Optical XOR gate

DOEpatents

Vawter, G. Allen

2013-11-12

An optical XOR gate is formed as a photonic integrated circuit (PIC) from two sets of optical waveguide devices on a substrate, with each set of the optical waveguide devices including an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical XOR gate utilizes two digital optical inputs to generate an XOR function digital optical output. The optical XOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pradeepkumar, Aiswarya; Mishra, Neeraj; Kermany, Atieh Ranjbar

Epitaxial cubic silicon carbide on silicon is of high potential technological relevance for the integration of a wide range of applications and materials with silicon technologies, such as micro electro mechanical systems, wide-bandgap electronics, and graphene. The hetero-epitaxial system engenders mechanical stresses at least up to a GPa, pressures making it extremely challenging to maintain the integrity of the silicon carbide/silicon interface. In this work, we investigate the stability of said interface and we find that high temperature annealing leads to a loss of integrity. High–resolution transmission electron microscopy analysis shows a morphologically degraded SiC/Si interface, while mechanical stress measurementsmore » indicate considerable relaxation of the interfacial stress. From an electrical point of view, the diode behaviour of the initial p-Si/n-SiC junction is catastrophically lost due to considerable inter-diffusion of atoms and charges across the interface upon annealing. Temperature dependent transport measurements confirm a severe electrical shorting of the epitaxial silicon carbide to the underlying substrate, indicating vast predominance of the silicon carriers in lateral transport above 25 K. This finding has crucial consequences on the integration of epitaxial silicon carbide on silicon and its potential applications.« less

Epitaxial growth of three dimensionally structured III-V photonic crystal via hydride vapor phase epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zheng, Qiye; Kim, Honggyu; Zhang, Runyu

2015-12-14

Three-dimensional (3D) photonic crystals are one class of materials where epitaxy, and the resultant attractive electronic properties, would enable new functionalities for optoelectronic devices. Here we utilize self-assembled colloidal templates to fabricate epitaxially grown single crystal 3D mesostructured GaxIn1-xP (GaInP) semiconductor photonic crystals using hydride vapor phase epitaxy (HVPE). The epitaxial relationship between the 3D GaInP and the substrate is preserved during the growth through the complex geometry of the template as confirmed by X-ray diffraction (XRD) and high resolution transmission electron microscopy. XRD reciprocal space mapping of the 3D epitaxial layer further demonstrates the film to be nearly fullymore » relaxed with a negligible strain gradient. Fourier transform infrared spectroscopy reflection measurement indicates the optical properties of the photonic crystal which agree with finite difference time domain simulations. This work extends the scope of the very few known methods for the fabrication of epitaxial III-V 3D mesostructured materials to the well-developed HVPE technique.« less

Epitaxial growth of three dimensionally structured III-V photonic crystal via hydride vapor phase epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zheng, Qiye; Kim, Honggyu; Zhang, Runyu

2015-12-14

Three-dimensional (3D) photonic crystals are one class of materials where epitaxy, and the resultant attractive electronic properties, would enable new functionalities for optoelectronic devices. Here we utilize self-assembled colloidal templates to fabricate epitaxially grown single crystal 3D mesostructured Ga{sub x}In{sub 1−x}P (GaInP) semiconductor photonic crystals using hydride vapor phase epitaxy (HVPE). The epitaxial relationship between the 3D GaInP and the substrate is preserved during the growth through the complex geometry of the template as confirmed by X-ray diffraction (XRD) and high resolution transmission electron microscopy. XRD reciprocal space mapping of the 3D epitaxial layer further demonstrates the film to bemore » nearly fully relaxed with a negligible strain gradient. Fourier transform infrared spectroscopy reflection measurement indicates the optical properties of the photonic crystal which agree with finite difference time domain simulations. This work extends the scope of the very few known methods for the fabrication of epitaxial III-V 3D mesostructured materials to the well-developed HVPE technique.« less

Interfacing epitaxial oxides to gallium nitride

NASA Astrophysics Data System (ADS)

Losego, Mark Daniel

Molecular beam epitaxy (MBE) is lauded for its ability to control thin film material structures at the atomic level. This precision of control can improve performance of microelectronic devices and cultivate the development of novel device structures. This thesis explores the utility of MBE for designing interfaces between oxide epilayers and the wide band gap semiconductor gallium nitride (GaN). The allure of wide gap semiconductor microelectronics (like GaN, 3.4 eV) is their ability to operate at higher frequencies, higher powers, and higher temperatures than current semiconductor platforms. Heterostructures between ferroelectric oxides and GaN are also of interest for studying the interaction between GaN's fixed polarization and the ferroelectric's switchable polarization. Two major obstacles to successful integration of oxides with GaN are: (1) interfacial trap states; and (2) small electronic band offsets across the oxide/nitride interface due to the semiconductor's large band gap. For this thesis, epitaxial rocksalt oxide interfacial layers (˜8 eV band gap) are investigated as possible solutions to overcoming the challenges facing oxide integration with GaN. The cubic close-packed structure of rocksalt oxides forms a suitable epitaxial interface with the hexagonal close-packed wurtzite lattice of GaN. Three rocksalt oxide compounds are investigated in this thesis: MgO, CaO, and YbO. All are found to have a (111) MO || (0001) GaN; <1 10> MO || <11 20> GaN epitaxial relationship. Development of the epilayer microstructure is dominated by the high-energy polar growth surface (drives 3D nucleation) and the interfacial symmetry, which permits the formation of twin boundaries. Using STEM, strain relief for these ionicly bonded epilayers is observed to occur through disorder within the initial monolayer of growth. All rocksalt oxides demonstrate chemical stability with GaN to >1000°C. Concurrent MBE deposition of MgO and CaO is known to form complete solid solutions. By controlling the composition of these alloys, the oxide's lattice parameter can be engineered to match GaN and reduce interfacial state density. Compositional control is a universal challenge to oxide MBE, and the MgO-CaO system (MCO) is further complicated by magnesium's high volatility and the lack of a thermodynamically stable phase. Through a detailed investigation of MgO's deposition rate and subsequent impact on MCO composition, the process space for achieving lattice-matched compositions to GaN are fully mapped. Lattice-matched compositions are demonstrated to have the narrowest off-axis rocking curve widths ever reported for an epitaxial oxide deposited directly on GaN (0.7° in φ-circle for 200 reflection). Epitaxial deposition of the ferroelectric (Ba,Sr)TiO3 by hot RF sputtering on GaN surfaces is also demonstrated. Simple MOS capacitors are fabricated from epitaxial rocksalt oxides and (Ba,Sr)TiO3 layers deposited on n-GaN substrates. Current-voltage measurements reveal that BST epilayers have 5 orders of magnitude higher current leakage than rocksalt epilayers. This higher leakage is attributed to the smaller band offset expected at this interface; modeling confirms that electronic transport occurs by Schottky emission. In contrast, current transport across the rocksalt oxide/GaN interface occurs by Frenkel-Poole emission and can be reduced with pre-deposition surface treatments. Finally, through this work, it is realized that the integration of oxides with III-nitrides requires an appreciation of many different fields of research including materials science, surface science, and electrical engineering. By recognizing the importance that each of these fields play in designing oxide/III-nitride interfaces, this thesis has the opportunity to explore other related phenomena including accessing metastable phases through MBE (ytterbium monoxide), spinodal decomposition in metastable alloys (MCO), how polar surfaces grown by MBE compensate their bound surface charge, room temperature epitaxy, and the use of surface modification to achieve selective epitaxial deposition (SeEDed growth).

Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth

DOEpatents

Forrest, Stephen R; Zimmerman, Jeramy; Lee, Kyusang; Shiu, Kuen-Ting

2015-01-06

There is disclosed methods of making photosensitive devices, such as flexible photovoltaic (PV) devices, through the use of epitaxial liftoff. Also described herein are methods of preparing flexible PV devices comprising a structure having a growth substrate, wherein the selective etching of protective layers yields a smooth growth substrate that us suitable for reuse.

Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth

DOEpatents

Forrest, Stephen R; Zimmerman, Jeramy; Lee, Kyusang; Shiu, Kuen-Ting

2013-02-19

There is disclosed methods of making photosensitive devices, such as flexible photovoltaic (PV) devices, through the use of epitaxial liftoff. Also described herein are methods of preparing flexible PV devices comprising a structure having a growth substrate, wherein the selective etching of protective layers yields a smooth growth substrate that us suitable for reuse.

Argon–germane in situ plasma clean for reduced temperature Ge on Si epitaxy by high density plasma chemical vapor deposition

DOE PAGES

Douglas, Erica A.; Sheng, Josephine J.; Verley, Jason C.; ...

2015-06-04

We found that the demand for integration of near infrared optoelectronic functionality with silicon complementary metal oxide semiconductor (CMOS) technology has for many years motivated the investigation of low temperature germanium on silicon deposition processes. Our work describes the development of a high density plasma chemical vapor deposition process that uses a low temperature (<460 °C) in situ germane/argon plasma surface preparation step for epitaxial growth of germanium on silicon. It is shown that the germane/argon plasma treatment sufficiently removes SiO x and carbon at the surface to enable germanium epitaxy. Finally, the use of this surface preparation step demonstratesmore » an alternative way to produce germanium epitaxy at reduced temperatures, a key enabler for increased flexibility of integration with CMOS back-end-of-line fabrication.« less

Low temperature plasma enhanced CVD epitaxial growth of silicon on GaAs: a new paradigm for III-V/Si integration

NASA Astrophysics Data System (ADS)

Cariou, Romain; Chen, Wanghua; Maurice, Jean-Luc; Yu, Jingwen; Patriarche, Gilles; Mauguin, Olivia; Largeau, Ludovic; Decobert, Jean; Roca I Cabarrocas, Pere

2016-05-01

The integration of III-V semiconductors with silicon is a key issue for photonics, microelectronics and photovoltaics. With the standard approach, namely the epitaxial growth of III-V on silicon, thick and complex buffer layers are required to limit the crystalline defects caused by the interface polarity issues, the thermal expansion, and lattice mismatches. To overcome these problems, we have developed a reverse and innovative approach to combine III-V and silicon: the straightforward epitaxial growth of silicon on GaAs at low temperature by plasma enhanced CVD (PECVD). Indeed we show that both GaAs surface cleaning by SiF4 plasma and subsequent epitaxial growth from SiH4/H2 precursors can be achieved at 175 °C. The GaAs native oxide etching is monitored with in-situ spectroscopic ellipsometry and Raman spectroscopy is used to assess the epitaxial silicon quality. We found that SiH4 dilution in hydrogen during deposition controls the layer structure: the epitaxial growth happens for deposition conditions at the transition between the microcrystalline and amorphous growth regimes. SIMS and STEM-HAADF bring evidences for the interface chemical sharpness. Together, TEM and XRD analysis demonstrate that PECVD enables the growth of high quality relaxed single crystal silicon on GaAs.

Top-gate dielectric induced doping and scattering of charge carriers in epitaxial graphene

NASA Astrophysics Data System (ADS)

Puls, Conor P.; Staley, Neal E.; Moon, Jeong-Sun; Robinson, Joshua A.; Campbell, Paul M.; Tedesco, Joseph L.; Myers-Ward, Rachael L.; Eddy, Charles R.; Gaskill, D. Kurt; Liu, Ying

2011-07-01

We show that an e-gun deposited dielectric impose severe limits on epitaxial graphene-based device performance based on Raman spectroscopy and low-temperature transport measurements. Specifically, we show from studies of epitaxial graphene Hall bars covered by SiO2 that the measured carrier density is strongly inhomogenous and predominantly induced by charged impurities at the grapheme/dielectric interface that limit mobility via Coulomb interactions. Our work emphasizes that material integration of epitaxial graphene and a gate dielectric is the next major road block towards the realization of graphene-based electronics.

Improved process for epitaxial deposition of silicon on prediffused substrates

NASA Technical Reports Server (NTRS)

Clarke, M. G.; Halsor, J. L.; Word, J. C.

1968-01-01

Process for fabricating integrated circuits uniformly deposits silicon epitaxially on prediffused substrates without affecting the sublayer diffusion pattern. Two silicon deposits from different sources, and deposited at different temperatures, protect the sublayer pattern from the silicon tetrachloride reaction.

Facet-Selective Epitaxy of Compound Semiconductors on Faceted Silicon Nanowires.

PubMed

Mankin, Max N; Day, Robert W; Gao, Ruixuan; No, You-Shin; Kim, Sun-Kyung; McClelland, Arthur A; Bell, David C; Park, Hong-Gyu; Lieber, Charles M

2015-07-08

Integration of compound semiconductors with silicon (Si) has been a long-standing goal for the semiconductor industry, as direct band gap compound semiconductors offer, for example, attractive photonic properties not possible with Si devices. However, mismatches in lattice constant, thermal expansion coefficient, and polarity between Si and compound semiconductors render growth of epitaxial heterostructures challenging. Nanowires (NWs) are a promising platform for the integration of Si and compound semiconductors since their limited surface area can alleviate such material mismatch issues. Here, we demonstrate facet-selective growth of cadmium sulfide (CdS) on Si NWs. Aberration-corrected transmission electron microscopy analysis shows that crystalline CdS is grown epitaxially on the {111} and {110} surface facets of the Si NWs but that the Si{113} facets remain bare. Further analysis of CdS on Si NWs grown at higher deposition rates to yield a conformal shell reveals a thin oxide layer on the Si{113} facet. This observation and control experiments suggest that facet-selective growth is enabled by the formation of an oxide, which prevents subsequent shell growth on the Si{113} NW facets. Further studies of facet-selective epitaxial growth of CdS shells on micro-to-mesoscale wires, which allows tuning of the lateral width of the compound semiconductor layer without lithographic patterning, and InP shell growth on Si NWs demonstrate the generality of our growth technique. In addition, photoluminescence imaging and spectroscopy show that the epitaxial shells display strong and clean band edge emission, confirming their high photonic quality, and thus suggesting that facet-selective epitaxy on NW substrates represents a promising route to integration of compound semiconductors on Si.

Optical effects induced by epitaxial tension in lead titanate

NASA Astrophysics Data System (ADS)

Dejneka, A.; Chvostova, D.; Pacherova, O.; Kocourek, T.; Jelinek, M.; Tyunina, M.

2018-01-01

Single-crystal-type epitaxial films of perovskite oxide ferroelectrics are attractive for integrated photonic applications because of the remarkable optical properties and effects in ferroelectrics. The properties of the films may be influenced by epitaxial strain arising from the film-substrate mismatch. Here, dramatic strain-induced changes of the absorption and refraction are experimentally detected by spectroscopic ellipsometry in epitaxial films of archetypical ferroelectric PbTiO3. Comparison of the properties of a tensile-strained film with those of reference films and crystals reveals that epitaxial tension produces blueshifts of the primary above-bandgap absorption peaks by 1 eV and a decrease in the refractive index by 0.5 in the transparent spectral range. The obtained quadratic electrooptic and effective elastooptic coefficients exceed the bulk values by orders of magnitude. The experimental observations prove that epitaxy is a powerful tool for engineering unprecedented optical properties that may enable future photonics innovations.

Self-catalyzed GaAs nanowires on silicon by hydride vapor phase epitaxy.

PubMed

Dong, Zhenning; André, Yamina; Dubrovskii, Vladimir G; Bougerol, Catherine; Leroux, Christine; Ramdani, Mohammed R; Monier, Guillaume; Trassoudaine, Agnès; Castelluci, Dominique; Gil, Evelyne

2017-03-24

Gold-free GaAs nanowires on silicon substrates can pave the way for monolithic integration of photonic nanodevices with silicon electronic platforms. It is extensively documented that the self-catalyzed approach works well in molecular beam epitaxy but is much more difficult to implement in vapor phase epitaxies. Here, we report the first gallium-catalyzed hydride vapor phase epitaxy growth of long (more than 10 μm) GaAs nanowires on Si(111) substrates with a high integrated growth rate up to 60 μm h -1 and pure zincblende crystal structure. The growth is achieved by combining a low temperature of 600 °C with high gaseous GaCl/As flow ratios to enable dechlorination and formation of gallium droplets. GaAs nanowires exhibit an interesting bottle-like shape with strongly tapered bases, followed by straight tops with radii as small as 5 nm. We present a model that explains the peculiar growth mechanism in which the gallium droplets nucleate and rapidly swell on the silicon surface but then are gradually consumed to reach a stationary size. Our results unravel the necessary conditions for obtaining gallium-catalyzed GaAs nanowires by vapor phase epitaxy techniques.

Heterogeneous Integration of Epitaxial Ge on Si using AlAs/GaAs Buffer Architecture: Suitability for Low-power Fin Field-Effect Transistors

PubMed Central

Hudait, Mantu K.; Clavel, Michael; Goley, Patrick; Jain, Nikhil; Zhu, Yan

2014-01-01

Germanium-based materials and device architectures have recently appeared as exciting material systems for future low-power nanoscale transistors and photonic devices. Heterogeneous integration of germanium (Ge)-based materials on silicon (Si) using large bandgap buffer architectures could enable the monolithic integration of electronics and photonics. In this paper, we report on the heterogeneous integration of device-quality epitaxial Ge on Si using composite AlAs/GaAs large bandgap buffer, grown by molecular beam epitaxy that is suitable for fabricating low-power fin field-effect transistors required for continuing transistor miniaturization. The superior structural quality of the integrated Ge on Si using AlAs/GaAs was demonstrated using high-resolution x-ray diffraction analysis. High-resolution transmission electron microscopy confirmed relaxed Ge with high crystalline quality and a sharp Ge/AlAs heterointerface. X-ray photoelectron spectroscopy demonstrated a large valence band offset at the Ge/AlAs interface, as compared to Ge/GaAs heterostructure, which is a prerequisite for superior carrier confinement. The temperature-dependent electrical transport properties of the n-type Ge layer demonstrated a Hall mobility of 370 cm2/Vs at 290 K and 457 cm2/Vs at 90 K, which suggests epitaxial Ge grown on Si using an AlAs/GaAs buffer architecture would be a promising candidate for next-generation high-performance and energy-efficient fin field-effect transistor applications. PMID:25376723

Fermi level pinning at epitaxial Si on GaAs(100) interfaces

NASA Astrophysics Data System (ADS)

Silberman, J. A.; de Lyon, T. J.; Woodall, J. M.

1991-12-01

GaAs Schottky barrier contacts and metal-insulator-semiconductor structures that include thin epitaxial Si interfacial layers operate in a manner consistent with an unpinned Fermi level at the GaAs interface. These findings raise the question of whether this effect is an intrinsic property of the epitaxial GaAs(100)-Si interface. We have used x-ray photoemission spectroscopy to monitor the Fermi level position during in situ growth of thin epitaxial Si layers. In particular, films formed on heavily doped n- and p-type substrates were compared so as to use the large depletion layer fields available with high impurity concentration as a field-effect probe of the interface state density. The results demonstrate that epitaxial bonding at the interface alone is insufficient to eliminate Fermi level pinning, indicating that other mechanisms affect the interfacial charge balance in the devices that utilize Si interlayers.

One-step Ge/Si epitaxial growth.

PubMed

Wu, Hung-Chi; Lin, Bi-Hsuan; Chen, Huang-Chin; Chen, Po-Chin; Sheu, Hwo-Shuenn; Lin, I-Nan; Chiu, Hsin-Tien; Lee, Chi-Young

2011-07-01

Fabricating a low-cost virtual germanium (Ge) template by epitaxial growth of Ge films on silicon wafer with a Ge(x)Si(1-x) (0 < x < 1) graded buffer layer was demonstrated through a facile chemical vapor deposition method in one step by decomposing a hazardousless GeO(2) powder under hydrogen atmosphere without ultra-high vacuum condition and then depositing in a low-temperature region. X-ray diffraction analysis shows that the Ge film with an epitaxial relationship is along the in-plane direction of Si. The successful growth of epitaxial Ge films on Si substrate demonstrates the feasibility of integrating various functional devices on the Ge/Si substrates.

Ferroelectricity in epitaxial Y-doped HfO2 thin film integrated on Si substrate

NASA Astrophysics Data System (ADS)

Lee, K.; Lee, T. Y.; Yang, S. M.; Lee, D. H.; Park, J.; Chae, S. C.

2018-05-01

We report on the ferroelectricity of a Y-doped HfO2 thin film epitaxially grown on Si substrate, with an yttria-stabilized zirconia buffer layer pre-deposited on the substrate. Piezoresponse force microscopy results show the ferroelectric domain pattern, implying the existence of ferroelectricity in the epitaxial HfO2 film. The epitaxially stabilized HfO2 film in the form of a metal-ferroelectric-insulator-semiconductor structure exhibits ferroelectric hysteresis with a clear ferroelectric switching current in polarization-voltage measurements. The HfO2 thin film also demonstrates ferroelectric retention comparable to that of current perovskite-based metal-ferroelectric-insulator-semiconductor structures.

Vertical and lateral heterogeneous integration

NASA Astrophysics Data System (ADS)

Geske, Jon; Okuno, Yae L.; Bowers, John E.; Jayaraman, Vijay

2001-09-01

A technique for achieving large-scale monolithic integration of lattice-mismatched materials in the vertical direction and the lateral integration of dissimilar lattice-matched structures has been developed. The technique uses a single nonplanar direct-wafer-bond step to transform vertically integrated epitaxial structures into lateral epitaxial variation across the surface of a wafer. Nonplanar wafer bonding is demonstrated by integrating four different unstrained multi-quantum-well active regions lattice matched to InP on a GaAs wafer surface. Microscopy is used to verify the quality of the bonded interface, and photoluminescence is used to verify that the bonding process does not degrade the optical quality of the laterally integrated wells. The authors propose this technique as a means to achieve greater levels of wafer-scale integration in optical, electrical, and micromechanical devices.

Ultra-high strain in epitaxial silicon carbide nanostructures utilizing residual stress amplification

NASA Astrophysics Data System (ADS)

Phan, Hoang-Phuong; Nguyen, Tuan-Khoa; Dinh, Toan; Ina, Ginnosuke; Kermany, Atieh Ranjbar; Qamar, Afzaal; Han, Jisheng; Namazu, Takahiro; Maeda, Ryutaro; Dao, Dzung Viet; Nguyen, Nam-Trung

2017-04-01

Strain engineering has attracted great attention, particularly for epitaxial films grown on a different substrate. Residual strains of SiC have been widely employed to form ultra-high frequency and high Q factor resonators. However, to date, the highest residual strain of SiC was reported to be limited to approximately 0.6%. Large strains induced into SiC could lead to several interesting physical phenomena, as well as significant improvement of resonant frequencies. We report an unprecedented nanostrain-amplifier structure with an ultra-high residual strain up to 8% utilizing the natural residual stress between epitaxial 3C-SiC and Si. In addition, the applied strain can be tuned by changing the dimensions of the amplifier structure. The possibility of introducing such a controllable and ultra-high strain will open the door to investigating the physics of SiC in large strain regimes and the development of ultra sensitive mechanical sensors.

Optoelectronics Material Center: A Collaborative Program Including Center for High Technology Materials of the University of New Mexico, Stanford University, California Institute of Technology

DTIC Science & Technology

1992-09-01

SI by Ion-Assisted Molecular Beam Enltaxy Currently there is considerable interest in misfit accommodation in hetero- epitaxy for integration of device...of misfit accommodation. In the last quarter, we have demonstrated, using ion-assisted molecular beam epitaxy : * Reduction of dislocation density in... beam epitaxy (MOMBE) hardware, and demonstration of state-of-the-art MOMBE AlGaAs (1990). MOCVD Materials Growth Facilities and Eauipment Extension to

Reducing dislocations in semiconductors utilizing repeated thermal cycling during multistage epitaxial growth

DOEpatents

Fan, John C. C.; Tsaur, Bor-Yeu; Gale, Ronald P.; Davis, Frances M.

1992-02-25

Dislocation densities are reduced in growing semiconductors from the vapor phase by employing a technique of interrupting growth, cooling the layer so far deposited, and then repeating the process until a high quality active top layer is achieved. The method of interrupted growth, coupled with thermal cycling, permits dislocations to be trapped in the initial stages of epitaxial growth.

Reducing dislocations in semiconductors utilizing repeated thermal cycling during multistage epitaxial growth

DOEpatents

Fan, John C. C.; Tsaur, Bor-Yeu; Gale, Ronald P.; Davis, Frances M.

1986-12-30

Dislocation densities are reduced in growing semiconductors from the vapor phase by employing a technique of interrupting growth, cooling the layer so far deposited, and then repeating the process until a high quality active top layer is achieved. The method of interrupted growth, coupled with thermal cycling, permits dislocations to be trapped in the initial stages of epitaxial growth.

Process for forming epitaxial perovskite thin film layers using halide precursors

DOEpatents

Clem, Paul G.; Rodriguez, Mark A.; Voigt, James A.; Ashley, Carol S.

2001-01-01

A process for forming an epitaxial perovskite-phase thin film on a substrate. This thin film can act as a buffer layer between a Ni substrate and a YBa.sub.2 Cu.sub.3 O.sub.7-x superconductor layer. The process utilizes alkali or alkaline metal acetates dissolved in halogenated organic acid along with titanium isopropoxide to dip or spin-coat the substrate which is then heated to about 700.degree. C. in an inert gas atmosphere to form the epitaxial film on the substrate. The YBCO superconductor can then be deposited on the layer formed by this invention.

Ultrathin Lutetium Oxide Film as an Epitaxial Hole-Blocking Layer for Crystalline Bismuth Vanadate Water Splitting Photoanodes

DOE PAGES

Zhang, Wenrui; Yan, Danhua; Tong, Xiao; ...

2018-01-08

Here a novel ultrathin lutetium oxide (Lu 2O 3) interlayer is integrated with crystalline bismuth vanadate (BiVO4) thin film photoanodes to facilitate carrier transport through atomic-scale interface control. The epitaxial Lu 2O 32O 3

Trends in heteroepitaxy of III-Vs on silicon for photonic and photovoltaic applications

NASA Astrophysics Data System (ADS)

Lourdudoss, Sebastian; Junesand, Carl; Kataria, Himanshu; Metaferia, Wondwosen; Omanakuttan, Giriprasanth; Sun, Yan-Ting; Wang, Zhechao; Olsson, Fredrik

2017-02-01

We present and compare the existing methods of heteroepitaxy of III-Vs on silicon and their trends. We focus on the epitaxial lateral overgrowth (ELOG) method as a means of achieving good quality III-Vs on silicon. Initially conducted primarily by near-equilibrium epitaxial methods such as liquid phase epitaxy and hydride vapour phase epitaxy, nowadays ELOG is being carried out even by non-equilibrium methods such as metal organic vapour phase epitaxy. In the ELOG method, the intermediate defective seed and the mask layers still exist between the laterally grown purer III-V layer and silicon. In a modified ELOG method called corrugated epitaxial lateral overgrowth (CELOG) method, it is possible to obtain direct interface between the III-V layer and silicon. In this presentation we exemplify some recent results obtained by these techniques. We assess the potentials of these methods along with the other existing methods for realizing truly monolithic photonic integration on silicon and III-V/Si heterojunction solar cells.

Lead-free epitaxial ferroelectric material integration on semiconducting (100) Nb-doped SrTiO3 for low-power non-volatile memory and efficient ultraviolet ray detection

PubMed Central

Kundu, Souvik; Clavel, Michael; Biswas, Pranab; Chen, Bo; Song, Hyun-Cheol; Kumar, Prashant; Halder, Nripendra N.; Hudait, Mantu K.; Banerji, Pallab; Sanghadasa, Mohan; Priya, Shashank

2015-01-01

We report lead-free ferroelectric based resistive switching non-volatile memory (NVM) devices with epitaxial (1-x)BaTiO3-xBiFeO3 (x = 0.725) (BT-BFO) film integrated on semiconducting (100) Nb (0.7%) doped SrTiO3 (Nb:STO) substrates. The piezoelectric force microscopy (PFM) measurement at room temperature demonstrated ferroelectricity in the BT-BFO thin film. PFM results also reveal the repeatable polarization inversion by poling, manifesting its potential for read-write operation in NVM devices. The electroforming-free and ferroelectric polarization coupled electrical behaviour demonstrated excellent resistive switching with high retention time, cyclic endurance, and low set/reset voltages. X-ray photoelectron spectroscopy was utilized to determine the band alignment at the BT-BFO and Nb:STO heterojunction, and it exhibited staggered band alignment. This heterojunction is found to behave as an efficient ultraviolet photo-detector with low rise and fall time. The architecture also demonstrates half-wave rectification under low and high input signal frequencies, where the output distortion is minimal. The results provide avenue for an electrical switch that can regulate the pixels in low or high frequency images. Combined this work paves the pathway towards designing future generation low-power ferroelectric based microelectronic devices by merging both electrical and photovoltaic properties of BT-BFO materials. PMID:26202946

Lead-free epitaxial ferroelectric material integration on semiconducting (100) Nb-doped SrTiO3 for low-power non-volatile memory and efficient ultraviolet ray detection.

PubMed

Kundu, Souvik; Clavel, Michael; Biswas, Pranab; Chen, Bo; Song, Hyun-Cheol; Kumar, Prashant; Halder, Nripendra N; Hudait, Mantu K; Banerji, Pallab; Sanghadasa, Mohan; Priya, Shashank

2015-07-23

We report lead-free ferroelectric based resistive switching non-volatile memory (NVM) devices with epitaxial (1-x)BaTiO3-xBiFeO3 (x = 0.725) (BT-BFO) film integrated on semiconducting (100) Nb (0.7%) doped SrTiO3 (Nb:STO) substrates. The piezoelectric force microscopy (PFM) measurement at room temperature demonstrated ferroelectricity in the BT-BFO thin film. PFM results also reveal the repeatable polarization inversion by poling, manifesting its potential for read-write operation in NVM devices. The electroforming-free and ferroelectric polarization coupled electrical behaviour demonstrated excellent resistive switching with high retention time, cyclic endurance, and low set/reset voltages. X-ray photoelectron spectroscopy was utilized to determine the band alignment at the BT-BFO and Nb:STO heterojunction, and it exhibited staggered band alignment. This heterojunction is found to behave as an efficient ultraviolet photo-detector with low rise and fall time. The architecture also demonstrates half-wave rectification under low and high input signal frequencies, where the output distortion is minimal. The results provide avenue for an electrical switch that can regulate the pixels in low or high frequency images. Combined this work paves the pathway towards designing future generation low-power ferroelectric based microelectronic devices by merging both electrical and photovoltaic properties of BT-BFO materials.

Single Crystal Faceplate Evaluation

DTIC Science & Technology

1993-10-25

conventional powder phosphor. The utility of garnets is amplified by the high state of the art of liquid phase epitaxy ( LPE ). Liquid phase epitaxy of...7]. Much the research at Allied-Signal, Inc. in garnet layer growth has been involved with the kinetics of crystallization of garnet from LPE melts...acceptable resolution and light output characteristics. Single crystal faceplates being evaluated are composed of yttrium aluminum garnet (YAG) with an

Superconductivity and tunneling-junctions in epitaxial Nb2N/AlN/GaN heterojunctions

NASA Astrophysics Data System (ADS)

Yan, Rusen; Han, Yimo; Khalsa, Guru; Vishwanath, Suresh; Katzer, Scott; Nepal, Neeraj; Downey, Brian; Muller, David; Meyer, David; Xing, Grace; Jena, Debdeep; ECE Collaboration; AEP Collaboration; MSE Collaboration; NRL Collaboration

We have discovered that ultrathin highly crystalline Nb2N layers grown epitaxially (by MBE) on SiC and integrated with AlN and GaN heterostructures are high-quality superconductors with transition temperatures from 9-13 K. The out-of-plane critical magnetic fields are found to be 14 Tesla range, and the critical current density is 4*1E5 A/cm2 at 5 K. Preliminary in-plane magnetotransport measurements on 4 nm thin films indicate a significantly high critical magnetic field exceeding 40 T. Since Nb2N superconducting layers can be epitaxially integrated with GaN, AlN, and AlGaN, we also demonstrate Nb2N superconductivity in a layer located beneath an N-polar GaN high-electron-mobility transistor (HEMT) heterostructure that uses a 2DEG channel as a microwave amplifier; such a demonstration illustrates the potential emergence of a new paradigm where an all-epitaxial III-N/Nb2N platform could serve as the basis for microwave qubits to power quantum computation as well as quantum communications.

Formation of Monocrystalline 1D and 2D Architectures via Epitaxial Attachment: Bottom-Up Routes through Surfactant-Mediated Arrays of Oriented Nanocrystals.

PubMed

Nakagawa, Yoshitaka; Kageyama, Hiroyuki; Oaki, Yuya; Imai, Hiroaki

2015-06-09

Monocrystalline architectures with well-defined shapes were achieved by bottom-up routes through epitaxial attachment of Mn3O4 nanocrystals. The crystallographically continuous 1D chains elongated in the a axis and 2D panels having large a or c faces were obtained by removal of the organic mediator from surfactant-mediated 1D and 2D arrays of Mn3O4 nanocrystals, respectively. Our basal approach indicates that the epitaxial attachment through the surfactant-mediated arrays is utilized for fabrication of a wide variety of micrometric architectures from nanometric crystalline units.

Use of space ultra-vacuum for high quality semiconductor thin film growth

NASA Technical Reports Server (NTRS)

Ignatiev, A.; Sterling, M.; Sega, R. M.

1992-01-01

The utilization of space for materials processing is being expanded through a unique concept of epitaxial thin film growth in the ultra-vacuum of low earth orbit (LEO). This condition can be created in the wake of an orbiting space vehicle; and assuming that the vehicle itself does not pertub the environment, vacuum levels of better than 10 exp -14 torr can be attained. This vacuum environment has the capacity of greatly enhancing epitaxial thin film growth and will be the focus of experiments conducted aboard the Wake Shield Facility (WSF) currently being developed by the Space Vacuum Epitaxy Center (SVEC), Industry, and NASA.

Multifunctional epitaxial systems on silicon substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singamaneni, Srinivasa Rao, E-mail: ssingam@ncsu.edu; Materials Science Division, Army Research Office, Research Triangle Park, North Carolina 27709; Department of Physics, The University of Texas at El Paso, El Paso, Texas 79968

2016-09-15

Multifunctional heterostructures can exhibit a wide range of functional properties, including colossal magneto-resistance, magnetocaloric, and multiferroic behavior, and can display interesting physical phenomena including spin and charge ordering and strong spin-orbit coupling. However, putting this functionality to work remains a challenge. To date, most of the work reported in the literature has dealt with heterostructures deposited onto closely lattice matched insulating substrates such as DyScO{sub 3}, SrTiO{sub 3} (STO), or STO buffered Si(100) using concepts of lattice matching epitaxy (LME). However, strain in heterostructures grown by LME is typically not fully relaxed and the layers contain detrimental defects such asmore » threading dislocations that can significantly degrade the physical properties of the films and adversely affect the device characteristics. In addition, most of the substrates are incompatible with existing CMOS-based technology, where Si (100) substrates dominate. This review discusses recent advances in the integration of multifunctional oxide and non-oxide materials onto silicon substrates. An alternative thin film growth approach, called “domain matching epitaxy,” is presented which identifies approaches for minimizing lattice strain and unwanted defects in large misfit systems (7%–25% and higher). This approach broadly allows for the integration of multifunctional materials onto silicon substrates, such that sensing, computation, and response functions can be combined to produce next generation “smart” devices. In general, pulsed laser deposition has been used to epitaxially grow these materials, although the concepts developed here can be extended to other deposition techniques, as well. It will be shown that TiN and yttria-stabilized zirconia template layers provide promising platforms for the integration of new functionality into silicon-based computer chips. This review paper reports on a number of thin-film heterostructure systems that span a variety of ferroelectric, multiferroic, magnetic, photocatalytic, and smart materials. Their properties have been extensively investigated and their functionality found to be comparable to films grown on single-crystal oxide substrates previously reported by researchers in this field. In addition, this review explores the utility of using laser processing to introduce stable defects in a controlled way and induce magnetism and engineer the optical and electrical properties of nonmagnetic oxides such as BaTiO{sub 3}, VO{sub 2}, NiO, and TiO{sub 2} as an alternative for incorporating additional magnetic and conducting layers into the structure. These significant materials advancements herald a flurry of exciting new advances in CMOS-compatible multifunctional devices.« less

Perspective: The future of quantum dot photonic integrated circuits

NASA Astrophysics Data System (ADS)

Norman, Justin C.; Jung, Daehwan; Wan, Yating; Bowers, John E.

2018-03-01

Direct epitaxial integration of III-V materials on Si offers substantial manufacturing cost and scalability advantages over heterogeneous integration. The challenge is that epitaxial growth introduces high densities of crystalline defects that limit device performance and lifetime. Quantum dot lasers, amplifiers, modulators, and photodetectors epitaxially grown on Si are showing promise for achieving low-cost, scalable integration with silicon photonics. The unique electrical confinement properties of quantum dots provide reduced sensitivity to the crystalline defects that result from III-V/Si growth, while their unique gain dynamics show promise for improved performance and new functionalities relative to their quantum well counterparts in many devices. Clear advantages for using quantum dot active layers for lasers and amplifiers on and off Si have already been demonstrated, and results for quantum dot based photodetectors and modulators look promising. Laser performance on Si is improving rapidly with continuous-wave threshold currents below 1 mA, injection efficiencies of 87%, and output powers of 175 mW at 20 °C. 1500-h reliability tests at 35 °C showed an extrapolated mean-time-to-failure of more than ten million hours. This represents a significant stride toward efficient, scalable, and reliable III-V lasers on on-axis Si substrates for photonic integrate circuits that are fully compatible with complementary metal-oxide-semiconductor (CMOS) foundries.

Semiconductor to Metal Transition Characteristics of VO2/NiO Epitaxial Heterostructures Integrated with Si(100)

NASA Astrophysics Data System (ADS)

Molaei, Roya

The novel functionalities of Vanadium dioxide (VO2), such as, several orders of magnitude transition in resistivity and IR transmittance, provide the exciting opportunity for the development of next generation memory, sensor, and field-effect based devices. A critical issue in the development of practical devices based on metal oxides is the integration of high quality epitaxial oxide thin films with the existing silicon technology which is based on silicon (100) substrates. However, silicon is not suitable for epitaxial growth of oxides owing to its tendency to readily form an amorphous oxide layer or silicide at the film-substrate interface. The oxide films deposited directly on silicon exhibit poor crystallinity and are not suitable for device applications. To overcome this challenge, appropriate substrate templates must be developed for the growth of oxide thin films on silicon substrates. The primary objective of this dissertation was to develop an integration methodology of VO2 with Si (100) substrates so they could be used in "smart" sensor type of devices along with other multifunctional devices on the same silicon chip. This was achieved by using a NiO/c- YSZ template layer deposited in situ. It will be shown that if the deposition conditions are controlled properly. This approach was used to integrate VO 2 thin films with Si (100) substrates using pulsed laser deposition (PLD) technique. The deposition methodology of integrating VO2 thin films on silicon using various other template layers will also be discussed. Detailed epitaxial relationship of NiO/c-YSZ/Si(100) heterostructures as a template to growth of VO2 as well as were studied. We also were able to create a p-n junction within a single NiO epilayer through subsequent nanosecond laser annealing, as well as established a structure-property correlation in NiO/c-YSZ/Si(100) thin film epitaxial heterostructures with especial emphasis on the stoichiometry and crystallographic characteristics. NiO/c-YSZ/Si(100) heterostructures were used as template to grow fully relaxed VO2 thin films. The detailed x-ray diffraction, transmission electron microscopy (TEM), electrical characterization results for the deposited films will be presented. In the framework on domain matching epitaxy, epitaxial growth of VO2 (tetragonal crystal structure at growth temperature) on NiO has been explained. Our detailed phi-scan X-ray diffraction measurements corroborate our understanding of the epitaxial growth and in-plane atomic arrangements at the interface. It was observed that the transition characteristics (sharpness, over which electrical property changes are completed, amplitude, transition temperature, and hysteresis) are a strong function of microstructure, strain, and stoichiometry. We have shown that by the choosing the right template layer, strain in the VO2 thin films can be fully relaxed and near-bulk VO2 transition temperatures can be achieved. Finally, I will present my research work on modification of semiconductor-to-metal transition characteristics and effect on room temperature magnetic properties of VO2 thin films upon laser annealing. While the microstructure (epitaxy, crystalline quality etc.) and phase were preserved, we envisage these changes to occur as a result of introduction of oxygen vacancies upon laser treatment.

Integration of (208) oriented epitaxial Hf-doped Bi4Ti3O12 with (0002) GaN using SrTiO3/TiO2 buffer layer

NASA Astrophysics Data System (ADS)

Luo, W. B.; Zhu, J.; Li, Y. R.; Wang, X. P.; Zhang, Y.

2009-05-01

Hf-doped Bi4Ti3O12 (BTH) ferroelectric films with excellent electrical properties were epitaxially integrated with GaN semiconductor using (111) SrTiO3 (STO)/rutile (200) TiO2 as buffer layer. The STO/TiO2 buffer layer was deposited by laser molecular beam epitaxy. The structural characteristics of the buffer layer were in situ and ex situ characterized by reflective high energy electron diffraction, x-ray diffraction (XRD), and high resolution transmission microscopy. The overlaying SrRuO3 (SRO) and BTH films were then deposited by pulsed laser deposition. XRD spectra, including θ-2θ and Φ scans, show that the (208) BTH films were epitaxially grown on GaN, and the BTH films inherit the in-plane twin-domain of STO buffer layer. Electrical measurements demonstrate that the non-c axis BTH films possess a large remnant polarization (2Pr=45 μC/cm2), excellent fatigue endurance (10.2% degradation after 1.1×1010 switching cycles), and a low leakage current density (1.94×10-7 A/cm2 at an electric field of 200 kV/cm). These results reveal that the (208) BTH films with favorable electrical performance could be epitaxially grown on GaN template using STO/TiO2 buffer layer.

A review of molecular beam epitaxy of ferroelectric BaTiO3 films on Si, Ge and GaAs substrates and their applications

PubMed Central

Mazet, Lucie; Yang, Sang Mo; Kalinin, Sergei V; Schamm-Chardon, Sylvie; Dubourdieu, Catherine

2015-01-01

SrTiO3 epitaxial growth by molecular beam epitaxy (MBE) on silicon has opened up the route to the monolithic integration of various complex oxides on the complementary metal-oxide–semiconductor silicon platform. Among functional oxides, ferroelectric perovskite oxides offer promising perspectives to improve or add functionalities on-chip. We review the growth by MBE of the ferroelectric compound BaTiO3 on silicon (Si), germanium (Ge) and gallium arsenide (GaAs) and we discuss the film properties in terms of crystalline structure, microstructure and ferroelectricity. Finally, we review the last developments in two areas of interest for the applications of BaTiO3 films on silicon, namely integrated photonics, which benefits from the large Pockels effect of BaTiO3, and low power logic devices, which may benefit from the negative capacitance of the ferroelectric. PMID:27877816

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kang, Dongseok; Young, James L.; Lim, Haneol

Despite their excellent photophysical properties and record-high solar-to-hydrogen conversion efficiency, the high cost and limited stability of III-V compound semiconductors prohibit their practical application in solar-driven photoelectrochemical water splitting. Here in this paper we present a strategy for III-V photocatalysis that can circumvent these difficulties via printed assemblies of epitaxially grown compound semiconductors. A thin film stack of GaAs-based epitaxial materials is released from the growth wafer and printed onto a non-native transparent substrate to form an integrated photocatalytic electrode for solar hydrogen generation. The heterogeneously integrated electrode configuration together with specialized epitaxial design serve to decouple the material interfacesmore » for illumination and electrocatalysis. Subsequently, this allows independent control and optimization of light absorption, carrier transport, charge transfer, and material stability. Using this approach, we construct a series-connected wireless tandem system of GaAs photoelectrodes and demonstrate 13.1% solar-to-hydrogen conversion efficiency of unassisted-mode water splitting.« less

Direct monolithic integration of vertical single crystalline octahedral molecular sieve nanowires on silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Carretero-Genevrier, Adrian; Oro-Sole, Judith; Gazquez, Jaume

2013-12-13

We developed an original strategy to produce vertical epitaxial single crystalline manganese oxide octahedral molecular sieve (OMS) nanowires with tunable pore sizes and compositions on silicon substrates by using a chemical solution deposition approach. The nanowire growth mechanism involves the use of track-etched nanoporous polymer templates combined with the controlled growth of quartz thin films at the silicon surface, which allowed OMS nanowires to stabilize and crystallize. α-quartz thin films were obtained after thermal activated crystallization of the native amorphous silica surface layer assisted by Sr 2+- or Ba 2+-mediated heterogeneous catalysis in the air at 800 °C. These α-quartzmore » thin films work as a selective template for the epitaxial growth of randomly oriented vertical OMS nanowires. Furthermore, the combination of soft chemistry and epitaxial growth opens new opportunities for the effective integration of novel technological functional tunneled complex oxides nanomaterials on Si substrates.« less

Manipulation of Dirac cones in intercalated epitaxial graphene

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Minsung; Tringides, Michael C.; Hershberger, Matthew T.

Graphene is an intriguing material in view of its unique Dirac quasi-particles, and the manipulation of its electronic structure is important in material design and applications. Here, we theoretically investigate the electronic band structure of epitaxial graphene on SiC with intercalation of rare earth metal ions (e.g., Yb and Dy) using first-principles calculations. We can use the intercalation to control the coupling of the constituent components (buffer layer, graphene, and substrate), resulting in strong modification of the graphene band structure. We also demonstrate that the metal-intercalated epitaxial graphene has tunable band structures by controlling the energies of Dirac cones asmore » well as the linear and quadratic band dispersion depending on the intercalation layer and density. Thus, the metal intercalation is a viable method to manipulate the electronic band structure of the epitaxial graphene, which can enhance the functional utility and controllability of the material.« less

Manipulation of Dirac cones in intercalated epitaxial graphene

DOE PAGES

Kim, Minsung; Tringides, Michael C.; Hershberger, Matthew T.; ...

2017-07-12

Graphene is an intriguing material in view of its unique Dirac quasi-particles, and the manipulation of its electronic structure is important in material design and applications. Here, we theoretically investigate the electronic band structure of epitaxial graphene on SiC with intercalation of rare earth metal ions (e.g., Yb and Dy) using first-principles calculations. We can use the intercalation to control the coupling of the constituent components (buffer layer, graphene, and substrate), resulting in strong modification of the graphene band structure. We also demonstrate that the metal-intercalated epitaxial graphene has tunable band structures by controlling the energies of Dirac cones asmore » well as the linear and quadratic band dispersion depending on the intercalation layer and density. Thus, the metal intercalation is a viable method to manipulate the electronic band structure of the epitaxial graphene, which can enhance the functional utility and controllability of the material.« less

Reduced-droop green III-nitride light-emitting diodes utilizing GaN tunnel junction

NASA Astrophysics Data System (ADS)

Alhassan, Abdullah I.; Young, Erin C.; Alyamani, Ahmed Y.; Albadri, Abdulrahman; Nakamura, Shuji; DenBaars, Steven P.; Speck, James S.

2018-04-01

We report the fabrication of low-droop high-efficiency green c-plane light-emitting diodes (LEDs) utilizing GaN tunnel junction (TJ) contacts. The LED epitaxial layers with a top p-GaN layer were grown by metal organic chemical vapor deposition and an n++-GaN layer was deposited by molecular beam epitaxy to form a TJ. The TJ LEDs were then compared with equivalent LEDs having a tin-doped indium oxide (ITO) contact. The TJ LEDs exhibited a higher performance and a lower efficiency droop than did the ITO LEDs. At 35 A/cm2, the external quantum efficiencies for the TJ and ITO LEDs were 31.2 and 27%, respectively.

GaN/NbN epitaxial semiconductor/superconductor heterostructures

NASA Astrophysics Data System (ADS)

Yan, Rusen; Khalsa, Guru; Vishwanath, Suresh; Han, Yimo; Wright, John; Rouvimov, Sergei; Katzer, D. Scott; Nepal, Neeraj; Downey, Brian P.; Muller, David A.; Xing, Huili G.; Meyer, David J.; Jena, Debdeep

2018-03-01

Epitaxy is a process by which a thin layer of one crystal is deposited in an ordered fashion onto a substrate crystal. The direct epitaxial growth of semiconductor heterostructures on top of crystalline superconductors has proved challenging. Here, however, we report the successful use of molecular beam epitaxy to grow and integrate niobium nitride (NbN)-based superconductors with the wide-bandgap family of semiconductors—silicon carbide, gallium nitride (GaN) and aluminium gallium nitride (AlGaN). We apply molecular beam epitaxy to grow an AlGaN/GaN quantum-well heterostructure directly on top of an ultrathin crystalline NbN superconductor. The resulting high-mobility, two-dimensional electron gas in the semiconductor exhibits quantum oscillations, and thus enables a semiconductor transistor—an electronic gain element—to be grown and fabricated directly on a crystalline superconductor. Using the epitaxial superconductor as the source load of the transistor, we observe in the transistor output characteristics a negative differential resistance—a feature often used in amplifiers and oscillators. Our demonstration of the direct epitaxial growth of high-quality semiconductor heterostructures and devices on crystalline nitride superconductors opens up the possibility of combining the macroscopic quantum effects of superconductors with the electronic, photonic and piezoelectric properties of the group III/nitride semiconductor family.

GaN/NbN epitaxial semiconductor/superconductor heterostructures.

PubMed

Yan, Rusen; Khalsa, Guru; Vishwanath, Suresh; Han, Yimo; Wright, John; Rouvimov, Sergei; Katzer, D Scott; Nepal, Neeraj; Downey, Brian P; Muller, David A; Xing, Huili G; Meyer, David J; Jena, Debdeep

2018-03-07

Epitaxy is a process by which a thin layer of one crystal is deposited in an ordered fashion onto a substrate crystal. The direct epitaxial growth of semiconductor heterostructures on top of crystalline superconductors has proved challenging. Here, however, we report the successful use of molecular beam epitaxy to grow and integrate niobium nitride (NbN)-based superconductors with the wide-bandgap family of semiconductors-silicon carbide, gallium nitride (GaN) and aluminium gallium nitride (AlGaN). We apply molecular beam epitaxy to grow an AlGaN/GaN quantum-well heterostructure directly on top of an ultrathin crystalline NbN superconductor. The resulting high-mobility, two-dimensional electron gas in the semiconductor exhibits quantum oscillations, and thus enables a semiconductor transistor-an electronic gain element-to be grown and fabricated directly on a crystalline superconductor. Using the epitaxial superconductor as the source load of the transistor, we observe in the transistor output characteristics a negative differential resistance-a feature often used in amplifiers and oscillators. Our demonstration of the direct epitaxial growth of high-quality semiconductor heterostructures and devices on crystalline nitride superconductors opens up the possibility of combining the macroscopic quantum effects of superconductors with the electronic, photonic and piezoelectric properties of the group III/nitride semiconductor family.

Metal organic chemical vapor deposition of 111-v compounds on silicon

DOEpatents

Vernon, Stanley M.

1986-01-01

Expitaxial composite comprising thin films of a Group III-V compound semiconductor such as gallium arsenide (GaAs) or gallium aluminum arsenide (GaAlAs) on single crystal silicon substrates are disclosed. Also disclosed is a process for manufacturing, by chemical deposition from the vapor phase, epitaxial composites as above described, and to semiconductor devices based on such epitaxial composites. The composites have particular utility for use in making light sensitive solid state solar cells.

Enhancement of ferroelectric Curie temperature in BaTiO3 films via strain-induced defect dipole alignment.

PubMed

Damodaran, Anoop R; Breckenfeld, Eric; Chen, Zuhuang; Lee, Sungki; Martin, Lane W

2014-09-01

The combination of epitaxial strain and defect engineering facilitates the tuning of the transition temperature of BaTiO3 to >800 °C. Advances in thin-film deposition enable the utilization of both the electric and elastic dipoles of defects to extend the epitaxial strain to new levels, inducing unprecedented functionality and temperature stability in ferroelectrics. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High-mobility BaSnO 3 grown by oxide molecular beam epitaxy

DOE PAGES

Raghavan, Santosh; Schumann, Timo; Kim, Honggyu; ...

2016-01-28

High-mobility perovskite BaSnO 3 films are of significant interest as newwide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites. Despite promising results for single crystals, high-mobility BaSnO 3 films have been challenging to grow. Here, we demonstrate a modified oxide molecular beam epitaxy (MBE) approach, which supplies pre-oxidized SnO x. This technique addresses issues in the MBE of ternary stannates related to volatile SnO formation and enables growth of epitaxial, stoichiometric BaSnO 3. We demonstrate room temperature electron mobilities of 150 cm 2 V -1 s -1 in films grownmore » on PrScO 3. Lastly, the results open up a wide range of opportunities for future electronic devices.« less

Positron lifetime beam for defect studies in thin epitaxial semiconductor structures

NASA Astrophysics Data System (ADS)

Laakso, A.; Saarinen, K.; Hautojärvi, P.

2001-12-01

Positron annihilation spectroscopies are methods for direct identification of vacancy-type defects by measuring positron lifetime and Doppler broadening of annihilation radiation and providing information about open volume, concentration and atoms surrounding the defect. Both these techniques are easily applied to bulk samples. Only the Doppler broadening spectroscopy can be employed in thin epitaxial samples by utilizing low-energy positron beams. Here we describe the positron lifetime beam which will provide us with a method to measure lifetime in thin semiconductor layers.

Template-assisted selective epitaxy of III–V nanoscale devices for co-planar heterogeneous integration with Si

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schmid, H., E-mail: sih@zurich.ibm.com; Borg, M.; Moselund, K.

2015-06-08

III–V nanoscale devices were monolithically integrated on silicon-on-insulator (SOI) substrates by template-assisted selective epitaxy (TASE) using metal organic chemical vapor deposition. Single crystal III–V (InAs, InGaAs, GaAs) nanostructures, such as nanowires, nanostructures containing constrictions, and cross junctions, as well as 3D stacked nanowires were directly obtained by epitaxial filling of lithographically defined oxide templates. The benefit of TASE is exemplified by the straightforward fabrication of nanoscale Hall structures as well as multiple gate field effect transistors (MuG-FETs) grown co-planar to the SOI layer. Hall measurements on InAs nanowire cross junctions revealed an electron mobility of 5400 cm{sup 2}/V s, while the alongsidemore » fabricated InAs MuG-FETs with ten 55 nm wide, 23 nm thick, and 390 nm long channels exhibit an on current of 660 μA/μm and a peak transconductance of 1.0 mS/μm at V{sub DS} = 0.5 V. These results demonstrate TASE as a promising fabrication approach for heterogeneous material integration on Si.« less

Printed assemblies of GaAs photoelectrodes with decoupled optical and reactive interfaces for unassisted solar water splitting

DOE PAGES

Kang, Dongseok; Young, James L.; Lim, Haneol; ...

2017-03-27

Despite their excellent photophysical properties and record-high solar-to-hydrogen conversion efficiency, the high cost and limited stability of III-V compound semiconductors prohibit their practical application in solar-driven photoelectrochemical water splitting. Here in this paper we present a strategy for III-V photocatalysis that can circumvent these difficulties via printed assemblies of epitaxially grown compound semiconductors. A thin film stack of GaAs-based epitaxial materials is released from the growth wafer and printed onto a non-native transparent substrate to form an integrated photocatalytic electrode for solar hydrogen generation. The heterogeneously integrated electrode configuration together with specialized epitaxial design serve to decouple the material interfacesmore » for illumination and electrocatalysis. Subsequently, this allows independent control and optimization of light absorption, carrier transport, charge transfer, and material stability. Using this approach, we construct a series-connected wireless tandem system of GaAs photoelectrodes and demonstrate 13.1% solar-to-hydrogen conversion efficiency of unassisted-mode water splitting.« less

A review of molecular beam epitaxy of ferroelectric BaTiO 3 films on Si, Ge and GaAs substrates and their applications

DOE PAGES

Mazet, Lucie; Yang, Sang Mo; Kalinin, Sergei V.; ...

2015-06-30

SrTiO 3 epitaxial growth by molecular beam epitaxy (MBE) on silicon has opened up the route to the monolithic integration of various complex oxides on the complementary metal-oxide-semiconductor silicon platform. Among functional oxides, ferroelectric perovskite oxides offer promising perspectives to improve or add functionalities on-chip. We review the growth by MBE of the ferroelectric compound BaTiO 3 on silicon (Si), germanium (Ge) and gallium arsenide (GaAs) and we discuss the film properties in terms of crystalline structure, microstructure and ferroelectricity. Lastly, we review the last developments in two areas of interest for the applications of BaTiO 3 films on silicon,more » namely integrated photonics, which benefits from the large Pockels effect of BaTiO 3, and low power logic devices, which may benefit from the negative capacitance of the ferroelectric.« less

An Ultrathin Single Crystalline Relaxor Ferroelectric Integrated on a High Mobility Semiconductor.

PubMed

Moghadam, Reza M; Xiao, Zhiyong; Ahmadi-Majlan, Kamyar; Grimley, Everett D; Bowden, Mark; Ong, Phuong-Vu; Chambers, Scott A; Lebeau, James M; Hong, Xia; Sushko, Peter V; Ngai, Joseph H

2017-10-11

The epitaxial growth of multifunctional oxides on semiconductors has opened a pathway to introduce new functionalities to semiconductor device technologies. In particular, the integration of gate materials that enable nonvolatile or hysteretic functionality in field-effect transistors could lead to device technologies that consume less power or allow for novel modalities in computing. Here we present electrical characterization of ultrathin single crystalline SrZr x Ti 1-x O 3 (x = 0.7) films epitaxially grown on a high mobility semiconductor, Ge. Epitaxial films of SrZr x Ti 1-x O 3 exhibit relaxor behavior, characterized by a hysteretic polarization that can modulate the surface potential of Ge. We find that gate layers as thin as 5 nm corresponding to an equivalent-oxide thickness of just 1.0 nm exhibit a ∼2 V hysteretic window in the capacitance-voltage characteristics. The development of hysteretic metal-oxide-semiconductor capacitors with nanoscale gate thicknesses opens new vistas for nanoelectronic devices.

Printed assemblies of GaAs photoelectrodes with decoupled optical and reactive interfaces for unassisted solar water splitting

NASA Astrophysics Data System (ADS)

Kang, Dongseok; Young, James L.; Lim, Haneol; Klein, Walter E.; Chen, Huandong; Xi, Yuzhou; Gai, Boju; Deutsch, Todd G.; Yoon, Jongseung

2017-03-01

Despite their excellent photophysical properties and record-high solar-to-hydrogen conversion efficiency, the high cost and limited stability of III-V compound semiconductors prohibit their practical application in solar-driven photoelectrochemical water splitting. Here we present a strategy for III-V photocatalysis that can circumvent these difficulties via printed assemblies of epitaxially grown compound semiconductors. A thin film stack of GaAs-based epitaxial materials is released from the growth wafer and printed onto a non-native transparent substrate to form an integrated photocatalytic electrode for solar hydrogen generation. The heterogeneously integrated electrode configuration together with specialized epitaxial design serve to decouple the material interfaces for illumination and electrocatalysis. Subsequently, this allows independent control and optimization of light absorption, carrier transport, charge transfer, and material stability. Using this approach, we construct a series-connected wireless tandem system of GaAs photoelectrodes and demonstrate 13.1% solar-to-hydrogen conversion efficiency of unassisted-mode water splitting.

Induced Superconductivity and Engineered Josephson Tunneling Devices in Epitaxial (111)-Oriented Gold/Vanadium Heterostructures.

PubMed

Wei, Peng; Katmis, Ferhat; Chang, Cui-Zu; Moodera, Jagadeesh S

2016-04-13

We report a unique experimental approach to create topological superconductors by inducing superconductivity into epitaxial metallic thin film with strong spin-orbit coupling. Utilizing molecular beam epitaxy technique under ultrahigh vacuum conditions, we are able to achieve (111) oriented single phase of gold (Au) thin film grown on a well-oriented vanadium (V) s-wave superconductor film with clean interface. We obtained atomically smooth Au thin films with thicknesses even down to below a nanometer showing near-ideal surface quality. The as-grown V/Au bilayer heterostructure exhibits superconducting transition at around 3.9 K. Clear Josephson tunneling and Andreev reflection are observed in S-I-S tunnel junctions fabricated from the epitaxial bilayers. The barrier thickness dependent tunneling and the associated subharmonic gap structures (SGS) confirmed the induced superconductivity in Au (111), paving the way for engineering thin film heterostructures based on p-wave superconductivity and nano devices exploiting Majorana Fermions for quantum computing.

Realizing Large-Scale, Electronic-Grade Two-Dimensional Semiconductors.

PubMed

Lin, Yu-Chuan; Jariwala, Bhakti; Bersch, Brian M; Xu, Ke; Nie, Yifan; Wang, Baoming; Eichfeld, Sarah M; Zhang, Xiaotian; Choudhury, Tanushree H; Pan, Yi; Addou, Rafik; Smyth, Christopher M; Li, Jun; Zhang, Kehao; Haque, M Aman; Fölsch, Stefan; Feenstra, Randall M; Wallace, Robert M; Cho, Kyeongjae; Fullerton-Shirey, Susan K; Redwing, Joan M; Robinson, Joshua A

2018-02-27

Atomically thin transition metal dichalcogenides (TMDs) are of interest for next-generation electronics and optoelectronics. Here, we demonstrate device-ready synthetic tungsten diselenide (WSe 2 ) via metal-organic chemical vapor deposition and provide key insights into the phenomena that control the properties of large-area, epitaxial TMDs. When epitaxy is achieved, the sapphire surface reconstructs, leading to strong 2D/3D (i.e., TMD/substrate) interactions that impact carrier transport. Furthermore, we demonstrate that substrate step edges are a major source of carrier doping and scattering. Even with 2D/3D coupling, transistors utilizing transfer-free epitaxial WSe 2 /sapphire exhibit ambipolar behavior with excellent on/off ratios (∼10 7 ), high current density (1-10 μA·μm -1 ), and good field-effect transistor mobility (∼30 cm 2 ·V -1 ·s -1 ) at room temperature. This work establishes that realization of electronic-grade epitaxial TMDs must consider the impact of the TMD precursors, substrate, and the 2D/3D interface as leading factors in electronic performance.

Process for depositing epitaxial alkaline earth oxide onto a substrate and structures prepared with the process

DOEpatents

McKee, Rodney A.; Walker, Frederick J.

1996-01-01

A process and structure involving a silicon substrate utilize molecular beam epitaxy (MBE) and/or electron beam evaporation methods and an ultra-high vacuum facility to grow a layup of epitaxial alkaline earth oxide films upon the substrate surface. By selecting metal constituents for the oxides and in the appropriate proportions so that the lattice parameter of each oxide grown closely approximates that of the substrate or base layer upon which oxide is grown, lattice strain at the film/film or film/substrate interface of adjacent films is appreciably reduced or relieved. Moreover, by selecting constituents for the oxides so that the lattice parameters of the materials of adjacent oxide films either increase or decrease in size from one parameter to another parameter, a graded layup of films can be grown (with reduced strain levels therebetween) so that the outer film has a lattice parameter which closely approximates that of, and thus accomodates the epitaxial growth of, a pervoskite chosen to be grown upon the outer film.

SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations

NASA Astrophysics Data System (ADS)

Choi, Shinhyun; Tan, Scott H.; Li, Zefan; Kim, Yunjo; Choi, Chanyeol; Chen, Pai-Yu; Yeon, Hanwool; Yu, Shimeng; Kim, Jeehwan

2018-01-01

Although several types of architecture combining memory cells and transistors have been used to demonstrate artificial synaptic arrays, they usually present limited scalability and high power consumption. Transistor-free analog switching devices may overcome these limitations, yet the typical switching process they rely on—formation of filaments in an amorphous medium—is not easily controlled and hence hampers the spatial and temporal reproducibility of the performance. Here, we demonstrate analog resistive switching devices that possess desired characteristics for neuromorphic computing networks with minimal performance variations using a single-crystalline SiGe layer epitaxially grown on Si as a switching medium. Such epitaxial random access memories utilize threading dislocations in SiGe to confine metal filaments in a defined, one-dimensional channel. This confinement results in drastically enhanced switching uniformity and long retention/high endurance with a high analog on/off ratio. Simulations using the MNIST handwritten recognition data set prove that epitaxial random access memories can operate with an online learning accuracy of 95.1%.

Epitaxial thin films

DOEpatents

Hunt, Andrew Tye; Deshpande, Girish; Lin, Wen-Yi; Jan, Tzyy-Jiuan

2006-04-25

Epitatial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal gain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.

Nanosecond laser switching of surface wettability and epitaxial integration of c-axis ZnO thin films with Si(111) substrates.

PubMed

Molaei, R; Bayati, M R; Alipour, H M; Estrich, N A; Narayan, J

2014-01-08

We have achieved integration of polar ZnO[0001] epitaxial thin films with Si(111) substrates where cubic yttria-stabilized zirconia (c-YSZ) was used as a template on a Si(111) substrate. Using XRD (θ-2θ and φ scans) and HRTEM techniques, the epitaxial relationship between the ZnO and the c-YSZ layers was shown to be [0001]ZnO || [111]YSZ and [21¯1¯0]ZnO || [1¯01](c-YSZ), where the [21¯1¯0] direction lies in the (0001) plane, and the [1¯01] direction lies in the (111) plane. Similar studies on the c-YSZ/Si interface revealed epitaxy as (111)YSZ || (111)Si and in-plane (110)YSZ || (110)Si. HRTEM micrographs revealed atomically sharp and crystallographically continuous interfaces. The ZnO epilayers were subsequently laser annealed by a single pulse of a nanosecond excimer KrF laser. It was shown that the hydrophobic behavior of the pristine sample became hydrophilic after laser treatment. XPS was employed to study the effect of laser treatment on surface stoichiometry of the ZnO epilayers. The results revealed the formation of oxygen vacancies, which are envisaged to control the observed hydrophilic behavior. Our AFM studies showed surface smoothing due to the coupling of the high energy laser beam with the surface. The importance of integration of c-axis ZnO with Si(111) substrates is emphasized using the paradigm of domain matching epitaxy on the c-YSZ[111] buffer platform along with their out-of-plane orientation, which leads to improvement of the performance of the solid-state devices. The observed ultrafast response and switching in photochemical characteristics provide new opportunities for application of ZnO in smart catalysts, sensors, membranes, DNA self-assembly and multifunctional devices.

Gallium Phosphide Integrated with Silicon Heterojunction Solar Cells

NASA Astrophysics Data System (ADS)

Zhang, Chaomin

It has been a long-standing goal to epitaxially integrate III-V alloys with Si substrates which can enable low-cost microelectronic and optoelectronic systems. Among the III-V alloys, gallium phosphide (GaP) is a strong candidate, especially for solar cells applications. Gallium phosphide with small lattice mismatch ( 0.4%) to Si enables coherent/pseudomorphic epitaxial growth with little crystalline defect creation. The band offset between Si and GaP suggests that GaP can function as an electron-selective contact, and it has been theoretically shown that GaP/Si integrated solar cells have the potential to overcome the limitations of common a-Si based heterojunction (SHJ) solar cells. Despite the promising potential of GaP/Si heterojunction solar cells, there are two main obstacles to realize high performance photovoltaic devices from this structure. First, the growth of the polar material (GaP) on the non-polar material (Si) is a challenge in how to suppress the formation of structural defects, such as anti-phase domains (APD). Further, it is widely observed that the minority-carrier lifetime of the Si substrates is significantly decreased during epitaxially growth of GaP on Si. In this dissertation, two different GaP growth methods were compared and analyzed, including migration-enhanced epitaxy (MEE) and traditional molecular beam epitaxy (MBE). High quality GaP can be realized on precisely oriented (001) Si substrates by MBE growth, and the investigation of structural defect creation in the GaP/Si epitaxial structures was conducted using high resolution X-ray diffraction (HRXRD) and high resolution transmission electron microscopy (HRTEM). The mechanisms responsible for lifetime degradation were further investigated, and it was found that external fast diffusors are the origin for the degradation. Two practical approaches including the use of both a SiNx diffusion barrier layer and P-diffused layers, to suppress the Si minority-carrier lifetime degradation during GaP epitaxial growth on Si by MBE were proposed. To achieve high performance of GaP/Si solar cells, different GaP/Si structures were designed, fabricated and compared, including GaP as a hetero-emitter, GaP as a heterojunction on the rear side, inserting passivation membrane layers at the GaP/Si interface, and GaP/wet-oxide functioning as a passivation contact. A designed of a-Si free carrier-selective contact MoOx/Si/GaP solar cells demonstrated 14.1% power conversion efficiency.

Methods for fabricating thin film III-V compound solar cell

DOEpatents

Pan, Noren; Hillier, Glen; Vu, Duy Phach; Tatavarti, Rao; Youtsey, Christopher; McCallum, David; Martin, Genevieve

2011-08-09

The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell.

Method utilizing laser-processing for the growth of epitaxial p-n junctions

DOEpatents

Young, R.T.; Narayan, J.; Wood, R.F.

1979-11-23

This invention is a new method for the formation of epitaxial p-n junctions in silicon. The method is relatively simple, rapid, and reliable. It produces doped epitaxial layers which are of well-controlled thickness and whose electrical properties are satisfactory. An illustrative form of the method comprises co-depositing a selected dopant and amorphous silicon on a crystalline silicon substrate to form a doped layer of amorphous silicon thereon. This layer then is irradiated with at least one laser pulse to generate a melt front which moves through the layer, into the silicon body to a depth effecting melting of virginal silicon, and back to the surface of the layer. The method may be conducted with dopants (e.g., boron and phosphorus) whose distribution coefficients approximate unity.

Strained-layer indium gallium arsenide-gallium arsenide- aluminum galium arsenide photonic devices by metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Osowski, Mark Louis

With the arrival of advanced growth technologies such as molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD), research in III-V compound semiconductor photonic devices has flourished. Advances in fabrication processes have allowed the realization of high-performance quantum well lasers which emit over a wide spectral range and operate with low threshold currents. As a result, semiconductor lasers are presently employed in a wide variety of applications, including fiber-optic telecommunications, optical spectroscopy, solid-state laser pumping, and photonic integrated circuits. The work in this dissertation addresses three photonic device structures which are currently receiving a great deal of attention in the research community: integrable quantum well laser devices, distributed feedback (DFB) laser devices, and quantum wire arrays. For the realization of the integrable and integrated photonic devices described-in Chapter 2, a three-step selective-area growth technique was utilized. The selective epitaxy process was used to produce discrete buried-heterostructure Fabry Perot lasers with threshold currents as low as 2.6 mA. Based on this process, broad- spectrum edge-emitting superluminescent diodes are demonstrated which display spectral widths of over 80 nm. In addition, the monolithic integration of a multiwavelength emitter is demonstrated in which two distinct laser sources are coupled into a single output waveguide. The dissertation also describes the development of a single-growth-step ridge waveguide DFB laser. The DFB laser utilizes an asymmetric cladding waveguide structure to enhance the interaction of the optical mode with the titanium surface metal to promote single frequency emission via gain coupling. These lasers exhibit low threshold currents (11 mA), high side mode suppression ratios (50 dB), and narrow linewidths (45 kHz). In light of the substantial performance advantages of quantum well lasers relative to double heterostructure lasers, extensive efforts have been directed toward producing quantum wire systems. In view of this, the final subject of this dissertation details the fabrication and characterization of quantum wire arrays by selective-area MOCVD. The method employs a silicon dioxide grating mask with sub-micron oxide dimensions to achieve selective deposition of high-quality buried layers in the open areas of the patterned substrate. This allows the fabrication of embedded nanostructures in a single growth step, and the crystallographic nature of the growth allows for control of their lateral size. Using this process, the growth of strained InGaAs wires with a lateral dimension of less than 50 nm are obtained. Subsequent characterization by photoluminescence, scanning electron microscopy and transmission electron microscopy is also presented.

Integration of InGaAs MOSFETs and GaAs/ AlGaAs lasers on Si Substrate for advanced opto-electronic integrated circuits (OEICs).

PubMed

Kumar, Annie; Lee, Shuh-Ying; Yadav, Sachin; Tan, Kian Hua; Loke, Wan Khai; Dong, Yuan; Lee, Kwang Hong; Wicaksono, Satrio; Liang, Gengchiau; Yoon, Soon-Fatt; Antoniadis, Dimitri; Yeo, Yee-Chia; Gong, Xiao

2017-12-11

Lasers monolithically integrated with high speed MOSFETs on the silicon (Si) substrate could be a key to realize low cost, low power, and high speed opto-electronic integrated circuits (OEICs). In this paper, we report the monolithic integration of InGaAs channel transistors with electrically pumped GaAs/AlGaAs lasers on the Si substrate for future advanced OEICs. The laser and transistor layers were grown on the Si substrate by molecular beam epitaxy (MBE) using direct epitaxial growth. InGaAs n-FETs with an I ON /I OFF ratio of more than 10 6 with very low off-state leakage and a low subthreshold swing with a minimum of 82 mV/decade were realized. Electrically pumped GaAs/AlGaAs quantum well (QW) lasers with a lasing wavelength of 795 nm at room temperature were demonstrated. The overall fabrication process has a low thermal budget of no more than 400 °C.

A 10-GHz amplifier using an epitaxial lift-off pseudomorphic HEMT device

NASA Technical Reports Server (NTRS)

Young, Paul G.; Romanofsky, Robert R.; Alterovitz, Samuel A.; Mena, Rafael A.; Smith, Edwyn D.

1993-01-01

A process to integrate epitaxial lift-off devices and microstrip circuits has been demonstrated using a pseudomorphic HEMT on an alumina substrate. The circuit was a 10 GHz amplifier with the interconnection between the device and the microstrip circuit being made with photolithographically patterned metal. The measured and modeled response correlated extremely well with a maximum gain of 6.8 dB and a return loss of -14 dB at 10.4 GHz.

Vertically aligned GaAs nanowires on graphite and few-layer graphene: generic model and epitaxial growth.

PubMed

Munshi, A Mazid; Dheeraj, Dasa L; Fauske, Vidar T; Kim, Dong-Chul; van Helvoort, Antonius T J; Fimland, Bjørn-Ove; Weman, Helge

2012-09-12

By utilizing the reduced contact area of nanowires, we show that epitaxial growth of a broad range of semiconductors on graphene can in principle be achieved. A generic atomic model is presented which describes the epitaxial growth configurations applicable to all conventional semiconductor materials. The model is experimentally verified by demonstrating the growth of vertically aligned GaAs nanowires on graphite and few-layer graphene by the self-catalyzed vapor-liquid-solid technique using molecular beam epitaxy. A two-temperature growth strategy was used to increase the nanowire density. Due to the self-catalyzed growth technique used, the nanowires were found to have a regular hexagonal cross-sectional shape, and are uniform in length and diameter. Electron microscopy studies reveal an epitaxial relationship of the grown nanowires with the underlying graphitic substrates. Two relative orientations of the nanowire side-facets were observed, which is well explained by the proposed atomic model. A prototype of a single GaAs nanowire photodetector demonstrates a high-quality material. With GaAs being a model system, as well as a very useful material for various optoelectronic applications, we anticipate this particular GaAs nanowire/graphene hybrid to be promising for flexible and low-cost solar cells.

Method of Generating X-Ray Diffraction Data for Integral Detection of Twin Defects in Super-Hetero-Epitaxial Materials

NASA Technical Reports Server (NTRS)

Park, Yeonjoon (Inventor); Choi, Sang Hyouk (Inventor); King, Glen C. (Inventor); Elliott, James R. (Inventor)

2009-01-01

A method provides X-ray diffraction (XRD) data suitable for integral detection of a twin defect in a strained or lattice-matched epitaxial material made from components having crystal structures having symme try belonging to different space groups. The material is mounted in a n X-ray diffraction (XRD) system. In one embodiment, the XRD system's goniometer angle Omega is set equal to (Theta(sub B)-Beta) where The ta(sub B) is a Bragg angle for a designated crystal plane of the allo y that is disposed at a non-perpendicular orientation with respect to the {111) crystal plane, and Beta is the angle between the designate d crystal plane and a { 111 } crystal plane of one of the epitaxial components. The XRD system's detector angle is set equal to (Theta(su b B)+Beta). The material can be rotated through an angle of azimuthal rotation Phi about the axis aligned with the material. Using the det ector, the intensity of the X-ray diffraction is recorded at least at the angle at which the twin defect occurs.

Selective Epitaxy of InP on Si and Rectification in Graphene/InP/Si Hybrid Structure.

PubMed

Niu, Gang; Capellini, Giovanni; Hatami, Fariba; Di Bartolomeo, Antonio; Niermann, Tore; Hussein, Emad Hameed; Schubert, Markus Andreas; Krause, Hans-Michael; Zaumseil, Peter; Skibitzki, Oliver; Lupina, Grzegorz; Masselink, William Ted; Lehmann, Michael; Xie, Ya-Hong; Schroeder, Thomas

2016-10-12

The epitaxial integration of highly heterogeneous material systems with silicon (Si) is a central topic in (opto-)electronics owing to device applications. InP could open new avenues for the realization of novel devices such as high-mobility transistors in next-generation CMOS or efficient lasers in Si photonics circuitry. However, the InP/Si heteroepitaxy is highly challenging due to the lattice (∼8%), thermal expansion mismatch (∼84%), and the different lattice symmetries. Here, we demonstrate the growth of InP nanocrystals showing high structural quality and excellent optoelectronic properties on Si. Our CMOS-compatible innovative approach exploits the selective epitaxy of InP nanocrystals on Si nanometric seeds obtained by the opening of lattice-arranged Si nanotips embedded in a SiO 2 matrix. A graphene/InP/Si-tip heterostructure was realized on obtained materials, revealing rectifying behavior and promising photodetection. This work presents a significant advance toward the monolithic integration of graphene/III-V based hybrid devices onto the mainstream Si technology platform.

Thermal stability of MBE-grown epitaxial MoSe2 and WSe2 thin films

NASA Astrophysics Data System (ADS)

Chang, Young Jun; Choy, Byoung Ki; Phark, Soo-Hyon; Kim, Minu

Layered transition metal dichalcogenides (TMDs) draw much attention, because of its unique optical properties and band structures depending on the layer thicknesses. However, MBE growth of epitaxial films demands information about thermal stability of stoichiometry and related electronic structure for high temperature range. We grow epitaxial MoSe2 and WSe2 ultrathin films by using molecular beam epitaxy (MBE). We characterize stoichiometry of films grown at various growth temperature by using various methods, XPS, EDX, and TOF-MEIS. We further test high temperature stability of electronic structure for those films by utilizing in-situ ellipsometry attached to UHV chamber. We discuss threshold temperatures up to 700~1000oC, at which electronic phases changes from semiconductor to metal due to selenium deficiency. This information can be useful for potential application of TMDs for fabrication of Van der Waals multilayers and related devices. This research was supported by Nano.Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning. (2009-0082580), NRF-2014R1A1A1002868.

Surface step terrace tuned microstructures and dielectric properties of highly epitaxial CaCu3Ti4O12 thin films on vicinal LaAlO3 substrates

PubMed Central

Yao, Guang; Gao, Min; Ji, Yanda; Liang, Weizheng; Gao, Lei; Zheng, Shengliang; Wang, You; Pang, Bin; Chen, Y. B.; Zeng, Huizhong; Li, Handong; Wang, Zhiming; Liu, Jingsong; Chen, Chonglin; Lin, Yuan

2016-01-01

Controllable interfacial strain can manipulate the physical properties of epitaxial films and help understand the physical nature of the correlation between the properties and the atomic microstructures. By using a proper design of vicinal single-crystal substrate, the interface strain in epitaxial thin films can be well controlled by adjusting the miscut angle via a surface-step-terrace matching growth mode. Here, we demonstrate that LaAlO3 (LAO) substrates with various miscut angles of 1.0°, 2.75°, and 5.0° were used to tune the dielectric properties of epitaxial CaCu3Ti4O12 (CCTO) thin films. A model of coexistent compressive and tensile strained domains is proposed to understand the epitaxial nature. Our findings on the self-tuning of the compressive and tensile strained domain ratio along the interface depending on the miscut angle and the stress relaxation mechanism under this growth mode will open a new avenue to achieve CCTO films with high dielectric constant and low dielectric loss, which is critical for the design and integration of advanced heterostructures for high performance capacitance device applications. PMID:27703253

Surface step terrace tuned microstructures and dielectric properties of highly epitaxial CaCu3Ti4O12 thin films on vicinal LaAlO3 substrates

NASA Astrophysics Data System (ADS)

Yao, Guang; Gao, Min; Ji, Yanda; Liang, Weizheng; Gao, Lei; Zheng, Shengliang; Wang, You; Pang, Bin; Chen, Y. B.; Zeng, Huizhong; Li, Handong; Wang, Zhiming; Liu, Jingsong; Chen, Chonglin; Lin, Yuan

2016-10-01

Controllable interfacial strain can manipulate the physical properties of epitaxial films and help understand the physical nature of the correlation between the properties and the atomic microstructures. By using a proper design of vicinal single-crystal substrate, the interface strain in epitaxial thin films can be well controlled by adjusting the miscut angle via a surface-step-terrace matching growth mode. Here, we demonstrate that LaAlO3 (LAO) substrates with various miscut angles of 1.0°, 2.75°, and 5.0° were used to tune the dielectric properties of epitaxial CaCu3Ti4O12 (CCTO) thin films. A model of coexistent compressive and tensile strained domains is proposed to understand the epitaxial nature. Our findings on the self-tuning of the compressive and tensile strained domain ratio along the interface depending on the miscut angle and the stress relaxation mechanism under this growth mode will open a new avenue to achieve CCTO films with high dielectric constant and low dielectric loss, which is critical for the design and integration of advanced heterostructures for high performance capacitance device applications.

Surface step terrace tuned microstructures and dielectric properties of highly epitaxial CaCu3Ti4O12 thin films on vicinal LaAlO3 substrates.

PubMed

Yao, Guang; Gao, Min; Ji, Yanda; Liang, Weizheng; Gao, Lei; Zheng, Shengliang; Wang, You; Pang, Bin; Chen, Y B; Zeng, Huizhong; Li, Handong; Wang, Zhiming; Liu, Jingsong; Chen, Chonglin; Lin, Yuan

2016-10-05

Controllable interfacial strain can manipulate the physical properties of epitaxial films and help understand the physical nature of the correlation between the properties and the atomic microstructures. By using a proper design of vicinal single-crystal substrate, the interface strain in epitaxial thin films can be well controlled by adjusting the miscut angle via a surface-step-terrace matching growth mode. Here, we demonstrate that LaAlO 3 (LAO) substrates with various miscut angles of 1.0°, 2.75°, and 5.0° were used to tune the dielectric properties of epitaxial CaCu 3 Ti 4 O 12 (CCTO) thin films. A model of coexistent compressive and tensile strained domains is proposed to understand the epitaxial nature. Our findings on the self-tuning of the compressive and tensile strained domain ratio along the interface depending on the miscut angle and the stress relaxation mechanism under this growth mode will open a new avenue to achieve CCTO films with high dielectric constant and low dielectric loss, which is critical for the design and integration of advanced heterostructures for high performance capacitance device applications.

Near-Infrared Photoluminescence Enhancement in Ge/CdS and Ge/ZnS Core/Shell Nanocrystals: Utilizing IV/II-VI Semiconductor Epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guo, Yijun; Rowland, Clare E; Schaller, Richard D

2014-08-26

Ge nanocrystals have a large Bohr radius and a small, size-tunable band gap that may engender direct character via strain or doping. Colloidal Ge nanocrystals are particularly interesting in the development of near-infrared materials for applications in bioimaging, telecommunications and energy conversion. Epitaxial growth of a passivating shell is a common strategy employed in the synthesis of highly luminescent II–VI, III–V and IV–VI semiconductor quantum dots. Here, we use relatively unexplored IV/II–VI epitaxy as a way to enhance the photoluminescence and improve the optical stability of colloidal Ge nanocrystals. Selected on the basis of their relatively small lattice mismatch comparedmore » with crystalline Ge, we explore the growth of epitaxial CdS and ZnS shells using the successive ion layer adsorption and reaction method. Powder X-ray diffraction and electron microscopy techniques, including energy dispersive X-ray spectroscopy and selected area electron diffraction, clearly show the controllable growth of as many as 20 epitaxial monolayers of CdS atop Ge cores. In contrast, Ge etching and/or replacement by ZnS result in relatively small Ge/ZnS nanocrystals. The presence of an epitaxial II–VI shell greatly enhances the near-infrared photoluminescence and improves the photoluminescence stability of Ge. Ge/II–VI nanocrystals are reproducibly 1–3 orders of magnitude brighter than the brightest Ge cores. Ge/4.9CdS core/shells show the highest photoluminescence quantum yield and longest radiative recombination lifetime. Thiol ligand exchange easily results in near-infrared active, water-soluble Ge/II–VI nanocrystals. We expect this synthetic IV/II–VI epitaxial approach will lead to further studies into the optoelectronic behavior and practical applications of Si and Ge-based nanomaterials.« less

Van der Waals epitaxy of functional MoO{sub 2} film on mica for flexible electronics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ma, Chun-Hao; Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan; Lin, Jheng-Cyuan

Flexible electronics have a great potential to impact consumer electronics and with that our daily life. Currently, no direct growth of epitaxial functional oxides on commercially available flexible substrates is possible. In this study, in order to address this challenge, muscovite, a common layered oxide, is used as a flexible substrate that is chemically similar to typical functional oxides. We fabricated epitaxial MoO{sub 2} films on muscovite via pulsed laser deposition technique. A combination of X-ray diffraction and transmission electron microscopy confirms van der Waals epitaxy of the heterostructures. The electrical transport properties of MoO{sub 2} films are similar tomore » those of the bulk. Flexible or free-standing MoO{sub 2} thin film can be obtained and serve as a template to integrate additional functional oxide layers. Our study demonstrates a remarkable concept to create flexible electronics based on functional oxides.« less

Band offsets and growth mode of molecular beam epitaxy grown MgO (111) on GaN (0002) by x-ray photoelectron spectroscopy

NASA Astrophysics Data System (ADS)

Craft, H. S.; Collazo, R.; Losego, M. D.; Mita, S.; Sitar, Z.; Maria, J.-P.

2007-10-01

MgO is a proposed dielectric for use as a tunneling barrier in devices integrating GaN and ferroelectric oxides. In this study, we present data regarding the growth mode and band offsets of MgO grown epitaxially on GaN (0002) surfaces using molecular beam epitaxy. Using in situ x-ray photoelectron spectroscopy (XPS) and molecular beam epitaxy, we determine, from sequential growth experiments, that the growth of MgO proceeds via the Volmer-Weber (three-dimensional) mode, and full coalescence of the film does not occur until approximately 12nm of MgO has been deposited. The observation of a three-dimensional growth mode is in agreement with previously published data. For the valence band offset, we find a value of 1.2±0.2eV, which corresponds to a 3.2eV conduction band offset. XPS measurements suggest a chemically abrupt interface and no effect on band lineup due to the slow coalescence behavior.

Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask

NASA Astrophysics Data System (ADS)

Puybaret, Renaud; Patriarche, Gilles; Jordan, Matthew B.; Sundaram, Suresh; El Gmili, Youssef; Salvestrini, Jean-Paul; Voss, Paul L.; de Heer, Walt A.; Berger, Claire; Ougazzaden, Abdallah

2016-03-01

We report the growth of high-quality triangular GaN nanomesas, 30-nm thick, on the C-face of 4H-SiC using nanoselective area growth (NSAG) with patterned epitaxial graphene grown on SiC as an embedded mask. NSAG alleviates the problems of defects in heteroepitaxy, and the high mobility graphene film could readily provide the back low-dissipative electrode in GaN-based optoelectronic devices. A 5-8 graphene-layer film is first grown on the C-face of 4H-SiC by confinement-controlled sublimation of silicon carbide. Graphene is then patterned and arrays of 75-nm-wide openings are etched in graphene revealing the SiC substrate. A 30-nm-thick GaN is subsequently grown by metal organic vapor phase epitaxy. GaN nanomesas grow epitaxially with perfect selectivity on SiC, in the openings patterned through graphene. The up-or-down orientation of the mesas on SiC, their triangular faceting, and cross-sectional scanning transmission electron microscopy show that they are biphasic. The core is a zinc blende monocrystal surrounded with single-crystal wurtzite. The GaN crystalline nanomesas have no threading dislocations or V-pits. This NSAG process potentially leads to integration of high-quality III-nitrides on the wafer scalable epitaxial graphene/silicon carbide platform.

Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask

DOE Office of Scientific and Technical Information (OSTI.GOV)

Puybaret, Renaud; Jordan, Matthew B.; Voss, Paul L.

We report the growth of high-quality triangular GaN nanomesas, 30-nm thick, on the C-face of 4H-SiC using nanoselective area growth (NSAG) with patterned epitaxial graphene grown on SiC as an embedded mask. NSAG alleviates the problems of defects in heteroepitaxy, and the high mobility graphene film could readily provide the back low-dissipative electrode in GaN-based optoelectronic devices. A 5–8 graphene-layer film is first grown on the C-face of 4H-SiC by confinement-controlled sublimation of silicon carbide. Graphene is then patterned and arrays of 75-nm-wide openings are etched in graphene revealing the SiC substrate. A 30-nm-thick GaN is subsequently grown by metalmore » organic vapor phase epitaxy. GaN nanomesas grow epitaxially with perfect selectivity on SiC, in the openings patterned through graphene. The up-or-down orientation of the mesas on SiC, their triangular faceting, and cross-sectional scanning transmission electron microscopy show that they are biphasic. The core is a zinc blende monocrystal surrounded with single-crystal wurtzite. The GaN crystalline nanomesas have no threading dislocations or V-pits. This NSAG process potentially leads to integration of high-quality III-nitrides on the wafer scalable epitaxial graphene/silicon carbide platform.« less

Ideal Channel Field Effect Transistors

DTIC Science & Technology

2010-03-01

well as on /?-GaAs/w-GaAs homojunctions grown by molecular beam epitaxy (MBE). The diode I-Vs at reverse bias are plotted below. The measured breakdown...transistors and composite channel InAlAs/InGaAs/lnP/InAlAs high electron mobility transistors ( HEMTs ), which have taken the full advantage of the matched...result in a large number of dislocations in GaAs films epitaxially grown on wurtzite GaN. In this work, we have successfully integrated GaAs with GaN

III-V Compounds and Alloys: An Update.

PubMed

Woodall, J M

1980-05-23

The III-V compounds and alloys have been studied for three decades. Until recently, these materials have been commercialized for only a few specialized optoelectronic devices and microwave devices. Advances in thin-film epitaxy techniques, such as liquid phase epitaxy and chemical vapor deposition, are now providing the ability to form good quality lattice-matched heterojunctions with III-V materials. New optoelectronic devices, such as room-temperature continuous-wave injection lasers, have already resulted. This newfound ability may also affect the field of highspeed integrated circuits.

Molecular beam epitaxy growth of SrO buffer layers on graphite and graphene for the integration of complex oxides

DOE PAGES

Ahmed, Adam S.; Wen, Hua; Ohta, Taisuke; ...

2016-04-27

Here, we report the successful growth of high-quality SrO films on highly-ordered pyrolytic graphite (HOPG) and single-layer graphene by molecular beam epitaxy. The SrO layers have (001) orientation as confirmed by X-ray diffraction (XRD) while atomic force microscopy measurements show continuous pinhole-free films having rms surface roughness of <1.5 Å. Moreover, transport measurements of exfoliated graphene, after SrO deposition, show a strong dependence between the Dirac point and Sr oxidation. As a result, the SrO is leveraged as a buffer layer for more complex oxide integration via the demonstration of (001) oriented SrTiO3 grown atop a SrO/HOPG stack.

Molecular beam epitaxy growth of SrO buffer layers on graphite and graphene for the integration of complex oxides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahmed, Adam S.; Wen, Hua; Ohta, Taisuke

Here, we report the successful growth of high-quality SrO films on highly-ordered pyrolytic graphite (HOPG) and single-layer graphene by molecular beam epitaxy. The SrO layers have (001) orientation as confirmed by X-ray diffraction (XRD) while atomic force microscopy measurements show continuous pinhole-free films having rms surface roughness of <1.5 Å. Moreover, transport measurements of exfoliated graphene, after SrO deposition, show a strong dependence between the Dirac point and Sr oxidation. As a result, the SrO is leveraged as a buffer layer for more complex oxide integration via the demonstration of (001) oriented SrTiO3 grown atop a SrO/HOPG stack.

III-nitride integration on ferroelectric materials of lithium niobate by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Namkoong, Gon; Lee, Kyoung-Keun; Madison, Shannon M.; Henderson, Walter; Ralph, Stephen E.; Doolittle, W. Alan

2005-10-01

Integration of III-nitride electrical devices on the ferroelectric material lithium niobate (LiNbO3) has been demonstrated. As a ferroelectric material, lithium niobate has a polarization which may provide excellent control of the polarity of III-nitrides. However, while high temperature, 1000°C, thermal treatments produce atomically smooth surfaces, improving adhesion of GaN epitaxial layers on lithium niobate, repolarization of the substrate in local domains occurs. These effects result in multi domains of mixed polarization in LiNbO3, producing inversion domains in subsequent GaN epilayers. However, it is found that AlN buffer layers suppress inversion domains of III-nitrides. Therefore, two-dimensional electron gases in AlGaN /GaN heterojunction structures are obtained. Herein, the demonstration of the monolithic integration of high power devices with ferroelectric materials presents possibilities to control LiNbO3 modulators on compact optoelectronic/electronic chips.

FIBER AND INTEGRATED OPTICS: Photodetector waveguide structures made of epitaxial InGaAs films and intended for integrated circuits manufactured from III-V semiconductor compounds

NASA Astrophysics Data System (ADS)

Shmal'ko, A. V.; Lamekin, V. F.; Smirnov, V. L.; Polyantsev, A. S.; Kogan, Yu I.; Babushkina, T. S.; Kuntsevich, T. S.; Peshkovskaya, O. G.

1990-08-01

Photodetector waveguide structures made of epitaxial InxGa1 - xAs solid-solution films were developed and investigated. These structures were intended for optical integrated circuits manufactured from III-V semiconductor compounds for operation in the wavelength range 1.0-1.5 μm. Two types of photodetector waveguide p-i-n structures were developed. They consisted of a composite waveguide and tunnel-coupled waveguides, respectively. A study was made of structural parameters, responsivity, spectral and time characteristics, and dark currents in photodetectors made of the waveguide structures. This investigation was carried out in the wavelength range 1.0-1.3 μm. The maximum spectral responsivity of one of the types of the waveguide photodetector was ~ 0.5 ± 0.1 A/W and the dark current did not exceed 10 - 7-10 - 8 A.

Photonic integrated circuits based on sampled-grating distributed-Bragg-reflector lasers

NASA Astrophysics Data System (ADS)

Barton, Jonathon S.; Skogen, Erik J.; Masanovic, Milan L.; Raring, James; Sysak, Matt N.; Johansson, Leif; DenBaars, Steven P.; Coldren, Larry A.

2003-07-01

The Sampled-Grating Distributed-Bragg-Reflector laser(SGDBR) provides wide tunability (>40nm), and high output power (>10mW). Driven by the demand for network reconfigurability and ease of implementation, the SGDBR has moved from the research lab to be commercially viable in the marketplace. The SGDBR is most often implemented using an offset-quantum well epitaxial structure in which the quantum wells are etched off in the passive sections. Alternatively, quantum well intermixing has been used recently to achieve the same goal - resulting in improved optical gain and the potential for multiple bandgaps along the device structure. These epitaxial "platforms" provide the basis for more exotic opto-electronic device functionality exhibiting low chirp for digital applications and enhanced linearity for analog applications. This talk will cover state-of-the-art opto-electronic devices based on the SGDBR platform including: integrated Mach-Zehnder modulators, and integrated electro-absorption modulators.

High ferroelectric polarization in c-oriented BaTiO 3 epitaxial thin films on SrTiO 3/Si(001)

DOE PAGES

Scigaj, M.; Chao, C. H.; Gázquez, J.; ...

2016-09-21

The integration of epitaxial BaTiO 3 films on silicon, combining c-orientation, surface flatness, and high ferroelectric polarization is of main interest towards its use in memory devices. This combination of properties has been only achieved so far by using yttria-stabilized zirconia buffer layers. Here, the all-perovskite BaTiO 3/LaNiO 3/SrTiO 3 heterostructure is grown monolithically on Si(001). The BaTiO 3 films are epitaxial and c-oriented and present low surface roughness and high remnant ferroelectric polarization around 6 μC/cm 2. Lastly, this result paves the way towards the fabrication of lead-free BaTiO 3 ferroelectric memories on silicon platforms.

Coherent, atomically thin transition-metal dichalcogenide superlattices with engineered strain

NASA Astrophysics Data System (ADS)

Xie, Saien; Tu, Lijie; Han, Yimo; Huang, Lujie; Kang, Kibum; Lao, Ka Un; Poddar, Preeti; Park, Chibeom; Muller, David A.; DiStasio, Robert A.; Park, Jiwoong

2018-03-01

Epitaxy forms the basis of modern electronics and optoelectronics. We report coherent atomically thin superlattices in which different transition metal dichalcogenide monolayers—despite large lattice mismatches—are repeated and laterally integrated without dislocations within the monolayer plane. Grown by an omnidirectional epitaxy, these superlattices display fully matched lattice constants across heterointerfaces while maintaining an isotropic lattice structure and triangular symmetry. This strong epitaxial strain is precisely engineered via the nanoscale supercell dimensions, thereby enabling broad tuning of the optical properties and producing photoluminescence peak shifts as large as 250 millielectron volts. We present theoretical models to explain this coherent growth and the energetic interplay governing the ripple formation in these strained monolayers. Such coherent superlattices provide building blocks with targeted functionalities at the atomically thin limit.

High efficiency epitaxial GaAs/GaAs and GaAs/Ge solar cell technology using OM/CVD

NASA Technical Reports Server (NTRS)

Wang, K. L.; Yeh, Y. C. M.; Stirn, R. J.; Swerdling, S.

1980-01-01

A technology for fabricating high efficiency, thin film GaAs solar cells on substrates appropriate for space and/or terrestrial applications was developed. The approach adopted utilizes organometallic chemical vapor deposition (OM-CVD) to form a GaAs layer epitaxially on a suitably prepared Ge epi-interlayer deposited on a substrate, especially a light weight silicon substrate which can lead to a 300 watt per kilogram array technology for space. The proposed cell structure is described. The GaAs epilayer growth on single crystal GaAs and Ge wafer substrates were investigated.

Hydride vapor phase epitaxy of AlN using a high temperature hot-wall reactor

NASA Astrophysics Data System (ADS)

Baker, Troy; Mayo, Ashley; Veisi, Zeinab; Lu, Peng; Schmitt, Jason

2014-10-01

Aluminum nitride (AlN) was grown on c-plane sapphire substrates by hydride vapor phase epitaxy (HVPE). The experiments utilized a two zone inductively heated hot-wall reactor. The surface morphology, crystal quality, and growth rate were investigated as a function of growth temperature in the range of 1450-1575 °C. AlN templates grown to a thickness of 1 μm were optimized with double axis X-ray diffraction (XRD) rocking curve full width half maximums (FWHMs) of 135″ for the (002) and 513″ for the (102).

Self-assembled Metallic Dots and Antidots: Epitaxial Co on Ru(0001)

NASA Astrophysics Data System (ADS)

Yu, Chengtao; Li, Dongqi; Pearson, J.; Bader, S. D.

2001-03-01

We have grown 1-420 nm thick epitaxial Co wedge on Ru(0001) with molecular beam epitaxy at 350^oC to investigate self-assembly in metals utilizing ex-situ atomic force microscopy. A novel growth mode was observed whereby three-dimensional islands (dots) or a flat film network with deep holes (antidots) in truncated pyramidal shapes exist below or above 20 nm, respectively. The tops of the islands and the rims of the holes are flat with a root mean square roughness values of 0.3 nm. The lateral sizes of these dots/antidots, 10^2 nm, tend to be uniform. We postulate that this growth mode, similar to that of self-assembled quantum dots in semiconductors, is mainly driven by strain as a result of an 8% lateral mismatch between the basil plane lattice constants of bulk Co and Ru.

Role of thermal processes in dewetting of epitaxial Ag(111) film on Si(111)

DOE PAGES

Sanders, Charlotte E.; Zhang, Chendong D.; Kellogg, Gary L.; ...

2014-08-01

Epitaxially grown silver (Ag) film on silicon (Si) is an optimal plasmonic device platform, but its technological utility has been limited by its tendency to dewet rapidly under ambient conditions (standard temperature and pressure). The mechanisms driving this dewetting have not heretofore been determined. In our study, scanning probe microscopy and low-energy electron microscopy are used to compare the morphological evolution of epitaxial Ag(111)/Si(111) under ambient conditions with that of similarly prepared films heated under ultra-high vacuum (UHV) conditions. Furthermore, dewetting is seen to be initiated with the formation of pinholes, which might function to relieve strain in the film.more » We find that in the UHV environment, dewetting is determined by thermal processes, and while under ambient conditions, thermal processes are not required. Finally, we conclude that dewetting in ambient conditions is triggered by some chemical process, most likely oxidation.« less

Integration of functional oxides and semiconductors

NASA Astrophysics Data System (ADS)

Demkov, Alex

2012-10-01

The astounding progress of recent years in the area of oxide deposition has made possible the creation of oxide heterostructures with atomically abrupt interfaces. The ability to control the length scale, strain, and orbital order in these materials structures offers a uniquely rich toolbox for condensed matter physicists. Because the oxide layers are very thin, the physics is often controlled by the interface. The electronic properties of oxide interfaces are governed by a subtle interplay of many competing interactions such as strain, polar catastrophe, electron correlation, and Jahn-Teller coupling, as well as by defects and phase stability. It is not clear which, if any, of these newly discovered systems will find applications in future high-tech devices. However, they undoubtedly hold tremendous promise, particularly when integrated with conventional semiconductors such as Si. In this talk I will review our recent results in theoretical modeling and experimental realization of several epitaxial oxide heterostructures. I will set the stage with a brief discussion of extrinsic magnetoelectric coupling at the interface of a perovskite ferroelectric and conventional ferromagnet. I will then describe our recent successful attempt to integrate anatase, a photo-catalytic polymorph of TiO2, with Si (001) using molecular beam epitaxy. In conclusion, I will talk about strain stabilized ferromagnetism in correlated LaCoO3 (LCO) and monolithic integration of LCO and silicon for possible applications in spintronics. The integration is achieved via the single crystal SrTiO3 (STO) buffer epitaxially grown on Si. Superconducting quantum interference device magnetization measurements show that, unlike the bulk material, the ground state of the strained LaCoO3 on silicon is ferromagnetic with a TC of 85 K.

Electrostatic transfer of epitaxial graphene to glass.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ohta, Taisuke; Pan, Wei; Howell, Stephen Wayne

2010-12-01

We report on a scalable electrostatic process to transfer epitaxial graphene to arbitrary glass substrates, including Pyrex and Zerodur. This transfer process could enable wafer-level integration of graphene with structured and electronically-active substrates such as MEMS and CMOS. We will describe the electrostatic transfer method and will compare the properties of the transferred graphene with nominally-equivalent 'as-grown' epitaxial graphene on SiC. The electronic properties of the graphene will be measured using magnetoresistive, four-probe, and graphene field effect transistor geometries [1]. To begin, high-quality epitaxial graphene (mobility 14,000 cm2/Vs and domains >100 {micro}m2) is grown on SiC in an argon-mediated environmentmore » [2,3]. The electrostatic transfer then takes place through the application of a large electric field between the donor graphene sample (anode) and the heated acceptor glass substrate (cathode). Using this electrostatic technique, both patterned few-layer graphene from SiC(000-1) and chip-scale monolayer graphene from SiC(0001) are transferred to Pyrex and Zerodur substrates. Subsequent examination of the transferred graphene by Raman spectroscopy confirms that the graphene can be transferred without inducing defects. Furthermore, the strain inherent in epitaxial graphene on SiC(0001) is found to be partially relaxed after the transfer to the glass substrates.« less

Silver free III-nitride flip chip light-emitting-diode with wall plug efficiency over 70% utilizing a GaN tunnel junction

NASA Astrophysics Data System (ADS)

Yonkee, B. P.; Young, E. C.; DenBaars, S. P.; Nakamura, S.; Speck, J. S.

2016-11-01

A molecular beam epitaxy regrowth technique was demonstrated on standard industrial patterned sapphire substrate light-emitting diode (LED) epitaxial wafers emitting at 455 nm to form a GaN tunnel junction. By using an HF pretreatment on the wafers before regrowth, a voltage of 3.08 V at 20 A/cm2 was achieved on small area devices. A high extraction package was developed for comparison with flip chip devices which utilize an LED floating in silicone over a BaSO4 coated header and produced a peak external quantum efficiency (EQE) of 78%. A high reflectivity mirror was designed using a seven-layer dielectric coating backed by aluminum which has a calculated angular averaged reflectivity over 98% between 400 and 500 nm. This was utilized to fabricate a flip chip LED which had a peak EQE and wall plug efficiency of 76% and 73%, respectively. This flip chip could increase light extraction over a traditional flip chip LED due to the increased reflectivity of the dielectric based mirror.

Monolithic integration of a vertical cavity surface emitting laser and a metal semiconductor field effect transistor

NASA Astrophysics Data System (ADS)

Yang, Y. J.; Dziura, T. G.; Bardin, T.; Wang, S. C.; Fernandez, R.; Liao, Andrew S. H.

1993-02-01

Monolithic integration of a vertical cavity surface emitting laser (VCSEL) and a metal semiconductor field effect transistor (MESFET) is reported for the first time. The epitaxial layers for both GaAs VCSELs and MESFETs are grown on an n-type GaAs substrate by molecular-beam epitaxy at the same time. The VCSELs with a 10-micron diam active region exhibit an average threshold current (Ith) of 6 mA and a continuous wave (CW) maximum power of 1.1 mW. The MESFETs with a 3-micron gate length have a transconductance of 50 mS/mm. The laser output is modulated by the gate voltage of the MESFETs and exhibits an optical/electrical conversion factor of 0.5 mW/V.

Non-Epitaxial Thin-Film Indium Phosphide Photovoltaics: Growth, Devices, and Cost Analysis

NASA Astrophysics Data System (ADS)

Zheng, Maxwell S.

In recent years, the photovoltaic market has grown significantly as module prices have continued to come down. Continued growth of the field requires higher efficiency modules at lower manufacturing costs. In particular, higher efficiencies reduce the area needed for a given power output, thus reducing the downstream balance of systems costs that scale with area such as mounting frames, installation, and soft costs. Cells and modules made from III-V materials have the highest demonstrated efficiencies to date but are not yet at the cost level of other thin film technologies, which has limited their large-scale deployment. There is a need for new materials growth, processing and fabrication techniques to address this major shortcoming of III-V semiconductors. Chapters 2 and 3 explore growth of InP on non-epitaxial Mo substrates by MOCVD and CSS, respectively. The results from these studies demonstrate that InP optoelectronic quality is maintained even by growth on non-epitaxial metal substrates. Structural characterization by SEM and XRD show stoichiometric InP can be grown in complete thin films on Mo. Photoluminescence measurements show peak energies and widths to be similar to those of reference wafers of similar doping concentrations. In chapter 4 the TF-VLS growth technique is introduced and cells fabricated from InP produced by this technique are characterized. The TF-VLS method results in lateral grain sizes of >500 mum and exhibits superior optoelectronic quality. First generation devices using a n-TiO2 window layer along with p-type TF-VLS grown InP have reached ˜12.1% power conversion efficiency under 1 sun illumination with VOC of 692 mV, JSC of 26.9 mA/cm2, and FF of 65%. The cells are fabricated using all non-epitaxial processing. Optical measurements show the InP in these cells have the potential to support a higher VOC of ˜795 mV, which can be achieved by improved device design. Chapter 5 describes a cost analysis of a manufacturing process using an InP cell as the active layer in a monolithically integrated module. Importantly, TF-VLS growth avoids the hobbles of traditional growth: the epitaxial wafer substrate, low utilization efficiency of expensive metalorganic precursors, and high capital depreciation costs due to low throughput. Production costs are projected to be 0.76/W(DC) for the benchmark case of 12% efficient modules and would decrease to 0.40/W(DC) for the long-term potential case of 24% efficient modules.

Effects of Light Exposure on Dopant Incorporation and Migration in MBE-Grown GaAs(001)

NASA Astrophysics Data System (ADS)

Sanders, Charlotte E.; Beaton, D. A.; Alberi, K.

2015-03-01

Light-stimulated epitaxy of II-VI semiconducting materials is known to reduce crystalline defect density and enhance substitutional dopant incorporation relative to traditional ``dark'' epitaxial growth. These effects have been speculated to arise from photon-adatom interactions at the growth front, and from involvement in bonding processes by photogenerated carriers; however, a conclusive explanation of the observed effects has yet to be found. We are revisiting this topic, attempting to clarify the mechanisms of light-stimulated epitaxy and to explore its effects on the class of III-V materials. Here we report an ongoing investigation into dopant incorporation and migration in MBE-grown GaAs(001) when the growth front is irradiated during deposition. On the basis of our preliminary findings, and by comparing our new results with results previously obtained for light-stimulated effects on doping of II-VI systems, we can begin to draw conclusions about the mechanisms underlying light-stimulated epitaxy and their potential utility to MBE growth of complex multilayer structures. This work was supported by the DOE Office of Science, Basic Energy Sciences, under contract DE-AC36-08G028308.

Epitaxial ferromagnetic oxide thin films on silicon with atomically sharp interfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Coux, P. de; CEMES-CNRS, 29 rue Jeanne Marvig, BP 94347, Toulouse Cedex 4; Bachelet, R.

A bottleneck in the integration of functional oxides with silicon, either directly grown or using a buffer, is the usual formation of an amorphous interfacial layer. Here, we demonstrate that ferromagnetic CoFe{sub 2}O{sub 4} films can be grown epitaxially on Si(111) using a Y{sub 2}O{sub 3} buffer layer, and remarkably the Y{sub 2}O{sub 3}/Si(111) interface is stable and remains atomically sharp. CoFe{sub 2}O{sub 4} films present high crystal quality and high saturation magnetization.

Epitaxial growth of GaSb on V-grooved Si (001) substrates with an ultrathin GaAs stress relaxing layer

NASA Astrophysics Data System (ADS)

Li, Qiang; Lai, Billy; Lau, Kei May

2017-10-01

We report epitaxial growth of GaSb nano-ridge structures and planar thin films on V-groove patterned Si (001) substrates by leveraging the aspect ratio trapping technique. GaSb was deposited on {111} Si facets of the V-shaped trenches using metal-organic chemical vapor deposition with a 7 nm GaAs growth initiation layer. Transmission electron microscopy analysis reveals the critical role of the GaAs layer in providing a U-shaped surface for subsequent GaSb epitaxy. A network of misfit dislocations was uncovered at the GaSb/GaAs hetero-interface. We studied the evolution of the lattice relaxation as the growth progresses from closely pitched GaSb ridges to coalesced thin films using x-ray diffraction. The omega rocking curve full-width-at-half-maximum of the resultant GaSb thin film is among the lowest values reported by molecular beam epitaxy, substantiating the effectiveness of the defect necking mechanism. These results thus present promising opportunities for the heterogeneous integration of devices based on 6.1 Å family compound semiconductors.

Epitaxial integration of CoFe2O4 thin films on Si (001) surfaces using TiN buffer layers

NASA Astrophysics Data System (ADS)

Prieto, Pilar; Marco, José F.; Prieto, José E.; Ruiz-Gomez, Sandra; Perez, Lucas; del Real, Rafael P.; Vázquez, Manuel; de la Figuera, Juan

2018-04-01

Epitaxial cobalt ferrite thin films with strong in-plane magnetic anisotropy have been grown on Si (001) substrates using a TiN buffer layer. The epitaxial films have been grown by ion beam sputtering using either metallic, CoFe2, or ceramic, CoFe2O4, targets. X-ray diffraction (XRD) and Rutherford spectrometry (RBS) in random and channeling configuration have been used to determine the epitaxial relationship CoFe2O4 [100]/TiN [100]/Si [100]. Mössbauer spectroscopy, in combination with XRD and RBS, has been used to determine the composition and structure of the cobalt ferrite thin films. The TiN buffer layer induces a compressive strain in the cobalt ferrite thin films giving rise to an in-plane magnetic anisotropy. The degree of in-plane anisotropy depends on the lattice mismatch between CoFe2O4 and TiN, which is larger for CoFe2O4 thin films grown on the reactive sputtering process with ceramic targets.

Defect-mediated room temperature ferromagnetism in vanadium dioxide thin films

NASA Astrophysics Data System (ADS)

Yang, Tsung-Han; Nori, Sudhakar; Zhou, Honghui; Narayan, Jagdish

2009-09-01

High quality epitaxial undoped vanadium oxide (VO2) thin films on c-plane sapphire (0001) substrate have been grown using pulsed laser deposition technique. The as-grown films exhibited excellent structural and transport properties without requiring further annealing treatments for these oxygen-deficient oxide films. The epitaxial growth has been achieved via domain matching epitaxy, where matching of integral multiples of planes occurs across the film-substrate interface. The magnetic properties of vanadium oxide (VO2) films investigated at different temperatures in the range of 10-360 K showed significant magnetic hysteresis as well as saturation of the magnetic moment. The origin of ferromagnetic properties with an estimated Curie temperature above 500 K is discussed in the absence of magnetic impurities in VO2 thin films as determined by x-ray photoelectron spectroscopy, x-ray diffraction, and transmission electron microscopy.

Role of microstructures on the M1-M2 phase transition in epitaxial VO2 thin films

PubMed Central

Ji, Yanda; Zhang, Yin; Gao, Min; Yuan, Zhen; Xia, Yudong; Jin, Changqing; Tao, Bowan; Chen, Chonglin; Jia, Quanxi; Lin, Yuan

2014-01-01

Vanadium dioxide (VO2) with its unique sharp resistivity change at the metal-insulator transition (MIT) has been extensively considered for the near-future terahertz/infrared devices and energy harvesting systems. Controlling the epitaxial quality and microstructures of vanadium dioxide thin films and understanding the metal-insulator transition behaviors are therefore critical to novel device development. The metal-insulator transition behaviors of the epitaxial vanadium dioxide thin films deposited on Al2O3 (0001) substrates were systematically studied by characterizing the temperature dependency of both Raman spectrum and Fourier transform infrared spectroscopy. Our findings on the correlation between the nucleation dynamics of intermediate monoclinic (M2) phase with microstructures will open a new avenue for the design and integration of advanced heterostructures with controllable multifunctionalities for sensing and imaging system applications. PMID:24798056

Novel high-resolution VGA QWIP detector

NASA Astrophysics Data System (ADS)

Kataria, H.; Asplund, C.; Lindberg, A.; Smuk, S.; Alverbro, J.; Evans, D.; Sehlin, S.; Becanovic, S.; Tinghag, P.; Höglund, L.; Sjöström, F.; Costard, E.

2017-02-01

Continuing with its legacy of producing high performance infrared detectors, IRnova introduces its high resolution LWIR IDDCA (Integrated Detector Dewar Cooler assembly) based on QWIP (quantum well infrared photodetector) technology. The Focal Plane Array (FPA) has 640×512 pixels, with small (15μm) pixel pitch, and is based on the FLIRIndigo ISC0403 Readout Integrated Circuit (ROIC). The QWIP epitaxial structures are grown by metal-organic vapor phase epitaxy (MOVPE) at IRnova. Detector stability and response uniformity inherent to III/V based material will be demonstrated in terms of high performing detectors. Results showing low NETD at high frame rate will be presented. This makes it one of the first 15μm pitch QWIP based LWIR IDDCA commercially available on the market. High operability and stability of our other QWIP based products will also be shared.

Wafer scale millimeter-wave integrated circuits based on epitaxial graphene in high data rate communication.

PubMed

Habibpour, Omid; He, Zhongxia Simon; Strupinski, Wlodek; Rorsman, Niklas; Zirath, Herbert

2017-02-01

In recent years, the demand for high data rate wireless communications has increased dramatically, which requires larger bandwidth to sustain multi-user accessibility and quality of services. This can be achieved at millimeter wave frequencies. Graphene is a promising material for the development of millimeter-wave electronics because of its outstanding electron transport properties. Up to now, due to the lack of high quality material and process technology, the operating frequency of demonstrated circuits has been far below the potential of graphene. Here, we present monolithic integrated circuits based on epitaxial graphene operating at unprecedented high frequencies (80-100 GHz). The demonstrated circuits are capable of encoding/decoding of multi-gigabit-per-second information into/from the amplitude or phase of the carrier signal. The developed fabrication process is scalable to large wafer sizes.

Optical Material Characterization Using Microdisk Cavities

NASA Astrophysics Data System (ADS)

Michael, Christopher P.

Since Jack Kilby recorded his "Monolithic Idea" for integrated circuits in 1958, microelectronics companies have invested billions of dollars in developing the silicon material system to increase performance and reduce cost. For decades, the industry has made Moore's Law, concerning cost and transistor density, a self-fulfilling prophecy by integrating technical and material requirements vertically down their supply chains and horizontally across competitors in the market. At recent technology nodes, the unacceptable scaling behavior of copper interconnects has become a major design constraint by increasing latency and power consumption---more than 50% of the power consumed by high speed processors is dissipated by intrachip communications. Optical networks at the chip scale are a potential low-power high-bandwidth replacement for conventional global interconnects, but the lack of efficient on-chip optical sources has remained an outstanding problem despite significant advances in silicon optoelectronics. Many material systems are being researched, but there is no ideal candidate even though the established infrastructure strongly favors a CMOS-compatible solution. This thesis focuses on assessing the optical properties of materials using microdisk cavities with the intention to advance processing techniques and materials relevant to silicon photonics. Low-loss microdisk resonators are chosen because of their simplicity and long optical path lengths. A localized photonic probe is developed and characterized that employs a tapered optical-fiber waveguide, and it is utilized in practical demonstrations to test tightly arranged devices and to help prototype new fabrication methods. A case study in AlxGa1-xAs illustrates how the optical scattering and absorption losses can be obtained from the cavity-waveguide transmission. Finally, single-crystal Er2O3 epitaxially grown on silicon is analyzed in detail as a potential CMOS-compatable gain medium due to its high Er3+ density and the control offered by the precise epitaxy. The growth and fabrication methods are discussed. Spectral measurements at cryogenic and room temperatures show negligible background losses and resonant Er3+ absorption strong enough to produce cavity-polaritons that persist to above 361 K. Cooperative relaxation and upconversion limit the optical performance in the telecommunications bands by transferring the excitations to quenching sites or by further exciting the ions up to visible transitions. Future prospects and alternative applications for Er2O3 and other epitaxial rare-earth oxides are also considered.

Self-assembled Multilayers of Silica Nanospheres for Defect Reduction in Non- and Semipolar Gallium Nitride Epitaxial Layers

PubMed Central

2015-01-01

Non- and semipolar GaN have great potential to improve the efficiency of light emitting devices due to much reduced internal electric fields. However, heteroepitaxial GaN growth in these crystal orientations suffers from very high dislocation and stacking faults densities. Here, we report a facile method to obtain low defect density non- and semipolar heteroepitaxial GaN via selective area epitaxy using self-assembled multilayers of silica nanospheres (MSN). Nonpolar (11–20) and semipolar (11–22) GaN layers with high crystal quality have been achieved by epitaxial integration of the MSN and a simple one-step overgrowth process, by which both dislocation and basal plane stacking fault densities can be significantly reduced. The underlying defect reduction mechanisms include epitaxial growth through the MSN covered template, island nucleation via nanogaps in the MSN, and lateral overgrowth and coalescence above the MSN. InGaN/GaN multiple quantum wells structures grown on a nonpolar GaN/MSN template show more than 30-fold increase in the luminescence intensity compared to a control sample without the MSN. This self-assembled MSN technique provides a new platform for epitaxial growth of nitride semiconductors and offers unique opportunities for improving the material quality of GaN grown on other orientations and foreign substrates or heteroepitaxial growth of other lattice-mismatched materials. PMID:27065755

Growth temperature-dependent metal–insulator transition of vanadium dioxide epitaxial films on perovskite strontium titanate (111) single crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Liangxin; Zhao, Jiangtao; Hong, Bin

2016-04-14

Vanadium dioxide (VO{sub 2}) epitaxial films were grown on perovskite single-crystal strontium titanate (SrTiO{sub 3}) substrates by reactive radio-frequency magnetron sputtering. The growth temperature-dependent metal–insulator transition (MIT) behavior of the VO{sub 2} epitaxial films was then investigated. We found that the order of magnitude of resistance change across the MIT increased from 10{sup 2} to 10{sup 4} with increasing growth temperature. In contrast, the temperature of the MIT does not strongly depend on the growth temperature and is fairly stable at about 345 K. On one hand, the increasing magnitude of the MIT is attributed to the better crystallinity and thusmore » larger grain size in the (010)-VO{sub 2}/(111)-SrTiO{sub 3} epitaxial films at elevated temperature. On the other hand, the strain states do not change in the VO{sub 2} films deposited at various temperatures, resulting in stable V-V chains and V-O bonds in the VO{sub 2} epitaxial films. The accompanied orbital occupancy near the Fermi level is also constant and thus the MIT temperatures of VO{sub 2} films deposited at various temperatures are nearly the same. This work demonstrates that high-quality VO{sub 2} can be grown on perovskite substrates, showing potential for integration into oxide heterostructures and superlattices.« less

Diamagnetic to ferromagnetic switching in VO2 epitaxial thin films by nanosecond excimer laser treatment

NASA Astrophysics Data System (ADS)

Molaei, R.; Bayati, R.; Nori, S.; Kumar, D.; Prater, J. T.; Narayan, J.

2013-12-01

VO2(010)/NiO(111) epitaxial heterostructures were integrated with Si(100) substrates using a cubic yttria-stabilized zirconia (c-YSZ) buffer. The epitaxial alignment across the interfaces was determined to be VO2(010)‖NiO(111)‖c-YSZ(001)‖Si(001) and VO2[100]‖NiO⟨110⟩‖c-YSZ⟨100⟩‖Si⟨100⟩. The samples were subsequently treated by a single shot of a nanosecond KrF excimer laser. Pristine as-deposited film showed diamagnetic behavior, while laser annealed sample exhibited ferromagnetic behavior. The population of majority charge carriers (e-) and electrical conductivity increased by about two orders of magnitude following laser annealing. These observations are attributed to the introduction of oxygen vacancies into the VO2 thin films and the formation of V3+ defects.

Thermoelectric La-doped SrTiO3 epitaxial layers with single-crystal quality: from nano to micrometers

NASA Astrophysics Data System (ADS)

Apreutesei, Mihai; Debord, Régis; Bouras, Mohamed; Regreny, Philippe; Botella, Claude; Benamrouche, Aziz; Carretero-Genevrier, Adrian; Gazquez, Jaume; Grenet, Geneviève; Pailhès, Stéphane; Saint-Girons, Guillaume; Bachelet, Romain

2017-12-01

High-quality thermoelectric La0.2Sr0.8TiO3 (LSTO) films, with thicknesses ranging from 20 nm to 0.7 μm, have been epitaxially grown on SrTiO3(001) substrates by enhanced solid-source oxide molecular-beam epitaxy. All films are atomically flat (with rms roughness < 0.2 nm), with low mosaicity (<0.1°), and present very low electrical resistivity (<5 × 10-4 Ω cm at room temperature), one order of magnitude lower than standard commercial Nb-doped SrTiO3 single-crystalline substrate. The conservation of transport properties within this thickness range has been confirmed by thermoelectric measurements where Seebeck coefficients of approximately -60 μV/K have been recorded for all films. These LSTO films can be integrated on Si for non-volatile memory structures or opto-microelectronic devices, functioning as transparent conductors or thermoelectric elements.

Effects of La-doped BaSnO3epitaxial electrode on the ferroelectric properties of BaTiO3

NASA Astrophysics Data System (ADS)

Lee, Hahoon; Kim, Young Mo; Kim, Youjung; Shin, Juyeon; Char, Kookrin

In order to integrate the newly discovered high-mobility perovskite semiconductor BaSnO3 with a ferroelectric perovskite, we have grown epitaxial ferroelectric BaTiO3 (BTO) on top of the 4 % La-doped BaSnO3 (BLSO). X-ray diffraction measurement suggests that the BTO film on top of BLSO electrode is tensilely strained due to the larger lattice constant of BLSO. An all epitaxial sandwich structure of BLSO/BTO/BLSO was fabricated in order to measure the ferroelectric properties of the BTO under tensile strain. The polarization-electric field (P-E) hysteresis curve will be discussed from the viewpoint of the tensile strain. In addition, the breakdown field will be measured to evaluate the potential of BTO for a gate oxide on top of BLSO. Samsung science and technology foundation.

Novel Plasmonic Materials and Nanodevices for Integrated Quantum Photonics

NASA Astrophysics Data System (ADS)

Shalaginov, Mikhail Y.

Light-matter interaction is the foundation for numerous important quantum optical phenomena, which may be harnessed to build practical devices with higher efficiency and unprecedented functionality. Nanoscale engineering is seen as a fruitful avenue to significantly strengthen light-matter interaction and also make quantum optical systems ultra-compact, scalable, and energy efficient. This research focuses on color centers in diamond that share quantum properties with single atoms. These systems promise a path for the realization of practical quantum devices such as nanoscale sensors, single-photon sources, and quantum memories. In particular, we explored an intriguing methodology of utilizing nanophotonic structures, such as hyperbolic metamaterials, nanoantennae, and plasmonic waveguides, to improve the color centers performance. We observed enhancement in the color center's spontaneous emission rate, emission directionality, and cooperativity over a broad optical frequency range. Additionally, we studied the effect of plasmonic environments on the spin-readout sensitivity of color centers. The use of CMOS-compatible epitaxially grown plasmonic materials in the design of these nanophotonic structures promises a new level of performance for a variety of integrated room-temperature quantum devices based on diamond color centers.

Abbreviated epitaxial growth mode (AGM) method for reducing cost and improving quality of LEDs and lasers

DOEpatents

Tansu, Nelson; Chan, Helen M; Vinci, Richard P; Ee, Yik-Khoon; Biser, Jeffrey

2013-09-24

The use of an abbreviated GaN growth mode on nano-patterned AGOG sapphire substrates, which utilizes a process of using 15 nm low temperature GaN buffer and bypassing etch-back and recovery processes during epitaxy, enables the growth of high-quality GaN template on nano-patterned AGOG sapphire. The GaN template grown on nano-patterned AGOG sapphire by employing abbreviated growth mode has two orders of magnitude lower threading dislocation density than that of conventional GaN template grown on planar sapphire. The use of abbreviated growth mode also leads to significant reduction in cost of the epitaxy. The growths and characteristics of InGaN quantum wells (QWs) light emitting diodes (LEDs) on both templates were compared. The InGaN QWs LEDs grown on the nano-patterned AGOG sapphire demonstrated at least a 24% enhancement of output power enhancement over that of LEDs grown on conventional GaN templates.

Epitaxial growth of InGaN nanowire arrays for light emitting diodes.

PubMed

Hahn, Christopher; Zhang, Zhaoyu; Fu, Anthony; Wu, Cheng Hao; Hwang, Yun Jeong; Gargas, Daniel J; Yang, Peidong

2011-05-24

Significant synthetic challenges remain for the epitaxial growth of high-quality InGaN across the entire compositional range. One strategy to address these challenges has been to use the nanowire geometry because of its strain relieving properties. Here, we demonstrate the heteroepitaxial growth of In(x)Ga(1-x)N nanowire arrays (0.06 ≤ x ≤ 0.43) on c-plane sapphire (Al(2)O(3)(001)) using a halide chemical vapor deposition (HCVD) technique. Scanning electron microscopy and X-ray diffraction characterization confirmed the long-range order and epitaxy of vertically oriented nanowires. Structural characterization by transmission electron microscopy showed that single crystalline nanowires were grown in the ⟨002⟩ direction. Optical properties of InGaN nanowire arrays were investigated by absorption and photoluminescence measurements. These measurements show the tunable direct band gap properties of InGaN nanowires into the yellow-orange region of the visible spectrum. To demonstrate the utility of our HCVD method for implementation into devices, LEDs were fabricated from In(x)Ga(1-x)N nanowires epitaxially grown on p-GaN(001). Devices showed blue (x = 0.06), green (x = 0.28), and orange (x = 0.43) electroluminescence, demonstrating electrically driven color tunable emission from this p-n junction.

Microstructure of epitaxial ferroelectric/metal oxide electrode thin film heterostructures on LaAlO{sub 3} and silicon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ghonge, S.G.; Goo, E.; Ramesh, R.

1994-12-31

TEM and X-ray diffraction studies of PZT, PLZT, lead titanate and bismuth titanate ferroelectric thin films and YBa{sub 2}Cu{sub 3}O{sub 7{minus}x}(YBCO), Bi{sub 2}Sr{sub 2}CaCu{sub 2}O{sub 8}(BSCCO) and La{sub 0.5}Sr{sub 0.5}CoO{sub 3}(LSCO) electrically conductive oxide thin films, that are sequentially deposited by pulsed laser ablation, show that these films may be deposited epitaxially onto LaAlO{sub 3}(LAO) or Si substrates. The conductive oxides are promising candidates for use is electrodes in place of metal electrodes in integrated ferroelectric device applications. The oxide electrodes are more chemically compatible with the ferroelectric films. High resolution electron microscopy his been used to investigate the interfacemore » between the ferroelectric and metal oxide thin films and no reaction was detected. Epitaxial growth is possible due to the similar crystal structures and the small lattice mismatch. The lattice mismatch that is present causes the domains in the ferroelectric films to be preferentially oriented and in the case of lead titanate, the film is single domain. These films may also have potential applications in integrated optical devices.« less

Ultra-Low Dark Current HgCdTe Detector in SWIR for Space Applications

NASA Astrophysics Data System (ADS)

Cervera, C.; Boulade, O.; Gravrand, O.; Lobre, C.; Guellec, F.; Sanson, E.; Ballet, P.; Santailler, J. L.; Moreau, V.; Zanatta, J. P.; Fieque, B.; Castelein, P.

2017-10-01

This paper presents recent developments at Commissariat à l'Energie atomique, Laboratoire d'Electronique et de Technologie de l'Information infrared laboratory on processing and characterization of p-on- n HgCdTe (MCT) planar infrared focal plane arrays (FPAs) in short-wave infrared (SWIR) spectral band for the astrophysics applications. These FPAs have been grown using both liquid phase epitaxy and molecular beam epitaxy on a lattice-matched CdZnTe substrate. This technology exhibits lower dark current and lower series resistance in comparison with n-on- p vacancy-doped architecture and is well adapted for low flux detection or high operating temperature. This architecture has been evaluated for space applications in long-wave infrared and very-long-wave infrared spectral bands with cut-off wavelengths from 10 μm up to 17 μm at 78 K and is now evaluated for the SWIR range. The metallurgical nature of the absorbing layer is also examined and both molecular beam epitaxy and liquid phase epitaxy have been investigated. Electro-optical characterizations have been performed on individual photodiodes from test arrays, whereas dark current investigation has been performed with a fully functional readout integrated circuit dedicated to low flux operations.

Room-temperature codeposition growth technique for pinhole reduction in epitaxial CoSi2 on Si (111)

NASA Technical Reports Server (NTRS)

Lin, T. L.; Fathauer, R. W.; Grunthaner, P. J.; D'Anterroches, C.

1988-01-01

A solid-phase epitaxy has been developed for the growth of CoSi2 films on Si (111) with no observable pinholes (1000/sq cm detection limit). The technique utilizes room-temperature codeposition of Co and Si in stoichiometric ratio, followed by the deposition of an amorphous Si capping layer and subsequent in situ annealing at 550-600 C. CoSi2 films grown without the Si cap are found to have pinhole densities of (1-10) x 10 to the 7th/sq cm when annealed at similar temperatures. A CF4 plasma-etching technique was used to increase the visibility of the pinholes in the silicide layer.

Guided Growth of Horizontal ZnSe Nanowires and their Integration into High-Performance Blue-UV Photodetectors.

PubMed

Oksenberg, Eitan; Popovitz-Biro, Ronit; Rechav, Katya; Joselevich, Ernesto

2015-07-15

Perfectly aligned horizontal ZnSe nano-wires are obtained by guided growth, and easily integrated into high-performance blue-UV photodetectors. Their crystal phase and crystallographic orientation are controlled by the epitaxial relations with six different sapphire planes. Guided growth paves the way for the large-scale integration of nanowires into optoelectronic devices. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Vapor-solid-solid grown Ge nanowires at integrated circuit compatible temperature by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Zhu, Zhongyunshen; Song, Yuxin; Zhang, Zhenpu; Sun, Hao; Han, Yi; Li, Yaoyao; Zhang, Liyao; Xue, Zhongying; Di, Zengfeng; Wang, Shumin

2017-09-01

We demonstrate Au-assisted vapor-solid-solid (VSS) growth of Ge nanowires (NWs) by molecular beam epitaxy at the substrate temperature of ˜180 °C, which is compatible with the temperature window for Si-based integrated circuit. Low temperature grown Ge NWs hold a smaller size, similar uniformity, and better fit with Au tips in diameter, in contrast to Ge NWs grown at around or above the eutectic temperature of Au-Ge alloy in the vapor-liquid-solid (VLS) growth. Six ⟨110⟩ growth orientations were observed on Ge (110) by the VSS growth at ˜180 °C, differing from only one vertical growth direction of Ge NWs by the VLS growth at a high temperature. The evolution of NWs dimension and morphology from the VLS growth to the VSS growth is qualitatively explained by analyzing the mechanism of the two growth modes.

Wafer scale millimeter-wave integrated circuits based on epitaxial graphene in high data rate communication

PubMed Central

Habibpour, Omid; He, Zhongxia Simon; Strupinski, Wlodek; Rorsman, Niklas; Zirath, Herbert

2017-01-01

In recent years, the demand for high data rate wireless communications has increased dramatically, which requires larger bandwidth to sustain multi-user accessibility and quality of services. This can be achieved at millimeter wave frequencies. Graphene is a promising material for the development of millimeter-wave electronics because of its outstanding electron transport properties. Up to now, due to the lack of high quality material and process technology, the operating frequency of demonstrated circuits has been far below the potential of graphene. Here, we present monolithic integrated circuits based on epitaxial graphene operating at unprecedented high frequencies (80–100 GHz). The demonstrated circuits are capable of encoding/decoding of multi-gigabit-per-second information into/from the amplitude or phase of the carrier signal. The developed fabrication process is scalable to large wafer sizes. PMID:28145513

High quality factor GaAs-based photonic crystal microcavities by epitaxial re-growth.

PubMed

Prieto, Ivan; Herranz, Jesús; Wewior, Lukasz; González, Yolanda; Alén, Benito; González, Luisa; Postigo, Pablo A

2013-12-16

We investigate L7 photonic crystal microcavities (PCMs) fabricated by epitaxial re-growth of GaAs pre-patterned substrates, containing InAs quantum dots. The resulting PCMs show hexagonal shaped nano-holes due to the development of preferential crystallographic facets during the re-growth step. Through a careful control of the fabrication processes, we demonstrate that the photonic modes are preserved throughout the process. The quality factor (Q) of the photonic modes in the re-grown PCMs strongly depends on the relative orientation between photonic lattice and crystallographic directions. The optical modes of the re-grown PCMs preserve the linear polarization and, for the most favorable orientation, a 36% of the Q measured in PCMs fabricated by the conventional procedure is observed, exhibiting values up to ~6000. The results aim to the future integration of site-controlled QDs with high-Q PCMs for quantum photonics and quantum integrated circuits.

Facility for low-temperature spin-polarized-scanning tunneling microscopy studies of magnetic/spintronic materials prepared in situ by nitride molecular beam epitaxy.

PubMed

Lin, Wenzhi; Foley, Andrew; Alam, Khan; Wang, Kangkang; Liu, Yinghao; Chen, Tianjiao; Pak, Jeongihm; Smith, Arthur R

2014-04-01

Based on the interest in, as well as exciting outlook for, nitride semiconductor based structures with regard to electronic, optoelectronic, and spintronic applications, it is compelling to investigate these systems using the powerful technique of spin-polarized scanning tunneling microscopy (STM), a technique capable of achieving magnetic resolution down to the atomic scale. However, the delicate surfaces of these materials are easily corrupted by in-air transfers, making it unfeasible to study them in stand-alone ultra-high vacuum STM facilities. Therefore, we have carried out the development of a hybrid system including a nitrogen plasma assisted molecular beam epitaxy/pulsed laser epitaxy facility for sample growth combined with a low-temperature, spin-polarized scanning tunneling microscope system. The custom-designed molecular beam epitaxy growth system supports up to eight sources, including up to seven effusion cells plus a radio frequency nitrogen plasma source, for epitaxially growing a variety of materials, such as nitride semiconductors, magnetic materials, and their hetero-structures, and also incorporating in situ reflection high energy electron diffraction. The growth system also enables integration of pulsed laser epitaxy. The STM unit has a modular design, consisting of an upper body and a lower body. The upper body contains the coarse approach mechanism and the scanner unit, while the lower body accepts molecular beam epitaxy grown samples using compression springs and sample skis. The design of the system employs two stages of vibration isolation as well as a layer of acoustic noise isolation in order to reduce noise during STM measurements. This isolation allows the system to effectively acquire STM data in a typical lab space, which during its construction had no special and highly costly elements included, (such as isolated slabs) which would lower the environmental noise. The design further enables tip exchange and tip coating without breaking vacuum, and convenient visual access to the sample and tip inside a superconducting magnet cryostat. A sample/tip handling system is optimized for both the molecular beam epitaxy growth system and the scanning tunneling microscope system. The sample/tip handing system enables in situ STM studies on epitaxially grown samples, and tip exchange in the superconducting magnet cryostat. The hybrid molecular beam epitaxy and low temperature scanning tunneling microscopy system is capable of growing semiconductor-based hetero-structures with controlled accuracy down to a single atomic-layer and imaging them down to atomic resolution.

Study of structural properties of cubic InN films on GaAs(001) substrates by molecular beam epitaxy and migration enhanced epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Casallas-Moreno, Y. L.; Perez-Caro, M.; Gallardo-Hernandez, S.

InN epitaxial films with cubic phase were grown by rf-plasma-assisted molecular beam epitaxy (RF-MBE) on GaAs(001) substrates employing two methods: migration-enhanced epitaxy (MEE) and conventional MBE technique. The films were synthesized at different growth temperatures ranging from 490 to 550 Degree-Sign C, and different In beam fluxes (BEP{sub In}) ranging from 5.9 Multiplication-Sign 10{sup -7} to 9.7 Multiplication-Sign 10{sup -7} Torr. We found the optimum conditions for the nucleation of the cubic phase of the InN using a buffer composed of several thin layers, according to reflection high-energy electron diffraction (RHEED) patterns. Crystallographic analysis by high resolution X-ray diffraction (HR-XRD)more » and RHEED confirmed the growth of c-InN by the two methods. We achieved with the MEE method a higher crystal quality and higher cubic phase purity. The ratio of cubic to hexagonal components in InN films was estimated from the ratio of the integrated X-ray diffraction intensities of the cubic (002) and hexagonal (1011) planes measured by X-ray reciprocal space mapping (RSM). For MEE samples, the cubic phase of InN increases employing higher In beam fluxes and higher growth temperatures. We have obtained a cubic purity phase of 96.4% for a film grown at 510 Degree-Sign C by MEE.« less

Micro-opto-mechanical devices and systems using epitaxial lift off

NASA Technical Reports Server (NTRS)

Camperi-Ginestet, C.; Kim, Young W.; Wilkinson, S.; Allen, M.; Jokerst, N. M.

1993-01-01

The integration of high quality, single crystal thin film gallium arsenide (GaAs) and indium phosphide (InP) based photonic and electronic materials and devices with host microstructures fabricated from materials such as silicon (Si), glass, and polymers will enable the fabrication of the next generation of micro-opto-mechanical systems (MOMS) and optoelectronic integrated circuits. Thin film semiconductor devices deposited onto arbitrary host substrates and structures create hybrid (more than one material) near-monolithic integrated systems which can be interconnected electrically using standard inexpensive microfabrication techniques such as vacuum metallization and photolithography. These integrated systems take advantage of the optical and electronic properties of compound semiconductor devices while still using host substrate materials such as silicon, polysilicon, glass and polymers in the microstructures. This type of materials optimization for specific tasks creates higher performance systems than those systems which must use trade-offs in device performance to integrate all of the function in a single material system. The low weight of these thin film devices also makes them attractive for integration with micromechanical devices which may have difficulty supporting and translating the full weight of a standard device. These thin film devices and integrated systems will be attractive for applications, however, only when the development of low cost, high yield fabrication and integration techniques makes their use economically feasible. In this paper, we discuss methods for alignment, selective deposition, and interconnection of thin film epitaxial GaAs and InP based devices onto host substrates and host microstructures.

Van der Waals epitaxial growth and optoelectronics of large-scale WSe2/SnS2 vertical bilayer p-n junctions.

PubMed

Yang, Tiefeng; Zheng, Biyuan; Wang, Zhen; Xu, Tao; Pan, Chen; Zou, Juan; Zhang, Xuehong; Qi, Zhaoyang; Liu, Hongjun; Feng, Yexin; Hu, Weida; Miao, Feng; Sun, Litao; Duan, Xiangfeng; Pan, Anlian

2017-12-04

High-quality two-dimensional atomic layered p-n heterostructures are essential for high-performance integrated optoelectronics. The studies to date have been largely limited to exfoliated and restacked flakes, and the controlled growth of such heterostructures remains a significant challenge. Here we report the direct van der Waals epitaxial growth of large-scale WSe 2 /SnS 2 vertical bilayer p-n junctions on SiO 2 /Si substrates, with the lateral sizes reaching up to millimeter scale. Multi-electrode field-effect transistors have been integrated on a single heterostructure bilayer. Electrical transport measurements indicate that the field-effect transistors of the junction show an ultra-low off-state leakage current of 10 -14 A and a highest on-off ratio of up to 10 7 . Optoelectronic characterizations show prominent photoresponse, with a fast response time of 500 μs, faster than all the directly grown vertical 2D heterostructures. The direct growth of high-quality van der Waals junctions marks an important step toward high-performance integrated optoelectronic devices and systems.

Epitaxial growth of high quality InP on Si substrates: The role of InAs/InP quantum dots as effective dislocation filters

NASA Astrophysics Data System (ADS)

Shi, Bei; Li, Qiang; Lau, Kei May

2018-05-01

Monolithic integration of InP on a Si platform ideally facilitates on-chip light sources in silicon photonic applications. In addition to the well-developed hybrid bonding techniques, the direct epitaxy method is spawning as a more strategic and potentially cost-effective approach to monolithically integrate InP-based telecom lasers. To minimize the unwanted defects within the InP crystal, we explore multiple InAs/InP quantum dots as dislocation filters. The high quality InP buffer is thus obtained, and the dislocation filtering effects of the quantum dots are directly examined via both plan-view and cross-sectional transmission electron microscopy, along with room-temperature photoluminescence. The defect density on the InP surface was reduced to 3 × 108/cm2, providing an improved optical property of active photonic devices on Si substrates. This work offers a novel solution to advance large-scale integration of InP on Si, which is beneficial to silicon-based long-wavelength lasers in telecommunications.

Molecular Beam Epitaxy Growth of AlGaAs/GaAs Vertical Cavity Surface Emitting Lasers and the Performance of PIN Photodetector/Vertical Cavity Surface Emitting Laser Integrated Structures

NASA Astrophysics Data System (ADS)

Wang, Y. H.; Hasnain, G.; Tai, K.; Wynn, J. D.; Weir, B. E.; Choquette, K. D.; Cho, A. Y.

1991-12-01

An all-epitaxial planar top emitting AlGaAs/GaAs multi-quantum well laser is fabricated and characterized. The constructed vertical cavity surface emitting laser (VCSEL) consists of GaAs/Al0.2Ga0.8As (100/80 Å) quantum wells sandwiched between two doped distributed Bragg reflectors characterized by a two-step composition profile. Two Ga and two Al cells are used to facilitate the growth of mirror profile. The gain-guided VCSEL is found to generate continuous wave at a characteristic temperature of 210°K up to 90°C, and can be amplitude modulated at frequencies above 5 GHz. Thresholds as low as 2 mA, and a CW power more than 1.5 mW, are obtained at room temperature. Monolithic integration of a PIN photodetector on top of the VCSEL is demonstrated and discussed. The integrated photodetector shows an effective linear responsivity to the laser emission of 0.25 A/W.

Processing of Superconductor-Normal-Superconductor Josephson Edge Junctions

NASA Technical Reports Server (NTRS)

Kleinsasser, A. W.; Barner, J. B.

1997-01-01

The electrical behavior of epitaxial superconductor-normal-superconductor (SNS) Josephson edge junctions is strongly affected by processing conditions. Ex-situ processes, utilizing photoresist and polyimide/photoresist mask layers, are employed for ion milling edges for junctions with Yttrium-Barium-Copper-Oxide (YBCO) electrodes and primarily Co-doped YBCO interlayers.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Scigaj, M.; Chao, C. H.; Gázquez, J.

The integration of epitaxial BaTiO 3 films on silicon, combining c-orientation, surface flatness, and high ferroelectric polarization is of main interest towards its use in memory devices. This combination of properties has been only achieved so far by using yttria-stabilized zirconia buffer layers. Here, the all-perovskite BaTiO 3/LaNiO 3/SrTiO 3 heterostructure is grown monolithically on Si(001). The BaTiO 3 films are epitaxial and c-oriented and present low surface roughness and high remnant ferroelectric polarization around 6 μC/cm 2. Lastly, this result paves the way towards the fabrication of lead-free BaTiO 3 ferroelectric memories on silicon platforms.

Van der Waals Epitaxy of Functional Oxide Heterostructures

NASA Astrophysics Data System (ADS)

Chu, Ying-Hao

In the diligent pursuit of low-power consumption, multifunctional, and environmentally friendly electronics, more sophisticated requirements on functional materials are on demand. Recently, the discovery of 2D layered materials has created a revolution to this field. Pioneered by graphene, these new 2D materials exhibit abundant unusual physical phenomena that is undiscovered in bulk forms. These materials are characterized with their layer form and almost pure 2D electronic behavior. The confinement of charge and heat transport at such ultrathin planes offers possibilities to overcome the bottleneck of present device development in thickness limitation, and thus push the technologies into next generation. Van der Waals epitaxy, an epitaxial growth method to combine 2D and 3D materials, is one of current reliable manufacturing processes to fabricate 2D materials by growing these 2D materials epitaxially on 3D materials. Then, transferring the 2D materials to the substrates for practical applications. In the mean time, van der Waals epitaxy has also been used to create free-standing 3D materials by growing 3D materials on 2D materials and then removing them from 2D materials since the interfacial boding between 2D and 3D materials should be weak van der Waals bonds. In this study, we intend to take the same concept, but to integrate a family of functional materials in order to open new avenue to flexible electronics. Due to the interplay of lattice, charge, orbital, and spin degrees of freedom, correlated electrons in oxides generate a rich spectrum of competing phases and physical properties. Recently, lots of studies have suggested that oxide heterostructures provide a powerful route to create and manipulate the degrees of freedom and offer new possibilities for next generation devices, thus create a new playground for researchers to investigate novel physics and the emergence of fascinating states of condensed matter. In this talk, we use a 2D layered material as the substrate. And we take several oxides as examples to demonstrate a pathway to integrate 3D functional oxides on 2D layered materials.

Near infrared group IV optoelectronics and novel pre-cursors for CVD epitaxy

NASA Astrophysics Data System (ADS)

Hazbun, Ramsey Michael

Near infrared and mid infrared optoelectronic devices have become increasingly important for the telecommunications, security, and medical imaging industries. The addition of nitrogen to III-V alloys has been widely studied as a method of modifying the band gap for mid infrared (IR) applications. In xGa1-xSb1-y Ny/InAs strained-layer superlattices with type-II (staggered) energy offsets on GaSb substrates, were modeled using eight-band k˙p simulations to analyze the superlattice miniband energies. Three different zero-stress strain balance conditions are reported: fixed superlattice period thickness, fixed InAs well thickness, and fixed InxGa1-xSb 1-yNy barrier thickness. Optoelectronics have traditionally been the realm of III-V semiconductors due to their direct band gap, while integrated circuit chips have been the realm of Group IV semiconductors such as silicon because of its relative abundance and ease of use. Recently the alloying of Sn with Ge and Si has been shown to allow direct band-gap light emission. This presents the exciting prospect of integrating optoelectronics into current Group IV chip fabrication facilities. However, new approaches for low temperature growth are needed to realize these new SiGeSn alloys. Silicon-germanium epitaxy via ultra-high vacuum chemical vapor deposition has the advantage of allowing low process temperatures. Deposition processes are sensitive to substrate surface preparation and the time delay between oxide removal and epitaxial growth. A new monitoring process utilizing doped substrates and defect decoration etching is demonstrated to have controllable and unique sensitivity to interfacial contaminants. Doped substrates were prepared and subjected to various loading conditions prior to the growth of typical Si/SiGe bilayers. The defect densities were correlated to the concentration of interfacial oxygen suggesting this monitoring process may be an effective complement to monitoring via secondary ion mass spectrometry measurements. The deposition of silicon using tetrasilane as a vapor pre-cursor is described for an ultra-high vacuum chemical vapor deposition tool. The growth rates and morphology of the Si epitaxial layers over a range of temperatures and pressures are presented. In order to understand the suitability of tetrasilane for the growth of SiGe and SiGeSn alloys, the layers were characterized using transmission electron microscopy, x-ray diffraction, spectroscopic ellipsometry, atomic force microscopy, and secondary ion mass spectrometry. To date no n-type doping has been demonstrated in GeSn alloys grown via MBE. A GaP decomposition source was used to grow n-type phosphorus doped GeSn layers on p- Ge substrates. Doping concentrations were calibrated using SIMS measurements. GeSn/Ge heterojunction diodes were grown and fabricated into mesa devices. Diode parameters were extracted from current-voltage measurements. The effects of P and Sn concentrations, metallization, and mesa geometry on device performance are all discussed.

Ultraviolet Electrically Injected Light Sources With Epitaxial ZnO-Based Heterojunctions

DTIC Science & Technology

2007-08-01

ohmic contacts to ZnO , UV photoconductors, and thin film transistors . The integration of ferroelectric oxide thin films with ZnO was also investigated... transistors . The integration of ferroelectric oxide thin films with ZnO was also investigated, as a potential means of locally inverting ZnO to p-type, and to...low contact resistivity ......................... 8 ZnO Thin Film Transistors

Theoretical and experimental study of highly textured GaAs on silicon using a graphene buffer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alaskar, Yazeed; Arafin, Shamsul; Lin, Qiyin

2015-09-01

A novel heteroepitaxial growth technique, quasi-van der Waals epitaxy, promises the ability to deposit three-dimensional GaAs materials on silicon using two-dimensional graphene as a buffer layer by overcoming the lattice and thermal expansion mismatch. In this study, density functional theory (DFT) simulations were performed to understand the interactions at the GaAs/graphene hetero-interface as well as the growth orientations of GaAs on graphene. To develop a better understanding of the molecular beam epitaxy-grown GaAs films on graphene, samples were characterized by x-ray diffraction (..theta..-2..theta.. scan, ..omega..-scan, grazing incidence XRD and pole figure measurement) and transmission electron microscopy. The realizations of smoothmore » GaAs films with a strong (111) oriented fiber-texture on graphene/silicon using this deposition technique are a milestone towards an eventual demonstration of the epitaxial growth of GaAs on silicon, which is necessary for integrated photonics application.« less

Strain relaxation in single crystal SrTiO3 grown on Si (001) by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Choi, Miri; Posadas, Agham; Dargis, Rytis; Shih, Chih-Kang; Demkov, Alexander A.; Triyoso, Dina H.; David Theodore, N.; Dubourdieu, Catherine; Bruley, John; Jordan-Sweet, Jean

2012-03-01

An epitaxial layer of SrTiO3 grown directly on Si may be used as a pseudo-substrate for the integration of perovskite oxides onto silicon. When SrTiO3 is initially grown on Si (001), it is nominally compressively strained. However, by subsequent annealing in oxygen at elevated temperature, an SiOx interlayer can be formed which alters the strain state of SrTiO3. We report a study of strain relaxation in SrTiO3 films grown on Si by molecular beam epitaxy as a function of annealing time and oxygen partial pressure. Using a combination of x-ray diffraction, reflection high energy electron diffraction, and transmission electron microscopy, we describe the process of interfacial oxidation and strain relaxation of SrTiO3 on Si (001). Understanding the process of strain relaxation of SrTiO3 on silicon will be useful for controlling the SrTiO3 lattice constant for lattice matching with functional oxide overlayers.

Structural analysis of as-deposited and annealed low-temperature gallium arsenide

NASA Astrophysics Data System (ADS)

Matyi, R. J.; Melloch, M. R.; Woodall, J. M.

1993-04-01

The structure of GaAs grown at low substrate temperatures (LT-GaAs) by molecular beam epitaxy has been studied using high resolution X-ray diffraction methods. Double crystal rocking curves from the as-deposited LT-GaAs show well defined interference fringes, indicating a high level of structural perfection. Triple crystal diffraction analysis of the as-deposited sample showed significantly less diffuse scattering near the LT-GaAs 004 reciprocal lattice point compared with the substrate 004 reciprocal lattice point, suggesting that despite the incorporation of approximately 1% excess arsenic, the epitaxial layer had superior crystalline perfection than did the GaAs substrate. Triple crystal scans of annealed LT-GaAs showed an increase in the integrated diffuse intensity by approximately a factor of three as the anneal temperature was increased from 700 to 900°C. Analogous to the effects of SiO2 precipitates in annealed Czochralski silicon, the diffuse intensity is attributed to distortions in the epitaxial LT-GaAs lattice by arsenic precipitates.

Thermoelectric La-doped SrTiO3 epitaxial layers with single-crystal quality: from nano to micrometers

PubMed Central

Apreutesei, Mihai; Debord, Régis; Bouras, Mohamed; Regreny, Philippe; Botella, Claude; Benamrouche, Aziz; Carretero-Genevrier, Adrian; Gazquez, Jaume; Grenet, Geneviève; Pailhès, Stéphane; Saint-Girons, Guillaume; Bachelet, Romain

2017-01-01

Abstract High-quality thermoelectric La0.2Sr0.8TiO3 (LSTO) films, with thicknesses ranging from 20 nm to 0.7 μm, have been epitaxially grown on SrTiO3(001) substrates by enhanced solid-source oxide molecular-beam epitaxy. All films are atomically flat (with rms roughness < 0.2 nm), with low mosaicity (<0.1°), and present very low electrical resistivity (<5 × 10−4 Ω cm at room temperature), one order of magnitude lower than standard commercial Nb-doped SrTiO3 single-crystalline substrate. The conservation of transport properties within this thickness range has been confirmed by thermoelectric measurements where Seebeck coefficients of approximately –60 μV/K have been recorded for all films. These LSTO films can be integrated on Si for non-volatile memory structures or opto-microelectronic devices, functioning as transparent conductors or thermoelectric elements. PMID:28740558

Thermoelectric La-doped SrTiO3 epitaxial layers with single-crystal quality: from nano to micrometers.

PubMed

Apreutesei, Mihai; Debord, Régis; Bouras, Mohamed; Regreny, Philippe; Botella, Claude; Benamrouche, Aziz; Carretero-Genevrier, Adrian; Gazquez, Jaume; Grenet, Geneviève; Pailhès, Stéphane; Saint-Girons, Guillaume; Bachelet, Romain

2017-01-01

High-quality thermoelectric La 0.2 Sr 0.8 TiO 3 (LSTO) films, with thicknesses ranging from 20 nm to 0.7 μm, have been epitaxially grown on SrTiO 3 (001) substrates by enhanced solid-source oxide molecular-beam epitaxy. All films are atomically flat (with rms roughness < 0.2 nm), with low mosaicity (<0.1°), and present very low electrical resistivity (<5 × 10 -4 Ω cm at room temperature), one order of magnitude lower than standard commercial Nb-doped SrTiO 3 single-crystalline substrate. The conservation of transport properties within this thickness range has been confirmed by thermoelectric measurements where Seebeck coefficients of approximately -60 μV/K have been recorded for all films. These LSTO films can be integrated on Si for non-volatile memory structures or opto-microelectronic devices, functioning as transparent conductors or thermoelectric elements.

Growth of boron-doped few-layer graphene by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Soares, G. V.; Nakhaie, S.; Heilmann, M.; Riechert, H.; Lopes, J. M. J.

2018-04-01

We investigated the growth of boron-doped few-layer graphene on α-Al2O3 (0001) substrates by molecular beam epitaxy using two different growth approaches: one where boron was provided during the entire graphene synthesis and the second where boron was provided only during the second half of the graphene growth run. Electrical measurements show a higher p-type carrier concentration for samples fabricated utilizing the second approach, with a remarkable modulation in the carrier concentration of almost two orders of magnitude in comparison to the pristine graphene film. The results concerning the influence of the boron flux at different growth stages of graphene on the electrical and physicochemical properties of the films are presented.

Upright and Inverted Single-Junction GaAs Solar Cells Grown by Hydride Vapor Phase Epitaxy

DOE PAGES

Simon, John; Schulte, Kevin L.; Jain, Nikhil; ...

2016-10-19

Hydride vapor phase epitaxy (HVPE) is a low-cost alternative to conventional metal-organic vapor phase epitaxy (MOVPE) growth of III-V solar cells. In this work, we show continued improvement of the performance of HVPE-grown single-junction GaAs solar cells. We show over an order of magnitude improvement in the interface recombination velocity between GaAs and GaInP layers through the elimination of growth interrupts, leading to increased short-circuit current density and open-circuit voltage compared with cells with interrupts. One-sun conversion efficiencies as high as 20.6% were achieved with this improved growth process. Solar cells grown in an inverted configuration that were removed frommore » the substrate showed nearly identical performance to on-wafer cells, demonstrating the viability of HVPE to be used together with conventional wafer reuse techniques for further cost reduction. As a result, these devices utilized multiple heterointerfaces, showing the potential of HVPE for the growth of complex and high-quality III-V devices.« less

Structural evolution of epitaxial SrCoO x films near topotactic phase transition

DOE PAGES

Jeen, Hyoung Jeen; Lee, Ho Nyung

2015-12-18

Control of oxygen stoichiometry in complex oxides via topotactic phase transition is an interesting avenue to not only modifying the physical properties, but utilizing in many energy technologies, such as energy storage and catalysts. However, detailed structural evolution in the close proximity of the topotactic phase transition in multivalent oxides has not been much studied. In this work, we used strontium cobaltites (SrCoO x) epitaxially grown by pulsed laser epitaxy (PLE) as a model system to study the oxidation-driven evolution of the structure, electronic, and magnetic properties. We grew coherently strained SrCoO 2.5thin films and performed post-annealing at various temperaturesmore » for topotactic conversion into the perovskite phase (SrCoO 3-δ). We clearly observed significant changes in electronic transport, magnetism, and microstructure near the critical temperature for the topotactic transformation from the brownmillerite to the perovskite phase. Furthermore, the overall crystallinity was well maintained without much structural degradation, indicating that topotactic phase control can be a useful tool to control the physical properties repeatedly via redox reactions.« less

Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture

NASA Astrophysics Data System (ADS)

Deen, David A.; Storm, David F.; Scott Katzer, D.; Bass, R.; Meyer, David J.

2016-08-01

A dual-channel AlN/GaN high electron mobility transistor (HEMT) architecture is demonstrated that leverages ultra-thin epitaxial layers to suppress surface-related gate lag. Two high-density two-dimensional electron gas (2DEG) channels are utilized in an AlN/GaN/AlN/GaN heterostructure wherein the top 2DEG serves as a quasi-equipotential that screens potential fluctuations resulting from distributed surface and interface states. The bottom channel serves as the transistor's modulated channel. Dual-channel AlN/GaN heterostructures were grown by molecular beam epitaxy on free-standing hydride vapor phase epitaxy GaN substrates. HEMTs fabricated with 300 nm long recessed gates demonstrated a gate lag ratio (GLR) of 0.88 with no degradation in drain current after bias stressed in subthreshold. These structures additionally achieved small signal metrics ft/fmax of 27/46 GHz. These performance results are contrasted with the non-recessed gate dual-channel HEMT with a GLR of 0.74 and 82 mA/mm current collapse with ft/fmax of 48/60 GHz.

BiFeO3 epitaxial thin films and devices: past, present and future

NASA Astrophysics Data System (ADS)

Sando, D.; Barthélémy, A.; Bibes, M.

2014-11-01

The celebrated renaissance of the multiferroics family over the past ten years has also been that of its most paradigmatic member, bismuth ferrite (BiFeO3). Known since the 1960s to be a high temperature antiferromagnet and since the 1970s to be ferroelectric, BiFeO3 only had its bulk ferroic properties clarified in the mid-2000s. It is however the fabrication of BiFeO3 thin films and their integration into epitaxial oxide heterostructures that have fully revealed its extraordinarily broad palette of functionalities. Here we review the first decade of research on BiFeO3 films, restricting ourselves to epitaxial structures. We discuss how thickness and epitaxial strain influence not only the unit cell parameters, but also the crystal structure, illustrated for instance by the discovery of the so-called T-like phase of BiFeO3. We then present its ferroelectric and piezoelectric properties and their evolution near morphotropic phase boundaries. Magnetic properties and their modification by thickness and strain effects, as well as optical parameters, are covered. Finally, we highlight various types of devices based on BiFeO3 in electronics, spintronics, and optics, and provide perspectives for the development of further multifunctional devices for information technology and energy harvesting.

Stabilizing Ir(001) Epitaxy on Yttria-Stabilized Zirconia Using a Thin Ir Seed Layer Grown by Pulsed Laser Deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fan, Lisha; Jacobs, Christopher B.; Rouleau, Christopher M.

In this paper, we demonstrate the reproducible epitaxial growth of 100 nm thick Ir(001) films on a heteroepitaxial stack consisting of 5 nm Ir and 100 nm yttria-stabilized zirconia (YSZ) grown on Si(001) substrates. It is shown that a 5 nm thick Ir layer grown by pulsed laser deposition in the same chamber as the YSZ film without breaking the vacuum is the key to stabilizing Ir(001) epitaxial growth. Growth of the Ir seed layer with pure (001) orientation occurs only in a narrow growth temperature window from 550 to 750 °C, and the fraction of Ir(111) increases at substratemore » temperatures outside of this window. The Ir seed layer prevents exposure of the YSZ film to air during sample transfer and enables highly reproducible Ir(001) heteroepitaxy on YSZ buffered Si(001). In contrast, if Ir is grown directly on a bare YSZ layer that was exposed to ambient conditions, the films are prone to change orientation to (111). These results reveal that preserving the chemical and structural purity of the YSZ surface is imperative for achieving Ir(001) epitaxy. The narrow range of the mosaic spread values from eight experiments demonstrates the high yield and high reproducibility of Ir(001) heteroepitaxy by this approach. Lastly, the improved Ir(001) epitaxial growth method is of great significance for integrating a variety of technologically important materials such as diamond, graphene, and functional oxides on a Si platform.« less

Stabilizing Ir(001) Epitaxy on Yttria-Stabilized Zirconia Using a Thin Ir Seed Layer Grown by Pulsed Laser Deposition

DOE PAGES

Fan, Lisha; Jacobs, Christopher B.; Rouleau, Christopher M.; ...

2016-11-18

In this paper, we demonstrate the reproducible epitaxial growth of 100 nm thick Ir(001) films on a heteroepitaxial stack consisting of 5 nm Ir and 100 nm yttria-stabilized zirconia (YSZ) grown on Si(001) substrates. It is shown that a 5 nm thick Ir layer grown by pulsed laser deposition in the same chamber as the YSZ film without breaking the vacuum is the key to stabilizing Ir(001) epitaxial growth. Growth of the Ir seed layer with pure (001) orientation occurs only in a narrow growth temperature window from 550 to 750 °C, and the fraction of Ir(111) increases at substratemore » temperatures outside of this window. The Ir seed layer prevents exposure of the YSZ film to air during sample transfer and enables highly reproducible Ir(001) heteroepitaxy on YSZ buffered Si(001). In contrast, if Ir is grown directly on a bare YSZ layer that was exposed to ambient conditions, the films are prone to change orientation to (111). These results reveal that preserving the chemical and structural purity of the YSZ surface is imperative for achieving Ir(001) epitaxy. The narrow range of the mosaic spread values from eight experiments demonstrates the high yield and high reproducibility of Ir(001) heteroepitaxy by this approach. Lastly, the improved Ir(001) epitaxial growth method is of great significance for integrating a variety of technologically important materials such as diamond, graphene, and functional oxides on a Si platform.« less

Integration of strained and relaxed silicon thin films on silicon wafers via engineered oxide heterostructures: Experiment and theory

NASA Astrophysics Data System (ADS)

Seifarth, O.; Dietrich, B.; Zaumseil, P.; Giussani, A.; Storck, P.; Schroeder, T.

2010-10-01

Strained and relaxed single crystalline Si on insulator systems is an important materials science approach for future Si-based nanoelectronics. Layer transfer techniques are the dominating global integration approach over the whole wafer system but are difficult to scale down for local integration purposes limited to the area of the future device. In this respect, the heteroepitaxy approach by two simple subsequent epitaxial deposition steps of the oxide and the Si thin film is a promising way. We introduce tailored (Pr2O3)1-x(Y2O3)x oxide heterostructures on Si(111) as flexible heteroepitaxy concept for the integration of either strained or fully relaxed single crystalline Si thin films. Two different buffer concepts are explored by a combined experimental and theoretical study. First, the growth of fully relaxed single crystalline Si films is achieved by the growth of mixed PrYO3 insulators on Si(111) whose lattice constant is matched to Si. Second, isomorphic oxide-on-oxide epitaxy is exploited to grow strained Si films on lattice mismatched Y2O3/Pr2O3/Si(111) support systems. A thickness dependent multilayer model, based on Matthew's approach for strain relaxation by misfit dislocations, is presented to describe the experimental data.

The Formation, Transport Properties and Microstructure of 45 Degrees (001) Tilt Grain Boundaries in Yttrium BARIUM(2) COPPER(3) OXYGEN(7-X) Thin Films

NASA Astrophysics Data System (ADS)

Vuchic, Boris Vukan

1995-01-01

Most high angle grain boundaries in high-T _{c} superconductors exhibit weak link behavior. The Josephson-like properties of these grain boundaries can be used for many device applications such as superconducting quantum interference devices (SQUIDs). The structure-property relationship of different types of 45 ^circ (001) YBa_2 Cu_3O_{7-x} thin film grain boundary junctions are examined to study their weak link nature. A technique, termed sputter-induced epitaxy, is developed to form 45^circ (001) tilt grain boundaries in YBa_2Cu _3O_{7-x} thin films on (100) MgO substrates. A low voltage ion bombardment pre-growth substrate treatment is used to modify the epitaxial orientation relationship between the thin film and the substrate in selected regions. By modifying the orientation of the thin film, grain boundary junctions can be placed in any configuration on the substrate. A variety of pre-growth sputtering conditions in conjunction with atomic force microscopy and Rutherford backscatter spectrometry are used to determine the role of the ions in modifying the substrate surface. Sputter-induced epitaxy is extended to a multilayer MgO/LaAlO_3 substrate, allowing integration of the sputter -induced epitaxy junctions into multilayer structures. The low temperature transport properties of the sputter-induced epitaxy junctions and a set of bi-epitaxial grain boundaries are studied. Individual grain boundaries are isolated and characterized for resistance vs. temperature, current vs. voltage as a function of temperature and magnetic field behavior. Resistive and superconducting grain boundaries are compared. Microstructural analysis is performed using scanning electron microscopy, transmission electron microscopy and high resolution electron microscopy (HREM). Marked differences are observed in the microstructure of resistive and superconducting grain boundaries. HREM studies suggest the importance of the local atomic scale structure of the grain boundary in transport properties. A phenomenological grain boundary model is proposed to describe the structure -property relationship of the boundaries.

Magnetic x-ray dichroism in ultrathin epitaxial films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tobin, J.G.; Goodman, K.W.; Cummins, T.R.

1997-04-01

The authors have used Magnetic X-ray Linear Dichroism (MXLD) and Magnetic X-ray Circular Dichroism (MXCD) to study the magnetic properties of epitaxial overlayers in an elementally specific fashion. Both MXLD and MXCD Photoelectron Spectroscopy were performed in a high resolution mode at the Spectromicroscopy Facility of the ALS. Circular Polarization was obtained via the utilization of a novel phase retarder (soft x-ray quarter wave plate) based upon transmission through a multilayer film. The samples were low temperature Fe overlayers, magnetic alloy films of NiFe and CoNi, and Gd grown on Y. The authors results include a direct comparison of highmore » resolution angle resolved Photoelectron Spectroscopy performed in MXLD and MXCD modes as well as structural studies with photoelectron diffraction.« less

Strained-layer superlattice focal plane array having a planar structure

DOEpatents

Kim, Jin K [Albuquerque, NM; Carroll, Malcolm S [Albuquerque, NM; Gin, Aaron [Albuquerque, NM; Marsh, Phillip F [Lowell, MA; Young, Erik W [Albuquerque, NM; Cich, Michael J [Albuquerque, NM

2010-07-13

An infrared focal plane array (FPA) is disclosed which utilizes a strained-layer superlattice (SLS) formed of alternating layers of InAs and In.sub.xGa.sub.1-xSb with 0.ltoreq.x.ltoreq.0.5 epitaxially grown on a GaSb substrate. The FPA avoids the use of a mesa structure to isolate each photodetector element and instead uses impurity-doped regions formed in or about each photodetector for electrical isolation. This results in a substantially-planar structure in which the SLS is unbroken across the entire width of a 2-D array of the photodetector elements which are capped with an epitaxially-grown passivation layer to reduce or eliminate surface recombination. The FPA has applications for use in the wavelength range of 3-25 .mu.m.

Strained layer superlattice focal plane array having a planar structure

DOEpatents

Kim, Jin K; Carroll, Malcolm S; Gin, Aaron; Marsh, Phillip F; Young, Erik W; Cich, Michael J

2012-10-23

An infrared focal plane array (FPA) is disclosed which utilizes a strained-layer superlattice (SLS) formed of alternating layers of InAs and In.sub.xGa.sub.1-xSb with 0.ltoreq.x.ltoreq.0.5 epitaxially grown on a GaSb substrate. The FPA avoids the use of a mesa structure to isolate each photodetector element and instead uses impurity-doped regions formed in or about each photodetector for electrical isolation. This results in a substantially-planar structure in which the SLS is unbroken across the entire width of a 2-D array of the photodetector elements which are capped with an epitaxially-grown passivation layer to reduce or eliminate surface recombination. The FPA has applications for use in the wavelength range of 3-25 .mu.m.

Electrochemical Atomic Layer Epitaxy of Thin Film CdSe

NASA Astrophysics Data System (ADS)

Pham, L.; Kaleida, K.; Happek, U.; Mathe, M. K.; Vaidyanathan, R.; Stickney, J. L.; Radevic, M.

2002-10-01

Electrochemical atomic layer epitaxy (EC-ALE) is a current developmental technique for the fabrication of compound semiconductor thin films. The deposition of elements making up the compound utilizes surface limited reactions where the potential is less than that required for bulk growth. This growth method offers mono-atomic layer control, allowing the deposition of superlattices with sharp interfaces. Here we report on the EC-ALE formation of CdSe thin films on Au and Cu substrates using an automated flow cell system. The band gap was measured using IR absorption and photoconductivity and found to be consistent with the literature value of 1.74 eV at 300K and 1.85 eV at 20K. The stoichiometry of the thin film was confirmed with electron microprobe analysis and x-ray diffraction.

Elemental boron-doped p(+)-SiGe layers grown by molecular beam epitaxy for infrared detector applications

NASA Technical Reports Server (NTRS)

Lin, T. L.; George, T.; Jones, E. W.; Ksendzov, A.; Huberman, M. L.

1992-01-01

SiGe/Si heterojunction internal photoemission (HIP) detectors have been fabricated utilizing molecular beam epitaxy of p(+)-SiGe layers on p(-)-Si substrates. Elemental boron from a high-temperature effusion cell was used as the dopant source during MBE growth, and high doping concentrations have been achieved. Strong infrared absorption, mainly by free-carrier absorption, was observed for the degenerately doped SiGe layers. The use of elemental boron as the dopant source allows a low MBE growth temperature, resulting in improved crystalline quality and smooth surface morphology of the Si(0.7)Ge(0.3) layers. Nearly ideal thermionic emission dark current characteristics have been obtained. Photoresponse of the HIP detectors in the long-wavelength infrared regime has been demonstrated.

Artifacts for Calibration of Submicron Width Measurements

NASA Technical Reports Server (NTRS)

Grunthaner, Frank; Grunthaner, Paula; Bryson, Charles, III

2003-01-01

Artifacts that are fabricated with the help of molecular-beam epitaxy (MBE) are undergoing development for use as dimensional calibration standards with submicron widths. Such standards are needed for calibrating instruments (principally, scanning electron microscopes and scanning probe microscopes) for measuring the widths of features in advanced integrated circuits. Dimensional calibration standards fabricated by an older process that involves lithography and etching of trenches in (110) surfaces of single-crystal silicon are generally reproducible to within dimensional tolerances of about 15 nm. It is anticipated that when the artifacts of the present type are fully developed, their critical dimensions will be reproducible to within 1 nm. These artifacts are expected to find increasing use in the semiconductor-device and integrated- circuit industries as the width tolerances on semiconductor devices shrink to a few nanometers during the next few years. Unlike in the older process, one does not rely on lithography and etching to define the critical dimensions. Instead, one relies on the inherent smoothness and flatness of MBE layers deposited under controlled conditions and defines the critical dimensions as the thicknesses of such layers. An artifact of the present type is fabricated in two stages (see figure): In the first stage, a multilayer epitaxial wafer is grown on a very flat substrate. In the second stage, the wafer is cleaved to expose the layers, then the exposed layers are differentially etched (taking advantage of large differences between the etch rates of the different epitaxial layer materials). The resulting structure includes narrow and well-defined trenches and a shelf with thicknesses determined by the thicknesses of the epitaxial layers from which they were etched. Eventually, it should be possible to add a third fabrication stage in which durable, electronically inert artifacts could be replicated in diamondlike carbon from a master made by MBE and etching as described above.

From magic to technology: materials integration by wafer bonding

NASA Astrophysics Data System (ADS)

Dragoi, Viorel

2006-02-01

Wafer bonding became in the last decade a very powerful technology for MEMS/MOEMS manufacturing. Being able to offer a solution to overcome some problems of the standard processes used for materials integration (e.g. epitaxy, thin films deposition), wafer bonding is nowadays considered an important item in the MEMS engineer toolbox. Different principles governing the wafer bonding processes will be reviewed in this paper. Various types of applications will be presented as examples.

Thickness-modulated anisotropic ferromagnetism in Fe-doped epitaxial HfO2 thin films

NASA Astrophysics Data System (ADS)

Liu, Wenlong; Liu, Ming; Zhang, Ruyi; Ma, Rong; Wang, Hong

2017-10-01

Epitaxial tetragonal Fe-doped Hf0.95Fe0.05O2 (FHO) thin films with various thicknesses were deposited on (001)-oriented NdCaAlO4 (NCAO) substrates by using a pulsed laser deposition (PLD) system. The crystal structure and epitaxial nature of the FHO thin films were confirmed by typical x-ray diffraction (XRD) θ-2θ scan and reciprocal space mapping (RSM). The results indicate that two sets of lattice sites exist with two different crystal orientations [(001) and (100)] in the thicker FHO thin films. Further, the intensity of the (100) direction increases with the increase in thicknesses, which should have a significant effect on the anisotropic magnetization of the FHO thin films. Meanwhile, all the FHO thin films possess a tetragonal phase structure. An anisotropy behavior in magnetization has been observed in the FHO thin films. The anisotropic magnetization of the FHO thin films is slowly weakened as the thickness increases. Meanwhile, the saturation magnetization (Ms) of both in-plane and out-of-plane decreases with the increase in the thickness. The change in the anisotropic magnetization and Ms is attributed to the crystal lattice and the variation in the valence of Fe ions. These results indicate that the thickness-modulated anisotropic ferromagnetism of the tetragonal FHO epitaxial thin films is of potential use for the integration of metal-oxide semiconductors with spintronics.

Structure and Properties of VO2 and Titanium Dioxide Based Epitaxial Heterostructures Integrated with Silicon and Sapphire Substrates

NASA Astrophysics Data System (ADS)

Bayati, Mohammad Reza

The main focus of this study was placed on structure-property correlation in TiO2 and VO2 based epitaxial heterostructures where the photochemical and electrical properties were tuned through microstructural engineering. In the framework of domain matching epitaxy, epitaxial growth of TiO2 and VO2 heterostructures on different substrates were explained. The theta-2theta and ϕ scan X-ray diffraction measurements and detailed high resolution electron microscopy studies corroborated our understanding of the epitaxial growth and the crystallographic arrangement across the interfaces. The influence of the laser and substrate variables on structural characteristics of the films was investigated using X-ray photoelectron spectroscopy, room temperature photoluminescence spectroscopy, and UV-Vis spectrophotometry. In addition, morphological studies were performed by atomic force microscopy. Photochemical properties of the heterostructures were assessed through measuring surface wettability characteristics and photocatalytic reaction rate constant of degradation of 4-chlorophenol under ultraviolet and visible irradiations. We also studied electrical properties employing 4-probe measurement technique. The effect of post treatment processes, such as vacuum annealing and laser treatment, on structure and properties was investigated as well. The role of point defects and deviation from the stoichiometry on photochemical and electrical properties was addressed. In this research, TiO2 epilayers with controlled phase structure, defect content, and crystallographic alignments were grown on sapphire and silicon substrates. Integration with silicon was achieved using cubic and tetragonal yttria-stabilized zirconia buffer layers. I was able to tune the phase structure of the TiO2 based heterostructures from pure rutile to pure anatase and establish an epitaxial relationship across the interfaces in each case. These heterostructures were used for two different purposes. First, their application in environmental remediation was taken into account. The photochemical efficiency of the samples was evaluated under ultraviolet and visible illuminations. I was able to establish a correlation between the growth conditions and the photocatalytic activity of single crystalline TiO 2 thin films. Visible-light-responsive TiO2 films were fabricated via vacuum annealing of the samples where point defects, namely oxygen vacancies and titanium interstitial, are surmised to play a critical role. An ultrafast switching was observed in wetting characteristics of the single crystalline rutile TiO2 films from a hydrophobic state to a superhydrophilic state by single pulsed excimer laser annealing. It was observed that the laser annealing almost doubles the photocatalytic efficiency of the anatase epitaxial thin films. I was able to measure the photochemical properties of the rutile and the anatase TiO2 heterostructures in a controlled way due to the single crystalline nature of the films. Second, the rutile TiO2 epilayers with different out-of-plane orientations were deposited and used as a platform for VO2 based epitaxial heterostructures with the aim of manipulating of microstructure and electrical properties of the VO 2 films. Vanadium dioxide (VO2) is an interesting material due to the abrupt change in electrical resistivity and infrared transmittance at about 68 °C. The transition temperature can be tuned through microstructural engineering. It was the idea behind using rutile TiO2 with different crystallographic orientations as a template to tune the semiconductor to metal transition characteristics of the VO2 top layer. I successfully grew VO2(001), VO2(100), and VO2(2¯01) epitaxial thin films on TiO2(100)/c-sapphire, TiO2(101)/r-sapphire, and TiO2(001)/ m-sapphire platforms, respectively. It was observed that tetragonal phase of VO2 was stabilized at lower temperatures leading to a significant decrease in the semiconductor to metal transition temperature. In other words, we were able to tune the transition temperature of the VO 2 epitaxial heterostructures. This achievement introduces the VO 2 based single crystalline heterostructures as a promising candidate for a wide range of applications where different transition temperatures are required. The epitaxial relationships were established and atomic arrangement across the interfaces was studied in detail.

Long-Term Characterization of 6H-SiC Transistor Integrated Circuit Technology Operating at 500 C

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Spry, David J.; Chen, Liang-Yu; Chang, Carl W.; Beheim, Glenn M.; Okojie, Robert S.; Evans, Laura J.; Meredith Roger D.; Ferrier, Terry L.; Krasowski, Michael J.;

Substrate Temperature effect on the transition characteristics of Vanadium (IV) oxide

NASA Astrophysics Data System (ADS)

Yang, Tsung-Han; Wei, Wei; Jin, Chunming; Narayan, Jay

2008-10-01

One of the semiconductor to metal transition material (SMT) is Vanadium Oxide (VO2) which has a very sharp transition temperature close to 340 K as the crystal structure changes from monoclinic phase (semiconductor) into tetragonal phase (metal phase). We have grown high-quality epitaxial vanadium oxide (VO2) films on sapphire (0001) substrates by pulsed laser deposition for oxygen pressure 10-2torr and obtained interesting results without further annealing treatments. The epitaxial growth via domain matching epitaxy, where integral multiples of planes matched across the film-substrate interface. We were able to control the transition characteristics such as the sharpness (T), amplitude (A) of SMT transition and the width of thermal hysteresis (H) by altering the substrate temperature from 300 ^oC, 400 ^oC, 500 ^oC, and 600 ^oC. We use the XRD to identify the microstructure of film and measure the optical properties of film. Finally the transition characteristics is observed by the resistance with the increase of temperature by Van Der Pauw method from 25 to 100 ^oC to measure the electrical resistivity hystersis loop during the transition temperature.

All zinc-blende GaAs/(Ga,Mn)As core-shell nanowires with ferromagnetic ordering.

PubMed

Yu, Xuezhe; Wang, Hailong; Pan, Dong; Zhao, Jianhua; Misuraca, Jennifer; von Molnár, Stephan; Xiong, Peng

2013-04-10

Combining self-catalyzed vapor-liquid-solid growth of GaAs nanowires and low-temperature molecular-beam epitaxy of (Ga,Mn)As, we successfully synthesized all zinc-blende (ZB) GaAs/(Ga,Mn)As core-shell nanowires on Si(111) substrates. The ZB GaAs nanowire cores are first fabricated at high temperature by utilizing the Ga droplets as the catalyst and controlling the triple phase line nucleation, then the (Ga,Mn)As shells are epitaxially grown on the side facets of the GaAs core at low temperature. The growth window for the pure phase GaAs/(Ga,Mn)As core-shell nanowires is found to be very narrow. Both high-resolution transmission electron microscopy and scanning electron microscopy observations confirm that all-ZB GaAs/(Ga,Mn)As core-shell nanowires with smooth side surface are obtained when the Mn concentration is not more than 2% and the growth temperature is 245 °C or below. Magnetic measurements with different applied field directions provide strong evidence for ferromagnetic ordering in the all-ZB GaAs/(Ga,Mn)As nanowires. The hybrid nanowires offer an attractive platform to explore spin transport and device concepts in fully epitaxial all-semiconductor nanospintronic structures.

Measuring the dielectric and optical response of millimeter-scale amorphous and hexagonal boron nitride films grown on epitaxial graphene.

PubMed

Rigosi, Albert F; Hill, Heather M; Glavin, Nicholas R; Pookpanratana, Sujitra J; Yang, Yanfei; Boosalis, Alexander G; Hu, Jiuning; Rice, Anthony; Allerman, Andrew A; Nguyen, Nhan V; Hacker, Christina A; Elmquist, Randolph E; Hight Walker, Angela R; Newell, David B

2018-01-01

Monolayer epitaxial graphene (EG), grown on the Si face of SiC, is an advantageous material for a variety of electronic and optical applications. EG forms as a single crystal over millimeter-scale areas and consequently, the large scale single crystal can be utilized as a template for growth of other materials. In this work, we present the use of EG as a template to form millimeter-scale amorphous and hexagonal boron nitride ( a -BN and h -BN) films. The a -BN is formed with pulsed laser deposition and the h -BN is grown with triethylboron (TEB) and NH 3 precursors, making it the first metal organic chemical vapor deposition (MOCVD) process of this growth type performed on epitaxial graphene. A variety of optical and non-optical characterization methods are used to determine the optical absorption and dielectric functions of the EG, a -BN, and h -BN within the energy range of 1 eV to 8.5 eV. Furthermore, we report the first ellipsometric observation of high-energy resonant excitons in EG from the 4H polytype of SiC and an analysis on the interactions within the EG and h -BN heterostructure.

Te Monolayer-Driven Spontaneous van der Waals Epitaxy of Two-dimensional Pnictogen Chalcogenide Film on Sapphire.

PubMed

Hwang, Jae-Yeol; Kim, Young-Min; Lee, Kyu Hyoung; Ohta, Hiromichi; Kim, Sung Wng

2017-10-11

Demands on high-quality layer structured two-dimensional (2D) thin films such as pnictogen chalcogenides and transition metal dichalcogenides are growing due to the findings of exotic physical properties and potentials for device applications. However, the difficulties in controlling epitaxial growth and the unclear understanding of van der Waals epitaxy (vdWE) for a 2D chalcogenide film on a three-dimensional (3D) substrate have been major obstacles for the further advances of 2D materials. Here, we exploit the spontaneous vdWE of a high-quality 2D chalcogenide (Bi 0.5 Sb 1.5 Te 3 ) film by the chalcogen-driven surface reconstruction of a conventional 3D sapphire substrate. It is verified that the in situ formation of a pseudomorphic Te atomic monolayer on the surface of sapphire, which results in a dangling bond-free surface, allows the spontaneous vdWE of 2D chalcogenide film. Since this route uses the natural surface reconstruction of sapphire with chalcogen under vacuum condition, it can be scalable and easily utilized for the developments of various 2D chalcogenide vdWE films through conventional thin-film fabrication technologies.

Suppression of surface-originated gate lag by a dual-channel AlN/GaN high electron mobility transistor architecture

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deen, David A., E-mail: david.deen@alumni.nd.edu; Storm, David F.; Scott Katzer, D.

A dual-channel AlN/GaN high electron mobility transistor (HEMT) architecture is demonstrated that leverages ultra-thin epitaxial layers to suppress surface-related gate lag. Two high-density two-dimensional electron gas (2DEG) channels are utilized in an AlN/GaN/AlN/GaN heterostructure wherein the top 2DEG serves as a quasi-equipotential that screens potential fluctuations resulting from distributed surface and interface states. The bottom channel serves as the transistor's modulated channel. Dual-channel AlN/GaN heterostructures were grown by molecular beam epitaxy on free-standing hydride vapor phase epitaxy GaN substrates. HEMTs fabricated with 300 nm long recessed gates demonstrated a gate lag ratio (GLR) of 0.88 with no degradation in drain currentmore » after bias stressed in subthreshold. These structures additionally achieved small signal metrics f{sub t}/f{sub max} of 27/46 GHz. These performance results are contrasted with the non-recessed gate dual-channel HEMT with a GLR of 0.74 and 82 mA/mm current collapse with f{sub t}/f{sub max} of 48/60 GHz.« less

AlGaInAs EML having high extinction ratios fabricated by identical epitaxial layer technique

NASA Astrophysics Data System (ADS)

Deng, Qiufang; Guo, Lu; Liang, Song; Sun, Siwei; Xie, Xiao; Zhu, Hongliang; Wang, Wei

2018-04-01

AlGaInAs electroabsorption-modulated lasers (EMLs) fabricated by identical epitaxial layer technique are demonstrated. The EML device shows an infinite characteristic temperature when the temperature ranges from 20 oC to 30 oC. The integrated modulator has static extinction ratios of larger than 20 dB at a reverse bias voltage of - 2 V. The small signal modulation bandwidth of the modulator is larger than 11 GHz. At 10 Gb/s data modulation, the dynamic extinction ratio is about 9.5 dB in a back to back test configuration. Because only a simple fabrication procedure is needed, our EMLs are promising low cost light sources for optical fiber transmission applications.

Europium Silicide – a Prospective Material for Contacts with Silicon

PubMed Central

Averyanov, Dmitry V.; Tokmachev, Andrey M.; Karateeva, Christina G.; Karateev, Igor A.; Lobanovich, Eduard F.; Prutskov, Grigory V.; Parfenov, Oleg E.; Taldenkov, Alexander N.; Vasiliev, Alexander L.; Storchak, Vyacheslav G.

2016-01-01

Metal-silicon junctions are crucial to the operation of semiconductor devices: aggressive scaling demands low-resistive metallic terminals to replace high-doped silicon in transistors. It suggests an efficient charge injection through a low Schottky barrier between a metal and Si. Tremendous efforts invested into engineering metal-silicon junctions reveal the major role of chemical bonding at the interface: premier contacts entail epitaxial integration of metal silicides with Si. Here we present epitaxially grown EuSi2/Si junction characterized by RHEED, XRD, transmission electron microscopy, magnetization and transport measurements. Structural perfection leads to superb conductivity and a record-low Schottky barrier with n-Si while an antiferromagnetic phase invites spin-related applications. This development opens brand-new opportunities in electronics. PMID:27211700

Europium Silicide - a Prospective Material for Contacts with Silicon.

PubMed

Averyanov, Dmitry V; Tokmachev, Andrey M; Karateeva, Christina G; Karateev, Igor A; Lobanovich, Eduard F; Prutskov, Grigory V; Parfenov, Oleg E; Taldenkov, Alexander N; Vasiliev, Alexander L; Storchak, Vyacheslav G

2016-05-23

Metal-silicon junctions are crucial to the operation of semiconductor devices: aggressive scaling demands low-resistive metallic terminals to replace high-doped silicon in transistors. It suggests an efficient charge injection through a low Schottky barrier between a metal and Si. Tremendous efforts invested into engineering metal-silicon junctions reveal the major role of chemical bonding at the interface: premier contacts entail epitaxial integration of metal silicides with Si. Here we present epitaxially grown EuSi2/Si junction characterized by RHEED, XRD, transmission electron microscopy, magnetization and transport measurements. Structural perfection leads to superb conductivity and a record-low Schottky barrier with n-Si while an antiferromagnetic phase invites spin-related applications. This development opens brand-new opportunities in electronics.

Epitaxial growth of CZT(S,Se) on silicon

DOEpatents

Bojarczuk, Nestor A.; Gershon, Talia S.; Guha, Supratik; Shin, Byungha; Zhu, Yu

2016-03-15

Techniques for epitaxial growth of CZT(S,Se) materials on Si are provided. In one aspect, a method of forming an epitaxial kesterite material is provided which includes the steps of: selecting a Si substrate based on a crystallographic orientation of the Si substrate; forming an epitaxial oxide interlayer on the Si substrate to enhance wettability of the epitaxial kesterite material on the Si substrate, wherein the epitaxial oxide interlayer is formed from a material that is lattice-matched to Si; and forming the epitaxial kesterite material on a side of the epitaxial oxide interlayer opposite the Si substrate, wherein the epitaxial kesterite material includes Cu, Zn, Sn, and at least one of S and Se, and wherein a crystallographic orientation of the epitaxial kesterite material is based on the crystallographic orientation of the Si substrate. A method of forming an epitaxial kesterite-based photovoltaic device and an epitaxial kesterite-based device are also provided.

Novel Biomedical Devices Utilizing Light-Emitting Nanostructures

NASA Technical Reports Server (NTRS)

Goldman, Rachel S.

2004-01-01

As part of the NASA project, we are investigating the formation, properties, and performance of QD heterostructures, to be incorporated into a novel biomedical device for detecting bacteria and/or viruses in fluids on board space vehicles. We are presently synthesizing the epitaxial quantum dot structures using molecular beam epitaxy. We recently developed a method for controlling the arrangement of QDs, based upon a combination of buffer layer growth and controlled annealing sequences. This method is promising for producing arrangements of QDs with a locally well-controlled distribution of sizes. In the future, we plan to explore selective pre-patterning of the starting surface using focused ion-beam nanopatterning, which will enable us to precisely tune the compositions, sizes, and placement of the QDs, in order laterally tune the emission and detection wavelengths of QD based devices.

In-situ x-ray studies of compositional control during synthesis of LaGaO 3 by radio frequency-magnetron sputtering

DOE PAGES

Highland, Matthew J.; Fong, Dillon D.; Ju, Guangxu; ...

2015-08-28

In-situ synchrotron x-ray scattering has been used to monitor and control the synthesis of LaGaO 3 epitaxial thin films by 90° off-axis RF-magnetron sputtering. We compared films deposited from a single LaGaO 3 source with those prepared by alternating deposition from separate La 2O 3 and Ga 2O 3 sources. The conditions for growth of stoichiometric films were determined by real-time monitoring of secondary phase formation as well as from features in the diffuse scatter from island formation during synthesis. Our results provide atomic-scale insight into the mechanisms taking place during reactive epitaxial growth and demonstrate how in-situ techniques canmore » be utilized to achieve stoichiometric control in ultrathin films.« less

Monolithically integrated bacteriorhodopsin/semiconductor opto-electronic integrated circuit for a bio-photoreceiver.

PubMed

Xu, J; Bhattacharya, P; Váró, G

2004-03-15

The light-sensitive protein, bacteriorhodopsin (BR), is monolithically integrated with an InP-based amplifier circuit to realize a novel opto-electronic integrated circuit (OEIC) which performs as a high-speed photoreceiver. The circuit is realized by epitaxial growth of the field-effect transistors, currently used semiconductor device and circuit fabrication techniques, and selective area BR electro-deposition. The integrated photoreceiver has a responsivity of 175 V/W and linear photoresponse, with a dynamic range of 16 dB, with 594 nm photoexcitation. The dynamics of the photochemical cycle of BR has also been modeled and a proposed equivalent circuit simulates the measured BR photoresponse with good agreement.

Method of depositing an electrically conductive oxide buffer layer on a textured substrate and articles formed therefrom

DOEpatents

Paranthaman, M. Parans; Aytug, Tolga; Christen, David K.

2005-10-18

An article with an improved buffer layer architecture includes a substrate having a textured metal surface, and an electrically conductive lanthanum metal oxide epitaxial buffer layer on the surface of the substrate. The article can also include an epitaxial superconducting layer deposited on the epitaxial buffer layer. An epitaxial capping layer can be placed between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article includes providing a substrate with a metal surface and depositing on the metal surface a lanthanum metal oxide epitaxial buffer layer. The method can further include depositing a superconducting layer on the epitaxial buffer layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.

Method of depositing an electrically conductive oxide buffer layer on a textured substrate and articles formed therefrom

DOEpatents

Paranthaman, M. Parans; Aytug, Tolga; Christen, David K.

2003-09-09

An article with an improved buffer layer architecture includes a substrate having a textured metal surface, and an electrically conductive lanthanum metal oxide epitaxial buffer layer on the surface of the substrate. The article can also include an epitaxial superconducting layer deposited on the epitaxial buffer layer. An epitaxial capping layer can be placed between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article includes providing a substrate with a metal surface and depositing on the metal surface a lanthanum metal oxide epitaxial buffer layer. The method can further include depositing a superconducting layer on the epitaxial buffer layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.

Single-Crystal Thin Films of Cesium Lead Bromide Perovskite Epitaxially Grown on Metal Oxide Perovskite (SrTiO 3)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Jie; Morrow, Darien J.; Fu, Yongping

High-quality metal halide perovskite single crystals have low defect densities and excellent photophysical properties, yet thin films are the most sought after material geometry for optoelectronic devices. Perovskite single-crystal thin films (SCTFs) would be highly desirable for high-performance devices, but their growth remains challenging, particularly for inorganic metal halide perovskites. Herein, we report the facile vapor-phase epitaxial growth of cesium lead bromide perovskite (CsPbBr 3) continuous SCTFs with controllable micrometer thickness, as well as nanoplate arrays, on traditional oxide perovskite SrTiO 3(100) substrates. Heteroepitaxial single-crystal growth is enabled by the serendipitous incommensurate lattice match between these two perovskites, and overcomingmore » the limitation of island-forming Volmer–Weber crystal growth is critical for growing large-area continuous thin films. Time-resolved photoluminescence, transient reflection spectroscopy, and electrical transport measurements show that the CsPbBr 3 epitaxial thin film has a slow charge carrier recombination rate, low surface recombination velocity (10 4 cm s –1), and low defect density of 10 12 cm –3, which are comparable to those of CsPbBr 3 single crystals. This work suggests a general approach using oxide perovskites as substrates for heteroepitaxial growth of halide perovskites. Furthermore, the high-quality halide perovskite SCTFs epitaxially integrated with multifunctional oxide perovskites could open up opportunities for a variety of high-performance optoelectronics devices.« less

Single-Crystal Thin Films of Cesium Lead Bromide Perovskite Epitaxially Grown on Metal Oxide Perovskite (SrTiO 3)

DOE PAGES

Chen, Jie; Morrow, Darien J.; Fu, Yongping; ...

2017-09-05

High-quality metal halide perovskite single crystals have low defect densities and excellent photophysical properties, yet thin films are the most sought after material geometry for optoelectronic devices. Perovskite single-crystal thin films (SCTFs) would be highly desirable for high-performance devices, but their growth remains challenging, particularly for inorganic metal halide perovskites. Herein, we report the facile vapor-phase epitaxial growth of cesium lead bromide perovskite (CsPbBr 3) continuous SCTFs with controllable micrometer thickness, as well as nanoplate arrays, on traditional oxide perovskite SrTiO 3(100) substrates. Heteroepitaxial single-crystal growth is enabled by the serendipitous incommensurate lattice match between these two perovskites, and overcomingmore » the limitation of island-forming Volmer–Weber crystal growth is critical for growing large-area continuous thin films. Time-resolved photoluminescence, transient reflection spectroscopy, and electrical transport measurements show that the CsPbBr 3 epitaxial thin film has a slow charge carrier recombination rate, low surface recombination velocity (10 4 cm s –1), and low defect density of 10 12 cm –3, which are comparable to those of CsPbBr 3 single crystals. This work suggests a general approach using oxide perovskites as substrates for heteroepitaxial growth of halide perovskites. Furthermore, the high-quality halide perovskite SCTFs epitaxially integrated with multifunctional oxide perovskites could open up opportunities for a variety of high-performance optoelectronics devices.« less

Diamagnetism to ferromagnetism in Sr-substituted epitaxial BaTiO{sub 3} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singamaneni, Srinivasa Rao, E-mail: ssingam@ncsu.edu; Prater, John T.; Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695

2016-04-04

We report on the ferromagnetic-like behavior in otherwise diamagnetic BaTiO{sub 3} (BTO) thin films upon doping with non-magnetic element Sr having the composition Ba{sub 0.4}Sr{sub 0.6}TiO{sub 3} (BST). The epitaxial integration of BST (∼800 nm) thick films on Si (100) substrate was achieved using MgO (40 nm) and TiN (20 nm) as buffer layers to prepare BST/MgO/TiN/Si (100) heterostructure by pulsed laser deposition. The c-axis oriented and cube-on-cube epitaxial BST is formed on Si (100) as evidenced by the in-plane and out-of-plane X-ray diffraction. All the deposited films are relaxed through domain matching epitaxy paradigm as observed from X-ray diffraction pattern and A{submore » 1}TO{sub 3} mode (at 521.27 cm{sup −1}) of Raman spectra. As-deposited BST thin films reveal ferromagnetic-like properties, which persist up to 400 K. The magnetization decreases two-fold upon oxygen annealing. In contrast, as-deposited un-doped BTO films show diamagnetism. Electron spin resonance measurements reveal no evidence of external magnetic impurities. XRD and X-ray photoelectron spectroscopy spectra show significant changes influenced by Sr doping in BTO. The ferromagnetic-like behavior in BST could be due to the trapped electron donors from oxygen vacancies resulting from Sr-doping.« less

Monolithically Integrated InGaAs Nanowires on 3D Structured Silicon-on-Insulator as a New Platform for Full Optical Links.

PubMed

Kim, Hyunseok; Farrell, Alan C; Senanayake, Pradeep; Lee, Wook-Jae; Huffaker, Diana L

2016-03-09

Monolithically integrated III-V semiconductors on a silicon-on-insulator (SOI) platform can be used as a building block for energy-efficient on-chip optical links. Epitaxial growth of III-V semiconductors on silicon, however, has been challenged by the large mismatches in lattice constants and thermal expansion coefficients between epitaxial layers and silicon substrates. Here, we demonstrate for the first time the monolithic integration of InGaAs nanowires on the SOI platform and its feasibility for photonics and optoelectronic applications. InGaAs nanowires are grown not only on a planar SOI layer but also on a 3D structured SOI layer by catalyst-free metal-organic chemical vapor deposition. The precise positioning of nanowires on 3D structures, including waveguides and gratings, reveals the versatility and practicality of the proposed platform. Photoluminescence measurements exhibit that the composition of ternary InGaAs nanowires grown on the SOI layer has wide tunability covering all telecommunication wavelengths from 1.2 to 1.8 μm. We also show that the emission from an optically pumped single nanowire is effectively coupled and transmitted through an SOI waveguide, explicitly showing that this work lays the foundation for a new platform toward energy-efficient optical links.

GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies.

PubMed

Yoon, Jongseung; Jo, Sungjin; Chun, Ik Su; Jung, Inhwa; Kim, Hoon-Sik; Meitl, Matthew; Menard, Etienne; Li, Xiuling; Coleman, James J; Paik, Ungyu; Rogers, John A

2010-05-20

Compound semiconductors like gallium arsenide (GaAs) provide advantages over silicon for many applications, owing to their direct bandgaps and high electron mobilities. Examples range from efficient photovoltaic devices to radio-frequency electronics and most forms of optoelectronics. However, growing large, high quality wafers of these materials, and intimately integrating them on silicon or amorphous substrates (such as glass or plastic) is expensive, which restricts their use. Here we describe materials and fabrication concepts that address many of these challenges, through the use of films of GaAs or AlGaAs grown in thick, multilayer epitaxial assemblies, then separated from each other and distributed on foreign substrates by printing. This method yields large quantities of high quality semiconductor material capable of device integration in large area formats, in a manner that also allows the wafer to be reused for additional growths. We demonstrate some capabilities of this approach with three different applications: GaAs-based metal semiconductor field effect transistors and logic gates on plates of glass, near-infrared imaging devices on wafers of silicon, and photovoltaic modules on sheets of plastic. These results illustrate the implementation of compound semiconductors such as GaAs in applications whose cost structures, formats, area coverages or modes of use are incompatible with conventional growth or integration strategies.

MBE HgCdTe for HDVIP Devices: Horizontal Integration in the US HgCdTe FPA Industry

NASA Astrophysics Data System (ADS)

Aqariden, F.; Elsworth, J.; Zhao, J.; Grein, C. H.; Sivananthan, S.

2012-10-01

Molecular beam epitaxy (MBE) growth of HgCdTe offers the possibility of fabricating multilayer device structures with an almost unlimited choice of infrared sensor designs for focal-plane array (FPA) fabrication. HgCdTe offers two major advantages that explain its dominance in the infrared photon detector marketplace. The thermal generation rate per unit volume of the material is lower and the quantum efficiency for photon absorption in the infrared is higher in HgCdTe than in any competing material—it yields devices with quantum efficiencies as high as 0.99. Recently, EPIR Technologies and DRS Infrared Technologies agreed to collaborate and examine: (i) the feasibility of employing MBE HgCdTe in the fabrication of high-density vertically interconnected photodiodes (HDVIPs), which are usually fabricated with liquid-phase epitaxy material, and (ii) the potential benefits of horizontal integration, with EPIR supplying the MBE materials to DRS for device and array fabrication. The team designed and developed passivation-absorber-passivation structures that are heavily used by DRS. This paper provides an overview of the characteristics of HDVIP devices and arrays fabricated from MBE HgCdTe and the anticipated advantages of horizontal integration in the industry. Material growth, device fabrication, and test results are presented.

SiGe/Si Monolithically Integrated Amplifier Circuits

NASA Technical Reports Server (NTRS)

Katehi, Linda P. B.; Bhattacharya, Pallab

1998-01-01

With recent advance in the epitaxial growth of silicon-germanium heterojunction, Si/SiGe HBTs with high f(sub max) and f(sub T) have received great attention in MMIC applications. In the past year, technologies for mesa-type Si/SiGe HBTs and other lumped passive components with high resonant frequencies have been developed and well characterized for circuit applications. By integrating the micromachined lumped passive elements into HBT fabrication, multi-stage amplifiers operating at 20 GHz have been designed and fabricated.

High performance waveguide-coupled Ge-on-Si linear mode avalanche photodiodes.

PubMed

Martinez, Nicholas J D; Derose, Christopher T; Brock, Reinhard W; Starbuck, Andrew L; Pomerene, Andrew T; Lentine, Anthony L; Trotter, Douglas C; Davids, Paul S

2016-08-22

We present experimental results for a selective epitaxially grown Ge-on-Si separate absorption and charge multiplication (SACM) integrated waveguide coupled avalanche photodiode (APD) compatible with our silicon photonics platform. Epitaxially grown Ge-on-Si waveguide-coupled linear mode avalanche photodiodes with varying lateral multiplication regions and different charge implant dimensions are fabricated and their illuminated device characteristics and high-speed performance is measured. We report a record gain-bandwidth product of 432 GHz for our highest performing waveguide-coupled avalanche photodiode operating at 1510nm. Bit error rate measurements show operation with BER< 10^-12, in the range from -18.3 dBm to -12 dBm received optical power into a 50 Ω load and open eye diagrams with 13 Gbps pseudo-random data at 1550 nm.

SiGe nano-heteroepitaxy on Si and SiGe nano-pillars.

PubMed

Mastari, M; Charles, M; Bogumilowicz, Y; Thai, Q M; Pimenta-Barros, P; Argoud, M; Papon, A M; Gergaud, P; Landru, D; Kim, Y; Hartmann, J M

2018-07-06

In this paper, SiGe nano-heteroepitaxy on Si and SiGe nano-pillars was investigated in a 300 mm industrial reduced pressure-chemical vapour deposition tool. An integration scheme based on diblock copolymer patterning was used to fabricate nanometre-sized templates for the epitaxy of Si and SiGe nano-pillars. Results showed highly selective and uniform processes for the epitaxial growth of Si and SiGe nano-pillars. 200 nm thick SiGe layers were grown on Si and SiGe nano-pillars and characterised by atomic force microscopy, x-ray diffraction and transmission electron microscopy. Smooth SiGe surfaces and full strain relaxation were obtained in the 650 °C-700 °C range for 2D SiGe layers grown either on Si or SiGe nano-pillars.

In silico carbon molecular beam epitaxial growth of graphene on the h-BN substrate: carbon source effect on van der Waals epitaxy

NASA Astrophysics Data System (ADS)

Lee, Jonghoon; Varshney, Vikas; Park, Jeongho; Farmer, Barry L.; Roy, Ajit K.

2016-05-01

Against the presumption that hexagonal boron-nitride (h-BN) should provide an ideal substrate for van der Waals (vdW) epitaxy to grow high quality graphene films, carbon molecular beam epitaxy (CMBE) techniques using solid carbon sublimation have reported relatively poor quality of the graphene. In this article, the CMBE growth of graphene on the h-BN substrate is numerically studied in order to identify the effect of the carbon source on the quality of the graphene film. The carbon molecular beam generated by the sublimation of solid carbon source materials such as graphite and glassy carbon is mostly composed of atomic carbon, carbon dimers and carbon trimers. Therefore, the graphene film growth becomes a complex process involving various deposition characteristics of a multitude of carbon entities. Based on the study of surface adsorption and film growth characteristics of these three major carbon entities comprising graphite vapour, we report that carbon trimers convey strong traits of vdW epitaxy prone to high quality graphene growth, while atomic carbon deposition is a surface-reaction limited process accompanied by strong chemisorption. The vdW epitaxial behaviour of carbon trimers is found to be substantial enough to nucleate and develop into graphene like planar films within a nanosecond of high flux growth simulation, while reactive atomic carbons tend to impair the structural integrity of the crystalline h-BN substrate upon deposition to form an amorphous interface between the substrate and the growing carbon film. The content of reactive atomic carbons in the molecular beam is suspected to be the primary cause of low quality graphene reported in the literature. A possible optimization of the molecular beam composition towards the synthesis of better quality graphene films is suggested.Against the presumption that hexagonal boron-nitride (h-BN) should provide an ideal substrate for van der Waals (vdW) epitaxy to grow high quality graphene films, carbon molecular beam epitaxy (CMBE) techniques using solid carbon sublimation have reported relatively poor quality of the graphene. In this article, the CMBE growth of graphene on the h-BN substrate is numerically studied in order to identify the effect of the carbon source on the quality of the graphene film. The carbon molecular beam generated by the sublimation of solid carbon source materials such as graphite and glassy carbon is mostly composed of atomic carbon, carbon dimers and carbon trimers. Therefore, the graphene film growth becomes a complex process involving various deposition characteristics of a multitude of carbon entities. Based on the study of surface adsorption and film growth characteristics of these three major carbon entities comprising graphite vapour, we report that carbon trimers convey strong traits of vdW epitaxy prone to high quality graphene growth, while atomic carbon deposition is a surface-reaction limited process accompanied by strong chemisorption. The vdW epitaxial behaviour of carbon trimers is found to be substantial enough to nucleate and develop into graphene like planar films within a nanosecond of high flux growth simulation, while reactive atomic carbons tend to impair the structural integrity of the crystalline h-BN substrate upon deposition to form an amorphous interface between the substrate and the growing carbon film. The content of reactive atomic carbons in the molecular beam is suspected to be the primary cause of low quality graphene reported in the literature. A possible optimization of the molecular beam composition towards the synthesis of better quality graphene films is suggested. Electronic supplementary information (ESI) available: Three movie files: 3mer-physorption.mpg and 3mer-chemisorption.mpg feature examples of the adsorption state sampling of a carbon trimer on the heated h-BN substrate as mentioned in the ``Single Molecule Adsorption Study'' section. In 3mer-film-growth.mpg, an instance of honey comb formation during the initial phase of graphene growth simulation using a carbon trimer beam is captured. An initially sp hybridized carbon atom (red colored) becomes sp2 hybridized as a result of additional covalent bonding with the impinging carbon trimer. As the bond angle around the red carbon changes from 180 degree (sp) to 120 degree (sp2), nearby carbon atoms enclose to form a hexagon structure composed of 6 carbon atoms. See DOI: 10.1039/c6nr01396a

Method of depositing epitaxial layers on a substrate

DOEpatents

Goyal, Amit

2003-12-30

An epitaxial article and method for forming the same includes a substrate having a textured surface, and an electrochemically deposited substantially single orientation epitaxial layer disposed on and in contact with the textured surface. The epitaxial article can include an electromagnetically active layer and an epitaxial buffer layer. The electromagnetically active layer and epitaxial buffer layer can also be deposited electrochemically.

A Kinetic Model for GaAs Growth by Hydride Vapor Phase Epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schulte, Kevin L.; Simon, John; Jain, Nikhil

2016-11-21

Precise control of the growth of III-V materials by hydride vapor phase epitaxy (HVPE) is complicated by the fact that the growth rate depends on the concentrations of nearly all inputs to the reactor and also the reaction temperature. This behavior is in contrast to metalorganic vapor phase epitaxy (MOVPE), which in common practice operates in a mass transport limited regime where growth rate and alloy composition are controlled almost exclusively by flow of the Group III precursor. In HVPE, the growth rate and alloy compositions are very sensitive to temperature and reactant concentrations, which are strong functions of themore » reactor geometry. HVPE growth, particularly the growth of large area materials and devices, will benefit from the development of a growth model that can eventually be coupled with a computational fluid dynamics (CFD) model of a specific reactor geometry. In this work, we develop a growth rate law using a Langmuir-Hinshelwood (L-H) analysis, fitting unknown parameters to growth rate data from the literature that captures the relevant kinetic and thermodynamic phenomena of the HVPE process. We compare the L-H rate law to growth rate data from our custom HVPE reactor, and develop quantitative insight into reactor performance, demonstrating the utility of the growth model.« less

Elimination of oval defects in epilayers by using chemical beam epitaxy

NASA Astrophysics Data System (ADS)

Tsang, W. T.

1985-06-01

One ubiquitous problem that continues to haunt over molecular beam epitaxy (MBE) persistently throughout all these year and still without a good controllable solution is the presence of oval defects in gallium-containing compound semiconductor epilayers. While these defects have not presented major problems for discrete devices, they are likely to be a serious obstacle for integrated circuit applications. We showed that oval defects were present in GaAs and In0.53Ga0.47As epilayers grown by conventional MBE process using elemental Ga and In as group III sources, and either solid As4 or thermally cracked As4 from gas mixtures of trimethylarsine and hydrogen. On the other hand, the use of the chemical beam epitaxy in which the Ga and In were derived by thermal pyrolysis of their metal alkyls at the heated substrate surface resulted reproducibly in epilayers free of oval defects over the entire substrate surface of ˜8 cm diameter (limited by the substrate holder size). On the basis of the present results it is evident that the oval defects were related to the use of elemental Ga melt as the evaporant in conventional MBE.

Liquid phase epitaxy of binary III–V nanocrystals in thin Si layers triggered by ion implantation and flash lamp annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wutzler, Rene, E-mail: r.wutzler@hzdr.de; Rebohle, Lars; Prucnal, Slawomir

2015-05-07

The integration of III–V compound semiconductors in Si is a crucial step towards faster and smaller devices in future technologies. In this work, we investigate the formation process of III–V compound semiconductor nanocrystals, namely, GaAs, GaSb, and InP, by ion implantation and sub-second flash lamp annealing in a SiO{sub 2}/Si/SiO{sub 2} layer stack on Si grown by plasma-enhanced chemical vapor deposition. Raman spectroscopy, Rutherford Backscattering spectrometry, and transmission electron microscopy were performed to identify the structural and optical properties of these structures. Raman spectra of the nanocomposites show typical phonon modes of the compound semiconductors. The formation process of themore » III–V compounds is found to be based on liquid phase epitaxy, and the model is extended to the case of an amorphous matrix without an epitaxial template from a Si substrate. It is shown that the particular segregation and diffusion coefficients of the implanted group-III and group-V ions in molten Si significantly determine the final appearance of the nanostructure and thus their suitability for potential applications.« less

Engineering epitaxial γ-Al2O3 gate dielectric films on 4H-SiC

NASA Astrophysics Data System (ADS)

Tanner, Carey M.; Toney, Michael F.; Lu, Jun; Blom, Hans-Olof; Sawkar-Mathur, Monica; Tafesse, Melat A.; Chang, Jane P.

2007-11-01

The formation of epitaxial γ-Al2O3 thin films on 4H-SiC was found to be strongly dependent on the film thickness. An abrupt interface was observed in films up to 200 Å thick with an epitaxial relationship of γ-Al2O3(111)‖4H-SiC(0001) and γ-Al2O3(44¯0)‖4H-SiC(112¯0). The in-plane alignment between the film and the substrate is nearly complete for γ-Al2O3 films up to 115 Å thick, but quickly diminishes in thicker films. The films are found to be slightly strained laterally in tension; the strain increases with thickness and then decreases in films thicker than 200 Å, indicating strain relaxation which is accompanied by increased misorientation. By controlling the structure of ultrathin Al2O3 films, metal-oxide-semiconductor capacitors with Al2O3 gate dielectrics on 4H-SiC were found to have a very low leakage current density, suggesting suitability of Al2O3 for SiC device integration.

Wafer-scale epitaxial graphene on SiC for sensing applications

NASA Astrophysics Data System (ADS)

Karlsson, Mikael; Wang, Qin; Zhao, Yichen; Zhao, Wei; Toprak, Muhammet S.; Iakimov, Tihomir; Ali, Amer; Yakimova, Rositza; Syväjärvi, Mikael; Ivanov, Ivan G.

2015-12-01

The epitaxial graphene-on-silicon carbide (SiC-G) has advantages of high quality and large area coverage owing to a natural interface between graphene and SiC substrate with dimension up to 100 mm. It enables cost effective and reliable solutions for bridging the graphene-based sensors/devices from lab to industrial applications and commercialization. In this work, the structural, optical and electrical properties of wafer-scale graphene grown on 2'' 4H semi-insulating (SI) SiC utilizing sublimation process were systemically investigated with focus on evaluation of the graphene's uniformity across the wafer. As proof of concept, two types of glucose sensors based on SiC-G/Nafion/Glucose-oxidase (GOx) and SiC-G/Nafion/Chitosan/GOx were fabricated and their electrochemical properties were characterized by cyclic voltammetry (CV) measurements. In addition, a few similar glucose sensors based on graphene by chemical synthesis using modified Hummer's method were also fabricated for comparison.

Strain-induced oxygen vacancies in ultrathin epitaxial CaMnO3 films

NASA Astrophysics Data System (ADS)

Chandrasena, Ravini; Yang, Weibing; Lei, Qingyu; Delgado-Jaime, Mario; de Groot, Frank; Arenholz, Elke; Kobayashi, Keisuke; Aschauer, Ulrich; Spaldin, Nicola; Xi, Xiaoxing; Gray, Alexander

Dynamic control of strain-induced ionic defects in transition-metal oxides is considered to be an exciting new avenue towards creating materials with novel electronic, magnetic and structural properties. Here we use atomic layer-by-layer laser molecular beam epitaxy to synthesize high-quality ultrathin single-crystalline CaMnO3 films with systematically varying coherent tensile strain. We then utilize a combination of high-resolution soft x-ray absorption spectroscopy and bulk-sensitive hard x-ray photoemission spectroscopy in conjunction with first-principles theory and core-hole multiplet calculations to establish a direct link between the coherent in-plane strain and the oxygen-vacancy content. We show that the oxygen vacancies are highly mobile, which necessitates an in-situ-grown capping layer in order to preserve the original strain-induced oxygen-vacancy content. Our findings open the door for designing and controlling new ionically active properties in strongly-correlated transition-metal oxides.

Exploration and engineering of physical properties in high-quality Sr2CrReO6 epitaxial films

NASA Astrophysics Data System (ADS)

Lucy, Jeremy Matthew

Double perovskites have proven to be highly interesting materials, particularly in the past two decades, with many materials in this family exhibiting strong correlations. These materials are some of many novel complex oxides with potential spintronics application. Sr2CrReO6, in particular, is a double perovskite with one of the highest Curie temperatures of its class (> 620 K in bulk and ~510-600 K in thin films), as well as high spin polarization, ferrimagnetic behavior, and semiconducting properties. This dissertation covers recent work in exploring and tuning physical properties in epitaxial films of Sr2CrReO6. It starts by providing a background for the field of spintronics and double perovskites, bulk and thin film synthesis of Sr2CrReO6, and standard and specialized characterization techniques utilized in both university and national laboratories, and then provides reports of work on Sr2CrReO6 epitaxial films. Examples of exploration and engineering of properties of Sr2CrReO 6 include: (1) tuning of electrical resistivity, such as at T= 7 K by a factor of 18,000%, via control of oxygen partial pressure during film growth; (2) enhancement of interfacial double perovskite ordering, demonstrated with high-angle annular dark-field scanning transmission electron microscopy, via the use of double perovskite buffer layer substrates; (3) measurement of magnetization suppression near film/substrate interfaces via polarized neutron reflectometry, which reveals a reduction of thickness (from 5.6 nm to 3.6 nm) of the magnetically suppressed interface region due to buffer layer enhancement; (4) strain tunability of atomic spin and orbital moments of Cr, Re, and O atoms probed with x-ray magnetic circular dichroism, which demonstrates ferrimagnetic behavior and reveals important magnetic contributions of the oxygen sites (~0.02 muB/site); (5) strain tunability of large magnetocrystalline anisotropy via applied epitaxial strain, revealing anisotropy fields of up to 10s of tesla; and (6) depth-resolved synchrotron x-ray studies of correlated magnetic and structural relaxation in a thick relaxing film. The utilized techniques and demonstrated results for Sr2CrReO6 will hopefully benefit researchers of complex oxide materials and perhaps stimulate further work on this and other related materials.

Surface segregation effects of erbium in GaAs growth and their implications for optical devices containing ErAs nanostructures

NASA Astrophysics Data System (ADS)

Crook, Adam M.; Nair, Hari P.; Bank, Seth R.

2011-03-01

We report on the integration of semimetallic ErAs nanoparticles with high optical quality GaAs-based semiconductors, grown by molecular beam epitaxy. Secondary ion mass spectrometry and photoluminescence measurements provide evidence of surface segregation and incorporation of erbium into layers grown with the erbium cell hot, despite the closed erbium source shutter. We establish the existence of a critical areal density of the surface erbium layer, below which the formation of ErAs precipitates is suppressed. Based upon these findings, we demonstrate a method for overgrowing ErAs nanoparticles with III-V layers of high optical quality, using subsurface ErAs nanoparticles as a sink to deplete the surface erbium concentration. This approach provides a path toward realizing optical devices based on plasmonic effects in an epitaxially-compatible semimetal/semiconductor system.

Epitaxial Growth of Hetero-Ln-MOF Hierarchical Single Crystals for Domain- and Orientation-Controlled Multicolor Luminescence 3D Coding Capability.

PubMed

Pan, Mei; Zhu, Yi-Xuan; Wu, Kai; Chen, Ling; Hou, Ya-Jun; Yin, Shao-Yun; Wang, Hai-Ping; Fan, Ya-Nan; Su, Cheng-Yong

2017-11-13

Core-shell or striped heteroatomic lanthanide metal-organic framework hierarchical single crystals were obtained by liquid-phase anisotropic epitaxial growth, maintaining identical periodic organization while simultaneously exhibiting spatially segregated structure. Different types of domain and orientation-controlled multicolor photophysical models are presented, which show either visually distinguishable or visible/near infrared (NIR) emissive colors. This provides a new bottom-up strategy toward the design of hierarchical molecular systems, offering high-throughput and multiplexed luminescence color tunability and readability. The unique capability of combining spectroscopic coding with 3D (three-dimensional) microscale spatial coding is established, providing potential applications in anti-counterfeiting, color barcoding, and other types of integrated and miniaturized optoelectronic materials and devices. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

High performance waveguide-coupled Ge-on-Si linear mode avalanche photodiodes

DOE PAGES

Martinez, Nicholas J. D.; Derose, Christopher T.; Brock, Reinhard W.; ...

2016-08-09

Here, we present experimental results for a selective epitaxially grown Ge-on-Si separate absorption and charge multiplication (SACM) integrated waveguide coupled avalanche photodiode (APD) compatible with our silicon photonics platform. Epitaxially grown Ge-on-Si waveguide-coupled linear mode avalanche photodiodes with varying lateral multiplication regions and different charge implant dimensions are fabricated and their illuminated device characteristics and high-speed performance is measured. We report a record gain-bandwidth product of 432 GHz for our highest performing waveguide-coupled avalanche photodiode operating at 1510nm. Bit error rate measurements show operation with BER< 10 –12, in the range from –18.3 dBm to –12 dBm received optical powermore » into a 50 Ω load and open eye diagrams with 13 Gbps pseudo-random data at 1550 nm.« less

Strain analysis of SiGe microbridges

NASA Astrophysics Data System (ADS)

Anthony, Ross; Gilbank, Ashley; Crowe, Iain; Knights, Andrew

2018-02-01

We present the analysis of UV (325 nm) Raman scattering spectra from silicon-germanium (SiGe) microbridges where the SiGe has been formed using the so-called "condensation technique". As opposed to the conventional condensation technique in which SiGe is grown epitaxially, we use high-dose ion implantation of Ge ions into SOI as a means to introduce the initial Ge profile. The subsequent oxidation both repairs implantation induced damage, and forms epitaxial Ge. Using Si-Si and Si-Ge optical phonon modes, as well as the ratio of integrated intensities for Ge-Ge and Si-Si, we can determine both the composition and strain of the material. We show that although the material is compressively strained following condensation, by fabricating microbridge structures we can create strain relaxed or tensile strained structures, with subsequent interest for photonic applications.

III-nitride nanowire LEDs and diode lasers: monolithic light sources on (001) Si emitting in the 600-1300nm range

NASA Astrophysics Data System (ADS)

Bhattacharya, P.; Hazari, A.; Jahangir, S.

2018-02-01

GaN-based nanowire heterostructure arrays epitaxially grown on (001)Si substrates have unique properties and present the potential to realize useful devices. The active light-emitting region in the nanowire heterostructures are usually InGaN disks, whose composition can be varied to tune the emission wavelength. We have demonstrated light emitting diodes and edgeemitting diode lasers with power outputs 10mW with emission in the 600-1300nm wavelength range. These light sources are therefore useful for a variety of applications, including silicon photonics. Molecular beam epitaxial growth of the nanowire heterostructure arrays on (001)Si substrates and the characteristics of 1.3μm nanowire array edge emitting lasers, guided wave photodiodes and a monolithic photonic integrated circuit designed for 1.3μm operation are described.

Silicon-on-insulator with hybrid orientations for heterogeneous integration of GaN on Si (100) substrate

NASA Astrophysics Data System (ADS)

Zhang, Runchun; Zhao, Beiji; Huang, Kai; You, Tiangui; Jia, Qi; Lin, Jiajie; Zhang, Shibin; Yan, Youquan; Yi, Ailun; Zhou, Min; Ou, Xin

2018-05-01

Heterogeneous integration of materials pave a new way for the development of the microsystem with miniaturization and complex functionalities. Two types of hybrid silicon on insulator (SOI) structures, i.e., Si (100)-on-Si (111) and Si (111)-on-Si (100), were prepared by the smart-cut technique, which is consist of ion-slicing and wafer bonding. The precise calculation of the lattice strain of the transferred films without the epitaxial matching relationship to the substrate was demonstrated based on X-ray diffraction (XRD) measurements. The XRD and Raman measurement results suggest that the transferred films possess single crystalline quality. With a chemical mechanical polishing (CMP) process, the surface roughness of the transferred thin films can be reduced from 5.57 nm to 0.30 nm. The 4-inch GaN thin film epitaxially grown on the as-prepared hybrid SOI of Si (111)-on-Si (100) by metalorganic chemical vapor deposition (MOCVD) is of improved quality with a full width at half maximum (FWHM) of 672.54 arcsec extracted from the XRD rocking curve and small surface roughness of 0.40 nm. The wafer-scale GaN on Si (111)-on-Si (100) can serve as a potential platform for the one chip integration of GaN-based high electron mobility transistors (HEMT) or photonics with the Si (100)-based complementary metal oxide semiconductor (CMOS).

Schottky barrier detection devices having a 4H-SiC n-type epitaxial layer

DOEpatents

Mandal, Krishna C.; Terry, J. Russell

2016-12-06

A detection device, along with methods of its manufacture and use, is provided. The detection device can include: a SiC substrate defining a substrate surface cut from planar to about 12.degree.; a buffer epitaxial layer on the substrate surface; a n-type epitaxial layer on the buffer epitaxial layer; and a top contact on the n-type epitaxial layer. The buffer epitaxial layer can include a n-type 4H--SiC epitaxial layer doped at a concentration of about 1.times.10.sup.15 cm.sup.-3 to about 5.times.10.sup.18 cm.sup.-3 with nitrogen, boron, aluminum, or a mixture thereof. The n-type epitaxial layer can include a n-type 4H--SiC epitaxial layer doped at a concentration of about 1.times.10.sup.13 cm.sup.-3 to about 5.times.10.sup.15 cm.sup.-3 with nitrogen. The top contact can have a thickness of about 8 nm to about 15 nm.

High speed analog-to-digital conversion with silicon photonics

NASA Astrophysics Data System (ADS)

Holzwarth, C. W.; Amatya, R.; Araghchini, M.; Birge, J.; Byun, H.; Chen, J.; Dahlem, M.; DiLello, N. A.; Gan, F.; Hoyt, J. L.; Ippen, E. P.; Kärtner, F. X.; Khilo, A.; Kim, J.; Kim, M.; Motamedi, A.; Orcutt, J. S.; Park, M.; Perrott, M.; Popovic, M. A.; Ram, R. J.; Smith, H. I.; Zhou, G. R.; Spector, S. J.; Lyszczarz, T. M.; Geis, M. W.; Lennon, D. M.; Yoon, J. U.; Grein, M. E.; Schulein, R. T.; Frolov, S.; Hanjani, A.; Shmulovich, J.

2009-02-01

Sampling rates of high-performance electronic analog-to-digital converters (ADC) are fundamentally limited by the timing jitter of the electronic clock. This limit is overcome in photonic ADC's by taking advantage of the ultra-low timing jitter of femtosecond lasers. We have developed designs and strategies for a photonic ADC that is capable of 40 GSa/s at a resolution of 8 bits. This system requires a femtosecond laser with a repetition rate of 2 GHz and timing jitter less than 20 fs. In addition to a femtosecond laser this system calls for the integration of a number of photonic components including: a broadband modulator, optical filter banks, and photodetectors. Using silicon-on-insulator (SOI) as the platform we have fabricated these individual components. The silicon optical modulator is based on a Mach-Zehnder interferometer architecture and achieves a VπL of 2 Vcm. The filter banks comprise 40 second-order microring-resonator filters with a channel spacing of 80 GHz. For the photodetectors we are exploring ion-bombarded silicon waveguide detectors and germanium films epitaxially grown on silicon utilizing a process that minimizes the defect density.

Integrated Multiscale Modeling of Molecular Computing Devices. Final Report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tim Schulze

2012-11-01

The general theme of this research has been to expand the capabilities of a simulation technique, Kinetic Monte Carlo (KMC) and apply it to study self-assembled nano-structures on epitaxial thin films. KMC simulates thin film growth and evolution by replacing the detailed dynamics of the system's evolution, which might otherwise be studied using molecular dynamics, with an appropriate stochastic process.

Two color high operating temperature HgCdTe photodetectors grown by molecular beam epitaxy on silicon substrates

NASA Astrophysics Data System (ADS)

Velicu, S.; Bommena, R.; Morley, M.; Zhao, J.; Fahey, S.; Cowan, V.; Morath, C.

2013-09-01

The development of a broadband IR focal plane array poses several challenges in the area of detector design, material, device physics, fabrication process, hybridization, integration and testing. The purpose of our research is to address these challenges and demonstrate a high-performance IR system that incorporates a HgCdTe-based detector array with high uniformity and operability. Our detector architecture, grown using molecular beam epitaxy (MBE), is vertically integrated, leading to a stacked detector structure with the capability to simultaneously detect in two spectral bands. MBE is the method of choice for multiplelayer HgCdTe growth because it produces material of excellent quality and allows composition and doping control at the atomic level. Such quality and control is necessary for the fabrication of multicolor detectors since they require advanced bandgap engineering techniques. The proposed technology, based on the bandgap-tunable HgCdTe alloy, has the potential to extend the broadband detector operation towards room temperature. We present here our modeling, MBE growth and device characterization results, demonstrating Auger suppression in the LWIR band and diffusion limited behavior in the MWIR band.

Low-Temperature Surface Preparation and Epitaxial Growth of ZnS and Cu 2ZnSnS 4 on ZnS(110) and GaP(100)

DOE PAGES

Harvey, Steven P; Wilson, Samual; Moutinho, Helio R; ...

2017-08-12

Here we give a summary of the low-temperature preparation methods of ZnS(110) and GaP(100) crystals for epitaxial growth of ZnS and Cu 2ZnSnS 4 (CZTS) via molecular beam epitaxy. Substrates were prepared for epitaxial growth by means of room-temperature aqueous surface treatments and subsequent ultra-high vacuum transfer to the deposition system. Epitaxial growth of ZnS was successful at 500 K on both ZnS(110) and GaP(100) as only single domains were observed with electron backscatter diffraction; furthermore, transmission electron microscopy measurements confirmed an epitaxial interface. Epitaxial growth of CZTS was successful on ZnS at 700 K. However, epitaxial growth was notmore » possible on GaP at 700 K due to Ga xS y formation, which significantly degraded the quality of the GaP crystal surface. Although CZTS was grown epitaxially on ZnS, growth of multiple crystallographic domains remains a problem that could inherently limit the viability of epitaxial CZTS for model system studies.« less

Low-Temperature Surface Preparation and Epitaxial Growth of ZnS and Cu 2ZnSnS 4 on ZnS(110) and GaP(100)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Harvey, Steven P; Wilson, Samual; Moutinho, Helio R

Here we give a summary of the low-temperature preparation methods of ZnS(110) and GaP(100) crystals for epitaxial growth of ZnS and Cu 2ZnSnS 4 (CZTS) via molecular beam epitaxy. Substrates were prepared for epitaxial growth by means of room-temperature aqueous surface treatments and subsequent ultra-high vacuum transfer to the deposition system. Epitaxial growth of ZnS was successful at 500 K on both ZnS(110) and GaP(100) as only single domains were observed with electron backscatter diffraction; furthermore, transmission electron microscopy measurements confirmed an epitaxial interface. Epitaxial growth of CZTS was successful on ZnS at 700 K. However, epitaxial growth was notmore » possible on GaP at 700 K due to Ga xS y formation, which significantly degraded the quality of the GaP crystal surface. Although CZTS was grown epitaxially on ZnS, growth of multiple crystallographic domains remains a problem that could inherently limit the viability of epitaxial CZTS for model system studies.« less

Thermal transport across metal silicide-silicon interfaces: An experimental comparison between epitaxial and nonepitaxial interfaces

NASA Astrophysics Data System (ADS)

Ye, Ning; Feser, Joseph P.; Sadasivam, Sridhar; Fisher, Timothy S.; Wang, Tianshi; Ni, Chaoying; Janotti, Anderson

2017-02-01

Silicides are used extensively in nano- and microdevices due to their low electrical resistivity, low contact resistance to silicon, and their process compatibility. In this work, the thermal interface conductance of TiSi2, CoSi2, NiSi, and PtSi are studied using time-domain thermoreflectance. Exploiting the fact that most silicides formed on Si(111) substrates grow epitaxially, while most silicides on Si(100) do not, we study the effect of epitaxy, and show that for a wide variety of interfaces there is no dependence of interface conductance on the detailed structure of the interface. In particular, there is no difference in the thermal interface conductance between epitaxial and nonepitaxial silicide/silicon interfaces, nor between epitaxial interfaces with different interface orientations. While these silicide-based interfaces yield the highest reported interface conductances of any known interface with silicon, none of the interfaces studied are found to operate close to the phonon radiation limit, indicating that phonon transmission coefficients are nonunity in all cases and yet remain insensitive to interfacial structure. In the case of CoSi2, a comparison is made with detailed computational models using (1) full-dispersion diffuse mismatch modeling (DMM) including the effect of near-interfacial strain, and (2) an atomistic Green' function (AGF) approach that integrates near-interface changes in the interatomic force constants obtained through density functional perturbation theory. Above 100 K, the AGF approach significantly underpredicts interface conductance suggesting that energy transport does not occur purely by coherent transmission of phonons, even for epitaxial interfaces. The full-dispersion DMM closely predicts the experimentally observed interface conductances for CoSi2, NiSi, and TiSi2 interfaces, while it remains an open question whether inelastic scattering, cross-interfacial electron-phonon coupling, or other mechanisms could also account for the high-temperature behavior. The effect of degenerate semiconductor dopant concentration on metal-semiconductor thermal interface conductance was also investigated with the result that we have found no dependencies of the thermal interface conductances up to (n or p type) ≈1 ×1019 cm-3, indicating that there is no significant direct electronic transport and no transport effects that depend on long-range metal-semiconductor band alignment.

Buffer architecture for biaxially textured structures and method of fabricating same

DOEpatents

Norton, David P.; Park, Chan; Goyal, Amit

2004-04-06

The invention relates to an article with an improved buffer layer architecture comprising a substrate having a metal surface, and an epitaxial buffer layer on the surface of the substrate. The epitaxial buffer layer comprises at least one of the group consisting of ZrO.sub.2, HfO.sub.2, and compounds having at least one of Ca and a rare earth element stabilizing cubic phases of ZrO.sub.2 and/or HfO.sub.2. The article can also include a superconducting layer deposited on the epitaxial buffer layer. The article can also include an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article comprises providing a substrate with a metal surface, depositing on the metal surface an epitaxial buffer layer comprising at least one material selected from the group consisting of ZrO.sub.2, HfO.sub.2, and compounds having at least one of Ca and a rare earth element stabilizing cubic phases of at least one of ZrO.sub.2 and HfO.sub.2. The epitaxial layer depositing step occurs in a vacuum with a background pressure of no more than 1.times.10.sup.-5 Torr. The method can further comprise depositing a superconducting layer on the epitaxial layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.

A reliable method to grow vertically-aligned silicon nanowires by a novel ramp-cooling process

NASA Astrophysics Data System (ADS)

Ho, Tzuen-Wei; Hong, Franklin Chau-Nan

2012-08-01

We have grown silicon nanowires (SiNWs) on Si (1 1 1) substrates by gold-catalyzed vapor-liquid-solid (VLS) process using tetrachlorosilane (SiCl4) in a hot-wall chemical vapor deposition reactor. Even under the optimized conditions including H2 annealing to reduce the surface native oxide, epitaxial SiNWs of 150-200 nm in diameter often grew along all four <1 1 1> family directions with one direction vertical and three others inclined to the surface. Therefore, the growth of high degree ordered SiNW arrays along [1 1 1] only was attempted on Au-coated Si (1 1 1) by a ramp-cooling process utilizing the liquid phase epitaxy (LPE) mechanism. The Au-coated Si substrate was first annealed in H2 at 650 °C to form Au-Si alloy nanoparticles, and then ramp-cooled at a controlled rate to precipitate epitaxial Si seeds on the substrate based on LPE mechanism. The substrate was further heated in SiCl4/H2 to 850 °C for the VLS growths of SiNWs on the Si seeds. Thus, almost 100% vertically-aligned SiNWs along [1 1 1] only could be reproducibly grown on Si (1 1 1), without using a template or patterning the metal catalyst. The high-density vertically-aligned SiNWs have good potentials for solar cells and nano-devices.

Design and development of wafer-level near-infrared micro-camera

NASA Astrophysics Data System (ADS)

Zeller, John W.; Rouse, Caitlin; Efstathiadis, Harry; Haldar, Pradeep; Dhar, Nibir K.; Lewis, Jay S.; Wijewarnasuriya, Priyalal; Puri, Yash R.; Sood, Ashok K.

2015-08-01

SiGe offers a low-cost alternative to conventional infrared sensor material systems such as InGaAs, InSb, and HgCdTe for developing near-infrared (NIR) photodetector devices that do not require cooling and can offer high bandwidths and responsivities. As a result of the significant difference in thermal expansion coefficients between germanium and silicon, tensile strain incorporated into Ge epitaxial layers deposited on Si utilizing specialized growth processes can extend the operational range of detection to 1600 nm and longer wavelengths. We have fabricated SiGe based PIN detector devices on 300 mm diameter Si wafers in order to take advantage of high throughput, large-area complementary metal-oxide semiconductor (CMOS) technology. This device fabrication process involves low temperature epitaxial deposition of Ge to form a thin p+ seed/buffer layer, followed by higher temperature deposition of a thicker Ge intrinsic layer. An n+-Ge layer formed by ion implantation of phosphorus, passivating oxide cap, and then top copper contacts complete the PIN photodetector design. Various techniques including transmission electron microscopy (TEM) and secondary ion mass spectrometry (SIMS) have been employed to characterize the material and structural properties of the epitaxial growth and fabricated detector devices. In addition, electrical characterization was performed to compare the I-V dark current vs. photocurrent response as well as the time and wavelength varying photoresponse properties of the fabricated devices, results of which are likewise presented.

Development and Industrialization of InGaN/GaN LEDs on Patterned Sapphire Substrates for Low Cost Emitter Architecture

DOE Office of Scientific and Technical Information (OSTI.GOV)

Flemish, Joseph; Soer, Wouter

2015-11-30

Patterned sapphire substrate (PSS) technology has proven to be an effective approach to improve efficacy and reduce cost of light-emitting diodes (LEDs). The volume emission from the transparent substrate leads to high package efficiency, while the simple and robust architecture of PSS-based LEDs enables low cost. PSS substrates have gained wide use in mid-power LEDs over the past years. In this project, Lumileds has developed and industrialized PSS and epitaxy technology for high- power flip-chip LEDs to bring these benefits to a broader range of applications and accelerate the adoption of energy-efficient solid-state lighting (SSL). PSS geometries were designed formore » highly efficient light extraction in a flip-chip architecture and high-volume manufacturability, and corresponding sapphire patterning and epitaxy manufacturing processes were integrally developed. Concurrently, device and package architectures were developed to take advantage of the PSS flip-chip die in different types of products that meet application needs. The developed PSS and epitaxy technology has been fully implemented in manufacturing at Lumileds’ San Jose, CA location, and incorporated in illumination-grade LED products that have been successfully introduced to the market, including LUXEON Q and LUXEON FlipChip White.« less

Materials, structures, and devices for high-speed electronics

NASA Technical Reports Server (NTRS)

Woollam, John A.; Snyder, Paul G.

1992-01-01

Advances in materials, devices, and instrumentation made under this grant began with ex-situ null ellipsometric measurements of simple dielectric films on bulk substrates. Today highly automated and rapid spectroscopic ellipsometers are used for ex-situ characterization of very complex multilayer epitaxial structures. Even more impressive is the in-situ capability, not only for characterization but also for the actual control of the growth and etching of epitaxial layers. Spectroscopic ellipsometry has expanded from the research lab to become an integral part of the production of materials and structures for state of the art high speed devices. Along the way, it has contributed much to our understanding of the growth characteristics and material properties. The following areas of research are summarized: Si3N4 on GaAs, null ellipsometry; diamondlike carbon films; variable angle spectroscopic ellipsometry (VASE) development; GaAs-AlGaAs heterostructures; Ta-Cu diffusion barrier films on GaAs; GaAs-AlGaAs superlattices and multiple quantum wells; superconductivity; in situ elevated temperature measurements of III-V's; optical constants of thermodynamically stable InGaAs; doping dependence of optical constants of GaAs; in situ ellipsometric studies of III-V epitaxial growth; photothermal spectroscopy; microellipsometry; and Si passivation and Si/SiGe strained-layer superlattices.

Epitaxial Growth of Aligned and Continuous Carbon Nanofibers from Carbon Nanotubes.

PubMed

Lin, Xiaoyang; Zhao, Wei; Zhou, Wenbin; Liu, Peng; Luo, Shu; Wei, Haoming; Yang, Guangzhi; Yang, Junhe; Cui, Jie; Yu, Richeng; Zhang, Lina; Wang, Jiaping; Li, Qunqing; Zhou, Weiya; Zhao, Weisheng; Fan, Shoushan; Jiang, Kaili

2017-02-28

Exploiting the superior properties of nanomaterials at macroscopic scale is a key issue of nanoscience. Different from the integration strategy, "additive synthesis" of macroscopic structures from nanomaterial templates may be a promising choice. In this paper, we report the epitaxial growth of aligned, continuous, and catalyst-free carbon nanofiber thin films from carbon nanotube films. The fabrication process includes thickening of continuous carbon nanotube films by gas-phase pyrolytic carbon deposition and further graphitization of the carbon layer by high-temperature treatment. As-fabricated nanofibers in the film have an "annual ring" cross-section, with a carbon nanotube core and a graphitic periphery, indicating the templated growth mechanism. The absence of a distinct interface between the carbon nanotube template and the graphitic periphery further implies the epitaxial growth mechanism of the fiber. The mechanically robust thin film with tunable fiber diameters from tens of nanometers to several micrometers possesses low density, high electrical conductivity, and high thermal conductivity. Further extension of this fabrication method to enhance carbon nanotube yarns is also demonstrated, resulting in yarns with ∼4-fold increased tensile strength and ∼10-fold increased Young's modulus. The aligned and continuous features of the films together with their outstanding physical and chemical properties would certainly promote the large-scale applications of carbon nanofibers.

Integrating Epitaxial-Like Pb(Zr,Ti)O3 Thin-Film into Silicon for Next-Generation Ferroelectric Field-Effect Transistor

PubMed Central

Park, Jae Hyo; Kim, Hyung Yoon; Jang, Gil Su; Seok, Ki Hwan; Chae, Hee Jae; Lee, Sol Kyu; Kiaee, Zohreh; Joo, Seung Ki

2016-01-01

The development of ferroelectric random-access memory (FeRAM) technology with control of grain boundaries would result in a breakthrough for new nonvolatile memory devices. The excellent piezoelectric and electrical properties of bulk ferroelectrics are degraded when the ferroelectric is processed into thin films because the grain boundaries then form randomly. Controlling the nature of nucleation and growth are the keys to achieving a good crystalline thin-film. However, the sought after high-quality ferroelectric thin-film has so far been thought to be impossible to make, and research has been restricted to atomic-layer deposition which is extremely expensive and has poor reproducibility. Here we demonstrate a novel epitaxial-like growth technique to achieve extremely uniform and large rectangular-shaped grains in thin-film ferroelectrics by dividing the nucleation and growth phases. With this technique, it is possible to achieve 100-μm large uniform grains, even made available on Si, which is large enough to fabricate a field-effect transistor in each grain. The electrical and reliability test results, including endurance and retention test results, were superior to other FeRAMs reported so far and thus the results presented here constitute the first step toward the development of FeRAM using epitaxial-like ferroelectric thin-films. PMID:27005886

Changes in the Mg profile and in dislocations induced by high temperature annealing of blue LEDs

NASA Astrophysics Data System (ADS)

Meneghini, M.; Trivellin, N.; Berti, M.; Cesca, T.; Gasparotto, A.; Vinattieri, A.; Bogani, F.; Zhu, D.; Humphreys, C. J.; Meneghesso, G.; Zanoni, E.

2013-03-01

The efficiency of the injection and recombination processes in InGaN/GaN LEDs is governed by the properties of the active region of the devices, which strongly depend on the conditions used for the growth of the epitaxial material. To improve device quality, it is very important to understand how the high temperatures used during the growth process can modify the quality of the epitaxial material. With this paper we present a study of the modifications in the properties of InGaN/GaN LED structures induced by high temperature annealing: thermal stress tests were carried out at 900 °C, in nitrogen atmosphere, on selected samples. The efficiency and the recombination dynamics were evaluated by photoluminescence measurements (both integrated and time-resolved), while the properties of the epitaxial material were studied by Secondary Ion Mass Spectroscopy (SIMS) and Rutherford Backscattering (RBS) channeling measurements. Results indicate that exposure to high temperatures may lead to: (i) a significant increase in the photoluminescence efficiency of the devices; (ii) a decrease in the parasitic emission bands located between 380 nm and 400 nm; (iii) an increase in carrier lifetime, as detected by time-resolved photoluminescence measurements. The increase in device efficiency is tentatively ascribed to an improvement in the crystallographic quality of the samples.

Band-Gap Engineering at a Semiconductor-Crystalline Oxide Interface

DOE PAGES

Jahangir-Moghadam, Mohammadreza; Ahmadi-Majlan, Kamyar; Shen, Xuan; ...

2015-02-09

The epitaxial growth of crystalline oxides on semiconductors provides a pathway to introduce new functionalities to semiconductor devices. Key to integrating the functionalities of oxides onto semiconductors is controlling the band alignment at interfaces between the two materials. Here we apply principles of band gap engineering traditionally used at heterojunctions between conventional semiconductors to control the band offset between a single crystalline oxide and a semiconductor. Reactive molecular beam epitaxy is used to realize atomically abrupt and structurally coherent interfaces between SrZr xTi 1-xO₃ and Ge, in which the band gap of the former is enhanced with Zr content x.more » We present structural and electrical characterization of SrZr xTi 1-xO₃-Ge heterojunctions and demonstrate a type-I band offset can be achieved. These results demonstrate that band gap engineering can be exploited to realize functional semiconductor crystalline oxide heterojunctions.« less

Intercalated europium metal in epitaxial graphene on SiC

DOE PAGES

Anderson, Nathaniel; Hupalo, Myron; Keavney, David; ...

2017-10-25

X-ray magnetic circular dichroism (XMCD) reveals the magnetic properties of intercalated europium metal under graphene on SiC(0001). Intercalation of Eu nanoclusters (average size 2.5 nm) between graphene and SiC substate are formed by deposition of Eu on epitaxially grown graphene that is subsequently annealed at various temperatures while keeping the integrity of the graphene layer. Using sum-rules analysis of the XMCD of Eu M 4,5 edges at T = 15 K, our samples show paramagnetic-like behavior with distinct anomaly at T ≈ 90 K, which may be related to the Nèel transition, T N = 91 K, of bulk metalmore » Eu. Here, we find no evidence of ferromagnetism due to EuO or antiferromagnetism due to Eu 2 O 3, indicating that the graphene layer protects the intercalated metallic Eu against oxidation over months of exposure to atmospheric environment.« less

Concentration transient analysis of antimony surface segregation during Si(100) molecular beam epitaxy

NASA Technical Reports Server (NTRS)

Markert, L. C.; Greene, J. E.; Ni, W.-X.; Hansson, G. V.; Sundgren, J.-E.

1991-01-01

Antimony surface segregation during Si(100) molecular beam epitaxy (MBE) was investigated at temperatures T(sub s) = 515 - 800 C using concentration transient analysis (CTA). The dopant surface coverage Theta, bulk fraction gamma, and incorporation probability sigma during MBE were determined from secondary-ion mass spectrometry depth profiles of modulation-doped films. Programmed T(sub s) changes during growth were used to trap the surface-segregated dopant overlayer, producing concentration spikes whose integrated area corresponds to Theta. Thermal antimony doping by coevaporation was found to result in segregation strongly dependent on T(sub s) with Theta(sub Sb) values up to 0.9 monolayers (ML): in films doped with Sb(+) ions accelerated by 100 V, Theta(sub Sb) was less than or equal to 4 x 10(exp -3) ML. Surface segregation of coevaporated antimony was kinematically limited for the film growth conditions in these experiments.

Tailoring Heterovalent Interface Formation with Light

DOE PAGES

Park, Kwangwook; Alberi, Kirstin

2017-08-17

Integrating different semiconductor materials into an epitaxial device structure offers additional degrees of freedom to select for optimal material properties in each layer. However, interface between materials with different valences (i.e. III-V, II-VI and IV semiconductors) can be difficult to form with high quality. Using ZnSe/GaAs as a model system, we explore the use of UV illumination during heterovalent interface growth by molecular beam epitaxy as a way to modify the interface properties. We find that UV illumination alters the mixture of chemical bonds at the interface, permitting the formation of Ga-Se bonds that help to passivate the underlying GaAsmore » layer. Illumination also helps to reduce defects in the ZnSe epilayer. Furthermore, these results suggest that moderate UV illumination during growth may be used as a way to improve the optical properties of both the GaAs and ZnSe layers on either side of the interface.« less

Nonvolatile MoS2 field effect transistors directly gated by single crystalline epitaxial ferroelectric

NASA Astrophysics Data System (ADS)

Lu, Zhongyuan; Serrao, Claudy; Khan, Asif Islam; You, Long; Wong, Justin C.; Ye, Yu; Zhu, Hanyu; Zhang, Xiang; Salahuddin, Sayeef

2017-07-01

We demonstrate non-volatile, n-type, back-gated, MoS2 transistors, placed directly on an epitaxial grown, single crystalline, PbZr0.2Ti0.8O3 (PZT) ferroelectric. The transistors show decent ON current (19 μA/μm), high on-off ratio (107), and a subthreshold swing of (SS ˜ 92 mV/dec) with a 100 nm thick PZT layer as the back gate oxide. Importantly, the ferroelectric polarization can directly control the channel charge, showing a clear anti-clockwise hysteresis. We have self-consistently confirmed the switching of the ferroelectric and corresponding change in channel current from a direct time-dependent measurement. Our results demonstrate that it is possible to obtain transistor operation directly on polar surfaces, and therefore, it should be possible to integrate 2D electronics with single crystalline functional oxides.

Intercalated europium metal in epitaxial graphene on SiC

DOE Office of Scientific and Technical Information (OSTI.GOV)

Anderson, Nathaniel; Hupalo, Myron; Keavney, David

X-ray magnetic circular dichroism (XMCD) reveals the magnetic properties of intercalated europium metal under graphene on SiC(0001). Intercalation of Eu nanoclusters (average size 2.5 nm) between graphene and SiC substate are formed by deposition of Eu on epitaxially grown graphene that is subsequently annealed at various temperatures while keeping the integrity of the graphene layer. Using sum-rules analysis of the XMCD of Eu M 4,5 edges at T = 15 K, our samples show paramagnetic-like behavior with distinct anomaly at T ≈ 90 K, which may be related to the Nèel transition, T N = 91 K, of bulk metalmore » Eu. Here, we find no evidence of ferromagnetism due to EuO or antiferromagnetism due to Eu 2 O 3, indicating that the graphene layer protects the intercalated metallic Eu against oxidation over months of exposure to atmospheric environment.« less

High quality thin films of thermoelectric misfit cobalt oxides prepared by a chemical solution method

PubMed Central

Rivas-Murias, Beatriz; Manuel Vila-Fungueiriño, José; Rivadulla, Francisco

2015-01-01

Misfit cobaltates ([Bi/Ba/Sr/Ca/CoO]nRS[CoO2]q) constitute the most promising family of thermoelectric oxides for high temperature energy harvesting. However, their complex structure and chemical composition makes extremely challenging their deposition by high-vacuum physical techniques. Therefore, many of them have not been prepared as thin films until now. Here we report the synthesis of high-quality epitaxial thin films of the most representative members of this family of compounds by a water-based chemical solution deposition method. The films show an exceptional crystalline quality, with an electrical conductivity and thermopower comparable to single crystals. These properties are linked to the epitaxial matching of the rock-salt layers of the structure to the substrate, producing clean interfaces free of amorphous phases. This is an important step forward for the integration of these materials with complementary n-type thermoelectric oxides in multilayer nanostructures. PMID:26153533

Monolithic in-based III-V compound semiconductor focal plane array cell with single stage CCD output

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Cunningham, Thomas J. (Inventor); Krabach, Timothy N. (Inventor); Staller, Craig O. (Inventor)

1994-01-01

A monolithic semiconductor imager includes an indium-based III-V compound semiconductor monolithic active layer of a first conductivity type, an array of plural focal plane cells on the active layer, each of the focal plane cells including a photogate over a top surface of the active layer, a readout circuit dedicated to the focal plane cell including plural transistors formed monolithically with the monolithic active layer and a single-stage charge coupled device formed monolithically with the active layer between the photogate and the readout circuit for transferring photo-generated charge accumulated beneath the photogate during an integration period to the readout circuit. The photogate includes thin epitaxial semiconductor layer of a second conductivity type overlying the active layer and an aperture electrode overlying a peripheral portion of the thin epitaxial semiconductor layer, the aperture electrode being connectable to a photogate bias voltage.

Tunneling Spectroscopy Studies of Epitaxial Graphene on Silicon Carbide(0001) and Its Interfaces

NASA Astrophysics Data System (ADS)

Sandin, Andreas Axel Tomas

A two dimensional network of sp2 bonded carbon atoms is defined as graphene. This novel material possesses remarkable electronic properties due to its unique band structure at the vicinity of the Fermi energy. The toughest challenge to bring use of graphene electronic properties in device geometries is that graphene is exceptionally sensitive to its electrical environment for integration into macroscopic system of electrical contacts and substrates. One of the most promising substrates for graphene is the polar surfaces of SiC for the reason it can be grown epitaxially by sublimating Si from the top-most SiC atomic layers. In this work, the interfaces of graphene grown on the Si-terminated polar surface SiC(0001) is studied in UHV using scanning tunneling microscopy (STM), scanning tunneling spectroscopy (STS), low energy electron diffraction (LEED) and auger electron Spectroscopy (AES). STM is used image the graphene surface and interfaces with the capability of atomic resolution. LEED is used to study surface atomic reciprocal ordering and AES is used to determine surface atomic composition during the graphene formation. Interfacial layer (Buffer layer), Single layer graphene and bilayer graphene are identified electronically by means of probing the first member of the image potential derived state. This state is found by dZ/dV spectroscopy in the high energy unoccupied states and is exceptionally sensitive to electrostatic changes to the surface which is detected by energy shifts of image potential states (IPS). This sensitivity is utilized to probe the graphene screening of external electric fields by varying the electric field in the tunneling junction and addresses the fact that charged impurity scattering is likely to be crucial for epitaxial graphene on SiC(0001) when it comes to transport parameters. Shifts of IPS energy position has also been used verify work function changes for identification of several Sodium Intercalation structures of epitaxial graphene. STS, STM along with DFT calculations are used to determine the interface location of Sodium, SiC-bufferlayer or bufferlayer-graphene intercalation. In this thesis, STM, and STS are used to study the interactions of paramagnetic FePc molecules with epitaxial graphene. The molecules, FePc, is found to interact with the graphene substrate where STM images show substrate induced orientation of FePc densely packed square lattice structure. At sub-monolayer coverages, FePc form a molecular gas at room temperature suggesting a low diffusion barrier on the graphene lattice. The substrate interaction is probed by STS and show an abnormally low LUMO energy that suggest strong electronic coupling between graphene and FePc. DFT calculations support the experimental observations and predict a spin-dependent molecule-graphene hybridization close to the Fermi energy in unoccupied states. For majority spins, DFT demonstrates the Dirac cone splits and a delocalized hybrid state is found in the band gap. For minority spin the Dirac cone is intact with energy of Dirac point empty. In addition, a novel method of improving UHV graphene growth on SiC(0001) is presented. During growth the SiC surface is exposed to atomic hydrogen which allows selective etching of Si over Carbon. This result in more uniform non-thermal formation of the buffer layer with many fewer defects and thus leads to nearly pit-free and defect-free thermal graphene layers.

Thermoelectric Properties of Epitaxial β-FeSi2 Thin Films on Si(111) and Approach for Their Enhancement

NASA Astrophysics Data System (ADS)

Taniguchi, Tatsuhiko; Sakane, Shunya; Aoki, Shunsuke; Okuhata, Ryo; Ishibe, Takafumi; Watanabe, Kentaro; Suzuki, Takeyuki; Fujita, Takeshi; Sawano, Kentarou; Nakamura, Yoshiaki

2017-05-01

We have investigated the intrinsic thermoelectric properties of epitaxial β-FeSi2 thin films and the impact of phosphorus (P) doping. Epitaxial β-FeSi2 thin films with single phase were grown on Si(111) substrates by two different techniques in an ultrahigh-vacuum molecular beam epitaxy (MBE) system: solid-phase epitaxy (SPE), where iron silicide films formed by codeposition of Fe and Si at room temperature were recrystallized by annealing at 530°C to form epitaxial β-FeSi2 thin films on Si(111) substrates, and MBE of β-FeSi2 thin films on epitaxial β-FeSi2 templates formed on Si(111) by reactive deposition epitaxy (RDE) at 530°C (RDE + MBE). Epitaxial SPE thin films based on codeposition had a flatter surface and more abrupt β-FeSi2/Si(111) interface than epitaxial RDE + MBE thin films. We investigated the intrinsic thermoelectric properties of the epitaxial β-FeSi2 thin films on Si(111), revealing lower thermal conductivity and higher electrical conductivity compared with bulk β-FeSi2. We also investigated the impact of doping on the Seebeck coefficient of bulk and thin-film β-FeSi2. A route to enhance the thermoelectric performance of β-FeSi2 is proposed, based on (1) fabrication of thin-film structures for high electrical conductivity and low thermal conductivity, and (2) proper choice of doping for high Seebeck coefficient.

Overlayer growth and electronic properties of the Bi/GaSb(110) interface

NASA Astrophysics Data System (ADS)

Gavioli, Luca; Betti, Maria Grazia; Casarini, Paolo; Mariani, Carlo

1995-06-01

The overlayer growth and electronic properties of the Bi/GaSb(110) interface and of the two-dimensional ordered (1×1)- and (1×2)-Bi layers have been investigated by complementary spectroscopic techniques (high-resolution electron-energy-loss, photoemission, and Auger spectroscopy). Bismuth forms an epitaxial monolayer, followed by island formation (Stranski-Krastanov growth mode) covering an average surface area of 40% at a nominal coverage of 4 ML. The (1×2)-symmetry stable structural phase, obtained after annealing at ~220 °C, corresponds to an average nominal Bi coverage of about 0.7 ML, suggesting an atomic geometry different from the epitaxial-continued layer structure. The disposal of Bi atoms in the (1×2) structure should build up an ``open'' layer, as the Ga-related surface exciton quenched in the (1×1) epitaxial monolayer is present in the (1×2) stable phase. The two symmetry phases are characterized by strong absorption features at 1 eV [(1×1)-Bi] and 0.54 eV [(1×2)-Bi], related to interband electronic transitions between Bi-induced electronic states. The major Bi-related occupied electronic levels, present in the valence band of the (1×1)- and (1×2)-Bi layer, have been detected by angle-integrated ultraviolet photoemission spectroscopy. Both the (1×1) and (1×2) phases show a metallic nature, with a low density of electronic states at the Fermi level. Schottky barrier heights of 0.20 and 0.14 eV are estimated for the epitaxial (1×1)- and (1×2)-symmetry stage, respectively, by analyzing the space-charge layer conditions through the study of the dopant-induced free-carrier plasmon in the GaSb substrate.

Chemical beam epitaxy for high efficiency photovoltaic devices

NASA Technical Reports Server (NTRS)

Bensaoula, A.; Freundlich, A.; Vilela, M. F.; Medelci, N.; Renaud, P.

1994-01-01

InP-based multijunction tandem solar cells show great promise for the conversion efficiency (eta) and high radiation resistance. InP and its related ternary and quanternary compound semiconductors such as InGaAs and InGaAsP offer desirable combinations for energy bandgap values which are very suitable for multijunction tandem solar cell applications. The monolithically integrated InP/In(0.53)Ga(0.47)As tandem solar cells are expected to reach efficiencies above 30 percent. Wanlass, et.al., have reported AMO efficiencies as high as 20.1% for two terminal cells fabricated using atmospheric-pressure metalorganic vapor phase epitaxy (APMOVPE). The main limitations in their technique are first related to the degradation of the intercell ohmic contact (IOC), in this case the In(0.53)Ga(0.47)As tunnel junction during the growth of the top InP subcell structure, and second to the current matching, often limited by the In(0.53)Ga(0.47)As bottom subcell. Chemical beam epitaxy (CBE) has been shown to allow the growth of high quality materials with reproducible complex compositional and doping profiles. The main advantage of CBE compared to metalorganic chemical vapor deposition (MOCVD), the most popular technique for InP-based photovoltaic device fabrication, is the ability to grow high purity epilayers at much lower temperatures (450 C - 530 C). In a recent report it was shown that cost-wise CBE is a breakthrough technology for photovoltaic (PV) solar energy progress in the energy conversion efficiency of InP-based solar cells fabricated using chemical beam epitaxy. This communication summarizes our recent results on PV devices and demonstrates the strength of this new technology.

Bandpass of microwave signals in a system of orthogonal magnetostatic-wave antennas

NASA Astrophysics Data System (ADS)

Zavisliak, I. V.; Zagorodnii, V. V.

1990-12-01

Experimental results are presented on a system consisting of MSW receive and transmit antennas integrated with a 36.7-micron-thick epitaxial YIG film. The amplitude-frequency response of this system was investigated for different values of magnetization parameters, and it was shown that the system has the property of selective transmittivity only in a narrow band of angles, phi = 48-53 deg.

Electron Beam "Writes" Silicon On Sapphire

NASA Technical Reports Server (NTRS)

Heinemann, Klaus

1988-01-01

Method of growing silicon on sapphire substrate uses beam of electrons to aid growth of semiconductor material. Silicon forms as epitaxial film in precisely localized areas in micron-wide lines. Promising fabrication method for fast, densely-packed integrated circuits. Silicon deposited preferentially in contaminated substrate zones and in clean zone irradiated by electron beam. Electron beam, like surface contamination, appears to stimulate decomposition of silane atmosphere.

Stacked Metal Silicide/Silicon Far-Infrared Detectors

NASA Technical Reports Server (NTRS)

Maserjian, Joseph

1988-01-01

Selective doping of silicon in proposed metal silicide/silicon Schottky-barrier infrared photodetector increases maximum detectable wavelength. Stacking layers to form multiple Schottky barriers increases quantum efficiency of detector. Detectors of new type enhance capabilities of far-infrared imaging arrays. Grows by molecular-beam epitaxy on silicon waferscontaining very-large-scale integrated circuits. Imaging arrays of detectors made in monolithic units with image-preprocessing circuitry.

Logic Gates Made of N-Channel JFETs and Epitaxial Resistors

NASA Technical Reports Server (NTRS)

Krasowski, Michael J.

2008-01-01

Prototype logic gates made of n-channel junction field-effect transistors (JFETs) and epitaxial resistors have been demonstrated, with a view toward eventual implementation of digital logic devices and systems in silicon carbide (SiC) integrated circuits (ICs). This development is intended to exploit the inherent ability of SiC electronic devices to function at temperatures from 300 to somewhat above 500 C and withstand large doses of ionizing radiation. SiC-based digital logic devices and systems could enable operation of sensors and robots in nuclear reactors, in jet engines, near hydrothermal vents, and in other environments that are so hot or radioactive as to cause conventional silicon electronic devices to fail. At present, current needs for digital processing at high temperatures exceed SiC integrated circuit production capabilities, which do not allow for highly integrated circuits. Only single to small number component production of depletion mode n-channel JFETs and epitaxial resistors on a single substrate is possible. As a consequence, the fine matching of components is impossible, resulting in rather large direct-current parameter distributions within a group of transistors typically spanning multiples of 5 to 10. Add to this the lack of p-channel devices to complement the n-channel FETs, the lack of precise dropping diodes, and the lack of enhancement mode devices at these elevated temperatures and the use of conventional direct coupled and buffered direct coupled logic gate design techniques is impossible. The presented logic gate design is tolerant of device parameter distributions and is not hampered by the lack of complementary devices or dropping diodes. In addition to n-channel JFETs, these gates include level-shifting and load resistors (see figure). Instead of relying on precise matching of parameters among individual JFETS, these designs rely on choosing the values of these resistors and of supply potentials so as to make the circuits perform the desired functions throughout the ranges over which the parameters of the JFETs are distributed. The supply rails V(sub dd) and V(sub ss) and the resistors R are chosen as functions of the distribution of direct-current operating parameters of the group of transistors used.

Sacrificial template method of fabricating a nanotube

DOEpatents

Yang, Peidong [Berkeley, CA; He, Rongrui [Berkeley, CA; Goldberger, Joshua [Berkeley, CA; Fan, Rong [El Cerrito, CA; Wu, Yi-Ying [Albany, CA; Li, Deyu [Albany, CA; Majumdar, Arun [Orinda, CA

2007-05-01

Methods of fabricating uniform nanotubes are described in which nanotubes were synthesized as sheaths over nanowire templates, such as using a chemical vapor deposition process. For example, single-crystalline zinc oxide (ZnO) nanowires are utilized as templates over which gallium nitride (GaN) is epitaxially grown. The ZnO templates are then removed, such as by thermal reduction and evaporation. The completed single-crystalline GaN nanotubes preferably have inner diameters ranging from 30 nm to 200 nm, and wall thicknesses between 5 and 50 nm. Transmission electron microscopy studies show that the resultant nanotubes are single-crystalline with a wurtzite structure, and are oriented along the <001> direction. The present invention exemplifies single-crystalline nanotubes of materials with a non-layered crystal structure. Similar "epitaxial-casting" approaches could be used to produce arrays and single-crystalline nanotubes of other solid materials and semiconductors. Furthermore, the fabrication of multi-sheath nanotubes are described as well as nanotubes having multiple longitudinal segments.

Laser induced OMCVD growth of AlGaAs on GaAs

NASA Technical Reports Server (NTRS)

Wilt, David M.; Warner, Joseph D.; Aron, Paul R.; Pouch, John J.; Hoffman, Richard W., Jr.

1987-01-01

A major factor limiting the efficiency of the GaAs-GaAlAs solar cell is the rate of recombination at the GaAs-AlGaAs interface. Evidence has been previously reported which indicates that recombination at this interface can be greatly reduced if the AlGaAs layer is grown at lower than normal temperatures. The authors examine the epitaxial growth of AlGaAs on GaAs using a horizontal OMCVD reactor and an excimer laser operating in the UV (lambda = 193 nm) region. The growth temperatures were 450 and 500 C. The laser beam was utilized in two orientations: 75 deg angle of incidence and parallel to the substrate. Film composition and structure were determined by Auger electron spectroscopy (AES) and transmission electron microscopy (TEM). Auger analysis of epilayers grown at 500 C with the laser impinging show no carbon or oxygen contamination of the epitaxial layers or interfaces. TEM diffraction patterns of these same epilayers exhibit single crystal (100) zone axis patterns.

The Low Temperature Epitaxy of Strained GeSn Layers Using RTCVD System

NASA Astrophysics Data System (ADS)

Kil, Yeon-Ho; Yuk, Sim-Hoon; Jang, Han-Soo; Lee, Sang-Geul; Choi, Chel-Jong; Shim, Kyu-Hwan

2018-03-01

We have investigated the low temperature (LT) growth of GeSn-Ge-Si structures using rapid thermal chemical vapor deposition system utilizing Ge2H6 and SnCl4 as the reactive precursors. Due to inappropriate phenomena, such as, Ge etch and Sn segregation, it was hard to achieve high quality GeSn epitaxy at the temperature > 350 °C. On the contrary, we found that the SnCl4 promoted the reaction of Ge2H6 precursors in a certain process condition of LT, 240-360 °C. In return, we could perform the growth of GeSn epi layer with 7.7% of Sn and its remaining compressive strain of 71.7%. The surface propagated defects were increased with increasing the Sn content in the GeSn layer confirmed by TEM analysis. And we could calculate the activation energies at lower GeSn growth temperature regime using by Ge2H6 and SnCl4 precursors about 0.43 eV.

Engineering future light emitting diodes and photovoltaics with inexpensive materials: Integrating ZnO and Si into GaN-based devices

NASA Astrophysics Data System (ADS)

Bayram, C.; Shiu, K. T.; Zhu, Y.; Cheng, C. W.; Sadana, D. K.; Teherani, F. H.; Rogers, D. J.; Sandana, V. E.; Bove, P.; Zhang, Y.; Gautier, S.; Cho, C.-Y.; Cicek, E.; Vashaei, Z.; McClintock, R.; Razeghi, M.

2013-03-01

Indium Gallium Nitride (InGaN) based PV have the best fit to the solar spectrum of any alloy system and emerging LED lighting based on InGaN technology and has the potential to reduce energy consumption by nearly one half while enabling significant carbon emission reduction. However, getting the maximum benefit from GaN diode -based PV and LEDs will require wide-scale adoption. A key bottleneck for this is the device cost, which is currently dominated by the substrate (i.e. sapphire) and the epitaxy (i.e. GaN). This work investigates two schemes for reducing such costs. First, we investigated the integration of Zinc Oxide (ZnO) in InGaN-based diodes. (Successful growth of GaN on ZnO template layers (on sapphire) was illustrated. These templates can then be used as sacrificial release layers for chemical lift-off. Such an approach provides an alternative to laser lift-off for the transfer of GaN to substrates with a superior cost-performance profile, plus an added advantage of reclaiming the expensive single-crystal sapphire. It was also illustrated that substitution of low temperature n-type ZnO for n-GaN layers can combat indium leakage from InGaN quantum well active layers in inverted p-n junction structures. The ZnO overlayers can also double as transparent contacts with a nanostructured surface which enhances light in/out coupling. Thus ZnO was confirmed to be an effective GaN substitute which offers added flexibility in device design and can be used in order to simultaneously reduce the epitaxial cost and boost the device performance. Second, we investigated the use of GaN templates on patterned Silicon (100) substrates for reduced substrate cost LED applications. Controlled local metal organic chemical vapor deposition epitaxy of cubic phase GaN with on-axis Si(100) substrates was illustrated. Scanning electron microscopy and transmission electron microscopy techniques were used to investigate uniformity and examine the defect structure in the GaN. Our results suggest that groove structures are very promising for controlled local epitaxy of cubic phase GaN. Overall, it is concluded that there are significant opportunities for cost reduction in novel hybrid diodes based on ZnO-InGaN-Si hybridization.

Monolithic integration of InGaN segments emitting in the blue, green, and red spectral range in single ordered nanocolumns

DOE Office of Scientific and Technical Information (OSTI.GOV)

Albert, S.; Bengoechea-Encabo, A.; Sanchez-Garcia, M. A.

This work reports on the selective area growth by plasma-assisted molecular beam epitaxy and characterization of InGaN/GaN nanocolumnar heterostructures. The optimization of the In/Ga and total III/V ratios, as well as the growth temperature, provides control on the emission wavelength, either in the blue, green, or red spectral range. An adequate structure tailoring and monolithic integration in a single nanocolumnar heterostructure of three InGaN portions emitting in the red-green-blue colors lead to white light emission.

Epitaxy of spin injectors and their application toward spin-polarized lasers

NASA Astrophysics Data System (ADS)

Holub, Michael A.

Spintronics is an emerging; multidisciplinary field which examines the role of electron and nuclear spin in solid-state physics. Recent experiments suggest that the spin degree of freedom may be exploited to enhance the functionality of conventional semi conductor devices. Such endeavors require methods for efficient spin injection; spin transport, and spin detection in semiconductor heterostructures. This dissertation investigates the molecular-beam epitaxial growth and properties of ferromagnetic materials for electrical spin injection. Spin-injecting contacts are incorporated into prototype spintronic devices and their performance is examined. Two classes of materials may be used for spin injection into semiconductors: dilute magnetic semiconductor and ferromagnetic metals. The low-temperature growth and properties of (Al)Gal4nAs and In(Ga)MnAs epilayers and nanostructures are investigated, and a technique for the self-organized growth of Mn-doped InAs quantum dots is developed. The epitaxial growth of (Fe,MnAs)/(Al)GaAs Schottky tunnel barriers for electron spin injection is also investigated. The spin-injection efficiency of these contacts is assessed using a spin-valve or spin-polarized light-emitting diode. Lateral MnAs/GaAs spin-valves where Schottky tunnel barriers enable all-electrical spin injection and detection are grown, fabricated, and characterized. The Rowell criteria confirm that tunneling is the dominant, transport mechanism for the Schottky tunnel contacts. A peak magnetoresistance of 3.6% at 10 K and 1.1% at 125 K are observed for a 0.5 pin channel length spin-valve. Measurements using non-local spin-valves and other control devices verify that spurious contributions from anisotropic magnetoresistance and local Hall effects are negligible. Spin-polarized lasers offer inherent polarization control, reduced chirp, and lower threshold currents and are expected to outperform their charge-based counterparts. Initial efforts to realize a spin-VCSEL utilize (Ga,Mn)As spin aligners for hole spin injection. The polarization of the laser emission is dominated by dichroic absorption in the ferromagnetic (Ga,Mn)As spin-aligner layer, which greatly complicates the verification of spin injection. Significant spin-dependent effects are observed in a spin-VCSEL utilizing epitaxially regrown Fe/AlGaAs Schottky tunnel barriers. A maximum degree of circular polarization of 23% and corresponding threshold current reduction of 11% are measured for a 15 mum Fe spin-VCSEL at 50 K. A cavity spin polarization of 16.8% is estimated from rate equation analysis.

Epitaxial growth of hybrid nanostructures

NASA Astrophysics Data System (ADS)

Tan, Chaoliang; Chen, Junze; Wu, Xue-Jun; Zhang, Hua

2018-02-01

Hybrid nanostructures are a class of materials that are typically composed of two or more different components, in which each component has at least one dimension on the nanoscale. The rational design and controlled synthesis of hybrid nanostructures are of great importance in enabling the fine tuning of their properties and functions. Epitaxial growth is a promising approach to the controlled synthesis of hybrid nanostructures with desired structures, crystal phases, exposed facets and/or interfaces. This Review provides a critical summary of the state of the art in the field of epitaxial growth of hybrid nanostructures. We discuss the historical development, architectures and compositions, epitaxy methods, characterization techniques and advantages of epitaxial hybrid nanostructures. Finally, we provide insight into future research directions in this area, which include the epitaxial growth of hybrid nanostructures from a wider range of materials, the study of the underlying mechanism and determining the role of epitaxial growth in influencing the properties and application performance of hybrid nanostructures.

Electronic Transport in Ultrathin Heterostructures.

DTIC Science & Technology

1981-10-01

heterostructures, superlattices, diffusion-enhanced disorder, transport properties, molecular beam epitaxy (MBE), photoluminescence, optical absorption...tion of single and multilayer GatlAs/GaAs heterostructures by metalorganic chemical vapor deposition (MJCVD) and molecular beam epitaxy (MBE) has...fundamental nature of these clusters and their relevance to other epitaxial techniques such as molecular beam epitaxy (MBE). To further varify or

Epitaxial CuInSe2 thin films grown by molecular beam epitaxy and migration enhanced epitaxy

NASA Astrophysics Data System (ADS)

Abderrafi, K.; Ribeiro-Andrade, R.; Nicoara, N.; Cerqueira, M. F.; Gonzalez Debs, M.; Limborço, H.; Salomé, P. M. P.; Gonzalez, J. C.; Briones, F.; Garcia, J. M.; Sadewasser, S.

2017-10-01

While CuInSe2 chalcopyrite materials are mainly used in their polycrystalline form to prepare thin film solar cells, epitaxial layers have been used for the characterization of defects. Typically, epitaxial layers are grown by metal-organic vapor phase epitaxy or molecular beam epitaxy (MBE). Here we present epitaxial layers grown by migration enhanced epitaxy (MEE) and compare the materials quality to MBE grown layers. CuInSe2 layers were grown on GaAs (0 0 1) substrates by co-evaporation of Cu, In, and Se using substrate temperatures of 450 °C, 530 °C, and 620 °C. The layers were characterized by high resolution X-ray diffraction (HR-XRD), high-resolution transmission electron microscopy (HRTEM), Raman spectroscopy, and atomic force microscopy (AFM). HR-XRD and HR-TEM show a better crystalline quality of the MEE grown layers, and Raman scattering measurements confirm single phase CuInSe2. AFM shows the previously observed faceting of the (0 0 1) surface into {1 1 2} facets with trenches formed along the [1 1 0] direction. The surface of MEE-grown samples appears smoother compared to MBE-grown samples, a similar trend is observed with increasing growth temperature.

22 W coherent GaAlAs amplifier array with 400 emitters

NASA Technical Reports Server (NTRS)

Krebs, D.; Herrick, R.; No, K.; Harting, W.; Struemph, F.

1991-01-01

Greater than 22 W of optical power has been demonstrated from a multiple-emitter, traveling-wave semiconductor amplifier, with approximately 87 percent of the output at the frequency of the injection source. The device integrates, in AlGaAs graded-index separate-confinement heterostructure single quantum well (GRINSCH-SQW) epitaxy, 400 ridge waveguide amplifiers with a coherent optical signal distribution circuit on a 12 x 6 mm chip.

S-MMICs: Sub-mm-Wave Transistors and Integrated Circuits

DTIC Science & Technology

2008-09-01

Research Lab BAA DAAD19-03-R-0017 Research area 2.35: RF devices—Dr. Alfred Hung Submitted by: Mark Rodwell, Department of Electrical and Computer ...MOTIVATION / APPLICATION 3 TECHNOLOGY STATUS 4 TRANSISTOR SCALING LAWS 5 256 NM GENERATION 6 HBT POWER AMPLIFIER DEVELOPMENT 7 DRY-ETCHED EMITTER...TECHNOLOGY: 256 NM GENERATION 9 SCALED EPITAXY 11 CONCLUSIONS 12 20081103013 Executive Summary Transistor and power amplifier IC technology was

High-Frequency, 6.2 Angstrom pN Heterojunction Diodes

DTIC Science & Technology

2012-01-01

this paper were grown by solid- source molecular beam epitaxy (MBE). Here, the use of a lower- case letter (p) for the narrow bandgap layer and upper...electron and hole mobilities. High electron mobil- ity transistors ( HEMTs ) fabricated from these materials have shown good operating characteristics [1,2...Furthermore, the first monolithic microwave integrated circuits (MMICs) fabricated using 6.1 Å based HEMTs have been demonstrated [3]. New mate- rials

Integration of the ferromagnetic insulator EuO onto graphene.

PubMed

Swartz, Adrian G; Odenthal, Patrick M; Hao, Yufeng; Ruoff, Rodney S; Kawakami, Roland K

2012-11-27

We have demonstrated the deposition of EuO films on graphene by reactive molecular beam epitaxy in a special adsorption-controlled and oxygen-limited regime, which is a critical advance toward the realization of the exchange proximity interaction (EPI). It has been predicted that when the ferromagnetic insulator (FMI) EuO is brought into contact with graphene, an overlap of electronic wave functions at the FMI/graphene interface can induce a large spin splitting inside the graphene. Experimental realization of this effect could lead to new routes for spin manipulation, which is a necessary requirement for a functional spin transistor. Furthermore, EPI could lead to novel spintronic behavior such as controllable magnetoresistance, gate tunable exchange bias, and quantized anomalous Hall effect. However, experimentally, EuO has not yet been integrated onto graphene. Here we report the successful growth of high-quality crystalline EuO on highly oriented pyrolytic graphite and single-layer graphene. The epitaxial EuO layers have (001) orientation and do not induce an observable D peak (defect) in the Raman spectra. Magneto-optic measurements indicate ferromagnetism with a Curie temperature of 69 K, which is the value for bulk EuO. Transport measurements on exfoliated graphene before and after EuO deposition indicate only a slight decrease in mobility.

Guided Growth of Horizontal p-Type ZnTe Nanowires

PubMed Central

2016-01-01

A major challenge toward large-scale integration of nanowires is the control over their alignment and position. A possible solution to this challenge is the guided growth process, which enables the synthesis of well-aligned horizontal nanowires that grow according to specific epitaxial or graphoepitaxial relations with the substrate. However, the guided growth of horizontal nanowires was demonstrated for a limited number of materials, most of which exhibit unintentional n-type behavior. Here we demonstrate the vapor–liquid–solid growth of guided horizontal ZnTe nanowires and nanowalls displaying p-type behavior on four different planes of sapphire. The growth directions of the nanowires are determined by epitaxial relations between the nanowires and the substrate or by a graphoepitaxial effect that guides their growth along nanogrooves or nanosteps along the surface. We characterized the crystallographic orientations and elemental composition of the nanowires using transmission electron microscopy and photoluminescence. The optoelectronic and electronic properties of the nanowires were studied by fabricating photodetectors and top-gate thin film transistors. These measurements showed that the guided ZnTe nanowires are p-type semiconductors and are photoconductive in the visible range. The guided growth of horizontal p-type nanowires opens up the possibility of parallel nanowire integration into functional systems with a variety of potential applications not available by other means. PMID:27885331

Wide-band operation of quasi-optical distributed superconductor/insulator/superconductor mixers with epitaxial NbN/AlN/NbN junctions

NASA Astrophysics Data System (ADS)

Kohjiro, S.; Shitov, S. V.; Wang, Z.; Uzawa, Y.; Miki, S.; Kawakami, A.; Shoji, A.

2004-05-01

For the optimum design of integrated receivers operating above the gap frequency of Nb, we have designed, fabricated and tested NbN-based quasi-optical superconductor/insulator/superconductor (SIS) mixers. The mixer chip incorporates a resonant half-wavelength epitaxial NbN/AlN/NbN junction, a twin-slot antenna and their coupling circuits. We adopted two kinds of coupling circuit between the antenna and the SIS junction: one is an in-phase feed with a length of 95 µm and the other is an anti-phase feed of 30 µm length. It was found that the anti-phase mixer reveals a 3 dB bandwidth of 43% of the centre frequency; the uncorrected double-sideband receiver noise temperature TRX = 691 K at 0.91 THz and TRX = 844 K at 0.80 THz, while 17% and TRX = 1250 K at 0.79 THz for the in-phase version. Possible reasons for this difference are discussed, which could be transmission loss and its robustness with respect to the variation of junction parameters. These experimental results suggest the NbN-based distributed mixer with the anti-phase feed is a better candidate for wide-band integrated receivers operating above 0.7 THz.

Microstructure and ferroelectricity of BaTiO3 thin films on Si for integrated photonics

NASA Astrophysics Data System (ADS)

Kormondy, Kristy J.; Popoff, Youri; Sousa, Marilyne; Eltes, Felix; Caimi, Daniele; Rossell, Marta D.; Fiebig, Manfred; Hoffmann, Patrik; Marchiori, Chiara; Reinke, Michael; Trassin, Morgan; Demkov, Alexander A.; Fompeyrine, Jean; Abe, Stefan

2017-02-01

Significant progress has been made in integrating novel materials into silicon photonic structures in order to extend the functionality of photonic circuits. One of these promising optical materials is BaTiO3 or barium titanate (BTO) that exhibits a very large Pockels coefficient as required for high-speed light modulators. However, all previous demonstrations show a noticable reduction of the Pockels effect in BTO thin films deposited on silicon substrates compared to BTO bulk crystals. Here, we report on the strong dependence of the Pockels effect in BTO thin films on their microstructure, and provide guidelines on how to engineer thin films with strong electro-optic response. We employ several deposition methods such as molecular beam epitaxy and chemical vapor deposition to realize BTO thin films with different morphology and crystalline structure. While a linear electro-optic response is present even in porous, polycrystalline BTO thin films with an effective Pockels coefficient r eff = 6 pm V-1, it is maximized for dense, tetragonal, epitaxial BTO films (r eff = 140 pm V-1). By identifying the key structural predictors of electro-optic response in BTO/Si, we provide a roadmap to fully exploit the linear electro-optic effect in novel hybrid oxide/semiconductor nanophotonic devices.

Guided Growth of Horizontal p-Type ZnTe Nanowires.

PubMed

Reut, Gilad; Oksenberg, Eitan; Popovitz-Biro, Ronit; Rechav, Katya; Joselevich, Ernesto

2016-08-04

A major challenge toward large-scale integration of nanowires is the control over their alignment and position. A possible solution to this challenge is the guided growth process, which enables the synthesis of well-aligned horizontal nanowires that grow according to specific epitaxial or graphoepitaxial relations with the substrate. However, the guided growth of horizontal nanowires was demonstrated for a limited number of materials, most of which exhibit unintentional n-type behavior. Here we demonstrate the vapor-liquid-solid growth of guided horizontal ZnTe nanowires and nanowalls displaying p-type behavior on four different planes of sapphire. The growth directions of the nanowires are determined by epitaxial relations between the nanowires and the substrate or by a graphoepitaxial effect that guides their growth along nanogrooves or nanosteps along the surface. We characterized the crystallographic orientations and elemental composition of the nanowires using transmission electron microscopy and photoluminescence. The optoelectronic and electronic properties of the nanowires were studied by fabricating photodetectors and top-gate thin film transistors. These measurements showed that the guided ZnTe nanowires are p-type semiconductors and are photoconductive in the visible range. The guided growth of horizontal p-type nanowires opens up the possibility of parallel nanowire integration into functional systems with a variety of potential applications not available by other means.

Lattice-Matched Semiconductor Layers on Single Crystalline Sapphire Substrate

NASA Technical Reports Server (NTRS)

Choi, Sang; King, Glen; Park, Yeonjoon

2009-01-01

SiGe is an important semiconductor alloy for high-speed field effect transistors (FETs), high-temperature thermoelectric devices, photovoltaic solar cells, and photon detectors. The growth of SiGe layer is difficult because SiGe alloys have different lattice constants from those of the common Si wafers, which leads to a high density of defects, including dislocations, micro-twins, cracks, and delaminations. This innovation utilizes newly developed rhombohedral epitaxy of cubic semiconductors on trigonal substrates in order to solve the lattice mismatch problem of SiGe by using trigonal single crystals like sapphire (Al2O3) as substrate to give a unique growth-orientation to the SiGe layer, which is automatically controlled at the interface upon sapphire (0001). This technology is different from previous silicon on insulator (SOI) or SGOI (SiGe on insulator) technologies that use amorphous SiO2 as the growth plane. A cubic semiconductor crystal is a special case of a rhombohedron with the inter-planar angle, alpha = 90 deg. With a mathematical transformation, all rhombohedrons can be described by trigonal crystal lattice structures. Therefore, all cubic lattice constants and crystal planes (hkl) s can be transformed into those of trigonal crystal parameters. These unique alignments enable a new opportunity of perfect lattice matching conditions, which can eliminate misfit dislocations. Previously, these atomic alignments were thought to be impossible or very difficult. With the invention of a new x-ray diffraction measurement method here, growth of cubic semiconductors on trigonal crystals became possible. This epitaxy and lattice-matching condition can be applied not only to SiGe (111)/sapphire (0001) substrate relations, but also to other crystal structures and other materials, including similar crystal structures which have pointgroup rotational symmetries by 120 because the cubic (111) direction has 120 rotational symmetry. The use of slightly miscut (less than plus or minus 10 deg.) sapphire (0001) substrate can be used to improve epitaxial relationships better by providing attractive atomic steps in the epitaxial process.

Conductive and robust nitride buffer layers on biaxially textured substrates

DOEpatents

Sankar, Sambasivan [Chicago, IL; Goyal, Amit [Knoxville, TN; Barnett, Scott A [Evanston, IL; Kim, Ilwon [Skokie, IL; Kroeger, Donald M [Knoxville, TN

2009-03-31

The present invention relates to epitaxial, electrically conducting and mechanically robust, cubic nitride buffer layers deposited epitaxially on biaxially textured substrates such as metals and alloys. The invention comprises of a biaxially textured substrate with epitaxial layers of nitrides. The invention also discloses a method to form such epitaxial layers using a high rate deposition method as well as without the use of forming gases. The invention further comprises epitaxial layers of oxides on the biaxially textured nitride layer. In some embodiments the article further comprises electromagnetic devices which may have superconducting properties.

Proximity Effects of Beryllium-Doped GaN Buffer Layers on the Electronic Properties of Epitaxial AlGaN/GaN Heterostructures

DTIC Science & Technology

2010-05-17

arranged by Prof. A. Zaslavsky Keywords: Gallium nitride High electron mobility transistor Molecular beam epitaxy Homoepitaxy Doping a b s t r a c t AlGaN...GaN/Be:GaN heterostructures have been grown by rf-plasma molecular beam epitaxy on free- standing semi-insulating GaN substrates, employing...hydride vapor phase epitaxy (HVPE) grown GaN sub- strates has enabled the growth by molecular beam epitaxy (MBE) of AlGaN/GaNHEMTswith significantly

Fabrication and characterization of Bismuth-Cerium composite iron garnet epitaxial films for magneto optical applications

NASA Astrophysics Data System (ADS)

Chandra Sekhar, M.; Singh, Mahi R.

2012-10-01

The BixCe3-xFe5O12 (x = 0.8) epitaxial films of high quality were grown by means of pulsed laser deposition on paramagnetic substrates of Gadolinium Gallium Garnet. We study the modifications of substitutions in the parent garnet Y3Fe5O12 that produces a higher magneto-optical response at communication wavelengths. These films displayed a strong in plane textures which are treated in argon as well as reduced atmosphere conditions. The elemental constituents of these films were confirmed by energy dispersive-X ray analysis, elastic recoil detection system, Rutherford backscattering spectroscopy, and X-ray photoelectron spectroscopy measurements. The transmittance spectra were measured and found these films exhibit good transmittance values. The transmittance-spectra were fitted with the theoretical model and the optical constants such as refractive index and absorption edge were evaluated. The highest (negative) Faraday rotation was found for these films treated in the environment of Ar + H2. A density matrix theory has been developed for the Faraday rotation and a good agreement between the theory and experiment is found. These epitaxial garnet films can be used in a wide range of frequencies from visible to infrared spectra making them ideal for many magneto optical applications. Therefore, these films may overcome many issues in fabricating all optical isolators which is the viable solution for integrated photonics.

The Wake Shield Facility: A space experiment platform

NASA Technical Reports Server (NTRS)

Allen, Joseph P.

1991-01-01

Information is given in viewgraph form on Wakeshield, a space experiment platform. The Wake Shield Facility (WSF) flight program objectives, product applications, commercial development approach, and cooperative experiments are listed. The program objectives are to produce new industry-driven electronic, magnetic, and superconducting thin-film materials and devices both in terrestrial laboratories and in space; utilize the ultra-vacuum of space for thin film epitaxial growth and materials processing; and develop commercial space hardware for research and development and enhanced access to space.

(abstract) High-T(sub c) SNS Weak Links Using Oxide Normal Metals

NASA Technical Reports Server (NTRS)

Hunt, B. D.; Barner, J. B.; Foote, M. C.; Vasquez, R. P.

1993-01-01

This work examines device results for edge-geometry SNS weak links utilizing a variety of oxide normal metals. A comparison of the electrical properties of fabricated devices and the magnetic field response will be presented. Device reproducibility will also be discussed. This talk will also examine recent progress in fabrication of epitaxial SNS weak links on silicon-on-sapphire (SOS) substrates. SNS weak links fabricated recently are under investigation, and preliminary results on these devices will be discussed.

Deep-level traps in lightly Si-doped n-GaN on free-standing m-oriented GaN substrates

NASA Astrophysics Data System (ADS)

Yamada, H.; Chonan, H.; Takahashi, T.; Yamada, T.; Shimizu, M.

2018-04-01

In this study, we investigated the deep-level traps in Si-doped GaN epitaxial layers by metal-organic chemical vapor deposition on c-oriented and m-oriented free-standing GaN substrates. The c-oriented and m-oriented epitaxial layers, grown at a temperature of 1000 °C and V/III ratio of 1000, contained carbon atomic concentrations of 1.7×1016 and 4.0×1015 cm-3, respectively. A hole trap was observed at about 0.89 eV above the valence band maximum by minority carrier transient spectroscopy. The trap concentrations in the c-oriented and m-oriented GaN epitaxial layers were consistent with the carbon atomic concentrations from secondary ion mass spectroscopy and the yellow luminescence intensity at 2.21 eV from photoluminescence. The trap concentrations in the m-oriented GaN epitaxial layers were lower than those in the c-oriented GaN. Two electron traps, 0.24 and 0.61 eV below the conduction band (EC) minimum, were observed in the c-oriented GaN epitaxial layer. In contrast, the m-oriented GaN epitaxial layer was free from the electron trap at EC - 0.24 eV, and the trap concentration at EC - 0.61 eV in the m-oriented GaN epitaxial layer was lower than that in the c-oriented GaN epitaxial layer. The m-oriented GaN epitaxial layer exhibited fewer hole and electron traps compared to the c-oriented GaN epitaxial layers.

A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD.

PubMed

Wang, Wenliang; Wang, Haiyan; Yang, Weijia; Zhu, Yunnong; Li, Guoqiang

2016-04-22

High-quality GaN epitaxial films have been grown on Si substrates with Al buffer layer by the combination of molecular beam epitaxy (MBE) and pulsed laser deposition (PLD) technologies. MBE is used to grow Al buffer layer at first, and then PLD is deployed to grow GaN epitaxial films on the Al buffer layer. The surface morphology, crystalline quality, and interfacial property of as-grown GaN epitaxial films on Si substrates are studied systematically. The as-grown ~300 nm-thick GaN epitaxial films grown at 850 °C with ~30 nm-thick Al buffer layer on Si substrates show high crystalline quality with the full-width at half-maximum (FWHM) for GaN(0002) and GaN(102) X-ray rocking curves of 0.45° and 0.61°, respectively; very flat GaN surface with the root-mean-square surface roughness of 2.5 nm; as well as the sharp and abrupt GaN/AlGaN/Al/Si hetero-interfaces. Furthermore, the corresponding growth mechanism of GaN epitaxial films grown on Si substrates with Al buffer layer by the combination of MBE and PLD is hence studied in depth. This work provides a novel and simple approach for the epitaxial growth of high-quality GaN epitaxial films on Si substrates.

Enhanced magnetic and thermoelectric properties in epitaxial polycrystalline SrRuO3 thin films.

PubMed

Woo, Sungmin; Lee, Sang A; Mun, Hyeona; Choi, Young Gwan; Zhung, Chan June; Shin, Soohyeon; Lacotte, Morgane; David, Adrian; Prellier, Wilfrid; Park, Tuson; Kang, Won Nam; Lee, Jong Seok; Kim, Sung Wng; Choi, Woo Seok

2018-03-01

Transition metal oxide thin films show versatile electric, magnetic, and thermal properties which can be tailored by deliberately introducing macroscopic grain boundaries via polycrystalline solids. In this study, we focus on the modification of magnetic and thermal transport properties by fabricating single- and polycrystalline epitaxial SrRuO 3 thin films using pulsed laser epitaxy. Using the epitaxial stabilization technique with an atomically flat polycrystalline SrTiO 3 substrate, an epitaxial polycrystalline SrRuO 3 thin film with the crystalline quality of each grain comparable to that of its single-crystalline counterpart is realized. In particular, alleviated compressive strain near the grain boundaries due to coalescence is evidenced structurally, which induced the enhancement of ferromagnetic ordering of the polycrystalline epitaxial thin film. The structural variations associated with the grain boundaries further reduce the thermal conductivity without deteriorating the electronic transport, and lead to an enhanced thermoelectric efficiency in the epitaxial polycrystalline thin films, compared with their single-crystalline counterpart.

Monolithic integration of GaN-based light-emitting diodes and metal-oxide-semiconductor field-effect transistors.

PubMed

Lee, Ya-Ju; Yang, Zu-Po; Chen, Pin-Guang; Hsieh, Yung-An; Yao, Yung-Chi; Liao, Ming-Han; Lee, Min-Hung; Wang, Mei-Tan; Hwang, Jung-Min

2014-10-20

In this study, we report a novel monolithically integrated GaN-based light-emitting diode (LED) with metal-oxide-semiconductor field-effect transistor (MOSFET). Without additionally introducing complicated epitaxial structures for transistors, the MOSFET is directly fabricated on the exposed n-type GaN layer of the LED after dry etching, and serially connected to the LED through standard semiconductor-manufacturing technologies. Such monolithically integrated LED/MOSFET device is able to circumvent undesirable issues that might be faced by other kinds of integration schemes by growing a transistor on an LED or vice versa. For the performances of resulting device, our monolithically integrated LED/MOSFET device exhibits good characteristics in the modulation of gate voltage and good capability of driving injected current, which are essential for the important applications such as smart lighting, interconnection, and optical communication.

Conductive and robust nitride buffer layers on biaxially textured substrates

DOEpatents

Sankar, Sambasivan; Goyal, Amit; Barnett, Scott A.; Kim, Ilwon; Kroeger, Donald M.

2004-08-31

The present invention relates to epitaxial, electrically conducting and mechanically robust, cubic nitride buffer layers deposited epitaxially on biaxially textured substrates such as metal and alloys. The invention comprises of a biaxially textured substrate with epitaxial layers of nitrides. The invention also discloses a method to form such epitaxial layers using a high rate deposition method as well as without the use of forming gases. The invention further comprises epitaxial layers of oxides on the biaxially textured nitride layers. In some embodiments the article further comprises electromagnetic devices which may be super conducting properties.

Epitaxial Garnets and Hexagonal Ferrites.

DTIC Science & Technology

1982-04-20

goenv.o -,y la)ers were YIG (yttrium iron garnet ) films grown by liquid phase epitaxy w:* ( LPE ) on gadolinium gallium garnet (GGG) substrates. Magnetic...containing three epitaxial layers. In addition to the MSW work oil garnets , LPE of lithium ferrite and hexagonal fertites was studied. A substituted lead...of a stripline. The other layers are epitaxial films , generally YIG (yttrium iron garnet ) with magnetic properties adjusted by suitable modifications

Plasmonic nanohole arrays on Si-Ge heterostructures: an approach for integrated biosensors

NASA Astrophysics Data System (ADS)

Augel, L.; Fischer, I. A.; Dunbar, L. A.; Bechler, S.; Berrier, A.; Etezadi, D.; Hornung, F.; Kostecki, K.; Ozdemir, C. I.; Soler, M.; Altug, H.; Schulze, J.

2016-03-01

Nanohole array surface plasmon resonance (SPR) sensors offer a promising platform for high-throughput label-free biosensing. Integrating nanohole arrays with group-IV semiconductor photodetectors could enable low-cost and disposable biosensors compatible to Si-based complementary metal oxide semiconductor (CMOS) technology that can be combined with integrated circuitry for continuous monitoring of biosamples and fast sensor data processing. Such an integrated biosensor could be realized by structuring a nanohole array in the contact metal layer of a photodetector. We used Fouriertransform infrared spectroscopy to investigate nanohole arrays in a 100 nm Al film deposited on top of a vertical Si-Ge photodiode structure grown by molecular beam epitaxy (MBE). We find that the presence of a protein bilayer, constitute of protein AG and Immunoglobulin G (IgG), leads to a wavelength-dependent absorptance enhancement of ~ 8 %.

GaAs/AlGaAs core multishell nanowire-based light-emitting diodes on Si.

PubMed

Tomioka, Katsuhiro; Motohisa, Junichi; Hara, Shinjiroh; Hiruma, Kenji; Fukui, Takashi

2010-05-12

We report on integration of GaAs nanowire-based light-emitting-diodes (NW-LEDs) on Si substrate by selective-area metalorganic vapor phase epitaxy. The vertically aligned GaAs/AlGaAs core-multishell nanowires with radial p-n junction and NW-LED array were directly fabricated on Si. The threshold current for electroluminescence (EL) was 0.5 mA (current density was approximately 0.4 A/cm(2)), and the EL intensity superlinearly increased with increasing current injections indicating superluminescence behavior. The technology described in this letter could help open new possibilities for monolithic- and on-chip integration of III-V NWs on Si.

Novel Si-Ge-C Superlattices for More than Moore CMOS

DTIC Science & Technology

2016-03-31

diodes can be entirely formed by epitaxial growth, CMOS Active Pixel Sensors can be made with Fully-Depleted SOI CMOS . One important advantage of...a NMOS Transfer Gate (TG), which could be part of a 4T pixel APS. PPDs are preferred in CMOS image sensors for the ability of the pinning layer to...than Moore” with the creation of active photonic devices monolithically integrated with CMOS . Applications include Multispectral CMOS Image Sensors

Superconductivity in epitaxially grown self-assembled indium islands: progress towards hybrid superconductor/semiconductor optical sources

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gehl, Michael; Gibson, Ricky; Zandbergen, Sander

Currently, superconducting qubits lead the way in potential candidates for quantum computing. This is a result of the robust nature of superconductivity and the non-linear Josephson effect which make possible many types of qubits. At the same time, transferring quantum information over long distances typically relies on the use of photons as the elementary qubit. Converting between stationary electronic qubits in superconducting systems and traveling photonic qubits is a challenging yet necessary goal for the interface of quantum computing and communication. The most promising path to achieving this goal appears to be the integration of superconductivity with optically active semiconductors,more » with quantum information being transferred between the two by means of the superconducting proximity effect. Obtaining good interfaces between superconductor and semiconductor is the next obvious step for improving these hybrid systems. As a result, we report on our observation of superconductivity in self-assembled indium structures grown epitaxially on the surface of semiconductor material.« less

Ultralow Damping in Nanometer-Thick Epitaxial Spinel Ferrite Thin Films.

PubMed

Emori, Satoru; Yi, Di; Crossley, Sam; Wisser, Jacob J; Balakrishnan, Purnima P; Khodadadi, Behrouz; Shafer, Padraic; Klewe, Christoph; N'Diaye, Alpha T; Urwin, Brittany T; Mahalingam, Krishnamurthy; Howe, Brandon M; Hwang, Harold Y; Arenholz, Elke; Suzuki, Yuri

2018-06-08

Pure spin currents, unaccompanied by dissipative charge flow, are essential for realizing energy-efficient nanomagnetic information and communications devices. Thin-film magnetic insulators have been identified as promising materials for spin-current technology because they are thought to exhibit lower damping compared with their metallic counterparts. However, insulating behavior is not a sufficient requirement for low damping, as evidenced by the very limited options for low-damping insulators. Here, we demonstrate a new class of nanometer-thick ultralow-damping insulating thin films based on design criteria that minimize orbital angular momentum and structural disorder. Specifically, we show ultralow damping in <20 nm thick spinel-structure magnesium aluminum ferrite (MAFO), in which magnetization arises from Fe 3+ ions with zero orbital angular momentum. These epitaxial MAFO thin films exhibit a Gilbert damping parameter of ∼0.0015 and negligible inhomogeneous linewidth broadening, resulting in narrow half width at half-maximum linewidths of ∼0.6 mT around 10 GHz. Our findings offer an attractive thin-film platform for enabling integrated insulating spintronics.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moghadam, Reza M.; Xiao, Zhiyong; Ahmadi-Majlan, Kamyar

The epitaxial growth of multifunctional oxides on semiconductors has opened a pathway to introduce new functionalities to semiconductor device technologies. In particular, ferroelectric materials integrated on semiconductors could lead to low-power field-effect devices that can be used for logic or memory. Essential to realizing such field-effect devices is the development of ferroelectric metal-oxide-semiconductor (MOS) capacitors, in which the polarization of a ferroelectric gate is coupled to the surface potential of a semiconducting channel. Here we demonstrate that ferroelectric MOS capacitors can be realized using single crystalline SrZrxTi1-xO3 (x= 0.7) that has been epitaxially grown on Ge. We find that themore » ferroelectric properties of SrZrxTi1-xO3 are exceptionally robust, as gate layers as thin as 5 nm give rise to hysteretic capacitance-voltage characteristics that are 2 V in width. The development of ferroelectric MOS capacitors with gate thicknesses that are technologically relevant opens a pathway to realize scalable ferroelectric field-effect devices.« less

Silicon Nanosheets: Crossover between Multilayer Silicene and Diamond-like Growth Regime.

PubMed

Grazianetti, Carlo; Cinquanta, Eugenio; Tao, Li; De Padova, Paola; Quaresima, Claudio; Ottaviani, Carlo; Akinwande, Deji; Molle, Alessandro

2017-03-28

The structural and electronic properties of nanoscale Si epitaxially grown on Ag(111) can be tuned from a multilayer silicene phase, where the constitutive layers incorporate a mixed sp 2 /sp 3 bonding, to other ordinary Si phases, such as amorphous and diamond-like Si. Based on comparative scanning tunneling microscopy and Raman spectroscopy investigations, a key role in determining the nanoscale Si phase is played by the growth temperature of the epitaxial deposition on Ag(111) substrate and the presence or absence of a single-layer silicene as a seed for the successive growth. Furthermore, when integrated into a field-effect transistor device, multilayer silicene exhibits a characteristic ambipolar charge carrier transport behavior that makes it strikingly different from other conventional Si channels and suggestive of a Dirac-like character of the electronic bands of the crystal. These findings spotlight the interest in multilayer silicene as a different nanoscale Si phase for advanced nanotechnology applications such as ultrascaled nanoelectronics and nanomembranes, as well as for fundamental exploration of quantum properties.

Optimization of hetero-epitaxial growth for the threading dislocation density reduction of germanium epilayers

NASA Astrophysics Data System (ADS)

Chong, Haining; Wang, Zhewei; Chen, Chaonan; Xu, Zemin; Wu, Ke; Wu, Lan; Xu, Bo; Ye, Hui

2018-04-01

In order to suppress dislocation generation, we develop a "three-step growth" method to heteroepitaxy low dislocation density germanium (Ge) layers on silicon with the MBE process. The method is composed of 3 growth steps: low temperature (LT) seed layer, LT-HT intermediate layer as well as high temperature (HT) epilayer, successively. Threading dislocation density (TDD) of epitaxial Ge layers is measured as low as 1.4 × 106 cm-2 by optimizing the growth parameters. The results of Raman spectrum showed that the internal strain of heteroepitaxial Ge layers is tensile and homogeneous. During the growth of LT-HT intermediate layer, TDD reduction can be obtained by lowering the temperature ramping rate, and high rate deposition maintains smooth surface morphology in Ge epilayer. A mechanism based on thermodynamics is used to explain the TDD and surface morphological dependence on temperature ramping rate and deposition rate. Furthermore, we demonstrate that the Ge layer obtained can provide an excellent platform for III-V materials integrated on Si.

Transfer of Graphene Layers Grown on SiC Wafers to Other Substrates and Their Integration into Field Effect Transistors

NASA Astrophysics Data System (ADS)

Unarunotai, Sakulsuk; Murata, Yuya; Chialvo, Cesar; Kim, Hoon-Sik; MacLaren, Scott; Mason, Nadya; Petrov, Ivan; Rogers, John

2010-03-01

An approach to produce graphene films by epitaxial growth on silicon carbide substrate is promising, but its current implementation requires the use of SiC as the device substrate. We present a simple method for transferring epitaxial sheets of graphene on SiC to other substrates. The graphene was grown on the (0001) face of 6H-SiC by thermal annealing in a hydrogen atmosphere. Transfer was accomplished using a peeling process with a bilayer film of Gold/polyimide, to yield graphene with square millimeters of coverage on the target substrate. Back gated field-effect transistors fabricated on oxidized silicon substrates with Cr/Au as source-drain electrodes exhibited ambipolar characteristics with hole mobilities of ˜100 cm^2/V-s, and negligible influence of resistance at the contacts. This work was supported by the U.S. DOE, under Award No. DE-FG02-07ER46471, through the Frederick Seitz Materials Research Laboratory at the University of Illinois at Urbana-Champaign.

Transfer of Magnetic Order and Anisotropy through Epitaxial Integration of 3d and 4f Spin Systems.

PubMed

Bluschke, M; Frano, A; Schierle, E; Minola, M; Hepting, M; Christiani, G; Logvenov, G; Weschke, E; Benckiser, E; Keimer, B

2017-05-19

Resonant x-ray scattering at the Dy M_{5} and Ni L_{3} absorption edges was used to probe the temperature and magnetic field dependence of magnetic order in epitaxial LaNiO_{3}-DyScO_{3} superlattices. For superlattices with 2 unit cell thick LaNiO_{3} layers, a commensurate spiral state develops in the Ni spin system below 100 K. Upon cooling below T_{ind}=18  K, Dy-Ni exchange interactions across the LaNiO_{3}-DyScO_{3} interfaces induce collinear magnetic order of interfacial Dy moments as well as a reorientation of the Ni spins to a direction dictated by the strong magnetocrystalline anisotropy of Dy. This transition is reversible by an external magnetic field of 3 T. Tailored exchange interactions between rare-earth and transition-metal ions thus open up new perspectives for the manipulation of spin structures in metal-oxide heterostructures and devices.

Superconductivity in epitaxially grown self-assembled indium islands: progress towards hybrid superconductor/semiconductor optical sources

DOE PAGES

Gehl, Michael; Gibson, Ricky; Zandbergen, Sander; ...

2016-02-01

Currently, superconducting qubits lead the way in potential candidates for quantum computing. This is a result of the robust nature of superconductivity and the non-linear Josephson effect which make possible many types of qubits. At the same time, transferring quantum information over long distances typically relies on the use of photons as the elementary qubit. Converting between stationary electronic qubits in superconducting systems and traveling photonic qubits is a challenging yet necessary goal for the interface of quantum computing and communication. The most promising path to achieving this goal appears to be the integration of superconductivity with optically active semiconductors,more » with quantum information being transferred between the two by means of the superconducting proximity effect. Obtaining good interfaces between superconductor and semiconductor is the next obvious step for improving these hybrid systems. As a result, we report on our observation of superconductivity in self-assembled indium structures grown epitaxially on the surface of semiconductor material.« less

Optimized MCT IR-modules for high-performance imaging applications

NASA Astrophysics Data System (ADS)

Breiter, R.; Eich, D.; Figgemeier, H.; Lutz, H.; Wendler, J.; Rühlich, I.; Rutzinger, S.; Schallenberg, T.

2014-06-01

In today's typical military operations situational awareness is a key element for mission success. In contrast to what is known from conventional warfare with typical targets such as tanks, asymmetric scenarios now dominate military operations. These scenarios require improved identification capabilities, for example the assessment of threat levels posed by personnel targets. Also, it is vital to identify and reliably distinguish between combatants, non-combatants and friendly forces. To satisfy these requirements, high-definition (HD) large format systems are well suited due to their high spatial and thermal resolution combined with high contrast. Typical applications are sights for long-range surveillance, targeting and reconnaissance platforms as well as rotorcraft pilotage sight systems. In 2012 AIM presented first prototypes of large format detectors with 1280 × 1024 elements in a 15μm pitch for both spectral bands MWIR and LWIR. The modular design allows integration of different cooler types, like AIM's split linear coolers SX095 or SX040 or rotary integral types depending whatever fits best to the application. Large format FPAs have been fabricated using liquid phase epitaxy (LPE) or molecular beam epitaxy (MBE) grown MCT. To offer high resolution in a more compact configuration AIM started the development of a 1024 × 768 10μm pitch IRmodule. Keeping electro/optical performance is achieved by a higher specific charge handling capacity of the readout integrated circuit (ROIC) in a 0.18μm Si CMOS technology. The FPA size fits to a dewar cooler configuration used for 640 × 512 15μm pitch modules.

Development of buffer layer structure for epitaxial growth of (100)/(001)Pb(Zr,Ti)O3-based thin film on (111)Si wafer

NASA Astrophysics Data System (ADS)

Hayasaka, Takeshi; Yoshida, Shinya; Tanaka, Shuji

2017-07-01

This paper reports on the development of a novel buffer layer structure, (100)SrRuO3/(100)LaNiO3/(111)Pt/(111)CeO2, for the epitaxial growth of a (100)/(001)-oriented Pb(Zr,Ti)O3 (PZT)-based thin film on a (111)Si wafer. (111)Pt and (111)CeO2 were epitaxially grown on (111)Si straightforwardly. Then, the crystal orientation was forcibly changed from (111) to (100) at the LaNiO3 layer owing to its strong (100)-self-orientation property, which enabled the cube-on-cube epitaxial growth of the subsequent (100)SrRuO3 layer and preferentially (100)/(001)-oriented PZT-based thin film. The PZT-based epitaxial thin films were comprehensively characterized in terms of the crystallinity, in-plane epitaxial relationships, piezoelectricity, and so forth. This buffer layer structure for the epitaxial growth of PZT can be applied to piezoelectric micro-electro-mechanical systems (MEMS) vibrating ring gyroscopes.

Dynamic layer rearrangement during growth of layered oxide films by molecular beam epitaxy

DOE PAGES

Lee, J. H.; Luo, G.; Tung, I. C.; ...

2014-08-03

The A n+1B nO 3n+1 Ruddlesden–Popper homologous series offers a wide variety of functionalities including dielectric, ferroelectric, magnetic and catalytic properties. Unfortunately, the synthesis of such layered oxides has been a major challenge owing to the occurrence of growth defects that result in poor materials behaviour in the higher-order members. To understand the fundamental physics of layered oxide growth, we have developed an oxide molecular beam epitaxy system with in situ synchrotron X-ray scattering capability. We present results demonstrating that layered oxide films can dynamically rearrange during growth, leading to structures that are highly unexpected on the basis of themore » intended layer sequencing. Theoretical calculations indicate that rearrangement can occur in many layered oxide systems and suggest a general approach that may be essential for the construction of metastable Ruddlesden–Popper phases. Lastly, we demonstrate the utility of the new-found growth strategy by performing the first atomically controlled synthesis of single-crystalline La 3Ni 2O 7.« less

Dislocation mechanisms in stressed crystals with surface effects

NASA Astrophysics Data System (ADS)

Wu, Chi-Chin; Crone, Joshua; Munday, Lynn; Discrete Dislocation Dynamics Team

2014-03-01

Understanding dislocation properties in stressed crystals is the key for important processes in materials science, including the strengthening of metals and the stress relaxation during the growth of hetero-epitaxial structures. Despite existing experimental approaches and theories, many dislocation mechanisms with surface effects still remain elusive in experiments. Even though discrete dislocation dynamics (DDD) simulations are commonly employed to study dislocations, few demonstrate sufficient computational capabilities for massive dislocations with the combined effects of surfaces and stresses. Utilizing the Army's newly developed FED3 code, a DDD computation code coupled with finite elements, this work presents several dislocation mechanisms near different types of surfaces in finite domains. Our simulation models include dislocations in a bended metallic cantilever beam, near voids in stressed metals, as well as threading and misfit dislocations in as-grown semiconductor epitaxial layers and their quantitative inter-correlations to stress relaxation and surface instability. Our studies provide not only detailed physics of individual dislocation mechanisms, but also important collective dislocation properties such as dislocation densities and strain-stress profiles and their interactions with surfaces.

Growth control of oxygen stoichiometry in homoepitaxial SrTiO3 films by pulsed laser epitaxy in high vacuum

PubMed Central

Lee, Ho Nyung; Ambrose Seo, Sung S.; Choi, Woo Seok; Rouleau, Christopher M.

2016-01-01

In many transition metal oxides, oxygen stoichiometry is one of the most critical parameters that plays a key role in determining the structural, physical, optical, and electrochemical properties of the material. However, controlling the growth to obtain high quality single crystal films having the right oxygen stoichiometry, especially in a high vacuum environment, has been viewed as a challenge. In this work, we show that, through proper control of the plume kinetic energy, stoichiometric crystalline films can be synthesized without generating oxygen defects even in high vacuum. We use a model homoepitaxial system of SrTiO3 (STO) thin films on single crystal STO substrates. Physical property measurements indicate that oxygen vacancy generation in high vacuum is strongly influenced by the energetics of the laser plume, and it can be controlled by proper laser beam delivery. Therefore, our finding not only provides essential insight into oxygen stoichiometry control in high vacuum for understanding the fundamental properties of STO-based thin films and heterostructures, but expands the utility of pulsed laser epitaxy of other materials as well. PMID:26823119

Integration of Multi-Functional Oxide Thin Film Heterostructures with III-V Semiconductors

NASA Astrophysics Data System (ADS)

Rahman, Md. Shafiqur

Integration of multi-functional oxide thin films with semiconductors has attracted considerable attention in recent years due to their potential applications in sensing and logic functionalities that can be incorporated in future system-on-a-chip devices. III-V semiconductor, for example, GaAs, have higher saturated electron velocity and mobility allowing transistors based on GaAs to operate at a much higher frequency with less noise compared to Si. In addition, because of its direct bandgap a number of efficient optical devices are possible and by oxide integrating with other III-V semiconductors the wavelengths can be made tunable through hetero-engineering of the bandgap. This study, based on the use of SrTiO3 (STO) films grown on GaAs (001) substrates by molecular beam epitaxy (MBE) as an intermediate buffer layer for the hetero-epitaxial growth of ferromagnetic La0.7Sr 0.3MnO3 (LSMO) and room temperature multiferroic BiFeO 3 (BFO) thin films and superlattice structures using pulsed laser deposition (PLD). The properties of the multilayer thin films in terms of growth modes, lattice spacing/strain, interface structures and texture were characterized by the in-situ reflection high energy electron diffraction (RHEED). The crystalline quality and chemical composition of the complex oxide heterostructures were investigated by a combination of X-ray diffraction (XRD) and X-ray photoelectron absorption spectroscopy (XPS). Surface morphology, piezo-response with domain structure, and ferroelectric switching observations were carried out on the thin film samples using a scanning probe microscope operated as a piezoresponse force microscopy (PFM) in the contact mode. The magnetization measurements with field cooling exhibit a surprising increment in magnetic moment with enhanced magnetic hysteresis squareness. This is the effect of exchange interaction between the antiferromagnetic BFO and the ferromagnetic LSMO at the interface. The integration of BFO materials with LSMO on GaAs substrate also facilitated the demonstration of resistive random access memory (ReRAM) devices which can be faster with lower energy consumption compared to present commercial technologies. Ferroelectric switching observations using piezoresponse force microscopy show polarization switching demonstrating its potential for read-write operation in NVM devices. The ferroelectric and electrical characterization exhibit strong resistive switching with low SET/RESET voltages. Furthermore, a prototypical epitaxial field effect transistor based on multiferroic BFO as the gate dielectric and ferromagnetic LSMO as the conducting channel was also demonstrated. The device exhibits a modulation in channel conductance with high ON/OFF ratio. The measured nanostructure and physical-compositional results from the multilayer are correlated with their corresponding dielectric, piezoelectric, and ferroelectric properties. These results provide an understanding of the heteroepitaxial growth of ferroelectric (FE)-antiferromagnetic (AFM) BFO on ferromagnetic LSMO as a simple thin film or superlattice structure, integrated on STO buffered GaAs (001) with full control over the interface structure at the atomic-scale. This work also represents the first step toward the realization of magnetoelectronic devices integrated with GaAs (001).

Epitaxial Garnet Investigation; Technical Report, Foreign Travel

DTIC Science & Technology

1988-10-25

Pure yttrium iron garnet (YIG) films are grown on GGG substrates by * liquid phase epitaxy ( LPE ) in production lots. In addition, one or two...epitaxial garnet films for Philips Dr. Krumme * Dr. Doormann 3-6-87 Thomson - CSF Research Center, Orsay, France Dr. J. P. Castera Dr. P. L. Meunier all...research physicists who grow, characterize, Dr. J. Y. Beguin or use epitaxial garnet films for Thomson CSF. Dr. J. L. Rolland Dr. P. Friez The

Molecular Beam Epitaxial Regrowth of Antimonide-Based Semiconductors

DTIC Science & Technology

2011-01-01

Molecular Beam Epitaxial Regrowth of Antimonide-Based Semiconductors MATTHEW REASON,1 BRIAN R. BENNETT,1,2 RICHARD MAGNO,1 and J. BRAD BOOS1 1...2010 to 00-00-2010 4. TITLE AND SUBTITLE Molecular Beam Epitaxial Regrowth of Antimonide-Based Semiconductors 5a. CONTRACT NUMBER 5b. GRANT...Prescribed by ANSI Std Z39-18 EXPERIMENTAL PROCEDURES The samples reported in this work were grown by solid-source molecular - beam epitaxy (MBE) with

Low-temperature plasma-deposited silicon epitaxial films: Growth and properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Demaurex, Bénédicte, E-mail: benedicte.demaurex@epfl.ch; Bartlome, Richard; Seif, Johannes P.

2014-08-07

Low-temperature (≤200 °C) epitaxial growth yields precise thickness, doping, and thermal-budget control, which enables advanced-design semiconductor devices. In this paper, we use plasma-enhanced chemical vapor deposition to grow homo-epitaxial layers and study the different growth modes on crystalline silicon substrates. In particular, we determine the conditions leading to epitaxial growth in light of a model that depends only on the silane concentration in the plasma and the mean free path length of surface adatoms. For such growth, we show that the presence of a persistent defective interface layer between the crystalline silicon substrate and the epitaxial layer stems not only frommore » the growth conditions but also from unintentional contamination of the reactor. Based on our findings, we determine the plasma conditions to grow high-quality bulk epitaxial films and propose a two-step growth process to obtain device-grade material.« less

Epitaxial Electrodeposition of Methylammonium Lead Iodide Perovskites

DOE PAGES

Koza, Jakub A.; Hill, James C.; Demster, Ashley C.; ...

2015-12-16

Here, an electrochemical/chemical route is introduced to deposit both textured and epitaxial films of methylammonium lead iodide (MAPbI 3) perovskites. The perovskite films are produced by chemical conversion of lead dioxide films that have been electrodeposited as either textured or epitaxial films onto [111]-textured Au and [100] and [111] single-crystal Au substrates. The epitaxial relationships for the MAPbI 3 films are MAPbI 3(001)[010]∥PbO 2(100)<001> and MAPbI 3(110)[111]∥PbO 2(100)<001> regardless of the Au substrate orientation, because the in-plane order of the converted film is controlled by the epitaxial PbO 2 precursor film. The textured and epitaxial MAPbI 3 films both havemore » trap densities lower than and photoluminescence intensities higher than those of polycrystalline films produced by spin coating.« less

Low-temperature plasma-deposited silicon epitaxial films: Growth and properties

DOE PAGES

Demaurex, Bénédicte; Bartlome, Richard; Seif, Johannes P.; ...

2014-08-05

Low-temperature (≤ 180 °C) epitaxial growth yields precise thickness, doping, and thermal-budget control, which enables advanced-design semiconductor devices. In this paper, we use plasma-ehanced chemical vapor deposition to grow homo-epitaxial layers and study the different growth modes on crystalline silicon substrates. In particular, we determine the conditions leading to epitaxial growth in light of a model that depends only on the silane concentration in the plasma and the mean free path length of surface adatoms. For such growth, we show that the presence of a persistent defective interface layer between the crystalline silicon substrate and the epitaxial layer stems notmore » only from the growth conditions but also from unintentional contamination of the reactor. As a result of our findings, we determine the plasma conditions to grow high-quality bulk epitaxial films and propose a two-step growth process to obtain device-grade material.« less

Deposition of hydrogenated silicon clusters for efficient epitaxial growth.

PubMed

Le, Ha-Linh Thi; Jardali, Fatme; Vach, Holger

2018-06-13

Epitaxial silicon thin films grown from the deposition of plasma-born hydrogenated silicon nanoparticles using plasma-enhanced chemical vapor deposition have widely been investigated due to their potential applications in photovoltaic and nanoelectronic device technologies. However, the optimal experimental conditions and the underlying growth mechanisms leading to the high-speed epitaxial growth of thin silicon films from hydrogenated silicon nanoparticles remain far from being understood. In the present work, extensive molecular dynamics simulations were performed to study the epitaxial growth of silicon thin films resulting from the deposition of plasma-born hydrogenated silicon clusters at low substrate temperatures under realistic reactor conditions. There is strong evidence that a temporary phase transition of the substrate area around the cluster impact site to the liquid state is necessary for the epitaxial growth to take place. We predict further that a non-normal incidence angle for the cluster impact significantly facilitates the epitaxial growth of thin crystalline silicon films.

Electrical properties of solid-solution SrZrxTi1-xO3 grown epitaxially on Ge by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Moghadam, Reza; Ahmadi, Kamyar; Xiao, Z.-Y.; Hong, Xia; Ngai, Joseph

The epitaxial growth of crystalline oxides on semiconductors enables new functionalities to be introduced to semiconductor devices. In particular, dielectric and ferroelectric oxides grown epitaxially on semiconductors provide a pathway to realize ultra-low power logic and memory devices. Here we present electrical characterization of solid-solution SrZrxTi1-xO3 grown epitaxially on Ge through oxide molecular beam epitaxy. SrZrxTi1-xO3 is of particular interest since the band offset with respect to the semiconductor can be tuned through Zr content x. We will present current-voltage, capacitance-voltage and piezoforce microscopy characterization of SrZrxTi1-xO3 -Ge heterojunctions. In particular, we will discuss how the electrical characteristics of SrZrxTi1-xO3 -Ge heterojunctions evolve with respect to composition, annealing and film thickness.

Epitaxial solar cells fabrication

NASA Technical Reports Server (NTRS)

Daiello, R. V.; Robinson, P. H.; Kressel, H.

1975-01-01

Silicon epitaxy has been studied for the fabrication of solar cell structures, with the intent of optimizing efficiency while maintaining suitability for space applications. SiH2CL2 yielded good quality layers and junctions with reproducible impurity profiles. Diode characteristics and lifetimes in the epitaxial layers were investigated as a function of epitaxial growth conditions and doping profile, as was the effect of substrates and epitaxial post-gettering on lifetime. The pyrolytic decomposition of SiH4 was also used in the epitaxial formation of highly doped junction layers on bulk Si wafers. The effects of junction layer thickness and bulk background doping level on cell performance, in particular, open-circuit voltage, were investigated. The most successful solar cells were fabricated with SiH2 CL2 to grow p/n layers on n(+) substrates. The best performance was obtained from a p(+)/p/n/n(+) structure grown with an exponential grade in the n-base layer.

An InP/Si heterojunction photodiode fabricated by self-aligned corrugated epitaxial lateral overgrowth

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sun, Y. T., E-mail: yasun@kth.se; Omanakuttan, G.; Lourdudoss, S.

2015-05-25

An n-InP/p-Si heterojunction photodiode fabricated by corrugated epitaxial lateral overgrowth (CELOG) method is presented. N-InP/p-Si heterojunction has been achieved from a suitable pattern containing circular shaped openings in a triangular lattice on the InP seed layer on p-Si substrate and subsequent CELOG of completely coalesced n-InP. To avoid current path through the seed layer in the final photodiode, semi-insulating InP:Fe was grown with adequate thickness prior to n-InP growth in a low pressure hydride vapor phase epitaxy reactor. The n-InP/p-Si heterointerface was analyzed by scanning electron microscopy and Raman spectroscopy. Room temperature cross-sectional photoluminescence (PL) mapping illustrates the defect reductionmore » effect in InP grown on Si by CELOG method. The InP PL intensity measured above the InP/Si heterojunction is comparable to that of InP grown on a native planar substrate indicating low interface defect density of CELOG InP despite of 8% lattice mismatch with Si. The processed n-InP/p-Si heterojunction photodiodes show diode characteristics from the current-voltage (I-V) measurements with a dark current density of 0.324 mA/cm{sup 2} at a reverse voltage of −1 V. Under the illumination of AM1.5 conditions, the InP/Si heterojunction photodiode exhibited photovoltaic effect with an open circuit voltage of 180 mV, a short circuit current density of 1.89 mA/cm{sup 2}, an external quantum efficiency of 4.3%, and an internal quantum efficiency of 6.4%. This demonstration of epitaxially grown InP/Si heterojunction photodiode will open the door for low cost and high efficiency solar cells and photonic integration of III-Vs on silicon.« less

Growth of high-quality InGaN/GaN LED structures on (1 1 1) Si substrates with internal quantum efficiency exceeding 50%

NASA Astrophysics Data System (ADS)

Lee, JaeWon; Tak, Youngjo; Kim, Jun-Youn; Hong, Hyun-Gi; Chae, Suhee; Min, Bokki; Jeong, Hyungsu; Yoo, Jinwoo; Kim, Jong-Ryeol; Park, Youngsoo

2011-01-01

GaN-based light-emitting-diodes (LEDs) on (1 1 1) Si substrates with internal quantum efficiency (IQE) exceeding 50% have been successfully grown by metal organic vapor phase epitaxy (MOVPE). 3.5 μm thick crack-free GaN epitaxial layers were grown on the Si substrates by the re-growth method on patterned templates. Series of step-graded Al xGa 1- xN epitaxial layers were used as the buffer layers to compensate thermal tensile stresses produced during the post-growth cooling process as well as to reduce the density of threading dislocations (TDs) generated due to the lattice mismatches between III-nitride layers and the silicon substrates. The light-emitting region consisted of 1.8 μm thick n-GaN, 3 periods of InGaN/GaN superlattice, InGaN/GaN multiple quantum wells (MQWs) designed for a peak wavelength of about 455 nm, an electron blocking layer (EBL), and p-GaN. The full-widths at half-maximum (FWHM) of (0 0 0 2) and (1 0 -1 2) ω-rocking curves of the GaN epitaxial layers were 410 and 560 arcsec, respectively. Cross-sectional transmission electron microscopy (TEM) investigation revealed that the propagation of the threading dislocations was mostly limited to the interface between the last Al xGa 1- xN buffer and n-GaN layers. The density of the threading dislocations induced pits of n-GaN, as estimated by atomic force microscopy (AFM), was about 5.5×10 8 cm -2. Temperature dependent photoluminescence (PL) measurements with a relative intensity integration method were carried out to estimate the internal quantum efficiency (IQE) of the light-emitting structures grown on Si, which reached up to 55%.

Hybrid Integration of Solid-State Quantum Emitters on a Silicon Photonic Chip.

PubMed

Kim, Je-Hyung; Aghaeimeibodi, Shahriar; Richardson, Christopher J K; Leavitt, Richard P; Englund, Dirk; Waks, Edo

2017-12-13

Scalable quantum photonic systems require efficient single photon sources coupled to integrated photonic devices. Solid-state quantum emitters can generate single photons with high efficiency, while silicon photonic circuits can manipulate them in an integrated device structure. Combining these two material platforms could, therefore, significantly increase the complexity of integrated quantum photonic devices. Here, we demonstrate hybrid integration of solid-state quantum emitters to a silicon photonic device. We develop a pick-and-place technique that can position epitaxially grown InAs/InP quantum dots emitting at telecom wavelengths on a silicon photonic chip deterministically with nanoscale precision. We employ an adiabatic tapering approach to transfer the emission from the quantum dots to the waveguide with high efficiency. We also incorporate an on-chip silicon-photonic beamsplitter to perform a Hanbury-Brown and Twiss measurement. Our approach could enable integration of precharacterized III-V quantum photonic devices into large-scale photonic structures to enable complex devices composed of many emitters and photons.

Combinatorial materials synthesis and high-throughput screening: an integrated materials chip approach to mapping phase diagrams and discovery and optimization of functional materials.

PubMed

Xiang, X D

Combinatorial materials synthesis methods and high-throughput evaluation techniques have been developed to accelerate the process of materials discovery and optimization and phase-diagram mapping. Analogous to integrated circuit chips, integrated materials chips containing thousands of discrete different compositions or continuous phase diagrams, often in the form of high-quality epitaxial thin films, can be fabricated and screened for interesting properties. Microspot x-ray method, various optical measurement techniques, and a novel evanescent microwave microscope have been used to characterize the structural, optical, magnetic, and electrical properties of samples on the materials chips. These techniques are routinely used to discover/optimize and map phase diagrams of ferroelectric, dielectric, optical, magnetic, and superconducting materials.

Development of a hybrid molecular beam epitaxy deposition system for in situ surface x-ray studies

NASA Astrophysics Data System (ADS)

Andersen, Tassie K.; Cook, Seyoung; Benda, Erika; Hong, Hawoong; Marks, Laurence D.; Fong, Dillon D.

2018-03-01

A portable metalorganic gas delivery system designed and constructed to interface with an existing molecular beam epitaxy chamber at beamline 33-ID-E of the Advanced Photon Source is described. This system offers the ability to perform in situ X-ray measurements of complex oxide growth via hybrid molecular beam epitaxy. The performance of the hybrid molecular beam epitaxy system while delivering metalorganic source materials is described. The high-energy X-ray scattering capabilities of the hybrid molecular beam epitaxy system are demonstrated both on oxide films grown solely from the metalorganic source and ABO3 oxide perovskites containing elements from both the metalorganic source and a traditional effusion cell.

Dislocations limited electronic transport in hydride vapour phase epitaxy grown GaN templates: A word of caution for the epitaxial growers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chatterjee, Abhishek, E-mail: cabhishek@rrcat.gov.in; Khamari, Shailesh K.; Kumar, R.

2015-01-12

GaN templates grown by hydride vapour phase epitaxy (HVPE) and metal organic vapour phase epitaxy (MOVPE) techniques are compared through electronic transport measurements. Carrier concentration measured by Hall technique is about two orders larger than the values estimated by capacitance voltage method for HVPE templates. It is learnt that there exists a critical thickness of HVPE templates below which the transport properties of epitaxial layers grown on top of them are going to be severely limited by the density of charged dislocations lying at layer-substrate interface. On the contrary MOVPE grown templates are found to be free from such limitations.

Ordered structure of FeGe2 formed during solid-phase epitaxy

NASA Astrophysics Data System (ADS)

Jenichen, B.; Hanke, M.; Gaucher, S.; Trampert, A.; Herfort, J.; Kirmse, H.; Haas, B.; Willinger, E.; Huang, X.; Erwin, S. C.

2018-05-01

Fe3Si /Ge (Fe ,Si ) /Fe3Si thin-film stacks were grown by a combination of molecular beam epitaxy and solid-phase epitaxy (Ge on Fe3Si ). The stacks were analyzed using electron microscopy, electron diffraction, and synchrotron x-ray diffraction. The Ge(Fe,Si) films crystallize in the well-oriented, layered tetragonal structure FeGe2 with space group P 4 m m . This kind of structure does not exist as a bulk material and is stabilized by the solid-phase epitaxy of Ge on Fe3Si . We interpret this as an ordering phenomenon induced by minimization of the elastic energy of the epitaxial film.

Epitaxial CoSi2 on MOS devices

DOEpatents

Lim, Chong Wee; Shin, Chan Soo; Petrov, Ivan Georgiev; Greene, Joseph E.

2005-01-25

An Si.sub.x N.sub.y or SiO.sub.x N.sub.y liner is formed on a MOS device. Cobalt is then deposited and reacts to form an epitaxial CoSi.sub.2 layer underneath the liner. The CoSi.sub.2 layer may be formed through a solid phase epitaxy or reactive deposition epitaxy salicide process. In addition to high quality epitaxial CoSi.sub.2 layers, the liner formed during the invention can protect device portions during etching processes used to form device contacts. The liner can act as an etch stop layer to prevent excessive removal of the shallow trench isolation, and protect against excessive loss of the CoSi.sub.2 layer.

Epitaxial MoS2/GaN structures to enable vertical 2D/3D semiconductor heterostructure devices

NASA Astrophysics Data System (ADS)

Ruzmetov, D.; Zhang, K.; Stan, G.; Kalanyan, B.; Eichfeld, S.; Burke, R.; Shah, P.; O'Regan, T.; Crowne, F.; Birdwell, A. G.; Robinson, J.; Davydov, A.; Ivanov, T.

MoS2/GaN structures are investigated as a building block for vertical 2D/3D semiconductor heterostructure devices that utilize a 3D substrate (GaN) as an active component of the semiconductor device without the need of mechanical transfer of the 2D layer. Our CVD-grown monolayer MoS2 has been shown to be epitaxially aligned to the GaN lattice which is a pre-requisite for high quality 2D/3D interfaces desired for efficient vertical transport and large area growth. The MoS2 coverage is nearly 50 % including isolated triangles and monolayer islands. The GaN template is a double-layer grown by MOCVD on sapphire and allows for measurement of transport perpendicular to the 2D layer. Photoluminescence, Raman, XPS, Kelvin force probe microscopy, and SEM analysis identified high quality monolayer MoS2. The MoS2/GaN structures electrically conduct in the out-of-plane direction and across the van der Waals gap, as measured with conducting AFM (CAFM). The CAFM current maps and I-V characteristics are analyzed to estimate the MoS2/GaN contact resistivity to be less than 4 Ω-cm2 and current spreading in the MoS2 monolayer to be approx. 1 μm in diameter. Epitaxial MoS2/GaN heterostructures present a promising platform for the design of energy-efficient, high-speed vertical devices incorporating 2D layered materials with 3D semiconductors.

In Situ Observation of Oxygen Vacancy Dynamics and Ordering in the Epitaxial LaCoO3 System.

PubMed

Jang, Jae Hyuck; Kim, Young-Min; He, Qian; Mishra, Rohan; Qiao, Liang; Biegalski, Michael D; Lupini, Andrew R; Pantelides, Sokrates T; Pennycook, Stephen J; Kalinin, Sergei V; Borisevich, Albina Y

2017-07-25

Vacancy dynamics and ordering underpin the electrochemical functionality of complex oxides and strongly couple to their physical properties. In the field of the epitaxial thin films, where connection between chemistry and film properties can be most clearly revealed, the effects related to oxygen vacancies are attracting increasing attention. In this article, we report a direct, real-time, atomic level observation of the formation of oxygen vacancies in the epitaxial LaCoO 3 thin films and heterostructures under the influence of the electron beam utilizing scanning transmission electron microscopy (STEM). In the case of LaCoO 3 /SrTiO 3 superlattice, the formation of the oxygen vacancies is shown to produce quantifiable changes in the interatomic distances, as well as qualitative changes in the symmetry of the Co sites manifested as off-center displacements. The onset of these changes was observed in both the [100] pc and [110] pc orientations in real time. Additionally, annular bright field images directly show the formation of oxygen vacancy channels along [110]pc direction. In the case of 15 u.c. LaCoO 3 thin film, we observe the sequence of events during beam-induced formation of oxygen vacancy ordered phases and find them consistent with similar processes in the bulk. Moreover, we record the dynamics of the nucleation, growth, and defect interaction at the atomic scale as these transformations happen. These results demonstrate that we can track dynamic oxygen vacancy behavior with STEM, generating atomic-level quantitative information on phase transformation and oxygen diffusion.

The effect of surfactants on epitaxial growth of gallium nitride from gas phase in the Ga-HCl-NH3-H2-Ar system

NASA Astrophysics Data System (ADS)

Zhilyaev, Yu. V.; Zelenin, V. V.; Orlova, T. A.; Panteleev, V. N.; Poletaev, N. K.; Rodin, S. N.; Snytkina, S. A.

2015-05-01

We have studied epitaxial layers of gallium nitride (GaN) in a template composition grown by surfactant-mediated hydride-chloride vapor phase epitaxy. The surfactant component was provided by 5 mass % additives of antimony and indium to the source of gallium. Comparative analysis of the obtained results shows evidence of the positive influence of surfactants on the morphology of epitaxial GaN layers.

Systematic Study of p-type Doping and Related Defects in III-Nitrides: Pathway toward a Nitride HBT

DTIC Science & Technology

2012-11-20

InGaN growth where an intermediate regime does not exist.40 Considering GaN molecular - beam epitaxy (MBE) growth phase diagrams such as those...1009 (2007). 44 S. D. Burnham, Improved Understanding and Control of Magnesium-Doped Gallium Nitride by Plasma Assisted Molecular Beam Epitaxy , in...reported using a modified form of molecular beam epitaxy (MBE) called Metal-Modulated Epitaxy (MME).11, 12 The details of this shuttered technique

Wide-band (2.5 - 10.5 µm), high-frame rate IRFPAs based on high-operability MCT on silicon

NASA Astrophysics Data System (ADS)

Crosbie, Michael J.; Giess, Jean; Gordon, Neil T.; Hall, David J.; Hails, Janet E.; Lees, David J.; Little, Christopher J.; Phillips, Tim S.

2010-04-01

We have previously presented results from our mercury cadmium telluride (MCT, Hg1-xCdxTe) growth on silicon substrate technology for different applications, including negative luminescence, long waveband and mid/long dual waveband infrared imaging. In this paper, we review recent developments in QinetiQ's combined molecular beam epitaxy (MBE) and metal-organic vapor phase epitaxy (MOVPE) MCT growth on silicon; including MCT defect density, uniformity and reproducibility. We also present a new small-format (128 x 128) focal plane array (FPA) for high frame-rate applications. A custom high-speed readout integrated circuit (ROIC) was developed with a large pitch and large charge storage aimed at producing a very high performance FPA (NETD ~10mK) operating at frame rates up to 2kHz for the full array. The array design allows random addressing and this allows the maximum frame rate to be increased as the window size is reduced. A broadband (2.5-10.5 μm) MCT heterostructure was designed and grown by the MBE/MOVPE technique onto silicon substrates. FPAs were fabricated using our standard techniques; wet-etched mesa diodes passivated with epitaxial CdTe and flip-chip bonded to the ROIC. The resulting focal plane arrays were characterized at the maximum frame rate and shown to have the high operabilities and low NETD values characteristic of our LWIR MCT on silicon technology.

Molecular Beam Epitaxy Growth of High Crystalline Quality LiNbO3

NASA Astrophysics Data System (ADS)

Tellekamp, M. Brooks; Shank, Joshua C.; Goorsky, Mark S.; Doolittle, W. Alan

2016-12-01

Lithium niobate is a multi-functional material with wide reaching applications in acoustics, optics, and electronics. Commercial applications for lithium niobate require high crystalline quality currently limited to bulk and ion sliced material. Thin film lithium niobate is an attractive option for a variety of integrated devices, but the research effort has been stagnant due to poor material quality. Both lattice matched and mismatched lithium niobate are grown by molecular beam epitaxy and studied to understand the role of substrate and temperature on nucleation conditions and material quality. Growth on sapphire produces partially coalesced columnar grains with atomically flat plateaus and no twin planes. A symmetric rocking curve shows a narrow linewidth with a full width at half-maximum (FWHM) of 8.6 arcsec (0.0024°), which is comparable to the 5.8 arcsec rocking curve FWHM of the substrate, while the film asymmetric rocking curve is 510 arcsec FWHM. These values indicate that the individual grains are relatively free of long-range disorder detectable by x-ray diffraction with minimal measurable tilt and twist and represents the highest structural quality epitaxial material grown on lattice mismatched sapphire without twin planes. Lithium niobate is also grown on lithium tantalate producing high quality coalesced material without twin planes and with a symmetric rocking curve of 193 arcsec, which is nearly equal to the substrate rocking curve of 194 arcsec. The surface morphology of lithium niobate on lithium tantalate is shown to be atomically flat by atomic force microscopy.

Computational Approach for Epitaxial Polymorph Stabilization through Substrate Selection.

PubMed

Ding, Hong; Dwaraknath, Shyam S; Garten, Lauren; Ndione, Paul; Ginley, David; Persson, Kristin A

2016-05-25

With the ultimate goal of finding new polymorphs through targeted synthesis conditions and techniques, we outline a computational framework to select optimal substrates for epitaxial growth using first principle calculations of formation energies, elastic strain energy, and topological information. To demonstrate the approach, we study the stabilization of metastable VO2 compounds which provides a rich chemical and structural polymorph space. We find that common polymorph statistics, lattice matching, and energy above hull considerations recommends homostructural growth on TiO2 substrates, where the VO2 brookite phase would be preferentially grown on the a-c TiO2 brookite plane while the columbite and anatase structures favor the a-b plane on the respective TiO2 phases. Overall, we find that a model which incorporates a geometric unit cell area matching between the substrate and the target film as well as the resulting strain energy density of the film provide qualitative agreement with experimental observations for the heterostructural growth of known VO2 polymorphs: rutile, A and B phases. The minimal interfacial geometry matching and estimated strain energy criteria provide several suggestions for substrates and substrate-film orientations for the heterostructural growth of the hitherto hypothetical anatase, brookite, and columbite polymorphs. These criteria serve as a preliminary guidance for the experimental efforts stabilizing new materials and/or polymorphs through epitaxy. The current screening algorithm is being integrated within the Materials Project online framework and data and hence publicly available.

Computational Approach for Epitaxial Polymorph Stabilization through Substrate Selection

DOE PAGES

Ding, Hong; Dwaraknath, Shyam S.; Garten, Lauren; ...

2016-05-04

With the ultimate goal of finding new polymorphs through targeted synthesis conditions and techniques, we outline a computational framework to select optimal substrates for epitaxial growth using first principle calculations of formation energies, elastic strain energy, and topological information. To demonstrate the approach, we study the stabilization of metastable VO 2 compounds which provides a rich chemical and structural polymorph space. Here, we find that common polymorph statistics, lattice matching, and energy above hull considerations recommends homostructural growth on TiO 2 substrates, where the VO 2 brookite phase would be preferentially grown on the a-c TiO 2 brookite plane whilemore » the columbite and anatase structures favor the a-b plane on the respective TiO 2 phases. Overall, we find that a model which incorporates a geometric unit cell area matching between the substrate and the target film as well as the resulting strain energy density of the film provide qualitative agreement with experimental observations for the heterostructural growth of known VO 2 polymorphs: rutile, A and B phases. The minimal interfacial geometry matching and estimated strain energy criteria provide several suggestions for substrates and substrate-film orientations for the heterostructural growth of the hitherto hypothetical anatase, brookite, and columbite polymorphs. Our criteria serve as a preliminary guidance for the experimental efforts stabilizing new materials and/or polymorphs through epitaxy. The current screening algorithm is being integrated within the Materials Project online framework and data and hence publicly available.« less

Computational Approach for Epitaxial Polymorph Stabilization through Substrate Selection

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ding, Hong; Dwaraknath, Shyam S.; Garten, Lauren

With the ultimate goal of finding new polymorphs through targeted synthesis conditions and techniques, we outline a computational framework to select optimal substrates for epitaxial growth using first principle calculations of formation energies, elastic strain energy, and topological information. To demonstrate the approach, we study the stabilization of metastable VO2 compounds which provides a rich chemical and structural polymorph space. We find that common polymorph statistics, lattice matching, and energy above hull considerations recommends homostructural growth on TiO2 substrates, where the VO2 brookite phase would be preferentially grown on the a-c TiO2 brookite plane while the columbite and anatase structuresmore » favor the a-b plane on the respective TiO2 phases. Overall, we find that a model which incorporates a geometric unit cell area matching between the substrate and the target film as well as the resulting strain energy density of the film provide qualitative agreement with experimental observations for the heterostructural growth of known VO2 polymorphs: rutile, A and B phases. The minimal interfacial geometry matching and estimated strain energy criteria provide several suggestions for substrates and substrate-film orientations for the heterostructural growth of the hitherto hypothetical anatase, brookite, and columbite polymorphs. These criteria serve as a preliminary guidance for the experimental efforts stabilizing new materials and/or polymorphs through epitaxy. The current screening algorithm is being integrated within the Materials Project online framework and data and hence publicly available.« less

Computational Approach for Epitaxial Polymorph Stabilization through Substrate Selection

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ding, Hong; Dwaraknath, Shyam S.; Garten, Lauren

With the ultimate goal of finding new polymorphs through targeted synthesis conditions and techniques, we outline a computational framework to select optimal substrates for epitaxial growth using first principle calculations of formation energies, elastic strain energy, and topological information. To demonstrate the approach, we study the stabilization of metastable VO 2 compounds which provides a rich chemical and structural polymorph space. Here, we find that common polymorph statistics, lattice matching, and energy above hull considerations recommends homostructural growth on TiO 2 substrates, where the VO 2 brookite phase would be preferentially grown on the a-c TiO 2 brookite plane whilemore » the columbite and anatase structures favor the a-b plane on the respective TiO 2 phases. Overall, we find that a model which incorporates a geometric unit cell area matching between the substrate and the target film as well as the resulting strain energy density of the film provide qualitative agreement with experimental observations for the heterostructural growth of known VO 2 polymorphs: rutile, A and B phases. The minimal interfacial geometry matching and estimated strain energy criteria provide several suggestions for substrates and substrate-film orientations for the heterostructural growth of the hitherto hypothetical anatase, brookite, and columbite polymorphs. Our criteria serve as a preliminary guidance for the experimental efforts stabilizing new materials and/or polymorphs through epitaxy. The current screening algorithm is being integrated within the Materials Project online framework and data and hence publicly available.« less

History of HgTe-based photodetectors in Poland

NASA Astrophysics Data System (ADS)

Rogalski, A.

2010-09-01

In Poland, the HgCdTe studies began in 1960 at the Institute of Physics, Warsaw University. The material processing laboratory was created by Giriat and later by Dziuba, Gałązka, and others. Bridgman technique with sealed thick wall quartz ampoules was used to grow material suitable for research and experimental devices. Among the first papers published in 1961 and 1963 there were the Polish works devoted to preparation, doping, and electrical properties of HgCdTe. Infrared detector's research and development efforts in Poland were concentrated mostly on uncooled market niche. At the beginning, a modified isothermal vapour phase epitaxy has been used for research and commercial fabrication of photoconductive, photoelectromagnetic and other HgCdTe devices. Bulk growth and liquid phase epitaxy were also used. Recently, the fabrication of infrared devices relies on low temperature epitaxial technique, namely metalorganic vapour phase deposition. At present stage of development, the photoconductive and photoelectromagnetic (PEM) detectors are gradually replaced with photovoltaic devices which offer inherent advantages of no electric or magnetic bias, no heat load and no flicker noise. Potentially, photodiodes offer high performance and very fast response. However, conventional photovoltaic uncooled detectors suffer from low quantum efficiency and very low junction resistance. The problems have been solved with advanced band gap engineered architecture, multiple cell heterojunction devices connected in series, and monolithic integration of the detectors with microoptics. In final part of the paper, the Polish achievements in technology and performance of HgMnTe and HgZnTe photodetectors are presented.

Fabrication and characterization of Bismuth-Cerium composite iron garnet epitaxial films for magneto optical applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chandra Sekhar, M.; Singh, Mahi R.

2012-10-15

The Bi{sub x}Ce{sub 3-x}Fe{sub 5}O{sub 12} (x = 0.8) epitaxial films of high quality were grown by means of pulsed laser deposition on paramagnetic substrates of Gadolinium Gallium Garnet. We study the modifications of substitutions in the parent garnet Y{sub 3}Fe{sub 5}O{sub 12} that produces a higher magneto-optical response at communication wavelengths. These films displayed a strong in plane textures which are treated in argon as well as reduced atmosphere conditions. The elemental constituents of these films were confirmed by energy dispersive-X ray analysis, elastic recoil detection system, Rutherford backscattering spectroscopy, and X-ray photoelectron spectroscopy measurements. The transmittance spectra weremore » measured and found these films exhibit good transmittance values. The transmittance-spectra were fitted with the theoretical model and the optical constants such as refractive index and absorption edge were evaluated. The highest (negative) Faraday rotation was found for these films treated in the environment of Ar + H{sub 2}. A density matrix theory has been developed for the Faraday rotation and a good agreement between the theory and experiment is found. These epitaxial garnet films can be used in a wide range of frequencies from visible to infrared spectra making them ideal for many magneto optical applications. Therefore, these films may overcome many issues in fabricating all optical isolators which is the viable solution for integrated photonics.« less

Development of a Photoelectrochemical Etch Process to Enable Heterogeneous Substrate Integration of Epitaxial III-Nitride Semiconductors

DTIC Science & Technology

2017-12-01

Chung, Stephen Kelley, Kimberley Olver, Blair C. Connelly, Anand V. Sampath, and Meredith L. Reed Sensors and Electron Devices Directorate, ARL...nitride [GaN], indium nitride, and corresponding ternary alloys) provide a basis for a variety of electronic and photonic devices across several...and driven by an electron beam irradiation, which leads to high carrier densities. This necessitates the transfer/removal of the GaN substrate (or GaN

Integrated semiconductor quantum dot scintillation detector: Ultimate limit for speed and light yield

DOE PAGES

Oktyabrsky, Serge; Yakimov, Michael; Tokranov, Vadim; ...

2016-03-30

Here, a picosecond-range timing of charged particles and photons is a long-standing challenge for many high-energy physics, biophysics, medical and security applications. We present a design, technological pathway and challenges, and some properties important for realization of an ultrafast high-efficient room-temperature semiconductor scintillator based on self-assembled InAs quantum dots (QD) embedded in a GaAs matrix. Low QD density (<; 10 15 cm -3), fast (~5 ps) electron capture, luminescence peak redshifted by 0.2-0.3 eV from GaAs absorption edge with fast decay time (0.5-1 ns) along with the efficient energy transfer in the GaAs matrix (4.2 eV/pair) allows for fabrication ofmore » a semiconductor scintillator with the unsurpassed performance parameters. The major technological challenge is fabrication of a large volume (> 1 cm 3 ) of epitaxial QD medium. This requires multiple film separation and bonding, likely using separate epitaxial films as waveguides for improved light coupling. Compared to traditional inorganic scintillators, the semiconductor-QD based scintillators could have about 5x higher light yield and 20x faster decay time, opening a way to gamma detectors with the energy resolution better than 1% and sustaining counting rates MHz. Picosecond-scale timing requires segmented low-capacitance photodiodes integrated with the scintillator. For photons, the proposed detector inherently provides the depth-of-interaction information.« less

In situ spectroscopic ellipsometry study of low-temperature epitaxial silicon growth

NASA Astrophysics Data System (ADS)

Halagačka, L.; Foldyna, M.; Leal, R.; Roca i Cabarrocas, P.

2018-07-01

Low-temperature growth of doped epitaxial silicon layers is a promising way to reduce the cost of p-n junction formation in c-Si solar cells. In this work, we study process of highly doped epitaxial silicon layer growth using in situ spectroscopic ellipsometry. The film was deposited by plasma-enhanced chemical vapor deposition (PECVD) on a crystalline silicon substrate at a low substrate temperature of 200 °C. In the deposition process, SiF4 was used as a precursor, B2H6 as doping gas, and a hydrogen/argon mixture as carrier gas. A spectroscopic ellipsometer with a wide spectral range was used for in situ spectroscopic measurements. Since the temperature during process is 200 °C, the optical functions of silicon differ from these at room temperature and have to be adjusted. Thickness of the epitaxial silicon layer was fitted on in situ ellipsometric data. As a result we were able to determine the dynamics of epitaxial layer growth, namely initial layer formation time and epitaxial growth rate. This study opens new perspectives in understanding and monitoring the epitaxial silicon deposition processes as the model fitting can be applied directly during the growth.

Colloidal CdSe Quantum Rings.

PubMed

Fedin, Igor; Talapin, Dmitri V

2016-08-10

Semiconductor quantum rings are of great fundamental interest because their non-trivial topology creates novel physical properties. At the same time, toroidal topology is difficult to achieve for colloidal nanocrystals and epitaxially grown semiconductor nanostructures. In this work, we introduce the synthesis of luminescent colloidal CdSe nanorings and nanostructures with double and triple toroidal topology. The nanorings form during controlled etching and rearrangement of two-dimensional nanoplatelets. We discuss a possible mechanism of the transformation of nanoplatelets into nanorings and potential utility of colloidal nanorings for magneto-optical (e.g., Aharonov-Bohm effect) and other applications.

CMOS minimal array

NASA Astrophysics Data System (ADS)

Janesick, James; Cheng, John; Bishop, Jeanne; Andrews, James T.; Tower, John; Walker, Jeff; Grygon, Mark; Elliot, Tom

2006-08-01

A high performance prototype CMOS imager is introduced. Test data is reviewed for different array formats that utilize 3T photo diode, 5T pinned photo diode and 6T photo gate CMOS pixel architectures. The imager allows several readout modes including progressive scan, snap and windowed operation. The new imager is built on different silicon substrates including very high resistivity epitaxial wafers for deep depletion operation. Data products contained in this paper focus on sensor's read noise, charge capacity, charge transfer efficiency, thermal dark current, RTS dark spikes, QE, pixel cross- talk and on-chip analog circuitry performance.

Diamond heteroepitaxial lateral overgrowth

DOE PAGES

Tang, Y. -H.; Bi, B.; Golding, B.

2015-02-24

A method of diamond heteroepitaxial lateral overgrowth is demonstrated which utilizes a photolithographic metal mask to pattern a thin (001) epitaxial diamond surface. Significant structural improvement was found, with a threading dislocation density reduced by two orders of magnitude at the top surface of a thick overgrown diamond layer. In the initial stage of overgrowth, a reduction of diamond Raman linewidth in the overgrown area was also realized. Thermally-induced stress and internal stress were determined by Raman spectroscopy of adhering and delaminated diamond films. As a result, the internal stress is found to decrease as sample thickness increases.

Optical NOR gate

DOEpatents

Skogen, Erik J [Albuquerque, NM; Tauke-Pedretti, Anna [Albuquerque, NM

2011-09-06

An optical NOR gate is formed from two pair of optical waveguide devices on a substrate, with each pair of the optical waveguide devices consisting of an electroabsorption modulator electrically connected in series with a waveguide photodetector. The optical NOR gate utilizes two digital optical inputs and a continuous light input to provide a NOR function digital optical output. The optical NOR gate can be formed from III-V compound semiconductor layers which are epitaxially deposited on a III-V compound semiconductor substrate, and operates at a wavelength in the range of 0.8-2.0 .mu.m.

Silicon Carbide Epitaxial Films Studied by Atomic Force Microscopy

NASA Technical Reports Server (NTRS)

1996-01-01

Silicon carbide (SiC) holds great potential as an electronic material because of its wide band gap energy, high breakdown electric field, thermal stability, and resistance to radiation damage. Possible aerospace applications of high-temperature, high-power, or high-radiation SiC electronic devices include sensors, control electronics, and power electronics that can operate at temperatures up to 600 C and beyond. Commercially available SiC devices now include blue light-emitting diodes (LED's) and high-voltage diodes for operation up to 350 C, with other devices under development. At present, morphological defects in epitaxially grown SiC films limit their use in device applications. Research geared toward reducing the number of structural inhomogeneities can benefit from an understanding of the type and nature of problems that cause defects. The Atomic Force Microscope (AFM) has proven to be a useful tool in characterizing defects present on the surface of SiC epitaxial films. The in-house High-Temperature Integrated Electronics and Sensors (HTIES) Program at the NASA Lewis Research Center not only extended the dopant concentration range achievable in epitaxial SiC films, but it reduced the concentration of some types of defects. Advanced structural characterization using the AFM was warranted to identify the type and structure of the remaining film defects and morphological inhomogeneities. The AFM can give quantitative information on surface topography down to molecular scales. Acquired, in part, in support of the Advanced High Temperature Engine Materials Technology Program (HITEMP), the AFM had been used previously to detect partial fiber debonding in composite material cross sections. Atomic force microscopy examination of epitaxial SiC film surfaces revealed molecular-scale details of some unwanted surface features. Growth pits propagating from defects in the substrate, and hillocks due, presumably, to existing screw dislocations in the substrates, were imaged. Away from local defects, step bunching was observed to yield step heights of hundreds of angstroms, with possible implications for the uniformity of dopants incorporated in SiC devices during fabrication. The quantitative topographic data from the AFM allow the relevant defect information to be extracted, such as the size and distribution of step bunching and the Burgers vector of screw dislocations. These atomic force microscopy results have furthered the understanding of the dynamic epitaxial SiC growth process. A model describing the observed hillock step bunching has been proposed. This cooperation between researchers involved in crystal growth, electronic device fabrication, and surface structural characterization is likely to continue as atomic force microscopy is used to improve SiC films for high-temperature electronic devices for NASA's advanced turbine engines and space power devices, as well as for future applications in the automotive industry.

Epitaxy of GaN in high aspect ratio nanoscale holes over silicon substrate

NASA Astrophysics Data System (ADS)

Wang, Kejia; Wang, Anqi; Ji, Qingbin; Hu, Xiaodong; Xie, Yahong; Sun, Ying; Cheng, Zhiyuan

2017-12-01

Dislocation filtering in gallium nitride (GaN) by epitaxial growth through patterned nanoscale holes is studied. GaN grown from extremely high aspect ratio holes by metalorganic chemical vapor deposition is examined by transmission electron microscopy and high-resolution transmission electron microscopy. This selective area epitaxial growth method with a reduced epitaxy area and an increased depth to width ratio of holes leads to effective filtering of dislocations within the hole and improves the quality of GaN significantly.

Molecular-beam epitaxy of (Zn,Mn)Se on Si(100)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Slobodskyy, T.; Ruester, C.; Fiederling, R.

2004-12-20

We have investigated the growth by molecular-beam epitaxy of the II-VI diluted magnetic semiconductor (Zn,Mn)Se on As-passivated Si(100) substrates. The growth start has been optimized by using low-temperature epitaxy. Surface properties were assessed by Nomarski and scanning electron microscopy. Optical properties of (Zn,Mn)Se have been studied by photoluminescence and a giant Zeeman splitting of up to 30 meV has been observed. Our observations indicate a high crystalline quality of the epitaxial films.

Electroless epitaxial etching for semiconductor applications

DOEpatents

McCarthy, Anthony M.

2002-01-01

A method for fabricating thin-film single-crystal silicon on insulator substrates using electroless etching for achieving efficient etch stopping on epitaxial silicon substrates. Microelectric circuits and devices are prepared on epitaxial silicon wafers in a standard fabrication facility. The wafers are bonded to a holding substrate. The silicon bulk is removed using electroless etching leaving the circuit contained within the epitaxial layer remaining on the holding substrate. A photolithographic operation is then performed to define streets and wire bond pad areas for electrical access to the circuit.

All Ultra-High Vacuum In-Situ Growth & Processing Approaches to Realization of Semiconductor Nanostructure Arrays

DTIC Science & Technology

1997-05-15

Quantum Box/Dot, Strained Epitaxy , 3D islands, Patterned Substrates, Molecular Beam Epitaxy Focused Ion Beam , In-Situ Processing, Quantum Box Lasers...Grown on Planar and Patterned GaAs(100) Substrates by Molecular Beam Epitaxy ", J. Vac. Sei. Technol. B13, 642(1995) 5. A. Madhukar, P. Chen, Q. Xie...Formation and Vertical Self-Organization on GaAs(lOO) via Molecular Beam Epitaxy ", Paper presented at MRS Spring 󈨣 Meeting (Apr. 17-21, 1995, San

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Metal-organic vapor phase epitaxy of (GaAl)As for 0.85-μm laser diodes

NASA Astrophysics Data System (ADS)

Jacobs, K.; Bugge, F.; Butzke, G.; Lehmann, L.; Schimko, R.

1988-11-01

Metal-organic vapor phase epitaxy was used to grow stripe heterolaser diodes that were hitherto fabricated by liquid phase epitaxy. The main relationships between the growth parameters (partial input pressures, temperatures) and the properties of materials (thicknesses, solid-solution compositions, carrier densities) were investigated. The results were in full agreement with the mechanism of growth controlled by a vapor-phase diffusion. The results achieved routinely in the growth of GaAs are reported. It is shown that double heterostructure laser diodes fabricated by metal-organic vapor phase epitaxy compete favorably with those grown so far by liquid phase epitaxy, including their degradation and reliability.

Development of a hybrid molecular beam epitaxy deposition system for in situ surface x-ray studies

DOE PAGES

Andersen, Tassie K.; Cook, Seyoung; Benda, Erika; ...

2018-03-08

A portable metalorganic gas delivery system designed and constructed to interface with an existing molecular beam epitaxy chamber at beamline 33-ID-E of the Advanced Photon Source is described. This system offers the ability to perform in situ X-ray measurements of complex oxide growth via hybrid molecular beam epitaxy. The performance of the hybrid molecular beam epitaxy system while delivering metalorganic source materials is described. In conclusion, the high-energy X-ray scattering capabilities of the hybrid molecular beam epitaxy system are demonstrated both on oxide films grown solely from the metalorganic source and ABO 3 oxide perovskites containing elements from both themore » metalorganic source and a traditional effusion cell.« less

Development of a hybrid molecular beam epitaxy deposition system for in situ surface x-ray studies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Andersen, Tassie K.; Cook, Seyoung; Benda, Erika

A portable metalorganic gas delivery system designed and constructed to interface with an existing molecular beam epitaxy chamber at beamline 33-ID-E of the Advanced Photon Source is described. This system offers the ability to perform in situ X-ray measurements of complex oxide growth via hybrid molecular beam epitaxy. The performance of the hybrid molecular beam epitaxy system while delivering metalorganic source materials is described. In conclusion, the high-energy X-ray scattering capabilities of the hybrid molecular beam epitaxy system are demonstrated both on oxide films grown solely from the metalorganic source and ABO 3 oxide perovskites containing elements from both themore » metalorganic source and a traditional effusion cell.« less

Applying CLIPS to control of molecular beam epitaxy processing

NASA Technical Reports Server (NTRS)

Rabeau, Arthur A.; Bensaoula, Abdelhak; Jamison, Keith D.; Horton, Charles; Ignatiev, Alex; Glover, John R.

1990-01-01

A key element of U.S. industrial competitiveness in the 1990's will be the exploitation of advanced technologies which involve low-volume, high-profit manufacturing. The demands of such manufacture limit participation to a few major entities in the U.S. and elsewhere, and offset the lower manufacturing costs of other countries which have, for example, captured much of the consumer electronics market. One such technology is thin-film epitaxy, a technology which encompasses several techniques such as Molecular Beam Epitaxy (MBE), Chemical Beam Epitaxy (CBE), and Vapor-Phase Epitaxy (VPE). Molecular Beam Epitaxy (MBE) is a technology for creating a variety of electronic and electro-optical materials. Compared to standard microelectronic production techniques (including gaseous diffusion, ion implantation, and chemical vapor deposition), MBE is much more exact, though much slower. Although newer than the standard technologies, MBE is the technology of choice for fabrication of ultraprecise materials for cutting-edge microelectronic devices and for research into the properties of new materials.

Domain matched epitaxial growth of (111) Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} thin films on (0001) Al{sub 2}O{sub 3} with ZnO buffer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Krishnaprasad, P. S., E-mail: pskrishnaprasu@gmail.com, E-mail: mkj@cusat.ac.in; Jayaraj, M. K., E-mail: pskrishnaprasu@gmail.com, E-mail: mkj@cusat.ac.in; Antony, Aldrin

2015-03-28

Epitaxial (111) Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} (BST) thin films have been grown by pulsed laser deposition on (0001) Al{sub 2}O{sub 3} substrate with ZnO as buffer layer. The x-ray ω-2θ, Φ-scan and reciprocal space mapping indicate epitaxial nature of BST thin films. The domain matched epitaxial growth of BST thin films over ZnO buffer layer was confirmed using Fourier filtered high resolution transmission electron microscope images of the film-buffer interface. The incorporation of ZnO buffer layer effectively suppressed the lattice mismatch and promoted domain matched epitaxial growth of BST thin films. Coplanar inter digital capacitors fabricated on epitaxial (111) BSTmore » thin films show significantly improved tunable performance over polycrystalline thin films.« less

Surface and Thin Film Analysis during Metal Organic Vapour Phase Epitaxial Growth

NASA Astrophysics Data System (ADS)

Richter, Wolfgang

2007-06-01

In-situ analysis of epitaxial growth is the essential ingredient in order to understand the growth process, to optimize growth and last but not least to monitor or even control the epitaxial growth on a microscopic scale. In MBE (molecular beam epitaxy) in-situ analysis tools existed right from the beginning because this technique developed from Surface Science technology with all its electron based analysis tools (LEED, RHEED, PES etc). Vapour Phase Epitaxy, in contrast, remained for a long time in an empirical stage ("alchemy") because only post growth characterisations like photoluminescence, Hall effect and electrical conductivity were available. Within the last two decades, however, optical techniques were developed which provide similar capabilities as in MBE for Vapour Phase growth. I will discuss in this paper the potential of Reflectance Anisotropy Spectroscopy (RAS) and Spectroscopic Ellipsometry (SE) for the growth of thin epitaxial semiconductor layers with zincblende (GaAs etc) and wurtzite structure (GaN etc). Other techniques and materials will be also mentioned.

Stable Electrical Operation of 6H-SiC JFETs and ICs for Thousands of Hours at 500 C

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Spry, David J.; Chen, Liang-Yu; Beheim, Glenn M.; Okojie, Robert S.; Chang, Carl W.; Meredith, Roger D.; Ferrier, Terry L.; Evans, Laura J.; Krasowski, Michael J.;

Compliant heterogeneous assemblies of micro-VCSELs as a new materials platform for integrated optoelectronics

NASA Astrophysics Data System (ADS)

Kang, Dongseok; Lee, Sung-Min; Kwong, Anthony; Yoon, Jongseung

2015-03-01

Despite many unique advantages, vertical cavity surface emitting lasers (VCSELs) have been available mostly on rigid, planar wafers over restricted areas, thereby limiting their usage for applications that can benefit from large-scale, programmable assemblies, hybrid integration with dissimilar materials and devices, or mechanically flexible constructions. Here, materials design and fabrication strategies that address these limitations of conventional VCSELs are presented. Specialized design of epitaxial materials and etching processes, together with printing-based deterministic assemblies and substrate thermal engineering, enabled defect-free release of microscale VCSELs and their device- and circuit-level implementation on non-native, flexible substrates with performance comparable to devices on the growth substrate.

Color mixing from monolithically integrated InGaN-based light-emitting diodes by local strain engineering

NASA Astrophysics Data System (ADS)

Chung, Kunook; Sui, Jingyang; Demory, Brandon; Ku, Pei-Cheng

2017-07-01

Additive color mixing across the visible spectrum was demonstrated from an InGaN based light-emitting diode (LED) pixel comprising red, green, and blue subpixels monolithically integrated and enabled by local strain engineering. The device was fabricated using a top-down approach on a metal-organic chemical vapor deposition-grown sample consisting of a typical LED epitaxial stack. The three color subpixels were defined in a single lithographic step. The device was characterized for its electrical properties and emission spectra under an uncooled condition, which is desirable in practical applications. The color mixing was controlled by pulse-width modulation, and the degree of color control was also characterized.

Vertical III-V nanowire device integration on Si(100).

PubMed

Borg, Mattias; Schmid, Heinz; Moselund, Kirsten E; Signorello, Giorgio; Gignac, Lynne; Bruley, John; Breslin, Chris; Das Kanungo, Pratyush; Werner, Peter; Riel, Heike

2014-01-01

We report complementary metal-oxide-semiconductor (CMOS)-compatible integration of compound semiconductors on Si substrates. InAs and GaAs nanowires are selectively grown in vertical SiO2 nanotube templates fabricated on Si substrates of varying crystallographic orientations, including nanocrystalline Si. The nanowires investigated are epitaxially grown, single-crystalline, free from threading dislocations, and with an orientation and dimension directly given by the shape of the template. GaAs nanowires exhibit stable photoluminescence at room temperature, with a higher measured intensity when still surrounded by the template. Si-InAs heterojunction nanowire tunnel diodes were fabricated on Si(100) and are electrically characterized. The results indicate a high uniformity and scalability in the fabrication process.

Monolithically Integrated Reconfigurable Filters for Microwave Photonic Links

NASA Astrophysics Data System (ADS)

Norberg, Erik J.

For the purposes of commercial communication and military electronic warfare and radar alike, there is an increasing interest in RF systems that can handle very wide instantaneous bandwidths at high center frequencies. Optical signal processing has the capability to reduce latency, improve size, weight and power (SwAP) performance, and overcome the inherent bandwidth limitations of electronic counterparts. By rapidly pre-filtering wide bandwidth microwave signals in the optical domain, the analog-to-digital conversion (ADC) and subsequent digital signal processing (DSP) can be significantly relieved. Compared to channelizing and add/drop filters for wavelength division multiplexing (WDM) applications, the microwave filter application is much more challenging as it requires a more versatile filter, ideally with tunability in both frequency and bandwidth. In this work such a filter was developed using integrated photonics. By integrating the filter on a single InP chip, the stability required for coherent filtering is met, while the active integration platform offers a flexible filter design and higher tolerance in the coupler and fabrication specifications. Using an entirely deep etched fabrication with a single blanket regrowth, a simple fabrication with high yield is achieved. The reconfigurable filter is designed as an array of uncoupled filter stages with each filter stage reconfigurable as a filter pole or zero with arbitrary magnitude and phase. This gives rise to a flexible ffilter synthesis, much like an optical version of DSP filters. Flat-topped bandpass filters are demonstrated with frequency tunability over 30 GHz, bandwidth adjustable between 1.9 and 5.4 GHz, and stopband rejection >32 dB. In order to meet the stringent spurious-free dynamic range (SFDR) requirements of the microwave application, a novel epitaxial layer integration platform is developed. Optimized for high optical saturation power and low propagation loss, it produces semiconductor optical amplifiers (SOAs) with low distortion and noise. Utilizing a novel characterization method of RF signal distortion for photonic devices, SOAs with state-of-the art SFDR in the range of 115 dB--Hz2/3 and a noise figure of 3.8 dB for 6 dB gain, is demonstrated. It is projected that this platform could ultimately provide integration for photonic microwave filter applications.

Room-temperature Domain-epitaxy of Copper Iodide Thin Films for Transparent CuI/ZnO Heterojunctions with High Rectification Ratios Larger than 109

NASA Astrophysics Data System (ADS)

Yang, Chang; Kneiß, Max; Schein, Friedrich-Leonhard; Lorenz, Michael; Grundmann, Marius

2016-02-01

CuI is a p-type transparent conductive semiconductor with unique optoelectronic properties, including wide band gap (3.1 eV), high hole mobility (>40 cm2 V-1 s-1 in bulk), and large room-temperature exciton binding energy (62 meV). The difficulty in epitaxy of CuI is the main obstacle for its application in advanced solid-state electronic devices. Herein, room-temperature heteroepitaxial growth of CuI on various substrates with well-defined in-plane epitaxial relations is realized by reactive sputtering technique. In such heteroepitaxial growth the formation of rotation domains is observed and hereby systematically investigated in accordance with existing theoretical study of domain-epitaxy. The controllable epitaxy of CuI thin films allows for the combination of p-type CuI with suitable n-type semiconductors with the purpose to fabricate epitaxial thin film heterojunctions. Such heterostructures have superior properties to structures without or with weakly ordered in-plane orientation. The obtained epitaxial thin film heterojunction of p-CuI(111)/n-ZnO(00.1) exhibits a high rectification up to 2 × 109 (±2 V), a 100-fold improvement compared to diodes with disordered interfaces. Also a low saturation current density down to 5 × 10-9 Acm-2 is formed. These results prove the great potential of epitaxial CuI as a promising p-type optoelectronic material.

Self-organization of quantum-dot pairs by high-temperature droplet epitaxy

PubMed Central

Holmes, Kyland; Mazur, Yuriy I; Ramsey, Kimberly A; Salamo, Gregory J

2006-01-01

The spontaneously formation of epitaxial GaAs quantum-dot pairs was demonstrated on an AlGaAs surface using Ga droplets as a Ga nano-source. The dot pair formation was attributed to the anisotropy of surface diffusion during high-temperature droplet epitaxy.

Defect-Induced Nucleation and Epitaxy: A New Strategy toward the Rational Synthesis of WZ-GaN/3C-SiC Core-Shell Heterostructures.

PubMed

Liu, Baodan; Yang, Bing; Yuan, Fang; Liu, Qingyun; Shi, Dan; Jiang, Chunhai; Zhang, Jinsong; Staedler, Thorsten; Jiang, Xin

2015-12-09

In this work, we demonstrate a new strategy to create WZ-GaN/3C-SiC heterostructure nanowires, which feature controllable morphologies. The latter is realized by exploiting the stacking faults in 3C-SiC as preferential nucleation sites for the growth of WZ-GaN. Initially, cubic SiC nanowires with an average diameter of ∼100 nm, which display periodic stacking fault sections, are synthesized in a chemical vapor deposition (CVD) process to serve as the core of the heterostructure. Subsequently, hexagonal wurtzite-type GaN shells with different shapes are grown on the surface of 3C-SiC wire core. In this context, it is possible to obtain two types of WZ-GaN/3C-SiC heterostructure nanowires by means of carefully controlling the corresponding CVD reactions. Here, the stacking faults, initially formed in 3C-SiC nanowires, play a key role in guiding the epitaxial growth of WZ-GaN as they represent surface areas of the 3C-SiC nanowires that feature a higher surface energy. A dedicated structural analysis of the interfacial region by means of high-resolution transmission electron microscopy (HRTEM) revealed that the disordering of the atom arrangements in the SiC defect area promotes a lattice-matching with respect to the WZ-GaN phase, which results in a preferential nucleation. All WZ-GaN crystal domains exhibit an epitaxial growth on 3C-SiC featuring a crystallographic relationship of [12̅10](WZ-GaN) //[011̅](3C-SiC), (0001)(WZ-GaN)//(111)(3C-SiC), and d(WZ-GaN(0001)) ≈ 2d(3C-SiC(111)). The approach to utilize structural defects of a nanowire core to induce a preferential nucleation of foreign shells generally opens up a number of opportunities for the epitaxial growth of a wide range of semiconductor nanostructures which are otherwise impossible to acquire. Consequently, this concept possesses tremendous potential for the applications of semiconductor heterostructures in various fields such as optics, electrics, electronics, and photocatalysis for energy harvesting and environment processing.

Enhanced performance of solution-processed broadband photodiodes by epitaxially blending MAPbBr3 quantum dots and ternary PbSxSe1-x quantum dots as the active layer.

PubMed

Sulaman, Muhammad; Yang, Shengyi; Jiang, Yurong; Tang, Yi; Zou, Bingsuo

2017-12-15

Organic-inorganic hybrid photodetectors attract more and more interest, since they can combine the advantages of both organic and inorganic materials into one device, and broadband photodetectors are widely used in many scientific and industrial fields. In this work, we demonstrate the enhanced-performance solution-processed broadband photodiodes by epitaxially blending organo-lead halide perovskite (MAPbBr 3 ) colloidal quantum dots (CQDs) with ternary PbS x Se 1-x CQDs as the active layer. As a result, the interfacial features of the hetero-epitaxial nanocomposite MAPbBr 3 :PbS x Se 1-x enables the design and perception of functionalities that are not available for the single-phase constituents or layered devices. By combining the high electrical transport properties of MAPbBr 3 QDs with the highly radiative efficiency of PbS 0.4 Se 0.6 QDs, the photodiodes ITO/ZnO/PbS 0.4 Se 0.6 :MAPbBr 3 /Au exhibit a maximum photoresponsivity and specific detectivity of 21.48 A W -1 and 3.59 × 10 13 Jones, 22.16 A W -1 and 3.70 × 10 13 Jones at room temperature under 49.8 μW cm -2 532 nm laser and 62 μW cm -2 980 nm laser, respectively. This is higher than that of the layered photodiodes ITO/ZnO/PbS 0.4 Se 0.6 /MAPbBr 3 /Au, pure perovskite (MAPbBr 3 ) (or PbS 0.4 Se 0.6 ) QD-based photodiodes reported previously, and it is also better than the traditional inorganic semiconductor-based photodetectors. Our experimental results indicate that epitaxially-aligned nanocomposites (MAPbBr 3 :PbS x Se 1-x ) exhibit remarkable optoelectronic properties that are traceable to their atomic-scale crystalline coherence, and one can utilize the excellent photocarrier diffusion from PbS x Se 1-x into the perovskite to enhance the device performance from the UV-visible to infrared region.

Enhanced performance of solution-processed broadband photodiodes by epitaxially blending MAPbBr3 quantum dots and ternary PbSxSe1-x quantum dots as the active layer

NASA Astrophysics Data System (ADS)

Sulaman, Muhammad; Yang, Shengyi; Jiang, Yurong; Tang, Yi; Zou, Bingsuo

2017-12-01

Organic-inorganic hybrid photodetectors attract more and more interest, since they can combine the advantages of both organic and inorganic materials into one device, and broadband photodetectors are widely used in many scientific and industrial fields. In this work, we demonstrate the enhanced-performance solution-processed broadband photodiodes by epitaxially blending organo-lead halide perovskite (MAPbBr3) colloidal quantum dots (CQDs) with ternary PbSxSe1-x CQDs as the active layer. As a result, the interfacial features of the hetero-epitaxial nanocomposite MAPbBr3:PbSxSe1-x enables the design and perception of functionalities that are not available for the single-phase constituents or layered devices. By combining the high electrical transport properties of MAPbBr3 QDs with the highly radiative efficiency of PbS0.4Se0.6 QDs, the photodiodes ITO/ZnO/PbS0.4Se0.6:MAPbBr3/Au exhibit a maximum photoresponsivity and specific detectivity of 21.48 A W-1 and 3.59 × 1013 Jones, 22.16 A W-1 and 3.70 × 1013 Jones at room temperature under 49.8 μW cm-2 532 nm laser and 62 μW cm-2 980 nm laser, respectively. This is higher than that of the layered photodiodes ITO/ZnO/PbS0.4Se0.6/MAPbBr3/Au, pure perovskite (MAPbBr3) (or PbS0.4Se0.6) QD-based photodiodes reported previously, and it is also better than the traditional inorganic semiconductor-based photodetectors. Our experimental results indicate that epitaxially-aligned nanocomposites (MAPbBr3:PbSxSe1-x) exhibit remarkable optoelectronic properties that are traceable to their atomic-scale crystalline coherence, and one can utilize the excellent photocarrier diffusion from PbSxSe1-x into the perovskite to enhance the device performance from the UV-visible to infrared region.

Geiger-Mode Avalanche Photodiode Arrays Integrated to All-Digital CMOS Circuits

DTIC Science & Technology

2016-01-20

Figure 7 4×4 GMAPD array wire bonded to CMOS timing circuits Figure 8 Low‐fill‐factor APD design used in lidar sensors The APD doping...epitaxial growth and the pixels are isolated by mesa etch. 128×32 lidar image sensors were built by bump bonding the APD arrays to a CMOS timing...passive image sensor with this large a format based on hybridization of a GMAPD array to a CMOS readout. Fig. 14 shows one of the first images taken

Investigation of layered structure SAW devices fabricated using low temperature grown AlN thin film on GaN/sapphire.

PubMed

Lin, Hui-Feng; Wu, Chun-Te; Chien, Wei-Cheng; Chen, Sheng-Wen; Kao, Hui-Ling; Chyi, Jen-Inn; Chen, Jyh-Shin

2005-05-01

Epitaxial AlN films have been grown on GaN/sapphire using helicon sputtering at 300 degrees C. The surface acoustic wave (SAW) filters fabricated on AlN/GaN/sapphire exhibit more superior characteristics than those made on GaN/sapphire. This composite structure of AlN on GaN may bring about the development of high-frequency components, which integrate and use their semiconducting, optoelectronic, and piezoelectric properties.

Rhombohedral Super Hetero Epitaxy of Cubic SiGe on Trigonal c-plane Sapphire

NASA Technical Reports Server (NTRS)

Choi, Sang H.; Duzik, Adam J.

2017-01-01

New rhombohedral super-hetero-epitaxy technology was developed at NASA. This epitaxy technology enables the growth of unprecedented cubic-trigonal hybrid single crystal structures with lattice match on sapphire (Al2O3) substrates, hence with little strain and very few defects at the interface.

Bipolar Cascade Vertical-Cavity Surface-Emitting Lasers for RF Photonic Link Applications

DTIC Science & Technology

2007-09-01

6 IV Current versus Voltage . . . . . . . . . . . . . . . . . . . . . 7 MBE Molecular Beam Epitaxy ...of carrying maximum photocur- rent. Numerous material parameters have been studied. Growth parameters for molecular beam epitaxy (MBE), metal-organic...12 MOCVD Metal-Organic Chemical Vapor Deposition . . . . . . . . . . 12 CBE Chemical Beam Epitaxy . . . . . . . . . . . . . . . . . . . . 12 LPE

A proposal for epitaxial thin film growth in outer space

NASA Technical Reports Server (NTRS)

Ignatiev, Alex; Chu, C. W.

1988-01-01

A new concept for materials processing in space exploits the ultravacuum component of space for thin film epitaxial growth. The unique low earth orbit space environment is expected to yield 10 to the -14th torr or better pressures, semiinfinite pumping speeds, and large ultravacuum volume without walls. These space ultravacuum properties promise major improvement in the quality, unique nature, and the throughput of epitaxially grown materials. Advanced thin film materials to be epitaxially grown in space include semiconductors, magnetic materials, and thin film high temperature superconductors.

Epitaxial Growth and Cracking Mechanisms of Thermally Sprayed Ceramic Splats

NASA Astrophysics Data System (ADS)

Chen, Lin; Yang, Guan-jun

2018-02-01

In the present study, the epitaxial growth and cracking mechanisms of thermally sprayed ceramic splats were explored. We report, for the first time, the epitaxial growth of various splat/substrate combinations at low substrate temperatures (100 °C) and large lattice mismatch (- 11.26%). Our results suggest that thermal spray deposition was essentially a liquid-phase epitaxy, readily forming chemical bonding. The interface temperature was also estimated. The results convincingly demonstrated that atoms only need to diffuse and rearrange over a sufficiently short range during extremely rapid solidification. Concurrently, severe cracking occurred in the epitaxial splat/substrate systems, which indicated high tensile stress was produced during splat deposition. The origin of the tensile stress was attributed to the strong constraint of the locally heated substrate by its cold surroundings.

In situ transmission electron microscopy study on the epitaxial growth of CoSi2 on Si(111) at temperatures below 150 C

NASA Technical Reports Server (NTRS)

Nieh, C. W.; Lin, T. L.

1989-01-01

This paper reports an in situ transmission electron microscopy study on the epitaxial growth of CoSi2 on Si(111) from a 10-nm-thick amorphous mixture of Co and Si in the ratio 1:2, which was formed by codeposition of Co and Si near room temperature. Nuclei of CoSi2 are observed in the as-deposited film. These nuclei are epitaxial and extend through the whole film thickness. Upon annealing, these columnar epitaxial CoSi2 grains grow laterally at temperatures as low as 50 C. The kinetics of this lateral epitaxial growth was studied at temperatures between 50 and 150 C. The activation energy of the growth process is 0.8 + or - 0.1 eV.

van der Waals epitaxial ZnTe thin film on single-crystalline graphene

NASA Astrophysics Data System (ADS)

Sun, Xin; Chen, Zhizhong; Wang, Yiping; Lu, Zonghuan; Shi, Jian; Washington, Morris; Lu, Toh-Ming

2018-01-01

Graphene template has long been promoted as a promising host to support van der Waals flexible electronics. However, van der Waals epitaxial growth of conventional semiconductors in planar thin film form on transferred graphene sheets is challenging because the nucleation rate of film species on graphene is significantly low due to the passive surface of graphene. In this work, we demonstrate the epitaxy of zinc-blende ZnTe thin film on single-crystalline graphene supported by an amorphous glass substrate. Given the amorphous nature and no obvious remote epitaxy effect of the glass substrate, this study clearly proves the van der Waals epitaxy of a 3D semiconductor thin film on graphene. X-ray pole figure analysis reveals the existence of two ZnTe epitaxial orientational domains on graphene, a strong X-ray intensity observed from the ZnTe [ 1 ¯ 1 ¯ 2] ǁ graphene [10] orientation domain, and a weaker intensity from the ZnTe [ 1 ¯ 1 ¯ 2] ǁ graphene [11] orientation domain. Furthermore, this study systematically investigates the optoelectronic properties of this epitaxial ZnTe film on graphene using temperature-dependent Raman spectroscopy, steady-state and time-resolved photoluminescence spectroscopy, and fabrication and characterization of a ZnTe-graphene photodetector. The research suggests an effective approach towards graphene-templated flexible electronics.

Telecom-Wavelength Bottom-up Nanobeam Lasers on Silicon-on-Insulator.

PubMed

Kim, Hyunseok; Lee, Wook-Jae; Farrell, Alan C; Balgarkashi, Akshay; Huffaker, Diana L

2017-09-13

Semiconductor nanowire lasers are considered promising ultracompact and energy-efficient light sources in the field of nanophotonics. Although the integration of nanowire lasers onto silicon photonic platforms is an innovative path toward chip-scale optical communications and photonic integrated circuits, operating nanowire lasers at telecom-wavelengths remains challenging. Here, we report on InGaAs nanowire array lasers on a silicon-on-insulator platform operating up to 1440 nm at room temperature. Bottom-up photonic crystal nanobeam cavities are formed by growing nanowires as ordered arrays using selective-area epitaxy, and single-mode lasing by optical pumping is demonstrated. We also show that arrays of nanobeam lasers with individually tunable wavelengths can be integrated on a single chip by the simple adjustment of the lithographically defined growth pattern. These results exemplify a practical approach toward nanowire lasers for silicon photonics.

Oriented graphene nanoribbons embedded in hexagonal boron nitride trenches

PubMed Central

Chen, Lingxiu; He, Li; Wang, Hui Shan; Wang, Haomin; Tang, Shujie; Cong, Chunxiao; Xie, Hong; Li, Lei; Xia, Hui; Li, Tianxin; Wu, Tianru; Zhang, Daoli; Deng, Lianwen; Yu, Ting; Xie, Xiaoming; Jiang, Mianheng

2017-01-01

Graphene nanoribbons (GNRs) are ultra-narrow strips of graphene that have the potential to be used in high-performance graphene-based semiconductor electronics. However, controlled growth of GNRs on dielectric substrates remains a challenge. Here, we report the successful growth of GNRs directly on hexagonal boron nitride substrates with smooth edges and controllable widths using chemical vapour deposition. The approach is based on a type of template growth that allows for the in-plane epitaxy of mono-layered GNRs in nano-trenches on hexagonal boron nitride with edges following a zigzag direction. The embedded GNR channels show excellent electronic properties, even at room temperature. Such in-plane hetero-integration of GNRs, which is compatible with integrated circuit processing, creates a gapped channel with a width of a few benzene rings, enabling the development of digital integrated circuitry based on GNRs. PMID:28276532

Phototransistor based on single In2Se3 nanosheets

NASA Astrophysics Data System (ADS)

Li, Qin-Liang; Liu, Chang-Hai; Nie, Yu-Ting; Chen, Wen-Hua; Gao, Xu; Sun, Xu-Hui; Wang, Sui-Dong

2014-11-01

Micrometer-sized single-crystalline In2Se3 nanosheets are synthesized by epitaxial growth from In2Se3 nanowires. The In2Se3 nanosheets possess anisotropic structural configuration with intralayer covalent bonding and interlayer van der Waals bonding. Phototransistors based on the In2Se3 nanosheets are realized, and the devices show high photoresponsivity and high photo On/Off ratio up to two orders. The photo-gating effect can be modulated by the gate bias, indicating potential utility of the In2Se3 nanosheets in a variety of optoelectronic applications.Micrometer-sized single-crystalline In2Se3 nanosheets are synthesized by epitaxial growth from In2Se3 nanowires. The In2Se3 nanosheets possess anisotropic structural configuration with intralayer covalent bonding and interlayer van der Waals bonding. Phototransistors based on the In2Se3 nanosheets are realized, and the devices show high photoresponsivity and high photo On/Off ratio up to two orders. The photo-gating effect can be modulated by the gate bias, indicating potential utility of the In2Se3 nanosheets in a variety of optoelectronic applications. Electronic supplementary information (ESI) available: SEM images of typical In2Se3 nanosheets, TEM-EDX spectrum of single In2Se3 nanosheets, STEM image and elemental mapping of an In2Se3 nanosheet, Scherrer sizes of In2Se3 nanosheets derived from the XRD pattern, statistics of In2Se3 nanosheet thickness, and photoresponse of an In2Se3 nanosheet phototransistor. See DOI: 10.1039/c4nr04404e

OM-VPE growth of Mg-doped GaAs. [OrganoMetallic-Vapor Phase Epitaxy

NASA Technical Reports Server (NTRS)

Lewis, C. R.; Dietze, W. T.; Ludowise, M. J.

1982-01-01

The epitaxial growth of Mg-doped GaAs by the organometallic vapor phase epitaxial process (OM-VPE) has been achieved for the first time. The doping is controllable over a wide range of input fluxes of bis (cyclopentadienyl) magnesium, (C5H5)2Mg, the organometallic precursor to Mg.

Efficient Interlayer Relaxation and Transition of Excitons in Epitaxial and Non-epitaxial MoS2/WS2 Heterostructures

DOE PAGES

Yu, Yifei; Hu, Shi; Su, Liqin; ...

2014-12-03

Semiconductor heterostructurs provide a powerful platform for the engineering of excitons. Here we report on the excitonic properties of two-dimensional (2D) heterostructures that consist of monolayer MoS2 and WS2 stacked epitaxially or non-epitaxially in the vertical direction. We find similarly efficient interlayer relaxation and transition of excitons in both the epitaxial and non-epitaxial heterostructures. This is manifested by a two orders of magnitude decrease in the photoluminescence and an extra absorption peak at low energy region of both heterostructures. The MoS2/WS2 heterostructures show weak interlayer coupling and essentially act as an atomic-scale heterojunction with the intrinsic band structures of themore » two monolayers largely preserved. They are particularly promising for the applications that request efficient dissociation of excitons and strong light absorption, including photovoltaics, solar fuels, photodetectors, and optical modulators. Our results also indicate that 2D heterostructures promise to provide capabilities to engineer excitons from the atomic level without concerns of interfacial imperfection.« less

Weakly doped InP layers prepared by liquid phase epitaxy using a modulated cooling rate

NASA Astrophysics Data System (ADS)

Krukovskyi, R.; Mykhashchuk, Y.; Kost, Y.; Krukovskyi, S.; Saldan, I.

2017-04-01

Epitaxial structures based on InP are widely used to manufacture a number of devices such as microwave transistors, light-emitting diodes, lasers and Gunn diodes. However, their temporary instability caused by heterogeneity of resistivity along the layer thickness and the influence of various external or internal factors prompts the need for the development of a new reliable technology for their preparation. Weak doping by Yb, Al and Sn together with modulation of the cooling rate applied to prepare InP epitaxial layers is suggested to be adopted within the liquid phase epitaxy (LPE) method. The experimental results confirm the optimized conditions created to get a uniform electron concentration in the active n-InP layer. A sharp profile of electron concentration in the n+-InP(substrate)/n-InP/n+-InP epitaxial structure was observed experimentally at the proposed modulated cooling rate of 0.3 °С-1.5 °С min-1. The proposed technological method can be used to control the electrical and physical properties of InP epitaxial layers to be used in Gunn diodes.

Optimization of self-catalyzed InAs Nanowires on flexible graphite for photovoltaic infrared photodetectors

PubMed Central

Anyebe, Ezekiel A.; Sandall, I.; Jin, Z. M.; Sanchez, Ana M.; Rajpalke, Mohana K.; Veal, Timothy D.; Cao, Y. C.; Li, H. D.; Harvey, R.; Zhuang, Q. D.

2017-01-01

The recent discovery of flexible graphene monolayers has triggered extensive research interest for the development of III-V/graphene functional hybrid heterostructures. In order to fully exploit their enormous potential in device applications, it is essential to optimize epitaxial growth for the precise control of nanowire geometry and density. Herein, we present a comprehensive growth study of InAs nanowires on graphitic substrates by molecular beam epitaxy. Vertically well-aligned and thin InAs nanowires with high yield were obtained in a narrow growth temperature window of 420–450 °C within a restricted domain of growth rate and V/III flux ratio. The graphitic substrates enable high nanowire growth rates, which is favourable for cost-effective device fabrication. A relatively low density of defects was observed. We have also demonstrated InAs-NWs/graphite heterojunction devices exhibiting rectifying behaviour. Room temperature photovoltaic response with a cut-off wavelength of 3.4 μm was demonstrated. This elucidates a promising route towards the monolithic integration of InAs nanowires with graphite for flexible and functional hybrid devices. PMID:28393845

Continuous epitaxial growth of extremely strong Cu6Sn5 textures at liquid-Sn/(111)Cu interface under temperature gradient

NASA Astrophysics Data System (ADS)

Zhong, Y.; Zhao, N.; Liu, C. Y.; Dong, W.; Qiao, Y. Y.; Wang, Y. P.; Ma, H. T.

2017-11-01

As the diameter of solder interconnects in three-dimensional integrated circuits (3D ICs) downsizes to several microns, how to achieve a uniform microstructure with thousands of interconnects on stacking chips becomes a critical issue in 3D IC manufacturing. We report a promising way for fabricating fully intermetallic interconnects with a regular grain morphology and a strong texture feature by soldering single crystal (111) Cu/Sn/polycrystalline Cu interconnects under the temperature gradient. Continuous epitaxial growth of η-Cu6Sn5 at cold end liquid-Sn/(111)Cu interfaces has been demonstrated. The resultant η-Cu6Sn5 grains show faceted prism textures with an intersecting angle of 60° and highly preferred orientation with their ⟨ 11 2 ¯ 0 ⟩ directions nearly paralleling to the direction of the temperature gradient. These desirable textures are maintained even after soldering for 120 min. The results pave the way for controlling the morphology and orientation of interfacial intermetallics in 3D packaging technologies.

Epitaxial growth of 100-μm thick M-type hexaferrite crystals on wide bandgap semiconductor GaN/Al{sub 2}O{sub 3} substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hu, Bolin; Su, Zhijuan; Bennett, Steve

2014-05-07

Thick barium hexaferrite BaFe{sub 12}O{sub 19} (BaM) films having thicknesses of ∼100 μm were epitaxially grown on GaN/Al{sub 2}O{sub 3} substrates from a molten-salt solution by vaporizing the solvent. X-ray diffraction measurement verified the growth of BaM (001) textured growth of thick films. Saturation magnetization, 4πM{sub s}, was measured for as-grown films to be 4.6 ± 0.2 kG and ferromagnetic resonance measurements revealed a microwave linewidth of ∼100 Oe at X-band. Scanning electron microscopy indicated clear hexagonal crystals distributed on the semiconductor substrate. These results demonstrate feasibility of growing M-type hexaferrite crystal films on wide bandgap semiconductor substrates by using a simplemore » powder melting method. It also presents a potential pathway for the integration of ferrite microwave passive devices with active semiconductor circuit elements creating system-on-a-wafer architectures.« less

Preferential nucleation, guiding, and blocking of self-propelled droplets by dislocations

NASA Astrophysics Data System (ADS)

Kanjanachuchai, Songphol; Wongpinij, Thipusa; Kijamnajsuk, Suphakan; Himwas, Chalermchai; Panyakeow, Somsak; Photongkam, Pat

2018-04-01

Lattice-mismatched layers of GaAs/InGaAs are grown on GaAs(001) using molecular beam epitaxy and subsequently heated in vacuum while the surface is imaged in situ using low-energy electron microscopy, in order to study (i) the nucleation of group-III droplets formed as a result of noncongruent sublimation and (ii) the dynamics of these self-propelled droplets as they navigate the surface. It is found that the interfacial misfit dislocation network not only influences the nucleation sites of droplets, but also exerts unusual steering power over their subsequent motion. Atypical droplet flow patterns including 90° and 180° turns are found. The directions of these dislocations-guided droplets are qualitatively explained in terms of in-plane and out-of-plane stress fields associated with the buried dislocations and the driving forces due to chemical potential and stress gradients typical of Marangoni flow. The findings would benefit processes and devices that employ droplets as catalysts or active structures such as droplet epitaxy of quantum nanostructures, vapor-liquid-solid growth of nanowires, or the fabrication of self-integrated circuits.

Growth of InN on Ge substrate by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Trybus, Elaissa; Namkoong, Gon; Henderson, Walter; Doolittle, W. Alan; Liu, Rong; Mei, Jin; Ponce, Fernando; Cheung, Maurice; Chen, Fei; Furis, Madalina; Cartwright, Alexander

2005-06-01

InN epitaxial growth on a (1 1 1)-oriented, Ga-doped germanium substrate using molecular beam epitaxy is described. X-ray diffraction and transmission electron microscopy investigations have shown that the InN epitaxial layer consists of a wurtzite structure, which has the epitaxial relationship of (0 0 0 1) InN∥(1 1 1) Ge. Transmission electron microscopy shows an intermediate layer at the interface between the InN/Ge substrate. Consistent with recent reports implying a narrow bandgap of InN [Phys. Stat Sol. B 229 (2002) R1, Appl. Phys. Lett. 80 (2002) 3967], a strong photoluminescence with peak energy of 0.69 eV at 15 K was observed for this InN epilayer, in contrast to the peak energy of 0.71 eV for Ga-doped Ge under the same measurement conditions.

Strained-layer epitaxy of germanium-silicon alloys

NASA Astrophysics Data System (ADS)

Bean, J. C.

1985-10-01

Strained-layer epitaxy is presented as a developing technique for combining Si with other materials in order to obtain semiconductors with enhanced electronic properties. The method involves applying layers sufficiently thin so that the atoms deposited match the bonding configurations of the substrate crystal. When deposited on Si, a four-fold bonding pattern is retained, with a lowered interfacial energy and augmented stored strain energy in the epitaxial layer. The main problem which remains is building an epitaxial layer thick enough to yield desired epitaxial properties while avoiding a reversion to an unstrained structure. The application of a Ge layer to Si using MBE is described, along with the formation of heterojunction multi-layer superlattices, which can reduce the dislocation effects in some homojunctions. The technique shows promise for developing materials of use as bipolar transistors, optical detectors and fiber optic transmission devices.

Glass-Like Through-Plane Thermal Conductivity Induced by Oxygen Vacancies in Nanoscale Epitaxial La 0.5Sr 0.5CoO 3– δ [Glass-Like Thermal Conductivity Induced by Oxygen Vacancies in Nanoscale Epitaxial La 0.5Sr 0.5CoO 3– δ

DOE PAGES

Wu, Xuewang; Walter, Jeff; Feng, Tianli; ...

2017-11-02

Here, ultrafast time-domain thermoreflectance (TDTR) is utilized to extract the through-plane thermal conductivity (Λ LSCO) of epitaxial La 0.5Sr 0.5CoO 3–δ (LSCO) of varying thickness (<20 nm) on LaAlO 3 and SrTiO 3 substrates. These LSCO films possess ordered oxygen vacancies as the primary means of lattice mismatch accommodation with the substrate, which induces compressive/tensile strain and thus controls the orientation of the oxygen vacancy ordering (OVO). TDTR results demonstrate that the room-temperature Λ LSCO of LSCO on both substrates (1.7 W m –1 K –1) are nearly a factor of four lower than that of bulk single-crystal LSCO (6.2more » W m –1 K –1). Remarkably, this approaches the lower limit of amorphous oxides (e.g., 1.3 W m –1 K –1 for glass), with no dependence on the OVO orientation. Through theoretical simulations, origins of the glass-like thermal conductivity of LSCO are revealed as a combined effect resulting from oxygen vacancies (the dominant factor), Sr substitution, size effects, and the weak electron/phonon coupling within the LSCO film. The absence of OVO dependence in the measured Λ LSCO is rationalized by two main effects: (1) the nearly isotropic phononic thermal conductivity resulting from the imperfect OVO planes when δ is small; (2) the missing electronic contribution to Λ LSCO along the through-plane direction for these ultrathin LSCO films on insulating substrates.« less

CHEMICAL SOLUTION DEPOSITION BASED OXIDE BUFFERS AND YBCO COATED CONDUCTORS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Paranthaman, Mariappan Parans

We have reviewed briefly the growth of buffer and high temperature superconducting oxide thin films using a chemical solution deposition (CSD) method. In the Rolling-Assisted Biaxially Textured Substrates (RABiTS) process, developed at Oak Ridge National Laboratory, utilizes the thermo mechanical processing to obtain the flexible, biaxially oriented copper, nickel or nickel-alloy substrates. Buffers and Rare Earth Barium Copper Oxide (REBCO) superconductors have been deposited epitaxially on the textured nickel alloy substrates. The starting substrate serves as a template for the REBCO layer, which has substantially fewer weak links. Buffer layers play a major role in fabricating the second generation REBCOmore » wire technology. The main purpose of the buffer layers is to provide a smooth, continuous and chemically inert surface for the growth of the REBCO film, while transferring the texture from the substrate to the superconductor layer. To achieve this, the buffer layers need to be epitaxial to the substrate, i.e. they have to nucleate and grow in the same bi-axial texture provided by the textured metal foil. The most commonly used RABiTS multi-layer architectures consist of a starting template of biaxially textured Ni-5 at.% W (Ni-W) substrate with a seed (first) layer of Yttrium Oxide (Y2O3), a barrier (second) layer of Yttria Stabilized Zirconia (YSZ), and a Cerium Oxide (CeO2) cap (third) layer. These three buffer layers are generally deposited using physical vapor deposition (PVD) techniques such as reactive sputtering. On top of the PVD template, REBCO film is then grown by a chemical solution deposition. This article reviews in detail about the list of oxide buffers and superconductor REBCO films grown epitaxially on single crystal and/or biaxially textured Ni-W substrates using a CSD method.« less

Glass-Like Through-Plane Thermal Conductivity Induced by Oxygen Vacancies in Nanoscale Epitaxial La 0.5Sr 0.5CoO 3– δ [Glass-Like Thermal Conductivity Induced by Oxygen Vacancies in Nanoscale Epitaxial La 0.5Sr 0.5CoO 3– δ

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Xuewang; Walter, Jeff; Feng, Tianli

Here, ultrafast time-domain thermoreflectance (TDTR) is utilized to extract the through-plane thermal conductivity (Λ LSCO) of epitaxial La 0.5Sr 0.5CoO 3–δ (LSCO) of varying thickness (<20 nm) on LaAlO 3 and SrTiO 3 substrates. These LSCO films possess ordered oxygen vacancies as the primary means of lattice mismatch accommodation with the substrate, which induces compressive/tensile strain and thus controls the orientation of the oxygen vacancy ordering (OVO). TDTR results demonstrate that the room-temperature Λ LSCO of LSCO on both substrates (1.7 W m –1 K –1) are nearly a factor of four lower than that of bulk single-crystal LSCO (6.2more » W m –1 K –1). Remarkably, this approaches the lower limit of amorphous oxides (e.g., 1.3 W m –1 K –1 for glass), with no dependence on the OVO orientation. Through theoretical simulations, origins of the glass-like thermal conductivity of LSCO are revealed as a combined effect resulting from oxygen vacancies (the dominant factor), Sr substitution, size effects, and the weak electron/phonon coupling within the LSCO film. The absence of OVO dependence in the measured Λ LSCO is rationalized by two main effects: (1) the nearly isotropic phononic thermal conductivity resulting from the imperfect OVO planes when δ is small; (2) the missing electronic contribution to Λ LSCO along the through-plane direction for these ultrathin LSCO films on insulating substrates.« less

Epitaxial approaches to long-wavelength vertical-cavity lasers

NASA Astrophysics Data System (ADS)

Hall, Eric Michael

The success of short-wavelength (850 nm) vertical-cavity surface-emitting lasers (VCSELs) as low-cost components in fiber optic networks has created a strong demand for similar low-cost devices at longer wavelengths (1.3--1.55mum), which are even more important in telecommunications systems. Extending the success of VCSELs to these longer wavelengths, however, has been slowed by the absence of a mature technology that incorporates all of the necessary components on one substrate without sacrificing the inexpensive and manufacturable nature of VCSELs. Although InAlGaAs active regions on InP substrates have been developed extensively, the other components of vertical-cavity lasers, especially epitaxially-grown distributed Bragg reflectors (DBRs), are less mature on these substrates. This thesis examines the materials and technologies that enable long-wavelength VCSELs to be grown in a single, epitaxial, lattice-matched step on InP substrates. The advantages and shortcomings of each material system are identified and the impact on devices examined. Additionally, processing technologies that rely on the properties of these materials are developed. From these studies, a InP-based, lattice-matched VCSEL design is presented that utilizes AlGaAsSb for high reflectivity DBRs, InAlGaAs for high quality active regions, InP for heat and current spreading, and a materials selective etch for electrical and optical confinement. In short, the design avoids the shortcomings of each material system while emphasizing the advantages. The resulting devices, showing low threshold currents, high efficiencies and powers, and high operating temperatures, not only validate this approach but demonstrate that such lattice-matched, InP-based devices may be a low-cost, manufacturable answer to this long-wavelength VCSEL demand.

Scalable solution-phase epitaxial growth of symmetry-mismatched heterostructures on two-dimensional crystal soft template.

PubMed

Lin, Zhaoyang; Yin, Anxiang; Mao, Jun; Xia, Yi; Kempf, Nicholas; He, Qiyuan; Wang, Yiliu; Chen, Chih-Yen; Zhang, Yanliang; Ozolins, Vidvuds; Ren, Zhifeng; Huang, Yu; Duan, Xiangfeng

2016-10-01

Epitaxial heterostructures with precisely controlled composition and electronic modulation are of central importance for electronics, optoelectronics, thermoelectrics, and catalysis. In general, epitaxial material growth requires identical or nearly identical crystal structures with small misfit in lattice symmetry and parameters and is typically achieved by vapor-phase depositions in vacuum. We report a scalable solution-phase growth of symmetry-mismatched PbSe/Bi 2 Se 3 epitaxial heterostructures by using two-dimensional (2D) Bi 2 Se 3 nanoplates as soft templates. The dangling bond-free surface of 2D Bi 2 Se 3 nanoplates guides the growth of PbSe crystal without requiring a one-to-one match in the atomic structure, which exerts minimal restriction on the epitaxial layer. With a layered structure and weak van der Waals interlayer interaction, the interface layer in the 2D Bi 2 Se 3 nanoplates can deform to accommodate incoming layer, thus functioning as a soft template for symmetry-mismatched epitaxial growth of cubic PbSe crystal on rhombohedral Bi 2 Se 3 nanoplates. We show that a solution chemistry approach can be readily used for the synthesis of gram-scale PbSe/Bi 2 Se 3 epitaxial heterostructures, in which the square PbSe (001) layer forms on the trigonal/hexagonal (0001) plane of Bi 2 Se 3 nanoplates. We further show that the resulted PbSe/Bi 2 Se 3 heterostructures can be readily processed into bulk pellet with considerably suppressed thermal conductivity (0.30 W/m·K at room temperature) while retaining respectable electrical conductivity, together delivering a thermoelectric figure of merit ZT three times higher than that of the pristine Bi 2 Se 3 nanoplates at 575 K. Our study demonstrates a unique epitaxy mode enabled by the 2D nanocrystal soft template via an affordable and scalable solution chemistry approach. It opens up new opportunities for the creation of diverse epitaxial heterostructures with highly disparate structures and functions.

Scalable solution-phase epitaxial growth of symmetry-mismatched heterostructures on two-dimensional crystal soft template

PubMed Central

Lin, Zhaoyang; Yin, Anxiang; Mao, Jun; Xia, Yi; Kempf, Nicholas; He, Qiyuan; Wang, Yiliu; Chen, Chih-Yen; Zhang, Yanliang; Ozolins, Vidvuds; Ren, Zhifeng; Huang, Yu; Duan, Xiangfeng

2016-01-01

Epitaxial heterostructures with precisely controlled composition and electronic modulation are of central importance for electronics, optoelectronics, thermoelectrics, and catalysis. In general, epitaxial material growth requires identical or nearly identical crystal structures with small misfit in lattice symmetry and parameters and is typically achieved by vapor-phase depositions in vacuum. We report a scalable solution-phase growth of symmetry-mismatched PbSe/Bi2Se3 epitaxial heterostructures by using two-dimensional (2D) Bi2Se3 nanoplates as soft templates. The dangling bond–free surface of 2D Bi2Se3 nanoplates guides the growth of PbSe crystal without requiring a one-to-one match in the atomic structure, which exerts minimal restriction on the epitaxial layer. With a layered structure and weak van der Waals interlayer interaction, the interface layer in the 2D Bi2Se3 nanoplates can deform to accommodate incoming layer, thus functioning as a soft template for symmetry-mismatched epitaxial growth of cubic PbSe crystal on rhombohedral Bi2Se3 nanoplates. We show that a solution chemistry approach can be readily used for the synthesis of gram-scale PbSe/Bi2Se3 epitaxial heterostructures, in which the square PbSe (001) layer forms on the trigonal/hexagonal (0001) plane of Bi2Se3 nanoplates. We further show that the resulted PbSe/Bi2Se3 heterostructures can be readily processed into bulk pellet with considerably suppressed thermal conductivity (0.30 W/m·K at room temperature) while retaining respectable electrical conductivity, together delivering a thermoelectric figure of merit ZT three times higher than that of the pristine Bi2Se3 nanoplates at 575 K. Our study demonstrates a unique epitaxy mode enabled by the 2D nanocrystal soft template via an affordable and scalable solution chemistry approach. It opens up new opportunities for the creation of diverse epitaxial heterostructures with highly disparate structures and functions. PMID:27730211

GaN-on-Si blue/white LEDs: epitaxy, chip, and package

NASA Astrophysics Data System (ADS)

Qian, Sun; Wei, Yan; Meixin, Feng; Zengcheng, Li; Bo, Feng; Hanmin, Zhao; Hui, Yang

2016-04-01

The dream of epitaxially integrating III-nitride semiconductors on large diameter silicon is being fulfilled through the joint R&D efforts of academia and industry, which is driven by the great potential of GaN-on-silicon technology in improving the efficiency yet at a much reduced manufacturing cost for solid state lighting and power electronics. It is very challenging to grow high quality GaN on Si substrates because of the huge mismatch in the coefficient of thermal expansion (CTE) and the large mismatch in lattice constant between GaN and silicon, often causing a micro-crack network and a high density of threading dislocations (TDs) in the GaN film. Al-composition graded AlGaN/AlN buffer layers have been utilized to not only build up a compressive strain during the high temperature growth for compensating the tensile stress generated during the cool down, but also filter out the TDs to achieve crack-free high-quality n-GaN film on Si substrates, with an X-ray rocking curve linewidth below 300 arcsec for both (0002) and (101¯2) diffractions. Upon the GaN-on-Si templates, prior to the deposition of p-AlGaN and p-GaN layers, high quality InGaN/GaN multiple quantum wells (MQWs) are overgrown with well-engineered V-defects intentionally incorporated to shield the TDs as non-radiative recombination centers and to enhance the hole injection into the MQWs through the via-like structures. The as-grown GaN-on-Si LED wafers are processed into vertical structure thin film LED chips with a reflective p-electrode and the N-face surface roughened after the removal of the epitaxial Si(111) substrates, to enhance the light extraction efficiency. We have commercialized GaN-on-Si LEDs with an average efficacy of 150-160 lm/W for 1mm2 LED chips at an injection current of 350 mA, which have passed the 10000-h LM80 reliability test. The as-produced GaN-on-Si LEDs featured with a single-side uniform emission and a nearly Lambertian distribution can adopt the wafer-level phosphor coating procedure, and are suitable for directional lighting, camera flash, streetlighting, automotive headlamps, and otherlighting applications. Project supported financially by the National Natural Science Foundation of China (Nos. 61522407, 61534007, 61404156), the National High Technology Research and Development Program of China (No. 2015AA03A102), the Science & Technology Program of Jiangsu Province (Nos. BA2015099, BE2012063), the Suzhou Science & Technology Program (No. ZXG2013042), and the Recruitment Program of Global Experts (1000 Youth Talents Plan). Project also supported technically by Nano-X from SINANO, CAS

Low-Cost III-V Photovoltaic Materials by Chloride Vapor Transport Deposition Using Safe Solid Precursors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boettcher, Shannon; Aloni, Shaul; Weiss, Robert

Si-based photovoltaic devices dominate the market. As photovoltaic (PV) manufacturing costs have plummeted, technologies which increase efficiency have become critical. Si cell efficiencies are nearing theoretical limits and Si-based PV modules are unlikely to reach the 25-30% efficiency range. The use of III-V semiconductors is an obvious technical solution to improve efficiency, especially if they can be integrated directly with existing Si technology as tandems. High coefficients of light absorption along with tunable bandgaps and lattice constants have resulted in record conversion efficiencies for both one-sun and concentrator PV applications. GaAs, for example, has been used to manufacture single-junction photovoltaicsmore » with world-record efficiencies of 28.8% at one sun.2 However, costs for III-Vs must be dramatically reduced to produce cost-effective, high-efficiency PV solutions. III-V costs are controlled by two factors: semiconductor growth and the substrate. III-V growth is dominated today by metal-organic vapor phase epitaxy (MOVPE) with a lesser role played by molecular beam epitaxy (MBE). MOVPE costs are high due to the expense and low utilization (~30%) of precursors, modest growth rates (~100 nm min-1), equipment complexity, and safety infrastructure needed to handle toxic, pyrophoric gases.3 MBE costs are high due to slow growth rates and limitations of scalability. Details comparing plausible low-cost III-V growth methods are available in a review article published as a result of this project. The primary goal of this project was to demonstrate that close-spaced vapor transport (CSVT) using chloride (from HCl) as a transport agent can be used for the rapid growth of device-ready III-V layers from safe, solid-source precursors. In pursuit of this goal, we designed, built, and installed a new Cl-CSVT reactor based on insights from our previous H2O-CSVT growth system and in collaboration with equipment professionals at Malachite Technologies. This system was successfully used to grow epitaxial GaAs with controlled n-type doping, having mobilities similar to MOVPE. Detailed technical information and results can also be found in the primary publication resulting from this project. This work sets the stage for tackling the development of high-performance III-V single junctions and tandem devices directly on Si substrates, which was beyond the capabilities of our H2O-CSVT system. The design of the reactor’s source and substrate transfer system should allow for direct deposition of device structures. The collective innovations of our Cl-CSVT system might ultimately serve as an enabling process for commercialization of the technology through a collaboration with appropriate industrial partners.« less

Assessment of arsenic exposures and controls in gallium arsenide production.

PubMed

Sheehy, J W; Jones, J H

1993-02-01

The electronics industry is expanding the use of gallium arsenide in the production of optoelectronic devices and integrated circuits. Workers in the electronics industry using gallium arsenide are exposed to hazardous substances such as arsenic, arsine, and various acids. Arsenic requires stringent controls to minimize exposures (the current OSHA PEL for arsenic is 10 micrograms/m3 and the NIOSH REL is 2 micrograms/m3 ceiling). Inorganic arsenic is strongly implicated in respiratory tract and skin cancer. For these reasons, NIOSH researchers conducted a study of control systems for facilities using gallium arsenide. Seven walk-through surveys were performed to identify locations for detailed study which appeared to have effective controls; three facilities were chosen for in-depth evaluation. The controls were evaluated by industrial hygiene sampling. Including personal breathing zone and area air sampling for arsenic and arsine; wipe samples for arsenic also were collected. Work practices and the use of personal protective equipment were documented. This paper reports on the controls and the arsenic exposure results from the evaluation of the following gallium arsenide processes: Liquid Encapsulated Czochralski (LEC) and Horizontal Bridgeman (HB) crystal growing, LEC cleaning operations, ingot grinding/wafer sawing, and epitaxy. Results at one plant showed that in all processes except epitaxy, average arsenic exposures were at or above the OSHA action level of 5 micrograms/m3. While cleaning the LEC crystal pullers, the average potential arsenic exposure of the cleaning operators was 100 times the OSHA PEL. At the other two plants, personal exposures for arsenic were well controlled in LEC, LEC cleaning, grinding/sawing, and epitaxy operations.

Uncooled infrared photodetectors in Poland

NASA Astrophysics Data System (ADS)

Piotrowski, Jozef; Piotrowski, Adam

2005-09-01

The history and present status of the middle and long wavelength Hg1xCdxTe infrared detectors in Poland are reviewed. Research and development efforts in Poland were concentrated mostly on uncooled market niche. Technology of the infrared photodetectors has been developed by several research groups. The devices are based on mercury-based variable band gap semiconductor alloys. Modified isothermal vapor phase epitaxy (ISOVPE) has been used for many years for research and commercial fabrication of photoconductive, photoelectromagnetic and other devices. Bulk growth and liquid phase epitaxy was also used. At present, the fabrication of IR devices relies on low temperature epitaxial technique, namely metalorganic vapor phase deposition (MOCVD), frequently in combination with the ISOVPE. Photoconductive and photoelectromagnetic detectors are still in production. The devices are gradually replaced with photovoltaic devices which offer inherent advantages of no electric or magnetic bias, no heat load and no flicker noise. Potentially, the PV devices could offer high performance and very fast response. Actually, the uncooled long wavelength devices of conventional design suffer from two issues; namely low quantum efficiency and very low junction resistance. It makes them useless for practical applications. The problems have been solved with advanced 3D band gap engineered architecture, multiple cell heterojunction devices connected in series, monolithic integration of the detectors with microoptics and other improvements. Present fabrication program includes devices which are optimized for operation at any wavelength within a wide spectral range 1-15 μm and 200-300 K temperature range. Special solutions have been applied to improve speed of response. Some devices show picoseconds range response time. The devices have found numerous civilian and military applications.

Perspective: Rapid synthesis of complex oxides by combinatorial molecular beam epitaxy

DOE PAGES

A. T. Bollinger; Wu, J.; Bozovic, I.

2016-03-15

In this study, the molecular beam epitaxy(MBE) technique is well known for producing atomically smooth thin films as well as impeccable interfaces in multilayers of many different materials. In particular, molecular beam epitaxy is well suited to the growth of complex oxides, materials that hold promise for many applications. Rapid synthesis and high throughput characterization techniques are needed to tap into that potential most efficiently. We discuss our approach to doing that, leaving behind the traditional one-growth-one-compound scheme and instead implementing combinatorial oxide molecular beam epitaxy in a custom built system.

Molecular beam epitaxy and metalorganic chemical vapor deposition growth of epitaxial CdTe on (100) GaAs/Si and (111) GaAs/Si substrates

NASA Technical Reports Server (NTRS)

Nouhi, A.; Radhakrishnan, G.; Katz, J.; Koliwad, K.

1988-01-01

Epitaxial CdTe has been grown on both (100)GaAs/Si and (111)GaAs/Si substrates. A combination of molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) has been employed for the first time to achieve this growth: the GaAs layers are grown on Si substrates by MBE and the CdTe film is subsequently deposited on GaAs/Si by MOCVD. The grown layers have been characterized by X-ray diffraction, scanning electron microscopy, and photoluminescence.

A New Selective Area Lateral Epitaxy Approach for Depositing a-Plane GaN over r-Plane Sapphire

NASA Astrophysics Data System (ADS)

Chen, Changqing; Zhang, Jianping; Yang, Jinwei; Adivarahan, Vinod; Rai, Shiva; Wu, Shuai; Wang, Hongmei; Sun, Wenhong; Su, Ming; Gong, Zheng; Kuokstis, Edmundas; Gaevski, Mikhail; Khan, Muhammad Asif

2003-07-01

We report a new epitaxy procedure for growing extremely low defect density a-plane GaN films over r-plane sapphire. By combining selective area growth through a SiO2 mask opening to produce high height to width aspect ratio a-plane GaN pillars and lateral epitaxy from their c-plane facets, we obtained fully coalesced a-plane GaN films. The excellent structural, optical and electrical characteristics of these selective area lateral epitaxy (SALE) deposited films make them ideal for high efficiency III-N electronic and optoelectronic devices.

Droplet Epitaxy Image Contrast in Mirror Electron Microscopy

NASA Astrophysics Data System (ADS)

Kennedy, S. M.; Zheng, C. X.; Jesson, D. E.

2017-01-01

Image simulation methods are applied to interpret mirror electron microscopy (MEM) images obtained from a movie of GaAs droplet epitaxy. Cylindrical symmetry of structures grown by droplet epitaxy is assumed in the simulations which reproduce the main features of the experimental MEM image contrast, demonstrating that droplet epitaxy can be studied in real-time. It is therefore confirmed that an inner ring forms at the droplet contact line and an outer ring (or skirt) occurs outside the droplet periphery. We believe that MEM combined with image simulations will be increasingly used to study the formation and growth of quantum structures.

Electrical and structural properties of epitaxially deposited chromium thin films

NASA Astrophysics Data System (ADS)

Ohashi, M.; Sawabu, M.; Nakanishi, H.; Ohashi, K.; Maeta, K.

2018-05-01

We studied the electrical resistance and crystal structure of epitaxial chromium (Cr) films. The lattice constant of the Cr films was larger than that of the bulk Cr because of MgO substrate on which Cr was epitaxially deposited. A chromium oxide layer having a thickness of 1 nm was found on all films from the result of X-ray reflectivity measurements. The electrical resistivity ρ(T) shows metallic behavior for all epitaxial Cr films in contrast with polycrystalline one. However, the magnitude of ρ tends to increase and the antiferromagnetic interaction is suppressed as decreasing thickness of film.

Self-Aligned ALD AlOx T-gate Insulator for Gate Leakage Current Suppression in SiNx-Passivated AlGaN/GaN HEMTs

DTIC Science & Technology

2010-01-01

Heterostructure epitaxial material growth was performed by RF plasma-assisted molecular - beam epitaxy (MBE) on a 2-in. semi- insulating 4H SiC wafer. From... beam epitaxy of beryllium-doped GaN buffer layers for AlGaN/GaN HEMTs . J Cryst Growth 2003;251:481–6. [25] Storm DF, Katzer DS, Binari SC, Glaser ER...Shanabrook BV, Roussos JA. Reduction of buffer layer conduction near plasma-assisted molecular - beam epitaxy grown GaN/AlN interfaces by beryllium

Molecular Beam Epitaxy Integration of Magnetic Ferrites with Wide Bandgap Semiconductor 6Hydrogen-Silicon carbide for Next-generation Microwave and Spintronic Devices

NASA Astrophysics Data System (ADS)

Cai, Zhuhua

Ferrite/ferroelectric heterostructures have attracted much attention in recent years because of their unique ability to potentially enable dual magnetic and electric field tunability. The simultaneous magnetic and electric tunability in such structures can be applied in a wide range of microwave planar devices (e.g., tunable phase shifters, resonators, and delay lines) and spintronics (e.g., magnetic tunneling junctions for magnetic sensors and nonvolatile magnetic memories). However, the attempts to engineer ferrite/ferroelectric heterostructures to operate at the frequencies higher than 5 GHz are limited. Barium hexaferrite (BaM, BaFe12O19) is an ideal candidate for high frequency microwave device applications because of its strong uniaxial anisotropy (HA ˜17 kOe) and can be tuned to ferromagnetic resonance (FMR) at frequencies higher than 40 GHz with relatively small applied magnetic fields. Spinel ferrite Fe3O4 has a high Curie temperature of 858 K and is predicted to possess ˜ 100% spin polarization, which can lead to ultrahigh tunneling magnetoresistence even at room temperature. The performance of today's ferrite-based microwave communication and spintronic devices would be enhanced and next-generation monolithic microwave integrated circuit (MMIC) would be possible if ferrite/ferroelectric heterostructures can be integrated with wide band gap semiconductors (e.g., SiC or GaN), which can function in high-temperature, high-power, and high-frequency environments. The goal of this work is to use molecular beam epitaxy (MBE) to understand nucleation and film growth mechanisms needed to integrate magnetic ferrites (BaM and Fe3O4) with SiC, and subsequently understand the material chemistry and structure influences on forming functional interfaces (i.e., interfaces that enable effective ferrite/ferroelectric coupling). The study of chemistry, structure, and magnetic properties of three generations of BaM films grown by pulsed laser deposition shows a MBE-grown single crystalline MgO template promotes the c-axis alignment through formation of an oxygen bridge at the interface and minimizes the interface mixing, which enables the effective heteroepitaxy of device quality BaM on 6H-SiC. Epitaxial single crystalline BaM film with strong c-axis perpendicular alignment, high H A (16.2 kOe) and magnetization (4.1 kG) was also successfully grown by MBE for the first time on 6H-SiC. Through MBE, further study of the chemistry and structure evolution at the BaM//SiC interface suggests the 10 nm MgO template not only functions as a diffusion barrier, but also forms a spinel transition layer that is structurally similar to BaM. The high quality BaM film on SiC is compatible with MMIC and can also function as a magnetic layer in BaM/ferroelectric multiferroic heterostructures for electrostatic FMR tuning. Through MBE, single crystalline, epitaxial Fe3O4 (111) films and Fe 3O4/BaTiO3/Fe3O4 heterostructures were successfully integrated with 6H-SiC. The Fe3O4 film exhibits high strucutrual order with sharp interfaces and an easy axis in-plane magnetization with a coercivity of 200 Oe. In the Fe3O 4/BaTiO3/Fe3O4 heterostructure, the magnetoeletric coupling is demonstrated at room-temperature by an electric field induced magnetic anisotropy field change. The Fe3O4 /BaTiO3/Fe3O4 heterostructure has the potential application in multiferroic tunneling junction used in novel information storage. Understanding the ferrite growth mechanisms and interface functions through this research, is an important contribution toward the realization of a next-generation, multifunctional device.

Growth control of oxygen stoichiometry in homoepitaxial SrTiO 3 films by pulsed laser epitaxy in high vacuum

DOE PAGES

Lee, Ho Nyung; Ambrose Seo, Sung S.; Choi, Woo Seok; ...

2016-01-29

In many transition metal oxides, oxygen stoichiometry is one of the most critical parameters that plays a key role in determining the structural, physical, optical, and electrochemical properties of the material. However, controlling the growth to obtain high quality single crystal films having the right oxygen stoichiometry, especially in a high vacuum environment, has been viewed as a challenge. In this work, we show that, through proper control of the plume kinetic energy, stoichiometric crystalline films can be synthesized without generating oxygen defects even in high vacuum. We use a model homoepitaxial system of SrTiO 3 (STO) thin films onmore » single crystal STO substrates. Physical property measurements indicate that oxygen vacancy generation in high vacuum is strongly influenced by the energetics of the laser plume, and it can be controlled by proper laser beam delivery. Thus, our finding not only provides essential insight into oxygen stoichiometry control in high vacuum for understanding the fundamental properties of STO-based thin films and heterostructures, but it expands the utility of pulsed laser epitaxy of other materials as well.₃« less

Radial direct bandgap p-i-n GaNP microwire solar cells with enhanced short circuit current

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sukrittanon, Supanee; Liu, Ren; Pan, Janet L.

2016-08-07

We report the demonstration of dilute nitride heterostructure core/shell microwire solar cells utilizing the combination of top-down reactive-ion etching to create the cores (GaP) and molecular beam epitaxy to create the shells (GaNP). Systematic studies of cell performance over a series of microwire lengths, array periods, and microwire sidewall morphologies examined by transmission electron microscopy were conducted to shed light on performance-limiting factors and to optimize the cell efficiency. We show by microscopy and correlated external quantum efficiency characterization that the open circuit voltage is degraded primarily due to the presence of defects at the GaP/GaNP interface and in themore » GaNP shells, and is not limited by surface recombination. Compared to thin film solar cells in the same growth run, the microwire solar cells exhibit greater short circuit current but poorer open circuit voltage due to greater light absorption and number of defects in the microwire structure, respectively. The comprehensive understanding presented in this work suggests that performance benefits of dilute nitride microwire solar cells can be achieved by further tuning of the epitaxial quality of the underlying materials.« less

Radial direct bandgap p-i-n GaNP microwire solar cells with enhanced short circuit current

NASA Astrophysics Data System (ADS)

Sukrittanon, Supanee; Liu, Ren; Breeden, Michael C.; Pan, Janet L.; Jungjohann, K. L.; Tu, Charles W.; Dayeh, Shadi A.

2016-08-01

We report the demonstration of dilute nitride heterostructure core/shell microwire solar cells utilizing the combination of top-down reactive-ion etching to create the cores (GaP) and molecular beam epitaxy to create the shells (GaNP). Systematic studies of cell performance over a series of microwire lengths, array periods, and microwire sidewall morphologies examined by transmission electron microscopy were conducted to shed light on performance-limiting factors and to optimize the cell efficiency. We show by microscopy and correlated external quantum efficiency characterization that the open circuit voltage is degraded primarily due to the presence of defects at the GaP/GaNP interface and in the GaNP shells, and is not limited by surface recombination. Compared to thin film solar cells in the same growth run, the microwire solar cells exhibit greater short circuit current but poorer open circuit voltage due to greater light absorption and number of defects in the microwire structure, respectively. The comprehensive understanding presented in this work suggests that performance benefits of dilute nitride microwire solar cells can be achieved by further tuning of the epitaxial quality of the underlying materials.

Radial direct bandgap p-i-n GaNP microwire solar cells with enhanced short circuit current

DOE PAGES

Sukrittanon, Supanee; Liu, Ren; Breeden, Michael C.; ...

2016-08-07

Here, we report the demonstration of dilute nitride heterostructure core/shell microwire solar cells utilizing the combination of top-down reactive-ion etching to create the cores (GaP) and molecular beam epitaxy to create the shells (GaNP). Systematic studies of cell performance over a series of microwire lengths, array periods, and microwire sidewall morphologies examined by transmission electron microscopy were conducted to shed light on performance-limiting factors and to optimize the cell efficiency. We also show by microscopy and correlated external quantum efficiency characterization that the open circuit voltage is degraded primarily due to the presence of defects at the GaP/GaNP interface andmore » in the GaNP shells, and is not limited by surface recombination. Compared to thin film solar cells in the same growth run, the microwire solar cells exhibit greater short circuit current but poorer open circuit voltage due to greater light absorption and number of defects in the microwire structure, respectively. Finally, we present performance benefits of dilute nitride microwire solar cells and show that it can be achieved by further tuning of the epitaxial quality of the underlying materials.« less

Influence of MBE growth modes and conditions on spontaneous formation of metallic In nanoparticles and electrical properties of InN matrix

NASA Astrophysics Data System (ADS)

Komissarova, T. A.; Wang, P.; Paturi, P.; Wang, X.; Ivanov, S. V.

2017-11-01

Influence of the molecular beam epitaxy (MBE) growth conditions on the electrical properties of the InN epilayers in terms of minimization of the effect of spontaneously formed In nanoparticles was studied. A three-step growth sequence was used, including direct MBE growth of an InN nucleation layer, migration enhanced epitaxy (MEE) of an InN buffer layer, and In-rich MBE growth of the main InN layer, utilizing the droplet elimination by radical-beam irradiation (DERI) technique. The three-step growth regime was found to lead to decreasing the relative amount of In nanoparticles to 4.8% and 3.8% in In-rich and near-stoichiometric conditions, respectively, whereas the transport properties are better for the In-rich growth. Further reduction of the metallic indium inclusions in the InN films, while keeping simultaneously satisfactory transport parameters, is hardly possible due to fundamental processes of InN thermal decomposition and formation of the nitrogen vacancy conglomerates in the InN matrix. The In inclusions are shown to dominate the electrical conductivity of the InN films even at their minimum amount.

Photoconductive antennas based on epitaxial films In0.5Ga0.5As on GaAs (1 1 1)A and (1 0 0)A substrates with a metamorphic buffer

NASA Astrophysics Data System (ADS)

Kuznetsov, K. A.; Galiev, G. B.; Kitaeva, G. Kh; Kornienko, V. V.; Klimov, E. A.; Klochkov, A. N.; Leontyev, A. A.; Pushkarev, S. S.; Maltsev, P. P.

2018-07-01

The terahertz (THz) wave generation by the spiral photoconductive antennas fabricated on the low-temperature and high-temperature grown undoped and Si-doped In0.5Ga0.5As films is studied by the terahertz time-domain spectroscopy method. The In0.5Ga0.5As layers were grown by molecular beam epitaxy on GaAs substrates with (1 0 0) and (1 1 1)A crystallographic orientations utilizing step-graded In x Ga1‑x As metamorphic buffer. The antennas are excited by radiation of Er3+-fiber laser at 1.56 μm wavelength in two regimes: with pulse durations of 2.5 ps or 100 fs. It is found that the THz wave generation is 3–4 times more effective in the case of InGaAs-based antennas on (1 1 1)A GaAs substrates as compared to the (1 0 0) substrates. Power-voltage characteristic of the LT-InGaAs antenna up to and beyond threshold breakdown voltage are reported.

The island dynamics model on parallel quadtree grids

NASA Astrophysics Data System (ADS)

Mistani, Pouria; Guittet, Arthur; Bochkov, Daniil; Schneider, Joshua; Margetis, Dionisios; Ratsch, Christian; Gibou, Frederic

2018-05-01

We introduce an approach for simulating epitaxial growth by use of an island dynamics model on a forest of quadtree grids, and in a parallel environment. To this end, we use a parallel framework introduced in the context of the level-set method. This framework utilizes: discretizations that achieve a second-order accurate level-set method on non-graded adaptive Cartesian grids for solving the associated free boundary value problem for surface diffusion; and an established library for the partitioning of the grid. We consider the cases with: irreversible aggregation, which amounts to applying Dirichlet boundary conditions at the island boundary; and an asymmetric (Ehrlich-Schwoebel) energy barrier for attachment/detachment of atoms at the island boundary, which entails the use of a Robin boundary condition. We provide the scaling analyses performed on the Stampede supercomputer and numerical examples that illustrate the capability of our methodology to efficiently simulate different aspects of epitaxial growth. The combination of adaptivity and parallelism in our approach enables simulations that are several orders of magnitude faster than those reported in the recent literature and, thus, provides a viable framework for the systematic study of mound formation on crystal surfaces.

Epitaxially grown strained pentacene thin film on graphene membrane.

PubMed

Kim, Kwanpyo; Santos, Elton J G; Lee, Tae Hoon; Nishi, Yoshio; Bao, Zhenan

2015-05-06

Organic-graphene system has emerged as a new platform for various applications such as flexible organic photovoltaics and organic light emitting diodes. Due to its important implication in charge transport, the study and reliable control of molecular packing structures at the graphene-molecule interface are of great importance for successful incorporation of graphene in related organic devices. Here, an ideal membrane of suspended graphene as a molecular assembly template is utilized to investigate thin-film epitaxial behaviors. Using transmission electron microscopy, two distinct molecular packing structures of pentacene on graphene are found. One observed packing structure is similar to the well-known bulk-phase, which adapts a face-on molecular orientation on graphene substrate. On the other hand, a rare polymorph of pentacene crystal, which shows significant strain along the c-axis, is identified. In particular, the strained film exhibits a specific molecular orientation and a strong azimuthal correlation with underlying graphene. Through ab initio electronic structure calculations, including van der Waals interactions, the unusual polymorph is attributed to the strong graphene-pentacene interaction. The observed strained organic film growth on graphene demonstrates the possibility to tune molecular packing via graphene-molecule interactions. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Asymmetric, compressive, SiGe epilayers on Si grown by lateral liquid-phase epitaxy utilizing a distinction between dislocation nucleation and glide critical thicknesses

NASA Astrophysics Data System (ADS)

O'Reilly, Andrew J.; Quitoriano, Nathaniel

2018-01-01

Uniaxially strained Si1-xGex channels have been proposed as a solution for high mobility channels in next-generation MOSFETS to ensure continued device improvement as the benefits from further miniaturisation are diminishing. Previously proposed techniques to deposit uniaxially strained Si1-xGex epilayers on Si (0 0 1) substrates require multiple deposition steps and only yielded thin strips of uniaxially strained films. A lateral liquid-phase epitaxy (LLPE) technique was developed to deposit a blanket epilayer of asymmetrically strained Si97.4Ge2.6 on Si in a single step, where the epilayer was fully strained in the growth direction and 31% strain-relaxed in the orthogonal direction. The LLPE technique promoted the glide of misfit dislocations, which nucleated in a region with an orthogonal misfit dislocation network, into a region where the dislocation nucleation was inhibited. This created an array of parallel misfit dislocations which were the source of the asymmetric strain. By observing the thicknesses at which the dislocation network transitions from orthogonal to parallel and at which point dislocation glide is exhausted, the separate critical thicknesses for dislocation nucleation and dislocation glide can be determined.

Probing non-collinear magnetism in Ca1-xSrxMn7O12 films by neutron scattering

NASA Astrophysics Data System (ADS)

Huon, Amanda; Grutter, Alexander; Kirby, Brian; Disseler, Steven; Borchers, Julie; Liu, Yaohua; Tian, Wei; Herklotz, Andreas; Lee, Ho Nyung; Fitzsimmons, Michael; May, Steven

CaMn7O12 has been reported to be a single-phase multiferroic quadruple manganite that exhibits both ferroelectricity and helical magnetism below 90 K, but presently no experimental data from bulk or thin films have demonstrated coupling between these two ordering types. Herein, we synthesized epitaxial Ca1-xSrxMn7O12 thin films grown by oxide molecular beam epitaxy and pulsed laser deposition. We utilized neutrons to map out the non-collinear magnetic wavevectors as a function of temperature. To verify whether this coupling is present in our thin films we performed both magnetic and electric field studies. The results highlight the scientific opportunities in using chemical pressure and strain to modify non-collinear magnetism and better understand the link between ferroelectricity and helical magnetism. This material is based upon work supported by the U.S. Department of Energy, Office of Science, Office of Workforce Development for Teachers and Scientists, Office of Science Graduate Student Research (SCGSR) program. The SCGSR program is administered by the Oak Ridge Institute for Science and Education for the DOE under Contract Number DE-SC0014664.

Polytype Stability and Microstructural Characterization of Silicon Carbide Epitaxial Films Grown on [ {11}overline{{2}} {0} ]- and [0001]-Oriented Silicon Carbide Substrates

NASA Astrophysics Data System (ADS)

Bishop, S. M.; Reynolds, C. L.; Liliental-Weber, Z.; Uprety, Y.; Zhu, J.; Wang, D.; Park, M.; Molstad, J. C.; Barnhardt, D. E.; Shrivastava, A.; Sudarshan, T. S.; Davis, R. F.

2007-04-01

The polytype and surface and defect microstructure of epitaxial layers grown on 4H( {11}overline{{2}} {0} ), 4H(0001) on-axis, 4H(0001) 8° off-axis, and 6H(0001) on-axis substrates have been investigated. High-resolution x-ray diffraction (XRD) revealed the epitaxial layers on 4H( {11}overline{{2}} {0} ) and 4H(0001) 8° off-axis to have the 4H-SiC (silicon carbide) polytype, while the 3C-SiC polytype was identified for epitaxial layers on 4H(0001) and 6H(0001) on-axis substrates. Cathodoluminescence (CL), Raman spectroscopy, and transmission electron microscopy (TEM) confirmed these results. The epitaxial surface of 4H( {11}overline{{2}} {0} ) films was specular with a roughness of 0.16-nm root-mean-square (RMS), in contrast to the surfaces of the other epitaxial layer-substrate orientations, which contained curvilinear boundaries, growth pits (˜3 × 104 cm-2), triangular defects >100 μm, and significant step bunching. Molten KOH etching revealed large defect densities within 4H( {11}overline{{2}} {0} ) films that decreased with film thickness to ˜106 cm-2 at 2.5 μm, while cross-sectional TEM studies showed areas free of defects and an indistinguishable film-substrate interface for 4H( {11}overline{{2}} {0} ) epitaxial layers.

Flexible 2D Crystals of Polycyclic Aromatics Stabilized by Static Distortion Waves.

PubMed

Meissner, Matthias; Sojka, Falko; Matthes, Lars; Bechstedt, Friedhelm; Feng, Xinliang; Müllen, Klaus; Mannsfeld, Stefan C B; Forker, Roman; Fritz, Torsten

2016-07-26

The epitaxy of many organic films on inorganic substrates can be classified within the framework of rigid lattices which helps to understand the origin of energy gain driving the epitaxy of the films. Yet, there are adsorbate-substrate combinations with distinct mutual orientations for which this classification fails and epitaxy cannot be explained within a rigid lattice concept. It has been proposed that tiny shifts in atomic positions away from ideal lattice points, so-called static distortion waves (SDWs), are responsible for the observed orientational epitaxy in such cases. Using low-energy electron diffraction and scanning tunneling microscopy, we provide direct experimental evidence for SDWs in organic adsorbate films, namely hexa-peri-hexabenzocoronene on graphite. They manifest as wave-like sub-Ångström molecular displacements away from an ideal adsorbate lattice which is incommensurate with graphite. By means of a density-functional-theory based model, we show that, due to the flexibility in the adsorbate layer, molecule-substrate energy is gained by straining the intermolecular bonds and that the resulting total energy is minimal for the observed domain orientation, constituting the orientational epitaxy. While structural relaxation at an interface is a common assumption, the combination of the precise determination of the incommensurate epitaxial relation, the direct observation of SDWs in real space, and their identification as the sole source of epitaxial energy gain constitutes a comprehensive proof of this effect.

Naturally formed ultrathin V2O5 heteroepitaxial layer on VO2/sapphire(001) film

NASA Astrophysics Data System (ADS)

Littlejohn, Aaron J.; Yang, Yunbo; Lu, Zonghuan; Shin, Eunsung; Pan, KuanChang; Subramanyam, Guru; Vasilyev, Vladimir; Leedy, Kevin; Quach, Tony; Lu, Toh-Ming; Wang, Gwo-Ching

2017-10-01

Vanadium dioxide (VO2) and vanadium pentoxide (V2O5) thin films change their properties in response to external stimuli such as photons, temperature, electric field and magnetic field and have applications in electronics, optical devices, and sensors. Due to the multiple valence states of V and non-stoichiometry in thin films, it is challenging to grow epitaxial, single-phase V-oxide on a substrate, or a heterostructure of two epitaxial V-oxides. We report the formation of a heterostructure consisting of a few nm thick ultrathin V2O5 epitaxial layer on pulsed laser deposited tens of nm thick epitaxial VO2 thin films grown on single crystal Al2O3(001) substrates without post annealing of the VO2 film. The simultaneous observation of the ultrathin epitaxial V2O5 layer and VO2 epitaxial film is only possible by our unique reflection high energy electron diffraction pole figure analysis. The out-of-plane and in-plane epitaxial relationships are V2O5[100]||VO2[010]||Al2O3[001] and V2O5[03 2 bar ]||VO2[100]||Al2O3[1 1 bar 0], respectively. The existence of the V2O5 layer on the surface of the VO2 film is also supported by X-ray photoelectron spectroscopy and Raman spectroscopy.

Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing.

PubMed

Shih, Huan-Yu; Lee, Wei-Hao; Kao, Wei-Chung; Chuang, Yung-Chuan; Lin, Ray-Ming; Lin, Hsin-Chih; Shiojiri, Makoto; Chen, Miin-Jang

2017-01-03

Low-temperature epitaxial growth of AlN ultrathin films was realized by atomic layer deposition (ALD) together with the layer-by-layer, in-situ atomic layer annealing (ALA), instead of a high growth temperature which is needed in conventional epitaxial growth techniques. By applying the ALA with the Ar plasma treatment in each ALD cycle, the AlN thin film was converted dramatically from the amorphous phase to a single-crystalline epitaxial layer, at a low deposition temperature of 300 °C. The energy transferred from plasma not only provides the crystallization energy but also enhances the migration of adatoms and the removal of ligands, which significantly improve the crystallinity of the epitaxial layer. The X-ray diffraction reveals that the full width at half-maximum of the AlN (0002) rocking curve is only 144 arcsec in the AlN ultrathin epilayer with a thickness of only a few tens of nm. The high-resolution transmission electron microscopy also indicates the high-quality single-crystal hexagonal phase of the AlN epitaxial layer on the sapphire substrate. The result opens a window for further extension of the ALD applications from amorphous thin films to the high-quality low-temperature atomic layer epitaxy, which can be exploited in a variety of fields and applications in the near future.

Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing

PubMed Central

Shih, Huan-Yu; Lee, Wei-Hao; Kao, Wei-Chung; Chuang, Yung-Chuan; Lin, Ray-Ming; Lin, Hsin-Chih; Shiojiri, Makoto; Chen, Miin-Jang

2017-01-01

Low-temperature epitaxial growth of AlN ultrathin films was realized by atomic layer deposition (ALD) together with the layer-by-layer, in-situ atomic layer annealing (ALA), instead of a high growth temperature which is needed in conventional epitaxial growth techniques. By applying the ALA with the Ar plasma treatment in each ALD cycle, the AlN thin film was converted dramatically from the amorphous phase to a single-crystalline epitaxial layer, at a low deposition temperature of 300 °C. The energy transferred from plasma not only provides the crystallization energy but also enhances the migration of adatoms and the removal of ligands, which significantly improve the crystallinity of the epitaxial layer. The X-ray diffraction reveals that the full width at half-maximum of the AlN (0002) rocking curve is only 144 arcsec in the AlN ultrathin epilayer with a thickness of only a few tens of nm. The high-resolution transmission electron microscopy also indicates the high-quality single-crystal hexagonal phase of the AlN epitaxial layer on the sapphire substrate. The result opens a window for further extension of the ALD applications from amorphous thin films to the high-quality low-temperature atomic layer epitaxy, which can be exploited in a variety of fields and applications in the near future. PMID:28045075

Flexible 2D Crystals of Polycyclic Aromatics Stabilized by Static Distortion Waves

PubMed Central

2016-01-01

The epitaxy of many organic films on inorganic substrates can be classified within the framework of rigid lattices which helps to understand the origin of energy gain driving the epitaxy of the films. Yet, there are adsorbate–substrate combinations with distinct mutual orientations for which this classification fails and epitaxy cannot be explained within a rigid lattice concept. It has been proposed that tiny shifts in atomic positions away from ideal lattice points, so-called static distortion waves (SDWs), are responsible for the observed orientational epitaxy in such cases. Using low-energy electron diffraction and scanning tunneling microscopy, we provide direct experimental evidence for SDWs in organic adsorbate films, namely hexa-peri-hexabenzocoronene on graphite. They manifest as wave-like sub-Ångström molecular displacements away from an ideal adsorbate lattice which is incommensurate with graphite. By means of a density-functional-theory based model, we show that, due to the flexibility in the adsorbate layer, molecule–substrate energy is gained by straining the intermolecular bonds and that the resulting total energy is minimal for the observed domain orientation, constituting the orientational epitaxy. While structural relaxation at an interface is a common assumption, the combination of the precise determination of the incommensurate epitaxial relation, the direct observation of SDWs in real space, and their identification as the sole source of epitaxial energy gain constitutes a comprehensive proof of this effect. PMID:27014920

Epitaxial ternary nitride thin films prepared by a chemical solution method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Luo, Hongmei; Feldmann, David M; Wang, Haiyan

2008-01-01

It is indispensable to use thin films for many technological applications. This is the first report of epitaxial growth of ternary nitride AMN2 films. Epitaxial tetragonal SrTiN2 films have been successfully prepared by a chemical solution approach, polymer-assisted deposition. The structural, electrical, and optical properties of the films are also investigated.

Three-dimensional mesoscale heterostructures of ZnO nanowire arrays epitaxially grown on CuGaO2 nanoplates as individual diodes.

PubMed

Forticaux, Audrey; Hacialioglu, Salih; DeGrave, John P; Dziedzic, Rafal; Jin, Song

2013-09-24

We report a three-dimensional (3D) mesoscale heterostructure composed of one-dimensional (1D) nanowire (NW) arrays epitaxially grown on two-dimensional (2D) nanoplates. Specifically, three facile syntheses are developed to assemble vertical ZnO NWs on CuGaO2 (CGO) nanoplates in mild aqueous solution conditions. The key to the successful 3D mesoscale integration is the preferential nucleation and heteroepitaxial growth of ZnO NWs on the CGO nanoplates. Using transmission electron microscopy, heteroepitaxy was found between the basal planes of CGO nanoplates and ZnO NWs, which are their respective (001) crystallographic planes, by the observation of a hexagonal Moiré fringes pattern resulting from the slight mismatch between the c planes of ZnO and CGO. Careful analysis shows that this pattern can be described by a hexagonal supercell with a lattice parameter of almost exactly 11 and 12 times the a lattice constants for ZnO and CGO, respectively. The electrical properties of the individual CGO-ZnO mesoscale heterostructures were measured using a current-sensing atomic force microscopy setup to confirm the rectifying p-n diode behavior expected from the band alignment of p-type CGO and n-type ZnO wide band gap semiconductors. These 3D mesoscale heterostructures represent a new motif in nanoassembly for the integration of nanomaterials into functional devices with potential applications in electronics, photonics, and energy.

Monolithic Integrated Radiation Sensor Using Stimulated Luminescence From Alumina

NASA Technical Reports Server (NTRS)

McKeever, S. W. S.; Yukihara, E. G.; Stoebe, T. G.; Chen, T.-C.

2005-01-01

The project goal was to design and test a monolithic integrated device for radiation sensing, using optically stimulated luminescence (OSL) from Al2O3:C. The device would consist of GaN/InGaN-based components epitaxially grown on each side of a A12O3:C substrate. Radiation energy stored in the substrate would be stimulated by visible emission from a GaN light-emitting diode (LED) grown on one side of the device, and the OSL emission from the substrate (in the blue region of the spectrum) would be detected by the InGaN pi-n diode grown on the other side of the substrate. The primary application of the device would be in space radiation environments. Thus, two major research thrusts were launched during this project. Firstly, research at Oklahoma State University (Dr. Stephen W.S. McKeever and Dr. E.G. Yukihara) concentrated on characterization of the OSL properties of Al2O3:C in radiation fields typical of those experienced in low-Earth orbit. Secondly, research at the University of Washington (Co-Is, Dr. T.G. Stoebe and Dr. T. Chen) focused of device development and GaN/InGaN epitaxial growth. While progress in each line of research has been substantial, the ultimate goal (that of producing a working prototype device) has not yet been reached. We detail the research progress and identify outstanding issues in this paper.

Highly efficient pseudomorphic InGaAs/GaAs/AlGaAs single quantum well lasers for monolithic integration

NASA Technical Reports Server (NTRS)

Larsson, A.; Cody, J.; Forouhar, S.; Lang, R. J.

1990-01-01

Highly efficient ridge waveguide pseudomorphic single quantum well lasers, emitting at 980 nm, have been fabricated from an In(0.2)Ga(0.8)As/GaAs/AlGaAs graded-index separate confinement heterostructure grown by molecular beam epitaxy. The laterial index guiding provided by the ridge reduces the anomalously large lateral loss of optical power found in gain-guided structures, thereby reducing the internal loss by more than 50 percent. The low threshold current (7.6 mA) and high differential quantum efficiency (79 percent) obtained under continuous operation as well as the transparency of the GaAs substrate to the emitted radiation render these lasers attractive for Ga-As-based optoelectronic integration.

David Adler Lectureship Award Talk: III-V Semiconductor Nanowires on Silicon for Future Devices

NASA Astrophysics Data System (ADS)

Riel, Heike

Bottom-up grown nanowires are very attractive materials for direct integration of III-V semiconductors on silicon thus opening up new possibilities for the design and fabrication of nanoscale devices for electronic, optoelectronic as well as quantum information applications. Template-Assisted Selective Epitaxy (TASE) allows the well-defined and monolithic integration of complex III-V nanostructures and devices on silicon. Achieving atomically abrupt heterointerfaces, high crystal quality and control of dimension down to 1D nanowires enabled the demonstration of FETs and tunnel devices based on In(Ga)As and GaSb. Furthermore, the strong influence of strain on nanowires as well as results on quantum transport studies of InAs nanowires with well-defined geometry will be presented.

New insights on SOI Tunnel FETs with low-temperature process flow for CoolCube™ integration

NASA Astrophysics Data System (ADS)

Diaz Llorente, C.; Le Royer, C.; Batude, P.; Fenouillet-Beranger, C.; Martinie, S.; Lu, C.-M. V.; Allain, F.; Colinge, J.-P.; Cristoloveanu, S.; Ghibaudo, G.; Vinet, M.

2018-06-01

This paper reports the fabrication and electrical characterization of planar SOI Tunnel FETs (TFETs) made using a Low-Temperature (LT) process designed for 3D sequential integration. These proof-of-concept TFETs feature junctions obtained by Solid Phase Epitaxy Regrowth (SPER). Their electrical behavior is analyzed and compared to reference samples (regular process using High-Temperature junction formation, HT). Dual ID-VDS measurements verify that the TFET structures present Band-to-Band tunnelling (BTBT) carrier injection and not Schottky Barrier tunnelling. P-mode operating LT TFETs deliver an ON state current similar to that of the HT reference, opening the door towards optimized devices operating with very low threshold voltage VTH and low supply voltage VDD.

Advanced 3-V semiconductor technology assessment

NASA Technical Reports Server (NTRS)

Nowogrodzki, M.

1983-01-01

Components required for extensions of currently planned space communications systems are discussed for large antennas, crosslink systems, single sideband systems, Aerostat systems, and digital signal processing. Systems using advanced modulation concepts and new concepts in communications satellites are included. The current status and trends in materials technology are examined with emphasis on bulk growth of semi-insulating GaAs and InP, epitaxial growth, and ion implantation. Microwave solid state discrete active devices, multigigabit rate GaAs digital integrated circuits, microwave integrated circuits, and the exploratory development of GaInAs devices, heterojunction devices, and quasi-ballistic devices is considered. Competing technologies such as RF power generation, filter structures, and microwave circuit fabrication are discussed. The fundamental limits of semiconductor devices and problems in implementation are explored.

Emission and detection of surface acoustic waves by AlGaN/GaN high electron mobility transistors

NASA Astrophysics Data System (ADS)

Shao, Lei; Zhang, Meng; Banerjee, Animesh; Bhattacharya, Pallab; Pipe, Kevin P.

2011-12-01

Using integrated interdigital transducers (IDTs), we demonstrate the emission of surface acoustic waves (SAWs) by AlGaN/GaN high electron mobility transistors (HEMTs) under certain bias conditions through dynamic screening of the HEMTs vertical field by modulation of its two-dimensional electron gas. We show that a strong SAW signal can be detected if the IDT geometry replicates the HEMT electrode geometry at which RF bias is applied. In addition to characterizing SAW emission during both gate-source and drain-source modulation, we demonstrate SAW detection by HEMTs. Integrated HEMT-IDT structures could enable real-time evaluation of epitaxial degradation as well as high-speed, amplified detection of SAWs.

Growth of strontium ruthenate films by hybrid molecular beam epitaxy

DOE PAGES

Marshall, Patrick B.; Kim, Honggyu; Ahadi, Kaveh; ...

2017-09-01

We report on the growth of epitaxial Sr 2RuO 4 films using a hybrid molecular beam epitaxy approach in which a volatile precursor containing RuO 4 is used to supply ruthenium and oxygen. The use of the precursor overcomes a number of issues encountered in traditional molecular beam epitaxy that uses elemental metal sources. Phase-pure, epitaxial thin films of Sr 2RuO 4 are obtained. At high substrate temperatures, growth proceeds in a layer-by-layer mode with intensity oscillations observed in reflection high-energy electron diffraction. Films are of high structural quality, as documented by x-ray diffraction, atomic force microscopy, and transmission electronmore » microscopy. In conclusion, the method should be suitable for the growth of other complex oxides containing ruthenium, opening up opportunities to investigate thin films that host rich exotic ground states.« less

Ultrathin IBAD MgO films for epitaxial growth on amorphous substrates and sub-50 nm membranes

DOE PAGES

Wang, Siming; Antonakos, C.; Bordel, C.; ...

2016-11-07

Here, a fabrication process has been developed for high energy ion beam assisted deposition (IBAD) biaxial texturing of ultrathin (~1 nm) MgO films, using a high ion-to-atom ratio and post-deposition annealing instead of a homoepitaxial MgO layer. These films serve as the seed layer for epitaxial growth of materials on amorphous substrates such as electron/X-ray transparent membranes or nanocalorimetry devices. Stress measurements and atomic force microscopy of the MgO films reveal decreased stress and surface roughness, while X-ray diffraction of epitaxial overlayers demonstrates the improved crystal quality of films grown epitaxially on IBAD MgO. The process simplifies the synthesis ofmore » IBAD MgO, fundamentally solves the “wrinkle” issue induced by the homoepitaxial layer on sub-50 nm membranes, and enables studies of epitaxial materials in electron/X-ray transmission and nanocalorimetry.« less

Effect of the nand p-type Si(100) substrates with a SiC buffer layer on the growth mechanism and structure of epitaxial layers of semipolar AlN and GaN

NASA Astrophysics Data System (ADS)

Bessolov, V. N.; Grashchenko, A. S.; Konenkova, E. V.; Myasoedov, A. V.; Osipov, A. V.; Red'kov, A. V.; Rodin, S. N.; Rubets, V. P.; Kukushkin, S. A.

2015-10-01

A new effect of the n-and p-type doping of the Si(100) substrate with a SiC film on the growth mechanism and structure of AlN and GaN epitaxial layers has been revealed. It has been experimentally shown that the mechanism of AlN and GaN layer growth on the surface of a SiC layer synthesized by substituting atoms on n- and p-Si substrates is fundamentally different. It has been found that semipolar AlN and GaN layers on the SiC/Si(100) surface grow in the epitaxial and polycrystalline structures on p-Si and n-Si substrates, respectively. A new method for synthesizing epitaxial semipolar AlN and GaN layers by chloride-hydride epitaxy on silicon substrates has been proposed.

InGaAsP-based uni-travelling carrier photodiode structure grown by solid source molecular beam epitaxy.

PubMed

Natrella, Michele; Rouvalis, Efthymios; Liu, Chin-Pang; Liu, Huiyun; Renaud, Cyril C; Seeds, Alwyn J

2012-08-13

We report the first InGaAsP-based uni-travelling carrier photodiode structure grown by Solid Source Molecular Beam Epitaxy; the material contains layers of InGaAsP as thick as 300 nm and a 120 nm thick InGaAs absorber. Large area vertically illuminated test devices have been fabricated and characterised; the devices exhibited 0.1 A/W responsivity at 1550 nm, 12.5 GHz -3 dB bandwidth and -5.8 dBm output power at 10 GHz for a photocurrent of 4.8 mA. The use of Solid Source Molecular Beam Epitaxy enables the major issue associated with the unintentional diffusion of zinc in Metal Organic Vapour Phase Epitaxy to be overcome and gives the benefit of the superior control provided by MBE growth techniques without the costs and the risks of handling toxic gases of Gas Source Molecular Beam Epitaxy.

Epitaxial Graphene: A New Material for Electronics

NASA Astrophysics Data System (ADS)

de Heer, Walt A.

2007-10-01

Graphene multilayers are grown epitaxially on single crystal silicon carbide. This system is composed of several graphene layers of which the first layer is electron doped due to the built-in electric field and the other layers are essentially undoped. Unlike graphite the charge carriers show Dirac particle properties (i.e. an anomalous Berry's phase, weak anti-localization and square root field dependence of the Landau level energies). Epitaxial graphene shows quasi-ballistic transport and long coherence lengths; properties that may persists above cryogenic temperatures. Paradoxically, in contrast to exfoliated graphene, the quantum Hall effect is not observed in high mobility epitaxial graphene. It appears that the effect is suppressed due to absence of localized states in the bulk of the material. Epitaxial graphene can be patterned using standard lithography methods and characterized using a wide array of techniques. These favorable features indicate that interconnected room temperature ballistic devices may be feasible for low dissipation high-speed nano-electronics.

Epitaxial graphene

NASA Astrophysics Data System (ADS)

de Heer, Walt A.; Berger, Claire; Wu, Xiaosong; First, Phillip N.; Conrad, Edward H.; Li, Xuebin; Li, Tianbo; Sprinkle, Michael; Hass, Joanna; Sadowski, Marcin L.; Potemski, Marek; Martinez, Gérard

2007-07-01

Graphene multilayers are grown epitaxially on single crystal silicon carbide. This system is composed of several graphene layers of which the first layer is electron doped due to the built-in electric field and the other layers are essentially undoped. Unlike graphite the charge carriers show Dirac particle properties (i.e. an anomalous Berry's phase, weak anti-localization and square root field dependence of the Landau level energies). Epitaxial graphene shows quasi-ballistic transport and long coherence lengths; properties that may persist above cryogenic temperatures. Paradoxically, in contrast to exfoliated graphene, the quantum Hall effect is not observed in high-mobility epitaxial graphene. It appears that the effect is suppressed due to the absence of localized states in the bulk of the material. Epitaxial graphene can be patterned using standard lithography methods and characterized using a wide array of techniques. These favorable features indicate that interconnected room temperature ballistic devices may be feasible for low-dissipation high-speed nanoelectronics.

Liquid-Phase Epitaxial Growth of ZnS, ZnSe and Their Mixed Compounds Using Te as Solvent

NASA Astrophysics Data System (ADS)

Nakamura, Hiroshi; Aoki, Masaharu

1981-01-01

Epitaxial layers of ZnS, ZnSe and their mixed compounds were grown on ZnS substrates by the liquid-phase epitaxial growth (LPE) method using Te as the solvent. The open-tube slide-boat technique was used, and a suitable starting temperature for growth was found to be 850°C for ZnS and 700-800°C for ZnSe. The ZnS epitaxial layers grown on {111}A and {111}B oriented ZnS substrates were thin (˜1 μm) and smooth, had low, uniform Te concentrations (˜0.1 at.%) and were highly luminescent. The ZnSe epitaxial layers were relatively thick (10-30 μm) and had fairly high Te concentrations (a few at.%). Various mixed compound ZnS1-xSex were also grown on ZnS substrates.

Effect of Elastic Strain Fluctuation on Atomic Layer Growth of Epitaxial Silicide in Si Nanowires by Point Contact Reactions.

PubMed

Chou, Yi-Chia; Tang, Wei; Chiou, Chien-Jyun; Chen, Kai; Minor, Andrew M; Tu, K N

2015-06-10

Effects of strain impact a range of applications involving mobility change in field-effect-transistors. We report the effect of strain fluctuation on epitaxial growth of NiSi2 in a Si nanowire via point contact and atomic layer reactions, and we discuss the thermodynamic, kinetic, and mechanical implications. The generation and relaxation of strain shown by in situ TEM is periodic and in synchronization with the atomic layer reaction. The Si lattice at the epitaxial interface is under tensile strain, which enables a high solubility of supersaturated interstitial Ni atoms for homogeneous nucleation of an epitaxial atomic layer of the disilicide phase. The tensile strain is reduced locally during the incubation period of nucleation by the dissolution of supersaturated Ni atoms in the Si lattice but the strained-Si state returns once the atomic layer epitaxial growth of NiSi2 occurs by consuming the supersaturated Ni.

Epitaxial nickel disilicide with low resistivity and excellent reliability.

PubMed

Hsin, Cheng-Lun; Deng, Shiu-Sheng

2016-02-12

Ultra-thin epitaxial NiSi2 was formed, and its structure was examined by electron microscopy and x-ray diffraction. Compared with previous reports, the measured resistivity of the epitaxial NiSi2 was unprecedentedly low, reaching 7 μΩ cm in the experimental results and up to 14.93 μΩ cm after modification. The reliability, which was investigated under different temperatures and current densities to understand its electronic characteristics, was 1.5 times better than that of the conventional polycrystalline counterpart. Black's equation and the measured mean-time-to-failure (MTTF) were used to obtain the reliability characteristics of epitaxial and poly-NiSi2. Confidence intervals at 95% for each MTTF confirmed the single failure mode. The electromigration phenomenon was observed to be the failure mechanism. Our results provide evidence that epitaxial NiSi2 is a promising contact material for future electronics.

Epitaxial nickel disilicide with low resistivity and excellent reliability

NASA Astrophysics Data System (ADS)

Hsin, Cheng-Lun; Deng, Shiu-Sheng

2016-02-01

Ultra-thin epitaxial NiSi2 was formed, and its structure was examined by electron microscopy and x-ray diffraction. Compared with previous reports, the measured resistivity of the epitaxial NiSi2 was unprecedentedly low, reaching 7 μΩ cm in the experimental results and up to 14.93 μΩ cm after modification. The reliability, which was investigated under different temperatures and current densities to understand its electronic characteristics, was 1.5 times better than that of the conventional polycrystalline counterpart. Black’s equation and the measured mean-time-to-failure (MTTF) were used to obtain the reliability characteristics of epitaxial and poly-NiSi2. Confidence intervals at 95% for each MTTF confirmed the single failure mode. The electromigration phenomenon was observed to be the failure mechanism. Our results provide evidence that epitaxial NiSi2 is a promising contact material for future electronics.

Low temperature laser molecular beam epitaxy and characterization of AlGaN epitaxial layers

NASA Astrophysics Data System (ADS)

Tyagi, Prashant; Ch., Ramesh; Kushvaha, S. S.; Kumar, M. Senthil

2017-05-01

We have grown AlGaN (0001) epitaxial layers on sapphire (0001) by using laser molecular beam epitaxy (LMBE) technique. The growth was carried out using laser ablation of AlxGa1-x liquid metal alloy under r.f. nitrogen plasma ambient. Before epilayer growth, the sapphire nitradation was performed at 700 °C using r.f nitrogen plasma followed by AlGaN layer growth. The in-situ reflection high energy electron diffraction (RHEED) was employed to monitor the substrate nitridation and AlGaN epitaxial growth. High resolution x-ray diffraction showed wurtzite hexagonal growth of AlGaN layer along c-axis. An absorption bandgap of 3.97 eV is obtained for the grown AlGaN layer indicating an Al composition of more than 20 %. Using ellipsometry, a refractive index (n) value of about 2.19 is obtained in the visible region.

Functional Epitaxial Oxide Devices

DTIC Science & Technology

2010-04-12

complex oxides , epitaxial growth, antennas, varactors 16. SECURITY CLASSIFICATION OF: REPORT U b. ABSTRACT u c. THIS PAGE u 17. LIMITATION OF...Technical Report DATES COVERED (From - To) 17-06-2008-31-12-2009 4. TITLE AND SUBTITLE Functional Epitaxial Oxide Devices 5a. CONTRACT NUMBER NA...This research effort addresses the need for high performance radio frequency (RF) components, specifically varactors and miniaturized, high gain

Spin Polarization of Alternate Monatomic Epitaxial [Fe/Co]n Superlattice

NASA Astrophysics Data System (ADS)

Chu, In Chang; Doi, Masaaki; Sahashi, Masashi; Rajanikanth, Ammanabrolu; Takahashi, Yukiko; Hono, Kazuhiro

2012-09-01

The spin polarization (P) of alternate monatomic layered (AML) epitaxial [Fe/Co]n superlattices grown on MgO(001) substrates by electron beam (EB) evaporation has been measured by the point contact Andreev reflection (PCAR) method. The intrinsic transport P of 0.60 was obtained for the AML epitaxial [Fe/Co]n superlattice grown at 75 °C, which is comparable to that of half-metallic Heusler alloys measured by PCAR. The AML epitaxial [Fe/Co]n superlattices on MgO(001), which are expected to possess the B2 ordered structure, show the highest spin polarization of metallic Fe-Co alloy films.

Epitaxial-graphene/graphene-oxide junction: an essential step towards epitaxial graphene electronics.

PubMed

Wu, Xiaosong; Sprinkle, Mike; Li, Xuebin; Ming, Fan; Berger, Claire; de Heer, Walt A

2008-07-11

Graphene-oxide (GO) flakes have been deposited to bridge the gap between two epitaxial-graphene electrodes to produce all-graphene devices. Electrical measurements indicate the presence of Schottky barriers at the graphene/graphene-oxide junctions, as a consequence of the band gap in GO. The barrier height is found to be about 0.7 eV, and is reduced after annealing at 180 degrees C, implying that the gap can be tuned by changing the degree of oxidation. A lower limit of the GO mobility was found to be 850 cm2/V s, rivaling silicon. In situ local oxidation of patterned epitaxial graphene has been achieved.

Site-Competition Epitaxy for N-Type and P-Type Dopant Control in CVD Sic Epilayers

NASA Technical Reports Server (NTRS)

Larkin, D. J.

1995-01-01

The use of site-competition epitaxy, which is based on intentional variation of the Si/C ratio during epitaxy, has now been reproduced in numerous national and international laboratories. However, previous reports have only considered dopant incorporation control for epitaxy on the Si-face 6H-SiC(OOO1) substrates. Presented in this paper is the extension of this technique for control of phosphorous incorporation and also a comparison of controlled doping on C-face 6H-SiC(OOO1) versus Si-face 6H-SiC(OOO1) substrates for aluminum, boron, nitrogen, and phosphorous.

Outdiffusion of recombination centers from the substrate into LPE layers - GaAs

NASA Technical Reports Server (NTRS)

Jastrzebski, L.; Lagowski, J.; Gatos, H. C.

1979-01-01

Experimental results are presented showing that outdiffusion of recombination centers from the GaAs substrate into the epitaxial layer takes place during growth. Such outdiffusion decreases the carrier lifetime in the epitaxial layer to much lower values than the radiative recombination limit. Furthermore, it introduces a lifetime gradient across the epitaxial layer which depends critically on the growth velocity and thermal treatment. High rates of growth (such as those attainable in electroepitaxy) and high cooling rates can minimize the adverse effects of normally available substrates on the epitaxial layers; however, good quality substrates are essential for the consistent growth of device quality layers.

Electromigration in epitaxial Cu(001) lines

NASA Astrophysics Data System (ADS)

Ramanath, G.; Kim, H.; Goindi, H. S.; Frederick, M. J.; Shin, C.-S.; Goswami, R.; Petrov, I.; Greene, J. E.

2002-04-01

We report the electromigration (EM) response of single-domain epitaxial Cu(001) lines on layers of Ta, TaN, and TiN. Epitaxial Cu(001) lines on nitride layers exhibit nearly two orders of magnitude higher mean-time-to-failure (MTTF) values than those on Ta, indicating the strong influence of the underlayer. The activation energy of EM for Cu on the nitrides is ˜0.8-1.2 eV, and that of Cu on Ta is ˜0.2 eV, for 200-300 °C. Our results also indicate that the MTTF values correlate inversely to the crystal quality of the Cu layers measured by X-ray diffraction. The EM resistance of epitaxial Cu lines with different crystal quality on TaN were measured to separate the effects of interface chemistry and crystal quality. While higher quality epitaxial films reveal a higher EM resistance, the magnitude of the change is smaller than that obtained by changing the interface chemistry. Epitaxial lines exhibit more than 3-4 orders of magnitude higher MTTF than polycrystalline lines on the same underlayer. Based upon our results, we propose that the Cu/underlayer interface chemistry and presence of grain boundary diffusion play important roles in unpassivated Cu films.

1.55 μm room-temperature lasing from subwavelength quantum-dot microdisks directly grown on (001) Si

NASA Astrophysics Data System (ADS)

Shi, Bei; Zhu, Si; Li, Qiang; Tang, Chak Wah; Wan, Yating; Hu, Evelyn L.; Lau, Kei May

2017-03-01

Miniaturized laser sources can benefit a wide variety of applications ranging from on-chip optical communications and data processing, to biological sensing. There is a tremendous interest in integrating these lasers with rapidly advancing silicon photonics, aiming to provide the combined strength of the optoelectronic integrated circuits and existing large-volume, low-cost silicon-based manufacturing foundries. Using III-V quantum dots as the active medium has been proven to lower power consumption and improve device temperature stability. Here, we demonstrate room-temperature InAs/InAlGaAs quantum-dot subwavelength microdisk lasers epitaxially grown on (001) Si, with a lasing wavelength of 1563 nm, an ultralow-threshold of 2.73 μW, and lasing up to 60 °C under pulsed optical pumping. This result unambiguously offers a promising path towards large-scale integration of cost-effective and energy-efficient silicon-based long-wavelength lasers.

Monolithic photonic integrated circuit with a GaN-based bent waveguide

NASA Astrophysics Data System (ADS)

Cai, Wei; Qin, Chuan; Zhang, Shuai; Yuan, Jialei; Zhang, Fenghua; Wang, Yongjin

2018-06-01

Integration of a transmitter, waveguide and receiver into a single chip can generate a multicomponent system with multiple functionalities. Here, we fabricate and characterize a GaN-based photonic integrated circuit (PIC) on a GaN-on-silicon platform. With removal of the silicon and back wafer thinning of the epitaxial film, ultrathin membrane-type devices and highly confined suspended GaN waveguides were formed. Two suspended-membrane InGaN/GaN multiple-quantum-well diodes (MQW-diodes) served as an MQW light-emitting diode (MQW-LED) to emit light and an MQW photodiode (MQW-PD) to sense light. The optical interconnects between the MQW-LED and MQW-PD were achieved using the GaN bent waveguide. The GaN-based PIC consisting of an MQW-LED, waveguides and an MQW-PD forms an in-plane light communication system with a data transmission rate of 70 Mbps.

Metal-interconnection-free integration of InGaN/GaN light emitting diodes with AlGaN/GaN high electron mobility transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Chao; Cai, Yuefei; Liu, Zhaojun

2015-05-04

We report a metal-interconnection-free integration scheme for InGaN/GaN light emitting diodes (LEDs) and AlGaN/GaN high electron mobility transistors (HEMTs) by combining selective epi removal (SER) and selective epitaxial growth (SEG) techniques. SER of HEMT epi was carried out first to expose the bottom unintentionally doped GaN buffer and the sidewall GaN channel. A LED structure was regrown in the SER region with the bottom n-type GaN layer (n-electrode of the LED) connected to the HEMTs laterally, enabling monolithic integration of the HEMTs and LEDs (HEMT-LED) without metal-interconnection. In addition to saving substrate real estate, minimal interface resistance between the regrownmore » n-type GaN and the HEMT channel is a significant improvement over metal-interconnection. Furthermore, excellent off-state leakage characteristics of the driving transistor can also be guaranteed in such an integration scheme.« less

Thermoelectric properties of epitaxial β-FeSi2 thin films grown on Si(111) substrates with various film qualities

NASA Astrophysics Data System (ADS)

Watanabe, Kentaro; Taniguchi, Tatsuhiko; Sakane, Shunya; Aoki, Shunsuke; Suzuki, Takeyuki; Fujita, Takeshi; Nakamura, Yoshiaki

2017-05-01

Si-based epitaxial β-FeSi2 thin films are attractive as materials for on-chip thermoelectric power generators. We investigated the structure, crystallinity, and thermoelectric properties of β-FeSi2 thin films epitaxially grown on Si(111) substrates by using three different techniques: conventional reactive deposition epitaxy followed by molecular beam epitaxy (RDE+MBE), solid phase epitaxy (SPE) based on codeposition of Fe and Si presented previously, and SPE followed by MBE (SPE+MBE) presented newly by this work. Their epitaxial growth temperatures were fixed at 530 °C for comparison. RDE+MBE thin films exhibited high crystalline quality, but rough surfaces and rugged β-FeSi2/Si(111) interfaces. On the other hand, SPE thin films showed flat surfaces and abrupt β-FeSi2/Si(111) interfaces but low crystallinity. We found that SPE+MBE thin films realized crystallinity higher than SPE thin films, and also had flatter surfaces and sharper interfaces than RDE+MBE thin films. In SPE+MBE thin film growth, due to the initial SPE process with low temperature codeposition, thermal interdiffusion of Fe and Si was suppressed, resulting in the surface flatness and abrupt interface. Second high temperature MBE process improved the crystallinity. We also investigated thermoelectric properties of these β-FeSi2 thin films. Structural factors affecting the thermoelectric properties of RDE+MBE, SPE, and SPE+MBE thin films were investigated.

Quasi van der Waals epitaxy of copper thin film on single-crystal graphene monolayer buffer

NASA Astrophysics Data System (ADS)

Lu, Zonghuan; Sun, Xin; Washington, Morris A.; Lu, Toh-Ming

2018-03-01

Quasi van der Waals epitaxial growth of face-centered cubic Cu (~100 nm) thin films on single-crystal monolayer graphene is demonstrated using thermal evaporation at an elevated substrate temperature of 250 °C. The single-crystal graphene was transferred to amorphous (glass) and crystalline (quartz) SiO2 substrates for epitaxy study. Raman analysis showed that the thermal evaporation method had minimal damage to the graphene lattice during the Cu deposition. X-ray diffraction and electron backscatter diffraction analyses revealed that both Cu films are single-crystal with (1 1 1) out-of-plane orientation and in-plane Σ3 twin domains of 60° rotation. The crystallinity of the SiO2 substrates has a negligible effect on the Cu crystal orientation during the epitaxial growth, implying the strong screening effect of graphene. We also demonstrate the epitaxial growth of polycrystalline Cu on a commercial polycrystalline monolayer graphene consisting of two orientation domains offset 30° to each other. It confirms that the crystal orientation of the epitaxial Cu film follows that of graphene, i.e. the Cu film consists of two orientation domains offset 30° to each other when deposited on polycrystalline graphene. Finally, on the contrary to the report in the literature, we show that the direct current and radio frequency flip sputtering method causes significant damage to the graphene lattice during the Cu deposition process, and therefore neither is a suitable method for Cu epitaxial growth on graphene.

van der Waals epitaxy of Ge films on mica

NASA Astrophysics Data System (ADS)

Littlejohn, A. J.; Xiang, Y.; Rauch, E.; Lu, T.-M.; Wang, G.-C.

2017-11-01

To date, many materials have been successfully grown on substrates through van der Waals epitaxy without adhering to the constraint of lattice matching as is required for traditional chemical epitaxy. However, for elemental semiconductors such as Ge, this has been challenging and therefore it has not been achieved thus far. In this paper, we report the observation of Ge epitaxially grown on mica at a narrow substrate temperature range around 425 °C. Despite the large lattice mismatch (23%) and the lack of high in-plane symmetry in the mica surface, an epitaxial Ge film with [111] out-of-plane orientation is observed. Crystallinity and electrical properties degrade upon deviation from the ideal growth temperature, as shown by Raman spectroscopy, X-ray diffraction, and Hall effect measurements. X-ray pole figure analysis reveals that there exist multiple rotational domains in the epitaxial Ge film with dominant in-plane orientations between Ge [" separators="|1 ¯10 ] and mica[100] of (20 n )°, where n = 0, 1, 2, 3, 4, 5. A superlattice area mismatch model was used to account for the likelihood of the in-plane orientation formation and was found to be qualitatively consistent with the observed dominant orientations. Our observation of Ge epitaxy with one out-of-plane growth direction through van der Waals forces is a step toward the growth of single crystal Ge films without the constraint in the lattice and symmetry matches with the substrates.

Surface and interface of epitaxial CdTe film on CdS buffered van der Waals mica substrate

NASA Astrophysics Data System (ADS)

Yang, Y.-B.; Seewald, L.; Mohanty, Dibyajyoti; Wang, Y.; Zhang, L. H.; Kisslinger, K.; Xie, Weiyu; Shi, J.; Bhat, I.; Zhang, Shengbai; Lu, T.-M.; Wang, G.-C.

2017-08-01

Single crystal CdTe films are desirable for optoelectronic device applications. An important strategy of creating films with high crystallinity is through epitaxial growth on a proper single crystal substrate. We report the metalorganic chemical vapor deposition of epitaxial CdTe films on the CdS/mica substrate. The epitaxial CdS film was grown on a mica surface by thermal evaporation. Due to the weak van der Waals forces, epitaxy is achieved despite the very large interface lattice mismatch between CdS and mica (∼21-55%). The surface morphology of mica, CdS and CdTe were quantified by atomic force microscopy. The near surface structures, orientations and texture of CdTe and CdS films were characterized by the unique reflection high-energy electron diffraction surface pole figure technique. The interfaces of CdTe and CdS films and mica were characterized by X-ray pole figure technique and transmission electron microscopy. The out-of-plane and in-plane epitaxy of the heteroepitaxial films stack are determined to be CdTe(111)//CdS(0001)//mica(001) and [1 bar2 1 bar]CdTe//[ 1 bar100]CdS//[010]mica, respectively. The measured photoluminescence (PL), time resolved PL, photoresponse, and Hall mobility of the CdTe/CdS/mica indicate quality films. The use of van der Waals surface to grow epitaxial CdTe/CdS films offers an alternative strategy towards infrared imaging and solar cell applications.

Comparison of InGaAs(100) Grown by Chemical Beam Epitaxy and Metal Organic Chemical Vapor Deposition

NASA Technical Reports Server (NTRS)

Williams, M. D.; Greene, A. L.; Daniels-Race, T.; Lum, R. M.

2000-01-01

Secondary ion mass spectrometry is used to study the effects of substrate temperature on the composition and growth rate of InGaAs/InP(100) multilayers grown by chemical beam epitaxy, metal-organic chemical vapor deposition and solid source molecular beam epitaxy. The growth kinetics of the material grown by the different techniques are analyzed and compared.

Epitaxial Deposition Of Germanium Doped With Gallium

NASA Technical Reports Server (NTRS)

Huffman, James E.

1994-01-01

Epitaxial layers of germanium doped with gallium made by chemical vapor deposition. Method involves combination of techniques and materials used in chemical vapor deposition with GeH4 or GeCl4 as source of germanium and GaCl3 as source of gallium. Resulting epitaxial layers of germanium doped with gallium expected to be highly pure, with high crystalline quality. High-quality material useful in infrared sensors.

Stacked Quantum Wire AlN/GaN HEMTs

DTIC Science & Technology

2012-04-27

Zimmermann, Debdeep Jena and Huili Xing. Molecular beam epitaxy regrowth of ohmics in metal-face AlN/GaN transistors. International Conference on...mobility transistors with regrown ohmic contacts by molecular beam epitaxy . Physica Status Solidi (a), 208(7), 1617-1619, (2011). [9] Debdeep Jena...high Si doping concentrations grown by molecular beam epitaxy . Submitted, (2012). [14] Guowang Li, Ronghua Wang, Jai Verma, Yu Cao, Satyaki Ganguly

Development of 1300 nm GaAs-Based Microcavity Light-Emitting Diodes

DTIC Science & Technology

2001-06-01

vertical - cavity surface emitting lasers ( VCSEL ) and micro- cavity light- emitting diodes (MC-LED) for short-to-medium... epitaxial growth run [1 ]. Self-organized In(Ga)As quantum dot (QD) heterostructures grown by molecular beam epitaxy ( MBE ) are promising candidates as...successfully grown by molecular beam epitaxy on GaAs substrates without the need to rely on any in-situ calibration technique. Fabricated

The dependence of the wavelength on MBE growth parameters of GaAs quantum dot in AlGaAs NWs on Si (111) substrate

NASA Astrophysics Data System (ADS)

Reznik, R. R.; Shtrom, I. V.; Samsonenko, Yu B.; Khrebtov, A. I.; Soshnikov, I. P.; Cirlin, G. E.

2017-11-01

The data on the growth peculiarities and physical properties of GaAs insertions embedded in AlGaAs nanowires grown on Si (111) substrates by Au-assisted molecular beam epitaxy are presented. It is shown that by varying of the growth parameters it is possible to form structures like quantum dots emitting in a wide wavelengths range for both active and barrier parts. The technology proposed opens new possibilities for the integration of direct-band AIIIBV materials on silicon platform.

High-sensitivity two-terminal magnetoresistance devices using InGaAs/AlGaAs two-dimensional channel on GaAs substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Di-Cheng; Pan, You-Wei; Lin, Shih-Wei

2016-04-25

We demonstrate experimentally the two-terminal magnetic sensors exhibiting an extraordinary magneto-resistance effect by using an InGaAs quantum well channel with a metal-shunting structure. A high magneto-resistance of 17.3% and a sensitivity of 488.1 Ω/T have been obtained at 1 T and room temperature with our geometrical design. The two-contact configuration and the high-mobility electron transistor-compatible epitaxy structure make the devices promising for high-sensitivity magnetic sensing integration and applications.

Integrated, Flexible, High-efficiency Solar Cells: Epitaxial Lift-Off GaAs Solar Cells and Enabling Substrate Reuse

DTIC Science & Technology

2012-08-01

substrate cells. 3   GaAs CIGS CdTe α-SI Organic Trip. jun. Metam. C-Si Trip. Jun. Ge sub InP Power/Weight  Tradeoff...40   -  AR  coa<ng  ( ZnS /MgF2)150nm...AR  coa<ng  ( ZnS /MgF2)150nm                                      $5   -  HF

Final Report: Vapor Transport Deposition for Thin Film III-V Photovoltaics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boettcher, Shannon; Greenaway, Ann; Boucher, Jason

2016-02-10

Silicon, the dominant photovoltaic (PV) technology, is reaching its fundamental performance limits as a single absorber/junction technology. Higher efficiency devices are needed to reduce cost further because the balance of systems account for about two-thirds of the overall cost of the solar electricity. III-V semiconductors such as GaAs are used to make the highest-efficiency photovoltaic devices, but the costs of manufacture are much too high for non-concentrated terrestrial applications. The cost of III-V’s is driven by two factors: (1) metal-organic chemical vapor deposition (MOCVD), the dominant growth technology, employs expensive, toxic and pyrophoric gas-phase precursors, and (2) the growth substratesmore » conventionally required for high-performance devices are monocrystalline III-V wafers. The primary goal of this project was to show that close-spaced vapor transport (CSVT), using water vapor as a transport agent, is a scalable deposition technology for growing low-cost epitaxial III-V photovoltaic devices. The secondary goal was to integrate those devices on Si substrates for high-efficiency tandem applications using interface nanopatterning to address the lattice mismatch. In the first task, we developed a CSVT process that used only safe solid-source powder precursors to grow epitaxial GaAs with controlled n and p doping and mobilities/lifetimes similar to that obtainable via MOCVD. Using photoelectrochemical characterization, we showed that the best material had near unity internal quantum efficiency for carrier collection and minority carrier diffusions lengths in of ~ 8 μm, suitable for PV devices with >25% efficiency. In the second task we developed the first pn junction photovoltaics using CSVT and showed unpassivated structures with open circuit photovoltages > 915 mV and internal quantum efficiencies >0.9. We also characterized morphological and electrical defects and identified routes to reduce those defects. In task three we grew epitaxial ternary GaAsxP 1-x and In 0.5Ga 0.5P alloys, with composition set by the ratio of GaAs/GaP or InP/GaP mixed as the source powder. GaAs 0.3P 0.7 has the appropriate bandgap to serve as a top cell on Si and In 0.5Ga 0.5P is near the composition used as a surface passivation layer on GaAs pn junction photovoltaics. In the final task we demonstrated III-V selective area epitaxy using CSVT as a first step toward the growth of III-V micro- or nanostructures for an integrated tandem solar cell on Si. We also found that direct epitaxial growth on Si appears to be impossible in the current H 2O-CSVT reactor design, likely due to the formation of SiO x. This work sets the stage for targeted development of an improved CSVT process and for the scale up of the proof-of-concept work from a research to manufacturing-relevant platform. Replacing H 2O as a transport agent with HCl would provide the ability to deposit directly on Si by avoiding oxide formation and to allow for the deposition of Al-containing alloys that would otherwise oxidize. Improved engineering design and implementation of an in-line multi-station CSVT would allow for direct deposition of device structures in a single system.« less

Interface magnetic anisotropy for monatomic layer-controlled Co/Ni epitaxial multilayers

NASA Astrophysics Data System (ADS)

Shioda, A.; Seki, T.; Shimada, J.; Takanashi, K.

2015-05-01

The magnetic properties for monatomic layer (ML)-controlled Co/Ni epitaxial multilayers were investigated in order to evaluate the interface magnetic anisotropy energy (Ks) between Ni and Co layers. The Co/Ni epitaxial multilayers were prepared on an Al2O3 (11-20) substrate with V/Au buffer layers. The value of Ks was definitely larger than that for the textured Co/Ni grown on a thermally oxidized Si substrate. We consider that the sharp interface for the epitaxial Co/Ni played a role to increase the value of Ks, which also enabled us to obtain perpendicular magnetization even for the 1 ML-Co/1 ML-Ni multilayer.

Epitaxial BiFeO3 thin films fabricated by chemical solution deposition

NASA Astrophysics Data System (ADS)

Singh, S. K.; Kim, Y. K.; Funakubo, H.; Ishiwara, H.

2006-04-01

Epitaxial BiFeO3 (BFO) thin films were fabricated on (001)-, (110)-, and (111)-oriented single-crystal SrRuO3(SRO )/SrTiO3(STO) structures by chemical solution deposition. X-ray diffraction indicates the formation of an epitaxial single-phase perovskite structure and pole figure measurement confirms the cube-on-cube epitaxial relationship of BFO ‖SRO‖STO. Chemical-solution-deposited BFO films have a rhombohedral structure with lattice parameter of 0.395nm, which is the same structure as that of a bulk single crystal. The remanent polarization of approximately 50μC/cm2 was observed in BFO (001) thin films at 80K.

Method for rapid, controllable growth and thickness, of epitaxial silicon films

DOEpatents

Wang, Qi [Littleton, CO; Stradins, Paul [Golden, CO; Teplin, Charles [Boulder, CO; Branz, Howard M [Boulder, CO

2009-10-13

A method of producing epitaxial silicon films on a c-Si wafer substrate using hot wire chemical vapor deposition by controlling the rate of silicon deposition in a temperature range that spans the transition from a monohydride to a hydrogen free silicon surface in a vacuum, to obtain phase-pure epitaxial silicon film of increased thickness is disclosed. The method includes placing a c-Si substrate in a HWCVD reactor chamber. The method also includes supplying a gas containing silicon at a sufficient rate into the reaction chamber to interact with the substrate to deposit a layer containing silicon thereon at a predefined growth rate to obtain phase-pure epitaxial silicon film of increased thickness.

Aqueous solution epitaxy of CdS layers on CuInSe 2

NASA Astrophysics Data System (ADS)

Furlong, M. J.; Froment, M.; Bernard, M. C.; Cortès, R.; Tiwari, A. N.; Krejci, M.; Zogg, H.; Lincot, D.

1998-09-01

Epitaxial CdS thin films have been deposited from an aqueous ammonia solution containing cadmium ions and thiourea as precursors on single crystalline CuInSe 2 films prepared by MBE on Si(1 1 1) and GaAs(1 0 0) substrates. The structure and quality of the films were investigated by RHEED, glancing angle XRD and HRTEM in cross-section. The films are cubic on (1 0 0) substrates, and mixed cubic and hexagonal on (1 1 1) substrates due to the presence of stacking faults parallel to the substrate. The growth is under surface kinetic control with an activation energy of 85 kJ mol -1. Epitaxy improves with increasing temperature and an epitaxial transition temperature at approx. 60°C is demonstrated in the selected experimental conditions. The epitaxy is very sensitive to the preparation of the surface. Beneficial effects of in situ or ex situ chemical etching are found. Similarities between aqueous solution and vapor-phase chemical depositions are pointed out.

Epitaxy of semiconductor-superconductor nanowires

NASA Astrophysics Data System (ADS)

Krogstrup, P.; Ziino, N. L. B.; Chang, W.; Albrecht, S. M.; Madsen, M. H.; Johnson, E.; Nygård, J.; Marcus, C. M.; Jespersen, T. S.

2015-04-01

Controlling the properties of semiconductor/metal interfaces is a powerful method for designing functionality and improving the performance of electrical devices. Recently semiconductor/superconductor hybrids have appeared as an important example where the atomic scale uniformity of the interface plays a key role in determining the quality of the induced superconducting gap. Here we present epitaxial growth of semiconductor-metal core-shell nanowires by molecular beam epitaxy, a method that provides a conceptually new route to controlled electrical contacting of nanostructures and the design of devices for specialized applications such as topological and gate-controlled superconducting electronics. Our materials of choice, InAs/Al grown with epitaxially matched single-plane interfaces, and alternative semiconductor/metal combinations allowing epitaxial interface matching in nanowires are discussed. We formulate the grain growth kinetics of the metal phase in general terms of continuum parameters and bicrystal symmetries. The method realizes the ultimate limit of uniform interfaces and seems to solve the soft-gap problem in superconducting hybrid structures.

Method of fabricating germanium and gallium arsenide devices

NASA Technical Reports Server (NTRS)

Jhabvala, Murzban (Inventor)

1990-01-01

A method of semiconductor diode fabrication is disclosed which relies on the epitaxial growth of a precisely doped thickness layer of gallium arsenide or germanium on a semi-insulating or intrinsic substrate, respectively, of gallium arsenide or germanium by either molecular beam epitaxy (MBE) or by metal-organic chemical vapor deposition (MOCVD). The method involves: depositing a layer of doped or undoped silicon dioxide on a germanium or gallium arsenide wafer or substrate, selectively removing the silicon dioxide layer to define one or more surface regions for a device to be fabricated thereon, growing a matched epitaxial layer of doped germanium or gallium arsenide of an appropriate thickness using MBE or MOCVD techniques on both the silicon dioxide layer and the defined one or more regions; and etching the silicon dioxide and the epitaxial material on top of the silicon dioxide to leave a matched epitaxial layer of germanium or gallium arsenide on the germanium or gallium arsenide substrate, respectively, and upon which a field effect device can thereafter be formed.

Manipulation of Dirac cones in metal-intercalated epitaxial graphene

NASA Astrophysics Data System (ADS)

Wang, Cai-Zhuang; Kim, Minsung; Tringides, Michael; Ho, Kai-Ming

Graphene is one of the most attractive materials from both fundamental and practical points of view due to its characteristic Dirac cones. The electronic property of graphene can be modified through the interaction with substrate or another graphene layer as illustrated in few-layer epitaxial graphene. Recently, metal intercalation became an effective method to manipulate the electronic structure of graphene by modifying the coupling between the constituent layers. In this work, we show that the Dirac cones of epitaxial graphene can be manipulated by intercalating rare-earth metals. We demonstrate that rare-earth metal intercalated epitaxial graphene has tunable band structures and the energy levels of Dirac cones as well as the linear or quadratic band dispersion can be controlled depending on the location of the intercalation layer and density. Our results could be important for applications and characterizations of the intercalated epitaxial graphene. Supported by the U.S. DOE-BES under Contract No. DE-AC02-07CH11358.

Powder free PECVD epitaxial silicon by plasma pulsing or increasing the growth temperature

NASA Astrophysics Data System (ADS)

Chen, Wanghua; Maurice, Jean-Luc; Vanel, Jean-Charles; Cabarrocas, Pere Roca i.

2018-06-01

Crystalline silicon thin films are promising candidates for low cost and flexible photovoltaics. Among various synthesis techniques, epitaxial growth via low temperature plasma-enhanced chemical vapor deposition is an interesting choice because of two low temperature related benefits: low thermal budget and better doping profile control. However, increasing the growth rate is a tricky issue because the agglomeration of clusters required for epitaxy leads to powder formation in the plasma. In this work, we have measured precisely the time evolution of the self-bias voltage in silane/hydrogen plasmas at millisecond time scale, for different values of the direct-current bias voltage applied to the radio frequency (RF) electrode and growth temperatures. We demonstrate that the decisive factor to increase the epitaxial growth rate, i.e. the inhibition of the agglomeration of plasma-born clusters, can be obtained by decreasing the RF OFF time or increasing the growth temperature. The influence of these two parameters on the growth rate and epitaxial film quality is also presented.

On the origin of reflectance-anisotropy oscillations during GaAs (0 0 1) homoepitaxy

NASA Astrophysics Data System (ADS)

Ortega-Gallegos, J.; Guevara-Macías, L. E.; Ariza-Flores, A. D.; Castro-García, R.; Lastras-Martínez, L. F.; Balderas-Navarro, R. E.; López-Estopier, R. E.; Lastras-Martínez, A.

2018-05-01

We report on the first spectroscopic study of reflectance-anisotropy (RA) oscillations during molecular beam epitaxy (MBE) GaAs homoepitaxy. Real-time RA spectra measured during epitaxial growth were carried out with a recently developed rapid RA multichannel spectrometer with 100 ms per spectrum acquisition time. An analysis of the time-resolved RA spectra shows that RA oscillations are mostly due to the periodic modulation of the surface orthorhombic strain associated to surface reconstruction. Results reported here demonstrate the power of real-time RA spectroscopy as a probe for the study of epitaxial growth processes. In particular, given its sub monolayer surface-strain sensitivity, RA spectroscopy results a very convenient tool to study epitaxial growth mechanisms in real-time with sub monolayer resolution. This capability allows for real-time RA spectroscopy to be used as a probe for the in situ, real-time control of epitaxial growth, with the additional advantage of operating in higher pressure systems such as CVD, where RHEED monitoring cannot be implemented.

Removable polytetrafluoroethylene template based epitaxy of ferroelectric copolymer thin films

NASA Astrophysics Data System (ADS)

Xia, Wei; Chen, Qiusong; Zhang, Jian; Wang, Hui; Cheng, Qian; Jiang, Yulong; Zhu, Guodong

2018-04-01

In recent years ferroelectric polymers have shown their great potentials in organic and flexible electronics. To meet the requirements of high-performance and low energy consumption of novel electronic devices and systems, structural and electrical properties of ferroelectric polymer thin films are expected to be further optimized. One possible way is to realize epitaxial growth of ferroelectric thin films via removable high-ordered polytetrafluoroethylene (PTFE) templates. Here two key parameters in epitaxy process, annealing temperature and applied pressure, are systematically studied and thus optimized through structural and electrical measurements of ferroelectric copolymer thin films. Experimental results indicate that controlled epitaxial growth is realized via suitable combination of both parameters. Annealing temperature above the melting point of ferroelectric copolymer films is required, and simultaneously moderate pressure (around 2.0 MPa here) should be applied. Over-low pressure (around 1.0 MPa here) usually results in the failure of epitaxy process, while over-high pressure (around 3.0 MPa here) often results in residual of PTFE templates on ferroelectric thin films.

Choice of Substrate Material for Epitaxial CdTe Solar Cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Tao; Kanevce, Ana; Sites, James R.

2015-06-14

Epitaxial CdTe with high quality, low defect density, and high carrier concentration should in principle yield high-efficiency photovoltaic devices. However, insufficient effort has been given to explore the choice of substrate for high-efficiency epitaxial CdTe solar cells. In this paper, we use numerical simulations to investigate three crystalline substrates: silicon (Si), InSb, and CdTe each substrate material are generally discussed.

Rapid low-temperature epitaxial growth using a hot-element assisted chemical vapor deposition process

DOEpatents

Iwancizko, Eugene; Jones, Kim M.; Crandall, Richard S.; Nelson, Brent P.; Mahan, Archie Harvin

2001-01-01

The invention provides a process for depositing an epitaxial layer on a crystalline substrate, comprising the steps of providing a chamber having an element capable of heating, introducing the substrate into the chamber, heating the element at a temperature sufficient to decompose a source gas, passing the source gas in contact with the element; and forming an epitaxial layer on the substrate.

Secondary ion mass spectrometry study of ex situ annealing of epitaxial GaAs grown on Si substrates

NASA Technical Reports Server (NTRS)

Radhakrishnan, G.; Mccullough, O.; Cser, J.; Katz, J.

1988-01-01

Samples of epitaxial GaAs grown on (100) Si substrates using molecular beam epitaxy were annealed at four different temperatures, from 800 to 950 C. Following annealing, the samples were analyzed using secondary ion mass spectrometry. Depth profiles of Ga, As, and Si reveal optimum conditions for annealing, and place a lower limit on a damage threshold for GaAs/Si substrates.

Gallium Nitride (GaN) High Power Electronics (FY11)

DTIC Science & Technology

2012-01-01

GaN films grown by metal-organic chemical vapor deposition (MOCVD) and ~1010 in films grown by molecular beam epitaxy (MBE) when they are deposited...inductively coupled plasma I-V current-voltage L-HVPE low doped HVPE MBE molecular beam epitaxy MOCVD metal-organic chemical vapor deposition...figure of merit HEMT high electron mobility transistor H-HVPE high doped HVPE HPE high power electronics HVPE hydride vapor phase epitaxy ICP

AlGaSb Buffer Layers for Sb-Based Transistors

DTIC Science & Technology

2010-01-01

transistor ( HEMT ), molecular beam epitaxy (MBE), field-effect transistor (FET), buffer layer INTRODUCTION High-electron-mobility transistors ( HEMTs ) with InAs...monolayers/s. The use of thinner buffer layers reduces molecular beam epitaxial growth time and source consumption. The buffer layers also exhibit...source. In addition, some of the flux from an Sb cell in a molecular beam epitaxy (MBE) system will deposit near the mouth of the cell, eventually

Compound Semiconductors for Low-Power p-Channel Field-Effect Transistors

DTIC Science & Technology

2009-07-01

making III–V FETs has been different than for silicon FETs. Growth techniques such as molecular beam epitaxy (MBE) are used to create heterostructures in...lities for III–V compounds. This article reviews the recent work to enhance hole mobilities in antimonide-based quantum wells. Epitaxial heterostructures...article reviews the recent work to enhance hole mobilities in antimonide-based quantum wells. Epitaxial heterostructures have been grown with the channel

Development of Mid-infrared GeSn Light Emitting Diodes on a Silicon Substrate

DTIC Science & Technology

2015-04-22

Materials, Heterostrucuture Semiconductor, Light Emitting Devices, Molecular Beam Epitaxy 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF ABSTRACT...LED) structure. Optimization of traditional and hetero- P-i-N structures designed and grown on Ge-buffer Si (001) wafers using molecular beam epitaxy ...designed structures were grown on Ge-buffer Si (001) wafers using molecular beam epitaxy (MBE) with the low-temperature growth technique. (The Ge-buffer

Ferroelectric properties of YMnO3 epitaxial films for ferroelectric-gate field-effect transistors

NASA Astrophysics Data System (ADS)

Ito, Daisuke; Fujimura, Norifumi; Yoshimura, Takeshi; Ito, Taichiro

2003-05-01

Ferroelectric properties of YMnO3 epitaxial films were studied. The ferroelectric properties of epitaxially grown (0001) YMnO3 films on (111)Pt/(0001)sapphire (epi-YMO/Pt) with an excellent crystallinity were compared to (0001)-oriented poly crystalline films on (111)Pt/ZrO2/SiO2/Si. The epi-YMO/Pt had saturated polarization-electric-field (P-E) hysteresis loops, with a remanent polarization (Pr) of 1.7 μC/cm2 and a coercive field (Ec) of 80 kV/cm. The fatigue property showed no degradation up to 1010 measured cycles. These results suggested that the YMnO3 epitaxial films were suitable ferroelectric material for the ferroelectric-gate field-effect transistors. Consequently, epitaxially grown (0001)YMnO3 films on epitaxial Y2O3/Si (epi-YMO/Si) were fabricated. The epi-YMO/Si capacitor had almost equivalent crystallinity compared to epi-YMO/Pt. It was recognized that the epi-YMO/Si capacitor exhibited the ferroelectric type C-V hysteresis loop with the width of the memory window of 4.8 V, which was almost identical to the value of twice coercive voltage of the P-E hysteresis loops of the epi-YMO/Pt. A retention time exceeding 104 s was obtained in the epi-YMO/Si capacitor.

van der Waals epitaxy of SnS film on single crystal graphene buffer layer on amorphous SiO2/Si

NASA Astrophysics Data System (ADS)

Xiang, Yu; Yang, Yunbo; Guo, Fawen; Sun, Xin; Lu, Zonghuan; Mohanty, Dibyajyoti; Bhat, Ishwara; Washington, Morris; Lu, Toh-Ming; Wang, Gwo-Ching

2018-03-01

Conventional hetero-epitaxial films are typically grown on lattice and symmetry matched single crystal substrates. We demonstrated the epitaxial growth of orthorhombic SnS film (∼500 nm thick) on single crystal, monolayer graphene that was transferred on the amorphous SiO2/Si substrate. Using X-ray pole figure analysis we examined the structure, quality and epitaxy relationship of the SnS film grown on the single crystal graphene and compared it with the SnS film grown on commercial polycrystalline graphene. We showed that the SnS films grown on both single crystal and polycrystalline graphene have two sets of orientation domains. However, the crystallinity and grain size of the SnS film improve when grown on the single crystal graphene. Reflection high-energy electron diffraction measurements show that the near surface texture has more phases as compared with that of the entire film. The surface texture of a film will influence the growth and quality of film grown on top of it as well as the interface formed. Our result offers an alternative approach to grow a hetero-epitaxial film on an amorphous substrate through a single crystal graphene buffer layer. This strategy of growing high quality epitaxial thin film has potential applications in optoelectronics.

Selective growth of Ge1- x Sn x epitaxial layer on patterned SiO2/Si substrate by metal-organic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Takeuchi, Wakana; Washizu, Tomoya; Ike, Shinichi; Nakatsuka, Osamu; Zaima, Shigeaki

2018-01-01

We have investigated the selective growth of a Ge1- x Sn x epitaxial layer on a line/space-patterned SiO2/Si substrate by metal-organic chemical vapor deposition. We examined the behavior of a Sn precursor of tributyl(vinyl)tin (TBVSn) during the growth on Si and SiO2 substrates and investigated the effect of the Sn precursor on the selective growth. The selective growth of the Ge1- x Sn x epitaxial layer was performed under various total pressures and growth temperatures of 300 and 350 °C. The selective growth of the Ge1- x Sn x epitaxial layer on the patterned Si region is achieved at a low total pressure without Ge1- x Sn x growth on the SiO2 region. In addition, we found that the Sn content in the Ge1- x Sn x epitaxial layer increases with width of the SiO2 region for a fixed Si width even with low total pressure. To control the Sn content in the selective growth of the Ge1- x Sn x epitaxial layer, it is important to suppress the decomposition and migration of Sn and Ge precursors.

High quality self-separated GaN crystal grown on a novel nanoporous template by HVPE.

PubMed

Huo, Qin; Shao, Yongliang; Wu, Yongzhong; Zhang, Baoguo; Hu, Haixiao; Hao, Xiaopeng

2018-02-16

In this study, a novel nanoporous template was obtained by a two-step etching process from MOCVD-GaN/Al 2 O 3 (MGA) with electrochemical etching sequentially followed by chemical wet etching. The twice-etched MOCVD-GaN/Al 2 O 3 (TEMGA) templates were utilized to grow GaN crystals by hydride vapor phase epitaxy (HVPE) method. The GaN crystals were separated spontaneously from the TEMGA template with the assistance of voids formed by the etched nanopores. Several techniques were utilized to characterize the quality of the free-standing GaN crystals obtained from the TEMGA template. Results showed that the quality of the as-obtained GaN crystals was improved obviously compared with those grown on the MGA. This convenient technique can be applied to grow high-quality free-standing GaN crystals.

Utilization of plasmas for graphene synthesis

NASA Astrophysics Data System (ADS)

Shashurin, Alexey; Keidar, Michael

2013-10-01

Graphene is a one-atom-thick planar sheet of carbon atoms that are densely packed in a honeycomb crystal lattice. Grapheen has tremendous range of potential applications ranging from high-speed transistors to electrochemical energy storage devices and biochemical sensors. Methods of graphene synthesis include mechanical exfoliation, epitaxial growth on SiC, CVD and colloidal suspensions. In this work the utilization of plasmas in synthesis process is considered. Types of carbonaceous structures produced by the anodic arc and regions of their synthesis were studied. Ultimate role of substrate temperature and transformations occurring with various carbonaceous structures generated in plasma discharge were considered. Formation of graphene film on copper substrate was detected at temperatures around the copper melting point. The film was consisted of several layers graphene flakes having typical sizes of about 200 nm. Time required for crystallization of graphene on externally heated substrates was determined. This work was supported by National Science Foundation (NSF Grant No. CBET-1249213).

Multilayer-Grown Ultrathin Nanostructured GaAs Solar Cells as a Cost-Competitive Materials Platform for III-V Photovoltaics.

PubMed

Gai, Boju; Sun, Yukun; Lim, Haneol; Chen, Huandong; Faucher, Joseph; Lee, Minjoo L; Yoon, Jongseung

2017-01-24

Large-scale deployment of GaAs solar cells in terrestrial photovoltaics demands significant cost reduction for preparing device-quality epitaxial materials. Although multilayer epitaxial growth in conjunction with printing-based materials assemblies has been proposed as a promising route to achieve this goal, their practical implementation remains challenging owing to the degradation of materials properties and resulting nonuniform device performance between solar cells grown in different sequences. Here we report an alternative approach to circumvent these limitations and enable multilayer-grown GaAs solar cells with uniform photovoltaic performance. Ultrathin single-junction GaAs solar cells having a 300-nm-thick absorber (i.e., emitter and base) are epitaxially grown in triple-stack releasable multilayer assemblies by molecular beam epitaxy using beryllium as a p-type impurity. Microscale (∼500 × 500 μm 2 ) GaAs solar cells fabricated from respective device layers exhibit excellent uniformity (<3% relative) of photovoltaic performance and contact properties owing to the suppressed diffusion of p-type dopant as well as substantially reduced time of epitaxial growth associated with ultrathin device configuration. Bifacial photon management employing hexagonally periodic TiO 2 nanoposts and a vertical p-type metal contact serving as a metallic back-surface reflector together with specialized epitaxial design to minimize parasitic optical losses for efficient light trapping synergistically enable significantly enhanced photovoltaic performance of such ultrathin absorbers, where ∼17.2% solar-to-electric power conversion efficiency under simulated AM1.5G illumination is demonstrated from 420-nm-thick single-junction GaAs solar cells grown in triple-stack epitaxial assemblies.

Surface and interface of epitaxial CdTe film on CdS buffered van der Waals mica substrate

DOE PAGES

Yang, Y. -B.; Seewald, L.; Mohanty, Dibyajyoti; ...

2017-03-31

We report single crystal CdTe films are desirable for optoelectronic device applications. An important strategy of creating films with high crystallinity is through epitaxial growth on a proper single crystal substrate. We report the metalorganic chemical vapor deposition of epitaxial CdTe films on the CdS/mica substrate. The epitaxial CdS film was grown on a mica surface by thermal evaporation. Due to the weak van der Waals forces, epitaxy is achieved despite the very large interface lattice mismatch between CdS and mica (~21–55%). The surface morphology of mica, CdS and CdTe were quantified by atomic force microscopy. The near surface structures, orientations and texture of CdTe and CdS films were characterized by the unique reflection high-energy electron diffraction surface pole figure technique. The interfaces of CdTe and CdS films and mica were characterized by X-ray pole figure technique and transmission electron microscopy. The out-of-plane and in-plane epitaxy of the heteroepitaxial films stack are determined to be CdTe(111)//CdS(0001)//mica(001) and [more » $$\\overline{1}2\\overline{1}$$] CdTe//[$$\\overline{1}100$$] CdS//[010] mica, respectively. The measured photoluminescence (PL), time resolved PL, photoresponse, and Hall mobility of the CdTe/CdS/mica indicate quality films. Finally, the use of van der Waals surface to grow epitaxial CdTe/CdS films offers an alternative strategy towards infrared imaging and solar cell applications.« less

Surface and interface of epitaxial CdTe film on CdS buffered van der Waals mica substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Y. -B.; Seewald, L.; Mohanty, Dibyajyoti

We report single crystal CdTe films are desirable for optoelectronic device applications. An important strategy of creating films with high crystallinity is through epitaxial growth on a proper single crystal substrate. We report the metalorganic chemical vapor deposition of epitaxial CdTe films on the CdS/mica substrate. The epitaxial CdS film was grown on a mica surface by thermal evaporation. Due to the weak van der Waals forces, epitaxy is achieved despite the very large interface lattice mismatch between CdS and mica (~21–55%). The surface morphology of mica, CdS and CdTe were quantified by atomic force microscopy. The near surface structures, orientations and texture of CdTe and CdS films were characterized by the unique reflection high-energy electron diffraction surface pole figure technique. The interfaces of CdTe and CdS films and mica were characterized by X-ray pole figure technique and transmission electron microscopy. The out-of-plane and in-plane epitaxy of the heteroepitaxial films stack are determined to be CdTe(111)//CdS(0001)//mica(001) and [more » $$\\overline{1}2\\overline{1}$$] CdTe//[$$\\overline{1}100$$] CdS//[010] mica, respectively. The measured photoluminescence (PL), time resolved PL, photoresponse, and Hall mobility of the CdTe/CdS/mica indicate quality films. Finally, the use of van der Waals surface to grow epitaxial CdTe/CdS films offers an alternative strategy towards infrared imaging and solar cell applications.« less

Stress and magnetism in LaCoO3 films

NASA Astrophysics Data System (ADS)

Demkov, Alex

2012-02-01

Cobaltates exhibit a wide variety of exciting electronic properties resulting from strong electron correlations; these include superconductivity, giant magnetoresistance, metal-insulator transition, and strong thermoelectric effects. This makes them an excellent platform to study correlated electron physics, as well as being useful for various applications in electronics and sensors. In the ground state in the bulk, the prototypical complex cobalt oxide LaCoO3 is in a spin-compensated low-spin state (t2g^6), which results in the ground state being nonmagnetic. In a recent experiment, Fuchs et al. (Phys. Rev. B 75, 144402 (2007)) have demonstrated that a ferromagnetic ground state could be stabilized by epitaxial tensile strain resulting in a Curie temperature (TC) of ˜90 K when LaCoO3 (LCO) is grown on SrTiO3 (STO) using pulsed laser deposition. In this talk I will discuss our recent successful attempt to integrate a LCO/STO heterostructure with Si (001) using molecular beam epitaxy. We have grown strained, epitaxial LaCoO3 on (100)-oriented silicon using a single crystal STO buffer (Appl.Phys. Lett. 98, 053104 (2011)). SQUID magnetization measurements confirm that the ground state of the strained LaCoO3 is ferromagnetic with a TC of 85 K. Our first-principles calculations of strained LaCoO3 using the LSDA+U method show that beyond biaxial tensile strain of 2.5% local magnetic moments, originating from the high spin state of Co^3+, emerge in a low spin Co^3+ matrix. Ferromagnetism found in tensile-strained LaCoO3 is tightly coupled to the material's orbital and structural response to applied strain. Theoretical calculations show how LaCoO3 accommodates tensile strain via spin state disproportionation, resulting in an unusual sublattice structure.

GaAsP/InGaP HBTs grown epitaxially on Si substrates: Effect of dislocation density on DC current gain

NASA Astrophysics Data System (ADS)

Heidelberger, Christopher; Fitzgerald, Eugene A.

2018-04-01

Heterojunction bipolar transistors (HBTs) with GaAs0.825P0.175 bases and collectors and In0.40Ga0.60P emitters were integrated monolithically onto Si substrates. The HBT structures were grown epitaxially on Si via metalorganic chemical vapor deposition, using SiGe compositionally graded buffers to accommodate the lattice mismatch while maintaining threading dislocation density at an acceptable level (˜3 × 106 cm-2). GaAs0.825P0.175 is used as an active material instead of GaAs because of its higher bandgap (increased breakdown voltage) and closer lattice constant to Si. Misfit dislocation density in the active device layers, measured by electron-beam-induced current, was reduced by making iterative changes to the epitaxial structure. This optimized process culminated in a GaAs0.825P0.175/In0.40Ga0.60P HBT grown on Si with a DC current gain of 156. By considering the various GaAsP/InGaP HBTs grown on Si substrates alongside several control devices grown on GaAs substrates, a wide range of threading dislocation densities and misfit dislocation densities in the active layers could be correlated with HBT current gain. The effect of threading dislocations on current gain was moderated by the reduction in minority carrier lifetime in the base region, in agreement with existing models for GaAs light-emitting diodes and photovoltaic cells. Current gain was shown to be extremely sensitive to misfit dislocations in the active layers of the HBT—much more sensitive than to threading dislocations. We develop a model for this relationship where increased base current is mediated by Fermi level pinning near misfit dislocations.

In induced reconstructions of Si(1 1 1) as superlattice matched epitaxial templates for InN growth

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kuyyalil, Jithesh; Tangi, Malleswararao; Shivaprasad, S.M., E-mail: smsprasad@jncasr.ac.in

Graphical abstract: Display Omitted Highlights: ► A novel growth method to form InN at low growth temperatures. ► Use of Si reconstruction as a growth template for group III nitrides. ► Band gap variation of InN – Moss–Burstein shift – non-parabolic conduction band for InN. ► Super lattice matching epitaxy of metal induced reconstructions with III–V unit cell. -- Abstract: Indium induced surface reconstructions of Si(1 1 1)-7 × 7 are used as templates to grow high quality InN. We grow InN on Si(1 1 1)-7 × 7, Si(1 1 1)-4 × 1-In and Si(1 1 1)-1 × 1-In reconstructedmore » surfaces and study the quality of the films formed using complementary characterization tools. InN grown on Si(1 1 1)-1 × 1-In reconstruction shows superior film quality with lowest band-edge emission having a narrow full width at half maximum, intense and narrow 0 0 0 2 X-ray diffraction, low surface roughness and carrier concentration an order lower than other samples. We attribute the high quality of the film formed at 300 °C to the integral matching of InN and super lattice dimensions, we also study the reasons for the band gap variation of InN in the literature. Present study demonstrates the proposed Superlattice Matched Epitaxy can be a general approach to grow good quality InN at much lower growth temperature on compatible In induced reconstructions of the Si surface.« less

Uncooled infrared photodetectors in Poland

NASA Astrophysics Data System (ADS)

Piotrowski, J.; Piotrowski, A.

2006-03-01

The history and present status of the middle and long wavelength Hg1-xCdxTe infrared detectors in Poland are reviewed. Research and development efforts in Poland were concentrated mostly on uncooled market niche. Technology of the infrared photodetectors has been developed by several research groups. The devices are based on mercury-based variable band gap semiconductor alloys. Modified isothermal vapour phase epitaxy (ISOVPE) has been used for many years for research and commercial fabrication of photoconductive, photoelectromagnetic and other devices. Bulk growth and liquid phase epitaxy was also used. At present, the fabrication of IR devices relies on low temperature epitaxial technique, namely metalorganic vapour phase deposition (MOCVD), frequently in combination with the ISOVPE. Photoconductive and photoelectromagnetic detectors are still in production. The devices are gradually replaced with photovoltaic devices which offer inherent advantages of no electric or magnetic bias, no heat load and no flicker noise. Potentially, the PV devices could offer high performance and very fast response. At present, the uncooled long wavelength devices of conventional design suffer from two issues; namely low quantum efficiency and very low junction resistance. It makes them useless for practical applications. The problems have been solved with advanced 3D band gap engineered architecture, multiple cell heterojunction devices connected in series, monolithic integration of the detectors with microoptics and other improvements. Present fabrication program includes devices which are optimized for operation at any wavelength within a wide spectral range 1-15 μm and 200-300 K temperature range. Special solutions have been applied to improve speed of response. Some devices show picoseconds range response time. The devices have found numerous civilian and military applications.

The controlled growth of perovskite thin films: Opportunities, challenges, and synthesis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schlom, D.G.; Theis, C.D.; Hawley, M.E.

1997-10-01

The broad spectrum of electronic and optical properties exhibited by perovskites offers tremendous opportunities for microelectronic devices, especially when a combination of properties in a single device is desired. Molecular beam epitaxy (MBE) has achieved unparalleled control in the integration of semiconductors at the monolayer-level; its use for the integration of perovskites with similar nanoscale customization appears promising. Composition control and oxidation are often significant challenges to the growth of perovskites by MBE, but we show that these can be met through the use of purified ozone as an oxidant and real-time atomic absorption composition control. The opportunities, challenges, andmore » synthesis of oxide heterostructures by reactive MBE are described, with examples taken from the growth of oxide superconductors and oxide ferroelectrics.« less

Epitaxial Garnets and Hexagonal Ferrites.

DTIC Science & Technology

1983-12-01

operating at frequencies between 1 GHz and 25 GHz. 2. Investigate LPE growth of lithium ferrite with the objective of preparing low-loss, large area films ...and hexagonal ferrites when the series of contracts began in 1975. At that time the liquid phase epitaxy method for growth of magnetic garnet films ...principal interest in epitaxial garnets was for magnetic bubble memories. For this Uapplication the films had to be about 3pm thick with low defect density

Epitaxial Garnets and Hexagonal Ferrites.

DTIC Science & Technology

1980-02-28

shaped LPE garnet samples with 31.5um film thickness. We were informed that initial evalu- ation showed acceptably low insertion loss and that the material...frequencies above 25 GHz. c. Furnish up to eight (8) liquid phase epitaxy yttrium iron garnet films to RADC/EEA for testing and evaluation. These tasks...a "Method for Controlling Resonance Frequency of Yttrium Iron Garnet Films ." A patent, "Epitaxial Growth of M-type Hexagonal Ferrite Films on Spinel

Epitaxial thin film growth in outer space

NASA Technical Reports Server (NTRS)

Ignatiev, Alex; Chu, C. W.

1988-01-01

A new concept for materials processing in space exploits the ultravacuum component of space for thin-film epitaxial growth. The unique LEO space environment is expected to yield 10-ftorr or better pressures, semiinfinite pumping speeds, and large ultravacuum volume (about 100 cu m) without walls. These space ultravacuum properties promise major improvement in the quality, unique nature, and throughput of epitaxially grown materials, including semiconductors, magnetic materials, and thin-film high-temperature superconductors.

Cosine (Cobalt Silicide Growth Through Nitrogen-Induced Epitaxy) Process For Epitaxial Cobalt Silicide Formation For High Performance Sha

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lim, Chong Wee; Shin, Chan Soo; Gall, Daniel

A method for forming an epitaxial cobalt silicide layer on a MOS device includes sputter depositing cobalt in an ambient to form a first layer of cobalt suicide on a gate and source/drain regions of the MOS device. Subsequently, cobalt is sputter deposited again in an ambient of argon to increase the thickness of the cobalt silicide layer to a second thickness.

Laterally Overgrown Structures as Substrates for Lattice Mismatched Epitaxy

DTIC Science & Technology

2002-06-03

low supersaturation substrate [3]. Therefore, equilibrium growth techniques as liquid buffer with TD phase epitaxy (LPE) or vapour phase epitaxy (VPE...phase diffusion during MBE growth, so lateral over- low cost semiconductor devices. Therefore, vapour growth must rely on the surface mobility of...is replaced by graphite film not wetted For the GaAs on GaAs ELO system we attributed by the gallium melt [35]. Similarly, tungsten has been broadening

Ultra-Low Threshold Vertical-Cavity Surface-Emitting Lasers for USAF Applications

DTIC Science & Technology

2005-01-01

molecular beam epitaxy , semiconductors, finite element method, modeling and simulation, oxidation furnace 16. SECURITY CLASSIFICATION OF: 19a. NAME OF...Patterson Air Force Base). Device material growth was accomplished by means of molecular beam epitaxy (MBE) using a Varian GENII MBE system owned by the...grown by molecular beam epitaxy on a GaAs substrate. Vertical posts, with square and circular cross sections ranging in size from 5 to 40 microns

Nitrogen Plasma Optimization for High-Quality Dilute Nitrides

DTIC Science & Technology

2005-02-01

Available online 1 February 2005Abstract Growth of GaInNAs by molecular beam epitaxy (MBE) generally requires a nitrogen plasma, which complicates growth...InGaAs and InGaAsP lasers. This paper addresses several of the challenges of plasma-assisted molecular beam epitaxy (MBE) of high-quality dilute nitrides...A.L. Holmes, Using beam flux monitor as Langmuir probe for plasma-assisted molecular beam epitaxy , J. Vac. Sci. Technol. B, in press.

Suppressing the cellular breakdown in silicon supersaturated with titanium

NASA Astrophysics Data System (ADS)

Liu, Fang; Prucnal, S.; Hübner, R.; Yuan, Ye; Skorupa, W.; Helm, M.; Zhou, Shengqiang

2016-06-01

Hyper doping Si with up to 6 at.% Ti in solid solution was performed by ion implantation followed by pulsed laser annealing and flash lamp annealing. In both cases, the implanted Si layer can be well recrystallized by liquid phase epitaxy and solid phase epitaxy, respectively. Cross-sectional transmission electron microscopy of Ti-implanted Si after liquid phase epitaxy shows the so-called growth interface breakdown or cellular breakdown owing to the occurrence of constitutional supercooling in the melt. The appearance of cellular breakdown prevents further recrystallization. However, the out-diffusion and cellular breakdown can be effectively suppressed by solid phase epitaxy during flash lamp annealing due to the high velocity of amorphous-crystalline interface and the low diffusion velocity for Ti in the solid phase.

Calculation of electron spectra and some problems in the thermodynamics of graphene layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alisultanov, Z. Z., E-mail: zaur0102@gmail.com

The expressions for the energy spectra of monolayer, bilayer, and multilayer graphene, as well as epitaxial graphene, are derived using the quantum Green’s functions method. Analytic expressions are obtained for the densities of states of these systems. It is shown that a bandgap can appear the spectrum of an epitaxial graphene bilayer. A number of problems in the thermodynamics of electrons in free and epitaxial graphene layers are considered as applications. Analytic expressions are obtained for the chemical potential and heat capacity in the limiting cases of low and high temperatures. Quantum oscillations of heat capacity in graphene are analyzedmore » taking into account the Coulomb interaction. The Berry phase of epitaxial graphene is investigated.« less

Commercial aspects of epitaxial thin film growth in outer space

NASA Technical Reports Server (NTRS)

Ignatiev, Alex; Chu, C. W.

1988-01-01

A new concept for materials processing in space exploits the ultra vacuum component of space for thin film epitaxial growth. The unique low earth orbit space environment is expected to yield 10 to the -14th torr or better pressures, semiinfinite pumping speeds and large ultra vacuum volume (about 100 cu m) without walls. These space ultra vacuum properties promise major improvement in the quality, unique nature, and the throughput of epitaxially grown materials especially in the area of semiconductors for microelectronics use. For such thin film materials there is expected a very large value added from space ultra vacuum processing, and as a result the application of the epitaxial thin film growth technology to space could lead to major commercial efforts in space.

Process stability and morphology optimization of very thick 4H-SiC epitaxial layers grown by chloride-based CVD

NASA Astrophysics Data System (ADS)

Yazdanfar, M.; Stenberg, P.; Booker, I. D.; Ivanov, I. G.; Kordina, O.; Pedersen, H.; Janzén, E.

2013-10-01

The development of a chemical vapor deposition (CVD) process for very thick silicon carbide (SiC) epitaxial layers suitable for high power devices is demonstrated by epitaxial growth of 200 μm thick, low doped 4H-SiC layers with excellent morphology at growth rates exceeding 100 μm/h. The process development was done in a hot wall CVD reactor without rotation using both SiCl4 and SiH4+HCl precursor approaches to chloride based growth chemistry. A C/Si ratio <1 and an optimized in-situ etch are shown to be the key parameters to achieve 200 μm thick, low doped epitaxial layers with excellent morphology.

Low-Angle-Incidence Microchannel Epitaxy of a-Plane GaN Grown by Ammonia-Based Metal-Organic Molecular Beam Epitaxy

NASA Astrophysics Data System (ADS)

Lin, Chia-Hung; Uchiyama, Shota; Maruyama, Takahiro; Naritsuka, Shigeya

2012-04-01

Low-angle-incidence microchannel epitaxy (LAIMCE) of a-plane GaN was performed using ammonia-based metal-organic molecular beam epitaxy to obtain wide and thin lateral overgrowth over a SiO2 mask. Trimethylgallium (TMG) was supplied perpendicular to the openings cut in the mask with a low incident angle of 5° relative to the substrate plane. The [NH3]/[TMG] ratio (R) dependence of GaN LAIMCE was optimized by varying R from 5 to 30. A wide lateral overgrowth of 3.7 µm with a dislocation density below the transmission electron microscope detection limit was obtained at R=15 for a thickness of 520 nm.

Electron mobility enhancement in epitaxial multilayer Si-Si/1-x/Ge/x/ alloy films on /100/Si

NASA Technical Reports Server (NTRS)

Manasevit, H. M.; Gergis, I. S.; Jones, A. B.

1982-01-01

Enhanced Hall-effect mobilities have been measured in epitaxial (100)-oriented multilayer n-type Si/Si(1-x)Ge(x) films grown on single-crystal Si substrates by chemical vapor deposition. Mobilities from 20 to 40% higher than that of epitaxial Si layers and about 100% higher than that of epitaxial SiGe layers on Si were measured for the doping range 8 x 10 to the 15th to 10 to the 17th/cu cm. No mobility enhancement was observed in multilayer p-type (100) films and n-type (111)-oriented films. Experimental studies included the effects upon film properties of layer composition, total film thickness, doping concentrations, layer thickness, and growth temperature.

Performance of epitaxial back surface field cells

NASA Technical Reports Server (NTRS)

Brandhorst, H. W., Jr.; Baraona, C. R.; Swartz, C. K.

1973-01-01

Epitaxial back surface field structures were formed by depositing a 10 micron thick 10 Omega-cm epitaxial silicon layer onto substrates with resistivities of 0.01, 0.1, 1.0 and 10 Omega-cm. A correlation between cell open-circuit voltage and substrate resistivity was observed and was compared to theory. The cells were also irradiated with 1 MeV electrons to a fluence of 5 X 10 to the 15th power e/cm2. The decrease of cell open-circuit voltage was in excellent agreement with theoretical predictions and the measured short circuit currents were within 2% of the prediction. Calculations are presented of optimum cell performance as functions of epitaxial layer thickness, radiation fluence and substrate diffusion length.

A Study of the Crystal Structure of Co40Fe40B20 Epitaxial Films on a Bi2Te3 Topological Insulator

NASA Astrophysics Data System (ADS)

Kaveev, A. K.; Suturin, S. M.; Sokolov, N. S.; Kokh, K. A.; Tereshchenko, O. E.

2018-03-01

Laser molecular-beam epitaxy has been used to form Co40Fe40B20 layers on Bi2Te3 topological insulator substrates, and their growth conditions have been studied. The possibility of growing epitaxial ferromagnetic layers on the surface of a topological insulator is demonstrated for the first time. The CoFeB layers have a body-centered cubic crystal structure with the (111) crystal plane parallel to the (0001) plane of Bi2Te3. 3D mapping in the reciprocal space of high-energy electron-diffraction patterns made it possible to determine the epitaxial relationships between the film and the substrate.

JSEP fellowship

NASA Astrophysics Data System (ADS)

Goodman, Alvin M.; Powers, Edward J.

1993-06-01

In this dissertation, the precision of molecular-beam epitaxy (MBE) is taken advantage of in order to grow semiconductor reflectors, microcavities, and quantum wells for studies of vertical-cavity surface-emitting lasers (VCSEL's) and the coupling between reflectors and the spatially localized dipoles of semiconductor quantum wells. The design of the structures and the choice of epitaxial growth parameters used for the structures are discussed in detail. Experimental techniques and results are discussed which relate to studies that advance the optoelectronics technology and our understanding of fundamental physics. MBE is used to grow epitaxial structures in which a QW is precisely placed either in close proximity to a DBR, or near the surface of the epitaxial layer, so that a highly reflective mirror can be placed in close proximity to the QW.

Ultra-low temperature (≤300 °C) growth of Ge-rich SiGe by solid-liquid-coexisting annealing of a-GeSn/c-Si structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sadoh, Taizoh, E-mail: sadoh@ed.kyushu-u.ac.jp; Chikita, Hironori; Miyao, Masanobu

2015-09-07

Ultra-low temperature (≤300 °C) growth of Ge-rich SiGe on Si substrates is strongly desired to realize advanced electronic and optical devices, which can be merged onto Si large-scale integrated circuits (LSI). To achieve this, annealing characteristics of a-GeSn/c-Si structures are investigated under wide ranges of the initial Sn concentrations (0%–26%) and annealing conditions (300–1000 °C, 1 s–48 h). Epitaxial growth triggered by SiGe mixing is observed after annealing, where the annealing temperatures necessary for epitaxial growth significantly decrease with increasing initial Sn concentration and/or annealing time. As a result, Ge-rich (∼80%) SiGe layers with Sn concentrations of ∼2% are realized by ultra-low temperature annealingmore » (300 °C, 48 h) for a sample with the initial Sn concentration of 26%. The annealing temperature (300 °C) is in the solid-liquid coexisting temperature region of the phase diagram for Ge-Sn system. From detailed analysis of crystallization characteristics and composition profiles in grown layers, it is suggested that SiGe mixing is generated by a liquid-phase reaction even at ultra-low temperatures far below the melting temperature of a-GeSn. This ultra-low-temperature growth technique of Ge-rich SiGe on Si substrates is expected to be useful to realize next-generation LSI, where various multi-functional devices are integrated on Si substrates.« less

GaSb-based single-mode distributed feedback lasers for sensing (Conference Presentation)

NASA Astrophysics Data System (ADS)

Gupta, James A.; Bezinger, Andrew; Lapointe, Jean; Poitras, Daniel; Aers, Geof C.

2017-02-01

GaSb-based tunable single-mode diode lasers can enable rapid, highly-selective and highly-sensitive absorption spectroscopy systems for gas sensing. In this work, single-mode distributed feedback (DFB) laser diodes were developed for the detection of various trace gases in the 2-3.3um range, including CO2, CO, HF, H2S, H2O and CH4. The lasers were fabricated using an index-coupled grating process without epitaxial regrowth, making the process significantly less expensive than conventional DFB fabrication. The devices are based on InGaAsSb/AlGaAsSb separate confinement heterostructures grown on GaSb by molecular beam epitaxy. DFB lasers were produced using a two step etch process. Narrow ridge waveguides were first defined by optical lithography and etched into the semiconductor. Lateral gratings were then defined on both sides of the ridge using electron-beam lithography and etched to produce the index-grating. Effective index modeling was used to optimize the ridge width, etch depths and the grating pitch to ensure single-lateral-mode operation and adequate coupling strength. The effective index method was further used to simulate the DFB laser emission spectrum, based on a transfer matrix model for light transmission through the periodic structure. The fabricated lasers exhibit single-mode operation which is tunable through the absorption features of the various target gases by adjustment of the drive current. In addition to the established open-path sensing applications, these devices have great potential for optoelectronic integrated gas sensors, making use of integrated photodetectors and possibly on-chip Si photonics waveguide structures.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baker, A. A.; Hesjedal, T.; Diamond Light Source, Didcot OX11 0DE

We present a miniaturized molecular beam epitaxy (miniMBE) system with an outer diameter of 206 mm, optimized for flexible and high-throughput operation. The three-chamber system, used here for oxide growth, consists of a sample loading chamber, a storage chamber, and a growth chamber. The growth chamber is equipped with eight identical effusion cell ports with linear shutters, one larger port for either a multi-pocket electron beam evaporator or an oxygen plasma source, an integrated cryoshroud, retractable beam-flux monitor or quartz-crystal microbalance, reflection high energy electron diffraction, substrate manipulator, main shutter, and quadrupole mass spectrometer. The system can be combined withmore » ultrahigh vacuum (UHV) end stations on synchrotron and neutron beamlines, or equivalently with other complex surface analysis systems, including low-temperature scanning probe microscopy systems. Substrate handling is compatible with most UHV surface characterization systems, as the miniMBE can accommodate standard surface science sample holders. We introduce the design of the system, and its specific capabilities and operational parameters, and we demonstrate the epitaxial thin film growth of magnetoelectric Cr{sub 2}O{sub 3} on c-plane sapphire and ferrimagnetic Fe{sub 3}O{sub 4} on MgO (001)« less

Gibbs–Thomson Effect in Planar Nanowires: Orientation and Doping Modulated Growth

DOE PAGES

Shen, Youde; Chen, Renjie; Yu, Xuechao; ...

2016-06-02

Epitaxy-enabled bottom-up synthesis of self-assembled planar nanowires via the vapor–liquid–solid mechanism is an emerging and promising approach toward large-scale direct integration of nanowire-based devices without postgrowth alignment. In this paper, by examining large assemblies of indium tin oxide nanowires on yttria-stabilized zirconia substrate, we demonstrate for the first time that the growth dynamics of planar nanowires follows a modified version of the Gibbs–Thomson mechanism, which has been known for the past decades to govern the correlations between thermodynamic supersaturation, growth speed, and nanowire morphology. Furthermore, the substrate orientation strongly influences the growth characteristics of epitaxial planar nanowires as opposed tomore » impact at only the initial nucleation stage in the growth of vertical nanowires. The rich nanowire morphology can be described by a surface-energy-dependent growth model within the Gibbs–Thomson framework, which is further modulated by the tin doping concentration. Our experiments also reveal that the cutoff nanowire diameter depends on the substrate orientation and decreases with increasing tin doping concentration. Finally, these results enable a deeper understanding and control over the growth of planar nanowires, and the insights will help advance the fabrication of self-assembled nanowire devices.« less

Gibbs-Thomson Effect in Planar Nanowires: Orientation and Doping Modulated Growth.

PubMed

Shen, Youde; Chen, Renjie; Yu, Xuechao; Wang, Qijie; Jungjohann, Katherine L; Dayeh, Shadi A; Wu, Tom

2016-07-13

Epitaxy-enabled bottom-up synthesis of self-assembled planar nanowires via the vapor-liquid-solid mechanism is an emerging and promising approach toward large-scale direct integration of nanowire-based devices without postgrowth alignment. Here, by examining large assemblies of indium tin oxide nanowires on yttria-stabilized zirconia substrate, we demonstrate for the first time that the growth dynamics of planar nanowires follows a modified version of the Gibbs-Thomson mechanism, which has been known for the past decades to govern the correlations between thermodynamic supersaturation, growth speed, and nanowire morphology. Furthermore, the substrate orientation strongly influences the growth characteristics of epitaxial planar nanowires as opposed to impact at only the initial nucleation stage in the growth of vertical nanowires. The rich nanowire morphology can be described by a surface-energy-dependent growth model within the Gibbs-Thomson framework, which is further modulated by the tin doping concentration. Our experiments also reveal that the cutoff nanowire diameter depends on the substrate orientation and decreases with increasing tin doping concentration. These results enable a deeper understanding and control over the growth of planar nanowires, and the insights will help advance the fabrication of self-assembled nanowire devices.

Electronic Interfacial Effects in Epitaxial Heterostructures based on LaMnO3.

NASA Astrophysics Data System (ADS)

Christen, Hans M.; Varela, M.; Lee, H. N.; Kim, D. H.; Chisholm, M. F.; Cantoni, C.; Petit, L.; Schulthess, T. C.; Lowndes, D. H.

2006-03-01

Studies of chemically abrupt interfaces provide an ideal platform to study the effects of discontinuities and asymmetries of the electronic configuration on the transport and magnetic properties of complex oxides. In addition, the behavior of complex materials near interfaces plays the most crucial role not only in devices and nanostructures but also in complex structures in the form of composites and superlattices, including artificial multiferroics. Interfaces in the ABO3 perovskite system are particularly attractive because structurally similar oxides with fundamentally different physical properties can be integrated epitaxially. To explore the electronic effects at interfaces and to probe the physical properties that result from local electronic changes, we have synthesized structures containing LaMnO3 and insulating perovskites using pulsed laser deposition. The local electron energy loss spectroscopy (EELS) capability of a scanning transmission electron microscope (STEM) is used to probe the electronic configuration in the LaMnO3 films as a function of the distance from the interfaces. The results are compared to macroscopic measurements and theoretical predictions. Research sponsored by the U.S. Department of Energy under contract DE-AC05-00OR22725 with the Oak Ridge National Laboratory, managed by UT-Battelle, LLC.

Influence of growth conditions and surface reaction byproducts on GaN grown via metal organic molecular beam epitaxy: Toward an understanding of surface reaction chemistry

NASA Astrophysics Data System (ADS)

Pritchett, David; Henderson, Walter; Burnham, Shawn D.; Doolittle, W. Alan

2006-04-01

The surface reaction byproducts during the growth of GaN films via metal organic molecular beam epitaxy (MOMBE) were investigated as a means to optimize material properties. Ethylene and ethane were identified as the dominant surface reaction hydrocarbon byproducts, averaging 27.63% and 7.15% of the total gas content present during growth. Intense ultraviolet (UV) photoexcitation during growth was found to significantly increase the abundance of ethylene and ethane while reducing the presence of H2 and N2. At 920°C, UV excitation was shown to enhance growth rate and crystalline quality while reducing carbon incorporation. Over a limited growth condition range, a 4.5×1019-3.4×1020 cm-3 variation in carbon incorporation was achieved at constant high vacuum. Coupled with growth rate gains, UV excitation yielded films with ˜58% less integrated carbon content. Structural material property variations are reported for various ammonia flows and growth temperatures. The results suggest that high carbon incorporation can be achieved and regulated during MOMBE growth and that in-situ optimization through hydrocarbon analysis may provide further enhancement in the allowable carbon concentration range.

Electronic Structure, Surface Doping, and Optical Response in Epitaxial WSe2 Thin Films.

PubMed

Zhang, Yi; Ugeda, Miguel M; Jin, Chenhao; Shi, Su-Fei; Bradley, Aaron J; Martín-Recio, Ana; Ryu, Hyejin; Kim, Jonghwan; Tang, Shujie; Kim, Yeongkwan; Zhou, Bo; Hwang, Choongyu; Chen, Yulin; Wang, Feng; Crommie, Michael F; Hussain, Zahid; Shen, Zhi-Xun; Mo, Sung-Kwan

2016-04-13

High quality WSe2 films have been grown on bilayer graphene (BLG) with layer-by-layer control of thickness using molecular beam epitaxy. The combination of angle-resolved photoemission, scanning tunneling microscopy/spectroscopy, and optical absorption measurements reveal the atomic and electronic structures evolution and optical response of WSe2/BLG. We observe that a bilayer of WSe2 is a direct bandgap semiconductor, when integrated in a BLG-based heterostructure, thus shifting the direct-indirect band gap crossover to trilayer WSe2. In the monolayer limit, WSe2 shows a spin-splitting of 475 meV in the valence band at the K point, the largest value observed among all the MX2 (M = Mo, W; X = S, Se) materials. The exciton binding energy of monolayer-WSe2/BLG is found to be 0.21 eV, a value that is orders of magnitude larger than that of conventional three-dimensional semiconductors, yet small as compared to other two-dimensional transition metal dichalcogennides (TMDCs) semiconductors. Finally, our finding regarding the overall modification of the electronic structure by an alkali metal surface electron doping opens a route to further control the electronic properties of TMDCs.

Fabrication of high-quality single-crystal Cu thin films using radio-frequency sputtering.

PubMed

Lee, Seunghun; Kim, Ji Young; Lee, Tae-Woo; Kim, Won-Kyung; Kim, Bum-Su; Park, Ji Hun; Bae, Jong-Seong; Cho, Yong Chan; Kim, Jungdae; Oh, Min-Wook; Hwang, Cheol Seong; Jeong, Se-Young

2014-08-29

Copper (Cu) thin films have been widely used as electrodes and interconnection wires in integrated electronic circuits, and more recently as substrates for the synthesis of graphene. However, the ultra-high vacuum processes required for high-quality Cu film fabrication, such as molecular beam epitaxy (MBE), restricts mass production with low cost. In this work, we demonstrated high-quality Cu thin films using a single-crystal Cu target and radio-frequency (RF) sputtering technique; the resulting film quality was comparable to that produced using MBE, even under unfavorable conditions for pure Cu film growth. The Cu thin film was epitaxially grown on an Al2O3 (sapphire) (0001) substrate, and had high crystalline orientation along the (111) direction. Despite the 10(-3) Pa vacuum conditions, the resulting thin film was oxygen free due to the high chemical stability of the sputtered specimen from a single-crystal target; moreover, the deposited film had >5× higher adhesion force than that produced using a polycrystalline target. This fabrication method enabled Cu films to be obtained using a simple, manufacturing-friendly process on a large-area substrate, making our findings relevant for industrial applications.

Electronic structure, surface doping, and optical response in epitaxial WSe 2 thin films

DOE PAGES

Zhang, Yi; Ugeda, Miguel M.; Jin, Chenhao; ...

2016-03-14

High quality WSe 2 films have been grown on bilayer graphene (BLG) with layer-by-layer control of thickness using molecular beam epitaxy. The combination of angle-resolved photoemission, scanning tunneling microscopy/spectroscopy, and optical absorption measurements reveal the atomic and electronic structures evolution and optical response of WSe 2/BLG. We observe that a bilayer of WSe 2 is a direct bandgap semiconductor, when integrated in a BLG-based heterostructure, thus shifting the direct–indirect band gap crossover to trilayer WSe 2. In the monolayer limit, WSe 2 shows a spin-splitting of 475 meV in the valence band at the K point, the largest value observedmore » among all the MX 2 (M = Mo, W; X = S, Se) materials. The exciton binding energy of monolayer-WSe 2/BLG is found to be 0.21 eV, a value that is orders of magnitude larger than that of conventional three-dimensional semiconductors, yet small as compared to other two-dimensional transition metal dichalcogennides (TMDCs) semiconductors. Lastly, our finding regarding the overall modification of the electronic structure by an alkali metal surface electron doping opens a route to further control the electronic properties of TMDCs.« less

GaN-on-Silicon - Present capabilities and future directions

NASA Astrophysics Data System (ADS)

Boles, Timothy

2018-02-01

Gallium Nitride, in the form of epitaxial HEMT transistors on various substrate materials, is the newest and most promising semiconductor technology for high performance devices in the RF, microwave, and mmW arenas. This is particularly true for GaN-on-Silicon based devices and MMIC's which enable both state-of-the-art high frequency functionality and the ability to scale production into large wafer diameter CMOS foundries. The design and development of GaN-on-Silicon structures and devices will be presented beginning with the basic material parameters, growth of the required epitaxial construction, and leading to the fundamental operational theory of high frequency, high power HEMTs. In this discussion comparisons will be made with alternative substrate materials with emphasis on contrasting the inherent advantages of a silicon based system. Theory of operation of microwave and mmW high power HEMT devices will be presented with special emphasis on fundamental limitations of device performance including inherent frequency limiting transit time analysis, required impedance transformations, internal and external parasitic reactance, thermal impedance optimization, and challenges improved by full integration into monolithic MMICs. Lastly, future directions for implementing GaN-on-Silicon into mainstream CMOS silicon semiconductor technologies will be discussed.

Effect of Sb in thick InGaAsSbN layers grown by liquid phase epitaxy

NASA Astrophysics Data System (ADS)

Donchev, V.; Milanova, M.; Asenova, I.; Shtinkov, N.; Alonso-Álvarez, D.; Mellor, A.; Karmakov, Y.; Georgiev, S.; Ekins-Daukes, N.

2018-02-01

Dilute nitride InGaAsSbN layers grown by low-temperature liquid phase epitaxy are studied in comparison with quaternary InGaAsN layers grown at the same growth conditions to understand the effect of Sb in the alloy. The lattice mismatch to the GaAs substrate is found to be slightly larger for the InGaAsSbN layers, which is explained by the large atomic radius of Sb. A reduction of the band gap energy with respect to InGaAsN is demonstrated by means of photoluminescence (PL), surface photovoltage (SPV) spectroscopy and tight-binding calculations. The band-gap energies determined from PL and ellipsometry measurements are in good agreement, while the SPV spectroscopy and the tight-binding calculations provide lower values. Possible reasons for these discrepancies are discussed. The PL spectra reveal localized electronic states in the band gap near the conduction band edge, which is confirmed by SPV spectroscopy. The analysis of the power dependence of the integrated PL has allowed determining the dominant radiative recombination mechanisms in the layers. The values of the refraction index in a wide spectral region are found to be higher for the Sb containing layers.

11.72-sq cm Active-Area Wafer Interconnected PiN Diode Pulsed at 64 kA Dissipates 382 J and Exhibits an Action of 1.7 MA(sup 2)-s

DTIC Science & Technology

2012-01-30

calculated action exceeded 1.7 MA2 -s. Preliminary efforts on high voltage diode interconnection have produced quarter wafer interconnected PiN...was packaged in a “hockey-puck” configuration and pulsed to 64 kA, dissipating 382 J with a calculated action exceeding 1.7 MA2 -s. II. FULL...epitaxial layers are utilized. 11.72-cm2 Active-area Wafer Interconnected PiN Diode pulsed at 64 kA dissipates 382 J and exhibits an action of 1.7 MA2 -s

Breaking the GaN material limits with nanoscale vertical polarisation super junction structures: A simulation analysis

NASA Astrophysics Data System (ADS)

Unni, Vineet; Sankara Narayanan, E. M.

2017-04-01

This is the first report on the numerical analysis of the performance of nanoscale vertical superjunction structures based on impurity doping and an innovative approach that utilizes the polarisation properties inherent in III-V nitride semiconductors. Such nanoscale vertical polarisation super junction structures can be realized by employing a combination of epitaxial growth along the non-polar crystallographic axes of Wurtzite GaN and nanolithography-based processing techniques. Detailed numerical simulations clearly highlight the limitations of a doping based approach and the advantages of the proposed solution for breaking the unipolar one-dimensional material limits of GaN by orders of magnitude.

Microgravity

NASA Image and Video Library

1999-11-10

Space Vacuum Epitaxy Center works with industry and government laboratories to develop advanced thin film materials and devices by utilizing the most abundant free resource in orbit: the vacuum of space. SVEC, along with its affiliates, is developing semiconductor mid-IR lasers for environmental sensing and defense applications, high efficiency solar cells for space satellite applications, oxide thin films for computer memory applications, and ultra-hard thin film coatings for wear resistance in micro devices. Performance of these vacuum deposited thin film materials and devices can be enhanced by using the ultra-vacuum of space for which SVEC has developed the Wake Shield Facility---a free flying research platform dedicated to thin film materials development in space.

Microgravity

NASA Image and Video Library

2000-11-10

Space Vacuum Epitaxy Center works with industry and government laboratories to develop advanced thin film materials and devices by utilizing the most abundant free resource in orbit: the vacuum of space. SVEC, along with its affiliates, is developing semiconductor mid-IR lasers for environmental sensing and defense applications, high efficiency solar cells for space satellite applications, oxide thin films for computer memory applications, and ultra-hard thin film coatings for wear resistance in micro devices. Performance of these vacuum deposited thin film materials and devices can be enhanced by using the ultra-vacuum of space for which SVEC has developed the Wake Shield Facility---a free flying research platform dedicated to thin film materials development in space.