Stacking sequence and interlayer coupling in few-layer graphene revealed by in situ imaging

DOE PAGES

Wang, Zhu-Jun; Dong, Jichen; Cui, Yi; ...

2016-10-19

In the transition from graphene to graphite, the addition of each individual graphene layer modifies the electronic structure and produces a different material with unique properties. Controlled growth of few-layer graphene is therefore of fundamental interest and will provide access to materials with engineered electronic structure. Here we combine isothermal growth and etching experiments with in situ scanning electron microscopy to reveal the stacking sequence and interlayer coupling strength in few-layer graphene. The observed layer-dependent etching rates reveal the relative strength of the graphene graphene and graphene substrate interaction and the resulting mode of adlayer growth. Scanning tunnelling microscopy andmore » density functional theory calculations confirm a strong coupling between graphene edge atoms and platinum. Simulated etching confirms that etching can be viewed as reversed growth. This work demonstrates that real-time imaging under controlled atmosphere is a powerful method for designing synthesis protocols for sp2 carbon nanostructures in between graphene and graphite.« less

Stacking sequence and interlayer coupling in few-layer graphene revealed by in situ imaging

PubMed Central

Wang, Zhu-Jun; Dong, Jichen; Cui, Yi; Eres, Gyula; Timpe, Olaf; Fu, Qiang; Ding, Feng; Schloegl, R.; Willinger, Marc-Georg

2016-01-01

In the transition from graphene to graphite, the addition of each individual graphene layer modifies the electronic structure and produces a different material with unique properties. Controlled growth of few-layer graphene is therefore of fundamental interest and will provide access to materials with engineered electronic structure. Here we combine isothermal growth and etching experiments with in situ scanning electron microscopy to reveal the stacking sequence and interlayer coupling strength in few-layer graphene. The observed layer-dependent etching rates reveal the relative strength of the graphene–graphene and graphene–substrate interaction and the resulting mode of adlayer growth. Scanning tunnelling microscopy and density functional theory calculations confirm a strong coupling between graphene edge atoms and platinum. Simulated etching confirms that etching can be viewed as reversed growth. This work demonstrates that real-time imaging under controlled atmosphere is a powerful method for designing synthesis protocols for sp2 carbon nanostructures in between graphene and graphite. PMID:27759024

Determination of nuclear tracks parameters on sequentially etched PADC detectors

NASA Astrophysics Data System (ADS)

Horwacik, Tomasz; Bilski, Pawel; Koerner, Christine; Facius, Rainer; Berger, Thomas; Nowak, Tomasz; Reitz, Guenther; Olko, Pawel

Polyallyl Diglycol Carbonate (PADC) detectors find many applications in radiation protection. One of them is the cosmic radiation dosimetry, where PADC detectors measure the linear energy transfer (LET) spectra of charged particles (from protons to heavy ions), supplementing TLD detectors in the role of passive dosemeter. Calibration exposures to ions of known LET are required to establish a relation between parameters of track observed on the detector and LET of particle creating this track. PADC TASTRAK nuclear track detectors were exposed to 12 C and 56 Fe ions of LET in H2 O between 10 and 544 keV/µm. The exposures took place at the Heavy Ion Medical Accelerator (HIMAC) in Chiba, Japan in the frame of the HIMAC research project "Space Radiation Dosimetry-Ground Based Verification of the MATROSHKA Facility" (20P-240). Detectors were etched in water solution of NaOH with three different temperatures and for various etching times to observe the appearance of etched tracks, the evolution of their parameters and the stability of the etching process. The applied etching times (and the solution's concentrations and temperatures) were: 48, 72, 96, 120 hours (6.25 N NaOH, 50 O C), 20, 40, 60, 80 hours (6.25 N NaOH, 60 O C) and 8, 12, 16, 20 hours (7N NaOH, 70 O C). The analysis of the detectors involved planimetric (2D) measurements of tracks' entrance ellipses and mechanical measurements of bulk layer thickness. Further track parameters, like angle of incidence, track length and etch rate ratio were then calculated. For certain tracks, results of planimetric measurements and calculations were also compared with results of optical track profile (3D) measurements, where not only the track's entrance ellipse but also the location of the track's tip could be directly measured. All these measurements have been performed with the 2D/3D measurement system at DLR. The collected data allow to create sets of V(LET in H2 O) calibration curves suitable for short, intermediate and long etching time and will be use during analysis of detectors exposed on the International Space Station during DOSIS and MATROSHKA experiments. The help and support of Yukio Uchihori and Hisashi Kitamura during the irradiations at HIMAC is highly appreciated. This work was supported by the Polish Ministry of Science and Higher Education, grants: No N N505 261535 and No. DWM/N118/ESA/2008.

Surface Passivation of CdZnTe Detector by Hydrogen Peroxide Solution Etching

NASA Technical Reports Server (NTRS)

Hayes, M.; Chen, H.; Chattopadhyay, K.; Burger, A.; James, R. B.

1998-01-01

The spectral resolution of room temperature nuclear radiation detectors such as CdZnTe is usually limited by the presence of conducting surface species that increase the surface leakage current. Studies have shown that the leakage current can be reduced by proper surface preparation. In this study, we try to optimize the performance of CdZnTe detector by etching the detector with hydrogen peroxide solution as function of concentration and etching time. The passivation effect that hydrogen peroxide introduces have been investigated by current-voltage (I-V) measurement on both parallel strips and metal-semiconductor-metal configurations. The improvements on the spectral response of Fe-55 and 241Am due to hydrogen peroxide treatment are presented and discussed.

TrackEtching - A Java based code for etched track profile calculations in SSNTDs

NASA Astrophysics Data System (ADS)

Muraleedhara Varier, K.; Sankar, V.; Gangadathan, M. P.

2017-09-01

A java code incorporating a user friendly GUI has been developed to calculate the parameters of chemically etched track profiles of ion-irradiated solid state nuclear track detectors. Huygen's construction of wavefronts based on secondary wavelets has been used to numerically calculate the etched track profile as a function of the etching time. Provision for normal incidence and oblique incidence on the detector surface has been incorporated. Results in typical cases are presented and compared with experimental data. Different expressions for the variation of track etch rate as a function of the ion energy have been utilized. The best set of values of the parameters in the expressions can be obtained by comparing with available experimental data. Critical angle for track development can also be calculated using the present code.

Characterization of Makrofol ® DE 1-1 for alpha particle radiography

NASA Astrophysics Data System (ADS)

El Ghazaly, M.; Aydarous, Abdulkadir; Al-Thomali, Talal A.

2017-09-01

Makrofol ® DE 1-1 (bisphenol-A polycarbonate) was investigated for alpha particle radiography. The edge spread function (ESF) was measured by razor-blade's edge. Makrofol ® DE 1-1 detectors were irradiated with perpendicular incident alpha particles of energy 2.5, 4 and 5.4 MeV, thereafter they were etched in 75% 6N KOH+25% C2H5OH at a temperature of 50 °C for different durations. The etched Makrofol®DE 1-1 detectors were imaged with an optical microscope equipped with a CCD camera. The results revealed that the green channel of the original RGB image provides the highest contrast comparing with red and blue channel by a factor of 27.6% of the original RGB image. The image contrast of alpha particle-irradiated Makrofol®DE 1-1 detector was found to be inversely related to the etching time since the alpha particle tracks proceed from a conical phase to spherical phase. The spatial resolution of alpha particle-irradiated Makrofol®DE 1-1 detector, in terms of line spread function, was found to deteriorate as the etching time increases for all examined alpha particle energies. The results revealed the potential capability of Makrofol®DE 1-1 detector as an efficient detector for alpha particle radiography such as autoradiography.

Method of fabricating reflection-mode EUV diffraction elements

DOEpatents

Naulleau, Patrick P.

2002-01-01

Techniques for fabricating a well-controlled, quantized-level, engineered surface that serves as substrates for EUV reflection multilayer overcomes problems associated with the fabrication of reflective EUV diffraction elements. The technique when employed to fabricate an EUV diffraction element that includes the steps of: (a) forming an etch stack comprising alternating layers of first and second materials on a substrate surface where the two material can provide relative etch selectivity; (b) creating a relief profile in the etch stack wherein the relief profile has a defined contour; and (c) depositing a multilayer reflection film over the relief profile wherein the film has an outer contour that substantially matches that of the relief profile. For a typical EUV multilayer, if the features on the substrate are larger than 50 nm, the multilayer will be conformal to the substrate. Thus, the phase imparted to the reflected wavefront will closely match that geometrically set by the surface height profile.

Reducing the layer number of AB stacked multilayer graphene grown on nickel by annealing at low temperature.

PubMed

Velasco, J Marquez; Giamini, S A; Kelaidis, N; Tsipas, P; Tsoutsou, D; Kordas, G; Raptis, Y S; Boukos, N; Dimoulas, A

2015-10-09

Controlling the number of layers of graphene grown by chemical vapor deposition is crucial for large scale graphene application. We propose here an etching process of graphene which can be applied immediately after growth to control the number of layers. We use nickel (Ni) foil at high temperature (T = 900 °C) to produce multilayer-AB-stacked-graphene (MLG). The etching process is based on annealing the samples in a hydrogen/argon atmosphere at a relatively low temperature (T = 450 °C) inside the growth chamber. The extent of etching is mainly controlled by the annealing process duration. Using Raman spectroscopy we demonstrate that the number of layers was reduced, changing from MLG to few-layer-AB-stacked-graphene and in some cases to randomly oriented few layer graphene near the substrate. Furthermore, our method offers the significant advantage that it does not introduce defects in the samples, maintaining their original high quality. This fact and the low temperature our method uses make it a good candidate for controlling the layer number of already grown graphene in processes with a low thermal budget.

Energy-dependent etching-related impacts on CR-39 alpha detection efficiency for the Rn-222 and Rn-220 decay chains

NASA Astrophysics Data System (ADS)

Tan, Y.; Yuan, H.; Kearfott, K. J.

2018-04-01

CR-39 detectors are widely used to measure environmental levels of Rn-222, Rn-220 and their progeny. Prior research reported the CR-39 detection efficiency for alpha particles from Rn-222, Rn-220 and their progeny under a variety of etching conditions. This paper provides an explanation for interesting observations included in that work, namely that the critical incidence angle decreases with the increasing particle energy and the detection efficiency for 8.78 MeV alpha particles is zero. This paper explains these phenomena from a consideration of the interaction of alpha particles with the CR-39 detectors and the physics of etching dynamics. The proposed theory provides a rationale for an approach to optimizing the etching conditions of CR-39 detector for measuring Rn-222, Rn-220 and their progenies.

Reticulated shallow etch mesa isolation for controlling surface leakage in GaSb-based infrared detectors

NASA Astrophysics Data System (ADS)

Nolde, J. A.; Jackson, E. M.; Bennett, M. F.; Affouda, C. A.; Cleveland, E. R.; Canedy, C. L.; Vurgaftman, I.; Jernigan, G. G.; Meyer, J. R.; Aifer, E. H.

2017-07-01

Longwave infrared detectors using p-type absorbers composed of InAs-rich type-II superlattices (T2SLs) nearly always suffer from high surface currents due to carrier inversion on the etched sidewalls. Here, we demonstrate reticulated shallow etch mesa isolation (RSEMI): a structural method of reducing surface currents in longwave single-band and midwave/longwave dual-band detectors with p-type T2SL absorbers. By introducing a lateral shoulder to increase the separation between the n+ cathode and the inverted absorber surface, a substantial barrier to surface electron flow is formed. We demonstrate experimentally that the RSEMI process results in lower surface current, lower net dark current, much weaker dependence of the current on bias, and higher uniformity compared to mesas processed with a single deep etch. For the structure used, a shoulder width of 2 μm is sufficient to block surface currents.

Silicon nanowire photodetectors made by metal-assisted chemical etching

NASA Astrophysics Data System (ADS)

Xu, Ying; Ni, Chuan; Sarangan, Andrew

2016-09-01

Silicon nanowires have unique optical effects, and have potential applications in photodetectors. They can exhibit simple optical effects such as anti-reflection, but can also produce quantum confined effects. In this work, we have fabricated silicon photodetectors, and then post-processed them by etching nanowires on the incident surface. These nanowires were produced by a wet-chemical etching process known as the metal-assisted-chemical etching, abbreviated as MACE. N-type silicon substrates were doped by thermal diffusion from a solid ceramic source, followed by etching, patterning and contact metallization. The detectors were first tested for functionality and optical performance. The nanowires were then made by depositing an ultra-thin film of gold below its percolation thickness to produce an interconnected porous film. This was then used as a template to etch high aspect ratio nanowires into the face of the detectors with a HF:H2O2 mixture.

Effects of etching time on alpha tracks in solid state nuclear track detectors.

PubMed

Gillmore, Gavin; Wertheim, David; Crust, Simon

2017-01-01

Solid State Nuclear Track Detectors (SSNTDs) are used extensively for monitoring alpha particle radiation, neutron flux and cosmic ray radiation. Radon gas inhalation is regarded as being a significant contributory factor to lung cancer deaths in the UK each year. Gas concentrations are often monitored using CR39 based SSNTDs as the natural decay of radon results in alpha particles which form tracks in these detectors. Such tracks are normally etched for about 4h to enable microscopic analysis. This study examined the effect of etching time on the appearance of alpha tracks in SSNTDs by collecting 2D and 3D image datasets using laser confocal microscope imaging techniques. Etching times of 2 to 4h were compared and marked differences were noted in resultant track area. The median equivalent diameters of tracks were 20.2, 30.2 and 38.9μm for etching at 2, 3 and 4h respectively. Our results indicate that modern microscope imaging can detect and image the smaller size tracks seen for example at 3h etching time. Shorter etching times may give rise to fewer coalescing tracks although there is a balance to consider as smaller track sizes may be more difficult to image. Thus etching for periods of less than 4h clearly merits further investigation as this approach has the potential to improve accuracy in assessing the number of tracks. Copyright © 2016 Elsevier B.V. All rights reserved.

Integrated approach to improving local CD uniformity in EUV patterning

NASA Astrophysics Data System (ADS)

Liang, Andrew; Hermans, Jan; Tran, Timothy; Viatkina, Katja; Liang, Chen-Wei; Ward, Brandon; Chuang, Steven; Yu, Jengyi; Harm, Greg; Vandereyken, Jelle; Rio, David; Kubis, Michael; Tan, Samantha; Dusa, Mircea; Singhal, Akhil; van Schravendijk, Bart; Dixit, Girish; Shamma, Nader

2017-03-01

Extreme ultraviolet (EUV) lithography is crucial to enabling technology scaling in pitch and critical dimension (CD). Currently, one of the key challenges of introducing EUV lithography to high volume manufacturing (HVM) is throughput, which requires high source power and high sensitivity chemically amplified photoresists. Important limiters of high sensitivity chemically amplified resists (CAR) are the effects of photon shot noise and resist blur on the number of photons received and of photoacids generated per feature, especially at the pitches required for 7 nm and 5 nm advanced technology nodes. These stochastic effects are reflected in via structures as hole-to-hole CD variation or local CD uniformity (LCDU). Here, we demonstrate a synergy of film stack deposition, EUV lithography, and plasma etch techniques to improve LCDU, which allows the use of high sensitivity resists required for the introduction of EUV HVM. Thus, to improve LCDU to a level required by 5 nm node and beyond, film stack deposition, EUV lithography, and plasma etch processes were combined and co-optimized to enhance LCDU reduction from synergies. Test wafers were created by depositing a pattern transfer stack on a substrate representative of a 5 nm node target layer. The pattern transfer stack consisted of an atomically smooth adhesion layer and two hardmasks and was deposited using the Lam VECTOR PECVD product family. These layers were designed to mitigate hole roughness, absorb out-of-band radiation, and provide additional outlets for etch to improve LCDU and control hole CD. These wafers were then exposed through an ASML NXE3350B EUV scanner using a variety of advanced positive tone EUV CAR. They were finally etched to the target substrate using Lam Flex dielectric etch and Kiyo conductor etch systems. Metrology methodologies to assess dimensional metrics as well as chip performance and defectivity were investigated to enable repeatable patterning process development. Illumination conditions in EUV lithography were optimized to improve normalized image log slope (NILS), which is expected to reduce shot noise related effects. It can be seen that the EUV imaging contrast improvement can further reduce post-develop LCDU from 4.1 nm to 3.9 nm and from 2.8 nm to 2.6 nm. In parallel, etch processes were developed to further reduce LCDU, to control CD, and to transfer these improvements into the final target substrate. We also demonstrate that increasing post-develop CD through dose adjustment can enhance the LCDU reduction from etch. Similar trends were also observed in different pitches down to 40 nm. The solutions demonstrated here are critical to the introduction of EUV lithography in high volume manufacturing. It can be seen that through a synergistic deposition, lithography, and etch optimization, LCDU at a 40 nm pitch can be improved to 1.6 nm (3-sigma) in a target oxide layer and to 1.4 nm (3-sigma) at the photoresist layer.

Multi-Step Deep Reactive Ion Etching Fabrication Process for Silicon-Based Terahertz Components

NASA Technical Reports Server (NTRS)

Reck, Theodore (Inventor); Perez, Jose Vicente Siles (Inventor); Lee, Choonsup (Inventor); Cooper, Ken B. (Inventor); Jung-Kubiak, Cecile (Inventor); Mehdi, Imran (Inventor); Chattopadhyay, Goutam (Inventor); Lin, Robert H. (Inventor); Peralta, Alejandro (Inventor)

2016-01-01

A multi-step silicon etching process has been developed to fabricate silicon-based terahertz (THz) waveguide components. This technique provides precise dimensional control across multiple etch depths with batch processing capabilities. Nonlinear and passive components such as mixers and multipliers waveguides, hybrids, OMTs and twists have been fabricated and integrated into a small silicon package. This fabrication technique enables a wafer-stacking architecture to provide ultra-compact multi-pixel receiver front-ends in the THz range.

High-efficiency neutron detectors and methods of making same

DOEpatents

McGregor, Douglas S.; Klann, Raymond

2007-01-16

Neutron detectors, advanced detector process techniques and advanced compound film designs have greatly increased neutron-detection efficiency. One embodiment of the detectors utilizes a semiconductor wafer with a matrix of spaced cavities filled with one or more types of neutron reactive material such as ¹⁰B or ⁶LiF. The cavities are etched into both the front and back surfaces of the device such that the cavities from one side surround the cavities from the other side. The cavities may be etched via holes or etched slots or trenches. In another embodiment, the cavities are different-sized and the smaller cavities extend into the wafer from the lower surfaces of the larger cavities. In a third embodiment, multiple layers of different neutron-responsive material are formed on one or more sides of the wafer. The new devices operate at room temperature, are compact, rugged, and reliable in design.

Space Radiation Detector with Spherical Geometry

NASA Technical Reports Server (NTRS)

Wrbanek, John D. (Inventor); Fralick, Gustave C. (Inventor); Wrbanek, Susan Y. (Inventor)

2011-01-01

A particle detector is provided, the particle detector including a spherical Cherenkov detector, and at least one pair of detector stacks. In an embodiment of the invention, the Cherenkov detector includes a sphere of ultraviolet transparent material, coated by an ultraviolet reflecting material that has at least one open port. The Cherenkov detector further includes at least one photodetector configured to detect ultraviolet light emitted from a particle within the sphere. In an embodiment of the invention, each detector stack includes one or more detectors configured to detect a particle traversing the sphere.

Space Radiation Detector with Spherical Geometry

NASA Technical Reports Server (NTRS)

Wrbanek, John D. (Inventor); Fralick, Gustave C. (Inventor); Wrbanek, Susan Y. (Inventor)

2012-01-01

A particle detector is provided, the particle detector including a spherical Cherenkov detector, and at least one pair of detector stacks. In an embodiment of the invention, the Cherenkov detector includes a sphere of ultraviolet transparent material, coated by an ultraviolet reflecting material that has at least one open port. The Cherenkov detector further includes at least one photodetector configured to detect ultraviolet light emitted from a particle within the sphere. In an embodiment of the invention, each detector stack includes one or more detectors configured to detect a particle traversing the sphere.

Neutral beam and ICP etching of HKMG MOS capacitors: Observations and a plasma-induced damage model

NASA Astrophysics Data System (ADS)

Kuo, Tai-Chen; Shih, Tzu-Lang; Su, Yin-Hsien; Lee, Wen-Hsi; Current, Michael Ira; Samukawa, Seiji

2018-04-01

In this study, TiN/HfO2/Si metal-oxide-semiconductor (MOS) capacitors were etched by a neutral beam etching technique under two contrasting conditions. The configurations of neutral beam etching technique were specially designed to demonstrate a "damage-free" condition or to approximate "reactive-ion-etching-like" conditions to verify the effect of plasma-induced damage on electrical characteristics of MOS capacitors. The results show that by neutral beam etching (NBE), the interface state density (Dit) and the oxide trapped charge (Qot) were lower than routine plasma etching. Furthermore, the decrease in capacitor size does not lead to an increase in leakage current density, indicating less plasma induced side-wall damage. We present a plasma-induced gate stack damage model which we demonstrate by using these two different etching configurations. These results show that NBE is effective in preventing plasma-induced damage at the high-k/Si interface and on the high-k oxide sidewall and thus improve the electrical performance of the gate structure.

Self-Catalyzed Growth of Axial GaAs/GaAsSb Nanowires by Molecular Beam Epitaxy for Photodetectors

DTIC Science & Technology

2015-06-01

blende structure with mixture of stacking faults and twins and the presence of these faults were significantly reduced in the NWs grown on chemically...a) TEM image of the core NW (b) HR-TEM image displaying the stacking faults and twinning defects. (c)SAED pattern showing the ZB crystal structure...of stacking faults and twins and the presence of these faults were significantly reduced in the NWs grown on chemically etched substrates. For

Development of a Scintillation Detector and the Influence on Clinical Imaging

NASA Astrophysics Data System (ADS)

Panetta, Joseph Vincent

The detector is the functional unit within a Positron Emission Tomography (PET) scanner, serving to convert the energy of radiation emitted from a patient into positional information, and as such contributes significantly to the performance of the scanner. Excellent spatial resolution in continuous detectors that are thick has proven difficult to achieve using simple positioning algorithms, leading to research in the field to improve performance. This thesis aims to investigate the effect of modifications to the scintillation light spread within the bulk of the scintillator to improve performance, focusing on the use of laser induced optical barriers (LIOBs) etched within thick continuous crystals, and furthermore aims to translate the effect on detector performance to scanner quantitation in patient studies. The conventional continuous detector is first investigated by analyzing the various components of the detector as well as its limitations. It is seen that the performance of the detector is affected by a number of variables that either cannot be improved or may be improved only at the expense of greater complexity or computing time; these include the photodetector, the positioning algorithm, and Compton scatter in the detector. The performance of the detectors, however, is fundamentally determined by the light spread within the detector, and limited by the depth-dependence of the light spread and poor performance in the entrance region, motivating efforts to modify this aspect of the detector. The feasibility and potential of LIOBs to fine-tune this light spread and improve these limitations is then studied using both experiments and simulations. The behavior of the LIOBs in response to optical light is investigated, and the opacity of the etchings is shown to be dependent on the parameters of the etching procedure. Thick crystals were also etched with LIOBs in their entrance region in a grid pattern in order to improve the resolution in the entrance region. Measurements show an overall improvement in spatial resolution: the resolution in the etched region of the crystals is slightly improved (e.g., 0.8mm for a 25mm thick crystal), though in the unetched region, it is slightly degraded (e.g., 0.4mm for a 25mm thick crystal). While the depth-dependence of the response of the crystal is decreased, the depth-of-interaction (DOI) performance is degraded as well. Simulation studies informed by these measurements show that the properties of the LIOBs strongly affect the performance of the crystal, and ultimately further illustrate that trade-offs in spatial resolution, position sampling, and DOI resolution are inherent in varying the light spread using LIOBs in this manner; these may be used as a guide for future experiments. System Monte Carlo simulations were used to investigate the added benefit of improved detector spatial resolution and position sampling to the imaging performance of a whole-body scanner. These simulations compared the performance of scanners composed of conventional pixelated detectors to that of scanners using continuous crystals. Results showed that the improved performance (relative to that of 4-mm pixelated detectors) of continuous crystals with a 2-mm resolution, pertinent to both the etched 14mm thick crystal studied as well as potential designs with the etched 25mm thick crystal, increased the mean contrast recovery coefficient (CRC) of images by 22% for 5.5mm spheres. Last, a set of experiments aimed to test the correspondence between quantification in phantom and patient images using a lesion embedding methodology, so that any improvements determined using phantom studies may be understood clinically. The results show that the average CRC values for lesions embedded in the lung and liver agree well with those for lesions embedded in the phantom for all lesion sizes. In addition, the relative changes in CRC resulting from application of post-filters on the subject and phantom images are consistent within measurement uncertainty. This study shows that the improvements in CRC resulting from improved spatial resolution, measured using phantom studies in the simulations, are representative of improvements in quantitative accuracy in patient studies. While unmodified thick continuous detectors hold promise for both improved image quality and quantitation in whole-body imaging, excellent performance requires intensive hardware and computational solutions. Laser induced optical barriers offer the ability to modify the light spread within the scintillator to improve the intrinsic performance of the detector: while measurements with crystals etched with relatively transmissive etchings show a slight improvement in resolution, simulations show that the LIOBs may be fine-tuned to result in improved performance using relatively simple positioning algorithms. For systems in which DOI information is less important, and transverse resolution and sensitivity are paramount, etching thick detectors with this design, fine-tuned to the particular thickness of the crystal and application, is an interesting alternative to the standard detector design. (Abstract shortened by ProQuest.).

Stacked Metal Silicide/Silicon Far-Infrared Detectors

NASA Technical Reports Server (NTRS)

Maserjian, Joseph

1988-01-01

Selective doping of silicon in proposed metal silicide/silicon Schottky-barrier infrared photodetector increases maximum detectable wavelength. Stacking layers to form multiple Schottky barriers increases quantum efficiency of detector. Detectors of new type enhance capabilities of far-infrared imaging arrays. Grows by molecular-beam epitaxy on silicon waferscontaining very-large-scale integrated circuits. Imaging arrays of detectors made in monolithic units with image-preprocessing circuitry.

Instrument performance of a radon measuring system with the alpha-track detection technique.

PubMed

Tokonami, S; Zhuo, W; Ryuo, H; Yonehara, H; Yamada, Y; Shimo, M

2003-01-01

An instrument performance test has been carried out for a radon measuring system made in Hungary. The system measures radon using the alpha-track detection technique. It consists of three parts: the passive detector, the etching unit and the evaluation unit. A CR-39 detector is used as the radiation detector. Alpha-track reading and data analysis are carried out after chemical etching. The following subjects were examined in the present study: (1) radon sensitivity, (2) performance of etching and evaluation processes and (3) thoron sensitivity. The radon sensitivity of 6.9 x 10(-4) mm(-2) (Bq m(-3) d)(-1) was acceptable for practical application. The thoron sensitivity was estimated to be as low as 3.3 x 10(-5) mm(-2) (Bq m(-3) d)(-1) from the experimental study.

Etch challenges for DSA implementation in CMOS via patterning

NASA Astrophysics Data System (ADS)

Pimenta Barros, P.; Barnola, S.; Gharbi, A.; Argoud, M.; Servin, I.; Tiron, R.; Chevalier, X.; Navarro, C.; Nicolet, C.; Lapeyre, C.; Monget, C.; Martinez, E.

2014-03-01

This paper reports on the etch challenges to overcome for the implementation of PS-b-PMMA block copolymer's Directed Self-Assembly (DSA) in CMOS via patterning level. Our process is based on a graphoepitaxy approach, employing an industrial PS-b-PMMA block copolymer (BCP) from Arkema with a cylindrical morphology. The process consists in the following steps: a) DSA of block copolymers inside guiding patterns, b) PMMA removal, c) brush layer opening and finally d) PS pattern transfer into typical MEOL or BEOL stacks. All results presented here have been performed on the DSA Leti's 300mm pilot line. The first etch challenge to overcome for BCP transfer involves in removing all PMMA selectively to PS block. In our process baseline, an acetic acid treatment is carried out to develop PMMA domains. However, this wet development has shown some limitations in terms of resists compatibility and will not be appropriated for lamellar BCPs. That is why we also investigate the possibility to remove PMMA by only dry etching. In this work the potential of a dry PMMA removal by using CO based chemistries is shown and compared to wet development. The advantages and limitations of each approach are reported. The second crucial step is the etching of brush layer (PS-r-PMMA) through a PS mask. We have optimized this step in order to preserve the PS patterns in terms of CD, holes features and film thickness. Several integrations flow with complex stacks are explored for contact shrinking by DSA. A study of CD uniformity has been addressed to evaluate the capabilities of DSA approach after graphoepitaxy and after etching.

Array Technology for Terahertz Imaging

NASA Technical Reports Server (NTRS)

Reck, Theodore; Siles, Jose; Jung, Cecile; Gill, John; Lee, Choonsup; Chattopadhyay, Goutam; Mehdi, Imran; Cooper, Ken

2012-01-01

Heterodyne terahertz (0.3 - 3THz) imaging systems are currently limited to single or a low number of pixels. Drastic improvements in imaging sensitivity and speed can be achieved by replacing single pixel systems with an array of detectors. This paper presents an array topology that is being developed at the Jet Propulsion Laboratory based on the micromachining of silicon. This technique fabricates the array's package and waveguide components by plasma etching of silicon, resulting in devices with precision surpassing that of current metal machining techniques. Using silicon increases the versatility of the packaging, enabling a variety of orientations of circuitry within the device which increases circuit density and design options. The design of a two-pixel transceiver utilizing a stacked architecture is presented that achieves a pixel spacing of 10mm. By only allowing coupling from the top and bottom of the package the design can readily be arrayed in two dimensions with a spacing of 10mm x 18mm.

WSi2/Si multilayer sectioning by reactive ion etching for multilayer Laue lens fabrication

NASA Astrophysics Data System (ADS)

Bouet, N.; Conley, R.; Biancarosa, J.; Divan, R.; Macrander, A. T.

2010-09-01

Reactive ion etching (RIE) has been employed in a wide range of fields such as semiconductor fabrication, MEMS (microelectromechanical systems), and refractive x-ray optics with a large investment put towards the development of deep RIE. Due to the intrinsic differing chemistries related to reactivity, ion bombardment, and passivation of materials, the development of recipes for new materials or material systems can require intense effort and resources. For silicon in particular, methods have been developed to provide reliable anisotropic profiles with good dimensional control and high aspect ratios1,2,3, high etch rates, and excellent material to mask etch selectivity. A multilayer Laue lens4 is an x-ray focusing optic, which is produced by depositing many layers of two materials with differing electron density in a particular stacking sequence where the each layer in the stack satisfies the Fresnel zone plate law. When this stack is sectioned to allow side-illumination with radiation, the diffracted exiting radiation will constructively interfere at the focal point. Since the first MLLs were developed at Argonne in the USA in 20064, there have been published reports of MLL development efforts in Japan5, and, very recently, also in Germany6. The traditional technique for sectioning multilayer Laue lens (MLL) involves mechanical sectioning and polishing7, which is labor intensive and can induce delamination or structure damage and thereby reduce yield. If a non-mechanical technique can be used to section MLL, it may be possible to greatly shorten the fabrication cycle, create more usable optics from the same amount of deposition substrate, and perhaps develop more advanced structures to provide greater stability or flexibility. Plasma etching of high aspect-ratio multilayer structures will also expand the scope for other types of optics fabrication (such as gratings, zone plates, and so-on). However, well-performing reactive ion etching recipes have been developed for only a small number of materials, and even less recipes exist for concurrent etching of more than one element so a fully material specific process needs to be developed. In this paper, sectioning of WSi2/Si multilayers for MLL fabrication using fluorinated gases is investigated. The main goals were to demonstrate the feasibility of this technique, achievement of high anisotropy, adequate sidewall roughness control and high etching rates. We note that this development for MLL sidewalls should be distinguished from work on improving aspect ratios in traditional Fresnel zone plates. Aspect ratios for MLL sidewalls are not similarly constrained.

Proton induced target fragmentation studies on solid state nuclear track detectors using Carbon radiators

NASA Astrophysics Data System (ADS)

Szabó, J.; Pálfalvi, J. K.; Strádi, A.; Bilski, P.; Swakoń, J.; Stolarczyk, L.

2018-04-01

One of the limiting factors of an astronaut's career is the dose received from space radiation. High energy protons, being the main components of the complex radiation field present on a spacecraft, give a significant contribution to the dose. To investigate the behavior of solid state nuclear track detectors (SSNTDs) if they are irradiated by such particles, SSNTD stacks containing carbon blocks were exposed to high energy proton beams (70, 100, 150 and 230 MeV) at the Proteus cyclotron, IFJ PAN -Krakow. The incident protons cannot be detected directly; however, tracks of secondary particles, recoils and fragments of the constituent atoms of the detector material and of the carbon radiator are formed. It was found that as the proton energy increases, the number of tracks induced in the PADC material by secondary particles decreases. From the measured geometrical parameters of the tracks the linear energy transfer (LET) spectrum and the dosimetric quantities were determined, applying appropriate calibration. In the LET spectra the LET range of the most important secondary particles could be identified and their abundance showed differences in the spectra if the detectors were short or long etched. The LET spectra obtained on the SSNTDs irradiated by protons were compared to LET spectra of detectors flown on the International Space Station (ISS): they were quite similar, resulting in a quality factor difference of only 5%. Thermoluminescent detectors (TLDs) were applied in each case to measure the dose from primary protons and other lower LET particles present in space. Comparing and analyzing the results of the TLD and SSNTD measurements, it was obtained that proton induced target fragments contributed to the total absorbed dose in 3.2% and to the dose equivalent in 14.2% in this particular space experiment.

Uniformity studies of inductively coupled plasma etching in fabrication of HgCdTe detector arrays

NASA Astrophysics Data System (ADS)

Bommena, R.; Velicu, S.; Boieriu, P.; Lee, T. S.; Grein, C. H.; Tedjojuwono, K. K.

2007-04-01

Inductively coupled plasma (ICP) chemistry based on a mixture of CH 4, Ar, and H II was investigated for the purpose of delineating HgCdTe mesa structures and vias typically used in the fabrication of second and third generation infrared photo detector arrays. We report on ICP etching uniformity results and correlate them with plasma controlling parameters (gas flow rates, total chamber pressure, ICP power and RF power). The etching rate and surface morphology of In-doped MWIR and LWIR HgCdTe showed distinct dependences on the plasma chemistry, total pressure and RF power. Contact stylus profilometry and cross-section scanning electron microscopy (SEM) were used to characterize the anisotropy of the etched profiles obtained after various processes and a standard deviation of 0.06 μm was obtained for etch depth on 128 x 128 format array vias. The surface morphology and the uniformity of the etched surfaces were studied by plan view SEM. Atomic force microscopy was used to make precise assessments of surface roughness.

Superheating Suppresses Structural Disorder in Layered BiI3 Semiconductors Grown by the Bridgman Method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johns, Paul M.; Sulekar, Soumitra; Yeo, Shinyoung

2016-01-01

The susceptibility of layered structures to stacking faults is a problem in some of the more attractive semiconductor materials for ambient-temperature radiation detectors. In the work presented here, Bridgman-grown BiI3 layered single crystals are investigated to understand and eliminate this structural disorder, which reduces radiation detector performance. The use of superheating gradients has been shown to improve crystal quality in non-layered semiconductor crystals; thus the technique was here explored to improve the growth of BiI3. When investigating the homogeneity of non-superheated crystals, highly geometric void defects were found to populate the bulk of the crystals. Applying a superheating gradient tomore » the melt prior to crystal growth improved structural quality and decreased defect density from the order of 4600 voids per cm3 to 300 voids per cm3. Corresponding moderate improvements to electronic properties also resulted from the superheat gradient method of crystal growth. Comparative measurements through infrared microscopy, etch-pit density, x-ray rocking curves, and sheet resistivity readings show that superheat gradients in BiI3 growth led to higher quality crystals.« less

Accelerating CR-39 Track Detector Processing by Utilizing UV

NASA Astrophysics Data System (ADS)

Sparling, Jonathan; Padalino, Stephen; McLean, James; Sangster, Craig; Regan, Sean

2017-10-01

The use of CR-39 plastic as a Solid State Nuclear Track Detector is an effective technique for obtaining data in high energy particle experiments including inertial confinement fusion. To reveal particle tracks after irradiation, CR-39 is chemically etched in NaOH at 80°C, producing micron-scale signal pits at the nuclear track sites. It has been shown that illuminating CR-39 with UV light prior to etching increases bulk and track etch rates, especially when combined with elevated temperature. Spectroscopic analysis for amorphous solids has helped identify which UV wavelengths are most effective at enhancing etch rates. Absorption peaks found in the near infrared range provide for efficient sample heating, and may allow targeting cooperative IR-UV chemistry. Avoiding UV induced noise can be achieved through variations in absorption depths with wavelength. Vacuum drying and water absorption tests allow measurement of the resulting variation of bulk etch rate with depth. Funded in part by the NSF and an Department of Energy Grant through the Lab of Laser Energetics.

SiliPET: An ultra-high resolution design of a small animal PET scanner based on stacks of double-sided silicon strip detector

NASA Astrophysics Data System (ADS)

Di Domenico, Giovanni; Zavattini, Guido; Cesca, Nicola; Auricchio, Natalia; Andritschke, Robert; Schopper, Florian; Kanbach, Gottfried

2007-02-01

We investigated with Monte Carlo simulations, using the EGSNrcMP code, the capabilities of a small animal PET scanner based on four stacks of double-sided silicon strip detectors. Each stack consists of 40 silicon detectors with dimension of 60×60×1 mm 3 and 128 orthogonal strips on each side. Two coordinates of the interaction are given by the strips, whereas the third coordinate is given by the detector number in the stack. The stacks are arranged to form a box of 5×5×6 cm 3 with minor sides opened; the box represents the minimal FOV of the scanner. The performance parameters of the SiliPET scanner have been estimated giving a (positron range limited) spatial resolution of 0.52 mm FWHM, and an absolute sensitivity of 5.1% at the center of system. Preliminary results of a proof of principle measurement done with the MEGA advanced Compton imager using a ≈1 mm diameter 22Na source, showed a focal ray tracing FWHM of 1 mm.

Stacked silicide/silicon mid- to long-wavelength infrared detector

NASA Technical Reports Server (NTRS)

Maserjian, Joseph (Inventor)

1990-01-01

The use of stacked Schottky barriers (16) with epitaxially grown thin silicides (10) combined with selective doping (22) of the barriers provides high quantum efficiency infrared detectors (30) at longer wavelengths that is compatible with existing silicon VLSI technology.

Stacked silicide/silicon mid- to long-wavelength infrared detector

DOEpatents

Maserjian, Joseph

1990-03-13

The use of stacked Schottky barriers (16) with epitaxially grown thin silicides (10) combined with selective doping (22) of the barriers provides high quantum efficiency infrared detectors (30) at longer wavelengths that is compatible with existing silicon VLSI technology.

High T(sub c) Superconducting Bolometer on Chemically Etched 7 Micrometer Thick Sapphire

NASA Technical Reports Server (NTRS)

Lakew, B.; Brasunas, J. C.; Pique, A.; Fettig, R.; Mott, B.; Babu, S.; Cushman, G. M.

1997-01-01

A transition-edge IR detector, using a YBa2Cu3O(7-x) (YBCO) thin film deposited on a chemically etched, 7 micrometer thick sapphire substrate has been built. To our knowledge it is the first such high T(sub c) superconducting (HTS) bolometer on chemically thinned sapphire. The peak optical detectivity obtained is l.2 x 10(exp 10) cmHz(sup 1/2)/W near 4Hz. Result shows that it is possible to obtain high detectivity with thin films on etched sapphire with no processing after the deposition of the YBCO film. We discuss the etching process and its potential for micro-machining sapphire and fabricating 2-dimensional detector arrays with suspended sapphire membranes. A 30 micrometer thick layer of gold black provided IR absorption. Comparison is made with the current state of the art on silicon substrates.

Variable Temperature Performance of a Si(Li) Detector Stack

NASA Technical Reports Server (NTRS)

Hubbard, G. Scott; McMurray, Robert E., Jr.; Keller, R. G.; Wercinski, P. F.; Walton, J. T.; Wong, Y. K.

1994-01-01

New experimental data is presented which displays 137Cs resolution of both single Si(Li) devices and a detector stack 2 cm in height as a function of temperature (85 K greater than or equal to T greater than or equal to 245 K). We also discuss variations in photopeak shape which indicate that detector charge collection may be temperature dependent over the range of interest.

Direct-Write Laser Grayscale Lithography for Multilayer Lead Zirconate Titanate Thin Films.

PubMed

Benoit, Robert R; Jordan, Delaney M; Smith, Gabriel L; Polcawich, Ronald G; Bedair, Sarah S; Potrepka, Daniel M

2018-05-01

Direct-write laser grayscale lithography has been used to facilitate a single-step patterning technique for multilayer lead zirconate titanate (PZT) thin films. A 2.55- -thick photoresist was patterned with a direct-write laser. The intensity of the laser was varied to create both tiered and sloped structures that are subsequently transferred into multilayer PZT(52/48) stacks using a single Ar ion-mill etch. Traditional processing requires a separate photolithography step and an ion mill etch for each layer of the substrate, which can be costly and time consuming. The novel process allows access to buried electrode layers in the multilayer stack in a single photolithography step. The grayscale process was demonstrated on three 150-mm diameter Si substrates configured with a 0.5- -thick SiO 2 elastic layer, a base electrode of Pt/TiO 2 , and a stack of four PZT(52/48) thin films of either 0.25- thickness per layer or 0.50- thickness per layer, and using either Pt or IrO 2 electrodes above and below each layer. Stacked capacitor structures were patterned and results will be reported on the ferroelectric and electromechanical properties using various wiring configurations and compared to comparable single layer PZT configurations.

Uncooled infrared photon detector and multicolor infrared detection using microoptomechanical sensors

DOEpatents

Datskos, Panagiotis G.; Rajic, Solobodan; Datskou, Irene C.

1999-01-01

Systems and methods for infrared detection are described. An optomechanical photon detector includes a semiconductor material and is based on measurement of a photoinduced lattice strain. A multicolor infrared sensor includes a stack of frequency specific optomechanical detectors. The stack can include one, or more, of the optomechanical photon detectors that function based on the measurement of photoinduced lattice strain. The systems and methods provide advantages in that rapid, sensitive multicolor infrared imaging can be performed without the need for a cooling subsystem.

MEMS-based silicon cantilevers with integrated electrothermal heaters for airborne ultrafine particle sensing

NASA Astrophysics Data System (ADS)

Wasisto, Hutomo Suryo; Merzsch, Stephan; Waag, Andreas; Peiner, Erwin

2013-05-01

The development of low-cost and low-power MEMS-based cantilever sensors for possible application in hand-held airborne ultrafine particle monitors is described in this work. The proposed resonant sensors are realized by silicon bulk micromachining technology with electrothermal excitation, piezoresistive frequency readout, and electrostatic particle collection elements integrated and constructed in the same sensor fabrication process step of boron diffusion. Built-in heating resistor and full Wheatstone bridge are set close to the cantilever clamp end for effective excitation and sensing, respectively, of beam deflection. Meanwhile, the particle collection electrode is located at the cantilever free end. A 300 μm-thick, phosphorus-doped silicon bulk wafer is used instead of silicon-on-insulator (SOI) as the starting material for the sensors to reduce the fabrication costs. To etch and release the cantilevers from the substrate, inductively coupled plasma (ICP) cryogenic dry etching is utilized. By controlling the etching parameters (e.g., temperature, oxygen content, and duration), cantilever structures with thicknesses down to 10 - 20 μm are yielded. In the sensor characterization, the heating resistor is heated and generating thermal waves which induce thermal expansion and further cause mechanical bending strain in the out-of-plane direction. A resonant frequency of 114.08 +/- 0.04 kHz and a quality factor of 1302 +/- 267 are measured in air for a fabricated rectangular cantilever (500x100x13.5 μm3). Owing to its low power consumption of a few milliwatts, this electrothermal cantilever is suitable for replacing the current external piezoelectric stack actuator in the next generation of the miniaturized cantilever-based nanoparticle detector (CANTOR).

Use of hydrogen etching to remove existing dislocations in GaN epitaxial layers

NASA Astrophysics Data System (ADS)

Yeh, Yen-Hsien; Chu, Chung-Ming; Wu, Yin-Hao; Hsu, Ying-Chia; Yu, Tzu-Yi; Lee, Wei-I.

2015-08-01

In this paper, based on the anisotropic nature of hydrogen (H2) etching on GaN, we describe a new approach to the removal of threading dislocations in GaN layers. The top surfaces of c-plane (Ga-face) and a-plane GaNs are considered stable in H2; therefore, H2 etches only crystal imperfections such as dislocation and basal plane stacking fault (BSF) sites. We used H2 to etch undoped c-plane GaN, n-type c-plane GaN, a-plane GaN, and an InGaN/GaN multiple quantum well structure. Several examinations were performed, indicating deep cavities on the c-plane GaN samples after H2 etching; furthermore, gorge-like grooves were observed on the a-plane GaN samples. The deep cavities on the c-plane GaN were considered the etched dislocation sites, and the gorge-like grooves on the a-plane GaN were considered the etched BSF sites. Photoluminescence measurements were performed and the results indicated that the H2-etched samples demonstrate superior optoelectronic properties, probably because of the elimination of dislocations.

Track analysis of laser-illuminated etched track detectors using an opto-digital imaging system

NASA Astrophysics Data System (ADS)

Eghan, Moses J.; Buah-Bassuah, Paul K.; Oppon, Osborne C.

2007-11-01

An opto-digital imaging system for counting and analysing tracks on a LR-115 detector is described. One batch of LR-115 track detectors was irradiated with Am-241 for a determined period and distance for linearity test and another batch was exposed to radon gas. The laser-illuminated etched track detector area was imaged, digitized and analysed by the system. The tracks that were counted on the opto-digital system with the aid of media cybernetics software as well as spark gap counter showed comparable track density results ranging between 1500 and 2750 tracks cm-2 and 65 tracks cm-2 in the two different batch detector samples with 0.5% and 1% track counts, respectively. Track sizes of the incident alpha particles from the radon gas on the LR-115 detector demonstrating different track energies are statistically and graphically represented. The opto-digital imaging system counts and measures other track parameters at an average process time of 3-5 s.

Graphoepitaxy integration and pattern transfer of lamellar silicon-containing high-chi block copolymers

NASA Astrophysics Data System (ADS)

Bézard, P.; Chevalier, X.; Legrain, A.; Navarro, C.; Nicolet, C.; Fleury, G.; Cayrefourcq, I.; Tiron, R.; Zelsmann, M.

2018-03-01

In this work, we present our recent achievements on the integration and transfer etching of a novel silicon-containing high-χ block copolymer for lines/spaces applications. Developed carbo-silane BCPs are synthesized under industrial conditions and present periodicities as low as 14 nm. A full directed self-assembly by graphoepitaxy process is shown using standard photolithography stacks and all processes are performed on 300 mm wafer compatible tools. Specific plasma processes are developed to isolate perpendicular lamellae and sub-12 nm features are finally transferred into silicon substrates. The quality of the final BCP hard mask (CDU, LWR, LER) are also investigated. Finally, thanks to the development of dedicated neutral layers and top-coats allowing perpendicular orientations, it was possible to investigate plasma etching experiments on full-sheets at 7 nm resolution, opening the way to the integration of these polymers in chemoepitaxy stacks.

Progress in design and fabrication of resonator quantum well infrared photodetectors (R-QWIP) (Conference Presentation)

NASA Astrophysics Data System (ADS)

Sun, Jason N.; Choi, Kwong-Kit; Olver, Kimberley A.; Fu, Richard X.

2017-05-01

Resonator-Quantum Well Infrared Photo detectors (R-QWIPs) are the next generation of QWIP detectors that use resonances to increase the quantum efficiency (QE). Recently, we are exploring R-QWIPs for broadband long wavelength applications. To achieve the expected performance, two optimized inductively coupled plasma (ICP) etching processes (selective and non-selective) are developed. Our selective ICP etching process has a nearly infinite selectivity of etching GaAs over Ga1-xAlxAs. By using the etching processes, two format (1Kx1K and 40x40) detectors with 25 μm pixel pitch were fabricated successfully. In despite of a moderate doping of 0.5 × 1018 cm-3 and a thin active layer thickness of 0.6 or 1.3 μm, we achieved a quantum efficiency 35% and 37% for 8 quantum wells and 19 quantum wells respectively. The temperature at which photocurrent equals dark current is about 66 K under F/2 optics for a cutoff wavelength up to 11 μm. The NEΔT of the FPAs is estimated to be 22 mK at 2 ms integration time and 60 K operating temperature. This good result thus exemplifies the advantages of R-QWIP.

Individually addressable cathodes with integrated focusing stack or detectors

DOEpatents

Thomas, Clarence E.; Baylor, Larry R.; Voelkl, Edgar; Simpson, Michael L.; Paulus, Michael J.; Lowndes, Douglas; Whealton, John; Whitson, John C.; Wilgen, John B.

2005-07-12

Systems and method are described for addressable field emission array (AFEA) chips. A plurality of individually addressable cathodes are integrated with an electrostatic focusing stack and/or a plurality of detectors on the addressable field emission array. The systems and methods provide advantages including the avoidance of space-charge blow-up.

Effects of epitaxial structure and processing on electrical characteristics of InAs-based nBn infrared detectors

NASA Astrophysics Data System (ADS)

Du, X.; Savich, G. R.; Marozas, B. T.; Wicks, G. W.

2017-02-01

The conventional processing of the III-V nBn photodetectors defines mesa devices by etching the contact n-layer and stopping immediately above the barrier, i.e., a shallow etch. This processing enables great suppression of surface leakage currents without having to explore surface passivation techniques. However, devices that are made with this processing scheme are subject to lateral diffusion currents. To address the lateral diffusion current, we compare the effects of different processing approaches and epitaxial structures of nBn detectors. The conventional solution for eliminating lateral diffusion current, a deep etch through the barrier and the absorber, creates increased dark currents and an increased device failure rate. To avoid deep etch processing, a new device structure is proposed, the inverted-nBn structure. By comparing with the conventional nBn structure, the results show that the lateral diffusion current is effectively eliminated in the inverted-nBn structure without elevating the dark currents.

Development of an MRI-compatible digital SiPM detector stack for simultaneous PET/MRI.

PubMed

Düppenbecker, Peter M; Weissler, Bjoern; Gebhardt, Pierre; Schug, David; Wehner, Jakob; Marsden, Paul K; Schulz, Volkmar

2016-02-01

Advances in solid-state photon detectors paved the way to combine positron emission tomography (PET) and magnetic resonance imaging (MRI) into highly integrated, truly simultaneous, hybrid imaging systems. Based on the most recent digital SiPM technology, we developed an MRI-compatible PET detector stack, intended as a building block for next generation simultaneous PET/MRI systems. Our detector stack comprises an array of 8 × 8 digital SiPM channels with 4 mm pitch using Philips Digital Photon Counting DPC 3200-22 devices, an FPGA for data acquisition, a supply voltage control system and a cooling infrastructure. This is the first detector design that allows the operation of digital SiPMs simultaneously inside an MRI system. We tested and optimized the MRI-compatibility of our detector stack on a laboratory test bench as well as in combination with a Philips Achieva 3 T MRI system. Our design clearly reduces distortions of the static magnetic field compared to a conventional design. The MRI static magnetic field causes weak and directional drift effects on voltage regulators, but has no direct impact on detector performance. MRI gradient switching initially degraded energy and timing resolution. Both distortions could be ascribed to voltage variations induced on the bias and the FPGA core voltage supply respectively. Based on these findings, we improved our detector design and our final design shows virtually no energy or timing degradations, even during heavy and continuous MRI gradient switching. In particular, we found no evidence that the performance of the DPC 3200-22 digital SiPM itself is degraded by the MRI system.

Increased Multilayer Fabrication and RF Characterization of a High-Density Stacked MIM Capacitor Based on Selective Etching

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tseng, VFG; Xie, HK

2014-07-01

This paper presents the fabrication and characterization of a high-density multilayer stacked metal-insulator-metal (MIM) capacitor based on a novel process of depositing the MIM multilayer on pillars followed by polishing and selective etching steps to form a stacked capacitor with merely three photolithography steps. In this paper, the pillars were made of glass to prevent substrate loss, whereas an oxide-nitride-oxide dielectric was employed for lower leakage, better voltage/frequency linearity, and better stress compensation. MIM capacitors with six dielectric layers were successfully fabricated, yielding capacitance density of 3.8 fF/mu m(2), maximum capacitance of 2.47 nF, and linear and quadratic voltage coefficientsmore » of capacitance below 21.2 ppm/V and 2.31 ppm/V-2. The impedance was measured from 40 Hz to 3 GHz, and characterized by an analytically derived equivalent circuit model to verify the radio frequency applicability. The multilayer stacking-induced plate resistance mismatch and its effect on the equivalent series resistance (ESR) and effective capacitance was also investigated, which can be counteracted by a corrected metal thickness design. A low ESR of 800 m Omega was achieved, whereas the self-resonance frequency was >760 MHz, successfully demonstrating the feasibility of this method to scale up capacitance densities for high-quality-factor, high-frequency, and large-value MIM capacitors.« less

Ionizing Radiation Detector

DOEpatents

Wright, Gomez W.; James, Ralph B.; Burger, Arnold; Chinn, Douglas A.

2003-11-18

A CdZnTe (CZT) crystal provided with a native CdO dielectric coating to reduce surface leakage currents and thereby, improve the resolution of instruments incorporating detectors using CZT crystals is disclosed. A two step process is provided for forming the dielectric coating which includes etching the surface of a CZT crystal with a solution of the conventional bromine/methanol etch treatment, and passivating the CZT crystal surface with a solution of 10 w/o NH.sub.4 F and 10 w/o H.sub.2 O.sub.2 in water after attaching electrical contacts to the crystal surface.

Unbiased roughness measurements: the key to better etch performance

NASA Astrophysics Data System (ADS)

Liang, Andrew; Mack, Chris; Sirard, Stephen; Liang, Chen-wei; Yang, Liu; Jiang, Justin; Shamma, Nader; Wise, Rich; Yu, Jengyi; Hymes, Diane

2018-03-01

Edge placement error (EPE) has become an increasingly critical metric to enable Moore's Law scaling. Stochastic variations, as characterized for lines by line width roughness (LWR) and line edge roughness (LER), are dominant factors in EPE and known to increase with the introduction of EUV lithography. However, despite recommendations from ITRS, NIST, and SEMI standards, the industry has not agreed upon a methodology to quantify these properties. Thus, differing methodologies applied to the same image often result in different roughness measurements and conclusions. To standardize LWR and LER measurements, Fractilia has developed an unbiased measurement that uses a raw unfiltered line scan to subtract out image noise and distortions. By using Fractilia's inverse linescan model (FILM) to guide development, we will highlight the key influences of roughness metrology on plasma-based resist smoothing processes. Test wafers were deposited to represent a 5 nm node EUV logic stack. The patterning stack consists of a core Si target layer with spin-on carbon (SOC) as the hardmask and spin-on glass (SOG) as the cap. Next, these wafers were exposed through an ASML NXE 3350B EUV scanner with an advanced chemically amplified resist (CAR). Afterwards, these wafers were etched through a variety of plasma-based resist smoothing techniques using a Lam Kiyo conductor etch system. Dense line and space patterns on the etched samples were imaged through advanced Hitachi CDSEMs and the LER and LWR were measured through both Fractilia and an industry standard roughness measurement software. By employing Fractilia to guide plasma-based etch development, we demonstrate that Fractilia produces accurate roughness measurements on resist in contrast to an industry standard measurement software. These results highlight the importance of subtracting out SEM image noise to obtain quicker developmental cycle times and lower target layer roughness.

Image processing analysis of nuclear track parameters for CR-39 detector irradiated by thermal neutron

NASA Astrophysics Data System (ADS)

Al-Jobouri, Hussain A.; Rajab, Mustafa Y.

2016-03-01

CR-39 detector which covered with boric acid (H3Bo3) pellet was irradiated by thermal neutrons from (241Am - 9Be) source with activity 12Ci and neutron flux 105 n. cm-2. s-1. The irradiation times -TD for detector were 4h, 8h, 16h and 24h. Chemical etching solution for detector was sodium hydroxide NaOH, 6.25N with 45 min etching time and 60 C˚ temperature. Images of CR-39 detector after chemical etching were taken from digital camera which connected from optical microscope. MATLAB software version 7.0 was used to image processing. The outputs of image processing of MATLAB software were analyzed and found the following relationships: (a) The irradiation time -TD has behavior linear relationships with following nuclear track parameters: i) total track number - NT ii) maximum track number - MRD (relative to track diameter - DT) at response region range 2.5 µm to 4 µm iii) maximum track number - MD (without depending on track diameter - DT). (b) The irradiation time -TD has behavior logarithmic relationship with maximum track number - MA (without depending on track area - AT). The image processing technique principally track diameter - DT can be take into account to classification of α-particle emitters, In addition to the contribution of these technique in preparation of nano- filters and nano-membrane in nanotechnology fields.

Calibration and GEANT4 Simulations of the Phase II Proton Compute Tomography (pCT) Range Stack Detector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Uzunyan, S. A.; Blazey, G.; Boi, S.

Northern Illinois University in collaboration with Fermi National Accelerator Laboratory (FNAL) and Delhi University has been designing and building a proton CT scanner for applications in proton treatment planning. The Phase II proton CT scanner consists of eight planes of tracking detectors with two X and two Y coordinate measurements both before and after the patient. In addition, a range stack detector consisting of a stack of thin scintillator tiles, arranged in twelve eight-tile frames, is used to determine the water equivalent path length (WEPL) of each track through the patient. The X-Y coordinates and WEPL are required input formore » image reconstruction software to find the relative (proton) stopping powers (RSP) value of each voxel in the patient and generate a corresponding 3D image. In this Note we describe tests conducted in 2015 at the proton beam at the Central DuPage Hospital in Warrenville, IL, focusing on the range stack calibration procedure and comparisons with the GEANT~4 range stack simulation.« less

Modular multi-element high energy particle detector

DOEpatents

Coon, D.D.; Elliott, J.P.

1990-01-02

Multi-element high energy particle detector modules comprise a planar heavy metal carrier of tungsten alloy with planar detector units uniformly distributed over one planar surface. The detector units are secured to the heavy metal carrier by electrically conductive adhesive so that the carrier serves as a common ground. The other surface of each planar detector unit is electrically connected to a feedthrough electrical terminal extending through the carrier for front or rear readout. The feedthrough electrical terminals comprise sockets at one face of the carrier and mating pins projecting from the other face, so that any number of modules may be plugged together to create a stack of modules of any desired number of radiation lengths. The detector units each comprise four, preferably rectangular, p-i-n diode chips arranged around the associated feedthrough terminal to form a square detector unit providing at least 90% detector element coverage of the carrier. Integral spacers projecting from the carriers extend at least partially along the boundaries between detector units to space the p-i-n diode chips from adjacent carriers in a stack. The spacers along the perimeters of the modules are one-half the width of the interior spacers so that when stacks of modules are arranged side by side to form a large array of any size or shape, distribution of the detector units is uniform over the entire array. 5 figs.

Modular multi-element high energy particle detector

DOEpatents

Coon, Darryl D.; Elliott, John P.

1990-01-02

Multi-element high energy particle detector modules comprise a planar heavy metal carrier of tungsten alloy with planar detector units uniformly distributed over one planar surface. The detector units are secured to the heavy metal carrier by electrically conductive adhesive so that the carrier serves as a common ground. The other surface of each planar detector unit is electrically connected to a feedthrough electrical terminal extending through the carrier for front or rear readout. The feedthrough electrical terminals comprise sockets at one face of the carrier and mating pins porjecting from the other face, so that any number of modules may be plugged together to create a stack of modules of any desired number of radiation lengths. The detector units each comprise four, preferably rectangular, p-i-n diode chips arranged around the associated feedthrough terminal to form a square detector unit providing at least 90% detector element coverage of the carrier. Integral spacers projecting from the carriers extend at least partially along the boundaries between detector units to space the p-i-n diode chips from adjacent carriers in a stack. The spacers along the perimeters of the modules are one-half the width of the interior spacers so that when stacks of modules are arranged side by side to form a large array of any size or shape, distribution of the detector units is uniform over the entire array.

EUV mirror based absolute incident flux detector

DOEpatents

Berger, Kurt W.

2004-03-23

A device for the in-situ monitoring of EUV radiation flux includes an integrated reflective multilayer stack. This device operates on the principle that a finite amount of in-band EUV radiation is transmitted through the entire multilayer stack. This device offers improvements over existing vacuum photo-detector devices since its calibration does not change with surface contamination.

Improvement of density resolution in short-pulse hard x-ray radiographic imaging using detector stacks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Borm, B.; Gärtner, F.; Khaghani, D.

2016-09-15

We demonstrate that stacking several imaging plates (IPs) constitutes an easy method to increase hard x-ray detection efficiency. Used to record x-ray radiographic images produced by an intense-laser driven hard x-ray backlighter source, the IP stacks resulted in a significant improvement of the radiograph density resolution. We attribute this to the higher quantum efficiency of the combined detectors, leading to a reduced photon noise. Electron-photon transport simulations of the interaction processes in the detector reproduce the observed contrast improvement. Increasing the detection efficiency to enhance radiographic imaging capabilities is equally effective as increasing the x-ray source yield, e.g., by amore » larger drive laser energy.« less

Microscale mass spectrometry systems, devices and related methods

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ramsey, John Michael

Mass spectrometry systems or assemblies therefore include an ionizer that includes at least one planar conductor, a mass analyzer with a planar electrode assembly, and a detector comprising at least one planar conductor. The ionizer, the mass analyzer and the detector are attached together in a compact stack assembly. The stack assembly has a perimeter that bounds an area that is between about 0.01 mm.sup.2 to about 25 cm.sup.2 and the stack assembly has a thickness that is between about 0.1 mm to about 25 mm.

Microscale mass spectrometry systems, devices and related methods

DOEpatents

Ramsey, John Michael

2016-06-21

Mass spectrometry systems or assemblies therefore include an ionizer that includes at least one planar conductor, a mass analyzer with a planar electrode assembly, and a detector comprising at least one planar conductor. The ionizer, the mass analyzer and the detector are attached together in a compact stack assembly. The stack assembly has a perimeter that bounds an area that is between about 0.01 mm.sup.2 to about 25 cm.sup.2 and the stack assembly has a thickness that is between about 0.1 mm to about 25 mm.

HAMLET -Matroshka IIA and IIB experiments aboard the ISS: comparison of organ doses

NASA Astrophysics Data System (ADS)

Kato, Zoltan; Reitz, Guenther; Berger, Thomas; Bilski, Pawel; Hajek, Michael; Sihver, Lembit; Palfalvi, Jozsef K.; Hager, Luke; Burmeister, Soenke

The Matroshka experiments and the related FP7 HAMLET project aimed to study the dose burden of the cosmic rays in the organs of the crew working inside and outside the ISS. Two of the experiments will be discussed. They were performed in two different locations inside the ISS: during the Matroshka 2A (in 2006) the phantom was stored in the Russian Docking Module (Pirs), while during the Matroshka 2B (in 2007-08) it was inside the Russian Service Module (Zvezda). Both experiments were performed in the decreasing phase of the solar cycle. Solid state nuclear track detectors (SSNTD) were applied to investigate the dose contribution of the high LET radiation above ˜10 keV/µm. Two configurations of SSNTDs stacks were constructed: one for the exposure in the so called organ dose boxes (in the lung and kidney), another one for the skin dose measurements, embedded in the nomex poncho of the Phantom. In addition a reference package was placed outside the phantom. After exposure the detectors were transferred to the Earth for data evaluation. Short and long etching procedures were applied to distinguish the high and low LET particles, respectively. The particle tracks were evaluated by a semi automated image analyzer. Addi-tionally manual track parameter measurements were performed on very long tracks. As the result of measurements the LET spectra were deduced. Based on these spectra, the absorbed dose, the dose equivalent and the mean quality factor were calculated. The configuration of the stacks, the methods of the calibration and evaluation and finally the results will be presented and compared. The multiple etching and the combined evaluation method allowed to determine the fraction of the dose originated from HZE particles (Z>2 and range > major axis). Further on, data eval-uation was performed to separate the secondary particles (target fragments) from the primary particles. Although the number of high LET particles above a ˜80 keV/µm was found to be higher during the Matroshka 2B experiment than in the previous phase it was not possible to attribute this observation to the lower Sun activity in 2008, since the locations inside the ISS were different. The HAMLET project is funded by the European Commission under the EUs Seventh Frame-work Programme (FP7) under Project Nr: 218817 and coordinated by the German Aerospace Center (DLR) http://www-fp7-hamlet.eu

Development of a unique laboratory standard: Indium gallium arsenide detector for the 500-1700 nm spectral region

NASA Technical Reports Server (NTRS)

1987-01-01

A planar (5 mm diameter) indium gallium arsenide detector having a high (greater than 50 pct) quantum efficiency from the visible into the infrared spectrum (500 to 1700 nm) was fabricated. Quantum efficiencies as high as 37 pct at 510 nm, 58 pct at 820 nm and 62 pct at 1300 nm and 1550 nm were measured. A planar InP/InGaAs detector structure was also fabricated using vapor phase epitaxy to grow device structures with 0, 0.2, 0.4 and 0.6 micrometer thick InP caps. Quantum efficiency was studied as a function of cap thickness. Conventional detector structures were also used by completely etching off the InP cap after zinc diffusion. Calibrated quantum efficiencies were measured. Best results were obtained with devices whose caps were completely removed by etching. Certain problems still remain with these detectors including non-uniform shunt resistance, reproducibility, contact resistance and narrow band anti-reflection coatings.

Impact of recess etching and surface treatments on ohmic contacts regrown by molecular-beam epitaxy for AlGaN/GaN high electron mobility transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Joglekar, S.; Azize, M.; Palacios, T.

Ohmic contacts fabricated by regrowth of n{sup +} GaN are favorable alternatives to metal-stack-based alloyed contacts in GaN-based high electron mobility transistors. In this paper, the influence of reactive ion dry etching prior to regrowth on the contact resistance in AlGaN/GaN devices is discussed. We demonstrate that the dry etch conditions modify the surface band bending, dangling bond density, and the sidewall depletion width, which influences the contact resistance of regrown contacts. The impact of chemical surface treatments performed prior to regrowth is also investigated. The sensitivity of the contact resistance to the surface treatments is found to depend uponmore » the dangling bond density of the sidewall facets exposed after dry etching. A theoretical model has been developed in order to explain the observed trends.« less

Development of an MRI-compatible digital SiPM detector stack for simultaneous PET/MRI

PubMed Central

Düppenbecker, Peter M; Weissler, Bjoern; Gebhardt, Pierre; Schug, David; Wehner, Jakob; Marsden, Paul K; Schulz, Volkmar

2016-01-01

Abstract Advances in solid-state photon detectors paved the way to combine positron emission tomography (PET) and magnetic resonance imaging (MRI) into highly integrated, truly simultaneous, hybrid imaging systems. Based on the most recent digital SiPM technology, we developed an MRI-compatible PET detector stack, intended as a building block for next generation simultaneous PET/MRI systems. Our detector stack comprises an array of 8 × 8 digital SiPM channels with 4 mm pitch using Philips Digital Photon Counting DPC 3200-22 devices, an FPGA for data acquisition, a supply voltage control system and a cooling infrastructure. This is the first detector design that allows the operation of digital SiPMs simultaneously inside an MRI system. We tested and optimized the MRI-compatibility of our detector stack on a laboratory test bench as well as in combination with a Philips Achieva 3 T MRI system. Our design clearly reduces distortions of the static magnetic field compared to a conventional design. The MRI static magnetic field causes weak and directional drift effects on voltage regulators, but has no direct impact on detector performance. MRI gradient switching initially degraded energy and timing resolution. Both distortions could be ascribed to voltage variations induced on the bias and the FPGA core voltage supply respectively. Based on these findings, we improved our detector design and our final design shows virtually no energy or timing degradations, even during heavy and continuous MRI gradient switching. In particular, we found no evidence that the performance of the DPC 3200-22 digital SiPM itself is degraded by the MRI system. PMID:28458919

Empirical assessment of the detection efficiency of CR-39 at high proton fluence and a compact, proton detector for high-fluence applications

DOE PAGES

Rosenberg, M. J.; Séguin, F. H.; Waugh, C. J.; ...

2014-04-14

CR-39 solid-state nuclear track detectors are widely used in physics and in many inertial confinement fusion (ICF) experiments, and under ideal conditions these detectors have 100% detection efficiency for ~0.5–8 MeV protons. When the fluence of incident particles becomes too high, the overlap of particle tracks leads to under-counting at typical processing conditions (5h etch in 6N NaOH at 80°C). Short etch times required to avoid overlap can cause under-counting as well, as tracks are not fully developed. Experiments have determined the minimum etch times for 100% detection of 1.7–4.3-MeV protons and established that for 2.4-MeV protons, relevant for detectionmore » of DD protons, the maximum fluence that can be detected using normal processing techniques is ≲3 ×10 6 cm -2. A CR-39-based proton detector has been developed to mitigate issues related to high particle fluences on ICF facilities. Using a pinhole and scattering foil several mm in front of the CR-39, proton fluences at the CR-39 are reduced by more than a factor of ~50, increasing the operating yield upper limit by a comparable amount.« less

Fabrication of large dual-polarized multichroic TES bolometer arrays for CMB measurements with the SPT-3G camera

DOE Office of Scientific and Technical Information (OSTI.GOV)

Posada, C. M.; Ade, P. A. R.; Ahmed, Z.

2015-08-11

This work presents the procedures used by Argonne National Laboratory to fabricate large arrays of multichroic transition-edge sensor (TES) bolometers for cosmic microwave background (CMB) measurements. These detectors will be assembled into the focal plane for the SPT-3G camera, the third generation CMB camera to be installed in the South Pole Telescope. The complete SPT-3G camera will have approximately 2690 pixels, for a total of 16,140 TES bolometric detectors. Each pixel is comprised of a broad-band sinuous antenna coupled to a Nb microstrip line. In-line filters are used to define the different band-passes before the millimeter-wavelength signal is fed tomore » the respective Ti/Au TES bolometers. There are six TES bolometer detectors per pixel, which allow for measurements of three band-passes (95 GHz, 150 GHz and 220 GHz) and two polarizations. The steps involved in the monolithic fabrication of these detector arrays are presented here in detail. Patterns are defined using a combination of stepper and contact lithography. The misalignment between layers is kept below 200 nm. The overall fabrication involves a total of 16 processes, including reactive and magnetron sputtering, reactive ion etching, inductively coupled plasma etching and chemical etching.« less

Light scattering apparatus and method for determining radiation exposure to plastic detectors

DOEpatents

Hermes, Robert E.

2002-01-01

An improved system and method of analyzing cumulative radiation exposure registered as pits on track etch foils of radiation dosimeters. The light scattering apparatus and method of the present invention increases the speed of analysis while it also provides the ability to analyze exposure levels beyond that which may be properly measured with conventional techniques. Dosimeters often contain small plastic sheets that register accumulated damage when exposed to a radiation source. When the plastic sheet from the dosimeter is chemically etched, a track etch foil is produced wherein pits or holes are created in the plastic. The number of these pits, or holes, per unit of area (pit density) correspond to the amount of cumulative radiation exposure which is being optically measured by the apparatus. To measure the cumulative radiation exposure of a track etch foil a high intensity collimated beam is passed through foil such that the pits and holes within the track etch foil cause a portion of the impinging light beam to become scattered upon exit. The scattered light is focused with a lens, while the primary collimated light beam (unscattered light) is blocked. The scattered light is focused by the lens onto an optical detector capable of registering the optical power of the scattered light which corresponds to the cumulative radiation to which the track etch foil has been exposed.

Mid- and Long-IR Broadband Quantum Well Photodetector

NASA Technical Reports Server (NTRS)

Soibel, Alexander; Ting, David Z.; Khoshakhlagh, Arezou; Gunapala, Sarath D.

2012-01-01

A single-stack broadband quantum well infrared photodetector (QWIP) has been developed that consists of stacked layers of GaAs/AlGaAs quantum wells with absorption peaks centered at various wavelengths spanning across the 9- to-11- m spectral regions. The correct design of broadband QWIPs was a critical step in this task because the earlier implementation of broadband QWIPs suffered from a tuning of spectral response curve with an applied bias. Here, a new QWIP design has been developed to overcome the spectral tuning with voltage that results from non-uniformity and bias variation of the electrical field across the detector stacks with different absorption wavelengths. In this design, a special effort has been made to avoid non-uniformity and bias tuning by changing the doping levels in detector stacks to compensate for variation of dark current generation rate across the stacks with different absorption wavelengths. Single-pixel photodetectors were grown, fabricated, and tested using this new design. The measured dark current is comparable with the dark measured current for single-color QWIP detectors with similar cutoff wavelength, thus indicating high material quality as well as absence of performance degradation resulting from broadband design. The measured spectra clearly demonstrate that the developed detectors cover the desired special range of 8 to 12 m. Moreover, the shape of the spectral curves does not change with applied biases, thus overcoming the problem plaguing previous designs of broadband QWIPs.

Four passive sampling elements (quatrefoil)--II. Film badges for monitoring radon and its progeny.

PubMed

Tommasino, L; Tokonami, S

2011-05-01

The four passive samplers (quatrefoil) already described in a parallel paper, make it possible to obtain thin radiation sources, useful for alpha and beta counting by any passive and real-time detector. In the present paper, the applications of this quatrefoil for measuring radon gas by etch-track detectors will be described. In the case of radon measurements, different solids have been identified, with radon-sorption partition coefficients related to air from 1 to 2000. Uniquely compact radon badges can be obtained by using a layer of these solids facing an alpha track-etch detector. These radon badges make it possible to overcome most of the shortcomings of existing passive monitors. Moreover, these badges show promise for studying the radon solubility of polymer films.

Visible-blind ultraviolet photodetectors on porous silicon carbide substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Naderi, N.; Hashim, M.R., E-mail: roslan@usm.my

2013-06-01

Highlights: • Highly reliable UV detectors are fabricated on porous silicon carbide substrates. • The optical properties of samples are enhanced by increasing the current density. • The optimized sample exhibits enhanced sensitivity to the incident UV radiation. - Abstract: Highly reliable visible-blind ultraviolet (UV) photodetectors were successfully fabricated on porous silicon carbide (PSC) substrates. High responsivity and high photoconductive gain were observed in a metal–semiconductor–metal ultraviolet photodetector that was fabricated on an optimized PSC substrate. The PSC samples were prepared via the UV-assisted photo-electrochemical etching of an n-type hexagonal silicon carbide (6H-SiC) substrate using different etching current densities. Themore » optical results showed that the current density is an outstanding etching parameter that controls the porosity and uniformity of PSC substrates. A highly porous substrate was synthesized using a suitable etching current density to enhance its light absorption, thereby improving the sensitivity of UV detector with this substrate. The electrical characteristics of fabricated devices on optimized PSC substrates exhibited enhanced sensitivity and responsivity to the incident radiation.« less

Optimization of a LSO-Based Detector Module for Time-of-Flight PET

NASA Astrophysics Data System (ADS)

Moses, W. W.; Janecek, M.; Spurrier, M. A.; Szupryczynski, P.; Choong, W.-S.; Melcher, C. L.; Andreaco, M.

2010-06-01

We have explored methods for optimizing the timing resolution of an LSO-based detector module for a single-ring, “demonstration” time-of-flight PET camera. By maximizing the area that couples the scintillator to the PMT and minimizing the average path length that the scintillation photons travel, a single detector timing resolution of 218 ps fwhm is measured, which is considerably better than the 385 ps fwhm obtained by commercial LSO or LYSO TOF detector modules. We explored different surface treatments (saw-cut, mechanically polished, and chemically etched) and reflector materials (Teflon tape, ESR, Lumirror, Melinex, white epoxy, and white paint), and found that for our geometry, a chemically etched surface had 5% better timing resolution than the saw-cut or mechanically polished surfaces, and while there was little dependence on the timing resolution between the various reflectors, white paint and white epoxy were a few percent better. Adding co-dopants to LSO shortened the decay time from 40 ns to 30 ns but maintained the same or higher total light output. This increased the initial photoelectron rate and so improved the timing resolution by 15%. Using photomultiplier tubes with higher quantum efficiency (blue sensitivity index of 13.5 rather than 12) improved the timing resolution by an additional 5%. By choosing the optimum surface treatment (chemically etched), reflector (white paint), LSO composition (co-doped), and PMT (13.5 blue sensitivity index), the coincidence timing resolution of our detector module was reduced from 309 ps to 220 ps fwhm.

Type-II domains in ferroelectric gadolinium molybdate (in German)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bohm, J.; Kuersten, H.D.

Etching (001)-faces of gadolinium molybdate (GMO) reveals new kinds of domains. They are created by a translation, that leaves the spontaneous polarization and the transition parameter invariant. The translation vector is a part of a lattice vector, similar to stacking faults. (auth)

Multiresonant layered plasmonic films

DOE Office of Scientific and Technical Information (OSTI.GOV)

DeVetter, Brent M.; Bernacki, Bruce E.; Bennett, Wendy D.

Multi-resonant nanoplasmonic films have numerous applications in areas such as nonlinear optics, sensing, and tamper indication. While techniques such as focused ion beam milling and electron beam lithography can produce high-quality multi-resonant films, these techniques are expensive, serial processes that are difficult to scale at the manufacturing level. Here, we present the fabrication of multi-resonant nanoplasmonic films using a layered stacking technique. Periodically-spaced gold nanocup substrates were fabricated using self-assembled polystyrene nanospheres followed by oxygen plasma etching and metal deposition via magnetron sputter coating. By adjusting etch parameters and initial nanosphere size, it was possible to achieve an optical responsemore » ranging from the visible to the near-infrared. Singly resonant, flexible films were first made by performing peel-off using an adhesive-coated polyolefin film. Through stacking layers of the nanofilm, we demonstrate fabrication of multi-resonant films at a fraction of the cost and effort as compared to top-down lithographic techniques.« less

Theoretical and Monte Carlo optimization of a stacked three-layer flat-panel x-ray imager for applications in multi-spectral diagnostic medical imaging

NASA Astrophysics Data System (ADS)

Lopez Maurino, Sebastian; Badano, Aldo; Cunningham, Ian A.; Karim, Karim S.

2016-03-01

We propose a new design of a stacked three-layer flat-panel x-ray detector for dual-energy (DE) imaging. Each layer consists of its own scintillator of individual thickness and an underlying thin-film-transistor-based flat-panel. Three images are obtained simultaneously in the detector during the same x-ray exposure, thereby eliminating any motion artifacts. The detector operation is two-fold: a conventional radiography image can be obtained by combining all three layers' images, while a DE subtraction image can be obtained from the front and back layers' images, where the middle layer acts as a mid-filter that helps achieve spectral separation. We proceed to optimize the detector parameters for two sample imaging tasks that could particularly benefit from this new detector by obtaining the best possible signal to noise ratio per root entrance exposure using well-established theoretical models adapted to fit our new design. These results are compared to a conventional DE temporal subtraction detector and a single-shot DE subtraction detector with a copper mid-filter, both of which underwent the same theoretical optimization. The findings are then validated using advanced Monte Carlo simulations for all optimized detector setups. Given the performance expected from initial results and the recent decrease in price for digital x-ray detectors, the simplicity of the three-layer stacked imager approach appears promising to usher in a new generation of multi-spectral digital x-ray diagnostics.

Performance of InGaAs short wave infrared avalanche photodetector for low flux imaging

NASA Astrophysics Data System (ADS)

Singh, Anand; Pal, Ravinder

2017-11-01

Opto-electronic performance of the InGaAs/i-InGaAs/InP short wavelength infrared focal plane array suitable for high resolution imaging under low flux conditions and ranging is presented. More than 85% quantum efficiency is achieved in the optimized detector structure. Isotropic nature of the wet etching process poses a challenge in maintaining the required control in the small pitch high density detector array. Etching process is developed to achieve low dark current density of 1 nA/cm2 in the detector array with 25 µm pitch at 298 K. Noise equivalent photon performance less than one is achievable showing single photon detection capability. The reported photodiode with low photon flux is suitable for active cum passive imaging, optical information processing and quantum computing applications.

High resolution track etch autoradiography

DOEpatents

Solares, G.; Zamenhof, R.G.

1994-12-27

A detector assembly is disclosed for use in obtaining alpha-track autoradiographs, the detector assembly including a substantially boron-free substrate; a detector layer deposited on the substantially boron-free substrate, the detector layer being capable of recording alpha particle tracks and exhibiting evidence of the alpha tracks in response to being exposed to an etchant, the detector layer being less than about 2 microns thick; and a protective layer deposited on the detector layer, the protective layer being resistant to the etchant and having a thickness of about 0.5 to 1 microns. 13 figures.

High resolution track etch autoradiography

DOEpatents

Solares, Guido; Zamenhof, Robert G.

1994-01-01

A detector assembly for use in obtaining alpha-track autoradiographs, the detector assembly including a substantially boron-free substrate; a detector layer deposited on the substantially boron-free substrate, the detector layer being capable of recording alpha particle tracks and exhibiting evidence of the alpha tracks in response to being exposed to an etchant, the detector layer being less than about 2 microns thick; and a protective layer deposited on the detector layer, the protective layer being resistant to the etchant and having a thickness of about 0.5 to 1 microns.

Image processing analysis of nuclear track parameters for CR-39 detector irradiated by thermal neutron

DOE Office of Scientific and Technical Information (OSTI.GOV)

Al-Jobouri, Hussain A., E-mail: hahmed54@gmail.com; Rajab, Mustafa Y., E-mail: mostafaheete@gmail.com

CR-39 detector which covered with boric acid (H{sub 3}Bo{sub 3}) pellet was irradiated by thermal neutrons from ({sup 241}Am - {sup 9}Be) source with activity 12Ci and neutron flux 10{sup 5} n. cm{sup −2}. s{sup −1}. The irradiation times -T{sub D} for detector were 4h, 8h, 16h and 24h. Chemical etching solution for detector was sodium hydroxide NaOH, 6.25N with 45 min etching time and 60 C° temperature. Images of CR-39 detector after chemical etching were taken from digital camera which connected from optical microscope. MATLAB software version 7.0 was used to image processing. The outputs of image processing of MATLABmore » software were analyzed and found the following relationships: (a) The irradiation time -T{sub D} has behavior linear relationships with following nuclear track parameters: i) total track number - N{sub T} ii) maximum track number - MRD (relative to track diameter - D{sub T}) at response region range 2.5 µm to 4 µm iii) maximum track number - M{sub D} (without depending on track diameter - D{sub T}). (b) The irradiation time -T{sub D} has behavior logarithmic relationship with maximum track number - M{sub A} (without depending on track area - A{sub T}). The image processing technique principally track diameter - D{sub T} can be take into account to classification of α-particle emitters, In addition to the contribution of these technique in preparation of nano- filters and nano-membrane in nanotechnology fields.« less

Overlay degradation induced by film stress

NASA Astrophysics Data System (ADS)

Huang, Chi-hao; Liu, Yu-Lin; Luo, Shing-Ann; Yang, Mars; Yang, Elvis; Hung, Yung-Tai; Luoh, Tuung; Yang, T. H.; Chen, K. C.

2017-03-01

The semiconductor industry has continually sought the approaches to produce memory devices with increased memory cells per memory die. One way to meet the increasing storage capacity demand and reduce bit cost of NAND flash memories is 3D stacked flash cell array. In constructing 3D NAND flash memories, increasing the number of stacked layers to build more memory cell number per unit area necessitates many high-aspect-ratio etching processes accordingly the incorporation of thick and unique etching hard-mask scheme has been indispensable. However, the ever increasingly thick requirement on etching hard-mask has made the hard-mask film stress control extremely important for maintaining good process qualities. The residual film stress alters the wafer shape consequently several process impacts have been readily observed across wafer, such as wafer chucking error on scanner, film peeling, materials coating and baking defects, critical dimension (CD) non-uniformity and overlay degradation. This work investigates the overlay and residual order performance indicator (ROPI) degradation coupling with increasingly thick advanced patterning film (APF) etching hard-mask. Various APF films deposited by plasma enhanced chemical vapor deposition (PECVD) method under different deposition temperatures, chemicals combinations, radio frequency powers and chamber pressures were carried out. And -342MPa to +80MPa film stress with different film thicknesses were generated for the overlay performance study. The results revealed the overlay degradation doesn't directly correlate with convex or concave wafer shapes but the magnitude of residual APF film stress, while increasing the APF thickness will worsen the overlay performance and ROPI strongly. High-stress APF film was also observed to enhance the scanner chucking difference and lead to more serious wafer to wafer overlay variation. To reduce the overlay degradation from ever increasingly thick APF etching hard-mask, optimizing the film stress of APF is the most effective way and high order overlay compensation is also helpful.

LWIR HgCdTe Detectors Grown on Ge Substrates

NASA Astrophysics Data System (ADS)

Vilela, M. F.; Lofgreen, D. D.; Smith, E. P. G.; Newton, M. D.; Venzor, G. M.; Peterson, J. M.; Franklin, J. J.; Reddy, M.; Thai, Y.; Patten, E. A.; Johnson, S. M.; Tidrow, M. Z.

2008-09-01

Long-wavelength infrared (LWIR) HgCdTe p-on- n double-layer heterojunctions (DLHJs) for infrared detector applications have been grown on 100 mm Ge (112) substrates by molecular beam epitaxy (MBE). The objective of this current work was to grow our baseline p-on- n DLHJ detector structure (used earlier on Si substrates) on 100 mm Ge substrates in the 10 μm to 11 μm LWIR spectral region, evaluate the material properties, and obtain some preliminary detector performance data. Material characterization techniques included are X-ray rocking curves, etch pit density (EPD) measurements, compositional uniformity determined from Fourier-transform infrared (FTIR) transmission, and doping concentrations determined from secondary-ion mass spectroscopy (SIMS). Detector properties include resistance-area product (RoA), spectral response, and quantum efficiency. Results of LWIR HgCdTe detectors and test structure arrays (TSA) fabricated on both Ge and silicon (Si) substrates are presented and compared. Material properties demonstrated include X-ray full-width of half-maximum (FWHM) as low as 77 arcsec, typical etch pit densities in mid 106 cm-2 and wavelength cutoff maximum/minimum variation <2% across the full wafer. Detector characteristics were found to be nearly identical for HgCdTe grown on either Ge or Si substrates.

Layer Number and Stacking Order Imaging of Few-layer Graphenes by Transmission Electron Microscopy

NASA Astrophysics Data System (ADS)

Ping, Jinglei; Fuhrer, Michael

2012-02-01

A method using transmission electron microscopy (TEM) selected area electron diffraction (SAED) patterns and dark field (DF) images is developed to identify graphene layer number and stacking order by comparing intensity ratios of SAED spots with theory. Graphene samples are synthesized by ambient pressure chemical vapor depostion and then etched by hydrogen in high temperature to produce samples with crystalline stacking but varying layer number on the nanometer scale. Combined DF images from first- and second-order diffraction spots are used to produce images with layer-number and stacking-order contrast with few-nanometer resolution. This method is proved to be accurate enough for quantative stacking-order-identification of graphenes up to at least four layers. This work was partially supported by Science of Precision Multifunctional Nanostructures for Elecrical Energy Storage, an Energy Frontier Research Center funded by the U.S. DOE, Office of Science, Office of Basic Energy Sciences under Award Number DESC0001160.

A junction-level optoelectronic characterization of etching-induced damage for third-generation HgCdTe infrared focal-plane array photodetectors

NASA Astrophysics Data System (ADS)

Wang, Peng; Wang, Yueming; Wu, Mingzai; Ye, Zhenhua

2018-06-01

Third-generation HgCdTe-based infrared focal plane arrays require high aspect ratio trenches with admissible etch induced damage at the surface and sidewalls for effectively isolating the pixels. In this paper, the high-density inductively coupled plasma enhanced reaction ion etching technique has been used for micro-mesa delineation of HgCdTe for third-generation infrared focal-plane array detectors. A nondestructive junction-level optoelectronic characterization method called laser beam induced current (LBIC) is used to evaluate the lateral junction extent of HgCdTe etch-induced damage scanning electron microscopy. It is found that the LBIC profiles exhibit evident double peaks and valleys phenomena. The lateral extent of etch induced mesa damage of ∼2.4 μm is obtained by comparing the LBIC profile and the scanning electron microscopy image of etched sample. This finding will guide us to nondestructively identify the distributions of the etching damages in large scale HgCdTe micro-mesa.

High-Si content BARC for dual-BARC systems such as trilayer patterning

NASA Astrophysics Data System (ADS)

Kennedy, Joseph; Xie, Song-Yuan; Wu, Ze-Yu; Katsanes, Ron; Flanigan, Kyle; Lee, Kevin; Slezak, Mark; Liu, Zhi; Lin, Shang-Ho

2009-03-01

This work discusses the requirements and performance of Honeywell's middle layer material, UVAS, for tri-layer patterning. UVAS is a high Si content polymer synthesized directly from Si containing starting monomer components. The monomers are selected to produce a film that meets the requirements as a middle layer for tri-layer patterning (TLP) and gives us a level of flexibility to adjust the properties of the film to meet the customer's specific photoresist and patterning requirements. Results of simulations of the substrate reflectance versus numerical aperture, UVAS thickness, and under layer film are presented. ArF photoresist line profiles and process latitude versus UVAS bake at temperatures as low as 150ºC are presented and discussed. Immersion lithographic patterning of ArF photoresist line space and contact hole features will be presented. A sequence of SEM images detailing the plasma etch transfer of line space photoresist features through the middle and under layer films comprising the TLP film stack will be presented. Excellent etch selectivity between the UVAS and the organic under layer film exists as no edge erosion or faceting is observed as a result of the etch process. A detailed study of the impact of a PGMEA solvent photoresist rework process on the lithographic process window of a TLP film stack was performed with the results indicating that no degradation to the UVAS film occurs.

Control of the sidewall angle of an absorber stack using the Faraday cage system for the change of pattern printability in EUVL

NASA Astrophysics Data System (ADS)

Jang, Il-Yong; Huh, Sung-Min; Moon, Seong-Yong; Woo, Sang-Gyun; Lee, Jin-Kwan; Moon, Sang Heup; Cho, HanKu

2008-10-01

A patterned TaN substrate, which is candidate for a mask absorber in extreme ultra-violet lithography (EUVL), was etched to have inclined sidewalls by using a Faraday cage system under the condition of a 2-step process that allowed the high etch selectivity of TaN over the resist. The sidewall angle (SWA) of the patterned substrate, which was in the shape of a parallelogram after etching, could be controlled by changing the slope of a substrate holder that was placed in the Faraday cage. The performance of an EUV mask, which contained the TaN absorber of an oblique pattern over the molybdenum/silicon multi-layer, was simulated for different cases of SWA. The results indicated that the optical properties, such as the critical dimension (CD), an offset in the CD bias between horizontal and vertical patterns (H-V bias), and a shift in the image position on the wafer, could be controlled by changing the SWA of the absorber stack. The simulation result showed that the effect of the SWA on the optical properties became more significant at larger thicknesses of the absorber and smaller sizes of the target CD. Nevertheless, the contrast of the aerial images was not significantly decreased because the shadow effect caused by either sidewall of the patterned substrate cancelled with each other.

Response of CR-39 to 0.9-2.5 MeV protons for KOH and NaOH etching solutions

NASA Astrophysics Data System (ADS)

Bahrami, F.; Mianji, F.; Faghihi, R.; Taheri, M.; Ansarinejad, A.

2016-03-01

In some circumstances passive detecting methods are the only or preferable measuring approaches. For instance, defining particles' energy profile inside the objects being irradiated with heavy ions and measuring fluence of neutrons or heavy particles in space missions are the cases covered by these methods. In this paper the ability of polyallyl diglycol carbonate (PADC) track detector (commercially known as CR-39) for passive spectrometry of proton particles is studied. Furthermore, the effect of KOH and NaOH as commonly used chemical etching solutions on the response of the detector is investigated. The experiments were carried out with protons in the energy range of 0.94-2.5 MeV generated by a Van de Graaff accelerator. Then, the exposed track dosimeters were etched in the two aforementioned etchants through similar procedure with the same normality of 6.25 N and the same temperature of 85 °C. Formation of the tracks was precisely investigated and the track diameters were recorded following every etching step for each solution using a multistage etching process. The results showed that the proposed method can be efficiently used for the spectrometry of protons over a wider dynamic range and with a reasonable accuracy. Moreover, NaOH and KOH outperformed each other over different regions of the proton energy range. The detection efficiency of both etchants was approximately 100%.

Ultimate intra-wafer critical dimension uniformity control by using lithography and etch tool corrections

NASA Astrophysics Data System (ADS)

Kubis, Michael; Wise, Rich; Reijnen, Liesbeth; Viatkina, Katja; Jaenen, Patrick; Luca, Melisa; Mernier, Guillaume; Chahine, Charlotte; Hellin, David; Kam, Benjamin; Sobieski, Daniel; Vertommen, Johan; Mulkens, Jan; Dusa, Mircea; Dixit, Girish; Shamma, Nader; Leray, Philippe

2016-03-01

With shrinking design rules, the overall patterning requirements are getting aggressively tighter. For the 7-nm node and below, allowable CD uniformity variations are entering the Angstrom region (ref [1]). Optimizing inter- and intra-field CD uniformity of the final pattern requires a holistic tuning of all process steps. In previous work, CD control with either litho cluster or etch tool corrections has been discussed. Today, we present a holistic CD control approach, combining the correction capability of the etch tool with the correction capability of the exposure tool. The study is done on 10-nm logic node wafers, processed with a test vehicle stack patterning sequence. We include wafer-to-wafer and lot-to-lot variation and apply optical scatterometry to characterize the fingerprints. Making use of all available correction capabilities (lithography and etch), we investigated single application of exposure tool corrections and of etch tool corrections as well as combinations of both to reach the lowest CD uniformity. Results of the final pattern uniformity based on single and combined corrections are shown. We conclude on the application of this holistic lithography and etch optimization to 7nm High-Volume manufacturing, paving the way to ultimate within-wafer CD uniformity control.

A novel fast-neutron detector concept for energy-selective imaging and imaging spectroscopy.

PubMed

Cortesi, M; Dangendorf, V; Zboray, R; Prasser, H-M

2014-07-01

We present and discuss the operational principle of a new fast-neutron detector concept suitable for either energy-selective imaging or for imaging spectroscopy. The detector is comprised of a series of energy-selective stacks of converter foils immersed in a noble-gas based mixture, coupled to a position-sensitive charge readout. Each foil in the various stacks is made of two layers of different thicknesses, fastened together: a hydrogen-rich (plastic) layer for neutron-to-proton conversion, and a hydrogen-free coating to selectively stop/absorb the recoil protons below a certain energy cut-off. The neutron-induced recoil protons, that escape the converter foils, release ionization electrons in the gas gaps between consecutive foils. The electrons are then drifted towards and localized by a position-sensitive charge amplification and readout stage. Comparison of the images detected by stacks with different energy cut-offs allows energy-selective imaging. Neutron energy spectrometry is realized by analyzing the responses of a sufficient large number of stacks of different energy response and unfolding techniques. In this paper, we present the results of computer simulation studies and discuss the expected performance of the new detector concept. Potential applications in various fields are also briefly discussed, in particularly, the application of energy-selective fast-neutron imaging for nuclear safeguards application, with the aim of determining the plutonium content in Mixed Oxide (MOX) fuels.

Angular resolution of stacked resistive plate chambers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Samuel, Deepak; Onikeri, Pratibha B.; Murgod, Lakshmi P., E-mail: deepaksamuel@cuk.ac.in, E-mail: pratibhaonikeri@gmail.com, E-mail: lakshmipmurgod@gmail.com

We present here detailed derivations of mathematical expressions for the accuracy in the arrival direction of particles estimated using a set of stacked resistive plate chambers (RPCs). The expressions are validated against experimental results using data collected from the prototype detectors (without magnet) of the upcoming India-based Neutrino Observatory (INO). We also present a theoretical estimate of angular resolution of such a setup. In principle, these expressions can be used for any other detector with an architecture similar to that of RPCs.

Enabling Large Focal Plane Arrays Through Mosaic Hybridization

NASA Technical Reports Server (NTRS)

Miller, TImothy M.; Jhabvala, Christine A.; Leong, Edward; Costen, Nicholas P.; Sharp, Elmer; Adachi, Tomoko; Benford, Dominic

2012-01-01

We have demonstrated advances in mosaic hybridization that will enable very large format far-infrared detectors. Specifically we have produced electrical detector models via mosaic hybridization yielding superconducting circuit paths by hybridizing separately fabricated sub-units onto a single detector unit. The detector model was made on a 100mm diameter wafer while four model readout quadrant chips were made from a separate 100mm wafer. The individually fabricated parts were hybridized using a flip-chip bonder to assemble the detector-readout stack. Once all of the hybridized readouts were in place, a single, large and thick silicon substrate was placed on the stack and attached with permanent epoxy to provide strength and a Coefficient of Thermal Expansion match to the silicon components underneath. Wirebond pads on the readout chips connect circuits to warm readout electronics; and were used to validate the successful superconducting electrical interconnection of the model mosaic-hybrid detector. This demonstration is directly scalable to 150 mm diameter wafers, enabling pixel areas over ten times the area currently available.

Fabricating interlocking support walls, with an adjustable backshort, in a TES bolometer array for far-infrared astronomy

NASA Astrophysics Data System (ADS)

Miller, Timothy M.; Abrahams, John H.; Allen, Christine A.

2006-04-01

We report a fabrication process for deep etching silicon to different depths with a single masking layer, using standard masking and exposure techniques. Using this technique, we have incorporated a deep notch in the support walls of a transition-edge-sensor (TES) bolometer array during the detector back-etch, while simultaneously creating a cavity behind the detector. The notches serve to receive the support beams of a separate component, the Backshort-Under-Grid (BUG), an array of adjustable height quarter-wave backshorts that fill the cavities behind each pixel in the detector array. The backshort spacing, set prior to securing to the detector array, can be controlled from 25 to 300 μm by adjusting only a few process steps. In addition to backshort spacing, the interlocking beams and notches provide positioning and structural support for the ˜1 mm pitch, 8×8 array. This process is being incorporated into developing a TES bolometer array with an adjustable backshort for use in far-infrared astronomy. The masking technique and machining process used to fabricate the interlocking walls will be discussed.

Self-Anchored Catalyst Interface Enables Ordered Via Array Formation from Submicrometer to Millimeter Scale for Polycrystalline and Single-Crystalline Silicon.

PubMed

Kim, Jeong Dong; Kim, Munho; Kong, Lingyu; Mohseni, Parsian K; Ranganathan, Srikanth; Pachamuthu, Jayavel; Chim, Wai Kin; Chiam, Sing Yang; Coleman, James J; Li, Xiuling

2018-03-14

Defying text definitions of wet etching, metal-assisted chemical etching (MacEtch), a solution-based, damage-free semiconductor etching method, is directional, where the metal catalyst film sinks with the semiconductor etching front, producing 3D semiconductor structures that are complementary to the metal catalyst film pattern. The same recipe that works perfectly to produce ordered array of nanostructures for single-crystalline Si (c-Si) fails completely when applied to polycrystalline Si (poly-Si) with the same doping type and level. Another long-standing challenge for MacEtch is the difficulty of uniformly etching across feature sizes larger than a few micrometers because of the nature of lateral etching. The issue of interface control between the catalyst and the semiconductor in both lateral and vertical directions over time and over distance needs to be systematically addressed. Here, we present a self-anchored catalyst (SAC) MacEtch method, where a nanoporous catalyst film is used to produce nanowires through the pinholes, which in turn physically anchor the catalyst film from detouring as it descends. The systematic vertical etch rate study as a function of porous catalyst diameter from 200 to 900 nm shows that the SAC-MacEtch not only confines the etching direction but also enhances the etch rate due to the increased liquid access path, significantly delaying the onset of the mass-transport-limited critical diameter compared to nonporous catalyst c-Si counterpart. With this enhanced mass transport approach, vias on multistacks of poly-Si/SiO 2 are also formed with excellent vertical registry through the polystack, even though they are separated by SiO 2 which is readily removed by HF alone with no anisotropy. In addition, 320 μm square through-Si-via (TSV) arrays in 550 μm thick c-Si are realized. The ability of SAC-MacEtch to etch through poly/oxide/poly stack as well as more than half millimeter thick silicon with excellent site specificity for a wide range of feature sizes has significant implications for 2.5D/3D photonic and electronic device applications.

Fabrication of nano-gap electrode arrays by the construction and selective chemical etching of nano-crosswire stacks

NASA Technical Reports Server (NTRS)

Prokopuk, Nicholas (Inventor); Son, Kyung-Ah (Inventor)

2008-01-01

Methods of fabricating nano-gap electrode structures in array configurations, and the structures so produced. The fabrication method involves depositing first and second pluralities of electrodes comprising nanowires using processes such as lithography, deposition of metals, lift-off processes, and chemical etching that can be performed using conventional processing tools applicable to electronic materials processing. The gap spacing in the nano-gap electrode array is defined by the thickness of a sacrificial spacer layer that is deposited between the first and second pluralities of electrodes. The sacrificial spacer layer is removed by etching, thereby leaving a structure in which the distance between pairs of electrodes is substantially equal to the thickness of the sacrificial spacer layer. Electrode arrays with gaps measured in units of nanometers are produced. In one embodiment, the first and second pluralities of electrodes are aligned in mutually orthogonal orientations.

Removal and deposition efficiencies of the long-lived 222Rn daughters during etching of germanium surfaces

NASA Astrophysics Data System (ADS)

Zuzel, G.; Wójcik, M.; Majorovits, B.; Lampert, M. O.; Wendling, P.

2012-06-01

Removal and deposition efficiencies of the long-lived 222Rn daughters during etching from and onto surfaces of standard and high purity germanium were investigated. The standard etching procedure of Canberra-France used during production of high purity n-type germanium diodes was applied to germanium discs, which have been exposed earlier to a strong radon source for deposition of its progenies. An uncontaminated sample was etched in a solution containing 210Pb, 210Bi and 210Po. All isotopes were measured before and after etching with appropriate detectors. In contrast to copper and stainless steel, they were removed from germanium very efficiently. However, the reverse process was also observed. Considerable amounts of radioactive lead, bismuth and polonium isotopes present initially in the artificially polluted etchant were transferred to the clean high purity surface during processing of the sample.

On particle track detectors

NASA Technical Reports Server (NTRS)

Benton, E. V.; Gruhn, T. A.; Andrus, C. H.

1973-01-01

Aqueous sodium hydroxide is widely used to develop charged particle tracks in polycarbonate film, particularly Lexan. The chemical nature of the etching process for this system has been determined. A method employing ultra-violet absorbance was developed for monitoring the concentration of the etch products in solution. Using this method it was possible to study the formation of the etching solution saturated in etch products. It was found that the system super-saturates to a significant extent before precipitation occurs. It was also learned that the system approaches its equilibrium state rather slowly. It is felt that both these phenomena may be due to the presence of surfactant in the solution. In light of these findings, suggestions are given regarding the preparation and maintenance of the saturated etch solution. Two additional research projects, involving automated techniques for particle track analysis and particle identification using AgCl crystals, are briefly summarized.

Inductively Coupled Plasma-Induced Electrical Damage on HgCdTe Etched Surface at Cryogenic Temperatures

NASA Astrophysics Data System (ADS)

Liu, L. F.; Chen, Y. Y.; Ye, Z. H.; Hu, X. N.; Ding, R. J.; He, L.

2018-03-01

Plasma etching is a powerful technique for transferring high-resolution lithographic patterns into HgCdTe material with low etch-induced damage, and it is important for fabricating small-pixel-size HgCdTe infrared focal plane array (IRFPA) detectors. P- to n-type conversion is known to occur during plasma etching of vacancy-doped HgCdTe; however, it is usually unwanted and its removal requires extra steps. Etching at cryogenic temperatures can reduce the etch-induced type conversion depth in HgCdTe via the electrical damage mechanism. Laser beam-induced current (LBIC) is a nondestructive photoelectric characterization technique which can provide information regarding the vertical and lateral electrical field distribution, such as defects and p-n junctions. In this work, inductively coupled plasma (ICP) etching of HgCdTe was implemented at cryogenic temperatures. For an Ar/CH4 (30:1 in SCCM) plasma with ICP input power of 1000 W and RF-coupled DC bias of ˜ 25 V, a HgCdTe sample was dry-etched at 123 K for 5 min using ICP. The sample was then processed to remove a thin layer of the plasma-etched region while maintaining a ladder-like damaged layer by continuously controlling the wet chemical etching time. Combining the ladder etching method and LBIC measurement, the ICP etching-induced electrical damage depth was measured and estimated to be about 20 nm. The results indicate that ICP etching at cryogenic temperatures can significantly suppress plasma etching-induced electrical damage, which is beneficial for defining HgCdTe mesa arrays.

Suppression of Lateral Diffusion and Surface Leakage Currents in nBn Photodetectors Using an Inverted Design

NASA Astrophysics Data System (ADS)

Du, X.; Savich, G. R.; Marozas, B. T.; Wicks, G. W.

2018-02-01

Surface leakage and lateral diffusion currents in InAs-based nBn photodetectors have been investigated. Devices fabricated using a shallow etch processing scheme that etches through the top contact and stops at the barrier exhibited large lateral diffusion current but undetectably low surface leakage. Such large lateral diffusion current significantly increased the dark current, especially in small devices, and causes pixel-to-pixel crosstalk in detector arrays. To eliminate the lateral diffusion current, two different approaches were examined. The conventional solution utilized a deep etch process, which etches through the top contact, barrier, and absorber. This deep etch processing scheme eliminated lateral diffusion, but introduced high surface current along the device mesa sidewalls, increasing the dark current. High device failure rate was also observed in deep-etched nBn structures. An alternative approach to limit lateral diffusion used an inverted nBn structure that has its absorber grown above the barrier. Like the shallow etch process on conventional nBn structures, the inverted nBn devices were fabricated with a processing scheme that only etches the top layer (the absorber, in this case) but avoids etching through the barrier. The results show that inverted nBn devices have the advantage of eliminating the lateral diffusion current without introducing elevated surface current.

Experimental investigations of stability of static liquid fillets and liquid-gas interface in capillary passages for gas-free liquid acquisition in zero gravity

NASA Astrophysics Data System (ADS)

Purohit, Ghanshyam Purshottamdas

Experimental investigations of static liquid fillets formed between small gaps of a cylindrical surface and a flat surface are carried out. The minimum volume of liquid required to form a stable fillet and the maximum liquid content the fillet can hold before becoming unstable are studied. Fillet shapes are captured in photographs obtained by a high speed image system. Experiments were conducted using water, UPA and PF 5060 on two surfaces-stand-blasted titanium and polished copper for different surface inclinations. Experimental data are generalized using appropriate non-dimensional groups. Analytical model are developed to describe the fillet curvature. Fillet curvature data are compared against model predictions and are found to be in close agreement. Bubble point experiments were carried out to measure the capillary pressure difference across the liquid-gas interface in the channels of photo-chemically etched disk stacks. Experiments were conducted using titanium stacks of five different geometrical configurations. Both well wetting liquids (IPA and PF5060) and partially wetting liquid (water) were used during experiments. Test results are found to be in close agreement with analytical predictions. Experiments were carried out to measure the frictional pressure drop across the stack as a function of liquid flow rate using two different liquids (water and IPA) and five stacks of different geometrical configurations. A channel pressure drop model is developed by treating the flow within stack channels as fully developed laminar flow between parallel plates and solving the one-dimensional Navier Stokes equation. An alternate model is developed by treating the flow in channels as flow within porous media. Expressions are developed for effective porosity and permeability for the stacks and the pressure drop is related to these parameters. Pressure drop test results are found to be in close agreement with model predictions. As a specific application of this work, a surface tension propellant management device (PMD) that uses photo-chemically etched disk stacks as capillary elements is examined. These PMDs are used in gas pressurized liquid propellant tanks to supply gas-free propellant to rocket engines in near zero-gravity environment. The experimentally validated models are integrated to perform key analyses for predicting PMD performance in zero gravity.

Fatigue responses of lead zirconate titanate stacks under semibipolar electric cycling with mechanical preload

NASA Astrophysics Data System (ADS)

Wang, Hong; Cooper, Thomas A.; Lin, Hua-Tay; Wereszczak, Andrew A.

2010-10-01

Lead zirconate titanate (PZT) stacks that had an interdigital internal electrode configuration were tested to more than 108 cycles. A 100 Hz semibipolar sine wave with a field range of +4.5/-0.9 kV/mm was used in cycling with a concurrently-applied 20 MPa preload. Significant reductions in piezoelectric and dielectric responses were observed during the cycling depending on the measuring condition. Extensive partial discharges were also observed. These surface events resulted in the erosion of external electrode and the exposure of internal electrodes. Sections prepared by sequential polishing technique revealed a variety of damage mechanisms including delaminations, pores, and etch grooves. The scale of damage was correlated with the degree of fatigue-induced reduction in piezoelectric and dielectric responses. The results from this study demonstrate the feasibility of using a semibipolar mode to drive a PZT stack under a mechanical preload and illustrate the potential fatigue and damages of the stack in service.

Fabrication Method for LOBSTER-Eye Optics in <110> Silicon

NASA Technical Reports Server (NTRS)

Chervenak, James; Collier, Michael; Mateo, Jennette

2013-01-01

Soft x-ray optics can use narrow slots to direct x-rays into a desirable pattern on a focal plane. While square-pack, square-pore, slumped optics exist for this purpose, they are costly. Silicon (Si) is being examined as a possible low-cost replacement. A fabrication method was developed for narrow slots in <110> Si demonstrating the feasibility of stacked slot optics to replace micropores. Current micropore optics exist that have 20-micron-square pores on 26-micron pitch in glass with a depth of 1 mm and an extent of several square centimeters. Among several proposals to emulate the square pore optics are stacked slot chips with etched vertical slots. When the slots in the stack are positioned orthogonally to each other, the component will approach the soft x-ray focusing observed in the micropore optics. A specific improvement Si provides is that it can have narrower sidewalls between slots to permit greater throughput of x-rays through the optics. In general, Si can have more variation in slot geometry (width, length). Further, the sidewalls can be coated with high-Z materials to enhance reflection and potentially reduce the surface roughness of the reflecting surface. Narrow, close-packed deep slots in <110> Si have been produced using potassium hydroxide (KOH) etching and a patterned silicon nitride (SiN) mask. The achieved slot geometries have sufficient wall smoothness, as observed through scanning electron microscope (SEM) imaging, to enable evaluation of these slot plates as an optical element for soft x-rays. Etches of different angles to the crystal plane of Si were evaluated to identify a specific range of etch angles that will enable low undercut slots in the Si <110> material. These slots with the narrow sidewalls are demonstrated to several hundred microns in depth, and a technical path to 500-micron deep slots in a precision geometry of narrow, closepacked slots is feasible. Although intrinsic stress in ultrathin wall Si is observed, slots with walls approaching 1.5 microns can be achieved (a significant improvement over the 6-micron walls in micro - pore optics). The major advantages of this technique are the potential for higher x-ray throughout (due to narrow slot walls) and lower cost over the existing slumped micropore glass plates. KOH etching of smooth sidewalls has been demonstrated for many applications, suggesting its feasibility for implementation in x-ray optics. Si cannot be slumped like the micropore optics, so the focusing will be achieved with millimeter-scale slot plates that populate a spherical dome. The possibility for large-scale production exists for Si parts that is more difficult to achieve in micropore parts.

An Easy to Manufacture Micro Gas Preconcentrator for Chemical Sensing Applications.

PubMed

McCartney, Mitchell M; Zrodnikov, Yuriy; Fung, Alexander G; LeVasseur, Michael K; Pedersen, Josephine M; Zamuruyev, Konstantin O; Aksenov, Alexander A; Kenyon, Nicholas J; Davis, Cristina E

2017-08-25

We have developed a simple-to-manufacture microfabricated gas preconcentrator for MEMS-based chemical sensing applications. Cavities and microfluidic channels were created using a wet etch process with hydrofluoric acid, portions of which can be performed outside of a cleanroom, instead of the more common deep reactive ion etch process. The integrated heater and resistance temperature detectors (RTDs) were created with a photolithography-free technique enabled by laser etching. With only 28 V DC (0.1 A), a maximum heating rate of 17.6 °C/s was observed. Adsorption and desorption flow parameters were optimized to be 90 SCCM and 25 SCCM, respectively, for a multicomponent gas mixture. Under testing conditions using Tenax TA sorbent, the device was capable of measuring analytes down to 22 ppb with only a 2 min sample loading time using a gas chromatograph with a flame ionization detector. Two separate devices were compared by measuring the same chemical mixture; both devices yielded similar peak areas and widths (fwhm: 0.032-0.033 min), suggesting reproducibility between devices.

Phosphorus oxide gate dielectric for black phosphorus field effect transistors

NASA Astrophysics Data System (ADS)

Dickerson, W.; Tayari, V.; Fakih, I.; Korinek, A.; Caporali, M.; Serrano-Ruiz, M.; Peruzzini, M.; Heun, S.; Botton, G. A.; Szkopek, T.

2018-04-01

The environmental stability of the layered semiconductor black phosphorus (bP) remains a challenge. Passivation of the bP surface with phosphorus oxide, POx, grown by a reactive ion etch with oxygen plasma is known to improve photoluminescence efficiency of exfoliated bP flakes. We apply phosphorus oxide passivation in the fabrication of bP field effect transistors using a gate stack consisting of a POx layer grown by reactive ion etching followed by atomic layer deposition of Al2O3. We observe room temperature top-gate mobilities of 115 cm2 V-1 s-1 in ambient conditions, which we attribute to the low defect density of the bP/POx interface.

On the influence of etch pits in the overall dissolution rate of apatite basal sections

NASA Astrophysics Data System (ADS)

Alencar, Igor; Guedes, Sandro; Palissari, Rosane; Hadler, Julio C.

2015-09-01

Determination of efficiencies for particle detection plays a central role for proper estimation of reaction rates. If chemical etching is employed in the revelation of latent particle tracks in solid-state detectors, dissolution rates and etchable lengths are important factors governing the revelation and observation. In this work, the mask method, where a reference part of the sample is protected during dissolution, was employed to measure step heights in basal sections of apatite etched with a nitric acid, HNO, solution at a concentration of 1.1 M and a temperature of 20 °C. We show a drastic increase in the etching velocity as the number of etch pits in the surface augments, in accordance with the dissolution stepwave model, where the outcrop of each etch pit generates a continuous sequence of stepwaves. The number of etch pits was varied by irradiation with neutrons and perpendicularly incident heavy ions. The size dependence of the etch-pit opening with etching duration for ion (200-300 MeV 152Sm and 238U) tracks was also investigated. There is no distinction for the etch pits between the different ions, and the dissolution seems to be governed by the opening velocity when a high number of etch pits are present in the surface. Measurements of the etchable lengths of these ion tracks show an increase in these lengths when samples are not pre-annealed before irradiation. We discuss the implications of these findings for fission-track modelling.

Conceptual design of a hybrid Ge:Ga detector array

NASA Technical Reports Server (NTRS)

Parry, C. M.

1984-01-01

For potential applications in space infrared astronomy missions such as the Space Infrared Telescope Facility and the Large Deployable Reflector, integrated arrays of long-wavelength detectors are desired. The results of a feasibility study which developed a design for applying integrated array techniques to a long-wavelength (gallium-doped germanium) material to achieve spectral coverage between 30 and 200 microns are presented. An approach which builds up a two-dimensional array by stacking linear detector modules is presented. The spectral response of the Ge:Ga detectors is extended to 200 microns by application of uniaxial stress to the stack of modules. The detectors are assembled with 1 mm spacing between the elements. Multiplexed readout of each module is accomplished with integration sampling of a metal-oxide-semiconductor (MOS) switch chip. Aspects of the overall design, including the anticipated level of particle effects on the array in the space environment, a transparent electrode design for 200 microns response, estimates of optical crosstalk, and mechanical stress design calculations are included.

Fabrication of Pop-up Detector Arrays on Si Wafers

NASA Technical Reports Server (NTRS)

Li, Mary J.; Allen, Christine A.; Gordon, Scott A.; Kuhn, Jonathan L.; Mott, David B.; Stahle, Caroline K.; Wang, Liqin L.

1999-01-01

High sensitivity is a basic requirement for a new generation of thermal detectors. To meet the requirement, close-packed, two-dimensional silicon detector arrays have been developed in NASA Goddard Space Flight Center. The goal of the task is to fabricate detector arrays configured with thermal detectors such as infrared bolometers and x-ray calorimeters to use in space fliGht missions. This paper focuses on the fabrication and the mechanical testing of detector arrays in a 0.2 mm pixel size, the smallest pop-up detectors being developed so far. These array structures, nicknamed "PUDS" for "Pop-Up Detectors", are fabricated on I pm thick, single-crystal, silicon membranes. Their designs have been refined so we can utilize the flexibility of thin silicon films by actually folding the silicon membranes to 90 degrees in order to obtain close-packed two-dimensional arrays. The PUD elements consist of a detector platform and two legs for mechanical support while also serving as electrical and thermal paths. Torsion bars and cantilevers connecting the detector platform to the legs provide additional flexures for strain relief. Using micro-electromechanical structure (MEMS) fabrication techniques, including photolithography, anisotropic chemical etching, reactive-ion etching, and laser dicing, we have fabricated PLTD detector arrays of fourteen designs with a variation of four parameters including cantilever length, torsion bar length and width, and leg length. Folding tests were conducted to test mechanical stress distribution for the array structures. We obtained folding yields and selected optimum design parameters to reach minimal stress levels. Computer simulation was also employed to verify mechanical behaviors of PUDs in the folding process. In addition, scanning electron microscopy was utilized to examine the flatness of detectors and the alignment of detector pixels in arrays. The fabrication of thermistors and heaters on the pop-up detectors is under way, preparing us for the next step of the experiment, the thermal test.

Enabling Large Focal Plane Arrays Through Mosaic Hybridization

NASA Technical Reports Server (NTRS)

Miller, Timothy M.; Jhabvala, Christine A.; Leong, Edward; Costen, Nick P.; Sharp, Elmer; Adachi, Tomoko; Benford, Dominic J.

2012-01-01

We have demonstrated advances in mosaic hybridization that will enable very large format far-infrared detectors. Specifically we have produced electrical detector models via mosaic hybridization yielding superconducting circuit patbs by hybridizing separately fabricated sub-units onto a single detector unit. The detector model was made on a 100mm diameter wafer while four model readout quadrant chips were made from a separate 100mm wafer. The individually fabric.ted parts were hybridized using a Suss FCI50 flip chip bonder to assemble the detector-readout stack. Once all of the hybridized readouts were in place, a single, large and thick silicon substrate was placed on the stack and attached with permanent epoxy to provide strength and a Coefficient of Thermal Expansion match to the silicon components underneath. Wirebond pads on the readout chips connect circuits to warm readout electronics; and were used to validate the successful superconducting electrical interconnection of the model mosaic-hybrid detector. This demonstration is directly scalable to 150 mm diameter wafers, enabling pixel areas over ten times the area currently available.

Mechanical Design and Development of TES Bolometer Detector Arrays for the Advanced ACTPol Experiment

NASA Technical Reports Server (NTRS)

Ward, Jonathan T.; Austermann, Jason; Beall, James A.; Choi, Steve K.; Crowley, Kevin T.; Devlin, Mark J.; Duff, Shannon M.; Gallardo, Patricio M.; Henderson, Shawn W.; Ho, Shuay-Pwu Patty;

Mechanical designs and development of TES bolometer detector arrays for the Advanced ACTPol experiment

NASA Astrophysics Data System (ADS)

Ward, Jonathan T.; Austermann, Jason; Beall, James A.; Choi, Steve K.; Crowley, Kevin T.; Devlin, Mark J.; Duff, Shannon M.; Gallardo, Patricio A.; Henderson, Shawn W.; Ho, Shuay-Pwu Patty; Hilton, Gene; Hubmayr, Johannes; Khavari, Niloufar; Klein, Jeffrey; Koopman, Brian J.; Li, Dale; McMahon, Jeffrey; Mumby, Grace; Nati, Federico; Niemack, Michael D.; Page, Lyman A.; Salatino, Maria; Schillaci, Alessandro; Schmitt, Benjamin L.; Simon, Sara M.; Staggs, Suzanne T.; Thornton, Robert; Ullom, Joel N.; Vavagiakis, Eve M.; Wollack, Edward J.

2016-07-01

The next generation Advanced ACTPol (AdvACT) experiment is currently underway and will consist of four Transition Edge Sensor (TES) bolometer arrays, with three operating together, totaling 5800 detectors on the sky. Building on experience gained with the ACTPol detector arrays, AdvACT will utilize various new technologies, including 150 mm detector wafers equipped with multichroic pixels, allowing for a more densely packed focal plane. Each set of detectors includes a feedhorn array of stacked silicon wafers which form a spline profile leading to each pixel. This is then followed by a waveguide interface plate, detector wafer, back short cavity plate, and backshort cap. Each array is housed in a custom designed structure manufactured from high purity copper and then gold plated. In addition to the detector array assembly, the array package also encloses cryogenic readout electronics. We present the full mechanical design of the AdvACT high frequency (HF) detector array package along with a detailed look at the detector array stack assemblies. This experiment will also make use of extensive hardware and software previously developed for ACT, which will be modified to incorporate the new AdvACT instruments. Therefore, we discuss the integration of all AdvACT arrays with pre-existing ACTPol infrastructure.

Reduced Noise UV Enhancement of Etch Rates for Nuclear Tracks in CR-39

NASA Astrophysics Data System (ADS)

Sheets, Rebecca; Clarkson, David; Ume, Rubab; Regan, Sean; Sangster, Craig; Padalino, Stephen; McLean, James

2016-10-01

The use of CR-39 plastic as a Solid State Nuclear Track Detector is an effective technique for obtaining data in high-energy particle experiments including inertial confinement fusion. To reveal particle tracks after irradiation, CR-39 is chemically etched in NaOH at 80°C for 6 hours, producing micron-scale signal pits at the nuclear track sites. Using CR-39 irradiated with 5.4 MeV alpha particles and 1.0 MeV protons, we show that exposing the CR-39 to high intensity UV light before etching, with wavelengths between 240 nm and 350 nm, speeds the etch process. Elevated temperatures during UV exposure amplifies this effect, with etch rates up to 50% greater than unprocessed conditions. CR-39 pieces exposed to UV light and heat can also exhibit heightened levels of etch-induced noise (surface features not caused by nuclear particles). By illuminating the CR-39 from the side opposite to the tracks, a similar level of etch enhancement was obtained with little to no noise. The effective wavelength range is reduced, due to strong attenuation of shorter wavelengths. Funded in part by a LLE contract through the DOE.

A transmission imaging spectrograph and microfabricated channel system for DNA analysis.

PubMed

Simpson, J W; Ruiz-Martinez, M C; Mulhern, G T; Berka, J; Latimer, D R; Ball, J A; Rothberg, J M; Went, G T

2000-01-01

In this paper we present the development of a DNA analysis system using a microfabricated channel device and a novel transmission imaging spectrograph which can be efficiently incorporated into a high throughput genomics facility for both sizing and sequencing of DNA fragments. The device contains 48 channels etched on a glass substrate. The channels are sealed with a flat glass plate which also provides a series of apertures for sample loading and contact with buffer reservoirs. Samples can be easily loaded in volumes up to 640 nL without band broadening because of an efficient electrokinetic stacking at the electrophoresis channel entrance. The system uses a dual laser excitation source and a highly sensitive charge-coupled device (CCD) detector allowing for simultaneous detection of many fluorescent dyes. The sieving matrices for the separation of single-stranded DNA fragments are polymerized in situ in denaturing buffer systems. Examples of separation of single-stranded DNA fragments up to 500 bases in length are shown, including accurate sizing of GeneCalling fragments, and sequencing samples prepared with a reduced amount of dye terminators. An increase in sample throughput has been achieved by color multiplexing.

Non-CAR resists and advanced materials for Massively Parallel E-Beam Direct Write process integration

NASA Astrophysics Data System (ADS)

Pourteau, Marie-Line; Servin, Isabelle; Lepinay, Kévin; Essomba, Cyrille; Dal'Zotto, Bernard; Pradelles, Jonathan; Lattard, Ludovic; Brandt, Pieter; Wieland, Marco

2016-03-01

The emerging Massively Parallel-Electron Beam Direct Write (MP-EBDW) is an attractive high resolution high throughput lithography technology. As previously shown, Chemically Amplified Resists (CARs) meet process/integration specifications in terms of dose-to-size, resolution, contrast, and energy latitude. However, they are still limited by their line width roughness. To overcome this issue, we tested an alternative advanced non-CAR and showed it brings a substantial gain in sensitivity compared to CAR. We also implemented and assessed in-line post-lithographic treatments for roughness mitigation. For outgassing-reduction purpose, a top-coat layer is added to the total process stack. A new generation top-coat was tested and showed improved printing performances compared to the previous product, especially avoiding dark erosion: SEM cross-section showed a straight pattern profile. A spin-coatable charge dissipation layer based on conductive polyaniline has also been tested for conductivity and lithographic performances, and compatibility experiments revealed that the underlying resist type has to be carefully chosen when using this product. Finally, the Process Of Reference (POR) trilayer stack defined for 5 kV multi-e-beam lithography was successfully etched with well opened and straight patterns, and no lithography-etch bias.

3D imaging of neutron tracks using confocal microscopy

NASA Astrophysics Data System (ADS)

Gillmore, Gavin; Wertheim, David; Flowers, Alan

2016-04-01

Neutron detection and neutron flux assessment are important aspects in monitoring nuclear energy production. Neutron flux measurements can also provide information on potential biological damage from exposure. In addition to the applications for neutron measurement in nuclear energy, neutron detection has been proposed as a method of enhancing neutrino detectors and cosmic ray flux has also been assessed using ground-level neutron detectors. Solid State Nuclear Track Detectors (or SSNTDs) have been used extensively to examine cosmic rays, long-lived radioactive elements, radon concentrations in buildings and the age of geological samples. Passive SSNTDs consisting of a CR-39 plastic are commonly used to measure radon because they respond to incident charged particles such as alpha particles from radon gas in air. They have a large dynamic range and a linear flux response. We have previously applied confocal microscopy to obtain 3D images of alpha particle tracks in SSNTDs from radon track monitoring (1). As a charged particle traverses through the polymer it creates an ionisation trail along its path. The trail or track is normally enhanced by chemical etching to better expose radiation damage, as the damaged area is more sensitive to the etchant than the bulk material. Particle tracks in CR-39 are usually assessed using 2D optical microscopy. In this study 6 detectors were examined using an Olympus OLS4100 LEXT 3D laser scanning confocal microscope (Olympus Corporation, Japan). The detectors had been etched for 2 hours 50 minutes at 85 °C in 6.25M NaOH. Post etch the plastics had been treated with a 10 minute immersion in a 2% acetic acid stop bath, followed by rinsing in deionised water. The detectors examined had been irradiated with a 2mSv neutron dose from an Am(Be) neutron source (producing roughly 20 tracks per mm2). We were able to successfully acquire 3D images of neutron tracks in the detectors studied. The range of track diameter observed was between 4 and 10 microns. Thus this study suggests that, using confocal microscopy, 3D imaging of neutron tracks in SSNTDs is feasible. (1) Wertheim D, Gillmore G, Brown L, Petford N. A new method of imaging particle tracks in solid state nuclear track detectors. J Microsc. 2010; 237: 1-6.

Modeling of direct wafer bonding: Effect of wafer bow and etch patterns

NASA Astrophysics Data System (ADS)

Turner, K. T.; Spearing, S. M.

2002-12-01

Direct wafer bonding is an important technology for the manufacture of silicon-on-insulator substrates and microelectromechanical systems. As devices become more complex and require the bonding of multiple patterned wafers, there is a need to understand the mechanics of the bonding process. A general bonding criterion based on the competition between the strain energy accumulated in the wafers and the surface energy that is dissipated as the bond front advances is developed. The bonding criterion is used to examine the case of bonding bowed wafers. An analytical expression for the strain energy accumulation rate, which is the quantity that controls bonding, and the final curvature of a bonded stack is developed. It is demonstrated that the thickness of the wafers plays a large role and bonding success is independent of wafer diameter. The analytical results are verified through a finite element model and a general method for implementing the bonding criterion numerically is presented. The bonding criterion developed permits the effect of etched features to be assessed. Shallow etched patterns are shown to make bonding more difficult, while it is demonstrated that deep etched features can facilitate bonding. Model results and their process design implications are discussed in detail.

Optimizing the position resolution of a Z-stack microchannel plate resistive anode detector for low intensity signals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wiggins, B. B.; Richardson, E.; Siwal, D.

A method for achieving good position resolution of low-intensity electron signals using a microchannel plate resistive anode detector is demonstrated. Electron events at a rate of 7 counts s{sup −1} are detected using a Z-stack microchannel plate. The dependence of position resolution on both the distance and the potential difference between the microchannel plate and resistive anode is investigated. Using standard commercial electronics, a measured position resolution of 170 μm (FWHM) is obtained, which corresponds to an intrinsic resolution of 157 μm (FWHM)

Radially polarized conical beam from an embedded etched fiber.

PubMed

Kalaidji, Djamel; Spajer, Michel; Marthouret, Nadège; Grosjean, Thierry

2009-06-15

We propose a method for producing a conical beam based on the lateral refraction of the TM(01) mode from a two-mode fiber after chemical etching of the cladding, and for controlling its radial polarization. The whole power of the guided mode is transferred to the refracted beam with low diffraction. Polarization control by a series of azimuthal detectors and a stress controller affords the transmission of a stabilized radial polarization through an optical fiber. A solid component usable for many applications has been obtained.

Novel Heterongineered Detectors for Multi-Color Infrared Sensing

DTIC Science & Technology

2012-01-30

barriers”. Appl. Phys. Lett. 98, 121106 (2011) 9. A. Khoshakhlagh, F. Jaeckel C. Hains J. B. Rodriguez , L. R. Dawson, K. Malloy, and S. Krishna...AlAs etch-stop layer. The detailed processing sequence is included in the Methods. b da c n + -GaAs 200 nm Mesa lndium bump 2.1 –2.1 FPA p d SP-FPA...FPA chip. The processing scheme of the plasmonic FPA chip consists of a dry etch to form the mesa , surface passivation, ohmic metal evaporation, under

The processing of enriched germanium for the Majorana Demonstrator and R&D for a next generation double-beta decay experiment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abgrall, N.; Arnquist, I. J.; Avignone III, F. T.

The Majorana Demonstrator is an array of point-contact Ge detectors fabricated from Ge isotopically enriched to 88% in 76Ge to search for neutrinoless double beta decay. The processing of Ge for germanium detectors is a well-known technology. However, because of the high cost of Ge enriched in 76Ge special procedures were required to maximize the yield of detector mass and to minimize exposure to cosmic rays. These procedures include careful accounting for the material; shielding it to reduce cosmogenic generation of radioactive isotopes; and development of special reprocessing techniques for contaminated solid germanium, shavings, grindings, acid etchant and cutting fluidsmore » from detector fabrication. Processing procedures were developed that resulted in a total yield in detector mass of 70%. However, none of the acid-etch solution and only 50% of the cutting fluids from detector fabrication were reprocessed. Had they been processed, the projections for the recovery yield would be between 80% and 85%. Maximizing yield is critical to justify a possible future ton-scale experiment. A process for recovery of germanium from the acid-etch solution was developed with yield of about 90%. All material was shielded or stored underground whenever possible to minimize the formation of 68Ge by cosmic rays, which contributes background in the double-beta decay region of interest and cannot be removed by zone refinement and crystal growth. Formation of 68Ge was reduced by a significant factor over that in natural abundance detectors not protected from cosmic rays.« less

Ion beam evaluation of silicon carbide membrane structures intended for particle detectors

NASA Astrophysics Data System (ADS)

Pallon, J.; Syväjärvi, M.; Wang, Q.; Yakimova, R.; Iakimov, T.; Elfman, M.; Kristiansson, P.; Nilsson, E. J. C.; Ros, L.

2016-03-01

Thin ion transmission detectors can be used as a part of a telescope detector for mass and energy identification but also as a pre-cell detector in a microbeam system for studies of biological effects from single ion hits on individual living cells. We investigated a structure of graphene on silicon carbide (SiC) with the purpose to explore a thin transmission detector with a very low noise level and having mechanical strength to act as a vacuum window. In order to reach very deep cavities in the SiC wafers for the preparation of the membrane in the detector, we have studied the Inductive Coupled Plasma technique to etch deep circular cavities in 325 μm prototype samples. By a special high temperature process the outermost layers of the etched SiC wafers were converted into a highly conductive graphitic layer. The produced cavities were characterized by electron microscopy, optical microscopy and proton energy loss measurements. The average membrane thickness was found to be less than 40 μm, however, with a slightly curved profile. Small spots representing much thinner membrane were also observed and might have an origin in crystal defects or impurities. Proton energy loss measurement (also called Scanning Transmission Ion Microscopy, STIM) is a well suited technique for this thickness range. This work presents the first steps of fabricating a membrane structure of SiC and graphene which may be an attractive approach as a detector due to the combined properties of SiC and graphene in a monolithic materials structure.

The processing of enriched germanium for the Majorana   Demonstrator  and R&D for a next generation double-beta decay experiment

DOE PAGES

Abgrall, N.; Arnquist, I. J.; Avignone III, F. T.; ...

2017-10-07

The Majorana Demonstrator is an array of point-contact Ge detectors fabricated from Ge isotopically enriched to 88% in 76Ge to search for neutrinoless double beta decay. The processing of Ge for germanium detectors is a well-known technology. However, because of the high cost of Ge enriched in 76Ge special procedures were required to maximize the yield of detector mass and to minimize exposure to cosmic rays. These procedures include careful accounting for the material; shielding it to reduce cosmogenic generation of radioactive isotopes; and development of special reprocessing techniques for contaminated solid germanium, shavings, grindings, acid etchant and cutting fluidsmore » from detector fabrication. Processing procedures were developed that resulted in a total yield in detector mass of 70%. However, none of the acid-etch solution and only 50% of the cutting fluids from detector fabrication were reprocessed. Had they been processed, the projections for the recovery yield would be between 80% and 85%. Maximizing yield is critical to justify a possible future ton-scale experiment. A process for recovery of germanium from the acid-etch solution was developed with yield of about 90%. All material was shielded or stored underground whenever possible to minimize the formation of 68Ge by cosmic rays, which contributes background in the double-beta decay region of interest and cannot be removed by zone refinement and crystal growth. Formation of 68Ge was reduced by a significant factor over that in natural abundance detectors not protected from cosmic rays.« less

The processing of enriched germanium for the MAJORANA DEMONSTRATOR and R&D for a next generation double-beta decay experiment

NASA Astrophysics Data System (ADS)

Abgrall, N.; Arnquist, I. J.; Avignone, F. T., III; Barabash, A. S.; Bertrand, F. E.; Bradley, A. W.; Brudanin, V.; Busch, M.; Buuck, M.; Caja, J.; Caja, M.; Caldwell, T. S.; Christofferson, C. D.; Chu, P.-H.; Cuesta, C.; Detwiler, J. A.; Dunagan, C.; Dunstan, D. T.; Efremenko, Yu.; Ejiri, H.; Elliott, S. R.; Gilliss, T.; Giovanetti, G. K.; Goett, J.; Green, M. P.; Gruszko, J.; Guinn, I. S.; Guiseppe, V. E.; Haufe, C. R. S.; Henning, R.; Hoppe, E. W.; Jasinski, B. R.; Kidd, M. F.; Konovalov, S. I.; Kouzes, R. T.; Lopez, A. M.; MacMullin, J.; Martin, R. D.; Massarczyk, R.; Meijer, S. J.; Mertens, S.; Meyer, J. H.; Myslik, J.; O'Shaughnessy, C.; Poon, A. W. P.; Radford, D. C.; Rager, J.; Reine, A. L.; Reising, J. A.; Rielage, K.; Robertson, R. G. H.; Shanks, B.; Shirchenko, M.; Suriano, A. M.; Tedeschi, D.; Toth, L. M.; Trimble, J. E.; Varner, R. L.; Vasilyev, S.; Vetter, K.; Vorren, K.; White, B. R.; Wilkerson, J. F.; Wiseman, C.; Xu, W.; Yakushev, E.; Yu, C.-H.; Yumatov, V.; Zhitnikov, I.; Zhu, B. X.

2018-01-01

The MAJORANA DEMONSTRATOR is an array of point-contact Ge detectors fabricated from Ge isotopically enriched to 88% in 76 Ge to search for neutrinoless double beta decay. The processing of Ge for germanium detectors is a well-known technology. However, because of the high cost of Ge enriched in 76 Ge special procedures were required to maximize the yield of detector mass and to minimize exposure to cosmic rays. These procedures include careful accounting for the material; shielding it to reduce cosmogenic generation of radioactive isotopes; and development of special reprocessing techniques for contaminated solid germanium, shavings, grindings, acid etchant and cutting fluids from detector fabrication. Processing procedures were developed that resulted in a total yield in detector mass of 70%. However, none of the acid-etch solution and only 50% of the cutting fluids from detector fabrication were reprocessed. Had they been processed, the projections for the recovery yield would be between 80% and 85%. Maximizing yield is critical to justify a possible future ton-scale experiment. A process for recovery of germanium from the acid-etch solution was developed with yield of about 90%. All material was shielded or stored underground whenever possible to minimize the formation of 68Ge by cosmic rays, which contributes background in the double-beta decay region of interest and cannot be removed by zone refinement and crystal growth. Formation of 68Ge was reduced by a significant factor over that in natural abundance detectors not protected from cosmic rays.

The processing of enriched germanium for the Majorana Demonstrator and R&D for a next generation double-beta decay experiment

DOE PAGES

Abgrall, N.; Arnquist, I. J.; Avignone III, F. T.; ...

2017-10-07

The Majorana Demonstrator is an array of point-contact Ge detectors fabricated from Ge isotopically enriched to 88% in 76Ge to search for neutrinoless double beta decay. The processing of Ge for germanium detectors is a well-known technology. However, because of the high cost of Ge enriched in 76Ge special procedures were required to maximize the yield of detector mass and to minimize exposure to cosmic rays. These procedures include careful accounting for the material; shielding it to reduce cosmogenic generation of radioactive isotopes; and development of special reprocessing techniques for contaminated solid germanium, shavings, grindings, acid etchant and cutting fluidsmore » from detector fabrication. Processing procedures were developed that resulted in a total yield in detector mass of 70%. However, none of the acid-etch solution and only 50% of the cutting fluids from detector fabrication were reprocessed. Had they been processed, the projections for the recovery yield would be between 80% and 85%. Maximizing yield is critical to justify a possible future ton-scale experiment. A process for recovery of germanium from the acid-etch solution was developed with yield of about 90%. All material was shielded or stored underground whenever possible to minimize the formation of 68Ge by cosmic rays, which contributes background in the double-beta decay region of interest and cannot be removed by zone refinement and crystal growth. Formation of 68Ge was reduced by a significant factor over that in natural abundance detectors not protected from cosmic rays.« less

Dry etched SiO2 Mask for HgCdTe Etching Process

NASA Astrophysics Data System (ADS)

Chen, Y. Y.; Ye, Z. H.; Sun, C. H.; Deng, L. G.; Zhang, S.; Xing, W.; Hu, X. N.; Ding, R. J.; He, L.

2016-09-01

A highly anisotropic etching process with low etch-induced damage is indispensable for advanced HgCdTe (MCT) infrared focal plane array (IRFPA) detectors. The inductively coupled plasma (ICP) enhanced reactive ion etching technique has been widely adopted in manufacturing HgCdTe IRFPA devices. An accurately patterned mask with sharp edges is decisive to accomplish pattern duplication. It has been reported by our group that the SiO2 mask functions well in etching HgCdTe with high selectivity. However, the wet process in defining the SiO2 mask is limited by ambiguous edges and nonuniform patterns. In this report, we patterned SiO2 with a mature ICP etching technique, prior to which a thin ZnS film was deposited by thermal evaporation. The SiO2 film etching can be terminated at the auto-stopping point of the ZnS layer thanks to the high selectivity of SiO2/ZnS in SF6 based etchant. Consequently, MCT etching was directly performed without any other treatment. This mask showed acceptable profile due to the maturity of the SiO2 etching process. The well-defined SiO2 pattern and the etched smooth surfaces were investigated with scanning electron microscopy and atomic force microscope. This new mask process could transfer the patterns exactly with very small etch-bias. A cavity with aspect-ratio (AR) of 1.2 and root mean square roughness of 1.77 nm was achieved first, slightly higher AR of 1.67 was also get with better mask profile. This masking process ensures good uniformity and surely benefits the delineation of shrinking pixels with its high resolution.

Design and fabrication of resonator-quantum well infrared photodetector for SF6 gas sensor application

NASA Astrophysics Data System (ADS)

Sun, Jason; Choi, Kwong-Kit; DeCuir, Eric; Olver, Kimberley; Fu, Richard

2017-07-01

The infrared absorption of SF6 gas is narrowband and peaks at 10.6 μm. This narrowband absorption posts a stringent requirement on the corresponding sensors as they need to collect enough signal from this limited spectral bandwidth to maintain a high sensitivity. Resonator-quantum well infrared photodetectors (R-QWIPs) are the next generation of QWIP detectors that use resonances to increase the quantum efficiency for more efficient signal collection. Since the resonant approach is applicable to narrowband as well as broadband, it is particularly suitable for this application. We designed and fabricated R-QWIPs for SF6 gas detection. To achieve the expected performance, the detector geometry must be produced according to precise specifications. In particular, the height of the diffractive elements and the thickness of the active resonator must be uniform, and accurately realized to within 0.05 μm. Additionally, the substrates of the detectors must be completely removed to prevent the escape of unabsorbed light in the detectors. To achieve these specifications, two optimized inductively coupled plasma etching processes were developed. Due to submicron detector feature sizes and overlay tolerance, we used an advanced semiconductor material lithography stepper instead of a contact mask aligner to pattern wafers. Using these etching techniques and tool, we have fabricated focal plane arrays with 30-μm pixel pitch and 320×256 format. The initial test revealed promising results.

High resolution, multiple-energy linear sweep detector for x-ray imaging

DOEpatents

Perez-Mendez, Victor; Goodman, Claude A.

1996-01-01

Apparatus for generating plural electrical signals in a single scan in response to incident X-rays received from an object. Each electrical signal represents an image of the object at a different range of energies of the incident X-rays. The apparatus comprises a first X-ray detector, a second X-ray detector stacked upstream of the first X-ray detector, and an X-ray absorber stacked upstream of the first X-ray detector. The X-ray absorber provides an energy-dependent absorption of the incident X-rays before they are incident at the first X-ray detector, but provides no absorption of the incident X-rays before they are incident at the second X-ray detector. The first X-ray detector includes a linear array of first pixels, each of which produces an electrical output in response to the incident X-rays in a first range of energies. The first X-ray detector also includes a circuit that generates a first electrical signal in response to the electrical output of each of the first pixels. The second X-ray detector includes a linear array of second pixels, each of which produces an electrical output in response to the incident X-rays in a second range of energies, broader than the first range of energies. The second X-ray detector also includes a circuit that generates a second electrical signal in response to the electrical output of each of the second pixels.

High resolution, multiple-energy linear sweep detector for x-ray imaging

DOEpatents

Perez-Mendez, V.; Goodman, C.A.

1996-08-20

Apparatus is disclosed for generating plural electrical signals in a single scan in response to incident X-rays received from an object. Each electrical signal represents an image of the object at a different range of energies of the incident X-rays. The apparatus comprises a first X-ray detector, a second X-ray detector stacked upstream of the first X-ray detector, and an X-ray absorber stacked upstream of the first X-ray detector. The X-ray absorber provides an energy-dependent absorption of the incident X-rays before they are incident at the first X-ray detector, but provides no absorption of the incident X-rays before they are incident at the second X-ray detector. The first X-ray detector includes a linear array of first pixels, each of which produces an electrical output in response to the incident X-rays in a first range of energies. The first X-ray detector also includes a circuit that generates a first electrical signal in response to the electrical output of each of the first pixels. The second X-ray detector includes a linear array of second pixels, each of which produces an electrical output in response to the incident X-rays in a second range of energies, broader than the first range of energies. The second X-ray detector also includes a circuit that generates a second electrical signal in response to the electrical output of each of the second pixels. 12 figs.

High-Temperature Performance of Stacked Silicon Nanowires for Thermoelectric Power Generation

NASA Astrophysics Data System (ADS)

Stranz, Andrej; Waag, Andreas; Peiner, Erwin

2013-07-01

Deep reactive-ion etching at cryogenic temperatures (cryo-DRIE) has been used to produce arrays of silicon nanowires (NWs) for thermoelectric (TE) power generation devices. Using cryo-DRIE, we were able to fabricate NWs of large aspect ratios (up to 32) using a photoresist mask. Roughening of the NW sidewalls occurred, which has been recognized as beneficial for low thermal conductivity. Generated NWs, which were 7 μm in length and 220 nm to 270 nm in diameter, were robust enough to be stacked with a bulk silicon chip as a common top contact to the NWs. Mechanical support of the NW array, which can be created by filling the free space between the NWs using silicon oxide or polyimide, was not required. The Seebeck voltage, measured across multiple stacks of up to 16 bulk silicon dies, revealed negligible thermal interface resistance. With stacked silicon NWs, we observed Seebeck voltages that were an order of magnitude higher than those observed for bulk silicon. Degradation of the TE performance of silicon NWs was not observed for temperatures up to 470°C and temperature gradients up to 170 K.

Characterization of Low Noise TES Detectors Fabricated by D-RIE Process for SAFARI Short-Wavelength Band

NASA Astrophysics Data System (ADS)

Khosropanah, P.; Suzuki, T.; Hijmering, R. A.; Ridder, M. L.; Lindeman, M. A.; Gao, J.-R.; Hoevers, H.

2014-08-01

SRON is developing TES detectors based on a superconducting Ti/Au bilayer on a suspended SiN membrane for the short-wavelength band of the SAFARI instrument on SPICA mission. We have recently replaced the wet KOH etching of the Si substrate by deep reactive ion etching. The new process enables us to fabricate the detectors on the substrate and release the membrane at the very last step. Therefore the production of SAFARI large arrays (4343) on thin SiN membrane (250 nm) is feasible. It also makes it possible to realize narrow supporting SiN legs of 1 m, which are needed to meet SAFARI NEP requirements. Here we report the current-voltage characteristics, noise performance and impedance measurement of these devices. The measured results are then compared with the distributed leg model that takes into account the thermal fluctuation noise due to the SiN legs. We measured a dark NEP of 0.7 aW/, which is 1.6 times higher than the theoretically expected phonon noise.

Advances in crystal growth, device fabrication and characterization of thallium bromide detectors for room temperature applications

NASA Astrophysics Data System (ADS)

Datta, Amlan; Moed, Demi; Becla, Piotr; Overholt, Matthew; Motakef, Shariar

2016-10-01

Thallium bromide (TlBr) is a promising room-temperature radiation detector candidate with excellent charge transport properties. However, several critical issues need to be addressed before deployment of this material for long-term field applications can be realized. In this paper, progress made towards solving some of these challenges is discussed. The most significant factors for achieving long-term performance stability for TlBr devices include residual stress as generated during crystal growth and fabrication processes, surface conditions, and the choice of contact metal. Modifications to the commonly used traveling molten zone growth technique for TlBr crystals can significantly minimize the stresses generated by large temperature gradients near the melt-solid interface of the growing crystal. Plasma processing techniques were introduced for the first time to modify the Br-etched TlBr surfaces, which resulted in improvements to the surface conditions, and consequently the spectroscopic response of the detectors. Palladium electrodes resulted a 20-fold improvement in the room-temperature device lifetime when compared to its Br-etched Pt counterpart.

Multidirectional Cosmic Ray Ion Detector for Deep Space CubeSats

NASA Technical Reports Server (NTRS)

Wrbanek, John D.; Wrbanek, Susan Y.

2016-01-01

Understanding the nature of anisotropy of solar energetic protons (SEPs) and galactic cosmic ray (GCR) fluxes in the interplanetary medium is crucial in characterizing time-dependent radiation exposure in interplanetary space for future exploration missions. NASA Glenn Research Center has proposed a CubeSat-based instrument to study solar and cosmic ray ions in lunar orbit or deep space. The objective of Solar Proton Anisotropy and Galactic cosmic ray High Energy Transport Instrument (SPAGHETI) is to provide multi-directional ion data to further understand anisotropies in SEP and GCR flux. The instrument is to be developed using large area detectors fabricated from high density, high purity silicon carbide (SiC) to measure linear energy transfer (LET) of ions. Stacks of these LET detectors are arranged in a CubeSat at orthogonal directions to provide multidirectional measurements. The low-noise, thermally-stable nature of silicon carbide and its radiation tolerance allows the multidirectional array of detector stacks to be packed in a 6U CubeSat without active cooling. A concept involving additional coincidence/anticoincidence detectors and a high energy Cherenkov detector is possible to further expand ion energy range and sensitivity.

Overcoming Etch Challenges on a 6″ Hg1- x Cd x Te MBE on Si Wafer

NASA Astrophysics Data System (ADS)

Apte, Palash; Norton, Elyse; Robinson, Solomon

2017-10-01

The effect of increasing photoresist (PR) thickness on the inductively coupled plasma (ICP) dry etched characteristics of a 6″ (c.15 cm) molecular beam epitaxy Hg1- x Cd x Te/Si wafer is investigated. It is determined that the Hg1- x Cd x Te etch rate (ER) does not vary significantly with a change in the PR thickness. Also, the vertical ER of the PR is seen to be independent of the PR thickness, but the lateral ER is seen to reduce significantly with increased PR thickness. Indeed, very little reduction in the pixel mesa area post-dry etch is seen for the thicker PR. Consequently, the trench sidewall angle is also seen to vary as a function of the PR thickness. Since ICP is the more attractive choice for dry etching Hg1- x Cd x Te, this simple, cost-effective way to extend the capabilities of dry etching (larger mesa top area post-dry etch, ability to create tailor-made trench sidewall angles for optimal conformal passivation deposition, and potential for reduced dry etch damage) described here would allow for the fabrication of next generation infrared detectors with increased yield and reduced cost. Although similar results have been presented using the electron cyclotron resonance system to dry etch Hg1- x Cd x Te, to the best of our knowledge, this is the first time that such results have been presented using an ICP system.

Evolution of titanium residue on the walls of a plasma-etching reactor and its effect on the polysilicon etching rate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hirota, Kosa, E-mail: hirota-kousa@sme.hitachi-hitec.com; Itabashi, Naoshi; Tanaka, Junichi

2014-11-01

The variation in polysilicon plasma etching rates caused by Ti residue on the reactor walls was investigated. The amount of Ti residue was measured using attenuated total reflection Fourier transform infrared spectroscopy with the HgCdTe (MCT) detector installed on the side of the reactor. As the amount of Ti residue increased, the number of fluorine radicals and the polysilicon etching rate increased. However, a maximum limit in the etching rate was observed. A mechanism of rate variation was proposed, whereby F radical consumption on the quartz reactor wall is suppressed by the Ti residue. The authors also investigated a plasma-cleaningmore » method for the removal of Ti residue without using a BCl{sub 3} gas, because the reaction products (e.g., boron oxide) on the reactor walls frequently cause contamination of the product wafers during etching. CH-assisted chlorine cleaning, which is a combination of CHF{sub 3} and Cl{sub 2} plasma treatment, was found to effectively remove Ti residue from the reactor walls. This result shows that CH radicals play an important role in deoxidizing and/or defluorinating Ti residue on the reactor walls.« less

Towards radiation hard converter material for SiC-based fast neutron detectors

NASA Astrophysics Data System (ADS)

Tripathi, S.; Upadhyay, C.; Nagaraj, C. P.; Venkatesan, A.; Devan, K.

2018-05-01

In the present work, Geant4 Monte-Carlo simulations have been carried out to study the neutron detection efficiency of the various neutron to other charge particle (recoil proton) converter materials. The converter material is placed over Silicon Carbide (SiC) in Fast Neutron detectors (FNDs) to achieve higher neutron detection efficiency as compared to bare SiC FNDs. Hydrogenous converter material such as High-Density Polyethylene (HDPE) is preferred over other converter materials due to the virtue of its high elastic scattering reaction cross-section for fast neutron detection at room temperature. Upon interaction with fast neutrons, hydrogenous converter material generates recoil protons which liberate e-hole pairs in the active region of SiC detector to provide a detector signal. The neutron detection efficiency offered by HDPE converter is compared with several other hydrogenous materials viz., 1) Lithium Hydride (LiH), 2) Perylene, 3) PTCDA . It is found that, HDPE, though providing highest efficiency among various studied materials, cannot withstand high temperature and harsh radiation environment. On the other hand, perylene and PTCDA can sustain harsh environments, but yields low efficiency. The analysis carried out reveals that LiH is a better material for neutron to other charge particle conversion with competent efficiency and desired radiation hardness. Further, the thickness of LiH has also been optimized for various mono-energetic neutron beams and Am-Be neutron source generating a neutron fluence of 109 neutrons/cm2. The optimized thickness of LiH converter for fast neutron detection is found to be ~ 500 μm. However, the estimated efficiency for fast neutron detection is only 0.1%, which is deemed to be inadequate for reliable detection of neutrons. A sensitivity study has also been done investigating the gamma background effect on the neutron detection efficiency for various energy threshold of Low-Level Discriminator (LLD). The detection efficiency of a stacked structure concept has been explored by juxtaposing several converter-detector layers to improve the efficiency of LiH-SiC-based FNDs . It is observed that approximately tenfold efficiency improvement has been achieved—0.93% for ten layers stacked configuration vis-à-vis 0.1% of single converter-detector layer configuration. Finally, stacked detectors have also been simulated for different converter thicknesses to attain the efficiency as high as ~ 3.25% with the help of 50 stacked layers.

Characterization of stacked-crystal PET detector designs for measurement of both TOF and DOI.

PubMed

Schmall, Jeffrey P; Surti, Suleman; Karp, Joel S

2015-05-07

A PET detector with good timing resolution and two-level depth-of-interaction (DOI) discrimination can be constructed using a single-ended readout of scintillator stacks of Lanthanum Bromide (LaBr3), with various Cerium dopant concentrations, including pure Cerium Bromide (CeBr3). The stacked crystal geometry creates a unique signal shape for interactions occurring in each layer, which can be used to identify the DOI, while retaining the inherently good timing properties of LaBr3 and CeBr3. In this work, single pixel elements are used to optimize the choice of scintillator, coupling of layers, and type of photodetector, evaluating the performance using a fast, single-channel photomultiplier tube (PMT) and a single 4 × 4 mm(2) silicon photomultiplier (SiPM). We also introduce a method to quantify and evaluate the DOI discrimination accuracy. From signal shape measurements using fast waveform sampling, we found that in addition to differences in signal rise times, between crystal layers, there were also differences in the signal fall times. A DOI accuracy of 98% was achieved using our classification method for a stacked crystal pair, consisting of a 15 mm long LaBr3(Ce:20%) crystal on top of a 15 mm long CeBr3 crystal, readout using a PMT. A DOI accuracy of 95% was measured with a stack of two, identical, 12 mm long, CeBr3 crystals. The DOI accuracy of this crystal pair was reduced to 91% when using a SiPM for readout. For the stack of two, 12 mm long, CeBr3 crystals, a coincidence timing resolution (average of timing results from the top and bottom layer) of 199 ps was measured using a PMT, and this was improved to 153 ps when using a SiPM. These results show that with stacked LaBr3/CeBr3 scintillators and fast waveform sampling nearly perfect DOI accuracy can be achieved with excellent timing resolution-timing resolution that is only minimally degraded compared to results from a single CeBr3 crystal of comparable length to the stacked crystals. The interface in the stacked crystal geometry itself plays a major role in creating the differences in signal shape and this can be used to construct stacked DOI detectors using the same scintillator type, thereby simplifying and broadening the application of this technique.

Characterization of stacked-crystal PET detector designs for measurement of both TOF and DOI

PubMed Central

Schmall, Jeffrey P; Surti, Suleman; Karp, Joel S

2015-01-01

A PET detector with good timing resolution and two-level depth-of-interaction (DOI) discrimination can be constructed using a single-ended readout of scintillator stacks of Lanthanum Bromide (LaBr3), with various Cerium dopant concentrations, including pure Cerium Bromide (CeBr3). The stacked crystal geometry creates a unique signal shape for interactions occurring in each layer, which can be used to identify the DOI, while retaining the inherently good timing properties of LaBr3 and CeBr3. In this work, single pixel elements are used to optimize the choice of scintillator, coupling of layers, and type of photodetector, evaluating the performance using a fast, single-channel photomultiplier tube (PMT) and a single 4×4 mm2 silicon photomultiplier (SiPM). We also introduce a method to quantify and evaluate the DOI discrimination accuracy. From signal shape measurements using fast waveform sampling, we found that in addition to differences in signal rise times, between crystal layers, there were also differences in the signal fall times. A DOI accuracy of 98% was achieved using our classification method for a stacked crystal pair, consisting of a 15-mm long LaBr3(Ce:20%) crystal on top of a 15-mm long CeBr3 crystal, readout using a PMT. A DOI accuracy of 95% was measured with a stack of two, identical, 12-mm long, CeBr3 crystals. The DOI accuracy of this crystal pair was reduced to 91% when using a SiPM for readout. For the stack of two, 12-mm long, CeBr3 crystals, a coincidence timing resolution (average of timing results from the top and bottom layer) of 199 ps was measured using a PMT, and this was improved to 153 ps when using a SiPM. These results show that with stacked LaBr3/CeBr3 scintillators and fast waveform sampling nearly perfect DOI accuracy can be achieved with excellent timing resolution—timing resolution that is only minimally degraded compared to results from a single CeBr3 crystal of comparable length to the stacked crystals. The interface in the stacked crystal geometry itself plays a major role in creating the differences in signal shape and this can be used to construct stacked DOI detectors using the same scintillator type, thereby simplifying and broadening the application of this technique. PMID:25860172

Enabling Large Focal Plane Arrays through Mosaic Hybridization

NASA Technical Reports Server (NTRS)

Miller, Timothy M.; Jhabvala, Christine A.; Costen, Nick; Benford, Dominic J.

2012-01-01

We have demonstrated the hybridization of large mosaics of far-infrared detectors, joining separately fabricated sub-units into a single unit on a single, large substrate. We produced a single detector mockup on a 100mm diameter wafer and four mockup readout quadrant chips from a separate 100mm wafer. The individually fabricated parts were hybridized using a Suss FC150 flip chip bonder to assemble the detector-readout stack. Once all of the hybridized readouts were in place, a single, large and thick silicon substrate was placed on the stack and attached with permanent epoxy to provide strength and a Coefficient of Thermal Expansion (CTE) match to the silicon components underneath. Wirebond pads on the readout chips connect circuits to warm readout electronics; and were used to validate the successful superconducting electrical interconnection of the mockup mosaic-hybridized detector. This demonstration is directly scalable to 150 mm diameter wafers, enabling pixel areas over ten times the area currently demonstrated.

Indium Hybridization of Large Format TES Bolometer Arrays to Readout Multiplexers for Far-Infrared Astronomy

NASA Technical Reports Server (NTRS)

Miller, Timothy M.; Costen, Nick; Allen, Christine

2007-01-01

This conference poster reviews the Indium hybridization of the large format TES bolometer arrays. We are developing a key technology to enable the next generation of detectors. That is the Hybridization of Large Format Arrays using Indium bonded detector arrays containing 32x40 elements which conforms to the NIST multiplexer readout architecture of 1135 micron pitch. We have fabricated and hybridized mechanical models with the detector chips bonded after being fully back-etched. The mechanical support consists of 30 micron walls between elements Demonstrated electrical continuity for each element. The goal is to hybridize fully functional array of TES detectors to NIST readout.

Silicon Micromachined Microlens Array for THz Antennas

NASA Technical Reports Server (NTRS)

Lee, Choonsup; Chattopadhyay, Goutam; Mehdi, IImran; Gill, John J.; Jung-Kubiak, Cecile D.; Llombart, Nuria

2013-01-01

5 5 silicon microlens array was developed using a silicon micromachining technique for a silicon-based THz antenna array. The feature of the silicon micromachining technique enables one to microfabricate an unlimited number of microlens arrays at one time with good uniformity on a silicon wafer. This technique will resolve one of the key issues in building a THz camera, which is to integrate antennas in a detector array. The conventional approach of building single-pixel receivers and stacking them to form a multi-pixel receiver is not suited at THz because a single-pixel receiver already has difficulty fitting into mass, volume, and power budgets, especially in space applications. In this proposed technique, one has controllability on both diameter and curvature of a silicon microlens. First of all, the diameter of microlens depends on how thick photoresist one could coat and pattern. So far, the diameter of a 6- mm photoresist microlens with 400 m in height has been successfully microfabricated. Based on current researchers experiences, a diameter larger than 1-cm photoresist microlens array would be feasible. In order to control the curvature of the microlens, the following process variables could be used: 1. Amount of photoresist: It determines the curvature of the photoresist microlens. Since the photoresist lens is transferred onto the silicon substrate, it will directly control the curvature of the silicon microlens. 2. Etching selectivity between photoresist and silicon: The photoresist microlens is formed by thermal reflow. In order to transfer the exact photoresist curvature onto silicon, there needs to be etching selectivity of 1:1 between silicon and photoresist. However, by varying the etching selectivity, one could control the curvature of the silicon microlens. The figure shows the microfabricated silicon microlens 5 x5 array. The diameter of the microlens located in the center is about 2.5 mm. The measured 3-D profile of the microlens surface has a smooth curvature. The measured height of the silicon microlens is about 280 microns. In this case, the original height of the photoresist was 210 microns. The change was due to the etching selectivity of 1.33 between photoresist and silicon. The measured surface roughness of the silicon microlens shows the peak-to-peak surface roughness of less than 0.5 microns, which is adequate in THz frequency. For example, the surface roughness should be less than 7 microns at 600 GHz range. The SEM (scanning electron microscope) image of the microlens confirms the smooth surface. The beam pattern at 550 GHz shows good directivity.

Metallic Thin-Film Bonding and Alloy Generation

NASA Technical Reports Server (NTRS)

Peotter, Brian S. (Inventor); Fryer, Jack Merrill (Inventor); Campbell, Geoff (Inventor); Droppers, Lloyd (Inventor)

2016-01-01

Diffusion bonding a stack of aluminum thin films is particularly challenging due to a stable aluminum oxide coating that rapidly forms on the aluminum thin films when they are exposed to atmosphere and the relatively low meting temperature of aluminum. By plating the individual aluminum thin films with a metal that does not rapidly form a stable oxide coating, the individual aluminum thin films may be readily diffusion bonded together using heat and pressure. The resulting diffusion bonded structure can be an alloy of choice through the use of a carefully selected base and plating metals. The aluminum thin films may also be etched with distinct patterns that form a microfluidic fluid flow path through the stack of aluminum thin films when diffusion bonded together.

Efficient scalable solid-state neutron detector.

PubMed

Moses, Daniel

2015-06-01

We report on scalable solid-state neutron detector system that is specifically designed to yield high thermal neutron detection sensitivity. The basic detector unit in this system is made of a (6)Li foil coupled to two crystalline silicon diodes. The theoretical intrinsic efficiency of a detector-unit is 23.8% and that of detector element comprising a stack of five detector-units is 60%. Based on the measured performance of this detector-unit, the performance of a detector system comprising a planar array of detector elements, scaled to encompass effective area of 0.43 m(2), is estimated to yield the minimum absolute efficiency required of radiological portal monitors used in homeland security.

Development of a high efficiency personal/environmental radon dosimeter using polycarbonate detectors.

PubMed

Taheri, M; Jafarizadeh, M; Baradaran, S; Zainali, Gh

2006-12-01

Passive radon dosimeters, based on alpha particle etched track detectors, are widely used for the assessment of radon exposure. These methods are often applied in radon dosimetry for long periods of time. In this research work, we have developed a highly efficient method of personal/environmental radon dosimetry that is based upon the detection of alpha particles from radon daughters, (218)Po and (214)Po, using a polycarbonate detector (PC). The radon daughters are collected on the filter surface by passing a fixed flow of air through it and the PC detector, placed at a specified distance from the filter, is simultaneously exposed to alpha particles. After exposure, the latent tracks on the detector are made to appear by means of an electrochemical etching process; these are proportional to the radon dose. The air flow rate and the detector-filter distance are the major factors that can affect the performance of the dosimeter. The results obtained in our experimental investigations have shown that a distance of 1.5 cm between the detector and the filter, an absorber layer of Al with a thickness of 12 microm and an air flow rate of 4 l min(-1) offer the best design parameters for a high efficiency radon dosimeter. Then, the designed dosimeter was calibrated against different values of radon exposures and the obtained sensitivity was found to be 2.1 (tracks cm(-2)) (kBq h m(-3))(-1). The most important advantages of this method are that it is reliable, fast and convenient when used for radon dose assessment. In this paper, the optimized parameters of the dosimeter structure and its calibration procedure are presented and discussed.

Micro-Slit Collimators for X-Ray/Gamma-Ray Imaging

NASA Technical Reports Server (NTRS)

Appleby, Michael; Fraser, Iain; Klinger, Jill

2011-01-01

A hybrid photochemical-machining process is coupled with precision stack lamination to allow for the fabrication of multiple ultra-high-resolution grids on a single array substrate. In addition, special fixturing and etching techniques have been developed that allow higher-resolution multi-grid collimators to be fabricated. Building on past work of developing a manufacturing technique for fabricating multi-grid, high-resolution coating modulation collimators for arcsecond and subarcsecond x-ray and gamma-ray imaging, the current work reduces the grid pitch by almost a factor of two, down to 22 microns. Additionally, a process was developed for reducing thin, high-Z (tungsten or molybdenum) from the thinnest commercially available foil (25 microns thick) down to approximately equal to 10 microns thick using precisely controlled chemical etching

Surface Treatment And Protection Method For Cadium Zinc Telluride Crystals

DOEpatents

Wright, Gomez W.; James, Ralph B.; Burger, Arnold; Chinn, Douglas A.

2006-02-21

A method for treatment of the surface of a CdZnTe (CZT) crystal that provides a native dielectric coating to reduce surface leakage currents and thereby, improve the resolution of instruments incorporating detectors using CZT crystals. A two step process is disclosed, etching the surface of a CZT crystal with a solution of the conventional bromine/methanol etch treatment, and after attachment of electrical contacts, passivating the CZT crystal surface with a solution of 10 w/o NH4F and 10 w/o H2O2 in water.

Research on anisotropy of fusion-produced protons and neutrons emission from high-current plasma-focus discharges.

PubMed

Malinowski, K; Skladnik-Sadowska, E; Sadowski, M J; Szydlowski, A; Czaus, K; Kwiatkowski, R; Zaloga, D; Paduch, M; Zielinska, E

2015-01-01

The paper concerns fast protons and neutrons from D-D fusion reactions in a Plasma-Focus-1000U facility. Measurements were performed with nuclear-track detectors arranged in "sandwiches" of an Al-foil and two PM-355 detectors separated by a polyethylene-plate. The Al-foil eliminated all primary deuterons, but was penetrable for fast fusion protons. The foil and first PM-355 detector were penetrable for fast neutrons, which were converted into recoil-protons in the polyethylene and recorded in the second PM-355 detector. The "sandwiches" were irradiated by discharges of comparable neutron-yields. Analyses of etched tracks and computer simulations of the fusion-products behavior in the detectors were performed.

Research on anisotropy of fusion-produced protons and neutrons emission from high-current plasma-focus discharges

DOE Office of Scientific and Technical Information (OSTI.GOV)

Malinowski, K., E-mail: karol.malinowski@ncbj.gov.pl; Sadowski, M. J.; Szydlowski, A.

2015-01-15

The paper concerns fast protons and neutrons from D-D fusion reactions in a Plasma-Focus-1000U facility. Measurements were performed with nuclear-track detectors arranged in “sandwiches” of an Al-foil and two PM-355 detectors separated by a polyethylene-plate. The Al-foil eliminated all primary deuterons, but was penetrable for fast fusion protons. The foil and first PM-355 detector were penetrable for fast neutrons, which were converted into recoil-protons in the polyethylene and recorded in the second PM-355 detector. The “sandwiches” were irradiated by discharges of comparable neutron-yields. Analyses of etched tracks and computer simulations of the fusion-products behavior in the detectors were performed.

Spin-on metal oxide materials with high etch selectivity and wet strippability

NASA Astrophysics Data System (ADS)

Yao, Huirong; Mullen, Salem; Wolfer, Elizabeth; McKenzie, Douglas; Rahman, Dalil; Cho, JoonYeon; Padmanaban, Munirathna; Petermann, Claire; Hong, SungEun; Her, YoungJun

2016-03-01

Metal oxide or metal nitride films are used as hard mask materials in semiconductor industry for patterning purposes due to their excellent etch resistances against the plasma etches. Chemical vapor deposition (CVD) or atomic layer deposition (ALD) techniques are usually used to deposit the metal containing materials on substrates or underlying films, which uses specialized equipment and can lead to high cost-of-ownership and low throughput. We have reported novel spin-on coatings that provide simple and cost effective method to generate metal oxide films possessing good etch selectivity and can be removed by chemical agents. In this paper, new spin-on Al oxide and Zr oxide hard mask formulations are reported. The new metal oxide formulations provide higher metal content compared to previously reported material of specific metal oxides under similar processing conditions. These metal oxide films demonstrate ultra-high etch selectivity and good pattern transfer capability. The cured films can be removed by various chemical agents such as developer, solvents or wet etchants/strippers commonly used in the fab environment. With high metal MHM material as an underlayer, the pattern transfer process is simplified by reducing the number of layers in the stack and the size of the nano structure is minimized by replacement of a thicker film ACL. Therefore, these novel AZ® spinon metal oxide hard mask materials can potentially be used to replace any CVD or ALD metal, metal oxide, metal nitride or spin-on silicon-containing hard mask films in 193 nm or EUV process.

Three-dimensional collimation of in-plane-propagating light using silicon micromachined mirror

NASA Astrophysics Data System (ADS)

Sabry, Yasser M.; Khalil, Diaa; Saadany, Bassam; Bourouina, Tarik

2014-03-01

We demonstrate light collimation of single-mode optical fibers using deeply-etched three-dimensional curved micromirror on silicon chip. The three-dimensional curvature of the mirror is controlled by a process combining deep reactive ion etching and isotropic etching of silicon. The produced surface is astigmatic with out-of-plane radius of curvature that is about one half the in-plane radius of curvature. Having a 300-μm in-plane radius and incident beam inplane inclined with an angle of 45 degrees with respect to the principal axis, the reflected beam is maintained stigmatic with about 4.25 times reduction in the beam expansion angle in free space and about 12-dB reduction in propagation losses, when received by a limited-aperture detector.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Acciarri, R.; Adams, C.; An, R.

The MicroBooNE detector is a liquid argon time projection chamber at Fermilab designed to study short-baseline neutrino oscillations and neutrino-argon interaction cross-section. Due to its location near the surface, a good understanding of cosmic muons as a source of backgrounds is of fundamental importance for the experiment. We present a method of using an external 0.5 m (L) x 0.5 m (W) muon counter stack, installed above the main detector, to determine the cosmic-ray reconstruction efficiency in MicroBooNE. Data are acquired with this external muon counter stack placed in three different positions, corresponding to cosmic rays intersecting different parts of the detector. The data reconstruction efficiency of tracks in the detector is found to bemore » $$\\epsilon_{\\mathrm{data}}=(97.1\\pm0.1~(\\mathrm{stat}) \\pm 1.4~(\\mathrm{sys}))\\%$$, in good agreement with the Monte Carlo reconstruction efficiency $$\\epsilon_{\\mathrm{MC}} = (97.4\\pm0.1)\\%$$. This analysis represents a small-scale demonstration of the method that can be used with future data coming from a recently installed cosmic-ray tagger system, which will be able to tag $$\\approx80\\%$$ of the cosmic rays passing through the MicroBooNE detector.« less

Performance Testing of Tracer Gas and Tracer Aerosol Detectors for use in Radionuclide NESHAP Compliance Testing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fuehne, David Patrick; Lattin, Rebecca Renee

The Rad-NESHAP program, part of the Air Quality Compliance team of LANL’s Compliance Programs group (EPC-CP), and the Radiation Instrumentation & Calibration team, part of the Radiation Protection Services group (RP-SVS), frequently partner on issues relating to characterizing air flow streams. This memo documents the most recent example of this partnership, involving performance testing of sulfur hexafluoride detectors for use in stack gas mixing tests. Additionally, members of the Rad-NESHAP program performed a functional trending test on a pair of optical particle counters, comparing results from a non-calibrated instrument to a calibrated instrument. Prior to commissioning a new stack samplingmore » system, the ANSI Standard for stack sampling requires that the stack sample location must meet several criteria, including uniformity of tracer gas and aerosol mixing in the air stream. For these mix tests, tracer media (sulfur hexafluoride gas or liquid oil aerosol particles) are injected into the stack air stream and the resulting air concentrations are measured across the plane of the stack at the proposed sampling location. The coefficient of variation of these media concentrations must be under 20% when evaluated over the central 2/3 area of the stack or duct. The instruments which measure these air concentrations must be tested prior to the stack tests in order to ensure their linear response to varying air concentrations of either tracer gas or tracer aerosol. The instruments used in tracer gas and aerosol mix testing cannot be calibrated by the LANL Standards and Calibration Laboratory, so they would normally be sent off-site for factory calibration by the vendor. Operational requirements can prevent formal factory calibration of some instruments after they have been used in hazardous settings, e.g., within a radiological facility with potential airborne contamination. The performance tests described in this document are intended to demonstrate the reliable performance of the test instruments for the specific tests used in stack flow characterization.« less

193-nm multilayer imaging systems

NASA Astrophysics Data System (ADS)

Meador, James D.; Holmes, Doug; DiMenna, William; Nagatkina, Mariya I.; Rich, Michael D.; Flaim, Tony D.; Bennett, Randy; Kobayashi, Ichiro

2003-06-01

This paper highlights the performance of new materials that have been developed for use in 193-nm trilayer microlithography. The products are embedded etch masking layers (EMLs) and bottom antireflective coatings (BARCs). Both coatings are spin applied from organic solvent(s) and then thermoset during a hot plate bake. The EMLs (middle layers) are imaging compatible with JSR, Sumitomo, and TOK 193-nm photoresists. Best-case trilayer film stacks have given 100-nm dense and semi-dense L/S. Plasma etching, selectivities and solution compatibility performance of the EMLs meet or exceed proposed product targets. In addition, the EMLs exhibit both solution and plasma etching properties that should lead to successful rework processes for photoresists. The multiplayer BARCs offer good thick film coating quality and contribute to excellent images when used in trilayer applications. Combining the EMLs, which are nearly optically transparent (k=0.04) at 193-nm, with the new trilayer BARCs results in outstanding Prolith simulated reflectance control. In one modeling example, reflectance is a flat line at 0.5% on five different substrates for BARC thicknesses between 300 and 700-nm.

Silicon Alignment Pins: An Easy Way to Realize a Wafer-to-Wafer Alignment

NASA Technical Reports Server (NTRS)

Jung-Kubiak, Cecile; Reck, Theodore J.; Lin, Robert H.; Peralta, Alejandro; Gill, John J.; Lee, Choonsup; Siles, Jose; Toda, Risaku; Chattopadhyay, Goutam; Cooper, Ken B.;

On charged particle tracks in cellulose nitrate and Lexan

NASA Technical Reports Server (NTRS)

Benton, E. V.; Henke, R. P.

1972-01-01

Investigations were performed aimed at developing plastic nuclear track detectors into quantitative tools for recording and measuring multicharged, heavy particles. Accurate track etch rate measurements as a function of LET were performed for cellulose nitrate and Lexan plastic detectors. This was done using a variety of incident charged particle types and energies. The effect of aging of latent tracks in Lexan in different gaseous atmospheres was investigated. Range distributions of high energy N-14 particle bevatron beams in nuclear emulsion were measured. Investigation of charge resolution and Bragg peak measurements were carried out using plastic nuclear track detectors.

Design and fabrication of two-dimensional semiconducting bolometer arrays for HAWC and SHARC-II

NASA Astrophysics Data System (ADS)

Voellmer, George M.; Allen, Christine A.; Amato, Michael J.; Babu, Sachidananda R.; Bartels, Arlin E.; Benford, Dominic J.; Derro, Rebecca J.; Dowell, C. D.; Harper, D. A.; Jhabvala, Murzy D.; Moseley, S. H.; Rennick, Timothy; Shirron, Peter J.; Smith, W. W.; Staguhn, Johannes G.

2003-02-01

The High resolution Airborne Wideband Camera (HAWC) and the Submillimeter High Angular Resolution Camera II (SHARC II) will use almost identical versions of an ion-implanted silicon bolometer array developed at the National Aeronautics and Space Administration's Goddard Space Flight Center (GSFC). The GSFC "Pop-Up" Detectors (PUD's) use a unique folding technique to enable a 12 × 32-element close-packed array of bolometers with a filling factor greater than 95 percent. A kinematic Kevlar suspension system isolates the 200 mK bolometers from the helium bath temperature, and GSFC - developed silicon bridge chips make electrical connection to the bolometers, while maintaining thermal isolation. The JFET preamps operate at 120 K. Providing good thermal heat sinking for these, and keeping their conduction and radiation from reaching the nearby bolometers, is one of the principal design challenges encountered. Another interesting challenge is the preparation of the silicon bolometers. They are manufactured in 32-element, planar rows using Micro Electro Mechanical Systems (MEMS) semiconductor etching techniques, and then cut and folded onto a ceramic bar. Optical alignment using specialized jigs ensures their uniformity and correct placement. The rows are then stacked to create the 12 × 32-element array. Engineering results from the first light run of SHARC II at the Caltech Submillimeter Observatory (CSO) are presented.

Method for producing thin sheets of proton-sensitive CR-39 plastic track detectors

NASA Technical Reports Server (NTRS)

Kinoshita, K.

1980-01-01

Procedures for fabricating large sheets of CR-39 with uniform chemical reactivity and sensitivity and which retain a clear, smooth surface after prolonged etching were investigated. Very thin sheets for certain Spacelab applications were fabricated.

Filters for Submillimeter Electromagnetic Waves

NASA Technical Reports Server (NTRS)

Berdahl, C. M.

1986-01-01

New manufacturing process produces filters strong, yet have small, precise dimensions and smooth surface finish essential for dichroic filtering at submillimeter wavelengths. Many filters, each one essentially wafer containing fine metal grid made at same time. Stacked square wires plated, fused, and etched to form arrays of holes. Grid of nickel and tin held in brass ring. Wall thickness, thickness of filter (hole depth) and lateral hole dimensions all depend upon operating frequency and filter characteristics.

Integrated Printed Circuit Board (PCB) Active Cooling With Piezoelectric Actuator

DTIC Science & Technology

2012-09-01

The cooler substrate is a laminated multilayer FR-4 substrate. Individual layers are patterned to support the active element, form a resonant...prepreg epoxy. Individual FR-4 lamina were mechanically machined to pattern each layer. The layers were aligned, stacked, and laminated to form the... laminated with 70/30 copper-nickel alloy or 80/20 nickel-chrome alloy and patterned by means of photolithographic techniques and wet etching in a ferric

Unipolar Barrier Dual-Band Infrared Detectors

NASA Technical Reports Server (NTRS)

Ting, David Z. (Inventor); Soibel, Alexander (Inventor); Khoshakhlagh, Arezou (Inventor); Gunapala, Sarath (Inventor)

2017-01-01

Dual-band barrier infrared detectors having structures configured to reduce spectral crosstalk between spectral bands and/or enhance quantum efficiency, and methods of their manufacture are provided. In particular, dual-band device structures are provided for constructing high-performance barrier infrared detectors having reduced crosstalk and/or enhance quantum efficiency using novel multi-segmented absorber regions. The novel absorber regions may comprise both p-type and n-type absorber sections. Utilizing such multi-segmented absorbers it is possible to construct any suitable barrier infrared detector having reduced crosstalk, including npBPN, nBPN, pBPN, npBN, npBP, pBN and nBP structures. The pBPN and pBN detector structures have high quantum efficiency and suppresses dark current, but has a smaller etch depth than conventional detectors and does not require a thick bottom contact layer.

Automated scanning of plastic nuclear track detectors using the Minnesota star scanner

NASA Technical Reports Server (NTRS)

Fink, P. J.; Waddington, C. J.

1986-01-01

The problems found in an attempt to adapt an automated scanner of astronomical plates, the Minnesota Automated Dual Plate Scanner (APS), to locating and measuring the etch pits produced by ionizing particles in plastic nuclear track detectors (CR-39) are described. A visual study of these pits was made to determine the errors introduced in determining positions and shapes. Measurements made under a low power microscope were compared with those from the APS.

Impact of x-ray dose on track formation and data analysis for CR-39-based proton diagnostics

NASA Astrophysics Data System (ADS)

Rinderknecht, H. G.; Rojas-Herrera, J.; Zylstra, A. B.; Frenje, J. A.; Gatu Johnson, M.; Sio, H.; Sinenian, N.; Rosenberg, M. J.; Li, C. K.; Séguin, F. H.; Petrasso, R. D.; Filkins, T.; Steidle, Jeffrey A.; Steidle, Jessica A.; Traynor, N.; Freeman, C.

2015-12-01

The nuclear track detector CR-39 is used extensively for charged particle diagnosis, in particular proton spectroscopy, at inertial confinement fusion facilities. These detectors can absorb x-ray doses from the experiments in the order of 1-100 Gy, the effects of which are not accounted for in the previous detector calibrations. X-ray dose absorbed in the CR-39 has previously been shown to affect the track size of alpha particles in the detector, primarily due to a measured reduction in the material bulk etch rate [Rojas-Herrera et al., Rev. Sci. Instrum. 86, 033501 (2015)]. Similar to the previous findings for alpha particles, protons with energies in the range 0.5-9.1 MeV are shown to produce tracks that are systematically smaller as a function of the absorbed x-ray dose in the CR-39. The reduction of track size due to x-ray dose is found to diminish with time between exposure and etching if the CR-39 is stored at ambient temperature, and complete recovery is observed after two weeks. The impact of this effect on the analysis of data from existing CR-39-based proton diagnostics on OMEGA and the National Ignition Facility is evaluated and best practices are proposed for cases in which the effect of x rays is significant.

Impact of x-ray dose on track formation and data analysis for CR-39-based proton diagnostics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rinderknecht, H. G.; Rojas-Herrera, J.; Zylstra, A. B.

The nuclear track detector CR-39 is used extensively for charged particle diagnosis, in particular proton spectroscopy, at inertial confinement fusion facilities. These detectors can absorb x-ray doses from the experiments in the order of 1–100 Gy, the effects of which are not accounted for in the previous detector calibrations. X-ray dose absorbed in the CR-39 has previously been shown to affect the track size of alpha particles in the detector, primarily due to a measured reduction in the material bulk etch rate [Rojas-Herrera et al., Rev. Sci. Instrum. 86, 033501 (2015)]. Similar to the previous findings for alpha particles, protonsmore » with energies in the range 0.5–9.1 MeV are shown to produce tracks that are systematically smaller as a function of the absorbed x-ray dose in the CR-39. The reduction of track size due to x-ray dose is found to diminish with time between exposure and etching if the CR-39 is stored at ambient temperature, and complete recovery is observed after two weeks. Furthermore, the impact of this effect on the analysis of data from existing CR-39-based proton diagnostics on OMEGA and the National Ignition Facility is evaluated and best practices are proposed for cases in which the effect of x rays is significant.« less

Impact of x-ray dose on track formation and data analysis for CR-39-based proton diagnostics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rinderknecht, H. G., E-mail: rinderknecht1@llnl.gov; Rojas-Herrera, J.; Zylstra, A. B.

The nuclear track detector CR-39 is used extensively for charged particle diagnosis, in particular proton spectroscopy, at inertial confinement fusion facilities. These detectors can absorb x-ray doses from the experiments in the order of 1–100 Gy, the effects of which are not accounted for in the previous detector calibrations. X-ray dose absorbed in the CR-39 has previously been shown to affect the track size of alpha particles in the detector, primarily due to a measured reduction in the material bulk etch rate [Rojas-Herrera et al., Rev. Sci. Instrum. 86, 033501 (2015)]. Similar to the previous findings for alpha particles, protonsmore » with energies in the range 0.5–9.1 MeV are shown to produce tracks that are systematically smaller as a function of the absorbed x-ray dose in the CR-39. The reduction of track size due to x-ray dose is found to diminish with time between exposure and etching if the CR-39 is stored at ambient temperature, and complete recovery is observed after two weeks. The impact of this effect on the analysis of data from existing CR-39-based proton diagnostics on OMEGA and the National Ignition Facility is evaluated and best practices are proposed for cases in which the effect of x rays is significant.« less

Impact of x-ray dose on track formation and data analysis for CR-39-based proton diagnostics

DOE PAGES

Rinderknecht, H. G.; Rojas-Herrera, J.; Zylstra, A. B.; ...

2015-12-23

The nuclear track detector CR-39 is used extensively for charged particle diagnosis, in particular proton spectroscopy, at inertial confinement fusion facilities. These detectors can absorb x-ray doses from the experiments in the order of 1–100 Gy, the effects of which are not accounted for in the previous detector calibrations. X-ray dose absorbed in the CR-39 has previously been shown to affect the track size of alpha particles in the detector, primarily due to a measured reduction in the material bulk etch rate [Rojas-Herrera et al., Rev. Sci. Instrum. 86, 033501 (2015)]. Similar to the previous findings for alpha particles, protonsmore » with energies in the range 0.5–9.1 MeV are shown to produce tracks that are systematically smaller as a function of the absorbed x-ray dose in the CR-39. The reduction of track size due to x-ray dose is found to diminish with time between exposure and etching if the CR-39 is stored at ambient temperature, and complete recovery is observed after two weeks. Furthermore, the impact of this effect on the analysis of data from existing CR-39-based proton diagnostics on OMEGA and the National Ignition Facility is evaluated and best practices are proposed for cases in which the effect of x rays is significant.« less

Source abundances of ultra heavy elements derived from UHCRE measurements.

PubMed

Domingo, C; Font, J; Baixeras, C; Fernandez, F

1996-11-01

A total of 205 tracks have been located, measured, and positively identified as originating from Ultra Heavy (Z > or = 65) cosmic ray ions with energies over 2 GeV/amu in the 10 UHCRE plastic track detector (mainly Lexan polycarbonate) stacks studied by our Group. About 40 values of reduced etch rate S have been obtained along each of these tracks. A method based on determining the gradient of S, together with calibration in accelerators, is used to determine the charge of each ion resulting in one of such tracks to obtain the charge spectrum of the recorded Ultra Heavy ions. The abundance ratio of ions with 87 < or = Z < or = 100 to those with 74 < or = Z < or = 86 as well as that of ions with 81 < or = Z < or = 86 to those with 74 < or = Z < or = 80 are calculated at 0.016 and 0.32, respectively, which agree with the values obtained from measurements in the HEAO-3 and Ariel-6 experiments. The abundance ratio of ions with 70 < or = Z < or = 73 to those with 74 < or = Z < or = 86 is also calculated, but its value (0.074) did not seem to be significant because of our detectors' low registration efficiency in the charge range 70 < or = Z < or = 73. A computer program developed by our Group, based on the Leaky Box cosmic ray propagation model, has been used to determine the source abundances of cosmic ray nuclei with Z > or = 65 inferred from the abundances measured in the UHCRE. It appeared that r-process synthesized elements were overabundant compared to the Solar System abundances, as predicted by other authors.

On the Role of Boron in CdTe and CdZnTe Crystals

NASA Astrophysics Data System (ADS)

Pavesi, M.; Marchini, L.; Zha, M.; Zappettini, A.; Zanichelli, M.; Manfredi, M.

2011-10-01

It is well known that group III elements act as donors if they play a substitutional role at the metallic site in II-tellurides; nevertheless, several studies report both on the creation of complexes with vacancies, named A-centers, and on the involvement in self-compensation mechanisms, especially for indium. The boron concentration in II-tellurides is negligible, and its contribution to transport mechanisms has not been studied yet. For the last few years the authors have been developing a new technique to grow CdZnTe by the vertical Bridgman technique, taking advantage of encapsulation by means of boron oxide. In this way, crystals characterized by large single grains, low etch pit density, and high resistivity have been obtained. Recently, x-ray detectors with state-of-the-art performance have been produced from such crystals. Boron contamination, as a consequence of this growth method, is quite low but at least one order of magnitude above values obtained with other growth techniques. Besides being a low-cost technique which is also suitable for large-scale mass production, the encapsulated vertical Bridgman technique is quite useful to prevent dislocations, grain boundaries, and stacking faults; for these reasons, careful characterization was performed to understand the effect of boron both on the electrical properties and on the spectroscopic performance of the final crystals. Our characterization is mainly based on low-temperature photoluminescence in addition to electrical current-voltage measurements, photostimulated current, and x-ray spectroscopy. The results indicate that boron behaves like other group III elements; in fact, boron forms a complex that does not affect the good performance of our x-ray detectors, even if it shows some properties which are typical of A-centers.

A preliminary study of a miniature planar 6-cell PEMFC stack combined with a small hydrogen storage canister

NASA Astrophysics Data System (ADS)

Zhang, Xigui; Zheng, Dan; Wang, Tao; Chen, Cong; Cao, Jianyu; Yan, Jian; Wang, Wenming; Liu, Juanying; Liu, Haohan; Tian, Juan; Li, Xinxin; Yang, Hui; Xia, Baojia

The fabrication and performance evaluation of a miniature 6-cell PEMFC stack based on Micro-Electronic-Mechanical-System (MEMS) technology is presented in this paper. The stack with a planar configuration consists of 6-cells in serial interconnection by spot welding one cell anode with another cell cathode. Each cell was made by sandwiching a membrane-electrode-assembly (MEA) between two flow field plates fabricated by a classical MEMS wet etching method using silicon wafer as the original material. The plates were made electrically conductive by sputtering a Ti/Pt/Au composite metal layer on their surfaces. The 6-cells lie in the same plane with a fuel buffer/distributor as their support, which was fabricated by the MEMS silicon-glass bonding technology. A small hydrogen storage canister was used as fuel source. Operating on dry H 2 at a 40 ml min -1 flow rate and air-breathing conditions at room temperature and atmospheric pressure, the linear polarization experiment gave a measured peak power of 0.9 W at 250 mA cm -2 for the stack and average power density of 104 mW cm -2 for each cell. The results suggested that the stack has reasonable performance benefiting from an even fuel supply. But its performance tended to deteriorate with power increase, which became obvious at 600 mW. This suggests that the stack may need some power assistance, from say supercapacitors to maintain its stability when operated at higher power.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Yu; School of Mechanical and Electrical Engineering, Wuhan Institute of Technology, Wuhan 430073; Guo, Zhiguang, E-mail: zguo@licp.cas.cn

Graphical abstract: A double-metal-assisted chemical etching method is employed to fabricate superhydrophobic surfaces, showing a good superhydrophobicity with the contact angle of about 170°, and the sliding angle of about 0°. Meanwhile, the potential formation mechanism about it is also presented. Highlights: ► A double-metal-assisted chemical etching method is employed to fabricate superhydrophobic surfaces. ► The obtained surfaces show good superhydrophobicity with a high contact angle and low sliding angle. ► The color of the etched substrate dark brown or black and it is so-called black silicon. -- Abstract: Silicon substrates treated by metal-assisted chemical etching have been studied formore » many years since they could be employed in a variety of electronic and optical devices such as integrated circuits, photovoltaics, sensors and detectors. However, to the best of our knowledge, the chemical etching treatment on the same silicon substrate with the assistance of two or more kinds of metals has not been reported. In this paper, we mainly focus on the etching time and finally obtain a series of superhydrophobic silicon surfaces with novel etching structures through two successive etching processes of Cu-assisted and Ag-assisted chemical etching. It is shown that large-scale homogeneous but locally irregular wire-like structures are obtained, and the superhydrophobic surfaces with low hysteresis are prepared after the modifications with low surface energy materials. It is worth noting that the final silicon substrates not only possess high static contact angle and low hysteresis angle, but also show a black color, indicating that the superhydrophobic silicon substrate has an extremely low reflectance in a certain range of wavelengths. In our future work, we will go a step further to discuss the effect of temperature, the size of Cu nanoparticles and solution concentration on the final topography and superhydrophobicity.« less

Hot Stuff.

ERIC Educational Resources Information Center

Patterson, Kristin

1996-01-01

Property theft at schools is a problem districts are having to confront. Deterrents include inventory checks and etching equipment with inventory control numbers. In Washington, D.C., officials are installing high-security equipment such as closed-circuit television, fiber-optics lines to secure computers, and motion detectors. (MLF)

Rigid thin windows for vacuum applications

DOEpatents

Meyer, Glenn Allyn; Ciarlo, Dino R.; Myers, Booth Richard; Chen, Hao-Lin; Wakalopulos, George

1999-01-01

A thin window that stands off atmospheric pressure is fabricated using photolithographic and wet chemical etching techniques and comprises at least two layers: an etch stop layer and a protective barrier layer. The window structure also comprises a series of support ribs running the width of the window. The windows are typically made of boron-doped silicon and silicon nitride and are useful in instruments such as electron beam guns and x-ray detectors. In an electron beam gun, the window does not impede the electrons and has demonstrated outstanding gun performance and survivability during the gun tube manufacturing process.

Surface treatment and protection method for cadmium zinc telluride crystals

DOEpatents

Wright, Gomez W.; James, Ralph B.; Burger, Arnold; Chinn, Douglas A.

2003-01-01

A method for treatment of the surface of a CdZnTe (CZT) crystal that provides a native dielectric coating to reduce surface leakage currents and thereby, improve the resolution of instruments incorporating detectors using CZT crystals. A two step process is disclosed, etching the surface of a CZT crystal with a solution of the conventional bromine/methanol etch treatment, and after attachment of electrical contacts, passivating the CZT crystal surface with a solution of 10 w/o NH.sub.4 F and 10 w/o H.sub.2 O.sub.2 in water.

Development of a Compton camera for medical applications based on silicon strip and scintillation detectors

NASA Astrophysics Data System (ADS)

Krimmer, J.; Ley, J.-L.; Abellan, C.; Cachemiche, J.-P.; Caponetto, L.; Chen, X.; Dahoumane, M.; Dauvergne, D.; Freud, N.; Joly, B.; Lambert, D.; Lestand, L.; Létang, J. M.; Magne, M.; Mathez, H.; Maxim, V.; Montarou, G.; Morel, C.; Pinto, M.; Ray, C.; Reithinger, V.; Testa, E.; Zoccarato, Y.

2015-07-01

A Compton camera is being developed for the purpose of ion-range monitoring during hadrontherapy via the detection of prompt-gamma rays. The system consists of a scintillating fiber beam tagging hodoscope, a stack of double sided silicon strip detectors (90×90×2 mm3, 2×64 strips) as scatter detectors, as well as bismuth germanate (BGO) scintillation detectors (38×35×30 mm3, 100 blocks) as absorbers. The individual components will be described, together with the status of their characterization.

Optical properties of Argonne/KICP TES bolometers for CMB polarimetry.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Crites, A. T.; Bleem, L. E.; Carlstrom, J. E.

2009-01-01

We present optical data on prototype polarization sensitive Argonne/KICP detectors fabricated at Argonne National Labs which are designed to be installed on the South Pole Telescope and used to measure the polarization of the Cosmic Microwave Background radiation. The detectors are Mo/Au transition edge sensors (TES) suspended on silicon nitride, with radiation coupled to the TES using a gold bar absorber. Two stacked detectors with bars in orthogonal directions will be used to measure both polarizations. We discuss measurements of the optical bandpass, time constants and cross-polarization of the detectors.

Optical Properties of Argonne/KICP TES Bolometers for CMB Polarimetry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Crites, A. T.; Bleem, L. E.; Carlstrom, J. E.

2009-12-16

We present optical data on prototype polarization sensitive Argonne/KICP detectors fabricated at Argonne National Labs which are designed to be installed on the South Pole Telescope and used to measure the polarization of the Cosmic Microwave Background radiation. The detectors are Mo/Au transition edge sensors (TES) suspended on silicon nitride, with radiation coupled to the TES using a gold bar absorber. Two stacked detectors with bars in orthogonal directions will be used to measure both polarizations. We discuss measurements of the optical bandpass, time constants and cross-polarization of the detectors.

Xe- and U-tracks in apatite and muscovite near the etching threshold

NASA Astrophysics Data System (ADS)

Wauschkuhn, Bastian; Jonckheere, Raymond; Ratschbacher, Lothar

2015-01-01

Ion irradiation of a wedge-shaped Durango apatite backed by a mica detector allows investigating ion track ranges and etching properties at different points along the tracks. Transmission profiles obtained by irradiation with 2 × 106 cm-2 11.1 MeV/amu 132Xe and 2 × 106 cm-2 11.1 MeV/amu 238U parallel to the apatite c-axis correspond to ranges calculated with SRIM (Xe: 76.3 μm; U: 81.1 μm). However, the measured profiles show much greater etchable track-length variations than the calculated longitudinal straggles. The probable cause is that the length deficit exhibits significant variation from track to track. The measured length deficit in muscovite is in agreement with most existing data. In contrast, the length deficit in apatite appears to be close to zero, which is in conflict with all earlier estimates. This probably results from the etching properties of the apatite basal face, which permit surface-assisted sub-threshold etching of track sections in the nuclear stopping regime. These sections are not accessible from the opposite direction, i.e. by etching towards the endpoint of the tracks or in the direction of the ion beam. This conclusion is supported by the fact that linear dislocations are revealed in apatite basal faces and by the observation of imperfect etch pits that are separated from the etched ion track channel by a section that appears unetched under the microscope.

Fabrication of an Absorber-Coupled MKID Detector

NASA Technical Reports Server (NTRS)

Brown, Ari; Hsieh, Wen-Ting; Moseley, Samuel; Stevenson, Thomas; U-Yen, Kongpop; Wollack, Edward

2012-01-01

Absorber-coupled microwave kinetic inductance detector (MKID) arrays were developed for submillimeter and far-infrared astronomy. These sensors comprise arrays of lambda/2 stepped microwave impedance resonators patterned on a 1.5-mm-thick silicon membrane, which is optimized for optical coupling. The detector elements are supported on a 380-mm-thick micro-machined silicon wafer. The resonators consist of parallel plate aluminum transmission lines coupled to low-impedance Nb microstrip traces of variable length, which set the resonant frequency of each resonator. This allows for multiplexed microwave readout and, consequently, good spatial discrimination between pixels in the array. The transmission lines simultaneously act to absorb optical power and employ an appropriate surface impedance and effective filling fraction. The fabrication techniques demonstrate high-fabrication yield of MKID arrays on large, single-crystal membranes and sub-micron front-to-back alignment of the micro strip circuit. An MKID is a detector that operates upon the principle that a superconducting material s kinetic inductance and surface resistance will change in response to being exposed to radiation with a power density sufficient to break its Cooper pairs. When integrated as part of a resonant circuit, the change in surface impedance will result in a shift in its resonance frequency and a decrease of its quality factor. In this approach, incident power creates quasiparticles inside a superconducting resonator, which is configured to match the impedance of free space in order to absorb the radiation being detected. For this reason MKIDs are attractive for use in large-format focal plane arrays, because they are easily multiplexed in the frequency domain and their fabrication is straightforward. The fabrication process can be summarized in seven steps: (1) Alignment marks are lithographically patterned and etched all the way through a silicon on insulator (SOI) wafer, which consists of a thin silicon membrane bonded to a thick silicon handle wafer. (2) The metal microwave circuitry on the front of the membrane is patterned and etched. (3) The wafer is then temporarily bonded with wafer wax to a Pyrex wafer, with the SOI side abutting the Pyrex. (4) The silicon handle component of the SOI wafer is subsequently etched away so as to expose the membrane backside. (5) The wafer is flipped over, and metal microwave circuitry is patterned and etched on the membrane backside. Furthermore, cuts in the membrane are made so as to define the individual detector array chips. (6) Silicon frames are micromachined and glued to the silicon membrane. (7) The membranes, which are now attached to the frames, are released from the Pyrex wafer via dissolution of the wafer wax in acetone.

A novel transparent charged particle detector for the CPET upgrade at TITAN

NASA Astrophysics Data System (ADS)

Lascar, D.; Kootte, B.; Barquest, B. R.; Chowdhury, U.; Gallant, A. T.; Good, M.; Klawitter, R.; Leistenschneider, E.; Andreoiu, C.; Dilling, J.; Even, J.; Gwinner, G.; Kwiatkowski, A. A.; Leach, K. G.

2017-10-01

The detection of an electron bunch exiting a strong magnetic field can prove challenging due to the small mass of the electron. If placed too far from a solenoid's entrance, a detector outside the magnetic field will be too small to reliably intersect with the exiting electron beam because the light electrons will follow the diverging magnetic field outside the solenoid. The TITAN group at TRIUMF in Vancouver, Canada, has made use of advances in the practice and precision of photochemical machining (PCM) to create a new kind of charge collecting detector called the "mesh detector." The TITAN mesh detector was used to solve the problem of trapped electron detection in the new Cooler PEnning Trap (CPET) currently under development at TITAN. This thin array of wires etched out of a copper plate is a novel, low profile, charge agnostic detector that can be made effectively transparent or opaque at the user's discretion.

Lifetime Extension of the Gas Discharge Detectors with Plasma Etching of Silicon Deposits in 80%CF4 + 20%CO2

NASA Astrophysics Data System (ADS)

Gavrilov, G. E.; Vakhtel, V. M.; Maysuzenko, D. A.; Tavtorkina, T. A.; Fetisov, A. A.; Shvetsova, N. Yu.

2017-12-01

A method of elimination of silicon compounds from the anode wire of an aged proportional counter is presented. The aging of a counter with a 70%Ar + 30%CO2 and a 60%Ar + 30%CO2 + 10%CF4 working mixture was stimulated by a 90Sr β source. To accelerate the process of aging, the gas mixture flow to the counter was supplied through a pipe with RTV coated wall. As a result, the amplitude of the signal decreased 70% already at accumulated charge of Q = 0.03 C/cm. The etching of the silicon compounds on the wire surface with an 80%CF4 + 20%CO2 gas mixture discharge led to full recovery of the operating characteristics of detector and an increase in the lifetime. A scanning electron microscopy and X-ray spectroscopy analysis of the recovered wire surface were performed. In accordance with the results, a good quality of wire cleaning from SiO2 compounds was obtained.

Within-wafer CD variation induced by wafer shape

NASA Astrophysics Data System (ADS)

Huang, Chi-hao; Yang, Mars; Yang, Elvis; Yang, T. H.; Chen, K. C.

2016-03-01

In order to meet the increasing storage capacity demand and reduce bit cost of NAND flash memories, 3D stacked vertical flash cell array has been proposed. In constructing 3D NAND flash memories, the bit number per unit area is increased as increasing the number of stacked layers. However, the increased number of stacked layers has made the film stress control extremely important for maintaining good process quality. The residual film stress alters the wafer shape accordingly several process impacts have been readily observed across wafer, such as film deposition non-uniformity, etch rate non-uniformity, wafer chucking error on scanner, materials coating/baking defects, overlay degradation and critical dimension (CD) non-uniformity. The residual tensile and compressive stresses on wafers will result in concave and convex wafer shapes, respectively. This study investigates within-wafer CD uniformity (CDU) associated with wafer shape change induced by the 3D NAND flash memory processes. Within-wafer CDU was correlated with several critical parameters including different wafer bow heights of concave and convex wafer shapes, photo resists with different post exposure baking (PEB) temperature sensitivities, and DoseMapper compensation. The results indicated the trend of within-wafer CDU maintains flat for convex wafer shapes with bow height up to +230um and concave wafer shapes with bow height ranging from 0 ~ -70um, while the within-wafer CDU trends up from -70um to -246um wafer bow heights. To minimize the within-wafer CD distribution induced by wafer warpage, carefully tailoring the film stack and thermal budget in the process flow for maintaining the wafer shape at CDU friendly range is indispensable and using photo-resist materials with lower PEB temperature sensitivity is also suggested. In addition, DoseMapper compensation is also an alternative to greatly suppress the within-wafer CD non-uniformity but the photo-resist profile variation induced by across-wafer PEB temperature non-uniformity attributed to wafer warpage is uncorrectable, and the photo-resist profile variation is believed to affect across-wafer etch bias uniformity to some degree.

Measurement of cosmic-ray reconstruction efficiencies in the MicroBooNE LArTPC using a small external cosmic-ray counter

NASA Astrophysics Data System (ADS)

Acciarri, R.; Adams, C.; An, R.; Anthony, J.; Asaadi, J.; Auger, M.; Bagby, L.; Balasubramanian, S.; Baller, B.; Barnes, C.; Barr, G.; Bass, M.; Bay, F.; Bishai, M.; Blake, A.; Bolton, T.; Camilleri, L.; Caratelli, D.; Carls, B.; Castillo Fernandez, R.; Cavanna, F.; Chen, H.; Church, E.; Cianci, D.; Cohen, E.; Collin, G. H.; Conrad, J. M.; Convery, M.; Crespo-Anadón, J. I.; Del Tutto, M.; Devitt, D.; Dytman, S.; Eberly, B.; Ereditato, A.; Escudero Sanchez, L.; Esquivel, J.; Fadeeva, A. A.; Fleming, B. T.; Foreman, W.; Furmanski, A. P.; Garcia-Gamez, D.; Garvey, G. T.; Genty, V.; Goeldi, D.; Gollapinni, S.; Graf, N.; Gramellini, E.; Greenlee, H.; Grosso, R.; Guenette, R.; Hackenburg, A.; Hamilton, P.; Hen, O.; Hewes, J.; Hill, C.; Ho, J.; Horton-Smith, G.; Hourlier, A.; Huang, E.-C.; James, C.; de Vries, J. Jan; Jen, C.-M.; Jiang, L.; Johnson, R. A.; Joshi, J.; Jostlein, H.; Kaleko, D.; Kalousis, L. N.; Karagiorgi, G.; Ketchum, W.; Kirby, B.; Kirby, M.; Kobilarcik, T.; Kreslo, I.; Lange, G.; Laube, A.; Li, Y.; Lister, A.; Littlejohn, B. R.; Lockwitz, S.; Lorca, D.; Louis, W. C.; Luethi, M.; Lundberg, B.; Luo, X.; Marchionni, A.; Mariani, C.; Marshall, J.; Martinez Caicedo, D. A.; Meddage, V.; Miceli, T.; Mills, G. B.; Moon, J.; Mooney, M.; Moore, C. D.; Mousseau, J.; Murrells, R.; Naples, D.; Nienaber, P.; Nowak, J.; Palamara, O.; Paolone, V.; Papavassiliou, V.; Pate, S. F.; Pavlovic, Z.; Pelkey, R.; Piasetzky, E.; Porzio, D.; Pulliam, G.; Qian, X.; Raaf, J. L.; Rafique, A.; Rochester, L.; von Rohr, C. Rudolf; Russell, B.; Schmitz, D. W.; Schukraft, A.; Seligman, W.; Shaevitz, M. H.; Sinclair, J.; Smith, A.; Snider, E. L.; Soderberg, M.; Söldner-Rembold, S.; Soleti, S. R.; Spentzouris, P.; Spitz, J.; John, J. St.; Strauss, T.; Szelc, A. M.; Tagg, N.; Terao, K.; Thomson, M.; Toups, M.; Tsai, Y.-T.; Tufanli, S.; Usher, T.; Van De Pontseele, W.; Van de Water, R. G.; Viren, B.; Weber, M.; Wickremasinghe, D. A.; Wolbers, S.; Wongjirad, T.; Woodruff, K.; Yang, T.; Yates, L.; Zeller, G. P.; Zennamo, J.; Zhang, C.

2017-12-01

The MicroBooNE detector is a liquid argon time projection chamber at Fermilab designed to study short-baseline neutrino oscillations and neutrino-argon interaction cross-section. Due to its location near the surface, a good understanding of cosmic muons as a source of backgrounds is of fundamental importance for the experiment. We present a method of using an external 0.5 m (L) × 0.5 m (W) muon counter stack, installed above the main detector, to determine the cosmic-ray reconstruction efficiency in MicroBooNE. Data are acquired with this external muon counter stack placed in three different positions, corresponding to cosmic rays intersecting different parts of the detector. The data reconstruction efficiency of tracks in the detector is found to be epsilondata=(97.1±0.1 (stat) ± 1.4 (sys))%, in good agreement with the Monte Carlo reconstruction efficiency epsilonMC = (97.4±0.1)%. This analysis represents a small-scale demonstration of the method that can be used with future data coming from a recently installed cosmic-ray tagger system, which will be able to tag ≈80% of the cosmic rays passing through the MicroBooNE detector.

Measurement of cosmic-ray reconstruction efficiencies in the MicroBooNE LArTPC using a small external cosmic-ray counter

DOE PAGES

Acciarri, R.; Adams, C.; An, R.; ...

2017-12-01

The MicroBooNE detector is a liquid argon time projection chamber at Fermilab designed to study short-baseline neutrino oscillations and neutrino-argon interaction cross-section. Due to its location near the surface, a good understanding of cosmic muons as a source of backgrounds is of fundamental importance for the experiment. We present a method of using an external 0.5 m (L) x 0.5 m (W) muon counter stack, installed above the main detector, to determine the cosmic-ray reconstruction efficiency in MicroBooNE. Data are acquired with this external muon counter stack placed in three different positions, corresponding to cosmic rays intersecting different parts of the detector. The data reconstruction efficiency of tracks in the detector is found to bemore » $$\\epsilon_{\\mathrm{data}}=(97.1\\pm0.1~(\\mathrm{stat}) \\pm 1.4~(\\mathrm{sys}))\\%$$, in good agreement with the Monte Carlo reconstruction efficiency $$\\epsilon_{\\mathrm{MC}} = (97.4\\pm0.1)\\%$$. This analysis represents a small-scale demonstration of the method that can be used with future data coming from a recently installed cosmic-ray tagger system, which will be able to tag $$\\approx80\\%$$ of the cosmic rays passing through the MicroBooNE detector.« less

Measurement of cosmic-ray reconstruction efficiencies in the MicroBooNE LArTPC using a small external cosmic-ray counter

DOE PAGES

Acciarri, R.; Adams, C.; An, R.; ...

2017-12-20

The MicroBooNE detector is a liquid argon time projection chamber at Fermilab designed to study short-baseline neutrino oscillations and neutrino-argon interaction cross-section. Due to its location near the surface, a good understanding of cosmic muons as a source of backgrounds is of fundamental importance for the experiment. In this paper, we present a method of using an external 0.5 m (L) × 0.5 m (W) muon counter stack, installed above the main detector, to determine the cosmic-ray reconstruction efficiency in MicroBooNE. Data are acquired with this external muon counter stack placed in three different positions, corresponding to cosmic rays intersectingmore » different parts of the detector. The data reconstruction efficiency of tracks in the detector is found to be ϵ data=(97.1±0.1 (stat) ± 1.4 (sys))%, in good agreement with the Monte Carlo reconstruction efficiency ϵ MC = (97.4±0.1)%. In conclusion, this analysis represents a small-scale demonstration of the method that can be used with future data coming from a recently installed cosmic-ray tagger system, which will be able to tag ≈80% of the cosmic rays passing through the MicroBooNE detector.« less

Measurement of cosmic-ray reconstruction efficiencies in the MicroBooNE LArTPC using a small external cosmic-ray counter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Acciarri, R.; Adams, C.; An, R.

The MicroBooNE detector is a liquid argon time projection chamber at Fermilab designed to study short-baseline neutrino oscillations and neutrino-argon interaction cross-section. Due to its location near the surface, a good understanding of cosmic muons as a source of backgrounds is of fundamental importance for the experiment. In this paper, we present a method of using an external 0.5 m (L) × 0.5 m (W) muon counter stack, installed above the main detector, to determine the cosmic-ray reconstruction efficiency in MicroBooNE. Data are acquired with this external muon counter stack placed in three different positions, corresponding to cosmic rays intersectingmore » different parts of the detector. The data reconstruction efficiency of tracks in the detector is found to be ϵ data=(97.1±0.1 (stat) ± 1.4 (sys))%, in good agreement with the Monte Carlo reconstruction efficiency ϵ MC = (97.4±0.1)%. In conclusion, this analysis represents a small-scale demonstration of the method that can be used with future data coming from a recently installed cosmic-ray tagger system, which will be able to tag ≈80% of the cosmic rays passing through the MicroBooNE detector.« less

Measurement of cosmic-ray reconstruction efficiencies in the MicroBooNE LArTPC using a small external cosmic-ray counter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Acciarri, R.; et al.

2017-07-31

The MicroBooNE detector is a liquid argon time projection chamber at Fermilab designed to study short-baseline neutrino oscillations and neutrino-argon interaction cross-section. Due to its location near the surface, a good understanding of cosmic muons as a source of backgrounds is of fundamental importance for the experiment. We present a method of using an external 0.5 m (L) x 0.5 m (W) muon counter stack, installed above the main detector, to determine the cosmic-ray reconstruction efficiency in MicroBooNE. Data are acquired with this external muon counter stack placed in three different positions, corresponding to cosmic rays intersecting different parts of the detector. The data reconstruction efficiency of tracks in the detector is found to bemore » $$\\epsilon_{\\mathrm{data}}=(97.1\\pm0.1~(\\mathrm{stat}) \\pm 1.4~(\\mathrm{sys}))\\%$$, in good agreement with the Monte Carlo reconstruction efficiency $$\\epsilon_{\\mathrm{MC}} = (97.4\\pm0.1)\\%$$. This analysis represents a small-scale demonstration of the method that can be used with future data coming from a recently installed cosmic-ray tagger system, which will be able to tag $$\\approx80\\%$$ of the cosmic rays passing through the MicroBooNE detector.« less

High Resolution Energetic X-ray Imager (HREXI)

NASA Astrophysics Data System (ADS)

Grindlay, Jonathan

We propose to design and build the first imaging hard X-ray detector system that incorporates 3D stacking of closely packed detector readouts in finely-spaced imaging arrays with their required data processing and control electronics. In virtually all imaging astronomical detectors, detector readout is done with flex connectors or connections that are not vertical but rather horizontal , requiring loss of focal plane area. For high resolution pixel detectors needed for high speed event-based X-ray imaging, from low energy applications (CMOS) with focusing X-ray telescopes, to hard X-ray applications with pixelated CZT for large area coded aperture telescopes, this new detector development offers great promise. We propose to extend our previous and current APRA supported ProtoEXIST program that has developed the first large area imaging CZT detectors and demonstrated their astrophysical capabilities on two successful balloon flight to a next generation High Resolution Energetic X-ray Imager (HREXI), which would incorporate microvia technology for the first time to connect the readout ASIC on each CZT crystal directly to its control and data processing system. This 3-dimensional stacking of detector and readout/control system means that large area (>2m2) imaging detector planes for a High Resolution Wide-field hard X-ray telescope can be built with initially greatly reduced detector gaps and ultimately with no gaps. This increases detector area, efficiency, and simplicity of detector integration. Thus higher sensitivity wide-field imagers will be possible at lower cost. HREXI will enable a post-Swift NASA mission such as the EREXS concept proposed to PCOS to be conducted as a future MIDEX mission. This mission would conduct a high resolution (<2 arcmin) , broad band (5 200 keV) hard X-ray survey of black holes on all scales with ~10X higher sensitivity than Swift. In the current era of Time Domain Astrophysics, such a survey capability, in conjunction with a nIR telescope in spece, will enable GRBs to be used as probes of the formation of the first stars and structure in the Universe. HREXI on its own, with broad bandwidth and high spectral and spatial resolution, will extend both Galactic surveys for obscured young supernova remnants (44Ti sources) and for transients, black holes and flaring AGN and TDEs well at greatly increased sensitivity and spatial/spectral resolution than has been done with Swift or INTEGRAL. If the HREXI-1 technology is developed in the first year of this proposed effort, it could be used on the upcoming Brazil-US MIRAX telescope on the Lattes satellite, scheduled for a 2018 launch with imaging detector planes to be provided (under contract) by our group. Finally, the 3D stacking technology development proposed here for imaging detector arrays has broad application to Wide Field soft X-ray imaging, to CMB polarization mode (B mode) imaging detectors with very high detector-pixel count, and to Homeland Security.

Perforated semiconductor neutron detectors for battery operated portable modules

NASA Astrophysics Data System (ADS)

McGregor, Douglas S.; Bellinger, Steven L.; Bruno, David; McNeil, Walter J.; Patterson, Eric; Shultis, J. Kenneth; Solomon, C. J.; Unruh, Troy

2007-09-01

Perforated semiconductor diode detectors have been under development for several years at Kansas State University for a variety of neutron detection applications. The fundamental device configuration is a pin diode detector fabricated from high-purity float zone refined Si wafers. Perforations are etched into the diode surface with inductively-coupled plasma (ICP) reactive ion etching (RIE) and backfilled with 6LiF neutron reactive material. The perforation shapes and depths can be optimized to yield a flat response to neutrons over a wide variation of angles. The prototype devices delivered over 3.8% thermal neutron detection efficiency while operating on only 15 volts. The highest efficiency devices thus far have delivered over 12% thermal neutron detection efficiency. The miniature devices are 5.6 mm in diameter and require minimal power to operate, ranging from 3.3 volts to 15 volts, depending upon the amplifying electronics. The battery operated devices have been incorporated into compact modules with a digital readout. Further, the new modules have incorporated wireless readout technology and can be monitored remotely. The neutron detection modules can be used for neutron dosimetry and neutron monitoring. When coupled with high-density polyethylene, the detectors can be used to measure fission neutrons from spontaneous fission sources. Monto Carlo analysis indicates that the devices can be used in cargo containers as a passive search tool for spontaneous fission sources, such as 240Pu. Measurements with a 252Cf source are being conducted for verification.

Fracture Tests of Etched Components Using a Focused Ion Beam Machine

NASA Technical Reports Server (NTRS)

Kuhn, Jonathan, L.; Fettig, Rainer K.; Moseley, S. Harvey; Kutyrev, Alexander S.; Orloff, Jon; Powers, Edward I. (Technical Monitor)

2000-01-01

Many optical MEMS device designs involve large arrays of thin (0.5 to 1 micron components subjected to high stresses due to cyclic loading. These devices are fabricated from a variety of materials, and the properties strongly depend on size and processing. Our objective is to develop standard and convenient test methods that can be used to measure the properties of large numbers of witness samples, for every device we build. In this work we explore a variety of fracture test configurations for 0.5 micron thick silicon nitride membranes machined using the Reactive Ion Etching (RIE) process. Testing was completed using an FEI 620 dual focused ion beam milling machine. Static loads were applied using a probe. and dynamic loads were applied through a piezo-electric stack mounted at the base of the probe. Results from the tests are presented and compared, and application for predicting fracture probability of large arrays of devices are considered.

Micromachined mold-type double-gated metal field emitters

NASA Astrophysics Data System (ADS)

Lee, Yongjae; Kang, Seokho; Chun, Kukjin

1997-12-01

Electron field emitters with double gates were fabricated using micromachining technology and the effect of the electric potential of the focusing gate (or second gate) was experimentally evaluated. The molybdenum field emission tip was made by filling a cusplike mold formed when a conformal film was deposited on the hole-trench that had been patterned on stacked metals and dielectric layers. The hole-trench was patterned by electron beam lithography and reactive ion etching. Each field emitter has a 0960-1317/7/4/009/img1 diameter extraction gate (or first gate) and a 0960-1317/7/4/009/img2 diameter focusing gate (or second gate). To make a path for the emitted electrons, silicon bulk was etched anisotropically in KOH and EDP (ethylene-diamine pyrocatechol) solution successively. The I - V characteristics and anode current change due to the focusing gate potential were measured.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Douglas, E. A.; Reza, S.; Sanchez, C.

Due to the ultra-wide bandgap of Al-rich AlGaN, up to 5.8 eV for the structures in this study, obtaining low resistance ohmic contacts is inherently difficult to achieve. A comparative study of three different fabrication schemes is presented for obtaining ohmic contacts to an Al-rich AlGaN channel. Schottky-like behavior was observed for several different planar metallization stacks (and anneal temperatures), in addition to a dry-etch recess metallization contact scheme on Al 0.85Ga 0.15N/Al 0.66Ga 0.34N. However, a dry etch recess followed by n +-GaN regrowth fabrication process is reported as a means to obtain lower contact resistivity ohmic contacts onmore » a Al 0.85Ga 0.15N/Al 0.66Ga 0.34N heterostructure. In conclusion, specific contact resistivity of 5×10 -3 Ω cm 2 was achieved after annealing Ti/Al/Ni/Au metallization.« less

A study of commercially-available polyethylene terephthalate (PET) and polycarbonate as nuclear track detector materials

NASA Astrophysics Data System (ADS)

Espinosa, G.; Golzarri, J. I.; Vazquez-Lopez, C.; Trejo, R.; Lopez, K.; Rickards, J.

2014-07-01

In the study of the sensitivity of materials to be used as nuclear track detectors, it was found that commercial polyethylene terephthalate (PET) from Ciel® water bottles, commercial roof cover polycarbonate, and recycled packaging strips (recycled PET), can be used as nuclear track detectors. These three commercial materials present nuclear tracks when bombarded by 2.27 MeV nitrogen ions produced in a Pelletron particle accelerator, and by fission fragments from a 252Cf source (79.4 and 103.8 MeV), after a chemical etching with a 6.25M KOH solution, or with a 6.25M KOH solution with 20% methanol, both solutions at 60±1°C. As an example, the nitrogen ions deposit approximately 1 keV/nm in the form of ionization and excitation at the surface of PET, as calculated using the SRIM code. The fission fragments deposit up to 9 keV/nm at the surface, in both cases generating sufficient free radicals to initiate the track formation process. However, 5 MeV alpha particles, typical of radon (222Rn) emissions, deposit only 0.12 keV/nm, do not present tracks after the chemical etching process. This valuable information could be very useful for further studies of new materials in nuclear track methodology.

A neutron track etch detector for electron linear accelerators in radiotherapy

PubMed Central

Vukovic, Branko; Faj, Dario; Poje, Marina; Varga, Maja; Radolic, Vanja; Miklavcic, Igor; Ivkovic, Ana; Planinic, Josip

2010-01-01

Background Electron linear accelerators in medical radiotherapy have replaced cobalt and caesium sources of radiation. However, medical accelerators with photon energies over 10 MeV generate undesired fast neutron contamination in a therapeutic X-ray photon beam. Photons with energies above 10 MeV can interact with the atomic nucleus of a high-Z material, of which the target and the head of an accelerator consist, and lead to the neutron ejection. Results and conclusions. Our neutron dosimeter, composed of the LR-115 track etch detector and boron foil BN-1 converter, was calibrated on thermal neutrons generated in the nuclear reactor of the Josef Stefan Institute (Slovenia), and applied to dosimetry of undesirable neutrons in photon radiotherapy by the linear accelerator 15 MV Siemens Mevatron. Having considered a high dependence of a cross-section between neutron and boron on neutron energy, and broad neutron spectrum in a photon beam, as well as outside the entrance door to maze of the Mevatron, we developed a method for determining the effective neutron detector response. A neutron dose rate in the photon beam was measured to be 1.96 Sv/h. Outside the Mevatron room the neutron dose rate was 0.62 μSv/h. PACS: 87.52. Ga; 87.53.St; 29.40.Wk. PMID:22933893

On the retrieval of crystallographic information from atom probe microscopy data via signal mapping from the detector coordinate space.

PubMed

Wallace, Nathan D; Ceguerra, Anna V; Breen, Andrew J; Ringer, Simon P

2018-06-01

Atom probe tomography is a powerful microscopy technique capable of reconstructing the 3D position and chemical identity of millions of atoms within engineering materials, at the atomic level. Crystallographic information contained within the data is particularly valuable for the purposes of reconstruction calibration and grain boundary analysis. Typically, analysing this data is a manual, time-consuming and error prone process. In many cases, the crystallographic signal is so weak that it is difficult to detect at all. In this study, a new automated signal processing methodology is demonstrated. We use the affine properties of the detector coordinate space, or the 'detector stack', as the basis for our calculations. The methodological framework and the visualisation tools are shown to be superior to the standard method of crystallographic pole visualisation directly from field evaporation images and there is no requirement for iterations between a full real-space initial tomographic reconstruction and the detector stack. The mapping approaches are demonstrated for aluminium, tungsten, magnesium and molybdenum. Implications for reconstruction calibration, accuracy of crystallographic measurements, reliability and repeatability are discussed. Copyright © 2018 Elsevier B.V. All rights reserved.

Photon-Counting H33D Detector for Biological Fluorescence Imaging

PubMed Central

Michalet, X.; Siegmund, O.H.W.; Vallerga, J.V.; Jelinsky, P.; Millaud, J.E.; Weiss, S.

2010-01-01

We have developed a photon-counting High-temporal and High-spatial resolution, High-throughput 3-Dimensional detector (H33D) for biological imaging of fluorescent samples. The design is based on a 25 mm diameter S20 photocathode followed by a 3-microchannel plate stack, and a cross delay line anode. We describe the bench performance of the H33D detector, as well as preliminary imaging results obtained with fluorescent beads, quantum dots and live cells and discuss applications of future generation detectors for single-molecule imaging and high-throughput study of biomolecular interactions. PMID:20151021

A small-angle large-acceptance detection system for hadrons

NASA Astrophysics Data System (ADS)

Kalantar-Nayestanaki, N.; Bacelar, J. C. S.; Brandenburg, S.; Huisman, H.; Messchendorp, J. G.; Mul, F. A.; Schadmand, S.; van der Schaaf, K.; Schippers, J. M.; Volkerts, M.

2000-04-01

The performance of a segmented large-acceptance detector, capable of measuring particles at small forward angles, is presented. The Small-Angle Large-Acceptance Detector (SALAD), was built to handle very high rates of particles impinging on the detector. Particles down to a few MeV can be detected with it. The position of charged particles is measured by two Multi-Wire Proportional Chambers while scintillator blocks are used to measure the energy of the detected particle. A stack of thin scintillators placed behind the energy detectors allows for a hardware rejection (veto) of high-energy particles going through the scintillator blocks.

First tests of Timepix detectors based on semi-insulating GaAs matrix of different pixel size

NASA Astrophysics Data System (ADS)

Zaťko, B.; Kubanda, D.; Žemlička, J.; Šagátová, A.; Zápražný, Z.; Boháček, P.; Nečas, V.; Mora, Y.; Pichotka, M.; Dudák, J.

2018-02-01

In this work, we have focused on Timepix detectors coupled with the semi-insulating GaAs material sensor. We used undoped bulk GaAs material with the thickness of 350 μm. We prepared and tested four pixelated detectors with 165 μm and 220 μm pixel size with two versions of technology preparation, without and with wet chemically etched trenches around each pixel. We have carried out adjustment of GaAs Timepix detectors to optimize their performance. The energy calibration of one GaAs Timepix detector in Time-over-threshold mode was performed with the use of 241Am and 133Ba radioisotopes. We were able to detect γ-photons with the energy up to 160 keV. The X-ray imaging quality of GaAs Timepix detector was tested with X-ray source using various samples. After flat field we obtained very promising imaging performance of tested GaAs Timepix detectors.

A micro-scale plasma spectrometer for space and plasma edge applications (invited)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Scime, E. E., E-mail: escime@wvu.edu; Keesee, A. M.; Elliott, D.

2016-11-15

A plasma spectrometer design based on advances in lithography and microchip stacking technologies is described. A series of curved plate energy analyzers, with an integrated collimator, is etched into a silicon wafer. Tests of spectrometer elements, the energy analyzer and collimator, were performed with a 5 keV electron beam. The measured collimator transmission and energy selectivity were in good agreement with design targets. A single wafer element could be used as a plasma processing or fusion first wall diagnostic.

Advanced Cu chemical displacement technique for SiO2-based electrochemical metallization ReRAM application.

PubMed

Chin, Fun-Tat; Lin, Yu-Hsien; You, Hsin-Chiang; Yang, Wen-Luh; Lin, Li-Min; Hsiao, Yu-Ping; Ko, Chum-Min; Chao, Tien-Sheng

2014-01-01

This study investigates an advanced copper (Cu) chemical displacement technique (CDT) with varying the chemical displacement time for fabricating Cu/SiO2-stacked resistive random-access memory (ReRAM). Compared with other Cu deposition methods, this CDT easily controls the interface of the Cu-insulator, the switching layer thickness, and the immunity of the Cu etching process, assisting the 1-transistor-1-ReRAM (1T-1R) structure and system-on-chip integration. The modulated shape of the Cu-SiO2 interface and the thickness of the SiO2 layer obtained by CDT-based Cu deposition on SiO2 were confirmed by scanning electron microscopy and atomic force microscopy. The CDT-fabricated Cu/SiO2-stacked ReRAM exhibited lower operation voltages and more stable data retention characteristics than the control Cu/SiO2-stacked sample. As the Cu CDT processing time increased, the forming and set voltages of the CDT-fabricated Cu/SiO2-stacked ReRAM decreased. Conversely, decreasing the processing time reduced the on-state current and reset voltage while increasing the endurance switching cycle time. Therefore, the switching characteristics were easily modulated by Cu CDT, yielding a high performance electrochemical metallization (ECM)-type ReRAM.

Ultrastructure of the surface of dental enamel with molar incisor hypomineralization (MIH) with and without acid etching.

PubMed

Bozal, Carola B; Kaplan, Andrea; Ortolani, Andrea; Cortese, Silvina G; Biondi, Ana M

2015-01-01

The aim of the present work was to analyze the ultrastructure and mineral composition of the surface of the enamel on a molar with MIH, with and without acid etching. A permanent tooth without clinical MIH lesions (control) and a tooth with clinical diagnosis of mild and moderate MIH, with indication for extraction, were processed with and without acid etching (H3PO4 37%, 20") for observation with scanning electron microscope (SEM) ZEISS (Supra 40) and mineral composition analysis with an EDS detector (Oxford Instruments). The control enamel showed normal prismatic surface and etching pattern. The clinically healthy enamel on the tooth with MIH revealed partial loss of prismatic pattern. The mild lesion was porous with occasional cracks. The moderate lesion was more porous, with larger cracks and many scales. The mineral composition of the affected surfaces had lower Ca and P content and higher O and C. On the tooth with MIH, even on normal looking enamel, the demineralization does not correspond to an etching pattern, and exhibits exposure of crystals with rods with rounded ends and less demineralization in the inter-prismatic spaces. Acid etching increased the presence of cracks and deep pores in the adamantine structure of the enamel with lesion. In moderate lesions, the mineral composition had higher content of Ca, P and Cl. Enamel with MIH, even on clinically intact adamantine surfaces, shows severe alterations in the ultrastructure and changes in ionic composition, which affect the acid etching pattern and may interfere with adhesion.

Color sensitive silicon photomultiplers with micro-cell level encoding for DOI PET detectors

NASA Astrophysics Data System (ADS)

Shimazoe, Kenji; Koyama, Akihiro; Takahashi, Hiroyuki; Ganka, Thomas; Iskra, Peter; Marquez Seco, Alicia; Schneider, Florian; Wiest, Florian

2017-11-01

There have been many studies on Depth Of Interaction (DOI) identification for high resolution Positron Emission Tomography (PET) systems, including those on phoswich detectors, double-sided readout, light sharing methods, and wavelength discrimination. The wavelength discrimination method utilizes the difference in wavelength of stacked scintillators and requires a color sensitive photodetector. Here, a new silicon photomultiplier (SiPM) coupled to a color filter (colorSiPM) was designed and fabricated for DOI detection. The fabricated colorSiPM has two anode readouts that are sensitive to blue and green color. The colorSiPM's response and DOI identification capability for stacked GAGG and LYSO crystals are characterized. The fabricated colorSiPM is sensitive enough to detect a peak of 662 keV from a 137 Cs source.

Fabrication of superconducting nanowire single-photon detectors by nonlinear femtosecond optical lithography

NASA Astrophysics Data System (ADS)

Minaev, N. V.; Tarkhov, M. A.; Dudova, D. S.; Timashev, P. S.; Chichkov, B. N.; Bagratashvili, V. N.

2018-02-01

This paper describes a new approach to the fabrication of superconducting nanowire single-photon detectors from ultrathin NbN films on SiO2 substrates. The technology is based on nonlinear femtosecond optical lithography and includes direct formation of the sensitive element of the detector (the meander) through femtosecond laser exposure of the polymethyl methacrylate resist at a wavelength of 525 nm and subsequent removal of NbN using plasma-chemical etching. The nonlinear femtosecond optical lithography method allows the formation of planar structures with a spatial resolution of ~50 nm. These structures were used to fabricate single-photon superconducting detectors with quantum efficiency no worse than 8% at a wavelength of 1310 nm and dark count rate of 10 s-1 at liquid helium temperature.

Development of the RAIDS extreme ultraviolet wedge and strip detector. [Remote Atmospheric and Ionospheric Detector System

NASA Technical Reports Server (NTRS)

Kayser, D. C.; Chater, W. T.; Christensen, A. B.; Howey, C. K.; Pranke, J. B.

1988-01-01

In the next few years the Remote Atmospheric and Ionospheric Detector System (RAIDS) package will be flown on a Tiros spacecraft. The EUV spectrometer experiment contains a position-sensitive detector based on wedge and strip anode technology. A detector design has been implemented in brazed alumina and kovar to provide a rugged bakeable housing and anode. A stack of three 80:1 microchannel plates is operated at 3500-4100 V. to achieve a gain of about 10 to the 7th. The top MCP is to be coated with MgF for increased quantum efficiency in the range of 50-115 nm. A summary of fabrication techniques and detector performance characteristics is presented.

Characterization of CdTe and (CdZn)Te detectors with different metal contacts

NASA Astrophysics Data System (ADS)

Pekárek, J.; Belas, E.; Grill, R.; Uxa, Å.; James, R. B.

2013-09-01

In the present work we studied an influence of different types of surface etching and surface passivation of high resistivity CdZnTe-based semiconductor detector material. The aim was to find the optimal conditions to improve the properties of metal-semiconductor contact. The main effort was to reduce the leakage current and thus get better X-ray and gamma-ray spectrum, i.e. to create a detector operating at room temperature based on this semiconductor material with sufficient energy resolution and the maximum charge collection efficiency. Individual surface treatments were characterized by I-V characteristics, spectral analysis and by determination of the profile of the internal electric field.

Method for producing a hybridization of detector array and integrated circuit for readout

NASA Technical Reports Server (NTRS)

Fossum, Eric R. (Inventor); Grunthaner, Frank J. (Inventor)

1993-01-01

A process is explained for fabricating a detector array in a layer of semiconductor material on one substrate and an integrated readout circuit in a layer of semiconductor material on a separate substrate in order to select semiconductor material for optimum performance of each structure, such as GaAs for the detector array and Si for the integrated readout circuit. The detector array layer is lifted off its substrate, laminated on the metallized surface on the integrated surface, etched with reticulating channels to the surface of the integrated circuit, and provided with interconnections between the detector array pixels and the integrated readout circuit through the channels. The adhesive material for the lamination is selected to be chemically stable to provide electrical and thermal insulation and to provide stress release between the two structures fabricated in semiconductor materials that may have different coefficients of thermal expansion.

The fabrication of nitrogen detector porous silicon nanostructures

NASA Astrophysics Data System (ADS)

Husairi, F. S.; Othman, N.; Eswar, K. A.; Guliling, Muliyadi; Khusaimi, Z.; Rusop, M.; Abdullah, S.

2018-05-01

In this study the porous silicon nanostructure used as a the nitrogen detector was fabricated by using anodization method because of simple and easy to handle. This method using 20 mA/ cm2 of current density and the etching time is from 10 - 40 minutes. The properties of the porous silicon nanostructure analyzed using I-V testing (electrical properties) and photoluminescence spectroscopy. From the I-V testing, sample PsiE40 where the sensitivity is 25.4% is a sensitivity of PSiE40 at 10 seconds exposure time.

Design and Fabrication of Two-Dimensional Semiconducting Bolometer Arrays for the High Resolution Airborne Wideband Camera (HAWC) and the Submillimeter High Angular Resolution Camera II (SHARC-II)

NASA Technical Reports Server (NTRS)

Voellmer, George M.; Allen, Christine A.; Amato, Michael J.; Babu, Sachidananda R.; Bartels, Arlin E.; Benford, Dominic J.; Derro, Rebecca J.; Dowell, C. Darren; Harper, D. Al; Jhabvala, Murzy D.;

Design and Fabrication of Two-Dimensional Semiconducting Bolometer Arrays for the High Resolution Airborne Wideband Camera (HAWC) and the Submillimeter High Angular Resolution Camera II (SHARC-II)

NASA Technical Reports Server (NTRS)

Voellmer, George M.; Allen, Christine A.; Amato, Michael J.; Babu, Sachidananda R.; Bartels, Arlin E.; Benford, Dominic J.; Derro, Rebecca J.; Dowell, C. Darren; Harper, D. Al; Jhabvala, Murzy D.

2002-01-01

The High resolution Airborne Wideband Camera (HAWC) and the Submillimeter High Angular Resolution Camera II (SHARC II) will use almost identical versions of an ion-implanted silicon bolometer array developed at the National Aeronautics and Space Administration's Goddard Space Flight Center (GSFC). The GSFC 'Pop-up' Detectors (PUD's) use a unique folding technique to enable a 12 x 32-element close-packed array of bolometers with a filling factor greater than 95 percent. A kinematic Kevlar(trademark) suspension system isolates the 200 mK bolometers from the helium bath temperature, and GSFC - developed silicon bridge chips make electrical connection to the bolometers, while maintaining thermal isolation. The JFET preamps operate at 120 K. Providing good thermal heat sinking for these, and keeping their conduction and radiation from reaching the nearby bolometers, is one of the principal design challenges encountered. Another interesting challenge is the preparation of the silicon bolometers. They are manufactured in 32-element, planar rows using Micro Electro Mechanical Systems (MEMS) semiconductor etching techniques, and then cut and folded onto a ceramic bar. Optical alignment using specialized jigs ensures their uniformity and correct placement. The rows are then stacked to create the 12 x 32-element array. Engineering results from the first light run of SHARC II at the Caltech Submillimeter Observatory (CSO) are presented.

The energy spectrum of Jovian electrons in interplanetary space

NASA Technical Reports Server (NTRS)

Christon, S. P.; Cummings, A. C.; Stone, E. C.; Webber, W. R.

1985-01-01

The energy spectrum of electrons with energies approximately 10 to approximately 180 MeV measured with the electron telescope on the Voyager 1 and 2 spacecraft in interplanetary space from 1978 to 1983 is reported. The kinetic energy of electrons is determined by double dE/dx measurements from the first two detectors (D1,D2) of a stack of eight solid state detectors and by the range of particle penetration into the remaining six detectors (D3 to D8) which are interleaved with tungsten absorbers.

CsI-Silicon Particle detector for Heavy ions Orbiting in Storage rings (CsISiPHOS)

NASA Astrophysics Data System (ADS)

Najafi, M. A.; Dillmann, I.; Bosch, F.; Faestermann, T.; Gao, B.; Gernhäuser, R.; Kozhuharov, C.; Litvinov, S. A.; Litvinov, Yu. A.; Maier, L.; Nolden, F.; Popp, U.; Sanjari, M. S.; Spillmann, U.; Steck, M.; Stöhlker, T.; Weick, H.

2016-11-01

A heavy-ion detector was developed for decay studies in the Experimental Storage Ring (ESR) at the GSI Helmholtz Centre for Heavy Ion Research in Darmstadt, Germany. This detector serves as a prototype for the in-pocket particle detectors for future experiments with the Collector Ring (CR) at FAIR (Facility for Antiproton and Ion Research). The detector includes a stack of six silicon pad sensors, a double-sided silicon strip detector (DSSD), and a CsI(Tl) scintillation detector. It was used successfully in a recent experiment for the detection of the β+-decay of highly charged 142Pm60+ ions. Based on the ΔE / E technique for particle identification and an energy resolution of 0.9% for ΔE and 0.5% for E (Full Width at Half Maximum (FWHM)), the detector is well-suited to distinguish neighbouring isobars in the region of interest.

Gravitational wave spectroscopy of binary neutron star merger remnants with mode stacking

NASA Astrophysics Data System (ADS)

Yang, Huan; Paschalidis, Vasileios; Yagi, Kent; Lehner, Luis; Pretorius, Frans; Yunes, Nicolás

2018-01-01

A binary neutron star coalescence event has recently been observed for the first time in gravitational waves, and many more detections are expected once current ground-based detectors begin operating at design sensitivity. As in the case of binary black holes, gravitational waves generated by binary neutron stars consist of inspiral, merger, and postmerger components. Detecting the latter is important because it encodes information about the nuclear equation of state in a regime that cannot be probed prior to merger. The postmerger signal, however, can only be expected to be measurable by current detectors for events closer than roughly ten megaparsecs, which given merger rate estimates implies a low probability of observation within the expected lifetime of these detectors. We carry out Monte Carlo simulations showing that the dominant postmerger signal (the ℓ=m =2 mode) from individual binary neutron star mergers may not have a good chance of observation even with the most sensitive future ground-based gravitational wave detectors proposed so far (the Einstein Telescope and Cosmic Explorer, for certain equations of state, assuming a full year of operation, the latest merger rates, and a detection threshold corresponding to a signal-to-noise ratio of 5). For this reason, we propose two methods that stack the postmerger signal from multiple binary neutron star observations to boost the postmerger detection probability. The first method follows a commonly used practice of multiplying the Bayes factors of individual events. The second method relies on an assumption that the mode phase can be determined from the inspiral waveform, so that coherent mode stacking of the data from different events becomes possible. We find that both methods significantly improve the chances of detecting the dominant postmerger signal, making a detection very likely after a year of observation with Cosmic Explorer for certain equations of state. We also show that in terms of detection, coherent stacking is more efficient in accumulating confidence for the presence of postmerger oscillations in a signal than the first method. Moreover, assuming the postmerger signal is detected with Cosmic Explorer via stacking, we estimate through a Fisher analysis that the peak frequency can be measured to a statistical error of ˜4 - 20 Hz for certain equations of state. Such an error corresponds to a neutron star radius measurement to within ˜15 - 56 m , a fractional relative error ˜4 %, suggesting that systematic errors from theoretical modeling (≳100 m ) may dominate the error budget.

A self-aligned dry etching method for mechanical strain enhancement of germanium and its uniformity improvement for photonic applications

NASA Astrophysics Data System (ADS)

Lin, Yiding; Ma, Danhao; Lee, Kwang Hong; Michel, Jurgen; Tan, Chuan Seng

2018-02-01

A self-aligned dry etching method was proposed and verified theoretically to enhance the magnitude and simultaneously improve the uniformity of the tensile strain in a germanium (Ge) wave-guide (WG), with the help of tensile-stressed SiN stressor at the WG sidewalls. The SiN-strained germanium-on-insulator (GOI) WG was also experimentally demonstrated. Significant tensile strain was observed in the Ge material via micro-Raman measurements. This method could potentially facilitate a Ge photodetector with its optical detection range extended further towards longer wavelength and to be comparable with that of state-of-the-art InGaAs detectors.

Effect of chemical etching on the surface roughness of CdZnTe and CdMnTe gamma radiation detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hossain,A.; Babalola, S.; Bolotnikov, A.E.

2008-08-11

Generally, mechanical polishing is performed to diminish the cutting damage followed by chemical etching to remove the remaining damage on crystal surfaces. In this paper, we detail the findings from our study of the effects of various chemical treatments on the roughness of crystal surfaces. We prepared several CdZnTe (CZT) and CdMnTe (CMT) crystals by mechanical polishing with 5 {micro}m and/or lower grits of Al{sub 2}O{sub 3} abrasive papers including final polishing with 0.05-{micro}m particle size alumina powder and then etched them for different periods with a 2%, 5% Bromine-Methanol (B-M) solution, and also with an E-solution (HNO{sub 3}:H{sub 2}O:Cr{submore » 2}O{sub 7}). The material removal rate (etching rate) from the crystals was found to be 10 {micro}m, 30 {micro}m, and 15 {micro}m per minute, respectively. The roughness of the resulting surfaces was determined by the Atomic Force Microscopy (AFM) to identify the most efficient surface processing method by combining mechanical and chemical polishing.« less

Neutron Spectroscopy Using LiF Thin-Film Detectors

DTIC Science & Technology

2013-03-01

Michael A. Ford, BS Second Lieutenant, USAF Approved: LTC Stephen R. McHale (Chairman) Date John W. McClory, PhD (Member) Date Justin A. Clinton, PhD...Member) Date AFIT-ENP-13-M-10 Abstract A stacked array of segmented micro-structured semiconductor neutron detectors (MSNDs) has been fabricated to...conveniently available from radioisotopes , reactions involving incident protons, deuterons, and so on must rely on artificially accelerated particles [12

MOSFET Electric-Charge Sensor

NASA Technical Reports Server (NTRS)

Robinson, Paul A., Jr.

1988-01-01

Charged-particle probe compact and consumes little power. Proposed modification enables metal oxide/semiconductor field-effect transistor (MOSFET) to act as detector of static electric charges or energetic charged particles. Thickened gate insulation acts as control structure. During measurements metal gate allowed to "float" to potential of charge accumulated in insulation. Stack of modified MOSFET'S constitutes detector of energetic charged particles. Each gate "floats" to potential induced by charged-particle beam penetrating its layer.

Tuning the thickness of exfoliated quasi-two-dimensional β-Ga2O3 flakes by plasma etching

NASA Astrophysics Data System (ADS)

Kwon, Yongbeom; Lee, Geonyeop; Oh, Sooyeoun; Kim, Jihyun; Pearton, Stephen J.; Ren, Fan

2017-03-01

We demonstrated the thinning of exfoliated quasi-two-dimensional β-Ga2O3 flakes by using a reactive ion etching technique. Mechanical exfoliation of the bulk β-Ga2O3 by using an adhesive tape was followed by plasma etching to tune its thickness. Since β-Ga2O3 is not a van der Waals material, it is challenging to obtain ultra-thin flakes below a thickness of 100 nm. In this study, an etch rate of approximately 16 nm/min was achieved at a power of 200 W with a flow of 50 sccm of SF6, and under these conditions, thinning of β-Ga2O3 flakes from 300 nm down to ˜60 nm was achieved with smooth morphology. We believe that the reaction between SF6 and Ga2O3 results in oxygen and volatile oxygen fluoride compounds, and non-volatile compounds such as GaFX that can be removed by ion bombardment. The opto-electrical properties were also characterized by fabricating solar-blind photodetectors using the plasma-thinned β-Ga2O3 flakes; these detectors showed fast response and decay with excellent responsivity and selectivity. Our results pave the way for tuning the thickness of two-dimensional materials by using this scalable, industry-compatible dry etching technique.

High throughput on-chip analysis of high-energy charged particle tracks using lensfree imaging

DOE Office of Scientific and Technical Information (OSTI.GOV)

Luo, Wei; Shabbir, Faizan; Gong, Chao

2015-04-13

We demonstrate a high-throughput charged particle analysis platform, which is based on lensfree on-chip microscopy for rapid ion track analysis using allyl diglycol carbonate, i.e., CR-39 plastic polymer as the sensing medium. By adopting a wide-area opto-electronic image sensor together with a source-shifting based pixel super-resolution technique, a large CR-39 sample volume (i.e., 4 cm × 4 cm × 0.1 cm) can be imaged in less than 1 min using a compact lensfree on-chip microscope, which detects partially coherent in-line holograms of the ion tracks recorded within the CR-39 detector. After the image capture, using highly parallelized reconstruction and ion track analysis algorithms running on graphics processingmore » units, we reconstruct and analyze the entire volume of a CR-39 detector within ∼1.5 min. This significant reduction in the entire imaging and ion track analysis time not only increases our throughput but also allows us to perform time-resolved analysis of the etching process to monitor and optimize the growth of ion tracks during etching. This computational lensfree imaging platform can provide a much higher throughput and more cost-effective alternative to traditional lens-based scanning optical microscopes for ion track analysis using CR-39 and other passive high energy particle detectors.« less

AN ONLINE, RADIATION HARD PROTON ENERGY-RESOLVING SCINTILLATOR STACK FOR LASER-DRIVEN PROTON BUNCHES.

PubMed

Englbrecht, Franz Siegfried; Würl, Matthias; Olivari, Francesco; Ficorella, Andrea; Kreuzer, Christian; Lindner, Florian H; Palma, Matteo Dalla; Pancheri, Lucio; Betta, Gian-Franco Dalla; Schreiber, Jörg; Quaranta, Alberto; Parodi, Katia

2018-02-03

We report on a scintillator-based online detection system for the spectral characterization of polychromatic proton bunches. Using up to nine stacked layers of radiation hard polysiloxane scintillators, coupled to and readout edge-on by a large area pixelated CMOS detector, impinging polychromatic proton bunches were characterized. The energy spectra were reconstructed using calibration data and simulated using Monte-Carlo simulations. Despite the scintillator stack showed some problems like thickness inhomogeneities and unequal layer coupling, the prototype allows to obtain a first estimate of the energy spectrum of proton beams. © The Author(s) 2018. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

On the introduction of a measurement standard for high-purity germanium crystals to be used in radiation detectors

NASA Astrophysics Data System (ADS)

Darken, L.

1994-02-01

The IEEE and ANSI have recently approved "Standard Test Procedures for High-Purity Germanium Crystals for Radiation Detectors" proposed by the IEEE/NPSS/Nuclear Instruments and Detectors Committee. The standard addresses three aspects of the characterisation of high-purity germanium: (i) the determination by the van der Pauw method of the net carrier concentration and type; (ii) the measurement by capacitance transient techniques of the concentration of trapping levels; (iii) the description of the crystallographic properties revealed by preferential etching. In addition to describing the contents of this standard, the purpose of this work is also to place the issues faced in the context of professional consensus: points of agreement, points of disagreement, and subjects poorly understood.

Facial expression recognition based on improved local ternary pattern and stacked auto-encoder

NASA Astrophysics Data System (ADS)

Wu, Yao; Qiu, Weigen

2017-08-01

In order to enhance the robustness of facial expression recognition, we propose a method of facial expression recognition based on improved Local Ternary Pattern (LTP) combined with Stacked Auto-Encoder (SAE). This method uses the improved LTP extraction feature, and then uses the improved depth belief network as the detector and classifier to extract the LTP feature. The combination of LTP and improved deep belief network is realized in facial expression recognition. The recognition rate on CK+ databases has improved significantly.

Design and optimization of a novel 3D detector: The 3D-open-shell-electrode detector

NASA Astrophysics Data System (ADS)

Liu, Manwen; Tan, Jian; Li, Zheng

2018-04-01

A new type of three-dimensional (3D) detector, namely 3D-Open-Shell-Electrode Detector (3DOSED), is proposed in this study. In a 3DOSED, the trench electrode can be etched all the way through the detector thickness, totally eliminating the low electric field region existed in the conventional 3D-Trench-Electrode detector. Full 3D technology computer-aided design (TCAD) simulations have been done on this novel silicon detector structure. Through comparing of the simulation results of the detector, we can obtain the best design of the 3SOSED. In addition, simulation results show that, as compared to the conventional 3D detector, the proposed 3DOSED can improve not only detector charge collection efficiency but also its radiation hardness with regard to solving the trapping problem in the detector bulk. What is more, it has been shown that detector full depletion voltage is also slightly reduced, which can improve the utility aspects of the detector. When compared to the conventional 3D detector, we find that the proposed novel 3DOSED structure has better electric potential and electric field distributions, and better electrical properties such as detector full depletion voltage. In 3DOSED array, each pixel cell is isolated from each other by highly doped trenches, but also electrically and physically connected with each other through the remaining silicon bulk between broken electrodes.

Preliminary Results of 3D-DDTC Pixel Detectors for the ATLAS Upgrade

DOE Office of Scientific and Technical Information (OSTI.GOV)

La Rosa, Alessandro; /CERN; Boscardin, M.

2012-04-04

3D Silicon sensors fabricated at FBK-irst with the Double-side Double Type Column (DDTC) approach and columnar electrodes only partially etched through p-type substrates were tested in laboratory and in a 1.35 Tesla magnetic field with a 180 GeV pion beam at CERN SPS. The substrate thickness of the sensors is about 200 {mu}m, and different column depths are available, with overlaps between junction columns (etched from the front side) and ohmic columns (etched from the back side) in the range from 110 {mu}m to 150 {mu}m. The devices under test were bump bonded to the ATLAS Pixel readout chip (FEI3)more » at SELEX SI (Rome, Italy). We report leakage current and noise measurements, results of functional tests with Am{sup 241} {gamma}-ray sources, charge collection tests with Sr90 {beta}-source and an overview of preliminary results from the CERN beam test.« less

MBE Regrowth of a Laterally-biased Double Quantum Well Tunable Detector

DTIC Science & Technology

2010-06-01

with 9 sccm of Ar, 9 sccm of  SiCl4  and with a power of 107 W. With these parameters, DC Bias  of 340 V was obtained and the pressure during the etching...regrowth of a laterally‐biased double quantum well tunable detector– Final Report  2010  29    The etching can be performed using only  SiCl4 , but by...following AFM images show GaAs surfaces after an etching of 500nm:                125 W, 1,5 sccm Ar, 15 sccm  SiCl4   MBE regrowth of a laterally‐biased

Microchannel neural interface manufacture by stacking silicone and metal foil laminae

NASA Astrophysics Data System (ADS)

Lancashire, Henry T.; Vanhoestenberghe, Anne; Pendegrass, Catherine J.; Ajam, Yazan Al; Magee, Elliot; Donaldson, Nick; Blunn, Gordon W.

2016-06-01

Objective. Microchannel neural interfaces (MNIs) overcome problems with recording from peripheral nerves by amplifying signals independent of node of Ranvier position. Selective recording and stimulation using an MNI requires good insulation between microchannels and a high electrode density. We propose that stacking microchannel laminae will improve selectivity over single layer MNI designs due to the increase in electrode number and an improvement in microchannel sealing. Approach. This paper describes a manufacturing method for creating MNIs which overcomes limitations on electrode connectivity and microchannel sealing. Laser cut silicone—metal foil laminae were stacked using plasma bonding to create an array of microchannels containing tripolar electrodes. Electrodes were DC etched and electrode impedance and cyclic voltammetry were tested. Main results. MNIs with 100 μm and 200 μm diameter microchannels were manufactured. High electrode density MNIs are achievable with electrodes present in every microchannel. Electrode impedances of 27.2 ± 19.8 kΩ at 1 kHz were achieved. Following two months of implantation in Lewis rat sciatic nerve, micro-fascicles were observed regenerating through the MNI microchannels. Significance. Selective MNIs with the peripheral nervous system may allow upper limb amputees to control prostheses intuitively.

Three-dimensional integrated circuits for lab-on-chip dielectrophoresis of nanometer scale particles

NASA Astrophysics Data System (ADS)

Dickerson, Samuel J.; Noyola, Arnaldo J.; Levitan, Steven P.; Chiarulli, Donald M.

2007-01-01

In this paper, we present a mixed-technology micro-system for electronically manipulating and optically detecting virusscale particles in fluids that is designed using 3D integrated circuit technology. During the 3D fabrication process, the top-most chip tier is assembled upside down and the substrate material is removed. This places the polysilicon layer, which is used to create geometries with the process' minimum feature size, in close proximity to a fluid channel etched into the top of the stack. By taking advantage of these processing features inherent to "3D chip-stacking" technology, we create electrode arrays that have a gap spacing of 270 nm. Using 3D CMOS technology also provides the ability to densely integrate analog and digital control circuitry for the electrodes by using the additional levels of the chip stack. We show simulations of the system with a physical model of a Kaposi's sarcoma-associated herpes virus, which has a radius of approximately 125 nm, being dielectrophoretically arranged into striped patterns. We also discuss how these striped patterns of trapped nanometer scale particles create an effective diffraction grating which can then be sensed with macro-scale optical techniques.

Progress and process improvements for multiple electron-beam direct write

NASA Astrophysics Data System (ADS)

Servin, Isabelle; Pourteau, Marie-Line; Pradelles, Jonathan; Essomba, Philippe; Lattard, Ludovic; Brandt, Pieter; Wieland, Marco

2017-06-01

Massively parallel electron beam direct write (MP-EBDW) lithography is a cost-effective patterning solution, complementary to optical lithography, for a variety of applications ranging from 200 to 14 nm. This paper will present last process/integration results to achieve targets for both 28 and 45 nm nodes. For 28 nm node, we mainly focus on line-width roughness (LWR) mitigation by playing with stack, new resist platform and bias design strategy. The lines roughness was reduced by using thicker spin-on-carbon (SOC) hardmask (-14%) or non-chemically amplified (non-CAR) resist with bias writing strategy implementation (-20%). Etch transfer into trilayer has been demonstrated by preserving pattern fidelity and profiles for both CAR and non-CAR resists. For 45 nm node, we demonstrate the electron-beam process integration within optical CMOS flows. Resists based on KrF platform show a full compatibility with multiple stacks to fit with conventional optical flow used for critical layers. Electron-beam resist performances have been optimized to fit the specifications in terms of resolution, energy latitude, LWR and stack compatibility. The patterning process overview showing the latest achievements is mature enough to enable starting the multi-beam technology pre-production mode.

The millimeter wave super-Schottky diode detector

NASA Technical Reports Server (NTRS)

Silver, A. H.; Pedersen, R. J.; Mccoll, M.; Dickman, R. L.; Wilson, W. J.

1981-01-01

The 31 and 92 GHz measurements of the superconductor-Schottky diode extended to millimeter wavelengths by a redesign of the semiconductor interface are reported. Diodes were fabricated by pulse electroplating Pb on 2 x 10 to the 19th/cu cm p-Ga-As etched with HCl; a thin Au overplate is deposited to protect the Pb film from degradation and to improve its lifetime. The noise performance was almost ideal at 31 and 92 GHz; it was concluded that this diode is a quantum-limited-detector at 31 GHz, with excessive parasitic losses at 92 GHz.

Monopole-track characteristics in plastic detectors

NASA Technical Reports Server (NTRS)

Ahlen, S. P.

1976-01-01

Total and restricted energy loss rates are calculated for magnetic monopoles of charge g = 137 e in Lexan polycarbonate. Range-energy curves are also presented. The restricted-energy-loss model is used to estimate the appearance of a monopole track in plastic detectors. The results are applied to the event observed by Price et al. and identified by them as a monopole. It is found that the observed etch rate is consistent with what one would expect for a slow magnetic monopole. These results should also be of use to other investigators for both the design and analysis of monopole experiments.

Enhanced photo-response of porous silicon photo-detectors by embeddingTitanium-dioxide nano-particles

NASA Astrophysics Data System (ADS)

Ali, Hiba M.; Makki, Sameer A.; Abd, Ahmed N.

2018-05-01

Porous silicon (n-PS) films can be prepared by photoelectochemical etching (PECE) Silicon chips n - types with 15 (mA / cm2), in 15 minutes etching time on the fabrication nano-sized pore arrangement. By using X-ray diffraction measurement and atomic power microscopy characteristics (AFM), PS was investigated. It was also evaluated the crystallites size from (XRD) for the PS nanoscale. The atomic force microscopy confirmed the nano-metric size chemical fictionalization through the electrochemical etching that was shown on the PS surface chemical composition. The atomic power microscopy checks showed the roughness of the silicon surface. It is also notified (TiO2) preparation nano-particles that were prepared by pulse laser eradication in ethanol (PLAL) technique through irradiation with a Nd:YAG laser pulses TiO2 target that is sunk in methanol using 400 mJ of laser energy. It has been studied the structural, optical and morphological of TiO2NPs. It has been detected that through XRD measurement, (TiO2) NPs have been Tetragonal crystal structure. While with AFM measurements, it has been realized that the synthesized TiO2 particles are spherical with an average particle size in the (82 nm) range. It has been determined that the energy band gap of TiO2 NPs from optical properties and set to be in (5eV) range.The transmittance and reflectance spectra have determined the TiO2 NPs optical constants. It was reported the effectiveness of TiO2 NPs expansion on the PS Photodetector properties which exposes the benefits in (Al/PS/Si/Al). The built-in tension values depend on the etching time current density and laser flounce. Al/TiO2/PS/Si/Al photo-detector heterojunction have two response peaks that are situated at 350 nm and (700 -800nm) with max sensitivity ≈ 0.7 A/W. The maximum given detectivity is 9.38at ≈ 780 nm wavelength.

Photonic crystal scintillators and methods of manufacture

DOEpatents

Torres, Ricardo D.; Sexton, Lindsay T.; Fuentes, Roderick E.; Cortes-Concepcion, Jose

2015-08-11

Photonic crystal scintillators and their methods of manufacture are provided. Exemplary methods of manufacture include using a highly-ordered porous anodic alumina membrane as a pattern transfer mask for either the etching of underlying material or for the deposition of additional material onto the surface of a scintillator. Exemplary detectors utilizing such photonic crystal scintillators are also provided.

Applications of multi-spectral imaging: failsafe industrial flame detector

NASA Astrophysics Data System (ADS)

Wing Au, Kwong; Larsen, Christopher; Cole, Barry; Venkatesha, Sharath

2016-05-01

Industrial and petrochemical facilities present unique challenges for fire protection and safety. Typical scenarios include detection of an unintended fire in a scene, wherein the scene also includes a flare stack in the background. Maintaining a high level of process and plant safety is a critical concern. In this paper, we present a failsafe industrial flame detector which has significant performance benefits compared to current flame detectors. The design involves use of microbolometer in the MWIR and LWIR spectrum and a dual band filter. This novel flame detector can help industrial facilities to meet their plant safety and critical infrastructure protection requirements while ensuring operational and business readiness at project start-up.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bauer, Gerry; et al.

The DAQ system of the CMS experiment at CERN collects data from more than 600 custom detector Front-End Drivers (FEDs). During 2013 and 2014 the CMS DAQ system will undergo a major upgrade to address the obsolescence of current hardware and the requirements posed by the upgrade of the LHC accelerator and various detector components. For a loss-less data collection from the FEDs a new FPGA based card implementing the TCP/IP protocol suite over 10Gbps Ethernet has been developed. To limit the TCP hardware implementation complexity the DAQ group developed a simplified and unidirectional but RFC 793 compliant version ofmore » the TCP protocol. This allows to use a PC with the standard Linux TCP/IP stack as a receiver. We present the challenges and protocol modifications made to TCP in order to simplify its FPGA implementation. We also describe the interaction between the simplified TCP and Linux TCP/IP stack including the performance measurements.« less

Apparatus and method for variable angle slant hole collimator

DOEpatents

Lee, Seung Joon; Kross, Brian J.; McKisson, John E.

2017-07-18

A variable angle slant hole (VASH) collimator for providing collimation of high energy photons such as gamma rays during radiological imaging of humans. The VASH collimator includes a stack of multiple collimator leaves and a means of quickly aligning each leaf to provide various projection angles. Rather than rotate the detector around the subject, the VASH collimator enables the detector to remain stationary while the projection angle of the collimator is varied for tomographic acquisition. High collimator efficiency is achieved by maintaining the leaves in accurate alignment through the various projection angles. Individual leaves include unique angled cuts to maintain a precise target collimation angle. Matching wedge blocks driven by two actuators with twin-lead screws accurately position each leaf in the stack resulting in the precise target collimation angle. A computer interface with the actuators enables precise control of the projection angle of the collimator.

Synthesis of Freestanding Single-crystal Perovskite Films and Heterostructures by Etching of Sacrificial Water-soluble Layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, Di; Baek, David J.; Hong, Seung Sae

2016-08-22

The ability to create and manipulate materials in two-dimensional (2D) form has repeatedly had transformative impact on science and technology. In parallel with the exfoliation and stacking of intrinsically layered crystals, atomic-scale thin film growth of complex materials has enabled the creation of artificial 2D heterostructures with novel functionality and emergent phenomena, as seen in perovskite heterostructures. However, separation of these layers from the growth substrate has proven challenging, limiting the manipulation capabilities of these heterostructures with respect to exfoliated materials. Here we present a general method to create freestanding perovskite membranes. The key is the epitaxial growth of water-solublemore » Sr 3Al 2O 6 on perovskite substrates, followed by in situ growth of films and heterostructures. Millimetre-size single-crystalline membranes are produced by etching the Sr 3Al 2O 6 layer in water, providing the opportunity to transfer them to arbitrary substrates and integrate them with heterostructures of semiconductors and layered compounds.« less

Ohmic contacts to Al-rich AlGaN heterostructures

DOE PAGES

Douglas, E. A.; Reza, S.; Sanchez, C.; ...

2017-06-06

Due to the ultra-wide bandgap of Al-rich AlGaN, up to 5.8 eV for the structures in this study, obtaining low resistance ohmic contacts is inherently difficult to achieve. A comparative study of three different fabrication schemes is presented for obtaining ohmic contacts to an Al-rich AlGaN channel. Schottky-like behavior was observed for several different planar metallization stacks (and anneal temperatures), in addition to a dry-etch recess metallization contact scheme on Al 0.85Ga 0.15N/Al 0.66Ga 0.34N. However, a dry etch recess followed by n +-GaN regrowth fabrication process is reported as a means to obtain lower contact resistivity ohmic contacts onmore » a Al 0.85Ga 0.15N/Al 0.66Ga 0.34N heterostructure. In conclusion, specific contact resistivity of 5×10 -3 Ω cm 2 was achieved after annealing Ti/Al/Ni/Au metallization.« less

Cosmic dosimetry using TLD aboard spacecrafts of the "Cosmos" series

NASA Astrophysics Data System (ADS)

Hübner, K.; Schmidt, P.; Fellinger, J.

Thermoluminescent (TL) detectors were used for dosimetric investigations on the outer surface as well as inside Soviet spacecrafts of the "Cosmos" series. At the outer surface, ultrathin TL detectors, based on CaF 2-PTFE and LiF, were arranged in special stacks and exposed to unshielded cosmic radiation. The strong decrease of dose within a few mg/cm 2 demonstrates that weakly penetrating radiation is dominating in the radiation field under investigation. On the basis of glow curve analysis of LiF thermoluminescent detectors it could be shown, that the high doses are caused by electrons.

Cosmic dosimetry using TLD aboard spacecrafts of the "Cosmos" series.

PubMed

Hubner, K; Schmidt, P; Fellinger, J

1994-11-01

Thermoluminescent (TL) detectors were used for dosimetric investigations on the outer surface as well as inside Soviet spacecrafts of the "Cosmos" series. At the outer surface, ultrathin TL detectors, based on CaF2-PTFE and LiF, were arranged in special stacks and exposed to unshielded cosmic radiation. The strong decrease of dose within a few mg/cm2 demonstrates that weakly penetrating radiation is dominating in the radiation field under investigation. On the basis of glow curve analysis of LiF thermoluminescent detectors it could be shown, that the high doses are caused by electrons.

On a Three-Channel Cosmic Ray Detector based on Aluminum Blocks

NASA Astrophysics Data System (ADS)

Arceo, L.; Félix, J.

2017-10-01

There are many general purpose cosmic ray detectors based on plastic scintillators and electronic boards from the market. This is a new cosmic ray detector designed on three 2.54 cm × 5.08 cm × 20.32 cm Aluminum blocks in stack arrangement, and three Hamamatsu S12572-100P photodiodes. The photodiode board, the passive electronic board, and the discriminator board are own designed. The electronic signals are stored with a CompactRIO -cRIO- by National Instruments. It is presented the design, the construction, the data acquisition system algorithm, and the preliminary physical results.

Modeling blur in various detector geometries for MeV radiography

NASA Astrophysics Data System (ADS)

Winch, Nicola M.; Watson, Scott A.; Hunter, James F.

2017-03-01

Monte Carlo transport codes have been used to model the detector blur and energy deposition in various detector geometries for applications in MeV radiography. Segmented scintillating detectors, where low Z scintillators combined with a high-Z metal matrix, can be designed in which the resolution increases with increasing metal fraction. The combination of various types of metal intensification screens and storage phosphor imaging plates has also been studied. A storage phosphor coated directly onto a metal intensification screen has superior performance over a commercial plate. Stacks of storage phosphor plates and tantalum intensification screens show an increase in energy deposited and detective quantum efficiency with increasing plate number, at the expense of resolution. Select detector geometries were tested by comparing simulation and experimental modulation transfer functions to validate the approach.

Confocal Raman spectroscopy and AFM for evaluation of sidewalls in type II superlattice FPAs

NASA Astrophysics Data System (ADS)

Rotter, T. J.; Busani, T.; Rathi, P.; Jaeckel, F.; Reyes, P. A.; Malloy, K. J.; Ukhanov, A. A.; Plis, E.; Krishna, S.; Jaime-Vasquez, M.; Baril, N. F.; Benson, J. D.; Tenne, D. A.

2015-06-01

We propose to utilize confocal Raman spectroscopy combined with high resolution atomic force microscopy (AFM) for nondestructive characterisation of the sidewalls of etched and passivated small pixel (24 μm×24 μm) focal plane arrays (FPA) fabricated using LW/LWIR InAs/GaSb type-II strained layer superlattice (T2SL) detector material. Special high aspect ratio Si and GaAs AFM probes, with tip length of 13 μm and tip aperture less than 7°, allow characterisation of the sidewall morphology. Confocal microscopy enables imaging of the sidewall profile through optical sectioning. Raman spectra measured on etched T2SL FPA single pixels enable us to quantify the non-uniformity of the mesa delineation process.

Line roughness improvements on self-aligned quadruple patterning by wafer stress engineering

NASA Astrophysics Data System (ADS)

Liu, Eric; Ko, Akiteru; Biolsi, Peter; Chae, Soo Doo; Hsieh, Chia-Yun; Kagaya, Munehito; Lee, Choongman; Moriya, Tsuyoshi; Tsujikawa, Shimpei; Suzuki, Yusuke; Okubo, Kazuya; Imai, Kiyotaka

2018-04-01

In integrated circuit and memory devices, size shrinkage has been the most effective method to reduce production cost and enable the steady increment of the number of transistors per unit area over the past few decades. In order to reduce the die size and feature size, it is necessary to minimize pattern formation in the advance node development. In the node of sub-10nm, extreme ultra violet lithography (EUV) and multi-patterning solutions based on 193nm immersionlithography are the two most common options to achieve the size requirement. In such small features of line and space pattern, line width roughness (LWR) and line edge roughness (LER) contribute significant amount of process variation that impacts both physical and electrical performances. In this paper, we focus on optimizing the line roughness performance by using wafer stress engineering on 30nm pitch line and space pattern. This pattern is generated by a self-aligned quadruple patterning (SAQP) technique for the potential application of fin formation. Our investigation starts by comparing film materials and stress levels in various processing steps and material selection on SAQP integration scheme. From the cross-matrix comparison, we are able to determine the best stack of film selection and stress combination in order to achieve the lowest line roughness performance while obtaining pattern validity after fin etch. This stack is also used to study the step-by-step line roughness performance from SAQP to fin etch. Finally, we will show a successful patterning of 30nm pitch line and space pattern SAQP scheme with 1nm line roughness performance.

Mechanical Designs and Developement of Advanced ACT: A Transfomative Upgrade to the ACTPol Receiver on the Atacama Cosmology Telescope.

NASA Astrophysics Data System (ADS)

Ward, Jonathan; Advanced ACT Collaboration, NASA Space Technology Research Fellowship

2017-06-01

The Atacama Cosmology Telescope is a six-meter diameter telescope located at 17,000 feet (5,200 meters) on Cerro Toco in the Andes Mountains of northern Chile. The next generation Advanced ACT (AdvACT) experiment is currently underway and will consist of three multichroic TES bolometer arrays operating together, totaling 5800 detectors on the sky. Each array will be sensitive to two frequency bands: a high frequency (HF) array at 150 and 230 GHz, two middle frequency (MF) arrays at 90 and 150 GHz, and a low frequency (LF) array at 28 and 41 GHz. The AdACT detector arrays will feature a revamped design when compared to ACTPol, including a transition to 150mm wafers equipped with multichroic pixels, allowing for a more densely packed focal plane. Each set of detectors consists of a feedhorn array of stacked silicon wafers which form a corrugated profile leading to each pixel. This is then followed by a four-piece detector stack assembly of silicon wafers which includes a waveguide interface plate, detector wafer, backshort cavity plate, and backshort cap. Each array is housed in a custom designed structure manufactured out of gold-plated, high purity copper. In addition to the detector array assembly, the array package also encloses the majority of our readout electronics. We present the full mechanical design of the AdvACT HF and MF detector array packages along with a detailed look at the detector array assemblies. We also highlight the use of continuously rotating warm half-wave plates (HWPs) at the front of the AdvACT receiver. We review the design of the rotation system and also early pipeline data analysis results. This experiment will also make use of extensive hardware and software previously developed for ACT, which will be modified to incorporate the new AdvACT instruments. Therefore, we discuss the integration of all AdvACT instruments with pre-existing ACTPol infrastructure.

Realization of deep 3D metal electrodes in diamond radiation detectors

NASA Astrophysics Data System (ADS)

Wulz, Thomas; Gerding, William; Lavrik, Nickolay; Briggs, Dayrl; Srijanto, Bernadeta; Lester, Kevin; Hensley, Dale; Spanier, Stefan; Lukosi, Eric

2018-05-01

A fabrication technique to create 3D diamond detectors is presented. Deep reactive ion etching was used to create an array of through-diamond vias (TDVs) in a 2 × 2 × 0.15 mm3 electronic grade single crystal diamond detector. The diameter of the TDVs was nominally 30 μm with a pitch of 100 μm between them. The TDVs were filled with chromium using hexavalent chromium electroplating to create 3D electrodes, which were connected electrically by interdigitated electrodes. The fabricated 3D diamond detector responded to both alpha particles and X-rays, exhibiting a charge collection efficiency of 52.3% at 200 V. Comparing to a diamond detector with the same interdigitated electrodes, but no 3D electrodes, confirms that the 3D electrodes are electrically active within the device. The average resistivity of the 3D electrodes is 2.89 ± 0.03 × 10-5 Ω cm, near that of bulk chromium. These results indicate that this fabrication technique is a potential option for 3D diamond detector fabrication.

Lead and uranium group abundances in cosmic rays

NASA Technical Reports Server (NTRS)

Yadav, J. S.; Perelygin, V. P.

1985-01-01

The importance of Lead and Uranium group abundances in cosmic rays is discussed in understanding their evolution and propagation. The electronic detectors can provide good charge resolution but poor data statistics. The plastic detectors can provide somewhat better statistics but charge resolution deteriorates. The extraterrestrial crystals can provide good statistics but with poor charge resolution. Recent studies of extraterrestrial crystals regarding their calibration to accelerated uranium ion beam and track etch kinetics are discussed. It is hoped that a charge resolution of two charge units can be achieved provided an additional parameter is taken into account. The prospects to study abundances of Lead group, Uranium group and superheavy element in extraterrestrial crystals are discussed, and usefulness of these studies in the light of studies with electronic and plastic detectors is assessed.

Charge, energy and LET spectra of high LET primary and secondary particles in CR-39 plastic nuclear track detectors of the P0006 experiment

NASA Technical Reports Server (NTRS)

Csige, I.; Frigo, L. A.; Benton, E. V.; Oda, K.

1995-01-01

We have measured the charge, energy and linear energy transfer (LET) spectra of about 800 high LET (LET(sub infinity) H2O greater than 50 keV/micron) particles in CR-39 plastic nuclear track detectors in the P0006 experiment of LDEF. Primary particles with residual range at the reference surface greater than about 2 microns and secondary particles produced in the detector material with total range greater than about 4 microns were measured. We have used a multi-etch technique and an internal calibration to identify and measure the energy of the particles at the reference surface. The LET spectrum was obtained from the charge and energy distribution of the particles.

Measurements of proton energy spectra using a radiochromic film stack

NASA Astrophysics Data System (ADS)

Filkins, T. M.; Steidle, Jessica; Ellison, D. M.; Steidle, Jeffrey; Freeman, C. G.; Padalino, S. J.; Fiksel, G.; Regan, S. P.; Sangster, T. C.

2014-10-01

The energy spectrum of protons accelerated from the rear-side of a thin foil illuminated with ultra-intense laser light from the OMEGA EP laser system at the University of Rochester's Laboratory for Laser Energetics (LLE) was measured using a stack of radiochromic film (RCF). The film stack consisted of four layers of Gafchromic HD-V2 film and four layers of Gafchromic MD-V2-55 film. Aluminum foils of various thicknesses were placed between each piece of RCF in the stack. This arrangement allowed protons with energies of 30 MeV to reach the back layer of RCF in the stack. The stack was placed in the detector plane of a Thomson parabola ion energy (TPIE) spectrometer. Each piece of film in the stack was scanned using a commercially available flat-bed scanner (Epson 10000XL). The resulting optical density was converted into proton fluence using an absolute calibration of the RCF obtained at the SUNY Geneseo 1.7 MV Pelletron accelerator laboratory. In these calibration measurements, the sensitivity of the radiochromic film was measured using monoenergetic protons produced by the accelerator. Details of the analysis procedure and the resulting proton energy spectra will be presented. Funded in part by a grant from the DOE through the Laboratory for Laser Energetics.

Computer program TRACK_TEST for calculating parameters and plotting profiles for etch pits in nuclear track materials

NASA Astrophysics Data System (ADS)

Nikezic, D.; Yu, K. N.

2006-01-01

A computer program called TRACK_TEST for calculating parameters (lengths of the major and minor axes) and plotting profiles in nuclear track materials resulted from light-ion irradiation and subsequent chemical etching is described. The programming steps are outlined, including calculations of alpha-particle ranges, determination of the distance along the particle trajectory penetrated by the chemical etchant, calculations of track coordinates, determination of the lengths of the major and minor axes and determination of the contour of the track opening. Descriptions of the program are given, including the built-in V functions for the two commonly employed nuclear track materials commercially known as LR 115 (cellulose nitrate) and CR-39 (poly allyl diglycol carbonate) irradiated by alpha particles. Program summaryTitle of the program:TRACK_TEST Catalogue identifier:ADWT Program obtainable from:CPC Program Library, Queen's University of Belfast, N. Ireland Program summary URL:http://cpc.cs.qub.ac.uk/summaries/ADWT Computer:Pentium PC Operating systems:Windows 95+ Programming language:Fortran 90 Memory required to execute with typical data:256 MB No. of lines in distributed program, including test data, etc.: 2739 No. of bytes in distributed program, including test data, etc.:204 526 Distribution format:tar.gz External subprograms used:The entire code must be linked with the MSFLIB library Nature of problem: Fast heavy charged particles (like alpha particles and other light ions etc.) create latent tracks in some dielectric materials. After chemical etching in aqueous NaOH or KOH solutions, these tracks become visible under an optical microscope. The growth of a track is based on the simultaneous actions of the etchant on undamaged regions (with the bulk etch rate V) and along the particle track (with the track etch rate V). Growth of the track is described satisfactorily by these two parameters ( V and V). Several models have been presented in the past describing the track development, one of which is the model of Nikezic and Yu (2003) [D. Nikezic, K.N. Yu, Three-dimensional analytical determination of the track parameters. Over-etched tracks, Radiat. Meas. 37 (2003) 39-45] used in the present program. The present computer program has been written to calculate coordinates of points on the track wall and to determine other relevant track parameters. Solution method:Coordinates of points on the track wall assuming normal incidence were calculated by using the method as described by Fromm et al. (1988) [M. Fromm, A. Chambaudet, F. Membrey, Data bank for alpha particle tracks in CR39 with energies ranging from 0.5 to 5 MeV recording for various incident angles, Nucl. Tracks Radiat. Meas. 15 (1988) 115-118]. The track is then rotated through the incident angle in order to obtain the coordinates of the oblique track [D. Nikezic, K.N. Yu, Three-dimensional analytical determination of the track parameters. Over-etched tracks, Radiat. Meas. 37 (2003) 39-45; D. Nikezic, Three dimensional analytical determination of the track parameters, Radiat. Meas. 32 (2000) 277-282]. In this way, the track profile in two dimensions (2D) was obtained. In the next step, points in the track wall profile are rotated around the particle trajectory. In this way, circles that outline the track in three dimensions (3D) are obtained. The intersection between the post-etching surface of the detector and the 3D track is the track opening (or the track contour). Coordinates of the track 2D and 3D profiles and the track opening are saved in separate output data files. Restrictions: The program cannot calculate track parameters for the incident angle of exactly 90°. The alpha-particle energy should be smaller than 10 MeV. Furthermore, the program cannot perform calculations for tracks in some extreme cases, such as for very low incident energies or very small incident angles. Additional comments: This is a freeware, but publications arising from using this program should cite the present paper and the paper describing the track growth model [D. Nikezic, K.N. Yu, Three-dimensional analytical determination of the track parameters. Over-etched tracks, Radiat. Meas. 37 (2003) 39-45]. Moreover, the references for the V functions used should also be cited. For the CR-39 detector: Function (1): S.A. Durrani, R.K. Bull, Solid State Nuclear Track Detection. Principles, Methods and Applications, Pergamon Press, 1987. Function (2): C. Brun, M. Fromm, M. Jouffroy, P. Meyer, J.E. Groetz, F. Abel, A. Chambaudet, B. Dorschel, D. Hermsdorf, R. Bretschneider, K. Kadner, H. Kuhne, Intercomparative study of the detection characteristics of the CR-39 SSNTD for light ions: Present status of the Besancon-Dresden approaches, Radiat. Meas. 31 (1999) 89-98. Function (3): K.N. Yu, F.M.F. Ng, D. Nikezic, Measuring depths of sub-micron tracks in a CR-39 detector from replicas using atomic force microscopy, Radiat. Meas. 40 (2005) 380-383. For the LR 115 detector: Function (1): S.A. Durrani, P.F. Green, The effect of etching conditions on the response of LR 115, Nucl. Tracks 8 (1984) 21-24. Function (2): C.W.Y. Yip, D. Nikezic, J.P.Y Ho, K.N. Yu, Chemical etching characteristics for cellulose nitrate, Mat. Chem. Phys. 95 (2005) 307-312. Running time: Order of several minutes, dependent on input parameters and the resolution requested by the user.

Radiochromic film diagnostics for laser-driven ion beams

NASA Astrophysics Data System (ADS)

Kaufman, J.; Margarone, Daniele; Candiano, Giacomo; Kim, I. Jong; Jeong, Tae Moon; Pšikal, Jan; Romano, F.; Cirrone, P.; Scuderi, V.; Korn, Georg

2015-05-01

Radiochromic film (RCF) based multichannel diagnostics utilizes the concept of a stack detector comprised of alternating layers of RCFs and shielding aluminium layers. An algorithm based on SRIM simulations is used to correct the accumulated dose. Among the standard information that can be obtained is the maximum ion energy and to some extend the beam energy spectrum. The main area where this detector shines though is the geometrical characterization of the beam. Whereas other detectors such as Thomson parabola spectrometer or Faraday cups detect only a fraction of the outburst cone, the RCF stack placed right behind the target absorbs the whole beam. A complete 2D and to some extend 3D imprint of the ion beam allows us to determine parameters such as divergence or beam center shift with respect to the target normal. The obvious drawback of such diagnostics is its invasive character. But considering that only a few successful shots (2-3) are needed per one kind of target to perform the analysis, the drawbacks are acceptable. In this work, we present results obtained with the RCF diagnostics using both conventional accelerators and laser-driven ion beams during 2 experimental campaigns.

Proton and Electron Threshold Energy Measurements for Extravehicular Activity Space Suits. Chapter 2

NASA Technical Reports Server (NTRS)

Moyers, M. F.; Nelson, G. D.; Saganti, P. B.

2003-01-01

Construction of ISS will require more than 1000 hours of EVA. Outside of ISS during EVA, astronauts and cosmonauts are likely to be exposed to a large fluence of electrons and protons. Development of radiation protection guidelines requires the determination of the minimum energy of electrons and protons that penetrate the suits at various locations. Measurements of the water-equivalent thickness of both US. and Russian EVA suits were obtained by performing CT scans. Specific regions of interest of the suits were further evaluated using a differential range shift technique. This technique involved measuring thickness ionization curves for 6-MeV electron and 155-MeV proton beams with ionization chambers using a constant source-to-detector distance. The thicknesses were obtained by stacking polystyrene slabs immediately upstream of the detector. The thicknesses of the 50% ionizations relative to the maximum ionizations were determined. The detectors were then placed within the suit and the stack thickness adjusted until the 50% ionization was reestablished. The difference in thickness between the 50% thicknesses was then used with standard range-energy tables to determine the threshold energy for penetration. This report provides a detailed description of the experimental arrangement and results.

CHARGE SPECTRUM OF HEAVY AND SUPERHEAVY COMPONENTS OF GALACTIC COSMIC RAYS: RESULTS OF THE OLIMPIYA EXPERIMENT

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alexeev, Victor; Kalinina, Galina; Pavlova, Tatyana, E-mail: aval37@mail.ru, E-mail: gakalin@mail.ru, E-mail: pavlova4tat@mail.ru

2016-10-01

The aim of the OLIMPIYA experiment is to search for and identify traces of heavy and superheavy nuclei of galactic cosmic rays (GCR) in olivine crystals from stony–iron meteorites serving as nuclear track detectors. The method is based on layer-by-layer grinding and etching of particle tracks in these crystals. Unlike the techniques of other authors, this annealing-free method uses two parameters: the etching rate along the track ( V {sub etch}) and the total track length ( L ), to identify charge Z of a projectile. A series of irradiations with different swift heavy ions at the accelerator facilities ofmore » GSI (Darmstadt) and IMP (Lanzhou) were performed in order to determine and calibrate the dependence of projectile charge on V {sub etch} and L . To date, one of the most essential results of the experiment is the obtained charge spectrum of GCR nuclei within the range of Z > 40, based on about 11.6 thousand processed tracks. As the result of data processing, 384 nuclei with charges Z ≥ 75 have been identified, including 10 nuclei identified as actinides (90 < Z < 103). Three tracks were identified to be produced by nuclei with charges 113 < Z < 129. Such nuclei may be part of the Island of Stability of transfermium elements.« less

Measurement of trapped proton fluences in main stack of P0006 experiment

NASA Technical Reports Server (NTRS)

Nefedov, N.; Csige, I.; Benton, E. V.; Henke, R. P.; Benton, E. R.; Frigo, L. A.

1995-01-01

We have measured directional distribution and Eastward directed mission fluence of trapped protons at two different energies with plastic nuclear track detectors (CR-39 with DOP) in the main stack of the P0006 experiment on LDEF. Results show arriving directions of trapped protons have very high anisotropy with most protons arriving from the West direction. Selecting these particles we have determined the mission fluence of Eastward directed trapped protons. We found experimental fluences are slightly higher than results of the model calculations of Armstrong and Colborn.

A new design using GEM-based technology for the CMS experiment

NASA Astrophysics Data System (ADS)

Ressegotti, M.

2017-07-01

The muon system of the Compact Muon Solenoid (CMS) experiment at the LHC is currently not instrumented for pseudorapidity higher than |η|> 2.4. The main challenges to the installation of a detector in that position are the high particle flux to be sustained, a high level of radiation, and the ability to accomodate a multilevel detector into the small available space (less than 30 cm). A new back-to-back configuration of a Gas Electron Multiplier (GEM) detector is presented with the aim of developing a compact, multi-layer GEM detector. It is composed of two independent stacked triple-GEM detectors, positioned with the anodes toward the outside and sharing the same cathode plane, which is located at the center of the chamber, to reduce the total detector's thickness. A first prototype has been produced and tested with an X-Ray source and muon beam. First results on its performance are presented.

MCP detector development for UV space missions

NASA Astrophysics Data System (ADS)

Conti, Lauro; Barnstedt, Jürgen; Hanke, Lars; Kalkuhl, Christoph; Kappelmann, Norbert; Rauch, Thomas; Stelzer, Beate; Werner, Klaus; Elsener, Hans-Rudolf; Schaadt, Daniel M.

2018-04-01

We are developing imaging and photon counting UV-MCP detectors, which are sensitive in the wavelength range from far ultraviolet to near ultraviolet. A good quantum efficiency, solar blindness and high spatial resolution is the aim of our development. The sealed detector has a Cs-activated photoactive layer of GaN (or similarly advanced photocathode), which is operated in semitransparent mode on (001)-MgF2. The detector comprises a stack of two long-life MCPs and a coplanar cross strip anode with advanced readout electronics. The main challenge is the flawless growth of the GaN photocathode layer as well as the requirements for the sealing of the detector, to prevent a degradation of the photocathode. We present here the detector concept and the experimental setup, examine in detail the status in the production and describe the current status of the readout electronics development.

Oxidation/reduction reactions at the metal contact-TlBr interface: an x-ray photoelectron spectroscopy study

NASA Astrophysics Data System (ADS)

Nelson, A. J.; Swanberg, E. L.; Voss, L. F.; Graff, R. T.; Conway, A. M.; Nikolic, R. J.; Payne, S. A.; Kim, H.; Cirignano, L.; Shah, K.

2014-09-01

TlBr radiation detector operation degrades with time at room temperature and is thought to be due to electromigration of Tl and Br vacancies within the crystal as well as the metal contacts migrating into the TlBr crystal itself due to electrochemical reactions at the metal/TlBr interface. X-ray photoemission spectroscopy (XPS) was used to investigate the metal contact surface/interfacial structure on TlBr devices. Device-grade TlBr was polished and subjected to a 32% HCl etch to remove surface damage prior to Mo or Pt contact deposition. High-resolution photoemission measurements on the Tl 4f, Br 3d, Cl 2p, Mo 3d and Pt 4f core lines were used to evaluate surface chemistry and non-equilibrium interfacial diffusion. Results indicate that anion substitution at the TlBr surface due to the HCl etch forms TlBr1-xClx with consequent formation of a shallow heterojunction. In addition, a reduction of Tl1+ to Tl0 is observed at the metal contacts after device operation in both air and N2 at ambient temperature. Understanding contact/device degradation versus operating environment is useful for improving radiation detector performance.

Low level determination of (226)Ra in water using a micro-precipitate track method for large-scale environmental monitoring.

PubMed

Taheri, M; Sohrabi, M; Jaleh, B; Hosseini, T; Montazer Rahmati, M M

2009-12-01

In the present paper a method has been developed for the determination of (226)Ra in water by the detection, using a solid-state nuclear track detector (SSNTD), of alpha particles from (226)Ra in equilibrium with (222)Rn in micro-precipitates collected on a filter. The micro-precipitates were prepared from environmental water samples by collection of radium with lead as Pb/RaSO(4). Several factors affect the (226)Ra precipitation on the filter and its recovery, in particular the filter pore size. Therefore in this experiment Whatman #42 and Millipore filters with different pore sizes were used. Using a 0.45 microm Millipore filter, the recovery efficiency was increased up to 96%, and the alpha self-absorption and scattering decreased remarkably. For efficient detection of alphas from (226)Ra/(222)Rn in equilibrium, three types of SSNTD were used-polycarbonate (PC) electrochemically etched (ECE), CR-39 and LR-115 chemically etched (CE). By preparing a standard micro-precipitate on a filter with known (226)Ra/(222)Rn characteristics, the calibration response of each detector and its minimum detection limit (MDL) were determined.

Large area thinned planar sensors for future high-luminosity-LHC upgrades

NASA Astrophysics Data System (ADS)

Wittig, T.; Lawerenz, A.; Röder, R.

2016-12-01

Planar hybrid silicon sensors are a well proven technology for past and current particle tracking detectors in HEP experiments. However, the future high-luminosity upgrades of the inner trackers at the LHC experiments pose big challenges to the detectors. A first challenge is an expected radiation damage level of up to 2ṡ 1016 neq/cm2. For planar sensors, one way to counteract the charge loss and thus increase the radiation hardness is to decrease the thickness of their active area. A second challenge is the large detector area which has to be built as cost-efficient as possible. The CiS research institute has accomplished a proof-of-principle run with n-in-p ATLAS-Pixel sensors in which a cavity is etched to the sensor's back side to reduce its thickness. One advantage of this technology is the fact that thick frames remain at the sensor edges and guarantee mechanical stability on wafer level while the sensor is left on the resulting thin membrane. For this cavity etching technique, no handling wafers are required which represents a benefit in terms of process effort and cost savings. The membranes with areas of up to ~ 4 × 4 cm2 and thicknesses of 100 and 150 μm feature a sufficiently good homogeneity across the whole wafer area. The processed pixel sensors show good electrical behaviour with an excellent yield for a suchlike prototype run. First sensors with electroless Ni- and Pt-UBM are already successfully assembled with read-out chips.

A parameterization of nuclear track profiles in CR-39 detector

NASA Astrophysics Data System (ADS)

Azooz, A. A.; Al-Nia'emi, S. H.; Al-Jubbori, M. A.

2012-11-01

In this work, the empirical parameterization describing the alpha particles’ track depth in CR-39 detectors is extended to describe longitudinal track profiles against etching time for protons and alpha particles. MATLAB based software is developed for this purpose. The software calculates and plots the depth, diameter, range, residual range, saturation time, and etch rate versus etching time. The software predictions are compared with other experimental data and with results of calculations using the original software, TRACK_TEST, developed for alpha track calculations. The software related to this work is freely downloadable and performs calculations for protons in addition to alpha particles. Program summary Program title: CR39 Catalog identifier: AENA_v1_0 Program summary URL:http://cpc.cs.qub.ac.uk/summaries/AENA_v1_0.html Program obtainable from: CPC Program Library, Queen’s University, Belfast, N. Ireland Licensing provisions: Copyright (c) 2011, Aasim Azooz Redistribution and use in source and binary forms, with or without modification, are permitted provided that the following conditions are met • Redistributions of source code must retain the above copyright, this list of conditions and the following disclaimer. • Redistributions in binary form must reproduce the above copyright notice, this list of conditions and the following disclaimer in the documentation and/or other materials provided with the distribution This software is provided by the copyright holders and contributors “as is” and any express or implied warranties, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose are disclaimed. In no event shall the copyright owner or contributors be liable for any direct, indirect, incidental, special, exemplary, or consequential damages (including, but not limited to, procurement of substitute goods or services; loss of use, data, or profits; or business interruption) however caused and on any theory of liability, whether in contract, strict liability, or tort (including negligence or otherwise) arising in any way out of the use of this software, even if advised of the possibility of such damage. No. of lines in distributed program, including test data, etc.: 15598 No. of bytes in distributed program, including test data, etc.: 3933244 Distribution format: tar.gz Programming language: MATLAB. Computer: Any Desktop or Laptop. Operating system: Windows 1998 or above (with MATLAB R13 or above installed). RAM: 512 Megabytes or higher Classification: 17.5. Nature of problem: A new semispherical parameterization of charged particle tracks in CR-39 SSNTD is carried out in a previous paper. This parameterization is developed here into a MATLAB based software to calculate the track length and track profile for any proton or alpha particle energy or etching time. This software is intended to compete with the TRACK_TEST [1] and TRACK_VISION [2] software currently in use by all people working in the field of SSNTD. Solution method: Based on fitting of experimental results of protons and alpha particles track lengths for various energies and etching times to a new semispherical formula with four free fitting parameters, the best set of energy independent parameters were found. These parameters are introduced into the software and the software is programmed to solve the set of equations to calculate the track depth, track etching rate as a function of both time and residual range for particles of normal and oblique incidence, the track longitudinal profile at both normal and oblique incidence, and the three dimensional track profile at normal incidence. Running time: 1-8 s on Pentium (4) 2 GHz CPU, 3 GB of RAM depending on the etching time value References: [1] ADWT_v1_0 Track_Test Computer program TRACK_TEST for calculating parameters and plotting profiles for etch pits in nuclear track materials. D. Nikezic, K.N. Yu Comput. Phys. Commun. 174(2006)160 [2] AEAF_v1_0 TRACK_VISION Computer program TRACK_VISION for simulating optical appearance of etched tracks in CR-39 nuclear track detectors. D. Nikezic, K.N. Yu Comput. Phys. Commun. 178(2008)591

SHMS Hodoscopes and Time of Flight System

NASA Astrophysics Data System (ADS)

Craycraft, Kayla; Malace, Simona

2017-09-01

As part of the Thomas Jefferson National Accelerator Facility's (Jefferson Lab) upgrade from 6 GeV to 12 GeV, a new magnetic focusing spectrometer, the Super High Momentum Spectrometer (SHMS), was installed in experimental Hall C. The detector stack consists of horizontal drift chambers for tracking, gas Cerenkov and Aerogel detectors and a lead glass calorimeter for particle identification. A hodoscope system consisting of three planes of scintillator detectors (constructed by James Madison University) and one plane of quartz bars (built by North Carolina A&T State University) is used for triggering and time of flight measurements. This presentation consists of discussion of the installation, calibration, and characterization of the detectors used in this Time of Flight system. James Madison University, North Carolina A&T State University.

Multi-terminal Two-color ZnCdSe/ZnCdMgSe Based Quantum-well Infrared Photodetector

NASA Astrophysics Data System (ADS)

Kaya, Yasin; Ravikumar, Arvind; Chen, Guopeng; Tamargo, Maria C.; Shen, Aidong; Gmachl, Claire

Target recognition and identification applications benefits from two-color infrared (IR) detectors in the mid and long-wavelength IR regions. Currently, InGaAs/AlGaAs and GaAs/AlGaAs multiple quantum wells (QWs) grown on GaAs substrate are the most commonly used two-color QW IR photodetectors (QWIPs). However, the lattice-mismatch and the buildup of strain limit the number of QWs that can be grown, in turn increasing the dark current noise, and limiting the device detectivity.In this work, we report on two-color QWIPs based on the large conduction band offset (~1.12ev) ZnCdSe/ZnCdMgSe material system lattice matched to InP. QWIPs were designed based on a bound to quasi-bound transition, centered at 4 μm and 7 μm and each QW is repeated 50 times to eliminate the high dark current and a contact layer is inserted between the two stacks of QWs for independent electrical contacts. Wafers are processed into two step rectangular mesas by lithography and wet etching. Experiments showed absorption spectra centered at 4.9 μm and 7.6 μm at 80 K and the full width at half maximums were Δλ / λ = 21 % and Δλ / λ = 23 % , respectively. Current work studies the Johnson and the background noise limited detectivities of these QWIPs. Current address: School of Earth, Energy and Environmental Sciences, Stanford, CA 94305, USA.

Characterization of V-shaped defects in 4H-SiC homoepitaxial layers

DOE PAGES

Zhang, Lihua; Su, Dong; Kisslinger, Kim; ...

2014-12-04

Synchrotron white beam x-ray topography images show that faint needle-like surface morphological features observed on the Si-face of 4H-SiC homoepitaxial layers using Nomarski optical microscopy are associated with V shaped stacking faults in the epilayer. KOH etching of the V shaped defect reveals small oval pits connected by a shallow line which corresponding to the surface intersections of two partial dislocations and the stacking fault connecting them. Transmission electron microscopy (TEM) specimens from regions containing the V shaped defects were prepared using focused ion beam milling, and stacking sequences of (85), (50) and (63) are observed at the faulted regionmore » with high resolution TEM. In order to study the formation mechanism of V shaped defect, low dislocation density 4H-SiC substrates were chosen for epitaxial growth, and the corresponding regions before and after epitaxy growth are compared in SWBXT images. It is found that no defects in the substrate are directly associated with the formation of the V shaped defect. Simulation results of the contrast from the two partial dislocations associated with V shaped defect in synchrotron monochromatic beam x-ray topography reveals the opposite sign nature of their Burgers vectors. Therefore, a mechanism of 2D nucleation during epitaxy growth is postulated for the formation of the V shaped defect, which requires elimination of non-sequential 1/4[0001] bilayers from the original structure to create the observed faulted stacking sequence.« less

Characterization of V-shaped defects in 4H-SiC homoepitaxial layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Lihua; Su, Dong; Kisslinger, Kim

Synchrotron white beam x-ray topography images show that faint needle-like surface morphological features observed on the Si-face of 4H-SiC homoepitaxial layers using Nomarski optical microscopy are associated with V shaped stacking faults in the epilayer. KOH etching of the V shaped defect reveals small oval pits connected by a shallow line which corresponding to the surface intersections of two partial dislocations and the stacking fault connecting them. Transmission electron microscopy (TEM) specimens from regions containing the V shaped defects were prepared using focused ion beam milling, and stacking sequences of (85), (50) and (63) are observed at the faulted regionmore » with high resolution TEM. In order to study the formation mechanism of V shaped defect, low dislocation density 4H-SiC substrates were chosen for epitaxial growth, and the corresponding regions before and after epitaxy growth are compared in SWBXT images. It is found that no defects in the substrate are directly associated with the formation of the V shaped defect. Simulation results of the contrast from the two partial dislocations associated with V shaped defect in synchrotron monochromatic beam x-ray topography reveals the opposite sign nature of their Burgers vectors. Therefore, a mechanism of 2D nucleation during epitaxy growth is postulated for the formation of the V shaped defect, which requires elimination of non-sequential 1/4[0001] bilayers from the original structure to create the observed faulted stacking sequence.« less

Three outer arm dynein heavy chains of Chlamydomonas reinhardtii operate in a coordinated fashion both in vitro and in vivo.

PubMed

Takazaki, Hiroko; Liu, Zhongmei; Jin, Mingyue; Kamiya, Ritsu; Yasunaga, Takuo

2010-07-01

Outer arm dynein (OAD) in cilia and flagella contains two to three nonidentical heavy chains (HCs) that possess motor activity. In Chlamydomonas, flagellar OAD contains three HCs, alpha-, beta-, and gamma-HCs, each appearing to have a distinct role. To determine the precise molecular mechanism of their function, cross-sectional electron micrographs of wild-type and single HC-disruption mutants were compared and statistically analyzed. While the alpha-HC mutant displayed an OAD of lower density, which was attributed to a lack of alpha-HC, the OAD of beta- and gamma-HC mutants not only lacked the corresponding HC, but was also significantly affected in its structure, particularly with respect to the localization of alpha-HC. The lack of beta-HC induced mislocalization of alpha-HC, while a disruption of the gamma-HC gene resulted in the synchronized movement of alpha-HC and beta-HC in the manners for stacking. Interestingly, using cryo-electron microscopy, purified OADs were typically observed consisting of two stacked heads and an independent single head, which presumably corresponded to gamma-HC. This conformation is different from previous reports in which the three HCs displayed a stacked form in flagella observed by cryo-electron tomography and a bouquet structure on mica in deep-etch replica images. These results suggest that gamma-HC supports the tight stacking arrangement of inter or intra alpha-/beta-HC to facilitate the proper functioning of OAD. 2010 Wiley-Liss, Inc.

Taheri-Saramad x-ray detector (TSXD): a novel high spatial resolution x-ray imager based on ZnO nano scintillator wires in polycarbonate membrane.

PubMed

Taheri, A; Saramad, S; Ghalenoei, S; Setayeshi, S

2014-01-01

A novel x-ray imager based on ZnO nanowires is designed and fabricated. The proposed architecture is based on scintillation properties of ZnO nanostructures in a polycarbonate track-etched membrane. Because of higher refractive index of ZnO nanowire compared to the membrane, the nanowire acts as an optical fiber that prevents the generated optical photons to spread inside the detector. This effect improves the spatial resolution of the imager. The detection quantum efficiency and spatial resolution of the fabricated imager are 11% and <6.8 μm, respectively.

Microchannel Plates for the UVCS and SUMER Instruments on the SOHO Satellite

NASA Technical Reports Server (NTRS)

Siegmund, O. H. W.; Gummin, M. A.; Sasseen, T.; Jelinsky, P.; Gaines, G. A.; Hull, J.; Stock, J. M.; Edgar, M.; Welsh, B.; Jelinsky, S.;

Mass spectrometry analysis of etch products from CR-39 plastic irradiated by heavy ions

NASA Astrophysics Data System (ADS)

Kodaira, S.; Nanjo, D.; Kawashima, H.; Yasuda, N.; Konishi, T.; Kurano, M.; Kitamura, H.; Uchihori, Y.; Naka, S.; Ota, S.; Ideguchi, Y.; Hasebe, N.; Mori, Y.; Yamauchi, T.

2012-09-01

As a feasibility study, gas chromatography-mass spectrometry (GC-MS) and matrix-assisted laser desorption ionization-mass spectrometry (MALDI-MS) have been applied to analyze etch products of CR-39 plastic (one of the most frequently used solid states nuclear track detector) for the understanding of track formation and etching mechanisms by heavy ion irradiation. The etch products of irradiated CR-39 dissolved in sodium hydroxide solution (NaOH) contain radiation-induced fragments. For the GC-MS analysis, we found peaks of diethylene glycol (DEG) and a small but a definitive peak of ethylene glycol (EG) in the etch products from CR-39 irradiated by 60 MeV N ion beams. The etch products of unirradiated CR-39 showed a clear peak of DEG, but no other significant peaks were found. DEG is known to be released from the CR-39 molecule as a fragment by alkaline hydrolysis reaction of the polymer. We postulate that EG was formed as a result of the breaking of the ether bond (C-O-C) of the DEG part of the CR-39 polymer by the irradiation. The mass distribution of polyallylalcohol was obtained from the etch products from irradiated and unirradiated CR-39 samples by MALDI-MS analysis. Polyallylalcohol, with the repeating mass interval of m/z = 58 Da (dalton) between m/z = 800 and 3500, was expected to be produced from CR-39 by alkaline hydrolysis. We used IAA as a matrix to assist the ionization of organic analyte in MALDI-MS analysis and found that peaks from IAA covered mass spectrum in the lower m/z region making difficult to identify CR-39 fragment peaks which were also be seen in the same region. The mass spectrometry analysis using GC-MS and MALDI-MS will be powerful tools to investigate the radiation-induced polymeric fragments and helping to understand the track formation mechanism in CR-39 by heavy ions.

A Two-Dimensional Lamellar Membrane: MXene Nanosheet Stacks.

PubMed

Ding, Li; Wei, Yanying; Wang, Yanjie; Chen, Hongbin; Caro, Jürgen; Wang, Haihui

2017-02-06

Two-dimensional (2D) materials are promising candidates for advanced water purification membranes. A new kind of lamellar membrane is based on a stack of 2D MXene nanosheets. Starting from compact Ti 3 AlC 2 , delaminated nanosheets of the composition Ti 3 C 2 T x with the functional groups T (O, OH, and/or F) can be produced by etching and ultrasonication and stapled on a porous support by vacuum filtration. The MXene membrane supported on anodic aluminum oxide (AAO) substrate shows excellent water permeance (more than 1000 L m -2  h -1  bar -1 ) and favorable rejection rate (over 90 %) for molecules with sizes larger than 2.5 nm. The water permeance through the MXene membrane is much higher than that of the most membranes with similar rejections. Long-time operation also reveals the outstanding stability of the MXene membrane for water purification. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Creation of nanosized holes in graphene planes for improvement of rate capability of lithium-ion batteries

NASA Astrophysics Data System (ADS)

Bulusheva, L. G.; Stolyarova, S. G.; Chuvilin, A. L.; Shubin, Yu V.; Asanov, I. P.; Sorokin, A. M.; Mel'gunov, M. S.; Zhang, Su; Dong, Yue; Chen, Xiaohong; Song, Huaihe; Okotrub, A. V.

2018-04-01

Holes with an average size of 2-5 nm have been created in graphene layers by heating of graphite oxide (GO) in concentrated sulfuric acid followed by annealing in an argon flow. The hot mineral acid acts simultaneously as a defunctionalizing and etching agent, removing a part of oxygen-containing groups and lattice carbon atoms from the layers. Annealing of the holey reduced GO at 800 °C-1000 °C causes a decrease of the content of residual oxygen and the interlayer spacing thus producing thin compact stacks from holey graphene layers. Electrochemical tests of the obtained materials in half-cells showed that the removal of oxygen and creation of basal holes lowers the capacity loss in the first cycle and facilitates intercalation-deintercalation of lithium ions. This was attributed to minimization of electrolyte decomposition reactions, easier desolvation of lithium ions near the hole boundaries and appearance of multiple entrances for the naked ions into graphene stacks.

Characterization of high-quality kerfless epitaxial silicon for solar cells: Defect sources and impact on minority-carrier lifetime

NASA Astrophysics Data System (ADS)

Kivambe, Maulid M.; Powell, Douglas M.; Castellanos, Sergio; Jensen, Mallory Ann; Morishige, Ashley E.; Lai, Barry; Hao, Ruiying; Ravi, T. S.; Buonassisi, Tonio

2018-02-01

We investigate the types and origins of structural defects in thin (<100 μm) kerfless epitaxial single crystal silicon grown on top of reorganized porous silicon layers. Although the structural defect density is low (has average defect density < 104 cm-2), localized areas with a defect density > 105 cm-2 are observed. Cross-sectional and systematic plan-view defect etching and microscopy reveals that the majority of stacking faults and dislocations originate at the interface between the porous silicon layer and the epitaxial wafer. Localised dislocation clusters are observed in regions of collapsed/deformed porous silicon and at decorated stacking faults. In localized regions of high extended defect density, increased minority-carrier recombination activity is observed. Evidence for impurity segregation to the extended defects (internal gettering), which is known to exacerbate carrier recombination is demonstrated. The impact of the defects on material performance and substrate re-use is also discussed.

Effects on electron scattering and resist characteristics using assisting underlayers for e-beam direct write lithography

NASA Astrophysics Data System (ADS)

Thrun, Xaver; Choi, Kang-Hoon; Hanisch, Norbert; Hohle, Christoph; Steidel, Katja; Guerrero, Douglas; Figueiro, Thiago; Bartha, Johann W.

2013-03-01

Resist processing for future technology nodes becomes more and more complex. The resist film thickness is getting thinner and hardmask concepts (trilayer) are needed for reproducible etch transfer into the stack. Additional layers between resist and substrate are influencing the electron scattering in e-beam lithography and may also improve sensitivity and resolution. In this study, bare silicon wafers with different assisting underlayers were processed in a 300 mm CMOS manufacturing environment and were exposed on a 50 keV VISTEC SB3050DW variable-shaped electron beam direct writer at Fraunhofer CNT. The underlayers are organic-inorganic hybrid coatings with different metal additives. The negative-tone resist was evaluated in terms of contrast, sensitivity, resolution and LWR/LER as a function of the stack. The interactions between resist and different assisting underlayers on e-beam direct writing will be investigated. These layers could be used to optimize the trade-off among resolution, LWR and sensitivity in future applications.

Design and fabrication of a novel self-powered solid-state neutron detector

NASA Astrophysics Data System (ADS)

LiCausi, Nicholas

There is a strong interest in intercepting special nuclear materials (SNM) at national and international borders and ports for homeland security applications. Detection of SNM such as U and Pu is often accomplished by sensing their natural or induced neutron emission. Such detector systems typically use thermal neutron detectors inside a plastic moderator. In order to achieve high detection efficiency gas filled detectors are often used; these detectors require high voltage bias for operation, which complicates the system when tens or hundreds of detectors are deployed. A better type of detector would be an inexpensive solid-state detector that can be mass-produced like any other computer chip. Research surrounding solid-state detectors has been underway since the late 1990's. A simple solid-state detector employs a planar solar-cell type p-n junction and a thin conversion material that converts incident thermal neutrons into detectable alpha-particles and 7Li ions. Existing work has typically used 6LiF or 10B as this conversion layer. Although a simple planar detector can act as a highly portable, low cost detector, it is limited to relatively low detection efficiency (˜10%). To increase the efficiency, 3D perforated p-i-n silicon devices were proposed. To get high efficiency, these detectors need to be biased, resulting in increased leakage current and hence detector noise. In this research, a new type of detector structure was proposed, designed and fabricated. Among several detector structures evaluated, a honeycomb-like silicon p-n structure was selected, which is filled with natural boron as the neutron converter. A silicon p+-n diode formed on the thin silicon wall of the honeycomb structure detects the energetic alpha-particles emitted from the boron conversion layer. The silicon detection layer is fabricated to be fully depleted with an integral step during the boron filling process. This novel feature results in a simplified fabrication process. Three key advantages of the novel devices are theoretical neutron detection efficiency of ˜48%, a self-passivating structure that reduces leakage current and detector operation with no bias resulting in extremely low device noise. Processes required to fabricate the 3D type detector were explored and developed in this thesis. The detector capacitance and processing steps have been simulated with MEDICI and TSuprem-4, respectively. Lithography masks were then designed using Cadence. The fabrication process development was conducted in line with standard CMOS grade integrated circuit processing to allow for simple integration with existing fabrication facilities. A number of new processes were developed including the low pressure chemical vapor deposition of conformal boron films using diborane on very high aspect-ratio trenches and holes. Development also included methods for "wet" chemical etching and "dry" reactive ion etching of the deposited boron films. Fabricated detectors were characterized with the transmission line method, 4-point probe, I-V measurements and C-V measurements. Finally the detector response to thermal neutrons was studied. Characterization has shown significant reduction in reverse leakage current density to ˜8x10-8 A/cm2 (nearly 4 orders of magnitude over the previously published data). Results show that the fabrication process developed is capable of producing efficient (˜22.5%) solid-state thermal neutron detectors.

Repair of a Mirror Coating on a Large Optic for High Laser Damage Applications using Ion Milling and Over-Coating Methods.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Field, Ella Suzanne; Bellum, John Curtis; Kletecka, Damon E.

When an optical coating is damaged, deposited incorrectly, or is otherwise unsuitable, the conventional method to restore the optic often entails repolishing the optic surface, which can incur a large cost and long lead time. We propose three alternative options to repolishing, including (i) burying the unsuitable coating under another optical coating, (ii) using ion milling to etch the unsuitable coating completely from the optic surface, and then recoating the optic, and (iii) using ion milling to etch through a number of unsuitable layers, leaving the rest of the coating intact, and then recoating the layers that were etched. Repairsmore » were made on test optics with dielectric mirror coatings according to the above three options. The mirror coatings to be repaired were quarter wave stacks of HfO 2 and SiO 2 layers for high reflection at 1054 nm at 45° incidence in P-polarization. One of the coating layers was purposely deposited incorrectly as Hf metal instead of HfO 2 to evaluate the ability of each repair method to restore the coating’s high laser-induced damage threshold (LIDT) of 64.0 J/cm 2. Finally, the repaired coating with the highest resistance to laser-induced damage was achieved using repair method (ii) with an LIDT of 49.0 – 61.0 J/cm 2.« less

Repair of a mirror coating on a large optic for high laser damage applications using ion milling and over-coating methods

NASA Astrophysics Data System (ADS)

Field, Ella S.; Bellum, John C.; Kletecka, Damon E.

2017-01-01

When an optical coating is damaged, deposited incorrectly, or is otherwise unsuitable, the conventional method to restore the optic often entails repolishing the optic surface, which can incur a large cost and long lead time. We propose three alternative options to repolishing, including (i) burying the unsuitable coating under another optical coating, (ii) using ion milling to etch the unsuitable coating completely from the optic surface and then recoating the optic, and (iii) using ion milling to etch through a number of unsuitable layers, leaving the rest of the coating intact, and then recoating the layers that were etched. Repairs were made on test optics with dielectric mirror coatings according to the above three options. The mirror coatings to be repaired were quarter wave stacks of HfO2 and SiO2 layers for high reflection at 1054 nm at 45 deg incidence in P-polarization. One of the coating layers was purposely deposited incorrectly as Hf metal instead of HfO2 to evaluate the ability of each repair method to restore the coating's high laser-induced damage threshold (LIDT) of 64.0 J/cm2. The repaired coating with the highest resistance to laser-induced damage was achieved using repair method (ii) with an LIDT of 49.0 to 61.0 J/cm2.

Repair of a mirror coating on a large optic for high laser damage applications using ion milling and over-coating methods

DOE PAGES

Field, Ella S.; Bellum, John C.; Kletecka, Damon E.

2016-07-08

Here, when an optical coating is damaged, deposited incorrectly, or is otherwise unsuitable, the conventional method to restore the optic often entails repolishing the optic surface, which can incur a large cost and long lead time. We propose three alternative options to repolishing, including (i) burying the unsuitable coating under another optical coating, (ii) using ion milling to etch the unsuitable coating completely from the optic surface and then recoating the optic, and (iii) using ion milling to etch through a number of unsuitable layers, leaving the rest of the coating intact, and then recoating the layers that were etched.more » Repairs were made on test optics with dielectric mirror coatings according to the above three options. The mirror coatings to be repaired were quarter wave stacks of HfO 2 and SiO 2 layers for high reflection at 1054 nm at 45 deg incidence in P-polarization. One of the coating layers was purposely deposited incorrectly as Hf metal instead of HfO2 to evaluate the ability of each repair method to restore the coating’s high laser-induced damage threshold (LIDT) of 64.0 J/cm 2. The repaired coating with the highest resistance to laser-induced damage was achieved using repair method (ii) with an LIDT of 49.0 to 61.0 J/cm 2.« less

Repair of a Mirror Coating on a Large Optic for High Laser Damage Applications using Ion Milling and Over-Coating Methods.

DOE PAGES

Field, Ella Suzanne; Bellum, John Curtis; Kletecka, Damon E.

2016-06-01

When an optical coating is damaged, deposited incorrectly, or is otherwise unsuitable, the conventional method to restore the optic often entails repolishing the optic surface, which can incur a large cost and long lead time. We propose three alternative options to repolishing, including (i) burying the unsuitable coating under another optical coating, (ii) using ion milling to etch the unsuitable coating completely from the optic surface, and then recoating the optic, and (iii) using ion milling to etch through a number of unsuitable layers, leaving the rest of the coating intact, and then recoating the layers that were etched. Repairsmore » were made on test optics with dielectric mirror coatings according to the above three options. The mirror coatings to be repaired were quarter wave stacks of HfO 2 and SiO 2 layers for high reflection at 1054 nm at 45° incidence in P-polarization. One of the coating layers was purposely deposited incorrectly as Hf metal instead of HfO 2 to evaluate the ability of each repair method to restore the coating’s high laser-induced damage threshold (LIDT) of 64.0 J/cm 2. Finally, the repaired coating with the highest resistance to laser-induced damage was achieved using repair method (ii) with an LIDT of 49.0 – 61.0 J/cm 2.« less

Repair of a mirror coating on a large optic for high laser damage applications using ion milling and over-coating methods

DOE Office of Scientific and Technical Information (OSTI.GOV)

Field, Ella S.; Bellum, John C.; Kletecka, Damon E.

Here, when an optical coating is damaged, deposited incorrectly, or is otherwise unsuitable, the conventional method to restore the optic often entails repolishing the optic surface, which can incur a large cost and long lead time. We propose three alternative options to repolishing, including (i) burying the unsuitable coating under another optical coating, (ii) using ion milling to etch the unsuitable coating completely from the optic surface and then recoating the optic, and (iii) using ion milling to etch through a number of unsuitable layers, leaving the rest of the coating intact, and then recoating the layers that were etched.more » Repairs were made on test optics with dielectric mirror coatings according to the above three options. The mirror coatings to be repaired were quarter wave stacks of HfO 2 and SiO 2 layers for high reflection at 1054 nm at 45 deg incidence in P-polarization. One of the coating layers was purposely deposited incorrectly as Hf metal instead of HfO2 to evaluate the ability of each repair method to restore the coating’s high laser-induced damage threshold (LIDT) of 64.0 J/cm 2. The repaired coating with the highest resistance to laser-induced damage was achieved using repair method (ii) with an LIDT of 49.0 to 61.0 J/cm 2.« less

Pixelated coatings and advanced IR coatings

NASA Astrophysics Data System (ADS)

Pradal, Fabien; Portier, Benjamin; Oussalah, Meihdi; Leplan, Hervé

2017-09-01

Reosc developed pixelated infrared coatings on detector. Reosc manufactured thick pixelated multilayer stacks on IR-focal plane arrays for bi-spectral imaging systems, demonstrating high filter performance, low crosstalk, and no deterioration of the device sensitivities. More recently, a 5-pixel filter matrix was designed and fabricated. Recent developments in pixelated coatings, shows that high performance infrared filters can be coated directly on detector for multispectral imaging. Next generation space instrument can benefit from this technology to reduce their weight and consumptions.

Large volume flow-through scintillating detector

DOEpatents

Gritzo, Russ E.; Fowler, Malcolm M.

1995-01-01

A large volume flow through radiation detector for use in large air flow situations such as incinerator stacks or building air systems comprises a plurality of flat plates made of a scintillating material arranged parallel to the air flow. Each scintillating plate has a light guide attached which transfers light generated inside the scintillating plate to an associated photomultiplier tube. The output of the photomultiplier tubes are connected to electronics which can record any radiation and provide an alarm if appropriate for the application.

ICASE Semiannual Report

DTIC Science & Technology

1991-05-01

Greenberg and B. Lubachevsky (AT& T, Bell Laboratories). We have developed algorithms suitable for simulating a general class of stack replacement policy al...systems of conservation laws. Finally, we began to study various edge detectors based on the (truncated) Hilbert trans- form, in the context of spectral

Wafer-fused semiconductor radiation detector

DOEpatents

Lee, Edwin Y.; James, Ralph B.

2002-01-01

Wafer-fused semiconductor radiation detector useful for gamma-ray and x-ray spectrometers and imaging systems. The detector is fabricated using wafer fusion to insert an electrically conductive grid, typically comprising a metal, between two solid semiconductor pieces, one having a cathode (negative electrode) and the other having an anode (positive electrode). The wafer fused semiconductor radiation detector functions like the commonly used Frisch grid radiation detector, in which an electrically conductive grid is inserted in high vacuum between the cathode and the anode. The wafer-fused semiconductor radiation detector can be fabricated using the same or two different semiconductor materials of different sizes and of the same or different thicknesses; and it may utilize a wide range of metals, or other electrically conducting materials, to form the grid, to optimize the detector performance, without being constrained by structural dissimilarity of the individual parts. The wafer-fused detector is basically formed, for example, by etching spaced grooves across one end of one of two pieces of semiconductor materials, partially filling the grooves with a selected electrical conductor which forms a grid electrode, and then fusing the grooved end of the one semiconductor piece to an end of the other semiconductor piece with a cathode and an anode being formed on opposite ends of the semiconductor pieces.

Fabrication and Gas-Sensing Properties of Ni-Silicide/Si Nanowires.

PubMed

Hsu, Hsun-Feng; Chen, Chun-An; Liu, Shang-Wu; Tang, Chun-Kai

2017-12-01

Ni-silicide/Si nanowires were fabricated by atomic force microscope nano-oxidation on silicon-on-insulator substrates, selective wet etching, and reactive deposition epitaxy. Ni-silicide nanocrystal-modified Si nanowire and Ni-silicide/Si heterostructure multi-stacked nanowire were formed by low- and high-coverage depositions of Ni, respectively. The Ni-silicide/Si Schottky junction and Ni-silicide region were attributed high- and low-resistance parts of nanowire, respectively, causing the resistance of the Ni-silicide nanocrystal-modified Si nanowire and the Ni-silicide/Si heterostructure multi-stacked nanowire to be a little higher and much lower than that of Si nanowire. An O 2 sensing device was formed from a nanowire that was mounted on Pt electrodes. When the nanowires exposed to O 2 , the increase in current in the Ni-silicide/Si heterostructure multi-stacked nanowire was much larger than that in the other nanowires. The Ni-silicide nanocrystal-modified Si nanowire device had the highest sensitivity. The phenomenon can be explained by the formation of a Schottky junction at the Ni-silicide/Si interface in these two types of Ni-Silicide/Si nanowire and the formation of a hole channel at the silicon nanowire/native oxide interface after exposing the nanowires to O 2 .

A combined analysis technique for the search for fast magnetic monopoles with the MACRO detector

NASA Astrophysics Data System (ADS)

MACRO Collaboration; Ambrosio, M.; Antolini, R.; Auriemma, G.; Bakari, D.; Baldini, A.; Barbarino, G. C.; Barish, B. C.; Battistoni, G.; Becherini, Y.; Bellotti, R.; Bemporad, C.; Bernardini, P.; Bilokon, H.; Bloise, C.; Bower, C.; Brigida, M.; Bussino, S.; Cafagna, F.; Calicchio, M.; Campana, D.; Carboni, M.; Caruso, R.; Cecchini, S.; Cei, F.; Chiarella, V.; Choudhary, B. C.; Coutu, S.; De Cataldo, G.; Dekhissi, H.; De Marzo, C.; De Mitri, I.; Derkaoui, J.; De Vincenzi, M.; DiCredico, A.; Erriquez, O.; Favuzzi, C.; Forti, C.; Fusco, P.; Giacomelli, G.; Giannini, G.; Giglietto, N.; Giorgini, M.; Grassi, M.; Grillo, A.; Guarino, F.; Gustavino, C.; Habig, A.; Heinz, R.; Iarocci, E.; Katsavounidis, E.; Katsavounidis, I.; Kearns, E.; Kim, H.; Kyriazopoulou, S.; Lamanna, E.; Lane, C.; Levin, D. S.; Lipari, P.; Longley, N. P.; Longo, M. J.; Loparco, F.; Maaroufi, F.; Mancarella, G.; Mandrioli, G.; Manzoor, S.; Margiotta, A.; Marini, A.; Martello, D.; Marzari-Chiesa, A.; Mazziotta, M. N.; Michael, D. G.; Monacelli, P.; Montaruli, T.; Monteno, M.; Mufson, S.; Musser, J.; Nicolò, D.; Nolty, R.; Orth, C.; Osteria, G.; Palamara, O.; Patera, V.; Patrizii, L.; Pazzi, R.; Peck, C. W.; Perrone, L.; Petrera, S.; Popa, V.; Reynoldson, J.; Ronga, F.; Rrhioua, A.; Satriano, C.; Scapparone, E.; Scholberg, K.; Sciubba, A.; Serra, P.; Sioli, M.; Sirri, G.; Sitta, M.; Spinelli, P.; Spinetti, M.; Spurio, M.; Steinberg, R.; Stone, J. L.; Sulak, L. R.; Surdo, A.; Tarlè, G.; Togo, V.; Vakili, M.; Walter, C. W.; Webb, R.

2002-08-01

We describe a search method for fast moving (β=v/c>5×10-3) magnetic monopoles using simultaneously the scintillator, streamer tube and track-etch subdetectors of the MACRO apparatus. The first two subdetectors are used primarily for the identification of candidates while the track-etch one is used as the final tool for their rejection or confirmation. Using this technique, a first sample of more than two years of data has been analyzed without any evidence of a magnetic monopole. We set a 90% CL upper limit to the local monopole flux of 1.5×10-15 cm-2s-1sr-1 in the velocity range 5×10-3<=β<=0.99 and for nucleon decay catalysis cross-section smaller than /~1 mb

Process for Fabrication of Superconducting Vias for Electrical Connection to Groundplane in Cryogenic Detectors

NASA Technical Reports Server (NTRS)

Denis, Kevin L. (Inventor)

2018-01-01

Disclosed are systems, methods, and non-transitory computer-readable storage media for fabrication of silicon on insulator (SOI) wafers with a superconductive via for electrical connection to a groundplane. Fabrication of the SOI wafer with a superconductive via can involve depositing a superconducting groundplane onto a substrate with the superconducting groundplane having an oxidizing layer and a non-oxidizing layer. A layer of monocrystalline silicon can be bonded to the superconducting groundplane and a photoresist layer can be applied to the layer of monocrystalline silicon and the SOI wafer can be etched with the oxygen rich etching plasma, resulting in a monocrystalline silicon top layer with a via that exposes the superconducting groundplane. Then, the fabrication can involve depositing a superconducting surface layer to cover the via.

Ultra-low loss fully-etched grating couplers for perfectly vertical coupling compatible with DUV lithography tools

NASA Astrophysics Data System (ADS)

Dabos, G.; Pleros, N.; Tsiokos, D.

2016-03-01

Hybrid integration of VCSELs onto silicon-on-insulator (SOI) substrates has emerged as an attractive approach for bridging the gap between cost-effective and energy-efficient directly modulated laser sources and silicon-based PICs by leveraging flip-chip (FC) bonding techniques and silicon grating couplers (GCs). In this context, silicon GCs, should comply with the process requirements imposed by the complimentary-metal-oxide-semiconductor manufacturing tools addressing in parallel the challenges originating from the perfectly vertical incidence. Firstly, fully etched GCs compatible with deep-ultraviolet lithography tools offering high coupling efficiencies are imperatively needed to maintain low fabrication cost. Secondly, GC's tolerance to VCSEL bonding misalignment errors is a prerequisite for practical deployment. Finally, a major challenge originating from the perfectly vertical coupling scheme is the minimization of the direct back-reflection to the VCSEL's outgoing facet which may destabilize its operation. Motivated from the above challenges, we used numerical simulation tools to design an ultra-low loss, bidirectional VCSEL-to-SOI optical coupling scheme for either TE or TM polarization, based on low-cost fully etched GCs with a Si-layer of 340 nm without employing bottom reflectors or optimizing the buried-oxide layer. Comprehensive 2D Finite-Difference-Time- Domain simulations have been performed. The reported GC layout remains fully compatible with the back-end-of-line (BEOL) stack associated with the 3D integration technology exploiting all the inter-metal-dielectric (IMD) layers of the CMOS fab. Simulation results predicted for the first time in fully etched structures a coupling efficiency of as low as -0.87 dB at 1548 nm and -1.47 dB at 1560 nm with a minimum direct back-reflection of -27.4 dB and -14.2 dB for TE and TM polarization, respectively.

MEMS Cantilever Sensor for THz Photoacoustic Chemical Sensing and Spectroscopy

DTIC Science & Technology

2013-12-26

meaning the detector didn’t have to be cryogenically cooled. Piezoresistive cantilever style sensor designs have been fabricated for wind and...made a two cantilever pizeoresistive wind speed sensor that utilized a Wheatstone bridge configuration. The designed cantilevers, etched out of...Murakami et al. in Japan fabricated diaphragm and cantilever PZT microphone sensors for anomaly detection in machines such as turbines or engines

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rao, Nageswara S.; Ramirez Aviles, Camila A.

We consider the problem of inferring the operational status of a reactor facility using measurements from a radiation sensor network deployed around the facility’s ventilation off-gas stack. The intensity of stack emissions decays with distance, and the sensor counts or measurements are inherently random with parameters determined by the intensity at the sensor’s location. We utilize the measurements to estimate the intensity at the stack, and use it in a one-sided Sequential Probability Ratio Test (SPRT) to infer on/off status of the reactor. We demonstrate the superior performance of this method over conventional majority fusers and individual sensors using (i)more » test measurements from a network of 21 NaI detectors, and (ii) effluence measurements collected at the stack of a reactor facility. We also analytically establish the superior detection performance of the network over individual sensors with fixed and adaptive thresholds by utilizing the Poisson distribution of the counts. We quantify the performance improvements of the network detection over individual sensors using the packing number of the intensity space.« less

Interpreting short and medium exposure etched-track radon measurements to determine whether an action level could be exceeded.

PubMed

Denman, A R; Crockett, R G M; Groves-Kirkby, C J; Phillips, P S

2016-10-01

Radon gas is naturally occurring, and can concentrate in the built environment. It is radioactive and high concentration levels within buildings, including homes, have been shown to increase the risk of lung cancer in the occupants. As a result, several methods have been developed to measure radon. The long-term average radon level determines the risk to occupants, but there is always pressure to complete measurements more quickly, particularly when buying and selling the home. For many years, the three-month exposure using etched-track detectors has been the de facto standard, but a decade ago, Phillips et al. (2003), in a DEFRA funded project, evaluated the use of 1-week and 1-month measurements. They found that the measurement methods were accurate, but the challenge lay in the wide variation in radon levels - with diurnal, seasonal, and other patterns due to climatic factors and room use. In the report on this work, and in subsequent papers, the group proposed methodologies for 1-week, 1-month and 3-month measurements and their interpretation. Other work, however, has suggested that 2-week exposures were preferable to 1-week ones. In practice, the radon remediation industry uses a range of exposure times, and further guidance is required to help interpret these results. This paper reviews the data from this study and a subsequent 4-year study of 4 houses, re-analysing the results and extending them to other exposures, particularly for 2-week and 2-month exposures, and provides comprehensive guidance for the use of etched-track detectors, the value and use of Seasonal Correction Factors (SCFs), the uncertainties in short and medium term exposures and the interpretation of results. Copyright © 2016 Elsevier Ltd. All rights reserved.

Superlattice Barrier Infrared Detector Development at the Jet Propulsion Laboratory

NASA Technical Reports Server (NTRS)

Ting, David Z.; Soibel, Alexander; Rafol, Sir B.; Nguyen, Jean; Hoglund, Linda; Khoshakhlagh, Arezou; Keo, Sam A.; Liu, John K.; Mumolo, Jason M.

2011-01-01

We report recent efforts in achieving state-of-the-art performance in type-II superlattice based infrared photodetectors using the barrier infrared detector architecture. We used photoluminescence measurements for evaluating detector material and studied the influence of the material quality on the intensity of the photoluminescence. We performed direct noise measurements of the superlattice detectors and demonstrated that while intrinsic 1/f noise is absent in superlattice heterodiode, side-wall leakage current can become a source of strong frequency-dependent noise. We developed an effective dry etching process for these complex antimonide-based superlattices that enabled us to fabricate single pixel devices as well as large format focal plane arrays. We describe the demonstration of a 1024x1024 pixel long-wavelength infrared focal plane array based the complementary barrier infrared detector (CBIRD) design. An 11.5 micron cutoff focal plane without anti-reflection coating has yielded noise equivalent differential temperature of 53 mK at operating temperature of 80 K, with 300 K background and cold-stop. Imaging results from a recent 10 ?m cutoff focal plane array are also presented.

On the Age of Cosmic Rays as Derived from the Abundance of Be-10. Ph.D. Thesis - Maryland Univ.

NASA Technical Reports Server (NTRS)

Hagen, F. A.

1976-01-01

The isotopic composition of cosmic ray Be, B, C, and N was studied using a new range versus total light technique. Special emphasis was placed on the Be isotopes and in particular, on the radioactive isotope Be-10 due to its mean lifetime against decay. The experiment consisted of a thin trigger scintillator, an acrylic plastic Cerenkov detector and a spark chamber, followed by a totally active stack of 14 scintillation detectors. This stack of scintillators made possible the measurement of range, and also permitted the removal of interacting events by continuously monitoring their identities along their trajectories. The experiment was carried by balloon to atmospheric depths ranging from 3.5 to 5.0 g sq cm residual atmosphere for a total exposure time of 23 hr. Results indicate the survival of ( 55 + or -21) % of the Be-10 in the arriving cosmic rays; the data were interpreted using the leaky box model of cosmic ray propagation.

First-principles study of a MXene terahertz detector.

PubMed

Jhon, Y I; Seo, M; Jhon, Y M

2017-12-21

2D transition metal carbides, nitrides, and carbonitrides called MXenes have attracted increasing attention due to their outstanding properties in many fields. By performing systematic density functional theory calculations, here we show that MXenes can serve as excellent terahertz detecting materials. Giant optical absorption and extinction coefficients are observed in the terahertz range in the most popular MXene, namely, Ti 3 C 2 , which is regardless of the stacking degree. Various other optical properties have been investigated as well in the terahertz range for in-depth understanding of its optical response. We find that the thermoelectric figure of merit (ZT) of stacked Ti 3 C 2 flakes is comparable to that of carbon nanotube films. Based on excellent terahertz absorption and decent thermoelectric efficiency in MXenes, we finally suggest the promise of MXenes in terahertz detection applications, which includes terahertz bolometers and photothermoelectric detectors. Possible ZT improvements are discussed in large-scale MXene flake films and/or MXene-polymer composite films.

A multilayered approach to superconducting tunnel junction x ray detectors

NASA Technical Reports Server (NTRS)

Rippert, E. D.; Song, S. N.; Ketterson, J. B.; Maglic, S. R.; Lomatch, S.; Thomas, C.; Cheida, M. A.; Ulmer, M. P.

1992-01-01

'First generation' superconducting tunnel junction X-ray detectors (characterized by a single tunnel junction in direct contact with its substrate, with totally external amplification) remain more than an order of magnitude away from their theoretical energy resolutions which are in the order of eV's. The difficulties that first generation devices are encountering are being attacked by a 'second generation' of superconducting X-ray detector designs including quasiparticle trapping configurations and Josephson junction arrays. A second generation design concept, the multilayered superconducting tunnel junction X-ray detector, consisting of tens to hundreds of tunnel junctions stacked on top of one another (a superlattice), is presented. Some of the possibilities of this engineered materials approach include the tuning of phonon transmission characteristics of the material, suppression of parasitic quasiparticle trapping and intrinsic amplification.

SEMICONDUCTOR TECHNOLOGY: Influence of hydrogenation on the dark current mechanism of HgCdTe photovoltaic detectors

NASA Astrophysics Data System (ADS)

Hui, Qiao; Weida, Hu; Zhenhua, Ye; Xiangyang, Li; Haimei, Gong

2010-03-01

The influence of hydrogenation on the dark current mechanism of HgCdTe photovoltaic detectors is studied. The hydrogenation is achieved by exposing samples to a H2/Ar plasma atmosphere that was produced during a reactive ion etching process. A set of variable-area photomask was specially designed to evaluate the hydrogenation effect. It was found that the current-voltage characteristics were gradually improved when detectors were hydrogenated by different areas. The fitting results of experimental results at reverse bias conditions sustained that the improvement of current-voltage curves was due to the suppression of trap assisted tunneling current and the enhancement of minority lifetime in the depletion region. It was also found that the dominative forward current was gradually converted from a generation-recombination current to a diffusion current with the enlargement of the hydrogenation area, which was infered from the ideality factors by abstraction of forward resistance-voltage curves of different detectors.

LDH nanocages synthesized with MOF templates and their high performance as supercapacitors

NASA Astrophysics Data System (ADS)

Jiang, Zhen; Li, Zhengping; Qin, Zhenhua; Sun, Haiyan; Jiao, Xiuling; Chen, Dairong

2013-11-01

Layered double hydroxides (LDHs) are currently attracting intense research interest for their various applications. Three LDH hollow nano-polyhedra are synthesized with zeolitic imidazolate framework-67 (ZIF-67) nanocrystals as the templates. The nanocages well inherit the rhombic dodecahedral shape of the ZIF-67 templates, and the shell is composed of nanosheets assembled with an edge-to-face stacking. This is the first synthesis of the LDH non-spherical structures. And the mechanism of utilizing metal-organic framework (MOF) nanocrystals as templates is explored. Control of the simultaneous reactions, the precipitation of the shells and the template etching, is extremely crucial to the preparation of the perfect nanocages. And the Ni-Co LDH nanocages exhibit superior pseudocapacitance property due to their novel hierarchical and submicroscopic structures.Layered double hydroxides (LDHs) are currently attracting intense research interest for their various applications. Three LDH hollow nano-polyhedra are synthesized with zeolitic imidazolate framework-67 (ZIF-67) nanocrystals as the templates. The nanocages well inherit the rhombic dodecahedral shape of the ZIF-67 templates, and the shell is composed of nanosheets assembled with an edge-to-face stacking. This is the first synthesis of the LDH non-spherical structures. And the mechanism of utilizing metal-organic framework (MOF) nanocrystals as templates is explored. Control of the simultaneous reactions, the precipitation of the shells and the template etching, is extremely crucial to the preparation of the perfect nanocages. And the Ni-Co LDH nanocages exhibit superior pseudocapacitance property due to their novel hierarchical and submicroscopic structures. Electronic supplementary information (ESI) available: Experimental details, XRD, TEM, SEM, and XPS images. See DOI: 10.1039/c3nr03829g

Reducing the substrate dependent scanner leveling effect in low-k1 contact printing

NASA Astrophysics Data System (ADS)

Chang, C. S.; Tseng, C. F.; Huang, C. H.; Yang, Elvis; Yang, T. H.; Chen, K. C.

2015-03-01

As the scaling down of design rule for high-density memory device, the small depth of focus (DoF) budget may be deteriorated by focus leveling errors, which arises in unpredicted reflectivity from multilayer structures on the topographic wafer. The leveling sensors of ASML scanner use near infrared (NIR) range wavelength which can penetrate through most of films using in semiconductor fabrication such as photo-resist, bottom anti reflective coating (BARC) and dielectric materials. Consequently, the reflected light from underlying substructures would disturb leveling sensors from accurate leveling. The different pattern densities and layout characteristics between array and periphery of a memory chip are expected to result in different leveling signals. Furthermore, the process dependent variations between wafer central and edge areas are also considered to yield different leveling performances during wafer exposure. In this study, lower blind contact immunity was observed for peripheral contacts comparing to the array contacts especially around wafer edge region. In order to overcome this problem, a series of investigations have been carried out. The wafer edge leveling optimization through circuit dependent focus edge clearance (CDFEC) option doesn't get improvement. Air gauge improved process leveling (AGILE) function of ASML immersion scanner doesn't show improved result either. The ILD uniformity improvement and step height treatments around wafer edge such as edge exclusion of film deposition and bevel etching are also ineffective to mitigate the blind contact problem of peripheral patterns. Altering the etch hard-mask stack is finally found to be an effective approach to alleviate the issue. For instance, through either containing high temperature deposition advanced patterning film (APF) in the hard-mask or inserting higher opaque film such as amorphous Si in between the hard-mask stack.

Preliminary results of radiation measurements on EURECA

NASA Technical Reports Server (NTRS)

Benton, E. V.; Frank, A. L.

1995-01-01

The eleven-month duration of the EURECA mission allows long-term radiation effects to be studied similarly to those of the Long Duration Exposure Facility (LDEF). Basic data can be generated for projections to crew doses and electronic and computer reliability on spacecraft missions. A radiation experiment has been designed for EURECA which uses passive integrating detectors to measure average radiation levels. The components include a Trackoscope, which employs fourteen plastic nuclear track detector (PNTD) stacks to measure the angular dependence of high LET (greater than or equal to 6 keV/micro m) radiation. Also included are TLD's for total absorbed doses, thermal/resonance neutron detectors (TRND's) for low energy neutron fluences and a thick PNTD stack for depth dependence measurements. LET spectra are derived from the PNTD measurements. Preliminary TLD results from seven levels within the detector array show that integrated does inside the flight canister varied from 18.8 +/- 0.6 cGy to 38.9 +/- 1.2 cGy. The TLD's oriented toward the least shielded direction averaged 53% higher in dose than those oriented away from the least shielded direction (minimum shielding toward the least shielded direction varied from 1.13 to 7.9 g/cm(exp 2), Al equivalent). The maximum dose rate on EURECA (1.16 mGy/day) was 37% of the maximum measured on LDEF and dose rates at all depths were less than measured on LDEF. The shielding external to the flight canister covered a greater solid angle about the canister than the LDEF experiments.

Far infrared through millimeter backshort-under-grid arrays

NASA Astrophysics Data System (ADS)

Allen, Christine A.; Abrahams, John; Benford, Dominic J.; Chervenak, James A.; Chuss, David T.; Staguhn, Johannes G.; Miller, Timothy M.; Moseley, S. Harvey; Wollack, Edward J.

2006-06-01

We are developing a large-format, versatile, bolometer array for a wide range of infrared through millimeter astronomical applications. The array design consists of three key components - superconducting transition edge sensor bolometer arrays, quarter-wave reflective backshort grids, and Superconducting Quantum Interference Device (SQUID) multiplexer readouts. The detector array is a filled, square grid of bolometers with superconducting sensors. The backshort arrays are fabricated separately and are positioned in the etch cavities behind the detector grid. The grids have unique three-dimensional interlocking features micromachined into the walls for positioning and mechanical stability. The ultimate goal of the program is to produce large-format arrays with background-limited sensitivity, suitable for a wide range of wavelengths and applications. Large-format (kilopixel) arrays will be directly indium bump bonded to a SQUID multiplexer circuit. We have produced and tested 8×8 arrays of 1 mm detectors to demonstrate proof of concept. 8×16 arrays of 2 mm detectors are being produced for a new Goddard Space Flight Center instrument. We have also produced models of a kilopixel detector grid and dummy multiplexer chip for bump bonding development. We present detector design overview, several unique fabrication highlights, and assembly technologies.

Nuclear Track Detector Characterization via Alpha-Spectrometry for Radioprotection Use

DOE Office of Scientific and Technical Information (OSTI.GOV)

Morelli, D.; Imme, G.; Catalano, R.

2011-12-13

Solid Nuclear Track Detectors (SNTDs), CR-39 type, are usually adopted to monitor radon gas concentrations. In order to characterize the detectors according to track geometrical parameters, detectors were irradiated inside a vacuum chamber by alpha particles at twelve energy values, obtained by different Mylar foils in front of a {sup 241}Am source. The alpha energy values were verified using a Si detector. After the exposure to the alpha particles, the detectors were chemically etched to enlarge the tracks, which were then analyzed by means of a semiautomatic system composed of an optical microscope equipped with a CCD camera connected tomore » a personal computer to store images. A suitable routine analyzed the track parameters: major and minor axis length and mean grey level, allowing us to differentiate tracks according to the incident alpha energy and then to individuate the discrimination factors for radon alpha tracks. The combined use of geometrical and optical parameters allows one to overcome the ambiguity in the alpha energy determination due to the non-monotonicity of each parameter versus energy. After track parameter determination, a calibration procedure was performed by means of a radon chamber. The calibration was verified through an inter-comparing survey.« less

Matching Condition of Direct THz-Signal Detection from On-Chip Resonating Antennas with CMOS Transistors in Non-resonant Plasma Wave Mode

NASA Astrophysics Data System (ADS)

Chai, S.; Lim, S.; Kim, C.-Y.; Hong, S.

2018-06-01

This paper presents matching condition for detector at THz frequencies, which directly read signals from an integrated antenna. We use direct THz-signal detections with CMOS transistors in non-resonant plasma wave mode, which are embedded in on-chip resonating antennas. The detector detects THz envelope signals directly from the side edges of the on-chip patch antennas. The signal detection mechanism is studied in the view of the impedance conditions of the antenna and the detector. The detectors are implemented with stacked transistors structures to achieve high responsivity. The measured responsivities of the detectors with antenna impedances that were simulated to be 599.7, 912.3, 1565, and 3190.6 Ω agree well with the calculated values. Moreover, the responsivity dependence on the detector impedance is shown with two different input impedances of the detectors. Since CMOS circuit models from foundry are not accurate at frequencies higher than f t , the matching guideline between the antenna and the detector is very useful in designing high responsivity detectors. This study found that a detector has to have a large input impedance conjugately matched to the antenna's impedance to have high responsivity.

Matching Condition of Direct THz-Signal Detection from On-Chip Resonating Antennas with CMOS Transistors in Non-resonant Plasma Wave Mode

NASA Astrophysics Data System (ADS)

Chai, S.; Lim, S.; Kim, C.-Y.; Hong, S.

2018-04-01

This paper presents matching condition for detector at THz frequencies, which directly read signals from an integrated antenna. We use direct THz-signal detections with CMOS transistors in non-resonant plasma wave mode, which are embedded in on-chip resonating antennas. The detector detects THz envelope signals directly from the side edges of the on-chip patch antennas. The signal detection mechanism is studied in the view of the impedance conditions of the antenna and the detector. The detectors are implemented with stacked transistors structures to achieve high responsivity. The measured responsivities of the detectors with antenna impedances that were simulated to be 599.7, 912.3, 1565, and 3190.6 Ω agree well with the calculated values. Moreover, the responsivity dependence on the detector impedance is shown with two different input impedances of the detectors. Since CMOS circuit models from foundry are not accurate at frequencies higher than f t , the matching guideline between the antenna and the detector is very useful in designing high responsivity detectors. This study found that a detector has to have a large input impedance conjugately matched to the antenna's impedance to have high responsivity.

Self-assembled nanoparticle arrays as nanomasks for pattern transfer

NASA Astrophysics Data System (ADS)

Sachan, M.; Bonnoit, C.; Hogg, C.; Evarts, E.; Bain, J. A.; Majetich, S. A.; Park, J.-H.; Zhu, J.-G.

2008-07-01

Argon ion milling was used to transfer the pattern of sparse 12 nm iron oxide nanoparticles into underlying thin films of Pt and magnetic tunnel junction stacks and quantify their etching rates and morphological evolution. Under typical milling conditions, Pt milled at 10 nm min-1, while the isolated particles of iron oxide used for the mask milled at 5 nm min-1. Dilute dispersions of nanoparticles were used to produce the sparse nanomasks, and high resolution scanning electron microscopy (SEM) and atomic force microscopy were used to monitor the evolution of etched structures as a function of milling time. SEM measurements indicate an apparent 20% increase in feature diameter before the features began to diminish under additional milling, suggesting redeposition as a limiting feature in the milling of dense arrays. Simulations of the milling process in nanoparticle arrays that include redeposition are consistent with this observation. These simulations predict that an edge-to-edge spacing of 3 nm in a dense array is feasible, but that redeposition reduces the final structure aspect ratio from that of the masking array by as much as a factor of two.

Photonic Crystal Sensors Based on Porous Silicon

PubMed Central

Pacholski, Claudia

2013-01-01

Porous silicon has been established as an excellent sensing platform for the optical detection of hazardous chemicals and biomolecular interactions such as DNA hybridization, antigen/antibody binding, and enzymatic reactions. Its porous nature provides a high surface area within a small volume, which can be easily controlled by changing the pore sizes. As the porosity and consequently the refractive index of an etched porous silicon layer depends on the electrochemial etching conditions photonic crystals composed of multilayered porous silicon films with well-resolved and narrow optical reflectivity features can easily be obtained. The prominent optical response of the photonic crystal decreases the detection limit and therefore increases the sensitivity of porous silicon sensors in comparison to sensors utilizing Fabry-Pérot based optical transduction. Development of porous silicon photonic crystal sensors which allow for the detection of analytes by the naked eye using a simple color change or the fabrication of stacked porous silicon photonic crystals showing two distinct optical features which can be utilized for the discrimination of analytes emphasize its high application potential. PMID:23571671

Effect of elastic strain redistribution on electronic band structures of compressively strained GaInAsP/InP membrane quantum wires

NASA Astrophysics Data System (ADS)

Ferdous, F.; Haque, A.

2007-05-01

The effect of redistribution of elastic strain relaxation on the energy band structures of GaInAsP/InP compressively strained membrane quantum wires fabricated by electron-beam lithography, reactive-ion etching and two-step epitaxial growth is theoretically studied using an 8-band k ṡp method. Anisotropic strain analysis by the finite element method shows that due to etching away the top and the bottom InP clad layers in membrane structures, redistribution of strain occurs. It is found that strain redistribution increases the effective bandgap of membrane quantum wire structures causing a blueshift of the emission frequency. Comparison with effective bandgap calculations neglecting confinement and band mixing demonstrates that neglect of these effects leads to an overestimation of the change in the bandgap. We have also investigated the effect of variation of wire width, barrier strain compensation, number of stacked quantum wire layers, and thickness of the top and the bottom residual InP layers in membrane structures on the change in the effective bandgap of membrane structures.

Synthesis of freestanding single-crystal perovskite films and heterostructures by etching of sacrificial water-soluble layers

DOE PAGES

Lu, Di; Baek, David J.; Hong, Seung Sae; ...

2016-09-12

Here, the ability to create and manipulate materials in two-dimensional (2D) form has repeatedly had transformative impact on science and technology. In parallel with the exfoliation and stacking of intrinsically layered crystals 1, 2, 3, 4, 5, atomic-scale thin film growth of complex materials has enabled the creation of artificial 2D heterostructures with novel functionality 6, 7, 8, 9 and emergent phenomena, as seen in perovskite heterostructures 10, 11, 12. However, separation of these layers from the growth substrate has proved challenging, limiting the manipulation capabilities of these heterostructures with respect to exfoliated materials. Here we present a general methodmore » to create freestanding perovskite membranes. The key is the epitaxial growth of water-soluble Sr 3Al 2O 6 on perovskite substrates, followed by in situ growth of films and heterostructures. Millimetre-size single-crystalline membranes are produced by etching the Sr 3Al 2O 6 layer in water, providing the opportunity to transfer them to arbitrary substrates and integrate them with heterostructures of semiconductors and layered compounds 13, 14.« less

Detector modules and spectrometers for the TIME-Pilot [CII] intensity mapping experiment

NASA Astrophysics Data System (ADS)

Hunacek, Jonathon; Bock, James; Bradford, C. Matt; Bumble, Bruce; Chang, Tzu-Ching; Cheng, Yun-Ting; Cooray, Asantha; Crites, Abigail; Hailey-Dunsheath, Steven; Gong, Yan; Li, Chao-Te; O'Brient, Roger; Shirokoff, Erik; Shiu, Corwin; Sun, Jason; Staniszewski, Zachary; Uzgil, Bade; Zemcov, Michael

2016-07-01

This proceeding presents the current TIME-Pilot instrument design and status with a focus on the close-packed modular detector arrays and spectrometers. Results of laboratory tests with prototype detectors and spectrometers are discussed. TIME-Pilot is a new mm-wavelength grating spectrometer array under development that will study the Epoch of Reionization (the period of time when the first stars and galaxies ionized the intergalactic medium) by mapping the fluctuations of the redshifted 157:7 μm emission line of singly ionized carbon ([CII]) from redshift z 5:2 to 8:5. As a tracer of star formation, the [CII] power spectrum can provide information on the sources driving reionization and complements 21 cm data (which traces neutral hydrogen in the intergalactic medium). Intensity mapping provides a measure of the mean [CII] intensity without the need to resolve and detect faint sources individually. We plan to target a 1 degree by 0.35 arcminute field on the sky and a spectral range of 199-305 GHz, producing a spatial-spectral slab which is 140 Mpc by 0.9 Mpc on-end and 1230 Mpc in the redshift direction. With careful removal of intermediate-redshift CO sources, we anticipate a detection of the halo-halo clustering term in the [CII] power spectrum consistent with current models for star formation history in 240 hours on the JCMT. TIME-Pilot will use two stacks of 16 parallel-plate waveguide spectrometers (one stack per polarization) with a resolving power R 100 and a spectral range of 183 to 326 GHz. The range is divided into 60 spectral channels, of which 16 at the band edges on each spectrometer serve as atmospheric monitors. The diffraction gratings are curved to produce a compact instrument, each focusing the diffracted light onto an output arc sampled by the 60 bolometers. The bolometers are built in buttable dies of 8 (low freqeuency) or 12 (high frequency) spectral channels by 8 spatial channels and are mated to the spectrometer stacks. Each detector consists of a gold micro-mesh absorber and a titanium transition edge sensor (TES). The detectors (1920 total) are designed to operate from a 250 mK base temperature in an existing cryostat with a photon-noise-dominated NEP of 2 * 10-17 WHz-1-2. A set of flexible superconducting cables connect the detectors to a time-domain multiplexing SQUID readout system.

The analysis method of the DRAM cell pattern hotspot

NASA Astrophysics Data System (ADS)

Lee, Kyusun; Lee, Kweonjae; Chang, Jinman; Kim, Taeheon; Han, Daehan; Hong, Aeran; Kim, Yonghyeon; Kang, Jinyoung; Choi, Bumjin; Lee, Joosung; Lee, Jooyoung; Hong, Hyeongsun; Lee, Kyupil; Jin, Gyoyoung

2015-03-01

It is increasingly difficult to determine degree of completion of the patterning and the distribution at the DRAM Cell Patterns. When we research DRAM Device Cell Pattern, there are three big problems currently, it is as follows. First, due to etch loading, it is difficult to predict the potential defect. Second, due to under layer topology, it is impossible to demonstrate the influence of the hotspot. Finally, it is extremely difficult to predict final ACI pattern by the photo simulation, because current patterning process is double patterning technology which means photo pattern is completely different from final etch pattern. Therefore, if the hotspot occurs in wafer, it is very difficult to find it. CD-SEM is the most common pattern measurement tool in semiconductor fabrication site. CD-SEM is used to accurately measure small region of wafer pattern primarily. Therefore, there is no possibility of finding places where unpredictable defect occurs. Even though, "Current Defect detector" can measure a wide area, every chip has same pattern issue, the detector cannot detect critical hotspots. Because defect detecting algorithm of bright field machine is based on image processing, if same problems occur on compared and comparing chip, the machine cannot identify it. Moreover this instrument is not distinguished the difference of distribution about 1nm~3nm. So, "Defect detector" is difficult to handle the data for potential weak point far lower than target CD. In order to solve those problems, another method is needed. In this paper, we introduce the analysis method of the DRAM Cell Pattern Hotspot.

Dosimetry measurements using Timepix in mixed radiation fields induced by heavy ions; comparison with standard dosimetry methods

PubMed Central

Ploc, Ondrej; Kubancak, Jan; Sihver, Lembit; Uchihori, Yukio; Jakubek, Jan; Ambrozova, Iva; Molokanov, Alexander; Pinsky, Lawrence

2014-01-01

Objective of our research was to explore capabilities of Timepix for its use as a single dosemeter and LET spectrometer in mixed radiation fields created by heavy ions. We exposed it to radiation field (i) at heavy ion beams at HIMAC, Chiba, Japan, (ii) in the CERN's high-energy reference field (CERF) facility at Geneva, France/Switzerland, (iii) in the exposure room of the proton therapy laboratory at JINR, Dubna, Russia, and (iv) onboard aircraft. We compared the absolute values of dosimetric quantities obtained with Timepix and with other dosemeters and spectrometers like tissue-equivalent proportional counter (TEPC) Hawk, silicon detector Liulin, and track-etched detectors (TEDs).

Tests of a Roman Pot prototype for the TOTEM experiment

NASA Astrophysics Data System (ADS)

Deile, M.; Alagoz, E.; Anelli, G.; Antchev, G.; Ayache, M.; Caspers, F.; Dimovasili, E.; Dinapoli, R.; Drouhin, F.; Eggert, K.; Escourrou, J.L; Fochler, O.; Gill, K.; Grabit, R.; Haung, F.; Jarron, P.; Kaplon, J.; Kroyer, T.; Luntama, T.; Macina, D.; Mattelon, E.; Niewiadomski, H.; Mirabito, L.; Noschis, E.P.; Oriunno, M.; Park, a.; Perrot, A.-L.; Pirotte, O.; Quetsch, J.M.; Regnier, F.; Ruggiero, G.; Saramad, S.; Siegrist, P.; Snoeys, W.; sSouissi, T.; Szczygiel, R.; Troska, J.; Vasey, F.; Verdier, A.; Da Vià, C.; Hasi, J.; Kok, A.; Watts, S.; Kašpar, J.; Kundrát, V.; Lokajíček, M.V.; Smotlacha, J.; Avati, V.; Järvinen, M.; Kalliokoski, M.; Kalliopuska, J.; Kurvinen, K.; Lauhakangas, R.; Oljemark, F.; Orava, R.; Österberg, K.; Palmieri, V.; Saarikko, H.; Soininen, A.; Boccone, V.; Bozzo, M.; Buzzo, A.; Cuneo, S.; Ferro, F.; Macrí, M.; Minutoli, S.; Morelli, A.; Musico, P.; Negri, M.; Santroni, A.; Sette, G.; Sobol, A.; sBerardi, V.; Catanesi, M.G.; Radicioni, E.

The TOTEM collaboration has developed and tested the first prototype of its Roman Pots to be operated in the LHC. TOTEM Roman Pots contain stacks of 10 silicon detectors with strips oriented in two orthogonal directions. To measure proton scattering angles of a few microradians, the detectors will approach the beam centre to a distance of 10 sigma + 0.5 mm (= 1.3 mm). Dead space near the detector edge is minimised by using two novel "edgeless" detector technologies. The silicon detectors are used both for precise track reconstruction and for triggering. The first full-sized prototypes of both detector technologies as well as their read-out electronics have been developed, built and operated. The tests took place first in a fixed-target muon beam at CERN's SPS, and then in the proton beam-line of the SPS accelerator ring. We present the test beam results demonstrating the successful functionality of the system despite slight technical shortcomings to be improved in the near future.

A space- and time-resolved single photon counting detector for fluorescence microscopy and spectroscopy

PubMed Central

Michalet, X.; Siegmund, O.H.W.; Vallerga, J.V.; Jelinsky, P.; Millaud, J.E.; Weiss, S.

2017-01-01

We have recently developed a wide-field photon-counting detector having high-temporal and high-spatial resolutions and capable of high-throughput (the H33D detector). Its design is based on a 25 mm diameter multi-alkali photocathode producing one photo electron per detected photon, which are then multiplied up to 107 times by a 3-microchannel plate stack. The resulting electron cloud is proximity focused on a cross delay line anode, which allows determining the incident photon position with high accuracy. The imaging and fluorescence lifetime measurement performances of the H33D detector installed on a standard epifluorescence microscope will be presented. We compare them to those of standard single-molecule detectors such as single-photon avalanche photodiode (SPAD) or electron-multiplying camera using model samples (fluorescent beads, quantum dots and live cells). Finally, we discuss the design and applications of future generation of H33D detectors for single-molecule imaging and high-throughput study of biomolecular interactions. PMID:29479130

Indium-bump-free antimonide superlattice membrane detectors on silicon substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zamiri, M., E-mail: mzamiri@chtm.unm.edu, E-mail: skrishna@chtm.unm.edu; Klein, B.; Schuler-Sandy, T.

2016-02-29

We present an approach to realize antimonide superlattices on silicon substrates without using conventional Indium-bump hybridization. In this approach, PIN superlattices are grown on top of a 60 nm Al{sub 0.6}Ga{sub 0.4}Sb sacrificial layer on a GaSb host substrate. Following the growth, the individual pixels are transferred using our epitaxial-lift off technique, which consists of a wet-etch to undercut the pixels followed by a dry-stamp process to transfer the pixels to a silicon substrate prepared with a gold layer. Structural and optical characterization of the transferred pixels was done using an optical microscope, scanning electron microscopy, and photoluminescence. The interface betweenmore » the transferred pixels and the new substrate was abrupt, and no significant degradation in the optical quality was observed. An Indium-bump-free membrane detector was then fabricated using this approach. Spectral response measurements provided a 100% cut-off wavelength of 4.3 μm at 77 K. The performance of the membrane detector was compared to a control detector on the as-grown substrate. The membrane detector was limited by surface leakage current. The proposed approach could pave the way for wafer-level integration of photonic detectors on silicon substrates, which could dramatically reduce the cost of these detectors.« less

Remote Sensing and Quantization of Analog Sensors

NASA Technical Reports Server (NTRS)

Strauss, Karl F.

2011-01-01

This method enables sensing and quantization of analog strain gauges. By manufacturing a piezoelectric sensor stack in parallel (physical) with a piezoelectric actuator stack, the capacitance of the sensor stack varies in exact proportion to the exertion applied by the actuator stack. This, in turn, varies the output frequency of the local sensor oscillator. The output, F(sub out), is fed to a phase detector, which is driven by a stable reference, F(sub ref). The output of the phase detector is a square waveform, D(sub out), whose duty cycle, t(sub W), varies in exact proportion according to whether F(sub out) is higher or lower than F(sub ref). In this design, should F(sub out) be precisely equal to F(sub ref), then the waveform has an exact 50/50 duty cycle. The waveform, D(sub out), is of generally very low frequency suitable for safe transmission over long distances without corruption. The active portion of the waveform, t(sub W), gates a remotely located counter, which is driven by a stable oscillator (source) of such frequency as to give sufficient digitization of t(sub W) to the resolution required by the application. The advantage to this scheme is that it negates the most-common, present method of sending either very low level signals (viz. direct output from the sensors) across great distances (anything over one-half meter) or the need to transmit widely varying higher frequencies over significant distances thereby eliminating interference [both in terms of beat frequency generation and in-situ EMI (electromagnetic interference)] caused by ineffective shielding. It also results in a significant reduction in shielding mass.

Plasma etched surface scanning inspection recipe creation based on bidirectional reflectance distribution function and polystyrene latex spheres

NASA Astrophysics Data System (ADS)

Saldana, Tiffany; McGarvey, Steve; Ayres, Steve

2014-04-01

The continual increasing demands upon Plasma Etching systems to self-clean and continue Plasma Etching with minimal downtime allows for the examination of SiCN, SiO2 and SiN defectivity based upon Surface Scanning Inspection Systems (SSIS) wafer scan results. Historically all Surface Scanning Inspection System wafer scanning recipes have been based upon Polystyrene Spheres wafer deposition for each film stack and the subsequent creation of light scattering sizing response curves. This paper explores the feasibility of the elimination of Polystyrene Latex Sphere (PSL) and/or process particle deposition on both filmed and bare Silicon wafers prior to Surface Scanning Inspection System recipe creation. The study will explore the theoretical maximal Surface Scanning Inspection System sensitivity based on PSL recipe creation in conjunction with the maximal sensitivity derived from Bidirectional Reflectance Distribution Function (BRDF) maximal sensitivity modeling recipe creation. The surface roughness (Root Mean Square) of plasma etched wafers varies dependent upon the process film stack. Decrease of the root mean square value of the wafer sample surface equates to higher surface scanning inspection system sensitivity. Maximal sensitivity SSIS scan results from bare and filmed wafers inspected with recipes created based upon Polystyrene/Particle Deposition and recipes created based upon BRDF modeling will be overlaid against each other to determine maximal sensitivity and capture rate for each type of recipe that was created with differing recipe creation modes. A statistically valid sample of defects from each Surface Scanning Inspection system recipe creation mode and each bare wafer/filmed substrate will be reviewed post SSIS System processing on a Defect Review Scanning Electron Microscope (DRSEM). Native defects, Polystyrene Latex Spheres will be collected from each statistically valid defect bin category/size. The data collected from the DRSEM will be utilized to determine the maximum sensitivity capture rate for each recipe creation mode. Emphasis will be placed upon the sizing accuracy of PSL versus BRDF modeling results based upon automated DRSEM defect sizing. An examination the scattering response for both Mie and Rayleigh will be explored in relationship to the reported sizing variance of the SSIS to make a determination of the absolute sizing accuracy of the recipes there were generated based upon BRDF modeling. This paper explores both the commercial and technical considerations of the elimination of PSL deposition as a precursor to SSIS recipe creation. Successful integration of BRDF modeling into the technical aspect of SSIS recipe creation process has the potential to dramatically reduce the recipe creation timeline and vetting period. Integration of BRDF modeling has the potential to greatly reduce the overhead operation costs for High Volume Manufacturing sites by eliminating the associated costs of third party PSL deposition.

Fabricating High-Resolution X-Ray Collimators

NASA Technical Reports Server (NTRS)

Appleby, Michael; Atkinson, James E.; Fraser, Iain; Klinger, Jill

2008-01-01

A process and method for fabricating multi-grid, high-resolution rotating modulation collimators for arcsecond and sub-arcsecond x-ray and gamma-ray imaging involves photochemical machining and precision stack lamination. The special fixturing and etching techniques that have been developed are used for the fabrication of multiple high-resolution grids on a single array substrate. This technology has application in solar and astrophysics and in a number of medical imaging applications including mammography, computed tomography (CT), single photon emission computed tomography (SPECT), and gamma cameras used in nuclear medicine. This collimator improvement can also be used in non-destructive testing, hydrodynamic weapons testing, and microbeam radiation therapy.

40 CFR 63.323 - Test methods and monitoring.

Code of Federal Regulations, 2012 CFR

2012-07-01

... downstream from any flow disturbance such as a bend, expansion, contraction, or outlet; downstream from no other inlet; and 2 stack or duct diameters upstream from any flow disturbance such as a bend, expansion... monitoring by inserting the colorimetric detector or PCE gas analyzer tube into the open space above the...

40 CFR 63.323 - Test methods and monitoring.

Code of Federal Regulations, 2014 CFR

2014-07-01

... downstream from any flow disturbance such as a bend, expansion, contraction, or outlet; downstream from no other inlet; and 2 stack or duct diameters upstream from any flow disturbance such as a bend, expansion... monitoring by inserting the colorimetric detector or PCE gas analyzer tube into the open space above the...

40 CFR 63.323 - Test methods and monitoring.

Code of Federal Regulations, 2013 CFR

2013-07-01

... downstream from any flow disturbance such as a bend, expansion, contraction, or outlet; downstream from no other inlet; and 2 stack or duct diameters upstream from any flow disturbance such as a bend, expansion... monitoring by inserting the colorimetric detector or PCE gas analyzer tube into the open space above the...

40 CFR 63.9631 - What are my monitoring requirements?

Code of Federal Regulations, 2014 CFR

2014-07-01

... inspections, vibration detectors, or equivalent means. (b) Except as provided in paragraph (c) of this section... average opacity of emissions exiting each control device stack according to the requirements in § 63.9633... pollution control device other than a baghouse, wet scrubber, dry electrostatic precipitator, or wet...

40 CFR 63.9631 - What are my monitoring requirements?

Code of Federal Regulations, 2012 CFR

2012-07-01

... inspections, vibration detectors, or equivalent means. (b) Except as provided in paragraph (c) of this section... average opacity of emissions exiting each control device stack according to the requirements in § 63.9633... pollution control device other than a baghouse, wet scrubber, dry electrostatic precipitator, or wet...

40 CFR 63.9631 - What are my monitoring requirements?

Code of Federal Regulations, 2013 CFR

2013-07-01

... inspections, vibration detectors, or equivalent means. (b) Except as provided in paragraph (c) of this section... average opacity of emissions exiting each control device stack according to the requirements in § 63.9633... pollution control device other than a baghouse, wet scrubber, dry electrostatic precipitator, or wet...

An ultra-thin Schottky diode as a transmission particle detector for biological microbeams.

PubMed

Grad, Michael; Harken, Andrew; Randers-Pehrson, Gerhard; Attinger, Daniel; Brenner, David J

2012-12-01

We fabricated ultrathin metal-semiconductor Schottky diodes for use as transmission particle detectors in the biological microbeam at Columbia University's Radiological Research Accelerator Facility (RARAF). The RARAF microbeam can deliver a precise dose of ionizing radiation in cell nuclei with sub-micron precision. To ensure an accurate delivery of charged particles, the facility currently uses a commercial charged-particle detector placed after the sample. We present here a transmission detector that will be placed between the particle accelerator and the biological specimen, allowing the irradiation of samples that would otherwise block radiation from reaching a detector behind the sample. Four detectors were fabricated with co-planar gold and aluminum electrodes thermally evaporated onto etched n-type crystalline silicon substrates, with device thicknesses ranging from 8.5 μm - 13.5 μm. We show coincident detections and pulse-height distributions of charged particles in both the transmission detector and the commercial detector above it. Detections are demonstrated at a range of operating conditions, including incoming particle type, count rate, and beam location on the detectors. The 13.5 μm detector is shown to work best to detect 2.7 MeV protons (H + ), and the 8.5 μm detector is shown to work best to detect 5.4 MeV alpha particles ( 4 He ++ ). The development of a transmission detector enables a range of new experiments to take place at RARAF on radiation-stopping samples such as thick tissues, targets that need immersion microscopy, and integrated microfluidic devices for handling larger quantities of cells and small organisms.

An ultra-thin Schottky diode as a transmission particle detector for biological microbeams

PubMed Central

Harken, Andrew; Randers-Pehrson, Gerhard; Attinger, Daniel; Brenner, David J.

2013-01-01

We fabricated ultrathin metal-semiconductor Schottky diodes for use as transmission particle detectors in the biological microbeam at Columbia University’s Radiological Research Accelerator Facility (RARAF). The RARAF microbeam can deliver a precise dose of ionizing radiation in cell nuclei with sub-micron precision. To ensure an accurate delivery of charged particles, the facility currently uses a commercial charged-particle detector placed after the sample. We present here a transmission detector that will be placed between the particle accelerator and the biological specimen, allowing the irradiation of samples that would otherwise block radiation from reaching a detector behind the sample. Four detectors were fabricated with co-planar gold and aluminum electrodes thermally evaporated onto etched n-type crystalline silicon substrates, with device thicknesses ranging from 8.5 μm – 13.5 μm. We show coincident detections and pulse-height distributions of charged particles in both the transmission detector and the commercial detector above it. Detections are demonstrated at a range of operating conditions, including incoming particle type, count rate, and beam location on the detectors. The 13.5 μm detector is shown to work best to detect 2.7 MeV protons (H+), and the 8.5 μm detector is shown to work best to detect 5.4 MeV alpha particles (4He++). The development of a transmission detector enables a range of new experiments to take place at RARAF on radiation-stopping samples such as thick tissues, targets that need immersion microscopy, and integrated microfluidic devices for handling larger quantities of cells and small organisms. PMID:24058378

Characterization of large area ZnS(Ag) detector for gross alpha and beta activity measurements in tap water plants

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lunardon, M.; Cester, D.; Mistura, G.

2015-07-01

In this work we present the characterization of a large area 200 x 200 mm{sup 2} EJ-444 scintillation detector to be used for monitoring gross alpha and beta activity in tap water plants. Specific tests were performed to determine the best setup to readout the light from the detector side in order to have the possibility to stack many detectors and get a compact device with total active area of the order of 1 m{sup 2}. Alpha/Beta discrimination, efficiency and homogeneity tests were carried out with alpha and beta sources. Background from ambient radioactivity was measured as well. Alpha/beta real-timemore » monitoring in drinking water is a goal of the EU project TAWARA{sub R}TM. (authors)« less

Surface dose measurements with commonly used detectors: a consistent thickness correction method.

PubMed

Reynolds, Tatsiana A; Higgins, Patrick

2015-09-08

The purpose of this study was to review application of a consistent correction method for the solid state detectors, such as thermoluminescent dosimeters (chips (cTLD) and powder (pTLD)), optically stimulated detectors (both closed (OSL) and open (eOSL)), and radiochromic (EBT2) and radiographic (EDR2) films. In addition, to compare measured surface dose using an extrapolation ionization chamber (PTW 30-360) with other parallel plate chambers RMI-449 (Attix), Capintec PS-033, PTW 30-329 (Markus) and Memorial. Measurements of surface dose for 6MV photons with parallel plate chambers were used to establish a baseline. cTLD, OSLs, EDR2, and EBT2 measurements were corrected using a method which involved irradiation of three dosimeter stacks, followed by linear extrapolation of individual dosimeter measurements to zero thickness. We determined the magnitude of correction for each detector and compared our results against an alternative correction method based on effective thickness. All uncorrected surface dose measurements exhibited overresponse, compared with the extrapolation chamber data, except for the Attix chamber. The closest match was obtained with the Attix chamber (-0.1%), followed by pTLD (0.5%), Capintec (4.5%), Memorial (7.3%), Markus (10%), cTLD (11.8%), eOSL (12.8%), EBT2 (14%), EDR2 (14.8%), and OSL (26%). Application of published ionization chamber corrections brought all the parallel plate results to within 1% of the extrapolation chamber. The extrapolation method corrected all solid-state detector results to within 2% of baseline, except the OSLs. Extrapolation of dose using a simple three-detector stack has been demonstrated to provide thickness corrections for cTLD, eOSLs, EBT2, and EDR2 which can then be used for surface dose measurements. Standard OSLs are not recommended for surface dose measurement. The effective thickness method suffers from the subjectivity inherent in the inclusion of measured percentage depth-dose curves and is not recommended for these types of measurements.

A frequency and sensitivity tunable microresonator array for high-speed quantum processor readout

DOE Office of Scientific and Technical Information (OSTI.GOV)

Whittaker, J. D., E-mail: jwhittaker@dwavesys.com; Swenson, L. J.; Volkmann, M. H.

Superconducting microresonators have been successfully utilized as detection elements for a wide variety of applications. With multiplexing factors exceeding 1000 detectors per transmission line, they are the most scalable low-temperature detector technology demonstrated to date. For high-throughput applications, fewer detectors can be coupled to a single wire but utilize a larger per-detector bandwidth. For all existing designs, fluctuations in fabrication tolerances result in a non-uniform shift in resonance frequency and sensitivity, which ultimately limits the efficiency of bandwidth utilization. Here, we present the design, implementation, and initial characterization of a superconducting microresonator readout integrating two tunable inductances per detector. Wemore » demonstrate that these tuning elements provide independent control of both the detector frequency and sensitivity, allowing us to maximize the transmission line bandwidth utilization. Finally, we discuss the integration of these detectors in a multilayer fabrication stack for high-speed readout of the D-Wave quantum processor, highlighting the use of control and routing circuitry composed of single-flux-quantum loops to minimize the number of control wires at the lowest temperature stage.« less

EUV patterning using CAR or MOX photoresist at low dose exposure for sub 36nm pitch

NASA Astrophysics Data System (ADS)

Thibaut, Sophie; Raley, Angélique; Lazarrino, Frederic; Mao, Ming; De Simone, Danilo; Piumi, Daniele; Barla, Kathy; Ko, Akiteru; Metz, Andrew; Kumar, Kaushik; Biolsi, Peter

2018-04-01

The semiconductor industry has been pushing the limits of scalability by combining 193nm immersion lithography with multi-patterning techniques for several years. Those integrations have been declined in a wide variety of options to lower their cost but retain their inherent variability and process complexity. EUV lithography offers a much desired path that allows for direct print of line and space at 36nm pitch and below and effectively addresses issues like cycle time, intra-level overlay and mask count costs associated with multi-patterning. However it also brings its own sets of challenges. One of the major barrier to high volume manufacturing implementation has been hitting the 250W power exposure required for adequate throughput [1]. Enabling patterning using a lower dose resist could help move us closer to the HVM throughput targets assuming required performance for roughness and pattern transfer can be met. As plasma etching is known to reduce line edge roughness on 193nm lithography printed features [2], we investigate in this paper the level of roughness that can be achieved on EUV photoresist exposed at a lower dose through etch process optimization into a typical back end of line film stack. We will study 16nm lines printed at 32 and 34nm pitch. MOX and CAR photoresist performance will be compared. We will review step by step etch chemistry development to reach adequate selectivity and roughness reduction to successfully pattern the target layer.

In situ chemical functionalization of gallium nitride with phosphonic acid derivatives during etching.

PubMed

Wilkins, Stewart J; Greenough, Michelle; Arellano, Consuelo; Paskova, Tania; Ivanisevic, Albena

2014-03-04

In situ functionalization of polar (c plane) and nonpolar (a plane) gallium nitride (GaN) was performed by adding (3-bromopropyl) phosphonic acid or propyl phosphonic acid to a phosphoric acid etch. The target was to modulate the emission properties and oxide formation of GaN, which was explored through surface characterization with atomic force microscopy, X-ray photoelectron spectroscopy, photoluminescence (PL), inductively coupled plasma-mass spectrometry, and water contact angle. The use of (3-bromopropyl) phosphonic acid and propyl phosphonic acid in phosphoric acid demonstrated lower amounts of gallium oxide formation and greater hydrophobicity for both sample sets, while also improving PL emission of polar GaN samples. In addition to crystal orientation, growth-related factors such as defect density in bulk GaN versus thin GaN films residing on sapphire substrates were investigated as well as their responses to in situ functionalization. Thin nonpolar GaN layers were the most sensitive to etching treatments due in part to higher defect densities (stacking faults and threading dislocations), which accounts for large surface depressions. High-quality GaN (both free-standing bulk polar and bulk nonpolar) demonstrated increased sensitivity to oxide formation. Room-temperature PL stands out as an excellent technique to identify nonradiative recombination as observed in the spectra of heteroepitaxially grown GaN samples. The chemical methods applied to tune optical and physical properties of GaN provide a quantitative framework for future novel chemical and biochemical sensor development.

Fundamentals of EUV resist-inorganic hardmask interactions

NASA Astrophysics Data System (ADS)

Goldfarb, Dario L.; Glodde, Martin; De Silva, Anuja; Sheshadri, Indira; Felix, Nelson M.; Lionti, Krystelle; Magbitang, Teddie

2017-03-01

High resolution Extreme Ultraviolet (EUV) patterning is currently limited by EUV resist thickness and pattern collapse, thus impacting the faithful image transfer into the underlying stack. Such limitation requires the investigation of improved hardmasks (HMs) as etch transfer layers for EUV patterning. Ultrathin (<5nm) inorganic HMs can provide higher etch selectivity, lower post-etch LWR, decreased defectivity and wet strippability compared to spin-on hybrid HMs (e.g., SiARC), however such novel layers can induce resist adhesion failure and resist residue. Therefore, a fundamental understanding of EUV resist-inorganic HM interactions is needed in order to optimize the EUV resist interfacial behavior. In this paper, novel materials and processing techniques are introduced to characterize and improve the EUV resist-inorganic HM interface. HM surface interactions with specific EUV resist components are evaluated for open-source experimental resist formulations dissected into its individual additives using EUV contrast curves as an effective characterization method to determine post-development residue formation. Separately, an alternative adhesion promoter platform specifically tailored for a selected ultrathin inorganic HM based on amorphous silicon (aSi) is presented and the mitigation of resist delamination is exemplified for the cases of positive-tone and negative-tone development (PTD, NTD). Additionally, original wafer priming hardware for the deposition of such novel adhesion promoters is unveiled. The lessons learned in this work can be directly applied to the engineering of EUV resist materials and processes specifically designed to work on such novel HMs.

Integration of e-beam direct write in BEOL processes of 28nm SRAM technology node using mix and match

NASA Astrophysics Data System (ADS)

Gutsch, Manuela; Choi, Kang-Hoon; Hanisch, Norbert; Hohle, Christoph; Seidel, Robert; Steidel, Katja; Thrun, Xaver; Werner, Thomas

2014-10-01

Many efforts were spent in the development of EUV technologies, but from a customer point of view EUV is still behind expectations. In parallel since years maskless lithography is included in the ITRS roadmap wherein multi electron beam direct patterning is considered as an alternative or complementary approach for patterning of advanced technology nodes. The process of multi beam exposures can be emulated by single beam technologies available in the field. While variable shape-beam direct writers are already used for niche applications, the integration capability of e-beam direct write at advanced nodes has not been proven, yet. In this study the e-beam lithography was implemented in the BEoL processes of the 28nm SRAM technology. Integrated 300mm wafers with a 28nm back-end of line (BEoL) stack from GLOBALFOUNDRIES, Dresden, were used for the experiments. For the patterning of the Metal layer a Mix and Match concept based on the sequence litho - etch - litho - etch (LELE) was developed and evaluated wherein several exposure fields were blanked out during the optical exposure. E-beam patterning results of BEoL Metal and Via layers are presented using a 50kV VISTEC SB3050DW variable shaped electron beam direct writer at Fraunhofer IPMS-CNT. Etch results are shown and compared to the POR. In summary we demonstrate the integration capability of EBDW into a productive CMOS process flow at the example of the 28nm SRAM technology node.

Design and grayscale fabrication of beamfanners in a silicon substrate

NASA Astrophysics Data System (ADS)

Ellis, Arthur Cecil

2001-11-01

This dissertation addresses important first steps in the development of a grayscale fabrication process for multiple phase diffractive optical elements (DOS's) in silicon. Specifically, this process was developed through the design, fabrication, and testing of 1-2 and 1-4 beamfanner arrays for 5-micron illumination. The 1-2 beamfanner arrays serve as a test-of- concept and basic developmental step toward the construction of the 1-4 beamfanners. The beamfanners are 50 microns wide, and have features with dimensions of between 2 and 10 microns. The Iterative Annular Spectrum Approach (IASA) method, developed by Steve Mellin of UAH, and the Boundary Element Method (BEM) are the design and testing tools used to create the beamfanner profiles and predict their performance. Fabrication of the beamfanners required the techniques of grayscale photolithography and reactive ion etching (RIE). A 2-3micron feature size 1-4 silicon beamfanner array was fabricated, but the small features and contact photolithographic techniques available prevented its construction to specifications. A second and more successful attempt was made in which both 1-4 and 1-2 beamfanner arrays were fabricated with a 5-micron minimum feature size. Photolithography for the UAH array was contracted to MEMS-Optical of Huntsville, Alabama. A repeatability study was performed, using statistical techniques, of 14 photoresist arrays and the subsequent RIE process used to etch the arrays in silicon. The variance in selectivity between the 14 processes was far greater than the variance between the individual etched features within each process. Specifically, the ratio of the variance of the selectivities averaged over each of the 14 etch processes to the variance of individual feature selectivities within the processes yielded a significance level below 0.1% by F-test, indicating that good etch-to-etch process repeatability was not attained. One of the 14 arrays had feature etch-depths close enough to design specifications for optical testing, but 5- micron IR illumination of the 1-4 and 1-2 beamfanners yielded no convincing results of beam splitting in the detector plane 340 microns from the surface of the beamfanner array.

[The durability of three self-etch adhesives bonded to dentin].

PubMed

Tian, Fu-Cong; Wang, Xiao-Yan; Gao, Xue-Jun

2013-04-01

To investigate the durability of self-etch adhesives bonded to dentin in vitro. Forty-two extracted human molars were selected and occlusal dentin surfaces were exposed. The teeth were randomly distributed into three groups based on adhesives applied. The one-step self-etch adhesive B(Adper Prompt) and C(G-Bond) and two-step self-etch adhesive A (Clearfil SE bond) were used. After application of the adhesives to the dentin surfaces, composite crowns were built up, after 24 h water storage, the teeth were sectioned longitudinally into sticks (1.0 mm×1.0 mm bonding area) for microtensile testing or slabs (1 mm thick) for scanning electron microscopec (SEM) observation. Bonding strength (mTBS) and nano-leakage were evaluated immediately after cutting or after 6 months in water. The mTBS was analyzed using one-way ANOVA (SPSS 13.0). The nanoleakage was observed by SEM with a backscattered electron detector. Both adhesives and water storage time affected the mTBS. All adhesives showed decreased bond strength after six-month water aging [A dropped from (40.60 ± 5.76) MPa to (36.04 ± 3.15) MPa; B dropped from (19.06 ± 1.50) MPa to (11.19 ± 1.97) MPa; C dropped from (17.75 ± 1.10) MPa to (9.14 ± 1.15) MPa] (P < 0.05). B and C showed lower mTBS than A after aging (P < 0.05). Compared to A, nanoleakage was more obvious after aging for B and C. All self-etch adhesives tested were probably influenced by water aging, however, the two-step adhesive showed better durability than the one-step adhesives.

[Influence of thermalcycling on bonding durability of self-etch adhesives with dentin].

PubMed

Tian, Fu-cong; Wang, Xiao-yan; Gao, Xue-jun

2014-04-18

To investigate influence of thermalcycling on the bonding durability of two one-step products [Adper Prompt (AP) and G-bond (GB)] and one two-step self-etching adhesive [Clearfil SE bond (SE)] with dentin in vitro. Forty-two extracted human molars were selected. The superficial dentin was exposed by grinding off the enamel. The teeth were randomly distributed into six groups with varied bonding protocols. The adhesives were applied to the dentin surface. Composite crowns were built up, then the samples were cut longitudinally into sticks with 1.0 mm×1.0 mm bonding area [for microtensile bond strength (MTBS) testing] or 1.0 mm thick slabs (for nanoleakage observation). Bonding performance was evaluated with or without thermalcyling. For the MTBS testing, the strength values were statistically analysed using One-Way ANOVA. Four slabs in each group were observed for nanoleakage by SEM with a backscattered electron detector. Thermalcycling procedures affected MTBS. In the two one-step groups, the MTBS decreased significantly (P<0.05) after thermalcycling [AP group from (19.06±1.50) MPa to (12.62±2.10) MPa; GB group from (17.75±1.10) MPa to (6.24±0.42)MPa]. But in SE groups, MTBS did not significantly affect [(45.80±2.97) MPa compared with(40.60±5.76) MPa]. As a whole, one-step self-etching adhesives showed lower MTBS than two-step bonding system after aging.For AP and GB, continuous nanoleakage appearance was notable and more obvious than for SE. Thermalcycling can affect the bonding performance of self-etch adhesives including decrease of bond strength and nanoleakage pattern. one-step self-etch adhesives showed more obvious change compared with their two-step counterparts.

Measurements of LET distribution and dose equivalent onboard the Space Shuttle IML-2 (STS-65) and S/MM#4 (STS-79).

PubMed

Hayashi, T; Doke, T; Kikuchi, J; Sakaguchi, T; Takeuchi, R; Takashima, T; Kobayashi, M; Terasawa, K; Takahashi, K; Watanabe, A; Kyan, A; Hasebe, N; Kashiwagi, T; Ogura, K; Nagaoka, S; Kato, M; Nakano, T; Takahashi, S; Yamanaka, H; Yamaguchi, K; Badhwar, G D

1997-12-01

Space radiation dosimetry measurements have been made onboard the Space Shuttle STS-65 in the Second International Microgravity Laboratory (IML-2: 28.5 degrees x 300 km: 14.68 days) and the STS-79 in the 4th Shuttle MIR mission (S/MM#4: 51.6 degrees x 300-400km: 10.2 days). In these measurements, three kinds of detectors were used; one is a newly developed active detector telescope called "Real-time Radiation Monitoring Device (RRMD-I for IML-2 and RRMD-II with improved triggering system for S/MM#4)" utilizing silicon semi-conductor detectors and the other detectors are conventional passive detectors of thermoluminescence dosimeters (TLDs) and CR-39 plastic track detectors. The main contribution to dose equivalent for particles with LET > 5.0 keV/micrometer (IML-2) and LET > 3.5 keV/micrometer (S/MM#4) is seen to be due to galactic cosmic rays (GCRs) and the contribution of the South Atlantic Anomaly (SAA) is less than 5% (IML-2: 28.5 degrees x 300 km) and 15% (S/MM#4: 51.6 degrees x 400 km) in the above RRMD LET detection conditions. For the whole LET range (> 0.2 kev/micrometer) obtained by TLDs and CR-39 in these two typical orbits (a small inclination x low altitude and a large inclination x high altitude), absorbed dose rates range from 94 to 114 microGy/day, dose equivalent rates from 186 to 207 microSv/day and average quality factors from 1.82 to 2.00 depending on the locations and directions of detectors inside the Spacelab at the highly protected IML-2 orbit (28.5 degrees x 300 km), and also, absorbed dose rates range from 290 to 367 microGy/day, dose equivalent rates from 582 to 651 microSv/day and average quality factors from 1.78 to 2.01 depending on the dosimeter packages around the RRMD-II "Detector Unit" at the S/MM#4 orbit (5l.6 degrees x 400km). In general, it is seen that absorbed doses depend on the orbit altitude (SAA trapped particles contribution dominant) and dose equivalents on the orbit inclination (GCR contribution dominant). The LET distributions obtained by two different types of active and passive detectors, RRMDs and CR-39, are in good agreement for LET of 15 - 200 kev/micrometer and difference of these distributions in the regions of LET < 15 kev/micrometer and LET > 200 kev/micrometer can be explained by considering characteristics of CR-39 etched track formation especially for the low LET tracks and chemical etching conditions.

Measurements of LET distribution and dose equivalent onboard the Space Shuttle IML-2 (STS-65) and S/MM#4 (STS-79)

NASA Technical Reports Server (NTRS)

Hayashi, T.; Doke, T.; Kikuchi, J.; Sakaguchi, T.; Takeuchi, R.; Takashima, T.; Kobayashi, M.; Terasawa, K.; Takahashi, K.; Watanabe, A.;

Construction of the Zeus forward/rear calorimeter modules at NIKHEF

NASA Astrophysics Data System (ADS)

Blankers, R.; Engelen, J.; Geerinck, H.; Homma, J.; Hunck, P.; Dekoning, N.; Kooijman, P.; Korporaal, A.; Loos, R.; Straver, J.

1990-07-01

The design and assembly procedure of the FCAL/RCAL (Forward (in proton direction) Calorimeter/Rear (in electron direction) Calorimeter) of the Zeus detector to study electron proton interactions at Desy, Hamburg (Germany, F.R.) are detailed. The main components of the modules are described: steel C-frame which provides the overall mechanical module structure; a stack of depleted uranium plates and scintillator plates; wavelength shifter material, mounted in cassettes for the readout of the scintillator light; stainless steel straps which compress the stack and fix it to the C-frame. Finite element techniques for module force calculations are outlined. The module assembly and transport and calibration tools are described.

A facile approach to prepare porous cup-stacked carbon nanotube with high performance in adsorption of methylene blue.

PubMed

Gong, Jiang; Liu, Jie; Jiang, Zhiwei; Wen, Xin; Mijowska, Ewa; Tang, Tao; Chen, Xuecheng

2015-05-01

Novel porous cup-stacked carbon nanotube (P-CSCNT) with special stacked morphology consisting of many truncated conical graphene layers was synthesized by KOH activating CSCNT from polypropylene. The morphology, microstructure, textural property, phase structure, surface element composition and thermal stability of P-CSCNT were investigated by field-emission scanning electron microscope, transmission electron microscope (TEM), high-resolution TEM, N2 sorption, X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy and thermal gravimetric analysis. A part of oblique graphitic layers were etched by KOH, and many holes with a diameter of several to a doze of nanometers connecting inner tube with outside were formed, which endowed P-CSCNT with high specific surface area (558.7 m(2)/g), large pore volume (1.993 cm(3)/g) and abundant surface functional groups. Subsequently, P-CSCNT was used for adsorption of methylene blue (MB) from wastewater. Langmuir model closely fitted the adsorption results, and the maximum adsorption capacity of P-CSCNT was as high as 319.1mg/g. This was ascribed to multiple adsorption mechanisms including pore filling, hydrogen bonding, π-π and electrostatic interactions. Pseudo second-order kinetic model was more valid to describe the adsorption behavior. Besides, P-CSCNT showed good recyclablity and reusability. These results demonstrated that P-CSCNT had potential application in wastewater treatment. Copyright © 2015 Elsevier Inc. All rights reserved.

Tests of by-pass diodes at cryogenic temperatures for the KATRIN magnets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gil, W.; Bolz, H.; Jansen, A.

The Karlsruhe Tritium Neutrino experiment (KATRIN) requires a series of superconducting solenoid magnets for guiding beta-electrons from the source to the detector. By-pass diodes will operate at liquid helium temperatures to protect the superconducting magnets and bus bars in case of quenches. The operation conditions of the by-pass diodes depend on the different magnet systems of KATRIN. Therefore, different diode stacks are designed with adequate copper heat sinks assuming adiabatic conditions. The by-pass diode stacks have been submitted to cold tests both at liquid nitrogen and liquid helium temperatures for checking operation conditions. This report presents the test set upmore » and first results of the diode characteristics at 300 K and 77 K, as well as of endurance tests of the diode stacks at constant current load at 77 K and 4.2 K.« less

Nanoscale Quantum Confined Structures with Photon Controlling Cavities

DTIC Science & Technology

2011-07-13

cleanroom using standard techniques of mesa etching, passivation and contact metal deposition. The pixels consisted of top- illuminated 410x410 µm2 mesas ...the fabricated detector. The mesa , top metal, bottom metal and plasmonic metal can be observed. The square pattern at the center is the fabricated...hollow symbols) 400x400m2 mesa device. Approved for public release; distribution is unlimited. 16 control sample. Secondly, since the R.M.S

Wavelength-Tunable IR Detector based on Suspended Bilayer Graphene Micro Ribbons

DTIC Science & Technology

2013-11-05

Substrates: Reduced Etching via Suppressed Catalytic Hydrogenation Using C2H4,” Chemistry of Materials , DOI : 10.1021/cm402052z (2013) 3. K. Kumar...studied the lesser known photophysics in CVD material . To this end we designed, fabricated, and characterized in Year One a device with suspended...optimization, we have discovered a new growth mode of two-lobed symmetrical curvilinear graphene domains. After optimization the CVD material quality was

CIP (cleaning-in-place) stability of AlGaN/GaN pH sensors.

PubMed

Linkohr, St; Pletschen, W; Schwarz, S U; Anzt, J; Cimalla, V; Ambacher, O

2013-02-20

The CIP stability of pH sensitive ion-sensitive field-effect transistors based on AlGaN/GaN heterostructures was investigated. For epitaxial AlGaN/GaN films with high structural quality, CIP tests did not degrade the sensor surface and pH sensitivities of 55-58 mV/pH were achieved. Several different passivation schemes based on SiO(x), SiN(x), AlN, and nanocrystalline diamond were compared with special attention given to compatibility to standard microelectronic device technologies as well as biocompatibility of the passivation films. The CIP stability was evaluated with a main focus on the morphological stability. All stacks containing a SiO₂ or an AlN layer were etched by the NaOH solution in the CIP process. Reliable passivations withstanding the NaOH solution were provided by stacks of ICP-CVD grown and sputtered SiN(x) as well as diamond reinforced passivations. Drift levels about 0.001 pH/h and stable sensitivity over several CIP cycles were achieved for optimized sensor structures. Copyright © 2012 Elsevier B.V. All rights reserved.

Optical technologies for TSV inspection

NASA Astrophysics Data System (ADS)

Aiyer, Arun A.; Maltsev, Nikolai; Ryu, Jae

2014-04-01

In this paper, Frontier Semiconductor will introduce a new technology that is referred to as Virtual Interface Technology (VIT™). VIT™ is a Fourier domain technique that utilizes temporal phase shear of the measurement beam. The unique configuration of the sensor enables measurement of wafer and bonded stack thicknesses ranging from a few microns to millimeters with measurement repeatability ~ nm and resolution of approximately 0.1% of nominal thickness or depth. We will present data on high aspect ratio via measurements (depth, top critical dimension, bottom critical dimension, via bottom profile and side wall angle), bonded wafer stack thickness, and Cu bump measurements. A complimentary tool developed at FSM is a high resolution μRaman spectrometer to measure stress-change in Si lattice induced by Through Silicon Via (TSV) processes. These measurements are important to determine Keep-Out-Zone in the areas where devices are built so that the engineered gate strain is not altered by TSV processing induced strain. Applications include via post-etch; via post fill, and bottom Cu nail stress measurements. The capabilities of and measurement results from both tools are discussed below.

The MACRO detector at Gran Sasso

NASA Astrophysics Data System (ADS)

Ambrosio, M.; Antolini, R.; Assiro, R.; Auriemma, G.; Bakari, D.; Baldini, A.; Barbarino, G. C.; Barbarito, E.; Barish, B. C.; Battistoni, G.; Becherini, Y.; Bellotti, R.; Bemporad, C.; Bernardini, P.; Bilokon, H.; Bisi, V.; Bloise, C.; Bottazzi, E.; Bower, C.; Brigida, M.; Bussino, S.; Cafagna, F.; Calicchio, M.; Campana, D.; Candela, A.; Carboni, M.; Cecchini, S.; Cei, F.; Ceres, A.; Chiarella, V.; Choudhary, B. C.; Coutu, S.; Cozzi, M.; Creti, P.; de Cataldo, G.; Esposti, L. Degli; Dekhissi, H.; de Marzo, C.; de Mitri, I.; Derkaoui, J.; de Vincenzi, M.; di Credico, A.; di Ferdinando, D.; Diotallevi, R.; Erriquez, O.; Favuzzi, C.; Forti, C.; Fusco, P.; Gebhard, M.; Giacomelli, G.; Giacomelli, R.; Giannini, G.; Giglietto, N.; Giorgini, M.; Giuliani, R.; Goretti, M.; Grassi, M.; Grau, H.; Gray, L.; Grillo, A.; Guarino, F.; Gustavino, C.; Habig, A.; Hanson, J.; Hanson, K.; Hawthorne, A.; Heinz, R.; Hong, J. T.; Iarocci, E.; Katsavounidis, E.; Katsavounidis, I.; Kearns, E.; Kim, H.; Kyriazopoulou, S.; Lamanna, E.; Lane, C.; Leone, A.; Levin, D. S.; Lipari, P.; Liu, G.; Liu, R.; Longley, N. P.; Longo, M. J.; Loparco, F.; Maaroufi, F.; Mancarella, G.; Mandrioli, G.; Manzoor, S.; Marrelli, V.; Margiotta, A.; Marini, A.; Martello, D.; Marzari-Chiesa, A.; Mazziotta, M. N.; Michael, D. G.; Mikheyev, S.; Miller, L.; Monacelli, P.; Mongelli, M.; Montaruli, T.; Monteno, M.; Mossbarger, L.; Mufson, S.; Musser, J.; Nicolò, D.; Nolty, R.; Okada, C.; Orsini, M.; Orth, C.; Osteria, G.; Ouchrif, M.; Palamara, O.; Parlati, S.; Patera, V.; Patrizii, L.; Pazzi, R.; Peck, C. W.; Pellizzoni, G.; Perchiazzi, M.; Perrone, L.; Petrakis, J.; Petrera, S.; Pignatano, N.; Pinto, C.; Pistilli, P.; Popa, V.; Rainò, A.; Reynoldson, J.; Ronga, F.; Rrhioua, A.; Sacchetti, A.; Saggese, P.; Satriano, C.; Satta, L.; Scapparone, E.; Scholberg, K.; Sciubba, A.; Serra, P.; Sioli, M.; Sirri, G.; Sitta, M.; Sondergaard, S.; Spinelli, P.; Spinetti, M.; Spurio, M.; Stalio, S.; Steinberg, R.; Stone, J. L.; Sulak, L. R.; Surdo, A.; Tarlè, G.; Togo, V.; Vakili, M.; Valieri, C.; Walter, C. W.; Webb, R.; Zaccheo, N.; MACRO Collaboration

2002-07-01

MACRO was an experiment that ran in the Laboratori Nazionali del Gran Sasso from 1988 to 2000. Its principal goal was to observe magnetic monopoles or set significantly lower experimental flux limits than had been previously available in the velocity range from about β=10 -4 to unity. In addition it made a variety of other observations. Examples are: setting flux limits on other so far unobserved particles such as nuclearites and lightly ionizing particles, searching for WIMP annihilations in the Earth and the Sun and for neutrino bursts from stellar collapses in or near our Galaxy, and making measurements relevant to high energy muon and neutrino astronomy and of the flux of up-going muons as a function of nadir angle showing evidence for neutrino oscillations. The apparatus consisted of three principal types of detectors: liquid scintillator counters, limited streamer tubes, and nuclear track etch detectors. In addition, over part of its area it contained a transition radiation detector. The general design philosophy emphasized redundancy and complementarity. This paper describes the technical aspects of the complete MACRO detector, its operational performance, and the techniques used to calibrate it and verify its proper operation. It supplements a previously published paper which described the first portion of the detector that was built and operated.

The MACRO detector at Gran Sasso

NASA Astrophysics Data System (ADS)

MACRO Collaboration; Ambrosio, M.; Antolini, R.; Assiro, R.; Auriemma, G.; Bakari, D.; Baldini, A.; Barbarino, G. C.; Barbarito, E.; Barish, B. C.; Battistoni, G.; Becherini, Y.; Bellotti, R.; Bemporad, C.; Bernardini, P.; Bilokon, H.; Bisi, V.; Bloise, C.; Bottazzi, E.; Bower, C.; Brigida, M.; Bussino, S.; Cafagna, F.; Calicchio, M.; Campana, D.; Candela, A.; Carboni, M.; Cecchini, S.; Cei, F.; Ceres, A.; Chiarella, V.; Choudhary, B. C.; Coutu, S.; Cozzi, M.; Creti, P.; de Cataldo, G.; degli Esposti, L.; Dekhissi, H.; de Marzo, C.; de Mitri, I.; Derkaoui, J.; de Vincenzi, M.; di Credico, A.; di Ferdinando, D.; Diotallevi, R.; Erriquez, O.; Favuzzi, C.; Forti, C.; Fusco, P.; Gebhard, M.; Giacomelli, G.; Giacomelli, R.; Giannini, G.; Giglietto, N.; Giorgini, M.; Giuliani, R.; Goretti, M.; Grassi, M.; Grau, H.; Gray, L.; Grillo, A.; Guarino, F.; Gustavino, C.; Habig, A.; Hanson, J.; Hanson, K.; Hawthorne, A.; Heinz, R.; Hong, J. T.; Iarocci, E.; Katsavounidis, E.; Katsavounidis, I.; Kearns, E.; Kim, H.; Kyriazopoulou, S.; Lamanna, E.; Lane, C.; Leone, A.; Levin, D. S.; Lipari, P.; Liu, G.; Liu, R.; Longley, N. P.; Longo, M. J.; Loparco, F.; Maaroufi, F.; Mancarella, G.; Mandrioli, G.; Manzoor, S.; Marrelli, V.; Margiotta, A.; Marini, A.; Martello, D.; Marzari-Chiesa, A.; Mazziotta, M. N.; Michael, D. G.; Mikheyev, S.; Miller, L.; Monacelli, P.; Mongelli, M.; Montaruli, T.; Monteno, M.; Mossbarger, L.; Mufson, S.; Musser, J.; Nicolò, D.; Nolty, R.; Okada, C.; Orsini, M.; Orth, C.; Osteria, G.; Ouchrif, M.; Palamara, O.; Parlati, S.; Patera, V.; Patrizii, L.; Pazzi, R.; Peck, C. W.; Pellizzoni, G.; Perchiazzi, M.; Perrone, L.; Petrakis, J.; Petrera, S.; Pignatano, N.; Pinto, C.; Pistilli, P.; Popa, V.; Rainò, A.; Reynoldson, J.; Ronga, F.; Rrhioua, A.; Sacchetti, A.; Saggese, P.; Satriano, C.; Satta, L.; Scapparone, E.; Scholberg, K.; Sciubba, A.; Serra, P.; Sioli, M.; Sirri, G.; Sitta, M.; Sondergaard, S.; Spinelli, P.; Spinetti, M.; Spurio, M.; Stalio, S.; Steinberg, R.; Stone, J. L.; Sulak, L. R.; Surdo, A.; Tarlè, G.; Togo, V.; Vakili, M.; Valieri, C.; Walter, C. W.; Webb, R.; Zaccheo, N.

2002-07-01

MACRO was an experiment that ran in the Laboratori Nazionali del Gran Sasso from 1988 to 2000. Its principal goal was to observe magnetic monopoles or set significantly lower experimental flux limits than had been previously available in the velocity range from about β=10-4 to unity. In addition it made a variety of other observations. Examples are: setting flux limits on other so far unobserved particles such as nuclearites and lightly ionizing particles, searching for WIMP annihilations in the Earth and the Sun and for neutrino bursts from stellar collapses in or near our Galaxy, and making measurements relevant to high energy muon and neutrino astronomy and of the flux of up-going muons as a function of nadir angle showing evidence for neutrino oscillations. The apparatus consisted of three principal types of detectors: liquid scintillator counters, limited streamer tubes, and nuclear track etch detectors. In addition, over part of its area it contained a transition radiation detector. The general design philosophy emphasized redundancy and complementarity. This paper describes the technical aspects of the complete MACRO detector, its operational performance, and the techniques used to calibrate it and verify its proper operation. It supplements a previously published paper which described the first portion of the detector that was built and operated.

Experimental set up for the irradiation of biological samples and nuclear track detectors with UV C

PubMed Central

Portu, Agustina Mariana; Rossini, Andrés Eugenio; Gadan, Mario Alberto; Bernaola, Omar Alberto; Thorp, Silvia Inés; Curotto, Paula; Pozzi, Emiliano César Cayetano; Cabrini, Rómulo Luis; Martin, Gisela Saint

2016-01-01

Aim In this work we present a methodology to produce an “imprint” of cells cultivated on a polycarbonate detector by exposure of the detector to UV C radiation. Background The distribution and concentration of 10B atoms in tissue samples coming from BNCT (Boron Neutron Capture Therapy) protocols can be determined through the quantification and analysis of the tracks forming its autoradiography image on a nuclear track detector. The location of boron atoms in the cell structure could be known more accurately by the simultaneous observation of the nuclear tracks and the sample image on the detector. Materials and Methods A UV C irradiator was constructed. The irradiance was measured along the lamp direction and at different distances. Melanoma cells were cultured on polycarbonate foils, incubated with borophenylalanine, irradiated with thermal neutrons and exposed to UV C radiation. The samples were chemically attacked with a KOH solution. Results A uniform irradiation field was established to expose the detector foils to UV C light. Cells could be seeded on the polycarbonate surface. Both imprints from cells and nuclear tracks were obtained after chemical etching. Conclusions It is possible to yield cellular imprints in polycarbonate. The nuclear tracks were mostly present inside the cells, indicating a preferential boron uptake. PMID:26933396

Germanium detector passivated with hydrogenated amorphous germanium

DOEpatents

Hansen, William L.; Haller, Eugene E.

1986-01-01

Passivation of predominantly crystalline semiconductor devices (12) is provided for by a surface coating (21) of sputtered hydrogenated amorphous semiconductor material. Passivation of a radiation detector germanium diode, for example, is realized by sputtering a coating (21) of amorphous germanium onto the etched and quenched diode surface (11) in a low pressure atmosphere of hydrogen and argon. Unlike prior germanium diode semiconductor devices (12), which must be maintained in vacuum at cryogenic temperatures to avoid deterioration, a diode processed in the described manner may be stored in air at room temperature or otherwise exposed to a variety of environmental conditions. The coating (21) compensates for pre-existing undesirable surface states as well as protecting the semiconductor device (12) against future impregnation with impurities.

Spectrometry of linear energy transfer and dosimetry measurements onboard spacecrafts and aircrafts

NASA Astrophysics Data System (ADS)

Spurný, F.; Ploc, O.; Jadrníčková, I.

2009-01-01

There are only a few methods of dosimetry which can estimate the contribution of different particles to onboard spacecraft and/or aircraft exposure. This contribution describes an attempt to estimate the contribution of different components to the exposure level using MDU-Liulin energy deposition spectrometer and thermoluminescent detectors (TLD’s), in combination with a spectrometer of linear energy transfer (LET) based on track etch detectors. This equipment was exposed onboard: the International Space Station for a long period and two shorter shuttle missions and a commercial subsonic aircraft for several long-term monitoring periods from 2001 to 2006. The data obtained are analyzed from several points of view and the obtained results are presented, analyzed, and discussed.

Normal-incidence quantum cascade detector coupled by nanopore structure

NASA Astrophysics Data System (ADS)

Liu, Jianqi; Wang, Fengjiao; Zhai, Shenqiang; Zhang, Jinchuan; Liu, Shuman; Liu, Junqi; Wang, Lijun; Liu, Fengqi; Wang, Zhanguo

2018-04-01

A normal-incidence quantum cascade detector coupled by a nanopore array structure (NPS) is demonstrated. The NPS is fabricated on top of an In0.53Ga0.47As contact layer by inductively coupled plasma etching using anodic aluminum oxide as a mask. Because of the nonuniform volume fraction at different areas of the device mesa, the NPS acts as subwavelength random gratings. Normal-incidence light can be scattered into random oblique directions for inter-sub-band transition absorption. With normal incidence, the responsivities of the device reach 24 mA/W at 77 K and 15.7 mA/W at 300 K, which are enhanced 2.23 and 1.96 times, respectively, compared with that of the 45°-edge device.

An automatic analyzer of solid state nuclear track detectors using an optic RAM as image sensor

NASA Astrophysics Data System (ADS)

Staderini, Enrico Maria; Castellano, Alfredo

1986-02-01

An optic RAM is a conventional digital random access read/write dynamic memory device featuring a quartz windowed package and memory cells regularly ordered on the chip. Such a device is used as an image sensor because each cell retains data stored in it for a time depending on the intensity of the light incident on the cell itself. The authors have developed a system which uses an optic RAM to acquire and digitize images from electrochemically etched CR39 solid state nuclear track detectors (SSNTD) in the track count rate up to 5000 cm -2. On the digital image so obtained, a microprocessor, with appropriate software, performs image analysis, filtering, tracks counting and evaluation.

Design of a Voltage Tunable Broadband Quantum Well Infrared Photodetector

DTIC Science & Technology

2002-06-01

1 B. PROGRESS OF QWIPS ...converting some of the incident photons to an electric signal. A Quantum Well Infrared Photodetector ( QWIP ) consists of a stack of quantum wells...arsenide (GaAs ) and aluminum gallium arsenide ( AsGaAl xx −1 ) with different aluminum compositions allowed the fabrication of novel QWIP detectors

A Cerenkov-delta E-Cerenkov detector for high energy cosmic ray isotopes and an accelerator study of Ar-40 and Fe-56 fragmentation. Ph.D. Thesis

NASA Technical Reports Server (NTRS)

Lau, K. H.

1985-01-01

A high energy cosmic ray detector--the High Energy Isotope Spectrometer Telescope (HEIST) is described. It is a large area (0.25 m(swp 2) SR) balloon borne isotope spectrometer designed to make high resolution measurements of isotopes in the element range from neon to nickel (10 Z 28) at energies of about 2 GeV/nucleon. HEIST determines the mass of individual nuclei by measuring both the change in the Lorentz factor (delta gamma) that results from traversing the NaI stack, and the energy loss (delta E) in the stack. Since the total energy of an isotope is given by E = (gamma M), the mass M can be determined by M = delta E/delta, gamma. The instrument is designed to achieve a typical mass resolution of 0.2 amu. The isotopic composition of the fragments from the breakup of high energy An-40 and Fe-56 nuclei are measured experimentally. Isotope yields are compared with calculated yields based on semi-empirical cross-section formulae.

Picosecond timing resolution detection of ggr-photons utilizing microchannel-plate detectors: experimental tests of quantum nonlocality and photon localization

NASA Astrophysics Data System (ADS)

Irby, Victor D.

2004-09-01

The concept and subsequent experimental verification of the proportionality between pulse amplitude and detector transit time for microchannel-plate detectors is presented. This discovery has led to considerable improvement in the overall timing resolution for detection of high-energy ggr-photons. Utilizing a 22Na positron source, a full width half maximum (FWHM) timing resolution of 138 ps has been achieved. This FWHM includes detector transit-time spread for both chevron-stack-type detectors, timing spread due to uncertainties in annihilation location, all electronic uncertainty and any remaining quantum mechanical uncertainty. The first measurement of the minimum quantum uncertainty in the time interval between detection of the two annihilation photons is reported. The experimental results give strong evidence against instantaneous spatial localization of ggr-photons due to measurement-induced nonlocal quantum wavefunction collapse. The experimental results are also the first that imply momentum is conserved only after the quantum uncertainty in time has elapsed (Yukawa H 1935 Proc. Phys. Math. Soc. Japan 17 48).

Optical fiber sensor for low dose gamma irradiation monitoring

NASA Astrophysics Data System (ADS)

de Andrés, Ana I.; Esteban, Ã.`scar; Embid, Miguel

2016-05-01

An optical fiber gamma ray detector is presented in this work. It is based on a Terbium doped Gadolinium Oxysulfide (Gd2O2S:Tb) scintillating powder which cover a chemically etched polymer fiber tip. This etching improves the fluorescence gathering by the optical fiber. The final diameter has been selected to fulfill the trade-off between light gathering and mechanical strength. Powder has been encapsulated inside a microtube where the fiber tip is immersed. The sensor has been irradiated with different air Kerma doses up to 2 Gy/h with a 137Cs source, and the spectral distribution of the fluorescence intensity has been recorded in a commercial grade CCD spectrometer. The obtained signal-to-noise ratio is good enough even for low doses, which has allowed to reduce the integration time in the spectrometer. The presented results show the feasibility for using low cost equipment to detect/measure ionizing radiation as gamma rays are.

Development of TlBr detectors for PET imaging.

PubMed

Ariño-Estrada, Gerard; Du, Junwei; Kim, Hadong; Cirignano, Leonard J; Shah, Kanai S; Cherry, Simon R; Mitchell, Gregory S

2018-05-04

Thallium bromide (TlBr) is a promising semiconductor detector material for positron emission tomography (PET) because it can offer very good energy resolution and 3-D segmentation capabilities, and it also provides detection efficiency surpassing that of commonly used scintillators. Energy, timing, and spatial resolution were measured for thin (<1 mm) TlBr detectors. The energy and timing resolution were measured simultaneously for the same planar 0.87 mm-thick TlBr device. An energy resolution of (6.41.3)% at 511 keV was achieved at -400 V bias voltage and at room temperature. A timing resolution of (27.84.1) ns FWHM was achieved for the same operating conditions when appropriate energy gating was applied. The intrinsic spatial resolution was measured to be 0.9 mm FWHM for a TlBr detector with metallic strip contacts of 0.5 mm pitch. As material properties improve, higher bias voltage should improve timing performance. A stack of thin detectors with finely segmented readout can create a modular detector with excellent energy and spatial resolution for PET applications. . © 2018 Institute of Physics and Engineering in Medicine.

The fragmentation of 510 MeV/nucleon iron-56 in polyethylene. I. Fragment fluence spectra

NASA Technical Reports Server (NTRS)

Zeitlin, C.; Miller, J.; Heilbronn, L.; Frankel, K.; Gong, W.; Schimmerling, W.

1996-01-01

The fragmentation of 510 MeV/nucleon iron ions in several thicknesses of polyethylene has been measured. Non-interacting primary beam particles and fragments have been identified and their LETs calculated by measuring ionization energy loss in a stack of silicon detectors. Fluences, normalized to the incident beam intensity and corrected for detector effects, are presented for each fragment charge and target. Histograms of fluence as a function of LET are also presented. Some implications of these data for measurements of the biological effects of heavy ions are discussed.

Development of a lithium fluoride zinc sulfide based neutron multiplicity counter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cowles, Christian; Behling, Spencer; Baldez, Phoenix

Past 3He shortages led to investigations into replacement options for neutron detectors in systems that previously used 3He-based technologies. The goal of this research was to investigate the feasibility of a full-scale lithium fluoride with silver activated zinc sulfide (LiF/ZnS) based neutron multiplicity counter. The LiF/ZnS based neutron multiplicity counter (LiNMC) was developed based on an iterative process between modeling and experimental measurements. Each active region of the LiNMC contains five sheets of LiF/ZnS sandwiched between six sheets of wavelength shifting plastic to form neutron detection stacks. The wavelength shifted scintillation light was collected by photomultiplier tubes located on eachmore » end of the stacks. Twelve such detector stacks were placed around a sample chamber in a square arrangement with lithiated high density polyethylene blocks in the corners to reflect high energy neutrons and capture low energy neutrons. Preliminary calibration with a 252Cf neutron source showed that the LiNMC was able to achieve 36% neutron detection efficiency (ε) and an 11.7 μs neutron die-away time (τ) for a doubles Figure-of-merit (ε2/ τ) of 109. This is the highest doubles Figure-of-merit performance measured to-date for a 3He-free neutron multiplicity counter system. By the end of this project, the LiNMC’s basic components were integrated into a single laboratory scale system capable of proof-of-concept measurements.« less

Micromachined Joule-Thomson coolers for cooling low-temperature detectors and electronics

NASA Astrophysics Data System (ADS)

ter Brake, Marcel; Lerou, P. P. P. M.; Burger, J. F.; Holland, H. J.; Derking, J. H.; Rogalla, H.

2017-11-01

The performance of electronic devices can often be improved by lowering the operating temperature resulting in lower noise and larger speed. Also, new phenomena can be applied at low temperatures, as for instance superconductivity. In order to fully exploit lowtemperature electronic devices, the cryogenic system (cooler plus interface) should be `invisible' to the user. It should be small, low-cost, low-interference, and above all very reliable (long-life). The realization of cryogenic systems fulfilling these requirements is the topic of research of the Cooling and Instrumentation group at the University of Twente. A MEMS-based cold stage was designed and prototypes were realized and tested. The cooler operates on basis of the Joule-Thomson effect. Here, a high-pressure gas expands adiabatically over a flow restriction and thus cools and liquefies. Heat from the environment (e.g., an optical detector) can be absorbed in the evaporation of the liquid. The evaporated working fluid returns to the low-pressure side of the system via a counter-flow heat exchanger. In passing this heat exchanger, it takes up heat from the incoming high-pressure gas that thus is precooled on its way to the restriction. The cold stage consists of a stack of three glass wafers. In the top wafer, a high-pressure channel is etched that ends in a flow restriction with a height of typically 300 nm. An evaporator volume crosses the center wafer into the bottom wafer. This bottom wafer contains the lowpressure channel thus forming a counter-flow heat exchanger. A design aiming at a net cooling power of 10 mW at 96 K and operating with nitrogen as the working fluid was optimized based on the minimization of entropy production. The optimum cold finger measures 28 mm x 2.2 mm x 0.8 mm operating with a nitrogen flow of 1 mg/s at a high pressure of 80 bar and a low pressure of 6 bar. The design and fabrication of the coolers will be discussed along with experimental results.

Image stacking approach to increase sensitivity of fluorescence detection using a low cost complementary metal-oxide-semiconductor (CMOS) webcam.

PubMed

Balsam, Joshua; Bruck, Hugh Alan; Kostov, Yordan; Rasooly, Avraham

2012-01-01

Optical technologies are important for biological analysis. Current biomedical optical analyses rely on high-cost, high-sensitivity optical detectors such as photomultipliers, avalanched photodiodes or cooled CCD cameras. In contrast, Webcams, mobile phones and other popular consumer electronics use lower-sensitivity, lower-cost optical components such as photodiodes or CMOS sensors. In order for consumer electronics devices, such as webcams, to be useful for biomedical analysis, they must have increased sensitivity. We combined two strategies to increase the sensitivity of CMOS-based fluorescence detector. We captured hundreds of low sensitivity images using a Webcam in video mode, instead of a single image typically used in cooled CCD devices.We then used a computational approach consisting of an image stacking algorithm to remove the noise by combining all of the images into a single image. While video mode is widely used for dynamic scene imaging (e.g. movies or time-lapse photography), it is not used to capture a single static image, which removes noise and increases sensitivity by more than thirty fold. The portable, battery-operated Webcam-based fluorometer system developed here consists of five modules: (1) a low cost CMOS Webcam to monitor light emission, (2) a plate to perform assays, (3) filters and multi-wavelength LED illuminator for fluorophore excitation, (4) a portable computer to acquire and analyze images, and (5) image stacking software for image enhancement. The samples consisted of various concentrations of fluorescein, ranging from 30 μM to 1000 μM, in a 36-well miniature plate. In the single frame mode, the fluorometer's limit-of-detection (LOD) for fluorescein is ∼1000 μM, which is relatively insensitive. However, when used in video mode combined with image stacking enhancement, the LOD is dramatically reduced to 30 μM, sensitivity which is similar to that of state-of-the-art ELISA plate photomultiplier-based readers. Numerous medical diagnostics assays rely on optical and fluorescence readers. Our novel combination of detection technologies, which is new to biodetection may enable the development of new low cost optical detectors based on an inexpensive Webcam (<$10). It has the potential to form the basis for high sensitivity, low cost medical diagnostics in resource-poor settings.

Image stacking approach to increase sensitivity of fluorescence detection using a low cost complementary metal-oxide-semiconductor (CMOS) webcam

PubMed Central

Balsam, Joshua; Bruck, Hugh Alan; Kostov, Yordan; Rasooly, Avraham

2013-01-01

Optical technologies are important for biological analysis. Current biomedical optical analyses rely on high-cost, high-sensitivity optical detectors such as photomultipliers, avalanched photodiodes or cooled CCD cameras. In contrast, Webcams, mobile phones and other popular consumer electronics use lower-sensitivity, lower-cost optical components such as photodiodes or CMOS sensors. In order for consumer electronics devices, such as webcams, to be useful for biomedical analysis, they must have increased sensitivity. We combined two strategies to increase the sensitivity of CMOS-based fluorescence detector. We captured hundreds of low sensitivity images using a Webcam in video mode, instead of a single image typically used in cooled CCD devices.We then used a computational approach consisting of an image stacking algorithm to remove the noise by combining all of the images into a single image. While video mode is widely used for dynamic scene imaging (e.g. movies or time-lapse photography), it is not used to capture a single static image, which removes noise and increases sensitivity by more than thirty fold. The portable, battery-operated Webcam-based fluorometer system developed here consists of five modules: (1) a low cost CMOS Webcam to monitor light emission, (2) a plate to perform assays, (3) filters and multi-wavelength LED illuminator for fluorophore excitation, (4) a portable computer to acquire and analyze images, and (5) image stacking software for image enhancement. The samples consisted of various concentrations of fluorescein, ranging from 30 μM to 1000 μM, in a 36-well miniature plate. In the single frame mode, the fluorometer's limit-of-detection (LOD) for fluorescein is ∼1000 μM, which is relatively insensitive. However, when used in video mode combined with image stacking enhancement, the LOD is dramatically reduced to 30 μM, sensitivity which is similar to that of state-of-the-art ELISA plate photomultiplier-based readers. Numerous medical diagnostics assays rely on optical and fluorescence readers. Our novel combination of detection technologies, which is new to biodetection may enable the development of new low cost optical detectors based on an inexpensive Webcam (<$10). It has the potential to form the basis for high sensitivity, low cost medical diagnostics in resource-poor settings. PMID:23990697

Characterization of perovskite layer on various nanostructured silicon wafer

NASA Astrophysics Data System (ADS)

Rostan, Nur Fairuz Mohd; Sepeai, Suhaila; Ramli, Noor Fadhilah; Azhari, Ayu Wazira; Ludin, Norasikin Ahmad; Teridi, Mohd Asri Mat; Ibrahim, Mohd Adib; Zaidi, Saleem H.

2017-05-01

Crystalline silicon (c-Si) solar cell dominates 90% of photovoltaic (PV) market. The c-Si is the most mature of all PV technologies and expected to remain leading the PV technology by 2050. The attractive characters of Si solar cell are stability, long lasting and higher lifetime. Presently, the efficiency of c-Si solar cell is still stuck at 25% for one and half decades. Tandem approach is one of the attempts to improve the Si solar cell efficiency with higher bandgap layer is stacked on top of Si bottom cell. Perovskite offers a big potential to be inserted into a tandem solar cell. Perovskite with bandgap of 1.6 to 1.9 eV will be able to absorb high energy photons, meanwhile c-Si with bandgap of 1.124 eV will absorb low energy photons. The high carrier mobility, high carrier lifetime, highly compatible with both solution and evaporation techniques makes perovskite an eligible candidate for perovskite-Si tandem configuration. The solution of methyl ammonium lead iodide (MAPbI3) was prepared by single step precursor process. The perovskite layer was deposited on different c-Si surface structure, namely planar, textured and Si nanowires (SiNWs) by using spin-coating technique at different rotation speeds. The nanostructure of Si surface was textured using alkaline based wet chemical etching process and SiNW was grown using metal assisted etching technique. The detailed surface morphology and absorbance of perovskite were studied in this paper. The results show that the thicknesses of MAPbI3 were reduced with the increasing of rotation speed. In addition, the perovskite layer deposited on the nanostructured Si wafer became rougher as the etching time and rotation speed increased. The average surface roughness increased from ˜24 nm to ˜38 nm for etching time range between 5-60 min at constant low rotation speed (2000 rpm) for SiNWs Si wafer.

Grafted Polystyrene Monolayer Brush as Both Negative and Positive Tone Electron Beam Resist.

PubMed

Aydinoglu, Ferhat; Yamada, Hirotaka; Dey, Ripon K; Cui, Bo

2017-05-23

Although spin coating is the most widely used electron-beam resist coating technique in nanolithography, it cannot typically be applied for nonflat or irregular surfaces. Here, we demonstrate that monolayer polystyrene brush can be grafted on substrates and used as both positive and negative electron-beam resist, which can be applied for such unconventional surfaces. Polystyrene is a popular negative resist when using solvent developer but solvent cannot be used for grafted polystyrene brush that is firmly bonded to the substrate. Instead, we employed two unconventional development methods to lead polystyrene brush to positive or negative tone behavior. Negative tone was achieved by thermal development at 300 °C because exposed thus cross-linked polystyrene brush is more thermally stable against vaporization than unexposed linear one. Surprisingly, positive tone behavior occurred when the brush was grafted onto an aluminum (Al) layer and the film stack was developed using diluted hydrofluoric acid (HF) that etched the underlying Al layer. By transferring the patterns into the silicon (Si) substrates using the thin Al layer as a sacrificial hard mask for dry etch, well-defined structures in Si were obtained in two different electron-beam resist tones as well as in nonflat surfaces.

The development of an SC1 removable si-anti-reflective-coating

NASA Astrophysics Data System (ADS)

Yamada, Shintaro; Ke, Iou-Sheng; Cutler, Charlotte; Cui, Li; LaBeaume, Paul; Greene, Daniel; Popere, Bhooshan; Sullivan, Chris; Leonard, JoAnne; Coley, Suzanne; Wong, Sabrina; Ongayi, Owendi; Cameron, Jim; Clark, Michael B.; Fitzgibbons, Thomas C.

2018-03-01

A trilayer stack of spin-on-carbon (SOC), silicon anti-reflective coating (SiARC) and photoresist (PR) is often used to enable high resolution implant layers for integrated circuit manufacturing. Damage to substrates from SiARC removal using dry etching or aqueous hydrogen fluoride has increased the demand for innovative SiARC materials for implant lithography process. Wet strippable SiARCs (WS-SiARCs) capable of stripping under mild conditions such as SC1 (ammonium hydroxide/hydrogen peroxide/water) while maintaining key performance metrics of standard SiARCs is highly desirable. Minimizing the formation of Si-O-Si linkages by introducing organic crosslink sites was effective to impart SC1 solubility particularly after O2 dry etching. Incorporation of acidic groups onto the crosslinking site further improved SC1 solubility. A new siloxane polymer architecture that has SC1 active functionality in the polymer backbone was developed to further enhance SC1 solubility. A new SiARC formulation based on the new siloxane polymer achieved equivalent lithographic performances to a classic SiARC and SC1 strip rate >240Å/min under a relatively low concentration SC1 condition such as ammonium hydroxide/hydrogen peroxide/water=1/1/40.

Optimization of the buffer surface of CoFeB/MgO/CoFeB-based magnetic tunnel junctions by ion beam milling

NASA Astrophysics Data System (ADS)

Martins, L.; Ventura, J.; Ferreira, R.; Freitas, P. P.

2017-12-01

Due to their high tunnel magnetoresistance (TMR) ratios at room temperature, magnetic tunnel junctions (MTJs) with a crystalline MgO insulating barrier and CoFeB ferromagnetic (FM) layers are the best candidates for novel magnetic memory applications. To overcome impedance matching problems in electronic circuits, the MgO barrier must have an ultra-low thickness (∼1 nm). Therefore, it is mandatory to optimize the MTJ fabrication process, in order to prevent relevant defects in the MgO barrier that could affect the magnetic and electrical MTJ properties. Here, a smoothing process aiming to decrease the roughness of the buffer surface before the deposition of the full MTJ stack is proposed. An ion beam milling process was used to etch the surface of an MTJ buffer structure with a Ru top layer. The morphologic results prove an effective decrease of the Ru surface roughness with the etching time. The electrical and magnetic results obtained for MTJs with smoothed buffer structures show a direct influence of the buffer roughness and coupling field on the improvement of the TMR ratio.

High Productivity DRIE solutions for 3D-SiP and MEMS Volume Manufacturing

NASA Astrophysics Data System (ADS)

Puech, M.; Thevenoud, JM; Launay, N.; Arnal, N.; Godinat, P.; Andrieu, B.; Gruffat, JM

2006-04-01

Emerging 3D-SiP technologies and high volume MEMS applications require high productivity mass production DRIE systems. The Alcatel DRIE product range has recently been optimised to reach the highest process and hardware production performances. A study based on sub-micron high aspect ratio structures encountered in the most stringent 3D-SiP has been carried out. The optimization of the Bosch process parameters has resulted in ultra high silicon etch rates, with unrivalled uniformity and repeatability leading to excellent process. In parallel, most recent hardware and proprietary design optimization including vacuum pumping lines, process chamber, wafer chucks, pressure control system, gas delivery are discussed. These improvements have been monitored in a mass production environment for a mobile phone application. Field data analysis shows a significant reduction of cost of ownership thanks to increased throughput and much lower running costs. These benefits are now available for all 3D-SiP and high volume MEMS applications. The typical etched patterns include tapered trenches for CMOS imagers, through silicon via holes for die stacking, well controlled profile angle for 3D high precision inertial sensors, and large exposed area features for inkjet printer heads and Silicon microphones.

Characterization of 3C-SiC Films Grown on 4H- and 6H-SiC Substrate Mesas During Step-Free Surface Heteroepitaxy

NASA Technical Reports Server (NTRS)

Neudeck, Philip G.; Powel J. Anthony; Spry, David J.; Trunek, Andrew J.; Huang, Xianrong; Vetter, William M.; Dudley, Michael; Skowronski, Marek; Liu, Jinqiang

2002-01-01

This paper reports detailed structural characterization of 3C-SiC heteroepitaxial films grown on 4H- and 6H-SiC mesa surfaces. 3C-SiC heterofilms grown by the "step-free surface heteroepitaxy" process, free of double-positioning boundary (DPB) and stacking-fault (SF) defects, were compared to less-optimized 3C-SiC heterofilms using High Resolution X-ray Diffraction (HRXRD), High Resolution Cross-sectional Transmission Electron Microscopy (HRXTEM), molten potassium hydroxide (KOH) etching, and dry thermal oxidation. The results suggest that step free surface heteroepitaxy enables remarkably benign partial lattice mismatch strain relief during heterofilm growth.

Effect of hexagonal hillock on luminescence characteristic of multiple quantum wells structure

NASA Astrophysics Data System (ADS)

Du, Jinjuan; Xu, Shengrui; Li, Peixian; Zhang, Jincheng; Zhao, Ying; Peng, Ruoshi; Fan, Xiaomeng; Hao, Yue

2018-04-01

GaN based ultraviolet multiple quantum well structures grown on a c-plane sapphire substrate by metal organic chemical deposition showed a microstructure with a large amount of huge hexagonal hillocks. The polarity of the sample is confirmed by etching with sodium hydroxide solution. The luminous intensity distribution of a typical hexagonal hillock was investigated by the phototluminescent mapping and the luminous intensity at hillock top regions was found to be 15 times higher than that of the regions around hillocks. The reduction of dislocations, the decreasing of the quantum confirmed stack effect caused by semipolar plane and the inclination of the sidewalls of the hexagonal hillock were responsible for the enhancement of luminous intensity.

Removal of GaAs growth substrates from II-VI semiconductor heterostructures

NASA Astrophysics Data System (ADS)

Bieker, S.; Hartmann, P. R.; Kießling, T.; Rüth, M.; Schumacher, C.; Gould, C.; Ossau, W.; Molenkamp, L. W.

2014-04-01

We report on a process that enables the removal of II-VI semiconductor epilayers from their GaAs growth substrate and their subsequent transfer to arbitrary host environments. The technique combines mechanical lapping and layer selective chemical wet etching and is generally applicable to any II-VI layer stack. We demonstrate the non-invasiveness of the method by transferring an all-II-VI magnetic resonant tunneling diode. High resolution x-ray diffraction proves that the crystal integrity of the heterostructure is preserved. Transport characterization confirms that the functionality of the device is maintained and even improved, which is ascribed to completely elastic strain relaxation of the tunnel barrier layer.

Fine tuning of the dichroic behavior of Bragg reflectors based on anisotropically nanostructured silicon

NASA Astrophysics Data System (ADS)

Diener, J.; Künzner, N.; Kovalev, D.; Gross, E.; Koch, F.; Fujii, M.

2003-05-01

Electro-chemical etching of heavily doped, (110) oriented, p+ (boron) doped silicon wafers results in porous silicon (PSi) layers which exhibit a strong in-plane anisotropy of the refractive index (birefringence). Single- and multiple layers of anisotropically nanostructured silicon (Si) have been fabricated and studied by polarization-resolved reflection and transmission measurements. Dielectric stacks of birefringent PSi acting as distributed Bragg reflectors have two distinct reflection bands depending on the polarization of the incident linearly polarized light. This effect is caused by a three-dimensional (in plane and in-depth) variation of the refraction index. The possibility of fine tuning the two orthogonally polarized reflection bands and their spectral splitting is demonstrated.

An edge-readout, multilayer detector for positron emission tomography.

PubMed

Li, Xin; Ruiz-Gonzalez, Maria; Furenlid, Lars R

2018-06-01

We present a novel gamma-ray-detector design based on total internal reflection (TIR) of scintillation photons within a crystal that addresses many limitations of traditional PET detectors. Our approach has appealing features, including submillimeter lateral resolution, DOI positioning from layer thickness, and excellent energy resolution. The design places light sensors on the edges of a stack of scintillator slabs separated by small air gaps and exploits the phenomenon that more than 80% of scintillation light emitted during a gamma-ray event reaches the edges of a thin crystal with polished faces due to TIR. Gamma-ray stopping power is achieved by stacking multiple layers, and DOI is determined by which layer the gamma ray interacts in. The concept of edge readouts of a thin slab was verified by Monte Carlo simulation of scintillation light transport. An LYSO crystal of dimensions 50.8 mm × 50.8 mm × 3.0 mm was modeled with five rectangular SiPMs placed along each edge face. The mean-detector-response functions (MDRFs) were calculated by simulating signals from 511 keV gamma-ray interactions in a grid of locations. Simulations were carried out to study the influence of choice of scintillator material and dimensions, gamma-ray photon energies, introduction of laser or mechanically induced optical barriers (LIOBs, MIOBs), and refractive indices of optical-coupling media and SiPM windows. We also analyzed timing performance including influence of gamma-ray interaction position and presence of optical barriers. We also modeled and built a prototype detector, a 27.4 mm × 27.4 mm × 3.0 mm CsI(Tl) crystal with 4 SiPMs per edge to experimentally validate the results predicted by the simulations. The prototype detector used CsI(Tl) crystals from Proteus outfitted with 16 Hamamatsu model S13360-6050PE MPPCs read out by an AiT-16-channel readout. The MDRFs were measured by scanning the detector with a collimated beam of 662-keV photons from a 137 Cs source. The spatial resolution was experimentally determined by imaging a tungsten slit that created a beam of 0.44 mm (FWHM) width normal to the detector surface. The energy resolution was evaluated by analyzing list-mode data from flood illumination by the 137 Cs source. We find that in a block-detector-sized LYSO layer read out by five SiPMs per edge, illuminated by 511-keV photons, the average resolution is 1.49 mm (FWHM). With the introduction of optical barriers, average spatial resolution improves to 0.56 mm (FWHM). The DOI resolution is the layer thickness of 3.0 mm. We also find that optical-coupling media and SiPM-window materials have an impact on spatial resolution. The timing simulation with LYSO crystal yields a coincidence resolving time (CRT) of 200-400 ps, which is slightly position dependent. And the introduction of optical barriers has minimum influence. The prototype CsI(Tl) detector, with a smaller area and fewer SiPMs, was measured to have central-area spatial resolutions of 0.70 and 0.39 mm without and with optical barriers, respectively. These results match well with our simulations. An energy resolution of 6.4% was achieved at 662 keV. A detector design based on a stack of monolithic scintillator layers that uses edge readouts offers several advantages over current block detectors for PET. For example, there is no tradeoff between spatial resolution and detection sensitivity since no reflector material displaces scintillator crystal, and submillimeter resolution can be achieved. DOI information is readily available, and excellent timing and energy resolutions are possible. © 2018 The Authors. Medical Physics published by Wiley Periodicals, Inc. on behalf of American Association of Physicists in Medicine.

Novel single-cell mega-size chambers for electrochemical etching of panorama position-sensitive polycarbonate ion image detectors

NASA Astrophysics Data System (ADS)

Sohrabi, Mehdi

2017-11-01

A novel development is made here by inventing panorama single-cell mega-size electrochemical etching (MS-ECE) chamber systems for processing panorama position-sensitive mega-size polycarbonate ion image detectors (MS-PCIDs) of potential for many neutron and ion detection applications in particular hydrogen ions or proton tracks and images detected for the first time in polycarbonates in this study. The MS-PCID is simply a large polycarbonate sheet of a desired size. The single-cell MS-ECE invented consists of two large equally sized transparent Plexiglas sheets as chamber walls holding a MS-PCID and the ECE chamber components tightly together. One wall has a large flat stainless steel electrode (dry cell) attached to it which is directly in contact with the MS-PCID and the other wall has a rod electrode with two holes to facilitate feeding and draining out the etching solution from the wet cell. A silicon rubber washer plays the role of the wet cell to hold the etchant and the electrical insulator to isolate the dry cell from the wet cell. A simple 50 Hz-HV home-made generator provides an adequate field strength through the two electrodes across the MS-ECE chamber. Two panorama single-cell MS-ECE chamber systems (circular and rectangular shapes) constructed were efficiently applied to processing the MS-PCIDs for 4π ion emission image detection of different gases in particular hydrogen ions or protons in a 3.5 kJ plasma focus device (PFD as uniquely observed by the unaided eyes). The panorama MS-PCID/MS-ECE image detection systems invented are novel with high potential for many applications in particular as applied to 4π panorama ion emission angular distribution image detection studies in PFD space, some results of which are presented and discussed.

Novel single-cell mega-size chambers for electrochemical etching of panorama position-sensitive polycarbonate ion image detectors.

PubMed

Sohrabi, Mehdi

2017-11-01

A novel development is made here by inventing panorama single-cell mega-size electrochemical etching (MS-ECE) chamber systems for processing panorama position-sensitive mega-size polycarbonate ion image detectors (MS-PCIDs) of potential for many neutron and ion detection applications in particular hydrogen ions or proton tracks and images detected for the first time in polycarbonates in this study. The MS-PCID is simply a large polycarbonate sheet of a desired size. The single-cell MS-ECE invented consists of two large equally sized transparent Plexiglas sheets as chamber walls holding a MS-PCID and the ECE chamber components tightly together. One wall has a large flat stainless steel electrode (dry cell) attached to it which is directly in contact with the MS-PCID and the other wall has a rod electrode with two holes to facilitate feeding and draining out the etching solution from the wet cell. A silicon rubber washer plays the role of the wet cell to hold the etchant and the electrical insulator to isolate the dry cell from the wet cell. A simple 50 Hz-HV home-made generator provides an adequate field strength through the two electrodes across the MS-ECE chamber. Two panorama single-cell MS-ECE chamber systems (circular and rectangular shapes) constructed were efficiently applied to processing the MS-PCIDs for 4π ion emission image detection of different gases in particular hydrogen ions or protons in a 3.5 kJ plasma focus device (PFD as uniquely observed by the unaided eyes). The panorama MS-PCID/MS-ECE image detection systems invented are novel with high potential for many applications in particular as applied to 4π panorama ion emission angular distribution image detection studies in PFD space, some results of which are presented and discussed.

Large area space qualified thermoelectrically (TE) cooled HgCdTe MW photovoltaic detectors for the Halogen Occultation Experiment (HALOE)

NASA Technical Reports Server (NTRS)

Norton, P. W.; Zimmermann, P. H.; Briggs, R. J.; Hartle, N. M.

1986-01-01

Large-area, HgCdTe MW photovoltaic detectors have been developed for the NASA-HALOE instrument scheduled for operation on the Upper Atmospheric Research Satellite. The photodiodes will be TE-cooled and were designed to operate in the 5.1-5.4 micron band at 185 K to measure nitric oxide concentrations in the atmosphere. The active area required 15 micron thick devices and a full backside common contact. Reflections from the backside contact doubled the effective thickness of the detectors. Optical interference from reflections was eliminated with a dual layer front surface A/R coating. Bakeout reliability was optimized by having Au metallization for both n and p interconnects. Detailed performance data and a model for the optical stack are presented.

Significant performance enhancement of InGaN/GaN nanorod LEDs with multi-layer graphene transparent electrodes by alumina surface passivation

NASA Astrophysics Data System (ADS)

Latzel, M.; Büttner, P.; Sarau, G.; Höflich, K.; Heilmann, M.; Chen, W.; Wen, X.; Conibeer, G.; Christiansen, S. H.

2017-02-01

Nanotextured surfaces provide an ideal platform for efficiently capturing and emitting light. However, the increased surface area in combination with surface defects induced by nanostructuring e.g. using reactive ion etching (RIE) negatively affects the device’s active region and, thus, drastically decreases device performance. In this work, the influence of structural defects and surface states on the optical and electrical performance of InGaN/GaN nanorod (NR) light emitting diodes (LEDs) fabricated by top-down RIE of c-plane GaN with InGaN quantum wells was investigated. After proper surface treatment a significantly improved device performance could be shown. Therefore, wet chemical removal of damaged material in KOH solution followed by atomic layer deposition of only 10 {nm} alumina as wide bandgap oxide for passivation were successfully applied. Raman spectroscopy revealed that the initially compressively strained InGaN/GaN LED layer stack turned into a virtually completely relaxed GaN and partially relaxed InGaN combination after RIE etching of NRs. Time-correlated single photon counting provides evidence that both treatments—chemical etching and alumina deposition—reduce the number of pathways for non-radiative recombination. Steady-state photoluminescence revealed that the luminescent performance of the NR LEDs is increased by about 50% after KOH and 80% after additional alumina passivation. Finally, complete NR LED devices with a suspended graphene contact were fabricated, for which the effectiveness of the alumina passivation was successfully demonstrated by electroluminescence measurements.

Significant performance enhancement of InGaN/GaN nanorod LEDs with multi-layer graphene transparent electrodes by alumina surface passivation.

PubMed

Latzel, M; Büttner, P; Sarau, G; Höflich, K; Heilmann, M; Chen, W; Wen, X; Conibeer, G; Christiansen, S H

2017-02-03

Nanotextured surfaces provide an ideal platform for efficiently capturing and emitting light. However, the increased surface area in combination with surface defects induced by nanostructuring e.g. using reactive ion etching (RIE) negatively affects the device's active region and, thus, drastically decreases device performance. In this work, the influence of structural defects and surface states on the optical and electrical performance of InGaN/GaN nanorod (NR) light emitting diodes (LEDs) fabricated by top-down RIE of c-plane GaN with InGaN quantum wells was investigated. After proper surface treatment a significantly improved device performance could be shown. Therefore, wet chemical removal of damaged material in KOH solution followed by atomic layer deposition of only 10 [Formula: see text] alumina as wide bandgap oxide for passivation were successfully applied. Raman spectroscopy revealed that the initially compressively strained InGaN/GaN LED layer stack turned into a virtually completely relaxed GaN and partially relaxed InGaN combination after RIE etching of NRs. Time-correlated single photon counting provides evidence that both treatments-chemical etching and alumina deposition-reduce the number of pathways for non-radiative recombination. Steady-state photoluminescence revealed that the luminescent performance of the NR LEDs is increased by about 50% after KOH and 80% after additional alumina passivation. Finally, complete NR LED devices with a suspended graphene contact were fabricated, for which the effectiveness of the alumina passivation was successfully demonstrated by electroluminescence measurements.

Potential applications of electron emission membranes in medicine

NASA Astrophysics Data System (ADS)

Bilevych, Yevgen; Brunner, Stefan E.; Chan, Hong Wah; Charbon, Edoardo; van der Graaf, Harry; Hagen, Cornelis W.; Nützel, Gert; Pinto, Serge D.; Prodanović, Violeta; Rotman, Daan; Santagata, Fabio; Sarro, Lina; Schaart, Dennis R.; Sinsheimer, John; Smedley, John; Tao, Shuxia; Theulings, Anne M. M. G.

2016-02-01

With a miniaturised stack of transmission dynodes, a noise free amplifier is being developed for the detection of single free electrons, with excellent time- and 2D spatial resolution and efficiency. With this generic technology, a new family of detectors for individual elementary particles may become possible. Potential applications of such electron emission membranes in medicine are discussed.

UV-IR Hydrogen Fire Detector

NASA Technical Reports Server (NTRS)

Medelius, Pedro J.; Steinrock, T. (Technical Monitor)

2001-01-01

The objective of this project is to design a sensor than can accurately determine the presence of a hydrogen fire within its field of view and to eliminate the main cause of false alarms: reflections from the flare stack. Details are given in viewgraph presentation form on the technical approach, initial testing, sensor testing, intellectual property, patented technology, and licensing.

40 CFR 63.7740 - What are my monitoring requirements?

Code of Federal Regulations, 2013 CFR

2013-07-01

... positive pressure baghouse equipped with a stack that is applied to meet any PM or total metal HAP..., regardless of type, that is applied to meet any PM or total metal HAP emissions limitation in this subpart... detectors, or equivalent means. (d) For each wet scrubber subject to the operating limits in § 63.7690(b)(2...

40 CFR 63.7740 - What are my monitoring requirements?

Code of Federal Regulations, 2012 CFR

2012-07-01

... pressure baghouse equipped with a stack that is applied to meet any PM or total metal HAP emissions..., that is applied to meet any PM or total metal HAP emissions limitation in this subpart, you must... detectors, or equivalent means. (d) For each wet scrubber subject to the operating limits in § 63.7690(b)(2...

40 CFR 63.7740 - What are my monitoring requirements?

Code of Federal Regulations, 2014 CFR

2014-07-01

... positive pressure baghouse equipped with a stack that is applied to meet any PM or total metal HAP..., regardless of type, that is applied to meet any PM or total metal HAP emissions limitation in this subpart... detectors, or equivalent means. (d) For each wet scrubber subject to the operating limits in § 63.7690(b)(2...

Spectral characterization of laser-accelerated protons with CR-39 nuclear track detector.

PubMed

Seimetz, M; Bellido, P; García, P; Mur, P; Iborra, A; Soriano, A; Hülber, T; García López, J; Jiménez-Ramos, M C; Lera, R; Ruiz-de la Cruz, A; Sánchez, I; Zaffino, R; Roso, L; Benlloch, J M

2018-02-01

CR-39 nuclear track material is frequently used for the detection of protons accelerated in laser-plasma interactions. The measurement of track densities allows for determination of particle angular distributions, and information on the kinetic energy can be obtained by the use of passive absorbers. We present a precise method of measuring spectral distributions of laser-accelerated protons in a single etching and analysis process. We make use of a one-to-one relation between proton energy and track size and present a precise calibration based on monoenergetic particle beams. While this relation is limited to proton energies below 1 MeV, we show that the range of spectral measurements can be significantly extended by simultaneous use of absorbers of suitable thicknesses. Examples from laser-plasma interactions are presented, and quantitative results on proton energies and particle numbers are compared to those obtained from a time-of-flight detector. The spectrum end points of continuous energy distributions have been determined with both detector types and coincide within 50-100 keV.

Material and detector properties of cadmium manganese telluride (Cd 1-xMn xTe) crystals grown by the modified floating-zone method

DOE PAGES

Hossain, A.; Gu, G. D.; Bolotnikov, A. E.; ...

2014-12-24

We demonstrated the material- and radiation-detection properties of cadmium manganese telluride (Cd 1-xMn xTe; x=0.06), a wide-band-gap semiconductor crystal grown by the modified floating-zone method. We investigated the presence of various bulk defects, such as Te inclusions, twins, and dislocations of several as-grown indium-doped Cd 1-xMn xTe crystals using different techniques, viz., IR transmission microscopy, and chemical etching. We then fabricated four planar detectors from selected CdMnTe crystals, characterized their electrical properties, and tested their performance as room-temperature X- and gamma-ray detectors. Thus, our experimental results show that CMT crystals grown by the modified floating zone method apparently are freemore » from Te inclusions. However, we still need to optimize our growth parameters to attain high-resistivity, large-volume single-crystal CdMnTe.« less

Czech results at criticality dosimetry intercomparison 2002.

PubMed

Frantisek, Spurný; Jaroslav, Trousil

2004-01-01

Two criticality dosimetry systems were tested by Czech participants during the intercomparison held in Valduc, France, June 2002. The first consisted of the thermoluminescent detectors (TLDs) (Al-P glasses) and Si-diodes as passive neutron dosemeters. Second, it was studied to what extent the individual dosemeters used in the Czech routine personal dosimetry service can give a reliable estimation of criticality accident exposure. It was found that the first system furnishes quite reliable estimation of accidental doses. For routine individual dosimetry system, no important problems were encountered in the case of photon dosemeters (TLDs, film badge). For etched track detectors in contact with the 232Th or 235U-Al alloy, the track density saturation for the spark counting method limits the upper dose at approximately 1 Gy for neutrons with the energy >1 MeV.

ECCO: Th/U/Pu/Cm Dating of Galactic Cosmic Ray Nuclei

NASA Technical Reports Server (NTRS)

Westphal, A. J.; Weaver, B. A.; Solarz, M.; Dominquez, G.; Craig, N.; Adams, J. H.; Barbier, L. M.; Christian, E. R.; Mitchell, J. W.; Binns, W. R.;

Quartz substrate infrared photonic crystal

NASA Astrophysics Data System (ADS)

Ghadiri, Khosrow; Rejeb, Jalel; Vitchev, Vladimir N.

2003-01-01

This paper presents the fabrication of a planar photonic crystal (p2c) made of a square array of dielectric rods embedded in air, operating in the infrared spectrum. A quartz substrate is employed instead of the commonly used silicon or column III-V substrate. Our square structure has a normalized cylinder radius-to-pitch ratio of r/a = 0.248 and dielectric material contrast ɛr of 4.5. We choose a Z-cut synthetic quartz for its cut (geometry), and etching properties. Then a particular Z-axis etching process is employed in order to ensure the sharp-edged verticality of the rods and fast etching speed. We also present the computer simulations that allowed the establishment of the photonic band gaps (PBG) of our photonic crystal, as well as the actual measurements. An experimental measurement have been carried out and compared with different simulations. It was found that experimental results are in good agreement with different simulation results. Finally, a frequency selective device for optical communication based on the introduction of impurity sites in the photonic crystal is presented. With our proposed structure Optical System on a Chip (OsoC) with micro-cavity based active devices such as lasers, diodes, modulators, couplers, frequency selective emitters, add-drop filters, detectors, mux/demuxes and polarizers connected by passive waveguide links can be realized.

Surface dose measurements with commonly used detectors: a consistent thickness correction method

PubMed Central

Higgins, Patrick

2015-01-01

The purpose of this study was to review application of a consistent correction method for the solid state detectors, such as thermoluminescent dosimeters (chips (cTLD) and powder (pTLD)), optically stimulated detectors (both closed (OSL) and open (eOSL)), and radiochromic (EBT2) and radiographic (EDR2) films. In addition, to compare measured surface dose using an extrapolation ionization chamber (PTW 30‐360) with other parallel plate chambers RMI‐449 (Attix), Capintec PS‐033, PTW 30‐329 (Markus) and Memorial. Measurements of surface dose for 6 MV photons with parallel plate chambers were used to establish a baseline. cTLD, OSLs, EDR2, and EBT2 measurements were corrected using a method which involved irradiation of three dosimeter stacks, followed by linear extrapolation of individual dosimeter measurements to zero thickness. We determined the magnitude of correction for each detector and compared our results against an alternative correction method based on effective thickness. All uncorrected surface dose measurements exhibited overresponse, compared with the extrapolation chamber data, except for the Attix chamber. The closest match was obtained with the Attix chamber (−0.1%), followed by pTLD (0.5%), Capintec (4.5%), Memorial (7.3%), Markus (10%), cTLD (11.8%), eOSL (12.8%), EBT2 (14%), EDR2 (14.8%), and OSL (26%). Application of published ionization chamber corrections brought all the parallel plate results to within 1% of the extrapolation chamber. The extrapolation method corrected all solid‐state detector results to within 2% of baseline, except the OSLs. Extrapolation of dose using a simple three‐detector stack has been demonstrated to provide thickness corrections for cTLD, eOSLs, EBT2, and EDR2 which can then be used for surface dose measurements. Standard OSLs are not recommended for surface dose measurement. The effective thickness method suffers from the subjectivity inherent in the inclusion of measured percentage depth‐dose curves and is not recommended for these types of measurements. PACS number: 87.56.‐v PMID:26699319

Process variation challenges and resolution in the negative-tone develop double patterning for 20nm and below technology node

NASA Astrophysics Data System (ADS)

Mehta, Sohan S.; Ganta, Lakshmi K.; Chauhan, Vikrant; Wu, Yixu; Singh, Sunil; Ann, Chia; Subramany, Lokesh; Higgins, Craig; Erenturk, Burcin; Srivastava, Ravi; Singh, Paramjit; Koh, Hui Peng; Cho, David

2015-03-01

Immersion based 20nm technology node and below becoming very challenging to chip designers, process and integration due to multiple patterning to integrate one design layer . Negative tone development (NTD) processes have been well accepted by industry experts for enabling technologies 20 nm and below. 193i double patterning is the technology solution for pitch down to 80 nm. This imposes tight control in critical dimension(CD) variation in double patterning where design patterns are decomposed in two different masks such as in litho-etch-litho etch (LELE). CD bimodality has been widely studied in LELE double patterning. A portion of CD tolerance budget is significantly consumed by variations in CD in double patterning. The objective of this work is to study the process variation challenges and resolution in the Negative Tone Develop Process for 20 nm and Below Technology Node. This paper describes the effect of dose slope on CD variation in negative tone develop LELE process. This effect becomes even more challenging with standalone NTD developer process due to q-time driven CD variation. We studied impact of different stacks with combination of binary and attenuated phase shift mask and estimated dose slope contribution individually from stack and mask type. Mask 3D simulation was carried out to understand theoretical aspect. In order to meet the minimum insulator requirement for the worst case on wafer the overlay and critical dimension uniformity (CDU) budget margins have slimmed. Besides the litho process and tool control using enhanced metrology feedback, the variation control has other dependencies too. Color balancing between the two masks in LELE is helpful in countering effects such as iso-dense bias, and pattern shifting. Dummy insertion and the improved decomposition techniques [2] using multiple lower priority constraints can help to a great extent. Innovative color aware routing techniques [3] can also help with achieving more uniform density and color balanced layouts.

Effect of chlorination on the TlBr band edges for improved room temperature radiation detectors: Effect of chlorination on the TlBr band edges for radiation detectors

DOE PAGES

Varley, J. B.; Conway, A. M.; Voss, L. F.; ...

2015-02-09

Thallium bromide (TlBr) crystals subjected to hydrochloric acid (HCl) chemical treatments have been shown to advantageously affect device performance and longevity in TlBr-based room temperature radiation detectors, yet the exact mechanisms of the improvements remain poorly understood. Here in this paper, we investigate the influence of several HCl chemical treatments on device-grade TlBr and describe the changes in the composition and electronic structure of the surface. Composition analysis and depth profiles obtained from secondary ion mass spectrometry (SIMS) identify the extent to which each HCl etch condition affects the detector surface region and forms of a graded TlBr/TlBr 1-xCL xmore » surface heterojunction. Using a combination of X-ray photoemission spectroscopy (XPS) and hybrid density functional calculations, we are able to determine the valence band offsets, band gaps, and conduction band offsets as a function of Cl content over the entire composition range of TIBr 1-xC1 X. This study establishes a strong correlation between device process conditions, surface chemistry, and electronic structure with the goal of further optimizing the long-term stability and radiation response of TlBr-based detectors.« less

Application of dual-energy x-ray techniques for automated food container inspection

NASA Astrophysics Data System (ADS)

Shashishekhar, N.; Veselitza, D.

2016-02-01

Manufacturing for plastic food containers often results in small metal particles getting into the containers during the production process. Metal detectors are usually not sensitive enough to detect these metal particles (0.5 mm or lesser), especially when the containers are stacked in large sealed shipping packages; X-ray inspection of these packages provides a viable alternative. This paper presents the results of an investigation into dual-energy X-ray techniques for automated detection of small metal particles in plastic food container packages. The sample packages consist of sealed cardboard boxes containing stacks of food containers: plastic cups for food, and Styrofoam cups for noodles. The primary goal of the investigation was to automatically identify small metal particles down to 0.5 mm diameter in size or less, randomly located within the containers. The multiple container stacks in each box make it virtually impossible to reliably detect the particles with single-energy X-ray techniques either visually or with image processing. The stacks get overlaid in the X-ray image and create many indications almost identical in contrast and size to real metal particles. Dual-energy X-ray techniques were investigated and found to result in a clear separation of the metal particles from the food container stack-ups. Automated image analysis of the resulting images provides reliable detection of the small metal particles.

CAPRICE98: A balloon borne magnetic spectrometer to study cosmic ray antimatter and composition at different atmospheric depths

NASA Astrophysics Data System (ADS)

Ambriola, M. L.; Barbiellini, G.; Bartalucci, S.; Basini, G.; Bellotti, R.; Bergstroem, D.; Bocciolini, M.; Boezio, M.; Bravar, U.; Cafagna, F.; Carlson, P.; Casolino, M.; Castellano, M.; Ciacio, F.; Circella, M.; de Marzo, C.; de Pascale, M. P.; Finetti, N.; Francke, T.; Hof, M.; Kremer, J.; Menn, W.; Mitchell, J. W.; Morselli, A.; Ormes, J. F.; Papini, P.; Perego, A.; Piccardi, S.; Picozza, P.; Ricci, M.; Schiavon, P.; Simon, M.; Sparvoli, R.; Spillantini, P.; Stephens, S. A.; Stochaj, S. J.; Streitmatter, R. E.; Suffert, M.; Vacchi, A.; Weber, N.; Zampa, N.

1999-08-01

CAPRICE98 is a superconducting magnetic spectrometer built by the WiZard collaboration. It was launched from Ft. Sumner, NM, USA on the 28th of May 1998. For the first time a gas RICH detector has been flown together with a silicon electromagnetic calorimeter. The instrument configuration included a time of flight detector and a drift chamber stack, which were placed in the region of a magnet field, for rigidity measurement. Science objectives for this experiment include the study of antimatter in cosmic rays and that of cosmic ray composition in the atmosphere with special focus on muons.

The Development of a 30-125 Micron Array for Airborne Astronomy

NASA Technical Reports Server (NTRS)

Mason, C. G.; Dotson, J. L.; Erickson, E. F.; Farhoomand, J.; Haas, M. R.; Koerber, C. T.; Prasad, A.; Sisson, D.; Witteborn, F. C.; DeVincenzi, Donald (Technical Monitor)

2002-01-01

The development of a 30-125 micron Ge:Sb photoconductor array for AIRES (Airborne Infra-Red Echelle Spectrometer) is described. The prototype array is a 2x24 module which can be close-stacked to provide larger two-dimensional formats. Light is focused onto each detector using a collecting cone with a 2 mm pitch. The array is read out by two Raytheon SBRC-190 cryogenic multiplexers that also provide a CTIA (capacitive transimpedance amplifier) unit cell for each detector. We discuss our results from a test series conducted to measure the array performance and to evaluate its suitability for airborne astronomy.

Two color high operating temperature HgCdTe photodetectors grown by molecular beam epitaxy on silicon substrates

NASA Astrophysics Data System (ADS)

Velicu, S.; Bommena, R.; Morley, M.; Zhao, J.; Fahey, S.; Cowan, V.; Morath, C.

2013-09-01

The development of a broadband IR focal plane array poses several challenges in the area of detector design, material, device physics, fabrication process, hybridization, integration and testing. The purpose of our research is to address these challenges and demonstrate a high-performance IR system that incorporates a HgCdTe-based detector array with high uniformity and operability. Our detector architecture, grown using molecular beam epitaxy (MBE), is vertically integrated, leading to a stacked detector structure with the capability to simultaneously detect in two spectral bands. MBE is the method of choice for multiplelayer HgCdTe growth because it produces material of excellent quality and allows composition and doping control at the atomic level. Such quality and control is necessary for the fabrication of multicolor detectors since they require advanced bandgap engineering techniques. The proposed technology, based on the bandgap-tunable HgCdTe alloy, has the potential to extend the broadband detector operation towards room temperature. We present here our modeling, MBE growth and device characterization results, demonstrating Auger suppression in the LWIR band and diffusion limited behavior in the MWIR band.

High quantum efficiency and low dark count rate in multi-layer superconducting nanowire single-photon detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jafari Salim, A., E-mail: ajafaris@uwaterloo.ca; Eftekharian, A.; University of Waterloo, Waterloo, Ontario N2L 3G1

In this paper, we theoretically show that a multi-layer superconducting nanowire single-photon detector (SNSPD) is capable of approaching characteristics of an ideal SNSPD in terms of the quantum efficiency, dark count, and band-width. A multi-layer structure improves the performance in two ways. First, the potential barrier for thermally activated vortex crossing, which is the major source of dark counts and the reduction of the critical current in SNSPDs is elevated. In a multi-layer SNSPD, a vortex is made of 2D-pancake vortices that form a stack. It will be shown that the stack of pancake vortices effectively experiences a larger potentialmore » barrier compared to a vortex in a single-layer SNSPD. This leads to an increase in the experimental critical current as well as significant decrease in the dark count rate. In consequence, an increase in the quantum efficiency for photons of the same energy or an increase in the sensitivity to photons of lower energy is achieved. Second, a multi-layer structure improves the efficiency of single-photon absorption by increasing the effective optical thickness without compromising the single-photon sensitivity.« less

Study of imaging plate detector sensitivity to 5-18 MeV electrons

NASA Astrophysics Data System (ADS)

Boutoux, G.; Rabhi, N.; Batani, D.; Binet, A.; Ducret, J.-E.; Jakubowska, K.; Nègre, J.-P.; Reverdin, C.; Thfoin, I.

2015-11-01

Imaging plates (IPs) are commonly used as passive detectors in laser-plasma experiments. We calibrated at the ELSA electron beam facility (CEA DIF) the five different available types of IPs (namely, MS-SR-TR-MP-ND) to electrons from 5 to 18 MeV. In the context of diagnostic development for the PETawatt Aquitaine Laser (PETAL), we investigated the use of stacks of IP in order to increase the detection efficiency and get detection response independent from the neighboring materials such as X-ray shielding and detector supports. We also measured fading functions in the time range from a few minutes up to a few days. Finally, our results are systematically compared to GEANT4 simulations in order to provide a complete study of the IP response to electrons over the energy range relevant for PETAL experiments.

An efficient and cost-effective microchannel plate detector for slow neutron radiography

NASA Astrophysics Data System (ADS)

Wiggins, B. B.; Vadas, J.; Bancroft, D.; deSouza, Z. O.; Huston, J.; Hudan, S.; Baxter, D. V.; deSouza, R. T.

2018-05-01

A novel approach for efficiently imaging objects with slow neutrons in two dimensions is realized. Neutron sensitivity is achieved by use of a boron doped microchannel plate (MCP). The resulting electron avalanche is further amplified with a Z-stack MCP before being sensed by two orthogonally oriented wire planes. Coupling of the wire planes to delay lines efficiently encodes the position information as a time difference. To determine the position resolution, slow neutrons were used to illuminate a Cd-mask placed directly in front of the detector. Peaks in the resulting spectrum exhibited an average peak width of 329 μm FWHM, corresponding to an average intrinsic resolution of 216 μm. The center region of the detector exhibits a significantly better spatial resolution with an intrinsic resolution of <100 μm observed.

Measurement and Modeling of Blocking Contacts for Cadmium Telluride Gamma Ray Detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Beck, Patrick R.

2010-01-07

Gamma ray detectors are important in national security applications, medicine, and astronomy. Semiconductor materials with high density and atomic number, such as Cadmium Telluride (CdTe), offer a small device footprint, but their performance is limited by noise at room temperature; however, improved device design can decrease detector noise by reducing leakage current. This thesis characterizes and models two unique Schottky devices: one with an argon ion sputter etch before Schottky contact deposition and one without. Analysis of current versus voltage characteristics shows that thermionic emission alone does not describe these devices. This analysis points to reverse bias generation current ormore » leakage through an inhomogeneous barrier. Modeling the devices in reverse bias with thermionic field emission and a leaky Schottky barrier yields good agreement with measurements. Also numerical modeling with a finite-element physics-based simulator suggests that reverse bias current is a combination of thermionic emission and generation. This thesis proposes further experiments to determine the correct model for reverse bias conduction. Understanding conduction mechanisms in these devices will help develop more reproducible contacts, reduce leakage current, and ultimately improve detector performance.« less

CR-39 track detector calibration for H, He, and C ions from 0.1-0.5 MeV up to 5 MeV for laser-induced nuclear fusion product identification.

PubMed

Baccou, C; Yahia, V; Depierreux, S; Neuville, C; Goyon, C; Consoli, F; De Angelis, R; Ducret, J E; Boutoux, G; Rafelski, J; Labaune, C

2015-08-01

Laser-accelerated ion beams can be used in many applications and, especially, to initiate nuclear reactions out of thermal equilibrium. We have experimentally studied aneutronic fusion reactions induced by protons accelerated by the Target Normal Sheath Acceleration mechanism, colliding with a boron target. Such experiments require a rigorous method to identify the reaction products (alpha particles) collected in detectors among a few other ion species such as protons or carbon ions, for example. CR-39 track detectors are widely used because they are mostly sensitive to ions and their efficiency is near 100%. We present a complete calibration of CR-39 track detector for protons, alpha particles, and carbon ions. We give measurements of their track diameters for energy ranging from hundreds of keV to a few MeV and for etching times between 1 and 8 h. We used these results to identify alpha particles in our experiments on proton-boron fusion reactions initiated by laser-accelerated protons. We show that their number clearly increases when the boron fuel is preformed in a plasma state.

Enhancement of phonon backscattering due to confinement of ballistic phonon pathways in silicon as studied with a microfabricated phonon spectrometer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Otelaja, O. O.; Robinson, R. D., E-mail: rdr82@cornell.edu

2015-10-26

In this work, the mechanism for enhanced phonon backscattering in silicon is investigated. An understanding of phonon propagation through substrates has implications for engineering heat flow at the nanoscale, for understanding sources of decoherence in quantum systems, and for realizing efficient phonon-mediated particle detectors. In these systems, phonons that backscatter from the bottom of substrates, within the crystal or from interfaces, often contribute to the overall detector signal. We utilize a microscale phonon spectrometer, comprising superconducting tunnel junction emitters and detectors, to specifically probe phonon backscattering in silicon substrates (∼500 μm thick). By etching phonon “enhancers” or deep trenches (∼90 μm) aroundmore » the detectors, we show that the backscattered signal level increases by a factor of ∼2 for two enhancers versus one enhancer. Using a geometric analysis of the phonon pathways, we show that the mechanism of the backscattered phonon enhancement is due to confinement of the ballistic phonon pathways and increased scattering off the enhancer walls. Our result is applicable to the geometric design and patterning of substrates that are employed in phonon-mediated detection devices.« less

A Novel Silicon Micromachined Integrated MCM Thermal Management System

NASA Technical Reports Server (NTRS)

Kazmierczak, M. J.; Henderson, H. T.; Gerner, F. M.

1997-01-01

"Micromachining" is a chemical means of etching three-dimensional structures, typically in single- crystalline silicon. These techniques are leading toward what is coming to be referred to as MEMS (Micro Electro Mechanical Systems), where in addition to the ordinary two-dimensional (planar) microelectronics, it is possible to build three-dimensional n-ticromotors, electrically- actuated raicrovalves, hydraulic systems and much more on the same microchip. These techniques become possible because of differential etching rates of various crystallographic planes and materials used for semiconductor n-ticrofabfication. The University of Cincinnati group in collaboration with Karl Baker at NASA Lewis were the first to form micro heat pipes in silicon by the above techniques. Current work now in progress using MEMS technology is now directed towards the development of the next generation in MCM (Multi Chip Module) packaging. Here we propose to develop a complete electronic thermal management system which will allow densifica6on in chip stacking by perhaps two orders of magnitude. Furthermore the proposed technique will allow ordinary conu-nercial integrated chips to be utilized. Basically, the new technique involves etching square holes into a silicon substrate and then inserting and bonding commercially available integrated chips into these holes. For example, over a 100 1/4 in. by 1 /4 in. integrated chips can be placed on a 4 in. by 4 in. silicon substrate to form a Multi-Chip Module (MCM). Placing these MCM's in-line within an integrated rack then allows for three-diniensional stacking. Increased miniaturization of microelectronic circuits will lead to very high local heat fluxes. A high performance thermal management system will be specifically designed to remove the generated energy. More specifically, a compact heat exchanger with milli / microchannels will be developed and tested to remove the heat through the back side of this MCM assembly for moderate and high heat flux applications, respectively. The high heat load application of particular interest in mind is the motor controller developed by Martin Marietta for Nasa to control the thruster's directional actuators on space vechicles. Work is also proposed to develop highly advanced and improved porous wick structures for use in advanced heat loops. The porous wick will be micromachined from silicon using MEMS technology, thus permitting far superior control of pore size and pore distribution (over wicks made from sintered n-ietals), which in turn is expected to led to significantly improved heat loop performance.

Stretchable Dual-Capacitor Multi-Sensor for Touch-Curvature-Pressure-Strain Sensing.

PubMed

Jin, Hanbyul; Jung, Sungchul; Kim, Junhyung; Heo, Sanghyun; Lim, Jaeik; Park, Wonsang; Chu, Hye Yong; Bien, Franklin; Park, Kibog

2017-09-07

We introduce a new type of multi-functional capacitive sensor that can sense several different external stimuli. It is fabricated only with polydimethylsiloxane (PDMS) films and silver nanowire electrodes by using selective oxygen plasma treatment method without photolithography and etching processes. Differently from the conventional single-capacitor multi-functional sensors, our new multi-functional sensor is composed of two vertically-stacked capacitors (dual-capacitor). The unique dual-capacitor structure can detect the type and strength of external stimuli including curvature, pressure, strain, and touch with clear distinction, and it can also detect the surface-normal directionality of curvature, pressure, and touch. Meanwhile, the conventional single-capacitor sensor has ambiguity in distinguishing curvature and pressure and it can detect only the strength of external stimulus. The type, directionality, and strength of external stimulus can be determined based on the relative capacitance changes of the two stacked capacitors. Additionally, the logical flow reflected on a tree structure with its branches reaching the direction and strength of the corresponding external stimulus unambiguously is devised. This logical flow can be readily implemented in the sensor driving circuit if the dual-capacitor sensor is commercialized actually in the future.

Fixed interface charges between AlGaN barrier and gate stack composed of in situ grown SiN and Al{sub 2}O{sub 3} in AlGaN/GaN high electron mobility transistors with normally off capability

DOE Office of Scientific and Technical Information (OSTI.GOV)

Capriotti, M., E-mail: mattia.capriotti@tuwien.ac.at; Alexewicz, A.; Fleury, C.

2014-03-17

Using a generalized extraction method, the fixed charge density N{sub int} at the interface between in situ deposited SiN and 5 nm thick AlGaN barrier is evaluated by measurements of threshold voltage V{sub th} of an AlGaN/GaN metal insulator semiconductor high electron mobility transistor as a function of SiN thickness. The thickness of the originally deposited 50 nm thick SiN layer is reduced by dry etching. The extracted N{sub int} is in the order of the AlGaN polarization charge density. The total removal of the in situ SiN cap leads to a complete depletion of the channel region resulting in V{sub th} = +1 V.more » Fabrication of a gate stack with Al{sub 2}O{sub 3} as a second cap layer, deposited on top of the in situ SiN, is not introducing additional fixed charges at the SiN/Al{sub 2}O{sub 3} interface.« less

Dual-energy micro-CT with a dual-layer, dual-color, single-crystal scintillator.

PubMed

Maier, Daniel Simon; Schock, Jonathan; Pfeiffer, Franz

2017-03-20

A wide range of X-ray imaging applications demand micrometer spatial resolution. In material science and biology especially, there is a great interest in material determination and material separation methods. Here we present a new detector design that allows the recording of a low- and a high-energy radiography image simultaneously with micrometer spatial resolution. The detector system is composed of a layered scintillator stack, two CCDs and an optical system to image the scintillator responses onto the CCDs. We used the detector system with a standard laboratory microfocus X-ray tube to prove the working principle of the system and derive important design characteristics. With the recorded and registered dual-energy data set, the material separation and determination could be shown at an X-ray tube peak energy of up to 160 keV with a spatial resolution of 12 μm. The detector design shows a great potential for further development and a wide range of possible applications.

Development of a unit cell for a Ge:Ga detector array

NASA Technical Reports Server (NTRS)

1988-01-01

Two modules of gallium-doped germanium (Ge:Ga) infrared detectors with integrated multiplexing readouts and supporting drive electronics were designed and tested. This development investigated the feasibility of producing two-dimensional Ge:Ga arrays by stacking linear modules in a housing capable of providing uniaxial stress for enhanced long-wavelength response. Each module includes 8 detectors (1x1x2 mm) mounted to a sapphire board. The element spacing is 12 microns. The back faces of the detector elements are beveled with an 18 deg angle, which was proved to significantly enhance optical absorption. Each module includes a different silicon metal-oxide semiconductor field effect transistor (MOSFET) readout. The first circuit was built from discrete MOSFET components; the second incorporated devices taken from low-temperature integrated circuit multiplexers. The latter circuit exhibited much lower stray capacitance and improved stability. Using these switched-FET circuits, it was demonstrated that burst readout, with multiplexer active only during the readout period, could successfully be implemented at approximately 3.5 K.

Type II superlattice technology for LWIR detectors

NASA Astrophysics Data System (ADS)

Klipstein, P. C.; Avnon, E.; Azulai, D.; Benny, Y.; Fraenkel, R.; Glozman, A.; Hojman, E.; Klin, O.; Krasovitsky, L.; Langof, L.; Lukomsky, I.; Nitzani, M.; Shtrichman, I.; Rappaport, N.; Snapi, N.; Weiss, E.; Tuito, A.

2016-05-01

SCD has developed a range of advanced infrared detectors based on III-V semiconductor heterostructures grown on GaSb. The XBn/XBp family of barrier detectors enables diffusion limited dark currents, comparable with MCT Rule-07, and high quantum efficiencies. This work describes some of the technical challenges that were overcome, and the ultimate performance that was finally achieved, for SCD's new 15 μm pitch "Pelican-D LW" type II superlattice (T2SL) XBp array detector. This detector is the first of SCD's line of high performance two dimensional arrays working in the LWIR spectral range, and was designed with a ~9.3 micron cut-off wavelength and a format of 640 x 512 pixels. It contains InAs/GaSb and InAs/AlSb T2SLs, engineered using k • p modeling of the energy bands and photo-response. The wafers are grown by molecular beam epitaxy and are fabricated into Focal Plane Array (FPA) detectors using standard FPA processes, including wet and dry etching, indium bump hybridization, under-fill, and back-side polishing. The FPA has a quantum efficiency of nearly 50%, and operates at 77 K and F/2.7 with background limited performance. The pixel operability of the FPA is above 99% and it exhibits a stable residual non uniformity (RNU) of better than 0.04% of the dynamic range. The FPA uses a new digital read-out integrated circuit (ROIC), and the complete detector closely follows the interfaces of SCD's MWIR Pelican-D detector. The Pelican- D LW detector is now in the final stages of qualification and transfer to production, with first prototypes already integrated into new electro-optical systems.

Design and Fabrication of the Second-Generation KID-Based Light Detectors of CALDER

NASA Astrophysics Data System (ADS)

Colantoni, I.; Cardani, L.; Casali, N.; Cruciani, A.; Bellini, F.; Castellano, M. G.; Cosmelli, C.; D'Addabbo, A.; Di Domizio, S.; Martinez, M.; Tomei, C.; Vignati, M.

2018-04-01

The goal of the cryogenic wide-area light detectors with excellent resolution project is the development of light detectors with large active area and noise energy resolution smaller than 20 eV RMS using phonon-mediated kinetic inductance detectors (KIDs). The detectors are developed to improve the background suppression in large-mass bolometric experiments such as CUORE, via the double readout of the light and the heat released by particles interacting in the bolometers. In this work we present the fabrication process, starting from the silicon wafer arriving to the single chip. In the first part of the project, we designed and fabricated KID detectors using aluminum. Detectors are designed by means of state-of-the-art software for electromagnetic analysis (SONNET). The Al thin films (40 nm) are evaporated on high-quality, high-resistivity (> 10 kΩ cm) Si(100) substrates using an electron beam evaporator in a HV chamber. Detectors are patterned in direct-write mode, using electron beam lithography (EBL), positive tone resist poly-methyl methacrylate and lift-off process. Finally, the chip is diced into 20 × 20 mm2 chips and assembled in a holder OFHC (oxygen-free high conductivity) copper using PTFE support. To increase the energy resolution of our detectors, we are changing the superconductor to sub-stoichiometric TiN (TiN x ) deposited by means of DC magnetron sputtering. We are optimizing its deposition by means of DC magnetron reactive sputtering. For this kind of material, the fabrication process is subtractive and consists of EBL patterning through negative tone resist AR-N 7700 and deep reactive ion etching. Critical temperature of TiN x samples was measured in a dedicated cryostat.

Design and Fabrication Highlights Enabling a 2 mm, 128 Element Bolometer Array for GISMO

NASA Technical Reports Server (NTRS)

Allen, Christine; Benford, Dominic; Miller, Timothy; Staguhn, Johannes; Wollack, Edward; Moseley, Harvey

2007-01-01

The Backshort-Under-Grid (BUG) superconducting bolometer array architecture is intended to be highly versatile, operating in a large range of wavelengths and background conditions. We have undertaken a three-year program to develop key technologies and processes required to build kilopixel arrays. To validate the basic array design and to demonstrate its applicability for future kilopixel arrays, we have chosen to demonstrate a 128 element bolometer array optimized for 2 mm wavelength using a newly built Goddard instrument, GISMO (Goddard /RAM Superconducting 2-millimeter Observer). The arrays are fabricated using batch wafer processing developed and optimized for high pixel yield, low noise, and high uniformity. The molybdenum-gold superconducting transition edge sensors are fabricated using batch sputter deposition and are patterned using dry etch techniques developed at Goddard. With a detector pitch of 2 mm 8x16 array for GISMO occupies nearly one half of the processing area of a 100 mm silicon-on-insulator starting wafer. Two such arrays are produced from a single wafer along with witness samples for process characterization. To provide thermal isolation for the detector elements, at the end of the process over 90% of the silicon must be removed using deep reactive ion etching techniques. The electrical connections for each bolometer element are patterned on the top edge of the square grid supporting the array. The design considerations unique to GISMO, key fabrication challenges, and laboratory experimental results will be presented.

Nuclear tracks in CR-39 produced by carbon, oxygen, aluminium and titanium ions.

PubMed

Rickards, J; Romo, V; Golzarri, J I; Espinosa, G

2002-01-01

This work describes the response of CR-39 (allyl diglycol polycarbonate) to different ions (C, O, Al and Ti) produced by the Instituto de Fisica 3 MV 9SDH-2 Pelletron accelerator and backscattered from a thin Au film on a C support. The ion energies were chosen in series such that the ranges of the different ions in the detector were 2, 3, 4, 5, 6, 7 and 8 microm respectively for each series. Once exposed, the detectors were etched with a solution of 6.25 M KOH at 60 degrees C, and the reading was carried out using a digital image analysis system. An analysis of the measured track diameters of all the types of ions indicates that, for a given range, track kinetics are independent of type of ion, energy and stopping power.

Design Study of the Absorber Detector of a Compton Camera for On-Line Control in Ion Beam Therapy

NASA Astrophysics Data System (ADS)

Richard, M.-H.; Dahoumane, M.; Dauvergne, D.; De Rydt, M.; Dedes, G.; Freud, N.; Krimmer, J.; Letang, J. M.; Lojacono, X.; Maxim, V.; Montarou, G.; Ray, C.; Roellinghoff, F.; Testa, E.; Walenta, A. H.

2012-10-01

The goal of this study is to tune the design of the absorber detector of a Compton camera for prompt γ-ray imaging during ion beam therapy. The response of the Compton camera to a photon point source with a realistic energy spectrum (corresponding to the prompt γ-ray spectrum emitted during the carbon irradiation of a water phantom) is studied by means of Geant4 simulations. Our Compton camera consists of a stack of 2 mm thick silicon strip detectors as a scatter detector and of a scintillator plate as an absorber detector. Four scintillators are considered: LYSO, NaI, LaBr3 and BGO. LYSO and BGO appear as the most suitable materials, due to their high photo-electric cross-sections, which leads to a high percentage of fully absorbed photons. Depth-of-interaction measurements are shown to have limited influence on the spatial resolution of the camera. In our case, the thickness which gives the best compromise between a high percentage of photons that are fully absorbed and a low parallax error is about 4 cm for the LYSO detector and 4.5 cm for the BGO detector. The influence of the width of the absorber detector on the spatial resolution is not very pronounced as long as it is lower than 30 cm.

Ultrafast optical measurements of surface waves on a patterned layered nanostructure

NASA Astrophysics Data System (ADS)

Daly, Brian; Bjornsson, Matteo; Connolly, Aine; Mahat, Sushant; Rachmilowitz, Bryan; Antonelli, George; Myers, Alan; Yoo, Hui-Jae; Singh, Kanwal; King, Sean

2015-03-01

We report ultrafast optical pump-probe measurements of 12 - 54 GHz surface acoustic waves (SAWs) on patterned layered nanostructures. These very high frequency SAWs were generated and detected on the following patterned film stack: 25 nm physically vapor deposited TiN / 180 nm porous PECVD-grown a-SiOC:H dielectric / 12 nm non-porous PECVD-grown a-SiOC:H etch-stop / 100 nm CVD-grown a-SiO2 / Si (100) substrate. The TiN layer was dry plasma etched to form lines of rectangular cross section with pitches of 420 nm, 250 nm, 180 nm, and 168 nm and the lines were oriented parallel to the [110] direction on the wafer surface. The absorption of ultrafast pulses from a Ti:sapphire oscillator operating at 800 nm generated SAWs that were detected by time-delayed probe pulses from the same oscillator via a reflectivity change (ΔR) . In each of the four cases the SAW frequency increased with decreasing pitch, but not in a linear way as had been seen in previous experiments of this sort. By comparing the results with mechanical simulations, we present evidence for the detection of different types of SAWs in each case, including Rayleigh-like waves, Sezawa waves, and leaky or radiative waves. This work was supported by NSF Award DMR1206681.

Comparison of the quality of single-crystal diamonds grown on two types of seed substrates by MPCVD

NASA Astrophysics Data System (ADS)

Zhao, Yun; Guo, Yanzhao; Lin, Liangzhen; Zheng, Yuting; Hei, Lifu; Liu, Jinlong; Wei, Junjun; Chen, Liangxian; Li, Chengming

2018-06-01

Microwave plasma chemical vapor deposition (MPCVD) was used to grow single-crystal diamonds on two types of single-crystal diamond seed substrates prepared by high-pressure, high-temperature (HPHT) and chemical vapor deposition (CVD) methods. The quality of diamonds grown on the different seed substrates was compared. Fluorescence characteristics showed that the sectors of the HPHT seed substrates were obviously partitioned. Raman and absorption spectra showed that the CVD seed substrate produced higher-quality crystals with fewer nitrogen impurities. X-ray topography showed that the HPHT seed substrate had obvious growth sector boundaries, inclusions, dislocations, and stacking faults. The polarization characteristics of HPHT seed substrate were obvious, and the stress distribution was not uniform. When etching HPHT and CVD seed substrates using the same parameters, the etching morphology and extent of different growth sectors of the two substrates differed. Although extended defects were inevitably formed at the interface and propagated in the CVD layer, the dislocation density of a 1 mm-thick CVD layer grown on a CVD seed substrate was only half that of a 1 mm-thick CVD layer grown on an HPHT seed substrate. Therefore, the use of CVD seed substrate enabled the growth of a relatively higher-quality CVD single-crystal diamond.

High-productivity DRIE solutions for 3D-SiP and MEMS volume manufacturing

NASA Astrophysics Data System (ADS)

Puech, M.; Thevenoud, J. M.; Launay, N.; Arnal, N.; Godinat, P.; Andrieu, B.; Gruffat, J. M.

2006-12-01

Emerging 3D-SiP technologies and high volume MEMS applications require high productivity mass production DRIE systems. The Alcatel DRIE product range has recently been optimized to reach the highest process and hardware production performances. A study based on sub-micron high aspect ratio structures encountered in the most stringent 3D-SiP has been carried out. The optimization of the Bosch process parameters have shown ultra high silicon etch rate, with unrivaled uniformity and repeatability leading to excellent process yields. In parallel, most recent hardware and proprietary design optimization including vacuum pumping lines, process chamber, wafer chucks, pressure control system, gas delivery are discussed. A key factor for achieving the highest performances was the recognized expertise of Alcatel vacuum and plasma science technologies. These improvements have been monitored in a mass production environment for a mobile phone application. Field data analysis shows a significant reduction of cost of ownership thanks to increased throughput and much lower running costs. These benefits are now available for all 3D-SiP and high volume MEMS applications. The typical etched patterns include tapered trenches for CMOS imagers, through silicon via holes for die stacking, well controlled profile angle for 3D high precision inertial sensors, and large exposed area features for inkjet printer head and Silicon microphones.

Light Absorption Enhancement of Silicon-Based Photovoltaic Devices with Multiple Bandgap Structures of Porous Silicon

PubMed Central

Wu, Kuen-Hsien; Li, Chong-Wei

2015-01-01

Porous-silicon (PS) multi-layered structures with three stacked PS layers of different porosity were prepared on silicon (Si) substrates by successively tuning the electrochemical-etching parameters in an anodization process. The three PS layers have different optical bandgap energy and construct a triple-layered PS (TLPS) structure with multiple bandgap energy. Photovoltaic devices were fabricated by depositing aluminum electrodes of Schottky contacts on the surfaces of the developed TLPS structures. The TLPS-based devices exhibit broadband photoresponses within the spectrum of the solar irradiation and get high photocurrent for the incident light of a tungsten lamp. The improved spectral responses of devices are owing to the multi-bandgap structures of TLPS, which are designed with a layered configuration analog to a tandem cell for absorbing a wider energy range of the incidental sun light. The large photocurrent is mainly ascribed to an enhanced light-absorption ability as a result of applying nanoporous-Si thin films as the surface layers to absorb the short-wavelength light and to improve the Schottky contacts of devices. Experimental results reveal that the multi-bandgap PS structures produced from electrochemical-etching of Si wafers are potentially promising for development of highly efficient Si-based solar cells. PMID:28793542

Lowering the environmental impact of high-kappa/ metal gate stack surface preparation processes

NASA Astrophysics Data System (ADS)

Zamani, Davoud

ABSTRACT Hafnium based oxides and silicates are promising high-κ dielectrics to replace SiO2 as gate material for state-of-the-art semiconductor devices. However, integrating these new high-κ materials into the existing complementary metal-oxide semiconductor (CMOS) process remains a challenge. One particular area of concern is the use of large amounts of HF during wet etching of hafnium based oxides and silicates. The patterning of thin films of these materials is accomplished by wet etching in HF solutions. The use of HF allows dissolution of hafnium as an anionic fluoride complex. Etch selectivity with respect to SiO2 is achieved by appropriately diluting the solutions and using slightly elevated temperatures. From an ESH point of view, it would be beneficial to develop methods which would lower the use of HF. The first objective of this study is to find new chemistries and developments of new wet etch methods to reduce fluoride consumption during wet etching of hafnium based high-κ materials. Another related issue with major environmental impact is the usage of large amounts of rinsing water for removal of HF in post-etch cleaning step. Both of these require a better understanding of the HF interaction with the high-κ surface during the etching, cleaning, and rinsing processes. During the rinse, the cleaning chemical is removed from the wafers. Ensuring optimal resource usage and cycle time during the rinse requires a sound understanding and quantitative description of the transport effects that dominate the removal rate of the cleaning chemicals from the surfaces. Multiple processes, such as desorption and re-adsorption, diffusion, migration and convection, all factor into the removal rate of the cleaning chemical during the rinse. Any of these processes can be the removal rate limiting process, the bottleneck of the rinse. In fact, the process limiting the removal rate generally changes as the rinse progresses, offering the opportunity to save resources. The second objective of this study is to develop new rinse methods to reduce water and energy usage during rinsing and cleaning of hafnium based high-κ materials in single wafer-cleaning tools. It is necessary to have a metrology method which can study the effect of all process parameters that affect the rinsing by knowing surface concentration of contaminants in patterned hafnium based oxides and silicate wafers. This has been achieved by the introduction of a metrology method at The University of Arizona which monitors the transport of contaminant concentrations inside micro- and nano- structures. This is the only metrology which will be able to provide surface concentration of contaminants inside hafnium based oxides and silicate micro-structures while the rinsing process is taking place. The goal of this research is to study the effect of various process parameters on rinsing of patterned hafnium based oxides and silicate wafers, and modify a metrology method for end point detection.

Nuclear particle detection using a track-recording solid

NASA Technical Reports Server (NTRS)

Weber, M.; Weber, D.

1984-01-01

The design of the nuclear particle detector located in Purdue University's Get Away Special package which was flown aboard STS-7 is detailed. The experiment consisted of a stack of particle-detecting polymer sheets. The sheets show positive results of tracks throughout the block. A slide of each sheet was made for further analysis. Recommendations for similar experiments performed in the future are discussed.

Microtensile bond strength of three simplified adhesive systems to caries-affected dentin.

PubMed

Scholtanus, J D; Purwanta, Kenny; Dogan, Nilgun; Kleverlaan, Cees J; Feilzer, Albert J

2010-08-01

The purpose of the study was to determine the microtensile bond strength of three different simplified adhesive systems to caries-affected dentin. Fifteen extracted human molars with primary carious lesions were ground flat until dentin was exposed. Soft caries-infected dentin was excavated with the help of caries detector dye. On the remaining hard dentin, a standardized smear layer was created by polishing with 600-grit SiC paper. Teeth were divided into three groups and treated with one of the three tested adhesives: Adper Scotchbond 1 XT (3M ESPE), a 2-step etch-andrinse adhesive, Clearfil S3 Bond (Kuraray), a 1-step self-etching or all-in-one adhesive, and Clearfil SE Bond (Kuraray), a 2-step self-etching adhesive. Five-mm-thick composite buildups (Z-250, 3M ESPE) were built and light cured. After water storage for 24 h at 37ºC, the bonded specimens were sectioned into bars (1.0 x 1.0 mm; n = 20 to 30). Microtensile bond strength of normal dentin specimens and caries-affected dentin specimens was measured in a universal testing machine (crosshead speed = 1 mm/min). Data were analyzed using two-way ANOVA and Tukey's post-hoc test (p < 0.05). No significant differences in bond strength values to normal dentin between the three adhesives were found. Adper Scotchbond 1 XT and Clearfil S3 Bond showed significantly lower bond strength values to caries-affected dentin. For Clearfil SE Bond, bond strength values to normal and caries-affected dentin were not significantly different. All the tested simplified adhesives showed similar bond strength values to normal dentin. For the tested 2-step etch-and-rinse adhesive and the all-in-one adhesive, the bond strength values to caries-affected dentin were lower than to normal dentin.

Delay Line Detectors for the UVCS and Sumer Instruments on the SOHO Satellite

NASA Technical Reports Server (NTRS)

Seigmund, O. H. W.; Stock, J. M.; Marsh, D. R.; Gummin, M. A.; Raffanti, R.; Hull, J.; Gaines, G. A.; Welsh, B.; Donakowski, B.; Jelinsky, P.;

The in-capillary DPPH-capillary electrophoresis-the diode array detector combined with reversed-electrode polarity stacking mode for screening and quantifying major antioxidants in Cuscuta chinensis Lam.

PubMed

Liu, Jiao; Tian, Ji; Li, Jin; Azietaku, John Teye; Zhang, Bo-Li; Gao, Xiu-Mei; Chang, Yan-Xu

2016-07-01

An in-capillary 2, 2-diphenyl-1-picrylhydrazyl (DPPH)-CE-the DAD (in-capillary DPPH-CE-DAD) combined with reversed-electrode polarity stacking mode has been developed to screen and quantify the active antioxidant components of Cuscuta chinensis Lam. The operation parameters were optimized with regard to the pH and concentration of buffer solution, SDS, β-CDs, organic modifier, as well as separation voltage and temperature. Six antioxidants including chlorogenic acid, p-coumaric acid, rutin, hyperin, isoquercitrin, and astragalin were screened and the total antioxidant activity of the complex matrix was successfully evaluated based on the decreased peak area of DPPH by the established DPPH-CE-DAD method. Sensitivity was enhanced under reversed-electrode polarity stacking mode and 10- to 31-fold of magnitude improvement in detection sensitivity for each analyte was attained. The results demonstrated that the newly established in-capillary DPPH-CE-DAD method combined with reversed-electrode polarity stacking mode could integrate sample concentration, the oxidizing reaction, separation, and detection into one capillary to fully automate the system. It was considered a suitable technique for the separation, screening, and determination of trace antioxidants in natural products. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A Study of a Mini-Drift GEM Tracking Detector

NASA Astrophysics Data System (ADS)

Azmoun, B.; DiRuzza, B.; Franz, A.; Kiselev, A.; Pak, R.; Phipps, M.; Purschke, M. L.; Woody, C.

2016-06-01

A GEM tracking detector with an extended drift region has been studied as part of an effort to develop new tracking detectors for future experiments at RHIC and for the Electron Ion Collider that is being planned for BNL or JLAB. The detector consists of a triple GEM stack with a 1.6 cm drift region that was operated in a mini TPC type configuration. Both the position and arrival time of the charge deposited in the drift region were measured on the readout plane which allowed the reconstruction of a short vector for the track traversing the chamber. The resulting position and angle information from the vector could then be used to improve the position resolution of the detector for larger angle tracks, which deteriorates rapidly with increasing angle for conventional GEM tracking detectors using only charge centroid information. Two types of readout planes were studied. One was a COMPASS style readout plane with 400 μm pitch XY strips and the other consisted of 2 × 10 mm2 chevron pads. The detector was studied in test beams at Fermilab and CERN, along with additional measurements in the lab, in order to determine its position and angular resolution for incident track angles up to 45 degrees. Several algorithms were studied for reconstructing the vector using the position and timing information in order to optimize the position and angular resolution of the detector for the different readout planes. Applications for large angle tracking detectors at RHIC and EIC are also discussed.

DUMBO - A cosmic-ray astrophysics facility in Canada

NASA Astrophysics Data System (ADS)

Hanna, D.

1986-04-01

A deep-underground muon-bundle observatory (DUMBO) is proposed for construction at 700 m depth near Sudbury, Ontario, Canada. The DUMBO design calls for two parallel 3.6 x 21.6-m stacks of multiwire proportional chambers in adjacent mine tunnels (synthesizing a larger-area detector) and a 121-station surface EAS array with variable density to accommodate shower energies in the 100-TeV and 10-PeV ranges. The aims of DUMBO include determining the nuclear composition of cosmic rays, ultrahigh-energy gamma-ray astronomy, and characterizing the point sources of muons observed in recent proton-decay experiments; the physics of these processes and the detector capabilities they imply are discussed. Graphs, diagrams, and drawings are provided.

Landsat-5 Thematic Mapper outgassing effects

USGS Publications Warehouse

Helder, D.L.; Micijevic, E.

2004-01-01

A periodic 3% to 5% variation in detector response affecting both image and internal calibrator (IC) data has been observed in bands 5 and 7 of the Landsat-5 Thematic Mapper. The source for this variation is thought to be an interference effect due to buildup of an ice-like contaminant film on a ZnSe window, covered with an antireflective coating (ARC), of the cooled dewar containing these detectors. Periodic warming of the dewar is required in order to remove the contaminant and restore detector response to an uncontaminated level. These effects in the IC data have been characterized over four individual outgassing cycles using thin-film models to estimate transmittance of the window/ARC and ARC/contaminant film stack throughout the instrument lifetime. Based on the results obtained from this modeling, a lookup table procedure has been implemented that provides correction factors to improve the calibration accuracy of bands 5 and 7 by approximately 5%.

The Hard X-ray Imager (HXI) for the ASTRO-H Mission

NASA Astrophysics Data System (ADS)

Sato, Goro; Kokubun, Motohide; Nakazawa, Kazuhiro; Enoto, Teruaki; Fukazawa, Yasushi; Harayama, Atsushi; Hayashi, Katsuhiro; Kataoka, Jun; Katsuta, Junichiro; Kawaharada, Madoka; Laurent, Philippe; Lebrun, François; Limousin, Olivier; Makishima, Kazuo; Mizuno, Tsunefumi; Mori, Kunishiro; Nakamori, Takeshi; Noda, Hirofumi; Odaka, Hirokazu; Ohno, Masanori; Ohta, Masayuki; Saito, Shinya; Sato, Rie; Tajima, Hiroyasu; Takahashi, Hiromitsu; Takahashi, Tadayuki; Takeda, Shinichiro; Terada, Yukikatsu; Uchiyama, Hideki; Uchiyama, Yasunobu; Watanabe, Shin; Yamaoka, Kazutaka; Yatsu, Yoichi; Yuasa, Takayuki

2014-07-01

The 6th Japanese X-ray satellite, ASTRO-H, is scheduled for launch in 2015. The hard X-ray focusing imaging system will observe astronomical objects with the sensitivity for detecting point sources with a brightness of 1/100,000 times fainter than the Crab nebula at > 10 keV. The Hard X-ray Imager (HXI) is a focal plane detector 12 m below the hard X-ray telescope (HXT) covering the energy range from 5 to 80 keV. The HXI is composed of a stacked Si/CdTe semiconductor detector module and surrounding BGO scintillators. The latter work as active shields for efficient reduction of background events caused by cosmic-ray particles, cosmic X-ray background, and in-orbit radiation activation. In this paper, we describe the detector system, and present current status of flight model development, and performance of HXI using an engineering model of HXI.

Low Energy X-Ray and γ-Ray Detectors Fabricated on n-Type 4H-SiC Epitaxial Layer

NASA Astrophysics Data System (ADS)

Mandal, Krishna C.; Muzykov, Peter G.; Chaudhuri, Sandeep K.; Terry, J. Russell

2013-08-01

Schottky barrier diode (SBD) radiation detectors have been fabricated on n-type 4H-SiC epitaxial layers and evaluated for low energy x- and γ-rays detection. The detectors were found to be highly sensitive to soft x-rays in the 50 eV to few keV range and showed 2.1 % energy resolution for 59.6 keV gamma rays. The response to soft x-rays for these detectors was significantly higher than that of commercial off-the-shelf (COTS) SiC UV photodiodes. The devices have been characterized by current-voltage (I-V) measurements in the 94-700 K range, thermally stimulated current (TSC) spectroscopy, x-ray diffraction (XRD) rocking curve measurements, and defect delineating chemical etching. I-V characteristics of the detectors at 500 K showed low leakage current ( nA at 200 V) revealing a possibility of high temperature operation. The XRD rocking curve measurements revealed high quality of the epitaxial layer exhibiting a full width at half maximum (FWHM) of the rocking curve 3.6 arc sec. TSC studies in a wide range of temperature (94-550 K) revealed presence of relatively shallow levels ( 0.25 eV) in the epi bulk with a density 7×1013 cm-3 related to Al and B impurities and deeper levels located near the metal-semiconductor interface.

LHCb VELO upgrade

NASA Astrophysics Data System (ADS)

Hennessy, Karol; LHCb VELO Upgrade Collaboration

2017-02-01

The upgrade of the LHCb experiment, scheduled for LHC Run-III, scheduled to start in 2021, will transform the experiment to a trigger-less system reading out the full detector at 40 MHz event rate. All data reduction algorithms will be executed in a high-level software farm enabling the detector to run at luminosities of 2×1033 cm-2 s-1. The Vertex Locator (VELO) is the silicon vertex detector surrounding the interaction region. The current detector will be replaced with a hybrid pixel system equipped with electronics capable of reading out at 40 MHz. The upgraded VELO will provide fast pattern recognition and track reconstruction to the software trigger. The silicon pixel sensors have 55×55 μm2 pitch, and are read out by the VeloPix ASIC, from the Timepix/Medipix family. The hottest region will have pixel hit rates of 900 Mhits/s yielding a total data rate of more than 3 Tbit/s for the upgraded VELO. The detector modules are located in a separate vacuum, separated from the beam vacuum by a thin custom made foil. The foil will be manufactured through milling and possibly thinned further by chemical etching. The material budget will be minimised by the use of evaporative CO2 coolant circulating in microchannels within 400 μm thick silicon substrates. The current status of the VELO upgrade is described and latest results from operation of irradiated sensor assemblies are presented.

Micro knife-edge optical measurement device in a silicon-on-insulator substrate.

PubMed

Chiu, Yi; Pan, Jiun-Hung

2007-05-14

The knife-edge method is a commonly used technique to characterize the optical profiles of laser beams or focused spots. In this paper, we present a micro knife-edge scanner fabricated in a silicon-on-insulator substrate using the micro-electromechanical-system technology. A photo detector can be fabricated in the device to allow further integration with on-chip signal conditioning circuitry. A novel backside deep reactive ion etching process is proposed to solve the residual stress effect due to the buried oxide layer. Focused optical spot profile measurement is demonstrated.

Status of the KLOE-2 Inner Tracker

NASA Astrophysics Data System (ADS)

De Lucia, Erika

2018-01-01

KLOE-2 at the DAΦNE Φ-factory is the main experiment of the INFN Laboratori Nazionali di Frascati (LNF) and is the first high-energy experiment using the GEM technology with a cylindrical geometry, a novel idea developed at LNF. Four concentric cylindrical triple-GEM detectors compose the Inner Tracker, inserted around the interaction region and before the inner wall of the pre-existing KLOE Drift Chamber to improve the resolution on decay vertices close to the interaction point. State-of-the-art solutions have been expressly developed or tuned for this project: single-mask GEM etching, multi-layer XV patterned readout, PEEK spacer grid, GASTONE front-end board, a custom 64-channel ASIC with digital output, and the Global Interface Board for data collection, with a configurable FPGA architecture and Gigabit Ethernet. Alignment and calibration of a cylindrical GEM detector was never done before and represents one of the challenging activities of the experiment. The Inner Tracker detector construction, operation, calibration and performance obtained with cosmic-ray muons and Bhabha scattering events will be reported.

Performance limiting processes in room temperature thallium bromide radiation detectors

NASA Astrophysics Data System (ADS)

Datta, Amlan; Becla, Piotr; Moed, Demi; Motakef, Shariar

2015-09-01

Thallium Bromide (TlBr) is a promising room-temperature radiation detector candidate with excellent charge transport properties. However, several critical issues are needed to be addressed before deployment of this material for long-term field applications. In this paper, the relevance and, scientific and technological progress made towards solving these challenges for TlBr have been discussed. The possible research pathways to mitigate the concerns related to this material have been analyzed and clearly established. Findings from novel experiments performed at CapeSym have revealed that the most significant factors for achieving long-term performance stability for TlBr devices involve physical and chemical conditions of the surface, residual stress, and choice of metal contacts. Palladium electrodes on TlBr devices resulted in a 20-fold improvement in the device lifetime when compared to its Br-etched Pt counterpart. Electron and hole contributions towards the spectroscopic response of the TlBr detector significantly depend on the interaction position of the incoming radiation and was clearly observed in this study. TlBr device fabrication techniques need significant improvement in order to attain reliable, repeatable, and stable, long-term performance.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Varley, J. B.; Conway, A. M.; Voss, L. F.

Thallium bromide (TlBr) crystals subjected to hydrochloric acid (HCl) chemical treatments have been shown to advantageously affect device performance and longevity in TlBr-based room temperature radiation detectors, yet the exact mechanisms of the improvements remain poorly understood. Here in this paper, we investigate the influence of several HCl chemical treatments on device-grade TlBr and describe the changes in the composition and electronic structure of the surface. Composition analysis and depth profiles obtained from secondary ion mass spectrometry (SIMS) identify the extent to which each HCl etch condition affects the detector surface region and forms of a graded TlBr/TlBr 1-xCL xmore » surface heterojunction. Using a combination of X-ray photoemission spectroscopy (XPS) and hybrid density functional calculations, we are able to determine the valence band offsets, band gaps, and conduction band offsets as a function of Cl content over the entire composition range of TIBr 1-xC1 X. This study establishes a strong correlation between device process conditions, surface chemistry, and electronic structure with the goal of further optimizing the long-term stability and radiation response of TlBr-based detectors.« less

Simultaneous fluorescence and quantitative phase microscopy with single-pixel detectors

NASA Astrophysics Data System (ADS)

Liu, Yang; Suo, Jinli; Zhang, Yuanlong; Dai, Qionghai

2018-02-01

Multimodal microscopy offers high flexibilities for biomedical observation and diagnosis. Conventional multimodal approaches either use multiple cameras or a single camera spatially multiplexing different modes. The former needs expertise demanding alignment and the latter suffers from limited spatial resolution. Here, we report an alignment-free full-resolution simultaneous fluorescence and quantitative phase imaging approach using single-pixel detectors. By combining reference-free interferometry with single-pixel detection, we encode the phase and fluorescence of the sample in two detection arms at the same time. Then we employ structured illumination and the correlated measurements between the sample and the illuminations for reconstruction. The recovered fluorescence and phase images are inherently aligned thanks to single-pixel detection. To validate the proposed method, we built a proof-of-concept setup for first imaging the phase of etched glass with the depth of a few hundred nanometers and then imaging the fluorescence and phase of the quantum dot drop. This method holds great potential for multispectral fluorescence microscopy with additional single-pixel detectors or a spectrometer. Besides, this cost-efficient multimodal system might find broad applications in biomedical science and neuroscience.

Th/U/Pu/Cm dating of galactic cosmic rays with the extremely heavy cosmic ray composition observer

NASA Astrophysics Data System (ADS)

Westphal, Andrew J.; Weaver, Benjamin A.; Tarlé, Gregory

The principal goal of ECCO, the Extremely-heavy Cosmic-ray Composition Observer, is the measurement of the age of heavy galactic cosmic-ray nuclei using the extremely rare actinides (Th, U, Pu, Cm) as clocks. ECCO is one of two cosmic-ray instruments comprising the Heavy Nuclei Explorer (HNX), which was recently selected as one of several missions for Phase A study under NASA's Small class Explorer (SMEX) program. ECCO is based on the flight heritage of Trek, an array of barium-phosphate glass tracketch detectors deployed on the Russian space station Mir from 1991-1995. Using Trek, we measured the abundances of elements with Z > 70 in the galactic cosmic rays (GCRs). Trek consisted of a 1 m 2 array of stacks of individually polished thin BP-1 glass detectors. ECCO will be a much larger instrument, but will achieve both excellent resolution and low cost through use of a novel detector configuration. Here we report the results of recent accelerator tests of the ECCO detectors that verify detector performance. We also show the expected charge and energy resolution of ECCO as a function of energy.

Prototyping of MWIR MEMS-based optical filter combined with HgCdTe detector

NASA Astrophysics Data System (ADS)

Kozak, Dmitry A.; Fernandez, Bautista; Velicu, Silviu; Kubby, Joel

2010-02-01

In the past decades, there have been several attempts to create a tunable optical detector with operation in the infrared. The drive for creating such a filter is its wide range of applications, from passive night vision to biological and chemical sensors. Such a device would combine a tunable optical filter with a wide-range detector. In this work, we propose using a Fabry-Perot interferometer centered in the mid-wave infrared (MWIR) spectrum with an HgCdTe detector. Using a MEMS-based interferometer with an integrated Bragg stack will allow in-plane operation over a wide range. Because such devices have a tendency to warp, creating less-than-perfect optical surfaces, the Fabry-Perot interferometer is prototyped using the SOI-MUMPS process to ensure desirable operation. The mechanical design is aimed at optimal optical flatness of the moving membranes and a low operating voltage. The prototype is tested for these requirements. An HgCdTe detector provides greater performance than a pyroelectic detector used in some previous work, allowing for lower noise, greater detection speed and higher sensitivity. Both a custom HgCdTe detector and commercially available pyroelectric detector are tested with commercial optical filter. In previous work, monolithic integration of HgCdTe detectors with optical filters proved to be problematic. Part of this work investigates the best approach to combining these two components, either monolithically in HgCdTe or using a hybrid packaging approach where a silicon MEMS Fabry-Perot filter is bonded at low temperature to a HgCdTe detector.

Ultra heavy cosmic ray experiment (A0178)

NASA Technical Reports Server (NTRS)

Thompson, A.; Osullivan, D.; Bosch, J.; Keegan, R.; Wenzel, K. P.; Jansen, F.; Domingo, C.

1992-01-01

The Ultra Heavy Cosmic Ray Experiment (UHCRE) is based on a modular array of 192 side viewing solid state nuclear track detector stacks. These stacks were mounted in sets of four in 48 pressure vessels using 16 peripheral LDEF trays. The geometry factor for high energy cosmic ray nuclei, allowing for Earth shadowing, was 30 sq m sr, giving a total exposure factor of 170 sq m sr y at an orbital inclination of 28.4 degs. Scanning results indicate that about 3000 cosmic ray nuclei in the charge region with Z greater than 65 were collected. This sample is more than ten times the current world data in the field (taken to be the data set from the HEAO-3 mission plus that from the Ariel-6 mission) and is sufficient to provide the world's first statistically significant sample of actinide cosmic rays. Results are presented including a sample of ultra heavy cosmic ray nuclei, analysis of pre-flight and post-flight calibration events and details of track response in the context of detector temperature history. The integrated effect of all temperature and age related latent track variations cause a maximum charge shift of + or - 0.8e for uranium and + or - 0.6e for the platinum-lead group. Astrophysical implications of the UHCRE charge spectrum are discussed.

Method for detection and imaging over a broad spectral range

DOEpatents

Yefremenko, Volodymyr; Gordiyenko, Eduard; Pishko, legal representative, Olga; Novosad, Valentyn; Pishko, deceased; Vitalii

2007-09-25

A method of controlling the coordinate sensitivity in a superconducting microbolometer employs localized light, heating or magnetic field effects to form normal or mixed state regions on a superconducting film and to control the spatial location. Electron beam lithography and wet chemical etching were applied as pattern transfer processes in epitaxial Y--Ba--Cu--O films. Two different sensor designs were tested: (i) a 3 millimeter long and 40 micrometer wide stripe and (ii) a 1.25 millimeters long, and 50 micron wide meandering-like structure. Scanning the laser beam along the stripe leads to physical displacement of the sensitive area, and, therefore, may be used as a basis for imaging over a broad spectral range. Forming the superconducting film as a meandering structure provides the equivalent of a two-dimensional detector array. Advantages of this approach are simplicity of detector fabrication, and simplicity of the read-out process requiring only two electrical terminals.

Gossip: Gaseous pixels

NASA Astrophysics Data System (ADS)

Koffeman, E. N.

2007-12-01

Several years ago a revolutionary miniature TPC was developed using a pixel chip with a Micromegas foil spanned over it. To overcome the mechanical stability problems and improve the positioning accuracy while spanning a foil on top of a small readout chip a process has been developed in which a Micromegas-like grid is applied on a CMOS wafer in a post-processing step. This aluminum grid is supported on insulating pillars that are created by etching after the grid has been made. The energy resolution (measured on the absorption of the X-rays from a 55Fe source) was remarkably good. Several geometries have since been tested and we now believe that a Gas On Slimmed Silicon Pixel chip' (Gossip) may be realized. The drift region of such a gaseous pixel detector would be reduced to a millimeter. Such a detector is potentially very radiation hard (SLHC vertexing) but aging and sparking must be eliminated.

Auger compositional depth profiling of the metal contact-TlBr interface

NASA Astrophysics Data System (ADS)

Nelson, A. J.; Swanberg, E. L.; Voss, L. F.; Graff, R. T.; Conway, A. M.; Nikolic, R. J.; Payne, S. A.; Kim, H.; Cirignano, L.; Shah, K.

2015-08-01

Degradation of room temperature operation of TlBr radiation detectors with time is thought to be due to electromigration of Tl and Br vacancies within the crystal as well as the metal contacts migrating into the TlBr crystal itself due to electrochemical reactions at the metal/TlBr interface. Scanning Auger electron spectroscopy (AES) in combination with sputter depth profiling was used to investigate the metal contact surface/interfacial structure on TlBr devices. Device-grade TlBr was polished and subjected to a 32% HCl etch to remove surface damage and create a TlBr1-xClx surface layer prior to metal contact deposition. Auger compositional depth profiling results reveal non-equilibrium interfacial diffusion after device operation in both air and N2 at ambient temperature. These results improve our understanding of contact/device degradation versus operating environment for further enhancing radiation detector performance.

Superconducting Vacuum-Gap Crossovers for High Performance Microwave Applications

NASA Technical Reports Server (NTRS)

Denis, Kevin L.; Brown, Ari D.; Chang, Meng-Ping; Hu, Ron; U-Yen, Kongpop; Wollack, Edward J.

2016-01-01

The design and fabrication of low-loss wide-bandwidth superconducting vacuum-gap crossovers for high performance millimeter wave applications are described. In order to reduce ohmic and parasitic losses at millimeter wavelengths a vacuum gap is preferred relative to dielectric spacer. Here, vacuum-gap crossovers were realized by using a sacrificial polymer layer followed by niobium sputter deposition optimized for coating coverage over an underlying niobium signal layer. Both coplanar waveguide and microstrip crossover topologies have been explored in detail. The resulting fabrication process is compatible with a bulk micro-machining process for realizing waveguide coupled detectors, which includes sacrificial wax bonding, and wafer backside deep reactive ion etching for creation of leg isolated silicon membrane structures. Release of the vacuum gap structures along with the wax bonded wafer after DRIE is implemented in the same process step used to complete the detector fabrication. ?

Apollo 17 lunar surface cosmic ray experiment - Measurement of heavy solar wind particles

NASA Technical Reports Server (NTRS)

Zinner, E.; Walker, R. M.; Borg, J.; Maurette, M.

1974-01-01

During the Apollo 17 mission a series of metal foils and nuclear track detectors were exposed both in the sun and in the shade on the surface of the moon. Here we give the analysis of the mica detectors which were used to measure the flux of solar wind particles of Fe-group and heavier elements. These particles register as shallow pits after etching in hydrofluoric acid. Calibration experiments were performed to determine the registration properties of different ions and to simulate the lunar environment. We obtain an Fe-group flux of 39,000 per sec per sq cm, which together with the H flux measured on IMP-7 gives an Fe/H ratio of 0.000041. For elements with Z exceeding 45 we can set only an upper limit on the abundance, ruling out an overabundance of extremely heavy elements relative to iron by a factor of 4.

The response of CR-39 nuclear track detector to 1-9 MeV protons

DOE PAGES

Sinenian, N.; Rosenberg, M. J.; Manuel, M.; ...

2011-10-28

The response of CR-39 nuclear track detector (TasTrak®) to protons in the energy range of 0.92-9.28 MeV has been studied. Previous studies of the CR-39 response to protons have been extended by examining the piece-to-piece variability in addition to the effects of etch time and etchant temperature; it is shown that the shape of the CR-39 response curve to protons can vary from piece-to-piece. The effects due to the age of CR-39 have also been studied using 5.5 MeV alpha particles over a 5-year period. Track diameters were found to degrade with the age of the CR-39 itself rather thanmore » the age of the tracks, consistent with previous studies utilizing different CR-39 over shorter time periods.« less

Picosecond UV single photon detectors with lateral drift field: Concept and technologies

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yakimov, M.; Oktyabrsky, S.; Murat, P.

2015-09-01

Group III–V semiconductor materials are being considered as a Si replacement for advanced logic devices for quite some time. Advances in III–V processing technologies, such as interface and surface passivation, large area deep submicron lithography with high-aspect ratio etching primarily driven by the metal-oxide-semiconductor field-effect transistor development can also be used for other applications. In this paper we will focus on photodetectors with the drift field parallel to the surface. We compare the proposed concept to the state-of-the-art Si-based technology and discuss requirements which need to be satisfied for such detectors to be used in a single photon counting modemore » in blue and ultraviolet spectral region with about 10 ps photon timing resolution essential for numerous applications ranging from high-energy physics to medical imaging.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bozkurt, A.; Kam, E.

This study assesses the indoor radon concentrations for the city of Edirne situated in the European part of Turkey (Eastern Thrace). A total of 88 CR-39 nuclear track detectors were kept in basements of the selected apartment buildings and houses for passively determining the indoor radon levels of the dwellings for a period of three months. The detectors were then collected and a chemical process of etching was applied to the films. At this stage, the tracks left by alpha particles on the films exposed to radon gas were visible and were counted with a microscope (500xmagnification) to estimate themore » corresponding indoor radon concentrations. The average indoor radon concentration was found to be 49.2 Bq/m3 equivalent to an annual effective dose of 1.24 mSv. The measurement results obtained in this study show no significant departure from the other parts of the country.« less

Cu Pillar Low Temperature Bonding and Interconnection Technology of for 3D RF Microsystem

NASA Astrophysics Data System (ADS)

Shi, G. X.; Qian, K. Q.; Huang, M.; Yu, Y. W.; Zhu, J.

2018-03-01

In this paper 3D interconnects technologies used Cu pillars are discussed with respect to RF microsystem. While 2.5D Si interposer and 3D packaging seem to rely to cu pillars for the coming years, RF microsystem used the heterogeneous chip such as GaAs integration with Si interposers should be at low temperature. The pillars were constituted by Cu (2 micron) -Ni (2 micron) -Cu (3 micron) -Sn (1 micron) multilayer metal and total height is 8 micron on the front-side of the wafer by using electroplating. The wafer backside Cu pillar is obtained by temporary bonding, thinning and silicon surface etching. The RF interposers are stacked by Cu-Sn eutectic bonding at 260 °C. Analyzed the reliability of different pillar bonding structure.

LDH nanocages synthesized with MOF templates and their high performance as supercapacitors.

PubMed

Jiang, Zhen; Li, Zhengping; Qin, Zhenhua; Sun, Haiyan; Jiao, Xiuling; Chen, Dairong

2013-12-07

Layered double hydroxides (LDHs) are currently attracting intense research interest for their various applications. Three LDH hollow nano-polyhedra are synthesized with zeolitic imidazolate framework-67 (ZIF-67) nanocrystals as the templates. The nanocages well inherit the rhombic dodecahedral shape of the ZIF-67 templates, and the shell is composed of nanosheets assembled with an edge-to-face stacking. This is the first synthesis of the LDH non-spherical structures. And the mechanism of utilizing metal-organic framework (MOF) nanocrystals as templates is explored. Control of the simultaneous reactions, the precipitation of the shells and the template etching, is extremely crucial to the preparation of the perfect nanocages. And the Ni-Co LDH nanocages exhibit superior pseudocapacitance property due to their novel hierarchical and submicroscopic structures.

A fast response hydrogen sensor with Pd metallic grating onto a fiber's end-face

NASA Astrophysics Data System (ADS)

Yan, Haitao; Zhao, Xiaoyan; Zhang, Chao; Li, Qiu-Ze; Cao, Jingxiao; Han, Dao-Fu; Hao, Hui; Wang, Ming

2016-01-01

We demonstrated an integrated hydrogen sensor with Pd metallic grating fabricated on a fiber end-face. The grating consists of three thin metal layers in stacks, Au, WO3 and Pd. The WO3 is used as a waveguide layer between the Pd and Au layer. The Pd layer is etched by using a focused ion beam (FIB) method, forming a Pd metallic grating with period of 450 nm. The sensor is experimentally exposed to hydrogen gas environment. Changing the concentration from 0% to 4% which is the low explosive limit (LEL), the resonant wavelength measured from the reflection experienced 28.10 nm spectral changes in the visible range. The results demonstrated that the sensor is sensitive for hydrogen detection and it has fast response and low temperature effect.

Layer-controllable graphene by plasma thinning and post-annealing

NASA Astrophysics Data System (ADS)

Zhang, Lufang; Feng, Shaopeng; Xiao, Shaoqing; Shen, Gang; Zhang, Xiumei; Nan, Haiyan; Gu, Xiaofeng; Ostrikov, Kostya (Ken)

2018-05-01

The electronic structure of graphene depends crucially on its layer number and therefore engineering the number of graphene's atomic stacking layers is of great importance for the preparation of graphene-based devices. In this paper, we demonstrated a relatively less invasive, high-throughput and uniform large-area plasma thinning of graphene based on direct bombardment effect of fast-moving ionic hydrogen or argon species. Any desired number of graphene layers including trilayer, bilayer and monolayer can be obtained. Structural changes of graphene layers are studied by optical microscopy, Raman spectroscopy and atomic force microscopy. Post annealing is adopted to self-heal the lattice defects induced by the ion bombardment effect. This plasma etching technique is efficient and compatible with semiconductor manufacturing processes, and may find important applications for graphene-based device fabrication.

Test of the Angle Detecting Inclined Sensor (ADIS) Technique for Measuring Space Radiation

NASA Astrophysics Data System (ADS)

Connell, J. J.; Lopate, C.; McLaughlin, K. R.

2008-12-01

In February 2008 we exposed an Angle Detecting Inclined Sensor (ADIS) prototype to beams of 150 MeV/u 78Kr and fragments at the National Superconducting Cyclotron Laboratory's (NSCL) Coupled Cyclotron Facility (CCF). ADIS is a highly innovative and uniquely simple detector configuration used to determine the angles of incidence of heavy ions in energetic charged particle instruments. Corrections for angle of incidence are required for good charge and mass separation. An ADIS instrument is under development to fly on the GOES-R series of weather satellites. The prototype tested consisted of three ADIS detectors, two of which were inclined at an angle to the telescope axis, forming the initial detectors in a five-detector telescope stack. By comparing the signals from the ADIS detectors, the angle of incidence may be determined and a pathlength correction applied to charge and mass determinations. Thus, ADIS replaces complex position sensing detectors with a system of simple, reliable and robust Si detectors. Accelerator data were taken at multiple angles to both primary and secondary beams with a spread of energies. This test instrument represents an improvement over the previous ADIS prototype in that it used oval inclined detectors and a much lower-mass support structure, thus reducing the number of events passing through dead material. We will present the results of this test. The ADIS instrument development project was partially funded by NASA under the Living With a Star (LWS) Targeted Research and Technology program (grant NAG5-12493).

QBeRT: an innovative instrument for qualification of particle beam in real-time

NASA Astrophysics Data System (ADS)

Gallo, G.; Lo Presti, D.; Bonanno, D. L.; Longhitano, F.; Bongiovanni, D. G.; Reito, S.; Randazzo, N.; Leonora, E.; Sipala, V.; Tommasino, F.

2016-11-01

This paper describes an innovative beam diagnostic and monitoring system composed of a position sensitive detector and a residual range detector, based on scintillating optical fiber and on an innovative read-out strategy and reconstruction algorithm. The position sensitive detector consists of four layers of pre-aligned and juxtaposed scintillating fibres arranged to form two identical overlying and orthogonal planes. The 500 μm square section fibres are optically coupled to two Silicon Photomultiplier arrays using a channel reduction system patented by the Istituto Nazionale di Fisica Nucleare. The residual range detector is a stack of sixty parallel layers of the same fibres used in the position detector, each of which is optically coupled to a channel of Silicon Photomultiplier array by wavelength shifting fibres. The sensitive area of the two detectors is 9 × 9 cm2. After being fully characterized at CATANA proton therapy facility, the performance of the prototypes was tested during last year also at TIFPA proton irradiation facility. The unique feature of these detectors is the possibility to work in imaging conditions (e.g. a particle at a time up to 106 particles per second) and in therapy conditions up to 109 particles per second. The combined use of the two detectors, in imaging conditions, as an example of application, allows the particle radiography of an object. In therapy conditions, in particular, the system measures the position, the profiles, the energy and the fluence of the beam.

Solid Xenon Project

NASA Astrophysics Data System (ADS)

Balakishiyeva, Durdana N.; Mahapatra, Rupak; Saab, Tarek; Yoo, Jonghee

2010-08-01

Crystals like Germanium and Silicon need to be grown in specialized facilities which is time and money costly. It takes many runs to test the detector once it's manufactured and mishaps are very probable. It is of a great challenge to grow big germanium crystals and that's why stacking them up in a tower is the only way at the moment to increase testing mass. Liquid Noble gas experiments experiencing contamination problems, their predicted energy resolution at 10 keV and lower energy range is not as good as predicted. Every experiment is targeting one specific purpose, looking for one thing. Why not to design an experiment that is diverse and build a detector that can search for Dark Matter, Solar Axions, Neutrinoless Double Beta decay, etc. Solid Xenon detector is such detector. We designed a simple Xenon crystal growing chamber that was put together at Fermi National Accelerator Laboratory. The first phase of this experiment was to demonstrate that a good, crack free Xenon crystal can be grown (regardless of many failed attempts by various groups) and our first goal, 1 kg crystal, was successful.

Micrometeoroids and debris on LDEF

NASA Technical Reports Server (NTRS)

Mandeville, Jean-Claude

1992-01-01

Part of the LDEF tray allocated to French Experiments (FRECOPA) was devoted to the study of dust particles. The tray was located on the face of LDEF directly opposed to the velocity vector. Two passive experiments were flown: a set of glass and metallic samples; and multilayer thin foil detectors. Crater size distribution made possible the evaluation of the incident microparticle flux in the near environment. Comparisons are made with measurements obtained on the other faces of LDEF and with results from similar experiments on the MIR. Of interest was the study of impact features on stacked thin foil detectors. The top foil acted as a shield, fragmenting the projectiles and spreading the fragments over the surface of the thick plate located underneath. EDS analysis has provided evidence of impactor fragments. Detectors consisting of a thin shield and thick bottom plate appear to offer a significantly higher return of data concerning chemical analysis of impactor residues than single plate detectors. The samples of various materials offer a unique opportunity for the study of the many processes involved upon hypervelocity impact phenomena.

System design of a small OpenPET prototype with 4-layer DOI detectors.

PubMed

Yoshida, Eiji; Kinouchi, Shoko; Tashima, Hideaki; Nishikido, Fumihiko; Inadama, Naoko; Murayama, Hideo; Yamaya, Taiga

2012-01-01

We have proposed an OpenPET geometry which consists of two axially separated detector rings. The open gap is suitable for in-beam PET. We have developed the small prototype of the OpenPET especially for a proof of concept of in-beam imaging. This paper presents an overview of the main features implemented in this prototype. We also evaluated the detector performance. This prototype was designed with 2 detector rings having 8 depth-of-interaction detectors. Each detector consisted of 784 Lu(2x)Gd(2(1-x))SiO₅:Ce (LGSO) which were arranged in a 4-layer design, coupled to a position-sensitive photomultiplier tube (PS-PMT). The size of the LGSO array was smaller than the sensitive area of the PS-PMT, so that we could obtain sufficient LGSO identification. Peripheral LGSOs near the open gap directly detect the gamma rays on the side face in the OpenPET geometry. Output signals of two detectors stacked axially were projected onto one 2-dimensional position histogram for reduction of the scale of a coincidence processor. Front-end circuits were separated from the detector head by 1.2-m coaxial cables for the protection of electronic circuits from radiation damage. The detectors had sufficient crystal identification capability. Cross talk between the combined two detectors could be ignored. The timing and energy resolutions were 3.0 ns and 14%, respectively. The coincidence window was set 20 ns, because the timing histogram showed that not only the main peak, but also two small shifted peaks were caused by the coaxial cable. However, the detector offers the promise of sufficient performance, because random coincidences are at a nearly undetectable level for in-beam PET experiments.

Measurements of indoor 222RN activity in dwellings and workplaces of Curitiba (Brazil)

NASA Astrophysics Data System (ADS)

Corrêa, Janine N.; Paschuk, Sergei A.; Del Claro, Flávia; Kappke, Jaqueline; Perna, Allan F. N.; Schelin, Hugo R.; Denyak, Valeriy

2014-11-01

The present work describes the results of systematic measurements of radon (222Rn) in residential environments and workplaces in the Metropolitan Region of Curitiba (Paraná State, Brazil) during the period 2004-2012. For radon in air activity measurements, polycarbonate Track Etch Detectors CR-39, mounted in diffusion chambers protected by borosilicate glass fiber filters, were used. After being exposed in air, the CR-39 detectors were submitted to a chemical etching in a 6.25 M NaOH solution at 70 °C for 14 h. The alpha particle tracks were identified and manually counted with an optical microscope, and with the results of previously performed calibrations, the indoor activity concentration of 222Rn was calculated. The calibration of CR-39 and the alpha particle tracks chemical development procedures were performed in collaboration the National Institute of Radiological Sciences (NIRS, Japan). The major part of indoor 222Rn concentration in residences was found to be below 100 Bq/m3. In the case of working places, all measurements of 222Rn concentrations were below 100 Bq/m3. These values are considered within the limits set by international regulatory agencies, such as the US EPA and ICRP, which adopt up to 148 and 300 Bq/m3 as upper values for the reference levels for radon gas activity in dwellings, respectively. The latest value of 300 Bq/m3 for radon activity in air is proposed by ICRP considering the upper value for the individual dose reference level for radon exposure of 10 mSv/yr.

Determination of the active volumes of solid-state photon-beam dosimetry detectors using the PTB proton microbeam.

PubMed

Poppinga, Daniela; Delfs, Bjoern; Meyners, Jutta; Langner, Frank; Giesen, Ulrich; Harder, Dietrich; Poppe, Bjoern; Looe, Hui K

2018-05-04

This study aims at the experimental determination of the diameters and thicknesses of the active volumes of solid-state photon-beam detectors for clinical dosimetry. The 10 MeV proton microbeam of the PTB (Physikalisch-Technische Bundesanstalt, Braunschweig) was used to examine two synthetic diamond detectors, type microDiamond (PTW Freiburg, Germany), and the silicon detectors Diode E (PTW Freiburg, Germany) and Razor Diode (Iba Dosimetry, Germany). The knowledge of the dimensions of their active volumes is essential for their Monte Carlo simulation and their applications in small-field photon-beam dosimetry. The diameter of the active detector volume was determined from the detector current profile recorded by radially scanning the proton microbeam across the detector. The thickness of the active detector volume was determined from the detector's electrical current, the number of protons incident per time interval and their mean stopping power in the active volume. The mean energy of the protons entering this volume was assessed by comparing the measured and the simulated influence of the thickness of a stack of aluminum preabsorber foils on the detector signal. For all detector types investigated, the diameters measured for the active volume closely agreed with the manufacturers' data. For the silicon Diode E detector, the thickness determined for the active volume agreed with the manufacturer's data, while for the microDiamond detectors and the Razor Diode, the thicknesses measured slightly exceeded those stated by the manufacturers. The PTB microbeam facility was used to analyze the diameters and thicknesses of the active volumes of photon dosimetry detectors for the first time. A new method of determining the thickness values with an uncertainty of ±10% was applied. The results appear useful for further consolidating detailed geometrical knowledge of the solid-state detectors investigated, which are used in clinical small-field photon-beam dosimetry. © 2018 American Association of Physicists in Medicine.

IR-LTS a powerful non-invasive tool to observe crystal defects in as-grown silicon, after device processing, and in heteroepitaxial layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kissinger, G.; Richter, H.; Vanhellemont, J.

1996-12-01

One of the main advantages of infrared light scattering tomography (IR-LST) is the wide range of defect densities that can be studied using this technique. As-grown defects of low density and very small size as well as oxygen precipitation related defects that appear in densities up to some 1010 cm{sup -3} can be observed. As-grown wafers with a {open_quotes}stacking fault ring{close_quotes} were investigated in order to correlate the defects observed by IR-LST with the results of Secco etching and alcaline cleaning solution (SC1) treatment revealing flow pattern defects (FPDs) and crystal originated particles (COPs), respectively. These wafers were studied aftermore » a wet oxidation at 1100{degrees}C for 100 min. In processed CZ silicon wafers it was possible to identify stacking faults and prismatic punching systems directly from the IR-LST image. Brewster angle illumination is a special mode to reveal defects in epitaxial layers in a non-destructive way. Misfit dislocations in the interface between a Ge{sub 0.92}Si{sub 0.08} layer and a silicon substrate were studied using this mode that allows to observe very low dislocation densities.« less

InGaN Light-Emitting Diodes with an Embedded Nanoporous GaN Distributed Bragg Reflectors.

PubMed

Shiu, Guo-Yi; Chen, Kuei-Ting; Fan, Feng-Hsu; Huang, Kun-Pin; Hsu, Wei-Ju; Dai, Jing-Jie; Lai, Chun-Feng; Lin, Chia-Feng

2016-07-01

InGaN light emitting diodes (LED) structure with an embedded 1/4λ-stack nanoporous-GaN/undoped-GaN distributed Bragg reflectors (DBR) structure have been demonstrated. Si-heavily doped GaN epitaxial layers (n(+)-GaN) in the 12-period n(+)-GaN/u-GaN stack structure are transformed into low refractive index nanoporous GaN structure through the doping-selective electrochemical wet etching process. The central wavelength of the nanoporous DBR structure was located at 442.3 nm with a 57 nm linewidth and a 97.1% peak reflectivity. The effective cavity length (6.0λ), the effective penetration depth (278 nm) in the nanoporous DBR structure, and InGaN active layer matching to Fabry-Pérot mode order 12 were observed in the far-field photoluminescence radiative spectra. High electroluminescence emission intensity and line-width narrowing effect were measured in the DBR-LED compared with the non-treated LED structure. Non-linear emission intensity and line-width reducing effect, from 11.8 nm to 0.73 nm, were observed by increasing the laser excited power. Resonant cavity effect was observed in the InGaN LED with bottom nanoporous-DBR and top GaN/air interface.

InGaN Light-Emitting Diodes with an Embedded Nanoporous GaN Distributed Bragg Reflectors

PubMed Central

Shiu, Guo-Yi; Chen, Kuei-Ting; Fan, Feng-Hsu; Huang, Kun-Pin; Hsu, Wei-Ju; Dai, Jing-Jie; Lai, Chun-Feng; Lin, Chia-Feng

2016-01-01

InGaN light emitting diodes (LED) structure with an embedded 1/4λ-stack nanoporous-GaN/undoped-GaN distributed Bragg reflectors (DBR) structure have been demonstrated. Si-heavily doped GaN epitaxial layers (n+-GaN) in the 12-period n+-GaN/u-GaN stack structure are transformed into low refractive index nanoporous GaN structure through the doping-selective electrochemical wet etching process. The central wavelength of the nanoporous DBR structure was located at 442.3 nm with a 57 nm linewidth and a 97.1% peak reflectivity. The effective cavity length (6.0λ), the effective penetration depth (278 nm) in the nanoporous DBR structure, and InGaN active layer matching to Fabry-Pérot mode order 12 were observed in the far-field photoluminescence radiative spectra. High electroluminescence emission intensity and line-width narrowing effect were measured in the DBR-LED compared with the non-treated LED structure. Non-linear emission intensity and line-width reducing effect, from 11.8 nm to 0.73 nm, were observed by increasing the laser excited power. Resonant cavity effect was observed in the InGaN LED with bottom nanoporous-DBR and top GaN/air interface. PMID:27363290

Metal oxide multilayer hard mask system for 3D nanofabrication

NASA Astrophysics Data System (ADS)

Han, Zhongmei; Salmi, Emma; Vehkamäki, Marko; Leskelä, Markku; Ritala, Mikko

2018-02-01

We demonstrate the preparation and exploitation of multilayer metal oxide hard masks for lithography and 3D nanofabrication. Atomic layer deposition (ALD) and focused ion beam (FIB) technologies are applied for mask deposition and mask patterning, respectively. A combination of ALD and FIB was used and a patterning procedure was developed to avoid the ion beam defects commonly met when using FIB alone for microfabrication. ALD grown Al2O3/Ta2O5/Al2O3 thin film stacks were FIB milled with 30 keV gallium ions and chemically etched in 5% tetramethylammonium hydroxide at 50 °C. With metal evaporation, multilayers consisting of amorphous oxides Al2O3 and Ta2O5 can be tailored for use in 2D lift-off processing, in preparation of embedded sub-100 nm metal lines and for multilevel electrical contacts. Good pattern transfer was achieved by lift-off process from the 2D hard mask for micro- and nano-scaled fabrication. As a demonstration of the applicability of this method to 3D structures, self-supporting 3D Ta2O5 masks were made from a film stack on gold particles. Finally, thin film resistors were fabricated by utilizing controlled stiction of suspended Ta2O5 structures.

A Study of a Mini-Drift GEM Tracking Detector

DOE PAGES

Azmoun, B.; DiRuzza, B.; Franz, A.; ...

2016-06-22

In this paper, a GEM tracking detector with an extended drift region has been studied as part of an effort to develop new tracking detectors for future experiments at RHIC and for the Electron Ion Collider that is being planned for BNL or JLAB. The detector consists of a triple GEM stack with a 1.6 cm drift region that was operated in a mini TPC type configuration. Both the position and arrival time of the charge deposited in the drift region were measured on the readout plane which allowed the reconstruction of a short vector for the track traversing themore » chamber. The resulting position and angle information from the vector could then be used to improve the position resolution of the detector for larger angle tracks, which deteriorates rapidly with increasing angle for conventional GEM tracking detectors using only charge centroid information. Two types of readout planes were studied. One was a COMPASS style readout plane with 400 μm pitch XY strips and the other consisted of 2 × 10 mm 2 chevron pads. The detector was studied in test beams at Fermilab and CERN, along with additional measurements in the lab, in order to determine its position and angular resolution for incident track angles up to 45 degrees. Several algorithms were studied for reconstructing the vector using the position and timing information in order to optimize the position and angular resolution of the detector for the different readout planes. Finally, applications for large angle tracking detectors at RHIC and EIC are also discussed.« less

235U enrichment determination on UF6 cylinders with CZT detectors

NASA Astrophysics Data System (ADS)

Berndt, Reinhard; Mortreau, Patricia

2018-04-01

Measurements of uranium enrichment in UF6 transit cylinders are an important nuclear safeguards verification task, which is performed using a non-destructive assay method, the traditional enrichment meter, which involves measuring the count rate of the 186 keV gamma ray. This provides a direct measure of the 235U enrichment. Measurements are typically performed using either high-resolution detectors (Germanium) with e-cooling and battery operation, or portable devices equipped with low resolution detectors (NaI). Despite good results being achieved when measuring Low Enriched Uranium in 30B type cylinders and natural uranium in 48Y type containers using both detector systems, there are situations, which preclude the use of one or both of these systems. The focus of this work is to address some of the recognized limitations in relation to the current use of the above detector systems by considering the feasibility of an inspection instrument for 235U enrichment measurements on UF6 cylinders using the compact and light Cadmium Zinc Telluride (CZT) detectors. In the present work, test measurements were carried out, under field conditions and on full-size objects, with different CZT detectors, in particular for situations where existing systems cannot be used e.g. for stacks of 48Y type containers with depleted uranium. The main result of this study shows that the CZT detectors, actually a cluster of four μCZT1500 micro spectrometers provide as good results as the germanium detector in the ORTEC Micro-trans SPEC HPGe Portable spectrometer, and most importantly in particular for natural and depleted uranium in 48Y cylinders.

A Study of a Mini-Drift GEM Tracking Detector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Azmoun, B.; DiRuzza, B.; Franz, A.

In this paper, a GEM tracking detector with an extended drift region has been studied as part of an effort to develop new tracking detectors for future experiments at RHIC and for the Electron Ion Collider that is being planned for BNL or JLAB. The detector consists of a triple GEM stack with a 1.6 cm drift region that was operated in a mini TPC type configuration. Both the position and arrival time of the charge deposited in the drift region were measured on the readout plane which allowed the reconstruction of a short vector for the track traversing themore » chamber. The resulting position and angle information from the vector could then be used to improve the position resolution of the detector for larger angle tracks, which deteriorates rapidly with increasing angle for conventional GEM tracking detectors using only charge centroid information. Two types of readout planes were studied. One was a COMPASS style readout plane with 400 μm pitch XY strips and the other consisted of 2 × 10 mm 2 chevron pads. The detector was studied in test beams at Fermilab and CERN, along with additional measurements in the lab, in order to determine its position and angular resolution for incident track angles up to 45 degrees. Several algorithms were studied for reconstructing the vector using the position and timing information in order to optimize the position and angular resolution of the detector for the different readout planes. Finally, applications for large angle tracking detectors at RHIC and EIC are also discussed.« less

A Review of the CMOS Buried Double Junction (BDJ) Photodetector and its Applications

PubMed Central

Feruglio, Sylvain; Lu, Guo-Neng; Garda, Patrick; Vasilescu, Gabriel

2008-01-01

A CMOS Buried Double Junction PN (BDJ) photodetector consists of two vertically-stacked photodiodes. It can be operated as a photodiode with improved performance and wavelength-sensitive response. This paper presents a review of this device and its applications. The CMOS implementation and operating principle are firstly described. This includes the description of several key aspects directly related to the device performances, such as surface reflection, photon absorption and electron-hole pair generation, photocurrent and dark current generation, etc. SPICE modelling of the detector is then presented. Next, design and process considerations are proposed in order to improve the BDJ performance. Finally, several BDJ-detector-based image sensors provide a survey of their applications. PMID:27873887

Observations of the ratio of low-energy cosmic-ray positrons and electrons during solar quiet times

NASA Technical Reports Server (NTRS)

Hurford, G. J.; Mewaldt, R. A.; Stone, E. C.; Vogt, R. E.

1974-01-01

Simultaneous observations of the quiet-time interplanetary positron and electron spectra between 0.16 and 1.6 MeV are reported. The measurements were made in selected time intervals between October 1, 1972 and February 1, 1973 with the Caltech Electron/Isotope Spectrometer on the IMP-7 satellite. The detector system consists of a stack of 11 silicon surface-barrier detectors surrounded by a plastic scintillator anti-coincidence cup. The method of e+ identification and possible background effects are discussed and upper limits to the 0.16 to 1.6 MeV quiet-time positron flux are reported. During this period positrons amounted to less than 20% of the total 0.16 to 1.6 MeV electron flux.

Study of the spatial resolution of low-material GEM tracking detectors

NASA Astrophysics Data System (ADS)

Kudryavtsev, V. N.; Maltsev, T. V.; Shekhtman, L. I.

2018-02-01

The spatial resolution of GEM based tracking detectors has been simulated and measured. The simulation includes the GEANT4 based transport of high energy electrons with careful accounting for atomic relaxation processes including emission of fluorescent photons and Auger electrons and custom post-processing, including accounting for diffusion, gas amplification fluctuations, the distribution of signals on readout electrodes, electronics noise and a particular algorithm of the final coordinate calculation (center of gravity). The simulation demonstrates that a minimum of the spatial resolution of about 10 μm can be achieved with strip pitches from 250 μm to 300 μm. For larger pitches the resolution is quickly degrading reaching 80-100 μm at a pitch of 500 μm. The spatial resolution of low-material triple-GEM detectors for the DEUTRON facility at the VEPP-3 storage ring is measured at the extracted beam facility of the VEPP-4M collider. The amount of material in these detectors is reduced by etching the copper of the GEMs electrodes and using a readout structure on a thin kapton foil rather than on a glass fibre plate. The exact amount of material in one DEUTRON detector is measured by studying multiple scattering of 100 MeV electrons in it. The result of these measurements is X/X0 = 2.4×10-3 corresponding to a thickness of the copper layers of the GEM foils of 3 μm. The spatial resolution of one DEUTRON detector is measured with 500 MeV electrons and the measured value is equal to 35 ± 1 μm for orthogonal tracks.

NEW LENSLET BASED IFS WITH HIGH DETECTOR PIXEL EFFICIENCY

NASA Astrophysics Data System (ADS)

Gong, Qian

2018-01-01

Three IFS types currently used for optical design are: lenslet array, imager slicer, and lenslet array and fiber combined. Lenslet array based Integral Field Spectroscopy (IFS) is very popular for many astrophysics applications due to its compactness, simplicity, as well as cost and mass savings. The disadvantage of lenslet based IFS is its low detector pixel efficiency. Enough spacing is needed between adjacent spectral traces in cross dispersion direction to avoid wavelength cross-talk, because the same wavelength is not aligned to the same column on detector. Such as on a recent exoplanet coronagraph instrument study to support the coming astrophysics decadal survey (LUVOIR), to cover a 45 λ/D Field of View (FOV) with a spectral resolving power of 200 at shortest wavelength, a 4k x 4k detector array is needed. This large format EMCCD pushes the detector into technology development area with a low TRL. Besides the future mission, it will help WFIRST coronagraph IFS by packing all spectra into a smaller area on detector, which will reduce the chance for electrons to be trapped in pixels, and slow the detector degradation during the mission.The innovation we propose here is to increase the detector packing efficiency by grouping a number of lenslets together to form many mini slits. In other words, a number of spots (Point Spread Function at lenslet focus) are aligned into a line to resemble a mini slit. Therefore, wavelength cross-talk is no longer a concern anymore. This combines the advantage of lenslet array and imager slicer together. The isolation rows between spectral traces in cross dispersion direction can be reduced or removed. So the packing efficiency is greatly increased. Furthermore, the today’s microlithography and etching technique is capable of making such a lenslet array, which will relax the detector demand significantly. It will finally contribute to the habitable exoplanets study to analyzing their spectra from direct images. Detailed theory, design, analysis, and fabrication status will be presented.

Time-integrated Searches for Point-like Sources of Neutrinos with the 40-string IceCube Detector

NASA Astrophysics Data System (ADS)

Abbasi, R.; Abdou, Y.; Abu-Zayyad, T.; Adams, J.; Aguilar, J. A.; Ahlers, M.; Andeen, K.; Auffenberg, J.; Bai, X.; Baker, M.; Barwick, S. W.; Bay, R.; Bazo Alba, J. L.; Beattie, K.; Beatty, J. J.; Bechet, S.; Becker, J. K.; Becker, K.-H.; Benabderrahmane, M. L.; BenZvi, S.; Berdermann, J.; Berghaus, P.; Berley, D.; Bernardini, E.; Bertrand, D.; Besson, D. Z.; Bissok, M.; Blaufuss, E.; Blumenthal, J.; Boersma, D. J.; Bohm, C.; Bose, D.; Böser, S.; Botner, O.; Braun, J.; Brown, A. M.; Buitink, S.; Carson, M.; Chirkin, D.; Christy, B.; Clem, J.; Clevermann, F.; Cohen, S.; Colnard, C.; Cowen, D. F.; D'Agostino, M. V.; Danninger, M.; Daughhetee, J.; Davis, J. C.; De Clercq, C.; Demirörs, L.; Depaepe, O.; Descamps, F.; Desiati, P.; de Vries-Uiterweerd, G.; DeYoung, T.; Díaz-Vélez, J. C.; Dierckxsens, M.; Dreyer, J.; Dumm, J. P.; Ehrlich, R.; Eisch, J.; Ellsworth, R. W.; Engdegård, O.; Euler, S.; Evenson, P. A.; Fadiran, O.; Fazely, A. R.; Fedynitch, A.; Feusels, T.; Filimonov, K.; Finley, C.; Foerster, M. M.; Fox, B. D.; Franckowiak, A.; Franke, R.; Gaisser, T. K.; Gallagher, J.; Geisler, M.; Gerhardt, L.; Gladstone, L.; Glüsenkamp, T.; Goldschmidt, A.; Goodman, J. A.; Grant, D.; Griesel, T.; Groß, A.; Grullon, S.; Gurtner, M.; Ha, C.; Hallgren, A.; Halzen, F.; Han, K.; Hanson, K.; Helbing, K.; Herquet, P.; Hickford, S.; Hill, G. C.; Hoffman, K. D.; Homeier, A.; Hoshina, K.; Hubert, D.; Huelsnitz, W.; Hülß, J.-P.; Hulth, P. O.; Hultqvist, K.; Hussain, S.; Ishihara, A.; Jacobsen, J.; Japaridze, G. S.; Johansson, H.; Joseph, J. M.; Kampert, K.-H.; Kappes, A.; Karg, T.; Karle, A.; Kelley, J. L.; Kemming, N.; Kenny, P.; Kiryluk, J.; Kislat, F.; Klein, S. R.; Köhne, J.-H.; Kohnen, G.; Kolanoski, H.; Köpke, L.; Koskinen, D. J.; Kowalski, M.; Kowarik, T.; Krasberg, M.; Krings, T.; Kroll, G.; Kuehn, K.; Kuwabara, T.; Labare, M.; Lafebre, S.; Laihem, K.; Landsman, H.; Larson, M. J.; Lauer, R.; Lehmann, R.; Lünemann, J.; Madsen, J.; Majumdar, P.; Marotta, A.; Maruyama, R.; Mase, K.; Matis, H. S.; Matusik, M.; Meagher, K.; Merck, M.; Mészáros, P.; Meures, T.; Middell, E.; Milke, N.; Miller, J.; Montaruli, T.; Morse, R.; Movit, S. M.; Nahnhauer, R.; Nam, J. W.; Naumann, U.; Nießen, P.; Nygren, D. R.; Odrowski, S.; Olivas, A.; Olivo, M.; O'Murchadha, A.; Ono, M.; Panknin, S.; Paul, L.; Pérez de los Heros, C.; Petrovic, J.; Piegsa, A.; Pieloth, D.; Porrata, R.; Posselt, J.; Price, P. B.; Prikockis, M.; Przybylski, G. T.; Rawlins, K.; Redl, P.; Resconi, E.; Rhode, W.; Ribordy, M.; Rizzo, A.; Rodrigues, J. P.; Roth, P.; Rothmaier, F.; Rott, C.; Ruhe, T.; Rutledge, D.; Ruzybayev, B.; Ryckbosch, D.; Sander, H.-G.; Santander, M.; Sarkar, S.; Schatto, K.; Schlenstedt, S.; Schmidt, T.; Schukraft, A.; Schultes, A.; Schulz, O.; Schunck, M.; Seckel, D.; Semburg, B.; Seo, S. H.; Sestayo, Y.; Seunarine, S.; Silvestri, A.; Singh, K.; Slipak, A.; Spiczak, G. M.; Spiering, C.; Stamatikos, M.; Stanev, T.; Stephens, G.; Stezelberger, T.; Stokstad, R. G.; Stoyanov, S.; Strahler, E. A.; Straszheim, T.; Sullivan, G. W.; Swillens, Q.; Taavola, H.; Taboada, I.; Tamburro, A.; Tarasova, O.; Tepe, A.; Ter-Antonyan, S.; Tilav, S.; Toale, P. A.; Toscano, S.; Tosi, D.; Turčan, D.; van Eijndhoven, N.; Vandenbroucke, J.; Van Overloop, A.; van Santen, J.; Vehring, M.; Voge, M.; Voigt, B.; Walck, C.; Waldenmaier, T.; Wallraff, M.; Walter, M.; Weaver, Ch.; Wendt, C.; Westerhoff, S.; Whitehorn, N.; Wiebe, K.; Wiebusch, C. H.; Williams, D. R.; Wischnewski, R.; Wissing, H.; Wolf, M.; Woschnagg, K.; Xu, C.; Xu, X. W.; Yodh, G.; Yoshida, S.; Zarzhitsky, P.; IceCube Collaboration

2011-05-01

We present the results of time-integrated searches for astrophysical neutrino sources in both the northern and southern skies. Data were collected using the partially completed IceCube detector in the 40-string configuration recorded between 2008 April 5 and 2009 May 20, totaling 375.5 days livetime. An unbinned maximum likelihood ratio method is used to search for astrophysical signals. The data sample contains 36,900 events: 14,121 from the northern sky, mostly muons induced by atmospheric neutrinos, and 22,779 from the southern sky, mostly high-energy atmospheric muons. The analysis includes searches for individual point sources and stacked searches for sources in a common class, sometimes including a spatial extent. While this analysis is sensitive to TeV-PeV energy neutrinos in the northern sky, it is primarily sensitive to neutrinos with energy greater than about 1 PeV in the southern sky. No evidence for a signal is found in any of the searches. Limits are set for neutrino fluxes from astrophysical sources over the entire sky and compared to predictions. The sensitivity is at least a factor of two better than previous searches (depending on declination), with 90% confidence level muon neutrino flux upper limits being between E 2 dΦ/dE ~ 2-200 × 10-12 TeV cm-2 s-1 in the northern sky and between 3-700 × 10-12 TeV cm-2 s-1 in the southern sky. The stacked source searches provide the best limits to specific source classes. The full IceCube detector is expected to improve the sensitivity to dΦ/dEvpropE -2 sources by another factor of two in the first year of operation.

Impact of environmental factors on PADC radon detector sensitivity during long term storage

NASA Astrophysics Data System (ADS)

Wasikiewicz, J. M.

2018-01-01

A broad set of data on poly-allyl diglycol carbonate (PADC) exposure to various environmental conditions has been collected for a period of 1 year in order to study the aging effect on the sensitivity to radon detection. Aging is a phenomenon that occurs during long PADC storage resulting in a loss of sensitivity and/or creation of false tracks. Conditions under investigation were storages under pure nitrogen or air atmospheres, in water solutions of different pHs, in a range of temperatures, humidity and exposure to UV, gamma and neutron radiations. It was found that PADC strongly responds to some external conditions through physical changes in the polymer material; for example, etching of UV exposed detectors led to 10% loss of their thickness and the removal of the tracks layer. Performance of detectors was compared with a control that was the sensitivity of detectors from the same sheet at the time of primary calibration - within 1 month of each sheet being manufactured. Substantial difference in performance was found between storage under pure, dry nitrogen and in the presence of water. The former preserves PADC radon detection properties for the period of one year without noticeable change. The latter, on the other hand significantly reduces its performance even after 3 months' storage. It was also established that storage under low temperature is not a suitable means to preserve PADC sensitivity to radon detection due to significant loss in the detector sensitivity.

Research on annealing and properties of TlBr crystals for radiation detector use

NASA Astrophysics Data System (ADS)

Zhiping, Zheng; Yongtao, Yu; Dongxiang, Zhou; Shuping, Gong; Qiuyun, Fu

2014-03-01

In this paper, annealing was carried out in air after cutting, polishing and etching to eliminate defects introduced by crystal and wafer preparation work. The effect of annealing temperature and time on the properties of TlBr crystals was investigated. The crystal quality was characterized by infrared (IR) transmittance spectrum, I-V measurement, XRD and energy response spectrum. In the annealing temperature range (100-320 °C) applied, it was found that higher temperature was more effective for improving quality. Furthermore, it is proved that an appropriate annealing time is vital for better crystal quality.

Exposure to radon in the Gadime Cave, Kosovo.

PubMed

Bahtijari, M; Vaupotic, J; Gregoric, A; Stegnar, P; Kobal, I

2008-02-01

Air radon concentration was measured in summer and winter at 11 points along the tourist guided route in the Gadime Cave in Kosovo using alpha scintillation cells and etched track detectors. At two points in summer, values higher than 1700Bqm(-3) were observed; they otherwise were in the range 400-1000Bqm(-3). Values were lower in winter. The effective dose received by a person during a 90min visit is 3.7microSv in summer and 2.5microSv in winter. For a tourist guide the annual effective dose is less than 3.5mSv.

Nested potassium hydroxide etching and protective coatings for silicon-based microreactors

NASA Astrophysics Data System (ADS)

de Mas, Nuria; Schmidt, Martin A.; Jensen, Klavs F.

2014-03-01

We have developed a multilayer, multichannel silicon-based microreactor that uses elemental fluorine as a reagent and generates hydrogen fluoride as a byproduct. Nested potassium hydroxide etching (using silicon nitride and silicon oxide as masking materials) was developed to create a large number of channels (60 reaction channels connected to individual gas and liquid distributors) of significantly different depths (50-650 µm) with sloped walls (54.7° with respect to the (1 0 0) wafer surface) and precise control over their geometry. The wetted areas were coated with thermally grown silicon oxide and electron-beam evaporated nickel films to protect them from the corrosive fluorination environment. Up to four Pyrex layers were anodically bonded to three silicon layers in a total of six bonding steps to cap the microchannels and stack the reaction layers. The average pinhole density in as-evaporated films was 3 holes cm-2. Heating during anodic bonding (up to 350 °C for 4 min) did not significantly alter the film composition. Upon fluorine exposure, nickel films (160 nm thick) deposited on an adhesion layer of Cr (10 nm) over an oxidized silicon substrate (up to 500 nm thick SiO2) led to the formation of a nickel fluoride passivation layer. This microreactor was used to investigate direct fluorinations at room temperature over several hours without visible signs of film erosion.

Development of a large area microstructure photomultiplier assembly (LAMPA)

NASA Astrophysics Data System (ADS)

Clifford, E. T. H.; Dick, M.; Facina, M.; Wakeford, D.; Andrews, H. R.; Ing, H.; Best, D.; Baginski, M. J.

2017-05-01

Large area (> m2) position-sensitive readout of scintillators is important for passive/active gamma and neutron imaging for counter-terrorism applications. The goal of the LAMPA project is to provide a novel, affordable, large-area photodetector (8" x 8") by replacing the conventional dynodes of photomultiplier tubes (PMTs) with electron multiplier microstructure boards (MSBs) that can be produced using industrial manufacturing techniques. The square, planar format of the LAMPA assemblies enables tiling of multiple units to support large area applications. The LAMPA performance objectives include comparable gain, noise, timing, and energy resolution relative to conventional PMTs, as well as spatial resolution in the few mm range. The current LAMPA prototype is a stack of 8" x 8" MSBs made commercially by chemical etching of a molybdenum substrate and coated with hydrogen-terminated boron-doped diamond for high secondary emission yield (SEY). The layers of MSBs are electrically isolated using ceramic standoffs. Field-shaping grids are located between adjacent boards to achieve good transmission of electrons from one board to the next. The spacing between layers and the design of the microstructure pattern and grids were guided by simulations performed using an electro-optics code. A position sensitive anode board at the back of the stack of MSBs provides 2-D readout. This presentation discusses the trade studies performed in the design of the MSBs, the measurements of SEY from various electro-emissive materials, the electro-optics simulations conducted, the design of the 2-D readout, and the mechanical aspects of the LAMPA design, in order to achieve a gain of > 104 in an 8-stage stack of MSBs, suitable for use with various scintillators when coupled to an appropriate photocathode.

The XGS instrument on-board THESEUS

NASA Astrophysics Data System (ADS)

Fuschino, F.; Campana, R.; Labanti, C.; Marisaldi, M.; Amati, L.; Fiorini, M.; Uslenghi, M.; Baldazzi, G.; Evangelista, Y.; Elmi, I.; Feroci, M.; Frontera, F.; Rachevski, A.; Rignanese, L. P.; Vacchi, A.; Zampa, G.; Zampa, N.; Rashevskaya, I.; Bellutti, P.; Piemonte, C.

2016-10-01

Consolidated techniques used for space-borne X-ray and gamma-ray instruments are based on the use of scintillators coupled to Silicon photo-detectors. This technology associated with modern very low noise read-out electronics allows the design of innovative architectures able to reduce drastically the system complexity and power consumption, also with a moderate-to-high number of channels. These detector architectures can be exploited in the design of space instrumentation for gamma-spectroscopy with the benefit of possible smart background rejection strategies. We describe a detector prototype with 3D imaging capabilities to be employed in future gamma-ray and particle space missions in the 0.002-100 MeV energy range. The instrument is based on a stack of scintillating bars read out by Silicon Drift Detectors (SDDs) at both ends. The spatial segmentation and the crystal double-side readout allow a 3D position reconstruction with ∼3 mm accuracy within the full active volume, using a 2D readout along the two external faces of the detector. Furthermore, one of the side of SDDs can be used simultaneously to detect X-rays in the 2-30 keV energy range. The characteristics of this instrument make it suitable in next generation gamma-ray and particle space missions for Earth or outer space observations, and it will be briefly illustrated.

A High Resolution Phoswich Detector: LaBr{sub 3}(Ce) Coupled With LaCl{sub 3}(Ce)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Carmona-Gallardo, M.; Borge, M. J. G.; Briz, J. A.

2010-04-26

An innovative solution for the forward end-cap CALIFA calorimeter of R{sup 3}B is under investigation consisting of two scintillation crystals, LaBr{sub 3} and LaCl{sub 3}, stacked together in a phoswich configuration with one readout only. This dispositive should be capable of a good determination of the energy of protons and gamma radiation. This composite detector allows to deduce the initial energy of charged particles by DELTAE1+DELTAE2 identification. For gammas, the simulations show that there is a high probability that the first interaction occurs inside the scintillator at few centimeters, with a second layer, the rest of the energy is absorbed,more » or it can be used as veto event in case of no deposition in the first layer. One such a detector has been tested at the Centro de MicroAnalisis de Materiales (CMAM) in Madrid. Good resolution and time signal separation have been achieved.« less

Using the Medipix3 detector for direct electron imaging in the range 60 keV to 200 keV in electron microscopy

NASA Astrophysics Data System (ADS)

Mir, J. A.; Plackett, R.; Shipsey, I.; dos Santos, J. M. F.

2017-11-01

Hybrid pixel sensor technology such as the Medipix3 represents a unique tool for electron imaging. We have investigated its performance as a direct imaging detector using a Transmission Electron Microscope (TEM) which incorporated a Medipix3 detector with a 300 μm thick silicon layer compromising of 256×256 pixels at 55 μm pixel pitch. We present results taken with the Medipix3 in Single Pixel Mode (SPM) with electron beam energies in the range, 60-200 keV . Measurements of the Modulation Transfer Function (MTF) and the Detective Quantum Efficiency (DQE) were investigated. At a given beam energy, the MTF data was acquired by deploying the established knife edge technique. Similarly, the experimental data required to determine DQE was obtained by acquiring a stack of images of a focused beam and of free space (flatfield) to determine the Noise Power Spectrum (NPS).

Indoor concentration of radon, thoron and their progeny around granite regions in the state of Karnataka, India.

PubMed

Sannappa, J; Ningappa, C

2014-03-01

An extensive studies on the indoor activity concentrations of thoron, radon and their progeny in the granite region in the state of Karnataka, India, has been carried out since, 2007 in the scope of a lung cancer epidemiological study using solid-state nuclear track detector-based double-chamber dosemeters (LR-115, type II plastic track detector). Seventy-four dwellings of different types were selected for the measurement. The dosemeters containing SSNTD detectors were fixed 2 m above the floor. After an exposure time of 3 months (90 d), films were etched to reveal tracks. From the track density, the concentrations of radon and thoron were evaluated. The value of the indoor concentration of thoron and radon in the study area varies from 16 to 170 Bq m(-3) and 18 to 300 Bq m(-3) with medians of 66 and 82.3 Bq m(-3), respectively, and that of their progeny varies from 1.8 to 24 mWL with a median of 3.6 mWL and 1.6 to 19.6 mWL, respectively. The concentrations of indoor thoron, radon and their progeny and their equivalent effective doses are discussed.

A compactly integrated laser-induced fluorescence detector for microchip electrophoresis.

PubMed

Li, Hai-Fang; Lin, Jin-Ming; Su, Rong-Guo; Uchiyama, Katsumi; Hobo, Toshiyuki

2004-06-01

A simple and easy-to-use integrated laser-induced fluorescence detector for microchip electrophoresis was constructed and evaluated. The fluid channels and optical fiber channels in the glass microchip were fabricated using standard photolithographic techniques and wet chemical etching. A 473 nm diode-pumped laser was used as the excitation source, and the collimation and collection optics and mirrors were discarded by using a multimode optical fiber to couple the excitation light straight into the microchannel and placing the microchip directly on the top of the photomultiplier tube. A combination of filter systems was incorporated into a poly(dimethylsiloxane) layer, which was reversibly sealed to the bottom of the microchip to eliminate the scattering excitation light reaching to the photomultiplier tube. Fluorescein/calcein samples were taken as model analytes to evaluate the performance with respect to design factors. The detection limits were 0.05 microM for fluorescein and 0.18 microM for calcein, respectively. The suitability of this simple detector for fluorescence detection was demonstrated by baseline separation of fluorescein isothiocyanate (FITC)-labeled arginine, phenylalanine, and glycine and FITC within 30 s at separation length of 3.8 cm and electrical field strength of 600 V/cm.

CR-39 track detector calibration for H, He, and C ions from 0.1-0.5 MeV up to 5 MeV for laser-induced nuclear fusion product identification

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baccou, C., E-mail: claire.baccou@polytechnique.edu; Yahia, V.; Labaune, C.

Laser-accelerated ion beams can be used in many applications and, especially, to initiate nuclear reactions out of thermal equilibrium. We have experimentally studied aneutronic fusion reactions induced by protons accelerated by the Target Normal Sheath Acceleration mechanism, colliding with a boron target. Such experiments require a rigorous method to identify the reaction products (alpha particles) collected in detectors among a few other ion species such as protons or carbon ions, for example. CR-39 track detectors are widely used because they are mostly sensitive to ions and their efficiency is near 100%. We present a complete calibration of CR-39 track detectormore » for protons, alpha particles, and carbon ions. We give measurements of their track diameters for energy ranging from hundreds of keV to a few MeV and for etching times between 1 and 8 h. We used these results to identify alpha particles in our experiments on proton-boron fusion reactions initiated by laser-accelerated protons. We show that their number clearly increases when the boron fuel is preformed in a plasma state.« less

Energy-Sensitive Ion- and Cathode-Luminescent Radiation-Beam Monitors Based on Multilayer Thin-Film Designs.

PubMed

Gil-Rostra, Jorge; Ferrer, Francisco J; Espinós, Juan Pedro; González-Elipe, Agustín R; Yubero, Francisco

2017-05-17

A multilayer luminescent design concept is presented to develop energy-sensitive radiation-beam monitors on the basis of colorimetric analysis. Each luminescent layer within the stack consists of rare-earth-doped transparent oxides of optical quality and a characteristic luminescent emission under excitation with electron or ion beams. For a given type of particle beam (electron, protons, α particles, etc.), its penetration depth and therefore its energy loss at a particular buried layer within the multilayer stack depend on the energy of the initial beam. The intensity of the luminescent response of each layer is proportional to the energy deposited by the radiation beam within the layer, so characteristic color emission will be achieved if different phosphors are considered in the layers of the luminescent stack. Phosphor doping, emission efficiency, layer thickness, and multilayer structure design are key parameters relevant to achieving a broad colorimetric response. Two case examples are designed and fabricated to illustrate the capabilities of these new types of detector to evaluate the kinetic energy of either electron beams of a few kilo-electron volts or α particles of a few mega-electron volts.

Single- and two-color infrared focal plane arrays made by MBE in HgCdTe

NASA Astrophysics Data System (ADS)

Zanatta, Jean-Paul; Ferret, P.; Loyer, R.; Petroz, G.; Cremer, S.; Chamonal, Jean-Paul; Bouchut, Philippe; Million, Alain; Destefanis, Gerard L.

2000-12-01

We present here recent developments obtained at LETI infrared laboratory in the field of infrared detectors made in HgCdTe material and using the molecular beam epitaxial growth technique (MBE). We discuss the metallurgical points (growth temperature and flux control) that lead to achieve excellent quality epitaxial layers grown by MBE. We show a run-to-run reproducibility measured on growth run of more than 15 layers. The crystalline quality, surface morphology, and composition uniformity are excellent. The etch pits density (EPD) are in the low 105.cm-2 when HgCdTe grows on a CdZnTe substrate. Transport properties reveal a low n-type carrier concentration in the 1014 to 1015.cm-3 range with a carrier mobility in excess of 105 cm2/V/sec at 77K for epilayers grown with 10 micrometers cutoff wavelength. We describe the performances of several kinds of our HgCdTe- MBE devices: single color MWIR and LWIR detectors on HgCdTe/CdZnTe operating at 77K in respectively (3-5 micrometers ) and (8-12 micrometers ) wavelength range; single color MWIR detectors on HgCdTe grown on germanium heterosubstrate operating at 77K in the (3-5 micrometers ) wavelength range; two color HgCdTe detectors operating within the MWIR (3-5 micrometers ) band.

The development of an energy-independent personnel neutron dosimeter using CR-39

DOE Office of Scientific and Technical Information (OSTI.GOV)

Doremus, S.W.

The addition of specialized (n,{alpha}) radiators to a standard polyethylene/CR-39 (PE/CR-39) neutron dosimetry system was evaluated for improved response to low energy neutrons. Specialized radiators consisting of poly(vinyl alcohol) complexed with boron (natural and enriched boron-10) and poly(acrylic acid) complexed with lithium (enriched lithium-6) were evaluated. The complexion of boron with poly(vinyl alcohol) was accomplished by incorporation or surface coating. The complexion of lithium with poly(acrylic acid) was exclusively performed by incorporation. The dosimeter was designed such that the specialized radiator was in contact with the CR-39 detector (i.e., the specialized radiator was sandwiched between the CR-39 detector and polyethylenemore » radiator). The neutron response of this dosimetry system was investigated using {sup 252}Cf (moderated and bare) spontaneous fission neutrons. Detectors were chemically etched and then read with a Nikon OPTIPHOT microscope. The mean response (tracks {center dot} field{sup {minus}1}) of detectors treated with specialized (n,{alpha}) radiators were evaluated against PE/CR-39 controls. The results of this investigation demonstrate that PE/CR-39 dosimeters equipped with specialized (n,{alpha}) radiators have a noticeable response to low energy neutrons that in many instances is significantly greater than that of the controls. The addition of specialized radiators to this dosimetry system did not effect (diminish) its response to fast neutrons.« less

SWCNT-MoS2 -SWCNT Vertical Point Heterostructures.

PubMed

Zhang, Jin; Wei, Yang; Yao, Fengrui; Li, Dongqi; Ma, He; Lei, Peng; Fang, Hehai; Xiao, Xiaoyang; Lu, Zhixing; Yang, Juehan; Li, Jingbo; Jiao, Liying; Hu, Weida; Liu, Kaihui; Liu, Kai; Liu, Peng; Li, Qunqing; Lu, Wei; Fan, Shoushan; Jiang, Kaili

2017-02-01

A vertical point heterostructure (VPH) is constructed by sandwiching a two-dimensional (2D) MoS 2 flake with two cross-stacked metallic single-walled carbon nanotubes. It can be used as a field-effect transistor with high on/off ratio and a light detector with high spatial resolution. Moreover, the hybrid 1D-2D-1D VPHs open up new possibilities for nanoelectronics and nano-optoelectronics. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Measurement of LET distribution and dose equivalent on board the space shuttle STS-65

NASA Technical Reports Server (NTRS)

Hayashi, T.; Doke, T.; Kikuchi, J.; Takeuchi, R.; Hasebe, N.; Ogura, K.; Nagaoka, S.; Kato, M.; Badhwar, G. D.

1996-01-01

Space radiation dosimetry measurements have been made on board the Space Shuttle STS-65 in the Second International Microgravity Laboratory (IML-2). In these measurements, three kinds of detectors were used; one is a newly developed active detector telescope called "Real-time Radiation Monitoring Device (RRMD)" utilizing silicon semi-conductor detectors and others are conventional detectors of thermoluminescence dosimeters (TLDs) and CR-39 plastic track detectors. Using the RRMD detector, the first attempt of real-time monitoring of space radiation has been achieved successfully for a continuous period of 251.3 h, giving the temporal variations of LET distribution, particle count rates, and rates of absorbed dose and dose equivalent. The RRMD results indicate that a clear enhancement of the number of trapped particles is seen at the South Atlantic Anomaly (SAA) without clear enhancement of dose equivalent, while some daily periodic enhancements of dose equivalent due to high LET particles are seen at the lower geomagnetic cutoff regions for galactic cosmic ray particles (GCRs). Therefore, the main contribution to dose equivalent is seen to be due to GCRs in this low altitude mission (300 km). Also, the dose equivalent rates obtained by TLDs and CR-39 ranged from 146.9 to 165.2 microSv/day and the average quality factors from 1.45 to 1.57 depending on the locations and directions of detectors inside the Space-lab at this highly protected orbit for space radiation with a small inclination (28.5 degrees) and a low altitude (300 km). The LET distributions obtained by two different detectors, RRMD and CR-39, are in good agreement in the region of 15-200 keV/mm and difference of these distributions in the regions of LET < 15 keV/mm and LET > 200 keV/mm can be explained by considering characteristics of CR-39 etched track formation especially for the low LET tracks.

Measurement of LET distribution and dose equivalent on board the space shuttle STS-65.

PubMed

Hayashi, T; Doke, T; Kikuchi, J; Takeuchi, R; Hasebe, N; Ogura, K; Nagaoka, S; Kato, M; Badhwar, G D

1996-11-01

Space radiation dosimetry measurements have been made on board the Space Shuttle STS-65 in the Second International Microgravity Laboratory (IML-2). In these measurements, three kinds of detectors were used; one is a newly developed active detector telescope called "Real-time Radiation Monitoring Device (RRMD)" utilizing silicon semi-conductor detectors and others are conventional detectors of thermoluminescence dosimeters (TLDs) and CR-39 plastic track detectors. Using the RRMD detector, the first attempt of real-time monitoring of space radiation has been achieved successfully for a continuous period of 251.3 h, giving the temporal variations of LET distribution, particle count rates, and rates of absorbed dose and dose equivalent. The RRMD results indicate that a clear enhancement of the number of trapped particles is seen at the South Atlantic Anomaly (SAA) without clear enhancement of dose equivalent, while some daily periodic enhancements of dose equivalent due to high LET particles are seen at the lower geomagnetic cutoff regions for galactic cosmic ray particles (GCRs). Therefore, the main contribution to dose equivalent is seen to be due to GCRs in this low altitude mission (300 km). Also, the dose equivalent rates obtained by TLDs and CR-39 ranged from 146.9 to 165.2 microSv/day and the average quality factors from 1.45 to 1.57 depending on the locations and directions of detectors inside the Space-lab at this highly protected orbit for space radiation with a small inclination (28.5 degrees) and a low altitude (300 km). The LET distributions obtained by two different detectors, RRMD and CR-39, are in good agreement in the region of 15-200 keV/mm and difference of these distributions in the regions of LET < 15 keV/mm and LET > 200 keV/mm can be explained by considering characteristics of CR-39 etched track formation especially for the low LET tracks.

High spatial resolution detection of low-energy electrons using an event-counting method, application to point projection microscopy

NASA Astrophysics Data System (ADS)

Salançon, Evelyne; Degiovanni, Alain; Lapena, Laurent; Morin, Roger

2018-04-01

An event-counting method using a two-microchannel plate stack in a low-energy electron point projection microscope is implemented. 15 μm detector spatial resolution, i.e., the distance between first-neighbor microchannels, is demonstrated. This leads to a 7 times better microscope resolution. Compared to previous work with neutrons [Tremsin et al., Nucl. Instrum. Methods Phys. Res., Sect. A 592, 374 (2008)], the large number of detection events achieved with electrons shows that the local response of the detector is mainly governed by the angle between the hexagonal structures of the two microchannel plates. Using this method in point projection microscopy offers the prospect of working with a greater source-object distance (350 nm instead of 50 nm), advancing toward atomic resolution.

Image intensification; Proceedings of the Meeting, Los Angeles, CA, Jan. 17, 18, 1989

NASA Astrophysics Data System (ADS)

Csorba, Illes P.

Various papers on image intensification are presented. Individual topics discussed include: status of high-speed optical detector technologies, super second generation imge intensifier, gated image intensifiers and applications, resistive-anode position-sensing photomultiplier tube operational modeling, undersea imaging and target detection with gated image intensifier tubes, image intensifier modules for use with commercially available solid state cameras, specifying the components of an intensified solid state television camera, superconducting IR focal plane arrays, one-inch TV camera tube with very high resolution capacity, CCD-Digicon detector system performance parameters, high-resolution X-ray imaging device, high-output technology microchannel plate, preconditioning of microchannel plate stacks, recent advances in small-pore microchannel plate technology, performance of long-life curved channel microchannel plates, low-noise microchannel plates, development of a quartz envelope heater.

Stacked search for time shifted high energy neutrinos from gamma ray bursts with the Antares neutrino telescope

NASA Astrophysics Data System (ADS)

Adrián-Martínez, S.; Albert, A.; André, M.; Anghinolfi, M.; Anton, G.; Ardid, M.; Aubert, J.-J.; Baret, B.; Barrios-Marti, J.; Basa, S.; Bertin, V.; Biagi, S.; Bormuth, R.; Bouwhuis, M. C.; Bruijn, R.; Brunner, J.; Busto, J.; Capone, A.; Caramete, L.; Carr, J.; Chiarusi, T.; Circella, M.; Coniglione, R.; Costantini, H.; Coyle, P.; Creusot, A.; Dekeyser, I.; Deschamps, A.; De Bonis, G.; Distefano, C.; Donzaud, C.; Dornic, D.; Drouhin, D.; Dumas, A.; Eberl, T.; Elsässer, D.; Enzenhöfer, A.; Fehn, K.; Felis, I.; Fermani, P.; Folger, F.; Fusco, L. A.; Galatà, S.; Gay, P.; Geißelsöder, S.; Geyer, K.; Giordano, V.; Gleixner, A.; Gracia-Ruiz, R.; Graf, K.; Hallmann, S.; van Haren, H.; Heijboer, A. J.; Hello, Y.; Hernández-Rey, J. J.; Hößl, J.; Hofestädt, J.; Hugon, C.; James, C. W.; de Jong, M.; Kadler, M.; Kalekin, O.; Katz, U.; Kießling, D.; Kooijman, P.; Kouchner, A.; Kreter, M.; Kreykenbohm, I.; Kulikovskiy, V.; Lahmann, R.; Lefèvre, D.; Leonora, E.; Loucatos, S.; Marcelin, M.; Margiotta, A.; Marinelli, A.; Martínez-Mora, J. A.; Mathieu, A.; Michael, T.; Migliozzi, P.; Moussa, A.; Müller, C.; Nezri, E.; Păvălaş, G. E.; Pellegrino, C.; Perrina, C.; Piattelli, P.; Popa, V.; Pradier, T.; Racca, C.; Riccobene, G.; Richter, R.; Roensch, K.; Saldaña, M.; Samtleben, D. F. E.; Sánchez-Losa, A.; Sanguineti, M.; Sapienza, P.; Schmid, J.; Schnabel, J.; Schüssler, F.; Seitz, T.; Sieger, C.; Spurio, M.; Steijger, J. J. M.; Stolarczyk, Th.; Taiuti, M.; Tamburini, C.; Trovato, A.; Tselengidou, M.; Tönnis, C.; Vallage, B.; Vallée, C.; Van Elewyck, V.; Visser, E.; Vivolo, D.; Wagner, S.; Wilms, J.; Zornoza, J. D.; Zúñiga, J.

2017-01-01

A search for high-energy neutrino emission correlated with gamma-ray bursts outside the electromagnetic prompt-emission time window is presented. Using a stacking approach of the time delays between reported gamma-ray burst alerts and spatially coincident muon-neutrino signatures, data from the Antares neutrino telescope recorded between 2007 and 2012 are analysed. One year of public data from the IceCube detector between 2008 and 2009 have been also investigated. The respective timing profiles are scanned for statistically significant accumulations within 40 days of the Gamma Ray Burst, as expected from Lorentz Invariance Violation effects and some astrophysical models. No significant excess over the expected accidental coincidence rate could be found in either of the two data sets. The average strength of the neutrino signal is found to be fainter than one detectable neutrino signal per hundred gamma-ray bursts in the Antares data at 90% confidence level.

Germanium Lift-Off Masks for Thin Metal Film Patterning

NASA Technical Reports Server (NTRS)

Brown, Ari

2012-01-01

A technique has been developed for patterning thin metallic films that are, in turn, used to fabricate microelectronics circuitry and thin-film sensors. The technique uses germanium thin films as lift-off masks. This requires development of a technique to strip or undercut the germanium chemically without affecting the deposited metal. Unlike in the case of conventional polymeric lift-off masks, the substrate can be exposed to very high temperatures during processing (sputter deposition). The reason why polymeric liftoff masks cannot be exposed to very high temperatures (greater than 100 C) is because (a) they can become cross linked, making lift-off very difficult if not impossible, and (b) they can outgas nitrogen and oxygen, which then can react with the metal being deposited. Consequently, this innovation is expected to find use in the fabrication of transition edge sensors and microwave kinetic inductance detectors, which use thin superconducting films deposited at high temperature as their sensing elements. Transition edge sensors, microwave kinetic inductance detectors, and their circuitry are comprised of superconducting thin films, for example Nb and TiN. Reactive ion etching can be used to pattern these films; however, reactive ion etching also damages the underlying substrate, which is unwanted in many instances. Polymeric lift-off techniques permit thin-film patterning without any substrate damage, but they are difficult to remove and the polymer can outgas during thin-film deposition. The outgassed material can then react with the film with the consequence of altered and non-reproducible materials properties, which, in turn, is deleterious for sensors and their circuitry. The purpose of this innovation was to fabricate a germanium lift-off mask to be used for patterning thin metal films.

Development of a robust reverse tone pattern transfer process

NASA Astrophysics Data System (ADS)

Khusnatdinov, Niyaz; Doyle, Gary; Resnick, Douglas J.; Ye, Zhengmao; LaBrake, Dwayne; Milligan, Brennan; Alokozai, Fred; Chen, Jerry

2017-03-01

Pattern transfer is critical to any lithographic technology, and plays a significant role in defining the critical features in a device layer. As both the memory and logic roadmaps continue to advance, greater importance is placed on the scheme used to do the etching. For many critical layers, a need has developed which requires a multilayer stack to be defined in order to perform the pattern transfer. There are many cases however, where this standard approach does not provide the best results in terms of critical dimension (CD) fidelity and CD uniformity. As an example, when defining a contact pattern, it may be advantageous to apply a bright field mask (in order to maximize the normalized inverse log slope (NILS)) over the more conventional dark field mask. The result of applying the bright field mask in combination with positive imaging resist is to define an array of pillar patterns, which then must be converted back to holes before etching the underlying dielectric material. There have been several publications on tone reversal that is introduced in the resist process itself, but often an etch transfer process is applied to reverse the pattern tone. The purpose of this paper is to describe the use of a three layer reverse tone process (RTP) that is capable of reversing the tone of every printed feature type. The process utilizes a resist pattern, a hardmask layer and an additional protection layer. The three layer approach overcomes issues encountered when using a single masking layer. Successful tone reversal was demonstrated both on 300mm wafers and imprint masks, including the largest features in the pattern, with dimensions as great as 60 microns. Initial in-field CD uniformity is promising. CDs shifted by about 2.6nm and no change was observed in either LER or LWR. Follow-up work is required to statistically qualify in-field CDU and also understand both across wafer uniformity and feature linearity.

The Chandra Source Catalog 2.0: Combining Data for Processing (or How I learned 17 different words for "group")

NASA Astrophysics Data System (ADS)

Hain, Roger; Allen, Christopher E.; Anderson, Craig S.; Budynkiewicz, Jamie A.; Burke, Douglas; Chen, Judy C.; Civano, Francesca Maria; D'Abrusco, Raffaele; Doe, Stephen M.; Evans, Ian N.; Evans, Janet D.; Fabbiano, Giuseppina; Gibbs, Danny G., II; Glotfelty, Kenny J.; Graessle, Dale E.; Grier, John D.; Hall, Diane M.; Harbo, Peter N.; Houck, John C.; Lauer, Jennifer L.; Laurino, Omar; Lee, Nicholas P.; Martínez-Galarza, Juan Rafael; McCollough, Michael L.; McDowell, Jonathan C.; Miller, Joseph; McLaughlin, Warren; Morgan, Douglas L.; Mossman, Amy E.; Nguyen, Dan T.; Nichols, Joy S.; Nowak, Michael A.; Paxson, Charles; Plummer, David A.; Primini, Francis Anthony; Rots, Arnold H.; Siemiginowska, Aneta; Sundheim, Beth A.; Tibbetts, Michael; Van Stone, David W.; Zografou, Panagoula

2018-01-01

The Second Chandra Source Catalog (CSC2.0) combines data at multiple stages to improve detection efficiency, enhance source region identification, and match observations of the same celestial source taken with significantly different point spread functions on Chandra's detectors. The need to group data for different reasons at different times in processing results in a hierarchy of groups to which individual sources belong. Source data are initially identified as belonging to each Chandra observation ID and number (an "obsid"). Data from each obsid whose pointings are within sixty arcseconds of each other are reprojected to the same aspect reference coordinates and grouped into stacks. Detection is performed on all data in the same stack, and individual sources are identified. Finer source position and region data are determined by further processing sources whose photons may be commingled together, grouping such sources into bundles. Individual stacks which overlap to any extent are grouped into ensembles, and all stacks in the same ensemble are later processed together to identify master sources and determine their properties.We discuss the basis for the various methods of combining data for processing and precisely define how the groups are determined. We also investigate some of the issues related to grouping data and discuss what options exist and how groups have evolved from prior releases.This work has been supported by NASA under contract NAS 8-03060 to the Smithsonian Astrophysical Observatory for operation of the Chandra X-ray Center.

CUORE: The Three Towers Test

NASA Astrophysics Data System (ADS)

Sparks, Laura; Goodsell, Alison

2009-11-01

Cryogenic Underground Observatory for Rare Events (CUORE) will be part of the next generation of detectors used to search for neutrinoless double beta decay (0vBB). Located in Assergi, Italy at the Gran Sasso National Laboratory (LNGS), CUORE will be a large cryogenic bolometer composed of 988 tellurium dioxide (TeO2) detectors with a total mass of 750 kg, and will search for 0vBB in 130Te. As the experiment will monitor the extremely rare event of 0vBB, all factors contributing to background need to be minimized to effectively increase the sensitivity. We assisted the LNGS researchers over the summer of 2008 by supporting Research and Development efforts to reduce the radioactive background of the experiment. Activities involved decontaminating the copper frame of radon daughters, and chemically etching and lapping the TeO2 crystals with nitric acid and silicon dioxide, respectively, to remove surface contaminants that contribute to background counts. This work was supported in part by NSF grant PHY-0653284 and the California State Faculty Support Grant.

Measurement of ion beam angular distribution at different helium gas pressures in a plasma focus device by large-area polycarbonate detectors

NASA Astrophysics Data System (ADS)

Sohrabi, M.; Habibi, M.; Ramezani, V.

2017-02-01

The paper presents an experimental study and analysis of full helium ion density angular distributions in a 4-kJ plasma focus device (PFD) at pressures of 10, 15, 25, and 30 mbar using large-area polycarbonate track detectors (PCTDs) (15-cm etchable diameter) processed by 50-Hz-HV electrochemical etching (ECE). Helium ion track distributions at different pressures, in particular, at the main axis of the PFD are presented. Maximum ion track density of 4.4 × 104 tracks/cm2 was obtained in the PCTD placed 6 cm from the anode. The ion distributions for all pressures applied are ring-shaped, which is possibly due to the hollow cylindrical copper anode used. The large-area PCTD processed by ECE proves, at the present state-of-theart, a superior method for direct observation and analysis of ion distributions at a glance with minimum efforts and time. Some observations of the ion density distributions at different pressures are reported and discussed.

Applications of Real Space Crystallography in Characterization of Dislocations in Geological Materials in a Scanning Electron Microscope (SEM)

NASA Astrophysics Data System (ADS)

Kaboli, S.; Burnley, P. C.

2017-12-01

Imaging and characterization of defects in crystalline materials is of significant importance in various disciplines including geoscience, materials science, and applied physics. Linear defects such as dislocations and planar defects such as twins and stacking faults, strongly influence many of the properties of crystalline materials and also reflect the conditions and degree of deformation. Dislocations have been conventionally imaged in thin foils in a transmission electron microscope (TEM). Since the development of field emission scanning electron microscopes (FE-SEM) with high gun brightness and small spot size, extensive efforts have been dedicated to the imaging and characterization of dislocations in semi-conductors using electron channeling contrast imaging (ECCI) in the SEM. The obvious advantages of using SEM over TEM include easier and non-destructive sample preparation and a large field of view enabling statistical examination of the density and distribution of dislocations and other defects. In this contribution, we extend this technique to geological materials and introduce the Real Space Crystallography methodology for imaging and complete characterization of dislocations based on bend contour contrast obtained by ECCI in FE-SEM. Bend contours map out the distortion in the crystal lattice across a deformed grain. The contrast of dislocations is maximum in the vicinity of bend contours where crystal planes diffract at small and positive deviations from the Bragg positions (as defined by Bragg's law of electron diffraction). Imaging is performed in a commercial FE-SEM equipped with a standard silicon photodiode backscattered (BSE) detector and an electron backscatter diffraction (EBSD) system for crystal orientation measurements. We demonstrate the practice of this technique in characterization of a number of geological materials in particular quartz, forsterite olivine and corundum, experimentally deformed at high pressure-temperature conditions. This new approach in microstructure characterization of deformed geologic materials in FE-SEM, without the use of etching or decoration techniques, has valuable applications to both experimentally deformed and naturally deformed specimens.

First Test Of A New High Resolution Positron Camera With Four Area Detectors

NASA Astrophysics Data System (ADS)

van Laethem, E.; Kuijk, M.; Deconinck, Frank; van Miert, M.; Defrise, Michel; Townsend, D.; Wensveen, M.

1989-10-01

A PET camera consisting of two pairs of parallel area detectors has been installed at the cyclotron unit of VUB. The detectors are High Density Avalanche Chambers (HIDAC) wire-chambers with a stack of 4 or 6 lead gamma-electron converters, the sensitive area being 30 by 30 cm. The detectors are mounted on a commercial gantry allowing a 180 degree rotation during acquisition, as needed for a fully 3D image reconstruction. The camera has been interfaced to a token-ring computer network consisting of 5 workstations among which the various tasks (acquisition, reconstruction, display) can be distributed. Each coincident event is coded in 48 bits and is transmitted to the computer bus via a 512 kbytes dual ported buffer memory allowing data rates of up to 50 kHz. Fully 3D image reconstruction software has been developed, and includes new reconstruction algorithms allowing a better utilization of the available projection data. Preliminary measurements and imaging of phantoms and small animals (with 18FDG) have been performed with two of the four detectors mounted on the gantry. They indicate the expected 3D isotropic spatial resolution of 3.5 mm (FWHM, line source in air) and a sensitivity of 4 cps/μCi for a centred point source in air, corresponding to typical data rates of a few kHz. This latter figure is expected to improve by a factor of 4 after coupling of the second detector pair, since the coincidence sensitivity of this second detector pair is a factor 3 higher than that of the first one.

Characterization of the polarization and frequency selective bolometric detector architecture

NASA Astrophysics Data System (ADS)

Leong, Jonathan Ryan Kyoung Ho

2009-01-01

The Cosmic Microwave Background (CMB) has been a wonderful probe of fundamental physics and cosmology. In the future, we look towards using the polarization information encoded in the CMB for investigating the gravity waves generated by inflation. This is a daunting task as it requires orders of magnitude increases in sensitivity as well as close attention to systematic rejection and astrophysical foreground removal. We have characterized a novel detector architecture which is aimed at making these leaps towards gravity wave detection in the CMB. These detectors are called the Polarization and Frequency Selective Bolometers (PFSBs). They attempt to use all the available photon information incident on a single pixel by selecting out the two orthogonal polarizations and multiple frequency bands into separately stacked detectors in a smooth-walled waveguide. This approach is inherently multimoded and thus solves problems with downlink and readout throughput by catching more photons per detector at the higher frequencies where the number of detectors required is prohibitively large. We have found that the PFSB architecture requires the use of a square cross-section waveguide. A simulation we developed has illuminated the fact that the curved field lines of the higher order modes can be eliminated by degeneracies which exist only for a square guide and not a circular one. In the square guide configuration, the PFSBs show good band selection and polarization efficiency to a level of about 90% over the beam out to at least 20° from on-axis.

Design, Implementation, and Characterization of a Dedicated Breast Computed Mammo Tomography System for Enhanced Lesion Imaging

DTIC Science & Technology

2007-03-01

common FOV of each system. 64 SPECT System Our current emission tomography system uses a compact 16x20cm 2 field of view Cadmium Zinc Telluride (CZT...Brzymialkiewicz, M.P. Tornai, R.L. McKinley, J.E. Bowsher. “Evaluation of Fully 3D Emission Mammotomography with a Compact Cadmium Zinc Telluride Detector...conclusions. Stacks of breast tissue equivalent plates, each 2.0cm thick (CIRS Inc., Norfolk, VA) having either 100% glandular or 100% adipose composition

Methods for isolation and viability assessment of biological organisms

DOEpatents

Letant, Sonia Edith; Baker, Sarah Elyse; Bond, Tiziana; Chang, Allan Shih-Ping

2015-02-03

Isolation of biological or chemical organisms can be accomplished using a surface enhanced Raman scattering (SERS) system. The SERS system can be a single or a stacked plurality of photonic crystal membranes with noble-metal lined through pores for flowing analyte potentially containing the biological or chemical organisms. The through pores can be adapted to trap individual biological or chemical organisms and emit SERS spectra, which can then be detected by a detector and further analyzed for viability of the biological or chemical organism.

Parylene supported 20um*20um uncooled thermoelectric infrared detector with high fill factor

NASA Astrophysics Data System (ADS)

Modarres-Zadeh, Mohammad J.; Carpenter, Zachary S.; Rockley, Mark G.; Abdolvand, Reza

2012-06-01

Presented is a novel design for an uncooled surface-micromachined thermoelectric (TE) infrared (IR) detector. The detector features a P-doped polysilicon/Nichrome (Cr20-Ni80) thermocouple, which is embedded into a thin layer of Parylene-N to provide structural support. The low thermal conductivity (~0.1W/m.K), chemical resistance, and ease of deposition/patterning of Parylene-N make it an excellent choice of material for use in MEMS thermal detectors. This detector also features an umbrella-like IR absorber composed of a three layer stack of NiCr/SiN/NiCr to optimize IR absorption. The total device area is 20 um * 20 um per pixel with an absorber area of ~19 um * 19 um resulting in a fill factor of 90%. At room temperature, a DC responsivity of ~170V/W with a rise time of less than 8 ms is measured from the fabricated devices in vacuum when viewing a 500K blackbody without any concentrating optics. The dominant source of noise in thermoelectric IR detectors is typically Johnson noise when the detectors are operating in an open circuit condition. The fabricated detectors have resistances about 85KOhm which results in Johnson noise of about 38nV/Hz^0.5. The D* is calculated to be 9 * 106 cm*Hz0.5/ W. Preliminary finite element analysis indicates that the thermal conduction from the hot junction to the substrate through the TE wires is dominant ( GTE >> Gparylene) considering the fabricated dimensions of the parylene film and the TE wires. Thus, by further reducing the size of the TE wires, GTE can be decreased and hence, responsivity can be improved while the parylene film sustains the structural integrity of the cell.

Test of the Angle Detecting Inclined Sensor (ADIS) Technique for Measuring Space Radiation

NASA Astrophysics Data System (ADS)

Connell, J. J.; Lopate, C.; McLaughlin, K. R.

2009-12-01

In February 2008 we exposed an Angle Detecting Inclined Sensor (ADIS) prototype to beams of 150 MeV/u 78Kr and fragments at the National Superconducting Cyclotron Laboratory's (NSCL) Coupled Cyclotron Facility (CCF). ADIS is a highly innovative and uniquely simple detector configuration used to determine the angles of incidence of heavy ions in energetic charged particle instruments. Corrections for angle of incidence are required for good charge and mass separation. An ADIS instrument is under development to fly on the GOES-R series of weather satellites. The prototype tested consisted of three ADIS detectors, two of which were inclined at an angle to the telescope axis, forming the initial detectors in a five-detector telescope stack. By comparing the signals from the ADIS detectors, the angle of incidence may be determined and a pathlength correction applied to charge and mass determinations. Thus, ADIS replaces complex position sensing detectors with a system of simple, reliable and robust Si detectors. Accelerator data were taken at multiple angles to both primary and secondary beams with a spread of energies. This test instrument represents an improvement over the previous ADIS prototype in that it used oval inclined detectors and a much lower-mass support structure, thus reducing the number of events passing through dead material. These data show a charge peak resolution of 0.18 ± 0.01 e at Br (Z = 35), excellent for such a simple instrument. We will present the results of this test. The ADIS instrument development project was partially funded by NASA under the Living With a Star (LWS) Targeted Research and Technology program (grant NAG5-12493).

Trapezoidal diffraction grating beam splitters in single crystal diamond

NASA Astrophysics Data System (ADS)

Kiss, Marcell; Graziosi, Teodoro; Quack, Niels

2018-02-01

Single Crystal Diamond has been recognized as a prime material for optical components in high power applications due to low absorption and high thermal conductivity. However, diamond microstructuring remains challenging. Here, we report on the fabrication and characterization of optical diffraction gratings exhibiting a symmetric trapezoidal profile etched into a single crystal diamond substrate. The optimized grating geometry diffracts the transmitted optical power into precisely defined proportions, performing as an effective beam splitter. We fabricate our gratings in commercially available single crystal CVD diamond plates (2.6mm x 2.6mm x 0.3mm). Using a sputter deposited hard mask and patterning by contact lithography, the diamond is etched in an inductively coupled oxygen plasma with zero platen power. The etch process effectively reveals the characteristic {111} diamond crystal planes, creating a precisely defined angled (54.7°) profile. SEM and AFM measurements of the fabricated gratings evidence the trapezoidal shape with a pitch of 3.82μm, depth of 170 nm and duty cycle of 35.5%. Optical characterization is performed in transmission using a 650nm laser source perpendicular to the sample. The recorded transmitted optical power as function of detector rotation angle shows a distribution of 21.1% in the 0th order and 23.6% in each +/-1st order (16.1% reflected, 16.6% in higher orders). To our knowledge, this is the first demonstration of diffraction gratings with trapezoidal profile in single crystal diamond. The fabrication process will enable beam splitter gratings of custom defined optical power distribution profiles, while antireflection coatings can increase the efficiency.

Development of a framework of quality assurance practices for a radon passive dosemeter service.

PubMed

D'Alessandro, M; Leonardi, F; Tonnarini, S; Trevisi, R; Veschetti, M

2010-06-01

Etched track detectors are widely used for the detection of radon and its decay products. The reliability of radon measurement performed with such devices requires that laboratories producing analytical data are able to provide results of the required quality. The need for uniform results from laboratories at an international level therefore requires the implementation of a quality assurance programme, the harmonization of criteria, sampling procedures, calculations and the reporting of results, agreed on the basis of fundamental principles and international standards. The quality assurance programme described here is the first step on the way to ISO/IEC 17025 certification for the RI-RN (ISPESL) laboratory.