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Sample records for epitaxial orthorhombic ymno3

  1. Orbital Reconstruction Enhanced Exchange Bias in La0.6Sr0.4MnO3/Orthorhombic YMnO3 Heterostructures

    PubMed Central

    Zheng, Dongxing; Jin, Chao; Li, Peng; Wang, Liyan; Feng, Liefeng; Mi, Wenbo; Bai, Haili

    2016-01-01

    The exchange bias in ferromagnetic/multiferroic heterostructures is usually considered to originate from interfacial coupling. In this work, an orbital reconstruction enhanced exchange bias was discovered. As La0.6Sr0.4MnO3 (LSMO) grown on YMnO3 (YMO) suffers a tensile strain (a > c), the doubly degenerate eg orbital splits into high energy 3z2 − r2 and low energy x2 − y2 orbitals, which makes electrons occupy the localized x2 − y2 orbital and leads to the formation of antiferromagnetic phase in LSMO. The orbital reconstruction induced antiferromagnetic phase enhances the exchange bias in the LSMO/YMO heterostructures, lightening an effective way for electric-field modulated magnetic moments in multiferroic magnetoelectric devices. PMID:27090614

  2. Orbital Reconstruction Enhanced Exchange Bias in La0.6Sr0.4MnO3/Orthorhombic YMnO3 Heterostructures

    NASA Astrophysics Data System (ADS)

    Zheng, Dongxing; Jin, Chao; Li, Peng; Wang, Liyan; Feng, Liefeng; Mi, Wenbo; Bai, Haili

    2016-04-01

    The exchange bias in ferromagnetic/multiferroic heterostructures is usually considered to originate from interfacial coupling. In this work, an orbital reconstruction enhanced exchange bias was discovered. As La0.6Sr0.4MnO3 (LSMO) grown on YMnO3 (YMO) suffers a tensile strain (a > c), the doubly degenerate eg orbital splits into high energy 3z2 ‑ r2 and low energy x2 ‑ y2 orbitals, which makes electrons occupy the localized x2 ‑ y2 orbital and leads to the formation of antiferromagnetic phase in LSMO. The orbital reconstruction induced antiferromagnetic phase enhances the exchange bias in the LSMO/YMO heterostructures, lightening an effective way for electric-field modulated magnetic moments in multiferroic magnetoelectric devices.

  3. Synthesis, structure and magnetic properties of nanocrystalline YMnO3.

    PubMed

    Bergum, Kristin; Okamoto, Hiroshi; Fjellvåg, Helmer; Grande, Tor; Einarsrud, Mari-Ann; Selbach, Sverre M

    2011-08-01

    Nanocrystalline YMnO(3) has been prepared by wet chemical synthesis routes to obtain crystallites with sizes from 20 nm to bulk material. The crystal structure of hexagonal YMnO(3) nanocrystallites smaller than 80 nm deviates from bulk material in terms of unit cell distortion and unit cell volume. The ferrielectric displacements of Y(3+) cations along the polar c-axis decays progressively with decreasing size below 100 nm. Indications of weak ferromagnetism in the form of a narrow hysteresis loop and enhanced magnetic susceptibility below 43 K in 20 nm YMnO(3) nanoparticles is attributed to extrinsic effects. Low-temperature annealing of the 20 nm crystallites in an oxidizing atmosphere removed all traces of ferromagnetism, showing that this is not a size-induced property. Finally, formation of the competing metastable orthorhombic phase and the thermodynamically stable hexagonal phase is discussed with respect to oxidizing or reducing conditions during synthesis.

  4. Columnar epitaxy of hexagonal and orthorhombic silicides on Si(111)

    NASA Technical Reports Server (NTRS)

    Fathauer, R. W.; Nieh, C. W.; Xiao, Q. F.; Hashimoto, Shin

    1990-01-01

    Columnar grains of PtSi and CrSi2 surrounded by high-quality epitaxial silicon are obtained by ultrahigh vacuum codeposition of Si and metal in an approximately 10:1 ratio on Si(111) substrates heated to 610-840 C. This result is similar to that found previously for CoSi2 (a nearly-lattice-matched cubic-fluorite crystal) on Si(111), in spite of the respective orthorhombic and hexagonal structures of PtSi and CrSi2. The PtSi grains are epitaxial and have one of three variants of the relation defined by PtSi(010)/Si(111), with PtSi 001 line/Si 110 line type.

  5. Ferromagnetic interactions in chromium (III) doped YMnO3

    NASA Astrophysics Data System (ADS)

    Thakur, Rajesh K.; Thakur, Rasna; Kaurav, N.; Okram, G. S.; Gaur, N. K.

    2016-05-01

    Both of the reported compounds with compositions YMn1-xCrxO3 (x = 0.1 and 0.2) are synthesized by using the conventional solid state reaction method and their magnetic properties are analyzed vigilantly. The XRD pattern reveals the hexagonal structure of the reported compounds with space group P63cm (25-1079). The in-depth analysis of the magnetic measurements reveals the enhancement in the ferromagnetic character with Cr doping in YMnO3 compounds. The observed enhancement in the ferromagnetism is found to be due to the increased double exchange interactions among the Cr3+ and Mn3+ ions with Cr doping.

  6. Growth of epitaxial orthorhombic YO1.5-substituted HfO2 thin film

    NASA Astrophysics Data System (ADS)

    Shimizu, Takao; Katayama, Kiliha; Kiguchi, Takanori; Akama, Akihiro; Konno, Toyohiko J.; Funakubo, Hiroshi

    2015-07-01

    YO1.5-substituted HfO2 thin films with various substitution amounts were grown on (100) YSZ substrates by the pulsed laser deposition method directly from the vapor phase. The epitaxial growth of film with different YO1.5 amounts was confirmed by the X-ray diffraction method. Wide-area reciprocal lattice mapping measurements were performed to clarify the crystal symmetry of films. The formed phases changed from low-symmetry monoclinic baddeleyite to high-symmetry tetragonal/cubic fluorite phases through an orthorhombic phase as the YO1.5 amount increased from 0 to 0.15. The additional annular bright-field scanning transmission electron microscopy indicates that the orthorhombic phase has polar structure. This means that the direct growth by vapor is of polar orthorhombic HfO2-based film. Moreover, high-temperature X-ray diffraction measurements showed that the film with a YO1.5 amount of 0.07 with orthorhombic structure at room temperature only exhibited a structural phase transition to tetragonal phase above 450 °C. This temperature is much higher than the reported maximum temperature of 200 °C to obtain ferroelectricity as well as the expected temperature for real device application. The growth of epitaxial orthorhombic HfO2-based film helps clarify the nature of ferroelectricity in HfO2-based films (186 words/200 words).

  7. Unusual ferromagnetic YMnO3 phase in YMnO3/La2 / 3Sr1 / 3MnO3 heterostructures

    NASA Astrophysics Data System (ADS)

    Autieri, Carmine; Sanyal, Biplab

    2014-11-01

    By means of first-principles density functional calculations, we study the structural, magnetic and electronic properties of YMnO3/L{{a}2/3}S{{r}1/3}MnO3 heterostructures. Although in the bulk the ground state of YMnO3 is an antiferromagnet, the YMnO3/L{{a}2/3}S{{r}1/3}MnO3 heterostructure stabilizes the ferromagnetic (FM) phase in YMnO3 in the interface region over a wide range of Coulomb repulsion parameters. The hypothetical FM phase of bulk YMnO3 is dielectric and due to substantial differences between the lattice constants in the ab plane, a strong magnetocrystalline anisotropy is present. This anisotropy produces a high coercivity of the unusual FM YMnO3 that can explain the large vertical shift in the hysteresis loops observed in recent experiments (Paul et al 2014 J. Appl. Crystallogr. 47 1054). The correlation between weak exchange bias and the vertical shift is proposed, which calls for reinvestigation of various systems showing vertical shifts.

  8. Atomistic simulation study of transverse domain wall in hexagonal YMnO3

    NASA Astrophysics Data System (ADS)

    Jiang, Ning; Zhang, X.

    2015-11-01

    Using atomistic simulation method, we developed a set of interatomic potential parameters which accurately reproduced the complex atomic structure of multiferroic hexagonal manganite YMnO3. We then demonstrated a systematic study of intrinsic defects, and the fine atomic configurations and local structural distortions of two types of transverse domain wall. Moreover, the energy and structure details of transverse domain walls in oxygen deficient YMnO3 were revealed. Insights into the conductance enhancement was obtained. The present study sheds light on the understanding of structure-property relation in YMnO3.

  9. Growth of epitaxial orthorhombic YO{sub 1.5}-substituted HfO{sub 2} thin film

    SciTech Connect

    Shimizu, Takao; Katayama, Kiliha; Kiguchi, Takanori; Akama, Akihiro; Konno, Toyohiko J.; Funakubo, Hiroshi

    2015-07-20

    YO{sub 1.5}-substituted HfO{sub 2} thin films with various substitution amounts were grown on (100) YSZ substrates by the pulsed laser deposition method directly from the vapor phase. The epitaxial growth of film with different YO{sub 1.5} amounts was confirmed by the X-ray diffraction method. Wide-area reciprocal lattice mapping measurements were performed to clarify the crystal symmetry of films. The formed phases changed from low-symmetry monoclinic baddeleyite to high-symmetry tetragonal/cubic fluorite phases through an orthorhombic phase as the YO{sub 1.5} amount increased from 0 to 0.15. The additional annular bright-field scanning transmission electron microscopy indicates that the orthorhombic phase has polar structure. This means that the direct growth by vapor is of polar orthorhombic HfO{sub 2}-based film. Moreover, high-temperature X-ray diffraction measurements showed that the film with a YO{sub 1.5} amount of 0.07 with orthorhombic structure at room temperature only exhibited a structural phase transition to tetragonal phase above 450 °C. This temperature is much higher than the reported maximum temperature of 200 °C to obtain ferroelectricity as well as the expected temperature for real device application. The growth of epitaxial orthorhombic HfO{sub 2}-based film helps clarify the nature of ferroelectricity in HfO{sub 2}-based films (186 words/200 words)

  10. Orientation control and domain structure analysis of {100}-oriented epitaxial ferroelectric orthorhombic HfO2-based thin films

    NASA Astrophysics Data System (ADS)

    Katayama, Kiliha; Shimizu, Takao; Sakata, Osami; Shiraishi, Takahisa; Nakamura, Shogo; Kiguchi, Takanori; Akama, Akihiro; Konno, Toyohiko J.; Uchida, Hiroshi; Funakubo, Hiroshi

    2016-04-01

    Orientation control of {100}-oriented epitaxial orthorhombic 0.07YO1.5-0.93HfO2 films grown by pulsed laser deposition was investigated. To achieve in-plane lattice matching, indium tin oxide (ITO) and yttria-stabilized zirconia (YSZ) were selected as underlying layers. We obtained (100)- and (001)/(010)-oriented films on ITO and YSZ, respectively. Ferroelastic domain formation was confirmed for both films by X-ray diffraction using the superlattice diffraction that appeared only for the orthorhombic symmetry. The formation of ferroelastic domains is believed to be induced by the tetragonal-orthorhombic phase transition upon cooling the films after deposition. The present results demonstrate that the orientation of HfO2-based ferroelectric films can be controlled in the same manner as that of ferroelectric films composed of conventional perovskite-type material such as Pb(Zr, Ti)O3 and BiFeO3.

  11. Ferroelectric-ferromagnetic coupling in hexagonal YMnO3 film

    NASA Astrophysics Data System (ADS)

    Cheng, Shaobo; Li, Menglei; Deng, Shiqing; Bao, Shanyong; Tang, Peizhe; Duan, Wenhui; Ma, Jing; Nan, Cewen; Zhu, Jing

    Simultaneously achieving ferroelectricity and ferromagnetism in a single phase material is an important research topic in recent decades. Here, we demonstrate that with the modulation of oxygen vacancies, the ferroelectric-ferromagnetic coupling can be realized in the typical hexagonal manganite: YMnO3. The first-principal calculations are used to reveal the importance of oxygen vacancies on the alterations of magnetic behaviors for YMnO3. In order to obtain net magnetic moments, the on-top oxygen vacancies of MnO5 clusters should be created, thus the initial 2D spin frustration structure of Mn ions will be broken. By growing YMnO3 film on Al2O3 substrate, large in-plane compressive strain is induced, thus we can experimentally realize the on-top oxygen vacancies. With the help of SQUID and spherical aberration corrected TEM, the magnetic moments are experimentally measured and the correlations between the crystal structures and magnetic properties can be clearly understood. Our findings may pave a way for future applications of single phase multiferroic materials. National 973 Project of China (2015CB654902, 2011CB606405) and Chinese National Natural Science Foundation (11374174, 51390471).

  12. Bipolar resistive switching in YMnO3/Nb:SrTiO3 pn-heterojunctions

    NASA Astrophysics Data System (ADS)

    Bogusz, Agnieszka; Bürger, Danilo; Skorupa, Ilona; Schmidt, Oliver G.; Schmidt, Heidemarie

    2016-11-01

    Resistively switching oxides are promising materials for use in electronic applications such as nonvolatile memories, logic gates, and artificial synapses. This work presents the bipolar resistive switching (BRS) in YMnO3/Nb:SrTiO3 pn-heterojunctions. A thermally driven electroforming process is required prior to the observed BRS. Results indicate that the BRS in YMnO3/Nb:SrTiO3 originates from the combined effects of charge trapping and detrapping processes along with the electro-migration of charged point defects in the depletion layer of the pn-heterojunction. It is shown that the built-in voltage of the pn-heterojunctions can be tuned by the oxygen partial pressure during growth of the YMnO3 thin film and impacts the working parameters of the resistively switching cell. This study provides a guideline for material engineering of bipolar resistive switches based on pn-heterojunctions.

  13. Direct observation of multiferroic vortex domains in YMnO3.

    PubMed

    Zhang, Qinghua; Tan, Guotai; Gu, Lin; Yao, Yuan; Jin, Changqing; Wang, Yanguo; Duan, Xiaofeng; Yu, Richeng

    2013-01-01

    Topological vortices with swirling ferroelectric, magnetic and structural anti-phase relationship in hexagonal RMnO3 (R = Ho to Lu, Y, and Sc) have attracted much attention because of their intriguing behaviors. Herein, we report the structure of multiferroic vortex domains in YMnO3 at atomic scale using state-of-the-art aberration-corrected scanning transmission electron microscopy (STEM). Two types of displacements were identified among six domain walls (DWs); six translation-ferroelectric domains denoted by α+, γ-, β+, α-, γ+ and β-, respectively, were recognized, demonstrating the interlocking nature of the anti-vortex domain. We found that the anti-vortex core is about four unit cells wide. In addition, we reconstructed the vortex model with three swirling pairs of DWs along the [001] direction. These results are very critical for the understanding of topological behaviors and unusual properties of the multiferroic vortex.

  14. The effect of strontium doping on the structural and magnetic transition of YMnO3

    NASA Astrophysics Data System (ADS)

    Thakur, Rajesh K.; Thakur, Rasna; Awasthi, A. M.; Ganesan, V.; Gaur, N. K.

    2012-06-01

    A systematic study on the effect of strontium (Sr) doping in YMnO3 has been undertaken. Polycrystalline samples with composition Y1-xSrxMnO3 (x=0, 0.01) were synthesized by using high temperature solid state reaction method. The structural and thermal properties of the prepared samples have been carried out in the wide range of temperature. Our XRD reveals the single phase formation of the reported compounds in hexagonal structure with space group P63cm (JCPDS: 25-1079). The observed pointed kinks in the specific heat study are symptomatic of the probable coupling in between the electric and magnetic orders. Our specific heat curves show that the AFM transition temperature (TN) shifts to higher value with minute Sr doping to Y-site. Further, low temperature study shows independence of specific heat on magnetic field at 8T and 12T.

  15. Metastable magnetic state and exchange bias training effect in Mn-rich YMnO3 thin films

    NASA Astrophysics Data System (ADS)

    Kumar, Manish; Choudhary, R. J.; Phase, D. M.

    2015-04-01

    The magnetic nature of stoichiometric and Mn rich hexagonal YMnO3 films grown at different oxygen partial pressures is investigated. The stoichiometric YMnO3 thin film showed antiferromagnetic ordering below 72 K while the film having excess Mn content revealed metastable magnetic behaviour at a temperature of less than 42 K. The metastable magnetic behaviour in this sample is attributed to the competing anti-ferromagnetic and ferromagnetic phase fractions (caused by Mn2+ ions that originated due to excess Mn content). Also, in the metastable regime the exchange bias effect is observed, which is further supported by the training effect. Both the samples reveal room temperature ferroelectric behaviour.

  16. Electronic and crystal structure changes induced by in-plane oxygen vacancies in multiferroic YMnO3

    DOE PAGES

    Cheng, Shaobo; Meng, Qingping; Li, Mengli; Duan, Wenhui; Zhao, Y. G.; Sun, X. F.; Zhu, Yimei; Zhu, Jing

    2016-02-08

    Here, the widely spread oxygen vacancies (VO) in multiferroic materials can strongly affect their physical properties. However, their exact influence has rarely been identified in hexagonal manganites. Here, with the combined use of transmission electron microscopy (TEM) and first-principles calculations, we have systematically studied the electronic and crystal structure modifications induced by VO located at the same Mn atomic plane (in-plane VO). Our TEM experiments reveal that the easily formed in-plane VO not only influence the electronic structure of YMnO3 but alter the in-plane Wyckoff positions of Mn ions, which may subsequently affect the intraplane and interplane exchange interaction ofmore » Mn ions. The ferroelectricity is also impaired due to the introduction of VO. Further calculations confirm these electronic and structural changes and modifications. Our results indicate that the electronic and crystal structure of YMnO3 can be manipulated by the creation of VO.« less

  17. Magnetic transition in Y-site doped multiferroic YMnO3

    NASA Astrophysics Data System (ADS)

    Thakur, Rajesh K.; Thakur, Rasna; Gaur, N. K.

    2016-05-01

    We have synthesized polycrystalline hexagonal Y1-xSrxMnO3 (x=0.02, 0.1) compounds by using conventional solid state reaction method. The detailed structural investigations are carried out by using XRD studies which reveals the single phase formation of the reported compounds with hexagonal structure and space group P63cm (JCPDS: 25-1079). Further the XRD data of reported compounds were analyzed by RIETVELD (FULLPROFF) method which shows the decrease in the lattice parameter with increasing concentration of divalent strontium to Y-site. The observed pointed kinks in the specific heat study are indicative of the probable coupling in between the electric and magnetic orders in this class of materials. The reported systematic specific heat studies shows that the antiferromagnetic (AFM) transition temperature (TN) shifts to higher value with increasing concentration of Sr2+ ion in the YMnO3 compound which is attributed to the enhanced lattice contribution to the specific heat in the this compound. The present compound shows the independence of specific heat and magnetic transition temperature with applied magnetic field of 8T and 12T.

  18. Electric-field control of exchange bias in multiferroic epitaxial heterostructures.

    PubMed

    Laukhin, V; Skumryev, V; Martí, X; Hrabovsky, D; Sánchez, F; García-Cuenca, M V; Ferrater, C; Varela, M; Lüders, U; Bobo, J F; Fontcuberta, J

    2006-12-01

    The magnetic exchange between epitaxial thin films of the multiferroic (antiferromagnetic and ferroelectric) hexagonal YMnO3 oxide and a soft ferromagnetic (FM) layer is used to couple the magnetic response of the FM layer to the magnetic state of the antiferromagnetic one. We will show that biasing the ferroelectric YMnO3 layer by an electric field allows control of the magnetic exchange bias and subsequently the magnetotransport properties of the FM layer. This finding may contribute to paving the way towards a new generation of electric-field controlled spintronic devices.

  19. Local probing of multiferroics: First-principles study of hyperfine parameters in YMnO3 and YMn2O5

    NASA Astrophysics Data System (ADS)

    Gonçalves, J. N.; Amaral, V. S.; Correia, J. G.; Stroppa, A.; Fenta, A. S.; Baghizadeh, A.; Picozzi, S.

    2014-07-01

    We model the ferroelectric and paraelectric phases in the YMnO3 and YMn2O5, compounds with discussion of the hyperfine parameters at the atomic nuclei: electric field gradient and magnetic hyperfine field, using first-principles density functional theory FP-L/APW+lo method (WIEN2K code). The differences of the changes in hyperfine properties and their correlation due to the onset of polarization in both cases reveal their sensitivity to the different electronic densities changes due to ferroelectricity. In the case of YMnO3 the greater changes appear in the Y and O atoms, while in YMn2O5, where the polarization is induced by a magnetic transition, the parameters at Mn and its bonded O atoms are changed the most. The sensitivity of the parameters to different degrees of approximation in calculations is also discussed.

  20. Ground-state magnetic structure of hexagonal YMnO3 compound: A non-collinear spin density functional theory study

    NASA Astrophysics Data System (ADS)

    Lima, A. F.; Lalic, M. V.

    2016-10-01

    With objective to determine ground state magnetic structure of multiferroic hexagonal YMnO3 we performed systematic non-collinear spin density-functional-theory (DFT) study of six possible magnetic configurations of Mn ions, treating exchange and correlation effects by standard local-spin-density approximation (LSDA), by LSDA including Hubbard correction (LSDA+U), and taking into account the spin-orbit interaction. We found that P63 and P6´3 configurations are the most stable ones, with very small energy difference between them. This result substantiates conclusions of latest neutron-diffraction studies. Both configurations are characterized by canting of Mn spins that produces weak ferro- (P63) or anti-ferromagnetism (P6‧3) along the hexagonal c-axis. The calculated Mn magnetic moments are found to be in good agreement with experiment, and electronic structure generally agrees with previous non-collinear spin DFT studies that used different basis sets and exchange and correlation functionals.

  1. Anisotropic orbital occupation and Jahn-Teller distortion of orthorhombic YMnO{sub 3} epitaxial films: A combined experimental and theoretical study on polarization-dependent x-ray absorption spectroscopy

    SciTech Connect

    Haw, Shu-Chih; Chen, Shin-Ann; Lee, Jenn-Min; Lu, Kueih-Tzu; Lee, Ming-Tao; Pi, Tun-Wen; Chen, Jin-Ming E-mail: Zhiwei.Hu@cpfs.mpg.de; Lin, Pao-An; Lee, Chih-Hao; Hu, Zhiwei E-mail: Zhiwei.Hu@cpfs.mpg.de

    2014-04-21

    The b-axis oriented orthorhombic YMnO{sub 3} (o-YMnO{sub 3}) epitaxial films on a YAlO{sub 3} (010) substrate were fabricated with pulsed-laser deposition. The anisotropic orbital occupation and Jahn-Teller (JT) distortion of an o-YMnO{sub 3} film were investigated with polarization-dependent x-ray absorption spectra and configuration-interaction multiplet-cluster calculations. A significant energy difference, ∼3.8 eV, for the main white line along E//b and E//a in polarization-dependent Mn K-edge spectra of o-YMnO{sub 3} indicates an extraordinary JT distortion and significant anisotropic Mn–O bonding within the ab plane in the o-YMnO{sub 3} film. Most importantly, although the orbital occupation of 3d electrons in o-YMnO{sub 3} films is almost the same as that in single crystalline o-DyMnO{sub 3}, the JT distortion of o-YMnO{sub 3} films is larger than that of single crystalline o-DyMnO{sub 3}, deduced from the multiplet calculations. We speculate that this JT distortion predominantly contributes to the origin of the cycloidal spin deformation in bulk o-YMnO{sub 3}, because of a suppressed nearest-neighbor superexchange interaction and an enhanced next-nearest-neighbor superexchange interaction. These complementary results provide insight into the origin of the E-type magnetic configuration of o-YMnO{sub 3}.

  2. Structural morphology of orthorhombic sulphur

    NASA Astrophysics Data System (ADS)

    Hartman, P.

    1984-10-01

    Using an interatomic potential function specific surface energies, attachment energies and slice energies have been calculated for 7 F faces and 18 S faces of orthorhombic sulphur. These energies are compared with statistical parameters ( P values) for the frequency of occurrence of these faces on natural sulphur. It is found that P values are not correlated with the specific surface energies, except for the most important F faces. There is a positive correlation ( r=0.881) with the surface energy per mol although this quantity has no physical meaning. It is supposed that an S face is due to alternating periods of dissolution (or evaporation) and growth, so that it occurs as a narrow face on the site of a previous edge. An excellent correlation ( r=0.951) is found between the P value of an S face and a quantity P 1 P 2ξ h, where P 1 and P 2 are the P values of neighbouring faces that constitute the S face, ξ is proportional to the slice energy and h a distance determined by the interfacial angles of the three faces. This process should hold for the morphological development of any mineral, provided that no face-specific adsorption of cosolutes occurs.

  3. Stabilization of orthorhombic phase in single-crystal ZnSnN2 films

    NASA Astrophysics Data System (ADS)

    Senabulya, Nancy; Feldberg, Nathaniel; Makin, Robert. A.; Yang, Yongsoo; Shi, Guangsha; Jones, Christina M.; Kioupakis, Emmanouil; Mathis, James; Clarke, Roy; Durbin, Steven M.

    2016-07-01

    We report on the crystal structure of epitaxial ZnSnN2 films synthesized via plasma-assisted vapor deposition on (111) yttria stabilized zirconia (YSZ) and (001) lithium gallate (LiGaO2) substrates. X-ray diffraction measurements performed on ZnSnN2 films deposited on LiGaO2 substrates show evidence of single-crystal, phase-pure orthorhombic structure in the Pn21a symmetry [space group (33)], with lattice parameters in good agreement with theoretically predicted values. This Pn21a symmetry is imposed on the ZnSnN2 films by the LiGaO2 substrate, which also has orthorhombic symmetry. A structural change from the wurtzite phase to the orthorhombic phase in films grown at high substrate temperatures ˜550°C and low values of nitrogen flux ˜10-5 Torr is observed in ZnSnN2 films deposited on YSZ characterized by lattice contraction in the basal plane and a 5.7% expansion of the out-of-plane lattice parameter.

  4. Non-polar electromagnon in hexa- YMnO3

    NASA Astrophysics Data System (ADS)

    Simpson, J. R.; Sushkov, A. B.; Drew, H. D.; Mostovoy, M.; Gozar, A.; Blumberg, G.; Lee, N.; Cheong, S.-W.

    2011-03-01

    Coupled magnon-phonon excitations in magnetic materials have been observed in multiferroic materials and involve the polar optical phonons. Such excitations may be more general, occurring in non-ferroelectric magnets and involving non-polar (Raman or silent) phonons. Temperature-dependent Raman spectra of low-frequency excitations in single-crystal h- YMn O3 are measured using a triple-grating spectrometer. We compare the spectral intensity of magnons to changes in the Raman-active phonons above and below the Neel temperature. Raman and infrared experimental results on h-YMnO3 demonstrate that the 5 meV hybrid mode observed in neutron scattering is an example of a Raman electromagnon.

  5. Observation of Anomalous Phonons in Orthorhombic Rare-earth Manganites

    SciTech Connect

    P Gao; H Chen; T Tyson; Z Liu; J Bai; L Wang; Y Chio; S Cheong

    2011-12-31

    We observe the appearance of a phonon near the lock-in temperature in orthorhombic REMnO{sub 3} (RE denotes rare earth) (RE: Lu and Ho) and anomalous phonon hardening in orthorhombic LuMnO{sub 3}. The anomalous phonon occurs at the onset of spontaneous polarization. No such changes were found in incommensurate orthorhombic DyMnO{sub 3}. These observations directly reveal different electric polarization mechanisms in the E-type and incommensurate-type orthorhombic REMnO{sub 3}.

  6. Topological crystalline metal in orthorhombic perovskite iridates.

    PubMed

    Chen, Yige; Lu, Yuan-Ming; Kee, Hae-Young

    2015-03-16

    Since topological insulators were theoretically predicted and experimentally observed in semiconductors with strong spin-orbit coupling, increasing attention has been drawn to topological materials that host exotic surface states. These surface excitations are stable against perturbations since they are protected by global or spatial/lattice symmetries. Following the success in achieving various topological insulators, a tempting challenge now is to search for metallic materials with novel topological properties. Here we predict that orthorhombic perovskite iridates realize a new class of metals dubbed topological crystalline metals, which support zero-energy surface states protected by certain lattice symmetry. These surface states can be probed by photoemission and tunnelling experiments. Furthermore, we show that by applying magnetic fields, the topological crystalline metal can be driven into other topological metallic phases, with different topological properties and surface states.

  7. Conversion acoustic resonances in orthorhombic crystals

    NASA Astrophysics Data System (ADS)

    Lyubimov, V. N.; Bessonov, D. A.; Alshits, V. I.

    2016-05-01

    A classification of acoustic-beam reflection resonances in orthorhombic crystals under conditions where a proximity to conversion is implemented in the vicinity of total internal reflection is proposed. In this case, the energy from the incident pump beam falls almost entirely into a narrow intense reflected beam propagating at a small angle with respect to the surface. The crystal boundary is parallel to one of the elastic symmetry planes, and the excited beam propagates near one of axes 2 in this plane. Depending on the relations between the elastic moduli and the chosen propagation geometry, 18 types of resonances may occur, but no more than three in each crystal. The developed theory combines an approximate analytical description and accurate computer analysis. The relations between the elastic moduli providing minimum energy loss over the parasite reflected wave are determined. Some crystals with resonant excitation very close to conversion are revealed.

  8. Niobia and tantala codoped orthorhombic zirconia ceramics

    SciTech Connect

    Hoeftberger, M.; Gritzner, G.

    1995-04-15

    During recent studies it was found that codoping of zirconia with niobia and tantala yielded very corrosion resistant, orthorhombic zirconia ceramics. The powders for those novel ceramics were made via the sol-gel technique by hydrolysis of the respective metal propoxides; a method which required dry-box techniques during the preparation of the alkoxides. In these studies the authors investigated the fabrication of precursor material from aqueous solutions. The preparation of aqueous solutions of salts of zirconium, niobium and tantalum is hampered by rapid hydrolysis. Premature hydrolysis of the chlorides and oxichlorides of niobium, tantalum and zirconium can be, however, prevented in aqueous solutions of oxalic acid. Thus the authors investigated the coprecipitation of hydroxides as precursors by reacting oxalic acid solutions of the respective cations with aqueous ammonia. In addition they studied the effects of calcination and of hydrothermal conversion of the hydroxides to oxides on the powder characteristics and on the mechanical properties of the niobia and tantala codoped zirconia ceramics.

  9. Formation of (111) orientation-controlled ferroelectric orthorhombic HfO2 thin films from solid phase via annealing

    NASA Astrophysics Data System (ADS)

    Mimura, Takanori; Katayama, Kiliha; Shimizu, Takao; Uchida, Hiroshi; Kiguchi, Takanori; Akama, Akihiro; Konno, Toyohiko J.; Sakata, Osami; Funakubo, Hiroshi

    2016-08-01

    0.07YO1.5-0.93HfO2 (YHO7) films were prepared on various substrates by pulse laser deposition at room temperature and subsequent heat treatment to enable a solid phase reaction. (111)-oriented 10 wt. % Sn-doped In2O3(ITO)//(111) yttria-stabilized zirconia, (111)Pt/TiOx/SiO2/(001)Si substrates, and (111)ITO/(111)Pt/TiOx/SiO2/(001)Si substrates were employed for film growth. In this study, X-ray diffraction measurements including θ-2θ measurements, reciprocal space mappings, and pole figure measurements were used to study the films. The film on (111)ITO//(111)yttria-stabilized zirconia was an (111)-orientated epitaxial film with ferroelectric orthorhombic phase; the film on (111)ITO/(111)Pt/TiOx/SiO2/(001)Si was an (111)-oriented uniaxial textured film with ferroelectric orthorhombic phase; and no preferred orientation was observed for the film on the (111)Pt/TiOx/SiO2/(001)Si substrate, which does not contain ITO. Polarization-hysteresis measurements confirmed that the films on ITO covered substrates had saturated ferroelectric hysteresis loops. A remanent polarization (Pr) of 9.6 and 10.8 μC/cm2 and coercive fields (Ec) of 1.9 and 2.0 MV/cm were obtained for the (111)-oriented epitaxial and uniaxial textured YHO7 films, respectively. These results demonstrate that the (111)-oriented ITO bottom electrodes play a key role in controlling the orientation and ferroelectricity of the phase formation of the solid films deposited at room temperature.

  10. Specific features of nonvalent interactions in orthorhombic perovskites

    NASA Astrophysics Data System (ADS)

    Serezhkin, V. N.; Pushkin, D. V.; Serezhkina, L. B.

    2014-07-01

    It is established that isostructural orthorhombic perovskites ABO3 (sp. gr. Pnma in different systems, no. 62, Z = 4), depending on the specificity of nonvalent interactions (which determine the combinatorial-topological type of the Voronoi-Dirichlet polyhedra (VDPs) of four basis atoms), are divided into ten different stereotypes. It is shown by the example of 259 perovskites belonging to the DyCrO3 stereotype that VDP characteristics can be used to quantitatively estimate the distortion of BO6 octahedra, including that caused by the Jahn-Teller effect. It is found that one of the causes of the distortion of the coordination polyhedra of atoms in the structure of orthorhombic perovskites is heteroatomic metal-metal interactions, for which the interatomic distances are much shorter than the sum of the Slater radii of A and B atoms.

  11. Elastic constants in orthorhombic hen egg-white lysozyme crystals.

    PubMed

    Kitajima, N; Tsukashima, S; Fujii, D; Tachibana, M; Koizumi, H; Wako, K; Kojima, K

    2014-01-01

    The ultrasonic sound velocities of cross-linked orthorhombic hen egg-white lysozyme (HEWL) crystals, including a large amount of water in the crystal, were measured using an ultrasonic pulse-echo method. As a result, seven elastic constants of orthorhombic crystals were observed to be C11 = 5.24 GPa, C22 = 4.87 GPa, C12 = 4.02 GPa, C33 = 5.23 GPa, C44 = 0.30 GPa, C55 = 0.40 GPa, and C66 = 0.43 GPa, respectively. However, C13 and C23 could not be observed because the suitable crystal planes could not be cut from bulk crystals. We conclude that the observed elastic constants of the cross-linked crystals are coincident with those of the intrinsic crystals without cross-linking. Moreover, the characteristics of the elastic constants in orthorhombic HEWL crystals are due to the fact that the shear elastic constants, C44, C55, and C66, are softer than in tetragonal crystals. That is, the shear components, C44, C55, and C66, are one half of those of the tetragonal crystals.

  12. Giant orthorhombic distortions by Cu+ in ferrimagnetic spinel Mn334

    NASA Astrophysics Data System (ADS)

    Chung, Jae-Ho; Lee, Kee Hwan; Chang, Hun; Hwang, In Yong; Kang, Hyun Wook; Kim, Su Jae; Lee, Seongsu

    2015-03-01

    Mn3O4 is a tetragonal (c > a) spinel that exhibits noncollinear Yafet-Kittel ferrimagnetic ordering at low temperatures. We report large orthorhombic distortions in its ferrimagnetic phase stabilized by a few percent of Cu doping. The orthorhombic strains of the ferrimagnetic phases increased linearly to the doping and reached up to ɛ ~ 8 . 2 ×10-3 for x = 0.19, which is three times larger than the saturated value under external magnetic fields. For high doping (xagt 0 . 17), the distortions first appeared in the paramagnetic phases and underwent further enhancement simultaneously with the onset of the noncollinear ferrimagnetic ordering. We present the rich magnetostructural phase diagram of CuxMn3-xO4, and argue that the diluted t2 orbital degeneracy of Cu2+ under tetrahedral crystal field breaks the global symmetry and triggers the orthorhombic instability inherent in Mn3O4. This work was supported by the National Research Foundation of Korea through the ARCNEX (NRF-2011-0031933).

  13. Van vleck paramagnetism in orthorhombic TiO2 (Brookite)

    USGS Publications Warehouse

    Senftle, F.E.; Thorpe, A.N.

    1968-01-01

    The magnetic susceptibility of the orthorhombic form of titanium dioxide has been measured from 5 to 300??K. After deducting the temperature-dependent component, which is probably due to defects or impurities, and the free-ion diamagnetic component, the Van Vleck paramagnetism was estimated to be 33??10-6 emu/mole. Comparison is made between this value and the Van Vleck paramagnetism of strontium titanate and the two tetragonal forms of titanium dioxide: rutile and anatase. ?? 1968 The American Physical Society.

  14. Prediction of Weyl semimetal in orthorhombic MoTe2

    NASA Astrophysics Data System (ADS)

    Sun, Yan; Wu, Shu-Chun; Ali, Mazhar N.; Felser, Claudia; Yan, Binghai

    2015-10-01

    We investigate the orthorhombic phase (Td) of the layered transition-metal dichalcogenide MoTe2 as a Weyl semimetal candidate. MoTe2 exhibits four pairs of Weyl points lying slightly above (˜6 meV ) the Fermi energy in the bulk band structure. Different from its cousin WTe2, which was recently predicted to be a type-II Weyl semimetal, the spacing between each pair of Weyl points is found to be as large as 4% of the reciprocal lattice in MoTe2 (six times larger than that of WTe2). When projected onto the surface, the Weyl points are connected by Fermi arcs, which can be easily accessed by angle-resolved photoemission spectroscopy due to the large Weyl point separation. In addition, we show that the correlation effect or strain can drive MoTe2 from a type-II to a type-I Weyl semimetal.

  15. Critical thickness of high structural quality SrTiO3 films grown on orthorhombic (101) DyScO3

    SciTech Connect

    Hawley, Marilyn E; Biegalski, Michael D; Schlom, Darrell G

    2008-01-01

    Strained epitaxial SrTiO{sub 3} films were grown on orthorhombic (101) DyScO{sub 3} substrates by reactive molecular-beam epitaxy. The epitaxy of this substrate/film combination is cube on cube with a pseudocubic out-of-plane (001) orientation. The strain state and structural perfection of films with thicknesses ranging from 50 to 1000 {angstrom} were examined using x-ray scattering. The critical thickness at which misfit dislocations was introduced was between 350 and 500 {angstrom}. These films have the narrowest rocking curves (full width at half maximum) ever reported for any heteroepitaxial oxide film (0.0018{sup o}). Only a modest amount of relaxation is seen in films exceeding the critical thicknesses even after postdeposition annealing at 700{sup o}C in 1 atm of oxygen. The dependence of strain relaxation on crystallographic direction is attributed to the anisotropy of the substrate. These SrTiO{sub 3} films show structural quality more typical of semiconductors such as GaAs and silicon than perovskite materials; their structural relaxation behavior also shows similarity to that of compound semiconductor films.

  16. Epitaxial solar cells fabrication

    NASA Technical Reports Server (NTRS)

    Daiello, R. V.; Robinson, P. H.; Kressel, H.

    1975-01-01

    Silicon epitaxy has been studied for the fabrication of solar cell structures, with the intent of optimizing efficiency while maintaining suitability for space applications. SiH2CL2 yielded good quality layers and junctions with reproducible impurity profiles. Diode characteristics and lifetimes in the epitaxial layers were investigated as a function of epitaxial growth conditions and doping profile, as was the effect of substrates and epitaxial post-gettering on lifetime. The pyrolytic decomposition of SiH4 was also used in the epitaxial formation of highly doped junction layers on bulk Si wafers. The effects of junction layer thickness and bulk background doping level on cell performance, in particular, open-circuit voltage, were investigated. The most successful solar cells were fabricated with SiH2 CL2 to grow p/n layers on n(+) substrates. The best performance was obtained from a p(+)/p/n/n(+) structure grown with an exponential grade in the n-base layer.

  17. Orthorhombic Titanium Matrix Composite Subjected to Simulated Engine Mission Cycles

    NASA Technical Reports Server (NTRS)

    Gabb, Timothy P.

    1997-01-01

    Titanium matrix composites (TMC's) are commonly made up of a titanium alloy matrix reinforced by silicon carbide fibers that are oriented parallel to the loading axis. These composites can provide high strength at lower densities than monolithic titanium alloys and superalloys in selected gas turbine engine applications. The use of TMC rings with unidirectional SiC fibers as reinforcing rings within compressor rotors could significantly reduce the weight of these components. In service, these TMC reinforcing rings would be subjected to complex service mission loading cycles, including fatigue and dwell excursions. Orthorhombic titanium aluminide alloys are of particular interest for such TMC applications because their tensile and creep strengths are high in comparison to those of other titanium alloys. The objective of this investigation was to assess, in simulated mission tests at the NASA Lewis Research Center, the durability of a SiC (SCS-6)/Ti-22Al-23Nb (at.%) TMC for compressor ring applications, in cooperation with the Allison Engine Company.

  18. Epitaxial strain induced phase transitions in La-doped BiFeO3 thin films on Si substrates

    NASA Astrophysics Data System (ADS)

    Chen, Deyang; Nelson, Christopher T.; Zhu, Xiaohong; Serrao, Claudy R.; Gao, Ya; Yi, Di; Liu, Jian; Ramesh, Ramamoorthy; Zeng, Dechang; Schlom, Darrel G.; South China University Of Technology Collaboration; Cornell University Collaboration; Concept Team

    2014-03-01

    Epitaxial strain is a powerful pathway to trigger phase transitions with emergent phenomena in oxide thin films, e.g., strain induced ferroelectric to ferroelectric (PE-PE) phase transition from tetragonal-like to rhombohedral-like phase in Pb(ZrxTi1-x) O3 and BiFeO3 films. In this study, we report a strain driven antiferroelectric to ferroelectric (AFE-FE) phase transition from orthorhombic (O) to rhombohedral (R) phase in LaxBi1-xFeO3 (LBFO) thin film on Si substrates. The ground state of LaxBi1-xFeO3 bulk is antiferroelectric PbZrO3 type orthorhombic phase. We show that epitaxial strain from Si substrates can stabilize a rhombohedral structure of LBFO in 20 nm films and intermediate strains position LBFO into a nanoscale mixture of rhombohedral and orthorhombic phases in 30-100 nm films and then strain relaxation in 125nm films leads to the orthorhombic phase. Transmission electron microscopy (TEM) shows atomically sharp O/R morphotropic phase boundary (MPB) with O phase domains larger than 10 nm in width. In summary, our findings open a new path to drive AFE-FE phase transition in LBFO and provide a route to study O/R MPB.

  19. Epitaxial thin films

    DOEpatents

    Hunt, Andrew Tye; Deshpande, Girish; Lin, Wen-Yi; Jan, Tzyy-Jiuan

    2006-04-25

    Epitatial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal gain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.

  20. Magnetic properties of the orthorhombic NdPd

    NASA Astrophysics Data System (ADS)

    Dhar, Vijay; Provino, A.

    2016-09-01

    The equiatomic NdPd compound crystallizes in the orthorhombic CrB structure type (oS8, Cmcm, No. 63). The NdPd phase melts congruently at 1240 °C, as observed by differential thermal analysis; one further sharp thermal effect detected at 1040 °C is very likely due to a structural transition. We confirm the CrB prototype for the low-temperature form of NdPd. The lattice parameters of this compound are a=3.842(2) Å, b=10.776(7) Å, c=4.605(2) Å, as obtained from Guinier powder pattern; those for the corresponding iso-structural LaPd compound, prepared as non-magnetic reference, are a=3.947(2) Å, b=11.036(3) Å, c=4.663(2) Å. Despite the fact that NdPd has been known since long, its physical properties have not been investigated till date. Here we report the results of magnetization, heat capacity and electrical resistivity measurements performed on this compound. NdPd undergoes a single ferromagnetic transition close to 15 K, inferred from a sharp upturn in the magnetization at lower temperatures and from Arrott plots measured at selected temperatures between 1.9 and 18 K. The coercive field and remnant magnetization at 1.9 K are 320 Oe and 0.24 μB/f.u., which become negligible at 15 K. A sharp peak in the heat capacity at ≈15 K confirms the bulk magnetic transition. Isothermal magnetization at 2 K shows a tendency to saturation, reaching a value of 1.9 μB/f.u. at the maximum applied field of 70 kOe. The zero field resistivity shows an anomaly near 15 K, in correspondence with the magnetic and heat capacity data. A negative magnetoresistivity, typical of a ferromagnet, is observed in the magnetically ordered state in an applied magnetic field of 50 kOe. LaPd is a typical Pauli paramagnet with a Sommerfeld coefficient γ=3.9 mJ/mol K2.

  1. Investigation of structure and magnetic properties of Ru-doped YMnO3

    NASA Astrophysics Data System (ADS)

    Dai, Y.; Zhang, A. M.; Yang, L. P.; Gao, Z. R.; Wu, X. S.

    2016-07-01

    A series of polycrystalline YMn1-xRuxO3 (0 ≤ x ≤ 0.2) samples were prepared by traditional solid-state reaction method. Effects of doping on the microstructures and magnetic properties were investigated. Microstructural results reveal that samples crystallize in a single hexagonal structure with P63cm group for x ≤ 0.1. Lattice parameters a, c, and unit-cell volume of YMn1-xRuxO3 are found to increase with doping content, which are ascribed to the larger radius of Ru3+ than that of Mn3+. Weak ferromagnetism is found and is enhanced with increasing doping concentration x. The bond angles of Mn-O3-Mn and Mn-O4-Mn are changed in the opposite trends, which break the Mn-Mn exchange interaction, thus the antiferromagnetic ordering. The MnO5 bipyramid is found to be relieved and the trimerization of Mn ions is weakened. These structural modifications result in the increase of weak ferromagnetism ordering in samples.

  2. Materials Data on YMnO3 (SG:194) by Materials Project

    SciTech Connect

    Kristin Persson

    2014-11-02

    Computed materials data using density functional theory calculations. These calculations determine the electronic structure of bulk materials by solving approximations to the Schrodinger equation. For more information, see https://materialsproject.org/docs/calculations

  3. Materials Data on YMnO3 (SG:185) by Materials Project

    SciTech Connect

    Kristin Persson

    2015-01-27

    Computed materials data using density functional theory calculations. These calculations determine the electronic structure of bulk materials by solving approximations to the Schrodinger equation. For more information, see https://materialsproject.org/docs/calculations

  4. Vacancies in epitaxial graphene

    SciTech Connect

    Davydov, S. Yu.

    2015-08-15

    The coherent-potential method is used to consider the problem of the influence of a finite concentration of randomly arranged vacancies on the density of states of epitaxial graphene. To describe the density of states of the substrate, simple models (the Anderson model, Haldane-Anderson model, and parabolic model) are used. The electronic spectrum of free single-sheet graphene is considered in the low-energy approximation. Charge transfer in the graphene-substrate system is discussed. It is shown that, in all cases, the density of states of epitaxial graphene decreases proportionally to the vacancy concentration. At the same time, the average charge transferred from graphene to the substrate increases.

  5. Ion Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Yamada, I.

    The following sections are included: * FILM FORMATION BY ION BEAMS * Fundamental Processes in Film Formation by Low Energy Ion Beams * Comparison of ICB with Other Physical Vapor Deposition Methods * Vacuum Deposition * Sputter Deposition * Ion Plating * Ion Beam Deposition * Simultaneous Deposition and Implantation * Plasma Enhanced Deposition * Section I References * ION CLUSTER BEAM DEPOSITION AND CLUSTER BEAM FORMATION * Nucleation Process * Growth and Condensation Process * Section II References * CHARACTERISTICS OF THE CLUSTER * Velocity of Clusters * Energy of Clusters * TEM Observation of Clusters * Structural Properties * Section III References * IONIZED CLUSTER BEAM DEPOSITION SYSTEM * Section IV References * FILM DEPOSITION PROCESS BY ICB * Fundamental Process * Effects of Kinetic Energy on the Film Properties * Epitaxial phenomena * Crystallographic Structure * Physical Structure of Films * Effects of the Electric Charge on the Film Properties * Section V References * APPLICATIONS * Silicon and Silicon Alloy Films * Low Temperature Epitaxy of Silicon Films * Thermally Stable a-Si Film Growth * High Quality SiO2 Film Deposition * Epitaxial A1 Films * Electromigration Resistant A1 Film * Thermally Stable Al/Si Contact * II-VI and III-V Compound Films * Thin Multiple Layered Film * CONCLUSIONS * Acknowledgements * Section VI References

  6. Epitaxial magnetic oxide heterostructures

    NASA Astrophysics Data System (ADS)

    Belenky, Land J.

    Perovskite oxides exhibit a range of physical properties including insulator, semiconductor, metal, superconductor, ferromagnet and many more. Interactions between order parameters result in new properties such as the multiferroic materials. The production of artificial layered epitaxial magnetic heterostructures motivates this research. This requires atomic layer controlled growth which depends on selection of materials for their structural and chemical compatibility, preparation of substrates to achieve well-defined surfaces at the atomic level and the development of a deposition and analysis technique capable of controlling growth' at this level. We have used a pulsed laser deposition system with in situ reflection high-energy electron diffraction to produce epitaxial magnetic oxide heterostructures on lattice-matched substrates and have investigated a number of magnetic interactions. We have demonstrated an unusual antiferromagnetic interfacial exchange coupling between epitaxial bilayers of La0.67Sr0.33MnO 3 and SrRuO3 grown on (001) SrTiO3 substrates. The sign and magnitude of the exchange field depends on the cooling field. By interrupting the charge transfer at the interface with a very thin insulating layer, we have demonstrated this exchange biasing effect is related to the spin-dependent band structures of the materials. We have investigated the structural and magnetic properties of epitaxial multilayers and superlattices of manganites. These materials exhibit colossal magnetoresistance and the Curie temperature can be adjusted over a range of 100 K. We have fabricated La0.67Sr0.33MnO3/La 0.82Ba0.18MnO3 superlattices with layers as thin as 8 unit cells (32A). These superlattices have magnetic transition temperatures above 350 K and coercivities of approximately 10 Oe. Deposition techniques can effectively control the out-of-plane dimension on the nanoscale but control or lateral dimensions has proven more challenging. We have fabricated magnetic

  7. Grazing-incidence X-ray diffraction study of rubrene epitaxial thin films.

    PubMed

    Fumagalli, Enrico; Campione, Marcello; Raimondo, Luisa; Sassella, Adele; Moret, Massimo; Barba, Luisa; Arrighetti, Gianmichele

    2012-09-01

    The growth of organic semiconductors as thin films with good and controlled electrical performances is nowadays one of the main tasks in the field of organic semiconductor-based electronic devices. In particular it is often required to grow highly crystalline and precisely oriented thin films. Here, thanks to grazing-incidence X-ray diffraction measurements carried out at the ELETTRA synchrotron facility, it is shown that rubrene thin films deposited by organic molecular beam epitaxy on the surface of tetracene single crystals have the structure of the known orthorhombic polymorph, with the (2 0 0) plane parallel to the substrate surface. Moreover, the exact epitaxial relationship between the film and the substrate crystalline structures is determined, demonstrating the presence of a unique in-plane orientation of the overlayer. PMID:22898945

  8. Dipole-field sums and Lorentz factors for orthorhombic lattices, and implications for polarizable molecules

    NASA Technical Reports Server (NTRS)

    Purvis, C. K.; Taylor, P. L.

    1982-01-01

    A method for computing the Lorentz tensor components in single crystals via rapidly convergent sums of Bessels functions is developed using the relationship between dipole-field sums and the tensor components. The Lorentz factors for simple, body-centered, and base-centered orthorhombic lattices are computed using this method, and the derivative Lorentz factors for simple orthorhombic lattices are also determined. Both the Lorentz factors and their derivatives are shown to be very sensitive to a lattice structure. The equivalent of the Clausius-Mossotti relation for general orthorhombic lattices is derived using the Lorentz-factor formalism, and the permanent molecular dipole moment is related to crystal polarization for the case of a ferroelectric of polarizable point dipoles. It is concluded that the polarization enhancement due to self-polarization familiar from classical theory may actually be a reduction in consequences of negative Lorentz factors in one or two lattice directions for noncubic crystals.

  9. Crystallization of the Focal Adhesion Kinase Targeting (FAT) Domain in a Primitive Orthorhombic Space Group

    SciTech Connect

    Magis,A.; Bailey, K.; Kurenova, E.; Hernandez Prada, J.; Cance, W.; Ostrov, D.

    2008-01-01

    X-ray diffraction data from the targeting (FAT) domain of focal adhesion kinase (FAK) were collected from a single crystal that diffracted to 1.99 Angstroms resolution and reduced to the primitive orthorhombic lattice. A single molecule was predicted to be present in the asymmetric unit based on the Matthews coefficient. The data were phased using molecular-replacement methods using an existing model of the FAK FAT domain. All structures of human focal adhesion kinase FAT domains solved to date have been solved in a C-centered orthorhombic space group.

  10. Misfit dislocations in epitaxy

    NASA Astrophysics Data System (ADS)

    van der Merwe, Jan H.

    2002-08-01

    This article on epitaxy highlights the following: the definition and some historical milestones; the introduction by Frenkel and Kontorowa (FK) of a truncated Fourier series to model the periodic interaction at crystalline interfaces; the invention by Frank and van der Merwe (FvdM)—using the FK model—of (interfacial) misfit dislocations as an important mechanism in accommodating misfit at epilayer-substrate interfaces; the generalization of the FvdM theory to multilayers; the application of the parabolic model by Jesser and van der Merwe to describe, for growing multilayers and superlattices, the impact of Fourier coefficients in the realization of epitaxial orientations and the stability of modes of misfit accommodation; the involvement of intralayer interaction in the latter—all features that impact on the attainment of perfection in crystallinity of thin films, a property that is so vital in the fabrication of useful uniformly thick epilayers (uniformity being another technological requirement), which also depends on misfit accommodation through the interfacial energy that function strongly in the criterion for growth modes, proposed by Bauer; and the ingenious application of the Volterra model by Matthews and others to describe misfit accommodation by dislocations in growing epilayers.

  11. Fabrication and characterization of electrospun orthorhombic InVO4 nanofibers

    NASA Astrophysics Data System (ADS)

    Song, Lingjun; Liu, Suwen; Lu, Qifang; Zhao, Gang

    2012-02-01

    The novel orthorhombic InVO4 nanofibers have been successfully synthesized by annealing electrospun precursor fibers. Citric acid was used as a ligand for it could react with metal salts to get a transparent homogeneous precursor solution and homogeneous precursor sol for electrospining. Polyvinyl pyrrolidone (PVP, K-30) was used as a binder and a structure guide reagent because it was one kind of water-soluble polymers. It is easy to gain one-dimensional materials while the viscosity of the citrate/PVP sol was suitable. The structure, morphology and photocatalytic properties of the nanofibers were characterized by X-ray diffraction (XRD), thermogravimetry analysis (TGA), scanning electron microscopy (SEM) analysis, UV-vis spectrophotometer and fluorescence spectrophotometer. The nanofibers calcined at 700 °C were orthorhombic InVO4 with a width in the range of 30-100 nm and length in micron-grade. This one-dimensional pure orthorhombic InVO4 had the higher photocatalytic activity under visible light irradiation. The photo-degradation rate of nitrobenzene aqueous solution under visible light reached 69% after 6 h. It is obvious that the orthorhombic InVO4 nanofibers have a potential application in wastewater-treatment.

  12. High-efficient thermoelectric materials: The case of orthorhombic IV-VI compounds.

    PubMed

    Ding, Guangqian; Gao, Guoying; Yao, Kailun

    2015-01-01

    Improving the thermoelectric efficiency is one of the greatest challenges in materials science. The recent discovery of excellent thermoelectric performance in simple orthorhombic SnSe crystal offers new promise in this prospect [Zhao et al. Nature 508, 373 (2014)]. By calculating the thermoelectric properties of orthorhombic IV-VI compounds GeS,GeSe,SnS, and SnSe based on the first-principles combined with the Boltzmann transport theory, we show that the Seebeck coefficient, electrical conductivity, and thermal conductivity of orthorhombic SnSe are in agreement with the recent experiment. Importantly, GeS, GeSe, and SnS exhibit comparative thermoelectric performance compared to SnSe. Especially, the Seebeck coefficients of GeS, GeSe, and SnS are even larger than that of SnSe under the studied carrier concentration and temperature region. We also use the Cahill's model to estimate the lattice thermal conductivities at the room temperature. The large Seebeck coefficients, high power factors, and low thermal conductivities make these four orthorhombic IV-VI compounds promising candidates for high-efficient thermoelectric materials.

  13. High-efficient thermoelectric materials: The case of orthorhombic IV-VI compounds

    PubMed Central

    Ding, Guangqian; Gao, Guoying; Yao, Kailun

    2015-01-01

    Improving the thermoelectric efficiency is one of the greatest challenges in materials science. The recent discovery of excellent thermoelectric performance in simple orthorhombic SnSe crystal offers new promise in this prospect [Zhao et al. Nature 508, 373 (2014)]. By calculating the thermoelectric properties of orthorhombic IV-VI compounds GeS,GeSe,SnS, and SnSe based on the first-principles combined with the Boltzmann transport theory, we show that the Seebeck coefficient, electrical conductivity, and thermal conductivity of orthorhombic SnSe are in agreement with the recent experiment. Importantly, GeS, GeSe, and SnS exhibit comparative thermoelectric performance compared to SnSe. Especially, the Seebeck coefficients of GeS, GeSe, and SnS are even larger than that of SnSe under the studied carrier concentration and temperature region. We also use the Cahill's model to estimate the lattice thermal conductivities at the room temperature. The large Seebeck coefficients, high power factors, and low thermal conductivities make these four orthorhombic IV-VI compounds promising candidates for high-efficient thermoelectric materials. PMID:26045338

  14. Epitaxial Silicon Doped With Antimony

    NASA Technical Reports Server (NTRS)

    Huffman, James E.; Halleck, Bradley L.

    1996-01-01

    High-purity epitaxial silicon doped with antimony made by chemical vapor deposition, using antimony pentachloride (SbCI5) as source of dopant and SiH4, SiCI2H2, or another conventional source of silicon. High purity achieved in layers of arbitrary thickness. Epitaxial silicon doped with antimony needed to fabricate impurity-band-conduction photodetectors operating at wavelengths from 2.5 to 40 micrometers.

  15. Orthorhombic faults system at the onset of the Late Mesozoic-Cenozoic Barents Sea rifting

    NASA Astrophysics Data System (ADS)

    Collanega, Luca; Breda, Anna; Massironi, Matteo

    2016-04-01

    The structures of the Late Mesozoic/Cenozoic Barents Sea rifting have been investigated with multichannel 3D seismics, covering an area of 7700 sqKm in the Hoop Fault Complex, a transitional area between the platform and the marginal basins. The main structural lineaments have been mapped in a time domain 3D surface and their activity ranges have been constrained through the sin-sedimentary thickness variations detected in time-thickness maps. Two main fault systems have been identified: an orthorhombic fault system consisting of two fault sets trending almost perpendicularly one to the other (WNW-ESE and NNE-SSW) and a graben/half-graben system, elongated approximately N-S in the central part of the study area. While the graben/half-graben system can be explained through the theory of Anderson, this landmark theory fails to explain the simultaneous activity of the two fault sets of the orthorhombic system. So far, the models that can better explain orthorhombic fault arrangements are the slip model by Reches (Reches, 1978; Reches, 1983; Reches and Dieterich, 1983) and the odd-axis model by Krantz (Krantz, 1988). However, these models are not definitive and a strong quest to better understand polymodal faulting is actual (Healy et al., 2015). In the study area, the presence of both a classical Andersonian and an orthorhombic system indicates that these models are not alternative but are both effective and necessary to explain faulting in different circumstances. Indeed, the Andersonian plain strain and the orthorhombic deformation have affected different part of the succession during different phases of the rifting. In particular, the orthorhombic system has affected only the Late Mesozoic-Cenozoic interval of the succession and it was the main active system during the initial phase of the rifting. On the other hand, the graben/half-graben system has affected the whole sedimentary succession, with an increasing activity during the development of the rifting. It has

  16. Photocatalytic water splitting for hydrogen generation on cubic, orthorhombic, and tetragonal KNbO3 microcubes

    NASA Astrophysics Data System (ADS)

    Zhang, Tingting; Zhao, Kun; Yu, Jiaguo; Jin, Jian; Qi, Yang; Li, Huiquan; Hou, Xinjuan; Liu, Gang

    2013-08-01

    Potassium niobate (KNbO3) microcubes with orthorhombic and tetragonal phases were hydrothermally prepared and characterized by powder X-ray diffraction, nitrogen adsorption-desorption, micro-Raman spectroscopy, Fourier transform infrared spectroscopy, diffuse reflectance UV-visible spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy, and high-resolution transmission electron microscopy. The photoreactivity of the as-prepared KNbO3 samples was evaluated regarding the hydrogen evolution from aqueous methanol under UV, and the results were compared with that of cubic KNbO3 microcubes. The photocatalytic reactivity was shown to be phase-dependent, following the order cubic > orthorhombic > tetragonal. Insight into the phase-dependent photocatalytic properties was gained by first-principles density functional calculations. The best photocatalytic performance of cubic KNbO3 is ascribed to it having the highest symmetry in the bulk structure and associated unique electronic structure. Further, the surface electronic structure plays a key role leading to the discrepancy in photoreactivity between orthorhombic and tetragonal KNbO3. The results from this study are potentially applicable to a range of perovskite-type mixed metal oxides useful in water splitting as well as other areas of heterogeneous photocatalysis.Potassium niobate (KNbO3) microcubes with orthorhombic and tetragonal phases were hydrothermally prepared and characterized by powder X-ray diffraction, nitrogen adsorption-desorption, micro-Raman spectroscopy, Fourier transform infrared spectroscopy, diffuse reflectance UV-visible spectroscopy, X-ray photoelectron spectroscopy, scanning electron microscopy, and high-resolution transmission electron microscopy. The photoreactivity of the as-prepared KNbO3 samples was evaluated regarding the hydrogen evolution from aqueous methanol under UV, and the results were compared with that of cubic KNbO3 microcubes. The photocatalytic reactivity was

  17. Epitaxial strain induced ferroelectricity in rocksalt binary compound: Hybrid functional Ab initio calculation and soft mode group theory analysis

    NASA Astrophysics Data System (ADS)

    Kim, Bog G.

    2011-05-01

    We have studied the detailed mechanism of epitaxial strain induced ferroelectricity in rocksalt binary compound by ab initio calculation and soft mode group theory analysis. By applying compressive strain, cubic binary rocksalt (F m3m) transforms into tetragonal (I 4/mmm) structure. With increasing compressive strain, tetragonal structure becomes unstable against spontaneous transformation to lower symmetry tetragonal structure (I 4/mm), evident both from ab initio calculation and from soft mode group theory analysis. For the tensile strain, phase transition sequence can be cubic binary rocksalt to tetragonal (I 4/mmm) and to orthorhombic structure (I m2m). From ab initio calculation and space group analysis, we propose that the epitaxial strain induced ferroelectricity of rocksalt binary compound is the generic property.

  18. Polarization rotation associated critical phenomena in epitaxial PbTiO3 thin films near room temperature

    NASA Astrophysics Data System (ADS)

    Ma, Wenhui

    2016-04-01

    Strain-driven and temperature-driven monoclinic-orthorhombic phase transition in epitaxial PbTiO3 exhibit similar behavior under electric field, i.e., polarization discontinuity is reduced at the first-order ferroelectric-ferroelectric transition whose latent heat vanishes at a critical point. Due to critical phenomena the energy barrier for polarization rotation significantly diminishes, and hence thermodynamic response functions tend to diverge in the induced monoclinic states. Phenomenological calculations show that dielectric and piezoelectric properties are highly tunable by in-plane strain and electric field, and large electromechanical response may occur in epitaxial PbTiO3 thin films at room temperature. Phenomenological calculations show that large electrocaloric responsivity can also be expected at room temperature by manipulating the phase transition.

  19. The Solubility of Orthorhombic Lysozyme Crystals Obtained at High pH

    SciTech Connect

    Aldabaibeh, Naser; Jones, Matthew J.; Myerson, Allan S.; Ulrich, Joachim

    2009-07-06

    The high pH region of the phase diagram of lysozyme with NaCl as a precipitant was determined. In this region of the phase diagram, lysozyme crystallizes in one of two different orthorhombic modifications, the low and high temperature orthorhombic modifications. The solubility of two modifications was measured at different temperatures, pH values, and NaCl concentrations. Both modifications show a similar dependence on the solution conditions where solubility increases with temperature and decreases with pH and NaCl concentration. The transition temperature between the two modifications was determined from the solubility curves and was shown to increase with pH and NaCl concentration. At pH values close to the isoelectric point (pH 11), the transition temperature becomes independent of NaCl concentration.

  20. On the relative stability of orthorhombic and hcp phases of beryllium at high pressures

    NASA Astrophysics Data System (ADS)

    Palanivel, B.; Rao, R. S.; Godwal, B. K.; Sikka, S. K.

    2000-10-01

    High-pressure electronic properties of Be have been investigated theoretically by means of ab initio electronic structure calculations. The calculations have been carried out by the semi-relativistic full-potential, linear muffin-tin orbital (FPLMTO) method, within the local density approximation. The crystal structure stability among the hcp, bcc and orthorhombic (distorted hcp) phases has been studied as a function of compression. The bcc structure is found to be energetically stable at pressures above 180 GPa. From the results of our calculations, the orthorhombic phase cannot occur as an intermediate phase between the ambient pressure hcp phase and the high-pressure bcc structure. Our work thus suggests the need for more accurate high-pressure x-ray data.

  1. Superconductivity in MgPtSi: An orthorhombic variant of MgB2

    NASA Astrophysics Data System (ADS)

    Kudo, Kazutaka; Fujimura, Kazunori; Onari, Seiichiro; Ota, Hiromi; Nohara, Minoru

    2015-05-01

    A ternary compound, MgPtSi, was synthesized by solid-state reaction. An examination of the compound by powder x-ray diffraction revealed that it crystallizes in the orthorhombic TiNiSi-type structure with the P n m a space group. The structure comprises alternately stacked layers of Mg and PtSi honeycomb network, which is reminiscent of MgB2, and the buckling of the honeycomb network causes orthorhombic distortion. Electrical and magnetic studies revealed that MgPtSi exhibited superconductivity with a transition temperature of 2.5 K. However, its isostructural compounds, namely, MgRhSi and MgIrSi, were not found to exhibit superconductivity.

  2. Spontaneous Ferroelectric Order in a Bent-Core Smectic Liquid Crystal of Fluid Orthorhombic Layers

    SciTech Connect

    R Reddy; C Zhu; R Shao; E Korblova; T Gong; Y Shen; M Glaser; J Maclennan; D Walba; N Clark

    2011-12-31

    Macroscopic polarization density, characteristic of ferroelectric phases, is stabilized by dipolar intermolecular interactions. These are weakened as materials become more fluid and of higher symmetry, limiting ferroelectricity to crystals and to smectic liquid crystal stackings of fluid layers. We report the SmAP{sub F}, the smectic of fluid polar orthorhombic layers that order into a three-dimensional ferroelectric state, the highest-symmetry layered ferroelectric possible and the highest-symmetry ferroelectric material found to date. Its bent-core molecular design employs a single flexible tail that stabilizes layers with untilted molecules and in-plane polar ordering, evident in monolayer-thick freely suspended films. Electro-optic response reveals the three-dimensional orthorhombic ferroelectric structure, stabilized by silane molecular terminations that promote parallel alignment of the molecular dipoles in adjacent layers.

  3. Large rotating magnetocaloric effect in the orthorhombic DyMnO3 single crystal

    NASA Astrophysics Data System (ADS)

    Balli, M.; Mansouri, S.; Jandl, S.; Fournier, P.; Dimitrov, D. Z.

    2016-07-01

    A large magnetocaloric effect can be obtained around TN, Dy ̴8 K simply by spinning the orthorhombic DyMnO3 single crystal within the cb-plane in a constant magnetic field, instead of the standard magnetization-demagnetization process. Under 7 T, the maximum rotating entropy change (-ΔSR, cb) and the associated adiabatic temperature change (ΔTad, cb) are 16.3 J/kg K and 11 K, respectively. The corresponding refrigerant capacity is 440 J/kg, with no thermal and field hysteresis losses. Our findings show that the orthorhombic DyMnO3 could be used as a good refrigerant in more compact and efficient cryomagnetocaloric refrigerators.

  4. The variability residual stresses of thick superconductor films during orthorhombic to tetragonal transformation

    SciTech Connect

    Wu, W.; Danyluk, S.; Lanagan, M.T.; Poeppel, R.B.

    1992-04-01

    YBa{sub 2}Cu{sub 3}O{sub x} thick films have been deposited by spray pyrolysis of a sol-gel on 10 cm diameter polycrystalline MgO wafers. The film thickness was built up in layers of approximately 1 {mu}m thick. The in-plane residual stresses were measured by an optical interferometry (shadow moire) method as a function of film structure. In-plane residual stress maps over the area of the wafer have been obtained. The average stress of the 5 {mu}m orthorhombic phase was 0.84 GPa. As the film transforms from the orthorhombic to the tetragonal structure, the tensile stresses decreased by 0.5 GPa.

  5. The variability residual stresses of thick superconductor films during orthorhombic to tetragonal transformation

    SciTech Connect

    Wu, W.; Danyluk, S. . Dept. of Civil Engineering, Mechanics, and Metallurgy); Lanagan, M.T.; Poeppel, R.B. )

    1992-01-01

    YBa{sub 2}Cu{sub 3}O{sub x} thick films have been deposited by spray pyrolysis of a sol-gel on 10 cm diameter polycrystalline MgO wafers. The film thickness was built up in layers of approximately 1 {mu}m thick. The in-plane residual stresses were measured by an optical interferometry (shadow moire) method as a function of film structure. In-plane residual stress maps over the area of the wafer have been obtained. The average stress of the 5 {mu}m orthorhombic phase was 0.84 GPa. As the film transforms from the orthorhombic to the tetragonal structure, the tensile stresses decreased by 0.5 GPa.

  6. Lattice dynamics of proton conductor SrZrO{sub 3} in orthorhombic phase

    SciTech Connect

    Sharma, Anupam Deep; Sinha, M. M.

    2014-04-24

    In the this paper, we are presenting the results of our theoretical investigation on the zone centre phonon frequencies and phonon dispersion relation of SrZrO{sub 3} in its orthorhombic phase by using lattice dynamical simulation method based on short range force constant model to understand the role of phonon in this system. The calculations involves interatomic force constants upto third neighbour. The calculated zone centre phonon frequencies in Raman mode, agrees well with available existing results.

  7. Epitaxial technology for low cost solar cells

    NASA Technical Reports Server (NTRS)

    Kressel, H.; Raccah, P. M.

    1975-01-01

    Epitaxial solar cell structures on low cost silicon substrates are compared to direct diffusion substrates. Dislocation density in the epitaxial layers is found to be significantly lower than that of the substrate material. The saturation current density of diodes epitaxially formed on the substrate is commonly 2 to 3 orders of magnitude lower than for diodes formed by direct diffusion. Solar cells made epitaxially are substantially better than those made by direct diffusion into similar material.

  8. Secondary cell with orthorhombic alkali metal/manganese oxide phase active cathode material

    DOEpatents

    Doeff, M.M.; Peng, M.Y.; Ma, Y.; Visco, S.J.; DeJonghe, L.C.

    1996-09-24

    An alkali metal manganese oxide secondary cell is disclosed which can provide a high rate of discharge, good cycling capabilities, good stability of the cathode material, high specific energy (energy per unit of weight) and high energy density (energy per unit volume). The active material in the anode is an alkali metal and the active material in the cathode comprises an orthorhombic alkali metal manganese oxide which undergoes intercalation and deintercalation without a change in phase, resulting in a substantially linear change in voltage with change in the state of charge of the cell. The active material in the cathode is an orthorhombic structure having the formula M{sub x}Z{sub y}Mn{sub (1{minus}y)}O{sub 2}, where M is an alkali metal; Z is a metal capable of substituting for manganese in the orthorhombic structure such as iron, cobalt or titanium; x ranges from about 0.2 in the fully charged state to about 0.75 in the fully discharged state, and y ranges from 0 to 60 atomic %. Preferably, the cell is constructed with a solid electrolyte, but a liquid or gelatinous electrolyte may also be used in the cell. 11 figs.

  9. High temperature far-infrared dynamics of orthorhombic NdMnO3: emissivity and reflectivity.

    PubMed

    Massa, Néstor E; del Campo, Leire; Meneses, Domingos De Sousa; Echegut, Patrick; Martínez-Lope, María Jesús; Alonso, José Antonio

    2013-06-12

    We report on near normal far- and mid-infrared emission and reflectivity of NdMnO3 perovskite from room temperature to sample decomposition above 1800 K. At 300 K the number of infrared active phonons is in close agreement with the 25 calculated for the orthorhombic D(2h)(16)-Pbnm (Z = 4) space group. Their number gradually decreases as we approach the temperature of orbital disorder at ~1023 K where the orthorhombic O' lower temperature cooperative phase coexists with the cubic orthorhombic O. At above ~1200 K, the three infrared active phonons coincide with that expected for cubic Pm-3m (Z = 1) in the high temperature insulating regime. Heating samples in dry air triggers double exchange conductivity by Mn(3+) and Mn(4+) ions and a small polaron mid-infrared band. Fits to the optical conductivity single out the octahedral antisymmetric and symmetric vibrational modes as the main phonons in the electron-phonon interactions at 875 K. For 1745 K, it is enough to consider the symmetric stretching internal mode. An overdamped defect induced Drude component is clearly outlined at the highest temperatures. We conclude that rare earth manganite eg electrons are prone to spin, charge, orbital, and lattice couplings in an intrinsic orbital distorted perovskite lattice, favoring embryonic low energy collective excitations.

  10. Secondary cell with orthorhombic alkali metal/manganese oxide phase active cathode material

    DOEpatents

    Doeff, Marca M.; Peng, Marcus Y.; Ma, Yanping; Visco, Steven J.; DeJonghe, Lutgard C.

    1996-01-01

    An alkali metal manganese oxide secondary cell is disclosed which can provide a high rate of discharge, good cycling capabilities, good stability of the cathode material, high specific energy (energy per unit of weight) and high energy density (energy per unit volume). The active material in the anode is an alkali metal and the active material in the cathode comprises an orthorhombic alkali metal manganese oxide which undergoes intercalation and deintercalation without a change in phase, resulting in a substantially linear change in voltage with change in the state of charge of the cell. The active material in the cathode is an orthorhombic structure having the formula M.sub.x Z.sub.y Mn.sub.(1-y) O.sub.2, where M is an alkali metal; Z is a metal capable of substituting for manganese in the orthorhombic structure such as iron, cobalt or titanium; x ranges from about 0.2 in the fully charged state to about 0.75 in the fully discharged state, and y ranges from 0 to 60 atomic %. Preferably, the cell is constructed with a solid electrolyte, but a liquid or gelatinous electrolyte may also be used in the cell.

  11. High-temperature scintillation properties of orthorhombic Gd2Si2O7 aiming at well logging

    NASA Astrophysics Data System (ADS)

    Tsubota, Youichi; Kaneko, Junichi H.; Higuchi, Mikio; Nishiyama, Shusuke; Ishibashi, Hiroyuki

    2015-06-01

    Scintillation and luminescence properties of orthorhombic Gd2Si2O7:Ce (GPS:Ce) single-crystal scintillators were investigated for temperatures ranging from room temperature (RT) to 573 K. Orthorhombic GPS crystals were grown by using a top-seeded solution growth (TSSG) method. The scintillation light yield of the orthorhombic GPS at RT was ∼2.9 times higher than that of Gd2SiO5:Ce (GSO). The light yield values of the orthorhombic GPS (Ce = 2.5%) were almost unchanged for temperatures ranging from RT to 523 K, and at 523 K, were higher than twice the light yield of GSO at RT. These GPS scintillators are expected to contribute to oil exploration at greater depths.

  12. Temperature synchronized molecular layer epitaxy

    NASA Astrophysics Data System (ADS)

    Kurabayashi, T.; Nishizawa, J.

    1994-12-01

    This paper reports the first results on a modified molecular layer epitaxy (MLE) technique to deposit epitaxial GaAs films by changing the substrate temperature for alternate TEG (or TMG) and AsH 3 injection. This method of temperature synchronized molecular layer epitaxy (TSMLE) is a new concept for MLE and atomic layer epitaxy (ALE). The growth rates and the doping phenomena showed different characteristics to the conventional methods which were performed at a constant temperature. This method was effective not only for the study of monolayer growth, but also for device application, especially for the heavily doped p-type layer of which carrier concentration is 10 20 cm -3 order. Carbon doped p-type layer was achieved by TMG-AsH 3 TSMLE. The carbon concentration increased by decreasing the temperature during AsH 3 injection and by increasing the temperature during TMG injection. Zn-doped layer was achieved by TEG-AsH 3 TSMLE using DEZn as a dopant gas for p-type layer fabrication. To doped heavily, DEZn injected after AsH 3 injection and the temperature during AsH 3 injection had a suitable value at 393°C.

  13. Observation of lattice defects in orthorhombic hen-egg white lysozyme crystals with laser scattering tomography

    NASA Astrophysics Data System (ADS)

    Sato, K.; Fukuba, Y.; Mitsuda, T.; Hirai, K.; Moriya, K.

    1992-08-01

    The effectivity of using laser scattering tomography (LST) as a nondestructive technique for finding lattice defects in protein crystals is demonstrated using an orthorhombic egg-white lysozyme crystal grown by a batch method. It was found that LST figures could be observed from the crystal portions where no defects were detectable by the naked eye or optical microscopy; the number of microdefects revealed in the LST patterns increased on approaching the crystal surface. Two types of defects were differentiated by polarization analysis: (1) point-type defects, assumed to be microdefects such as vacancies, precipitates, or impurities, and (2) bulk-type defects, assumed to correspond to inclusions.

  14. 93Nb Nuclear Quadrupole Resonance in Orthorhombic Phase of Niobium Pentabromide

    NASA Astrophysics Data System (ADS)

    Okubo, Noriaki; Abe, Yoshihito

    1982-05-01

    The 93Nb NQR has been investigated in one phase of NbBr5 which was identified to be orthorhombic by the X-ray analysis. The resonance frequencies have been measured between 4.2 K and 423 K, its melting point. The coupling constant showed a positive temperature dependence up to melting point. The temperature dependence of the coupling constant is compared between NbBr5 and NbCl5 from the view point of π-bond character.

  15. Temperature and Pressure Sensors Based on Spin-Allowed Broadband Luminescence of Doped Orthorhombic Perovskite Structures

    NASA Technical Reports Server (NTRS)

    Eldridge, Jeffrey I. (Inventor); Chambers, Matthew D. (Inventor)

    2014-01-01

    Systems and methods that are capable of measuring pressure or temperature based on luminescence are discussed herein. These systems and methods are based on spin-allowed broadband luminescence of sensors with orthorhombic perovskite structures of rare earth aluminates doped with chromium or similar transition metals, such as chromium-doped gadolinium aluminate. Luminescence from these sensors can be measured to determine at least one of temperature or pressure, based on either the intense luminescence of these sensors, even at high temperatures, or low temperature techniques discussed herein.

  16. Surface morphology of orthorhombic Mo2C catalyst and high coverage hydrogen adsorption

    NASA Astrophysics Data System (ADS)

    Wang, Tao; Tian, Xinxin; Yang, Yong; Li, Yong-Wang; Wang, Jianguo; Beller, Matthias; Jiao, Haijun

    2016-09-01

    High coverage hydrogen adsorption on twenty two terminations of orthorhombic Mo2C has been systematically studied by using density functional theory and ab initio thermodynamics. Hydrogen stable coverage on the surfaces highly depends on temperatures and H2 partial pressure. The estimated hydrogen desorption temperatures under ultra-high vacuum condition on Mo2C are in reasonable agreement with the available temperature-programmed desorption data. Obviously, hydrogen adsorption can affect the surface stability and therefore modify the surface morphology of Mo2C. Upon increasing the chemical potential of hydrogen which can be achieved by increasing the H2 partial pressure and/or decreasing the temperature, the proportions of the (001), (010), (011) and (100) surfaces increase, while those of the (101), (110) and (111) surfaces decrease. Among these surfaces, the (100) surface is most sensitive upon hydrogen adsorption and the (111) surface is most exposed under a wide range of conditions. Our study clearly reveals the role of hydrogen on the morphology of orthorhombic Mo2C catalyst in conjugation with hydro-treating activity.

  17. Electron paramagnetic resonance identification of the orthorhombic iron-indium pair in silicon

    NASA Astrophysics Data System (ADS)

    Gehlhoff, W.; Emanuelsson, P.; Omling, P.; Grimmeiss, H. G.

    1990-04-01

    A different EPR spectrum (Lu4) in silicon doped with indium and iron is reported together with an EPR spectrum previously observed by Ludwig and Woodbury. The two spectra show orthorhombic symmetry and are found to originate from the same FeIn pair. They are explained as transitions within the two Kramers doublets of an S=3/2 system with a zero-field splitting which is very large compared with the microwave energy. The ratio between the orthorhombic and axial fine-structure parameters is determined to be E/D=0.052, and the g values of the defect were found to be gz=2.09, gy=2.05, and gx=2.07(z∥<100>, and x,y∥<110>). The temperature dependence of the intensities of both spectra shows that the lower doublet corresponds to Lu4 and the upper one to the previously observed spectrum. Contrary to what has hitherto been believed, this observation implies that the axial fine-structure parameter has the same sign for the iron-indium pair as for the iron-aluminum and iron-gallium pairs.

  18. Epitaxial silicon growth for solar cells

    NASA Technical Reports Server (NTRS)

    Daiello, R. V.; Robinson, P. H.; Richman, D.

    1979-01-01

    The epitaxial procedures, solar cell fabrication, and evaluation techniques are described. The development of baseline epitaxial solar cell structures grown on high quality conventional silicon substrates is discussed. Diagnostic layers and solar cells grown on four potentially low cost silicon substrates are considered. The crystallographic properties of such layers and the performance of epitaxially grown solar cells fabricated on these materials are described. An advanced epitaxial reactor, the rotary disc, is described along with the results of growing solar cell structures of the baseline type on low cost substrates. The add on cost for the epitaxial process is assessed and the economic advantages of the epitaxial process as they relate to silicon substrate selection are examined.

  19. Oxidation of epitaxial Ce films

    NASA Astrophysics Data System (ADS)

    Vescovo, E.; Carbone, C.

    1996-02-01

    Single-crystal Ce films of more than 300 Å thickness have been epitaxially grown on W(110). Their interaction with molecular oxygen at room temperature has been studied by angle-resolved photoemission, low-energy electron diffraction, and Auger spectroscopy. As a function of the oxygen exposure, the reaction is found to proceed through a sequence of three distinct stages: (i) ordered dissociative surface adsorption; (ii) formation of an ordered Ce2O3-like surface oxide; and (iii) gradual conversion of the sesquioxide into a disordered surface dioxide CeO2-x. A structurally different Ce2O3 oxide is obtained after high oxygen exposures followed by heating at 450 K. The formation of the epitaxial surface sesquioxides is favored by the good lattice match with the Ce substrate. The same type of structural relation might lead to the formation of ordered sesquioxides on other rare-earth surfaces exposing hexagonal planes.

  20. Chemical Vapor Deposition Epitaxy an Patternless and Patterned Substrates.

    ERIC Educational Resources Information Center

    Takoudis, Christos G.

    1990-01-01

    Discusses chemical vapor deposition epitaxy on patternless and patterned substrates for an electronic materials processing course. Describes the processs types and features of epitaxy. Presents some potential problems of epitaxy. Lists 38 references. (YP)

  1. Recent developments in droplet epitaxy

    SciTech Connect

    Mano, Takaaki; Jo, Masafumi; Kuroda, Takashi; Abbarchi, Marco; Noda, Takeshi; Sakoda, Kazuaki

    2014-05-15

    The droplet epitaxy allows for self-assembly of lattice-matched GaAs quantum dots (QDs) with high quality and high uniformity. In this article, we show our efforts to realize the GaAs QDs with excellent optical properties. After the optimization of the several growth processes, we achieved current-injection lasing in the GaAs QDs. In addition, formation of further advanced nanostructure is presented.

  2. Diluted orbital degeneracy and large orthorhombic distortions in ferrimagnetic spinel CuxMn3 -xO4

    NASA Astrophysics Data System (ADS)

    Lee, Kee Hwan; Chang, Hun; Hwang, In Yong; Chung, Jae-Ho; Kang, Hyun Wook; Kim, Su Jae; Lee, Seongsu

    2015-02-01

    We report large orthorhombic distortions in the ferrimagnetic tetragonal (c >a ) spinel CuxMn3 -xO4 stabilized by a few percent of Cu doping. The orthorhombic strains of the ferrimagnetic phases increased linearly to the doping and reached up to ɛ ≈8.2 ×10-3 for x =0.19 , which is three times larger than the saturated value under external magnetic fields. For high doping (x ≳0.17 ), the distortions first appeared in the paramagnetic phases and underwent further enhancement simultaneously with the onset of the noncollinear ferrimagnetic ordering. We present the rich magnetostructural phase diagram of CuxMn3 -xO4 , and argue that the diluted t2 orbital degeneracy of Cu2 + under tetrahedral crystal field breaks the global symmetry and triggers the orthorhombic instability inherent in Mn3O4 .

  3. Modulating Magnetic Properties by Tailoring In-Plane Domain Structures in Hexagonal YMnO3 Films.

    PubMed

    Deng, Shiqing; Cheng, Shaobo; Liu, Ming; Zhu, Jing

    2016-09-28

    Periodic structures and the coupling of multiorder parameters in complex oxides heterojunctions can generate exotic properties, of interest both for fundamental researches and for device applications. Here, we report a self-assembling in-plane periodic domain structure, and the resulting rich magnetic states, in a h-YMnO3 thin film fabricated on c-face sapphire substrate. Detailed structural investigations at atomic-level reveal the fashion of alternating domains under tensile or compressive strains separated by a boundary region. Tuned by this in-plane domain structure, the abnormal magnetic properties, such as the ferromagnetic enhancement and the unexpected spin glass state (below ∼38 K), are realized. Moreover, the existence of ferroelectric polarization is confirmed by scanning transmission electron microscopy, which brings in the chances of magnetoelectric coupling effect. These results manifest the close connections between the magnetic properties and such in-plane microstructures, suggesting the possibility of tuning the coupling effects via strain engineering in the hexagonal manganite film. PMID:27608731

  4. The structure and properties of phthalocyanine films grown by the molecular beam epitaxy technique. III. Preparation and characterization of lutetium diphthalocyanine films

    NASA Astrophysics Data System (ADS)

    Hoshi, Hajime; Dann, Anthony J.; Maruyama, Yusei

    1990-06-01

    Two types of epitaxial films of lutetium diphthalocyanine, LuPc2, have been obtained on KBr, LuPc2 /KBr, and on the film of fluoro-bridged aluminum phthalocyanine polymer, (AlPcF)n, on KBr, LuPc2 /(AlPcF)n /KBr, by the molecular beam epitaxy technique. Their structures have been studied by transmission electron microscopy as well as scanning electron microscopy. The phase of LuPc2 /KBr is bidirectionally oriented tetragonal, KBr(100)((10)1/2×(10)1/2) R±27°-LuPc2. The phase of LuPc2 /(AlPcF)n /KBr is predominantly unidirectionally oriented tetragonal, KBr(100)(3×3)R45°-LuPc2 /(AlPcF)n, but some bidirectional orthorhombic phase, KBr(100)C(6×3)R45°-LuPc2 /(AlPcF)n, is also present.

  5. Colloidal nanocrystals of orthorhombic Cu2ZnGeS4: phase-controlled synthesis, formation mechanism and photocatalytic behavior

    NASA Astrophysics Data System (ADS)

    Fan, Cong-Min; Regulacio, Michelle D.; Ye, Chen; Lim, Suo Hon; Lua, Shun Kuang; Xu, Qing-Hua; Dong, Zhili; Xu, An-Wu; Han, Ming-Yong

    2015-02-01

    The orthorhombic polymorph of Cu2ZnGeS4 (CZGS) is a metastable wurtzite-derived phase that can only be prepared in the bulk form by extensive heating at high temperatures (>=790 °C) when using the conventional solid-state reaction route. By employing a facile solution-based synthetic strategy, we were able to obtain phase-pure orthorhombic CZGS in nanocrystalline form at a much lower reaction temperature. Prior to this work, the colloidal synthesis of single-phase orthorhombic CZGS on the nanoscale has never been reported. We find that the use of an appropriate combination of coordinating solvents and precursors is crucial to the sole formation of this metastable phase in solution. A possible formation mechanism is proposed on the basis of our experimental results. Because CZGS consists of environmentally benign metal components, it is regarded as a promising alternative material to the technologically useful yet toxic cadmium-containing semiconductors. The orthorhombic CZGS nanocrystals display strong photon absorption in the visible spectrum and are photocatalytically active in dye degradation under visible-light illumination.The orthorhombic polymorph of Cu2ZnGeS4 (CZGS) is a metastable wurtzite-derived phase that can only be prepared in the bulk form by extensive heating at high temperatures (>=790 °C) when using the conventional solid-state reaction route. By employing a facile solution-based synthetic strategy, we were able to obtain phase-pure orthorhombic CZGS in nanocrystalline form at a much lower reaction temperature. Prior to this work, the colloidal synthesis of single-phase orthorhombic CZGS on the nanoscale has never been reported. We find that the use of an appropriate combination of coordinating solvents and precursors is crucial to the sole formation of this metastable phase in solution. A possible formation mechanism is proposed on the basis of our experimental results. Because CZGS consists of environmentally benign metal components, it is

  6. Intrinsic metastability of orthorhombic HfTiO{sub 4} in thin film hafnia-titania

    SciTech Connect

    Cisneros-Morales, Massiel Cristina; Aita, Carolyn Rubin

    2011-01-31

    Orthorhombic (o) HfTiO{sub 4} is crystallized when sputter deposited hafnia-titania nanolaminates with ultrathin layers and bilayer (HfO{sub 2}){sub 0.5}(TiO{sub 2}){sub 0.5} composition are annealed between 573 and 1173 K. However, o-HfTiO{sub 4} demixes after annealing at 1273 K, a result not predicted from bulk thermodynamics. X-ray diffraction and Raman microscopy are used here to study structural changes as o-HfTiO{sub 4} demixes upon long-term annealing at 1273 K into Ti-doped monoclinic HfO{sub 2} and Hf-doped rutile TiO{sub 2}. We conclude that o-HfTiO{sub 4} crystallized at low temperature is intrinsically metastable. A space group symmetry analysis shows that demixing can be accomplished by a continuous phase transition chain.

  7. Enhancement of the antimicrobial properties of orthorhombic molybdenum trioxide by thermal induced fracturing of the hydrates.

    PubMed

    Shafaei, Shahram; Van Opdenbosch, Daniel; Fey, Tobias; Koch, Marcus; Kraus, Tobias; Guggenbichler, Josef Peter; Zollfrank, Cordt

    2016-01-01

    The oxides of the transition metal molybdenum exhibit excellent antimicrobial properties. We present the preparation of molybdenum trioxide dihydrate (MoO3 × 2H2O) by an acidification method and demonstrate the thermal phase development and morphological evolution during and after calcination from 25 °C to 600 °C. The thermal dehydration of the material was found to proceed in two steps. Microbiological roll-on tests using Staphylococcus aureus, Escherichia coli and Pseudomonas aeruginosa were performed and exceptional antimicrobial activities were determined for anhydrous samples with orthorhombic lattice symmetry and a large specific surface area. The increase in the specific surface area is due to crack formation and to the loss of the hydrate water after calcination at 300 °C. The results support the proposed antimicrobial mechanism for transition metal oxides, which based on a local acidity increase as a consequence of the augmented specific surface area.

  8. Quasi-one-dimensional electronic structure in orthorhombic RbC[sub 60

    SciTech Connect

    Chauvet, O.; Oszlanyi, G.; Forro, L. ); Stephens, P.W. ); Tegze, M.; Faigel, G.; Janossy, A. )

    1994-04-25

    X-ray diffraction studies show that the stable phase of the alkali fullerene RbC[sub 60] is orthorhombic ([ital o]-RbC[sub 60]) below 350 K. C[sub 60] molecules form chains along [bold a] with an unusually short spacing of 9.12 A and magnetic properties suggest that [ital o]-RbC[sub 60] is a quasi-1D metal with a transition to a spin density wave ground state at 50 K. The high temperature fcc phase of RbC[sub 60] may be stabilized below 300 K by quenching from 500 K; it is paramagnetic above 300 K and transforms into a nonmagnetic ground state beween 300 and 250 K.

  9. Failure development around a borehole in an orthorhombic thermo-elastoplastic rock medium

    NASA Astrophysics Data System (ADS)

    Piłacik, Alicja; Dąbrowski, Marcin

    2016-04-01

    The elastic anisotropy of a rock medium is one of the main factors affecting stress distribution around the borehole. It governs the initiation and propagation of the technologically induced compressive and tensile failure zones, and reopening of natural mechanical discontinuities. We conducted a two-dimensional analysis of failure around a pressurized horizontal borehole in an orthorhombic elastic rock medium subject to variable far-field loads. The analytical solution to the thermoelastic problem was derived. An elastoplastic finite element method code was developed using MILAMIN platform (milamin.org) and implemented in MATLAB. Various yield functions were used, including von Mises, Mohr-Coulomb, Drucker-Prager and Hoek-Brown failure criteria. The analysis was augmented by introducing rock heterogeneities and discrete mechanical discontinuities in the vicinity of the borehole.

  10. Body-Centered Orthorhombic C16 : A Novel Topological Node-Line Semimetal

    NASA Astrophysics Data System (ADS)

    Wang, Jian-Tao; Weng, Hongming; Nie, Simin; Fang, Zhong; Kawazoe, Yoshiyuki; Chen, Changfeng

    2016-05-01

    We identify by ab initio calculations a novel topological semimetal carbon phase in all-s p2 bonding networks with a 16-atom body-centered orthorhombic unit cell, termed bco-C16. Total-energy calculations show that bco-C16 is comparable to solid fcc-C60 in energetic stability, and phonon and molecular dynamics simulations confirm its dynamical stability. This all-s p2 carbon allotrope can be regarded as a three-dimensional modification of graphite, and its simulated x-ray diffraction (XRD) pattern matches well a previously unexplained diffraction peak in measured XRD spectra of detonation and chimney soot, indicating its presence in the specimen. Electronic band structure calculations reveal that bco-C16 is a topological node-line semimetal with a single nodal ring. These findings establish a novel carbon phase with intriguing structural and electronic properties of fundamental significance and practical interest.

  11. Enhancement of the antimicrobial properties of orthorhombic molybdenum trioxide by thermal induced fracturing of the hydrates.

    PubMed

    Shafaei, Shahram; Van Opdenbosch, Daniel; Fey, Tobias; Koch, Marcus; Kraus, Tobias; Guggenbichler, Josef Peter; Zollfrank, Cordt

    2016-01-01

    The oxides of the transition metal molybdenum exhibit excellent antimicrobial properties. We present the preparation of molybdenum trioxide dihydrate (MoO3 × 2H2O) by an acidification method and demonstrate the thermal phase development and morphological evolution during and after calcination from 25 °C to 600 °C. The thermal dehydration of the material was found to proceed in two steps. Microbiological roll-on tests using Staphylococcus aureus, Escherichia coli and Pseudomonas aeruginosa were performed and exceptional antimicrobial activities were determined for anhydrous samples with orthorhombic lattice symmetry and a large specific surface area. The increase in the specific surface area is due to crack formation and to the loss of the hydrate water after calcination at 300 °C. The results support the proposed antimicrobial mechanism for transition metal oxides, which based on a local acidity increase as a consequence of the augmented specific surface area. PMID:26478404

  12. Thermal evolution of the crystal structure of the orthorhombic perovskite LaFeO3

    NASA Astrophysics Data System (ADS)

    Dixon, Charlotte A. L.; Kavanagh, Christopher M.; Knight, Kevin S.; Kockelmann, Winfried; Morrison, Finlay D.; Lightfoot, Philip

    2015-10-01

    The thermal evolution of the crystal structure of the prototypical orthorhombic perovskite LaFeO3 has been studied in detail by powder neutron diffraction in the temperature range 25

  13. Body-Centered Orthorhombic C_{16}: A Novel Topological Node-Line Semimetal.

    PubMed

    Wang, Jian-Tao; Weng, Hongming; Nie, Simin; Fang, Zhong; Kawazoe, Yoshiyuki; Chen, Changfeng

    2016-05-13

    We identify by ab initio calculations a novel topological semimetal carbon phase in all-sp^{2} bonding networks with a 16-atom body-centered orthorhombic unit cell, termed bco-C_{16}. Total-energy calculations show that bco-C_{16} is comparable to solid fcc-C_{60} in energetic stability, and phonon and molecular dynamics simulations confirm its dynamical stability. This all-sp^{2} carbon allotrope can be regarded as a three-dimensional modification of graphite, and its simulated x-ray diffraction (XRD) pattern matches well a previously unexplained diffraction peak in measured XRD spectra of detonation and chimney soot, indicating its presence in the specimen. Electronic band structure calculations reveal that bco-C_{16} is a topological node-line semimetal with a single nodal ring. These findings establish a novel carbon phase with intriguing structural and electronic properties of fundamental significance and practical interest. PMID:27232027

  14. Epitaxial growth of CZT(S,Se) on silicon

    DOEpatents

    Bojarczuk, Nestor A.; Gershon, Talia S.; Guha, Supratik; Shin, Byungha; Zhu, Yu

    2016-03-15

    Techniques for epitaxial growth of CZT(S,Se) materials on Si are provided. In one aspect, a method of forming an epitaxial kesterite material is provided which includes the steps of: selecting a Si substrate based on a crystallographic orientation of the Si substrate; forming an epitaxial oxide interlayer on the Si substrate to enhance wettability of the epitaxial kesterite material on the Si substrate, wherein the epitaxial oxide interlayer is formed from a material that is lattice-matched to Si; and forming the epitaxial kesterite material on a side of the epitaxial oxide interlayer opposite the Si substrate, wherein the epitaxial kesterite material includes Cu, Zn, Sn, and at least one of S and Se, and wherein a crystallographic orientation of the epitaxial kesterite material is based on the crystallographic orientation of the Si substrate. A method of forming an epitaxial kesterite-based photovoltaic device and an epitaxial kesterite-based device are also provided.

  15. The scattering potential of partial derivative wavefields in 3D elastic orthorhombic media: An inversion prospective

    NASA Astrophysics Data System (ADS)

    Oh, Ju-Won; Alkhalifah, Tariq

    2016-07-01

    Multi-parameter full waveform inversion (FWI) applied to an elastic orthorhombic model description of the subsurface requires in theory a nine-parameter representation of each pixel of the model. Even with optimal acquisition on the Earth surface that includes large offsets, full azimuth, and multi component sensors, the potential for tradeoff between the elastic orthorhombic parameters are large. The first step to understanding such trade-off is analysing the scattering potential of each parameter, and specifically, its scattering radiation patterns. We investigate such radiation patterns for diffraction and for scattering from a horizontal reflector considering a background isotropic model. The radiation patterns show considerable potential for trade-off between the parameters and the potentially limited resolution in their recovery. The radiation patterns of C11, C22 and C33 are well separated so that we expect to recover these parameters with limited trade-offs. However, the resolution of their recovery represented by recovered range of model wavenumbers varies between these parameters. We can only invert for the short wavelength components (reflection) of C33 while we can mainly invert for the long wavelength components (transmission) of the elastic coefficients C11 and C22 if we have large enough offsets. The elastic coefficients C13, C23 and C12 suffer from strong trade-offs with C55, C44 and C66, respectively. The trade-offs between C13 and C55, as well as C23 and C44, can be partially mitigated if we acquire P-SV and SV-SV waves. However, to reduce the trade-offs between C12 and C66, we require credible SH-SH waves. The analytical radiation patterns of the elastic constants are supported by numerical gradients of these parameters.

  16. The scattering potential of partial derivative wavefields in 3-D elastic orthorhombic media: an inversion prospective

    NASA Astrophysics Data System (ADS)

    Oh, Ju-Won; Alkhalifah, Tariq

    2016-09-01

    Multiparameter full waveform inversion (FWI) applied to an elastic orthorhombic model description of the subsurface requires in theory a nine-parameter representation of each pixel of the model. Even with optimal acquisition on the Earth surface that includes large offsets, full azimuth, and multicomponent sensors, the potential for trade-off between the elastic orthorhombic parameters are large. The first step to understanding such trade-off is analysing the scattering potential of each parameter, and specifically, its scattering radiation patterns. We investigate such radiation patterns for diffraction and for scattering from a horizontal reflector considering a background isotropic model. The radiation patterns show considerable potential for trade-off between the parameters and the potentially limited resolution in their recovery. The radiation patterns of C11, C22, and C33 are well separated so that we expect to recover these parameters with limited trade-offs. However, the resolution of their recovery represented by recovered range of model wavenumbers varies between these parameters. We can only invert for the short wavelength components (reflection) of C33 while we can mainly invert for the long wavelength components (transmission) of the elastic coefficients C11 and C22 if we have large enough offsets. The elastic coefficients C13, C23, and C12 suffer from strong trade-offs with C55, C44, and C66, respectively. The trade-offs between C13 and C55, as well as C23 and C44, can be partially mitigated if we acquire P-SV and SV-SV waves. However, to reduce the trade-offs between C12 and C66, we require credible SH-SH waves. The analytical radiation patterns of the elastic constants are supported by numerical gradients of these parameters.

  17. Metal-insulator transition in epitaxial perovskite SrIrO3 thin films via strain

    NASA Astrophysics Data System (ADS)

    Gruenewald, J. H.; Terzic, J.; Nichols, J.; Cao, G.; Seo, S. S. A.

    2014-03-01

    Iridates have drawn considerable interest due to their exotic phases arising from the interplay of the strong spin-orbit interaction and the electronic correlation. Here we will discuss our experimental investigations of the electronic properties of epitaxially strained SrIrO3 thin-films. The orthorhombic perovskite crystal phase of SrIrO3 is synthesized as a thin film (~ 20 nm) on various substrates of (LaAlO3)0.3-(Sr2AlTaO6)0.7, SrTiO3, GdScO3, and MgO using pulsed laser deposition. We have observed that when the in-plane lattice parameters are tuned from tensile to compressive strain, the electronic behavior of the strained SrIrO3 thin-films changes from metallic to insulating. All samples have sheet resistance below 13 k Ω/ □, and the insulating samples were fit using the Mott variable-range-hopping equation at low temperatures (< 15 K), which is believed to be the conducing mechanism of Anderson localization at finite temperature. The strain-dependent metal-insulator transition in epitaxial perovskite SrIrO3 thin-films offers an important insight into the electronic structure of these strongly correlated, spin-orbit-coupled materials. This work was supported by grants EPS-0814194, DMR-0856234, DMR-1265162, and KSEF-148-502-12-303.

  18. Strain tuning of electronic structure in Bi4Ti3O12-LaCoO3 epitaxial thin films

    DOE PAGES

    Choi, Woo Seok; Lee, Ho Nyung

    2015-05-08

    In this study, we investigated the crystal and electronic structures of ferroelectric Bi4Ti3O12 single-crystalline thin films site-specifically substituted with LaCoO3 (LCO). The epitaxial films were grown by pulsed laser epitaxy on NdGaO3 and SrTiO3 substrates to vary the degree of strain. With increasing the LCO substitution, we observed a systematic increase in the c-axis lattice constant of the Aurivillius phase related with the modification of pseudo-orthorhombic unit cells. These compositional and structural changes resulted in a systematic decrease in the band gap, i.e., the optical transition energy between the oxygen 2p and transition-metal 3d states, based on a spectroscopic ellipsometrymore » study. In particular, the Co 3d state seems to largely overlap with the Ti t2g state, decreasing the band gap. Interestingly, the applied tensile strain facilitates the band-gap narrowing, demonstrating that epitaxial strain is a useful tool to tune the electronic structure of ferroelectric transition-metal oxides.« less

  19. Growth of (111)-oriented epitaxial and textured ferroelectric Y-doped HfO2 films for downscaled devices

    NASA Astrophysics Data System (ADS)

    Katayama, Kiliha; Shimizu, Takao; Sakata, Osami; Shiraishi, Takahisa; Nakamura, Syogo; Kiguchi, Takanori; Akama, Akihiro; Konno, Toyohiko J.; Uchida, Hiroshi; Funakubo, Hiroshi

    2016-09-01

    In this study, the growth of (111)-oriented epitaxial and textured YO1.5-HfO2 (0.07:0.93 ratio) films using the pulsed laser deposition method is presented. Epitaxial films were prepared on ITO//(111)yttria-stabilized zirconia (YSZ) substrates (ITO: Sn-doped In2O3; YSZ: yttria-stabilized zirconia), while textured films were prepared on (111)Pt/TiOx/SiO2//Si substrates with and without an ITO buffer layer via the grain on grain coherent growth. Inserting an ITO layer increased the volume fraction of the ferroelectric orthorhombic phase. Both the epitaxial and uniaxially textured films exhibited similar ferroelectricity with a remanent polarization of around 10 μC/cm2 and a coercive field of 1.9 to 2.0 MV/cm. These results present us with a way of obtaining stable and uniform ferroelectric properties for each grain and device cells consisting of a small number of grains. This opens the door for ultimately miniaturized ferroelectric devices, such as ferroelectric field effect transistors with small gate length and resistive random access memory using ferroelectric tunnel junctions.

  20. Epitaxial growth of europium monoxide on diamond

    SciTech Connect

    Melville, A.; Heeg, T.; Mairoser, T.; Schmehl, A.; Fischer, M.; Gsell, S.; Schreck, M.; Awschalom, D. D.; Holländer, B.; Schubert, J.; Schlom, D. G.

    2013-11-25

    We report the epitaxial integration of phase-pure EuO on both single-crystal diamond and on epitaxial diamond films grown on silicon utilizing reactive molecular-beam epitaxy. The epitaxial orientation relationship is (001) EuO ‖ (001) diamond and [110] EuO ‖[100] diamond. The EuO layer is nominally unstrained and ferromagnetic with a transition temperature of 68 ± 2 K and a saturation magnetization of 5.5 ± 0.1 Bohr magnetons per europium ion on the single-crystal diamond, and a transition temperature of 67 ± 2 K and a saturation magnetization of 2.1 ± 0.1 Bohr magnetons per europium ion on the epitaxial diamond film.

  1. Molecular-Beam-Epitaxy Program

    NASA Technical Reports Server (NTRS)

    Sparks, Patricia D.

    1988-01-01

    Molecular Beam Epitaxy (MBE) computer program developed to aid in design of single- and double-junction cascade cells made of silicon. Cascade cell has efficiency 1 or 2 percent higher than single cell, with twice the open-circuit voltage. Input parameters include doping density, diffusion lengths, thicknesses of regions, solar spectrum, absorption coefficients of silicon (data included for 101 wavelengths), and surface recombination velocities. Results include maximum power, short-circuit current, and open-circuit voltage. Program written in FORTRAN IV.

  2. Colloidal nanocrystals of orthorhombic Cu2ZnGeS4: phase-controlled synthesis, formation mechanism and photocatalytic behavior.

    PubMed

    Fan, Cong-Min; Regulacio, Michelle D; Ye, Chen; Lim, Suo Hon; Lua, Shun Kuang; Xu, Qing-Hua; Dong, Zhili; Xu, An-Wu; Han, Ming-Yong

    2015-02-21

    The orthorhombic polymorph of Cu2ZnGeS4 (CZGS) is a metastable wurtzite-derived phase that can only be prepared in the bulk form by extensive heating at high temperatures (≥790 °C) when using the conventional solid-state reaction route. By employing a facile solution-based synthetic strategy, we were able to obtain phase-pure orthorhombic CZGS in nanocrystalline form at a much lower reaction temperature. Prior to this work, the colloidal synthesis of single-phase orthorhombic CZGS on the nanoscale has never been reported. We find that the use of an appropriate combination of coordinating solvents and precursors is crucial to the sole formation of this metastable phase in solution. A possible formation mechanism is proposed on the basis of our experimental results. Because CZGS consists of environmentally benign metal components, it is regarded as a promising alternative material to the technologically useful yet toxic cadmium-containing semiconductors. The orthorhombic CZGS nanocrystals display strong photon absorption in the visible spectrum and are photocatalytically active in dye degradation under visible-light illumination.

  3. Pressure-induced amorphization in orthorhombic Ta{sub 2}O{sub 5}: An intrinsic character of crystal

    SciTech Connect

    Li, Quanjun; Zhang, Huafang; Cheng, Benyuan; Liu, Ran; Liu, Bo; Zou, Bo; Cui, Tian; Liu, Bingbing; Liu, Jing; Chen, Zhiqiang

    2014-05-21

    The phase transition of orthorhombic Ta{sub 2}O{sub 5} was investigated by in situ synchrotron X-ray diffraction and Raman spectroscopy. The orthorhombic phase transforms into an amorphous form completely at 24.7 GPa. A bulk modulus B{sub 0} = 139 (9) GPa for the orthorhombic Ta{sub 2}O{sub 5} is derived from the P-V data. We suggest that the pressure-induced amorphization (PIA) in Ta{sub 2}O{sub 5} can be attributed to the unstability of the a axis under high pressure leads to the connections of polyhedral breaking down and even triggers disorder of the whole crystal frame. These results demonstrate that the PIA is an intrinsic character of Ta{sub 2}O{sub 5} which depends on its orthorhombic crystal structure rather than nanosize effects. This study provides a new kind of bulk material for investigating PIA in metal oxides.

  4. Artificial chemical and magnetic structure at the domain walls of an epitaxial oxide.

    PubMed

    Farokhipoor, S; Magén, C; Venkatesan, S; Íñiguez, J; Daumont, C J M; Rubi, D; Snoeck, E; Mostovoy, M; de Graaf, C; Müller, A; Döblinger, M; Scheu, C; Noheda, B

    2014-11-20

    Progress in nanotechnology requires new approaches to materials synthesis that make it possible to control material functionality down to the smallest scales. An objective of materials research is to achieve enhanced control over the physical properties of materials such as ferromagnets, ferroelectrics and superconductors. In this context, complex oxides and inorganic perovskites are attractive because slight adjustments of their atomic structures can produce large physical responses and result in multiple functionalities. In addition, these materials often contain ferroelastic domains. The intrinsic symmetry breaking that takes place at the domain walls can induce properties absent from the domains themselves, such as magnetic or ferroelectric order and other functionalities, as well as coupling between them. Moreover, large domain wall densities create intense strain gradients, which can also affect the material's properties. Here we show that, owing to large local stresses, domain walls can promote the formation of unusual phases. In this sense, the domain walls can function as nanoscale chemical reactors. We synthesize a two-dimensional ferromagnetic phase at the domain walls of the orthorhombic perovskite terbium manganite (TbMnO3), which was grown in thin layers under epitaxial strain on strontium titanate (SrTiO3) substrates. This phase is yet to be created by standard chemical routes. The density of the two-dimensional sheets can be tuned by changing the film thickness or the substrate lattice parameter (that is, the epitaxial strain), and the distance between sheets can be made as small as 5 nanometres in ultrathin films, such that the new phase at domain walls represents up to 25 per cent of the film volume. The general concept of using domain walls of epitaxial oxides to promote the formation of unusual phases may be applicable to other materials systems, thus giving access to new classes of nanoscale materials for applications in nanoelectronics and

  5. Artificial chemical and magnetic structure at the domain walls of an epitaxial oxide

    NASA Astrophysics Data System (ADS)

    Farokhipoor, S.; Magén, C.; Venkatesan, S.; Íñiguez, J.; Daumont, C. J. M.; Rubi, D.; Snoeck, E.; Mostovoy, M.; de Graaf, C.; Müller, A.; Döblinger, M.; Scheu, C.; Noheda, B.

    2014-11-01

    Progress in nanotechnology requires new approaches to materials synthesis that make it possible to control material functionality down to the smallest scales. An objective of materials research is to achieve enhanced control over the physical properties of materials such as ferromagnets, ferroelectrics and superconductors. In this context, complex oxides and inorganic perovskites are attractive because slight adjustments of their atomic structures can produce large physical responses and result in multiple functionalities. In addition, these materials often contain ferroelastic domains. The intrinsic symmetry breaking that takes place at the domain walls can induce properties absent from the domains themselves, such as magnetic or ferroelectric order and other functionalities, as well as coupling between them. Moreover, large domain wall densities create intense strain gradients, which can also affect the material's properties. Here we show that, owing to large local stresses, domain walls can promote the formation of unusual phases. In this sense, the domain walls can function as nanoscale chemical reactors. We synthesize a two-dimensional ferromagnetic phase at the domain walls of the orthorhombic perovskite terbium manganite (TbMnO3), which was grown in thin layers under epitaxial strain on strontium titanate (SrTiO3) substrates. This phase is yet to be created by standard chemical routes. The density of the two-dimensional sheets can be tuned by changing the film thickness or the substrate lattice parameter (that is, the epitaxial strain), and the distance between sheets can be made as small as 5 nanometres in ultrathin films, such that the new phase at domain walls represents up to 25 per cent of the film volume. The general concept of using domain walls of epitaxial oxides to promote the formation of unusual phases may be applicable to other materials systems, thus giving access to new classes of nanoscale materials for applications in nanoelectronics and

  6. Complexity of High-Pressure Orthorhombic Iron Oxides, the Characterization of Fe5O6

    NASA Astrophysics Data System (ADS)

    Lavina, B.; Meng, Y.

    2014-12-01

    Occurring as accessory minerals in most rocks and forming large deposits of considerable economical importance, iron oxides have a major petrological importance. Their role as oxygen buffers, in differentiation processes and as magnetic phases summarize the critical importance of iron oxides in most petrological contexts, independently of their abundance.The discovery of a new compound in the Fe-O system, Fe4O5[1], reshaped our assumptions on the behavior of iron oxides in the Earth's deep interior, where phases of FeO and Fe3O4 were considered the sole plausible players. Further studies found that Fe4O5 is stable in a wide compositional range[2] and can accept a wide extent of isomorphic substitutions[3].We used laser heating synthesis in diamond anvil cell and microdiffraction mapping with high brilliance synchrotron x-ray[4] to explore the complexity of the Fe-O system at high pressure and temperature. We found coexistence of two to three oxides in most of the samples we investigated. By means of a careful exploration of diffraction effects in the reciprocal space, we singled-out the diffraction peaks of a few grains in multiphase diffraction patterns. These allowed a reliable characterization of yet a new iron oxide, Fe5O6. This compound, synthesized between 10 and 20 GPa, is also orthorhombic and can be described with the same building blocks of the other known orthorhombic iron oxides. A comparison of compressibility and lattice parameters of the latest iron oxides will be presented. [1] Lavina, B. et al. Discovery of the recoverable high-pressure iron oxide Fe4O5. Proc Natl Acad Sci U S A 108, 17281-5 (2011).[2] Woodland, A. B., Frost, D. J., Trots, D. M., Klimm, K. & Mezouar, M. In situ observation of the breakdown of magnetite (Fe3O4) to Fe4O5 and hematite at high pressures and temperatures. Am Mineral 97, 1808-1811 (2012).[3] Woodland, A. B. et al. Fe4O5 and its solid solutions in several simple systems. Cotrib Mineral Petrol 166, 1677-1686 (2013

  7. Double-exchange theory of ferroelectric polarization in orthorhombic manganites with twofold periodic magnetic texture

    NASA Astrophysics Data System (ADS)

    Solovyev, I. V.; Nikolaev, S. A.

    2013-04-01

    We argue that many aspects of improper ferroelectric (FE) activity in orthorhombic manganites can be rationalized by considering the limit of infinite intra-atomic splitting between majority- and minority-spin states (or the double-exchange limit), which reduces the problem to the analysis of a spinless double-exchange (DE) Hamiltonian. We apply this strategy to the low-energy model, derived from the first-principles electronic-structure calculations, and combine it with the Berry-phase theory of electric polarization. We start with the analysis of the simplest two-orbital model, describing the behavior of the eg bands, and apply it to the E-type antiferromagnetic (AFM) phase, which in the DE limit effectively breaks up into one-dimensional zigzag chains. We derive an analytical expression for the electronic polarization (Pel) and explain how it depends on the orbital ordering and the energy splitting Δ between eg states. Then, we evaluate parameters of this model for the series of manganites. For these purposes, we start from a more general five-orbital model for all Mn 3d bands and construct a new downfolded model for the eg bands. From the analysis of these parameters, we conclude that the behavior of Pel in realistic manganites always corresponds to the limit of large Δ. This property holds for all considered compounds even in the local-density approximation, which typically underestimates Δ. We further utilize this property in order to derive an analytical expression for Pel in a general twofold periodic magnetic texture, based on the five-orbital model and the perturbation-theory expansion for the Wannier functions in the first order of 1/Δ. This expression explains the functional dependence of Pel on the relative directions of spins. Furthermore, it suggests that Pel is related to the asymmetry of transfer integrals, which should have simultaneously symmetric and antisymmetric components in the crystal-field representation. The main contribution to this

  8. Epitaxial silicon devices for dosimetry applications

    SciTech Connect

    Bruzzi, M.; Bucciolini, M.; Casati, M.; Menichelli, D.; Talamonti, C.; Piemonte, C.; Svensson, B. G.

    2007-04-23

    A straightforward improvement of the efficiency and long term stability of silicon dosimeters has been obtained with a n{sup +}-p junction surrounded by a guard-ring structure implanted on an epitaxial p-type Si layer grown on a Czochralski substrate. The sensitivity of devices made on 50-{mu}m-thick epitaxial Si degrades by only 7% after an irradiation with 6 MeV electrons up to 1.5 kGy, and shows no significant further decay up to 10 kGy. These results prove the enhanced radiation tolerance and stability of epitaxial diodes as compared to present state-of-the-art Si devices.

  9. Epitaxial growth of single crystal films

    NASA Technical Reports Server (NTRS)

    Lind, M. D.; Kroes, R. L.; Immorlica, A. A., Jr.

    1981-01-01

    An experiment in gallium arsenide liquid phase epitaxy (LPE) on a flight of the SPAR 6 is described. A general purpose LPE processor suitable for either SPAR or Space Transportation System flights was designed and built. The process was started before the launch, and only the final step, in which the epitaxial film is grown, was performed during the flight. The experiment achieved its objectives; epitaxial films of reasonably good quality and very nearly the thickness predicted for convection free diffusion limited growth were produced. The films were examined by conventional analytical techniques and compared with films grown in normal gravity.

  10. High throughput vacuum chemical epitaxy

    NASA Astrophysics Data System (ADS)

    Fraas, L. M.; Malocsay, E.; Sundaram, V.; Baird, R. W.; Mao, B. Y.; Lee, G. Y.

    1990-10-01

    We have developed a vacuum chemical epitaxy (VCE) reactor which avoids the use of arsine and allows multiple wafers to be coated at one time. Our vacuum chemical epitaxy reactor closely resembles a molecular beam epitaxy system in that wafers are loaded into a stainless steel vacuum chamber through a load chamber. Also as in MBE, arsenic vapors are supplied as reactant by heating solid arsenic sources thereby avoiding the use of arsine. However, in our VCE reactor, a large number of wafers are coated at one time in a vacuum system by the substitution of Group III alkyl sources for the elemental metal sources traditionally used in MBE. Higher wafer throughput results because in VCE, the metal-alkyl sources for Ga, Al, and dopants can be mixed at room temperature and distributed uniformly though a large area injector to multiple substrates as a homogeneous array of mixed element molecular beams. The VCE reactor that we have built and that we shall describe here uniformly deposits films on 7 inch diameter substrate platters. Each platter contains seven two inch or three 3 inch diameter wafers. The load chamber contains up to nine platters. The vacuum chamber is equipped with two VCE growth zones and two arsenic ovens, one per growth zone. Finally, each oven has a 1 kg arsenic capacity. As of this writing, mirror smooth GaAs films have been grown at up to 4 μm/h growth rate on multiple wafers with good thickness uniformity. The background doping is p-type with a typical hole concentration and mobility of 1 × 10 16/cm 3 and 350 cm 2/V·s. This background doping level is low enough for the fabrication of MESFETs, solar cells, and photocathodes as well as other types of devices. We have fabricated MESFET devices using VCE-grown epi wafers with peak extrinsic transconductance as high as 210 mS/mm for a threshold voltage of - 3 V and a 0.6 μm gate length. We have also recently grown AlGaAs epi layers with up to 80% aluminum using TEAl as the aluminum alkyl source. The Al

  11. High-Pressure Orthorhombic Ferromagnesite as a Potential Deep-Mantle Carbon Carrier

    PubMed Central

    Liu, Jin; Lin, Jung-Fu; Prakapenka, Vitali B.

    2015-01-01

    Knowledge of the physical and chemical properties of candidate deep-carbon carriers such as ferromagnesite [(Mg,Fe)CO3] at high pressure and temperature of the deep mantle is necessary for our understanding of deep-carbon storage as well as the global carbon cycle of the planet. Previous studies have reported very different scenarios for the (Mg,Fe)CO3 system at deep-mantle conditions including the chemical dissociation to (Mg,Fe)O+CO2, the occurrence of the tetrahedrally-coordinated carbonates based on CO4 structural units, and various high-pressure phase transitions. Here we have studied the phase stability and compressional behavior of (Mg,Fe)CO3 carbonates up to relevant lower-mantle conditions of approximately 120 GPa and 2400 K. Our experimental results show that the rhombohedral siderite (Phase I) transforms to an orthorhombic phase (Phase II with Pmm2 space group) at approximately 50 GPa and 1400 K. The structural transition is likely driven by the spin transition of iron accompanied by a volume collapse in the Fe-rich (Mg,Fe)CO3 phases; the spin transition stabilizes the high-pressure phase II at much lower pressure conditions than its Mg-rich counterpart. It is conceivable that the low-spin ferromagnesite phase II becomes a major deep-carbon carrier at the deeper parts of the lower mantle below 1900 km in depth. PMID:25560542

  12. Silver-decorated orthorhombic nanotubes of lithium vanadium oxide: an impeder of bacterial growth and biofilm.

    PubMed

    Diggikar, Rahul S; Patil, Rajendra H; Kale, Sheetal B; Thombre, Dipalee K; Gade, Wasudeo N; Kulkarni, Milind V; Kale, Bharat B

    2013-09-01

    Reoccurrence of infectious diseases and ability of pathogens to resist antibacterial action has raised enormous challenges which may possibly be confronted by nanotechnology routes. In the present study, uniformly embedded silver nanoparticles in orthorhombic nanotubes of lithium vanadium oxide (LiV2O5/Ag) were explored as an impeder of bacterial growth and biofilm. The LiV2O5/Ag nanocomposites have impeded growth of Gram-positive Bacillus subtilis NCIM 2063 and Gram-negative Escherichia coli NCIM 2931 at 60 to 120 μg/mL. It also impeded the biofilm in Pseudomonas aeruginosa NCIM 2948 at 12.5 to 25 μg/mL. Impedance in the growth and biofilm occurs primarily by direct action of the nanocomposites on the cell surfaces of test organisms as revealed by surface perturbation in scanning electron microscopy. As the metabolic growth and biofilm formation phenomena of pathogens play a central role in progression of pathogenesis, LiV2O5/Ag nanocomposite-based approach is likely to curb the menace of reoccurrence of infectious diseases. Thus, LiV2O5/Ag nanocomposites can be viewed as a promising candidate in biofabrication of biomedical materials.

  13. Search for half-metallic ferromagnetism in orthorhombic Ce(Fe/Cr)O3 perovskites

    NASA Astrophysics Data System (ADS)

    Abbad, A.; Benstaali, W.; Bentounes, H. A.; Bentata, S.; Benmalem, Y.

    2016-02-01

    The full-potential linearized augmented plane wave (FPLAPW) method based on the density functional theory within the GGA and GGA+U, is used to investigate the structural, magnetic and half-metallic properties of the Pnma orthorhombic Cerium orthoferrite (CeFeO3) and Cerium orthochromite (CeCrO3). The calculated densities of states presented in this study identify the metallic behavior CeFeO3 when we use the GGA scheme, whereas when we use the GGA+U, we see that its exhibits half-metallic character with an integer magnetic moment of 24 μB per formula unit at its equilibrium volume. CeCrO3 is half-metallic for both approaches and of n type conductivity for GGA but p type conductivity for GGA+U. It is found that the majority of the magnetic moments of both compounds originate from the cerium sites since the f states of Ce are spin polarized. From the band structure and the densities of states analysis, we find that CeCrO3 and CeFeO3 are strong candidates for spintronic applications.

  14. High-pressure orthorhombic ferromagnesite as a potential deep-mantle carbon carrier.

    PubMed

    Liu, Jin; Lin, Jung-Fu; Prakapenka, Vitali B

    2015-01-01

    Knowledge of the physical and chemical properties of candidate deep-carbon carriers such as ferromagnesite [(Mg,Fe)CO₃] at high pressure and temperature of the deep mantle is necessary for our understanding of deep-carbon storage as well as the global carbon cycle of the planet. Previous studies have reported very different scenarios for the (Mg,Fe)CO₃ system at deep-mantle conditions including the chemical dissociation to (Mg,Fe)O+CO₂, the occurrence of the tetrahedrally-coordinated carbonates based on CO₄ structural units, and various high-pressure phase transitions. Here we have studied the phase stability and compressional behavior of (Mg,Fe)CO₃ carbonates up to relevant lower-mantle conditions of approximately 120 GPa and 2400 K. Our experimental results show that the rhombohedral siderite (Phase I) transforms to an orthorhombic phase (Phase II with Pmm2 space group) at approximately 50 GPa and 1400 K. The structural transition is likely driven by the spin transition of iron accompanied by a volume collapse in the Fe-rich (Mg,Fe)CO₃ phases; the spin transition stabilizes the high-pressure phase II at much lower pressure conditions than its Mg-rich counterpart. It is conceivable that the low-spin ferromagnesite phase II becomes a major deep-carbon carrier at the deeper parts of the lower mantle below 1900 km in depth. PMID:25560542

  15. High-pressure orthorhombic ferromagnesite as a potential deep-mantle carbon carrier

    DOE PAGES

    Liu, Jin; Lin, Jung -Fu; Prakapenka, Vitali B.

    2015-01-06

    In this study, knowledge of the physical and chemical properties of candidate deep-carbon carriers such as ferromagnesite [(Mg,Fe)CO3] at high pressure and temperature of the deep mantle is necessary for our understanding of deep-carbon storage as well as the global carbon cycle of the planet. Previous studies have reported very different scenarios for the (Mg,Fe)CO3 system at deep-mantle conditions including the chemical dissociation to (Mg,Fe)O+CO2, the occurrence of the tetrahedrally-coordinated carbonates based on CO4 structural units, and various high-pressure phase transitions. Here we have studied the phase stability and compressional behavior of (Mg,Fe)CO3 carbonates up to relevant lower-mantle conditions ofmore » approximately 120 GPa and 2400 K. Our experimental results show that the rhombohedral siderite (Phase I) transforms to an orthorhombic phase (Phase II with Pmm2 space group) at approximately 50 GPa and 1400 K. The structural transition is likely driven by the spin transition of iron accompanied by a volume collapse in the Fe-rich (Mg,Fe)CO3 phases; the spin transition stabilizes the high-pressure phase II at much lower pressure conditions than its Mg-rich counterpart. It is conceivable that the low-spin ferromagnesite phase II becomes a major deep-carbon carrier at the deeper parts of the lower mantle below 1900 km in depth.« less

  16. The compressibility of cubic white, orthorhombic black and rhombohedral black phosphorus

    SciTech Connect

    Clark, S; Zaug, J M

    2009-06-05

    The effect of pressure on the crystal structure of white phosphorus has been studied up to 22.4 GPa. The {alpha} phase was found to transform into the {alpha}' phase at 0.87 {+-} 0.04 GPa with a volume change of 0.1 {+-} 0.3 cc/mol. A fit of a second order Birch-Murghanan equation to the data gave Vo = 16.94 {+-} 0.08 cc/mol and K{sub o} = 6.7 {+-} 0.5 GPa for the {alpha} phase and Vo = 16.4 {+-} 0.1 cc/mol and K{sub o} = 9.1 {+-} 0.3 GPa for the {alpha}' phase. The {alpha}' phase was found to transform to the A17 phase of black phosphorus at 2.68 {+-} 0.34 GPa and then with increasing pressure to the A7 and then simple cubic phase of black phosphorus. A fit of a second order Birch-Murnaghan equation to our orthorhombic and rhombohedral black phosphorus data gave Vo = 11.43 {+-} 0.02 cc/mol and K{sub o} = 34.7 {+-} 0.5 GPa for the A17 phase and Vo = 9.62 {+-} 0.01 cc/mol and K{sub o} = 65.0 {+-} 0.6 GPa for the A7 phase.

  17. Thermal evolution of the crystal structure of the orthorhombic perovskite LaFeO{sub 3}

    SciTech Connect

    Dixon, Charlotte A.L.; Kavanagh, Christopher M.; Knight, Kevin S.; Kockelmann, Winfried; Morrison, Finlay D.; Lightfoot, Philip

    2015-10-15

    The thermal evolution of the crystal structure of the prototypical orthorhombic perovskite LaFeO{sub 3} has been studied in detail by powder neutron diffraction in the temperature range 25

  18. Volatile and nonvolatile magnetic easy-axis rotation in epitaxial ferromagnetic thin films on ferroelectric single crystal substrates

    NASA Astrophysics Data System (ADS)

    Wang, Z.; Wang, Y.; Ge, W.; Li, J.; Viehland, D.

    2013-09-01

    We explored the relationship between phase transformation and magnetoelectric effect by depositing epitaxial CoFe2O4 films on ⟨110⟩ oriented Pb(Mg,Nb)O3-PbTiO3 (PMN-PT) with three different PbTiO3 contents (PMN-28PT, PMN-29.5PT, and PMN-30PT). Electric-field controlled rhombohedral to orthorhombic phase transformation was confirmed by both piezoelectric and dielectric constant measurements. A giant in-plane (IP) uniaxial strain in CoFe2O4 film was induced due to dramatic lattice parameter change trigged by phase transition. Magnetic easy axis can be rotated from IP⟨110⟩ to IP⟨001⟩. More importantly, the phase transformation could be either reversible or irreversible, resulting in either volatile or nonvolatile magnetic easy axis rotations.

  19. Epitaxial growth of silicon for layer transfer

    DOEpatents

    Teplin, Charles; Branz, Howard M

    2015-03-24

    Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.

  20. Epitaxial growth of single crystal films

    NASA Technical Reports Server (NTRS)

    Lind, M. D.

    1980-01-01

    An experiment in gallium arsenide liquid phase epitaxy was performed successfully on the SPAR 6 flight October 17, 1979. The design, fabrication, and testing of the experimental apparatus, and the performance and results of the experiment are discussed.

  1. Silicon Holder For Molecular-Beam Epitaxy

    NASA Technical Reports Server (NTRS)

    Hoenk, Michael E.; Grunthaner, Paula J.; Grunthaner, Frank J.

    1993-01-01

    Simple assembly of silicon wafers holds silicon-based charge-coupled device (CCD) during postprocessing in which silicon deposited by molecular-beam epitaxy. Attains temperatures similar to CCD, so hotspots suppressed. Coefficients of thermal expansion of holder and CCD equal, so thermal stresses caused by differential thermal expansion and contraction do not develop. Holder readily fabricated, by standard silicon processing techniques, to accommodate various CCD geometries. Silicon does not contaminate CCD or molecular-beam-epitaxy vacuum chamber.

  2. Epitaxial Deposition Of Germanium Doped With Gallium

    NASA Technical Reports Server (NTRS)

    Huffman, James E.

    1994-01-01

    Epitaxial layers of germanium doped with gallium made by chemical vapor deposition. Method involves combination of techniques and materials used in chemical vapor deposition with GeH4 or GeCl4 as source of germanium and GaCl3 as source of gallium. Resulting epitaxial layers of germanium doped with gallium expected to be highly pure, with high crystalline quality. High-quality material useful in infrared sensors.

  3. Epitaxial thin film growth in outer space

    NASA Technical Reports Server (NTRS)

    Ignatiev, Alex; Chu, C. W.

    1988-01-01

    A new concept for materials processing in space exploits the ultravacuum component of space for thin-film epitaxial growth. The unique LEO space environment is expected to yield 10-ftorr or better pressures, semiinfinite pumping speeds, and large ultravacuum volume (about 100 cu m) without walls. These space ultravacuum properties promise major improvement in the quality, unique nature, and throughput of epitaxially grown materials, including semiconductors, magnetic materials, and thin-film high-temperature superconductors.

  4. Nanoscale monoclinic domains in epitaxial SrRuO3 thin films deposited by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Ghica, C.; Negrea, R. F.; Nistor, L. C.; Chirila, C. F.; Pintilie, L.

    2014-07-01

    In this paper, we analyze the structural distortions observed by transmission electron microscopy in thin epitaxial SrRuO3 layers used as bottom electrodes in multiferroic coatings onto SrTiO3 substrates for future multiferroic devices. Regardless of the nature and architecture of the multilayer oxides deposited on the top of the SrRuO3 thin films, selected area electron diffraction patterns systematically revealed the presence of faint diffraction spots appearing in forbidden positions for the SrRuO3 orthorhombic structure. High-resolution transmission electron microscopy (HRTEM) combined with Geometric Phase Analysis (GPA) evidenced the origin of these forbidden diffraction spots in the presence of structurally disordered nanometric domains in the SrRuO3 bottom layers, resulting from a strain-driven phase transformation. The local high compressive strain (-4% ÷ -5%) measured by GPA in the HRTEM images induces a local orthorhombic to monoclinic phase transition by a cooperative rotation of the RuO6 octahedra. A further confirmation of the origin of the forbidden diffraction spots comes from the simulated diffraction patterns obtained from a monoclinic disordered SrRuO3 structure.

  5. Nanoscale monoclinic domains in epitaxial SrRuO{sub 3} thin films deposited by pulsed laser deposition

    SciTech Connect

    Ghica, C. Negrea, R. F.; Nistor, L. C.; Chirila, C. F.; Pintilie, L.

    2014-07-14

    In this paper, we analyze the structural distortions observed by transmission electron microscopy in thin epitaxial SrRuO{sub 3} layers used as bottom electrodes in multiferroic coatings onto SrTiO{sub 3} substrates for future multiferroic devices. Regardless of the nature and architecture of the multilayer oxides deposited on the top of the SrRuO{sub 3} thin films, selected area electron diffraction patterns systematically revealed the presence of faint diffraction spots appearing in forbidden positions for the SrRuO{sub 3} orthorhombic structure. High-resolution transmission electron microscopy (HRTEM) combined with Geometric Phase Analysis (GPA) evidenced the origin of these forbidden diffraction spots in the presence of structurally disordered nanometric domains in the SrRuO{sub 3} bottom layers, resulting from a strain-driven phase transformation. The local high compressive strain (−4% ÷ −5%) measured by GPA in the HRTEM images induces a local orthorhombic to monoclinic phase transition by a cooperative rotation of the RuO{sub 6} octahedra. A further confirmation of the origin of the forbidden diffraction spots comes from the simulated diffraction patterns obtained from a monoclinic disordered SrRuO{sub 3} structure.

  6. Effect of uniaxial strain on the structural, electronic and elastic properties of orthorhombic BiMnO3

    NASA Astrophysics Data System (ADS)

    Yang, Pei; Haibin, Wu

    2015-03-01

    We study the elastic constants and electronic properties of orthorhombic BiMnO3 under uniaxial strain along the c-axis using the first-principles method. It is found that, beyond the range -0.025 < ɛ < 0.055, the predicted stiffness constants cij cannot demand the Born stability criteria and the compliance constant s44 shows abrupt changes, which accompany phase transition. In addition, the results for magnetism moments and polycrystalline properties are also reported. Additionally, under compressive strain, a band gap transition from the indirect to the direct occurs within -0.019 < ɛ < -0.018. Furthermore, the response of the band gap of orthorhombic BiMnO3 to uniaxial strain is studied.

  7. Negative phase velocity and negative refraction in orthorhombic dielectric-magnetic lossy media with polarization along one of principal axes

    NASA Astrophysics Data System (ADS)

    Potisook, Chanin; Natenapit, Mayuree

    2014-05-01

    The characteristics of the TE plane wave propagations in orthorhombic dielectric-magnetic lossy media are investigated. The special case for the electric field being parallel to one principal axis and the wave vector lying wholly in the plane formed by the other two principal axes is considered. The dissipation is taken into account by letting the elements of the permittivity and the permeability tensors to be complex. The general condition on the negative phase velocity for uniform TE plane waves is provided in terms of material parameters and the propagation angle. The numerical calculations for the angles between the average Poynting vector and the phase velocity are performed in order to justify the theoretical analysis. In addition, the TE refraction between the free space and the orthorhombic dielectric-magnetic lossy media are also considered and the general condition on the negative refraction is derived.

  8. Ultrafast structural dynamics of the orthorhombic distortion in the Fe-pnictide parent compound BaFe2As2

    PubMed Central

    Rettig, L.; Mariager, S. O.; Ferrer, A.; Grübel, S.; Johnson, J. A.; Rittmann, J.; Wolf, T.; Johnson, S. L.; Ingold, G.; Beaud, P.; Staub, U.

    2016-01-01

    Using femtosecond time-resolved hard x-ray diffraction, we investigate the structural dynamics of the orthorhombic distortion in the Fe-pnictide parent compound BaFe2As2. The orthorhombic distortion analyzed by the transient splitting of the (1 0 3) Bragg reflection is suppressed on an initial timescale of 35 ps, which is much slower than the suppression of magnetic and nematic order. This observation demonstrates a transient state with persistent structural distortion and suppressed magnetic/nematic order which are strongly linked in thermal equilibrium. We suggest a way of quantifying the coupling between structural and nematic degrees of freedom based on the dynamics of the respective order parameters. PMID:27158636

  9. Influence of downsizing of zeolite crystals on the orthorhombic ↔ monoclinic phase transition in pure silica MFI-type

    NASA Astrophysics Data System (ADS)

    Kabalan, Ihab; Michelin, Laure; Rigolet, Séverinne; Marichal, Claire; Daou, T. Jean; Lebeau, Bénédicte; Paillaud, Jean-Louis

    2016-08-01

    The impact of crystal size on the transition orthorhombic ↔ monoclinic phase in MFI-type purely silica zeolites is investigated between 293 and 473 K using 29Si MAS NMR and powder X-ray diffraction. Three silicalite-1 zeolites are synthesized: a material constituted of micron-sized crystals, pseudospherical nanometer-sized crystals and hierarchical porous zeolites with a mesoporous network created by the use of a gemini-type diquaternary ammonium surfactant giving nanosheet zeolites. Our results show for the first time that the orthorhombic ↔ monoclinic phase transition already known for micron-sized particles also occurs in nanometer-sized zeolite crystals whereas our data suggest that the extreme downsizing of the zeolite crystal to one unit cell in thickness leads to an extinction of the phase transition.

  10. One-step hydrothermal synthesis, characterization and magnetic properties of orthorhombic PrCrO{sub 3} cubic particles

    SciTech Connect

    Zhang, Youjin Yao, Chengpeng; Fan, Yun; Zhou, Maozhong

    2014-11-15

    Highlights: • Orthorhombic PrCrO{sub 3} cubic particles were prepared by a simple and facile one-step hydrothermal method. • The possible formation mechanism of PrCrO{sub 3} cubic particles was proposed. • The as-synthesized PrCrO{sub 3} exhibited behaviors of magnetic transition and negative magnetization. - Abstract: Orthorhombic PrCrO{sub 3} cubic particles were synthesized by a simple and facile one-step hydrothermal method of processing temperature 280 °C for 7 days. The products prepared in this paper have been characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR) and field-emission scanning electron microscopy (FESEM). The magnetic properties of the final sample are also studied. The XRD pattern shows the pure orthorhombic phase for PrCrO{sub 3} particles, the XPS and FTIR results further demonstrate the purity and composition of the product. FESEM images show cubic morphology for the PrCrO{sub 3} particles. The possible growth mechanism for PrCrO{sub 3} cubic particles is proposed. Through the investigation of magnetic properties, it can be seen that the orthorhombic PrCrO{sub 3} cubic particles exhibit behaviors of magnetic transition and negative magnetization. The Néel temperature is about 232 K and the magnetic hysteresis loop under 4 K shows that the coercivity (H{sub C}) and remanence (M{sub r}) is about 1728 Oe and 4.88 emu/g, respectively.

  11. Structural and ferromagnetic properties of an orthorhombic phase of MnBi stabilized with Rh additions

    DOE PAGES

    Taufour, Valentin; Thimmaiah, Srinivasa; March, Stephen; Saunders, Scott; Sun, Kewei; Lamichhane, Tej Nath; Kramer, Matthew J.; Bud’ko, Sergey L.; Canfield, Paul C.

    2015-07-28

    The article addresses the possibility of alloy elements in MnBi which may modify the thermodynamic stability of the NiAs-type structure without significantly degrading the magnetic properties. The addition of small amounts of Rh and Mn provides an improvement in the thermal stability with some degradation of the magnetic properties. The small amounts of Rh and Mn additions in MnBi stabilize an orthorhombic phase whose structural and magnetic properties are closely related to the ones of the previously reported high-temperature phase of MnBi (HT MnBi). The properties of the HT MnBi, which is stable between 613 and 719 K, have notmore » been studied in detail because of its transformation to the stable low-temperature MnBi (LT MnBi), making measurements near and below its Curie temperature difficult. The Rh-stabilized MnBi with chemical formula Mn1.0625–xRhxBi [x=0.02(1)] adopts a new superstructure of the NiAs/Ni2In structure family. It is ferromagnetic below a Curie temperature of 416 K. The critical exponents of the ferromagnetic transition are not of the mean-field type but are closer to those associated with the Ising model in three dimensions. The magnetic anisotropy is uniaxial; the anisotropy energy is rather large, and it does not increase when raising the temperature, contrary to what happens in LT MnBi. The saturation magnetization is approximately 3μB/f.u. at low temperatures. Thus, while this exact composition may not be application ready, it does show that alloying is a viable route to modifying the stability of this class of rare-earth-free magnet alloys.« less

  12. High-pressure orthorhombic ferromagnesite as a potential deep-mantle carbon carrier

    SciTech Connect

    Liu, Jin; Lin, Jung -Fu; Prakapenka, Vitali B.

    2015-01-06

    In this study, knowledge of the physical and chemical properties of candidate deep-carbon carriers such as ferromagnesite [(Mg,Fe)CO3] at high pressure and temperature of the deep mantle is necessary for our understanding of deep-carbon storage as well as the global carbon cycle of the planet. Previous studies have reported very different scenarios for the (Mg,Fe)CO3 system at deep-mantle conditions including the chemical dissociation to (Mg,Fe)O+CO2, the occurrence of the tetrahedrally-coordinated carbonates based on CO4 structural units, and various high-pressure phase transitions. Here we have studied the phase stability and compressional behavior of (Mg,Fe)CO3 carbonates up to relevant lower-mantle conditions of approximately 120 GPa and 2400 K. Our experimental results show that the rhombohedral siderite (Phase I) transforms to an orthorhombic phase (Phase II with Pmm2 space group) at approximately 50 GPa and 1400 K. The structural transition is likely driven by the spin transition of iron accompanied by a volume collapse in the Fe-rich (Mg,Fe)CO3 phases; the spin transition stabilizes the high-pressure phase II at much lower pressure conditions than its Mg-rich counterpart. It is conceivable that the low-spin ferromagnesite phase II becomes a major deep-carbon carrier at the deeper parts of the lower mantle below 1900 km in depth.

  13. Structural and ferromagnetic properties of an orthorhombic phase of MnBi stabilized with Rh additions

    SciTech Connect

    Taufour, Valentin; Thimmaiah, Srinivasa; March, Stephen; Saunders, Scott; Sun, Kewei; Lamichhane, Tej Nath; Kramer, Matthew J.; Bud’ko, Sergey L.; Canfield, Paul C.

    2015-07-28

    The article addresses the possibility of alloy elements in MnBi which may modify the thermodynamic stability of the NiAs-type structure without significantly degrading the magnetic properties. The addition of small amounts of Rh and Mn provides an improvement in the thermal stability with some degradation of the magnetic properties. The small amounts of Rh and Mn additions in MnBi stabilize an orthorhombic phase whose structural and magnetic properties are closely related to the ones of the previously reported high-temperature phase of MnBi (HT MnBi). The properties of the HT MnBi, which is stable between 613 and 719 K, have not been studied in detail because of its transformation to the stable low-temperature MnBi (LT MnBi), making measurements near and below its Curie temperature difficult. The Rh-stabilized MnBi with chemical formula Mn1.0625–xRhxBi [x=0.02(1)] adopts a new superstructure of the NiAs/Ni2In structure family. It is ferromagnetic below a Curie temperature of 416 K. The critical exponents of the ferromagnetic transition are not of the mean-field type but are closer to those associated with the Ising model in three dimensions. The magnetic anisotropy is uniaxial; the anisotropy energy is rather large, and it does not increase when raising the temperature, contrary to what happens in LT MnBi. The saturation magnetization is approximately 3μB/f.u. at low temperatures. Thus, while this exact composition may not be application ready, it does show that alloying is a viable route to modifying the stability of this class of rare-earth-free magnet alloys.

  14. Dynamic and structural properties of orthorhombic rare-earth manganites under high pressure

    NASA Astrophysics Data System (ADS)

    Mota, D. A.; Almeida, A.; Rodrigues, V. H.; Costa, M. M. R.; Tavares, P.; Bouvier, P.; Guennou, M.; Kreisel, J.; Moreira, J. Agostinho

    2014-08-01

    We report a high-pressure study of orthorhombic rare-earth manganites AMnO3 using Raman scattering (for A=Pr, Nd, Sm, Eu, Tb, and Dy) and synchrotron x-ray diffraction (XRD), for A = Pr, Sm, Eu, and Dy. In all cases, a phase transition was evidenced by the disappearance of the Raman signal at a critical pressure that depends on the A cation. For the compounds with A=Pr, Sm, and Dy, XRD confirms the presence of a corresponding structural transition to a noncubic phase, so that the disappearance of the Raman spectrum can be interpreted as an insulator-to-metal transition. We analyze the compression mechanisms at work in the different manganites via the pressure dependence of the lattice parameters, the shear strain in the ac plane, and the Raman bands associated with out-of-phase MnO6 rotations and in-plane O2 symmetric stretching modes. Our data show a crossover across the rare-earth series between two different kinds of behavior. For the smaller A cations considered in this study (Dy and Tb), the compression is nearly isotropic in the ac plane, with only small evolutions of the tilt angles and cooperative Jahn-Teller distortion. As the radius of the A cation increases, the pressure-induced reduction of Jahn-Teller distortion becomes more pronounced and increasingly significant as a compression mechanism, while the pressure-induced tilting of octahedra chains becomes conversely less pronounced. We finally discuss our results in light of the notion of chemical pressure and show that the analogy with hydrostatic pressure works quite well for manganites with the smaller A cations considered in this paper but can be misleading with large A cations.

  15. Orthorhombic 11C pyrrhotite from Michałkowa, Góry Sowie Block, The Sudetes, Poland - preliminary report

    NASA Astrophysics Data System (ADS)

    Rybicki, Maciej; Krzykawski, Tomasz

    2014-09-01

    This study provides the preliminary report about first occurrence of orthorhombic 11C pyrrhotite (Fe(1-x)S) from the Sudetes, Poland. Samples of pyrrhotite-containing two-pyroxene gabbro were found in a classic pegmatite locality in Michałkowa near Walim in the Góry Sowie Block. Based on microscopic methods, pyrrhotite is associated with pentlandite, chalcopyrite, chromite, ilmenite, gersdorffite, magnetite, biotite, magnesiohornblende, clinochlore, lizardite and talc. X-Ray diffraction (XRD) indicate that pyrrhotite has orthorhombic 11C structure and it is characterized by: a = 3.433(9) Å, b = 5.99(2) Å, c = 5.7432(5) Å, β = 90º and d102 = 2.06906 Å. Mössbauer studies confirmed the XRD data. Pyrrhotite has three sextets with hyperfine parameter values 30.8 T for sextet A, 27.9 T and 25.8 T for sextets B and C respectively, indicating orthorhombic structure, the composition near Fe10S11 and x = 0.0909

  16. Orthorhombic 11C Pyrrhotite from Michałkowa, Góry Sowie Block, The Sudetes, Poland - Preliminary Report

    NASA Astrophysics Data System (ADS)

    Rybicki, Maciej; Krzykawski, Tomasz

    2014-09-01

    This study provides the preliminary report about first occurrence of orthorhombic 11C pyrrhotite (Fe(i-x)S) from the Sudetes, Poland. Samples of pyrrhotite-containing two-pyroxene gabbro were found in a classic pegmatite locality in Michałkowa near Walim in the Góry Sowie Block. Based on microscopic methods, pyrrhotite is associated with pentlandite, chalcopyrite, chromite, ilmenite, gersdorffite, magnetite, biotite, magnesiohornblende, clinochlore, lizardite and talc. X-Ray diffraction (XRD) indicate that pyrrhotite has orthorhombic 11C structure and it is characterized by: a = 3.433(9) Å, b = 5.99(2) Å, c = 5.7432(5) Å, ß = 90° and d 102 = 2.06906 Å. Mössbauer studies confirmed the XRD data. Pyrrhotite has three sextets with hyperfine parameter values 30.8 T for sextet A, 27.9 T and 25.8 T for sextets B and C respectively, indicating orthorhombic structure, the composition near Fe10S11 and x = 0.0909.

  17. Facile Route to the Controlled Synthesis of Tetragonal and Orthorhombic SnO2 Films by Mist Chemical Vapor Deposition.

    PubMed

    Bae, Jae-Yoon; Park, Jozeph; Kim, Hyun You; Kim, Hyun-Suk; Park, Jin-Seong

    2015-06-10

    Two types of tin dioxide (SnO2) films were grown by mist chemical vapor deposition (Mist-CVD), and their electrical properties were studied. A tetragonal phase is obtained when methanol is used as the solvent, while an orthorhombic structure is formed with acetone. The two phases of SnO2 exhibit different electrical properties. Tetragonal SnO2 behaves as a semiconductor, and thin-film transistors (TFTs) incorporating this material as the active layer exhibit n-type characteristics with typical field-effect mobility (μ(FE)) values of approximately 3-4 cm(2)/(V s). On the other hand, orthorhombic SnO2 is found to behave as a metal-like transparent conductive oxide. Density functional theory calculations reveal that orthorhombic SnO2 is more stable under oxygen-rich conditions, which correlates well with the experimentally observed solvent effects. The present study paves the way for the controlled synthesis of functional materials by atmospheric pressure growth techniques. PMID:25984757

  18. Bounds and self-consistent estimates for elastic constants of granular polycrystals composed of orthorhombics or crystal with higher symmetries

    SciTech Connect

    Berryman, J. G.

    2011-02-01

    Methods for computing Hashin-Shtrikman bounds and related self-consistent estimates of elastic constants for polycrystals composed of crystals having orthorhombic symmetry have been known for about three decades. However, these methods are underutilized, perhaps because of some perceived difficulties with implementing the necessary computational procedures. Several simplifications of these techniques are introduced, thereby reducing the overall computational burden, as well as the complications inherent in mapping out the Hashin-Shtrikman bounding curves. The self-consistent estimates of the effective elastic constants are very robust, involving a quickly converging iteration procedure. Once these self-consistent values are known, they may then be used to speed up the computations of the Hashin-Shtrikman bounds themselves. It is shown furthermore that the resulting orthorhombic polycrystal code can be used as well to compute both bounds and self-consistent estimates for polycrystals of higher-symmetry tetragonal, hexagonal, and cubic (but not trigonal) materials. The self-consistent results found this way are shown to be the same as those obtained using the earlier methods, specifically those methods designed specially for each individual symmetry type. But the Hashin-Shtrikman bounds found using the orthorhombic code are either the same or (more typically) tighter than those found previously for these special cases (i.e., tetragonal, hexagonal, and cubic). The improvement in the Hashin-Shtrikman bounds is presumably due to the additional degrees of freedom introduced into the available search space.

  19. Photo-enhanced salt-water splitting using orthorhombic Ag8SnS6 photoelectrodes in photoelectrochemical cells

    NASA Astrophysics Data System (ADS)

    Cheng, Kong-Wei; Tsai, Wei-Tseng; Wu, Yu-Hsuan

    2016-06-01

    Orthorhombic Ag8SnS6 photoelectrodes are prepared on various substrates via reactive sulfurization using the radio-frequency magnetron sputtering of silver-tin metal precursors. Evaluations of the photoelectrochemical performances of Ag8SnS6 photoelectrodes with various levels of silver content are carried out in various aqueous solutions. X-ray diffraction patterns and Hall measurements of samples after a three-stage sulfurization process show that all samples are the pure orthorhombic Ag8SnS6 phase with n-type conductivity. The energy band gaps, carrier concentrations, and mobilities of samples on glass substrates are 1.31-1.33 eV, 7.07 × 1011-8.52 × 1012 cm-3, and 74.9-368 cm2 V-1 s-1, respectively, depending on the [Ag]/[Ag+Sn] molar ratio in samples. The highest photoelectrochemical performances of orthorhombic Ag8SnS6 photoelectrodes in aqueous 0.35 M Na2S + 0.25 M K2SO3 and 0.5 M NaCl solutions are respectively 2.09 and 2.5 mA cm-2 at an applied voltages of 0.9 and 1.23 V vs. a reversible hydrogen electrode under light irradiation with a light intensity of 100 mW cm-2 from a 300-W Xe lamp.

  20. Determination of crystallographic orientation of lead-free piezoelectric (K,Na)NbO{sub 3} epitaxial thin films grown on SrTiO{sub 3} (100) surfaces

    SciTech Connect

    Yu, Qi; Zhu, Fang-Yuan; Cheng, Li-Qian; Wang, Ke; Li, Jing-Feng

    2014-03-10

    Crystallographic structure of sol-gel-processed lead-free (K,Na)NbO{sub 3} (KNN) epitaxial films on [100]-cut SrTiO{sub 3} single-crystalline substrates was investigated for a deeper understanding of its piezoelectric response. Lattice parameter measurement by high-resolution X-ray diffraction and transmission electron microscopy revealed that the orthorhombic KNN films on SrTiO{sub 3} (100) surfaces are [010] oriented (b-axis-oriented) rather than commonly identified c-axis orientation. Based on the crystallographic orientation and corresponding ferroelectric domain structure investigated by piezoresponse force microscopy, the superior piezoelectric property along b-axis of epitaxial KNN films than other orientations can be explained.

  1. Growth, Crystal Structure, and Properties of Epitaxial BiScO3 Thin Films By Pulsed Laser Deposition

    SciTech Connect

    Trolier-McKinstry, Susan; Biegalski, Michael D; Wang, Junling; Belik, Alexei; Levin, Igor

    2008-01-01

    Epitaxial BiScO3 thin films were grown on BiFeO3 buffered SrTiO3 substrates. The crystallinity of the films is reasonable, given the very large lattice mismatch, with full width at half maximum of 0.58 in  peak), 0.80 in  (222 peak) and 0.28 in . It was found that the epitaxial thin films of BiScO3 on SrTiO3 retain the principal structural features of bulk BiScO3 (i.e. octahedral tilting and the pattern of Bi displacements) that give rise to a pseudo-orthorhombic unit cell 22ac 2ac 4ac (ac≈4 refers to the lattice parameter of an ideal cubic perovskite). Films grown on (100) substrates adopt the bulk monoclinic structure whereas films on the (110) substrates exhibit a somewhat different symmetry. The dielectric permittivities were modest (~35) with low loss tangents; no maxima were observed over the temperature range of -200 and +350 C. There is no evidence of significant hysteresis (either ferroelectric or antiferroelectric) at room temperature up to the breakdown strength of the films.

  2. Growth and Structural Study of Epitaxial NaMnF3 Thin Films on SrTiO3

    NASA Astrophysics Data System (ADS)

    Kc, Amit; Johnson, Trent; Borisov, Pavel; Lederman, David

    2015-03-01

    Perovskite fluorides (ABF3) exhibit many interesting phenomena, e.g. dipolar and magnetic long-range order superconductivity, as well as magnetoelectric coupling. Recently, G. C. Garcia-Castro et al. predicted that orthorhombically distorted Pnma NaMnF3 perovskite should have a particularly soft ferroelectric mode, and is expected to demonstrate ferroelectric order regardless of elastic strain, despite the competing antiferrodistortive instability. Thus, in combination with weak ferromagnetic order, this material is expected to be multiferroic1. Here, we report the growth of epitaxial NaMnF3 thin films on SrTiO3(100) single crystal substrates via Molecular Beam Epitaxy (MBE). Structural qualities of the films were studied as a function of the substrate temperature and film thickness by the techniques of X-ray diffraction (XRD), in-situ reflection high-energy electron diffraction (RHEED), and atomic force microscopy (AFM). The best films were smooth single phase NaMnF3, grown with four in-plane and two out-of-plane twin domains.

  3. Soft Crystals in Flatland: Unraveling Epitaxial Growth.

    PubMed

    Ward, Michael D

    2016-07-26

    Thin film epitaxy typically invokes a superposition of a pair of rigid two-dimensional lattices with a well-defined orientation governed by some form of commensurism. A report by Meissner et al. in this issue of ACS Nano demonstrates that the organization of organic molecules on substrates may not be that simple, as static distortion waves involving miniscule shifts of atomic positions from substrate lattice points can lead to orientations of a molecular film that cannot be described by often used models. Herein, we provide some highlights of epitaxy, with a focus on configurations that reflect the delicate balance between intermolecular interactions within a molecular film and molecule-substrate interactions. Although geometric models for explaining and predicting epitaxial configurations can be used to guide synthesis of materials, their use must recognize energetic factors and the possibility of more complex, and possibly less predictable, interface structures.

  4. Epitaxial growth of two-dimensional stanene

    NASA Astrophysics Data System (ADS)

    Zhu, Feng-Feng; Chen, Wei-Jiong; Xu, Yong; Gao, Chun-Lei; Guan, Dan-Dan; Liu, Can-Hua; Qian, Dong; Zhang, Shou-Cheng; Jia, Jin-Feng

    2015-10-01

    Following the first experimental realization of graphene, other ultrathin materials with unprecedented electronic properties have been explored, with particular attention given to the heavy group-IV elements Si, Ge and Sn. Two-dimensional buckled Si-based silicene has been recently realized by molecular beam epitaxy growth, whereas Ge-based germanene was obtained by molecular beam epitaxy and mechanical exfoliation. However, the synthesis of Sn-based stanene has proved challenging so far. Here, we report the successful fabrication of 2D stanene by molecular beam epitaxy, confirmed by atomic and electronic characterization using scanning tunnelling microscopy and angle-resolved photoemission spectroscopy, in combination with first-principles calculations. The synthesis of stanene and its derivatives will stimulate further experimental investigation of their theoretically predicted properties, such as a 2D topological insulating behaviour with a very large bandgap, and the capability to support enhanced thermoelectric performance, topological superconductivity and the near-room-temperature quantum anomalous Hall effect.

  5. Enhancing Dopant Solubility via Epitaxial Surfactant Growth

    SciTech Connect

    Zhang, L.; Yan, Y.; Wei, S.-H.

    2009-01-01

    A general concept for enhancing dopant solubility via epitaxial surfactant growth is proposed. The key of the concept is to find the appropriate surfactants that generate high (low) levels that can transfer electrons (holes) to dopant acceptor (donor) levels in p-type (n-type) doping, thus significantly lowering the formation energy of dopants. Using first-principles density-functional calculations, our concept explains excellently the recently discovered dual-surfactant effect of Sb and H on enhancing Zn doping in epitaxially grown GaP(100) thin film and suggests that sole surfactant Te can also induce enhancement of N solubility in ZnSe(100) film. We also proposed the surfactants for enhancing p-type doing of ZnO with epitaxial growth with (000{bar 1}) surface. General rules for selecting surfactants for enhancing both p-type and n-type dopings are provided.

  6. Magnetic phase diagram of epitaxial dysprosium

    NASA Astrophysics Data System (ADS)

    Tsui, F.; Flynn, C. P.

    1993-08-01

    We have determined the magnetic phase diagram of Dy as a function of epitaxial strain ɛ, applied field H, and temperature T. $roman Y sub x roman Lu sub 1-x- alloys were employed as templates to clamp the films at selected strains. The separate roles of epitaxial clamping and strain are identified for the first time. There is a clearly defined transition as the strain is changed at low temperature from the clamped helical phase to the ferromagnetic phase. The transition is modeled by a linear coupling treatment of the magnetoelastic strains.

  7. Chemical vapor deposition of epitaxial silicon

    DOEpatents

    Berkman, Samuel

    1984-01-01

    A single chamber continuous chemical vapor deposition (CVD) reactor is described for depositing continuously on flat substrates, for example, epitaxial layers of semiconductor materials. The single chamber reactor is formed into three separate zones by baffles or tubes carrying chemical source material and a carrier gas in one gas stream and hydrogen gas in the other stream without interaction while the wafers are heated to deposition temperature. Diffusion of the two gas streams on heated wafers effects the epitaxial deposition in the intermediate zone and the wafers are cooled in the final zone by coolant gases. A CVD reactor for batch processing is also described embodying the deposition principles of the continuous reactor.

  8. Comparison of orthorhombic and alpha-two titanium aluminides as matrices for continuous SiC-reinforced composites

    NASA Astrophysics Data System (ADS)

    Smith, P. R.; Graves, J. A.; Rhodes, Cg.

    1994-06-01

    The attributes of an orthorhombic Ti aluminide alloy, Ti-21Al-22Nb (at. pct), and an alpha-two Ti aluminide alloy, Ti-24Al-11Nb (at. pct), for use as a matrix with continuous SiC (SCS-6) fiber reinforcement have been compared. Foil-fiber-foil processing was used to produce both unreinforced (“neat”) and unidirectional “SCS-6” reinforced panels. Microstructure of the Ti-24A1-11Nb matrix consisted of ordered Ti3Al ( α 2) + disordered beta (β), while the Ti-21 Al-22Nb matrix contained three phases: α2, ordered beta ( β 0), and ordered orthorhombic (O). Fiber/ matrix interface reaction zone growth kinetics at 982 °C were examined for each composite system. Although both systems exhibited similar interface reaction products (i.e., mixed Ti carbides, silicides, and Ti-Al carbides), growth kinetics in the α 2 + β matrix composite were much more rapid than in the O + β 0 + α 2 matrix composite. Additionally, interfacial reaction in the α 2 + β} composite resulted in a relatively large brittle matrix zone, depleted of beta phase, which was not present in the O + β 0+ α 2 matrix composite. Mechanical property measurements included room and elevated temperature tensile, thermal stability, thermal fatigue, thermo-mechanical fatigue (TMF), and creep. The three-phase orthorhombic-based alloy outperformed the α2+ β alloy in all of these mechanical behavioral areas, on both an absolute and a specific (i.e., density corrected) basis.

  9. An orthorhombic crystal form of cyclohexaicosaose, CA26.32.59 H(2)O: comparison with the triclinic form.

    PubMed

    Nimz, O; Gessler, K; Usón, I; Saenger, W

    2001-11-01

    Cycloamylose containing 26 glucose residues (cyclohexaicosaose, CA26) crystallized from water and 30% (v/v) polyethyleneglycol 400 in the orthorhombic space group P2(1)2(1)2(1) in the highly hydrated form CA26.32.59 H(2)O. X-ray analysis of the crystals at 0.85 A resolution shows that the macrocycle of CA26 is folded into two short left-handed V-amylose helices in antiparallel arrangement and related by a twofold rotational pseudosymmetry as reported recently for the (CA26)(2).76.75 H(2)O triclinic crystal form [Gessler, K. et al. Proc. Natl. Acad. Sci. USA 1999, 96, 4246-4251]. In the orthorhombic crystal form, CA26 molecules are packed in motifs reminiscent of V-amylose in hydrated and anhydrous forms. The intramolecular interface between the V-helices in CA26 is dictated by formation of an extended network of interhelical C-H...O hydrogen bonds; a comparable molecular arrangement is also evident for the intermolecular packing, suggesting that it is a characteristic feature of V-amylose interaction. The hydrophobic channels of CA26 are filled with disordered water molecules arranged in chains and held in position by multiple C-H...O hydrogen bonds. In the orthorhombic and triclinic crystal forms, the structures of CA26 molecules are equivalent but the positions of the individual water molecules are different, suggesting that the patterns of water chains are perturbed even by small structural changes associated with differences in packing arrangements in the two crystal lattices rather than with differences in the CA26 geometry.

  10. Strain effect on electronic structure and thermoelectric properties of orthorhombic SnSe: A first principles study

    SciTech Connect

    Cuong, Do Duc; Rhim, S. H. Hong, Soon Cheol; Lee, Joo-Hyong

    2015-11-15

    Strain effect on thermoelectricity of orthorhombic SnSe is studied using density function theory. The Seebeck coefficients are obtained by solving Boltzmann Transport equation (BTE) with interpolated band energies. As expected from the crystal structure, calculated Seebeck coefficients are highly anisotropic, and agree well with experiment. Changes in the Seebeck coefficients are presented, when strain is applied along b and c direction with strength from -3% to +3%, where influence by band gaps and band dispersions are significant. Moreover, for compressive strains, the sign change of Seebeck coefficients at particular direction suggests that the bipolar transport is possible for SnSe.

  11. Ferromagnetic state in ultrathin orthorhombic CrAs films: Thickness, lattice distortion, and half-metallic contributions

    NASA Astrophysics Data System (ADS)

    Araújo, Alexandre A.; Laks, Bernardo; de Camargo, P. C.

    2006-11-01

    Orthorhombic CrAs thin films were investigated using first-principles spin-polarized calculations in the full-potential linearized augmented plane-wave method. Our results consider two different geometry optimization processes and show that the ferromagnetic state is favored by b -axis expansion, being more stable than the antiferromagnetic state for film thickness below approximately 24Å . The calculated maximum magnetic moment per formula unit is near 3μB and decreases with increasing film thickness, in good agreement with the observed saturation magnetization. The electronic structure of very thin films with expanded b axis suggests a half-metallic behavior.

  12. Part III. The tensile behavior of Ti-Al-Nb O+Bcc orthorhombic alloys

    NASA Astrophysics Data System (ADS)

    Boehlert, C. J.

    2001-08-01

    The tensile behavior of Ti-Al-Nb alloys with Al concentrations between 12 and 26 at. pct and Nb concentrations between 22 and 38 at. pct has been investigated for temperatures between 25 °C and 650 °C. Several microstructural features were evaluated in an attempt to identify microstructure-property relationships. In particular, the effects of the phase volume fraction, composition, morphology, and grain size were examined. In addition, the constitutive properties were evaluated using single-phase microstructures, and the results provided insight into the microstructure-property relationships of the two-phase orthorhombic (O)+body-centered-cubic (bcc) microstructures. The disordered fully-bcc ( β) Ti-12Al-38Nb microstructure, produced through heat treatment above the β-transus, exhibited a room-temperature (RT) elongation of more than 27 pct and the lowest yield strength (YS-553 MPa) of all the alloys studied. The ordered fully-bcc (B2) microstructures, produced through supertransus heat treatment of near-Ti2AlNb alloys, exhibited fracture strengths up to 672 MPa and low elongations-to-failure ( ɛ f≤0.6 pct). Thus, increasing the Al content, which favors ordering of the bcc structure, significantly reduces the ductility of the bcc phase. Similar to the ordered B2 microstructure, the ordered fully-O Ti2AlNb microstructures exhibited intermediate RT strength (≤704 MPa) and ɛ f (≤1 pct). The O+bcc microstructures tended to exhibit strengths greater than both the fully-O and fully-bcc microstructures, and this was attributed to the finer grain sizes in the two-phase microstructures compared to their single-phase counterparts. A RT of 1125 MPa was measured for the finest-grained two-phase microstructure. The O+bcc microstructures containing greater bcc-phase volume fractions tended to exhibit greater elongations yet poorer elevated-temperature strengths. A higher Al content typically resulted in larger elevated-temperature strengths. For the Ti-12Al-38Nb bcc

  13. Encapsulated solid phase epitaxy of a Ge quantum well embedded in an epitaxial rare earth oxide.

    PubMed

    Laha, Apurba; Bugiel, E; Jestremski, M; Ranjith, R; Fissel, A; Osten, H J

    2009-11-25

    An efficient method based on molecular beam epitaxy has been developed to integrate an epitaxial Ge quantum well buried into a single crystalline rare earth oxide. The monolithic heterostructure comprised of Gd2O3-Ge-Gd2O3 grown on an Si substrate exhibits excellent crystalline quality with atomically sharp interfaces. This heterostructure with unique structural quality could be used for novel nanoelectronic applications in quantum-effect devices such as nanoscale transistors with a high mobility channel, resonant tunneling diode/transistors, etc. A phenomenological model has been proposed to explain the epitaxial growth process of the Ge layer under oxide encapsulation using a solid source molecular beam epitaxy technique. PMID:19875877

  14. Epitaxial growth of three dimensionally structured III-V photonic crystal via hydride vapor phase epitaxy

    SciTech Connect

    Zheng, Qiye; Kim, Honggyu; Zhang, Runyu; Zuo, Jianmin; Braun, Paul V.; Sardela, Mauro; Balaji, Manavaimaran; Lourdudoss, Sebastian; Sun, Yan-Ting

    2015-12-14

    Three-dimensional (3D) photonic crystals are one class of materials where epitaxy, and the resultant attractive electronic properties, would enable new functionalities for optoelectronic devices. Here we utilize self-assembled colloidal templates to fabricate epitaxially grown single crystal 3D mesostructured Ga{sub x}In{sub 1−x}P (GaInP) semiconductor photonic crystals using hydride vapor phase epitaxy (HVPE). The epitaxial relationship between the 3D GaInP and the substrate is preserved during the growth through the complex geometry of the template as confirmed by X-ray diffraction (XRD) and high resolution transmission electron microscopy. XRD reciprocal space mapping of the 3D epitaxial layer further demonstrates the film to be nearly fully relaxed with a negligible strain gradient. Fourier transform infrared spectroscopy reflection measurement indicates the optical properties of the photonic crystal which agree with finite difference time domain simulations. This work extends the scope of the very few known methods for the fabrication of epitaxial III-V 3D mesostructured materials to the well-developed HVPE technique.

  15. Epitaxial growth and electrical properties of perovskite HoMnO3 thin films

    NASA Astrophysics Data System (ADS)

    Kan, Daisuke; Murakami, M.; Yu, W.; Greene, R. L.; Cheong, S. W.; Takeuchi, I.

    2008-03-01

    Recently, it was predicted that orthorhombic HoMnO3 would exhibit relatively large polarization (of the order of μC/cm^ 2) due to the existence of a ferroelectric order in the E- type magnetic structure [1]. We have fabricated perovskite HoMnO3 thin films on SrTiO3 (001) substrates by pulsed laser deposition. X-ray 2θ-θ scan shows (00 l) peaks only indicating that there are no secondary phases. The reciprocal space mapping around the SrTiO3 (103) Bragg reflection and the φ scan of the HoMnO3 (103) peak reveals the tetragonal symmetry of the films and the epitaxial relationship, [100]HoMnO3 // [100]SrTiO3 and [001] HoMnO3 // [001]SrTiO3, confirming that the film has the perovskite structure and not the hexagonal one. The films show good insulating properties at low temperatures. We will present electrical properties of the films including results of PUND measurements in applied magnetic field below the Neel temperature. This work is supported by NSF MRSEC, ARO, and the W. M. Keck Foundation. [1] Sergienko et al., PRL 97, 227204 (2006).

  16. Multiferroic fluoride BaCoF4 Thin Films Grown Via Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Borisov, Pavel; Johnson, Trent; García-Castro, Camilo; Kc, Amit; Schrecongost, Dustin; Cen, Cheng; Romero, Aldo; Lederman, David

    Multiferroic materials exhibit exciting physics related to the simultaneous presence of multiple long-range orders, in many cases consisting of antiferromagnetic (AF) and ferroelectric (FE) orderings. In order to provide a new, promising route for fluoride-based multiferroic material engineering, we grew multiferroic fluoride BaCoF4 in thin film form on Al2O3 (0001) substrates by molecular beam epitaxy. The films grow with the orthorhombic b-axis out-of-plane and with three in-plane structural twin domains along the polar c-axis directions. The FE ordering in thin films was verified by FE remanent hysteresis loops measurements at T = 14 K and by room temperature piezoresponse force microscopy (PFM). An AF behavior was found below Neel temperature TN ~ 80 K, which is in agreement with the bulk properties. At lower temperatures two additional magnetic phase transitions at 19 K and 41 K were found. First-principles calculations demonstrated that the growth strain applied to the bulk BaCoF4 indeed favors two canted spin orders, along the b- and a-axes, respectively, in addition to the main AF spin order along the c-axis. Supported by FAME (Contract 2013-MA-2382), WV Research Challenge Grant (HEPC.dsr.12.29), and DMREF-NSF 1434897.

  17. Epitaxial solar-cell fabrication, phase 2

    NASA Technical Reports Server (NTRS)

    Daiello, R. V.; Robinson, P. H.; Kressel, H.

    1977-01-01

    Dichlorosilane (SiH2Cl2) was used as the silicon source material in all of the epitaxial growths. Both n/p/p(+) and p/n/n(+) structures were studied. Correlations were made between the measured profiles and the solar cell parameters, especially cell open-circuit voltage. It was found that in order to obtain consistently high open-circuit voltage, the epitaxial techniques used to grow the surface layer must be altered to obtain very abrupt doping profiles in the vicinity of the junction. With these techniques, it was possible to grow reproducibly both p/n/n(+) and n/p/p(+) solar cell structures having open-circuit voltages in the 610- to 630-mV range, with fill-factors in excess of 0.80 and AM-1 efficiencies of about 13%. Combinations and comparisons of epitaxial and diffused surface layers were also made. Using such surface layers, we found that the blue response of epitaxial cells could be improved, resulting in AM-1 short-circuit current densities of about 30 mA/cm sq. The best cells fabricated in this manner had AM-1 efficiency of 14.1%.

  18. Improved Boat For Liquid-Phase Epitaxy

    NASA Technical Reports Server (NTRS)

    Connolly, John C.

    1991-01-01

    Liquid-phase epitaxial (LPE) growth boat redesigned. Still fabricated from ultra-high-purity graphite, but modified to permit easy disassembly and cleaning, along with improved wiping action for more complete removal of melt to reduce carry-over of gallium. Larger substrates and more uniform composition obtained.

  19. Epitaxy of semiconductor-superconductor nanowires.

    PubMed

    Krogstrup, P; Ziino, N L B; Chang, W; Albrecht, S M; Madsen, M H; Johnson, E; Nygård, J; Marcus, C M; Jespersen, T S

    2015-04-01

    Controlling the properties of semiconductor/metal interfaces is a powerful method for designing functionality and improving the performance of electrical devices. Recently semiconductor/superconductor hybrids have appeared as an important example where the atomic scale uniformity of the interface plays a key role in determining the quality of the induced superconducting gap. Here we present epitaxial growth of semiconductor-metal core-shell nanowires by molecular beam epitaxy, a method that provides a conceptually new route to controlled electrical contacting of nanostructures and the design of devices for specialized applications such as topological and gate-controlled superconducting electronics. Our materials of choice, InAs/Al grown with epitaxially matched single-plane interfaces, and alternative semiconductor/metal combinations allowing epitaxial interface matching in nanowires are discussed. We formulate the grain growth kinetics of the metal phase in general terms of continuum parameters and bicrystal symmetries. The method realizes the ultimate limit of uniform interfaces and seems to solve the soft-gap problem in superconducting hybrid structures. PMID:25581626

  20. Epitaxy of semiconductor-superconductor nanowires

    NASA Astrophysics Data System (ADS)

    Krogstrup, P.; Ziino, N. L. B.; Chang, W.; Albrecht, S. M.; Madsen, M. H.; Johnson, E.; Nygård, J.; Marcus, C. M.; Jespersen, T. S.

    2015-04-01

    Controlling the properties of semiconductor/metal interfaces is a powerful method for designing functionality and improving the performance of electrical devices. Recently semiconductor/superconductor hybrids have appeared as an important example where the atomic scale uniformity of the interface plays a key role in determining the quality of the induced superconducting gap. Here we present epitaxial growth of semiconductor-metal core-shell nanowires by molecular beam epitaxy, a method that provides a conceptually new route to controlled electrical contacting of nanostructures and the design of devices for specialized applications such as topological and gate-controlled superconducting electronics. Our materials of choice, InAs/Al grown with epitaxially matched single-plane interfaces, and alternative semiconductor/metal combinations allowing epitaxial interface matching in nanowires are discussed. We formulate the grain growth kinetics of the metal phase in general terms of continuum parameters and bicrystal symmetries. The method realizes the ultimate limit of uniform interfaces and seems to solve the soft-gap problem in superconducting hybrid structures.

  1. Phase stability, mechanical and thermodynamic properties of orthorhombic and trigonal MgSiN2: an ab initio study

    NASA Astrophysics Data System (ADS)

    Arab, Fahima; Sahraoui, F. Ali; Haddadi, Khelifa; Bouhemadou, Abdelmadjid; Louail, Layachi

    2016-05-01

    Structural stability and mechanical and thermodynamic properties of the orthorhombic and trigonal MgSiN2 polymorphs (or-MgSiN2 and tr-MgSiN2) were investigated through density functional theory and quasi-harmonic Debye model (QHDM). Our calculations show that or-MgSiN2 is energetically the stable polymorph at low pressure, in agreement with previous experimental and theoretical study. Under pressure, a crystallographic transition from the orthorhombic structure to the trigonal one occurs around 25, 17.45 and 19.05 GPa as obtained from the generalized gradient approximation of Perdew-Wang (GGA-PW91), the generalized gradient approximation parameterized recently by Perdew et al (GGA-PBEsol) and the local density approximation developed by Ceperley and Alder and parameterized by Perdew and Zunger (LDA-CAPZ), respectively. Single-crystalline and polycrystalline elastic constants and related properties, namely Vickers hardness, acoustic Grüneisen parameter, minimum thermal conductivity, isotropic sound velocities and Debye temperature, were numerically estimated for both or-MgSiN2 and tr-MgSiN2. We have showed that the hardness of tr-MgSiN2 is comparable to that of the harder materials like c-BN and B6O. Temperature and pressure dependencies of volume, bulk modulus, thermal expansion, Grüneisen parameter, heat capacities and Debye temperature were investigated using QHDM.

  2. First-principles calculations of properties of orthorhombic iron carbide Fe7C3 at the Earth's core conditions

    NASA Astrophysics Data System (ADS)

    Raza, Zamaan; Shulumba, Nina; Caffrey, Nuala M.; Dubrovinsky, Leonid; Abrikosov, Igor A.

    2015-06-01

    A recently discovered phase of orthorhombic iron carbide o-Fe7C3 [Prescher et al., Nat. Geosci. 8, 220 (2015), 10.1038/ngeo2370] is assessed as a potentially important phase for interpretation of the properties of the Earth's core. In this paper, we carry out first-principles calculations on o-Fe7C3 , finding properties to be in broad agreement with recent experiments, including a high Poisson's ratio (0.38). Our enthalpy calculations suggest that o-Fe7C3 is more stable than Eckstrom-Adcock hexagonal iron carbide (h-Fe7C3 ) below approximately 100 GPa. However, at 150 GPa, the two phases are essentially degenerate in terms of Gibbs free energy, and further increasing the pressure towards Earth's core conditions stabilizes h-Fe7C3 with respect to the orthorhombic phase. Increasing the temperature tends to stabilize the hexagonal phase at 360 GPa, but this trend may change beyond the limit of the quasiharmonic approximation.

  3. Electrochemical characterization of orthorhombic Na{sub x}MnO{sub 2} for alkali metal polymer batteries

    SciTech Connect

    Doeff, M.M.; Ding, Lie; DeJonghe, L.C.

    1995-04-01

    Electrochemical potential spectroscopy (ECPS) has been used successfully to observe and explain ordering transitions in orthorhombic Na{sub x}MnO{sub 2} as it is discharged in a sodium/polymer cell. Features can be assigned on the basis of sequential filling of sites in the small and then the large tunnels of the structure as the reduction progresses. Intercalation of lithium into Na{sub x}MnO{sub 2} may be less straightforward than that of sodium, and is worthy of investigation by ECPS. Li/Na{sub x}MnO{sub 2} cells have a greater discharge capacity than Na/Na{sub x}MnO{sub 2} cells, suggesting that more than four lithiums per large tunnel can be inserted. (It is also possible, but less likely that more than one lithium can be placed inside the small tunnels.) This implies that the sites for lithium occupancy might be somewhat different than that for sodium. Further investigation into the properties of orthorhombic Na{sub x}MnO{sub 2} and its utility as a positive electrode for rechargeable sodium and lithium cells is presently underway in this laboratory.

  4. Design, fabrication and characterization of epitaxial and non-epitaxial thermophotovoltaic cells

    NASA Astrophysics Data System (ADS)

    Rahimi, Nassim

    Thermophotovoltaics (TPVs) have significant potential in efficiently converting thermal energy to electrical energy. These applications include conversion from internal combustion engines, small nuclear sources and even portable fuel-based sources. Group-III antimonide semiconductors have been identified as the material of choice for such TPV devices due to the possibility of growing materials with the bandgap energies of 0.51 eV (GaInAsSb quaternary) to 0.72 eV (GaSb binary) that are correspond to commonly available heat sources. The quaternary alloys are grown epitaxially while the binary GaSb devices can be realized through non-epitaxial techniques. In this work, we have pursued fabrication and design methods that will allow us to realize large area GaSb-based diode technology for TPV applications. TPV yield is a serious issue in such large area devices. Functional TPV cells using epitaxial GaSb, epitaxial GaInAsSb, and implanted GaSb with areas up to 1 square cm are realized. The epitaxial cells fabricated in this study allow for the engineering of the bandgap in the structure and also allows for the tailoring of the absorber in the cell to 2.4 microm which is a blackbody wavelength of interest. These cells however are not straightforward to scale in dimension due to the presence of large epitaxy related defects that end up shorting the devices. We have identified and mitigated the effect of such shunt defects that were limiting the yield of the epitaxial TPVs on GaSb. The Non-epitaxial TPV cells are realized using beryllium ion implantation into an n-type GaSb substrate. Through the use of rapid thermal annealing a pn junction is formed. The ion-implanted approach is intended to maximize shunt resistance compared to the epitaxial technique. The presentation will involve in-depth characterization and analysis of the materials from the quality of the semiconductor materials and interfaces to the ohmic contacts. Extensive analysis of the material using

  5. Selective area epitaxy of CdTe

    NASA Astrophysics Data System (ADS)

    Luo, Y. Y.; Cavus, A.; Tamargo, M. C.

    1997-06-01

    We have performed selective area epitaxy (SAE) of CdTe layers grown by molecular beam epitaxy using a shadow mask technique. This technique was chosen over other SAE techniques due to its simplicity and its compatibility with multiple SAE patterning steps. Features as small as 50 microns × 50 microns were obtained with sharp, abrupt side walls and flat mesa tops. Separations between mesas as small as 20 microns were also obtained. Shadowing effects due to the finite thickness of the mask were reduced by placing the CdTe source in a near normal incidence position. Intimate contact between the mask and the substrate was essential in order to achieve good pattern definition.

  6. Wafer bonded epitaxial templates for silicon heterostructures

    NASA Technical Reports Server (NTRS)

    Atwater, Harry A., Jr. (Inventor); Zahler, James M. (Inventor); Morral, Anna Fontcubera I (Inventor)

    2008-01-01

    A heterostructure device layer is epitaxially grown on a virtual substrate, such as an InP/InGaAs/InP double heterostructure. A device substrate and a handle substrate form the virtual substrate. The device substrate is bonded to the handle substrate and is composed of a material suitable for fabrication of optoelectronic devices. The handle substrate is composed of a material suitable for providing mechanical support. The mechanical strength of the device and handle substrates is improved and the device substrate is thinned to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. An upper portion of the device film exfoliated from the device substrate is removed to provide a smoother and less defect prone surface for an optoelectronic device. A heterostructure is epitaxially grown on the smoothed surface in which an optoelectronic device may be fabricated.

  7. Domain epitaxy for thin film growth

    DOEpatents

    Narayan, Jagdish

    2005-10-18

    A method of forming an epitaxial film on a substrate includes growing an initial layer of a film on a substrate at a temperature T.sub.growth, said initial layer having a thickness h and annealing the initial layer of the film at a temperature T.sub.anneal, thereby relaxing the initial layer, wherein said thickness h of the initial layer of the film is greater than a critical thickness h.sub.c. The method further includes growing additional layers of the epitaxial film on the initial layer subsequent to annealing. In some embodiments, the method further includes growing a layer of the film that includes at least one amorphous island.

  8. Wafer bonded epitaxial templates for silicon heterostructures

    DOEpatents

    Atwater, Jr., Harry A.; Zahler, James M.; Morral, Anna Fontcubera I

    2008-03-11

    A heterostructure device layer is epitaxially grown on a virtual substrate, such as an InP/InGaAs/InP double heterostructure. A device substrate and a handle substrate form the virtual substrate. The device substrate is bonded to the handle substrate and is composed of a material suitable for fabrication of optoelectronic devices. The handle substrate is composed of a material suitable for providing mechanical support. The mechanical strength of the device and handle substrates is improved and the device substrate is thinned to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. An upper portion of the device film exfoliated from the device substrate is removed to provide a smoother and less defect prone surface for an optoelectronic device. A heterostructure is epitaxially grown on the smoothed surface in which an optoelectronic device may be fabricated.

  9. Resonant orbitals in fluorinated epitaxial graphene.

    PubMed

    Gunasinghe, R N; Samarakoon, D K; Arampath, A B; Shashikala, H B M; Vilus, J; Hall, J H; Wang, X-Q

    2014-09-21

    Fluorinated epitaxial graphene has potential applications in organic electronics. We present the calculation results by means of first-principles density-functional-theory for various fluorination patterns. Our results indicate that semi-fluorinated graphene conformations follow the same energetic order as the corresponding hydrogenated graphene counterparts. The distinctive electronic properties between semi-hydrogenated graphene and semi-fluorinated graphene are attributed to the polar covalent C-F bond in contrast to the covalent C-H bond. The partial ionic character of the C-F bond results in the hyperconjugation of C-F σ-bonds with an sp(2) network of graphene. Resonant orbitals stabilize the stirrup conformation via the gauche effect. Resonant orbitals also lead to electron doping of the sp(2) network and enhanced excitonic effect. The implications of resonant-orbital-induced doping for the electronic and magnetic properties of fluorinated epitaxial graphene are discussed.

  10. Photoluminescence studies in epitaxial CZTSe thin films

    NASA Astrophysics Data System (ADS)

    Sendler, Jan; Thevenin, Maxime; Werner, Florian; Redinger, Alex; Li, Shuyi; Hägglund, Carl; Platzer-Björkman, Charlotte; Siebentritt, Susanne

    2016-09-01

    Epitaxial Cu 2 ZnSnSe 4 (CZTSe) thin films were grown by molecular beam epitaxy on GaAs(001) using two different growth processes, one containing an in-situ annealing stage as used for solar cell absorbers and one for which this step was omitted. Photoluminescences (PL) measurements carried out on these samples show no dependence of the emission shape on the excitation intensity at different temperatures ranging from 4 K to 300 K . To describe the PL measurements, we employ a model with fluctuating band edges in which the density of states of the resulting tail states does not seem to depend on the excited charge carrier density. In this interpretation, the PL measurements show that the annealing stage removes a defect level, which is present in the samples without this annealing.

  11. Ferroelectricity and competing interactions in Ho-deficient non-stoichiometric orthorhombic HoMnO{sub 3}

    SciTech Connect

    Wang, J. X.; Yan, Z. B.; Xie, Y. L.; Zhou, X. H.; Liu, J.-M.

    2015-05-07

    We investigate the consequences of the Ho-deficient non-stoichiometry in orthorhombic HoMnO{sub 3} in terms of microscopic mechanisms for ferroelectricity modulation. It is suggested that the Ho-deficiency (then Mn excess) results in Ho-vacancies and then Mn occupation of the Ho-site with increasing non-stoichiometry. The Ho-deficiency enhances the Mn-Mn symmetric exchange striction by suppressing the independent Ho-Ho interaction, and thus benefits to the induced Ho spin ordering against the independent Ho spin ordering. The symmetric Ho-Mn exchange striction is thus enhanced by this induced Ho spin ordering, leading to remarkably enhanced ferroelectric polarization as observed. This work presents an alternative scheme to modulate the multiferroicity in rare-earth manganites of strong 4f-3d coupling.

  12. Scattering of an electromagnetic plane wave by a homogeneous sphere made of an orthorhombic dielectric-magnetic material.

    PubMed

    Ulfat Jafri, A D; Lakhtakia, Akhlesh

    2014-01-01

    An exact transition matrix was formulated for electromagnetic scattering by an orthorhombic dielectric-magnetic sphere whose permeability dyadic is a scalar multiple of its permittivity dyadic. Calculations were made for plane waves incident on the sphere. As the size parameter increases, the role of anisotropy evolves; multiple lobes appear in the plots of the differential scattering efficiency in any scattering plane; the total scattering, extinction, and forward-scattering efficiencies exhibit a prominent maximum each; and the absorption efficiency generally increases with weak undulations. Certain orientations of the sphere with respect to the directions of propagation and the electric field of the incident plane wave make it highly susceptible to detection in a monostatic configuration, whereas other orientations make it much less vulnerable to detection. Impedance match to the ambient free space decreases backscattering efficiency significantly, although anisotropy prevents null backscattering. PMID:24561944

  13. Lithium insertion processes of orthorhombic Na{sub x}MnO{sub 2}-based electrode materials

    SciTech Connect

    Doeff, M.M.; Richardson, T.J.; Kepley, L.

    1996-08-01

    Electrochemical, thermal, and structural characterization of lithium insertion processes into orthorhombic Na{sub x}MnO{sub 2}-based materials is presented. Chimie douce oxidation, reduction, and/or exchange reactions of the precursor Na{sub 0.44}MnO{sub 2} can be used to prepare high capacity (180 mAh/g), high potential compounds for use in secondary lithium batteries. Lithiated Na{sub x}MnO{sub 2} is quite stable; formation of spinel phases occurs only under conditions of prolonged severe abuse during cycling in electrochemical cells, or upon heating to 500 C. The lithium-ion intercalation process is considerably more complex than that for sodium ions; features are seen in the electrochemical potential-step experiments that may be attributed to several phase transitions. These results are interpreted in terms of the unusual structure, and implications for future use of these materials in lithium batteries are discussed.

  14. Scattering of an electromagnetic plane wave by a homogeneous sphere made of an orthorhombic dielectric-magnetic material.

    PubMed

    Ulfat Jafri, A D; Lakhtakia, Akhlesh

    2014-01-01

    An exact transition matrix was formulated for electromagnetic scattering by an orthorhombic dielectric-magnetic sphere whose permeability dyadic is a scalar multiple of its permittivity dyadic. Calculations were made for plane waves incident on the sphere. As the size parameter increases, the role of anisotropy evolves; multiple lobes appear in the plots of the differential scattering efficiency in any scattering plane; the total scattering, extinction, and forward-scattering efficiencies exhibit a prominent maximum each; and the absorption efficiency generally increases with weak undulations. Certain orientations of the sphere with respect to the directions of propagation and the electric field of the incident plane wave make it highly susceptible to detection in a monostatic configuration, whereas other orientations make it much less vulnerable to detection. Impedance match to the ambient free space decreases backscattering efficiency significantly, although anisotropy prevents null backscattering.

  15. Theoretical investigations of the optical and EPR spectra for trivalent cerium and ytterbium ions in orthorhombic YF3 crystal

    NASA Astrophysics Data System (ADS)

    Liu, Hong-Gang; Zheng, Wen-Chen

    2016-09-01

    The optical spectra and electron paramagnetic resonance (EPR) parameters (g factors and hyperfine structure constants A) for trivalent cerium and ytterbium ions in YF3 crystal with orthorhombic structure are investigated together by the complete diagonalization (of energy matrix) method (CDM). The obtained results are in reasonable agreement with the experimental ones. More importantly, two magnetically nonequivalent centers in YF3 crystal observed in EPR experiments are confirmed and ascribed to their specific positions in a unit cell by our calculations based on superposition model (SPM) analysis. Such identification of local sites with different magnetic properties would help us to understand not only the EPR spectra and magnetic susceptibility of other lanthanide ions doped in crystals with the same structure as YF3 but also the energy transfer scheme between two lanthanide ions occupying such two sites. All results are discussed carefully.

  16. Method of deposition by molecular beam epitaxy

    DOEpatents

    Chalmers, Scott A.; Killeen, Kevin P.; Lear, Kevin L.

    1995-01-01

    A method is described for reproducibly controlling layer thickness and varying layer composition in an MBE deposition process. In particular, the present invention includes epitaxially depositing a plurality of layers of material on a substrate with a plurality of growth cycles whereby the average of the instantaneous growth rates for each growth cycle and from one growth cycle to the next remains substantially constant as a function of time.

  17. Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells: Preprint

    SciTech Connect

    Young, D. L.; Li, J. V.; Teplin, C. W.; Stradins, P.; Branz, H. M.

    2011-07-01

    We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

  18. Superconductivity in Ca-intercalated epitaxial graphene on silicon carbide

    NASA Astrophysics Data System (ADS)

    Li, Kang; Feng, Xiao; Zhang, Wenhao; Ou, Yunbo; Chen, Lianlian; He, Ke; Wang, Li-Li; Guo, Liwei; Liu, Guodong; Xue, Qi-Kun; Ma, Xucun

    2013-08-01

    We have prepared Ca-intercalated multilayer epitaxial graphene films on silicon carbide and observed superconductivity in them with both magnetic and transport measurements. Superconducting transition has been detected at temperature up to 7 K in Ca-intercalated epitaxial graphene with the thickness down to 10 layers grown on both Si-face and C-face of silicon carbide. The result demonstrates intercalated epitaxial graphene as a good platform to study graphene-based superconductivity.

  19. Photo-and pressure-induced transformations in the linear orthorhombic polymer of C{sub 60}

    SciTech Connect

    Meletov, K. P. Davydov, V. A.; Arvanitidis, J.; Christofilos, D.; Andrikopoulos, K. S.; Kourouklis, G. A.

    2008-10-15

    Stability of the linear orthorhombic polymer of C{sub 60} under pressure and laser irradiation is studied by Raman scattering and X-ray diffraction measurements. The Raman spectrum at ambient pressure remains unchanged, in the time scale of the experiment, up to an intensity of 3200 W/cm{sup 2} of the 514.5 nm line of an Ar{sup +} laser, but irreversible changes are observed at higher intensities. The Raman spectra recorded at increased pressure show similar irreversible changes even at the laser intensity as low as 470 W/cm{sup 2}. The X-ray diffraction and Raman measurements of the pressure-treated samples, performed after pressure release, show that the nonirradiated material does not exhibit any changes in the crystal structure and phonon spectra. This behavior indicates a pressure-enhanced photo-induced transformation to a new polymeric phase characterized by a Raman spectrum that differs from those of the other known polymeric phases of C{sub 60}. The Raman spectra of the phototransformed linear orthorhombic polymer of C{sub 60} were measured at a pressure of up to 29 GPa. The pressure dependence of the Raman mode frequencies show singularities near 4 GPa and 15 GPa, respectively, related to a reversible phase transition and an irreversible transformation to a metastable disordered phase. The diffuse Raman spectrum of the disordered phase does not exhibit substantial changes with an increase in pressure up to 29 GPa. The high-pressure phase transforms to a mixture of pristine and dimerized C{sub 60}, after pressure release and exposure to ambient conditions for 30 h.

  20. Growth of pseudomorphic structures through organic epitaxy

    SciTech Connect

    Kaviyil, Sreejith Embekkat; Sassella, Adele; Borghesi, Alessandro; Campione, Marcello; Su Genbo; He Youping; Chen Chenjia

    2012-12-14

    The control of molecular orientation in thin solid film phases of organic semiconductors is a basic factor for the exploitation of their physical properties for optoelectronic devices. We compare structural and optical properties of thin films of the organic semiconductor {alpha}-quarterthiophene grown by molecular beam epitaxy on different organic substrates. We show how epitactic interactions, characteristic of the surface of organic crystals, can drive the orientation of the crystalline overlayer and the selection of specific polymorphs and new pseudomorphic phases. We identify a key role in this phenomenon played by the marked groove-like corrugations present in some organic crystal surfaces. Since different polymorphs possess rather different performance in terms of, e.g., charge carrier mobility, this strategy is demonstrated to allow for the growth of oriented phases with enhanced physical properties, while keeping the substrate at room temperature. These results provide useful guidelines for the design of technological substrates for organic epitaxy and they substantiate the adoption of an organic epitaxy approach for the fabrication of optoelectronic devices based on thin films of organic semiconductors.

  1. Electron holography of devices with epitaxial layers

    SciTech Connect

    Gribelyuk, M. A. Ontalus, V.; Baumann, F. H.; Zhu, Z.; Holt, J. R.

    2014-11-07

    Applicability of electron holography to deep submicron Si devices with epitaxial layers is limited due to lack of the mean inner potential data and effects of the sample tilt. The mean inner potential V{sub 0} = 12.75 V of the intrinsic epitaxial SiGe was measured by electron holography in devices with Ge content C{sub Ge} = 18%. Nanobeam electron diffraction analysis performed on the same device structure showed that SiGe is strain-free in [220] direction. Our results showed good correlation with simulations of the mean inner potential of the strain-free SiGe using density function theory. A new method is proposed in this paper to correct electron holography data for the overlap of potentials of Si and the epitaxial layer, which is caused by the sample tilt. The method was applied to the analysis of the dopant diffusion in p-Field-effect Transistor devices with the identical gate length L = 30 nm, which had alternative SiGe geometry in the source and drain regions and was subjected to different thermal processing. Results have helped to understand electrical data acquired from the same devices in terms of dopant diffusion.

  2. Selective epitaxy using the gild process

    DOEpatents

    Weiner, Kurt H.

    1992-01-01

    The present invention comprises a method of selective epitaxy on a semiconductor substrate. The present invention provides a method of selectively forming high quality, thin GeSi layers in a silicon circuit, and a method for fabricating smaller semiconductor chips with a greater yield (more error free chips) at a lower cost. The method comprises forming an upper layer over a substrate, and depositing a reflectivity mask which is then removed over selected sections. Using a laser to melt the unmasked sections of the upper layer, the semiconductor material in the upper layer is heated and diffused into the substrate semiconductor material. By varying the amount of laser radiation, the epitaxial layer is formed to a controlled depth which may be very thin. When cooled, a single crystal epitaxial layer is formed over the patterned substrate. The present invention provides the ability to selectively grow layers of mixed semiconductors over patterned substrates such as a layer of Ge.sub.x Si.sub.1-x grown over silicon. Such a process may be used to manufacture small transistors that have a narrow base, heavy doping, and high gain. The narrowness allows a faster transistor, and the heavy doping reduces the resistance of the narrow layer. The process does not require high temperature annealing; therefore materials such as aluminum can be used. Furthermore, the process may be used to fabricate diodes that have a high reverse breakdown voltage and a low reverse leakage current.

  3. Layered-structural monoclinic–orthorhombic perovskite La{sub 2}Ti{sub 2}O{sub 7} to orthorhombic LaTiO{sub 3} phase transition and their microstructure characterization

    SciTech Connect

    Herrera, G.; Jiménez-Mier, J.; Chavira, E.

    2014-03-01

    The layered-structural ceramics, such as lanthanum titanate (La{sub 2}Ti{sub 2}O{sub 7}), have been known for their good temperature and low dielectric loss at microwave frequencies that make them good candidate materials for high frequency applications. However, few studies have been conducted on the synthesis optimization by sol gel reaction, in particular by acrylamide polymerization route. The interest in La{sub 2}Ti{sub 2}O{sub 7} ceramic has been greatly increased recently due to the effect of oriented grains. This anisotropy of the microstructure leads to anisotropy in dielectric, electrical and mechanical properties. In this study, grain oriented lanthanum titanate was produced by the sol–gel acrylamide polymerization route. The characterizations of the samples were achieved by thermal analysis, X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and transmission electron microscopy (TEM). X-ray diffraction indicates that the formation of monoclinic perovskite La{sub 2}Ti{sub 2}O{sub 7} nanocrystals is a necessary first step to obtain orthorhombic LaTiO{sub 3} nanocomposites (with space group Pbnm). In this work we identified that the monoclinic perovskite La{sub 2}Ti{sub 2}O{sub 7} with space group P2{sub 1} transforms its structure into one with the orthorhombic space group Cmc2{sub 1} at approximately 1073 K. The microstructure associated consisted of flaky monoclinic La{sub 2}Ti{sub 2}O{sub 7} nanocomposites in comparison with round-shaped LaTiO{sub 3} nanocomposites. - Highlights: • The flaky-like La{sub 2}Ti{sub 2}O{sub 7} compound was synthesized by sol–gel acrylamide route. • Simultaneous monitoring of the DTA and XRD with temperature was performed. • Phase transformation characterization of La{sub 2}Ti{sub 2}O{sub 7} has been carried out. • The variation of the La{sub 2}Ti{sub 2}O{sub 7} and LaTiO{sub 3} grain morphology has been compared.

  4. ZnO epitaxy on (111) Si using epitaxial Lu2O3 buffer layers

    NASA Astrophysics Data System (ADS)

    Guo, W.; Allenic, A.; Chen, Y. B.; Pan, X. Q.; Tian, W.; Adamo, C.; Schlom, D. G.

    2008-02-01

    We report the growth and characterization of single-crystalline, crack-free, epitaxial (0001) ZnO films on (111) Si substrates using intervening epitaxial Lu2O3 buffer layers. The epitaxial orientation relationships are (0001)ZnO∥(111)Lu2O3∥(111)Si and [12¯10]ZnO∥[1¯10]Lu2O3∥[11¯0]Si. X-ray diffraction and transmission electron microscopy reveal that the ZnO films have high structural quality and an atomically sharp ZnO /Lu2O3 interface. Temperature-dependent photoluminescence measurements show optical properties comparable to ZnO single crystals. The films have a resistivity of 0.31Ωcm, an electron concentration of 2.5×1017cm-3, and a mobility of 80cm2/Vṡs at room temperature. The epitaxial growth of ZnO on Si represents a significant step toward the integration of ZnO-based multifunctional devices with Si electronics.

  5. The effect of lattice mismatch on epitaxial La{sub 0.67}Ca{sub 0.33}MnO{sub 3} films.

    SciTech Connect

    Eastell, C. J.; Lin, Y.-K.; Miller, D. J.

    1999-05-06

    We present a study of the effect of lattice mismatch on the structure and magneto-transport properties of La{sub 0.67}Ca{sub 0.33}MnO{sub 3} (LCMO) epitaxial films. Pulsed laser deposition was used to synthesize epitaxial LCMO thin films on LaAlO{sub 3} (LAO), NdGaO{sub 3} (NGO), SrTiO{sub 3} (STO), and MgO substrates. Our results show that the nature of the lattice mismatch and the structure of the substrate governs the microstructure of the film. The microstructure consists of domains of two crystal structures, a pseudo-cubic phase and a monoclinic phase. The monoclinic phase forms as the film relaxes away from the interface, with an orientation dependent on whether the film is under a tensile or compressive in-plane strain. A special case is observed on NGO where the orthorhombic nature of the substrate results in the alignment of the monoclinic phase so that its long axis is in the plane. The observation of an in-plane anisotropy in the magnetoresistance data for LCMO on NGO suggests that the monoclinic phase is important in explaining the magneto-transport properties.

  6. Strain tuning of electronic structure in Bi4Ti3O12-LaCoO3 epitaxial thin films

    SciTech Connect

    Choi, Woo Seok; Lee, Ho Nyung

    2015-05-08

    In this study, we investigated the crystal and electronic structures of ferroelectric Bi4Ti3O12 single-crystalline thin films site-specifically substituted with LaCoO3 (LCO). The epitaxial films were grown by pulsed laser epitaxy on NdGaO3 and SrTiO3 substrates to vary the degree of strain. With increasing the LCO substitution, we observed a systematic increase in the c-axis lattice constant of the Aurivillius phase related with the modification of pseudo-orthorhombic unit cells. These compositional and structural changes resulted in a systematic decrease in the band gap, i.e., the optical transition energy between the oxygen 2p and transition-metal 3d states, based on a spectroscopic ellipsometry study. In particular, the Co 3d state seems to largely overlap with the Ti t2g state, decreasing the band gap. Interestingly, the applied tensile strain facilitates the band-gap narrowing, demonstrating that epitaxial strain is a useful tool to tune the electronic structure of ferroelectric transition-metal oxides.

  7. Hydrothermal epitaxy of perovskite thin films

    NASA Astrophysics Data System (ADS)

    Chien, Allen T.

    1998-12-01

    This work details the discovery and study of a new process for the growth of epitaxial single crystal thin films which we call hydrothermal epitaxy. Hydrothermal epitaxy is a low temperature solution route for producing heteroepitaxial thin films through the use of solution chemistry and structurally similar substrates. The application of this synthesis route has led to the growth of a variety of epitaxial perovskite (BaTiOsb3, SrTiOsb3, and Pb(Zr,Ti)Osb3 (PZT)) thin films which provides a simple processing pathway for the formation of other materials of technological interest. BaTiOsb3 and PZT heteroepitaxial thin films and powders were produced by the hydrothermal method at 90-200sp°C using various alkali bases. XRD and TEM analysis shows that, in each case, the films and powders form epitaxially with a composition nearly identical to that of the starting precursors. Sequential growth experiments show that film formation initiates by the nucleation of submicron faceted islands at the step edges of the SrTiOsb3 substrates followed by coalescence after longer growth periods. A Ba-rich interfacial layer between the BaTiOsb3 islands and the SrTiOsb3 surface is seen by cross-section TEM during early growth periods. Electrophoretic and Basp{2+} adsorption data provide a chemical basis for the existence of the interfacial layer. Homoepitaxial growth of SrTiOsb3 on SrTiOsb3 also occurs by island growth, suggesting that the growth mode may be a consequence of the aqueous surface chemistry inherent in the process. Film formation is shown to be affected by any number of factors including type of base, pH, temperature, and substrate pretreatments. Different cation bases (Na-, K-, Rb-, Cs-, TMA-OH) demonstrated pronounced changes in powder and film morphology. For example, smaller cation bases (e.g., NaOH, KOH and RbOH) resulted the formation of 1.5 mum \\{100\\} faceted perovskite PbTiOsb3 blocks while larger cation bases (e.g., CsOH and TMA-OH) produced 500 nm sized

  8. Molecular Beam Epitaxial Growth and Characterization of Mismatched Indium Gallium Arsenide and Indium Aluminum Arsenide Layers on Indium Phosphide

    NASA Astrophysics Data System (ADS)

    Bennett, Brian R.

    Mismatched epitaxial layers of In_ {x}Ga_{1-x}As and In_{y}Al_ {1-y}As were grown on (001) InP by molecular beam epitaxy. The layers were characterized by a technique we developed known as variable azimuthal-angle ellipsometry. It reveals large optical anisotropy for many strained layers. We attribute the anisotropy to strain-induced surface roughening during growth. Samples were also characterized by high -resolution x-ray diffraction (HRXRD) to assess layer quality as well as composition and strain. HRXRD measurements reveal orthorhombic distortion of partially relaxed layers of InGaAs and InAlAs in tension or compression, with preferential strain relief in the (110) direction. We show that HRXRD epilayer peak width and interference fringes are sensitive, non-destructive criteria to judge the structural quality of strained heterostructures. For layers ranging from 300 to 10,000 A, with lattice mismatch of +/- 1% or less, the crystalline quality consistently remains high to thicknesses up to 3-9 times the Matthews -Blakeslee critical layer thickness. We investigated the thermal stability of these layers, using HRXRD to measure structural changes caused by high-temperature anneals. We also compared the electron mobility of modulation-doped heterostructures before and after annealing. Both techniques demonstrate that our high-quality strained layers are stable to temperatures of at least 800-850^circ C. We explain this result by the limited sources available for the nucleation of misfit dislocations. The findings are applied to the design and growth of high-performance pseudomorphic InAlAs/InGaAs/InP heterostructure field-effect transistors with layers exceeding the Matthews-Blakeslee limit. (Copies available exclusively from MIT Libraries, Rm. 14-0551, Cambridge, MA 02139-4307. Ph. 617-253-5668; Fax 617-253-1690.).

  9. Perspective: Oxide molecular-beam epitaxy rocks!

    SciTech Connect

    Schlom, Darrell G.

    2015-06-01

    Molecular-beam epitaxy (MBE) is the “gold standard” synthesis technique for preparing semiconductor heterostructures with high purity, high mobility, and exquisite control of layer thickness at the atomic-layer level. Its use for the growth of multicomponent oxides got off to a rocky start 30 yr ago, but in the ensuing decades, it has become the definitive method for the preparation of oxide heterostructures too, particularly when it is desired to explore their intrinsic properties. Examples illustrating the unparalleled achievements of oxide MBE are given; these motivate its expanding use for exploring the potentially revolutionary states of matter possessed by oxide systems.

  10. Materials issues in molecular beam epitaxy

    SciTech Connect

    Tsao, J.Y.

    1993-12-31

    The technology of crystal growth has advanced enormously during the past two decades; among those advances, the development and refinement of molecular beam epitaxy (MBE) has been among the most important. Crystals grown by MBE are more precisely controlled than those grown by any other method, and today form the basis for many of the most advanced device structures in solid-state physics, electronics and optoelectronics. In addition to its numerous device applications, MBE is also an enormously rich and interesting area of materials science in and of itself. This paper, discusses a few examples of some of these materials issues, organized according to whether they involve bulk, thin films, or surfaces.

  11. Deep inelastic neutron scattering from orthorhombic ordered HCl: Short-time proton dynamics and anomalous neutron cross sections

    SciTech Connect

    Senesi, R.; Colognesi, D.; Pietropaolo, A.; Abdul-Redah, T.

    2005-08-01

    Deep inelastic neutron scattering measurements from orthorhombic ordered HCl are presented and analyzed in order to clarify the problem of an anomalous deficit in the neutron-proton cross section found in previous experiments on various materials. A reliable model for the HCl short-time single-particle dynamics, including atomic vibrational anisotropies and deviations from the impulsive approximation, is set up. The model HCl response function is transformed into simulated time-of-flight spectra, taking carefully into account the effects of instrumental resolution and the filter absorption profile used for neutron energy analysis. Finally, the experimental values of the anomalous reduction factor for the neutron-proton cross section are extracted by comparing simulated and experimental data. Results show a 34% reduction of the H cross section, varying with the scattering angle in a range centered at 53 deg. In addition, the same approximate procedure used in earlier studies is also employed, providing results in reasonable agreement with the more rigorous ones, and confirming the substantial reliability of the past work on this subject.

  12. Crystal structure and partial Ising-like magnetic ordering of orthorhombic D y2Ti O5

    NASA Astrophysics Data System (ADS)

    Shamblin, Jacob; Calder, Stuart; Dun, Zhiling; Lee, Minseong; Choi, Eun Sang; Neuefeind, Joerg; Zhou, Haidong; Lang, Maik

    2016-07-01

    The structure and magnetic properties of orthorhombic D y2Ti O5 have been investigated using x-ray diffraction, neutron diffraction, and alternating current (ac)/direct current (dc) magnetic susceptibility measurements. We report a continuous structural distortion below 100 K characterized by negative thermal expansion in the [0 1 0] direction. Neutron diffraction and magnetic susceptibility measurements revealed that two-dimensional (2D) magnetic ordering begins at 3.1 K, which is followed by a three-dimensional magnetic transition at 1.7 K. The magnetic structure has been solved through a representational analysis approach and can be indexed with the propagation vector k =[0 1 /2 0 ] . The spin structure corresponds to a coplanar model of interwoven 2D "sheets" extending in the [0 1 0] direction. The local crystal field is different for each D y3 + ion (Dy1 and Dy2), one of which possesses strong uniaxial symmetry indicative of Ising-like magnetic ordering. Consequently, two succeeding transitions under magnetic field are observed in the ac susceptibility, which are associated with flipping each D y3 + spin independently.

  13. Native defects and Pr impurities in orthorhombic CaTiO3 by first-principles calculations

    NASA Astrophysics Data System (ADS)

    Zhu, Ailing; Wang, Jianchuan; Zhao, Dongdong; Du, Yong

    2011-07-01

    Formation energies of native defects and Pr impurities in orthorhombic CaTiO3 are explored using the first-principles calculations. The Ca vacancy (VCa), Ti vacancy (VTi) and Ca antisite (CaTi) are found to be energetically preferable. The Ti antisite (TiCa) and O vacancy (VO) are not energetically favorable in the wide range of Fermi level. In Pr-doped CaTiO3, Pr substituting for Ca (PrCa) is likely to form under condition A in which CaTiO3 is in equilibrium with CaO and O2. Under condition B (TiO2, CaTiO3 and O2 are in equilibrium), PrTi defect is energetically preferable depending on the Fermi levels. Several native defects and the two sites of Pr impurities in CaTiO3 are coincided with several different defects in Pr-doped CaTiO3 reported in the literature. Based on the present calculations, we can elucidate that the Ca deficiency design of the traditional formula Ca1-xVCa(x/2)PrxTiO3 is not the best for efficient red photoluminescence, which is realized via the experimental measurements.

  14. Crystal Field Splitting is Limiting the Stability and Strength of Ultra-incompressible Orthorhombic Transition Metal Tetraborides

    PubMed Central

    Zhang, R. F.; Wen, X. D.; Legut, D.; Fu, Z. H.; Veprek, S.; Zurek, E.; Mao, H. K.

    2016-01-01

    The lattice stability and mechanical strengths of the supposedly superhard transition metal tetraborides (TmB4, Tm = Cr, Mn and Fe) evoked recently much attention from the scientific community due to the potential applications of these materials, as well as because of general scientific interests. In the present study, we show that the surprising stabilization of these compounds from a high symmetry to a low symmetry structure is accomplished by an in-plane rotation of the boron network, which maximizes the in-plane hybridization by crystal field splitting between d orbitals of Tm and p orbitals of B. Studies of mechanical and electronic properties of TmB4 suggest that these tetraborides cannot be intrinsically superhard. The mechanical instability is facilitated by a unique in-plane or out-of-plane weakening of the three-dimensional covalent bond network of boron along different shear deformation paths. These results shed a novel view on the origin of the stability and strength of orthorhombic TmB4, highlighting the importance of combinational analysis of a variety of parameters related to plastic deformation of the crystalline materials when attempting to design new ultra-incompressible, and potentially strong and hard solids. PMID:26976479

  15. Density Functional Studies of Stoichiometric Surfaces of Orthorhombic Hybrid Perovskite CH3NH3PbI3

    DOE PAGES

    Wang, Yun; Huang, Jingsong; Sumpter, Bobby G.; Zhang, Haimin; Liu, Porun; Yang, Huagui; Zhao, Huijun

    2014-12-19

    Organic/inorganic hybrid perovskite materials are highly attractive for dye-sensitized solar cells as demonstrated by their rapid advances in energy conversion efficiency. In this work, the structures, energetics, and electronic properties for a range of stoichiometric surfaces of the orthorhombic perovskite CH3NH3PbI3 are theoretically studied using density functional theory. Various possible spatially and constitutionally isomeric surfaces are considered by diversifying the spatial orientations and connectivities of surface Pb-I bonds. The comparison of the surface energies for the most stable configurations identified for various surfaces shows that the stabilities of stoichiometric surfaces are mainly dictated by the coordination numbers of surface atoms,more » which are directly correlated with the numbers of broken bonds. Additionally, Coulombic interactions between I anions and organic countercations on the surface also contribute to the stabilization. Electronic properties are compared between the most stable (100) surface and the bulk phase, showing generally similar features except for the lifted band degeneracy and the enhanced bandgap energy for the surface. These studies on the stoichiometric surfaces serve as the first step toward gaining a fundamental understanding of the interfacial properties in the current structural design of perovskite based solar cells, in order to achieve further breakthroughs in solar conversion efficiencies.« less

  16. Density Functional Studies of Stoichiometric Surfaces of Orthorhombic Hybrid Perovskite CH3NH3PbI3

    SciTech Connect

    Wang, Yun; Huang, Jingsong; Sumpter, Bobby G.; Zhang, Haimin; Liu, Porun; Yang, Huagui; Zhao, Huijun

    2014-12-19

    Organic/inorganic hybrid perovskite materials are highly attractive for dye-sensitized solar cells as demonstrated by their rapid advances in energy conversion efficiency. In this work, the structures, energetics, and electronic properties for a range of stoichiometric surfaces of the orthorhombic perovskite CH3NH3PbI3 are theoretically studied using density functional theory. Various possible spatially and constitutionally isomeric surfaces are considered by diversifying the spatial orientations and connectivities of surface Pb-I bonds. The comparison of the surface energies for the most stable configurations identified for various surfaces shows that the stabilities of stoichiometric surfaces are mainly dictated by the coordination numbers of surface atoms, which are directly correlated with the numbers of broken bonds. Additionally, Coulombic interactions between I anions and organic countercations on the surface also contribute to the stabilization. Electronic properties are compared between the most stable (100) surface and the bulk phase, showing generally similar features except for the lifted band degeneracy and the enhanced bandgap energy for the surface. These studies on the stoichiometric surfaces serve as the first step toward gaining a fundamental understanding of the interfacial properties in the current structural design of perovskite based solar cells, in order to achieve further breakthroughs in solar conversion efficiencies.

  17. Pseudotetragonal and orthorhombic ordered structures in substoichiometric YBa2Cu3O6+x oxides at x<0.4

    NASA Astrophysics Data System (ADS)

    Semenovskaya, S.; Khachaturyan, A. G.

    1995-04-01

    The previous analysis [S. Semenovskaya and A.G. Khachaturyan, Phys. Rev. B 46, 6511 (1992); Physica D 66, 205 (1993)] of the structural transformations in nonstoichiometric YBa2Cu3O6+x oxides is extended to a ``tetragonal'' stoichiometry region, x<0.4. Available diffraction data [Th. Zeiske, D. Hohlwein, R. Sonntag, F. Kubanek, and G. Collin, Z. Phys. B 86, 11 (1992); Tan Kemin, Hu Meisheng, and W. Yening, J. Phys. Condens. Matter 1, 1049 (1989)] (on the √2 a0×2 √2 a0 structures formed at small x<0.4) are analyzed by the concentration-wave method and computer-simulation technique. It is found that at small x<0.4, oxygen ordering results in a sequence of transformations different from those observed at x>0.5. It produces the pseudotetragonal and orthorhombic \\{1/4 1) / 4 0\\} phases formed by the (1/21/20) and \\{1/4 1) / 4 0\\} concentration waves. These phases form a family of [110] oxygen-atom chain structures, which are different from the [010] Cu(1)-O chain structures formed at x>0.5. These differences can be explained only if a significant change in oxygen-oxygen (O-O) potential near x~0.4 (where the superconductivity disappears) is assumed. The O-O interaction potential at x<0.4 was estimated and used to perform computer simulations of oxygen ordering kinetics at x=0.25.

  18. Stimulated Raman scattering spectroscopy and χ(3)-nonlinear lasing effects in single crystals of aragonite (orthorhombic CaCO3)

    NASA Astrophysics Data System (ADS)

    Kaminskii, A. A.; Rhee, H.; Lux, O.; Eichler, H. J.; Koltashev, V. V.; Kleinschrodt, R.; Bohatý, L.; Becker, P.

    2012-04-01

    The present work gives a brief review of the nonlinear χ(2)- and χ(3)-lasing properties of SRS-active natural crystals (minerals) known so far. This compilation complements new results of a detailed investigation of Raman induced χ(3)-effects in aragonite single crystals (orthorhombic CaCO3) under single- and dual-wavelength picosecond excitation in the UV, visible and near-IR spectral ranges. The studied effects at room and cryogenic temperatures comprise Stokes and anti-Stokes combs of almost two octaves bandwidth, THG, SFG, as well as cascaded and cross-cascaded χ(3) leftrightarrow χ(3) interactions. All recorded lasing χ(3)-components were identified and attributed to three observed SRS-promoting vibration modes ωSRS1 ≈ 1087 cm-1, ωSRS2 ≈ 152 cm-1, and ωSRS3 ≈ 205 cm-1 (at room temperature) of aragonite. Stimulated Raman scattering (SRS) investigations of minerals so far enrich the arsenal of SRS-active crystals, which can be applied to solve fundamental and applied tasks of modern laser physics and nonlinear optics.

  19. Exceptional ballistic transport in epitaxial graphene nanoribbons.

    PubMed

    Baringhaus, Jens; Ruan, Ming; Edler, Frederik; Tejeda, Antonio; Sicot, Muriel; Taleb-Ibrahimi, Amina; Li, An-Ping; Jiang, Zhigang; Conrad, Edward H; Berger, Claire; Tegenkamp, Christoph; de Heer, Walt A

    2014-02-20

    Graphene nanoribbons will be essential components in future graphene nanoelectronics. However, in typical nanoribbons produced from lithographically patterned exfoliated graphene, the charge carriers travel only about ten nanometres between scattering events, resulting in minimum sheet resistances of about one kilohm per square. Here we show that 40-nanometre-wide graphene nanoribbons epitaxially grown on silicon carbide are single-channel room-temperature ballistic conductors on a length scale greater than ten micrometres, which is similar to the performance of metallic carbon nanotubes. This is equivalent to sheet resistances below 1 ohm per square, surpassing theoretical predictions for perfect graphene by at least an order of magnitude. In neutral graphene ribbons, we show that transport is dominated by two modes. One is ballistic and temperature independent; the other is thermally activated. Transport is protected from back-scattering, possibly reflecting ground-state properties of neutral graphene. At room temperature, the resistance of both modes is found to increase abruptly at a particular length--the ballistic mode at 16 micrometres and the other at 160 nanometres. Our epitaxial graphene nanoribbons will be important not only in fundamental science, but also--because they can be readily produced in thousands--in advanced nanoelectronics, which can make use of their room-temperature ballistic transport properties.

  20. Epitaxial growth of gallium arsenide from elemental arsenic

    NASA Astrophysics Data System (ADS)

    Chu, Ting L.; Chu, Shirley S.; Green, Richard F.; Cerny, C. L. A.

    1991-03-01

    Epitaxial gallium arsenide (GaAs) films of controlled electrical properties are essential for the fabrication of high performance devices. Metalorganic vapor phase epitaxy (MOVPE) utilizing the reaction of trimethylgallium (TMGa) or triethylgallium (TEGa) and arsine (AsH3) is commonly used for the epitaxial growth of GaAs. The use of highly toxic AsH3 however is a serious hazard in research and manufacturing operations. In this work the MOVPE of device quality GaAs from elemental arsenic has been demonstrated for the first time thus minimizing a major safety concern. The reaction of TEGa and As on the substrate surface at 450-550C in a H2 flow was used. The parameter of the growth process and the electrical and photoluminescent properties of epitaxial GaAs are discussed. Further TMGa TEGa and arsenic show strong absorption in far ultraviolet. The epitaxial growth of GaAs films can be achieved at low substrate temperatures by irradiating the gaseous reactant with a UV laser. Epitaxial GaAs films have been grown at 425C or higher by using ArF laser enhanced reaction of TEG and As. The electrical and photoluminescent properties of these films have also beencharacterized. Epitaxial GaAs films grown by the laser enhanced process have been found to contain considerably higher carbon concentration than films grown by the thermal process. This is due presumably to the photodissociation of carbon-hydrogen bonds in TEGa.

  1. Photo-metalorganic molecular-beam epitaxy: A new epitaxial growth technique

    SciTech Connect

    Tokumitsu, E.; Yamada, T.; Konagai, M.; Takahashi, K.

    1989-05-01

    Metalorganic molecular-beam epitaxy (MOMBE) combines many important advantages of molecular-beam epitaxy and metalorganic chemical vapor deposition. One of the most important features of MOMBE is that photochemical reaction can be used and we can call this new technique ''photo-MOMBE.'' Triisobutylaluminum (TIBA) has been used in photo-MOMBE instead of triethylaluminum (TEA) as a new aluminum source in order to enhance the photodecomposition. The optical absorption coefficient of TIBA for 193 nm was found to be three times greater than that of TEA. Selective deposition of Al, AlAs, and GaAlAs was carried out by using an ArF excimer laser. The Al mole fraction of GaAlAs ternary alloy grown with the excimer laser irradiation was greater than that of the film grown without the laser irradiation.

  2. Dopant profile control of epitaxial emitter for silicon solar cells by low temperature epitaxy

    NASA Astrophysics Data System (ADS)

    Lai, Donny; Tan, Yew Heng; Gunawan, Oki; He, Lining; Seng Tan, Chuan

    2011-07-01

    We report an alternative approach to grow phosphorus-doped epitaxial silicon emitter by rapid thermal chemical vapor deposition at low temperature (T ≥ 700 °C). A power conversion efficiency (PCE) of (6.6 ± 0.3)% and a pseudo PCE of (10.2 ± 0.2)% has been achieved for the solar cell with epi-emitter grown at 700 °C, in the absence of surface texturization, antireflective coating, and back surface field enhancement, without considering front contact shading. Secondary ion mass spectroscopy revealed that lower temperature silicon epitaxy yields a more abrupt p-n junction, suggesting potential applications for radial p-n junction wire array solar cells.

  3. Point defect balance in epitaxial GaSb

    SciTech Connect

    Segercrantz, N. Slotte, J.; Makkonen, I.; Kujala, J.; Tuomisto, F.; Song, Y.; Wang, S.

    2014-08-25

    Positron annihilation spectroscopy in both conventional and coincidence Doppler broadening mode is used for studying the effect of growth conditions on the point defect balance in GaSb:Bi epitaxial layers grown by molecular beam epitaxy. Positron annihilation characteristics in GaSb are also calculated using density functional theory and compared to experimental results. We conclude that while the main positron trapping defect in bulk samples is the Ga antisite, the Ga vacancy is the most prominent trap in the samples grown by molecular beam epitaxy. The results suggest that the p–type conductivity is caused by different defects in GaSb grown with different methods.

  4. Epitaxial EuO thin films on GaAs

    SciTech Connect

    Swartz, A. G.; Ciraldo, J.; Wong, J. J. I.; Li Yan; Han Wei; Lin Tao; Shi, J.; Kawakami, R. K.; Mack, S.; Awschalom, D. D.

    2010-09-13

    We demonstrate the epitaxial growth of EuO on GaAs by reactive molecular beam epitaxy. Thin films are grown in an adsorption-controlled regime with the aid of an MgO diffusion barrier. Despite the large lattice mismatch, it is shown that EuO grows well on MgO(001) with excellent magnetic properties. Epitaxy on GaAs is cube-on-cube and longitudinal magneto-optic Kerr effect measurements demonstrate a large Kerr rotation of 0.57 deg., a significant remanent magnetization, and a Curie temperature of 69 K.

  5. A proposal for epitaxial thin film growth in outer space

    NASA Technical Reports Server (NTRS)

    Ignatiev, Alex; Chu, C. W.

    1988-01-01

    A new concept for materials processing in space exploits the ultravacuum component of space for thin film epitaxial growth. The unique low earth orbit space environment is expected to yield 10 to the -14th torr or better pressures, semiinfinite pumping speeds, and large ultravacuum volume without walls. These space ultravacuum properties promise major improvement in the quality, unique nature, and the throughput of epitaxially grown materials. Advanced thin film materials to be epitaxially grown in space include semiconductors, magnetic materials, and thin film high temperature superconductors.

  6. Multifunctional epitaxial systems on silicon substrates

    NASA Astrophysics Data System (ADS)

    Singamaneni, Srinivasa Rao; Prater, John Thomas; Narayan, Jagdish

    2016-09-01

    Multifunctional heterostructures can exhibit a wide range of functional properties, including colossal magneto-resistance, magnetocaloric, and multiferroic behavior, and can display interesting physical phenomena including spin and charge ordering and strong spin-orbit coupling. However, putting this functionality to work remains a challenge. To date, most of the work reported in the literature has dealt with heterostructures deposited onto closely lattice matched insulating substrates such as DyScO3, SrTiO3 (STO), or STO buffered Si(100) using concepts of lattice matching epitaxy (LME). However, strain in heterostructures grown by LME is typically not fully relaxed and the layers contain detrimental defects such as threading dislocations that can significantly degrade the physical properties of the films and adversely affect the device characteristics. In addition, most of the substrates are incompatible with existing CMOS-based technology, where Si (100) substrates dominate. This review discusses recent advances in the integration of multifunctional oxide and non-oxide materials onto silicon substrates. An alternative thin film growth approach, called "domain matching epitaxy," is presented which identifies approaches for minimizing lattice strain and unwanted defects in large misfit systems (7%-25% and higher). This approach broadly allows for the integration of multifunctional materials onto silicon substrates, such that sensing, computation, and response functions can be combined to produce next generation "smart" devices. In general, pulsed laser deposition has been used to epitaxially grow these materials, although the concepts developed here can be extended to other deposition techniques, as well. It will be shown that TiN and yttria-stabilized zirconia template layers provide promising platforms for the integration of new functionality into silicon-based computer chips. This review paper reports on a number of thin-film heterostructure systems that span a

  7. Uniaxial strain-induced magnetic order transition from E-type to A-type in orthorhombic YMnO{sub 3} from first-principles

    SciTech Connect

    Lin, S. X.; Fang, X. G.; Zhang, A. H.; Lu, X. B.; Gao, J. W.; Gao, X. S.; Zeng, M.; Liu, J.-M.

    2014-10-28

    The spin ordering magnetic structures of orthorhombic YMnO{sub 3} subjected to uniaxial strain have been investigated using first-principles calculations based on density functional theory. On applying compressive uniaxial strain of −0.8% along the b orientation, the spin ordering magnetic structure is predicted to change from E-type to A-type antiferromagnetic orderings. The structure analysis also reveals that the uniaxial strain has a dramatic influence on the Mn-O bond lengths and Mn-O-Mn bond angles, allowing the gradual suppression of the alternation of the long and short Mn-O-Mn bonds in the ab plane. These changes present very interesting possibilities for engineering the spin ordering along with ferroelectric property in orthorhombic YMnO{sub 3}.

  8. Epitaxial integration of nanowires in microsystems by local micrometer-scale vapor-phase epitaxy.

    PubMed

    Mølhave, Kristian; Wacaser, Brent A; Petersen, Dirch Hjorth; Wagner, Jakob B; Samuelson, Lars; Bøggild, Peter

    2008-10-01

    Free-standing epitaxially grown nanowires provide a controlled growth system and an optimal interface to the underlying substrate for advanced optical, electrical, and mechanical nanowire device connections. Nanowires can be grown by vapor-phase epitaxy (VPE) methods such as chemical vapor deposition (CVD) or metal organic VPE (MOVPE). However, VPE of semiconducting nanowires is not compatible with several microfabrication processes due to the high synthesis temperatures and issues such as cross-contamination interfering with the intended microsystem or the VPE process. By selectively heating a small microfabricated heater, growth of nanowires can be achieved locally without heating the entire microsystem, thereby reducing the compatibility problems. The first demonstration of epitaxial growth of silicon nanowires by this method is presented and shows that the microsystem can be used for rapid optimization of VPE conditions. The important issue of the cross-contamination of other parts of the microsystem caused by the local growth of nanowires is also investigated by growth of GaN near previously grown silicon nanowires. The design of the cantilever heaters makes it possible to study the grown nanowires with a transmission electron microscope without sample preparation.

  9. Implementing Room-Temperature Multiferroism by Exploiting Hexagonal-Orthorhombic Morphotropic Phase Coexistence in LuFeO3 Thin Films.

    PubMed

    Song, Seungwoo; Han, Hyeon; Jang, Hyun Myung; Kim, Young Tae; Lee, Nam-Suk; Park, Chan Gyung; Kim, Jeong Rae; Noh, Tae Won; Scott, James F

    2016-09-01

    Room-temperature multiferroism in LuFeO3 (LFO) films is demonstrated by exploiting the orthorhombic-hexagonal (o-h) morphotrophic phase coexistence. The LFO film further reveals a magnetoelectric coupling effect that is not shown in single-phase (h- or o-) LFO. The observed multiferroism is attributed to the combination of sufficient polarization from h-LFO and net magnetization from o-LFO.

  10. Orthorhombic fault fracture patterns and non-plane strain in a synthetic transfer zone during rifting: Lennard shelf, Canning basin, Western Australia

    NASA Astrophysics Data System (ADS)

    Miller, John McL.; Nelson, E. P.; Hitzman, M.; Muccilli, P.; Hall, W. D. M.

    2007-06-01

    A complex series of faults occur within transfer zones normal to the WNW-trending rifted northern margin of the Canning basin (Western Australia). These zones controlled basinal fluid flow and the formation of some carbonate-hosted Mississippi Valley-type Zn-Pb deposits along the basin margin during Devonian to Carboniferous rifting. The study area has a regional fault geometry similar to a synthetic overlapping transfer zone. Surface and underground mapping in this transfer zone, combined with 3D modelling, indicate the faults and related extension fractures have an orthorhombic geometry. The orthorhombic fault-fracture mesh developed in response to three-dimensional non-plane strain in which the intermediate finite extension magnitude was non-zero. Pre-mineralisation marine calcite fill in the fault-fracture mesh indicates that it formed early in the deformation history. Later deformation that overprints the Zn-Pb mineralisation and fault-fracture mesh, was associated with a different maximum extension direction and this modified and reactivated the faults with both dip-slip and oblique-slip movement and tilting of earlier structures. The orthorhombic geometry is not observed at a regional scale (>10 × 10 km), indicating probable scale-dependant behaviour. This study indicates that this transfer zone developed either by (1) strain partitioning with synchronous strike-slip structures and adjacent zones of non-plane extension, or (2) by a component of non-plane extension sub-parallel to the basin margin followed by subsequent transtensional overprint of the system (preferred model). Synthetic overlapping transfer zones are inferred to be key regions where orthorhombic fault geometries may develop.

  11. Impurity scattering effects on the superconducting properties and the tetragonal-to-orthorhombic phase transition in FeSe

    NASA Astrophysics Data System (ADS)

    Abdel-Hafiez, M.; Pu, Y. J.; Brisbois, J.; Peng, R.; Feng, D. L.; Chareev, D. A.; Silhanek, A. V.; Krellner, C.; Vasiliev, A. N.; Chen, Xiao-Jia

    2016-06-01

    A comprehensive study of the doping dependence of the phase diagram of FeSe-based superconductors is still required due to the lack of a clean and systematic means of doping control. Here, we report on the magneto-optical imaging, thermodynamic and transport properties, as well as in situ angle-resolved photoemission spectroscopy (ARPES) studies of impurity scattering in stoichiometric FeSe single crystals. Co doping at the Fe site is found to decrease the superconducting transition temperature (Tc). The upper critical field and specific heat all indicate a possible multiband superconductivity with strong coupling in the Co-doped system. A remarkable feature in FeSe is that its temperature dependent resistivity exhibits a wide hump at high temperatures, a signature of a crossover from a semiconductinglike behavior to metallic behavior. A structural tetragonal-to-orthorhombic phase transition (Ts) (a consequence of the electronic nematicity) is suppressed by either physical or chemical pressures. Due to the reconstruction of the Fermi surface at Ts, specific heat anomalies at Ts present Δ Cp/Ts≈γn , being γn the Sommerfield coefficient at low temperature. This reflect an additional electronic instability in the FeSe1 -xSx system. ARPES data between 180 and 282 K indicates the existence of a chemical potential shift with increasing thermal excitations, resulting in a change of the Fermi-surface topology and exhibiting a semimetal behavior. We found that the temperature-induced Lifshitz transition is much higher than the temperature for the nematic order.

  12. Application of orthorhombic standardization in magnetic susceptibility studies of localized spin models with S=1, 3/2, 2, 5/2

    NASA Astrophysics Data System (ADS)

    Pełka, Robert; Rudowicz, Czesław

    2016-09-01

    The standardization idea is nowadays tacitly accepted in EMR area, however, its usefulness in magnetism studies has not been fully recognized as yet. This idea arises due to intrinsic features of orthorhombic Hamiltonians of any physical nature, including the crystal (ligand) field (CF/LF) Hamiltonians or the zero-field splitting (ZFS) ones. Standardization limits the ratio of the orthorhombic parameter to the axial one to a fixed range between 0 and a specific value that depends on the notation used. For the ZFS parameters expressed in the conventional spin Hamiltonian (SH) notation the ratio λ=E/D can always be limited to the range (0, ±1/3) by appropriate choice of coordinate system. Implications of standardization of orthorhombic spin Hamiltonians for interpretation of experimental magnetic susceptibility data are considered. Using a numerical example, we show the existence of alternative solutions for ZFS parameters potentially obtainable from fitting experimental magnetic data and discuss their importance. For the first time algebraic applications of the standardization to the expressions for magnetic susceptibility tensor derived earlier for localized spin models with S=1, 3/2, 2, 5/2 and with rhombic anisotropy are explored. The numerical and algebraic results allow us to formulate an 'invariance principle'. These considerations facilitate interpretation of experimental magnetic data and provide an additional check of correctness of analytical magnetic susceptibility expressions.

  13. Infrared Rugates by Molecular Beam Epitaxy

    NASA Technical Reports Server (NTRS)

    Rona, M.

    1993-01-01

    Rugates are optical structures that have a sinusoidal index of refraction (harmonic gradient-index field). As their discrete high/ low index filter counterparts, they can be used as narrow rejection band filters. However, since rugates do not have abrupt interfaces, they tend to have a smaller absorption, hence deliver a higher in band reflectivity. The absence of sharp interfaces makes rugates even more desirable for high-energy narrow band reflectors. In this application, the lack of a sharp interface at the maximum internal standing wave electric field results in higher breakdown strengths. Our method involves fabricating rugates, with molecular beam epitaxy, on GaAs wafers as an Al(x)Ga(1-x)As single-crystal film.

  14. Epitaxial oxide bilayer on Pt (001) nanofacets

    NASA Astrophysics Data System (ADS)

    Hennessy, Daniel; Komanicky, Vladimir; Iddir, Hakim; Pierce, Michael S.; Menzel, Andreas; Chang, Kee-Chul; Barbour, Andi; Zapol, Peter; You, Hoydoo

    2012-01-01

    We observed an epitaxial, air-stable, partially registered (2 × 1) oxide bilayer on Pt (001) nanofacets [V. Komanicky, A. Menzel, K.-C. Chang, and H. You, J. Phys. Chem. 109, 23543 (2005)]. The bilayer is made of two half Pt layers; the top layer has four oxygen bonds and the second layer two. The positions and oxidation states of the Pt atoms are determined by analyzing crystal truncation rods and resonance scattering data. The positions of oxygen atoms are determined by density functional theory (DFT) calculations. Partial registry on the nanofacets and the absence of such registry on the extended Pt (001) surface prepared similarly are explained in DFT calculations by strain relief that can be accommodated only by nanoscale facets.

  15. Scattering and interference in epitaxial graphene.

    PubMed

    Rutter, G M; Crain, J N; Guisinger, N P; Li, T; First, P N; Stroscio, J A

    2007-07-13

    A single sheet of carbon, graphene, exhibits unexpected electronic properties that arise from quantum state symmetries, which restrict the scattering of its charge carriers. Understanding the role of defects in the transport properties of graphene is central to realizing future electronics based on carbon. Scanning tunneling spectroscopy was used to measure quasiparticle interference patterns in epitaxial graphene grown on SiC(0001). Energy-resolved maps of the local density of states reveal modulations on two different length scales, reflecting both intravalley and intervalley scattering. Although such scattering in graphene can be suppressed because of the symmetries of the Dirac quasiparticles, we show that, when its source is atomic-scale lattice defects, wave functions of different symmetries can mix.

  16. Shaping metal nanocrystals through epitaxial seeded growth

    SciTech Connect

    Habas, Susan E.; Lee, Hyunjoo; Radmilovic, Velimir; Somorjai,Gabor A.; Yang, Peidong

    2008-02-17

    Morphological control of nanocrystals has becomeincreasingly important, as many of their physical and chemical propertiesare highly shape-dependent. Nanocrystal shape control for both single andmultiple material systems, however, remains fairly empirical andchallenging. New methods need to be explored for the rational syntheticdesign of heterostructures with controlled morphology. Overgrowth of adifferent material on well-faceted seeds, for example, allows for the useof the defined seed morphology to control nucleation and growth of thesecondary structure. Here, we have used highly faceted cubic Pt seeds todirect the epitaxial overgrowth of a secondary metal. We demonstrate thisconcept with lattice matched Pd to produce conformal shape-controlledcore-shell particles, and then extend it to lattice mismatched Au to giveanisotropic growth. Seeding with faceted nanocrystals may havesignificant potential towards the development of shape-controlledheterostructures with defined interfaces.

  17. Epitaxial growth of Si deposited on (100) Si

    NASA Astrophysics Data System (ADS)

    Hung, L. S.; Lau, S. S.; von Allmen, M.; Mayer, J. W.; Ullrich, B. M.; Baker, J. E.; Williams, P.; Tseng, W. F.

    1980-11-01

    Epitaxial growth of deposited amorphous Si on chemically cleaned (100) Si has been found and layer-by-layer growth occurred at rates comparable to those in self-ion-implanted-amorphous Si. There is no evidence for appreciable oxygen penetration into the deposited layer during storage in air. The critical factors in achieving epitaxial growth are fast (˜50 Å/sec) deposition of Si onto a surface cleaned with a HF dip as a last rinse before loading into the vacuum system. Channeling and transmission electron microscopy measurements indicated that the epitaxial layers are essentially defect free. Secondary-ion mass spectroscopic analysis showed about 1014 oxygen/cm2 at the amorphous/crystal interface. With either higher interfacial oxygen coverage or slow (˜2 Å/sec) deposition, epitaxial growth rates are significantly slower.

  18. Epitaxy of GaN Nanowires on Graphene.

    PubMed

    Kumaresan, Vishnuvarthan; Largeau, Ludovic; Madouri, Ali; Glas, Frank; Zhang, Hezhi; Oehler, Fabrice; Cavanna, Antonella; Babichev, Andrey; Travers, Laurent; Gogneau, Noelle; Tchernycheva, Maria; Harmand, Jean-Christophe

    2016-08-10

    Epitaxial growth of GaN nanowires on graphene is demonstrated using molecular beam epitaxy without any catalyst or intermediate layer. Growth is highly selective with respect to silica on which the graphene flakes, grown by chemical vapor deposition, are transferred. The nanowires grow vertically along their c-axis and we observe a unique epitaxial relationship with the ⟨21̅1̅0⟩ directions of the wurtzite GaN lattice parallel to the directions of the carbon zigzag chains. Remarkably, the nanowire density and height decrease with increasing number of graphene layers underneath. We attribute this effect to strain and we propose a model for the nanowire density variation. The GaN nanowires are defect-free and they present good optical properties. This demonstrates that graphene layers transferred on amorphous carrier substrates is a promising alternative to bulk crystalline substrates for the epitaxial growth of high quality GaN nanostructures.

  19. Epitaxy of GaN Nanowires on Graphene.

    PubMed

    Kumaresan, Vishnuvarthan; Largeau, Ludovic; Madouri, Ali; Glas, Frank; Zhang, Hezhi; Oehler, Fabrice; Cavanna, Antonella; Babichev, Andrey; Travers, Laurent; Gogneau, Noelle; Tchernycheva, Maria; Harmand, Jean-Christophe

    2016-08-10

    Epitaxial growth of GaN nanowires on graphene is demonstrated using molecular beam epitaxy without any catalyst or intermediate layer. Growth is highly selective with respect to silica on which the graphene flakes, grown by chemical vapor deposition, are transferred. The nanowires grow vertically along their c-axis and we observe a unique epitaxial relationship with the ⟨21̅1̅0⟩ directions of the wurtzite GaN lattice parallel to the directions of the carbon zigzag chains. Remarkably, the nanowire density and height decrease with increasing number of graphene layers underneath. We attribute this effect to strain and we propose a model for the nanowire density variation. The GaN nanowires are defect-free and they present good optical properties. This demonstrates that graphene layers transferred on amorphous carrier substrates is a promising alternative to bulk crystalline substrates for the epitaxial growth of high quality GaN nanostructures. PMID:27414518

  20. Formation Of Ohmic Gold Contacts On Epitaxial GaAs

    NASA Technical Reports Server (NTRS)

    Hecht, Michael H.; Bell, L. Doug; Kaiser, William J.

    1991-01-01

    New low-temperature procedure used to deposit ohmic gold contacts on gallium arsenide epitaxial films, forming ohmic electrical contacts. Keeping wafer in vacuum until metallization prevents formation of rectifying contacts.

  1. Epitaxial CoSi2 on MOS devices

    DOEpatents

    Lim, Chong Wee; Shin, Chan Soo; Petrov, Ivan Georgiev; Greene, Joseph E.

    2005-01-25

    An Si.sub.x N.sub.y or SiO.sub.x N.sub.y liner is formed on a MOS device. Cobalt is then deposited and reacts to form an epitaxial CoSi.sub.2 layer underneath the liner. The CoSi.sub.2 layer may be formed through a solid phase epitaxy or reactive deposition epitaxy salicide process. In addition to high quality epitaxial CoSi.sub.2 layers, the liner formed during the invention can protect device portions during etching processes used to form device contacts. The liner can act as an etch stop layer to prevent excessive removal of the shallow trench isolation, and protect against excessive loss of the CoSi.sub.2 layer.

  2. Improved process for epitaxial deposition of silicon on prediffused substrates

    NASA Technical Reports Server (NTRS)

    Clarke, M. G.; Halsor, J. L.; Word, J. C.

    1968-01-01

    Process for fabricating integrated circuits uniformly deposits silicon epitaxially on prediffused substrates without affecting the sublayer diffusion pattern. Two silicon deposits from different sources, and deposited at different temperatures, protect the sublayer pattern from the silicon tetrachloride reaction.

  3. Growth of epitaxial thin films by pulsed laser ablation

    SciTech Connect

    Lowndes, D.H.

    1992-01-01

    High-quality, high-temperature superconductor (HTSc) films can be grown by the pulsed laser ablation (PLA) process. This article provides a detailed introduction to the advantages and curent limitations of PLA for epitaxial film growth. Emphasis is placed on experimental methods and on exploitation of PLA to control epitaxial growth at either the unit cell or the atomic-layer level. Examples are taken from recent HTSc film growth. 33 figs, 127 refs. (DLC)

  4. Growth of epitaxial thin films by pulsed laser ablation

    SciTech Connect

    Lowndes, D.H.

    1992-10-01

    High-quality, high-temperature superconductor (HTSc) films can be grown by the pulsed laser ablation (PLA) process. This article provides a detailed introduction to the advantages and curent limitations of PLA for epitaxial film growth. Emphasis is placed on experimental methods and on exploitation of PLA to control epitaxial growth at either the unit cell or the atomic-layer level. Examples are taken from recent HTSc film growth. 33 figs, 127 refs. (DLC)

  5. Heteroepitaxial oxide structures grown by pulsed organometallic beam epitaxy (POMBE)

    NASA Astrophysics Data System (ADS)

    Kaatz, F. H.; Dai, J.-Y.; Markworth, P. R.; Buchholz, D. B.; Chang, R. P. H.

    2003-01-01

    We describe the design, construction, and use of pulsed organometallic beam epitaxy (POMBE), a plasma-enhanced CVD technique to grow oxide heterostructures. Solid-state precursors are sampled in the gas line via quartz crystal monitors and injected into the O 2 microwave plasma with pulse time durations of a few seconds. The precursors are injected through pneumatic valves in a heated valve box. The valves and microwave power are under computer control. The microwave plasma is ramped between a forward power of 600 and 1500 W to improve film epitaxy. We use POMBE to grow epitaxial BaYZrO 3/MgO, Y-ZrO 2/LAO, and YBa 2Cu 3O 7/Y-ZrO 2/LAO structures. The processing parameters leading to the heteroepitaxy are described. The best epitaxy results in X-ray FWHM of 0.12°, 0.38°, and 0.87° for BaYZrO 3, Y-ZrO 2, and YBa 2Cu 3O 7, respectively. We show the advantages of the POMBE technique over that of plasma-enhanced CVD. Selected TEM results of the heteroepitaxial oxide structures are shown, and the role that temperature plays in the oxide epitaxy. The epitaxy of BaYZrO 3 is the first described in the literature, and that of YSZ is among the best reported.

  6. The Controller Synthesis of Metastable Oxides Utilizing Epitaxy and Epitaxial Stabilization

    SciTech Connect

    Schlom, Darrell

    2003-12-02

    Molecular beam epitaxy (MBE) has achieved unparalleled control in the integration of semiconductors at the nanometer. These advances were made through the use of epitaxy, epitaxial stabilization, and a combination of composition-control techniques including adsorption-controlled growth and RHEED-based composition control that we have developed, understood, and utilized for the growth of oxides. Also key was extensive characterization (utilizing RHEED, four-circle x-ray diffraction, AFM, TEM, and electrical characterization techniques) in order to study growth modes, optimize growth conditions, and probe the structural, dielectric, and ferroelectric properties of the materials grown. The materials that we have successfully engineered include titanates (PbTiO3, Bi4Ti3O12), tantalates (SrBi2Ta2O9), and niobates (SrBi2Nb2O9); layered combinations of these perovskite-related materials (Bi4Ti3O12-SrTiO3 and Bi4Ti3O12-PbTiO3 Aurivillius phases and metastable PbTiO3/SrTiO3 and BaTiO3/SrTiO3 superlattices), and new metastable phases (Srn+1TinO3n+1 Ruddlesden-Popper phases). The films were grown by reactive MBE and pulsed laser deposition (PLD). Many of these materials are either new or have been synthesized with the highest perfection ever reported. The controlled synthesis of such layered oxide heterostructures offers great potential for tailoring the superconducting, ferroelectric, and dielectric properties of these materials. These properties are important for energy technologies.

  7. Quality of epitaxial InAs nanowires controlled by catalyst size in molecular beam epitaxy

    SciTech Connect

    Zhang, Zhi; Xu, Hong-Yi; Guo, Ya-Nan; Liao, Zhi-Ming; Lu, Zhen-Yu; Chen, Ping-Ping; Shi, Sui-Xing; Lu, Wei; Zou, Jin

    2013-08-12

    In this study, the structural quality of Au-catalyzed InAs nanowires grown by molecular beam epitaxy is investigated. Through detailed electron microscopy characterizations and analysis of binary Au-In phase diagram, it is found that defect-free InAs nanowires can be induced by smaller catalysts with a high In concentration, while comparatively larger catalysts containing less In induce defected InAs nanowires. This study indicates that the structural quality of InAs nanowires can be controlled by the size of Au catalysts when other growth conditions remain as constants.

  8. Quality of epitaxial InAs nanowires controlled by catalyst size in molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Zhang, Zhi; Lu, Zhen-Yu; Chen, Ping-Ping; Xu, Hong-Yi; Guo, Ya-Nan; Liao, Zhi-Ming; Shi, Sui-Xing; Lu, Wei; Zou, Jin

    2013-08-01

    In this study, the structural quality of Au-catalyzed InAs nanowires grown by molecular beam epitaxy is investigated. Through detailed electron microscopy characterizations and analysis of binary Au-In phase diagram, it is found that defect-free InAs nanowires can be induced by smaller catalysts with a high In concentration, while comparatively larger catalysts containing less In induce defected InAs nanowires. This study indicates that the structural quality of InAs nanowires can be controlled by the size of Au catalysts when other growth conditions remain as constants.

  9. Epitaxial Growth of Two-Dimensional Stanene

    NASA Astrophysics Data System (ADS)

    Jia, Jinfeng

    Ultrathin semiconductors present various novel electronic properties. The first experimental realized two-dimensional (2D) material is graphene. Searching 2D materials with heavy elements bring the attention to Si, Ge and Sn. 2D buckled Si-based silicene was realized by molecular beam epitaxy (MBE) growth. Ge-based germanene was realized by mechanical exfoliation. Sn-based stanene has its unique properties. Stanene and its derivatives can be 2D topological insulators (TI) with a very large band gap as proposed by first-principles calculations, or can support enhanced thermoelectric performance, topological superconductivity and the near-room-temperature quantum anomalous Hall (QAH) effect. For the first time, in this work, we report a successful fabrication of 2D stanene by MBE. The atomic and electronic structures were determined by scanning tunneling microscopy (STM) and angle-resolved photoemission spectroscopy (ARPES) in combination with first-principles calculations. This work will stimulate the experimental study and exploring the future application of stanene. In cooperation with Fengfeng Zhu, Wei-jiong Chen, Yong Xu, Chun-lei Gao, Dan-dan Guan, Canhua Liu, Dong Qian, Shou-Cheng Zhang.

  10. Asymmetric shape transitions of epitaxial quantum dots

    NASA Astrophysics Data System (ADS)

    Wei, Chaozhen; Spencer, Brian J.

    2016-06-01

    We construct a two-dimensional continuum model to describe the energetics of shape transitions in fully faceted epitaxial quantum dots (strained islands) via minimization of elastic energy and surface energy at fixed volume. The elastic energy of the island is based on a third-order approximation, enabling us to consider shape transitions between pyramids, domes, multifaceted domes and asymmetric intermediate states. The energetics of the shape transitions are determined by numerically calculating the facet lengths that minimize the energy of a given island type of prescribed island volume. By comparing the energy of different island types with the same volume and analysing the energy surface as a function of the island shape parameters, we determine the bifurcation diagram of equilibrium solutions and their stability, as well as the lowest barrier transition pathway for the island shape as a function of increasing volume. The main result is that the shape transition from pyramid to dome to multifaceted dome occurs through sequential nucleation of facets and involves asymmetric metastable transition shapes. We also explicitly determine the effect of corner energy (facet edge energy) on shape transitions and interpret the results in terms of the relative stability of asymmetric island shapes as observed in experiment.

  11. Epitaxial Overgrowth of Platinum on Palladium Nanocrystals

    SciTech Connect

    Jiang, M.; Zhu, Y.; Lim, B.; Tao, J.; Camargo, P.H.C.; Ma, C.; Xia, Y.

    2010-11-01

    This paper describes a systematic study on the epitaxial overgrowth of Pt on well-defined Pdnanocrystals with different shapes (and exposed facets), including regular octahedrons, truncated octahedrons, and cubes. Two different reducing agents, i.e., citric acid and L-ascorbic acid, were evaluated and compared for the reduction of K{sub 2}PtCl{sub 4} in an aqueous solution in the presence of Pdnanocrystal seeds. When citric acid was used as a reducing agent, conformal overgrowth of octahedral Pt shells on regular and truncated octahedrons of Pd led to the formation of Pd-Pt core-shell octahedrons, while non-conformal overgrowth of Pt on cubic Pd seeds resulted in the formation of an incomplete octahedral Pt shell. On the contrary, localized overgrowth of Pt branches was observed when L-ascorbic acid was used as a reducing agent regardless of the facets expressed on the surface of Pdnanocrystal seeds. This work shows that both the binding affinity of a reducing agent to the Pt surface and the reduction kinetics for a Pt precursor play important roles in determining the mode of Pt overgrowth on Pdnanocrystal surface.

  12. Formation and ordering of epitaxial quantum dots

    NASA Astrophysics Data System (ADS)

    Atkinson, Paola; Schmidt, Oliver G.; Bremner, Stephen P.; Ritchie, David A.

    2008-10-01

    Single quantum dots (QDs) have great potential as building blocks for quantum information processing devices. However, one of the major difficulties in the fabrication of such devices is the placement of a single dot at a pre-determined position in the device structure, for example, in the centre of a photonic cavity. In this article we review some recent investigations in the site-controlled growth of InAs QDs on GaAs by molecular beam epitaxy. The method we use is ex-situ patterning of the GaAs substrate by electron beam lithography and conventional wet or dry etching techniques to form shallow pits in the surface which then determine the nucleation site of an InAs dot. This method is easily scalable and can be incorporated with marker structures to enable simple post-growth lithographic alignment of devices to each site-controlled dot. We demonstrate good site-control for arrays with up to 10 micron spacing between patterned sites, with no dots nucleating between the sites. We discuss the mechanism and the effect of pattern size, InAs deposition amount and growth conditions on this site-control method. Finally we discuss the photoluminescence from these dots and highlight the remaining challenges for this technique. To cite this article: P. Atkinson et al., C. R. Physique 9 (2008).

  13. Photoinduced topological phase transition in epitaxial graphene

    NASA Astrophysics Data System (ADS)

    Zhai, Xuechao; Jin, Guojun

    2014-06-01

    In epitaxial graphene irradiated by an off-resonance circularly polarized light, we demonstrate a phase transition taking place between the band insulator and Floquet topological insulator. Considering the competition between staggered sublattice potential and photon dressing, we derive the dynamical energy gap and phase diagram in the tight-binding approximation. It is found that a threshold value of light intensity is necessary to realize a Floquet topological insulator. At the phase boundary, for each set of parameters, there is a special state with only one valley that is Dirac cone gapless, but the other remains gapped; in the band insulating phase, only one valley provides low-energy electrons, and it could be switched to the other by reversing the polarization direction of light. From these results, two electronic devices are designed: one is an optical-sensing np junction, where the photodriven unusual intervalley tunneling exhibits a stronger detectable signal than the intravalley tunneling, and the other is a topological field-effect transistor, where polarized light is used to turn on or turn off a nonequilibrium current.

  14. Two orthorhombic crystal structures of a galactose-specific lectin from Artocarpus hirsuta in complex with methyl-alpha-D-galactose.

    PubMed

    Rao, K N; Suresh, C G; Katre, U V; Gaikwad, S M; Khan, M I

    2004-08-01

    Based on their carbohydrate specificity, the jacalin family of lectins can be divided into two groups: galactose-specific and mannose-specific. The former are cytoplasmic proteins, whereas the latter are localized in the storage vacuoles of cells. It has been proposed that the post-translational modification in some of the lectins that splits their polypeptide chains into two may be crucial for galactose specificity. The mannose-specific members of the family are single-chain proteins that lack the above modification. Although the galactose-specific and the mannose-specific jacalin-type lectins differ in their sequences, they share a common fold: the beta-prism I fold, which is characteristic of Moraceae plant lectins. Here, two crystal structures of a jacalin-related lectin from Artocarpus hirsuta, which is specific for galactose, in complex with methyl-alpha-D-galactose are reported. The lectin crystallized in two orthorhombic forms and one hexagonal form under similar conditions. The crystals had an unusually high solvent content. The structure was solved using the molecular-replacement method using the jacalin structure as a search model. The two orthorhombic forms were refined using data to 2.5 and 3.0 A resolution, respectively. The structures of the A. hirsuta lectin and jacalin are identical. In orthorhombic form I the crystal packing provides three different micro-environments for sugar binding in the same crystal. The observed difference in the specificity for oligosaccharides between the A. hirsuta lectin and jacalin could only be explained based on differences in the molecular associations in the packing and variation of the C-terminal length of the beta-chain. The observed insecticidal activity of A. hirsuta lectin may arise from its similar fold to domain II of the unrelated delta-endotoxin from Bacillus thuringiensis.

  15. Lattice dynamics and spin-phonon coupling in orthorhombic Eu1-xHoxMnO3 (x ≤0.3 ) studied by Raman spectroscopy

    NASA Astrophysics Data System (ADS)

    Elsässer, S.; Geurts, J.; Mukhin, A. A.; Balbashov, A. M.

    2016-02-01

    Eu1-xHoxMnO3 with x <0.5 has an orthorhombic perovskite structure, where the partial substitution of europium by holmium increases the orthorhombic distortion and changes the low-temperature magnetic structure from canted antiferromagnetic to the multiferroic ground state with cycloidal spin arrangement for x >0.2 . We employ polarized, temperature-dependent Raman spectroscopy to study the lattice dynamics and spin-phonon coupling (SPC) effects for the two representative compositions x =0.1 and x =0.3 . We observe an enhancement of phonon frequencies by Ho3+ substitution and we use the Ag(4 ) mode as a measure to evaluate the orthorhombic distortion angle θ . SPC manifests itself as mode-specific softening for T <100 K, induced by the magnetic ordering of Mn3+ spins. Furthermore, we present evidence that the hitherto elusive Raman peak at ≈650 cm-1 is a phonon of B3 g symmetry and ascribe it to the B3 g(1 ) out-of-phase MnO6-breathing mode. We show that this mode has the strongest SPC effect of all observed phonon modes, a fact which we explain by the participation of the apical O(1) ions, modulating the Mn-O(1)-Mn bond whose SPC contribution was hitherto not accessible. Finally, we present a quantitative evaluation of the SPC contribution by the antiferromagnetic plane-to-plane coupling through the Mn-O(1)-Mn bonds and discriminate if from the in-plane ferromagnetic Mn-O(2)-Mn part.

  16. Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene.

    PubMed

    Kim, Jeehwan; Bayram, Can; Park, Hongsik; Cheng, Cheng-Wei; Dimitrakopoulos, Christos; Ott, John A; Reuter, Kathleen B; Bedell, Stephen W; Sadana, Devendra K

    2014-09-11

    There are numerous studies on the growth of planar films on sp(2)-bonded two-dimensional (2D) layered materials. However, it has been challenging to grow single-crystalline films on 2D materials due to the extremely low surface energy. Recently, buffer-assisted growth of crystalline films on 2D layered materials has been introduced, but the crystalline quality is not comparable with the films grown on sp(3)-bonded three-dimensional materials. Here we demonstrate direct van der Waals epitaxy of high-quality single-crystalline GaN films on epitaxial graphene with low defectivity and surface roughness comparable with that grown on conventional SiC or sapphire substrates. The GaN film is released and transferred onto arbitrary substrates. The post-released graphene/SiC substrate is reused for multiple growth and transfer cycles of GaN films. We demonstrate fully functional blue light-emitting diodes (LEDs) by growing LED stacks on reused graphene/SiC substrates followed by transfer onto plastic tapes.

  17. Growth of very large InN microcrystals by molecular beam epitaxy using epitaxial lateral overgrowth

    SciTech Connect

    Kamimura, J.; Kishino, K.; Kikuchi, A.

    2015-02-28

    Very thick InN (∼40 μm) was grown by molecular beam epitaxy using the epitaxial lateral overgrowth (ELO) technique. In some regions, the ELO of InN was observed as expected, indicating an important step toward fabricating quasi-bulk InN substrates. Interestingly, most parts of the sample consist of large flat-topped microcrystals and well-faceted microstructures. This is likely due to local growth condition variations during ELO, which is supported by an experiment where ELO of InN was performed on a substrate with various stripe mask patterns. TEM characterization of a flat top InN microcrystal revealed few stacking faults and only related threading dislocations. Defect-free small faceted microcrystals were also observed. The thick InN crystals show a narrow photoluminescence spectrum with a peak at 0.679 eV and linewidth of 16.8 meV at 4 K.

  18. Principle of direct van der Waals epitaxy of single-crystalline films on epitaxial graphene

    NASA Astrophysics Data System (ADS)

    Kim, Jeehwan; Bayram, Can; Park, Hongsik; Cheng, Cheng-Wei; Dimitrakopoulos, Christos; Ott, John A.; Reuter, Kathleen B.; Bedell, Stephen W.; Sadana, Devendra K.

    2014-09-01

    There are numerous studies on the growth of planar films on sp2-bonded two-dimensional (2D) layered materials. However, it has been challenging to grow single-crystalline films on 2D materials due to the extremely low surface energy. Recently, buffer-assisted growth of crystalline films on 2D layered materials has been introduced, but the crystalline quality is not comparable with the films grown on sp3-bonded three-dimensional materials. Here we demonstrate direct van der Waals epitaxy of high-quality single-crystalline GaN films on epitaxial graphene with low defectivity and surface roughness comparable with that grown on conventional SiC or sapphire substrates. The GaN film is released and transferred onto arbitrary substrates. The post-released graphene/SiC substrate is reused for multiple growth and transfer cycles of GaN films. We demonstrate fully functional blue light-emitting diodes (LEDs) by growing LED stacks on reused graphene/SiC substrates followed by transfer onto plastic tapes.

  19. Orthorhombic-tetragonal phase coexistence and enhanced piezo-response at room temperature in Zr, Sn, and Hf modified BaTiO{sub 3}

    SciTech Connect

    Kalyani, Ajay Kumar; Brajesh, Kumar; Ranjan, Rajeev; Senyshyn, Anatoliy

    2014-06-23

    The effect of Zr, Hf, and Sn in BaTiO{sub 3} has been investigated at close composition intervals in the dilute concentration limit. Detailed structural analysis by x-ray and neutron powder diffraction revealed that merely 2 mol. % of Zr, Sn, and Hf stabilizes a coexistence of orthorhombic (Amm2) and tetragonal (P4mm) phases at room temperature. As a consequence, all the three systems show substantial enhancement in the longitudinal piezoelectric coefficient (d{sub 33}), with Sn modification exhibiting the highest value ∼425 pC/N.

  20. Applying CLIPS to control of molecular beam epitaxy processing

    NASA Technical Reports Server (NTRS)

    Rabeau, Arthur A.; Bensaoula, Abdelhak; Jamison, Keith D.; Horton, Charles; Ignatiev, Alex; Glover, John R.

    1990-01-01

    A key element of U.S. industrial competitiveness in the 1990's will be the exploitation of advanced technologies which involve low-volume, high-profit manufacturing. The demands of such manufacture limit participation to a few major entities in the U.S. and elsewhere, and offset the lower manufacturing costs of other countries which have, for example, captured much of the consumer electronics market. One such technology is thin-film epitaxy, a technology which encompasses several techniques such as Molecular Beam Epitaxy (MBE), Chemical Beam Epitaxy (CBE), and Vapor-Phase Epitaxy (VPE). Molecular Beam Epitaxy (MBE) is a technology for creating a variety of electronic and electro-optical materials. Compared to standard microelectronic production techniques (including gaseous diffusion, ion implantation, and chemical vapor deposition), MBE is much more exact, though much slower. Although newer than the standard technologies, MBE is the technology of choice for fabrication of ultraprecise materials for cutting-edge microelectronic devices and for research into the properties of new materials.

  1. Epitaxial Growth of Zinc Oxide on Single Crystalline Gold Plates

    NASA Astrophysics Data System (ADS)

    Greenberg, Kathryn; Joo, John; Baram, Mor; Clarke, David; Hu, Evelyn

    2012-02-01

    Although metal-oxide interfaces are the critical components of many electronic and optical devices, it is rare to find epitaxial metal-oxide structures. We demonstrate for the first time, a method for the low temperature, epitaxial growth of zinc oxide (ZnO) on single crystalline gold plates. The gold plates, up to 100μm in width, are grown from a gold-surfactant complex. Even with the large lattice mismatch between (111) gold and (0001) ZnO, we are able to form epitaxial zinc oxide at 90^oC on top of the single crystal gold plates. This epitaxial growth is confirmed using transmission electron microscopy, electron diffraction, and electron backscatterer diffraction. Micro-photoluminescence is also performed to investigate the optical properties of the epitaxial zinc oxide. We remove the grown ZnO membranes from the gold plates using a stamping and etching process. These membranes can potentially be used to fabricate high quality microdisks and photonic crystals. The metal-oxide interfaces that we have fabricated may have the ability to be used in a number of technologically important applications, including as better electrical contacts and for improved light extraction from planar LED structures.

  2. Continuum model of surface roughening and epitaxial breakdown during low-temperature Ge(001) molecular beam epitaxy

    SciTech Connect

    Bratland, K. A.; Spila, T.; Cahill, D. G.; Greene, J. E.; Desjardins, P.

    2011-03-15

    Numerical simulations based on a discrete model describing step edge motion are used to compute the surface morphological evolution of Ge(001) layers deposited by low-temperature (T{sub s} = 45-230 deg. C) molecular beam epitaxy and to probe the relationship between surface roughening and the onset of epitaxial breakdown - the abrupt growth mode transition from epitaxial to amorphous - at temperature-dependent critical film thicknesses h{sub 1}(T{sub s}). Computed surface widths w and in-plane coherence lengths d as a function of layer thickness h exhibit good agreement with experimental values. Inspired by experimental results indicating that epitaxial breakdown is initiated at facetted interisland trenches as the surface roughness reaches a T{sub s}-independent overall aspect ratio, we show that simulated data for w/d = 0.03 correspond to thicknesses h{sub 1{proportional_to}} exp (-E{sub 1}/kT{sub s}) with E{sub 1} = 0.63 eV, a value equal to the Ge adatom diffusion activation energy on Ge(001). Simulated h{sub 1} values agree well with experimental data. Above a critical growth temperature of 170 deg. C, computed w/d values saturate at large film thicknesses, never reaching the critical aspect ratio w/d = 0.03. Thus, the model also predicts that epitaxial breakdown does not occur for T{sub s} > 170 deg. C as observed experimentally.

  3. Difference in the luminescence properties of orthorhombic and monoclinic forms of Y{sub 2}GeO{sub 5}:Ln (Ln = Tb{sup 3+} and Dy{sup 3+})

    SciTech Connect

    Tyagi, Adish; Shah, Alpa; Sudarsan, V. Vatsa, R.K.; Jain, V.K.

    2015-04-15

    Highlights: • Improved emission colour purity with orthorhombic form of Y{sub 2}GeO{sub 5}. • Non-stationary quenching exists in orthorhombic and monoclinic forms of Y{sub 2}GeO{sub 5}:Tb. • Ion pair formation and cross relaxation quenching operating for Y{sub 2}GeO{sub 5}:Dy samples. - Abstract: The luminescence properties of Tb{sup 3+} and Dy{sup 3+} doped orthorhombic and monoclinic forms of Y{sub 2}GeO{sub 5} are significantly different. Orthorhombic Y{sub 2}GeO{sub 5} doped with Tb{sup 3+} and Dy{sup 3+} ions gives bright green and blue emission upon UV light excitation with CIE coordinates (0.25, 0.46) and (0.25, 0.24), respectively. The monoclinic Y{sub 2}GeO{sub 5} doped with these ions exhibits light green and yellowish white emissions, respectively. This has been attributed to the differences in crystallographic environments around Y{sup 3+} ions in orthorhombic and monoclinic forms of Y{sub 2}GeO{sub 5}. Quantum yield of emission for orthorhombic Y{sub 2}GeO{sub 5}:Tb (∼29%) is significantly higher than that of the monoclinic Y{sub 2}GeO{sub 5}:Tb (∼14%). Lifetime values corresponding to {sup 4}F{sub 9/2} level of Dy{sup 3+} ions in both monoclinic and orthorhombic forms of Y{sub 2}GeO{sub 5} follow an opposite trend with respect to {sup 5}D{sub 4} level of Tb{sup 3+} ions. This is attributed to difference in the concentration quenching mechanism operating for Tb{sup 3+} and Dy{sup 3+} ions.

  4. Localized States Influence Spin Transport in Epitaxial Graphene

    NASA Astrophysics Data System (ADS)

    Maassen, T.; van den Berg, J. J.; Huisman, E. H.; Dijkstra, H.; Fromm, F.; Seyller, T.; van Wees, B. J.

    2013-02-01

    We developed a spin transport model for a diffusive channel with coupled localized states that result in an effective increase of spin precession frequencies and a reduction of spin relaxation times in the system. We apply this model to Hanle spin precession measurements obtained on monolayer epitaxial graphene on SiC(0001). Combined with newly performed measurements on quasi-free-standing monolayer epitaxial graphene on SiC(0001) our analysis shows that the different values for the diffusion coefficient measured in charge and spin transport measurements on monolayer epitaxial graphene on SiC(0001) and the high values for the spin relaxation time can be explained by the influence of localized states arising from the buffer layer at the interface between the graphene and the SiC surface.

  5. Epitaxial Growth of CdTe by H2 Sputtering

    NASA Astrophysics Data System (ADS)

    Nishibayashi, Yoshiki; Tokumitsu, Yoji; Saito, Koji; Imura, Takeshi; Osaka, Yukio

    1988-10-01

    CdTe films can be grown epitaxially on InSb(100) by chemical sputtering in H2. The crystalline quality of the epitaxial layers is improved when the substrate temperatures are in the range of 200 to 250°C at a high rf discharge power of 400 W. In channeling experiments employing Rutherford backscattering spectrometry, the χmin (aligned yield/random yield) in the film prepared at 270°C and 400 W is 9.5%. A lattice strain of 0.05% is obtained from the results of X-ray diffraction. These values show that the crystalline quality of the epitaxial film grown by H2 sputtering is superior to the film grown by Ar sputtering.

  6. Electric circuit model for strained-layer epitaxy

    NASA Astrophysics Data System (ADS)

    Kujofsa, Tedi; Ayers, John E.

    2016-11-01

    For the design and analysis of a strained-layer semiconductor device structure, the equilibrium strain profile may be determined numerically by energy minimization but this method is computationally intense and non-intuitive. Here we present an electric circuit model approach for the equilibrium analysis of an epitaxial stack, in which each sublayer may be represented by an analogous configuration involving a current source, a resistor, a voltage source, and an ideal diode. The resulting node voltages in the analogous electric circuit correspond to the equilibrium strains in the original epitaxial structure. This new approach enables analysis using widely accessible circuit simulators, and an intuitive understanding of electric circuits may be translated to the relaxation of strained-layer structures. In this paper, we describe the mathematical foundation of the electrical circuit model and demonstrate its application to epitaxial layers of Si1‑x Ge x grown on a Si (001) substrate.

  7. Commercial aspects of epitaxial thin film growth in outer space

    NASA Technical Reports Server (NTRS)

    Ignatiev, Alex; Chu, C. W.

    1988-01-01

    A new concept for materials processing in space exploits the ultra vacuum component of space for thin film epitaxial growth. The unique low earth orbit space environment is expected to yield 10 to the -14th torr or better pressures, semiinfinite pumping speeds and large ultra vacuum volume (about 100 cu m) without walls. These space ultra vacuum properties promise major improvement in the quality, unique nature, and the throughput of epitaxially grown materials especially in the area of semiconductors for microelectronics use. For such thin film materials there is expected a very large value added from space ultra vacuum processing, and as a result the application of the epitaxial thin film growth technology to space could lead to major commercial efforts in space.

  8. Deterministic Two-Dimensional Polymorphism Growth of Hexagonal n-Type SnS₂ and Orthorhombic p-Type SnS Crystals.

    PubMed

    Ahn, Ji-Hoon; Lee, Myoung-Jae; Heo, Hoseok; Sung, Ji Ho; Kim, Kyungwook; Hwang, Hyein; Jo, Moon-Ho

    2015-06-10

    van der Waals layered materials have large crystal anisotropy and crystallize spontaneously into two-dimensional (2D) morphologies. Two-dimensional materials with hexagonal lattices are emerging 2D confined electronic systems at the limit of one or three atom thickness. Often these 2D lattices also form orthorhombic symmetries, but these materials have not been extensively investigated, mainly due to thermodynamic instability during crystal growth. Here, we show controlled polymorphic growth of 2D tin-sulfide crystals of either hexagonal SnS2 or orthorhombic SnS. Addition of H2 during the growth reaction enables selective determination of either n-type SnS2 or p-type SnS 2D crystal of dissimilar energy band gap of 2.77 eV (SnS2) or 1.26 eV (SnS) as a final product. Based on this synthetic 2D polymorphism of p-n crystals, we also demonstrate p-n heterojunctions for rectifiers and photovoltaic cells, and complementary inverters.

  9. Hybrid quasiparticles within the orthorhombic or hexagonal topology of RMO3 (R =Nd,Pr,Tm,Er; M =Mn,Cr) under strong magnetic fields

    NASA Astrophysics Data System (ADS)

    Sopracase, R.; Holldack, K.; Del Campo, L.; Massa, N. E.; Martínez-Lope, M. J.; Alonso, J. A.

    2014-03-01

    We report on magnetoelectric quasiparticles that originate from electronic Coulomb and exchange correlations using a Bruker IFS125-HR interferometer at 0.5 cm-1 resolution in the THz beamline of the electron storage ring BESSYII in Berlin. Orthorhombic NdMnO3 and hexagonal TmMnO3 have quasiparticles at energies of zone center magnons. In both cases, increasing the applied field, the ~ 20 cm-1 line matching the lowest energy magnon, has its intensity reduced sharply while bands associated in TmMnO3 to magnon-acoustical phonon dispersion crossing and gap opening behave differently. The line at ~ 48 cm-1, the higher branch of the phonon gap, shows a Zeeman splitting-like behavior, while the lower branch at ~ 31 cm-1 has weak field dependences. The asymmetric envelope peaking at ~ 35 cm-1 in NdMnO3 weakens, softens, and evolves at 8 T into two unresolved bands suggesting field induced TA +magnon coupling materializing a condition for a multiferroic state. Metastable orthorhombic ErMnO3 has two bands at 5 K which resembles those of NdMnO3. A remarkable 35 cm-1 Zeeman splitting at 5 K in PrCrO3 is tentatively associated to Cr3+ electrons in a distorted polarizable p-d bond. ErCrO3 shows such a feature at 50 cm-1 as well additional zero field splitting at 8 and 9 cm-1 in the spin reorientation phase.

  10. Structural studies of the rhombohedral and orthorhombic monouranates: CaUO4, α-SrUO4, β-SrUO4 and BaUO4

    NASA Astrophysics Data System (ADS)

    Murphy, Gabriel; Kennedy, Brendan J.; Johannessen, Bernt; Kimpton, Justin A.; Avdeev, Maxim; Griffith, Christopher S.; Thorogood, Gordon J.; Zhang, Zhaoming

    2016-05-01

    The structures of some AUO4 (A=Ca, Sr, or Ba) oxides have been determined using a combination of neutron and synchrotron X-ray diffraction, supported by X-ray absorption spectroscopic measurements at the U L3-edge. The smaller Ca cation favours a rhombohedral AUO4 structure with 8-coordinate UO8 moieties whilst an orthorhombic structure based on UO6 groups is found for BaUO4. Both the rhombohedral and orthorhombic structures can be stabilised for SrUO4. The structural studies suggest that the bonding requirements of the A site cation play a significant role in determining which structure is favoured. In the rhombohedral structure, Bond Valence Sums demonstrate the A site is invariably overbonded, which, in the case of rhombohedral α-SrUO4, is compensated for by the formation of vacancies in the oxygen sub-lattice. The uranium cation, with its flexible oxidation state, is able to accommodate this by inducing vacancies along its equatorial coordination site as demonstrated by neutron powder diffraction.

  11. Synthesis of Tetragonal and Orthorhombic Polymorphs of Hf3N4 by High-Pressure Annealing of a Prestructured Nanocrystalline Precursor

    PubMed Central

    2013-01-01

    Hf3N4 in nanocrystalline form is produced by solution phase reaction of Hf(NEtMe)4 with ammonia followed by low-temperature pyrolysis in ammonia. Understanding of phase behavior in these systems is important because early transition-metal nitrides with the metal in maximum oxidation state are potential visible light photocatalysts. A combination of synchrotron powder X-ray diffraction and pair distribution function studies has been used to show this phase to have a tetragonally distorted fluorite structure with 1/3 vacancies on the anion sites. Laser heating nanocrystalline Hf3N4 at 12 GPa and 1500 K in a diamond anvil cell results in its crystallization with the same structure type, an interesting example of prestructuring of the phase during preparation of the precursor compound. This metastable pathway could provide a route to other new polymorphs of metal nitrides and to nitrogen-rich phases where they do not currently exist. Importantly it leads to bulk formation of the material rather than surface conversion as often occurs in elemental combination reactions at high pressure. Laser heating at 2000 K at a higher pressure of 19 GPa results in a further new polymorph of Hf3N4 that adopts an anion deficient cottunite-type (orthorhombic) structure. The orthorhombic Hf3N4 phase is recoverable to ambient pressure and the tetragonal phase is at least partially recoverable. PMID:23721167

  12. Quantitative analyses of oxidation states for cubic SrMnO3 and orthorhombic SrMnO2.5 with electron energy loss spectroscopy

    PubMed Central

    Kobayashi, S.; Tokuda, Y.; Mizoguchi, T.; Shibata, N.; Sato, Y.; Ikuhara, Y.; Yamamoto, T.

    2010-01-01

    The oxidation state of Mn in cubic SrMnO3 and orthorhombic SrMnO2.5 was investigated by electron energy loss (EEL) spectroscopy. Change in the oxidation state of Mn produced some spectral changes in the O-K edge as well as in the Mn-L2,3 edge EEL spectra. This study demonstrated that the oxidation state of Mn and the amount of oxygen vacancies in cubic SrMnO3 and orthorhombic SrMnO2.5 could be quantified by analyzing the features of the O-K edge spectrum and the Mn L3∕L2 ratio in the Mn-L2,3 edge spectrum. Our quantitative analysis showed that the spectral changes in the Mn-L2,3 edge were mainly caused by the oxidation state of Mn, whereas those in the O-K edge could be sensitive to both the oxidation state of Mn and to lattice distortions. PMID:21245943

  13. Angle-resolved photoemission spectroscopy of strontium lanthanum copper oxide thin films grown by molecular-beam epitaxy

    NASA Astrophysics Data System (ADS)

    Harter, John Wallace

    Among the multitude of known cuprate material families and associated structures, the archetype is "infinite-layer" ACuO2, where perfectly square and flat CuO2 planes are separated by layers of alkaline earth atoms. The infinite-layer structure is free of magnetic rare earth ions, oxygen chains, orthorhombic distortions, incommensurate superstructures, ordered vacancies, and other complications that abound among the other material families. Furthermore, it is the only cuprate that can be made superconducting by both electron and hole doping, making it a potential platform for decoding the complex many-body interactions responsible for high-temperature superconductivity. Research on the infinite-layer compound has been severely hindered by the inability to synthesize bulk single crystals, but recent progress has led to high-quality superconducting thin film samples. Here we report in situ angle-resolved photoemission spectroscopy measurements of epitaxially-stabilized Sr1-chiLa chiCuO2 thin films grown by molecular-beam epitaxy. At low doping, the material exhibits a dispersive lower Hubbard band typical of other cuprate parent compounds. As carriers are added to the system, a continuous evolution from Mott insulator to superconducting metal is observed as a coherent low-energy band develops on top of a concomitant remnant lower Hubbard band, gradually filling in the Mott gap. For chi = 0.10, our results reveal a strong coupling between electrons and (pi,pi) anti-ferromagnetism, inducing a Fermi surface reconstruction that pushes the nodal states below the Fermi level and realizing nodeless superconductivity. Electron diffraction measurements indicate the presence of a surface reconstruction that is consistent with the polar nature of Sr1-chiLachiCuO2. Most knowledge about the electron-doped side of the cuprate phase diagram has been deduced by generalizing from a single material family, Re2-chi CechiCuO4, where robust antiferromagnetism has been observed past chi

  14. A molecular beam epitaxy facility for in situ neutron scattering

    SciTech Connect

    Dura, J. A.; LaRock, J.

    2009-07-15

    A molecular beam epitaxy (MBE) facility has been built to enable in situ neutron scattering measurements during growth of epitaxial layers. While retaining the full capabilities of a research MBE chamber, this facility has been optimized for polarized neutron reflectometry measurements. Optimization includes a compact lightweight portable design, a neutron window, controllable magnetic field, deposition across a large 76 mm diameter sample with exceptional flux uniformity, and sample temperatures continuously controllable from 38 to 1375 K. A load lock chamber allows for sample insertion, storage of up to 4 samples, and docking with other facilities. The design and performance of this chamber are described here.

  15. Seed layer technique for high quality epitaxial manganite films

    PubMed Central

    Graziosi, P.; Gambardella, A.; Calbucci, M.; O’Shea, K.; MacLaren, D. A.; Bergenti, I.; Homonnay, N.; Schmidt, G.; Pullini, D.; Busquets-Mataix, D.; Dediu, V.

    2016-01-01

    We introduce an innovative approach to the simultaneous control of growth mode and magnetotransport properties of manganite thin films, based on an easy-to-implement film/substrate interface engineering. The deposition of a manganite seed layer and the optimization of the substrate temperature allows a persistent bi-dimensional epitaxy and robust ferromagnetic properties at the same time. Structural measurements confirm that in such interface-engineered films, the optimal properties are related to improved epitaxy. A new growth scenario is envisaged, compatible with a shift from heteroepitaxy towards pseudo-homoepitaxy. Relevant growth parameters such as formation energy, roughening temperature, strain profile and chemical states are derived.

  16. Seed layer technique for high quality epitaxial manganite films

    NASA Astrophysics Data System (ADS)

    Graziosi, P.; Gambardella, A.; Calbucci, M.; O'Shea, K.; MacLaren, D. A.; Riminucci, A.; Bergenti, I.; Fugattini, S.; Prezioso, M.; Homonnay, N.; Schmidt, G.; Pullini, D.; Busquets-Mataix, D.; Dediu, V.

    2016-08-01

    We introduce an innovative approach to the simultaneous control of growth mode and magnetotransport properties of manganite thin films, based on an easy-to-implement film/substrate interface engineering. The deposition of a manganite seed layer and the optimization of the substrate temperature allows a persistent bi-dimensional epitaxy and robust ferromagnetic properties at the same time. Structural measurements confirm that in such interface-engineered films, the optimal properties are related to improved epitaxy. A new growth scenario is envisaged, compatible with a shift from heteroepitaxy towards pseudo-homoepitaxy. Relevant growth parameters such as formation energy, roughening temperature, strain profile and chemical states are derived.

  17. Seed layer technique for high quality epitaxial manganite films

    PubMed Central

    Graziosi, P.; Gambardella, A.; Calbucci, M.; O’Shea, K.; MacLaren, D. A.; Bergenti, I.; Homonnay, N.; Schmidt, G.; Pullini, D.; Busquets-Mataix, D.; Dediu, V.

    2016-01-01

    We introduce an innovative approach to the simultaneous control of growth mode and magnetotransport properties of manganite thin films, based on an easy-to-implement film/substrate interface engineering. The deposition of a manganite seed layer and the optimization of the substrate temperature allows a persistent bi-dimensional epitaxy and robust ferromagnetic properties at the same time. Structural measurements confirm that in such interface-engineered films, the optimal properties are related to improved epitaxy. A new growth scenario is envisaged, compatible with a shift from heteroepitaxy towards pseudo-homoepitaxy. Relevant growth parameters such as formation energy, roughening temperature, strain profile and chemical states are derived. PMID:27648371

  18. Process for growing epitaxial gallium nitride and composite wafers

    DOEpatents

    Weber, Eicke R.; Subramanya, Sudhir G.; Kim, Yihwan; Kruger, Joachim

    2003-05-13

    A novel growth procedure to grow epitaxial Group III metal nitride thin films on lattice-mismatched substrates is proposed. Demonstrated are the quality improvement of epitaxial GaN layers using a pure metallic Ga buffer layer on c-plane sapphire substrate. X-ray rocking curve results indicate that the layers had excellent structural properties. The electron Hall mobility increases to an outstandingly high value of .mu.>400 cm.sup.2 /Vs for an electron background concentration of 4.times.10.sup.17 cm.sup.-3.

  19. Electron irradiation effects in epitaxial InP solar cells

    NASA Technical Reports Server (NTRS)

    Pearsall, N. M.; Robson, N.; Sambell, A. J.; Anspaugh, B.; Cross, T. A.

    1991-01-01

    Performance data for InP-based solar cells after irradiation with 1-MeV electrons up to a fluence of 1 x 1016 e/cm2 are presented. Three InP cell structures are considered. Two of these have epitaxially grown active regions, these being a homojunction design and in ITO/InP structure. These are compared with ITO/InP cells without the epitaxial base region. The cell parameter variations, the influence of illumination during irradiation, and the effect on cell spectral response and capacitance measurements are discussed. Substantial performance recovery after thermal annealing at 90 C is reported.

  20. Optical Probing of metamagnetic phases in epitaxial EuSe

    SciTech Connect

    Galgano, G. D.; Henriques, A. B.; Bauer, G.; Springholz, G.

    2011-12-23

    EuSe is a wide gap magnetic semiconductors with a potential for applications in proof-of-concept spintronic devices. When the temperature is lowered, EuSe goes through sharp transitions between a variety of magnetic phases and is thus described as metamagnetic. The purpose of the present investigation is to correlate the magnetic order to the sharp dichroic doublet, discovered recently in high quality thin epitaxial layers of EuSe, grown by molecular beam epitaxy. We report detailed measurements of the doublet positions and intensities as a function of magnetic field in low temperatures, covering several magnetic phases.

  1. Molecular beam epitaxial growth of GaP on Si

    NASA Astrophysics Data System (ADS)

    Wright, S. L.; Kroemer, H.; Inada, M.

    1984-04-01

    The molecular beam epitaxial growth of GaP on Si was investigated, with the aim of at least approaching device-quality interfaces. Gallium-primed growth on (211)-oriented substrates yielded layers which were free of antiphase domains, and which were of much higher quality than growths on other orientations. A tentative energy-band lineup is proposed, which is consistent with the electrical data. Heterojunction bipolar transistors were fabricated with emitter injection efficiencies up to 90 percent, in spite of indications that the epitaxial emitter layer was far less heavily doped than the base.

  2. In-situ epitaxial growth of graphene/h-BN van der Waals heterostructures by molecular beam epitaxy.

    PubMed

    Zuo, Zheng; Xu, Zhongguang; Zheng, Renjing; Khanaki, Alireza; Zheng, Jian-Guo; Liu, Jianlin

    2015-01-01

    Van der Waals materials have received a great deal of attention for their exceptional layered structures and exotic properties, which can open up various device applications in nanoelectronics. However, in situ epitaxial growth of dissimilar van der Waals materials remains challenging. Here we demonstrate a solution for fabricating van der Waals heterostructures. Graphene/hexagonal boron nitride (h-BN) heterostructures were synthesized on cobalt substrates by using molecular beam epitaxy. Various characterizations were carried out to evaluate the heterostructures. Wafer-scale heterostructures consisting of single-layer/bilayer graphene and multilayer h-BN were achieved. The mismatch angle between graphene and h-BN is below 1°.

  3. Au impact on GaAs epitaxial growth on GaAs (111)B substrates in molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Liao, Zhi-Ming; Chen, Zhi-Gang; Lu, Zhen-Yu; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Chen, Ping-Ping; Lu, Wei; Zou, Jin

    2013-02-01

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {111}B substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {113}B faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  4. Growth and crystallographic characterization of molecular beam epitaxial WO3 and MoO3/WO3 thin films on sapphire substrates

    NASA Astrophysics Data System (ADS)

    Yano, Mitsuaki; Koike, Kazuto; Matsuo, Masayuki; Murayama, Takayuki; Harada, Yoshiyuki; Inaba, Katsuhiko

    2016-09-01

    Molecular beam epitaxy of tungsten trioxide (WO3) on (01 1 bar 2)-oriented (r-plane) sapphire substrates and molybdenum trioxide (MoO3) on the WO3 was studied by focusing on their crystallogrhaphic properties. Although polycrystalline monoclinic (γ-phase) WO3 films were grown at 500 °C and they became single-crystalline (0 0 1)-oriented γ-phase at 700 °C, the latter films were oxygen-deficient from stoichiometry and contained dense and deep thermal etchpits. By using a two-step growth method where only the initial 15 nm was grown at 700 °C and the rest part was grown at 500 °C, (0 0 1)-oriented γ-phase single-crystalline WO3 films with stoichiometric composition and smooth surface were obtained. On top of the 15-nm-thick WO3 initiation layer, (1 1 0)-oriented orthorhombic (α-phase) MoO3 films with smooth surface were obtained.

  5. Depositing spacing layers on magnetic film with liquid phase epitaxy

    NASA Technical Reports Server (NTRS)

    Moody, J. W.; Shaw, R. W.; Sanfort, R. M.

    1975-01-01

    Liquid phase epitaxy spacing layer is compatible with systems which are hard-bubble proofed by use of second magnetic garnet film as capping layer. Composite is superior in that: circuit fabrication time is reduced; adherence is superior; visibility is better; and, good match of thermal expansion coefficients is provided.

  6. Crystallization engineering as a route to epitaxial strain control

    SciTech Connect

    Akbashev, Andrew R.; Plokhikh, Aleksandr V.; Barbash, Dmitri; Lofland, Samuel E.; Spanier, Jonathan E.

    2015-10-01

    The controlled synthesis of epitaxial thin films offers opportunities for tuning their functional properties via enabling or suppressing strain relaxation. Examining differences in the epitaxial crystallization of amorphous oxide films, we report on an alternate, low-temperature route for strain engineering. Thin films of amorphous Bi–Fe–O were grown on (001)SrTiO{sub 3} and (001)LaAlO{sub 3} substrates via atomic layer deposition. In situ X-ray diffraction and X-ray photoelectron spectroscopy studies of the crystallization of the amorphous films into the epitaxial (001)BiFeO{sub 3} phase reveal distinct evolution profiles of crystallinity with temperature. While growth on (001)SrTiO{sub 3} results in a coherently strained film, the same films obtained on (001)LaAlO{sub 3} showed an unstrained, dislocation-rich interface, with an even lower temperature onset of the perovskite phase crystallization than in the case of (001)SrTiO{sub 3}. Our results demonstrate how the strain control in an epitaxial film can be accomplished via its crystallization from the amorphous state.

  7. Growth of Epitaxial Oxide Thin Films on Graphene

    NASA Astrophysics Data System (ADS)

    Zou, Bin; Walker, Clementine; Wang, Kai; Tileli, Vasiliki; Shaforost, Olena; Harrison, Nicholas M.; Klein, Norbert; Alford, Neil M.; Petrov, Peter K.

    2016-08-01

    The transfer process of graphene onto the surface of oxide substrates is well known. However, for many devices, we require high quality oxide thin films on the surface of graphene. This step is not understood. It is not clear why the oxide should adopt the epitaxy of the underlying oxide layer when it is deposited on graphene where there is no lattice match. To date there has been no explanation or suggestion of mechanisms which clarify this step. Here we show a mechanism, supported by first principles simulation and structural characterisation results, for the growth of oxide thin films on graphene. We describe the growth of epitaxial SrTiO3 (STO) thin films on a graphene and show that local defects in the graphene layer (e.g. grain boundaries) act as bridge-pillar spots that enable the epitaxial growth of STO thin films on the surface of the graphene layer. This study, and in particular the suggestion of a mechanism for epitaxial growth of oxides on graphene, offers new directions to exploit the development of oxide/graphene multilayer structures and devices.

  8. Epitaxial gallium oxide on a SiC/Si substrate

    NASA Astrophysics Data System (ADS)

    Kukushkin, S. A.; Nikolaev, V. I.; Osipov, A. V.; Osipova, E. V.; Pechnikov, A. I.; Feoktistov, N. A.

    2016-09-01

    Well-textured gallium oxide β-Ga2O3 layers with a thickness of 1 μm and a close to epitaxial layer structure were grown by the method of chloride vapor phase epitaxy on Si(111) wafers with a nano-SiC buffer layer. In order to improve the growth, a high-quality silicon carbide buffer layer 100 nm thick was preliminarily synthesized by the substitution of atoms on the silicon surface. The β-Ga2O3 films were thoroughly investigated using reflection high-energy electron diffraction, ellipsometry, X-ray diffraction, scanning electron microscopy, and micro-Raman spectroscopy. The investigations revealed that the films are textured with a close to epitaxial structure and consist of a pure β-phase Ga2O3 with the (overline 2 01) orientation. The dependence of the dielectric constant of epitaxial β-Ga2O3 on the photon energy ranging from 0.7 to 6.5 eV in the isotropic approximation was measured.

  9. Epitaxial silicide formation on recoil-implanted substrates

    SciTech Connect

    Hashimoto, Shin; Egashira, Kyoko; Tanaka, Tomoya; Etoh, Ryuji; Hata, Yoshifumi; Tung, R. T.

    2005-01-15

    An epitaxy-on-recoil-implanted-substrate (ERIS) technique is presented. A disordered surface layer, generated by forward recoil implantation of {approx}0.7-3x10{sup 15} cm{sup -2} of oxygen during Ar plasma etching of surface oxide, is shown to facilitate the subsequent epitaxial growth of {approx}25-35-nm-thick CoSi{sub 2} layers on Si(100). The dependence of the epitaxial fraction of the silicide on the recoil-implantation parameters is studied in detail. A reduction in the silicide reaction rate due to recoil-implanted oxygen is shown to be responsible for the observed epitaxial formation, similar to mechanisms previously observed for interlayer-mediated growth techniques. Oxygen is found to remain inside the fully reacted CoSi{sub 2} layer, likely in the form of oxide precipitates. The presence of these oxide precipitates, with only a minor effect on the sheet resistance of the silicide layer, has a surprisingly beneficial effect on the thermal stability of the silicide layers. The agglomeration of ERIS-grown silicide layers on polycrystalline Si is significantly suppressed, likely from a reduced diffusivity due to oxygen in the grain boundaries. The implications of the present technique for the processing of deep submicron devices are discussed.

  10. Growth of Epitaxial Oxide Thin Films on Graphene

    PubMed Central

    Zou, Bin; Walker, Clementine; Wang, Kai; Tileli, Vasiliki; Shaforost, Olena; Harrison, Nicholas M.; Klein, Norbert; Alford, Neil M.; Petrov, Peter K.

    2016-01-01

    The transfer process of graphene onto the surface of oxide substrates is well known. However, for many devices, we require high quality oxide thin films on the surface of graphene. This step is not understood. It is not clear why the oxide should adopt the epitaxy of the underlying oxide layer when it is deposited on graphene where there is no lattice match. To date there has been no explanation or suggestion of mechanisms which clarify this step. Here we show a mechanism, supported by first principles simulation and structural characterisation results, for the growth of oxide thin films on graphene. We describe the growth of epitaxial SrTiO3 (STO) thin films on a graphene and show that local defects in the graphene layer (e.g. grain boundaries) act as bridge-pillar spots that enable the epitaxial growth of STO thin films on the surface of the graphene layer. This study, and in particular the suggestion of a mechanism for epitaxial growth of oxides on graphene, offers new directions to exploit the development of oxide/graphene multilayer structures and devices. PMID:27515496

  11. Spatially Correlated Disorder in Epitaxial van der Waals Heterostructures

    NASA Astrophysics Data System (ADS)

    Laanait, Nouamane; Zhang, Zhan; Schleputz, Christian; Liu, Ying; Wojcik, Michael; Myers-Ward, Rachael; Gaskill, D. Kurt; Fenter, Paul; Li, Lian

    The structural cohesion of van der Waals (vdW) heterostructures relies upon a cooperative balance between strong intra-layer bonded interactions and weak inter-layer coupling. The confinement of extended defects to within a single vdW layer and competing interactions introduced by epitaxial constraints could generate fundamentally new structural disorders. Here we report on the presence of spatially correlated and localized disorder states that coexist with the near perfect crystallographic order along the growth direction of epitaxial vdW heterostructure of Bi2Se3/graphene/SiC grown by molecular beam epitaxy. With the depth penetration of hard X-ray diffraction microscopy and high-resolution surface scattering, we imaged local structural configurations from the atomic to mesoscopic length scales, and found that these disorder states result as a confluence of atomic scale modulations in the strength of vdW layer-layer interactions and nanoscale boundary conditions imposed by the substrate. These findings reveal a vast landscape of novel disorder states that can be manifested in epitaxial vdW heterostructures. Supported by the Wigner Fellowship program at Oak Ridge Nat'l Lab.

  12. Growth of Epitaxial Oxide Thin Films on Graphene.

    PubMed

    Zou, Bin; Walker, Clementine; Wang, Kai; Tileli, Vasiliki; Shaforost, Olena; Harrison, Nicholas M; Klein, Norbert; Alford, Neil M; Petrov, Peter K

    2016-01-01

    The transfer process of graphene onto the surface of oxide substrates is well known. However, for many devices, we require high quality oxide thin films on the surface of graphene. This step is not understood. It is not clear why the oxide should adopt the epitaxy of the underlying oxide layer when it is deposited on graphene where there is no lattice match. To date there has been no explanation or suggestion of mechanisms which clarify this step. Here we show a mechanism, supported by first principles simulation and structural characterisation results, for the growth of oxide thin films on graphene. We describe the growth of epitaxial SrTiO3 (STO) thin films on a graphene and show that local defects in the graphene layer (e.g. grain boundaries) act as bridge-pillar spots that enable the epitaxial growth of STO thin films on the surface of the graphene layer. This study, and in particular the suggestion of a mechanism for epitaxial growth of oxides on graphene, offers new directions to exploit the development of oxide/graphene multilayer structures and devices. PMID:27515496

  13. Electron heat conductivity of epitaxial graphene on silicon carbide

    NASA Astrophysics Data System (ADS)

    Alisultanov, Z. Z.; Meilanov, R. P.

    2016-08-01

    The diagonal component of the electron heat conductivity tensor of epitaxial graphene formed in a semiconductor has been investigated within a simple analytical model. It is shown that the heat conductivity sharply changes at a chemical potential close to the substrate band gap edge. Low-temperature expressions for the heat conductivity are derived.

  14. Hard proximity induced superconducting gap in semiconductor - superconductor epitaxial hybrids

    NASA Astrophysics Data System (ADS)

    Jespersen, Thomas; Krogstrup, Peter; Ziino, Nino; Albrecht, Sven; Chang, Willy; Madsen, Morten; Johnson, Erik; Kuemmeth, Ferdinand; Nygård, Jesper; Marcus, Charles

    2015-03-01

    We present molecular beam epitaxy grown InAs semiconductor nanowires capped with a shell of aluminum (superconductor). The hybrid wires are grown without breaking vacuum, resulting in an epitaxial interface between the two materials as demonstrated by detailed transmission electron microscopy and simulations. The domain matching at the interface is discussed. Incorporating the epitaxial nanowire hybrids in electrical devices we performed detailed tunneling spectroscopy of the proximity induced superconducting gap in the InAs core at 20 mK. We find the sub-gap conductance being at least a factor 200 smaller than the normal state value (gap hardness). This is a significant improvement compared to devices fabricated by conventional lithographic methods and metal evaporation showing no more than a factor of ~ 5 . The epitaxial hybrids seem to solve the soft gap problem associated with the use of nanowire hybrids for future applications in topological quantum information based on Majorana zero modes. Research supported by Microsoft Station Q, Danish National Research Foundation, Villum Foundation, Lundbeck Foundation, and the European Commission.

  15. Multiperiod quantum-cascade nanoheterostructures: Epitaxy and diagnostics

    SciTech Connect

    Egorov, A. Yu. Brunkov, P. N.; Nikitina, E. V.; Pirogov, E. V.; Sobolev, M. S.; Lazarenko, A. A.; Baidakova, M. V.; Kirilenko, D. A.; Konnikov, S. G.

    2014-12-15

    Advances in the production technology of multiperiod nanoheterostructures of quantum-cascade lasers with 60 cascades by molecular-beam epitaxy (MBE) on an industrial multiple-substrate MBE machine are discussed. The results obtained in studying the nanoheterostructures of quantum-cascade lasers by transmission electron microscopy, high-resolution X-ray diffraction analysis, and photoluminescence mapping are presented.

  16. Numerical adiabatic potentials of orthorhombic Jahn-Teller effects retrieved from ultrasound attenuation experiments. Application to the SrF2:Cr crystal

    NASA Astrophysics Data System (ADS)

    Zhevstovskikh, I. V.; Bersuker, I. B.; Gudkov, V. V.; Averkiev, N. S.; Sarychev, M. N.; Zherlitsyn, S.; Yasin, S.; Shakurov, G. S.; Ulanov, V. A.; Surikov, V. T.

    2016-06-01

    A methodology is worked out to retrieve the numerical values of all the main parameters of the six-dimensional adiabatic potential energy surface (APES) of a polyatomic system with a quadratic T-term Jahn-Teller effect (JTE) from the ultrasound experiments. The method is based on a verified assumption that ultrasound attenuation and speed encounter anomalies when the direction of propagation and polarization of its wave of strain coincides with the characteristic directions of symmetry breaking in the JTE. For the SrF2:Cr crystal, employed as a basic example, we observed anomaly peaks in the temperature dependence of attenuation of ultrasound at frequencies of 50-160 MHz in the temperature interval of 40-60 K for the wave propagating along the [110] direction, for both the longitudinal and the shear modes, the latter with two polarizations along the [001] and [1 1 ¯ 0 ] axes, respectively. We show that these anomalies are due to the ultrasound relaxation by the system of non-interacting Cr2+ JT centers with orthorhombic local distortions. The interpretation of the experimental findings is based on the T2 g⊗(eg+t2 g) JTE problem including the linear and the quadratic terms of vibronic interactions in the Hamiltonian and the same-symmetry modes reduced to one interaction mode. Combining the experimental results with a theoretical analysis, we show that on the complicated six-dimensional APES of this system with three tetragonal, four trigonal, and six orthorhombic extrema points, the latter are global minima, while the former are saddle points, and we estimate numerically all the main parameters of this surface, including the linear and quadratic vibronic coupling constants, the primary force constants, the coordinates of all the extrema points and their energies, the energy barrier between the orthorhombic minima, and the tunneling splitting of the ground vibrational states. To our knowledge, such a based-on-experimental-data numerical reconstruction of the APES

  17. An investigation on the defect structures and spin Hamiltonian parameters for the two orthorhombic Ti3+ centers in ZnWO4

    NASA Astrophysics Data System (ADS)

    Ding, Chang-Chun; Wu, Shao-Yi; Zhu, Qing-Sheng; Zhang, Zhi-Hong; Teng, Bao-Hua; Wu, Ming-He

    2015-11-01

    By employing the perturbation formulae of the spin Hamiltonian parameters (SHPs) (g factors gxx, gyy, gzz, hyperfine structure constants Axx, Ayy, Azz and superhyperfine parameters Axx', Ayy', Azz') for a 3d1 ion in orthorhombically elongated octahedra and tetrahedra, the defect structures and the experimental EPR spectra are theoretically and systematically investigated for the two orthorhombic Ti3+ centers C1 and C2 in ZnWO4. Center C1 is ascribed to the impurity Ti3+ at host W6+ site associated with two nearest neighbor oxygen vacancies due to charge compensation. The resultant tetrahedral [TiO4]5- cluster is determined to undergo the local orthorhombic elongation distortion, characterized by the axial distortion angle Δθ (=θ-θ0≈-6.84°) of the local impurity-ligand bond angle θ related to θ0 (≈54.74°) and the perpendicular distortion angle Δε (=ε-ε0≈2.5°) related to ε0 (≈45°) of an ideal tetrahedron because of the Jahn-Teller effect. Center C2 is attributed to Ti3+ on Zn2+ site, and this octahedral [TiO6]9- cluster may experience the local axial elongation ΔZ (≈0.001 Ǻ) and the planar bond angle variation Δφ (≈9.1°) due to the Jahn-Teller effect, resulting in a more regular oxygen octahedron. All the calculated SHPs (i.e., g factors for both centers, the hyperfine structure constants for center C2 and superhyperfine parameters of next nearest neighbor ligand W for center C1) show good agreement with the observed values. However, the theoretical results based on the previous assignment of center C1 as Ti3+ on W6+ site with only one nearest planar oxygen vacancy (i.e., five-fold coordinated octahedral [TiO5]7- cluster) show much worse agreement with the experimental data. The defect structures and the SHPs (especially the g anisotropies) are discussed for both centers. The present studies on the superhyperfine parameters of ligand W6+ for center C1 would be helpful to further investigations on the superhyperfine interactions of

  18. Intrinsically incompatible crystal (ligand) field parameter sets for transition ions at orthorhombic and lower symmetry sites in crystals and their implications

    NASA Astrophysics Data System (ADS)

    Rudowicz, C.; Gnutek, P.

    2010-01-01

    Central quantities in spectroscopy and magnetism of transition ions in crystals are crystal (ligand) field parameters (CFPs). For orthorhombic, monoclinic, and triclinic site symmetry CF analysis is prone to misinterpretations due to large number of CFPs and existence of correlated sets of alternative CFPs. In this review, we elucidate the intrinsic features of orthorhombic and lower symmetry CFPs and their implications. The alternative CFP sets, which yield identical energy levels, belong to different regions of CF parameter space and hence are intrinsically incompatible. Only their ‘images’ representing CFP sets expressed in the same region of CF parameter space may be directly compared. Implications of these features for fitting procedures and meaning of fitted CFPs are categorized into negative: pitfalls and positive: blessings. As a case study, the CFP sets for Tm 3+ ions in KLu(WO 4) 2 are analysed and shown to be intrinsically incompatible. Inadvertent, so meaningless, comparisons of incompatible CFP sets result in various pitfalls, e.g., controversial claims about the values of CFPs obtained by other researchers as well as incorrect structural conclusions or faulty systematics of CF parameters across rare-earth ion series based on relative magnitudes of incompatible CFPs. Such pitfalls bear on interpretation of, e.g., optical spectroscopy, inelastic neutron scattering, and magnetic susceptibility data. An extensive survey of pertinent literature was carried out to assess recognition of compatibility problems. Great portion of available orthorhombic and lower symmetry CFP sets are found intrinsically incompatible, yet these problems and their implications appear barely recognized. The considerable extent and consequences of pitfalls revealed by our survey call for concerted remedial actions of researchers. A general approach based on the rhombicity ratio standardization may solve compatibility problems. Wider utilization of alternative CFP sets in the

  19. On the density of states of disordered epitaxial graphene

    SciTech Connect

    Davydov, S. Yu.

    2015-05-15

    The study is concerned with two types of disordered epitaxial graphene: (i) graphene with randomly located carbon vacancies and (ii) structurally amorphous graphene. The former type is considered in the coherent potential approximation, and for the latter type, a model of the density of states is proposed. The effects of two types of substrates, specifically, metal and semiconductor substrates are taken into account. The specific features of the density of states of epitaxial graphene at the Dirac point and the edges of the continuous spectrum are analyzed. It is shown that vacancies in epitaxial graphene formed on the metal substrate bring about logarithmic nulling of the density of states of graphene at the Dirac point and the edges of the continuous spectrum. If the Dirac point corresponds to the middle of the band gap of the semiconductor substrate, the linear trend of the density of states to zero in the vicinity of the Dirac point in defect-free graphene transforms into a logarithmic decrease in the presence of vacancies. In both cases, the graphene-substrate interaction is assumed to be weak (quasi-free graphene). In the study of amorphous epitaxial graphene, a simple model of free amorphous graphene is proposed as the initial model, in which account is taken of the nonzero density of states at the Dirac point, and then the interaction of the graphene sheet with the substrate is taken into consideration. It is shown that, near the Dirac point, the quadratic behavior of the density of states of free amorphous graphene transforms into a linear dependence for amorphous epitaxial graphene. In the study, the density of states of free graphene corresponds to the low-energy approximation of the electron spectrum.

  20. Cosine (Cobalt Silicide Growth Through Nitrogen-Induced Epitaxy) Process For Epitaxial Cobalt Silicide Formation For High Performance Sha

    SciTech Connect

    Lim, Chong Wee; Shin, Chan Soo; Gall, Daniel; Petrov, Ivan Georgiev; Greene, Joseph E.

    2004-09-28

    A method for forming an epitaxial cobalt silicide layer on a MOS device includes sputter depositing cobalt in an ambient to form a first layer of cobalt suicide on a gate and source/drain regions of the MOS device. Subsequently, cobalt is sputter deposited again in an ambient of argon to increase the thickness of the cobalt silicide layer to a second thickness.

  1. Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth

    SciTech Connect

    Forrest, Stephen R; Zimmerman, Jeramy; Lee, Kyusang; Shiu, Kuen-Ting

    2013-02-19

    There is disclosed methods of making photosensitive devices, such as flexible photovoltaic (PV) devices, through the use of epitaxial liftoff. Also described herein are methods of preparing flexible PV devices comprising a structure having a growth substrate, wherein the selective etching of protective layers yields a smooth growth substrate that us suitable for reuse.

  2. Efficient Interlayer Relaxation and Transition of Excitons in Epitaxial and Non-epitaxial MoS2/WS2 Heterostructures

    DOE PAGES

    Yu, Yifei; Hu, Shi; Su, Liqin; Huang, Lujun; Liu, Yi; Jin, Zhenghe; Puretzky, Alexander A.; Geohegan, David B.; Kim, Ki Wook; Zhang, Yong; et al

    2014-12-03

    Semiconductor heterostructurs provide a powerful platform for the engineering of excitons. Here we report on the excitonic properties of two-dimensional (2D) heterostructures that consist of monolayer MoS2 and WS2 stacked epitaxially or non-epitaxially in the vertical direction. We find similarly efficient interlayer relaxation and transition of excitons in both the epitaxial and non-epitaxial heterostructures. This is manifested by a two orders of magnitude decrease in the photoluminescence and an extra absorption peak at low energy region of both heterostructures. The MoS2/WS2 heterostructures show weak interlayer coupling and essentially act as an atomic-scale heterojunction with the intrinsic band structures of themore » two monolayers largely preserved. They are particularly promising for the applications that request efficient dissociation of excitons and strong light absorption, including photovoltaics, solar fuels, photodetectors, and optical modulators. Our results also indicate that 2D heterostructures promise to provide capabilities to engineer excitons from the atomic level without concerns of interfacial imperfection.« less

  3. Efficient Interlayer Relaxation and Transition of Excitons in Epitaxial and Non-epitaxial MoS2/WS2 Heterostructures

    SciTech Connect

    Yu, Yifei; Hu, Shi; Su, Liqin; Huang, Lujun; Liu, Yi; Jin, Zhenghe; Puretzky, Alexander A.; Geohegan, David B.; Kim, Ki Wook; Zhang, Yong; Cao, Linyou

    2014-12-03

    Semiconductor heterostructurs provide a powerful platform for the engineering of excitons. Here we report on the excitonic properties of two-dimensional (2D) heterostructures that consist of monolayer MoS2 and WS2 stacked epitaxially or non-epitaxially in the vertical direction. We find similarly efficient interlayer relaxation and transition of excitons in both the epitaxial and non-epitaxial heterostructures. This is manifested by a two orders of magnitude decrease in the photoluminescence and an extra absorption peak at low energy region of both heterostructures. The MoS2/WS2 heterostructures show weak interlayer coupling and essentially act as an atomic-scale heterojunction with the intrinsic band structures of the two monolayers largely preserved. They are particularly promising for the applications that request efficient dissociation of excitons and strong light absorption, including photovoltaics, solar fuels, photodetectors, and optical modulators. Our results also indicate that 2D heterostructures promise to provide capabilities to engineer excitons from the atomic level without concerns of interfacial imperfection.

  4. Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth

    DOEpatents

    Forrest, Stephen R; Zimmerman, Jeramy; Lee, Kyusang; Shiu, Kuen-Ting

    2015-01-06

    There is disclosed methods of making photosensitive devices, such as flexible photovoltaic (PV) devices, through the use of epitaxial liftoff. Also described herein are methods of preparing flexible PV devices comprising a structure having a growth substrate, wherein the selective etching of protective layers yields a smooth growth substrate that us suitable for reuse.

  5. Negative thermal expansion correlated with polyhedral movements and distortions in orthorhombic Y{sub 2}Mo{sub 3}O{sub 12}

    SciTech Connect

    Wang, Lei; Wang, Fei; Yuan, Peng-Fei; Sun, Qiang; Liang, Er-Jun; Jia, Yu; Guo, Zheng-Xiao

    2013-07-15

    Graphical abstract: Our work confirms the negative thermal expansion (NTE) behavior of the orthorhombic Y{sub 2}Mo{sub 3}O{sub 12} in this range 0–1000 K. The orthorhombic Y{sub 2}Mo{sub 3}O{sub 12} has an open framework structure where MoO{sub 4} tetrahedra and YO{sub 6} octahedra are connected by oxygen atoms. The previous mechanisms for the NTE behavior of orthorhombic Y{sub 2}Mo{sub 3}O{sub 12} are that the translational mode (see (b)) of the O bridge atoms in Y-O-Mo linkages will cause the linkages to be bent, reducing the space between polyhedra and making the volumetric shrinkage. Furthermore, the internal polyhedral distortions have been reported experimentally. It is necessary to reveal the relationship between NTE and polyhedral movements, distortions. From the vibrational properties, we get that the different vibrational eigenvectors of oxygen atoms relative to Y or Mo atoms can lead internal polyhedra to distort unevenly (see (c)). Herein, an extended 3D model of the connected unit YO{sub 6}-MoO{sub 4} based on the Y-O-Mo linkage is proposed (see (a)). It presents a simultaneous dynamic process, i.e. the YO{sub 6} octahedra and MoO{sub 4} tetrahedra distort unevenly, along with both polyhedra being closer which makes the volumetric contraction. This model is helpful to improve the mechanisms of NTE and may be applied in the whole A{sub 2}M{sub 3}O{sub 12} family. - Highlights: • The NTE properties of Y{sub 2}Mo{sub 3}O{sub 12} are confirmed using a first-principles calculation. • The optical branch with the lowest frequency is most responsible for the NTE. • The relationship between NTE and polyhedral movements, distortions is elucidated. • An extended 3D model of the connected unit YO{sub 6}-MoO{sub 4} is proposed. - Abstract: The internal polyhedral distortions have been reported experimentally in orthorhombic Y{sub 2}Mo{sub 3}O{sub 12} as a negative thermal expansion (NTE) material. To reveal the relationship between NTE and polyhedral

  6. Comment on "High-pressure synthesis of orthorhombic SrIrO3 perovskite and its positive magnetoresistance" [J. Appl. Phys. 103, 103706 (2008)

    NASA Astrophysics Data System (ADS)

    Puggioni, D.; Rondinelli, J. M.

    2016-02-01

    In their article, Zhao et al. report the synthesis of SrIrO3 at high temperature and high pressure [J. Appl. Phys. 103, 103706 (2008)]. Under these conditions, the crystal structure of SrIrO3 can be stabilized as an orthorhombic perovskite with space group Pnma. They refine the lattice parameters and list the Wyckoff orbits and atomic coordinates. We believe that Zhao and coworkers made an unintentional error in reporting the crystal structure, which may adversely affect the description of the electronic structure. Indeed, we show the reported structure does not define a standard perovskite with nearly rigid IrO6 octahedral tilts and rather exhibits a structural discrepancy with respect to the equilibrium structure obtained from density functional calculations.

  7. A simulation study of microwave field effects on a 3D orthorhombic lattice of rotating dipoles: short-range potential energy variation

    NASA Astrophysics Data System (ADS)

    Kapranov, Sergey V.; Kouzaev, Guennadi A.

    2016-05-01

    Variation of the short-range potential energy of interaction of nearest dipoles in a three-dimensional (3D) orthorhombic lattice exposed to microwave electric fields is studied by means of the Langevin dynamics simulations. The global increase of the mean potential energy is typical for all the frequencies and intensities at lower temperatures, whereas separate potential energy peaks or peak chains are observed at intermediate temperatures. A simple statistical model proposed to account for the temperature dependence of the field intensity for potential energy peaks suggests the concerted collective rotation of the dipoles. The temperature dependence of the peak frequency is explained using a combination of the one-dimensional Kramers and the resonant activation theories applied to the field-driven collective rotation, with the nearly degenerate angular coordinates of the dipoles being used as a single effective coordinate.

  8. Simultaneous metal-insulator and antiferromagnetic transitions in orthorhombic perovskite iridate S r0.94I r0.78O2.68 single crystals

    NASA Astrophysics Data System (ADS)

    Zheng, H.; Terzic, J.; Ye, Feng; Wan, X. G.; Wang, D.; Wang, Jinchen; Wang, Xiaoping; Schlottmann, P.; Yuan, S. J.; Cao, G.

    2016-06-01

    The orthorhombic perovskite SrIr O3 is a semimetal, an intriguing exception in iridates where the strong spin-orbit interaction coupled with electron correlations tends to impose an insulating state. We report results of our investigation of bulk single-crystal S r0.94I r0.78O2.68 or Ir-deficient, orthorhombic perovskite SrIr O3 . It retains the same crystal structure as stoichiometric SrIr O3 but exhibits a sharp, simultaneous antiferromagnetic (AFM) and metal-insulator (MI) transition occurring in the basal-plane resistivity at 185 K. Above it, the basal-plane resistivity features an extended regime of almost linear temperature dependence up to 800 K but the strong electronic anisotropy renders an insulating behavior in the out-of-plane resistivity. The Hall resistivity undergoes an abrupt sign change and grows below 40 K, which along with the Sommerfeld constant of 20 mJ /mol K2 suggests a multiband effect. All results including our first-principles calculations underscore a delicacy of the paramagnetic, metallic state in SrIr O3 that is in close proximity to an AFM insulating state. The contrasting ground states in isostructural S r0.94I r0.78O2.68 and SrIr O3 illustrate a critical role of lattice distortions and Ir deficiency in rebalancing the ground state in the iridates. Finally, the concurrent AFM and MI transitions reveal a direct correlation between the magnetic transition and formation of an activation gap in the iridate, which is conspicuously absent in S r2Ir O4 .

  9. Robust conductive mesoporous carbon-silica composite films with highly ordered and oriented orthorhombic structures from triblock-copolymer template co-assembly

    SciTech Connect

    Song, Lingyan; Feng, Dan; Campbell, Casey G; Gu, Dong; Forster, Aaron M; Yager, Kevin G; Fredin, Nathaniel; Lee, Hae-Jeong; Jones, Ronald L; Zhao, Dongyuan; Vogt, Bryan D

    2012-07-11

    In this work, we describe a facile approach to improve the robustness of conductive mesoporous carbon-based thin films by the addition of silica to the matrix through the triconstituent organic-inorganic-organic co-assembly of resol (carbon precursor) and tetraethylorthosilicate (silica precursor) with triblock-copolymer Pluronic F127. The pyrolysis of the resol-silica-pluronic F127 film yields a porous composite thin film with well-defined mesostructure. X-Ray diffraction (XRD), grazing incidence small angle X-ray scattering (GISAXS), and electron microscopy measurements indicate that the obtained carbon-based thin films have a highly ordered orthorhombic mesostructure (Fmmm) with uniform large pore size (~3 nm). The orthorhombic mesostructure is oriented and the (010) plane is parallel to the silicon wafer substrate. The addition of silica to the matrix impacts the pore size, surface area, porosity, modulus and conductivity. For composite films with approximately 40 wt% silica, the conductivity is decreased by approximately an order of magnitude in comparison to a pure carbon mesoporous film, but the conductivity is comparable to typical printed carbon inks used in electrochemical sensing, {approx}10 S cm-1. The mechanical properties of these mesoporous silica-carbon hybrid films are similar to the pure carbon analogs with a Young's modulus between 10 GPa and 15 GPa, but the material is significantly more porous. Moreover, the addition of silica to the matrix appears to improve the adhesion of the mesoporous film to a silicon wafer. These mesoporous silica-carbon composite films have appropriate characteristics for use in sensing applications.

  10. Thermodynamic study of orthorhombic T{sup x} and tetragonal T′ lanthanum cuprate, La{sub 2}CuO{sub 4}

    SciTech Connect

    Lilova, K.I.; Hord, R.; Alff, L.; Albert, B.; Navrotsky, A.

    2013-08-15

    The enthalpies of transition among the T{sup x}, T′, and T–La{sub 2}CuO{sub 4} phases are obtained from a combination of differential scanning calorimetry, high temperature oxide melt solution calorimetry, and transposed temperature drop calorimetry. The enthalpy of transformation of T{sup x} to T is 2.32±0.07 kJ/mol and the corresponding entropy of transition is 4.38±0.13 J/(mol K). The T′ modification, with an average of 1.40 kJ/mol, is less stable in enthalpy than T{sup x} but at 0.96 kJ/mol, more stable in enthalpy than T. Although we cannot rule out a small stability field at temperatures near the T{sup x}–T transition at 530 K, T′ is most likely metastable at all temperatures. - Graphical abstract: Crystal structure of T{sup x} (orthorhombic), T′ and T (tetragonal) modifications of La{sub 2}CuO{sub 4} (left to right). The space group for orthorhombic T{sup x} is Cmce and I4/mmm for both T′ and T structures; copper cations are presented as small purple, lanthanum as large blue and oxygen as large green circles. Highlights: • The enthalpies of transition among the T{sup x} , T′, and T-La{sub 2}CuO{sub 4} phases are obtained. • The T{sup x} phase is the lowest in energy, the T′ higher and the T highest. • T′ phase is metastable at all temperatures.

  11. Effects of high source flow and high pumping speed on gas source molecular beam epitaxy / chemical beam epitaxy

    NASA Astrophysics Data System (ADS)

    McCollum, M. J.; Jackson, S. L.; Szafranek, I.; Stillman, G. E.

    1990-10-01

    We report the growth of GaAs by molecular beam epitaxy (MBE), gas source molecular beam epitaxy (GSMBE), and chemical beam epitaxy (CBE) in an epitaxial III-V reactor which features high pumping speed. The system is comprised of a modified Perkin-Elmer 430P molecular beam epitaxy system and a custom gas source panel from Emcore. The growth chamber is pumped with a 7000 1/s (He) diffusion pump (Varian VHS-10 with Monsanto Santovac 5 oil). The gas source panel includes pressure based flow controllers (MKS 1150) allowing triethylaluminum (TEA), triethylgallium (TEG), and trimethylindium (TMI) to be supplied without the use of hydrogen. All source lines, including arsine and phosphine, are maintained below atmospheric pressure. The high pumping speed allows total system flow rates as high as 100 SCCM and V/III ratios as high as 100. The purity of GaAs grown by MBE in this system increases with pumping speed. GaAs layers grown by GSMBE with arsine flows of 10 and 20 SCCM have electron concentrations of 1 × 10 15 cm -3 (μ 77=48,000 cm 2/V·) and 2 × 10 14 cm -3 (μ 77=78,000 cm 2/V·s) respectively. El ectron concentration varies with hydride injector temperature such that the minimum in electron concentration occurs for less than complete cracking. The effect of V/III ratio and the use of a metal eutectic bubbler on residual carrier concentration in GaAs grown by CBE is presented. Intentional Si and Be doping of CBE grown GaAs is demonstrated at a high growth rate of 5.4 μm/h.

  12. The physics of epitaxial graphene on SiC(0001).

    PubMed

    Kageshima, H; Hibino, H; Tanabe, S

    2012-08-01

    Various physical properties of epitaxial graphene grown on SiC(0001) are studied. First, the electronic transport in epitaxial bilayer graphene on SiC(0001) and quasi-free-standing bilayer graphene on SiC(0001) is investigated. The dependences of the resistance and the polarity of the Hall resistance at zero gate voltage on the top-gate voltage show that the carrier types are electron and hole, respectively. The mobility evaluated at various carrier densities indicates that the quasi-free-standing bilayer graphene shows higher mobility than the epitaxial bilayer graphene when they are compared at the same carrier density. The difference in mobility is thought to come from the domain size of the graphene sheet formed. To clarify a guiding principle for controlling graphene quality, the mechanism of epitaxial graphene growth is also studied theoretically. It is found that a new graphene sheet grows from the interface between the old graphene sheets and the SiC substrate. Further studies on the energetics reveal the importance of the role of the step on the SiC surface. A first-principles calculation unequivocally shows that the C prefers to release from the step edge and to aggregate as graphene nuclei along the step edge rather than be left on the terrace. It is also shown that the edges of the existing graphene more preferentially absorb the isolated C atoms. For some annealing conditions, experiments can also provide graphene islands on SiC(0001) surfaces. The atomic structures are studied theoretically together with their growth mechanism. The proposed embedded island structures actually act as a graphene island electronically, and those with zigzag edges have a magnetoelectric effect. Finally, the thermoelectric properties of graphene are theoretically examined. The results indicate that reducing the carrier scattering suppresses the thermoelectric power and enhances the thermoelectric figure of merit. The fine control of the Fermi energy position is thought to

  13. Surface morphological evolution of epitaxial CrN(001) layers

    SciTech Connect

    Frederick, J.R.; Gall, D.

    2005-09-01

    CrN layers, 57 and 230 nm thick, were grown on MgO(001) at T{sub s}=600-800 deg. C by ultrahigh-vacuum magnetron sputter deposition in pure N{sub 2} discharges from an oblique deposition angle {alpha}=80 deg. . Layers grown at 600 deg. C nucleate as single crystals with a cube-on-cube epitaxial relationship with the substrate. However, rough surfaces with cauliflower-type morphologies cause the nucleation of misoriented CrN grains that develop into cone-shaped grains that protrude out of the epitaxial matrix to form triangular faceted surface mounds. The surface morphology of epitaxial CrN(001) grown at 700 deg. C is characterized by dendritic ridge patterns extending along the orthogonal <110> directions superposed by square-shaped super mounds with <100> edges. The ridge patterns are attributed to a Bales-Zangwill instability while the supermounds form due to atomic shadowing which leads to the formation of epitaxial inverted pyramids that are separated from the surrounding layer by tilted nanovoids. Growth at 800 deg. C yields complete single crystals with smooth surfaces. The root-mean-square surface roughness for 230-nm-thick layers decreases from 18.8 to 9.3 to 1.1 nm as T{sub s} is raised from 600 to 700 to 800 deg. C. This steep decrease is due to a transition in the roughening mechanism from atomic shadowing to kinetic roughening. Atomic shadowing is dominant at 600 and 700 deg. C, where misoriented grains and supermounds, respectively, capture a larger fraction of the oblique deposition flux in comparison to the surrounding epitaxial matrix, resulting in a high roughening rate that is described by a power law with an exponent {beta}>0.5. In contrast, kinetic roughening controls the surface morphology for T{sub s}=800 deg. C, as well as the epitaxial fraction of the layers grown at 600 and 700 deg. C, yielding relatively smooth surfaces and {beta}{<=}0.27.

  14. Magnetism and epitaxy in Lu/Dy/Lu trilayers

    NASA Astrophysics Data System (ADS)

    Beach, R. S.; Matheny, A.; Salamon, M. B.; Flynn, C. P.; Borchers, J. A.; Erwin, R. W.; Rhyne, J. J.

    1993-05-01

    Thin dysprosium c-axis films (40-400 Å) were grown coherently between 500-Å lutetium layers by molecular beam epitaxy. Bulk magnetization measurements show that these sandwich structures order magnetically at TN≂178 K (=TN of elemental Dy) and undergo ferromagnetic transitions at temperatures which range from 100 K (400 Å Dy) to 175 K (40 Å Dy), significantly enhanced from the bulk TC=85 K. The Dy basal plane lattice parameters in the films were determined by room-temperature x-ray diffraction. We observe a change in these values that correlates with the rise in TC, which suggests that this rise is due to epitaxial strain. The relatively small low-temperature magnetic susceptibility displayed by these samples indicates the presence of a large anisotropy in the basal plane. We address both the issues of the susceptibility and the high ferromagnetic transition temperature.

  15. Anti-damping spin transfer torque through epitaxial nickel oxide

    SciTech Connect

    Moriyama, Takahiro; Nagata, Masaki; Yoshimura, Yoko; Matsuzaki, Noriko; Ono, Teruo; Takei, So; Tserkovnyak, Yaroslav; Terashima, Takahito

    2015-04-20

    We prepare the high quality epitaxial MgO(001)[100]/Pt(001)[100]/NiO(001)[100]/FeNi/SiO{sub 2} films to investigate the spin transport in the NiO antiferromagnetic insulator. The ferromagnetic resonance measurements of the FeNi under a spin current injection from the Pt by the spin Hall effect revealed the change of the ferromagnetic resonance linewidth depending on the amount of the spin current injection. The results can be interpreted that there is an angular momentum transfer through the NiO. A high efficient angular momentum transfer we observed in the epitaxial NiO can be attributed to the well-defined orientation of the antiferromagnetic moments and the spin quantization axis of the injected spin current.

  16. Nanoscale electrical properties of epitaxial Cu3Ge film.

    PubMed

    Wu, Fan; Cai, Wei; Gao, Jia; Loo, Yueh-Lin; Yao, Nan

    2016-01-01

    Cu3Ge has been pursued as next-generation interconnection/contact material due to its high thermal stability, low bulk resistivity and diffusion barrier property. Improvements in electrical performance and structure of Cu3Ge have attracted great attention in the past decades. Despite the remarkable progress in Cu3Ge fabrication on various substrates by different deposition methods, polycrystalline films with excess Ge were frequently obtained. Moreover, the characterization of nanoscale electrical properties remains challenging. Here we show the fabrication of epitaxial Cu3Ge thin film and its nanoscale electrical properties, which are directly correlated with localized film microstructures and supported by HRTEM observations. The average resistivity and work function of epitaxial Cu3Ge thin film are measured to be 6 ± 1 μΩ cm and ~4.47 ± 0.02 eV respectively, qualifying it as a good alternative to Cu. PMID:27363582

  17. Spin transport in epitaxial graphene on SiC (0001)

    NASA Astrophysics Data System (ADS)

    Du, Yuchen; Neal, Adam T.; Capano, Mike; Ye, Peide

    2013-03-01

    Graphene has been identified as a promising material for future spintronics devices due to its low spin orbit coupling and long spin diffusion lengths, even at room temperature. However, any device application requires the use of large-area graphene compatible with wafer-scale manufacturing methods, such as graphene grown epitaxially on SiC. We study spin transport in epitaxial graphene grown on SiC (0001) as a step toward future spintronics devices. A non-local spin valve signal of 200m Ω is observed at 77K, with a signal of 50m Ω resolved at 145K. Assuming a contact polarization of 10%, the measured signal corresponds to a spin diffusion length of 130nm at T =77K. Hanle effect spin precession measurements are ongoing.

  18. Single crystalline Si substrate growth by lateral diffusion epitaxy

    NASA Astrophysics Data System (ADS)

    Li, Bo; Yu, Hao Ling; Shen, Huaxiang; Kitai, Adrian

    2013-03-01

    A novel crystal growth method named lateral diffusion epitaxy (LDE) as well as the necessary growth apparatus are described in detail. Single crystalline Si strips are grown on (1 1 1) Si substrates by LDE. The thickness of the LDE Si strips is around 100 μm, and the aspect ratio of width to thickness is around 2 which is an improvement compared with Si strips grown by conventional liquid phase epitaxy (LPE). The LDE Si strip can be peeled off from the substrate for further device processing since the 100 μm thickness provides reasonable mechanical strength. Due to the low cost of LDE technology it is potentially a good candidate for PV application if the LDE can achieve continuous growth and therefore grow Si strips in sizes for practical application.

  19. Nanoscale electrical properties of epitaxial Cu3Ge film

    NASA Astrophysics Data System (ADS)

    Wu, Fan; Cai, Wei; Gao, Jia; Loo, Yueh-Lin; Yao, Nan

    2016-07-01

    Cu3Ge has been pursued as next-generation interconnection/contact material due to its high thermal stability, low bulk resistivity and diffusion barrier property. Improvements in electrical performance and structure of Cu3Ge have attracted great attention in the past decades. Despite the remarkable progress in Cu3Ge fabrication on various substrates by different deposition methods, polycrystalline films with excess Ge were frequently obtained. Moreover, the characterization of nanoscale electrical properties remains challenging. Here we show the fabrication of epitaxial Cu3Ge thin film and its nanoscale electrical properties, which are directly correlated with localized film microstructures and supported by HRTEM observations. The average resistivity and work function of epitaxial Cu3Ge thin film are measured to be 6 ± 1 μΩ cm and ~4.47 ± 0.02 eV respectively, qualifying it as a good alternative to Cu.

  20. On the kinetic barriers of graphene homo-epitaxy

    SciTech Connect

    Zhang, Wei; Yu, Xinke; Xie, Ya-Hong; Cahyadi, Erica; Ratsch, Christian

    2014-12-01

    The diffusion processes and kinetic barriers of individual carbon adatoms and clusters on graphene surfaces are investigated to provide fundamental understanding of the physics governing epitaxial growth of multilayer graphene. It is found that individual carbon adatoms form bonds with the underlying graphene whereas the interaction between graphene and carbon clusters, consisting of 6 atoms or more, is very weak being van der Waals in nature. Therefore, small carbon clusters are quite mobile on the graphene surfaces and the diffusion barrier is negligibly small (∼6 meV). This suggests the feasibility of high-quality graphene epitaxial growth at very low growth temperatures with small carbon clusters (e.g., hexagons) as carbon source. We propose that the growth mode is totally different from 3-dimensional bulk materials with the surface mobility of carbon hexagons being the highest over graphene surfaces that gradually decreases with further increase in cluster size.

  1. Nanoscale electrical properties of epitaxial Cu3Ge film

    PubMed Central

    Wu, Fan; Cai, Wei; Gao, Jia; Loo, Yueh-Lin; Yao, Nan

    2016-01-01

    Cu3Ge has been pursued as next-generation interconnection/contact material due to its high thermal stability, low bulk resistivity and diffusion barrier property. Improvements in electrical performance and structure of Cu3Ge have attracted great attention in the past decades. Despite the remarkable progress in Cu3Ge fabrication on various substrates by different deposition methods, polycrystalline films with excess Ge were frequently obtained. Moreover, the characterization of nanoscale electrical properties remains challenging. Here we show the fabrication of epitaxial Cu3Ge thin film and its nanoscale electrical properties, which are directly correlated with localized film microstructures and supported by HRTEM observations. The average resistivity and work function of epitaxial Cu3Ge thin film are measured to be 6 ± 1 μΩ cm and ~4.47 ± 0.02 eV respectively, qualifying it as a good alternative to Cu. PMID:27363582

  2. Molecular Beam Epitaxy Growth of Iron Phthalocyanine Nanostructures

    SciTech Connect

    Debnath, A. K.; Samanta, S.; Singh, Ajay; Aswal, D. K.; Gupta, S. K.; Yakhmi, J. V.

    2009-06-29

    FePc films of different thickness have been deposited by molecular beam epitaxy (MBE) as a function of substrate temperature (25-300 deg. C) and deposition rate (0.02-0.07 nm/s). The morphology of a 60 nm alpha-phase film has been tuned from nanobrush (nearly parallel nanorods aligned normal to the substrate plane) to nanoweb (nanowires forming a web-like structure in the plane of the substrate) by changing the deposition rate from 0.02 to 0.07 nm/s. We propose growth mechanisms of nanoweb and nanobrush morphology based on the van der Waals (vdW) epitaxy. For air exposed FePc films I-V hysteresis was observed at 300 K and it is attributed to surface traps created by chemisorbed oxygen.

  3. Growth and properties of epitaxial GdN

    SciTech Connect

    Ludbrook, B. M.; Kuebel, M.; Ruck, B. J.; Preston, A. R. H.; Trodahl, H. J.; Farrell, I. L.; Reeves, R. J.; Durbin, S. M.; Ranno, L.

    2009-09-15

    Epitaxial gadolinium nitride films with well-oriented crystallites of up to 30 nm have been grown on yttria-stabilized zirconia substrates using a plasma-assisted pulsed laser deposition technique. We observe that the epitaxial GdN growth proceeds on top of a gadolinium oxide buffer layer that forms via reaction between deposited Gd and mobile oxygen from the substrate. Hall effect measurements show the films are electron doped to degeneracy, with carrier concentrations of 4x10{sup 20} cm{sup -3}. Magnetic measurements establish a T{sub C} of 70 K with a coercive field that can be tuned from 200 Oe to as low as 10 Oe.

  4. Scanning Tunneling Spectroscopy of Proximity Superconductivity in Epitaxial Multilayer Graphene

    PubMed Central

    Natterer, Fabian D.; Ha, Jeonghoon; Baek, Hongwoo; Zhang, Duming; Cullen, William; Zhitenev, Nikolai B.; Kuk, Young; Stroscio, Joseph A.

    2016-01-01

    We report on spatial measurements of the superconducting proximity effect in epitaxial graphene induced by a graphene-superconductor interface. Superconducting aluminum films were grown on epitaxial multilayer graphene on SiC. The aluminum films were discontinuous with networks of trenches in the film morphology reaching down to exposed graphene terraces. Scanning tunneling spectra measured on the graphene terraces show a clear decay of the superconducting energy gap with increasing separation from the graphene-aluminum edges. The spectra were well described by Bardeen-Cooper-Schrieffer (BCS) theory. The decay length for the superconducting energy gap in graphene was determined to be greater than 400 nm. Deviations in the exponentially decaying energy gap were also observed on a much smaller length scale of tens of nanometers. PMID:27088134

  5. Sub-micrometer epitaxial Josephson junctions for quantum circuits

    NASA Astrophysics Data System (ADS)

    Kline, Jeffrey S.; Vissers, Michael R.; da Silva, Fabio C. S.; Wisbey, David S.; Weides, Martin; Weir, Terence J.; Turek, Benjamin; Braje, Danielle A.; Oliver, William D.; Shalibo, Yoni; Katz, Nadav; Johnson, Blake R.; Ohki, Thomas A.; Pappas, David P.

    2012-02-01

    We present a fabrication scheme and testing results for epitaxial sub-micrometer Josephson junctions. The junctions are made using a high-temperature (1170 K) ‘via process’ yielding junctions as small as 0.8 µm in diameter by use of optical lithography. Sapphire (Al2O3) tunnel-barriers are grown on an epitaxial Re/Ti multilayer base-electrode. We have fabricated devices with both Re and Al top-electrodes. While room temperature (295 K) resistance versus area data are favorable for both types of top-electrodes, the low-temperature (50 mK) data show that junctions with the Al top-electrode have a much higher subgap resistance. The microwave loss properties of the junctions have been measured by use of superconducting Josephson junction qubits. The results show that high subgap resistance correlates with improved qubit performance.

  6. Oxidized Monolayers of Epitaxial Silicene on Ag(111)

    NASA Astrophysics Data System (ADS)

    Johnson, Neil W.; Muir, David I.; Moewes, Alexander

    2016-03-01

    The properties of epitaxial silicene monolayers on Ag(111) at various levels of oxidation are determined through complementary density functional theory calculations and soft X-ray spectroscopy experiments. Our calculations indicate that moderate levels of oxidation do not cause a significant bandgap opening in the epitaxial silicene monolayer, suggesting that oxygen functionalization is not a viable mechanism for bandgap tuning while the silicene monolayer remains on its metallic substrate. In addition, moderate oxidation is calculated to strongly distort the hexagonal Si lattice, causing it to cluster in regions of highest oxygen adatom concentration but retain its 2D sheet structure. However, our experiments reveal that beam-induced oxidation is consistent with the formation of islands of bulk-like SiO2. Complete exposure of the monolayer to ambient conditions results in a fully oxidized sample that closely resembles bulk SiO2, of which a significant portion is completely detached from the substrate.

  7. Oxidized Monolayers of Epitaxial Silicene on Ag(111)

    PubMed Central

    Johnson, Neil W.; Muir, David I.; Moewes, Alexander

    2016-01-01

    The properties of epitaxial silicene monolayers on Ag(111) at various levels of oxidation are determined through complementary density functional theory calculations and soft X-ray spectroscopy experiments. Our calculations indicate that moderate levels of oxidation do not cause a significant bandgap opening in the epitaxial silicene monolayer, suggesting that oxygen functionalization is not a viable mechanism for bandgap tuning while the silicene monolayer remains on its metallic substrate. In addition, moderate oxidation is calculated to strongly distort the hexagonal Si lattice, causing it to cluster in regions of highest oxygen adatom concentration but retain its 2D sheet structure. However, our experiments reveal that beam-induced oxidation is consistent with the formation of islands of bulk-like SiO2. Complete exposure of the monolayer to ambient conditions results in a fully oxidized sample that closely resembles bulk SiO2, of which a significant portion is completely detached from the substrate. PMID:26936144

  8. Oxidized Monolayers of Epitaxial Silicene on Ag(111).

    PubMed

    Johnson, Neil W; Muir, David I; Moewes, Alexander

    2016-03-03

    The properties of epitaxial silicene monolayers on Ag(111) at various levels of oxidation are determined through complementary density functional theory calculations and soft X-ray spectroscopy experiments. Our calculations indicate that moderate levels of oxidation do not cause a significant bandgap opening in the epitaxial silicene monolayer, suggesting that oxygen functionalization is not a viable mechanism for bandgap tuning while the silicene monolayer remains on its metallic substrate. In addition, moderate oxidation is calculated to strongly distort the hexagonal Si lattice, causing it to cluster in regions of highest oxygen adatom concentration but retain its 2D sheet structure. However, our experiments reveal that beam-induced oxidation is consistent with the formation of islands of bulk-like SiO2. Complete exposure of the monolayer to ambient conditions results in a fully oxidized sample that closely resembles bulk SiO2, of which a significant portion is completely detached from the substrate.

  9. Faceted ceramic fibers, tapes or ribbons and epitaxial devices therefrom

    SciTech Connect

    Goyal, Amit

    2013-07-09

    A crystalline article includes a single-crystal ceramic fiber, tape or ribbon. The fiber, tape or ribbon has at least one crystallographic facet along its length, which is generally at least one meter long. In the case of sapphire, the facets are R-plane, M-plane, C-plane or A-plane facets. Epitaxial articles, including superconducting articles, can be formed on the fiber, tape or ribbon.

  10. Faceted ceramic fibers, tapes or ribbons and epitaxial devices therefrom

    SciTech Connect

    Goyal, Amit

    2012-07-24

    A crystalline article includes a single-crystal ceramic fiber, tape or ribbon. The fiber, tape or ribbon has at least one crystallographic facet along its length, which is generally at least one meter long. In the case of sapphire, the facets are R-plane, M-plane, C-plane or A-plane facets. Epitaxial articles, including superconducting articles, can be formed on the fiber, tape or ribbon.

  11. Epitaxial Fe on free-standing GaAs nanowires

    NASA Astrophysics Data System (ADS)

    Yang, Mingze; Darbandi, Ali; Majumder, Sarmita; Watkins, Simon; Kavanagh, Karen

    2016-07-01

    Epitaxial Fe contacts have been fabricated onto the top half of free-standing, Te-doped GaAs nanowires (NWs) via electrodeposition. Electrical isolation from the substrate via a polymeric layer enabled the measurement of electrical transport through individual wires. Using a fixed probe within a scanning electron microscope, an average metal-semiconductor diode barrier height of 0.69 ± 0.03 eV (ideality factor 1.48 ± 0.02) was found.

  12. Characterization of epitaxially grown films of vanadium oxides

    SciTech Connect

    Rogers, K.D.; Coath, J.A.; Lovell, M.C. , Shrivenham, Swindon, Wiltshire, SN6 8LA, England )

    1991-08-01

    The growth of VO{sub 2} and V{sub 2}O{sub 3} thin films by reactive sputtering has been investigated. Previously reported studies of such thin films have often presented ambiguous results concerning the precise nature of the layers produced. A thorough and comprehensive characterization program including x-ray diffraction, scanning electron microscopy, Rutherford-backscattering spectroscopy, and electrical conductivity measurements has been undertaken to ensure that the films produced were of a true epitaxial nature.

  13. Heterogeneous integration of epitaxial nanostructures: strategies and application drivers

    NASA Astrophysics Data System (ADS)

    Chui, Chi On; Shin, Kyeong-Sik; Kina, Jorge; Shih, Kun-Huan; Narayanan, Pritish; Moritz, C. Andras

    2012-10-01

    In order to sustain the historic progress in information processing, transmission, and storage, concurrent integration of heterogeneous functionality and materials with fine granularity is clearly imperative for the best connectivity, system performance, and density metrics. In this paper, we review recent developments in heterogeneous integration of epitaxial nanostructures for their applications toward our envisioned device-level heterogeneity using computing nanofabrics. We first identify the unmet need for heterogeneous integration in modern nanoelectronics and review state-of-the-art assembly approaches for nanoscale computing fabrics. We also discuss the novel circuit application driver, known as Nanoscale Application Specific Integrated Circuits (NASICs), which promises an overall performance-power-density advantage over CMOS and embeds built-in defect and parameter variation resilience. At the device-level, we propose an innovative cross-nanowire field-effect transistor (xnwFET) structure that simultaneously offers high performance, low parasitics, good electrostatic control, ease-of-manufacturability, and resilience to process variation. In addition, we specify technology requirements for heterogeneous integration and present two wafer-scale strategies. The first strategy is based on ex situ assembly and stamping transfer of pre-synthesized epitaxial nanostructures that allows tight control over key nanofabric parameters. The second strategy is based on lithographic definition of epitaxial nanostructures on native substrates followed by their stamping transfer using VLSI foundry processes. Finally, we demonstrate the successful concurrent heterogeneous co-integration of silicon and III-V compound semiconductor epitaxial nanowire arrays onto the same hosting substrate over large area, at multiple locations, with fine granularity, close proximity and high yield.

  14. Epitaxial Templating of C60 with a Molecular Monolayer.

    PubMed

    Rochford, L A; Jones, T S; Nielsen, C B

    2016-09-01

    Commensurate epitaxial monolayers of truxenone on Cu (111) were employed to template the growth of monolayer and bilayer C60. Through the combination of STM imaging and LEED analysis we have demonstrated that C60 forms a commensurate 8 × 8 overlayer on truxenone/Cu (111). Bilayers of C60 retain the 8 × 8 periodicity of templated monolayers and although Kagome lattice arrangements are observed these are explained with combinations of 8 × 8 symmetry. PMID:27540868

  15. Preferentially etched epitaxial liftoff of InP material

    NASA Technical Reports Server (NTRS)

    Bailey, Sheila G. (Inventor); Wilt, David M. (Inventor); Deangelo, Frank L. (Inventor)

    1995-01-01

    The present invention is directed toward a method of removing epitaxial substrates from host substrates. A sacrificial release layer of ternary material is placed on the substrate. A layer of InP is then placed on the ternary material. Afterward a layer of wax is applied to the InP layer to apply compressive force and an etchant material is used to remove the sacrificial release layer.

  16. Magnetic and magnetotransport properties of erbium silicide epitaxial films

    NASA Astrophysics Data System (ADS)

    Chroboczek, J. A.; Briggs, A.; Joss, W.; Auffret, S.; Pierre, J.

    1991-02-01

    Hexagonal Er3Si5 films epitaxially grown on Si show strong anisotropies in magnetization and magnetotransport below the ordering temperature. The magnetoresistance has a cusplike positive anomaly or is negative and featureless for a magnetic field applied, respectively, along or perpendicular to the [0001] axis. A noncollinear structure, composed of an antiferromagnetic and a ferromagnetic component accounts for the magnetization data. The latter used in conjunction with the Yamada-Takada theory of magnetotransport accounts for the magnetoresistance data.

  17. Martensite transformation of epitaxial Ni-Ti films

    SciTech Connect

    Buschbeck, J.; Kozhanov, A.; Kawasaki, J. K.; James, R. D.; Palmstroem, C. J.

    2011-05-09

    The structure and phase transformations of thin Ni-Ti shape memory alloy films grown by molecular beam epitaxy are investigated for compositions from 43 to 56 at. % Ti. Despite the substrate constraint, temperature dependent x-ray diffraction and resistivity measurements reveal reversible, martensitic phase transformations. The results suggest that these occur by an in-plane shear which does not disturb the lattice coherence at interfaces.

  18. Terahertz and mid-infrared reflectance of epitaxial graphene

    PubMed Central

    Santos, Cristiane N.; Joucken, Frédéric; De Sousa Meneses, Domingos; Echegut, Patrick; Campos-Delgado, Jessica; Louette, Pierre; Raskin, Jean-Pierre; Hackens, Benoit

    2016-01-01

    Graphene has emerged as a promising material for infrared (IR) photodetectors and plasmonics. In this context, wafer scale epitaxial graphene on SiC is of great interest in a variety of applications in optics and nanoelectronics. Here we present IR reflectance spectroscopy of graphene grown epitaxially on the C-face of 6H-SiC over a broad optical range, from terahertz (THz) to mid-infrared (MIR). Contrary to the transmittance, reflectance measurements are not hampered by the transmission window of the substrate, and in particular by the SiC Reststrahlen band in the MIR. This allows us to present IR reflectance data exhibiting a continuous evolution from the regime of intraband to interband charge carrier transitions. A consistent and simultaneous analysis of the contributions from both transitions to the optical response yields precise information on the carrier dynamics and the number of layers. The properties of the graphene layers derived from IR reflection spectroscopy are corroborated by other techniques (micro-Raman and X-ray photoelectron spectroscopies, transport measurements). Moreover, we also present MIR microscopy mapping, showing that spatially-resolved information can be gathered, giving indications on the sample homogeneity. Our work paves the way for a still scarcely explored field of epitaxial graphene-based THz and MIR optical devices. PMID:27102827

  19. Terahertz and mid-infrared reflectance of epitaxial graphene

    NASA Astrophysics Data System (ADS)

    Santos, Cristiane N.; Joucken, Frédéric; de Sousa Meneses, Domingos; Echegut, Patrick; Campos-Delgado, Jessica; Louette, Pierre; Raskin, Jean-Pierre; Hackens, Benoit

    2016-04-01

    Graphene has emerged as a promising material for infrared (IR) photodetectors and plasmonics. In this context, wafer scale epitaxial graphene on SiC is of great interest in a variety of applications in optics and nanoelectronics. Here we present IR reflectance spectroscopy of graphene grown epitaxially on the C-face of 6H-SiC over a broad optical range, from terahertz (THz) to mid-infrared (MIR). Contrary to the transmittance, reflectance measurements are not hampered by the transmission window of the substrate, and in particular by the SiC Reststrahlen band in the MIR. This allows us to present IR reflectance data exhibiting a continuous evolution from the regime of intraband to interband charge carrier transitions. A consistent and simultaneous analysis of the contributions from both transitions to the optical response yields precise information on the carrier dynamics and the number of layers. The properties of the graphene layers derived from IR reflection spectroscopy are corroborated by other techniques (micro-Raman and X-ray photoelectron spectroscopies, transport measurements). Moreover, we also present MIR microscopy mapping, showing that spatially-resolved information can be gathered, giving indications on the sample homogeneity. Our work paves the way for a still scarcely explored field of epitaxial graphene-based THz and MIR optical devices.

  20. Epitaxial Ni/VO2 heterostructures on Si (001)

    NASA Astrophysics Data System (ADS)

    Singamaneni, Srinivasa Rao; Foley, Gabrielle; Prater, John; Narayan, Jay

    VO2 is a strongly correlated oxide, undergoes a first order metal-insulator (MIT) well above the room temperature 340K. Previous works have shown that the stress associated with structural changes across MIT, VO2 can produce significant changes in magnetic properties of over layer ferromagnetic films such as Ni. This control of the magnetic properties could be very important to many technological applications. However, the current use of r-sapphire as substrate can be restrictive in the microelectronics industry. The previous works focused their studies on polycrystalline Ni and VO2 films, which do not allow the precise controlling of the associated properties due to poor reproducibility of polycrystalline films. We have investigated the magnetic and electronic properties of Ni/VO2 films when epitaxially integrated on Si (001) by pulsed laser deposition using domain matching epitaxy paradigm. Ni was grown both in nanoscale islands and layered form. The XRD results showed that the Ni, VO2and YSZ layers were grown epitaxially in single out of plane orientations. We found that the hysteresis in resistance vs. temperature curves in VO2 thin films was retained even when it is in close proximity with the Ni layer which helped confirm that VO2 layer preserves its characteristic features, revealed the fingerprint magnetic features of Ni layer. We will present and discuss our comprehensive experimental findings.

  1. A fabrication technology for epitaxial Ni-Mn-Ga microactuators

    NASA Astrophysics Data System (ADS)

    Khelfaoui, F.; Kohl, M.; Buschbeck, J.; Heczko, O.; Fähler, S.; Schultz, L.

    2008-05-01

    This paper reports on the fabrication and characterization of epitaxial Ni-Mn-Ga microactuators. Ni-Mn-Ga films are grown on heated single-crystalline MgO substrates by DC magnetron sputtering. X-ray diffraction measurements demonstrate epitaxial growth of the films. At room temperature, the crystal structure is identified to be non-modulated (NM) tetragonal martensite. Electrical resistance measurements confirm that the films display the martensitic phase transformation well above the Curie temperature TC of 325 K. Orientation-dependent magnetization measurements are performed to determine magnetic film properties. Micromachining of the Ni-Mn-Ga films is performed on an alumina substrate covered by a temporary adhesive layer. A transfer bonding process is developed to finally integrate the micromachined Ni-Mn-Ga structures to a target substrate in order to obtain NiMnGa microactuators having freely movable microparts. Temperature-displacement characteristics demonstrate the actuation performance of epitaxial NiMnGa microactuators for the first time.

  2. X-ray measurement of magnetoelastic strain in epitaxial Er

    NASA Astrophysics Data System (ADS)

    Durfee, C. S.; Conover, M. J.; Flynn, C. P.

    1997-03-01

    Magnetic transitions are frequently accompanied by magnetoelastic distortions of the crystal lattice. In the case of epitaxially-grown thin magnetic films, however, distortions of the unit cell are potentially restricted by the clamping of the film to the substrate. In thicker epitaxial films (≈ 0.5 μ m), we expect that a film will not be rigidly clamped but will allow dislocations to absorb the lattice mismatch with the substrate. A thick epitaxial magnetic film in this limit offers a system to study dislocation formation and motion in the presence of a tunable field-induced mismatch between film and substrate. For this study, we have prepared strain-free Er films on sapphire by well-known MBE techniques, and have investigated magnetoelastic distortions using x-ray diffraction. X-ray measurements were performed using specially-constructed 40 kOe magnet dewar with x-ray windows. In-plane and perpendicular lattice parameters were measured at several applied magnetic fields, which allow the degree of clamping in the constrained direction to be directly measured. These strains will be discussed in the context of dislocation motion to accommodate lattice mismatch.

  3. Processing and characterization of epitaxial GaAs radiation detectors

    NASA Astrophysics Data System (ADS)

    Wu, X.; Peltola, T.; Arsenovich, T.; Gädda, A.; Härkönen, J.; Junkes, A.; Karadzhinova, A.; Kostamo, P.; Lipsanen, H.; Luukka, P.; Mattila, M.; Nenonen, S.; Riekkinen, T.; Tuominen, E.; Winkler, A.

    2015-10-01

    GaAs devices have relatively high atomic numbers (Z=31, 33) and thus extend the X-ray absorption edge beyond that of Si (Z=14) devices. In this study, radiation detectors were processed on GaAs substrates with 110 - 130 μm thick epitaxial absorption volume. Thick undoped and heavily doped p+ epitaxial layers were grown using a custom-made horizontal Chloride Vapor Phase Epitaxy (CVPE) reactor, the growth rate of which was about 10 μm / h. The GaAs p+/i/n+ detectors were characterized by Capacitance Voltage (CV), Current Voltage (IV), Transient Current Technique (TCT) and Deep Level Transient Spectroscopy (DLTS) measurements. The full depletion voltage (Vfd) of the detectors with 110 μm epi-layer thickness is in the range of 8-15 V and the leakage current density is about 10 nA/cm2. The signal transit time determined by TCT is about 5 ns when the bias voltage is well above the value that produces the peak saturation drift velocity of electrons in GaAs at a given thickness. Numerical simulations with an appropriate defect model agree with the experimental results.

  4. Stability and Rupture of Alloyed Atomic Terraces on Epitaxial Interfaces

    NASA Astrophysics Data System (ADS)

    Michailov, Michail

    The detailed knowledge of the fine atomic structure of epitaxial interface is of fundamental importance for design and fabrication of electronic devices with exotic physical properties. Recently, it has been shown that accounting for diffusion energy barriers at specific sites on the epitaxial interface (atomic terraces, steps, kinks and imperfections), allows fine tuning of the adatom thermal energy which opens up a way for specific nanoscale surface design. Hence, through simple temperature variation, the surface migration of foreign atoms and clusters leads to formation of a variety of alloyed or pure terraces, alloyed islands and alloyed atomic stripes thus forming nanoscale surface patterns. A key role in this scenario plays the density of steps and kinks at the epitaxial interface. On that physical background, in the present paper we discuss the structure, stability and rupture of alloyed terraces as a first step towards the formation of alloyed two-dimensional islands on pure, non-alloyed substrate. The atomistic simulational model reveals a temperature-dependent critical terrace width for rupture and specifies criteria for thermodynamic stability. In the case of incomplete alloying we analyze the competition and overlapping of the elastic strain fields generated by opposite terrace edges. The specific atomic ordering in alloyed islands is also discussed. The simulation results frame the limits of incomplete surface-confined intermixing and point to a path to nanoscale surface design.

  5. Electronic properties of epitaxial silicene on diboride thin films.

    PubMed

    Friedlein, Rainer; Yamada-Takamura, Yukiko

    2015-05-27

    The Si counterpart of graphene—silicene—has partially similar but also unique electronic properties that relate to the presence of an extended π electronic system, the flexible crystal structure and the large spin-orbit coupling. Driven by predictions for exceptional electronic properties like the presence of massless charge carriers, the occurrence of the quantum Hall effect and perfect spin-filtering in free-standing, unreconstructed silicene, the recent experimental realization of largely sp(2)-hybridized, Si honeycomb lattices grown on a number of metallic substrates provided the opportunity for the systematic study of the electronic properties of epitaxial silicene phases. Following a discussion of theoretical predictions for free-standing silicene, we review properties of (√3 × √3)-reconstructed, epitaxial silicene phases but with the emphasis on the extensively studied case of silicene on ZrB2(0 0 0 1) thin films. As the experimental results show, the structural and electronic properties are highly interlinked and leave their fingerprint on the chemical states of individual Si atoms as revealed in core-level photoelectron spectra as well as in the valence electronic structure and low-energy interband transitions. With the critical role of substrates and of the chemical stability of epitaxial silicene highlighted, finally, benefits and challenges for any future silicene-based nanoelectronics are being put into perspective.

  6. Epitaxial film transfer technique for producing single crystal Si film on an insulating substrate

    NASA Astrophysics Data System (ADS)

    Kimura, M.; Egami, K.; Kanamori, M.; Hamaguchi, T.

    1983-08-01

    Epitaxial film transfer, a new technique for producing a single crystal Si film with both large size and high quality on an insulating substrate, is demonstrated. The technique in which an epitaxial Si film is transferred to a secondary substrate by using three fundamental processes of epitaxial growth, bonding of two wafers, and substrate elimination, can produce a 2-in. single crystal Si film as thin as 1.5 μm on a insulating substrate. Thickness variation can be controlled to ±0.06 μm across a 2-in. wafer. An epitaxial Si film is transferred without significant degradation in quality although a fine film waving exists.

  7. Epitaxial orientation of Mg{sub 2}Si(110) thin film on Si(111) substrate

    SciTech Connect

    Wang, Y.; Wang, X. N.; Mei, Z. X.; Du, X. L.; Zou, J.; Jia, J. F.; Xue, Q. K.; Zhang, X. N.; Zhang, Z.

    2007-12-15

    Epitaxial Mg{sub 2}Si(110) thin film has been obtained on Si(111) substrate by thermally enhanced solid-phase reaction of epitaxial Mg film with underlying Si substrate. An epitaxial orientation relationship of Si(111) parallel Mg{sub 2}Si(110) and Si<110> parallel Mg{sub 2}Si<110> has been revealed by transmission electron microscopy. The formation of the unusual epitaxial orientation relationship is attributed to the strain relaxation of Mg{sub 2}Si film in a MgO/Mg{sub 2}Si/Si double heterostructure.

  8. Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process

    DOEpatents

    McKee, Rodney A.; Walker, Frederick J.

    1993-01-01

    A process and structure involving a silicon substrate utilizes an ultra high vacuum and molecular beam epitaxy (MBE) methods to grow an epitaxial oxide film upon a surface of the substrate. As the film is grown, the lattice of the compound formed at the silicon interface becomes stabilized, and a base layer comprised of an oxide having a sodium chloride-type lattice structure grows epitaxially upon the compound so as to cover the substrate surface. A perovskite may then be grown epitaxially upon the base layer to render a product which incorporates silicon, with its electronic capabilities, with a perovskite having technologically-significant properties of its own.

  9. Au impact on GaAs epitaxial growth on GaAs (111){sub B} substrates in molecular beam epitaxy

    SciTech Connect

    Liao, Zhi-Ming; Chen, Zhi-Gang; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Lu, Zhen-Yu; Chen, Ping-Ping; Lu, Wei; Zou, Jin

    2013-02-11

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {l_brace}111{r_brace}{sub B} substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {l_brace}113{r_brace}{sub B} faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  10. Crystal chemistry of the orthorhombic Ln{sub 2}TiO{sub 5} compounds with Ln=La, Pr, Nd, Sm, Gd, Tb and Dy

    SciTech Connect

    Aughterson, Robert D.; Lumpkin, Gregory R.; Thorogood, Gordon J.; Zhang, Zhaoming; Gault, Baptiste; Cairney, Julie M.

    2015-07-15

    The crystal structures of seven samples of orthorhombic (Pnma) Ln{sub 2}TiO{sub 5} compounds with Ln=La, Pr, Nd, Sm, Gd, Tb and Dy were refined by Rietveld analysis of synchrotron X-ray powder diffraction (S-XRD) data. With increasing size of the lanthanide cation, the lattice parameters increase systematically: c by only ~1.5% whereas both a and b by ~6% from Dy{sub 2}TiO{sub 5} to La{sub 2}TiO{sub 5}. The mean Ti–O bond length only increases by ~1% with increasing radius of the Ln cation from Gd to La, primarily due to expansion of the pair of Ti–O{sub 3} bonds to opposite corners of the Ti–O{sub 5} square based pyramid polyhedra. For Dy{sub 2}TiO{sub 5} and Tb{sub 2}TiO{sub 5}, a significant variation in Ti–O{sub 1} and Ti–O{sub 4} bond lengths results in an increased deformation of the Ti–O{sub 5} base. The particular configuration consists of large rhombic shaped tunnels and smaller triangular tunnels along the b axis, which have implications for defect formation and migration caused by radiation damage or the ionic conductivity. - Graphical abstract: Figure: The crystallographic study of a systematic series of compounds with nominal stoichiometry Ln{sub 2}TiO{sub 5} (with Ln representing La, Pr, Nd, Sm, Gd, Tb and Dy) and orthorhombic, Pnma, symmetry shows changes in cell parameters which fit a linear trend. However, bond lengths are shown to deviate from trend with compounds containing the smaller, heavier lanthanides. - Highlights: • First fabrication and crystallographic refinement of compound Pr{sub 2}TiO{sub 5}. • First systematic study of the crystallography, using S-XRD, for Ln{sub 2}TiO{sub 5} series. • Cation to anion bonding trends and valence states are investigated. • The densities and band-gaps of the series are experimentally determined.

  11. Raman spectra of epitaxial graphene on SiC and of epitaxial graphene transferred to SiO2.

    PubMed

    Lee, Dong Su; Riedl, Christian; Krauss, Benjamin; von Klitzing, Klaus; Starke, Ulrich; Smet, Jurgen H

    2008-12-01

    Raman spectra were measured for mono-, bi-, and trilayer graphene grown on SiC by solid state graphitization, whereby the number of layers was preassigned by angle-resolved ultraviolet photoemission spectroscopy. It was found that the only unambiguous fingerprint in Raman spectroscopy to identify the number of layers for graphene on SiC(0001) is the line width of the 2D (or D*) peak. The Raman spectra of epitaxial graphene show significant differences as compared to micromechanically cleaved graphene obtained from highly oriented pyrolytic graphite crystals. The G peak is found to be blue-shifted. The 2D peak does not exhibit any obvious shoulder structures, but it is much broader and almost resembles a single-peak even for multilayers. Flakes of epitaxial graphene were transferred from SiC onto SiO2 for further Raman studies. A comparison of the Raman data obtained for graphene on SiC with data for epitaxial graphene transferred to SiO2 reveals that the G peak blue-shift is clearly due to the SiC substrate. The broadened 2D peak however stems from the graphene structure itself and not from the substrate.

  12. Effect of growth temperature on defects in epitaxial GaN film grown by plasma assisted molecular beam epitaxy

    SciTech Connect

    Kushvaha, S. S. Pal, P.; Shukla, A. K.; Joshi, Amish G.; Gupta, Govind; Kumar, M.; Singh, S.; Gupta, Bipin K.; Haranath, D.

    2014-02-15

    We report the effect of growth temperature on defect states of GaN epitaxial layers grown on 3.5 μm thick GaN epi-layer on sapphire (0001) substrates using plasma assisted molecular beam epitaxy. The GaN samples grown at three different substrate temperatures at 730, 740 and 750 °C were characterized using atomic force microscopy and photoluminescence spectroscopy. The atomic force microscopy images of these samples show the presence of small surface and large hexagonal pits on the GaN film surfaces. The surface defect density of high temperature grown sample is smaller (4.0 × 10{sup 8} cm{sup −2} at 750 °C) than that of the low temperature grown sample (1.1 × 10{sup 9} cm{sup −2} at 730 °C). A correlation between growth temperature and concentration of deep centre defect states from photoluminescence spectra is also presented. The GaN film grown at 750 °C exhibits the lowest defect concentration which confirms that the growth temperature strongly influences the surface morphology and affects the optical properties of the GaN epitaxial films.

  13. Structure and magnetic properties of epitaxial terbium- iron thin films

    NASA Astrophysics Data System (ADS)

    Wang, Chuei-Tang

    TbFe2 is a giant magnetostrictive material which has the largest known room temperature magnetostriction constant. The large magnetostriction constant suggests that we can manipulate the magnetic anisotropy of the material using small strains. Other research groups have grown amorphous and polycrystalline TbFe2 films; however, these films lose giant mangetostriction because of diordered atomic structure in the amorphous films and random grain orientation in the polycrystalline films. Single-crystal structure is needed to achieve the large magnetostriction, so epitaxial growth of TbFe2 thin films is necessary. The goal of this research is to grow epitaxial TbFe2 films and study the effect of film strain on magnetic anisotropy. A technique was developed to grow epitaxial TbFe2films using DC magnetron sputtering. The films were grown in a UHV system using elemental Tb and Fe sputtering targets and single-crystal Al2O3, MgO, and CaF2 substrates. (110) -oriented Mo, W, and Nb were used as buffer layers to provide the base for epitaxial growth and to prevent chemical reactions between the TbFe2 films and the substrates. On the Mo and W buffer layers the TbFe2 film is (111) -oriented but on the Nb buffer layer it is (110) -oriented. Preliminary calculation of magnetostrictive anisotropy in TbFe2(111) films predicts that compressive strain greater than 0.5% will induce perpendicular magnetization while tensile strain greater than 0.5% will induce an in- plane magnetization. Epitaxial growth on CaF2 provides compressive thermal strain of 0.51%, and SQUID measurements confirmed that these samples did have perpendicular magnetization. On the other hand, Al2O3 provides tensile thermal strain of 0.56%, and SQUID measurements showed the films on Al2O3 were in-plane. The values of strain on these three substrates were determined by strain measurement from synchrotron radiation. X-ray epitaxial quality measurements revealed a new orientation relationship, R30o, at the TbFe2

  14. Theoretical investigation of the electronic and magnetic properties of the orthorhombic phase of Ba (Fe1 -xCox)2As2

    NASA Astrophysics Data System (ADS)

    Derondeau, Gerald; Polesya, Svitlana; Mankovsky, Sergiy; Ebert, Hubert; Minár, Ján

    2014-11-01

    We present a comprehensive study on the low-temperature orthorhombic phase of Ba (Fe1-xCox) 2As2 based on the Korringa-Kohn-Rostoker-Green function approach. Using this band-structure method in combination with the coherent potential approximation alloy theory we are able to investigate the evolution of the magnetic and electronic properties of this prototype iron pnictide for arbitrary concentrations x , while dealing with the chemical disorder without uncontrolled simplifications by using solely a rigid-band shift or the virtual crystal approximation. We discuss the development of the site-resolved magnetic moments for the experimentally observed stripe antiferromagnetic order together with the strong electronic anisotropy of the Fermi surface and compare it with angle-resolved photoemission spectroscopy measurements of detwinned crystals. We furthermore calculate magnetic exchange coupling parameters Ji j and use them for Monte Carlo simulations on the basis of the classical Heisenberg model to get an insight on the temperature dependence of the magnetic ordering on the cobalt concentration.

  15. Investigations on the local structures and spin Hamiltonian parameters for the orthorhombic Rh2+ centers R4 and R5 in AgCl microcrystals

    NASA Astrophysics Data System (ADS)

    Hu, Xian-Fen; Wu, Shao-Yi; Li, Guo-Liang; Ding, Chang-Chun; Zhang, Li-Juan

    2016-06-01

    The local structures and spin Hamiltonian parameters (SHPs, g factors, hyperfine structure constants and superhyperfine parameters) are theoretically investigated for the two orthorhombic Rh2+centers R4 and R5 in AgCl microcrystals. Center R4 is ascribed to the impurity Rh2+substituted for Ag+ with two H2O molecules substituted for the nearest neighbor ligands Cl- along the [100] and [010] axes, each with one next nearest neighbor Ag+ vacancy (VAg) due to charge compensation. The impurity Rh2+is found to experience a small off-center displacement 0.006 Å along the [ 1 bar 1 bar 0 ] axis because of the electrostatic interactions of the substitutes and the VAg. Center R5 is attributed to the impurity Rh2+substituted for Ag+ associated with one H2O molecule substituted for the nearest neighbor ligand Cl- along the [100] axis and one next nearest VAg along the [010] axis. Due to the effective positive charge of the substitute, Rh2+ is repulsed away from the substitute by about 0.008 Å along the [ 1 bar 00 ] axis, while the intervening ligand Cl- in Rh2+and VAg suffers a small inward displacement 0.010 Å towards the center of octahedron. The calculated SHPs based on the above local structures show good agreement with the experimental data for both centers.

  16. Ferroelectric ordering and magnetoelectric effect of pristine and Ho-doped orthorhombic DyMnO{sub 3} by dielectric studies

    SciTech Connect

    Magesh, J.; Murugavel, P.; Mangalam, R. V. K.; Singh, K.; Simon, Ch.; Prellier, W.

    2015-08-21

    In this paper, the magnetoelectric coupling and ferroelectric ordering of the orthorhombic Dy{sub 1-x}Ho{sub x}MnO{sub 3} (x = 0 and 0.1) are studied from the magnetodielectric response of the polycrystalline samples. The dielectric study on the DyMnO{sub 3} reveals ferroelectric transition at 18 K along with an addition transition at 12 K. We suggest that the transition at 12 K could have originated from the polarization flop rather than being the rare earth magnetic ordering. The magnetodielectric study reveals a magnetoelectric coupling strength of 10%, which is stronger by two orders of magnitude in comparison to the hexagonal manganites. Surprisingly, the Ho{sup 3+} substitution in DyMnO{sub 3} suppresses the magnetoelectric coupling strength via the suppression of the spiral magnetic ordering. In addition, it also reduces the antiferromagnetic ordering and ferroelectric ordering temperatures. Overall, the studies show that the rare earth plays an important role in the magnetoelectric coupling strength through the modulation of spiral magnetic structure.

  17. Theoretical investigations on the defect structures and spin Hamiltonian parameters for various orthorhombic Rh2+ centres in KTiOPO4 and KTiOAsO4

    NASA Astrophysics Data System (ADS)

    Ding, Chang-Chun; Wu, Shao-Yi; Zhang, Li-Juan; Li, Guo-Liang; Zhang, Zhi-Hong

    2015-12-01

    The defect structures and spin Hamiltonian parameters (SHPs) for three Rh2+ centres (denoted C1 in KTiOAsO4 and C2 and C3 in KTiOPO4) are theoretically investigated by utilising the perturbation formulae for a 4d7 ion under orthorhombically (D2h) elongated octahedra. The defect structures are characterized by the axial elongation ratios of 4.91%, 4.93% and 4.90% along the Z axis and the planar bond length variation ratios of 0.05%, 0.01% and 0.04% for centres C1, C2 and C3, respectively, owing to the Jahn-Teller effect. The nearly identical moderate axial elongation ratios and the slightly different tiny planar bond length variation ratios may suitably account for the comparable moderate axial g anisotropies ∆g (≈0.6087, 0.6124 and 0.6067) and the slightly dissimilar tiny perpendicular g anisotropies δg (≈0.0649, 0.0097 and 0.0509) of the three centres, respectively. All centres demonstrate similar strong crystal-field interactions and moderate covalence arising from the comparable short impurity-ligand distances.

  18. Crystal chemistry of the orthorhombic Ln2TiO5 compounds with Ln=La, Pr, Nd, Sm, Gd, Tb and Dy

    NASA Astrophysics Data System (ADS)

    Aughterson, Robert D.; Lumpkin, Gregory R.; Thorogood, Gordon J.; Zhang, Zhaoming; Gault, Baptiste; Cairney, Julie M.

    2015-07-01

    The crystal structures of seven samples of orthorhombic (Pnma) Ln2TiO5 compounds with Ln=La, Pr, Nd, Sm, Gd, Tb and Dy were refined by Rietveld analysis of synchrotron X-ray powder diffraction (S-XRD) data. With increasing size of the lanthanide cation, the lattice parameters increase systematically: c by only ~1.5% whereas both a and b by ~6% from Dy2TiO5 to La2TiO5. The mean Ti-O bond length only increases by ~1% with increasing radius of the Ln cation from Gd to La, primarily due to expansion of the pair of Ti-O3 bonds to opposite corners of the Ti-O5 square based pyramid polyhedra. For Dy2TiO5 and Tb2TiO5, a significant variation in Ti-O1 and Ti-O4 bond lengths results in an increased deformation of the Ti-O5 base. The particular configuration consists of large rhombic shaped tunnels and smaller triangular tunnels along the b axis, which have implications for defect formation and migration caused by radiation damage or the ionic conductivity.

  19. Density functional theory insights into the structural stability and Li diffusion properties of monoclinic and orthorhombic Li2FeSiO4 cathodes

    NASA Astrophysics Data System (ADS)

    Lu, Xia; Chiu, Hsien-Chieh; Bevan, Kirk H.; Jiang, De-Tong; Zaghib, Karim; Demopoulos, George P.

    2016-06-01

    Lithium iron orthosilicate (Li2FeSiO4) is an important alternative cathode for next generation Li-ion batteries due to its high theoretical capacity (330 mA h/g). However, its development has faced great challenges arising from significant structural complexity, including the disordered arrangement/orientation of Fe/Si tetrahedra, polytypes and its poorly understood Li storage and transport properties. In this context, ab-initio calculations are employed to investigate the phase stability and Li diffusion profiles of both monoclinic (P21) and orthorhombic (Pmn21) Li2FeSiO4 orthosilicates. The calculations demonstrate that formation of Lisbnd Fe antisites can induce a metastability competition between both phases, with neither dominating across nearly the entire discharging profile from Li2FeSiO4 through to LiFeSiO4. Furthermore, structural instability is shown to be a serious concern at discharge concentrations below LiFeSiO4 (1 Li extraction) due to the shared occupation of Li donated electrons with oxygen 2p orbitals - rather than the hypothesized transition to a tetravalent Fe4+ state. This finding is further supported by diffusion calculations that have determined a high activation energy barrier towards fast charging and rapid phase transitions. In summary, these theoretical results provide critical and timely insight into the structural dynamics of lithium iron orthosilicate, in pursuit of high energy density cathodes.

  20. Structure-property relations of orthorhombic [(CH3)3NCH2COO]2(CuCl2)3 · 2H2 O

    NASA Astrophysics Data System (ADS)

    Haussühl, Eiken; Schreuer, Jürgen; Wiehl, Leonore; Paulsen, Natalia

    2014-04-01

    Large single crystals of orthorhombic [(CH3)3NCH2COO]2(CuCl2)3 · 2H2 O with dimensions up to 40×40×30 mm3 were grown from aqueous solutions. The elastic and piezoelastic coefficients were derived from ultrasonic resonance frequencies and their shifts upon variation of pressure, respectively, using the plate-resonance technique. Additionally, the coefficients of thermal expansion were determined between 95 K and 305 K by dilatometry. The elastic behaviour at ambient conditions is dominated by the 2-dimensional network of strong hydrogen bonds within the (001) plane leading to a corresponding pseudo-tetragonal anisotropy of the longitudinal elastic stiffness. The variation of elastic properties with pressure, however, as well as the thermal expansion shows strong deviations from the pseudo-tetragonal symmetry. These deviations are probably correlated with tilts of the elongated tri-nuclear betaine-CuCl2-water complexes. Neither the thermal expansion nor the specific heat capacity gives any hint on a phase transition in the investigated temperature range.

  1. Luminescence of Bi3+ in the orthorhombic perovskites CaB4+O3 (B4+=Zr, sn): Crossover from localized to D-state emission

    NASA Astrophysics Data System (ADS)

    Srivastava, Alok M.

    2016-08-01

    The optical properties of Bi3+ in the orthorhombic perovskites CaZrO3 and CaSnO3 are investigated. The Stokes shift of Bi3+ emission in CaZrO3 is small (∼0.80 eV) with the peak wavelength of the emission band occurring in the ultraviolet. This emission is attributed to the localized 3P0,1 → 1S0 optical transition. In contrast, the Stokes shift of the Bi3+ emission in CaSnO3 is large (>1 eV) with the emission band peaking in the visible. The emission band is also considerably broadened in CaSnO3. It is claimed that Bi3+ luminescence in CaSnO3 corresponds with the Bi3+ (6s2) -Sn4+ (5s°) charge transfer emission (D-state emission). The energy of the 1S0→3P1 (A-band) excitation band in both perovskites are very nearly the same. Physical reasoning is advanced for the occurrence and lack thereof of the D-state emission in these perovskites.

  2. Structural, elastic and thermodynamic properties of tetragonal and orthorhombic polymorphs of Sr2GeN2: an ab initio investigation

    NASA Astrophysics Data System (ADS)

    Bedjaoui, A.; Bouhemadou, A.; Bin-Omran, S.

    2016-04-01

    The structural, elastic and thermodynamic properties of the α (tetragonal) and β (orthorhombic) polymorphs of the Sr2GeN2 compound have been examined in detail using ab initio density functional theory pseudopotential plane-wave calculations. Apart the structural properties at the ambient conditions, all present reported results are predicted for the first time. The calculated equilibrium lattice parameters and inter-atomic bond-lengths of the considered polymorphs are in good agreement with the available experimental data. It is found that α-Sr2GeN2 is energetically more stable than β-Sr2GeN2. The two examined polymorphs are very similar in their crystal structures and have almost identical local environments. The single-crystal and polycrystalline elastic parameters and related properties - including elastic constants, bulk, shear and Young's moduli, Poisson's ratio, anisotropy indexes, Pugh's criterion, elastic wave velocities and Debye temperature - have been predicted. Temperature and pressure dependence of some macroscopic properties - including the unit-cell volume, bulk modulus, volume thermal expansion coefficient, heat capacity and Debye temperature - have been evaluated using ab initio calculations combined with the quasi-harmonic Debye model.

  3. Orthorhombic Na[sub x]MnO[sub 2] as a cathode material for secondary sodium and lithium polymer batteries

    SciTech Connect

    Doeff, M.M.; Peng, M.Y.; Ma, Y.; Jonghe, L.C. de . Materials Sciences Div.)

    1994-11-01

    The use of orthorhombic Na[sub x]MnO[sub 2] as a cathode material for alkali metal polymer electrolyte batteries is described for the first time. This sodium manganese bronze has a tunnel structure and can reversibly intercalate up to 0.55 to 0.6 alkali metal ions (Li[sup +] or Na[sup +]) per manganese at moderate current densities, corresponding to capacities of 160 to 180 mAh/g. Li/PEO/Na[sub 0.2]Li[sub x]MnO[sub 2] cells [PEO = poly(ethylene oxide)] to date have been cycled over ninety times at 0.1 mA/cm[sup 2], with excellent capacity retention. Na/PEO/Na[sub x]MnO[sub 2] and Na[sub x]MnO[sub 2]/PEO/Na[sub x]MnO[sub 2] cells have been cycled over sixty times to date at the same rate, showing moderate capacity fading.

  4. An investigation of the stable orientations of orthorhombic particles in a thin film and their effect on its critical failure pressure.

    PubMed

    Morris, G; Neethling, S J; Cilliers, J J

    2011-09-01

    The effects of shape and contact angle on the behaviour of orthorhombic particles at an interface and in thin films were investigated using Surface Evolver. It is shown that the energetically stable orientations of the particle change with its aspect ratio. Long, wide, flat particles with low contact angles are more stable in flat orientations, i.e. with two faces parallel to the flat film surface. More cubic particles with higher contact angles are more stable in twisted orientations, where the opposite sides of the film can be drawn together at the sharp edges of the particle. The combination of contact angle and orientation has been found to have a large effect on the capillary pressure required to rupture the film. A film containing a particle in a flat orientation will rupture at a capillary pressure up to three times greater than one containing an identical particle in a twisted orientation. Wider, flatter particles with low contact angles stabilise thin liquid films to a greater extent than cubic particles with high contact angles.

  5. Defect structure of semiconducting and insulating epitaxial oxides. Progress report, May 1, 1993--April 30, 1994

    SciTech Connect

    Wessels, B.W.

    1994-03-01

    The investigation has focused on epitaxial growth of BaSrTiO{sub 3} over the entire solid solution range, point defects in epitaxial BaTiO{sub 3} using temperature-dependent conductivity and deep-level optical spectroscopy, and their nonlinear optical properties.

  6. Epitaxy and fiber texture of Pb films on mica and glass.

    NASA Technical Reports Server (NTRS)

    Wyatt, P. W.; Yelon, A.

    1972-01-01

    We report the production of (111) epitaxial Pb films on mica and (111) textured Pb films on mica and glass. Film structure is studied by reflection electron diffraction and by etching and optical microscopy. Thin (about 1000 A) epitaxial films are found to be doubly positioned. Reorientation during growth of thicker films leads to single positioning in areas several tenths of a millimeter across.

  7. Growth of (111) GaAs on (111) Si using molecular-beam epitaxy

    NASA Technical Reports Server (NTRS)

    Radhakrishnan, G.; Liu, J.; Grunthaner, F.; Katz, J.; Morkoc, H.

    1988-01-01

    (111) GaAs layers have been grown epitaxially on (111) Si wafers, both on-axis as well as 3-deg off-axis towards the 1 -1 0 direction, using molecular-beam epitaxy. The grown layers have been characterized by scanning electron microscopy, X-ray diffraction, and transmission electron microscopy.

  8. Epitaxial ternary nitride thin films prepared by a chemical solution method

    SciTech Connect

    Luo, Hongmei; Feldmann, David M; Wang, Haiyan; Bi, Zhenxing

    2008-01-01

    It is indispensable to use thin films for many technological applications. This is the first report of epitaxial growth of ternary nitride AMN2 films. Epitaxial tetragonal SrTiN2 films have been successfully prepared by a chemical solution approach, polymer-assisted deposition. The structural, electrical, and optical properties of the films are also investigated.

  9. Evaluation and verification of epitaxial process sequence for silicon solar cell production

    NASA Technical Reports Server (NTRS)

    Redfield, D.

    1981-01-01

    The applicability of solar cell and module processing sequences, to be used on lower cost epitaxial silicon wafers was evaluated. The extent to which the process sequences perform effectively when applied to film solar cells formed by epitaxial deposition of Si on potentially inexpensive substrates of upgraded metallurgical grade Si is examined. It is concluded that these substrates are satisfactory in their cell performance.

  10. Electrical properties of solid-solution SrZrxTi1-xO3 grown epitaxially on Ge by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Moghadam, Reza; Ahmadi, Kamyar; Xiao, Z.-Y.; Hong, Xia; Ngai, Joseph

    The epitaxial growth of crystalline oxides on semiconductors enables new functionalities to be introduced to semiconductor devices. In particular, dielectric and ferroelectric oxides grown epitaxially on semiconductors provide a pathway to realize ultra-low power logic and memory devices. Here we present electrical characterization of solid-solution SrZrxTi1-xO3 grown epitaxially on Ge through oxide molecular beam epitaxy. SrZrxTi1-xO3 is of particular interest since the band offset with respect to the semiconductor can be tuned through Zr content x. We will present current-voltage, capacitance-voltage and piezoforce microscopy characterization of SrZrxTi1-xO3 -Ge heterojunctions. In particular, we will discuss how the electrical characteristics of SrZrxTi1-xO3 -Ge heterojunctions evolve with respect to composition, annealing and film thickness.

  11. Improved radiation tolerance of MAPS using a depleted epitaxial layer

    NASA Astrophysics Data System (ADS)

    Dorokhov, A.; Bertolone, G.; Baudot, J.; Brogna, A. S.; Colledani, C.; Claus, G.; De Masi, R.; Deveaux, M.; Dozière, G.; Dulinski, W.; Fontaine, J.-C.; Goffe, M.; Himmi, A.; Hu-Guo, Ch.; Jaaskelainen, K.; Koziel, M.; Morel, F.; Santos, C.; Specht, M.; Valin, I.; Voutsinas, G.; Wagner, F. M.; Winter, M.

    2010-12-01

    Tracking performance of Monolithic Active Pixel Sensors (MAPS) developed at IPHC (Turchetta, et al., 2001) [1] have been extensively studied (Winter, et al., 2001; Gornushkin, et al., 2002) [2,3]. Numerous sensor prototypes, called MIMOSA, were fabricated and tested since 1999 in order to optimise the charge collection efficiency and power dissipation, to minimise the noise and to increase the readout speed. The radiation tolerance was also investigated. The highest fluence tolerable for a 10 μm pitch device was found to be ˜1013 neq/cm2, while it was only 2×1012 neq/cm2 for a 20 μm pitch device. The purpose of this paper is to show that the tolerance to non-ionising radiation may be extended up to O(10 14) n eq/cm 2. This goal relies on a fabrication process featuring a 15 μm thin, high resistivity ( ˜1 kΩ cm) epitaxial layer. A sensor prototype (MIMOSA-25) was fabricated in this process to explore its detection performance. The depletion depth of the epitaxial layer at standard CMOS voltages ( <5 V) is similar to the layer thickness. Measurements with m.i.p.s show that the charge collected in the seed pixel is at least twice larger for the depleted epitaxial layer than for the undepleted one, translating into a signal-to-noise ratio (SNR) of ˜50. Tests after irradiation have shown that this excellent performance is maintained up to the highest fluence considered ( 3×1013 neq/cm2), making evidence of a significant extension of the radiation tolerance limits of MAPS. Standing for minimum ionising particle.

  12. Chemical beam epitaxy for high efficiency photovoltaic devices

    NASA Technical Reports Server (NTRS)

    Bensaoula, A.; Freundlich, A.; Vilela, M. F.; Medelci, N.; Renaud, P.

    1994-01-01

    InP-based multijunction tandem solar cells show great promise for the conversion efficiency (eta) and high radiation resistance. InP and its related ternary and quanternary compound semiconductors such as InGaAs and InGaAsP offer desirable combinations for energy bandgap values which are very suitable for multijunction tandem solar cell applications. The monolithically integrated InP/In(0.53)Ga(0.47)As tandem solar cells are expected to reach efficiencies above 30 percent. Wanlass, et.al., have reported AMO efficiencies as high as 20.1% for two terminal cells fabricated using atmospheric-pressure metalorganic vapor phase epitaxy (APMOVPE). The main limitations in their technique are first related to the degradation of the intercell ohmic contact (IOC), in this case the In(0.53)Ga(0.47)As tunnel junction during the growth of the top InP subcell structure, and second to the current matching, often limited by the In(0.53)Ga(0.47)As bottom subcell. Chemical beam epitaxy (CBE) has been shown to allow the growth of high quality materials with reproducible complex compositional and doping profiles. The main advantage of CBE compared to metalorganic chemical vapor deposition (MOCVD), the most popular technique for InP-based photovoltaic device fabrication, is the ability to grow high purity epilayers at much lower temperatures (450 C - 530 C). In a recent report it was shown that cost-wise CBE is a breakthrough technology for photovoltaic (PV) solar energy progress in the energy conversion efficiency of InP-based solar cells fabricated using chemical beam epitaxy. This communication summarizes our recent results on PV devices and demonstrates the strength of this new technology.

  13. Low-temperature plasma-deposited silicon epitaxial films: Growth and properties

    SciTech Connect

    Demaurex, Bénédicte; Bartlome, Richard; Seif, Johannes P.; Geissbühler, Jonas; Alexander, Duncan T. L.; Jeangros, Quentin; Ballif, Christophe; De Wolf, Stefaan

    2014-08-05

    Low-temperature (≤ 180 °C) epitaxial growth yields precise thickness, doping, and thermal-budget control, which enables advanced-design semiconductor devices. In this paper, we use plasma-ehanced chemical vapor deposition to grow homo-epitaxial layers and study the different growth modes on crystalline silicon substrates. In particular, we determine the conditions leading to epitaxial growth in light of a model that depends only on the silane concentration in the plasma and the mean free path length of surface adatoms. For such growth, we show that the presence of a persistent defective interface layer between the crystalline silicon substrate and the epitaxial layer stems not only from the growth conditions but also from unintentional contamination of the reactor. As a result of our findings, we determine the plasma conditions to grow high-quality bulk epitaxial films and propose a two-step growth process to obtain device-grade material.

  14. Epitaxial growth of vertically free-standing ultra-thin silicon nanowires.

    PubMed

    Zhou, Qingwei; Liu, Liwei; Gao, Xingsen; Chen, Lijun; Senz, Stephan; Zhang, Zhang; Liu, Junming

    2015-02-20

    We report epitaxial growth of ultra-thin vertically free-standing silicon nanowires (Si NWs) on Si(111) and Si(110) substrate, by an ultra-high vacuum chemical vapor deposition method. The epitaxial growth direction of Si NWs with sub-10 nm diameters was found to be dependent upon the orientation type of the Si substrate. The 〈112〉 and 〈110〉 epitaxial growth directions are crystallographically preferred on Si(111) and Si(110) substrates, respectively. Especially, for the epitaxy on Si(110), most of the Si NWs are grown vertically in the [110] direction with sub-5 nm diameters. Based on transmission electron microscope investigations, a growth model for ultra-thin Si NWs was deduced from the morphology of interface between catalyst and nanowire, and the growth direction at a very early stage of epitaxy was determined.

  15. Epitaxial growth of MgB2 films at ambient temperature

    NASA Astrophysics Data System (ADS)

    Shishido, Hiroaki; Yoshida, Takuya; Nakagami, Takatoshi; Ishida, Takekazu

    We grew crystalline MgB2 thin films using molecular beam epitaxy at a low substrate temperature of 110 °C under an ultrahigh vacuum of about 10-6 Pa. MgB2 thin films were deposited on the (001) surface of a 4H-SiC substrate with an epitaxial Mg buffer layer. The epitaxial growth was confirmed by X-ray diffraction measurements. MgB2 thin films show a sharp superconducting transition at 27.2 K, with a relatively narrow superconducting transition width ΔTc = 0.9 K. The growth temperature was lower than any in prior reports on superconducting MgB2 thin films. The presence of the epitaxial Mg buffer layer is crucial for reducing the epitaxial temperature.

  16. Structure and magnetism of epitaxial rare-earth-transition-metal films

    SciTech Connect

    Fullerton, E.E.; Sowers, C.H.; Pearson, J.P.; Bader, S.D.

    1996-10-01

    Growth of epitaxial transition-metal superlattices; has proven essential in elucidating the role of crystal orientation and structure on magnetic properties such as giant magnetoresistance, interlayer coupling, and magnetic surface anisotropies. Extending these studies to the growth of epitaxial rare earth-transition metal (RE-TM) films and superlattices promises to play an equally important role in exploring and optimizing the properties of hard magnets. For instance, Skomski and Coey predict that a giant energy product (120 MG Oe) is possible in multilayer structures consisting of aligned hard-magnet layers exchanged coupled with soft-phase layers with high magnetization. Epitaxy provides one route to synthesizing such exchange-hardened magnets on controlled length scales. Epitaxial growth also allows the magnetic properties to be tailored by controlling the crystal orientation and the anisotropies of the magnetic layers and holds the possibility of stabilizing metastable phases. This paper describes the epitaxy and magnetic properties for several alloys.

  17. Distribution of the surface potential of epitaxial HgCdTe

    SciTech Connect

    Novikov, V. A. Grigoryev, D. V.; Bezrodnyy, D. A.; Dvoretsky, S. A.

    2014-09-08

    We studied the distribution of surface potential of the Hg{sub 1−x}Cd{sub x}Te epitaxial films grown by molecular beam epitaxy. The studies showed that the variation of the spatial distribution of surface potential in the region of the V-defect can be related to the variation of the material composition of epitaxial film. The V-defect is characterized by increased of Hg content with respect to the composition of the solid solution of Hg{sub 1−x}Cd{sub x}Te epitaxial film. In this paper, it was demonstrated that the unformed V-defects can be observed together with the macroscopic V-defects on the epitaxial film surface. These unformed V-defects can allow the creation of a complex surface potential distribution profile due to the redistribution of the solid solution composition.

  18. Low-temperature plasma-deposited silicon epitaxial films: Growth and properties

    SciTech Connect

    Demaurex, Bénédicte Bartlome, Richard; Seif, Johannes P.; Geissbühler, Jonas; Ballif, Christophe; De Wolf, Stefaan; Alexander, Duncan T. L.; Jeangros, Quentin

    2014-08-07

    Low-temperature (≤200 °C) epitaxial growth yields precise thickness, doping, and thermal-budget control, which enables advanced-design semiconductor devices. In this paper, we use plasma-enhanced chemical vapor deposition to grow homo-epitaxial layers and study the different growth modes on crystalline silicon substrates. In particular, we determine the conditions leading to epitaxial growth in light of a model that depends only on the silane concentration in the plasma and the mean free path length of surface adatoms. For such growth, we show that the presence of a persistent defective interface layer between the crystalline silicon substrate and the epitaxial layer stems not only from the growth conditions but also from unintentional contamination of the reactor. Based on our findings, we determine the plasma conditions to grow high-quality bulk epitaxial films and propose a two-step growth process to obtain device-grade material.

  19. Influence of the cluster orientation on the epitaxy: deposition of Co nanoclusters on Cu(001) surfaces.

    PubMed

    Jiménez-Sáez, J C; Ettaoussi, M S; Pérez-Martín, A M C; Kerkeb, M L; Jiménez-Rodríguez, J J

    2010-02-01

    Deposition at low energy of 147-atom icosahedral Co nanoclusters on Cu(001) substrates is studied by molecular-dynamics simulations. Atomic interactions were mimicked by a many-body potential based on the tight-binding second-moment approximation. Clusters were rotated by using the two first Euler angles, in the so-called "x-convention," and subsequently, they were deposited on the substrate. The dependence of the degree of epitaxy on these angles has been obtained. Epitaxy is also related to the initial number of (001)-oriented atoms, especially for extreme values of this latter quantity. A better epitaxial matching is connected with a larger spreading index. The explanation of the epitaxial behavior of the supported clusters resides mainly in the dynamical interaction between grains during approximately the first 40 ps. Whenever the newly-formed (001)-oriented grain competes against a large number of grains after the collision, a very low epitaxial matching is obtained.

  20. Dependence of the concentration of ionized donors on epitaxy temperature for Si:Er/Si layers grown by sublimation molecular-beam epitaxy

    SciTech Connect

    Kuznetsov, V. P.; Shmagin, V. B.; Drozdov, M. N.; Marychev, M. O.; Kudryavtsev, K. E.; Kuznetsov, M. V.; Andreev, B. A.; Kornaukhov, A. V.; Krasilnik, Z. F.

    2011-01-15

    The dependence of the concentrations of the Er impurity and ionized donors on the epitaxy temperature has been studied before and after annealing of Si:Er/Si layers grown by sublimation molecular-beam epitaxy. n-Si:Er layers have been grown in the temperature range 400-800 Degree-Sign C and annealed in hydrogen atmosphere at a temperature of 800 Degree-Sign C for 30 min. The possible nature of the donor centers is discussed.

  1. Ferroelectric switching in epitaxial GeTe films

    SciTech Connect

    Kolobov, A. V. Fons, P.; Tominaga, J.; Kim, D. J.; Gruverman, A.; Giussani, A.; Calarco, R.

    2014-06-01

    In this paper, using a resonance-enhanced piezoresponse force microscopy approach supported by density functional theory computer simulations, we have demonstrated the ferroelectric switching in epitaxial GeTe films. It has been shown that in films with thickness on the order of several nanometers reversible reorientation of polarization occurs due to swapping of the shorter and longer Ge-Te bonds in the interior of the material. It is also hinted that for ultra thin films consisting of just several atomic layers weakly bonded to the substrate, ferroelectric switching may proceed through exchange of Ge and Te planes within individual GeTe layers.

  2. Low contact resistance in epitaxial graphene devices for quantum metrology

    SciTech Connect

    Yager, Tom E-mail: ywpark@snu.ac.kr; Lartsev, Arseniy; Lara-Avila, Samuel; Kubatkin, Sergey; Cedergren, Karin; Yakimova, Rositsa; Panchal, Vishal; Kazakova, Olga; Tzalenchuk, Alexander; Kim, Kyung Ho; Park, Yung Woo E-mail: ywpark@snu.ac.kr

    2015-08-15

    We investigate Ti/Au contacts to monolayer epitaxial graphene on SiC (0001) for applications in quantum resistance metrology. Using three-terminal measurements in the quantum Hall regime we observed variations in contact resistances ranging from a minimal value of 0.6 Ω up to 11 kΩ. We identify a major source of high-resistance contacts to be due bilayer graphene interruptions to the quantum Hall current, whilst discarding the effects of interface cleanliness and contact geometry for our fabricated devices. Moreover, we experimentally demonstrate methods to improve the reproducibility of low resistance contacts (<10 Ω) suitable for high precision quantum resistance metrology.

  3. Van der Waals Epitaxy of Functional Oxide Heterostructures

    NASA Astrophysics Data System (ADS)

    Chu, Ying-Hao

    In the diligent pursuit of low-power consumption, multifunctional, and environmentally friendly electronics, more sophisticated requirements on functional materials are on demand. Recently, the discovery of 2D layered materials has created a revolution to this field. Pioneered by graphene, these new 2D materials exhibit abundant unusual physical phenomena that is undiscovered in bulk forms. These materials are characterized with their layer form and almost pure 2D electronic behavior. The confinement of charge and heat transport at such ultrathin planes offers possibilities to overcome the bottleneck of present device development in thickness limitation, and thus push the technologies into next generation. Van der Waals epitaxy, an epitaxial growth method to combine 2D and 3D materials, is one of current reliable manufacturing processes to fabricate 2D materials by growing these 2D materials epitaxially on 3D materials. Then, transferring the 2D materials to the substrates for practical applications. In the mean time, van der Waals epitaxy has also been used to create free-standing 3D materials by growing 3D materials on 2D materials and then removing them from 2D materials since the interfacial boding between 2D and 3D materials should be weak van der Waals bonds. In this study, we intend to take the same concept, but to integrate a family of functional materials in order to open new avenue to flexible electronics. Due to the interplay of lattice, charge, orbital, and spin degrees of freedom, correlated electrons in oxides generate a rich spectrum of competing phases and physical properties. Recently, lots of studies have suggested that oxide heterostructures provide a powerful route to create and manipulate the degrees of freedom and offer new possibilities for next generation devices, thus create a new playground for researchers to investigate novel physics and the emergence of fascinating states of condensed matter. In this talk, we use a 2D layered material as

  4. Epitaxial growth of high quality WO3 thin films

    DOE PAGES

    Leng, X.; Pereiro, J.; Strle, J.; Bollinger, A. T.; Bozovic, I.

    2015-09-09

    We have grown epitaxial WO3 films on various single-crystal substrates using radio-frequency (RF) magnetron sputtering. While pronounced surface roughness is observed in films grown on LaSrAlO4 substrates, films grown on YAlO3 substrates show atomically flat surfaces, as demonstrated by atomic force microscopy (AFM) and X-ray diffraction (XRD) measurements. The crystalline structure has been confirmed to be monoclinic by symmetric and skew-symmetric XRD. Furthermore, the dependence of the growth modes and the surface morphology on the lattice mismatch is discussed.

  5. Single-Nucleus Polycrystallization in Thin Film Epitaxial Growth

    SciTech Connect

    Sadowski, J. T.; Nishikata, S.; Al-Mahboob, A.; Fujikawa, Y.; Nakajima, K.; Sakurai, T.; Sazaki, G.; Tromp, R. M.

    2007-01-26

    We have observed, by use of low-energy electron microscopy, the first direct evidence of self-driven polycrystallization evolved from a single nucleus in the case of epitaxial pentacene growth on the Si(111)-H terminated surface. In this Letter we demonstrate that such polycrystallization can develop in anisotropic systems (in terms of crystal structure and/or the intermolecular interactions) when kinetic growth conditions force the alignment of the intrinsic preferential growth directions along the density gradient of diffusing molecules. This finding gives new insight into the crystallization of complex molecular systems, elucidating the importance of nanoscale control of the growth conditions.

  6. In situ growth of epitaxial cerium tungstate (100) thin films.

    PubMed

    Skála, Tomáš; Tsud, Nataliya; Orti, Miguel Ángel Niño; Menteş, Tevfik Onur; Locatelli, Andrea; Prince, Kevin Charles; Matolín, Vladimír

    2011-04-21

    The deposition of ceria on a preoxidized W(110) crystal at 870 K has been studied in situ by photoelectron spectroscopy and low-energy electron diffraction. Formation of an epitaxial layer of crystalline cerium tungstate Ce(6)WO(12)(100), with the metals in the Ce(3+) and W(6+) chemical states, has been observed. The interface between the tungsten substrate and the tungstate film consists of WO suboxide. At thicknesses above 0.89 nm, cerium dioxide grows on the surface of Ce(6)WO(12), favoured by the limited diffusion of tungsten from the substrate. PMID:21399780

  7. Epitaxial growth of high quality WO3 thin films

    NASA Astrophysics Data System (ADS)

    Leng, X.; Pereiro, J.; Strle, J.; Bollinger, A. T.; Božović, I.

    2015-09-01

    We have grown epitaxial WO3 films on various single-crystal substrates using radio frequency magnetron sputtering. While pronounced surface roughness is observed in films grown on LaSrAlO4 substrates, films grown on Y AlO3 substrates show atomically flat surfaces, as demonstrated by atomic force microscopy and X-ray diffraction (XRD) measurements. The crystalline structure has been confirmed to be monoclinic by symmetric and skew-symmetric XRD. The dependence of the growth modes and the surface morphology on the lattice mismatch are discussed.

  8. Molecular beam epitaxy growth of monolayer niobium diselenide flakes

    NASA Astrophysics Data System (ADS)

    Hotta, Takato; Tokuda, Takuto; Zhao, Sihan; Watanabe, Kenji; Taniguchi, Takashi; Shinohara, Hisanori; Kitaura, Ryo

    2016-09-01

    Monolayer niobium diselenide (NbSe2) is prepared through molecular beam epitaxy with hexagonal boron nitride (hBN) as substrates. Atomic force microscopy and the Raman spectroscopy have shown that the monolayer NbSe2 grown on the hBN possesses triangular or truncated triangular shape whose lateral size amounts up to several hundreds of nanometers. We have found that the precisely controlled supply rate and ultraflat surface of hBN plays an important role in the growth of the monolayer NbSe2.

  9. The effect of adsorption on static conductivity of epitaxial graphene

    NASA Astrophysics Data System (ADS)

    Davydov, S. Yu.

    2014-12-01

    An analytical expression for adsorption-induced changes in the static conductivity of the adlayer-single-sheet-graphene-substrate system has been obtained using the Kubo-Greenwood formalism with allowance for the dipole-dipole repulsion in the adlayer. The cases of both metal and semiconductor substrates have been considered. The results are applied to description of the hydrogen monolayer-single-sheet-graphene-tungsten substrate system. Numerical estimations show that the magnitude of the effect of the adsorbed hydrogen monolayer on the static conductivity σeg of epitaxial graphene on tungsten is on the order of the σeg value.

  10. Pulsed organometallic beam epitaxy of complex oxide films

    NASA Astrophysics Data System (ADS)

    Duray, S. J.; Buchholz, D. B.; Song, S. N.; Richeson, D. S.; Ketterson, J. B.; Marks, T. J.; Chang, R. P. H.

    1991-09-01

    The results are reported of a pulsed organometallic beam epitaxy (POMBE) process for growing complex oxide films at low background gas pressure and low substrate temperature using organometallic precursors in an oxygen plasma environment. The results show that POMBE can extend the capability of organometallic chemical vapor deposition to growing complex oxide films with high precision both in composition and structure without the need for post-deposition oxidation and heat treatments. The growth of phase-pure, highly oriented Y-Ba-Cu-O superconducting oxide films is given as an example. Similar to the pulsed laser deposition process, the POMBE method has the potential for in situ processing of multilayer structures.

  11. Molecular beam epitaxy grown indium self-assembled plasmonic nanostructures

    NASA Astrophysics Data System (ADS)

    Gibson, Ricky; Gehl, Michael; Sears, Jasmine; Zandbergen, Sander; Nader, Nima; Keiffer, Patrick; Hendrickson, Joshua; Arnoult, Alexandre; Khitrova, Galina

    2015-09-01

    We describe molecular beam epitaxy (MBE) growth conditions for self-assembled indium nanostructures, or islands, which allow for the tuning of the density and size of the indium nanostructures. How the plasmonic resonance of indium nanostructures is affected by the island density, size, distribution in sizes, and indium purity of the nanostructures is explored. These self-assembled nanostructures provide a platform for integration of resonant and non-resonant plasmonic structures within a few nm of quantum wells (QWs) or quantum dots (QDs) in a single process. A 4× increase in peak photoluminescence intensity is demonstrated for near-surface QDs resonantly coupled to indium nanostructures.

  12. Modeling of Gallium Nitride Hydride Vapor Phase Epitaxy

    NASA Technical Reports Server (NTRS)

    Meyyappan, Meyya; Arnold, James O. (Technical Monitor)

    1997-01-01

    A reactor model for the hydride vapor phase epitaxy of GaN is presented. The governing flow, energy, and species conservation equations are solved in two dimensions to examine the growth characteristics as a function of process variables and reactor geometry. The growth rate varies with GaCl composition but independent of NH3 and H2 flow rates. A change in carrier gas for Ga source from H2 to N2 affects the growth rate and uniformity for a fixed reactor configuration. The model predictions are in general agreement with observed experimental behavior.

  13. Molecular-Beam Epitaxy Of IrSi3

    NASA Technical Reports Server (NTRS)

    Lin, True-Lon

    1991-01-01

    Molecular-beam epitaxy grows layers of iridium silicide (IrSi3) on silicon at temperatures of 630 to 800 degrees C. Particularly useful as photodetector material because it forms Schottky diodes having potential barriers of only 0.12 to 0.15 eV - lowest of any metal on silicon. Photodiodes sensitive to infrared radiation at wavelengths as large as 8 to 10 micrometers. New, lower formation temperature expected to enable growth of arrays of IrSi3/Si infrared detectors on Si wafers without thermally damaging image-processing circuitry integrated on wafers.

  14. Highly p-doped epitaxial graphene obtained by fluorine intercalation

    NASA Astrophysics Data System (ADS)

    Walter, Andrew L.; Jeon, Ki-Joon; Bostwick, Aaron; Speck, Florian; Ostler, Markus; Seyller, Thomas; Moreschini, Luca; Kim, Yong Su; Chang, Young Jun; Horn, Karsten; Rotenberg, Eli

    2011-05-01

    We present a method for decoupling epitaxial graphene grown on SiC(0001) by intercalation of a layer of fluorine at the interface. The fluorine atoms do not enter into a covalent bond with graphene but rather saturate the substrate Si bonds. This configuration of the fluorine atoms induces a remarkably large hole density of p ≈4.5×1013 cm-2, equivalent to the location of the Fermi level at 0.79 eV above the Dirac point ED.

  15. Electronic states in epitaxial graphene fabricated on silicon carbide

    SciTech Connect

    Davydov, S. Yu.

    2011-08-15

    An analytical expression for the density of states of a graphene monolayer interacting with a silicon carbide surface (epitaxial graphene) is derived. The density of states of silicon carbide is described within the Haldane-Anderson model. It is shown that the graphene-substrate interaction results in a narrow gap of {approx}0.01-0.06 eV in the density of states of graphene. The graphene atom charge is estimated; it is shown that the charge transfer from the substrate is {approx}10{sup -3}-10{sup -2}e per graphene atom.

  16. Microstructure and twinning in epitaxial NiMnGa films

    NASA Astrophysics Data System (ADS)

    Mahnke, Guido J.; Seibt, M.; Mayr, S. G.

    2008-07-01

    Although magnetic shape memory alloys have attracted large scientific interest, miniaturization as single-crystalline thin films is still a greatly unresolved issue. In the present work we investigate the microstructure of epitaxial NiMnGa thin films which are fabricated by sputter deposition on magnesium oxide substrates at elevated temperatures. Transmission and scanning electron microscopy as well as atomic force microscopy studies are employed to relate surface topography to twin formation in 7 M martensitic NiMnGa films. Additional findings include pore formation in substrate proximity as well as minor precipitation with reduced nickel and gallium contents.

  17. Antiphase boundaries in epitaxially grown beta-SiC

    NASA Technical Reports Server (NTRS)

    Pirouz, P.; Chorey, C. M.; Powell, J. A.

    1987-01-01

    When the surface of beta-SiC, grown epitaxially on (001) silicon by chemical vapor deposition, is chemically etched, boundaries appear which may be observed by optical or scanning electron microscopy. Examination by plan-view and cross-sectional transmission electron microscopy shows boundaries in the film which exhibit line or fringe contrast. Convergent beam electron diffraction has been used to show that these boundaries separate domains that are in an antiphase relationship to each other. A model is presented which discusses the formation of these domains from independent nucleation on a stepped substrate surface.

  18. Chiral habit selection on nanostructured epitaxial quartz films.

    PubMed

    Carretero-Genevrier, Adrián; Gich, Martí; Picas, Laura; Sanchez, Clément; Rodriguez-Carvajal, Juan

    2015-01-01

    Understanding the crystallization of enantiomorphically pure systems can be relevant to diverse fields such as the study of the origins of life or the purification of racemates. Here we report on polycrystalline epitaxial thin films of quartz on Si substrates displaying two distinct types of chiral habits that never coexist in the same film. We combine Atomic Force Microscopy (AFM) analysis and computer-assisted crystallographic calculations to make a detailed study of these habits of quartz. By estimating the surface energies of the observed crystallites we argue that the films are enantiomorphically pure and we briefly outline a possible mechanism to explain the habit and chiral selection in this system.

  19. Surface morphology during multilayer epitaxial growth of Ge(001)

    SciTech Connect

    Van Nostrand, J.E.; Chey, S.J.; Hasan, M.; Cahill, D.G.; Greene, J.E. )

    1995-02-13

    The surface morphology of Ge(001) films grown by molecular beam epitaxy on a Ge(001) substrate is measured using scanning tunneling microscopy. Growth mounds are observed for single crystal films deposited at temperatures of 60--230 [degree]C and film thicknesses of 5 nm to 1 [mu]m. With increasing growth temperature, the average separation between mounds becomes increasingly well defined, increasing from less than 10 nm at 60 [degree]C to nearly 200 nm at 230 [degree]C. This regular arrangement of growth mounds is inconsistent with the self-affine growth morphology predicted by most kinetic roughening models.

  20. Dynamic nonlinearity in epitaxial BaTi O3 films

    NASA Astrophysics Data System (ADS)

    Tyunina, M.; Savinov, M.

    2016-08-01

    Dynamic dielectric and piezoelectric constants of ferroelectrics increase proportionally to the amplitude of alternating electric field as a result of hysteretic Rayleigh-type motion of domain walls. Here a hysteresis-free quadratic field dependence of the dynamic dielectric response is experimentally demonstrated in the absence of domain walls in epitaxial BaTi O3 films. This extraordinary behavior is related to polar entities, whose presence is confirmed by the Vogel-Fulcher relaxation. The polar entities are ascribed to polarization fluctuations associated with lattice inhomogeneity.

  1. Delayed Shutters For Dual-Beam Molecular Epitaxy

    NASA Technical Reports Server (NTRS)

    Grunthaner, Frank J.; Liu, John L.; Hancock, Bruce

    1989-01-01

    System of shutters for dual-molecular-beam epitaxy apparatus delays start of one beam with respect to another. Used in pulsed-beam equipment for deposition of low-dislocation layers of InAs on GaAs substrates, system delays application of arsenic beam with respect to indium beam to assure proper stoichiometric proportions on newly forming InAs surface. Reflectance high-energy electron diffraction (RHEED) instrument used to monitor condition of evolving surface of deposit. RHEED signal used to time pulsing of molecular beams in way that minimizes density of defects and holds lattice constant of InAs to that of GaAs substrate.

  2. Microscopic origin of the π states in epitaxial silicene

    SciTech Connect

    Fleurence, A. Lee, C.-C.; Yamada-Takamura, Y.; Yoshida, Y.; Hasegawa, Y.; Ozaki, T.

    2014-01-13

    We investigated the electronic properties of epitaxial silicene on ZrB{sub 2}(0001) thin film grown on Si(111) by means of low-temperature scanning tunneling spectroscopy and density functional theory calculations. The position of silicon atoms and thus, the localization of the valence and conduction states were deducted from the comparison of the spectra and the computed local density of states. We point out the strong contribution of p{sub z} orbitals of specific atoms to those states which indicates the π character of the conduction and valence bands. A clear correlation between hybridization of the orbitals of the Si atoms and the buckling was evidenced.

  3. Theoretical investigations of the g factors of orthorhombic Cu2+ site in oxycarbonate phase YBa2Cu2.95(CO3)0.35O6.6

    NASA Astrophysics Data System (ADS)

    Xu, Yong-Qiang; Wu, Shao-Yi; Zhang, Zhi-Hong; Dong, Hui-Ning

    2015-08-01

    The g factors of orthorhombic Cu2+(1) site in oxycarbonate phase YBa2Cu2.95(CO3)0.35O6.6 are theoretically investigated using the perturbation formulas of the g factors for an orthorhombically elongated 3d9 cluster. This pseudo-octahedral Cu2+ center is formed by two apical oxygen ligands and four coplanar oxygen ions belonging to the respective four neighboring carbonate groups. The [CuO6]10- cluster is found to suffer the relative axial elongation of about 0.04 Å and the perpendicular bond length variation of about 0.12 Å due to the Jahn-Teller effect. The theoretical g factors based on the local structural parameters show good agreement with the experimental data.

  4. Selective-area epitaxial growth of GaAs in deep dielectric windows using molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Loke, W. K.; Yoon, S. F.; Zheng, H. Q.

    2001-01-01

    An improved selective-area epitaxial growth process for GaAs in deep dielectric windows (DDWs) is reported. The growth was carried out on (100)-oriented semi-insulating (SI) GaAs substrate at ˜520°C by solid source molecular beam epitaxy (SSMBE) using a valved arsenic cracker source. Dielectric stacks with 10 periods of alternating silicon nitride (2000 Å) and silicon dioxide (1000 Å) layers were deposited using plasma-enhanced chemical vapor deposition (PECVD) for the formation of deep (3 μm) dielectric windows. The alternating dielectric layer stack has been shown to be of greater stability than a single dielectric layer for the purpose of forming the DDW. A process of fabricating the DDW structures, which eliminates the possible contamination at the growth area during photoresist patterning and removing, and subsequent etching of the DDW, has resulted in improved epitaxial layer quality. Micro-Raman spectroscopy measurements showed a significant increase in the longitudinal-optic (LO) to transverse-optic (TO) signal intensity ratio ( ILO/TO) from ˜4.0 to ˜16.0 of the first-order Raman line of GaAs. Supporting evidence from low-temperature (4 K) photoluminescence (PL) showed a reduction in intensity of the conduction band to neutral carbon acceptor (e-C°) emission by a factor of 4.5. This suggests lower levels of carbon contamination originating from the improved fabrication process of the DDW. Scanning electron microscopy (SEM) images showed smoother surface morphology of the GaAs inside the DDW area. These results have important implications on the process of MBE regrowth for optoelectronics integration.

  5. Single crystal growth and the electronic structure of orthorhombic Tl3PbBr5: A novel material for non-linear optics

    NASA Astrophysics Data System (ADS)

    Khyzhun, O. Y.; Bekenev, V. L.; Parasyuk, O. V.; Danylchuk, S. P.; Denysyuk, N. M.; Fedorchuk, A. O.; AlZayed, N.; Kityk, I. V.

    2013-03-01

    The X-ray photoelectron core-level and valence-band spectra for pristine and Ar+-ion irradiated surfaces of a Tl3PbBr5 single crystal grown by the Bridgman-Stockbarger method have been measured. The present X-ray photoelectron spectroscopy (XPS) results reveal high chemical stability of Tl3PbBr5 single crystal surface. Total and partial densities of states of constituent atoms of low-temperature (LT) orthorhombic Tl3PbBr5 phase (space group P21212) have been calculated using the full potential linearized augmented plane wave (FP-LAPW) method. The FP-LAPW data reveal that contributions of the Br 4p-like states dominate in the valence band of LT-Tl3PbBr5; they contribute mainly into the top and the central portion of the valence band with also significant contributions throughout the whole valence-band region. The bottom of the valence band of LT-Tl3PbBr5 is composed mainly of the Tl 6s-like states, whilst the unoccupied Pb 6p- and Tl 6p-like states dominate at the bottom of the conduction band. We have explored the crystallochemistry and origin of the chemical bonds in Tl3PbBr5 with respect to the use as mid-IR non-linear optical crystals. Comparison of the spectral dependence to the second order susceptibilities for the titled crystals is performed with respect to the 3.39 μm illuminated crystals. Possibility of the use of Tl3PbBr5 crystals as IR operated non-linear optical crystals is discussed.

  6. Epitaxy and Microstructure Evolution in Metal Additive Manufacturing

    NASA Astrophysics Data System (ADS)

    Basak, Amrita; Das, Suman

    2016-07-01

    Metal additive manufacturing (AM) works on the principle of incremental layer-by-layer material consolidation, facilitating the fabrication of objects of arbitrary complexity through the controlled melting and resolidification of feedstock materials by using high-power energy sources. The focus of metal AM is to produce complex-shaped components made of metals and alloys to meet demands from various industrial sectors such as defense, aerospace, automotive, and biomedicine. Metal AM involves a complex interplay between multiple modes of energy and mass transfer, fluid flow, phase change, and microstructural evolution. Understanding the fundamental physics of these phenomena is a key requirement for metal AM process development and optimization. The effects of material characteristics and processing conditions on the resulting epitaxy and microstructure are of critical interest in metal AM. This article reviews various metal AM processes in the context of fabricating metal and alloy parts through epitaxial solidification, with material systems ranging from pure-metal and prealloyed to multicomponent materials. The aim is to cover the relationships between various AM processes and the resulting microstructures in these material systems.

  7. Structure and transport of topological insulators on epitaxial graphene

    NASA Astrophysics Data System (ADS)

    Kally, James; Reifsnyder Hickey, Danielle; Lin, Yu-Chuan; Richardella, Anthony; Lee, Joon Sue; Robinson, Joshua; Mkhoyan, K. Andre; Samarth, Nitin

    Recent advancements in spintronics have shown that a class of materials, topological insulators (TI), can be used as a spin-current generator or detector. Topological insulators have protected surface states with the electron's spin locked to its momentum. To access these surface states, (Bi, Sb)2Te3 can be grown by molecular beam epitaxy to have the Fermi energy near the Dirac point so that transport occurs only through the spin-dependent surface states. Graphene is another 2D material of great interest for spintronics because of its very long spin diffusion length. This is an ideal material to act as a spin channel in devices. The van der Waals nature of the growth exhibited by 2D materials such as (Bi, Sb)2Te3 and graphene allows heterostructures to be formed despite the large lattice mismatch. We explore the structure and transport of (Bi, Sb)2Te3 grown on epitaxial graphene on 6H-SiC substrates for spintronic applications. This work was supported in part by C-SPIN and LEAST, two of the six centers of STARnet, a Semiconductor Research Corporation program, sponsored by MARCO and DARPA.

  8. Imaging of Electron Beam Induced Current in Epitaxial graphene

    NASA Astrophysics Data System (ADS)

    Mou, Shin; Boeckl, John; Lu, Weijie; Park, J. H.; Mitchel, W. C.; Tetlak, Stephen

    2012-02-01

    It has been observed that there forms a Schottky junction between graphene and SiC in epitaxial graphene due to the work function difference. As a result, it is viable to apply the electron beam induced current (EBIC) technique on epitaxial graphene due to the fact that it needs a built-in field and ample electron generation volume to generate EBIC. EBIC is an important characterization technique, which identifies electrically active impurities/defects, detects local built-in field, and measures minority carrier diffusion length. In this paper, we use a FEI SEM equipped with a current amplifier to investigate the spatial mapping of EBIC. The incident electron beam generates excited electron-hole pairs in SiC and the minority carriers are collected through the Schottky junction before flowing into graphene. EBIC imaging reveals mesoscopic domains of bright and dark contrast areas due to local EBIC polarity and magnitude, which is believed to be the result of spatial fluctuation in the carrier density in graphene. We also investigate the electron energy dependence, which modulates the EBIC magnitude. With an analytical drift-diffusion current model, we are able to extract the minority carrier diffusion length in the SiC, which is on the order of micro meter.

  9. Growth and Features of Epitaxial Graphene on SiC

    NASA Astrophysics Data System (ADS)

    Kusunoki, Michiko; Norimatsu, Wataru; Bao, Jianfeng; Morita, Koichi; Starke, Ulrich

    2015-12-01

    Recent progress of epitaxial graphene on SiC was reviewed, focusing on its growth and structural and electronic features. Homogeneous graphene can be grown on SiC(0001) on a wafer scale, however on SiC(000bar{1}) multilayer but rotationally stacked graphene with monolayer like electronic property grows. HRTEM revealed the formation mechanism and structural features of graphene on the both surfaces. The high structural and electronic quality of the grown graphene is monitored by Raman spectroscopy and magneto-transport characterization. High-resolution ARPES measurements of the electronic dispersion around the bar{K}-point retrieved the ABA and ABC stacked trilayer graphene. The measurements also directly revealed that electronic structures of graphene were manipulated by transfer doping and atomic intercalation. In particular, p- and n-doped regions on a meso-scale and the p-n junctions prepared on SiC via controlling intercalation of Ge exhibited ballistic transport and Klein tunneling, which predicted novel potentials on to epitaxial graphene on SiC.

  10. Epitaxial stabilization and phase instability of VO2 polymorphs

    DOE PAGES

    Lee, Shinbuhm; Ivanov, Ilia N.; Keum, Jong K.; Lee, Ho Nyung

    2016-01-20

    The VO2 polymorphs, i.e., VO2(A), VO2(B), VO2(M1) and VO2(R), have a wide spectrum of functionalities useful for many potential applications in information and energy technologies. However, synthesis of phase pure materials, especially in thin film forms, has been a challenging task due to the fact that the VO2 polymorphs are closely related to each other in a thermodynamic framework. Here, we report epitaxial stabilization of the VO2 polymorphs to synthesize high quality single crystalline thin films and study the phase stability of these metastable materials. We selectively deposit all the phases on various perovskite substrates with different crystallographic orientations. Bymore » investigating the phase instability, phonon modes and transport behaviours, not only do we find distinctively contrasting physical properties of the VO2 polymorphs, but that the polymorphs can be on the verge of phase transitions when heated as low as ~400 °C. In conclusion, our successful epitaxy of both VO2(A) and VO2(B) phases, which are rarely studied due to the lack of phase pure materials, will open the door to the fundamental studies of VO2 polymorphs for potential applications in advanced electronic and energy devices.« less

  11. Epitaxial stabilization and phase instability of VO2 polymorphs

    NASA Astrophysics Data System (ADS)

    Lee, Shinbuhm; Ivanov, Ilia N.; Keum, Jong K.; Lee, Ho Nyung

    2016-01-01

    The VO2 polymorphs, i.e., VO2(A), VO2(B), VO2(M1) and VO2(R), have a wide spectrum of functionalities useful for many potential applications in information and energy technologies. However, synthesis of phase pure materials, especially in thin film forms, has been a challenging task due to the fact that the VO2 polymorphs are closely related to each other in a thermodynamic framework. Here, we report epitaxial stabilization of the VO2 polymorphs to synthesize high quality single crystalline thin films and study the phase stability of these metastable materials. We selectively deposit all the phases on various perovskite substrates with different crystallographic orientations. By investigating the phase instability, phonon modes and transport behaviours, not only do we find distinctively contrasting physical properties of the VO2 polymorphs, but that the polymorphs can be on the verge of phase transitions when heated as low as ~400 °C. Our successful epitaxy of both VO2(A) and VO2(B) phases, which are rarely studied due to the lack of phase pure materials, will open the door to the fundamental studies of VO2 polymorphs for potential applications in advanced electronic and energy devices.

  12. Extraordinary epitaxial alignment of graphene islands on Au(111)

    NASA Astrophysics Data System (ADS)

    Wofford, Joseph M.; Starodub, Elena; Walter, Andrew L.; Nie, Shu; Bostwick, Aaron; Bartelt, Norman C.; Thürmer, Konrad; Rotenberg, Eli; McCarty, Kevin F.; Dubon, Oscar D.

    2012-05-01

    Pristine, single-crystalline graphene displays a unique collection of remarkable electronic properties that arise from its two-dimensional, honeycomb structure. Using in situ low-energy electron microscopy, we show that when deposited on the (111) surface of Au carbon forms such a structure. The resulting monolayer, epitaxial film is formed by the coalescence of dendritic graphene islands that nucleate at a high density. Over 95% of these islands can be identically aligned with respect to each other and to the Au substrate. Remarkably, the dominant island orientation is not the better lattice-matched 30° rotated orientation but instead one in which the graphene [01] and Au [011] in-plane directions are parallel. The epitaxial graphene film is only weakly coupled to the Au surface, which maintains its reconstruction under the slightly p-type doped graphene. The linear electronic dispersion characteristic of free-standing graphene is retained regardless of orientation. That a weakly interacting, non-lattice matched substrate is able to lock graphene into a particular orientation is surprising. This ability, however, makes Au(111) a promising substrate for the growth of single crystalline graphene films.

  13. Development of thin edgeless silicon pixel sensors on epitaxial wafers

    NASA Astrophysics Data System (ADS)

    Boscardin, M.; Bosisio, L.; Contin, G.; Giacomini, G.; Manzari, V.; Orzan, G.; Rashevskaya, I.; Ronchin, S.; Zorzi, N.

    2014-09-01

    The paper reports on the development of novel p-on-n thin edgeless planar pixel sensors, compatible with ALICE front-end electronics, fabricated by FBK on epitaxial material. The focus of the activity is the minimization of the material budget required for hybrid pixel detectors. This goal has been addressed in two different stages. In the first one, planar pixel detectors fabricated on epitaxial wafers have been thinned and bonded to the readout chips. The second stage is described by the present paper: the `active edge' concept has been studied for the reduction of the dead area at the periphery of the devices. An overview of the key technological steps and of the electrical characterization of the fabricated sensors is given. In addition, the preliminary results on the static behavior of test sensors after neutron irradiation at different fluences (up to 2.5 × 1015 1 MeV-neq/cm2) are reported. The results demonstrate that these kinds of devices are a viable solution for the reduction of the material budget while maintaining the typical electrical characteristics expected from radiation silicon sensors.

  14. Monolithic preamplifier employing epitaxial N-channel JFETs

    SciTech Connect

    Radeka, V.; Rescia, S. ); Manfredi, P.F.; Re, V.; Speziali, V. . Dipt. di Elettronica Istituto Nazionale di Fisica Nucleare, Milan )

    1992-02-01

    This paper reports the results obtained in the research program oriented to the realisation of a monolithic preamplifier for calorimetry applications at high luminosity colliders. The main purpose of the program is to arrive at a monolithic realisation with a performance as close as possible to that of discrete preamplifiers. The junction field-effect transistors employed in discrete preamplifiers have an epitaxial channel and a very heavily doped gate diffused onto it. They present the best noise and radiation tolerance characteristics. The first step in the program implementation was, accordingly, the search for a process able to make the integration of epitaxial-channel. JFETs on a monolithic substrate possible. The integration has been accomplished on the basis of a buried-layer approach to device isolation. Individual JFETs and a complete preamplifier employing only N-channel JFETs have been realised. The characterisation of the individual devices has shown that their behaviour in terms of small signal and noise parameters is very close to that of their discrete equivalents. This result, along with the very good noise performances of the preamplifier, seems to point out that the buried layer process has fulfilled the task for which it was developed.

  15. Epitaxial phase of hafnium dioxide for ultrascaled electronics

    SciTech Connect

    Debernardi, Alberto; Wiemer, Claudia; Fanciulli, Marco

    2007-10-15

    We propose a mechanism leading to the local epitaxy observed in HfO{sub 2} films grown on Ge(001). Our model is based on state-of-the-art ab initio calculations compared with available experimental data. According to the proposed model, the observed preferential orientation of the monoclinic structure is related to the relaxation of the epitaxially stabilized anatase phase when a critical thickness is reached. In fact, the preferential orientation of the monoclinic structure follows the in-plane axis of the anatase phase, as proven by accurate x-ray scattering data. We predict that the anatase phase, which has no bulk counterpart and has a calculated dielectric constant comparable to the bulk monoclinic one, is almost lattice matched with the Ge(001) substrate. Although the observation of the anatase phase is still missing, its stabilization would allow a control at the atomic level of the HfO{sub 2}/Ge(001) interface, possibly providing better performances in the next generation complementary-metal-oxide-semiconductor devices.

  16. Epitaxial growth mechanisms of graphene and effects of substrates

    NASA Astrophysics Data System (ADS)

    Özçelik, V. Ongun; Cahangirov, S.; Ciraci, S.

    2012-06-01

    The growth process of single layer graphene with and without substrate is investigated using ab initio, finite temperature molecular dynamic calculations within density functional theory. An understanding of the epitaxial graphene growth mechanisms in the atomic level is provided by exploring the transient stages which occur at the growing edges of graphene. These stages are formation and collapse of large carbon rings together with the formation and healing of Stone-Wales like pentagon-heptagon defects. The activation barriers for the healing of these growth induced defects on various substrates are calculated using the climbing image nudge elastic band method and compared with that of the Stone-Wales defect. It is found that the healing of pentagon-heptagon defects occurring near the edge in the course of growth is much easier than that of Stone-Wales defect. The role of the substrate in the epitaxial growth and in the healing of defects are also investigated in detail, along with the effects of using carbon dimers as the building blocks of graphene growth.

  17. Charged nano-domes and bubbles in epitaxial graphene.

    PubMed

    Trabelsi, A Ben Gouider; Kusmartsev, F V; Robinson, B J; Ouerghi, A; Kusmartseva, O E; Kolosov, O V; Mazzocco, R; Gaifullin, Marat B; Oueslati, M

    2014-04-25

    For the first time, new epitaxial graphene nano-structures resembling charged 'bubbles' and 'domes' are reported. A strong influence, arising from the change in morphology, on the graphene layer's electronic, mechanical and optical properties has been shown. The morphological properties of these structures have been studied with atomic force microscopy (AFM), ultrasonic force microscopy (UFM) and Raman spectroscopy. After initial optical microscopy observation of the graphene, a detailed description of the surface morphology, via AFM and nanomechanical UFM measurements, was obtained. Here, graphene nano-structures, domes and bubbles, ranging from a few tens of nanometres (150–200 nm) to a few μm in size have been identified. The AFM topographical and UFM stiffness data implied the freestanding nature of the graphene layer within the domes and bubbles, with heights on the order of 5–12 nm. Raman spectroscopy mappings of G and 2D bands and their ratio confirm not only the graphene composition of these structures but also the existence of step bunching, defect variations and the carrier density distribution. In particular, inside the bubbles and substrate there arises complex charge redistribution; in fact, the graphene bubble–substrate interface forms a charged capacitance. We have determined the strength of the electric field inside the bubble–substrate interface, which may lead to a minigap of the order of 5 meV opening for epitaxial graphene grown on 4H-SiC face-terminated carbon.

  18. Crystal nucleation and near-epitaxial growth in nacre.

    PubMed

    Olson, Ian C; Blonsky, Adam Z; Tamura, Nobumichi; Kunz, Martin; Pokroy, Boaz; Romao, Carl P; White, Mary Anne; Gilbert, Pupa U P A

    2013-12-01

    Nacre is the iridescent inner lining of many mollusk shells, with a unique lamellar structure at the sub-micron scale, and remarkable resistance to fracture. Despite extensive studies, nacre formation mechanisms remain incompletely understood. Here we present 20-nm, 2°-resolution polarization-dependent imaging contrast (PIC) images of shells from 15 mollusk species, mapping nacre tablets and their orientation patterns. These data show where new crystal orientations appear and how similar orientations propagate as nacre grows. In all shells we found stacks of co-oriented aragonite (CaCO₃) tablets arranged into vertical columns or staggered diagonally. Near the nacre-prismatic (NP) boundary highly disordered spherulitic aragonite is nucleated. Overgrowing nacre tablet crystals are most frequently co-oriented with the underlying aragonite spherulites, or with another tablet. Away from the NP-boundary all tablets are nearly co-oriented in all species, with crystal lattice tilting, abrupt or gradual, always observed and always small (plus or minus 10°). Therefore aragonite crystal growth in nacre is near-epitaxial. Based on these data, we propose that there is one mineral bridge per tablet, and that "bridge tilting" may occur without fracturing the bridge, hence providing the seed from which the next tablet grows near-epitaxially.

  19. Optimal doping control of magnetic semiconductors via subsurfactant epitaxy

    SciTech Connect

    Zeng, Changgan; Zhang, Zhenyu; van Benthem, Klaus; Chisholm, Matthew F; Weitering, Harm H

    2008-02-01

    Dilute magnetic semiconductors (DMS) with high ferromagnetic ordering temperatures (T{sub c}) have vast potential for advancing spin-based electronics or 'spintronics'. To date, achieving high-T{sub c} DMS typically required doping levels of order 5%. Such high doping levels inevitably compromise the structural homogeneity and carrier mobility of the DMS. Here, we establish 'subsurfactant epitaxy' as a novel kinetic pathway for synthesizing Mn-doped germanium with T{sub c} much higher than room temperature, at dramatically reduced doping levels. This is accomplished by optimal control of the diffusion kinetics of the dopant atoms near the growth front in two separate deposition steps. The first involves a submonolayer dose of Mn on Ge(100) at low temperature, which populates subsurface interstitial sites with Mn while suppressing lateral Mn diffusion and clustering. The second step involves epitaxial growth of Ge at elevated temperature, taking advantage of the strong floating ability of the interstitial Mn dopants towards the newly defined subsurface sites at the growth front. Most remarkably, the Mn dopants trapped inside the film are uniformly distributed at substitutional sites, and the resulting film exhibits ferromagnetism above 400 K at the nominal doping level of only 0.2%.

  20. Van der Waals Epitaxy of Ultrathin Halide Perovkistes

    NASA Astrophysics Data System (ADS)

    Wang, Yiping; Shi, Yunfeng; Shi, Jian

    We present our understanding, with CH3NH3PbX3 as a model system, on the 2D van der Waals growth and kinetics of 3D parent materials. We show the successful synthesis of ultrathin (sub-10 nm), large scale (a few tens of μm) single crystalline 2D perovskite thin films on layered mica substrate by van der Waals (VDW) epitaxy. Classical nucleation and growth model explaining conventional epitaxy has been modified to interpret the unique 2D results under VDW mechanism. The generalization of our model shows that a 3D crystal with low cohesive energy tends to favor the 2D growth while the one with strong cohesive energy has less kinetic window. With Monte Carlo simulations, we show that the fractal 2D morphology in perovskite precisely manifests the kinetic competition between VDW diffusivity and thermodynamic driving force, a unique phenomenon to VDW growth, suggesting a fundamental limit on the morphology stability of the 2D form of a 3D material. On the other hand, our single crystal thin film growth results and subsequent cryogenic study in the iodide perovskite provide a perfect resource for the exploration of its complex optical and electronic properties and unveiling the origins of its popularity in the energy conversion field.

  1. Dewetting of Epitaxial Silver Film on Silicon by Thermal Annealing

    NASA Astrophysics Data System (ADS)

    Sanders, Charlotte E.; Kellogg, Gary L.; Shih, C.-K.

    2013-03-01

    It has been shown that noble metals can grow epitaxially on semiconducting and insulating substrates, despite being a non-wetting system: low temperature deposition followed by room temperature annealing leads to atomically flat film morphology. However, the resulting metastable films are vulnerable to dewetting, which has limited their utility for applications under ambient conditions. The physics of this dewetting is of great interest but little explored. We report on an investigation of the dewetting of epitaxial Ag(111) films on Si(111) and (100). Low energy electron microscopy (LEEM) shows intriguing evolution in film morphology and crystallinity, even at temperatures below 100oC. On the basis of these findings, we can begin to draw compelling inferences about film-substrate interaction and the kinetics of dewetting. Financial support is from NSF, DGE-0549417 and DMR-0906025. This work was performed, in part, at the Center for Integrated Nanotechnologies, User Facility operated for the U.S. DOE Office of Science. Sandia National Lab is managed and operated by Sandia Corp., a subsidiary of Lockheed Martin Corp., for the U.S. DOE's National Nuclear Security Administration under DE-AC04-94AL85000.

  2. Optimization of epitaxial layer design for high brightness tapered lasers

    NASA Astrophysics Data System (ADS)

    Tijero, J. M. G.; Rodriguez, D.; Borruel, L.; Sujecki, S.; Larkins, E. C.; Esquivias, I.

    2005-04-01

    A comparative simulation study of the optical output characteristics of tapered lasers with different epitaxial structure was performed. The simulation model self-consistently solves the steady state electrical and optical equations for the flared unstable resonator and was previously backed by experiments on one of the simulated structures. Three different epitaxial designs emitting at 975 nm were analyzed: a standard single quantum well symmetrically located in the confinement region (s-SQW), a double quantum well also symmetrically located (s-DQW) and an asymmetrically located double quantum well (a-DQW). The symmetric structures have different confinement factor but a similar ratio between the active layer thickness and the confinement factor, dQW/Γ, while the a-DQW has similar confinement factor than the s-SQW, but double dQW/Γ. A better performance is predicted for the a-DQW design, reaching considerably higher output power with good beam quality. The results are interpreted in terms of a lower density of power in the QW in the case of the a-DQW design, thus delaying to higher output power the onset of the non-linear effects that degrade the beam quality. The role of dQW/Γ as a figure of merit for high brightness tapered lasers is emphasized.

  3. Epitaxial stabilization and phase instability of VO2 polymorphs

    PubMed Central

    Lee, Shinbuhm; Ivanov, Ilia N.; Keum, Jong K.; Lee, Ho Nyung

    2016-01-01

    The VO2 polymorphs, i.e., VO2(A), VO2(B), VO2(M1) and VO2(R), have a wide spectrum of functionalities useful for many potential applications in information and energy technologies. However, synthesis of phase pure materials, especially in thin film forms, has been a challenging task due to the fact that the VO2 polymorphs are closely related to each other in a thermodynamic framework. Here, we report epitaxial stabilization of the VO2 polymorphs to synthesize high quality single crystalline thin films and study the phase stability of these metastable materials. We selectively deposit all the phases on various perovskite substrates with different crystallographic orientations. By investigating the phase instability, phonon modes and transport behaviours, not only do we find distinctively contrasting physical properties of the VO2 polymorphs, but that the polymorphs can be on the verge of phase transitions when heated as low as ~400 °C. Our successful epitaxy of both VO2(A) and VO2(B) phases, which are rarely studied due to the lack of phase pure materials, will open the door to the fundamental studies of VO2 polymorphs for potential applications in advanced electronic and energy devices. PMID:26787259

  4. Apparatus for externally controlled closed-loop feedback digital epitaxy

    DOEpatents

    Eres, D.; Sharp, J.W.

    1996-07-30

    A method and apparatus for digital epitaxy are disclosed. The apparatus includes a pulsed gas delivery assembly that supplies gaseous material to a substrate to form an adsorption layer of the gaseous material on the substrate. Structure is provided for measuring the isothermal desorption spectrum of the growth surface to monitor the active sites which are available for adsorption. The vacuum chamber housing the substrate facilitates evacuation of the gaseous material from the area adjacent the substrate following exposure. In use, digital epitaxy is achieved by exposing a substrate to a pulse of gaseous material to form an adsorption layer of the material on the substrate. The active sites on the substrate are monitored during the formation of the adsorption layer to determine if all the active sites have been filled. Once the active sites have been filled on the growth surface of the substrate, the pulse of gaseous material is terminated. The unreacted portion of the gas pulse is evacuated by continuous pumping. Subsequently, a second pulse is applied when availability of active sites is determined by studying the isothermal desorption spectrum. These steps are repeated until a thin film of sufficient thickness is produced. 5 figs.

  5. Apparatus for externally controlled closed-loop feedback digital epitaxy

    DOEpatents

    Eres, Djula; Sharp, Jeffrey W.

    1996-01-01

    A method and apparatus for digital epitaxy. The apparatus includes a pulsed gas delivery assembly that supplies gaseous material to a substrate to form an adsorption layer of the gaseous material on the substrate. Structure is provided for measuring the isothermal desorption spectrum of the growth surface to monitor the active sites which are available for adsorption. The vacuum chamber housing the substrate facilitates evacuation of the gaseous material from the area adjacent the substrate following exposure. In use, digital epitaxy is achieved by exposing a substrate to a pulse of gaseous material to form an adsorption layer of the material on the substrate. The active sites on the substrate are monitored during the formation of the adsorption layer to determine if all the active sites have been filled. Once the active sites have been filled on the growth surface of the substrate, the pulse of gaseous material is terminated. The unreacted portion of the gas pulse is evacuated by continuous pumping. Subsequently, a second pulse is applied when availability of active sites is determined by studying the isothermal desorption spectrum. These steps are repeated until a thin film of sufficient thickness is produced.

  6. Silicon Carbide Epitaxial Films Studied by Atomic Force Microscopy

    NASA Technical Reports Server (NTRS)

    1996-01-01

    Silicon carbide (SiC) holds great potential as an electronic material because of its wide band gap energy, high breakdown electric field, thermal stability, and resistance to radiation damage. Possible aerospace applications of high-temperature, high-power, or high-radiation SiC electronic devices include sensors, control electronics, and power electronics that can operate at temperatures up to 600 C and beyond. Commercially available SiC devices now include blue light-emitting diodes (LED's) and high-voltage diodes for operation up to 350 C, with other devices under development. At present, morphological defects in epitaxially grown SiC films limit their use in device applications. Research geared toward reducing the number of structural inhomogeneities can benefit from an understanding of the type and nature of problems that cause defects. The Atomic Force Microscope (AFM) has proven to be a useful tool in characterizing defects present on the surface of SiC epitaxial films. The in-house High-Temperature Integrated Electronics and Sensors (HTIES) Program at the NASA Lewis Research Center not only extended the dopant concentration range achievable in epitaxial SiC films, but it reduced the concentration of some types of defects. Advanced structural characterization using the AFM was warranted to identify the type and structure of the remaining film defects and morphological inhomogeneities. The AFM can give quantitative information on surface topography down to molecular scales. Acquired, in part, in support of the Advanced High Temperature Engine Materials Technology Program (HITEMP), the AFM had been used previously to detect partial fiber debonding in composite material cross sections. Atomic force microscopy examination of epitaxial SiC film surfaces revealed molecular-scale details of some unwanted surface features. Growth pits propagating from defects in the substrate, and hillocks due, presumably, to existing screw dislocations in the substrates, were

  7. Growth and characterization of epitaxial silver indium diselenide

    NASA Astrophysics Data System (ADS)

    Pena Martin, Pamela

    Photovoltaics (solar cells) are a key player in the renewable energy frontier, and will become increasingly important as their cost per watt continues to drop, especially if fossil fuel costs increase. One particularly promising photovoltaic technology is based on chalcopyrite-structure semiconductors. Within the chalcopyrite compounds the highest efficiency thin film solar cell absorber material to date is Cu(In,Ga)Se2 (CIGS). While current efficiency records are over 21% for single-junction cells, there is still room for improvement. Replacing some of the Cu with Ag has been shown to be beneficial in CIGS devices. However, the Ag- containing chalcopyrites are still relatively unknown in terms of their growth mechanism, energetics, and surface atomic and electronic properties. These are best inferred through study of epitaxial films, yet they have little mention in literature and have not been the subject of a detailed study. This work describes the growth of epitaxial AgInSe2 (AIS) on GaAs substrates, studying the morphology, structure, and surface properties to understand how growth takes place. It also seeks to experimentally determine the surface electronic and atomic structure at the atomic scale to gain insight into the part of the material that forms the heterojunction that collects photon energy in the device. Finally, this work seeks to compare and contrast these findings with what is known about CIGS to determine where similarities and, more importantly, the differences may lie. This study has found that single phase tetragonal AIS can be epitaxially grown on GaAs, as illustrated by x-ray diffraction (XRD), transmission electron microscope (TEM), and surface morphology data. Like CIGS, the close packed polar (112) planes have the lowest energy. The morphology points to a difference in step dynamics, leading to less faceted, straight edged island shapes compared to CIGS. Epitaxial temperature as a function of growth direction shows a different trend in

  8. Predicting epitaxial orientations and lattice structure in ultrathin magnetic thin films

    NASA Astrophysics Data System (ADS)

    Lu, Yong; Wang, Cuiping; Shi, Rongpei; Cui, Yuanyuan; Shi, Zhan; Yang, Shuiyuan; Cui, Yuwen; Liu, Xingjun

    2016-07-01

    Metastable phases, such as bcc Co or Ni and hcp Fe or Ni, reportedly possess extraordinary magnetic properties for epitaxial ultra-thin films. To understand phase stability of these epitaxy-oriented phases upon substrate lattices, we calculated novel phase diagrams of Co, Fe, and Ni ultrathin films by considering the chemical free energy, elastic strain energy, and surface energy. Verified by experimental data in the literatures, the stable epitaxy-oriented phases are readily identified from the phase diagrams. The stabilization of these metastable phases is determined by the interplay between orientation-dependent elastic strain energy and surface energy.

  9. Epitaxial integration of ferromagnetic correlated oxide LaCoO{sub 3} with Si (100)

    SciTech Connect

    Posadas, A.; Berg, M.; Seo, H.; Lozanne, A. de; Demkov, A. A.; Smith, D. J.; Kirk, A. P.; Zhernokletov, D.; Wallace, R. M.

    2011-01-31

    We have grown epitaxial strained LaCoO{sub 3} on (100)-oriented silicon by molecular beam epitaxy using a relaxed epitaxial SrTiO{sub 3} buffer layer. Superconducting quantum interference device magnetization measurements show that, unlike the bulk material, the ground state of the strained LaCoO{sub 3} on silicon is ferromagnetic with a T{sub C} of 85 K. First principles calculations suggest that a ferromagnetic ground state can be stabilized in LaCoO{sub 3} by a sufficiently large biaxial tensile strain with the transition accompanied by a partial untilting of the CoO{sub 6} octahedra.

  10. HgTe-CdTe-InSb heterostructures by molecular beam epitaxy

    SciTech Connect

    Ballingall, J.M.; Leopold, D.J.; Peterman, D.J.

    1985-08-01

    HgTe-CdTe heterostructures have been grown by molecular beam epitaxy on (100) InSb substrates. Separate elemental Hg and Te beams were used for the HgTe growth at a substrate temperature of 160 C. X-ray diffraction measurements indicate that thin epitaxial layers are of high crystalline quality. Secondary-ion mass spectroscopy measurements show substantial In and Sb diffusion into the epitaxial layers with a concentration enhancement at the HgTe-CdTe interface. 9 references.

  11. Perspective: Rapid synthesis of complex oxides by combinatorial molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Bollinger, A. T.; Wu, J.; Božović, I.

    2016-05-01

    The molecular beam epitaxy (MBE) technique is well known for producing atomically smooth thin films as well as impeccable interfaces in multilayers of many different materials. In particular, molecular beam epitaxy is well suited to the growth of complex oxides, materials that hold promise for many applications. Rapid synthesis and high throughput characterization techniques are needed to tap into that potential most efficiently. We discuss our approach to doing that, leaving behind the traditional one-growth-one-compound scheme and instead implementing combinatorial oxide molecular beam epitaxy in a custom built system.

  12. Perspective: Rapid synthesis of complex oxides by combinatorial molecular beam epitaxy

    DOE PAGES

    A. T. Bollinger; Wu, J.; Bozovic, I.

    2016-03-15

    In this study, the molecular beam epitaxy(MBE) technique is well known for producing atomically smooth thin films as well as impeccable interfaces in multilayers of many different materials. In particular, molecular beam epitaxy is well suited to the growth of complex oxides, materials that hold promise for many applications. Rapid synthesis and high throughput characterization techniques are needed to tap into that potential most efficiently. We discuss our approach to doing that, leaving behind the traditional one-growth-one-compound scheme and instead implementing combinatorial oxide molecular beam epitaxy in a custom built system.

  13. Line-on-Line Coincidence: A New Type of Epitaxy Found in Organic-Organic Heterolayers

    NASA Astrophysics Data System (ADS)

    Mannsfeld, Stefan C.; Leo, Karl; Fritz, Torsten

    2005-02-01

    We propose a new type of epitaxy, line-on-line coincidence (LOL), which explains the ordering in the organic-organic heterolayer system PTCDA on HBC on graphite. LOL epitaxy is similar to point-on-line coincidence (POL) in the sense that all overlayer molecules lie on parallel, equally spaced lines. The key difference to POL is that these lines are not restricted to primitive lattice lines of the substrate lattice. Potential energy calculations demonstrate that this new type of epitaxy is indeed characterized by a minimum in the overlayer-substrate interaction potential.

  14. Mechanisms of growth and defect properties of epitaxial SiC

    NASA Astrophysics Data System (ADS)

    La Via, F.; Camarda, M.; La Magna, A.

    2014-09-01

    In the last ten years, large improvements in the epitaxial silicon carbide processes have been made. The introduction of chloride precursors, the epitaxial growth on large area substrate with low defect density, the improvement of the surface morphology, the understanding of the chemical vapour deposition (CVD) reactions, and epitaxial mechanisms by advanced simulations are just the main results obtained in the homo-epitaxy process of 4H-SiC. After this large stride in the process of SiC epitaxial growth, it is time to collect this knowledge in a review that can be a reference point for the future work in this interesting field. The structure of the review is the following. After an introduction on the evolution and history of the epitaxial growth of 4H-SiC, the main physics parameter of this epitaxial growth process is explained in detail using the traditional Burton-Cabrera-Franck theory and the experimental observations of the surface instability due to the off-axis growths. Then the introduction of chlorinated precursors in the epitaxial process is reviewed and the effect of this new process on Schottky diodes characteristics is shown. The improvement of the epitaxy process is strictly related to the improvement of the simulation of the growth that helps the researchers to understand the effect of different parameters on such complex system. Then, a large part of the review is devoted to the simulations of the CVD systems, the reaction in the gas phase of the different precursors and the surface reaction models. Also, some important results obtained by Monte Carlo simulation on the study of different growth parameters that influence the formation of defects and their evolution are reported. Finally, the influence of different process parameters and in particular of the growth rate on the formation or the reduction of the principal defects that are observed in the epitaxial layer is reviewed. We have divided these defects in four categories: 3D defects (epi

  15. Electron charging in epitaxial germanium quantum dots on silicon (100)

    NASA Astrophysics Data System (ADS)

    Ketharanathan, Sutharsan

    The electron charging behavior of self assembled epitaxial Ge quantum dots on Si(100) grown using molecular beam epitaxy has been studied. Ge quantum dots encapsulated in n-type Si matrix were incorporated into Schottky diodes to investigate their charging behavior using capacitance-voltage measurements. These experimental results were interpreted in the context of theoretical models to assess the degree of charge localization to the dot. Experiments involving Ge quantum dot growth, growth of Sb-doped Si and morphological evolution during encapsulation of the Ge dots during Si overgrowth were performed in order to optimize the conditions for obtaining distinct Ge quantum dot morphologies. This investigation included finding a suitable method to minimize Sb segregation while maintaining good dot epitaxy and overall crystal quality. Holes are confined to the Ge dots for which the valence band offsets are large (˜650 meV). Electrons are confined to the strained Si regions adjacent to the Ge quantum dots which have relatively smaller confinement potentials (˜100--150 meV). Experimentally, it was found that but and pyramid clusters in the range from 20--40 nm in diameter confine ˜1electron per dot while dome clusters in the range from 60--80 nm diameter confine ˜6--8 electrons per dot. Theoretical simulations predict that similar pyramid structures confine ˜0.4 electrons per dot and dome structures confine ˜2.2--3 electrons per dot. Even though the theory and the experimental results disagree due to various uncertainties and approximations, the ratio between theory and experiment agree remarkably well for both island types. We also investigated constructive three-dimensional nanolithography. Nanoscale Au rich dots and pure Ge dots were deposited on SiO2 and Si3N4 substrates by decomposing adsorbed precursors using a focused electron beam in an environmental transmission electron microscope. Dimethyl acetylacetonate gold was used for Au and digermane was used to

  16. 5f band dispersion in epitaxial films of UO2

    SciTech Connect

    Durakiewicz, Tomasz; Jia, Quanxi; Roy, Lindsay E; Martin, Richard L; Joyce, John J

    2009-01-01

    Polymer-assisted deposition of epitaxial films utilizes lattice pinning to produce films of very high stability and properties identical with bulk crystal. Dispersion of the 5f band is shown for the first time in a actinide Mott insulator system, which suggestes hybridization as a leading process in establishing the electronic structure. Hybrid density functional is succesfully employed to calculate the electronic structure of UO{sub 2} in agreement with experiments. UO{sub 2} continues to be a mysterious and elusive compound in terms of understanding the physical properties of a material. Most actinide oxides, including UO{sub 2} are predicted to be metallic. However, UO{sub 2} is an antiferromagnetic insulator with a relatively large gap of about 2eV. The f orbital charater of the excitations across the gap places UO{sub 2} in a Mott insulator category, but no states at the gap center have ever been measured directly, in spite of intensive efforts. In this work we present the first results of the electronic structure investigation of a epitaxial film of UO{sub 2}, where we find even more unexpected properties, like the dispersive nature of 5f bands. We also demonstrate the unexpected, very high stability of the epitaxial film of UO{sub 2}. In the lattice-pinning scheme, the crystalline nature of the film is preserved all the way up to the topmost layers even after prolonged exposure to atmospheric conditions. Hybridized, dispersive bands are common in the itinerant uranium compounds. One usually finds hybridization of f-orbitals with conduction band to be quite common in f-electron systems at low temperatures. Such bands may reside in the vicinity of the Fermi level and participate in the construction of the Fermi surface. However, in the insulator like UO{sub 2}, one expects a more atomic band nature, where f-bands are relatively flat and shifted away from the Fermi level by the gap energy scale. Precise location of UO{sub 2} on the localization

  17. Epitaxial Thin Films of Y doped HfO2

    NASA Astrophysics Data System (ADS)

    Serrao, Claudy; Khan, Asif; Ramamoorthy, Ramesh; Salahuddin, Sayeef

    Hafnium oxide (HfO2) is one of a few metal oxides that is thermodynamically stable on silicon and silicon oxide. There has been renewed interest in HfO2 due to the recent discovery of ferroelectricity and antiferroelectricity in doped HfO2. Typical ferroelectrics - such as strontium bismuth tantalate (SBT) and lead zirconium titanate (PZT) - contain elements that easily react with silicon and silicon oxide at elevated temperatures; therefore, such ferroelectrics are not suited for device applications. Meanwhile, ferroelectric HfO2 offers promise regarding integration with silicon. The stable phase of HfO2 at room temperature is monoclinic, but HfO2 can be stabilized in the tetragonal, orthorhombic or even cubic phase by suitable doping. We stabilized Y-doped HfO2 thin films using pulsed laser deposition. The strain state can be controlled using various perovskite substrates and controlled growth conditions. We report on Y-doped HfO2 domain structures from piezo-response force microscopy (PFM) and structural parameters via X-ray reciprocal space maps (RSM). We hope this work spurs further interest in strain-tuned ferroelectricity in doped HfO2.

  18. Pseudo-merohedral twinning and noncrystallographic symmetry in orthorhombic crystals of SIVmac239 Nef core domain bound to different-length TCRζ fragments

    SciTech Connect

    Kim, Walter M.; Sigalov, Alexander B.; Stern, Lawrence J.

    2010-02-01

    P2{sub 1}2{sub 1}2{sub 1} crystals of SIV Nef core domain bound to a peptide fragment of the T-cell receptor ζ subunit exhibited noncrystallographic symmetry and nearly perfect pseudo-merohedral twinning simulating tetragonal symmetry. For a different peptide fragment, nontwinned tetragonal crystals were observed but diffracted to lower resolution. The structure was determined after assignment of the top molecular-replacement solutions to various twin or NCS domains followed by refinement under the appropriate twin law. HIV/SIV Nef mediates many cellular processes through interactions with various cytoplasmic and membrane-associated host proteins, including the signalling ζ subunit of the T-cell receptor (TCRζ). Here, the crystallization strategy, methods and refinement procedures used to solve the structures of the core domain of the SIVmac239 isolate of Nef (Nef{sub core}) in complex with two different TCRζ fragments are described. The structure of SIVmac239 Nef{sub core} bound to the longer TCRζ polypeptide (Leu51–Asp93) was determined to 3.7 Å resolution (R{sub work} = 28.7%) in the tetragonal space group P4{sub 3}2{sub 1}2. The structure of SIVmac239 Nef{sub core} in complex with the shorter TCRζ polypeptide (Ala63–Arg80) was determined to 2.05 Å resolution (R{sub work} = 17.0%), but only after the detection of nearly perfect pseudo-merohedral crystal twinning and proper assignment of the orthorhombic space group P2{sub 1}2{sub 1}2{sub 1}. The reduction in crystal space-group symmetry induced by the truncated TCRζ polypeptide appears to be caused by the rearrangement of crystal-contact hydrogen-bonding networks and the substitution of crystallographic symmetry operations by similar noncrystallographic symmetry (NCS) operations. The combination of NCS rotations that were nearly parallel to the twin operation (k, h, −l) and a and b unit-cell parameters that were nearly identical predisposed the P2{sub 1}2{sub 1}2{sub 1} crystal form to pseudo

  19. Solvothermal synthesis and upconversion properties of about 10 nm orthorhombic LuF₃: Yb³⁺, Er³⁺ rectangular nanocrystals.

    PubMed

    Xiang, Guotao; Zhang, Jiahua; Hao, Zhendong; Zhang, Xia; Pan, Guo-Hui; Chen, Li; Luo, Yongshi; Lü, Shaozhe; Zhao, Haifeng

    2015-12-01

    The Yb(3+) and Er(3+) codoped orthorhombic LuF3 rectangular nanocrystals (NCs) with the size of about 10nm were synthesized by a facile and effective solvothermal process. X-ray diffraction (XRD), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), upconversion (UC) luminescence spectra and decay curves were used to characterize the resulting samples. Compared with YF3 and α-NaYF4 NCs, owning the similar size and the same doping levels of Yb(3+) ions and Er(3+) ions as LuF3 NCs, the green UC emission of LuF3 NCs is 18.7 times and 5.1 times stronger than that of YF3 and α-NaYF4 NCs respectively; the red UC emission of LuF3 NCs is 13.2 times and 0.6 times stronger than that of YF3 and α-NaYF4 NCs respectively. Under 980 nm wavelength excitation, the decay curves of both (4)S3/2→(4)I15/2 transition and (4)F9/2→(4)I15/2 transition exhibit a single exponential function, resulting from the fast energy migrations among Yb(3+) ions caused by the high concentration of Yb(3+) ions (20 mol%). Meanwhile, at relatively low power density, the slopes of the linear plots between log(I) and log(P) for green UC and red UC are 1.7 and 1.9 respectively, which are less than 2 due to the quenching of the thermal effect, indicating a two-photon process for them. At high power density, the slopes are decreased caused by the saturation effect. In addition, we proved the existence of the thermal effect by the pump power dependence of the intensity ratio of (2)H11/2→(4)I15/2 transition to (4)S3/2→(4)I15/2 transition. PMID:26298284

  20. Crystal structures of orthorhombic, hexagonal, and cubic compounds of the Sm{sub (x)}Yb{sub (2−x)}TiO{sub 5} series

    SciTech Connect

    Aughterson, Robert D.; Lumpkin, Gregory R.; Reyes, Massey de los; Sharma, Neeraj; Ling, Christopher D.; Gault, Baptiste; Smith, Katherine L.; Avdeev, Maxim; Cairney, Julie M.

    2014-05-01

    A series of single phase compounds with nominal stoichiometry Sm{sub (x)}Yb{sub (2−x)}TiO{sub 5} (x=2, 1.4, 1, 0.6, and 0) have been successfully fabricated to generate a range of crystal structures covering the most common polymorphs previously discovered in the Ln{sub 2}TiO{sub 5} series (Ln=lanthanides and yttrium). Four of the five samples have not been previously fabricated in bulk, single phase form so their crystal structures are refined and detailed using powder synchrotron and single crystal x-ray diffraction, neutron diffraction and transmission electron microscopy. Based on the phase information from diffraction data, there are four crystal structure types in this series; orthorhombic Pnma, hexagonal P6{sub 3}/mmc, cubic (pyrochlore-like) Fd-3m and cubic (fluorite-like) Fm-3m. The cubic materials show modulated structures with variation between long and short range ordering and the variety of diffraction techniques were used to describe these complex crystal structure types. - Graphical abstract: A high resolution image of the compound Sm{sub 0.6}Yb{sub 1.4}TiO{sub 5} showing contrast from lattice fringes and the corresponding fast Fourier transform (FFT) of the HREM image with pyrochlore related diffraction spots marked “P” and fluorite marked “F”. The crystal is oriented down the [1 1 0] zone axis based on the Fd-3m structure. The ideal crystal structure (no vacancies) of the cubic, pyrochlore-like (Sm{sub 0.6}Yb{sub 1.4}TiO{sub 5}). - Highlights: • First fabrication of bulk single-phase material with stoichiometry Sm{sub 2}TiO{sub 5}. • Systematic study of crystal structure types within Ln{sub 2}TiO{sub 5} series (Ln=lanthanides). • A novel technique using IFFT of HREM images to study cubic structures.

  1. High mobility epitaxial graphene devices via aqueous-ozone processing

    NASA Astrophysics Data System (ADS)

    Yager, Tom; Webb, Matthew J.; Grennberg, Helena; Yakimova, Rositsa; Lara-Avila, Samuel; Kubatkin, Sergey

    2015-02-01

    We find that monolayer epitaxial graphene devices exposed to aggressive aqueous-ozone processing and annealing became cleaner from post-fabrication organic resist residuals and, significantly, maintain their high carrier mobility. Additionally, we observe a decrease in carrier density from inherent strong n-type doping to extremely low p-type doping after processing. This transition is explained to be a consequence of the cleaning effect of aqueous-ozone processing and annealing, since the observed removal of resist residuals from SiC/G enables the exposure of the bare graphene to dopants present in ambient conditions. The resulting combination of charge neutrality, high mobility, large area clean surfaces, and susceptibility to environmental species suggest this processed graphene system as an ideal candidate for gas sensing applications.

  2. Epitaxial growth of cadmium sulfide films on silicon

    NASA Astrophysics Data System (ADS)

    Antipov, V. V.; Kukushkin, S. A.; Osipov, A. V.

    2016-03-01

    A 300-nm-thick cadmium sulfide epitaxial layer on silicon was grown for the first time. The grown was performed by the method of evaporation and condensation in a quasi-closed volume at a substrate temperature of 650°C and a growth time of 4 s. In order to avoid a chemical reaction between silicon and cadmium sulfide (at this temperature, the rate constant of the reaction is ~103) and to prevent etching of silicon by sulfur, a high-quality silicon carbide buffer layer ~100 nm thick was preliminarily synthesized by the substitution of atoms on the silicon surface. The ellipsometric, Raman, electron diffraction, and trace element analyses showed a high structural perfection of the CdS layer and the absence of a polycrystalline phase.

  3. Magnetic properties of epitaxial discontinuous Fe/MgO multilayers.

    PubMed

    García-García, A; Pardo, J A; Strichovanec, P; Magén, C; Vovk, A; De Teresa, J M; Kakazei, G N; Pogorelov, Yu G; Golub, V; Salyuk, O; Morellón, L; Algarabel, P A; Ibarra, M R

    2012-09-01

    We report magnetic, dynamic and transport properties of discontinuous metal-insulator multilayers Fe/MgO grown on amorphous Corning glass and single-crystalline MgO (001) substrates. The films of structure Substrate/MgO (3 nm)/[Fe (0.6 nm)/MgO (3.0 nm)] x 10 were prepared in ultra-high vacuum conditions using Pulsed Laser Deposition. It was shown that conditions of epitaxial growth are favorable for MgO substrates. As a result a substantial increase of tunneling magnetoresistance caused by spin-filtering effect was observed and reasonably theoretically explained. The value of TMR - 9.2% at room temperature in 18 kOe magnetic field is three times higher comparing to that for the samples grown on Corning glass substrates. PMID:23035505

  4. GaN quantum dots by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Daudin, B.; Adelmann, C.; Gogneau, N.; Sarigiannidou, E.; Monroy, E.; Fossard, F.; Rouvière, J. L.

    2004-03-01

    The conditions to grow GaN quantum dots (QDs) by plasma-assisted molecular beam epitaxy will be examined. It will be shown that, depending on the Ga/N ratio value, the growth mode of GaN deposited on AlN can be either of the Stranski-Krastanow (SK) or of the Frank-Van der Merwe type. Accordingly, quantum wells or QDs can be grown, depending on the desired application. In the particular case of modified SK growth mode, it will be shown that both plastic and elastic strain relaxation can coexist. Growth of GaN QDs with N-polarity will also be discussed and compared to their counterpart with Ga polarity.

  5. 90 K superconductivity of clean Pb1212 epitaxial films

    NASA Astrophysics Data System (ADS)

    Komori, S.; Kondo, A.; Kindo, K.; Kakeya, I.

    2016-08-01

    A single-phase {{Pb}}1-y{{Sr}}2{{{Y}}}1-x{{Ca}}x{{Cu}}2+y{{{O}}}7+δ (Pb1212) epitaxial film with {T}{{c,onset}}=90 {{K}} has been grown using a two-step technique, which allows lattice relaxation near the film/substrate interface and reduction of Pb vacancies. Using the upper critical field measurement, the coherence lengths are derived to be 20 and 4.3 Å, along the ab-plane and c-axis, respectively. The value of the irreversibility field is found to be close to that of YBa2Cu3O7. High magnetic field measurement has revealed normal state resistivity below {T}{{c}} and metallic behavior in the underdoped region.

  6. Conducting and interfacial properties of epitaxial SVO films

    NASA Astrophysics Data System (ADS)

    Ritums, D. L.; Wu, N. J.; Chen, X.; Liu, D.; Ignatiev, A.

    1998-01-01

    Epitaxial thin films (20-200 nm) of SrVO3 have been grown by pulsed laser deposition on Si, MgO, LaAlO3, and SrTiO3 substrates. These films range from insulating, to semiconducting, to metallic, depending on substrate and growth conditions, with resistivity found to be as low as 1 μΩ-cm for SrVO3 films deposited on a Si substrate with a YSZ buffer layer. This is comparable to 10 μΩ-cm for Pt. XPS depth profiling has been performed to study the interface reactions of the films and XRD studies have been done to determine the crystal structure of the films.

  7. Electronic cooling via interlayer Coulomb coupling in multilayer epitaxial graphene

    PubMed Central

    Mihnev, Momchil T.; Tolsma, John R.; Divin, Charles J.; Sun, Dong; Asgari, Reza; Polini, Marco; Berger, Claire; de Heer, Walt A.; MacDonald, Allan H.; Norris, Theodore B.

    2015-01-01

    In van der Waals bonded or rotationally disordered multilayer stacks of two-dimensional (2D) materials, the electronic states remain tightly confined within individual 2D layers. As a result, electron–phonon interactions occur primarily within layers and interlayer electrical conductivities are low. In addition, strong covalent in-plane intralayer bonding combined with weak van der Waals interlayer bonding results in weak phonon-mediated thermal coupling between the layers. We demonstrate here, however, that Coulomb interactions between electrons in different layers of multilayer epitaxial graphene provide an important mechanism for interlayer thermal transport, even though all electronic states are strongly confined within individual 2D layers. This effect is manifested in the relaxation dynamics of hot carriers in ultrafast time-resolved terahertz spectroscopy. We develop a theory of interlayer Coulomb coupling containing no free parameters that accounts for the experimentally observed trends in hot-carrier dynamics as temperature and the number of layers is varied. PMID:26399955

  8. Magnetic properties of epitaxial and polycrystalline Fe/Si multilayers

    SciTech Connect

    Chaiken, A.; Michel, R.P.; Wang, C.T.

    1995-08-01

    Fe/Si multilayers with antiferromagnetic interlayer coupling have been grown via ion-beam sputtering on both glass and single-crystal substrates. X-ray diffraction measurements show that both sets of films have crystalline iron silicide spacer layers and a periodic composition modulation. Films grown on glass have smaller crystallite sizes than those grown on single-crystal substrates and have a significant remanent magnetization. Films grown on single-crystal substrates have a smaller remanence. The observation of magnetocrystalline anisotropy in hysteresis loops and (hkl) peaks in x-ray diffraction demonstrates that the films grown on MgO and Ge are epitaxial. The smaller remanent magnetization in Fe/Si multilayers with better crystallinity suggests that the remanence is not intrinsic.

  9. Transport properties and electronic structure of epitaxial tunnel junctions

    NASA Astrophysics Data System (ADS)

    Freyss, M.; Papanikolaou, N.; Bellini, V.; Zeller, R.; Dederichs, P. H.; Turek, I.

    2002-02-01

    We present ab initio calculations for the electronic ground-state and transport properties of epitaxial Fe/semiconductor/Fe (0 0 1) tunnel junctions. The ground state properties are determined by the ab initio Screened KKR Green's function method and the transport properties by a Green's function formulation of the Landauer-Büttiker formalism. We focus on tunnel junctions with a semiconducting ZnSe barrier and compare them to results for junctions with Si and GaAs barriers. We comment on the presence of metal-induced gap states (MIGS) in the semiconductor, the spin polarization of which strongly depends on the nature of the barrier. We investigate furthermore the influence of one atomic layer at the interface of a non-magnetic metal (Cu, Ag, Al) and of a magnetic 3d transition metal.

  10. Controlling magnetic anisotropy in epitaxial FePt(001) films

    SciTech Connect

    Lu Zhihong; Walock, M. J.; LeClair, P.; Butler, W. H.; Mankey, G. J.

    2009-07-15

    Epitaxial equiatomic Fe{sub 50}Pt{sub 50} thin films with a variable order parameter ranging from 0 to 0.9 and Fe{sub 100-x}Pt{sub x} thin films with x ranging from 33 to 50 were deposited on MgO (001) substrates by dc sputtering. A seed layer consisting of nonmagnetic Cr (4 nm)/Pt (12 nm) was used to promote the crystallinity of the magnetic films. The crystal structure and magnetic properties were gauged using x-ray diffraction and magnetometry. The magnetic anisotropy can be controlled by changing the order parameter. For Fe{sub 100-x}Pt{sub x} films, the increase in Fe composition leads to an increase in coercivity in the hard axis loop and causes a loss of perpendicular anisotropy.

  11. InPBi Single Crystals Grown by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Wang, K.; Gu, Y.; Zhou, H. F.; Zhang, L. Y.; Kang, C. Z.; Wu, M. J.; Pan, W. W.; Lu, P. F.; Gong, Q.; Wang, S. M.

    2014-06-01

    InPBi was predicted to be the most robust infrared optoelectronic material but also the most difficult to synthesize within In-VBi (V = P, As and Sb) 25 years ago. We report the first successful growth of InPBi single crystals with Bi concentration far beyond the doping level by gas source molecular beam epitaxy. The InPBi thin films reveal excellent surface, structural and optical qualities making it a promising new III-V compound family member for heterostructures. The Bi concentration is found to be 2.4 +/- 0.4% with 94 +/- 5% Bi atoms at substitutional sites. Optical absorption indicates a band gap of 1.23 eV at room temperature while photoluminescence shows unexpectedly strong and broad light emission at 1.4-2.7 μm which can't be explained by the existing theory.

  12. Selective epitaxial growth of graphene on SiC

    SciTech Connect

    Camara, N.; Rius, G.; Godignon, P.; Huntzinger, J.-R.; Tiberj, A.; Camassel, J.

    2008-09-22

    We present a method of selective epitaxial growth of few layers graphene (FLG) on a ''prepatterned'' silicon carbide (SiC) substrate. The methods involves, successively, the sputtering of a thin aluminium nitride (AlN) layer on top of a monocrystalline SiC substrate and, then, patterning it with e-beam lithography and wet etching. The sublimation of few atomic layers of Si from the SiC substrate occurs only through the selectively etched AlN layer. The presence of the Raman G-band at {approx}1582 cm{sup -1} in the AlN-free areas is used to validate the concept. It gives absolute evidence of selective FLG growth.

  13. Selective epitaxial growth of graphene on SiC

    NASA Astrophysics Data System (ADS)

    Camara, N.; Rius, G.; Huntzinger, J.-R.; Tiberj, A.; Mestres, N.; Godignon, P.; Camassel, J.

    2008-09-01

    We present a method of selective epitaxial growth of few layers graphene (FLG) on a "prepatterned" silicon carbide (SiC) substrate. The methods involves, successively, the sputtering of a thin aluminium nitride (AlN) layer on top of a monocrystalline SiC substrate and, then, patterning it with e-beam lithography and wet etching. The sublimation of few atomic layers of Si from the SiC substrate occurs only through the selectively etched AlN layer. The presence of the Raman G-band at ˜1582cm-1 in the AlN-free areas is used to validate the concept. It gives absolute evidence of selective FLG growth.

  14. Single-molecule junctions with epitaxial graphene nanoelectrodes.

    PubMed

    Ullmann, Konrad; Coto, Pedro B; Leitherer, Susanne; Molina-Ontoria, Agustín; Martín, Nazario; Thoss, Michael; Weber, Heiko B

    2015-05-13

    On the way to ultraflat single-molecule junctions with transparent electrodes, we present a fabrication scheme based on epitaxial graphene nanoelectrodes. As a suitable molecule, we identified a molecular wire with fullerene anchor groups. With these two components, stable electrical characteristics could be recorded. Electrical measurements show that single-molecule junctions with graphene and with gold electrodes display a striking agreement. This motivated a hypothesis that the differential conductance spectra are rather insensitive to the electrode material. It is further corroborated by the assignment of asymmetries and spectral features to internal molecular degrees of freedom. The demonstrated open-access graphene electrodes and the electrode-insensitive molecules provide a model system that will allow for a thorough investigation of an individual single-molecule contact with additional probes.

  15. Nonlinear optical properties of calcium barium niobate epitaxial thin films.

    PubMed

    Bancelin, Stéphane; Vigne, Sébastien; Hossain, Nadir; Chaker, Mohammed; Légaré, François

    2016-07-25

    We investigate the potential of epitaxial calcium barium niobate (CBN) thin film grown by pulsed laser deposition for optical frequency conversion. Using second harmonic generation (SHG), we analyze the polarization response of the generated signal to determine the ratios d15 / d32 and d33 / d32 of the three independent components of the second-order nonlinear susceptibility tensor in CBN thin film. In addition, a detailed comparison to the signal intensity obtained in a y-cut quartz allows us to measure the absolute value of these components in CBN thin film: d15 = 5 ± 2 pm / V, d32 = 3.1 ± 0.6 pm / V and d33 = 9 ± 2 pm / V.

  16. Chemical beam epitaxy growth of III-V semiconductor nanowires

    NASA Astrophysics Data System (ADS)

    Mohummed Noori, Farah T.

    2013-12-01

    Indium- Arsenide (InAs) nanowires were grown in a high vacuum chemical beam epitaxy (CBE) unit on InAs(111) wafers substrates at 425-454°C. Two types of nanogold were used as orientation catalyst, 40nm and 80nm. The measurements were performed using scanning electron microscopy showed that uniform nanowires. The nanowires orient vertically in the InAs nanowire scanning electron microscopy of an array 80nm diameter InAs nanowire with length is in the range 0.5-1 μm and of an array 40nm diameter with length is in the range 0.3-0.7μm. The nanowire length with growth time shows that the linear increase of nanowires start to grow as soon as TMIn is available. The growth rate with temperature was studied.

  17. High-speed epitaxy using supersonic molecular jets

    SciTech Connect

    Eres, D.

    1990-01-01

    This paper discusses the use of supersonic jets of gaseous source molecules in thin films growth. Molecular jets in free form with no skimmers or collimators in the nozzle-substrate path were used in the investigation of basic film growth processes and in practical film growth applications. The Ge growth rates were found to depend linearly on the digermane jet intensity. Furthermore, the film thickness distributions showed excellent agreement with the distribution of digermane molecules in the jet. High epitaxial Ge growth rates were achieved on GaAs (100) substrates by utilizing high-intensity pulsed jets. The practical advantages and limitations of this film growth technique are evaluated, based on the results of microstructural and electrical measurements of heteroepitaxial Ge films on GaAs (100) substrates. 8 refs., 4 figs.

  18. RF Properties of Epitaxial Lift-Off HEMT Devices

    NASA Technical Reports Server (NTRS)

    Young, Paul G.; Alterovitz, Samuel A.; Mena, Rafael A.; Smith, Edwyn D.

    1993-01-01

    Epitaxial layers containing GaAs HEMT and P-HEMT structures have been lifted-off the GaAs substrate and attached to other host substrates using an AlAs parting layer. The devices were on-wafer RF probed before and after the lift-off step showing no degradation in the measured S-parameters. The maximum stable gain indicates a low frequency enhancement of the gain of 1-2 dB with some devices showing an enhancement of F(sub max)F(sub T) consistently shows an increase of 12-20% for all lifted-off HEMT structures. Comparison of the Hall measurements and small signal models show that the gain is improved and this is most probably associated with an enhanced carrier concentration.

  19. Magnetic x-ray dichroism in ultrathin epitaxial films

    SciTech Connect

    Tobin, J.G.; Goodman, K.W.; Cummins, T.R.

    1997-04-01

    The authors have used Magnetic X-ray Linear Dichroism (MXLD) and Magnetic X-ray Circular Dichroism (MXCD) to study the magnetic properties of epitaxial overlayers in an elementally specific fashion. Both MXLD and MXCD Photoelectron Spectroscopy were performed in a high resolution mode at the Spectromicroscopy Facility of the ALS. Circular Polarization was obtained via the utilization of a novel phase retarder (soft x-ray quarter wave plate) based upon transmission through a multilayer film. The samples were low temperature Fe overlayers, magnetic alloy films of NiFe and CoNi, and Gd grown on Y. The authors results include a direct comparison of high resolution angle resolved Photoelectron Spectroscopy performed in MXLD and MXCD modes as well as structural studies with photoelectron diffraction.

  20. Urbach absorption edge in epitaxial erbium-doped silicon

    SciTech Connect

    Shmagin, V. B. Kudryavtsev, K. E.; Shengurov, D. V.; Krasilnik, Z. F.

    2015-02-07

    We investigate the dependencies of the photocurrent in Si:Er p-n junctions on the energy of the incident photons. The exponential absorption edge (Urbach edge) just below fundamental edge of silicon was observed in the absorption spectra of epitaxial Si:Er layers grown at 400–600 C. It is shown that the introduction of erbium significantly enhances the structural disorder in the silicon crystal which was estimated from the slope of the Urbach edge. We discuss the possible nature of the structural disorder in Si:Er and a new mechanism of erbium excitation, which does not require the presence of deep levels in the band gap of silicon.

  1. Single-molecule junctions with epitaxial graphene nanoelectrodes.

    PubMed

    Ullmann, Konrad; Coto, Pedro B; Leitherer, Susanne; Molina-Ontoria, Agustín; Martín, Nazario; Thoss, Michael; Weber, Heiko B

    2015-05-13

    On the way to ultraflat single-molecule junctions with transparent electrodes, we present a fabrication scheme based on epitaxial graphene nanoelectrodes. As a suitable molecule, we identified a molecular wire with fullerene anchor groups. With these two components, stable electrical characteristics could be recorded. Electrical measurements show that single-molecule junctions with graphene and with gold electrodes display a striking agreement. This motivated a hypothesis that the differential conductance spectra are rather insensitive to the electrode material. It is further corroborated by the assignment of asymmetries and spectral features to internal molecular degrees of freedom. The demonstrated open-access graphene electrodes and the electrode-insensitive molecules provide a model system that will allow for a thorough investigation of an individual single-molecule contact with additional probes. PMID:25923590

  2. Thermoelectric imaging of structural disorder in epitaxial graphene.

    PubMed

    Cho, Sanghee; Kang, Stephen Dongmin; Kim, Wondong; Lee, Eui-Sup; Woo, Sung-Jae; Kong, Ki-Jeong; Kim, Ilyou; Kim, Hyeong-Do; Zhang, Tong; Stroscio, Joseph A; Kim, Yong-Hyun; Lyeo, Ho-Ki

    2013-10-01

    Heat is a familiar form of energy transported from a hot side to a colder side of an object, but not a notion associated with microscopic measurements of electronic properties. A temperature difference within a material causes charge carriers, electrons or holes to diffuse along the temperature gradient inducing a thermoelectric voltage. Here we show that local thermoelectric measurements can yield high-sensitivity imaging of structural disorder on the atomic and nanometre scales. The thermopower measurement acts to amplify the variations in the local density of states at the Fermi level, giving high differential contrast in thermoelectric signals. Using this imaging technique, we uncovered point defects in the first layer of epitaxial graphene, which generate soliton-like domain-wall line patterns separating regions of the different interlayer stacking of the second graphene layer.

  3. Epitaxial Electronic Oxides on Semiconductors Using Pulsed-Laser Deposition

    SciTech Connect

    Norton, D.P.; Budai, J.D.; Chisholm, M.F.

    1999-12-01

    We describe the growth and properties of epitaxial (OO1) CeO{sub 2} on a (001) Ge surface using a hydrogen-assisted pulsed-laser deposition method. Hydrogen gas is introduced during film growth to eliminate the presence of the GeOs from the semiconductor surface during the initial nucleation of the metal oxide film. The hydrogen partial pressure and substrate temperature are selected to be sufficiently high such that the germanium native oxides are thermodynamically unstable. The Gibbs free energy of CeO{sub 2} is larger in magnitude than that of the Ge native oxides, making it more favorable for the metal oxide to reside at the interface in comparison to the native Ge oxides. By satisfying these criteria. the metal oxide/semiconductor interface is shown to be atomically abrupt with no native oxide present. Preliminary structural and electrical properties are reported.

  4. Chemical beam epitaxy growth of III–V semiconductor nanowires

    SciTech Connect

    Mohummed Noori, Farah T.

    2013-12-16

    Indium- Arsenide (InAs) nanowires were grown in a high vacuum chemical beam epitaxy (CBE) unit on InAs(111) wafers substrates at 425–454°C. Two types of nanogold were used as orientation catalyst, 40nm and 80nm. The measurements were performed using scanning electron microscopy showed that uniform nanowires. The nanowires orient vertically in the InAs nanowire scanning electron microscopy of an array 80nm diameter InAs nanowire with length is in the range 0.5–1 μm and of an array 40nm diameter with length is in the range 0.3–0.7μm. The nanowire length with growth time shows that the linear increase of nanowires start to grow as soon as TMIn is available. The growth rate with temperature was studied.

  5. InPBi Single Crystals Grown by Molecular Beam Epitaxy

    PubMed Central

    Wang, K.; Gu, Y.; Zhou, H. F.; Zhang, L. Y.; Kang, C. Z.; Wu, M. J.; Pan, W. W.; Lu, P. F.; Gong, Q.; Wang, S. M.

    2014-01-01

    InPBi was predicted to be the most robust infrared optoelectronic material but also the most difficult to synthesize within In-VBi (V = P, As and Sb) 25 years ago. We report the first successful growth of InPBi single crystals with Bi concentration far beyond the doping level by gas source molecular beam epitaxy. The InPBi thin films reveal excellent surface, structural and optical qualities making it a promising new III–V compound family member for heterostructures. The Bi concentration is found to be 2.4 ± 0.4% with 94 ± 5% Bi atoms at substitutional sites. Optical absorption indicates a band gap of 1.23 eV at room temperature while photoluminescence shows unexpectedly strong and broad light emission at 1.4–2.7 μm which can't be explained by the existing theory. PMID:24965260

  6. Argon-assisted growth of epitaxial graphene on Cu(111)

    NASA Astrophysics Data System (ADS)

    Robinson, Zachary R.; Tyagi, Parul; Mowll, Tyler R.; Ventrice, Carl A., Jr.; Hannon, James B.

    2012-12-01

    The growth of graphene by catalytic decomposition of ethylene on Cu(111) in an ultrahigh vacuum system was investigated with low-energy electron diffraction, low-energy electron microscopy, and atomic force microscopy. Attempts to form a graphene overlayer using ethylene at pressures as high as 10 mTorr and substrate temperatures as high as 900 ∘C resulted in almost no graphene growth. By using an argon overpressure, the growth of epitaxial graphene on Cu(111) was achieved. The suppression of graphene growth without the use of an argon overpressure is attributed to Cu sublimation at elevated temperatures. During the initial stages of growth, a random distribution of rounded graphene islands is observed. The predominant rotational orientation of the islands is within ±1∘ of the Cu(111) substrate lattice.

  7. Hard gap in epitaxial semiconductor-superconductor nanowires

    NASA Astrophysics Data System (ADS)

    Chang, W.; Albrecht, S. M.; Jespersen, T. S.; Kuemmeth, F.; Krogstrup, P.; Nygård, J.; Marcus, C. M.

    2015-03-01

    Many present and future applications of superconductivity would benefit from electrostatic control of carrier density and tunnelling rates, the hallmark of semiconductor devices. One particularly exciting application is the realization of topological superconductivity as a basis for quantum information processing. Proposals in this direction based on the proximity effect in semiconductor nanowires are appealing because the key ingredients are currently in hand. However, previous instances of proximitized semiconductors show significant tunnelling conductance below the superconducting gap, suggesting a continuum of subgap states—a situation that nullifies topological protection. Here, we report a hard superconducting gap induced by the proximity effect in a semiconductor, using epitaxial InAs-Al semiconductor-superconductor nanowires. The hard gap, together with favourable material properties and gate-tunability, makes this new hybrid system attractive for a number of applications, as well as fundamental studies of mesoscopic superconductivity.

  8. Nonlinear optical properties of calcium barium niobate epitaxial thin films.

    PubMed

    Bancelin, Stéphane; Vigne, Sébastien; Hossain, Nadir; Chaker, Mohammed; Légaré, François

    2016-07-25

    We investigate the potential of epitaxial calcium barium niobate (CBN) thin film grown by pulsed laser deposition for optical frequency conversion. Using second harmonic generation (SHG), we analyze the polarization response of the generated signal to determine the ratios d15 / d32 and d33 / d32 of the three independent components of the second-order nonlinear susceptibility tensor in CBN thin film. In addition, a detailed comparison to the signal intensity obtained in a y-cut quartz allows us to measure the absolute value of these components in CBN thin film: d15 = 5 ± 2 pm / V, d32 = 3.1 ± 0.6 pm / V and d33 = 9 ± 2 pm / V. PMID:27464195

  9. Recent Advances in Pulsed Laser Deposition of Epitaxial Layers

    NASA Astrophysics Data System (ADS)

    Venkatesan, T.

    1997-03-01

    While pulsed laser deposition became popular with the emergance of high temperature superconductors the technique has been rapidly deployed in the development of a number of other oxide materials such as ferroelectric titanates, colossal magneto-resistive manganites, electro-optic tantalates and niobates(Pulsed Laser Deposition of Thin Films, eds. D.B. Chrisey and G.K. Hubler, John Wiley and Sons, New York, 1994.). Most recently this technique has also been used succesfully for the fabrication of a variety of semiconductor materials such as sulfides and nitrides with the Group II and Group III cationic species respectively. Details on the fabrication of a hetero-epitaxial family of AlN (Eg = 6.2 eV), GaN (Eg = 3.6 eV) and TiN (metallic with ρ = 14 μΩ-cm) on sapphire substrates will be discussed. Interesting results in the integration of oxides both as buffer layers for improved epitaxy on sapphire as well as conducting layers for both Ohmic and Schottky contacts on the nitrides will be discussed. Some recent details on the elimination of particles in the fabricated films by the use of off-axis deposition and by the use of a shadow mask and scalling issues will be elaborated on. Work in collaboration with R. Ramesh, R. P. Sharma, M. Rajeswari, Z. W. Dong, Z. Trajanovic, V. Talyanski, R. D. Vispute, L. Salamanca-Riba, (UMD); K. Jones, M. Wood, R. Lareau (ARL-SEDD, Fort Monmouth); M. Spenser (Howard U); S. M. Green, S. Harshavardhan and A. Pique (Neocera, Inc.).

  10. Shape-defined nanodimers by tailored heterometallic epitaxy

    NASA Astrophysics Data System (ADS)

    García-Negrete, Carlos A.; Rojas, Teresa C.; Knappett, Benjamin R.; Jefferson, David A.; Wheatley, Andrew E. H.; Fernández, Asunción

    2014-09-01

    The systematic construction of heterogeneous nanoparticles composed of two distinct metal domains (Au and Pt) and exhibiting a broad range of morphologically defined shapes is reported. It is demonstrated that careful Au overgrowth on Pt nanocrystal seeds with shapes mainly corresponding to cubeoctahedra, octahedra and octapods can lead to heterometallic systems whose intrinsic structures result from specific epitaxial relationships such as {111} + {111}, {200} + {200} and {220} + {220}. Comprehensive analysis shows also that nanoparticles grown from octahedral seeds can be seen as comprising of four Au tetrahedral subunits and one Pt octahedral unit in a cyclic arrangement that is similar to the corresponding one in decahedral gold nanoparticles. However, in the present case, the multi-component system is characterized by a broken five-fold rotational symmetry about the [011] axis. This set of bimetallic dimers could provide new platforms for fuel cell catalysts and plasmonic devices.The systematic construction of heterogeneous nanoparticles composed of two distinct metal domains (Au and Pt) and exhibiting a broad range of morphologically defined shapes is reported. It is demonstrated that careful Au overgrowth on Pt nanocrystal seeds with shapes mainly corresponding to cubeoctahedra, octahedra and octapods can lead to heterometallic systems whose intrinsic structures result from specific epitaxial relationships such as {111} + {111}, {200} + {200} and {220} + {220}. Comprehensive analysis shows also that nanoparticles grown from octahedral seeds can be seen as comprising of four Au tetrahedral subunits and one Pt octahedral unit in a cyclic arrangement that is similar to the corresponding one in decahedral gold nanoparticles. However, in the present case, the multi-component system is characterized by a broken five-fold rotational symmetry about the [011] axis. This set of bimetallic dimers could provide new platforms for fuel cell catalysts and plasmonic devices

  11. Epitaxially grown layered MFI-bulk MFI hybrid zeolitic materials.

    PubMed

    Kim, Wun-gwi; Zhang, Xueyi; Lee, Jong Suk; Tsapatsis, Michael; Nair, Sankar

    2012-11-27

    The synthesis of hybrid zeolitic materials with complex micropore-mesopore structures and morphologies is an expanding area of recent interest for a number of applications. Here we report a new type of hybrid zeolite material, composed of a layered zeolite material grown epitaxially on the surface of a bulk zeolite material. Specifically, layered (2-D) MFI sheets were grown on the surface of bulk MFI crystals of different sizes (300 nm and 10 μm), thereby resulting in a hybrid material containing a unique morphology of interconnected micropores (∼0.55 nm) and mesopores (∼3 nm). The structure and morphology of this material, referred to as a "bulk MFI-layered MFI" (BMLM) material, was elucidated by a combination of XRD, TEM, HRTEM, SEM, TGA, and N(2) physisorption techniques. It is conclusively shown that epitaxial growth of the 2-D layered MFI sheets occurs in at least two principal crystallographic directions of the bulk MFI crystal and possibly in the third direction as well. The BMLM material combines the properties of bulk MFI (micropore network and mechanical support) and 2-D layered MFI (large surface roughness, external surface area, and mesoporosity). As an example of the uses of the BMLM material, it was incorporated into a polyimide and fabricated into a composite membrane with enhanced permeability for CO(2) and good CO(2)/CH(4) selectivity for gas separations. SEM-EDX imaging and composition analysis showed that the polyimide and the BMLM interpenetrate into each other, thereby forming a well-adhered polymer/particle microstructure, in contrast with the defective interfacial microstructure obtained using bare MFI particles. Analysis of the gas permeation data with the modified Maxwell model also allows the estimation of the effective volume of the BMLM particles, as well as the CO(2) and CH(4) gas permeabilities of the interpenetrated layer at the BMLM/polyimide interface.

  12. Metallic impurities in gallium nitride grown by molecular beam epitaxy

    SciTech Connect

    McHugo, S.A.; Krueger, J.; Kisielowski, C.

    1997-04-01

    Transition metals are often encountered in trace amounts in semiconductors. They have been extensively studied in most elemental and compound systems, since they form deep donor and/or acceptor levels which usually degrade the electronic and optical material properties. Only very little is known about transition metals in recent III-V semiconducting materials, such as GaN, AlN and InN. These few studies have been done exclusively on Metal-Organic Chemical Vapor Deposition (MOCVD) or Hybrid Vapor Phase Epitaxy HVPE-grown GaN. Preliminary x-ray fluorescence studies at the Advanced Light Source, beamline 10.3.1, Lawrence Berkeley National Laboratory have revealed that GaN materials grown by Molecular Beam Epitaxy (MBE) have Fe, Ni and Cr as the dominant transition metal contaminants. This finding is commensurate with the extremely high concentrations of hydrogen, carbon and oxygen (up to 10{sup 20} cm{sup {minus}3}) measured by Secondary Ion Mass Spectroscopy (SIMS). Preliminary work using the mapping capabilities of the x-ray fluorescence microprobe revealed the metal impurities were inhomogeneously distributed over the film. Future work of this collaboration will be to find a correlation between the existence of transition metals in MBE films, as revealed by x-ray fluorescence, and Photoluminescence (PL) spectra taken in the infrared region. Also, the authors will make use of the 1 {mu}m spatial resolution of x-ray microprobe to locate the contaminants in relation to structural defects in the GaN films. Because of the large strain caused by the lattice mismatch between the GaN films and the substrates, the films grow in a columnar order with high densities of grain boundaries and dislocations. These structural defects offer preferential sites for metal precipitation or agglomeration which could degrade the optical properties of this material more so than if the impurities were left dissolved in the GaN.

  13. Epitaxial approaches to long-wavelength vertical-cavity lasers

    NASA Astrophysics Data System (ADS)

    Hall, Eric Michael

    The success of short-wavelength (850 nm) vertical-cavity surface-emitting lasers (VCSELs) as low-cost components in fiber optic networks has created a strong demand for similar low-cost devices at longer wavelengths (1.3--1.55mum), which are even more important in telecommunications systems. Extending the success of VCSELs to these longer wavelengths, however, has been slowed by the absence of a mature technology that incorporates all of the necessary components on one substrate without sacrificing the inexpensive and manufacturable nature of VCSELs. Although InAlGaAs active regions on InP substrates have been developed extensively, the other components of vertical-cavity lasers, especially epitaxially-grown distributed Bragg reflectors (DBRs), are less mature on these substrates. This thesis examines the materials and technologies that enable long-wavelength VCSELs to be grown in a single, epitaxial, lattice-matched step on InP substrates. The advantages and shortcomings of each material system are identified and the impact on devices examined. Additionally, processing technologies that rely on the properties of these materials are developed. From these studies, a InP-based, lattice-matched VCSEL design is presented that utilizes AlGaAsSb for high reflectivity DBRs, InAlGaAs for high quality active regions, InP for heat and current spreading, and a materials selective etch for electrical and optical confinement. In short, the design avoids the shortcomings of each material system while emphasizing the advantages. The resulting devices, showing low threshold currents, high efficiencies and powers, and high operating temperatures, not only validate this approach but demonstrate that such lattice-matched, InP-based devices may be a low-cost, manufacturable answer to this long-wavelength VCSEL demand.

  14. Understanding controls on interfacial wetting at epitaxial graphene: Experiment and Theory

    SciTech Connect

    Zhou, Hua; Ganesh, Panchapakesan; Presser, Volker; Wander, Matthew C; Fenter, Paul; Kent, Paul R; Jiang, Deen; Chialvo, Ariel A; Mcdonough, John; Shuford, Kevin L; Gogotsi, Yury G.

    2012-01-01

    The interaction of interfacial water with graphitic carbon at the atomic scale is studied as a function of the hydrophobicity of epitaxial graphene. High resolution x-ray reflectivity shows that the graphene-water contact angle is controlled by the average graphene thickness, due to the fraction of the film surface expressed as the epitaxial buffer layer whose contact angle (contact angle c = 73 ) is substantially smaller than that of multilayer graphene ( c = 93 ). Classical and ab initio molecular dynamics simulations show that the reduced contact angle of the buffer layer is due to both its epitaxy with the SiC substrate and the presence of interfacial defects. This insight clarifies the relationship between interfacial water structure and hydrophobicity, in general, and suggests new routes to control interface properties of epitaxial graphene.

  15. Radio-Frequency Performance of Epitaxial Graphene Field-Effect Transistors on Sapphire Substrates

    NASA Astrophysics Data System (ADS)

    Liu, Qing-Bin; Yu, Cui; Li, Jia; Song, Xu-Bo; He, Ze-Zhao; Lu, Wei-Li; Gu, Guo-Dong; Wang, Yuan-Gang; Feng, Zhi-Hong

    2014-07-01

    We report dc and the first-ever measured small signal rf performance of epitaxial graphene field-effect transistors (GFETs), where the epitaxial graphene is grown by chemical vapor deposition (CVD) on a 2-inch c-plane sapphire substrate. Our epitaxial graphene material has a good flatness and uniformity due to the low carbon concentration during the graphene growth. With a gate length Lg = 100 nm, the maximum drain source current Ids and peak transconductance gm reach 0.92 A/mm and 0.143 S/mm, respectively, which are the highest results reported for GFETs directly grown on sapphire. The extrinsic cutoff frequency (fT) and maximum oscillation frequency (fmax) of the device are 12 GHz and 9.5 GHz, and up to 32 GHz and 21.5 GHz after de-embedding, respectively. Our work proves that epitaxial graphene on sapphire substrates is a promising candidate for rf electronics.

  16. Epitaxy of Ge-Sb-Te phase-change memory alloys

    SciTech Connect

    Braun, Wolfgang; Shayduk, Roman; Flissikowski, Timur; Ramsteiner, Manfred; Grahn, Holger T.; Riechert, Henning; Fons, Paul; Kolobov, Alex

    2009-01-26

    The authors demonstrate the epitaxy of Ge-Sb-Te alloys close to the Ge{sub 2}Sb{sub 2}Te{sub 5} composition on GaSb(001). Using molecular beam epitaxy with elemental sources, amorphous films are obtained at growth temperatures below 120 deg. C and films with a cubic structure and a predominant cube-on-cube epitaxial relationship above 180 deg. C. Using a high-power pulsed laser, the epitaxial films are switched between the crystalline and the amorphous phases. Streaks in the diffraction data help to resolve the apparent ambiguity in interatomic distances between earlier x-ray absorption and powder diffraction measurements. The structural changes are confirmed by Raman spectroscopy.

  17. Understanding controls on interfacial wetting at epitaxial graphene: Experiment and theory

    NASA Astrophysics Data System (ADS)

    Zhou, Hua; Ganesh, P.; Presser, Volker; Wander, Matthew C. F.; Fenter, Paul; Kent, Paul R. C.; Jiang, De-En; Chialvo, Ariel A.; McDonough, John; Shuford, Kevin L.; Gogotsi, Yury

    2012-01-01

    The interaction of interfacial water with graphitic carbon at the atomic scale is studied as a function of the hydrophobicity of epitaxial graphene. High resolution x-ray reflectivity shows that the graphene-water contact angle is controlled by the average graphene thickness, due to the fraction of the film surface expressed as the epitaxial buffer layer whose contact angle (contact angle θc = 73°) is substantially smaller than that of multilayer graphene (θc = 93°). Classical and ab initio molecular dynamics simulations show that the reduced contact angle of the buffer layer is due to both its epitaxy with the SiC substrate and the presence of interfacial defects. This insight clarifies the relationship between interfacial water structure and hydrophobicity, in general, and suggests new routes to control interface properties of epitaxial graphene.

  18. High rate epitaxy of silicon thick films by medium pressure plasma chemical vapor deposition

    NASA Astrophysics Data System (ADS)

    Kambara, M.; Yagi, H.; Sawayanagi, M.; Yoshida, T.

    2006-04-01

    Homoepitaxial silicon thick films have been produced by medium pressure plasma chemical vapor deposition at rates as fast as 60 nm/s and at a temperature of around 700 °C, with a silane gas partial pressure of 4 mTorr. The continuous transition of the film structures from agglomerated to faceted columnar and to epitaxial planar structure was observed with an increase in the plasma power. The calorimetric analysis during deposition has also confirmed that the thermal boundary layer thickness between the plasma and substrate reduced with the increasing power and became comparable to the mean free path of the vapors when epitaxy was achieved at high rates. In addition, the rate for epitaxial growth was observed to increase linearly with silane gas partial pressure. These potentially indicate that less coagulated silicon atom clusters formed in the reduced boundary thickness have contributed effectively to the high rate epitaxial growth.

  19. Understanding controls on interfacial wetting at epitaxial graphene: Experiment and Theory

    SciTech Connect

    Kent, Paul R

    2011-01-01

    The interaction of interfacial water with graphitic carbon at the atomic scale is studied as a function of the hydrophobicity of epitaxial graphene. High resolution x-ray reflectivity shows that the graphene-water contact angle is controlled by the average graphene thickness, due to the fraction of the film surface expressed as the epitaxial buffer layer whose contact angle (contact angle {Theta}{sub c} = 73{sup o}) is substantially smaller than that of multilayer graphene ({Theta}{sub c} = 93{sup o}). Classical and ab initio molecular dynamics simulations show that the reduced contact angle of the buffer layer is due to both its epitaxy with the SiC substrate and the presence of interfacial defects. This insight clarifies the relationship between interfacial water structure and hydrophobicity, in general, and suggests new routes to control interface properties of epitaxial graphene.

  20. The role of Energy Deposition in the Epitaxial Layer in Triggering SEGR in Power MOSFETs

    NASA Technical Reports Server (NTRS)

    Selva, L.; Swift, G.; Taylor, W.; Edmonds, L.

    1999-01-01

    In these SEGR experiments, three identical-oxide MOSFET types were irradiated with six ions of significantly different ranges. Results show the prime importance of the total energy deposited in the epitaxial layer.

  1. Epitaxial growth of III-V compounds for electroluminescent light sources

    NASA Technical Reports Server (NTRS)

    Chu, T. L.; Smeltzer, R. K.

    1973-01-01

    The epitaxial growth techniques used in the fabrication of III-V compound electroluminescent devices are reviewed. Both vapor and liquid phase epitaxial techniques are discussed, including the applications of these techniques to well established materials as well as newer materials. The state of the art of light-emitting devices fabricated from members of the III-V compounds and their solid solutions is also reviewed.

  2. Pinhole-free growth of epitaxial CoSi.sub.2 film on Si(111)

    NASA Technical Reports Server (NTRS)

    Lin, True-Lon (Inventor); Fathauer, Robert W. (Inventor); Grunthaner, Paula J. (Inventor)

    1991-01-01

    Pinhole-free epitaxial CoSi.sub.2 films (14') are fabricated on (111)-oriented silicon substrates (10) with a modified solid phase epitaxy technique which utilizes (1) room temperature stoichiometric (1:2) codeposition of Co and Si followed by (2) room temperature deposition of an amorphous silicon capping layer (16), and (3) in situ annealing at a temperature ranging from about 500.degree. to 750.degree. C.

  3. Characterization of silicon-germanium epitaxial layer by photoluminescence intensity and reflectance measurement techniques.

    PubMed

    Back, Dohyun; Lee, Jaehyeong

    2014-12-01

    Si(1-x)Ge(x) epitaxial layers with various Ge fractions sample were characterized by photoluminescence intensity method at room temperature. Photoluminescence intensity was affected by minority carrier lifetime, defect density, and surface condition. PL intensity profile showed misfit dislocation on epitaxial layer for 15%, 21%, 24%, and 26%, since dislocations were one of minority carrier lifetime degradation parameters. It clearly showed misfit dislocation profiles, cross-hatch, and PL intensity was low at dislocation region.

  4. Growth and characterization of epitaxial fcc Fe wedges on diamond (100).

    SciTech Connect

    Bader, S. D.; Keavneu, D. J.; Keune, W.; Li, D.; Pearson, J.

    1997-12-05

    Epitaxial Fe wedges with a thickness gradation from 0--20 {angstrom} were grown on diamond(100) at room temperature, subsequently annealed, and investigated with reflection high-energy electron diffraction and the surface magneto-optical Kerr effect. The results indicate that for <5 monolayer thicknesses the Fe grows on C(100) as smooth, epitaxial fcc films, which are not ferromagnetic, but that thicker films undergo a transition to become rough and the ordinary bcc ferromagnetic phase.

  5. Van der Waals epitaxial double heterostructure: InAs/single-layer graphene/InAs.

    PubMed

    Hong, Young Joon; Yang, Jae Won; Lee, Wi Hyoung; Ruoff, Rodney S; Kim, Kwang S; Fukui, Takashi

    2013-12-17

    Van der Waals (vdW) epitaxial double heterostructures have been fabricated by vdW epitaxy of InAs nanostructures on both sides of graphene. InAs nanostructures diametrically form on/underneath graphene exclusively along As-polar direction, indicating polarity inversion of the double heterostructures. First-principles and density functional calculations demonstrate how and why InAs easily form to be double heterostructures with polarity inversion.

  6. Slip propagation in epitaxial Mo (011) studied by low-energy electron microscopy

    NASA Astrophysics Data System (ADS)

    Mundschau, M.; Swięch, W.; Durfee, C. S.; Flynn, C. P.

    1999-10-01

    We report observations of slip processes in epitaxial films of Mo (011) grown on sapphire by molecular beam epitaxy. Low-energy electron microscopy is employed to follow the time evolution of the screw dislocation, the interfacial dislocation, and the surface step edge structure through which the slip takes place. Under certain conditions the dislocation system is observed to trap briefly as it meets successive surface steps.

  7. Choice of Substrate Material for Epitaxial CdTe Solar Cells

    SciTech Connect

    Song, Tao; Kanevce, Ana; Sites, James R.

    2015-06-14

    Epitaxial CdTe with high quality, low defect density, and high carrier concentration should in principle yield high-efficiency photovoltaic devices. However, insufficient effort has been given to explore the choice of substrate for high-efficiency epitaxial CdTe solar cells. In this paper, we use numerical simulations to investigate three crystalline substrates: silicon (Si), InSb, and CdTe each substrate material are generally discussed.

  8. Defect Formation in GaN Epitaxial Layers due to SHI Irradiation

    SciTech Connect

    Kumar, Ashish; Kumar, V.; Singh, R.; Kanjilal, D.

    2011-07-15

    GaN epitaxial layers were irradiated with 200 MeV swift heavy Ag ions at various fluences. These samples were then characterized by XRD and TEM. Increase in peak width (FWHM) with incident ion dose showed reduction in crystallinity of epitaxial layers. Cross sectional TEM images confirmed that at highest fluence (5x10{sup 12} ions/cm{sup 2}) electronic energy loss process caused structural defect formation in GaN layer.

  9. Epitaxial growth of molecular crystals on van der waals substrates for high-performance organic electronics.

    PubMed

    Lee, Chul-Ho; Schiros, Theanne; Santos, Elton J G; Kim, Bumjung; Yager, Kevin G; Kang, Seok Ju; Lee, Sunwoo; Yu, Jaeeun; Watanabe, Kenji; Taniguchi, Takashi; Hone, James; Kaxiras, Efthimios; Nuckolls, Colin; Kim, Philip

    2014-05-01

    Epitaxial van der Waals (vdW) heterostructures of organic and layered materials are demonstrated to create high-performance organic electronic devices. High-quality rubrene films with large single-crystalline domains are grown on h-BN dielectric layers via vdW epitaxy. In addition, high carrier mobility comparable to free-standing single-crystal counterparts is achieved by forming interfacial electrical contacts with graphene electrodes. PMID:24458727

  10. Direct growth of graphene on in situ epitaxial hexagonal boron nitride flakes by plasma-assisted molecular beam epitaxy

    SciTech Connect

    Xu, Zhongguang; Zheng, Renjing; Khanaki, Alireza; Zuo, Zheng; Liu, Jianlin

    2015-11-23

    Hexagonal boron nitride (h-BN) single-crystal domains were grown on cobalt (Co) substrates at a substrate temperature of 850–900 °C using plasma-assisted molecular beam epitaxy. Three-point star shape h-BN domains were observed by scanning electron microscopy, and confirmed by Raman and X-ray photoelectron spectroscopy. The h-BN on Co template was used for in situ growth of multilayer graphene, leading to an h-BN/graphene heterostructure. Carbon atoms preferentially nucleate on Co substrate and edges of h-BN and then grow laterally to form continuous graphene. Further introduction of carbon atoms results in layer-by-layer growth of graphene on graphene and lateral growth of graphene on h-BN until it may cover entire h-BN flakes.

  11. Strain-Tunable Magnetocrystalline Anisotropy in Epitaxial Y3 Fe5 O12 Thin Films

    NASA Astrophysics Data System (ADS)

    Wang, Hailong; Du, Chunhui; Hammel, P. Chris; Yang, Fengyuan

    2014-03-01

    Magnetocrystalline anisotropy plays an essential role in many applications and there is intense interest in understanding the role of magnetoelastic coupling in phonon-magnon interactions in thermal spintronics. It is important to understand magnetocrystalline anisotropy in the presence of lattice distortion induced by epitaxial strain and the underlying magnetization-lattice coupling. Y3Fe5O12 (YIG) has been widely used in microwave applications and spin pumping. Most YIG epitaxial film fabrication has employed Gd3Ga5O12 (GGG) substrates with nearly perfect lattice match. In order to probe the magnetocrystalline anisotropy and control magnetization by epitaxial strain in epitaxial YIG films, we grow YIG epitaxial thin films on (001)-oriented Y3Al5O12 (YAG) substrate with -3.0% lattice mismatch. We demonstrate strain-tuning of magnetocrystalline anisotropy over a range of more than one thousand Gauss in epitaxial YIG films of excellent crystalline quality grown on YAG substrates. Ferromagnetic resonance (FMR) measurements reveal a linear dependence of both out-of-plane and in-plane uniaxial anisotropy on the strain-induced tetragonal distortion of Y3Fe5O12. Importantly, we find the spin mixing conductance determined from inverse spin Hall effect and FMR linewidth broadening remains large in Pt/YIG/YAG heterostructures, quite comparable to the value found in Pt/YIG grown on lattice-matched GGG substrates.

  12. Silicon epitaxy on H-terminated Si (100) surfaces at 250 °C

    NASA Astrophysics Data System (ADS)

    Deng, Xiao; Namboodiri, Pradeep; Li, Kai; Wang, Xiqiao; Stan, Gheorghe; Myers, Alline F.; Cheng, Xinbin; Li, Tongbao; Silver, Richard M.

    2016-08-01

    Low temperature Si epitaxy has become increasingly important due to its critical role in the encapsulation and performance of buried nanoscale dopant devices. We demonstrate epitaxial growth up to nominally 25 nm, at 250 °C, with analysis at successive growth steps using STM and cross section TEM to reveal the nature and quality of the epitaxial growth. STM images indicate that growth morphology of both Si on Si and Si on H-terminated Si (H: Si) is epitaxial in nature at temperatures as low as 250 °C. For Si on Si growth at 250 °C, we show that the Si epitaxial growth front maintains a constant morphology after reaching a specific thickness threshold. Although the in-plane mobility of silicon is affected on the H: Si surface due to the presence of H atoms during initial sub-monolayer growth, STM images reveal long range order and demonstrate that growth proceeds by epitaxial island growth albeit with noticeable surface roughening.

  13. Molecular beam epitaxy and metalorganic chemical vapor deposition growth of epitaxial CdTe on (100) GaAs/Si and (111) GaAs/Si substrates

    NASA Technical Reports Server (NTRS)

    Nouhi, A.; Radhakrishnan, G.; Katz, J.; Koliwad, K.

    1988-01-01

    Epitaxial CdTe has been grown on both (100)GaAs/Si and (111)GaAs/Si substrates. A combination of molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) has been employed for the first time to achieve this growth: the GaAs layers are grown on Si substrates by MBE and the CdTe film is subsequently deposited on GaAs/Si by MOCVD. The grown layers have been characterized by X-ray diffraction, scanning electron microscopy, and photoluminescence.

  14. Structure–property relations of orthorhombic [(CH{sub 3}){sub 3}NCH{sub 2}COO]{sub 2}(CuCl{sub 2}){sub 3}·2H{sub 2}O

    SciTech Connect

    Haussühl, Eiken; Schreuer, Jürgen; Wiehl, Leonore; Paulsen, Natalia

    2014-04-01

    Large single crystals of orthorhombic [(CH{sub 3}){sub 3}NCH{sub 2}COO]{sub 2}(CuCl{sub 2}){sub 3}·2H{sub 2}O with dimensions up to 40×40×30 mm{sup 3} were grown from aqueous solutions. The elastic and piezoelastic coefficients were derived from ultrasonic resonance frequencies and their shifts upon variation of pressure, respectively, using the plate-resonance technique. Additionally, the coefficients of thermal expansion were determined between 95 K and 305 K by dilatometry. The elastic behaviour at ambient conditions is dominated by the 2-dimensional network of strong hydrogen bonds within the (001) plane leading to a corresponding pseudo-tetragonal anisotropy of the longitudinal elastic stiffness. The variation of elastic properties with pressure, however, as well as the thermal expansion shows strong deviations from the pseudo-tetragonal symmetry. These deviations are probably correlated with tilts of the elongated tri-nuclear betaine–CuCl{sub 2}–water complexes. Neither the thermal expansion nor the specific heat capacity gives any hint on a phase transition in the investigated temperature range. - Graphical abstract: Single crystal of orthorhombic [(CH{sub 3}){sub 3}NCH{sub 2}COO]{sub 2}(CuCl{sub 2}){sub 3}·2H{sub 2}O. - Highlights: • Large single crystals (40 ×40 ×30 mm{sup 3}) of [(CH{sub 3}){sub 3}NCH{sub 2}COO]{sub 2}(CuCl{sub 2}){sub 3}·2H{sub 2}O were grown. • The elastic and piezoelastic coefficients were derived from ultrasonic resonance frequencies. • Thermal expansion (95 K–305 K) and heat capacity (113 K–323 K) were determined. • The orthorhombic structure shows pseudo-tetragonal elastic anisotropy at ambient conditions. • The crystal structure is stable in the investigated range (1–1600 bar, 95–303 K)

  15. Solution phase van der Waals epitaxy of ZnO wire arrays

    NASA Astrophysics Data System (ADS)

    Zhu, Yue; Zhou, Yong; Bakti Utama, Muhammad Iqbal; Mata, María De La; Zhao, Yanyuan; Zhang, Qing; Peng, Bo; Magen, Cesar; Arbiol, Jordi; Xiong, Qihua

    2013-07-01

    As an incommensurate epitaxy, van der Waals epitaxy allows defect-free crystals to grow on substrates even with a large lattice mismatch. Furthermore, van der Waals epitaxy is proposed as a universal platform where heteroepitaxy can be achieved irrespective of the nature of the overlayer material and the method of crystallization. Here we demonstrate van der Waals epitaxy in solution phase synthesis for seedless and catalyst-free growth of ZnO wire arrays on phlogopite mica at low temperature. A unique incommensurate interface is observed even with the incomplete initial wetting of ZnO onto the substrate. Interestingly, the imperfect contacting layer does not affect the crystalline and optical properties of other parts of the wires. In addition, we present patterned growth of a well-ordered array with hexagonal facets and in-plane alignment. We expect our seedless and catalyst-free solution phase van der Waals epitaxy synthesis to be widely applicable in other materials and structures.As an incommensurate epitaxy, van der Waals epitaxy allows defect-free crystals to grow on substrates even with a large lattice mismatch. Furthermore, van der Waals epitaxy is proposed as a universal platform where heteroepitaxy can be achieved irrespective of the nature of the overlayer material and the method of crystallization. Here we demonstrate van der Waals epitaxy in solution phase synthesis for seedless and catalyst-free growth of ZnO wire arrays on phlogopite mica at low temperature. A unique incommensurate interface is observed even with the incomplete initial wetting of ZnO onto the substrate. Interestingly, the imperfect contacting layer does not affect the crystalline and optical properties of other parts of the wires. In addition, we present patterned growth of a well-ordered array with hexagonal facets and in-plane alignment. We expect our seedless and catalyst-free solution phase van der Waals epitaxy synthesis to be widely applicable in other materials and structures

  16. Growth mechanisms for Si epitaxy on O atomic layers: Impact of O-content and surface structure

    NASA Astrophysics Data System (ADS)

    Jayachandran, Suseendran; Billen, Arne; Douhard, Bastien; Conard, Thierry; Meersschaut, Johan; Moussa, Alain; Caymax, Matty; Bender, Hugo; Vandervorst, Wilfried; Heyns, Marc; Delabie, Annelies

    2016-10-01

    The epitaxial growth of Si layers on Si substrates in the presence of O atoms is generally considered a challenge, as O atoms degrade the epitaxial quality by generating defects. Here, we investigate the growth mechanisms for Si epitaxy on O atomic layers (ALs) with different O-contents and structures. O ALs are deposited by ozone (O3) or oxygen (O2) exposure on H-terminated Si at 50 °C and 300 °C respectively. Epitaxial Si is deposited by chemical vapor deposition using silane (SiH4) at 500 °C. After O3 exposure, the O atoms are uniformly distributed in Si-Si dimer/back bonds. This O layer still allows epitaxial seeding of Si. The epitaxial quality is enhanced by lowering the surface distortions due to O atoms and by decreasing the arrival rate of SiH4 reactants, allowing more time for surface diffusion. After O2 exposure, the O atoms are present in the form of SiOx clusters. Regions of hydrogen-terminated Si remain present between the SiOx clusters. The epitaxial seeding of Si in these structures is realized on H-Si regions, and an epitaxial layer grows by a lateral overgrowth mechanism. A breakdown in the epitaxial ordering occurs at a critical Si thickness, presumably by accumulation of surface roughness.

  17. Epitaxial growth of B-doped high quality diamond film on cBN surface by chemical vapor deposition

    SciTech Connect

    Zou, G.T.; Gao, C.X.; Zhang, T.C.

    1995-12-31

    B-doped high quality diamond epitaxial films have been obtained on high-pressure synthesized cBN crystals by dc glow discharge chemical vapor deposition (CVD). The deposition conditions and the orientation of cBN crystal are important to diamond oriented nucleation and epitaxial growth. The micro-Raman spectroscopy measurement indicates that the quality of the diamond film grown on cBN (100) surface is close to that of natural diamond. The scanning electron microscopy (SEM) observation shows that the epitaxial film has very smooth surface. The specific resistance of the B-doped epitaxial film is about 0.1 ohm{center_dot}cm.

  18. Density functional theory modeling of multilayer "epitaxial" graphene oxide.

    PubMed

    Zhou, Si; Bongiorno, Angelo

    2014-11-18

    CONSPECTUS: Graphene oxide (GO) is a complex material of both fundamental and applied interest. Elucidating the structure of GO is crucial to achieve control over its properties and technological applications. GO is a nonstoichiometric and hygroscopic material with a lamellar structure, and its physical chemical properties depend critically on synthesis procedures and postsynthesis treatments. Numerous efforts are in place to both understand and exploit this versatile layered carbon material. This Account reports on recent density functional theory (DFT) studies of "epitaxial" graphene oxide (hereafter EGO), a type of GO obtained by oxidation of graphene films grown epitaxially on silicon carbide. Here, we rely on selected X-ray photoelectron spectroscopy (XPS), infrared spectroscopy (IR), and X-ray diffraction (XRD) measurements of EGO, and we discuss in great detail how we utilized DFT-based techniques to project out from the experimental data basic atomistic information about the chemistry and structure of these films. This Account provides an example as to how DFT modeling can be used to elucidate complex materials such as GO from a limited set of experimental information. EGO exhibits a uniform layered structure, consisting of a stack of graphene planes hosting predominantly epoxide and hydroxyl groups, and water molecules intercalated between the oxidized carbon layers. Here, we first focus on XPS measurements of EGO, and we use DFT to generate realistic model structures, calculate core-level chemical shifts, and through the comparison with experiment, gain insight on the chemical composition and metastability characteristics of EGO. DFT calculations are then used to devise a simplistic but accurate simulation scheme to study thermodynamic and kinetic stability and to predict the intralayer structure of EGO films aged at room temperature. Our simulations show that aged EGO encompasses layers with nanosized oxidized domains presenting a high concentration of

  19. Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask

    NASA Astrophysics Data System (ADS)

    Puybaret, Renaud; Patriarche, Gilles; Jordan, Matthew B.; Sundaram, Suresh; El Gmili, Youssef; Salvestrini, Jean-Paul; Voss, Paul L.; de Heer, Walt A.; Berger, Claire; Ougazzaden, Abdallah

    2016-03-01

    We report the growth of high-quality triangular GaN nanomesas, 30-nm thick, on the C-face of 4H-SiC using nanoselective area growth (NSAG) with patterned epitaxial graphene grown on SiC as an embedded mask. NSAG alleviates the problems of defects in heteroepitaxy, and the high mobility graphene film could readily provide the back low-dissipative electrode in GaN-based optoelectronic devices. A 5-8 graphene-layer film is first grown on the C-face of 4H-SiC by confinement-controlled sublimation of silicon carbide. Graphene is then patterned and arrays of 75-nm-wide openings are etched in graphene revealing the SiC substrate. A 30-nm-thick GaN is subsequently grown by metal organic vapor phase epitaxy. GaN nanomesas grow epitaxially with perfect selectivity on SiC, in the openings patterned through graphene. The up-or-down orientation of the mesas on SiC, their triangular faceting, and cross-sectional scanning transmission electron microscopy show that they are biphasic. The core is a zinc blende monocrystal surrounded with single-crystal wurtzite. The GaN crystalline nanomesas have no threading dislocations or V-pits. This NSAG process potentially leads to integration of high-quality III-nitrides on the wafer scalable epitaxial graphene/silicon carbide platform.

  20. Orthorhombic YBaCo{sub 4}O{sub 8.4} crystals as a result of saturation of hexagonal YBaCo{sub 4}O{sub 7} crystals with oxygen

    SciTech Connect

    Podberezskaya, N. V.; Bolotina, N. B.; Komarov, V. Yu. Kameneva, M. Yu.; Kozeeva, L. P.; Lavrov, A. N.; Smolentsev, A. I.

    2015-07-15

    Hexagonal YBaCo{sub 4}O{sub 7} crystals (sp. gr. P6{sub 3}mc, a{sub h} = 6.3058(4) Å, c{sub h} = 10.2442(7) Å, Z = 2) are saturated with oxygen to the YBaCo{sub 4}O{sub 8.4} composition and studied by X-ray diffraction (XRD) analysis. The saturation is completed by a structural first-order phase transition to orthorhombic crystals (sp. gr. Pbc2{sub 1}, a{sub o} = 31.8419(2) Å, b{sub o} = 10.9239(5) Å, c{sub o} = 10.0960(5) Å, Z = 20). The connection of two lattices is expressed in terms of the action of matrix (500/120/001) on the hexagonal basis. Five structural fragments of the same type but with different degrees of order alternate along the long axis of the oxygen-saturated orthorhombic structure. The XRD data on single crystals differ from the results obtained by other researchers on ceramic samples; possible causes of these differences are discussed.

  1. Microdomain patterns from directional eutectic solidification and epitaxy

    PubMed

    De Rosa C; Park; Thomas; Lotz

    2000-05-25

    Creating a regular surface pattern on the nanometre scale is important for many technological applications, such as the periodic arrays constructed by optical microlithography that are used as separation media in electrophoresis, and island structures used for high-density magnetic recording devices. Block copolymer patterns can also be used for lithography on length scales below 30 nanometres (refs 3-5). But for such polymers to prove useful for thin-film technologies, chemically patterned surfaces need to be made substantially defect-free over large areas, and with tailored domain orientation and periodicity. So far, control over domain orientation has been achieved by several routes, using electric fields, temperature gradients, patterned substrates and neutral confining surfaces. Here we describe an extremely fast process that leads the formation of two-dimensional periodic thin films having large area and uniform thickness, and which possess vertically aligned cylindrical domains each containing precisely one crystalline lamella. The process involves rapid solidification of a semicrystalline block copolymer from a crystallizable solvent between glass substrates using directional solidification and epitaxy. The film is both chemically and structurally periodic, thereby providing new opportunities for more selective and versatile nanopatterned surfaces.

  2. Nanoporous Silica Templated HeteroEpitaxy: Final LDRD Report.

    SciTech Connect

    Burckel, David Bruce; Koleske, Daniel; Rowen, Adam M.; Williams, John Dalton; Fan, Hongyou; Arrington, Christian Lew

    2006-11-01

    This one-year out-of-the-box LDRD was focused on exploring the use of porous growth masks as a method for defect reduction during heteroepitaxial crystal growth. Initially our goal was to investigate porous silica as a growth mask, however, we expanded the scope of the research to include several other porous growth masks on various size scales, including mesoporous carbon, and the UV curable epoxy, SU-8. Use of SU-8 as a growth mask represents a new direction, unique in the extensive literature of patterned epitaxial growth, and presents the possibility of providing a single step growth mask. Additional research included investigation of pore viability via electrochemical deposition into high aspect ratio photoresist patterns and pilot work on using SU-8 as a DUV negative resist, another significant potential result. While the late start nature of this project pushed some of the initial research goals out of the time table, significant progress was made. 3 Acknowledgements This work was performed in part at the Nanoscience @ UNM facility, a member of the National Nanotechnology Infrastructure Network, which is supported by the National Science Foundation (Grant ECS 03-35765). Sandia is multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United Stated Department of Energy's National Nuclear Security Administration under Contract DE-AC04-94AL85000. This work was supported under the Sandia LDRD program (Project 99405). 4

  3. Ferroelastic twin structures in epitaxial WO3 thin films

    NASA Astrophysics Data System (ADS)

    Yun, Shinhee; Woo, Chang-Su; Kim, Gi-Yeop; Sharma, Pankaj; Lee, Jin Hong; Chu, Kanghyun; Song, Jong Hyun; Chung, Sung-Yoon; Seidel, Jan; Choi, Si-Young; Yang, Chan-Ho

    2015-12-01

    Tungsten trioxide is a binary oxide that has potential applications in electrochromic windows, gas sensors, photo-catalysts, and superconductivity. Here, we analyze the crystal structure of atomically flat epitaxial layers on YAlO3 single crystal substrates and perform nanoscale investigations of the ferroelastic twins revealing a hierarchical structure at multiple length scales. We have found that the finest stripe ferroelastic twin walls along pseudocubic <100> axes are associated with cooperative mosaic rotations of the monoclinic films and the larger stripe domains along pseudocubic <110> axes are created to reduce the misfit strain through a commensurate matching of an effective in-plane lattice parameter between film and substrate. The typical widths of the two fine and larger stripe domains increase with film thickness following a power law with scaling exponents of ˜0.6 and ˜0.4, respectively. We have also found that the twin structure can be readily influenced by illumination with an electron beam or a tip-based mechanical compression.

  4. Density functional investigation of epitaxial silicene on semiconducting substrates

    NASA Astrophysics Data System (ADS)

    Das, G. P.; Bhattacharya, A.; Bhattacharya, S.

    2013-03-01

    In spite of the uniqueness of carbon to form pristine fullerene, nanotube and graphene, there have been attempts to replicate these nanostructures with silicon. Most recently, the free-standing quasi-2D honeycomb structure of silicene has been predicted to be stable with linear band dispersion and Dirac cone feature similar to graphene. Epitaxial silicene on Ag(110) and on ZrB2(0001) substrates have already been reported. We have carried out first principles density functional investigation of the structural and electronic properties of silicene monolayer on various wurzite structured III-V and II-VI semiconducting substrates, with metal terminated (MT) as well as non-metal terminated (NMT) top surface. The binding energies of silicene on MT semiconductors are in the range 0.5 - 0.7 eV/atom and their behavior can be metallic, semi-metallic or even magnetic, depending on the choice of substrates. The silicene overlayer undergoes n-/p-type doping on MT/NMT semiconductor surface, depending upon the direction of the charge transfer.

  5. Real-time observation of epitaxial graphene domain reorientation

    SciTech Connect

    Thuermer, Konrad; Foster, Michael E.; Bartelt, Norman Charles; Rogge, Paul C.; McCarty, Kevin F.; Dubon, Oscar D.; Bartelt, Norman C.

    2015-04-20

    Graphene films grown by vapour deposition tend to be polycrystalline due to the nucleation and growth of islands with different in-plane orientations. Here, using low-energy electron microscopy, we find that micron-sized graphene islands on Ir(111) rotate to a preferred orientation during thermal annealing. We observe three alignment mechanisms: the simultaneous growth of aligned domains and dissolution of rotated domains, that is, ‘ripening’; domain boundary motion within islands; and continuous lattice rotation of entire domains. By measuring the relative growth velocity of domains during ripening, we estimate that the driving force for alignment is on the order of 0.1 meV per C atom and increases with rotation angle. A simple model of the orientation-dependent energy associated with the moiré corrugation of the graphene sheet due to local variations in the graphene–substrate interaction reproduces the results. This study suggests new strategies for improving the van der Waals epitaxy of 2D materials.

  6. Exceptional gettering response of epitaxially grown kerfless silicon

    DOE PAGES

    Powell, D. M.; Markevich, V. P.; Hofstetter, J.; Jensen, M. A.; Morishige, A. E.; Castellanos, S.; Lai, B.; Peaker, A. R.; Buonassisi, T.

    2016-02-08

    The bulk minority-carrier lifetime in p- and n-type kerfless epitaxial (epi) crystalline silicon wafers is shown to increase >500 during phosphorus gettering. We employ kinetic defect simulations and microstructural characterization techniques to elucidate the root cause of this exceptional gettering response. Simulations and deep-level transient spectroscopy (DLTS) indicate that a high concentra- tion of point defects (likely Pt) is “locked in” during fast (60 C/min) cooling during epi wafer growth. The fine dispersion of moderately fast-diffusing recombination-active point defects limits as-grown lifetime but can also be removed during gettering, confirmed by DLTS measurements. Synchrotron-based X-ray fluorescence microscopy indicates metal agglomeratesmore » at structural defects, yet the structural defect density is sufficiently low to enable high lifetimes. Consequently, after phosphorus diffusion gettering, epi silicon exhibits a higher lifetime than materials with similar bulk impurity contents but higher densities of structural defects, including multicrystalline ingot and ribbon silicon materials. As a result, device simulations suggest a solar-cell efficiency potential of this material >23%.« less

  7. Real-time observation of epitaxial graphene domain reorientation

    DOE PAGES

    Thuermer, Konrad; Foster, Michael E.; Bartelt, Norman Charles; Rogge, Paul C.; Lawrence Berkeley National Lab.; McCarty, Kevin F.; Dubon, Oscar D.; Lawrence Berkeley National Lab.; Bartelt, Norman C.

    2015-04-20

    Graphene films grown by vapour deposition tend to be polycrystalline due to the nucleation and growth of islands with different in-plane orientations. Here, using low-energy electron microscopy, we find that micron-sized graphene islands on Ir(111) rotate to a preferred orientation during thermal annealing. We observe three alignment mechanisms: the simultaneous growth of aligned domains and dissolution of rotated domains, that is, ‘ripening’; domain boundary motion within islands; and continuous lattice rotation of entire domains. By measuring the relative growth velocity of domains during ripening, we estimate that the driving force for alignment is on the order of 0.1 meV permore » C atom and increases with rotation angle. A simple model of the orientation-dependent energy associated with the moiré corrugation of the graphene sheet due to local variations in the graphene–substrate interaction reproduces the results. This study suggests new strategies for improving the van der Waals epitaxy of 2D materials.« less

  8. Exceptional gettering response of epitaxially grown kerfless silicon

    NASA Astrophysics Data System (ADS)

    Powell, D. M.; Markevich, V. P.; Hofstetter, J.; Jensen, M. A.; Morishige, A. E.; Castellanos, S.; Lai, B.; Peaker, A. R.; Buonassisi, T.

    2016-02-01

    The bulk minority-carrier lifetime in p- and n-type kerfless epitaxial (epi) crystalline silicon wafers is shown to increase >500× during phosphorus gettering. We employ kinetic defect simulations and microstructural characterization techniques to elucidate the root cause of this exceptional gettering response. Simulations and deep-level transient spectroscopy (DLTS) indicate that a high concentration of point defects (likely Pt) is "locked in" during fast (60 °C/min) cooling during epi wafer growth. The fine dispersion of moderately fast-diffusing recombination-active point defects limits as-grown lifetime but can also be removed during gettering, confirmed by DLTS measurements. Synchrotron-based X-ray fluorescence microscopy indicates metal agglomerates at structural defects, yet the structural defect density is sufficiently low to enable high lifetimes. Consequently, after phosphorus diffusion gettering, epi silicon exhibits a higher lifetime than materials with similar bulk impurity contents but higher densities of structural defects, including multicrystalline ingot and ribbon silicon materials. Device simulations suggest a solar-cell efficiency potential of this material >23%.

  9. Pulsed organometallic beam epitaxy of complex oxide films

    SciTech Connect

    Duray, S.J.; Buchholz, D.B.; Song, S.N.; Richeson, D.S.; Ketterson, J.B.; Marks, T.J.; Chang, R.P.H. )

    1991-09-16

    We report the results of a pulsed organometallic beam epitaxy (POMBE) process for growing complex oxide films at low background gas pressure (10{sup {minus}4}--10{sup {minus}2} Torr) and low substrate temperature (600--680 {degree}C) using organometallic precursors in an oxygen plasma environment. Our results show that POMBE can extend the capability of organometallic chemical vapor deposition to growing complex oxide films with high precision both in composition and structure without the need for post-deposition oxidation and heat treatments. The growth of phase-pure, highly oriented Y-Ba-Cu-O superconducting oxide films {l brace}({ital T}{sub {ital c}} ({ital R}=0)=90.5 K) and {ital J}{sub {ital c}} (77 K, 50 K gauss)=1.1{times}10{sup 5} A/cm{sup 2}{r brace} is given as an example. Similar to the pulsed laser deposition process, the POMBE method has the potential for {ital in} {ital situ} processing of multilayer structures (e.g., junctions).

  10. Transparent Conductive Two-Dimensional Titanium Carbide Epitaxial Thin Films

    PubMed Central

    2014-01-01

    Since the discovery of graphene, the quest for two-dimensional (2D) materials has intensified greatly. Recently, a new family of 2D transition metal carbides and carbonitrides (MXenes) was discovered that is both conducting and hydrophilic, an uncommon combination. To date MXenes have been produced as powders, flakes, and colloidal solutions. Herein, we report on the fabrication of ∼1 × 1 cm2 Ti3C2 films by selective etching of Al, from sputter-deposited epitaxial Ti3AlC2 films, in aqueous HF or NH4HF2. Films that were about 19 nm thick, etched with NH4HF2, transmit ∼90% of the light in the visible-to-infrared range and exhibit metallic conductivity down to ∼100 K. Below 100 K, the films’ resistivity increases with decreasing temperature and they exhibit negative magnetoresistance—both observations consistent with a weak localization phenomenon characteristic of many 2D defective solids. This advance opens the door for the use of MXenes in electronic, photonic, and sensing applications. PMID:24741204

  11. Strain control of oxygen vacancies in epitaxial strontium cobaltite films

    DOE PAGES

    Jeen, Hyoung Jeen; Choi, Woo Seok; Reboredo, Fernando A.; Freeland, John W.; Eres, Gyula; Lee, Ho Nyung; Petrie, Jonathan R.; Mitra, Chandrima; Meyer, Tricia L.

    2016-01-25

    In this study, the ability to manipulate oxygen anion defects rather than metal cations in complex oxides can facilitate creating new functionalities critical for emerging energy and device technologies. However, the difficulty in activating oxygen at reduced temperatures hinders the deliberate control of important defects, oxygen vacancies. Here, strontium cobaltite (SrCoOx) is used to demonstrate that epitaxial strain is a powerful tool for manipulating the oxygen vacancy concentration even under highly oxidizing environments and at annealing temperatures as low as 300 °C. By applying a small biaxial tensile strain (2%), the oxygen activation energy barrier decreases by ≈30%, resulting inmore » a tunable oxygen deficient steady-state under conditions that would normally fully oxidize unstrained cobaltite. These strain-induced changes in oxygen stoichiometry drive the cobaltite from a ferromagnetic metal towards an antiferromagnetic insulator. The ability to decouple the oxygen vacancy concentration from its typical dependence on the operational environment is useful for effectively designing oxides materials with a specific oxygen stoichiometry.« less

  12. Epitaxial growth in dislocation-free strained asymmetric alloy films

    SciTech Connect

    Desai, Rashmi C.; Kim, Ho Kwon; Chatterji, Apratim; Ngai, Darryl; Chen Si; Yang Nan

    2010-06-15

    Epitaxial growth in strained asymmetric, dislocation-free, coherent, alloy films is explored. Linear-stability analysis is used to theoretically analyze the coupled instability arising jointly from the substrate-film lattice mismatch (morphological instability) and the spinodal decomposition mechanism. Both the static and growing films are considered. Role of various parameters in determining stability regions for a coherent growing alloy film is investigated. In addition to the usual parameters: lattice mismatch {epsilon}, solute-expansion coefficient {eta}, growth velocity V, and growth temperature T, we consider the alloy asymmetry arising from its mean composition. The dependence of elastic moduli on composition fluctuations and the coupling between top surface and underlying bulk of the film also play important roles. The theory is applied to group III-V films such as GaAsN, InGaN, and InGaP and to group IV Si-Ge films at temperatures below the bare critical temperature T{sub c} for strain-free spinodal decomposition. The dependences of various material parameters on mean concentration and temperature lead to significant qualitative changes.

  13. Lattice-Polarity-Driven Epitaxy of Hexagonal Semiconductor Nanowires.

    PubMed

    Wang, Ping; Yuan, Ying; Zhao, Chao; Wang, Xinqiang; Zheng, Xiantong; Rong, Xin; Wang, Tao; Sheng, Bowen; Wang, Qingxiao; Zhang, Yongqiang; Bian, Lifeng; Yang, Xuelin; Xu, Fujun; Qin, Zhixin; Li, Xinzheng; Zhang, Xixiang; Shen, Bo

    2016-02-10

    Lattice-polarity-driven epitaxy of hexagonal semiconductor nanowires (NWs) is demonstrated on InN NWs. In-polarity InN NWs form typical hexagonal structure with pyramidal growth front, whereas N-polarity InN NWs slowly turn to the shape of hexagonal pyramid and then convert to an inverted pyramid growth, forming diagonal pyramids with flat surfaces and finally coalescence with each other. This contrary growth behavior driven by lattice-polarity is most likely due to the relatively lower growth rate of the (0001̅) plane, which results from the fact that the diffusion barriers of In and N adatoms on the (0001) plane (0.18 and 1.0 eV, respectively) are about 2-fold larger in magnitude than those on the (0001̅) plane (0.07 and 0.52 eV), as calculated by first-principles density functional theory (DFT). The formation of diagonal pyramids for the N-polarity hexagonal NWs affords a novel way to locate quantum dot in the kink position, suggesting a new recipe for the fabrication of dot-based devices.

  14. Epitaxial Brownmillerite Oxide Thin Films for Reliable Switching Memory.

    PubMed

    Acharya, Susant K; Nallagatla, Raveendra Venkata; Togibasa, Octolia; Lee, Bo W; Liu, Chunli; Jung, Chang U; Park, Bae Ho; Park, Ji-Yong; Cho, Yunae; Kim, Dong-Wook; Jo, Janghyun; Kwon, Deok-Hwang; Kim, Miyoung; Hwang, Cheol Seong; Chae, Seung C

    2016-03-01

    Resistive switching memory, which is mostly based on polycrystalline thin films, suffers from wide distributions in switching parameters-including set voltage, reset voltage, and resistance-in their low- and high-resistance states. One of the most commonly used methods to overcome this limitation is to introduce inhomogeneity. By contrast, in this paper, we obtained uniform resistive switching parameters and sufficiently low forming voltage by maximizing the uniformity of an epitaxial thin film. To achieve this result, we deposited an SrFeOx/SrRuO3 heteroepitaxial structure onto an SrTiO3 (001) substrate by pulsed laser deposition, and then we deposited an Au top electrode by electron-beam evaporation. This device exhibited excellent bipolar resistance switching characteristics, including a high on/off ratio, narrow distribution of key switching parameters, and long data retention time. We interpret these phenomena in terms of a local, reversible phase transformation in the SrFeOx film between brownmillerite and perovskite structures. Using the brownmillerite structure and atomically uniform thickness of the heteroepitaxial SrFeOx thin film, we overcame two major hurdles in the development of resistive random-access memory devices: high forming voltage and broad distributions of switching parameters.

  15. Fluorination of epitaxial oxides: Creating ferrite and nickelate oxyfluoride films

    NASA Astrophysics Data System (ADS)

    May, Steven; Moon, Eun; Xie, Yujun; Keavney, David; Goebel, Justin; Laird, Eric; Li, Christopher

    2013-03-01

    In ABO3 perovskites, the physical properties are directly coupled to the nominal valence state of the B-site cation. In epitaxial thin films, the dominant strategy to control B-site valence is through the selection of a di- or trivalent cation on the A-site. However, this approach is limited, particularly when electron doping on the B-site is desired. Here we report a simple method for realizing oxyfluoride films, where the substitution of F for O is expected to reduce the B-site valence, providing a new means to tune electronic, optical and magnetic properties in thin films. Fluorination is achieved by spin coating an oxygen deficient film with poly(vinylidene fluoride). The film/polymer bilayer is then annealed, promoting the diffusion of F into the film. We have used this method to synthesize SrFeO3-δFδ and LaNiO3-δFδ (δ ? 0.5) films, as confirmed by x-ray photoemission spectroscopy and x-ray absorption spectroscopy. This work is supported by the U. S. Army Research Office under grant number W911NF-12-1-0132. Work at the Advanced Photon Source is supported by the U.S. Department of Energy (DOE), Office of Basic Energy Sciences under contract DE-AC02-06CH11357.

  16. Mini array of quantum Hall devices based on epitaxial graphene

    NASA Astrophysics Data System (ADS)

    Novikov, S.; Lebedeva, N.; Hämäläinen, J.; Iisakka, I.; Immonen, P.; Manninen, A. J.; Satrapinski, A.

    2016-05-01

    Series connection of four quantum Hall effect (QHE) devices based on epitaxial graphene films was studied for realization of a quantum resistance standard with an up-scaled value. The tested devices showed quantum Hall plateaux RH,2 at a filling factor v = 2 starting from a relatively low magnetic field (between 4 T and 5 T) when the temperature was 1.5 K. The precision measurements of quantized Hall resistance of four QHE devices connected by triple series connections and external bonding wires were done at B = 7 T and T = 1.5 K using a commercial precision resistance bridge with 50 μA current through the QHE device. The results showed that the deviation of the quantized Hall resistance of the series connection of four graphene-based QHE devices from the expected value of 4×RH,2 = 2 h/e2 was smaller than the relative standard uncertainty of the measurement (<1 × 10-7) limited by the used resistance bridge.

  17. Epitaxial growth of ordered and disordered granular sphere packings.

    PubMed

    Panaitescu, Andreea; Kudrolli, Arshad

    2014-09-01

    We demonstrate that epitaxy can be used to obtain a wide range of ordered to disordered granular packings by simply changing the deposition flux. We show that a defect-free face-centered-cubic (fcc) monocrystal can be obtained by depositing athermal granular spheres randomly into a container with a templated surface in a gravitational field without direct manipulation. This packing corresponds to the maximum sphere packing fraction and is obtained when the substrate is templated corresponding to the (100) plane of a fcc crystal and the container side is an integer multiple of the sphere diameter. We find that the maximum sphere packing is obtained when the deposited grains come to rest, one at a time, without damaging the substrate. A transition to a disordered packing is observed when the flux is increased. Using micro x-ray computed tomography, we find that defects nucleate at the boundaries of the container in which the packing is grown as grains cooperatively come to rest above their local potential minimum. This leads to a transition from ordered to disordered loose packings that grow in the form of an inverted cone, with the apex located at the defect nucleation site. We capture the observed decrease in order using a minimal model in which a defect leads to growth of further defects in the neighboring sites in the layer above with a probability that increases with the deposition flux.

  18. Magnetic phase transitions in epitaxial Fe/Cr superlattices

    SciTech Connect

    Fullerton, E.E.

    1995-07-01

    Fe/Cr superlattices exhibit a variety of intriguing magnetic properties not observed in bulk materials. Examples include oscillatory interlayer coupling and giant magnetoresistance. Growth of epitaxial superlattices allows the interlayer coupling and magnetic anisotropy to be tailored to probe rather subtle magnetic ordering transitions of thin-film antiferromagnets. The author discusses two such transitions, the surface spin-flop transition in Fe/Cr(211) superlattices and the Neel transition of thin Cr layers in proximity with Fe in Fe/Cr(001) superlattices. The surface spin-flop transition is a first-order, field-induced phase transition in antiferromagnets with uniaxial magnetic anisotropy and the field applied along the easy direction. In Fe/Cr(100) superlattices, the antiferromagnetic ordering of the Cr spacers results in anomalies in a variety of physical properties. The transition temperature is strongly Cr thickness dependent. A `transition-temperature shift exponent` is extracted from the data in the thick Cr regime (< 160 {angstrom}) and discussed in terms of a combination of finite-size and spin-frustration effects.

  19. Equilibrium shape and dislocation nucleation in strained epitaxial nanoislands

    NASA Astrophysics Data System (ADS)

    Jalkanen, J.; Trushin, O.; Elder, K.; Granato, E.; Ala-Nissilä, T.; Ying, S.-C.

    2006-03-01

    We study numerically the equilibrium shapes, shape transitions and dislocation nucleation of small strained epitaxial islands with a two-dimensional atomistic model, using simple pair potentials [1]. We first map out the phase diagram for equilibrium island shapes as a function of island size and lattice misfit with the substrate. When the interactomic potential minimum depth ɛ is the same for substrate and adsorbate, the latter either wets the surface or has one of three generic equilibrium island shapes. As ɛ favours substrate-adsorbate interface, Stranski-Krastanow growth mode emerges between complete wetting and island formation zones while in the opposite case the islanding zone is extended. A simulation based extrapolation scheme predicts an optimal island shape for attractive ɛ. The energy barriers and transition paths between different island shapes and dislocation nucleation in initially coherent islands are investigated with Nudged Elastic Band method. We also discuss the elastic behaviour of these systems in terms of the Phase Field Crystal model [2]. [1] J. Jalkanen, O. Trushin, E. Granato, S. C. Ying, and T. Ala-Nissila, Phys. Rev. B 72, 081403 (2005) [2] K. Elder and M. Grant, Phys. Rev. E 70, 051605 (2004)

  20. Creating Ruddlesden-Popper phases by hybrid molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Haislmaier, Ryan C.; Stone, Greg; Alem, Nasim; Engel-Herbert, Roman

    2016-07-01

    The synthesis of a 50 unit cell thick n = 4 Srn+1TinO3n+1 (Sr5Ti4O13) Ruddlesden-Popper (RP) phase film is demonstrated by sequentially depositing SrO and TiO2 layers in an alternating fashion using hybrid molecular beam epitaxy (MBE), where Ti was supplied using titanium tetraisopropoxide (TTIP). A detailed calibration procedure is outlined for determining the shuttering times to deposit SrO and TiO2 layers with precise monolayer doses using in-situ reflection high energy electron diffraction (RHEED) as feedback. Using optimized Sr and TTIP shuttering times, a fully automated growth of the n = 4 RP phase was carried out over a period of >4.5 h. Very stable RHEED intensity oscillations were observed over the entire growth period. The structural characterization by X-ray diffraction and high resolution transmission electron microscopy revealed that a constant periodicity of four SrTiO3 perovskite unit cell blocks separating the double SrO rocksalt layer was maintained throughout the entire film thickness with a very little amount of planar faults oriented perpendicular to the growth front direction. These results illustrate that hybrid MBE is capable of layer-by-layer growth with atomic level precision and excellent flux stability.