by doping with Gd3+. Improved anti-oxidation performance is also observed in cell culture, where the biocompatible CeO2-based nanoparticles can protect INS-1 cells from oxidative stress induced by H2O2, suggesting the potential application of CeO2 nanoparticles in the treatment of diabetes.Due to their excellent anti-oxidation performance, CeO2 nanoparticles receive wide attention in pharmacological application. Deep understanding of the anti-oxidation mechanism of CeO2 nanoparticles is extremely important to develop potent CeO2 nanomaterials for anti-oxidation application. Here, we report a detailed study on the anti-oxidation process of CeO2 nanoparticles. The valence state and coordination structure of Ce are characterized before and after the addition of H2O2 to understand the anti-oxidation mechanism of CeO2 nanoparticles. Adsorbed peroxide species are detected during the anti-oxidation process, which are responsible for the red-shifted UV-vis absorption spectra of CeO2 nanoparticles. Furthermore, the coordination number of Ce in the first coordination shell slightly increased after the addition of H2O2. On the basis of these experimental results, the reactivity of coordination sites for peroxide species is considered to play a key role in the anti-oxidation performance of CeO2 nanoparticles. Furthermore, we present a robust method to engineer the anti-oxidation performance of CeO2 nanoparticles through the modification of the defect state and reducibility by doping with Gd3+. Improved anti-oxidation performance is also observed in cell culture, where the biocompatible CeO2-based nanoparticles can protect INS-1 cells from oxidative stress induced by H2O2, suggesting the potential application of CeO2 nanoparticles in the treatment of diabetes. Electronic supplementary information (ESI) available: Size distribution of prepared CeO2-based NPs, HRTEM of prepared CeO2-based NPs, XPS analysis of prepared CeO2-based NPs, EELS analysis of prepared CeO2-based NPs, TG curves and FT-IR spectra of CeO2-based NPs, XANES spectra of CeO2 NPs during the reaction with H2O2, Raman spectrum of CeO2 NPs during the reaction with H2O2 for the second and third cycle, ESR analysis during the reaction, the red shift of UV-vis spectra of CeO2-based NPs after the addition of H2O2, H2-TPR test of CeO2 and CeO2:20%Gd NPs, In vitro cytotoxicity of CeO2-based NPs in INS-1 cells. See DOI: 10.1039/c5nr02588e

Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4° substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kryzhanovskaya, N. V., E-mail: NataliaKryzh@gmail.com; Polubavkina, Yu. S.; Nevedomskiy, V. N.

The structural and optical properties of GaP and GaPN layers synthesized by molecular-beam epitaxy on Si(100) substrates misoriented by 4° are studied. The possibility of producing GaP buffer layers that exhibit a high degree of heterointerface planarity and an outcropping dislocation density of no higher than ~2 × 10{sup 8} cm{sup –2} is shown. Emission from the Si/GaP/GaPN structure in the spectral range of 630–640 nm at room temperature is observed. Annealing during growth of the Si/GaP/GaPN structure makes it possible to enhance the room-temperature photoluminescence intensity by a factor of 2.6, with no shift of the maximum of themore » emission line.« less

Factors influencing epitaxial growth of three-dimensional Ge quantum dot crystals on pit-patterned Si substrate.

PubMed

Ma, Y J; Zhong, Z; Yang, X J; Fan, Y L; Jiang, Z M

2013-01-11

We investigated the molecular beam epitaxy growth of three-dimensional (3D) Ge quantum dot crystals (QDCs) on periodically pit-patterned Si substrates. A series of factors influencing the growth of QDCs were investigated in detail and the optimized growth conditions were found. The growth of the Si buffer layer and the first quantum dot (QD) layer play a key role in the growth of QDCs. The pit facet inclination angle decreased with increasing buffer layer thickness, and its optimized value was found to be around 21°, ensuring that all the QDs in the first layer nucleate within the pits. A large Ge deposition amount in the first QD layer favors strain build-up by QDs, size uniformity of QDs and hence periodicity of the strain distribution; a thin Si spacer layer favors strain correlation along the growth direction; both effects contribute to the vertical ordering of the QDCs. Results obtained by atomic force microscopy and cross-sectional transmission electron microscopy showed that 3D ordering was achieved in the Ge QDCs with the highest ever areal dot density of 1.2 × 10(10) cm(-2), and that the lateral and the vertical interdot spacing were ~10 and ~2.5 nm, respectively.

Direct charge carrier injection into Ga2O3 thin films using an In2O3 cathode buffer layer: their optical, electrical and surface state properties

NASA Astrophysics Data System (ADS)

Cui, W.; Zhao, X. L.; An, Y. H.; Guo, D. Y.; Qing, X. Y.; Wu, Z. P.; Li, P. G.; Li, L. H.; Cui, C.; Tang, W. H.

2017-04-01

Conductive Ga2O3 thin films with an In2O3 buffer layer have been prepared on c-plane sapphire substrates using a laser molecular beam epitaxy technique. The effects of the In2O3 buffer layer on the structure and optical, electrical and surface state properties of the Ga2O3 films have been studied. The change in conductivity of the thin films is attributed to different thicknesses of the In2O3 buffer layer, which determine the concentration of charge carriers injected into the upper Ga2O3 layer from the interface of the bilayer thin films. In addition, the increase in flat band voltage shift and capacitance values as the In2O3 buffer layer thickens are attributed to the increase in surface state density, which also contributes to the rapid shrinkage of the optical band gap of the Ga2O3. With transparency to visible light, high n-type conduction and the ability to tune the optical band gap and surface state density, we propose that Ga2O3/In2O3 bilayer thin film is an ideal n-type semiconductor for fabrication of transparent power devices, solar cell electrodes and gas sensors.

Ionic Conductivity Increased by Two Orders of Magnitude in Micrometer-Thick Vertical Yttria-Stabilized ZrO 2 Nanocomposite Films

DOE PAGES

Lee, Shinbuhm; Zhang, Wenrui; Khatkhatay, Fauzia; ...

2015-09-03

We design and create a unique cell geometry of templated micrometer-thick epitaxial nanocomposite films which contain ~20 nm diameter yttria-stabilized ZrO 2 (YSZ) nanocolumns, strain coupled to a SrTiO 3 matrix. We also enhanced the ionic conductivity of these nanocolumnsby over 2 orders of magnitude compared to plain YSZ films. Concomitant with the higher ionic conduction is the finding that the YSZ nanocolumns in the films have much higher crystallinity and orientation, compared to plain YSZ films. Hence, “oxygen migration highways” are formed in the desired out-of-plane direction. This improved structure is shown to originate from the epitaxial coupling ofmore » the YSZ nanocolumns to the SrTiO 3 film matrix and from nucleation of the YSZ nanocolumns on an intermediate nanocomposite base layer of highly aligned Sm-doped CeO 2 nanocolumns within the SrTiO 3 matrix. Furthermore, this intermediate layer reduces the lattice mismatch between the YSZ nanocolumns and the substrate. Vertical ionic conduction values as high as 10 –2 Ω –1 cm –1 were demonstrated at 360 °C (300 °C lower than plain YSZ films), showing the strong practical potential of these nanostructured films for use in much lower operation temperature ionic devices.« less

Ultrathin epitaxial barrier layer to avoid thermally induced phase transformation in oxide heterostructures

DOE PAGES

Baek, David J.; Lu, Di; Hikita, Yasuyuki; ...

2016-12-22

Incorporating oxides with radically different physical and chemical properties into heterostructures offers tantalizing possibilities to derive new functions and structures. Recently, we have fabricated freestanding 2D oxide membranes using the water-soluble perovskite Sr 3Al 2O 6 as a sacrificial buffer layer. Here, with atomic-resolution spectroscopic imaging, we observe that direct growth of oxide thin films on Sr 3Al 2O 6 can cause complete phase transformation of the buffer layer, rendering it water-insoluble. More importantly, we demonstrate that an ultrathin SrTiO 3 layer can be employed as an effective barrier to preserve Sr 3Al 2O 6 during subsequent growth, thus allowingmore » its integration in a wider range of oxide heterostructures.« less

Probing the dielectric response of the interfacial buffer layer in epitaxial graphene via optical spectroscopy

NASA Astrophysics Data System (ADS)

Hill, Heather M.; Rigosi, Albert F.; Chowdhury, Sugata; Yang, Yanfei; Nguyen, Nhan V.; Tavazza, Francesca; Elmquist, Randolph E.; Newell, David B.; Hight Walker, Angela R.

2017-11-01

Monolayer epitaxial graphene (EG) is a suitable candidate for a variety of electronic applications. One advantage of EG growth on the Si face of SiC is that it develops as a single crystal, as does the layer below, referred to as the interfacial buffer layer (IBL), whose properties include an electronic band gap. Although much research has been conducted to learn about the electrical properties of the IBL, not nearly as much work has been reported on the optical properties of the IBL. In this work, we combine measurements from Mueller matrix ellipsometry, differential reflectance contrast, atomic force microscopy, and Raman spectroscopy, as well as calculations from Kramers-Kronig analyses and density-functional theory, to determine the dielectric function of the IBL within the energy range of 1 eV to 8.5 eV.

Soft X-ray multilayers produced by sputtering and molecular beam epitaxy (MBE) - Substrate and interfacial roughness

NASA Astrophysics Data System (ADS)

Kearney, Patrick A.; Slaughter, J. M.; Powers, K. D.; Falco, Charles M.

1988-01-01

Roughness measurements were made on uncoated silicon wafers and float glass using a WYKO TOPO-3D phase shifting interferometry, and the results are reported. The wafers are found to be slightly smoother than the flat glass. The effects of different cleaning methods and of the deposition of silicon 'buffer layers' on substrate roughness are examined. An acid cleaning method is described which gives more consistent results than detergent cleaning. Healing of the roughness due to sputtered silicon buffer layers was not observed on the length scale probed by the WYKO. Sputtered multilayers are characterized using both the WYKO interferometer and low-angle X-ray diffraction in order to yield information about the roughness of the top surface and of the multilayer interfaces. Preliminary results on film growth using molecular beam epitaxy are also presented.

Superconducting YBa2Cu3O7- δ Thin Film Detectors for Picosecond THz Pulses

NASA Astrophysics Data System (ADS)

Probst, P.; Scheuring, A.; Hofherr, M.; Wünsch, S.; Il'in, K.; Semenov, A.; Hübers, H.-W.; Judin, V.; Müller, A.-S.; Hänisch, J.; Holzapfel, B.; Siegel, M.

2012-06-01

Ultra-fast THz detectors from superconducting YBa2Cu3O7- δ (YBCO) thin films were developed to monitor picosecond THz pulses. YBCO thin films were optimized by the introduction of CeO2 and PrBaCuO buffer layers. The transition temperature of 10 nm thick films reaches 79 K. A 15 nm thick YBCO microbridge (transition temperature—83 K, critical current density at 77 K—2.4 MA/cm2) embedded in a planar log-spiral antenna was used to detect pulsed THz radiation of the ANKA storage ring. First time resolved measurements of the multi-bunch filling pattern are presented.

IR detector system based on high-Tc superconducting bolometer on SI membrane

NASA Astrophysics Data System (ADS)

Burnus, M.; Hefle, G.; Heidenblut, T.; Khrebtov, Igor A.; Laukemper, J.; Michalke, W.; Neff, H.; Schwierzi, B.; Semtchinova, O. K.; Steinbeiss, E.; Tkachenko, A. D.

1996-06-01

An infrared detector system based on high-T(subscript c) superconducting (HTS) membrane bolometer is reported. Superconducting transition-edge bolometer has been manufactured by silicon micromachining using an epitaxial GdBa(subscript 2)Cu(subscript 3)O(subscript 7-x) film on an epitaxial yttria- stabilized zirconia buffer layer on silicon. The active area of the element is 0.85 X 0.85 mm(superscript 2). The membrane thickness is 1 micrometers , those of the buffer layer and HTS films are 50 nm. The detectivity of bolometer, D(superscript *), is 3.8 X 10(superscript 9) cm Hz(superscript 1/2) W(superscript -1) at 84.5 K and within the frequency regime 100 < f < 300 Hz. The optical response is 580 V/W at time constant 0.4 ms. This is one of the fastest composite type HTS-bolometer ever reported. The bolometer is mounted on a metal N(subscript 2)-liquid cryostat, which fits the preamplifier. With the volume of N(subscript 2)-reservoir being 0.1 liter, the cryostat holds nitrogen for about 8 hours. Using only wire heater with constant current, the temperature stability of about 0.03 K/h is achieved. The detector system can be used in IR- Fourier spectroscopy at wavelengths longer than the typical operating range of semiconductor detectors (wavelength greater than about 20 micrometers ).

Dielectric response and structure of in-plane tensile strained BaTiO3 thin films grown on the LaNiO3 buffered Si substrate

NASA Astrophysics Data System (ADS)

Qiao, Liang; Bi, Xiaofang

2008-02-01

Highly (001)-textured BaTiO3 films were grown epitaxially on the LaNiO3 buffered Si substrate. A strong in-plane tensile strain has been revealed by using x-ray diffraction and high resolution transmission electron microscopy. The BaTiO3 film has exhibited a small remnant polarization, indicating the presence of ca1/ca2/ca1/ca2 polydomain state in the film. Temperature dependent dielectric permittivity has demonstrated that two phase transitions occurred at respective temperatures of 170 and 30°C. The result was discussed in detail based on the misfit strain-temperature phase diagrams theory.

Zero lattice mismatch and twin-free single crystalline ScN buffer layers for GaN growth on silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lupina, L.; Zoellner, M. H.; Dietrich, B.

2015-11-16

We report the growth of thin ScN layers deposited by plasma-assisted molecular beam epitaxy on Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3}/Si(111) substrates. Using x-ray diffraction, Raman spectroscopy, and transmission electron microscopy, we find that ScN films grown at 600 °C are single crystalline, twin-free with rock-salt crystal structure, and exhibit a direct optical band gap of 2.2 eV. A high degree of crystalline perfection and a very good lattice matching between ScN and GaN (misfit < 0.1%) makes the ScN/Sc{sub 2}O{sub 3}/Y{sub 2}O{sub 3} buffer system a very promising template for the growth of high quality GaN layers on silicon.

Surface and interface of epitaxial CdTe film on CdS buffered van der Waals mica substrate

DOE PAGES

Yang, Y. -B.; Seewald, L.; Mohanty, Dibyajyoti; ...

2017-03-31

We report single crystal CdTe films are desirable for optoelectronic device applications. An important strategy of creating films with high crystallinity is through epitaxial growth on a proper single crystal substrate. We report the metalorganic chemical vapor deposition of epitaxial CdTe films on the CdS/mica substrate. The epitaxial CdS film was grown on a mica surface by thermal evaporation. Due to the weak van der Waals forces, epitaxy is achieved despite the very large interface lattice mismatch between CdS and mica (~21–55%). The surface morphology of mica, CdS and CdTe were quantified by atomic force microscopy. The near surface structures, orientations and texture of CdTe and CdS films were characterized by the unique reflection high-energy electron diffraction surface pole figure technique. The interfaces of CdTe and CdS films and mica were characterized by X-ray pole figure technique and transmission electron microscopy. The out-of-plane and in-plane epitaxy of the heteroepitaxial films stack are determined to be CdTe(111)//CdS(0001)//mica(001) and [more » $$\\overline{1}2\\overline{1}$$] CdTe//[$$\\overline{1}100$$] CdS//[010] mica, respectively. The measured photoluminescence (PL), time resolved PL, photoresponse, and Hall mobility of the CdTe/CdS/mica indicate quality films. Finally, the use of van der Waals surface to grow epitaxial CdTe/CdS films offers an alternative strategy towards infrared imaging and solar cell applications.« less

Surface and interface of epitaxial CdTe film on CdS buffered van der Waals mica substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Y. -B.; Seewald, L.; Mohanty, Dibyajyoti

We report single crystal CdTe films are desirable for optoelectronic device applications. An important strategy of creating films with high crystallinity is through epitaxial growth on a proper single crystal substrate. We report the metalorganic chemical vapor deposition of epitaxial CdTe films on the CdS/mica substrate. The epitaxial CdS film was grown on a mica surface by thermal evaporation. Due to the weak van der Waals forces, epitaxy is achieved despite the very large interface lattice mismatch between CdS and mica (~21–55%). The surface morphology of mica, CdS and CdTe were quantified by atomic force microscopy. The near surface structures, orientations and texture of CdTe and CdS films were characterized by the unique reflection high-energy electron diffraction surface pole figure technique. The interfaces of CdTe and CdS films and mica were characterized by X-ray pole figure technique and transmission electron microscopy. The out-of-plane and in-plane epitaxy of the heteroepitaxial films stack are determined to be CdTe(111)//CdS(0001)//mica(001) and [more » $$\\overline{1}2\\overline{1}$$] CdTe//[$$\\overline{1}100$$] CdS//[010] mica, respectively. The measured photoluminescence (PL), time resolved PL, photoresponse, and Hall mobility of the CdTe/CdS/mica indicate quality films. Finally, the use of van der Waals surface to grow epitaxial CdTe/CdS films offers an alternative strategy towards infrared imaging and solar cell applications.« less

Fabrication and Properties of Cr2O3 and La0.7Sr0.3MnO3 Thin Film Heterostructures Integrated on Si(001)

NASA Astrophysics Data System (ADS)

Punugupati, Sandhyarani

Spintronics that utilizes both the spin and charge degrees of freedom of an electron is emerged as an alternate memory technology to conventional CMOS electronics. Many proposed spintronic devices require multifunctional properties in a single material. The oxides Cr2O3 and La0.7Sr0.3MnO3 are such materials which exhibit unique physical properties at room temperature. The Cr2O3 is an antiferromagnetic and magnetoelectric material below its Neel temperature 307K. The La0.7Sr0.3MnO3 is a ferromagnetic half metal with a Curie temperature of 360K and exhibits colossal magnetoresistance. However, the reach of this spintronic technology into more device applications is possible only when these materials in epitaxial thin film form are integrated with Si(001) which is the mainstay substrate in semiconductor industry. The primary objective of this dissertation was to integrate epitaxial Cr2O3, La0.7Sr0.3MnO3 and Cr2O3/La0.7Sr0.3MnO3 thin film heterostructure on Si(001) and, study their physical properties to investigate structure-processing-property relationship in these heterostructures. The epitaxial integration of Cr2O3 thin films on Si(001) was done using epitaxial cubic yttria stabilized zirconia (c-YSZ) buffer layer by pulsed laser deposition. Detailed structural characterizations XRD (2theta and phi) and TEM confirm the epitaxial nature of the films. Though bulk Cr2O3 is antiferromagnetic along the c-axis, the in-plane magnetization measurements on Cr2O3(0001) thin films showed ferromagnetic behavior up to 400K. The thickness dependent magnetization together with oxygen annealing results suggested that the in-plane ferromagnetism in Cr2O3 was due to the oxygen related defects whose concentration is controlled by strain in the films. The out-of-plane magnetic measurements on Cr2O3(0001) films showed magnetic behavior indicative of antiferromagnetic nature. To verify whether ferromagnetism can be induced by strain in Cr 2O3 thin films with orientation other than (0001), epitaxial thin films were prepared on r-Al2O3 substrate and their magnetic properties were studied. The XRD (2theta and phi) and TEM confirm that the films were grown epitaxially. The epitaxial relations were given as: [011¯2]Cr2O3 || [011¯2]Al2O 3 and [1¯1¯20]Cr2O3 || [1¯1¯20]Al 2O3. The as-deposited films showed ferromagnetic behavior up to 400K but it almost vanished with oxygen annealing. The Raman spectroscopy data together with strain measurements using XRD indicated that ferromagnetism in r-Cr2O3 thin films was due to the strain caused by defects such as oxygen vacancies. Bi-epitaxial La0.7Sr0.3MnO3(110) thin films were integrated on Si(100) with c-YSZ/SrTiO3(STO) buffer layers by pulsed laser deposition. The La0.7Sr0.3MnO 3 and STO thin films had a single [110] out-of-plane orientation but with two in-plane domain variants as confirmed from XRD and TEM study. The growth of STO on c-YSZ was explained by the domain matching epitaxy paradigm. The epitaxial relationship between STO and c-YSZ were written as [110](001)c-YSZ || [1¯11¯](110)STO (or) [110](001)c-YSZ || [1¯12¯](110)STO. The La0.7Sr0.3MnO3 thin films were ferromagnetic with Curie temperature 324K. They also exhibited hysteresis in magnetoresistance under both in-plane and out-of-plane magnetic fields. The highest magnetoresistance in this study was -32% at 50K and 50 kOe for in-plane configuration. Lastly, the epitaxial La0.7Sr0.3MnO3-delta -d(LSMO)/Cr2O3 bilayer structure was integrated with Si(001) using c-YSZ by pulsed laser deposition. The XRD (2theta and phi) and TEM characterizations confirm that the films were grown epitaxially. The epitaxial relations were written as [0001]Cr2O3 || [111]LSMO and [112¯0]Cr2O3 || [101¯]LSMO. Interestingly, when the LSMO thickness was increased from 66 to 528 nm (Cr2O 3=55nm), the magnetization increased by 2-fold and the magnetic nature changed from ferromagnetic to super paramagnetic. In addition, LSMO/Cr 2O3 showed in-plane exchange bias. We believe that the change in the magnetic anisotropy as a function of LSMO layer thickness could cause the change in magnetization and magnetic nature. The magnetic phase separation in oxygen deficient LSMO layer could lead to in-plane exchange bias as Cr 2O3 is not expected to show in-plane exchange.

Present status and strategy of reel-to-reel TFA-MOD process for coated conductors

NASA Astrophysics Data System (ADS)

Izumi, T.; Yoshizumi, M.; Miura, M.; Nakaoka, K.; Ichikawa, Y.; Sutoh, Y.; Miyata, S.; Fukushima, H.; Yamada, Y.; Shiohara, Y.

2009-10-01

On the research and development of a reel-to-reel TFA-MOD (Metal Organic Deposition using Trifluoro-acetates) process, a present status is reviewed and its future strategy is addressed. As a base of the study, the 90 m long tape with uniform I c distribution of the 300 A/cm-width level was obtained on the CeO 2 buffered IBAD-Gd 2Zr 2O 7/Hastelloy C276 substrate. The tape has the 56 m region with the end-to-end I c value of 250 A, which corresponds to maximum product of I c × L of 14,000 Am. Based on the results, several directions on R&D have been studied such as “higher I c”, “higher I c- B”, “higher production rate both in coating/calcinations and crystallization steps” and lower cost buffer/substrate”. Then, an extremely high I c value of 735 A/cm-width was achieved in a short tape by the compositional control (e.g. Ba-deficient), in the starting solutions. On the efforts for achieving higher I c- B properties, high I c values of 115 and 35 A/cm-width under the magnetic fields of 1 and 3 T were obtained by the RE mixture of Y and Gd in REBCO, addition of Zr and a growth rate control process. On the other hand, the production rate for the coating/calcinations process was improved by development of new starting solutions, which uses F-free Y salt instead of TFA salt of Y. The high J c value of 1.9 MA/cm 2 was confirmed using the precursor films fabricated at a high traveling rate of 10 m/h. Concerning a higher rate in the crystallization step, the multi-turning system with a vertical gas flow system was developed. The validity of the concept was confirmed using 2-turn parts of the furnace. The high I c value of 250 A/cm-width was realized in the 5 m tape crystallized with a traveling rate of 3 m/h, which is equivalent to 15 m/h for usage of entire area of the furnace of 10-turns. Furthermore, in order to achieve the lower cost, the architecture of the coated conductor with a low cost buffer/substrate system has been developed. An IBAD buffered substrate using IBAD-MgO layer (CeO 2/LMO/IBAD-MgO/Hastelloy C276) was developed and a high production rate of 24 m/h was realized for IBAD-MgO layer using a small ion gun system with the area of 6 × 22 cm 2. The grain texturing of the substrate was reached the Δ ϕ value of 4° in the CeO 2 layer. This substrate was applied to the above mentioned multi-turning crystallization furnace for TFA-MOD process. Then, a 5 m long tape with 260 A/cm-width (@77 K. s.f.) was achieved. According to the TFA-MOD process in the above achievements, the prospects of each issue for the future stage were independently confirmed. Consequently, R&D combining the above-mentioned achievements for longer tapes are expected in the next stage.

YCo5±x thin films with perpendicular anisotropy grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Sharma, S.; Hildebrandt, E.; Sharath, S. U.; Radulov, I.; Alff, L.

2017-06-01

The synthesis conditions of buffer-free (00l) oriented YCo5 and Y2Co17 thin films onto Al2O3 (0001) substrates have been explored by molecular beam epitaxy (MBE). The manipulation of the ratio of individual atomic beams of Yttrium, Y and Cobalt, Co, as well as growth rate variations allows establishing a thin film phase diagram. Highly textured YCo5±x thin films were stabilized with saturation magnetization of 517 emu/cm3 (0.517 MA/m), coercivity of 4 kOe (0.4 T), and anisotropy constant, K1, equal to 5.34 ×106 erg/cm3 (0.53 MJ/m3). These magnetic parameters and the perpendicular anisotropy obtained without additional underlayers make the material system interesting for application in magnetic recording devices.

Exploration and engineering of physical properties in high-quality Sr2CrReO6 epitaxial films

NASA Astrophysics Data System (ADS)

Lucy, Jeremy Matthew

Double perovskites have proven to be highly interesting materials, particularly in the past two decades, with many materials in this family exhibiting strong correlations. These materials are some of many novel complex oxides with potential spintronics application. Sr2CrReO6, in particular, is a double perovskite with one of the highest Curie temperatures of its class (> 620 K in bulk and ~510-600 K in thin films), as well as high spin polarization, ferrimagnetic behavior, and semiconducting properties. This dissertation covers recent work in exploring and tuning physical properties in epitaxial films of Sr2CrReO6. It starts by providing a background for the field of spintronics and double perovskites, bulk and thin film synthesis of Sr2CrReO6, and standard and specialized characterization techniques utilized in both university and national laboratories, and then provides reports of work on Sr2CrReO6 epitaxial films. Examples of exploration and engineering of properties of Sr2CrReO 6 include: (1) tuning of electrical resistivity, such as at T= 7 K by a factor of 18,000%, via control of oxygen partial pressure during film growth; (2) enhancement of interfacial double perovskite ordering, demonstrated with high-angle annular dark-field scanning transmission electron microscopy, via the use of double perovskite buffer layer substrates; (3) measurement of magnetization suppression near film/substrate interfaces via polarized neutron reflectometry, which reveals a reduction of thickness (from 5.6 nm to 3.6 nm) of the magnetically suppressed interface region due to buffer layer enhancement; (4) strain tunability of atomic spin and orbital moments of Cr, Re, and O atoms probed with x-ray magnetic circular dichroism, which demonstrates ferrimagnetic behavior and reveals important magnetic contributions of the oxygen sites (~0.02 muB/site); (5) strain tunability of large magnetocrystalline anisotropy via applied epitaxial strain, revealing anisotropy fields of up to 10s of tesla; and (6) depth-resolved synchrotron x-ray studies of correlated magnetic and structural relaxation in a thick relaxing film. The utilized techniques and demonstrated results for Sr2CrReO6 will hopefully benefit researchers of complex oxide materials and perhaps stimulate further work on this and other related materials.

Heteroepitaxial growth of In{sub 0.30}Ga{sub 0.70}As high-electron mobility transistor on 200 mm silicon substrate using metamorphic graded buffer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kohen, David, E-mail: david.kohen@asm.com; Nguyen, Xuan Sang; Made, Riko I

We report on the growth of an In{sub 0.30}Ga{sub 0.70}As channel high-electron mobility transistor (HEMT) on a 200 mm silicon wafer by metal organic vapor phase epitaxy. By using a 3 μm thick buffer comprising a Ge layer, a GaAs layer and an InAlAs compositionally graded strain relaxing buffer, we achieve threading dislocation density of (1.0 ± 0.3) × 10{sup 7} cm{sup −2} with a surface roughness of 10 nm RMS. No phase separation was observed during the InAlAs compositionally graded buffer layer growth. 1.4 μm long channel length transistors are fabricated from the wafer with I{sub DS} of 70more » μA/μm and g{sub m} of above 60 μS/μm, demonstrating the high quality of the grown materials.« less

In situ growth, structure, and real-time chemical reactivity of well-defined CeO x-Ru(0001) model surfaces

DOE PAGES

Grinter, David C.; Senanayake, Sanjaya D.; Flege, Jan Ingo

2016-11-15

Ceria is an important material for chemical conversion processes in catalysis. Its intrinsic properties as a reducible oxide can be exploited to achieve catalytic selectivity and activity. However, numerous phenomenological characteristics of ceria remain unknown and its active nature is ever slowly being unraveled. Well defined models of ceria (111) are an important way to systematically study these properties and take advantage of new in situ methods that require pristine materials that allow for the interrogation of the most fundamental traits of this material. The ceria-Ru(0001) model is now the most well studied model surface with numerous aspects of itsmore » preparation, atomic structure and reactivity studied by several groups. The preparation of CeO x structures oriented with a (111) surface termination can be achieved through molecular beam deposition, facilitating the growth of well-defined nanostructures, microparticles, and films on the Ru(0001) surface. The growth mechanism exploits the epitaxial relationship between CeOx and Ru to form a carpet mode of well oriented layers of Osingle bondCesingle bondO. These models can be studied to unravel the atomic structure and the oxidation state (Ce 4+ and Ce 3+), as prepared and under redox conditions (reduction/oxidation) or with reaction using reactants (e.g., H 2, methanol). Here, we present a discussion of these most recent observations pertaining to the growth mode, arrangement of atoms on the surface, characteristic chemical state, and redox chemistry of the CeO x-Ru surface. As a result, with insights from these studies we propose new strategies to further unravel the chemistry of ceria.« less

Very thin, high Ge content Si 0.3Ge 0.7 relaxed buffer grown by MBE on SOI(0 0 1) substrate

NASA Astrophysics Data System (ADS)

Myronov, M.; Shiraki, Y.

2007-04-01

Growth procedure and excellent properties of very thin 240 nm thick, 95% relaxed, high Ge content Si 0.3Ge 0.7 buffer grown on SOI(0 0 1) substrate are demonstrated. All epilayers of the newly developed Si 0.3Ge 0.7/SOI(0 0 1) variable-temperature virtual substrate were grown in a single process by solid-source molecular beam epitaxy. Surface analysis of grown samples revealed smooth, cross-hatch free surface with low root mean square surface roughness of 0.9 nm and low threading dislocations density of 5×10 4 cm -2.

Nanostructures produced by phase-separation during growth of (III-V).sub.1-x(IV.sub.2).sub.x alloys

DOEpatents

Norman, Andrew G [Evergreen, CO; Olson, Jerry M [Lakewood, CO

2007-06-12

Nanostructures (18) and methods for production thereof by phase separation during metal organic vapor-phase epitaxy (MOVPE). An embodiment of one of the methods may comprise providing a growth surface in a reaction chamber and introducing a first mixture of precursor materials into the reaction chamber to form a buffer layer (12) thereon. A second mixture of precursor materials may be provided into the reaction chamber to form an active region (14) on the buffer layer (12), wherein the nanostructure (18) is embedded in a matrix (16) in the active region (14). Additional steps are also disclosed for preparing the nanostructure (18) product for various applications.

Photoconductive antennas based on epitaxial films In0.5Ga0.5As on GaAs (1 1 1)A and (1 0 0)A substrates with a metamorphic buffer

NASA Astrophysics Data System (ADS)

Kuznetsov, K. A.; Galiev, G. B.; Kitaeva, G. Kh; Kornienko, V. V.; Klimov, E. A.; Klochkov, A. N.; Leontyev, A. A.; Pushkarev, S. S.; Maltsev, P. P.

2018-07-01

The terahertz (THz) wave generation by the spiral photoconductive antennas fabricated on the low-temperature and high-temperature grown undoped and Si-doped In0.5Ga0.5As films is studied by the terahertz time-domain spectroscopy method. The In0.5Ga0.5As layers were grown by molecular beam epitaxy on GaAs substrates with (1 0 0) and (1 1 1)A crystallographic orientations utilizing step-graded In x Ga1‑x As metamorphic buffer. The antennas are excited by radiation of Er3+-fiber laser at 1.56 μm wavelength in two regimes: with pulse durations of 2.5 ps or 100 fs. It is found that the THz wave generation is 3–4 times more effective in the case of InGaAs-based antennas on (1 1 1)A GaAs substrates as compared to the (1 0 0) substrates. Power-voltage characteristic of the LT-InGaAs antenna up to and beyond threshold breakdown voltage are reported.

Chemical lift-off and direct wafer bonding of GaN/InGaN P-I-N structures grown on ZnO

NASA Astrophysics Data System (ADS)

Pantzas, K.; Rogers, D. J.; Bove, P.; Sandana, V. E.; Teherani, F. H.; El Gmili, Y.; Molinari, M.; Patriarche, G.; Largeau, L.; Mauguin, O.; Suresh, S.; Voss, P. L.; Razeghi, M.; Ougazzaden, A.

2016-02-01

p-GaN/i-InGaN/n-GaN (PIN) structures were grown epitaxially on ZnO-buffered c-sapphire substrates by metal organic vapor phase epitaxy using the industry standard ammonia precursor for nitrogen. Scanning electron microscopy revealed continuous layers with a smooth interface between GaN and ZnO and no evidence of ZnO back-etching. Energy Dispersive X-ray Spectroscopy revealed a peak indium content of just under 5 at% in the active layers. The PIN structure was lifted off the sapphire by selectively etching away the ZnO buffer in an acid and then direct bonded onto a glass substrate. Detailed high resolution transmission electron microscoy and grazing incidence X-ray diffraction studies revealed that the structural quality of the PIN structures was preserved during the transfer process.

Fabrication of CeO2–MOx (M = Cu, Co, Ni) composite yolk–shell nanospheres with enhanced catalytic properties for CO oxidation

PubMed Central

Shi, Jingjing; Cao, Hongxia; Wang, Ruiyu

2017-01-01

CeO2–MOx (M = Cu, Co, Ni) composite yolk–shell nanospheres with uniform size were fabricated by a general wet-chemical approach. It involved a non-equilibrium heat-treatment of Ce coordination polymer colloidal spheres (Ce-CPCSs) with a proper heating rate to produce CeO2 yolk–shell nanospheres, followed by a solvothermal treatment of as-synthesized CeO2 with M(CH3COO)2 in ethanol solution. During the solvothermal process, highly dispersed MOx species were decorated on the surface of CeO2 yolk–shell nanospheres to form CeO2–MOx composites. As a CO oxidation catalyst, the CeO2–MOx composite yolk–shell nanospheres showed strikingly higher catalytic activity than naked CeO2 due to the strong synergistic interaction at the interface sites between MOx and CeO2. Cycling tests demonstrate the good cycle stability of these yolk–shell nanospheres. The initial concentration of M(CH3COO)2·xH2O in the synthesis process played a significant role in catalytic performance for CO oxidation. Impressively, complete CO conversion as reached at a relatively low temperature of 145 °C over the CeO2–CuOx-2 sample. Furthermore, the CeO2–CuOx catalyst is more active than the CeO2–CoOx and CeO2–NiO catalysts, indicating that the catalytic activity is correlates with the metal oxide. Additionally, this versatile synthesis approach can be expected to create other ceria-based composite oxide systems with various structures for a broad range of technical applications. PMID:29234577

Surface Structure Dependence of SO 2 Interaction with Ceria Nanocrystals with Well-Defined Surface Facets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tumuluri, Uma; Li, Meijun; Cook, Brandon G.

2015-12-31

The effects of the surface structure of ceria (CeO2) on the nature, strength, and amount of species resulting from SO2 adsorption were studied using in situ IR and Raman spectroscopies coupled with mass spectrometry, along with first-principles calculations based on density functional theory (DFT). CeO2 nanocrystals with different morphologies, namely, rods (representing a defective structure), cubes (100 facet), and octahedra (111 facet), were used to represent different CeO2 surface structures. IR and Raman spectroscopic studies showed that the structure and binding strength of adsorbed species from SO2 depend on the shape of the CeO2 nanocrystals. SO2 adsorbs mainly as surfacemore » sulfites and sulfates at room temperature on CeO2 rods, cubes, and octahedra that were either oxidatively or reductively pretreated. The formation of sulfites is more evident on CeO2 octahedra, whereas surface sulfates are more prominent on CeO2 rods and cubes. This is explained by the increasing reducibility of the surface oxygen in the order octahedra < cubes < rods. Bulk sulfites are also formed during SO2 adsorption on reduced CeO2 rods. The formation of surface sulfites and sulfates on CeO2 cubes is in good agreement with our DFT results of SO2 interactions with the CeO2(100) surface. CeO2 rods desorb SO2 at higher temperatures than cubes and octahedra nanocrystals, but bulk sulfates are formed on CeO2 rods and cubes after high-temperature desorption whereas only some surface sulfates/sulfites are left on octahedra. This difference is rationalized by the fact that CeO2 rods have the highest surface basicity and largest amount of defects among the three nanocrystals, so they bind and react with SO2 strongly and are the most degraded after SO2 adsorption cycles. The fundamental understanding obtained in this work on the effects of the surface structure and defects on the interaction of SO2 with CeO2 provides insights for the design of more sulfur-resistant CeO2-based catalysts.« less

Surface Structure Dependence of SO 2 Interaction with Ceria Nanocrystals with Well-defined Surface Facets

DOE PAGES

Tumuluri, Uma; Li, Meijun; Cook, Brandon G.; ...

2015-12-02

The effects of the surface structure of ceria (CeO 2) on the nature, strength, and amount of species resulting from SO 2 adsorption were studied using in situ IR and Raman spectroscopies coupled with mass spectrometry, along with first-principles calculations based on density functional theory (DFT). CeO 2 nanocrystals with different morphologies, namely, rods (representing a defective structure), cubes (100 facet), and octahedra (111 facet), were used to represent different CeO 2 surface structures. IR and Raman spectroscopic studies showed that the structure and binding strength of adsorbed species from SO 2 depend on the shape of the CeO 2more » nanocrystals. SO 2 adsorbs mainly as surface sulfites and sulfates at room temperature on CeO 2 rods, cubes, and octahedra that were either oxidatively or reductively pretreated. The formation of sulfites is more evident on CeO 2 octahedra, whereas surface sulfates are more prominent on CeO 2 rods and cubes. This is explained by the increasing reducibility of the surface oxygen in the order octahedra < cubes < rods. Bulk sulfites are also formed during SO 2 adsorption on reduced CeO 2 rods. The formation of surface sulfites and sulfates on CeO 2 cubes is in good agreement with our DFT results of SO 2 interactions with the CeO 2(100) surface. CeO 2 rods desorb SO2 at higher temperatures than cubes and octahedra nanocrystals, but bulk sulfates are formed on CeO 2 rods and cubes after high-temperature desorption whereas only some surface sulfates/sulfites are left on octahedra. This difference is rationalized by the fact that CeO 2 rods have the highest surface basicity and largest amount of defects among the three nanocrystals, so they bind and react with SO 2 strongly and are the most degraded after SO 2 adsorption cycles. The fundamental understanding obtained in this work on the effects of the surface structure and defects on the interaction of SO 2 with CeO 2 provides insights for the design of more sulfur-resistant CeO 2-based catalysts.« less

Manipulation of Dirac cones in intercalated epitaxial graphene

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Minsung; Tringides, Michael C.; Hershberger, Matthew T.

Graphene is an intriguing material in view of its unique Dirac quasi-particles, and the manipulation of its electronic structure is important in material design and applications. Here, we theoretically investigate the electronic band structure of epitaxial graphene on SiC with intercalation of rare earth metal ions (e.g., Yb and Dy) using first-principles calculations. We can use the intercalation to control the coupling of the constituent components (buffer layer, graphene, and substrate), resulting in strong modification of the graphene band structure. We also demonstrate that the metal-intercalated epitaxial graphene has tunable band structures by controlling the energies of Dirac cones asmore » well as the linear and quadratic band dispersion depending on the intercalation layer and density. Thus, the metal intercalation is a viable method to manipulate the electronic band structure of the epitaxial graphene, which can enhance the functional utility and controllability of the material.« less

Manipulation of Dirac cones in intercalated epitaxial graphene

DOE PAGES

Kim, Minsung; Tringides, Michael C.; Hershberger, Matthew T.; ...

2017-07-12

Graphene is an intriguing material in view of its unique Dirac quasi-particles, and the manipulation of its electronic structure is important in material design and applications. Here, we theoretically investigate the electronic band structure of epitaxial graphene on SiC with intercalation of rare earth metal ions (e.g., Yb and Dy) using first-principles calculations. We can use the intercalation to control the coupling of the constituent components (buffer layer, graphene, and substrate), resulting in strong modification of the graphene band structure. We also demonstrate that the metal-intercalated epitaxial graphene has tunable band structures by controlling the energies of Dirac cones asmore » well as the linear and quadratic band dispersion depending on the intercalation layer and density. Thus, the metal intercalation is a viable method to manipulate the electronic band structure of the epitaxial graphene, which can enhance the functional utility and controllability of the material.« less

Crystal growth of YBCO coated conductors by TFA MOD method

NASA Astrophysics Data System (ADS)

Yoshizumi, M.; Nakanishi, T.; Matsuda, J.; Nakaoka, K.; Sutoh, Y.; Izumi, T.; Shiohara, Y.

2008-09-01

The crystal growth mechanism of TFA (trifluoroacetates)-MOD (metal organic deposition) derived YBa 2Cu 3O y has been investigated to understand the process for higher production rates of the conversion process. YBCO films were prepared by TFA-MOD on CeO 2/Gd 2Zr 2O 7/Hastelloy C276 substrates. The growth rates of YBCO derived from Y:Ba:Cu = 1:2:3 and 1:1.5:3 starting solutions were investigated by XRD and TEM analyses. YBCO growth proceeds in two steps of the epitaxial one from the substrate and solid state reaction. The overall growth rate estimated from the residual amounts of BaF 2 with time measured by XRD is proportional to a square root of P(H 2O). The trend was independent of the composition of starting solutions, however, the growth rate obtained from the 1:1.5:3 starting solutions was high as twice as that of 1:2:3, which could not be explained by the composition of BaF 2 included in the precursor films. On the other hand, the growth rate measured from the thickness of the YBCO quenched film at the same process time showed no difference between the samples of 1:2:3 and 1:1.5:3. The epitaxial growth rate of 1:1.5:3 was also the same as the overall growth rate of that, which means there was no solid state reaction to form YBCO after the epitaxial growth. The YBCO growth mechanism was found to be as follows; YBCO crystals nucleate at the surface of the substrate and epitaxially grow into the precursor by layer-by-layer by a manner with trapping unreacted particles. The amounts of YBCO and the unreacted particles trapped in the YBCO film are independent of the composition of the starting solution in this step. Unreacted particles react with each other to form YBCO and pores by solid state reaction as long as there is BaF 2 left in the film. The Ba-poor starting solution gives little BaF 2 left in the film and so the solid state reaction is completed within a short time, resulting in the fast overall growth rate.

Buffer layers on metal surfaces having biaxial texture as superconductor substrates

DOEpatents

Paranthaman, Mariappan; Lee, Dominic F.; Kroeger, Donald M.; Goyal, Amit

2000-01-01

Buffer layer architectures are epitaxially deposited on biaxially-textured rolled substrates of nickel and/or copper and their alloys for high current conductors, and more particularly buffer layer architectures such as Y.sub.2 O.sub.3 /Ni, YSZ/Y.sub.2 O.sub.3 /Ni, RE.sub.2 O.sub.3 /Ni, (RE=Rare Earth), RE.sub.2 O.sub.3 /Y.sub.2 O.sub.3 /Ni, RE.sub.2 O.sub.3 /CeO.sub.2 /Ni, and RE.sub.2 O.sub.3 /YSZ/CeO.sub.2 /Ni, Y.sub.2 O.sub.3 /Cu, YSZ/Y.sub.2 O.sub.3 /Cu, RE.sub.2 O.sub.3 /Cu, RE.sub.2 O.sub.3 /Y.sub.2 O.sub.3 /Cu, RE.sub.2 O.sub.3 /CeO.sub.2 /Cu, and RE.sub.2 O.sub.3 /YSZ/CeO.sub.2 /Cu. Deposition methods include physical vapor deposition techniques which include electron-beam evaporation, rf magnetron sputtering, pulsed laser deposition, thermal evaporation, and solution precursor approaches, which include chemical vapor deposition, combustion CVD, metal-organic decomposition, sol-gel processing, and plasma spray.

High-resolution structural characterization and magnetic properties of epitaxial Ce-doped yttrium iron garnet thin films

NASA Astrophysics Data System (ADS)

Li, Zhong; Vikram Singh, Amit; Rastogi, Ankur; Gazquez, Jaume; Borisevich, Albina Y.; Mishra, Rohan; Gupta, Arunava

2017-07-01

Thin films of magnetic garnet materials, e.g. yttrium iron garnet (Y3Fe5O12, YIG), are useful for a variety of applications including microwave integrated circuits and spintronics. Substitution of rare earth ions, such as cerium, is known to enhance the magneto-optic Kerr effect (MOKE) as compared to pure YIG. Thin films of Ce0.75Y2.25Fe5O12 (Ce:YIG) have been grown using the pulsed laser deposition (PLD) technique and their crystal structure examined using high resolution scanning transmission electron microscopy. Homogeneous substitution of Ce in YIG, without oxidation to form a separate CeO2 phase, can be realized in a narrow process window with resulting enhancement of the MOKE signal. The thermally generated signal due to spin Seebeck effect for the optimally doped Ce:YIG films has also been investigated.

Enhancement of lower critical field by reducing the thickness of epitaxial and polycrystalline MgB₂ thin films

DOE PAGES

Tan, Teng; Wolak, M. A.; Acharya, Narendra; ...

2015-04-01

For potential applications in superconducting RF cavities, we have investigated the properties of polycrystalline MgB₂ films, including the thickness dependence of the lower critical field Hc₁. MgB₂ thin films were fabricated by hybrid physical-chemical vapor deposition on (0001) SiC substrate either directly (for epitaxial films) or with a MgO buffer layer (for polycrystalline films). When the film thickness decreased from 300 nm to 100 nm, Hc₁ at 5 K increased from around 600 Oe to 1880 Oe in epitaxial films and to 1520 Oe in polycrystalline films. The result is promising for using MgB₂/MgO multilayers to enhance the vortex penetrationmore » field.« less

Development of textured magnesium oxide templates and bicrystals using ion beam assisted deposition

NASA Astrophysics Data System (ADS)

Vallejo, Ronald N.

Recently, there has been an increased research effort in the deposition of near-single-crystal thin films on substrates that do not provide a template for epitaxial crystalline film growth. Ion beam assisted deposition (IBAD) has been demonstrated as one of the most promising methods to artificially control the texture in thin films. Biaxially textured MgO templates of 10 nm thickness were successfully fabricated on glass and silicon substrates without any buffer layers using IBAD. This work has shed insights on several issues. First, surface morphology ˜ 1 nm or better is only a necessary condition for textured IBAD-MgO, but not a sufficient condition. Additional surface preparation must be provided for nucleation and subsequent formation of the textured IBAD-MgO templates. Second, the role of buffer layer on IBAD-MgO texturing. It was found that the ion beam pre-exposure of the substrates prior to IBAD processing provided a sufficient condition for the nucleation and subsequent texture formation of the IBAD grown films. The ion pre-exposure replaced the need for buffer layers in silicon and glass substrates. Finally, by pre-exposing the substrates to Ar + ions, it was found that the ion beam modified the surface and improved the surface roughness of the glass substrates. Textured MgO epi templates were demonstrated for the first time on polymer based substrates (polyimide). This is a crucial step in the realization of epitaxial suspended devices. To achieve an epitaxial film on a sacrificial layer, an epitaxial template film must first be grown prior to subsequent film growth. The role of ion pre-exposure and buffer layer on texture formation was investigated in this part of the work. This thesis also presents groundbreaking results on the fabrication of bicrystal MgO films and bicrystal networks using ion beam assisted deposition. Highly oriented bicrystals, with a common (100) out-of-plane orientation and (110) in-plane orientations having a tilt angle of 45° and 20° have been successfully fabricated. This method has also been used to fabricate two dimensional bicrystal MgO networks in the micrometer scale. The same strategy can be applied to generate nanometer scale bicrystal networks of desired patterns.

Neuroprotective Effect of CeO2@PAA-LXW7 Against H2O2-Induced Cytotoxicity in NGF-Differentiated PC12 Cells.

PubMed

Jia, Jingjing; Zhang, Ting; Chi, Jieshan; Liu, Xiaoma; Sun, Jingjing; Xie, Qizhi; Peng, Sijia; Li, Changyan; Yi, Li

2018-06-07

CeO 2 nanoparticles (nanoceria) have been used in many studies as a powerful free radical scavenger, and LXW7, a small-molecule peptide, can specifically target the integrin αvβ3, whose neuroprotective effects have also been demonstrated. The objective of this study is to observe the neuroprotective effect and potential mechanism of CeO 2 @PAA-LXW7, a new compound that couples CeO 2 @PAA (nanoceria modified with the functional group of polyacrylic acid) with LXW7 via a series of chemical reactions, in H 2 O 2 -induced NGF-differentiated PC12 cells. We examined the effects of LXW7, CeO 2 @PAA, and CeO 2 @PAA-LXW7 on the viability of primary hippocampal neurons and found that there was no significant difference under control conditions, but increased cellular viability was observed in the case of H 2 O 2 -induced injury. We used H 2 O 2 -induced NGF-differentiated PC12 cells as the classical injury model to investigate the neuroprotective effect of CeO 2 @PAA-LXW7. In this study, LXW7, CeO 2 @PAA, and CeO 2 @PAA-LXW7 inhibit H 2 O 2 -induced oxidative stress by reducing the production of reactive oxygen species (ROS) and regulating Bax/Bcl-2, cleaved caspase-3 and mitochondrial cytochrome C (cyto C) in the apoptotic signaling pathways. We found that the levels of phosphorylation of focal adhesion kinase (FAK) and of signal transducer and activator of transcription 3 (STAT3) increased significantly in H 2 O 2 -induced NGF-differentiated PC12 cells, whereas LXW7, CeO 2 @PAA, and CeO 2 @PAA-LXW7 suppressed the increase to different degrees. Among the abovementioned changes, the inhibitory effect of CeO 2 @PAA-LXW7 on H 2 O 2 -induced changes, including the increases in the levels of p-FAK and p-STAT3, is more obvious than that of LXW7 or CeO 2 @PAA alone. In summary, these results suggest that integrin signaling participates in the regulation of apoptosis via the regulation of ROS and of the apoptosis pathway in H 2 O 2 -induced NGF-differentiated PC12 cells. LXW7, CeO 2 @PAA, and CeO 2 @PAA-LXW7 can play neuroprotective roles by counteracting the oxidative stress and apoptosis induced by H 2 O 2 in NGF-differentiated PC12 cells. CeO 2 @PAA-LXW7 exerting a more powerful synergistic effect via the conjunction of LXW7 and CeO 2 @PAA.

CeCo5 thin films with perpendicular anisotropy grown by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Sharma, S.; Hildebrandt, E.; Major, M.; Komissinskiy, P.; Radulov, I.; Alff, L.

2018-04-01

Buffer-free, highly textured (0 0 1) oriented CeCo5 thin films showing perpendicular magnetic anisotropy were synthesized on (0 0 1) Al2O3 substrates by molecular beam epitaxy. Ce exists in a mixture of Ce3+ and Ce4+ valence states as shown by X-ray photoelectron spectroscopy. The first anisotropy constant, K1, as measured by torque magnetometry was 0.82 MJ/m3 (8.2 ×106erg /cm3) . A maximum coercivity of 5.16 kOe with a negative temperature coefficient of -0.304%K-1 and a magnetization of 527.30 emu/cm3 was measured perpendicular to the film plane at 5 K. In addition, a large anisotropy of the magnetic moment of 15.5% was observed. These magnetic parameters make CeCo5 a potential candidate material for spintronic and magnetic recording applications.

Mechanical, lattice dynamical and electronic properties of CeO2 at high pressure: First-principles studies

NASA Astrophysics Data System (ADS)

Li, Mei; Jia, Huiling; Li, Xueyan; Liu, Xuejie

2016-01-01

The elastic constants (Cij), bulk modulus (B), shear modulus (G) and elastic modulus (E) of cubic fluorite CeO2 under high pressure have been studied using the plane-wave pseudopotential method based on density functional theory. The calculated results show that the mechanical properties (Cij, B, G and E) of CeO2 increase with increasing pressure, and the phase transition of CeO2 occurs beyond the pressure of 130 GPa. From the calculated phonon spectrum using Parlinsk-Li-Kawasoe method, we found that CeO2 appears imaginary frequency at 140 GPa, which indicates phase transition. The energy band, density of states and charge density of CeO2 under high pressure are calculated using GGA+U method. It is found that the high pressure makes the electron delocalization and Ce-O covalent bonding enhanced. As pressure increases, the band gap between O2p and Ce4f states near the Fermi level increases, and CeO2 nonmetallic nature promotes. The present research results in a better understanding of how CeO2 responds to compression.

Formation of qualified BaHfO3 doped Y0.5Gd0.5Ba2Cu3O7-δ film on CeO2 buffered IBAD-MgO tape by self-seeding pulsed laser deposition

NASA Astrophysics Data System (ADS)

Liu, Linfei; Wang, Wei; Yao, Yanjie; Wu, Xiang; Lu, Saidan; Li, Yijie

2018-05-01

Improvement in the in-filed transport properties of REBa2Cu3O7-δ (RE = rare earth elements, REBCO) coated conductor is needed to meet the performance requirements for various practical applications, which can be accomplished by introducing artificial pinning centers (APCs), such as second phase dopant. However, with increasing dopant level the critical current density Jc at 77 K in zero applied magnetic field decreases. In this paper, in order to improve Jc we propose a seed layer technique. 5 mol% BaHfO3 (BHO) doped Y0.5Gd0.5Ba2Cu3O7-δ (YGBCO) epilayer with an inserted seed layer was grown on CeO2 buffered ion beam assisted deposition MgO (IBAD-MgO) tape by pulsed laser deposition. The effect of the conditions employed to prepare the seed layer, including tape moving speed and chemical composition, on the quality of 5 mol% BHO doped YGBCO epilayer was systematically investigated by X-ray diffraction (XRD) measurements and scanning electron microscopy (SEM) observations. It was found that all the samples with seed layer have higher Jc (77 K, self-field) than the 5 mol% BHO doped YGBCO film without seed layer. The seed layer could inhibit deterioration of the Jc at 77 K and self-filed. Especially, the self-seed layer (5 mol% BHO doped YGBCO seed layer) was more effective in improving the crystal quality, surface morphology and superconducting performance. At 4.2 K, the 5 mol% BHO doped YGBCO film with 4 nm thick self-seed layer had a very high flux pinning force density Fp of 860 GN/m3 for B//c under a 9 T field, and more importantly, the peak of the Fp curve was not observed.

Effects of SiO 2 overlayer at initial growth stage of epitaxial Y 2O 3 film growth

NASA Astrophysics Data System (ADS)

Cho, M.-H.; Ko, D.-H.; Choi, Y. G.; Lyo, I. W.; Jeong, K.; Whang, C. N.

2000-12-01

We investigated the dependence of the Y 2O 3 film growth on Si surface at initial growth stage. The reflection high-energy electron diffraction, X-ray scattering, and atomic force microscopy showed that the film crystallinity and morphology strongly depended on whether Si surface contained O or not. In particular, the films grown on oxidized surfaces revealed significant improvement in crystallinity and surface smoothness. A well-ordered atomic structure of Y 2O 3 film was formed on 1.5 nm thick SiO 2 layer with the surface and interfacial roughness markedly enhanced, compared with the film grown on the clean Si surfaces. The epitaxial film on the oxidized Si surface exhibited extremely small mosaic structures at interface, while the film on the clean Si surface displayed an island-like growth with large mosaic structures. The nucleation sites for Y 2O 3 were provided by the reaction between SiO 2 and Y at the initial growth stage. The SiO 2 layer known to hinder crystal growth is found to enhance the nucleation of Y 2O 3, and provides a stable buffer layer against the silicide formation. Thus, the formation of the initial SiO 2 layer is the key to the high-quality epitaxial growth of Y 2O 3 on Si.

GaN growth via HVPE on SiC/Si substrates: growth mechanisms

NASA Astrophysics Data System (ADS)

Sharofidinov, Sh Sh; Redkov, A. V.; Osipov, A. V.; Kukushkin, S. A.

2017-11-01

The article focuses on the study of GaN thin film growth via chloride epitaxy on SiC/Si hybrid substrate. SiC buffer layer was grown by a method of substitution of atoms, which allows one to reduce impact of mechanical stress therein on subsequent growth of III-nitride films. It is shown, that change in GaN growth conditions leads to change in its growth mechanism. Three mechanisms: epitaxial, spiral and stepwise growth are considered and mechanical stresses are estimated via Raman spectroscopy.

Design of optimal buffer layers for CuInGaSe2 thin-film solar cells(Conference Presentation)

NASA Astrophysics Data System (ADS)

Lordi, Vincenzo; Varley, Joel B.; He, Xiaoqing; Rockett, Angus A.; Bailey, Jeff; Zapalac, Geordie H.; Mackie, Neil; Poplavskyy, Dmitry; Bayman, Atiye

2016-09-01

Optimizing the buffer layer in manufactured thin-film PV is essential to maximize device efficiency. Here, we describe a combined synthesis, characterization, and theory effort to design optimal buffers based on the (Cd,Zn)(O,S) alloy system for CIGS devices. Optimization of buffer composition and absorber/buffer interface properties in light of several competing requirements for maximum device efficiency were performed, along with process variations to control the film and interface quality. The most relevant buffer properties controlling performance include band gap, conduction band offset with absorber, dopability, interface quality, and film crystallinity. Control of an all-PVD deposition process enabled variation of buffer composition, crystallinity, doping, and quality of the absorber/buffer interface. Analytical electron microscopy was used to characterize the film composition and morphology, while hybrid density functional theory was used to predict optimal compositions and growth parameters based on computed material properties. Process variations were developed to produce layers with controlled crystallinity, varying from amorphous to fully epitaxial, depending primarily on oxygen content. Elemental intermixing between buffer and absorber, particularly involving Cd and Cu, also is controlled and significantly affects device performance. Secondary phase formation at the interface is observed for some conditions and may be detrimental depending on the morphology. Theoretical calculations suggest optimal composition ranges for the buffer based on a suite of computed properties and drive process optimizations connected with observed film properties. Prepared by LLNL under Contract DE-AC52-07NA27344.

Fully epitaxial C1b-type NiMnSb half-Heusler alloy films for current-perpendicular-to-plane giant magnetoresistance devices with a Ag spacer

PubMed Central

Wen, Zhenchao; Kubota, Takahide; Yamamoto, Tatsuya; Takanashi, Koki

2015-01-01

Remarkable magnetic and spin-dependent transport properties arise from well-designed spintronic materials and heterostructures. Half-metallic Heusler alloys with high spin polarization exhibit properties that are particularly advantageous for the development of high-performance spintronic devices. Here, we report fully (001)-epitaxial growth of a high-quality half-metallic NiMnSb half-Heusler alloy films, and their application to current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices with Ag spacer layers. Fully (001)-oriented NiMnSb epitaxial films with very flat surface and high magnetization were prepared on Cr/Ag-buffered MgO(001) single crystalline substrates by changing the substrate temperature. Epitaxial CPP-GMR devices using the NiMnSb films and a Ag spacer were fabricated, and room-temperature (RT) CPP-GMR ratios for the C1b-type half-Heusler alloy were determined for the first time. A CPP-GMR ratio of 8% (21%) at RT (4.2 K) was achieved in the fully epitaxial NiMnSb/Ag/NiMnSb structures. Furthermore, negative anisotropic magnetoresistance (AMR) ratio and small discrepancy of the AMR amplitudes between RT and 10 K were observed in a single epitaxial NiMnSb film, indicating robust bulk half metallicity against thermal fluctuation in the half-Heusler compound. The modest CPP-GMR ratios could be attributed to interface effects between NiMnSb and Ag. This work provides a pathway for engineering a new class of ordered alloy materials with particular emphasis on spintronics. PMID:26672482

Enhanced Colloidal Stability of CeO2 Nanoparticles by Ferrous Ions: Adsorption, Redox Reaction, and Surface Precipitation.

PubMed

Liu, Xuyang; Ray, Jessica R; Neil, Chelsea W; Li, Qingyun; Jun, Young-Shin

2015-05-05

Due to the toxicity of cerium oxide (CeO2) nanoparticles (NPs), a better understanding of the redox reaction-induced surface property changes of CeO2 NPs and their transport in natural and engineered aqueous systems is needed. This study investigates the impact of redox reactions with ferrous ions (Fe2+) on the colloidal stability of CeO2 NPs. We demonstrated that under anaerobic conditions, suspended CeO2 NPs in a 3 mM FeCl2 solution at pH 4.8 were much more stable against sedimentation than those in the absence of Fe2+. Redox reactions between CeO2 NPs and Fe2+ lead to the formation of 6-line ferrihydrite on the CeO2 surfaces, which enhanced the colloidal stability by increasing the zeta potential and hydrophilicity of CeO2 NPs. These redox reactions can affect the toxicity of CeO2 NPs by increasing cerium dissolution, and by creating new Fe(III) (hydr)oxide reactive surface layers. Thus, these findings have significant implications for elucidating the phase transformation and transport of redox reactive NPs in the environment.

Effect of InSb/In0.9Al0.1Sb superlattice buffer layer on the structural and electronic properties of InSb films

NASA Astrophysics Data System (ADS)

Zhao, Xiaomeng; Zhang, Yang; Guan, Min; Cui, Lijie; Wang, Baoqiang; Zhu, Zhanping; Zeng, Yiping

2017-07-01

The effect of InSb/In0.9Al0.1Sb buffer layers on InSb thin films grown on GaAs (0 0 1) substrate by molecular beam epitaxy (MBE) is investigated. The crystal quality and the surface morphology of InSb are characterized by XRD and AFM. The carrier transport property is researched through variable temperature hall test. The sharp interface between InSb/In0.9Al0.1Sb is demonstrated important for the high quality InSb thin film. We try different superlattice buffer layers by changing ratios, 2-0.5, thickness, 300-450 nm, and periods, 20-50. According to the function of the dislocation density to the absolute temperature below 150 K with different periods of SL buffers, we can find that the number of periods of superlattice is a major factor to decrease the density of threading dislocations. With the 50 periods SL buffer layer, the electron mobility of InSb at the room temperature and liquid nitrogen cooling temperature is ∼63,000 and ∼4600 cm2/V s, respectively. We deduce that the interface in the SL structure works as a filter layer to prevent the dislocation propagating to the upper InSb thin films.

Polarization-Dependent Raman Spectroscopy of Epitaxial TiO 2 (B) Thin Films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jokisaari, Jacob R.; Bayerl, Dylan; Zhang, Kui

2015-12-08

The bronze polymorph of titanium dioxide, known as TiO 2(B), has promising photochemical and electronic properties for potential applications in Li-ion batteries, photocatalysis, chemical sensing, and solar cells. In contrast to previous studies performed with powder samples, which often suffer from impurities and lattice water, here we report Raman spectra from highly crystalline TiO 2(B) films epitaxially grown on Si substrates with a thin SrTiO 3 buffer layer. The reduced background from the Si substrate significantly benefits acquisition of polarization-dependent Raman spectra collected from the high-quality thin films, which are compared to nanopowder results reported in the literature. The experimentalmore » spectra were compared with density functional theory calculations to analyze the atomic displacements associated with each Raman-active vibrational mode. These results provide a standard reference for further investigation of the crystallinity, structure, composition, and properties of TiO 2(B) materials with Raman spectroscopy.« less

The early growth and interface of YBa 2Cu 3O y thin films deposited on YSZ substrates

NASA Astrophysics Data System (ADS)

Gao, J.; Tang, W. H.; Yau, C. Y.

2001-11-01

Epitaxial thin films of YBa 2Cu 3O y (YBCO) have been prepared on yttrium-stabilized zirconia substrates with and without a buffer layer. The early growth, crystallinity and surface morphology of these thin films have been characterized by X-ray diffraction, rocking curves, scanning electron microscope, in situ conductance measurements, and surface step profiler. The full width at half maximum of the ( 0 0 5 ) peak of rocking curve was found to be less than 0.1°. Over a wide scanning range of 2000 μm the average surface roughness is just 5 nm, indicating very smooth films. Grazing incident X-ray reflection and positron annihilation spectroscopy shows well-defined interfaces between layers and substrate. By applying a new Eu 2CuO 4 (ECO) buffer layer the initial formation of YBCO appears to grow layer-by-layer rather than the typical island growth mode. The obtained results reveal significant improvements at the early formation and crystallinity of YBCO by using the 214-T ‧ ECO as a buffer layer.

Experimental observation of motion of edge dislocations in Ge/Ge{sub x}Si{sub 1–x}/Si(001) (x = 0.2–0.6) heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bolkhovityanov, Yu. B., E-mail: bolkhov@isp.nsc.ru; Gutakovskii, A. K.; Deryabin, A. S.

2016-11-15

The Ge/Ge{sub x}Si{sub 1–x}/Si(001) (x = 0.2–0.6) heterostructures grown by the molecular epitaxy method are analyzed using high-resolution electron microscopy with atomic resolution. The thickness of the Ge{sub x}Si{sub 1–x} buffer layer is 7–35 nm. It is shown that such heterostructures relax in two stages: an ordered network of edge dislocations is formed during their growth (500°C) at the Ge/GeSi interface and then, contrary to the generally accepted opinion concerning their immobility, some of the edge dislocations move through the buffer GeSi layer to the GeSi/Si(001) interface during annealing at higher temperatures and x > 0.3. It is found thatmore » plastic relaxation of the GeSi buffer layer occurs due to motion of dislocation complexes of the edge type, consisting of a pair of complementary 60° dislocations with the ends of (111) extra planes located approximately at a distance from 2 to 12 interplanar spacings. It is shown that the penetration of dislocation complexes into the GeSi buffer layer and further to the GeSi/Si interface is intensified with increasing annealing temperature (600–800°C) and the fraction of Ge in the buffer layer.« less

Effects of amorphous silica coating on cerium oxide nanoparticles induced pulmonary responses.

PubMed

Ma, Jane; Mercer, Robert R; Barger, Mark; Schwegler-Berry, Diane; Cohen, Joel M; Demokritou, Philip; Castranova, Vincent

2015-10-01

Recently cerium compounds have been used in a variety of consumer products, including diesel fuel additives, to increase fuel combustion efficiency and decrease diesel soot emissions. However, cerium oxide (CeO2) nanoparticles have been detected in the exhaust, which raises a health concern. Previous studies have shown that exposure of rats to nanoscale CeO2 by intratracheal instillation (IT) induces sustained pulmonary inflammation and fibrosis. In the present study, male Sprague-Dawley rats were exposed to CeO2 or CeO2 coated with a nano layer of amorphous SiO2 (aSiO2/CeO2) by a single IT and sacrificed at various times post-exposure to assess potential protective effects of the aSiO2 coating. The first acellular bronchoalveolar lavage (BAL) fluid and BAL cells were collected and analyzed from all exposed animals. At the low dose (0.15mg/kg), CeO2 but not aSiO2/CeO2 exposure induced inflammation. However, at the higher doses, both particles induced a dose-related inflammation, cytotoxicity, inflammatory cytokines, matrix metalloproteinase (MMP)-9, and tissue inhibitor of MMP at 1day post-exposure. Morphological analysis of lung showed an increased inflammation, surfactant and collagen fibers after CeO2 (high dose at 3.5mg/kg) treatment at 28days post-exposure. aSiO2 coating significantly reduced CeO2-induced inflammatory responses in the airspace and appeared to attenuate phospholipidosis and fibrosis. Energy dispersive X-ray spectroscopy analysis showed Ce and phosphorous (P) in all particle-exposed lungs, whereas Si was only detected in aSiO2/CeO2-exposed lungs up to 3days after exposure, suggesting that aSiO2 dissolved off the CeO2 core, and some of the CeO2 was transformed to CePO4 with time. These results demonstrate that aSiO2 coating reduce CeO2-induced inflammation, phospholipidosis and fibrosis. Published by Elsevier Inc.

Fundamental Understanding of the Interaction of Acid Gases with CeO 2 : From Surface Science to Practical Catalysis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tumuluri, Uma; Rother, Gernot; Wu, Zili

Acid gases including CO 2, SO 2, and NO x are ubiquitous in large-scale energy applications including heterogeneous catalysis. The adverse environmental and health effects of these acid gases have resulted in high interest in the research and development of technologies to remove or convert these acid gases. The main challenge for the development of these technologies is to develop catalysts that are highly efficient, stable, and cost-effective, and many catalysts have been reported in this regard. CeO 2 and CeO 2-based catalysts have gained prominence in the removal and conversion of CO 2, SO 2, and NO x becausemore » of their structural robustness and redox and acid–base properties. In this article, we provide a brief overview of the application of CeO 2 and CeO 2-based catalysts for the removal of CO 2, SO 2, and NO x gases with an emphasis on the fundamental understanding of the interactions of these acid gases with CeO 2. The studies summarized in this review range from surface science using single crystals and thin films with precise crystallographic planes to practical catalysis applications of nanocrystalline and polycrystalline CeO 2 materials with defects and dopants. After an introduction to the properties of CeO 2 surfaces, their catalytic properties for conversions of different acid gases are reviewed and discussed. Lastly, we find that the surface atomic structure, oxygen vacancies, and surface acid–base properties of CeO 2 play vital roles in the surface chemistry and structure evolution during the interactions of acid gases with CeO 2 and CeO 2-based catalysts.« less

Fundamental Understanding of the Interaction of Acid Gases with CeO 2 : From Surface Science to Practical Catalysis

DOE PAGES

Tumuluri, Uma; Rother, Gernot; Wu, Zili

2016-03-21

Acid gases including CO 2, SO 2, and NO x are ubiquitous in large-scale energy applications including heterogeneous catalysis. The adverse environmental and health effects of these acid gases have resulted in high interest in the research and development of technologies to remove or convert these acid gases. The main challenge for the development of these technologies is to develop catalysts that are highly efficient, stable, and cost-effective, and many catalysts have been reported in this regard. CeO 2 and CeO 2-based catalysts have gained prominence in the removal and conversion of CO 2, SO 2, and NO x becausemore » of their structural robustness and redox and acid–base properties. In this article, we provide a brief overview of the application of CeO 2 and CeO 2-based catalysts for the removal of CO 2, SO 2, and NO x gases with an emphasis on the fundamental understanding of the interactions of these acid gases with CeO 2. The studies summarized in this review range from surface science using single crystals and thin films with precise crystallographic planes to practical catalysis applications of nanocrystalline and polycrystalline CeO 2 materials with defects and dopants. After an introduction to the properties of CeO 2 surfaces, their catalytic properties for conversions of different acid gases are reviewed and discussed. Lastly, we find that the surface atomic structure, oxygen vacancies, and surface acid–base properties of CeO 2 play vital roles in the surface chemistry and structure evolution during the interactions of acid gases with CeO 2 and CeO 2-based catalysts.« less

Study on GaN buffer leakage current in AlGaN/GaN high electron mobility transistor structures grown by ammonia-molecular beam epitaxy on 100-mm Si(111)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ravikiran, L.; Radhakrishnan, K., E-mail: ERADHA@e.ntu.edu.sg; Ng, G. I.

2015-06-28

The effect of carbon doping on the structural and electrical properties of GaN buffer layer of AlGaN/GaN high electron mobility transistor (HEMT) structures has been studied. In the undoped HEMT structures, oxygen was identified as the dominant impurity using secondary ion mass spectroscopy and photoluminescence (PL) measurements. In addition, a notable parallel conduction channel was identified in the GaN buffer at the interface. The AlGaN/GaN HEMT structures with carbon doped GaN buffer using a CBr{sub 4} beam equivalent pressure of 1.86 × 10{sup −7} mTorr showed a reduction in the buffer leakage current by two orders of magnitude. Carbon doped GaN buffersmore » also exhibited a slight increase in the crystalline tilt with some pits on the growth surface. PL and Raman measurements indicated only a partial compensation of donor states with carbon acceptors. However, AlGaN/GaN HEMT structures with carbon doped GaN buffer with 200 nm thick undoped GaN near the channel exhibited good 2DEG characteristics.« less

Single-crystal-like, c-axis oriented BaTiO3 thin films with high-performance on flexible metal templates for ferroelectric applications

NASA Astrophysics Data System (ADS)

Shin, Junsoo; Goyal, Amit; Jesse, Stephen; Kim, Dae Ho

2009-06-01

Epitaxial, c-axis oriented BaTiO3 thin films were deposited using pulsed laser ablation on flexible, polycrystalline Ni alloy tape with biaxially textured oxide buffer multilayers. The high quality of epitaxial BaTiO3 thin films with P4mm group symmetry was confirmed by x-ray diffraction. The microscopic ferroelectric domain structure and the piezoelectric domain switching in these films were confirmed via spatially resolved piezoresponse mapping and local hysteresis loops. Macroscopic measurements demonstrate that the films have well-saturated hysteresis loops with a high remanent polarization of ˜11.5 μC/cm2. Such high-quality, single-crystal-like BaTiO3 films on low-cost, polycrystalline, flexible Ni alloy substrates are attractive for applications in flexible lead-free ferroelectric devices.

Analyses of (1-chloroethenyl)oxirane headspace and hemoglobin N-valine adducts in erythrocytes indicate selective detoxification of (1-chloroethenyl)oxirane enantiomers.

PubMed

Hurst, Harrell E; Ali, Md Yeakub

2007-03-20

Chloroprene (2-chloro-1,3-butadiene, CAS 126-99-8, CP) is a colorless volatile liquid used in manufacture of polychloroprene, a synthetic rubber polymer. National Toxicology Program inhalation studies of CP in rats and mice gave clear evidence of carcinogenic activity. CP is metabolized by CYP2E1 to electrophilic epoxides, including R- and S-(1-chloroethenyl)oxirane (CEO), which form adducts with nucleic acids and other nucleophiles including glutathione and hemoglobin. As detection of these epoxide metabolites in vivo is technically challenging, measurements of CEO-Hb adducts may provide biomarkers of exposure to bioactivated metabolites of CP. The present studies involved exposure of C57BL/6 mouse erythrocytes (RBC) in vitro to pure enantiomers of CEO. Headspace analysis of CEO using Cyclodex-B capillary GC/MS with selected ion monitoring enabled separation, specific detection, and quantification of CEO enantiomers as reactions proceeded in vitro with RBC. These analyses indicated that R-CEO was much more persistent when incubated in vitro with RBC, while S-CEO disappeared rapidly. After periods of exposure of RBC to various concentrations of R- or S-CEO, erythrocytes were lysed and globin isolated. Covalent adducts, formed by reaction of CEO with N-terminal valine in Hb, were analyzed following Edman cleavage and trimethylsilylation. SIM-GC/MS analyses using a 5%-phenyl-dimethylsiloxane capillary column enabled quantification of CEO-Hb adducts. These analyses produced two chromatographic peaks of CEO-valine adduct derivatives, which were tentatively identified from mass spectra, reaction, and abundance data to be 1-(3-chloro-2-trimethylsilyloxybut-3-en-1-yl)-5-isopropyl-3-phenyl-2-thiohydantoin and 1-[2-chloro-1-(trimethylsilyloxymethyl)prop-2-en-1-yl]-5-isopropyl-3-phenyl-2-thiohydantoin. Analyses quantified significantly greater levels of adducts formed from R-CEO than from S-CEO. Studies involving pretreatment of RBC with glutathione-depleting diethyl maleate diminished the selective detoxification of S-CEO, and suggest enantiomeric selectivity of mouse glutathione-S-transferase as a mechanism of differential detoxification of CEO enantiomers. These results indicate more rapid detoxification of S-CEO by mouse RBC in vitro, while R-CEO may persist to react with cellular nucleophiles.

Environmentally friendly synthesis of CeO2 nanoparticles for the catalytic oxidation of benzyl alcohol to benzaldehyde and selective detection of nitrite

NASA Astrophysics Data System (ADS)

Tamizhdurai, P.; Sakthinathan, Subramanian; Chen, Shen-Ming; Shanthi, K.; Sivasanker, S.; Sangeetha, P.

2017-04-01

Cerium oxide nanoparticles (CeO2 NPs) are favorable in nanotechnology based on some remarkable properties. In this study, the crystalline CeO2 NPs are successfully prepared by an efficient microwave combustion (MCM) and conventional route sol-gel (CRSGM) methods. The structural morphology of the as-prepared CeO2 NPs was investigated by various spectroscopic and analytical techniques. Moreover, the XRD pattern confirmed the formation of CeO2 NPs as a face centered cubic structure. The magnetometer studies indicated the low saturation magnetization (23.96 emu/g) of CeO2 NPs for weak paramagnetic and high saturation magnetization (32.13 emu/g) of CeO2 NPs for super paramagnetic. After that, the oxidation effect of benzyl alcohol was investigated which reveals good conversion and selectivity. Besides, the CeO2 NPs modified glassy carbon electrode (GCE) used for the detection of nitrite with linear concentration range (0.02-1200 μM), low limit of detection (0.21 μM) and higher sensitivity (1.7238 μAμM-1 cm-2). However, the CeO2 NPs modified electrode has the fast response, high sensitivity and good selectivity. In addition, the fabricated electrode is applied for the determination of nitrite in various water samples. Eventually, the CeO2 NPs can be regarded as an effective way to enhance the catalytic activity towards the benzyl alcohol and nitrite.

Environmentally friendly synthesis of CeO2 nanoparticles for the catalytic oxidation of benzyl alcohol to benzaldehyde and selective detection of nitrite

PubMed Central

Tamizhdurai, P.; Sakthinathan, Subramanian; Chen, Shen-Ming; Shanthi, K.; Sivasanker, S.; Sangeetha, P.

2017-01-01

Cerium oxide nanoparticles (CeO2 NPs) are favorable in nanotechnology based on some remarkable properties. In this study, the crystalline CeO2 NPs are successfully prepared by an efficient microwave combustion (MCM) and conventional route sol-gel (CRSGM) methods. The structural morphology of the as-prepared CeO2 NPs was investigated by various spectroscopic and analytical techniques. Moreover, the XRD pattern confirmed the formation of CeO2 NPs as a face centered cubic structure. The magnetometer studies indicated the low saturation magnetization (23.96 emu/g) of CeO2 NPs for weak paramagnetic and high saturation magnetization (32.13 emu/g) of CeO2 NPs for super paramagnetic. After that, the oxidation effect of benzyl alcohol was investigated which reveals good conversion and selectivity. Besides, the CeO2 NPs modified glassy carbon electrode (GCE) used for the detection of nitrite with linear concentration range (0.02–1200 μM), low limit of detection (0.21 μM) and higher sensitivity (1.7238 μAμM−1 cm−2). However, the CeO2 NPs modified electrode has the fast response, high sensitivity and good selectivity. In addition, the fabricated electrode is applied for the determination of nitrite in various water samples. Eventually, the CeO2 NPs can be regarded as an effective way to enhance the catalytic activity towards the benzyl alcohol and nitrite. PMID:28406231

In-plane InSb nanowires grown by selective area molecular beam epitaxy on semi-insulating substrate.

PubMed

Desplanque, L; Bucamp, A; Troadec, D; Patriarche, G; Wallart, X

2018-07-27

In-plane InSb nanostructures are grown on a semi-insulating GaAs substrate using an AlGaSb buffer layer covered with a patterned SiO 2 mask and selective area molecular beam epitaxy. The shape of these nanostructures is defined by the aperture in the silicon dioxide layer used as a selective mask thanks to the use of an atomic hydrogen flux during the growth. Transmission electron microscopy reveals that the mismatch accommodation between InSb and GaAs is obtained in two steps via the formation of an array of misfit dislocations both at the AlGaSb buffer layer/GaAs and at the InSb nanostructures/AlGaSb interfaces. Several micron long in-plane nanowires (NWs) can be achieved as well as more complex nanostructures such as branched NWs. The electrical properties of the material are investigated by the characterization of an InSb NW MOSFET down to 77 K. The resulting room temperature field effect mobility values are comparable with those reported on back-gated MOSFETs based on InSb NWs obtained by vapor liquid solid growth or electrodeposition. This growth method paves the way to the fabrication of complex InSb-based nanostructures.

RBS/Channeling Studies of Swift Heavy Ion Irradiated GaN Layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sathish, N.; Dhamodaran, S.; Pathak, A. P.

2009-03-10

Epitaxial GaN layers grown by MOCVD on c-plane sapphire substrates were irradiated with 150 MeV Ag ions at a fluence of 5x10{sup 12} ions/cm{sup 2}. Samples used in this study are 2 {mu}m thick GaN layers, with and without a thin AlN cap-layer. Energy dependent RBS/Channeling measurements have been carried out on both irradiated and unirradiated samples for defects characterization. Observed results are compared and correlated with previous HRXRD, AFM and optical studies. The {chi}{sub min} values for unirradiated samples show very high value and the calculated defect densities are of the order of 10{sup 10} cm{sup -2} as expectedmore » in these samples. Effects of irradiation on these samples are different as initial samples had different defect densities. Epitaxial reconstruction of GaN buffer layer has been attributed to the observed changes, which are generally grown to reduce the strain between GaN and Sapphire.« less

Exceptional capability of nanosized CeO(2) materials to "dissolve" lanthanide oxides established by time-gated excitation and emission spectroscopy.

PubMed

Tiseanu, Carmen; Parvulescu, Vasile; Avram, Daniel; Cojocaru, Bogdan; Sanchez-Dominguez, Margarita

2014-05-28

The atomic scale homogeneity of Ce and Zr oxygen bonds represents the main reason for enhanced total oxygen storage capability of CeO2-ZrO2 (Ce/Zr = 1) as compared to that of CeO2. Here, we demonstrate that the addition of 10% Eu(3+) by wet impregnation on preformed nanosized CeO2-ZrO2 (Ce/Zr = 1) followed by calcination induces a remarkable homogeneity of 10% Eu(3+)-CeO2-ZrO2 solid solution. By use of time-resolved emission and excitation spectroscopies, the improvement of the nanoscale chemical and structural homogeneity of 10% Eu(3+)-CeO2-ZrO2 calcined at 1000 as compared to sample calcined at 750 °C is demonstrated. Based on the comparison of luminescence properties of 10% Eu(3+) impregnated on preformed nanosized CeO2-ZrO2 and CeO2, we also show that the presence of zirconium does not only preserve the ability of cerium oxide to "dissolve" lanthanide oxide, but also determines an important stabilization of defects (oxygen vacancies) generated upon Eu(3+) doping.

Buffer layers on rolled nickel or copper as superconductor substrates

DOEpatents

Paranthaman, Mariappan; Lee, Dominic F.; Kroeger, Donald M.; Goyal, Amit

2000-01-01

Buffer layer architectures are epitaxially deposited on biaxially-textured rolled substrates of nickel and/or copper and their alloys for high current conductors, and more particularly buffer layer architectures such as Y.sub.2 O.sub.3 /Ni, YSZ/Y.sub.2 O.sub.3 /Ni, Yb.sub.2 O.sub.3 /Ni, Yb.sub.2 O.sub.3 /Y.sub.2 O.sub.3 /Ni, Yb.sub.2 O.sub.3 /CeO.sub.2 /Ni, RE.sub.2 O.sub.3 /Ni (RE=Rare Earth), and Yb.sub.2 O.sub.3 /YSZ/CeO.sub.2 /Ni, Y.sub.2 O.sub.3 /Cu, YSZ/Y.sub.2 O.sub.3 /Cu, Yb.sub.2 O.sub.3 /Cu, Yb.sub.2 O.sub.3 /Y.sub.2 O.sub.3 /Cu, Yb.sub.2 O.sub.3 /CeO.sub.2 /Cu, RE.sub.2 O.sub.3 /Cu, and Yb.sub.2 O.sub.3 /YSZ/CeO.sub.2 /Cu. Deposition methods include physical vapor deposition techniques which include electron-beam evaporation, rf magnetron sputtering, pulsed laser deposition, thermal evaporation, and solution precursor approach, which includes chemical vapor deposition, combustion CVD, metal-organic decomposition, sol-gel processing, and plasma spray.

Strain relaxation in convex-graded InxAl1-xAs (x = 0.05-0.79) metamorphic buffer layers grown by molecular beam epitaxy on GaAs(001)

NASA Astrophysics Data System (ADS)

Solov'ev, V. A.; Chernov, M. Yu; Baidakova, M. V.; Kirilenko, D. A.; Yagovkina, M. A.; Sitnikova, A. A.; Komissarova, T. A.; Kop'ev, P. S.; Ivanov, S. V.

2018-01-01

This paper presents a study of structural properties of InGaAs/InAlAs quantum well (QW) heterostructures with convex-graded InxAl1-xAs (x = 0.05-0.79) metamorphic buffer layers (MBLs) grown by molecular beam epitaxy on GaAs substrates. Mechanisms of elastic strain relaxation in the convex-graded MBLs were studied by the X-ray reciprocal space mapping combined with the data of spatially-resolved selected area electron diffraction implemented in a transmission electron microscope. The strain relaxation degree was approximated for the structures with different values of an In step-back. Strong contribution of the strain relaxation via lattice tilt in addition to the formation of the misfit dislocations has been observed for the convex-graded InAlAs MBL, which results in a reduced threading dislocation density in the QW region as compared to a linear-graded MBL.

Oxygen Effect on the Properties of Epitaxial (110) La0.7Sr0.3MnO3 by Defect Engineering.

PubMed

Rasic, Daniel; Sachan, Ritesh; Temizer, Namik K; Prater, John; Narayan, Jagdish

2018-06-20

The multiferroic properties of mixed valence perovskites such as lanthanum strontium manganese oxide (La 0.7 Sr 0.3 MnO 3 ) (LSMO) demonstrate a unique dependence on oxygen concentration, thickness, strain, and orientation. To better understand the role of each variable, a systematic study has been performed. In this study, epitaxial growth of LSMO (110) thin films with thicknesses ∼15 nm are reported on epitaxial magnesium oxide (111) buffered Al 2 O 3 (0001) substrates. Four LSMO films with changing oxygen concentration have been investigated. The oxygen content in the films was controlled by varying the oxygen partial pressure from 1 × 10 -4 to 1 × 10 -1 Torr during deposition and subsequent cooldown. X-ray diffraction established the out-of-plane and in-plane plane matching to be (111) MgO ∥ (0001) Al 2 O 3 and ⟨11̅0⟩ MgO ∥ ⟨101̅0⟩ Al 2 O 3 for the buffer layer with the substrate, and an out-of-plane lattice matching of (110) LSMO ∥ (111) MgO for the LSMO layer. For the case of the LSMO growth on MgO, a novel growth mode has been demonstrated, showing that three in-plane matching variants are present: (i) ⟨11̅0⟩ LSMO ∥ ⟨11̅0⟩ MgO , (ii) ⟨11̅0⟩ LSMO ∥ ⟨101̅⟩ MgO , and (iii) ⟨11̅0⟩ LSMO ∥ ⟨01̅1⟩ MgO . The atomic resolution scanning transmission electron microscopy (STEM) images were taken of the interfaces that showed a thin, ∼2 monolayer intermixed phase while high-angle annular dark field (HAADF) cross-section images revealed 4/5 plane matching between the film and the buffer and similar domain sizes between different samples. Magnetic properties were measured for all films and the gradual decrease in saturation magnetization is reported with decreasing oxygen partial pressure during growth. A systematic increase in the interplanar spacing was observed by X-ray diffraction of the films with lower oxygen concentration, indicating the decrease in the lattice constant in the plane due to the point defects. Samples demonstrated an insulating behavior for samples grown under low oxygen partial pressure and semiconducting behavior for the highest oxygen partial pressures. Magnetotransport measurements showed ∼36.2% decrease in electrical resistivity with an applied magnetic field of 10 T at 50 K and ∼1.3% at room temperature for the highly oxygenated sample.

Comparative analysis of strain fields in layers of step-graded metamorphic buffers of various designs

NASA Astrophysics Data System (ADS)

Aleshin, A. N.; Bugaev, A. S.; Ruban, O. A.; Tabachkova, N. Yu.; Shchetinin, I. V.

2017-10-01

Spatial distribution of residual elastic strain in the layers of two step-graded metamophic buffers of various designs, grown by molecular beam epitaxy from ternary InxAl1-xAs solutions on GaAs(001) substrates, is obtained using reciprocal space mapping by three-axis X-ray diffractometry and the linear theory of elasticity. The difference in the design of the buffers enabled the formation of a dislocation-free layer with different thickness in each of the heterostructures, which was the main basis of this study. It is shown that, in spite of the different design of graded metamorphic buffers, the nature of strain fields in them is the same, and the residual elastic strains in the final elements of both buffers adjusted for the effect of work hardening subject to the same phenomenological law, which describes the strain relief process in single-layer heterostructures.

Influence of CeO2 addition on the preparation of foamed glass-ceramics from high-titanium blast furnace slag

NASA Astrophysics Data System (ADS)

Zhou, Hong-ling; Feng, Ke-qin; Chen, Chang-hong; Yan, Zi-di

2018-06-01

Foamed glass-ceramics doped with cerium oxide (CeO2) were successfully prepared from high-titanium blast furnace slag by one-step sintering. The influence of CeO2 addition (1.5wt%-3.5wt%) on the crystalline phases, microstructure, and properties of foamed glass-ceramics was studied. Results show that CeO2 improves the stability of the glass phase and changes the two-dimensional crystallization mechanism into three-dimensional one. XRD analysis indicates the presence of Ca(Mg, Fe)Si2O6 and Ca(Ti, Mg, Al)(Si, Al)2O6 in all sintered samples. Added with CeO2, TiCeO4 precipitates, and crystallinity increases, leading to increased thickness of pore walls and uniform pores. The comprehensive properties of foamed glass-ceramics are better than that of samples without CeO2. In particular, the sample added with a suitable amount of CeO2 (2.5wt%) exhibits bulk density that is similar to and compressive strength (14.9 MPa) that is more than twice of foamed glass-ceramics without CeO2.

Growth and characterization of epitaxially stabilized ceria(001) nanostructures on Ru(0001)

DOE PAGES

Flege, Jan Ingo; Hocker, Jan; Kaemena, Bjorn; ...

2016-05-03

We have studied (001) surface terminated cerium oxide nanoparticles grown on a ruthenium substrate using physical vapor deposition. Their morphology, shape, crystal structure, and chemical state are determined by low-energy electron microscopy and micro-diffraction, scanning probe microscopy, and synchrotron-based X-ray absorption spectroscopy. Square islands are identified as CeO 2 nanocrystals exhibiting a (001) oriented top facet of varying size; they have a height of about 7 to 10 nm and a side length between about 50 and 500 nm, and are terminated with a p(2 × 2) surface reconstruction. Micro-illumination electron diffraction reveals the existence of a coincidence lattice atmore » the interface to the ruthenium substrate. The orientation of the side facets of the rod-like particles is identified as (111); the square particles are most likely of cuboidal shape, exhibiting (100) oriented side facets. Lastly, the square and needle-like islands are predominantly found at step bunches and may be grown exclusively at temperatures exceeding 1000 °C.« less

Gallenene epitaxially grown on Si(1 1 1)

NASA Astrophysics Data System (ADS)

Tao, Min-Long; Tu, Yu-Bing; Sun, Kai; Wang, Ya-Li; Xie, Zheng-Bo; Liu, Lei; Shi, Ming-Xia; Wang, Jun-Zhong

2018-07-01

Gallenene, an analogue of graphene composed of gallium, is epitaxially grown on Si(1 1 1) surface and studied by low temperature scanning tunneling microscopy (LT-STM). The STM images display that the buffer layer has a superstructure with respect to the substrate lattice and the gallenene layer has a hexagonal honeycomb structure. The scanning tunneling spectra (STS) of the gallenene show that it behaves as a metallic layer. First-principles calculations give the proposed configuration. Our results provide a method to synthesize the gallenene and shed important light on the growth mechanism of it.

Characterization and growth of epitaxial layers of Gs exhibiting high resistivity for ionic implantation

NASA Technical Reports Server (NTRS)

1979-01-01

Either classical or low temperature epitaxial growth techniques can be used to control the deposition of buffer layers of GaAs on semiconducting substrates and to obtain the resistivity and purity desired. Techniques developed to study, as a function of thickness, the evolution of mobilities by photoHall, and the spectroscopy of shallow and deep centers by cathodoluminescence and current transients reveal one very pure layer of medium resistivity and high mobility, and another "dead layer" of elevated resistivity far from the surface. The highly resistive layer remains pure over several microns, which appears interesting for implantation.

Effect of cerium oxide doping on the performance of CaO-based sorbents during calcium looping cycles.

PubMed

Wang, Shengping; Fan, Shasha; Fan, Lijing; Zhao, Yujun; Ma, Xinbin

2015-04-21

A series of CaO-based sorbents were synthesized through a sol-gel method and doped with different amounts of CeO2. The sorbent with a Ca/Ce molar ratio of 15:1 showed an excellent absorption capacity (0.59 gCO2/g sorbent) and a remarkable cycle durability (up to 18 cycles). The admirable capture performance of CaCe-15 was ascribed to its special morphology formed by the doping of CeO2 and the well-distributed CeO2 particles. The sorbents doped with CeO2 possessed a loose shell-connected cross-linking structure, which was beneficial for the contact between CaO and CO2. CaO and CeO2 were dispersed homogeneously, and the existence of CeO2 also decreased the grain size of CaO. The well-dispersed CeO2, which could act as a barrier, effectively prevented the CaO crystallite from growing and sintering, thus the sorbent exhibited outstanding stability. The doping of CeO2 also improved the carbonation rate of the sorbent, resulting in a high capacity in a short period of time.

Origins of interlayer formation and misfit dislocation displacement in the vicinity of InAs/GaAs quantum dots

DOE Office of Scientific and Technical Information (OSTI.GOV)

Huang, S.; Kim, S. J.; Pan, X. Q.

We have examined the origins of interlayer formation and misfit dislocation (MD) displacement in the vicinity of InAs/GaAs quantum dots (QDs). For QDs formed by the Stranski-Krastanov mode, regularly spaced MDs nucleate at the interface between the QD and the GaAs buffer layer. In the droplet epitaxy case, both In island formation and In-induced “nano-drilling” of the GaAs buffer layer are observed during In deposition. Upon annealing under As flux, the In islands are converted to InAs QDs, with an InGaAs interlayer at the QD/buffer interface. Meanwhile, MDs nucleate at the QD/interlayer interface.

Effect of the Cerium Oxide (CeO2) on the Structural and Electrochemical Properties of the LaNi5Ce Metal Hydride Anode

NASA Astrophysics Data System (ADS)

Utami Hapsari, Ade; Zulfia, Anne; Raharjo, Jarot; Agustanhakri

2017-07-01

One of negative electrode, AB5-type alloy electrodes, have been extensively studied and applied in rechargeable Ni-MH batteries due to their excellent electrochemical characteristics. Some researchers have found that addition of rare earth oxides (La, Ce, Pr, Er, Tm, Yb) to AB5-type alloy (MH) electrode improves battery performance significantly. Cerium Oxide (CeO2) is a light rare earth oxide is widely obtained from the processing of tailings in mining activities. During this time, there is still little data for research applications of cerium oxide for electrode materials. In this paper, the effects of adding CeO2 on the performance metal hydride electrode were investigated. In order to study the effects of CeO2 on the performance of anode material, 1%, 2%, and 3% of weight ratio CeO2 was mixed to LaNi5 as an negative electrode. The powder mixtures were mechanically milled at a speed of rpm 240 for 2 hours using ball mill. The powder mixtures were characterized by X-Ray Diffraction (XRD) and Scanning Electron Microscope (SEM). Electrochemical characteristics were measured using electrochemical impedance spectroscopy (EIS). The powder mixing showed the presence of Ce atom substitution into LaNi5 structures that affect the electrochemical properties of the material. The addition of cerium oxide at LaNi5 increase of the value of impedance. However, the addition of the value of impedance at 1% CeO2 is not significant when compared with the addition of 2% and 3% CeO2 that actually make the electrochemical properties of LaNi5 worst. Although the addition of 1% CeO2 also slightly increases the impedance value of LaNi5, but the addition of 1% CeO2 showed increase the corrosion resistance than without the addition of CeO2 and the addition of 2% and 3% CeO2.

The impact of cerium oxide nanoparticles on the physiology of soybean (Glycine max (L.) Merr.) under different soil moisture conditions.

PubMed

Cao, Zhiming; Rossi, Lorenzo; Stowers, Cheyenne; Zhang, Weilan; Lombardini, Leonardo; Ma, Xingmao

2018-01-01

The ongoing global climate change raises concerns over the decreasing moisture content in agricultural soils. Our research investigated the physiological impact of two types of cerium oxide nanoparticles (CeO 2 NPs) on soybean at different moisture content levels. One CeO 2 NP was positively charged on the surface and the other negatively charged due to the polyvinylpyrrolidone (PVP) coating. The results suggest that the effect of CeO 2 NPs on plant photosynthesis and water use efficiency (WUE) was dependent upon the soil moisture content. Both types of CeO 2 NPs exhibited consistently positive impacts on plant photosynthesis at the moisture content above 70% of field capacity (θ fc ). Similar positive impact of CeO 2 NPs was not observed at 55% θ fc , suggesting that the physiological impact of CeO 2 NPs was dependent upon the soil moisture content. The results also revealed that V Cmax (maximum carboxylation rate) was affected by CeO 2 NPs, indicating that CeO 2 NPs affected the Rubisco activity which governs carbon assimilation in photosynthesis. In conclusion, CeO 2 NPs demonstrated significant impacts on the photosynthesis and WUE of soybeans and such impacts were affected by the soil moisture content. Graphical abstract Soil moisture content affects plant cerium oxide nanoparticle interactions.

Cell uptake, intracellular distribution, fate and reactive oxygen species generation of polymer brush engineered CeO2-x NPs

NASA Astrophysics Data System (ADS)

Qiu, Yuan; Rojas, Elena; Murray, Richard A.; Irigoyen, Joseba; Gregurec, Danijela; Castro-Hartmann, Pablo; Fledderman, Jana; Estrela-Lopis, Irina; Donath, Edwin; Moya, Sergio E.

2015-04-01

Cerium Oxide nanoparticles (CeO2-x NPs) are modified with polymer brushes of negatively charged poly (3-sulfopropylmethacrylate) (PSPM) and positively charged poly (2-(methacryloyloxy)ethyl-trimethylammonium chloride) (PMETAC) by Atom Transfer Radical Polymerisation (ATRP). CeO2-x NPs are fluorescently labelled by covalently attaching Alexa Fluor® 488/Fluorescein isothiocyanate to the NP surface prior to polymerisation. Cell uptake, intracellular distribution and the impact on the generation of intracellular Reactive Oxygen Species (ROS) with respect to CeO2-x NPs are studied by means of Raman Confocal Microscopy (CRM), Transmission Electron Microscopy (TEM) and Inductively Coupled Plasma Mass Spectroscopy (ICP-MS). PSPM and PMETAC coated CeO2-x NPs show slower and less uptake compared to uncoated Brush modified NPs display a higher degree of co-localisation with cell endosomes and lysosomes after 24 h of incubation. They also show higher co-localisation with lipid bodies when compared to unmodified CeO2-x NPs. The brush coating does not prevent CeO2-x NPs from displaying antioxidant properties.Cerium Oxide nanoparticles (CeO2-x NPs) are modified with polymer brushes of negatively charged poly (3-sulfopropylmethacrylate) (PSPM) and positively charged poly (2-(methacryloyloxy)ethyl-trimethylammonium chloride) (PMETAC) by Atom Transfer Radical Polymerisation (ATRP). CeO2-x NPs are fluorescently labelled by covalently attaching Alexa Fluor® 488/Fluorescein isothiocyanate to the NP surface prior to polymerisation. Cell uptake, intracellular distribution and the impact on the generation of intracellular Reactive Oxygen Species (ROS) with respect to CeO2-x NPs are studied by means of Raman Confocal Microscopy (CRM), Transmission Electron Microscopy (TEM) and Inductively Coupled Plasma Mass Spectroscopy (ICP-MS). PSPM and PMETAC coated CeO2-x NPs show slower and less uptake compared to uncoated Brush modified NPs display a higher degree of co-localisation with cell endosomes and lysosomes after 24 h of incubation. They also show higher co-localisation with lipid bodies when compared to unmodified CeO2-x NPs. The brush coating does not prevent CeO2-x NPs from displaying antioxidant properties. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr00884k

Evaluation of in vitro cytotoxicity, biocompatibility, and changes in the expression of apoptosis regulatory proteins induced by cerium oxide nanocrystals

NASA Astrophysics Data System (ADS)

Khan, Shahanavaj; Ansari, Anees A.; Rolfo, Christian; Coelho, Andreia; Abdulla, Maha; Al-Khayal, Khayal; Ahmad, Rehan

2017-12-01

Cerium oxide nanocrystals (CeO2-NCs) exhibit superoxide dismutase and catalase mimetic activities. Based on these catalytic activities, CeO2-NCs have been suggested to have the potential to treat various diseases. The crystalline size of these materials is an important factor that influences the performance of CeO2-NCs. Previous reports have shown that several metal-based nanocrystals, including CeO2-NCs, can induce cytotoxicity in cancer cells. However, the underlying mechanisms have remained unclear. To characterize the anticancer activities of CeO2-NCs, several assays related to the mechanism of cytotoxicity and induction of apoptosis has been performed. Here, we have carried out a systematic study to characterize CeO2-NCs phase purity (X-ray diffraction), morphology (electron microscopy), and optical features (optical absorption, Raman scattering, and photoluminescence) to better establish their potential as anticancer drugs. Our study revealed anticancer effects of CeO2-NCs in HT29 and SW620 colorectal cancer cell lines with half-maximal inhibitory concentration (IC50) values of 2.26 and 121.18 μg ml-1, respectively. Reductions in cell viability indicated the cytotoxic potential of CeO2-NCs in HT29 cells based on inverted and florescence microscopy assessments. The mechanism of cytotoxicity confirmed by estimating possible changes in the expression levels of Bcl2, BclxL, Bax, PARP, cytochrome c, and β-actin (control) proteins in HT29 cells. Down-regulation of Bcl2 and BclxL and up-regulation of Bax, PARP, and cytochrome c proteins suggested the significant involvement of CeO2-NCs exposure in the induction of apoptosis. Furthermore, biocompatibility assay showed minimum effect of CeO2-NCs on human red blood cells.

Characterization and synergetic antibacterial properties of ZnO and CeO2 supported by halloysite

NASA Astrophysics Data System (ADS)

Shu, Zhan; Zhang, Yi; Ouyang, Jing; Yang, Huaming

2017-10-01

A novel antibacterial nanocomposite, CeO2-ZnO/HNTs was prepared by a homogeneous co-precipitation method in ethanol solution. ZnO and CeO2 nanoparticles with sizes of approximately 8 and 4 nm, respectively, were dispersively precipitated onto the surface of halloysite nanotubes (HNTs). HNTs served as a template for reducing the agglomeration of ZnO nanoparticles and improving the interface reactions between the nanocomposite and bacteria cells. CeO2 nanoparticles were introduced to suppress the recombination of electron-hole pairs, and narrow the energy gap of ZnO nanoparticles. The synergistic effects of ZnO, CeO2 nanoparticles and HNTs led to the superior antibacterial activity of the CeO2-ZnO/HNTs nanocomposite against gram-negative Escherichia coli.

In vitro skin decontamination of the organophosphorus pesticide Paraoxon with nanometric cerium oxide CeO2.

PubMed

Salerno, Alicia; Devers, Thierry; Bolzinger, Marie-Alexandrine; Pelletier, Jocelyne; Josse, Denis; Briançon, Stéphanie

2017-04-01

Organophosphorus compounds (OP), which mainly penetrate via the percutaneous pathway, represent a threat for both military and civilians. Body surface decontamination is vital to prevent victims poisoning. The development of a cost-effective formulation, which could be efficient and easy to handle in case of mass contamination, is therefore crucial. Metal oxides nanoparticles, due their large surface areas and the large amount of highly reactive sites, present high reactivity towards OP. First, this study aimed at evaluating the reaction of CeO 2 nanoparticles, synthetized by microwave path and calcined at 500 or 600 °C, with Paraoxon (POX) in aqueous solution. Results showed that both nanoparticles degraded 60%-70% of POX. CeO 2 calcined at 500 °C, owing to its larger specific area, was the most effective. Moreover, the degradation was significantly increased under Ultra-Violet irradiation (initial degradation rate doubled). Then, skin decontamination was studied in vitro using the Franz cell method with pig-ear skin samples. CeO 2 powder and an aqueous suspension of CeO 2 (CeO 2 -W) were applied 1 h after POX exposure. The efficiency of decontamination, including removal and/or degradation of POX, was compared to Fuller's earth (FE) and RSDL lotion which are, currently, the most efficient systems for skin decontamination. CeO 2 -W and RSDL were the most efficient to remove POX from the skin surface and decrease skin absorption by 6.4 compared to the control not decontaminated. FE reduced significantly (twice) the absorbed fraction of POX, contrarily to CeO 2 powder. Considering only the degradation rate of POX, the products ranged in the order CeO 2  > RSDL > CeO 2 -W > FE (no degradation). This study showed that CeO 2 nanoparticles are a promising material for skin decontamination of OP if formulated as a dispersion able to remove POX like CeO 2 -W and to degrade it as CeO 2 powder. Copyright © 2016 Elsevier Ireland Ltd. All rights reserved.

[Evaluation of the incidence of dental caries in patients with Down syndrome after their insertion in a preventive program].

PubMed

Castilho, Aline Rogéria Freire de; Marta, Sara Nader

2010-10-01

The objective of this work was to verify the incidence of dental caries by means of the CPO-D, CPO-S, ceo-d and ceo-s indexes in patients with Down syndrome regularly enrolled in a preventive program. Twenty four Down syndrome patients of both sexes age range of one to 48 years were examined. The prevalence (initial experimental situation) and incidence (final experimental situation) of dental caries were verified using of the initial and final CPO-D, CPO-S, ceo-d and ceo-s indexes of the participants. From 24 individual examined, 10 (42.0%) were free of caries. The prevalence of dental caries showed values of CPO-D= 2.33; CPO-S= 3.60; ceo-d= 1.75 e ceo-s= 2.80; while the incidence of caries showed values of 2.33; 3.80; 1.10 e 1.90, respectively. Down syndrome individuals evaluated in this study presented low level of caries and small incidence of new lesions, emphasizing the importance of the maintenance of these patients at preventive programs.

Rational design of octahedron and nanowire CeO2@MnO2 core-shell heterostructures with outstanding rate capability for asymmetric supercapacitors.

PubMed

Zhu, Shi Jin; Jia, Jia Qi; Wang, Tian; Zhao, Dong; Yang, Jian; Dong, Fan; Shang, Zheng Guo; Zhang, Yu Xin

2015-10-14

Two kinds of novel CeO2@MnO2 nanostructures have been synthesized via a self-assembly strategy. The as-prepared CeO2 nanowire@MnO2 nanostructures exhibited unprecedented pseudocapacitance performance (255 F g(-1)) with outstanding rate capability. A new mechanism based on the synergistic effect between CeO2 and MnO2 was proposed to interpret this phenomenon. When assembled as an asymmetric supercapacitor, an energy density of 27.5 W h kg(-1) with a maximum power density of 1.6 kW kg(-1) was achieved for CeO2 nanowire@MnO2 nanostructures.

Selective-area growth of GaN nanowires on SiO{sub 2}-masked Si (111) substrates by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kruse, J. E.; Doundoulakis, G.; Institute of Electronic Structure and Laser, Foundation for Research and Technology–Hellas, N. Plastira 100, 70013 Heraklion

2016-06-14

We analyze a method to selectively grow straight, vertical gallium nitride nanowires by plasma-assisted molecular beam epitaxy (MBE) at sites specified by a silicon oxide mask, which is thermally grown on silicon (111) substrates and patterned by electron-beam lithography and reactive-ion etching. The investigated method requires only one single molecular beam epitaxy MBE growth process, i.e., the SiO{sub 2} mask is formed on silicon instead of on a previously grown GaN or AlN buffer layer. We present a systematic and analytical study involving various mask patterns, characterization by scanning electron microscopy, transmission electron microscopy, and photoluminescence spectroscopy, as well asmore » numerical simulations, to evaluate how the dimensions (window diameter and spacing) of the mask affect the distribution of the nanowires, their morphology, and alignment, as well as their photonic properties. Capabilities and limitations for this method of selective-area growth of nanowires have been identified. A window diameter less than 50 nm and a window spacing larger than 500 nm can provide single nanowire nucleation in nearly all mask windows. The results are consistent with a Ga diffusion length on the silicon dioxide surface in the order of approximately 1 μm.« less

New PLAD apparatus and fabrication of epitaxial films and junctions of functional materials: SiC, GaN, ZnO, diamond and GMR layers

NASA Astrophysics Data System (ADS)

Muto, Hachizo; Kusumori, Takeshi; Nakamura, Toshiyuki; Asano, Takashi; Hori, Takahiro

2006-04-01

We have developed a new pulsed laser ablation-deposition (PLAD) apparatus and techniques for fabricating films of high-temperature or functional materials, including two short-wavelength lasers: (a) a YAG 5th harmonic (213 nm) and (b) Raman-shifted lasers containing vacuum ultraviolet light; also involved are (c) a high-temperature heater with a maximum temperature of 1350 °C, (d) dual-target simultaneous ablation mechanics, and (e) hybrid PLAD using a pico-second YAG laser combined with (c) and/or (d). Using the high-T heater, hetero-epitaxial films of 3C-, 2H- and 4H-SiC have been prepared on sapphire-c. In situ p-doping for GaN epitaxial films is achieved by simultaneous ablation of GaN and Mg targets by (d) during film growth. Junctions such as pGaN (Mg-doped)-film/n-SiC(0 0 0 1) substrate and pGaN/n-Si(1 1 1) show good diode characteristics. Epitaxial films with a diamond lattice can be grown on the sapphire-c plane by hybrid PLAD (e) with a high-T heater using a 6H-SiC target. High quality epitaxial films of ZnO are grown by PLAD by introducing a low-temperature self-buffer layer; magnetization of ferromagnetic materials is enforced by overlaying on a ferromagnetic lattice plane of an anti-ferromagnetic material, showing the value of the layer-overlaying method in improving quality. The short-wavelength lasers are useful in reducing surface particles on functional films, including superconductors.

Pulmonary Cerium Dioxide Nanoparticles Exposure Differentially Impairs Coronary and Mesenteric Arteriolar Reactivity

PubMed Central

Minarchick, Valerie C; Stapleton, Phoebe A; Porter, Dale W; Wolfarth, Michael G; Çiftyürek, Engin; Barger, Mark; Sabolsky, Edward M.; Nurkiewicz, Timothy R

2013-01-01

Cerium dioxide nanoparticles (CeO2 NPs) are an engineered nanomaterial that possesses unique catalytic, oxidative and reductive properties. Currently, CeO2 NPs are being used as a fuel catalyst but these properties are also utilized in the development of potential drug treatments for radiation and stroke protection. These uses of CeO2 NPs present a risk for human exposure; however, to date no studies have investigated the effects of CeO2 NPs on the microcirculation following pulmonary exposure. Previous studies in our laboratory with other nanomaterials have shown impairments in normal microvascular function after pulmonary exposures. Therefore, we predicted that CeO2 NP exposure would cause microvascular dysfunction that is dependent on the tissue bed and dose. Twenty-four hour post exposure to CeO2 NPs (0–400 μg), mesenteric and coronary arterioles were isolated and microvascular function was assessed. Our results provided evidence that pulmonary CeO2 NP exposure impairs endothelium-dependent and -independent arteriolar dilation in a dose-dependent manner. The CeO2 NP exposure dose which causes a 50% impairment in arteriolar function (EC50) was calculated and ranged from 15 – 100 μg depending on the chemical agonist and microvascular bed. Microvascular assessments with acetylcholine revealed a 33–75% reduction in function following exposure. Additionally, there was a greater sensitivity to CeO2 NP exposure in the mesenteric microvasculature due to the 40% decrease in the calculated EC50 compared to the coronary microvasculature EC50. CeO2 NP exposure increased mean arterial pressure in some groups. Taken together these observed microvascular changes may likely have detrimental effects on local blood flow regulation and contribute to cardiovascular dysfunction associated with particle exposure. PMID:23645470

Homogeneously dispersed CeO2 nanoparticles on exfoliated hexaniobate nanosheets

NASA Astrophysics Data System (ADS)

Marques, Thalles M. F.; Strayer, Megan E.; Ghosh, Anupama; Silva, Alexandre; Ferreira, Odair P.; Fujisawa, Kazunori; Alves da Cunha, Jose R.; Abreu, Guilherme J. P.; Terrones, Mauricio; Mallouk, Thomas E.; Viana, Bartolomeu C.

2017-12-01

Hexaniobate nanosheets derived from the parent compound K4Nb6O17 have been decorated with CeO2 nanoparticles by ion exchange with aqueous cerium (IV) solution. Very homogeneous CeO2 nanoparticle decoration of the hexaniobate sheets can be achieved by this method and the resulting composites may absorb visible light. HRTEM images show that ∼3.0 nm diameter CeO2 nanoparticles adhere to hexaniobate nanosheets that are exfoliated and then restacked prior to Ce deposition. The interfacial interaction between CeO2 nanoparticles and nanosheets would be due to an electrostatic attraction mechanism. Raman and XRD measurements have given strong evidence that CeO2 nanoparticles have fluorite structure. EDS, FTIR and XPS results suggest almost complete exchange of TBA+ and K+ by Ce4+. Cerium ion exchange on the acid exchanged parent compound, H2.9K1.1Nb6O17, revealed that the extent of Ce ion exchange is much greater in case of nanosheets, which may be rationalized by the larger surface area available after exfoliation. XPS measurements show that the ratio of Ce4+/Ce3+ is around 4.4, in agreement with the formation of fluorite structure (CeO2). Thus, these CeO2 nanoparticle/nanosheet composites may be useful for catalytic processes.

Synthesis and photocatalytic activity of p–n junction CeO2/Co3O4 photocatalyst for the removal of various dyes from wastewater

NASA Astrophysics Data System (ADS)

Tang, Yuanzheng; Zhang, Meng; Wu, Zhengying; Chen, Zhigang; Liu, Chengbao; Lin, Yun; Chen, Feng

2018-04-01

CeO2, Co3O4, and Co3O4/CeO2 composites are successfully synthesized by a simple coprecipitation method. X-ray powder diffraction (XRD) and Fourier transform infrared (FTIR) results indicate that the CeO2, Co3O4, and Co3O4/CeO2 precursors sintered at 500 °C has good crystallization. The cerium nitrate introduced into cobalt nitrate precursor solution improved the surface morphology and photocatalytic activity of Co3O4 significantly. The photo-degradation of methylene blue (MB), xylenol orange (XO), methyl orange (MO), and methyl red (MR) catalyzed by prepared nanocomposites were studied under visible light irradiation. Photocatalytic experiment results indicate that the photocatalytic activity of Co3O4/CeO2 composites for degradation of various dyes highly depend on pH value. The optimum conditions for the photocatalytic experiments of Co3O4/CeO2 composites were determined to be as follows: dye concentration, 50 mg L‑1, and catalyst concentration, 50 mg L‑1. The excellent photocatalytic activity of the p–n junction Co3O4/CeO2 composites can be ascribed to the ·O2‑ radicals and h+.

Structural evaluation of InAsP/InGaAsP strained-layer superlattices with dislocations as grown by metal-organic molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Nakashima, Kiichi; Sugiura, Hideo

1997-08-01

The relaxation process in InAsP/InGaAsP strained-layer superlattices (SLSs) with interfacial misfit dislocations has been investigated systematically by transmission electron microscopy (TEM) and x-ray analyses. The TEM analysis reveals that dislocations locate a little inside the buffer layer near the interface between the buffer and first well layer in the SLS. The x-ray analysis of (400) azimuthal angle dependence indicates the buffer layer has a large macroscopic tilt. Using a curve fitting analysis of various (hkl) x-ray profiles and reciprocal lattice mapping measurements, residual strain was determined quantitatively, i.e., Δa∥ and Δa⊥, in the SLS and buffer layer. These results reveal that the dislocations mainly cause lattice distortion of the buffer layer rather than relaxation of the SLS layer. The most remarkable result is that the change of a∥ is not equal to that of a⊥ in the buffer layer. This phenomenon strongly suggests that microplastic domains are generated in the buffer layer.

A facile synthesis for cauliflower like CeO2 catalysts from Ce-BTC precursor and their catalytic performance for CO oxidation

NASA Astrophysics Data System (ADS)

Zhang, Xiaodong; Hou, Fulin; Yang, Yang; Wang, Yuxin; Liu, Ning; Chen, Dan; Yang, Yiqiong

2017-11-01

The paper presents a novel and facile method for preparing cauliflowerlike CeO2 through direct decomposition of cerium based metal-organic framework (MOF) Ce-BTC (BTC = 1,3,5-benzenetricarboxylic acid) straw in air. Several analytical tools such as Scanning electron microscopy (SEM), X-ray diffraction (XRD), Thermogravimetric (TG), N2 adsorption-desorption, Temperature programmed reduction (TPR), Raman, X-ray photoelectron spectroscopic (XPS) and Photoluminescence (PL) have been used to characterize Ce-BTC and CeO2. The Ce-BTC calcined at 500 °C (CeO2-500) maintains the morphology of its template ;Ce-BTC; and forms a special cauliflower-like structure. XRD patterns showed that the catalyst has a perfect CeO2 crystal structure and has a smaller particle size. The prepared CeO2 cauliflowers exhibit excellent catalytic activities, long-term stability, and cycling stability for CO oxidation. The improved catalytic activities could be attributed to porous nanorods of CeO2 cauliflowers, which provide more active sites and oxygen vacancy for CO oxidation.

One-Pot Polyol Synthesis of Pt/CeO2 and Au/CeO2 Nanopowders as Catalysts for CO Oxidation.

PubMed

Pilger, Frank; Testino, Andrea; Lucchini, Mattia Alberto; Kambolis, Anastasios; Tarik, Mohammed; El Kazzi, Mario; Arroyo, Yadira; Rossell, Marta D; Ludwig, Christian

2015-05-01

The facile one-pot synthesis of CeO2-based catalysts has been developed to prepare a relatively large amount of nanopowders with relevant catalytic activity towards CO oxidation. The method consists of a two-steps process carried out in ethylene glycol: in the first step, 5 nm well-crystallized pure CeO2 is prepared. In a subsequent second step, a salt of a noble metal is added to the CeO2 suspension and the deposition of the noble metal on the nanocrystalline CeO2 is induced by heating. Two catalysts were prepared: Pt/CeO2 and Au/CeO2. The as-prepared catalysts, the thermally treated catalysts, as well as the pure CeO2, are characterized by XRD, TGA, XPS, FTIR, HR-TEM, STEM, particle size distribution, and N2-physisorption. In spite of the identical preparation protocol, Au and Pt behave in a completely different way: Au forms rather large particles, most of them with triangular shape, easily identifiable and dispersed in the CeO2 matrix. In contrast, Pt was not identified as isolated particles. The high resolution X-ray diffraction carried out on the Pt/CeO2 thermally treated sample (500 degrees C for 1 h) shows a significant CeO2 lattice shrinkage, which can be interpreted as an at least partial incorporation of Pt into the CeO2 crystal lattice. Moreover, only Pt2+ and Pt4+ species were identified by XPS. In literature, the incorporation of Pt into the CeO2 lattice is supported by first-principle calculations and experimentally demonstrated only by combustion synthesis methods. To the best of our knowledge this is the first report where ionically dispersed Pt into the CeO2 lattice is obtained via a liquid synthesis method. The thermally treated Pt/CeO2 sample revealed good activity with 50% CO conversion at almost room temperature.

Initial Reduction of CO2 on Pd-, Ru-, and Cu-Doped CeO2(111) Surfaces: Effects of Surface Modification on Catalytic Activity and Selectivity.

PubMed

Guo, Chen; Wei, Shuxian; Zhou, Sainan; Zhang, Tian; Wang, Zhaojie; Ng, Siu-Pang; Lu, Xiaoqing; Wu, Chi-Man Lawrence; Guo, Wenyue

2017-08-09

Surface modification by metal doping is an effective treatment technique for improving surface properties for CO 2 reduction. Herein, the effects of doped Pd, Ru, and Cu on the adsorption, activation, and reduction selectivity of CO 2 on CeO 2 (111) were investigated by periodic density functional theory. The doped metals distorted the configuration of a perfect CeO 2 (111) by weakening the adjacent Ce-O bond strength, and Pd doping was beneficial for generating a highly active O vacancy. The analyses of adsorption energy, charge density difference, and density of states confirmed that the doped metals were conducive for enhancing CO 2 adsorption, especially for Cu/CeO 2 (111). The initial reductive dissociation CO 2 → CO* + O* on metal-doped CeO 2 (111) followed the sequence of Cu- > perfect > Pd- > Ru-doped CeO 2 (111); the reductive hydrogenation CO 2 + H → COOH* followed the sequence of Cu- > perfect > Ru- > Pd-doped CeO 2 (111), in which the most competitive route on Cu/CeO 2 (111) was exothermic by 0.52 eV with an energy barrier of 0.16 eV; the reductive hydrogenation CO 2 + H → HCOO* followed the sequence of Ru- > perfect > Pd-doped CeO 2 (111). Energy barrier decomposition analyses were performed to identify the governing factors of bond activation and scission along the initial CO 2 reduction routes. Results of this study provided deep insights into the effect of surface modification on the initial reduction mechanisms of CO 2 on metal-doped CeO 2 (111) surfaces.

Stress response and tolerance of Zea mays to CeO2 nanoparticles: cross talk among H2O2, heat shock protein, and lipid peroxidation.

PubMed

Zhao, Lijuan; Peng, Bo; Hernandez-Viezcas, Jose A; Rico, Cyren; Sun, Youping; Peralta-Videa, Jose R; Tang, Xiaolei; Niu, Genhua; Jin, Lixin; Varela-Ramirez, Armando; Zhang, Jian-ying; Gardea-Torresdey, Jorge L

2012-11-27

The rapid development of nanotechnology will inevitably release nanoparticles (NPs) into the environment with unidentified consequences. In addition, the potential toxicity of CeO(2) NPs to plants and the possible transfer into the food chain are still unknown. Corn plants (Zea mays) were germinated and grown in soil treated with CeO(2) NPs at 400 or 800 mg/kg. Stress-related parameters, such as H(2)O(2), catalase (CAT), and ascorbate peroxidase (APX) activity, heat shock protein 70 (HSP70), lipid peroxidation, cell death, and leaf gas exchange were analyzed at 10, 15, and 20 days post-germination. Confocal laser scanning microscopy was used to image H(2)O(2) distribution in corn leaves. Results showed that the CeO(2) NP treatments increased accumulation of H(2)O(2), up to day 15, in phloem, xylem, bundle sheath cells and epidermal cells of shoots. The CAT and APX activities were also increased in the corn shoot, concomitant with the H(2)O(2) levels. Both 400 and 800 mg/kg CeO(2) NPs triggered the up-regulation of the HSP70 in roots, indicating a systemic stress response. None of the CeO(2) NPs increased the level of thiobarbituric acid reacting substances, indicating that no lipid peroxidation occurred. CeO(2) NPs, at both concentrations, did not induce ion leakage in either roots or shoots, suggesting that membrane integrity was not compromised. Leaf net photosynthetic rate, transpiration, and stomatal conductance were not affected by CeO(2) NPs. Our results suggest that the CAT, APX, and HSP70 might help the plants defend against CeO(2) NP-induced oxidative injury and survive NP exposure.

Stress Response and Tolerance of Zea mays to CeO2 Nanoparticles: Cross Talk among H2O2, Heat Shock Protein and Lipid Peroxidation

PubMed Central

Zhao, Lijuan; Peng, Bo; Hernandez-Viezcas, Jose A.; Rico, Cyren; Sun, Youping; Peralta-Videa, Jose R.; Tang, Xiaolei; Niu, Genhua; Jin, Lixin; Varela-Ramirez, Armando; Zhang, Jian-ying; Gardea-Torresdey, Jorge L.

2014-01-01

The rapid development of nanotechnology will inevitably release nanoparticles (NPs) into the environment with unidentified consequences. In addition, the potential toxicity of CeO2 NPs to plants, and the possible transfer into the food chain, are still unknown. Corn plants (Zea mays) were germinated and grown in soil treated with CeO2 NPs at 400 or 800 mg/kg. Stress related parameters, such as: H2O2, catalase (CAT) and ascorbate peroxidase (APX) activity, heat shock protein 70 (HSP 70), lipid peroxidation, cell death and leaf gas exchange were analyzed at 10, 15, and 20 days post germination. Confocal laser scanning microscopy was used to image H2O2 distribution in corn leaves. Results showed that the CeO2 NP treatments increased accumulation of H2O2, up to day 15, in phloem, xylem, bundle sheath cells, and epidermal cells of shoots. The CAT and APX activities were also increased in the corn shoot, concomitant with the H2O2 levels. Both 400 and 800 mg/kg CeO2 NPs triggered the up regulation of the HSP 70 in roots, indicating a systemic stress response. None of the CeO2 NPs increased the level of thiobarbituric acid reacting substances, indicating that no lipid peroxidation occurred. CeO2 NPs, at both concentrations, did not induce ion leakage in either roots or shoots, suggesting membrane integrity was not compromised. Leaf net photosynthetic rate, transpiration, and stomatal conductance were not affected by CeO2 NPs. Our results suggest that the CAT, APX and HSP 70 might help the plants defend against CeO2 NPs induced oxidative injury and survive NP exposure. PMID:23050848

Development of Poly(lactic acid)/Chitosan Fibers Loaded with Essential Oil for Antimicrobial Applications

PubMed Central

Liu, Yaowen; Wang, Shuyao; Zhang, Rong; Lan, Wenting; Qin, Wen

2017-01-01

Cinnamon essential oil (CEO) was successfully encapsulated into chitosan (CS) nanoparticles at different loading amounts (1%, 1.5%, 2%, and 2.5% v/v) using oil-in-water (o/w) emulsion and ionic-gelation methods. In order to form active packaging, poly(lactic acid) (PLA) was used to fabricate PLA/CS-CEO composite fibers using a simple electrospinning method. The shape, size, zeta potential, and encapsulation efficacy of the CS-CEO nanoparticles were investigated. The composition, morphology, and release behavior of the composite fibers were investigated. PLA/CS-CEO-1.5 showed good stability and favorable sustained release of CEO, resulting in improved antimicrobial activity compared to the other blends. The PLA/CS-CEO fibers showed high long-term inactivation rates against Escherichia coli and Staphylococcus aureus due to the sustained release of CEO, indicating that the developed PLA/CS-CEO fibers have great potential for active food packaging applications. PMID:28737719

CeO2 /Bi2 WO6 Heterostructured Microsphere with Excellent Visible-light-driven Photocatalytic Performance for Degradation of Tetracycline Hydrochloride.

PubMed

Zhang, Fengjun; Zou, Shuang; Wang, Tianye; Shi, Yuxi; Liu, Peng

2017-10-01

CeO 2 /Bi 2 WO 6 heterostructured microsphere with excellent and stable photocatalytic activity for degradation tetracyclines was successfully synthesized via a facile solvothermal route. The photocatalytic experiments indicated that CeO 2 /Bi 2 WO 6 heterostructured microspheres exhibited enhanced photocatalytic activity compared to pure Bi 2 WO 6 in both the degradation of tetracycline hydrochloride (TCH) and rhodamine B (RhB) under visible-light irradiation. The 1CeO 2 /2Bi 2 WO 6 exhibited the best photocatalytic activity for degradation of TCH, reaching 91% after 60 min reaction. The results suggested that the particular morphological conformation of the microspheres resulted in smaller size and more uniform morphology so as to increase the specific surface area. Meanwhile, the heterojunction was formed by coupling CeO 2 and Bi 2 WO 6 in the as-prepared microspheres, so that the separation efficiency of photogenerated electrons and holes was dramatically improved and the lifetimes of charge carriers were prolonged. Hence, introduction of CeO 2 could significantly enhance the photocatalytic activity of CeO 2 /Bi 2 WO 6 heterostructured microspheres and facilitate the degradation of TCH. This work provided not only a principle method to synthesize CeO 2 /Bi 2 WO 6 with the excellent photocatalytic performance for actual produce, but also a excellent property of the photocatalyst for potential application in photocatalytic treatment of tetracyclines wastewater from pharmaceutical factory. © 2017 The American Society of Photobiology.

Cerium oxide nanoparticle elicits oxidative stress, endocrine imbalance and lowers sperm characteristics in testes of balb/c mice.

PubMed

Adebayo, O A; Akinloye, O; Adaramoye, O A

2018-04-01

The toxicity of metallic nanoparticles is a growing concern due to its application in industries and homes. We investigated the toxicity of cerium oxide nanoparticles (CeO 2 NPs) on reproductive system in male balb/c mice. Twenty mice were divided into four groups of five animals each and treated thus: normal saline (control), 100, 200 and 300 μg/kg CeO 2 NPs (i.p.,) thrice in a week for five consecutive weeks. Results showed that CeO 2 NPs significantly reduced the levels of haemoglobin, PCV and RBC count relative to controls. In addition, luteinising and follicle-stimulating hormones (FSH and LH) and prolactin were significantly reduced in the mice. Specifically, CeO 2 NPs at 100 μg/kg decreased testosterone by 23%, while CeO 2 NPs at 200 μg/kg decreased FSH, LH and prolactin by 25%, 26% and 13%, respectively. Testicular malondialdehyde was increased by 103%, 106% and 135% in mice treated with 100, 200 and 300 μg/kg CeO 2 NPs, respectively. CeO 2 NPs caused a significant reduction in activities of antioxidant enzymes and levels of reduced glutathione and total nitric oxide. Moreso, CeO 2 NPs decreased sperm motility and count and increased total sperm abnormality in mice. Histology revealed congestion and degeneration of seminiferous tubules. Overall, CeO 2 NPs induces testicular dysfunction via disruption of antioxidant/oxidant balance and endocrine suppression. © 2017 Blackwell Verlag GmbH.

Aerosol Physics Considerations for Using Cerium Oxide CeO 2 as a Surrogate for Plutonium Oxide PuO 2 in Airborne Release Fraction Measurements for Storage Container Investigations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moore, Murray E.; Tao, Yong

Cerium oxide (CeO2) dust is recommended as a surrogate for plutonium oxide (PuO2) in airborne release fraction experiments. The total range of applicable particle sizes for PuO2 extends from 0.0032 μm (the diameter of a single PuO2 molecule) to 10 μm (the defined upper boundary for respirable particles). For particulates with a physical particle diameter of 1.0 μm, the corresponding aerodynamic diameters for CeO2 and PuO2 are 2.7 μm and 3.4 μm, respectively. Cascade impactor air samplers are capable of measuring the size distributions of CeO2 or PuO2 particulates. In this document, the aerodynamic diameters for CeO2 and PuO2 weremore » calculated for seven different physical diameters (0.0032, 0.02, 0.11, 0.27, 1.0, 3.2, and 10 μm). For cascade impactor measurements, CeO2 and PuO2 particulates with the same physical diameter would be collected onto the same or adjacent collection substrates. The difference between the aerodynamic diameter of CeO2 and PuO2 particles (that have the same physical diameter) is 39% of the resolution of a twelve-stage MSP Inc. 125 cascade impactor, and 34% for an eight-stage Andersen impactor. An approach is given to calculate the committed effective dose (CED) coefficient for PuO2 aerosol particles, compared to a corresponding aerodynamic diameter of CeO2 particles. With this approach, use of CeO2 as a surrogate for PuO2 material would follow a direct conversion based on a molar equivalent. In addition to the analytical information developed for this document, several US national labs have published articles about the use of CeO2 as a PuO2 surrogate. Different physical and chemical aspects were considered by these investigators, including thermal properties, ceramic formulations, cold pressing, sintering, molecular reactions, and mass loss in high temperature gas flows. All of those US national lab studies recommended the use of CeO2 as a surrogate material for PuO2.« less

Morphology, structure and optical properties of hydrothermally synthesized CeO2/CdS nanocomposites

NASA Astrophysics Data System (ADS)

Mohanty, Biswajyoti; Nayak, J.

2018-04-01

CeO2/CdS nanocomposites were synthesized using a two-step hydrothermal technique. The effects of precursor concentration on the optical and structural properties of the CeO2/CdS nanoparticles were systematically studied. The morphology, composition and the structure of the CeO2/CdS nanocomposite powder were studied by scanning electron microscopy (SEM), energy dispersive X-ray spectrum analysis (EDXA) and X-ray diffraction (XRD), respectively. The optical properties of CeO2/CdS nanocomposites were studied by UV-vis absorption and photoluminescence (PL) spectroscopy. The optical band gaps of the CeO2/CdS nanopowders ranged from 2.34 eV to 2.39 eV as estimated from the UV-vis absorption. In the room temperature photoluminescence spectrum of CeO2/CdS nanopowder, a strong blue emission band was observed at 400 nm. Since the powder shows strong visible luminescence, it may be used as a blue phosphor in future. The original article published with this DOI was submitted in error. The correct article was inadvertently left out of the original submission. This has been rectified and the correct article was published online on 16 April 2018.

Low Resistance, Unannealed ohmic Contacts to n-Type InAs0.66Sb0.34

DTIC Science & Technology

2007-11-08

by solid-source molecular beam epitaxy (MBE). Structures consisted of a semi-insulating GaAs substrate, a 1.0 mm undoped AlSb buffer, and 1.0 mm n...6.1 Å-based HEMTs have been demonstrated recently [1, 2]. New materials such as InxGa1-xSb, InAsySb1-y, and InxAl1-xAsySb1-y, with lattice constants...speed operation [3]. Initial work on HEMTs and InAs heterojunction bipolar transistors (HBTs) has been promising [1, 4–7], but the fabrication of 6.2 Å

ZnO and related materials: Plasma-Assisted molecular beam epitaxial growth, characterization and application

NASA Astrophysics Data System (ADS)

Hong, S. K.; Chen, Y.; Ko, H. J.; Wenisch, H.; Hanada, T.; Yao, T.

2001-06-01

This paper will address features of plasma-assisted molecular beam epitaxial growth of ZnO and related materials and their characteristics. Two-dimensional, layer-by-layer growth is achieved both on c-plane sampphire by employing MgO buffer layer growth and on (0001) GaN/Al2O3 template by predepositing a low-temperature buffer layer followed by high-temperature annealing. Such two-dimensional growth results in the growth of high-quality heteroepitaxial ZnO epilayers. Biexciton emission is obtained from such high quality epilayers The polarity of heteroepitaxial ZnO epilayers is controlled by engineering the heterointerfaces. We achieved selective growth of Zn-polar and O-polar ZnO heteroepitaxial layers. The origin of different polarities can be successfully explained by an interface bonding sequence model. N-type conductivity in Gadoped ZnO epilayers is successfully controlled. High conductivity, enough to be applicable to devices, is achieved. MgxZn1-xO/ZnO heterostructures are grown and emission from a ZnO quantum well is observed. Mg incorporation in a MgZnO alloy is determined by in-situ reflection high-energy electron diffraction intensity oscillations, which enables precise control of the composition. Homoepitaxy on commericial ZnO substrates has been examined. Reflection high-energy electron diffraction intensity oscillations during homoepitaxy growth are observed.

Adsorption of cadmium on cerium oxide nanoparticles and oyster shells

NASA Astrophysics Data System (ADS)

Ji, Yongbo; Liu, Zhuomiao; Dang, Yonghui; Xu, Lina; Ning, Fangyuan; Xue, Yinhao; Wei, Yongpeng; Dai, Yanhui

2018-03-01

This study investigated the adsorption of cadmium (Cd(II)) by cerium oxide nanoparticles (CeO2 NPs) and oyster shells in seawater. The results showed that the addition of Cd(II) significantly inhibited the agglomeration of CeO2 NPs both in DI water and seawater, increased the positive charges of CeO2 NPs in DI water and neutralized the negative charges of CeO2 NPs in seawater. Additionally, CeO2 NPs could adsorb Cd and the bioavailability of Cd was reduced in the presence of oyster shells. This study demonstrated that the adsorption of metals on shells should not be neglected for the accumulation of metals by shellfish.

Terahertz radiation in In{sub 0.38}Ga{sub 0.62}As grown on a GaAs wafer with a metamorphic buffer layer under femtosecond laser excitation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ponomarev, D. S., E-mail: ponomarev-dmitr@mail.ru; Khabibullin, R. A.; Yachmenev, A. E.

The results of time-domain spectroscopy of the terahertz (THz) generation in a structure with an In{sub 0.38}Ga{sub 0.62}As photoconductive layer are presented. This structure grown by molecular-beam epitaxy on a GaAs substrate using a metamorphic buffer layer allows THz generation with a wide frequency spectrum (to 6 THz). This is due to the additional contribution of the photo-Dember effect to THz generation. The measured optical-to-terahertz conversion efficiency in this structure is 10{sup –5} at a rather low optical fluence of ~40 μJ/cm{sup 2}, which is higher than that in low-temperature grown GaAs by almost two orders of magnitude.

Ethanol Sensor of CdO/Al2O3/CeO2 Obtained from Ce-DOPED Layered Double Hydroxides with High Response and Selectivity

NASA Astrophysics Data System (ADS)

Xu, Dongmei; Guan, Meiyu; Xu, Qinghong; Guo, Ying; Wang, Yao

2013-04-01

In this paper, Ce-doped CdAl layered double hydroxide (LDH) was first synthesized and the derivative CdO/Al2O3/CeO2 composite oxide was prepared by calcining Ce-doped CdAl LDH. The structure, morphology and chemical state of the Ce doped CdAl LDH and CdO/Al2O3/CeO2 were also investigated by X-ray diffraction (XRD), Fourier transform infrared (FT-IR), solid state nuclear magnetic resonance (SSNMR), scanning electron microscope (SEM) and X-ray photoelectron spectroscopy (XPS). The gas sensing properties of CdO/Al2O3/CeO2 to ethanol were further studied and compared with CdO/Al2O3 prepared from CdAl LDH, CeO2 powder as well as the calcined Ce salt. It turns out that CdO/Al2O3/CeO2 sensor shows best performance in ethanol response. Besides, CdO/Al2O3/CeO2 possesses short response/recovery time (12/72 s) as well as remarkable selectivity in ethanol sensing, which means composite oxides prepared from LDH are very promising in gas sensing application.

Microwave synthesis of pure and doped cerium (IV) oxide (CeO2) nanoparticles for methylene blue degradation.

PubMed

El Rouby, W M A; Farghali, A A; Hamdedein, A

2016-11-01

Cerium (IV) oxide (CeO 2 ), samarium (Sm) and gadolinium (Gd) doped CeO 2 nanoparticles were prepared using microwave technique. The effect of microwave irradiation time, microwave power and pH of the starting solution on the structure and crystallite size were investigated. The prepared nanoparticles were characterized using X-ray diffraction, FT-Raman spectroscopy, and transmission electron microscope. The photocatalytic activity of the as-prepared CeO 2 , Sm and Gd doped CeO 2 toward degradation of methylene blue (MB) dye was investigated under UV light irradiation. The effect of pH, the amount of catalyst and the dye concentration on the degradation extent were studied. The photocatalytic activity of CeO 2 was kinetically enhanced by trivalent cation (Gd and Sm) doping. The results revealed that Gd doped CeO 2 nanoparticles exhibit the best catalytic degradation activity on MB under UV irradiation. For clarifying the environmental safety of the by products produced from the degradation process, the pathways of MB degradation were followed using liquid chromatography/mass spectroscopy (LC/MS). The total organic carbon content measurements confirmed the results obtained by LC/MS. Compared to the same nanoparticles prepared by another method, it was found that Gd doped CeO 2 prepared by hydrothermal process was able to mineralize MB dye completely under UV light irradiation.

Synthesis of novel CeO2-BiVO4/FAC composites with enhanced visible-light photocatalytic properties.

PubMed

Zhang, Jin; Wang, Bing; Li, Chuang; Cui, Hao; Zhai, Jianping; Li, Qin

2014-09-01

To utilize visible light more effectively in photocatalytic reactions, a fly ash cenosphere (FAC)-supported CeO2-BiVO4 (CeO2-BiVO4/FAC) composite photocatalyst was prepared by modified metalorganic decomposition and impregnation methods. The physical and photophysical properties of the composite have been characterized by X-ray diffraction (XRD), scanning electron microscope (SEM) and energy dispersive X-ray spectroscopy (EDX), X-ray photoelectron spectroscopy (XPS), and UV-Visible diffuse reflectance spectra. The XRD patterns exhibited characteristic diffraction peaks of both BiVO4 and CeO2 crystalline phases. The XPS results showed that Ce was present as both Ce(4+) and Ce(3+) oxidation states in CeO2 and dispersed on the surface of BiVO4 to constitute a p-n heterojunction composite. The absorption threshold of the CeO2-BiVO4/FAC composite shifted to a longer wavelength in the UV-Vis absorption spectrum compared to the pure CeO2 and pure BiVO4. The composites exhibited enhanced photocatalytic activity for Methylene Blue (MB) degradation under visible light irradiation. It was found that the 7.5wt.% CeO2-BiVO4/FAC composite showed the highest photocatalytic activity for MB dye wastewater treatment. Copyright © 2014. Published by Elsevier B.V.

Cardioprotective effect of cerium oxide nanoparticles in monocrotaline rat model of pulmonary hypertension: A possible implication of endothelin-1.

PubMed

Nassar, Seham Zakaria; Hassaan, Passainte S; Abdelmonsif, Doaa A; ElAchy, Samar Nabil

2018-05-15

Cerium oxide nanoparticles (CeO 2 NPs) have been recently introduced into the medical field for their antioxidant properties. The ability of CeO 2 NPs alone or in combination with spironolactone (SP) to attenuate monocrotaline (MCT)-induced pulmonary hypertension and associated right ventricular hypertrophy was studied in rats. A special emphasis was given to endothelin-1 pathway. Pulmonary hypertension was induced in albino rats by a single subcutaneous injection of MCT (60 mg/kg). Rats received either single CeO 2 NPs therapy or combined therapy with SP for 2 weeks. CeO 2 NPs improved pulmonary function tests with concomitant decrease in serum endothelin-1 and pulmonary expression of endothelin-1 and its receptor ETAR. Besides, CeO 2 NPs diminished MCT-induced right ventricular hypertrophy and reduced cardiac oxidative stress and apoptosis. CeO 2 NPs could improve pulmonary hypertension and associated right ventricular hypertrophy with no additive value for SP. Besides being an antioxidant, CeO 2 NPs work through endothelin-1 pathway to improve pulmonary hypertension. Copyright © 2018 Elsevier Inc. All rights reserved.

Template-Free Hydrothermal Synthesis, Mechanism, and Photocatalytic Properties of Core-Shell CeO2 Nanospheres

NASA Astrophysics Data System (ADS)

Li, Huijie; Meng, Fanming; Gong, Jinfeng; Fan, Zhenghua; Qin, Rui

2018-03-01

CeO2 nanospheres with the core-shell nanostructure have been successfully synthesized by a template-free hydrothermal method. The structures, morphologies and optical properties of core-shell CeO2 nanospheres were analyzed by X-ray diffraction (XRD), TG, Fourier transform infrared spectroscopy, XRD, EDS, SAED, scanning electron microscopy and transmission electron microscopy, UV-Vis diffuse reflectance spectra, Raman analyses. The degradation efficiencies of core-shell CeO2 nanospheres for methyl orange were as high as 93.49, 95.67 and 98.28% within 160 min, and the rates of photo degradation of methyl orange by core-shell CeO2 nanospheres under UV-light were 0.01693, 0.01782 and 0.02375 min-1. Methyl orange was degraded in photocatalytic oxidation processes, which mainly gave the credit to a large number of reactive species including h+, surface superoxide species ·O2 -, and ·OH radicals. The core-shell structure, small crystallite size and the conversion between Ce3+ and Ce4+ of CeO2 nanospheres were of importance for its catalytic activity. These results demonstrated the possibility of improving the efficient catalysts of the earth abundant CeO2 catalysts.

MBE growth and optical properties of GaN layers on SiC/Si(111) hybrid substrate

NASA Astrophysics Data System (ADS)

Reznik, R. R.; Kotlyar, K. P.; Soshnikov, I. P.; Kukushkin, S. A.; Osipov, A. V.; Nikitina, E. V.; Cirlin, G. E.

2017-11-01

The fundamental possibility of the growth of GaN layers by molecular-beam epitaxy on a silicon substrate with nanoscale buffer layer of silicon carbide without any AlN layers has been demonstrated for the first time. Morphological properties of the resulting system have been studied.

Resonant x-ray diffraction revealing chemical disorder in sputtered L10 FeNi on Si(0 0 1)

NASA Astrophysics Data System (ADS)

Frisk, Andreas; Lindgren, Bengt; Pappas, Spiridon D.; Johansson, Erik; Andersson, Gabriella

2016-10-01

In the search for new rare earth free permanent magnetic materials, FeNi with a L10 structure is a possible candidate. We have synthesized the phase in the thin film form by sputtering onto HF-etched Si(0 0 1) substrates. Monatomic layers of Fe and Ni were alternately deposited on a Cu buffer layer, all of which grew epitaxially on the Si substrates. A good crystal structure and epitaxial relationship was confirmed by in-house x-ray diffraction (XRD). The chemical order, which to some part is the origin of an uniaxial magnetic anisotropy, was measured by resonant XRD. The 0 0 1 superlattice reflection was split in two symmetrically spaced peaks due to a composition modulation of the Fe and Ni layers. Furthermore the influence of roughness induced chemical anti-phase domains on the RXRD pattern is exemplified. A smaller than expected magnetic uniaxial anisotropy energy was obtained, which is partly due to the composition modulations, but the major reason is concluded to be the Cu buffer surface roughness.

Resonant x-ray diffraction revealing chemical disorder in sputtered L10 FeNi on Si(0 0 1).

PubMed

Frisk, Andreas; Lindgren, Bengt; Pappas, Spiridon D; Johansson, Erik; Andersson, Gabriella

2016-10-12

In the search for new rare earth free permanent magnetic materials, FeNi with a L10 structure is a possible candidate. We have synthesized the phase in the thin film form by sputtering onto HF-etched Si(0 0 1) substrates. Monatomic layers of Fe and Ni were alternately deposited on a Cu buffer layer, all of which grew epitaxially on the Si substrates. A good crystal structure and epitaxial relationship was confirmed by in-house x-ray diffraction (XRD). The chemical order, which to some part is the origin of an uniaxial magnetic anisotropy, was measured by resonant XRD. The 0 0 1 superlattice reflection was split in two symmetrically spaced peaks due to a composition modulation of the Fe and Ni layers. Furthermore the influence of roughness induced chemical anti-phase domains on the RXRD pattern is exemplified. A smaller than expected magnetic uniaxial anisotropy energy was obtained, which is partly due to the composition modulations, but the major reason is concluded to be the Cu buffer surface roughness.

Self-assembled growth of Au islands on a Mo(110) surface.

PubMed

Wawro, A; Sobańska, M; Petroutchik, A; Baczewski, L T; Pankowski, P

2010-08-20

The self-assembled growth of epitaxial Au(111) islands on a Mo(110) buffer layer has been investigated as a function of growth temperature and amount of deposited material by reflection high energy electron diffraction and atomic force microscopy. At the growth temperature of 385 degrees C the dendrite-shaped islands coexist with the compact ones. The uniform islands formed at 500 degrees C adopt mostly a shape of truncated pyramids with a well developed (111) top plane and {111} and {100} side facets. As the growth temperature reaches 800 degrees C the Au islands take less regular shapes due to occurrence of coalescence. The averaged area and height of the islands increase with the deposition temperature and the amount of deposited material. The surface density of the islands decreases with increasing temperature. The epitaxial relations at the interface between the Au islands and the Mo buffer determined from the angular dependence of the electron diffraction pattern favour the Nishiyama-Wassermann growth mode. Factors responsible for the island-like growth and possible mechanisms of diffusion are discussed in details.

Density functional analysis of fluorite-structured (Ce, Zr)O 2/CeO 2 interfaces [Density functional analysis of fluorite-structured (Ce, Zr)O 2/CeO 2 interfaces: Implications for catalysis and energy applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Weck, Philippe F.; Juan, Pierre -Alexandre; Dingreville, Remi

The structures and properties of Ce 1–xZr xO 2 (x = 0–1) solid solutions, selected Ce 1–xZr xO 2 surfaces, and Ce 1–xZr xO 2/CeO 2 interfaces were computed within the framework of density functional theory corrected for strong electron correlation (DFT+ U). The calculated Debye temperature increases steadily with Zr content in (Ce, Zr)O 2 phases, indicating a significant rise in microhardness from CeO 2 to ZrO 2, without appreciable loss in ductility as the interfacial stoichiometry changes. Surface energy calculations for the low-index CeO 2(111) and (110) surfaces show limited sensitivity to strong 4f-electron correlation. The fracture energymore » of Ce 1–xZr xO 2(111)/CeO 2(111) increases markedly with Zr content, with a significant decrease in energy for thicker Ce 1–xZr xO 2 films. These findings suggest the crucial role of Zr acting as a binder at the Ce 1–xZr xO 2/CeO 2 interfaces, due to the more covalent character of Zr–O bonds compared to Ce–O. Finally, the impact of surface relaxation upon interface cracking was assessed and found to reach a maximum for Ce 0.25Zr 0.75O 2/CeO 2 interfaces.« less

Catalytic hydrolysis of COS over CeO2 (110) surface: A density functional theory study

NASA Astrophysics Data System (ADS)

Song, Xin; Ning, Ping; Wang, Chi; Li, Kai; Tang, Lihong; Sun, Xin

2017-08-01

Density functional theory (DFT) calculations were performed to investigate the reaction pathways for catalytic hydrolysis of COS over CeO2 (110) surface using Dmol3 model. The thermodynamic stability analysis for the suggested routes of COS hydrolysis to CO2 and H2S was evaluated. The absolute values of adsorption energy of H2O-CeO2 are higher than that of COS-CeO2. Meanwhile, the adsorption energy and geometries show that H2O is easier adsorbed on the surface of CeO2 (110) than COS. H2O plays a role as a bridge in the process of joint adsorption. H2O forms more Cesbnd Osbnd H groups on the CeO2 (110) surface. CeO2 decreases the maximum energy barrier by 76.15 kcal/mol. The migration of H from H2O to COS is the key for the hydrolysis reaction. Csbnd O channel is easier to occur than Csbnd S channel. Experimental result shows that adding of CeO2 can increase COS removal rate and prolong the 100% COS removal rate from 180 min to 210 min. The difference between Fe2O3 and CeO2 for the hydrolysis of COS is characterized in the atomic charge transfer and the formation of Hsbnd O bond and Hsbnd S bond. The transfer effect of H in H2O to S in COS over CeO2 decreases the energy barriers of hydrolysis reaction, and enhances the reaction activity of COS hydrolysis.

Density functional analysis of fluorite-structured (Ce, Zr)O 2/CeO 2 interfaces [Density functional analysis of fluorite-structured (Ce, Zr)O 2/CeO 2 interfaces: Implications for catalysis and energy applications

DOE PAGES

Weck, Philippe F.; Juan, Pierre -Alexandre; Dingreville, Remi; ...

2017-06-21

The structures and properties of Ce 1–xZr xO 2 (x = 0–1) solid solutions, selected Ce 1–xZr xO 2 surfaces, and Ce 1–xZr xO 2/CeO 2 interfaces were computed within the framework of density functional theory corrected for strong electron correlation (DFT+ U). The calculated Debye temperature increases steadily with Zr content in (Ce, Zr)O 2 phases, indicating a significant rise in microhardness from CeO 2 to ZrO 2, without appreciable loss in ductility as the interfacial stoichiometry changes. Surface energy calculations for the low-index CeO 2(111) and (110) surfaces show limited sensitivity to strong 4f-electron correlation. The fracture energymore » of Ce 1–xZr xO 2(111)/CeO 2(111) increases markedly with Zr content, with a significant decrease in energy for thicker Ce 1–xZr xO 2 films. These findings suggest the crucial role of Zr acting as a binder at the Ce 1–xZr xO 2/CeO 2 interfaces, due to the more covalent character of Zr–O bonds compared to Ce–O. Finally, the impact of surface relaxation upon interface cracking was assessed and found to reach a maximum for Ce 0.25Zr 0.75O 2/CeO 2 interfaces.« less

Long term effects of cerium dioxide nanoparticles on the nitrogen removal, micro-environment and community dynamics of a sequencing batch biofilm reactor.

PubMed

Xu, Yi; Wang, Chao; Hou, Jun; Wang, Peifang; Miao, Lingzhan; You, Guoxiang; Lv, Bowen; Yang, Yangyang; Zhang, Fei

2017-12-01

The influences of cerium dioxide nanoparticles (CeO 2 NPs) on nitrogen removal in biofilm were investigated. Prolonged exposure (75d) to 0.1mg/L CeO 2 NPs caused no inhibitory effects on nitrogen removal, while continuous addition of 10mg/L CeO 2 NPs decreased the treatment efficiency to 53%. With the progressive concentration of CeO 2 NPs addition, the removal efficiency could nearly stabilize at 67% even with the continues spike of 10mg/L. The micro-profiles of dissolved oxygen, pH, and oxidation reduction potential suggested the developed protection mechanisms of microbes to progressive CeO 2 NPs exposure led to the less influence of microenvironment, denitrification bacteria and enzyme activity than those with continuous ones. Furthermore, high throughput sequencing illustrated the drastic shifted communities with gradual CeO 2 NPs spiking was responsible for the adaption and protective mechanisms. The present study demonstrated the acclimated microbial community was able to survive CeO 2 NPs addition more readily than those non-acclimated. Copyright © 2017 Elsevier Ltd. All rights reserved.

Graphene as a Buffer Layer for Silicon Carbide-on-Insulator Structures

PubMed Central

Astuti, Budi; Tanikawa, Masahiro; Rahman, Shaharin Fadzli Abd; Yasui, Kanji; Hashim, Abdul Manaf

2012-01-01

We report an innovative technique for growing the silicon carbide-on-insulator (SiCOI) structure by utilizing polycrystalline single layer graphene (SLG) as a buffer layer. The epitaxial growth was carried out using a hot-mesh chemical vapor deposition (HM-CVD) technique. Cubic SiC (3C-SiC) thin film in (111) domain was realized at relatively low substrate temperature of 750 °C. 3C-SiC energy bandgap of 2.2 eV was confirmed. The Si-O absorption band observed in the grown film can be caused by the out-diffusion of the oxygen atom from SiO2 substrate or oxygen doping during the cleaning process. Further experimental works by optimizing the cleaning process, growth parameters of the present growth method, or by using other growth methods, as well, are expected to realize a high quality SiCOI structure, thereby opening up the way for a breakthrough in the development of advanced ULSIs with multifunctionalities.

Antispasmodic effects and composition of the essential oils from two South American chemotypes of Lippia alba.

PubMed

Blanco, Marcos A; Colareda, Germán A; van Baren, Catalina; Bandoni, Arnaldo L; Ringuelet, Jorge; Consolini, Alicia E

2013-10-07

Lippia alba (Mill.) N. E. Brown (Verbenaceae) is an aromatic species used in Central and South America as eupeptic for indigestion. In Argentina, it is used by the "criollos" from the Chaco province. There are several chemotypes which differ in the chemical composition of the essential oils. Nowadays, it is experimentally cultivated in some countries of the region, including Argentina. To compare the chemical composition and pharmacology of the essential oils from two chemotypes: "citral" (CEO) and "linalool" (LEO), in isolated rat duodenum and ileum. Contractile concentration-response curves (CRC) of acetylcholine (ACh) and calcium in 40mM K(+)-medium (Ca(2+)-CRC) were done in isolated intestine portions, in the absence and presence of CEO or LEO at different concentrations. Likewise verapamil, CEO and LEO induced a non-competitive inhibition of the ACh-CRC, with IC50 of 7.0±0.3mg CEO/mL and 37.2±4.2mg LEO/mL. l-NAME, a NO-synthase blocker, increased the IC50 of CEO to 26.1±8.7mg CEO/mL. Likewise verapamil, CEO and LEO non-competitively inhibited the Ca(2+)-CRC, with IC50 of 6.3±1.7mg CEO/mL, 7.0±2.5mg LEO/mL and 0.24±0.04mg verapamil/mL (pIC50: 6.28). CEO was proved to possess limonene, neral, geranial and (-)-carvone as the major components, while LEO was rich in linalool. Results suggest that CEO has five times more potency than LEO to inhibit muscarinic contractions. The essential oils of both chemotypes interfered with the Ca(2+)-influx, but with an IC50 about 28 times higher than that of verapamil. Moreover, CEO partially stimulated the NO production. These results show the medicinal usefulness of both Lippia alba chemotypes, thus validating its traditional use, potency and mechanism of action. © 2013 Published by Elsevier Ireland Ltd.

The effect of the MgO buffer layer thickness on magnetic anisotropy in MgO/Fe/Cr/MgO buffer/MgO(001)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kozioł-Rachwał, Anna, E-mail: a.koziolrachwal@aist.go.jp; AGH University of Science and Technology, Faculty of Physics and Applied Computer Science, al. Mickiewicza 30, 30-059 Kraków; Nozaki, Takayuki

2016-08-28

The relationship between the magnetic properties and MgO buffer layer thickness d was studied in epitaxial MgO/Fe(t)/Cr/MgO(d) layers grown on MgO(001) substrate in which the Fe thickness t ranged from 0.4 nm to 1.1 nm. For 0.4 nm ≤ t ≤ 0.7 nm, a non-monotonic coercivity dependence on the MgO buffer thickness was shown by perpendicular magneto-optic Kerr effect magnetometry. For thicker Fe films, an increase in the buffer layer thickness resulted in a spin reorientation transition from perpendicular to the in-plane magnetization direction. Possible origins of these unusual behaviors were discussed in terms of the suppression of carbon contamination at the Fe surface and changes inmore » the magnetoelastic anisotropy in the system. These results illustrate a method to control magnetic anisotropy in MgO/Fe/Cr/MgO(d) via an appropriate choice of MgO buffer layer thickness d.« less

Nanocrystalline CeO2-δ coated β-MnO2 nanorods with enhanced oxygen transfer property

NASA Astrophysics Data System (ADS)

Huang, Xiubing; Zhao, Guixia; Chang, Yueqi; Wang, Ge; Irvine, John T. S.

2018-05-01

In this research, β-MnO2 nanorods were synthesized by a hydrothermal method, followed by a facile precipitation method to obtain nanocrystalline CeO2-δ coated β-MnO2 nanorods. The as-prepared samples were characterized by XRD, HRTEM, FESEM, XPS and in-situ high-temperature XRD. The HRTEM results show that well dispersed CeO2-δ nanocrystals sized about 5 nm were coated on the surface of β-MnO2 nanorods. The oxygen storage and transfer property of as-synthesized materials were evaluated using TGA under various atmospheres (air, pure N2, and 5%H2/95%Ar). The TGA results indicate that CeO2-δ modification could favour the reduction of Mn4+ to Mn3+ and/or Mn2+ at lower temperature as compared with pure β-MnO2 nanorods and the physically mixed CeO2-δ-β-MnO2 under low oxygen partial pressure conditions (i.e., pure N2, 5%H2/95%Ar). Specifically, CeO2-δ@β-MnO2 sample can exhibit 7.5 wt% weight loss between 100 and 400 °C under flowing N2 and 11.4 wt% weight loss between 100 and 350 °C under flowing 5%H2/95%Ar. During the reduction process under pure N2 or 5%H2/95%Ar condition, the oxygen ions in β-MnO2 nanorods are expected to be released to the surroundings in the form of O2 or H2O with the coated CeO2-δ nanocrystals acting as mediator as inferred from the synergistic effect between the well-interacted CeO2-δ nanocrystals and β-MnO2 nanorods.

Effect of Dopants on the Adsorption of Carbon Dioxide on Ceria Surfaces

DOE PAGES

Li, Meijun; Tumuluri, Uma; Wu, Zili; ...

2015-09-25

Here, high-surface-area nanosized CeO 2 and M-doped CeO 2 (M=Cu, La, Zr, and Mg) prepared by a surfactant-templated method were tested for CO 2 adsorption. Cu, La, and Zr are doped into the lattice of CeO 2, whereas Mg is dispersed on the CeO 2 surface. The doping of Cu and La into CeO 2 leads to an increase of the CO 2 adsorption capacity, whereas the doping of Zr has little or no effect. The addition of Mg causes a decrease of the CO 2 adsorption capacity at a low Mg content and a gradual increase at a highermore » content. The CO 2 adsorption capacity follows the sequence Cu-CeO 2>La-CeO 2>Zr-CeO 2≈CeO 2>Mg-CeO 2 at low dopant contents, in line with the relative amount of defect sites in the samples. It is the defect sites on the surface, not in the bulk of CeO 2, modified by the dopants that play the vital role in CO 2 chemisorption. Lastly, the role of surface oxygen vacancies is further supported by an in situ IR spectroscopic study of the surface chemistry during CO 2 adsorption on the doped CeO 2.« less

Magnetic ordered mesoporous Fe3O4/CeO2 composites with synergy of adsorption and Fenton catalysis

NASA Astrophysics Data System (ADS)

Li, Keyan; Zhao, Yongqin; Song, Chunshan; Guo, Xinwen

2017-12-01

Magnetic Fe3O4/CeO2 composites with highly ordered mesoporous structure and large surface area were synthesized by impregnation-calcination method, and the mesoporous CeO2 as support was synthesized via the hard template approach. The composition, morphology and physicochemical properties of the materials were characterized by XRD, SEM, TEM, XPS, Raman spectra and N2 adsorption/desorption analysis. The mesoporous Fe3O4/CeO2 composite played a dual-function role as both adsorbent and Fenton-like catalyst for removal of organic dye. The methylene blue (MB) removal efficiency of mesoporous Fe3O4/CeO2 was much higher than that of irregular porous Fe3O4/CeO2. The superior adsorption ability of mesoporous materials was attributed to the abundant oxygen vacancies on the surface of CeO2, high surface area and ordered mesoporous channels. The good oxidative degradation resulted from high Ce3+ content and the synergistic effect between Fe and Ce. The mesoporous Fe3O4/CeO2 composite presented low metal leaching (iron 0.22 mg L-1 and cerium 0.63 mg L-1), which could be ascribed to the strong metal-support interactions for dispersion and stabilization of Fe species. In addition, the composite can be easily separated from reaction solution with an external magnetic field due to its magnetic property, which is important to its practical applications.

Enhancement of photocatalytic activity of combustion-synthesized CeO2/C3N4 nanoparticles

NASA Astrophysics Data System (ADS)

Li, Dong-Feng; Yang, Ke; Wang, Xiao-qin; Ma, Ya-Li; Huang, Gui-Fang; Huang, Wei-Qing

2015-09-01

Nanocrystalline CeO2/C3N4 was synthesized via a one-step solution combustion method using urea as fuel for the first time. The effects of the molar ratio of urea to cerium chloride on the photocatalytic activity of the synthesized samples were investigated. The synthesized nanocrystalline CeO2/C3N4 shows small size and large surface exposure area. Photocatalytic degradation of methylene blue demonstrates that the synthesized nanocrystalline CeO2/C3N4 possesses enhanced photocatalytic activity. It is proposed that the enhanced photocatalytic activity might be related to the favorable morphology and structure, and the effective charge separation between C3N4 and CeO2 in the photocatalytic process.

[Effects of colorants on yttria stabilized tetragonal zirconia polycrystals powder].

PubMed

Wang, Bo; Chen, Jianfeng; Zhang, Yanchun; Wang, Ru

2015-10-01

To evaluate the effect of Fe2O3 and CeO2 as colorants on yttria stabilized tetragonal zirconia poly-crystals (Y-TZP) powder. The spray granulation slurry of colored zirconia was prepared with different concentrations of Fe2O3 (0.15%) and CeO2 (4%), which were added in Y-TZP. Zirconia powder was made by spray granulation. The powder specimens were divided into three groups: uncolored zirconia, Fe2O3 (0.15%) zirconia, and CeO2 (4%) zirconia. The particle morphologies of the powder specimens were measured with a laser particle size analyzer and an optical microscope. The differences in D50 among the three groups were statistically significant (P<0.05). Group Fe2O3 showed a significant difference from groups CeO2 and uncolored zirconia (P<0.05). Group uncolored zirconia showed no significant difference from group CeO2 (P>0.05). Mostly spherical powder was observed in the three groups. Fe2O3 as a colorant can affect particles, whereas CeO2 has no effect.

Simultaneous electrochemical detection of dopamine and uric acid over ceria supported three dimensional gold nanoclusters

NASA Astrophysics Data System (ADS)

Palanisamy, Sivakumar

2014-12-01

CeO2 is well known for being an active material to support the growth of Au nanoclusters (Au NCs). In this work, three dimensional (3D) Au NCs were deposited on three different shaped CeO2 nanostructures such as nanoparticles (NPs), nanorod arrays (NRAs) and nanoflowers (NFs) modified Ti substrate for electrochemical simultaneous detection of dopamine (DA) and uric acid (UA). The electrodeposition of 3D Au NCs were carried out via cyclic voltammetric (CV) method at over-potential, while CeO2 nanostructures were deposited by galvanostatic constant current method under the optimized conditions. The morphology and elemental composition analysis of 3D Au NCs with CeO2 nanostructures were characterized by SEM, XRD, XPS and EDAX measurements. The electrocatalytic activity of 3D Au NCs on different CeO2 supports were thoroughly investigated by using voltammetric and amperometric techniques. According to the obtained results, CeO2 NPs supported 3D Au NCs (3D Au NCs@CeO2 NPs) displayed strong signal for DA as compared to that of CeO2 NRAs (3D Au NCs@CeO2 NRAs) and CeO2 NFs supported 3D Au NCs (3D Au NCs@CeO2 NFs). In addition, the 3D Au NCs@CeO2 NPs electrode resulted in more sensitive and simultaneous detection of DA in the presence of excess UA. Thus, the 3D Au NCs@CeO2 NPs electrode can practically be applied for the detection of DA using biological samples.

Electronic, magnetic and optical properties of C- and N-doped CeO2 bulk and (111) surface from first-principles

NASA Astrophysics Data System (ADS)

Dai, Shuhua; Zhou, Wei; Liu, Yanyu; Lu, Yi-Lin; Sun, Lili; Wu, Ping

2018-05-01

The electronic, magnetic and optical properties of C- and N-doped CeO2 bulk and (111) surface have been systematically investigated by first-principles calculations. The results show that the spin splitting occurs when doping atoms replace the anion sites in the CeO2 matrix, causing a local magnetic moment of 2.00, and 1.00 μB for C- and N-doping, respectively. The strong hybridization between dopants 2p and O 2p triplet-states around the Fermi level gives rise to the half-metallic character for doped bulk systems, while substitution onto the surface eliminates the degeneration of dopants 2p orbitals, which results in anisotropic spin atmosphere. Especially, owing to the low formation energy and available RTFM, N-doped CeO2 would be easily realized in the experiment and should also be wonderful candidate materials for oxide spintronics. In addition, compared with N-doped CeO2, the calculated optical properties reveal that C-doped CeO2 (111) surface is able to enhance the absorption of the visible light.

Substrate Structures For Growth Of Highly Oriented And/Or Epitaxial Layers Thereon

DOEpatents

Arendt, Paul N.; Foltyn, Stephen R.; Groves, James R.; Jia, Quanxi

2005-07-26

A composite substrate structure including a substrate, a layer of a crystalline metal oxide or crystalline metal oxynitride material upon the substrate, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the crystalline metal oxide or crystalline metal oxynitride material layer is provided together with additional layers such as one or more layers of a buffer material upon the oriented cubic oxide material layer. Jc's of 2.3×106 A/cm2 have been demonstrated with projected Ic's of 320 Amperes across a sample 1 cm wide for a superconducting article including a flexible polycrystalline metallic substrate, an inert oxide material layer upon the surface of the flexible polycrystalline metallic substrate, a layer of a crystalline metal oxide or crystalline metal oxynitride material upon the layer of the inert oxide material, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the crystalline metal oxide or crystalline metal oxynitride material layer, a layer of a buffer material upon the oriented cubic oxide material layer, and, a top-layer of a high temperature superconducting material upon the layer of a buffer material.

Adsorption behavior of lead on aquatic sediments contaminated with cerium dioxide nanoparticles.

PubMed

Wang, Chao; Fan, Xiulei; Wang, Peifang; Hou, Jun; Ao, Yanhui; Miao, Lingzhan

2016-12-01

Aquatic sediments serve as an important sink for engineered nanomaterials (ENMs), such as metal oxide nanoparticles (MeO NPs) and carbon nanotubes (CNTs). Owing to their remarkable properties, ENMs demonstrate significant potential to disturb the adsorption behavior of other contaminants in aquatic sediments, thereby altering the bioavailability and toxicity of these contaminants. Thus far, most studies have investigated the effect of CNTs on the adsorption of other contaminants on sediments. Cerium dioxide nanoparticles (CeO 2 NPs), as one of the important MeO NPs, are also inevitably discharged into aquatic sediments because of their widespread use. In this study, we investigated the adsorption behavior of Pb 2+ on sediments spiked with CeO 2 NPs at a weight ratio of 5.0%. The results showed that the adsorption rates at three stages occurring during adsorption clearly increase for sediments contaminated with CeO 2 NPs. Moreover, the results obtained from the adsorption isotherms indicated that the Langmuir isotherm model best fits the isotherm data for both sediments and those contaminated with CeO 2 NPs. After spiking the sediments with CeO 2 NPs, the theoretical maximum monolayer adsorption capacity (Q max ) for Pb 2+ increased from 4.433 to 4.995 mg/g and the Langmuir isotherm coefficient (K L ) decreased from 8.813 to 7.730 L/g. The effects of CeO 2 NPs on the surface charge and pore surface properties of sediments were also studied as these properties affect the adsorption of several chemicals in sediments. The results showed that pH zpc , S BET , S ext , and average pore size of sediments clearly decrease for sediments contaminated with CeO 2 NPs. Hence, the strong adsorption capacity of CeO 2 NPs and the changes of sediment surface charge and pore surface properties caused by CeO 2 NPs are important factors affecting the adsorption behavior of Pb 2+ . The potential risk of Pb 2+ in aquatic environment may increase with CeO 2 NPs buried in sediments. Copyright © 2016 Elsevier Ltd. All rights reserved.

Hexagonal CeO2 nanostructures: an efficient electrode material for supercapacitors.

PubMed

Maheswari, Nallappan; Muralidharan, Gopalan

2016-09-28

Cerium oxide (CeO2) has emerged as a new and promising pseudocapacitive material due to its prominent valance states and extensive applications in various fields. In the present study, hexagonal CeO2 nanostructures have been prepared via the hydrothermal method employing cationic surfactant cetyl trimethyl ammonium bromide (CTAB). CTAB ensures a slow rate of hydrolysis to form small sized CeO2 nanostructures. The role of calcination temperature on the morphological, structural, electrochemical properties and cyclic stability has been assessed for supercapacitor applications. The mesoscopic hexagonal architecture endows the CeO2 with not only a higher specific capacity, but also with an excellent rate capability and cyclability. When the charge/discharge current density is increased from 2 to 10 A g(-1) the reversible charge capacity decreased from 927 F g(-1) to 475 F g(-1) while 100% capacity retention at a high current density of 20 A g(-1) even after 1500 cycles could be achieved. Furthermore, the asymmetric supercapacitor based on CeO2 exhibited a significantly higher energy density of 45.6 W h kg(-1) at a power density of 187.5 W kg(-1) with good cyclic stability. The electrochemical richness of the CeO2 nanostructure makes it a suitable electrode material for supercapacitor applications.

A comparative study of CeO2-Al2O3 support prepared with different methods and its application on MoO3/CeO2-Al2O3 catalyst for sulfur-resistant methanation

NASA Astrophysics Data System (ADS)

Jiang, Minhong; Wang, Baowei; Yao, Yuqin; Li, Zhenhua; Ma, Xinbin; Qin, Shaodong; Sun, Qi

2013-11-01

The CeO2-Al2O3 supports prepared with impregnation (IM), deposition precipitation (DP), and solution combustion (SC) methods for MoO3/CeO2-Al2O3 catalyst were investigated in the sulfur-resistant methanation. The supports and catalysts were characterized by N2-physisorption, transmission electron microscopy (TEM), X-ray diffraction (XRD), Raman spectroscopy (RS), and temperature-programmed reduction (TPR). The N2-physisorption results indicated that the DP method was favorable for obtaining better textural properties. The TEM and RS results suggested that there is a CeO2 layer on the surface of the support prepared with DP method. This CeO2 layer not only prevented the interaction between MoO3 and γ-Al2O3 to form Al2(MoO4)3 species, but also improved the dispersion of MoO3 in the catalyst. Accordingly, the catalysts whose supports were prepared with DP method exhibited the best catalytic activity. The catalysts whose supports were prepared with SC method had the worst catalytic activity. This was caused by the formation of Al2(MoO4)3 and crystalline MoO3. Additionally, the CeO2 layer resulted in the instability of catalysts in reaction process. The increasing of calcination temperature of supports reduced the catalytic activity of all catalysts. The decrease extent of the catalysts whose supports were prepared with DP method was the lowest as the CeO2 layer prevented the interaction between MoO3 and γ-Al2O3.

Evaluation of Pd Nanoparticle-Decorated CeO2-MWCNT Nanocomposite as an Electrocatalyst for Formic Acid Fuel Cells

NASA Astrophysics Data System (ADS)

Saleem, Junaid; Safdar Hossain, SK.; Al-Ahmed, Amir; Rahman, Ateequr; McKay, Gordon; Hossain, Mohammed M.

2018-04-01

In this work, CeO2-modified Pd/CeO2-carbon nanotube (CNT) electrocatalyst for the electro-oxidation of formic acid has been investigated. The support CNT was first modified with different amounts (5-30 wt.%) of CeO2 using a precipitation-deposition method. The electrocatalysts were developed by dispersing Pd on the CeO2-CNT supports using the borohydride reduction method. The synthesized electrocatalysts were analyzed for composition, morphology and electronic structure using x-ray diffraction (XRD), scanning electron microscopy with energy-dispersive x-ray spectroscopy (SEM/EDX), transmission electron microscopy (TEM), x-ray photoelectron spectroscopy (XPS), and thermogravimetric analysis (TGA) techniques. The formation of Pd nanoparticles on the CeO2-CNT support was confirmed using TEM. The activity of Pd/CeO2-CNT and of Pd-CNT samples upon oxidation of formic acid was evaluated by using carbon monoxide stripping voltammetry, cyclic voltammetry, and chronoamperometry. The addition of moderate amounts of cerium oxide (up to 10 wt.%) significantly improved the activity of Pd/CeO2-CNT compared to the unmodified Pd-CNT. Pd/10 wt.% CeO2-CNT showed a current density of 2 A mg-1, which is ten times higher than that of the unmodified Pd-CNT (0.2 A mg-1). Similarly, the power density obtained for Pd/10 wt.% CeO2-CNT in an air-breathing formic acid fuel cell was 6.8 mW/cm2 which is two times higher than Pd-CNT (3.2 mW/cm2), thus exhibiting the promotional effects of CeO2 to Pd/CeO2-CNT. A plausible justification for the improved catalytic performance and stability is provided in the light of the physical characterization results.

Cleaved-edge-overgrowth nanogap electrodes.

PubMed

Luber, Sebastian M; Bichler, Max; Abstreiter, Gerhard; Tornow, Marc

2011-02-11

We present a method to fabricate multiple metal nanogap electrodes of tailored width and distance in parallel, on the cleaved plane of a GaAs/AlGaAs heterostructure. The three-dimensional patterned structures are obtained by a combination of molecular-beam-epitaxial regrowth on a crystal facet, using the cleaved-edge-overgrowth (CEO) method, and subsequent wet selective etching and metallization steps. SEM and AFM studies reveal smooth and co-planar electrodes of width and distance of the order of 10 nm. Preliminary electrical characterization indicates electrical gap insulation in the 100 MΩ range with kΩ lead resistance. We propose our methodology to realize multiple electrode geometries that would allow investigation of the electrical conductivity of complex nanoscale objects such as branched organic molecules.

Growth of High-Quality GaAs on Ge by Controlling the Thickness and Growth Temperature of Buffer Layer

NASA Astrophysics Data System (ADS)

Zhou, Xu-Liang; Pan, Jiao-Qing; Yu, Hong-Yan; Li, Shi-Yan; Wang, Bao-Jun; Bian, Jing; Wang, Wei

2014-12-01

High-quality GaAs thin films grown on miscut Ge substrates are crucial for GaAs-based devices on silicon. We investigate the effect of different thicknesses and temperatures of GaAs buffer layers on the crystal quality and surface morphology of GaAs on Ge by metal-organic chemical vapor deposition. Through high resolution x-ray diffraction measurements, it is demonstrated that the full width at half maximum for the GaAs epilayer (Ge substrate) peak could achieve 19.3 (11.0) arcsec. The value of etch pit density could be 4×104 cm-2. At the same time, GaAs surfaces with no pyramid-shaped pits are obtained when the buffer layer growth temperature is lower than 360°C, due to effective inhibition of initial nucleation at terraces of the Ge surface. In addition, it is shown that large island formation at the initial stage of epitaxial growth is a significant factor for the final rough surface and that this initial stage should be carefully controlled when a device quality GaAs surface is desired.

Synthesis of CeO2 nanoparticles: Photocatalytic and antibacterial activities

NASA Astrophysics Data System (ADS)

Reddy Yadav, L. S.; Lingaraju, K.; Daruka Prasad, B.; Kavitha, C.; Banuprakash, G.; Nagaraju, G.

2017-05-01

We have successfully synthesized CeO2 nanoparticles (Nps) via the solution combustion method using sugarcane juice as a novel combustible fuel. The structural features, optical properties and morphology of the nanoparticles were characterized using XRD, FTIR, and Raman spectroscopy, UV-Vis, SEM and TEM. Structural characterization of the product shows cubic phase CeO2 . FTIR and Raman spectrum show characteristic peaks due to the presence of Ce-O vibration. SEM images show a porous structure and, from TEM images, the size of the nanoparticles were found to be ˜ 50 nm. The photocatalytic degradation of the methylene blue (MB) dye was examined using CeO2 Nps under solar irradiation as well as UV light irradiation and we studied the effect of p H, catalytic load and concentration on the degradation of the MB dye. Furthermore, the antibacterial properties of CeO2 Nps were investigated against Gram+ve and Gram- ve pathogenic bacterial strains using the agar well diffusion method.

Biochemical effects of six TiO2 and four CeO2 nanomaterials in HepG2 cells

EPA Science Inventory

Biochemical effects of six TiO2 and four CeO2 nanomaterials in HepG2 cellsBecause of their growing number of uses, nanoparticles composed of CeO2 (cosmetics, polishing materials and automotive fuel additives) and TiO2 (pigments, sunscreens and photocatalysts) are of particular to...

Selective growth of Pb islands on graphene/SiC buffer layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, X. T.; Miao, Y. P.; Ma, D. Y.

2015-02-14

Graphene is fabricated by thermal decomposition of silicon carbide (SiC) and Pb islands are deposited by Pb flux in molecular beam epitaxy chamber. It is found that graphene domains and SiC buffer layer coexist. Selective growth of Pb islands on SiC buffer layer rather than on graphene domains is observed. It can be ascribed to the higher adsorption energy of Pb atoms on the 6√(3) reconstruction of SiC. However, once Pb islands nucleate on graphene domains, they will grow very large owing to the lower diffusion barrier of Pb atoms on graphene. The results are consistent with first-principle calculations. Sincemore » Pb atoms on graphene are nearly free-standing, Pb islands grow in even-number mode.« less

The effect of fission-energy Xe ion irradiation on the structural integrity and dissolution of the CeO2 matrix

NASA Astrophysics Data System (ADS)

Popel, A. J.; Le Solliec, S.; Lampronti, G. I.; Day, J.; Petrov, P. K.; Farnan, I.

2017-02-01

This work considers the effect of fission fragment damage on the structural integrity and dissolution of the CeO2 matrix in water, as a simulant for the UO2 matrix of spent nuclear fuel. For this purpose, thin films of CeO2 on Si substrates were produced and irradiated by 92 MeV 129Xe23+ ions to a fluence of 4.8 × 1015 ions/cm2 to simulate fission damage that occurs within nuclear fuels along with bulk CeO2 samples. The irradiated and unirradiated samples were characterised and a static batch dissolution experiment was conducted to study the effect of the induced irradiation damage on dissolution of the CeO2 matrix. Complex restructuring took place in the irradiated films and the irradiated samples showed an increase in the amount of dissolved cerium, as compared to the corresponding unirradiated samples. Secondary phases were also observed on the surface of the irradiated CeO2 films after the dissolution experiment.

Role of interfacial transition layers in VO2/Al2O3 heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, Honghui; Chisholm, Matthew F; Yang, Tsung-Han

2011-01-01

Epitaxial VO2 films grown by pulsed laser deposition (PLD) on c-cut sapphire substrates ((0001) Al2O3) were studied by aberration-corrected scanning transmission electron microscopy (STEM). A number of film/substrate orientation relationships were found and are discussed in the context of the semiconductor-metal transition (SMT) characteristics. A structurally and electronically modified buffer layer was revealed on the interface and was attributed to the interface free-energy minimization process of accommodating the symmetry mismatch between the substrate and the film. This interfacial transition layer is expected to affect the SMT behavior when the interfacial region is a significant fraction of the VO2 film thickness.

A Facile Method for Loading CeO2 Nanoparticles on Anodic TiO2 Nanotube Arrays.

PubMed

Liao, Yulong; Yuan, Botao; Zhang, Dainan; Wang, Xiaoyi; Li, Yuanxun; Wen, Qiye; Zhang, Huaiwu; Zhong, Zhiyong

2018-04-03

In this paper, a facile method was proposed to load CeO 2 nanoparticles (NPs) on anodic TiO 2 nanotube (NT) arrays, which leads to a formation of CeO 2 /TiO 2 heterojunctions. Highly ordered anatase phase TiO 2 NT arrays were fabricated by using anodic oxidation method, then these individual TiO 2 NTs were used as tiny "nano-containers" to load a small amount of Ce(NO 3 ) 3 solutions. The loaded anodic TiO 2 NTs were baked and heated to a high temperature of 450 °C, under which the Ce(NO 3 ) 3 would be thermally decomposed inside those nano-containers. After the thermal decomposition of Ce(NO 3 ) 3 , cubic crystal CeO 2 NPs were obtained and successfully loaded into the anodic TiO 2 NT arrays. The prepared CeO 2 /TiO 2 heterojunction structures were characterized by a variety of analytical technologies, including XRD, SEM, and Raman spectra. This study provides a facile approach to prepare CeO 2 /TiO 2 films, which could be very useful for environmental and energy-related areas.

Toxicity of CeO2 nanoparticles - the effect of nanoparticle properties.

PubMed

Leung, Yu Hang; Yung, Mana M N; Ng, Alan M C; Ma, Angel P Y; Wong, Stella W Y; Chan, Charis M N; Ng, Yip Hang; Djurišić, Aleksandra B; Guo, Muyao; Wong, Mabel Ting; Leung, Frederick C C; Chan, Wai Kin; Leung, Kenneth M Y; Lee, Hung Kay

2015-04-01

Conflicting reports on the toxicity of CeO2 nanomaterials have been published in recent years, with some studies finding CeO2 nanoparticles to be toxic, while others found it to have protective effects against oxidative stress. To investigate the possible reasons for this, we have performed a comprehensive study on the physical and chemical properties of nanosized CeO2 from three different suppliers as well as CeO2 synthesized by us, and tested their toxicity. For toxicity tests, we have studied the effects of CeO2 nanoparticles on a Gram-negative bacterium Escherichia coli in the dark, under ambient and UV illuminations. We have also performed toxicity tests on the marine diatom Skeletonema costatum under ambient and UV illuminations. We found that the CeO2 nanoparticle samples exhibited significantly different toxicity, which could likely be attributed to the differences in interactions with cells, and possibly to differences in nanoparticle compositions. Our results also suggest that toxicity tests on bacteria may not be suitable for predicting the ecotoxicity of nanomaterials. The relationship between the toxicity and physicochemical properties of the nanoparticles is explicitly discussed in the light of the current results. Copyright © 2015 Elsevier B.V. All rights reserved.

Fate and Phytotoxicity of CeO2 Nanoparticles on Lettuce Cultured in the Potting Soil Environment.

PubMed

Gui, Xin; Zhang, Zhiyong; Liu, Shutong; Ma, Yuhui; Zhang, Peng; He, Xiao; Li, Yuanyuan; Zhang, Jing; Li, Huafen; Rui, Yukui; Liu, Liming; Cao, Weidong

2015-01-01

Cerium oxide nanoparticles (CeO2 NPs) have been shown to have significant interactions in plants. Previous study reported the specific-species phytotoxicity of CeO2 NPs by lettuce (Lactuca sativa), but their physiological impacts and vivo biotransformation are not yet well understood, especially in relative realistic environment. Butterhead lettuce were germinated and grown in potting soil for 30 days cultivation with treatments of 0, 50, 100, 1000 mg CeO2 NPs per kg soil. Results showed that lettuce in 100 mg·kg-1 treated groups grew significantly faster than others, but significantly increased nitrate content. The lower concentrations treatment had no impact on plant growth, compared with the control. However, the higher concentration treatment significantly deterred plant growth and biomass production. The stress response of lettuce plants, such as Superoxide dismutase (SOD), Peroxidase (POD), Malondialdehyde(MDA) activity was disrupted by 1000 mg·kg-1 CeO2 NPs treatment. In addition, the presence of Ce (III) in the roots of butterhead lettuce explained the reason of CeO2 NPs phytotoxicity. These findings demonstrate CeO2 NPs modification of nutritional quality, antioxidant defense system, the possible transfer into the food chain and biotransformation in vivo.

Fate and Phytotoxicity of CeO2 Nanoparticles on Lettuce Cultured in the Potting Soil Environment

PubMed Central

Gui, Xin; Zhang, Zhiyong; Liu, Shutong; Ma, Yuhui; Zhang, Peng; He, Xiao; Li, Yuanyuan; Zhang, Jing; Li, Huafen; Rui, Yukui; Liu, Liming; Cao, Weidong

2015-01-01

Cerium oxide nanoparticles (CeO2 NPs) have been shown to have significant interactions in plants. Previous study reported the specific-species phytotoxicity of CeO2 NPs by lettuce (Lactuca sativa), but their physiological impacts and vivo biotransformation are not yet well understood, especially in relative realistic environment. Butterhead lettuce were germinated and grown in potting soil for 30 days cultivation with treatments of 0, 50, 100, 1000 mg CeO2 NPs per kg soil. Results showed that lettuce in 100 mg·kg-1 treated groups grew significantly faster than others, but significantly increased nitrate content. The lower concentrations treatment had no impact on plant growth, compared with the control. However, the higher concentration treatment significantly deterred plant growth and biomass production. The stress response of lettuce plants, such as Superoxide dismutase (SOD), Peroxidase (POD), Malondialdehyde(MDA) activity was disrupted by 1000 mg·kg-1 CeO2 NPs treatment. In addition, the presence of Ce (III) in the roots of butterhead lettuce explained the reason of CeO2 NPs phytotoxicity. These findings demonstrate CeO2 NPs modification of nutritional quality, antioxidant defense system, the possible transfer into the food chain and biotransformation in vivo. PMID:26317617

Promotional effect of Al2O3 on WO3/CeO2-ZrO2 monolithic catalyst for selective catalytic reduction of nitrogen oxides with ammonia after hydrothermal aging treatment

NASA Astrophysics Data System (ADS)

Xu, Haidi; Liu, Shuang; Wang, Yun; Lin, Qingjin; Lin, Chenlu; Lan, Li; Wang, Qin; Chen, Yaoqiang

2018-01-01

Hydrothermal stability of catalysts for selective catalytic reduction of NOx with NH3 (NH3-SCR) has always been recognized as a challenge in development of candidate catalysts for applications in diesel engine emissions. In this study, Al2O3 was introduced into CeO2-ZrO2 to improve the NH3-SCR activity of WO3/CeO2-ZrO2 after hydrothermal aging (HA) treatment at 800 °C for 12 h. The activity results indicated that the NH3-SCR activity of WO3/CeO2-ZrO2-HA was obviously improved in the whole reaction temperature range after doping Al2O3 into CeO2-ZrO2, for example, the average and maximum NOx conversion were separately increased by ca. 20% and 25% after HA treatment. XRD, Raman, TEM and EDX results revealed that the introduction of Al2O3 inhibited the sintering and agglomeration of CeO2-ZrO2 and WO3 and the formation of Ce2(WO4)3 after HA treatment. Accordingly, WO3/CeO2-ZrO2-Al2O3-HA showed remarkably improved structural stability and reducibility, increased surface acidity, and facilitated the reactivity between adsorbed NH3 and nitrate species, which together contributed to its better catalytic performance after hydrothermal aging treatment.

Sr(1.7)Zn(0.3)CeO4: Eu3+ novel red-emitting phosphors: synthesis and photoluminescence properties.

PubMed

Li, Haifeng; Zhao, Ran; Jia, Yonglei; Sun, Wenzhi; Fu, Jipeng; Jiang, Lihong; Zhang, Su; Pang, Ran; Li, Chengyu

2014-03-12

A series of novel red-emitting Sr1.7Zn0.3CeO4:Eu(3+) phosphors were synthesized through conventional solid-state reactions. The powder X-ray diffraction patterns and Rietveld refinement verified the similar phase of Sr1.7Zn0.3CeO4:Eu(3+) to that of Sr2CeO4. The photoluminescence spectrum exhibits that peak located at 614 nm ((5)D0-(7)F2) dominates the emission of Sr1.7Zn0.3CeO4:Eu(3+) phosphors. Because there are two regions in the excitation spectrum originating from the overlap of the Ce(4+)-O(2-) and Eu(3+)-O(2-) charge-transfer state band from 200 to 440 nm, and from the intra-4f transitions at 395 and 467 nm, the Sr1.7Zn0.3CeO4:Eu(3+) phosphors can be well excited by the near-UV light. The investigation of the concentration quenching behavior, luminescence decay curves, and lifetime implies that the dominant mechanism type leading to concentration quenching is the energy transfer among the nearest neighbor or next nearest neighbor activators. The discussion about the dependence of photoluminescence spectra on temperature shows the better thermal quenching properties of Sr1.7Zn0.3CeO4:0.3Eu(3+) than that of Sr2CeO4:Eu(3+). The experimental data indicates that Sr1.7Zn0.3CeO4:Eu(3+) phosphors have the potential as red phosphors for white light-emitting diodes.

Different heat treatment of CeO2 nanoparticle composited with ZnO to enhance photocatalytic performance

NASA Astrophysics Data System (ADS)

Taufik, A.; Shabrany, H.; Saleh, R.

2017-04-01

In this study, ZnO/CeO2 nanocomposites were prepared with four variations of the molar ratio of ZnO to CeO2 nanoparticles. Both ZnO and CeO2 nanoparticles were synthesized using the sol-gel method at low temperature, followed by different heat treatments for CeO2 nanoparticles. Thermal phase transformation studies of the CeO2 nanoparticles were observed at annealing temperatures of 400-800°C. The complete crystalline structure of CeO2 nanoparticles was obtained at an annealing temperature of 800°C. The structural and optical properties of all samples were observed using several characterization techniques, such as X-ray diffraction (XRD), ultraviolet-visible diffuse reflectance spectroscopy, and Brunauer, Emmett, and Teller (BET) surface area analysis. The structural characterization results revealed that the prepared CeO2 nanoparticles were quite crystalline, with a cubic structure. The photocatalytic activities of all samples were tested under visible irradiation. The obtained results showed that ZnO/CeO2 nanocomposites with a molar ratio 1:0.3 exhibited the highest photocatalytic activity. Further understanding of the role of primary active species underlying the reaction mechanism involved in photocatalytic activity were carried out in controlled experiments by adding several scavengers. The detailed mechanism and its correlation with the properties of ZnO/CeO2 nanocomposites were discuss.

CeO2 nanoparticles induce no changes in phenanthrene toxicity to the soil organisms Porcellionides pruinosus and Folsomia candida.

PubMed

Tourinho, Paula S; Waalewijn-Kool, Pauline L; Zantkuijl, Irene; Jurkschat, Kerstin; Svendsen, Claus; Soares, Amadeu M V M; Loureiro, Susana; van Gestel, Cornelis A M

2015-03-01

Cerium oxide nanoparticles (CeO2 NPs) are used as diesel fuel additives to catalyze oxidation. Phenanthrene is a major component of diesel exhaust particles and one of the most common pollutants in the environment. This study aimed at determining the effect of CeO2 NPs on the toxicity of phenanthrene in Lufa 2.2 standard soil for the isopod Porcellionides pruinosus and the springtail Folsomia candida. Toxicity tests were performed in the presence of CeO2 concentrations of 10, 100 or 1000mg Ce/kg dry soil and compared with results in the absence of CeO2 NPs. CeO2 NPs had no adverse effects on isopod survival and growth or springtail survival and reproduction. For the isopods, LC50s for the effect of phenanthrene ranged from 110 to 143mg/kg dry soil, and EC50s from 17.6 to 31.6mg/kg dry soil. For the springtails, LC50s ranged between 61.5 and 88.3mg/kg dry soil and EC50s from 52.2 to 76.7mg/kg dry soil. From this study it may be concluded that CeO2 NPs have a low toxicity and do not affect toxicity of phenanthrene to isopods and springtails. Copyright © 2014 Elsevier Inc. All rights reserved.

Synthesis and characterization of reduced graphene oxide decorated with CeO2-doped MnO2 nanorods for supercapacitor applications.

PubMed

Ojha, Gunendra Prasad; Pant, Bishweshwar; Park, Soo-Jin; Park, Mira; Kim, Hak-Yong

2017-05-15

A novel and efficient CeO 2 -doped MnO 2 nanorods decorated reduced graphene oxide (CeO 2 -MnO 2 /RGO) nanocomposite was successfully synthesized via hydrothermal method. The growth of the CeO 2 doped MnO 2 nanorods over GO sheets and reduction of GO were simultaneously carried out under hydrothermal treatment. The morphology and structure of as-synthesized nanocomposite were characterized by field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD), and Raman spectroscopy, which revealed the formation of CeO 2 -MnO 2 decorated RGO nanocomposites. The electrochemical performance of as-prepared CeO 2 -MnO 2 /RGO nanocomposites as an active electrode material for supercapacitor was evaluated by cyclic voltammetry, charge-discharge, and electrochemical impedance spectroscopy (EIS) methods in 2M alkaline medium. The obtained results revealed that as-synthesized CeO 2 -MnO 2 /RGO nanocomposite exhibited higher specific capacitance (648F/g) as compared to other formulations (MnO 2 /RGO nanocomposites: 315.13 F/g and MnO 2 nanorods: 228.5 F/g) at the scan rate of 5mV/s. After 1000 cycles, it retained ∼90.4%, exhibiting a good stability. The high surface area, enhanced electrical conductivity, and good stability possess by the nanocomposite make this material a promising candidate to be applied as a supercapacitor electrode. Copyright © 2017 Elsevier Inc. All rights reserved.

Comparison of preparation methods for ceria catalyst and the effect of surface and bulk sulfates on its activity toward NH3-SCR.

PubMed

Chang, Huazhen; Ma, Lei; Yang, Shijian; Li, Junhua; Chen, Liang; Wang, Wei; Hao, Jiming

2013-11-15

A series of CeO2 catalysts prepared with sulfate (S) and nitrate (N) precursors by hydrothermal (H) and precipitation (P) methods were investigated in selective catalytic reduction of NOx by NH3 (NH3-SCR). The catalytic activity of CeO2 was significantly affected by the preparation methods and the precursor type. CeO2-SH, which was prepared by hydrothermal method with cerium (IV) sulfate as a precursor, showed excellent SCR activity and high N2 selectivity in the temperature range of 230-450 °C. Based on the results obtained by temperature-programmed reduction (H2-TPR), transmission infrared spectra (IR) and thermal gravimetric analysis (TGA), the excellent performance of CeO2-SH was correlated with the surface sulfate species formed in the hydrothermal reaction. These results indicated that sulfate species bind with Ce(4+) on the CeO2-SH catalyst, and the specific sulfate species, such as Ce(SO4)2 or CeOSO4, were formed. The adsorption of NH3 was promoted by these sulfate species, and the probability of immediate oxidation of NH3 to N2O on Ce(4+) was reduced. Accordingly, the selective oxidation of NH3 was enhanced, which contributed to the high N2 selectivity in the SCR reaction. However, the location of sulfate on the CeO2-SP catalyst was different. Plenty of sulfate species were likely deposited on CeO2-SP surface, covering the active sites for NO oxidation, which resulted in poor SCR activity in the test temperature range. Moreover, the resistance to alkali metals, such as Na and K, was improved over the CeO2-SH catalyst. Copyright © 2013 Elsevier B.V. All rights reserved.

Stabilization of miniemulsion droplets by cerium oxide nanoparticles: a step toward the elaboration of armored composite latexes.

PubMed

Zgheib, Nancy; Putaux, Jean-Luc; Thill, Antoine; D'Agosto, Franck; Lansalot, Muriel; Bourgeat-Lami, Elodie

2012-04-10

Stable methyl methacrylate (MMA) miniemulsions were successfully prepared using for the first time cerium oxide (CeO(2)) nanoparticles as solid stabilizers in the absence of any molecular surfactant. The interaction between MMA droplets and CeO(2) nanoparticles was induced by the use of methacrylic acid (MAA) as a comonomer. Both MAA and CeO(2) contents played a key role on the diameter and the stability of the droplets formed during the emulsification step. Cryo-transmission electron microscopy (TEM) images of the suspensions formed with 35 wt % of CeO(2) showed the presence of polydisperse 50-150 nm spherical droplets. More surprisingly, some nonspherical (likely discoidal) objects that could be the result of the sonication step were also observed. The subsequent polymerization of these Pickering miniemulsion droplets led to the formation of composite PMMA latex particles armored with CeO(2). In all cases, the conversion was limited to ca. 85%, concomitant with a loss of stability of the latex for CeO(2) contents lower than 35 wt %. This stability issues were likely related to the screening of the cationic charges present on CeO(2) nanoparticles upon polymerization. TEM images showed mostly spherical particles with a diameter ranging from 100 to 400 nm and homogeneously covered with CeO(2). Besides, for particles typically larger than 200 nm, a buckled morphology was observed supporting the presence of residual monomer at the end of the polymerization and consistent with the limited conversion. The versatility of these systems was further demonstrated using 35 wt % of CeO(2) and replacing MMA by n-butyl acrylate (BA) either alone or in combination with MMA. Stable monomer emulsions were always obtained, with the droplet size increasing with the hydrophobicity of the oil phase, pointing out the key influence of the wettability of the solid stabilizer. The polymerization of Pickering miniemulsion stabilized by CeO(2) nanoparticles proved to be an efficient strategy to form armored composite latex particles which may find applications in coating technology. © 2012 American Chemical Society

Theoretical Investigation of the Structural Stabilities of Ceria Surfaces and Supported Metal Nanocluster in Vapor and Aqueous Phases

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ren, Zhibo; Liu, Ning; Chen, Biaohua

Understanding the structural stability and dynamics at the interface between the solid metal oxide and aqueous phase is significant in a variety of industrial applications including heterogeneous catalysis and environmental remediation. In the present work, the stabilities of three low-index ceria (CeO2) surfaces, i.e., (111), (110) and (100) in vapor and aqueous phases were studied using ab initio molecular dynamics simulations and density functional theory (DFT) calculations. Gibbs surface free energies as a function of temperature, water partial pressure, and water coverages were calculated using DFT based atomistic thermodynamic approach. On the basis of surface free energies, the morphology andmore » exposed surface structures of the CeO2 nanoparticle were predicted using Wulff construction principle. It is found that the partially hydroxylated (111) and (100) are two major surface structures of CeO2 nanoparticles in vapor phase at ambient temperature (300 K). As the temperature increases, the fully dehydrated (111) surface gradually becomes the most dominant surface structure. While in aqueous phase, the exposed surface of the CeO2 nanoparticle is dominated by the hydroxylated (110) structure at 393 K. Finally, the morphology and stability of a cuboctahedron Pt13 nanocluster supported on CeO2 surfaces in both gas and aqueous phases were investigated. In gas phase, the supported Pt13 nanocluster has the tendency to wetting the CeO2 surface due to the strong metal-support interaction. The calculated interaction energies suggest the CeO2(110) surface provides the best stability for the Pt13 nanocluster. The CeO2 supported Pt13 nanoclusters are oxidized. Compared to the gas phase, the morphology of the CeO2 supported Pt13 nanocluster is less distorted due to the solvation effect provided by surrounding water molecules in aqueous phase. More electrons are transferred from the Pt13 nanocluster to the CeO2 support, implying the supported Pt13 nanocluster is further oxidized in aqueous phase.« less

CEO performance appraisal: review and recommendations.

PubMed

Newman, J F; Tyler, L; Dunbar, D M

2001-01-01

CEO performance appraisal (PA) is very valuable to an organization, but the chances of obtaining a PA of high quality decrease as executive responsibility increases. The realities of CEO PA are that it: (1) is inevitable; (2) is creative and complex; (3) involves politics; and (4) has a significant effect on the organization and the executive. PA is conducted for legal and social requirements, to enhance communication, to provide opportunities for improvement, and to relate performance to compensation. This article discusses several problems with chief executive officer (CEO) PA and the contemporary approaches that seek to improve it. Three fundamental areas for evaluation are identified: (1) organizational success; (2) areawide health status; and (3) professional role fulfillment. These provide an outline for successful healthcare PA. In addition to a discussion of the strategic considerations behind a successful CEO PA system, several recommendations are offered for the implementation of the annual evaluation process. The final goal of CEO PA is to link its results to CEO incentive compensation. It is strongly recommended that some portion of the CEO's salary directly hinge on his performance in two critical areas: organizational effectiveness and community health status.

Structural and electrical properties of epitaxial YBCO films on Si (Abstract Only).

NASA Astrophysics Data System (ADS)

Fork, David K.; Barrera, A.; Phillips, Julia M.; Newman, N.; Fenner, David B.; Geballe, Theodore H.; Connell, G. A. N.; Boyce, James B.

1991-03-01

Efforts to grow high quality films of YBCO on Si have been complicated by factors discussed in Ref. 1, chief among them being the reaction between YBCO and Si, which is damaging even at 550 C. This is well below the customary temperatures for YBCO film growth. To avoid the reaction problem, epitaxial YBCO films were grown on Si (100) using an intermediate buffer layer of yttria-stabilized zirconia (YSZ).2 Both layers are grown via an entirely in situ process by pulsed laser deposition (PLD). Although the buffer layer prevents reaction, another problem arises; the large difference in thermal expansion coefficients between silicon and YBCO causes strain at room temperature. Thin (<500 A) YBCO films are unrelaxed and under tensile strain with a distorted unit cell. Thicker films are cracked and have poorer electrical properties. The thermal strain may be reduced by growing on silicon-on-sapphire (SOS) rather than silicon.3 This allows the growth of films of arbitrary thickness. Ion channeling reveals a high degree of crystalline perfection with a channeling minimum yield for Ba as low as 12% on either silicon or SOS. The normal state resistivity is 250-300 i-cm at 300 K; the critical temperature, Tc (R=0), is 86-88 K with a transition width (ATc) of I K. Critical current densities (J)°f 2x107 A/cm2 at 4.2 K and >2x106 A/cm2 at 77 K have been achieved. In addition, the surface resistance of a YBCO film on SOS was measured against Nb at 4.2 K. At 10 GHz, a value of 45 was obtained. This compares favorably to values reported for LaAlO3. Application of this technology to produce reaction patterned microstrip lines has been tested.4 This was done by ion milling away portions of the YSZ buffer layer prior to the YBCO deposition. YBCO landing on regions of exposed Si reacts to form an insulator. This technique was used to make 3 micron lines 1.5 mm long. The resulting structure had a Jc of l.6xl06 A/cm2 at 77 K. Isolation of separate structures exceeded 20 M. Several advantages of this technique are that no solvents, etchants or photoresist come into contact with the YBCO, hence this technique has a potential for operational-asgrown devices. In summary, it is now possible to produce YBCO films with structural and DC electrical properties which rival the most optimized c-axis epitaxial YBCO films on MgO, SrTiO3 and LaAlO3. Preliminary measurements of microwave properties appear promising. We thank Bruce Lairson for help obtaining magnetization data and Richard Johnson, Steve Ready and Lars-Erik Swartz for technical assistance. This work benefits from AFOSR (F49620-89-C-0017). DBF received support from NSF (DMR- 8822353). DKF acknowledges the AT&T scholarship.

Incorporation of cerium oxide into hydroxyapatite coating regulates osteogenic activity of mesenchymal stem cell and macrophage polarization.

PubMed

Li, Kai; Shen, Qingyi; Xie, Youtao; You, Mingyu; Huang, Liping; Zheng, Xuebin

2017-02-01

Biomedical coatings for orthopedic implants should facilitate osseointegration and mitigate implant-induced inflammatory reactions. Cerium oxide (CeO 2 ) ceramics possess anti-oxidative properties and can be used to decrease mediators of inflammation, which makes them attractive for biomedical applications. In our work, two kinds of CeO 2 incorporated hydroxyapatite coatings (HA-10Ce and HA-30Ce) were prepared via plasma spraying technique and the effects of CeO 2 addition on the responses of bone mesenchymal stem cells (BMSCs) and RAW264.7 macrophages were investigated. An increase in CeO 2 content in the HA coatings resulted in better osteogenic behaviors of BMSCs in terms of cell proliferation, alkaline phosphatase (ALP) activity and mineralized nodule formation. RT-PCR and western blot analysis suggested that the incorporation of CeO 2 may promote the osteogenic differentiation of BMSCs through the Smad-dependent BMP signaling pathway, which activated Runx2 expression and subsequently enhanced the expression of ALP and OCN. The expression profiles of macrophages cultured on the CeO 2 modified coating revealed a tendency toward a M2 phenotype, because of an upregulation of M2 surface markers (CD163 and CD206), anti-inflammatory cytokines (TNF-α and IL-6) and osteoblastogenesis-related genes (BMP2 and TGF-β1) as well as a downregulation of M1 surface markers (CCR7 and CD11c), proinflammatory cytokines (IL-10 and IL-1ra) and reactive oxygen species production. The results suggested the regulation of BMSCs behaviors and macrophage-mediated responses at the coating's surface were associated with CeO 2 incorporation. The incorporation of CeO 2 in HA coatings can be a valuable strategy to promote osteogenic responses and reduce inflammatory reactions.

Extended wavelength mid-infrared photoluminescence from type-I InAsN and InGaAsN dilute nitride quantum wells grown on InP

NASA Astrophysics Data System (ADS)

Wheatley, R.; Kesaria, M.; Mawst, L. J.; Kirch, J. D.; Kuech, T. F.; Marshall, A.; Zhuang, Q. D.; Krier, A.

2015-06-01

Extended wavelength photoluminescence emission within the technologically important 2-5 μm spectral range has been demonstrated from InAs1-xNx and In1-yGayAs1-xNx type I quantum wells grown onto InP. Samples containing N ˜ 1% and 2% exhibited 4 K photoluminescence emission at 2.0 and 2.7 μm, respectively. The emission wavelength was extended out to 2.9 μm (3.3 μm at 300 K) using a metamorphic buffer layer to accommodate the lattice mismatch. The quantum wells were grown by molecular beam epitaxy and found to be of a high structural perfection as evidenced in the high resolution x-ray diffraction measurements. The photoluminescence was more intense from the quantum wells grown on the metamorphic buffer layer and persisted up to room temperature. The mid-infrared emission spectra were analysed, and the observed transitions were found to be in good agreement with the calculated emission energies.

Z-schematic water splitting by the synergistic effect of a type-II heterostructure and a highly efficient oxygen evolution catalyst

NASA Astrophysics Data System (ADS)

Li, Xiaoyun; Hu, Haihua; Xu, Lingbo; Cui, Can; Qian, Degui; Li, Shuang; Zhu, Wenzhe; Wang, Peng; Lin, Ping; Pan, Jiaqi; Li, Chaorong

2018-05-01

Artificial Z-scheme system inspired by the natural photosynthesis in green plants has attracted extensive attention owing to its advantages such as simultaneously wide range light absorption, highly efficient charge separation and strong redox ability. In this paper, we report the synthesis of a novel all-solid-state direct Z-scheme photocatalyst of Ag3PO4/CeO2/TiO2 by depositing Ag3PO4 nanoparticles (NPs) on CeO2/TiO2 hierarchical branched nanowires (BNWs), where the CeO2/TiO2 BNWs act as a novel substrate for the well dispersed nano-size Ag3PO4. The Ag3PO4/CeO2/TiO2 photocatalyst exhibits excellent ability of photocatalytic oxygen evolution from pure water splitting. It is suggested that the Z-scheme charge transfer route between CeO2/TiO2 and Ag3PO4 improves the redox ability. On the other hand, the cascade energy level alignment in CeO2/TiO2 BNWs expedites the spatial charge separation, and hence suppresses photocatalytic backward reaction. However, it is difficult to realize a perfect excitation balance in Ag3PO4/CeO2/TiO2 and the composite still surfers photo-corrosion in photocatalysis reaction. Nevertheless, our results provide an innovative strategy of constructing a Z-scheme system from a type-II heterostructure and a highly efficient oxygen evolution catalyst.

Improve electrochemical performance of CeO2 surface modification LiNi0.80Co0.15Al0.05O2 cathode material

NASA Astrophysics Data System (ADS)

Xia, Shubiao; Zhang, Yingjie; Dong, Peng; Zhang, Yannan

2014-06-01

Lithium ion battery cathode material LiNi0.8Co0.15Al0.05O2 cathode has successfully prepared by co-precipitation. CeO2 surface modification has improved LiNi0.80Co0.15Al0.05O2 electrochemical performance use sol-gel method and subsequent heat treatment at 600 °C for 5 h. Different to other conventional coating material, CeO2 coating layer can not only inhibit the reaction of the electrode and the electrolyte, but also can reduce the impedance of electron transfer due to its high conductivity, and inhibit the production of Ni2+ because of its high oxidation. The surface-modified and pristine LiNi0.80Co0.15Al0.05O2 powders are characterized by XRD, SEM, TEM, XPS, CV and DSC. When CeO2 coating is 0.02% (mole ratio), contrast to pristine NCA, the CeO2-coated NCA cathode exhibits no decrease in its initial specific capacity of 184 mAh g -1 (at 0.2 C) and excellent capacity retention (86% of its initial capacity at 1 C) between 2.75 and 4.3 V after 100 cycles. The results indicate that the CeO2 surface treatment should be an effective way to improve cycle properties due to CeO2 inhibit the electrodes and the electrolyte side effects.

Composition dependences of crystal structure and electrical properties of epitaxial Pb(Zr,Ti)O3 films grown on Si and SrTiO3 substrates

NASA Astrophysics Data System (ADS)

Okamoto, Shoji; Okamoto, Satoshi; Yokoyama, Shintaro; Akiyama, Kensuke; Funakubo, Hiroshi

2016-10-01

{100}-oriented Pb(Zr x ,Ti1- x )O3 (PZT) thin films of approximately 2 µm thickness and Zr/(Zr + Ti) ratios of 0.39-0.65 were epitaxially grown on (100)cSrRuO3//(100)SrTiO3 (STO) and (100)cSrRuO3//(100)cLaNiO3//(100)CeO2//(100)YSZ//(100)Si (Si) substrates having different thermal expansion coefficients by pulsed metal-organic chemical vapor deposition (MOCVD). The effects of Zr/(Zr + Ti) ratio and type of substrate on the crystal structure and dielectric, ferroelectric and piezoelectric properties of the films were systematically investigated. The X-ray diffraction measurement showed that both films changed from having a tetragonal symmetry to rhombohedral symmetry through the coexisting region with increasing Zr/(Zr + Ti) ratio. This region showed the Zr/(Zr + Ti) ratios of 0.45-0.59 for the films on the STO substrates that were wider than the films on the Si substrates. Saturation polarization values were minimum at approximately Zr/(Zr + Ti) = 0.50 for the films on the STO substrates, and no obvious Zr/(Zr + Ti) ratio dependence was detected in the films on the Si substrates. On the other hand, the maximum field-induced strain values measured by scanning force microscopy at approximately Zr/(Zr + Ti) = 0.50 at 100 kV/cm were about 0.5 and 0.1% in the films on the Si and STO, respectively.

Phytotoxic Mechanism of Nanoparticles: Destruction of Chloroplasts and Vascular Bundles and Alteration of Nutrient Absorption

NASA Astrophysics Data System (ADS)

Nhan, Le Van; Ma, Chuanxin; Rui, Yukui; Liu, Shutong; Li, Xuguang; Xing, Baoshan; Liu, Liming

2015-06-01

This study focused on determining the phytotoxic mechanism of CeO2 nanoparticles (NPs): destroying chloroplasts and vascular bundles and altering absorption of nutrients on conventional and Bt-transgenic cottons. Experiments were designed with three concentrations of CeO2 NPs including: 0, 100 and 500 mg·L-1, and each treatment was three replications. Results indicate that absorbed CeO2 nanoparticles significantly reduced the Zn, Mg, Fe, and P levels in xylem sap compared with the control group and decreased indole-3-acetic acid (IAA) and abscisic acid (ABA) concentrations in the roots of conventional cotton. Transmission electron microscopy (TEM) images revealed that CeO2 NPs were absorbed into the roots and subsequently transported to the stems and leaves of both conventional and Bt-transgenic cotton plants via xylem sap. In addition, the majority of aggregated CeO2 NPs were attached to the external surface of chloroplasts, which were swollen and ruptured, especially in Bt-transgenic cotton. The vascular bundles were destroyed by CeO2 nanoparticles, and more damage was observed in transgenic cotton than conventional cotton.

Morphology of size-selected Ptn clusters on CeO2(111)

NASA Astrophysics Data System (ADS)

Shahed, Syed Mohammad Fakruddin; Beniya, Atsushi; Hirata, Hirohito; Watanabe, Yoshihide

2018-03-01

Supported Pt catalysts and ceria are well known for their application in automotive exhaust catalysts. Size-selected Pt clusters supported on a CeO2(111) surface exhibit distinct physical and chemical properties. We investigated the morphology of the size-selected Ptn (n = 5-13) clusters on a CeO2(111) surface using scanning tunneling microscopy at room temperature. Ptn clusters prefer a two-dimensional morphology for n = 5 and a three-dimensional (3D) morphology for n ≥ 6. We further observed the preference for a 3D tri-layer structure when n ≥ 10. For each cluster size, we quantitatively estimated the relative fraction of the clusters for each type of morphology. Size-dependent morphology of the Ptn clusters on the CeO2(111) surface was attributed to the Pt-Pt interaction in the cluster and the Pt-O interaction between the cluster and CeO2(111) surface. The results obtained herein provide a clear understanding of the size-dependent morphology of the Ptn clusters on a CeO2(111) surface.

Morphology of size-selected Ptn clusters on CeO2(111).

PubMed

Shahed, Syed Mohammad Fakruddin; Beniya, Atsushi; Hirata, Hirohito; Watanabe, Yoshihide

2018-03-21

Supported Pt catalysts and ceria are well known for their application in automotive exhaust catalysts. Size-selected Pt clusters supported on a CeO 2 (111) surface exhibit distinct physical and chemical properties. We investigated the morphology of the size-selected Pt n (n = 5-13) clusters on a CeO 2 (111) surface using scanning tunneling microscopy at room temperature. Pt n clusters prefer a two-dimensional morphology for n = 5 and a three-dimensional (3D) morphology for n ≥ 6. We further observed the preference for a 3D tri-layer structure when n ≥ 10. For each cluster size, we quantitatively estimated the relative fraction of the clusters for each type of morphology. Size-dependent morphology of the Pt n clusters on the CeO 2 (111) surface was attributed to the Pt-Pt interaction in the cluster and the Pt-O interaction between the cluster and CeO 2 (111) surface. The results obtained herein provide a clear understanding of the size-dependent morphology of the Pt n clusters on a CeO 2 (111) surface.

Regulating the surface of nanoceria and its applications in heterogeneous catalysis

NASA Astrophysics Data System (ADS)

Ma, Yuanyuan; Gao, Wei; Zhang, Zhiyun; Zhang, Sai; Tian, Zhimin; Liu, Yuxuan; Ho, Johnny C.; Qu, Yongquan

2018-03-01

Ceria (CeO2) as a support, additive, and active component for heterogeneous catalysis has been demonstrated to have great catalytic performance, which includes excellent thermal structural stability, catalytic efficiency, and chemoselectivity. Understanding the surface properties of CeO2 and the chemical reactions occurred on the corresponding interfaces is of great importance in the rational design of heterogeneous catalysts for various reactions. In general, the reversible Ce3+/Ce4+ redox pair and the surface acid-base properties contribute to the superior intrinsic catalytic capability of CeO2, and hence yield enhanced catalytic phenomenon in many reactions. Particularly, nanostructured CeO2 is characterized by a large number of surface-bound defects, which are primarily oxygen vacancies, as the surface active catalytic sites. Many efforts have therefore been made to control the surface defects and properties of CeO2 by various synthetic strategies and post-treatments. The present review provides a comprehensive overview of recent progress in regulating the surface structure and composition of CeO2 and its applications in catalysis.

A facile synthesis of high quality nanostructured CeO2 and Gd2O3-doped CeO2 solid electrolytes for improved electrochemical performance.

PubMed

Kuo, Yu-Lin; Su, Yu-Ming; Chou, Hung-Lung

2015-06-07

This study describes the use of a composite nitrate salt solution as a precursor to synthesize CeO2 and Gd2O3-doped CeO2 (GDC) nanoparticles (NPs) using an atmospheric pressure plasma jet (APPJ). The microstructures of CeO2 and GDC NPs were found to be cubical and spherical shaped nanocrystallites with average particle sizes of 10.5 and 6.7 nm, respectively. Reactive oxygen species, detected by optical emission spectroscopy (OES), are believed to be the major oxidative agents for the formation of oxide materials in the APPJ process. Based on the material characterization and OES observations, the study effectively demonstrated the feasibility of preparing well-crystallized GDC NPs by the APPJ system as well as the gas-to-particle mechanism. Notably, the Bader charge of CeO2 and Ce0.9Gd0.1O2 characterized by density function theory (DFT) simulation and AC impedance measurements shows that Gd helps in increasing the charge on Ce0.9Gd0.1O2 NPs, thus improving their conductivity and making them candidate materials for electrolytes in solid oxide fuel cells.

Independent Control of the Magnetization in Ferromagnetic La2/3Sr1/3MnO3/SrTiO3/LaCoO3 Heterostructures Achieved by Epitaxial Lattice Mismatch.

PubMed

Rivas-Murias, Beatriz; Lucas, Irene; Jiménez-Cavero, Pilar; Magén, César; Morellón, Luis; Rivadulla, Francisco

2016-03-09

We report the effect of interface symmetry-mismatch on the magnetic properties of LaCoO3 (LCO) thin films. Growing epitaxial LCO under tensile strain on top of cubic SrTiO3 (STO) produces a contraction along the c axis and a characteristic ferromagnetic response. However, we report here that ferromagnetism in LCO is completely suppressed when grown on top of a buffer layer of rhombohedral La2/3Sr1/3MnO3 (LSMO), in spite of identical in-plane and out-of-plane lattice deformation. This confirms that it is the lattice symmetry mismatch and not just the total strain, which determines the magnetism of LCO. On the basis of this control over the magnetic properties of LCO, we designed a multilayered structure to achieve independent rotation of the magnetization in ferromagnetic insulating LCO and half-metallic ferromagnet LSMO. This is an important step forward for the design of spin-filtering tunnel barriers based on LCO.

Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, X.; Nilsson, D.; Danielsson, Ö.

2015-12-28

The creation of a semi insulating (SI) buffer layer in AlGaN/GaN High Electron Mobility Transistor (HEMT) devices is crucial for preventing a current path beneath the two-dimensional electron gas (2DEG). In this investigation, we evaluate the use of a gaseous carbon gas precursor, propane, for creating a SI GaN buffer layer in a HEMT structure. The carbon doped profile, using propane gas, is a two stepped profile with a high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) epitaxial layer closest to the substrate and a lower doped layer (3 × 10{sup 16 }cm{sup −3}) closest to the 2DEG channel. Secondary Ion Mass Spectrometry measurement showsmore » a uniform incorporation versus depth, and no memory effect from carbon doping can be seen. The high carbon doping (1.5 × 10{sup 18 }cm{sup −3}) does not influence the surface morphology, and a roughness root-mean-square value of 0.43 nm is obtained from Atomic Force Microscopy. High resolution X-ray diffraction measurements show very sharp peaks and no structural degradation can be seen related to the heavy carbon doped layer. HEMTs are fabricated and show an extremely low drain induced barrier lowering value of 0.1 mV/V, demonstrating an excellent buffer isolation. The carbon doped GaN buffer layer using propane gas is compared to samples using carbon from the trimethylgallium molecule, showing equally low leakage currents, demonstrating the capability of growing highly resistive buffer layers using a gaseous carbon source.« less

New CeO2 nanoparticles-based topical formulations for the skin protection against organophosphates.

PubMed

Zenerino, Arnaud; Boutard, Tifenn; Bignon, Cécile; Amigoni, Sonia; Josse, Denis; Devers, Thierry; Guittard, Frédéric

2015-01-01

To reinforce skin protection against organophosphates (OPs), the development of new topical skin protectants (TSP) has received a great interest. Nanoparticles like cerium dioxide (CeO 2 ) known to adsorb and neutralize OPs are interesting candidates for TSP. However, NPs are difficult to disperse into formulations and they are suspected of toxicological issues. Thus, we want to study: (1) the effect of the addition of CeO 2 NPs in formulations for the skin protection (2) the impact of the doping of CeO 2 NPs by calcium; (3) the effect of two methods of dispersion of CeO 2 NPs: an O/W emulsion or a suspension of a fluorinated thickening polymer (HASE-F) grafted with these NPs. As a screening approach we used silicone membranes as a skin equivalent and Franz diffusion cells for permeation tests. The addition of pure CeO 2 NPs in both formulations permits the penetration to decrease by a 3-4-fold factor. The O/W emulsion allows is the best approach to obtain a film-forming coating with a good reproducibility of the penetration results; whereas the grafting of NPs to a thickener is the best way to obtain an efficient homogenous suspension of CeO 2 NPs with a decreased of toxicological impact but the coating is less film-forming which slightly impacts the reproducibility of the penetration results.

Investigation on charge transfer bands of Ce 4+ in Sr 2CeO 4 blue phosphor

NASA Astrophysics Data System (ADS)

Li, Ling; Zhou, Shihong; Zhang, Siyuan

2008-03-01

Bulk and nano-materials Sr2CeO4 were prepared by solid-state reaction and sol-gel technique, respectively. Photoluminescence shows that luminescence has the characteristic of a ligand-to-metal charge transfer (CT) emission. Compared with bulk Sr2CeO4, the nano-material exhibits stronger emission intensity, longer decay time, and higher CT excitation energy. Three CT excitation peaks were observed in both bulk and nano samples. Based on the theoretical calculations of the average energy gap of the chemical bond using the dielectric theory of complex crystal, the highest and the lowest energy CT bands were assigned to the transitions O1 → Ce4+ and O2 → Ce4+, respectively. The middle bands were due to the superposition of the transitions Ce-O1 and Ce-O2.

A facile method of fabricating mechanical durable anti-icing coatings based on CeO2 microparticles

NASA Astrophysics Data System (ADS)

Wang, Pengren; Peng, Chaoyi; Wu, Binrui; Yuan, Zhiqing; Yang, Fubiao; Zeng, Jingcheng

2015-07-01

Compromising between hydrophobicity and mechanical durability may be a feasible approach to fabricating usable anti-icing coatings. This work improves the contact angle of current commercial anti-icing coatings applied to wind turbine blades dramatically and keeps relatively high mechanical durability. CeO2 microparticles and diluent were mixed with fluorocarbon resin to fabricate high hydrophobic coatings on the glass fiber reinforced epoxy composite substrates. The proportion of CeO2 microparticles and diluent influences the contact angles significantly. The optimum mass ratio of fluorocarbon resin to CeO2 microparticles to diluent is 1:1.5:1, which leads to the highest contact angle close to 140°. The microscopy analysis shows that the CeO2 microparticles form nano/microscale hierarchical structure on the surface of the coatings.

Structure and enhanced thermochromic performance of low-temperature fabricated VO2/V2O3 thin film

NASA Astrophysics Data System (ADS)

Sun, Guangyao; Cao, Xun; Gao, Xiang; Long, Shiwei; Liang, Mengshi; Jin, Ping

2016-10-01

For VO2-based smart window manufacture, it is a long-standing demand for high-quality thin films deposited at low temperature. Here, the thermochromic films of VO2 were deposited by a magnetron sputtering method at a fairly low temperature of 250 °C without subsequent annealing by embedding a V2O3 interlayer. V2O3 acts as a seed layer to lower the depositing temperature and buffer layer to epitaxial grow VO2 film. The VO2/V2O3 films display high solar modulating ability and narrow hysteresis loop. Our data can serve as a promising point for industrial production with high degree of crystallinity at a low temperature.

Study of a MHEMT heterostructure with an In{sub 0.4}Ga{sub 0.6}As channel MBE-grown on a GaAs substrate using reciprocal space mapping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aleshin, A. N., E-mail: a.n.aleshin@mail.ru; Bugaev, A. S.; Ermakova, M. A.

2015-08-15

The crystallographic characteristics of the design elements of a metamorphic high-electron-mobility (MHEMT) heterostructure with an In{sub 0.4}Ga{sub 0.6}As channel are determined based on reciprocal space mapping. The heterostructure is grown by molecular beam epitaxy on the vicinal surface of a GaAs substrate with a deviation angle from the (001) plane of 2° and consists of a stepped metamorphic buffer containing six layers including an inverse step, a high-temperature buffer layer with constant composition, and active HEMT layers. The InAs content in the layers of the metamorphic buffer is varied from 0.1 to 0.48. Reciprocal space maps are constructed for themore » (004) symmetric reflection and (224)+ asymmetric reflection. It is found that the heterostructure layers are characterized both by a tilt angle relative to the plane of the (001) substrate and a rotation angle around the [001] axis. The tilt angle of the layer increases as the InAs concentration in the layer increases. It is shown that a high-temperature buffer layer of constant composition has the largest degree of relaxation compared with all other layers of the heterostructure.« less

Kinetics of self-induced nucleation and optical properties of GaN nanowires grown by plasma-assisted molecular beam epitaxy on amorphous Al{sub x}O{sub y}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sobanska, M., E-mail: sobanska@ifpan.edu.pl; Zytkiewicz, Z. R.; Klosek, K.

Nucleation kinetics of GaN nanowires (NWs) by molecular beam epitaxy on amorphous Al{sub x}O{sub y} buffers deposited at low temperature by atomic layer deposition is analyzed. We found that the growth processes on a-Al{sub x}O{sub y} are very similar to those observed on standard Si(111) substrates, although the presence of the buffer significantly enhances nucleation rate of GaN NWs, which we attribute to a microstructure of the buffer. The nucleation rate was studied vs. the growth temperature in the range of 720–790 °C, which allowed determination of nucleation energy of the NWs on a-Al{sub x}O{sub y} equal to 6 eV. Thismore » value is smaller than 10.2 eV we found under the same conditions on nitridized Si(111) substrates. Optical properties of GaN NWs on a-Al{sub x}O{sub y} are analyzed as a function of the growth temperature and compared with those on Si(111) substrates. A significant increase of photoluminescence intensity and much longer PL decay times, close to those on silicon substrates, are found for NWs grown at the highest temperature proving their high quality. The samples grown at high temperature have very narrow PL lines. This allowed observation that positions of donor-bound exciton PL line in the NWs grown on a-Al{sub x}O{sub y} are regularly lower than in samples grown directly on silicon suggesting that oxygen, instead of silicon, is the dominant donor. Moreover, PL spectra suggest that total concentration of donors in GaN NWs grown on a-Al{sub x}O{sub y} is lower than in those grown under similar conditions on bare Si. This shows that the a-Al{sub x}O{sub y} buffer efficiently acts as a barrier preventing uptake of silicon from the substrate to GaN.« less

A comparative investigation of SO2 oxidative transfer over CuO with a CeO2 surface

NASA Astrophysics Data System (ADS)

Liu, Yifeng; Shen, Benxian; Pi, Zhipeng; Chen, Hua; Zhao, Jigang

2017-04-01

To further improve the catalytic desulfurization function of the Mg-Al spinel sulfur transfer agent in a fluid catalytic cracking (FCC) unit, the reaction paths of SO2 oxidation by O2 over the metal oxide surface of CuO (111) and CeO2 (111) were investigated. In reference to the fact that SO2 reacting with O2 over CuO was a Mars-van Krevelen cycle, a similar reaction law for SO2 oxidation over CeO2 was also verified by characterization methods (e.g., IR, XPS). Meanwhile, the molecular simulation results indicated that the rate-control step of SO2 oxidation over CeO2 (111) and CuO (111) was a SO3 desorption step. The lower energy barrier in the rate-control step corresponded to better catalytic performance; hence, it could explain the reason that CeO2 had a better sulfur oxidization transfer performance than CuO.

Synthesis and Characterization of CeO2 Nanoparticles via Solution Combustion Method for Photocatalytic and Antibacterial Activity Studies

PubMed Central

Ravishankar, Thammadihalli Nanjundaiah; Ramakrishnappa, Thippeswamy; Nagaraju, Ganganagappa; Rajanaika, Hanumanaika

2015-01-01

CeO2 nanoparticles have been proven to be competent photocatalysts for environmental applications because of their strong redox ability, nontoxicity, long-term stability, and low cost. We have synthesized CeO2 nanoparticles via solution combustion method using ceric ammonium nitrate as an oxidizer and ethylenediaminetetraacetic acid (EDTA) as fuel at 450 °C. These nanoparticles exhibit good photocatalytic degradation and antibacterial activity. The obtained product was characterized by various techniques. X-ray diffraction data confirms a cerianite structure: a cubic phase CeO2 having crystallite size of 35 nm. The infrared spectrum shows a strong band below 700 cm−1 due to the Ce−O−Ce stretching vibrations. The UV/Vis spectrum shows maximum absorption at 302 nm. The photoluminescence spectrum shows characteristic peaks of CeO2 nanoparticles. Scanning electron microscopy (SEM) images clearly show the presence of a porous network with a lot of voids. From transmission electron microscopy (TEM) images, it is clear that the particles are almost spherical, and the average size of the nanoparticles is found to be 42 nm. CeO2 nanoparticles exhibit photocatalytic activity against trypan blue at pH 10 in UV light, and the reaction follows pseudo first-order kinetics. Finally, CeO2 nanoparticles also reduce CrVI to CrIII and show antibacterial activity against Pseudomonas aeruginosa. PMID:25969812

A facile growth process of CeO2-Co3O4 composite nanotubes and its catalytic stability for CO oxidation

NASA Astrophysics Data System (ADS)

Oh, Hyerim; Kim, Il Hee; Lee, Nam-Suk; Dok Kim, Young; Kim, Myung Hwa

2017-08-01

Hybrid cerium dioxide (CeO2)-cobalt oxide (Co3O4) composite nanotubes were successfully prepared by a combination of electrospinning and thermal annealing using CeO2 and Co3O4 precursors for the first time. Electrospun CeO2-Co3O4 composite nanotubes represent relatively porous surface texture with small dimensions between 80 and 150 nm in the outer diameter. The microscopic investigations indicate that the nanoparticle like crystalline structures of CeO2 and Co3O4 are homogenously distributed and continuously connected to form the shape of nanotube in the length of a few micrometers during thermal annealing. It is expected that the different evaporation behaviors of solvents and matrix polymer between the core and the shell in as-spun nanofibers in the course of thermal annealing could be reasonably responsible for the formation of well-defined CeO2/Co3O4 hybrid nanotubes. Additionally, the general catalytic activities of electrospun CeO2/Co3O4 hybrid nanotubes toward the oxidation of carbon monoxide (CO) were carefully examined by a continuous flow system, resulting in favorable catalytic activity as well as catalytic stability for CO oxidation between 150 °C and 200 °C without the deactivation of the catalyst with time stems from accumulation of reaction intermediates such as carbonate species.

Silica coating influences the corona and biokinetics of cerium oxide nanoparticles.

PubMed

Konduru, Nagarjun V; Jimenez, Renato J; Swami, Archana; Friend, Sherri; Castranova, Vincent; Demokritou, Philip; Brain, Joseph D; Molina, Ramon M

2015-10-12

The physicochemical properties of nanoparticles (NPs) influence their biological outcomes. We assessed the effects of an amorphous silica coating on the pharmacokinetics and pulmonary effects of CeO2 NPs following intratracheal (IT) instillation, gavage and intravenous injection in rats. Uncoated and silica-coated CeO2 NPs were generated by flame spray pyrolysis and later neutron-activated. These radioactive NPs were IT-instilled, gavaged, or intravenously (IV) injected in rats. Animals were analyzed over 28 days post-IT, 7 days post-gavage and 2 days post-injection. Our data indicate that silica coating caused more but transient lung inflammation compared to uncoated CeO2. The transient inflammation of silica-coated CeO2 was accompanied by its enhanced clearance. Then, from 7 to 28 days, clearance was similar although significantly more (141)Ce from silica-coated (35%) was cleared than from uncoated (19%) (141)CeO2 in 28 days. The protein coronas of the two NPs were significantly different when they were incubated with alveolar lining fluid. Despite more rapid clearance from the lungs, the extrapulmonary (141)Ce from silica-coated (141)CeO2 was still minimal (<1%) although lower than from uncoated (141)CeO2 NPs. Post-gavage, nearly 100% of both NPs were excreted in the feces consistent with very low gut absorption. Both IV-injected (141)CeO2 NP types were primarily retained in the liver and spleen. The silica coating significantly altered the plasma protein corona composition and enhanced retention of (141)Ce in other organs except the liver. We conclude that silica coating of nanoceria alters the biodistribution of cerium likely due to modifications in protein corona formation after IT and IV administration.

In-plane dielectric properties of epitaxial Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} thin films grown on GaAs for tunable device application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang Zhibin; Hao Jianhua

2012-09-01

We have epitaxially deposited ferroelectric Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} (BST) thin films grown on GaAs substrate via SrTiO{sub 3} buffer layer by laser molecular beam epitaxy. Structural characteristics of the heterostructure were measured by various techniques. The in-plane dielectric properties of the heteroepitaxial structure under different applying frequency were investigated from -190 to 90 Degree-Sign C, indicating Curie temperature of the BST film to be around 52 Degree-Sign C. At room temperature, the dielectric constant of the heterostructure under moderate dc bias field can be tuned by more than 30% and K factor used for frequency agile materials is foundmore » to be close to 8. Our results offer the possibility to combine frequency agile electronics of ferroelectric titanate with the high-performance microwave capabilities of GaAs for room temperature tunable device application.« less

Abbreviated epitaxial growth mode (AGM) method for reducing cost and improving quality of LEDs and lasers

DOEpatents

Tansu, Nelson; Chan, Helen M; Vinci, Richard P; Ee, Yik-Khoon; Biser, Jeffrey

2013-09-24

The use of an abbreviated GaN growth mode on nano-patterned AGOG sapphire substrates, which utilizes a process of using 15 nm low temperature GaN buffer and bypassing etch-back and recovery processes during epitaxy, enables the growth of high-quality GaN template on nano-patterned AGOG sapphire. The GaN template grown on nano-patterned AGOG sapphire by employing abbreviated growth mode has two orders of magnitude lower threading dislocation density than that of conventional GaN template grown on planar sapphire. The use of abbreviated growth mode also leads to significant reduction in cost of the epitaxy. The growths and characteristics of InGaN quantum wells (QWs) light emitting diodes (LEDs) on both templates were compared. The InGaN QWs LEDs grown on the nano-patterned AGOG sapphire demonstrated at least a 24% enhancement of output power enhancement over that of LEDs grown on conventional GaN templates.

New insight into the promoting role of process on the CeO₂-WO₃/TiO₂ catalyst for NO reduction with NH₃ at low-temperature.

PubMed

Zhang, Shule; Zhong, Qin; Shen, Yuge; Zhu, Li; Ding, Jie

2015-06-15

This study aimed at investigating the reason of high catalytic activity for CeO2-WO3/TiO2 catalyst from the aspects of WO3 interaction with other species and the NO oxidation process. Analysis by X-ray diffractometry, photoluminescence spectra, diffuse reflectance UV-visible, X-ray photoelectron spectroscopy, density functional theory calculations, electron paramagnetic resonance spectroscopy, temperature-programmed-desorption of NO and in situ diffuse reflectance infrared transform spectroscopy showed that WO3 could interact with CeO2 to improve the electron gaining capability of CeO2 species. In addition, WO3 species acted as electron donating groups to transfer the electrons to CeO2 species. The two aspects enhanced the formation of reduced CeO2 species to improve the formation of superoxide ions. Furthermore, the Ce species were the active sites for the NO adsorption and the superoxide ions over the catalyst needed oxidizing the adsorbed NO to improve the NO oxidation. This process was responsible for the high catalytic activity of CeO2-WO3/TiO2 catalyst. Copyright © 2015 Elsevier Inc. All rights reserved.

Synthesis of feather-like CeO2 microstructures and enzymatic electrochemical catalysis for trichloroacetic acid

NASA Astrophysics Data System (ADS)

Xiao, Xin; Zhang, Dong En; Zhang, Fan; Gong, Jun Yan; Zhang, Xiao Bo; Wang, Yi Hui; Ma, Juan Juan; Tong, Zhi Wei

Novel feather-like CeO2 microstructures were achieved by a thermal decomposition approach of Ce(OH)CO3 precursor. The Ce(OH)CO3 was obtained from a solvothermal method employing Ce(NO3)3.6H2O with C6H12N4 and C16H33(CH3)3NBr (CTAB) at 190∘C in a water-PEG-200 mixed solution. The feather-like CeO2 dendrite was obtained by thermal conversion of the feather-like Ce(OH)CO3 at 650∘C in air. A reasonable growth mechanism was proposed with the soft-template effect of PEG-200. The electrochemical behavior and enzyme activity of myoglobin (Mb) immobilized on CeO2-Nafion modified glassy carbon electrode (GCE) are demonstrated by cyclic voltammetric measurements. The results indicate that CeO2 can obviously promote the direct electron transfer between the Mb redox centers and the electrode. The Mb on CeO2-Nafion behaves as an elegant performance on the electrochemical reduction of trichloroacetic acid (TCA) from 0.32μM to 2.28μM. The detection limit is estimated to be 0.08μM.

Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bairamis, A.; Zervos, Ch.; Georgakilas, A., E-mail: alexandr@physics.uoc.gr

2014-09-15

AlN/GaN high electron mobility transistor (HEMT) structures with thin GaN/AlN buffer layer have been analyzed theoretically and experimentally, and the effects of the AlN barrier and GaN buffer layer thicknesses on two-dimensional electron gas (2DEG) density and transport properties have been evaluated. HEMT structures consisting of [300 nm GaN/ 200 nm AlN] buffer layer on sapphire were grown by plasma-assisted molecular beam epitaxy and exhibited a remarkable agreement with the theoretical calculations, suggesting a negligible influence of the crystalline defects that increase near the heteroepitaxial interface. The 2DEG density varied from 6.8 × 10{sup 12} to 2.1 × 10{sup 13} cm{sup −2} as themore » AlN barrier thickness increased from 2.2 to 4.5 nm, while a 4.5 nm AlN barrier would result to 3.1 × 10{sup 13} cm{sup −2} on a GaN buffer layer. The 3.0 nm AlN barrier structure exhibited the highest 2DEG mobility of 900 cm{sup 2}/Vs for a density of 1.3 × 10{sup 13} cm{sup −2}. The results were also confirmed by the performance of 1 μm gate-length transistors. The scaling of AlN barrier thickness from 1.5 nm to 4.5 nm could modify the drain-source saturation current, for zero gate-source voltage, from zero (normally off condition) to 0.63 A/mm. The maximum drain-source current was 1.1 A/mm for AlN barrier thickness of 3.0 nm and 3.7 nm, and the maximum extrinsic transconductance was 320 mS/mm for 3.0 nm AlN barrier.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Adhikari, R., E-mail: rajdeep.adhikari@jku.at; Capuzzo, G.; Bonanni, A., E-mail: alberta.bonanni@jku.at

Polarization induced degenerate n-type doping with electron concentrations up to ∼10{sup 20 }cm{sup −3} is achieved in graded Al{sub x}Ga{sub 1−x}N layers (x: 0% → 37%) grown on unintentionally doped and on n-doped GaN:Si buffer/reservoir layers by metal organic vapor phase epitaxy. High resolution x-ray diffraction, transmission electron microscopy, and electron dispersive x-ray spectroscopy confirm the gradient in the composition of the Al{sub x}Ga{sub 1−x}N layers, while Hall effect studies reveal the formation of a three dimensional electron slab, whose conductivity can be adjusted through the GaN(:Si) buffer/reservoir.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Grinter, David C.; Senanayake, Sanjaya D.; Flege, Jan Ingo

Ceria is an important material for chemical conversion processes in catalysis. Its intrinsic properties as a reducible oxide can be exploited to achieve catalytic selectivity and activity. However, numerous phenomenological characteristics of ceria remain unknown and its active nature is ever slowly being unraveled. Well defined models of ceria (111) are an important way to systematically study these properties and take advantage of new in situ methods that require pristine materials that allow for the interrogation of the most fundamental traits of this material. The ceria-Ru(0001) model is now the most well studied model surface with numerous aspects of itsmore » preparation, atomic structure and reactivity studied by several groups. The preparation of CeO x structures oriented with a (111) surface termination can be achieved through molecular beam deposition, facilitating the growth of well-defined nanostructures, microparticles, and films on the Ru(0001) surface. The growth mechanism exploits the epitaxial relationship between CeOx and Ru to form a carpet mode of well oriented layers of Osingle bondCesingle bondO. These models can be studied to unravel the atomic structure and the oxidation state (Ce 4+ and Ce 3+), as prepared and under redox conditions (reduction/oxidation) or with reaction using reactants (e.g., H 2, methanol). Here, we present a discussion of these most recent observations pertaining to the growth mode, arrangement of atoms on the surface, characteristic chemical state, and redox chemistry of the CeO x-Ru surface. As a result, with insights from these studies we propose new strategies to further unravel the chemistry of ceria.« less

Effects of strain and buffer layer on interfacial magnetization in Sr 2 CrReO 6 films determined by polarized neutron reflectometry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Yaohua; Lucy, J. M.; Glavic, A.

2014-09-01

We have determined the depth-resolved magnetization structures of a series of highly orderedSr2CrReO6 (SCRO) ferrimagnetic epitaxial films via combined studies of x-ray reflectometry, polarized neutron reflectometry and SQUID magnetometry. The SCRO films deposited directly on (LaAlO3)0:3(Sr2AlTaO6)0:7 or SrTiO3 substrates show reduced magnetization of similar width near the interfaces with the substrates, despite having different degrees of strain. When the SCRO film is deposited on a Sr2CrNbO6 (SCNO) double perovskite buffer layer, the width the interfacial region with reduced magnetization is reduced, agreeing with an improved Cr/Re ordering. However, the relative reduction of the magnetization averaged over the interfacial regions aremore » comparable among the three samples. Interestingly, we found that the magnetization suppression region is wider than the Cr/Re antisite disorder region at the interface between SCRO and SCNO.« less

An Evaluation of the Potential Phototoxicity of CeO2 Nanoparticles in Retinal Pigment Epithelial Cells in-vitro

EPA Science Inventory

Cerium dioxide (CeO2) engineered nanoparticles (NP) are used as fuel-borne catalysts in off-road diesel engines, which can lead to exhaust emissions of respirable CeO2 NP. Other metal oxides may act as photo-catalysts which induce the generation of free radicals upon exposure to ...

Study of the influence of strained superlattices introduced into a metamorphic buffer on the electrophysical properties and the atomic structure of InAlAs/InGaAs MHEMT heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Galiev, G. B.; Pushkarev, S. S., E-mail: s_s_e_r_p@mail.ru; Vasil'evskii, I. S.

The results of studying the influence of strained superlattices introduced into a metamorphic buffer on the electrophysical properties and atomic crystal structure of In{sub 0.70}Al{sub 0.30}As/In{sub 0.76}Ga{sub 0.24}As/In{sub 0.70}Al{sub 0.30}As metamorphic high-electron-mobility transistor (MHEMT) nanoheterostructures on GaAs substrates are presented. Two types of MHEMT structures are grown by molecular beam epitaxy, namely, one with a linear increase in x in the In{sub x}Al{sub 1-x}As metamorphic buffer, and the second with two mismatched superlattices introduced inside the metamorphic buffer. The electrophysical and structural parameters of the grown samples are studied by the van der Pauw method, transmission electron microscopy (including scanningmore » and high-resolution microscopy), atomic-force microscopy, and energy dispersive X-ray analysis. It is revealed that the introduction of superlattices into a metamorphic buffer substantially improves the electrophysical and structural characteristics of MHEMT structures.« less

Cerium dioxide nanoparticles exacerbate house dust mite induced type II airway inflammation.

PubMed

Meldrum, Kirsty; Robertson, Sarah B; Römer, Isabella; Marczylo, Tim; Dean, Lareb S N; Rogers, Andrew; Gant, Timothy W; Smith, Rachel; Tetley, Terry D; Leonard, Martin O

2018-05-23

Nanomaterial inhalation represents a potential hazard for respiratory conditions such as asthma. Cerium dioxide nanoparticles (CeO 2 NPs) have the ability to modify disease outcome but have not been investigated for their effect on models of asthma and inflammatory lung disease. The aim of this study was to examine the impact of CeO 2 NPs in a house dust mite (HDM) induced murine model of asthma. Repeated intranasal instillation of CeO 2 NPs in the presence of HDM caused the induction of a type II inflammatory response, characterised by increased bronchoalveolar lavage eosinophils, mast cells, total plasma IgE and goblet cell metaplasia. This was accompanied by increases in IL-4, CCL11 and MCPT1 gene expression together with increases in the mucin and inflammatory regulators CLCA1 and SLC26A4. CLCA1 and SLC26A4 were also induced by CeO 2 NPs + HDM co-exposure in air liquid interface cultures of human primary bronchial epithelial cells. HDM induced airway hyperresponsiveness and airway remodelling in mice were not altered with CeO 2 NPs co-exposure. Repeated HMD instillations followed by a single exposure to CeO 2 NPs failed to produce changes in type II inflammatory endpoints but did result in alterations in the neutrophil marker CD177. Treatment of mice with CeO 2 NPs in the absence of HDM did not have any significant effects. RNA-SEQ was used to explore early effects 24 h after single treatment exposures. Changes in SAA3 expression paralleled increased neutrophil BAL levels, while no changes in eosinophil or lymphocyte levels were observed. HDM resulted in a strong induction of type I interferon and IRF3 dependent gene expression, which was inhibited with CeO 2 NPs co-exposure. Changes in the expression of genes including CCL20, CXCL10, NLRC5, IRF7 and CLEC10A suggest regulation of dendritic cells, macrophage functionality and IRF3 modulation as key early events in how CeO 2 NPs may guide pulmonary responses to HDM towards type II inflammation. CeO 2 NPs were observed to modulate the murine pulmonary response to house dust mite allergen exposure towards a type II inflammatory environment. As this type of response is present within asthmatic endotypes this finding may have implications for how occupational or incidental exposure to CeO 2 NPs should be considered for those susceptible to disease.

Confined NaAlH4 nanoparticles inside CeO2 hollow nanotubes towards enhanced hydrogen storage.

PubMed

Gao, Qili; Xia, Guanglin; Yu, Xuebin

2017-10-05

NaAlH 4 has been widely regarded as a potential hydrogen storage material due to its favorable thermodynamics and high energy density. The high activation energy barrier and high dehydrogenation temperature, however, significantly hinder its practical application. In this paper, CeO 2 hollow nanotubes (HNTs) prepared by a simple electrospinning technique are adopted as functional scaffolds to support NaAlH 4 nanoparticles (NPs) towards advanced hydrogen storage performance. The nanoconfined NaAlH 4 inside CeO 2 HNTs, synthesized via the infiltration of molten NaAlH 4 into the CeO 2 HNTs under high hydrogen pressure, exhibited significantly improved dehydrogenation properties compared with both bulk and ball-milled CeO 2 HNTs-catalyzed NaAlH 4 . The onset dehydrogenation temperature of the NaAlH 4 @CeO 2 composite was reduced to below 100 °C, with only one main dehydrogenation peak appearing at 130 °C, which is 120 °C and 50 °C lower than for its bulk counterpart and for the ball-milled CeO 2 HNTs-catalyzed NaAlH 4 , respectively. Moreover, ∼5.09 wt% hydrogen could be released within 30 min at 180 °C, while only 1.6 wt% hydrogen was desorbed from the ball-milled NaAlH 4 under the same conditions. This significant improvement is mainly attributed to the synergistic effects contributed by the CeO 2 HNTs, which could act as not only a structural scaffold to fabricate and confine the NaAlH 4 NPs, but also as an effective catalyst to enhance the hydrogen storage performance of NaAlH 4 .

Regulating the active species of Ni(OH)2 using CeO2: 3D CeO2/Ni(OH)2/carbon foam as an efficient electrode for the oxygen evolution reaction.

PubMed

Liu, Zhengqing; Li, Na; Zhao, Hongyang; Zhang, Yi; Huang, Yunhui; Yin, Zongyou; Du, Yaping

2017-04-01

Three dimensional (3D) N, O and S doped carbon foam (NOSCF) is prepared as a substrate for in situ vertically grown Ni(OH) 2 nanosheets. As designed Ni(OH) 2 /NOSCF possesses strong electrostatic interactions with OH - ions due to many C 0000000000000000000000000000000000 0000000000000000000000000000000000 0000000000000000000000000000000000 0000000000000000000000000000000000 0000000000000000000000000000000000 0000000000000000000000000000000000 0000000000000000000000000000000000 0000000000000000000000000000000000 0000000000000000000000000000000000 0000000000000000000000000000000000 0000000000000000000000000000000000 0000000000000000000000000000000000 0000000000000000000000000000000000 0000000000000000000000000000000000 0000000000000000000000000000000000 1111111111111111111111111111111111 1111111111111111111111111111111111 0000000000000000000000000000000000 0000000000000000000000000000000000 0000000000000000000000000000000000 0000000000000000000000000000000000 1111111111111111111111111111111111 1111111111111111111111111111111111 0000000000000000000000000000000000 0000000000000000000000000000000000 0000000000000000000000000000000000 0000000000000000000000000000000000 0000000000000000000000000000000000 0000000000000000000000000000000000 0000000000000000000000000000000000 0000000000000000000000000000000000 0000000000000000000000000000000000 0000000000000000000000000000000000 0000000000000000000000000000000000 O groups existing in NOSCF, which can facilitate the formation of crucial NiOOH intermediates during the OER process. CeO 2 nanoparticles (NPs) of ∼3.3 nm in size are decorated on Ni(OH) 2 nanosheets to design a highly efficient CeO 2 /Ni(OH) 2 /NOSCF electrocatalyst for the oxygen evolution reaction (OER). The CeO 2 NP decorated Ni(OH) 2 /NOSCF not only exhibits a remarkably improved OER performance with an onset potential of 240 mV, outperforming most reported non-noble metal based OER electrocatalysts, but also possesses a small Tafel slope of 57 mV dec -1 and excellent stability under different overpotentials. The synergistic effect of producing more active species of Ni III/IV and accelerating the charge transfer for Ni(OH) 2 /NOSCF by the introduction of CeO 2 NPs is also investigated. These results demonstrate the possibility of designing energy efficient OER catalysts with the assistance of earth abundant CeO 2 -based catalysts.

Growth temperature optimization of GaAs-based In0.83Ga0.17As on InxAl1-xAs buffers

NASA Astrophysics Data System (ADS)

Chen, X. Y.; Gu, Y.; Zhang, Y. G.; Ma, Y. J.; Du, B.; Zhang, J.; Ji, W. Y.; Shi, Y. H.; Zhu, Y.

2018-04-01

Improved quality of gas source molecular beam epitaxy grown In0.83Ga0.17As layer on GaAs substrate was achieved by adopting a two-step InxAl1-xAs metamorphic buffer at different temperatures. With a high-temperature In0.83Al0.17As template following a low-temperature composition continuously graded InxAl1-xAs (x = 0.05-0.86) buffer, better structural, optical and electrical properties of succeeding In0.83Ga0.17As were confirmed by atomic force microscopy, photoluminescence and Hall-effect measurements. Cross-sectional transmission electron microscopy revealed significant effect of the two-step temperature grown InAlAs buffer layers on the inhibition of threading dislocations due to the deposition of high density nuclei on GaAs substrate at the low growth temperature. The limited reduction for the dark current of GaAs-based In0.83Ga0.17As photodetectors on the two-step temperature grown InxAl1-xAs buffer layers was ascribed to the contribution of impurities caused by the low growth temperature of InAlAs buffers.

The translocation and distribution of CeO2 nanoparticles in plants (Soybeans, Chili, Eggplant and Tomato)

NASA Astrophysics Data System (ADS)

Li, Teng; Dai, Yanhui

2018-02-01

Intensive production of CeO2 nanoparticles (NPs) would lead to their release into the environment. While their use in commercial goods is constantly increasing, location of NPs in plant is still poorly documented. In this study we determined the translocation of CeO2-NPs in four plants (Soybeans, Tomato, Chili and Eggplant) grown in natural conditions. The plants were digged out 1/4 roots into 2000 mg/L CeO2-NPs solution during the blossoming period. After being exposed for one month, the contents of Ce in plant tissues were measured by inductively coupled plasma mass spectrometry (ICP-MS). There was more Ce in the leaf of treated plants than in control plants. The contents of Ce in leaf tissues was different. This research offers vital information about the translocation and distribution of CeO2-NPs in higher plants.

Methods for improved growth of group III nitride semiconductor compounds

DOEpatents

Melnik, Yuriy; Chen, Lu; Kojiri, Hidehiro

2015-03-17

Methods are disclosed for growing group III-nitride semiconductor compounds with advanced buffer layer technique. In an embodiment, a method includes providing a suitable substrate in a processing chamber of a hydride vapor phase epitaxy processing system. The method includes forming an AlN buffer layer by flowing an ammonia gas into a growth zone of the processing chamber, flowing an aluminum halide containing precursor to the growth zone and at the same time flowing additional hydrogen halide or halogen gas into the growth zone of the processing chamber. The additional hydrogen halide or halogen gas that is flowed into the growth zone during buffer layer deposition suppresses homogeneous AlN particle formation. The hydrogen halide or halogen gas may continue flowing for a time period while the flow of the aluminum halide containing precursor is turned off.

Low toxicity of HfO2, SiO2, Al2O3 and CeO2 nanoparticles to the yeast, Saccharomyces cerevisiae.

PubMed

García-Saucedo, Citlali; Field, James A; Otero-Gonzalez, Lila; Sierra-Álvarez, Reyes

2011-09-15

Increasing use of nanomaterials necessitates an improved understanding of their potential impact on environment health. This study evaluated the cytotoxicity of nanosized HfO(2), SiO(2), Al(2)O(3) and CeO(2) towards the eukaryotic model organism Saccharomyces cerevisiae, and characterized their state of dispersion in bioassay medium. Nanotoxicity was assessed by monitoring oxygen consumption in batch cultures and by analysis of cell membrane integrity. CeO(2), Al(2)O(3), and HfO(2) nanoparticles were highly unstable in yeast medium and formed micron-sized, settleable agglomerates. A non-toxic polyacrylate dispersant (Dispex A40) was used to improve nanoparticle stability and determine the impact of enhanced dispersion on toxicity. None of the NPs tested without dispersant inhibited O(2) uptake by yeast at concentrations as high as 1000 mg/L. Dispersant supplementation only enhanced the toxicity of CeO(2) (47% at 1000 mg/L). Dispersed SiO(2) and Al(2)O(3) (1000 mg/L) caused cell membrane damage, whereas dispersed HfO(2) and CeO(2) did not cause significant disruption of membrane integrity at the same concentration. These results suggest that the O(2) uptake inhibition observed with dispersed CeO(2) NPs was not due to reduced cell viability. This is the first study evaluating toxicity of nanoscale HfO(2), SiO(2), Al(2)O(3) and CeO(2) to S. cerevisiae. Overall the results obtained demonstrate that these nanomaterials display low or no toxicity to yeast. Copyright © 2011 Elsevier B.V. All rights reserved.

Effect of CeO2 on Microstructure and Wear Resistance of TiC Bioinert Coatings on Ti6Al4V Alloy by Laser Cladding

PubMed Central

Wang, Haojun

2017-01-01

To solve the lack of wear resistance of titanium alloys for use in biological applications, various prepared coatings on titanium alloys are often used as wear-resistant materials. In this paper, TiC bioinert coatings were fabricated on Ti6Al4V by laser cladding using mixed TiC and ZrO2 powders as the basic pre-placed materials. A certain amount of CeO2 powder was also added to the pre-placed powders to further improve the properties of the TiC coatings. The effects of CeO2 additive on the phase constituents, microstructures and wear resistance of the TiC coatings were researched in detail. Although the effect of CeO2 on the phase constituents of the coatings was slight, it had a significant effect on the microstructure and wear resistance of the coatings. The crystalline grains in the TiC coatings, observed by a scanning electron microscope (SEM), were refined due to the effect of the CeO2. With the increase of CeO2 additive content in the pre-placed powders, finer and more compact dendrites led to improvement of the micro-hardness and wear resistance of the TiC coatings. Also, 5 wt % content of CeO2 additive in the pre-placed powders was the best choice for improving the wear properties of the TiC coatings. PMID:29301218

Plasma-catalyst hybrid reactor with CeO2/γ-Al2O3 for benzene decomposition with synergetic effect and nano particle by-product reduction.

PubMed

Mao, Lingai; Chen, Zhizong; Wu, Xinyue; Tang, Xiujuan; Yao, Shuiliang; Zhang, Xuming; Jiang, Boqiong; Han, Jingyi; Wu, Zuliang; Lu, Hao; Nozaki, Tomohiro

2018-04-05

A dielectric barrier discharge (DBD) catalyst hybrid reactor with CeO 2 /γ-Al 2 O 3 catalyst balls was investigated for benzene decomposition at atmospheric pressure and 30 °C. At an energy density of 37-40 J/L, benzene decomposition was as high as 92.5% when using the hybrid reactor with 5.0wt%CeO 2 /γ-Al 2 O 3 ; while it was 10%-20% when using a normal DBD reactor without a catalyst. Benzene decomposition using the hybrid reactor was almost the same as that using an O 3 catalyst reactor with the same CeO 2 /γ-Al 2 O 3 catalyst, indicating that O 3 plays a key role in the benzene decomposition. Fourier transform infrared spectroscopy analysis showed that O 3 adsorption on CeO 2 /γ-Al 2 O 3 promotes the production of adsorbed O 2 - and O 2 2‒ , which contribute benzene decomposition over heterogeneous catalysts. Nano particles as by-products (phenol and 1,4-benzoquinone) from benzene decomposition can be significantly reduced using the CeO 2 /γ-Al 2 O 3 catalyst. H 2 O inhibits benzene decomposition; however, it improves CO 2 selectivity. The deactivated CeO 2 /γ-Al 2 O 3 catalyst can be regenerated by performing discharges at 100 °C and 192-204 J/L. The decomposition mechanism of benzene over CeO 2 /γ-Al 2 O 3 catalyst was proposed. Copyright © 2017 Elsevier B.V. All rights reserved.

UV-Resistant and Thermally Stable Superhydrophobic CeO2 Nanotubes with High Water Adhesion.

PubMed

Li, Xue-Ping; Sun, Ya-Li; Xu, Yao-Yi; Chao, Zi-Sheng

2018-06-03

A novel type of sticky superhydrophobic cerium dioxide (CeO 2 ) nanotube material is prepared by hydrothermal treatment without any chemical modification. A water droplet on the material surface shows a static water contact angle of about 157° but the water droplet is pinned on the material surface even when the material surface is turned upside down. Interestingly, the as-prepared CeO 2 nanotube material displays durable superhydrophobicity and enhanced adhesion to water under ultraviolet (UV) light irradiation. Importantly, this change in water adhesion can be reversed by heat treatment to restore the original adhesive value of 20 µL. Further, the maximum volume of the water droplet adhered on the material surface of CeO 2 nanotubes can be regulated without loss of superhydrophobicity during the heating treatment/UV-irradiation cycling. Meanwhile, the superhydrophobic CeO 2 nanotube material shows remarkable thermal stability even at temperatures as high as 450 °C, long-term durability in chemical environment, and air-storage and good resistance to oily contaminant. Finally, the potential application in no-loss water transportation of this sticky superhydrophobic CeO 2 material is demonstrated. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Structure and Properties of VO2 and Titanium Dioxide Based Epitaxial Heterostructures Integrated with Silicon and Sapphire Substrates

NASA Astrophysics Data System (ADS)

Bayati, Mohammad Reza

The main focus of this study was placed on structure-property correlation in TiO2 and VO2 based epitaxial heterostructures where the photochemical and electrical properties were tuned through microstructural engineering. In the framework of domain matching epitaxy, epitaxial growth of TiO2 and VO2 heterostructures on different substrates were explained. The theta-2theta and ϕ scan X-ray diffraction measurements and detailed high resolution electron microscopy studies corroborated our understanding of the epitaxial growth and the crystallographic arrangement across the interfaces. The influence of the laser and substrate variables on structural characteristics of the films was investigated using X-ray photoelectron spectroscopy, room temperature photoluminescence spectroscopy, and UV-Vis spectrophotometry. In addition, morphological studies were performed by atomic force microscopy. Photochemical properties of the heterostructures were assessed through measuring surface wettability characteristics and photocatalytic reaction rate constant of degradation of 4-chlorophenol under ultraviolet and visible irradiations. We also studied electrical properties employing 4-probe measurement technique. The effect of post treatment processes, such as vacuum annealing and laser treatment, on structure and properties was investigated as well. The role of point defects and deviation from the stoichiometry on photochemical and electrical properties was addressed. In this research, TiO2 epilayers with controlled phase structure, defect content, and crystallographic alignments were grown on sapphire and silicon substrates. Integration with silicon was achieved using cubic and tetragonal yttria-stabilized zirconia buffer layers. I was able to tune the phase structure of the TiO2 based heterostructures from pure rutile to pure anatase and establish an epitaxial relationship across the interfaces in each case. These heterostructures were used for two different purposes. First, their application in environmental remediation was taken into account. The photochemical efficiency of the samples was evaluated under ultraviolet and visible illuminations. I was able to establish a correlation between the growth conditions and the photocatalytic activity of single crystalline TiO 2 thin films. Visible-light-responsive TiO2 films were fabricated via vacuum annealing of the samples where point defects, namely oxygen vacancies and titanium interstitial, are surmised to play a critical role. An ultrafast switching was observed in wetting characteristics of the single crystalline rutile TiO2 films from a hydrophobic state to a superhydrophilic state by single pulsed excimer laser annealing. It was observed that the laser annealing almost doubles the photocatalytic efficiency of the anatase epitaxial thin films. I was able to measure the photochemical properties of the rutile and the anatase TiO2 heterostructures in a controlled way due to the single crystalline nature of the films. Second, the rutile TiO2 epilayers with different out-of-plane orientations were deposited and used as a platform for VO2 based epitaxial heterostructures with the aim of manipulating of microstructure and electrical properties of the VO 2 films. Vanadium dioxide (VO2) is an interesting material due to the abrupt change in electrical resistivity and infrared transmittance at about 68 °C. The transition temperature can be tuned through microstructural engineering. It was the idea behind using rutile TiO2 with different crystallographic orientations as a template to tune the semiconductor to metal transition characteristics of the VO2 top layer. I successfully grew VO2(001), VO2(100), and VO2(2¯01) epitaxial thin films on TiO2(100)/c-sapphire, TiO2(101)/r-sapphire, and TiO2(001)/ m-sapphire platforms, respectively. It was observed that tetragonal phase of VO2 was stabilized at lower temperatures leading to a significant decrease in the semiconductor to metal transition temperature. In other words, we were able to tune the transition temperature of the VO 2 epitaxial heterostructures. This achievement introduces the VO 2 based single crystalline heterostructures as a promising candidate for a wide range of applications where different transition temperatures are required. The epitaxial relationships were established and atomic arrangement across the interfaces was studied in detail.

Pulmonary toxicity of well-dispersed cerium oxide nanoparticles following intratracheal instillation and inhalation

NASA Astrophysics Data System (ADS)

Morimoto, Yasuo; Izumi, Hiroto; Yoshiura, Yukiko; Tomonaga, Taisuke; Oyabu, Takako; Myojo, Toshihiko; Kawai, Kazuaki; Yatera, Kazuhiro; Shimada, Manabu; Kubo, Masaru; Yamamoto, Kazuhiro; Kitajima, Shinichi; Kuroda, Etsushi; Kawaguchi, Kenji; Sasaki, Takeshi

2015-11-01

We performed inhalation and intratracheal instillation studies of cerium dioxide (CeO2) nanoparticles in order to investigate their pulmonary toxicity, and observed pulmonary inflammation not only in the acute and but also in the chronic phases. In the intratracheal instillation study, F344 rats were exposed to 0.2 mg or 1 mg of CeO2 nanoparticles. Cell analysis and chemokines in bronchoalveolar lavage fluid (BALF) were analyzed from 3 days to 6 months following the instillation. In the inhalation study, rats were exposed to the maximum concentration of inhaled CeO2 nanoparticles (2, 10 mg/m3, respectively) for 4 weeks (6 h/day, 5 days/week). The same endpoints as in the intratracheal instillation study were examined from 3 days to 3 months after the end of the exposure. The intratracheal instillation of CeO2 nanoparticles caused a persistent increase in the total and neutrophil number in BALF and in the concentration of cytokine-induced neutrophil chemoattractant (CINC)-1, CINC-2, chemokine for neutrophil, and heme oxygenase-1 (HO-1), an oxidative stress marker, in BALF during the observation time. The inhalation of CeO2 nanoparticles also induced a persistent influx of neutrophils and expression of CINC-1, CINC-2, and HO-1 in BALF. Pathological features revealed that inflammatory cells, including macrophages and neutrophils, invaded the alveolar space in both studies. Taken together, the CeO2 nanoparticles induced not only acute but also chronic inflammation in the lung, suggesting that CeO2 nanoparticles have a pulmonary toxicity that can lead to irreversible lesions.

Intrinsic pinning and the critical current scaling of clean epitaxial Fe(Se,Te) thin films

NASA Astrophysics Data System (ADS)

Iida, Kazumasa; Hänisch, Jens; Reich, Elke; Kurth, Fritz; Hühne, Ruben; Schultz, Ludwig; Holzapfel, Bernhard; Ichinose, Ataru; Hanawa, Masafumi; Tsukada, Ichiro; Schulze, Michael; Aswartham, Saicharan; Wurmehl, Sabine; Büchner, Bernd

2013-03-01

We report on the transport properties of clean, epitaxial Fe(Se,Te) thin films prepared on Fe-buffered MgO (001) single crystalline substrates by pulsed laser deposition. Near Tc a steep slope of the upper critical field for H||ab was observed (74.1 T/K), leading to a very short out-of-plane coherence length, ξc(0), of 0.2 nm, yielding 2ξc(0)≈0.4nm. This value is shorter than the interlayer distance (0.605 nm) between the Fe-Se(Te) planes, indicative of modulation of the superconducting order parameter along the c axis. An inverse correlation between the power law exponent N of the electric field-current density(E-J) curve and the critical current density Jc has been observed at 4 K, when the orientation of H was close to the ab plane. These results prove the presence of intrinsic pinning in Fe(Se,Te). A successful scaling of the angular dependent Jc and the corresponding exponent N can be realized by the anisotropic Ginzburg Landau approach with appropriate Γ values 2˜3.5. The temperature dependence of Γ behaves almost identically to that of the penetration depth anisotropy.

Predicting Firm Success From the Facial Appearance of Chief Executive Officers of Non-Profit Organizations.

PubMed

Re, Daniel E; Rule, Nicholas O

2016-10-01

Recent research has demonstrated that judgments of Chief Executive Officers' (CEOs') faces predict their firms' financial performance, finding that characteristics associated with higher power (e.g., dominance) predict greater profits. Most of these studies have focused on CEOs of profit-based businesses, where the main criterion for success is financial gain. Here, we examined whether facial appearance might predict measures of success in a sample of CEOs of non-profit organizations (NPOs). Indeed, contrary to findings for the CEOs of profit-based businesses, judgments of leadership and power from the faces of CEOs of NPOs negatively correlated with multiple measures of charitable success (Study 1). Moreover, CEOs of NPOs looked less powerful than the CEOs of profit-based businesses (Study 2) and leadership ratings positively associated with warmth-based traits and NPO success when participants knew the faces belonged to CEOs of NPOs (Study 3). CEOs who look less dominant may therefore achieve greater success in leading NPOs, opposite the relationship found for the CEOs of profit-based companies. Thus, the relationship between facial appearance and leadership success varies by organizational context. © The Author(s) 2016.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim H. Y.; Henkelman, G.

To reveal the richer chemistry of CO oxidation by CeO2 supported Au Nanoclusters NCs)/Nanoparticles, we design a Au12 supported on a stepped-CeO2 model (Au/CeO2-step) and study various kinds of CO oxidation mechanisms at the interface of the Au/CeO2-step: oxygen spillover from the CeO2 to the Au NCs;2 CO oxidation by the O2 bound to the Au-Ce3+ interface;3 and CO oxidation by the Mars-van Krevelen (M-vK) mechanism.4 DFT+U calculations show that lattice oxygen at the CeO2 step edge oxidizes CO bound to Au NCs by the M-vK mechanism. CO2 desorption determines the rate of CO oxidation and the vacancy formation energymore » (Evac) is a reactivity descriptor for CO oxidation. The maximum Evac that insures spontaneous CO2 production is higher for the Au/CeO2-step than the Au/CeO2-surface suggesting that the CeO2-step is a better supporting material than the CeO2-surface for CO oxidation by the Au/CeO2. Our results also suggest that for CO oxidation by Au NCs supported on nano- or meso-structured CeO2, which is the case of industrial catalysts, the M-vK mechanism accounts for a large portion of the total activity.« less

Ce3+-ion, Surface Oxygen Vacancy, and Visible Light-induced Photocatalytic Dye Degradation and Photocapacitive Performance of CeO2-Graphene Nanostructures.

PubMed

Khan, Mohammad Ehtisham; Khan, Mohammad Mansoob; Cho, Moo Hwan

2017-07-19

Cerium oxide nanoparticles (CeO 2 NPs) were fabricated and grown on graphene sheets using a facile, low cost hydrothermal approach and subsequently characterized using different standard characterization techniques. X-ray photoelectron spectroscopy and electron paramagnetic resonance revealed the changes in surface states, composition, changes in Ce 4+ to Ce 3+ ratio, and other defects. Transmission electron microscopy (TEM) and high resolution TEM revealed that the fabricated CeO 2 NPs to be spherical with particle size of ~10-12 nm. Combination of defects in CeO 2 NPs with optimal amount of two-dimensional graphene sheets had a significant effect on the properties of the resulting hybrid CeO 2 -Graphene nanostructures, such as improved optical, photocatalytic, and photocapacitive performance. The excellent photocatalytic degradation performances were examined by monitoring their ability to degrade Congo red ~94.5% and methylene blue dye ~98% under visible light irradiation. The photoelectrode performance had a maximum photocapacitance of 177.54 Fg -1 and exhibited regular capacitive behavior. Therefore, the Ce 3+ -ion, surface-oxygen-vacancies, and defects-induced behavior can be attributed to the suppression of the recombination of photo-generated electron-hole pairs due to the rapid charge transfer between the CeO 2 NPs and graphene sheets. These findings will have a profound effect on the use of CeO 2 -Graphene nanostructures for future energy and environment-related applications.

Enhanced infrared emissivity of CeO2 coatings by La doping

NASA Astrophysics Data System (ADS)

Huang, Jianping; Fan, Chenglei; Song, Guangping; Li, Yibin; He, Xiaodong; Zhang, Xinjiang; Sun, Yue; Du, Shanyi; Zhao, Yijie

2013-09-01

Pure CeO2 and La doped CeO2 (LDC) coatings were prepared on nickel-based substrates by electron beam physical vapor deposition at 1173 K. The infrared emissivity in 2.5-25 μm of LDC coatings was enhanced with the increase of La concentration at high temperature 873-1273 K. Compared to the undoped CeO2 coating, the infrared emissivity of 16.7% LDC coating increases by 55%, and reaches up to 0.9 at 873 K. The enhancement of doped coatings’ emissivity is attributed to the increasing lattice absorption and free-carrier absorption. The high emissivity LDC coatings show a promising potential in high temperature application.

Ni-CeO2 spherical nanostructures for magnetic and electrochemical supercapacitor applications.

PubMed

Murugan, Ramachandran; Ravi, Ganesan; Vijayaprasath, Gandhi; Rajendran, Somasundharam; Thaiyan, Mahalingam; Nallappan, Maheswari; Gopalan, Muralidharan; Hayakawa, Yasuhiro

2017-02-08

The synthesis of nanoparticles has great control over the structural and functional characteristics of materials. In this study, CeO 2 and Ni-CeO 2 spherical nanoparticles were prepared using a microwave-assisted method. The prepared nanoparticles were characterized via thermogravimetry, X-ray diffraction (XRD), Raman, FTIR, scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), vibrating sample magnetometry (VSM) and cyclic voltammetry (CV). The pure CeO 2 sample exhibited a flake-like morphology, whereas Ni-doped CeO 2 showed spherical morphology with uniform shapes. Spherical morphologies for the Ni-doped samples were further confirmed via TEM micrographs. Thermogravimetric analyses revealed that decomposition varies with Ni-doping in CeO 2 . XRD revealed that the peak shifts towards lower angles for the Ni-doped samples. Furthermore, a diamagnetic to ferromagnetic transition was observed in Ni-doped CeO 2 . The ferromagnetic property was attributed to the introduction of oxygen vacancies in the CeO 2 lattice upon doping with Ni, which were confirmed by Raman and XPS. The pseudo-capacitive properties of pure and Ni-doped CeO 2 samples were evaluated via cyclic voltammetry and galvanostatic charge-discharge studies, wherein 1 M KOH was used as the electrolyte. The specific capacitances were 235, 351, 382, 577 and 417 F g -1 corresponding to the pure 1%, 3%, 5% and 7% of Ni doped samples at the current density of 2 A g -1 , respectively. The 5% Ni-doped sample showed an excellent cyclic stability and maintained 94% of its maximum specific capacitance after 1000 cycles.

Ultrafine Nanocrystalline CeO2@C-Containing NaAlH4 with Fast Kinetics and Good Reversibility for Hydrogen Storage.

PubMed

Zhang, Xin; Liu, Yongfeng; Wang, Ke; Li, You; Gao, Mingxia; Pan, Hongge

2015-12-21

A nanocrystalline CeO2@C-containing NaAlH4 composite is successfully synthesized in situ by hydrogenating a NaH-Al mixture doped with CeO2@C. Compared with NaAlH4 , the as-prepared CeO2@C-containing NaAlH4 composite, with a minor amount of excess Al, exhibits significantly improved hydrogen storage properties. The dehydrogenation onset temperature of the hydrogenated [NaH-Al-7 wt % CeO2@C]-0.04Al sample is 77 °C lower than that of the pristine sample because of a reduced kinetic barrier. More importantly, the dehydrogenated sample absorbs ∼4.7 wt % hydrogen within 35 min at 100°C and 10 MPa of hydrogen. Compositional and structural analyses reveal that CeO2 is converted to CeH2 during ball milling and that the newly formed CeH2 works with the excess of Al to synergistically improve the hydrogen storage properties of NaAlH4. Our findings will aid in the rational design of novel catalyst-doped complex hydride systems with low operating temperatures, fast kinetics, and long-term cyclability. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Hydrodeoxygenation of p -Cresol over Pt/Al 2 O 3 Catalyst Promoted by ZrO 2 , CeO 2 , and CeO 2 –ZrO 2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Weiyan; Wu, Kui; Liu, Pengli

2016-07-20

ZrO 2-Al 2O 3 and CeO 2-Al 2O 3 were prepared by a co-precipitation method and selected as supports for Pt catalysts. The effects of CeO 2 and ZrO 2 on the surface area and Brønsted acidity of Pt/Al 2O 3 were studied. In the hydrodeoxygenation (HDO) of p-cresol, the addition of ZrO 2 promoted the direct deoxygenation activity on Pt/ZrOO 2-Al 2O 3 via Caromatic-O bond scission without benzene ring saturation. Pt/CeOO 2-Al 2O 3 exhibited higher deoxygenation extent than Pt/Al 2O 3 due to the fact that Brønsted acid sites on the catalyst surface favored the adsorption ofmore » p-cresol. With the advantages of CeO 2 and ZrO 2 taken into consideration, CeO 2-ZrOO 2-Al 2O 3 was prepared, leading to the highest HDO activity of Pt/CeO 2-ZrOO 2-Al 2O 3. The deoxygenation extent for Pt/CeO 2-ZrOO 2-Al 2O 3 was 48.4% and 14.5% higher than that for Pt/ZrO2O 2-Al 2O 3 and Pt/CeOO 2-Al 2O 3, respectively.« less

Inclined dislocation arrays in AlGaN/AlGaN quantum well structures emitting at 290 nm

NASA Astrophysics Data System (ADS)

Chang, T. Y.; Moram, M. A.; McAleese, C.; Kappers, M. J.; Humphreys, C. J.

2010-12-01

We report on the structural and optical properties of deep ultraviolet emitting AlGaN/AlGaN multiple quantum wells (MQWs) grown on (0001) sapphire by metal-organic vapor phase epitaxy using two different buffer layer structures, one containing a thin (1 μm) AlN layer combined with a GaN interlayer and the other a thick (4 μm) AlN layer. Transmission electron microscopy analysis of both structures showed inclined arrays of dislocations running through the AlGaN layers at an angle of ˜30°, originating at bunched steps at the AlN surface and terminating at bunched steps at the surface of the MQW structure. In all layers, these inclined dislocation arrays are surrounded by AlGaN with a relatively higher Ga content, consistent with plan-view cathodoluminescence maps in which the bunched surface steps are associated with longer emission wavelengths. The structure with the 4 μm-thick AlN buffer layer had a dislocation density lower by a factor of 2 (at (1.7±0.1)×109 cm-2) compared to the structure with the 1 μm thick AlN buffer layer, despite the presence of the inclined dislocation arrays.

The roles of buffer layer thickness on the properties of the ZnO epitaxial films

NASA Astrophysics Data System (ADS)

Tang, Kun; Huang, Shimin; Gu, Shulin; Zhu, Shunming; Ye, Jiandong; Xu, Zhonghua; Zheng, Youdou

2016-12-01

In this article, the authors have investigated the optimization of the buffer thickness for obtaining high-quality ZnO epi-films on sapphire substrates. The growth mechanism of the buffers with different thickness has been clearly revealed, including the initial nucleation and vertical growth, the subsequent lateral growth with small grain coalescence, and the final vertical growth along the existing larger grains. Overall, the quality of the buffer improves with increasing thickness except the deformed surface morphology. However, by a full-scale evaluation of the properties for the epi-layers, the quality of the epi-film is briefly determined by the surface morphology of the buffer, rather than the structural, optical, or electrical properties of it. The best quality epi-layer has been grown on the buffer with a smooth surface and well-coalescent grains. Meanwhile, due to the huge lattice mismatch between sapphire and ZnO, dislocations are inevitably formed during the growth of buffers. More importantly, as the film grows thicker, the dislocations may attracting other smaller dislocations and defects to reduce the total line energy and thus result in the formation of V-shape defects, which are connected with the bottom of the threading dislocations in the buffers. The V-defects appear as deep and large hexagonal pits from top view and they may act as electron traps which would affect the free carrier concentration of the epi-layers.

One-pot synthesis of La0.7Sr0.3MnO3 supported on flower-like CeO2 as electrocatalyst for oxygen reduction reaction in aluminum-air batteries

NASA Astrophysics Data System (ADS)

Xue, Yejian; Huang, Heran; Miao, He; Sun, Shanshan; Wang, Qin; Li, Shihua; Liu, Zhaoping

2017-08-01

A novel La0.7Sr0.3MnO3-CeO2 (LSM-CeO2) hybrid catalyst for oxygen reduction reaction (ORR) has been synthesized by a facile one-pot method. The flower-like CeO2 with the diameter of about 3 μm is formed by the agglomeration of nanosheets with the thickness of about 40 nm. The LSM particles with the diameter of about 150 nm are well distributed on the flower-like CeO2, thus the interaction between LSM and CeO2 is built. Therefore, the LSM-CeO2 composite catalyst exhibits the much higher catalytic activity toward ORR with the direct four-electron transfer mechanism in alkaline solution than LSM or CeO2. Furthermore, the stability of LSM-CeO2 is superior to that of Pt/C, and the current retention is 93% after 100000 s. The maximum power density of the aluminum-air battery using LSM-CeO2 as the ORRC can reach 238 mW cm-2, which is about 29% higher than that with LSM (184 mW cm-2). It indicates that LSM-CeO2 composite material is a promising cathodic electrocatalyst for metal-air batteries.

Impact of cerium oxide nanoparticles on cilantro ( Coriandrum sativum)

NASA Astrophysics Data System (ADS)

Morales, Maria Isabel

Studies have shown that plants exposed to ENPs suffer different types of stress. Other studies have revealed that plants can take up and accumulate CeO2 NPs without modification. Thus, these NPs could enter the food chain through edible plants, posing a threat for human health. Cilantro (Coriandrum sativum) is a worldwide culinary and medicinal plant consumed either as a fresh herb or a spice. In this research, cilantro plants were germinated and cultivated for 30 days in organic soil treated with CeO2 NPs at concentrations varying from 0 to 500 mg kg -1. Subsequently, plant organs were analyzed by using spectroscopic techniques and biochemical assays. Results indicate that at 125 mg kg -1, the CeO2 NPs significantly increased the root size compared with the other treatments. The ICP-OES results showed that plants exposed to 500 mg kg-1 had significantly (p ≤ 0.05) more Ce in shoots and roots compared to the other treatments. Results from the biochemical assays showed that at 125 mg kg-1, catalese activity significantly increased in shoots and ascorbate peroxidase in roots (p ≤ 0.05). In addition, the FTIR analyses revealed that at 125 mg kg-1, the CeO2 NPs changed the chemical environment of the carbohydrates within the cilantro shoots, for which changes in the area of the stretching frequencies were observed. Moreover, analyses of antioxidant compounds showed a significant ( p ≤ 0.05) reduction on total phenolic content in shoots of cilantro plants treated with 500 mg CeO2 NPs kg-1 . This suggests that the CeO2 NPs have the potential to diminish the ability of cilantro plants to scavenge reactive oxygen species. The multi-elemental analysis showed that plants treated with CeO2 at the 500 mg kg-1 treatment had a significant ( p ≤ 0.05) reduction in shoots' sulfur, silicon, and zinc accumulation. The results of this research indicate that the CeO2 NPs at 500 mg CeO2 kg-1 concentration cause a reduction in the antioxidant ability and nutritional properties of cilantro plants.

Anti-inflammatory activity of clove (Eugenia caryophyllata) essential oil in human dermal fibroblasts.

PubMed

Han, Xuesheng; Parker, Tory L

2017-12-01

Clove (Eugenia caryophyllata Thunb. [Myrtaceae]) essential oil (CEO) has been shown to possess antimicrobial, antifungal, antiviral, antioxidant, anti-inflammatory and anticancer properties. However, few studies have focused on its topical use. We investigated the biological activity of a commercially available CEO in a human skin disease model. We evaluated the effect of CEO on 17 protein biomarkers that play critical roles in inflammation and tissue remodelling in a validated human dermal fibroblast system, which was designed to model chronic inflammation and fibrosis. Four concentrations of CEO (0.011, 0.0037, 0.0012, and 0.00041%, v/v) were studied. The effect of 0.011% CEO on genome-wide gene expression was also evaluated. CEO at a concentration of 0.011% showed robust antiproliferative effects on human dermal fibroblasts. It significantly inhibited the increased production of several proinflammatory biomarkers such as vascular cell adhesion molecule-1 (VCAM-1), interferon γ-induced protein 10 (IP-10), interferon-inducible T-cell α chemoattractant (I-TAC), and monokine induced by γ interferon (MIG). CEO also significantly inhibited tissue remodelling protein molecules, namely, collagen-I, collagen-III, macrophage colony-stimulating factor (M-CSF), and tissue inhibitor of metalloproteinase 2 (TIMP-2). Furthermore, it significantly modulated global gene expression and altered signalling pathways critical for inflammation, tissue remodelling, and cancer signalling processes. CEO significantly inhibited VCAM-1 and collagen III at both protein and gene expression levels. This study provides important evidence of CEO-induced anti-inflammatory and tissue remodelling activity in human dermal fibroblasts. This study also supports the anticancer properties of CEO and its major active component eugenol.

Size determination and quantification of engineered cerium oxide nanoparticles by flow field-flow fractionation coupled to inductively coupled plasma mass spectrometry.

PubMed

Sánchez-García, L; Bolea, E; Laborda, F; Cubel, C; Ferrer, P; Gianolio, D; da Silva, I; Castillo, J R

2016-03-18

Facing the lack of studies on characterization and quantification of cerium oxide nanoparticles (CeO2 NPs), whose consumption and release is greatly increasing, this work proposes a method for their sizing and quantification by Flow Field-flow Fractionation (FFFF) coupled to Inductively Coupled Plasma-Mass Spectrometry (ICP-MS). Two modalities of FFFF (Asymmetric Flow- and Hollow Fiber-Flow Field Flow Fractionation, AF4 and HF5, respectively) are compared, and their advantages and limitations discussed. Experimental conditions (carrier composition, pH, ionic strength, crossflow and carrier flow rates) are studied in detail in terms of NP separation, recovery, and repeatability. Size characterization of CeO2 NPs was addressed by different approaches. In the absence of feasible size standards of CeO2 NPs, suspensions of Ag, Au, and SiO2 NPs of known size were investigated. Ag and Au NPs failed to show a comparable behavior to that of the CeO2 NPs, whereas the use of SiO2 NPs provided size estimations in agreement to those predicted by the theory. The latter approach was thus used for characterizing the size of CeO2 NPs in a commercial suspension. Results were in adequate concordance with those achieved by transmission electron microscopy, X-ray diffraction and dynamic light scattering. The quantification of CeO2 NPs in the commercial suspension by AF4-ICP-MS required the use of a CeO2 NPs standards, since the use of ionic cerium resulted in low recoveries (99 ± 9% vs. 73 ± 7%, respectively). A limit of detection of 0.9 μg L(-1) CeO2 corresponding to a number concentration of 1.8 × 1012 L(-1) for NPs of 5 nm was achieved for an injection volume of 100 μL. Copyright © 2016 Elsevier B.V. All rights reserved.

Investigation of trimethylacetic acid adsorption on stoichiometric and oxygen-deficient CeO 2 (111) surfaces

DOE PAGES

Sanghavi, Shail; Wang, Weina; Nandasiri, Manjula I.; ...

2016-05-12

We studied the interactions between the carboxylate anchoring group from trimethylacetic acid (TMAA) and CeO 2(111) surfaces as a function of oxygen stoichiometry using in situ X-ray photoelectron spectroscopy (XPS). The stoichiometric CeO 2(111) surface was obtained by annealing the thin film under 2.0 × 10 –5 Torr of oxygen at ~550 °C for 30 min. In order to reduce the CeO 2(111) surface, the thin film was annealed under ~5.0 × 10 –10 Torr vacuum conditions at 550 °C, 650 °C, 750 °C and 850 °C for 30 min to progressively increase the oxygen defect concentration on the surface.more » The saturated TMAA coverage on the CeO 2(111) surface determined from XPS elemental composition is found to increase with increasing oxygen defect concentration. This is attributed to the increase of under-coordinated cerium sites on the surface with the increase in the oxygen defect concentrations. Furthermore, XPS results were in agreement with periodic density functional theory (DFT) calculations and indicate a stronger binding between the carboxylate group from TMAA and the oxygen deficient CeO 2–δ(111) surface through dissociative adsorption.« less

Ultrastructural Interactions and Genotoxicity Assay of Cerium Dioxide Nanoparticles on Mouse Oocytes

PubMed Central

Courbiere, Blandine; Auffan, Mélanie; Rollais, Raphaël; Tassistro, Virginie; Bonnefoy, Aurélie; Botta, Alain; Rose, Jérôme; Orsière, Thierry; Perrin, Jeanne

2013-01-01

Cerium dioxide nanoparticles (CeO2 ENPs) are on the priority list of nanomaterials requiring evaluation. We performed in vitro assays on mature mouse oocytes incubated with CeO2 ENPs to study (1) physicochemical biotransformation of ENPs in culture medium; (2) ultrastructural interactions with follicular cells and oocytes using Transmission Electron Microscopy (TEM); (3) genotoxicity of CeO2 ENPs on follicular cells and oocytes using a comet assay. DNA damage was quantified as Olive Tail Moment. We show that ENPs aggregated, but their crystal structure remained stable in culture medium. TEM showed endocytosis of CeO2 ENP aggregates in follicular cells. In oocytes, CeO2 ENP aggregates were only observed around the zona pellucida (ZP). The comet assay revealed significant DNA damage in follicular cells. In oocytes, the comet assay showed a dose-related increase in DNA damage and a significant increase only at the highest concentrations. DNA damage decreased significantly both in follicular cells and in oocytes when an anti-oxidant agent was added in the culture medium. We hypothesise that at low concentrations of CeO2 ENPs oocytes could be protected against indirect oxidative stress due to a double defence system composed of follicular cells and ZP. PMID:24185910

Challenges and Opportunities in Early Childhood: Views of the CEOs of the Big Three--Twenty-First Annual Status Report on For Profit Child Care

ERIC Educational Resources Information Center

Neugebauer, Roger

2008-01-01

This article presents the viewpoints of the CEOs of the three largest for profit child care organizations in North America about trends in their field. The three individuals are: (1) David Lissy, CEO, Bright Horizons Family Solutions; (2) Felicia Thornton, CEO, Knowledge Universe Education, U.S. (parent company for Knowledge Learning Corporation);…

The Interaction of Carbon Monoxide with Rhodium on Potassium-Modified CeO 2(111)

DOE PAGES

Mullins, David R.

2016-02-03

The adsorption and reactions of CO adsorbed on Rh particles deposited on K-covered CeO 2(111) were studied by temperature programmed desorption and photoelectron spectroscopy. K deposited on CeO 2(111) forms a KO X over-layer by extracting O from the ceria and partially reducing some of the Ce 4+ to Ce 3+. CO does not adsorb on the KO X / CeO 2-X(111) surface in the absence of Rh particles. CO adsorbed on Rh / K / CeO 2(111) adsorbs molecularly on the Rh at 200 K. As the surface is heated the CO spills-over and reacts with the KOX tomore » form carbonate. The carbonate decomposes at elevated temperature to produce CO and CO 2. The carbonate stabilizes the KO X so that K desorbs at a higher temperature than it would in the absence of CO. When the Rh and K deposition are reversed so that K is deposited on both the Rh and the CeO 2(111), CO adsorbs as CO 2- at 200 K. The CO 2- decomposes below 350 K to produce gas phase CO and adsorbed CO3 2- and CO. The CO is stabilized by the K on the Rh and desorbs above 540 K. The carbonate decomposes into gas phase CO and CO 2.« less

Evaluation of the role of oxidative stress, inflammation and apoptosis in the pulmonary and the hepatic toxicity induced by cerium oxide nanoparticles following intratracheal instillation in male Sprague-Dawley rats

NASA Astrophysics Data System (ADS)

Nalabotu, Siva Krishna

The field of nanotechnology is rapidly progressing with potential applications in the automobile, healthcare, electronics, cosmetics, textiles, information technology, and environmental sectors. Nanomaterials are engineered structures with at least one dimension of 100 nanometers or less. With increased applications of nanotechnology, there are increased chances of exposure to manufactured nanomaterials. Recent reports on the toxicity of engineered nanomaterials have given scientific and regulatory agencies concerns over the safety of nanomaterials. Specifically, the Organization for Economic Co-operation and Development (OECD) has identified fourteen high priority nanomaterials for study. Cerium oxide (CeO2) nanoparticles are one among the high priority group. Recent data suggest that CeO2 nanoparticles may be toxic to lung cell lines in vitro and lung tissues in vivo. Other work has proposed that oxidative stress may play an important role in the toxicity; however, the exact mechanism of the toxicity, has to our knowledge, not been investigated. Similarly, it is not clear whether CeO2 nanoparticles exhibit systemic toxicity. Here, we investigate whether pulmonary exposure to CeO2 nanoparticles is associated with oxidative stress, inflammation and apoptosis in the lungs and liver of adult male Sprague-Dawley rats. Our data suggest that the intratracheal instillation of CeO2 nanoparticles can cause an increased lung weight to body weight ratio. Changes in lung weights were associated with the accumulation of cerium in the lungs, elevations in serum inflammatory markers, an increased Bax to Bcl-2 ratio, elevated caspase-3 protein levels, increased phosphorylation of p38-MAPK and diminished phosphorylation of ERK1/2-MAPK. Our findings from the study evaluating the possible translocation of CeO2 nanoparticles from the lungs to the liver suggest that CeO 2 nanoparticle exposure was associated with increased liver ceria levels, elevations in serum alanine transaminase levels, reduced albumin levels, a diminished sodium-potassium ratio and decreased serum triglyceride levels. Consistent with these data, rats exposed to CeO2 nanoparticles also exhibited reductions in liver weight and dose dependent hydropic degeneration, hepatocyte enlargement, sinusoidal dilatation and the accumulation of granular material in the hepatocytes. In a follow-up study, we next examined if CeO2 deposition in the liver is characterized by increased oxidative stress and apoptosis. Our data demonstrate that increased cerium in the liver is associated with increased oxidative stress and apoptosis as assessed from hydroethidium staining, the analysis of lipid peroxidation, and TUNEL staining. In addition, increased cerium concentration in the liver was associated with an increased Bax to Bcl-2 ratio, elevated caspase-9 and elevated caspase-3 protein levels. Taken together, these data suggest that exposure to CeO 2 nanoparticles is associated with increased oxidative stress and cellular apoptosis in the lungs. It is also evident that CeO2 nanoparticles can translocate to liver and induce hepatic damage. The hepatic damage induced by CeO2 nanoparticles is associated with increased oxidative stress and apoptosis in the liver.

Interfacial interactions of semiconductor with graphene and reduced graphene oxide: CeO2 as a case study.

PubMed

Xu, Liang; Huang, Wei-Qing; Wang, Ling-Ling; Huang, Gui-Fang

2014-11-26

The pursuit of superb building blocks of light harvesting systems has stimulated increasing efforts to develop graphene (GR)-based semiconductor composites for solar cells and photocatalysts. One critical issue for GR-based composites is understanding the interaction between their components, a problem that remains unresolved after intense experimental investigation. Here, we use cerium dioxide (CeO2) as a model semiconductor to systematically explore the interaction of semiconductor with GR and reduced graphene oxide (RGO) with large-scale ab initio calculations. The amount of charge transferred at the interfaces increases with the concentration of O atoms, demonstrating that the interaction between CeO2 and RGO is much stronger than that between CeO2 and GR due to the decrease of the average equilibrium distance between the interfaces. The stronger interaction between semiconductor and RGO is expected to be general, as evidenced by the results of two paradigms of TiO2 and Ag3PO4 coupled with RGO. The interfacial interaction can tune the band structure: the CeO2(111)/GR interface is a type-I heterojunction, while a type-II staggered band alignment exists between the CeO2(111) surface and RGO. The smaller band gap, type-II heterojunction, and negatively charged O atoms on the RGO as active sites are responsible for the enhanced photoactivity of CeO2/RGO composite. These findings can rationalize the available experimental reports and enrich our understanding of the interaction of GR-based composites for developing high-performance photocatalysts and solar cells.

Uptake of cerium oxide nanoparticles and its influence on functions of mouse leukemic monocyte macrophages

NASA Astrophysics Data System (ADS)

Zhou, Xiangyan; Wang, Bing; Jiang, Pengfei; Chen, Yiqi; Mao, Zhengwei; Gao, Changyou

2015-01-01

Exposure of the CeO2 nanoparticles (NPs) causes a public concern on their potential health risk due to their wide applications in the fields of fuel additive, commodities, pharmaceutical, and other industries. In this study, the interactions between two commercial CeO2 NPs (D-CeO2 from Degussa and PC-CeO2 from PlasmaChem) and mouse leukemic monocyte macrophage Raw264.7 cells were investigated to provide a fast and in-depth understanding of the biological influences of the NPs. Both types of the CeO2 NPs had a negative surface charge around -12 mV and showed a tendency to form aggregates with sizes of 191 ± 5.9 and 60.9 ± 2.8 nm in cell culture environment, respectively. The cellular uptake of the CeO2 NPs increased along with the increase of feeding dosage and prolongation of the culture time. The PC-CeO2 NPs had a faster uptake rate and reached higher cellular loading amount at the highest feeding concentration (200 µg/mL). In general, both types of the CeO2 NPs had rather small cytotoxicity even with a dosage as high as 200 µg/mL. The D-CeO2 NPs showed a relative stronger cytotoxicity especially at higher concentrations and longer incubation time. The NPs were dispersed in vacuoles (most likely endosomes and lysosomes) and cytoplasm. Although both types of the CeO2 NPs could suppress the production of reactive oxygen species, they impaired the mitochondria membrane potential to some extent. The cytoskeleton organization was altered and consequently the cell adhesion ability decreased after uptake of both types of the CeO2 NPs.

Structure and enhanced thermochromic performance of low-temperature fabricated VO 2/V 2O 3 thin film

DOE PAGES

Sun, Guangyao; Cao, Xun; Gao, Xiang; ...

2016-10-06

For VO 2-based smart window manufacture, it is a long-standing demand for high-quality thin films deposited at low temperature. In this paper, the thermochromic films of VO 2 were deposited by a magnetron sputtering method at a fairly low temperature of 250 °C without subsequent annealing by embedding a V 2O 3 interlayer. V 2O 3 acts as a seed layer to lower the depositing temperature and buffer layer to epitaxial grow VO 2 film. The VO 2/V 2O 3 films display high solar modulating ability and narrow hysteresis loop. Finally, our data can serve as a promising point formore » industrial production with high degree of crystallinity at a low temperature.« less

Solid state speciation of uranium and its local structure in Sr2CeO4 using photoluminescence spectroscopy.

PubMed

Sahu, M; Gupta, Santosh K; Jain, D; Saxena, M K; Kadam, R M

2018-04-15

An effort was taken to carry our speciation study of uranium ion in technologically important cerate host Sr 2 CeO 4 using time resolved photoluminescence spectroscopy. Such studies are not relevant only to nuclear industry but can give rich insight into fundamentals of 5f electron chemistry in solid state systems. In this work both undoped and varied amount of uranium doped Sr 2 CeO 4 compound is synthesized using complex polymerization method and is characterized systematically using X-ray diffraction (XRD), Raman spectroscopy, impedance spectroscopy and scanning electron microscopy (SEM). Both XRD and Raman spectroscopy confirmed the formation of pure Sr 2 CeO 4 which has tendency to decompose peritectically to SrCeO 3 and SrO at higher temperature. Uranium doping is confirmed by XRD. Uranium exhibits a rich chemistry owing to its variable oxidation state from +3 to +6. Each of them exhibits distinct luminescence properties either due to f-f transitions or ligand to metal charge transfer (LMCT). We have taken Sr 2 CeO 4 as a model host lattice to understand the photophysical characteristics of uranium ion in it. Emission spectroscopy revealed the stabilization of uranium as U (VI) in the form of UO 6 6- (octahedral uranate) in Sr 2 CeO 4 . Emission kinetics study reflects that uranate ions are not homogeneously distributed in Sr 2 CeO 4 and it has two different environments due to its stabilization at both Sr 2+ as well as Ce 4+ site. The lifetime population analysis interestingly pinpointed that majority of uranate ion resided at Ce 4+ site. The critical energy-transfer distance between the uranate ion was determined based on which the concentration quenching mechanism was attributed to electric multipolar interaction. These studies are very important in designing Sr 2 CeO 4 based optoelectronic material as well exploring it for actinides studies. Copyright © 2018 Elsevier B.V. All rights reserved.

Solid state speciation of uranium and its local structure in Sr2CeO4 using photoluminescence spectroscopy

NASA Astrophysics Data System (ADS)

Sahu, M.; Gupta, Santosh K.; Jain, D.; Saxena, M. K.; Kadam, R. M.

2018-04-01

An effort was taken to carry our speciation study of uranium ion in technologically important cerate host Sr2CeO4 using time resolved photoluminescence spectroscopy. Such studies are not relevant only to nuclear industry but can give rich insight into fundamentals of 5f electron chemistry in solid state systems. In this work both undoped and varied amount of uranium doped Sr2CeO4 compound is synthesized using complex polymerization method and is characterized systematically using X-ray diffraction (XRD), Raman spectroscopy, photoluminescence spectroscopy and scanning electron microscopy (SEM). Both XRD and Raman spectroscopy confirmed the formation of pure Sr2CeO4 which has tendency to decompose peritectically to SrCeO3 and SrO at higher temperature. Uranium doping is confirmed by XRD. Uranium exhibits a rich chemistry owing to its variable oxidation state from +3 to +6. Each of them exhibits distinct luminescence properties either due to f-f transitions or ligand to metal charge transfer (LMCT). We have taken Sr2CeO4 as a model host lattice to understand the photophysical characteristics of uranium ion in it. Emission spectroscopy revealed the stabilization of uranium as U (VI) in the form of UO66- (octahedral uranate) in Sr2CeO4. Emission kinetics study reflects that uranate ions are not homogeneously distributed in Sr2CeO4 and it has two different environments due to its stabilization at both Sr2+ as well as Ce4+ site. The lifetime population analysis interestingly pinpointed that majority of uranate ion resided at Ce4+ site. The critical energy-transfer distance between the uranate ion was determined based on which the concentration quenching mechanism was attributed to electric multipolar interaction. These studies are very important in designing Sr2CeO4 based optoelectronic material as well exploring it for actinides studies.

Plasma-assisted adsorption of elemental mercury on CeO2/TiO2 at low temperatures

NASA Astrophysics Data System (ADS)

Liu, Lu; Zheng, Chenghang; Gao, Xiang

2017-11-01

Mercury is a kind of pollutants contained in flue gas which is hazardous for human beings. In this work, CeO2 was packed in the discharge zone of a plasma reactor to adsorb elemental mercury at low temperatures. Plasma-catalyst reactor can remove Hg0 efficiently with CeO2/TiO2 catalysts packed in the discharge zone. The Hg0 concentration continued to decrease gradually when the plasma was turned on, but not sank rapidly. This tendency was different with other catalysts. The treatment of plasma to CeO2/TiO2 catalysts has a promotion effect on the adsorption of Hg0. Plasma has the effect of changing the surface properties of the catalysts and the changes would restitute if the condition changed. The long-running test demonstrated that this method is an effective way to remove Hg0. The removal efficiency remained at above 99% throughout 12 hours when plasma had been turned on (15kV, 0.5 g packed CeO2/TiO2).

Intracellular antioxidants dissolve man-made antioxidant nanoparticles: using redox vulnerability of nanoceria to develop a responsive drug delivery system.

PubMed

Muhammad, Faheem; Wang, Aifei; Qi, Wenxiu; Zhang, Shixing; Zhu, Guangshan

2014-01-01

Regeneratable antioxidant property of nanoceria has widely been explored to minimize the deleterious influences of reactive oxygen species. Limited information is, however, available regarding the biological interactions and subsequent fate of nanoceria in body fluids. This study demonstrates a surprising dissolution of stable and ultrasmall (4 nm) cerium oxide nanoparticles (CeO2 NPs) in response to biologically prevalent antioxidant molecules (glutathione, vitamin C). Such a redox sensitive behavior of CeO2 NPs is subsequently exploited to design a redox responsive drug delivery system for transporting anticancer drug (camptothecin). Upon exposing the CeO2 capped and drug loaded nanoconstruct to vitamin c or glutathione, dissolution-accompanied aggregation of CeO2 nanolids unleashes the drug molecules from porous silica to achieve a significant anticancer activity. Besides stimuli responsive drug delivery, immobilization of nanoceria onto the surface of mesoporous silica also facilitates us to gain a basic insight into the biotransformation of CeO2 in physiological mediums.

Investigating effects of nano cerium oxide reinforcement on mechanical properties of composite based on natural rubber

NASA Astrophysics Data System (ADS)

Bao, Le Quoc; Phan, Vu Hoang Giang; Khuyen, Nguyen Quang

2018-04-01

Polymer nanocomposites that based on combination of nanomaterials (such as nanoparticles, nanotubes, nanorods, nanofibers, and nanosheets) and polymeric matrices are receiving great attention in research and application. However, separate and homogenous dispersion rather than aggregates of nanoparticles into matrices meet big difficulty due to large interaction between nanoparticles. The poor dispersion leads to low properties of nanocomposites. In this study, we find out the appropriate method to separately disperse cerium oxides (CeO2) nanoparticles into natural rubber, aiming to increase mechanical properties of natural rubber. The SEM images were used to evaluate the dispersion of nano CeO2 in natural rubber matrix. The mechanical properties of nanocomposites were measured after vulcanization to investigate effects of nano CeO2 amount on prepared composite. The findings exhibited that the addition of CeO2 by dispersion of nano CeO2 in water via ultrasonication before mixing with rubber latex, significantly increase modulus, tear and wear resistance of natural rubber.

Effect of Nano CeO2 Addition on the Microstructure and Properties of a Cu-Al-Ni Shape Memory Alloy

NASA Astrophysics Data System (ADS)

Pandey, Abhishek; Jain, Ashish Kumar; Hussain, Shahadat; Sampath, V.; Dasgupta, Rupa

2016-08-01

This article deals with the effect of adding nano CeO2 to act as a grain pinner/refiner to a known Cu-Al-Ni shape memory alloy. Elements were taken in a predefined ratio to prepare 300 g alloy per batch and melted in an induction furnace. Casting was followed by homogenization at 1173 K (900 °C) and rolling to make sheets of 0.5-mm thickness. Further, samples were characterized for microstructure using optical and electron microscope, hardness, and different phase studies by X-ray and transformation temperatures by differential scanning calorimetry. X-ray peak broadenings and changes were investigated to estimate the crystallite size, lattice strain, and phase changes due to different processing steps. A nearly uniform distribution of CeO2 and better martensitic structure were observed with increasing CeO2. The addition of CeO2 also shows a visible effect on the transformation temperature and phase formation.

Growth and characterization of low composition Ge, x in epi-Si1‑x Gex (x  ⩽  10%) active layer for fabrication of hydrogenated bottom solar cell

NASA Astrophysics Data System (ADS)

Ajmal Khan, M.; Sato, R.; Sawano, K.; Sichanugrist, P.; Lukianov, A.; Ishikawa, Y.

2018-05-01

Semiconducting epi-Si1‑x Ge x alloys have promising features as solar cell materials and may be equally important for some other semiconductor device applications. Variation of the germanium compositional, x in epi-Si1‑x Ge x , makes it possible to control the bandgap between 1.12 eV and 0.68 eV for application in bottom solar cells. A low proportion of Ge in SiGe alloy can be used for photovoltaic application in a bottom cell to complete the four-terminal tandem structure with wide bandgap materials. In this research, we aimed to use a low proportion of Ge—about 10%—in strained or relaxed c-Si1‑x Ge x /c-Si heterojunctions (HETs), with or without insertion of a Si buffer layer grown by molecular beam epitaxy, to investigate the influence of the relaxed or strained SiGe active layer on the performance of HET solar cells grown using the plasma enhanced chemical vapor deposition system. Thanks to the c-Si buffer layer at the hetero-interface, the efficiency of these SiGe based HET solar cells was improved from 2.3% to 3.5% (fully strained and with buffer layer). The Jsc was improved, from 8 mA cm‑2 to 15.46 mA cm‑2, which might be supported by strained c-Si buffer layer at the hetero-interface, by improving the crystalline quality.

Preparation and evaluation of cerium oxide-bovine hydroxyapatite composites for biomedical engineering applications.

PubMed

Gunduz, O; Gode, C; Ahmad, Z; Gökçe, H; Yetmez, M; Kalkandelen, C; Sahin, Y M; Oktar, F N

2014-07-01

The fabrication and characterization of bovine hydroxyapatite (BHA) and cerium oxide (CeO2) composites are presented. CeO2 (at varying concentrations 1, 5 and 10wt%) were added to calcinated BHA powder. The resulting mixtures were shaped into green cylindrical samples by powder pressing (350MPa) followed by sintering in air (1000-1300°C for 4h). Density, Vickers microhardness (HV), compression strength, scanning electron microscopy (SEM) and X-ray diffraction (XRD) studies were performed on the products. The sintering behavior, microstructural characteristics and mechanical properties were evaluated. Differences in the sintering temperature (for 1wt% CeO2 composites) between 1200 and 1300°C, show a 3.3% increase in the microhardness (564 and 582.75HV, respectively). Composites prepared at 1300°C demonstrate the greatest compression strength with comparable results for 5 and 10wt% CeO2 content (106 and 107MPa) which are significantly better than those for 1wt% and those that do not include any CeO2 (90 and below 60MPa, respectively). The results obtained suggest optimal parameters to be used in preparation of BHA and CeO2 composites, while also highlighting the potential of such materials in several biomedical engineering applications. Copyright © 2014 Elsevier Ltd. All rights reserved.

Environmental Geochemistry of Cerium: Applications and Toxicology of Cerium Oxide Nanoparticles

PubMed Central

Dahle, Jessica T.; Arai, Yuji

2015-01-01

Cerium is the most abundant of rare-earth metals found in the Earth’s crust. Several Ce-carbonate, -phosphate, -silicate, and -(hydr)oxide minerals have been historically mined and processed for pharmaceutical uses and industrial applications. Of all Ce minerals, cerium dioxide has received much attention in the global nanotechnology market due to their useful applications for catalysts, fuel cells, and fuel additives. A recent mass flow modeling study predicted that a major source of CeO2 nanoparticles from industrial processing plants (e.g., electronics and optics manufactures) is likely to reach the terrestrial environment such as landfills and soils. The environmental fate of CeO2 nanoparticles is highly dependent on its physcochemical properties in low temperature geochemical environment. Though there are needs in improving the analytical method in detecting/quantifying CeO2 nanoparticles in different environmental media, it is clear that aquatic and terrestrial organisms have been exposed to CeO2 NPs, potentially yielding in negative impact on human and ecosystem health. Interestingly, there has been contradicting reports about the toxicological effects of CeO2 nanoparticles, acting as either an antioxidant or reactive oxygen species production-inducing agent). This poses a challenge in future regulations for the CeO2 nanoparticle application and the risk assessment in the environment. PMID:25625406

Environmental geochemistry of cerium: applications and toxicology of cerium oxide nanoparticles.

PubMed

Dahle, Jessica T; Arai, Yuji

2015-01-23

Cerium is the most abundant of rare-earth metals found in the Earth's crust. Several Ce-carbonate, -phosphate, -silicate, and -(hydr)oxide minerals have been historically mined and processed for pharmaceutical uses and industrial applications. Of all Ce minerals, cerium dioxide has received much attention in the global nanotechnology market due to their useful applications for catalysts, fuel cells, and fuel additives. A recent mass flow modeling study predicted that a major source of CeO2 nanoparticles from industrial processing plants (e.g., electronics and optics manufactures) is likely to reach the terrestrial environment such as landfills and soils. The environmental fate of CeO2 nanoparticles is highly dependent on its physcochemical properties in low temperature geochemical environment. Though there are needs in improving the analytical method in detecting/quantifying CeO2 nanoparticles in different environmental media, it is clear that aquatic and terrestrial organisms have been exposed to CeO2 NPs, potentially yielding in negative impact on human and ecosystem health. Interestingly, there has been contradicting reports about the toxicological effects of CeO2 nanoparticles, acting as either an antioxidant or reactive oxygen species production-inducing agent). This poses a challenge in future regulations for the CeO2 nanoparticle application and the risk assessment in the environment.

Growth And Characterization Of LPE CdHgTe/CdZnTe/CdZnTe Structure

NASA Astrophysics Data System (ADS)

Pelliciari, B.; Chamonal, J. P.; Destefanis, G. L.; Dicioccio, L.

1988-05-01

The liquid phase epitaxial technique is used to grow Hgl_x Cdx Te (x = .23) from a Te - rich solution onto a Cdl_y ZnyTe (y = .04) buffer layer grown from a Te-rich solution onto a Cdi_yZnyTe bulk substrate in an open tube multibin horizontal slider apparatus.Growth conditions and physical characterizations of both the buffer layer and the CdHgTe layer are given ; electrical properties of the CdHgTe layer are also presen-ted. PV detectors were successfully obtained on such a structure using an ion-implanted technology and their characteristics at 77 K for a 10.1 ,um cut-off wavelength are given.

The Control of Anisotropic Transport in Manganites by Stripy Domains

NASA Astrophysics Data System (ADS)

Ju, Changcheng; Lu, Xiaomei; Chu, Yinghao

2014-03-01

Epitaxial thin film acts as a significant tool to investigate novel phenomena of complex oxide systems. Extrinsic constraint1 of uniform or certain designed buffer layer strain could be easily implanted to these materials. However, the strain distribution might be quite complicated by involving micro- or nano-lattice distortions which could partially relax the strain and determine the complex phase diagrams of thin film, meanwhile introducing structural and physical inhomogeneities. In this work , we report 71° striped ferroelectric domains created in BFO can also epitaxially lock the perovskite manganites leading to the emerge of ordered structural domain. LSMO/BFO hetero-epitaxial samples are deposited by PLD. The 71° periodic striped domains and coherent growth are demonstrated by PFM and X-ray analysis. Plan-view TEM and X-ray RSM have been used to confirm the epitaxial relationships of the functional layers and IP lattice constant. Both the simulation and structural analysis demonstrate we can create a periodic ordered stripe structural domain in LSMO. And this will leave an anisotropic distribution of structural domain walls which makes it possible to capture the anisotropic tunneling for strong electron-lattice coupling in manganites. Temperature-dependent resistivity measurements reveal a substantial anisotropic resistivities and a remarkable shift of the MI transition between the perpendicular and parallel to the stripe domain directions.

CeO2 nanocubes-graphene oxide as durable and highly active catalyst support for proton exchange membrane fuel cell

PubMed Central

Lei, M.; Wang, Z. B.; Li, J. S.; Tang, H. L.; Liu, W. J.; Wang, Y. G.

2014-01-01

Rapid degradation of cell performance still remains a significant challenge for proton exchange membrane fuel cell (PEMFC). In this work, we develop novel CeO2 nanocubes-graphene oxide nanocomposites as durable and highly active catalyst support for proton exchange membrane fuel cell. We show that the use of CeO2 as the radical scavenger in the catalysts remarkably improves the durability of the catalyst. The catalytic activity retention of Pt-graphene oxide-8 wt.% CeO2 nanocomposites reaches as high as 69% after 5000 CV-cycles at a high voltage range of 0.8–1.23 V, in contrast to 19% for that of the Pt-graphene oxide composites. The excellent durability of the Pt-CeO2 nanocubes-graphene oxide catalyst is attributed to the free radical scavenging activity of CeO2, which significantly slows down the chemical degradation of Nafion binder in catalytic layers, and then alleviates the decay of Pt catalysts, resulting in the excellent cycle life of Pt-CeO2-graphene oxide nanocomposite catalysts. Additionally, the performance of single cell assembled with Nafion 211 membrane and Pt-CeO2-graphene oxide catalysts with different CeO2 contents in the cathode as well as the Pt-C catalysts in the anode are also recorded and discussed in this study. PMID:25491655

CeO2 nanocubes-graphene oxide as durable and highly active catalyst support for proton exchange membrane fuel cell.

PubMed

Lei, M; Wang, Z B; Li, J S; Tang, H L; Liu, W J; Wang, Y G

2014-12-10

Rapid degradation of cell performance still remains a significant challenge for proton exchange membrane fuel cell (PEMFC). In this work, we develop novel CeO2 nanocubes-graphene oxide nanocomposites as durable and highly active catalyst support for proton exchange membrane fuel cell. We show that the use of CeO2 as the radical scavenger in the catalysts remarkably improves the durability of the catalyst. The catalytic activity retention of Pt-graphene oxide-8 wt.% CeO2 nanocomposites reaches as high as 69% after 5000 CV-cycles at a high voltage range of 0.8-1.23 V, in contrast to 19% for that of the Pt-graphene oxide composites. The excellent durability of the Pt-CeO2 nanocubes-graphene oxide catalyst is attributed to the free radical scavenging activity of CeO2, which significantly slows down the chemical degradation of Nafion binder in catalytic layers, and then alleviates the decay of Pt catalysts, resulting in the excellent cycle life of Pt-CeO2-graphene oxide nanocomposite catalysts. Additionally, the performance of single cell assembled with Nafion 211 membrane and Pt-CeO2-graphene oxide catalysts with different CeO2 contents in the cathode as well as the Pt-C catalysts in the anode are also recorded and discussed in this study.

CeO2 nanocubes-graphene oxide as durable and highly active catalyst support for proton exchange membrane fuel cell

NASA Astrophysics Data System (ADS)

Lei, M.; Wang, Z. B.; Li, J. S.; Tang, H. L.; Liu, W. J.; Wang, Y. G.

2014-12-01

Rapid degradation of cell performance still remains a significant challenge for proton exchange membrane fuel cell (PEMFC). In this work, we develop novel CeO2 nanocubes-graphene oxide nanocomposites as durable and highly active catalyst support for proton exchange membrane fuel cell. We show that the use of CeO2 as the radical scavenger in the catalysts remarkably improves the durability of the catalyst. The catalytic activity retention of Pt-graphene oxide-8 wt.% CeO2 nanocomposites reaches as high as 69% after 5000 CV-cycles at a high voltage range of 0.8-1.23 V, in contrast to 19% for that of the Pt-graphene oxide composites. The excellent durability of the Pt-CeO2 nanocubes-graphene oxide catalyst is attributed to the free radical scavenging activity of CeO2, which significantly slows down the chemical degradation of Nafion binder in catalytic layers, and then alleviates the decay of Pt catalysts, resulting in the excellent cycle life of Pt-CeO2-graphene oxide nanocomposite catalysts. Additionally, the performance of single cell assembled with Nafion 211 membrane and Pt-CeO2-graphene oxide catalysts with different CeO2 contents in the cathode as well as the Pt-C catalysts in the anode are also recorded and discussed in this study.

Study of structural properties of cubic InN films on GaAs(001) substrates by molecular beam epitaxy and migration enhanced epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Casallas-Moreno, Y. L.; Perez-Caro, M.; Gallardo-Hernandez, S.

InN epitaxial films with cubic phase were grown by rf-plasma-assisted molecular beam epitaxy (RF-MBE) on GaAs(001) substrates employing two methods: migration-enhanced epitaxy (MEE) and conventional MBE technique. The films were synthesized at different growth temperatures ranging from 490 to 550 Degree-Sign C, and different In beam fluxes (BEP{sub In}) ranging from 5.9 Multiplication-Sign 10{sup -7} to 9.7 Multiplication-Sign 10{sup -7} Torr. We found the optimum conditions for the nucleation of the cubic phase of the InN using a buffer composed of several thin layers, according to reflection high-energy electron diffraction (RHEED) patterns. Crystallographic analysis by high resolution X-ray diffraction (HR-XRD)more » and RHEED confirmed the growth of c-InN by the two methods. We achieved with the MEE method a higher crystal quality and higher cubic phase purity. The ratio of cubic to hexagonal components in InN films was estimated from the ratio of the integrated X-ray diffraction intensities of the cubic (002) and hexagonal (1011) planes measured by X-ray reciprocal space mapping (RSM). For MEE samples, the cubic phase of InN increases employing higher In beam fluxes and higher growth temperatures. We have obtained a cubic purity phase of 96.4% for a film grown at 510 Degree-Sign C by MEE.« less

The role of electron-electron repulsion in the problem of epitaxial graphene on a metal: Simple estimates

NASA Astrophysics Data System (ADS)

Davydov, S. Yu.

2017-08-01

For single-layer graphene placed on a metal substrate, the influence of intra- and interatomic Coulomb repulsion of electrons ( U and G, respectively) on its phase diagram is considered in the framework of an extended Hartree-Fock theory. The general solution of the problem is presented, on the basis of which special cases allowing for analytical consideration are analyzed: free and epitaxial graphene with and without regard for the energy of the electron transition between neighboring atoms of graphene. Three regions of the phase diagram are considered: spin and charge density waves (SDW and CDW, respectively) and the semimetal (SM) state uniform in the spin and charge. The main attention is paid to undoped graphene. It is shown that the allowance for the interaction with a metal substrate expands the SM existence domain. However, in all the considered cases, the boundary between the SDW and CDW states is described by the equation U = zG, where z = 3 is the number of nearest neighbors in graphene. The widening of the SM state region also results from the doping of graphene, and the effect is independent of the sign of free carriers introduced into epitaxial graphene by the substrate. According to estimates made, the only state possible in the buffer layer is the metal-type SM state, whereas, in epitaxial graphene, the CDW state is possible. The influence of temperature on the phase diagram of epitaxial graphene is discussed.

Bioavailability of cerium oxide nanoparticles to Raphanus sativus L. in two soils.

PubMed

Zhang, Weilan; Musante, Craig; White, Jason C; Schwab, Paul; Wang, Qiang; Ebbs, Stephen D; Ma, Xingmao

2017-01-01

Cerium oxide nanoparticles (CeO 2 NP) are a common component of many commercial products. Due to the general concerns over the potential toxicity of engineered nanoparticles (ENPs), the phytotoxicity and in planta accumulation of CeO 2 NPs have been broadly investigated. However, most previous studies were conducted in hydroponic systems and with grain crops. For a few studies performed with soil grown plants, the impact of soil properties on the fate and transport of CeO 2 NPs was generally ignored even though numerous previous studies indicate that soil properties play a critical role in the fate and transport of environmental pollutants. The objectives of this study were to evaluate the soil fractionation and bioavailability of CeO 2 NPs to Raphanus sativus L (radish) in two soil types. Our results showed that the silty loam contained slightly higher exchangeable fraction (F1) of cerium element than did loamy sand soil, but significantly lower reducible (F2) and oxidizable (F3) fractions as CeO 2 NPs concentration increased. CeO 2 NPs associated with silicate minerals or the residue fraction (F4) dominated in both soils. The cerium concentration in radish storage root showed linear correlation with the sum of the first three fractions (r 2  = 0.98 and 0.78 for loamy sand and silty loam respectively). However, the cerium content in radish shoots only exhibited strong correlations with F1 (r 2  = 0.97 and 0.89 for loamy sand and silty loam respectively). Overall, the results demonstrated that soil properties are important factors governing the distribution of CeO 2 NPs in soil and subsequent bioavailability to plants. Copyright © 2015 Elsevier Masson SAS. All rights reserved.

Nanosecond laser switching of surface wettability and epitaxial integration of c-axis ZnO thin films with Si(111) substrates.

PubMed

Molaei, R; Bayati, M R; Alipour, H M; Estrich, N A; Narayan, J

2014-01-08

We have achieved integration of polar ZnO[0001] epitaxial thin films with Si(111) substrates where cubic yttria-stabilized zirconia (c-YSZ) was used as a template on a Si(111) substrate. Using XRD (θ-2θ and φ scans) and HRTEM techniques, the epitaxial relationship between the ZnO and the c-YSZ layers was shown to be [0001]ZnO || [111]YSZ and [21¯1¯0]ZnO || [1¯01](c-YSZ), where the [21¯1¯0] direction lies in the (0001) plane, and the [1¯01] direction lies in the (111) plane. Similar studies on the c-YSZ/Si interface revealed epitaxy as (111)YSZ || (111)Si and in-plane (110)YSZ || (110)Si. HRTEM micrographs revealed atomically sharp and crystallographically continuous interfaces. The ZnO epilayers were subsequently laser annealed by a single pulse of a nanosecond excimer KrF laser. It was shown that the hydrophobic behavior of the pristine sample became hydrophilic after laser treatment. XPS was employed to study the effect of laser treatment on surface stoichiometry of the ZnO epilayers. The results revealed the formation of oxygen vacancies, which are envisaged to control the observed hydrophilic behavior. Our AFM studies showed surface smoothing due to the coupling of the high energy laser beam with the surface. The importance of integration of c-axis ZnO with Si(111) substrates is emphasized using the paradigm of domain matching epitaxy on the c-YSZ[111] buffer platform along with their out-of-plane orientation, which leads to improvement of the performance of the solid-state devices. The observed ultrafast response and switching in photochemical characteristics provide new opportunities for application of ZnO in smart catalysts, sensors, membranes, DNA self-assembly and multifunctional devices.

Physical properties of nanostructured CeO2 thin films grown by SILAR method

NASA Astrophysics Data System (ADS)

Khan, Ishaque Ahmed; Belkhedkar, M. R.; Salodkar, R. V.; Ubale, A. U.

2018-05-01

Nanostructured CeO2 thin films have been deposited by Successive Ionic Layer Adsorption and Reaction (SILAR) method onto glass substrate using (CeNO3)3 6H2O and NaOH as cationic and anionic precursors respectively. The structural and morphological characterizations were carried out by means of X-ray diffraction, FTIR, FESEM and EDX studies. The highly resistive (1010 Ω cm) semiconducting CeO2 film exhibits 2.95 eV optical band gap.

The promoting effect of CeO2@Ce-O-P multi-core@shell structure on SO2 tolerance for selective catalytic reduction of NO with NH3 at low temperature

NASA Astrophysics Data System (ADS)

Yao, Weiyuan; Liu, Yue; Wu, Zhongbiao

2018-06-01

A series of CeO2@Ce-O-P "multi-core@shell" catalysts were synthesized in this paper for selective catalytic reduction (SCR) of NO with NH3. The experimental results had showed that CeO2@Ce-O-P-30:3 yielded best SO2 tolerance of an over 70% deNOx efficiency at 250 °C in the presence of 100 ppm SO2 for 20 h, which was much higher compared to pure Ce-O-P and CeO2 samples. Further characterization results indicated that Ce-O-P coating layer could somewhat inhibit sulfur depositing on the catalysts during SCR reaction in the presence of SO2, thereby protecting the active sites from SO2 poisoning. Especially, O2-TPD results illustrated that a great amount of active oxygen species were retained on used CeO2@Ce-O-P catalyst after a long term reaction. The synergetic effect of "multi-core@shell" structure could be attributed to such enhanced performances. The "core" CeO2 devoted abundant active oxygen sites to fulfill the SCR reaction. And the "shell" Ce-O-P could not only provide acid sites, but also protect the active oxygen species by avoiding the over-adsorption of SO2 on the catalyst. This work could provide a new way to increase the sulfur resistance for low temperature SCR catalysts.

Structure and photoluminescence studies of CeO2·CuAlO2 mixed metal oxide fabricated by co-precipitation method.

PubMed

Subhan, Md Abdus; Ahmed, Tanzir; Awal, M R; Kim, B Moon

2015-01-25

A novel mixed metal oxide, CeO2·CuAlO2 was fabricated by co-precipitation method in aqueous medium. CeO2·CuAlO2 was characterized by XRD, SEM, EDS, TEM, FTIR and PL spectra. The optical properties of the nanoparticles were studied by photoluminescence (PL) spectra. PL spectra at different excitations were recorded. The composite showed emission in UV, visible and NIR region depending on the excitation wavelength. The special spectral feature observed for this composite is that it showed six emission bands at 364, 409, 434, 448, 465 and 481 nm when excited at 298 nm. The green and red emissions observed at 512 and 669 nm are originated from cubic CeO2 phase when excited at 450 nm. The PL spectra were found to be dependent on excitation wavelength violating Kasha's rule. The X-ray diffraction reveals a cubic CeO2 phase and hexagonal CuAlO2 phase. EDS spectra revealed the presence of cerium (Ce), copper (Cu), aluminum (Al) and oxygen (O) elements. The particle size of the CeO2·CuAlO2 mixed oxide was estimated using Scherrer's formula, which was found to be in the range of 17.2-34.2 nm. The TEM image showed particles are almost uniform size of approximately 15-50 nm with spherical morphology. Copyright © 2014 Elsevier B.V. All rights reserved.

Structure and photoluminescence studies of CeO2·CuAlO2 mixed metal oxide fabricated by co-precipitation method

NASA Astrophysics Data System (ADS)

Subhan, Md Abdus; Ahmed, Tanzir; Awal, M. R.; Kim, B. Moon

2015-01-01

A novel mixed metal oxide, CeO2·CuAlO2 was fabricated by co-precipitation method in aqueous medium. CeO2·CuAlO2 was characterized by XRD, SEM, EDS, TEM, FTIR and PL spectra. The optical properties of the nanoparticles were studied by photoluminescence (PL) spectra. PL spectra at different excitations were recorded. The composite showed emission in UV, visible and NIR region depending on the excitation wavelength. The special spectral feature observed for this composite is that it showed six emission bands at 364, 409, 434, 448, 465 and 481 nm when excited at 298 nm. The green and red emissions observed at 512 and 669 nm are originated from cubic CeO2 phase when excited at 450 nm. The PL spectra were found to be dependent on excitation wavelength violating Kasha's rule. The X-ray diffraction reveals a cubic CeO2 phase and hexagonal CuAlO2 phase. EDS spectra revealed the presence of cerium (Ce), copper (Cu), aluminum (Al) and oxygen (O) elements. The particle size of the CeO2·CuAlO2 mixed oxide was estimated using Scherrer's formula, which was found to be in the range of 17.2-34.2 nm. The TEM image showed particles are almost uniform size of approximately 15-50 nm with spherical morphology.

Facile biological synthetic strategy to morphologically aligned CeO2/ZrO2 core nanoparticles using Justicia adhatoda extract and ionic liquid: Enhancement of its bio-medical properties.

PubMed

Pandiyan, Nithya; Murugesan, Balaji; Sonamuthu, Jegatheeswaran; Samayanan, Selvam; Mahalingam, Sundrarajan

2018-01-01

In this study, a typical green synthesis route has approached for CeO 2 /ZrO 2 core metal oxide nanoparticles using ionic liquid mediated Justicia adhatoda extract. This synthesis method is carried out at simple room temperature condition to obtain the core metal oxide nanoparticles. XRD, SEM and TEM studies employed to study the crystalline and surface morphological properties under nucleation, growth, and aggregation processes. CeO 2 /ZrO 2 core metal oxides display agglomerated nano stick-like structure with 20-45nm size. GC-MS spectroscopy confirms the presence of vasicinone and N,N-Dimethylglycine present in the plant extract, which are capable of converting the corresponding metal ion precursor to CeO 2 /ZrO 2 core metal oxide nanoparticles. In FTIR, the corresponding stretching for Ce-O and Zr-O bands indicated at 498 and 416cm -1 and Raman spectroscopy also supports typical stretching frequencies at 463 and 160cm -1 . Band gap energy of the CeO 2 /ZrO 2 core metal oxide is 3.37eV calculated from UV- DRS spectroscopy. The anti-bacterial studies performed against a set of bacterial strains the result showed that core metal oxide nanoparticles more susceptible to gram-positive (G+) bacteria than gram-negative (G-) bacteria. A unique feature of the antioxidant behaviors core metal oxides reduces the concentration of DPPH radical up to 89%. The CeO 2 /ZrO 2 core metal oxide nanoparticles control the S. marcescent bio-film formation and restrict the quorum sensing. The toxicology behavior of CeO 2 /ZrO 2 core metal oxide NPs is found due to the high oxygen site vacancies, ROS formation, smallest particle size and higher surface area. This type of green synthesis route may efficient and the core metal oxide nanoparticles will possess a good bio-medical agent in future. Copyright © 2017 Elsevier B.V. All rights reserved.

Growth and characterization of thin Cu-phthalocyanine films on MgO(001) layer for organic light-emitting diodes

PubMed Central

2012-01-01

Surface morphology and thermal stability of Cu-phthalocyanine (CuPc) films grown on an epitaxially grown MgO(001) layer were investigated by using atomic force microscope and X-ray diffractometer. The (002) textured β phase of CuPc films were prepared at room temperature beyond the epitaxial MgO/Fe/MgO(001) buffer layer by the vacuum deposition technique. The CuPc structure remained stable even after post-annealing at 350°C for 1 h under vacuum, which is an important advantage of device fabrication. In order to improve the device performance, we investigated also current-voltage-luminescence characteristics for the new top-emitting organic light-emitting diodes with different thicknesses of CuPc layer. PMID:23181826

Growth and characterization of thin Cu-phthalocyanine films on MgO(001) layer for organic light-emitting diodes.

PubMed

Bae, Yu Jeong; Lee, Nyun Jong; Kim, Tae Hee; Cho, Hyunduck; Lee, Changhee; Fleet, Luke; Hirohata, Atsufumi

2012-11-26

Surface morphology and thermal stability of Cu-phthalocyanine (CuPc) films grown on an epitaxially grown MgO(001) layer were investigated by using atomic force microscope and X-ray diffractometer. The (002) textured β phase of CuPc films were prepared at room temperature beyond the epitaxial MgO/Fe/MgO(001) buffer layer by the vacuum deposition technique. The CuPc structure remained stable even after post-annealing at 350°C for 1 h under vacuum, which is an important advantage of device fabrication. In order to improve the device performance, we investigated also current-voltage-luminescence characteristics for the new top-emitting organic light-emitting diodes with different thicknesses of CuPc layer.

Crystal orientation dependence of the dielectric properties for epitaxial BaZr0.15Ti0.85O3 thin films

NASA Astrophysics Data System (ADS)

Miao, J.; Yuan, J.; Wu, H.; Yang, S. B.; Xu, B.; Cao, L. X.; Zhao, B. R.

2007-01-01

Epitaxial Ba0.15Zr0.85TiO3 (BZT) ferroelectric thin films with (001), (011), and (111) orientations were, respectively, grown on La0.67Sr0.33MnO3 (LSMO) buffered LaAlO3 substrates by pulsed laser deposition method. The dc electric-field dependence of permittivity and dielectric loss of (001)-, (011)-, and (111)-oriented BZT/LSMO heterostructures obeys the Johnson formula, and the ac electric-field dependence of that obeys the Rayleigh law under the subswitching field region. The anisotropic dielectric properties are attributed to the higher mobility of the charge carriers, the concentration of mobile interfacial domain walls, and boundaries in the (111)-oriental films than in the (110)- and (100)-oriented films.

FinalTechRep_DE_EE0007363_15

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahrenkiel, Phil

The primary objective of the project was to develop Ga0.82In0.18As (GaInAs) solar cells grown on epilayers of elemental Al. At this composition, GaInAs has a nearly optimal bandgap (1.16 eV) for a single-junction photovoltaic device. However, GaInAs lacks a convenient, lattice-matched substrate, restricting most investigations to metamorphic structures. The metal Al is, in fact, precisely lattice-matched to GaInAs in the orientation GaInAs (001)[100]||Al(001)[110]. At present, however, epi-ready Al substrates are not readily available commercially and are subject to oxidation. However, epitaxial Al buffer layers could enable control of defect generation, thermal and light management, and rapid epitaxial lift-off for ultrathinmore » devices.« less

Metamorphic Epitaxy for Multijunction Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

France, Ryan M.; Dimroth, Frank; Grassman, Tyler J.

Multijunction solar cells have proven to be capable of extremely high efficiencies by combining multiple semiconductor materials with bandgaps tuned to the solar spectrum. Reaching the optimum set of semiconductors often requires combining high-quality materials with different lattice constants into a single device, a challenge particularly suited for metamorphic epitaxy. In this article, we describe different approaches to metamorphic multijunction solar cells, including traditional upright metamorphic, state-of-the-art inverted metamorphic, and forward-looking multijunction designs on silicon. We also describe the underlying materials science of graded buffers that enables metamorphic subcells with low dislocation densities. Following nearly two decades of research, recentmore » efforts have demonstrated high-quality lattice-mismatched multijunction solar cells with very little performance loss related to the mismatch, enabling solar-to-electric conversion efficiencies over 45%.« less

Temperature controlled evolution of monoclinic to super-tetragonal phase of epitaxial BiFeO3 thin films on La0.67Sr0.33MnO3 buffered SrTiO3 substrate

NASA Astrophysics Data System (ADS)

Singh, Anar; Kaifeng, Dong; Chen, Jing-Sheng

2018-03-01

Epitaxial BiFeO3 thin films of 130nm were deposited by pulsed laser deposition (PLD) technique on La0.67Sr0.33MnO3 buffered SrTiO3 (001) substrate at various temperatures under different ambient oxygen pressures. Reciprocal space mapping reveals that, with decreasing temperature and oxygen pressure, the broadly reported monoclinic phase (MA) of BiFeO3 thin film initially transforms to a tetragonal phase (T1) with c/a =1.05 (1) in a narrow girth of deposition condition and then to a super-tetragonal phase (T2) with giant c/a = 1.24 (1), as confirmed by reciprocal space mapping using high resolution x-ray diffraction. The surface morphology of the films reveals the island growth of the BiFeO3 films deposited at low temperatures. We propose that the transformation from monoclinic to the super-tetragonal phase is essentially due to the manifestation of excess local strain as a result of the island growth. This study offers a recipe to grow the super-tetragonal phase of BiFeO3, with giant c/a =1.24 (1) which exhibits exceptionally large ferroelectric polarization, on ferromagnetic layer La0.67Sr0.33MnO3. This phase of BiFeO3 can be utilized for the ferroelectric control of magnetism at the interface of BiFeO3 and La0.67Sr0.33MnO3.

Colloidal stability of CeO2 nanoparticles coated with either natural organic matter or organic polymers under various hydrochemical conditions

NASA Astrophysics Data System (ADS)

Dippon, Urs; Pabst, Silke; Klitzke, Sondra

2016-04-01

The worldwide marked for engineered nanoparticles (ENPs) is growing and concerns on the environmental fate- and toxicity of ENPs are rising. Understanding the transport of ENPs within and between environmental compartments such as surface water and groundwater is crucial for exposition modeling, risk assessment and ultimately the protection of drinking water resources. The transport of ENPs is strongly influenced by the surface properties and aggregation behavior of the particles, which is strongly controlled by synthetic and natural organic coatings. Both, surface properties and aggregation characteristics are also key properties for the industrial application of ENPs, which leads to the development and commercialization of an increasing number of surface-functionalized ENPs. These include metals and oxides such as Cerium dioxide (CeO2) with various organic coatings. Therefore, we investigate CeO2 ENPs with different surface coatings such as weakly anionic polyvinyl alcohol (PVA) or strongly anionic poly acrylic acid (PAA) with respect to their colloidal stability in aqueous matrix under various hydrochemical conditions (pH, ionic strength) and their transport behavior in sand filter columns. Furthermore, we investigate the interaction of naturally occurring organic matter (NOM) with CeO2 ENPs and its effect on surface charge (zeta potential), colloidal stability and transport. While uncoated CeO2 ENPs aggregate at pH > 4 in aqueous matrix, our results show that PAA and PVA surface coatings as well as NOM sorbed to CeO2-NP surfaces can stabilize CeO2 ENPs under neutral and alkaline pH conditions in 1 mM KCl solution. Under slightly acidic conditions, differences between the three particle types were observed. PVA can stabilize particle suspensions in presence of 1 mM KCl at pH > 4.3, PAA at pH >4.0 and NOM at >3.2. While the presence of KCl did not influence particle size of NOM-CeO2 ENPs, CaCl2 at >2 mM lead to aggregation. Further results on the influence of KCl and CaCl2 on aggregation of coated CeO2 ENPs and transport in sand filter columns will be presented.

Nanoparticle-based electrochemical sensors for the detection of lactate and hydrogen peroxide

NASA Astrophysics Data System (ADS)

Uzunoglu, Aytekin

In the present study, electrochemical sensors for the detection of lactate and hydrogen peroxide were constructed by exploiting the physicochemical properties of metal ad metal oxide nanoparticles. This study can be divided into two main sections. While chapter 2, 3, and 4 report on the construction of electrochemical lactate biosensors using CeO2 and CeO2-based mixed metal oxide nanoparticles, chapter 5 and 6 show the development of electrochemical hydrogen peroxide sensors by the decoration of the electrode surface with palladium-based nanoparticles. First generation oxidase enzyme-based sensors suffer from oxygen dependency which results in errors in the response current of the sensors in O2-lean environments. To address this challenge, the surface of the sensors must be modified with oxygen rich materials. In this regard, we developed a novel electrochemical lactate biosensor design by exploiting the oxygen storage capacity of CeO2 and CeO 2-CuO nanoparticles. By the introduction of CeO2 nanoparticles into the enzyme layer of the sensors, negative interference effect of ascorbate which resulted from the formation of oxygen-lean regions was eliminated successfully. When CeO2-based design was exposed to higher degree of O2 -depleted environments, however, the response current of the biosensors experienced an almost 21 % decrease, showing that the OSC of CeO2 was not high enough to sustain the enzymatic reactions. When CeO2-CuO nanoparticles, which have 5 times higher OSC than pristine CeO2, were used as an oxygen supply in the enzyme layer, the biosensors did not show any drop in the performance when moving from oxygen-rich to oxygen-lean conditions. In the second part of the study, PdCu/SPCE and PdAg/rGO-based electrochemical H2O2 sensors were designed and their performances were evaluated to determine their sensitivity, linear range, detection limit, and storage stability. In addition, practical applicability of the sensors was studied in human serum. The chronoamperometry results showed that the PdCu/SPCE sensors yielded a high sensitivity (396.7 microA mM -1 cm-2), a wide linear range (0.5 -11 mM), and a low limit of detection (0.7 microM) at the applied potential of -0.3 V. For PdAg/rGO sensors, a high sensitivity of 247.6 +/- 2.7 microA˙mM -1˙cm-2 was obtained towards H2O 2 in a linear range of 0.05 mM to 28 mM.

Investigation of the physical, optical, and photocatalytic properties of CeO2/Fe-doped InVO4 composite

NASA Astrophysics Data System (ADS)

Chaison, Jindaporn; Wetchakun, Khatcharin; Wetchakun, Natda

2017-12-01

The CeO2/Fe-doped InVO4 composites with various Fe concentrations (0.5, 1.0, 2.0, 5.0 and 6.0 mol%) was synthesized by homogeneous precipitation and hydrothermal methods. The as-synthesized samples were characterized by powder X-ray diffraction (XRD), Brunauer Emmett and Teller (BET)-specific surface area, field emission scanning electron microscopy (FE-SEM), transmission electron microscopy (TEM), energy-dispersive X-ray spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), and UV-visible diffuse reflectance spectroscopy (DRS). Fe-doping into InVO4 crystal induces the distortion of the crystalline structure, the transformation of InVO4 morphology, and the new energy subband level generation of Fe between the CB and VB edge of InVO4. The electron excitation from the VB to Fe orbitals results in the decreased band gap and the extended absorption of visible-light, and thus enhances its photocatalytic performance. Visible-light-driven photocatalytic degradation of Rhodamine B (RhB) dye in water was used to evaluate the photocatalytic performance of CeO2/Fe-doped InVO4 composites. The results revealed that there is an optimum Fe (5.0 mol %) doping level. The composite with the optimum doping level obtains high photocatalytic activity of CeO2/Fe-doped InVO4 composite compared to pure CeO2 and pure InVO4 host. The increase of photocatalytic activity of CeO2/Fe-doped InVO4 composite was ascribed to the surface area, crystal defect, and band gap energy. Moreover, the photocatalytic enhancement is also because iron ions act as a trapping site, which results in the higher separation efficiency of photogenerated electrons and holes pairs in the CeO2/InVO4 composite. The evaluation of radical scavengers confirmed that hydroxyl radical was the main active species during the photodegradation of RhB. These synergistic effects are responsible for the enhanced photocatalytic activity of CeO2/Fe-doped InVO4 composite. Furthermore, the possible enhanced photocatalytic mechanism of the CeO2/Fe-doped InVO4 composite was also proposed based on the calculation of band position.

A composite material with CeO2-ZrO2 nanocrystallines embedded in SiO2 matrices and its enhanced thermal stability and oxygen storage capacity

NASA Astrophysics Data System (ADS)

Yang, Runnong; Liu, Yumei; Yu, Lin; Zhao, Xiangyun; Yang, Xiaobo; Sun, Ming; Luo, Junyin; Fan, Qun; Xiao, Jianming; Zhao, Yuzhong

2018-06-01

A simple hydrothermal procedure is introduced, which leads to the successful synthesis of a new composite material with fine CeO2-ZrO2 nanocrystallites embedded in amorphous and porous SiO2 matrices. The composite material possesses an extraordinary high thermal stability. After being calcined at 1000 °C, it retains CeO2-ZrO2 nanocrystallites of the size around 5 nm, a BET-specific surface area of 165 m2/g, and an oxygen storage capacity of 468 μmol/g. No phase segregation for CeO2-ZrO2 nanocrystallites is detected and the SiO2 matrices remain not crystallized. The composite material shows a great potential as a support of three-way catalyst, as evidenced in catalytic tests with supported Pt.

In vitro release and biological activities of Carum copticum essential oil (CEO) loaded chitosan nanoparticles.

PubMed

Esmaeili, Akbar; Asgari, Azadeh

2015-11-01

In recent years, the unparalleled and functional properties of essential oils have been extensively reported, but the sensitivity of essential oils to environmental factors and their poor aqueous solubility have limited their applications in industries. Hence, we encapsulated CEO in chitosan nanoparticles by an emulsion-ionic gelation with pantasodium tripolyphosphate (TPP) and sodium hexametaphosphte (HMP), separately, as crosslinkers. The nanoparticles were analyzed by Fourier transform infrared spectroscopy (FT-IR), Ultraviolet-visible spectroscopy (UV-vis), differential scanning calorimetry (DSC), scanning electron microscope (SEM) and dynamic light scattering (DLS). The encapsulation efficiency (EE) and loading capacity (LC) of CEO in chitosan nanoparticles increased with the increase of initial CEO amount. The nanoparticles displayed an average size of 30-80nm with a spherical shape and regular distribution. In vitro release profiles exhibited an initial burst release and followed by a sustained CEO release at different pH conditions. The amount of CEO release from chitosan nanoparticles was higher in acidic pH to basic or neutral pH, respectively. The biological properties of CEO, before and after the encapsulation process were evaluated by 2,2-diphenyl-1-picrylhydrazyl radical (DPPH) and agar disk diffusion method, respectively. The results indicated the encapsulation of CEO in chitosan nanoparticles could be protected the quality. Copyright © 2015 Elsevier B.V. All rights reserved.

Mg Doping Induced Effects on Structural, Optical, and Electrical Properties as Well as Cytotoxicity of CeO2 Nanostructures

NASA Astrophysics Data System (ADS)

Iqbal, Javed; Jan, Tariq; Awan, M. S.; Naqvi, Sajjad Haider; Badshah, Noor; ullah, Asmat; Abbas, Fazzal

2016-04-01

Here, Mg x Ce1- x O2 (where x = 0, 0.01, 0.02, 0.03, 0.04, and 0.05) nanostructures have been successfully synthesized by using a simple, easy, and cost-effective soft chemical method. X-ray diffraction (XRD) patterns substantiate the single-phase formation of a CeO2 cubic fluorite structure for all samples. Infrared spectroscopy results depict the presence of peaks only related to Ce-O bonding, which confirms the XRD results. It has been observed via ultraviolet (UV)-visible spectroscopy that Mg doping has tuned the optical band gap of CeO2 significantly. The electrical conductivity of CeO2 nanostructures has been found to increase with Mg doping, which is attributed to enhancement in carrier concentration due to the different valance states of dopant and host ions. Selective cytotoxic behavior of Mg x Ce1- x O2 nanostructures has been determined for neuroblastoma (SH-SY5Y) cancerous and HEK-293 healthy cells. Both doped and undoped CeO2 nanostructures have been found to be toxic for cancer cells and safe toward healthy cells. This selective toxic behavior of the synthesized nanostructures has been assigned to the different levels of reactive oxygen species (ROS) generation in different types of cells. This makes the synthesized nanostructures a potential option for cancer therapy in the near future.

Transformation of pristine and citrate-functionalized CeO2 nanoparticles in a laboratory-scale activated sludge reactor.

PubMed

Barton, Lauren E; Auffan, Melanie; Bertrand, Marie; Barakat, Mohamed; Santaella, Catherine; Masion, Armand; Borschneck, Daniel; Olivi, Luca; Roche, Nicolas; Wiesner, Mark R; Bottero, Jean-Yves

2014-07-01

Engineered nanomaterials (ENMs) are used to enhance the properties of many manufactured products and technologies. Increased use of ENMs will inevitably lead to their release into the environment. An important route of exposure is through the waste stream, where ENMs will enter wastewater treatment plants (WWTPs), undergo transformations, and be discharged with treated effluent or biosolids. To better understand the fate of a common ENM in WWTPs, experiments with laboratory-scale activated sludge reactors and pristine and citrate-functionalized CeO2 nanoparticles (NPs) were conducted. Greater than 90% of the CeO2 introduced was observed to associate with biosolids. This association was accompanied by reduction of the Ce(IV) NPs to Ce(III). After 5 weeks in the reactor, 44 ± 4% reduction was observed for the pristine NPs and 31 ± 3% for the citrate-functionalized NPs, illustrating surface functionality dependence. Thermodynamic arguments suggest that the likely Ce(III) phase generated would be Ce2S3. This study indicates that the majority of CeO2 NPs (>90% by mass) entering WWTPs will be associated with the solid phase, and a significant portion will be present as Ce(III). At maximum, 10% of the CeO2 will remain in the effluent and be discharged as a Ce(IV) phase, governed by cerianite (CeO2).

Integration of strained and relaxed silicon thin films on silicon wafers via engineered oxide heterostructures: Experiment and theory

NASA Astrophysics Data System (ADS)

Seifarth, O.; Dietrich, B.; Zaumseil, P.; Giussani, A.; Storck, P.; Schroeder, T.

2010-10-01

Strained and relaxed single crystalline Si on insulator systems is an important materials science approach for future Si-based nanoelectronics. Layer transfer techniques are the dominating global integration approach over the whole wafer system but are difficult to scale down for local integration purposes limited to the area of the future device. In this respect, the heteroepitaxy approach by two simple subsequent epitaxial deposition steps of the oxide and the Si thin film is a promising way. We introduce tailored (Pr2O3)1-x(Y2O3)x oxide heterostructures on Si(111) as flexible heteroepitaxy concept for the integration of either strained or fully relaxed single crystalline Si thin films. Two different buffer concepts are explored by a combined experimental and theoretical study. First, the growth of fully relaxed single crystalline Si films is achieved by the growth of mixed PrYO3 insulators on Si(111) whose lattice constant is matched to Si. Second, isomorphic oxide-on-oxide epitaxy is exploited to grow strained Si films on lattice mismatched Y2O3/Pr2O3/Si(111) support systems. A thickness dependent multilayer model, based on Matthew's approach for strain relaxation by misfit dislocations, is presented to describe the experimental data.

Growth and characterization of high crystalline quality Co2FeAlxSi1-x Heusler alloy films on MgAl2O4(001) substrates

NASA Astrophysics Data System (ADS)

Peters, Brian; Blum, Christian; Woodward, Patrick; Wurmehl, Sabine; Yang, Fengyuan

2013-03-01

A number of Heusler alloys have been predicted to be half-metallic and are thus ideal candidates for use in spintronics. Co2FeAlxSi1-x has been predicted and shown to have some of the highest Tc, saturation magnetization and lowest magnetic damping constant among Heusler half-metals. Here we outline the growth and characterization of the highest crystalline quality epitaxial Heusler films using a novel off-axis UHV sputtering technique. We grow these films onto a closely lattice matched MgAl2O4(001) substrate, without the need for a Cr-buffer layer or post annealing, as has been done previously. This eliminates the diffusion of Cr across the interface, thus improving the purity and crystallinity of the films at the interface. X-ray diffraction results demonstrate epitaxial films with distinct Laue oscillations and rocking curves of FWHM as low as 0.0035°, which demonstrates the highest crystalline quality for Heusler films reported to date. Magnetic measurements show highly square hysteresis loops with a remanence of 95-98%, near ideal saturation magnetization, very small coercivities - between 3-8 Oe, pronounced magnetocrystalline anisotropy. Department of Chemistry, The Ohio State University

Growth Optimization of Metal-polar III-Nitride High-electron-mobility Transistor Structures by Molecular Beam Epitaxy

NASA Astrophysics Data System (ADS)

Kaun, Stephen William

GaN-based high-electron-mobility transistors (HEMTs) will play an important role in the next generation of high-frequency amplifiers and power-switching devices. Since parasitic conduction (leakage) through the GaN buffer layer and (Al,Ga,In)N barrier reduces the efficiency of operation, HEMT performance hinges on the epitaxial quality of these layers. Increasing the sheet charge density and mobility of the two-dimensional electron gas (2DEG) is also essential for reducing the channel resistance and improving output. The growth conditions applied in plasma-assisted molecular beam epitaxy (PAMBE) and ammonia-based molecular beam epitaxy (NH3-MBE) that result in high-quality metal-polar HEMT structures are described. The effects of threading dislocations on the gate leakage and channel conductivity of AlGaN/GaN HEMTs were studied in detail. For this purpose, a series of HEMT structures were grown on GaN templates with threading dislocation densities (TDDs) that spanned three orders of magnitude. There was a clear trend of reduced gate leakage with reduced TDD for HEMTs grown by Ga-rich PAMBE; however, a reduction in TDD also entailed an increase in buffer leakage. By reducing the unintentionally doped (UID) GaN buffer thickness and including an AlGaN back barrier, a HEMT regrown by Ga-rich PAMBE on low-TDD free-standing (FS) GaN (~5 x 107 cm-2 TDD) yielded a three-terminal breakdown voltage greater than 50 V and a power output (power-added efficiency) of 6.7 W/mm (50 %) at 4 GHz with a 40 V drain bias. High TDD was then shown to severely degrade the 2DEG mobility of AlxGa1-xN/GaN (x = 0.24, 0.12, 0.06) and AlGaN/AlN/GaN heterostructures grown by Ga-rich PAMBE. By regrowing on low-TDD FS GaN and including a 2.5 nm AlN interlayer, an Al0.24Ga0.76N/AlN/GaN heterostructure achieved a room temperature (RT) 2DEG sheet resistance of 169 Ω/□. As evidenced by atom probe tomography, the AlN interlayer grown by Ga-rich PAMBE was pure with abrupt interfaces. The pure AlN interlayer greatly reduced alloy-related scattering. When AlGaN/AlN/GaN heterostructures were grown by NH3-MBE at 820 °C, the 2DEG sheet density was lower than expected. These AlN interlayers were shown to have a significant concentration of Ga impurities by atom probe tomography. The source of these impurities was most likely the decomposition of the underlying GaN layers, as reduction of the growth temperature below 750 °C yielded a much lower concentration of Ga impurities. Flux optimization and application of an In surfactant was necessary to reduce the interface roughness in AlGaN/AlN/GaN heterostructures grown by NH3-MBE at low temperature, yielding sheet resistances below 300 Ω/□. The growth of InAlN/(GaN)/(AlN)/GaN heterostructures with lattice-matched In0.17Al0.83N barriers by N-rich PAMBE is also described. Through flux optimization, the columnar microstructure previously observed in N-rich PAMBE-grown InAlN layers was eliminated. By including a 3 nm AlN interlayer and 2 nm GaN interlayer, an In0.17Al0.83N/GaN/AlN/GaN heterostructure regrown on low-TDD FS GaN achieved an exceptionally low RT 2DEG sheet resistance of 145 Ω/□.

Preparation and Characterization of Graphite Waste/CeO2 Composites

NASA Astrophysics Data System (ADS)

Kusrini, E.; Utami, C. S.; Nasruddin; Prasetyanto, E. A.; Bawono, Aji A.

2018-03-01

In this research, the chemical modification of graphite waste with CeO2 was developed and characterized. Graphite waste was pretreated with mechanical to obtain the size 200 mesh (75 μm), and thermal methods at 110°C oven for 6 hours. Here, we demonstrate final properties of graphite before modification (GBM), activated graphite (GA) and graphite/CeO2 composite with variation of 0.5, 1 and 2 g of CeO2 (G0.5; G1; G2). The effect of CeO2 concentration was observed. The presence of cerium in modified graphite samples (G0.5; G1; G2) were analyzed using SEM-EDX. The results show that the best surface area was found in G2 is 26.82 m2/g. The presence of CeO2 onto graphite surface does not significantly increase the surface area of composites.

Microstructure and Optical Properties of Nonpolar m-Plane GaN Films Grown on m-Plane Sapphire by Hydride Vapor Phase Epitaxy

NASA Astrophysics Data System (ADS)

Wei, Tongbo; Duan, Ruifei; Wang, Junxi; Li, Jinmin; Huo, Ziqiang; Yang, Jiankun; Zeng, Yiping

2008-05-01

Thick nonpolar (1010) GaN layers were grown on m-plane sapphire substrates by hydride vapor phase epitaxy (HVPE) using magnetron sputtered ZnO buffers, while semipolar (1013) GaN layers were obtained by the conventional two-step growth method using the same substrate. The in-plane anisotropic structural characteristics and stress distribution of the epilayers were revealed by high resolution X-ray diffraction and polarized Raman scattering measurements. Atomic force microscopy (AFM) images revealed that the striated surface morphologies correlated with the basal plane stacking faults for both (1010) and (1013) GaN films. The m-plane GaN surface showed many triangular-shaped pits aligning uniformly with the tips pointing to the c-axis after etching in boiled KOH, whereas the oblique hillocks appeared on the semipolar epilayers. In addition, the dominant emission at 3.42 eV in m-plane GaN films displayed a red shift with respect to that in semipolar epilayers, maybe owing to the different strain states present in the two epitaxial layers.

Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si.

PubMed

Tanaka, Atsunori; Choi, Woojin; Chen, Renjie; Dayeh, Shadi A

2017-10-01

Heteroepitaxial growth of lattice mismatched materials has advanced through the epitaxy of thin coherently strained layers, the strain sharing in virtual and nanoscale substrates, and the growth of thick films with intermediate strain-relaxed buffer layers. However, the thermal mismatch is not completely resolved in highly mismatched systems such as in GaN-on-Si. Here, geometrical effects and surface faceting to dilate thermal stresses at the surface of selectively grown epitaxial GaN layers on Si are exploited. The growth of thick (19 µm), crack-free, and pure GaN layers on Si with the lowest threading dislocation density of 1.1 × 10 7 cm -2 achieved to date in GaN-on-Si is demonstrated. With these advances, the first vertical GaN metal-insulator-semiconductor field-effect transistors on Si substrates with low leakage currents and high on/off ratios paving the way for a cost-effective high power device paradigm on an Si CMOS platform are demonstrated. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Epitaxial growth of high quality InP on Si substrates: The role of InAs/InP quantum dots as effective dislocation filters

NASA Astrophysics Data System (ADS)

Shi, Bei; Li, Qiang; Lau, Kei May

2018-05-01

Monolithic integration of InP on a Si platform ideally facilitates on-chip light sources in silicon photonic applications. In addition to the well-developed hybrid bonding techniques, the direct epitaxy method is spawning as a more strategic and potentially cost-effective approach to monolithically integrate InP-based telecom lasers. To minimize the unwanted defects within the InP crystal, we explore multiple InAs/InP quantum dots as dislocation filters. The high quality InP buffer is thus obtained, and the dislocation filtering effects of the quantum dots are directly examined via both plan-view and cross-sectional transmission electron microscopy, along with room-temperature photoluminescence. The defect density on the InP surface was reduced to 3 × 108/cm2, providing an improved optical property of active photonic devices on Si substrates. This work offers a novel solution to advance large-scale integration of InP on Si, which is beneficial to silicon-based long-wavelength lasers in telecommunications.

Prophylactic Treatment with Cerium Oxide Nanoparticles Attenuate Hepatic Ischemia Reperfusion Injury in Sprague Dawley Rats.

PubMed

Manne, Nandini D P K; Arvapalli, Ravikumar; Graffeo, Vincent A; Bandarupalli, Venkata V K; Shokuhfar, Tolou; Patel, Sweetu; Rice, Kevin M; Ginjupalli, Gautam Kumar; Blough, Eric R

2017-01-01

Hepatic ischemia reperfusion is one the main causes for graft failure following transplantation. Although, the molecular events that lead to hepatic failure following ischemia reperfusion (IR) are diverse and complex, previous studies have shown that excessive formation of reactive oxygen species (ROS) are responsible for hepatic IR injury. Cerium oxide (CeO2) nanoparticles have been previously shown to act as an anti-oxidant and anti-inflammatory agent. Here, we evaluated the protective effects of CeO2 nanoparticles on hepatic ischemia reperfusion injury. Male Sprague Dawley rats were randomly assigned to one of the four groups: Control, CeO2 nanoparticle only, hepatic ischemia reperfusion (IR) group and hepatic ischemia reperfusion (IR) plus CeO2 nanoparticle group (IR+ CeO2). Partial warm hepatic ischemia was induced in left lateral and median lobes for 1h, followed by 6h of reperfusion. Animals were sacrificed after 6h of reperfusion and blood and tissue samples were collected and processed for various biochemical experiments. Prophylactic treatment with CeO2 nanoparticles (0.5mg/kg i.v (IR+CeO2 group)) 1 hour prior to hepatic ischemia and subsequent reperfusion injury lead to a decrease in serum levels of alanine aminotransaminase and lactate dehydrogenase at 6 hours after reperfusion. These changes were accompanied by significant decrease in hepatocyte necrosis along with reduction in several serum inflammatory markers such as macrophage derived chemokine, macrophage inflammatory protein-2, KC/GRO, myoglobin and plasminogen activator inhibitor-1. However, immunoblotting demonstrated no significant changes in the levels of apoptosis related protein markers such as bax, bcl2 and caspase 3 in IR and IR+ CeO2 groups at 6 hours suggesting necrosis as the main pathway for hepatocyte death. Taken together, these data suggest that CeO2 nanoparticles attenuate IR induced cell death and can be used as a prophylactic agent to prevent hepatic injury associated with graft failure. © 2017 The Author(s). Published by S. Karger AG, Basel.

Biaxially textured articles formed by plastic deformation

DOEpatents

Goyal, Amit

2001-01-01

A method of preparing a biaxially textured article comprises the steps of providing a metal preform, coating or laminating the preform with a metal layer, deforming the layer to a sufficient degree, and rapidly recrystallizing the layer to produce a biaxial texture. A superconducting epitaxial layer may then be deposited on the biaxial texture. In some embodiments the article further comprises buffer layers, electromagnetic devices or electro-optical devices.

Method for making biaxially textured articles by plastic deformation

DOEpatents

Goyal, Amit

2002-01-01

A method of preparing a biaxially textured article comprises the steps of providing a metal preform, coating or laminating the preform with a metal layer, deforming the layer to a sufficient degree, and rapidly recrystallizing the layer to produce a biaxial texture. A superconducting epitaxial layer may then be deposited on the biaxial texture. In some embodiments the article further comprises buffer layers, electromagnetic devices or electro-optical devices.

Influence of two types of organic matter on interaction of CeO2 nanoparticles with plants in hydroponic culture.

PubMed

Schwabe, Franziska; Schulin, Rainer; Limbach, Ludwig K; Stark, Wendelin; Bürge, Diane; Nowack, Bernd

2013-04-01

An important aspect in risk assessment of nanoparticles (NPs) is to understand their environmental interactions. We used hydroponic plant cultures to study nanoparticle-plant-root interaction and translocation and exposed wheat and pumpkin to suspensions of uncoated CeO2-NP for 8d (primary particle size 17-100 nm, 100 mg L(-1)) in the absence and presence of fulvic acid (FA) and gum arabic (GA) as representatives of different types of natural organic matter. The behavior of CeO2-NPs in the hydroponic solution was monitored regarding agglomeration, sedimentation, particle size distribution, surface charge, amounts of root association, and translocation into shoots. NP-dispersions were stable over 8d in the presence of FA or GA, but with growing plants, changes in pH, particle agglomeration rate, and hydrodynamic diameter were observed. None of the plants exhibited reduced growth or any toxic response during the experiment. We found that CeO2-NPs translocated into pumpkin shoots, whereas this did not occur in wheat plants. The presence of FA and GA affected the amount of CeO2 associated with roots (pure>FA>GA) but did not affect the translocation factor. Additionally, we could confirm via TEM and SEM that CeO2-NPs adhered strongly to root surfaces of both plant species. Copyright © 2013 Elsevier Ltd. All rights reserved.

Improving the Efficiency of DASC by Adding CeO2/CuO Hybrid Nanoparticles in Water

NASA Astrophysics Data System (ADS)

Midhun Mohan, V.; Sajeeb, A. M.

Solar energy is the abundantly available source of renewable energy with least impact on environment. Direct absorption solar collector (DASC) is the commonly used device to absorb heat directly from sun and make use of it for different heating applications. In the past, many experiments have been done to increase the efficiency of DASC using nanofluids. In this paper, an examination of solar collector efficiency for hybrid CeO2/CuO-water (0.1% by volume) nanofluid under various flow rates and proportions of CeO2/CuO nanoparticles is investigated. The experiments were conducted at flow rates spanning from 20cc/min to 100cc/min and with CeO2/CuO nanoparticles proportions of 1:0, 1:0.5, 1:1, 0.5:1 and 0:1. The efficiency increases from 16.5% to 51.6% when the flow rate is increased from 20cc/min to 100cc/min for hybrid CeO2/CuO (1:1)-water nanofluid. The results also showed an increase in efficiency of 13.8%, 18.1%, 24.3%, 24.9% and 26.1% with hybrid combination of CeO2/CuO at ratios 1:0, 1:0.5, 1:1, 0.5:1 and 0:1, respectively, in comparison with water at a flow rate of 100cc/min.

In situ DRIFTS investigation of NH3-SCR reaction over CeO2/zirconium phosphate catalyst

NASA Astrophysics Data System (ADS)

Zhang, Qiulin; Fan, Jie; Ning, Ping; Song, Zhongxian; Liu, Xin; Wang, Lanying; Wang, Jing; Wang, Huimin; Long, Kaixian

2018-03-01

A series of ceria modified zirconium phosphate catalysts were synthesized for selective catalytic reduction of NO with ammonia (NH3-SCR). Over 98% NOx conversion and 98% N2 selectivity were obtained by the CeO2/ZrP catalyst with 20 wt.% CeO2 loading at 250-425 °C. The interaction between CeO2 and zirconium phosphate enhanced the redox abilities and surface acidities of the catalysts, resulting in the improvement of NH3-SCR activity. The in situ DRIFTS results indicated that the NH3-SCR reaction over the catalysts followed both Eley-Rideal and Langmuir-Hinshelwood mechanisms. The amide (sbnd NH2) groups and the NH4+ bonded to Brønsted acid sites were the important intermediates of Eley-Rideal mechanism.

Large-roll growth of 25-inch hexagonal BN monolayer film for self-release buffer layer of free-standing GaN wafer

NASA Astrophysics Data System (ADS)

Wu, Chenping; Soomro, Abdul Majid; Sun, Feipeng; Wang, Huachun; Huang, Youyang; Wu, Jiejun; Liu, Chuan; Yang, Xiaodong; Gao, Na; Chen, Xiaohong; Kang, Junyong; Cai, Duanjun

2016-10-01

Hexagonal boron nitride (h-BN) is known as promising 2D material with a wide band-gap (~6 eV). However, the growth size of h-BN film is strongly limited by the size of reaction chamber. Here, we demonstrate the large-roll synthesis of monolayer and controllable sub-monolayer h-BN film on wound Cu foil by low pressure chemical vapor deposition (LPCVD) method. By winding the Cu foil substrate into mainspring shape supported by a multi-prong quartz fork, the reactor size limit could be overcome by extending the substrate area to a continuous 2D curl of plane inward. An extremely large-size monolayer h-BN film has been achieved over 25 inches in a 1.2” tube. The optical band gap of h-BN monolayer was determined to be 6.0 eV. The h-BN film was uniformly transferred onto 2” GaN or 4” Si wafer surfaces as a release buffer layer. By HVPE method, overgrowth of thick GaN wafer over 200 μm has been achieved free of residual strain, which could provide high quality homo-epitaxial substrate.

Vice President of Medical Affairs--moving on up to CEO?

PubMed

Tyler, J L

1999-01-01

Increasingly, physician executives are reaching the conclusion that if they choose, they may be viable candidates for CEO positions. While this opinion has merit, it must be tempered by marketplace realities. A fundamental issue for VPMAs aspiring to become CEOs is that they have little formalized training or education for CEO roles. Also, they may lack team-building skills--a critical success factor. Physician executives who seek out professional development opportunities that enhance both their interpersonal/management and "business" skills--accounting, finance, and planning--are more likely to be attractive candidates and succeed once they are in the position. Another consideration is that the CEO position usually has a precursor role--the COO. This position is the training ground for the CEO. Physician executives aspiring to be CEO will want to consider the following suggestions: (1) Make your intentions known; (2) groom your successor; (3) request a title change; (4) get your master's degree; (5) pursue professional development opportunities; (6) consider leaving the organization; and (7) talk with your family.

Anti-inflammatory and antioxidant effect of cerium dioxide nanoparticles immobilized on the surface of silica nanoparticles in rat experimental pneumonia.

PubMed

Serebrovska, Z; Swanson, R J; Portnichenko, V; Shysh, A; Pavlovich, S; Tumanovska, L; Dorovskych, A; Lysenko, V; Tertykh, V; Bolbukh, Y; Dosenko, V

2017-08-01

A massage with the potent counter-inflammatory material, cerium dioxide nanoparticles, is promising and the antioxidant properties of CeO 2 are considered the main, if not the only, mechanism of this action. Nevertheless, the elimination of ceria nano-particles from the organism is very slow and there is a strong concern for toxic effect of ceria due to its accumulation. To overcome this problem, we engineered a combined material in which cerium nanoparticles were immobilized on the surface of silica nanoparticles (CeO 2 NP), which is shown to be easily removed from an organism and could be used as carriers for nano-ceria. In our study particle size was 220±5nm, Zeta-potential -4.5mV (in water), surface charge density -17.22μC/cm 2 (at pH 7). Thirty-six male Wistar rats, 5 months old and 250-290g were divided into four groups: 1) control; 2) CeO 2 NP treatment; 3) experimental pneumonia (i/p LPS injection, 1mg/kg); and 4) experimental pneumonia treated with CeO 2 NP (4 times during the study in dosage of 0.6mg/kg with an orogastric catheter). Gas exchange and pulmonary ventilation were measured four times: 0, 1, 3 and 24h after LPS injection in both untreated and CeO 2 NP-treated animals. The mRNA of TNF-α, Il-6, and CxCL2 were determined by RT-PCR. ROS-generation in blood plasma and lung tissue homogenates were measured by means of lucigenin- and luminol-enhanced chemiluminescence. Endotoxemia in the acute phase was associated with: (1) pathological changes in lung morphology; (2) increase of ROS generation; (3) enhanced expression of CxCL2; and (4) a gradual decrease of VO 2 and V E . CeO2 NP treatment of intact animals did not make any changes in all studied parameters except for a significant augmentation of VO 2 and V E. CeO 2 NP treatment of rats with pneumonia created positive changes in diminishing lung tissue injury, decreasing ROS generation in blood and lung tissue and decreasing pro-inflammatory cytokine expression (TNF-α, Il-6 and CxCL2). Oxygen consumption in this group was increased compared to the LPS pneumonia group. In our study we have shown anti-inflammatory and antioxidant effects of CeO 2 NP. In addition, this paper is the first to report that CeO 2 NP stimulates oxygen consumption in both healthy rats, and rats with pneumonia. We propose the key in understanding the mechanisms behind the phenomena lies in the property of CeO 2 NP to scavenge ROS and the influence of this potent antioxidant on mitochondrial function. The study of biodistribution and elimination of СеО 2 NP is the purpose of our ongoing study. Copyright © 2017 Elsevier Masson SAS. All rights reserved.

High-Performance Ru1 /CeO2 Single-Atom Catalyst for CO Oxidation: A Computational Exploration.

PubMed

Li, Fengyu; Li, Lei; Liu, Xinying; Zeng, Xiao Cheng; Chen, Zhongfang

2016-10-18

By means of density functional theory computations, we examine the stability and CO oxidation activity of single Ru on CeO 2 (111), TiO 2 (110) and Al 2 O 3 (001) surfaces. The heterogeneous system Ru 1 /CeO 2 has very high stability, as indicated by the strong binding energies and high diffusion barriers of a single Ru atom on the ceria support, while the Ru atom is rather mobile on TiO 2 (110) and Al 2 O 3 (001) surfaces and tends to form clusters, excluding these systems from having a high efficiency per Ru atom. The Ru 1 /CeO 2 exhibits good catalytic activity for CO oxidation via the Langmuir-Hinshelwood mechanism, thus is a promising single-atom catalyst. © 2016 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Room temperature ferromagnetism in Fe-doped CeO2 nanoparticles.

PubMed

Maensiri, Santi; Phokha, Sumalin; Laokul, Paveena; Seraphin, Supapan

2009-11-01

RT ferromagnetism was observed in nanoparticles of Fe-doped CeO2 (i.e., Ce(0.97)Fe(0.03)O2) synthesized by a sol-gel method. The undoped and Fe-doped CeO2 were characterized by XRD, Raman spectroscopy, TEM, and VSM. The undoped samples and Ce(0.97)Fe(0.03)O2 precursor exhibit a diamagnetic behavior. The 673 K-calcined Ce(0.97)Fe(0.03)O2 sample is paramagnetic whereas 773 and 873 K-calcined Ce(0.97)Fe(0.03)O2 samples are ferromagnetism having the magnetizations of 4.65 x 10(-3) emu/g and 6.20 x 10(-3) emu/g at 10 kOe, respectively. Our results indicate that the ferromagnetic property is intrinsic to the Fe-doped CeO2 system and is not a result of any secondary magnetic phase or cluster formation.

Comparison of the effects of platinum and CeO2 on the properties of single grain, Sm-Ba-Cu-O bulk superconductors

NASA Astrophysics Data System (ADS)

Zhao, Wen; Shi, Yunhua; Radušovská, Monika; Dennis, Anthony R.; Durrell, John H.; Diko, Pavel; Cardwell, David A.

2016-12-01

SmBa2Cu3O7-δ (Sm-123) is a light-rare-earth barium-cuprate (LRE-BCO) high-temperature superconductor (HTS) with significant potential for high field industrial applications. We report the fabrication of large, single grain bulk [Sm-Ba-Cu-O (SmBCO)] superconductors containing 1 wt% CeO2 and 0.1 wt% Pt using a top-seeded melt growth process. The performance of the SmBCO bulk superconductors containing the different dopants was evaluated based on an analysis of their superconducting properties, including critical transition temperature, T c and critical current density, J c , and on sample microstructure. We find that both CeO2 and Pt dopants refine the size of Sm2BaCuO5 (Sm-211) particles trapped in the Sm-123 superconducting phase matrix, which act as effective flux pinning centres, although the addition of CeO2 results in broadly improved superconducting performance of the fully processed bulk single grain. However, 1 wt% CeO2 is significantly cheaper than 0.1 wt% Pt, which has clear economic benefits for use in medium to large scale production processes for these technologically important materials. Finally, the use of CeO2 results generally in the formation of finer Sm-211 particles and to the generation of fewer macro-cracks and Sm-211 free regions in the sample microstructure.

Selective epitaxial growth properties and strain characterization of Si1- x Ge x in SiO2 trench arrays

NASA Astrophysics Data System (ADS)

Koo, Sangmo; Jang, Hyunchul; Ko, Dae-Hong

2017-04-01

In this study, we investigated the formation of a Si1- x Ge x fin structure in SiO2 trench arrays via an ultra-high-vacuum chemical-vapor deposition (UHV-CVD) selective epitaxial growth (SEG) process. Defect generation and microstructures of Si1- x Ge x fin structures with different Ge concentrations ( x = 0.2, 0.3 and 0.45) were examined. In addition, the strain evolution of a Si1- x Ge x fin structure was analyzed by using reciprocal space mapping (RSM). An (111) facet was formed from the Si1- x Ge x epi-layer and SiO2 trench wall interface to minimize the interface and the surface energy. The Si1- x Ge x fin structures were fully relaxed along the direction perpendicular to the trenches regardless of the Ge concentration. On the other hand, the fin structures were fully or partially strained along the direction parallel to the trenches depending on the Ge concentration: fully strained Si0.8Ge0.2 and Si0.7Ge0.3, and a Si0.55Ge0.45 strain-relaxed buffer. We further confirmed that the strain on the Si1- x Ge x fin structures remained stable after oxide removal and H2/N2 post-annealing.

Synthesis, characterization and photocatalytic activity of visible-light-driven reduced graphene oxide-CeO2 nanocomposite

NASA Astrophysics Data System (ADS)

Kaur, J.; Anand, K.; Anand, K.; Thangaraj, R.; Singh, R. C.

2016-10-01

Reduced graphene oxide (RGO) and CeO2 nanocomposite fabricated by a facile hydrothermal method was studied as a photocatalyst for the degradation of methylene blue (MB) under natural sunlight. The reduction of graphene oxide and decoration of CeO2 nanocubes was accomplished simultaneously in one hydrothermal step. The structural, optical and photocatalytic properties of synthesized samples were probed by X-ray diffraction, Raman spectroscopy, field-emission scanning electron microscopy, transmission electron microscopy, X-ray photoelectron spectroscopy, UV-Vis diffuse reflectance spectra and photoluminescence spectra. RGO/CeO2 nanocomposite exhibited distinctive structural features comprising well-dispersed CeO2 nanocubes on the RGO surface without any agglomeration. RGO/CeO2 nanocomposite displayed a great MB absorptivity, significant band gap narrowing and photoluminescence quenching phenomenon concurrently, which was ascribed to unique properties of RGO sheets. The photocatalytic activity results revealed that there was a remarkable enhancement in reaction rate with RGO/CeO2 nanocomposite in comparison to its counterparts (Blank CeO2 and CNT/CeO2 nanocomposite). The degradation efficiency of RGO/CeO2, CNT/CeO2 and CeO2 was found to be 91.2, 75 and 64 % within 180 min respectively.

Synthesis and characterization of binary (CuO)0.6(CeO2)0.4 nanoparticles via a simple heat treatment method

NASA Astrophysics Data System (ADS)

Baqer, Anwar Ali; Matori, Khamirul Amin; Al-Hada, Naif Mohammed; Shaari, Abdul Halim; Kamari, Halimah Mohamed; Saion, Elias; Chyi, Josephine Liew Ying; Abdullah, Che Azurahanim Che

2018-06-01

A binary (CuO)0.6 (CeO2)0.4 nanoparticles were prepared via thermal treatment method, using copper nitrate, cerium nitrate as precursors, PVP as capping agent and de-ionized water as a solvent. The structures, morphology, composition of the element and optical properties of these nanoparticles have been studied under different temperatures using various techniques. The XRD spectrum of the samples at 500 °C and above confirmed the existence of both monoclinic (CuO) and cubic fluorite (CeO2) structures. The findings of FESEM and TEM exhibited the average practical size and agglomeration increment with an elevation in the calcination temperature. The synthesized nanoparticles were also characterized by FTIR, which indicated the formation of binary Cu-O and Ce-O bonds. The EDX analysis was performed to indicate the chemical composition of the sample. The double energy band gaps of (CuO)0.6(CeO2)0.4 reduction with rising calcination temperature, can be referred to the enhancement of the crystallinity of the samples. PL intensity of (CuO)0.6(CeO2)0.4 nanoparticles peaks, which increased with the elevation of the calcination temperature to 800 °C was observed from the PL spectrum; this was due to the increment of the particle size that occurred.

Demonstrating antiphase domain boundary-free GaAs buffer layer on zero off-cut Si (0 0 1) substrate for interfacial misfit dislocation GaSb film by metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Ha, Minh Thien Huu; Hoang Huynh, Sa; Binh Do, Huy; Nguyen, Tuan Anh; Luc, Quang Ho; Chang, Edward Yi

2017-08-01

High quality 40 nm GaSb thin film was grown on the zero off-cut Si (0 0 1)-oriented substrate using metalorganic chemical vapor deposition with the temperature-graded GaAs buffer layer. The growth time of the GaAs nucleation layer, which was deposited at a low temperature of 490 °C, is systematically investigated in this paper. Cross-sections of the high resolution transmission electron microscopy images indicate that the GaAs compound formed 3D-islands first before to quasi-2D islands, and finally formed uniform GaAs layer. The optimum thickness of the 490 °C-GaAs layer was found to be 10 nm to suppress the formation of antiphase domain boundaries (APDs). The thin GaAs nucleation layer had a root-mean-square surface roughness of 0.483 nm. This allows the continued high temperature GaAs buffer layer to be achieved with low threading dislocation density of around 7.1  ×  106 cm-2 and almost invisible APDs. Finally, a fully relaxed GaSb film was grown on the top of the GaAs/Si heterostructure using interfacial misfit dislocation growth mode. These results indicate that the GaSb epitaxial layer can be grown on Si substrate with GaAs buffer layer for future p-channel metal-oxide-semiconductor field effect transistors (MOSFETs) applications.

Corrosion protection properties and interfacial adhesion mechanism of an epoxy/polyamide coating applied on the steel surface decorated with cerium oxide nanofilm: Complementary experimental, molecular dynamics (MD) and first principle quantum mechanics (QM) simulation methods

NASA Astrophysics Data System (ADS)

Bahlakeh, Ghasem; Ramezanzadeh, Bahram; Saeb, Mohammad Reza; Terryn, Herman; Ghaffari, Mehdi

2017-10-01

The effect of cerium oxide treatment on the corrosion protection properties and interfacial interaction of steel/epoxy was studied by electrochemical impedance spectroscopy, (EIS) classical molecular dynamics (MD) and first principle quantum mechanics (QM) simulation methods X-ray photoelectron spectroscopy (XPS) was used to verify the chemical composition of the Ce film deposited on the steel. To probe the role of the curing agent in epoxy adsorption, computations were compared for an epoxy, aminoamide and aminoamide modified epoxy. Moreover, to study the influence of water on interfacial interactions the MD simulations were executed for poly (aminoamide)-cured epoxy resin in contact with the different crystallographic cerium dioxide (ceria, CeO2) surfaces including (100), (110), and (111) in the presence of water molecules. It was found that aminoamide-cured epoxy material was strongly adhered to all types of CeO2 substrates, so that binding to ceria surfaces followed the decreasing order CeO2 (111) > CeO2 (100) > CeO2 (110) in both dry and wet environments. Calculation of interaction energies noticed an enhanced adhesion to metal surface due to aminoamide curing of epoxy resin; where facets (100) and (111) revealed electrostatic and Lewis acid-base interactions, while an additional hydrogen bonding interaction was identified for CeO2 (110). Overall, MD simulations suggested decrement of adhesion to CeO2 in wet environment compared to dry conditions. Additionally, contact angle, pull-off test, cathodic delamination and salt spray analyses were used to confirm the simulation results. The experimental results in line with modeling results revealed that Ce layer deposited on steel enhanced substrate surface free energy, work of adhesion, and interfacial adhesion strength of the epoxy coating. Furthermore, decrement of adhesion of epoxy to CeO2 in presence of water was affirmed by experimental results. EIS results revealed remarkable enhancement of the corrosion resistance of epoxy coating applied on the steel specimens treated by cerium oxide.

Design concepts of monolithic metamorphic vertical-cavity surface-emitting lasers for the 1300–1550 nm spectral range

DOE Office of Scientific and Technical Information (OSTI.GOV)

Egorov, A. Yu., E-mail: anton@beam.ioffe.ru; Karachinsky, L. Ya.; Novikov, I. I.

Possible design concepts for long-wavelength vertical-cavity surface-emitting lasers for the 1300–1550 nm spectral range on GaAs substrates are suggested. It is shown that a metamorphic GaAs–InGaAs heterostructure with a thin buffer layer providing rapid transition from the lattice constant of GaAs to that of In{sub x}Ga{sub 1–x}As with an indium fraction of x < 0.3 can be formed by molecular-beam epitaxy. Analysis by transmission electron microscopy demonstrated the effective localization of mismatch dislocations in the thin buffer layer and full suppression of their penetration into the overlying InGaAs metamorphic layer.

Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si(111) using ammonia-molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ravikiran, L.; Radhakrishnan, K., E-mail: ERADHA@ntu.edu.sg; Yiding, Lin

2015-01-14

To improve the confinement of two-dimensional electron gas (2DEG) in AlGaN/GaN high electron mobility transistor (HEMT) heterostructures, AlGaN/GaN/AlGaN double heterojunction HEMT (DH-HEMT) heterostructures were grown using ammonia-MBE on 100-mm Si substrate. Prior to the growth, single heterojunction HEMT (SH-HEMT) and DH-HEMT heterostructures were simulated using Poisson-Schrödinger equations. From simulations, an AlGaN buffer with “Al” mole fraction of 10% in the DH-HEMT was identified to result in both higher 2DEG concentration (∼10{sup 13 }cm{sup −2}) and improved 2DEG confinement in the channel. Hence, this composition was considered for the growth of the buffer in the DH-HEMT heterostructure. Hall measurements showed a roommore » temperature 2DEG mobility of 1510 cm{sup 2}/V.s and a sheet carrier concentration (n{sub s}) of 0.97 × 10{sup 13 }cm{sup −2} for the DH-HEMT structure, while they are 1310 cm{sup 2}/V.s and 1.09 × 10{sup 13 }cm{sup −2}, respectively, for the SH-HEMT. Capacitance-voltage measurements confirmed the improvement in the confinement of 2DEG in the DH-HEMT heterostructure, which helped in the enhancement of its room temperature mobility. DH-HEMT showed 3 times higher buffer break-down voltage compared to SH-HEMT, while both devices showed almost similar drain current density. Small signal RF measurements on the DH-HEMT showed a unity current-gain cut-off frequency (f{sub T}) and maximum oscillation frequency (f{sub max}) of 22 and 25 GHz, respectively. Thus, overall, DH-HEMT heterostructure was found to be advantageous due to its higher buffer break-down voltages compared to SH-HEMT heterostructure.« less

Controlling Heteroepitaxy by Oxygen Chemical Potential: Exclusive Growth of (100) Oriented Ceria Nanostructures on Cu(111)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Höcker, Jan; Duchoň, Tomáš; Veltruská, Kateřina

2016-01-06

We present a novel and simple method for the preparation of a well-defined CeO 2(100) model system on Cu(111) based on the adjustment of the Ce/O ratio during growth. The method yields micrometer-sized, several nanometers high, single-phase CeO 2(100) islands with controllable size and surface termination that can be benchmarked against the known (111) nanostructured islands on Cu(111). We also demonstrate the ability to adjust the Ce to O stoichiometry from CeO 2(100) (100% Ce 4+) to c-Ce 2O 3(100) (100% Ce 3+), which can be readily recognized by characteristic surface reconstructions observed by low-energy electron diffraction. Finally, the discoverymore » of the highly stable CeO x(100) phase on a hexagonally close packed metal surface represents an unexpected growth mechanism of ceria on Cu(111), and it provides novel opportunities to prepare more elaborate models, benchmark surface chemical reactivity, and thus gain valuable insights into the redox chemistry of ceria in catalytic processes.« less

Stabilizing Ir(001) Epitaxy on Yttria-Stabilized Zirconia Using a Thin Ir Seed Layer Grown by Pulsed Laser Deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fan, Lisha; Jacobs, Christopher B.; Rouleau, Christopher M.

In this paper, we demonstrate the reproducible epitaxial growth of 100 nm thick Ir(001) films on a heteroepitaxial stack consisting of 5 nm Ir and 100 nm yttria-stabilized zirconia (YSZ) grown on Si(001) substrates. It is shown that a 5 nm thick Ir layer grown by pulsed laser deposition in the same chamber as the YSZ film without breaking the vacuum is the key to stabilizing Ir(001) epitaxial growth. Growth of the Ir seed layer with pure (001) orientation occurs only in a narrow growth temperature window from 550 to 750 °C, and the fraction of Ir(111) increases at substratemore » temperatures outside of this window. The Ir seed layer prevents exposure of the YSZ film to air during sample transfer and enables highly reproducible Ir(001) heteroepitaxy on YSZ buffered Si(001). In contrast, if Ir is grown directly on a bare YSZ layer that was exposed to ambient conditions, the films are prone to change orientation to (111). These results reveal that preserving the chemical and structural purity of the YSZ surface is imperative for achieving Ir(001) epitaxy. The narrow range of the mosaic spread values from eight experiments demonstrates the high yield and high reproducibility of Ir(001) heteroepitaxy by this approach. Lastly, the improved Ir(001) epitaxial growth method is of great significance for integrating a variety of technologically important materials such as diamond, graphene, and functional oxides on a Si platform.« less

Stabilizing Ir(001) Epitaxy on Yttria-Stabilized Zirconia Using a Thin Ir Seed Layer Grown by Pulsed Laser Deposition

DOE PAGES

Fan, Lisha; Jacobs, Christopher B.; Rouleau, Christopher M.; ...

2016-11-18

In this paper, we demonstrate the reproducible epitaxial growth of 100 nm thick Ir(001) films on a heteroepitaxial stack consisting of 5 nm Ir and 100 nm yttria-stabilized zirconia (YSZ) grown on Si(001) substrates. It is shown that a 5 nm thick Ir layer grown by pulsed laser deposition in the same chamber as the YSZ film without breaking the vacuum is the key to stabilizing Ir(001) epitaxial growth. Growth of the Ir seed layer with pure (001) orientation occurs only in a narrow growth temperature window from 550 to 750 °C, and the fraction of Ir(111) increases at substratemore » temperatures outside of this window. The Ir seed layer prevents exposure of the YSZ film to air during sample transfer and enables highly reproducible Ir(001) heteroepitaxy on YSZ buffered Si(001). In contrast, if Ir is grown directly on a bare YSZ layer that was exposed to ambient conditions, the films are prone to change orientation to (111). These results reveal that preserving the chemical and structural purity of the YSZ surface is imperative for achieving Ir(001) epitaxy. The narrow range of the mosaic spread values from eight experiments demonstrates the high yield and high reproducibility of Ir(001) heteroepitaxy by this approach. Lastly, the improved Ir(001) epitaxial growth method is of great significance for integrating a variety of technologically important materials such as diamond, graphene, and functional oxides on a Si platform.« less

Hydrophilic CeO2 nanocubes protect pancreatic β-cell line INS-1 from H2O2-induced oxidative stress

NASA Astrophysics Data System (ADS)

Lyu, Guang-Ming; Wang, Yan-Jie; Huang, Xue; Zhang, Huai-Yuan; Sun, Ling-Dong; Liu, Yan-Jun; Yan, Chun-Hua

2016-04-01

Oxidative stress plays a key role in the occurrence and development of diabetes. With their unique redox properties, CeO2 nanoparticles (nanoceria) exhibit promising potential for the treatment of diabetes resulting from oxidative stress. Here, we develop a novel preparation of hydrophilic CeO2 nanocubes (NCs) with two different sizes (5 nm and 25 nm) via an acetate assisted hydrothermal method. Dynamic light scattering, zeta potential measurements and thermogravimetric analyses were utilized to investigate the changes in the physico-chemical characteristics of CeO2 NCs when exposed to in vitro cell culture conditions. CCK-8 assays revealed that the CeO2 NCs did not impair cell proliferation in the pancreatic β-cell line INS-1 at the highest dose of 200 μg mL-1 over the time scale of 72 h, while being able to protect INS-1 cells from H2O2-induced cytotoxicity even after protein adsorption. It is also noteworthy that nanoceria with a smaller hydrodynamic radius exhibit stronger antioxidant and anti-apoptotic effects, which is consistent with their H2O2 quenching capability in biological systems. These findings suggest that nanoceria can be used as an excellent antioxidant for controlling oxidative stress-induced pancreatic β-cell damage.Oxidative stress plays a key role in the occurrence and development of diabetes. With their unique redox properties, CeO2 nanoparticles (nanoceria) exhibit promising potential for the treatment of diabetes resulting from oxidative stress. Here, we develop a novel preparation of hydrophilic CeO2 nanocubes (NCs) with two different sizes (5 nm and 25 nm) via an acetate assisted hydrothermal method. Dynamic light scattering, zeta potential measurements and thermogravimetric analyses were utilized to investigate the changes in the physico-chemical characteristics of CeO2 NCs when exposed to in vitro cell culture conditions. CCK-8 assays revealed that the CeO2 NCs did not impair cell proliferation in the pancreatic β-cell line INS-1 at the highest dose of 200 μg mL-1 over the time scale of 72 h, while being able to protect INS-1 cells from H2O2-induced cytotoxicity even after protein adsorption. It is also noteworthy that nanoceria with a smaller hydrodynamic radius exhibit stronger antioxidant and anti-apoptotic effects, which is consistent with their H2O2 quenching capability in biological systems. These findings suggest that nanoceria can be used as an excellent antioxidant for controlling oxidative stress-induced pancreatic β-cell damage. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr00826g

High thermal stability of La 2O 3 and CeO 2-stabilized tetragonal ZrO 2

DOE PAGES

Wang, Shichao; Xie, Hong; Lin, Yuyuan; ...

2016-02-15

Catalyst support materials of tetragonal ZrO 2, stabilized by either La 2O 3 (La 2O 3-ZrO 2) or CeO 2 (CeO 2-ZrO 2), were synthesized under hydrothermal conditions at 200 °C with NH 4OH or tetramethylammonium hydroxide as the mineralizer. From In Situ synchrotron powder X-ray diffraction and small-angle X-ray scattering measurements, the calcined La 2O 3-ZrO 2 and CeO 2-ZrO 2 supports were nonporous nanocrystallites that exhibited rectangular shapes with thermal stability up to 1000 °C in air. These supports had an average size of ~10 nm and a surface area of 59-97 m 2/g. The catalysts Pt/La 2Omore » 3-ZrO 2 and Pt/CeO 2-ZrO 2 were prepared by using atomic layer deposition with varying Pt loadings from 6.3-12.4 wt %. Mono-dispersed Pt nanoparticles of ~3 nm were obtained for these catalysts. As a result, the incorporation of La 2O 3 and CeO 2 into the t-ZrO 2 structure did not affect the nature of the active sites for the Pt/ZrO 2 catalysts for the water-gas-shift (WGS) reaction.« less

Role of CeO2 promoter in NiO/α-Al2O3 catalyst for dry reforming of methane

NASA Astrophysics Data System (ADS)

Loc, Luu Cam; Phuong, Phan Hong; Tri, Nguyen

2017-09-01

A series of Ni/α-Al2O3 (NiAl) catalysts promoted by CeO2 was prepared by co-impregnation methods with content of (NiO+CeO2) being in the range of 10-30 wt%. The NiO:CeO2 weight ratio was fluctuated at 1:1, 1:2 and 1:3. Several techniques, including X-ray powder diffraction (XRD), Hydrogen temperature-programmed reduction (H2-TPR), and transmission electron microscopy (TEM) were used to investigate catalysts' physico-chemical properties. The activity of these catalysts in dry reforming of CH4 was investigated at temperature range of 550-800 °C. The results revealed that the most suitable CeO2 promoted Ni catalyst contained 20 wt% of (NiO+CeO2) and NiO:CeO2 weight ratio of 1:2. The best catalytic performance of catalyst [20(1Ni2Ce)Al] due to a better reducibility resulted in a higher amount of free small particle NiO. At 700 °C and CH4:CO2 molar ratio of 1:1, the conversion of CH4 and CO2 on the most suitable CeO2 promoted Ni catalyst reached 86% and 67%, respectively; H2 and CO selectivity of 90% and H2:CO molar ratio of 1.15 were obtained. Being similar to MgO [1], promoter CeO2 could improve catalytic activity of Ni/α-Al2O3 catalyst at a lower range of temperature. Besides, both MgO and CeO2 had a great impact on improving coke resistance of Ni catalysts. At higher temperature, the role of CeO2 as well as MgO in preventing coke formation on catalyst was clarified by temperature-programmed oxidation (TPO) technique. Coke amount formed after 30-h TOS on 20(1Ni2Ce) catalyst was found to be 22.18 mgC/gcat, being less than on non-promoted catalyst (36.75 mgC/gcat), but more than on 20(1Ni2Mg)Al one (5.25 mgC/gcat).

Effects of substrate orientation on the growth of InSb nanostructures by molecular beam epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chou, C. Y.; Torfi, A.; Pei, C.

2016-05-09

In this work, the effects of substrate orientation on InSb quantum structure growth by molecular beam epitaxy (MBE) are presented. Motivated by the observation that (411) evolves naturally as a stable facet during MBE crystal growth, comparison studies have been carried out to investigate the effects of the crystal orientation of the underlying GaSb substrate on the growth of InSb by MBE. By depositing InSb on a number of different substrate orientations, namely: (100), (311), (411), and (511), a higher nanostructure density was observed on the (411) surface compared with the other orientations. This result suggests that the (411) orientationmore » presents a superior surface in MBE growth to develop a super-flat GaSb buffer surface, naturally favorable for nanostructure growth.« less

Novel Biomedical Devices Utilizing Light-Emitting Nanostructures

NASA Technical Reports Server (NTRS)

Goldman, Rachel S.

2004-01-01

As part of the NASA project, we are investigating the formation, properties, and performance of QD heterostructures, to be incorporated into a novel biomedical device for detecting bacteria and/or viruses in fluids on board space vehicles. We are presently synthesizing the epitaxial quantum dot structures using molecular beam epitaxy. We recently developed a method for controlling the arrangement of QDs, based upon a combination of buffer layer growth and controlled annealing sequences. This method is promising for producing arrangements of QDs with a locally well-controlled distribution of sizes. In the future, we plan to explore selective pre-patterning of the starting surface using focused ion-beam nanopatterning, which will enable us to precisely tune the compositions, sizes, and placement of the QDs, in order laterally tune the emission and detection wavelengths of QD based devices.

Epitaxy of Fe/Cu/Si(1 1 1) ultrathin films: an Auger electron diffraction study

NASA Astrophysics Data System (ADS)

Castrucci, P.; Gunnella, R.; Bernardini, R.; Montecchiari, A.; Carboni, R.; De Crescenzi, M.

2001-06-01

Epitaxial Fe films, with thickness in the range between 1 and 50 ML (monolayer, ML), were grown in ultrahigh vacuum conditions on the 7×7 reconstructed (1 1 1)-Si surface. The films were evaporated on a Cu thick buffer layer to avoid iron silicides formation. Auger electron diffraction (AED) technique has been used to investigate the growth of the pseudomorphic film of fcc γ-Fe(1 1 1) and the successive growth of bcc Fe(1 1 0) domains in the Kurdjumov-Sachs orientation. The early stages of growth have been carefully investigated through AED to assess the pseudomorphism of iron γ-phase. AED patterns clearly show the presence of diffraction features that are fingerprints of the existence of a few bcc arranged atomic structures even for 1 ML iron coverage.

Radiation damage of gallium arsenide production cells

NASA Technical Reports Server (NTRS)

Mardesich, N.; Garlick, G. F. J.

1987-01-01

High-efficiency gallium arsenide cells, made by the liquid epitaxy method (LPE), have been irradiated with 1-MeV electrons up to fluences of 10 to the 16th e/sq cm. Measurements have been made of cell spectral response and dark and light-excited current-voltage characteristics and analyzed using computer-based models to determine underlying parameters such as damage coefficients. It is possible to use spectral response to sort out damage effects in the different cell component layers. Damage coefficients are similar to other reported in the literature for the emitter and buffer (base). However, there is also a damage effect in the window layer and possibly at the window emitter interface similar to that found for proton-irradiated liquid-phase epitaxy-grown cells. Depletion layer recombination is found to be less than theoretically expected at high fluence.

Ceo2 Based Catalysts for the Treatment of Propylene in Motorcycle’s Exhaust Gases

PubMed Central

Pham, Phuong Thi Mai; Le Minh, Thang; Nguyen, Tien The; Van Driessche, Isabel

2014-01-01

In this work, the catalytic activities of several single metallic oxides were studied for the treatment of propylene, a component in motorcycles’ exhaust gases, under oxygen deficient conditions. Amongst them, CeO2 is one of the materials that exhibit the highest activity for the oxidation of C3H6. Therefore, several mixtures of CeO2 with other oxides (SnO2, ZrO2, Co3O4) were tested to investigate the changes in catalytic activity (both propylene conversion and CO2 selectivity). Ce0.9Zr0.1O2, Ce0.8Zr0.2O2 solid solutions and the mixtures of CeO2 and Co3O4 was shown to exhibit the highest propylene conversion and CO2 selectivity. They also exhibited good activities when tested under oxygen sufficient and excess conditions and with the presence of co-existing gases (CO, H2O). PMID:28788253

Fabrication of mesoporous cerium dioxide films by cathodic electrodeposition.

PubMed

Kim, Young-Soo; Lee, Jin-Kyu; Ahn, Jae-Hoon; Park, Eun-Kyung; Kim, Gil-Pyo; Baeck, Sung-Hyeon

2007-11-01

Mesoporous cerium dioxide (Ceria, CeO2) thin films have been successfully electrodeposited onto ITO-coated glass substrates from an aqueous solution of cerium nitrate using CTAB (Cetyltrimethylammonium Bromide) as a templating agent. The synthesized films underwent detailed characterizations. The crystallinity of synthesized CeO2 film was confirmed by XRD analysis and HR-TEM analysis, and surface morphology was investigated by SEM analysis. The presence of mesoporosity in fabricated films was confirmed by TEM and small angle X-ray analysis. As-synthesized film was observed from XRD analysis and HR-TEM image to have well-crystallized structure of cubic phase CeO2. Transmission electron microscopy and small angle X-ray analysis revealed the presence of uniform mesoporosity with a well-ordered lamellar phase in the CeO2 films electrodeposited with CTAB templating.

Committee on Earth Observation Satellites (CEOS) perspectives about the GEO Supersite initiative

NASA Astrophysics Data System (ADS)

Lengert, Wolfgang; Zoffoli, Simona; Giguere, Christine; Hoffmann, Joern; Lindsay, Francis; Seguin, Guy

2014-05-01

This presentation is outlining the effort of the Committee on Earth Observation Satellites (CEOS) using its global collaboration structure to support implementing the GEO priority action DI-01 Informing Risk Management and Disaster Reduction addressing the component: C2 Geohazards Monitoring, Alert, and Risk Assessment. A CEOS Supersites Coordination Team (SCT) has been established in order to make best use of the CEOS global satellite resources. For this, the CEOS SCT has taken a holistic view on the science data needs and availability of resources, considering the constraints and exploitation potentials of synergies. It is interfacing with the Supersites Science Advisory Group and the Principle Investigators to analyze how the satellite data associated with seismic and Global Navigation Satellite System (GNSS) data can support national authorities and policy makers in risk assessment and the development of mitigation strategies. CEOS SCT aims to support the establishment of a fully integrated approach to geohazards monitoring, based on collaboration among existing networks and international initiatives, using new instrumentation such as in-situ sensors, and aggregating space (radar, optical imagery) and ground-based (subsurface) observations. The three Supersites projects which are funded under the EC FP7 action, namely (i) FUTUREVOLC: A European volcanological supersite in Iceland: a monitoring system and network for the future Geohazards Monitoring, Alert, and Risk Assessment, (ii) MARsite: New Directions in Seismic Hazard assessment through Focused Earth Observation in the Marmara Supersite, (iii) MED-SUV: MEDiterranean Volcanoes and related seismic risks, have been examined as a vehicle to fulfill these ambitious objectives. FUTUREVOLC has already been granted CEOS support. This presentation will outline CEOS agreed process and criteria applied by the Supersites Coordination Team (SCT), for selecting these Supersites in the context of the GSNL initiative, as well provide information about the satellite data provided by CEOS for the different Supersites. ASI - COSMO-Skymed CNES - SPOT-5, Pleiades CSA - Radarsat-2 DLR - TerraSAR-X, TanDEM-X ESA - ERS-1/2, Envisat, Sentinel (on behalf of EC - Copernicus) JAXA - ALOS-2, ALOS-1, J-ERS NASA - ASTER

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guseynov, R. R.; Tanriverdiyev, V. A.; Kipshidze, G., E-mail: gela.kishidze@stonybrook.ede

Unrelaxed InAs{sub 1–x}Sb{sub x} (x = 0.43 and 0.38) alloy layers are produced by molecular-beam epitaxy on compositionally graded GaInSb and AlGaInSb buffer layers. The high quality of the thin films produced is confirmed by the results of high-resolution X-ray diffraction analysis and micro-Raman studies. The twomode type of transformation of the phonon spectra of InAs{sub 1–x}Sb{sub x} alloys is established.

Nanocrystalline Ce1- x La x O2- δ Solid Solutions Synthesized by Hydrolyzing and Oxidizing

NASA Astrophysics Data System (ADS)

Hou, Xueling; Xue, Yun; Han, Ning; Lu, Qianqian; Wang, Xiaochen; Phan, Manh-Huong; Zhong, Yunbo

2016-05-01

We undertook a novel batch production approach for the synthesis of CeO2 nanopowders doped with rare earth elements. Solid solution nanopowders of Ce1- x La x O2- δ ( x = 0.15) were successfully synthesized in a large-scale and low-cost production by hydrolyzing and oxidizing Ce-La-C alloys at room temperature and subsequent calcining of their powders at different temperatures (873-1073 K) for 1 h. The Ce-La-C alloys were prepared in a vacuum induction melting furnace. The final products were characterized by x-ray diffraction, transmission electron microscopy, Brunner-Emmet-Teller (BET) surface area analyzer, and Raman spectroscopy. The calculated lattice parameters of the cubic fluorite-type phase of CeO2 tended to increase when La3+ was incorporated into CeO2. The F 2g band shift and the absence of a peak corresponding to La2O3 in the Raman spectra consistently confirmed the incorporation of the La3+ ion into CeO2, and the formation of Ce1- x La x O2- δ solid solutions as manifested by increased oxygen vacancy defects. High-quality Ce1- x La x O2- δ nanopowders of ~10-15 nm diameter with a high BET surface area of ~77 m2 g-1 were obtained. The average crystallite size of Ce1- x La x O2- δ was found to be smaller than that of CeO2 for the same calcination temperature of 1073 K, demonstrating that the introduction of La3+ into CeO2 can stabilize the host lattice and refine the grain size at high temperatures.

Facile synthesis of ferromagnetic Ni doped CeO2 nanoparticles with enhanced anticancer activity

NASA Astrophysics Data System (ADS)

Abbas, Fazal; Jan, Tariq; Iqbal, Javed; Ahmad, Ishaq; Naqvi, M. Sajjad H.; Malik, Maaza

2015-12-01

NixCe1-xO2 (where x = 0, 0.01, 0.03, 0.05 and 0.07) nanoparticles were synthesized by soft chemical method and were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman, UV-vis absorption spectroscopy and vibrating sample magnetometer (VSM). XRD and Raman results indicated the formation of single phase cubic fluorite structure for the synthesized nanoparticles. Ni dopant induced excessive structural changes such as decrease in crystallite size as well as lattice constants and enhancement in oxygen vacancies in CeO2 crystal structure. These structural variations significantly influenced the optical and magnetic properties of CeO2 nanoparticles. The synthesized NixCe1-xO2 nanoparticles exhibited room temperature ferromagnetic behavior. Ni doping induced effects on the cytotoxicity of CeO2 nanoparticles were examined against HEK-293 healthy cell line and SH-SY5Y neuroblastoma cancer cell line. The prepared NixCe1-xO2 nanoparticles demonstrated differential cytotoxicity. Furthermore, anticancer activity of CeO2 nanoparticles observed to be significantly enhanced with Ni doping which was found to be strongly correlated with the level of reactive oxygen species (ROS) production. The prepared ferromagnetic NixCe1-xO2 nanoparticles with differential cytotoxic nature may be potential for future targeted cancer therapy.

Dose-Dependent Effects of CeO2 on Microstructure and Antibacterial Property of Plasma-Sprayed TiO2 Coatings for Orthopedic Application

NASA Astrophysics Data System (ADS)

Zhao, Xiaobing; Liu, Gaopeng; Zheng, Hai; Cao, Huiliang; Liu, Xuanyong

2015-02-01

Titanium and its alloys have been used extensively for orthopedic and dental implants. Although these devices have achieved high rates of success, two major complications may be encountered: the lack of osseointegration and the biomaterial-related infection. Accordingly, cerium oxide (CeO2)-doped titanium oxide (TiO2) materials were coated on titanium by an atmospheric plasma spraying (APS) technique. The phase structures, morphologies, and surface chemical states of the obtained coatings were characterized by x-ray diffraction, scanning electron microscopy, and x-ray photoelectron spectroscopy techniques. The in vitro antibacterial and cytocompatibility of the materials were studied with Staphylococcus aureus ( S. aureus, ATCC25923) and osteoblast precursor cell line MC3T3-E1. The results indicated that the addition of CeO2 shifts slightly the diffraction peaks of TiO2 matrix to low angles but does not change its rutile phase structure. In addition, the CeO2/TiO2 composite coatings possess dose-dependent corrosion resistance and antimicrobial properties. And doping of 10 wt.% CeO2 exhibits the highest activity against S. aureus, improved corrosion resistance, and competitive cytocompatibility, which argues a promising option for balancing the osteogenetic and antibacterial properties of titanium implants.

a Study of Nanocomposite Coatings on the Surface of Ship Exhaust Pipe

NASA Astrophysics Data System (ADS)

Shen, Yan; Sahoo, Prasanta K.; Pan, Yipeng

In order to improve the high temperature oxidation resistance of exhaust pipes, the nanocomposite coatings are carried out on the surface of exhaust pipe by pulsed current electrodeposition technology, and the microstructure and oxidation behavior of the nanocomposite coatings are investigated experimentally. This paper mainly focuses on the experimental work to determine the structural characteristics and oxidation resistance of nanocomposite coatings in presence of attapulgite and cerium oxide CeO2. The results show that the amount of the attapulgite-CeO2 has significant influence on the structural properties of nanocomposite coatings. The surface of coating becomes more compact and smooth with the increase of the amount of the attapulgite and CeO2. Furthermore, the anti-oxidation performances of the nanocomposite coatings formed with attapulgite and CeO2 were both better than those of the composite coatings formed without attapulgite and CeO2.

Hydrogenation of CO 2 to methanol on CeO x/Cu(111) and ZnO/Cu(111) catalysts: Role of the metal-oxide interface and importance of Ce 3+ sites

DOE PAGES

Senanayake, Sanjaya D.; Ramirez, Pedro J.; Waluyo, Iradwikanari; ...

2016-01-06

The role of the interface between a metal and oxide (CeO x–Cu and ZnO–Cu) is critical to the production of methanol through the hydrogenation of CO 2 (CO 2 + 3H 2 → CH 3OH + H 2O). The deposition of nanoparticles of CeO x or ZnO on Cu(111), θ oxi < 0.3 monolayer, produces highly active catalysts for methanol synthesis. The catalytic activity of these systems increases in the sequence: Cu(111) < ZnO/Cu(111) < CeO x/Cu(111). The apparent activation energy for the CO 2 → CH 3OH conversion decreases from 25 kcal/mol on Cu(111) to 16 kcal/mol on ZnO/Cu(111)more » and 13 kcal/mol on CeO x/Cu(111). The surface chemistry of the highly active CeO x–Cu(111) interface was investigated using ambient pressure X-ray photoemission spectroscopy (AP-XPS) and infrared reflection absorption spectroscopy (AP-IRRAS). Both techniques point to the formation of formates (HCOO –) and carboxylates (CO 2 δ–) during the reaction. Our results show an active state of the catalyst rich in Ce 3+ sites which stabilize a CO 2 δ– species that is an essential intermediate for the production of methanol. Furthermore, the inverse oxide/metal configuration favors strong metal–oxide interactions and makes possible reaction channels not seen in conventional metal/oxide catalysts.« less

Cerium dioxide (CeO2) nanoparticles decrease arsenite (As(III)) cytotoxicity to 16HBE14o- human bronchial epithelial cells.

PubMed

Zeng, Chao; Nguyen, Chi; Boitano, Scott; Field, Jim A; Shadman, Farhang; Sierra-Alvarez, Reyes

2018-07-01

The production and application of engineered nanoparticles (NPs) are increasing in demand with the rapid development of nanotechnology. However, there are concerns that some of these novel materials could lead to emerging environmental and health problems. Some NPs are able to facilitate the transport of contaminants into cells/organisms via a "Trojan Horse" effect which enhances the toxicity of the adsorbed materials. In this work, we evaluated the toxicity of arsenite (As(III)) adsorbed onto cerium dioxide (CeO 2 ) NPs to human bronchial epithelial cells (16HBE14o-) using the xCELLigence real time cell analyzing system (RTCA). Application of 0.5 mg/L As(III) resulted in 81.3% reduction of cell index (CI, an RTCA measure of cell toxicity) over 48 h when compared to control cells exposed to medium lacking As(III). However, when the cells were exposed to 0.5 mg/L As(III) in the presence of CeO 2 NPs (250 mg/L), the CI was only reduced by 12.9% compared to the control. The CeO 2 NPs had a high capacity for As(III) adsorption (20.2 mg/g CeO 2 ) in the bioassay medium, effectively reducing dissolved As(III) in the aqueous solution and resulting in reduced toxicity. Transmission electron microscopy was used to study the transport of CeO 2 NPs into 16HBE14o- cells. NP uptake via engulfment was observed and the internalized NPs accumulated in vesicles. The results demonstrate that dissolved As(III) in the aqueous solution was the decisive factor controlling As(III) toxicity of 16HBE14o- cells, and that CeO 2 NPs effectively reduced available As(III) through adsorption. These data emphasize the evaluation of mixtures when assaying toxicity. Copyright © 2018 Elsevier Inc. All rights reserved.

Evidence of the differential biotransformation and genotoxicity of ZnO and CeO2 nanoparticles on soybean (Glycine max) plants.

PubMed

López-Moreno, Martha L; de la Rosa, Guadalupe; Hernández-Viezcas, José A; Castillo-Michel, Hiram; Botez, Cristian E; Peralta-Videa, José R; Gardea-Torresdey, Jorge L

2010-10-01

Concern and interest related to the effects of nanomaterials on living organisms are growing in both the scientific and public communities. Reports have described the toxicity of nanoparticles (NPs) on micro- and macro-organisms, including some plant species. Nevertheless, to the authors' knowledge there are no reports on the biotransformation of NPs by edible terrestrial plants. Here, shown for the first time, is evidence pertaining to the biotransformation of ZnO and CeO(2) NPs in plant seedlings. Although the NPs did not affect soybean germination, they produced a differential effect on plant growth and element uptake. By using synchrotron X-ray absorption spectroscopy we obtained clear evidence of the presence of CeO(2) NPs in roots, whereas ZnO NPs were not present. Random amplified polymorphic DNA assay was applied to detect DNA damage and mutations caused by NPs. Results obtained from the exposure of soybean plants to CeO(2) NPs show the appearance of four new bands at 2000 mg L(-1) and three new bands at 4000 mg L(-1) treatment. In this study we demonstrated genotoxic effects from the exposure of soybean plants to CeO(2) NPs.

Antimicrobial potential of green synthesized CeO2 nanoparticles from Olea europaea leaf extract.

PubMed

Maqbool, Qaisar; Nazar, Mudassar; Naz, Sania; Hussain, Talib; Jabeen, Nyla; Kausar, Rizwan; Anwaar, Sadaf; Abbas, Fazal; Jan, Tariq

This article reports the green fabrication of cerium oxide nanoparticles (CeO 2 NPs) using Olea europaea leaf extract and their applications as effective antimicrobial agents. O. europaea leaf extract functions as a chelating agent for reduction of cerium nitrate. The resulting CeO 2 NPs exhibit pure single-face cubic structure, which is examined by X-ray diffraction, with a uniform spherical shape and a mean size 24 nm observed through scanning electron microscopy and transmission electron microscopy. Ultraviolet-visible spectroscopy confirms the characteristic absorption peak of CeO 2 NPs at 315 nm. Fourier transform infrared spectroscopy reflects stretching frequencies at 459 cm -1 , showing utilization of natural components for the production of NPs. Thermal gravimetric analysis predicts the successful capping of CeO 2 NPs by bioactive molecules present in the plant extract. The antimicrobial studies show significant zone of inhibition against bacterial and fungal strains. The higher activities shown by the green synthesized NPs than the plant extract lead to the conclusion that they can be effectively used in biomedical application. Furthermore, reduction of cerium salt by plant extract will reduce environmental impact over chemical synthesis.

Antimicrobial potential of green synthesized CeO2 nanoparticles from Olea europaea leaf extract

PubMed Central

Maqbool, Qaisar; Nazar, Mudassar; Naz, Sania; Hussain, Talib; Jabeen, Nyla; Kausar, Rizwan; Anwaar, Sadaf; Abbas, Fazal; Jan, Tariq

2016-01-01

This article reports the green fabrication of cerium oxide nanoparticles (CeO2 NPs) using Olea europaea leaf extract and their applications as effective antimicrobial agents. O. europaea leaf extract functions as a chelating agent for reduction of cerium nitrate. The resulting CeO2 NPs exhibit pure single-face cubic structure, which is examined by X-ray diffraction, with a uniform spherical shape and a mean size 24 nm observed through scanning electron microscopy and transmission electron microscopy. Ultraviolet-visible spectroscopy confirms the characteristic absorption peak of CeO2 NPs at 315 nm. Fourier transform infrared spectroscopy reflects stretching frequencies at 459 cm−1, showing utilization of natural components for the production of NPs. Thermal gravimetric analysis predicts the successful capping of CeO2 NPs by bioactive molecules present in the plant extract. The antimicrobial studies show significant zone of inhibition against bacterial and fungal strains. The higher activities shown by the green synthesized NPs than the plant extract lead to the conclusion that they can be effectively used in biomedical application. Furthermore, reduction of cerium salt by plant extract will reduce environmental impact over chemical synthesis. PMID:27785011

Effect of Zn doping on structural, optical and thermal properties of CeO2 nanoparticles

NASA Astrophysics Data System (ADS)

Ramasamy, V.; Vijayalakshmi, G.

2015-09-01

The undoped and Zn doped CeO2 nanoparticles were synthesized by chemical precipitation method at room temperature. The undoped and Zn doped CeO2 nanoparticles have been characterized by X-ray powder diffraction (XRD), Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), ultraviolet visible and photoluminescence (PL) spectroscopy, Fourier transform infrared spectroscopy (FTIR) and thermogravimetry and differential thermal analysis (TG-DTA). The cubic fluorite structures of the CeO2 nanoparticles were determined by XRD. The influence of particle size on structural parameters such as lattice parameter (a), inter planar distance (d), dislocation density (δ), microstrain (ε), lattice strain (η) and texture co-efficient (TC) were also determined. The lattice strains were determined by Williamson-Hall plot method. The effect of Zn doping with shifting of the bands were observed by UV-Vis spectroscopy and also their optical band gap were determined. The emission spectra and energy band diagram of the undoped and Zn doped samples were derived from PL spectroscopy. The structural bond vibrations of undoped and Zn doped CeO2 nanoparticles were analyzed by FTIR spectroscopy. The thermal property (weight loss and decomposition) of the sample is observed by TG-DTA curve.

Electrical properties of n-type GaSb substrates and p-type GaSb buffer layers for InAs/InGaSb superlattice infrared detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mitchel, W. C., E-mail: William.Mitchel.1@us.af.mil; Haugan, H. J.; Mou, Shin

2015-09-15

Lightly doped n-type GaSb substrates with p-type GaSb buffer layers are the preferred templates for growth of InAs/InGaSb superlattices used in infrared detector applications because of relatively high infrared transmission and a close lattice match to the superlattices. We report here temperature dependent resistivity and Hall effect measurements of bare substrates and substrate-p-type buffer layer structures grown by molecular beam epitaxy. Multicarrier analysis of the resistivity and Hall coefficient data demonstrate that high temperature transport in the substrates is due to conduction in both the high mobility zone center Γ band and the low mobility off-center L band. High overallmore » mobility values indicate the absence of close compensation and that improved infrared and transport properties were achieved by a reduction in intrinsic acceptor concentration. Standard transport measurements of the undoped buffer layers show p-type conduction up to 300 K indicating electrical isolation of the buffer layer from the lightly n-type GaSb substrate. However, the highest temperature data indicate the early stages of the expected p to n type conversion which leads to apparent anomalously high carrier concentrations and lower than expected mobilities. Data at 77 K indicate very high quality buffer layers.« less

CO2 methanation on the catalyst of Ni/MCM-41 promoted with CeO2.

PubMed

Wang, Xiaoliu; Zhu, Lingjun; Liu, Yincong; Wang, Shurong

2018-06-01

CO 2 as a raw feed combined with renewable hydrogen for the production of useful chemicals and alternative energy products is one of the solutions to environmental and energy problems. In this study, a series of Ni-xCeO 2 /MCM-41 catalysts with a nickel content of 20wt% were prepared through deposition precipitation method for CO 2 methanation. Different characterization methods, including BET, XRD, TEM, SEM, H 2 -TPR and H 2 -TPD were applied to help explore the influence mechanism of CeO 2 on Ni/MCM-41 in CO 2 methanation. It was found that all CeO 2 -promoted catalysts exhibited enhanced catalytic activity when compared to Ni/MCM-41. The catalyst modified with 20wt% CeO 2 showed the best catalytic performance, with CO 2 conversion and CH 4 selectivity of 85.6% and 99.8%, respectively, at the temperature of 380°C under atmospheric pressure. The synergetic effects among Ni 0 active sites, the promoter and the support, including nickel dispersion improvement and increased CO 2 adsorption sites due to the addition of CeO 2 , were considered as important factors for high reactivity of the promoted catalysts. The stability test showed that the promoted catalyst maintained its high reactivity after 30h. Copyright © 2017 Elsevier B.V. All rights reserved.

Training the Revolving-Door CEO

ERIC Educational Resources Information Center

Dutton, Gail

2010-01-01

The revolving-door CEO is becoming a fixture of American companies, and is likely to remain so for some time. With executive tenure at a mere 2.5 years and a CEO turnover rate that increased 11 percent last year, newly hired executives must hit the ground running if they hope to be effective before moving on to their next jobs. Helping them adjust…

The effect of zirconium doping of cerium dioxide nanoparticles on pulmonary and cardiovascular toxicity and biodistribution in mice after inhalation.

PubMed

Dekkers, Susan; Miller, Mark R; Schins, Roel P F; Römer, Isabella; Russ, Mike; Vandebriel, Rob J; Lynch, Iseult; Belinga-Desaunay, Marie-France; Valsami-Jones, Eugenia; Connell, Shea P; Smith, Ian P; Duffin, Rodger; Boere, John A F; Heusinkveld, Harm J; Albrecht, Catrin; de Jong, Wim H; Cassee, Flemming R

2017-08-01

Development and manufacture of nanomaterials is growing at an exponential rate, despite an incomplete understanding of how their physicochemical characteristics affect their potential toxicity. Redox activity has been suggested to be an important physicochemical property of nanomaterials to predict their biological activity. This study assessed the influence of redox activity by modification of cerium dioxide nanoparticles (CeO 2 NPs) via zirconium (Zr) doping on the biodistribution, pulmonary and cardiovascular effects in mice following inhalation. Healthy mice (C57BL/6 J), mice prone to cardiovascular disease (ApoE -/- , western-diet fed) and a mouse model of neurological disease (5 × FAD) were exposed via nose-only inhalation to CeO 2 NPs with varying amounts of Zr-doping (0%, 27% or 78% Zr), or clean air, over a four-week period (4 mg/m 3 for 3 h/day, 5 days/week). Effects were assessed four weeks post-exposure. In all three mouse models CeO 2 NP exposure had no major toxicological effects apart from some modest inflammatory histopathology in the lung, which was not related to the amount of Zr-doping. In ApoE -/- mice CeO 2 did not change the size of atherosclerotic plaques, but there was a trend towards increased inflammatory cell content in relation to the Zr content of the CeO 2 NPs. These findings show that subacute inhalation of CeO 2 NPs causes minimal pulmonary and cardiovascular effect four weeks post-exposure and that Zr-doping of CeO 2 NPs has limited effect on these responses. Further studies with nanomaterials with a higher inherent toxicity or a broader range of redox activities are needed to fully assess the influence of redox activity on the toxicity of nanomaterials.

Construction of g-C3N4/CeO2/ZnO ternary photocatalysts with enhanced photocatalytic performance

NASA Astrophysics Data System (ADS)

Yuan, Yuan; Huang, Gui-Fang; Hu, Wang-Yu; Xiong, Dan-Ni; Zhou, Bing-Xin; Chang, Shengli; Huang, Wei-Qing

2017-07-01

Promoting the spatial separation of photoexcited charge carriers is of paramount significance for photocatalysis. In this work, binary g-C3N4/CeO2 nanosheets are first prepared by pyrolysis and subsequent exfoliation method, then decorated with ZnO nanoparticles to construct g-C3N4/CeO2/ZnO ternary nanocomposites with multi-heterointerfaces. Notably, the type-II staggered band alignments existing between any two of the constituents, as well as the efficient three-level transfer of electron-holes in unique g-C3N4/CeO2/ZnO ternary composites, leads to the robust separation of photoexcited charge carriers, as verified by its photocurrent increased by 8 times under visible light irradiation. The resulting g-C3N4/CeO2/ZnO ternary nanocomposites unveil appreciably increased photocatalytic activity, faster than that of pure g-C3N4, ZnO and g-C3N4/CeO2 by a factor of 11, 4.6 and 3.7, respectively, and good stability toward methylene blue (MB) degradation. The remarkably enhanced photocatalytic activity of g-C3N4/CeO2/ZnO ternary heterostructures can be interpreted in terms of lots of active sites of nanosheet shapes and the efficient charge separation owing to the resulting type-II band alignment with more than one heterointerface and the efficient three-level electron-hole transfer. A plausible mechanism is also elucidated via active species trapping experiments with various scavengers, which indicating that the photogenerated holes and •OH radicals play a crucial role in photodegradation reaction under visible light irradiation. This work suggest that the rational design and construction of type II multi-heterostructures is powerful for developing highly efficient and reusable visible-light photocatalysts for environmental purification and energy conversion.

Versatile fluoride substrates for Fe-based superconducting thin films

NASA Astrophysics Data System (ADS)

Kurth, F.; Reich, E.; Hänisch, J.; Ichinose, A.; Tsukada, I.; Hühne, R.; Trommler, S.; Engelmann, J.; Schultz, L.; Holzapfel, B.; Iida, K.

2013-04-01

We demonstrate the growth of Co-doped BaFe2As2 (Ba-122) thin films on CaF2 (001), SrF2 (001), and BaF2 (001) single crystal substrates using pulsed laser deposition. All films are grown epitaxially despite of a large misfit of -10.6% for BaF2 substrate. For all films, a reaction layer is formed at the interface confirmed by X-ray diffraction and for the films grown on CaF2 and BaF2 additionally by transmission electron microscopy. The superconducting transition temperature of the film on CaF2 is around 27 K, whereas the corresponding values of the films on SrF2 and BaF2 are around 22 K and 21 K, respectively. The Ba-122 on CaF2 shows almost identical crystalline quality and superconducting properties as films on Fe-buffered MgO.

Improved resonance characteristics of GaAs beam resonators by epitaxially induced strain

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yamaguchi, H.; Onomitsu, K.; Kato, K.

2008-06-23

Micromechanical-beam resonators were fabricated using a strained GaAs film grown on relaxed In{sub 0.1}Ga{sub 0.9}As/In{sub 0.1}Al{sub 0.9}As buffer layers. The natural frequency of the fundamental mode was increased 2.5-4 times by applying tensile strain, showing good agreement with the model calculation assuming strain of 0.35% along the beam. In addition, the Q factor of 19 000 was obtained for the best sample, which is one order of magnitude higher than that for the unstrained resonator. This technique can be widely applied for improving the performance of resonator-based micro-/nanoelectromechanical devices.

Perovskite-based heterostructures integrating ferromagnetic-insulating La0.1Bi0.9MnO3

NASA Astrophysics Data System (ADS)

Gajek, M.; Bibes, M.; Barthélémy, A.; Varela, M.; Fontcuberta, J.

2005-05-01

We report on the growth of thin films and heterostructures of the ferromagnetic-insulating perovskite La0.1Bi0.9MnO3. We show that the La0.1Bi0.9MnO3 perovskite grows single phased, epitaxially, and with a single out-of-plane orientation either on SrTiO3 substrates or onto strained La2/3Sr1/3MnO3 and SrRuO3 ferromagnetic-metallic buffer layers. We discuss the magnetic properties of the La0.1Bi0.9MnO3 films and heterostructures in view of their possible potential as magnetoelectric or spin-dependent tunneling devices.

8 MeV electron beam induced modifications in the thermal, structural and electrical properties of nanophase CeO2 for potential electronics applications

NASA Astrophysics Data System (ADS)

Babitha, K. K.; Sreedevi, A.; Priyanka, K. P.; Ganesh, S.; Varghese, Thomas

2018-06-01

The effect of 8 MeV electron beam irradiation on the thermal, structural and electrical properties of CeO2 nanoparticles synthesized by chemical precipitation route was investigated. The dose dependent effect of electron irradiation was studied using various characterization techniques such as, thermogravimetric and differential thermal analyses, X-ray diffraction, Fourier transformed infrared spectroscopy and impedance spectroscopy. Systematic investigation based on the results of structural studies confirm that electron beam irradiation induces defects and particle size variation on CeO2 nanoparticles, which in turn results improvements in AC conductivity, dielectric constant and loss tangent. Structural modifications and high value of dielectric constant for CeO2 nanoparticles due to electron beam irradiation make it as a promising material for the fabrication of gate dielectric in metal oxide semiconductor devices.

Effect of CeO2 on TiC Morphology in Ni-Based Composite Coating

NASA Astrophysics Data System (ADS)

Cai, Yangchuan; Luo, Zhen; Chen, Yao

2018-03-01

The TiC/Ni composite coating with different content of CeO2 was fabricated on the Cr12MoV steel by laser cladding. The microstructure of cladding layers with the different content of CeO2 from the bottom to the surface is columnar crystal, cellular crystal, and equiaxed crystal. When the content of CeO2 is 0 %, the cladding layer has a coarse and nonuniform microstructure and TiC particles gathering in the cladding layer, and then the wear resistance was reduced. Appropriate rare-earth elements refined and homogenised the microstructure and enhanced the content of carbides, precipitated TiC particles and original TiC particles were spheroidised and refined, the wear resistance of the cladding layer was improved significantly. Excessive rare-earth elements polluted the grain boundaries and made the excessive burning loss of TiC particles that reduced the wear resistance of the cladding layer.

Ionic liquid-assisted sonochemical preparation of CeO 2 nanoparticles for CO oxidation

DOE PAGES

Alammar, Tarek; Noei, Heshmat; Wang, Yuemin; ...

2014-10-10

CeO 2 nanoparticles were synthesized via a one-step ultrasound synthesis in different kinds of ionic liquids based on bis(trifluoromethanesulfonylamide, [Tf 2N] –, in combination with various cations including 1-butyl-3-methylimidazolium ([C 4mim] +), 1-ethyl-2,3-dimethylimidazolium ([Edimim] +), butyl-pyridinium([Py 4] +), 1-butyl-1-methyl-pyrrolidinium ([Pyrr 14] +), and 2-hydroxyethyl-trimethylammonium ([N 1112OH] +). Depending on synthetic parameters, such as ionic liquid, Ce(IV) precursor, heating method, and precipitator, formed ceria exhibits different morphologies, varying from nanospheres, nanorods, nanoribbons, and nanoflowers. The morphology, crystallinity, and chemical composition of the obtained materials were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), energy dispersive X-raymore » spectroscopy (EDX), Raman spectroscopy, and N2 adsorption. The structural and electronic properties of the as-prepared CeO 2 samples were probed by CO adsorption using IR spectroscopy under ultrahigh vacuum conditions. The catalytic activities of CeO 2 nanoparticles were investigated in the oxidation of CO. CeO 2 nanospheres obtained sonochemically in [C 4mim][Tf 2N] exhibit the best performance for low-temperature CO oxidation. As a result, the superior catalytic performance of this material can be related to its mesoporous structure, small particle size, large surface area, and high number of surface oxygen vacancy sites.« less

(U) Equation of State and Compaction Modeling for CeO 2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fredenburg, David A.; Chisolm, Eric D.

2014-10-20

Recent efforts have focused on developing a solid-liquid and three-phase equation of state (EOS) for CeO 2, while parallel experimental efforts have focused on obtaining high-fidelity Hugoniot measurements on CeO 2 in the porous state. The current work examines the robustness of two CeO 2 SESAME equations of state, a solid-liquid EOS, 96170, and a three-phase EOS, 96171, by validating the EOS against a suite of high-pressure shock compression experiments on initially porous CeO 2. At lower pressures compaction is considered by incorporating a two-term exponential form of the P-compaction model, using three separate definitions for α(P). Simulations are executedmore » spanning the partially compacted and fully compacted EOS regimes over the pressure range 0.5 - 109 GPa. Comparison of calculated Hugoniot results with those obtained experimentally indicate good agreement for all definitions of α(P) with both the solid-liquid and three-phase EOS in the low-pressure compaction regime. At higher pressures the three-phase EOS does a better job at predicting the measured Hugoniot response, though at the highest pressures EOS 96171 predicts a less compliant response than is observed experimentally. Measured material velocity profiles of the shock-wave after it has transmitted through the powder are also compared with those simulated using with solid-liquid and three-phase EOS. Profiles lend insight into limits of the current experimental design, as well as the threshold conditions for the shock-induced phase transition in CeO 2.« less

Humic Substances-dependent Aggregation and Transport of Cerium Oxide Nanoparticles in Porous Media at Different pHs and Ionic Strengths

NASA Astrophysics Data System (ADS)

Mu, L.; Jacobson, A. R.; Darnault, C. J. G.

2015-12-01

Cerium oxide nanoparticles (CeO2 NPs) are commonly used in several fields and industries, such as chemical and pharmaceutical, due to both their physical and chemical properties. For example, they are employed in the manufacturing of catalysts, as fuel additives, and as polishing agents. The release and exposure to CeO2 NPs can occur during their fabrication, application, and waste disposal, as well as through their life-cycle and accidents. Therefore, the assessment of the dynamic nature of CeO2 NPs stability and mobilty in the environment is of paramount importance to establish the environmental and public health risks associated with their inevitable release in the environment. Humic substances are a key element of soils and have been revealed to possibly affect the fate and transport of nanoparticles in soils. Consequently, our present research aims at investigating the influence that different pHs, monovalent and divalent cations, Suwannee River humic acid, and Suwanee River fulvic acid have on the aggregation, transport, and deposition of CeO2 NPs. Batch studies performed with different concentrations of humic and fulvic acids associated with a wide spectrum of pHs and ionic strengths were examined. Key variables from these batch studies were then examined to simulate experimental conditions commonly encountered in the soil-water system to conduct column transport experiments in order to establish the fate and transport of CeO2 NPs in saturated porous media, which is a critical phase in characterizing the behavior of CeO2 NPs in subsurface environmental systems.

Nitride Semiconductors for Ultraviolet Detection

DTIC Science & Technology

1992-12-01

intrinsic n- and p-type doped GaN, (4) deposition of monocrystalline GaN via atomic layer epitaxy, (5) the initial conduct of studies regarding the ion...crystalline quality of the films; it indicated that all the films for x ranging from I to 0 to be monocrystalline . The Al/Ga composition ratios in the...shown in Figure 1. An analysis of these RHEED patterns indicated that both the AIN buffer layer and the GaN film are monocrystalline films. The RHEED

Strong performance. Healthcare executives reaped big rewards in 2010, with returning hospital CEOs seeing a 58.2% gain in compensation.

PubMed

Galloro, Vince

2011-08-15

Healthcare CEOs saw their compensation slip relative to other industries but still earned big paydays last year. "2010 was a great year for corporate earnings and stock performance," says Steve Kaplan, left, a professor of finance and entrepreneurship. "Part of the reason for the increase in pay is that the CEOs delivered in 2010."

Effect of Co doping on structural and mechanical properties of CeO2

NASA Astrophysics Data System (ADS)

Tiwari, Saurabh; Balasubramanian, Nivedha; Biring, Sajal; Sen, Somaditya

2018-05-01

Sol-gel synthesized nanocrystalline Co doped CeO2 powders [(Ce1-xCoxO2; x=0, 0.03)] were made into cylindrical discs by uniaxial pressing and sintered at 1500°C for 24h to measure mechanical properties. The pure phase formation of undoped and Co doped samples were confirmed by X-ray diffraction and Raman analysis. The scanning electron microscopy (SEM) was used for observing the microstructure of sintered samples to investigate density, porosity, and grain size. The grains size observed for 1500°C sintered samples 5-8 µm. Vickers indentation method used for investigating the micro-hardness. For undoped CeO2 micro-hardness was found 6.2 GPa which decreased with Co doping. It was found that samples follow indentation size effect (ISE) and follow elastic than plastic deformation. Enhanced ductile nature with Co doping in CeO2 made it more promising material for optoelectronic device applications.

Effect of CeO2 and Y2O3 on microstructure, bioactivity and degradability of laser cladding CaO-SiO2 coating on titanium alloy.

PubMed

Li, H C; Wang, D G; Chen, C Z; Weng, F

2015-03-01

To solve the lack of strength of bulk biomaterials for load-bearing applications and improve the bioactivity of titanium alloy (Ti-6Al-4V), CaO-SiO2 coatings on titanium alloy were fabricated by laser cladding technique. The effect of CeO2 and Y2O3 on microstructure and properties of laser cladding coating was analyzed. The cross-section microstructure of ceramic layer from top to bottom gradually changes from cellular-dendrite structure to compact cellular crystal. The addition of CeO2 or Y2O3 refines the microstructure of the ceramic layer in the upper and middle regions. The refining effect on the grain is related to the kinds of additives and their content. The coating is mainly composed of CaTiO3, CaO, α-Ca2(SiO4), SiO2 and TiO2. Y2O3 inhibits the formation of CaO. After soaking in simulated body fluid (SBF), the calcium phosphate layer is formed on the coating surface, indicating the coating has bioactivity. After soaking in Tris-HCl solution, the samples doped with CeO2 or Y2O3 present a lower weight loss, indicating the addition of CeO2 or Y2O3 improves the degradability of laser cladding sample. Copyright © 2015 Elsevier B.V. All rights reserved.

Consensus on the leadership of hospital CEOs and its impact on the participation of physicians in improvement projects.

PubMed

Dückers, Michel L A; Stegeman, Inge; Spreeuwenberg, Peter; Wagner, Cordula; Sanders, Karin; Groenewegen, Peter P

2009-08-01

The success of a Dutch program to disseminate quality improvement projects depends on the participation of physicians working in program hospitals. The leadership of hospital executives (CEOs) is considered an important explanation. This study aims to determine whether the relation, between the extent to which physicians notice their CEOs stimulate improvement initiatives and the number of projects joined by physicians, is moderated by the consensus among physicians working in the same hospital. Multilevel analyses are applied on data of 286 physicians from eight hospitals to: (1) estimate whether participation depends on noticing if CEOs stimulate improvement, (2) test if an individual's participation differs when more colleagues have the same opinion (effect modification). Significant moderator effects are found. The participation of physicians, noticing that CEOs stimulate improvement is higher when more colleagues share this opinion. For physicians not knowing whether improvement is encouraged, higher consensus coincides with lower participation. Project involvement of physicians depends on their consensus about encouragement by CEOs. This confirms the importance of strategic leaders in dissemination programs. Further research is recommended into causes of CEO leadership visibility and methods to strengthen leadership climate.

III-nitride integration on ferroelectric materials of lithium niobate by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Namkoong, Gon; Lee, Kyoung-Keun; Madison, Shannon M.; Henderson, Walter; Ralph, Stephen E.; Doolittle, W. Alan

2005-10-01

Integration of III-nitride electrical devices on the ferroelectric material lithium niobate (LiNbO3) has been demonstrated. As a ferroelectric material, lithium niobate has a polarization which may provide excellent control of the polarity of III-nitrides. However, while high temperature, 1000°C, thermal treatments produce atomically smooth surfaces, improving adhesion of GaN epitaxial layers on lithium niobate, repolarization of the substrate in local domains occurs. These effects result in multi domains of mixed polarization in LiNbO3, producing inversion domains in subsequent GaN epilayers. However, it is found that AlN buffer layers suppress inversion domains of III-nitrides. Therefore, two-dimensional electron gases in AlGaN /GaN heterojunction structures are obtained. Herein, the demonstration of the monolithic integration of high power devices with ferroelectric materials presents possibilities to control LiNbO3 modulators on compact optoelectronic/electronic chips.

CeO2/rGO/Pt sandwich nanostructure: rGO-enhanced electron transmission between metal oxide and metal nanoparticles for anodic methanol oxidation of direct methanol fuel cells.

PubMed

Yu, Xue; Kuai, Long; Geng, Baoyou

2012-09-21

Pt-based nanocomposites have been of great research interest. In this paper, we design an efficient MO/rGO/Pt sandwich nanostructure as an anodic electrocatalyst for DMFCs with combination of the merits of rigid structure of metallic oxides (MOs) and excellent electronic conductivity of reduced oxidized graphene (rGO) as well as overcoming their shortcomings. In this case, the CeO(2)/rGO/Pt sandwich nanostructure is successfully fabricated through a facile hydrothermal approach in the presence of graphene oxide and CeO(2) nanoparticles. This structure has a unique building architecture where rGO wraps up the CeO(2) nanoparticles and Pt nanoparticles are homogeneously dispersed on the surface of rGO. This novel structure endows this material with great electrocatalytic performance in methanol oxidation: it reduces the overpotential of methanol oxidation significantly and its electrocatalytic activity and stability are much enhanced compared with Pt/rGO, CeO(2)/Pt and Pt/C catalysts. This work supplies a unique MO/rGO/Pt sandwich nanostructure as an efficient way to improve the electrocatalytic performance, which will surely shed some light on the exploration of some novel structures of electrocatalyst for DMFCs.

Effect of CeO2 addition on the properties of FeAl based alloy produced by mechanical alloying technique

NASA Astrophysics Data System (ADS)

Khaerudini, Deni S.; Muljadi, Sardjono, P.; Tetuko, Anggito P.; Sebayang, P.; Ginting, M.

2013-09-01

Iron aluminides based on FeAl is notable for their low materials cost, ease of fabrication and good corrosion, suffixation and oxidation resistance. However, the application based on these unique properties still require the development of Fe-Al based alloy since it shows some drawbacks such as a lack of high temperature strength and low ductility. To improve the mechanical properties of FeAl based alloy, ceria (CeO2) will be added to this compound. FeAl based alloy produced by the mechanical alloying (MA) technique. The developed specimens then assessed with respect to oxidation behaviour in high temperature, scale microstructure and hardness. The surface morphologies of the alloy evaluated and observed using scanning electron microscopy (SEM) with an energy dispersive X-ray spectroscopy (EDX). The phase structures of oxide scale formed on them were identified by X-ray diffraction (XRD). The results found that the FeAl intermetallic compound containing CeO2 0.5 wt.% is less pores and CeO2 1.0 wt.% is more homogen in powder and solid form, higher hardness and increase in their resistance to oxidation behaviour in high temperature compared with another percentage of CeO2.

Study of the growth of CeO2 nanoparticles onto titanate nanotubes

NASA Astrophysics Data System (ADS)

Marques, Thalles M. F.; Ferreira, Odair P.; da Costa, Jose A. P.; Fujisawa, Kazunori; Terrones, Mauricio; Viana, Bartolomeu C.

2015-12-01

We report the study of the growth of CeO2 nanoparticles on the external walls and Ce4+ intercalation within the titanate nanotubes. The materials were fully characterized by multiple techniques, such as: Raman spectroscopy, infrared spectroscopy (FTIR), energy dispersive spectroscopy (EDS), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). The ion exchange processes in the titanate nanotubes were carried out using different concentrations of Ce4+ in aqueous solution. Our results indicate that the growth of CeO2 nanoparticles grown mediated by the hydrolysis in the colloidal species of Ce and the attachment onto the titanate nanotubes happened and get it strongly anchored to the titanate nanotube surface by a simple electrostatic interaction between the nanoparticles and titanate nanotubes, which can explain the small size and even distribution of nanoparticles on titanate supports. It was demonstrated that it is possible to control the amount and size of CeO2 nanoparticles onto the nanotube surface, the species of the Ce ions intercalated between the layers of titanate nanotubes, and the materials could be tuned for using in specific catalysis in according with the amount of CeO2 nanoparticles, their oxygen vacancies/defects and the types of Ce species (Ce4+ or Ce3+) present into the nanotubes.

Immunomodulation and T Helper TH1/TH2 Response Polarization by CeO2 and TiO2 Nanoparticles

PubMed Central

Schanen, Brian C.; Das, Soumen; Reilly, Christopher M.; Warren, William L.; Self, William T.; Seal, Sudipta; Drake, Donald R.

2013-01-01

Immunomodulation by nanoparticles, especially as related to the biochemical properties of these unique materials, has scarcely been explored. In an in vitro model of human immunity, we demonstrate two catalytic nanoparticles, TiO2 (oxidant) and CeO2 (antioxidant), have nearly opposite effects on human dendritic cells and T helper (TH) cells. For example, whereas TiO2 nanoparticles potentiated DC maturation that led towards TH1-biased responses, treatment with antioxidant CeO2 nanoparticles induced APCs to secrete the anti-inflammatory cytokine, IL-10, and induce a TH2-dominated T cell profile. In subsequent studies, we demonstrate these results are likely explained by the disparate capacities of the nanoparticles to modulate ROS, since TiO2, but not CeO2 NPs, induced inflammatory responses through an ROS/inflammasome/IL-1β pathway. This novel capacity of metallic NPs to regulate innate and adaptive immunity in profoundly different directions via their ability to modulate dendritic cell function has strong implications for human health since unintentional exposure to these materials is common in modern societies. PMID:23667525

Stress and magnetism in LaCoO3 films

NASA Astrophysics Data System (ADS)

Demkov, Alex

2012-02-01

Cobaltates exhibit a wide variety of exciting electronic properties resulting from strong electron correlations; these include superconductivity, giant magnetoresistance, metal-insulator transition, and strong thermoelectric effects. This makes them an excellent platform to study correlated electron physics, as well as being useful for various applications in electronics and sensors. In the ground state in the bulk, the prototypical complex cobalt oxide LaCoO3 is in a spin-compensated low-spin state (t2g^6), which results in the ground state being nonmagnetic. In a recent experiment, Fuchs et al. (Phys. Rev. B 75, 144402 (2007)) have demonstrated that a ferromagnetic ground state could be stabilized by epitaxial tensile strain resulting in a Curie temperature (TC) of ˜90 K when LaCoO3 (LCO) is grown on SrTiO3 (STO) using pulsed laser deposition. In this talk I will discuss our recent successful attempt to integrate a LCO/STO heterostructure with Si (001) using molecular beam epitaxy. We have grown strained, epitaxial LaCoO3 on (100)-oriented silicon using a single crystal STO buffer (Appl.Phys. Lett. 98, 053104 (2011)). SQUID magnetization measurements confirm that the ground state of the strained LaCoO3 is ferromagnetic with a TC of 85 K. Our first-principles calculations of strained LaCoO3 using the LSDA+U method show that beyond biaxial tensile strain of 2.5% local magnetic moments, originating from the high spin state of Co^3+, emerge in a low spin Co^3+ matrix. Ferromagnetism found in tensile-strained LaCoO3 is tightly coupled to the material's orbital and structural response to applied strain. Theoretical calculations show how LaCoO3 accommodates tensile strain via spin state disproportionation, resulting in an unusual sublattice structure.

Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ayari, Taha; Li, Xin; Voss, Paul L.

Recent advances in epitaxial growth have led to the growth of III-nitride devices on 2D layered h-BN. This advance has the potential for wafer-scale transfer to arbitrary substrates, which could improve the thermal management and would allow III-N devices to be used more flexibly in a broader range of applications. We report wafer scale exfoliation of a metal organic vapor phase epitaxy grown InGaN/GaN Multi Quantum Well (MQW) structure from a 5 nm thick h-BN layer that was grown on a 2-inch sapphire substrate. The weak van der Waals bonds between h-BN atomic layers break easily, allowing the MQW structure tomore » be mechanically lifted off from the sapphire substrate using a commercial adhesive tape. This results in the surface roughness of only 1.14 nm on the separated surface. Structural characterizations performed before and after the lift-off confirm the conservation of structural properties after lift-off. Cathodoluminescence at 454 nm was present before lift-off and 458 nm was present after. Electroluminescence near 450 nm from the lifted-off structure has also been observed. These results show that the high crystalline quality ultrathin h-BN serves as an effective sacrificial layer—it maintains performance, while also reducing the GaN buffer thickness and temperature ramps as compared to a conventional two-step growth method. These results support the use of h-BN as a low-tack sacrificial underlying layer for GaN-based device structures and demonstrate the feasibility of large area lift-off and transfer to any template, which is important for industrial scale production.« less

Effects of Cerium Oxide Nanoparticles on Sorghum Plant Traits

NASA Astrophysics Data System (ADS)

Mu, L.; Chen, Y.; Darnault, C. J. G.; Rauh, B.; Kresovich, S.; Korte, C.

2015-12-01

Nanotechnology and nanomaterials are considered as the development of the modern science. However, besides with that wide application, nanoparticles arouse to the side effects on the environment and human health. As the catalyst of ceramics and fuel industry, Cerium (IV) oxide nanoparticles (CeO2 NPs) can be found in the environment following their use and life-cycle. Therefore, it is critical to assess the potential effects that CeO2 NPs found in soils may have on plants. In this study, CeO2 NPs were analyzed for the potential influence on the sorghum [Sorghum bicolor (L.) Moench] (Reg. no. 126) (PI 154844) growth and traits. The objectives of this research were to determine whether CeO2 NPs impact the sorghum germination and growth characteristics. The sorghum was grown in the greenhouse located at Biosystems Research Complex, Clemson University under different CeO2 NPs treatments (0mg; 100mg; 500mg; 1000mg CeO2 NPs/Kg soil) and harvested around each month. At the end of the each growing period, above ground vegetative tissue was air-dried, ground to 2mm particle size and compositional traits estimated using near-infrared spectroscopy. Also, the NPK value of the sorghum tissue was tested by Clemson Agriculture Center. After the first harvest, the result showed that the height of above ground biomass under the nanoparticles stress was higher than that of control group. This difference between the control and the nanoparticles treatments was significant (F>F0.05; LSD). Our results also indicated that some of the compositional traits were impacted by the different treatments, including the presence and/or concentrations of the nanoparticles.

First-principles characterization of formate and carboxyl adsorption on the stoichiometric CeO2(111) and CeO2(110) surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mei, Donghai

2013-05-20

Molecular adsorption of formate and carboxyl on the stoichiometric CeO2(111) and CeO2(110) surfaces was studied using periodic density functional theory (DFT+U) calculations. Two distinguishable adsorption modes (strong and weak) of formate are identified. The bidentate configuration is more stable than the monodentate adsorption configuration. Both formate and carboxyl bind at the more open CeO2(110) surface are stronger. The calculated vibrational frequencies of two adsorbed species are consistent with experimental measurements. Finally, the effects of U parameters on the adsorption of formate and carboxyl over both CeO2 surfaces were investigated. We found that the geometrical configurations of two adsorbed species aremore » not affected by using different U parameters (U=0, 5, and 7). However, the calculated adsorption energy of carboxyl pronouncedly increases with the U value while the adsorption energy of formate only slightly changes (<0.2 eV). The Bader charge analysis shows the opposite charge transfer occurs for formate and carboxyl adsorption where the adsorbed formate is negatively charge whiled the adsorbed carboxyl is positively charged. Interestingly, with the increasing U parameter, the amount of charge is also increased. This work was supported by the Laboratory Directed Research and Development (LDRD) project of the Pacific Northwest National Laboratory (PNNL) and by a Cooperative Research and Development Agreement (CRADA) with General Motors. The computations were performed using the Molecular Science Computing Facility in the William R. Wiley Environmental Molecular Sciences Laboratory (EMSL), which is a U.S. Department of Energy national scientific user facility located at PNNL in Richland, Washington. Part of the computing time was also granted by the National Energy Research Scientific Computing Center (NERSC)« less

Defect characterization of MOCVD grown AlN/AlGaN films on sapphire substrates by TEM and TKD

NASA Astrophysics Data System (ADS)

O'Connell, J. H.; Lee, M. E.; Westraadt, J.; Engelbrecht, J. A. A.

2018-04-01

High resolution transmission electron microscopy (TEM) has been used to characterize defects structures in AlN/AlGaN epilayers grown by metal-organic chemical vapour deposition (MOCVD) on c-plane sapphire (Al2O3) substrates. The AlN buffer layer was shown to be epitaxially grown on the sapphire substrate with the two lattices rotated relatively through 30°. The AlN layer had a measured thickness of 20-30 nm and was also shown to contain nano-sized voids. The misfit dislocations in the buffer layer have been shown to be pure edge with a spacing of 1.5 nm. TEM characterization of the AlGaN epilayers was shown to contain a higher than expected threading dislocation density of the order 1010 cm-2 as well as the existence of "nanopipes". TEM analysis of the planar lamella for AlGaN has presented evidence for the possibility of columnar growth. The strain and misorientation mapping in the AlGaN epilayer by transmission Kikuchi diffraction (TKD) using the FIB lamella has also been demonstrated to be complimentary to data obtained by TEM imaging.

Strain Dependent Electronic Structure and Band Offset Tuning at Heterointerfaces of ASnO3 (A=Ca, Sr, and Ba) and SrTiO3

PubMed Central

Baniecki, John D.; Yamazaki, Takashi; Ricinschi, Dan; Van Overmeere, Quentin; Aso, Hiroyuki; Miyata, Yusuke; Yamada, Hiroaki; Fujimura, Norifumi; Maran, Ronald; Anazawa, Toshihisa; Valanoor, Nagarajan; Imanaka, Yoshihiko

2017-01-01

The valence band (VB) electronic structure and VB alignments at heterointerfaces of strained epitaxial stannate ASnO3 (A=Ca, Sr, and Ba) thin films are characterized using in situ X-ray and ultraviolet photoelectron spectroscopies, with band gaps evaluated using spectroscopic ellipsometry. Scanning transmission electron microscopy with geometric phase analysis is used to resolve strain at atomic resolution. The VB electronic structure is strain state dependent in a manner that correlated with a directional change in Sn-O bond lengths with strain. However, VB offsets are found not to vary significantly with strain, which resulted in ascribing most of the difference in band alignment, due to a change in the band gaps with strain, to the conduction band edge. Our results reveal significant strain tuning of conduction band offsets using epitaxial buffer layers, with strain-induced offset differences as large as 0.6 eV possible for SrSnO3. Such large conduction band offset tunability through elastic strain control may provide a pathway to minimize the loss of charge confinement in 2-dimensional electron gases and enhance the performance of photoelectrochemical stannate-based devices. PMID:28195149

Thermodynamic properties of gaseous cerium molybdates and tungstates studied by Knudsen effusion mass spectrometry.

PubMed

Shugurov, S M; Panin, A I; Lopatin, S I

2018-06-21

CeO 2 -WO 3 and CeO 2 -MoO 3 catalysts have shown excellent performance in the selective reduction of NO x by ammonia (NH 3 -selective catalytic reduction) over a wide temperature range. Strong interaction between CeO 2 and WO 3 or MoO 3 might be the dominant reason for the high activity of these mixed oxides. Studies of ceria-containing gaseous salts involve considerable experimental difficulties, since the transition of such salts to vapor requires high temperatures. To predict the possibility of the existence of gaseous associates formed by cerium and molybdenum (tungsten) oxides it is important to know their thermodynamic characteristics. Until the present investigation, gaseous cerium oxyacid salts were unknown. Knudsen effusion mass spectrometry was used to determine the partial pressures of vapor species and the equilibrium constants of gas-phase reactions, as well as the formation and atomization enthalpies of gaseous cerium molybdates and tungstates. CeO 2 was evaporated from molybdenum and tungsten effusion cells containing gold metal as a pressure standard. A theoretical study of gaseous cerium gaseous molybdates and tungstates was performed by several quantum chemical methods. In the temperature range 2050-2400 K, CeO, CeO 2 , XO 2 , XO 3 , CeWO 3 , CeXO 4 , CeXO 5 (X = Mo, W) and CeMo 2 O 7 were found to be the main vapor species over the CeO 2 - Mo (W) systems. On the basis of the equilibrium constants of the gaseous reactions, the standard formation enthalpies of gaseous CeWO 3 , CeXO 4 , CeXO 5 (X = Mo, W) and CeMo 2 O 7 at 298 K were determined. Energetically favorable structures of gaseous cerium salts were found and vibrational frequencies were evaluated in the harmonic approximation. The thermal stability of gaseous cerium oxyacid salts was confirmed by high-temperature mass spectrometry. Reaction enthalpies of the gaseous cerium molybdates and tungstates from gaseous cerium, molybdenum and tungsten oxides were evaluated theoretically and the obtained values are in reasonable agreement with the experimental one. This article is protected by copyright. All rights reserved.

Pd/CeO2/SiC Chemical Sensors

NASA Technical Reports Server (NTRS)

Lu, Weijie; Collins, W. Eugene

2005-01-01

The incorporation of nanostructured interfacial layers of CeO2 has been proposed to enhance the performances of Pd/SiC Schottky diodes used to sense hydrogen and hydrocarbons at high temperatures. If successful, this development could prove beneficial in numerous applications in which there are requirements to sense hydrogen and hydrocarbons at high temperatures: examples include monitoring of exhaust gases from engines and detecting fires. Sensitivity and thermal stability are major considerations affecting the development of high-temperature chemical sensors. In the case of a metal/SiC Schottky diode for a number of metals, the SiC becomes more chemically active in the presence of the thin metal film on the SiC surface at high temperature. This increase in chemical reactivity causes changes in chemical composition and structure of the metal/SiC interface. The practical effect of the changes is to alter the electronic and other properties of the device in such a manner as to degrade its performance as a chemical sensor. To delay or prevent these changes, it is necessary to limit operation to a temperature <450 C for these sensor structures. The present proposal to incorporate interfacial CeO2 films is based partly on the observation that nanostructured materials in general have potentially useful electrical properties, including an ability to enhance the transfer of electrons. In particular, nanostructured CeO2, that is CeO2 with nanosized grains, has shown promise for incorporation into hightemperature electronic devices. Nanostructured CeO2 films can be formed on SiC and have been shown to exhibit high thermal stability on SiC, characterized by the ability to withstand temperatures somewhat greater than 700 C for limited times. The exchanges of oxygen between CeO2 and SiC prevent the formation of carbon and other chemical species that are unfavorable for operation of a SiC-based Schottky diode as a chemical sensor. Consequently, it is anticipated that in a Pd/CeO2/SiC Schottky diode, the nanostructured interfacial CeO2 layer would contribute to thermal stability and, by contributing to transfer of electrons, would also contribute to sensitivity.

In situ x-ray surface diffraction chamber for pulsed laser ablation film growth studies

NASA Astrophysics Data System (ADS)

Tischler, J. Z.; Eres, G.; Lowndes, D. H.; Larson, B. C.; Yoon, M.; Chiang, T.-C.; Zschack, Paul

2000-06-01

Pulsed laser deposition is highly successful for growing complex films such as oxides for substrate buffer layers and HiTc oxide superconductors. A surface diffraction chamber has been constructed to study fundamental aspects of non-equilibrium film growth using pulsed laser deposition. Due to the pulsed nature of the ablating laser, the deposited atoms arrive on the substrate in short sub-millisecond pulses. Thus monitoring the surface x-ray diffraction following individual laser pulses (with resolution down to ˜1 ms) provides direct information on surface kinetics and the aggregation process during film growth. The chamber design, based upon a 2+2 surface diffraction geometry with the modifications necessary for laser ablation, is discussed, and initial measurements on homo-epitaxial growth of SrTiO3 are presented.

Cross-beam pulsed laser fabrication of Free-Standing Nanostructured Carbon Nanotubes-Pt-Ceria Anode with unprecedented electroactivity and durability for ethanol oxidation

NASA Astrophysics Data System (ADS)

Wang, Youling; Tabet-Aoul, Amel; Gougis, Maxime; Mohamedi, Mohamed

2015-01-01

Owing to its inherent properties such as great capacity to store and release oxygen, lattice oxygen that has a key role in removing the CO poisoning effect, non-toxicity, abundance, low cost and low temperature processing, CeO2 is emerging as a unique class of electrode material for low temperature polymer electrolyte fuel cells such as direct ethanol fuel cells (DEFCs). However, the maximal exploitation of its functional properties is strictly reliant on the availability of optimized synthesis routes that allow tailor-designing, architecturing and manipulation of CeO2 in a precise manner when it is combined with other functional materials. Here we use the cross-beam pulsed laser deposition (CBPLD) technique to synthesize free-standing (binderless) Pt-CeO2 nanostructured thin films onto carbon nanotubes as anodes for ethanol oxidation reaction. Further significance of this work is that it establishes the importance in the design of the catalyst layer architecture. Indeed, we demonstrate here that when CeO2 material is beneath or when it is mixed with Pt, the interactions between Pt with CeO2 are not similar leading inevitably to different electrocatalytic performances. Given proper tailoring synthesis conditions, CBPLD-developed Pt-CeO2 thin films are remarkably stable and provide electrochemical performance much greater than the layer onto layer CeO2/Pt architecture.

Recrystallization in Si upon ion irradiation at room temperature in Co/Si(111) thin film systems

NASA Astrophysics Data System (ADS)

Banu, Nasrin; Satpati, B.; Dev, B. N.

2018-04-01

After several decades of research it was concluded that for a constant flux recrystallization in Si upon ion irradiation is possible only at high temperature. At low temperature or at room temperature only amorphization can take place. However we have observed recrystallization in Si upon ion irradiation at room temperature in a Co/Si thin film system. The Co/Si sample was prepared by deposition of 25 nm Co on clean Si(111) substrate. An oxide layer (˜ 2nm) of cobalt at the top of the film due to air exposure. The ion irradiation was done at room temperature under high vacuum with 1MeV Si+ ion with low beam current < 400 nA. Earlier we have shown similar ion induced recrystallization in Si(100) substrate which had a sandwich Si/Ni/Si structure. This system had an epitaxial buffer Si layer on Si substrate. This study also shows that the phenomenon is independent of substrate orientation and buffer layer. We have used transmission electron microscopy (TEM) to study the recrystallization behavior.

A New Strategy for Humidity Independent Oxide Chemiresistors: Dynamic Self-Refreshing of In2 O3 Sensing Surface Assisted by Layer-by-Layer Coated CeO2 Nanoclusters.

PubMed

Yoon, Ji-Wook; Kim, Jun-Sik; Kim, Tae-Hyung; Hong, Young Jun; Kang, Yun Chan; Lee, Jong-Heun

2016-08-01

The humidity dependence of the gas sensing characteristics of metal oxide semiconductors has been one of the greatest obstacles for gas sensor applications during the last five decades because ambient humidity dynamically changes with the environmental conditions. Herein, a new and novel strategy is reported to eliminate the humidity dependence of the gas sensing characteristics of oxide chemiresistors via dynamic self-refreshing of the sensing surface affected by water vapor chemisorption. The sensor resistance and gas response of pure In2 O3 hollow spheres significantly change and deteriorate in humid atmospheres. In contrast, the humidity dependence becomes negligible when an optimal concentration of CeO2 nanoclusters is uniformly loaded onto In2 O3 hollow spheres via layer-by-layer (LBL) assembly. Moreover, In2 O3 sensors LBL-coated with CeO2 nanoclusters show fast response/recovery, low detection limit (500 ppb), and high selectivity to acetone even in highly humid conditions (relative humidity 80%). The mechanism underlying the dynamic refreshing of the In2 O3 sensing surfaces regardless of humidity variation is investigated in relation to the role of CeO2 and the chemical interaction among CeO2 , In2 O3 , and water vapor. This strategy can be widely used to design high performance gas sensors including disease diagnosis via breath analysis and pollutant monitoring. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Diamagnetism to ferromagnetism in Sr-substituted epitaxial BaTiO{sub 3} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singamaneni, Srinivasa Rao, E-mail: ssingam@ncsu.edu; Prater, John T.; Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695

2016-04-04

We report on the ferromagnetic-like behavior in otherwise diamagnetic BaTiO{sub 3} (BTO) thin films upon doping with non-magnetic element Sr having the composition Ba{sub 0.4}Sr{sub 0.6}TiO{sub 3} (BST). The epitaxial integration of BST (∼800 nm) thick films on Si (100) substrate was achieved using MgO (40 nm) and TiN (20 nm) as buffer layers to prepare BST/MgO/TiN/Si (100) heterostructure by pulsed laser deposition. The c-axis oriented and cube-on-cube epitaxial BST is formed on Si (100) as evidenced by the in-plane and out-of-plane X-ray diffraction. All the deposited films are relaxed through domain matching epitaxy paradigm as observed from X-ray diffraction pattern and A{submore » 1}TO{sub 3} mode (at 521.27 cm{sup −1}) of Raman spectra. As-deposited BST thin films reveal ferromagnetic-like properties, which persist up to 400 K. The magnetization decreases two-fold upon oxygen annealing. In contrast, as-deposited un-doped BTO films show diamagnetism. Electron spin resonance measurements reveal no evidence of external magnetic impurities. XRD and X-ray photoelectron spectroscopy spectra show significant changes influenced by Sr doping in BTO. The ferromagnetic-like behavior in BST could be due to the trapped electron donors from oxygen vacancies resulting from Sr-doping.« less

In-situ IR spectroscopy as a probe of oxidation/reduction of Ce in nanostructured CeO2

NASA Astrophysics Data System (ADS)

Wu, Weiqiang; Savereide, Louisa Marie; Notestein, Justin; Weitz, Eric

2018-07-01

The redox properties of CeO2 are crucial in its applications in a wide range of catalytic processes. In the present research, in-situ IR spectroscopy is shown to be a viable and convenient method for the characterization of the oxidation state of Ce by monitoring the spin-orbit transition in Ce3+ (2F5/2 → 2F7/2) at ∼2147 cm-1. By monitoring this transition in CeO2 nanorods, the apparent activation energy for the production of oxygen vacancies that accompany the formation of Ce3+ has been determined and is shown to be lower for reduction with cyclohexene than with hydrogen. The bi-exponential kinetics for the formation of oxygen vacancies in CeO2 nanorods is discussed. An application of this method to real time monitoring of the oxidation state of Ce in the oxidation of cyclohexene on vanadia supported on ceria is presented as an example of how this method can be used as an operando probe of reaction mechanisms.

CeO2 nanoparticles alter the outcome of species interactions.

PubMed

Peng, Cheng; Chen, Ying; Pu, Zhichao; Zhao, Qing; Tong, Xin; Chen, Yongsheng; Jiang, Lin

2017-06-01

Despite considerable research on the environmental impacts of nanomaterials, we know little about how they influence interactions between species. Here, we investigated the acute (12 d) and chronic (64 d) toxicities of cerium oxide nanoparticles (CeO 2 NPs) and bulk particles (0-200 mg/L) to three ciliated protist species (Loxocephalus sp., Paramecium aurelia, and Tetrahymena pyriformis) in single-, bi-, and multispecies microcosms. The results show that CeO 2 NPs strongly affected the interactions between ciliated protozoan species. When exposed to the highest CeO 2 NPs (200 mg/L), the intrinsic growth rates of Loxocephalus and Paramecium were significantly decreased by 18.87% and 88.27%, respectively, while their carrying capacities declined by more than 90%. However, CeO 2 NP exposure made it difficult to predict outcomes of interspecific competition between species. At higher NP exposure (100 and 200 mg/L), competition led to the extinction of both species in the Loxocephalus and Paramecium microcosms that survived in the absence of competitors or CeO 2 NPs. Further, the presence of potential competitors improved the survival of Loxocephalus to hundreds of individuals per milliliter in microcosms with Tetrahymena where Loxocephalus would otherwise not be able to tolerate high levels of NP exposure. This result could be attributed to weakened NP adsorption on the cell surface due to competitor-caused reduction of NP surface charge (from -18.52 to -25.17 mV) and intensified NP aggregation via phagocytosis of NPs by ciliate cells. Our results emphasize the need to explicitly consider species interactions for a more comprehensive understanding of the ecological consequences of NP exposure.