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Sample records for epitaxial orthorhombic ymno3

  1. Strain tuned magnetoelectric coupling in orthorhombic YMnO3 thin films

    NASA Astrophysics Data System (ADS)

    Marti, X.; Fina, I.; Skumryev, V.; Ferrater, C.; Varela, M.; Fábrega, L.; Sánchez, F.; Fontcuberta, J.

    2009-10-01

    Orthorhombic YMnO3 epitaxial thin films were grown on Nb(0.5%)-doped SrTiO3(001) substrates. Film's thickness was varied to tune the epitaxial strain. Structural and magnetic properties are well correlated, presenting a more pronounced ferromagnetic behavior as the unit cell becomes more distorted. Dielectric properties were investigated as a function of the temperature and magnetic field. The dielectric peak occurring at temperatures below the antiferromagnetic ordering is proved to be magnetoelectric and its amplitude is dependent on the unit cell distortion. These findings allow tailoring ferromagnetic and magnetoelectric properties via epitaxial strain.

  2. Orbital Reconstruction Enhanced Exchange Bias in La0.6Sr0.4MnO3/Orthorhombic YMnO3 Heterostructures

    PubMed Central

    Zheng, Dongxing; Jin, Chao; Li, Peng; Wang, Liyan; Feng, Liefeng; Mi, Wenbo; Bai, Haili

    2016-01-01

    The exchange bias in ferromagnetic/multiferroic heterostructures is usually considered to originate from interfacial coupling. In this work, an orbital reconstruction enhanced exchange bias was discovered. As La0.6Sr0.4MnO3 (LSMO) grown on YMnO3 (YMO) suffers a tensile strain (a > c), the doubly degenerate eg orbital splits into high energy 3z2 − r2 and low energy x2 − y2 orbitals, which makes electrons occupy the localized x2 − y2 orbital and leads to the formation of antiferromagnetic phase in LSMO. The orbital reconstruction induced antiferromagnetic phase enhances the exchange bias in the LSMO/YMO heterostructures, lightening an effective way for electric-field modulated magnetic moments in multiferroic magnetoelectric devices. PMID:27090614

  3. Columnar epitaxy of hexagonal and orthorhombic silicides on Si(111)

    NASA Technical Reports Server (NTRS)

    Fathauer, R. W.; Nieh, C. W.; Xiao, Q. F.; Hashimoto, Shin

    1990-01-01

    Columnar grains of PtSi and CrSi2 surrounded by high-quality epitaxial silicon are obtained by ultrahigh vacuum codeposition of Si and metal in an approximately 10:1 ratio on Si(111) substrates heated to 610-840 C. This result is similar to that found previously for CoSi2 (a nearly-lattice-matched cubic-fluorite crystal) on Si(111), in spite of the respective orthorhombic and hexagonal structures of PtSi and CrSi2. The PtSi grains are epitaxial and have one of three variants of the relation defined by PtSi(010)/Si(111), with PtSi 001 line/Si 110 line type.

  4. Ferromagnetic interactions in chromium (III) doped YMnO3

    NASA Astrophysics Data System (ADS)

    Thakur, Rajesh K.; Thakur, Rasna; Kaurav, N.; Okram, G. S.; Gaur, N. K.

    2016-05-01

    Both of the reported compounds with compositions YMn1-xCrxO3 (x = 0.1 and 0.2) are synthesized by using the conventional solid state reaction method and their magnetic properties are analyzed vigilantly. The XRD pattern reveals the hexagonal structure of the reported compounds with space group P63cm (25-1079). The in-depth analysis of the magnetic measurements reveals the enhancement in the ferromagnetic character with Cr doping in YMnO3 compounds. The observed enhancement in the ferromagnetism is found to be due to the increased double exchange interactions among the Cr3+ and Mn3+ ions with Cr doping.

  5. Growth of epitaxial orthorhombic YO1.5-substituted HfO2 thin film

    NASA Astrophysics Data System (ADS)

    Shimizu, Takao; Katayama, Kiliha; Kiguchi, Takanori; Akama, Akihiro; Konno, Toyohiko J.; Funakubo, Hiroshi

    2015-07-01

    YO1.5-substituted HfO2 thin films with various substitution amounts were grown on (100) YSZ substrates by the pulsed laser deposition method directly from the vapor phase. The epitaxial growth of film with different YO1.5 amounts was confirmed by the X-ray diffraction method. Wide-area reciprocal lattice mapping measurements were performed to clarify the crystal symmetry of films. The formed phases changed from low-symmetry monoclinic baddeleyite to high-symmetry tetragonal/cubic fluorite phases through an orthorhombic phase as the YO1.5 amount increased from 0 to 0.15. The additional annular bright-field scanning transmission electron microscopy indicates that the orthorhombic phase has polar structure. This means that the direct growth by vapor is of polar orthorhombic HfO2-based film. Moreover, high-temperature X-ray diffraction measurements showed that the film with a YO1.5 amount of 0.07 with orthorhombic structure at room temperature only exhibited a structural phase transition to tetragonal phase above 450 °C. This temperature is much higher than the reported maximum temperature of 200 °C to obtain ferroelectricity as well as the expected temperature for real device application. The growth of epitaxial orthorhombic HfO2-based film helps clarify the nature of ferroelectricity in HfO2-based films (186 words/200 words).

  6. Unusual ferromagnetic YMnO3 phase in YMnO3/La2 / 3Sr1 / 3MnO3 heterostructures

    NASA Astrophysics Data System (ADS)

    Autieri, Carmine; Sanyal, Biplab

    2014-11-01

    By means of first-principles density functional calculations, we study the structural, magnetic and electronic properties of YMnO3/L{{a}2/3}S{{r}1/3}MnO3 heterostructures. Although in the bulk the ground state of YMnO3 is an antiferromagnet, the YMnO3/L{{a}2/3}S{{r}1/3}MnO3 heterostructure stabilizes the ferromagnetic (FM) phase in YMnO3 in the interface region over a wide range of Coulomb repulsion parameters. The hypothetical FM phase of bulk YMnO3 is dielectric and due to substantial differences between the lattice constants in the ab plane, a strong magnetocrystalline anisotropy is present. This anisotropy produces a high coercivity of the unusual FM YMnO3 that can explain the large vertical shift in the hysteresis loops observed in recent experiments (Paul et al 2014 J. Appl. Crystallogr. 47 1054). The correlation between weak exchange bias and the vertical shift is proposed, which calls for reinvestigation of various systems showing vertical shifts.

  7. Orientation control and domain structure analysis of {100}-oriented epitaxial ferroelectric orthorhombic HfO2-based thin films

    NASA Astrophysics Data System (ADS)

    Katayama, Kiliha; Shimizu, Takao; Sakata, Osami; Shiraishi, Takahisa; Nakamura, Shogo; Kiguchi, Takanori; Akama, Akihiro; Konno, Toyohiko J.; Uchida, Hiroshi; Funakubo, Hiroshi

    2016-04-01

    Orientation control of {100}-oriented epitaxial orthorhombic 0.07YO1.5-0.93HfO2 films grown by pulsed laser deposition was investigated. To achieve in-plane lattice matching, indium tin oxide (ITO) and yttria-stabilized zirconia (YSZ) were selected as underlying layers. We obtained (100)- and (001)/(010)-oriented films on ITO and YSZ, respectively. Ferroelastic domain formation was confirmed for both films by X-ray diffraction using the superlattice diffraction that appeared only for the orthorhombic symmetry. The formation of ferroelastic domains is believed to be induced by the tetragonal-orthorhombic phase transition upon cooling the films after deposition. The present results demonstrate that the orientation of HfO2-based ferroelectric films can be controlled in the same manner as that of ferroelectric films composed of conventional perovskite-type material such as Pb(Zr, Ti)O3 and BiFeO3.

  8. Nonlinear Optical Spectroscopy of the Two-Order-Parameter Compound YMnO3

    NASA Astrophysics Data System (ADS)

    Fröhlich, D.; Leute, St.; Pavlov, V. V.; Pisarev, R. V.

    1998-10-01

    We have observed two types of optical second harmonic spectra of Mn3+ ions in hexagonal YMnO3, one of which is caused by the noncentrosymmetric ferroelectric ordering of charges, whereas the other is due to the centrosymmetric antiferromagnetic ordering of spins. Partial overlapping between the electronic transitions gives rise to a new kind of nonlinear optical polarization P\\(2ω\\) = PFE\\(2ω\\)+PAFM\\(2ω\\), which depends on two order parameters. The magnitude and phase of P\\(2ω\\) can be changed by varying the ratio between the two contributions, as demonstrated by changing the contrast between 180° antiferromagnetic domains, which are indistinguishable in linear optics.

  9. Analysis of the multiferroicity in the hexagonal manganite YMnO3.

    PubMed

    Singh, Kiran; Lepetit, Marie-Bernadette; Simon, Charles; Bellido, Natalia; Pailhès, Stéphane; Varignon, Julien; De Muer, Albin

    2013-10-16

    We performed magnetic and ferroelectric measurements, associated with Landau theory and symmetry analysis, in order to clarify the situation of the YMnO3 system, a classical example of type I multiferroics. We found that the only magnetic group compatible with all experimental data (neutron scattering, magnetization, polarization, dielectric constant, second harmonic generation) is the P6'(3) group. In this group a small ferromagnetic component along c is induced by the Dzyaloshinskii-Moriya interaction, and observed here in magnetization measurements. We found that the ferromagnetic and antiferromagnetic components can only be switched simultaneously, while the magnetic orders are functions of the polarization square and therefore insensitive to its sign.

  10. Bipolar resistive switching in YMnO3/Nb:SrTiO3 pn-heterojunctions

    NASA Astrophysics Data System (ADS)

    Bogusz, Agnieszka; Bürger, Danilo; Skorupa, Ilona; Schmidt, Oliver G.; Schmidt, Heidemarie

    2016-11-01

    Resistively switching oxides are promising materials for use in electronic applications such as nonvolatile memories, logic gates, and artificial synapses. This work presents the bipolar resistive switching (BRS) in YMnO3/Nb:SrTiO3 pn-heterojunctions. A thermally driven electroforming process is required prior to the observed BRS. Results indicate that the BRS in YMnO3/Nb:SrTiO3 originates from the combined effects of charge trapping and detrapping processes along with the electro-migration of charged point defects in the depletion layer of the pn-heterojunction. It is shown that the built-in voltage of the pn-heterojunctions can be tuned by the oxygen partial pressure during growth of the YMnO3 thin film and impacts the working parameters of the resistively switching cell. This study provides a guideline for material engineering of bipolar resistive switches based on pn-heterojunctions.

  11. Optical absorption spectrum and electronic structure of multiferroic hexagonal YMnO3 compound

    NASA Astrophysics Data System (ADS)

    Lima, A. F.; Lalic, M. V.

    2017-02-01

    Optical absorption (OA) spectrum and electronic structure of the hexagonal YMnO3 compound have been investigated by employment of the first-principles calculations based on density functional theory. The calculations were performed upon the ferroelectric structure of the YMnO3, by testing various approximations of the exchange-correlation effects between the Mn d-electrons and considering two types of magnetic ordering of the Mn sub-lattice: (1) collinear anti-ferromagnetic order of the G-type and (2) non-collinear antiferromagnetic order that correspond to magnetic space group P63. The results demonstrate that satisfactory agreement between the theoretical and the experimental OA spectrum can be achieved only if both non-collinear anti-ferromagnetic order of the Mn spins and strong correlations between the Mn d-electrons are taken into account. The latter is found to be best described by effective Hubbard parameter Ueff = 2.55 eV. The principal features of the OA spectrum are interpreted in terms of calculated electronic structure. It is found that the most important, threshold 1.6 eV OA peak is generated by electron transitions from strongly hybridized occupied Mn d- and its neighboring in-plane O p-states to unoccupied Mn d-states. It is also concluded that the electronic gap (calculated as ∼1.1 eV) should be smaller than the optical one (∼1.6 eV).

  12. The effect of strontium doping on the structural and magnetic transition of YMnO3

    NASA Astrophysics Data System (ADS)

    Thakur, Rajesh K.; Thakur, Rasna; Awasthi, A. M.; Ganesan, V.; Gaur, N. K.

    2012-06-01

    A systematic study on the effect of strontium (Sr) doping in YMnO3 has been undertaken. Polycrystalline samples with composition Y1-xSrxMnO3 (x=0, 0.01) were synthesized by using high temperature solid state reaction method. The structural and thermal properties of the prepared samples have been carried out in the wide range of temperature. Our XRD reveals the single phase formation of the reported compounds in hexagonal structure with space group P63cm (JCPDS: 25-1079). The observed pointed kinks in the specific heat study are symptomatic of the probable coupling in between the electric and magnetic orders. Our specific heat curves show that the AFM transition temperature (TN) shifts to higher value with minute Sr doping to Y-site. Further, low temperature study shows independence of specific heat on magnetic field at 8T and 12T.

  13. Electronic and crystal structure changes induced by in-plane oxygen vacancies in multiferroic YMnO3

    DOE PAGES

    Cheng, Shaobo; Meng, Qingping; Li, Mengli; ...

    2016-02-08

    Here, the widely spread oxygen vacancies (VO) in multiferroic materials can strongly affect their physical properties. However, their exact influence has rarely been identified in hexagonal manganites. Here, with the combined use of transmission electron microscopy (TEM) and first-principles calculations, we have systematically studied the electronic and crystal structure modifications induced by VO located at the same Mn atomic plane (in-plane VO). Our TEM experiments reveal that the easily formed in-plane VO not only influence the electronic structure of YMnO3 but alter the in-plane Wyckoff positions of Mn ions, which may subsequently affect the intraplane and interplane exchange interaction ofmore » Mn ions. The ferroelectricity is also impaired due to the introduction of VO. Further calculations confirm these electronic and structural changes and modifications. Our results indicate that the electronic and crystal structure of YMnO3 can be manipulated by the creation of VO.« less

  14. Oxygen-storage behavior and local structure in Ti-substituted YMnO3

    NASA Astrophysics Data System (ADS)

    Levin, I.; Krayzman, V.; Vanderah, T. A.; Tomczyk, M.; Wu, H.; Tucker, M. G.; Playford, H. Y.; Woicik, J. C.; Dennis, C. L.; Vilarinho, P. M.

    2017-02-01

    Hexagonal manganates RMnO3 (R=Y, Ho, Dy) have been recently shown to exhibit oxygen-storage capacities promising for three-way catalysts, air-separation, and related technologies. Here, we demonstrate that Ti substitution for Mn can be used to chemically tune the oxygen-breathing properties of these materials towards practical applications. Specifically, Y(Mn1-xTix)O3 solid solutions exhibit facile oxygen absorption/desorption via reversible Ti3+↔Ti4+ and Mn3+↔Mn4+ reactions already in ambient air at ≈400 °C and ≈250 °C, respectively. On cooling, the oxidation of both cations is accompanied by oxygen uptake yielding a formula YMn3+1-x-yMn4+yTi4+xO3+δ. The presence of Ti promotes the oxidation of Mn3+ to Mn4+, which is almost negligible for YMnO3 in air, thereby increasing the uptake of oxygen beyond that required for a given Ti4+ concentration. The reversibility of the redox reactions is limited by sluggish kinetics; however, the oxidation process continues, if slowly, even at room temperature. The extra oxygen atoms are accommodated by the large interstices within a triangular lattice formed by the [MnO5] trigonal bipyramids. According to bond distances from Rietveld refinements using the neutron diffraction data, the YMnO3 structure features under-bonded Mn and even more severely under-bonded oxygen atoms that form the trigonal bases of the [MnO5] bipyramids. The tensile bond strain around the 5-fold coordinated Mn site and the strong preference of Ti4+(and Mn4+) for higher coordination numbers likely provide driving forces for the oxidation reaction. Reverse Monte Carlo refinements of the local atomic displacements using neutron total scattering revealed how the excess oxygen atoms are accommodated in the structure by correlated local displacements of the host atoms. Large displacements of the under-bonded host oxygen atoms play a key part in this lattice-relaxation process, facilitating reversible exchange of significant amounts of oxygen with atmosphere.

  15. Magnetic transition in Y-site doped multiferroic YMnO3

    NASA Astrophysics Data System (ADS)

    Thakur, Rajesh K.; Thakur, Rasna; Gaur, N. K.

    2016-05-01

    We have synthesized polycrystalline hexagonal Y1-xSrxMnO3 (x=0.02, 0.1) compounds by using conventional solid state reaction method. The detailed structural investigations are carried out by using XRD studies which reveals the single phase formation of the reported compounds with hexagonal structure and space group P63cm (JCPDS: 25-1079). Further the XRD data of reported compounds were analyzed by RIETVELD (FULLPROFF) method which shows the decrease in the lattice parameter with increasing concentration of divalent strontium to Y-site. The observed pointed kinks in the specific heat study are indicative of the probable coupling in between the electric and magnetic orders in this class of materials. The reported systematic specific heat studies shows that the antiferromagnetic (AFM) transition temperature (TN) shifts to higher value with increasing concentration of Sr2+ ion in the YMnO3 compound which is attributed to the enhanced lattice contribution to the specific heat in the this compound. The present compound shows the independence of specific heat and magnetic transition temperature with applied magnetic field of 8T and 12T.

  16. Effect of gamma radiation on the structural, dielectric and magnetoelectric properties of nanostructured hexagonal YMnO3

    NASA Astrophysics Data System (ADS)

    Raneesh, B.; Saha, A.; Kalarikkal, Nandakumar

    2013-08-01

    Nanocrystalline YMnO3 ceramic powders have been synthesized by using the standard sol-gel method. The samples were irradiated with 60Co γ-radiation at a dose rate of 4.7 kGy/h for different time intervals. The effects of irradiation on surface morphology viz. grain size, porosity and also the existence of a few impurity phases have been studied by scanning electron microscopy, X-ray diffraction and far-infrared reflectivity spectroscopy. Irradiation in air produced changes in the dielectric spectrum in the frequency range between 100 Hz and 2 MHz. Subjection of γ-radiation brings about key change on the properties as a consequence of structural transformations. The attained data shows that the electrical conductivity and dielectric constant is actually so much dependent on radiation dose. A quantitative magnetoelectric coefficient measurement in YMnO3 nanosystem was performed by using the dynamic lock-in amplifier technique. The response of the magneto-electric coefficient shows perfect anisotropy in the irradiated samples.

  17. Conductivity Contrast and Tunneling Charge Transport in the Vortexlike Ferroelectric Domain Patterns of Multiferroic Hexagonal YMnO3

    NASA Astrophysics Data System (ADS)

    Ruff, E.; Krohns, S.; Lilienblum, M.; Meier, D.; Fiebig, M.; Lunkenheimer, P.; Loidl, A.

    2017-01-01

    We deduce the intrinsic conductivity properties of the ferroelectric domain walls around the topologically protected domain vortex cores in multiferroic YMnO3 . This is achieved by performing a careful equivalent-circuit analysis of dielectric spectra measured in single-crystalline samples with different vortex densities. The conductivity contrast between the bulk domains and the less conducting domain boundaries is revealed to reach up to a factor of 500 at room temperature, depending on the sample preparation. Tunneling of localized defect charge carriers is the dominant charge-transport process in the domain walls that are depleted of mobile charge carriers. This work demonstrates that, via equivalent-circuit analysis, dielectric spectroscopy can provide valuable information on the intrinsic charge-transport properties of ferroelectric domain walls, which is of high relevance for the design of new domain-wall-based microelectronic devices.

  18. Structural, magnetic, and dielectric properties of solid solutions between BiMnO3 and YMnO3

    NASA Astrophysics Data System (ADS)

    Belik, Alexei A.

    2017-02-01

    Bi1-xYxMnO3 (0.1≤x≤0.9) solid solutions were prepared by the high-pressure high-temperature method at 6 GPa and 1573 K. They crystallize in the GdFeO3-type perovskite structure with the Pnma symmetry. Crystal structures of Bi0.9Y0.1MnO3 and Bi0.5Y0.5MnO3 are studied by synchrotron X-ray powder diffraction at room temperature. Only one Néel temperature, TN, is found in samples with 0.1≤x≤0.9 in comparison with two Néel temperatures observed in YMnO3 (TN=29 and 39 K). Samples with 0.5≤x≤0.9 have almost constant TN=44 K, while TN starts to increase linearly for other compositions: TN=46 K for x=0.3, TN=58 K for x=0.2, and TN=68 K for x=0.1. Field-induced transitions from canted-antiferromagnetic states to antiferromagnetic states are detected at about 30 kOe for x=0.2 and 70 kOe for x=0.1. Dielectric constant increases below TN in samples with 0.5≤x≤1, while it decreases below TN in samples with 0.1≤x≤0.3. Our data suggest that a magnetic structure changes near x=0.4. By extrapolation, we could estimate lattice parameters (a=5.9221 Å, b=7.5738 Å, and c=5.4157 Å) and TN=79 K for a hypothetical Pnma modification of BiMnO3.

  19. Enhancing the orthorhombicity and antiferromagnetic-insulating state in epitaxial La0.67Ca0.33MnO3/NdGaO3(001) films by inserting a SmFeO3 buffer layer

    NASA Astrophysics Data System (ADS)

    Tan, Xuelian; Gao, Guanyin; Chen, Pingfan; Xu, Haoran; Zhi, Bowen; Jin, Feng; Chen, Feng; Wu, Wenbin

    2014-11-01

    Structural and magnetotransport properties of epitaxial La0.67Ca0.33MnO3(30 nm)/NdGaO3(001) [LCMO/NGO(001)] films are tuned by inserting an insulating SmFeO3 (SFO) buffer layer at various thicknesses (t). All the layers and the NGO substrates have the same Pbnm symmetry with the octahedra tilting about the b-axis, but different orthorhombicity (d). We found that as t increases, the fully strained (≤15 nm) or partially relaxed (30-60 nm) SFO layers can produce different d in the upper LCMO films. Correspondingly, the induced antiferromagnetic-insulating (AFI) state in LCMO is greatly enhanced with TAFI shifted from ˜250 K for t ≤ 15 nm to ˜263 K for t = 30-60 nm. We also show that the strain relaxation for t ≥ 30 nm is remarkably anisotropic, with a stable lattice constant a as that of the NGO substrates but increasing b of both SFO and LCMO layers. This indicates the octahedral coupling across the interfaces, leaving the strain along the a-axis accommodated by the octahedral tilts, while along the b-axis most probably by the octahedral deformations. The AFI state in the LCMO layer could be ascribed to the enhanced orthorhombicity with cooperatively increased Jahn-Teller-like distortions and tilting of the MnO6 octahedra. The results strongly suggest that the interfacial octahedral coupling plays a crucial role in epitaxial growth and in tuning functionalities of the perovskite oxide films.

  20. Concentration and temperature dependent double energy gap characteristic properties of hexagonal YMnO3-xBiFeO3 films

    NASA Astrophysics Data System (ADS)

    Xu, Z.; Deng, Q. L.; Zhang, P.; Zhang, J. Z.; Li, Y. W.; Hu, Z. G.; Chu, J. H.

    2016-11-01

    The study of hexagonal (1-x) YMnO3-xBiFeO3 (0≤slant x≤slant 2.5 % ) (YBMF x) films can realize the modulation of h-YMO films, especially for the significant modulation of crystal orientation and surface. The choice of the solvent and solution, and the co-doping of Fe and Bi are two important facts of realizing the modulation. The results of x-ray diffraction and atomic force microscopy measurements indicated that there are the internal relations of the lattice orientation and the surface morphology for highly c-axis-orientation (HCO) and no preferred orientation (NPO), respectively. X-ray photoelectron spectroscopy confirmed that manganese ions show a valence of  +3 in YMnO3 film. The peak positions of the Mn 2p level move to higher energy with increasing concentration. Furthermore, there is an optimal doping concentration of x=1.5 % for the YBMF x (0≤slant x≤slant 2.5 % ) films by taking the shapes of P-E loops, the values of 2P r and 2E c into consideration. The transmittance spectra at room temperature pointed out that the double energy gaps (˜1.25 eV and 3.3 eV) corresponded to significant absorption edges, the band gap (E g1) and subband gap (E g2), respectively. The different dependency of E g1 at the lower temperature can be explained by the ionized impurity scattering. A critical temperature (˜100 K) of E g2 can be attributed to the relaxation of antiferromagnetic phase transformation. The abnormal shrinkage of E g2 below 100 K can be explained by the pinning effect of composite domain walls and the accumulation of discrete oxygen vacancies at composite domain walls. The present study sheds light on the understanding of the electronic band structure, antiferromagnetic phase transformation and their relation in h-YMO. Moreover, it contributes to the verification and improvement of Katsufuji’s model (Katsufuji et al 2001 Phys. Rev. B 64 104419).

  1. Crystal-Orientation-Modulated Exchange Bias in Orthorhombic-YMnO3/La0.6Sr0.4MnO3 Multiferroic Heterostructures.

    PubMed

    Zheng, Dongxing; Gong, Junlu; Jin, Chao; Li, Peng; Bai, Haili

    2015-07-15

    The magnetic properties of the all-oxide multiferroic heterostructures composed of orthorhombic YMnO3 (YMO) with E-type antiferromagnetic and double-exchange ferromagnetic (FM) La0.6Sr0.4MnO3 (LSMO) were studied. An orientation-modulated exchange bias effect, which is related to the interfacial Mn-O-Mn bond angle, was discovered. Because of the large bond angle in YMO/LSMO(100) heterostructures, a strong exchange coupling at the interface is formed. This strong exchange coupling sustains an FM phase in YMO at the interface region. The FM phase with strong magnetocrystalline anisotropy contributes to the vertical shift and exchange bias effect in (100) orientation heterostructures. When LSMO (110) and (111) were layered with YMO, the Mn-O-Mn bond angle was reduced, leading to a weakened exchange coupling at the interface, and only a relatively small exchange bias at low temperatures was visible.

  2. Dispersion analysis of arbitrarily cut orthorhombic crystals.

    PubMed

    Höfer, Sonja; Ivanovski, Vladimir; Uecker, Reinhard; Kwasniewski, Albert; Popp, Jürgen; Mayerhöfer, Thomas G

    2017-06-05

    We developed a measurement and evaluation scheme to perform dispersion analysis on arbitrarily cut orthorhombic crystals based on the schemes developed for triclinic and uniaxial crystals. As byproduct of dispersion analysis the orientations of the crystal axes are found. In contrast to the spectra of arbitrarily cut uniaxial crystals, where the fit routine has to separate two independent principal spectra, the spectra of arbitrarily cut orthorhombic crystals are a combination of three independent spectra and the evaluation scheme gets more complex. Dispersion analysis is exemplary performed on two different crystals, which show different spectral features and different levels of difficulties to evaluate. Neodymium gallate (NdGaO3) has broad overlapping reflections bands while topaz (Al2SiO4 [F, OH]2) has a quite high total number of infrared active bands.

  3. Stabilization of orthorhombic phase in single-crystal ZnSnN2 films

    NASA Astrophysics Data System (ADS)

    Senabulya, Nancy; Feldberg, Nathaniel; Makin, Robert. A.; Yang, Yongsoo; Shi, Guangsha; Jones, Christina M.; Kioupakis, Emmanouil; Mathis, James; Clarke, Roy; Durbin, Steven M.

    2016-07-01

    We report on the crystal structure of epitaxial ZnSnN2 films synthesized via plasma-assisted vapor deposition on (111) yttria stabilized zirconia (YSZ) and (001) lithium gallate (LiGaO2) substrates. X-ray diffraction measurements performed on ZnSnN2 films deposited on LiGaO2 substrates show evidence of single-crystal, phase-pure orthorhombic structure in the Pn21a symmetry [space group (33)], with lattice parameters in good agreement with theoretically predicted values. This Pn21a symmetry is imposed on the ZnSnN2 films by the LiGaO2 substrate, which also has orthorhombic symmetry. A structural change from the wurtzite phase to the orthorhombic phase in films grown at high substrate temperatures ˜550°C and low values of nitrogen flux ˜10-5 Torr is observed in ZnSnN2 films deposited on YSZ characterized by lattice contraction in the basal plane and a 5.7% expansion of the out-of-plane lattice parameter.

  4. An orthorhombic polymorph of mulinic acid.

    PubMed

    Brito, Iván; Bórquez, Jorge; Loyola, Luis Alberto; López-Rodríguez, Matías; Cárdenas, Alejandro

    2010-01-09

    THE TITLE COMPOUND [SYSTEMATIC NAME: (3S,3aS,10bR)-3-isopropyl-5a,8-dimethyl-2,3,4,5,5a,6,7,10,10a,10b-deca-hydro-endo-epidioxy-cyclo-hepta-[e]indene-3a(1H)-carboxylic acid], C(20)H(30)O(4), is a polymorphic form of a previously reported structure [Loyola et al. (1990 ▶). Tetra-hedron, 46, 5413-5420]. The newly found ortho-rhom-bic polymorph crystallizes in P2(1)2(1)2(1) with two mol-ecules in the asymmetric unit. The mol-ecules are linked into discrete D(2) chains by simple O-H⋯O inter-actions. There are only slight variations in the mol-ecular geometry and supra-molecular organization in the crystal structures of the two polymorphs. The densities are 1.145 (monoclinic, P2(1)) and 1.155 Mg m(-3) (ortho-rhom-bic, P2(1)2(1)2(1)).

  5. Observation of Anomalous Phonons in Orthorhombic Rare-earth Manganites

    SciTech Connect

    P Gao; H Chen; T Tyson; Z Liu; J Bai; L Wang; Y Chio; S Cheong

    2011-12-31

    We observe the appearance of a phonon near the lock-in temperature in orthorhombic REMnO{sub 3} (RE denotes rare earth) (RE: Lu and Ho) and anomalous phonon hardening in orthorhombic LuMnO{sub 3}. The anomalous phonon occurs at the onset of spontaneous polarization. No such changes were found in incommensurate orthorhombic DyMnO{sub 3}. These observations directly reveal different electric polarization mechanisms in the E-type and incommensurate-type orthorhombic REMnO{sub 3}.

  6. Malleability of uranium: Manipulating the charge-density wave in epitaxial films

    NASA Astrophysics Data System (ADS)

    Springell, R.; Ward, R. C. C.; Bouchet, J.; Chivall, J.; Wermeille, D.; Normile, P. S.; Langridge, S.; Zochowski, S. W.; Lander, G. H.

    2014-06-01

    We report x-ray synchrotron experiments on epitaxial films of uranium, deposited on niobium and tungsten seed layers. Despite similar lattice parameters for these refractory metals, the uranium epitaxial arrangements are different and the strains propagated along the orthorhombic a axis of the uranium layers are of opposite sign. At low temperatures these changes in epitaxy result in dramatic modifications to the behavior of the charge-density wave in uranium. The differences are explained with the current theory for the electron-phonon coupling in the uranium lattice. Our results emphasize the intriguing possibilities of producing epitaxial films of elements that have complex structures like the light actinides uranium to plutonium.

  7. Niobia and tantala codoped orthorhombic zirconia ceramics

    SciTech Connect

    Hoeftberger, M.; Gritzner, G.

    1995-04-15

    During recent studies it was found that codoping of zirconia with niobia and tantala yielded very corrosion resistant, orthorhombic zirconia ceramics. The powders for those novel ceramics were made via the sol-gel technique by hydrolysis of the respective metal propoxides; a method which required dry-box techniques during the preparation of the alkoxides. In these studies the authors investigated the fabrication of precursor material from aqueous solutions. The preparation of aqueous solutions of salts of zirconium, niobium and tantalum is hampered by rapid hydrolysis. Premature hydrolysis of the chlorides and oxichlorides of niobium, tantalum and zirconium can be, however, prevented in aqueous solutions of oxalic acid. Thus the authors investigated the coprecipitation of hydroxides as precursors by reacting oxalic acid solutions of the respective cations with aqueous ammonia. In addition they studied the effects of calcination and of hydrothermal conversion of the hydroxides to oxides on the powder characteristics and on the mechanical properties of the niobia and tantala codoped zirconia ceramics.

  8. Formation of (111) orientation-controlled ferroelectric orthorhombic HfO2 thin films from solid phase via annealing

    NASA Astrophysics Data System (ADS)

    Mimura, Takanori; Katayama, Kiliha; Shimizu, Takao; Uchida, Hiroshi; Kiguchi, Takanori; Akama, Akihiro; Konno, Toyohiko J.; Sakata, Osami; Funakubo, Hiroshi

    2016-08-01

    0.07YO1.5-0.93HfO2 (YHO7) films were prepared on various substrates by pulse laser deposition at room temperature and subsequent heat treatment to enable a solid phase reaction. (111)-oriented 10 wt. % Sn-doped In2O3(ITO)//(111) yttria-stabilized zirconia, (111)Pt/TiOx/SiO2/(001)Si substrates, and (111)ITO/(111)Pt/TiOx/SiO2/(001)Si substrates were employed for film growth. In this study, X-ray diffraction measurements including θ-2θ measurements, reciprocal space mappings, and pole figure measurements were used to study the films. The film on (111)ITO//(111)yttria-stabilized zirconia was an (111)-orientated epitaxial film with ferroelectric orthorhombic phase; the film on (111)ITO/(111)Pt/TiOx/SiO2/(001)Si was an (111)-oriented uniaxial textured film with ferroelectric orthorhombic phase; and no preferred orientation was observed for the film on the (111)Pt/TiOx/SiO2/(001)Si substrate, which does not contain ITO. Polarization-hysteresis measurements confirmed that the films on ITO covered substrates had saturated ferroelectric hysteresis loops. A remanent polarization (Pr) of 9.6 and 10.8 μC/cm2 and coercive fields (Ec) of 1.9 and 2.0 MV/cm were obtained for the (111)-oriented epitaxial and uniaxial textured YHO7 films, respectively. These results demonstrate that the (111)-oriented ITO bottom electrodes play a key role in controlling the orientation and ferroelectricity of the phase formation of the solid films deposited at room temperature.

  9. Specific features of nonvalent interactions in orthorhombic perovskites

    NASA Astrophysics Data System (ADS)

    Serezhkin, V. N.; Pushkin, D. V.; Serezhkina, L. B.

    2014-07-01

    It is established that isostructural orthorhombic perovskites ABO3 (sp. gr. Pnma in different systems, no. 62, Z = 4), depending on the specificity of nonvalent interactions (which determine the combinatorial-topological type of the Voronoi-Dirichlet polyhedra (VDPs) of four basis atoms), are divided into ten different stereotypes. It is shown by the example of 259 perovskites belonging to the DyCrO3 stereotype that VDP characteristics can be used to quantitatively estimate the distortion of BO6 octahedra, including that caused by the Jahn-Teller effect. It is found that one of the causes of the distortion of the coordination polyhedra of atoms in the structure of orthorhombic perovskites is heteroatomic metal-metal interactions, for which the interatomic distances are much shorter than the sum of the Slater radii of A and B atoms.

  10. Electronic and magnetic properties of orthorhombic iron selenide

    NASA Astrophysics Data System (ADS)

    Lovesey, S. W.

    2016-02-01

    Iron orbitals in orthorhombic iron selenide (FeSe) can produce chargelike multipoles that are polar (parity-odd). Orbitals in question include Fe (3 d ), Fe (4 p ), and p -type ligands that participate in transport properties and bonding. The polar multipoles may contribute weak, space-group forbidden Bragg spots to diffraction patterns collected with x rays tuned in energy to a Fe atomic resonance (Templeton & Templeton scattering). Ordering of conventional, axial magnetic dipoles does not accompany the tetragonal-orthorhombic structural phase transition in FeSe, unlike other known iron-based superconductors. We initiate a new line of inquiry for this puzzling property of orthorhombic FeSe, using a hidden magnetic order that belongs to the m'm'm' magnetic crystal class. It is epitomized by the absence of ferromagnetism and axial magnetic dipoles and the appearance of magnetic monopoles and magnetoelectric quadrupoles. A similar magnetic order occurs in cuprate superconductors, yttrium barium copper oxide and Hg1201, where it was unveiled with the Kerr effect and in Bragg diffraction patterns revealed by polarized neutrons.

  11. Van vleck paramagnetism in orthorhombic TiO2 (Brookite)

    USGS Publications Warehouse

    Senftle, F.E.; Thorpe, A.N.

    1968-01-01

    The magnetic susceptibility of the orthorhombic form of titanium dioxide has been measured from 5 to 300??K. After deducting the temperature-dependent component, which is probably due to defects or impurities, and the free-ion diamagnetic component, the Van Vleck paramagnetism was estimated to be 33??10-6 emu/mole. Comparison is made between this value and the Van Vleck paramagnetism of strontium titanate and the two tetragonal forms of titanium dioxide: rutile and anatase. ?? 1968 The American Physical Society.

  12. Epitaxial Graphene Quantum Electronics

    DTIC Science & Technology

    2014-05-19

    ferromagnetism with spintronics potential. * We have achieved the highest operational frequency in graphene transistors. Epitaxial graphene; quantum transport...important discovery with implications for spintronics . * We have found that ballistic transport most likely involves non-conventional charge carriers

  13. Electronically-driven orthorhombic distortion in FeSe

    NASA Astrophysics Data System (ADS)

    Watson, Matthew; Davies, Nathaniel; Haghighirad, Amir; Narayanan, Arjun; Kim, Timur; Hoersch, Moritz; Blake, Samuel; Coldea, Amalia

    2015-03-01

    FeSe is structurally the simplest of Fe-based superconductors, and exhibits a tetragonal-to-orthorhombic structural transition at ~ 90 K, but no long-range magnetism at any temperature. We report measurements of the resistivity anisotropy in FeSe above Ts finding a large and divergent response to an applied strain, with a comparable magnitude and temperature-dependence to measurements in Ba(Fe1-xCox)2As2, but opposite sign. We compare this data with literature reports on NMR and our own ARPES data, which taken together indicate that the structural transition is electronically-driven with orbital degrees of freedom playing a central role. This work was supported by EPSRC, UK (EP/I004475/1) and Diamond Light Source.

  14. Novel superhard carbon: C-centered orthorhombic C8.

    PubMed

    Zhao, Zhisheng; Xu, Bo; Zhou, Xiang-Feng; Wang, Li-Min; Wen, Bin; He, Julong; Liu, Zhongyuan; Wang, Hui-Tian; Tian, Yongjun

    2011-11-18

    A novel carbon allotrope of C-centered orthorhombic C(8) (Cco-C(8)) is predicted by using a recently developed particle-swarm optimization method on structural search. Cco-C(8) adopts a sp(3) three-dimensional bonding network that can be viewed as interconnected (2,2) carbon nanotubes through 4- and 6-member rings and is energetically more favorable than earlier proposed carbon polymorphs (e.g., M carbon, bct-C(4), W carbon, and chiral C(6)) over a wide range of pressures studied (0-100 GPa). The simulated x-ray diffraction pattern, density, and bulk modulus of Cco-C(8) are in good accordance with the experimental data on structurally undetermined superhard carbon recovered from cold compression of carbon nanotube bundles. The simulated hardness of Cco-C(8) can reach a remarkably high value of 95.1 GPa, such that it is capable of cracking diamond.

  15. Orthorhombic C32: a novel superhard sp3 carbon allotrope.

    PubMed

    Zhang, Miao; Liu, Hanyu; Du, Yonghui; Zhang, Xinxin; Wang, Yanchao; Li, Quan

    2013-09-07

    Using a recently developed 'Crystal structure AnaLYsis by Particle Swarm Optimization' (CALYPSO) algorithm on a structural search, we predicted a novel sp(3) carbon allotrope possessing an orthorhombic lattice with the space group Cmmm (oC32). The calculated elastic constants and the simulated hardness revealed that oC32 simultaneously possesses ultra-incompressible and superhard properties with a high bulk modulus of 457 GPa and a high Vickers hardness of 96.2 GPa. This oC32 phase is dynamically stable and energetically more preferable than the experientially observed cold-compressed carbon, thus oC32 is expected to be experimentally synthesizable under extreme conditions. These results further expand the list of meta-stable carbon allotropes and superhard materials under atmospheric and extreme conditions.

  16. Critical thickness of high structural quality SrTiO3 films grown on orthorhombic (101) DyScO3

    SciTech Connect

    Hawley, Marilyn E; Biegalski, Michael D; Schlom, Darrell G

    2008-01-01

    Strained epitaxial SrTiO{sub 3} films were grown on orthorhombic (101) DyScO{sub 3} substrates by reactive molecular-beam epitaxy. The epitaxy of this substrate/film combination is cube on cube with a pseudocubic out-of-plane (001) orientation. The strain state and structural perfection of films with thicknesses ranging from 50 to 1000 {angstrom} were examined using x-ray scattering. The critical thickness at which misfit dislocations was introduced was between 350 and 500 {angstrom}. These films have the narrowest rocking curves (full width at half maximum) ever reported for any heteroepitaxial oxide film (0.0018{sup o}). Only a modest amount of relaxation is seen in films exceeding the critical thicknesses even after postdeposition annealing at 700{sup o}C in 1 atm of oxygen. The dependence of strain relaxation on crystallographic direction is attributed to the anisotropy of the substrate. These SrTiO{sub 3} films show structural quality more typical of semiconductors such as GaAs and silicon than perovskite materials; their structural relaxation behavior also shows similarity to that of compound semiconductor films.

  17. Epitaxial Garnets and Hexagonal Ferrites.

    DTIC Science & Technology

    1983-12-01

    Ferrites Lithium Ferrite Magnetostatic Wave Garnets Epitaxy Yttrium Iron Garnet Liquid Phase Epitaxy Hexagonal Ferrite Microwave Signal Processing...epitaxial ferrit ( materials for use in microwave and millirreter-wave signal processing devices. The major emphasis has been on multiple layer...overall objective of this research is to develop epitaxial single crystal ferrite films suitable for microwave and millimeter-wave signal processing at

  18. Directed Growth of Orthorhombic Crystals in a Micropillar Array.

    PubMed

    Holzner, Gregor; Binder, Claudia; Kriel, Frederik H; Priest, Craig

    2017-02-14

    We report directed growth of orthorhombic crystals of potassium permanganate in spatial confinement of a micropillar array. The solution is introduced by spontaneous wicking to give a well-defined film (thickness 10-15 μm; volume ∼600 nL) and is connected to a reservoir (several microliters) that continuously "feeds" the evaporating film. When the film is supersaturated, crystals nucleate and preferentially grow in specific directions guided by one of several possible linear paths through the pillar lattice. Crystals that do not initially conform are stopped at an obstructing pillar, branch into another permitted direction, or spontaneously rotate to align with a path and continue to grow. Microspectroscopy is able to track the concentration of solute in a small region of interest (70 × 100 μm(2)) near to growing crystals, revealing that the solute concentration initially increases linearly beyond the solubility limit. Crystal growth near the region of interest resulted in a sharp decrease in the local solute concentration (which rapidly returns the concentration to the solubility limit), consistent with estimated diffusion time scales (<1 s for a 50 μm length scale). The ability to simultaneously track solute concentration and control crystal orientation in nanoliter samples will provide new insight into microscale dynamics of microscale crystallization.

  19. Theoretical Study of Orthorhombic Distortions in High-Temperature Superconductors

    NASA Astrophysics Data System (ADS)

    Schnyder, Andreas; Manske, Dirk; Mudry, Christopher; Sigrist, Manfred

    2006-03-01

    Using a Fermi-liquid-based theory we calculate the response function for various spectroscopic probes in hole-doped high-TC superconductors, and determine the effects of orthorhombic distortions in the crystal lattice and asymmetry in the superconducting gap function. Employing the two-dimensional one-band Hubbard model and a generalized RPA-type theory we consider anisotropic hopping parameters (txty) and a mixing of d- and s-wave symmetry of the superconducting order parameter. Within this model, both the electronic Raman spectra and the dynamical magnetic susceptibility [1] are studied in detail. The relevance of these calculations to electronic Raman scattering measurements and inelastic neutron scattering experiments [2] on untwinned YBa2Cu3O6+x are discussed. [1] A. P. Schnyder, D. Manske, C. Mudry, and M. Sigrist, cond-mat/0510790. [2] V. Hinkov, S. Pailhes, P. Bourges, Y. Sidis, A. Ivanov, A. Kulakov, C. T. Lin, D. P. Chen, C. Bernhard, and B. Keimer, Nature 430, 650 (2004).

  20. Orthorhombic Titanium Matrix Composite Subjected to Simulated Engine Mission Cycles

    NASA Technical Reports Server (NTRS)

    Gabb, Timothy P.

    1997-01-01

    Titanium matrix composites (TMC's) are commonly made up of a titanium alloy matrix reinforced by silicon carbide fibers that are oriented parallel to the loading axis. These composites can provide high strength at lower densities than monolithic titanium alloys and superalloys in selected gas turbine engine applications. The use of TMC rings with unidirectional SiC fibers as reinforcing rings within compressor rotors could significantly reduce the weight of these components. In service, these TMC reinforcing rings would be subjected to complex service mission loading cycles, including fatigue and dwell excursions. Orthorhombic titanium aluminide alloys are of particular interest for such TMC applications because their tensile and creep strengths are high in comparison to those of other titanium alloys. The objective of this investigation was to assess, in simulated mission tests at the NASA Lewis Research Center, the durability of a SiC (SCS-6)/Ti-22Al-23Nb (at.%) TMC for compressor ring applications, in cooperation with the Allison Engine Company.

  1. Covalent dependence of octahedral rotations in orthorhombic perovskite oxides.

    PubMed

    Cammarata, Antonio; Rondinelli, James M

    2014-09-21

    The compositional dependence of metal-oxygen BO6 octahedral distortions, including bond elongations and rotations, is frequently discussed in the ABO3 perovskite literature; structural distortions alleviate internal stresses driven by under- or over-coordinated bond environments. Here we identify the dependence of octahedral rotations from changes in metal-oxygen bond covalency in orthorhombic perovskites. Using density functional theory we formulate a covalency metric, which captures both the real and k-space interactions between the magnitude and sense, i.e., in-phase or out-of-phase, octahedral rotations, to explore the link between the ionic-covalent Fe-O bond and the interoctahedral Fe-O-Fe bond angles in Pbnm ferrates. Our survey finds that the covalency of the metal-oxygen bond is correlated with the rotation amplitude: We find the more covalent the Fe-O bond, the less distorted is the structure and the more important the long-range inter-octahedral (Fe-O-Fe bond angle) interactions. Finally, we show how to indirectly tune the B-O bond covalency by A-cation induced BO6 rotations independent of ionic size, facilitating design of targeted bonding interactions in complex perovskites.

  2. Water in hydrated orthorhombic lysozyme crystal: Insight from atomistic simulations.

    PubMed

    Hu, Zhongqiao; Jiang, Jianwen; Sandler, Stanley I

    2008-08-21

    Biologically important water in orthorhombic lysozyme crystal is investigated using atomistic simulations. A distinct hydration shell surrounding lysozyme molecules is found from the number distribution of water molecules. While the number of water molecules in the hydration shell increases, the percentage decreases as the hydration level rises. Adsorption of water in the lysozyme crystal shows type-IV behavior. At low hydration levels, water molecules primarily intercalate the minor pores and cavity in the crystal due to the strong affinity between protein and water. At high hydration levels, the major pores are filled with liquidlike water as capillary condensation occurs. A type-H4 hysteresis loop is observed in the adsorption and desorption isotherms. The locations of the water molecules identified from simulation match fairly well with the experimentally determined crystallographic hydration sites. As observed in experiment, water exhibits anomalous subdiffusion because of the geometric restrictions and interactions of protein. With increasing hydration level, this anomaly is reduced and the diffusion of water tends to progressively approach normal Brownian diffusion. The flexibility of protein framework slightly enhances water mobility, but this enhancement decreases with increasing hydration level.

  3. Water in hydrated orthorhombic lysozyme crystal: Insight from atomistic simulations

    NASA Astrophysics Data System (ADS)

    Hu, Zhongqiao; Jiang, Jianwen; Sandler, Stanley I.

    2008-08-01

    Biologically important water in orthorhombic lysozyme crystal is investigated using atomistic simulations. A distinct hydration shell surrounding lysozyme molecules is found from the number distribution of water molecules. While the number of water molecules in the hydration shell increases, the percentage decreases as the hydration level rises. Adsorption of water in the lysozyme crystal shows type-IV behavior. At low hydration levels, water molecules primarily intercalate the minor pores and cavity in the crystal due to the strong affinity between protein and water. At high hydration levels, the major pores are filled with liquidlike water as capillary condensation occurs. A type-H4 hysteresis loop is observed in the adsorption and desorption isotherms. The locations of the water molecules identified from simulation match fairly well with the experimentally determined crystallographic hydration sites. As observed in experiment, water exhibits anomalous subdiffusion because of the geometric restrictions and interactions of protein. With increasing hydration level, this anomaly is reduced and the diffusion of water tends to progressively approach normal Brownian diffusion. The flexibility of protein framework slightly enhances water mobility, but this enhancement decreases with increasing hydration level.

  4. Thermal Decomposition Characteristics of Orthorhombic Ammonium Perchlorate (o-AP)

    SciTech Connect

    Behrens, R.; Minier, L.

    1999-03-01

    Preliminary STMBMS and SEM results of the thermal decomposition of AP in the orthorhombic phase are presented. The overall decomposition is shown to be complex and controlled by both physical and chemical processes. The data show that the physical and chemical processes can be probed and characterized utilizing SEM and STMBMS. The overall decomposition is characterized by three distinguishing features: an induction period, and accelerator period and a deceleratory period. The major decomposition event occurs in the subsurface of the AP particles and propagates towards the center of the particle with time. The amount of total decomposition is dependent upon particle size and increases from 23% for {approximately}50{micro}m-diameter AP to 33% for {approximately}200{micro}m-diameter AP. A conceptual model of the physical processes is presented. Insight into the chemical processes is provided by the gas formation rates that are measured for the gaseous products. To our knowledge, this is the first presentation of data showing that the chemical and physical decomposition processes can be identified from one another, probed and characterized at the level that is required to better understand the thermal decomposition behavior of AP. Future work is planned with the goal of obtaining data that can be used to develop a mathematical description for the thermal decomposition of o-AP.

  5. Epitaxial thin films

    DOEpatents

    Hunt, Andrew Tye; Deshpande, Girish; Lin, Wen-Yi; Jan, Tzyy-Jiuan

    2006-04-25

    Epitatial thin films for use as buffer layers for high temperature superconductors, electrolytes in solid oxide fuel cells (SOFC), gas separation membranes or dielectric material in electronic devices, are disclosed. By using CCVD, CACVD or any other suitable deposition process, epitaxial films having pore-free, ideal grain boundaries, and dense structure can be formed. Several different types of materials are disclosed for use as buffer layers in high temperature superconductors. In addition, the use of epitaxial thin films for electrolytes and electrode formation in SOFCs results in densification for pore-free and ideal gain boundary/interface microstructure. Gas separation membranes for the production of oxygen and hydrogen are also disclosed. These semipermeable membranes are formed by high-quality, dense, gas-tight, pinhole free sub-micro scale layers of mixed-conducting oxides on porous ceramic substrates. Epitaxial thin films as dielectric material in capacitors are also taught herein. Capacitors are utilized according to their capacitance values which are dependent on their physical structure and dielectric permittivity. The epitaxial thin films of the current invention form low-loss dielectric layers with extremely high permittivity. This high permittivity allows for the formation of capacitors that can have their capacitance adjusted by applying a DC bias between their electrodes.

  6. Germanium epitaxy on silicon

    PubMed Central

    Ye, Hui; Yu, Jinzhong

    2014-01-01

    With the rapid development of on-chip optical interconnects and optical computing in the past decade, silicon-based integrated devices for monolithic and hybrid optoelectronic integration have attracted wide attention. Due to its narrow pseudo-direct gap behavior and compatibility with Si technology, epitaxial Ge-on-Si has become a significant material for optoelectronic device applications. In this paper, we describe recent research progress on heteroepitaxy of Ge flat films and self-assembled Ge quantum dots on Si. For film growth, methods of strain modification and lattice mismatch relief are summarized, while for dot growth, key process parameters and their effects on the dot density, dot morphology and dot position are reviewed. The results indicate that epitaxial Ge-on-Si materials will play a bigger role in silicon photonics. PMID:27877657

  7. Germanium epitaxy on silicon.

    PubMed

    Ye, Hui; Yu, Jinzhong

    2014-04-01

    With the rapid development of on-chip optical interconnects and optical computing in the past decade, silicon-based integrated devices for monolithic and hybrid optoelectronic integration have attracted wide attention. Due to its narrow pseudo-direct gap behavior and compatibility with Si technology, epitaxial Ge-on-Si has become a significant material for optoelectronic device applications. In this paper, we describe recent research progress on heteroepitaxy of Ge flat films and self-assembled Ge quantum dots on Si. For film growth, methods of strain modification and lattice mismatch relief are summarized, while for dot growth, key process parameters and their effects on the dot density, dot morphology and dot position are reviewed. The results indicate that epitaxial Ge-on-Si materials will play a bigger role in silicon photonics.

  8. Germanium epitaxy on silicon

    NASA Astrophysics Data System (ADS)

    Ye, Hui; Yu, Jinzhong

    2014-04-01

    With the rapid development of on-chip optical interconnects and optical computing in the past decade, silicon-based integrated devices for monolithic and hybrid optoelectronic integration have attracted wide attention. Due to its narrow pseudo-direct gap behavior and compatibility with Si technology, epitaxial Ge-on-Si has become a significant material for optoelectronic device applications. In this paper, we describe recent research progress on heteroepitaxy of Ge flat films and self-assembled Ge quantum dots on Si. For film growth, methods of strain modification and lattice mismatch relief are summarized, while for dot growth, key process parameters and their effects on the dot density, dot morphology and dot position are reviewed. The results indicate that epitaxial Ge-on-Si materials will play a bigger role in silicon photonics.

  9. Vacancies in epitaxial graphene

    SciTech Connect

    Davydov, S. Yu.

    2015-08-15

    The coherent-potential method is used to consider the problem of the influence of a finite concentration of randomly arranged vacancies on the density of states of epitaxial graphene. To describe the density of states of the substrate, simple models (the Anderson model, Haldane-Anderson model, and parabolic model) are used. The electronic spectrum of free single-sheet graphene is considered in the low-energy approximation. Charge transfer in the graphene-substrate system is discussed. It is shown that, in all cases, the density of states of epitaxial graphene decreases proportionally to the vacancy concentration. At the same time, the average charge transferred from graphene to the substrate increases.

  10. Epitaxial thinning process

    NASA Technical Reports Server (NTRS)

    Siegel, C. M. (Inventor)

    1984-01-01

    A method is described for thinning an epitaxial layer of a wafer that is to be used in producing diodes having a specified breakdown voltage and which also facilitates the thinning process. Current is passed through the epitaxial layer, by connecting a current source between the substrate of the wafer and an electrolyte in which the wafer is immersed. When the wafer is initially immersed, the voltage across the wafer initially drops and then rises at a steep rate. When light is applied to the wafer the voltage drops, and when the light is interrupted the voltage rises again. These changes in voltage, each indicate the breakdown voltage of a Schottky diode that could be prepared from the wafer at that time. The epitaxial layer is thinned by continuing to apply current through the wafer while it is immersed and light is applied, to form an oxide film and when the oxide film is thick the wafer can then be cleaned of oxide and the testing and thinning continued. Uninterrupted thinning can be achieved by first forming an oxide film, and then using an electrolyte that dissolves the oxide about as fast as it is being formed, to limit the thickness of the oxide layer.

  11. Structural and magnetic properties of epitaxially grown MnAs films on GaAs(110)

    NASA Astrophysics Data System (ADS)

    Kolovos-Vellianitis, D.; Herrmann, C.; Däweritz, L.; Ploog, K. H.

    2005-08-01

    MnAs films were grown by molecular beam epitaxy (MBE) on GaAs(110) substrates, since this orientation was recently identified as promising for the increase of spin lifetimes in semiconductor heterojunctions, which is of interest in spin injection experiments. A single epitaxial orientation was revealed for the MnAs films which consist of both the ferromagnetic, hexagonal α-MnAs and the paramagnetic, orthorhombic β-MnAs phase at room temperature. This phase coexistence could be imaged as a well ordered stripe pattern, whose periodicity depends on the film thickness. The study of the ferromagnetic properties shows a strong influence of the film thickness on the measured coercive fields and saturation magnetizations.

  12. Structural and magnetic properties of epitaxially grown MnAs films on GaAs(110)

    SciTech Connect

    Kolovos-Vellianitis, D.; Herrmann, C.; Daeweritz, L.; Ploog, K.H.

    2005-08-29

    MnAs films were grown by molecular beam epitaxy (MBE) on GaAs(110) substrates, since this orientation was recently identified as promising for the increase of spin lifetimes in semiconductor heterojunctions, which is of interest in spin injection experiments. A single epitaxial orientation was revealed for the MnAs films which consist of both the ferromagnetic, hexagonal {alpha}-MnAs and the paramagnetic, orthorhombic {beta}-MnAs phase at room temperature. This phase coexistence could be imaged as a well ordered stripe pattern, whose periodicity depends on the film thickness. The study of the ferromagnetic properties shows a strong influence of the film thickness on the measured coercive fields and saturation magnetizations.

  13. Misfit dislocations in epitaxy

    NASA Astrophysics Data System (ADS)

    van der Merwe, Jan H.

    2002-08-01

    This article on epitaxy highlights the following: the definition and some historical milestones; the introduction by Frenkel and Kontorowa (FK) of a truncated Fourier series to model the periodic interaction at crystalline interfaces; the invention by Frank and van der Merwe (FvdM)—using the FK model—of (interfacial) misfit dislocations as an important mechanism in accommodating misfit at epilayer-substrate interfaces; the generalization of the FvdM theory to multilayers; the application of the parabolic model by Jesser and van der Merwe to describe, for growing multilayers and superlattices, the impact of Fourier coefficients in the realization of epitaxial orientations and the stability of modes of misfit accommodation; the involvement of intralayer interaction in the latter—all features that impact on the attainment of perfection in crystallinity of thin films, a property that is so vital in the fabrication of useful uniformly thick epilayers (uniformity being another technological requirement), which also depends on misfit accommodation through the interfacial energy that function strongly in the criterion for growth modes, proposed by Bauer; and the ingenious application of the Volterra model by Matthews and others to describe misfit accommodation by dislocations in growing epilayers.

  14. Dipole-field sums and Lorentz factors for orthorhombic lattices, and implications for polarizable molecules

    NASA Technical Reports Server (NTRS)

    Purvis, C. K.; Taylor, P. L.

    1982-01-01

    A method for computing the Lorentz tensor components in single crystals via rapidly convergent sums of Bessels functions is developed using the relationship between dipole-field sums and the tensor components. The Lorentz factors for simple, body-centered, and base-centered orthorhombic lattices are computed using this method, and the derivative Lorentz factors for simple orthorhombic lattices are also determined. Both the Lorentz factors and their derivatives are shown to be very sensitive to a lattice structure. The equivalent of the Clausius-Mossotti relation for general orthorhombic lattices is derived using the Lorentz-factor formalism, and the permanent molecular dipole moment is related to crystal polarization for the case of a ferroelectric of polarizable point dipoles. It is concluded that the polarization enhancement due to self-polarization familiar from classical theory may actually be a reduction in consequences of negative Lorentz factors in one or two lattice directions for noncubic crystals.

  15. Crystallization of the Focal Adhesion Kinase Targeting (FAT) Domain in a Primitive Orthorhombic Space Group

    SciTech Connect

    Magis,A.; Bailey, K.; Kurenova, E.; Hernandez Prada, J.; Cance, W.; Ostrov, D.

    2008-01-01

    X-ray diffraction data from the targeting (FAT) domain of focal adhesion kinase (FAK) were collected from a single crystal that diffracted to 1.99 Angstroms resolution and reduced to the primitive orthorhombic lattice. A single molecule was predicted to be present in the asymmetric unit based on the Matthews coefficient. The data were phased using molecular-replacement methods using an existing model of the FAK FAT domain. All structures of human focal adhesion kinase FAT domains solved to date have been solved in a C-centered orthorhombic space group.

  16. Structural and transport properties of orthorhombic GdMnO3

    NASA Astrophysics Data System (ADS)

    Modi, Anchit; Thakur, Rajesh K.; Thakur, Rasna; Gaur, N. K.; Kaurav, N.; Okram, G. S.

    2013-06-01

    We report structural and transport properties of the polycrystalline orthorhombic GdMnO3 compound synthesized by using conventional solid state reaction method. The XRD pattern reveals the single phase formation of the reported compound in orthorhombic crystal structure with space group Pbnm (JCPDS: 25-0337). The temperature dependent resistivity study indicates the highly resistive nature of the compound especially in the low temperature region. The effect of low temperature magnetic ordering can be clearly understood from the resistivity versus temperature plot. The calculated activation energy by using Arrhenius equation fitting are found slightly lesser than the reported value which indicates the lesser dense nature of the prepared compound.

  17. Epitaxial Silicon Doped With Antimony

    NASA Technical Reports Server (NTRS)

    Huffman, James E.; Halleck, Bradley L.

    1996-01-01

    High-purity epitaxial silicon doped with antimony made by chemical vapor deposition, using antimony pentachloride (SbCI5) as source of dopant and SiH4, SiCI2H2, or another conventional source of silicon. High purity achieved in layers of arbitrary thickness. Epitaxial silicon doped with antimony needed to fabricate impurity-band-conduction photodetectors operating at wavelengths from 2.5 to 40 micrometers.

  18. High-efficient thermoelectric materials: The case of orthorhombic IV-VI compounds

    PubMed Central

    Ding, Guangqian; Gao, Guoying; Yao, Kailun

    2015-01-01

    Improving the thermoelectric efficiency is one of the greatest challenges in materials science. The recent discovery of excellent thermoelectric performance in simple orthorhombic SnSe crystal offers new promise in this prospect [Zhao et al. Nature 508, 373 (2014)]. By calculating the thermoelectric properties of orthorhombic IV-VI compounds GeS,GeSe,SnS, and SnSe based on the first-principles combined with the Boltzmann transport theory, we show that the Seebeck coefficient, electrical conductivity, and thermal conductivity of orthorhombic SnSe are in agreement with the recent experiment. Importantly, GeS, GeSe, and SnS exhibit comparative thermoelectric performance compared to SnSe. Especially, the Seebeck coefficients of GeS, GeSe, and SnS are even larger than that of SnSe under the studied carrier concentration and temperature region. We also use the Cahill's model to estimate the lattice thermal conductivities at the room temperature. The large Seebeck coefficients, high power factors, and low thermal conductivities make these four orthorhombic IV-VI compounds promising candidates for high-efficient thermoelectric materials. PMID:26045338

  19. Orthorhombic faults system at the onset of the Late Mesozoic-Cenozoic Barents Sea rifting

    NASA Astrophysics Data System (ADS)

    Collanega, Luca; Breda, Anna; Massironi, Matteo

    2016-04-01

    The structures of the Late Mesozoic/Cenozoic Barents Sea rifting have been investigated with multichannel 3D seismics, covering an area of 7700 sqKm in the Hoop Fault Complex, a transitional area between the platform and the marginal basins. The main structural lineaments have been mapped in a time domain 3D surface and their activity ranges have been constrained through the sin-sedimentary thickness variations detected in time-thickness maps. Two main fault systems have been identified: an orthorhombic fault system consisting of two fault sets trending almost perpendicularly one to the other (WNW-ESE and NNE-SSW) and a graben/half-graben system, elongated approximately N-S in the central part of the study area. While the graben/half-graben system can be explained through the theory of Anderson, this landmark theory fails to explain the simultaneous activity of the two fault sets of the orthorhombic system. So far, the models that can better explain orthorhombic fault arrangements are the slip model by Reches (Reches, 1978; Reches, 1983; Reches and Dieterich, 1983) and the odd-axis model by Krantz (Krantz, 1988). However, these models are not definitive and a strong quest to better understand polymodal faulting is actual (Healy et al., 2015). In the study area, the presence of both a classical Andersonian and an orthorhombic system indicates that these models are not alternative but are both effective and necessary to explain faulting in different circumstances. Indeed, the Andersonian plain strain and the orthorhombic deformation have affected different part of the succession during different phases of the rifting. In particular, the orthorhombic system has affected only the Late Mesozoic-Cenozoic interval of the succession and it was the main active system during the initial phase of the rifting. On the other hand, the graben/half-graben system has affected the whole sedimentary succession, with an increasing activity during the development of the rifting. It has

  20. Submonolayer epitaxy with impurities

    NASA Astrophysics Data System (ADS)

    Kotrla, Miroslav; Krug, Joachim; Smilauer, Pavel

    2000-03-01

    The effect of impurities on epitaxial growth in the submonolayer regime is studied using kinetic Monte Carlo simulations of a two-species solid-on-solid growth model. Both species are mobile, and attractive interactions among adatoms and between adatoms and impurities are incorporated. Impurities can be codeposited with the growing material or predeposited prior to growth. The activated exchange of impurities and adatoms is identified as the key kinetic process in the formation a growth morphology in which the impurities decorate the island edges. The dependence of the island density N on flux F and coverage θ is studied in detail. The impurities strongly increase the island density without appreciably changing the exponent \\chi in the power law relation N ~ F^\\chi, apart from a saturation of the flux dependence at large F and small θ. Within the present model, even completely decorated island edges do not provide efficient barriers to the attachment of adatoms, and therefore the mechanism for the increase of \\chi proposed by D. Kandel [Phys. Rev. Lett. 78, 499 (1997)] is not operative. A simple analytic theory taking into account only the dependence of the adatom diffusion constant on impurity coverage is shown to provide semi-quantitative agreement with many features observed in the simulations.

  1. Method of epitaxially depositing cadmium sulfide

    NASA Technical Reports Server (NTRS)

    Hawrylo, Frank Z. (Inventor)

    1980-01-01

    A single crystal layer of either cadmium sulfide or an alloy of cadmium sulfide and indium phosphide is epitaxially deposited on a substrate of cadmium sulfide by liquid phase epitaxy using indium as the solvent.

  2. Epitaxial technology for low cost solar cells

    NASA Technical Reports Server (NTRS)

    Kressel, H.; Raccah, P. M.

    1975-01-01

    Epitaxial solar cell structures on low cost silicon substrates are compared to direct diffusion substrates. Dislocation density in the epitaxial layers is found to be significantly lower than that of the substrate material. The saturation current density of diodes epitaxially formed on the substrate is commonly 2 to 3 orders of magnitude lower than for diodes formed by direct diffusion. Solar cells made epitaxially are substantially better than those made by direct diffusion into similar material.

  3. Polarization rotation associated critical phenomena in epitaxial PbTiO3 thin films near room temperature

    NASA Astrophysics Data System (ADS)

    Ma, Wenhui

    2016-04-01

    Strain-driven and temperature-driven monoclinic-orthorhombic phase transition in epitaxial PbTiO3 exhibit similar behavior under electric field, i.e., polarization discontinuity is reduced at the first-order ferroelectric-ferroelectric transition whose latent heat vanishes at a critical point. Due to critical phenomena the energy barrier for polarization rotation significantly diminishes, and hence thermodynamic response functions tend to diverge in the induced monoclinic states. Phenomenological calculations show that dielectric and piezoelectric properties are highly tunable by in-plane strain and electric field, and large electromechanical response may occur in epitaxial PbTiO3 thin films at room temperature. Phenomenological calculations show that large electrocaloric responsivity can also be expected at room temperature by manipulating the phase transition.

  4. Ab initio structural, electronic and optical properties of orthorhombic CaGeO{sub 3}

    SciTech Connect

    Henriques, J.M.; Caetano, E.W.S. Freire, V.N.; Costa, J.A.P. da; Albuquerque, E.L.

    2007-03-15

    Orthorhombic CaGeO{sub 3} is studied using density-functional theory (DFT) considering both the local density and generalized gradient approximations, LDA and GGA, respectively. The electronic band structure, density of states, dielectric function and optical absorption are calculated. Two very close indirect (S->{gamma}) and direct ({gamma}->{gamma}) band gap energies of 1.68eV (2.31eV) and 1.75eV (2.41eV) were obtained within the GGA (LDA) approximation, as well as the effective masses for electrons and holes. Comparing with orthorhombic CaCO{sub 3} (aragonite), the substitution of carbon by germanium changes the localization of the valence band maximum of the indirect transition, and decreases by almost 2.0eV the Kohn-Sham band gap energies.

  5. Superconductivity in MgPtSi: An orthorhombic variant of MgB2

    NASA Astrophysics Data System (ADS)

    Kudo, Kazutaka; Fujimura, Kazunori; Onari, Seiichiro; Ota, Hiromi; Nohara, Minoru

    2015-05-01

    A ternary compound, MgPtSi, was synthesized by solid-state reaction. An examination of the compound by powder x-ray diffraction revealed that it crystallizes in the orthorhombic TiNiSi-type structure with the P n m a space group. The structure comprises alternately stacked layers of Mg and PtSi honeycomb network, which is reminiscent of MgB2, and the buckling of the honeycomb network causes orthorhombic distortion. Electrical and magnetic studies revealed that MgPtSi exhibited superconductivity with a transition temperature of 2.5 K. However, its isostructural compounds, namely, MgRhSi and MgIrSi, were not found to exhibit superconductivity.

  6. The Solubility of Orthorhombic Lysozyme Crystals Obtained at High pH

    SciTech Connect

    Aldabaibeh, Naser; Jones, Matthew J.; Myerson, Allan S.; Ulrich, Joachim

    2009-07-06

    The high pH region of the phase diagram of lysozyme with NaCl as a precipitant was determined. In this region of the phase diagram, lysozyme crystallizes in one of two different orthorhombic modifications, the low and high temperature orthorhombic modifications. The solubility of two modifications was measured at different temperatures, pH values, and NaCl concentrations. Both modifications show a similar dependence on the solution conditions where solubility increases with temperature and decreases with pH and NaCl concentration. The transition temperature between the two modifications was determined from the solubility curves and was shown to increase with pH and NaCl concentration. At pH values close to the isoelectric point (pH 11), the transition temperature becomes independent of NaCl concentration.

  7. Angular dependences of spin-wave resonance spectra of inhomogeneous films with orthorhombic anisotropy

    NASA Astrophysics Data System (ADS)

    Zyuzin, A. M.; Bakulin, M. A.; Radaikin, V. V.; Yantsen, N. V.

    2017-02-01

    Zero spin-wave mode in inhomogeneous magnetic films with orthorhombic anisotropy has been found to exhibit a change of its localization region in two of three typical angular dependences of resonance fields of high-intensity modes. It has been shown that the anisotropy fields on both sides of the film can be determined from the resonance fields of the zero and uppermost high-intensity spin-wave modes of spin-wave resonance spectra.

  8. Lattice dynamics of proton conductor SrZrO{sub 3} in orthorhombic phase

    SciTech Connect

    Sharma, Anupam Deep; Sinha, M. M.

    2014-04-24

    In the this paper, we are presenting the results of our theoretical investigation on the zone centre phonon frequencies and phonon dispersion relation of SrZrO{sub 3} in its orthorhombic phase by using lattice dynamical simulation method based on short range force constant model to understand the role of phonon in this system. The calculations involves interatomic force constants upto third neighbour. The calculated zone centre phonon frequencies in Raman mode, agrees well with available existing results.

  9. Oxidation protection of Ti-aluminide orthorhombic alloys: An engineered multilayer approach

    SciTech Connect

    Warrier, S.G.; Krishnamurthy, S.; Smith, P.R.

    1998-04-01

    The lack of high-temperature environmental resistance is a major issue in the application of orthorhombic-based titanium aluminide alloys (O alloys) and their composites. Improvement in environmental capability can be achieved by applying diffusion barrier coatings to the surface of the orthorhombic matrix alloy. However, since thin coatings are prone to foreign-object damage, an approach based on thicker multilayer materials may be more prudent for fracture-critical applications. In the present study, foils of the orthorhombic alloy were diffusion bonded on either side with a {gamma} alloy, the latter used in an attempt to provide environmental protection. Mechanical tests suggested that the {gamma} alloy was successful in preventing degradation of the O alloy due to oxidation and interstitial embrittlement under thermal cycling conditions. Processing below the {beta} transus of the O alloy provided an improvement in the stress and strain to failure of the joined material compared to materials processed above the transus. However, in either case, the strengths of the joined materials were significantly lower than that of the uncoated O alloy with similar microstructures. Results suggest that the low strength of the joined materials may be due to cracking of the {gamma} alloy, resulting in premature failure of the O alloy. Finite element analysis (FEA) was performed to understand the stress distribution in the joined material and to investigate approaches for reducing the residual stress. Several approaches for improving the stress and strain to failure of the joined material are presented.

  10. Tape cast second generation orthorhombic-based titanium aluminide alloys for MMC applications. [Metal Matrix Composites

    SciTech Connect

    Smith, P.R.; Rosenberger, A.H. . Materials and Mfg. Directorate); Shepard, M.J. )

    1999-06-18

    Titanium metal matrix composites (TMCs) utilizing continuous SiC fiber reinforcement are considered important, if not, enabling materials for advanced Air Force propulsion systems, wherein combinations of high specific strength and elevated temperature capability are prerequisites to obtain desired increases in thrust-to-weight ratios and decreased specific fuel consumption. One such class of TMCs being assessed for use in rotating engine components are those based upon the orthorhombic titanium aluminide phase, Ti[sub 2]AlNb. These orthorhombic titanium matrix composites (O TMCs) are being examined for sustained use at temperatures up to 700 C. Previous studies have primarily focused on O TMCs made using the foil-fiber-foil fabrication process. More recently the Materials and Manufacturing Directorate of the Air Force Research Laboratory has been focusing attention on an alternative powder metallurgy approach for fabrication of O TMCs via tape casting. This latter approach has the potential to produce significant cost reduction (<$70/lb) for the matrix input material (powder). Unfortunately, little work has been done to understand the effects of powder microstructures and the tape casting process itself on the mechanical performance of O TMCs. Therefore, the first objective of this study is to examine the microstructural evolution and mechanical performance (with and without heat treatment) of three unreinforced heat orthorhombic-based titanium aluminide matrices made via tape casting. A second objective is to assess the viability of powder metallurgy processing for the fabrication of O TMCs.

  11. Secondary cell with orthorhombic alkali metal/manganese oxide phase active cathode material

    DOEpatents

    Doeff, M.M.; Peng, M.Y.; Ma, Y.; Visco, S.J.; DeJonghe, L.C.

    1996-09-24

    An alkali metal manganese oxide secondary cell is disclosed which can provide a high rate of discharge, good cycling capabilities, good stability of the cathode material, high specific energy (energy per unit of weight) and high energy density (energy per unit volume). The active material in the anode is an alkali metal and the active material in the cathode comprises an orthorhombic alkali metal manganese oxide which undergoes intercalation and deintercalation without a change in phase, resulting in a substantially linear change in voltage with change in the state of charge of the cell. The active material in the cathode is an orthorhombic structure having the formula M{sub x}Z{sub y}Mn{sub (1{minus}y)}O{sub 2}, where M is an alkali metal; Z is a metal capable of substituting for manganese in the orthorhombic structure such as iron, cobalt or titanium; x ranges from about 0.2 in the fully charged state to about 0.75 in the fully discharged state, and y ranges from 0 to 60 atomic %. Preferably, the cell is constructed with a solid electrolyte, but a liquid or gelatinous electrolyte may also be used in the cell. 11 figs.

  12. Comparative compressibility and equation of state of orthorhombic and tetragonal edingtonite

    NASA Astrophysics Data System (ADS)

    Gatta, G. D.; Ballaran, T. Boffa; Comodi, P.; Zanazzi, P. F.

    The high-pressure (HP) behaviour of a natural orthorhombic and tetragonal edingtonite from Ice River, Canada, has been investigated using in situ single-crystal X-ray diffraction. The two isothermal equations of state up to 6.74(5) GPa were determined. V0, KT0 and K' refined with a third-order Birch-Murnaghan equation of state (BM-EoS) are: V0 = 598.70(7) Å3, KT0 = 59(1) GPa and K'=3.9(4) for orthorhombic edingtonite and V0 = 600.9(2) Å3, KT0 = 59(1) GPa and K'=4.2(5) for tetragonal edingtonite. The experiments were conducted with nominally hydrous pressure penetrating transmitting medium. No overhydration effect was observed within the pressure range investigated. At high-pressures the main deformation mechanism is represented by cooperative rotation of the secondary building unit (SBU).Si/Al distribution slightly influences the elastic behaviour of the tetrahedral framework: the SBU bulk moduli are 125(8) GPa and 111(4) GPa for orthorhombic and tetragonal edingtonite, respectively. Extra-framework contents of both zeolites show an interesting behaviour under HP conditions: the split Ba2 site at P >2.85 GPa is completely empty; only the position Ba1 is occupied. Electronic Supplementary Material. Supplementary material to this paper (Observed and calculated structure factors) is available in electronic form at http://dx.doi.org/10.1007/s00269-004-0394-y.

  13. Secondary cell with orthorhombic alkali metal/manganese oxide phase active cathode material

    DOEpatents

    Doeff, Marca M.; Peng, Marcus Y.; Ma, Yanping; Visco, Steven J.; DeJonghe, Lutgard C.

    1996-01-01

    An alkali metal manganese oxide secondary cell is disclosed which can provide a high rate of discharge, good cycling capabilities, good stability of the cathode material, high specific energy (energy per unit of weight) and high energy density (energy per unit volume). The active material in the anode is an alkali metal and the active material in the cathode comprises an orthorhombic alkali metal manganese oxide which undergoes intercalation and deintercalation without a change in phase, resulting in a substantially linear change in voltage with change in the state of charge of the cell. The active material in the cathode is an orthorhombic structure having the formula M.sub.x Z.sub.y Mn.sub.(1-y) O.sub.2, where M is an alkali metal; Z is a metal capable of substituting for manganese in the orthorhombic structure such as iron, cobalt or titanium; x ranges from about 0.2 in the fully charged state to about 0.75 in the fully discharged state, and y ranges from 0 to 60 atomic %. Preferably, the cell is constructed with a solid electrolyte, but a liquid or gelatinous electrolyte may also be used in the cell.

  14. Structural, electronic and optical properties of orthorhombic CdGeO{sub 3} from first principles calculations

    SciTech Connect

    Barboza, C.A.; Henriques, J.M.; Albuquerque, E.L.; Caetano, E.W.S.; Freire, V.N.; Costa, J.A.P. da

    2010-02-15

    Orthorhombic perovskite CdGeO{sub 3} was studied using the density-functional theory (DFT) formalism. The electronic band structure, density of states, effective masses, dielectric function and optical absorption were obtained. Comparing with orthorhombic CaGeO{sub 3}, which is an indirect S->GAMMA gap material, the substitution of calcium by cadmium changes the valence band maximum from the S point to the GAMMA point in reciprocal space, and decreases the Kohn-Sham band gap energy. Our results suggest that orthorhombic CdGeO{sub 3} has features of a semiconductor and is potentially useful for optoelectronic applications. - Abstract: Graphical Abstract Legend (TOC Figure): Different views of the unit cell of orthorhombic CdGeO{sub 3} (left, top). The electronic band structure near the main gap and the partial density of states (PDOS) are shown also (right), as well as the optical absorption for different polarizations of incident light (left, bottom).

  15. Liquid phase epitaxial growth of bismuth based superconductors

    NASA Astrophysics Data System (ADS)

    Takemoto, J.; Miyashita, S.; Inoue, T.; Komatsu, H.

    1996-05-01

    The liquid phase epitaxial growth of superconducting films of Bi 2Sr 2CaCu 2O y (2212 phase) and Bi 2Sr 2CuO z (2201 phase) were carried out on three types of substrates; SrTiO 3, LaAlO 3 and NdGaO 3. Twinning structures of the 2212 phase were observed in the films grown on the SrTiO 3 (100) and LaAlO 3 (100) substrates which belong to the cubic crystal system, while nearly twin-free structures were obtained when the film was grown on the NdGaO 3 (001) substrate (orthorhombic system). Atomic force microscopy revealed a 2201 phase film with a reasonably flat area (several μm 2) grown on the LaAlO 3 (100) substrate. It was observed that the 2212 phase nucleated on the substrate following the Volmer-Weber type mechanism (three-dimensional island growth mode). The enlarging processes of the island layers were discussed.

  16. Molecular Beam Epitaxy of

    NASA Astrophysics Data System (ADS)

    Hsieh, Kuan Hsiung

    Ga(,0.48)In(,0.52)As recently emerges as a promising material for high speed applications. It also has a direct bandgap with gap energy suitable for optical applications. It is the purpose of this thesis to grow high quality Ga(,0.47)In(,0.53)As, lattice-matched Al(,0.48)In(,0.52)As and heterojunction structures by molecular beam epitaxy technique for applications in the areas of modulation-doped high mobility devices and internal photoemission Schottky diodes for infrared detection. Single crystal Al metal deposition on GaInAs by MBE is also studied for its electrical properties. Mobility enhancement has been demonstrated in modulation-doped structures at low temperatures. Very high mobilities were obtained: 10,900 cm('2)/Vs at room temperature, 55,500 cm('2)/Vs at 77K and 70,200 cm('2)/Vs at 10K with corresponding two-dimensional electron gas densities greater than 1 x 10('12) l/cm('2). The quality of Ga(,0.47)In(,0.53)As and the parallel conduction in this material are the limiting factors in its mobility. A new ohmic contact phenomenon has been observed in the MBE single crystal Al metal on Ga(,0.47)In(,0.53)AS samples. Its contact resistivity is measured to be as small as 1 x 10('-6) (OMEGA)-cm('2). The Fermi-level pinning near the conduction band edge might be caused by the interface defects. A planar doping technique has been employed to enhance the built-in barrier height to a value of about 0.5 eV in the single crystal Al on n-p('+)-n-Ga(,0.47)In(,0.52)As structures. This novel quasi-Schottky diode also shows a forward ideal factor of 1.03. As for optical detectors, four kinds of diodes were made for internal photoemission studies: Au Schottky on Ga(,0.47)In(,0.53)As in the wavelength range of 1.9 (mu)m to 2.5 (mu)m, Au Schottky on Al(,0.48)In(,0.52)As in 1.1 (mu)m to 2.0 (mu)m range, single crystal Al on (Al(,0.8)Ga(,0.2))(,0.48)In(,0.52)As with improved quantum yields and lastly a Ga(,0.47)In(,0.53)As/Al(,0.48)In(,0.52)As heterojunction with a measured

  17. [Effect of crystallization and branch on fine structure of orthorhombic in polyethylene].

    PubMed

    Kang, N; Xu, Y; Weng, S; Wu, J; Xu, D

    2001-02-01

    The CH2 rocking bands are used as a probe to monitor the crystalline behavior of polyethylene segments in a series of poly (ethylene-octene) copolymers. High resolution and cryogenic FTIR spectra reveal that different composition and/or crystalline condition of the copolymers result in significant variation on the CH2 rocking bands including the change in peak position, band width and A730/A720. We conclude that side chain in the copolymer can influence the structure of the orthorhombic polyethylene crystallite although they can not enter the crystal lattice.

  18. Structure of the welding zone between titanium and orthorhombic titanium aluminide for explosion welding: I. Interface

    NASA Astrophysics Data System (ADS)

    Rybin, V. V.; Grinberg, B. A.; Ivanov, M. A.; Kuz'min, S. V.; Lysak, V. I.; Elkina, O. A.; Patselov, A. M.; Inozemtsev, A. V.; Antonova, O. V.; Kozhevnikov, V. E.

    2011-10-01

    The structures of the interfaces and transition zones of bimetallic metal-intermetallide joints produced by explosion welding under various conditions have been studied. The welded materials were commercial-purity titanium and orthorhombic titanium aluminide of two alloying schemes. The specific features of the structure and substructure of the zones under study are discussed. Wave formation and formation of isolated vortex zones, as well as tracks of particles related to the transfer of particles of one metal into the other one, were observed. A possible scenario of formation of interfaces, depending on the composition of titanium aluminide and welding conditions, is proposed.

  19. Minimum strain rate and primary transient creep analysis of a fine structure orthorhombic titanium aluminide

    SciTech Connect

    Hayes, R.W.

    1996-03-15

    The purpose of the present paper is to present a preliminary analysis of the primary transient creep behavior of an orthorhombic titanium aluminide having a very fine microstructure. In order to analyze and understand the creep behavior within the primary transient regime it is necessary to understand the mechanisms controlling deformation within the minimum strain rate region. Therefore an analysis of the minimum strain rate behavior is also presented. It will be shown that the primary transient creep behavior is dependent upon whether creep in the minimum strain rate region is controlled by a viscous flow mechanism or a dislocation mechanism.

  20. Stability of the ordered orthorhombic phase in Ti-24Al-11Nb

    NASA Technical Reports Server (NTRS)

    Hsiung, L. M.; Wadley, H. N. G.

    1992-01-01

    The ordered orthorhombic 'O' phase in the Ti-Al-Nb ordered alloy system emerges either through slow cooling from above 1200 C or through isothermal aging after quenching from that temperature regime. An experimental investigation is presently conducted of the structural relationship between the O and alpha(2) phases, in order to clarify the mechanism of transition between the two. The transition occurs with the formation of a platelike alpha(2) phase within the O matrix, and may be characterized as due to a shape-deformation mechanism associated with diffusion of excess Nb away from the O/alpha(2) interface.

  1. Temperature and Pressure Sensors Based on Spin-Allowed Broadband Luminescence of Doped Orthorhombic Perovskite Structures

    NASA Technical Reports Server (NTRS)

    Eldridge, Jeffrey I. (Inventor); Chambers, Matthew D. (Inventor)

    2014-01-01

    Systems and methods that are capable of measuring pressure or temperature based on luminescence are discussed herein. These systems and methods are based on spin-allowed broadband luminescence of sensors with orthorhombic perovskite structures of rare earth aluminates doped with chromium or similar transition metals, such as chromium-doped gadolinium aluminate. Luminescence from these sensors can be measured to determine at least one of temperature or pressure, based on either the intense luminescence of these sensors, even at high temperatures, or low temperature techniques discussed herein.

  2. Comparing hydrostatic-pressure- and epitaxial-strain-induced phase transitions in multiferroic PbNiO3 from first principles

    NASA Astrophysics Data System (ADS)

    Tian, Hao; Kuang, Xiao-Yu; Mao, Ai-Jie; Zhao, Hong-Jian; Li, Hui; Kuang, Fang-Guang

    2015-02-01

    First-principles calculations are performed to simulate hydrostatic pressure and misfit strain effect on PbNiO3 (PNO) material. Significant difference between hydrostatic pressure and misfit strain effect is discovered. That is (1) a hydrostatic-pressure-induced phase transition from a rhombohedral R3c phase to an orthorhombic Pnma phase emerges around 6 GPa; and (2) an epitaxial-strain-induced phase transition from a monoclinic Cc phase (the sequel to a monoclinic distortion from R3c) to an orthorhombic Pbnm phase occurs about -3.3% misfit strain. Besides, the behaviors of oxygen octahedra tilting, polarization and the magnetic ordering temperature TN have been found to be strikingly affected by the variation of hydrostatic pressure and misfit strain, respectively. Finally, origins of the induced phase transitions are revealed.

  3. Epitaxial silicon growth for solar cells

    NASA Technical Reports Server (NTRS)

    Daiello, R. V.; Robinson, P. H.; Richman, D.

    1979-01-01

    The epitaxial procedures, solar cell fabrication, and evaluation techniques are described. The development of baseline epitaxial solar cell structures grown on high quality conventional silicon substrates is discussed. Diagnostic layers and solar cells grown on four potentially low cost silicon substrates are considered. The crystallographic properties of such layers and the performance of epitaxially grown solar cells fabricated on these materials are described. An advanced epitaxial reactor, the rotary disc, is described along with the results of growing solar cell structures of the baseline type on low cost substrates. The add on cost for the epitaxial process is assessed and the economic advantages of the epitaxial process as they relate to silicon substrate selection are examined.

  4. Epitaxial Garnets and Hexagonal Ferrites.

    DTIC Science & Technology

    1982-04-20

    Iron Garnet Liquid Phase Epitaxy Hexagonal Ferrite microwave Signal Processing Millimeter-Wave 20. ABSTRACT (Continue ani revee arde if necoeermy and...le.’uIfy by block rns.) e objective of this research is to develop new and improved epitauial ferrite materials for use in microwave and millimeter... ferrite films suitable for microwave and millimeter-wave signal processing at frequencies above 1 GHz. The specific tasks are: a. Analyze and develop

  5. Recent developments in droplet epitaxy

    SciTech Connect

    Mano, Takaaki; Jo, Masafumi; Kuroda, Takashi; Abbarchi, Marco; Noda, Takeshi; Sakoda, Kazuaki

    2014-05-15

    The droplet epitaxy allows for self-assembly of lattice-matched GaAs quantum dots (QDs) with high quality and high uniformity. In this article, we show our efforts to realize the GaAs QDs with excellent optical properties. After the optimization of the several growth processes, we achieved current-injection lasing in the GaAs QDs. In addition, formation of further advanced nanostructure is presented.

  6. Surface morphology of orthorhombic Mo2C catalyst and high coverage hydrogen adsorption

    NASA Astrophysics Data System (ADS)

    Wang, Tao; Tian, Xinxin; Yang, Yong; Li, Yong-Wang; Wang, Jianguo; Beller, Matthias; Jiao, Haijun

    2016-09-01

    High coverage hydrogen adsorption on twenty two terminations of orthorhombic Mo2C has been systematically studied by using density functional theory and ab initio thermodynamics. Hydrogen stable coverage on the surfaces highly depends on temperatures and H2 partial pressure. The estimated hydrogen desorption temperatures under ultra-high vacuum condition on Mo2C are in reasonable agreement with the available temperature-programmed desorption data. Obviously, hydrogen adsorption can affect the surface stability and therefore modify the surface morphology of Mo2C. Upon increasing the chemical potential of hydrogen which can be achieved by increasing the H2 partial pressure and/or decreasing the temperature, the proportions of the (001), (010), (011) and (100) surfaces increase, while those of the (101), (110) and (111) surfaces decrease. Among these surfaces, the (100) surface is most sensitive upon hydrogen adsorption and the (111) surface is most exposed under a wide range of conditions. Our study clearly reveals the role of hydrogen on the morphology of orthorhombic Mo2C catalyst in conjugation with hydro-treating activity.

  7. Formation of vortices during explosion welding (titanium-orthorhombic titanium aluminide)

    NASA Astrophysics Data System (ADS)

    Rybin, V. V.; Greenberg, B. A.; Antonova, O. V.; Elkina, O. A.; Ivanov, M. A.; Inozemtsev, A. V.; Patselov, A. M.; Sidorov, I. I.

    2009-10-01

    The possibility of cladding commercially pure titanium by a plate of orthorhombic titanium aluminide has been investigated. The bimetallic joints of orthorhombic titanium aluminide (Ti-30Al-16Nb-1Zr-1Mo) with commercially pure titanium have been obtained by explosion welding. It has been found that the weld joint investigated had a multilayer structure consisting of a zone of continuous deformation observed in both materials, a zone of titanium recrystallization, and a transition zone near the interface. Wave formation and formation of isolated vortex zones have been observed. It has been found that upon explosion welding the bonding of the surfaces is effected via melting and subsequent mixing (in the zone of vortices) and the transfer of particles of one metal into another with the formation of particle tracks (outside the zone of vortices). A possible scenario of the formation of the vortex zone in the melt with a subsequent eutectic decomposition is proposed. The structure of the vortex zones was found to consist of an ultrafine mixture of α and β grains (both phases are disordered) with the grain size changing in the limits of 50-300 nm. The regions of transition from the vortex zone to the region of continuous deformation of the aluminide and to the recrystallized zone of titanium have been investigated.

  8. The Facile Hydrothermal Preparation of Orthorhombic WO3 With (001) Facet and Its Photocatalytic Performance.

    PubMed

    Deng, Xiaoyan; Dou, Jinbiao; Li, Fenfen; Gao, Hongtao; Liu, Guangjun

    2015-12-01

    The orthorhombic WO3 nanoplates with (001) facet were fabricated via a facile hydrothermal process, using HBF4 as the acid source. The products were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM) and UV-vis diffused reflectance spectroscopy (DRS), respectively. It indicated that the obtained product was orthorhombic WO3 (JCPDS No. 20-1324). And the energy gap was estimated to be 2.52 eV by the intersection point of the tangent of the absorption edge and the baseline. It was affirmed that WO3 crystalline grew along the (001) direction, indicating the product was exposed with (001) facet. The photocatalytic activity of (001) WO3 nanoplates was investigated on the degradation of Rhodamine B (RhB). It demonstrated that photocatalysts exhibited obvious photocatalytic performance under visible light irradiation. The degradation rate of RhB with the typical product reached 95% after being irradiated for 5 h. It indicated that the photocatalytic efficiency of WO3 could be improved by controlling the crystal growth and its morphology.

  9. Epitaxial growth of CZT(S,Se) on silicon

    DOEpatents

    Bojarczuk, Nestor A.; Gershon, Talia S.; Guha, Supratik; Shin, Byungha; Zhu, Yu

    2016-03-15

    Techniques for epitaxial growth of CZT(S,Se) materials on Si are provided. In one aspect, a method of forming an epitaxial kesterite material is provided which includes the steps of: selecting a Si substrate based on a crystallographic orientation of the Si substrate; forming an epitaxial oxide interlayer on the Si substrate to enhance wettability of the epitaxial kesterite material on the Si substrate, wherein the epitaxial oxide interlayer is formed from a material that is lattice-matched to Si; and forming the epitaxial kesterite material on a side of the epitaxial oxide interlayer opposite the Si substrate, wherein the epitaxial kesterite material includes Cu, Zn, Sn, and at least one of S and Se, and wherein a crystallographic orientation of the epitaxial kesterite material is based on the crystallographic orientation of the Si substrate. A method of forming an epitaxial kesterite-based photovoltaic device and an epitaxial kesterite-based device are also provided.

  10. Stripe Domain Structure in Epitaxial (001) BiFeO3 Thin Films on Orthorhombic TbScO3 Substrate

    DTIC Science & Technology

    2009-06-26

    nm were deposited by off- axis radio frequency magnetron sputtering at 690 °C.3 The fact the growth temperature is below the paraelectric to...Energy, Office of Basic Energy Science under Contract No. DMR -0820404, 0507146, and 0908718. Work at Pennsylvania State Univer- sity was supported by

  11. Body-centered orthorhombic C16: A novel topological node-line semimetal

    DOE PAGES

    Wang, Jian -Tao; Weng, Hongming; Nie, Simin; ...

    2016-05-11

    We identify by ab initio calculations a novel topological semimetal carbon phase in all-sp2 bonding networks with a 16-atom body-centered orthorhombic unit cell, termed bco-C16. Total-energy calculations show that bco-C16 is comparable to solid fcc-C60 in energetic stability, and phonon and molecular dynamics simulations confirm its dynamical stability. This all-sp2 carbon allotrope can be regarded as a three-dimensional modification of graphite, and its simulated x-ray diffraction (XRD) pattern matches well a previously unexplained diffraction peak in measured XRD spectra of detonation and chimney soot, indicating its presence in the specimen. Electronic band structure calculations reveal that bco-C16 is a topologicalmore » node-line semimetal with a single nodal ring. Lastly, these findings establish a novel carbon phase with intriguing structural and electronic properties of fundamental significance and practical interest.« less

  12. Enhancement of the antimicrobial properties of orthorhombic molybdenum trioxide by thermal induced fracturing of the hydrates.

    PubMed

    Shafaei, Shahram; Van Opdenbosch, Daniel; Fey, Tobias; Koch, Marcus; Kraus, Tobias; Guggenbichler, Josef Peter; Zollfrank, Cordt

    2016-01-01

    The oxides of the transition metal molybdenum exhibit excellent antimicrobial properties. We present the preparation of molybdenum trioxide dihydrate (MoO3 × 2H2O) by an acidification method and demonstrate the thermal phase development and morphological evolution during and after calcination from 25 °C to 600 °C. The thermal dehydration of the material was found to proceed in two steps. Microbiological roll-on tests using Staphylococcus aureus, Escherichia coli and Pseudomonas aeruginosa were performed and exceptional antimicrobial activities were determined for anhydrous samples with orthorhombic lattice symmetry and a large specific surface area. The increase in the specific surface area is due to crack formation and to the loss of the hydrate water after calcination at 300 °C. The results support the proposed antimicrobial mechanism for transition metal oxides, which based on a local acidity increase as a consequence of the augmented specific surface area.

  13. Orthorhombic boron oxide under pressure: In situ study by X-ray diffraction and Raman scattering

    NASA Astrophysics Data System (ADS)

    Cherednichenko, Kirill A.; Le Godec, Yann; Kalinko, Aleksandr; Mezouar, Mohamed; Solozhenko, Vladimir L.

    2016-11-01

    High-pressure phase of boron oxide, orthorhombic β-B2O3, has been studied in situ by synchrotron X-ray diffraction to 22 GPa and Raman scattering to 46 GPa at room temperature. The bulk modulus of β-B2O3 has been found to be 169(3) GPa that is in good agreement with our ab initio calculations. Raman and IR spectra of β-B2O3 have been measured at ambient pressure; all experimentally observed bands have been attributed to the theoretically calculated ones, and the mode assignment has been performed. Based on the data on Raman shift as a function of pressure, combined with equation-of-state data, the Grüneisen parameters of all experimentally observed Raman bands have been calculated. β-B2O3 enriched by 10B isotope has been synthesized, and the effect of boron isotopic substitution on Raman spectra has been studied.

  14. Failure development around a borehole in an orthorhombic thermo-elastoplastic rock medium

    NASA Astrophysics Data System (ADS)

    Piłacik, Alicja; Dąbrowski, Marcin

    2016-04-01

    The elastic anisotropy of a rock medium is one of the main factors affecting stress distribution around the borehole. It governs the initiation and propagation of the technologically induced compressive and tensile failure zones, and reopening of natural mechanical discontinuities. We conducted a two-dimensional analysis of failure around a pressurized horizontal borehole in an orthorhombic elastic rock medium subject to variable far-field loads. The analytical solution to the thermoelastic problem was derived. An elastoplastic finite element method code was developed using MILAMIN platform (milamin.org) and implemented in MATLAB. Various yield functions were used, including von Mises, Mohr-Coulomb, Drucker-Prager and Hoek-Brown failure criteria. The analysis was augmented by introducing rock heterogeneities and discrete mechanical discontinuities in the vicinity of the borehole.

  15. Locked octahedral tilting in orthorhombic perovskites: At the boundary of the general rule predicting phase transitions

    NASA Astrophysics Data System (ADS)

    Ardit, M.; Dondi, M.; Cruciani, G.

    2017-01-01

    Mainly ruled by oxygen octahedral rotations, perovskite oxides can exhibit zone boundary transitions (ZBTs) either with d Tc/d P >0 or d Tc/d P <0 . Synchrotron structural investigations at high pressure conditions place YA l0.25C r0.75O3 orthorhombic perovskite at the boundary of ZBTs. The absence of changes in the octahedral tilting and a volume reduction with pressure exclusively controlled by an isotropic polyhedral compression set YA l0.25C r0.75O3 as the first finding of a possible asymptote at the Clapeyron relation for predicting ZBTs in perovskites. Furthermore, the discovery of a "locked-tilt perovskite" can pave the way to a new class of functional materials.

  16. Electron-phonon scattering effects on electronic and optical properties of orthorhombic GeS

    NASA Astrophysics Data System (ADS)

    Villegas, Cesar E. P.; Rocha, A. R.; Marini, Andrea

    2016-10-01

    Group-VI monochalcogenides are attracting a great deal of attention due to their peculiar anisotropic properties. Very recently, it has been suggested that GeS could act as a promissory absorbing material with high input-output ratios, which are relevant features for designing prospective optoelectronic devices. In this work, we use the ab initio many-body perturbation theory to study the role of electron-phonon coupling on orthorhombic GeS. We identify the vibrational modes that efficiently couple with the electronic states responsible for giving rise to the first and second excitonic state. We also study finite-temperature optical absorption, and we show that even at T →0 K , the role of the electron-phonon interaction is crucial to properly describe the position and width of the main experimental excitation peaks. Our results suggest that the electron-phonon coupling is essential to properly describe the optical properties of the monochalcogenides family.

  17. Epitaxial growth of europium monoxide on diamond

    SciTech Connect

    Melville, A.; Heeg, T.; Mairoser, T.; Schmehl, A.; Fischer, M.; Gsell, S.; Schreck, M.; Awschalom, D. D.; Holländer, B.; Schubert, J.; Schlom, D. G.

    2013-11-25

    We report the epitaxial integration of phase-pure EuO on both single-crystal diamond and on epitaxial diamond films grown on silicon utilizing reactive molecular-beam epitaxy. The epitaxial orientation relationship is (001) EuO ‖ (001) diamond and [110] EuO ‖[100] diamond. The EuO layer is nominally unstrained and ferromagnetic with a transition temperature of 68 ± 2 K and a saturation magnetization of 5.5 ± 0.1 Bohr magnetons per europium ion on the single-crystal diamond, and a transition temperature of 67 ± 2 K and a saturation magnetization of 2.1 ± 0.1 Bohr magnetons per europium ion on the epitaxial diamond film.

  18. Thermoelectric properties of orthorhombic group IV-VI monolayers from the first-principles calculations

    NASA Astrophysics Data System (ADS)

    Guo, San-Dong; Wang, Yue-Hua

    2017-01-01

    Two-dimensional (2D) materials may have potential applications in thermoelectric devices. In this work, the thermoelectric properties of orthorhombic group IV-VI monolayers AB (A = Ge and Sn; B = S and Se) are systematically investigated by the first-principles calculations and semiclassical Boltzmann transport theory. The spin-orbit coupling (SOC) is considered for their electron part, which produces observable effects on the power factor, especially for n-type doping. According to the calculated ZT, the four monolayers exhibit diverse anisotropic thermoelectric properties although they have a similar hinge-like crystal structure. The GeS along zigzag and armchair directions shows the strongest anisotropy, while SnS and SnSe show mostly isotropic efficiency of thermoelectric conversion. This can be explained by the strength of anisotropy of their respective power factor and electronic and lattice thermal conductivities. The calculated results show that the ZT between n- and p-type doping has little difference for GeS, SnS, and SnSe. It is found that GeSe, SnS, and SnSe show better thermoelectric performance compared to GeS in n-type doping and that SnS and SnSe exhibit higher efficiency of thermoelectric conversion in p-type doping. Compared to other many 2D materials, orthorhombic group IV-VI monolayers AB (A = Ge and Sn; B = S and Se) may possess better thermoelectric performance due to lower lattice thermal conductivities. Our work would be beneficial to stimulate further theoretical and experimental works.

  19. The scattering potential of partial derivative wavefields in 3-D elastic orthorhombic media: an inversion prospective

    NASA Astrophysics Data System (ADS)

    Oh, Ju-Won; Alkhalifah, Tariq

    2016-09-01

    Multiparameter full waveform inversion (FWI) applied to an elastic orthorhombic model description of the subsurface requires in theory a nine-parameter representation of each pixel of the model. Even with optimal acquisition on the Earth surface that includes large offsets, full azimuth, and multicomponent sensors, the potential for trade-off between the elastic orthorhombic parameters are large. The first step to understanding such trade-off is analysing the scattering potential of each parameter, and specifically, its scattering radiation patterns. We investigate such radiation patterns for diffraction and for scattering from a horizontal reflector considering a background isotropic model. The radiation patterns show considerable potential for trade-off between the parameters and the potentially limited resolution in their recovery. The radiation patterns of C11, C22, and C33 are well separated so that we expect to recover these parameters with limited trade-offs. However, the resolution of their recovery represented by recovered range of model wavenumbers varies between these parameters. We can only invert for the short wavelength components (reflection) of C33 while we can mainly invert for the long wavelength components (transmission) of the elastic coefficients C11 and C22 if we have large enough offsets. The elastic coefficients C13, C23, and C12 suffer from strong trade-offs with C55, C44, and C66, respectively. The trade-offs between C13 and C55, as well as C23 and C44, can be partially mitigated if we acquire P-SV and SV-SV waves. However, to reduce the trade-offs between C12 and C66, we require credible SH-SH waves. The analytical radiation patterns of the elastic constants are supported by numerical gradients of these parameters.

  20. Growth of (111)-oriented epitaxial and textured ferroelectric Y-doped HfO2 films for downscaled devices

    NASA Astrophysics Data System (ADS)

    Katayama, Kiliha; Shimizu, Takao; Sakata, Osami; Shiraishi, Takahisa; Nakamura, Syogo; Kiguchi, Takanori; Akama, Akihiro; Konno, Toyohiko J.; Uchida, Hiroshi; Funakubo, Hiroshi

    2016-09-01

    In this study, the growth of (111)-oriented epitaxial and textured YO1.5-HfO2 (0.07:0.93 ratio) films using the pulsed laser deposition method is presented. Epitaxial films were prepared on ITO//(111)yttria-stabilized zirconia (YSZ) substrates (ITO: Sn-doped In2O3; YSZ: yttria-stabilized zirconia), while textured films were prepared on (111)Pt/TiOx/SiO2//Si substrates with and without an ITO buffer layer via the grain on grain coherent growth. Inserting an ITO layer increased the volume fraction of the ferroelectric orthorhombic phase. Both the epitaxial and uniaxially textured films exhibited similar ferroelectricity with a remanent polarization of around 10 μC/cm2 and a coercive field of 1.9 to 2.0 MV/cm. These results present us with a way of obtaining stable and uniform ferroelectric properties for each grain and device cells consisting of a small number of grains. This opens the door for ultimately miniaturized ferroelectric devices, such as ferroelectric field effect transistors with small gate length and resistive random access memory using ferroelectric tunnel junctions.

  1. Strain tuning of electronic structure in Bi4Ti3O12-LaCoO3 epitaxial thin films

    DOE PAGES

    Choi, Woo Seok; Lee, Ho Nyung

    2015-05-08

    In this study, we investigated the crystal and electronic structures of ferroelectric Bi4Ti3O12 single-crystalline thin films site-specifically substituted with LaCoO3 (LCO). The epitaxial films were grown by pulsed laser epitaxy on NdGaO3 and SrTiO3 substrates to vary the degree of strain. With increasing the LCO substitution, we observed a systematic increase in the c-axis lattice constant of the Aurivillius phase related with the modification of pseudo-orthorhombic unit cells. These compositional and structural changes resulted in a systematic decrease in the band gap, i.e., the optical transition energy between the oxygen 2p and transition-metal 3d states, based on a spectroscopic ellipsometrymore » study. In particular, the Co 3d state seems to largely overlap with the Ti t2g state, decreasing the band gap. Interestingly, the applied tensile strain facilitates the band-gap narrowing, demonstrating that epitaxial strain is a useful tool to tune the electronic structure of ferroelectric transition-metal oxides.« less

  2. Molecular-Beam-Epitaxy Program

    NASA Technical Reports Server (NTRS)

    Sparks, Patricia D.

    1988-01-01

    Molecular Beam Epitaxy (MBE) computer program developed to aid in design of single- and double-junction cascade cells made of silicon. Cascade cell has efficiency 1 or 2 percent higher than single cell, with twice the open-circuit voltage. Input parameters include doping density, diffusion lengths, thicknesses of regions, solar spectrum, absorption coefficients of silicon (data included for 101 wavelengths), and surface recombination velocities. Results include maximum power, short-circuit current, and open-circuit voltage. Program written in FORTRAN IV.

  3. Artificial chemical and magnetic structure at the domain walls of an epitaxial oxide

    NASA Astrophysics Data System (ADS)

    Farokhipoor, S.; Magén, C.; Venkatesan, S.; Íñiguez, J.; Daumont, C. J. M.; Rubi, D.; Snoeck, E.; Mostovoy, M.; de Graaf, C.; Müller, A.; Döblinger, M.; Scheu, C.; Noheda, B.

    2014-11-01

    Progress in nanotechnology requires new approaches to materials synthesis that make it possible to control material functionality down to the smallest scales. An objective of materials research is to achieve enhanced control over the physical properties of materials such as ferromagnets, ferroelectrics and superconductors. In this context, complex oxides and inorganic perovskites are attractive because slight adjustments of their atomic structures can produce large physical responses and result in multiple functionalities. In addition, these materials often contain ferroelastic domains. The intrinsic symmetry breaking that takes place at the domain walls can induce properties absent from the domains themselves, such as magnetic or ferroelectric order and other functionalities, as well as coupling between them. Moreover, large domain wall densities create intense strain gradients, which can also affect the material's properties. Here we show that, owing to large local stresses, domain walls can promote the formation of unusual phases. In this sense, the domain walls can function as nanoscale chemical reactors. We synthesize a two-dimensional ferromagnetic phase at the domain walls of the orthorhombic perovskite terbium manganite (TbMnO3), which was grown in thin layers under epitaxial strain on strontium titanate (SrTiO3) substrates. This phase is yet to be created by standard chemical routes. The density of the two-dimensional sheets can be tuned by changing the film thickness or the substrate lattice parameter (that is, the epitaxial strain), and the distance between sheets can be made as small as 5 nanometres in ultrathin films, such that the new phase at domain walls represents up to 25 per cent of the film volume. The general concept of using domain walls of epitaxial oxides to promote the formation of unusual phases may be applicable to other materials systems, thus giving access to new classes of nanoscale materials for applications in nanoelectronics and

  4. Artificial chemical and magnetic structure at the domain walls of an epitaxial oxide.

    PubMed

    Farokhipoor, S; Magén, C; Venkatesan, S; Íñiguez, J; Daumont, C J M; Rubi, D; Snoeck, E; Mostovoy, M; de Graaf, C; Müller, A; Döblinger, M; Scheu, C; Noheda, B

    2014-11-20

    Progress in nanotechnology requires new approaches to materials synthesis that make it possible to control material functionality down to the smallest scales. An objective of materials research is to achieve enhanced control over the physical properties of materials such as ferromagnets, ferroelectrics and superconductors. In this context, complex oxides and inorganic perovskites are attractive because slight adjustments of their atomic structures can produce large physical responses and result in multiple functionalities. In addition, these materials often contain ferroelastic domains. The intrinsic symmetry breaking that takes place at the domain walls can induce properties absent from the domains themselves, such as magnetic or ferroelectric order and other functionalities, as well as coupling between them. Moreover, large domain wall densities create intense strain gradients, which can also affect the material's properties. Here we show that, owing to large local stresses, domain walls can promote the formation of unusual phases. In this sense, the domain walls can function as nanoscale chemical reactors. We synthesize a two-dimensional ferromagnetic phase at the domain walls of the orthorhombic perovskite terbium manganite (TbMnO3), which was grown in thin layers under epitaxial strain on strontium titanate (SrTiO3) substrates. This phase is yet to be created by standard chemical routes. The density of the two-dimensional sheets can be tuned by changing the film thickness or the substrate lattice parameter (that is, the epitaxial strain), and the distance between sheets can be made as small as 5 nanometres in ultrathin films, such that the new phase at domain walls represents up to 25 per cent of the film volume. The general concept of using domain walls of epitaxial oxides to promote the formation of unusual phases may be applicable to other materials systems, thus giving access to new classes of nanoscale materials for applications in nanoelectronics and

  5. Epitaxial Halide Perovskite Lateral Double Heterostructure.

    PubMed

    Wang, Yiping; Chen, Zhizhong; Deschler, Felix; Sun, Xin; Lu, Toh-Ming; Wertz, Esther A; Hu, Jia-Mian; Shi, Jian

    2017-03-28

    Epitaxial III-V semiconductor heterostructures are key components in modern microelectronics, electro-optics, and optoelectronics. With superior semiconducting properties, halide perovskite materials are rising as promising candidates for coherent heterostructure devices. In this report, spinodal decomposition is proposed and experimentally implemented to produce epitaxial double heterostructures in halide perovskite system. Pristine epitaxial mixed halide perovskites rods and films were synthesized via van der Waals epitaxy by chemical vapor deposition method. At room temperature, photon was applied as a knob to regulate the kinetics of spinodal decomposition and classic coarsening. By this approach, halide perovskite double heterostructures were created carrying epitaxial interfaces and outstanding optical properties. Reduced Fröhlich electron-phonon coupling was discovered in coherent halide double heterostructure, which is hypothetically attributed to the classic phonon confinement effect widely existing in III-V double heterostructures. As a proof-of-concept, our results suggest that halide perovskite-based epitaxial heterostructures may be promising for high-performance and low-cost optoelectronics, electro-optics, and microelectronics. Thus, ultimately, for practical device applications, it may be worthy to pursue these heterostructures via conventional vapor phase epitaxy approaches widely practised in III-V field.

  6. Low-dimensional magnetic properties of orthorhombic MnV2O6 : A nonstandard structure stabilized at high pressure

    NASA Astrophysics Data System (ADS)

    Hneda, M. L.; da Cunha, J. B. M.; Gusmão, M. A.; Neto, S. R. Oliveira; Rodríguez-Carvajal, J.; Isnard, O.

    2017-01-01

    This paper presents the physical properties of a nonstandard orthorhombic form of MnV2O6 , including a comparison with the isostructural orthorhombic niobate MnNb2O6 , and with the usual MnV2O6 monoclinic polymorph. Orthorhombic (P b c n ) MnV2O6 is obtained under extreme conditions of high pressure (6.7 GPa) and high temperature (800 ∘C ). A negative Curie-Weiss temperature θCW is observed, implying dominant antiferromagnetic interactions at high temperatures, in contrast to the positive θCW of the monoclinic form. Specific-heat measurements are reported down to 1.8 K for all three compounds, and corroborate the magnetic-transition temperatures obtained from susceptibility data. Orthorhombic MnV2O6 presents a transition to an ordered antiferromagnetic state at TN=4.7 K. Its magnetic structure, determined by neutron diffraction, is unique among the columbite compounds, being characterized by a commensurate propagation vector k =(0 ,0 ,1/2 ) . It presents antiferromagnetic chains running along the c axis, but with a different spin pattern in comparison to the chains observed in MnNb2O6 . By a comparative discussion of our observations in this three compounds, we are able to highlight the interplay between competing interactions and dimensionality that yield their magnetic properties.

  7. Ion implanted epitaxially grown ZnSe

    NASA Technical Reports Server (NTRS)

    1974-01-01

    The epitaxial growth of ZnSe on (100) Ge using the close-spaced transport process is described. Substrate temperature of 575 C and source temperatures of 675 C yield 10 micron, single crystal layers in 10 hours. The Ge substrates provides a nonreplenishable chemical transport agent and the epitaxial layer thickness is limited to approximately 10 microns. Grown epitaxial layers show excellent photoluminescence structure at 77 K. Grown layers exhibit high resistivity, and annealing in Zn vapor at 575 C reduces the resistivity to 10-100 ohms-cm. Zinc vapor annealing quenches the visible photoluminescence.

  8. Electroless epitaxial etching for semiconductor applications

    DOEpatents

    McCarthy, Anthony M.

    2002-01-01

    A method for fabricating thin-film single-crystal silicon on insulator substrates using electroless etching for achieving efficient etch stopping on epitaxial silicon substrates. Microelectric circuits and devices are prepared on epitaxial silicon wafers in a standard fabrication facility. The wafers are bonded to a holding substrate. The silicon bulk is removed using electroless etching leaving the circuit contained within the epitaxial layer remaining on the holding substrate. A photolithographic operation is then performed to define streets and wire bond pad areas for electrical access to the circuit.

  9. Structural, optoelectronic, infrared and Raman spectra of orthorhombic SrSnO{sub 3} from DFT calculations

    SciTech Connect

    Moreira, E.; Henriques, J.M.; Azevedo, D.L.; Caetano, E.W.S.; Freire, V.N.; Albuquerque, E.L.

    2011-04-15

    Orthorhombic SrSnO{sub 3} was investigated using density functional theory (DFT) considering both the local density and generalized gradient approximations, LDA and GGA, respectively. The electronic band structure, density of states, complex dielectric function, optical absorption, and the infrared and Raman spectra were computed. Calculated lattice parameters are close to the experimental measurements, and an indirect band gap E(S{yields}{Gamma})=1.97eV (2.27 eV) was obtained within the GGA (LDA) level of calculation. Effective masses for holes and electrons were estimated, being very anisotropic in comparison with similar results for orthorhombic CaSnO{sub 3}. The complex dielectric function and the optical absorption of SrSnO{sub 3} were shown to be sensitive to the plane of polarization of the incident light. The infrared spectrum between 100 and 600 cm{sup -1} was obtained, with its main peaks being assigned, and a nice agreement between experimental and theoretical peaks of the Raman spectrum of orthorhombic SrSnO{sub 3} was achieved. -- Graphical abstract: Orthorhombic SrSnO{sub 3}: a view of the unit cell (left) and plots showing the calculated and experimental Raman spectra (right). Display Omitted Research highlights: {yields} We have performed DFT calculations on orthorhombic SrSnO{sub 3} crystals, obtaining their structural, electronical and optical properties. {yields} An indirect band gap was obtained, and anisotropic effective masses were found for both electrons and holes. {yields} The complex dielectric function and the optical absorption of SrSnO{sub 3} were shown to be very sensitive to the plane of polarization of the incident light. {yields} The infrared spectrum between 100 and 600 cm{sup -1} was obtained, with its main peaks being assigned, and a nice agreement between experimental and theoretical peaks of the Raman spectrum was achieved.

  10. Epitaxial growth of silicon for layer transfer

    DOEpatents

    Teplin, Charles; Branz, Howard M

    2015-03-24

    Methods of preparing a thin crystalline silicon film for transfer and devices utilizing a transferred crystalline silicon film are disclosed. The methods include preparing a silicon growth substrate which has an interface defining substance associated with an exterior surface. The methods further include depositing an epitaxial layer of silicon on the silicon growth substrate at the surface and separating the epitaxial layer from the substrate substantially along the plane or other surface defined by the interface defining substance. The epitaxial layer may be utilized as a thin film of crystalline silicon in any type of semiconductor device which requires a crystalline silicon layer. In use, the epitaxial transfer layer may be associated with a secondary substrate.

  11. Amorphous/epitaxial superlattice for thermoelectric application

    NASA Astrophysics Data System (ADS)

    Ishida, Akihiro; Thao, Hoang Thi Xuan; Shibata, Mamoru; Nakashima, Seisuke; Tatsuoka, Hirokazu; Yamamoto, Hidenari; Kinoshita, Yohei; Ishikiriyama, Mamoru; Nakamura, Yoshiaki

    2016-08-01

    An amorphous/epitaxial superlattice system is proposed for application to thermoelectric devices, and the superlattice based on a PbGeTeS system was prepared by the alternate deposition of PbS and GeTe using a hot wall epitaxy technique. The structure was analyzed by high-resolution transmission electron microscopy (HRTEM) and X-ray analysis, and it was found that the superlattice consists of an epitaxial PbTe-based layer and a GeS-based amorphous layer by the reconstruction of the constituents. A reduction in thermal conductivity due to the amorphous/epitaxial system was confirmed by a 2ω method. Electrical and thermoelectric properties were measured for the samples.

  12. High-pressure orthorhombic ferromagnesite as a potential deep-mantle carbon carrier

    DOE PAGES

    Liu, Jin; Lin, Jung -Fu; Prakapenka, Vitali B.

    2015-01-06

    In this study, knowledge of the physical and chemical properties of candidate deep-carbon carriers such as ferromagnesite [(Mg,Fe)CO3] at high pressure and temperature of the deep mantle is necessary for our understanding of deep-carbon storage as well as the global carbon cycle of the planet. Previous studies have reported very different scenarios for the (Mg,Fe)CO3 system at deep-mantle conditions including the chemical dissociation to (Mg,Fe)O+CO2, the occurrence of the tetrahedrally-coordinated carbonates based on CO4 structural units, and various high-pressure phase transitions. Here we have studied the phase stability and compressional behavior of (Mg,Fe)CO3 carbonates up to relevant lower-mantle conditions ofmore » approximately 120 GPa and 2400 K. Our experimental results show that the rhombohedral siderite (Phase I) transforms to an orthorhombic phase (Phase II with Pmm2 space group) at approximately 50 GPa and 1400 K. The structural transition is likely driven by the spin transition of iron accompanied by a volume collapse in the Fe-rich (Mg,Fe)CO3 phases; the spin transition stabilizes the high-pressure phase II at much lower pressure conditions than its Mg-rich counterpart. It is conceivable that the low-spin ferromagnesite phase II becomes a major deep-carbon carrier at the deeper parts of the lower mantle below 1900 km in depth.« less

  13. Superconductivity at 3.1 K in the orthorhombic ternary silicide ScRuSi

    NASA Astrophysics Data System (ADS)

    Ruan, Bin-Bin; Wang, Xiao-Chuan; Yu, Jia; Pan, Bo-Jin; Mu, Qing-Ge; Liu, Tong; Chen, Gen-Fu; Ren, Zhi-An

    2017-02-01

    We report the synthesis, crystal structure, superconductivity and physical property characterizations of the ternary equiatomic compound ScRuSi. Polycrystalline samples of ScRuSi were prepared by an arc-melting method. The as-prepared samples were identified as the orthorhombic Co2P-type o-ScRuSi by powder x-ray diffraction analysis. Electrical resistivity measurements show o-ScRuSi to be a metal which superconducts below a T c of 3.1 K; the upper critical field μ 0 H c2(0) is estimated to be 0.87 T. The magnetization and specific heat measurements confirm the bulk type-II superconductivity in o-ScRuSi, with a specific heat jump within the BCS weak coupling limit. o-ScRuSi is the first Co2P-type superconductor to contain scandium. After annealing at 1273 K for a week, o-ScRuSi transforms into hexagonal Fe2P-type h-ScRuSi, which is a Pauli-paramagnetic metal with no superconductivity observed above 1.8 K.

  14. Molecular Structure and Dynamics in the Low Temperature (Orthorhombic) Phase of NH3BH3

    SciTech Connect

    Cho, Herman M.; Shaw, Wendy J.; Parvanov, Venci M.; Schenter, Gregory K.; Karkamkar, Abhijeet J.; Hess, Nancy J.; Mundy, Christopher J.; Kathmann, Shawn M.; Sears, Jesse A.; Lipton, Andrew S.; Ellis, Paul D.; Autrey, Thomas

    2008-05-08

    Variable temperature 2H NMR experiments on the orthorhombic phase of selectively deuterated NH3BH3 spanning the static to fast exchange limits of the borane and amine motions are reported. New values of the electric field gradient (EFG) tensor parameters have been obtained from the static 2H spectra of Vzz = 5.509(±0.275)×1014 statvolt/cm2 and ! = 0.00±0.05 for the borane hydrogens and Vzz = 9.615(±0.481)×1014 statvolt/cm2 and ! = 0.00±0.05 for the amine hydrogens. The molecular symmetry inferred from the observation of equal EFG tensors for both the boron and amine hydrogens is in sharp contrast with the Cs symmetry derived from diffraction studies. The origin of the apparent discrepancy has been investigated using molecular dynamics methods in combination with electronic structure calculations of NMR parameters, bond lengths, and bond angles. The computation of parameters from a statistical ensemble rather than from a single set of atomic Cartesian coordinates gives values that are in close quantitative agreement with the 2H NMR electric field gradient tensor measurements and are more consistent with the molecular symmetry revealed by the NMR spectra. This work was supported by the U.S. Department of Energy's (DOE) Office of Basic Energy Sciences, Chemical Sciences program. The Pacific Northwest National Laboratory is operated by Battelle for DOE.

  15. Magnetic performance of orthorhombic Mn35Ge35Te30 nanocrystals

    NASA Astrophysics Data System (ADS)

    Mahdy, Iman A.

    2017-01-01

    Nanocrystalline antiferromagnetic Mn35Ge35Te30 diluted magnetic semiconductors powder syntheses by the conventional direct reaction of pure metals. Nanocrystalline nature of the prepared sample confirmed using various techniques, where x-Ray diffraction (XRD) and atomic force microscope (AFM) measurements shows ~96 nm particle size, while transmission electron microscope (TEM) shows 92 nm particle size. XRD analysis show orthorhombic symmetry with lattice parameters a=7.386611±(0.0066) Å, b=8.962502±(0.0090) Å and c=7.027349±(0.0040) Å. Electron Spin resonance (ESR) show a broad asymmetric line whereas the remnant Mn2+ six-hyperfine lines are broadened within |+1/2>→|-1/2> line according to high anisotropy; calculated Landé g-factor is 2.047. Vibrating sample magnetometer (VSM) analysis, field-moment characteristics revealed a hysteresis loop with small coercive field indicating that Mn35Ge35Te30 is a soft magnetic material. Moreover, hysteresis measurements at different temperatures show increasing magnetization with increasing temperature up to 150 K followed by decreased with increasing temperature up to 300 K. This behavior indicated to the antiferromagnetic nature of the prepared nanocrystalline materials. Magnetic moment - temperature measurements show Néel temperature TN=172.6 K. Magnetic force microscope revealed magnetic domains as a result of interaction between magnetic dipole moments of magnetic cantilever and pressed powder.

  16. High-temperature deformation and failure of an orthorhombic titanium aluminide sheet material

    SciTech Connect

    Nicolaou, P.D.; Semiatin, S.L.

    1996-11-01

    The high-temperature deformation and failure behavior of an orthorhombic titanium aluminide sheet alloy (fabricated by diffusion bonding of six thin foils) was established by conducting uniaxial tension and plane-strain compression tests at 980 C and strain rates between 10{sup {minus}4} and 10{sup {minus}2} s{sup {minus}1}. The stress-strain response was characterized by a peak stress at low strains followed by moderate flow softening. Values of the strain-rate sensitivity index (m) were between 0.10 and 0.32, and the plastic anisotropy parameter (R) was of the order of 0.6 to 1.0. Cavity nucleation and growth were observed during tensile deformation at strain rates of 10{sup {minus}3} s{sup {minus}1} and higher. However, the combined effects of low m, low cavity growth rate {eta}, and flow softening were deduced to be the source of failure controlled by necking and flow localization rather than cavitation-induced fracture prior to necking.

  17. The compressibility of cubic white, orthorhombic black and rhombohedral black phosphorus

    SciTech Connect

    Clark, S; Zaug, J M

    2009-06-05

    The effect of pressure on the crystal structure of white phosphorus has been studied up to 22.4 GPa. The {alpha} phase was found to transform into the {alpha}' phase at 0.87 {+-} 0.04 GPa with a volume change of 0.1 {+-} 0.3 cc/mol. A fit of a second order Birch-Murghanan equation to the data gave Vo = 16.94 {+-} 0.08 cc/mol and K{sub o} = 6.7 {+-} 0.5 GPa for the {alpha} phase and Vo = 16.4 {+-} 0.1 cc/mol and K{sub o} = 9.1 {+-} 0.3 GPa for the {alpha}' phase. The {alpha}' phase was found to transform to the A17 phase of black phosphorus at 2.68 {+-} 0.34 GPa and then with increasing pressure to the A7 and then simple cubic phase of black phosphorus. A fit of a second order Birch-Murnaghan equation to our orthorhombic and rhombohedral black phosphorus data gave Vo = 11.43 {+-} 0.02 cc/mol and K{sub o} = 34.7 {+-} 0.5 GPa for the A17 phase and Vo = 9.62 {+-} 0.01 cc/mol and K{sub o} = 65.0 {+-} 0.6 GPa for the A7 phase.

  18. Thermal evolution of the crystal structure of the orthorhombic perovskite LaFeO{sub 3}

    SciTech Connect

    Dixon, Charlotte A.L.; Kavanagh, Christopher M.; Knight, Kevin S.; Kockelmann, Winfried; Morrison, Finlay D.; Lightfoot, Philip

    2015-10-15

    The thermal evolution of the crystal structure of the prototypical orthorhombic perovskite LaFeO{sub 3} has been studied in detail by powder neutron diffraction in the temperature range 25

  19. The nature of Mn4+ luminescence in the orthorhombic perovskite, GdAlO3

    NASA Astrophysics Data System (ADS)

    Srivastava, A. M.; Brik, M. G.

    2017-01-01

    In this paper we report on the spectroscopic properties of Mn4+ (3d3) ion in the orthorhombic perovskite, GdAlO3 and calculate the energy levels using the exchange charge model of crystal-field theory. The calculated Mn4+ energy levels are in good agreement with the experimental data. The results of our calculations yield the crystal-field splitting and Racah parameters of Dq = 2083 cm-1, B = 780 cm-1 and C = 2864 cm-1, with C/B = 3.67. The emission spectrum is composed of the zero phonon line (2Eg → 4A2g transition) with dominating intensity and its vibrational sidebands. We have also calculated Mulliken atomic charges and bond populations for three isostructural perovskites (GdAlO3, LaGaO3 and CaZrO3) to seek correlation between the energy position of the Mn4+2E level and the covalence of Mn4+sbnd O2- chemical bonding.

  20. Ambient stable tetragonal and orthorhombic phases in penta-twinned bipyramidal au microcrystals.

    PubMed

    Mettela, Gangaiah; Bhogra, Meha; Waghmare, Umesh V; Kulkarni, Giridhar U

    2015-03-04

    Face-centered cubic (fcc) lattice is the only known crystal structure of bulk gold. In the present work, we report the presence of body-centered tetragonal (bct) and body-centered orthorhombic (bco) phases in bipyramidal Au microcrystals with penta-twinned tips. These microcrystals have been obtained by thermolysis of (AuCl4)(-) stabilized with tetraoctylammonium bromide (ToABr) in air at about 220 °C for 30 min. Using a laboratory monochromatic X-ray source, the non-fcc phases could be readily detected. The remarkable occurrence of non-fcc phases of Au grown in the temperature window of 200-250 °C results from the geometrically induced strains in the bipyramids. Having derived first-principles theoretical support for the temperature-dependent stability of non-fcc Au structures under stress, we identify its origin in soft modes. Annealing at high temperatures relieves the stress, thus destabilizing the non-fcc phases.

  1. Silver-decorated orthorhombic nanotubes of lithium vanadium oxide: an impeder of bacterial growth and biofilm.

    PubMed

    Diggikar, Rahul S; Patil, Rajendra H; Kale, Sheetal B; Thombre, Dipalee K; Gade, Wasudeo N; Kulkarni, Milind V; Kale, Bharat B

    2013-09-01

    Reoccurrence of infectious diseases and ability of pathogens to resist antibacterial action has raised enormous challenges which may possibly be confronted by nanotechnology routes. In the present study, uniformly embedded silver nanoparticles in orthorhombic nanotubes of lithium vanadium oxide (LiV2O5/Ag) were explored as an impeder of bacterial growth and biofilm. The LiV2O5/Ag nanocomposites have impeded growth of Gram-positive Bacillus subtilis NCIM 2063 and Gram-negative Escherichia coli NCIM 2931 at 60 to 120 μg/mL. It also impeded the biofilm in Pseudomonas aeruginosa NCIM 2948 at 12.5 to 25 μg/mL. Impedance in the growth and biofilm occurs primarily by direct action of the nanocomposites on the cell surfaces of test organisms as revealed by surface perturbation in scanning electron microscopy. As the metabolic growth and biofilm formation phenomena of pathogens play a central role in progression of pathogenesis, LiV2O5/Ag nanocomposite-based approach is likely to curb the menace of reoccurrence of infectious diseases. Thus, LiV2O5/Ag nanocomposites can be viewed as a promising candidate in biofabrication of biomedical materials.

  2. Electronic structure and thermoelectric properties of orthorhombic SrLiAs

    SciTech Connect

    Guo, Li Bin; Wang, Yuan Xu Yan, Yu Li; Yang, Gui; Yang, Jue Ming; Feng, Zhen Zhen

    2014-07-21

    The electronic structure and the transport properties of orthorhombic SrLiAs were investigated using first-principles calculations and the semiclassical Boltzmann theory. It is found that the electrical conductivity along the y-direction is higher than those along other two directions, which is most likely originated from the covalent ladder-like structure formed by the Li and As atoms. Moreover, the transport properties of n-type SrLiAs are better than those of p-type one, due to the large band dispersion along the y-direction near the Fermi level. Further, the value of power factor with respect to relaxation time achieves 9.2 × 10{sup 11} W K{sup −2} m{sup −1} s{sup −1} for n-type SrLiAs along the y-direction at 1000 K with an optimal carrier concentration of 6.5 × 10{sup 20 }cm{sup −3}. The obtained minimum lattice thermal conductivity is comparable to those of other Zintl phase compounds.

  3. An unusual case of pseudo-merohedral twinning in orthorhombic crystals of Dicer.

    PubMed

    MacRae, Ian J; Doudna, Jennifer A

    2007-09-01

    The crystal structure of the enzyme Dicer from Giardia intestinalis was solved to 3.3 A resolution by MAD using crystals belonging to space group P2(1)2(1)2 [Macrae et al. (2006), Science, 311, 195-198]. These crystals were derived from crystals that diffracted X-rays to 3.0 A resolution but were refractory to structure determination because they were twinned. It is shown here that the original Dicer crystals represent an unusual case of perfect pseudo-merohedral twinning of orthorhombic crystals. Before the twinning problem was overcome, it was possible to calculate a low-resolution electron-density map in space group P4(1) that was used to build a partial molecular model. Experimental phases were sufficient to identify heavy-atom sites that indicated space-group inconsistency, leading to identification of the true space group. This information guided the search for different crystallization conditions that yielded untwinned crystals and ultimately a fully interpretable electron-density map.

  4. Silicon Holder For Molecular-Beam Epitaxy

    NASA Technical Reports Server (NTRS)

    Hoenk, Michael E.; Grunthaner, Paula J.; Grunthaner, Frank J.

    1993-01-01

    Simple assembly of silicon wafers holds silicon-based charge-coupled device (CCD) during postprocessing in which silicon deposited by molecular-beam epitaxy. Attains temperatures similar to CCD, so hotspots suppressed. Coefficients of thermal expansion of holder and CCD equal, so thermal stresses caused by differential thermal expansion and contraction do not develop. Holder readily fabricated, by standard silicon processing techniques, to accommodate various CCD geometries. Silicon does not contaminate CCD or molecular-beam-epitaxy vacuum chamber.

  5. Epitaxial Deposition Of Germanium Doped With Gallium

    NASA Technical Reports Server (NTRS)

    Huffman, James E.

    1994-01-01

    Epitaxial layers of germanium doped with gallium made by chemical vapor deposition. Method involves combination of techniques and materials used in chemical vapor deposition with GeH4 or GeCl4 as source of germanium and GaCl3 as source of gallium. Resulting epitaxial layers of germanium doped with gallium expected to be highly pure, with high crystalline quality. High-quality material useful in infrared sensors.

  6. Nanoscale monoclinic domains in epitaxial SrRuO{sub 3} thin films deposited by pulsed laser deposition

    SciTech Connect

    Ghica, C. Negrea, R. F.; Nistor, L. C.; Chirila, C. F.; Pintilie, L.

    2014-07-14

    In this paper, we analyze the structural distortions observed by transmission electron microscopy in thin epitaxial SrRuO{sub 3} layers used as bottom electrodes in multiferroic coatings onto SrTiO{sub 3} substrates for future multiferroic devices. Regardless of the nature and architecture of the multilayer oxides deposited on the top of the SrRuO{sub 3} thin films, selected area electron diffraction patterns systematically revealed the presence of faint diffraction spots appearing in forbidden positions for the SrRuO{sub 3} orthorhombic structure. High-resolution transmission electron microscopy (HRTEM) combined with Geometric Phase Analysis (GPA) evidenced the origin of these forbidden diffraction spots in the presence of structurally disordered nanometric domains in the SrRuO{sub 3} bottom layers, resulting from a strain-driven phase transformation. The local high compressive strain (−4% ÷ −5%) measured by GPA in the HRTEM images induces a local orthorhombic to monoclinic phase transition by a cooperative rotation of the RuO{sub 6} octahedra. A further confirmation of the origin of the forbidden diffraction spots comes from the simulated diffraction patterns obtained from a monoclinic disordered SrRuO{sub 3} structure.

  7. Ultrafast structural dynamics of the orthorhombic distortion in the Fe-pnictide parent compound BaFe2As2.

    PubMed

    Rettig, L; Mariager, S O; Ferrer, A; Grübel, S; Johnson, J A; Rittmann, J; Wolf, T; Johnson, S L; Ingold, G; Beaud, P; Staub, U

    2016-03-01

    Using femtosecond time-resolved hard x-ray diffraction, we investigate the structural dynamics of the orthorhombic distortion in the Fe-pnictide parent compound BaFe2As2. The orthorhombic distortion analyzed by the transient splitting of the (1 0 3) Bragg reflection is suppressed on an initial timescale of 35 ps, which is much slower than the suppression of magnetic and nematic order. This observation demonstrates a transient state with persistent structural distortion and suppressed magnetic/nematic order which are strongly linked in thermal equilibrium. We suggest a way of quantifying the coupling between structural and nematic degrees of freedom based on the dynamics of the respective order parameters.

  8. Influence of downsizing of zeolite crystals on the orthorhombic ↔ monoclinic phase transition in pure silica MFI-type

    NASA Astrophysics Data System (ADS)

    Kabalan, Ihab; Michelin, Laure; Rigolet, Séverinne; Marichal, Claire; Daou, T. Jean; Lebeau, Bénédicte; Paillaud, Jean-Louis

    2016-08-01

    The impact of crystal size on the transition orthorhombic ↔ monoclinic phase in MFI-type purely silica zeolites is investigated between 293 and 473 K using 29Si MAS NMR and powder X-ray diffraction. Three silicalite-1 zeolites are synthesized: a material constituted of micron-sized crystals, pseudospherical nanometer-sized crystals and hierarchical porous zeolites with a mesoporous network created by the use of a gemini-type diquaternary ammonium surfactant giving nanosheet zeolites. Our results show for the first time that the orthorhombic ↔ monoclinic phase transition already known for micron-sized particles also occurs in nanometer-sized zeolite crystals whereas our data suggest that the extreme downsizing of the zeolite crystal to one unit cell in thickness leads to an extinction of the phase transition.

  9. Ultrafast structural dynamics of the orthorhombic distortion in the Fe-pnictide parent compound BaFe2As2

    PubMed Central

    Rettig, L.; Mariager, S. O.; Ferrer, A.; Grübel, S.; Johnson, J. A.; Rittmann, J.; Wolf, T.; Johnson, S. L.; Ingold, G.; Beaud, P.; Staub, U.

    2016-01-01

    Using femtosecond time-resolved hard x-ray diffraction, we investigate the structural dynamics of the orthorhombic distortion in the Fe-pnictide parent compound BaFe2As2. The orthorhombic distortion analyzed by the transient splitting of the (1 0 3) Bragg reflection is suppressed on an initial timescale of 35 ps, which is much slower than the suppression of magnetic and nematic order. This observation demonstrates a transient state with persistent structural distortion and suppressed magnetic/nematic order which are strongly linked in thermal equilibrium. We suggest a way of quantifying the coupling between structural and nematic degrees of freedom based on the dynamics of the respective order parameters. PMID:27158636

  10. External and internal magnetic-field effects on ferroelectricity in orthorhombic rare-earth manganites

    NASA Astrophysics Data System (ADS)

    Kuwahara, H.; Noda, K.; Akaki, M.

    2006-03-01

    We report the dielectric and magnetic properties of the perovskite (Eu,Y)MnO3 crystal without the presence of the 4f magnetic moments of the rare earth ions. The subject compound, (Eu,Y)MnO3, was controlled the average ionic radius of the A site so that it was the same as that of TbMnO3 in which the intriguing magnetoelectric effect has been recently discovered. The (Eu,Y)MnO3 crystal was found to have two distinct ferroelectric phases with polarization along the a (Pa, T<=23K) and c (Pc, 23K<=T<=25K) axes in the orthorhombic Pbnm setting in a zero magnetic field. In addition, we have demonstrated a magnetic-field-induced switching between these ferroelectric phases: Pa changed to Pc by the application of magnetic fields parallel to the a axis (Ha). In analogy to the case of Pc in TbMnO3, this result is possibly interpreted as follows. In the case of (Eu,Y)MnO3, Mn 3d spins rotate in the ab plane and Pa would emerge in a zero field. In the Ha, the field will force the spins to rotate in the bc plane, in which Pc would be stabilized. Magnetization measurements supported this interpretation: We confirmed the change of the spin rotation axis of the helix from the c axis to the a axis induced by application of the Ha because there is no 4f moments acting as an internal magnetic field and interacting with the 3d spins. Results obtained with other rare-earth manganites such as (Gd,Tb)MnO3 and (Eu,Ho)MnO3 will be presented.

  11. Microstructure and properties of a titanium alloy-orthorhombic titanium aluminide layered composite

    NASA Astrophysics Data System (ADS)

    Galeev, R. M.; Valiakhmetov, O. R.; Safiullin, R. V.; Imaev, V. M.; Imaev, R. M.

    2009-03-01

    The microstructure and tensile properties of a layered composite material fabricated by solid-state bonding of its components using pressure welding are studied at room and elevated temperatures. The components are made of a high-temperature VT25U titanium alloy and an intermetallic alloy ( O alloy) based on orthorhombic titanium aluminide of the composition Ti-23Al-22.7Nb-1.1V-0.6Zr-0.2Si-0.3C (at %). The study of the microstructure and chemical composition of the composite by scanning electron microscopy and energy dispersive X-ray analysis demonstrates that this method of producing a layered composite provides high-quality poreless bonding of materials of different types. The solid-state bonding zone has an intermediate chemical composition. Mechanical tests demonstrate that the room-temperature strength of the composite is comparable with that of the O alloy and is higher than that of the titanium alloy; as the fraction of the titanium alloy in the composite decreases, this strength increases. The relative elongation of the layered composite is found to be higher than that of the O alloy and lower than that of the titanium alloy. In the temperature range 500-700°C, the strength of the composite material is 25% higher than that of the titanium alloy, and its plasticity is lower than that of the titanium alloy. Our method is shown to be promising for producing layered composite materials that have high mechanical properties over a wide temperature range.

  12. Structural and ferromagnetic properties of an orthorhombic phase of MnBi stabilized with Rh additions

    SciTech Connect

    Taufour, Valentin; Thimmaiah, Srinivasa; March, Stephen; Saunders, Scott; Sun, Kewei; Lamichhane, Tej Nath; Kramer, Matthew J.; Bud’ko, Sergey L.; Canfield, Paul C.

    2015-07-28

    The article addresses the possibility of alloy elements in MnBi which may modify the thermodynamic stability of the NiAs-type structure without significantly degrading the magnetic properties. The addition of small amounts of Rh and Mn provides an improvement in the thermal stability with some degradation of the magnetic properties. The small amounts of Rh and Mn additions in MnBi stabilize an orthorhombic phase whose structural and magnetic properties are closely related to the ones of the previously reported high-temperature phase of MnBi (HT MnBi). The properties of the HT MnBi, which is stable between 613 and 719 K, have not been studied in detail because of its transformation to the stable low-temperature MnBi (LT MnBi), making measurements near and below its Curie temperature difficult. The Rh-stabilized MnBi with chemical formula Mn1.0625–xRhxBi [x=0.02(1)] adopts a new superstructure of the NiAs/Ni2In structure family. It is ferromagnetic below a Curie temperature of 416 K. The critical exponents of the ferromagnetic transition are not of the mean-field type but are closer to those associated with the Ising model in three dimensions. The magnetic anisotropy is uniaxial; the anisotropy energy is rather large, and it does not increase when raising the temperature, contrary to what happens in LT MnBi. The saturation magnetization is approximately 3μB/f.u. at low temperatures. Thus, while this exact composition may not be application ready, it does show that alloying is a viable route to modifying the stability of this class of rare-earth-free magnet alloys.

  13. Crystallization kinetics of orthorhombic paracetamol from supercooled melts studied by non-isothermal DSC.

    PubMed

    Nikolakakis, Ioannis; Kachrimanis, Kyriakos

    2017-02-01

    A simple and highly reproducible procedure was established for the study of orthorhombic paracetamol crystallization kinetics, comprising melting, quench-cooling of the melt and scanning the formed glass by DSC at different heating rates. Results were analyzed on the basis of the mean as well as local values of the Avrami exponent, n, the energy of activation, as well as the Šesták-Berggren two-parameter autocatalytic kinetic model. The mean value of the Avrami kinetic exponent, n, ranged between 3 and 5, indicating deviation from the nucleation and growth mechanism underlying the Johnson-Mehl, Avrami-Kolmogorov (JMAK) model. To verify the extent of the deviation, local values of the Avrami exponent as a function of the volume fraction transformed were calculated. Inspection of the local exponent values indicates that the crystallization mechanism changes over time, possibly reflecting the uncertainty of crystallization onset, instability of nucleation due to an autocatalytic effect of the crystalline phase, and growth anisotropy due to impingement of spherulites in the last stages of crystallization. The apparent energy of activation, Ea, has a rather low mean value, close to 81 kJ/mol, which is in agreement with the observed instability of glassy-state paracetamol. Isoconversional methods revealed that Ea tends to decrease with the volume fraction transformed, possibly because of the different energy demands of nucleation and growth. The exponents of the Šesták-Berggren two-parameter model showed that the crystallized fraction influences the process, confirming the complexity of the crystallization mechanism.

  14. Structural and ferromagnetic properties of an orthorhombic phase of MnBi stabilized with Rh additions

    DOE PAGES

    Taufour, Valentin; Thimmaiah, Srinivasa; March, Stephen; ...

    2015-07-28

    The article addresses the possibility of alloy elements in MnBi which may modify the thermodynamic stability of the NiAs-type structure without significantly degrading the magnetic properties. The addition of small amounts of Rh and Mn provides an improvement in the thermal stability with some degradation of the magnetic properties. The small amounts of Rh and Mn additions in MnBi stabilize an orthorhombic phase whose structural and magnetic properties are closely related to the ones of the previously reported high-temperature phase of MnBi (HT MnBi). The properties of the HT MnBi, which is stable between 613 and 719 K, have notmore » been studied in detail because of its transformation to the stable low-temperature MnBi (LT MnBi), making measurements near and below its Curie temperature difficult. The Rh-stabilized MnBi with chemical formula Mn1.0625–xRhxBi [x=0.02(1)] adopts a new superstructure of the NiAs/Ni2In structure family. It is ferromagnetic below a Curie temperature of 416 K. The critical exponents of the ferromagnetic transition are not of the mean-field type but are closer to those associated with the Ising model in three dimensions. The magnetic anisotropy is uniaxial; the anisotropy energy is rather large, and it does not increase when raising the temperature, contrary to what happens in LT MnBi. The saturation magnetization is approximately 3μB/f.u. at low temperatures. Thus, while this exact composition may not be application ready, it does show that alloying is a viable route to modifying the stability of this class of rare-earth-free magnet alloys.« less

  15. New structure of high-pressure body-centered orthorhombic Fe2SiO4

    DOE PAGES

    Yamanaka, Takamitsu; Kyono, Atsushi; Nakamoto, Yuki; ...

    2015-08-01

    Here, a structural change in Fe2SiO4 spinel and the structure of a new high pressure phase are determined by Rietveld 26 profile fitting of x-ray diffraction data up to 64 GPa at ambient temperature. The compression curve of the spinel is discontinuous at approximately 20 GPa. Fe Kβ x-ray emission measurements at high pressure show that the transition from a high spin (HS) to an intermediate spin (IS) state begins at 17 GPa in the spinel phase. The IS electronic state is gradually enhanced with pressure, which results in an isostructural phase transition. A transition from the cubic spinel structure to a body centered orthorhombic phase (I-Fe2SiO4) with space group Imma and Z=4 was observed at approximately 34 GPa. The structure of I-Fe2SiO4 has two crystallographically distinct FeO6 octahedra, which are arranged in layers parallel to (101) and (011) and are very similar to the layers of FeO6 octahedra that constitute the spinel structure. Silicon also exists in six-fold coordination in I-Fe2SiO4. The transformation to the new high-pressure phase is reversible under decompression at ambient temperature. A Martensitic transformation of each slab of the spinel structure with translation vector [more » $$\\vec{1/8}$$ $$\\vec{1/8}$$ $$\\vec{1/8}$$] generates the I-Fe2SiO4 structure. Laser heating of I-Fe2SiO4 at 1500 K results in a decomposition of the material to rhombohedral FeO and SiO2 stishovite.« less

  16. High-pressure orthorhombic ferromagnesite as a potential deep-mantle carbon carrier

    SciTech Connect

    Liu, Jin; Lin, Jung -Fu; Prakapenka, Vitali B.

    2015-01-06

    In this study, knowledge of the physical and chemical properties of candidate deep-carbon carriers such as ferromagnesite [(Mg,Fe)CO3] at high pressure and temperature of the deep mantle is necessary for our understanding of deep-carbon storage as well as the global carbon cycle of the planet. Previous studies have reported very different scenarios for the (Mg,Fe)CO3 system at deep-mantle conditions including the chemical dissociation to (Mg,Fe)O+CO2, the occurrence of the tetrahedrally-coordinated carbonates based on CO4 structural units, and various high-pressure phase transitions. Here we have studied the phase stability and compressional behavior of (Mg,Fe)CO3 carbonates up to relevant lower-mantle conditions of approximately 120 GPa and 2400 K. Our experimental results show that the rhombohedral siderite (Phase I) transforms to an orthorhombic phase (Phase II with Pmm2 space group) at approximately 50 GPa and 1400 K. The structural transition is likely driven by the spin transition of iron accompanied by a volume collapse in the Fe-rich (Mg,Fe)CO3 phases; the spin transition stabilizes the high-pressure phase II at much lower pressure conditions than its Mg-rich counterpart. It is conceivable that the low-spin ferromagnesite phase II becomes a major deep-carbon carrier at the deeper parts of the lower mantle below 1900 km in depth.

  17. One-step hydrothermal synthesis, characterization and magnetic properties of orthorhombic PrCrO{sub 3} cubic particles

    SciTech Connect

    Zhang, Youjin Yao, Chengpeng; Fan, Yun; Zhou, Maozhong

    2014-11-15

    Highlights: • Orthorhombic PrCrO{sub 3} cubic particles were prepared by a simple and facile one-step hydrothermal method. • The possible formation mechanism of PrCrO{sub 3} cubic particles was proposed. • The as-synthesized PrCrO{sub 3} exhibited behaviors of magnetic transition and negative magnetization. - Abstract: Orthorhombic PrCrO{sub 3} cubic particles were synthesized by a simple and facile one-step hydrothermal method of processing temperature 280 °C for 7 days. The products prepared in this paper have been characterized by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR) and field-emission scanning electron microscopy (FESEM). The magnetic properties of the final sample are also studied. The XRD pattern shows the pure orthorhombic phase for PrCrO{sub 3} particles, the XPS and FTIR results further demonstrate the purity and composition of the product. FESEM images show cubic morphology for the PrCrO{sub 3} particles. The possible growth mechanism for PrCrO{sub 3} cubic particles is proposed. Through the investigation of magnetic properties, it can be seen that the orthorhombic PrCrO{sub 3} cubic particles exhibit behaviors of magnetic transition and negative magnetization. The Néel temperature is about 232 K and the magnetic hysteresis loop under 4 K shows that the coercivity (H{sub C}) and remanence (M{sub r}) is about 1728 Oe and 4.88 emu/g, respectively.

  18. Effects of contamination on selective epitaxial growth

    NASA Astrophysics Data System (ADS)

    MacDonald, Brian J.; Paton, Eric; Adem, Ercan; En, Bill

    2004-06-01

    As MOSFET dimensions scale down in size, it has become increasingly difficult to maintain high drive current while suppressing the off-state leakage current. One method of avoiding short-channel effects is to scale the source/drain (S/D) junction depths proportionally with the gate length. Unfortunately, this increases the S/D resistance, which slows the circuit. To keep the S/D junction shallow without affecting the S/D resistance, a raised S/D (RSD) structure is required. Integrating RSD can be difficult. Selective epitaxial growth (SEG) is the process used to incorporate RSD. This process requires a relatively clean surface to initiate the growth. Insertion of SEG earlier in the process flow facilitates selective epitaxial growth. Insertion of SEG later in the process flow results in higher levels of contamination at the interface of the Si substrate and the RSD structure. In this paper, we identify some mechanisms that determine the quality of the selective epitaxial film. Results indicate that Si defects are not a dominant mechanism in SEG film quality. Instead, results suggest that higher levels of contamination increased the surface roughness of the epitaxial film. PMOS regions were found to have higher levels of contamination and rougher epitaxial films than NMOS regions. Hydrogen bake as high as 900 °C was required to lower the surface contamination and provide excellent epitaxial morphology. Unfortunately, this high temperature causes enhanced dopant diffusion and deactivation of the device. Previous work [H. van Meer, K. De Meyer, Symposium on VLSI Technology Digest of Technical Papers, 2002, p. 170.] identified an alternative integration that provides excellent quality selective epitaxy, without dopant diffusion and deactivation.

  19. First-principles study of structural and elastic properties of monoclinic and orthorhombic BiMnO3.

    PubMed

    Mei, Zhi-Gang; Shang, Shun-Li; Wang, Yi; Liu, Zi-Kui

    2010-07-28

    The structural and elastic properties of BiMnO(3) with monoclinic (C 2/c) and orthorhombic (Pnma) ferromagnetic (FM) structures have been studied by first-principles calculations within LDA + U and GGA + U approaches. The equilibrium volumes and bulk moduli of BiMnO(3) phases are evaluated by equation of state (EOS) fittings, and the bulk properties predicted by LDA + U calculations are in better agreement with experiment. The orthorhombic phase is found to be more stable than the monoclinic phase at ambient pressure. A monoclinic to monoclinic phase transition is predicted to occur at a pressure of about 10 GPa, which is ascribed to magnetism versus volume instability of monoclinic BiMnO(3). The single-crystal elastic stiffness constants c(ij)s of the monoclinic and orthorhombic phases are investigated using the stress-strain method. The c(46) of the monoclinic phase is predicted to be negative. In addition, the polycrystalline elastic properties including bulk modulus, shear modulus, Young's modulus, bulk modulus-shear modulus ratio, Poisson's ratio, and elastic anisotropy ratio are determined based on the calculated elastic constants. The presently predicted phase transition and elastic properties open new directions for investigation of the phase transitions in BiMnO(3), and provide helpful guidance for the future elastic constant measurements.

  20. Effect of orthorhombic-tetragonal phase transition on structure and piezoelectric properties of KNN-based lead-free ceramics.

    PubMed

    Zhang, Yang; Li, Lingyu; Shen, Bo; Zhai, Jiwei

    2015-05-07

    (1 - x)(K0.5Na0.5)0.95Li0.05Nb0.93Sb0.07O3-xSrZrO3 ((1 - x)KNLNS-xSZ) lead free piezoelectric ceramics have been prepared by the conventional solid state reaction method, via adjusting the orthorhombic-tetragonal phase transition temperature to near room temperature with doping SrZrO3, and the effects of SrZrO3 content on polymorphic phase transition have been investigated. These results show that the phase structure of the ceramics was changed from orthorhombic to tetragonal at x ≥ 0.02 mol, and the orthorhombic-tetragonal phase transition temperature was modified to around room temperature with increasing SrZrO3. Remarkable piezoelectric and ferroelectric properties has been obtained in (1 - x)KNLNS-xSZ system with x = 0.02, which showed a piezoelectric parameter of d33 = 256 pC N(-1), Curie temperature Tc = 270 °C, strain levels of 0.16% at 50 kV cm(-1), remnant polarization Pr = 24.9 μC cm(-2) and coercive field Ec = 10.6 kV cm(-1).

  1. Photo-enhanced salt-water splitting using orthorhombic Ag8SnS6 photoelectrodes in photoelectrochemical cells

    NASA Astrophysics Data System (ADS)

    Cheng, Kong-Wei; Tsai, Wei-Tseng; Wu, Yu-Hsuan

    2016-06-01

    Orthorhombic Ag8SnS6 photoelectrodes are prepared on various substrates via reactive sulfurization using the radio-frequency magnetron sputtering of silver-tin metal precursors. Evaluations of the photoelectrochemical performances of Ag8SnS6 photoelectrodes with various levels of silver content are carried out in various aqueous solutions. X-ray diffraction patterns and Hall measurements of samples after a three-stage sulfurization process show that all samples are the pure orthorhombic Ag8SnS6 phase with n-type conductivity. The energy band gaps, carrier concentrations, and mobilities of samples on glass substrates are 1.31-1.33 eV, 7.07 × 1011-8.52 × 1012 cm-3, and 74.9-368 cm2 V-1 s-1, respectively, depending on the [Ag]/[Ag+Sn] molar ratio in samples. The highest photoelectrochemical performances of orthorhombic Ag8SnS6 photoelectrodes in aqueous 0.35 M Na2S + 0.25 M K2SO3 and 0.5 M NaCl solutions are respectively 2.09 and 2.5 mA cm-2 at an applied voltages of 0.9 and 1.23 V vs. a reversible hydrogen electrode under light irradiation with a light intensity of 100 mW cm-2 from a 300-W Xe lamp.

  2. Twinning induced by the rhombohedral to orthorhombic phase transition in lanthanum gallate (LaGaO3)

    NASA Astrophysics Data System (ADS)

    Wang, W. L.; Lu, H. Y.

    2006-10-01

    Phase-transformation-induced twins in pressureless-sintered lanthanum gallate (LaGaO3) ceramics have been analysed using the transmission electron microscopy (TEM). Twins are induced by solid state phase transformation upon cooling from the rhombohedral (r, Rbar{3}c) to orthorhombic ( o, Pnma) symmetry at ˜145°C. Three types of transformation twins {101} o , {121} o , and {123} o were found in grains containing multiple domains that represent orientation variants. Three orthorhombic orientation variants were distinguished from the transformation domains converged into a triple junction. These twins are the reflection type as confirmed by tilting experiment in the microscope. Although not related by group-subgroup relation, the transformation twins generated by phase transition from rhombohedral to orthorhombic are consistent with those derived from taking cubic Pm {bar {3}}m aristotype of the lowest common supergroup symmetry as an intermediate metastable structure. The r→ o phase transition of first order in nature may have occurred by a diffusionless, martensitic-type or discontinuous nucleation and growth mechanism.

  3. Bounds and self-consistent estimates for elastic constants of granular polycrystals composed of orthorhombics or crystal with higher symmetries

    SciTech Connect

    Berryman, J. G.

    2011-02-01

    Methods for computing Hashin-Shtrikman bounds and related self-consistent estimates of elastic constants for polycrystals composed of crystals having orthorhombic symmetry have been known for about three decades. However, these methods are underutilized, perhaps because of some perceived difficulties with implementing the necessary computational procedures. Several simplifications of these techniques are introduced, thereby reducing the overall computational burden, as well as the complications inherent in mapping out the Hashin-Shtrikman bounding curves. The self-consistent estimates of the effective elastic constants are very robust, involving a quickly converging iteration procedure. Once these self-consistent values are known, they may then be used to speed up the computations of the Hashin-Shtrikman bounds themselves. It is shown furthermore that the resulting orthorhombic polycrystal code can be used as well to compute both bounds and self-consistent estimates for polycrystals of higher-symmetry tetragonal, hexagonal, and cubic (but not trigonal) materials. The self-consistent results found this way are shown to be the same as those obtained using the earlier methods, specifically those methods designed specially for each individual symmetry type. But the Hashin-Shtrikman bounds found using the orthorhombic code are either the same or (more typically) tighter than those found previously for these special cases (i.e., tetragonal, hexagonal, and cubic). The improvement in the Hashin-Shtrikman bounds is presumably due to the additional degrees of freedom introduced into the available search space.

  4. An orthorhombic representation of a heterogeneous medium for the finite-difference modelling of seismic wave propagation

    NASA Astrophysics Data System (ADS)

    Kristek, Jozef; Moczo, Peter; Chaljub, Emmanuel; Kristekova, Miriam

    2017-02-01

    The possibility of applying one explicit finite-difference (FD) scheme to all interior grid points (points not lying on a grid border) no matter what their positions are with respect to the material interface is one of the key factors of the computational efficiency of the FD modelling. Smooth or discontinuous heterogeneity of the medium is accounted for only by values of the effective grid moduli and densities. Accuracy of modelling thus very much depends on how these effective grid parameters are evaluated. We present an orthorhombic representation of a heterogeneous medium for the FD modelling. We numerically demonstrate its superior accuracy. Compared to the harmonic-averaging representation the orthorhombic representation is more accurate mainly in the case of strong surface waves that are especially important in local surface sedimentary basins. The orthorhombic representation is applicable to modelling seismic wave propagation and earthquake motion in isotropic models with material interfaces and smooth heterogeneities using velocity-stress, displacement-stress and displacement FD schemes on staggered, partly staggered, Lebedev and collocated grids.

  5. Engineering epitaxial graphene with oxygen

    NASA Astrophysics Data System (ADS)

    Kimouche, Amina; Martin, Sylvain; Winkelmann, Clemens; Fruchart, Olivier; Courtois, Hervé; Coraux, Johann; Hybrid system at low dimension Team

    2013-03-01

    Almost free-standing graphene can be obtained on metals by decoupling graphene from its substrate, for instance by intercalation of atoms beneath graphene, as it was shown with oxygen atoms. We show that the interaction of oxygen with epitaxial graphene on iridium leads to the formation of an ultrathin crystalline oxide extending between graphene and the metallic substrate via the graphene wrinkles. Graphene studied in this work was prepared under ultra-high vacuum by CVD. The samples were studied by combining scanning probe microscopy (STM, AFM) and spatially resolved spectroscopy (Raman, STS). The ultrathin oxide forms a decoupling barrier layer between graphene and Ir, yielding truly free-standing graphene whose hybridization and charge transfers with the substrate have been quenched. Our work presents novel types of graphene-based nanostructures, and opens the route to the transfer-free preparation of graphene directly onto an insulating support contacted to the metallic substrate which could serve as a gate electrode. Work supported by the EU-NMP GRENADA project

  6. Island morphologies in epitaxial growth.

    NASA Astrophysics Data System (ADS)

    Hessinger, Uwe; Leskovar, M.; Rumaner, Lee; Ohuchi, Fumio; Olmstead, Marjorie A.; Ueno, Keiji; Koma, Atsushi

    1996-03-01

    Growth of epitaxial films commonly occurs through the coalescence of individual islands. The morphology of islands has therefore a key importance for the film qualities desired. A uniform layer-by-layer growth of the film is achieved when islands in the first layer coalesce to form a uniform layer before a second layer nucleates; a non-uniform multi-layer growth results from multiple layers successively nucleating on top of each other before the first layer coalesces. We developed a kinetic model based on an analytic solution of the diffusion equation between nucleation events to calculate the evolving island morphology during growth. The morphologies depend on deposition rate, substrate temperature, and activation energies for surface diffusion on the substrate and deposited material. By applying this theory to atomic force microscopy data of GaSe multi-layer islands, we extract a value for the activation energy for Ga diffusion across steps of GaSe. Supported by NSF Grant No. ECS-9209652, DOE Grant No. DE-FG06-94ER45516, and the Japanese New Energy Development Organization.

  7. Determination of crystallographic orientation of lead-free piezoelectric (K,Na)NbO{sub 3} epitaxial thin films grown on SrTiO{sub 3} (100) surfaces

    SciTech Connect

    Yu, Qi; Zhu, Fang-Yuan; Cheng, Li-Qian; Wang, Ke; Li, Jing-Feng

    2014-03-10

    Crystallographic structure of sol-gel-processed lead-free (K,Na)NbO{sub 3} (KNN) epitaxial films on [100]-cut SrTiO{sub 3} single-crystalline substrates was investigated for a deeper understanding of its piezoelectric response. Lattice parameter measurement by high-resolution X-ray diffraction and transmission electron microscopy revealed that the orthorhombic KNN films on SrTiO{sub 3} (100) surfaces are [010] oriented (b-axis-oriented) rather than commonly identified c-axis orientation. Based on the crystallographic orientation and corresponding ferroelectric domain structure investigated by piezoresponse force microscopy, the superior piezoelectric property along b-axis of epitaxial KNN films than other orientations can be explained.

  8. Tunable bands in biased multilayer epitaxial graphene.

    PubMed

    Williams, Michael D; Samarakoon, Duminda K; Hess, Dennis W; Wang, Xiao-Qian

    2012-04-28

    We have studied the electronic characteristics of multilayer epitaxial graphene under a perpendicularly applied electric bias. Ultraviolet photoemission spectroscopy measurements reveal that there is notable variation of the electronic density-of-states in valence bands near the Fermi level. Evolution of the electronic structure of graphite and rotational-stacked multilayer epitaxial graphene as a function of the applied electric bias is investigated using first-principles density-functional theory including interlayer van der Waals interactions. The experimental and theoretical results demonstrate that the tailoring of electronic band structure correlates with the interlayer coupling tuned by the applied bias. The implications of controllable electronic structure of rotationally fault-stacked epitaxial graphene grown on the C-face of SiC for future device applications are discussed.

  9. Understanding the Rocksalt-to-Wurtzite phase transformation through microstructural analysis of (Al,Sc)N epitaxial thin films

    NASA Astrophysics Data System (ADS)

    Saha, Bivas; Saber, Sammy; Stach, Eric A.; Kvam, Eric P.; Sands, Timothy D.

    2016-10-01

    Rocksalt-to-wurtzite structural phase transitions in semiconducting materials (such as III-V nitrides, ZnO, CdSe, and others) have been studied for several decades. Almost all experimental works related to this phase transition involve diamond anvil cells to apply hydrostatic pressure, and as a result, direct observation of the microstructural transformation during the phase transition has not been possible. In this article, we have addressed and uncovered the intimate microstructural details and epitaxial relationships between phases by capturing what is essentially a thin-film snapshot of the transformation after growth of AlxSc1-xN films with a composition chosen to be close to the equilibrium phase boundary between wurtzite and rocksalt. The results support the hypothesis that the transformation is triggered by defects at rs- {0 1 ¯ 1 } growth fronts that offer a nearly invariant plane with respect to the parallel w- {2 1 ¯ 1 ¯0 } planes. The intermediate crystal structures and their epitaxial relationships are consistent with theoretical models that predict a transformation pathway involving homogeneous orthorhombic shear strain.

  10. Growth and Structural Study of Epitaxial NaMnF3 Thin Films on SrTiO3

    NASA Astrophysics Data System (ADS)

    Kc, Amit; Johnson, Trent; Borisov, Pavel; Lederman, David

    2015-03-01

    Perovskite fluorides (ABF3) exhibit many interesting phenomena, e.g. dipolar and magnetic long-range order superconductivity, as well as magnetoelectric coupling. Recently, G. C. Garcia-Castro et al. predicted that orthorhombically distorted Pnma NaMnF3 perovskite should have a particularly soft ferroelectric mode, and is expected to demonstrate ferroelectric order regardless of elastic strain, despite the competing antiferrodistortive instability. Thus, in combination with weak ferromagnetic order, this material is expected to be multiferroic1. Here, we report the growth of epitaxial NaMnF3 thin films on SrTiO3(100) single crystal substrates via Molecular Beam Epitaxy (MBE). Structural qualities of the films were studied as a function of the substrate temperature and film thickness by the techniques of X-ray diffraction (XRD), in-situ reflection high-energy electron diffraction (RHEED), and atomic force microscopy (AFM). The best films were smooth single phase NaMnF3, grown with four in-plane and two out-of-plane twin domains.

  11. Epitaxial strain effect on the Jeff = 1/2 moment orientation in Sr2IrO4 thin films

    NASA Astrophysics Data System (ADS)

    Miao, Ludi; Xu, Hong; Mao, Z. Q.

    2014-01-01

    We have grown Sr2IrO4 (SIO) epitaxial thin films on SrTiO3 (STO) and NdGaO3 (NGO) substrates by a pulsed laser deposition method and characterized their structures and magnetic properties. We find that SIO films grown on STO substrates display tetragonal structure with a tensile strain of 0.13%, while SIO films grown on NGO substrates exhibit slightly orthorhombic structure with anisotropic biaxial tensile strains of 0.39% and 0.51% along the in-plane crystallographic axes. Although both films display insulating properties as bulk SIO does, their magnetic properties are distinct from that of bulk SIO. The ferromagnetic (FM) component of the Jeff = 1/2 canted antiferromagnetic order, which emerges below ˜240 K in bulk SIO, is significantly weakened in both films, with a greater weakening appearing in the SIO/NGO film. From structural and magnetoresistance anisotropy analyses for both films, we reveal that the weak FM component in SIO films is dependent on the epitaxial strain. The greater tensile strain leads to a smaller octahedral rotation: The rotation angle is ˜9.7(1)° for the SIO/NGO film and ˜10.7(2)° for the SIO/STO film. These findings indicate that the Jeff = 1/2 moment orientation in SIO follows the IrO6 octahedral rotation due to strong spin-orbit interaction.

  12. Anisotropic-strain-relaxation-induced crosshatch morphology in epitaxial SrTiO3/NdGaO3 thin films

    NASA Astrophysics Data System (ADS)

    Tan, X. L.; Chen, F.; Chen, P. F.; Xu, H. R.; Chen, B. B.; Jin, F.; Gao, G. Y.; Wu, W. B.

    2014-10-01

    We investigate the strain relaxation and surface morphology of epitaxial SrTiO3 (STO) films grown on (001)O and (110)O planes of orthorhombic NdGaO3 (NGO), and (001) plane of cubic (LaAlO3)0.3(Sr2AlTaO6)0.7 (LSAT) substrates. Although the average lattice mismatches are similar, strikingly regular crosshatched surface patterns can be found on STO/NGO(001)O[(110)O] films, contrary to the uniform surface of STO/LSAT(001). Based on the orientation and thickness dependent patterns and high-resolution x-ray diffractions, we ascribe the crosshatch morphology to the anisotropic strain relaxation with possibly the 60° misfit dislocation formation and lateral surface step flow in STO/NGO films, while an isotropic strain relaxation in STO/LSAT. Further, we show that the crosshatched STO/NGO(110)O surface could be utilized as a template to modify the magnetotransport properties of epitaxial La0.6Ca0.4MnO3 films. This study highlights the crucial role of symmetry mismatch in determining the surface morphology of the perovskite oxide films, in addition to their epitaxial strain states, and offers a different route for designing and fabricating functional perovskite-oxide devices.

  13. Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: A first principles insight

    NASA Astrophysics Data System (ADS)

    Clima, S.; Wouters, D. J.; Adelmann, C.; Schenk, T.; Schroeder, U.; Jurczak, M.; Pourtois, G.

    2014-03-01

    The origin of the ferroelectric polarization switching in orthorhombic HfO2 has been investigated by first principles calculations. The phenomenon can be regarded as being the coordinated displacement of four O ions in the orthorhombic unit cell, which can lead to a saturated polarization as high as 53 μC/cm2. We show the correlation between the computed polarization reversal barrier and the experimental coercive fields.

  14. Crystal growth of calcium phosphates - epitaxial considerations

    NASA Astrophysics Data System (ADS)

    Koutsoukos, P. G.; Nancollas, G. H.

    1981-05-01

    The growth of one crystalline phase on the surface of another that offers a good crystal lattice match, may be important in environmental, physiological and pathological mineralization processes. The epitaxial relationships and kinetics of growth of hydroxyapatite on crystals of dicalcium phosphate dihydrate, calcium fluoride and calcite have been studied at sustained low supersaturation with respect to hydroxyapatite. At the very low supersaturations, the crystallization of hydroxyapatite takes place without the formation of precursor phases. The experimental results are in agreement with theoretical predictions for epitaxial growth, while the kinetics of hydroxyapatite crystallization on the foreign substrates is the same as that for the growth of hydroxyapatite on synthetic hydroxyapatite crystals.

  15. Chemical vapor deposition of epitaxial silicon

    DOEpatents

    Berkman, Samuel

    1984-01-01

    A single chamber continuous chemical vapor deposition (CVD) reactor is described for depositing continuously on flat substrates, for example, epitaxial layers of semiconductor materials. The single chamber reactor is formed into three separate zones by baffles or tubes carrying chemical source material and a carrier gas in one gas stream and hydrogen gas in the other stream without interaction while the wafers are heated to deposition temperature. Diffusion of the two gas streams on heated wafers effects the epitaxial deposition in the intermediate zone and the wafers are cooled in the final zone by coolant gases. A CVD reactor for batch processing is also described embodying the deposition principles of the continuous reactor.

  16. Morphology and Electrical Characterization of Reduced Epitaxial Graphene Oxide

    NASA Astrophysics Data System (ADS)

    Hu, Yike; Wu, Xiaosong; Sprinkle, Michael; Madiomanana, Nerasoa; Ruan, Ming; Berger, Claire; de Heer, Walter

    2009-03-01

    We present results for on-chip oxidation of epitaxial graphene and sequential reduction of the insulating graphene oxide layers. In our previous work , we have used the Hummer's method to oxidize epitaxial graphene and used electron beam exposure and heat treatment to reduce the epitaxial graphene oxide (EGO) band gap by changing the degree of oxidation. Here we further explore various oxidation and reduction methods on epitaxial graphene. EGO is characterized by atomic force microscopy, low-energy electron diffraction, ellipsometry, and Raman Spectrometry. Mobility measurements of patterned structures are presented where epitaxial graphene layers pads are seamlessly connected to EGO ribbons.

  17. An orthorhombic crystal form of cyclohexaicosaose, CA26.32.59 H(2)O: comparison with the triclinic form.

    PubMed

    Nimz, O; Gessler, K; Usón, I; Saenger, W

    2001-11-08

    Cycloamylose containing 26 glucose residues (cyclohexaicosaose, CA26) crystallized from water and 30% (v/v) polyethyleneglycol 400 in the orthorhombic space group P2(1)2(1)2(1) in the highly hydrated form CA26.32.59 H(2)O. X-ray analysis of the crystals at 0.85 A resolution shows that the macrocycle of CA26 is folded into two short left-handed V-amylose helices in antiparallel arrangement and related by a twofold rotational pseudosymmetry as reported recently for the (CA26)(2).76.75 H(2)O triclinic crystal form [Gessler, K. et al. Proc. Natl. Acad. Sci. USA 1999, 96, 4246-4251]. In the orthorhombic crystal form, CA26 molecules are packed in motifs reminiscent of V-amylose in hydrated and anhydrous forms. The intramolecular interface between the V-helices in CA26 is dictated by formation of an extended network of interhelical C-H...O hydrogen bonds; a comparable molecular arrangement is also evident for the intermolecular packing, suggesting that it is a characteristic feature of V-amylose interaction. The hydrophobic channels of CA26 are filled with disordered water molecules arranged in chains and held in position by multiple C-H...O hydrogen bonds. In the orthorhombic and triclinic crystal forms, the structures of CA26 molecules are equivalent but the positions of the individual water molecules are different, suggesting that the patterns of water chains are perturbed even by small structural changes associated with differences in packing arrangements in the two crystal lattices rather than with differences in the CA26 geometry.

  18. Epitaxial growth of three dimensionally structured III-V photonic crystal via hydride vapor phase epitaxy

    SciTech Connect

    Zheng, Qiye; Kim, Honggyu; Zhang, Runyu; Zuo, Jianmin; Braun, Paul V.; Sardela, Mauro; Balaji, Manavaimaran; Lourdudoss, Sebastian; Sun, Yan-Ting

    2015-12-14

    Three-dimensional (3D) photonic crystals are one class of materials where epitaxy, and the resultant attractive electronic properties, would enable new functionalities for optoelectronic devices. Here we utilize self-assembled colloidal templates to fabricate epitaxially grown single crystal 3D mesostructured Ga{sub x}In{sub 1−x}P (GaInP) semiconductor photonic crystals using hydride vapor phase epitaxy (HVPE). The epitaxial relationship between the 3D GaInP and the substrate is preserved during the growth through the complex geometry of the template as confirmed by X-ray diffraction (XRD) and high resolution transmission electron microscopy. XRD reciprocal space mapping of the 3D epitaxial layer further demonstrates the film to be nearly fully relaxed with a negligible strain gradient. Fourier transform infrared spectroscopy reflection measurement indicates the optical properties of the photonic crystal which agree with finite difference time domain simulations. This work extends the scope of the very few known methods for the fabrication of epitaxial III-V 3D mesostructured materials to the well-developed HVPE technique.

  19. Orthorhombic polar Nd-doped BiFeO3 thin film on MgO substrate.

    PubMed

    Leontyev, I N; Yuzyuk, Yu I; Janolin, P-E; El-Marssi, M; Chernyshov, D; Dmitriev, V; Golovko, Yu I; Mukhortov, V M; Dkhil, B

    2011-08-24

    A Nd-doped BiFeO(3) thin film deposited on MgO substrate was studied by synchrotron diffraction. The ferroelectric nature of the film is proven by in-plane remanent polarization measurement. The highest possible symmetry of the film is determined to be orthorhombic, within the Fm2m space group. Such a structure is rotated by 45° with respect to the substrate and is consistent with tilts of oxygen octahedra doubling the unit cell. This polar structure presents a rather unusual strain-accommodation mechanism.

  20. Effect of hydrogen on the structure of quenched orthorhombic titanium aluminide-based alloy and phase transformations during subsequent heating

    NASA Astrophysics Data System (ADS)

    Khadzhieva, O. G.; Illarionov, A. G.; Popov, A. A.; Grib, S. V.

    2013-06-01

    The effect of hydrogen on structure formation and changes in the volume fractions of phases in an alloy based on orthorhombic titanium aluminide ( O phase) alloy upon its quenching is studied. X-ray diffraction analysis is used to determine the lattice parameters of phases. It has been shown that hydrogen is dissolved mainly in the β0 phase. Differential thermal analysis is used to determine stages and temperature ranges of phase transformations during heating; it was found that introduced hydrogen shifts the β0 → O and reverse O → β0 transformations into the low-temperature range; the enthalpies of transformation are calculated.

  1. Strain effect on electronic structure and thermoelectric properties of orthorhombic SnSe: A first principles study

    SciTech Connect

    Cuong, Do Duc; Rhim, S. H. Hong, Soon Cheol; Lee, Joo-Hyong

    2015-11-15

    Strain effect on thermoelectricity of orthorhombic SnSe is studied using density function theory. The Seebeck coefficients are obtained by solving Boltzmann Transport equation (BTE) with interpolated band energies. As expected from the crystal structure, calculated Seebeck coefficients are highly anisotropic, and agree well with experiment. Changes in the Seebeck coefficients are presented, when strain is applied along b and c direction with strength from -3% to +3%, where influence by band gaps and band dispersions are significant. Moreover, for compressive strains, the sign change of Seebeck coefficients at particular direction suggests that the bipolar transport is possible for SnSe.

  2. Tetragonal-to-Orthorhombic Structural Phase Transition at 90Kin the Superconductor Fe1:01Se

    SciTech Connect

    McQueen, T.M.; Tao, J.; Williams, A.J.; Stephens, P.W.; Zhu, Y.; Ksenofontov, V.; Casper, F.; 4 C.; Cava, R.J.

    2009-07-30

    In this Letter we show that superconducting Fe{sub 1.01}Se undergoes a structural transition at 90 K from a tetragonal to an orthorhombic phase but that nonsuperconducting Fe{sub 1.03}Se does not. High resolution electron microscopy at low temperatures further reveals an unexpected additional modulation of the crystal structure of the superconducting phase that involves displacements of the Fe atoms, and that the nonsuperconducting composition shows a different, complex nanometer-scale structural modulation. Finally, we show that magnetism is not the driving force for the phase transition in the superconducting phase.

  3. Epitaxial solar-cell fabrication, phase 2

    NASA Technical Reports Server (NTRS)

    Daiello, R. V.; Robinson, P. H.; Kressel, H.

    1977-01-01

    Dichlorosilane (SiH2Cl2) was used as the silicon source material in all of the epitaxial growths. Both n/p/p(+) and p/n/n(+) structures were studied. Correlations were made between the measured profiles and the solar cell parameters, especially cell open-circuit voltage. It was found that in order to obtain consistently high open-circuit voltage, the epitaxial techniques used to grow the surface layer must be altered to obtain very abrupt doping profiles in the vicinity of the junction. With these techniques, it was possible to grow reproducibly both p/n/n(+) and n/p/p(+) solar cell structures having open-circuit voltages in the 610- to 630-mV range, with fill-factors in excess of 0.80 and AM-1 efficiencies of about 13%. Combinations and comparisons of epitaxial and diffused surface layers were also made. Using such surface layers, we found that the blue response of epitaxial cells could be improved, resulting in AM-1 short-circuit current densities of about 30 mA/cm sq. The best cells fabricated in this manner had AM-1 efficiency of 14.1%.

  4. New Sources for Chemical Beam Epitaxy.

    DTIC Science & Technology

    2007-11-02

    TBP, BPE , TDMAP, and TBBDMAP. This work has resulted in: (1) further development of safe and improved sources specifically for chemical beam epitaxy... BPE , TDMAP, and TBBDMAP was performed. The first reported growth of GaInP without precracking the phosphorous source, TDMAP, and the first reported

  5. Improved Boat For Liquid-Phase Epitaxy

    NASA Technical Reports Server (NTRS)

    Connolly, John C.

    1991-01-01

    Liquid-phase epitaxial (LPE) growth boat redesigned. Still fabricated from ultra-high-purity graphite, but modified to permit easy disassembly and cleaning, along with improved wiping action for more complete removal of melt to reduce carry-over of gallium. Larger substrates and more uniform composition obtained.

  6. Electrostatic transfer of epitaxial graphene to glass.

    SciTech Connect

    Ohta, Taisuke; Pan, Wei; Howell, Stephen Wayne; Biedermann, Laura Butler; Beechem Iii, Thomas Edwin; Ross, Anthony Joseph, III

    2010-12-01

    We report on a scalable electrostatic process to transfer epitaxial graphene to arbitrary glass substrates, including Pyrex and Zerodur. This transfer process could enable wafer-level integration of graphene with structured and electronically-active substrates such as MEMS and CMOS. We will describe the electrostatic transfer method and will compare the properties of the transferred graphene with nominally-equivalent 'as-grown' epitaxial graphene on SiC. The electronic properties of the graphene will be measured using magnetoresistive, four-probe, and graphene field effect transistor geometries [1]. To begin, high-quality epitaxial graphene (mobility 14,000 cm2/Vs and domains >100 {micro}m2) is grown on SiC in an argon-mediated environment [2,3]. The electrostatic transfer then takes place through the application of a large electric field between the donor graphene sample (anode) and the heated acceptor glass substrate (cathode). Using this electrostatic technique, both patterned few-layer graphene from SiC(000-1) and chip-scale monolayer graphene from SiC(0001) are transferred to Pyrex and Zerodur substrates. Subsequent examination of the transferred graphene by Raman spectroscopy confirms that the graphene can be transferred without inducing defects. Furthermore, the strain inherent in epitaxial graphene on SiC(0001) is found to be partially relaxed after the transfer to the glass substrates.

  7. Interface control of a morphotropic phase boundary in epitaxial samarium modified bismuth ferrite superlattices

    NASA Astrophysics Data System (ADS)

    Maran, Ronald; Yasui, Shintaro; Eliseev, Eugene A.; Glinchuk, Maya D.; Morozovska, Anna N.; Funakubo, Hiroshi; Takeuchi, Ichiro; Nagarajan, Valanoor

    2014-12-01

    Interfacial control of a polar-(rhombohedral) to-non-polar (orthorhombic) phase transition in (001)-oriented epitaxial BiFe O3 / (B i1 -xS mx ) Fe O3 superlattices is presented. We demonstrate controlling the composition at which a polar phase transformation takes place by tuning the strength of the interlayer interactions while holding the average composition constant. It is shown that the thickness of the superlattice layers has a strong influence on the interlayer polar coupling, which in turn changes the phase transition. For the shortest periods studied (layers 5- and 10-nm thick) the onset of the phase transition is suppressed along with a significant broadening (as a function of S m3 + concentration) of an incommensurately modulated phase determined by two-dimensional x-ray diffraction mapping. Consequently, a ferroelectric character with robust polarization hysteresis and enhanced dielectric constant is observed even for substitution concentration of S m3 + which would otherwise lead to a leaky paraelectric in single-layer (B i1 -xS mx)Fe O3 films. The experimental results are fully consistent with a mean-field thermodynamic theory which reveals that the strength of the interlayer coupling is strongly affected by the polar-polar interaction across the interface.

  8. Multiferroic fluoride BaCoF4 Thin Films Grown Via Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Borisov, Pavel; Johnson, Trent; García-Castro, Camilo; Kc, Amit; Schrecongost, Dustin; Cen, Cheng; Romero, Aldo; Lederman, David

    Multiferroic materials exhibit exciting physics related to the simultaneous presence of multiple long-range orders, in many cases consisting of antiferromagnetic (AF) and ferroelectric (FE) orderings. In order to provide a new, promising route for fluoride-based multiferroic material engineering, we grew multiferroic fluoride BaCoF4 in thin film form on Al2O3 (0001) substrates by molecular beam epitaxy. The films grow with the orthorhombic b-axis out-of-plane and with three in-plane structural twin domains along the polar c-axis directions. The FE ordering in thin films was verified by FE remanent hysteresis loops measurements at T = 14 K and by room temperature piezoresponse force microscopy (PFM). An AF behavior was found below Neel temperature TN ~ 80 K, which is in agreement with the bulk properties. At lower temperatures two additional magnetic phase transitions at 19 K and 41 K were found. First-principles calculations demonstrated that the growth strain applied to the bulk BaCoF4 indeed favors two canted spin orders, along the b- and a-axes, respectively, in addition to the main AF spin order along the c-axis. Supported by FAME (Contract 2013-MA-2382), WV Research Challenge Grant (HEPC.dsr.12.29), and DMREF-NSF 1434897.

  9. Growth of ZnSnN2 by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Feldberg, N.; Aldous, J. D.; Stampe, P. A.; Kennedy, R. J.; Veal, T. D.; Durbin, S. M.

    2014-04-01

    The Zn-IV-N2 family of materials represents a potential earth abundant element alternative to conventional compound semiconductor materials that are based on gallium and indium. While both ZnSiN2 and ZnGeN2 have been studied to some degree, very little is known about the narrow-gap member ZnSnN2. Here, we investigate the growth dynamics of crystalline ZnSnN2 through plasma-assisted molecular beam epitaxy. All films exhibit some degree of crystalline order regardless of growth conditions, although significant tin coverage was observed for films grown with low Zn:Sn flux ratio; Zn flux in particular became increasingly problematic at increased substrate temperatures designed to improve crystallinity. Single-crystal material was achieved through careful optimization of growth parameters. Regardless of deposition conditions or substrate choice, however, all films exhibit a monoclinic structure as opposed to the predicted orthorhombic lattice; this can be directly attributed to sublattice disorder.

  10. Electronic and Elastic Properties of CrO2 in the Orthorhombic CaCl2-TYPE Structure

    NASA Astrophysics Data System (ADS)

    Wu, H. Y.; Chen, Y. H.; Deng, C. R.; Su, X. F.

    2012-07-01

    The structure, electronic and elastic properties of CrO2 in the high pressure orthorhombic CaCl2 (Pnnm) phase are investigated by first-principles calculations based on density functional theory (DFT). Our calculated crystal parameters are in good agreement with the available experimental data. The electronic band structure, density of state (DOS) and projected density of state (PDOS) at 14 GPa are studied within local spin density approximation (LSDA) and generalized gradient approximation (GGA) in details. The CaCl2 phase of CrO2 still has the half metal character, which is in accordance with previous theoretical predictions. The elastic constants, bulk modulus, shear modulus, Young's modulus and Poisson ratio under pressures are successfully obtained for the orthorhombic CaCl2 phase of CrO2. This structure is mechanically stable at our applied range of pressures. The calculated elastic anisotropic factors show that the CaCl2 phase of CrO2 is provided with high elastic anisotropy and the elastic anisotropy decreases with increasing pressures. The propagation speed of transverse, longitudinal elastic wave together with associated Debye temperatures are also estimated.

  11. Field Induced Phase Transition with Quadrupole Fluctuation in HoFe2Al10 with Orthorhombic Symmetry

    NASA Astrophysics Data System (ADS)

    Kamikawa, Shuhei; Ishii, Isao; Takezawa, Kohki; Sakami, Tatsuhiro; Nakagawa, Fumiya; Tanida, Hiroshi; Sera, Masafumi; Suzuki, Takashi

    2017-04-01

    To explore phase transitions in HoFe2Al10 with an orthorhombic structure, we performed ultrasonic measurements on transverse elastic moduli C55 and C66 under magnetic fields H. At zero magnetic field, C55 and C66 show an elastic softening down to 0.5 K without a clear anomaly, suggesting that no phase transition exists at zero magnetic field. However, in H along the a- and c-axes, the softening of C55 under 0.6 (0.4) T stops at TQ = 0.8 (0.75) K for H || a (c). Below TQ, C55 shows an elastic hardening. With further increasing H, we observed a remarkable softening of C55 toward TQ. C66 also shows a kink anomaly at TQ in H || a and c. From the results, we clarified the field induced phase transition for H || a and c in HoFe2Al10. The minimum point of C55 at TQ suggests that the field induced phase transition results from a quadrupolar ordering with the order parameter of quadrupole Ozx despite a singlet ground state under an orthorhombic crystal electric field in HoFe2Al10.

  12. Orthorhombic phases with large unit cells coexisting with the decagonal quasicrystal in an AlCoNiTb alloy

    SciTech Connect

    Yu, R.C. . Beijing Lab. of Electron Microscopy Jilin Univ., Changchun . Dept. of Physics); Li, X.Z.; Zhang, Z.; Kuo, K.H. . Beijing Lab. of Electron Microscopy); Xu, D.P.; Su, W.H. . Dept. of Physics)

    1994-11-15

    Elser and Henley suggested that if the irrational golden number [tau] = (1 + [radical]5)/2 associated with the three mutually orthogonal, equivalent twofold axes in an IQC (icosahedral quasicrystal) is approximated by a rational ratio of two consecutive Fibonacci numbers (0, 1, 1, 2, 3, 5, 8, [hor ellipsis], F[sub 0] = 0, F[sub 1] = 1, and F[sub n+1] = F[sub n] + F[sub n[minus]1]), such as F[sub n+1]/F[sub n] = 1/0, 1/1, 2/1, 3/2, 5/3, 8/5, [hor ellipsis], then a cubic crystalline phase generally called an approximant will result. Such an analysis has been extended later to 2-dimensional decagonal quasicrystals (DQCs). If the irradiation [tau] along two mutually orthogonal, non-equivalent, quasiperiodic twofold directions perpendicular to the periodic tenfold axis of a DQC is replaced by rational ratios F[sub n+1]/F[sub n], an orthorhombic approximant with a large unit cell will form. This not only explains the existing orthorhombic Al-TM (transitional metals) phases with large unit cells, such as Al[sub 60]Mn[sub 11]Ni[sub 4] and Al[sub 3]Mn, but also predicts many new approximants with even larger unit cells some of which have been found experimentally afterwards.

  13. Electrochemical characterization of orthorhombic Na{sub x}MnO{sub 2} for alkali metal polymer batteries

    SciTech Connect

    Doeff, M.M.; Ding, Lie; DeJonghe, L.C.

    1995-04-01

    Electrochemical potential spectroscopy (ECPS) has been used successfully to observe and explain ordering transitions in orthorhombic Na{sub x}MnO{sub 2} as it is discharged in a sodium/polymer cell. Features can be assigned on the basis of sequential filling of sites in the small and then the large tunnels of the structure as the reduction progresses. Intercalation of lithium into Na{sub x}MnO{sub 2} may be less straightforward than that of sodium, and is worthy of investigation by ECPS. Li/Na{sub x}MnO{sub 2} cells have a greater discharge capacity than Na/Na{sub x}MnO{sub 2} cells, suggesting that more than four lithiums per large tunnel can be inserted. (It is also possible, but less likely that more than one lithium can be placed inside the small tunnels.) This implies that the sites for lithium occupancy might be somewhat different than that for sodium. Further investigation into the properties of orthorhombic Na{sub x}MnO{sub 2} and its utility as a positive electrode for rechargeable sodium and lithium cells is presently underway in this laboratory.

  14. Phase stability, mechanical and thermodynamic properties of orthorhombic and trigonal MgSiN2: an ab initio study

    NASA Astrophysics Data System (ADS)

    Arab, Fahima; Sahraoui, F. Ali; Haddadi, Khelifa; Bouhemadou, Abdelmadjid; Louail, Layachi

    2016-05-01

    Structural stability and mechanical and thermodynamic properties of the orthorhombic and trigonal MgSiN2 polymorphs (or-MgSiN2 and tr-MgSiN2) were investigated through density functional theory and quasi-harmonic Debye model (QHDM). Our calculations show that or-MgSiN2 is energetically the stable polymorph at low pressure, in agreement with previous experimental and theoretical study. Under pressure, a crystallographic transition from the orthorhombic structure to the trigonal one occurs around 25, 17.45 and 19.05 GPa as obtained from the generalized gradient approximation of Perdew-Wang (GGA-PW91), the generalized gradient approximation parameterized recently by Perdew et al (GGA-PBEsol) and the local density approximation developed by Ceperley and Alder and parameterized by Perdew and Zunger (LDA-CAPZ), respectively. Single-crystalline and polycrystalline elastic constants and related properties, namely Vickers hardness, acoustic Grüneisen parameter, minimum thermal conductivity, isotropic sound velocities and Debye temperature, were numerically estimated for both or-MgSiN2 and tr-MgSiN2. We have showed that the hardness of tr-MgSiN2 is comparable to that of the harder materials like c-BN and B6O. Temperature and pressure dependencies of volume, bulk modulus, thermal expansion, Grüneisen parameter, heat capacities and Debye temperature were investigated using QHDM.

  15. Photoluminescence studies in epitaxial CZTSe thin films

    NASA Astrophysics Data System (ADS)

    Sendler, Jan; Thevenin, Maxime; Werner, Florian; Redinger, Alex; Li, Shuyi; Hägglund, Carl; Platzer-Björkman, Charlotte; Siebentritt, Susanne

    2016-09-01

    Epitaxial Cu 2 ZnSnSe 4 (CZTSe) thin films were grown by molecular beam epitaxy on GaAs(001) using two different growth processes, one containing an in-situ annealing stage as used for solar cell absorbers and one for which this step was omitted. Photoluminescences (PL) measurements carried out on these samples show no dependence of the emission shape on the excitation intensity at different temperatures ranging from 4 K to 300 K . To describe the PL measurements, we employ a model with fluctuating band edges in which the density of states of the resulting tail states does not seem to depend on the excited charge carrier density. In this interpretation, the PL measurements show that the annealing stage removes a defect level, which is present in the samples without this annealing.

  16. Wafer bonded epitaxial templates for silicon heterostructures

    NASA Technical Reports Server (NTRS)

    Atwater, Harry A., Jr. (Inventor); Zahler, James M. (Inventor); Morral, Anna Fontcubera I (Inventor)

    2008-01-01

    A heterostructure device layer is epitaxially grown on a virtual substrate, such as an InP/InGaAs/InP double heterostructure. A device substrate and a handle substrate form the virtual substrate. The device substrate is bonded to the handle substrate and is composed of a material suitable for fabrication of optoelectronic devices. The handle substrate is composed of a material suitable for providing mechanical support. The mechanical strength of the device and handle substrates is improved and the device substrate is thinned to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. An upper portion of the device film exfoliated from the device substrate is removed to provide a smoother and less defect prone surface for an optoelectronic device. A heterostructure is epitaxially grown on the smoothed surface in which an optoelectronic device may be fabricated.

  17. Domain epitaxy for thin film growth

    DOEpatents

    Narayan, Jagdish

    2005-10-18

    A method of forming an epitaxial film on a substrate includes growing an initial layer of a film on a substrate at a temperature T.sub.growth, said initial layer having a thickness h and annealing the initial layer of the film at a temperature T.sub.anneal, thereby relaxing the initial layer, wherein said thickness h of the initial layer of the film is greater than a critical thickness h.sub.c. The method further includes growing additional layers of the epitaxial film on the initial layer subsequent to annealing. In some embodiments, the method further includes growing a layer of the film that includes at least one amorphous island.

  18. Wafer bonded epitaxial templates for silicon heterostructures

    DOEpatents

    Atwater, Jr., Harry A.; Zahler, James M.; Morral, Anna Fontcubera I

    2008-03-11

    A heterostructure device layer is epitaxially grown on a virtual substrate, such as an InP/InGaAs/InP double heterostructure. A device substrate and a handle substrate form the virtual substrate. The device substrate is bonded to the handle substrate and is composed of a material suitable for fabrication of optoelectronic devices. The handle substrate is composed of a material suitable for providing mechanical support. The mechanical strength of the device and handle substrates is improved and the device substrate is thinned to leave a single-crystal film on the virtual substrate such as by exfoliation of a device film from the device substrate. An upper portion of the device film exfoliated from the device substrate is removed to provide a smoother and less defect prone surface for an optoelectronic device. A heterostructure is epitaxially grown on the smoothed surface in which an optoelectronic device may be fabricated.

  19. Junction Transport in Epitaxial Film Silicon Heterojunction Solar Cells: Preprint

    SciTech Connect

    Young, D. L.; Li, J. V.; Teplin, C. W.; Stradins, P.; Branz, H. M.

    2011-07-01

    We report our progress toward low-temperature HWCVD epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous Si (a-Si) on our n-type epitaxial crystal Si on n++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

  20. Method of deposition by molecular beam epitaxy

    DOEpatents

    Chalmers, Scott A.; Killeen, Kevin P.; Lear, Kevin L.

    1995-01-01

    A method is described for reproducibly controlling layer thickness and varying layer composition in an MBE deposition process. In particular, the present invention includes epitaxially depositing a plurality of layers of material on a substrate with a plurality of growth cycles whereby the average of the instantaneous growth rates for each growth cycle and from one growth cycle to the next remains substantially constant as a function of time.

  1. Method of deposition by molecular beam epitaxy

    DOEpatents

    Chalmers, S.A.; Killeen, K.P.; Lear, K.L.

    1995-01-10

    A method is described for reproducibly controlling layer thickness and varying layer composition in an MBE deposition process. In particular, the present invention includes epitaxially depositing a plurality of layers of material on a substrate with a plurality of growth cycles whereby the average of the instantaneous growth rates for each growth cycle and from one growth cycle to the next remains substantially constant as a function of time. 9 figures.

  2. Chemical Beam Epitaxy of ZnSe

    DTIC Science & Technology

    1990-10-17

    is curren:ly underway in Japan and Europe with major investment in funds and manpower. However, the problems which remain are largely still an issue...of availability of suitable materials, specifically availability of p-type ZnSe with sufficient useable hole carrier concentrations. The problem ...contract provided essential seed funding necessary to accumulate sufficient funds to build and equip a state-or-the-art chemical beam epitaxy facility at

  3. Epitaxy: Programmable Atom Equivalents Versus Atoms.

    PubMed

    Wang, Mary X; Seo, Soyoung E; Gabrys, Paul A; Fleischman, Dagny; Lee, Byeongdu; Kim, Youngeun; Atwater, Harry A; Macfarlane, Robert J; Mirkin, Chad A

    2017-01-24

    The programmability of DNA makes it an attractive structure-directing ligand for the assembly of nanoparticle (NP) superlattices in a manner that mimics many aspects of atomic crystallization. However, the synthesis of multilayer single crystals of defined size remains a challenge. Though previous studies considered lattice mismatch as the major limiting factor for multilayer assembly, thin film growth depends on many interlinked variables. Here, a more comprehensive approach is taken to study fundamental elements, such as the growth temperature and the thermodynamics of interfacial energetics, to achieve epitaxial growth of NP thin films. Both surface morphology and internal thin film structure are examined to provide an understanding of particle attachment and reorganization during growth. Under equilibrium conditions, single crystalline, multilayer thin films can be synthesized over 500 × 500 μm(2) areas on lithographically patterned templates, whereas deposition under kinetic conditions leads to the rapid growth of glassy films. Importantly, these superlattices follow the same patterns of crystal growth demonstrated in atomic thin film deposition, allowing these processes to be understood in the context of well-studied atomic epitaxy and enabling a nanoscale model to study fundamental crystallization processes. Through understanding the role of epitaxy as a driving force for NP assembly, we are able to realize 3D architectures of arbitrary domain geometry and size.

  4. Epitaxial Crystal Growth: Methods and Materials

    NASA Astrophysics Data System (ADS)

    Capper, Peter; Irvine, Stuart; Joyce, Tim

    The epitaxial growth of thin films of material for a wide range of applications in electronics and optoelectronics is a critical activity in many industries. The original growth technique used, in most instances, was liquid-phase epitaxy (LPE), as this was the simplest and often the cheapest route to producing device-quality layers. These days, while some production processes are still based on LPE, most research into and (increasingly) much of the production of electronic and optoelectronic devices now centers on metalorganic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). These techniques are more versatile than LPE (although the equipment is more expensive), and they can readily produce multilayer structures with atomic-layer control, which has become more and more important in the type of nanoscale engineering used to produce device structures in as-grown multilayers. This chapter covers these three basic techniques, including some of their more common variants, and outlines the relative advantages and disadvantages of each. Some examples of growth in various important systems are also outlined for each of the three techniques.

  5. Selective epitaxy using the gild process

    DOEpatents

    Weiner, Kurt H.

    1992-01-01

    The present invention comprises a method of selective epitaxy on a semiconductor substrate. The present invention provides a method of selectively forming high quality, thin GeSi layers in a silicon circuit, and a method for fabricating smaller semiconductor chips with a greater yield (more error free chips) at a lower cost. The method comprises forming an upper layer over a substrate, and depositing a reflectivity mask which is then removed over selected sections. Using a laser to melt the unmasked sections of the upper layer, the semiconductor material in the upper layer is heated and diffused into the substrate semiconductor material. By varying the amount of laser radiation, the epitaxial layer is formed to a controlled depth which may be very thin. When cooled, a single crystal epitaxial layer is formed over the patterned substrate. The present invention provides the ability to selectively grow layers of mixed semiconductors over patterned substrates such as a layer of Ge.sub.x Si.sub.1-x grown over silicon. Such a process may be used to manufacture small transistors that have a narrow base, heavy doping, and high gain. The narrowness allows a faster transistor, and the heavy doping reduces the resistance of the narrow layer. The process does not require high temperature annealing; therefore materials such as aluminum can be used. Furthermore, the process may be used to fabricate diodes that have a high reverse breakdown voltage and a low reverse leakage current.

  6. Composition and temperature-induced structural evolution in La, Sm, and Dy substituted BiFeO3 epitaxial thin films at morphotropic phase boundaries

    NASA Astrophysics Data System (ADS)

    Kan, Daisuke; Cheng, Ching-Jung; Nagarajan, Valanoor; Takeuchi, Ichiro

    2011-07-01

    Detailed structural investigations on the substitution-induced structural phase transition from the rhombohedral phase to an orthorhombic phase in (Bi,RE)FeO3 epitaxial thin films (RE = La, Sm, and Dy) grown on (100) SrTiO3 substrates are presented. X ray diffraction reveals that the unit cell dimensions of the orthorhombic phase are strongly dependent on the type of the RE dopant. For RE = La3+ ion, which has an ionic size comparable to the Bi3+ ion, the unit cell is found to be a0 × a0 × 2a0, where a0 is the pseudo-cubic lattice parameter. This is in contrast with the √2a0 × √2a0 × 2a0 unit cell for the case of smaller ionic radius RE (= Sm and Dy) elements. While clear double-hysteresis loops in the polarization versus electric-field curves due to field-induced transitions are observed for smaller ionic radius RE (= Sm and Dy), no signature of the double hysteresis loops is observed for the RE = La case across the structural boundary. We have also performed systematic tracking of the structural phases as functions of the RE composition and temperature, based on which we propose a phase diagram. This work reveals that the ionic size of the RE element plays a critical role in the evolution of the structural and functional properties of RE-substituted BiFeO3 thin film materials systems.

  7. Synthesis, photoluminescence and Judd-Ofelt parameters of LiNa3P2O7:Eu3+ orthorhombic microstructures

    NASA Astrophysics Data System (ADS)

    Munirathnam, K.; Dillip, G. R.; Raju, B. Deva Prasad; Joo, S. W.; Dhoble, S. J.; Nagabhushana, B. M.; Hari Krishna, R.; Ramesh, K. P.; Varadharaj Perumal, S.; Prakashbabu, D.

    2015-09-01

    We report, for the first time, the photoluminescence properties of Eu3+-doped LiNa3P2O7 phosphor, synthesized by a facile solid-state reaction method in air atmosphere. The crystal structure and phase purity of the phosphors were analyzed by X-ray diffraction analysis. Orthorhombic structural morphology was identified by scanning electron microscopy. The phosphate groups in the phosphor were confirmed by Fourier transform infrared analysis. Bandgap of the phosphor was calculated from the diffuse reflectance spectra data using Kubelka-Munk function. Under 395-nm UV excitation, the phosphors show signs of emitting red color due to the 5D0 → 7F2 transition. In accordance with Judd-Ofelt theory, spectroscopic parameters such as oscillator intensity parameter Ω t ( t = 2), spontaneous emission probabilities, fluorescence branching ratios and radiative lifetimes were calculated and analyzed for the first time in this system.

  8. Ferroelectricity and competing interactions in Ho-deficient non-stoichiometric orthorhombic HoMnO3

    NASA Astrophysics Data System (ADS)

    Wang, J. X.; Yan, Z. B.; Xie, Y. L.; Zhou, X. H.; Liu, J.-M.

    2015-05-01

    We investigate the consequences of the Ho-deficient non-stoichiometry in orthorhombic HoMnO3 in terms of microscopic mechanisms for ferroelectricity modulation. It is suggested that the Ho-deficiency (then Mn excess) results in Ho-vacancies and then Mn occupation of the Ho-site with increasing non-stoichiometry. The Ho-deficiency enhances the Mn-Mn symmetric exchange striction by suppressing the independent Ho-Ho interaction, and thus benefits to the induced Ho spin ordering against the independent Ho spin ordering. The symmetric Ho-Mn exchange striction is thus enhanced by this induced Ho spin ordering, leading to remarkably enhanced ferroelectric polarization as observed. This work presents an alternative scheme to modulate the multiferroicity in rare-earth manganites of strong 4f-3d coupling.

  9. The ultraviolet and visible luminescence of Bi3+ in the orthorhombic perovskite, GdAlO3

    NASA Astrophysics Data System (ADS)

    Srivastava, A. M.; Comanzo, H. A.

    2017-01-01

    The spectroscopic properties of the Bi3+ ion as a function of its concentration is examined to clarify the nature of optical transitions that are responsible for the ultraviolet (333 nm) and visible emission of GdAlO3:Bi3+. The UV band which is characterized by small Stokes shift (0.52 eV) is ascribed to emission from isolated Bi3+ ions (3P0,1 → 1S0 transition). The peak emission wavelength and the width of the visible band depend on the Bi3+ concentration. This emission is ascribed to pairs or cluster of Bi3+ ions in the perovskite lattice. The spectroscopic properties of the pair emission in GdAlO3 are contrasted with the impurity trapped excitonic emission in CaSnO3. A comparative study of the behavior of Bi3+ luminescence in a series of materials with the orthorhombic perovskite structure is presented.

  10. Interface-controlled fatigue cracking of SCS-6/Ti-22Al-23Nb orthorhombic titanium aluminide composite

    SciTech Connect

    Her, Y.C.; Wang, P.C.; Yang, J.M.

    1998-11-01

    The effect of aging at elevated temperature on interfacial stability and fatigue behavior of a SCS-6/Ti-22Al-23Nb orthorhombic (O) titanium aluminide composite is investigated. The composite was heat treated in vacuum at 900 C for up to 250 hours to change the microstructural characteristics. The stability of the matrix alloy and interfacial reaction zone after extended thermal exposure was analyzed. The effect of interface on fatigue behavior, including stiffness degradation, evolution of fatigue damage, and crack growth rates, was characterized. Finally, a modified shear-lag model was used to predict the saturated matrix crack spacing in the composite under fatigue loading. The results demonstrate that aging at elevated temperature affects the stability of the interfacial reaction zone, which, in turn, degrades the fatigue properties of the composite. However, fatigue crack will not developed from the ruptured interfacial reaction layer until the thickness of the reaction zone or the maximum applied stress exceeds a critical value.

  11. Structure of the welding zone between titanium and orthorhombic titanium aluminide for explosion welding: II. Local melting zones

    NASA Astrophysics Data System (ADS)

    Grinberg, B. A.; Ivanov, M. A.; Rybin, V. V.; Kuz'min, S. V.; Lysak, V. I.; Elkina, O. A.; Patselov, A. M.; Antonova, O. V.; Inozemtsev, A. V.

    2011-10-01

    The structure and chemical composition of the local melting zones that form during explosion welding of orthorhombic titanium aluminide with commercial-purity titanium near a wavy interface between them are studied. The Rayleigh number is estimated to propose a possible mechanism for the formation of a concentric structure in these zones. Titanium aluminide fragments are detected near the zone boundaries. It is assumed that the fragmentation in the transition zone is caused by the division of a material into loosely coupled microvolumes under the action of a strong external action in a time comparable with the explosion time. Outside the transition zone, fragmentation occurs via a traditional way beginning from dislocation accumulation. Both processes occur in titanium aluminide and only one process (banded structure formation) takes place in titanium.

  12. Magnetic structure and properties of orthorhombic Li2Ni(SO4)2: A possible magnetoelectric material

    NASA Astrophysics Data System (ADS)

    Reynaud, Marine; Rodríguez-Carvajal, Juan; Chotard, Jean-Noël; Tarascon, Jean-Marie; Rousse, Gwenaëlle

    2014-03-01

    In this paper, we report on the structural and magnetic properties, as deduced from susceptibility measurements and neutron powder diffraction experiments, of an orthorhombic nickel disulfate, Li2Ni(SO4)2. This phase presents NiO6 octahedra linked via SO4 groups only, leading to an antiferromagnetic behavior resulting from super-super-exchange interactions. Magnetic moments order below TN = 28 K and the observed magnetic structure can be explained using two antiferromagnetic and one ferromagnetic exchange interactions, which are discussed in relation with the Goodenough-Kanamori-Anderson rules. The magnetic structure, with k = (0, 0, 0), has the symmetry Pb' c'a' that has the inversion center associated with time inversion, so the compound should be a linear magnetoelectric.

  13. Mapping of second-nearest-neighbor fluoride ions of orthorhombic Gd 3+-Ag + complexes in CaF 2

    NASA Astrophysics Data System (ADS)

    Nakata, R.; Den Hartog, H. W.

    The ENDOR technique is applied to determine the positions of 24 second-nearest-neighbor F - ions around an orthorhombic Gd 3+-Ag + complex in CaF 2 crystals. Experimental ENDOR data of the second-nearest-neighbor F - ions are analyzed by using the usual spin Hamiltonian and a least-squares fitting method. The best fits of the experimental results give superhyperfine (shf) constants and the F - directions ( K, L, M) with respect to the Gd 3+ ion, from which the distance between the second-nearest-neighbor F - ion and the Gd 3+ ion is determined by assuming that the hyperfine interaction is due to the classical dipole-dipole interaction. The displacements of the F - ions are estimated and compared with the theoretical values calculated by Bijvank and den Hartog on the basis of a polarizable point charge model.

  14. AFM observation of the surface morphology and impurity effects on orthorhombic hen egg-white lysozyme crystals

    NASA Astrophysics Data System (ADS)

    Matsuzuki, Y.; Kubota, T.; Liu, X. Y.; Ataka, M.; Takano, K. J.

    2002-07-01

    Cation-exchange high performance liquid chromatography at pH 6, developed originally to purify human lysozyme, was applied to hen egg-white lysozyme. We could remove at least three kinds of impurities from the commercial product. The impurities were considered to be modified lysozyme molecules, mostly based on N-terminal amino acid analyses. Atomic force microscopic observation was made on the crystals both from the purified and non-purified solutions. The (1 1 0) faces of the orthorhombic crystals grown at 40°C from the purified solution contained linear steps, while most of the linear edges became round and rugged on the crystals from non-purified solutions. A similar change in step morphology is known to occur on insulin crystals when two amino acids were mutated from the wild type. On the (0 1 0) face, elongated, round steps became rugged when crystals grew from non-purified solutions.

  15. Ferroelectricity and competing interactions in Ho-deficient non-stoichiometric orthorhombic HoMnO{sub 3}

    SciTech Connect

    Wang, J. X.; Yan, Z. B.; Xie, Y. L.; Zhou, X. H.; Liu, J.-M.

    2015-05-07

    We investigate the consequences of the Ho-deficient non-stoichiometry in orthorhombic HoMnO{sub 3} in terms of microscopic mechanisms for ferroelectricity modulation. It is suggested that the Ho-deficiency (then Mn excess) results in Ho-vacancies and then Mn occupation of the Ho-site with increasing non-stoichiometry. The Ho-deficiency enhances the Mn-Mn symmetric exchange striction by suppressing the independent Ho-Ho interaction, and thus benefits to the induced Ho spin ordering against the independent Ho spin ordering. The symmetric Ho-Mn exchange striction is thus enhanced by this induced Ho spin ordering, leading to remarkably enhanced ferroelectric polarization as observed. This work presents an alternative scheme to modulate the multiferroicity in rare-earth manganites of strong 4f-3d coupling.

  16. Non-planar Dzyaloshinskii spirals and magnetic domain walls in non-centrosymmetric systems with orthorhombic anisotropy.

    PubMed

    Heide, Marcus; Bihlmayer, Gustav; Blügel, Stefan

    2011-04-01

    The basic micromagnetic models of Landau, Lifshitz, and Dzyaloshinskii, are extended by an anisotropy term with two independent parameters. The resulting ground states of the magnetic domains and the domain-wall profiles are discussed for crystal lattices with orthorhombic unit cells. In these simple geometries, the magnetization is not confined to a single plane. Depending on the relations between the spin-stiffness, anisotropy, and Dzyaloshinskii-Moriya interaction several different zero-temperature phases of the magnetic structure are found. The corresponding phase diagrams are obtained numerically. Analytical results are given for some special cases. The studied model is of particular relevance for magnetic wires, nanostripes and ultrathin magnetic films deposited on non-magnetic surfaces.

  17. A new phase in the system lithium-aluminum: Characterization of orthorhombic Li{sub 2}Al

    SciTech Connect

    Puhakainen, Kati; Bostroem, Magnus; Groy, Thomas L.; Haeussermann, Ulrich

    2010-11-15

    Investigation of the Li rich part of the binary Li-Al system revealed the existence of a new phase, orthorhombic Li{sub 2}Al, which is isostructural to Li{sub 2}Ga and Li{sub 2}In. The crystal structure was determined from single crystal X-ray diffraction data (Cmcm, a=4.658(2) A, b=9.767(4) A, c=4.490(2) A, Z=4). Refinement of atomic position site occupancies yielded a composition Li{sub 1.92}Al{sub 1.08} (64 at% Li) indicating a small homogeneity range, Li{sub 2-x}Al{sub 1+x}. Li{sub 2}Al is the peritectic decomposition product of the stoichiometric compound Li{sub 9}Al{sub 4}, which is stable below 270{+-}2 {sup o}C. Li{sub 2}Al itself decomposes peritectically to Li{sub 3}Al{sub 2} and Li rich melt at 335{+-}2 {sup o}C. The discovery of Li{sub 2}Al (Li{sub 2-x}Al{sub 1+x}) settles a long standing inconsistency in the Li-Al phase diagram which was based on the assumption that Li{sub 9}Al{sub 4} possesses a high temperature modification. - Graphical abstract: A new phase, Li{sub 2}Al, has been discovered in the binary Li-Al system. The structure of orthorhombic Li{sub 2}Al is closely related to that of the established monoclinic phase Li{sub 9}Al{sub 4}.

  18. Epitaxial Approaches to Carbon Nanotube Organization

    NASA Astrophysics Data System (ADS)

    Ismach, Ariel

    Carbon nanotubes have unique electronic, mechanical, optical and thermal properties, which make them ideal candidates as building blocks in nano-electronic and electromechanical systems. However, their organization into well-defined geometries and arrays on surfaces remains a critical challenge for their integration into functional nanosystems. In my PhD, we developed a new approach for the organization of carbon nanotubes directed by crystal surfaces. The principle relies on the guided growth of single-wall carbon nanotubes (SWNTs) by atomic features presented on anisotropic substrates. We identified three different modes of surface-directed growth (or 'nanotube epitaxy'), in which the growth of carbon nanotubes is directed by crystal substrates: We first observed the nanotube unidirectional growth along atomic steps ('ledge-directed epitaxy') and nanofacets ('graphoepitaxy') on the surface of miscut C-plane sapphire and quartz. The orientation along crystallographic directions ('lattice-directed epitaxy') was subsequently observed by other groups on different crystals. We have proposed a "wake growth" mechanism for the nanotube alignment along atomic steps and nanofacets. In this mechanism, the catalyst nanoparticle slides along the step or facet, leaving the nanotube behind as a wake. In addition, we showed that the combination of surface-directed growth with external forces, such as electric-field and gas flow, can lead to the simultaneous formation of complex nanotube structures, such as grids and serpentines. The "wake growth" model, which explained the growth of aligned nanotubes, could not explain the formation of nanotube serpentines. For the latter, we proposed a "falling spaghetti" mechanism, in which the nanotube first grows by a free-standing process, aligned in the direction of the gas flow, then followed by absorption on the stepped surface in an oscillatory manner, due to the competition between the drag force caused by the gas flow on the suspended

  19. Metalorganic vapor phase epitaxy of ternary rhombohedral (Bi1-xSbx) 2 Se3 solid solutions

    NASA Astrophysics Data System (ADS)

    Kuznetsov, P. I.; Yakushcheva, G. G.; Shchamkhalova, B. S.; Luzanov, V. A.; Temiryazev, A. G.; Jitov, V. A.

    2016-01-01

    We studied the metalorganic vapor phase epitaxy (MOVPE) of (Bi1-xSbx) 2Se3 solid solution films with a different Sb content on (001) Al2O3 substrates with thin ZnSe buffer layer in the range of temperatures 250-480 °C. As-grown films were studied by atom force and scanning electron microscopy (AFM and SEM), Raman spectroscopy and X-ray diffractometry (XRD) techniques. To determine the elemental composition of the grown films, we used an energy dispersive spectrometer (EDS). The dependencies of the crystal structure of films on the growth temperature and Sb content (0 ≤ x ≤ 1) were explored. At different growth temperatures we obtained the following bismuth compounds: the films grown at the temperature of 370 °C or lower consist of the pure Bi phase, whereas we got the Bi4Se3 phase at 380 °C, the phase BiSe at 430 °C and Bi2Se3 at the temperature of 460 °C or above. We found out that at the temperature of 480 °C the single-phase films of (Bi1-xSbx) 2Se3 with rhombohedral and orthorhombic lattices are realized when x is less than 0.25 and greater than 0.935, respectively. For 0.25 < x < 0.935 the grown films are composites of rhombohedral and orthorhombic phases. At the temperature of 440 °C we obtained films consisting of three rhombohedral phases (Bi1-xSbx) 4Se3, (Bi1-xSbx) Se and Bi. The room temperature transport properties of rhombohedral samples were characterized using the Van der Pauw technique.

  20. Layered-structural monoclinic–orthorhombic perovskite La{sub 2}Ti{sub 2}O{sub 7} to orthorhombic LaTiO{sub 3} phase transition and their microstructure characterization

    SciTech Connect

    Herrera, G.; Jiménez-Mier, J.; Chavira, E.

    2014-03-01

    The layered-structural ceramics, such as lanthanum titanate (La{sub 2}Ti{sub 2}O{sub 7}), have been known for their good temperature and low dielectric loss at microwave frequencies that make them good candidate materials for high frequency applications. However, few studies have been conducted on the synthesis optimization by sol gel reaction, in particular by acrylamide polymerization route. The interest in La{sub 2}Ti{sub 2}O{sub 7} ceramic has been greatly increased recently due to the effect of oriented grains. This anisotropy of the microstructure leads to anisotropy in dielectric, electrical and mechanical properties. In this study, grain oriented lanthanum titanate was produced by the sol–gel acrylamide polymerization route. The characterizations of the samples were achieved by thermal analysis, X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM), and transmission electron microscopy (TEM). X-ray diffraction indicates that the formation of monoclinic perovskite La{sub 2}Ti{sub 2}O{sub 7} nanocrystals is a necessary first step to obtain orthorhombic LaTiO{sub 3} nanocomposites (with space group Pbnm). In this work we identified that the monoclinic perovskite La{sub 2}Ti{sub 2}O{sub 7} with space group P2{sub 1} transforms its structure into one with the orthorhombic space group Cmc2{sub 1} at approximately 1073 K. The microstructure associated consisted of flaky monoclinic La{sub 2}Ti{sub 2}O{sub 7} nanocomposites in comparison with round-shaped LaTiO{sub 3} nanocomposites. - Highlights: • The flaky-like La{sub 2}Ti{sub 2}O{sub 7} compound was synthesized by sol–gel acrylamide route. • Simultaneous monitoring of the DTA and XRD with temperature was performed. • Phase transformation characterization of La{sub 2}Ti{sub 2}O{sub 7} has been carried out. • The variation of the La{sub 2}Ti{sub 2}O{sub 7} and LaTiO{sub 3} grain morphology has been compared.

  1. Microstructure and Mechanics of Superconductor Epitaxy via the Chemical Solution Deposition Method

    SciTech Connect

    Frederick F. Lange

    2006-11-30

    funding was intermittent to say the least, and funding to support the student and the research expenses has to be supplemented by Lange’s gift funds. During the first part of the second year, strontium zirconate was identified as an alternative to lanthanum manganite as a buffer layer for use on the IBAD MgO superconducting wire. A lattice parameter of 4.101 Angstroms offers a reduced lattice mismatch between the MgO and SrZrO3. Studies were focused on investigating hybrid precursor routes, combining Sr acetate with a number of different Zr alkoxides. Initial results from heat treating precursors to form powders are positive with the formation of orthorhombic SrZrO3 at temperatures between 800°C and 1100°C under a reducing atmosphere of Ar – 5% H2. Buffer layer research on RABiTS substrates were centered on GdAlO3 (3.71 Å) and YAlO3 (3.68 Å) buffer layer materials. Powder experiments in YAlO3 have shown the perovskite phase to be metastable at processing temperatures below 1500 °C. Experiments involving spin coating of YAlO3 precursors have found significant problems involved with wettability of the YAlO3 precursor (Yttrium acetate, Aluminum tri-sec butoxide, DI water and Formic Acid) on RABiTS substrates; this, and the demise of the funds precluded further research using YAlO3. The diminished funds for the second year, and the small, tricked funds during the third year lead to a redirection of the student to another research area., and a stop to any experimental achievements that were much too ambition relative to the available funds. The only positive results obtained during this latter period was the understanding why two dissimilar structures could result in an epitaxial relation. It was shown that two rules of crystal chemistry, cation/anion coordination and charge balance, could be applied to understand the epitaxy of SrTiO3 on Ni c(2 X 2)S, TiO2 (anatase) on LaAlO3, TiO2 (rutile) on r-plane Al2O3, and Zr1-x(Yx)O2 on (0001) Al2O3. This new understanding of

  2. Sequential imposed layer epitaxy of cuprate films

    SciTech Connect

    Laguees, M.; Tebbji, H.; Mairet, V.; Hatterer, C.; Beuran, C.F.; Hass, N.; Xu, X.Z. ); Cavellin, C.D. )

    1994-02-01

    Layer-by-layer epitaxy has been used to grow cuprate films since the discovery of high-Tc compounds. This deposition technique is in principle suitable for the growth of layered crystalline structures. However, the sequential deposition of atomic layer by atomic layer of cuprate compounds has presently not been optimized. Nevertheless, this deposition process is the only one which allows one to build artificial cell structures such as Bi[sub 2]Sr[sub 2]Ca[sub (n[minus]1)]Cu[sub n]O[sub y] with n as large as 10. This process will also be the best one to grow films of the so-called infinite layer phase compounds belonging to the Sr[sub 1[minus]x]Ca[sub x]CuO[sub 2] family, in order to improve the transport properties and the morphological properties of the cuprate films. When performed at high substrate temperature (typically more than 600[degree]C), the layer-by-layer epitaxy of cuprates exhibits usually 3D aggregate nucleation. Then the growth of the film no longer obeys the layer-by-layer sequence imposed during the deposition. We present here two experimental situations of true 2D sequential imposed layer epitaxy; the growth at 500[degree]C under atomic oxygen pressure of Bi[sub 2]Sr[sub 2]CuO[sub 6] and of Sr[sub 1[minus]x]Ca[sub y]CuO[sub 2] phases. 20 refs., 2 figs.

  3. Strain tuning of electronic structure in Bi4Ti3O12-LaCoO3 epitaxial thin films

    SciTech Connect

    Choi, Woo Seok; Lee, Ho Nyung

    2015-05-08

    In this study, we investigated the crystal and electronic structures of ferroelectric Bi4Ti3O12 single-crystalline thin films site-specifically substituted with LaCoO3 (LCO). The epitaxial films were grown by pulsed laser epitaxy on NdGaO3 and SrTiO3 substrates to vary the degree of strain. With increasing the LCO substitution, we observed a systematic increase in the c-axis lattice constant of the Aurivillius phase related with the modification of pseudo-orthorhombic unit cells. These compositional and structural changes resulted in a systematic decrease in the band gap, i.e., the optical transition energy between the oxygen 2p and transition-metal 3d states, based on a spectroscopic ellipsometry study. In particular, the Co 3d state seems to largely overlap with the Ti t2g state, decreasing the band gap. Interestingly, the applied tensile strain facilitates the band-gap narrowing, demonstrating that epitaxial strain is a useful tool to tune the electronic structure of ferroelectric transition-metal oxides.

  4. Epitaxy of layered semiconductor thin films

    NASA Astrophysics Data System (ADS)

    Brahim Otsmane, L.; Emery, J. Y.; Jouanne, M.; Balkanski, M.

    1993-03-01

    Epilayers of InSe on InSe(00.1) and GaSe(00.1) have been grown by the molecular beam epitaxy (MBE) technique. Raman spectroscopy was used for a characterization of the structure and crystallinity in InSe/InSe(00.1) (homoepitaxy) and InSe/GaSe(00.1) (heteroepitaxy). The Raman spectra of the InSe thin films are identical to those of polytype γ-InSe. An activation of the E(LO) mode at 211 cm -1 is observed in these films here. Scanning electron microscopy (SEM) is also used to investigate surfaces of these films.

  5. Epitaxial superlattices of ionic conductor oxides

    NASA Astrophysics Data System (ADS)

    Orsini, A.; Medaglia, P. G.; Sanna, S.; Traversa, E.; Licoccia, S.; Tebano, A.; Balestrino, G.

    2009-07-01

    Pulsed Laser Deposition technique was used to engineer heterostructures of Yttrium-stabilized Zirconia (YSZ) and Gadolinium-doped Ceria (GDC) on perovskite substrates like Neodymium Gallate (NGO) and Strontium Titanate (STO). Epitaxial superlattices of the same number of layers of both materials were deposited with each block thickness as thin as 2 unit cells up to 30 unit cells. X-ray diffraction (XRD) investigation of the (002) symmetrical reflection allowed to evaluate the amount of material deposited in each layer constituting the superlattices. (113) asymmetrical reflections were analyzed to investigate strain effects on YSZ and GDC lattice parameters, evidencing the cube on cube growth of these films.

  6. Perspective: Oxide molecular-beam epitaxy rocks!

    SciTech Connect

    Schlom, Darrell G.

    2015-06-01

    Molecular-beam epitaxy (MBE) is the “gold standard” synthesis technique for preparing semiconductor heterostructures with high purity, high mobility, and exquisite control of layer thickness at the atomic-layer level. Its use for the growth of multicomponent oxides got off to a rocky start 30 yr ago, but in the ensuing decades, it has become the definitive method for the preparation of oxide heterostructures too, particularly when it is desired to explore their intrinsic properties. Examples illustrating the unparalleled achievements of oxide MBE are given; these motivate its expanding use for exploring the potentially revolutionary states of matter possessed by oxide systems.

  7. Interfacing epitaxial oxides to gallium nitride

    NASA Astrophysics Data System (ADS)

    Losego, Mark Daniel

    Molecular beam epitaxy (MBE) is lauded for its ability to control thin film material structures at the atomic level. This precision of control can improve performance of microelectronic devices and cultivate the development of novel device structures. This thesis explores the utility of MBE for designing interfaces between oxide epilayers and the wide band gap semiconductor gallium nitride (GaN). The allure of wide gap semiconductor microelectronics (like GaN, 3.4 eV) is their ability to operate at higher frequencies, higher powers, and higher temperatures than current semiconductor platforms. Heterostructures between ferroelectric oxides and GaN are also of interest for studying the interaction between GaN's fixed polarization and the ferroelectric's switchable polarization. Two major obstacles to successful integration of oxides with GaN are: (1) interfacial trap states; and (2) small electronic band offsets across the oxide/nitride interface due to the semiconductor's large band gap. For this thesis, epitaxial rocksalt oxide interfacial layers (˜8 eV band gap) are investigated as possible solutions to overcoming the challenges facing oxide integration with GaN. The cubic close-packed structure of rocksalt oxides forms a suitable epitaxial interface with the hexagonal close-packed wurtzite lattice of GaN. Three rocksalt oxide compounds are investigated in this thesis: MgO, CaO, and YbO. All are found to have a (111) MO || (0001) GaN; <1 10> MO || <11 20> GaN epitaxial relationship. Development of the epilayer microstructure is dominated by the high-energy polar growth surface (drives 3D nucleation) and the interfacial symmetry, which permits the formation of twin boundaries. Using STEM, strain relief for these ionicly bonded epilayers is observed to occur through disorder within the initial monolayer of growth. All rocksalt oxides demonstrate chemical stability with GaN to >1000°C. Concurrent MBE deposition of MgO and CaO is known to form complete solid

  8. Epitaxial thick film high-Tc SQUIDs

    NASA Astrophysics Data System (ADS)

    Faley, M. I.; Mi, S. B.; Jia, C. L.; Poppe, U.; Urban, K.; Fagaly, R. L.

    2008-02-01

    Low-noise operation of superconducting quantum interference devices (SQUIDs) in magnetic fields requires high critical current and strong pinning of vortices in the superconducting electrodes and in the flux transformer. Crack-free epitaxial high-Tc dc-SQUID structures with a total thickness ?5 μm and a surface roughness determined by 30 nm high growth spirals were prepared with YBa2Cu3O7-x (YBCO) films on MgO substrates buffered by a SrTiO3/BaZrO3-bilayer. HRTEM demonstrated a high quality epitaxial growth of the films. The YBCO films and SQUID structures deposited on the buffered MgO substrates had a superconducting transition temperature Tc exceeding 91 K and critical current densities Jc > 3 MA/cm2 at 77 K up to a thickness ~5 μm. The application of thicker superconducting and insulator films helped us to increase the critical current and dynamic range of the multilayer high-Tc flux transformer and improve the insulation between the superconducting layers. An optimization of SQUID inductance allowed us to fabricate 8 mm SQUID magnetometers with SQUID voltage swings of ~60 μV and a field resolution of ~30 fT/√Hz at 77 K.

  9. Graphene nanoribbons epitaxy on boron nitride

    NASA Astrophysics Data System (ADS)

    Lu, Xiaobo; Yang, Wei; Wang, Shuopei; Wu, Shuang; Chen, Peng; Zhang, Jing; Zhao, Jing; Meng, Jianling; Xie, Guibai; Wang, Duoming; Wang, Guole; Zhang, Ting Ting; Watanabe, Kenji; Taniguchi, Takashi; Yang, Rong; Shi, Dongxia; Zhang, Guangyu

    2016-03-01

    In this letter, we report a pilot study on epitaxy of monolayer graphene nanoribbons (GNRs) on hexagonal boron nitride (h-BN). We found that GNRs grow preferentially from the atomic steps of h-BN, forming in-plane heterostructures. GNRs with well-defined widths ranging from ˜15 nm to ˜150 nm can be obtained reliably. As-grown GNRs on h-BN have high quality with a carrier mobility of ˜20 000 cm2 V-1 s-1 for ˜100-nm-wide GNRs at a temperature of 1.7 K. Besides, a moiré pattern induced quasi-one-dimensional superlattice with a periodicity of ˜15 nm for GNR/h-BN was also observed, indicating zero crystallographic twisting angle between GNRs and h-BN substrate. The superlattice induced band structure modification is confirmed by our transport results. These epitaxial GNRs/h-BN with clean surfaces/interfaces and tailored widths provide an ideal platform for high-performance GNR devices.

  10. Density Functional Studies of Stoichiometric Surfaces of Orthorhombic Hybrid Perovskite CH3NH3PbI3

    DOE PAGES

    Wang, Yun; Huang, Jingsong; Sumpter, Bobby G.; ...

    2014-12-19

    Organic/inorganic hybrid perovskite materials are highly attractive for dye-sensitized solar cells as demonstrated by their rapid advances in energy conversion efficiency. In this work, the structures, energetics, and electronic properties for a range of stoichiometric surfaces of the orthorhombic perovskite CH3NH3PbI3 are theoretically studied using density functional theory. Various possible spatially and constitutionally isomeric surfaces are considered by diversifying the spatial orientations and connectivities of surface Pb-I bonds. The comparison of the surface energies for the most stable configurations identified for various surfaces shows that the stabilities of stoichiometric surfaces are mainly dictated by the coordination numbers of surface atoms,more » which are directly correlated with the numbers of broken bonds. Additionally, Coulombic interactions between I anions and organic countercations on the surface also contribute to the stabilization. Electronic properties are compared between the most stable (100) surface and the bulk phase, showing generally similar features except for the lifted band degeneracy and the enhanced bandgap energy for the surface. These studies on the stoichiometric surfaces serve as the first step toward gaining a fundamental understanding of the interfacial properties in the current structural design of perovskite based solar cells, in order to achieve further breakthroughs in solar conversion efficiencies.« less

  11. Polymorphic CoSe2 with mixed orthorhombic and cubic phases for highly efficient hydrogen evolution reaction.

    PubMed

    Zhang, Hongxiu; Yang, Bin; Wu, Xiaolin; Li, Zhongjian; Lei, Lecheng; Zhang, Xingwang

    2015-01-28

    We report polymorphic CoSe2 (p-CoSe2) with mixed orthorhombic and cubic phases as a highly active electrocatalyst toward hydrogen evolution reaction (HER). The p-CoSe2 is obtained by calcining CoSex via electrodeposition at 300 °C. The results of X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) demonstrated the crystal structure of p-CoSe2. The p-CoSe2 exhibits excellent electrocatalytic activity for HER with a low onset overpotential of -70 mV and a small Tafel slope of ∼30 mV/decade, which are basically state-of-the-art performance of earth-abundant electrocatalysts. The HER performance of p-CoSe2 was much higher than that of amorphous CoSex, cubic CoSe2, and CoSe. This study offers a competitive electrocatalyst for HER and opens up a new strategy to the synthesis of catalysts for energy conversion.

  12. Direct Formation of Large-Area 2D Nanosheets from Fluorescent Semiconducting Homopolymer with Orthorhombic Crystalline Orientation.

    PubMed

    Yang, Sanghee; Shin, Suyong; Choi, Inho; Lee, Jaeho; Choi, Tae-Lim

    2017-03-01

    Semiconducting polymers have been widely investigated due to their intriguing optoelectronic properties and their high crystallinity that provides a strong driving force for self-assembly. Although there are various reports of successful self-assembly of nanostructures using semiconducting polymers, direct in situ self-assembly of these polymers into two-dimensional (2D) nanostructures has proven difficult, despite their importance for optoelectronics applications. Here, we report the synthesis of a simple conjugated homopolymer by living cyclopolymerization of a 1,6-heptadiyne (having a fluorene moiety) and its efficient in situ formation of large-area 2D fluorescent semiconducting nanostructures. Using high-resolution imaging tools such as atomic force microscopy and transmission electron microscopy, we observed the solvent-dependent self-assembly behaviors of this homopolymer; the identical starting polymer formed 2D nanosheets with different shapes, such as rectangle, raft, and leaf, when dissolved in different solvents. Furthermore, super-resolution optical microscopy enabled the real-time imaging of the fluorescent 2D nanosheets, revealing their stable and uniform shapes, fluorescence, and solution dynamics. Notably, we propose an orthorhombic crystalline packing model to explain the direct formation of 2D nanostructures based on various diffraction patterns, providing important insight for their shape modulation during the self-assembly.

  13. Fatigue damage evolution and property degradation of a SCS-6/Ti-22Al-23Nb orthorhombic titanium aluminide composite

    SciTech Connect

    Wang, P.C.; Jeng, S.M.; Yang, J.M.; Russ, S.M.

    1996-08-01

    The fatigue damage evolution and property degradation of a SCS-6/Ti-22Al-23Nb orthorhombic titanium aluminide composite under low cycle fatigue loading at room temperature was investigated. The fatigue test was conducted under a load-controlled mode with a load ratio (R) of 0.1, a frequency of 10 Hz, and a maximum applied stress ranging from 600 to 945 MPa. The stiffness reduction as well as the evolution of microstructural damage which includes matrix crack length, matrix crack density and interfacial debonding length as a function of fatigue cycles, and applied stresses were measured. An analytical model and a computer simulation were also developed to predict the residual stiffness and the post-fatigued tensile strength as a function of microstructural damage. Finally, a steady-state crack growth model proposed by Marshall et al. was used to predict the interfacial frictional stress and the critical crack length. Correlation between the theoretical predictions and experimental results were also discussed.

  14. Analytical study of body waves in orthorhombic media and comparison with SKS-phase observations from selected stations

    NASA Astrophysics Data System (ADS)

    Löberich, Eric; Bokelmann, Götz

    2016-04-01

    Anisotropic effects of wave propagation, observed in the Earth, provide interesting applications in basic research and practice, e.g., in reservoir geophysics and other fields. Teleseismic waves often evidence upper mantle anisotropy, as created by aligned olivine grains. While each grain is associated with orthorhombic symmetry, the preferred alignment may lead to a transversely isotropic characteristic. Considering body waves passing through an anisotropic medium, a splitting of shear waves can usually be observed, since their transverse polarization leads to a separation of the two quasi-shear waves. The associated splitting-delay is generated if the related fast and slow seismic velocities differ. Most of the previous shear-wave splitting investigations were based on the common assumption of near-vertical incidence. However, the influence of increasing incidence angles, which may lead to angular dependent splitting-delay and fast polarization orientation, has been pointed out by Davis (2003). Our study investigates the occurrence of these postulated dependences on azimuth and incidence angle (distance), examining splitting observations in SKS-recordings at selected broadband stations (e.g., Djibouti and Red Lake, Ontario).

  15. Crystal Field Splitting is Limiting the Stability and Strength of Ultra-incompressible Orthorhombic Transition Metal Tetraborides

    PubMed Central

    Zhang, R. F.; Wen, X. D.; Legut, D.; Fu, Z. H.; Veprek, S.; Zurek, E.; Mao, H. K.

    2016-01-01

    The lattice stability and mechanical strengths of the supposedly superhard transition metal tetraborides (TmB4, Tm = Cr, Mn and Fe) evoked recently much attention from the scientific community due to the potential applications of these materials, as well as because of general scientific interests. In the present study, we show that the surprising stabilization of these compounds from a high symmetry to a low symmetry structure is accomplished by an in-plane rotation of the boron network, which maximizes the in-plane hybridization by crystal field splitting between d orbitals of Tm and p orbitals of B. Studies of mechanical and electronic properties of TmB4 suggest that these tetraborides cannot be intrinsically superhard. The mechanical instability is facilitated by a unique in-plane or out-of-plane weakening of the three-dimensional covalent bond network of boron along different shear deformation paths. These results shed a novel view on the origin of the stability and strength of orthorhombic TmB4, highlighting the importance of combinational analysis of a variety of parameters related to plastic deformation of the crystalline materials when attempting to design new ultra-incompressible, and potentially strong and hard solids. PMID:26976479

  16. Crystal structure and partial Ising-like magnetic ordering of orthorhombic Dy2TiO5

    DOE PAGES

    Shamblin, Jacob; Calder, Stuart; Dun, Zhiling; ...

    2016-07-12

    The structure and magnetic properties of orthorhombic Dy2TiO5 have been investigated using x-ray diffraction, neutron diffraction, and alternating current (ac)/direct current (dc) magnetic susceptibility measurements. In this paper, we report a continuous structural distortion below 100 K characterized by negative thermal expansion in the [0 1 0] direction. Neutron diffraction and magnetic susceptibility measurements revealed that two-dimensional (2D) magnetic ordering begins at 3.1 K, which is followed by a three-dimensional magnetic transition at 1.7 K. The magnetic structure has been solved through a representational analysis approach and can be indexed with the propagation vector k = [0 1/2 0]. Themore » spin structure corresponds to a coplanar model of interwoven 2D “sheets” extending in the [0 1 0] direction. The local crystal field is different for each Dy3+ ion (Dy1 and Dy2), one of which possesses strong uniaxial symmetry indicative of Ising-like magnetic ordering. In conclusion, consequently, two succeeding transitions under magnetic field are observed in the ac susceptibility, which are associated with flipping each Dy3+ spin independently.« less

  17. Stimulated Raman scattering spectroscopy and χ(3)-nonlinear lasing effects in single crystals of aragonite (orthorhombic CaCO3)

    NASA Astrophysics Data System (ADS)

    Kaminskii, A. A.; Rhee, H.; Lux, O.; Eichler, H. J.; Koltashev, V. V.; Kleinschrodt, R.; Bohatý, L.; Becker, P.

    2012-04-01

    The present work gives a brief review of the nonlinear χ(2)- and χ(3)-lasing properties of SRS-active natural crystals (minerals) known so far. This compilation complements new results of a detailed investigation of Raman induced χ(3)-effects in aragonite single crystals (orthorhombic CaCO3) under single- and dual-wavelength picosecond excitation in the UV, visible and near-IR spectral ranges. The studied effects at room and cryogenic temperatures comprise Stokes and anti-Stokes combs of almost two octaves bandwidth, THG, SFG, as well as cascaded and cross-cascaded χ(3) leftrightarrow χ(3) interactions. All recorded lasing χ(3)-components were identified and attributed to three observed SRS-promoting vibration modes ωSRS1 ≈ 1087 cm-1, ωSRS2 ≈ 152 cm-1, and ωSRS3 ≈ 205 cm-1 (at room temperature) of aragonite. Stimulated Raman scattering (SRS) investigations of minerals so far enrich the arsenal of SRS-active crystals, which can be applied to solve fundamental and applied tasks of modern laser physics and nonlinear optics.

  18. Native defects and Pr impurities in orthorhombic CaTiO3 by first-principles calculations

    NASA Astrophysics Data System (ADS)

    Zhu, Ailing; Wang, Jianchuan; Zhao, Dongdong; Du, Yong

    2011-07-01

    Formation energies of native defects and Pr impurities in orthorhombic CaTiO3 are explored using the first-principles calculations. The Ca vacancy (VCa), Ti vacancy (VTi) and Ca antisite (CaTi) are found to be energetically preferable. The Ti antisite (TiCa) and O vacancy (VO) are not energetically favorable in the wide range of Fermi level. In Pr-doped CaTiO3, Pr substituting for Ca (PrCa) is likely to form under condition A in which CaTiO3 is in equilibrium with CaO and O2. Under condition B (TiO2, CaTiO3 and O2 are in equilibrium), PrTi defect is energetically preferable depending on the Fermi levels. Several native defects and the two sites of Pr impurities in CaTiO3 are coincided with several different defects in Pr-doped CaTiO3 reported in the literature. Based on the present calculations, we can elucidate that the Ca deficiency design of the traditional formula Ca1-xVCa(x/2)PrxTiO3 is not the best for efficient red photoluminescence, which is realized via the experimental measurements.

  19. Density Functional Studies of Stoichiometric Surfaces of Orthorhombic Hybrid Perovskite CH3NH3PbI3

    SciTech Connect

    Wang, Yun; Huang, Jingsong; Sumpter, Bobby G.; Zhang, Haimin; Liu, Porun; Yang, Huagui; Zhao, Huijun

    2014-12-19

    Organic/inorganic hybrid perovskite materials are highly attractive for dye-sensitized solar cells as demonstrated by their rapid advances in energy conversion efficiency. In this work, the structures, energetics, and electronic properties for a range of stoichiometric surfaces of the orthorhombic perovskite CH3NH3PbI3 are theoretically studied using density functional theory. Various possible spatially and constitutionally isomeric surfaces are considered by diversifying the spatial orientations and connectivities of surface Pb-I bonds. The comparison of the surface energies for the most stable configurations identified for various surfaces shows that the stabilities of stoichiometric surfaces are mainly dictated by the coordination numbers of surface atoms, which are directly correlated with the numbers of broken bonds. Additionally, Coulombic interactions between I anions and organic countercations on the surface also contribute to the stabilization. Electronic properties are compared between the most stable (100) surface and the bulk phase, showing generally similar features except for the lifted band degeneracy and the enhanced bandgap energy for the surface. These studies on the stoichiometric surfaces serve as the first step toward gaining a fundamental understanding of the interfacial properties in the current structural design of perovskite based solar cells, in order to achieve further breakthroughs in solar conversion efficiencies.

  20. 2D vibrational properties of epitaxial silicene on Ag(111)

    NASA Astrophysics Data System (ADS)

    Solonenko, Dmytro; Gordan, Ovidiu D.; Le Lay, Guy; Sahin, Hasan; Cahangirov, Seymur; Zahn, Dietrich R. T.; Vogt, Patrick

    2017-03-01

    The two-dimensional silicon allotrope, silicene, could spur the development of new and original concepts in Si-based nanotechnology. Up to now silicene can only be epitaxially synthesized on a supporting substrate such as Ag(111). Even though the structural and electronic properties of these epitaxial silicene layers have been intensively studied, very little is known about its vibrational characteristics. Here, we present a detailed study of epitaxial silicene on Ag(111) using in situ Raman spectroscopy, which is one of the most extensively employed experimental techniques to characterize 2D materials, such as graphene, transition metal dichalcogenides, and black phosphorous. The vibrational fingerprint of epitaxial silicene, in contrast to all previous interpretations, is characterized by three distinct phonon modes with A and E symmetries. Both, energies and symmetries of theses modes are confirmed by ab initio theory calculations. The temperature dependent spectral evolution of these modes demonstrates unique thermal properties of epitaxial silicene and a significant electron-phonon coupling. These results unambiguously support the purely two-dimensional character of epitaxial silicene up to about 300 °C, whereupon a 2D-to-3D phase transition takes place. The detailed fingerprint of epitaxial silicene will allow us to identify it in different environments or to study its modifications.

  1. Comparison of Epitaxial Growth Techniques for III-V Layer Structures

    DTIC Science & Technology

    1992-05-22

    FOR Ill-V LAYER STRUCTURES DTIC byS ELECTE G. B. STRINGFELLOW MAY 2 819S2 A Prepared for Publication in the Proceedings of croissance de cristaux et de...epitaxial growth techniques have been used for semiconductors, including liquid phase epitaxy (LPE), chloride vapor phase epitaxy (CIVPE) using...MBE (GSMBE), organometallic MBE (OMMBE or MOMBE), and chemical beam epitaxy (CBE). II. LIQUID PHASE EPITAXY The first technique listed, LPE, was one of

  2. Droplet Epitaxy Image Contrast in Mirror Electron Microscopy

    NASA Astrophysics Data System (ADS)

    Kennedy, S. M.; Zheng, C. X.; Jesson, D. E.

    2017-01-01

    Image simulation methods are applied to interpret mirror electron microscopy (MEM) images obtained from a movie of GaAs droplet epitaxy. Cylindrical symmetry of structures grown by droplet epitaxy is assumed in the simulations which reproduce the main features of the experimental MEM image contrast, demonstrating that droplet epitaxy can be studied in real-time. It is therefore confirmed that an inner ring forms at the droplet contact line and an outer ring (or skirt) occurs outside the droplet periphery. We believe that MEM combined with image simulations will be increasingly used to study the formation and growth of quantum structures.

  3. Point defect balance in epitaxial GaSb

    SciTech Connect

    Segercrantz, N. Slotte, J.; Makkonen, I.; Kujala, J.; Tuomisto, F.; Song, Y.; Wang, S.

    2014-08-25

    Positron annihilation spectroscopy in both conventional and coincidence Doppler broadening mode is used for studying the effect of growth conditions on the point defect balance in GaSb:Bi epitaxial layers grown by molecular beam epitaxy. Positron annihilation characteristics in GaSb are also calculated using density functional theory and compared to experimental results. We conclude that while the main positron trapping defect in bulk samples is the Ga antisite, the Ga vacancy is the most prominent trap in the samples grown by molecular beam epitaxy. The results suggest that the p–type conductivity is caused by different defects in GaSb grown with different methods.

  4. Experimental Evidence for Epitaxial Silicene on Diboride Thin Films

    NASA Astrophysics Data System (ADS)

    Fleurence, Antoine; Friedlein, Rainer; Ozaki, Taisuke; Kawai, Hiroyuki; Wang, Ying; Yamada-Takamura, Yukiko

    2012-06-01

    As the Si counterpart of graphene, silicene may be defined as an at least partially sp2-hybridized, atom-thick honeycomb layer of Si that possesses π-electronic bands. Here we show that two-dimensional, epitaxial silicene forms through surface segregation on zirconium diboride thin films grown on Si wafers. A particular buckling of silicene induced by the epitaxial relationship with the diboride surface leads to a direct π-electronic band gap at the Γ point. These results demonstrate that the buckling and thus the electronic properties of silicene are modified by epitaxial strain.

  5. Multifunctional epitaxial systems on silicon substrates

    NASA Astrophysics Data System (ADS)

    Singamaneni, Srinivasa Rao; Prater, John Thomas; Narayan, Jagdish

    2016-09-01

    Multifunctional heterostructures can exhibit a wide range of functional properties, including colossal magneto-resistance, magnetocaloric, and multiferroic behavior, and can display interesting physical phenomena including spin and charge ordering and strong spin-orbit coupling. However, putting this functionality to work remains a challenge. To date, most of the work reported in the literature has dealt with heterostructures deposited onto closely lattice matched insulating substrates such as DyScO3, SrTiO3 (STO), or STO buffered Si(100) using concepts of lattice matching epitaxy (LME). However, strain in heterostructures grown by LME is typically not fully relaxed and the layers contain detrimental defects such as threading dislocations that can significantly degrade the physical properties of the films and adversely affect the device characteristics. In addition, most of the substrates are incompatible with existing CMOS-based technology, where Si (100) substrates dominate. This review discusses recent advances in the integration of multifunctional oxide and non-oxide materials onto silicon substrates. An alternative thin film growth approach, called "domain matching epitaxy," is presented which identifies approaches for minimizing lattice strain and unwanted defects in large misfit systems (7%-25% and higher). This approach broadly allows for the integration of multifunctional materials onto silicon substrates, such that sensing, computation, and response functions can be combined to produce next generation "smart" devices. In general, pulsed laser deposition has been used to epitaxially grow these materials, although the concepts developed here can be extended to other deposition techniques, as well. It will be shown that TiN and yttria-stabilized zirconia template layers provide promising platforms for the integration of new functionality into silicon-based computer chips. This review paper reports on a number of thin-film heterostructure systems that span a

  6. Epitaxial integration of nanowires in microsystems by local micrometer-scale vapor-phase epitaxy.

    PubMed

    Mølhave, Kristian; Wacaser, Brent A; Petersen, Dirch Hjorth; Wagner, Jakob B; Samuelson, Lars; Bøggild, Peter

    2008-10-01

    Free-standing epitaxially grown nanowires provide a controlled growth system and an optimal interface to the underlying substrate for advanced optical, electrical, and mechanical nanowire device connections. Nanowires can be grown by vapor-phase epitaxy (VPE) methods such as chemical vapor deposition (CVD) or metal organic VPE (MOVPE). However, VPE of semiconducting nanowires is not compatible with several microfabrication processes due to the high synthesis temperatures and issues such as cross-contamination interfering with the intended microsystem or the VPE process. By selectively heating a small microfabricated heater, growth of nanowires can be achieved locally without heating the entire microsystem, thereby reducing the compatibility problems. The first demonstration of epitaxial growth of silicon nanowires by this method is presented and shows that the microsystem can be used for rapid optimization of VPE conditions. The important issue of the cross-contamination of other parts of the microsystem caused by the local growth of nanowires is also investigated by growth of GaN near previously grown silicon nanowires. The design of the cantilever heaters makes it possible to study the grown nanowires with a transmission electron microscope without sample preparation.

  7. Low energy dislocation structures in epitaxy

    NASA Technical Reports Server (NTRS)

    Van Der Merwe, Jan H.; Woltersdorf, J.; Jesser, W. A.

    1986-01-01

    The principle of minimum energy was applied to epitaxial interfaces to show the interrelationship beteen misfit, overgrowth thickness and misfit dislocation spacing. The low energy dislocation configurations were presented for selected interfacial geometries. A review of the interfacial energy calculations was made and a critical assessment of the agreement between theory and experiment was presented. Modes of misfit accommodation were presented with emphasis on the distinction between kinetic effects and equilibrium conditions. Two-dimensional and three-dimensional overgrowths were treated together with interdiffusion-modified interfaces, and several models of interfacial structure were treated including the classical and the current models. The paper is concluded by indicating areas of needed investigation into interfacial structure.

  8. Infrared Rugates by Molecular Beam Epitaxy

    NASA Technical Reports Server (NTRS)

    Rona, M.

    1993-01-01

    Rugates are optical structures that have a sinusoidal index of refraction (harmonic gradient-index field). As their discrete high/ low index filter counterparts, they can be used as narrow rejection band filters. However, since rugates do not have abrupt interfaces, they tend to have a smaller absorption, hence deliver a higher in band reflectivity. The absence of sharp interfaces makes rugates even more desirable for high-energy narrow band reflectors. In this application, the lack of a sharp interface at the maximum internal standing wave electric field results in higher breakdown strengths. Our method involves fabricating rugates, with molecular beam epitaxy, on GaAs wafers as an Al(x)Ga(1-x)As single-crystal film.

  9. Mechanistic study of organometallic vapor phase epitaxy

    SciTech Connect

    Stringfellow, G.B.

    1990-12-31

    Only AsH{sub 3} and PH{sub 3} have been used as the group V source molecules for organometallic vapor phase epitaxy (OMVPE) of III/V semiconductors until recently, since they have been the only precursors yielding device quality materials. This paper reviews recent work on the pyrolysis of individual organometallic molecules, with emphasis on the group V sources, including: (1) the methylarsines, di- and tri-methylarsine, (2) the ethylarsines, mono-, di-, and tri-ethylarsine, and (3) the singly substituted tertiarybutyl arsine and phosphine molecules. The pyrolysis and growth reactions occurring when both group III and group V precursors are present simultaneously, i.e., the reactions occuring during OMVPE growth of several III/V semiconductors, are also briefly reviewed.

  10. Mechanistic study of organometallic vapor phase epitaxy

    SciTech Connect

    Stringfellow, G.B.

    1990-01-01

    Only AsH{sub 3} and PH{sub 3} have been used as the group V source molecules for organometallic vapor phase epitaxy (OMVPE) of III/V semiconductors until recently, since they have been the only precursors yielding device quality materials. This paper reviews recent work on the pyrolysis of individual organometallic molecules, with emphasis on the group V sources, including: (1) the methylarsines, di- and tri-methylarsine, (2) the ethylarsines, mono-, di-, and tri-ethylarsine, and (3) the singly substituted tertiarybutyl arsine and phosphine molecules. The pyrolysis and growth reactions occurring when both group III and group V precursors are present simultaneously, i.e., the reactions occuring during OMVPE growth of several III/V semiconductors, are also briefly reviewed.

  11. Metamorphic Epitaxy for Multijunction Solar Cells

    SciTech Connect

    France, Ryan M.; Dimroth, Frank; Grassman, Tyler J.; King, Richard R.

    2016-03-01

    Multijunction solar cells have proven to be capable of extremely high efficiencies by combining multiple semiconductor materials with bandgaps tuned to the solar spectrum. Reaching the optimum set of semiconductors often requires combining high-quality materials with different lattice constants into a single device, a challenge particularly suited for metamorphic epitaxy. In this article, we describe different approaches to metamorphic multijunction solar cells, including traditional upright metamorphic, state-of-the-art inverted metamorphic, and forward-looking multijunction designs on silicon. We also describe the underlying materials science of graded buffers that enables metamorphic subcells with low dislocation densities. Following nearly two decades of research, recent efforts have demonstrated high-quality lattice-mismatched multijunction solar cells with very little performance loss related to the mismatch, enabling solar-to-electric conversion efficiencies over 45%.

  12. Transport properties of epitaxial lift off films

    NASA Technical Reports Server (NTRS)

    Mena, R. A.; Schacham, S. E.; Young, P. G.; Haugland, E. J.; Alterovitz, S. A.

    1993-01-01

    Transport properties of epitaxially lifted-off (ELO) films were characterized using conductivity, Hall, and Shubnikov-de Haas measurements. A 10-15 percent increase in the 2D electron gas concentration was observed in these films as compared with adjacent conventional samples. We believe this result to be caused by a backgating effect produced by a charge build up at the interface of the ELO film and the quartz substrate. This increase results in a substantial decrease in the quantum lifetime in the ELO samples, by 17-30 percent, but without a degradation in carrier mobility. Under persistent photoconductivity, only one subband was populated in the conventional structure, while in the ELO films the population of the second subband was clearly visible. However, the increase of the second subband concentration with increasing excitation is substantially smaller than anticipated due to screening of the backgating effect.

  13. Epitaxial oxide bilayer on Pt(001) nanofacts.

    SciTech Connect

    Hennessy, D.; Komanicky, V.; Iddir, H.; Pierce, M. S.; Menzel, A.; Chang, K-C.; Barbour, A.; Zapol, P.; You, H.

    2012-01-01

    We observed an epitaxial, air-stable, partially registered (2 x 1) oxide bilayer on Pt (001) nanofacets [V. Komanicky, A. Menzel, K.-C. Chang, and H. You, J. Phys. Chem. 109, 23543 (2005)]. The bilayer is made of two half Pt layers; the top layer has four oxygen bonds and the second layer two. The positions and oxidation states of the Pt atoms are determined by analyzing crystal truncation rods and resonance scattering data. The positions of oxygen atoms are determined by density functional theory (DFT) calculations. Partial registry on the nanofacets and the absence of such registry on the extended Pt (001) surface prepared similarly are explained in DFT calculations by strain relief that can be accommodated only by nanoscale facets.

  14. Epitaxial oxide bilayer on Pt (001) nanofacets

    NASA Astrophysics Data System (ADS)

    Hennessy, Daniel; Komanicky, Vladimir; Iddir, Hakim; Pierce, Michael S.; Menzel, Andreas; Chang, Kee-Chul; Barbour, Andi; Zapol, Peter; You, Hoydoo

    2012-01-01

    We observed an epitaxial, air-stable, partially registered (2 × 1) oxide bilayer on Pt (001) nanofacets [V. Komanicky, A. Menzel, K.-C. Chang, and H. You, J. Phys. Chem. 109, 23543 (2005)]. The bilayer is made of two half Pt layers; the top layer has four oxygen bonds and the second layer two. The positions and oxidation states of the Pt atoms are determined by analyzing crystal truncation rods and resonance scattering data. The positions of oxygen atoms are determined by density functional theory (DFT) calculations. Partial registry on the nanofacets and the absence of such registry on the extended Pt (001) surface prepared similarly are explained in DFT calculations by strain relief that can be accommodated only by nanoscale facets.

  15. Shaping metal nanocrystals through epitaxial seeded growth

    SciTech Connect

    Habas, Susan E.; Lee, Hyunjoo; Radmilovic, Velimir; Somorjai,Gabor A.; Yang, Peidong

    2008-02-17

    Morphological control of nanocrystals has becomeincreasingly important, as many of their physical and chemical propertiesare highly shape-dependent. Nanocrystal shape control for both single andmultiple material systems, however, remains fairly empirical andchallenging. New methods need to be explored for the rational syntheticdesign of heterostructures with controlled morphology. Overgrowth of adifferent material on well-faceted seeds, for example, allows for the useof the defined seed morphology to control nucleation and growth of thesecondary structure. Here, we have used highly faceted cubic Pt seeds todirect the epitaxial overgrowth of a secondary metal. We demonstrate thisconcept with lattice matched Pd to produce conformal shape-controlledcore-shell particles, and then extend it to lattice mismatched Au to giveanisotropic growth. Seeding with faceted nanocrystals may havesignificant potential towards the development of shape-controlledheterostructures with defined interfaces.

  16. Friction boosted by spontaneous epitaxial rotations

    NASA Astrophysics Data System (ADS)

    Mandelli, Davide; Vanossi, Andrea; Manini, Nicola; Tosatti, Erio

    2015-03-01

    It is well known in surface science that incommensurate adsorbed monolayers undergo a spontaneous, energy-lowering epitaxial rotation from aligned to misaligned relative to a periodic substrate. We show first of all that a model 2D colloidal monolayer in an optical lattice, of recent importance as a frictional model, also develops in full equilibrium a small rotation angle, easy to detect in the Moiré pattern. The colloidal monolayer misalignment is then shown by extensive sliding simulations to increase the dynamic friction by a considerable factor over the aligned case. More generally, this example suggests that spontaneous rotations are rather ubiquitous and should not be ignored in all tribological phenomena between mismatched lattices. This work was mainly supported by the ERC Advanced Grant No. 320796-MODPHYSFRICT, and partly by SINERGIA contract CRSII2 136287, by PRIN/COFIN Contract 2010LLKJBX 004, by COST Action MP1303.

  17. Epitaxy on Substrates with Hexagonal Lattice Symmetry.

    NASA Astrophysics Data System (ADS)

    Braun, Max Willi Hermann

    A general description of epitaxy between thin films and substrates of general symmetry was developed from a model with rigid substrate and overgrowth and extended to include strain of the overgrowth. The overgrowth-substrate interaction was described by Fourier series, usually truncated, defined on the reciprocal lattice of the interface surfaces of the crystals. Energy considerations lead directly to a criterion that epitaxial configurations occur when a pair of surface reciprocal lattice vectors of the substrate and overgrowth coincide, equivalent to atomic row matching. This is analogous to the von Laue criterion and Bragg equations of diffraction theory, with a geometrical realization related to the Ewald construction. When generalized, misfit strain, the spacing, line sense and Burgers vectors of misfit dislocations and misfit verniers are obtained from the reciprocal lattices of crystals with any symmetry and misfit. The most general structures can be described with convenient unit cells by using structure factors. Homogeneous misfit strain, the interfacial atom positions after local relaxation and misfit and elastic (harmonic approximation) strain energies were obtained by direct minimization of the total interfacial energy of a large (1105 atoms), but finite, system. The local relaxation was calculated with a Finite Element formulation. Systems with fcc {111 } or bcc{ 110} overgrowths on fcc {111} or hcp{0001} substrates were studied with respect to substrate symmetry, overgrowth size and anisotropy of the overgrowth elastic constants. Configurations such as Kurdjumov-Sachs (KS), Nishiyama-Wassermann (NW) and a pseudomorphic phase (2DC) were explained, while several other higher order configurations were predicted. The inherent difference in nature between the KS and NW and their relationship to the 2DC were emphasized. Deviations from the ideal orientation of KS linked to anisotropy for systems undergoing misfit strain were discovered. Deviations were also

  18. STM Properties and Manipulation of Epitaxial Graphene

    NASA Astrophysics Data System (ADS)

    Thibado, Paul

    2014-03-01

    Epitaxial graphene grown on SiC has been identified as one of the most likely avenues to graphene-based electronics. Understanding how morphology affects electronic properties is therefore important. In our work, epitaxial graphene was grown on the polar and non-polar a-, m-, and r-crystallographic oriented surfaces of SiC, and was investigated using scanning tunneling microscopy (STM). Bunched nano-ridges ten times smaller than previously recorded were observed throughout the surface. A new STM technique called electrostatic-manipulation scanning tunneling microscopy (EM-STM) was performed to modify the morphology of the nano-ridges. By modeling the electrostatics involved in the EM-STM measurement, we estimate that a force of 5 nN and energy of 10 eV was required to alter the local interfacial bonding. At the atomic scale, STM images of Moire patterns reveal low-angle, twisted bi-layer graphene, grain boundaries, and an apparent lattice constant dilation. We will show that this dilation is due to the STM tip electrostatically dragging the graphene surface. Collaborators: P. Xu, D. Qi, M.L. Ackerman, S.D. Barber, J.K. Schoelz, and J. Thompson, Department of Physics, University of Arkansas, Fayetteville, AR, 72701, USA; V.D. Wheelr, R.L. Myers-Ward, C.R. Eddy, Jr., and D.K. Gaskill, U.S. Naval Research Laboratory, Washington, DC 20375, USA; and L.O. Nyakiti, Texas A&M University. Department of Physics, University of Arkansas, Fayetteville, AR, 72701, USA.

  19. Epitaxial CoSi2 on MOS devices

    DOEpatents

    Lim, Chong Wee; Shin, Chan Soo; Petrov, Ivan Georgiev; Greene, Joseph E.

    2005-01-25

    An Si.sub.x N.sub.y or SiO.sub.x N.sub.y liner is formed on a MOS device. Cobalt is then deposited and reacts to form an epitaxial CoSi.sub.2 layer underneath the liner. The CoSi.sub.2 layer may be formed through a solid phase epitaxy or reactive deposition epitaxy salicide process. In addition to high quality epitaxial CoSi.sub.2 layers, the liner formed during the invention can protect device portions during etching processes used to form device contacts. The liner can act as an etch stop layer to prevent excessive removal of the shallow trench isolation, and protect against excessive loss of the CoSi.sub.2 layer.

  20. Epitaxial growth of Si deposited on (100) Si

    NASA Astrophysics Data System (ADS)

    Hung, L. S.; Lau, S. S.; von Allmen, M.; Mayer, J. W.; Ullrich, B. M.; Baker, J. E.; Williams, P.; Tseng, W. F.

    1980-11-01

    Epitaxial growth of deposited amorphous Si on chemically cleaned (100) Si has been found and layer-by-layer growth occurred at rates comparable to those in self-ion-implanted-amorphous Si. There is no evidence for appreciable oxygen penetration into the deposited layer during storage in air. The critical factors in achieving epitaxial growth are fast (˜50 Å/sec) deposition of Si onto a surface cleaned with a HF dip as a last rinse before loading into the vacuum system. Channeling and transmission electron microscopy measurements indicated that the epitaxial layers are essentially defect free. Secondary-ion mass spectroscopic analysis showed about 1014 oxygen/cm2 at the amorphous/crystal interface. With either higher interfacial oxygen coverage or slow (˜2 Å/sec) deposition, epitaxial growth rates are significantly slower.

  1. Formation Of Ohmic Gold Contacts On Epitaxial GaAs

    NASA Technical Reports Server (NTRS)

    Hecht, Michael H.; Bell, L. Doug; Kaiser, William J.

    1991-01-01

    New low-temperature procedure used to deposit ohmic gold contacts on gallium arsenide epitaxial films, forming ohmic electrical contacts. Keeping wafer in vacuum until metallization prevents formation of rectifying contacts.

  2. Environmental effects on orthorhombic alloy Ti-22Al-25Nb in air between 650 and 1,000 C

    SciTech Connect

    Leyens, C. |

    1999-12-01

    The environmental behavior of an orthorhombic titanium-aluminide alloy, Ti-22Al-25Nb, was studied in dry and humid air between 650 and 1,000 C by scanning electron microscopy, energy dispersive spectroscopy, and X-ray diffraction. Microhardness measurements were performed after exposure to gage hardening due to nitrogen and oxygen ingress. The parabolic rate constant of Ti-22Al-25Nb was of the same order as conventional titanium alloys and Ti{sub 3}Al-based titanium aluminides at and below 750 C. Between 800 and 1,000 C, the oxidation resistance of Ti-22Al-25Nb was as good as {gamma}-TiAl base aluminides; however, the growth rate changed from parabolic to linear after several tens of hours at 900 and 1,000 C. The mixed oxide scale consisted of TiO{sub 2}, AlNbO{sub 4}, and Al{sub 2}O{sub 3} with TiO{sub 2} being the dominant oxide phase. Underneath the oxide scale, a nitride layer formed in the temperature range investigated and, at 1,000 C, internal oxidation was observed below this layer. In all cases, oxygen diffused deeply into the subsurface zone and caused severe embrittlement. Microhardness measurements revealed that Ti-22Al-25Nb was hardened in a zone as far as 300 {micro}m below the oxide scale when exposed to air at 900 C for 500 hr. The peak hardness depended on exposure time and reached five times the average hardness of the bulk material under the above conditions.

  3. Implementing Room-Temperature Multiferroism by Exploiting Hexagonal-Orthorhombic Morphotropic Phase Coexistence in LuFeO3 Thin Films.

    PubMed

    Song, Seungwoo; Han, Hyeon; Jang, Hyun Myung; Kim, Young Tae; Lee, Nam-Suk; Park, Chan Gyung; Kim, Jeong Rae; Noh, Tae Won; Scott, James F

    2016-09-01

    Room-temperature multiferroism in LuFeO3 (LFO) films is demonstrated by exploiting the orthorhombic-hexagonal (o-h) morphotrophic phase coexistence. The LFO film further reveals a magnetoelectric coupling effect that is not shown in single-phase (h- or o-) LFO. The observed multiferroism is attributed to the combination of sufficient polarization from h-LFO and net magnetization from o-LFO.

  4. 100-GHz Transistors from Wafer-Scale Epitaxial Graphene

    NASA Astrophysics Data System (ADS)

    Lin, Y.-M.; Dimitrakopoulos, C.; Jenkins, K. A.; Farmer, D. B.; Chiu, H.-Y.; Grill, A.; Avouris, Ph.

    2010-02-01

    The high carrier mobility of graphene has been exploited in field-effect transistors that operate at high frequencies. Transistors were fabricated on epitaxial graphene synthesized on the silicon face of a silicon carbide wafer, achieving a cutoff frequency of 100 gigahertz for a gate length of 240 nanometers. The high-frequency performance of these epitaxial graphene transistors exceeds that of state-of-the-art silicon transistors of the same gate length.

  5. Epitaxial patterning of thin-films: conventional lithographies and beyond

    NASA Astrophysics Data System (ADS)

    Zhang, Wei; Krishnan, Kannan M.

    2014-09-01

    Thin-film based novel magnetic and electronic devices have entered a new era in which the film crystallography, structural coherence, and epitaxy play important roles in determining their functional properties. The capabilities of controlling such structural and functional properties are being continuously developed by various physical deposition technologies. Epitaxial patterning strategies further allow the miniaturization of such novel devices, which incorporates thin-film components into nanoscale architectures while keeping their functional properties unmodified from their ideal single-crystal values. In the past decade, epitaxial patterning methods on the laboratory scale have been reported to meet distinct scientific inquires, in which the techniques and processes used differ from one to the other. In this review we summarize many of these pioneering endeavors in epitaxial patterning of thin-film devices that use both conventional and novel lithography techniques. These methods demonstrate epitaxial patterning for a broad range of materials (metals, oxides, and semiconductors) and cover common device length scales from micrometer to sub-hundred nanometer. Whilst we have been motivated by magnetic materials and devices, we present our outlook on developing systematic-strategies for epitaxial patterning of functional materials which will pave the road for the design, discovery and industrialization of next-generation advanced magnetic and electronic nano-devices.

  6. The Controller Synthesis of Metastable Oxides Utilizing Epitaxy and Epitaxial Stabilization

    SciTech Connect

    Schlom, Darrell

    2003-12-02

    Molecular beam epitaxy (MBE) has achieved unparalleled control in the integration of semiconductors at the nanometer. These advances were made through the use of epitaxy, epitaxial stabilization, and a combination of composition-control techniques including adsorption-controlled growth and RHEED-based composition control that we have developed, understood, and utilized for the growth of oxides. Also key was extensive characterization (utilizing RHEED, four-circle x-ray diffraction, AFM, TEM, and electrical characterization techniques) in order to study growth modes, optimize growth conditions, and probe the structural, dielectric, and ferroelectric properties of the materials grown. The materials that we have successfully engineered include titanates (PbTiO3, Bi4Ti3O12), tantalates (SrBi2Ta2O9), and niobates (SrBi2Nb2O9); layered combinations of these perovskite-related materials (Bi4Ti3O12-SrTiO3 and Bi4Ti3O12-PbTiO3 Aurivillius phases and metastable PbTiO3/SrTiO3 and BaTiO3/SrTiO3 superlattices), and new metastable phases (Srn+1TinO3n+1 Ruddlesden-Popper phases). The films were grown by reactive MBE and pulsed laser deposition (PLD). Many of these materials are either new or have been synthesized with the highest perfection ever reported. The controlled synthesis of such layered oxide heterostructures offers great potential for tailoring the superconducting, ferroelectric, and dielectric properties of these materials. These properties are important for energy technologies.

  7. Quality of epitaxial InAs nanowires controlled by catalyst size in molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Zhang, Zhi; Lu, Zhen-Yu; Chen, Ping-Ping; Xu, Hong-Yi; Guo, Ya-Nan; Liao, Zhi-Ming; Shi, Sui-Xing; Lu, Wei; Zou, Jin

    2013-08-01

    In this study, the structural quality of Au-catalyzed InAs nanowires grown by molecular beam epitaxy is investigated. Through detailed electron microscopy characterizations and analysis of binary Au-In phase diagram, it is found that defect-free InAs nanowires can be induced by smaller catalysts with a high In concentration, while comparatively larger catalysts containing less In induce defected InAs nanowires. This study indicates that the structural quality of InAs nanowires can be controlled by the size of Au catalysts when other growth conditions remain as constants.

  8. Hydride vapor phase epitaxy of aluminum nitride

    NASA Astrophysics Data System (ADS)

    Kamber, Derrick Shane

    AlN is a promising substrate material for AlGaN-based UV optoelectronic devices and high-power, high-frequency electronic devices. Since large-area bulk AlN crystals are not readily available, one approach to prepare AlN substrates is to heteroepitaxially deposit thick (e.g., 10-300+ mum) AlN layers by hydride vapor phase epitaxy. Initial efforts focused on growing AlN layers on sapphire substrates with growth rates up to 75 mum/hr. The resulting layers were colorless, smooth, and specular. Subsurface cracking, attributed to the plastic relief of tensile strain from island coalescence, was observed but did not adversely affect the surface morphology of the AlN layers. The surfaces possessed rms roughnesses as low as 0.316 nm over 5 x 5 mum2 sampling areas, but hexagonal hillock formation was observed for thick films grown at high growth rates. TEM revealed that the threading dislocation (TD) density of the films was 2 x 109 cm-2. The high TD densities for direct growth of AlN films on foreign substrates motivated the development of lateral epitaxial overgrowth approaches for defect reduction. Growth of AlN layers on patterned SiC substrates produced coalesced AlN films possessing TD densities below 8.3 x 106 cm -2 in the laterally grown wing regions, as compared to 1.8 x 109 cm-2 in the seed regions. These films, however, cracked on cooldown due to the difference in thermal expansion coefficients for AlN and SiC. To avoid this cracking, AlN layers were grown on patterned sapphire substrates. Although the films were able to be coalesced and contained few or no cracks, the TDs in these films were not confined to the seed regions. This produced a relatively uniform distribution of TDs over the surfaces of the films, with only a modest reduction in the TD density of 1 x 10 8 cm-2. Selective area growth of AlN was also pursued using Si3N4, SiO2, and Ti masks. Growth selectivity and film coalescence was observed for films grown on each masking material, but none of the

  9. Epitaxial oxidation of Ni-V biaxially textured tapes

    NASA Astrophysics Data System (ADS)

    Petrisor, T.; Boffa, V.; Celentano, G.; Ciontea, L.; Fabbri, F.; Galluzzi, V.; Gambardella, U.; Mancini, A.; Rufoloni, A.; Varesi, E.

    2002-08-01

    The epitaxial oxidation of the (0 0 1)[1 0 0] textured Ni 100- xV x tapes was studied because of the practical interest of NiO as a first buffer layer for the YBCO based coated conductors. The study revealed that the oxidation of the Ni-V alloy is rather complex, the less noble V being internally oxidized, while Ni undergoes an external oxidation. Moreover, the formation of the NiVO 3 and of Ni 7V 5O 17 compounds have negative effects on the epitaxial oxidation and on the surface morphology, as well. The role of vanadium on the epitaxial oxidation of Ni-V alloy has not been fully understood yet. The optimum conditions for the epitaxial oxidation have been found to be: 700epitaxial NiO films obtained under these conditions have a good out-of-plane and in-plane orientation, with a full-width-half-maximum of about 6.5° and 9.5°, respectively. The in-plane epitaxial relationship is [1 0 0]NiO∥[1 1 0]Ni-V. The as-obtained films have a compact and crack-free morphology, with grain sizes ranging from 30 to 300 nm. Nevertheless, the NiO films grown on (1 1 3) oriented grains or on twins are polycrystalline with a bright aspect, exhibiting a spongeous morphology. Epitaxial YBCO/CeO 2/NiO/Ni-V structures grown on the NiO template have a critical current density of about 0.6 MA/cm 2 at 77 K and zero magnetic field.

  10. Asymmetric shape transitions of epitaxial quantum dots

    NASA Astrophysics Data System (ADS)

    Wei, Chaozhen; Spencer, Brian J.

    2016-06-01

    We construct a two-dimensional continuum model to describe the energetics of shape transitions in fully faceted epitaxial quantum dots (strained islands) via minimization of elastic energy and surface energy at fixed volume. The elastic energy of the island is based on a third-order approximation, enabling us to consider shape transitions between pyramids, domes, multifaceted domes and asymmetric intermediate states. The energetics of the shape transitions are determined by numerically calculating the facet lengths that minimize the energy of a given island type of prescribed island volume. By comparing the energy of different island types with the same volume and analysing the energy surface as a function of the island shape parameters, we determine the bifurcation diagram of equilibrium solutions and their stability, as well as the lowest barrier transition pathway for the island shape as a function of increasing volume. The main result is that the shape transition from pyramid to dome to multifaceted dome occurs through sequential nucleation of facets and involves asymmetric metastable transition shapes. We also explicitly determine the effect of corner energy (facet edge energy) on shape transitions and interpret the results in terms of the relative stability of asymmetric island shapes as observed in experiment.

  11. Growth of very large InN microcrystals by molecular beam epitaxy using epitaxial lateral overgrowth

    SciTech Connect

    Kamimura, J.; Kishino, K.; Kikuchi, A.

    2015-02-28

    Very thick InN (∼40 μm) was grown by molecular beam epitaxy using the epitaxial lateral overgrowth (ELO) technique. In some regions, the ELO of InN was observed as expected, indicating an important step toward fabricating quasi-bulk InN substrates. Interestingly, most parts of the sample consist of large flat-topped microcrystals and well-faceted microstructures. This is likely due to local growth condition variations during ELO, which is supported by an experiment where ELO of InN was performed on a substrate with various stripe mask patterns. TEM characterization of a flat top InN microcrystal revealed few stacking faults and only related threading dislocations. Defect-free small faceted microcrystals were also observed. The thick InN crystals show a narrow photoluminescence spectrum with a peak at 0.679 eV and linewidth of 16.8 meV at 4 K.

  12. Applying CLIPS to control of molecular beam epitaxy processing

    NASA Technical Reports Server (NTRS)

    Rabeau, Arthur A.; Bensaoula, Abdelhak; Jamison, Keith D.; Horton, Charles; Ignatiev, Alex; Glover, John R.

    1990-01-01

    A key element of U.S. industrial competitiveness in the 1990's will be the exploitation of advanced technologies which involve low-volume, high-profit manufacturing. The demands of such manufacture limit participation to a few major entities in the U.S. and elsewhere, and offset the lower manufacturing costs of other countries which have, for example, captured much of the consumer electronics market. One such technology is thin-film epitaxy, a technology which encompasses several techniques such as Molecular Beam Epitaxy (MBE), Chemical Beam Epitaxy (CBE), and Vapor-Phase Epitaxy (VPE). Molecular Beam Epitaxy (MBE) is a technology for creating a variety of electronic and electro-optical materials. Compared to standard microelectronic production techniques (including gaseous diffusion, ion implantation, and chemical vapor deposition), MBE is much more exact, though much slower. Although newer than the standard technologies, MBE is the technology of choice for fabrication of ultraprecise materials for cutting-edge microelectronic devices and for research into the properties of new materials.

  13. A Simple Process for Synthesis of Transparent Thin Films of Molybdenum Trioxide in the Orthorhombic Phase ( α-MoO3)

    NASA Astrophysics Data System (ADS)

    Chibane, Loundja; Belkaid, Mohamed Said; Zirmi, Rachid; Moussi, Abderrahmane

    2017-04-01

    Transparent orthorhombic molybdenum trioxide (α-MoO3) thin films were prepared on glass substrates by sol-gel dip coating technique of a quality comparable to those prepared by more sophisticated techniques regarded as very costly and difficult to carry out. The prepared films were annealed in air at different temperatures in the range of 150-350°C. X-ray diffraction analysis of the films prepared at 250°C and 350°C confirmed the formation of a single-phase of MoO3 in an orthorhombic crystal system (α-MoO3). Scanning electron microscopy of the films annealed at 350°C indicated a stack of nano-layers with thickness of approximately 30 nm-40 nm. Fourier transform infrared transmittance analysis revealed the Mo=O stretching vibration, which is an indicator of the layered orthorhombic MoO3 phase. Energy dispersive x-ray analysis confirmed the existence of Mo and O in the deposited films. A maximum optical transmittance of 82% in the visible range was obtained from the films annealed at 350°C. The band gap value of the films was evaluated and it was in the range of 3.28 eV-3.40 eV. The obtained results showed that the α-MoO3 thin films prepared at 350°C exhibit good structural, chemical, and optical properties, which might be of interest to the photovoltaic and optoelectronic devices.

  14. A Simple Process for Synthesis of Transparent Thin Films of Molybdenum Trioxide in the Orthorhombic Phase (α-MoO3)

    NASA Astrophysics Data System (ADS)

    Chibane, Loundja; Belkaid, Mohamed Said; Zirmi, Rachid; Moussi, Abderrahmane

    2017-01-01

    Transparent orthorhombic molybdenum trioxide (α-MoO3) thin films were prepared on glass substrates by sol-gel dip coating technique of a quality comparable to those prepared by more sophisticated techniques regarded as very costly and difficult to carry out. The prepared films were annealed in air at different temperatures in the range of 150-350°C. X-ray diffraction analysis of the films prepared at 250°C and 350°C confirmed the formation of a single-phase of MoO3 in an orthorhombic crystal system (α-MoO3). Scanning electron microscopy of the films annealed at 350°C indicated a stack of nano-layers with thickness of approximately 30 nm-40 nm. Fourier transform infrared transmittance analysis revealed the Mo=O stretching vibration, which is an indicator of the layered orthorhombic MoO3 phase. Energy dispersive x-ray analysis confirmed the existence of Mo and O in the deposited films. A maximum optical transmittance of 82% in the visible range was obtained from the films annealed at 350°C. The band gap value of the films was evaluated and it was in the range of 3.28 eV-3.40 eV. The obtained results showed that the α-MoO3 thin films prepared at 350°C exhibit good structural, chemical, and optical properties, which might be of interest to the photovoltaic and optoelectronic devices.

  15. A neutron diffraction study of oxygen and nitrogen ordering in a kinetically stable orthorhombic iron doped titanium oxynitride

    SciTech Connect

    Wu, On Ying; Parkin, Ivan P; Hyett, Geoffrey

    2012-06-15

    The synthesis of a polycrystalline powder sample of iron doped orthorhombic titanium oxynitride, Ti{sub 2.92}Fe{sub 0.01}O{sub 4.02}N{sub 0.98}, on the scale of 0.7 g has been achieved. This was conducted by the unusual route of delamination from a steel substrate of a thin film deposited using atmospheric pressure chemical vapour deposition. The structure of the titanium oxynitride is presented, determined from a combined analysis of X-ray and neutron powder diffraction data. The use of neutron diffraction allows the position of the oxygen and nitrogen ions in the material to be reported unambiguously for the first time. In this study Ti{sub 2.92}Fe{sub 0.01}O{sub 4.02}N{sub 0.98} is found to crystallise in the Cmcm space group, iso-structural pseudobrookite, with lattice parameters a=3.81080(6) A, b=9.6253(2) A, and c=9.8859(2) A, and contains partial oxygen-nitrogen ordering. Of the three anion sites in this structure one is exclusively occupied by oxygen, while the remaining two sites are occupied by oxygen and nitrogen in a disordered manner. Testing indicates that this iron doped titanium oxynitride is a metastable phase that decomposes above 700 Degree-Sign C into TiN and TiO{sub 2}, the thermodynamic products. - Graphical abstract: We report the synthesis of Ti{sub 2.92}Fe{sub 0.01}O{sub 4.02}N{sub 0.98} deposited as a thin film using atmospheric pressure chemical vapour deposition onto stainless steel, which is then delaminated to produce a polycrystalline powder sample. This powder sample was used in a neutron diffraction experiment, and analysis of this data has allowed the position of the oxygen and nitrogen ions in the material to be reported unambiguously for the first time. Ti{sub 2.92}Fe{sub 0.01}O{sub 4.02}N{sub 0.98} is found to crystallise in the Cmcm space group iso-structural pseudobrookite and contains partial oxygen-nitrogen ordering. Highlights: Black-Right-Pointing-Pointer Partial oxygen and nitrogen ordering has been observed using neutron

  16. Electric circuit model for strained-layer epitaxy

    NASA Astrophysics Data System (ADS)

    Kujofsa, Tedi; Ayers, John E.

    2016-11-01

    For the design and analysis of a strained-layer semiconductor device structure, the equilibrium strain profile may be determined numerically by energy minimization but this method is computationally intense and non-intuitive. Here we present an electric circuit model approach for the equilibrium analysis of an epitaxial stack, in which each sublayer may be represented by an analogous configuration involving a current source, a resistor, a voltage source, and an ideal diode. The resulting node voltages in the analogous electric circuit correspond to the equilibrium strains in the original epitaxial structure. This new approach enables analysis using widely accessible circuit simulators, and an intuitive understanding of electric circuits may be translated to the relaxation of strained-layer structures. In this paper, we describe the mathematical foundation of the electrical circuit model and demonstrate its application to epitaxial layers of Si1-x Ge x grown on a Si (001) substrate.

  17. Fluoride waveguide lasers grown by liquid phase epitaxy

    NASA Astrophysics Data System (ADS)

    Starecki, Florent; Bolaños, Western; Brasse, Gurvan; Benayad, Abdelmjid; Doualan, Jean-Louis; Braud, Alain; Moncorgé, Richard; Camy, Patrice

    2013-03-01

    High optical quality rare-earth-doped LiYF4 (YLF) epitaxial layers were grown on pure YLF substrates by liquid phase epitaxy (LPE). Thulium, praseodymium and ytterbium YLF crystalline waveguides co-doped with gadolinium and/or lutetium were obtained. Spectroscopic and optical characterization of these rare-earth doped waveguides are reported. Internal propagation losses as low as 0.11 dB/cm were measured on the Tm:YLF waveguide and the overall spectroscopic characteristics of the epitaxial layers were found to be comparable to bulk crystals. Laser operation was achieved at 1.87 μm in the Tm3+ doped YLF planar waveguide with a very good efficiency of 76% with respect to the pump power. Lasing was also demonstrated in a Pr3+ doped YLF waveguide in the red and orange regions and in a Yb3+:YLF planar waveguide at 1020 nm and 994 nm.

  18. Localized States Influence Spin Transport in Epitaxial Graphene

    NASA Astrophysics Data System (ADS)

    Maassen, T.; van den Berg, J. J.; Huisman, E. H.; Dijkstra, H.; Fromm, F.; Seyller, T.; van Wees, B. J.

    2013-02-01

    We developed a spin transport model for a diffusive channel with coupled localized states that result in an effective increase of spin precession frequencies and a reduction of spin relaxation times in the system. We apply this model to Hanle spin precession measurements obtained on monolayer epitaxial graphene on SiC(0001). Combined with newly performed measurements on quasi-free-standing monolayer epitaxial graphene on SiC(0001) our analysis shows that the different values for the diffusion coefficient measured in charge and spin transport measurements on monolayer epitaxial graphene on SiC(0001) and the high values for the spin relaxation time can be explained by the influence of localized states arising from the buffer layer at the interface between the graphene and the SiC surface.

  19. Solid phase epitaxial regrowth of (001) anatase titanium dioxide

    SciTech Connect

    Barlaz, David Eitan; Seebauer, Edmund G.

    2016-03-15

    The growing interest in metal oxide based semiconductor technologies has driven the need to produce high quality epitaxial films of one metal oxide upon another. Largely unrecognized in synthetic efforts is that some metal oxides offer strongly polar surfaces and interfaces that require electrostatic stabilization to avoid a physically implausible divergence in the potential. The present work examines these issues for epitaxial growth of anatase TiO{sub 2} on strontium titanate (001). Solid phase epitaxial regrowth yields only the (001) facet, while direct crystalline growth by atomic layer deposition yields both the (112) and (001). The presence of amorphous TiO{sub 2} during regrowth may provide preferential stabilization for formation of the (001) facet.

  20. Scanning X-ray nanodiffraction from ferroelectric domains in strained K0.75Na0.25NbO3 epitaxial films grown on (110) TbScO3 1

    PubMed Central

    Schmidbauer, Martin; Kwasniewski, Albert; Braun, Dorothee; von Helden, Leonard; Feldt, Christoph; Leake, Steven John

    2017-01-01

    Scanning X-ray nanodiffraction on a highly periodic ferroelectric domain pattern of a strained K0.75Na0.25NbO3 epitaxial layer has been performed by using a focused X-ray beam of about 100 nm probe size. A 90°-rotated domain variant which is aligned along [12]TSO has been found in addition to the predominant domain variant where the domains are aligned along the [12]TSO direction of the underlying (110) TbScO3 (TSO) orthorhombic substrate. Owing to the larger elastic strain energy density, the 90°-rotated domains appear with significantly reduced probability. Furthermore, the 90°-rotated variant shows a larger vertical lattice spacing than the 0°-rotated domain variant. Calculations based on linear elasticity theory substantiate that this difference is caused by the elastic anisotropy of the K0.75Na0.25NbO3 epitaxial layer. PMID:28381975

  1. On the polarity of GaN micro- and nanowires epitaxially grown on sapphire (0001) and Si(111) substrates by metal organic vapor phase epitaxy and ammonia-molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Alloing, B.; Vézian, S.; Tottereau, O.; Vennéguès, P.; Beraudo, E.; Zuniga-Pérez, J.

    2011-01-01

    The polarity of GaN micro- and nanowires grown epitaxially by metal organic vapor phase epitaxy on sapphire substrates and by molecular-beam epitaxy, using ammonia as a nitrogen source, on sapphire and silicon substrates has been investigated. On Al2O3(0001), whatever the growth technique employed, the GaN wires show a mixture of Ga and N polarities. On Si(111), the wires grown by ammonia-molecular beam epitaxy are almost entirely Ga-polar (around 90%) and do not show inversion domains. These results can be understood in terms of the growth conditions employed during the nucleation stage.

  2. On the polarity of GaN micro- and nanowires epitaxially grown on sapphire (0001) and Si(111) substrates by metal organic vapor phase epitaxy and ammonia-molecular beam epitaxy

    SciTech Connect

    Alloing, B.; Vezian, S.; Tottereau, O.; Vennegues, P.; Beraudo, E.; Zuniga-Perez, J.

    2011-01-03

    The polarity of GaN micro- and nanowires grown epitaxially by metal organic vapor phase epitaxy on sapphire substrates and by molecular-beam epitaxy, using ammonia as a nitrogen source, on sapphire and silicon substrates has been investigated. On Al{sub 2}O{sub 3}(0001), whatever the growth technique employed, the GaN wires show a mixture of Ga and N polarities. On Si(111), the wires grown by ammonia-molecular beam epitaxy are almost entirely Ga-polar (around 90%) and do not show inversion domains. These results can be understood in terms of the growth conditions employed during the nucleation stage.

  3. Tunable interfacial properties of epitaxial graphene on metal substrates

    NASA Astrophysics Data System (ADS)

    Gao, Min; Pan, Yi; Zhang, Chendong; Hu, Hao; Yang, Rong; Lu, Hongliang; Cai, Jinming; Du, Shixuan; Liu, Feng; Gao, H.-J.

    2010-02-01

    We report on tuning interfacial properties of epitaxially-grown graphenes with different kinds of metal substrates based on scanning tunneling microscopy experiments and density functional theory calculations. Three kinds of metal substrates, Ni(111), Pt(111), and Ru(0001), show different interactions with the epitaxially grown graphene at the interfaces. The different interfacial interaction making graphene n-type and p-type doped, leads to the polarity change of the thermoelectric property of the graphene/metal systems. These findings may give further insights to the interfacial interactions in the graphene/metal systems and promote the use of graphene-based heterostructures in devices.

  4. Seed layer technique for high quality epitaxial manganite films

    PubMed Central

    Graziosi, P.; Gambardella, A.; Calbucci, M.; O’Shea, K.; MacLaren, D. A.; Bergenti, I.; Homonnay, N.; Schmidt, G.; Pullini, D.; Busquets-Mataix, D.; Dediu, V.

    2016-01-01

    We introduce an innovative approach to the simultaneous control of growth mode and magnetotransport properties of manganite thin films, based on an easy-to-implement film/substrate interface engineering. The deposition of a manganite seed layer and the optimization of the substrate temperature allows a persistent bi-dimensional epitaxy and robust ferromagnetic properties at the same time. Structural measurements confirm that in such interface-engineered films, the optimal properties are related to improved epitaxy. A new growth scenario is envisaged, compatible with a shift from heteroepitaxy towards pseudo-homoepitaxy. Relevant growth parameters such as formation energy, roughening temperature, strain profile and chemical states are derived. PMID:27648371

  5. Process for growing epitaxial gallium nitride and composite wafers

    DOEpatents

    Weber, Eicke R.; Subramanya, Sudhir G.; Kim, Yihwan; Kruger, Joachim

    2003-05-13

    A novel growth procedure to grow epitaxial Group III metal nitride thin films on lattice-mismatched substrates is proposed. Demonstrated are the quality improvement of epitaxial GaN layers using a pure metallic Ga buffer layer on c-plane sapphire substrate. X-ray rocking curve results indicate that the layers had excellent structural properties. The electron Hall mobility increases to an outstandingly high value of .mu.>400 cm.sup.2 /Vs for an electron background concentration of 4.times.10.sup.17 cm.sup.-3.

  6. Optical Probing of metamagnetic phases in epitaxial EuSe

    SciTech Connect

    Galgano, G. D.; Henriques, A. B.; Bauer, G.; Springholz, G.

    2011-12-23

    EuSe is a wide gap magnetic semiconductors with a potential for applications in proof-of-concept spintronic devices. When the temperature is lowered, EuSe goes through sharp transitions between a variety of magnetic phases and is thus described as metamagnetic. The purpose of the present investigation is to correlate the magnetic order to the sharp dichroic doublet, discovered recently in high quality thin epitaxial layers of EuSe, grown by molecular beam epitaxy. We report detailed measurements of the doublet positions and intensities as a function of magnetic field in low temperatures, covering several magnetic phases.

  7. Seed layer technique for high quality epitaxial manganite films.

    PubMed

    Graziosi, P; Gambardella, A; Calbucci, M; O'Shea, K; MacLaren, D A; Riminucci, A; Bergenti, I; Fugattini, S; Prezioso, M; Homonnay, N; Schmidt, G; Pullini, D; Busquets-Mataix, D; Dediu, V

    2016-08-01

    We introduce an innovative approach to the simultaneous control of growth mode and magnetotransport properties of manganite thin films, based on an easy-to-implement film/substrate interface engineering. The deposition of a manganite seed layer and the optimization of the substrate temperature allows a persistent bi-dimensional epitaxy and robust ferromagnetic properties at the same time. Structural measurements confirm that in such interface-engineered films, the optimal properties are related to improved epitaxy. A new growth scenario is envisaged, compatible with a shift from heteroepitaxy towards pseudo-homoepitaxy. Relevant growth parameters such as formation energy, roughening temperature, strain profile and chemical states are derived.

  8. Seed layer technique for high quality epitaxial manganite films

    NASA Astrophysics Data System (ADS)

    Graziosi, P.; Gambardella, A.; Calbucci, M.; O'Shea, K.; MacLaren, D. A.; Riminucci, A.; Bergenti, I.; Fugattini, S.; Prezioso, M.; Homonnay, N.; Schmidt, G.; Pullini, D.; Busquets-Mataix, D.; Dediu, V.

    2016-08-01

    We introduce an innovative approach to the simultaneous control of growth mode and magnetotransport properties of manganite thin films, based on an easy-to-implement film/substrate interface engineering. The deposition of a manganite seed layer and the optimization of the substrate temperature allows a persistent bi-dimensional epitaxy and robust ferromagnetic properties at the same time. Structural measurements confirm that in such interface-engineered films, the optimal properties are related to improved epitaxy. A new growth scenario is envisaged, compatible with a shift from heteroepitaxy towards pseudo-homoepitaxy. Relevant growth parameters such as formation energy, roughening temperature, strain profile and chemical states are derived.

  9. Concept of epitaxial silicon structures for edge illuminated solar cells

    NASA Astrophysics Data System (ADS)

    Sarnecki, J.; Gawlik, G.; Teodorczyk, M.; Jeremiasz, O.; Kozłowski, R.; Lipiński, D.; Krzyżak, K.; Brzozowski, A.

    2011-12-01

    A new concept of edge illuminated solar cells (EISC) based on silicon epitaxial technique has been proposed. In this kind of photovoltaic (PV) devices, sun-light illuminates directly a p-n junction through the edge of the structure which is perpendicular to junction surface. The main motivation of the presented work is preparation of a working model of an edge-illuminated silicon epitaxial solar cell sufficient to cooperation with a luminescent solar concentrator (LSC) consisted of a polymer foil doped with a luminescent material. The technological processes affecting the cell I-V characteristic and PV parameters are considered.

  10. Magnetic Nanostructures by Adaptive Twinning in Strained Epitaxial Films

    NASA Astrophysics Data System (ADS)

    Kauffmann-Weiss, Sandra; Gruner, Markus E.; Backen, Anja; Schultz, Ludwig; Entel, Peter; Fähler, Sebastian

    2011-11-01

    We exploit the intrinsic structural instability of the Fe70Pd30 magnetic shape memory alloy to obtain functional epitaxial films exhibiting a self-organized nanostructure. We demonstrate that coherent epitaxial straining by 54% is possible. The combination of thin film experiments and large-scale first-principles calculations enables us to establish a lattice relaxation mechanism, which is not expected for stable materials. We identify a low twin boundary energy compared to a high elastic energy as key prerequisite for the adaptive nanotwinning. Our approach is versatile as it allows to control both, nanostructure and intrinsic properties for ferromagnetic, ferroelastic, and ferroelectric materials.

  11. Nanocluster dynamics in fast rate epitaxy under mesoplasma condition

    NASA Astrophysics Data System (ADS)

    Chen, L. W.; Shibuta, Y.; Kambara, M.; Yoshida, T.

    2013-03-01

    The dynamics of Si nano-clusters during epitaxial growth has been investigated with molecular dynamics simulation using the Tersoff potential. Several nm sized Si cluster formed during rapid cooling was found to deform instantaneously upon impingement on a Si(1 0 0) substrate at the same time with the spontaneous ordering of the atomic structure to that of the substrate. Due to the increased fraction of high-energy atoms at the surface, smaller clusters (˜1 nm) are favorable for such a deformation even at lower temperatures. This is the advantage of loosely-bound cluster as growth precursor to attain epitaxy with reduced impact energies.

  12. Angle-resolved photoemission spectroscopy of strontium lanthanum copper oxide thin films grown by molecular-beam epitaxy

    NASA Astrophysics Data System (ADS)

    Harter, John Wallace

    Among the multitude of known cuprate material families and associated structures, the archetype is "infinite-layer" ACuO2, where perfectly square and flat CuO2 planes are separated by layers of alkaline earth atoms. The infinite-layer structure is free of magnetic rare earth ions, oxygen chains, orthorhombic distortions, incommensurate superstructures, ordered vacancies, and other complications that abound among the other material families. Furthermore, it is the only cuprate that can be made superconducting by both electron and hole doping, making it a potential platform for decoding the complex many-body interactions responsible for high-temperature superconductivity. Research on the infinite-layer compound has been severely hindered by the inability to synthesize bulk single crystals, but recent progress has led to high-quality superconducting thin film samples. Here we report in situ angle-resolved photoemission spectroscopy measurements of epitaxially-stabilized Sr1-chiLa chiCuO2 thin films grown by molecular-beam epitaxy. At low doping, the material exhibits a dispersive lower Hubbard band typical of other cuprate parent compounds. As carriers are added to the system, a continuous evolution from Mott insulator to superconducting metal is observed as a coherent low-energy band develops on top of a concomitant remnant lower Hubbard band, gradually filling in the Mott gap. For chi = 0.10, our results reveal a strong coupling between electrons and (pi,pi) anti-ferromagnetism, inducing a Fermi surface reconstruction that pushes the nodal states below the Fermi level and realizing nodeless superconductivity. Electron diffraction measurements indicate the presence of a surface reconstruction that is consistent with the polar nature of Sr1-chiLachiCuO2. Most knowledge about the electron-doped side of the cuprate phase diagram has been deduced by generalizing from a single material family, Re2-chi CechiCuO4, where robust antiferromagnetism has been observed past chi

  13. A study on the epitaxial Bi2Se3 thin film grown by vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Lin, Yen-Cheng; Chen, Yu-Sung; Lee, Chao-Chun; Wu, Jen-Kai; Lee, Hsin-Yen; Liang, Chi-Te; Chang, Yuan Huei

    2016-06-01

    We report the growth of high quality Bi2Se3 thin films on Al2O3 substrates by using chemical vapor deposition. From the atomic force microscope, x-ray diffraction and transmission electron microscope measurements we found that the films are of good crystalline quality, have two distinct domains and can be grown epitaxially on the Al2O3 substrate. Carrier concentration in the sample is found to be 1.1 × 1019 cm-3 between T = 2 K to T = 300 K, and electron mobility can reach 954 cm2/V s at T = 2 K. Weak anti-localization effect is observed in the low temperature magneto-transport measurement for the sample which indicates that the thin film has topological surface state.

  14. Difference in the luminescence properties of orthorhombic and monoclinic forms of Y{sub 2}GeO{sub 5}:Ln (Ln = Tb{sup 3+} and Dy{sup 3+})

    SciTech Connect

    Tyagi, Adish; Shah, Alpa; Sudarsan, V. Vatsa, R.K.; Jain, V.K.

    2015-04-15

    Highlights: • Improved emission colour purity with orthorhombic form of Y{sub 2}GeO{sub 5}. • Non-stationary quenching exists in orthorhombic and monoclinic forms of Y{sub 2}GeO{sub 5}:Tb. • Ion pair formation and cross relaxation quenching operating for Y{sub 2}GeO{sub 5}:Dy samples. - Abstract: The luminescence properties of Tb{sup 3+} and Dy{sup 3+} doped orthorhombic and monoclinic forms of Y{sub 2}GeO{sub 5} are significantly different. Orthorhombic Y{sub 2}GeO{sub 5} doped with Tb{sup 3+} and Dy{sup 3+} ions gives bright green and blue emission upon UV light excitation with CIE coordinates (0.25, 0.46) and (0.25, 0.24), respectively. The monoclinic Y{sub 2}GeO{sub 5} doped with these ions exhibits light green and yellowish white emissions, respectively. This has been attributed to the differences in crystallographic environments around Y{sup 3+} ions in orthorhombic and monoclinic forms of Y{sub 2}GeO{sub 5}. Quantum yield of emission for orthorhombic Y{sub 2}GeO{sub 5}:Tb (∼29%) is significantly higher than that of the monoclinic Y{sub 2}GeO{sub 5}:Tb (∼14%). Lifetime values corresponding to {sup 4}F{sub 9/2} level of Dy{sup 3+} ions in both monoclinic and orthorhombic forms of Y{sub 2}GeO{sub 5} follow an opposite trend with respect to {sup 5}D{sub 4} level of Tb{sup 3+} ions. This is attributed to difference in the concentration quenching mechanism operating for Tb{sup 3+} and Dy{sup 3+} ions.

  15. Epitaxial growth of AlN films via plasma-assisted atomic layer epitaxy

    SciTech Connect

    Nepal, N.; Qadri, S. B.; Hite, J. K.; Mahadik, N. A.; Mastro, M. A.; Eddy, C. R. Jr.

    2013-08-19

    Thin AlN layers were grown at 200–650 °C by plasma assisted atomic layer epitaxy (PA-ALE) simultaneously on Si(111), sapphire (1120), and GaN/sapphire substrates. The AlN growth on Si(111) is self-limited for trimethyaluminum (TMA) pulse of length > 0.04 s, using a 10 s purge. However, the AlN nucleation on GaN/sapphire is non-uniform and has a bimodal island size distribution for TMA pulse of ≤0.03 s. The growth rate (GR) remains almost constant for T{sub g} between 300 and 400 °C indicating ALE mode at those temperatures. The GR is increased by 20% at T{sub g} = 500 °C. Spectroscopic ellipsometry (SE) measurement shows that the ALE AlN layers grown at T{sub g} ≤ 400 °C have no clear band edge related features, however, the theoretically estimated band gap of 6.2 eV was measured for AlN grown at T{sub g} ≥ 500 °C. X-ray diffraction measurements on 37 nm thick AlN films grown at optimized growth conditions (T{sub g} = 500 °C, 10 s purge, 0.06 s TMA pulse) reveal that the ALE AlN on GaN/sapphire is (0002) oriented with rocking curve full width at the half maximum (FWHM) of 670 arc sec. Epitaxial growth of crystalline AlN layers by PA-ALE at low temperatures broadens application of the material in the technologies that require large area conformal growth at low temperatures with thickness control at the atomic scale.

  16. Orthorhombic YBaCo4O8.4 crystals as a result of saturation of hexagonal YBaCo4O7 crystals with oxygen

    NASA Astrophysics Data System (ADS)

    Podberezskaya, N. V.; Bolotina, N. B.; Komarov, V. Yu.; Kameneva, M. Yu.; Kozeeva, L. P.; Lavrov, A. N.; Smolentsev, A. I.

    2015-07-01

    Hexagonal YBaCo4O7 crystals (sp. gr. P63 mc, a h = 6.3058(4) Å, c h = 10.2442(7) Å, Z = 2) are saturated with oxygen to the YBaCo4O8.4 composition and studied by X-ray diffraction (XRD) analysis. The saturation is completed by a structural first-order phase transition to orthorhombic crystals (sp. gr. Pbc21, a o = 31.8419(2) Å, b o = 10.9239(5) Å, c o = 10.0960(5) Å, Z = 20). The connection of two lattices is expressed in terms of the action of matrix (500/120/001) on the hexagonal basis. Five structural fragments of the same type but with different degrees of order alternate along the long axis of the oxygen-saturated orthorhombic structure. The XRD data on single crystals differ from the results obtained by other researchers on ceramic samples; possible causes of these differences are discussed.

  17. A DFT+U study of the structural, electronic, magnetic, and mechanical properties of cubic and orthorhombic SmCoO3

    NASA Astrophysics Data System (ADS)

    Olsson, Emilia; Aparicio-Anglès, Xavier; de Leeuw, Nora H.

    2016-12-01

    SmCoO3 is a perovskite material that has gained attention as a potential substitute for La1-xSrxMnO3-d as a solid oxide fuel cell cathode. However, a number of properties have remained unknown due to the complexity of the material. For example, we know from experimental evidence that this perovskite exists in two different crystal structures, cubic and orthorhombic, and that the cobalt ion changes its spin state at high temperatures, leading to a semiconductor-to-metal transition. However, little is known about the precise magnetic structure that causes the metallic behavior or the spin state of the Co centers at high temperature. Here, we therefore present a systematic DFT+U study of the magnetic properties of SmCoO3 in order to determine what magnetic ordering is the one exhibited by the metallic phase at different temperatures. Similarly, mechanical properties are difficult to measure experimentally, which is why there is a lack of data for the two different phases of SmCoO3. Taking advantage of our DFT calculations, we have determined the mechanical properties from our calculated elastic constants, finding that both polymorphs exhibit similar ductility and brittleness, but that the cubic structure is harder than the orthorhombic phase.

  18. Coupled orthorhombic distortion, antiferromagnetism, and superconductivity in a single twin domain of Ba(Fe1-xCox)2 As2 (x =0.047)

    NASA Astrophysics Data System (ADS)

    Zhang, Qiang; Wang, Wenjie; Hansen, B.; Ni, N.; Bud'Ko, S. L.; Canfield, P. C.; McQueeney, R. L.; Vaknin, D.; Kim, J. W.

    2013-03-01

    The interplay between structure, magnetism, and superconductivity in single crystal Ba(Fe1-xCox)2 As2 (x =0.047) has been studied using high-resolution X-ray diffraction by monitoring charge Bragg peaks in each twin domain separately. The emergence of superconducting state is correlated with the suppression of theorthorhombic distortion around TC, exhibiting the competition between orthorhombicity and superconductivity. Above TS, the Bragg peak widths gradually broaden, possibly induced by orthorhombic (nematic) fluctuations in the paramagnetic tetragonal phase. Upon cooling, anomalies in the peak width are observed at TS and also TN indicative of strong magnetoelastic coupling. Using the capability to study individual twin domains, the peak widths in the ab-plane are found to exhibit anisotropic behavior along and perpendicular to the stripe-type AFM wave vector. In contrast, the temperature dependencies of the out-of-plane peak width showan anomaly at TN, reflecting the connection between Fe-As distance and Fe local moment. Supported by DOE Basic Energy Sciences contract no. DE-AC02-07CH11358.

  19. Bond-stretching phonon mode in stripe ordered orthorhombic Nd1.67Sr0.33NiO4.

    NASA Astrophysics Data System (ADS)

    Hücker, M.; Fukuda, T.; Gu, G. D.; Tranquada, J. M.; Baron, A. Q. R.; Hill, J. P.

    2007-03-01

    Inelastic x-ray scattering (IXS) experiments on Nd1.67Sr0.33NiO4 have been performed to study electron-phonon interactions in this charge stripe ordered nickelate. Resurgent interest in such phenomena has been triggered by recent results on the high temperature superconductors, where a kink in the electron dispersion as well as striking anomalies in high- energy optical phonon modes have been observed. A significant softening of the bond-stretching-phonon mode for Q||[100] was also observed in the tetragonal nickelate La1.69Sr0.31NiO4 with inelastic neutron scattering. Moreover, this compound shows an apparent splitting of the bond-stretching mode along the [110] direction. Here we present first IXS results for Q||[110] on the orthorhombic compound Nd1.67Sr0.33NiO4, which is characterized by domains with unidirectional stripe order. By probing different spots on the sample with different domain distribution, a weak contrast between the phonon spectra has been observed. We discuss these differences in terms of phonons propagating parallel and perpendicular to the stripe direction, as well as the anisotropic, i.e. orthorhombic, lattice structure.

  20. In-situ epitaxial growth of graphene/h-BN van der Waals heterostructures by molecular beam epitaxy.

    PubMed

    Zuo, Zheng; Xu, Zhongguang; Zheng, Renjing; Khanaki, Alireza; Zheng, Jian-Guo; Liu, Jianlin

    2015-10-07

    Van der Waals materials have received a great deal of attention for their exceptional layered structures and exotic properties, which can open up various device applications in nanoelectronics. However, in situ epitaxial growth of dissimilar van der Waals materials remains challenging. Here we demonstrate a solution for fabricating van der Waals heterostructures. Graphene/hexagonal boron nitride (h-BN) heterostructures were synthesized on cobalt substrates by using molecular beam epitaxy. Various characterizations were carried out to evaluate the heterostructures. Wafer-scale heterostructures consisting of single-layer/bilayer graphene and multilayer h-BN were achieved. The mismatch angle between graphene and h-BN is below 1°.

  1. Au impact on GaAs epitaxial growth on GaAs (111)B substrates in molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Liao, Zhi-Ming; Chen, Zhi-Gang; Lu, Zhen-Yu; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Chen, Ping-Ping; Lu, Wei; Zou, Jin

    2013-02-01

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {111}B substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {113}B faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  2. In-situ epitaxial growth of graphene/h-BN van der Waals heterostructures by molecular beam epitaxy

    PubMed Central

    Zuo, Zheng; Xu, Zhongguang; Zheng, Renjing; Khanaki, Alireza; Zheng, Jian-Guo; Liu, Jianlin

    2015-01-01

    Van der Waals materials have received a great deal of attention for their exceptional layered structures and exotic properties, which can open up various device applications in nanoelectronics. However, in situ epitaxial growth of dissimilar van der Waals materials remains challenging. Here we demonstrate a solution for fabricating van der Waals heterostructures. Graphene/hexagonal boron nitride (h-BN) heterostructures were synthesized on cobalt substrates by using molecular beam epitaxy. Various characterizations were carried out to evaluate the heterostructures. Wafer-scale heterostructures consisting of single-layer/bilayer graphene and multilayer h-BN were achieved. The mismatch angle between graphene and h-BN is below 1°. PMID:26442629

  3. Epitaxial silicide formation on recoil-implanted substrates

    SciTech Connect

    Hashimoto, Shin; Egashira, Kyoko; Tanaka, Tomoya; Etoh, Ryuji; Hata, Yoshifumi; Tung, R. T.

    2005-01-15

    An epitaxy-on-recoil-implanted-substrate (ERIS) technique is presented. A disordered surface layer, generated by forward recoil implantation of {approx}0.7-3x10{sup 15} cm{sup -2} of oxygen during Ar plasma etching of surface oxide, is shown to facilitate the subsequent epitaxial growth of {approx}25-35-nm-thick CoSi{sub 2} layers on Si(100). The dependence of the epitaxial fraction of the silicide on the recoil-implantation parameters is studied in detail. A reduction in the silicide reaction rate due to recoil-implanted oxygen is shown to be responsible for the observed epitaxial formation, similar to mechanisms previously observed for interlayer-mediated growth techniques. Oxygen is found to remain inside the fully reacted CoSi{sub 2} layer, likely in the form of oxide precipitates. The presence of these oxide precipitates, with only a minor effect on the sheet resistance of the silicide layer, has a surprisingly beneficial effect on the thermal stability of the silicide layers. The agglomeration of ERIS-grown silicide layers on polycrystalline Si is significantly suppressed, likely from a reduced diffusivity due to oxygen in the grain boundaries. The implications of the present technique for the processing of deep submicron devices are discussed.

  4. Depositing spacing layers on magnetic film with liquid phase epitaxy

    NASA Technical Reports Server (NTRS)

    Moody, J. W.; Shaw, R. W.; Sanfort, R. M.

    1975-01-01

    Liquid phase epitaxy spacing layer is compatible with systems which are hard-bubble proofed by use of second magnetic garnet film as capping layer. Composite is superior in that: circuit fabrication time is reduced; adherence is superior; visibility is better; and, good match of thermal expansion coefficients is provided.

  5. Multi Bandgap Photodetectors with Buried Epitaxial Metallic Contacts

    DTIC Science & Technology

    2014-01-09

    of bulk diffusion or bulk segregation. These highly tuneable nanocomposites show promise for direct integration into epitaxial semiconductor device...0119 Surface Mediated Tunable Self-Assembly of Single Crystal Semimetallic Rare- earth-group-V/III-V Semiconductor Nanocomposite Structures C.J... nanostructures embedded within a semiconducting matrix are of great interest for applications in plasmonics, photonic crystals, and nanoscale ohmic contacts

  6. Disordered Fermi liquid in epitaxial graphene from quantum transport measurements.

    PubMed

    Lara-Avila, Samuel; Tzalenchuk, Alexander; Kubatkin, Sergey; Yakimova, Rositza; Janssen, T J B M; Cedergren, Karin; Bergsten, Tobias; Fal'ko, Vladimir

    2011-10-14

    We have performed magnetotransport measurements on monolayer epitaxial graphene and analyzed them in the framework of the disordered Fermi liquid theory. We have separated the electron-electron and weak-localization contributions to resistivity and demonstrated the phase coherence over a micrometer length scale, setting the limit of at least 50 ps on the spin relaxation time in this material.

  7. Thermodynamic and Kinetic Aspects of III/V Epitaxy

    DTIC Science & Technology

    1992-05-22

    a applications electroniques et optiques University of Utah Dept. of Materials Science & Engineering Salt Lake City, UT 84112 May 22, 1992... microscopic strain energy. The kinetic aspects of epitaxy are by far the most complex and, consequently, the least understood. We are beginning to understand

  8. Multiperiod quantum-cascade nanoheterostructures: Epitaxy and diagnostics

    SciTech Connect

    Egorov, A. Yu. Brunkov, P. N.; Nikitina, E. V.; Pirogov, E. V.; Sobolev, M. S.; Lazarenko, A. A.; Baidakova, M. V.; Kirilenko, D. A.; Konnikov, S. G.

    2014-12-15

    Advances in the production technology of multiperiod nanoheterostructures of quantum-cascade lasers with 60 cascades by molecular-beam epitaxy (MBE) on an industrial multiple-substrate MBE machine are discussed. The results obtained in studying the nanoheterostructures of quantum-cascade lasers by transmission electron microscopy, high-resolution X-ray diffraction analysis, and photoluminescence mapping are presented.

  9. Epitaxial metal-gallium arsenide contacts via electrodeposition

    NASA Astrophysics Data System (ADS)

    Bao, Zhi Liang

    The fabrication of epitaxial metal-GaAs contacts via electrodeposition and the electrical properties of the Schottky diodes are reported in this dissertation. Epitaxial electrodeposition of copper, iron, cobalt, iron-nickel, and bismuth on GaAs was discovered to rely on three major factors: the preparation of the GaAs surface by (NH4)OH etching, the addition of (NH 4)2SO4 to the electrolytes, and the control of deposition current density. The surface preparation by (NH4)OH provides a hydrophilic surface likely due to passivation via a layer of hydroxide bonds. Ammonium sulphate inhibits oxidation of the metal cations and likely acts as a surfactant both on the metal and GaAs surfaces. Control of adatom flux, similar to vacuum deposition techniques such as molecular beam epitaxy, determined the crystallinity, varying from polycrystalline to epitaxial to dendritic for current densities from 0.01 to 1 mA/mm2. The effects of other electrodeposition conditions including pH and electrolyte temperature were also investigated. Neutral electrolytes are needed for copper, iron, nickel-iron alloy, and cobalt epitaxial deposition, while acidic solution works for bismuth deposition indicating that the control of hydrogen evolution may be important. Cobalt nanodisc formation was obtained for lower temperatures (2 - 22°C) while optimal copper, iron, and bismuth epitaxy required higher deposition temperatures, 53, 56, and 70°C, respectively. The growth is via island nucleation and coalescence. The iron films develop a small decrease in lattice constant with residual compressive stress, which is a function of temperature. This is likely due to an impurity such as oxygen. Copper and cobalt formed nanometer scale reacted interfaces with GaAs, while iron and bismuth/GaAs formed abrupt interfaces. The electrical properties of these Schottky diodes were, nevertheless, found to be close to ideal and comparable to vacuum deposited diodes. Fe and Co/GaAs diodes showed identical

  10. Growth and crystallographic characterization of molecular beam epitaxial WO3 and MoO3/WO3 thin films on sapphire substrates

    NASA Astrophysics Data System (ADS)

    Yano, Mitsuaki; Koike, Kazuto; Matsuo, Masayuki; Murayama, Takayuki; Harada, Yoshiyuki; Inaba, Katsuhiko

    2016-09-01

    Molecular beam epitaxy of tungsten trioxide (WO3) on (01 1 bar 2)-oriented (r-plane) sapphire substrates and molybdenum trioxide (MoO3) on the WO3 was studied by focusing on their crystallogrhaphic properties. Although polycrystalline monoclinic (γ-phase) WO3 films were grown at 500 °C and they became single-crystalline (0 0 1)-oriented γ-phase at 700 °C, the latter films were oxygen-deficient from stoichiometry and contained dense and deep thermal etchpits. By using a two-step growth method where only the initial 15 nm was grown at 700 °C and the rest part was grown at 500 °C, (0 0 1)-oriented γ-phase single-crystalline WO3 films with stoichiometric composition and smooth surface were obtained. On top of the 15-nm-thick WO3 initiation layer, (1 1 0)-oriented orthorhombic (α-phase) MoO3 films with smooth surface were obtained.

  11. SiGe channel deposition by batch epitaxy

    NASA Astrophysics Data System (ADS)

    Reichel, Carsten; Schoenekess, Joerg; Dietel, Andreas; Wasyluk, Joanna; Chow, Yew Tuck; Kammler, Thorsten

    2015-08-01

    Batch epitaxy has been introduced for high volume manufacturing of SiGe channels in order to reduce the cost for this epitaxial process by a factor of 3. Beside cost, SiGe channel deposition by batch epitaxy offers many benefits for manufacturing. The stability of the process and the reduced variability of the SiGe thickness greatly improve the variation of VT. The batch epitaxy process does not show a pattern loading effect for SiGe thickness reducing the complexity for manufacturing significantly. However, since the tool concept is very different to that of the widely used single wafer tools, there are some tool specific issues that need to be managed. The wafer backside is critical for batch epitaxy. A nitride backside facing the front side of the wafer results in a clear degradation of the uniformity and a change of the morphology of the SiGe channel compared to that facing a Si backside. The thermal rounding is more pronounced for the channels deposited in a batch tool for both large and narrow width devices. The device parameters of the large width device are not affected by thermal rounding but the performance of the narrow width device is clearly degraded. The thin SiGe layer at the edge of the channel driven by thermal rounding affects the VT and thus the effective device width. An in-situ etching before SiGe deposition to avoid thermal rounding was not feasible due to defects issues which were induced by the wafer backside. Finally a thermal rounding of the Si by an aggressive H2 bake before SiGe deposition improves the SiGe channel uniformity and recovers the performance degradation of the narrow width device partly.

  12. On the density of states of disordered epitaxial graphene

    SciTech Connect

    Davydov, S. Yu.

    2015-05-15

    The study is concerned with two types of disordered epitaxial graphene: (i) graphene with randomly located carbon vacancies and (ii) structurally amorphous graphene. The former type is considered in the coherent potential approximation, and for the latter type, a model of the density of states is proposed. The effects of two types of substrates, specifically, metal and semiconductor substrates are taken into account. The specific features of the density of states of epitaxial graphene at the Dirac point and the edges of the continuous spectrum are analyzed. It is shown that vacancies in epitaxial graphene formed on the metal substrate bring about logarithmic nulling of the density of states of graphene at the Dirac point and the edges of the continuous spectrum. If the Dirac point corresponds to the middle of the band gap of the semiconductor substrate, the linear trend of the density of states to zero in the vicinity of the Dirac point in defect-free graphene transforms into a logarithmic decrease in the presence of vacancies. In both cases, the graphene-substrate interaction is assumed to be weak (quasi-free graphene). In the study of amorphous epitaxial graphene, a simple model of free amorphous graphene is proposed as the initial model, in which account is taken of the nonzero density of states at the Dirac point, and then the interaction of the graphene sheet with the substrate is taken into consideration. It is shown that, near the Dirac point, the quadratic behavior of the density of states of free amorphous graphene transforms into a linear dependence for amorphous epitaxial graphene. In the study, the density of states of free graphene corresponds to the low-energy approximation of the electron spectrum.

  13. Efficient Interlayer Relaxation and Transition of Excitons in Epitaxial and Non-epitaxial MoS2/WS2 Heterostructures

    SciTech Connect

    Yu, Yifei; Hu, Shi; Su, Liqin; Huang, Lujun; Liu, Yi; Jin, Zhenghe; Puretzky, Alexander A.; Geohegan, David B.; Kim, Ki Wook; Zhang, Yong; Cao, Linyou

    2014-12-03

    Semiconductor heterostructurs provide a powerful platform for the engineering of excitons. Here we report on the excitonic properties of two-dimensional (2D) heterostructures that consist of monolayer MoS2 and WS2 stacked epitaxially or non-epitaxially in the vertical direction. We find similarly efficient interlayer relaxation and transition of excitons in both the epitaxial and non-epitaxial heterostructures. This is manifested by a two orders of magnitude decrease in the photoluminescence and an extra absorption peak at low energy region of both heterostructures. The MoS2/WS2 heterostructures show weak interlayer coupling and essentially act as an atomic-scale heterojunction with the intrinsic band structures of the two monolayers largely preserved. They are particularly promising for the applications that request efficient dissociation of excitons and strong light absorption, including photovoltaics, solar fuels, photodetectors, and optical modulators. Our results also indicate that 2D heterostructures promise to provide capabilities to engineer excitons from the atomic level without concerns of interfacial imperfection.

  14. Efficient Interlayer Relaxation and Transition of Excitons in Epitaxial and Non-epitaxial MoS2/WS2 Heterostructures

    DOE PAGES

    Yu, Yifei; Hu, Shi; Su, Liqin; ...

    2014-12-03

    Semiconductor heterostructurs provide a powerful platform for the engineering of excitons. Here we report on the excitonic properties of two-dimensional (2D) heterostructures that consist of monolayer MoS2 and WS2 stacked epitaxially or non-epitaxially in the vertical direction. We find similarly efficient interlayer relaxation and transition of excitons in both the epitaxial and non-epitaxial heterostructures. This is manifested by a two orders of magnitude decrease in the photoluminescence and an extra absorption peak at low energy region of both heterostructures. The MoS2/WS2 heterostructures show weak interlayer coupling and essentially act as an atomic-scale heterojunction with the intrinsic band structures of themore » two monolayers largely preserved. They are particularly promising for the applications that request efficient dissociation of excitons and strong light absorption, including photovoltaics, solar fuels, photodetectors, and optical modulators. Our results also indicate that 2D heterostructures promise to provide capabilities to engineer excitons from the atomic level without concerns of interfacial imperfection.« less

  15. Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth

    DOEpatents

    Forrest, Stephen R; Zimmerman, Jeramy; Lee, Kyusang; Shiu, Kuen-Ting

    2013-02-19

    There is disclosed methods of making photosensitive devices, such as flexible photovoltaic (PV) devices, through the use of epitaxial liftoff. Also described herein are methods of preparing flexible PV devices comprising a structure having a growth substrate, wherein the selective etching of protective layers yields a smooth growth substrate that us suitable for reuse.

  16. Methods of preparing flexible photovoltaic devices using epitaxial liftoff, and preserving the integrity of growth substrates used in epitaxial growth

    DOEpatents

    Forrest, Stephen R; Zimmerman, Jeramy; Lee, Kyusang; Shiu, Kuen-Ting

    2015-01-06

    There is disclosed methods of making photosensitive devices, such as flexible photovoltaic (PV) devices, through the use of epitaxial liftoff. Also described herein are methods of preparing flexible PV devices comprising a structure having a growth substrate, wherein the selective etching of protective layers yields a smooth growth substrate that us suitable for reuse.

  17. Cosine (Cobalt Silicide Growth Through Nitrogen-Induced Epitaxy) Process For Epitaxial Cobalt Silicide Formation For High Performance Sha

    DOEpatents

    Lim, Chong Wee; Shin, Chan Soo; Gall, Daniel; Petrov, Ivan Georgiev; Greene, Joseph E.

    2004-09-28

    A method for forming an epitaxial cobalt silicide layer on a MOS device includes sputter depositing cobalt in an ambient to form a first layer of cobalt suicide on a gate and source/drain regions of the MOS device. Subsequently, cobalt is sputter deposited again in an ambient of argon to increase the thickness of the cobalt silicide layer to a second thickness.

  18. Intrinsically incompatible crystal (ligand) field parameter sets for transition ions at orthorhombic and lower symmetry sites in crystals and their implications

    NASA Astrophysics Data System (ADS)

    Rudowicz, C.; Gnutek, P.

    2010-01-01

    Central quantities in spectroscopy and magnetism of transition ions in crystals are crystal (ligand) field parameters (CFPs). For orthorhombic, monoclinic, and triclinic site symmetry CF analysis is prone to misinterpretations due to large number of CFPs and existence of correlated sets of alternative CFPs. In this review, we elucidate the intrinsic features of orthorhombic and lower symmetry CFPs and their implications. The alternative CFP sets, which yield identical energy levels, belong to different regions of CF parameter space and hence are intrinsically incompatible. Only their ‘images’ representing CFP sets expressed in the same region of CF parameter space may be directly compared. Implications of these features for fitting procedures and meaning of fitted CFPs are categorized into negative: pitfalls and positive: blessings. As a case study, the CFP sets for Tm 3+ ions in KLu(WO 4) 2 are analysed and shown to be intrinsically incompatible. Inadvertent, so meaningless, comparisons of incompatible CFP sets result in various pitfalls, e.g., controversial claims about the values of CFPs obtained by other researchers as well as incorrect structural conclusions or faulty systematics of CF parameters across rare-earth ion series based on relative magnitudes of incompatible CFPs. Such pitfalls bear on interpretation of, e.g., optical spectroscopy, inelastic neutron scattering, and magnetic susceptibility data. An extensive survey of pertinent literature was carried out to assess recognition of compatibility problems. Great portion of available orthorhombic and lower symmetry CFP sets are found intrinsically incompatible, yet these problems and their implications appear barely recognized. The considerable extent and consequences of pitfalls revealed by our survey call for concerted remedial actions of researchers. A general approach based on the rhombicity ratio standardization may solve compatibility problems. Wider utilization of alternative CFP sets in the

  19. Numerical adiabatic potentials of orthorhombic Jahn-Teller effects retrieved from ultrasound attenuation experiments. Application to the SrF2:Cr crystal

    NASA Astrophysics Data System (ADS)

    Zhevstovskikh, I. V.; Bersuker, I. B.; Gudkov, V. V.; Averkiev, N. S.; Sarychev, M. N.; Zherlitsyn, S.; Yasin, S.; Shakurov, G. S.; Ulanov, V. A.; Surikov, V. T.

    2016-06-01

    A methodology is worked out to retrieve the numerical values of all the main parameters of the six-dimensional adiabatic potential energy surface (APES) of a polyatomic system with a quadratic T-term Jahn-Teller effect (JTE) from the ultrasound experiments. The method is based on a verified assumption that ultrasound attenuation and speed encounter anomalies when the direction of propagation and polarization of its wave of strain coincides with the characteristic directions of symmetry breaking in the JTE. For the SrF2:Cr crystal, employed as a basic example, we observed anomaly peaks in the temperature dependence of attenuation of ultrasound at frequencies of 50-160 MHz in the temperature interval of 40-60 K for the wave propagating along the [110] direction, for both the longitudinal and the shear modes, the latter with two polarizations along the [001] and [1 1 ¯ 0 ] axes, respectively. We show that these anomalies are due to the ultrasound relaxation by the system of non-interacting Cr2+ JT centers with orthorhombic local distortions. The interpretation of the experimental findings is based on the T2 g⊗(eg+t2 g) JTE problem including the linear and the quadratic terms of vibronic interactions in the Hamiltonian and the same-symmetry modes reduced to one interaction mode. Combining the experimental results with a theoretical analysis, we show that on the complicated six-dimensional APES of this system with three tetragonal, four trigonal, and six orthorhombic extrema points, the latter are global minima, while the former are saddle points, and we estimate numerically all the main parameters of this surface, including the linear and quadratic vibronic coupling constants, the primary force constants, the coordinates of all the extrema points and their energies, the energy barrier between the orthorhombic minima, and the tunneling splitting of the ground vibrational states. To our knowledge, such a based-on-experimental-data numerical reconstruction of the APES

  20. Effects of high source flow and high pumping speed on gas source molecular beam epitaxy / chemical beam epitaxy

    NASA Astrophysics Data System (ADS)

    McCollum, M. J.; Jackson, S. L.; Szafranek, I.; Stillman, G. E.

    1990-10-01

    We report the growth of GaAs by molecular beam epitaxy (MBE), gas source molecular beam epitaxy (GSMBE), and chemical beam epitaxy (CBE) in an epitaxial III-V reactor which features high pumping speed. The system is comprised of a modified Perkin-Elmer 430P molecular beam epitaxy system and a custom gas source panel from Emcore. The growth chamber is pumped with a 7000 1/s (He) diffusion pump (Varian VHS-10 with Monsanto Santovac 5 oil). The gas source panel includes pressure based flow controllers (MKS 1150) allowing triethylaluminum (TEA), triethylgallium (TEG), and trimethylindium (TMI) to be supplied without the use of hydrogen. All source lines, including arsine and phosphine, are maintained below atmospheric pressure. The high pumping speed allows total system flow rates as high as 100 SCCM and V/III ratios as high as 100. The purity of GaAs grown by MBE in this system increases with pumping speed. GaAs layers grown by GSMBE with arsine flows of 10 and 20 SCCM have electron concentrations of 1 × 10 15 cm -3 (μ 77=48,000 cm 2/V·) and 2 × 10 14 cm -3 (μ 77=78,000 cm 2/V·s) respectively. El ectron concentration varies with hydride injector temperature such that the minimum in electron concentration occurs for less than complete cracking. The effect of V/III ratio and the use of a metal eutectic bubbler on residual carrier concentration in GaAs grown by CBE is presented. Intentional Si and Be doping of CBE grown GaAs is demonstrated at a high growth rate of 5.4 μm/h.

  1. Triclinic and orthorhombic polymorphs of 2-iodo-4-nitroaniline: interplay of hydrogen bonds, nitro...I interactions and aromatic pi-pi-stacking interactions.

    PubMed

    McWilliam, S A; Skakle, J M; Low, J N; Wardell, J L; Garden, S J; Pinto, A C; Torres, J C; Glidewell, C

    2001-08-01

    In the triclinic polymorph of 2-iodo-4-nitroaniline, C(6)H(5)IN(2)O(2), space group P-1, the molecules are linked by paired N-H...O hydrogen bonds into C(8)[R(2)(2)(6)] chains of rings. These chains are linked into sheets by nitro...I interactions, and the sheets are pairwise linked by aromatic pi-pi-stacking interactions. In the orthorhombic polymorph, space group Pbca, the molecules are linked by single N-H...O hydrogen bonds into spiral C(8) chains; the chains are linked by nitro...O interactions into sheets, each of which is linked to its two immediate neighbours by aromatic pi-pi-stacking interactions, so producing a continuous three-dimensional structure.

  2. Single-crystal and synchrotron x-ray powder diffraction study of the one-dimensial orthorhombic polymer phase of C[sub 60}.

    SciTech Connect

    Papoular, R. J.; Toby, B. H.; Davydov, V. A.; Rakhmanina, A. V.; Dzyabchenko,, A.; Allouchi,, H.; Agafonov, V.; X-Ray Science Division; Leon Brillouin Lab.; Vereshchagin Inst. of High-Presure Physics; Karpov Inst. of Physical Chemistry; Labo. de Synthese Physco-Chimique et Therapeutique; Lab. d'Electrodynamique des Materiaux Avances

    2008-07-20

    The 1D-orthorhombic polymer phase of C{sub 60} was originally mentioned in 1995. The present work provides the first direct experimental quantitative evidences of the 1D-polymer chains, clearly seen by single-crystal diffraction. Geometrical details of the [2+2]-cycloaddition rings are compared with those of C{sub 60} dimers and 2D-polymers. Another key structural parameter is the angle of rotation {Psi} of the 1D chains about the polymerization axis. Single-crystal diffraction yields {Psi} {approx} 78{sup o}, whereas accurate synchrotron powder diffraction independently produces a similar {Psi} {approx} 73{sup o}. These values are in qualitative agreement with a former theoretical prediction ({Psi} {approx} 61{sup o}).

  3. A facile and effective strategy to synthesize orthorhombic Sr2Al6O11:Eu2+,Dy3+ with blue-green persistent luminescence

    NASA Astrophysics Data System (ADS)

    Han, Juan; Jiang, Ziqiu; Zhang, Wenyan; Hao, Lingyun; Ni, Yaru; Lu, Chunhua; Xu, Zhongzi

    2017-01-01

    Sr2Al6O11:Eu2+,Dy3+ is known as a high efficient material for generating persistent luminescence. Due to its low structural stability, it is a challenge to prepare such orthorhombic material in large scale. In this work, a facile and effective strategy was designed for the preparation of Sr2Al6O11:Eu2+,Dy3+ with high purity by combining the advantages of solid state reaction and chemical vapor deposition method. The prepared Sr2Al6O11:Eu2+,Dy3+ could effectively store the UV light energy and emit blue-green luminescence for 240 min by slow liberation of photo-excited electrons. Its blue-green afterglow was composed of two luminescent emissions which released from the Eu centers located in different crystal fields.

  4. Thermodynamic study of orthorhombic T{sup x} and tetragonal T′ lanthanum cuprate, La{sub 2}CuO{sub 4}

    SciTech Connect

    Lilova, K.I.; Hord, R.; Alff, L.; Albert, B.; Navrotsky, A.

    2013-08-15

    The enthalpies of transition among the T{sup x}, T′, and T–La{sub 2}CuO{sub 4} phases are obtained from a combination of differential scanning calorimetry, high temperature oxide melt solution calorimetry, and transposed temperature drop calorimetry. The enthalpy of transformation of T{sup x} to T is 2.32±0.07 kJ/mol and the corresponding entropy of transition is 4.38±0.13 J/(mol K). The T′ modification, with an average of 1.40 kJ/mol, is less stable in enthalpy than T{sup x} but at 0.96 kJ/mol, more stable in enthalpy than T. Although we cannot rule out a small stability field at temperatures near the T{sup x}–T transition at 530 K, T′ is most likely metastable at all temperatures. - Graphical abstract: Crystal structure of T{sup x} (orthorhombic), T′ and T (tetragonal) modifications of La{sub 2}CuO{sub 4} (left to right). The space group for orthorhombic T{sup x} is Cmce and I4/mmm for both T′ and T structures; copper cations are presented as small purple, lanthanum as large blue and oxygen as large green circles. Highlights: • The enthalpies of transition among the T{sup x} , T′, and T-La{sub 2}CuO{sub 4} phases are obtained. • The T{sup x} phase is the lowest in energy, the T′ higher and the T highest. • T′ phase is metastable at all temperatures.

  5. Simultaneous metal-insulator and antiferromagnetic transitions in orthorhombic perovskite iridate S r0.94I r0.78O2.68 single crystals

    NASA Astrophysics Data System (ADS)

    Zheng, H.; Terzic, J.; Ye, Feng; Wan, X. G.; Wang, D.; Wang, Jinchen; Wang, Xiaoping; Schlottmann, P.; Yuan, S. J.; Cao, G.

    2016-06-01

    The orthorhombic perovskite SrIr O3 is a semimetal, an intriguing exception in iridates where the strong spin-orbit interaction coupled with electron correlations tends to impose an insulating state. We report results of our investigation of bulk single-crystal S r0.94I r0.78O2.68 or Ir-deficient, orthorhombic perovskite SrIr O3 . It retains the same crystal structure as stoichiometric SrIr O3 but exhibits a sharp, simultaneous antiferromagnetic (AFM) and metal-insulator (MI) transition occurring in the basal-plane resistivity at 185 K. Above it, the basal-plane resistivity features an extended regime of almost linear temperature dependence up to 800 K but the strong electronic anisotropy renders an insulating behavior in the out-of-plane resistivity. The Hall resistivity undergoes an abrupt sign change and grows below 40 K, which along with the Sommerfeld constant of 20 mJ /mol K2 suggests a multiband effect. All results including our first-principles calculations underscore a delicacy of the paramagnetic, metallic state in SrIr O3 that is in close proximity to an AFM insulating state. The contrasting ground states in isostructural S r0.94I r0.78O2.68 and SrIr O3 illustrate a critical role of lattice distortions and Ir deficiency in rebalancing the ground state in the iridates. Finally, the concurrent AFM and MI transitions reveal a direct correlation between the magnetic transition and formation of an activation gap in the iridate, which is conspicuously absent in S r2Ir O4 .

  6. The mechanism of paramagnetic NMR relaxation produced by Mn(II): role of orthorhombic and fourth-order zero field splitting terms.

    PubMed

    Sharp, Robert

    2008-10-14

    Mn(II) is a spin-5/2 paramagnetic ion that mediates a characteristically large NMR paramagnetic relaxation enhancement (NMR-PRE) of nuclear spins in solution. In the range of high magnetic field strengths (above about 0.3 T), where the electronic Zeeman interaction provides the largest term of the electron spin Hamiltonian, NMR relaxation mechanism is well understood. In the lower field range, the physical picture is more complex because of the presence in the spin Hamiltonian of zero field splitting (ZFS) terms that are comparable to or greater than the Zeeman term. This work describes a systematic study of the relaxation mechanism in the low field range, particularly aspects involving the dependence of NMR-PRE on the orthorhombic (E) and fourth-order (a(q)(4), q=0,2,4) ZFS tensor components. It is shown that the fourfold (a(4)(4)) and twofold (a(2)(4)) fourth-order components exert large orientation-dependent influences on the NMR-PRE. Thus, fourth-order terms with magnitudes equal to only a few percent of the quadratic ZFS terms (D,E) produce large changes in the shape of the magnetic field profile of the PRE. Effects arising from the orthorhombic quadratic ZFS term (E) are much smaller than those of the fourth-order terms and can in most cases be neglected. However, effects due to a(4)(4) and a(2)(4) need to be included in simulations of low field data.

  7. Mechanistic insights on the electronic properties and electronic/atomic structure aspects in orthorhombic SrVO3 thin films: XANES-EXAFS study.

    PubMed

    Sharma, Aditya; Varshney, Mayora; Cheol Lim, Weon; Shin, Hyun-Joon; Pal Singh, Jitendra; Ok Won, Sung; Hwa Chae, Keun

    2017-03-01

    Correlations among the B-O6 octahedra distortions, existing polymorphous phases, band structures and electronic conductivities of ABO3 perovskites are matters for debate and require a deep understanding of their local atomic/electronic structures and diverse assets. In this study, to illustrate the distortion in V-O6 octahedra and its implication on the band structure and electronic properties, spectroscopic investigations on the RF-sputtering grown insulating SrVO3 thin films were employed using X-ray absorption near edge structure (XANES) and extended X-ray absorption fine structure (EXAFS). V K-edge and V L3,2-edge XANES, along with atomic multiplet calculations, have confirmed the 4+ oxidation state of V ions in the pristine and annealed SrVO3 thin films. Lower t2g/eg peak intensity ratio and smaller energy separation between t2g and eg peaks in the O K-edge XANES spectra, compared to the VO2 reference sample, have confirmed a larger V-O6 distortion in the orthorhombic SrVO3 thin films. Moreover, from the EXAFS data analysis, the local orthorhombic structure has been identified in the pristine and annealed SrVO3 thin films, compelling significant distortion in the V-O6 octahedra. Dimerization in the vanadium chains and V-V twisting, caused by V-O6 octahedra distortion, manifests a miscellaneous ligand field interaction between O 2p and V 3d orbitals and facilitates (i) a larger separation between the bonding and antibonding d‖ orbitals and (ii) an upward shift of the π* band in the band structure, leading to larger band gaps in the insulating SrVO3 thin films. Our spectroscopy results may open up new avenues for the mechanism of insulating/conducting character in other complicated perovskite materials using XANES-EXAFS.

  8. Cyclotron resonance in epitaxial Bi1-xSbx films grown by molecular-beam epitaxy

    NASA Astrophysics Data System (ADS)

    Heremans, J.; Partin, D. L.; Thrush, C. M.; Karczewski, G.; Richardson, M. S.; Furdyna, J. K.

    1993-10-01

    The far-infrared magnetotransmission of thin films of semiconducting and semimetallic Bi1-xSbx alloys grown by molecular-beam epitaxy has been measured at fixed photon energies between 2.5 and 21.4 meV in magnetic fields up to 6 T, at T=1.8 K. The samples, grown on BaF2 substrates with composition 0<=x<=22.5%, were monocrystalline, with the trigonal axis perpendicular to the surface plane. The measurements were carried out in Faraday and Voigt geometries, with the magnetic field oriented parallel to binary, bisectrix, and trigonal axes of the films. Cyclotron-resonance lines of both electrons and holes were observed. From them, we establish the composition dependence of the effective-mass tensor, of the direct L-point band gap, and of the energy overlap in the semimetallic samples. We conclude that all band-structure parameters are the same in the films as in bulk Bi1-xSbx alloys, except for the energy overlap, which is increased by 16 meV independently of composition, possibly because of the strain induced by the substrate.

  9. The effect of anharmonicity in epitaxial interfaces. I. Substrate-induced dissociation of finite epitaxial islands

    NASA Astrophysics Data System (ADS)

    Milchev, Andrey; Markov, Ivan

    1984-01-01

    The behaviour of finite epitaxial islands in the periodic field of the substrate is theoretically investigated whereby the role of anharmonicity in the interatomic forces of the deposit is examined. The harmonic potential, traditionally adopted in the model of Frank and van der Merwe, is replaced by Toda and Morse potentials and sets of difference recursion equations, governing the static properties of such a system, are derived and solved numerically. Thus a new effect of substrate-induced rupture of anharmonic chains migrating on the surface, is found. It is shown that dissociation of migrating clusters is enhanced, if: (i) The substrate potential becomes increasingly modulated, (ii) the natural misfit between deposit and substrate is decreased (in absolute value), (iii) the misfit is negative, rather than positive (with the same absolute value) and (iv) the size of the cluster increases. A relation between dislocations in the chain and rupture appears to exist, suggesting dilatons (enormously stretched interatomic bonds) as the origin for destruction. The influence of anharmonicity on the equilibrium structure of the overgrowth is considered in Part II.

  10. Surface morphological evolution of epitaxial CrN(001) layers

    SciTech Connect

    Frederick, J.R.; Gall, D.

    2005-09-01

    CrN layers, 57 and 230 nm thick, were grown on MgO(001) at T{sub s}=600-800 deg. C by ultrahigh-vacuum magnetron sputter deposition in pure N{sub 2} discharges from an oblique deposition angle {alpha}=80 deg. . Layers grown at 600 deg. C nucleate as single crystals with a cube-on-cube epitaxial relationship with the substrate. However, rough surfaces with cauliflower-type morphologies cause the nucleation of misoriented CrN grains that develop into cone-shaped grains that protrude out of the epitaxial matrix to form triangular faceted surface mounds. The surface morphology of epitaxial CrN(001) grown at 700 deg. C is characterized by dendritic ridge patterns extending along the orthogonal <110> directions superposed by square-shaped super mounds with <100> edges. The ridge patterns are attributed to a Bales-Zangwill instability while the supermounds form due to atomic shadowing which leads to the formation of epitaxial inverted pyramids that are separated from the surrounding layer by tilted nanovoids. Growth at 800 deg. C yields complete single crystals with smooth surfaces. The root-mean-square surface roughness for 230-nm-thick layers decreases from 18.8 to 9.3 to 1.1 nm as T{sub s} is raised from 600 to 700 to 800 deg. C. This steep decrease is due to a transition in the roughening mechanism from atomic shadowing to kinetic roughening. Atomic shadowing is dominant at 600 and 700 deg. C, where misoriented grains and supermounds, respectively, capture a larger fraction of the oblique deposition flux in comparison to the surrounding epitaxial matrix, resulting in a high roughening rate that is described by a power law with an exponent {beta}>0.5. In contrast, kinetic roughening controls the surface morphology for T{sub s}=800 deg. C, as well as the epitaxial fraction of the layers grown at 600 and 700 deg. C, yielding relatively smooth surfaces and {beta}{<=}0.27.

  11. TiO2 as an electrostatic template for epitaxial growth of EuO on MgO(001) by reactive molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Swartz, Adrian; Wong, Jared; Pinchuk, Igor; Kawakami, Roland

    2012-02-01

    Interfacial electrostatics play a key role in determining epitaxial quality in the heteroepitaxy of ionic rock salt materials. We investigate the initial growth modes and the role of interfacial electrostatic interactions of EuO epitaxy on MgO(001) by reactive molecular beam epitaxy. A TiO2 interfacial monolayer is employed to alleviate electrostatic interactions between the ions of the EuO and MgO to produce high quality epitaxial growth of EuO on MgO(001) with a 45 degree in plane rotation. For comparison, direct deposition of EuO on MgO, without the TiO2 layer, is discussed. A key difference of EuO epitaxy on TiO2/MgO is the ability to form EuO by substrate assisted oxidation and without the introduction of external oxygen to the interface. Such ultrathin films are shown to have bulk like magnetic properties

  12. Quantum Hall effect in epitaxial graphene with permanent magnets

    PubMed Central

    Parmentier, F. D.; Cazimajou, T.; Sekine, Y.; Hibino, H.; Irie, H.; Glattli, D. C.; Kumada, N.; Roulleau, P.

    2016-01-01

    We have observed the well-kown quantum Hall effect (QHE) in epitaxial graphene grown on silicon carbide (SiC) by using, for the first time, only commercial NdFeB permanent magnets at low temperature. The relatively large and homogeneous magnetic field generated by the magnets, together with the high quality of the epitaxial graphene films, enables the formation of well-developed quantum Hall states at Landau level filling factors v = ±2, commonly observed with superconducting electro-magnets. Furthermore, the chirality of the QHE edge channels can be changed by a top gate. These results demonstrate that basic QHE physics are experimentally accessible in graphene for a fraction of the price of conventional setups using superconducting magnets, which greatly increases the potential of the QHE in graphene for research and applications. PMID:27922114

  13. Silicon surface preparation for III-V molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Madiomanana, K.; Bahri, M.; Rodriguez, J. B.; Largeau, L.; Cerutti, L.; Mauguin, O.; Castellano, A.; Patriarche, G.; Tournié, E.

    2015-03-01

    We report on a silicon substrate preparation for III-V molecular-beam epitaxy (MBE). It combines sequences of ex situ and in situ treatments. The ex situ process is composed of cycles of HF dip and O2 plasma treatments. Ellipsometry and atomic force microscopy performed after each step during the substrate preparation reveal surface cleaning and de-oxidation. The in situ treatment consists in flash annealing the substrate in the MBE chamber prior to epitaxial growth. GaSb-based multiple quantum well heterostructures emitting at 1.55 μm were grown by MBE on Si substrates prepared by different methods. Structural characterizations using XRD and TEM coupled with photoluminescence spectroscopy demonstrates the efficiency of our preparation process. This study thus unravels a simple and reproducible protocol to prepare the Si surface prior to III-V MBE.

  14. Quantum Hall effect in epitaxial graphene with permanent magnets.

    PubMed

    Parmentier, F D; Cazimajou, T; Sekine, Y; Hibino, H; Irie, H; Glattli, D C; Kumada, N; Roulleau, P

    2016-12-06

    We have observed the well-kown quantum Hall effect (QHE) in epitaxial graphene grown on silicon carbide (SiC) by using, for the first time, only commercial NdFeB permanent magnets at low temperature. The relatively large and homogeneous magnetic field generated by the magnets, together with the high quality of the epitaxial graphene films, enables the formation of well-developed quantum Hall states at Landau level filling factors v = ±2, commonly observed with superconducting electro-magnets. Furthermore, the chirality of the QHE edge channels can be changed by a top gate. These results demonstrate that basic QHE physics are experimentally accessible in graphene for a fraction of the price of conventional setups using superconducting magnets, which greatly increases the potential of the QHE in graphene for research and applications.

  15. Anti-damping spin transfer torque through epitaxial nickel oxide

    SciTech Connect

    Moriyama, Takahiro; Nagata, Masaki; Yoshimura, Yoko; Matsuzaki, Noriko; Ono, Teruo; Takei, So; Tserkovnyak, Yaroslav; Terashima, Takahito

    2015-04-20

    We prepare the high quality epitaxial MgO(001)[100]/Pt(001)[100]/NiO(001)[100]/FeNi/SiO{sub 2} films to investigate the spin transport in the NiO antiferromagnetic insulator. The ferromagnetic resonance measurements of the FeNi under a spin current injection from the Pt by the spin Hall effect revealed the change of the ferromagnetic resonance linewidth depending on the amount of the spin current injection. The results can be interpreted that there is an angular momentum transfer through the NiO. A high efficient angular momentum transfer we observed in the epitaxial NiO can be attributed to the well-defined orientation of the antiferromagnetic moments and the spin quantization axis of the injected spin current.

  16. Nanoscale electrical properties of epitaxial Cu3Ge film

    PubMed Central

    Wu, Fan; Cai, Wei; Gao, Jia; Loo, Yueh-Lin; Yao, Nan

    2016-01-01

    Cu3Ge has been pursued as next-generation interconnection/contact material due to its high thermal stability, low bulk resistivity and diffusion barrier property. Improvements in electrical performance and structure of Cu3Ge have attracted great attention in the past decades. Despite the remarkable progress in Cu3Ge fabrication on various substrates by different deposition methods, polycrystalline films with excess Ge were frequently obtained. Moreover, the characterization of nanoscale electrical properties remains challenging. Here we show the fabrication of epitaxial Cu3Ge thin film and its nanoscale electrical properties, which are directly correlated with localized film microstructures and supported by HRTEM observations. The average resistivity and work function of epitaxial Cu3Ge thin film are measured to be 6 ± 1 μΩ cm and ~4.47 ± 0.02 eV respectively, qualifying it as a good alternative to Cu. PMID:27363582

  17. Quantum Hall effect in epitaxial graphene with permanent magnets

    NASA Astrophysics Data System (ADS)

    Parmentier, F. D.; Cazimajou, T.; Sekine, Y.; Hibino, H.; Irie, H.; Glattli, D. C.; Kumada, N.; Roulleau, P.

    2016-12-01

    We have observed the well-kown quantum Hall effect (QHE) in epitaxial graphene grown on silicon carbide (SiC) by using, for the first time, only commercial NdFeB permanent magnets at low temperature. The relatively large and homogeneous magnetic field generated by the magnets, together with the high quality of the epitaxial graphene films, enables the formation of well-developed quantum Hall states at Landau level filling factors v = ±2, commonly observed with superconducting electro-magnets. Furthermore, the chirality of the QHE edge channels can be changed by a top gate. These results demonstrate that basic QHE physics are experimentally accessible in graphene for a fraction of the price of conventional setups using superconducting magnets, which greatly increases the potential of the QHE in graphene for research and applications.

  18. Characteristics of strong ferromagnetic Josephson junctions with epitaxial barriers

    NASA Astrophysics Data System (ADS)

    Bell, C.; Loloee, R.; Burnell, G.; Blamire, M. G.

    2005-05-01

    We present the measurement of superconductor/ferromagnetic Josephson junctions, based on an epitaxial Nb bottom electrode and epitaxial Fe20Ni80 barrier. Uniform junctions have been fabricated with a barrier thicknesses in the range 2-12nm . The maximum critical current density ˜2.4±0.2×109Am-2 was found for a device with a 3-nm -thick barrier at 4.2K , corresponding to an average characteristic voltage ICRN˜16μV . The ICRN showed a nonmonotonic behavior with Fe20Ni80 thickness. The variation of the resistance of a unit area ARN , of the junctions with barrier thickness gave a Nb/Py specific interface resistance of 6.0±0.5fΩm2 and Fe20Ni80 resistivity of 174±50nΩm , consistent with other studies in polycrystalline samples.

  19. Oxidized Monolayers of Epitaxial Silicene on Ag(111)

    PubMed Central

    Johnson, Neil W.; Muir, David I.; Moewes, Alexander

    2016-01-01

    The properties of epitaxial silicene monolayers on Ag(111) at various levels of oxidation are determined through complementary density functional theory calculations and soft X-ray spectroscopy experiments. Our calculations indicate that moderate levels of oxidation do not cause a significant bandgap opening in the epitaxial silicene monolayer, suggesting that oxygen functionalization is not a viable mechanism for bandgap tuning while the silicene monolayer remains on its metallic substrate. In addition, moderate oxidation is calculated to strongly distort the hexagonal Si lattice, causing it to cluster in regions of highest oxygen adatom concentration but retain its 2D sheet structure. However, our experiments reveal that beam-induced oxidation is consistent with the formation of islands of bulk-like SiO2. Complete exposure of the monolayer to ambient conditions results in a fully oxidized sample that closely resembles bulk SiO2, of which a significant portion is completely detached from the substrate. PMID:26936144

  20. On the kinetic barriers of graphene homo-epitaxy

    SciTech Connect

    Zhang, Wei; Yu, Xinke; Xie, Ya-Hong; Cahyadi, Erica; Ratsch, Christian

    2014-12-01

    The diffusion processes and kinetic barriers of individual carbon adatoms and clusters on graphene surfaces are investigated to provide fundamental understanding of the physics governing epitaxial growth of multilayer graphene. It is found that individual carbon adatoms form bonds with the underlying graphene whereas the interaction between graphene and carbon clusters, consisting of 6 atoms or more, is very weak being van der Waals in nature. Therefore, small carbon clusters are quite mobile on the graphene surfaces and the diffusion barrier is negligibly small (∼6 meV). This suggests the feasibility of high-quality graphene epitaxial growth at very low growth temperatures with small carbon clusters (e.g., hexagons) as carbon source. We propose that the growth mode is totally different from 3-dimensional bulk materials with the surface mobility of carbon hexagons being the highest over graphene surfaces that gradually decreases with further increase in cluster size.

  1. Graphene Substrate for van der Waals Epitaxy of Layer-Structured Bismuth Antimony Telluride Thermoelectric Film.

    PubMed

    Kim, Eun Sung; Hwang, Jae-Yeol; Lee, Kyu Hyoung; Ohta, Hiromichi; Lee, Young Hee; Kim, Sung Wng

    2017-02-01

    Graphene as a substrate for the van der Waals epitaxy of 2D layered materials is utilized for the epitaxial growth of a layer-structured thermoelectric film. Van der Waals epitaxial Bi0.5 Sb1.5 Te3 film on graphene synthesized via a simple and scalable fabrication method exhibits good crystallinity and high thermoelectric transport properties comparable to single crystals.

  2. Metal-Organic Vapor Phase Epitaxial Reactor for the Deposition of Infrared Detector Materials

    DTIC Science & Technology

    2015-04-09

    2010 14-Mar-2013 Approved for Public Release; Distribution Unlimited Final Report: Metalorganic Vapor Phase Epitaxial Reactor for the Deposition of...ADDRESS (ES) U.S. Army Research Office P.O. Box 12211 Research Triangle Park, NC 27709-2211 Epitaxial reactor , MOCVD, Infrared Materials, CdTe and...Final Report: Metalorganic Vapor Phase Epitaxial Reactor for the Deposition of Infrared Detector Materials Report Title A fully automated

  3. Gradient bounds for a thin film epitaxy equation

    NASA Astrophysics Data System (ADS)

    Li, Dong; Qiao, Zhonghua; Tang, Tao

    2017-02-01

    We consider a gradient flow modeling the epitaxial growth of thin films with slope selection. The surface height profile satisfies a nonlinear diffusion equation with biharmonic dissipation. We establish optimal local and global wellposedness for initial data with critical regularity. To understand the mechanism of slope selection and the dependence on the dissipation coefficient, we exhibit several lower and upper bounds for the gradient of the solution in physical dimensions d ≤ 3.

  4. Faceted ceramic fibers, tapes or ribbons and epitaxial devices therefrom

    SciTech Connect

    Goyal, Amit

    2013-07-09

    A crystalline article includes a single-crystal ceramic fiber, tape or ribbon. The fiber, tape or ribbon has at least one crystallographic facet along its length, which is generally at least one meter long. In the case of sapphire, the facets are R-plane, M-plane, C-plane or A-plane facets. Epitaxial articles, including superconducting articles, can be formed on the fiber, tape or ribbon.

  5. Faceted ceramic fibers, tapes or ribbons and epitaxial devices therefrom

    SciTech Connect

    Goyal, Amit

    2012-07-24

    A crystalline article includes a single-crystal ceramic fiber, tape or ribbon. The fiber, tape or ribbon has at least one crystallographic facet along its length, which is generally at least one meter long. In the case of sapphire, the facets are R-plane, M-plane, C-plane or A-plane facets. Epitaxial articles, including superconducting articles, can be formed on the fiber, tape or ribbon.

  6. Measurement of magnetostriction coefficients of epitaxial garnet films.

    PubMed

    Vella-Coleiro, G P

    1979-09-01

    A technique for measuring the magnetostriction coefficients of epitaxial garnet films on 50-mm-diam wafers is described. The measurement is based on the shift of the microwave ferrimagnetic resonance produced by stressing the film, which is achieved by supporting the wafer around its circumference and reducing the atmospheric pressure on one side. A simple, nonresonant transmission microwave spectrometer which is well suited for measurements on large wafers is also described.

  7. Thermoreversible, epitaxial fcc<-->bcc transitions in block copolymer solutions.

    PubMed

    Bang, Joona; Lodge, Timothy P; Wang, Xiaohui; Brinker, Kristin L; Burghardt, Wesley R

    2002-11-18

    Uncharged block copolymer micelles display thermoreversible transitions between close-packed and bcc lattices for a range of concentration, solvent selectivity, and copolymer composition. Using small-angle x-ray scattering on shear-oriented solutions, highly aligned fcc crystals are seen to transform epitaxially to bcc crystals, with fcc/bcc orientational relationships that are well established in martensitic transformations in metals. The transition is driven by decreasing solvent selectivity with increasing temperature, inducing solvent penetration of the micellar core.

  8. Fundamental Study of Antimonide Nanostructures by Molecular Beam Epitaxy

    DTIC Science & Technology

    2016-02-04

    to conduct experimental work in molecular beam epitaxial growth of GaSb/GaAs and InSb/GaAs quantum dots (QDs) are conducted and compared with...Nanoelectronics, Quantum Nanostructures 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF ABSTRACT SAR 18. NUMBER OF PAGES 10 19a.  NAME OF...September 2014 to July 2015 being conducted at Chulalongkorn University in Thailand. Following the research work on InAs quantum dots (QDs) and quantum

  9. Robust surface states in epitaxial Bi(111) thin films

    NASA Astrophysics Data System (ADS)

    Zhu, Kai; Jin, Xiaofeng

    Bulk Bi a prototype semimetal with trivial electronic band topology. Unanticipatedly, we show the Altshuler-Aronov-Spivak and Aharonov-Bohm effects in epitaxial Bi(111) thin films. Meanwhile, we clearly identify the interaction of the top and bottom surface states via quantum tunneling by the electrical conductance and weak anti-localization measurements. These results have significantly enriched our understanding about the electronic structure of Bi, which might be helpful for clearing up some of its longstanding subtle issues.

  10. Three-dimensional lattice matching of epitaxially embedded nanoparticles

    NASA Astrophysics Data System (ADS)

    May, Brelon J.; Anderson, Peter M.; Myers, Roberto C.

    2017-02-01

    For a given degree of in-plane lattice mismatch between a two-dimensional (2D) epitaxial layer and a substrate (εIP*), there is a critical thickness above which interfacial defects form to relax the elastic strain energy. Here, we extend the 2D lattice-matching conditions to three-dimensions in order to predict the critical size beyond which epitaxially encased nanoparticles, characterized by both εIP* and out-of-plane lattice mismatch (εOP*), relax by dislocation formation. The critical particle length (Lc) at which defect formation proceeds is determined by balancing the reduction in elastic energy associated with dislocation introduction with the corresponding increase in defect energy. Our results, which use a modified Eshelby inclusion technique for an embedded, arbitrarily-faceted nanoparticle, provide new insight to the nanoepitaxy of low dimensional structures, especially quantum dots and nanoprecipitates. By engineering εIP* and εOP*, the predicted Lc for nanoparticles can be increased to well beyond the case of encapsulation in a homogenous matrix. For the case of truncated pyramidal shaped InAs, Lc 10.8 nm when fully embedded in GaAs (εIP* = εOP* = - 0.072); 16.4 nm when the particle is grown on GaAs, but capped with InSb (εIP* = - 0.072 and εOP* =+0.065); and a maximum of 18.4 nm if capped with an alloy corresponding to εOP* =+0.037. The effect, which we term "3D Poisson-stabilization" provides a means to increase the epitaxial strain tolerance in epitaxial heterostructures by tailoring εOP*.

  11. Microwave studies of weak localization and antilocalization in epitaxial graphene

    SciTech Connect

    Drabińska, Aneta; Kamińska, Maria; Wołoś, Agnieszka; Baranowski, J. M.

    2013-12-04

    A microwave detection method was applied to study weak localization and antilocalization in epitaxial graphene sheets grown on both polarities of SiC substrates. Both coherence and scattering length values were obtained. The scattering lengths were found to be smaller for graphene grown on C-face of SiC. The decoherence rate was found to depend linearly on temperature, showing the electron-electron scattering mechanism.

  12. Polydomain structures in ferroelectric and ferroelastic epitaxial films

    NASA Astrophysics Data System (ADS)

    Roytburd, Alexander L.; Ouyang, Jun; Artemev, Andrei

    2017-04-01

    A review of theoretical models, phase field modeling and experimental studies of domain structures in epitaxial films is presented. The thermodynamic theory of such domain structures is presented within the macroscopic thermo-mechanical framework. The theory allows for the evaluation of the main parameters of the domain structure using the energy minimization approach applied to the energy of elastic interactions. For homophase (polytwin) films, the thermodynamic theory provides a quantitative tool that can be used to estimate domain fractions in the film and the type of domain structure architecture. For heterophase films, the theory describes (a) the conditions under which two-phase structures can be obtained in epitaxial films, and (b) the phase and domain fractions in these films. The thermodynamic theory can also be used to describe the extrinsic contributions from domain structures to the functional properties of epitaxial ferroelectric films. The review of phase field modeling demonstrates that computational results reproduce the predictions of the thermodynamic theory. It is also shown that the phase field modeling that utilizes the energy minimization procedure for elastic and interfacial energies can be used to predict domain morphology for the films with two-phase structures produced either by phase transformation or through the co-deposition of immiscible phases. The experimental data presented in the review validate predictions of the thermodynamic model and the results of phase field modeling.

  13. Terahertz and mid-infrared reflectance of epitaxial graphene

    PubMed Central

    Santos, Cristiane N.; Joucken, Frédéric; De Sousa Meneses, Domingos; Echegut, Patrick; Campos-Delgado, Jessica; Louette, Pierre; Raskin, Jean-Pierre; Hackens, Benoit

    2016-01-01

    Graphene has emerged as a promising material for infrared (IR) photodetectors and plasmonics. In this context, wafer scale epitaxial graphene on SiC is of great interest in a variety of applications in optics and nanoelectronics. Here we present IR reflectance spectroscopy of graphene grown epitaxially on the C-face of 6H-SiC over a broad optical range, from terahertz (THz) to mid-infrared (MIR). Contrary to the transmittance, reflectance measurements are not hampered by the transmission window of the substrate, and in particular by the SiC Reststrahlen band in the MIR. This allows us to present IR reflectance data exhibiting a continuous evolution from the regime of intraband to interband charge carrier transitions. A consistent and simultaneous analysis of the contributions from both transitions to the optical response yields precise information on the carrier dynamics and the number of layers. The properties of the graphene layers derived from IR reflection spectroscopy are corroborated by other techniques (micro-Raman and X-ray photoelectron spectroscopies, transport measurements). Moreover, we also present MIR microscopy mapping, showing that spatially-resolved information can be gathered, giving indications on the sample homogeneity. Our work paves the way for a still scarcely explored field of epitaxial graphene-based THz and MIR optical devices. PMID:27102827

  14. Compliant substrate epitaxy: Au on MoS2

    NASA Astrophysics Data System (ADS)

    Zhou, Yuzhi; Kiriya, Daisuke; Haller, E. E.; Ager, Joel W.; Javey, Ali; Chrzan, D. C.

    2016-02-01

    A theory for the epitaxial growth of Au on MoS2 is developed and analyzed. The theory combines continuum linear elasticity theory with density functional theory to analyze epitaxial growth in this system. It is demonstrated that if one accounts for interfacial energies and strains, the presence of misfit dislocations, and the compliance of the MoS2 substrate, the experimentally observed growth orientation is favored despite the fact that it represents a larger elastic mismatch than two competing structures. The stability of the experimentally preferred orientation is attributed to the formation of a large number of strong Au-S bonds, and it is noted that this strong bond may serve as a means to exfoliate and transfer large single layers sheets of MoS2, as well as to engineer strain within single layers of MoS2. The potential for using a van der Waals-bonded layered material as a compliant substrate for applications in 2D electronic devices and epitaxial thin film growth is discussed.

  15. Ultrafast transient reflectance of epitaxial semiconducting perovskite thin films

    NASA Astrophysics Data System (ADS)

    Smolin, S. Y.; Scafetta, M. D.; Guglietta, G. W.; Baxter, J. B.; May, S. J.

    2014-07-01

    Ultrafast pump-probe transient reflectance (TR) spectroscopy was used to study carrier dynamics in an epitaxial perovskite oxide thin film of LaFeO3 (LFO) with a thickness of 40 unit cells (16 nm) grown by molecular beam epitaxy on (LaAlO3)0.3(Sr2AlTaO6)0.7 (LSAT). TR spectroscopy shows two negative transients in reflectance with local maxima at ˜2.5 eV and ˜3.5 eV which correspond to two optical transitions in LFO as determined by ellipsometry. The kinetics at these transients were best fit with an exponential decay model with fast (5-40 ps), medium (˜200 ps), and slow (˜ 3 ns) components that we attribute mainly to recombination of photoexcited carriers. Moreover, these reflectance transients did not completely decay within the observable time window, indicating that ˜10% of photoexcited carriers exist for at least 3 ns. This work illustrates that TR spectroscopy can be performed on thin (<20 nm) epitaxial oxide films to provide a quantitative understanding of recombination lifetimes, which are important parameters for the potential utilization of perovskite films in photovoltaic and photocatalytic applications.

  16. Identifying potential BO2 oxide polymorphs for epitaxial growth candidates.

    PubMed

    Mehta, Prateek; Salvador, Paul A; Kitchin, John R

    2014-03-12

    Transition metal dioxides (BO2) exhibit a number of polymorphic structures with distinct properties, but the isolation of different polymorphs for a given composition is carried out using trial and error experimentation. We present computational studies of the relative stabilities and equations of state for six polymorphs (anatase, brookite, rutile, columbite, pyrite, and fluorite) of five different BO2 dioxides (B = Ti, V, Ru, Ir, and Sn). These properties were computed in a consistent fashion using several exchange correlation functionals within the density functional theory formalism, and the effects of the different functionals are discussed relative to their impact on predictive synthesis. We compare the computational results to prior observations of high-pressure synthesis and epitaxial film growth and then use this discussion to predict new accessible polymorphs in the context of epitaxial stabilization using isostructural substrates. For example, the relative stabilities of the columbite polymorph for VO2 and RuO2 are similar to those of TiO2 and SnO2, the latter two of which have been previously stabilized as epitaxial films.

  17. Epitaxial nucleation of CVD bilayer graphene on copper.

    PubMed

    Song, Yenan; Zhuang, Jianing; Song, Meng; Yin, Shaoqian; Cheng, Yu; Zhang, Xuewei; Wang, Miao; Xiang, Rong; Xia, Yang; Maruyama, Shigeo; Zhao, Pei; Ding, Feng; Wang, Hongtao

    2016-12-08

    Bilayer graphene (BLG) has emerged as a promising candidate for next-generation electronic applications, especially when it exists in the Bernal-stacked form, but its large-scale production remains a challenge. Here we present an experimental and first-principles calculation study of the epitaxial chemical vapor deposition (CVD) nucleation process for Bernal-stacked BLG growth on Cu using ethanol as a precursor. Results show that a carefully adjusted flow rate of ethanol can yield a uniform BLG film with a surface coverage of nearly 90% and a Bernal-stacking ratio of nearly 100% on ordinary flat Cu substrates, and its epitaxial nucleation of the second layer is mainly due to the active CH3 radicals with the presence of a monolayer-graphene-covered Cu surface. We believe that this nucleation mechanism will help clarify the formation of BLG by the epitaxial CVD process, and lead to many new strategies for scalable synthesis of graphene with more controllable structures and numbers of layers.

  18. Process for depositing an oxide epitaxially onto a silicon substrate and structures prepared with the process

    DOEpatents

    McKee, Rodney A.; Walker, Frederick J.

    1993-01-01

    A process and structure involving a silicon substrate utilizes an ultra high vacuum and molecular beam epitaxy (MBE) methods to grow an epitaxial oxide film upon a surface of the substrate. As the film is grown, the lattice of the compound formed at the silicon interface becomes stabilized, and a base layer comprised of an oxide having a sodium chloride-type lattice structure grows epitaxially upon the compound so as to cover the substrate surface. A perovskite may then be grown epitaxially upon the base layer to render a product which incorporates silicon, with its electronic capabilities, with a perovskite having technologically-significant properties of its own.

  19. Au impact on GaAs epitaxial growth on GaAs (111){sub B} substrates in molecular beam epitaxy

    SciTech Connect

    Liao, Zhi-Ming; Chen, Zhi-Gang; Xu, Hong-Yi; Guo, Ya-Nan; Sun, Wen; Zhang, Zhi; Yang, Lei; Lu, Zhen-Yu; Chen, Ping-Ping; Lu, Wei; Zou, Jin

    2013-02-11

    GaAs growth behaviour under the presence of Au nanoparticles on GaAs {l_brace}111{r_brace}{sub B} substrate is investigated using electron microscopy. It has been found that, during annealing, enhanced Ga surface diffusion towards Au nanoparticles leads to the GaAs epitaxial growth into {l_brace}113{r_brace}{sub B} faceted triangular pyramids under Au nanoparticles, governed by the thermodynamic growth, while during conventional GaAs growth, growth kinetics dominates, resulting in the flatted triangular pyramids at high temperature and the epitaxial nanowires growth at relatively low temperature. This study provides an insight of Au nanoparticle impact on GaAs growth, which is critical for understanding the formation mechanisms of semiconductor nanowires.

  20. New orthorhombic derivative of CaCu5-type structure: RNi4Si compounds (R=Y, La, Ce, Sm, Gd-Ho), crystal structure and some magnetic properties

    NASA Astrophysics Data System (ADS)

    Morozkin, A. V.; Knotko, A. V.; Yapaskurt, V. O.; Yuan, Fang; Mozharivskyj, Y.; Nirmala, R.

    2013-12-01

    The crystal structure of new YNi4Si-type RNi4Si (R=Y, La, Ce, Sm, Gd-Ho) compounds has been established using powder X-ray diffraction. The YNi4Si structure is a new structure type, which is orthorhombic derivative of CaCu5-type structure (space group Cmmm N 65, oC12).

  1. Raman spectra of epitaxial graphene on SiC and of epitaxial graphene transferred to SiO2.

    PubMed

    Lee, Dong Su; Riedl, Christian; Krauss, Benjamin; von Klitzing, Klaus; Starke, Ulrich; Smet, Jurgen H

    2008-12-01

    Raman spectra were measured for mono-, bi-, and trilayer graphene grown on SiC by solid state graphitization, whereby the number of layers was preassigned by angle-resolved ultraviolet photoemission spectroscopy. It was found that the only unambiguous fingerprint in Raman spectroscopy to identify the number of layers for graphene on SiC(0001) is the line width of the 2D (or D*) peak. The Raman spectra of epitaxial graphene show significant differences as compared to micromechanically cleaved graphene obtained from highly oriented pyrolytic graphite crystals. The G peak is found to be blue-shifted. The 2D peak does not exhibit any obvious shoulder structures, but it is much broader and almost resembles a single-peak even for multilayers. Flakes of epitaxial graphene were transferred from SiC onto SiO2 for further Raman studies. A comparison of the Raman data obtained for graphene on SiC with data for epitaxial graphene transferred to SiO2 reveals that the G peak blue-shift is clearly due to the SiC substrate. The broadened 2D peak however stems from the graphene structure itself and not from the substrate.

  2. Growth of GaN epitaxial films on polycrystalline diamond by metal-organic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Jiang, Quanzhong; Allsopp, Duncan W. E.; Bowen, Chris R.

    2017-04-01

    Heat extraction is often essential in ensuring efficient performance of semiconductor devices and requires minimising the thermal resistance between the functional semiconductor layers and any heat sink. This paper reports the epitaxial growth of N-polar GaN films on polycrystalline diamond substrates of high thermal conductivity with metal-organic vapor phase epitaxy, by using a Si x C layer formed during deposition of polycrystalline diamond on a silicon substrate. The Si x C layer acts to provide the necessary structure ordering information for the formation of a single crystal GaN film at the wafer scale. It is shown that a three-dimensional island (3D) growth process removes hexagonal defects that are induced by the non-single crystal nature of the Si x C layer. It is also shown that intensive 3D growth and the introduction of a convex curvature of the substrate can be deployed to reduce tensile stress in the GaN epitaxy to enable the growth of a crack-free layer up to a thickness of 1.1µm. The twist and tilt can be as low as 0.65° and 0.39° respectively, values broadly comparable with GaN grown on Si substrates with a similar structure.

  3. Dislocations limited electronic transport in hydride vapour phase epitaxy grown GaN templates: A word of caution for the epitaxial growers

    SciTech Connect

    Chatterjee, Abhishek Khamari, Shailesh K.; Kumar, R.; Dixit, V. K.; Oak, S. M.; Sharma, T. K.

    2015-01-12

    GaN templates grown by hydride vapour phase epitaxy (HVPE) and metal organic vapour phase epitaxy (MOVPE) techniques are compared through electronic transport measurements. Carrier concentration measured by Hall technique is about two orders larger than the values estimated by capacitance voltage method for HVPE templates. It is learnt that there exists a critical thickness of HVPE templates below which the transport properties of epitaxial layers grown on top of them are going to be severely limited by the density of charged dislocations lying at layer-substrate interface. On the contrary MOVPE grown templates are found to be free from such limitations.

  4. Crystal chemistry of the orthorhombic Ln{sub 2}TiO{sub 5} compounds with Ln=La, Pr, Nd, Sm, Gd, Tb and Dy

    SciTech Connect

    Aughterson, Robert D.; Lumpkin, Gregory R.; Thorogood, Gordon J.; Zhang, Zhaoming; Gault, Baptiste; Cairney, Julie M.

    2015-07-15

    The crystal structures of seven samples of orthorhombic (Pnma) Ln{sub 2}TiO{sub 5} compounds with Ln=La, Pr, Nd, Sm, Gd, Tb and Dy were refined by Rietveld analysis of synchrotron X-ray powder diffraction (S-XRD) data. With increasing size of the lanthanide cation, the lattice parameters increase systematically: c by only ~1.5% whereas both a and b by ~6% from Dy{sub 2}TiO{sub 5} to La{sub 2}TiO{sub 5}. The mean Ti–O bond length only increases by ~1% with increasing radius of the Ln cation from Gd to La, primarily due to expansion of the pair of Ti–O{sub 3} bonds to opposite corners of the Ti–O{sub 5} square based pyramid polyhedra. For Dy{sub 2}TiO{sub 5} and Tb{sub 2}TiO{sub 5}, a significant variation in Ti–O{sub 1} and Ti–O{sub 4} bond lengths results in an increased deformation of the Ti–O{sub 5} base. The particular configuration consists of large rhombic shaped tunnels and smaller triangular tunnels along the b axis, which have implications for defect formation and migration caused by radiation damage or the ionic conductivity. - Graphical abstract: Figure: The crystallographic study of a systematic series of compounds with nominal stoichiometry Ln{sub 2}TiO{sub 5} (with Ln representing La, Pr, Nd, Sm, Gd, Tb and Dy) and orthorhombic, Pnma, symmetry shows changes in cell parameters which fit a linear trend. However, bond lengths are shown to deviate from trend with compounds containing the smaller, heavier lanthanides. - Highlights: • First fabrication and crystallographic refinement of compound Pr{sub 2}TiO{sub 5}. • First systematic study of the crystallography, using S-XRD, for Ln{sub 2}TiO{sub 5} series. • Cation to anion bonding trends and valence states are investigated. • The densities and band-gaps of the series are experimentally determined.

  5. Epitaxial ternary nitride thin films prepared by a chemical solution method

    SciTech Connect

    Luo, Hongmei; Feldmann, David M; Wang, Haiyan; Bi, Zhenxing

    2008-01-01

    It is indispensable to use thin films for many technological applications. This is the first report of epitaxial growth of ternary nitride AMN2 films. Epitaxial tetragonal SrTiN2 films have been successfully prepared by a chemical solution approach, polymer-assisted deposition. The structural, electrical, and optical properties of the films are also investigated.

  6. Growth of (111) GaAs on (111) Si using molecular-beam epitaxy

    NASA Technical Reports Server (NTRS)

    Radhakrishnan, G.; Liu, J.; Grunthaner, F.; Katz, J.; Morkoc, H.

    1988-01-01

    (111) GaAs layers have been grown epitaxially on (111) Si wafers, both on-axis as well as 3-deg off-axis towards the 1 -1 0 direction, using molecular-beam epitaxy. The grown layers have been characterized by scanning electron microscopy, X-ray diffraction, and transmission electron microscopy.

  7. Schottky barrier detection devices having a 4H-SiC n-type epitaxial layer

    SciTech Connect

    Mandal, Krishna C.; Terry, J. Russell

    2016-12-06

    A detection device, along with methods of its manufacture and use, is provided. The detection device can include: a SiC substrate defining a substrate surface cut from planar to about 12.degree.; a buffer epitaxial layer on the substrate surface; a n-type epitaxial layer on the buffer epitaxial layer; and a top contact on the n-type epitaxial layer. The buffer epitaxial layer can include a n-type 4H--SiC epitaxial layer doped at a concentration of about 1.times.10.sup.15 cm.sup.-3 to about 5.times.10.sup.18 cm.sup.-3 with nitrogen, boron, aluminum, or a mixture thereof. The n-type epitaxial layer can include a n-type 4H--SiC epitaxial layer doped at a concentration of about 1.times.10.sup.13 cm.sup.-3 to about 5.times.10.sup.15 cm.sup.-3 with nitrogen. The top contact can have a thickness of about 8 nm to about 15 nm.

  8. Epitaxy and fiber texture of Pb films on mica and glass.

    NASA Technical Reports Server (NTRS)

    Wyatt, P. W.; Yelon, A.

    1972-01-01

    We report the production of (111) epitaxial Pb films on mica and (111) textured Pb films on mica and glass. Film structure is studied by reflection electron diffraction and by etching and optical microscopy. Thin (about 1000 A) epitaxial films are found to be doubly positioned. Reorientation during growth of thicker films leads to single positioning in areas several tenths of a millimeter across.

  9. Rapid low-temperature epitaxial growth using a hot-element assisted chemical vapor deposition process

    DOEpatents

    Iwancizko, Eugene; Jones, Kim M.; Crandall, Richard S.; Nelson, Brent P.; Mahan, Archie Harvin

    2001-01-01

    The invention provides a process for depositing an epitaxial layer on a crystalline substrate, comprising the steps of providing a chamber having an element capable of heating, introducing the substrate into the chamber, heating the element at a temperature sufficient to decompose a source gas, passing the source gas in contact with the element; and forming an epitaxial layer on the substrate.

  10. Evaluation and verification of epitaxial process sequence for silicon solar cell production

    NASA Technical Reports Server (NTRS)

    Redfield, D.

    1981-01-01

    The applicability of solar cell and module processing sequences, to be used on lower cost epitaxial silicon wafers was evaluated. The extent to which the process sequences perform effectively when applied to film solar cells formed by epitaxial deposition of Si on potentially inexpensive substrates of upgraded metallurgical grade Si is examined. It is concluded that these substrates are satisfactory in their cell performance.

  11. Metalorganic Vapor Phase Epitaxial Growth of (211)B CdTe on Nanopatterned (211)Si

    DTIC Science & Technology

    2012-05-15

    SUBJECT TERMS CdTe Epitaxy, Molecular Transfer Lithography, Dislocation Reduction Shashidhar Shintri*,1, , Sunil Rao2, , Charles Schaper3, , Witold...2012) / DOI 10.1002/pssc.201100653 Metalorganic vapor phase epitaxial growth of (211)B CdTe on nanopatterned (211)Si Shashidhar Shintri*,1, Sunil

  12. Blanket and Patterned Growth of CdTe on (211)Si Substrates by Metal-Organic Vapor Phase Epitaxy

    DTIC Science & Technology

    2012-05-15

    Vapor Deposition, Epitaxial Lateral Overgrowth, Selective Epitaxy, CdTe Ishwara B. Bhat*,1, , Sunil R. Rao1, , Shashidhar Shintri2, , Randolph N...growth of CdTe on (211)Si substrates by metal- organic vapor phase epitaxy Ishwara B. Bhat*,1, Sunil R. Rao1, Shashidhar Shintri2, and Randolph N

  13. Structural, elastic and thermodynamic properties of tetragonal and orthorhombic polymorphs of Sr2GeN2: an ab initio investigation

    NASA Astrophysics Data System (ADS)

    Bedjaoui, A.; Bouhemadou, A.; Bin-Omran, S.

    2016-04-01

    The structural, elastic and thermodynamic properties of the α (tetragonal) and β (orthorhombic) polymorphs of the Sr2GeN2 compound have been examined in detail using ab initio density functional theory pseudopotential plane-wave calculations. Apart the structural properties at the ambient conditions, all present reported results are predicted for the first time. The calculated equilibrium lattice parameters and inter-atomic bond-lengths of the considered polymorphs are in good agreement with the available experimental data. It is found that α-Sr2GeN2 is energetically more stable than β-Sr2GeN2. The two examined polymorphs are very similar in their crystal structures and have almost identical local environments. The single-crystal and polycrystalline elastic parameters and related properties - including elastic constants, bulk, shear and Young's moduli, Poisson's ratio, anisotropy indexes, Pugh's criterion, elastic wave velocities and Debye temperature - have been predicted. Temperature and pressure dependence of some macroscopic properties - including the unit-cell volume, bulk modulus, volume thermal expansion coefficient, heat capacity and Debye temperature - have been evaluated using ab initio calculations combined with the quasi-harmonic Debye model.

  14. Specific heat analysis of the low temperature anomalies in orthorhombic PrBa2Cu3O6+ x (x = 1; x = 0.95) compounds

    NASA Astrophysics Data System (ADS)

    Lahoubi, M.

    2016-03-01

    The specific heat Cp(T) and entropy S(T) properties of the orthorhombic PrBa2Cu3O6+x compounds in two states of oxygen concentration x, an over doped (OV) with x = 1 and an optimally doped (OP) with x = 0.95 are reanalyzed below the Néel temperature of the antiferromagnetic ordering of the Pr sublattice T N = 17.5 and 14 K, respectively. Two simultaneous anomalies for both states are observed. The first one occurs near the previous spin reorientation phase transition temperature T 2 ∼ 11.5 and ∼ 9-10 K, respectively whereas the second one remains close to the so called low-critical temperature Tcr ∼ 4-5 K for the OV state as it has been reported before for the OP state. By fitting the C p(T)/T data to A{T 2}-3/2 + γ + C{T 2}1 + D{T1}2 for T < T cr the four coefficients obtained with the best adjusted A-squared values are compared with previous findings. Reduced values for y are confirmed in this work. The results which are well described by the contribution of the DT 5 term to Cp(T) can be connected with the previous Pr-Cu(2) magnetic coupling that is sufficiently enough to cause a modest spin reorientation phase transition at T2 and a critical magnetic behaviour below Tcr .

  15. Investigations on the local structures and spin Hamiltonian parameters for the orthorhombic Rh2+ centers R4 and R5 in AgCl microcrystals

    NASA Astrophysics Data System (ADS)

    Hu, Xian-Fen; Wu, Shao-Yi; Li, Guo-Liang; Ding, Chang-Chun; Zhang, Li-Juan

    2016-06-01

    The local structures and spin Hamiltonian parameters (SHPs, g factors, hyperfine structure constants and superhyperfine parameters) are theoretically investigated for the two orthorhombic Rh2+centers R4 and R5 in AgCl microcrystals. Center R4 is ascribed to the impurity Rh2+substituted for Ag+ with two H2O molecules substituted for the nearest neighbor ligands Cl- along the [100] and [010] axes, each with one next nearest neighbor Ag+ vacancy (VAg) due to charge compensation. The impurity Rh2+is found to experience a small off-center displacement 0.006 Å along the [ 1 bar 1 bar 0 ] axis because of the electrostatic interactions of the substitutes and the VAg. Center R5 is attributed to the impurity Rh2+substituted for Ag+ associated with one H2O molecule substituted for the nearest neighbor ligand Cl- along the [100] axis and one next nearest VAg along the [010] axis. Due to the effective positive charge of the substitute, Rh2+ is repulsed away from the substitute by about 0.008 Å along the [ 1 bar 00 ] axis, while the intervening ligand Cl- in Rh2+and VAg suffers a small inward displacement 0.010 Å towards the center of octahedron. The calculated SHPs based on the above local structures show good agreement with the experimental data for both centers.

  16. An investigation of the stable orientations of orthorhombic particles in a thin film and their effect on its critical failure pressure.

    PubMed

    Morris, G; Neethling, S J; Cilliers, J J

    2011-09-01

    The effects of shape and contact angle on the behaviour of orthorhombic particles at an interface and in thin films were investigated using Surface Evolver. It is shown that the energetically stable orientations of the particle change with its aspect ratio. Long, wide, flat particles with low contact angles are more stable in flat orientations, i.e. with two faces parallel to the flat film surface. More cubic particles with higher contact angles are more stable in twisted orientations, where the opposite sides of the film can be drawn together at the sharp edges of the particle. The combination of contact angle and orientation has been found to have a large effect on the capillary pressure required to rupture the film. A film containing a particle in a flat orientation will rupture at a capillary pressure up to three times greater than one containing an identical particle in a twisted orientation. Wider, flatter particles with low contact angles stabilise thin liquid films to a greater extent than cubic particles with high contact angles.

  17. Structure-property relations of orthorhombic [(CH3)3NCH2COO]2(CuCl2)3 · 2H2 O

    NASA Astrophysics Data System (ADS)

    Haussühl, Eiken; Schreuer, Jürgen; Wiehl, Leonore; Paulsen, Natalia

    2014-04-01

    Large single crystals of orthorhombic [(CH3)3NCH2COO]2(CuCl2)3 · 2H2 O with dimensions up to 40×40×30 mm3 were grown from aqueous solutions. The elastic and piezoelastic coefficients were derived from ultrasonic resonance frequencies and their shifts upon variation of pressure, respectively, using the plate-resonance technique. Additionally, the coefficients of thermal expansion were determined between 95 K and 305 K by dilatometry. The elastic behaviour at ambient conditions is dominated by the 2-dimensional network of strong hydrogen bonds within the (001) plane leading to a corresponding pseudo-tetragonal anisotropy of the longitudinal elastic stiffness. The variation of elastic properties with pressure, however, as well as the thermal expansion shows strong deviations from the pseudo-tetragonal symmetry. These deviations are probably correlated with tilts of the elongated tri-nuclear betaine-CuCl2-water complexes. Neither the thermal expansion nor the specific heat capacity gives any hint on a phase transition in the investigated temperature range.

  18. Density functional theory insights into the structural stability and Li diffusion properties of monoclinic and orthorhombic Li2FeSiO4 cathodes

    NASA Astrophysics Data System (ADS)

    Lu, Xia; Chiu, Hsien-Chieh; Bevan, Kirk H.; Jiang, De-Tong; Zaghib, Karim; Demopoulos, George P.

    2016-06-01

    Lithium iron orthosilicate (Li2FeSiO4) is an important alternative cathode for next generation Li-ion batteries due to its high theoretical capacity (330 mA h/g). However, its development has faced great challenges arising from significant structural complexity, including the disordered arrangement/orientation of Fe/Si tetrahedra, polytypes and its poorly understood Li storage and transport properties. In this context, ab-initio calculations are employed to investigate the phase stability and Li diffusion profiles of both monoclinic (P21) and orthorhombic (Pmn21) Li2FeSiO4 orthosilicates. The calculations demonstrate that formation of Lisbnd Fe antisites can induce a metastability competition between both phases, with neither dominating across nearly the entire discharging profile from Li2FeSiO4 through to LiFeSiO4. Furthermore, structural instability is shown to be a serious concern at discharge concentrations below LiFeSiO4 (1 Li extraction) due to the shared occupation of Li donated electrons with oxygen 2p orbitals - rather than the hypothesized transition to a tetravalent Fe4+ state. This finding is further supported by diffusion calculations that have determined a high activation energy barrier towards fast charging and rapid phase transitions. In summary, these theoretical results provide critical and timely insight into the structural dynamics of lithium iron orthosilicate, in pursuit of high energy density cathodes.

  19. Ferroelectric ordering and magnetoelectric effect of pristine and Ho-doped orthorhombic DyMnO{sub 3} by dielectric studies

    SciTech Connect

    Magesh, J.; Murugavel, P.; Mangalam, R. V. K.; Singh, K.; Simon, Ch.; Prellier, W.

    2015-08-21

    In this paper, the magnetoelectric coupling and ferroelectric ordering of the orthorhombic Dy{sub 1-x}Ho{sub x}MnO{sub 3} (x = 0 and 0.1) are studied from the magnetodielectric response of the polycrystalline samples. The dielectric study on the DyMnO{sub 3} reveals ferroelectric transition at 18 K along with an addition transition at 12 K. We suggest that the transition at 12 K could have originated from the polarization flop rather than being the rare earth magnetic ordering. The magnetodielectric study reveals a magnetoelectric coupling strength of 10%, which is stronger by two orders of magnitude in comparison to the hexagonal manganites. Surprisingly, the Ho{sup 3+} substitution in DyMnO{sub 3} suppresses the magnetoelectric coupling strength via the suppression of the spiral magnetic ordering. In addition, it also reduces the antiferromagnetic ordering and ferroelectric ordering temperatures. Overall, the studies show that the rare earth plays an important role in the magnetoelectric coupling strength through the modulation of spiral magnetic structure.

  20. Preparation, Structural, Optical, Electrical, and Magnetic Characterisation of Orthorhombic GdCr0.3Mn0.7O3 Multiferroic Nanoparticles

    NASA Astrophysics Data System (ADS)

    Singh, Deepa; Bamzai, K. K.

    2017-01-01

    In this article, chromium-doped gadolinium manganate (GdCr0.3Mn0.7O3) nanoparticles has been prepared by wet-chemical route in order to investigate their structural, optical, electrical, and room temperature magnetic properties. Microstructural and compositional analyses have been carried out by X-ray diffraction and scanning electron microscopy (SEM). Synthesised material is found to be in orthorhombic crystal structure with Pbnm space group. The spherical morphology of the nanoparticles has been examined from the SEM images. Functional groups have been identified using Fourier transform infrared spectroscopy. Dielectric constant, dielectric loss, AC conductivity (σac), and activation energy in the range of 1 kHz-1 MHz from room temperature to high temperature (400°C) have been investigated. The frequency dependence of AC conductivity obeys the universal power law. The value of activation energy depends on increase in frequency. Room temperature magnetic behaviour suggests the material to be paramagnetic in nature.

  1. Adsorption and dissociation of molecular hydrogen on orthorhombic β-Mo2C and cubic δ-MoC (001) surfaces

    NASA Astrophysics Data System (ADS)

    Posada-Pérez, Sergio; Viñes, Francesc; Valero, Rosendo; Rodriguez, José A.; Illas, Francesc

    2017-02-01

    Molybdenum carbides are increasingly used in heterogeneously catalyzed hydrogenation reactions, which imply the adsorption and dissociation of molecular hydrogen. Here a systematic density functional theory based study, including or excluding dispersion terms, concerning the interaction and stability of H2 with cubic δ-MoC(001) and orthorhombic β-Mo2C(001) surfaces, is presented. In the latter case the two possible C or Mo terminations are considered. In addition, different situations for the H covered surfaces are examined. Computational results including dispersive forces predict an essentially spontaneous dissociation of H2 on β-Mo2C(001) independently of the surface termination, whereas on δ-MoC(001) molecular hydrogen dissociation implies a small but noticeable energy barrier. Furthermore, the ab initio thermodynamics formalism has been used to compare the stability of different H coverages. Finally, core level binding energies and vibrational frequencies are presented with the aim to assist the interpretation of yet unavailable data from X-ray photoelectron and infrared spectroscopies.

  2. All-epitaxial Co{sub 2}FeSi/Ge/Co{sub 2}FeSi trilayers fabricated by Sn-induced low-temperature epitaxy

    SciTech Connect

    Kawano, M.; Ikawa, M.; Arima, K.; Yamada, S.; Kanashima, T.; Hamaya, K.

    2016-01-28

    We demonstrate low-temperature growth of all-epitaxial Co{sub 2}FeSi/Ge/Co{sub 2}FeSi trilayer structures by developing Sn-induced surfactant-mediated molecular beam epitaxy (SMBE) of Ge on Co{sub 2}FeSi. Despite the growth of a semiconductor on a metal, we verify that the inserted Sn monolayers between Ge and Co{sub 2}FeSi enable to promote the 2D epitaxial growth of Ge up to 5 nm at a T{sub G} of 250 °C. An understanding of the mechanism of the Sn-induced SMBE leads to the achievement of all-epitaxial Co{sub 2}FeSi/Ge/Co{sub 2}FeSi trilayer structures with spin-valve-like magnetization reversals. This study will open a way for vertical-type and high-performance Ge-based spintronics devices.

  3. Low-temperature plasma-deposited silicon epitaxial films: Growth and properties

    SciTech Connect

    Demaurex, Bénédicte; Bartlome, Richard; Seif, Johannes P.; Geissbühler, Jonas; Alexander, Duncan T. L.; Jeangros, Quentin; Ballif, Christophe; De Wolf, Stefaan

    2014-08-05

    Low-temperature (≤ 180 °C) epitaxial growth yields precise thickness, doping, and thermal-budget control, which enables advanced-design semiconductor devices. In this paper, we use plasma-ehanced chemical vapor deposition to grow homo-epitaxial layers and study the different growth modes on crystalline silicon substrates. In particular, we determine the conditions leading to epitaxial growth in light of a model that depends only on the silane concentration in the plasma and the mean free path length of surface adatoms. For such growth, we show that the presence of a persistent defective interface layer between the crystalline silicon substrate and the epitaxial layer stems not only from the growth conditions but also from unintentional contamination of the reactor. As a result of our findings, we determine the plasma conditions to grow high-quality bulk epitaxial films and propose a two-step growth process to obtain device-grade material.

  4. Mobility enhanced photoactivity in sol-gel grown epitaxial anatase TiO2 films.

    PubMed

    Jung, Hyun Suk; Lee, Jung-Kun; Lee, Jaegab; Kang, Bo Soo; Jia, Quanxi; Nastasi, Michael; Noh, Jun Hong; Cho, Chin-Moo; Yoon, Sung Hoon

    2008-03-18

    Epitaxial anatase thin films were grown on single-crystal LaAlO3 substrates by a sol-gel process. The epitaxial relationship between TiO2 and LaAlO3 was found to be [100]TiO2||[100]LaAlO3 and (001)TiO2||(001)LaAlO3 based on X-ray diffraction and a high-resolution transmission electron microscopy. The epitaxial anatase films show significantly improved photocatalytic properties, compared with polycrystalline anatase film on fused silica substrate. The increase in the photocatalytic activity of epitaxial anatase films is explained by enhanced charge carrier mobility, which is traced to the decreased grain boundary density in the epitaxial anatase film.

  5. Distribution of the surface potential of epitaxial HgCdTe

    SciTech Connect

    Novikov, V. A. Grigoryev, D. V.; Bezrodnyy, D. A.; Dvoretsky, S. A.

    2014-09-08

    We studied the distribution of surface potential of the Hg{sub 1−x}Cd{sub x}Te epitaxial films grown by molecular beam epitaxy. The studies showed that the variation of the spatial distribution of surface potential in the region of the V-defect can be related to the variation of the material composition of epitaxial film. The V-defect is characterized by increased of Hg content with respect to the composition of the solid solution of Hg{sub 1−x}Cd{sub x}Te epitaxial film. In this paper, it was demonstrated that the unformed V-defects can be observed together with the macroscopic V-defects on the epitaxial film surface. These unformed V-defects can allow the creation of a complex surface potential distribution profile due to the redistribution of the solid solution composition.

  6. Structure and magnetism of epitaxial rare-earth-transition-metal films

    SciTech Connect

    Fullerton, E.E.; Sowers, C.H.; Pearson, J.P.; Bader, S.D.

    1996-10-01

    Growth of epitaxial transition-metal superlattices; has proven essential in elucidating the role of crystal orientation and structure on magnetic properties such as giant magnetoresistance, interlayer coupling, and magnetic surface anisotropies. Extending these studies to the growth of epitaxial rare earth-transition metal (RE-TM) films and superlattices promises to play an equally important role in exploring and optimizing the properties of hard magnets. For instance, Skomski and Coey predict that a giant energy product (120 MG Oe) is possible in multilayer structures consisting of aligned hard-magnet layers exchanged coupled with soft-phase layers with high magnetization. Epitaxy provides one route to synthesizing such exchange-hardened magnets on controlled length scales. Epitaxial growth also allows the magnetic properties to be tailored by controlling the crystal orientation and the anisotropies of the magnetic layers and holds the possibility of stabilizing metastable phases. This paper describes the epitaxy and magnetic properties for several alloys.

  7. Chemical beam epitaxy for high efficiency photovoltaic devices

    NASA Technical Reports Server (NTRS)

    Bensaoula, A.; Freundlich, A.; Vilela, M. F.; Medelci, N.; Renaud, P.

    1994-01-01

    InP-based multijunction tandem solar cells show great promise for the conversion efficiency (eta) and high radiation resistance. InP and its related ternary and quanternary compound semiconductors such as InGaAs and InGaAsP offer desirable combinations for energy bandgap values which are very suitable for multijunction tandem solar cell applications. The monolithically integrated InP/In(0.53)Ga(0.47)As tandem solar cells are expected to reach efficiencies above 30 percent. Wanlass, et.al., have reported AMO efficiencies as high as 20.1% for two terminal cells fabricated using atmospheric-pressure metalorganic vapor phase epitaxy (APMOVPE). The main limitations in their technique are first related to the degradation of the intercell ohmic contact (IOC), in this case the In(0.53)Ga(0.47)As tunnel junction during the growth of the top InP subcell structure, and second to the current matching, often limited by the In(0.53)Ga(0.47)As bottom subcell. Chemical beam epitaxy (CBE) has been shown to allow the growth of high quality materials with reproducible complex compositional and doping profiles. The main advantage of CBE compared to metalorganic chemical vapor deposition (MOCVD), the most popular technique for InP-based photovoltaic device fabrication, is the ability to grow high purity epilayers at much lower temperatures (450 C - 530 C). In a recent report it was shown that cost-wise CBE is a breakthrough technology for photovoltaic (PV) solar energy progress in the energy conversion efficiency of InP-based solar cells fabricated using chemical beam epitaxy. This communication summarizes our recent results on PV devices and demonstrates the strength of this new technology.

  8. Epitaxial electrodeposition of chiral and spintronic metal oxides

    NASA Astrophysics Data System (ADS)

    Kothari, Hiten Mahendra

    This dissertation presents an investigation of the electrodeposition of epitaxial and polycrystalline functional metal oxide films on conducting polycrystalline and single crystal substrates. In the first part of the study, electrodeposited CuO films are shown to be enantiospecific catalysts. In the second part of the study, Fe3O4 films are electrodeposited with a magnetoresistance of ˜-6 % at 300 K in a field of 9 T. Synthesis, separation and detection of enantiomers are of great interest to the pharmaceutical industry. Heterogeneous catalysts are easily separated and reduce the cost of the process. Electrodeposited epitaxial films of CuO onto achiral Au and Cu single crystals using chiral precursors to complex Cu(II) are shown to be enantiospecific catalysts. CuO electrodeposits with a chiral orientation, even though the material does not crystallize in a chiral space group. The chirality of the electrodeposited films is dictated at the molecular level by the chiral solution precursors. X-ray diffraction pole figures and azimuthal scans, in conjunction with stereographic projections, are used to determine the absolute configuration and the enantiomeric excess of the chiral CuO films. Polycrystalline and epitaxial films of magnetite are electrodeposited on polycrystalline and Au(111) surfaces by the electrochemical reduction of a Fe(III)-triethanolamine complex in alkaline solution. Room temperature MR values of ˜-6.5 and -6% are obtained in a magnetic field of 9 T with the field parallel and perpendicular to the film plane, respectively. The observed MR behavior is consistent with the reported model of tunneling transport of spin polarized electrons across antiferromagnetic grain boundaries.

  9. Effects of Steering and Shadowing in Epitaxial Growth

    NASA Astrophysics Data System (ADS)

    Amar, Jacques

    2005-03-01

    While shadowing has been known to play a role in some thin-film deposition processes, until recently it has been assumed that in epitaxial growth the effects of steering and shadowing are negligible. Here we present analytical and molecular dynamics results describing the effects of steering due to the short-range and long-range van der Waals (vdW) attraction in metal (100), (111) and (110) epitaxial growth. Our results lead to a general picture of the process of deposition near step-edges^1,2 which is quite different from the standard downward funneling picture. In particular, we find that short-range attraction plays an important role not only before but also after collision with the step. As a result, it can significantly enhance the uphill current, selected mound angle, and surface roughness in epitaxial growth. In the case of deposition on metal (111) and (110) surfaces we also find a significant asymmetry between the interaction at A and B steps which may be explained by differences in the step geometry. General expressions for the surface current and selected mound angle valid for arbitrary crystal geometry are also presented. We have also calculated the vdW constant describing the long-range interaction between a Cu atom and a Cu(100) surface.^3 Our result is large enough to explain recent observations^4 of a significant increase in mound angle in Cu/Cu(100) growth for large angles of incidence (θ> 50^o) and also indicates that for smaller angles of incidence the dominant effects are due to the short-range rather than to the long-range interaction. Finally, we discuss the effects of shadowing in oblique incidence epitaxial growth and its implications for the control of nanoscale patterning.1. J. Yu and J.G. Amar, Phys. Rev. Lett. 89, 286103 (2002).2. J. Yu and J.G. Amar, Phys. Rev. B 69, 045426 (2004).3. J.G. Amar, Phys. Rev. B 67, 165425 (2003).4. S. van Dijken et al, Phys. Rev. B 61, 14047 (2000).

  10. Delayed Shutters For Dual-Beam Molecular Epitaxy

    NASA Technical Reports Server (NTRS)

    Grunthaner, Frank J.; Liu, John L.; Hancock, Bruce

    1989-01-01

    System of shutters for dual-molecular-beam epitaxy apparatus delays start of one beam with respect to another. Used in pulsed-beam equipment for deposition of low-dislocation layers of InAs on GaAs substrates, system delays application of arsenic beam with respect to indium beam to assure proper stoichiometric proportions on newly forming InAs surface. Reflectance high-energy electron diffraction (RHEED) instrument used to monitor condition of evolving surface of deposit. RHEED signal used to time pulsing of molecular beams in way that minimizes density of defects and holds lattice constant of InAs to that of GaAs substrate.

  11. Epitaxial growth of high quality WO3 thin films

    DOE PAGES

    Leng, X.; Pereiro, J.; Strle, J.; ...

    2015-09-09

    We have grown epitaxial WO3 films on various single-crystal substrates using radio-frequency (RF) magnetron sputtering. While pronounced surface roughness is observed in films grown on LaSrAlO4 substrates, films grown on YAlO3 substrates show atomically flat surfaces, as demonstrated by atomic force microscopy (AFM) and X-ray diffraction (XRD) measurements. The crystalline structure has been confirmed to be monoclinic by symmetric and skew-symmetric XRD. Furthermore, the dependence of the growth modes and the surface morphology on the lattice mismatch is discussed.

  12. Origin of Quantum Ring Formation During Droplet Epitaxy

    NASA Astrophysics Data System (ADS)

    Zhou, Z. Y.; Zheng, C. X.; Tang, W. X.; Tersoff, J.; Jesson, D. E.

    2013-07-01

    Droplet epitaxy of GaAs is studied in real time using in situ surface electron microscopy. The resulting movies motivate a theoretical model for quantum ring formation which can explain the origin of nanoscale features such as double rings observed under a variety of experimental conditions. Inner rings correspond to GaAs deposition at the droplet edge, while outer rings result from the reaction of Ga and As atoms diffusing along the surface. The observed variety of morphologies primarily reflects relative changes in the outer rings with temperature and As flux.

  13. Molecular-Beam Epitaxy Of IrSi3

    NASA Technical Reports Server (NTRS)

    Lin, True-Lon

    1991-01-01

    Molecular-beam epitaxy grows layers of iridium silicide (IrSi3) on silicon at temperatures of 630 to 800 degrees C. Particularly useful as photodetector material because it forms Schottky diodes having potential barriers of only 0.12 to 0.15 eV - lowest of any metal on silicon. Photodiodes sensitive to infrared radiation at wavelengths as large as 8 to 10 micrometers. New, lower formation temperature expected to enable growth of arrays of IrSi3/Si infrared detectors on Si wafers without thermally damaging image-processing circuitry integrated on wafers.

  14. Thermal stability of corrugated epitaxial graphene grown on Re(0001).

    PubMed

    Miniussi, E; Pozzo, M; Baraldi, A; Vesselli, E; Zhan, R R; Comelli, G; Menteş, T O; Niño, M A; Locatelli, A; Lizzit, S; Alfè, D

    2011-05-27

    We report on a novel approach to determine the relationship between the corrugation and the thermal stability of epitaxial graphene grown on a strongly interacting substrate. According to our density functional theory calculations, the C single layer grown on Re(0001) is strongly corrugated, with a buckling of 1.6 Å, yielding a simulated C 1s core level spectrum which is in excellent agreement with the experimental one. We found that corrugation is closely knit with the thermal stability of the C network: C-C bond breaking is favored in the strongly buckled regions of the moiré cell, though it requires the presence of diffusing graphene layer vacancies.

  15. Chiral habit selection on nanostructured epitaxial quartz films.

    PubMed

    Carretero-Genevrier, Adrián; Gich, Martí; Picas, Laura; Sanchez, Clément; Rodriguez-Carvajal, Juan

    2015-01-01

    Understanding the crystallization of enantiomorphically pure systems can be relevant to diverse fields such as the study of the origins of life or the purification of racemates. Here we report on polycrystalline epitaxial thin films of quartz on Si substrates displaying two distinct types of chiral habits that never coexist in the same film. We combine Atomic Force Microscopy (AFM) analysis and computer-assisted crystallographic calculations to make a detailed study of these habits of quartz. By estimating the surface energies of the observed crystallites we argue that the films are enantiomorphically pure and we briefly outline a possible mechanism to explain the habit and chiral selection in this system.

  16. Wafer bonding solution to epitaxial graphene-silicon integration

    NASA Astrophysics Data System (ADS)

    Dong, Rui; Guo, Zelei; Palmer, James; Hu, Yike; Ruan, Ming; Hankinson, John; Kunc, Jan; Bhattacharya, Swapan K.; Berger, Claire; de Heer, Walt A.

    2014-03-01

    A new strategy for the integration of graphene electronics with silicon complementary metal-oxide-semiconductor (Si-CMOS) technology is demonstrated that requires neither graphene transfer nor patterning. Inspired by silicon-on-insulator and three-dimensional device hyper-integration techniques, a thin monocrystalline silicon layer ready for CMOS processing is bonded to epitaxial graphene (EG) on SiC. The parallel Si and graphene electronic platforms are interconnected by metal vias. In this method, EG is grown prior to bonding so that the process is compatible with EG high temperature growth and preserves graphene integrity and nano-structuring.

  17. Surface morphology during multilayer epitaxial growth of Ge(001)

    SciTech Connect

    Van Nostrand, J.E.; Chey, S.J.; Hasan, M.; Cahill, D.G.; Greene, J.E. )

    1995-02-13

    The surface morphology of Ge(001) films grown by molecular beam epitaxy on a Ge(001) substrate is measured using scanning tunneling microscopy. Growth mounds are observed for single crystal films deposited at temperatures of 60--230 [degree]C and film thicknesses of 5 nm to 1 [mu]m. With increasing growth temperature, the average separation between mounds becomes increasingly well defined, increasing from less than 10 nm at 60 [degree]C to nearly 200 nm at 230 [degree]C. This regular arrangement of growth mounds is inconsistent with the self-affine growth morphology predicted by most kinetic roughening models.

  18. Van der Waals Epitaxy of Functional Oxide Heterostructures

    NASA Astrophysics Data System (ADS)

    Chu, Ying-Hao

    In the diligent pursuit of low-power consumption, multifunctional, and environmentally friendly electronics, more sophisticated requirements on functional materials are on demand. Recently, the discovery of 2D layered materials has created a revolution to this field. Pioneered by graphene, these new 2D materials exhibit abundant unusual physical phenomena that is undiscovered in bulk forms. These materials are characterized with their layer form and almost pure 2D electronic behavior. The confinement of charge and heat transport at such ultrathin planes offers possibilities to overcome the bottleneck of present device development in thickness limitation, and thus push the technologies into next generation. Van der Waals epitaxy, an epitaxial growth method to combine 2D and 3D materials, is one of current reliable manufacturing processes to fabricate 2D materials by growing these 2D materials epitaxially on 3D materials. Then, transferring the 2D materials to the substrates for practical applications. In the mean time, van der Waals epitaxy has also been used to create free-standing 3D materials by growing 3D materials on 2D materials and then removing them from 2D materials since the interfacial boding between 2D and 3D materials should be weak van der Waals bonds. In this study, we intend to take the same concept, but to integrate a family of functional materials in order to open new avenue to flexible electronics. Due to the interplay of lattice, charge, orbital, and spin degrees of freedom, correlated electrons in oxides generate a rich spectrum of competing phases and physical properties. Recently, lots of studies have suggested that oxide heterostructures provide a powerful route to create and manipulate the degrees of freedom and offer new possibilities for next generation devices, thus create a new playground for researchers to investigate novel physics and the emergence of fascinating states of condensed matter. In this talk, we use a 2D layered material as

  19. Single-domain epitaxial silicene on diboride thin films

    DOE PAGES

    Fleurence, A.; Gill, T. G.; Friedlein, R.; ...

    2016-04-12

    Epitaxial silicene, which forms spontaneously on ZrB2(0001) thin films grown on Si(111) wafers, has a periodic stripe domain structure. By adsorbing additional Si atoms on this surface, we find that the domain boundaries vanish, and a single-domain silicene sheet can be prepared without altering its buckled honeycomb structure. The amount of Si required to induce this change suggests that the domain boundaries are made of a local distortion of the silicene honeycomb lattice. LastlThe realization of a single domain sheet with structural and electronic properties close to those of the original striped state demonstrates the high structural flexibility of silicene.

  20. The prediction and confirmation of critical epitaxial parameters

    NASA Technical Reports Server (NTRS)

    Van Der Merwe, Jan; Jesser, W. A.

    1988-01-01

    The coherency-incoherency transition in epitaxial crystals is said to take place at a critical misfit f(c) or, for a system in which a monolayer is subcritical, at a critical thickness h(c). In this paper, the physical principles and models used to predict critical parameters are analyzed and put into perspective. The dependence of the relevant principles on the equilibrium-nonequilibrium conditions under which the quantities are measured in practice is stressed. The advantages and disadvantages of the models used (essentially the Frenkel-Kontorowa and Volterra models) are highlighted.

  1. Modeling of Gallium Nitride Hydride Vapor Phase Epitaxy

    NASA Technical Reports Server (NTRS)

    Meyyappan, Meyya; Arnold, James O. (Technical Monitor)

    1997-01-01

    A reactor model for the hydride vapor phase epitaxy of GaN is presented. The governing flow, energy, and species conservation equations are solved in two dimensions to examine the growth characteristics as a function of process variables and reactor geometry. The growth rate varies with GaCl composition but independent of NH3 and H2 flow rates. A change in carrier gas for Ga source from H2 to N2 affects the growth rate and uniformity for a fixed reactor configuration. The model predictions are in general agreement with observed experimental behavior.

  2. Enhanced Luminescence in Epitaxial Oxide Thin-Film Phosphors

    SciTech Connect

    Lee, Y.E.; Norton, D.P.; Budai, J.D.; Park, C.; Kim, M.; Pennycook, S.J.; Rack, P.D.; Potter, M.D.

    1999-11-08

    Undoped and Mn-doped ZnGa{sub 2}O{sub 4} thin-film phosphors were grown using pulsed laser ablation on (100) MgO single crystal and glass substrates. X-ray results showed the films on (100) MgO are well aligned both out-of plane and in-plane. Epitaxial films show superior photoluminescent intensity as compared to randomly oriented polycrystalline films, indicating that intragranular crystallinity strongIy influences luminescent properties. Li-doped ZnGa{sub 2}O{sub 4} exhibited significantly enhanced photoluminescence intensity.

  3. Low contact resistance in epitaxial graphene devices for quantum metrology

    SciTech Connect

    Yager, Tom E-mail: ywpark@snu.ac.kr; Lartsev, Arseniy; Lara-Avila, Samuel; Kubatkin, Sergey; Cedergren, Karin; Yakimova, Rositsa; Panchal, Vishal; Kazakova, Olga; Tzalenchuk, Alexander; Kim, Kyung Ho; Park, Yung Woo E-mail: ywpark@snu.ac.kr

    2015-08-15

    We investigate Ti/Au contacts to monolayer epitaxial graphene on SiC (0001) for applications in quantum resistance metrology. Using three-terminal measurements in the quantum Hall regime we observed variations in contact resistances ranging from a minimal value of 0.6 Ω up to 11 kΩ. We identify a major source of high-resistance contacts to be due bilayer graphene interruptions to the quantum Hall current, whilst discarding the effects of interface cleanliness and contact geometry for our fabricated devices. Moreover, we experimentally demonstrate methods to improve the reproducibility of low resistance contacts (<10 Ω) suitable for high precision quantum resistance metrology.

  4. Strong circular photogalvanic effect in ZnO epitaxial films

    SciTech Connect

    Zhang, Q.; Wang, X. Q.; Yin, C. M.; Shen, B.; Chen, Y. H.; Chang, K.; Ge, W. K.

    2011-12-23

    A strong circular photogalvanic effect (CPGE) in ZnO epitaxial films was reported under interband excitation. It was observed that CPGE current is as large as 100 nA/W in ZnO, which is about one order in magnitude higher than that in InN film while the CPGE currents in GaN films are not detectable. The possible reasons for the above observations are the strong spin orbit coupling in ZnO or the inversed valence band structure of ZnO.

  5. Strong circular photogalvanic effect in ZnO epitaxial films

    NASA Astrophysics Data System (ADS)

    Zhang, Q.; Wang, X. Q.; Yin, C. M.; Shen, B.; Chen, Y. H.; Chang, K.; Ge, W. K.

    2011-12-01

    A strong circular photogalvanic effect (CPGE) in ZnO epitaxial films was reported under interband excitation. It was observed that CPGE current is as large as 100 nA/W in ZnO, which is about one order in magnitude higher than that in InN film while the CPGE currents in GaN films are not detectable. The possible reasons for the above observations are the strong spin orbit coupling in ZnO or the inversed valence band structure of ZnO.

  6. Strong circular photogalvanic effect in ZnO epitaxial films

    NASA Astrophysics Data System (ADS)

    Zhang, Q.; Wang, X. Q.; Yin, C. M.; Xu, F. J.; Tang, N.; Shen, B.; Chen, Y. H.; Chang, K.; Ge, W. K.; Ishitani, Y.; Yoshikawa, A.

    2010-07-01

    We report a strong circular photogalvanic effect (CPGE) in ZnO epitaxial films under interband excitation. It is observed that CPGE current is as large as 100 nA/W in ZnO, which is about one order in magnitude higher than that in InN film while the CPGE currents in GaN films are not detectable. The possible reasons for the above observations are the strong spin orbit coupling in ZnO or the inversed valence band structure of ZnO.

  7. Single-domain epitaxial silicene on diboride thin films

    SciTech Connect

    Fleurence, A.; Gill, T. G.; Friedlein, R.; Sadowski, J. T.; Aoyagi, K.; Copel, M.; Tromp, R. M.; Hirjibehedin, C. F.; Yamada-Takamura, Y.

    2016-04-12

    Epitaxial silicene, which forms spontaneously on ZrB2(0001) thin films grown on Si(111) wafers, has a periodic stripe domain structure. By adsorbing additional Si atoms on this surface, we find that the domain boundaries vanish, and a single-domain silicene sheet can be prepared without altering its buckled honeycomb structure. The amount of Si required to induce this change suggests that the domain boundaries are made of a local distortion of the silicene honeycomb lattice. LastlThe realization of a single domain sheet with structural and electronic properties close to those of the original striped state demonstrates the high structural flexibility of silicene.

  8. Lattice-Matched HgZnTe Epitaxy Development.

    DTIC Science & Technology

    1988-04-01

    7 D- 193 6?? LATTICE- ATCHED HGZNTE EPITRXY DEVELOPMENT(U) MERCURY 1/1 UNCRSIFI3 ?? F33615-86-C-5185 AFWL-TR-S?-4133 Uw : AS ID F/C 20/2 NL...8217"., + ._ _ N A. AFWAL-TR-87-4133 QLATTICE-MATCHED HgZnTe EPITAXY DEVELOPMENT 0David G. Ryding Mercury L.P.E. Company, Inc. Pittsburg, PA 15238 April 1988...6a. NAME OF PERFORMING ORGANIZATION 6b. OFFICE SYMBOL 7a. NAME OF MONITORING ORGANIZATION Mercury L.P.E. Company, Inc. (Ifapplicable) Air Force Wright

  9. MOS structures based on epitaxial HgCdTe layers

    SciTech Connect

    Antonov, V.V.; Belashov, Y.G.; Kazak, E.P.; Mezentseva, M.P.; Voitsekhovskii, A.V.

    1985-08-01

    The authors present the results of a study of the dependence of the surface photoelectromotive force at wavelengths of 3.39 and 10.6 micrometers on the field electrode for MOS structures prepared from epitaxial Hg /SUB 1-x/ Cd /SUB x/ Te layers (x=0.20-0.25). They analyze the nature of the inhomogeneities in the region near the surface of semiconducting samples prepared under various heat treatment conditions and present their findings in a series of three charts.

  10. Growth of amorphous and epitaxial alternative gate dielectrics on silicon by molecular-beam epitaxy and their characterization

    NASA Astrophysics Data System (ADS)

    Edge, Lisa Friedman

    The continued scaling of SiO2 in metal-oxide-semiconductor field-effect transistors (MOSFETs) is approaching its fundamental limit and in the next few years will have to be replaced with an alternative gate dielectric if Moore's law is to continue. In a search for suitable alternative dielectrics, I have investigated the growth of amorphous and epitaxial LaAlO3, LaScO3, La2O3, and Sc2O3 thin films by molecular-beam epitaxy (MBE) on silicon. A major challenge in the growth of alternative gate dielectrics on silicon is the formation of SiO2 at the interface between silicon and the high- K gate dielectric. In this dissertation, I have established deposition conditions that yielded abrupt interfaces (< 0.1 A of SiO2) between amorphous LaAlO3 or LaScO3 thin films and silicon. These results demonstrate the thinnest gate dielectrics ever produced that are free of interfacial SiO2, despite exposure to air. The thermal stability between silicon and the abrupt amorphous LaAlO 3 and LaScO3 thin films was established for the first time. By 900°C, crystallization is clearly observed, but the LaAlO3/Si interface remains sharp with no detectable interfacial SiO2. The thermal stability results establish key processing windows for the integration of amorphous LaAlO3 and LaScO3 thin films into silicon-based MOSFETs. In this work, the following critical physical properties of amorphous LaAlO3 thin films deposited on silicon have been determined: dielectric constant (K = 16 +/- 2), bandgap (Eg = 6.2 +/- 0.1 eV), and band alignment (DeltaEc = 1.8 +/- 0.2 for electrons and DeltaEv = 3.2 +/- 0.1 eV for holes). The following critical physical properties of amorphous LaScO3 thin films deposited on silicon have been determined: bandgap (Eg = 5.7 +/- 0.1 eV) and band alignment (DeltaEc = 2.0 +/- 0.1 eV for electrons and DeltaEv = 3.1 +/- 0.1 eV for holes). In this dissertation, epitaxial (0001) La2O3 thin films with the hexagonal crystal structure were grown on (111) Si for the first time

  11. Advances in modeling semiconductor epitaxy: Contributions of growth orientation and surface reconstruction to InN metalorganic vapor phase epitaxy

    NASA Astrophysics Data System (ADS)

    Kusaba, Akira; Kangawa, Yoshihiro; Kempisty, Pawel; Shiraishi, Kenji; Kakimoto, Koichi; Koukitu, Akinori

    2016-12-01

    We propose a newly improved thermodynamic analysis method that incorporates surface energies. The new theoretical approach enables us to investigate the effects of the growth orientation and surface reconstruction. The obtained knowledge would be indispensable for examining the preferred growth conditions in terms of the contribution of the surface state. We applied the theoretical approach to study the growth processes of InN(0001) and (000\\bar{1}) by metalorganic vapor phase epitaxy. Calculation results reproduced the difference in optimum growth temperature. That is, we successfully developed a new theoretical approach that can predict growth processes on various growth surfaces.

  12. Substrate Preparations in Epitaxial ZnO Film Growth

    NASA Technical Reports Server (NTRS)

    Zhu, Shen; Su, C.-H.; Lehoczky, S. L.; Harris, M. T.; Callahan, M. J.; George, M. A.

    2000-01-01

    Epitaxial ZnO films were grown on the two polar surfaces (O-face and Zn-face) of (0001) ZnO single crystal substrates using off-axis magnetron sputtering deposition. Annealing-temperature dependence of ZnO substrates was studied. ZnO films grown on sapphire substrates have also been investigated for comparison purposes and the annealing temperature of A1203 substrates is 1000 C. Substrates and films were characterized using photoluminescence (PL) spectrum, x-ray diffraction, atomic force microscope, energy dispersive spectrum, and electric transport measurements. It has been found that the ZnO film properties were different when films were grown on the two polarity surfaces of ZnO substrates and the A1203 substrates. An interesting result shows that high temperature annealing of ZnO single crystals will improve the surface structure on the O-face surface rather than the opposite surface. The measurements of homoepitaxial ZnO films indicate that the O-terminated surface is better for ZnO epitaxial film growth.

  13. Optimal doping control of magnetic semiconductors via subsurfactant epitaxy

    SciTech Connect

    Zeng, Changgan; Zhang, Zhenyu; van Benthem, Klaus; Chisholm, Matthew F; Weitering, Harm H

    2008-02-01

    Dilute magnetic semiconductors (DMS) with high ferromagnetic ordering temperatures (T{sub c}) have vast potential for advancing spin-based electronics or 'spintronics'. To date, achieving high-T{sub c} DMS typically required doping levels of order 5%. Such high doping levels inevitably compromise the structural homogeneity and carrier mobility of the DMS. Here, we establish 'subsurfactant epitaxy' as a novel kinetic pathway for synthesizing Mn-doped germanium with T{sub c} much higher than room temperature, at dramatically reduced doping levels. This is accomplished by optimal control of the diffusion kinetics of the dopant atoms near the growth front in two separate deposition steps. The first involves a submonolayer dose of Mn on Ge(100) at low temperature, which populates subsurface interstitial sites with Mn while suppressing lateral Mn diffusion and clustering. The second step involves epitaxial growth of Ge at elevated temperature, taking advantage of the strong floating ability of the interstitial Mn dopants towards the newly defined subsurface sites at the growth front. Most remarkably, the Mn dopants trapped inside the film are uniformly distributed at substitutional sites, and the resulting film exhibits ferromagnetism above 400 K at the nominal doping level of only 0.2%.

  14. Anisotropy determination in epitaxial Sm-Co/Fe exchange springs

    SciTech Connect

    Pechan, Michael J.; Teng, Nienchtze; Stewart, Jason-Dennis; Hilt, J. Zachary; Fullerton, Eric E.; Jiang, J. S.; Sowers, C. H.; Bader, S. D.

    2000-05-01

    We report in-plane anisotropy in epitaxial Sm-Co(x)/Fe(y) bilayers as determined by ferromagnetic resonance (FMR). Four samples, (x,y)=(35,30) and (20, 20) nm each on MgO (110) and (100) substrates, have been prepared via magnetron sputtering. The two substrate orientations result in twofold and fourfold Sm-Co symmetry respectively, with the Sm-Co c-axis in-plane. Magnetization curves indicate elastic exchange spring Fe behavior in reversing fields up to the Sm-Co switching fields (6 and 8 kG at room temperature in the (35, 30) and (20, 20) nm films, respectively). 35 GHz in-plane FMR measurements were made in order to map the crystalline anisotropy of the Fe layer as well as the induced anisotropy from the exchange coupling to the Sm-Co layer. The twofold Sm-Co samples exhibit a clear superposition of the near fourfold Fe crystal field anisotropy (530 Oe) and the unidirectional exchange-bias anisotropy ({approx_equal}650 Oe) arising from the Fe/Sm-Co interface. The crystalline Fe anisotropy in the fourfold Sm-Co samples is less well defined, presumably due to poorer epitaxy of the Fe layer for this orientation. (c) 2000 American Institute of Physics.

  15. Emitter Choice for Epitaxial CdTe Solar Cells

    SciTech Connect

    Song, Tao; Kanevce, Ana; Sites, James R.

    2016-11-21

    High-quality epitaxial CdTe layers with low defect density and high carrier concentration have been demonstrated by several research groups. Nevertheless, one primary challenge for high-performance epitaxial CdTe solar cells is how to choose a suitable emitter partner for the junction formation. The numerical simulations show that a type I heterojunction with small conduction band offset (0.1 eV = ..delta..Ec = 0.3 eV) is necessary to maintain a good cell efficiency even with large interface recombination. Otherwise, a small 'cliff' can assist interface recombination causing smaller Voc, and a large 'spike' (..delta..Ec = 0.4 eV) can impede the photo current and lead to a reduction of JSC and FF. Among the three possible emitters, CdS, CdMgTe, and MgZnO, CdMgTe (with ~30% Mg) and MgZnO (with ~ 20% Mg) are likely to be a better choice since their type-I junction can tolerate a larger density of interface defects.

  16. Epitaxial stabilization and phase instability of VO2 polymorphs

    PubMed Central

    Lee, Shinbuhm; Ivanov, Ilia N.; Keum, Jong K.; Lee, Ho Nyung

    2016-01-01

    The VO2 polymorphs, i.e., VO2(A), VO2(B), VO2(M1) and VO2(R), have a wide spectrum of functionalities useful for many potential applications in information and energy technologies. However, synthesis of phase pure materials, especially in thin film forms, has been a challenging task due to the fact that the VO2 polymorphs are closely related to each other in a thermodynamic framework. Here, we report epitaxial stabilization of the VO2 polymorphs to synthesize high quality single crystalline thin films and study the phase stability of these metastable materials. We selectively deposit all the phases on various perovskite substrates with different crystallographic orientations. By investigating the phase instability, phonon modes and transport behaviours, not only do we find distinctively contrasting physical properties of the VO2 polymorphs, but that the polymorphs can be on the verge of phase transitions when heated as low as ~400 °C. Our successful epitaxy of both VO2(A) and VO2(B) phases, which are rarely studied due to the lack of phase pure materials, will open the door to the fundamental studies of VO2 polymorphs for potential applications in advanced electronic and energy devices. PMID:26787259

  17. Structure and transport of topological insulators on epitaxial graphene

    NASA Astrophysics Data System (ADS)

    Kally, James; Reifsnyder Hickey, Danielle; Lin, Yu-Chuan; Richardella, Anthony; Lee, Joon Sue; Robinson, Joshua; Mkhoyan, K. Andre; Samarth, Nitin

    Recent advancements in spintronics have shown that a class of materials, topological insulators (TI), can be used as a spin-current generator or detector. Topological insulators have protected surface states with the electron's spin locked to its momentum. To access these surface states, (Bi, Sb)2Te3 can be grown by molecular beam epitaxy to have the Fermi energy near the Dirac point so that transport occurs only through the spin-dependent surface states. Graphene is another 2D material of great interest for spintronics because of its very long spin diffusion length. This is an ideal material to act as a spin channel in devices. The van der Waals nature of the growth exhibited by 2D materials such as (Bi, Sb)2Te3 and graphene allows heterostructures to be formed despite the large lattice mismatch. We explore the structure and transport of (Bi, Sb)2Te3 grown on epitaxial graphene on 6H-SiC substrates for spintronic applications. This work was supported in part by C-SPIN and LEAST, two of the six centers of STARnet, a Semiconductor Research Corporation program, sponsored by MARCO and DARPA.

  18. Charged nano-domes and bubbles in epitaxial graphene.

    PubMed

    Trabelsi, A Ben Gouider; Kusmartsev, F V; Robinson, B J; Ouerghi, A; Kusmartseva, O E; Kolosov, O V; Mazzocco, R; Gaifullin, Marat B; Oueslati, M

    2014-04-25

    For the first time, new epitaxial graphene nano-structures resembling charged 'bubbles' and 'domes' are reported. A strong influence, arising from the change in morphology, on the graphene layer's electronic, mechanical and optical properties has been shown. The morphological properties of these structures have been studied with atomic force microscopy (AFM), ultrasonic force microscopy (UFM) and Raman spectroscopy. After initial optical microscopy observation of the graphene, a detailed description of the surface morphology, via AFM and nanomechanical UFM measurements, was obtained. Here, graphene nano-structures, domes and bubbles, ranging from a few tens of nanometres (150–200 nm) to a few μm in size have been identified. The AFM topographical and UFM stiffness data implied the freestanding nature of the graphene layer within the domes and bubbles, with heights on the order of 5–12 nm. Raman spectroscopy mappings of G and 2D bands and their ratio confirm not only the graphene composition of these structures but also the existence of step bunching, defect variations and the carrier density distribution. In particular, inside the bubbles and substrate there arises complex charge redistribution; in fact, the graphene bubble–substrate interface forms a charged capacitance. We have determined the strength of the electric field inside the bubble–substrate interface, which may lead to a minigap of the order of 5 meV opening for epitaxial graphene grown on 4H-SiC face-terminated carbon.

  19. Charged nano-domes and bubbles in epitaxial graphene

    NASA Astrophysics Data System (ADS)

    Ben Gouider Trabelsi, A.; Kusmartsev, F. V.; Robinson, B. J.; Ouerghi, A.; Kusmartseva, O. E.; Kolosov, O. V.; Mazzocco, R.; Gaifullin, Marat B.; Oueslati, M.

    2014-04-01

    For the first time, new epitaxial graphene nano-structures resembling charged ‘bubbles’ and ‘domes’ are reported. A strong influence, arising from the change in morphology, on the graphene layer’s electronic, mechanical and optical properties has been shown. The morphological properties of these structures have been studied with atomic force microscopy (AFM), ultrasonic force microscopy (UFM) and Raman spectroscopy. After initial optical microscopy observation of the graphene, a detailed description of the surface morphology, via AFM and nanomechanical UFM measurements, was obtained. Here, graphene nano-structures, domes and bubbles, ranging from a few tens of nanometres (150-200 nm) to a few μm in size have been identified. The AFM topographical and UFM stiffness data implied the freestanding nature of the graphene layer within the domes and bubbles, with heights on the order of 5-12 nm. Raman spectroscopy mappings of G and 2D bands and their ratio confirm not only the graphene composition of these structures but also the existence of step bunching, defect variations and the carrier density distribution. In particular, inside the bubbles and substrate there arises complex charge redistribution; in fact, the graphene bubble-substrate interface forms a charged capacitance. We have determined the strength of the electric field inside the bubble-substrate interface, which may lead to a minigap of the order of 5 meV opening for epitaxial graphene grown on 4H-SiC face-terminated carbon.

  20. Epitaxial Heterostructures of Lead Selenide Quantum Dots on Hematite Nanowires.

    PubMed

    Selinsky, Rachel S; Shin, Sanghun; Lukowski, Mark A; Jin, Song

    2012-06-21

    We present a novel method for synthesizing epitaxial quantum dot-nanowire (QD-NW) heterostructures using the example of colloidal PbSe QDs decorated on furnace-grown hematite (α-Fe2O3) NWs. The direct heterogeneous nucleation of QDs on Fe2O3 NWs relies upon an aggressive surface dehydration of the as-synthesized Fe2O3 NWs at 350 °C under vacuum and subsequent introduction of colloidal reactants resulting in direct growth of PbSe QDs on Fe2O3. The synthesis is tunable: the QD diameter distribution and density of QDs on the NWs increase with increased dehydration time, and QD diameters and size distributions decrease with decreased injection temperature of the colloidal synthesis. Transmission electron microscopy (TEM) structural analysis reveals direct heteroepitaxial heterojunctions where the matching faces can be PbSe (002) and Fe2O3 (003) with their respective [11̅0] crystallographic directions aligned. This can be a general approach for integrating colloidal and furnace synthetic techniques, thus broadening possible material combinations for future high-quality, epitaxial nanoscale heterostructures for solar applications.

  1. Epitaxy and Microstructure Evolution in Metal Additive Manufacturing

    NASA Astrophysics Data System (ADS)

    Basak, Amrita; Das, Suman

    2016-07-01

    Metal additive manufacturing (AM) works on the principle of incremental layer-by-layer material consolidation, facilitating the fabrication of objects of arbitrary complexity through the controlled melting and resolidification of feedstock materials by using high-power energy sources. The focus of metal AM is to produce complex-shaped components made of metals and alloys to meet demands from various industrial sectors such as defense, aerospace, automotive, and biomedicine. Metal AM involves a complex interplay between multiple modes of energy and mass transfer, fluid flow, phase change, and microstructural evolution. Understanding the fundamental physics of these phenomena is a key requirement for metal AM process development and optimization. The effects of material characteristics and processing conditions on the resulting epitaxy and microstructure are of critical interest in metal AM. This article reviews various metal AM processes in the context of fabricating metal and alloy parts through epitaxial solidification, with material systems ranging from pure-metal and prealloyed to multicomponent materials. The aim is to cover the relationships between various AM processes and the resulting microstructures in these material systems.

  2. Computational Approach for Epitaxial Polymorph Stabilization through Substrate Selection

    SciTech Connect

    Ding, Hong; Dwaraknath, Shyam S.; Garten, Lauren; Ndione, Paul; Ginley, David; Persson, Kristin A.

    2016-05-25

    With the ultimate goal of finding new polymorphs through targeted synthesis conditions and techniques, we outline a computational framework to select optimal substrates for epitaxial growth using first principle calculations of formation energies, elastic strain energy, and topological information. To demonstrate the approach, we study the stabilization of metastable VO2 compounds which provides a rich chemical and structural polymorph space. We find that common polymorph statistics, lattice matching, and energy above hull considerations recommends homostructural growth on TiO2 substrates, where the VO2 brookite phase would be preferentially grown on the a-c TiO2 brookite plane while the columbite and anatase structures favor the a-b plane on the respective TiO2 phases. Overall, we find that a model which incorporates a geometric unit cell area matching between the substrate and the target film as well as the resulting strain energy density of the film provide qualitative agreement with experimental observations for the heterostructural growth of known VO2 polymorphs: rutile, A and B phases. The minimal interfacial geometry matching and estimated strain energy criteria provide several suggestions for substrates and substrate-film orientations for the heterostructural growth of the hitherto hypothetical anatase, brookite, and columbite polymorphs. These criteria serve as a preliminary guidance for the experimental efforts stabilizing new materials and/or polymorphs through epitaxy. The current screening algorithm is being integrated within the Materials Project online framework and data and hence publicly available.

  3. Epitaxial stabilization and phase instability of VO2 polymorphs

    DOE PAGES

    Lee, Shinbuhm; Ivanov, Ilia N.; Keum, Jong K.; ...

    2016-01-20

    The VO2 polymorphs, i.e., VO2(A), VO2(B), VO2(M1) and VO2(R), have a wide spectrum of functionalities useful for many potential applications in information and energy technologies. However, synthesis of phase pure materials, especially in thin film forms, has been a challenging task due to the fact that the VO2 polymorphs are closely related to each other in a thermodynamic framework. Here, we report epitaxial stabilization of the VO2 polymorphs to synthesize high quality single crystalline thin films and study the phase stability of these metastable materials. We selectively deposit all the phases on various perovskite substrates with different crystallographic orientations. Bymore » investigating the phase instability, phonon modes and transport behaviours, not only do we find distinctively contrasting physical properties of the VO2 polymorphs, but that the polymorphs can be on the verge of phase transitions when heated as low as ~400 °C. In conclusion, our successful epitaxy of both VO2(A) and VO2(B) phases, which are rarely studied due to the lack of phase pure materials, will open the door to the fundamental studies of VO2 polymorphs for potential applications in advanced electronic and energy devices.« less

  4. Crystal nucleation and near-epitaxial growth in nacre.

    PubMed

    Olson, Ian C; Blonsky, Adam Z; Tamura, Nobumichi; Kunz, Martin; Pokroy, Boaz; Romao, Carl P; White, Mary Anne; Gilbert, Pupa U P A

    2013-12-01

    Nacre is the iridescent inner lining of many mollusk shells, with a unique lamellar structure at the sub-micron scale, and remarkable resistance to fracture. Despite extensive studies, nacre formation mechanisms remain incompletely understood. Here we present 20-nm, 2°-resolution polarization-dependent imaging contrast (PIC) images of shells from 15 mollusk species, mapping nacre tablets and their orientation patterns. These data show where new crystal orientations appear and how similar orientations propagate as nacre grows. In all shells we found stacks of co-oriented aragonite (CaCO₃) tablets arranged into vertical columns or staggered diagonally. Near the nacre-prismatic (NP) boundary highly disordered spherulitic aragonite is nucleated. Overgrowing nacre tablet crystals are most frequently co-oriented with the underlying aragonite spherulites, or with another tablet. Away from the NP-boundary all tablets are nearly co-oriented in all species, with crystal lattice tilting, abrupt or gradual, always observed and always small (plus or minus 10°). Therefore aragonite crystal growth in nacre is near-epitaxial. Based on these data, we propose that there is one mineral bridge per tablet, and that "bridge tilting" may occur without fracturing the bridge, hence providing the seed from which the next tablet grows near-epitaxially.

  5. Point defects in epitaxial silicene on Ag(111) surfaces

    NASA Astrophysics Data System (ADS)

    Liu, Hongsheng; Feng, Haifeng; Du, Yi; Chen, Jian; Wu, Kehui; Zhao, Jijun

    2016-06-01

    Silicene, a counterpart of graphene, has achieved rapid development due to its exotic electronic properties and excellent compatibility with the mature silicon-based semiconductor technology. Its low room-temperature mobility of ˜100 cm2 V-1 s-1, however, inhibits device applications such as in field-effect transistors. Generally, defects and grain boundaries would act as scattering centers and thus reduce the carrier mobility. In this paper, the morphologies of various point defects in epitaxial silicene on Ag(111) surfaces have been systematically investigated using first-principles calculations combined with experimental scanning tunneling microscope (STM) observations. The STM signatures for various defects in epitaxial silicene on Ag(111) surface are identified. In particular, the formation energies of point defects in Ag(111)-supported silicene sheets show an interesting dependence on the superstructures, which, in turn, may have implications for controlling the defect density during the synthesis of silicene. Through estimating the concentrations of various point defects in different silicene superstructures, the mystery of the defective appearance of \\sqrt{13}× \\sqrt{13} and 2\\sqrt{3}× 2\\sqrt{3} silicene in experiments is revealed, and 4 × 4 silicene sheet is thought to be the most suitable structure for future device applications.

  6. Apparatus for externally controlled closed-loop feedback digital epitaxy

    DOEpatents

    Eres, Djula; Sharp, Jeffrey W.

    1996-01-01

    A method and apparatus for digital epitaxy. The apparatus includes a pulsed gas delivery assembly that supplies gaseous material to a substrate to form an adsorption layer of the gaseous material on the substrate. Structure is provided for measuring the isothermal desorption spectrum of the growth surface to monitor the active sites which are available for adsorption. The vacuum chamber housing the substrate facilitates evacuation of the gaseous material from the area adjacent the substrate following exposure. In use, digital epitaxy is achieved by exposing a substrate to a pulse of gaseous material to form an adsorption layer of the material on the substrate. The active sites on the substrate are monitored during the formation of the adsorption layer to determine if all the active sites have been filled. Once the active sites have been filled on the growth surface of the substrate, the pulse of gaseous material is terminated. The unreacted portion of the gas pulse is evacuated by continuous pumping. Subsequently, a second pulse is applied when availability of active sites is determined by studying the isothermal desorption spectrum. These steps are repeated until a thin film of sufficient thickness is produced.

  7. Apparatus for externally controlled closed-loop feedback digital epitaxy

    DOEpatents

    Eres, D.; Sharp, J.W.

    1996-07-30

    A method and apparatus for digital epitaxy are disclosed. The apparatus includes a pulsed gas delivery assembly that supplies gaseous material to a substrate to form an adsorption layer of the gaseous material on the substrate. Structure is provided for measuring the isothermal desorption spectrum of the growth surface to monitor the active sites which are available for adsorption. The vacuum chamber housing the substrate facilitates evacuation of the gaseous material from the area adjacent the substrate following exposure. In use, digital epitaxy is achieved by exposing a substrate to a pulse of gaseous material to form an adsorption layer of the material on the substrate. The active sites on the substrate are monitored during the formation of the adsorption layer to determine if all the active sites have been filled. Once the active sites have been filled on the growth surface of the substrate, the pulse of gaseous material is terminated. The unreacted portion of the gas pulse is evacuated by continuous pumping. Subsequently, a second pulse is applied when availability of active sites is determined by studying the isothermal desorption spectrum. These steps are repeated until a thin film of sufficient thickness is produced. 5 figs.

  8. Anomalous Fraunhofer interference in epitaxial superconductor-semiconductor Josephson junctions

    NASA Astrophysics Data System (ADS)

    Suominen, H. J.; Danon, J.; Kjaergaard, M.; Flensberg, K.; Shabani, J.; Palmstrøm, C. J.; Nichele, F.; Marcus, C. M.

    2017-01-01

    We investigate patterns of critical current as a function of perpendicular and in-plane magnetic fields in superconductor-semiconductor-superconductor (SNS) junctions based on InAs/InGaAs heterostructures with an epitaxial Al layer. This material system is of interest due to its exceptionally good superconductor-semiconductor coupling, as well as large spin-orbit interaction and g factor in the semiconductor. Thin epitaxial Al allows the application of large in-plane field without destroying superconductivity. For fields perpendicular to the junction, flux focusing results in aperiodic node spacings in the pattern of critical currents known as Fraunhofer patterns by analogy to the related interference effect in optics. Adding an in-plane field yields two further anomalies in the pattern. First, higher-order nodes are systematically strengthened, indicating current flow along the edges of the device, as a result of confinement of Andreev states driven by an induced flux dipole; second, asymmetries in the interference appear that depend on the field direction and magnitude. A model is presented, showing good agreement with experiment, elucidating the roles of flux focusing, Zeeman and spin-orbit coupling, and disorder in producing these effects.

  9. Dewetting of Epitaxial Silver Film on Silicon by Thermal Annealing

    NASA Astrophysics Data System (ADS)

    Sanders, Charlotte E.; Kellogg, Gary L.; Shih, C.-K.

    2013-03-01

    It has been shown that noble metals can grow epitaxially on semiconducting and insulating substrates, despite being a non-wetting system: low temperature deposition followed by room temperature annealing leads to atomically flat film morphology. However, the resulting metastable films are vulnerable to dewetting, which has limited their utility for applications under ambient conditions. The physics of this dewetting is of great interest but little explored. We report on an investigation of the dewetting of epitaxial Ag(111) films on Si(111) and (100). Low energy electron microscopy (LEEM) shows intriguing evolution in film morphology and crystallinity, even at temperatures below 100oC. On the basis of these findings, we can begin to draw compelling inferences about film-substrate interaction and the kinetics of dewetting. Financial support is from NSF, DGE-0549417 and DMR-0906025. This work was performed, in part, at the Center for Integrated Nanotechnologies, User Facility operated for the U.S. DOE Office of Science. Sandia National Lab is managed and operated by Sandia Corp., a subsidiary of Lockheed Martin Corp., for the U.S. DOE's National Nuclear Security Administration under DE-AC04-94AL85000.

  10. Electrochemical characterization of monoclinic and orthorhombic Li3CrF6 as positive electrodes in lithium-ion batteries synthesized by a sol-gel process with environmentally benign chemicals

    NASA Astrophysics Data System (ADS)

    Lieser, Georg; Winkler, Volker; Geßwein, Holger; de Biasi, Lea; Glatthaar, Sven; Hoffmann, M. J.; Ehrenberg, Helmut; Binder, Joachim R.

    2015-10-01

    Lithium transition metal fluorides (Li3MF6; M = Fe, V) with cryolite structure are investigated as positive electrode materials for lithium-ion batteries. A novel sol-gel process with trifluoroacetic acid as fluorine source was used to synthesize monoclinic and orthorhombic Li3CrF6. A ball milling process with Li3CrF6, binder, and conductive agent was applied to form a Li3CrF6 composite, which was electrochemically characterized against lithium metal for the first time. The electrochemical properties of two different modifications are quite similar, with a reversible specific capacity of 111 mAhg-1 for monoclinic Li3CrF6 and 106 mAhg-1 for orthorhombic Li3CrF6 (1 eq. Li ≙ 143 mAhg-1). The electrochemically active redox couple CrIII/CrII was confirmed by X-ray photoelectron spectroscopy.

  11. Growth and characterization of epitaxial silver indium diselenide

    NASA Astrophysics Data System (ADS)

    Pena Martin, Pamela

    Photovoltaics (solar cells) are a key player in the renewable energy frontier, and will become increasingly important as their cost per watt continues to drop, especially if fossil fuel costs increase. One particularly promising photovoltaic technology is based on chalcopyrite-structure semiconductors. Within the chalcopyrite compounds the highest efficiency thin film solar cell absorber material to date is Cu(In,Ga)Se2 (CIGS). While current efficiency records are over 21% for single-junction cells, there is still room for improvement. Replacing some of the Cu with Ag has been shown to be beneficial in CIGS devices. However, the Ag- containing chalcopyrites are still relatively unknown in terms of their growth mechanism, energetics, and surface atomic and electronic properties. These are best inferred through study of epitaxial films, yet they have little mention in literature and have not been the subject of a detailed study. This work describes the growth of epitaxial AgInSe2 (AIS) on GaAs substrates, studying the morphology, structure, and surface properties to understand how growth takes place. It also seeks to experimentally determine the surface electronic and atomic structure at the atomic scale to gain insight into the part of the material that forms the heterojunction that collects photon energy in the device. Finally, this work seeks to compare and contrast these findings with what is known about CIGS to determine where similarities and, more importantly, the differences may lie. This study has found that single phase tetragonal AIS can be epitaxially grown on GaAs, as illustrated by x-ray diffraction (XRD), transmission electron microscope (TEM), and surface morphology data. Like CIGS, the close packed polar (112) planes have the lowest energy. The morphology points to a difference in step dynamics, leading to less faceted, straight edged island shapes compared to CIGS. Epitaxial temperature as a function of growth direction shows a different trend in

  12. Silicon Carbide Epitaxial Films Studied by Atomic Force Microscopy

    NASA Technical Reports Server (NTRS)

    1996-01-01

    Silicon carbide (SiC) holds great potential as an electronic material because of its wide band gap energy, high breakdown electric field, thermal stability, and resistance to radiation damage. Possible aerospace applications of high-temperature, high-power, or high-radiation SiC electronic devices include sensors, control electronics, and power electronics that can operate at temperatures up to 600 C and beyond. Commercially available SiC devices now include blue light-emitting diodes (LED's) and high-voltage diodes for operation up to 350 C, with other devices under development. At present, morphological defects in epitaxially grown SiC films limit their use in device applications. Research geared toward reducing the number of structural inhomogeneities can benefit from an understanding of the type and nature of problems that cause defects. The Atomic Force Microscope (AFM) has proven to be a useful tool in characterizing defects present on the surface of SiC epitaxial films. The in-house High-Temperature Integrated Electronics and Sensors (HTIES) Program at the NASA Lewis Research Center not only extended the dopant concentration range achievable in epitaxial SiC films, but it reduced the concentration of some types of defects. Advanced structural characterization using the AFM was warranted to identify the type and structure of the remaining film defects and morphological inhomogeneities. The AFM can give quantitative information on surface topography down to molecular scales. Acquired, in part, in support of the Advanced High Temperature Engine Materials Technology Program (HITEMP), the AFM had been used previously to detect partial fiber debonding in composite material cross sections. Atomic force microscopy examination of epitaxial SiC film surfaces revealed molecular-scale details of some unwanted surface features. Growth pits propagating from defects in the substrate, and hillocks due, presumably, to existing screw dislocations in the substrates, were

  13. Pseudo-merohedral Twinning and Noncrystallographic Symmetry in Orthorhombic Crystals of SIVmac239 Nef Core Domain Bound to Different-length TCR Fragments

    SciTech Connect

    Kim, W.; Sigalov, A; Stern, L

    2010-01-01

    HIV/SIV Nef mediates many cellular processes through interactions with various cytoplasmic and membrane-associated host proteins, including the signalling subunit of the T-cell receptor (TCR{zeta}). Here, the crystallization strategy, methods and refinement procedures used to solve the structures of the core domain of the SIVmac239 isolate of Nef (Nef{sub core}) in complex with two different TCR{zeta} fragments are described. The structure of SIVmac239 Nef{sub core} bound to the longer TCR{zeta} polypeptide (Leu51-Asp93) was determined to 3.7 {angstrom} resolution (R{sub work} = 28.7%) in the tetragonal space group P4{sub 3}2{sub 1}2. The structure of SIVmac239 Nef{sub core} in complex with the shorter TCR{zeta} polypeptide (Ala63-Arg80) was determined to 2.05 {angstrom} resolution (R{sub work} = 17.0%), but only after the detection of nearly perfect pseudo-merohedral crystal twinning and proper assignment of the orthorhombic space group P2{sub 1}2{sub 1}2{sub 1}. The reduction in crystal space-group symmetry induced by the truncated TCR{zeta} polypeptide appears to be caused by the rearrangement of crystal-contact hydrogen-bonding networks and the substitution of crystallographic symmetry operations by similar noncrystallographic symmetry (NCS) operations. The combination of NCS rotations that were nearly parallel to the twin operation (k, h, -l) and a and b unit-cell parameters that were nearly identical predisposed the P2{sub 1}2{sub 1}2{sub 1} crystal form to pseudo-merohedral twinning.

  14. Synthesis of Orthorhombic Perovskite-Type ZnSnO3 Single-Crystal Nanoplates and Their Application in Energy Harvesting.

    PubMed

    Guo, Runjiang; Guo, Yiping; Duan, Huanan; Li, Hua; Liu, Hezhou

    2017-03-08

    In recent years, lead-free piezoelectric nanogenerators have attracted much attention because of their great potential for harvesting energy from the environment. Here, we report the first synthesis of two-dimensional (2D) single-crystal ZnSnO3 hexagon nanoplates and the fabrication of ZnSnO3 nanoplate-based nanogenerators. The orthorhombic perovskite-structured ZnSnO3 nanoplates with (111) facets of the exposed plate surface are successfully synthesized via a one-step hydrothermal reaction. Piezoelectric nanogenerators are then fabricated using the as-synthesized single-crystal ZnSnO3 nanoplates and poly(dimethylsiloxane) (PDMS). A d33 value as high as 49 pC/N for the ZnSnO3@PDMS composite was obtained without any electrical poling process, which demonstrates that the single-crystal ZnSnO3 nanoplates have a single-domain structure. To the best of our knowledge, this d33 value is also the highest among lead-free piezoelectric composites. A bending strain can induce the piezoelectric nanogenerator (PENG) to generate a large, stable, and sustainable output open circuit voltage of 20 V and a short circuit current of 0.6 μA, which are higher than many other PENGs. The output signals are sufficient to light a single light-emitting diode (LED), which shows the great potential of the material for scavenging mechanical energy from moving entities, such as road vehicles, railway vehicles, and humans.

  15. New structure of high-pressure body-centered orthorhombic Fe2SiO4

    SciTech Connect

    Yamanaka, Takamitsu; Kyono, Atsushi; Nakamoto, Yuki; Kharlamova, Svetlana; Struzhkin, Viktor V.; Gramsch, Stephen A.; Mao, Ho-kwang; Hemley, Russell J.

    2015-08-01

    Here, a structural change in Fe2SiO4 spinel and the structure of a new high pressure phase are determined by Rietveld 26 profile fitting of x-ray diffraction data up to 64 GPa at ambient temperature. The compression curve of the spinel is discontinuous at approximately 20 GPa. Fe Kβ x-ray emission measurements at high pressure show that the transition from a high spin (HS) to an intermediate spin (IS) state begins at 17 GPa in the spinel phase. The IS electronic state is gradually enhanced with pressure, which results in an isostructural phase transition. A transition from the cubic spinel structure to a body centered orthorhombic phase (I-Fe2SiO4) with space group Imma and Z=4 was observed at approximately 34 GPa. The structure of I-Fe2SiO4 has two crystallographically distinct FeO6 octahedra, which are arranged in layers parallel to (101) and (011) and are very similar to the layers of FeO6 octahedra that constitute the spinel structure. Silicon also exists in six-fold coordination in I-Fe2SiO4. The transformation to the new high-pressure phase is reversible under decompression at ambient temperature. A Martensitic transformation of each slab of the spinel structure with translation vector [$\\vec{1/8}$ $\\vec{1/8}$ $\\vec{1/8}$] generates the I-Fe2SiO4 structure. Laser heating of I-Fe2SiO4 at 1500 K results in a decomposition of the material to rhombohedral FeO and SiO2 stishovite.

  16. Magnetic Structures of Orthorhombic Li2M(SO4)2 (M = Co, Fe) and LixFe(SO4)2 (x = 1, 1.5) Phases.

    PubMed

    Lander, Laura; Reynaud, Marine; Rodríguez-Carvajal, Juan; Tarascon, Jean-Marie; Rousse, Gwenaëlle

    2016-11-21

    We report herein on the magnetic properties and structures of orthorhombic Li2M(SO4)2 (M = Co, Fe) and their oxidized phases LixFe(SO4)2 (x = 1, 1.5), which were previously studied as potential cathode materials for Li-ion batteries. The particular structure of these orthorhombic compounds (space group Pbca) consists of a three-dimensional network of isolated MO6 octahedra enabling solely super-super-exchange interactions between transition metals. We studied the magnetic properties of these phases via temperature-dependent susceptibility measurements and applied neutron powder diffraction experiments to solve their magnetic structures. All compounds present an antiferromagnetic long-range ordering of the magnetic spins below their Néel temperature. Their magnetic structures are collinear and follow a spin sequence (+ + - - - - + +), with the time reversal associated with the inversion center, a characteristic necessary for a linear magneto-electric effect. We found that the orientation of the magnetic moments varies with the nature of M. While Li2Co(SO4)2 and Li1Fe(SO4)2 adopt the magnetic space group Pb'c'a', the magnetic space group for Li2Fe(SO4)2 and Li1.5Fe(SO4)2 is P1121'/a, which might hint for a possible monoclinic distortion of their nuclear structure. Moreover we compared the orthorhombic phases to their monoclinic counterparts as well as to the isostructural orthorhombic Li2Ni(SO4)2 compound. Finally, we show that this possible magneto-electric feature is driven by the topology of the magnetic interactions.

  17. Low angle incidence microchannel epitaxy of GaN grown by ammonia-based metal-organic molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Lin, Chia-Hung; Abe, Ryota; Maruyama, Takahiro; Naritsuka, Shigeya

    2011-03-01

    GaN was grown by low angle incidence microchannel epitaxy (LAIMCE) using NH3-based metal-organic molecular beam epitaxy (NH3-based MOMBE). The growth mechanism was studied by varying the growth temperature and time. The effect of the incidence direction of precursors on lateral growth was also investigated by comparing the results obtained when precursors were supplied perpendicular and parallel to the openings in the mask. The thickness and width of lateral growth were largely influenced by the formation of a facet on the surface, which frequently terminates further growth. For example, a sample grown at 700 °C with a perpendicular supply of precursors stopped growing both vertically and laterally after a certain time despite continuous supply of the precursors. On the other hand, a sample grown at 820 °C with a parallel supply of precursors exhibited stable growth, and its width increased continuously with time. This is because inter-surface diffusion of adatoms occurred from the top to the sides, which enhanced the width of lateral growth. In contrast, low angle incidence supply of molecular beams perpendicular to the openings resulted in a Ga-rich condition on the side and formed the side facet, which terminated further LAIMCE growth.

  18. Spin Polarization of Alternate Monatomic Epitaxial [Fe/Co]n Superlattice

    NASA Astrophysics Data System (ADS)

    Chu, In Chang; Doi, Masaaki; Sahashi, Masashi; Rajanikanth, Ammanabrolu; Takahashi, Yukiko; Hono, Kazuhiro

    2012-09-01

    The spin polarization (P) of alternate monatomic layered (AML) epitaxial [Fe/Co]n superlattices grown on MgO(001) substrates by electron beam (EB) evaporation has been measured by the point contact Andreev reflection (PCAR) method. The intrinsic transport P of 0.60 was obtained for the AML epitaxial [Fe/Co]n superlattice grown at 75 °C, which is comparable to that of half-metallic Heusler alloys measured by PCAR. The AML epitaxial [Fe/Co]n superlattices on MgO(001), which are expected to possess the B2 ordered structure, show the highest spin polarization of metallic Fe-Co alloy films.

  19. Top-gate dielectric induced doping and scattering of charge carriers in epitaxial graphene

    NASA Astrophysics Data System (ADS)

    Puls, Conor P.; Staley, Neal E.; Moon, Jeong-Sun; Robinson, Joshua A.; Campbell, Paul M.; Tedesco, Joseph L.; Myers-Ward, Rachael L.; Eddy, Charles R.; Gaskill, D. Kurt; Liu, Ying

    2011-07-01

    We show that an e-gun deposited dielectric impose severe limits on epitaxial graphene-based device performance based on Raman spectroscopy and low-temperature transport measurements. Specifically, we show from studies of epitaxial graphene Hall bars covered by SiO2 that the measured carrier density is strongly inhomogenous and predominantly induced by charged impurities at the grapheme/dielectric interface that limit mobility via Coulomb interactions. Our work emphasizes that material integration of epitaxial graphene and a gate dielectric is the next major road block towards the realization of graphene-based electronics.

  20. Different spin relaxation mechanisms between epitaxial and polycrystalline Ta thin films

    NASA Astrophysics Data System (ADS)

    Gamou, Hiromu; Ryu, Jeongchun; Kohda, Makoto; Nitta, Junsaku

    2017-02-01

    We demonstrate that spin relaxation mechanisms are different between epitaxial Ta and disordered polycrystalline Ta thin films by determining the relationship between spin relaxation time and diffusion constant. To control the diffusion constant, epitaxial Ta and polycrystalline Ta thin films are prepared by sputtering on different substrates and at different growth temperatures. The spin relaxation time is extracted from the results of weak antilocalization analysis including the superconducting fluctuation effect. The dominant spin relaxation mechanism for polycrystalline Ta thin films is the Elliot–Yafet mechanism, as is expected for centrosymmetric metal films. In contrast, the D’yakonov–Perel’ mechanism plays a role in epitaxial Ta thin films.

  1. Line-on-Line Coincidence: A New Type of Epitaxy Found in Organic-Organic Heterolayers

    NASA Astrophysics Data System (ADS)

    Mannsfeld, Stefan C.; Leo, Karl; Fritz, Torsten

    2005-02-01

    We propose a new type of epitaxy, line-on-line coincidence (LOL), which explains the ordering in the organic-organic heterolayer system PTCDA on HBC on graphite. LOL epitaxy is similar to point-on-line coincidence (POL) in the sense that all overlayer molecules lie on parallel, equally spaced lines. The key difference to POL is that these lines are not restricted to primitive lattice lines of the substrate lattice. Potential energy calculations demonstrate that this new type of epitaxy is indeed characterized by a minimum in the overlayer-substrate interaction potential.

  2. Perspective: Rapid synthesis of complex oxides by combinatorial molecular beam epitaxy

    SciTech Connect

    A. T. Bollinger; Wu, J.; Bozovic, I.

    2016-03-15

    In this study, the molecular beam epitaxy(MBE) technique is well known for producing atomically smooth thin films as well as impeccable interfaces in multilayers of many different materials. In particular, molecular beam epitaxy is well suited to the growth of complex oxides, materials that hold promise for many applications. Rapid synthesis and high throughput characterization techniques are needed to tap into that potential most efficiently. We discuss our approach to doing that, leaving behind the traditional one-growth-one-compound scheme and instead implementing combinatorial oxide molecular beam epitaxy in a custom built system.

  3. Molecular beam epitaxy of thin HfTe2 semimetal films

    NASA Astrophysics Data System (ADS)

    Aminalragia-Giamini, S.; Marquez-Velasco, J.; Tsipas, P.; Tsoutsou, D.; Renaud, G.; Dimoulas, A.

    2017-03-01

    Epitaxial thin films of 1T-HfTe2 semimetal are grown by MBE on AlN(0001) substrates. The measured in-plane lattice parameter indicates an unstrained film which is also azimuthally aligned with the AlN substrate, albeit with an in-plane mosaic spread, as it would be expected for van der Waals epitaxy. Angle resolved photoemission spectroscopy combined with first principles electronic band structure calculations show steep linearly dispersing conduction and valence bands which cross near the Brillouin zone center, providing evidence that HfTe2/AlN is an epitaxial topological Dirac semimetal.

  4. Epitaxial Thin Films of Y doped HfO2

    NASA Astrophysics Data System (ADS)

    Serrao, Claudy; Khan, Asif; Ramamoorthy, Ramesh; Salahuddin, Sayeef

    Hafnium oxide (HfO2) is one of a few metal oxides that is thermodynamically stable on silicon and silicon oxide. There has been renewed interest in HfO2 due to the recent discovery of ferroelectricity and antiferroelectricity in doped HfO2. Typical ferroelectrics - such as strontium bismuth tantalate (SBT) and lead zirconium titanate (PZT) - contain elements that easily react with silicon and silicon oxide at elevated temperatures; therefore, such ferroelectrics are not suited for device applications. Meanwhile, ferroelectric HfO2 offers promise regarding integration with silicon. The stable phase of HfO2 at room temperature is monoclinic, but HfO2 can be stabilized in the tetragonal, orthorhombic or even cubic phase by suitable doping. We stabilized Y-doped HfO2 thin films using pulsed laser deposition. The strain state can be controlled using various perovskite substrates and controlled growth conditions. We report on Y-doped HfO2 domain structures from piezo-response force microscopy (PFM) and structural parameters via X-ray reciprocal space maps (RSM). We hope this work spurs further interest in strain-tuned ferroelectricity in doped HfO2.

  5. Electronic cooling via interlayer Coulomb coupling in multilayer epitaxial graphene.

    PubMed

    Mihnev, Momchil T; Tolsma, John R; Divin, Charles J; Sun, Dong; Asgari, Reza; Polini, Marco; Berger, Claire; de Heer, Walt A; MacDonald, Allan H; Norris, Theodore B

    2015-09-24

    In van der Waals bonded or rotationally disordered multilayer stacks of two-dimensional (2D) materials, the electronic states remain tightly confined within individual 2D layers. As a result, electron-phonon interactions occur primarily within layers and interlayer electrical conductivities are low. In addition, strong covalent in-plane intralayer bonding combined with weak van der Waals interlayer bonding results in weak phonon-mediated thermal coupling between the layers. We demonstrate here, however, that Coulomb interactions between electrons in different layers of multilayer epitaxial graphene provide an important mechanism for interlayer thermal transport, even though all electronic states are strongly confined within individual 2D layers. This effect is manifested in the relaxation dynamics of hot carriers in ultrafast time-resolved terahertz spectroscopy. We develop a theory of interlayer Coulomb coupling containing no free parameters that accounts for the experimentally observed trends in hot-carrier dynamics as temperature and the number of layers is varied.

  6. RF Properties of Epitaxial Lift-Off HEMT Devices

    NASA Technical Reports Server (NTRS)

    Young, Paul G.; Alterovitz, Samuel A.; Mena, Rafael A.; Smith, Edwyn D.

    1993-01-01

    Epitaxial layers containing GaAs HEMT and P-HEMT structures have been lifted-off the GaAs substrate and attached to other host substrates using an AlAs parting layer. The devices were on-wafer RF probed before and after the lift-off step showing no degradation in the measured S-parameters. The maximum stable gain indicates a low frequency enhancement of the gain of 1-2 dB with some devices showing an enhancement of F(sub max)F(sub T) consistently shows an increase of 12-20% for all lifted-off HEMT structures. Comparison of the Hall measurements and small signal models show that the gain is improved and this is most probably associated with an enhanced carrier concentration.

  7. Selective epitaxial growth of graphene on SiC

    NASA Astrophysics Data System (ADS)

    Camara, N.; Rius, G.; Huntzinger, J.-R.; Tiberj, A.; Mestres, N.; Godignon, P.; Camassel, J.

    2008-09-01

    We present a method of selective epitaxial growth of few layers graphene (FLG) on a "prepatterned" silicon carbide (SiC) substrate. The methods involves, successively, the sputtering of a thin aluminium nitride (AlN) layer on top of a monocrystalline SiC substrate and, then, patterning it with e-beam lithography and wet etching. The sublimation of few atomic layers of Si from the SiC substrate occurs only through the selectively etched AlN layer. The presence of the Raman G-band at ˜1582cm-1 in the AlN-free areas is used to validate the concept. It gives absolute evidence of selective FLG growth.

  8. Layer Resolved Imaging of Magnetic Domain Motion in Epitaxial Heterostructures

    NASA Astrophysics Data System (ADS)

    Zohar, Sioan; Choi, Yongseong; Love, David; Mansell, Rhodri; Barnes, Crispin; Keavney, David; Rosenberg, Richard

    We use X-ray Excited Luminescence Microscopy (XELM) to image the elemental and layer resolved magnetic domain structure of an epitaxial Fe/Cr wedge/Co heterostructure in the presence of large magnetic fields. The observed magnetic domains exhibit several unique behaviors that depend on the Cr thickness (tCr) modulated interlayer exchange coupling (IEC) strength. For Cr thickness tCr??1.5?nm, strongly coupled parallel Co-Fe reversal and weakly coupled layer independent reversal are observed, respectively. The transition between these two reversal mechanisms for 0.34?

  9. 1/f Noise in Gated Epitaxial Graphene Nanoribbons

    NASA Astrophysics Data System (ADS)

    Vail, Owen; Yang, Jeremy; Miettinen, Anna; Hankinson, John; Berger, Claire; de Heer, Walter; Jiang, Zhigang

    Epitaxial Graphene Nanoribbons (EGNR) grown on sidewall SiC have gained interest as a high-quality interconnect enabling room temperature ballistic transport over micron lengths. To be useful as an interconnect a proper characterization of the noise level in the EGNR needs to be determined. Toward this end, we fabricated EGNR devices with an Aluminum-Oxide top gate and use field effect to tune the fermi energy in the graphene channel. Our studies of the electronic noise and its dependence on the charge density in the ribbon reveal information about the subband structure of the density of states in addition to the ribbon's spectral density at low frequencies. Comparisons to the widely reported 1/f noise in silicon and other forms of graphene provide strong references for analyzing our results.

  10. Chemical beam epitaxy growth of III-V semiconductor nanowires

    NASA Astrophysics Data System (ADS)

    Mohummed Noori, Farah T.

    2013-12-01

    Indium- Arsenide (InAs) nanowires were grown in a high vacuum chemical beam epitaxy (CBE) unit on InAs(111) wafers substrates at 425-454°C. Two types of nanogold were used as orientation catalyst, 40nm and 80nm. The measurements were performed using scanning electron microscopy showed that uniform nanowires. The nanowires orient vertically in the InAs nanowire scanning electron microscopy of an array 80nm diameter InAs nanowire with length is in the range 0.5-1 μm and of an array 40nm diameter with length is in the range 0.3-0.7μm. The nanowire length with growth time shows that the linear increase of nanowires start to grow as soon as TMIn is available. The growth rate with temperature was studied.

  11. Chemical beam epitaxy growth of III–V semiconductor nanowires

    SciTech Connect

    Mohummed Noori, Farah T.

    2013-12-16

    Indium- Arsenide (InAs) nanowires were grown in a high vacuum chemical beam epitaxy (CBE) unit on InAs(111) wafers substrates at 425–454°C. Two types of nanogold were used as orientation catalyst, 40nm and 80nm. The measurements were performed using scanning electron microscopy showed that uniform nanowires. The nanowires orient vertically in the InAs nanowire scanning electron microscopy of an array 80nm diameter InAs nanowire with length is in the range 0.5–1 μm and of an array 40nm diameter with length is in the range 0.3–0.7μm. The nanowire length with growth time shows that the linear increase of nanowires start to grow as soon as TMIn is available. The growth rate with temperature was studied.

  12. Reverse Epitaxy of Ge: Ordered and Faceted Surface Patterns

    NASA Astrophysics Data System (ADS)

    Ou, Xin; Keller, Adrian; Helm, Manfred; Fassbender, Jürgen; Facsko, Stefan

    2013-07-01

    Normal incidence ion irradiation at elevated temperatures, when amorphization is prevented, induces novel nanoscale patterns of crystalline structures on elemental semiconductors by a reverse epitaxial growth mechanism: on Ge surfaces irradiation at temperatures above the recrystallization temperature of 250°C leads to self-organized patterns of inverse pyramids. Checkerboard patterns with fourfold symmetry evolve on the Ge (100) surface, whereas on the Ge (111) surface, isotropic patterns with a sixfold symmetry emerge. After high-fluence irradiations, these patterns exhibit well-developed facets. A deterministic nonlinear continuum equation accounting for the effective surface currents due to an Ehrlich-Schwoebel barrier for diffusing vacancies reproduces remarkably well our experimental observations.

  13. GaAs/Ge/Si epitaxial substrates: Development and characteristics

    NASA Astrophysics Data System (ADS)

    Buzynin, Yury; Shengurov, Vladimir; Zvonkov, Boris; Buzynin, Alexander; Denisov, Sergey; Baidus, Nikolay; Drozdov, Michail; Pavlov, Dmitry; Yunin, Pavel

    2017-01-01

    We developed high quality 2-inch GaAs/Ge/Si (100) epitaxial substrates, which may be used instead of GaAs monolithic substrates for fabrication of solar cells, photodetectors, LEDs, lasers, etc. A 200-300 nm Ge buffer layer was grown on Si substrates using the HW-CVD technique at 300°C, a tantalum strip heated to 1400°C was used as the "hotwire". The MOCVD method was used to grow a 1 μ GaAs layer on a Ge buffer. The TDD in the GaAs layers did not exceed (1-2)•105 cm-2 and the surface RMS roughness value was under 1 nm.

  14. Novel all-high Tc epitaxial Josephson junction

    NASA Astrophysics Data System (ADS)

    Chin, D. K.; van Duzer, T.

    1991-02-01

    Josephson junctions are essential components in high-temperature superconductive integrated circuits. YBaCuO/Nb-doped SrTiO3/YBaCuO epitaxial Josephson junctions have been designed, fabricated, and tested. The YBaCuO and Nb-doped SrTiO3 films were deposited by off-axis sputtering. Both dc and ac Josephson effects have been observed and the supercurrent persists up to 80 K. The critical current density is an exponential function of the barrier layer thickness. The product of critical current and normal resistance is between one and three millivolts. A superconducting quantum interference device made of the junctions displays magnetic field modulation of critical current.

  15. InPBi single crystals grown by molecular beam epitaxy.

    PubMed

    Wang, K; Gu, Y; Zhou, H F; Zhang, L Y; Kang, C Z; Wu, M J; Pan, W W; Lu, P F; Gong, Q; Wang, S M

    2014-06-26

    InPBi was predicted to be the most robust infrared optoelectronic material but also the most difficult to synthesize within In-VBi (V = P, As and Sb) 25 years ago. We report the first successful growth of InPBi single crystals with Bi concentration far beyond the doping level by gas source molecular beam epitaxy. The InPBi thin films reveal excellent surface, structural and optical qualities making it a promising new III-V compound family member for heterostructures. The Bi concentration is found to be 2.4 ± 0.4% with 94 ± 5% Bi atoms at substitutional sites. Optical absorption indicates a band gap of 1.23 eV at room temperature while photoluminescence shows unexpectedly strong and broad light emission at 1.4-2.7 μm which can't be explained by the existing theory.

  16. Graphitic carbon grown on fluorides by molecular beam epitaxy.

    PubMed

    Jerng, Sahng-Kyoon; Lee, Jae Hong; Kim, Yong Seung; Chun, Seung-Hyun

    2013-01-03

    We study the growth mechanism of carbon molecules supplied by molecular beam epitaxy on fluoride substrates (MgF2, CaF2, and BaF2). All the carbon layers form graphitic carbon with different crystallinities depending on the cation. Especially, the growth on MgF2 results in the formation of nanocrystalline graphite (NCG). Such dependence on the cation is a new observation and calls for further systematic studies with other series of substrates. At the same growth temperature, the NCG on MgF2 has larger clusters than those on oxides. This is contrary to the general expectation because the bond strength of the carbon-fluorine bond is larger than that of the carbon-oxygen bond. Our results show that the growth of graphitic carbon does not simply depend on the chemical bonding between the carbon and the anion in the substrate.

  17. Effects of shutter transients in molecular beam epitaxy.

    PubMed

    Gozu, Shin-Ichiro; Mozume, Teruo; Kuwatsuka, Haruhiko; Ishikawa, Hiroshi

    2012-11-12

    : We have studied the effects of shutter transients (STs) in molecular beam epitaxy (MBE). Two series of samples were grown by MBE and evaluated by X-ray diffraction (XRD) and X-ray reflectivity (XRR) measurements. The effects of STs were evaluated by growth rate (GR) analysis using a combination of growth time (GT) and thickness evaluated by XRD and XRR measurements. We revealed two opposite effects of STs: (1) overshoot of GR and (2) increase in GR with GT and subsequent saturation. Each effect was consistent with the previous studies; however, the previous studies showed no relationships between these two effects. By considering closing time of the shutter, the two opposite effects were well understood.

  18. Selective epitaxial growth of graphene on SiC

    SciTech Connect

    Camara, N.; Rius, G.; Godignon, P.; Huntzinger, J.-R.; Tiberj, A.; Camassel, J.

    2008-09-22

    We present a method of selective epitaxial growth of few layers graphene (FLG) on a ''prepatterned'' silicon carbide (SiC) substrate. The methods involves, successively, the sputtering of a thin aluminium nitride (AlN) layer on top of a monocrystalline SiC substrate and, then, patterning it with e-beam lithography and wet etching. The sublimation of few atomic layers of Si from the SiC substrate occurs only through the selectively etched AlN layer. The presence of the Raman G-band at {approx}1582 cm{sup -1} in the AlN-free areas is used to validate the concept. It gives absolute evidence of selective FLG growth.

  19. Implanted bottom gate for epitaxial graphene on silicon carbide

    NASA Astrophysics Data System (ADS)

    Waldmann, D.; Jobst, J.; Fromm, F.; Speck, F.; Seyller, T.; Krieger, M.; Weber, H. B.

    2012-04-01

    We present a technique to tune the charge density of epitaxial graphene via an electrostatic gate that is buried in the silicon carbide substrate. The result is a device in which graphene remains accessible for further manipulation or investigation. Via nitrogen or phosphor implantation into a silicon carbide wafer and subsequent graphene growth, devices can routinely be fabricated using standard semiconductor technology. We have optimized samples for room temperature as well as for cryogenic temperature operation. Depending on implantation dose and temperature we operate in two gating regimes. In the first, the gating mechanism is similar to a MOSFET, the second is based on a tuned space charge region of the silicon carbide semiconductor. We present a detailed model that describes the two gating regimes and the transition in between.

  20. Compensation in epitaxial cubic SiC films

    NASA Technical Reports Server (NTRS)

    Segall, B.; Alterovitz, S. A.; Haugland, E. J.; Matus, L. G.

    1986-01-01

    Hall measurements on four n-type cubic SiC films epitaxially grown by chemical vapor deposition on SiC substrates are reported. The temperature dependent carrier concentrations indicate that the samples are highly compensated. Donor ionization energies, E sub D, are less than one half the values previously reported. The values for E sub D and the donor concentration N sub D, combined with results for small bulk platelets with nitrogen donors, suggest the relation E sub D (N sub D) = E sub D(O) - alpha N sub N sup 1/3 for cubic SiC. A curve fit gives alpha is approx 2.6x10/5 meV cm and E sub D (O) approx 48 meV, which is the generally accepted value of E sub D(O) for nitrogen donors in cubic SiC.

  1. Hard gap in epitaxial semiconductor-superconductor nanowires.

    PubMed

    Chang, W; Albrecht, S M; Jespersen, T S; Kuemmeth, F; Krogstrup, P; Nygård, J; Marcus, C M

    2015-03-01

    Many present and future applications of superconductivity would benefit from electrostatic control of carrier density and tunnelling rates, the hallmark of semiconductor devices. One particularly exciting application is the realization of topological superconductivity as a basis for quantum information processing. Proposals in this direction based on the proximity effect in semiconductor nanowires are appealing because the key ingredients are currently in hand. However, previous instances of proximitized semiconductors show significant tunnelling conductance below the superconducting gap, suggesting a continuum of subgap states--a situation that nullifies topological protection. Here, we report a hard superconducting gap induced by the proximity effect in a semiconductor, using epitaxial InAs-Al semiconductor-superconductor nanowires. The hard gap, together with favourable material properties and gate-tunability, makes this new hybrid system attractive for a number of applications, as well as fundamental studies of mesoscopic superconductivity.

  2. Growing Epitaxial Graphene on an Insulator by MBE

    NASA Astrophysics Data System (ADS)

    Mohapatra, Chandra; Eckstein, James

    2009-03-01

    We have used electron beam evaporation of solid carbon (C) to deposit graphene on MgO <111> at 850C. The growth appears epitaxial as observed by in-situ RHEED which also reveals that the hot scattering surface transitions from an insulator to a conductor after deposition of 1 monolayer of C. Growth at higher temperatures gives better crystallinity. We further characterize the film by ex-situ Raman spectroscopy, AFM and transport. Raman reveals all the characteristic G, D and 2D peaks of graphene and the 2D peak can be fit to a single lorentzian typical for graphene. AFM pictures show that the surface consists of flat connected domains, which are uniform across the substrate. Electrical transport shows insulating behavior with resistance (R) varying as 1/T^2. This work was supported by the DOE BES at the F. Seitz Materials Research Laboratory at the University of Illinois, Urbana.

  3. Hyperfine-field spectrum of epitaxially grown bcc cobalt

    NASA Astrophysics Data System (ADS)

    Riedi, P. C.; Dumelow, T.; Rubinstein, M.; Prinz, G. A.; Qadri, S. B.

    1987-09-01

    The hyperfine-field spectrum of the bcc phase of a 357-romanÅ-thick metallic cobalt film, epitaxially grown on a GaAs substrate, has been determined by spin-echo nuclear magnetic resonance. The peak of the distribution of hyperfine fields in bcc Co occurs at 167 MHz, much lower than the value found for fcc Co (217 MHz), suggesting that the moment in the bcc phase is lower than that of the fcc phase, in agreement with the measurements of Prinz, but in disagreement with recent theoretical calculations (assuming that no significant structural differences exist between theory and experiment). The full width of the distribution is 75 MHz, seven times greater than that found in thin fcc Co films. X-ray rocking-curve measurements yield a linewidth of 118 arc seconds, implying too low a dislocation density to explain the observed NMR line broadening.

  4. Atomic scale structure investigations of epitaxial Fe/Cr multilayers

    NASA Astrophysics Data System (ADS)

    Kąc, M.; Morgiel, J.; Polit, A.; Zabila, Y.; Marszałek, M.

    2014-06-01

    Fe/Cr multilayers were deposited by molecular beam epitaxy on the MgO(1 0 0) substrate. Structural properties of the samples were analyzed by low energy electron diffraction, high resolution transmission electron microscopy (HRTEM), as well as by X-ray reflectivity, conversion electron Mössbauer spectroscopy (CEMS) and Auger electron spectroscopy. Investigations revealed multilayered system built of well-ordered Fe and Cr thin films with (1 0 0) orientation. A high geometrical perfection of the system, i.e. planar form of interfaces and reproducible thickness of layers, was also proven. Fe/Cr interface roughness was determined to be 2-3 atomic layers. CEMS studies allowed to analyze at atomic scale the structure of buried Fe/Cr interfaces, as well as to distinguish origin of interface roughness. Roughnesses resulting from interface corrugations and from the Fe-Cr interdiffusion at interfaces were observed. Fe/Cr multilayers showed strong antiferromagnetic coupling of Fe layers.

  5. Electronic cooling via interlayer Coulomb coupling in multilayer epitaxial graphene

    PubMed Central

    Mihnev, Momchil T.; Tolsma, John R.; Divin, Charles J.; Sun, Dong; Asgari, Reza; Polini, Marco; Berger, Claire; de Heer, Walt A.; MacDonald, Allan H.; Norris, Theodore B.

    2015-01-01

    In van der Waals bonded or rotationally disordered multilayer stacks of two-dimensional (2D) materials, the electronic states remain tightly confined within individual 2D layers. As a result, electron–phonon interactions occur primarily within layers and interlayer electrical conductivities are low. In addition, strong covalent in-plane intralayer bonding combined with weak van der Waals interlayer bonding results in weak phonon-mediated thermal coupling between the layers. We demonstrate here, however, that Coulomb interactions between electrons in different layers of multilayer epitaxial graphene provide an important mechanism for interlayer thermal transport, even though all electronic states are strongly confined within individual 2D layers. This effect is manifested in the relaxation dynamics of hot carriers in ultrafast time-resolved terahertz spectroscopy. We develop a theory of interlayer Coulomb coupling containing no free parameters that accounts for the experimentally observed trends in hot-carrier dynamics as temperature and the number of layers is varied. PMID:26399955

  6. Urbach absorption edge in epitaxial erbium-doped silicon

    SciTech Connect

    Shmagin, V. B. Kudryavtsev, K. E.; Shengurov, D. V.; Krasilnik, Z. F.

    2015-02-07

    We investigate the dependencies of the photocurrent in Si:Er p-n junctions on the energy of the incident photons. The exponential absorption edge (Urbach edge) just below fundamental edge of silicon was observed in the absorption spectra of epitaxial Si:Er layers grown at 400–600 C. It is shown that the introduction of erbium significantly enhances the structural disorder in the silicon crystal which was estimated from the slope of the Urbach edge. We discuss the possible nature of the structural disorder in Si:Er and a new mechanism of erbium excitation, which does not require the presence of deep levels in the band gap of silicon.

  7. High-speed epitaxy using supersonic molecular jets

    SciTech Connect

    Eres, D.

    1990-01-01

    This paper discusses the use of supersonic jets of gaseous source molecules in thin films growth. Molecular jets in free form with no skimmers or collimators in the nozzle-substrate path were used in the investigation of basic film growth processes and in practical film growth applications. The Ge growth rates were found to depend linearly on the digermane jet intensity. Furthermore, the film thickness distributions showed excellent agreement with the distribution of digermane molecules in the jet. High epitaxial Ge growth rates were achieved on GaAs (100) substrates by utilizing high-intensity pulsed jets. The practical advantages and limitations of this film growth technique are evaluated, based on the results of microstructural and electrical measurements of heteroepitaxial Ge films on GaAs (100) substrates. 8 refs., 4 figs.

  8. Indium antimonide doped with manganese grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Partin, D. L.; Heremans, J.; Thrush, C. M.

    1997-05-01

    Indium antimonide is of interest for infrared detecting and emitting devices and for magnetic field sensors. In this study, indium antimonide doped with manganese and grown by molecular beam epitaxy was investigated. Secondary ion mass spectroscopy (SIMS) was used to show that the incorporation of managenese is near unity over a wide range of manganese concentrations. Manganese is observed to be an acceptor with a dopant efficiency which follows a power law in which the hole density is proportional to the manganese concentration raised to the power α. The power α depends on the growth temperature; at 300°C, α = 0.86 and at 360°C, α = 0.78. Lightly manganese doped samples have transport dominated by electrons at low temperatures due to hole freeze out, followed by holes at intermediate temperatures and finally by intrinsic electrons at high temperatures. Additional SIMS studies showed that manganese diffuses relatively slowly in indium antimonide.

  9. Bilayer-induced asymmetric quantum Hall effect in epitaxial graphene

    NASA Astrophysics Data System (ADS)

    Iagallo, Andrea; Tanabe, Shinichi; Roddaro, Stefano; Takamura, Makoto; Sekine, Yoshiaki; Hibino, Hiroki; Miseikis, Vaidotas; Coletti, Camilla; Piazza, Vincenzo; Beltram, Fabio; Heun, Stefan

    2015-05-01

    The transport properties of epitaxial graphene on SiC(0001) at quantizing magnetic fields are investigated. Devices patterned perpendicularly to SiC terraces clearly exhibit bilayer inclusions distributed along the substrate step edges. We show that the transport properties in the quantum Hall regime are heavily affected by the presence of bilayer inclusions, and observe a significant departure from the conventional quantum Hall characteristics. In particular, we observe anomalous values of the quantized resistance and a peculiar asymmetry with magnetic field which was not observed before for graphene on SiC. A quantitative model involving enhanced inter-channel scattering mediated by the presence of bilayer inclusions is presented that successfully explains the observed symmetry properties.

  10. Magnetic x-ray dichroism in ultrathin epitaxial films

    SciTech Connect

    Tobin, J.G.; Goodman, K.W.; Cummins, T.R.

    1997-04-01

    The authors have used Magnetic X-ray Linear Dichroism (MXLD) and Magnetic X-ray Circular Dichroism (MXCD) to study the magnetic properties of epitaxial overlayers in an elementally specific fashion. Both MXLD and MXCD Photoelectron Spectroscopy were performed in a high resolution mode at the Spectromicroscopy Facility of the ALS. Circular Polarization was obtained via the utilization of a novel phase retarder (soft x-ray quarter wave plate) based upon transmission through a multilayer film. The samples were low temperature Fe overlayers, magnetic alloy films of NiFe and CoNi, and Gd grown on Y. The authors results include a direct comparison of high resolution angle resolved Photoelectron Spectroscopy performed in MXLD and MXCD modes as well as structural studies with photoelectron diffraction.

  11. Reversible metal-hydride phase transformation in epitaxial films.

    PubMed

    Roytburd, Alexander L; Boyerinas, Brad M; Bruck, Hugh A

    2015-03-11

    Metal-hydride phase transformations in solids commonly proceed with hysteresis. The extrinsic component of hysteresis is the result of the dissipation of energy of internal stress due to plastic deformation and fracture. It can be mitigated on the nanoscale, where plastic deformation and fracture are suppressed and the transformation proceeds through formation and evolution of coherent phases. However, the phase coherency introduces intrinsic thermodynamic hysteresis, preventing reversible transformation. In this paper, it is shown that thermodynamic hysteresis of coherent metal-hydride transformation can be eliminated in epitaxial film due to substrate constraint. Film-substrate interaction leads to formation of heterophase polydomain nanostructure with variable phase fraction which can change reversibly by varying temperature in a closed system or chemical potential in an open system.

  12. Porous ZnO nanonetworks grown by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Lee, W. C. T.; Kendrick, C. E.; Millane, R. P.; Liu, Z.; Ringer, S. P.; Washburn, K.; Callaghan, P. T.; Durbin, S. M.

    2012-04-01

    Plasma-assisted molecular beam epitaxy was employed to create porous nanonetworks of ZnO directly on GaN epilayers without the use of catalysts or templates. Detailed analysis of scanning electron microscopy (SEM) images of both as-grown and etched samples reveals that the typical porous nanonetwork structure is multilayered, and suggests that dislocations originating at the GaN/sapphire heterointerface and/or defects characterizing an unusually rough GaN surface are responsible. The pore size distribution of the nanonetwork was measured using nuclear magnetic resonance (NMR) cryoporometry. A bimodal pore size distribution centred at 4 nm and 70 nm, respectively, was observed, consistent with the existence of small nanoscale pores in the bulk of the sample, and large open pores on the surface of the porous nanonetwork as observed by SEM.

  13. Reversible metal-hydride phase transformation in epitaxial films

    NASA Astrophysics Data System (ADS)

    Roytburd, Alexander L.; Boyerinas, Brad M.; Bruck, Hugh A.

    2015-03-01

    Metal-hydride phase transformations in solids commonly proceed with hysteresis. The extrinsic component of hysteresis is the result of the dissipation of energy of internal stress due to plastic deformation and fracture. It can be mitigated on the nanoscale, where plastic deformation and fracture are suppressed and the transformation proceeds through formation and evolution of coherent phases. However, the phase coherency introduces intrinsic thermodynamic hysteresis, preventing reversible transformation. In this paper, it is shown that thermodynamic hysteresis of coherent metal-hydride transformation can be eliminated in epitaxial film due to substrate constraint. Film-substrate interaction leads to formation of heterophase polydomain nanostructure with variable phase fraction which can change reversibly by varying temperature in a closed system or chemical potential in an open system.

  14. Magnetoresistive junctions based on epitaxial graphene and h-BN

    NASA Astrophysics Data System (ADS)

    Yazyev, Oleg; Pasquarello, Alfredo

    2009-03-01

    Using a first-principles approach, we investigate the structural, magnetic and transport properties of interfaces based on epitaxially grown monolayer graphene and hexagonal boron nitride (h-BN) in combination with ferromagnetic transition metals (Fe, Co and Ni). Such structurally well defined interfaces based on (111) fcc or (0001) hcp transition metals can be produced using simple manufacturing processes. Our calculations predict magnetoresistance ratios over 100% for certain junction compositions. In addition, such systems feature strong antiparallel (Fe and Co) and parallel (Ni) exchange coupling across the interface combined with low junction resistance. The predicted properties position such magnetoresistive junctions as an interesting alternative to the currently used giant and tunneling magnetoresistance systems and make them suitable for practical applications.

  15. Precise Identification of Graphene's Crystal Structures by Removable Nanowire Epitaxy.

    PubMed

    Kim, Jonghyeok; Lim, Kitaek; Lee, Yangjin; Kim, Jongin; Kim, Kihwan; Park, Jungwon; Kim, Kwanpyo; Lee, Won Chul

    2017-03-16

    Monitoring crystallographic orientations of graphene is important for the reliable generation of graphene-based nanostructures such as van der Waals heterostructures and graphene nanoribbons because their physical properties are dependent on crystal structures. However, facile and precise identification of graphene's crystallographic orientations is still challenging because the majority of current tools rely on complex atomic-scale imaging. Here, we present an identification method for the crystal orientations and grain boundaries of graphene using the directional alignment between epitaxially grown AuCN nanowires and the underlying graphene. Because the nanowires are visible in scanning electron microscopy, crystal orientations of graphene can be inspected with simple procedures. Kernel density estimation that we used in analyzing the nanowire directions enables precise measurement of graphene's crystal orientations. We also confirm that the imaged nanowires can be simply removed without degrading graphene's quality, thus showing that the present method can be practically used for measuring graphene's crystal structures.

  16. Metallic impurities in gallium nitride grown by molecular beam epitaxy

    SciTech Connect

    McHugo, S.A.; Krueger, J.; Kisielowski, C.

    1997-04-01

    Transition metals are often encountered in trace amounts in semiconductors. They have been extensively studied in most elemental and compound systems, since they form deep donor and/or acceptor levels which usually degrade the electronic and optical material properties. Only very little is known about transition metals in recent III-V semiconducting materials, such as GaN, AlN and InN. These few studies have been done exclusively on Metal-Organic Chemical Vapor Deposition (MOCVD) or Hybrid Vapor Phase Epitaxy HVPE-grown GaN. Preliminary x-ray fluorescence studies at the Advanced Light Source, beamline 10.3.1, Lawrence Berkeley National Laboratory have revealed that GaN materials grown by Molecular Beam Epitaxy (MBE) have Fe, Ni and Cr as the dominant transition metal contaminants. This finding is commensurate with the extremely high concentrations of hydrogen, carbon and oxygen (up to 10{sup 20} cm{sup {minus}3}) measured by Secondary Ion Mass Spectroscopy (SIMS). Preliminary work using the mapping capabilities of the x-ray fluorescence microprobe revealed the metal impurities were inhomogeneously distributed over the film. Future work of this collaboration will be to find a correlation between the existence of transition metals in MBE films, as revealed by x-ray fluorescence, and Photoluminescence (PL) spectra taken in the infrared region. Also, the authors will make use of the 1 {mu}m spatial resolution of x-ray microprobe to locate the contaminants in relation to structural defects in the GaN films. Because of the large strain caused by the lattice mismatch between the GaN films and the substrates, the films grow in a columnar order with high densities of grain boundaries and dislocations. These structural defects offer preferential sites for metal precipitation or agglomeration which could degrade the optical properties of this material more so than if the impurities were left dissolved in the GaN.

  17. Integration of Multifunctional Epitaxial Oxide Heterostructures with Si(001)

    NASA Astrophysics Data System (ADS)

    Singamaneni, Srinivasa Rao; Prater, John; Narayan, Jay

    Multifunctional heterostructures exhibit a wide range of functional properties, including colossal magneto-resistance, multiferroic behavior, and spin, charge, and orbital ordering. However, putting this functionality to work remains a challenge. To date, most of the previous works reported in the literature have dealt with heterostructures deposited on closely lattice matched (using lattice matching epitaxy-LME) insulating substrates such as DyScO3, NdGaO3, MgO, SrTiO3 and MBE-grown STO buffered Si(100). This presentation discusses the major advances in the integration of multifunctional oxide materials onto ubiquitous silicon semiconductor platform reported1-6 in the recent past by the presenting authors using a novel thin film growth approach, called `domain matching epitaxy'(DME), which minimizes the strain and nucleation of unwanted defects. The DME paradigm has been used across the large misfit scale (7-25%). Of particular interest, thin film heterostructures including two-phase multiferroics such as BiFeO3(BFO)/La0.7Sr0.3MnO3 (LSMO), BaTiO3(BTO)/LSMO, and LSMO/SrRuO3(SRO). These significant materials advancements may herald a flurry of exciting new advances in CMOS-compatible multifunctional devices.1S. S. Rao,et al.,Nano Letters 13, 5814 (2013); J. Appl. Phys., 116, 094103 (2014); J. Appl. Phys., 116, 224104 (2014); J. Appl. Phys., 117, 17D908 (2015); 5J. Appl. Phys., 117, 17B711 (2015); 6Current Opinion in Solid State and Materials Science. 19, 301-304 (2015).

  18. Crystal structures of orthorhombic, hexagonal, and cubic compounds of the Sm{sub (x)}Yb{sub (2−x)}TiO{sub 5} series

    SciTech Connect

    Aughterson, Robert D.; Lumpkin, Gregory R.; Reyes, Massey de los; Sharma, Neeraj; Ling, Christopher D.; Gault, Baptiste; Smith, Katherine L.; Avdeev, Maxim; Cairney, Julie M.

    2014-05-01

    A series of single phase compounds with nominal stoichiometry Sm{sub (x)}Yb{sub (2−x)}TiO{sub 5} (x=2, 1.4, 1, 0.6, and 0) have been successfully fabricated to generate a range of crystal structures covering the most common polymorphs previously discovered in the Ln{sub 2}TiO{sub 5} series (Ln=lanthanides and yttrium). Four of the five samples have not been previously fabricated in bulk, single phase form so their crystal structures are refined and detailed using powder synchrotron and single crystal x-ray diffraction, neutron diffraction and transmission electron microscopy. Based on the phase information from diffraction data, there are four crystal structure types in this series; orthorhombic Pnma, hexagonal P6{sub 3}/mmc, cubic (pyrochlore-like) Fd-3m and cubic (fluorite-like) Fm-3m. The cubic materials show modulated structures with variation between long and short range ordering and the variety of diffraction techniques were used to describe these complex crystal structure types. - Graphical abstract: A high resolution image of the compound Sm{sub 0.6}Yb{sub 1.4}TiO{sub 5} showing contrast from lattice fringes and the corresponding fast Fourier transform (FFT) of the HREM image with pyrochlore related diffraction spots marked “P” and fluorite marked “F”. The crystal is oriented down the [1 1 0] zone axis based on the Fd-3m structure. The ideal crystal structure (no vacancies) of the cubic, pyrochlore-like (Sm{sub 0.6}Yb{sub 1.4}TiO{sub 5}). - Highlights: • First fabrication of bulk single-phase material with stoichiometry Sm{sub 2}TiO{sub 5}. • Systematic study of crystal structure types within Ln{sub 2}TiO{sub 5} series (Ln=lanthanides). • A novel technique using IFFT of HREM images to study cubic structures.

  19. Epitaxial growth of magnetic ZnCuO thin films by pulsed laser deposition

    NASA Astrophysics Data System (ADS)

    Kim, Dong Hun; Kim, Tae Cheol; Lee, Seung Han; Jung, Hyun Kyu; Jeong, Jaeeun; Han, Seung Ho

    2017-02-01

    The crystal structure and magnetic properties of epitaxial ZnO thin films doped with 5 at% Cu on SrTiO3 (001) and (111) substrates were investigated. In the case of films deposited in oxygen, unique crystallographic growth directions on different substrates were observed, while a metallic phase was detected in films grown under vacuum. The Cu-doped ZnO thin films deposited on the SrTiO3 (111) substrates, with hexagonal structures, showed a single epitaxial relationship with the substrates, whereas those deposited on the SrTiO3 (001) substrates showed a double epitaxial growth mode. The epitaxial ZnCuO thin films deposited on the SrTiO3 (111) substrates under high vacuum exhibited a ferromagnetic signal at room temperature.

  20. The role of Energy Deposition in the Epitaxial Layer in Triggering SEGR in Power MOSFETs

    NASA Technical Reports Server (NTRS)

    Selva, L.; Swift, G.; Taylor, W.; Edmonds, L.

    1999-01-01

    In these SEGR experiments, three identical-oxide MOSFET types were irradiated with six ions of significantly different ranges. Results show the prime importance of the total energy deposited in the epitaxial layer.

  1. Epitaxy of Ge-Sb-Te phase-change memory alloys

    SciTech Connect

    Braun, Wolfgang; Shayduk, Roman; Flissikowski, Timur; Ramsteiner, Manfred; Grahn, Holger T.; Riechert, Henning; Fons, Paul; Kolobov, Alex

    2009-01-26

    The authors demonstrate the epitaxy of Ge-Sb-Te alloys close to the Ge{sub 2}Sb{sub 2}Te{sub 5} composition on GaSb(001). Using molecular beam epitaxy with elemental sources, amorphous films are obtained at growth temperatures below 120 deg. C and films with a cubic structure and a predominant cube-on-cube epitaxial relationship above 180 deg. C. Using a high-power pulsed laser, the epitaxial films are switched between the crystalline and the amorphous phases. Streaks in the diffraction data help to resolve the apparent ambiguity in interatomic distances between earlier x-ray absorption and powder diffraction measurements. The structural changes are confirmed by Raman spectroscopy.

  2. Understanding controls on interfacial wetting at epitaxial graphene: Experiment and Theory

    SciTech Connect

    Kent, Paul R

    2011-01-01

    The interaction of interfacial water with graphitic carbon at the atomic scale is studied as a function of the hydrophobicity of epitaxial graphene. High resolution x-ray reflectivity shows that the graphene-water contact angle is controlled by the average graphene thickness, due to the fraction of the film surface expressed as the epitaxial buffer layer whose contact angle (contact angle {Theta}{sub c} = 73{sup o}) is substantially smaller than that of multilayer graphene ({Theta}{sub c} = 93{sup o}). Classical and ab initio molecular dynamics simulations show that the reduced contact angle of the buffer layer is due to both its epitaxy with the SiC substrate and the presence of interfacial defects. This insight clarifies the relationship between interfacial water structure and hydrophobicity, in general, and suggests new routes to control interface properties of epitaxial graphene.

  3. Molecular Beam Epitaxy Growth and Characterization of Thin Layers of Semiconductor Tin

    DTIC Science & Technology

    2016-09-01

    heating. The α-Sn layers were also characterized with high-resolution X-ray diffraction, Hall, and atomic force microscopy (AFM) measurements...ARL-TR-7838 ● SEP 2016 US Army Research Laboratory Molecular Beam Epitaxy Growth and Characterization of Thin Layers of...Laboratory Molecular Beam Epitaxy Growth and Characterization of Thin Layers of Semiconductor Tin by P Folkes, P Taylor, C Rong, B Nichols

  4. Structure and Magnetism of Nanocrystalline and Epitaxial (Mn,Zn,Fe)3O4

    DTIC Science & Technology

    2012-01-01

    excitation. In particular, photomagnetism has been observed in a few spinel structure materials,2,3 including doped spinel structure ferrites and... ferrite films have been identified to exhibit photomagnetic effects at room temperature.7,8 Because optical sensitivity of spinel ferrites can be...substrates yield epitaxial films. At low temperatures, NC films exhibit a shift in the magnetic hysteresis , which is not seen in the epitaxial films. The

  5. Chemically Resolved Interface Structure of Epitaxial Graphene on SiC(0001)

    DTIC Science & Technology

    2013-11-19

    Chemically Resolved Interface Structure of Epitaxial Graphene on SiC(0001) Jonathan D. Emery,1 Blanka Detlefs,2 Hunter J. Karmel,1 Luke O. Nyakiti,3...unique properties that can be significantly modified through interaction with an underlying support. For epitaxial graphene on SiC(0001), the...interface strongly influences the electronic properties of the overlaying graphene . We demonstrate a novel combination of x-ray scattering and spectroscopy

  6. Progress toward cascade cells made by OM-VPE. [organometallic vapor phase epitaxy

    NASA Technical Reports Server (NTRS)

    Borden, P. G.; Larue, R. A.; Ludowise, M. J.

    1982-01-01

    Organometallic Vapor Phase Epitaxy (COM-VPE) was used to make a sophisticated monolithic cascade cell, with a peak AMO efficiency of 16.6%, not corrected for 14% grid coverage. The cell has 9 epitaxial layers. The top cell is 1.35 microns thick with a 0.1 micron thich emitter. Both cells are heteroface n-p structures. The cascade cell uses metal interconnects. Details of growth and processing are described.

  7. Pinhole-free growth of epitaxial CoSi.sub.2 film on Si(111)

    NASA Technical Reports Server (NTRS)

    Lin, True-Lon (Inventor); Fathauer, Robert W. (Inventor); Grunthaner, Paula J. (Inventor)

    1991-01-01

    Pinhole-free epitaxial CoSi.sub.2 films (14') are fabricated on (111)-oriented silicon substrates (10) with a modified solid phase epitaxy technique which utilizes (1) room temperature stoichiometric (1:2) codeposition of Co and Si followed by (2) room temperature deposition of an amorphous silicon capping layer (16), and (3) in situ annealing at a temperature ranging from about 500.degree. to 750.degree. C.

  8. Structural Consequences of Hydrogen Intercalation of Epitaxial Graphene on SiC(0001)

    DTIC Science & Technology

    2014-10-23

    Structural consequences of hydrogen intercalation of epitaxial graphene on SiC(0001) Jonathan D. Emery,1,a) Virginia H. Wheeler,2 James E. Johns,1...the interface between epitaxial graphene (EG) and its SiC substrate is known to significantly influence the electronic properties of the graphene ...from that of the overlying graphene layers. This newly formed graphene layer becomes decoupled from the SiC substrate and, along with the other graphene

  9. Characterization of silicon-germanium epitaxial layer by photoluminescence intensity and reflectance measurement techniques.

    PubMed

    Back, Dohyun; Lee, Jaehyeong

    2014-12-01

    Si(1-x)Ge(x) epitaxial layers with various Ge fractions sample were characterized by photoluminescence intensity method at room temperature. Photoluminescence intensity was affected by minority carrier lifetime, defect density, and surface condition. PL intensity profile showed misfit dislocation on epitaxial layer for 15%, 21%, 24%, and 26%, since dislocations were one of minority carrier lifetime degradation parameters. It clearly showed misfit dislocation profiles, cross-hatch, and PL intensity was low at dislocation region.

  10. Choice of Substrate Material for Epitaxial CdTe Solar Cells

    SciTech Connect

    Song, Tao; Kanevce, Ana; Sites, James R.

    2015-06-14

    Epitaxial CdTe with high quality, low defect density, and high carrier concentration should in principle yield high-efficiency photovoltaic devices. However, insufficient effort has been given to explore the choice of substrate for high-efficiency epitaxial CdTe solar cells. In this paper, we use numerical simulations to investigate three crystalline substrates: silicon (Si), InSb, and CdTe each substrate material are generally discussed.

  11. TiO2 as an electrostatic template for epitaxial growth of EuO on MgO(001) by reactive molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Swartz, Adrian G.; Wong, Jared J. I.; Pinchuk, Igor V.; Kawakami, Roland K.

    2012-04-01

    We investigate the initial growth modes and the role of interfacial electrostatic interactions of EuO epitaxy on MgO(001) by reactive molecular beam epitaxy. A TiO2 interfacial layer is employed to produce high quality epitaxial growth of EuO on MgO(001) with a 45° in plane rotation. For comparison, direct deposition of EuO on MgO, without the TiO2 layer shows a much slower time evolution in producing a single crystal film. Conceptual arguments of electrostatic repulsion of like-ions are introduced to explain the increased EuO quality at the interface with the TiO2 layer. It is shown that ultrathin EuO films in the monolayer regime can be produced on the TiO2 surface by substrate-supplied oxidation and that such films have bulk Curie temperatures.

  12. Direct growth of graphene on in situ epitaxial hexagonal boron nitride flakes by plasma-assisted molecular beam epitaxy

    SciTech Connect

    Xu, Zhongguang; Zheng, Renjing; Khanaki, Alireza; Zuo, Zheng; Liu, Jianlin

    2015-11-23

    Hexagonal boron nitride (h-BN) single-crystal domains were grown on cobalt (Co) substrates at a substrate temperature of 850–900 °C using plasma-assisted molecular beam epitaxy. Three-point star shape h-BN domains were observed by scanning electron microscopy, and confirmed by Raman and X-ray photoelectron spectroscopy. The h-BN on Co template was used for in situ growth of multilayer graphene, leading to an h-BN/graphene heterostructure. Carbon atoms preferentially nucleate on Co substrate and edges of h-BN and then grow laterally to form continuous graphene. Further introduction of carbon atoms results in layer-by-layer growth of graphene on graphene and lateral growth of graphene on h-BN until it may cover entire h-BN flakes.

  13. Strain in epitaxial high-index Bi2Se3(221) films grown by molecular-beam epitaxy

    NASA Astrophysics Data System (ADS)

    Li, Bin; Chen, Weiguang; Guo, Xin; Ho, Wingkin; Dai, Xianqi; Jia, Jinfeng; Xie, Maohai

    2017-02-01

    High-index Bi2Se3(221) film has been grown on In2Se3-buffered GaAs(001), in which a much retarded strain relaxation dynamics is recorded. The slow strain-relaxation process of in epitaxial Bi2Se3(221) can be attributed to the layered structure of Bi2Se3 crystal, where the epifilm grown along [221] is like a pile of weakly-coupled quintuple layer slabs stacked side-by-side on substrate. Finally, we reveal strong chemical bonding at the interface of Bi2Se3 and In2Se3 by plotting differential charge contour calculated by first-principle method. This study points to the feasibility of achieving strained TIs for manipulating the properties of topological systems.

  14. Epitaxial Overgrowth of Gallium Nitride Nano-Rods on Silicon (111) Substrates by RF-Plasma-Assisted Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Ku, Jui-Tai; Yang, Tsung-Hsi; Chang, Jet-Rung; Wong, Yuen-Yee; Chou, Wu-Ching; Chang, Chun-Yen; Chen, Chiang-Yao

    2010-04-01

    Strain-free gallium nitride (GaN) overgrowth on GaN nano-rods is realized by RF-plasma assisted molecular beam epitaxy (RF-MBE) on silicon (Si) substrate. The strain-free condition was identified by the strong free A exciton (FXA) photoluminescence (PL) peak at 3.478 eV and the E2 high phonon Raman shift of 567 cm-1. It is clearly demonstrated that the critical diameter of GaN nano-rods is around 80 nm for the overgrowth of strain-free GaN. The blue-shift of PL peak energy and phonon Raman energy with decreasing the diameter of nano-rod result from the strain relaxation of overgrowth GaN.

  15. Epitaxial growth of hetero-nanostructures based on ultrathin two-dimensional nanosheets.

    PubMed

    Tan, Chaoliang; Zhang, Hua

    2015-09-30

    Ultrathin two-dimensional (2D) nanosheets, such as graphene and MoS2, which are demonstrated to be fundamentally and technologically important in many applications, have emerged as a unique family of nanomaterials in chemistry and material science over the past decade. The single-crystalline nature and ultrathin thickness of these 2D nanosheets make them ideal templates for the epitaxial deposition of nanostructures, which offer many possibilities to engineer microsized 2D p-n hetero-junctions at atomic/nanometer scale. This Perspective aims to provide information on the epitaxial growth of hetero-nanostructures based on ultrathin 2D nanosheets. Various methods for the epitaxial growth of nanostructures based on ultrathin 2D nanosheets or in situ growth of lateral or vertical epitaxial 2D semiconductor hetero-nanostructures are introduced. The advantages of these 2D epitaxial hetero-nanostructures for some applications, such as electronics, optoelectronics, and electrocatalysis, are also presented. On the basis of the current status of 2D epitaxial hetero-nanostructures, the future prospects of this promising area are discussed.

  16. Molecular beam epitaxy and metalorganic chemical vapor deposition growth of epitaxial CdTe on (100) GaAs/Si and (111) GaAs/Si substrates

    NASA Technical Reports Server (NTRS)

    Nouhi, A.; Radhakrishnan, G.; Katz, J.; Koliwad, K.

    1988-01-01

    Epitaxial CdTe has been grown on both (100)GaAs/Si and (111)GaAs/Si substrates. A combination of molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) has been employed for the first time to achieve this growth: the GaAs layers are grown on Si substrates by MBE and the CdTe film is subsequently deposited on GaAs/Si by MOCVD. The grown layers have been characterized by X-ray diffraction, scanning electron microscopy, and photoluminescence.

  17. Growth mechanisms for Si epitaxy on O atomic layers: Impact of O-content and surface structure

    NASA Astrophysics Data System (ADS)

    Jayachandran, Suseendran; Billen, Arne; Douhard, Bastien; Conard, Thierry; Meersschaut, Johan; Moussa, Alain; Caymax, Matty; Bender, Hugo; Vandervorst, Wilfried; Heyns, Marc; Delabie, Annelies

    2016-10-01

    The epitaxial growth of Si layers on Si substrates in the presence of O atoms is generally considered a challenge, as O atoms degrade the epitaxial quality by generating defects. Here, we investigate the growth mechanisms for Si epitaxy on O atomic layers (ALs) with different O-contents and structures. O ALs are deposited by ozone (O3) or oxygen (O2) exposure on H-terminated Si at 50 °C and 300 °C respectively. Epitaxial Si is deposited by chemical vapor deposition using silane (SiH4) at 500 °C. After O3 exposure, the O atoms are uniformly distributed in Si-Si dimer/back bonds. This O layer still allows epitaxial seeding of Si. The epitaxial quality is enhanced by lowering the surface distortions due to O atoms and by decreasing the arrival rate of SiH4 reactants, allowing more time for surface diffusion. After O2 exposure, the O atoms are present in the form of SiOx clusters. Regions of hydrogen-terminated Si remain present between the SiOx clusters. The epitaxial seeding of Si in these structures is realized on H-Si regions, and an epitaxial layer grows by a lateral overgrowth mechanism. A breakdown in the epitaxial ordering occurs at a critical Si thickness, presumably by accumulation of surface roughness.

  18. Structure–property relations of orthorhombic [(CH{sub 3}){sub 3}NCH{sub 2}COO]{sub 2}(CuCl{sub 2}){sub 3}·2H{sub 2}O

    SciTech Connect

    Haussühl, Eiken; Schreuer, Jürgen; Wiehl, Leonore; Paulsen, Natalia

    2014-04-01

    Large single crystals of orthorhombic [(CH{sub 3}){sub 3}NCH{sub 2}COO]{sub 2}(CuCl{sub 2}){sub 3}·2H{sub 2}O with dimensions up to 40×40×30 mm{sup 3} were grown from aqueous solutions. The elastic and piezoelastic coefficients were derived from ultrasonic resonance frequencies and their shifts upon variation of pressure, respectively, using the plate-resonance technique. Additionally, the coefficients of thermal expansion were determined between 95 K and 305 K by dilatometry. The elastic behaviour at ambient conditions is dominated by the 2-dimensional network of strong hydrogen bonds within the (001) plane leading to a corresponding pseudo-tetragonal anisotropy of the longitudinal elastic stiffness. The variation of elastic properties with pressure, however, as well as the thermal expansion shows strong deviations from the pseudo-tetragonal symmetry. These deviations are probably correlated with tilts of the elongated tri-nuclear betaine–CuCl{sub 2}–water complexes. Neither the thermal expansion nor the specific heat capacity gives any hint on a phase transition in the investigated temperature range. - Graphical abstract: Single crystal of orthorhombic [(CH{sub 3}){sub 3}NCH{sub 2}COO]{sub 2}(CuCl{sub 2}){sub 3}·2H{sub 2}O. - Highlights: • Large single crystals (40 ×40 ×30 mm{sup 3}) of [(CH{sub 3}){sub 3}NCH{sub 2}COO]{sub 2}(CuCl{sub 2}){sub 3}·2H{sub 2}O were grown. • The elastic and piezoelastic coefficients were derived from ultrasonic resonance frequencies. • Thermal expansion (95 K–305 K) and heat capacity (113 K–323 K) were determined. • The orthorhombic structure shows pseudo-tetragonal elastic anisotropy at ambient conditions. • The crystal structure is stable in the investigated range (1–1600 bar, 95–303 K)

  19. Synthesis, thermal expansion and high-temperature electrical conductivity of Co-doped (Y,Ca)FeO{sub 3−δ} with orthorhombic perovskite structure

    SciTech Connect

    Kalyuzhnaya, A.S.; Drozhzhin, O.A.; Istomin, S.Ya.; Gippius, A.A.; Kazakov, S.M.; Lyskov, N.V.; Rozova, M.G.; Antipov, E.V.

    2015-06-15

    Highlights: • (Y,Ca)(Fe,Co)O{sub 3−δ} was prepared via citrate-based route with annealing at 1150–1200 °C. • Y{sub 0.9}Ca{sub 0.1}Fe{sub 0.8}Co{sub 0.2}O{sub 3−δ} demonstrates low thermal expansion coefficient of 11.9 ppm K{sup −1}. • Oxides do not react with YSZ and GDC up to 1000 °C and 1100 °C, respectively. • Compounds demonstrate higher electrical conductivity in comparison with Y{sub 0.9}Ca{sub 0.1}FeO{sub 3}. • Pr-doped (Y,Ca)(Fe,Co)O{sub 3−δ} demonstrate both higher electrical conductivity and TEC. - Abstract: Orthorhombic perovskites Y{sub 1−x}Ca{sub x}Fe{sub 1−y}Co{sub y}O{sub 3−δ} (0.1 ≤ x ≤ 0.2, 0.1 ≤ y ≤ 0.2 and x = 0.1, y = 0.3) were synthesized in air by the citrate route at 1150–1300 °C. High-temperature X-ray powder diffraction (HT XRPD) data for Y{sub 0.9}Ca{sub 0.1}Fe{sub 0.8}Co{sub 0.2}O{sub 3−δ} at 25–800 °C showed no phase transition with calculated thermal expansion coefficient (TEC) of 11.9 ppm K{sup −1}. High-temperature electrical conductivity measurements revealed almost composition independent conductivity values of 22–27 S/cm at 900 °C. No chemical interaction of Y{sub 0.8}Ca{sub 0.2}Fe{sub 0.9}Co{sub 0.1}O{sub 3−δ} with (Zr,Y)O{sub 2−x} (YSZ) or (Ce,Gd)O{sub 2−x} (GDC) was observed up to 1000 °C and 1100 °C, respectively. Partial replacement of Y by Pr according to formula Y{sub 0.8−z}Pr{sub z}Ca{sub 0.2}Fe{sub 0.7}Co{sub 0.3}O{sub 3−δ}, 0.1 ≤ z ≤ 0.35, leads to an increase of both electrical conductivity up to 50 S/cm (z = 0.3) at 900 °C and dilatometry measured TEC up to 15.1 ppm K{sup −1}. Moderate values of electrical conductivity in combination with low TEC and stability towards chemical interaction with typical SOFC electrolytes make Co-doped Y{sub 1−x}Ca{sub x}FeO{sub 3−δ} promissing cathode materials for intermediate temperature solid oxide fuel cells (IT-SOFC)

  20. Monoclinic-to-orthorhombic phase transition of the hexamethylenetetramine-2-methylbenzoic acid (1/2) cocrystal with temperature-dependent dynamic molecular disorder.

    PubMed

    Chia, Tze Shyang; Quah, Ching Kheng

    2016-12-01

    As a function of temperature, the hexamethylenetetramine-2-methylbenzoic acid (1/2) cocrystal, C6H12N4·2C8H8O2, undergoes a reversible structural phase transition. The orthorhombic high-temperature phase in the space group Pccn has been studied in the temperature range between 165 and 300 K. At 164 K, a t2 phase transition to the monoclinic subgroup P21/c space group occurs; the resulting twinned low-temperature phase was investigated in the temperature range between 164 and 100 K. The domains in the pseudomerohedral twin are related by a twofold rotation corresponding to the matrix (100/0-10/00-1. Systematic absence violations represent a sensitive criterium for the decision about the correct space-group assignment at each temperature. The fractional volume contributions of the minor twin domain in the low-temperature phase increases in the order 0.259 (2) → 0.318 (2) → 0.336 (2) → 0.341 (3) as the temperature increases in the order 150 → 160 → 163 → 164 K. The transformation occurs between the nonpolar point group mmm and the nonpolar point group 2/m, and corresponds to a ferroelastic transition or to a t2 structural phase transition. The asymmetric unit of the low-temperature phase consists of two hexamethylenetetramine molecules and four molecules of 2-methylbenzoic acid; it is smaller by a factor of 2 in the high-temperature phase and contains two half molecules of hexamethylenetetramine, which sit across twofold axes, and two molecules of the organic acid. In both phases, the hexamethylenetetramine residue and two benzoic acid molecules form a three-molecule aggregate; the low-temperature phase contains two of these aggregates in general positions, whereas they are situated on a crystallographic twofold axis in the high-temperature phase. In both phases, one of these three-molecule aggregates is disordered. For this disordered unit, the ratio between the major and minor conformer increases upon cooling from

  1. Retention of the Tetragonal to Orthorhombic Structural Transition in F-Substituted SmFeAsO: A New Phase Diagram for SmFeAs(O1-xFx)

    NASA Astrophysics Data System (ADS)

    Martinelli, A.; Palenzona, A.; Tropeano, M.; Putti, M.; Ferdeghini, C.; Profeta, G.; Emerich, E.

    2011-06-01

    In this Letter we propose a new phase diagram for the SmFeAs(O1-xFx) system, based on careful analysis of synchrotron powder diffraction data, SQUID, and muon spin rotation measurements. The tetragonal to orthorhombic structural transition is slightly affected by F content and is retained for the superconducting samples, even at optimal doping. These findings relate the AFM transition on a different ground with respect to the structural one and suggests that orbital ordering could be the driving force for symmetry breaking.

  2. Search for quantum size effects in ultrathin epitaxial metallic films

    NASA Astrophysics Data System (ADS)

    Badoz, P. A.; D'Avitaya, F. Arnaud; Rosencher, E.

    In order to investigate quantum size effects in ultrathin metal films, tunneling spectroscopy measurements have been performed in the epitaxial CoSi2/Si system, with a metal thickness ranging from 1000 Å down to 35 A, i.e. a few de Broglie wavelengths of electrons in CoSi 2. The resulting spectra show extremely rich sets of features, the origin of which are investigated. The peaks observed at low energy (-100 meV, +100 meV) are thickness independent and attributed to phonon emission by hot electrons. The peaks observed at higher energy (up to 600 meV) are thickness dependent but their physical origin is not yet fully ascertained. The absence of unambiguous electron quantization effects in these epitaxial films is discussed and tentatively attributed to small thickness fluctuations (of the order of a few monolayers), which tend to blur the quantization of the electronic energies. Nous avons étudié les effets de quantification électronique dans les films métalliques minces par spectroscopie tunnel des jonctions CoSi2/Si épitaxiées, pour des épaisseurs de film métallique variant de 1000 ? 35 A, i.e. quelques longueurs d'ondes de de Broglie des électrons dans le CoSi 2. Les spectres obtenus montrent un ensemble de structures extrêmement riche dont nous discutons l'origine physique. Les pics observés à faible énergie (-100 meV, + 100 meV) sont indépendants de I'épaisseur du film de CoSi2, et attribués à l'émission de phonons par les électrons chauds dans le silicium. L'origine des pics observés à plus forte énergie (jusqu'à 600 meV) et dont la position dépend de l'épaisseur du film, est encore incomplètement comprise. Nous discutons l'absence d'effets clairement reliés à la quantification du gaz d'électrons bidimensionnel dans ces films épitaxiés: celle-ci pourrait provenir de faibles fluctuations d'épaisseur (quelques monocouches) qui tendent à brouiller la quantification des énergies électroniques.

  3. Real-time observation of epitaxial graphene domain reorientation

    PubMed Central

    Rogge, Paul C.; Thürmer, Konrad; Foster, Michael E.; McCarty, Kevin F.; Dubon, Oscar D.; Bartelt, Norman C.

    2015-01-01

    Graphene films grown by vapour deposition tend to be polycrystalline due to the nucleation and growth of islands with different in-plane orientations. Here, using low-energy electron microscopy, we find that micron-sized graphene islands on Ir(111) rotate to a preferred orientation during thermal annealing. We observe three alignment mechanisms: the simultaneous growth of aligned domains and dissolution of rotated domains, that is, ‘ripening'; domain boundary motion within islands; and continuous lattice rotation of entire domains. By measuring the relative growth velocity of domains during ripening, we estimate that the driving force for alignment is on the order of 0.1 meV per C atom and increases with rotation angle. A simple model of the orientation-dependent energy associated with the moiré corrugation of the graphene sheet due to local variations in the graphene–substrate interaction reproduces the results. This work suggests new strategies for improving the van der Waals epitaxy of 2D materials. PMID:25892219

  4. Controlled epitaxial graphene growth within removable amorphous carbon corrals

    SciTech Connect

    Palmer, James; Hu, Yike; Hankinson, John; Guo, Zelei; Heer, Walt A. de; Kunc, Jan; Berger, Claire

    2014-07-14

    We address the question of control of the silicon carbide (SiC) steps and terraces under epitaxial graphene on SiC and demonstrate amorphous carbon (aC) corrals as an ideal method to pin SiC surface steps. aC is compatible with graphene growth, structurally stable at high temperatures, and can be removed after graphene growth. For this, aC is first evaporated and patterned on SiC, then annealed in the graphene growth furnace. There at temperatures above 1200 °C, mobile SiC steps accumulate at the aC corral that provide effective step flow barriers. Aligned step free regions are thereby formed for subsequent graphene growth at temperatures above 1330 °C. Atomic force microscopy imaging supports the formation of step-free terraces on SiC with the step morphology aligned to the aC corrals. Raman spectroscopy indicates the presence of good graphene sheets on the step-free terraces.

  5. Epitaxial graphene quantum dots for high-performance terahertz bolometers

    NASA Astrophysics Data System (ADS)

    El Fatimy, Abdel; Myers-Ward, Rachael L.; Boyd, Anthony K.; Daniels, Kevin M.; Gaskill, D. Kurt; Barbara, Paola

    2016-04-01

    Light absorption in graphene causes a large change in electron temperature due to the low electronic heat capacity and weak electron-phonon coupling. This property makes graphene a very attractive material for hot-electron bolometers in the terahertz frequency range. Unfortunately, the weak variation of electrical resistance with temperature results in limited responsivity for absorbed power. Here, we show that, due to quantum confinement, quantum dots of epitaxial graphene on SiC exhibit an extraordinarily high variation of resistance with temperature (higher than 430 MΩ K-1 below 6 K), leading to responsivities of 1 × 1010 V W-1, a figure that is five orders of magnitude higher than other types of graphene hot-electron bolometer. The high responsivity, combined with an extremely low electrical noise-equivalent power (˜2 × 10-16 W Hz-1/2 at 2.5 K), already places our bolometers well above commercial cooled bolometers. Additionally, we show that these quantum dot bolometers demonstrate good performance at temperature as high as 77 K.

  6. Ferroelastic twin structures in epitaxial WO3 thin films

    NASA Astrophysics Data System (ADS)

    Yun, Shinhee; Woo, Chang-Su; Kim, Gi-Yeop; Sharma, Pankaj; Lee, Jin Hong; Chu, Kanghyun; Song, Jong Hyun; Chung, Sung-Yoon; Seidel, Jan; Choi, Si-Young; Yang, Chan-Ho

    2015-12-01

    Tungsten trioxide is a binary oxide that has potential applications in electrochromic windows, gas sensors, photo-catalysts, and superconductivity. Here, we analyze the crystal structure of atomically flat epitaxial layers on YAlO3 single crystal substrates and perform nanoscale investigations of the ferroelastic twins revealing a hierarchical structure at multiple length scales. We have found that the finest stripe ferroelastic twin walls along pseudocubic <100> axes are associated with cooperative mosaic rotations of the monoclinic films and the larger stripe domains along pseudocubic <110> axes are created to reduce the misfit strain through a commensurate matching of an effective in-plane lattice parameter between film and substrate. The typical widths of the two fine and larger stripe domains increase with film thickness following a power law with scaling exponents of ˜0.6 and ˜0.4, respectively. We have also found that the twin structure can be readily influenced by illumination with an electron beam or a tip-based mechanical compression.

  7. Exceptional gettering response of epitaxially grown kerfless silicon

    DOE PAGES

    Powell, D. M.; Markevich, V. P.; Hofstetter, J.; ...

    2016-02-08

    The bulk minority-carrier lifetime in p- and n-type kerfless epitaxial (epi) crystalline silicon wafers is shown to increase >500 during phosphorus gettering. We employ kinetic defect simulations and microstructural characterization techniques to elucidate the root cause of this exceptional gettering response. Simulations and deep-level transient spectroscopy (DLTS) indicate that a high concentra- tion of point defects (likely Pt) is “locked in” during fast (60 C/min) cooling during epi wafer growth. The fine dispersion of moderately fast-diffusing recombination-active point defects limits as-grown lifetime but can also be removed during gettering, confirmed by DLTS measurements. Synchrotron-based X-ray fluorescence microscopy indicates metal agglomeratesmore » at structural defects, yet the structural defect density is sufficiently low to enable high lifetimes. Consequently, after phosphorus diffusion gettering, epi silicon exhibits a higher lifetime than materials with similar bulk impurity contents but higher densities of structural defects, including multicrystalline ingot and ribbon silicon materials. As a result, device simulations suggest a solar-cell efficiency potential of this material >23%.« less

  8. Computer modelling of nanoscale diffusion phenomena at epitaxial interfaces

    NASA Astrophysics Data System (ADS)

    Michailov, M.; Ranguelov, B.

    2014-05-01

    The present study outlines an important area in the application of computer modelling to interface phenomena. Being relevant to the fundamental physical problem of competing atomic interactions in systems with reduced dimensionality, these phenomena attract special academic attention. On the other hand, from a technological point of view, detailed knowledge of the fine atomic structure of surfaces and interfaces correlates with a large number of practical problems in materials science. Typical examples are formation of nanoscale surface patterns, two-dimensional superlattices, atomic intermixing at an epitaxial interface, atomic transport phenomena, structure and stability of quantum wires on surfaces. We discuss here a variety of diffusion mechanisms that control surface-confined atomic exchange, formation of alloyed atomic stripes and islands, relaxation of pure and alloyed atomic terraces, diffusion of clusters and their stability in an external field. The computational model refines important details of diffusion of adatoms and clusters accounting for the energy barriers at specific atomic sites: smooth domains, terraces, steps and kinks. The diffusion kinetics, integrity and decomposition of atomic islands in an external field are considered in detail and assigned to specific energy regions depending on the cluster stability in mass transport processes. The presented ensemble of diffusion scenarios opens a way for nanoscale surface design towards regular atomic interface patterns with exotic physical features.

  9. Creating Ruddlesden-Popper phases by hybrid molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Haislmaier, Ryan C.; Stone, Greg; Alem, Nasim; Engel-Herbert, Roman

    2016-07-01

    The synthesis of a 50 unit cell thick n = 4 Srn+1TinO3n+1 (Sr5Ti4O13) Ruddlesden-Popper (RP) phase film is demonstrated by sequentially depositing SrO and TiO2 layers in an alternating fashion using hybrid molecular beam epitaxy (MBE), where Ti was supplied using titanium tetraisopropoxide (TTIP). A detailed calibration procedure is outlined for determining the shuttering times to deposit SrO and TiO2 layers with precise monolayer doses using in-situ reflection high energy electron diffraction (RHEED) as feedback. Using optimized Sr and TTIP shuttering times, a fully automated growth of the n = 4 RP phase was carried out over a period of >4.5 h. Very stable RHEED intensity oscillations were observed over the entire growth period. The structural characterization by X-ray diffraction and high resolution transmission electron microscopy revealed that a constant periodicity of four SrTiO3 perovskite unit cell blocks separating the double SrO rocksalt layer was maintained throughout the entire film thickness with a very little amount of planar faults oriented perpendicular to the growth front direction. These results illustrate that hybrid MBE is capable of layer-by-layer growth with atomic level precision and excellent flux stability.

  10. On the Growth of Complex Oxides by Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Fong, Dillon

    Functional materials based on complex oxides in thin film form offer new and exciting strategies for meeting many of our outstanding energy challenges through systematic control of layer sequencing, strain, etc. However, the synthesis of such oxide films can be a major challenge even when utilizing reactive molecular-beam epitaxy (MBE), a powerful deposition technique that allows the construction of materials atomic plane by atomic plane. To understand the fundamental physics of oxide growth by reactive MBE, we present in situ surface x-ray diffraction results on the growth of SrTiO3 and SrO-SrTiO3 thin films on (001)-oriented SrTiO3 substrates. For homoepitaxy, we compare sequential deposition (alternating Sr and Ti monolayer doses) with that of co-deposition of Sr and Ti, both in a background of oxygen pressure, and observe drastically different growth pathways due to the presence of a TiO2 double layer. For heteroepitaxial growth of Ruddlesden-Popper SrO-SrTiO3 films, we find that layers rearrange dynamically, resulting in layer sequences distinct from the shutter sequence. In general, the starting surface structure and composition, in combination with local thermodynamic considerations, strongly influence our ability to atomically construct new complex oxides.

  11. Exceptional gettering response of epitaxially grown kerfless silicon

    SciTech Connect

    Powell, D. M.; Markevich, V. P.; Hofstetter, J.; Jensen, M. A.; Morishige, A. E.; Castellanos, S.; Lai, B.; Peaker, A. R.; Buonassisi, T.

    2016-02-08

    The bulk minority-carrier lifetime in p- and n-type kerfless epitaxial (epi) crystalline silicon wafers is shown to increase >500 during phosphorus gettering. We employ kinetic defect simulations and microstructural characterization techniques to elucidate the root cause of this exceptional gettering response. Simulations and deep-level transient spectroscopy (DLTS) indicate that a high concentra- tion of point defects (likely Pt) is “locked in” during fast (60 C/min) cooling during epi wafer growth. The fine dispersion of moderately fast-diffusing recombination-active point defects limits as-grown lifetime but can also be removed during gettering, confirmed by DLTS measurements. Synchrotron-based X-ray fluorescence microscopy indicates metal agglomerates at structural defects, yet the structural defect density is sufficiently low to enable high lifetimes. Consequently, after phosphorus diffusion gettering, epi silicon exhibits a higher lifetime than materials with similar bulk impurity contents but higher densities of structural defects, including multicrystalline ingot and ribbon silicon materials. As a result, device simulations suggest a solar-cell efficiency potential of this material >23%.

  12. Transparent Conductive Two-Dimensional Titanium Carbide Epitaxial Thin Films.

    PubMed

    Halim, Joseph; Lukatskaya, Maria R; Cook, Kevin M; Lu, Jun; Smith, Cole R; Näslund, Lars-Åke; May, Steven J; Hultman, Lars; Gogotsi, Yury; Eklund, Per; Barsoum, Michel W

    2014-04-08

    Since the discovery of graphene, the quest for two-dimensional (2D) materials has intensified greatly. Recently, a new family of 2D transition metal carbides and carbonitrides (MXenes) was discovered that is both conducting and hydrophilic, an uncommon combination. To date MXenes have been produced as powders, flakes, and colloidal solutions. Herein, we report on the fabrication of ∼1 × 1 cm(2) Ti3C2 films by selective etching of Al, from sputter-deposited epitaxial Ti3AlC2 films, in aqueous HF or NH4HF2. Films that were about 19 nm thick, etched with NH4HF2, transmit ∼90% of the light in the visible-to-infrared range and exhibit metallic conductivity down to ∼100 K. Below 100 K, the films' resistivity increases with decreasing temperature and they exhibit negative magnetoresistance-both observations consistent with a weak localization phenomenon characteristic of many 2D defective solids. This advance opens the door for the use of MXenes in electronic, photonic, and sensing applications.

  13. Epitaxially-Grown GaN Junction Field Effect Transistors

    SciTech Connect

    Baca, A.G.; Chang, P.C.; Denbaars, S.P.; Lester, L.F.; Mishra, U.K.; Shul, R.J.; Willison, C.G.; Zhang, L.; Zolper, J.C.

    1999-05-19

    Junction field effect transistors (JFET) are fabricated on a GaN epitaxial structure grown by metal organic chemical vapor deposition (MOCVD). The DC and microwave characteristics of the device are presented. A junction breakdown voltage of 56 V is obtained corresponding to the theoretical limit of the breakdown field in GaN for the doping levels used. A maximum extrinsic transconductance (gm) of 48 mS/mm and a maximum source-drain current of 270 mA/mm are achieved on a 0.8 µ m gate JFET device at VGS= 1 V and VDS=15 V. The intrinsic transconductance, calculated from the measured gm and the source series resistance, is 81 mS/mm. The fT and fmax for these devices are 6 GHz and 12 GHz, respectively. These JFETs exhibit a significant current reduction after a high drain bias is applied, which is attributed to a partially depleted channel caused by trapped hot-electrons in the semi-insulating GaN buffer layer. A theoretical model describing the current collapse is described, and an estimate for the length of the trapped electron region is given.

  14. Epitaxial growth of silicon nanowires using an aluminium catalyst.

    PubMed

    Wang, Yewu; Schmidt, Volker; Senz, Stephan; Gösele, Ulrich

    2006-12-01

    Silicon nanowires have been identified as important components for future electronic and sensor nanodevices. So far gold has dominated as the catalyst for growing Si nanowires via the vapour-liquid-solid (VLS) mechanism. Unfortunately, gold traps electrons and holes in Si and poses a serious contamination problem for Si complementary metal oxide semiconductor (CMOS) processing. Although there are some reports on the use of non-gold catalysts for Si nanowire growth, either the growth requires high temperatures and/or the catalysts are not compatible with CMOS requirements. From a technological standpoint, a much more attractive catalyst material would be aluminium, as it is a standard metal in Si process lines. Here we report for the first time the epitaxial growth of Al-catalysed Si nanowires and suggest that growth proceeds via a vapour-solid-solid (VSS) rather than a VLS mechanism. It is also found that the tapering of the nanowires can be strongly reduced by lowering the growth temperature.

  15. Langevin Equation for the Morphological Evolution of Strained Epitaxial Films

    NASA Astrophysics Data System (ADS)

    Vvedensky, Dimitri; Haselwandter, Christoph

    2006-03-01

    A stochastic partial differential equation for the morphological evolution of strained epitaxial films is derived from an atomistic master equation. The transition rules in this master equation are based on previous kinetic Monte Carlo (KMC) simulations of a model that incorporates the effects of strain through local environment-dependent energy barriers to adatom detachment from step edges. The morphological consequences of these rules are seen in the transition from layer-by-layer growth to the appearance of three-dimensional islands with increasing strain. The regularization of the exact Langevin description of these rules yields a continuum equation whose lowest-order terms provide a coarse-grained theory of this model. The coefficients in this equation are expressed in terms of the parameters of the original lattice model, so a direct comparison between the morphologies produced by KMC simulations and this Langevin equation are meaningful. Comparisons with previous approaches are made to provide an atomistic interpretation of a similar equation derived by Golovin et al. based on classical elasticity.

  16. Real-time observation of epitaxial graphene domain reorientation

    DOE PAGES

    Thuermer, Konrad; Foster, Michael E.; Bartelt, Norman Charles; ...

    2015-04-20

    Graphene films grown by vapour deposition tend to be polycrystalline due to the nucleation and growth of islands with different in-plane orientations. Here, using low-energy electron microscopy, we find that micron-sized graphene islands on Ir(111) rotate to a preferred orientation during thermal annealing. We observe three alignment mechanisms: the simultaneous growth of aligned domains and dissolution of rotated domains, that is, ‘ripening’; domain boundary motion within islands; and continuous lattice rotation of entire domains. By measuring the relative growth velocity of domains during ripening, we estimate that the driving force for alignment is on the order of 0.1 meV permore » C atom and increases with rotation angle. A simple model of the orientation-dependent energy associated with the moiré corrugation of the graphene sheet due to local variations in the graphene–substrate interaction reproduces the results. This study suggests new strategies for improving the van der Waals epitaxy of 2D materials.« less

  17. Epitaxial thin films of novel multiferroic double perovskites.

    NASA Astrophysics Data System (ADS)

    Venimadhav, A.; Li, Qi

    2006-03-01

    Recently multiferroic materials have attracted great interest. However, relatively a few pure multiferroic compounds are currently known. Here we show the exploration of design of multiferroic properties in double perovskites by combining the ferrolectrisity driven by the Bi lone pairs and selectively choosing the 3d transition metals following Goodenough-Kanamori's rules to bring in ferromagnetism. We present growth issues in stabilizing the single phase, epitaxial thin films of new double perovskite multiferroic systems such as Bi2NiMnO6, Bi2FeCrO6 and La2NiMnO6 by pulsed laser deposition. Targets of these compositions were synthesized by solid state method with 15% of excess Bi in the composition to compensate the volatility of Bi during the deposition. We also present the synthesis of Bi2FeCrO6 by growing a superlattice structures from individual targets of Bi FeO3 and BiCrO3. In the cubic double perovskites, cations show rock salt kind of ordering in the (111) direction and hence growing these films on STO (111) substrates has an advantage. We present the growth, structural and multiferroic properties in these double perovskite thin films..

  18. Mini array of quantum Hall devices based on epitaxial graphene

    NASA Astrophysics Data System (ADS)

    Novikov, S.; Lebedeva, N.; Hämäläinen, J.; Iisakka, I.; Immonen, P.; Manninen, A. J.; Satrapinski, A.

    2016-05-01

    Series connection of four quantum Hall effect (QHE) devices based on epitaxial graphene films was studied for realization of a quantum resistance standard with an up-scaled value. The tested devices showed quantum Hall plateaux RH,2 at a filling factor v = 2 starting from a relatively low magnetic field (between 4 T and 5 T) when the temperature was 1.5 K. The precision measurements of quantized Hall resistance of four QHE devices connected by triple series connections and external bonding wires were done at B = 7 T and T = 1.5 K using a commercial precision resistance bridge with 50 μA current through the QHE device. The results showed that the deviation of the quantized Hall resistance of the series connection of four graphene-based QHE devices from the expected value of 4×RH,2 = 2 h/e2 was smaller than the relative standard uncertainty of the measurement (<1 × 10-7) limited by the used resistance bridge.

  19. Tuning epitaxial graphene sensitivity to water by hydrogen intercalation.

    PubMed

    Melios, C; Winters, M; Strupiński, W; Panchal, V; Giusca, C E; Imalka Jayawardena, K D G; Rorsman, N; Silva, S Ravi P; Kazakova, O

    2017-03-09

    The effects of humidity on the electronic properties of quasi-free standing one layer graphene (QFS 1LG) are investigated via simultaneous magneto-transport in the van der Pauw geometry and local work function measurements in a controlled environment. QFS 1LG on 4H-SiC(0001) is obtained by hydrogen intercalation of the interfacial layer. In this system, the carrier concentration experiences a two-fold increase in sensitivity to changes in relative humidity as compared to the as-grown epitaxial graphene. This enhanced sensitivity to water is attributed to the lowering of the hydrophobicity of QFS 1LG, which results from spontaneous polarization of 4H-SiC(0001) strongly influencing the graphene. Moreover, the superior carrier mobility of the QFS 1LG system is retained even at the highest humidity. The work function maps constructed from Kelvin probe force microscopy also revealed higher sensitivity to water for 1LG compared to 2LG in both QFS 1LG and as-grown systems. These results point to a new field of applications for QFS 1LG, i.e., as humidity sensors, and the corresponding need for metrology in calibration of graphene-based sensors and devices.

  20. Growth of Atomically Flat DBCO Films Using Molecular Beam Epitaxy

    NASA Astrophysics Data System (ADS)

    Andrus, Aaron E.; Oh, Seongshik; Davidson, Bruce A.; O'Donnell, Jim; Eckstein, James N.

    2000-03-01

    We have grown atomically flat a-axis dysprosium barium copper oxide (DBCO) films by molecular beam epitaxy (MBE) using a pure ozone source. Such films can be used, for example, to exploit the inherent anisotropy of DBCO in spin injection devices using ferromagnetic polarized electron sources or all-superconducting Josephson junctions. The a-axis films are grown on a strontium titanate (STO) substrate using a low temperature DBCO template to achieve a-axis orientation. During growth, we use reflection high energy electron diffraction (RHEED) to observe the emergence of one-third order streaks in the diffraction pattern and a reduction in the surface roughness as we increase the growth temperature. Subsequent x-ray diffraction shows complete a-axis normal orientation with pseudomorphic growth (in-plane lattice constants identical to the substrate) and a slightly larger out of plane lattice constant than bulk crystals. Atomic force microscopy (AFM) shows an RMS roughness of 4 Å over several millimeters of the film surface, sufficient to construct tunnel junction devices.